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Sample records for hydrogen plasma etching

  1. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    SciTech Connect

    Hansen, T. A. R.; Weber, J. W.; Colsters, P. G. J.; Mestrom, D. M. H. G.; Sanden, M. C. M. van de; Engeln, R.

    2012-07-01

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  2. The effect of hydrogen-based, high density plasma etching on the electronic properties of gallium nitride

    SciTech Connect

    Eddy, C.R. Jr.; Molnar, B.

    1996-11-01

    Development of devices based on the wide gap semiconductor gallium nitride (GaN) requires the realization of reliable, high fidelity, low damage pattern transfer processes. In this work, GaN thin films grown by OMVPE have been subjected to both chlorine- and methane/hydrogen-based etch chemistries in an electron cyclotron resonance microwave plasma reactive ion etching system. Both n-type and semi-insulating thin films have been utilized to examine the effect of these etch processes on the electronic properties of the materials. The methane/hydrogen-based etch system (CH{sub 4}/H{sub 2}/Ar) induced considerable changes in the electrical properties of both n-type and semi-insulating films, causing the former to become more insulating and the latter to become conducting. In both cases, the original electrical properties were recoverable after a short, high temperature anneal. In the chlorine-based etching system (Cl{sub 2}), no changes in the electrical properties were observed and etch rates five times greater than in the methane/hydrogen-based system were achieved. Proposed mechanism responsible for the observed behavior will be discussed. These results show that pattern transfer processes based in chlorine etch chemistries are more suitable for the generation of high performance GaN devices.

  3. Metal-containing fluoropolymer films produced by simultaneous plasma etching and polymerization: Effects of hydrogen or oxygen

    NASA Astrophysics Data System (ADS)

    Kay, E.; Dilks, A.; Seybold, D.

    1980-11-01

    The formation of metal-containing fluoropolymer films by simultaneous plasma etching and polymerization in a radiofrequency diode reactor configuration is investigated as a function of additive scavenger gases. The addition of oxygen to plasmas excited in tetrafluoroethylene or perfluoropropane is found to enhance the etching rate at the excitation metal electrode and diminish the polymer film deposition rate at the grounded electrode. The overall effect is to increase the metal content of the films. The addition of hydrogen to plasmas excited in tetrafluoromethane or perfluoropropane has the opposite effect. X-ray photoelectron spectroscopy is employed to determine the composition and structure of the films, and this coupled with mass spectrometric analysis of the plasma gas phase chemistry has allowed the identification of the likely precursors to plasma polymerization for the systems studied.

  4. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

    SciTech Connect

    Hadjadj, Aomar Larbi, Fadila; Gilliot, Mickaël; Roca i Cabarrocas, Pere

    2014-08-28

    When atomic hydrogen interacts with hydrogenated amorphous silicon (a-Si:H), the induced modifications are of crucial importance during a-Si:H based devices manufacturing or processing. In the case of hydrogen plasma, the depth of the modified zone depends not only on the plasma processing parameters but also on the material. In this work, we exposed a-Si:H thin films to H{sub 2} plasma just after their deposition. In situ UV-visible spectroscopic ellipsometry measurements were performed to track the H-induced changes in the material. The competition between hydrogen insertion and silicon etching leads to first order kinetics in the time-evolution of the thickness of the H-modified zone. We analyzed the correlation between the steady state structural parameters of the H-modified layer and the main levers that control the plasma-surface interaction. In comparison with a simple doped layer, exposure of a-Si:H based junctions to the same plasma treatment leads to a thinner H-rich subsurface layer, suggesting a possible charged state of hydrogen diffusing.

  5. Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Funaki, Takeshi; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2016-01-01

    The silicon (Si) etching characteristics and the related efficiency of the etched Si to generate SiH4 gas in narrow-gap high-pressure microwave H2 plasma have been investigated. It was found that cooling of the Si sample is effective to obtain a high etching rate even under high pressure conditions, and the excess temperature increase of both the gas and Si sample can be suppressed even at an input power density of more than 250 W cm-3, probably because of the narrow plasma gap. The local etching depth monotonically increased with increasing H2 pressure and input plasma power, whereas the etching weight decreased with increasing H2 pressure. By simultaneously increasing the H2 pressure and input power, a maximum Si etching rate of 38 μm min-1 was achieved. This is considered to be related to the high H density generated in the narrow-gap microwave plasma at relatively low temperatures. The energy efficiency of Si etching and the utilization efficiency of the etched Si and H2 gas for SiH4 formation are discussed. Lower input power is favorable for high energy efficiency of Si etching. The Si utilization efficiency, which is defined as the molar ratio of generated SiH4 to etched Si, increases with decreasing average gas residence time in the plasma, whereas H2 utilization efficiency is independent of the gas residence time.

  6. Plasma Etching Improves Solar Cells

    NASA Technical Reports Server (NTRS)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  7. Dilute hydrogen plasma cleaning of boron from silicon after etching of HfO{sub 2} films in BCl{sub 3} plasmas: Substrate temperature dependence

    SciTech Connect

    Wang Chunyu; Donnelly, Vincent M.

    2009-01-15

    The authors have investigated the effects of elevated substrate temperature (T{sub s}) on cleaning of boron residues from silicon substrates in 1%H{sub 2}-Ar plasmas, following etching of HfO{sub 2} in BCl{sub 3} plasmas. Vacuum-transfer x-ray photoelectron spectroscopy (XPS) provided a measure of total B removal rates, as well as information on individual BCl{sub x}O{sub y} moities. B cleaning rates increased with T{sub s} in an Arrhenius manner, with an apparent activation energy of 1.7 kcal/mol. Conversely, the Si etching rate decreased with increasing substrate temperature with an apparent activation energy of -0.8 kcal/mol. Therefore, when considering selectivity with respect to Si etching, it is advantageous to remove B at higher T{sub s}. For example, at T{sub s}=235 deg. C, {approx}90% of B is cleaned from Si in 10 s, while <1.5 nm of Si is removed. An apparent diffusion of H into the near-surface region of Si at higher temperatures, detected indirectly by a shift and broadening of the Si(2p) XPS peak, may limit the maximum optimum substrate temperature, however. It was also found that Si does not etch in 1%H{sub 2}/Ar plasmas if an oxide layer is present.

  8. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  9. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  10. Plasma etching in a multipolar discharge

    NASA Astrophysics Data System (ADS)

    Wicker, T. E.; Mantei, T. D.

    1985-03-01

    Etching of silicon and SiO2 has been investigated in a dc plasma discharge confined by a multipolar surface magnetic field layer. The reactive plasma is produced by primary ionizing electrons drawn from heated tungsten filaments and confined by permanent magnets. Electrical probe measurements show that a uniform high-density plasma (1010-1011 cm-3) is sustained in SF6-O2 at very low pressure (0.2-2.0×10-3 Torr). Substrates are biased independently of plasma production by a low-frequency alternating voltage (0-400 V) applied to the substrate through a blocking capacitor. Anisotropic profiles are etched into Si in SF6-20% O2 with etch rates in excess of 1 μm/min at 2×10-3 Torr. The etch rate increases with increasing primary electron current (up to 3 A) and energy (up to 60 eV), gas pressure (up to 2.0×10-3 Torr), substrate bias voltage, and the addition of up to 20% O2. For higher ionizing electron energies (>60 eV) and higher gas pressure (>2.0×10-3 Torr), etching is partially blocked by residue formation. The etch anisotropy depends mainly on substrate bias, increasing for higher values of bias voltage. The Si:SiO2 etch selectivity is typically 10-20, becoming large with decreasing substrate bias and plasma ion density.

  11. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  12. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  13. Etching with electron beam generated plasmas

    SciTech Connect

    Leonhardt, D.; Walton, S.G.; Muratore, C.; Fernsler, R.F.; Meger, R.A.

    2004-11-01

    A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen-argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride ({approx}200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride (SiO{sub x}F{sub y}) compounds. At low incident ion energies, the Ar-SF{sub 6} mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at {approx}75 eV. Etch rates were independent of the 0.5%-50% duty factors studied in this work.

  14. Thermal compression chip interconnection using organic solderability preservative etched substrate by plasma processing.

    PubMed

    Cho, Sung-Won; Choi, JoonYoung; Chung, Chin-Wook

    2014-12-01

    The solderability of copper organic solderbility preservative (CuOSP) finished substrate was enhanced by the plasma etching. To improve the solderability of TC interconnection with the CuOSP finished substrate, the plasma etching process is used. An Oxygen-Hydrogen plasma treatment process is performed to remove OSP material. To prevent the oxidation by oxygen plasma treatment, hydrogen reducing process is also performed before TC interconnection process. The thickness of OSP material after plasma etching is measured by optical reflection method and the component analysis by Auger Electron Spectroscopy is performed. From the lowered thickness, the bonding force of TC interconnection after OSP etching process is lowered. Also the electrical open/short test was performed after assembling the completed semiconductor packaging. The improved yield due to the plasma etching process is achieved.

  15. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  16. Shapes of agglomerates in plasma etching reactors

    SciTech Connect

    Huang, F.Y.; Kushner, M.J.

    1997-05-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller ({lt}100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. {copyright} {ital 1997 American Institute of Physics.}

  17. Spent nuclear fuel recycling with plasma reduction and etching

    SciTech Connect

    Kim, Yong Ho

    2012-06-05

    A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF6 and PuF4. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF6 (gas) that is formed to decompose back to PuF4 (solid), and b) to maintain stability of the UF6. Uranium (in the form of gaseous UF6) is easily extracted and separated from the plutonium (in the form of solid PuF4). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF6 (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF4 or NF3 as the fluorine sources instead of F2 or HF.

  18. Analytical model of plasma-chemical etching in planar reactor

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  19. Plasma etching of the Group-III nitrides

    SciTech Connect

    Shul, R.; Pearton, S.J.; Abernathy, C.R.

    1996-01-01

    In reactive ion etching (RIE) of GaN, the ion bombardment can damage the material, so it is necessary to develop plasma etch processes. This paper reports etching of GaN in an ECR (electron cyclotron resonance) etch system using both the ECR/RIE mode and the RIE-only mode. Group III (Ga, In, Al) nitride ECR etching is reviewed as a function of plasma chemistry, power, temperature, and pressure; as the ECR microwave power increased, the ion density and etch rates increased, with the etch rate increasing the most for InN. GaN etch rates > 6500 {angstrom}/min have been observed in the ECR/RIE mode. 2 figs, 6 refs.

  20. Etch Characteristics of GaN using Inductively Coupled Cl{sub 2} Plasma Etching

    SciTech Connect

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-20

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl{sub 2}/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl{sub 2}/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 A/min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  1. Plasma etching, texturing, and passivation of silicon solar cells

    SciTech Connect

    Ruby, D.S.; Yang, P.; Zaidi, S.; Brueck, S.; Roy, M.; Narayanan, S.

    1998-11-01

    The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. The authors used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. They also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.

  2. Atomic precision etch using a low-electron temperature plasma

    NASA Astrophysics Data System (ADS)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2016-03-01

    Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (< 3 eV without applied bias) compared to conventional radio-frequency (RF) plasma technologies. Electron beam plasmas are characterized by higher ion-to-radical fraction compared to RF plasmas, so a separate radical source is used to provide accurate control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

  3. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  4. Reactive sputter etching of magnetic materials in an HCl plasma

    SciTech Connect

    Heijman, M.G.J.

    1988-12-01

    In an rf low-pressure HCl plasma NiZn and MnZn ferrite etch up to five times as fast as in an otherwise comparable Ar sputter etch process. Selectivity towards Al/sub 2/O/sub 3/ as an etch mask is of order 10. No redeposited material and very little trenching are seen. The etched slopes have a steepness up to 70/sup 0/, resulting from redeposition and enhanced etching on the sidewalls. This is shown by experiments and by computer simulations.

  5. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma

    SciTech Connect

    Hareland, W.A.; Buss, R.J.

    1993-06-01

    Nonuniform etching is a serious problem in plasma processing of semiconductor materials and has important consequences in the quality and yield of microelectronic components. In many plasmas, etching occurs at a faster rate near the periphery of the wafer, resulting in nonuniform removal of specific materials over the wafer surface. This research was to investigate in situ optical diagnostic techniques for monitoring etch uniformity during plasma processing of microelectronic components. We measured 2-D images of atomic chlorine at 726 nm in a chlorine-helium plasma during plasma etching of polysilicon in a parallel-plate plasma etching reactor. The 3-D distribution of atomic chlorine was determined by Abel inversion of the plasma image. The experimental results showed that the chlorine atomic emission intensity is at a maximum near the outer radius of the plasma and decreases toward the center. Likewise, the actual etch rate, as determined by profilometry on the processed wafer, was approximately 20% greater near the edge of the wafer than at its center. There was a direct correlation between the atomic chlorine emission intensity and the etch rate of polysilicon over the wafer surface. Based on these analyses, 3-D imaging would be a useful diagnostic technique for in situ monitoring of etch uniformity on wafers.

  6. Hydrogen Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching

    SciTech Connect

    Saraf, Laxmikant V.; Baer, Donald R.; Wang, Zheming; Young, James S.; Engelhard, Mark H.; Thevuthasan, Suntharampillai

    2005-06-01

    Many nanoporous Si structures, including those formed by common electrochemical etching procedures, produce a uniformly etch nanoporous surface. If the electrochemical etch rate is slowed down, details of the etch process can be explored and process parameters may be varied to test hypotheses and obtain controlled nanoporous and defect structures. For example, after electrochemical etching of a heavily n-doped (R = 0.05-0.5 ? -cm) <100> silicon at a current density of 10 mA/cm? in buffer oxide etch (BOE) electrolyte solution defect craters, containing textured nanopores, were observed to occur in ring shaped patterns of rings. The defect craters apparently originate at the hydrogen-BOE bubble interface, which forms during hydrogen evolution in the reaction. The slower hydrogen evolution due to low current density allows sufficient bubble residence time so that a high defect density appears at the bubble edges where local reaction rates are highest. Current carrying Si-OH species are most likely responsible for the widening in the craters. Reducing the defect/doping density in silicon lowers the defect concentration and thereby the density of nanopores. Measurements of photoluminescence lifetime and intensity show a distinct feature when the low density of nanopores formed at ring edges are isolated from each other. Overall features observed in photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) intensity strongly emphasize the role of surface oxide that influences these properties.

  7. Etching of photoresist with an atmospheric pressure plasma jet

    NASA Astrophysics Data System (ADS)

    West, Andrew; van der Schans, Marc; Xu, Cigang; Gans, Timo; Cooke, Mike; Wagenaars, Erik

    2014-10-01

    Low-pressure oxygen plasmas are commonly used in semiconductor industry for removing photoresist from the surface of processed wafers; a process known as plasma ashing or plasma stripping. The possible use of atmospheric-pressure plasmas instead of low-pressure ones for plasma ashing is attractive from the point of view of reduction in equipment costs and processing time. We present investigations of photoresist etching with an atmospheric-pressure plasma jet (APPJ) in helium gas with oxygen admixtures driven by radio-frequency power. In these experiments, the neutral, radical rich effluent of the APPJ is used for etching, avoiding direct contact between the active plasma and the sensitive wafer, while maintaining a high etch rate. Photoresist etch rates and etch quality are measured for a range of plasma operating parameters such as power input, driving frequency, flow rate and wafer temperature. Etch rates of up to 10 micron/min were achieved with modest input power (45 W) and gas flow rate (10 slm). Fourier Transform Infrared (FTIR) spectroscopy showed that the quality of the photoresist removal was comparable to traditional plasma ashing techniques. This work was supported by the UK Engineering and Physical Sciences Research Council Grant EP/K018388/1.

  8. Rapid recipe formulation for plasma etching of new materials

    NASA Astrophysics Data System (ADS)

    Chopra, Meghali; Zhang, Zizhuo; Ekerdt, John; Bonnecaze, Roger T.

    2016-03-01

    A fast and inexpensive scheme for etch rate prediction using flexible continuum models and Bayesian statistics is demonstrated. Bulk etch rates of MgO are predicted using a steady-state model with volume-averaged plasma parameters and classical Langmuir surface kinetics. Plasma particle and surface kinetics are modeled within a global plasma framework using single component Metropolis Hastings methods and limited data. The accuracy of these predictions is evaluated with synthetic and experimental etch rate data for magnesium oxide in an ICP-RIE system. This approach is compared and superior to factorial models generated from JMP, a software package frequently employed for recipe creation and optimization.

  9. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    SciTech Connect

    Nakazaki, Nobuya Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i} < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher E{sub i}, where the rms surface roughness decreases substantially with E{sub i} down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on E{sub i} were also observed in the etch rate versus √(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  10. Etching of silicon surfaces using atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Paetzelt, H.; Böhm, G.; Arnold, Th

    2015-04-01

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min-1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets.

  11. Automated process control for plasma etching

    NASA Astrophysics Data System (ADS)

    McGeown, Margaret; Arshak, Khalil I.; Murphy, Eamonn

    1992-06-01

    This paper discusses the development and implementation of a rule-based system which assists in providing automated process control for plasma etching. The heart of the system is to establish a correspondence between a particular data pattern -- sensor or data signals -- and one or more modes of failure, i.e., a data-driven monitoring approach. The objective of this rule based system, PLETCHSY, is to create a program combining statistical process control (SPC) and fault diagnosis to help control a manufacturing process which varies over time. This can be achieved by building a process control system (PCS) with the following characteristics. A facility to monitor the performance of the process by obtaining and analyzing the data relating to the appropriate process variables. Process sensor/status signals are input into an SPC module. If trends are present, the SPC module outputs the last seven control points, a pattern which is represented by either regression or scoring. The pattern is passed to the rule-based module. When the rule-based system recognizes a pattern, it starts the diagnostic process using the pattern. If the process is considered to be going out of control, advice is provided about actions which should be taken to bring the process back into control.

  12. Recouping etch rates in pulsed inductively coupled plasmas

    SciTech Connect

    Agarwal, Ankur; Stout, Phillip J.; Banna, Samer; Rauf, Shahid; Collins, Ken

    2011-01-15

    Pulsed rf plasmas are increasingly being employed for plasma etching at future technological nodes. Although the plasma uniformity usually improves with pulsing, the lower time-averaged power decreases the etch rate and the lower throughput is undesirable. It is therefore important to evaluate different strategies to restore higher etch rates while retaining the advantages of pulsed plasmas. In this work, the impact of varying pulsing modes in an inductively coupled plasma on plasma characteristics and feature profile evolution are discussed using the results from a two-dimensional reactor scale plasma model coupled to a Monte Carlo based feature profile model. Results are discussed for poly-Si etching in an Ar/Cl{sub 2} gas mixture. The consequences of source-only and bias-only pulsing modes on discharge characteristics, ion energy distributions (IEDs) to the wafer, and feature profile evolution are discussed. Although the etch depth rates were found to be higher for source-only pulsing compared to the synchronized (source and bias) pulsing mode, the higher ion energies in the afterglow period during source-only pulsing may also increase ion bombardment damage. Compensation of power may allow for increased etch depth rates while retaining the benefits of synchronized pulsing. Further, power compensation level can be varied to achieve fine tuning of the IEDs to the wafer.

  13. ECR, ICP, and RIE plasma etching of GaN

    SciTech Connect

    Shul, R.J.; McClellan, G.B.; Rieger, D.J.; Hafich, M.J.

    1996-06-01

    The group III-nitrides continue to generate interest due to their wide band gaps and high dielectric constants. These materials have made significant impact on the compound semiconductor community as blue and ultraviolet light emitting diodes (LEDs). Realization of more advanced devices; including lasers and high temperature electronics, requires dry etch processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {mu}m/min. In this paper, we compare electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) etch results for GaN. These are the first ICP etch results reported for GaN. We also report ECR etch rates for GaN as a function of growth technique.

  14. Physical mechanisms for anisotropic plasma etching of cesium iodide

    SciTech Connect

    Yang Xiaoji; Hopwood, Jeffrey A.

    2004-11-01

    The physical mechanisms for the interaction between a reactive plasma and a cesium iodide surface are investigated. Under conditions of ion bombardment and elevated substrate temperature, CsI is found to sputter etch slowly (15 nm/min). If atomic fluorine, fluorocarbon radicals, of SF{sub x} radicals are present in the discharge, however, CsI is reactively etched at substantially higher rates (up to 200 nm/min). The roles of plasma radicals and energetic ion bombardment are investigated by first exposing the surface to plasma radicals and then bombarding the surface with argon ions. The optical emission from Cs and I atoms is found to correlate with the etch rate of CsI and is used as an in situ monitor of radical-enhanced etching. Small surface exposures to CF{sub x}, SF{sub x}, and F radicals are shown to enhance the etch rate of CsI. If the exposure of the CsI surface is increased, however, these same radical species act as etch inhibitors. A simple model for reactive etching of CsI is proposed, and this model is shown to compare reasonably well with experimental etch rates.

  15. Effects of plasma etching solar cell front surfaces

    SciTech Connect

    Taylor, W.E.; Bunyan, S.M.; Olson, C.E.

    1980-01-01

    A front surface plasma etch with Freon 14+8% O/sub 2/ or sulfur hexafluoride (SF/sub 6/) was found to improve terrestrial solar cell output. SEM studies of these samples revealed surface pitting on Freon 14 etched samples. About 50% of the improvement from Freon etched samples can be attributed to the light capturing effects of surface pits. Output increases from SF/sub 6/ plasma etched cells were found to be comparable with Freon etched cells after subtraction of the light trapping effects. The excess output improvement might be attributed to reduced junction depth or removal of near surface lattice damage. Investigations attempting to identify the cause are described. 1 ref.

  16. Chlorine-based plasma etching of GaN

    SciTech Connect

    Shul, R.J.; Briggs, R.D.; Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R.; Lee, J.W.; Constantine, C.; Baratt, C.

    1997-02-01

    The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.

  17. Plasma & reactive ion etching to prepare ohmic contacts

    DOEpatents

    Gessert, Timothy A.

    2002-01-01

    A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

  18. Plasma etching of polymers like SU8 and BCB

    NASA Astrophysics Data System (ADS)

    Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

    2003-01-01

    Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

  19. CH4/Ar/H2/SF6 Plasma Etching for Surface Oxide Removal of Indium Bumps

    NASA Astrophysics Data System (ADS)

    Huang, Yue; Lin, Chun; Ye, Zhen-Hua; Liao, Qing-Jun; Ding, Rui-Jun

    2015-07-01

    Plasma etching for surface indium oxide removal by methane/argon/hydrogen/sulfur hexafluoride (CH4/Ar/H2/SF6) mixture has been implemented. The morphology of the indium bumps was not deteriorated after the plasma etching. High-resolution O 1 s x-ray photoelectron spectroscopy (XPS) proved that the In-O component decreased from 44.5% for the nonetched sample to 10.8% for the sample after plasma etching. The surface modification of the indium bumps might be in the form of doped fluorine according to the XPS results. The zero-bias resistance derived from current-voltage ( I- V) measurements for plasma-etched infrared detectors was comparable to that for nonetched ones, indicating that such plasma treatment is suitable for processing sensitive materials such as mercury cadmium telluride.

  20. Etching of oxynitride thin films using inductively coupled plasma

    SciTech Connect

    Kim, Byungwhan; Lee, Dukwoo; Kim, Nam Jung; Lee, Byung Teak

    2005-05-01

    In this study, silicon oxynitride (SiON) has been etched in a C{sub 2}F{sub 6} inductively coupled plasma. The process parameters examined include a radio frequency source power, bias power, pressure, and C{sub 2}F{sub 6} flow rate. For process optimization, a statistical experimental design was employed to investigate parameter effects under various plasma conditions. The etch rate increased almost linearly with increasing the source or bias power. Main effect analysis revealed that the etch rate is dominated by the source power. The C{sub 2}F{sub 6} flow rate exerted the least impact on both etch rate and profile angle. It was estimated that the C{sub 2}F{sub 6} effect is transparent only as the etchant is supplied sufficiently. Depending on the pressure levels, the etch rate varied in a complicated way. Parameter effects on the profile angle were very small and the profile angle varied between 83 deg. and 87 deg. for all etching experiments. In nearly all experiments, microtrenching was observed. The etch rate and profile angle, optimized at 1000 W source power, 30 W bias power, 6 mTorr pressure, and 60 sccm C{sub 2}F{sub 6} flow rate, are 434 nm/min and 86 deg., respectively.

  1. Feedback control of chlorine inductively coupled plasma etch processing

    SciTech Connect

    Lin Chaung; Leou, K.-C.; Shiao, K.-M.

    2005-03-01

    Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2{sup 2} factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained.

  2. The grand challenges of plasma etching: a manufacturing perspective

    NASA Astrophysics Data System (ADS)

    Lee, Chris G. N.; Kanarik, Keren J.; Gottscho, Richard A.

    2014-07-01

    Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the mid 80s to ˜0.01 µm today. The manufacturing of these devices requires overcoming a series of challenges, ranging from continuous innovation on device integration to extend Moore's law to breaking tradeoffs on the perennial challenge of aspect ratio-dependent etching. In this paper, we will review four key areas in etch manufacturing: uniformity, defects, surface precision and ‘sticky’/non-volatile etch materials. In the uniformity section, we will discuss the challenges for microscopic uniformity, such as localized feature dimension variations; macroscopic uniformity, such as performance at the extreme edge of the wafer; and repeatable uniformity, meaning wafer-to-wafer, lot-to-lot and chamber-to-chamber performance. While defect management is successful with in situ plasma cleans, one must be cognizant of the choice of clean chemistry. In surface precision, we look at the approach of atomic layer etching and how it can be successful in a manufacturing environment. Finally, in the non-volatile material section, we review technology drivers for DRAM (dynamic random access memory) and NAND flash memory in the microelectronics Si industry, with focus on the utilization of such materials and what it means to etch equipment manufacturers.

  3. Modeling aluminum etch chemistry in high density plasmas

    SciTech Connect

    Meeks, E.; Ho, P.; Buss, R.

    1997-08-01

    The authors have assembled a chemical reaction mechanism that describes the BCl{sub 3}/Cl{sub 2}/Ar plasma etch of Al metallization layers. The reaction set for gas-phase and surface processes was derived either from literature data or estimated from data on related systems. A well-mixed reactor model was used to develop the mechanism and test it against experimental measurements of plasma species and etch-rates in processing reactors. Finally, use of reduced chemistry mechanisms are demonstrated in 2-D simulations for a complex reactor geometry.

  4. Origin of electrical signals for plasma etching endpoint detection

    SciTech Connect

    Sobolewski, Mark A.

    2011-11-14

    Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be caused by changes in the gas-phase densities of etch products and reactants or by changes in substrate surface properties such as photoemitted or ion-induced electron yield. To investigate these effects, experiments were performed in an inductively coupled, rf-biased reactor, during CF{sub 4}/Ar etches of SiO{sub 2} films on Si wafers. The rf bias impedance was measured vs. time during etching, simultaneous with Langmuir probe measurements. At endpoint, a decrease in impedance coincided with increases in ion current and electron energy. The data, analyzed by a numerical model of the discharge, indicate that changes in electron emission yield were relatively insignificant or entirely absent. Thus the impedance change is not a surface effect but is, instead, predominantly or entirely a gas-phase phenomenon.

  5. Reactive ion etching of silicon using low-power plasma etcher

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.

    2016-09-01

    The paper is devoted to the study of deep reactive ion etching of silicon using diode plasma etcher system with a low-power source. Silicon wafers were etched in a sulfur hexafluoride plasma and sulfur hexafluoride/oxygen plasma. The maximum achieved silicon etch rate was about 2 μm/min. The expediency of using dry reactive ion etching in combination with wet anisotropic etching of silicon for manufacturing of microelectromechanical systems (MEMS) was demonstrated.

  6. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  7. Plasma chemistry dependent ECR etching of GaN

    SciTech Connect

    Shul, R.J.; Ashby, C.I.H.; Rieger, D.J.

    1995-12-31

    Electron cyclotron resonance (ECR) etching of GaN in Cl{sub 2}/H{sub 2}/Ar, C1{sub 2}/SF{sub 6}/Ar, BCl{sub 3}/H{sub 2}/Ar and BCl{sub 3}/SF{sub 6}/Ar plasmas is reported as a function of percent H{sub 2} and SF{sub 6}. GaN etch rates were found to be 2 to 3 times greater in Cl{sub 2}/H{sub 2}/Ar discharges than in BCl{sub 3}/H{sub 2}/Ar discharges independent of the H{sub 2} concentration. In both discharges, the etch rates decreased as the H{sub 2} concentration increased above 10%. When SF{sub 6} was substituted for H{sub 2}, the GaN etch rates in BCl{sub 3}-based plasmas were greater than those for the Cl{sub 2}-based discharges as the SF{sub 6} concentration increased. GaN etch rates were greater in Cl{sub 2}/H{sub 2}/Ar discharges as compared to Cl{sub 2}SF{sub 6}/Ar discharges whereas the opposite trend was observed for BCl{sub 3}-based discharges. Variations in surface morphology and near-surface stoichiometry due to plasma chemistries were also investigated using atomic force microscopy and Auger spectroscopy, respectively.

  8. Diamond growth on Fe-Cr-Al alloy by H2-plasma enhanced graphite etching

    NASA Astrophysics Data System (ADS)

    Li, Y. S.; Hirose, A.

    2007-04-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370to740°C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface.

  9. Fabrication of Glassy Carbon Molds Using Hydrogen Silsequioxane Patterned by Electron Beam Lithography as O2 Dry Etching Mask

    NASA Astrophysics Data System (ADS)

    Yasui, Manabu; Sugiyama, Yoshinari; Takahashi, Masaharu; Kaneko, Satoru; Uegaki, Jun-ichi; Hirabayashi, Yasuo; Sugimoto, Koh-ichi; Maeda, Ryutaro

    2008-06-01

    Glass is a good candidate material for optical devices because of its enhanced optical properties, the technique of die machining has not been established for the hot embossing of glass. In this study, we used the glassy carbon (GC) mold for the hot embossing of glass. An inductively coupled plasma reactive ion etching (ICP-RIE) using oxygen plasma was employed for the submicron structuring of the GC mold. Hydrogen silsesquioxane (HSQ) is a negative-type electron beam (EB) resist used to be resistant to oxygen plasma. HSQ patterns drawn by electron beam lithography (EBL) were used as the O2 dry etching mask. The etching selectivity between HSQ and GC was 35. The average of the extent of side etching was 40 nm at a depth of 300 nm. The side etching functioning as the draft angle was caused mainly by oxygen radicals, because HSQ patterns remained even after GC patterns were side-etched. We confirmed that the GC mold fabricated by O2 dry etching can be used for glass hot embossing. Since the mold lubricant was not rubbed on the mold surface, GC is the appropriate mold material for Pyrex glass.

  10. Method of plasma etching Ga-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  11. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  12. Investigation of plasma etch induced damage in compound semiconductor devices

    SciTech Connect

    Shul, R.J.; Lovejoy, M.L.; Hetherington, D.L.; Rieger, D.J.; Vawter, G.A.; Klem, J.F.; Melloch, M.R.

    1993-11-01

    We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching. A variety of plasma chemistries (SiCl{sub 4}, BCl{sub 3}, BCl{sub 3}/Cl{sub 2}, and Cl{sub 2}) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the RIE BCl{sub 3}/Cl{sub 2} plasmas and RIBE Cl{sub 2} plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

  13. Surface Modification of Polymer Photoresists in Fluorocarbon Plasma Etching

    NASA Astrophysics Data System (ADS)

    Wang, Mingmei; Kushner, Mark

    2009-10-01

    In plasma etching of high aspect ratio (AR), nm sized features, erosion of polymer photoresist (PR) can perturb the feature profile (e.g., bowing). Although cross-linking of PR due to ion and VUV fluxes could make it more resistive to etching, typically the PR etch rate is too high to maintain the pattern when the AR is large (> 20). In dielectric plasma etching using fluorocarbon gases, one strategy to prevent PR erosion is to deposit a (CxFy)n polymer on its surface. This process may be enhanced in dc-augmented capacitively coupled plasmas (CCPs) by sputtering of Si and CxFy from the dc biased electrode. Dangling bonds generated on the PR surface by ion, photon or electron bombardment trap Si and CxFy radicals forming Si-C and C-C bonds. Sputtered Si atoms can also react with CxFy radicals to produce more reactive CxFy-1 radicals which are more easily incorporated into the PR. In this talk we discuss scaling laws for radical production derived from a computational investigation of a dc-augmented dual frequency CCP reactor sustained in Ar/C4F8/O2. Fluxes of Si radicals are produced by sputtering of the dc electrode. Rates of polymer deposition on and sputtering of PR, and consequences of PR erosion (and deposition) on feature profiles will be discussed.

  14. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    NASA Astrophysics Data System (ADS)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  15. Characterization of Plasma Generated in a Commercial Grade Plasma Etching system

    NASA Astrophysics Data System (ADS)

    Bessinger, Gabriella; Drake, Dereth; Popovic, Svetozar; Vuskovic, Leposava

    2014-10-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academicians use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  16. Etching characteristics of LiNbO{sub 3} in reactive ion etching and inductively coupled plasma

    SciTech Connect

    Ren, Z.; Yu, S.; Heard, P. J.; Marshall, J. M.; Thomas, P. A.

    2008-02-01

    The etching characteristics of congruent LiNbO{sub 3} single crystals including doped LiNbO{sub 3} and proton-changed LiNbO{sub 3} have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO{sub 3} have been fabricated and optically measured.

  17. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    SciTech Connect

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-07

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.

  18. Ion orbits in plasma etching of semiconductors

    SciTech Connect

    Madziwa-Nussinov, Tsitsi G.; Arnush, Donald; Chen, Francis F.

    2008-01-15

    Fabrication of high-speed semiconductor circuits depends on etching submicron trenches and holes with straight walls, guided by sheath accelerated ions, which strike the substrate at a normal angle. Electrons accumulate at the nonconductive entrance of each trench, charging it negatively and preventing the penetration of electrons to the bottom of the trench. This 'electron shading' effect causes an ion charge at the bottom, which is well known to cause damage to thin oxide layers. In addition, the deflection of ions by electric fields in the trench can cause deformation of the trench shape. To study this effect, the ion orbits are computed self-consistently with their charging of the trench walls. It is found that (a) the orbits depend only on the electric fields at the entrance and are sensitive to changes in the shape of the photoresist layer there; (b) there is an 'ion shading' effect that protects part of the wall; and (c) the number of ions striking the wall is too small to cause any deformation thereof.

  19. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    PubMed

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  20. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    NASA Astrophysics Data System (ADS)

    Ji, Jing; Tay, Francis E. H.; Miao, Jianmin; Sun, Jianbo

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  1. Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

    SciTech Connect

    King, Sean W. Davis, Robert F.; Carter, Richard J.; Schneider, Thomas P.; Nemanich, Robert J.

    2015-09-15

    The desorption kinetics of molecular hydrogen (H{sub 2}) from silicon (001) surfaces exposed to aqueous hydrogen fluoride and remote hydrogen plasmas were examined using temperature programmed desorption. Multiple H{sub 2} desorption states were observed and attributed to surface monohydride (SiH), di/trihydride (SiH{sub 2/3}), and hydroxide (SiOH) species, subsurface hydrogen trapped at defects, and hydrogen evolved during the desorption of surface oxides. The observed surface hydride species were dependent on the surface temperature during hydrogen plasma exposure with mono, di, and trihydride species being observed after low temperature exposure (150 °C), while predominantly monohydride species were observed after higher temperature exposure (450 °C). The ratio of surface versus subsurface H{sub 2} desorption was also found to be dependent on the substrate temperature with 150 °C remote hydrogen plasma exposure generally leading to more H{sub 2} evolved from subsurface states and 450 °C exposure leading to more H{sub 2} desorption from surface SiH{sub x} species. Additional surface desorption states were observed, which were attributed to H{sub 2} desorption from Si (111) facets formed as a result of surface etching by the remote hydrogen plasma or aqueous hydrogen fluoride treatment. The kinetics of surface H{sub 2} desorption were found to be in excellent agreement with prior investigations of silicon surfaces exposed to thermally generated atomic hydrogen.

  2. GaN etching in BCl{sub 3}Cl{sub 2} plasmas

    SciTech Connect

    Shul, R.J.; Ashby, C.I.H.; Willison, C.G.; Zhang, L.; Han, J.; Bridges, M.M.; Pearton, S.J.; Lee, J.W.; Lester, L.F.

    1998-04-01

    GaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaCl{sub 3} and NCl etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, the authors report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl{sub 3}:Cl{sub 2} flow ratio, dc-bias, chamber-pressure, and ICP source power. GaN etch rates ranging from {approximately}100 {angstrom}/min to > 8,000 {angstrom}/min were obtained with smooth etch morphology and anisotropic profiles.

  3. Plasma-etched nanostructures for optical applications (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  4. Dry etching of SiC using Ar/F2 plasma and XeF2 plasma

    NASA Astrophysics Data System (ADS)

    Matsutani, Akihiro; Koyama, Fumio

    2015-06-01

    We investigated the SiC dry etching process using Ar/F2 plasma and XeF2 plasma. We carried out optical observation of Ar/F2 plasma and XeF2 plasma. The dominant etching species were different between Ar/F2 plasma and XeF2 plasma. The etching rates of SiC were approximately 100 nm/min at 25 sccm and 200 W for Ar/F2 plasma and 45 nm/min at 2.5 sccm and 100 W for XeF2 plasma. Vertical etching profiles and a smooth etched surface were obtained. The average roughness of the etched bottom surface was 1 nm, which satisfied the requirements for optical device fabrication. We believe that the proposed etching process using F2 of zero-global-warming-potential gases is very simple and useful for fabricating optical devices and micro-electromechanical systems (MEMSs).

  5. Nanopillar ITO electrodes via argon plasma etching

    SciTech Connect

    Van Dijken, Jaron G.; Brett, Michael J.

    2012-07-15

    The authors demonstrate the formation of vertically aligned indium tin oxide (ITO) nanopillars by exposing planar ITO films to Ar plasma, the conditions of which determine the size, spacing, and aspect ratio of the pillars. Annealing in air and forming gas is used to recover and optimize the optical transmittance and electrical conductivity of the nanopillar films. The final product is an ITO film whose superior optical transmittance and strong electrical conductivity combine with its robust columnar morphology and processing scalability to make it suitable for use in highly absorbing organic solar cells.

  6. Dependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH{sub 4}/H{sub 2} reactive ion etching

    SciTech Connect

    Yamamoto, Norio

    2011-04-01

    We studied selective etching and polymer deposition in submicrometer pitch gratings on the surface of InP using reactive ion etching with methane and hydrogen and investigated the plasma condition dependence of the selectivity. Using a mask structure consisting of regions with and without a thick layer on a grating-patterned thin layer, we achieved selective etching in submicrometer pitch gratings. In experiments conducted on the same surface at the same time, the InP is selectively etched in the window of the grating in the region with the thick layer, but it is not etched, and polymer is deposited, in the window of the grating in the region without the thick layer. We found that the selectivity depends on the plasma conditions, such as the hydrogen flow rate, pressure, and plasma power in reactive ion etching. This dependence might result from the variation in the ionic atoms of hydrogen or hydrocarbon/hydrogen, which are attracted to the charged mask and supplied to the window of the grating.

  7. Performance enhancement of IPMC by anisotropic plasma etching process

    NASA Astrophysics Data System (ADS)

    Lee, Seok Hwan; Kim, Chul-Jin; Hwang, Hyun-Woo; Kim, Sung-Joo; Yang, Hyun-Seok; Park, No-Cheol; Park, Young-Pil; Park, Kang-Ho; Lee, Hyung-Kun; Choi, Nak-Jin

    2009-03-01

    Ionic Polymer-Metal Composites (IPMCs) of EAP actuators is famous for its good property of response and durability. The performance of Ionic Polymer-Metal Composites (IPMCs) is an important issue which is affected by many factors. There are two factors for deciding the performance of IPMC. By treating anisotropic plasma etching process to 6 models of the IPMCs, enhanced experimental displacement and force results are obtained. Plasma patterning processes are executed by changing the groove and the land length of 6 patterns. The purpose of the present investigation is to find out the major factor which mainly affects the IPMC performance. Simulations using ANSYS have been executed to compare with the experimental results about the values and the tendency of data. Experimental and simulating data of the performances seem to have similar tendency. In the next part of the paper, we observed the other properties like capacitance, resistance and stiffness of 6 plasma patterned IPMCs. And we observed that the stiffness is the major factor which affects the performance of IPMCs. As we seen, our problem has been reduced to investigate about the property of stiffness. We suggest that the stiffness is largely changed mainly because of the different thickness of Platinum stacked of the groove and the land part which are produced by anisotropic plasma etching processes. And we understand that anisotropic plasma patterned IPMCs of better performance can be applied to various applications.

  8. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGESBeta

    Henry, Michael David; Douglas, Erica Ann

    2016-08-31

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  9. Optical and electrical diagnostics of fluorocarbon plasma etching processes

    NASA Astrophysics Data System (ADS)

    Booth, Jean-Paul

    1999-05-01

    This article reviews recent work concerning the role of CF and CF2 radicals in etching and polymerization processes occurring in capacitively coupled radio-frequency plasmas in fluorocarbon gases used for the selective etching of SiO2 layers in microelectronic device fabrication. Laser-induced fluorescence (LIF) was used to determine time-resolved axial concentration profiles of these species in continuous and pulse-modulated CF4 and C2F6 plasmas. Calibration techniques, including broad-band UV absorption spectroscopy, were developed to put the LIF measurements on an absolute scale. A novel technique was used to determine the ion flux to the reactor walls in these polymerizing environments. The mass distribution of the ions arriving at the reactor walls was determined using a quadrupole mass spectrometer. It was found that CFx radicals are produced predominantly by the reflection of neutralized and dissociated CFx+ ions at the powered electrode surface. When the fluorine atom concentration is high, the CFx radicals are destroyed effectively by recombination catalysed by the reactor walls. When the fluorine atom concentration is lowered, the CF2 concentration rises markedly, and it participates in gas-phase oligomerization processes, forming large CxFy molecules and, after ionization, large CxFy+ ions. These species appear to be the true polymer precursors. This mechanism explains the well known correlation between high CF2 concentrations, polymer deposition and SiO2 over Si etch selectivity.

  10. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  11. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  12. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)
    Etching-Monitoring Using Quadrupole Mass Spectrometry

    NASA Astrophysics Data System (ADS)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  13. Understanding anisotropic plasma etching of two-dimensional polystyrene opals for advanced materials fabrication.

    PubMed

    Akinoglu, Eser M; Morfa, Anthony J; Giersig, Michael

    2014-10-21

    Anisotropic deformation of polystyrene particles in an oxygenated (O2/Ar) plasma is observed for radio frequency (rf) plasma and inductively coupled plasma (ICP). A facile model based on a ratio of completely isotropic and completely anisotropic etching is presented to describe the anisotropy of the etching process and is implemented to determine the height of the spheroid-shaped polystyrene particles. In our systems, we find the plasma etching to be 54% isotropic in the rf plasma and 79% isotropic in the ICP. With this model, the maximum material deposition thickness for nanofabrication with plasma-etched nanosphere lithography or colloid lithography can be predicted. Moreover, the etching of polystyrene particles in an oxygenated plasma is investigated versus the etching time, gas flow, gas composition, temperature, substrate material, and particle size. The results of this study allow precise shape tuning during the fabrication of nanostructured surfaces with size-dependent properties for bionic, medical, and photonic applications. PMID:24580644

  14. Understanding anisotropic plasma etching of two-dimensional polystyrene opals for advanced materials fabrication.

    PubMed

    Akinoglu, Eser M; Morfa, Anthony J; Giersig, Michael

    2014-10-21

    Anisotropic deformation of polystyrene particles in an oxygenated (O2/Ar) plasma is observed for radio frequency (rf) plasma and inductively coupled plasma (ICP). A facile model based on a ratio of completely isotropic and completely anisotropic etching is presented to describe the anisotropy of the etching process and is implemented to determine the height of the spheroid-shaped polystyrene particles. In our systems, we find the plasma etching to be 54% isotropic in the rf plasma and 79% isotropic in the ICP. With this model, the maximum material deposition thickness for nanofabrication with plasma-etched nanosphere lithography or colloid lithography can be predicted. Moreover, the etching of polystyrene particles in an oxygenated plasma is investigated versus the etching time, gas flow, gas composition, temperature, substrate material, and particle size. The results of this study allow precise shape tuning during the fabrication of nanostructured surfaces with size-dependent properties for bionic, medical, and photonic applications.

  15. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  16. RAPID COMMUNICATION: High silicon etch rates by hot filament generated atomic hydrogen

    NASA Astrophysics Data System (ADS)

    Wanka, H. N.; Schubert, M. B.

    1997-04-01

    The etching of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon by hot tungsten filament generated atomic hydrogen has been investigated. Room-temperature etch rates of 27 Å 0022-3727/30/8/002/img1 for amorphous and 20 Å 0022-3727/30/8/002/img1 for microcrystalline silicon have been achieved. Boron doping decreases the etch rate, whereas phosphorus doping does not affect it. No surface roughening occurs, even for the highest a-Si:H etch rates. In the initial phase of the etch process, however, a bond structure modification arises close to the surface. An increase of microcrystalline silicon etch rates towards the substrate/film interface reflects the coalescence of the microcrystalline nuclei. Hot filament atomic hydrogen etching provides high etch rates of amorphous and polycrystalline silicon with a high selectivity against metals and thermal oxide. Due to its simple setup and control, this kind of hydrogen etching is very interesting for applications in semiconductor technology where F- or Cl-etchants are to be avoided.

  17. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching

    NASA Astrophysics Data System (ADS)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-01

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  18. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching.

    PubMed

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-01

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  19. Plasma etching of single fine particle trapped in Ar plasma by optical tweezers

    NASA Astrophysics Data System (ADS)

    Ito, T.; Koga, K.; Yamashita, D.; Kamataki, K.; Itagaki, N.; Uchida, G.; Shiratani, M.

    2014-06-01

    Physical and chemical interactions between plasmas and nano-featured surfaces are one important issue in the plasma processing. Here we optically trap single fine particle levitated at plasma/sheath boundary with an infrared laser to realize in-situ analysis of such interactions. We have measured time evolution of the diameter of the single fine particle in Ar plasma. The trapped particle was etched at an etching rate of 1 nm/min in Ar plasma. We also obtained a Raman peak at around 2950 cm-1 corresponding to C-H bonds in the single fine particle in Ar plasma. The results open a new possibility to observe directly interactions between plasma and single fine particle.

  20. Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

    NASA Astrophysics Data System (ADS)

    Benson, J. David; Stoltz, Andrew J., Jr.; Kaleczyc, Andrew W.; Martinka, Mike; Almeida, Leo A.; Boyd, Phillip R.; Dinan, John H.

    2002-12-01

    Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

  1. Group-III Nitride Etch Selectivity in BCl(3)/Cl(2) ICP Plasmas

    SciTech Connect

    Abernathy, C.R.; Han, J.; Hong, J.; Lester, L.F.; Pearton, S.J.; Shul, R.J.; Willison, C.G.; Zhang, L.

    1998-12-09

    Patterning the group-IH nitrides has been challenging due to their strong bond energies and relatively inert chemical nature as compared to other compound semiconductors. Plasma etch processes have been used almost exclusively to pattern these films. The use of high-density plasma etch systems, including inductively coupled plasmas (ICP), has resulted in relatively high etch rates (often greater than 1.0 pmhnin) with anisotropic profiles and smooth etch morphologies. However, the etch mechanism is often dominated by high ion bombardment energies which can minimize etch selectivity. The use of an ICP-generated BCl~/C12 pkyma has yielded a highly versatile GaN etch process with rates ranging from 100 to 8000 A/rnin making this plasma chemistry a prime candidate for optimization of etch selectivity. In this study, we will report ICP etch rates and selectivities for GaN, AIN, and InN as a function of BCl~/Clz flow ratios, cathode rf-power, and ICP-source power. GaN:InN and GaN:AIN etch selectivities were typically less than 7:1 and showed the strongest dependence on flow ratio. This trend maybe attributed to faster GaN etch rates observed at higher concentrations of atomic Cl which was monitored using optical emission spectroscopy (OES). ~E~~~~f:~ INTRODUCTION DEC j 4898 Etch selectivi

  2. Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

    NASA Astrophysics Data System (ADS)

    Shim, Kyu-Hwan; Yang, Ha Yong; Kil, Yeon-Ho; Yang, Hyeon Deok; Yang, Jong-Han; Hong, Woong-Ki; Kang, Sukill; Jeong, Tae Soo; Kim, Taek Sung

    2012-08-01

    The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ˜200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ˜1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

  3. A versatile masking process for plasma etched backside via holes in GaAs

    NASA Astrophysics Data System (ADS)

    Howard, A. J.; Shul, R. J.; Lovejoy, M. L.; Word, J. C.

    We have developed a versatile backside via patterning process for a visible transmission modulator application. The vias are processed on mechanically thinned (approximately)100 micrometers thick GaAs using a (approximately)45 micrometers thick, negative tone, photo definable Polyimide mask and Reaction Ion Etch (RIE) plasma etching. The Polyimide masking process was found to be superior in both etch resistance and ease of use (more robust process, thicker, straighter sidewall Profile films, were more easily attained) to masking with standard optical photoresist. With the improved etch resistance (GaAs-to-polyimide etch selectivities of 10:1) we were able to Optimize Cl2-based plasma chemistries and etching conditions to achieve high GaAs etch rates in the RIE exceeding 5.0 micrometers/min. These etch optimization results along with our novel via patterning process are reported in this paper.

  4. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  5. Etching of ruthenium coatings in O{sub 2}- and Cl{sub 2}-containing plasmas

    SciTech Connect

    Hsu, C.C.; Coburn, J.W.; Graves, D.B.

    2006-01-15

    Ruthenium (Ru) film etching has been studied with O{sub 2}- and Cl{sub 2}-containing inductively coupled plasmas to understand the etching mechanism and the relationship between plasma characteristics and the competition between the wall deposition of etch by-products and the creation of volatile etch by-products that flow into the downstream. The ICP was characterized by multiple in situ diagnostic tools. Ru films were etched either from 6-in. wafers placed on a rf-biased substrate or from Ru-coated QCMs without a Ru-coated wafer present. Ru etches readily in O{sub 2}-containing plasma. Cl{sub 2} addition resulted in significant changes in etch rate, wall deposition behavior, and the downstream etch product composition. When Ru was etched by Ar/O{sub 2} plasmas, a positive wall deposition rate was observed and no RuO{sub 4} was observed in the foreline. The etching rate correlated well with the oxygen radical density. With Cl{sub 2} addition, our observations included the significantly increased etching rate, the detection of RuO{sub 4} downstream by FTIR, the detection of RuO{sub x}Cl{sub y} ions in the plasma, and virtually zero wall deposition. The increased etch rate with Cl{sub 2} addition was not solely due to an increase in O atom concentration, plasma density, plasma potential or the electron energy distribution. It is believed that both O- and Cl-containing species (ions and/or neutrals) are necessary to explain the different behavior in Ru etching by using Cl{sub 2} and O{sub 2}-containing plasmas.

  6. High-Density Plasma-Induced Etch Damage of GaN

    SciTech Connect

    Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-04-29

    Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias andlor high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.

  7. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

    NASA Astrophysics Data System (ADS)

    Zhu, Weiye; Sridhar, Shyam; Liu, Lei; Hernandez, Eduardo; Donnelly, Vincent M.; Economou, Demetre J.

    2014-05-01

    Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%-50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br2/Ar and HBr/Cl2/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF2, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl2/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to ⟨110⟩ cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

  8. Radical surface interactions in industrial silicon plasma etch reactors

    NASA Astrophysics Data System (ADS)

    Cunge, G.; Vempaire, D.; Ramos, R.; Touzeau, M.; Joubert, O.; Bodard, P.; Sadeghi, N.

    2010-06-01

    Silicon etching in Cl2-based plasmas is an important step for the fabrication of IC circuits but the plasma surface interactions involved in this process remain poorly understood. Based on the developments in plasma and reactor wall diagnostics, this paper reviews the recent progress in the understanding of radicals' interactions with surfaces during silicon etching processes. X-ray photoelectron spectroscopy analysis of the reactor walls shows that during Si etching in Cl2/O2 plasmas, the initial Al2O3 chamber walls are coated with a thin SiOCl layer. Broadband absorption spectroscopy with UV light emitting diodes is used to measure the densities of SiClX radicals (X = 0-2) and Cl2 molecules in steady state plasmas running with the chamber walls coated with different materials. To estimate the surface sticking/recombination probability of these radicals on different surfaces, we have performed time-resolved absorption measurements in the afterglow of pulsed discharges. Our work, in agreement with previous results, shows that the Cl2/Cl density ratio in the discharge is driven mainly by the chemical nature of the chamber walls explaining why process drifts are often observed in Cl2/O2 plasmas. The recombination coefficient of Cl atoms on SiOCl surfaces is about 0.007, while it is about 0.1 on clean walls (AlF3). Based on these results, we discuss the best strategy leading to reproducible process control, the present strategy being a systematic reactor cleaning/conditioning between wafers. The SiOCl layer deposition mechanism is then discussed in detail. The sticking coefficient of SiCl on this surface is near unity, while SiCl2 appears to be weakly reactive toward it. Therefore, SiCl (and SiCl+ ions) are the main vectors of Si deposition on the reactor walls, where their subsequent oxidization by O atoms leads to the formation of a SiOCl deposit. Furthermore, we show that SiCl reaction in the plasma volume with Cl2, through the exchange reaction SiCl + Cl2 → Si

  9. Particle behavior in an ECR plasma etch tool

    SciTech Connect

    Blain, M.G.; Tipton, G.D.; Holber, W.M.; Westerfield, P.L.; Maxwell, K.L.

    1993-09-01

    Sources of particles in a close-coupled electron cyclotron resonance (ECR) polysilicon plasma etch source include flaking of films deposited on chamber surfaces, and shedding of material from electrostatic wafer chucks. A large, episodic increase in the number of particles added to a wafer in a clean system is observed more frequently for a plasma-on than for a gas-only source condition. For polymer forming process conditions, particles were added to wafers by a polymer film which was observed to fracture and flake away from chamber surfaces. The presence of a plasma, especially when rf bias is applied to the wafer, caused more particles to be ejected from the walls and added to wafers than the gas-only condition; however, no significant influence was observed with different microwave powers. A study of effect of electrode temperatures on particles added showed that thermophoretic forces are not significant for this ECR configuration. Particles originating from the electrostatic chuck were observed to be deposited on wafers in much larger numbers in the presence of the plasma as compared to gas-only conditions.

  10. Diamond growth on Fe-Cr-Al alloy by H{sub 2}-plasma enhanced graphite etching

    SciTech Connect

    Li, Y. S.; Hirose, A.

    2007-04-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370 to 740 degree sign C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface.

  11. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    NASA Astrophysics Data System (ADS)

    Wang, Lijun; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  12. Energy dependence of ion-assisted chemical etch rates in reactive plasmas

    SciTech Connect

    Stafford, L.; Margot, J.; Chaker, M.; Pearton, S.J.

    2005-08-15

    In a highly cited paper, Steinbruechel [C. Steinbruechel, Appl. Phys. Lett. 55, 1960 (1989)] has demonstrated that in the sub-keV region the etch yield scales like the square root of the ion energy. Based on this result, many authors have subsequently applied this specific energy dependence to ion-assisted chemical etch rates of various materials in different etch tools. In this work, it is demonstrated that in contrast to the etch yield, the etch rate cannot universally be modeled by a simple square-root energy dependence. A novel model accounting for the correct energy dependence of ion-assisted chemical etch rates is therefore proposed. Application of this model to the etching of SiO{sub 2} and ZnO in halogenated plasma chemistries provides a quantitative description of the simultaneous dependence of the etch rate on ion energy and on ion and reactive neutral fluxes.

  13. High-Density Plasma Etching of Group-III Nitride Films for Device Application

    SciTech Connect

    Baca, A.G.; Crawford, M.H.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-02-17

    As III-V nitride device structures become more complicated and design rules shrink, well-controlled etch processes are necessary. Due to limited wet chemical etch results for the group-III nitrides, a significant amount of effort has been devoted to the development of dry etch processing. Dry etch development was initially focused on mesa structures where high etch rates, anisotropic profiles, smooth sidewalls, and equi-rate etching of dissimilar materials were required. For example, commercially available LEDs and laser facets for GaN-based laser diodes have been patterned using reactive ion etching (RIE). With the recent interest in high power, high temperature electronic devices, etch characteristics may also require smooth surface morphology, low plasma-induced damage, and selective etching of one layer over another. The principal criteria for any plasma etch process is its utility in the fabrication of a device. In this study, we will report plasma etch results for the group-III nitrides and their application to device structures.

  14. Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

    NASA Astrophysics Data System (ADS)

    Jiang, Xiaolong; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2015-11-01

    In this work, we introduce an optimum ICP etching technique that successfully removes the subsurface damage (SSD) layer of fused silica without causing plasma induced surface damage (PISD) or lateral etching of SSD. As one of the commonest PISD initiators, metal contamination from reactor chamber is prevented by employing a simple isolation device. Based on this device, a unique low-density pitting damage is discovered and subsequently eliminated by optimizing the etching parameters. Meanwhile etching anisotropy also improves a lot, thus preventing the lateral etching of SSD. Using this proposed technique, SSD layer of fused silica is successfully removed with a surface roughness of 0.23 nm.

  15. Smooth and Vertical Profile Dry Etching of Si Using XeF2 Plasma

    NASA Astrophysics Data System (ADS)

    Matsutani, Akihiro; Ohtsuki, Hideo; Koyama, Fumio

    2009-06-01

    We demonstrated the discharge of XeF2 plasma and investigated the dry etching process of Si using XeF2 plasma. A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device fabrication, were obtained. The etching rate of Si was 0.7 µm/min at 1 Pa and 100 W. It was found that the RF power dependences of the emission intensities of Xe, F, and XeF were similar to that of the etching rate of Si. The etching rate ratio of Si to SiO2 in the XeF2 plasma etching process was approximately 10, which was much larger than that in the CF4/O2 plasma etching process. We believe that XeF2 plasma etching is a very simple and useful process for Si-based optical devices such as photonic crystals, narrow optical waveguides, and micro-electro-mechanical systems (MEMS) device fabrication.

  16. Low Temperature Plasma Surface Interactions: Atomic Layer Etching And Atmospheric Pressure Plasma Jet Modification Of Biomaterials

    NASA Astrophysics Data System (ADS)

    Oehrlein, Gottlieb

    2013-09-01

    Control of plasma-surface interactions is essential for successful application of low temperature plasma to materials processing. We review work performed in our laboratory in two areas: First, low pressure plasma surface interaction mechanisms aimed at achieving atomic precision in etching materials in the semiconductor industry. We discuss sequential reactions of surface passivation followed by directional low energy ion attack for ``volatile product'' removal to establish for what conditions self-limiting behavior required for Atomic Layer Etching (ALE) can be established using prototypical SiO2 -Si/fluorocarbon-Ar materials/etching systems. Second, studies of plasma-surface interactions related to application of a non-equilibrium atmospheric pressure plasma jet (APPJ) for modification of biomaterials are discussed. Changes in surface chemistry/biological activity of lipopolysaccharide (LPS) exposed to the APPJ plume/effluent in a controlled environment are reviewed. The results clarify how jet chemistry and interactions of plasma with the environment impact the consequences of APPJ-biomaterial-surface interactions. Based on collaborations with D. Metzler, S. Engelmann, R. Bruce, E. Joseph, E. Bartis, C. Hart, Q.-Y. Yang, J. Seog, T.-Y. Chung, H.-W. Chang, and D.B. Graves. We gratefully acknowledge funding from US Department of Energy (DE-SC0005105; DE-SC0001939) and National Science Foundation (CBET-1134273; PHY-1004256).

  17. CF3Br plasma cryo etching of low-k porous dielectric

    NASA Astrophysics Data System (ADS)

    Clemente, I.; Koehler, N.; Miakonkikh, A.; Zimmermann, S.; Schulz, S. E.; Rudenko, K.

    2016-08-01

    Process of plasma etching of CVD low-k dielectric was studied. We used CF3Br low pressure ICP plasma for etching at cryo temperatures (-20°C — -100°C), pressures (5-20 mTorr) and RF bias with effective DC voltage 80-140 V. Refractive index of film and its thickness were measured by spectral ellipsometry. Ellipsometric porosimetry was employed to compare pore size distribution before and after etching of films. Measurements show increasing of etch rate increase with decreasing sample temperature.

  18. Plasma characteristics and etch uniformity in CF4 magnetron etching using an annular permanent magnet

    NASA Astrophysics Data System (ADS)

    Kinoshita, Haruhisa; Ishida, Toshimasa; Ohno, Seigo

    1987-11-01

    Etch characteristics of SiO2 and Si obtained by magnetron etching using an annular permanent magnet were analyzed. From these analyses, etch characteristics were found to be classified into three regimes. Remarkable enhancements in SiO2 etch rate, 25-40 times, were observed at constant Vrf by applying magnetic field of 150 G. Ion densities over the cathode were found to be distributed linearly along the E×B drift direction. Such an ion density distribution will be formed by the repeated process (ionization→ion bombardment→electron emission and drift→ionization). Etch distribution can be averaged and flattened to a uniformity of below ±2% by the magnetic field being rotated in 90° steps.

  19. Hydrogen Plasma Interactions with Silicon Surfaces.

    NASA Astrophysics Data System (ADS)

    Schneider, Thomas Peter

    H-plasma interactions with Si surfaces are investigated with plasma, surface, and subsurface characterization. The H-plasma is characterized with a double Langmuir probe (DLP) and a catalytic probe (CP). The DLP results indicate that the plasma density ({~} 10^9 cm^{ -3}) in the discharge excitation region is essentially constant in the range 10-300 mTorr. In contrast, the plasma density in the sample region ({ ~}40 cm away) decreases with increasing pressure ({~}10 ^8 and {~}10 ^6 H^+ ions cm^{-3} at 15 and 300 mTorr, respectively). The CP measurements indicate that the atomic H density is {~}10 ^{11} cm^ {-3} and independent of pressure in the range 10-250 mTorr. By-products of the interaction between the H-plasma and the Si surface are detected by residual gas analysis (RGA). The RGA data indicates the formation of SiH_4 during H-plasma exposures which is attributed to etching. Peak intensity trends of the SiH_2 (30 amu) species indicates that increased surface temperature decreases the SiH _2 signal. Since the atomic H concentration is three to five orders of magnitude greater than the ion density, we conclude from the RGA data that the surface etching is due to the atomic H and the surface temperature. This effect is observed from Si (100), Si (110), and Si (111) surfaces. The Si surfaces are characterized with low energy electron diffraction (LEED), angle resolved uv-photoemission (ARUPS), and cross sectional transmission electron microscopy (TEM). The LEED results indicate that by varying the surface temperature and hydrogen pressure, the surface morphology can be described by 1 x 1, 3 x 1, or 2 x 1 surface reconstructions. The 1 x 1 and 2 x 1 symmetries are stable in the ranges 50 -200^circC and 300-400 ^circC, respectively, and 10-300 mTorr. The 3 x 1 symmetry is stable around 250^circ C and 150 mTorr. The ARUPS results indicate that the Si (100) 1 x 1 surface obtained after ex situ chemical cleaning exhibits disorganized electronic states. Following H-plasma

  20. Formation of plasma induced surface damage in silica glass etching for optical waveguides

    NASA Astrophysics Data System (ADS)

    Choi, D. Y.; Lee, J. H.; Kim, D. S.; Jung, S. T.

    2004-06-01

    Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit.

  1. Hydrogen manufacturing using plasma reformers

    SciTech Connect

    Bromberg, L.; Cohn, D.R.; Rabinovich, A.; Hochgreb, S.; O`Brien, C.

    1996-10-01

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes; in particular the possibility of virtual elimination of CO{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  2. Novel spin-on organic hardmask with high plasma etch resistance

    NASA Astrophysics Data System (ADS)

    Oh, Chang-Il; Lee, Jin-Kuk; Kim, Min-Soo; Yoon, Kyong-Ho; Cheon, Hwan-Sung; Tokareva, Nataliya; Song, Jee-Yun; Kim, Jong-Seob; Chang, Tu-Won

    2008-03-01

    In recent years for memory devices under 70nm using ArF lithography, spin-on organic hardmask has become an attractive alternative process to amorphous carbon layer hardmark (ACL) in mass production due to ACL hardmask's limited capacity, high cost-of-ownership, and low process efficiency in spite of its excellent etch performance. However, insufficient plasma etch resistance of spin-on hardmask makes the etch process an issue resulting in inadequate vertical profiles, large CD bias, and narrow etch process window compared to ACL hardmask. In order to be able to apply these spin on hardmasks to varies layers including critical layers, the aforementioned problems need to be resolved and verified using several evaluation methods including etch pattern evaluation. In this paper, we report the synthesis of novel organic spin-on hardmasks (C-SOH) that incorporate various fused aromatic moieties into polymer chain and the evaluation of etch performance using dry etch tools. Organic spin-on hardmasks with 79-90 wt% carbon contents were synthesized in-house. Oxygen and fluorine based plasma etch processes were used to evaluate the etch resistance of the C-SOH. The results show our 3rd generation C-SOH has etch profiles comparable to that of ACL in a 1:1 dense pattern.

  3. In-flight dry etching of plasma-synthesized silicon nanocrystals

    SciTech Connect

    Pi, X. D.; Liptak, R. W.; Campbell, S. A.; Kortshagen, U.

    2007-08-20

    CF{sub 4}-based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by SiH{sub 4}-based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of CF{sub 4}-based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly {approx}100 h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.

  4. Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Popovic, Svetozar; Valente-Feliciano, Anne -Marie; Phillips, H. Larry; Vuskovic, Leposova

    2015-03-18

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. Furthermore, to understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  5. Etching mechanism of niobium in coaxial Ar/Cl{sub 2} radio frequency plasma

    SciTech Connect

    Upadhyay, J.; Im, Do; Popović, S.; Vušković, L.; Valente-Feliciano, A.-M.; Phillips, L.

    2015-03-21

    The understanding of the Ar/Cl{sub 2} plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl{sub 2} concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  6. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

    2016-08-01

    Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

  7. Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces

    NASA Astrophysics Data System (ADS)

    Kim, Joon Hyub; Lee, Jun-Yong; Min, Nam Ki

    2012-08-01

    We present an effective method for the batch fabrication of miniaturized single-walled carbon nanotube (SWCNT) film electrodes using oxygen plasma etching. We adopted the approach of spray-coating for good adhesion of the SWCNT film onto a pre-patterned Pt support and used O2 plasma patterning of the coated films to realize efficient biointerfaces between SWCNT surfaces and biomolecules. By these approaches, the SWCNT film can be easily integrated into miniaturized electrode systems. To demonstrate the effectiveness of plasma-etched SWCNT film electrodes as biointerfaces, Legionella antibody was selected as analysis model owing to its considerable importance to electrochemical biosensors and was detected using plasma-etched SWCNT film electrodes and a 3,3',5,5'-tetramethyl-benzidine dihydrochloride/horseradish peroxidase (TMB/HRP) catalytic system. The response currents increased with increasing concentration of Legionella antibody. This result indicates that antibodies were effectively immobilized on plasma-etched and activated SWCNT surfaces.

  8. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

    SciTech Connect

    Gul, Banat; Aman-ur-Rehman

    2015-10-15

    Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

  9. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

    SciTech Connect

    Zhu, Weiye; Sridhar, Shyam; Liu, Lei; Hernandez, Eduardo; Donnelly, Vincent M. Economou, Demetre J.

    2014-05-28

    Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

  10. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    DOEpatents

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  11. Production of energetic ions in plasma by ambipolar fields: Application to etching

    SciTech Connect

    Park, Wontaek; Tolmachev, Yu. N.; Volynets, V. N.; Pashkovskiy, V. G.

    2007-07-15

    A plasma accelerator based on inductively coupled plasma source, which is able to produce an axially directed flux of accelerated ions onto the wafer without applying the bias voltage, has been studied and utilized in a semiconductor etch process. Ion kinetic energies up to 60 eV have been measured for an absorbed power of about 800 W, while the plasma density was {approx}10{sup 10} cm{sup -3} at the plasma source exit. The experimental results show that the plasma accelerator can be used for an anisotropic etch process without the radio-frequency bias of the substrate.

  12. Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

    NASA Astrophysics Data System (ADS)

    Matsutani, Akihiro; Ishiwari, Fumitaka; Shoji, Yoshiaki; Kajitani, Takashi; Uehara, Takuya; Nakagawa, Masaru; Fukushima, Takanori

    2016-06-01

    We report the etching properties of tripodal paraffinic triptycene (TripC12) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl2 plasma etching. Using thermally nanoimprinted TripC12 films, we achieved microfabrication of a GaAs substrate by Cl2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy confirmed that the chemical structure of TripC12 remains intact after the ICP etching process using Cl2. We believe that TNIL using TripC12 films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs).

  13. Characterization of the NiFe sputter etch process in a rf plasma

    SciTech Connect

    Kropewnicki, Thomas J.; Paterson, Alex M.; Panagopoulos, Theodoros; Holland, John P.

    2006-05-15

    The sputter etching of NiFe thin films by Ar ions in a rf plasma has been studied and characterized with the use of a Langmuir probe. The NiFe sputter etch rate was found to depend strongly on incident ion energy, with the highest NiFe etch rates occurring at high rf bias power, low pressure, and moderate rf source power. NiFe etch rates initially increased with increasing rf source power, then saturated at higher rf source powers. Pressure had the weakest effect on NiFe etch rates. Empirically determined sputter yields based on the NiFe etch rates and ion current densities were calculated, and these compared favorably to sputter yields determined using the sputtering model proposed by Sigmund [Phys. Rev. 184, 383 (1969)].

  14. Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Zhang, S.; Hu, X. N.; Ding, R. J.; He, L.

    2016-05-01

    To fabricate various advanced structures with HgCdTe material, the Inductively Coupled Plasma enhanced Reactive Ion Etching system is indispensable. However, due to low damage threshold and complicated behaviors of mercury in HgCdTe, the lattice damage and induced electrical conversion is very common. According to the diffusion model during etching period, the mercury interstitials, however, may not diffuse deep into the material at cryogenic temperature. In this report, ICP etching of HgCdTe at cryogenic temperature was implemented. The etching system with cryogenic assembly is provided by Oxford Instrument. The sample table was cooled down to 123K with liquid nitrogen. The mask of SiO2 with a contact layer of ZnS functioned well at this temperature. The selectivity and etching velocity maintained the same as reported in the etching of room temperature. Smooth and clean surfaces and profiles were achieved with an optimized recipe.

  15. Deep GaN etching by inductively coupled plasma and induced surface defects

    SciTech Connect

    Ladroue, J.; Meritan, A.; Boufnichel, M.; Lefaucheux, P.; Ranson, P.; Dussart, R.

    2010-09-15

    GaN etching was studied in Cl{sub 2}/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to depend strongly on bias power. After optimization, an etch rate greater than 1000 nm/min was achieved. A second part of this work is dedicated to the etched surface defects. An original method to estimate GaN dislocation density and to localize nanopipes in the material is presented. Columnar defects could also appear with impurities in the etching reactor. The authors also present a possible formation mechanism of those columnar defects.

  16. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  17. Anisotropic pattern transfer in ultrananocrystalline diamond films by inductively coupled plasma etching.

    PubMed

    Park, Jong Cheon; Kim, Seong Hak; Cha, Seung Uk; Jeong, Geun; Kim, Tae Gyu; Kim, Jin Kon; Cho, Hyun

    2014-12-01

    High density plasma etching of ultrananocrystalline diamond (UNCD) films wasperformed in O2 and O2/Ar inductively coupled plasma (ICP) discharges. The O2/Ar ICP discharges produced higher etch rates due to enhanced physical component of the etching, and a maximum etch rate of -280 nm/min was obtained in 10 sccm O2/5 sccm Ar discharges. Very high etch selectivities up to -140:1 were obtained for the UNCD over Al mask layer. Anisotropic pattern transfer with a vertical sidewall profile was achieved in the 10 sccm O2/5 sccm Ar discharges at a relatively low source power (300 W) and a moderate rf chuck power (200 W). PMID:25971013

  18. Influence of plasma etching in a multi chamber system on a-Si solar cell performance

    NASA Astrophysics Data System (ADS)

    Kausche, H.; Moeller, M.; Plaettner, R.

    The plasma-CVD deposition system consisting of two chambers and developed at Siemens can deposit 9 pin solar cells of 100 sq cm simultaneously. Cleaning of the internal surfaces coated with a-Si is performed by plasma etching. The etch gases CF4+O2, SF6 and NF3 were investigated with respect to their etch rates, their efficacy in cleaning 'hidden' parts in the chamber, and with respect to the etching reaction products affecting the performance of the subsequently deposited cells. Mass spectrometric cell performance measurements were therefore taken. The sequence of etching with CF4+O2 or NF3, glow discharge in Ar+H2, pre-deposition of a-Si and cell deposition proved to be a suitable method for achieving high cell performance.

  19. Comparison of CF4 and SF6 based plasmas for ECR etching of isotopically enriched 10Boron films

    SciTech Connect

    Voss, L F; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-02-23

    Isotopically enriched {sup 10}boron films have been successfully etched in an ECR etching tool using CF{sub 4} and SF{sub 6} based plasmas. Comparisons between the two are made with regards to etch rate, selectivity to the underlying Si device structure, and morphology of the {sup 10}boron post-etching. The present film etching development is expected to be critical for the fabrication of next generation thermal neutron solid state detectors based on {sup 10}boron.

  20. Tantalum carbide etch characterization in inductively coupled Ar/Cl{sub 2}/HBr plasmas

    SciTech Connect

    Kawai, H.; Rauf, S.; Luckowski, E.; Ventzek, P. L. G.

    2006-09-15

    The etching properties of tantalum carbide (TaC) in inductively coupled Ar/HBr/Cl{sub 2} plasmas are investigated in this article. Both etching experiments on patterned and blanket wafers and an integrated plasma equipment-feature scale computational model are utilized in this investigation. Results show that TaC etching is adequately described by the classical reactive ion etching mechanism, whereby etching occurs due to the synergistic effect of Cl or Br atoms and energetic ions. TaC etches faster in the presence of Cl relative to Br. The TaC etch rate is small in gas mixtures containing 5% of Cl{sub 2} or HBr and 95% of Ar, and it increases considerably as Cl{sub 2} or HBr concentration is increased. Although this etch rate increase is partially due to the availability of more Cl or Br, the chemical nature of chlorine (Cl{sub 2}{sup +},Cl{sup +}) or bromine (Br{sup +}) ions also plays a strong role. The TaC etch rate increases little if Cl{sub 2} or HBr fraction in Ar/Cl{sub 2} or Ar/HBr gas mixture, respectively, is increased beyond 25%. The TaC etch rate increases with rf bias power under all conditions. Scanning electron micrographs of TaC films etched using a patterned mask show that TaC sidewalls are tapered at about 77 deg. {+-}3 deg. and the angle does not change appreciably with gas mixture or rf bias power. It is determined that an angle dependent ion etching yield captures well the observed trends in TaC sidewall slope.

  1. Plasma etching of Hf-based high-k thin films. Part III. Modeling the reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Chang, Jane P.

    2009-03-15

    A generalized etch rate model was formulated to describe metal oxide etching in complex plasma chemistries, based on the understanding gained from detailed plasma characterization and experimental investigation into the metal oxide etching mechanisms. Using a surface site balance-based approach, the correct etch rate dependencies on neutral-to-ion flux ratio, ion energy, competing deposition and etching reaction pathways, and film properties were successfully incorporated into the model. The applicability of the model was assessed by fitting to experimental etch rate data in both Cl{sub 2} and BCl{sub 3} chemistries. Plasma gas phase analysis as well as etch and deposition rate measurements were used to calculate initial values and appropriate ranges for model parameter variation. Physically meaningful parameter values were extracted from the modeling fitting to the experimental data, thereby demonstrating the applicability of this model in assessing the plasma etching of other complex materials systems.

  2. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  3. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

    SciTech Connect

    Kuboi, Nobuyuki Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro

    2015-11-15

    The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

  4. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    SciTech Connect

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  5. A photoluminescence study of plasma reactive ion etching-induced damage in GaN

    NASA Astrophysics Data System (ADS)

    Mouffak, Z.; Bensaoula, A.; Trombetta, L.

    2014-11-01

    GaN films with reactive ion etching (RIE) induced damage were analyzed using photoluminescence (PL). We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D—A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D—A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D—A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.

  6. A statistical approach to optimization of alumina etching in a high density plasma

    SciTech Connect

    Li Xiao; Gupta, Subhadra; Highsmith, Alton; Paranjpe, Ajit; Rook, Katrina

    2008-08-01

    Inductively coupled plasma (ICP) reactive ion etching of Al{sub 2}O{sub 3} with fluorine-based gas chemistry in a high density plasma reactor was carried out in an initial investigation aimed at data storage applications. A statistical design of experiments was implemented to optimize etch performance with respect to process variables such as ICP power, platen power, direct current (dc) bias, and pressure. Both soft photoresist masks and hard metal masks were investigated in terms of etch selectivity and surface properties. The reverse power dependence of dc bias on the ratio of ICP to platen power was elucidated. Etch mechanisms in terms of physical and ion enhanced chemical etchings were discussed. The F-based chemistry greatly enhances the etch rate of alumina compared to purely physical processes such as ion milling. Etch rates as high as 150 nm/min were achieved using this process. A practical process window was developed for high etch rates, with reasonable selectivity to hard masks, with the desired profile, and with low substrate bias for minimal damage.

  7. On treatment of ultra-low-k SiCOH in CF4 plasmas: correlation between the concentration of etching products and etching rate

    NASA Astrophysics Data System (ADS)

    Lang, N.; Zimmermann, S.; Zimmermann, H.; Macherius, U.; Uhlig, B.; Schaller, M.; Schulz, S. E.; Röpcke, J.

    2015-04-01

    Low-pressure rf plasmas have been applied for etching of ultra-low-k SiCOH wafers using an Oxford Plasmalab System 100. In pure CF4 plasmas, SiCOH layers have been etched for different power values. Using quantum cascade laser absorption spectroscopy in the mid-infrared spectral range, the correlation of online and in situ measured concentrations of two etching products, CO and SiF4, with the ex situ determined etching rates has been studied. The concentration of SiF4 was found to range between 0.6 and 1.4 × 1013 molecules cm-3. In contrast the concentrations of CO were measured to be only about 50 % of the SiF4 density with 7 × 1012 molecules cm-3 in maximum. The production rate of SiF4, determined from the time behavior of its concentration after plasma ignition, was found to be between 1 and 5 × 1012 cm-3 s-1. The etching rates varied between 2 and 7 nm s-1. Both parameters increase nearly linearly with the applied rf power. It was found that for power values of up to 1.1 kW, the etching rate depends nearly linearly on the in situ monitored concentrations of both etching products. Therefore, the concentration of the etching products can be directly used as a measure of the etching rate.

  8. Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures

    NASA Astrophysics Data System (ADS)

    Liu, Zecheng; Pan, Jialin; Kako, Takashi; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2015-06-01

    Plasma-induced damage (PID) during plasma-etching processes was suppressed by the application of Cl2 plasma etching at an optimal temperature of 400 °C, based on results of evaluations of photoluminescence (PL), stoichiometric composition, and surface roughness. The effects of ions, photons, and radicals on damage formation were separated from the effects of plasma using the pallet for plasma evaluation (PAPE) method. The PID was induced primarily by energetic ion bombardments at temperatures lower than 400 °C and decreased with increasing temperature. Irradiations by photons and radicals were enhanced to form the PID and to develop surface roughness at temperatures higher than 400 °C. Consequently, Cl2 plasma etching at 400 °C resulted optimally in low damage and a stoichiometric and smooth GaN surface.

  9. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    SciTech Connect

    Li, Hu; Muraki, Yu; Karahashi, Kazuhiro; Hamaguchi, Satoshi

    2015-07-15

    Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +} or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.

  10. Charging effect simulation model used in simulations of plasma etching of silicon

    SciTech Connect

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Rangelow, Ivo W.; Cooke, Mike

    2012-10-15

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)-a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured-as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  11. Formation of PtSi Schottky barrier MOSFETs using plasma etching

    SciTech Connect

    Woo, Young Min; Hwang, Wan Sik; Yoo, Won Jong

    2015-03-15

    PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF{sub 6} based plasma etching. The addition of He-O{sub 2} in SF{sub 6} decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O{sub 2}/SF{sub 6} is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The I{sub DS}–V{sub DS} curves at various V{sub G}–V{sub TH} indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area.

  12. 3-Dimensional Modeling of Capacitively and Inductively Coupled Plasma Etching Systems

    NASA Astrophysics Data System (ADS)

    Rauf, Shahid

    2008-10-01

    Low temperature plasmas are widely used for thin film etching during micro and nano-electronic device fabrication. Fluid and hybrid plasma models were developed 15-20 years ago to understand the fundamentals of these plasmas and plasma etching. These models have significantly evolved since then, and are now a major tool used for new plasma hardware design and problem resolution. Plasma etching is a complex physical phenomenon, where inter-coupled plasma, electromagnetic, fluid dynamics, and thermal effects all have a major influence. The next frontier in the evolution of fluid-based plasma models is where these models are able to self-consistently treat the inter-coupling of plasma physics with fluid dynamics, electromagnetics, heat transfer and magnetostatics. We describe one such model in this paper and illustrate its use in solving engineering problems of interest for next generation plasma etcher design. Our 3-dimensional plasma model includes the full set of Maxwell equations, transport equations for all charged and neutral species in the plasma, the Navier-Stokes equation for fluid flow, and Kirchhoff's equations for the lumped external circuit. This model also includes Monte Carlo based kinetic models for secondary electrons and stochastic heating, and can take account of plasma chemistry. This modeling formalism allows us to self-consistently treat the dynamics in commercial inductively and capacitively coupled plasma etching reactors with realistic plasma chemistries, magnetic fields, and reactor geometries. We are also able to investigate the influence of the distributed electromagnetic circuit at very high frequencies (VHF) on the plasma dynamics. The model is used to assess the impact of azimuthal asymmetries in plasma reactor design (e.g., off-center pump, 3D magnetic field, slit valve, flow restrictor) on plasma characteristics at frequencies from 2 -- 180 MHz. With Jason Kenney, Ankur Agarwal, Ajit Balakrishna, Kallol Bera, and Ken Collins.

  13. Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar

    SciTech Connect

    Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G.; Zhang, L.

    1998-11-04

    Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering resorption of the etch products plays a dominant role in BC13/Ar ICP etching, while in Clz/Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 ~rnhnin are achieved in Clz/Ar plasmas with smooth surfaces and anisotropic profiles. In BC13/Ar plasmas, etch rates of 5100 Mmin and 4200 Mmin are obtained for GaSb and AIGaAsSb, respectively. The surfaces of both GaSb and AIGaAsSb etched in BC13/Ar plasmas remain smooth and stoichiometric over the entire range of plasma conditions investigated. This result is attributed to effective removal of etch products by physical sputtering. For a wide range of plasma conditions, the selectivity between GaSb and AIGaAsSb is close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-IR laser diodes.

  14. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas.

    PubMed

    Li, Yang; Wang, Cong; Yao, Zhao; Kim, Hong-Ki; Kim, Nam-Young

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

  15. Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation

    NASA Astrophysics Data System (ADS)

    Fukasawa, Masanaga; Miyawaki, Yudai; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Sekine, Makoto; Matsugai, Hiroyasu; Honda, Takayoshi; Minami, Masaki; Uesawa, Fumikatsu; Hori, Masaru; Tatsumi, Tetsuya

    2012-02-01

    Photon-enhanced etching of SiNx:H films caused by the interaction between vacuum ultraviolet (VUV)/ultraviolet (UV) radiation and radicals in the fluorocarbon plasma was investigated by a technique with a novel sample setup of the pallet for plasma evaluation. The simultaneous injection of UV radiation and radicals causes a dramatic etch rate enhancement of SiNx:H films. Only UV radiation causes the film shrinkage of SiNx:H films owing to hydrogen desorption from the film. Capacitance-voltage characteristics of SiNx:H/Si substrates were studied before and after UV radiation. The interface trap density increased monotonically upon irradiating the UV photons with a wavelength of 248 nm. The estimated effective interface trap generation probability is 4.74 ×10-7 eV-1·photon-1. Therefore, the monitoring of the VUV/UV spectra during plasma processing and the understanding of its impact on the surface reaction, film damage and electrical performance of underlying devices are indispensable to fabricate advanced devices.

  16. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    NASA Technical Reports Server (NTRS)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  17. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  18. Possibility of reverse Monte Carlo modelling for hydrogenated amorphous Si deposited on reactive ion etched Si substrate

    NASA Astrophysics Data System (ADS)

    Kawahara, Toshio; Matsui, Yoshinori; Tagawa, Seiichi; Kawai, Tomoji; Matsumura, Hideki

    2007-08-01

    We examined the x-ray diffraction (XRD) patterns of hydrogenated amorphous Si (a-Si:H) and of crystalline Si (c-Si) substrate for high-Q measurements. A structural analysis of thin films on substrates is important for the development of real devices. A transmission geometry with high-energy x-rays was used for this investigation, together with very thin substrates, in an effort to reduce substrate signals. A small area of the substrate was etched using the reactive ion etching (RIE) plasma process to maintain free-standing structures, and a-Si was deposited using catalytic chemical vapour deposition techniques. The x-ray beam was focused on the processed area and a-Si diffraction using a thin Si layer was measured. Unlike a-Si:H films on substrates without etching, we succeeded in detecting amorphous signals from samples deposited on the processed substrate. Application of reverse Monte Carlo (RMC) modelling using these data and subtracting Si substrate peaks was investigated. Direct subtraction and MCGR program (Pusztai and McGreevy 1997 Physica B 234-236 357-8) normalization for the ratio estimation between c-Si and a-Si:H structure factors was employed. MCGR normalization was found to improve subtraction of the c-Si peaks and the first peak at r = 2.3 in the pair distribution function g(r) could be calculated.

  19. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  20. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

    SciTech Connect

    Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R.; Shul, R.J.; McLane, G.F.; Ren, F.

    1996-04-01

    Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

  1. Ab initio calculations on etching of graphite and diamond surfaces by atomic hydrogen

    SciTech Connect

    Kanai, C.; Watanabe, K.; Takakuwa, Y.

    2001-06-15

    Etching of graphite and hydrogenated diamond C(100) 2{times}1 surfaces by irradiating atomic hydrogen, which is one of the key reactions to promote epitaxial diamond growth by chemical vapor deposition, has been investigated by ab initio pseudopotential calculations. We demonstrate the reaction pathways and determine the activation energies for breaking C-C bonds on the surfaces by irradiating hydrogen atoms. The activation energy for C-C bond breaking on graphite is found to be only one-half of that on the hydrogenated diamond surface. This indicates that graphite, which is a typical nondiamond phase unnecessarily generated on the diamond surface during epitaxial growth, can be selectively eliminated by atomic hydrogen, resulting in methane desorption. Our result supports the growth rate enhancement in diamond epitaxy observed in a recent experiment by gas-source molecular beam epitaxy under hydrogen beam irradiation.

  2. Silicon Wafer Surface-Temperature Monitoring System for Plasma Etching Process

    NASA Astrophysics Data System (ADS)

    Yamada, Y.; Ishii, J.; Nakaoka, A.; Mizojiri, Y.

    2011-08-01

    A thermoreflectance temperature measuring system was developed with the aim to realize monitoring of the silicon wafer surface temperature during plasma etching. The thermoreflectance detects variations in temperature through changes in optical reflectance. To overcome such difficulties as low sensitivity and limitation in installation space and position for in situ measurements, the differential thermoreflectance utilizing two orthogonal polarizations was introduced. Noise such as fluctuations in the incident beam intensity or changes of loss in the optical path would affect both polarizations equally and would not affect the measurement. The large angle of incidence of the beam allows measurement to be performed from outside the viewing ports of existing plasma etching process chambers through the gap between the plasma electrode and the silicon wafer. In this article, an off-line measurement result is presented, with results for bare wafers as well as for wafers with metal depositions. A prototype system developed for tests in plasma etching facilities in a production line is described.

  3. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    SciTech Connect

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  4. Halogen-based plasma etching of novel field-effect transistor gate materials

    NASA Astrophysics Data System (ADS)

    Kiehlbaugh, Kasi Michelle

    Vacuum Beam Studies of Ruthenium Etching. Ru is known to have two volatile oxidation products, RuO3 and RuO4, although the etch rate is negligible when Ru is exposed to an O2 plasma discharge. The introduction of a small amount of additive gas, such as Cl2, has been shown to increase the Ru etch rate sixfold. The reason for this dramatic shift in etching is poorly understood, primarily because it is difficult if not impossible to study plasma-surface interactions in a plasma environment. The unique capabilities of the beam system have made it possible to explore the mechanism of Ru etching. It has been shown that under 500 eV Ar+ ion bombardment, the addition of O radicals lowered the etch rate by a factor of 2.5. This process was relatively insensitive to temperature over the range studied (room temperature to ˜175°C). It was also shown that O radicals alone spontaneously etched Ru at a very slow rate over the entire temperature range. Statistical Analysis of Polysilicon Etching and Gate Profile Evolution in Dual-Doped Polysilicon Gates. Polysilicon gate etching for the 90nm lithography node and below requires extremely precise control of the gate CD and profile. Generally speaking, the current requirement for Gate CD control is that the 3 sigma should less than ˜5nm for all gates, including across the chip, across the wafer, wafer-to-wafer, lot-to-lot, and tool-to-tool variations. Similarly, for gate sidewall angle control, the 3 sigma angle variation should be less than ˜1 degree, inclusive of all sources of variation. This is particularly challenging for technologies which employ dual-doped gates, since the chemistry and physics of the etching process induces a different profile evolution between gates with different doping. The goal of this project was to identify a parameter space where the differences in gate profile evolution across different polysilicon dopant types were minimized. Blanket etch rates and patterned wafers were used to determine the

  5. Correlation of plasma characteristics to etch rate and via sidewall angle in a deep reactive ion etch system using Langmuir probe and optical emission spectroscopy

    SciTech Connect

    Koirala, S. P.; Awaah, I.; Burkett, S. L.; Gordon, M. H.

    2011-01-15

    A Langmuir probe and optical emission spectroscopy were used in a deep reactive ion etch system to correlate plasma parameters (atomic fluorine and argon emission, electron density, ion density, and electron average energy) with the etch rate and via sidewall angle. All data were obtained for coil powers ranging from 200 to 800 W, platen powers ranging from 7 to 16 W, and pressure ranging from 3.8 to 62 mTorr with constant SF{sub 6} and Ar flow rates of 112 and 18 SCCM (SCCM denotes cubic centimeter per minute at STP), respectively. Results indicate that there is a correlation with etch rate for all plasma parameters except for argon emission. For argon emission, the etch rate exhibits a double-valued relation where the etch rate can either increase or decrease with increasing argon emission intensity due to changes in pressure which affect the energy coupling efficiency. As expected, the etch rate increases for measured increases in fluorine emission, electron density, and ion density. The etch rate, however, decreases with increasing average electron energy due to collision processes. In contrast, no correlation is observed between any of the measured plasma parameters with sidewall angle. The last result is consistent with the idea that sidewall angle is primarily controlled by the passivation cycle as opposed to the etching cycle, where all the authors' data were obtained.

  6. Collector optic cleaning by in-situ hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Elg, Daniel T.; Panici, Gianluca A.; Srivastava, Shailendra N.; Ruzic, D. N.

    2015-03-01

    Extreme ultraviolet (EUV) lithography sources produce EUV photons by means of a hot, dense, highly-ionized Sn plasma. This plasma expels high-energy Sn ions and neutrals, which deposit on the collector optic used to focus the EUV light. This Sn deposition lowers the reflectivity of the collector optic, necessitating downtime for collector cleaning and replacement. A method is being developed to clean the collector with an in-situ hydrogen plasma, which provides hydrogen radicals that etch the Sn by forming gaseous SnH4. This method has the potential to significantly reduce collector-related source downtime. EUV reflectivity restoration and Sn cleaning have been demonstrated on multilayer mirror samples attached to a Sn-coated 300mm-diameter steel dummy collector driven at 300W RF power with 500sccm H2 and a pressure of 260mTorr. Use of the in-situ cleaning method is also being studied at industriallyapplicable high pressure (1.3 Torr). Plasma creation across the dummy collector surface has been demonstrated at 1.3 Torr with 1000sccm H2 flow, and etch rates have been measured. Additionally, etching has been demonstrated at higher flow rates up to 3200sccm. A catalytic probe has been used to measure radical density at various pressures and flows. The results lend further credence to the hypothesis that Sn removal is limited not by radical creation but by the removal of SnH4 from the plasma. Additionally, further progress has been made in an attempt to model the physical processes behind Sn removal.

  7. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    SciTech Connect

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  8. Study of organic polymer thin-film etching by plasma beam irradiation

    SciTech Connect

    Kurihara, Kazuaki; Egami, Akihiro; Nakamura, Moritaka

    2005-10-15

    We investigated the etching characteristics of three kinds of methacrylate polymer films which have the same main chain with a different side chain using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate (PtBuMA), polybenzylmethacrylate (PBMA), and polycyclohexylmethacrylate (PCHMA). The etch yield (EY) of PtBuMA was higher than those of the others in the case of N{sub 2} plasma beam. The EYs of PBMA and PCHMA increased with an increase in the ion energy of up to 330 eV and saturated at over 330 eV. On the other hand, that of PtBuMA was almost constant at the ion energy higher than 130 eV. It was supposed that nitridation of the polymer plays an important role in the enhancement of etching by N{sub 2} plasma. In the case of Ar plasma, EY increased linearly with an increase in the square root of ion energy for every polymer. In the case of H{sub 2} plasmas, EY scarcely depended on the ion energy regardless of the polymers. Etching behaviors with Ar and H{sub 2} plasma irradiation showed physical sputtering and chemical sputtering, respectively. The order of the magnitude of EY was PtBuMA, PCHMA, and PBMA for all of the Ar, H{sub 2}, and N{sub 2} plasmas.

  9. Environmentally harmonized CF{sub 3}I plasma for low-damage and highly selective low-k etching

    SciTech Connect

    Samukawa, Seiji; Ichihashi, Yoshinari; Ohtake, Hiroto; Soda, Eiichi; Saito, Shuichi

    2008-03-01

    Low-damage, high-rate, and highly selective low-k etching can be simultaneously satisfied using a plasma with an environmentally harmonized gas chemistry (CF{sub 3}I). Such a CF{sub 3}I plasma can drastically reduce the irradiation damage by ultraviolet (UV) photons during low-k etching, because the intensity of UV in CF{sub 3}I plasma is much lower than that in conventional CF{sub 4} plasma. The etching selectivity of SiOCH to a photoresist can be drastically improved by using CF{sub 3}I plasma because of reducing F radical generation. In addition, pulse-time-modulated CF{sub 3}I plasma causes a drastic increase in the etching rate because a large amount of negative ions can be generated. These results show that CF{sub 3}I plasma is a very promising candidate for low-damage and highly selective low-k etching.

  10. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C2H2/NH3 and C2H2/H2 with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH3 and H2) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals).

  11. III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Donovan, S.M.; Hahn, Y-B.; Han, J.; Hays, D.C.; MacKenzie, J.D.; Pearton, S.J.; Shul, R.J.

    1998-11-10

    A systematic study of the etch characteristics of GaN, AlN and InN has been performed with boron halides- (BI{sub 3} and BBr{sub 3}) and interhalogen- (ICl and IBr) based Inductively Coupled Plasmas. Maximum etch selectivities of -100:1 were achieved for InN over both GaN and AlN in the BI{sub 3} mixtures due to the relatively high volatility of the InN etch products and the lower bond strength of InN. Maximum selectivies of- 14 for InN over GaN and >25 for InN over AlN were obtained with ICl and IBr chemistries. The etched surface morphologies of GaN in these four mixtures are similar or better than those of the control sample.

  12. Insight into hydrogenation of graphene: Effect of hydrogen plasma chemistry

    SciTech Connect

    Felten, A.; Nittler, L.; Pireaux, J.-J.; McManus, D.; Rice, C.; Casiraghi, C.

    2014-11-03

    Plasma hydrogenation of graphene has been proposed as a tool to modify the properties of graphene. However, hydrogen plasma is a complex system and controlled hydrogenation of graphene suffers from a lack of understanding of the plasma chemistry. Here, we correlate the modifications induced on monolayer graphene studied by Raman spectroscopy with the hydrogen ions energy distributions obtained by mass spectrometry. We measure the energy distribution of H{sup +}, H{sub 2}{sup +}, and H{sub 3}{sup +} ions for different plasma conditions showing that their energy strongly depends on the sample position, pressure, and plasma power and can reach values as high as 45 eV. Based on these measurements, we speculate that under specific plasma parameters, protons should possess enough energy to penetrate the graphene sheet. Therefore, a graphene membrane could become, under certain conditions, transparent to both protons and electrons.

  13. Thermodynamic properties of hydrogen-helium plasmas

    NASA Technical Reports Server (NTRS)

    Nelson, H. F.

    1971-01-01

    The thermodynamic properties of an atomic hydrogen-helium plasma are calculated and tabulated for temperatures from 10,000 to 100,000 K as a function of the mass fraction ratio of atomic hydrogen. The tabulation is for densities from 10 to the minus 10th power to 10 to the minus 6th power gm/cu cm and for hydrogen mass fraction ratios of 0, 0.333, 0.600, 0.800, and 1.0, which correspond to pure helium, 50 percent hydrogen per unit volume, 75 percent hydrogen per unit volume, 89 percent hydrogen per unit volume, and pure hydrogen plasmas, respectively. From an appended computer program, calculations can be made at other densities and mass fractions. The program output agrees well with previous thermodynamic property calculations for limiting cases of pure hydrogen and pure helium plasmas.

  14. Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

  15. High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

    NASA Astrophysics Data System (ADS)

    Song, Junqiang; Shi, Xun; Chen, Lidong

    2014-10-01

    Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

  16. Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

    NASA Astrophysics Data System (ADS)

    Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

    2010-09-01

    Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

  17. Measurement of desorbed products during organic polymer thin film etching by plasma beam irradiation

    SciTech Connect

    Kurihara, Kazuaki; Karahashi, Kazuhiro; Egami, Akihiro; Nakamura, Moritaka

    2006-11-15

    The authors investigated the etching characteristics of three kinds of methacrylate polymer films, which have the same main chain but with different side chains, using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate, polybenzylmethacrylate, and polycyclohexylmethacrylate. The major desorbed products during nitrogen plasma beam etching were found to be HCN and C{sub 2}N{sub 2} for all methacrylate polymer films. The desorbed products originating from the polymer structure, namely, the main chain and the side chain, were hardly observed. The energy distributions of desorbed products were mainly composed of Maxwell-Boltzmann distribution with a small component of collision cascade distribution for all three polymers and were slightly dependent on the ion energy. It is concluded that chemical sputtering, which can be defined as the production of weakly bound species by ion bombardment, followed by thermal desorption, is the significant ion induced mechanism of organic polymer etching.

  18. Microwave Plasma Hydrogen Recovery System

    NASA Technical Reports Server (NTRS)

    Atwater, James; Wheeler, Richard, Jr.; Dahl, Roger; Hadley, Neal

    2010-01-01

    A microwave plasma reactor was developed for the recovery of hydrogen contained within waste methane produced by Carbon Dioxide Reduction Assembly (CRA), which reclaims oxygen from CO2. Since half of the H2 reductant used by the CRA is lost as CH4, the ability to reclaim this valuable resource will simplify supply logistics for longterm manned missions. Microwave plasmas provide an extreme thermal environment within a very small and precisely controlled region of space, resulting in very high energy densities at low overall power, and thus can drive high-temperature reactions using equipment that is smaller, lighter, and less power-consuming than traditional fixed-bed and fluidized-bed catalytic reactors. The high energy density provides an economical means to conduct endothermic reactions that become thermodynamically favorable only at very high temperatures. Microwave plasma methods were developed for the effective recovery of H2 using two primary reaction schemes: (1) methane pyrolysis to H2 and solid-phase carbon, and (2) methane oligomerization to H2 and acetylene. While the carbon problem is substantially reduced using plasma methods, it is not completely eliminated. For this reason, advanced methods were developed to promote CH4 oligomerization, which recovers a maximum of 75 percent of the H2 content of methane in a single reactor pass, and virtually eliminates the carbon problem. These methods were embodied in a prototype H2 recovery system capable of sustained high-efficiency operation. NASA can incorporate the innovation into flight hardware systems for deployment in support of future long-duration exploration objectives such as a Space Station retrofit, Lunar outpost, Mars transit, or Mars base. The primary application will be for the recovery of hydrogen lost in the Sabatier process for CO2 reduction to produce water in Exploration Life Support systems. Secondarily, this process may also be used in conjunction with a Sabatier reactor employed to

  19. Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

    SciTech Connect

    Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

    2012-09-15

    The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate bias reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl{sub x} (x = 1 - 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex 'recycling' process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl{sub 3} sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.

  20. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms

    SciTech Connect

    Martin, Ryan M.; Blom, Hans-Olof; Chang, Jane P.

    2009-03-15

    The mechanism for ion-enhanced chemical etching of hafnium aluminate thin films in Cl{sub 2}/BCl{sub 3} plasmas was investigated in this work, specifically how the film composition, ion energy, and plasma chemistry determine their etch rates. Several compositions of Hf{sub 1-x}Al{sub x}O{sub y} thin films ranging from pure HfO{sub 2} to pure Al{sub 2}O{sub 3} were etched in BCl{sub 3}/Cl{sub 2} plasmas and their etch rates were found to scale with {radical}(E{sub ion}) in both Cl{sub 2} and BCl{sub 3} plasmas. In Cl{sub 2} plasmas, a transition point was observed around 50 eV, where the etch rate was significantly enhanced while the linear dependence to {radical}(E{sub ion}) was maintained, corresponding to a change in the removal of fully chlorinated to less chlorinated reaction products. In BCl{sub 3} plasma, deposition dominates at ion energies below 50 eV, while etching occurs above that energy with an etch rate of three to seven times that in Cl{sub 2}. The faster etch rate in BCl{sub 3} was attributed to a change in the dominant ion from Cl{sub 2}{sup +} in Cl{sub 2} plasma to BCl{sub 2}{sup +} in BCl{sub 3}, which facilitated the formation of more volatile etch products and their removal. The surface chlorination (0-3 at. %) was enhanced with increasing ion energy while the amount of boron on the surface increases with decreasing ion energy, highlighting the effect of different plasma chemistries on the etch rates, etch product formation, and surface termination.

  1. Plasma chemical modification of track-etched membrane surface layer for improvement of their biomedical properties

    NASA Astrophysics Data System (ADS)

    Kravets, Liubov I.; Ryazantseva, Tatyana V.

    2013-12-01

    The morphological and clinical studies of poly(ethylene terephthalate) track-etched membrane modified by plasma of non-polymerizing gases as drainage materials for antiglaucomatous operations were performed. It was demonstrated their compatibility with eye tissues. Moreover, it was shown that a new drainage has a good lasting hypotensive effect and can be used as operation for refractory glaucoma surgery.

  2. Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications

    NASA Astrophysics Data System (ADS)

    Ekinci, Huseyin; Kuryatkov, Vladimir V.; Mauch, Daniel L.; Dickens, James C.; Nikishin, Sergey A.

    2015-05-01

    Photoconductive semiconductor switches (PCSS) fabricated on high-purity semi-insulating 4H-SiC substrates (000) are capable of switching high currents in compact packages with long device lifetimes. A heavily doped n-type SiC epitaxial layer of appropriate thickness is required to form low-resistance ohmic contacts with these devices. In addition, to enhance the performance of the PCSSs, the SiC surface between the ohmic contacts must be extremely smooth. We report a chlorine-based, inductively coupled plasma reactive ion-etching process yielding n-type SiC epitaxial layers with the required smoothness. The rate of etching and post-etching surface morphology were dependent on plasma conditions. We found that the surface smoothness of epitaxial layers can be improved by including BCl3 in the argon-chlorine mixture. The optimum etching process yielded very smooth surfaces (˜0.3 nm RMS) at a relatively high rate of etching of ˜220 nm/min. This new fabrication approach significantly reduced the on-state resistance of the PCSS device and improved its durability of operation.

  3. Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge

    SciTech Connect

    Sung, Dougyong; Woo, Jehun; Lim, Kyungchun; Kim, Kyungsun; Volynets, Vladimir; Kim, Gon-Ho

    2009-07-15

    The influence of controlled phase shift between very high frequency (100 MHz) voltages applied to the powered electrodes on the plasma uniformity and etch rate was studied in a capacitive triode-type reactor. Radial profiles of plasma optical emission were measured as a function of the phase shift in process (C{sub 4}F{sub 8}/O{sub 2}/Ar) plasma with the low frequency bias power both turned off and on. Radial profiles of KrF photoresist etch rate over a 300 mm wafer were obtained in the same conditions (with the bias power turned on). Besides, plasma density at the wafer center and edge was measured versus the phase shift in pure Ar plasma. It occurred that all measured characteristics strongly depend on the phase shift and correlate with each other. It has been shown that the phase-shift control can considerably improve both the plasma and etch-rate uniformity in very high-frequency capacitive reactors.

  4. Controlling the relative rates of adlayer formation and removal during etching in inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Fuller, Nicholas Colvin Masi

    Laser desorption (LD) of the adlayer coupled with laser induced fluorescence (LIF) and plasma induced emission (PIE) of desorbed adsorbates is used to investigate the relative rates of chlorination and sputtering during the etching of Si in inductively coupled Cl2-Ar plasmas. Such an analysis is a two-fold process: surface analysis and plasma characterization. Surface analysis of Si etching using LD-LIF and LD-PIE techniques combined with etch rate measurements have revealed that the coverage of SiCl2 and etch rate increases and coverage of Si decreases abruptly for a chlorine fraction of 75% and ion energy of 80 eV. The precise Cl2 fraction for which these abrupt changes occur increases with an increase in ion energy. These changes may be caused by local chemisorption-induced reconstruction of Si <100>. Furthermore, the chlorination and sputtering rates are increased by ˜ an order of magnitude as the plasma is changed from Ar-dominant to Cl-dominant. Characterization of the plasma included determination of the dominant ion in Cl2 plasmas using LIF and a Langmuir probe and measurement of the absolute densities of Cl2, Cl, Cl+, and At + in Cl2-Ar discharges using optical emission actinometry. These studies reveal that Cl+ is the dominant positive ion in the H-mode and the dissociation of Cl2 to Cl increases with an increase in Ar fraction due to an increase in electron temperature. Furthermore, for powers exceeding 600 W, the neutral to ion flux ratio is strongly dependent on Cl2 fraction and is attributed mostly to the decrease in Cl density. Such dependence of the flux ratio on Cl2 fraction is significant in controlling chlorination and sputtering rates not only for Si etching, but for etching other key technological materials. ICP O2 discharges were also studied for low-kappa polymeric etch applications. These studies reveal that the electron temperature is weakly dependent on rf power and O2 dissociation is low (˜2%) at the maximum rf power density of 5.7 Wcm

  5. Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

    PubMed

    Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

    2014-07-14

    We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

  6. Parametric study of compound semiconductor etching utilizing inductively coupled plasma source

    SciTech Connect

    Constantine, C.; Johnson, D.; Barratt, C.

    1996-07-01

    Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.

  7. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    PubMed Central

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  8. Fast and smooth etching of indium tin oxides in BCl{sub 3}/Cl{sub 2} inductively coupled plasmas

    SciTech Connect

    Andagana, H. B.; Cao, X. A.

    2010-03-15

    The etching characteristics of evaporation-deposited indium tin oxide (ITO) films in BCl{sub 3}/Cl{sub 2} inductively coupled plasmas have been studied. High etch rates >200 nm/min were obtained at large BCl{sub 3}/Cl{sub 2} gas flow ratios and high rf chuck powers, suggesting that the etching process is limited by sputter desorption of InCl{sub x} and SnCl{sub x} compounds. The addition of a small amount of CF{sub 4}, which acts as reducing agent, increased the etch rate by 30% and resulted in very smooth etched surfaces. It has also been found that the material crystallinity has a pronounced influence on ITO etch rate. ITO films annealed at 500 deg. C exhibited the maximum etch resistance.

  9. Etching of UO{sub 2} in NF{sub 3} RF Plasma Glow Discharge

    SciTech Connect

    John M. Veilleux

    1999-08-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO{sub 2} were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO{sub 2} from stainless steel substrates. Experiments were conducted using NF{sub 3} gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Depleted UO{sub 2} samples each containing 129.4 Bq were prepared from 100 microliter solutions of uranyl nitrate hexahydrate solution. The amorphous UO{sub 2} in the samples had a relatively low density of 4.8 gm/cm{sub 3}. Counting of the depleted UO{sub 2} on the substrate following plasma immersion was performed using liquid scintillation counting with alpha/beta discrimination due to the presence of confounding beta emitting daughter products, {sup 234}Th and {sup 234}Pa. The alpha emission peak from each sample was integrated using a gaussian and first order polynomial fit to improve quantification. The uncertainties in the experimental measurement of the etched material were estimated at about {+-} 2%. Results demonstrated that UO{sub 2} can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO{sub 2} in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 {micro}m/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO{sub 2} etching was also noted below 50 W in which etching increased up to a maximum pressure, {approximately}23 Pa, then decreased with further increases in pressure.

  10. Investigation of Asymmetries in Inductively Coupled Plasma Etching Reactors Using a 3-Dimensional Hybrid Model

    NASA Astrophysics Data System (ADS)

    Kushner, Mark J.; Grapperhaus, Michael J.

    1996-10-01

    Inductively Coupled Plasma (ICP) reactors have the potential for scaling to large area substrates while maintaining azimuthal symmetry or side-to-side uniformity across the wafer. Asymmetric etch properties in these devices have been attributed to transmission line properties of the coil, internal structures (such as wafer clamps) and non-uniform gas injection or pumping. To investigate the origins of asymmetric etch properties, a 3-dimensional hybrid model has been developed. The hybrid model contains electromagnetic, electric circuit, electron energy equation, and fluid modules. Continuity and momentum equations are solved in the fluid module along with Poisson's equation. We will discuss results for ion and radical flux uniformity to the substrate while varying the transmission line characteristics of the coil, symmetry of gas inlets/pumping, and internal structures. Comparisons will be made to expermental measurements of etch rates. ^*Work supported by SRC, NSF, ARPA/AFOSR and LAM Research.

  11. On the interest of carbon-coated plasma reactor for advanced gate stack etching processes

    SciTech Connect

    Ramos, R.; Cunge, G.; Joubert, O.

    2007-03-15

    In integrated circuit fabrication the most wide spread strategy to achieve acceptable wafer-to-wafer reproducibility of the gate stack etching process is to dry-clean the plasma reactor walls between each wafer processed. However, inherent exposure of the reactor walls to fluorine-based plasma leads to formation and accumulation of nonvolatile fluoride residues (such as AlF{sub x}) on reactor wall surfaces, which in turn leads to process drifts and metallic contamination of wafers. To prevent this while keeping an Al{sub 2}O{sub 3} reactor wall material, a coating strategy must be used, in which the reactor is coated by a protective layer between wafers. It was shown recently that deposition of carbon-rich coating on the reactor walls allows improvements of process reproducibility and reactor wall protection. The authors show that this strategy results in a higher ion-to-neutral flux ratio to the wafer when compared to other strategies (clean or SiOCl{sub x}-coated reactors) because the carbon walls load reactive radical densities while keeping the same ion current. As a result, the etching rates are generally smaller in a carbon-coated reactor, but a highly anisotropic etching profile can be achieved in silicon and metal gates, whose etching is strongly ion assisted. Furthermore, thanks to the low density of Cl atoms in the carbon-coated reactor, silicon etching can be achieved almost without sidewall passivation layers, allowing fine critical dimension control to be achieved. In addition, it is shown that although the O atom density is also smaller in the carbon-coated reactor, the selectivity toward ultrathin gate oxides is not reduced dramatically. Furthermore, during metal gate etching over high-k dielectric, the low level of parasitic oxygen in the carbon-coated reactor also allows one to minimize bulk silicon reoxidation through HfO{sub 2} high-k gate dielectric. It is then shown that the BCl{sub 3} etching process of the HfO{sub 2} high-k material is highly

  12. Etching characteristics of high-k dielectric HfO{sub 2} thin films in inductively coupled fluorocarbon plasmas

    SciTech Connect

    Takahashi, Kazuo; Ono, Kouichi; Setsuhara, Yuichi

    2005-11-15

    Inductively coupled fluorocarbon (CF{sub 4}/Ar and C{sub 4}F{sub 8}/Ar) plasmas were used to etch HfO{sub 2}, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO{sub 2} in CF{sub 4}/Ar plasmas exceeded those in C{sub 4}F{sub 8}/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO{sub 2} can be chemically etched by fluorine-containing species. In C{sub 4}F{sub 8}/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO{sub 2} increased with increasing bias power. The etch rate of Si, however, decreased with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO{sub 2}/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO{sub 2}/Si selectivity in C{sub 4}F{sub 8}/Ar plasmas.

  13. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  14. The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate.

    PubMed

    Chang, Chun-Ming; Shiao, Ming-Hua; Yang, Chin-Tien; Cheng, Chung-Ta; Hsueh, Wen-Jeng

    2014-10-01

    In this study, patterned sapphire substrates are fabricated using nanosphere lithography (NSL) and inductively-coupled-plasma reactive ion etching (ICP-RIE). Polystyrene nanospheres of approximately 600 nm diameter are self-assembled on c-plane sapphire substrates by spin-coating. The diameter of the polystyrene nanospheres is modified to adjust the etching mask pitch cycle using oxygen plasma in the ICP-RIE system. A nickel thin film mask of 100 nm thickness is deposited by electron-beam evaporation on a substrate covered with treated nanospheres. The sapphire substrate is then etched in an inductively coupled plasma system using BCl3/Ar gas, to fabricate a structure with a periodic sub-micron hole array with different sidewall intervals. The DC bias voltage, the sapphire etching rate, the surface roughness, are studied as a function of the ICP and the RF power. Different sub-micron hole arrays with spacing cycles of 89 nm, 139 nm and 167 nm are successfully fabricated on the sapphire substrate, using suitable etching parameters. PMID:25942926

  15. Fabrication of pyramidal corrugated quantum well infrared photodetector focal plane arrays by inductively coupled plasma etching with BCl/Ar

    NASA Astrophysics Data System (ADS)

    Sun, Jason; Choi, Kwong-Kit; Lee, Unchul

    2012-10-01

    We developed an optimized inductively coupled plasma etching process to produce gallium arsenide (GaAs) pyramidal corrugated quantum well infrared photodetector focal plane arrays (C-QWIP FPAs). A statistically designed experiment was performed to optimize the etching parameters. The resulting parameters are discussed in terms of the effect on the etching rate and profile. This process uses a small amount of mask corrosion and the control of the etching mask gap to give a 45 deg to 50 deg V-groove etching profile, which is independent of the crystal orientation of GaAs. In the etching development, scanning electron microscope was used to observe the surface morphology and the pattern profile. In addition, x-ray photoelectron spectroscopy was used to obtain the elemental composition and contamination of the etching surface. It is found that extremely small stoichiometric change and surface damage of the etching surface can be achieved while keeping a relatively high etching rate and ˜45 deg V-groove etching profile. This etching process is applied to the fabrication of pyramidal C-QWIP FPAs successfully, which are expected to have better performance than the regular prism-shaped C-QWIPs according to electromagnetic modeling.

  16. Atomic-layer soft plasma etching of MoS2

    PubMed Central

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  17. Atomic-layer soft plasma etching of MoS2.

    PubMed

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-27

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

  18. Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

    2002-01-01

    Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

  19. Atomic-layer soft plasma etching of MoS2.

    PubMed

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-01

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

  20. Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off

    NASA Astrophysics Data System (ADS)

    Rastogi, Vinayak; Beique, Genevieve; Sun, Lei; Cottle, Hongyun; Feurprier, Yannick; Metz, Andrew; Kumar, Kaushik; Labelle, Cathy; Arnold, John; Colburn, Matthew; Ranjan, Alok

    2016-03-01

    EUV based patterning is one of the frontrunner candidates enabling scaling for future technology nodes. However it poses the common challenges of `pattern roughness' and `etch resistance' aspect which are getting even more critical as we work on smaller dimension features. Continuous efforts are ongoing to improve resist materials and lithography process but the industry is slowly moving to introduce it at high volume manufacturing. Plasma Etch processes have the potential to improvise upon the incoming pattern roughness and provide improved LER/LWR downstream to expedite EUV progress. In this work we demonstrate the specific role of passivation control in the dualfrequency Capacitively Coupled Plasma (CCP) for EUV patterning process with regards to improving LER/LWR, resist selectivity and CD tunability for line/space patterns. We draw the implicit commonalities between different passivation chemistry and their effectiveness for roughness improvement. The effect of relative C:F and C:H ratio in feed gas on CFx and CHx plasma species and in turn the evolution of pattern roughness is drawn. Data that shows the role of plasma etch parameters impacting the key patterning metrics of CD, resist selectivity and LER/LWR is presented.

  1. Plasma heating power dissipation in low temperature hydrogen plasmas

    SciTech Connect

    Komppula, J. Tarvainen, O.

    2015-10-15

    A theoretical framework for power dissipation in low temperature plasmas in corona equilibrium is developed. The framework is based on fundamental conservation laws and reaction cross sections and is only weakly sensitive to plasma parameters, e.g., electron temperature and density. The theory is applied to low temperature atomic and molecular hydrogen laboratory plasmas for which the plasma heating power dissipation to photon emission, ionization, and chemical potential is calculated. The calculated photon emission is compared to recent experimental results.

  2. Plasma-induced-damage of GaAs during etching of refractory metal contacts

    SciTech Connect

    Shul, R.J.; Lovejoy, M.L.; Baca, A.G.; Zolper, J.C.; Rieger, D.J.; Hafich, M.J.; Corless, R.F.; Vartuli, C.R.

    1994-10-01

    The effect of plasma-induced-damage on the majority carrier transport properties of GaAs has been studied by monitoring changes in sheet resistance (R{sub s}) of thin conducting layers under various plasma conditions including etch conditions for refractory metal contacts. R{sub s} determined from transmission line measurements are used to evaluate plasma-induced-damage for electron cyclotron resonance (ECR) and reactive ion etch (RIE) conditions by varying the thickness of doped epitaxial layers. The authors speculate that plasma-induced-damage in the near surface region plays a major role in explaining the damage mechanism observed in this study. Very consistent trends have been observed where R{sub s} increases with increasing ECR and RIE dc-bias, increasing microwave power, and decreasing pressure, thus showing R{sub s} increases as either the ion energy or ion flux increases. The authors have also observed that R{sub s} is lower for samples exposed to the RIE than the ECR, possibly due to higher ion and electron densities generated in the ECR and higher pressures in the RIE. It has also been observed R{sub s} dependence on ECR plasma chemistry where, R{sub s} is lower in SF{sub 6}/Ar plasmas than Ar and N{sub 2} plasmas possibly related to interactions of F or S atoms with the GaAs surface. Moderate anneal temperatures (200 to 500{degrees}C) have shown significant R{sub s} recovery.

  3. Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications

    NASA Astrophysics Data System (ADS)

    Gul, Banat; Ahmad, Iftikhar; Zia, Gulfam; Aman-ur-Rehman

    2016-09-01

    HBr/Cl2 plasma discharge is investigated to study the etchant chemistry of this discharge by using the self-consistent fluid model. A comprehensive set of gas phase reactions (83 reactions) including primary processes such as excitation, dissociation, and ionization are considered in the model along with 24 species. Our findings illustrate that the densities of neutral species (i.e., Br, HCl, Cl, H, and H2) produced in the reactor are higher than charged species (i.e., Cl2+, Cl-, HBr+, and Cl+). Density profile of neutral and charged species followed bell shaped and double humped distributions, respectively. Increasing Cl2 fraction in the feedback gases (HBr/Cl2 from 90/10 to 10/90) promoted the production of Cl, Cl+, and Cl2+ in the plasma, indicating that chemical etching pathway may be preferred at high Cl-environment. These findings pave the way towards controlling/optimizing the Si-etching process.

  4. Effects of oxygen plasma etching on Sb2Te3 explored by torque detected quantum oscillations

    NASA Astrophysics Data System (ADS)

    Yan, Yuan; Heintze, Eric; Pracht, Uwe S.; Blankenhorn, Marian; Dressel, Martin

    2016-04-01

    De Haas-van Alphen measurements evidence that oxygen plasma etching strongly affects the properties of the three-dimensional topological insulator Sb2Te3. The quantum oscillations in magnetization down to low temperature (T ≥ 2 K) and high magnetic field (B ≤ 7 T) have been systematically investigated using a high-sensitive cantilever torque magnetometer. The effective mass and the oscillation frequency obtained from de Haas-van Alphen measurements first increase and then decrease as the oxygen plasma etching time increases from 0 to 12 min, corresponding to an up- and down-shift of the Dirac point. We establish the cantilever torque magnetometer as a powerful contactless tool to investigate the oxygen sensitivity of the surface state in topological insulators.

  5. Patterning of titanium oxide nanostructures by electron-beam lithography combined with plasma etching

    NASA Astrophysics Data System (ADS)

    Hotovy, I.; Kostic, I.; Nemec, P.; Predanocy, M.; Rehacek, V.

    2015-07-01

    Patterning of metal oxide nanostructures with precisely controlled geometries and spacings can play an important role in the improvement of sensors for gas detection. Titanium oxide thin films were deposited on oxidized silicon substrates by reactive magnetron sputtering at room temperature. Patterning of TiO2 nanostructures was conducted by electron beam lithography combined with plasma etching. It was found that for 120 nm-thick TiO2 nanostructure formation, HSQ e-beam resists and Cr films prove to be suitable mask materials. Experimental results showed that the size of TiO2 nanostructures depends mainly on the e-beam lithography process and they can be controlled by the design geometry and the exposure dose. TiO2 nanostructures with a minimal diameter of 70 nm and spacing of 200 nm were successfully fabricated by ICP etching in CF4/Ar plasma through negative e-beam resist HSQ.

  6. Tailoring the properties of asymmetric cellulose acetate membranes by gas plasma etching.

    PubMed

    Olde Riekerink, M B; Engbers, G H M; Wessling, M; Feijen, J

    2002-01-15

    Cellulose triacetate (CTA) ultrafilters and cellulose acetate blend (CAB) desalination membranes were treated with a radiofrequency gas plasma (tetrafluoromethane (CF(4)) or carbon dioxide (CO(2)), 47-49 W, 0.04-0.08 mbar). Treatment times were varied between 15 s and 120 min. The plasma-treated top layer of the membranes was characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, and contact angle measurements to obtain information about surface structure, chemistry, and wettability, respectively. The membrane properties (e.g., permeability, selectivity, fouling) were studied by waterflux measurements, molecular weight cutoff measurements, and fouling experiments with bovine serum albumin. CO(2) plasma treatment resulted in gradual etching of the membrane's dense top layer. Permeation and selectivity changed significantly for treatment times of 0-15 min for CTA and 5-60 min for CAB membranes. Moreover, CTA membranes were hydrophilized during CO(2) plasma treatment whereas CF(4) plasma treatment led to hydrophobic surfaces due to strong fluorination of the top layer. This study shows that gas plasma etching can tailor the properties of asymmetric cellulose acetate membranes by simultaneously modifying the chemistry and structure of the top layer. The low fouling properties of CTA membranes were thereby largely maintained.

  7. The chemistry screening for ultra low-k dielectrics plasma etching

    NASA Astrophysics Data System (ADS)

    Zotovich, A.; Krishtab, M.; Lazzarino, F.; Baklanov, M. R.

    2014-12-01

    Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k<2.5 and based on mixture of C4F8 and CF4 with N2, O2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF4 with CH2F2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM.

  8. Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching

    SciTech Connect

    Kokkoris, George; Boudouvis, Andreas G.; Gogolides, Evangelos

    2006-11-15

    An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for the case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear or nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied in SiO{sub 2} etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO{sub 2} holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated.

  9. Inductively Coupled Plasma Etching of III-Nitrides in Cl(2)/Xe,Cl(2)/Ar and Cl(2)/He

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Donovan, S.M.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1999-01-05

    The role of additive noble gases He, Ar and Xe to C&based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with C12/Xe, while the highest rates for AIN and GaN were obtained with C12/He. Efficient breaking of the 111-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of -80 for InN to GaN and InN to AIN were obtained.

  10. Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas

    SciTech Connect

    Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J.; Shul, R.J.; Han, J.

    1997-12-01

    Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

  11. Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Gray, David C.

    1992-01-01

    A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14

  12. Feature-scale model of Si etching in SF{sub 6} plasma and comparison with experiments

    SciTech Connect

    Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark; Cooperberg, David; Aydil, Eray S.

    2005-01-01

    We have developed a semiempirical feature scale model of Si etching in SF{sub 6} plasma, which incorporates the addition of small amounts of O in the discharge coming from the etching of the oxide mask and quartz window. The degrees of freedom in the model are reduced by using information from plasma diagnostics and previously published data to estimate the ion flux, the ion energy and angle distributions, and the relative F and O fluxes. Experimentally inaccessible parameters such as the F sticking coefficient, chemical etch rate constant, and the ion-enhanced etch yield are determined by matching simulated feature profiles with those obtained from carefully designed etching experiments. Excellent agreement between experiments and simulations is obtained.

  13. Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

    SciTech Connect

    Hirota, Kosa Itabashi, Naoshi; Tanaka, Junichi

    2014-11-01

    The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaning method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.

  14. 200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

    SciTech Connect

    Kubota, Tomohiro; Nukaga, Osamu; Ueki, Shinji; Sugiyama, Masakazu; Inamoto, Yoshimasa; Ohtake, Hiroto; Samukawa, Seiji

    2010-09-15

    The authors developed a neutral beam source consisting of a 200-mm-diameter inductively coupled plasma etcher and a graphite neutralization aperture plate based on the design of a neutral beam source that Samukawa et al. [Jpn. J. Appl. Phys., Part 2 40, L779 (2001)] developed. They measured flux and energy of neutral particles, ions, and photons using a silicon wafer with a thermocouple and a Faraday cup and calculated the neutralization efficiency. An Ar neutral beam flux of more than 1 mA/cm{sup 2} in equivalent current density and a neutralization efficiency of more than 99% were obtained. The spatial uniformity of the neutral beam flux was within {+-}6% within a 100 mm diameter. Silicon etching using a F{sub 2}-based neutral beam was done at an etch rate of about 47 nm/min, while Cl{sub 2}-based neutral beam realized completely no undercut. The uniformity of etch rate was less than {+-}5% within the area. The etch rate increased by applying bias power to the neutralization aperture plate, which shows that accelerated neutral beam was successfully obtained. These results indicate that the neutral beam source is scalable, making it possible to obtain a large-diameter and uniform neutral beam, which is inevitable for application to mass production.

  15. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  16. Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers

    SciTech Connect

    Stafford, L.; Lim, W. T.; Pearton, S. J.; Chicoine, M.; Gujrathi, S.; Schiettekatte, F.; Park, Jae-Soung; Song, Ju-Il; Heo, Young-Woo; Lee, Joon-Hyung; Kim, Jeong-Joo; Kravchenko, I. I.

    2007-07-15

    The etching characteristics of indium zinc oxide (IZO) films were investigated using a high-density plasma in Ar, Ar/Cl{sub 2}, and Ar/CH{sub 4}/H{sub 2} chemistries. The IZO layers were deposited by means of rf magnetron sputtering, in which the target composition and growth temperature were varied to selectively tune the film properties. X-ray diffraction, elastic recoil detection, and Rutherford backscattering spectroscopy were used to determine the crystallization quality, atomic density, and composition of the as-deposited IZO films. As the In/(In+Zn) composition ratio in the IZO layer increases, the etch yield in Ar and Ar/Cl{sub 2} plasmas remains fairly constant, indicating that the etching dynamic is essentially independent of the film properties. In sharp contrast, a strong increase of the IZO etch yield with the In/(In+Zn) fraction is observed in Ar/CH{sub 4}/H{sub 2} plasma due to the preferential desorption of the group-III etch products. By comparing these experimental data to the predictions of a simple rate model accounting for preferential desorption effects, it is concluded that the balance between etching and polymer deposition in the Ar/CH{sub 4}/H{sub 2} plasma plays an important role in the evolution of the IZO etch rate with the In concentration fraction.

  17. Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

    SciTech Connect

    Shin, Hyungjoo; Zhu Weiye; Liu Lei; Sridhar, Shyam; Donnelly, Vincent M.; Economou, Demetre J.; Lenox, Chet; Lii, Tom

    2013-05-15

    Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaN etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.

  18. Experimental investigation of hydrogen peroxide RF plasmas

    NASA Astrophysics Data System (ADS)

    Barni, R.; Decina, A.; Zanini, S.; D'Orazio, A.; Riccardi, C.

    2016-04-01

    This work reports a detailed experimental study of the plasma properties in low pressure RF discharges in hydrogen peroxide and a comparison with argon under the same operating conditions. H2O2 plasmas have been proposed for sterilization purposes. Electrical properties of the discharge were shown to be similar, as for the RF and DC voltages of the driving electrode. Bulk plasma volume remains stable, concentrated in an almost cylindrical region between the two facing electrodes. It was found that the electron temperature is almost uniform across the plasma and independent of the power level. This is higher than in argon discharges: T e  =  4.6  ±  0.9 eV versus T e  =  3.3  ±  1.1 eV. The plasma density increases almost linearly with the power level and a substantial negative ion component has been ruled out in hydrogen peroxide. Dissociation in the plasma gas phase was revealed by atomic hydrogen and hydroxyl radical emission in the discharge spectra. Emission from hydroxyl and atomic oxygen demonstrates that oxidizing radicals are produced by hydrogen peroxide discharges, revealing its usefulness for plasma processing other than sterilization, for instance to increase polymer film surface energy. On the other hand, argon could be considered as a candidate for the sterilization purposes due to the intense production of UV radiation.

  19. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  20. Dry etching of NiFe/Co and NiFe/Al-O/Co multilayers in an inductively coupled plasma of Cl{sub 2}/Ar mixture

    SciTech Connect

    Ra, H.-W.; Hahn, Y.B.; Song, K.S.; Park, M.H.; Hong, Y.K.

    2004-11-01

    Dry etching of NiFe/Co and NiFe/Al-O/Co multilayers was carried out in inductively coupled Cl{sub 2}/Ar plasmas. An ion-enhanced etch mechanism took a critical role for desorption of chlorine etch products. NiFe/Al-O/Co showed a faster etch rate than NiFe/Co at various etch conditions. Anisotropic and smooth features were obtained using a photoresist mask. Sidewall contamination with etch products was observed at a higher Cl{sub 2} concentration (>50%). Postetch cleaning of the etched samples in deionized water reduced the chlorine residues substantially.

  1. Hydrogen ionic plasma generated using Al plasma grid

    NASA Astrophysics Data System (ADS)

    Oohara, W.; Anegawa, N.; Egawa, M.; Kawata, K.; Kamikawa, T.

    2016-08-01

    Negative hydrogen ions are produced in the apertures of a plasma grid made of aluminum under the irradiation of positive ions, generating an ionic plasma consisting of positive and negative ions. The saturation current ratio obtained using a Langmuir probe reflects the existence ratio of electrons and is found to increase in connection with the diffusion of the ionic plasma. The local increment of the current ratio suggests the collapse of negative ions and the replacement of detached electrons.

  2. Fiber optic hydrogen sensor based on an etched Bragg grating coated with palladium.

    PubMed

    Coelho, L; de Almeida, J M M M; Santos, J L; Viegas, D

    2015-12-10

    A study of a sensor for hydrogen (H2) detection based on fiber Bragg gratings coated with palladium (Pd) with self-temperature compensation is presented. The cladding around the gratings was reduced down to 50 μm diameter by a chemical etching process. One of the gratings was left uncoated, and the other was coated with 150 nm of Pd. It was observed that palladium hydride has unstable behavior in environments with high humidity level. A simple solution to overcome this problem based on a Teflon tape is presented. The sensing device studied was able to respond to H2 concentrations in the range 0%-1% v/v at room temperature and atmospheric pressure, achieving sensitivities larger than 20 pm/% v/v. Considering H2 concentrations in nitrogen up to 1%, the performance of the sensing head was characterized for different thicknesses of Pd coating ranging from 50 to 200 nm.

  3. Fiber optic hydrogen sensor based on an etched Bragg grating coated with palladium.

    PubMed

    Coelho, L; de Almeida, J M M M; Santos, J L; Viegas, D

    2015-12-10

    A study of a sensor for hydrogen (H2) detection based on fiber Bragg gratings coated with palladium (Pd) with self-temperature compensation is presented. The cladding around the gratings was reduced down to 50 μm diameter by a chemical etching process. One of the gratings was left uncoated, and the other was coated with 150 nm of Pd. It was observed that palladium hydride has unstable behavior in environments with high humidity level. A simple solution to overcome this problem based on a Teflon tape is presented. The sensing device studied was able to respond to H2 concentrations in the range 0%-1% v/v at room temperature and atmospheric pressure, achieving sensitivities larger than 20 pm/% v/v. Considering H2 concentrations in nitrogen up to 1%, the performance of the sensing head was characterized for different thicknesses of Pd coating ranging from 50 to 200 nm. PMID:26836856

  4. Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes

    NASA Astrophysics Data System (ADS)

    Kato, Keisuke; Yasuda, Atsushi; Maeda, Shin-ichi; Uesugi, Takuji; Okada, Takeru; Wada, Akira; Samukawa, Seiji

    2013-03-01

    The serious problem associated with 193-nm lithography using an ArF photoresist is roughness formation of photoresist polymer during plasma processes. We have previously investigated the mechanism of roughness formation caused by plasma. The main deciding factor for roughness formation is a chemical reaction between photoresist polymer and reactive species from plasma. The lactone group in photoresist polymer is highly chemically reactive, and shrinking the lactone structure enhances the roughness formation. In this paper, on the basis of the mechanism of roughness formation, we propose a novel ArF photoresist polymer. The roughness formation was much more suppressed in the novel photoresist polymer during plasma etching process than in the previous type. In the novel photoresist polymer, chemical reactions were spread evenly on the photoresist film surface by adding the polar structure. As a result, decreases in the lactone group were inhibited, leading to suppressing ArF photoresist roughness.

  5. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  6. Etch characteristics of magnetic tunnel junction materials using bias pulsing in the CH4/N2O inductively coupled plasma.

    PubMed

    Jeon, Min Hwan; Youn, Ji Youn; Yang, Kyung Chae; Yun, Deok Hyun; Lee, Du Yeong; Shim, Tae Hun; Park, Jea Gun; Yeom, Geun Young

    2014-12-01

    The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively coupled plasma system. When CH4/N2O gas ratio was varied, at CH4/N2O gas ratio of 2:1, not only the highest etch rates but also the highest etch selectivity over W could be obtained. By increasing the substrate temperature, the linear increase of both the etch rates of MTJ materials and the etch selectivity over W could be obtained. The use of the rf pulse biasing improved the etch selectivity of the MTJ materials over hard mask such as W further. The surface roughness and residual thickness remaining on the etched surface of the CoFeB were also decreased by using rf pulse biasing and with the decrease of rf duty percentage. The improvement of etch characteristics by substrate heating and rf pulse biasing was possibly related to the formation of more stable and volatile etch compounds and the removal of chemically reacted compounds more easily on the etched CoFeB surface. Highly selective etching of MTJ materials over the hard mask could be obtained by using the rf pulse biasing of 30% of duty ratio and by increasing the substrate temperature to 200 degrees C in the CH4/N2O (2:1) plasmas. PMID:25971096

  7. Etching and structural changes in nitrogen plasma immersion ion implanted polystyrene films

    NASA Astrophysics Data System (ADS)

    Gan, B. K.; Bilek, M. M. M.; Kondyurin, A.; Mizuno, K.; McKenzie, D. R.

    2006-06-01

    Plasma immersion ion implantation (PIII), with nitrogen ions of energy 20 keV in the fluence range of 5 × 1014-2 × 1016 ions cm-2, is used to modify 100 nm thin films of polystyrene on silicon wafer substrates. Ellipsometry is used to study changes in thickness with etching and changes in optical constants. Two distinctly different etch rates are observed as the polymer structure is modified. FTIR spectroscopy data reveals the structural changes, including changes in aromatic and aliphatic groups and oxidation and carbonisation processes, occurring in the polystyrene film as a function of the ion fluence. The transformation to a dense amorphous carbon-like material was observed to progress through an intermediate structural form containing a high concentration of Cdbnd C and Cdbnd O bonds.

  8. CoSi{sub x} contact resistance after etching and ashing plasma exposure

    SciTech Connect

    Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya

    2009-07-15

    The authors investigated the contact resistance fluctuation caused by CoSi{sub x} damage in plasma etching and ashing processes. They found that CoSi{sub x} layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH{sub 3}F is used instead of CF{sub 4} during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H{sub 2}/N{sub 2} ashing process in which O{sub 2} was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi{sub x}. This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

  9. Actinometry of inductively coupled Cl{sub 2}/N{sub 2} plasmas for dry etching of GaAs

    SciTech Connect

    Brueckl, Tobias; Zull, Heribert

    2005-07-15

    Inductively coupled plasma dry etching of GaAs with Cl{sub 2}/N{sub 2}-containing plasmas and investigations of these plasmas with optical emission spectroscopy and actinometry are presented. The results of actinometry were revised to allow the comparison of relative ground-state densities at different pressures. The obtained relative ground-state densities of N{sub 2}, Cl{sub 2}, and Cl (I) are presented as functions of the process parameters [rf power, pressure, and Cl{sub 2}/(Cl{sub 2}+N{sub 2}) ratio]. Cl (I) relative ground-state densities were found to be linearly connected to the pressure and the Cl{sub 2}/(Cl{sub 2}+N{sub 2}) ratio. GaAs etch rates up to 3 {mu}m/min were obtained, while etch rates of the photoresist mask did not exceed 0.95 {mu}m/min. The impact of the rf power changes on the etch rates was negligible. Plotting the etch rates against the process parameters revealed a linear relationship between the etch rates and the pressure and between the etch rates and the Cl{sub 2}/(Cl{sub 2}+N{sub 2}) ratio. Therefore a correlation between the Cl (I) relative ground-state density measured in plasmas without wafer and GaAs and the photoresist mask etch rate was found. All GaAs dry etching examined in this investigation was found to take place in a reactant-limited regime with Cl (I) as the rate-limiting species.

  10. Hydrogen Strongly Coupled Plasma at Megabar Pressures

    NASA Astrophysics Data System (ADS)

    Fortov, Vladimir

    2011-06-01

    New experimental results on thermodynamics and electrical conductivity of shock and isoentropically compressed hydrogen and deuterium are presented. Strongly coupled plasmas in which pressures achieved 18 Mbar, Coulomb coupling parameter exceeded 450, electron degeneracy parameter came up to 290 were obtained with semi-spherical explosive-driven generators. Theoretical models for description of thermodynamics of warm dense hydrogen, the experiment and theory comparison for hydrogen strongly non-ideal plasmas under high energy density are presented. Experimental and theoretical problems in studying of warm dense hydrogen are discussed. Work done in collaboration with R.I. Il'kayev, M.A. Mochalov, M.V. Zhernokletov, A.L. Mikhailov, V.B. Mintsev, I.L. Iosilevskiy, and V.Ya. Ternovoi.

  11. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma

    SciTech Connect

    Zhang Guodong; Sun Weiguo; Xu Shuli; Zhao Hongyan; Su Hongyi; Wang Haizhen

    2009-07-15

    InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.

  12. Ohmic contacts to plasma etched n-Al{sub 0.58}Ga{sub 0.42}N

    SciTech Connect

    Miller, M. A.; Mohney, S. E.; Nikiforov, A.; Cargill, G. S. III; Bogart, K. H. A.

    2006-09-25

    Plasma etching is required to expose n-Al{sub x}Ga{sub 1-x}N layers for bottom-emitting ultraviolet light emitting diodes grown on sapphire. However, etching can increase the difficulty of forming Ohmic contacts. X-ray photoelectron spectroscopy and cathodoluminescence reveal how the semiconductor changes with etching and help explain why it becomes more difficult to form an Ohmic contact. A V/Al/V/Au metallization has been investigated for Ohmic contacts to n-Al{sub 0.58}Ga{sub 0.42}N etched with a BCl{sub 3}/Cl{sub 2}/Ar chemistry. Increased V thickness and higher annealing temperatures were required to obtain a specific contact resistance of 4.7x10{sup -4} {omega} cm{sup 2} for etched n-Al{sub 0.58}Ga{sub 0.42}N compared to optimized contacts on unetched films.

  13. Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma.

    PubMed

    Jeon, Min Hwan; Park, Jin Woo; Yun, Deok Hyun; Kim, Kyong Nam; Yeom, Geun Young

    2015-11-01

    The amorphous carbon layer (ACL), used as the hardmask for the etching of nanoscale semi-conductor materials, was etched using O2/CHF3 in addition to O2/N2 using pulsed dual-frequency capacitively coupled plasmas, and the effects of source power pulsing for different gas combinations on the characteristics of the plasmas and ACL etching were investigated. As the etch mask for ACL, a patterned SiON layer was used. The etch rates of ACL were decreased with the decrease of pulse duty percentage for both O2/N2 and O2/CHF3 due to decrease of the reactive radicals, such as F and O, with decreasing pulse duty percentage. In addition, at the same pulse duty percentage, the etch selectivity of ACL/SiON with O2/CHF3 was also significantly lower than that with O2/N2. However, the etch profiles of ACL with O2/CHF3 was more anisotropic and the etch profiles were further improved with decreasing the pulse duty percentage than those of ACL with O2/N2. The improved anisotropic etch profiles of ACL with decreasing pulse duty percentage for O2/CHF3 were believed to be related to the formation of a more effective passivation layer, such as a thick fluorocarbon layer, on the sidewall of the ACL during the etching with O2/CHF3, compared to the weak C-N passivation layer formed on the sidewall of ACL when using O2/N2. PMID:26726555

  14. Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process

    NASA Astrophysics Data System (ADS)

    Eddy, C. R., Jr.; Glembocki, O. J.; Leonhardt, D.; Shamamian, V. A.; Holm, R. T.; Thoms, B. D.; Butler, J. E.; Pang, S. W.

    1997-11-01

    In an effort to monitor ion-driven surface chemistry in the high density plasma etching of GaAs by Cl2/Ar plasma chemistries, we have applied mass spectrometry and careful substrate temperature control. Etch product chlorides were mass analyzed while the substrate temperature was monitored by optical bandgap thermometry and as pressure (neutral flux), microwave power (ion flux) and rf bias of the substrate (ion energy) were varied. By ensuring that the substrate temperature does not deviate during process variations, the changes in product mass peak intensities are a direct measure of changes in the ionassisted surface chemistry which promotes anisotropic etching. Experimental results show that ion-assisted surface chemistry is optimum when sufficient Cl and Cl+ are present in the incident plasma flux. These conditions are met at low coupled microwave powers (<300 W) and low total process pressures (<1.0 mTorr) for input gas mixtures of 25% Cl2 in Ar. Three mechanistic regions are identified for surface chemistry as a function of incident ion energy: 1) largely thermal chemistry for <50 eV; 2) ion-assisted chemistry for 50 200 eV; and 3) sputtering for >200 eV. Photoreflectance measurements of the surface Fermi level show significant damage for ion energies >75 eV. However, in situ and ex situ surface passivations can recover the surface Fermi level for up to 200 eV ion energies, in good correlation to the onset of sputtering and subsurface damage. Thus, anisotropic, low damage pattern transfer is possible for ion energies between 50 and 200 eV.

  15. Characterization of plasma etching induced interface states at Ti/p-SiGe Schottky contacts

    SciTech Connect

    Mamor, M.; Sellai, A.

    2008-07-15

    The authors have used current-voltage (I-V) data measured over a wide temperature range (100-300 K) complemented by deep level transient spectroscopy (DLTS) for the assessment of the defects introduced in Si{sub 0.95}Ge{sub 0.05} by argon plasma sputter etching. From DLTS, defect concentration depth profiling was extracted and revealed that the main defect introduced during argon plasma sputtering is located very close to the surface. I-V-T analysis shows that the electrical characteristics deviated from the ideal case and indicate the presence of interface states, resulting from the plasma etching induced surface states at Ti/Si{sub 0.95}Ge{sub 0.05} interface. The interface state density as well as its temperature dependence were obtained from forward bias I-V-T measurements by considering the bias dependence of effective barrier height {phi}{sub e}. It is found that interface states density is temperature dependent although weakly.

  16. Electron cyclotron resonance plasma etching of native TiO{sub 2} on TiN

    SciTech Connect

    Day, M.E.; Delfino, M.

    1996-01-01

    Thin-film polycrystalline Tin with an approximate 2 nm thick native TiO{sub 2} overlayer is bombarded with 50 to 200 eV Ar ions in an electron cyclotron resonance plasma. In situ X-ray photoelectron spectroscopy and static secondary ion mass spectrometry suggest complete removal of oxygen from the planar surface, independent of ion energy, with TiO{sub 2} remaining on the columnar grain boundaries. The TiN etching rate increases from 6 to 14 nm/min as the ion energy is raised from 100 to 200 eV. The TiN stoichiometry does not change with ion bombardment.

  17. Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

    NASA Astrophysics Data System (ADS)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2016-05-01

    We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

  18. Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

    NASA Astrophysics Data System (ADS)

    Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

    2015-03-01

    Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

  19. Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

    SciTech Connect

    Park, Y. R.; Ahn, J. H.; Kim, J. S.; Kwon, B. S.; Lee, N.-E.; Kang, H. Y.; Hwangbo, C. K.; Ahn, Jinho; Seo, Hwan Seok

    2010-07-15

    Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl{sub 2}/Ar gas flow ratio, dc self-bias voltage (V{sub dc}), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl{sub 2}/Ar plasma even with a very high overetch time.

  20. Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

    NASA Astrophysics Data System (ADS)

    Altamore, C.; Tringali, C.; Sparta', N.; Di Marco, S.; Grasso, A.; Ravesi, S.

    2010-02-01

    In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (105) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 101 Hz to 106 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl2/Ar chemistry. The relationship between the etch rate and the Cl2/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl2/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

  1. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    PubMed

    Yang, Jie; McArdle, Conor; Daniels, Stephen

    2014-01-01

    A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR) statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A), takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes. PMID:24755865

  2. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    PubMed

    Yang, Jie; McArdle, Conor; Daniels, Stephen

    2014-01-01

    A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR) statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A), takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  3. Plasma treatment of dentin surfaces for improving self-etching adhesive/dentin interface bonding

    PubMed Central

    Dong, Xiaoqing; Li, Hao; Chen, Meng; Wang, Yong; Yu, Qingsong

    2015-01-01

    This study is to evaluate plasma treatment effects on dentin surfaces for improving self-etching adhesive and dentin interface bonding. Extracted unerupted human third molars were used after crown removal to expose dentin. One half of each dentin surface was treated with atmospheric non-thermal argon plasmas, while another half was untreated and used as the same tooth control. Self-etching adhesive and universal resin composite was applied to the dentin surfaces as directed. After restoration, the adhesive-dentin bonding strength was evaluated by micro-tensile bonding strength (μTBS) test. Bonding strength data was analyzed using histograms and Welch’s t-test based on unequal variances. μTBS test results showed that, with plasma treatment, the average μTBS value increased to 69.7±11.5 MPa as compared with the 57.1±17.5 MPa obtained from the untreated controls. After 2 months immersion of the restored teeth in 37 °C phosphate buffered saline (PBS), the adhesive-dentin bonding strengths of the plasma-treated specimens slightly decreased from 69.7±11.5 MPa to 63.9±14.4 MPa, while the strengths of the untreated specimens reduced from 57.1±17.5 MPa to 48.9±14.6 MPa. Water contact angle measurement and scanning electron microscopy (SEM) examination verified that plasma treatment followed by water rewetting could partially open dentin tubules, which could enhance adhesive penetration to form thicker hybrid layer and longer resin tags and consequently improve the adhesive/dentin interface quality. PMID:26273561

  4. Effect of Cl{sub 2}/Ar gas mixing ratio on (Pb,Sr)TiO{sub 3} thin film etching behavior in inductively coupled plasma

    SciTech Connect

    Kim, Gwan-Ha; Kim, Chang-Il

    2006-07-15

    The development of anisotropic etching process for (Pb,Sr)TiO{sub 3} (PST) thin films is an important task to provide a small feature size and an accurate pattern transfer. Etching characteristics of PST thin films were investigated using inductively coupled plasma etching system as functions of Cl{sub 2}/Ar gas mixing ratio. The PST etch rate increased with the increase of chlorine radical and ion energy intensity. It was found that the increasing of Ar content in gas mixture lead to sufficient increasing of etch rate. The maximum etch rate of PST film is 56.2 nm/min at Cl{sub 2}/(Cl{sub 2}+Ar) of 0.2. It was proposed that the sputter etching is a dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

  5. Optimization of time on CF4/O2 etchant for inductive couple plasma reactive ion etching of TiO2 thin film

    NASA Astrophysics Data System (ADS)

    Adzhri, R.; Arshad, M. K. Md.; Fathil, M. F. M.; Hashim, U.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Foo, K. L.; M. Nuzaihan M., N.; Azman, A. H.; Zaki, M.

    2016-07-01

    In this work, we investigate the optimum etching of titanium dioxide (TiO2) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF4/O2 gases as plasma etchant with ratio of 3:1, three samples of TiO2 thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF4 gases with plasma enhancement by O2 gas able to break the oxide bond of TiO2 and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

  6. Plasma etching of benzocyclobutene in CF{sub 4}/O{sub 2} and SF{sub 6}/O{sub 2} plasmas

    SciTech Connect

    Kim, G.S.; Steinbruechel, C.

    2006-05-15

    Results for the reactive ion etching and patterning of benzocyclobutene (BCB) in CF{sub 4}/O{sub 2} and SF{sub 6}/O{sub 2} plasmas in a parallel-plate reactor with Langmuir probe and optical emission diagnostics are reported. The behavior of the O atom concentration [O] is similar in both plasmas, showing a strong maximum at a concentration of about 70% O{sub 2}. The F atom concentration [F] has a maximum at 30% O{sub 2} in CF{sub 4}/O{sub 2}, but the etch rate has a maximum at 70% O{sub 2}. In SF{sub 6}/O{sub 2}, by contrast, [F] and the etch rate increase continuously as the SF{sub 6} content is increased, and the highest etch rate is obtained with pure SF{sub 6}. Also, BCB etched in pure SF{sub 6} gives a very smooth surface. Patterning is performed using two different masks: a conventional hard mask with Si oxide as the top layer and a different type of mask with BCB itself as the top layer. The anisotropy of the etching is evaluated in terms of the plasma conditions and type of masking. The aspect ratio dependence of the etch rate is investigated up to an aspect ratio of 2.5. The results are discussed in terms of possible etch mechanisms and their differences between SF{sub 6}/O{sub 2} and C{sub 4}/O{sub 2} plasmas. A simple model is used to show how the latter mask reduces the dependence of the etch rate on the aspect ratio.

  7. Upgradation of bauxite by molecular hydrogen and hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Parhi, B. R.; Sahoo, S. K.; Mishra, S. C.; Bhoi, B.; Paramguru, R. K.; Satapathy, B. K.

    2016-10-01

    An approach was developed to upgrade the bauxite ore by molecular hydrogen and hydrogen plasma. A gibbsite-type bauxite sample was obtained from National Aluminium Company (NALCO), Odisha, India. The obtained sample was crushed and sieved (to 100 μm) prior to the chemical analysis and grain-size distribution study. The bauxite sample was calcined in the temperature range from 500 to 700°C for different time intervals to optimize the conditions for maximum moisture removal. This process was followed by the reduction of the calcined ore by molecular hydrogen and hydrogen plasma. Extraction of alumina from the reduced ore was carried out via acid leaching in chloride media for 2 h at 60°C. X-ray diffraction, scanning electron microscopy, thermogravimetry in conjunction with differential scanning calorimetry, and Fourier transform infrared spectroscopy were used to determine the physicochemical characteristics of the material before and after extraction. Alumina extracted from the reduced ore at the optimum calcination temperature of 700°C and the optimum calcination time of 4 h is found to be 90% pure.

  8. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    SciTech Connect

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C{sub 2}H{sub 2}/NH{sub 3} and C{sub 2}H{sub 2}/H{sub 2} with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH{sub 3} and H{sub 2}) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals)

  9. Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma

    SciTech Connect

    Kwon, Kwang-Ho; Efremov, Alexander; Ham, Yong-Hyun; Min, Nam Ki; Lee, Hyun Woo; Hong, Mun Pyo; Kim, Kwangsoo

    2010-01-15

    The investigations of etch characteristics and mechanisms for indium tin oxide (In{sub 2}O{sub 3}){sub 0.9}:(SnO{sub 2}){sub 0.1} (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%-100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species.

  10. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    SciTech Connect

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  11. Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas

    NASA Astrophysics Data System (ADS)

    Li, Juntao; Xia, Yangyang; Liu, Bo; Feng, Gaoming; Song, Zhitang; Gao, Dan; Xu, Zhen; Wang, Weiwei; Chan, Yipeng; Feng, Songlin

    2016-08-01

    Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge2Sb2Te5 (GST) in different halogen based plasmas (CF4, Cl2 and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF4. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  12. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  13. Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

    PubMed Central

    2014-01-01

    Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

  14. Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge

    NASA Astrophysics Data System (ADS)

    Park, Jae Beom; Kyung, Se Jin; Yeom, Geun Young

    2008-10-01

    Atmospheric pressure plasma etching of SiO2 was examined using a modified remote-type dielectric barrier discharge (DBD), called "pin-to-plate DBD." The effect of adding four gases CF4, C4F8, O2, and Ar to the base gas mixture containing N2 (60 slm) (slm denotes standard liters per minute)/NF3 (600 SCCM) (SCCM denotes cubic centimeter per minute at STP) on the SiO2 etch characteristics was investigated. The results showed that the SiO2 etch rate decreased continuously with increasing C4F8 (200-800 SCCM) addition, whereas the SiO2 etch rate increased with increasing CF4 (1-10 slm) addition up to 7 slm CF4. This increase in the SiO2 etch rate up to 7 slm CF4 was attributed to the effective removal of Si in SiO2 by F atoms through the removal of oxygen in SiO2 by carbon in the CFX in the plasma. However, the decrease in SiO2 etch rate with further increases in CF4 flow rate above 7 slm was attributed to the formation of a thick C-F polymer layer on the SiO2 surface. A SiO2 etch rate of approximately 243 nm/min was obtained with a gas mixture of N2 (60 slm)/NF3 (600 SCCM)/CF4 (7 slm), and an input voltage and operating frequency to the source of 10 kV and 30 kHz, respectively. The addition of 200 SCCM Ar to the above gas mixture increased the SiO2 etch rate to approximately 263 nm/min. This is possibly due to the increased ionization and dissociation of reactive species through penning ionization of Ar.

  15. Etching of graphene in a Hydrogen-rich Atmosphere towards the Formation of Hydrocarbons in Circumstellar Clouds

    PubMed Central

    Martínez, José I.; Martín-Gago, José A.; Cernicharo, José; de Andres, Pedro L.

    2015-01-01

    We describe a mechanism that explains the formation of hydrocarbons and hydrocarbyls from hydrogenated graphene/graphite; hard C–C bonds are weakened and broken by the synergistic effect of chemisorbed hydrogen and high temperature vibrations. Total energies, optimized structures, and transition states are obtained from Density Functional Theory simulations. These values have been used to determine the Boltzman probability for a thermal fluctuation to overcome the kinetic barriers, yielding the time scale for an event to occur. This mechanism can be used to rationalize the possible routes for the creation of small hydrocarbons and hydrocarbyls from etched graphene/graphite in stellar regions. PMID:26709358

  16. Producing Hydrogen by Plasma Pyrolysis of Methane

    NASA Technical Reports Server (NTRS)

    Atwater, James; Akse, James; Wheeler, Richard

    2010-01-01

    Plasma pyrolysis of methane has been investigated for utility as a process for producing hydrogen. This process was conceived as a means of recovering hydrogen from methane produced as a byproduct of operation of a life-support system aboard a spacecraft. On Earth, this process, when fully developed, could be a means of producing hydrogen (for use as a fuel) from methane in natural gas. The most closely related prior competing process - catalytic pyrolysis of methane - has several disadvantages: a) The reactor used in the process is highly susceptible to fouling and deactivation of the catalyst by carbon deposits, necessitating frequent regeneration or replacement of the catalyst. b) The reactor is highly susceptible to plugging by deposition of carbon within fixed beds, with consequent channeling of flow, high pressure drops, and severe limitations on mass transfer, all contributing to reductions in reactor efficiency. c) Reaction rates are intrinsically low. d) The energy demand of the process is high.

  17. Spatial profile monitoring of etch products of silicon in HBr/Cl{sub 2}/O{sub 2}/Ar plasma

    SciTech Connect

    Tanaka, Junichi; Miya, Go

    2007-03-15

    The authors have developed a radical-distribution monitoring system for obtaining the spatial profiles of etching products. This system combines Abel inversion and actinometry to estimate the local densities of radicals. The profiles of Si, SiCl, and SiCl{sub 2} in HBr/Cl{sub 2}/O{sub 2}/Ar plasma are captured with this monitoring system. From the gradient analysis of silicon-containing etch products, they found that the source of SiCl{sub 2} is the wafer surface and Si and SiCl are produced in the plasma. In other words, SiCl{sub 2} is produced by the etching reactions on the wafer and diffuses into the plasma to be the source of Si or SiCl through dissociation. In the etcher used for this experiment, etching gases are supplied from a top plate inducing downward flows. At a pressure as low as 0.4 Pa, the effect of convection on etch products is also observed. Increasing total gas flow rate intensifies convection and changes the spatial profile of SiCl{sub 2}. However, on the wafer surface, the convective effect saturated at a total flow rate of 200 SCCM (SCCM denotes cubic centimeter per minute at STP). The ratio of the emission intensities of SiCl{sub 2} and supplied etching gases was found to be a convenient index for visualizing the effect of gas flow. The shapes of the gas jet from both 170- and 50-mm-diameter gas inlets were drawn in contour plots. The jet from the narrow inlet swept away the etch products in the center of the wafer.

  18. Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming

    SciTech Connect

    Shoeb, Juline; Kushner, Mark J.

    2009-11-15

    To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

  19. Effect of plasma etching on destructive adsorption properties of polypropylene fibers containing magnesium oxide nanoparticles.

    PubMed

    Lange, Laura E; Obendorf, S Kay

    2012-02-01

    Dermal absorption of pesticides poses a danger for agricultural workers. Use of personal protection equipment (PPE) is required to provide protection; some of the current PPE involves impermeable barriers. In these barrier materials, the same mechanism that prevents the penetration of toxic chemicals also blocks the passage of water vapor and air from flowing through the material, making the garments uncomfortable. Fibers that degrade organophosphate pesticides, such as methyl parathion, were developed by incorporating metal oxides. These modified fibers can be incorporated into conventional fabric structures that allow water vapor to pass through, thereby maintaining comfort. Fibers with self-decontamination functionality were developed by incorporating magnesium oxide (MgO) nanoparticles into a polypropylene (PP) melt-extruded fiber. These fibers were then treated with plasma etching to expose increased surface area of the MgO nanoparticles. Three steps were involved in this research project: (1) determining the reactivity of MgO and methyl parathion, (2) making melt-spun MgO/PP fibers, and (3) testing the reactivity of MgO/PP composite fibers and methyl parathion. It was confirmed that MgO stoichiometrically degrades methyl parathion by way of destructive adsorption. The etching of the PP fibers containing MgO nanoparticles increased the chemical accessibility of MgO reactive sites, therefore making them more effective in degrading methyl parathion. These fibers can enhance the protection provided by PPE to agricultural and horticultural workers and military personnel. PMID:21850511

  20. Ultrastructure of cel organelles by scanning electron microscopy of thick sections surface-etched by an oxygen plasma.

    PubMed

    Humphreys, W J; Henk, W G

    1979-07-01

    Kidney tissue double fixed in glutaraldehyde and osmium tetroxide and embedded in epoxy resin by standard techniques used for transmission electron microscopy was cut into section 1 micron or more thick and surface-etched by an oxygen plasma. Etching caused ash residues (possibly composed partly or organo-metallic complexes) of membranes and other etch resistant cell components to emerge as recognizable structures projecting upward from the surrounding embedment which was combusted and removed as volatile products. using the secondary electron mode for image formation, structural features of cells which could be imaged with clarity with the scanning electron microscopy included: profiles of peripheral and in-folded plasma membranes, the nuclear envelope and profiles of cut mitochondrial matrix granules, cristae and the outer limiting membranes. Resolution was better than that obtainable from most other methods of specimen preparation currently being used in scanning electron microscopy for viewing the internal structures of cells or organelles in bulk samples of tissue.

  1. Single-crystal superconducting nanowires of NbSe{sub 2} fabricated by reactive plasma etching

    SciTech Connect

    Mills, Shaun A.; Staley, Neal E.; Wisser, Jacob J.; Shen, Chenyi; Xu, Zhuan; Liu, Ying

    2014-02-03

    We present the preparation and measurements of nanowires of single-crystal NbSe{sub 2}. These nanowires were prepared on ultrathin (≲10 nm) flakes of NbSe{sub 2} mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30 nm and cross-sectional areas as low as 270 nm{sup 2} were measured.

  2. Particle formation and its control in dual frequency plasma etching reactors

    SciTech Connect

    Kim, Munsu; Cheong, Hee-Woon; Whang, Ki-Woong

    2015-07-15

    The behavior of a particle cloud in plasma etching reactors at the moment when radio frequency (RF) power changes, that is, turning off and transition steps, was observed using the laser-light-scattering method. Two types of reactors, dual-frequency capacitively coupled plasma (CCP) and the hybrid CCP/inductively coupled plasma (ICP), were set up for experiments. In the hybrid CCP/ICP reactor (hereafter ICP reactor), the position and shape of the cloud were strongly dependent on the RF frequency. The particle cloud becomes larger and approaches the electrode as the RF frequency increases. By turning the lower frequency power off later with a small delay time, the particle cloud is made to move away from the electrode. Maintaining lower frequency RF power only was also helpful to reduce the particle cloud size during this transition step. In the ICP reactor, a sufficient bias power is necessary to make a particle trap appear. A similar particle cloud to that in the CCP reactor was observed around the sheath region of the lower electrode. The authors can also use the low-frequency effect to move the particle cloud away from the substrate holder if two or more bias powers are applied to the substrate holder. The dependence of the particle behavior on the RF frequencies suggests that choosing the proper frequency at the right moment during RF power changes can reduce particle contamination effectively.

  3. The reactions of carbon in a hydrogen plasma

    SciTech Connect

    Li, M.; Fan, Y.; Bao, W.; Guan, Y.; Li, S.

    2006-07-01

    Acetylene can be directly produced by coal pyrolysis in hydrogen plasma. A key factor affecting acetylene yield is whether the residue solid carbon is able to react with hydrogen to form acetylene after volatile matters released from coal powders pyrolyzed in hydrogen plasma. Reactions of carbon in hydrogen plasma are studied in this article. The study showed that solid carbon could hardly react with hydrogen at temperatures below the sublimation point, while sublimated carbon could easily react with hydrogen at temperatures above sublimation point, and mainly acetylene and other hydrocarbons can be obtained after quenching process.

  4. Dry etching method for compound semiconductors

    DOEpatents

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  5. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  6. Argon plasma inductively coupled plasma reactive ion etching study for smooth sidewall thin film lithium niobate waveguide application

    NASA Astrophysics Data System (ADS)

    Ulliac, G.; Calero, V.; Ndao, A.; Baida, F. I.; Bernal, M.-P.

    2016-03-01

    Lithium Niobate (LN) exhibits unique physical properties such as remarkable electro-optical coefficients and it is thus an excellent material for a wide range of fields like optic communications, lasers, nonlinear optical applications, electric field optical sensors etc. In order to further enhance the optical device performance and to be competitive with silicon photonics, sub-micrometric thickness lithium niobate films are crucial. A big step has been achieved with the development of LN thin films by using smart cut technology and wafer bonding and these films are nowadays available in the market. However, it is a challenge to obtain the requirements of the high quality thin LN film waveguide. In this letter, we show smooth ridge waveguides fabricated on 700 nm thickness thin film lithium niobate (TFLN). The fabrication has been done by developing and optimizing three steps of the technological process, the mask fabrication, the plasma etching, and a final cleaning wet etching step in order to remove the lithium niobate redeposition on the side walls. We have obtained single mode propagation with light overall losses of only 5 dB/cm.

  7. Plasma etching processes for the integration of InP based compounds on 200mm Si wafer for photonic applications

    NASA Astrophysics Data System (ADS)

    Pargon, E.; Gay, G.; Petit-Etienne, C.; Brihoum, M.; Bizouerne, M.; Burtin, P.; Barnola, S.

    2016-03-01

    Ar/Cl2/CH4 gas mixture has been investigated for the development of plasma etching process dedicated to the patterning of 3μm-deep InP structures integrated on 200mm SiO2 carrier wafer. The plasma process requirements are: high InP etch rates (>500nm.min-1), high InP/SiO2 selectivity (<40), anisotropic profiles and smooth bottom and sidewalls surfaces. The process development mainly focuses on the impact of the gas ratio and gas flow on the etch rates, selectivity, pattern profile and surface roughness. It is demonstrated that the CH4 flow drives the process performance and that by adjusting it properly, a narrow process window provides acceptable selectivity of 25, anisotropic profiles and smooth surface. The difficulty of the process development using Ar/Cl2/CH4 gas mixture is to combine high InP/SiO2 selectivity and anisotropic profiles since to passivate efficiently the InP sidewalls and prevent from lateral etching, it seems that a SiOC like deposition is needed, which is only possible if the SiO2 wafer is etched.

  8. Influence of ion mixing on the energy dependence of the ion-assisted chemical etch rate in reactive plasmas

    SciTech Connect

    Stafford, L.; Pearton, S. J.; Margot, J.

    2006-09-15

    Recently, Stafford et al. [Appl. Phys. Lett. 87, 071502 (2005)] have shown that in contrast to the etch yield on a saturated surface, the ion-assisted chemical etch rate cannot universally be modeled by a simple square-root energy dependence. This results from the surface coverage by reactive neutral species being also a function of the ion energy. In this work, we further point out that depending on the plasma-material combination, the etch rate can exhibit two regimes that are characterized by different dependences on the ion energy. While these results are inconsistent with currently available models, we show that they can be interpreted by taking into account ion mixing effects on the desorption rate of volatile reaction products involved in the model of Stafford et al. Application of this rate model to the etching of Si, SiO{sub 2}, HfO{sub 2}, and ZrO{sub 2} in chlorine and fluorine plasma chemistries provides an excellent description of the simultaneous dependence of the etch rate on ion energy and on ion and reactive neutral fluxes.

  9. Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma

    NASA Astrophysics Data System (ADS)

    Min, Jae-Ho; Hwang, Sung-Wook; Lee, Gyeo-Re; Moon, Sang Heup

    2002-09-01

    The effect of etch-product redeposition on sidewall properties during the etching of step-shaped SiO2 patterns in a CF4 plasma was examined using a Faraday cage located in a transformer coupled plasma etcher. Sidewall properties were observed for two cases: with and without particles emitted from the bottom surface in normal contact with the sidewall. Particles sputtered from the bottom surface were redeposited on the sidewall, which contributes to the formation of a passivation layer on the surface of the latter. The passivation layer consisted of silicon oxide, SixOy, and fluorocarbon, CxFy, the latter comprising the major species. Ar plasma experiments confirmed that CxFy or a fluorocarbon polymer must be present on the sidewall in order for the SixOy species to be deposited on the surface. The redeposited particles, which were largely F-deficient fluorocarbon species, as evidenced by x-ray photoelectron spectroscopy analyses, functioned as precursors for fluorocarbon polymerization, resulting in a rough sidewall surface. The chemical etch rates of SiO2 were retarded by the redeposition of particles, which eventually formed a thick layer, eventually covering the bulk SiO2. Auger electron spectroscopy analyses of the sidewall surface affected by the emission from the bottom suggest that the surface consists of three distinct layers: a surface-carbon layer, a redeposition-etch combined layer, and bulk SiO2. copyright 2002 American Vacuum Society.

  10. Materials and Device Analysis of Hydrogen Plasma Prepared Silicon Surfaces

    NASA Astrophysics Data System (ADS)

    Montgomery, Jeffrey Scott

    The effects of a hydrogen plasma on a single crystal silicon wafer were characterized using both surface analysis techniques and MOS transistor evaluation. Analysis of the silicon surface was focused on the effects of the H -plasma on (i) the surface structure and microroughness as revealed by atomic force microscopy, (ii) the elemental surface constituents as revealed by AES and SIMS, and (iii) the surface electronic structure as revealed by electron diffraction techniques. MOS field effect transistors were fabricated and evaluated following identical hydrogen plasma exposures prior to gate-oxide deposition. The devices were then characterized according to threshold voltage and peak mobility. The effective mobility of each device was calculated and fit to an empirical model which accounted for electron scattering in the inversion layer due to bulk ionized impurities, bulk and surface phonons, interface charges, and interface roughness. The interaction of atomic hydrogen and a silicon surface was found to be strongly dependent on the substrate temperature during processing. The rms roughness for the boron-doped silicon surfaces used in these experiments was calculated to be 2 +/- 1 A for surfaces subjected to only ex situ cleaning. Following a H-plasma treatment for 10 minutes at a substrate temperature of 200^circC, the surface roughness increased to 23 +/- 5 A. The autocorrelation function calculated for this sample exhibited long range surface structure. Samples treated at temperatures from 500 to 700^circC for 10 minutes exhibited little or no change in surface roughness or morphology. The 700^circC case resulted a slight increase in surface morphology to 4 +/- 1 A. Testing of the MOSFET devices revealed a significant reduction in device performance for H-plasma exposures in the gate region at substrate temperatures <=q 400^circC. Devices which were subjected to the H-plasma at substrate temperatures of 500-700^circC exhibited properties similar to the control

  11. Nonhomogeneous surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Yang, Bin; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng; Liu, Jingquan

    2016-10-01

    Surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air were investigated. The morphologies and chemical compositions of the etched surface were analyzed by optical microscopy, SEM, EDS, XPS and ATR-FTIR. The microscopy and SEM images showed the etched surface was nonhomogeneous with six discernable ring patterns from the center to the outside domain, which were composed of (I) a central region; (II) an effective etching region, where almost all of the parylene-C film was removed by the plasma jet with only a little residual parylene-C being functionalized with carboxyl groups (Cdbnd O, Osbnd Cdbnd O-); (III) an inner etching boundary; (IV) a middle etching region, where the film surface was smooth and partially removed; (V) an outer etching boundary, where the surface was decorated with clusters of debris, and (VI) a pristine parylene-C film region. The analysis of the different morphologies and chemical compositions illustrated the different localized etching process in the distinct regions. Besides, the influence of O2 flow rate on the surface properties of the etched parylene-C film was also investigated. Higher volume of O2 tended to weaken the nonhomogeneous characteristics of the etched surface and improve the etched surface quality.

  12. High rate and highly selective anisotropic etching for WSi{sub {ital x}}/poly-Si using electron cyclotron resonance plasma

    SciTech Connect

    Nojiri, K.; Tsunokuni, K.; Yamazaki, K.

    1996-05-01

    High rate and highly selective anisotropic etching for tungsten polycide (WSi{sub {ital x}}/poly-Si) has been developed by fully utilizing such advantages of the electron cyclotron resonance plasma etcher, as high plasma density and independent control of ion energy and plasma density. Highly anisotropic etching with a WSi{sub {ital x}}/poly-Si etch rate of 400 nm/min and a poly-Si/SiO{sub 2} selectivity of 50 was realized by adding O{sub 2} to Cl{sub 2} and reducing the ion energy. O{sub 2} addition increases the WSi{sub {ital x}} etch rate and reduces the SiO{sub 2} etch rate, keeping the poly-Si etch rate nearly constant. This leads to the same etch rate for WSi{sub {ital x}} and poly-Si, and a higher selectivity for poly-Si/SiO{sub 2}. The decrease in the SiO{sub 2} etch rate was found to be mainly caused by a deposition of SiO{sub {ital x}} on the surface. The role of the O{sub 2} was found to be not only increasing the WSi{sub {ital x}} etch rate and the poly-Si/SiO{sub 2} selectivity but forming a sidewall protection film to achieve an anisotropic etching. {copyright} {ital 1996 American Vacuum Society}

  13. Impact of etching kinetics on the roughening of thermal SiO{sub 2} and low-k dielectric coral films in fluorocarbon plasmas

    SciTech Connect

    Yin Yunpeng; Sawin, Herbert H.

    2007-07-15

    The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ion scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.

  14. Monitoring of inner wall condition in mass-production plasma etching process using a load impedance monitoring system

    NASA Astrophysics Data System (ADS)

    Kasashima, Yuji; Kurita, Hiroyuki; Kimura, Naoya; Ando, Akira; Uesugi, Fumihiko

    2015-06-01

    This work describes the detection of changes in the inner wall condition of mass-production plasma etching equipment using a load impedance monitoring system. The system detects the change in the imaginary part of the load impedance from a 50-Ω transmission line when the inner wall condition changes following exposure to the atmosphere. The results demonstrate that the system can be used as a practical method for real-time and noninvasive monitoring of the wall condition of etching chambers. This method will contribute to improvements in production yield and overall equipment effectiveness, and the development of predictive maintenance in semiconductor manufacturing.

  15. Relationship between gas-phase chemistries and surface processes in fluorocarbon etch plasmas: A process rate model

    SciTech Connect

    Sant, S. P.; Nelson, C. T.; Overzet, L. J.; Goeckner, M. J.

    2009-07-15

    In a typical plasma tool, both etch and deposition occur simultaneously. Extensive experimental measurements are used to help develop a general model of etch and deposition processes. This model employs reaction probabilities, or surface averaged cross sections, to link the measurable surface processes, etch and deposition, to the flux of various species to the surfaces. Because the cross sections are quantum mechanical in nature, this surface rate model should be applicable to many low temperature plasma processing systems. Further, the parameters that might be important in reaction cross sections are known from quantum mechanics, e.g., species, energy, temperature, and impact angle. Such parameters might vary from system to system, causing the wide processing variability observed in plasma tools. Finally the model is used to compare measurements of ion flux, ion energy, and fluorocarbon radical flux to the measured process rates. It is found that the model appears to be consistent with calculations of gain/loss rates for the various radicals present in the discharge as well as measured etch and deposition rates.

  16. Oxygen and nitrogen plasma etching of three-dimensional hydroxyapatite/chitosan scaffolds fabricated by additive manufacturing

    NASA Astrophysics Data System (ADS)

    Myung, Sung-Woon; Kim, Byung-Hoon

    2016-01-01

    Three-dimensional (3D) chitosan and hydroxyapatite (HAp)/chitosan (CH) scaffolds were fabricated by additive manufacturing, then their surfaces were etched with oxygen (O2) and nitrogen (N2) plasma. O2 and N2 plasma etching was performed to increase surface properties such as hydrophilicity, roughness, and surface chemistry on the scaffolds. After etching, hydroxyapatite was exposed on the surface of 3D HAp/CH scaffolds. The surface morphology and chemical properties were characterized by contact angle measurement, scanning electron microscopy, X-ray diffraction, and attenuated total reflection Fourier infrared spectroscopy. The cell viability of 3D chitosan scaffolds was examined by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay. The differentiation of preosteoblast cells was evaluated by alkaline phosphatase assay. The cell viability was improved by O2 and N2 plasma etching of 3D chitosan scaffolds. The present fabrication process for 3D scaffolds might be applied to a potential tool for preparing biocompatible scaffolds.

  17. Effect of source frequency and pulsing on the SiO2 etching characteristics of dual-frequency capacitive coupled plasma

    NASA Astrophysics Data System (ADS)

    Kim, Hoe Jun; Jeon, Min Hwan; Mishra, Anurag Kumar; Kim, In Jun; Sin, Tae Ho; Yeom, Geun Young

    2015-01-01

    A SiO2 layer masked with an amorphous carbon layer (ACL) has been etched in an Ar/C4F8 gas mixture with dual frequency capacitively coupled plasmas under variable frequency (13.56-60 MHz)/pulsed rf source power and 2 MHz continuous wave (CW) rf bias power, the effects of the frequency and pulsing of the source rf power on the SiO2 etch characteristics were investigated. By pulsing the rf power, an increased SiO2 etch selectivity was observed with decreasing SiO2 etch rate. However, when the rf power frequency was increased, not only a higher SiO2 etch rate but also higher SiO2 etch selectivity was observed for both CW and pulse modes. A higher CF2/F ratio and lower electron temperature were observed for both a higher source frequency mode and a pulsed plasma mode. Therefore, when the C 1s binding states of the etched SiO2 surfaces were investigated using X-ray photoelectron spectroscopy (XPS), the increase of C-Fx bonding on the SiO2 surface was observed for a higher source frequency operation similar to a pulsed plasma condition indicating the increase of SiO2 etch selectivity over the ACL. The increase of the SiO2 etch rate with increasing etch selectivity for the higher source frequency operation appears to be related to the increase of the total plasma density with increasing CF2/F ratio in the plasma. The SiO2 etch profile was also improved not only by using the pulsed plasma but also by increasing the source frequency.

  18. Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

    SciTech Connect

    Sung, Dougyong; Jeong, Sangmin; Park, Youngmin; Volynets, Vladimir N.; Ushakov, Andrey G.; Kim, Gon-Ho

    2009-01-15

    The influence of the phase shift between rf voltages applied to the powered electrodes on plasma parameters and etch characteristics was studied in a very high-frequency (VHF) capacitively coupled plasma (CCP) triode reactor. rf voltages at 100 MHz were simultaneously applied to the top and bottom electrodes having a controlled phase shift between them, which could be varied between 0 deg. and 360 deg. Several plasma and process characteristics were measured as a function of the phase shift: (i) radial profiles of plasma-emission intensity, (ii) line-of-sight averaged plasma-emission intensity, and (iii) radial profiles of blanket SiO{sub 2} etching rate over a 300 mm wafer. Radial profiles of plasma emission were obtained using the scanning optical probe. It has been shown that all the measured characteristics strongly depend on the phase shift: (i) plasma-emission intensity is minimal at phase shift equal to 0 deg. and maximal at 180 deg. for all radial positions, while the emission radial profile changes from bell-shaped distribution with considerable nonuniformity at 0 deg. to a much more flattened distribution at 180 deg.; (ii) line-of-sight averaged plasma-emission intensity shows a similar dependence on the phase shift with minimum and maximum at 0 deg. and 180 deg., respectively; and (iii) the etch-rate radial profile at 180 deg. shows a much better uniformity as compared to that at 0 deg. Some of these results can be qualitatively explained by the redistribution of plasma currents that flow between the electrodes and also from the electrodes to the grounded wall with the phase shift. We suggest that the phase-shift effect can be used to improve the plasma and etch-rate spatial uniformity in VHF-CCP triode reactors.

  19. A new reactive atom plasma technology (RAPT) for precision machining: the etching of ULE optical surfaces

    NASA Astrophysics Data System (ADS)

    Fanara, Carlo; Shore, Paul; Nicholls, John R.; Lyford, Nicholas; Sommer, Phil; Fiske, Peter

    2006-06-01

    The next generation of 30-100 metre diameter extremely large telescopes (ELTs) requires large numbers of hexagonal primary mirror segments. As part of the Basic Technology programme run jointly by UCL and Cranfield University, a reactive atomic plasma technology (RAP(tm)) emerged from the US Lawrence Livermore National Laboratory (LLNL), is employed for the finishing of these surfaces. Results are presented on this novel etching technology. The Inductively Coupled Plasma (ICP) operated at atmospheric pressure using argon, activates the chemical species injected through its centre and promotes the fluorine-based chemical reactions at the surface. Process assessment trials on Ultra Low Expansion (ULE(tm)) plates, previously ground at high material removal rates, have been conducted. The quality of the surfaces produced on these samples using the RAP process are discussed. Substantial volumetric material removal rates of up to 0.446(21) mm 3/s at the highest process speed (1,200 mm/min) were found to be possible without pre-heating the substrate. The influences of power transfer, process speed and gas concentration on the removal rates have been determined. The suitability of the RAP process for revealing and removing sub-surface damage induced by high removal rate grinding is discussed. The results on SiC samples are reported elsewhere in this conference.

  20. Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics

    SciTech Connect

    Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

    2002-10-01

    In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

  1. Hydrogen atom in a laser-plasma

    NASA Astrophysics Data System (ADS)

    Falaye, Babatunde J.; Sun, Guo-Hua; Liman, Muhammed S.; Oyewumi, K. J.; Dong, Shi-Hai

    2016-11-01

    We scrutinize the behaviour of the eigenvalues of a hydrogen atom in a quantum plasma as it interacts with an electric field directed along θ  =  π and is exposed to linearly polarized intense laser field radiation. We refer to the interaction of the plasma with the laser light as laser-plasma. Using the Kramers–Henneberger (KH) unitary transformation, which is the semiclassical counterpart of the Block–Nordsieck transformation in the quantized field formalism, the squared vector potential that appears in the equation of motion is eliminated and the resultant equation is expressed in the KH frame. Within this frame, the resulting potential and the corresponding wavefunction have been expanded in Fourier series, and using Ehlotzky’s approximation we obtain a laser-dressed potential to simulate an intense laser field. By fitting the exponential-cosine-screened Coulomb potential into the laser-dressed potential, and then expanding it in Taylor series up to O≤ft({{r}4},α 09\\right) , we obtain the eigensolution (eigenvalues and wavefunction) of the hydrogen atom in laser-plasma encircled by an electric field, within the framework of perturbation theory formalism. Our numerical results show that for a weak external electric field and a very large Debye screening parameter length, the system is strongly repulsive, in contrast with the case for a strong external electric field and a small Debye screening parameter length, when the system is very attractive. This work has potential applications in the areas of atomic and molecular processes in external fields, including interactions with strong fields and short pulses.

  2. Synthesis of few-layered graphene by H{sub 2}O{sub 2} plasma etching of graphite

    SciTech Connect

    Zhao Guixia; Shao Dadong; Chen Changlun; Wang Xiangke

    2011-05-02

    Herein, we reported an approach to synthesize few-layered graphene by etching of the graphite using H{sub 2}O{sub 2} plasma technique. The synthesized few-layered graphene was characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). The analysis showed that few-layered graphene was formed in high quality level. The XPS analysis suggested that H{sub 2}O{sub 2} plasma etching of graphite could oxidize graphene and generated -C-OH and >C=O groups on the graphene surfaces. The H{sub 2}O{sub 2} plasma technique is an easy and environmental friendly method to synthesize few-layered graphene from the graphite.

  3. Electromigration study of copper lines on steps prepared by a plasma-based etch process

    SciTech Connect

    Lin, Chi-Chou; Kuo Yue

    2012-03-15

    The electromigration phenomenon of the copper line etched with a plasma-based process over the SiN{sub x} step has been investigated. Two important factors, i.e., the dielectric topography and the stress temperature, were examined using the accelerated isothermal electromigration method. The activation energy of 0.73 eV to 0.89 eV indicates two possible mass transport pathways: interfacial and copper surface diffusions. The copper line on the SiN{sub x} step has a shorter lifetime and a smaller activation energy than the copper line on the flat surface has. For the former, voids were formed at the cusp region and perpendicular to the current flow direction. For the latter, voids were formed in series and parallel to the current flow direction. The ''neck'' structure at the cusp region, which is a result of the inappropriate etching condition, further decreased the lifetime and the activation energy. The lifetime of the ''neck-free'' copper line over the SiN{sub x} step was estimated to be 7.1 x 10{sup 9} s under the high-speed IC operation condition. The thermal stress mismatch between the copper layer and TiW barrier layer as well as the underneath dielectric layer facilitated the void formation. The step effect on the lifetime was reduced when the test temperature was high because of the change of the local stress. In summary, the topography and the test temperature are critical factors for the copper line's lifetime.

  4. Roughening of Polyimide Surface for Inkjet Printing by Plasma Etching Using the Polyimide Masked with Polystyrene Nanosphere Array.

    PubMed

    Mun, Mu Kyeom; Park, Jin Woo; Ahn, Jin Ho; Kim, Ki Kang; Yeom, Geun Young

    2015-10-01

    Two key conditions are required for the application of fine-line inkjet printing onto a flexible substrate such as polyimide (PI): linewidth control during the inkjetting process, and a strong adhesion of the polyimide surface to the ink after the ink solidifies. In this study, the properties of a polyimide surface that was roughened through etching in a He/SF6 plasma, using a polystyrene nanosphere array as the etch mask, were investigated. The near-atmospheric-pressure plasma system of the He/SF6 plasma that was used exhibits two notable properties in this context: similar to an atmospheric-pressure plasma system, it can easily handle inline substrate processing; and, similar to a vacuum system, it can control the process gas environment. Through the use of plasma etching, the polyimide surface masked the 120-nm-diameter polystyrene nanospheres, thereby forming a roughened nanoscale polyimide surface. This surface exhibited not only a greater hydrophobicity--with a contact angle of about 150° for water and about 30° for silver ink, indicating better silver linewidth control during the silver inkjetting process--but also a stronger adhesion to the silver ink sprayed onto it when compared with the flat polyimide surface. PMID:26726483

  5. Negative ion extraction from hydrogen plasma bulk

    SciTech Connect

    Oudini, N.; Taccogna, F.; Minelli, P.

    2013-10-15

    A two-dimensional particle-in-cell/Monte Carlo collision model has been developed and used to study low electronegative magnetized hydrogen plasma. A configuration characterized by four electrodes is used: the left electrode is biased at V{sub l} = −100 V, the right electrode is grounded, while the upper and lower transversal electrodes are biased at an intermediate voltage V{sub ud} between 0 and −100 V. A constant and homogeneous magnetic field is applied parallel to the lateral (left/right) electrodes. It is shown that in the magnetized case, the bulk plasma potential is close to the transversal electrodes bias inducing then a reversed sheath in front of the right electrode. The potential drop within the reversed sheath is controlled by the transversal electrodes bias allowing extraction of negative ions with a significant reduction of co-extracted electron current. Furthermore, introducing plasma electrodes, between the transversal electrodes and the right electrode, biased with a voltage just above the plasma bulk potential, increases the negative ion extracted current and decreases significantly the co-extracted electron current. The physical mechanism on basis of this phenomenon has been discussed.

  6. Oxygen plasma etching of graphene: A first-principles dynamical inspection of the reaction mechanisms and related activation barriers

    NASA Astrophysics Data System (ADS)

    Koizumi, Kenichi; Boero, Mauro; Shigeta, Yasuteru; Oshiyama, Atsushi; Dept. of Applied Physics Team; Institute of Physics and Chemistry of Strasbourg (IPCMS) Collaboration; Department Of Materials Engineering Science Collaboration

    2013-03-01

    Oxygen plasma etching is a crucial step in the fabrication of electronic circuits and has recently received a renovated interest in view of the realization of carbon-based nanodevices. In an attempt at unraveling the atomic-scale details and to provide guidelines for the control of the etching processes mechanisms, we inspected the possible reaction pathways via reactive first principles simulations. These processes involve breaking and formation of several chemical bonds and are characterized by different free-energy barriers. Free-energy sampling techniques (metadynamics and blue moon), used to enhance the standard Car-Parrinello molecular dynamics, provide us a detailed microscopic picture of the etching of graphene surfaces and a comprehensive scenario of the activation barriers involved in the various steps. MEXT, Japan - contract N. 22104005

  7. Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

    SciTech Connect

    Hübner, M.; Lang, N.; Röpcke, J.; Helden, J. H. van; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.

    2015-01-19

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  8. Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

    NASA Astrophysics Data System (ADS)

    Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

    2015-01-01

    To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

  9. Effects of in situ N{sub 2} plasma treatment on etch of HfO{sub 2} in inductively coupled Cl{sub 2}/N{sub 2} plasmas

    SciTech Connect

    Lin Chaung; Leou, K.-C.; Fan, Y.-C.; Li, T.-C.; Chang, K.-H.; Lee, L.-S.; Tzeng, P.-J.

    2007-05-15

    The etch selectivity of HfO{sub 2} to Si reported to date is poor. To improve the selectivity, one needs to either increase the etch rate of HfO{sub 2} or decrease the etch rate of Si. In this work, the authors investigate the etch selectivity of HfO{sub 2} in Cl{sub 2}/N{sub 2} plasmas. In particular, the effects of in situ N{sub 2} plasma treatment of HfO{sub 2} and Si were investigated. The silicon substrate was exposed to nitrogen plasma and was nitrided, which was confirmed by x-ray photoelectron spectroscopy. The nitrided Si etching was suppressed in Cl{sub 2}/N{sub 2} plasmas. The effectiveness of nitridation was studied with varying the plasma power, bias power, pressure, and N{sub 2} plasma exposure time. The results show that the etch resistance increased with increased power and decreased pressure. A minimum exposure time was required to obtain etch resistant property. The applied bias power increased the etch rate of Si substrate, so it should not be used during N{sub 2} plasma treatment. Fortunately, the etch rate of HfO{sub 2} was increased by the nitridation process. Therefore, HfO{sub 2}/Si selectivity can be improved by nitridation and became higher than 5 under proper exposure condition.

  10. Effects of N{sub 2} addition on chemical dry etching of silicon oxide layers in F{sub 2}/N{sub 2}/Ar remote plasmas

    SciTech Connect

    Hwang, J.Y.; Kim, D.J.; Lee, N.-E.; Jang, Y.C.; Bae, G.H.

    2006-07-15

    In this study, chemical dry etching characteristics of silicon oxide layers were investigated in the F{sub 2}/N{sub 2}/Ar remote plasmas. A toroidal-type remote plasma source was used for the generation of remote plasmas. The effects of additive N{sub 2} gas on the etch rates of various silicon oxide layers deposited using different deposition techniques and precursors were investigated by varying the various process parameters, such as the F{sub 2} flow rate, the additive N{sub 2} flow rate, and the substrate temperature. The etch rates of the various silicon oxide layers at room temperature were initially increased and then decreased with the N{sub 2} flow increased, which indicates an existence of the maximum etch rates. Increase in the oxide etch rates under the decreased optical emission intensity of the F radicals with the N{sub 2} flow increased implies that the chemical etching reaction is in the chemical reaction-limited regime, where the etch rate is governed by the surface chemical reaction rather than the F radical density. The etch rates of the silicon oxide layers were also significantly increased with the substrate temperature increased. In the present experiments, the F{sub 2} gas flow, the additive N{sub 2} flow rate, and the substrate temperature were found to be the critical parameters in determining the etch rate of the silicon oxide layers.

  11. Electron Recombination in a Dense Hydrogen Plasma

    SciTech Connect

    Jana, M.R.; Johnstone, C.; Kobilarcik, T.; Koizumi, G.M.; Moretti, A.; Popovic, M.; Tollestrup, A.V.; Yonehara, K.; Leonova, M.A.; Schwarz, T.A.; Chung, M.; /Unlisted /IIT, Chicago /Fermilab /MUONS Inc., Batavia /Turin Polytechnic

    2012-05-01

    A high pressure hydrogen gas filled RF cavity was subjected to an intense proton beam to study the evolution of the beam induced plasma inside the cavity. Varying beam intensities, gas pressures and electric fields were tested. Beam induced ionized electrons load the cavity, thereby decreasing the accelerating gradient. The extent and duration of this degradation has been measured. A model of the recombination between ionized electrons and ions is presented, with the intent of producing a baseline for the physics inside such a cavity used in a muon accelerator. Analysis of the data taken during the summer of 2011 shows that self recombination takes place in pure hydrogen gas. The decay of the number of electrons in the cavity once the beam is turned off indicates self recombination rather than attachment to electronegative dopants or impurities. The cross section of electron recombination grows for larger clusters of hydrogen and so at the equilibrium of electron production and recombination in the cavity, processes involving H{sub 5}{sup +} or larger clusters must be taking place. The measured recombination rates during this time match or exceed the analytic predicted values. The accelerating gradient in the cavity recovers fully in time for the next beam pulse of a muon collider. Exactly what the recombination rate is and how much the gradient degrades during the 60 ns muon collider beam pulse will be extrapolated from data taken during the spring of 2012.

  12. Effect of temperature on layer separation by plasma hydrogenation

    SciTech Connect

    Di, Z. F.; Wang, Y. Q.; Nastasi, M.; Rossi, F.; Shao, L.; Thompson, P. E.

    2008-12-22

    We have studied hydrogen diffusion in plasma hydrogenated Si/SiGe/Si heterostructure at different temperatures. At low temperature, intrinsic point defects in the molecular beam epitaxy grown Si capping layer are found to compete with the buried strain SiGe layer for hydrogen trapping. The interaction of hydrogen with point defects affects the hydrogen long-range diffusion, and restricts the amount of hydrogen available for trapping by the SiGe layer. However, hydrogen trapping by the capping layer is attenuated with increasing hydrogenation temperature allowing more hydrogen to be trapped in the strain SiGe layer with subsequent surface blister formation. A potential temperature window for plasma hydrogenation induced layer separation is identified based on the combined considerations of trap-limited diffusion at low temperature and outdiffusion of H{sub 2} molecule together with the dissociation of Si-H bonds inside of H platelet at high temperature.

  13. Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

    SciTech Connect

    Rawal, Dipendra Singh Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan

    2014-05-15

    GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2 μm/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

  14. Etch mechanism of In{sub 2}O{sub 3} and SnO{sub 2} thin films in HBr-based inductively coupled plasmas

    SciTech Connect

    Kwon, Kwang-Ho; Efremov, Alexander; Kim, Moonkeun; Min, Nam Ki; Jeong, Jaehwa; Hong, MunPyo; Kim, Kwangsoo

    2010-03-15

    The investigations of etch characteristics and mechanisms for both In{sub 2}O{sub 3} and SnO{sub 2} thin films in the HBr-based inductively coupled plasmas were carried out. The etch rates were measured as functions of gas mixing ratio (0%-100% Ar), input power (400-700 W), and gas pressure (4-10 mTorr) at fixed bias power (200 W) and gas flow rate [40 SCCM (SCCM denotes cubic centimeter per minute at STP)]. Plasma parameters and composition were determined using a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. The correlations between the behaviors of etch rates and fluxes of plasma active species allow one to infer both In{sub 2}O{sub 3} and SnO{sub 2} etch mechanisms as the transitional regime of ion-assisted chemical reaction, which is controlled by neutral and charged fluxes together.

  15. Plasma processing methods for hydrogen production

    NASA Astrophysics Data System (ADS)

    Mizeraczyk, Jerzy; Jasiński, Mariusz

    2016-08-01

    In the future a transfer from the fossil fuel-based economy to hydrogen-based economy is expected. Therefore the development of systems for efficient H2 production becomes important. The several conventional methods of mass-scale (or central) H2 production (methane, natural gas and higher hydrocarbons reforming, coal gasification reforming) are well developed and their costs of H2 production are acceptable. However, due to the H2 transport and storage problems the small-scale (distributed) technologies for H2 production are demanded. However, these new technologies have to meet the requirement of producing H2 at a production cost of (1-2)/kg(H2) (or 60 g(H2)/kWh) by 2020 (the U.S. Department of Energy's target). Recently several plasma methods have been proposed for the small-scale H2 production. The most promising plasmas for this purpose seems to be those generated by gliding, plasmatron and nozzle arcs, and microwave discharges. In this paper plasma methods proposed for H2 production are briefly described and critically evaluated from the view point of H2 production efficiency. The paper is aiming at answering a question if any plasma method for the small-scale H2 production approaches such challenges as the production energy yield of 60 g(H2)/kWh, high production rate, high reliability and low investment cost. Contribution to the topical issue "6th Central European Symposium on Plasma Chemistry (CESPC-6)", edited by Nicolas Gherardi, Ester Marotta and Cristina Paradisi

  16. A new method of dry cleaning after plasma etching of MRAM materials

    NASA Astrophysics Data System (ADS)

    Kubo, Takuya; Kang, Song-Yun; Tokyo Electron Ltd. Team

    2015-09-01

    This paper describes a new method for dry cleaning after etching of MRAM materials. Problems such as repeatability or particle generation after etching of MRAM materials are due to the non-volatile nature of etch products. A new etch concept for MRAM is to etch each material such as carbon, metal, or silicon compounds step by step. There are 4 steps in this cleaning: 1) carbon removal by N2/H2, 2) metal removal by Ar, 3) silicon removal by CF4/O2, 4) carbon, oxygen, and fluorine removal by N2/H2. Etch repeatability and particle level reduction have been demonstrated to result from this cleaning method. Akasaka Biz Tower, 5-3-1 Akasaka Minato-ku, Tokyo 107-6325, Japan.

  17. Etching studies of silica glasses in SF{sub 6}/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

    SciTech Connect

    Lallement, L.; Gosse, C.; Cardinaud, C.; Peignon-Fernandez, M.-C.; Rhallabi, A.

    2010-03-15

    To fabricate microlaboratories, commercially available silica glasses represent a good alternative to the expensive quartz or fused silica substrates. Therefore, the authors have here investigated the behavior of four of them--Vycor, Pyrex, D263, and AF45--in SF{sub 6} and SF{sub 6}/Ar inductively coupled plasmas. Using Vycor, a material close to pure SiO{sub 2}, as a reference, they demonstrated that the etch rate negatively correlates with the global content in metallic oxides. However, no such clear trend was found for the surface roughness and they hypothesize that the large asperities (>500 nm) sometimes observed might be due to local variation in the glass surface composition. Furthermore, investigations on the influence of the plasma conditions (i.e., source power, dc self-bias, gas mixture, and pressure) on the etch rate, surface chemistry, and surface morphology, as well as positive ion current and fluorine concentration measurements, enable them to unravel an ion enhanced chemical etching mechanism, where stronger ion assistance is needed when more metallic oxides are present. By increasing the ion to neutral flux ratio, they consequently could, for all the materials, reduce the surface roughness to less than 5 nm while maintaining etch rates around 150 nm/min. These conditions have further been used to optimize pattern transfer experiments.

  18. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    SciTech Connect

    Bouchoule, Sophie Cambril, Edmond; Guilet, Stephane; Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  19. Feasibility study of monitoring of plasma etching chamber conditions using superimposed high-frequency signals on rf power transmission line

    NASA Astrophysics Data System (ADS)

    Kasashima, Y.; Uesugi, F.

    2015-10-01

    An in situ monitoring system that can detect changes in the conditions of a plasma etching chamber has been developed. In the system, low-intensity high-frequency signals are superimposed on the rf power transmission line used for generating plasma. The system measures reflected high-frequency signals and detects the change in their frequency characteristics. The results indicate that the system detects the changes in the conditions in etching chambers caused by the changes in the electrode gap and the inner wall condition and demonstrate the effectiveness of the system. The system can easily be retrofitted to mass-production equipment and it can be used with or without plasma discharge. Therefore, our system is suitable for in situ monitoring of mass-production plasma etching chambers. The system is expected to contribute to development of predictive maintenance, which monitors films deposited on the inner wall of the chamber and prevents equipment faults caused by misalignment of chamber parts in mass-production equipment.

  20. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity

    NASA Astrophysics Data System (ADS)

    Shoeb, Juline

    Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many of the thin layers of silicon integrated circuits and to remove masking layers while maintaining high selectivity. Integrated plasma processes consisting of sequential steps such as etch, clean and surface modification, are used in semiconductor industries. The surface in contact with the process plasma is exposed to the fluxes of neutrals, ions, molecules, electrons and photons. Modeling of surface reaction mechanisms requires the determination of the characterizations of fluxes (e.g. composition, magnitude, energy and angle) and development of the reaction mechanisms of the processes such as adsorption, reflection, bond breaking and etch product evolution, while reproducing the experimental results. When modeling the reaction mechanism for an entirely new material, the experimental data is often fragmentary. Therefore, fundamental principles such as bond energies and volatility of the etch products must be considered to develop the mechanism. In this thesis, results from a computational investigation of porous low-k SiCOH etching in fluorocarbon plasmas, damage during cleaning of CFx polymer etch residue in Ar/O2 and He/H2 plasmas, NH3 plasma pore sealing and low-k degradation due to water uptake, will be discussed. The plasma etching of HfO2 gate-stacks is also computationally investigated with an emphasis on the selectivity between HfO2 and Si.

  1. Sensing of human plasma fibrinogen on polished, chemically etched and carbon treated titanium surfaces by diffractive optical element based sensor.

    PubMed

    Silvennoinen, Raimo; Vetterl, Vladimir; Hason, Stanislav; Tuononen, Heikki; Silvennoinen, Martti; Myller, Kari; Cvrcek, Ladislav; Vanek, Jiri; Prachar, Patrik

    2008-07-01

    Adsorption of human plasma fibrinogen (HPF) on 6 differently treated titanium samples (polished, polished and etched, and 4 titanium carbide coatings samples produced by using plasma-enhanced chemical vapour deposition (PECVD) method) is investigated by using diffractive optical element (DOE) sensor. Permittivity (susceptibility) change and fluctuation in optical roughness (R(opt)) of treated titanium surface in the presence of background electrolyte without and with HPF molecules are sensed by using DOE sensor and optical ellipsometry. Correlation between transmitted light and thickness of molecule layer was found. The findings allow to sense temporal organization and severity of adsorption of nano-scale HPF molecules on polished, on polished and etched, and on titanium carbide surface.

  2. Electrochemical characteristics of plasma-etched black silicon as anodes for Li-ion batteries

    SciTech Connect

    Lee, Gibaek; Wehrspohn, Ralf B.; Schweizer, Stefan L.

    2014-11-01

    Nanostructured silicon as an anode material for Li-ion batteries is produced for the first time by inductively coupled plasma–plasma etching of Si wafers in the black silicon regime. The microscopic structure strongly resembles other types of nanostructured silicon, with a well-arranged nanostructure possessing a sufficient porosity for accommodating large volume expansion. Despite these features, however, a high first-cycle irreversible capacity loss and a poor cycle life are observed. The main reason for these poor features is the formation of a thick solid-electrolyte interphase (SEI) layer related to the surface condition of the pristine nanostructured black silicon (b-Si) electrode. Therefore, the cycle life of the b-Si electrode is heavily influenced by the constant reformation of the SEI layer depending upon the surface composition in spite of the presence of nanostructured Si. In the fast lithiation experiments, the nanostructure region of the b-Si electrode is detached from the Si substrate owing to the kinetics difference between the lithium ion diffusion and the electron injection and phase transformation in the nanostructured Si region. This means that more Si substrate is involved in lithiation at high current rates. It is therefore important to maintain balance in the chemical kinetics during the lithiation of nanostructured Si electrodes with a Si substrate.

  3. Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

    NASA Astrophysics Data System (ADS)

    Tinck, S.; Boullart, W.; Bogaerts, A.

    2011-08-01

    In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

  4. Synergistic Effect of Atmospheric Pressure Plasma Pre-Treatment on Alkaline Etching of Polyethylene Terephthalate Fabrics and Films

    NASA Astrophysics Data System (ADS)

    A. Elabid Amel, E.; Guo, Ying; Shi, Jianjun; Ding, Ke; Zhang, Jing

    2016-04-01

    Dyeing of PET materials by traditional methods presents several problems. Plasma technology has received enormous attention as a solution for the environmental problems related with textile surface modifications, and there has been a rapid development and commercialization of plasma technology over the past decade. In this work, the synergistic effect of atmospheric pressure plasma on alkaline etching and deep coloring of dyeing properties on polyethylene terephthalate (PET) fabrics and films was investigated. The topographical changes of the PET surface were investigated by atomic force microscopy (AFM) images, which revealed a smooth surface morphology of the untreated sample whereas a high surface roughness for the plasma and/or alkaline treated samples. The effects of atmospheric pressure plasma on alkaline etching of the structure and properties of PET were investigated by means of differential scanning calorimetry (DSC), the main objective of performing DSC was to investigate the effect of the plasma pre-treatment on the Tg and Tm. Using a tensile strength tester YG065H and following a standard procedure the maximum force and elongation at maximum force of PET materials was investigated. Oxygen and argon plasma pre-treatment was found to increase the PET fabric weight loss rate. The color strength of PET fabrics was increased by various plasma pre-treatment times. The penetration of plasma and alkaline reactive species deep into the PET structure results in better dyeability and leaves a significant effect on the K/S values of the plasma pre-treated PET. It indicated that plasma pre-treatment has a great synergistic effect with the alkaline treatment of PET.

  5. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon

    NASA Astrophysics Data System (ADS)

    Tinck, Stefan; Bogaerts, Annemie

    2016-06-01

    In this work, the role of vibrationally excited HBr (HBr(vib)) is computationally investigated for a HBr/He inductively coupled plasma applied for Si etching. It is found that at least 50% of all dissociations of HBr occur through HBr(vib). This additional dissociation pathway through HBr(vib) makes the plasma significantly more atomic. It also results in a slightly higher electron temperature (i.e. about 0.2 eV higher compared to simulation results where HBr(vib) is not included), as well as a higher gas temperature (i.e. about 50 K higher than without including HBr(vib)), due to the enhanced Franck–Condon heating through HBr(vib) dissociation, at the conditions investigated. Most importantly, the calculated etch rate with HBr(vib) included in the model is a factor 3 higher than in the case without HBr(vib), due to the higher fluxes of etching species (i.e. H and Br), while the chemical composition of the wafer surface shows no significant difference. Our calculations clearly show the importance of including HBr(vib) for accurate modeling of HBr-containing plasmas.

  6. Residue-free reactive ion etching of 3C-SiC and 6H-SiC in fluorinated mixture plasmas

    SciTech Connect

    Yih, P.H.; Steckl, A.J.

    1995-08-01

    The authors report on residue-free reactive ion etching (RIE) of 3C-SiC and 6H-SiC in mixtures of fluorinated gases consisting of a primary (CHF{sub 3}) and a secondary gas (CF{sub 4}, NF{sub 3}, and SF{sub 6}). The corresponding etch rate, etched surface morphology, anisotropic profile, and process reproducibility are obtained at different levels of CHF{sub 3}. The advantage of this approach is to eliminate gas additives (H{sub 2} and O{sub 2}) while maintaining the residue-free RIE and high process portability. The effect of SiC doping concentration and dopant type on obtaining residue-free RIE is reported along with the effects of plasma pressure and RF power. Etching mechanisms, plasma chemistry, and optimized etching conditions are also discussed.

  7. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

    PubMed

    Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

    2016-05-01

    In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern. PMID:27483889

  8. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching.

    PubMed

    Zhang, Haoran; Zhang, Yanhui; Zhang, Yaqian; Chen, Zhiying; Sui, Yanping; Ge, Xiaoming; Yu, Guanghui; Jin, Zhi; Liu, Xinyu

    2016-02-21

    During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that illustrate the changes of the graphene edge during cooling. PMID:26866950

  9. Selective plasma etching of ZrO{sub x} to Si using inductively coupled BCl{sub 3}/C{sub 4}F{sub 8} plasmas

    SciTech Connect

    Park, S.D.; Lim, J.H.; Oh, C.K.; Lee, H.C.; Yeom, G.Y.

    2006-02-27

    In this study, the etch characteristics of ZrO{sub x} and the etch selectivity to Si were investigated using BCl{sub 3}/C{sub 4}F{sub 8} plasmas. The etching mechanism was also investigated. Increasing the C{sub 4}F{sub 8} percentage to 4% formed a C-F polymer layer on the silicon surface due to the increased flux ratio of CF{sub x}/F to the substrate, while no such C-F polymer was formed on the ZrO{sub x} surface due to the removal of carbon from CF{sub x} by the oxygen in ZrO{sub x}. By using 3-4% C{sub 4}F{sub 8} in the BCl{sub 3}/C{sub 4}F{sub 8} mixture, infinite etch selectivity of ZrO{sub x} to silicon and photoresist could be obtained while maintaining the ZrO{sub x} etch rate above 400 A/min.

  10. Pulse-biased etching of Si3N4-layer in capacitively-coupled plasmas for nano-scale patterning of multi-level resist structures.

    PubMed

    Lee, Hyelim; Kim, Sechan; Choi, Gyuhyun; Lee, Nae-Eung

    2014-12-01

    Pulse-biased plasma etching of various dielectric layers is investigated for patterning nano-scale, multi-level resist (MLR) structures composed of multiple layers via dual-frequency, capacitively-coupled plasmas (CCPs). We compare the effects of pulse and continuous-wave (CW) biasing on the etch characteristics of a Si3N4 layer in CF4/CH2F2/O2/Aretch chemistries using a dual-frequency, superimposed CCP system. Pulse-biasing conditions using a low-frequency power source of 2 MHz were varied by controlling duty ratio, period time, power, and the gas flow ratio in the plasmas generated by the 27.12 MHz high-frequency power source. Application of pulse-biased plasma etching significantly affected the surface chemistry of the etched Si3N4 surfaces, and thus modified the etching characteristics of the Si3N4 layer. Pulse-biased etching was successfully applied to patterning of the nano-scale line and space pattern of Si3N4 in the MLR structure of KrF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer/Si3N4. Pulse-biased etching is useful for tuning the patterning of nano-scale dielectric hard-mask layers in MLR structures. PMID:25971085

  11. Realization of thermally durable close-packed 2D gold nanoparticle arrays using self-assembly and plasma etching

    NASA Astrophysics Data System (ADS)

    Sivaraman, Sankar K.; Santhanam, Venugopal

    2012-06-01

    Realization of thermally and chemically durable, ordered gold nanostructures using bottom-up self-assembly techniques are essential for applications in a wide range of areas including catalysis, energy generation, and sensing. Herein, we describe a modular process for realizing uniform arrays of gold nanoparticles, with interparticle spacings of 2 nm and above, by using RF plasma etching to remove ligands from self-assembled arrays of ligand-coated gold nanoparticles. Both nanoscale imaging and macroscale spectroscopic characterization techniques were used to determine the optimal conditions for plasma etching, namely RF power, operating pressure, duration of treatment, and type of gas. We then studied the effect of nanoparticle size, interparticle spacing, and type of substrate on the thermal durability of plasma-treated and untreated nanoparticle arrays. Plasma-treated arrays showed enhanced chemical and thermal durability, on account of the removal of ligands. To illustrate the application potential of the developed process, robust SERS (surface-enhanced Raman scattering) substrates were formed using plasma-treated arrays of silver-coated gold nanoparticles that had a silicon wafer or photopaper as the underlying support. The measured value of the average SERS enhancement factor (2 × 105) was quantitatively reproducible on both silicon and paper substrates. The silicon substrates gave quantitatively reproducible results even after thermal annealing. The paper-based SERS substrate was also used to swab and detect probe molecules deposited on a solid surface.

  12. Modification of surface energy, dry etching, and organic film removal using atmospheric-pressure pulsed-corona plasma

    SciTech Connect

    Yamamoto, Toshiaki; Newsome, J.R.; Ensor, D.S.

    1995-05-01

    A laboratory-scale atmospheric-pressure plasma reactor, using a nanosecond pulsed corona, was constructed to demonstrate potential applications ranging from modification of surface energy to removal of surface organic films. For surface modification studies, three different substrates were selected to evaluate the surface energies: bare aluminum, polyurethane, and silicon coated with photoresist. The critical surface energy for all materials studied significantly increased after the plasma treatment. The effects of gas composition and plasma treatment time were also investigated. Photoresist, ethylene glycol, and Micro surfactant were used as test organic films. The etching rate of a photoresist coating on silicon was 9 nm/min. Organic film removal using atmospheric pressure plasma technology was shown to be feasible.

  13. Galileo plasma wave observations of iogenic hydrogen

    NASA Astrophysics Data System (ADS)

    Chust, T.; Roux, A.; Perraut, S.; Louarn, P.; Kurth, W. S.; Gurnett, D. A.

    1999-10-01

    The Galileo plasma wave instrument has detected intense electromagnetic wave emissions approximately centered on the second and fourth harmonics of the local proton gyrofrequency during the close equatorial flyby of Io on 7 December 1995. Their frequencies suggest these emissions are likely generated locally by an instability driven by non thermal protons. Given that this process occurs close to Io, we suggest that hydrogen-bearing compounds, escaping from Io, are broken up/ionized near this moon, thereby releasing protons. Newly-created protons are thus injected in the Jovian corotating plasma with the corotation velocity, leading to the formation of a ring in velocity space. Several electromagnetic wave-particle instabilities can be driven by a ring of newborn protons. Given that the corotating plasma is sub-Alfvénic relative to Io, the magnetosonic mode cannot be destabilized by this proton ring. The full dispersion relation is studied using the WHAMP program ( Rönmark, 1982. Rep. 179. Kiruna Geophys. Inst., Kiruna, Sweden) as well as a new algorithm that allows us to fit the distribution function of newborn protons in a more realistic way. This improvement in the ring model is necessary to explain the relative narrowness of the observed spectral peaks. The measured E/ B ratio is also used to identify the relevant instability and wave mode: this mode results from the coupling between the ion Bernstein and the ion cyclotron mode (IBCW). To our knowledge this mode has not yet been studied. From the instability threshold an estimate of the density of newborn protons around Io is thus given; at about 2 Io radii from the surface and 40°W longitude from the sub-Jupiter meridian, this density is found to be ≥0.5% of the local plasma density (˜4000 cm -3), namely ≥20 cm -3. Assuming a stationary pickup process and a r- n distribution of pickup protons within several Io radii of Io's wake, this implies that more than 10 26 protons/s are created around Io. The

  14. Sparse field level set method for non-convex Hamiltonians in 3D plasma etching profile simulations

    NASA Astrophysics Data System (ADS)

    Radjenović, Branislav; Lee, Jae Koo; Radmilović-Radjenović, Marija

    2006-01-01

    Level set method [S. Osher, J. Sethian, J. Comput. Phys. 79 (1988) 12] is a highly robust and accurate computational technique for tracking moving interfaces in various application domains. It originates from the idea to view the moving front as a particular level set of a higher dimensional function, so the topological merging and breaking, sharp gradients and cusps can form naturally, and the effects of curvature can be easily incorporated. The resulting equations, describing interface surface evolution, are of Hamilton-Jacobi type and they are solved using techniques developed for hyperbolic equations. In this paper we describe an extension of the sparse field method for solving level set equations in the case of non-convex Hamiltonians, which are common in the simulations of the profile surface evolution during plasma etching and deposition processes. Sparse field method itself, developed by Whitaker [R. Whitaker, Internat. J. Comput. Vision 29 (3) (1998) 203] and broadly used in image processing community, is an alternative to the usual combination of narrow band and fast marching procedures for the computationally effective solving of level set equations. The developed procedure is applied to the simulations of 3D feature profile surface evolution during plasma etching process, that include the effects of ion enhanced chemical etching and physical sputtering, which are the primary causes of the Hamiltonian non-convexity.

  15. Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

    NASA Astrophysics Data System (ADS)

    Shen, Lanlan; Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Cheng, Yan; Lv, Shilong; Wu, Liangcai; Liu, Bo; Feng, Songlin

    2016-09-01

    Recently, carbon-doped Ge2Sb2Te5 (CGST) phase change material has been widely researched for being highly promising material for future phase change memory application. In this paper, the reactive-ion etching of CGST film in CF4/Ar plasma is studied. Compared with GST, the etch rate of CGST is relatively lower due to the existence of carbon which reduce the concentration of F or CF x reactive radicals. It was found that Argon plays an important role in defining the sidewall edge acuity. Compared with GST, more physical bombardment is required to obtain vertical sidewall of CGST. The effect of fluorocarbon gas on the damage of the etched CGST film was also investigated. A Ge- and Sb-deficient layer with tens of nanometers was observed by TEM combining with XPS analysis. The reaction between fluorocarbon plasma and CGST is mainly dominated by the diffusion and consumption of reactive fluorine radicals through the fluorocarbon layer into the CGST substrate material. The formation of damage layer is mainly caused by strong chemical reactivity, low volatility of reaction compounds and weak ion bombardment.

  16. Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation

    NASA Astrophysics Data System (ADS)

    Tinck, Stefan; Tillocher, Thomas; Dussart, Rémi; Neyts, Erik C.; Bogaerts, Annemie

    2016-09-01

    Experiments show that the etch rate of Si with SF6 inductively coupled plasma (ICP) is significantly influenced by the absolute gas flow rate in the range of 50-600 sccm, with a maximum at around 200 sccm. Therefore, we numerically investigate the effects of the gas flow rate on the bulk plasma properties and on the etch rate, to obtain more insight in the underlying reasons of this effect. A hybrid Monte Carlo—fluid model is applied to simulate an SF6 ICP. It is found that the etch rate is influenced by two simultaneous effects: (i) the residence time of the gas and (ii) the temperature profile of the plasma in the ICP volume, resulting indeed in a maximum etch rate at 200 sccm.

  17. Growth of graphene on Cu foils by microwave plasma chemical vapor deposition: The effect of in-situ hydrogen plasma post-treatment

    NASA Astrophysics Data System (ADS)

    Fang, Liping; Yuan, Wen; Wang, Bing; Xiong, Ying

    2016-10-01

    Microwave plasma chemical vapor deposition (MPCVD) is a promising method for the large-scale production of high-quality graphene. The aim of this work is to investigate the effect of in-situ hydrogen plasma post-treatment on the MPCVD-grown graphene films. By simply varying the duration time of in-situ hydrogen plasma, surface morphology, number of layers and defect density of as-grown graphene films can be manipulated. The role of hydrogen plasma can be proposed from our observations, promoting to further grow graphene films in the early stage and consequently acting as an etching agent to thin graphene films in the later stage. On the basis of above mechanism, monolayer graphene films with low defect density and smooth surface can be grown by adjusting the times of the growing step and the plasma post-treatment step. This additional in-situ hydrogen plasma post-treatment may be significant for growing well-defined graphene films with controllable defects and number of layers.

  18. Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Gex surfaces

    NASA Astrophysics Data System (ADS)

    Wilde, Markus; Fukutani, Katsuyuki; Koh, Shinji; Sawano, Kentarou; Shiraki, Yasuhiro

    2005-07-01

    This study investigates the stability of surface hydride layers passivating silicon-germanium alloys against contamination in ambient conditions after treatment in dilute hydrofluoric acid (HF), which is of central importance to the fabrication of SiGe-based semiconductor devices. We report quantitative hydrogen coverages on HF-etched Si(1-x)Gex surfaces (x=0,0.30,0.60,0.82), determined after air-to-vacuum transfer by H-specific H1(N15,αγ)C12 nuclear reaction analysis. Combination of this coverage information with analysis of the zero-point vibrational properties and N15-ion-induced desorption kinetics of the surface H atoms enables the distinction of well-passivated SiGe surfaces terminated exclusively by hydrides of Si and Ge from those partially covered by contaminating adsorbates. It is found that the resistance of HF-etched Si(1-x)Gex alloys against recontamination is drastically reduced at increasing Ge contents. Pure Si(100)-H is stably passivated at least up to 1week in air by a layer of 1.3±0.1 monolayer total H coverage. Si0.70Ge0.30 initially resembles H-passivated Si(100) but shows indications of moderate contamination after 1week in air. The HF treatment does not produce stable passivation layers on Ge-rich alloys (x⩾0.60), which suffer heavy recontamination within minutes after removal from the HF solution.

  19. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.

    PubMed

    Lee, Junmyung; Efremov, Alexander; Yeom, Geun Young; Lim, Nomin; Kwon, Kwang-Ho

    2015-10-01

    An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was performed. It was found that the variations in the CF4/C4F8 mixing ratio in the range of 0-50% at a constant Ar fraction of 50% resulted in slightly non-monotonic Si and SiO2 etching rates in CF4-rich plasmas and greatly decreasing etching rates in C4F8-rich plasmas. The zero-dimensional plasma model, Langmuir probe diagnostics, and optical emission spectroscopy provided information regarding the formation-decay kinetics for the plasma active species, along with their densities and fluxes. The model-based analysis of the etching kinetics indicated that the non-monotonic etching rates were caused not by the similar behavior of the fluorine atom density but rather by the opposite changes of the fluorine atom flux and ion energy flux. It was also determined that the great decrease in both the Si and SiO2 etching rates during the transition from the CF4/Ar to C4F8/Ar gas system was due to the deposition of the fluorocarbon polymer film. PMID:26726514

  20. Efficient design of experiments for complex response surfaces with application to etching uniformity in a plasma reactor

    NASA Astrophysics Data System (ADS)

    Tatavalli Mittadar, Nirmal

    Plasma etching uniformity across silicon wafers is of paramount importance in the semiconductor industry. The complexity of plasma etching, coupled with lack of instrumentation to provide real-time process information (that could be used for feedback control), necessitate that optimal conditions for uniform etching must be designed into the reactor and process recipe. This is often done empirically using standard design of experiments which, however, are very costly and time consuming. The objective of this study was to develop a general purpose efficient design strategy that requires a minimum number of experiments, and can handle complex constraints in the presence of uncertainties. Traditionally, Response Surface Methodology (RSM) is used in these applications to design experiments to determine the optimal value of decision variables or inputs. We demonstrated that standard RSM, when applied to the problem of plasma etching uniformity, has the following drawbacks (1) inefficient search due to process nonlinearities, (2) lack of converge to the optimum, and, (3) inability to handle complex inequality constraints. We developed a four-phase Efficient Design Strategy (EDS) based on the DACE paradigm (Design and Analysis of Computer Experiments) and Bayesian search algorithms. The four phases of EDS are: (1) exploration of the design space by maximizing information, (2) exploration of the design space for feasible points by maximizing probability of constraint satisfaction, (3) optimization of the objective and (4) constrained local search. We also designed novel algorithms to switch between the different phases. The choice of model parameters for DACE predictors is usually determined by the Maximum Likelihood Estimation (MLE) method. Depending on the dataset, MLE could result in unrealistic predictors that show a peak-and-dip behavior. To solve this problem we developed techniques to detect the presence of peak-and-dip behavior and a new scheme based on Maximum a

  1. SiN etching characteristics of Ar/CH3F/O2 plasma and dependence on SiN film density

    NASA Astrophysics Data System (ADS)

    Ohtake, Hiroto; Wanifuchi, Tomiko; Sasaki, Masaru

    2016-08-01

    We evaluated the silicon nitride (SiN) etching characteristics of Ar/O2/hydrofluorocarbon plasma. Ar/CH3F/O2 plasma achieved a high etching selectivity of SiN to SiO2 by increasing the oxygen flow rate. We also evaluated the dependence of SiN etching characteristics on SiN film density. A low-density film deposited at a low temperature of 200 °C (by plasma-enhanced CVD, PECVD) showed an 8–20% lower etching rate of SiN than a high-density film deposited at a high temperature of 780 °C (by low-pressure CVD, LPCVD) when we had a low RF bias of 30 W. This PECVD film might move the competitive balance to oxidation from fluorination, reducing the SiN etching rate. However, when we have a high RF bias of more than 50 W, the SiN etching rate is 2–15% higher in the PECVD film than in the LPCVD film. The etching rate of SiN at various densities depends on the balance between oxidation and ion bombardment.

  2. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films.

    PubMed

    Zhou, H P; Xu, M; Xu, S; Liu, L L; Liu, C X; Kwek, L C; Xu, L X

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  3. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films

    PubMed Central

    Zhou, H. P.; Xu, M.; Xu, S.; Liu, L. L.; Liu, C. X.; Kwek, L. C.; Xu, L. X.

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  4. Surface kinetics modeling of silicon and silicon oxide plasma etching. III. Modeling of silicon oxide etching in fluorocarbon chemistry using translating mixed-layer representation

    SciTech Connect

    Kwon, Ohseung; Bai Bo; Sawin, Herbert H.

    2006-09-15

    Silicon oxide etching was modeled using a translating mixed-layer model, a novel surface kinetic modeling technique, and the model showed good agreement with measured data. Carbon and fluorine were identified as the primary contributors to deposition and etching, respectively. Atomic fluorine flux is a major factor that determines the etching behavior. With a chemistry having a small amount of atomic fluorine (such as the C{sub 4}F{sub 8} chemistry), etching yield shows stronger dependence on the composition change in the gas flux.

  5. Hydrogen uptake into silicon from an ECR plasma

    SciTech Connect

    Wampler, W.R.; Barbour, J.C.

    1993-12-01

    The concentration of hydrogen in solution near the surface of silicon exposed to an electron cyclotron resonance (ECR) plasma was determined by measuring the flux of hydrogen permeating to subsurface microcavities. The energy and flux of hydrogen impinging onto the surface from the plasma was also measured. A model is described which predicts the concentration of hydrogen in solution from the energy and flux of the impinging hydrogen. The measured solution concentrations were {approximately}10{sup {minus}9} H/Si at 600{degrees}C and {approximately}10{sup {minus}8} H/Si at 400{degrees}C, in fairly good agreement with the model. The absence of accumulation of immobile hydrogen near the surface indicates that lattice defects, which strongly trap hydrogen, were not produced by the ECR plasma. This study establishes a connection between the properties of the ECR plasma and the concentration of hydrogen in silicon samples exposed to the plasma, which allows improved control over passivation of defects and dopants.

  6. Effect of argon addition on plasma parameters and dust charging in hydrogen plasma

    SciTech Connect

    Kakati, B. Kausik, S. S.; Saikia, B. K.; Bandyopadhyay, M.; Saxena, Y. C.

    2014-10-28

    Experimental results on effect of adding argon gas to hydrogen plasma in a multi-cusp dusty plasma device are reported. Addition of argon modifies plasma density, electron temperature, degree of hydrogen dissociation, dust current as well as dust charge. From the dust charging profile, it is observed that the dust current and dust charge decrease significantly up to 40% addition of argon flow rate in hydrogen plasma. But beyond 40% of argon flow rate, the changes in dust current and dust charge are insignificant. Results show that the addition of argon to hydrogen plasma in a dusty plasma device can be used as a tool to control the dust charging in a low pressure dusty plasma.

  7. Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Matsumoto, Haruka; Eriguchi, Koji; Ono, Kouichi

    2015-09-01

    In the microfabrication of 3D transistors (e.g. Fin-FET), the sidewall roughness, such as LER and LWR caused by off-normal or oblique ion incidence during plasma etching, is a critical issue to be resolved, which in turn requires a better understanding of the effects of ion incidence angle θi on surface roughening. This paper presents surface roughening and rippling by oblique ion incidence during inductively coupled plasma etching of Si in Cl2, using the experimental setup as in our previous study. The oblique ion incidence was achieved by sheath control plates, which were placed on and electrically connected to the wafer stage. The plates had slits to vary the sheath structure thereon and to extract ions from plasma to samples on the bottom and/or side of the slits. The results indicated that at θi ~ 40° or oblique incidence; ripple structures were formed on surfaces perpendicularly to the direction of ion incidence, on the other hand, at θi ~ 80° or grazing incidence, small ripples or slit like grooves were formed on surfaces parallel to the direction of ion incidence, as predicted in our previous numerical investigations.

  8. Plasma-chemical conversion of hydrogen sulfide into hydrogen and sulfur

    SciTech Connect

    Harkness, J.B.L.; Doctor, R.D.; Daniels, E.J.

    1993-09-01

    A waste-treatment process that recovers both hydrogen and sulfur from hydrogen-sulfide-contaminated industrial wastes is being developed to replace the Claus technology, which recovers only sulfur. The proposed process is based on research reported in the Soviet technical literature and uses microwave (or radio-frequency) energy to initiate plasma-chemical reactions that dissociate hydrogen sulfide into elemental hydrogen and sulfur. In the plasma-chemical process, the gaseous stream would be purified and separated into streams containing the product hydrogen, hydrogen sulfide for recycle to the plasma reactor, and the process purge containing carbon dioxide and water. Since unconverted hydrogen sulfide is recycled to the plasma reactor, the plasma-chemical process has the potential for sulfur recoveries in excess of 99% without the additional tail-gas clean-up processes associated with the Claus technology. Laboratory experiments with pure hydrogen sulfide have confirmed that conversions of over 90% per pass are possible. Experiments with impurities typical of petroleum refinery and natural gas production acid gases have demonstrated that these impurities are compatible with the plasma dissociation process and do not appear to create new waste-treatment problems. Other experiments show that the cyclonic-flow pattern hypothesized by the Russian theoretical analysis of the plasma-chemical process can substantially decrease energy requirements for hydrogen sulfide dissociation while increasing conversion. This process has several advantages over the current Claus-plus-tail-gas-cleanup technology. The primary advantage is the potential for recovering hydrogen more cheaply than the direct production of hydrogen. The difference could amount to an energy savings of 40 {times} 10{sup 15} to 70 {times} 10{sup 15} J/yr in the refining industry, for an annual savings of $500 million to $1,000 million.

  9. Effects of Macroscopic Pattern Density and O2 Addition on Chamber Stability during Silicon Nitride Layer Etching in UNITY II-IEM Plasma Source

    NASA Astrophysics Data System (ADS)

    Back, Woon Suck; Kim, Kil Ho; Kim, Jong Il; Lee, Joon Hyun; Won, Yong Sik; Choi, Seon Ho; Hwang, Chung Ho; Lee, Dai Hoon

    2002-04-01

    Effects of the wafer level pattern density on chamber particle generation during silicon nitride (Si3N4) layer etching have been studied in the medium density plasma source, UNITY II-IEM. It was found that the macroscopic pattern density of the etched layer strongly affects the etching environment and subsequently affects the chamber stability. The abrupt change in the macroscopic pattern density of the etched layer, especially when the pattern density is lowered, can sometimes results in the hazardous chamber particle generation. Experiments were performed in order to cope with the chamber particle generation induced by the macroscopic pattern density variation. Controlling the F/C ratio within the plasma by varying the amount of feeding O2 gas was proven to be an efficient way to prevent the occurrence of the chamber particles. Based on our experimental results, the mechanism for the chamber particle generation and that for the reduction will be discussed.

  10. Microwave plasma generation of hydrogen atoms for rocket propulsion

    NASA Technical Reports Server (NTRS)

    Chapman, R.; Filpus, J.; Morin, T.; Snellenberger, R.; Asmussen, J.; Hawley, M.; Kerber, R.

    1981-01-01

    A flow microwave plasma reaction system is used to study the conversion of hydrogen to hydrogen atoms as a function of pressure, power density, cavity tuning, cavity mode, and time in the plasma zone. Hydrogen atom concentration is measured down-stream from the plasma by NOCl titration. Extensive modeling of the plasma and recombination zones is performed with the plasma zone treated as a backmix reaction system and the recombination zone treated as a plug flow. The thermodynamics and kinetics of the recombination process are examined in detail to provide an understanding of the conversion of recombination energy to gas kinetic energy. It is found that cavity tuning, discharge stability, and optimum power coupling are critically dependent on the system pressure, but nearly independent of the flow rate.

  11. Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.

    PubMed

    James, Teena; Kalinin, Yevgeniy V; Chan, Chih-Chieh; Randhawa, Jatinder S; Gaevski, Mikhail; Gracias, David H

    2012-07-11

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP)-assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and cone-angles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations.

  12. Atomic layer etching of SiO2 under Ar/ C4F8 plasmas with pulsed bias

    NASA Astrophysics Data System (ADS)

    Zhang, Sai-Qian; Dai, Zhong-Ling; Wang, You-Nian; Plasma Simulation; Experiment Group (PSEG) Team

    2015-09-01

    The purge steps in the atomic layer etching (ALE) reduce the throughput and increase the costs. By elaborately choosing bias pulse waveforms, ALE can be achieved without alternating feedstock gas, although compromises are needed between throughput and precision. In this study, a multi-scale model is used to simulate ALE of SiO2 with a pulsed bias in Ar/C4F8 plasmas. Firstly, a commercial software CFD-ACE + is used to calculate the reactant fluxes towards the substrate in a CCP reactor. The ion bombardment energy and angular distributions at substrate are calculated with a hybrid sheath model, where electric field is got from fluid equations, and the ion-neutral collisions are considered applying the Monte Carlo(MC) method. Then, the reactant transport and surface MC reaction algorithm are coupled in a feature scale model. Influences of bias pulse frequency and duty ratio on atomic precision control are studied. Also, comparisons are made between conventional ALE and pulsed bias etching. Results show that when pulsed bias is used instead of alternating the feedstock gas, we can still achieve certain self-limiting nature in etching, with higher throughput and acceptable loss of precision. Supported by National Natural Science Foundation of China (No. 11375040).

  13. A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Sui, Jiaxing; Zhang, Saiqian; Liu, Zeng; Yan, Jun; Dai, Zhongling

    2016-06-01

    A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO2 in inductively coupled C4F8 plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-ACE+ commercial software. Then, the ion energy and angular distributions (IEDs and IADs) are obtained in the sheath model with the sheath boundary conditions provided with CFD-ACE+. Finally, the trench profile evolution is simulated in the trench model. What we principally focus on is the effects of the discharge parameters on the etching results. It is found that the discharge parameters, including discharge pressure, radio-frequency (rf) power, gas mixture ratios, bias voltage and frequency, have synergistic effects on IEDs and IADs on the etched material surface, thus further affecting the trench profiles evolution. supported by National Natural Science Foundation of China (No. 11375040) and the Important National Science & Technology Specific Project of China (No. 2011ZX02403-002)

  14. Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C4F8 and Ar/CHF3 Plasma

    DOE PAGESBeta

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L; Joseph, Eric A; Oehrlein, Gottlieb S

    2016-09-08

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32, 020603 (2014), and D.more » Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are

  15. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

    NASA Astrophysics Data System (ADS)

    Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

    2016-10-01

    In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

  16. Feedback control of HfO{sub 2} etch processing in inductively coupled Cl{sub 2}/N{sub 2}/Ar plasmas

    SciTech Connect

    Lin Chaung; Leou, K.-C.; Li, T.-C.; Lee, L.-S.; Tzeng, P.-J.

    2008-09-15

    The etch rate of HfO{sub 2} etch processing has been feedback controlled in inductively coupled Cl{sub 2}/N{sub 2}/Ar plasmas. The ion current and the root mean square rf voltage on the wafer stage, which are measured using a commercial impedance meter connected to the wafer stage, are chosen as controlled variables because the positive-ion flux and ion energy incident upon the wafer surface are the key factors that determine the etch rate. Two 13.56 MHz rf generators are used to adjust the inductively coupled plasma power and bias power which control ion density and ion energy, respectively. The adopted HfO{sub 2} etch processing used rather low rf voltage. The ion-current value obtained by the power/voltage method is underestimated, so the neural-network model was developed to assist estimating the correct ion-current value. The experimental results show that the etch-rate variation of the closed-loop control is smaller than that of the open-loop control. However, the first wafer effect cannot be eliminated using closed-loop control and thus to achieve a constant etch rate, the chamber-conditioning procedure is required in this etch processing.

  17. Investigation of InP etching mechanisms in a Cl{sub 2}/H{sub 2} inductively coupled plasma by optical emission spectroscopy

    SciTech Connect

    Gatilova, L.; Bouchoule, S.; Guilet, S.; Chabert, P.

    2009-03-15

    Optical emission spectroscopy (OES) has been used in order to investigate the InP etching mechanisms in a Cl{sub 2}-H{sub 2} inductively coupled plasma. The authors have previously shown that anisotropic etching of InP could be achieved for a H{sub 2} percentage in the 35%-45% range where the InP etch rate also presents a local maximum [J. Vac. Sci. Technol. B 24, 2381 (2006)], and that anisotropic etching was due to an enhanced passivation of the etched sidewalls by a silicon oxide layer [J. Vac. Sci. Technol. B 26, 666 (2008)]. In this work, it is shown that this etching behavior is related to a maximum in the H atom concentration in the plasma. The possible enhancement of the sidewall passivation process in the presence of H is investigated by comparing OES measurements and etching results obtained for Cl{sub 2}-H{sub 2} and Cl{sub 2}-Ar gas mixtures.

  18. Effect of Cl{sub 2}- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    SciTech Connect

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-05-15

    A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.

  19. Etching characteristics and mechanism of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films in inductively coupled Cl{sub 2}/Ar plasma

    SciTech Connect

    Min, Nam-Ki; Efremov, Alexander; Kim, Yun-Ho; Kim, Mansu; Park, Hyung-Ho; Lee, Hyun Woo; Kwon, Kwang-Ho

    2008-03-15

    This work reports the investigations of both etch characteristics and mechanisms for the Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) thin films in the Cl{sub 2}/Ar inductively coupled plasma. The GST etch rates and etch selectivities over SiO{sub 2} were measured as functions of the Cl{sub 2}/Ar mixing ratio (43%-86% Ar), gas pressure (4-10 mTorr), and source power (400-700 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters and behaviors of plasma active species. From the model-based analysis of surface kinetics, it was found that with variations of the Cl{sub 2}/Ar mixing ratio and gas pressure, the GST etch rate follows the changes of Cl atom density and flux but contradicts with those for positive ions. The GST etch mechanism in the Cl{sub 2}-containing plasmas represents a combination of spontaneous and ion-assisted chemical reactions with no limitation by ion-surface interaction kinetics such as physical sputtering of the main material or the ion-stimulated desorption of low volatile reaction products.

  20. Effect of gas mixing ratio on etch behavior of ZrO{sub 2} thin films in Cl{sub 2}-based inductively coupled plasmas

    SciTech Connect

    Efremov, Alexander; Min, Nam-Ki; Yun, Sun Jin; Kwon, Kwang-Ho

    2008-11-15

    The analysis of the ZrO{sub 2} thin film etch mechanism in the Cl{sub 2}/Ar, Cl{sub 2}/He, and Cl{sub 2}/N{sub 2} inductively coupled plasmas was carried out. It was found that an increase in additive gas fraction at fixed gas pressure and input power results in increasing ZrO{sub 2} etch rate, which changes from 1.2 nm/min for pure Cl{sub 2} plasma up to 3.15, 2.40, and 2.31 nm/min for 80% Ar, N{sub 2}, and He, respectively. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics are noticeably influenced by the initial composition of the gas mixture. From the model-based analysis of etch kinetics, it was shown that, similarly to the case of BCl{sub 3}-based plasmas, the behavior of the ZrO{sub 2} etch rate corresponds to the ion-flux-limited etch regime.

  1. Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application

    SciTech Connect

    Lee, J. H.; Kim, M. J.; Yoon, Y. S.

    2013-04-15

    The floating harmonic method was developed for in situ plasma diagnostics of allowing real time measurement of electron temperature (T{sub e}) and ion flux (J{sub ion}) without contamination of the probe from surface modification by reactive species. In this study, this novel non-invasive diagnostic system was studied to characterize inductively coupled plasma of reactive gases monitoring T{sub e} and J{sub ion} for investigating the optimum plasma etching conditions and controlling of the real-time plasma surface reaction in the range of 200-900 W source power, 10-100 W bias power, and 3-15 mTorr chamber pressure, respectively.

  2. Resonances in positron-hydrogen scattering in dense quantum plasmas

    SciTech Connect

    Jiang, Zishi; Zhang, Yong-Zhi; Kar, Sabyasachi

    2015-05-15

    We have investigated the S-wave resonance states in positron-hydrogen system embedded in dense quantum plasmas using Hylleraas-type wave functions within the framework of the stabilization method. The effect of quantum plasmas has been incorporated using the exponential-cosine-screened Coulomb (modified Yukawa-type) potential. Resonance parameters (both position and width) below the Ps n = 2 threshold are reported as functions of plasma screening parameters.

  3. Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance.

    PubMed

    Smyrnakis, A; Almpanis, E; Constantoudis, V; Papanikolaou, N; Gogolides, E

    2015-02-27

    In this work we investigate both experimentally and theoretically the optical properties of aligned, perpendicular to the substrate, high aspect ratio (AR), plasma etched Si nanowires (SiNWs) with controlled variability. We focus on the role of imperfections in fabrication, which manifest themselves as dimensional variability of SiNW, lattice defects or positional randomization. SiNW arrays are fabricated by e-beam lithography (perfectly ordered array) or colloidal particle self-assembly (quasi-ordered array) followed by cryogenic Si plasma etching, which offers fast etch rate (up to 3 μm min(-1)) combined with clean, smooth, and controllable sidewall profile, but induces some dimensional variability on the diameters of the SiNWs. Sub-200 nm diameter SiNWs having AR as high as 37:1 are demonstrated. The total reflectance of SiNWs is below 2% in a wide range of the optical spectrum. We experimentally demonstrate improved light absorption when moving from a perfectly ordered (after e-beam lithography) to a defective and quasi-ordered (after colloidal self-assembly) SiNW array. In addition our measured reflectivity (for both ordered and quasi-ordered SiNWs) is much lower compared to the one predicted theoretically for a perfect SiNWs array, using full-electrodynamic calculations with the layer-multiple-scattering method. To explain such low reflectivity, we model the influence of disorder using the average T-matrix approximation and show that even small dimensional variability (10-20%) leads to dramatic reduction of the reflectance (matching the experimental results) and increased light trapping inside the SiNW justifying their possible application in photovoltaic devices. PMID:25648611

  4. Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance

    NASA Astrophysics Data System (ADS)

    Smyrnakis, A.; Almpanis, E.; Constantoudis, V.; Papanikolaou, N.; Gogolides, E.

    2015-02-01

    In this work we investigate both experimentally and theoretically the optical properties of aligned, perpendicular to the substrate, high aspect ratio (AR), plasma etched Si nanowires (SiNWs) with controlled variability. We focus on the role of imperfections in fabrication, which manifest themselves as dimensional variability of SiNW, lattice defects or positional randomization. SiNW arrays are fabricated by e-beam lithography (perfectly ordered array) or colloidal particle self-assembly (quasi-ordered array) followed by cryogenic Si plasma etching, which offers fast etch rate (up to 3 μm min-1) combined with clean, smooth, and controllable sidewall profile, but induces some dimensional variability on the diameters of the SiNWs. Sub-200 nm diameter SiNWs having AR as high as 37:1 are demonstrated. The total reflectance of SiNWs is below 2% in a wide range of the optical spectrum. We experimentally demonstrate improved light absorption when moving from a perfectly ordered (after e-beam lithography) to a defective and quasi-ordered (after colloidal self-assembly) SiNW array. In addition our measured reflectivity (for both ordered and quasi-ordered SiNWs) is much lower compared to the one predicted theoretically for a perfect SiNWs array, using full-electrodynamic calculations with the layer-multiple-scattering method. To explain such low reflectivity, we model the influence of disorder using the average T-matrix approximation and show that even small dimensional variability (10-20%) leads to dramatic reduction of the reflectance (matching the experimental results) and increased light trapping inside the SiNW justifying their possible application in photovoltaic devices.

  5. Non-thermal atmospheric pressure plasma etching of F:SnO2 for thin film photovoltaics.

    PubMed

    Hodgkinson, J L; Thomson, M; Cook, I; Sheel, D W

    2011-09-01

    Thin film based photovoltaic systems offer significant advantage over wafer based technologies enabling the use of low cost, large area substrates such as glass, greatly facilitating the construction and integration of large modules. The viability of such systems has advanced in recent years, with researchers striving to optimise performance through the development of materials and cell design. One way to improve efficiency is to texture the interface between the TCO and the absorber layer to maximise scattering over the appropriate wavelength range, with nanometre scale features such as pyramids being reported as giving high scatter. These textures may be achieved by advanced growth processes, such as CVD, post growth etching or a combination of both. In this work, textured F:SnO2 films produced by APCVD were favourably modified using a remote, non thermal, atmospheric plasma to activate a selective dry etch process resulting in significantly enhanced topography. Uniform treatment of the samples was achieved by translation of the samples below the plasma head. Advantages of this approach, compared to competitive technologies such as wet chemical processes, are the relatively low power consumption and ease of scalability and retroprocess integration. The modified structures were studied using AFM, SEM and EDAX, with the observed topography controlled by process variables. Optical properties were assessed along with Hall measurements.

  6. An interatomic potential model for molecular dynamics simulation of silicon etching by Br{sup +}-containing plasmas

    SciTech Connect

    Ohta, H.; Iwakawa, A.; Eriguchi, K.; Ono, K.

    2008-10-01

    An interatomic potential model for Si-Br systems has been developed for performing classical molecular dynamics (MD) simulations. This model enables us to simulate atomic-scale reaction dynamics during Si etching processes by Br{sup +}-containing plasmas such as HBr and Br{sub 2} plasmas, which are frequently utilized in state-of-the-art techniques for the fabrication of semiconductor devices. Our potential form is based on the well-known Stillinger-Weber potential function, and the model parameters were systematically determined from a database of potential energies obtained from ab initio quantum-chemical calculations using GAUSSIAN03. For parameter fitting, we propose an improved linear scheme that does not require any complicated nonlinear fitting as that in previous studies [H. Ohta and S. Hamaguchi, J. Chem. Phys. 115, 6679 (2001)]. In this paper, we present the potential derivation and simulation results of bombardment of a Si(100) surface using a monoenergetic Br{sup +} beam.

  7. Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

    SciTech Connect

    Uchida, Saburo; Takashima, Seigo; Hori, Masaru; Fukasawa, Masanaga; Ohshima, Keiji; Nagahata, Kazunori; Tatsumi, Tetsuya

    2008-04-01

    Low dielectric constant (low-k) films have been widely used as insulating materials in ultra-large-scale integrated circuits. Low-k films receive heavy damage during the plasma processes of etching or ashing, resulting in an increase in their dielectric constant. In order to realize damage-free plasma processes for low-k films, it is essential to determine the influence of radiation, radicals, and ions emitted in the plasma process on the characteristics of low-k films. We have developed a technique to evaluate the influence of radiation, radicals, ions, and their synergies on films in real plasma processes and have named it pallet for plasma evaluation (PAPE). Using the PAPE, plasma-induced damage on porous SiOCH films were investigated in dual-frequency capacitively coupled H{sub 2}/N{sub 2} plasmas. The damage was characterized by ellipsometry, Fourier-transform infrared spectroscopy, and thermal desorption spectroscopy. On the basis of the results, the damage mechanisms associated with vacuum ultraviolet (VUV) and UV radiation, radicals, and ions were clarified. The damage was caused not only by ions and radicals but also by VUV and UV radiation emitted by the plasmas. Moreover, it was found that the synergy between the radiation and the radicals enhanced the damage.

  8. Pulsed two-frequency capacitively coupled plasma simulation with H_2/N2 mixtures for the etching of low-k materials

    NASA Astrophysics Data System (ADS)

    Shon, C. H.; Makabe, T.

    2002-10-01

    As the critical dimension of integrated circuit is scaled down, the resistance-capacitance (RC) delay of signals through interconnection materials becomes important. As a solution, the new materials like Cu and low-k dielectric polymers have been used to reduce the signal delay in interconnect. As a result, low-k materials etching becomes a big issue in the plasma etching process. In this research, we present the simulation results of a pulsed two-frequency capacitively coupled plasma (2f-CCP)[1,2] based on relaxation continuum (RCT) model[3,4] in H_2/N2 mixtures. The electrons, ions of each gas and NHx radicals are followed in the model. The characteristics of a pulsed plasma are investigated. In addition, the flux of ions and radicals toward the biased substrate which has great importance in etching process is also discussed. sep = -1mm [[1

  9. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE PAGESBeta

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore » critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  10. Characterization of hydrogen-plasma interactions with photoresist, silicon, and silicon nitride surfaces

    SciTech Connect

    Thedjoisworo, Bayu A.; Cheung, David; Zamani, Davoud

    2012-05-15

    For the 45 nm technology node and beyond, a major challenge is to achieve reasonably high photoresist ash rates while minimizing the loss of the silicon (Si) substrate and its nitride (Si{sub 3}N{sub 4}). Accordingly, an objective of this work is to characterize the photoresist strip rate under varying conditions of H{sub 2} plasma and the effects of these conditions on Si and Si{sub 3}N{sub 4} etch rates. In addition, we discuss in detail the fundamental mechanisms of the reactions between H atoms and the above substrates and successfully reconcile the process trends obtained with the reaction mechanisms. In this work, photoresist, Si, and Si{sub 3}N{sub 4} films were exposed to downstream pure-H{sub 2} discharges and their removal rates were characterized by ellipsometry as a function of the following parameters: substrate temperature, reactor pressure, H{sub 2} flow rate, and source power. The authors found that the H{sub 2}-based dry ash and Si{sub 3}N{sub 4} etch are both thermally activated reactions, evidenced by the steady increase in etch rate as a function of temperature, with activation energies of {approx}5.0 and {approx}2.7 kcal/mol, respectively. The Si substrate exhibits a rather unique behavior where the etch rate increases initially to a maximum, which occurs at {approx}40 deg. C, and then decreases upon a further increase in temperature. The decrease in the Si etch rate at higher temperatures is attributed to the activation of competing side reactions that consume the chemisorbed H atoms on the Si surface, which then suppresses the Si-etch step. The photoresist and Si{sub 3}N{sub 4} removal rates increase initially with increasing pressure, reaching maxima at {approx}800 and 2000 mTorr, respectively, beyond which the removal rates drop with increasing pressure. The initial increase in removal rate at the low-pressure regime is attributed to the increased atomic-hydrogen density, whereas the decrease in ash rate at the high-pressure regime could be

  11. Quadrupole photoionization of hydrogen atoms in Debye plasmas

    SciTech Connect

    Lin, C. Y.; Ho, Y. K.

    2010-09-15

    Although a great deal of effort has been devoted to investigating dipole photoionization of plasma-embedded atoms, far less is known about the corresponding quadrupole transitions. In the present work, quadrupole photoionization processes for the ground and excited states of hydrogen atoms in Debye plasma are explored using the method of complex coordinate rotation. The plasma shielding effects on the quadrupole photoionization cross sections are reported for a variety of Debye screening lengths and compared to the dipole results accordingly. Under the perturbation of plasma screening, shape resonances and Cooper-type minima occurring in both dipole and quadrupole photoionization cross sections are presented and discussed. Comparisons are made to other theoretical calculations for the dipole photoionization with good agreement. The present quadrupole results are the first predictions for hydrogen photoionization in Debye plasmas.

  12. In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO{sub 2}

    SciTech Connect

    Gerung, Henry; Brinker, C. Jeffrey; Brueck, Steven R.J.; Han, Sang M.

    2005-03-01

    We have employed attenuated total reflection Fourier transforms infrared spectroscopy (ATR-FTIRS) to monitor the profile evolution of patterned mesoporous, low-dielectric-constant SiO{sub 2} films in situ and in real time during plasma etching. A stack of patterned photoresist, anti-reflective coating, and mesoporous SiO{sub 2} is etched in an inductively coupled plasma reactor, using CHF{sub 3} and Ar. During etching, the IR absorbance of Si-O-Si stretching modes near 1080 cm{sup -1} decreases, and the rate of decrease in Si-O-Si absorbance translates to the SiO{sub 2} removal rate. When corrected for the exponentially decaying evanescent electric field, the removal rate helps monitor the profile evolution and predict the final etch profile. The predicted profiles are in excellent agreement with the cross-sectional images taken by scanning electron microscopy. In a similar approach, we calculate the absolute total number of C-F bonds in the sidewall passivation and observe its formation rate as a function of time. Assuming that the thickness of the sidewall passivation tapers down towards the trench bottom, we deduce that C-F formation occurs mostly in the final stage of etching when the trench bottom meets the Ge ATR crystal and that a critical amount of C-F buildup is necessary to maintain the anisotropic etch profile.

  13. Effect of gas mixing ratio on etch behavior of ZrO{sub 2} thin films in BCl{sub 3}/He inductively coupled plasma

    SciTech Connect

    Kim, Mansu; Min, Nam-Ki; Yun, Sun Jin; Lee, Hyun Woo; Efremov, Alexander; Kwon, Kwang-Ho

    2008-05-15

    This article reports a study carried out on a model-based analysis of the etch mechanism for ZrO{sub 2} thin films in a BCl{sub 3}/He inductively coupled plasma. It was found that an increase in the He mixing ratio at a fixed gas pressure and input power results in an increase in the ZrO{sub 2} etch rate, which changes from 36 to 57 nm/min for 0-83% He. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics were noticeably influenced by the initial composition of the BCl{sub 3}/He mixture, resulting in the nonmonotonic or nonlinear behaviors of species densities. Using the model-based analysis of etch kinetics, it was demonstrated that the behavior of the ZrO{sub 2} etch rate corresponds to the ion-flux-limited etch regime of the ion-assisted chemical reaction.

  14. Plasma Effects on the Metastable Neutral HYDROGEN(2S) Atom.

    NASA Astrophysics Data System (ADS)

    Benage, John Ferns, Jr.

    Atomic radiative processes which occur in plasmas have long been of interest of plasma physicists. The process we are investigating is atomic dipole transitions, specifically transitions from the metastable 2s to the 2p in hydrogen, which are induced by processes which occur in the plasma. An experiment was done to measure the rate of transitions from 2s to 2p in hydrogen. This experiment was divided into two sections. The first was to measure the transition rate in a near equilibrium plasma. The second section measured the transition rate when RF oscillations were imposed on the plasma. The results of the first part of the experiment show that microscopic fluctuating electric fields which are produced by the motions of the charged particles induce transitions from 2s to 2p in hydrogen. The magnitude of this effect is compared to predicted transition rates due to collisions with electrons and ions and to rates predicted for an equilibrium plasma. In the second part of the experiment, the plasma was shown to act as a filter, preventing transitions from being caused by the RF unless the RF was in the range where plasma waves could be launched. The interpretation we give for this effect is that when the oscillations are inducing transitions, it is because plasma waves are being launched in the plasma and it is these waves which are inducing the transitions. These results have a couple of important applications. The results for the equilibrium part of the experiment can be used to explain a limit in the current which is produced by the Lamb-shift polarized ion source. The other important application is the possible use of the effect seen in the RF case as a non-perturbing diagnostic for plasma waves. Since dipole transition rates are proportional to E('2) and very sensitive near resonance, this effect could prove to be more accurate and more sensitive than methods currently used.

  15. Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

    PubMed

    Kim, Nam Hun; Jeon, Min Hwan; Kim, Tae Hyung; Yeom, Geun Young

    2015-11-01

    The characteristics of embedded pulse plasma using 60 MHz radio frequency as the source power and 2 MHz radio frequency as the bias power were investigated for the etching of SiO2 masked with an amorphous carbon layer (ACL) using an Ar/C4F8/O2 gas mixture. Especially, the effects of the different pulse duty ratio of the embedded dual-frequency pulsing between source power and bias power on the characteristics on the plasma and SiO2 etching were investigated. The experiment was conducted by varying the source duty percentage from 90 to 30% while bias duty percentage was fixed at 50%. Among the different duty ratios, the source duty percentage of 60% with the bias duty percentage of 50% exhibited the best results in terms of etch profile and etch selectivity. The change of the etch characteristics by varying the duty ratios between the source power and bias power was believed to be related to the different characteristics of gas dissociation, fluorocarbon passivation, and ion bombardment observed during the different source/bias pulse on/off combinations. In addition, the instantaneous high electron temperature peak observed during each initiation of the source pulse-on period appeared to affect the etch characteristics by significant gas dissociation. The optimum point for the SiO2 etching with the source/bias pulsed dual-frequency capacitively coupled plasma system was obtained by avoiding this instant high electron temperature peak while both the source power and bias power were pulsed almost together, therefore, by an embedded RF pulsing. PMID:26726572

  16. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

    SciTech Connect

    King, Sean W. Tanaka, Satoru; Davis, Robert F.; Nemanich, Robert J.

    2015-09-15

    Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

  17. Plasma etched surface scanning inspection recipe creation based on bidirectional reflectance distribution function and polystyrene latex spheres

    NASA Astrophysics Data System (ADS)

    Saldana, Tiffany; McGarvey, Steve; Ayres, Steve

    2014-04-01

    The continual increasing demands upon Plasma Etching systems to self-clean and continue Plasma Etching with minimal downtime allows for the examination of SiCN, SiO2 and SiN defectivity based upon Surface Scanning Inspection Systems (SSIS) wafer scan results. Historically all Surface Scanning Inspection System wafer scanning recipes have been based upon Polystyrene Spheres wafer deposition for each film stack and the subsequent creation of light scattering sizing response curves. This paper explores the feasibility of the elimination of Polystyrene Latex Sphere (PSL) and/or process particle deposition on both filmed and bare Silicon wafers prior to Surface Scanning Inspection System recipe creation. The study will explore the theoretical maximal Surface Scanning Inspection System sensitivity based on PSL recipe creation in conjunction with the maximal sensitivity derived from Bidirectional Reflectance Distribution Function (BRDF) maximal sensitivity modeling recipe creation. The surface roughness (Root Mean Square) of plasma etched wafers varies dependent upon the process film stack. Decrease of the root mean square value of the wafer sample surface equates to higher surface scanning inspection system sensitivity. Maximal sensitivity SSIS scan results from bare and filmed wafers inspected with recipes created based upon Polystyrene/Particle Deposition and recipes created based upon BRDF modeling will be overlaid against each other to determine maximal sensitivity and capture rate for each type of recipe that was created with differing recipe creation modes. A statistically valid sample of defects from each Surface Scanning Inspection system recipe creation mode and each bare wafer/filmed substrate will be reviewed post SSIS System processing on a Defect Review Scanning Electron Microscope (DRSEM). Native defects, Polystyrene Latex Spheres will be collected from each statistically valid defect bin category/size. The data collected from the DRSEM will be utilized to

  18. Three-Dimensional Polymeric Mechanical Metamaterials Fabricated by Multibeam Interference Lithography with the Assistance of Plasma Etching.

    PubMed

    Kang, Da-Young; Lee, Wooju; Kim, Dongchoul; Moon, Jun Hyuk

    2016-08-23

    The pentamode structure is a type of mechanical metamaterial that displays dramatically different bulk and shear modulus responses. In this study, a face-centered cubic (FCC) polymeric microstructure was fabricated by using SU8 negative-type photoresists and multibeam interference exposure. Isotropic plasma etching is used to control the solid-volume fraction; for the first time, we obtained a structure with the minimum solid-volume fraction as low as 15% that still exhibited high structural integrity. Using this method, we reduced the width of atom-to-atom connections by up to 40 nm. We characterize the effect of the connection area on the anisotropy of the mechanical properties using simulations. Nanoindentation measurements were also conducted to evaluate the energy dissipation by varying the connection area. The Young's/shear modulus ratio is 5 times higher for the etched microstructure than that of the bulk SU8 materials. The use of interference lithography may enable the properties of microscale materials to be engineered for various applications, such as MEMS. PMID:27466084

  19. Transfer of micro-optical structures into GaAs by use of inductively coupled plasma dry etching.

    PubMed

    Karlsson, Mikael; Nikolajeff, Fredrik

    2002-02-10

    The transfer of continuous-relief micro-optical structures from resist into GaAs by the use of direct-write electron-beam (e-beam) lithography followed by dry etching in an inductively coupled plasma is demonstrated. BCl3-Ar chemistry was found to give satisfactory results; N2 and Cl2 were added to change the selectivity between GaAs and e-beam resist. The transfer process generates smooth etched structures. Distortion of the diffractive structures in the transfer process was examined. Blazed gratings with a period of 10 microns were optically evaluated with a 940-nm VCSEL. This grating was a five-step approximation of a blazed profile. The diffraction efficiency was 67% in the first order, with a theoretical value of 87%. Also, simulations of the optical performance of the transferred diffractive elements were made by use of a Fourier transform of the grating profile. Our goal is to integrate micro-optical structures with VCSELs. PMID:11908218

  20. Three-Dimensional Polymeric Mechanical Metamaterials Fabricated by Multibeam Interference Lithography with the Assistance of Plasma Etching.

    PubMed

    Kang, Da-Young; Lee, Wooju; Kim, Dongchoul; Moon, Jun Hyuk

    2016-08-23

    The pentamode structure is a type of mechanical metamaterial that displays dramatically different bulk and shear modulus responses. In this study, a face-centered cubic (FCC) polymeric microstructure was fabricated by using SU8 negative-type photoresists and multibeam interference exposure. Isotropic plasma etching is used to control the solid-volume fraction; for the first time, we obtained a structure with the minimum solid-volume fraction as low as 15% that still exhibited high structural integrity. Using this method, we reduced the width of atom-to-atom connections by up to 40 nm. We characterize the effect of the connection area on the anisotropy of the mechanical properties using simulations. Nanoindentation measurements were also conducted to evaluate the energy dissipation by varying the connection area. The Young's/shear modulus ratio is 5 times higher for the etched microstructure than that of the bulk SU8 materials. The use of interference lithography may enable the properties of microscale materials to be engineered for various applications, such as MEMS.

  1. A structure zone diagram including plasma based deposition and ion etching

    SciTech Connect

    Anders, Andre

    2009-10-14

    An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

  2. Temperature dependence on dry etching of Al{sub 2}O{sub 3} thin films in BCl{sub 3}/Cl{sub 2}/Ar plasma

    SciTech Connect

    Yang Xue; Kim, Dong-Pyo; Um, Doo-Seung; Kim, Gwan-Ha; Kim, Chang-Il

    2009-07-15

    During the etching process, the wafer surface temperature is an important parameter which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the redeposition of reaction products on feature surfaces. In this study, the authors investigated that the effect of substrate temperature on the etch rate of Al{sub 2}O{sub 3} thin film and selectivity of Al{sub 2}O{sub 3} thin film over hard mask material (such as SiO{sub 2}) thin film in inductively coupled plasma as functions of Cl{sub 2} addition in BCl{sub 3}/Ar plasma, rf power, and dc-bias voltage based on the substrate temperature in range of 10-80 degree sign C. The elements existed on the surface were analyzed by energy dispersive x-ray and x-ray photoelectron spectroscopy.

  3. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    NASA Astrophysics Data System (ADS)

    Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.

    2016-08-01

    Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  4. Atomic Hydrogen Measurements in a Fusion-Relevant Plasma

    NASA Astrophysics Data System (ADS)

    Samuell, Cameron; Corr, Cormac

    2012-10-01

    Critical to the success of large-scale fusion reactors is the development of new materials that can withstand the extreme conditions at the plasma-surface boundary. The materials required for plasma-facing components will need to withstand a very aggressive environment that is characterized by both a high heat load and high ion flux produced by the hydrogen isotope plasma. As such, investigating the ways in which hydrogen plasmas interact with a range of materials is an important area for research and development and is vital to the future success of fusion. A new experimental reactor, the MAGnetized Plasma Interaction Experiment (MAGPIE), has been constructed at the Australian National University to help resolve some of the critical issues surrounding the choice of fusion reactor materials. MAGPIE is a linear system with a 2.5kW, 13.56MHz helicon source that operates in a magnetic hill configuration with field strengths up to 0.19T. Densities up to 10^19m-3 at temperatures < 5eV have been achieved. The focus of this presentation is the interaction between a magnetized hydrogen plasma and tungsten and graphite targets in MAGPIE. Results from two-photon absorption laser induced fluorescence (TALIF), optical emission spectroscopy (OES) and probe diagnostics will be presented.

  5. Measurement of energy distribution in flowing hydrogen microwave plasmas

    NASA Technical Reports Server (NTRS)

    Chapman, R.; Morin, T.; Finzel, M.; Hawley, M. C.

    1985-01-01

    An electrothermal propulsion concept utilizing a microwave plasma system as the mechanism to convert electromagnetic energy into kinetic energy of a flowing gas is investigated. A calorimetry system enclosing a microwave plasma system has been developed to accurately measure the energy inputs and outputs of the microwave plasma system. The rate of energy transferred to the gas can be determined to within + or - 1.8 W from an energy balance around the microwave plasma system. The percentage of the power absorbed by the microwave plasma system transferred to the hydrogen gas as it flows through the system is found to increase with the increasing flow rate, to decrease with the increasing pressure, and to be independent of the absorbed power. An upper bound for the hydrogen gas temperature is estimated from the energy content, heat capacity, and flow rate of the gas stream. A lower bound for an overall heat-transfer coefficient is then calculated, characterizing the energy loss from the hydrogen gas stream to the air cooling of the plasma discharge tube wall. The heat-transfer coefficient is found to increase with the increasing flow rate and pressure and to be independent of the absorbed power. This result indicates that a convective-type mechanism is responsible for the energy transfer.

  6. Plasma etching of Hf-based high-k thin films. Part I. Effect of complex ions and radicals on the surface reactions

    SciTech Connect

    Martin, Ryan M.; Chang, Jane P.

    2009-03-15

    The effect of ion and radical compositions in BCl{sub 3}/Cl{sub 2} plasmas was assessed in this work with a focus on the formation of etch products in patterning hafnium aluminate, a potential high-k gate oxide material. The plasma composition became increasingly more complex as the percentage of boron trichloride was increased, which led to the formation of a significant amount of boron-containing species including B{sup +}, BCl{sup +}, BCl{sub 2}{sup +}, BCl{sub 3}{sup +}, B{sub 2}Cl{sub 3}{sup +}, and B{sub 2}OCl{sub 3}{sup +} in the plasma. The BCl{sub 2}{sup +} ions were found to be the dominant species in BCl{sub 3} containing plasmas at most conditions; however, increasing the pressure or decreasing the power led to an increase in the formation of higher mass ions. Several compositions of Hf{sub 1-x}Al{sub x}O{sub y} thin films ranging from pure HfO{sub 2} to pure Al{sub 2}O{sub 3} were etched in BCl{sub 3}/Cl{sub 2} plasmas as functions of ion energy and plasma composition. The etch product distributions were measured and the dominant metal-containing etch products were HfCl{sub x} and AlCl{sub x} in a Cl{sub 2} plasma and HfCl{sub x}, HfBOCl{sub 4}, and Al{sub x}Cl{sub y} in a BCl{sub 3} plasma, and their concentrations increased with increasing ion energy. Oxygen was detected removed in the form of ClO in Cl{sub 2} and as trichloroboroxin ((BOCl){sub 3}) in BCl{sub 3}. Both the etch rate and the etch product formation are enhanced in BCl{sub 3}/Cl{sub 2} plasmas, as compared to those in Cl{sub 2} plasmas, due to the change in the composition and reactivity of the dominant ions and radicals.

  7. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    NASA Astrophysics Data System (ADS)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  8. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F{sub 2} remote plasmas

    SciTech Connect

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-07-15

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F{sub 2} remote plasmas. N{sub 2} and N{sub 2}+O{sub 2} gases in the F{sub 2}/Ar/N{sub 2} and F{sub 2}/Ar/N{sub 2}/O{sub 2} remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N{sub 2} and N{sub 2}+O{sub 2} or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N{sub 2}O and NO{sub 2} by-products, respectively, and thereby enhancing SiF{sub 4} formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature.

  9. Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance-voltage measurements and simulations

    NASA Astrophysics Data System (ADS)

    Jo, Yeong-Deuk; Koh, Jung-Hyuk; Ha, Jae-Geun; Kim, Ji-Hong; Cho, Dae-Hyung; Moon, Byung-Moo; Koo, Sang-Mo

    2009-12-01

    Au/SiO2/n-Si metal-oxide-silicon-on-insulator (MOSOI) capacitors were fabricated to study the damage caused by reactive ion etching (RIE) on (1 1 0) oriented silicon-on-insulator (SOI) substrates. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measurements revealed that C-V curves significantly change and a negative voltage shift occurs for plasma-damaged capacitors. The simulated band diagram profiles and potential distribution of the corresponding structures indicate that the C-V shift is mainly due to the removal of a parasitic depletion capacitance (Cp) in the substrate, when the interface charges (Qf) are present at the gate oxide/SOI interface. For etch-damaged MOSOI samples, the surface roughness and the interface charges (Qf) have been found to increase by ~1.94 × 1012 cm-2 with respect to the reference devices, whereas the increase was reduced for sacrificial-oxidation treated samples, which implies a recovery from the plasma-induced etch damage on SOI structures.

  10. Measurement of Neutral Hydrogen Density in a Helicon Plasma

    NASA Astrophysics Data System (ADS)

    Galante, M. E.; Magee, R. M.; McCarren, D. W.; Scime, E. E.; Brooks, N. H.; Boivin, R. L.

    2011-10-01

    A new diagnostic system based on two-photon absorption laser-induced fluorescence (TALIF) has been developed to measure neutral hydrogen density in the edge of fusion plasmas. 205 nm photons from a frequency tripled dye laser are injected co-propagating into the plasma chamber where they excite the 1s-3D transition in neutral hydrogen. The 3D state then decays emitting light at 656 nm. The emission intensity is directly proportional to the ground state hydrogen density. With the tabulated atomic absorption rates for hydrogen and krypton, TALIF measurements of krypton gas provide an absolute calibration. Here we present the technical details and measured performance of the TALIF system (laser line width, pulse length, pulse energy, RMS stability) and TALIF measurements of room temperature krypton gas. The krypton measurements are compared to expectations and the measured line widths are analyzed in terms of Doppler and saturation broadening. We also present TALIF measurements of the radial profiles of the absolute neutral hydrogen and neutral temperature in a helicon plasma source as a function of source parameters. Work supported in part by US DOE under DE-FC02-04ER54698.

  11. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

    NASA Astrophysics Data System (ADS)

    Dussart, R.; Tillocher, T.; Lefaucheux, P.; Boufnichel, M.

    2014-03-01

    The evolution of silicon cryoetching is reported in this topical review, from its very first introduction by a Japanese team to today's advanced technologies. The main advances in terms of the performance and comprehension of the mechanisms are chronologically presented. After presenting the principle of silicon cryoetching, the main defects encountered in cryoetching (such as undercut, bowing and crystal orientation dependent etching) are presented and discussed. Mechanisms involved in SiOxFy passivation layer growth in standard cryoetching are investigated through several in situ characterization experiments. The STiGer process and alternative cryoetching processes for high-aspect-ratio structures are also proposed to enhance the process robustness. The over-passivation regime, which can provide self-organized columnar microstructures, is presented and discussed. Finally, advanced technologies, such as the cryoetching of sub-20 nm features and porous OSG low-k cryoetching, are described.

  12. Negative hydrogen ion yields at plasma grid surface in a negative hydrogen ion source

    SciTech Connect

    Wada, M.; Kenmotsu, T.; Sasao, M.

    2015-04-08

    Negative hydrogen (H{sup −}) ion yield from the plasma grid due to incident hydrogen ions and neutrals has been evaluated with the surface collision cascade model, ACAT (Atomic Collision in Amorphous Target) coupled to a negative surface ionization models. Dependence of negative ion fractions upon the velocity component normal to the surface largely affect the calculation results of the final energy and angular distributions of the H{sup −} ions. The influence is particularly large for H{sup −} ions desorbed from the surface due to less than several eV hydrogen particle implact. The present calculation predicts that H{sup −} ion yield can be maximized by setting the incident angle of hydrogen ions and neutrals to be 65 degree. The Cs thickness on the plasma grid should also affect the yields and mean energies of surface produced H{sup −} ions by back scattering and ion induced desorption processes.

  13. Positron scattering from hydrogen atom embedded in dense quantum plasma

    SciTech Connect

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2013-08-15

    Scattering of positrons from the ground state of hydrogen atoms embedded in dense quantum plasma has been investigated by applying a formulation of the three-body collision problem in the form of coupled multi-channel two-body Lippmann-Schwinger equations. The interactions among the charged particles in dense quantum plasma have been represented by exponential cosine-screened Coulomb potentials. Variationally determined hydrogenic wave function has been employed to calculate the partial-wave scattering amplitude. Plasma screening effects on various possible mode of fragmentation of the system e{sup +}+H(1s) during the collision, such as 1s→1s and 2s→2s elastic collisions, 1s→2s excitation, positronium formation, elastic proton-positronium collisions, have been reported in the energy range 13.6-350 eV. Furthermore, a comparison has been made on the plasma screening effect of a dense quantum plasma with that of a weakly coupled plasma for which the plasma screening effect has been represented by the Debye model. Our results for the unscreened case are in fair agreement with some of the most accurate results available in the literature.

  14. Dry-etching properties of TiN for metal/high-k gate stack using BCl{sub 3}-based inductively coupled plasma

    SciTech Connect

    Kim, Dong-Pyo; Yang Xue; Woo, Jong-Chang; Um, Doo-Seung; Kim, Chang-Il

    2009-11-15

    The etch rate of TiN film and the selectivities of TiN/SiO{sub 2} and TiN/HfO{sub 2} were systematically investigated in Cl{sub 2}/BCl{sub 3}/Ar plasmas as functions of Cl{sub 2} flow rate, radio-frequency (rf) power, and direct-current (dc) bias voltage under different substrate temperatures of 10 and 80 degree sign C. The etch rate of TiN films increased with increasing Cl{sub 2} flow rate, rf power, and dc-bias voltage at a fixed substrate temperature. In addition, the etch rate of TiN films at 80 degree sign C were higher than that at 10 degree sign C when other plasma parameters were fixed. However, the selectivities of TiN/SiO{sub 2} and TiN/HfO{sub 2} showed different tendencies compared with etch-rate behavior as a function of rf power and dc bias voltage. The relative-volume densities of Ar (750.0 nm), Cl (725.2 nm), and Cl{sup +} (386.6 nm) were monitored with an optical-emission spectroscopy. When rf power increased, the relative-volume densities of all studied particles were increased. X-ray photoelectron spectroscopy was carried out to detect nonvolatile etch by-products from the surface, and nonvolatile peaks (TiCl{sub x} bonds) in Ti 2p and Cl 2p were observed due to their high melting points. Based on the experimental results, we can conclude that the TiN etch is dependent on the substrate temperature when other plasma parameters are fixed. This can be explained by the enhanced chemical pathway with the assistance of ion bombardment.

  15. Influence of the reactor wall composition on radicals' densities and total pressure in Cl{sub 2} inductively coupled plasmas: II. During silicon etching

    SciTech Connect

    Cunge, G.; Sadeghi, N.; Ramos, R.

    2007-11-01

    In an industrial inductively coupled plasma reactor dedicated to silicon etching in chlorine-based chemistry, the density of Cl{sub 2} molecules and the gas temperature are measured by means of laser absorption techniques, the density of SiCl{sub x} (x{<=}2) radicals by broadband absorption spectroscopy, the density of SiCl{sub 4} and ions by mass spectrometry, and the total gas pressure with a capacitance gauge. These measurements permit us to estimate the mole fractions of Cl, SiCl{sub 4}, and etch product radicals when etching a 200 mm diameter silicon wafer. The pure Cl{sub 2} plasma is operated in well prepared chamber wall coating with a thin film of SiOCl, AlF, CCl, or TiOCl. The impact of the chemical nature of the reactor wall's coatings on these mole fractions is studied systematically. We show that the reactor wall coatings have a huge influence on the radicals densities, but this is not only from the difference on Cl-Cl recombination coefficient on different surfaces. During silicon etching, SiCl{sub x} radicals sticking on the reactor walls are etched by Cl atoms and recycled into the plasma by forming volatile SiCl{sub 4}. Hence, the loss of Cl atoms in etching the wall deposited silicon is at least as important as their wall recombination in controlling the Cl atoms density. Furthermore, because SiCl{sub 4} is produced at high rate by both the wafer and reactor walls, it is the predominant etching product in the gas phase. However, the percentage of redeposited silicon that can be recycled into the plasma depends on the amount of oxygen present in the plasma: O atoms produced by etching the quartz roof window fix Si on the reactor walls by forming a SiOCl deposit. Hence, the higher the O density is, the lower the SiCl{sub 4} density will be, because silicon is pumped by the reactor walls and the SiOCl layer formed is not isotropically etched by chlorine. As a result, in the same pure Cl{sub 2} plasma at 20 mTorr, the SiCl{sub x} mole fraction can

  16. Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching

    NASA Astrophysics Data System (ADS)

    Cunge, G.; Sadeghi, N.; Ramos, R.

    2007-11-01

    In an industrial inductively coupled plasma reactor dedicated to silicon etching in chlorine-based chemistry, the density of Cl2 molecules and the gas temperature are measured by means of laser absorption techniques, the density of SiClx (x ⩽2) radicals by broadband absorption spectroscopy, the density of SiCl4 and ions by mass spectrometry, and the total gas pressure with a capacitance gauge. These measurements permit us to estimate the mole fractions of Cl, SiCl4, and etch product radicals when etching a 200mm diameter silicon wafer. The pure Cl2 plasma is operated in well prepared chamber wall coating with a thin film of SiOCl, AlF, CCl, or TiOCl. The impact of the chemical nature of the reactor wall's coatings on these mole fractions is studied systematically. We show that the reactor wall coatings have a huge influence on the radicals densities, but this is not only from the difference on Cl-Cl recombination coefficient on different surfaces. During silicon etching, SiClx radicals sticking on the reactor walls are etched by Cl atoms and recycled into the plasma by forming volatile SiCl4. Hence, the loss of Cl atoms in etching the wall deposited silicon is at least as important as their wall recombination in controlling the Cl atoms density. Furthermore, because SiCl4 is produced at high rate by both the wafer and reactor walls, it is the predominant etching product in the gas phase. However, the percentage of redeposited silicon that can be recycled into the plasma depends on the amount of oxygen present in the plasma: O atoms produced by etching the quartz roof window fix Si on the reactor walls by forming a SiOCl deposit. Hence, the higher the O density is, the lower the SiCl4 density will be, because silicon is pumped by the reactor walls and the SiOCl layer formed is not isotropically etched by chlorine. As a result, in the same pure Cl2 plasma at 20mTorr, the SiClx mole fraction can vary from 18% in a SiOCl-coated reactor, where the O density is the

  17. Diagnostics for hot plasmas using hydrogen neutral beams

    SciTech Connect

    Goldston, R.J.

    1982-12-01

    Beams of neutral hydrogen atoms have found a number of uses in the diagnosis of hot plasmas. In the most straightforward application, neutral beams have been used to determine plasma line density, based on simple attenuation measurements. This technique has been applied most intensively recently to the study of beam-injected mirror plasmas. Neutral beams have also now been used in a number of tokamaks to supply a local increase of the neutral atom target density for charge exchange. By directing a time-modulated neutral beam across the sight-line of a charge-exchange analyzer, and measuring the modulated neutral particle efflux from the plasma, local measurements of the ion energy distribution function can be made. If a modulated diagnostic neutral beam is directed across the sight-line of an ultra-violet spectrometer, one can also make measurements of the local densities and possibly velocity distributions of fully stripped impurities. The fast hydrogen neutrals charge exchange with fully stripped impurities in the plasma, leaving the impurities in excited hydrogen-like states. In their prompt radiative decay the impurity ions emit characteristic uv lines, which can be detected easily.

  18. Charge transfer in proton-hydrogen collisions under Debye plasma

    SciTech Connect

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2015-02-15

    The effect of plasma environment on the 1s → nlm charge transfer, for arbitrary n, l, and m, in proton-hydrogen collisions has been investigated within the framework of a distorted wave approximation. The effect of external plasma has been incorporated using Debye screening model of the interacting charge particles. Making use of a simple variationally determined hydrogenic wave function, it has been possible to obtain the scattering amplitude in closed form. A detailed study has been made to investigate the effect of external plasma environment on the differential and total cross sections for electron capture into different angular momentum states for the incident energy in the range of 20–1000 keV. For the unscreened case, our results are in close agreement with some of the most accurate results available in the literature.

  19. Charge transfer in proton-hydrogen collisions under Debye plasma

    NASA Astrophysics Data System (ADS)

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2015-02-01

    The effect of plasma environment on the 1s → nlm charge transfer, for arbitrary n, l, and m, in proton-hydrogen collisions has been investigated within the framework of a distorted wave approximation. The effect of external plasma has been incorporated using Debye screening model of the interacting charge particles. Making use of a simple variationally determined hydrogenic wave function, it has been possible to obtain the scattering amplitude in closed form. A detailed study has been made to investigate the effect of external plasma environment on the differential and total cross sections for electron capture into different angular momentum states for the incident energy in the range of 20-1000 keV. For the unscreened case, our results are in close agreement with some of the most accurate results available in the literature.

  20. The study of influence of the gas flow rate to etched layer thickness, and roughness of the anisotropy field of gallium arsenide is etched in the plasma chemical etching process

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Klimin, V. S.; Solodovnik, M. S.; Eskov, A. V.; Krasnoborodko, S. Y.

    2016-08-01

    In the experiments on the etched surface of gallium arsenide were performed. We studied the effect of BCl3 gas flow rate on the thickness of the etched layer. GaAs etching rate was: 537,4 nm/min 28,7 nm/min 2,6 nm/min, the values of the flow rate of BCl3 NBCl3 - 15, 10, 5 cc/min, respectively. The effect of BCl3 gas flow rate to the mean-square roughness of the etched surface. The influence of the anisotropy of the process on the geometry of the etched area. Revealed that the deflection angle for the samples treated with the working gas flow rate NBCl3 - 15 cc/min in the [110] direction was α [110] = 65,5° in direction [111] was α [111] = 45,58°. For samples treated with the working gas flow rate NBCl3 - 10 cc/min in the [110] direction was α [110] = 20,94° in direction [111] was α [111] = 11,37°. For samples treated with the working gas flow rate NBCl3 - 5 cc/min in the [110] was α [110] = 0,32° in direction [111] was α [111] = 0,21°. The results can be used to produce discrete diodes, heterojunction devices, and other results.

  1. Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N{sub 2}, O{sub 2} plasmas

    SciTech Connect

    Efremov, Alexander; Kang, Sungchil; Kwon, Kwang-Ho; Seok Choi, Won

    2011-11-15

    Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N{sub 2}, and HBr-O{sub 2} inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0-100% for Ar, N{sub 2}, and O{sub 2} at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using Langmuir probe diagnostics and a global (zero-dimensional) plasma model. The good agreement between the behaviors of the SiC etch rate and the H atom flux could suggest that a chemical etch pathway is rather controlled by the gasification of carbon through the CH{sub x} or CH{sub x}Br{sub y} compounds.

  2. Room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN film prepared via UV-assisted photo-electrochemical etching

    NASA Astrophysics Data System (ADS)

    Quah, Hock Jin; Ahmed, Naser Mahmoud; Zainal, Norzaini; Yam, Fong Kwong; Hassan, Zainuriah; Lim, Way Foong

    2016-07-01

    This paper reports room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN prepared via ultraviolet-assisted photo-electrochemical etching in 1-4% diluted potassium hydroxide (KOH) solution. The highest sensitivity (S), the lowest response time and recovery time were obtained by the 4% KOH etched sample, owing to good adsorption and desorption of adsorbed H atoms over the largest surface area provided by the highest pore density. An increase in forward bias to 2.0 V has enhanced S (98.0%) of the sample while a relatively low bias of 0.5 V was sufficient to yield S of 81.9% in the sample.

  3. Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry

    NASA Astrophysics Data System (ADS)

    Yamada, Takahiro; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2016-02-01

    The density of hydrogen (H) atoms in the narrow-gap microwave hydrogen plasma generated under high-pressure conditions is expected to be very high because of the high input power density of the order of 104 W/cm3. For measuring the H atom density in such a high-pressure and high-density plasma, power-balance calorimetry is suited since a sufficient signal to noise ratio is expected. In this study, H atom density in the narrow-gap microwave hydrogen plasma has been determined by the power-balance calorimetry. The effective input power to the plasma is balanced with the sum of the powers related to the out-going energy per unit time from the plasma region via heat conduction, outflow of high-energy particles, and radiation. These powers can be estimated by simple temperature measurements using thermocouples and optical emission spectroscopy. From the power-balance data, the dissociation fraction of H2 molecules is determined, and the obtained maximum H atom density is (1.3 ± 0.2) × 1018 cm-3. It is found that the H atom density increases monotonically with increasing the energy invested per one H2 molecule within a constant plasma volume.

  4. Etching characteristics of SiC, SiO2, and Si in CF4/CH2F2/N2/Ar inductively coupled plasma: Effect of CF4/CH2F2 mixing ratio

    NASA Astrophysics Data System (ADS)

    Lee, Jongchan; Efremov, Alexander; Kim, Kwangsoo; Kwon, Kwang-Ho

    2016-10-01

    This study investigated the etching characteristics and mechanisms of SiC, Si, and SiO2 in CF4/CH2F2/N2/Ar inductively-coupled plasmas. The investigation showed that a change in the CF4/CH2F2 mixing ratio at fixed N2 and Ar fractions in a feed gas causes a decrease in the etching rates of SiC and Si, but results in an almost constant SiO2 etching rate. Plasma chemistry was analyzed using Langmuir probe diagnostics and optical emission spectroscopy. The good agreement between the behaviors of both the SiC and the Si etching rates with a change in F atom density suggested a neutral-flux-limited etching regime for these materials. On the contrary, the SiO2 etching process appeared in the transitional regime of the ion-assisted chemical reaction and was influenced by both neutral and ion fluxes.

  5. Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

    NASA Astrophysics Data System (ADS)

    Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

    2013-01-01

    Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

  6. Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF{sub 6}

    SciTech Connect

    Draghici, M.; Stamate, E.

    2010-06-15

    Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF{sub 6} gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive and negative ions are evaluated on silicon substrate for different Ar/SF{sub 6} gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions.

  7. Optical emission spectroscopy of argon and hydrogen-containing plasmas

    NASA Astrophysics Data System (ADS)

    Siepa, Sarah; Danko, Stephan; Tsankov, Tsanko V.; Mussenbrock, Thomas; Czarnetzki, Uwe

    2015-09-01

    Optical emission spectroscopy (OES) on neutral argon is applied to investigate argon, hydrogen and hydrogen-silane plasmas. The spectra are analyzed using an extensive collisional-radiative model (CRM), from which the electron density and the electron temperature (or mean energy) can be calculated. The CRM also yields insight into the importance of different excited species and kinetic processes. The OES measurements are performed on pure argon plasmas at intermediate pressure. Besides, hydrogen and hydrogen-silane plasmas are investigated using argon as a trace gas. Especially for the gas mixture discharges, CRMs for low and high pressure differ substantially. The commonly used line-ratio technique is found to lose its sensitivity for gas mixture discharges at higher pressure. A solution using absolutely calibrated line intensities is proposed. The effect of radiation trapping and the shape of the electron energy distribution function on the results are discussed in detail, as they have been found to significantly influence the results. This work was supported by the Ruhr University Research School PLUS, funded by Germany's Excellence Initiative [DFG GSC 98/3].

  8. The hydrogen atom in plasmas with an external electric field

    SciTech Connect

    Bahar, M. K.; Soylu, A.

    2014-09-15

    We numerically solve the Schrödinger equation, using a more general exponential cosine screened Coulomb (MGECSC) potential with an electric field, in order to investigate the screening and weak external electric field effects on the hydrogen atom in plasmas. The MGECSC potential is examined for four different cases, corresponding to different screening parameters of the potential and the external electric field. The influences of the different screening parameters and the weak external electric field on the energy eigenvalues are determined by solving the corresponding equations using the asymptotic iteration method (AIM). It is found that the corresponding energy values shift when a weak external electric field is applied to the hydrogen atom in a plasma. This study shows that a more general exponential cosine screened Coulomb potential allows the influence of an applied, weak, external electric field on the hydrogen atom to be investigated in detail, for both Debye and quantum plasmas simultaneously. This suggests that such a potential would be useful in modeling similar effects in other applications of plasma physics, and that AIM is an appropriate method for solving the Schrödinger equation, the solution of which becomes more complex due to the use of the MGECSC potential with an applied external electric field.

  9. Amphiphobicity of polyvinylidene fluoride porous films after atmospheric pressure plasma intermittent etching

    NASA Astrophysics Data System (ADS)

    Liu, Xuyan; Choi, Ho-Suk; Park, Bo-Ryoung; Lee, Hyung-Keun

    2011-08-01

    This study modified the surface of polyvinylidene fluoride (PVDF) films and characterized their surface physicochemical properties. The main aim of this study was to examine how to provide the surface with a specific property, e.g., not only hydrophobic but also oleophobic (amphiphobicity) after argon atmospheric pressure plasma (APP) treatment. The surface free energy calculated using the Owens-Wendt (OW) method decreased significantly while showing a very small value of the polar component. Scanning electron microscopy indicated that a small amount of hydrophilic solid spines and many superamphiphobic uniform micro air pockets formed in the plasma-modified PVDF film, which made it amphiphobic but not superamphiphobic.

  10. Hydrogen-encapsulated impurity pellet injector for plasma diagnostics

    NASA Astrophysics Data System (ADS)

    Viniar, I.; Reznichenko, P.; Lukin, A.; Umov, A.; Sudo, S.

    2001-06-01

    A novel technology is suggested for making solid hydrogen shells around impurity pellets to be injected into plasmas of fusion devices with a view to looking into its transport properties. In proof-of-principle tests, a 3 mm long and 3 mm diameter cylindrical solid hydrogen shell was formed around a 0.2 mm diameter globular pellet at a temperature of 8-11 K within 5 min and accelerated in a pipe-gun barrel up to 1 km/s.

  11. Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

    PubMed

    Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M

    2016-07-27

    Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes. PMID:27386734

  12. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    SciTech Connect

    Pobedinskas, P. Hardy, A.; Van Bael, M. K.; Haenen, K.; Degutis, G.; Dexters, W.

    2014-02-24

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  13. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    NASA Astrophysics Data System (ADS)

    Pobedinskas, P.; Degutis, G.; Dexters, W.; Hardy, A.; Van Bael, M. K.; Haenen, K.

    2014-02-01

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E1(TO) and E22 phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E1(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E22 peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  14. Hydrogen plasma dynamics in the spherical theta pinch plasma target for heavy ion stripping

    SciTech Connect

    Loisch, G.; Jacoby, J.; Xu, G.; Blazevic, A.; Cihodariu-Ionita, B.

    2015-05-15

    Due to the superior ability of dense and highly ionised plasmas to ionise penetrating heavy ion beams to degrees beyond those reachable by common gas strippers, many experiments have been performed to find suitable plasma generators for this application. In the field of gas discharges, mainly z-pinch devices have been investigated so far, which are known to be limited by the nonlinear focusing effects of the plasma columns sustaining current and by electrode erosion. The spherical theta pinch has therefore been proposed as a substitution for the z-pinch, promising progress by inductive rather than capacitive coupling and displacement of the outer magnetic field by the dense, diamagnetic discharge plasma. As yet mainly experiments with argon/hydrogen mixture gas have been performed, which is not suitable for the application as a plasma stripper, this paper describes the first detailed analysis of the plasma parameters and dynamics of a hydrogen plasma created by the spherical theta pinch. These include the time integrated and time resolved electron density, the dynamics of the plasma in the discharge vessel, the comparison with the argon dominated plasma, and an outlook to reachable characteristics with similar devices.

  15. Fluorocarbon assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

    SciTech Connect

    Metzler, Dominik; Oehrlein, Gottlieb S.; Bruce, Robert L.; Engelmann, Sebastian; Joseph, Eric A.

    2014-03-15

    The authors demonstrate atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. C{sub 4}F{sub 8} injection enables control of the deposited fluorocarbon (FC) layer thickness in the one to several Ångstrom range and chemical modification of the SiO{sub 2} surface. For low energy Ar{sup +} ion bombardment conditions, the physical sputter rate of SiO{sub 2} vanishes, whereas SiO{sub 2} can be etched when FC reactants are present at the surface. The authors have measured for the first time the temporal variation of the chemically enhanced etch rate of SiO{sub 2} for Ar{sup +} ion energies below 30 eV as a function of fluorocarbon surface coverage. This approach enables controlled removal of Ångstrom-thick SiO{sub 2} layers. Our results demonstrate that development of atomic layer etching processes even for complex materials is feasible.

  16. No Positive Effect of Acid Etching or Plasma Cleaning on Osseointegration of Titanium Implants in a Canine Femoral Condyle Press-Fit Model

    PubMed Central

    Saksø, H; Jakobsen, T; Saksø, M; Baas, J; Jakobsen, SS; Soballe, K

    2013-01-01

    Purpose: Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. Methods: In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. Results: The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (p<0.05) while there was no statistical difference in deep surface implant porosity when compared with nontreated implant. Within the deep surface implant porosity, there was more newly formed bone in the control group compared to the ET and ET+PCLN groups (p<0.05). In all compared groups, there was no statistical difference in any biomechanical parameter. Conclusions: In terms of osseointegration on outer surface implant porosity PC+PSHA was superior to the other three groups. Neither the acid etching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time. PMID:23341850

  17. Effect of Hydrogen Plasma on Model Corrosion Layers of Bronze

    NASA Astrophysics Data System (ADS)

    Fojtíková, P.; Sázavská, V.; Mika, F.; Krčma, F.

    2016-05-01

    Our work is about plasmachemical reduction of model corrosion layers. The model corrosion layers were produced on bronze samples with size of 10 × 10 × 5 mm3, containing Cu and Sn. Concentrated hydrochloric acid was used as a corrosive environment. The application of reduction process in low-pressure low-temperature hydrogen plasma followed. A quartz cylindrical reactor with two outer copper electrodes was used. Plasma discharge was generated in pure hydrogen by a RF generator. Each corroded sample was treated in different conditions (supplied power and a continual or pulsed regime with a variable duty cycle mode). Process monitoring was ensured by optical emission spectroscopy. After treatment, samples were analyzed by SEM and EDX.

  18. Surface interactions of SO{sub 2} and passivation chemistry during etching of Si and SiO{sub 2} in SF{sub 6}/O{sub 2} plasmas

    SciTech Connect

    Stillahn, Joshua M.; Zhang Jianming; Fisher, Ellen R.

    2011-01-15

    A variety of materials can be etched in SF{sub 6}/O{sub 2} plasmas. Here, the fate of SO{sub 2} at Si and SiO{sub 2} surfaces during etching in SF{sub 6}/O{sub 2} plasmas has been explored using the imaging of radicals interacting with surfaces method. The scattering of SO{sub 2} at Si and SiO{sub 2} surfaces was measured as a function of both the applied rf power and O{sub 2} addition to the plasma. For both surfaces, the surface scattering coefficient (S) of SO{sub 2} during etching is near unity and is largely unaffected by changing plasma parameters such as power and O{sub 2} addition. Notably the etch rate of Si increases monotonically with power, whereas the etch rate of SiO{sub 2} appears insensitive to changes in plasma conditions. As a result, the etch selectivity closely follows the trends of the Si etch rate. Etch rates are compared to other fluorine-containing plasma systems such as NF{sub 3}/O{sub 2} and C{sub 2}F{sub 6}/O{sub 2}. Using mass spectral data and optical emission spectra to characterize the gas phase species combined with compositional analysis from x-ray photoelectron spectroscopy data, the formation and roles of SO{sub 2} in Si and SiO{sub 2} etching are discussed and correlated with etch rate and other gas phase species such as F, O, and S{sub x}O{sub y}F{sub z}.

  19. Nanotransfer Printing Using Plasma Etched Silicon Stamps and Mediated by In-Situ Deposited Fluoropolyme

    SciTech Connect

    Bhandari, Deepak; Kravchenko, Ivan I; Lavrik, Nickolay V; Sepaniak, Michael J

    2011-01-01

    This communication describes a simple method that uses a thin film of octafluorocyclobutane (OFCB) polymer for efficient nanoscale transfer printing (nTP). Plasma polymerization of OFCB produces a Teflon-like fluoropolymer which strongly adheres and conformally covers 3-D inorganic stamp. The inherently low surface energy of in-situ deposited OFCB polymer on nanoscale silicon features is demonstrated as a unique nanocomposite stamp to fabricate various test structures with improved nTP feature resolution down to sub 100 nm.

  20. Movement of electron when recombining in hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Vikhrev, V. V.

    2015-11-01

    An analytical model and the results of modeling are presented for movement of electrons in recombining hydrogen plasma. It is shown that in case of taking into account the magnetic moment and angular momentum as well as spin flip of electron in magnetic field the electron comes to the orbit with angular momentum ħ/2. If azimuthal and radial components of kinetic energy of electron are equal then the full energy of such the orbits is 13.6 eV.

  1. Fluid hydrogen at high density - The plasma phase transition

    NASA Technical Reports Server (NTRS)

    Saumon, D.; Chabrier, G.

    1989-01-01

    A new model equation of state is applied, based on realistic interparticle potentials and a self-consistent treatment of the internal levels, to fluid hydrogen at high density. This model shows a strong connection between molecular dissociation and pressure ionization. The possibility of a first-order plasma phase transition is considered, and for which both the evolution in temperature and the critical point is given.

  2. Highly efficient metal-free growth of nitrogen-doped single-walled carbon nanotubes on plasma-etched substrates for oxygen reduction.

    PubMed

    Yu, Dingshan; Zhang, Qiang; Dai, Liming

    2010-11-01

    We have for the first time developed a simple plasma-etching technology to effectively generate metal-free particle catalysts for efficient metal-free growth of undoped and/or nitrogen-doped single-walled carbon nanotubes (CNTs). Compared with undoped CNTs, the newly produced metal-free nitrogen-containing CNTs were demonstrated to show relatively good electrocatalytic activity and long-term stability toward oxygen reduction reaction (ORR) in an acidic medium. Owing to the highly generic nature of the plasma etching technique, the methodology developed in this study can be applied to many other substrates for efficient growth of metal-free CNTs for various applications, ranging from energy related to electronic and to biomedical systems.

  3. Finishing of AT-cut quartz crystal wafer with nanometric thickness uniformity by pulse-modulated atmospheric pressure plasma etching.

    PubMed

    Yamamura, Kazuya; Ueda, Masaki; Shibahara, Masafumi; Zettsu, Nobuyuki

    2011-04-01

    Quartz resonator is a very important device to generate a clock frequency for information and telecommunication system. Improvement of the productivity of the quartz resonator is always required because a huge amount of the resonator is demanded for installing to various electronic devices. Resonance frequency of the quartz resonator is decided by the thickness of the quartz crystal wafer. Therefore, it is necessary to uniform the thickness distribution of the wafer with nanometric level. We have proposed the improvement technique of the thickness distribution of the quartz crystal wafer by numerically controlled correction using atmospheric pressure plasma which is non-contact and chemical removal technique. Heating effects of the quartz wafer in the removal rate and the correction accuracy were investigated. The heating of the substrate and compensate of the scanning speed of the worktable according to the variation of the surface temperature enabled an increase of 50% in the etching rate and 10-nanometric-level accuracy in the correction of the thickness distribution of the quartz wafer, respectively.

  4. Enhanced magnetic ionization in hydrogen reflex discharge plasma source

    SciTech Connect

    Toader, E.I.; Covlea, V.N.

    2005-03-01

    The effect of enhanced magnetic ionization on the external and internal parameters of a high-density, low pressure reflex plasma source operating in hydrogen is studied. The Langmuir probe method and Druyvesteyn procedure coupled with suitable software are used to measure the internal parameters. The bulk plasma region is free of an electric field and presents a high degree of uniformity. The electron energy distribution function is bi-Maxwellian with a dip/shoulder structure around 5.5 eV, independent of external parameters and radial position. Due to the enhanced hollow cathode effect by the magnetic trapping of electrons, the electron density n{sub e} is as high as 10{sup 18} m{sup -3}, and the electron temperature T{sub e} is as low as a few tens of an electron volt, for dissipated energy of tens of Watts. The bulk plasma density scales with the dissipated power.

  5. Plasma Depolymerization of Chitosan in the Presence of Hydrogen Peroxide

    PubMed Central

    Ma, Fengming; Wang, Zhenyu; Zhao, Haitian; Tian, Shuangqi

    2012-01-01

    The depolymerization of chitosan by plasma in the presence of hydrogen peroxide (H2O2) was investigated. The efficiency of the depolymerization was demonstrated by means of determination of viscosity-average molecular weight and gel permeation chromatography (GPC). The structure of the depolymerized chitosan was characterized by Fourier-transform infrared spectra (FT-IR), ultraviolet spectra (UV) and X-ray diffraction (XRD). The results showed that chitosan can be effectively degradated by plasma in the presence of H2O2. The chemical structure of the depolymerized chitosan was not obviously modified. The combined plasma/H2O2 method is significantly efficient for scale-up manufacturing of low molecular weight chitosan. PMID:22837727

  6. Highly roughened polycaprolactone surfaces using oxygen plasma-etching and in vitro mineralization for bone tissue regeneration: fabrication, characterization, and cellular activities.

    PubMed

    Kim, YongBok; Kim, GeunHyung

    2015-01-01

    Herein, poly(ɛ-caprolactone) (PCL) surfaces were treated to form various roughness values (R(a)=290-445 nm) and polar functional groups on the surfaces using a plasma-etching process, followed by immersion into simulated body fluid (SBF) for apatite formation. The surface morphology, chemical composition, and mean roughness of the plasma-etched PCL surfaces were measured, and various physical and morphological properties (water contact angles, protein absorption ability, and crystallite size of the apatite layer) of the in vitro mineralized PCL surfaces were evaluated. The roughened PCL surface P-3, which was treated with a sufficient plasma exposure time (4 h), achieved homogeneously distributed apatite formation after soaking in SBF for 7 days, as compared with other surfaces that were untreated or plasma-treated for 30 min or 2 h. Furthermore, to demonstrate their feasibility as a biomimetic surface, pre-osteoblast cells (MC3T3-E1) were cultured on the mineralized PCL surfaces, and cell viability, DAPI-phalloidin fluorescence assay, and alizarin red-staining of the P-3 surface were highly improved compared to the P-1 surface treated with a 30-min plasma exposure time; compared to untreated mineralized PCL surface (N-P), P-3 showed even greater improvements in cell viability and DAPI-phalloidin fluorescence assay. Based on these results, we found that the mineralized PCL surface supplemented with the appropriate plasma treatment can be implicitly helpful to achieve rapid hard tissue regeneration. PMID:25486326

  7. A model for Si, SiCH, SiO{sub 2}, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer

    SciTech Connect

    Raballand, V.; Cartry, G.; Cardinaud, C.

    2007-09-15

    In a previous paper we showed that selective etching of porous SiOCH with respect to SiO{sub 2} and SiCH is clearly enhanced when using a pulsed bias in inductively coupled fluorocarbon plasma. To understand this pulsed process, a model for etch rate calculation is developed in the present paper. This model explains the etching/deposition threshold shift toward higher bias voltage in pulsed conditions. Rather good confidence is obtained with experimental SiO{sub 2}, Si, SiOCH and SiCH etch rates. Porous SiOCH etching is found to behave slightly differently compared to SiO{sub 2} or SiCH; its chemical etching is assumed to occur even during the beginning of off period. This point could explain why good selectivities between porous SiOCH and SiO{sub 2} and SiCH are obtained.

  8. Role of hydrogen in evolution of plasma parameters and dust growth in capacitively coupled dusty plasmas

    SciTech Connect

    Chai, K. B.; Choe, Wonho; Seon, C. R.; Chung, C. W.

    2010-11-15

    The temporal behavior of naturally produced dust parameters (radius and density) and plasma parameters (electron temperature and ion flux) was investigated in radio frequency SiH{sub 4}/H{sub 2}/Ar plasmas. As a result, the electron temperature and ion flux were shown to be strongly correlated with the three-step dust growth pattern. In addition, the generation of dust particles was suppressed by mixing more hydrogen gas due to the plasma chemistry, and consequently, the dust growth rate in the molecular accretion growth, which is known to be proportional to the growth rate of thin film deposition, increased.

  9. Plasma electron temperature and the entropy effect on hydrogen production

    NASA Astrophysics Data System (ADS)

    Chakartnarodom, Parinya

    The thesis is that the interaction between the microwave induced electric field and a conductive material will produce plasma with high effective temperature such that it is thermodynamically and kinetically possible to produce small molecules from large molecules. The high effective temperature increases the potency of the entropy term such that small molecules are produced from large molecules even though the enthalpy for the process is positive. This hypothesis will be tested in several reactions for which the entropy change is positive. The plasma enhanced chemical reactions examined here may also be important in the practical application of alternative fuel production. The specific reactions of interest to this thesis are: (1) H 2O→H2 + 1/2 O2; DeltaGo ( kJ) = 247.5--0.056T, (2) 1/2 N2 + H2O→ H2 + NO; DeltaGo (kJ) = 338.45--0.069T, (3) C + H2O →Fe H2 + CO; Delta Go(kJ) = 135.8--0.143 T, (4) C6H 10O5 → 5H2 + C + 5CO; DeltaGo( kJ) = 711.3--2.48T. Experiments are carried out to examine the chemical species present within the plasma by the optical emission spectrometer (OES) and in the resultant gas outflow by the flue gas analyzer as a function of incoming gas composition and composition of the solid materials at the point of plasma initiation. The chemical and plasma reactions observed experimentally will be compared to thermodynamic calculations as a method to test the hypothesis. In addition, hydrogen production from water and from water and nitrogen at elevated effective temperature produces products, which recombine with negative free energy change at lower temperatures. Based on our initial results, it is also necessary to hypothesize that spatiotemporal plasma discharges can produce molecular hydrogen and an associated oxidant at an elevated effective temperature such that the mixture is 'quenched' to a lower temperature where said mixture is kinetically stabilized against spontaneous recombination. In all experiments, the results from OES show

  10. Novel Composite Hydrogen-Permeable Membranes for Nonthermal Plasma Reactors for the Decomposition of Hydrogen Sulfide

    SciTech Connect

    Morris Argyle; John Ackerman; Suresh Muknahallipatna; Jerry Hamann; Stanislaw Legowski; Gui-Bing Zhao; Sanil John; Ji-Jun Zhang; Linna Wang

    2007-09-30

    The goal of this experimental project was to design and fabricate a reactor and membrane test cell to dissociate hydrogen sulfide (H{sub 2}S) in a nonthermal plasma and to recover hydrogen (H{sub 2}) through a superpermeable multi-layer membrane. Superpermeability of hydrogen atoms (H) has been reported by some researchers using membranes made of Group V transition metals (niobium, tantalum, vanadium, and their alloys), but it was not achieved at the moderate pressure conditions used in this study. However, H{sub 2}S was successfully decomposed at energy efficiencies higher than any other reports for the high H{sub 2}S concentration and moderate pressures (corresponding to high reactor throughputs) used in this study.

  11. Negative hydrogen ion production in a helicon plasma source

    SciTech Connect

    Santoso, J. Corr, C. S.; Manoharan, R.; O'Byrne, S.

    2015-09-15

    In order to develop very high energy (>1 MeV) neutral beam injection systems for applications, such as plasma heating in fusion devices, it is necessary first to develop high throughput negative ion sources. For the ITER reference source, this will be realised using caesiated inductively coupled plasma devices, containing either hydrogen or deuterium discharges, operated with high rf input powers (up to 90 kW per driver). It has been suggested that due to their high power coupling efficiency, helicon devices may be able to reduce power requirements and potentially obviate the need for caesiation due to the high plasma densities achievable. Here, we present measurements of negative ion densities in a hydrogen discharge produced by a helicon device, with externally applied DC magnetic fields ranging from 0 to 8.5 mT at 5 and 10 mTorr fill pressures. These measurements were taken in the magnetised plasma interaction experiment at the Australian National University and were performed using the probe-based laser photodetachment technique, modified for the use in the afterglow of the plasma discharge. A peak in the electron density is observed at ∼3 mT and is correlated with changes in the rf power transfer efficiency. With increasing magnetic field, an increase in the negative ion fraction from 0.04 to 0.10 and negative ion densities from 8 × 10{sup 14 }m{sup −3} to 7 × 10{sup 15 }m{sup −3} is observed. It is also shown that the negative ion densities can be increased by a factor of 8 with the application of an external DC magnetic field.

  12. Atomic layer etching of Al2O3 using sequential, self-limiting thermal reactions with Sn(acac)2 and hydrogen fluoride.

    PubMed

    Lee, Younghee; George, Steven M

    2015-02-24

    The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential, self-limiting thermal reactions with tin(II) acetylacetonate (Sn(acac)2) and hydrogen fluoride (HF) as the reactants. The Al2O3 samples were Al2O3 atomic layer deposition (ALD) films grown using trimethylaluminum and H2O. The HF source was HF-pyridine. Al2O3 was etched linearly with atomic level precision versus number of reactant cycles. The Al2O3 ALE was monitored at temperatures from 150 to 250 °C. Quartz crystal microbalance (QCM) studies revealed that the sequential Sn(acac)2 and HF reactions were self-limiting versus reactant exposure. QCM measurements also determined that the mass change per cycle (MCPC) increased with temperature from -4.1 ng/(cm(2) cycle) at 150 °C to -18.3 ng/(cm(2) cycle) at 250 °C. These MCPC values correspond to etch rates from 0.14 Å/cycle at 150 °C to 0.61 Å/cycle at 250 °C based on the Al2O3 ALD film density of 3.0 g/cm(3). X-ray reflectivity (XRR) analysis confirmed the linear removal of Al2O3 and measured an Al2O3 ALE etch rate of 0.27 Å/cycle at 200 °C. The XRR measurements also indicated that the Al2O3 films were smoothed by Al2O3 ALE. The overall etching reaction is believed to follow the reaction Al2O3 + 6Sn(acac)2 + 6HF → 2Al(acac)3 + 6SnF(acac) + 3H2O. In the proposed reaction mechanism, the Sn(acac)2 reactant donates acac to the substrate to produce Al(acac)3. The HF reactant allows SnF(acac) and H2O to leave as reaction products. The thermal ALE of many other metal oxides using Sn(acac)2 or other metal β-diketonates, together with HF, should be possible by a similar mechanism. This thermal ALE mechanism may also be applicable to other materials such as metal nitrides, metal phosphides, metal sulfides and metal arsenides.

  13. Atomic layer etching of Al2O3 using sequential, self-limiting thermal reactions with Sn(acac)2 and hydrogen fluoride.

    PubMed

    Lee, Younghee; George, Steven M

    2015-02-24

    The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential, self-limiting thermal reactions with tin(II) acetylacetonate (Sn(acac)2) and hydrogen fluoride (HF) as the reactants. The Al2O3 samples were Al2O3 atomic layer deposition (ALD) films grown using trimethylaluminum and H2O. The HF source was HF-pyridine. Al2O3 was etched linearly with atomic level precision versus number of reactant cycles. The Al2O3 ALE was monitored at temperatures from 150 to 250 °C. Quartz crystal microbalance (QCM) studies revealed that the sequential Sn(acac)2 and HF reactions were self-limiting versus reactant exposure. QCM measurements also determined that the mass change per cycle (MCPC) increased with temperature from -4.1 ng/(cm(2) cycle) at 150 °C to -18.3 ng/(cm(2) cycle) at 250 °C. These MCPC values correspond to etch rates from 0.14 Å/cycle at 150 °C to 0.61 Å/cycle at 250 °C based on the Al2O3 ALD film density of 3.0 g/cm(3). X-ray reflectivity (XRR) analysis confirmed the linear removal of Al2O3 and measured an Al2O3 ALE etch rate of 0.27 Å/cycle at 200 °C. The XRR measurements also indicated that the Al2O3 films were smoothed by Al2O3 ALE. The overall etching reaction is believed to follow the reaction Al2O3 + 6Sn(acac)2 + 6HF → 2Al(acac)3 + 6SnF(acac) + 3H2O. In the proposed reaction mechanism, the Sn(acac)2 reactant donates acac to the substrate to produce Al(acac)3. The HF reactant allows SnF(acac) and H2O to leave as reaction products. The thermal ALE of many other metal oxides using Sn(acac)2 or other metal β-diketonates, together with HF, should be possible by a similar mechanism. This thermal ALE mechanism may also be applicable to other materials such as metal nitrides, metal phosphides, metal sulfides and metal arsenides. PMID:25604976

  14. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

    SciTech Connect

    Tasaka, Akimasa; Kotaka, Yuki; Oda, Atsushi; Saito, Morihiro; Tojo, Tetsuro; Inaba, Minoru

    2014-09-01

    In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the number of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.

  15. Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

    NASA Astrophysics Data System (ADS)

    Deng, Jian-Hua; Cheng, Lin; Wang, Fan-Jie; Yu, Bin; Li, Guo-Zheng; Li, De-Jun; Cheng, Guo-An

    2015-01-01

    Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP3-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/μm and threshold field of 0.896 V/μm, much better than 0.948 and 1.559 V/μm of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm2 after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources.

  16. Electrical properties of Hg1-xCdxTe by different etching techniques

    NASA Astrophysics Data System (ADS)

    Chen, X. T.; Qiao, H.; Liu, X. Y.; Yang, K. J.

    2015-11-01

    Effects on the electrical properties of HgCdTe photoconductive devices etched by inductively coupled plasma (ICP) based on CH4-Ar mixture, ion beam milling (IBM) and bromine-hydrogen bromide solution (Br2/HBr) have been investigated. Magnetic-field-dependent Hall measurement and optoelectronic performance measurement at liquid nitrogen temperature were performed. Mobility spectrum analysis (MSA) and multicarrier fitting (MCF) were applied to evaluate the carrier characteristics. Sample etched by ICP indicated a higher mobility and the carrier scattering mechanism was dominated by polar optical phonon (POP) which could lead to superior detector performance accordingly. Meanwhile, sample etched by IBM was found to have large amount of electron concentration and sample etched by Br2/HBr showed a very low mobility. The dominant mechanism of Br2/HBr etched sample was ionized impurity scattering for the carriers which meant inferior resultant detector performance.

  17. Modeling hydrogen isotope behavior in fusion plasma-facing components

    NASA Astrophysics Data System (ADS)

    Hu, Alice; Hassanein, Ahmed

    2014-03-01

    In this work, we focus on understanding hydrogen isotope retention in plasma-facing materials in fusion devices. Three common simulation methods are usually used to study this problem that includes Monte Carlo, molecular dynamics, and numerical/analytical methods. A system of partial differential equations describing deuterium behavior in tungsten under various conditions is solved numerically to explain recent data compared to other methods. The developed model of hydrogen retention in metals includes classic, intercrystalline and trapped-induced Gorsky effects. The bombardment and depth profile of 200 eV deuterium in single crystal tungsten are simulated and compared with recent work. The total deuterium retention at various temperatures and fluences are also calculated and compared with available data. The results are in reasonable agreement with data and therefore, this model can be used to estimate deuterium inventory and recovery in future fusion devices.

  18. Positive ion polymerization in hydrogen diluted silane plasmas

    SciTech Connect

    Nunomura, S.; Kondo, M.

    2008-12-08

    Mass spectra of positive ions (cations) and neutrals have been measured in hydrogen diluted silane plasmas at gas pressures of 0.1-10 Torr. The mass spectrum of ions changes with the pressure, while that of neutrals maintains a similar shape. The dominant ion species varies from a hydrogen ion group at < or approx. 0.5 Torr to a monosilicon hydride ion group at {approx_equal}0.5-1 Torr and polysilicon hydride ion groups at > or approx. 1 Torr, which is determined from ionization channels and consecutive ion-molecule reactions. The ion bombardment is suppressed with the pressure, from several tens of eV at < or approx. 1 Torr to a few eV at > or approx. 7 Torr.

  19. Scanning electron microscopy and EDX analysis of exocrine and endocrine gland cells of rat pancreas surface-etched in an oxygen plasma.

    PubMed

    Yoshino, M; Miyasaka, S; Sato, H; Seta, S

    1982-01-01

    Pancreas, double-fixed in glutaraldehyde and osmium tetroxide and embedded in epoxy resin was cut into sections 0.5-1 micron thick. The sections were surface-etched in an oxygen plasma produced by exciting oxygen with a radio frequency generator. Structural components of exocrine and endocrine cells were morphologically investigated in the secondary electron image mode of the SEM. Moreover, in order to identify some cell components such as endocrine granules, the morphological image obtained of the etched surface by the SEM were compared with those seen in a TEM, using the serial sections from the same tissue block and at the same cellular level. For a microanalytical investigation, tissues were fixed with glutaraldehyde alone. The structural components of exocrine and endocrine cells were analyzed by SEM/EDX. A better resolution under the SEM was obtained of 0.5-0.8 micron thick sections after surface-etching in an oxygen plasma for 1 minute. Intracellular structures such as nuclear membranes, nucleolus, mitochondria, rough endoplasmic reticulum and zymogen granules were readily identifiable. Moreover, the internal structure of organelles such as cristae of mitochondria was recognized. In the serial sections, the mode of arrangement of intracellular structures in the SEM was well consistent with those in the TEM. The peaks of phosphorus, sulphur and calcium were clearly detected from the intracellular components such as nucleolus, nuclear membranes and secretory granules.

  20. Modeling of Stark-Zeeman Lines in Magnetized Hydrogen Plasmas

    NASA Astrophysics Data System (ADS)

    Rosato, J.; Bufferand, H.; Capes, H.; Koubiti, M.; Godbert-Mouret, L.; Marandet, Y.; Stamm, R.

    2015-12-01

    The action of electric and magnetic fields on atomic species results in a perturbation of the energy level structure, which alters the shape of spectral lines. In this work, we present the Zeeman-Stark line shape simulation method and perform new calculations of hydrogen Lyman and Balmer lines, in the framework of magnetic fusion research. The role of the Zeeman effect, fine structure and the plasma's non-homogeneity along the line-of-sight are investigated. Under specific conditions, our results are applicable to DA white dwarf atmospheres.

  1. Determining electron temperature and density in a hydrogen microwave plasma

    NASA Technical Reports Server (NTRS)

    Scott, Carl D.; Farhat, Samir; Gicquel, Alix; Hassouni, Khaled; Lefebvre, Michel

    1993-01-01

    A three-temperature thermo-chemical model is developed for analyzing the chemical composition and energy states of a hydrogen microwave plasma used for studying diamond deposition. The chemical and energy exchange rate coefficients are determined from cross section data, assuming Maxwellian velocity distributions for electrons. The model is reduced to a zero-dimensional problem to solve for the electron temperature and ion mole fraction, using measured vibrational and rotational temperatures. The calculations indicate that the electron temperature may be determined to within a few percent error even though the uncertainty in dissociation fraction is many times larger.

  2. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  3. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    PubMed

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  4. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  5. Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF{sub 6}/O{sub 2} inductively coupled plasma

    SciTech Connect

    Okamoto, Naoya

    2009-05-15

    The author investigated the etching characteristics of semi-insulating (SI) and n-doped (n-) 4H-SiC substrates at a high etch rate of about 2 {mu}m/min using high-density SF{sub 6}/O{sub 2} inductively coupled plasma. The etch rate of SI-SiC was found to be lower than that of n-SiC, and the etching profile of SI-SiC showed retrograde features with a larger sidewall angle and a rounder etched bottom compared to n-SiC. These characteristics are attributed to the difference in wafer heating and negative charging of the sidewall during plasma etching between both substrates. The temperature of n-SiC increases by radiative heating from the high-density plasma during etching because of the higher free-carrier absorption compared to SI-SiC. Furthermore, the negative charge buildup at the sidewall of SI-SiC becomes stronger because of the lower electrical conductivity compared to n-SiC.

  6. An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

    NASA Astrophysics Data System (ADS)

    Babar, S.; Sellin, P. J.; Watts, J. F.; Baker, M. A.

    2013-01-01

    The performance of single crystal CdZnTe radiation detectors is dependent on both the bulk and the surface properties of the material. After single crystal fabrication and mechanical polishing, modification of the surface to remove damage and reduce the surface leakage current is generally achieved through chemical etching followed by a passivation treatment. In this work, CdZnTe single crystals have been chemically etched using a bromine in methanol (BM) treatment. The BM concentrations employed were 0.2 and 2.0 (v/v) % and exposure times varied between 5 and 120 s. Angle resolved XPS and sputter depth profiling has been employed to characterize the surfaces for the different exposure conditions. A Te rich surface layer was formed for all exposures and the layer thickness was found to be independent of exposure time. The enriched Te layer thickness was accurately determined by calibrating the sputter rate against a CdTe layer of known thickness. For BM concentrations of 0.2 (v/v) % and 2 (v/v) %, the Te layer thickness was determined to be 1.3 ± 0.2 and 1.8 ± 0.2 nm, respectively. The BM etched surfaces have subsequently been passivated in a 30 wt.% H2O2 solution employing exposure time of 15 s. The oxide layer thickness has been calculated using two standard XPS methodologies, based on the Beer-Lambert expression. The TeO2 thickness calculated from ARXPS data are slightly higher than the thickness obtained by the simplified Beer-Lambert expression. For BM exposures of 30-120 s followed by a passivation treatment of 30 wt. % H2O2 solution employing an exposure time 15 s, the ARXPS method gave an average TeO2 thickness value of 1.20 nm and the simplified Beer-Lambert expression gave an average thickness value of 0.99 nm.

  7. Effect of Non-Thermal Argon Plasma on Bond Strength of a Self-Etch Adhesive System to NaOCl-Treated Dentin.

    PubMed

    Abreu, João Luiz Bittencourt de; Prado, Maíra; Simão, Renata Antoun; Silva, Eduardo Moreira da; Dias, Katia Regina Hostilio Cervantes

    2016-01-01

    Studies have been showing a decrease of bond strength in dentin treated with sodium hypochlorite (NaOCl). The aim of this study was to evaluate the effect of non-thermal argon plasma on the bond strength of a self-etch adhesive system to dentin exposed to NaOCl. Thirty-two flat dentin surfaces of bovine incisors were immersed in 2.5% NaOCl for 30 min to simulate the irrigation step during endodontic treatment. The specimens were divided into four groups (n=8), according to the surface treatment: Control (without plasma treatment), AR15 (argon plasma for 15 s), AR30 (argon plasma for 30 s) and AR45 (argon plasma for 45 s). For microtensile bond strength test, 5 specimens were used per group. In each group, the specimens were hybridized with a self-etch adhesive system (Clearfil SE Bond) and resin composite buildups were constructed. After 48 h of water storage, specimens were sectioned into sticks (5 per tooth, 25 per group) and subjected to microtensile bond strength test (μTBS) until failure, evaluating failure mode. Three specimens per group were analyzed under FTIR spectroscopy to verify the chemical modifications produced in dentin. μTBS data were analyzed using ANOVA and Tamhane tests (p<0.05). AR30 showed the highest μTBS (20.86±9.0). AR15 (13.81±6.4) and AR45 (11.51±6.8) were statistically similar to control (13.67±8.1). FTIR spectroscopy showed that argon plasma treatment produced chemical modifications in dentin. In conclusion, non-thermal argon plasma treatment for 30 s produced chemical changes in dentin and improved the μTBs of Clearfil SE Bond to NaOCl-treated dentin. PMID:27652709

  8. Effect of Non-Thermal Argon Plasma on Bond Strength of a Self-Etch Adhesive System to NaOCl-Treated Dentin.

    PubMed

    Abreu, João Luiz Bittencourt de; Prado, Maíra; Simão, Renata Antoun; Silva, Eduardo Moreira da; Dias, Katia Regina Hostilio Cervantes

    2016-01-01

    Studies have been showing a decrease of bond strength in dentin treated with sodium hypochlorite (NaOCl). The aim of this study was to evaluate the effect of non-thermal argon plasma on the bond strength of a self-etch adhesive system to dentin exposed to NaOCl. Thirty-two flat dentin surfaces of bovine incisors were immersed in 2.5% NaOCl for 30 min to simulate the irrigation step during endodontic treatment. The specimens were divided into four groups (n=8), according to the surface treatment: Control (without plasma treatment), AR15 (argon plasma for 15 s), AR30 (argon plasma for 30 s) and AR45 (argon plasma for 45 s). For microtensile bond strength test, 5 specimens were used per group. In each group, the specimens were hybridized with a self-etch adhesive system (Clearfil SE Bond) and resin composite buildups were constructed. After 48 h of water storage, specimens were sectioned into sticks (5 per tooth, 25 per group) and subjected to microtensile bond strength test (μTBS) until failure, evaluating failure mode. Three specimens per group were analyzed under FTIR spectroscopy to verify the chemical modifications produced in dentin. μTBS data were analyzed using ANOVA and Tamhane tests (p<0.05). AR30 showed the highest μTBS (20.86±9.0). AR15 (13.81±6.4) and AR45 (11.51±6.8) were statistically similar to control (13.67±8.1). FTIR spectroscopy showed that argon plasma treatment produced chemical modifications in dentin. In conclusion, non-thermal argon plasma treatment for 30 s produced chemical changes in dentin and improved the μTBs of Clearfil SE Bond to NaOCl-treated dentin.

  9. Low-pressure hydrogen plasmas explored using a global model

    NASA Astrophysics Data System (ADS)

    Samuell, Cameron M.; Corr, Cormac S.

    2016-02-01

    Low-pressure hydrogen plasmas have found applications in a variety of technology areas including fusion, neutral beam injection and material processing applications. To better understand these discharges, a global model is developed to predict the behaviour of electrons, ground-state atomic and molecular hydrogen, three positive ion species (H+, \\text{H}2+ , and \\text{H}3+ ), a single negative ion species (H-), and fourteen vibrationally excited states of molecular hydrogen ({{\\text{H}}2}≤ft(\\upsilon =1\\right. -14)). The model is validated by comparison with experimental results from a planar inductively coupled GEC reference cell and subsequently applied to the MAGPIE linear helicon reactor. The MAGPIE reactor is investigated for a range of pressures from 1 to 100 mTorr and powers up to 5 kW. With increasing power between 50 W and 5 kW at 10 mTorr the density of all charged species increases as well as the dissociative fraction while the electron temperature remains almost constant at around 3 eV. For gas pressures from 1-100 mTorr at an input power of 1 kW, the electron density remains almost constant, the electron temperature and dissociative fraction decreases, while \\text{H}3+ density increases in density and also dominates amongst ion species. Across these power and pressure scans, electronegativity remains approximately constant at around 2.5%. The power and pressure determines the dominant ion species in the plasma with \\text{H}3+ observed to dominate at high pressures and low powers whereas H+ tends to be dominant at low pressures and high powers. A sensitivity analysis is used to demonstrate how experimental parameters (power, pressure, reactor wall material, geometry etc) influence individual species’ density as well as the electron temperature. Physical reactor changes including the length, radius and wall recombination coefficient are found to have the largest influence on outputs obtained from the model.

  10. Surface pH and bond strength of a self-etching primer/adhesive system to intracoronal dentin after application of hydrogen peroxide bleach with sodium perborate.

    PubMed

    Elkhatib, Hanadi; Nakajima, Masatoshi; Hiraishi, Noriko; Kitasako, Yuichi; Tagami, Junji; Nomura, Satoshi

    2003-01-01

    This study compared the dentin bond strength of a self-etching primer/adhesive system with dentin surface pH with or without bleaching and observed the morphological changes in bleached dentin treated with a self-etching primer. Dentin disks were prepared from the coronal-labial region of 32 human anterior teeth. The pulpal surfaces of the dentin disks were polished with 600-grit SiC paper under running water. The dentin surfaces on all specimens were bleached with a mixture of 30% hydrogen peroxide and sodium perborate in 100% humidity at 37 degrees C for one week. The bleaching agent was then rinsed off with water for 5, 15 or 30 seconds. All specimens were stored in water at 37 degrees C. Half of the five-second rinsing specimens were stored in water for an additional week. Dentin surface pH with or without bleaching was examined using a pH-imaging microscope (SCHEM-100). A self-etching primer/adhesive system (Clearfil SE Bond) was applied to bleached or unbleached dentin according to the manufacturer's instructions. After 24-hour water storage, the bonded specimens were prepared for microtensile testing. Microtensile bond strength (microTBS) to dentin was measured using a universal-testing machine (EZ test, Shimadzu, Japan) at a crosshead speed of 1.0 mm/minute. Data were analyzed by one-way ANOVA and Scheffe's test (alpha=0.05). The pH values of the dentin surfaces of the 5 and 15 second rinsing groups were significantly higher than the control group (p<0.05), while the 30-second rinsing and one-week water storage groups had similar surface pH values to the control group (p<0.05). The microTBS of 5, 15 and 30 second rinsing specimens after bleaching were significantly lower than the control specimens (p<0.05). However, after one-week of water storage, the microTBS returned to the control group. The application of a bleaching agent increased the pH value of the dentin surface and decreased the bond strength of the self-etching primer/adhesive system. One

  11. Blistering of implanted crystalline silicon by plasma hydrogenation investigated by Raman scattering spectroscopy

    SciTech Connect

    Duengen, W.; Job, R.; Mueller, T.; Ma, Y.; Fahrner, W. R.; Keller, L. O.; Horstmann, J. T.; Fiedler, H.

    2006-12-15

    Czochralski silicon wafers were implanted with H{sup +} ions at a dose of 1x10{sup 16} cm{sup -2} followed by hydrogen plasma treatments at different temperatures. The minimum hydrogen implantation dose required for silicon surface exfoliation of 3x10{sup 16} H{sup +}/cm{sup 2} without further hydrogen incorporation was reduced to one-third by subsequent plasma hydrogenation. The corresponding local vibrational modes of hydrogen molecules, vacancy-hydrogen complexes, and Si-H bonds on surfaces have been analyzed by micro-Raman scattering spectroscopy to investigate blistering and platelet formation. The surface profile has been studied by atomic force microscopy and scanning electron microscopy. The plasma treated samples were annealed to investigate the mechanism and applicability of the induced exfoliation. <111>-platelet formation occurred below plasma hydrogenation temperatures of 350 deg. C. At temperatures above 450 deg. C, <100>-platelet nucleation induced blistering.

  12. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  13. Review of hydrogen pellet injection technology for plasma fueling applications

    SciTech Connect

    Milora, S.L.

    1989-05-01

    In the past several years, steady progress has been made worldwide in the development of high-speed hydrogen pellet injectors for fueling magnetically confined plasmas. Several fueling systems based on the conventional pneumatic and centrifuge acceleration concepts have been put into practice on a wide variety of toroidal plasma confinement devices. Long-pulse fueling has been demonstrated in the parameter range 0.8--1.3 km/s, for pellets up to 6 mm in diameter, and at delivery rates up to 40 Hz. Conventional systems have demonstrated the technology to speeds approaching 2 km/s, and several more exotic accelerator concepts are under development to meet the more demanding requirements of the next generation of reactor-grade plasmas. These include a gas gun that can operate in tritium, the two-stage light gas gun, electrothermal guns, electromagnetic rail guns, and an electron-beam-driven thruster. Although these devices are in various stages of development, velocities of 3.8 km/s have already been achieved with two-stage light gas guns, and the prospects for attaining 5 km/s in the near future appear good.

  14. Reactive ion etching-induced damage in AlAs/InGaAs heterostructure field-effect transistors processed in HBR plasma

    SciTech Connect

    Fay, P.; Agarwala, S.; Scafidi, C.; Adesida, I.

    1994-11-01

    An investigation of the effects of HBr reactive ion etching (RIE) processing for gate recessing in lattice-matched InAlAl/InGaAs heterostructure field-effect transitors (HFETs) has been conducted. The effect of varying the Schottky barrier layer thickness on device performance and the susceptibility of HFETs to RIE-induced damage are presented for barrier layer thicknesses ranging from 10 to 25 nm. The effect of plasma self-bias voltage during gate recess etching on overall device performance for a given layer is assessed through direct current (dc) characterization and transconductance, threshold voltage, reverse gate leakage current, and gate-drain breakdown voltage, and through microwave characterization of the devices. Devices with barrier layers less than 20 nm thick are found to suffer the most degradation due to the RIE-induced damage. For devices with sufficiently thick barrier layers, dc and microwave device parameters compare well with those of corresponding devices fabricated using a selective wet-etch process. 10 refs., 5 figs., 1 tab.

  15. Plasma-screening effects on the electron-impact excitation of hydrogenic ions in dense plasmas

    NASA Technical Reports Server (NTRS)

    Jung, Young-Dae

    1993-01-01

    Plasma-screening effects are investigated on electron-impact excitation of hydrogenic ions in dense plasmas. Scaled cross sections Z(exp 4) sigma for 1s yields 2s and 1s yields 2p are obtained for a Debye-Hueckel model of the screened Coulomb interaction. Ground and excited bound wave functions are modified in the screened Coulomb potential (Debye-Hueckel model) using the Ritz variation method. The resulting atomic wave functions and their eigenenergies agree well with the numerical and high-order perturbation theory calculations for the interesting domain of the Debye length not less than 10. The Born approximation is used to describe the continuum states of the projectile electron. Plasma screening effects on the atomic electrons cannot be neglected in the high-density cases. Including these effects, the cross sections are appreciably increased for 1s yields 2s transitions and decreased for 1s yields 2p transitions.

  16. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    NASA Technical Reports Server (NTRS)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  17. Radiative cooling of a hydrogen plasma in a shock tube

    NASA Technical Reports Server (NTRS)

    Stickford, G. H., Jr.

    1975-01-01

    A method of computing radiative cooling of a hydrogen plasma assuming quasi-isothermal radiative transfer is described. A comparison with nonisothermal calculations for a plane parallel slab indicates good agreement for temperature gradients up to 300 K/cm. The calculations are compared with shock-tube data obtained in the JPL high-performance shock-tube facility. The calculations agreed with the data for one run but were 20 percent high for the other. Due to greater radiative cooling at the test slug boundaries a lateral temperature variation typically exists. This would cause the intensity measurement, which is integrated across the diameter of the test slug, to be below the prediction.

  18. Hydrogen Balmer-alpha broadening in dense plasmas.

    PubMed

    Alexiou, S; Leboucher-Dalimier, E

    1999-09-01

    This work presents a theoretical analysis of experimental results for the hydrogen Balmer-alpha line in dense plasmas, with electron densities between 2x10(18) and 9x10(18) e/cm(3) A simulation of both electrons and ions is employed to produce reliable theoretical widths. These results are essentially in agreement with standard theory results and, for the most part, disagree with the experimental results. Consequently, either mechanisms not accounted for in the theoretical results (such as quadrupoles) are more important than previously thought at these densities, or else there is a problem in the experimental data (such as a possible reabsorption, which is not ruled out by the experimental data). PMID:11970167

  19. Angled stripe InGaAsP/InP SLED fabricated by low-damage inductively coupled plasma dry etching

    NASA Astrophysics Data System (ADS)

    Zhang, Jun; Huang, Xiaodong; Chang, Jin; Liu, Yingjun; Gan, Yi; Li, Linsong; Wang, Dingli; Liu, Tao; Jiang, Shan; Deng, Ligang

    2004-05-01

    We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl2/N2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl2/N2 based process can get rid of chemical damage caused by CH4/H2. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25°C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB.

  20. Impact of hydrogen isotope species on microinstabilities in helical plasmas

    NASA Astrophysics Data System (ADS)

    Nakata, Motoki; Nunami, Masanori; Sugama, Hideo; Watanabe, Tomo-Hiko

    2016-07-01

    The impact of isotope ion mass on ion-scale and electron-scale microinstabilities such as ion temperature gradient (ITG) mode, trapped electron mode (TEM), and electron temperature gradient (ETG) mode in helical plasmas are investigated by using gyrokinetic Vlasov simulations with a hydrogen isotope and real-mass kinetic electrons. Comprehensive scans for the equilibrium parameters and magnetic configurations clarify the transition from ITG mode to TEM instability, where a significant TEM enhancement is revealed in the case of inward-shifted plasma compared to that in the standard configuration. It is elucidated that the ion-mass dependence on the ratio of the electron-ion collision frequency to the ion transit one, i.e. {ν\\text{ei}}/{ω\\text{ti}}\\propto {{≤ft({{m}\\text{i}}/{{m}\\text{e}}\\right)}1/2} , leads to a stabilization of the TEM for heavier isotope ions. The ITG growth rate indicates a gyro-Bohm-like ion-mass dependence, where the mixing-length estimate of diffusivity yields γ /k\\bot2\\propto m\\text{i}1/2 . On the other hand, a weak isotope dependence of the ETG growth rate is identified. A collisionality scan also reveals that the TEM stabilization by the isotope ions becomes more significant for relatively higher collisionality in a banana regime.

  1. Impact of hydrogen isotope species on microinstabilities in helical plasmas

    NASA Astrophysics Data System (ADS)

    Nakata, Motoki; Nunami, Masanori; Sugama, Hideo; Watanabe, Tomo-Hiko

    2016-07-01

    The impact of isotope ion mass on ion-scale and electron-scale microinstabilities such as ion temperature gradient (ITG) mode, trapped electron mode (TEM), and electron temperature gradient (ETG) mode in helical plasmas are investigated by using gyrokinetic Vlasov simulations with a hydrogen isotope and real-mass kinetic electrons. Comprehensive scans for the equilibrium parameters and magnetic configurations clarify the transition from ITG mode to TEM instability, where a significant TEM enhancement is revealed in the case of inward-shifted plasma compared to that in the standard configuration. It is elucidated that the ion-mass dependence on the ratio of the electron–ion collision frequency to the ion transit one, i.e. {ν\\text{ei}}/{ω\\text{ti}}\\propto {{≤ft({{m}\\text{i}}/{{m}\\text{e}}\\right)}1/2} , leads to a stabilization of the TEM for heavier isotope ions. The ITG growth rate indicates a gyro-Bohm-like ion-mass dependence, where the mixing-length estimate of diffusivity yields γ /k\\bot2\\propto m\\text{i}1/2 . On the other hand, a weak isotope dependence of the ETG growth rate is identified. A collisionality scan also reveals that the TEM stabilization by the isotope ions becomes more significant for relatively higher collisionality in a banana regime.

  2. Correlation of H/sup -/ production and the work function of a surface in a hydrogen plasma

    SciTech Connect

    Wada, M.

    1983-03-01

    Surface-plasma negative hydrogen ion sources are being developed as possible parts for future neutral beam systems. In these ion sources, negative hydrogen ions (H/sup -/) are produced at low work function metal surfaces immersed in hydrogen plasmas. To investigate the correlation between the work function and the H/sup -/ production at the surface with a condition similar to the one in the actual plasma ion source, these two parameters were simultaneously measured in the hydrogen plasma environment.

  3. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

    SciTech Connect

    Marchack, Nathan; Kim, Taeseung; Chang, Jane P.; Blom, Hans-Olof

    2015-05-15

    The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

  4. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    NASA Astrophysics Data System (ADS)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  5. Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled Cl2/CH4/H2/Ar and BCl3/CH4/H2/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Lee, Hack Joo; Kwon, Bong Soo; Kim, Hyun Woo; Kim, Seon Il; Yoo, Dong-Geun; Boo, Jin-Hyo; Lee, Nae-Eung

    2008-08-01

    ZnO and Al-doped ZnO (AZO) were etched in Cl2/CH4/H2/Ar (Cl2-based) and BCl3/CH4/H2/Ar (BCl3-based), inductively coupled plasmas (ICPs) and their etching characteristics were compared by varying the Cl2/(Cl2+CH4) and BCl3/(BCl3+CH4) flow ratios, top electrode power and dc self-bias voltage (Vdc). The etch rates of both ZnO and AZO layers were higher in the Cl2-based chemistry than in the BCl3-based chemistry. The AZO and ZnO etch rates were increased and decreased, respectively, with increasing Cl2 or BCl3 flow ratio. Optical emission measurements of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, indicated that, with increasing Cl2 or BCl3 flow ratio; the effective removal of Al in the AZO enhanced the AZO etch rate, whereas the reduced removal of Zn by the Zn(CHx)y products reduced the ZnO etch rate.

  6. Etching characteristics and mechanism of SiN(x) films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratio.

    PubMed

    Son, Jinyoung; Efremov, Alexander; Yun, Sun Jin; Yeom, Geun Young; Kwonl, Kwang-ho

    2014-12-01

    Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist were measured in the range of 25-75% O2 in a feed gas at fixed CH2F2 content (25%), gas pressure (6 mTorr), input power (900 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters were analyzed using the Langmuir probe diagnostics and optical emission spectroscopy. The chemical states of the etched surfaces were examined by the X-ray photoelectron spectroscopy. It was found that the non-monotonic (with a maximum at about 50-60% O2) SiN(x) etching rate does not correlate with monotonically decreasing F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the SiN(x) etching process is also controlled by the O and H atom fluxes through the destruction of the fluorocarbon polymer layer. PMID:25971095

  7. Environmental photostability of SF6-etched silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Liptak, R. W.; Yang, J.; Kramer, N. J.; Kortshagen, U.; Campbell, S. A.

    2012-10-01

    We report on the long-term environmental stability of the photoluminescent (PL) properties of silicon nanocrystals (SiNCs). We prepared sulfur hexafluoride (SF6) etched SiNCs in a two-stage plasma reactor and investigated their PL stability against UV irradiation in air. Unlike SiNCs with hydrogen-passivated surfaces, the SF6-etched SiNCs exhibit no photobleaching upon extended UV irradiation despite surface oxidation. Furthermore, the PL quantum yield also remains stable upon heating the SF6-etched SiNCs up to 160 °C. The observed thermal and UV stability of SF6-etched SiNCs combined with their PL quantum yields of up to ˜50% make them attractive candidates for UV downshifting to enhance the efficiency of solar cells. Electron paramagnetic spin resonance indicates that the SF6-etched SiNCs have a lowered density of defect states, both as-formed and after room temperature oxidation in air.

  8. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  9. Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH{sub 2}F{sub 2}/H{sub 2} plasmas

    SciTech Connect

    Kim, J. S.; Kwon, B. S.; Heo, W.; Jung, C. R.; Park, J. S.; Shon, J. W.; Lee, N.-E.

    2010-01-15

    A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer ( congruent with 80 nm) and Si{sub 3}N{sub 4} hard-mask layer ( congruent with 300 nm). The authors investigated the selective etching of the Si{sub 3}N{sub 4} layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capacitively coupled plasma etcher by varying the process parameters in the CH{sub 2}F{sub 2}/H{sub 2}/Ar plasmas, viz., the etch gas flow ratio, high-frequency source power (P{sub HF}), and low-frequency source power (P{sub LF}). They found that under certain etch conditions they obtain infinitely high etch selectivities of the Si{sub 3}N{sub 4} layers to the PVD a-C on both the blanket and patterned wafers. The etch gas flow ratio played a critical role in determining the process window for infinitely high Si{sub 3}N{sub 4}/PVD a-C etch selectivity because of the change in the degree of polymerization. The etch results of a patterned ArF photoresisit/bottom antireflective coating/SiO{sub x}/PVD a-C/Si{sub 3}N{sub 4} MLR structure supported the idea of using a very thin PVD a-C layer as an etch-mask layer for the Si{sub 3}N{sub 4} hard-mask pattern with a pattern width of congruent with 80 nm and high aspect ratio of congruent with 5.

  10. Synthesis of transition-metal phosphides from oxidic precursors by reduction in hydrogen plasma

    SciTech Connect

    Guan Jie; Wang Yao; Qin Minglei; Yang Ying; Li Xiang; Wang Anjie

    2009-06-15

    A series of transition metal phosphides, including MoP, WP, CoP, Co{sub 2}P, and Ni{sub 2}P, were synthesized from their oxidic precursors by means of hydrogen plasma reduction under mild conditions. The effects of reduction conditions, such as metal to phosphorus molar ratio, power input, and reduction time, on the synthesis of metal phosphides were investigated. The products were identified by means of XRD characterization. It is indicated that metal phosphides were readily synthesized stoichiometrically from their oxides in hydrogen plasma under mild conditions. - Graphical abstract: Metal phosphides were obtained stoichiometrically from their oxidic precursors by hydrogen plasma reaction under mild conditions.

  11. Operating characteristics of a hydrogen-argon plasma torch for supersonic combustion applications

    SciTech Connect

    Barbi, E.; Mahan, J.R.; O'brien, W.F.; Wagner, T.C.

    1989-04-01

    The residence time of the combustible mixture in the combustion chamber of a scramjet engine is much less than the time normally required for complete combustion. Hydrogen and hydrocarbon fuels require an ignition source under conditions typically found in a scramjet combustor. Analytical studies indicate that the presence of hydrogen atoms should greatly reduce the ignition delay in this environment. Because hydrogen plasmas are prolific sources of hydrogen atoms, a low-power, uncooled hydrogen plasma torch has been built and tested to evaluate its potential as a possible flame holder for supersonic combustion. The torch was found to be unstable when operated on pure hydrogen; however, stable operation could be obtained by using argon as a body gas and mixing in the desired amount of hydrogen. The stability limits of the torch are delineated and its electrical and thermal behavior documented. An average torch thermal efficiency of around 88 percent is demonstrated. 10 references.

  12. Operating characteristics of a hydrogen-argon plasma torch for supersonic combustion applications

    NASA Technical Reports Server (NTRS)

    Barbi, E.; Mahan, J. R.; O'Brien, W. F.; Wagner, T. C.

    1989-01-01

    The residence time of the combustible mixture in the combustion chamber of a scramjet engine is much less than the time normally required for complete combustion. Hydrogen and hydrocarbon fuels require an ignition source under conditions typically found in a scramjet combustor. Analytical studies indicate that the presence of hydrogen atoms should greatly reduce the ignition delay in this environment. Because hydrogen plasmas are prolific sources of hydrogen atoms, a low-power, uncooled hydrogen plasma torch has been built and tested to evaluate its potential as a possible flame holder for supersonic combustion. The torch was found to be unstable when operated on pure hydrogen; however, stable operation could be obtained by using argon as a body gas and mixing in the desired amount of hydrogen. The stability limits of the torch are delineated and its electrical and thermal behavior documented. An average torch thermal efficiency of around 88 percent is demonstrated.

  13. Temperature of hydrogen radio frequency plasma under dechlorination process of polychlorinated biphenyls

    SciTech Connect

    Inada, Y. Abe, K.; Kumada, A.; Hidaka, K.; Amano, K.; Itoh, K.; Oono, T.

    2014-10-27

    It has been reported that RF (radio frequency) hydrogen plasmas promote the dechlorination process of PCBs (polychlorinated biphenyls) under irradiation of MW (microwave). A relative emission intensity spectroscope system was used for single-shot imaging of two-dimensional temperature distributions of RF hydrogen plasmas generated in chemical solutions with several mixing ratios of isopropyl alcohol (IPA) and insulation oil under MW irradiation. Our experimental results showed that the plasma generation frequencies for the oil-contaminating solutions were higher than that for the pure IPA solution. In addition, the plasma temperature in the compound liquids including both oil and IPA was higher than that in the pure IPA and oil solutions. A combination of the plasma temperature measurements and plasma composition analysis indicated that the hydrogen radicals generated in a chemical solution containing the equal volumes of IPA and oil were almost the same amounts of H and H{sup +}, while those produced in the other solutions were mainly H.

  14. C2F6/O2/Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Films

    NASA Astrophysics Data System (ADS)

    Yuan, Ying; Ye, Chao; Chen, Tian; Ge, Shuibing; Liu, Huimin; Cui, Jin; Xu, Yijun; Deng, Yanhong; Ning, Zhaoyuan

    2012-01-01

    This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency (LF) power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between O2 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

  15. Etching of glass microchips with supercritical water.

    PubMed

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  16. Effect of methane concentration in hydrogen plasma on hydrogen impurity incorporation in thick large-grained polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Tang, C. J.; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2015-09-01

    We investigate the impact of methane concentration in hydrogen plasma on the growth of large-grained polycrystalline diamond (PCD) films and its hydrogen impurity incorporation. The diamond samples were produced using high CH4 concentration in H2 plasma and high power up to 4350 W and high pressure (either 105 or 110 Torr) in a microwave plasma chemical vapor deposition (MPCVD) system. The thickness of the free-standing diamond films varies from 165 μm to 430 μm. Scanning electron microscopy (SEM), micro-Raman spectroscopy and Fourier-transform infrared (FTIR) spectroscopy were used to characterize the morphology, crystalline and optical quality of the diamond samples, and bonded hydrogen impurity in the diamond films, respectively. Under the conditions employed here, when methane concentration in the gas phase increases from 3.75% to 7.5%, the growth rate of the PCD films rises from around 3.0 μm/h up to 8.5 μm/h, and the optical active bonded hydrogen impurity content also increases more than one times, especially the two CVD diamond specific H related infrared absorption peaks at 2818 and 2828 cm-1 rise strongly; while the crystalline and optical quality of the MCD films decreases significantly, namely structural defects and non-diamond carbon phase content also increases a lot with increasing of methane concentration. Based on the results, the relationship between methane concentration and diamond growth rate and hydrogen impurity incorporation including the form of bonded infrared active hydrogen impurity in CVD diamonds was analyzed and discussed. The effect of substrate temperature on diamond growth was also briefly discussed. The experimental findings indicate that bonded hydrogen impurity in CVD diamond films mainly comes from methane rather than hydrogen in the gas source, and thus can provide experimental evidence for the theoretical study of the standard methyl species dominated growth mechanism of CVD diamonds grown with methane/hydrogen mixtures.

  17. Hydrogen Balmer Series Self-Absorption Measurement in Laser-Induced Air Plasma

    NASA Astrophysics Data System (ADS)

    Gautam, Ghaneshwar; Parigger, Christian

    2015-05-01

    In experimental studies of laser-induced plasma, we use focused Nd:YAG laser radiation to generate optical breakdown in laboratory air. A Czerny-Turner type spectrometer and an ICCD camera are utilized to record spatially and temporally resolved spectra. Time-resolved spectroscopy methods are employed to record plasma dynamics for various time delays in the range of 0.300 microsecond to typically 10 microsecond after plasma initiation. Early plasma emission spectra reveal hydrogen alpha and ionized nitrogen lines for time delays larger than 0.3 microsecond, the hydrogen beta line emerges from the free-electron background radiation later in the plasma decay for time delays in excess of 1 microsecond. The self-absorption analyses include comparisons of recorded data without and with the use of a doubling mirror. The extent of self-absorption of the hydrogen Balmer series is investigated for various time delays from plasma generation. There are indications of self-absorption of hydrogen alpha by comparison with ionized nitrogen lines at a time delay of 0.3 microsecond. For subsequent time delays, self-absorption effects on line-widths are hardly noticeable, despite the fact of the apparent line-shape distortions. Of interest are comparisons of inferred electron densities from hydrogen alpha and hydrogen beta lines as the plasma decays, including assessments of spatial variation of electron density.

  18. Effect of C:F Deposition on Etching of SiCOH Low-k Films in CHF3 60 MHz/2 MHz Dual-Frequency Capacitively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Shi, Guofeng; Ye, Chao; Xu, Yijun; Huang, Hongwei; Yuan, Yuan; Ning, Zhaoyuan

    2010-08-01

    Effect of C:F deposition on SiCOH etching in a CHF3 dual-frequency capacitively couple plasma, driven by a high-frequency source of 60 MHz (HF) and a low-frequency source of 2 MHz (LF) simultaneously, is investigated. With the increase in LF power, the change of C:F layer from dense C:F layer to porous C:F layer and further to C:F filling gaps was observed, which led to the transition from films deposition to films etching. The change of C:F layer is related to the bombardment by energetic ions and CF2 concentration in the plasma. As the LF power increased to 35~40 W, the energetic ions and the low CF2 concentration led to a suppression of C:F deposition. Therefore, the SiCOH films can be etched at higher LF power.

  19. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs

    SciTech Connect

    Abernathy, C.R,; Han, J.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Lee, J.W.; Maeda, T.; Pearton, S.J.; Shul, R.J.

    1998-12-04

    BC13, with addition of Nz, Ar or Hz, is found to provide smooth anisotropic pattern transfer in GaAs, GaN, GaP, GaSb and AIGriAs under Inductively Coupled Plasma conditions, Maxima in the etch rates for these materials are observed at 33% N2 or 87$'40 Hz (by flow) addition to BC13, whereas Ar addition does not show this behavior. Maximum etch rates are typically much higher for GaAs, Gap, GaSb and AIGaAs (-1,2 @rein) than for GaN (-0.3 ymu'min) due to the higher bond energies of the iatter. The rates decrease at higher pressure, saturate with source power (ion flux) and tend to show maxima with chuck power (ion energy). The etched surfaces remain stoichiometric over abroad range of plasma conditions.

  20. Effect of hydrogen plasma pretreatment on the growth of silicon nanowires and their employment as the anode material of lithium secondary batteries.

    PubMed

    Kim, Jung Sub; Byun, Dongjin; Lee, Joong Kee

    2012-02-01

    Silicon nanowires were grown from a silane and argon gas mixture directly on a stainless steel substrate by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and used without any further treatment as the anode in the fabrication of lithium ion batteries. It was found that suitable pretreatment of the stainless steel substrate was required for the satisfactory growth of the silicon nanowires. In this study, the substrates were polished, etched in HF solution, coated with an aluminum catalyst layer with a thickness of c.a. 10 nm and then treated with a hydrogen plasma before the growth of the silicon nanowires. SEM (Scanning Electron Microscopy) and AFM (Atomic Force Microscopy) analyses showed that the grain size and surface roughness were increased after the hydrogen plasma pretreatment. The electrochemical performance of the silicon nanowires anode was also improved when the aluminum coated stainless steel substrate was exposed to the plasma for 20 min or longer; the initial coulombic efficiency was increased from 69.7% to 82% at a current density of 30 mA cm(-2).

  1. Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of NF{sub 3} and O{sub 2}

    SciTech Connect

    Tasaka, A.; Watanabe, E.; Kai, T.; Shimizu, W.; Kanatani, T.; Inaba, M.; Tojo, T.; Tanaka, M.; Abe, T.; Ogumi, Z.

    2007-03-15

    Reactive ion etching (RIE) of poly-{beta}-SiC was investigated in the NF{sub 3}/O{sub 2} mixture gas plasma. The addition of 10% oxygen concentration to the NF{sub 3} plasma increased the etching rate to {approx}80 nm/min at a total pressure of 10 Pa and 997 nm/min at a total pressure of 20 Pa. The ratio of increase in etching rate against that in the pure NF{sub 3} plasma was {approx}43%. RIE for longer than 30 min in the 90% NF{sub 3} and 10% O{sub 2} mixture gas plasma gave a much smoother surface than that etched in the pure NF{sub 3} plasma. However, the further addition of O{sub 2} decreased the etching rate. Optical-emission spectra indicated the presence of an oxygen radical, in addition to fluorine radical and molecular nitrogen cations, in the NF{sub 3}/O{sub 2} mixture gas plasma. X-ray photoemission spectroscopy analysis of the etched samples revealed that the SiO{sub 2} layer was formed on the surface at the higher O{sub 2} concentration. The role of oxygen in the NF{sub 3}/O{sub 2} mixture gas plasma was elucidated. Scanning electron microscopy observation revealed that many thornlike substances, i.e., spikes, were formed on the SiC surface during RIE at the total pressure of 10 Pa. Images of the cross section of spike formed during RIE at the total pressure of 2 Pa also indicated that the sputtered aluminum particle from a mask may be preferentially deposited on the top of carbon-rich island formed on the SiC surface and act as a micromask together with carbon on the carbon-rich island to form a thornlike spike. An etching model of the SiC surface and the mechanism on formation and growth of the spike on the SiC surface in the NF{sub 3}/O{sub 2} mixture gas plasma are proposed.

  2. Graphene nanoribbons: Relevance of etching process

    SciTech Connect

    Simonet, P. Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K.

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  3. The strength of side chain hydrogen bonds in the plasma membrane

    NASA Astrophysics Data System (ADS)

    Hristova, Kalina; Sarabipour, Sarvenaz

    2013-03-01

    There are no direct quantitative measurements of hydrogen bond strengths in membrane proteins residing in their native cellular environment. To address this knowledge gap, here we use fluorescence resonance energy transfer (FRET) to measure the impact of hydrogen bonds on the stability of a membrane protein dimer in vesicles derived from eukaryotic plasma membranes, and we compare these results to previous measurements of hydrogen bond strengths in model lipid bilayers. We demonstrate that FRET measurements of membrane protein interactions in plasma membrane vesicles have the requisite sensitivity to quantify the strength of hydrogen bonds. We find that the hydrogen bond-mediated stabilization in the plasma membrane is small, only -0.7 kcal/mole. It is the same as in model lipid bilayers, despite the different nature and dielectric properties of the two environments.

  4. Inactivation of possible micromycete food contaminants using the low-temperature plasma and hydrogen peroxide

    SciTech Connect

    Čeřovský, M.; Khun, J.; Rusová, K.; Scholtz, V.; Soušková, H.

    2013-09-15

    The inhibition effect of hydrogen peroxide aerosol, low-temperature plasma and their combinations has been studied on several micromycetes spores. The low-temperature plasma was generated in corona discharges in the open air apparatus with hydrogen peroxide aerosol. Micromycete spores were inoculated on the surface of agar plates, exposed solely to the hydrogen peroxide aerosol, corona discharge or their combination. After incubation the diameter of inhibition zone was measured. The solely positive corona discharge exhibits no inactivation effect, the solely negative corona discharge and solely hydrogen peroxide aerosol exhibit the inactivation effect, however their combinations exhibit to be much more effective. Low-temperature plasma and hydrogen peroxide aerosol present a possible alternative method of microbial decontamination of food, food packages or other thermolabile materials.

  5. Hydrogen production from alcohol reforming in a microwave ‘tornado’-type plasma

    NASA Astrophysics Data System (ADS)

    Tatarova, E.; Bundaleska, N.; Dias, F. M.; Tsyganov, D.; Saavedra, R.; Ferreira, C. M.

    2013-12-01

    In this work, an experimental investigation of microwave plasma-assisted reforming of different alcohols is presented. A microwave (2.45 GHz) ‘tornado’-type plasma with a high-speed tangential gas injection (swirl) at atmospheric pressure is applied to decompose alcohol molecules, namely methanol, ethanol and propanol, and to produce hydrogen-rich gas. The reforming efficiency is investigated both in Ar and Ar+ water vapor plasma environments. The hydrogen yield dependence on the partial alcohol flux is analyzed. Mass spectrometry and Fourier transform infrared spectroscopy are used to detect the outlet gas products from the decomposition process. Hydrogen, carbon monoxide, carbon dioxide and solid carbon are the main decomposition by-products. A significant increase in the hydrogen production rate is observed with the addition of a small amount of water. Furthermore, optical emission spectroscopy is applied to detect the radiation emitted by the plasma and to estimate the gas temperature and electron density.

  6. [The Clinical Application Status and Development Trends of Hydrogen Peroxide Low Temperature Plasma Sterilizers].

    PubMed

    Zhuang, Min; Zheng, Yunxin; Chen, Ying; Hou, Bin; Xu, Zitian

    2016-01-01

    The hydrogen peroxide low temperature plasma sterilization technology solved the problems of thermo-sensitive materials' disinfection and sterilization based on its development and unique characteristics. This paper introduced the researches of clinical application quality control, and showed the hydrogen peroxide low temperature plasma sterilizers were being widely used in hospitals and highly recognized. According to the clinical data and the literatures of the domestic equipment in preliminary application, it could be concluded that the technology maturity of domestic hydrogen peroxide low temperature plasma sterilizers was in a high level. The advantages of using domestic hydrogen peroxide low temperature plasma sterilizers to do disinfection and sterilization included lower cost, safer, faster and non-toxic, etc. Also the management system should be improved and the clinical staff should master the technical essentials, obey the procedures strictly, verify periodically and offer full monitoring to upgrade the quality of sterilization. PMID:27197500

  7. [The Clinical Application Status and Development Trends of Hydrogen Peroxide Low Temperature Plasma Sterilizers].

    PubMed

    Zhuang, Min; Zheng, Yunxin; Chen, Ying; Hou, Bin; Xu, Zitian

    2016-01-01

    The hydrogen peroxide low temperature plasma sterilization technology solved the problems of thermo-sensitive materials' disinfection and sterilization based on its development and unique characteristics. This paper introduced the researches of clinical application quality control, and showed the hydrogen peroxide low temperature plasma sterilizers were being widely used in hospitals and highly recognized. According to the clinical data and the literatures of the domestic equipment in preliminary application, it could be concluded that the technology maturity of domestic hydrogen peroxide low temperature plasma sterilizers was in a high level. The advantages of using domestic hydrogen peroxide low temperature plasma sterilizers to do disinfection and sterilization included lower cost, safer, faster and non-toxic, etc. Also the management system should be improved and the clinical staff should master the technical essentials, obey the procedures strictly, verify periodically and offer full monitoring to upgrade the quality of sterilization.

  8. Self-Induced Surface Texturing of AL2O3 by Means of Inductively Coupled Plasma Reactive Ion Etching in CL2 Chemistry

    NASA Astrophysics Data System (ADS)

    Batoni, Paolo; Stokes, Edward B.; Shah, Trushant K.; Hodge, Michael D.; Suleski, Thomas J.

    2007-06-01

    In this work we investigate a pseudo-random surface texturing technique of sapphire by means of inductively coupled plasma reacting ion etching in chlorine chemistry, for which no sophisticated lithographic process is required. Such a surface texturing technique, which we believe offers indicative promise for enhanced light extraction in deep ultraviolet light-emitting diodes has allowed us to texture sapphire samples having a surface larger than 1 cm2 with controlled structures. Fabrication parameters have been characterized, and textured Al2O3 surfaces having submicron features, and nano-scale periodicity have been obtained. Performance, and characterization of our textured Al2O3 surfaces is the hinge of addition work in progress.

  9. Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

    SciTech Connect

    Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng

    2010-07-15

    This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

  10. Hydrogen-dominated plasma, due to silane depletion, for microcrystalline silicon deposition

    SciTech Connect

    Howling, A. A.; Sobbia, R.; Hollenstein, Ch.

    2010-07-15

    Plasma conditions for microcrystalline silicon deposition generally require a high flux of atomic hydrogen, relative to SiH{sub {alpha}=0{yields}3} radicals, on the growing film. The necessary dominant partial pressure of hydrogen in the plasma is conventionally obtained by hydrogen dilution of silane in the inlet flow. However, a hydrogen-dominated plasma environment can also be obtained due to plasma depletion of the silane in the gas mixture, even up to the limit of pure silane inlet flow, provided that the silane depletion is strong enough. At first sight, it may seem surprising that the composition of a strongly depleted pure silane plasma consists principally of molecular hydrogen, without significant contribution from the partial pressure of silane radicals. The aim here is to bring some physical insight by means of a zero-dimensional, analytical plasma chemistry model. The model is appropriate for uniform large-area showerhead reactors, as shown by comparison with a three-dimensional numerical simulations. The SiH{sub {alpha}} densities remain very low because of their rapid diffusion and surface reactivity, contributing to film growth which is the desired scenario for efficient silane utilization. Significant SiH{sub {alpha}} densities due to poor design of reactor and gas flow, on the other hand, would result in powder formation wasting silane. Conversely, hydrogen atoms are not deposited, but recombine on the film surface and reappear as molecular hydrogen in the plasma. Therefore, in the limit of extremely high silane depletion fraction (>99.9%), the silane density falls below the low SiH{sub {alpha}} densities, but only the H radical can eventually reach significant concentrations in the hydrogen-dominated plasma.

  11. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N–H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  12. Excitation mechanism of hydrogen Balmer lines in a fast plasma-mixing device

    NASA Astrophysics Data System (ADS)

    Kirkici, Hulya

    1995-06-01

    The emission of hydrogen Balmer series and the laser oscillation of Hβ at 486.12 nm and Hγ at 434.06 nm in hydrogen-neon discharge operated in a pulsed mode have been reported by Dezenber and Willett [IEEE J. Quantum Electron. QE-7, 491 (1971)]. In their work, a ``two step'' excitation of molecular hydrogen to molecular ionic states, followed by dissociation of hydrogen to excited atomic species, was proposed as the main excitation mechanism. The present work was conducted to study the excitation mechanism of the hydrogen Hα line at 656.28 nm in a flowing, afterglow plasma, by using a crossed-beam plasma-mixing device. It was found that the excitation of the Hα line in this device is due to a direct dissociative energy transfer from neon metastables to molecular hydrogen.

  13. Processes with neutral hydrogen and deuterium molecules relevant to edge plasma in tokamaks

    NASA Astrophysics Data System (ADS)

    Cadez, I.; Markelj, S.; Rupnik, Z.; Pelicon, P.

    2008-07-01

    Detailed understanding and characterization of plasma-wall interaction and edge plasma in present tokamaks and future fusion reactors is becoming more and more important due to the ITER project. Involved processes determine the physical and chemical sputtering of the wall material, fuel retention in exposed material, edge plasma properties, disruption phenomena etc. Neutral hydrogen atoms and molecules are present in the edge plasma. They are continuously generated by ion recombination on the wall of the fusion reactor and on the other plasma facing components and subsequently reemitted in the plasma. Neutral molecules are especially important for plasma detachment in tokamak divertors. The interaction of excited neutral molecules with the walls and their importance for the edge plasma is still not well understood since there are not many experimental studies of relevant processes. Moreover, spectroscopic results from tokamak edge plasma are dominated by processes involving ions and electrons, so that direct evidence of the influence of neutrals is difficult to extract. Direct correlation of the observed phenomena to the processes with neutrals is mainly possible by numerical simulations. We have constructed a set-up for vibrational spectroscopy of hydrogen molecules (H_2 and D_2) that is based on the properties of the dissociative electron attachment in hydrogen in order to facilitate dedicated experimental studies of relevant processes with hydrogen molecules. For the same purpose we also developed a technique for in-situ hydrogen depth profiling on the samples exposed to the controlled hydrogen atmosphere. This is done by Ion Beam Analytical (IBA) method ERAD (Elastic Recoil Detection Analysis), utilizing 4.2 MeV probing beam of ^7Li^2+ ions. A short description of experimental techniques and results on chemical erosion of graphite layers, production of vibrationally excited hydrogen molecules on tungsten and isotope exchange on tungsten are to be presented in

  14. Optimum plasma grid bias for a negative hydrogen ion source operation with Cs

    NASA Astrophysics Data System (ADS)

    Bacal, Marthe; Sasao, Mamiko; Wada, Motoi; McAdams, Roy

    2016-02-01

    The functions of a biased plasma grid of a negative hydrogen (H-) ion source for both pure volume and Cs seeded operations are reexamined. Proper control of the plasma grid bias in pure volume sources yields: enhancement of the extracted negative ion current, reduction of the co-extracted electron current, flattening of the spatial distribution of plasma potential across the filter magnetic field, change in recycling from hydrogen atomic/molecular ions to atomic/molecular neutrals, and enhanced concentration of H- ions near the plasma grid. These functions are maintained in the sources seeded with Cs with additional direct emission of negative ions under positive ion and neutral hydrogen bombardment onto the plasma electrode.

  15. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  16. Plasma test on industrial diamond powder in hydrogen and air for fracture strength study

    NASA Astrophysics Data System (ADS)

    Chary, Rohit Asuri Sudharshana

    Diamonds are the most precious material all over the world. Ever since their discovery, the desire for natural diamonds has been great; recently, the demand has steeply increased, leading to scarcity. For example, in 2010, diamonds worth $50 billion were marketed. This increased demand has led to discovering alternative sources to replace diamonds. The diamond, being the hardest material on earth, could be replaced with no other material except another diamond. Thus, the industrial or synthetic diamond was invented. Because of extreme hardness is one of diamond's properties, diamonds are used in cutting operations. The fracture strength of diamond is one of the crucial factors that determine its life time as a cutting tool. Glow discharge is one of the techniques used for plasma formation. The glow discharge process is conducted in a vacuum chamber by ionizing gas atoms. Ions penetrate into the atomic structure, ejecting a secondary electron. The objective of this study is to determine the change in fracture strength of industrial diamond powder before and after plasma treatment. This study focuses mainly on the change in crystal defects and crushing strength (CS) of industrial diamond powder after the penetration of hydrogen gas, air and hydrogen-air mixture ions into the sample powder. For this study, an industrial diamond powder sample of 100 carats weight, along with its average fracture strength value was received from Engis Corporation, Illinois. The sample was divided into parts, each weighing 10-12 carats. At the University of Nevada, Las Vegas (UNLV), a plasma test was conducted on six sample parts for a total of 16 hours on each part. The three gas types mentioned above were used during plasma tests, with the pressure in vacuum chamber between 200 mTorr and 2 Torr. The plasma test on four sample parts was in the presence of hydrogen-air mixture. The first sample had chamber pressures between 200 mTorr and 400 mTorr. The remaining three samples had chamber

  17. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

    SciTech Connect

    Berube, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

    2009-09-15

    The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

  18. Aspect ratio dependent etching lag reduction in deep silicon etch processes

    SciTech Connect

    Lai, S.L.; Johnson, D.; Westerman, R.

    2006-07-15

    Microelectromechanical system (MEMS) device fabrication often involves three dimensional structures with high aspect ratios. Moreover, MEMS designs require structures with different dimensions and aspect ratios to coexist on a single microchip. There is a well-documented aspect ratio dependent etching (ARDE) effect in deep silicon etching processes. For features with different dimensions etched simultaneously, the ARDE effect causes bigger features to be etched at faster rates. In practice, ARDE effect has many undesired complications to MEMS device fabrication. This article presents a physical model to describe the time division multiplex (TDM) plasma etch processes and thereafter the experimental results on ARDE lag reduction. The model breaks individual plasma etch cycles in the TDM plasma etch processes into polymer deposition, polymer removal, and spontaneous silicon etching stages. With the insights gained from the model and control over the passivation and etch steps, it has been demonstrated that ARDE lag can be controlled effectively. Experiments have shown that a normal ARDE lag can be changed to an inverse ARDE lag. Under optimized conditions, the ARDE lag is reduced to below 2%-3% for trenches with widths ranging from 2.5 to 100 {mu}m, while maintaining good etch profile in trenches with different dimensions. Such results are achieved at etch rates exceeding 2 {mu}m/min.

  19. Replacement of hydrogen peroxide cleaning with oxygen plasma

    NASA Astrophysics Data System (ADS)

    Adams, B. E.

    1992-03-01

    Comparison between the standard peroxide cleaning method and an oxygen plasma modified version was run on thin film bond monitors. The plasma modified version substituted oxygen plasma for the peroxide cleaning step in the process and reduced the DI rinse water temperature from 75 C to 25 C. A direct surface cleanliness comparison was made between the two cleaning methods using Auger spectroscopy. A beam lead and ribbon bonding experiment was also run on plasma-cleaned networks. Results of both experiments indicate that plasma cleaning is superior to peroxide cleaning and that reliable bonding can be done on plasma-cleaned thin film networks.

  20. Spectroscopic ellipsometry on Si/SiO{sub 2}/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

    SciTech Connect

    Eren, Baran; Fu, Wangyang; Marot, Laurent Calame, Michel; Steiner, Roland; Meyer, Ernst

    2015-01-05

    In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation.

  1. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  2. Energy density dependence of hydrogen combustion efficiency in atmospheric pressure microwave plasma

    SciTech Connect

    Yoshida, T.; Ezumi, N.; Sawada, K.; Tanaka, Y.; Tanaka, M.; Nishimura, K.

    2015-03-15

    The recovery of tritium in nuclear fusion plants is a key issue for safety. So far, the oxidation procedure using an atmospheric pressure plasma is expected to be part of the recovery method. In this study, in order to clarify the mechanism of hydrogen oxidation by plasma chemistry, we have investigated the dependence of hydrogen combustion efficiency on gas flow rate and input power in the atmospheric pressure microwave plasma. It has been found that the combustion efficiency depends on energy density of absorbed microwave power. Hence, the energy density is considered as a key parameter for combustion processes. Also neutral gas temperatures inside and outside the plasma were measured by an optical emission spectroscopy method and thermocouple. The result shows that the neutral gas temperature in the plasma is much higher than the outside temperature of plasma. The high neutral gas temperature may affect the combustion reaction. (authors)

  3. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  4. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  5. Detector and energy analyzer for energetic-hydrogen in beams and plasmas

    DOEpatents

    Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

    1988-11-01

    A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

  6. Detector and energy analyzer for energetic-hydrogen in beams and plasmas

    DOEpatents

    Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

    1988-01-01

    A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

  7. Hydrogen Storage in Diamond Powder Utilizing Plasma NaF Surface Treatment for Fuel Cell Applications

    SciTech Connect

    Leal, David A.; Leal-Quiros, E.; Velez, Angel; Prelas, Mark A.; Gosh, Tushar

    2006-12-04

    Hydrogen Fuel Cells offer the vital solution to the world's socio-political dependence on oil. Due to existing difficulty in safe and efficient hydrogen storage for fuel cells, storing the hydrogen in hydrocarbon compounds such as artificial diamond is a realistic solution. By treating the surface of the diamond powder with a Sodium Fluoride plasma exposure, the surface of the diamond is cleaned of unwanted molecules. Due to fluorine's electro negativity, the diamond powder is activated and ready for hydrogen absorption. These diamond powder pellets are then placed on a graphite platform that is heated by conduction in a high voltage circuit made of tungsten wire. Then, the injection of hydrogen gas into chamber allows the storage of the Hydrogen on the surface of the diamond powder. By neutron bombardment in the nuclear reactor, or Prompt Gamma Neutron Activation Analysis, the samples are examined for parts per million amounts of hydrogen in the sample. Sodium Fluoride surface treatment allows for higher mass percentage of stored hydrogen in a reliable, resistant structure, such as diamond for fuel cells and permanently alters the diamonds terminal bonds for re-use in the effective storage of hydrogen. The highest stored amount utilizing the NaF plasma surface treatment was 22229 parts per million of hydrogen in the diamond powder which amounts to 2.2229% mass increase.

  8. Synthesis of superlow friction carbon films from highly hydrogenated methane plasmas.

    SciTech Connect

    Erdemir, A.; Eryilmaz, O. L.; Nilufer, I. B.; Fenske, G. R.

    2000-10-13

    In this study, we investigated the friction and wear performance of diamondlike carbon films (DLC) derived from increasingly hydrogenated methane plasmas. The films were deposited on steel substrates by a plasma-enhanced chemical vapor deposition process at room temperature and the tribological tests were performed in dry nitrogen. Tests results revealed a close correlation between the hydrogen in source gas plasma and the friction and wear coefficients of the DLC films. Specifically, films grown in plasmas with higher hydrogen-to-carbon ratios had much lower friction coefficients and wear rates than did films derived from source gases with lower hydrogen-to-carbon ratios. The lowest friction coefficient (0.003) was achieved with a film derived from 25% methane--75% hydrogen, while a coefficient of 0.015 was found for films derived from pure methane. Similar correlations were observed for wear rates. Films derived from hydrogen-rich plasmas had the least wear, while films derived from pure methane suffered the highest wear. We used a combination of surface analytical methods to characterize the structure and chemistry of the DLC films and worn surfaces.

  9. Thermodynamic assessment and experimental verification of reactive ion etching of magnetic metal elements

    SciTech Connect

    Kim, Taeseung; Chen, Jack Kun-Chieh; Chang, Jane P.

    2014-07-01

    A thermodynamic analysis of etch chemistries for Co, Fe, and Ni using a combination of hydrogen, oxygen, and halogen gases suggested that a single etchant does not work at 300 K; however, a sequential exposure to multiple etchants results in sufficiently high partial pressure of the reaction products for the process to be considered viable. This sequential dose utilized the two reactions, a surface halogenation followed by the secondary etchant exposure. (MX{sub 2} (c) + 3Y →MY(g) + 2XY(g), where M = Co, Fe, Ni; X = F, Cl, Br; Y = O, H) The volatilization reaction induced by sequential plasma exposure changed the equilibrium point, increasing the partial pressure of the etch product. Amongst all combinations, Cl{sub 2} or Br{sub 2} plasmas followed by H{sub 2} plasma were the most effective. From both the gas phase diagnostics and surface composition analysis, H{sub 2} plasma alone could not etch metallic Co, Fe, and Ni films but alternating doses of Cl{sub 2} and H{sub 2} plasmas resulted in more effective removal of chlorinated metals and increased the overall etch rate.

  10. The contribution of dissociative processes to the production of atomic lines in hydrogen plasmas

    NASA Technical Reports Server (NTRS)

    Kunc, J. A.

    1985-01-01

    The contribution of molecular dissociative processes to the production of atomic lines is considered for a steady-state hydrogen plasma. If the contribution of dissociative processes is dominant, a substantial simplification in plasma diagnostics can be achieved. Numerical calculations have been performed for the production of Balmer alpha, beta, and gamma lines in hydrogen plasmas with medium and large degrees of ionization (x greater than about 0.0001) and for electron temperatures of 5000-45,000 K and electron densities of 10 to the 10th to 10 to the 16th/cu cm.

  11. Effect of Ar and N{sub 2} addition on CH{sub 4}-H{sub 2} based chemistry inductively coupled plasma etching of HgCdTe

    SciTech Connect

    Boulard, F.; Baylet, J.; Cardinaud, C.

    2009-07-15

    Mercury cadmium telluride (MCT) CH{sub 4}-H{sub 2} based chemistry inductively coupled plasma (ICP) etching mechanisms are investigated. The effect of Ar and N{sub 2} addition in the mixture on plasma and MCT surface characteristics are studied by Langmuir probe, mass spectrometry, and x-ray photoelectron spectroscopy (XPS). In the authors' conditions, the HgTe faster removal than CdTe leads to the formation of a CdTe rich layer in the first 30 s of plasma exposure. Ion flux intensity and composition are only slightly influenced by N{sub 2} addition while a strong effect is shown on neutral species by the formation of NH{sub 3}, HCN, and the increase in CH{sub 3} radical density. At the opposite, Ar addition to the gas mixture leads to a total ion flux increase and promote CH{sub 3}{sup +} formation while small changes are observed on neutral species. In our low pressure and high density conditions, same order of magnitude of ion and neutral CH{sub 3} flux on MCT surface is found, suggesting a chemical contribution of CH{sub 3}{sup +} ions in MCT etching. This is confirmed by a strong correlation of the MCT etching yield versus total (neutral and ionic) CH{sub 3} flux. These results suggest that the etching is limited by the supply of CH{sub 3} to the surface.

  12. Hydrogen recycling study by Balmer lines emissions in linear plasma machine TPE

    NASA Astrophysics Data System (ADS)

    Shimada, K.; Tanabe, T.; Causey, R.; Venhaus, T.; Okuno, K.

    2001-03-01

    We have investigated the influence of target materials and temperatures on Balmer series emission in a linear plasma apparatus, Tritium Plasma Experiment (TPE). The intensities of the Balmer series emission in front of the target were higher for heavier mass target and also for lower target temperature, showing rather linear relationship between the emission intensity and hydrogen reflection coefficient. For exothermic hydrogen occluders of Ti and Ta, the intensity ratio of Dβ/ Dα increased with the target temperature markedly, whereas the intensity ratio stayed rather constant for endothermic hydrogen occluders of Ni, Cu and W. This is a clear demonstration that the target materials and temperatures modify the boundary plasma. In addition the intensity ratio Dβ/Dα is not simply a function of plasma temperature but has clear target temperature dependence.

  13. Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

  14. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    SciTech Connect

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.

  15. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    PubMed

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing. PMID:24346308

  16. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    NASA Astrophysics Data System (ADS)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  17. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    PubMed

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  18. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part II: InP, InGaAs, InGaAsP, InAs and AllnAs

    SciTech Connect

    Abernathy, C.R.; Han, J.; Hobson, W.S.; Hong, J.; Lambers, E.S.; Lee, J.W.; Maeda, T.; Pearton, S.J.; Shul, R.J

    1998-12-02

    A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is reported. Etch rates in the range 1,500-3,000 &min. are obtained for all the materials at moderate source powers (500 W), with the rates being a strong function of discharge composition, rf chuck power and pressure. Typical root-mean-square surface roughness of-5 nm were obtained for InP, which is worse than the values obtained for Ga-based materials under the same conditions (-1 run). The near surface of etched samples is typically slightly deficient in the group V element, but the depth of this deficiency is small (a few tens of angstroms).

  19. Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors.

    PubMed

    Ma, Yingjie; Zhang, Yonggang; Gu, Yi; Chen, Xingyou; Shi, Yanhui; Ji, Wanyan; Xi, Suping; Du, Ben; Li, Xiaoliang; Tang, Hengjing; Li, Yongfu; Fang, Jiaxiong

    2016-04-01

    Effects of mesa etching and geometry on InGaAs/InAlAs avalanche photodiodes (APDs) were investigated by using both wet and inductively coupled plasma (ICP) etching with different mesa shapes as well as etchants. It was found that the mesa geometry had no evident impact on APDs' characteristics regardless of the etching techniques applied. Besides, ICP-etched APDs showed faster punch-through, suppressed premature surface breakdown and lower dark current behaviors compared to the wet-etched devices. Substantially suppressed surface leakage was also observed for ICP-etched devices, showing 1 and 3 orders of magnitude better at room temperature and 77 K respectively, and over 1 order of magnitude higher surface resistivity up to 4×107 Ω cm, in comparison to the wet-etched APDs. Introduction of extra hydrogen and Ar plasma in ICP etching led to detrimental effects to APDs' performance by enhancing the tunneling or recombination at surfaces. Those experimental results were clearly interpreted based on the surface state theories. PMID:27137065

  20. Wafer-level fabrication of a high-silica v-groove for fiber-optic packaging using deep dry-etching with a dual-frequency high-density plasma

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Won; Heo, Gi-Seok; Choi, Bum-Ho; Kim, Young-Baek; Oh, Jin-Kyoung; Lee, Hyung-Jong

    2015-10-01

    We developed a procedure for fabricating deep silica v-grooves of about 70 μm for fiber-optic applications by using a deep dry-etching with a dual-frequency high-density plasma source. This procedure has the advantages of sub-micron precision with wafer-level productivity and a high etching speed of 0.7 μm/sec. An electro-plated hard mask as thick as 8 μm that can endure the deep dry-etch was also developed. In particular, the angular inclination of the etched groove was controllable by using the flow of C4F8 gas. A fiber array block was assembled by using a v-groove chip. The location error of the fiber cores in the block was measured to be less than 0.3 μm. This confirms that the dry-etched silica v-grooves can be applied to the packaging of optical devices with wafer-level productivity and high precision.

  1. Residual gas entering high density hydrogen plasma: rarefaction due to rapid heating

    NASA Astrophysics Data System (ADS)

    Den Harder, N.; Schram, D. C.; Goedheer, W. J.; De Blank, H. J.; Van de Sanden, M. C. M.; Van Rooij, G. J.

    2015-04-01

    The interaction of background molecular hydrogen with magnetized (0.4 T) high density (1-5 × 1020 m-3) low temperature (˜3 eV) hydrogen plasma was inferred from the Fulcher band emission in the linear plasma generator Pilot-PSI. In the plasma center, vibrational temperatures reached 1 eV. Rotational temperatures obtained from the Q(v = 1) branch were systematically ˜0.1 eV lower than the Q(v = 0) branch temperatures, which were in the range of 0.4-0.8 eV, typically 60% of the translational temperature (determined from the width of the same spectral lines). The latter is attributed to preferential excitation of translational degrees of freedom in collisions with ions on the timescale of their in-plasma residence time. Doppler shifts revealed co-rotation of the molecules with the plasma at an angular velocity an order of magnitude lower, confirming that the Fulcher emission connects to background molecules. A simple model estimated a factor of 90 rarefaction of the molecular density at the center of the plasma column compared to the residual gas density. Temperature and density information was combined to conclude that ion-conversion molecular assisted recombination dominates plasma recombination at a rate of 1 × 10-15 m3 s-1. The observations illustrate the general significance of rapid molecule heating in high density hydrogen plasma for estimating molecular processes and how this affects Fulcher spectroscopy.

  2. Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

    PubMed

    Eren, Baran; Hug, Dorothée; Marot, Laurent; Pawlak, Rémy; Kisiel, Marcin; Steiner, Roland; Zumbühl, Dominik M; Meyer, Ernst

    2012-01-01

    Single- and multilayer graphene and highly ordered pyrolytic graphite (HOPG) were exposed to a pure hydrogen low-temperature plasma (LTP). Characterizations include various experimental techniques such as photoelectron spectroscopy, Raman spectroscopy and scanning probe microscopy. Our photoemission measurement shows that hydrogen LTP exposed HOPG has a diamond-like valence-band structure, which suggests double-sided hydrogenation. With the scanning tunneling microscopy technique, various atomic-scale charge-density patterns were observed, which may be associated with different C-H conformers. Hydrogen-LTP-exposed graphene on SiO(2) has a Raman spectrum in which the D peak to G peak ratio is over 4, associated with hydrogenation on both sides. A very low defect density was observed in the scanning probe microscopy measurements, which enables a reverse transformation to graphene. Hydrogen-LTP-exposed HOPG possesses a high thermal stability, and therefore, this transformation requires annealing at over 1000 °C.

  3. [Study on the Emission Spectrum of Hydrogen Production with Microwave Discharge Plasma in Ethanol Solution].

    PubMed

    Sun, Bing; Wang, Bo; Zhu, Xiao-mei; Yan, Zhi-yu; Liu, Yong-jun; Liu, Hui

    2016-03-01

    Hydrogen is regarded as a kind of clean energy with high caloricity and non-pollution, which has been studied by many experts and scholars home and abroad. Microwave discharge plasma shows light future in the area of hydrogen production from ethanol solution, providing a new way to produce hydrogen. In order to further improve the technology and analyze the mechanism of hydrogen production with microwave discharge in liquid, emission spectrum of hydrogen production by microwave discharge plasma in ethanol solution was being studied. In this paper, plasma was generated on the top of electrode by 2.45 GHz microwave, and the spectral characteristics of hydrogen production from ethanol by microwave discharge in liquid were being studied using emission spectrometer. The results showed that a large number of H, O, OH, CH, C2 and other active particles could be produced in the process of hydrogen production from ethanol by microwave discharge in liquid. The emission spectrum intensity of OH, H, O radicals generated from ethanol is far more than that generated from pure water. Bond of O-H split by more high-energy particles from water molecule was more difficult than that from ethanol molecule, so in the process of hydrogen production by microwave discharge plasma in ethanol solution; the main source of hydrogen was the dehydrogenation and restructuring of ethanol molecules instead of water decomposition. Under the definite external pressure and temperature, the emission spectrum intensity of OH, H, O radicals increased with the increase of microwave power markedly, but the emission spectrum intensity of CH, C2 active particles had the tendency to decrease with the increase of microwave power. It indicated that the number of high energy electrons and active particles high energy electron energy increased as the increase of microwave power, so more CH, C2 active particles were split more thoroughly. PMID:27400531

  4. [Study on the Emission Spectrum of Hydrogen Production with Microwave Discharge Plasma in Ethanol Solution].

    PubMed

    Sun, Bing; Wang, Bo; Zhu, Xiao-mei; Yan, Zhi-yu; Liu, Yong-jun; Liu, Hui

    2016-03-01

    Hydrogen is regarded as a kind of clean energy with high caloricity and non-pollution, which has been studied by many experts and scholars home and abroad. Microwave discharge plasma shows light future in the area of hydrogen production from ethanol solution, providing a new way to produce hydrogen. In order to further improve the technology and analyze the mechanism of hydrogen production with microwave discharge in liquid, emission spectrum of hydrogen production by microwave discharge plasma in ethanol solution was being studied. In this paper, plasma was generated on the top of electrode by 2.45 GHz microwave, and the spectral characteristics of hydrogen production from ethanol by microwave discharge in liquid were being studied using emission spectrometer. The results showed that a large number of H, O, OH, CH, C2 and other active particles could be produced in the process of hydrogen production from ethanol by microwave discharge in liquid. The emission spectrum intensity of OH, H, O radicals generated from ethanol is far more than that generated from pure water. Bond of O-H split by more high-energy particles from water molecule was more difficult than that from ethanol molecule, so in the process of hydrogen production by microwave discharge plasma in ethanol solution; the main source of hydrogen was the dehydrogenation and restructuring of ethanol molecules instead of water decomposition. Under the definite external pressure and temperature, the emission spectrum intensity of OH, H, O radicals increased with the increase of microwave power markedly, but the emission spectrum intensity of CH, C2 active particles had the tendency to decrease with the increase of microwave power. It indicated that the number of high energy electrons and active particles high energy electron energy increased as the increase of microwave power, so more CH, C2 active particles were split more thoroughly.

  5. Copper-assisted, anti-reflection etching of silicon surfaces

    SciTech Connect

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  6. Reduction and dephosphorization of molten iron oxide with hydrogen-argon plasma

    SciTech Connect

    Nakamura, Y.; Ishikawa, H.; Ito, M.

    1981-06-01

    A laboratory-scale test was made in which iron oxide contained in a water-cooled crucible was melted and reduced by using a 10-50% H/sub 2/-Ar transferred arc plasma. The degree of reduction was found to be proportional to the amount of hydrogen fed. The efficiency of hydrogen utilization for the reduction was 50-70%, which is much higher than equilibrium values below 3000 K. This high efficiency was attributable partially to the reactivity of the hydrogen atom in a plasma and partially to the continuous contact of the hydrogen plasma with the molten iron oxide layer floating over the liquid iron formed. During the plasma reduction, evaporative loss of phosphorus was observed. The degree of phosphorus removal depended on the weight ratio, CaO/(SiO/sub 2/+Al/sub 2/O/sub 3/). H/sub 2/-Ar plasma was shown to be far superior for the phosphorus removal, compared with Ar and Ar-N/sub 2/ plasma.

  7. Simulation of DBD plasma actuators, and nanoparticle-plasma interactions in argon-hydrogen CCP RF discharges

    NASA Astrophysics Data System (ADS)

    Mamunuru, Meenakshi

    The focus of this work is modeling and simulation of low temperature plasma discharges (LTPs). The first part of the thesis consists of the study of dielectric barrier (DBD) plasma actuators. Use of DBD plasma actuators on airfoil surfaces is a promising method for increasing airfoil efficiency. Actuators produce a surface discharge that causes time averaged thrust in the neutral gas. The thrust modifies the boundary layer properties of the flow and prevents the occurrence of separation bubbles. In simulating the working of an actuator, the focus is on the spatial characteristics of the thrust produced by the discharge over very short time and space scales. The results provide an understanding of the causes of thrust, and the basic principles behind the actuator operation. The second part of this work focusses on low pressure plasma discharges used for silicon nanoparticle synthesis. When reactive semiconductor precursor gases are passed through capacitively coupled plasma (CCP) radio frequency (RF) reactors, nano sized particles are formed. When the reactors are operated at high enough powers, a very high fraction of the nanoparticles are crystallized in the chamber. Nanoparticle crystallization in plasma is a very complex process and not yet fully understood. It can be inferred from experiments that bulk and surface processes initiated due to energetic ion impaction of the nanoparticles are responsible for reordering of silicon atoms, causing crystallization. Therefore, study of plasma-particle interactions is the first step towards understanding how particles are crystallized. The specific focus of this work is to investigate the experimental evidence that hydrogen gas presence in argon discharges used for silicon nanocrystal synthesis, leads to a superior quality of nanocrystals. Influence of hydrogen gas on plasma composition and discharge characteristics is studied. Via Monte Carlo simulation, distribution of ion energy impacting particles surface is studied

  8. Multiple diagnostics in a high-pressure hydrogen microwave plasma torch

    SciTech Connect

    Torres, J.; Mullen, J. J. A. M. van der; Gamero, A.; Sola, A.

    2010-02-01

    We present an experimental study of a hydrogen plasma produced by a microwave axial injection torch, launching the plasma in a helium-filled chamber. Three different diagnostic methods have been used to obtain the electron density and temperature as follows: The Stark intersection method of Balmer spectral lines (already tested in argon and helium plasmas); the modified Boltzmann-plot showing that the plasma is far from the local thermodynamic equilibrium but ruled by the excitation-saturation balance; and a study by the disturbed bilateral relations theory. All of these diagnostic techniques show a good agreement.

  9. High rate dry etching of GaN, AlN and InN in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar plasmas

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Shul, R.J.; Kilcoyne, S.P.; Crawford, M.H.; Howard, A.J.; Parmeter, J.E.

    1995-05-01

    Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

  10. Hydrogen manufacturing using plasma reformers. [Annual progress report], May 1, 1995--December 31, 1995

    SciTech Connect

    Cohn, D.R.; Bromberg, L.; Hochgreb, S.; O`Brien, C.; Rabinovich, A.

    1995-12-31

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes in particular the possibility of virtual elimination Of C0{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  11. Laser-induced plasma spectroscopy of hydrogen Balmer series in laboratory air.

    PubMed

    Swafford, Lauren D; Parigger, Christian G

    2014-01-01

    Stark-broadened emission profiles for the hydrogen alpha and beta Balmer series lines in plasma are measured to characterize electron density and temperature. Plasma is generated using a typical laser-induced breakdown spectroscopy (LIBS) arrangement that employs a focused Q-switched neodymium-doped yttrium aluminum garnet (Nd : YAG) laser, operating at the fundamental wavelength of 1064 nm. The temporal evolution of the hydrogen Balmer series lines is explored using LIBS. Spectra from the plasma are measured following laser-induced optical breakdown in laboratory air. The electron density is primarily inferred from the Stark-broadened experimental data collected at various time delays. Due to the presence of nitrogen and oxygen in air, the hydrogen alpha and beta lines become clearly discernible from background radiation for time delays of 0.4 and 1.4 μs, respectively.

  12. A comparison of interatomic potentials for modeling tungsten-hydrogen-helium plasma-surface interactions

    NASA Astrophysics Data System (ADS)

    Cusentino, Mary Alice; Hammond, Karl D.; Sefta, Faiza; Juslin, Niklas; Wirth, Brian D.

    2015-08-01

    We compare the hydrogen and helium clustering characteristics of three interatomic potential energy models intended for simulation of plasma-facing materials for fusion applications. Our simulations compare a Finnis-Sinclair potential and two different Tersoff-style bond order potentials created by Juslin et al. (2005) and Li et al. (2011), respectively, with respect to both helium and hydrogen clustering behavior in tungsten. We find significant differences between the Juslin and Li potentials in terms of both hydrogen and helium clustering behavior as well as the spatial distribution of hydrogen below the surface. These simulations are an important test on the road to more accurate models of gas clustering and surface evolution of tungsten divertors in ITER and other plasma devices.

  13. Optimization of the output and efficiency of a high power cascaded arc hydrogen plasma source

    SciTech Connect

    Vijvers, W. A. J.; Gils, C. A. J. van; Goedheer, W. J.; Meiden, H. J. van der; Veremiyenko, V. P.; Westerhout, J.; Lopes Cardozo, N. J.; Rooij, G. J. van; Schram, D. C.

    2008-09-15

    The operation of a cascaded arc hydrogen plasma source was experimentally investigated to provide an empirical basis for the scaling of this source to higher plasma fluxes and efficiencies. The flux and efficiency were determined as a function of the input power, discharge channel diameter, and hydrogen gas flow rate. Measurements of the pressure in the arc channel show that the flow is well described by Poiseuille flow and that the effective heavy particle temperature is approximately 0.8 eV. Interpretation of the measured I-V data in terms of a one-parameter model shows that the plasma production is proportional to the input power, to the square root of the hydrogen flow rate, and is independent of the channel diameter. The observed scaling shows that the dominant power loss mechanism inside the arc channel is one that scales with the effective volume of the plasma in the discharge channel. Measurements on the plasma output with Thomson scattering confirm the linear dependence of the plasma production on the input power. Extrapolation of these results shows that (without a magnetic field) an improvement in the plasma production by a factor of 10 over where it was in van Rooij et al. [Appl. Phys. Lett. 90, 121501 (2007)] should be possible.

  14. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Vesel, Alenka; Mozetic, Miran; Balat-Pichelin, Marianne

    2016-11-01

    Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  15. Research progress on ionic plasmas generated in an intense hydrogen negative ion source

    SciTech Connect

    Takeiri, Y. Tsumori, K.; Nagaoka, K.; Kaneko, O.; Ikeda, K.; Nakano, H.; Kisaki, M.; Tokuzawa, T.; Osakabe, M.; Kondo, T.; Sato, M.; Shibuya, M.; Komada, S.; Sekiguchi, H.; Geng, S.

    2015-04-08

    Characteristics of ionic plasmas, observed in a high-density hydrogen negative ion source, are investigated with a multi-diagnostics system. The ionic plasma, which consists of hydrogen positive- and negative-ions with a significantly low-density of electrons, is generated in the ion extraction region, from which the negative ions are extracted through the plasma grid. The negative ion density, i.e., the ionic plasma density, as high as the order of 1×10{sup 17}m{sup −3}, is measured with cavity ring-down spectroscopy, while the electron density is lower than 1×10{sup 16}m{sup −3}, which is confirmed with millimeter-wave interferometer. Reduction of the negative ion density is observed at the negative ion extraction, and at that time the electron flow into the ionic plasma region is observed to conserve the charge neutrality. Distribution of the plasma potential is measured in the extraction region in the direction normal to the plasma grid surface with a Langmuir probe, and the results suggest that the sheath is formed at the plasma boundary to the plasma grid to which the bias voltage is applied. The beam extraction should drive the negative ion transport in the ionic plasma across the sheath formed on the extraction surface. Larger reduction of the negative ions at the beam extraction is observed in a region above the extraction aperture on the plasma grid, which is confirmed with 2D image measurement of the Hα emission and cavity ring-down spectroscopy. The electron distribution is also measured near the plasma grid surface. These various properties observed in the ionic plasma are discussed.

  16. Comparison of dry-etch techniques for GaN, InN, and AlN

    SciTech Connect

    Shul, R.J.; Vawter, G.A.; Willison, C.G.; Bridges, M.M.; Lee, J.W.; Pearton, S.J.; Abernathy, C.R.

    1997-12-01

    FABRICATION OF GROUP III NITRIDE DEVICES RELIES ON THE ABILITY TO PATTERN FEATURES TO DEPTHS RANGING FROM 1000 A TO {gt} 5 MICRONS WITH ANISOTROPIC PROFILES, SMOOTH MORPHOLOGIES, SELECTIVE ETCHING OF ONE MATERIAL OVER ANOTHER, AND A LOW DEGREE OF PLASMA INDUCED DAMAGE. IN THIS STUDY, GAN ETCH RATES AND ETCH PROFILES ARE COMPARED USING REACTIVE ION ETCH (RIE), REACTIVE ION BEAM ETCHING (RIBE), ELECTRON CYCLOTRON RESONANCE (ECR), AND INDUCTIVELY COUPLED PLASMA (ICP) ETCH SYSTEMS. RIE YIELDED THE SLOWEST ETCH RATES AND SLOPED ETCH PROFILES DESPITE DC-BIASES {gt} -900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AlN etch characteristics are also compared using ICP and RIBE.

  17. Hydrogen recovery from the thermal plasma gasification of solid waste.

    PubMed

    Byun, Youngchul; Cho, Moohyun; Chung, Jae Woo; Namkung, Won; Lee, Hyeon Don; Jang, Sung Duk; Kim, Young-Suk; Lee, Jin-Ho; Lee, Carg-Ro; Hwang, Soon-Mo

    2011-06-15

    Thermal plasma gasification has been demonstrated as one of the most effective and environmentally friendly methods for solid waste treatment and energy utilization in many of studies. Therefore, the thermal plasma process of solid waste gasification (paper mill waste, 1.2 ton/day) was applied for the recovery of high purity H(2) (>99.99%). Gases emitted from a gasification furnace equipped with a nontransferred thermal plasma torch were purified using a bag-filter and wet scrubber. Thereafter, the gases, which contained syngas (CO+H(2)), were introduced into a H(2) recovery system, consisting largely of a water gas shift (WGS) unit for the conversion of CO to H(2) and a pressure swing adsorption (PSA) unit for the separation and purification of H(2). It was successfully demonstrated that the thermal plasma process of solid waste gasification, combined with the WGS and PSA, produced high purity H(2) (20 N m(3)/h (400 H(2)-Nm(3)/PMW-ton), up to 99.99%) using a plasma torch with 1.6 MWh/PMW-ton of electricity. The results presented here suggest that the thermal plasma process of solid waste gasification for the production of high purity H(2) may provide a new approach as a future energy infrastructure based on H(2).

  18. ICP etching of GaAs via hole contacts

    SciTech Connect

    Shul, R.J.; Baca, A.G.; Briggs, R.D.; McClellan, G.B.; Pearton, S.J.; Constantine, C.

    1996-09-01

    Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 {mu}m/min with via profiles ranging from highly anistropic to conical.

  19. Surface modification of optical materials with hydrogen plasma for fabrication of Bragg gratings.

    PubMed

    Salgaeva, Uliana O; Volyncev, Anatoliy B; Mendes, Sergio B

    2016-01-20

    We investigate the hydrogen plasma process as a route for creating Bragg gratings (BGs) on optoelectronic materials such as undoped lithium niobate (LiNbO(3)), proton-exchanged LiNbO(3), and soda-lime glass. Photopatterns (periodic modulations, Λ=323-2000  nm) were created on those substrates and the hydrogen plasma process was investigated for its ability to transfer the microstructures and the underlying mechanisms involved in this process. The diffraction efficiency and surface topology of the BG were characterized, as well as the optical properties of corresponding bulk materials undergoing the same plasma treatment. It is shown that the hydrogen plasma treatment changes the complex refractive index and modifies the surface topology with a volume expansion in the near-surface region, and both features are connected to the appearance of structural defects in the materials. The hydrogen plasma offers unique flexibility and advantages that can be explored for the fabrication of integrated photonic components.

  20. Effects of laser radiation field on energies of hydrogen atom in plasmas

    SciTech Connect

    Bahar, M. K.

    2015-09-15

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence of laser radiation field within the Ehlotzky approximation using the asymptotic iteration method. The MGECSC potential includes four different potential forms in consideration of different sets of the parameters in the potential. By applying laser field, the total interaction potential of hydrogen atom embedded in plasmas converts to double well-type potential. The plasma screening effects under the influence of laser field as well as confinement effects of laser field on hydrogen atom in Debye and quantum plasmas are investigated by solving the Schrödinger equation with the laser-dressed MGECSC potential. It is resulted that since applying a monochromatic laser field on hydrogen atom embedded in a Debye and quantum plasma causes to shift in the profile of the total interaction potential, the confinement effects of laser field on hydrogen atom in plasmas modeled by the MGECSC potential change localizations of energy states.