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Sample records for hydrogen plasma etching

  1. Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma

    NASA Astrophysics Data System (ADS)

    Ohmi, Hiromasa; Sato, Jumpei; Hirano, Tatsuya; Kubota, Yusuke; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

    2016-11-01

    Copper (Cu) dry etching is demonstrated using a narrow-gap hydrogen plasma generated at 13.3 kPa (100 Torr) for applications in the Cu wiring technology of integrated circuits. A localized hydrogen plasma is generated around the apex of a fine pipe electrode. The Cu etching can be observed only when the process gas contains hydrogen, and the etching rates decrease with decreased hydrogen concentration. The plasma heating effect owing to plasma localization is negligible for the Cu etching because no etching occurs in the presence of pure N2 plasma whose volume is almost equal to that of the pure H2 plasma. Furthermore, the influences of physical sputtering and vacuum ultraviolet irradiation on the Cu etching are confirmed to be insignificant by exposing the samples to rare-gas plasma. The maximum Cu etching rate of 500 nm/min can be achieved at a stage temperature of 0 °C. However, the Cu etching rate has no obvious dependence on the stage temperature in a range from -20 to 330 °C. In contrast, the etching rates for Si and SiO2 at a stage temperature of 0 °C are 100 μm/min and 50 nm/min, respectively. The Cu etching rate is 10 times higher than that of SiO2, which implies that this etching technique has potential applications for Cu wiring on an SiO2 layer. The Cu surface etched by the hydrogen plasma is roughened and exhibits many round pits and bumps, which seems to be owing to excessive incorporation of the diffused hydrogen in the Cu bulk.

  2. Stability and etching of titanium oxynitride films in hydrogen microwave plasma

    SciTech Connect

    Do Hien; Yen, Tzu-Chun; Chang Li

    2013-07-15

    Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented.

  3. Etching and Polymerization in Fluorocarbon-Hydrogen Plasmas: Mathematical Modeling and Experimental Investigation.

    NASA Astrophysics Data System (ADS)

    Butler, Stephanie Watts

    The goal of this research was to develop an understanding of the important reactions and species involved in polymerization and selective oxide/silicon etching with and without ion bombardment in fluorocarbon/hydrogen plasmas. Through the creation and use of a computer model, the impact of flow rate, power, CF_4/H _2 feed composition, and pressure was studied. Comparisons of model predictions of gas phase species with experimentally measured concentrations and deposition/etching rates validated the model and demonstrated the influence of gas phase species and ions upon surface reactions. The assumption of complete mixing (Continuously Stirred Tank Reactor) was proven to be appropriate; it allowed the model to include gaseous expansion and run quickly. Although previous investigators postulated CF _2 to be the predominant polymer precursor, model predictions showed that CF was also important and inclusion of CF was necessary to replicate experimental results. Without ion bombardment, hydrogen appeared to significantly lower the polymerization rate by abstracting fluorine from the film or terminating chain growth. Fluorine enhanced polymerization under some conditions, which could be due to increased generation of active sites by abstraction of hydrogen from the polymer. With energetic bombardment, fluorine reduced polymerization due to etching of polymer or shortening the lifetime of adsorbed CF_{rm x}^ecies. A new parameter, E_{rm s}, was defined and shown to indicate the ion flux to the surface. The differences in polymerization for a given CF_{rm x}/F ratio could be explained by differences in ion flux. For cases of significant polymer deposition, the polymerization rate gave the illusion of ion energy independence. This research attempted to prove that polymer inhibits etching by chemically adsorbing on silicon, not by limiting diffusion of fluorine, allowing the etch rate to be represented with Langmuir-Hinshelwood kinetics. Oxide etching was not significantly

  4. Simulation of Plasma Etching

    NASA Astrophysics Data System (ADS)

    Moroz, Paul; Moroz, Daniel

    2016-09-01

    Plasma is an indispensable tool in materials processing. It provides chemically and physically active species and directional flows of energetic species enabling deep etching with good straight profiles required by the industry. At present time, the only feasible methods of simulating the resulting feature profiles are those which fall within the scope of feature-scale (FS) simulation methods, utilizing engineering-type of reactions of incoming species with solid materials. At the same time, the molecule dynamics (MD) methods are emerging as an important alternative approach to simulating extremely small features with sizes below of a few nanometers. In our presentation, we discuss both FS methods implemented into the FPS3D code and MD methods implemented into the MDSS code. We also discuss the ways of extracting information about the reactions and interactions used in FS codes from the MD simulations utilizing the approach of interatomic potentials. For this presentation, we selected two types of simulation cases for etching. The first type considers simulation of mostly etching and implantation, such as during Si etching by chlorine-argon plasma. The second type considers ALE (atomic layer etch) when etching is done by a cyclic process of surface passivation/activation with the following process of etching/removal of a single atomic layer per cycle or per a few cycles, allowing ultimate processing accuracy. The simulations are carried out with both FS and MD codes to provide the data for relation and comparison between those two very different approaches.

  5. Plasma etching of cesium iodide

    NASA Astrophysics Data System (ADS)

    Yang, X.; Hopwood, J.; Tipnis, S.; Nagarkar, V.; Gaysinskiy, V.

    2002-01-01

    Thick films of cesium iodide (CsI) are often used to convert x-ray images into visible light. Spreading of the visible light within CsI, however, reduces the resolution of the resulting image. Anisotropic etching of the CsI film into an array of micropixels can improve the image resolution by confining light within each pixel. The etching process uses a high-density inductively coupled plasma to pattern CsI samples held by a heated, rf-biased chuck. Fluorine-containing gases such as CF4 are found to enhance the etch rate by an order of magnitude compared to Ar+ sputtering alone. Without inert-gas ion bombardment, however, the CF4 etch becomes self-limited within a few microns of depth due to the blanket deposition of a passivation layer. Using CF4+Ar continuously removes this layer from the lateral surfaces, but the formation of a thick passivation layer on the unbombarded sidewalls of etched features is observed by scanning electron microscopy. At a substrate temperature of 220 °C, the minimum ion-bombardment energy for etching is Ei~50 eV, and the rate depends on Ei1/2 above 65 eV. In dilute mixtures of CF4 and Ar, the etch rate is proportional to the gas-phase density of atomic fluorine. Above 50% CF4, however, the rate decreases, indicating the onset of net surface polymer deposition. These observations suggest that anisotropy is obtained through the ion-enhanced inhibitor etching mechanism. Etching exhibits an Arrhenius-type behavior in which the etch rate increases from ~40 nm/min at 40 °C to 380 nm/min at 330 °C. The temperature dependence corresponds to an activation energy of 0.13+/-0.01 eV. This activation energy is consistent with the electronic sputtering mechanism for alkali halides.

  6. In-Plasma Photo-Assisted Etching

    NASA Astrophysics Data System (ADS)

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths <1700 Å. Among the plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  7. Advanced plasma etch technologies for nanopatterning

    NASA Astrophysics Data System (ADS)

    Wise, Rich

    2012-03-01

    Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

  8. Advanced plasma etch technologies for nanopatterning

    NASA Astrophysics Data System (ADS)

    Wise, Rich

    2013-10-01

    Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

  9. Plasma/Neutral-Beam Etching Apparatus

    NASA Technical Reports Server (NTRS)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  10. Pulsed plasma etching for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Economou, Demetre J.

    2014-07-01

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions.

  11. Plasma etching: Yesterday, today, and tomorrow

    SciTech Connect

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  12. High density plasma etching of magnetic devices

    NASA Astrophysics Data System (ADS)

    Jung, Kee Bum

    Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3

  13. Thermal compression chip interconnection using organic solderability preservative etched substrate by plasma processing.

    PubMed

    Cho, Sung-Won; Choi, JoonYoung; Chung, Chin-Wook

    2014-12-01

    The solderability of copper organic solderbility preservative (CuOSP) finished substrate was enhanced by the plasma etching. To improve the solderability of TC interconnection with the CuOSP finished substrate, the plasma etching process is used. An Oxygen-Hydrogen plasma treatment process is performed to remove OSP material. To prevent the oxidation by oxygen plasma treatment, hydrogen reducing process is also performed before TC interconnection process. The thickness of OSP material after plasma etching is measured by optical reflection method and the component analysis by Auger Electron Spectroscopy is performed. From the lowered thickness, the bonding force of TC interconnection after OSP etching process is lowered. Also the electrical open/short test was performed after assembling the completed semiconductor packaging. The improved yield due to the plasma etching process is achieved.

  14. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF{sup +}, CF{sub 2}{sup +}, CHF{sub 2}{sup +}, and CH{sub 2}F{sup +} ions

    SciTech Connect

    Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga; Tatsumi, Tetsuya; Hamaguchi, Satoshi

    2011-09-15

    Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si{sub 3}N{sub 4}) reactive ion etching. This study focuses on the elementary reactions of energetic CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions with Si{sub 3}N{sub 4} surfaces. In the experiments, Si{sub 3}N{sub 4} surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF{sub 2}{sup +} and CH{sub 2}F{sup +} ions as well as hydrogen-free CF{sub 2}{sup +} and CF{sup +} ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si{sub 3}N{sub 4} by hydrofluorocarbon ions, i.e., CHF{sub 2}{sup +} and CH{sub 2}F{sup +}, are higher than those by the corresponding fluorocarbon ions, i.e., CF{sub 2}{sup +} and CF{sup +}, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content.

  15. Plasma etching a ceramic composite. [evaluating microstructure

    NASA Technical Reports Server (NTRS)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  16. Plasma etching for advanced polymer optical devices

    NASA Astrophysics Data System (ADS)

    Bitting, Donald S.

    Plasma etching is a common microfabrication technique which can be applied to polymers as well as glasses, metals, and semiconductors. The fabrication of low loss and reliable polymer optical devices commonly makes use of advanced microfabrication processing techniques similar in nature to those utilized in standard semiconductor fabrication technology. Among these techniques, plasma/reactive ion etching is commonly used in the formation of waveguiding core structures. Plasma etching is a powerful processing technique with many potential applications in the emerging field of polymer optical device fabrication. One such promising application explored in this study is in the area of thin film-substrate adhesion enhancement. Two approaches involving plasma processing were evaluated to improve substrate-thin film adhesion in the production of polymer waveguide optical devices. Plasma treatment of polymer substrates such as polycarbonate has been studied to promote the adhesion of fluoropolymer thin film coatings for waveguide device fabrication. The effects of blanket oxygen plasma etchback on substrate, microstructural substrate feature formation, and the long term performance and reliability of these methods were investigated. Use of a blanket oxygen plasma to alter the polycarbonate surface prior to fluoropolymer casting was found to have positive but limited capability to improve the adhesive strength between these polymers. Experiments show a strong correlation between surface roughness and adhesion strength. The formation of small scale surface features using microlithography and plasma etching on the polycarbonate surface proved to provide outstanding adhesion strength when compared to any other known treatment methods. Long term environmental performance testing of these surface treatment methods provided validating data. Test results showed these process approaches to be effective solutions to the problem of adhesion between hydrocarbon based polymer

  17. Fe-catalyzed etching of exfoliated graphite through carbon hydrogenation

    PubMed Central

    Cheng, Guangjun; Calizo, Irene; Hacker, Christina A.; Richter, Curt A.; Hight Walker, Angela R.

    2016-01-01

    We present an investigation on Fe-catalyzed etching of graphite by dewetting Fe thin films on graphite in forming gas. Raman mapping of the etched graphite shows thickness variation in the etched channels and reveals that the edges are predominately terminated in zigzag configuration. X-ray diffraction and photoelectron spectroscopy measurements identify that the catalytic particles are Fe with the presence of iron carbide and iron oxides. The existence of iron carbide indicates that, in additional to carbon hydrogenation, carbon dissolution into Fe is also involved during etching. Furthermore, the catalytic particles can be re-activated upon a second annealing in forming gas. PMID:27840449

  18. Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

    SciTech Connect

    Vu, K. T.; Madden, S. J.

    2011-01-15

    The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

  19. Spent nuclear fuel recycling with plasma reduction and etching

    DOEpatents

    Kim, Yong Ho

    2012-06-05

    A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF6 and PuF4. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF6 (gas) that is formed to decompose back to PuF4 (solid), and b) to maintain stability of the UF6. Uranium (in the form of gaseous UF6) is easily extracted and separated from the plutonium (in the form of solid PuF4). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF6 (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF4 or NF3 as the fluorine sources instead of F2 or HF.

  20. Etch Characteristics of GaN using Inductively Coupled Cl2 Plasma Etching

    NASA Astrophysics Data System (ADS)

    Rosli, Siti Azlina; Aziz, A. Abdul

    2008-05-01

    In this study, the plasma characteristics and GaN etch properties of inductively coupled Cl2/Ar plasmas were investigated. It has shown that the results of a study of inductively coupled plasma (ICP) etching of gallium nitride by using Cl2/Ar is possible to meet the requirement (anisotropy, high etch rate and high selectivity), simultaneously. We have investigated the etching rate dependency on the percentage of Argon in the gas mixture, the total pressure and DC voltage. We found that using a gas mixture with 20 sccm of Ar, the optimum etch rate of GaN was achieved. The etch rate were found to increase with voltage, attaining a maximum rate 2500 Å/min at -557 V. The addition of an inert gas, Ar is found to barely affect the etch rate. Surface morphology of the etched samples was verified by scanning electron microscopy and atomic force microscopy. It was found that the etched surface was anisotropic and the smoothness of the etched surface is comparable to that of polished wafer.

  1. Experiment and Results on Plasma Etching of SRF cavities

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Peshl, J.; Vuskovic, Leposova; Popovic, Svetozar; Valente, Anne-Marie; Phillips, H. Lawrence

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  2. Modeling of plasma etch profiles with ions and reactive neutrals

    NASA Astrophysics Data System (ADS)

    Wang, Chungdar Daniel

    1999-11-01

    The simulation of plasma etch profiles of semiconductor trenches in the wafer processing of integrated circuits is developed in a mixed analytic/numerical approach. The main contributions of this study are the derivation and use of explicit analytical expressions for the etch rates and the computation of the etch profiles by standard computer packages. The computation of the etch profiles is efficient, is used as a benchmark for more complex numerical computer codes and illuminates the parameter dependence. The etch rate due to the ions is assumed proportional to the ion energy flux as suggested by experimental evidence. The shadowing due to the mask is included in the simplified derivation of the ion energy flux in cylindrical velocity coordinates for a two-temperature ion drifting Maxwellian. Neutrals with varying sticking coefficients are modeled by interpolation between the etch rate for shadowed neutrals with unity sticking coefficients and isotropic neutrals. The etch profiles are determined by the method of characteristics from the nonlinear evolution equation for the etch profile surface. Standard Matlab packages for the graphics and integration of the ordinary differential equations for the characteristics make the computation of etch profiles more efficient and more transparent than many complicated computer codes. The SEM images for trenches etched in silicon in a SF6 plasma in a RIE reactor are modeled by the simulation method for etch profiles. The etch rate is a linear combination of the etch rates of ions and neutrals in the ion flux-limited regime. Monte Carlo simulation of ion distribution functions in a chlorine plasma are fit by a simulated annealing procedure to a set of two-temperature drifting Maxwellians. The Monte Carlo simulations are noisy due to insufficient numbers of simulation particles. Smoothing of the distribution functions produces the expected bimodal ion distribution functions in the ICP reactor. The resultant etch profiles for

  3. The Effects of Using a Commercial Grade Plasma Etching Chamber to Etch Anodized Niobium Surfaces

    NASA Astrophysics Data System (ADS)

    Epperson, Christiana; Drake, Dereth; Winska, Kalina

    2015-11-01

    Anodized niobium surfaces are used in particle accelerators for construction of the superconducting cavities. These surfaces must be cleaned regularly to remove containments and maintain the surface smoothness. The most common method used is that of chemically etching the surface using acid baths; however, this process can affect the smoothness of the layer and is extremely time consuming and hazardous. Plasma etching is one alternative that has shown great promise. We are using a commercial grade plasma etching chamber to clean anodized niobium samples that have varying oxide layer thicknesses. Spectral profiles of the surfaces of the samples are taken before and after etching. All measured results are compared to a simple theoretical model in order to determine the effects of the etching process on each surface.

  4. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-01

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √{Ei } curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  5. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    SciTech Connect

    Nakazaki, Nobuya Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i} < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher E{sub i}, where the rms surface roughness decreases substantially with E{sub i} down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on E{sub i} were also observed in the etch rate versus √(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  6. Etching of silicon surfaces using atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Paetzelt, H.; Böhm, G.; Arnold, Th

    2015-04-01

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min-1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets.

  7. Characterization of Thermal and Photo-Enhanced Remote Plasma Etching of Gallium Arsenide and Indium Phosphide

    NASA Astrophysics Data System (ADS)

    Lishan, David George

    The desire to shrink dimensions and improve performance of devices has focused attention on fabrication processes that induce a minimum of material damage. A technique which accomplishes this goal involves the utilization of remote plasma etching. In this work, the design of a flexible, high vacuum, remote plasma dry etch processing chamber with multiple in situ analytical capabilities is described. With this new chamber, a systematic study of temperature and flux dependence using hydrogen chloride (HCl) and chlorine (Cl_2) to etch GaAs and InP is performed. Reactant flux limited etching was observed using HCl. These results agree qualitatively with thermodynamic predictions and provide a more complete understanding of reactant flux and product desorption dynamics. Along with the insight into the mechanisms associated with halogen etching of III-V materials, the control, low damage, and material selectivity aspects of remote plasma etching are discussed using as examples, photochemical enhanced etching, fabrication of quantum wires, and in situ real time current monitoring.

  8. Automated process control for plasma etching

    NASA Astrophysics Data System (ADS)

    McGeown, Margaret; Arshak, Khalil I.; Murphy, Eamonn

    1992-06-01

    This paper discusses the development and implementation of a rule-based system which assists in providing automated process control for plasma etching. The heart of the system is to establish a correspondence between a particular data pattern -- sensor or data signals -- and one or more modes of failure, i.e., a data-driven monitoring approach. The objective of this rule based system, PLETCHSY, is to create a program combining statistical process control (SPC) and fault diagnosis to help control a manufacturing process which varies over time. This can be achieved by building a process control system (PCS) with the following characteristics. A facility to monitor the performance of the process by obtaining and analyzing the data relating to the appropriate process variables. Process sensor/status signals are input into an SPC module. If trends are present, the SPC module outputs the last seven control points, a pattern which is represented by either regression or scoring. The pattern is passed to the rule-based module. When the rule-based system recognizes a pattern, it starts the diagnostic process using the pattern. If the process is considered to be going out of control, advice is provided about actions which should be taken to bring the process back into control.

  9. Diagnostics of Pulsed Hydrogen Plasmas

    NASA Astrophysics Data System (ADS)

    Dubois, Jerome; Cunge, Gilles; Joubert, Olivier; Darnon, Maxime; Vallier, Laurent; Posseme, Nicolas; Etching Group Team

    2014-10-01

    Hydrogen plasmas present a great potential interest for new materials such as graphene or C-nanotubes. To modify or clean such ultrathin layers without damaging the material, low ion energy bombardment is required (conditions such as those obtained in pulsed ICP reactor). By contrast, for other applications the ion energy must be high, to get a significant etch rate for example. To assist the development of innovative processes in H2 plasmas, we have thus analyzed systematically CW and pulsed H2 plasmas both with and without RF bias power. In particular, we carry out time-resolved ion flux, and time-averaged ion energy measurements in different pulsing configurations. A large variety of ion energies and shapes of IVDF are reported depending on pulsing parameters. The IVDF are typically very broad (due to the low ion transit time of low mass ion through the sheath) and either bi or tri-modal (H +, H2 + and H3 + contributions). The time variations of the ion flux in pulsed plasmas also presents peculiar features that will be discussed. Finally, we show that a specific issue is associated to H2 plasmas: they reduce the chamber walls material therefore releasing impurities (O atoms...) in the plasma with important consequences on processes.

  10. Plasma & reactive ion etching to prepare ohmic contacts

    DOEpatents

    Gessert, Timothy A.

    2002-01-01

    A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

  11. Investigation on etch characteristics of nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma.

    PubMed

    Kim, Eun Ho; Xiao, Yu Bin; Kong, Seon Mi; Chung, Chee Won

    2011-07-01

    The etch characteristics of CoFeB magnetic films and magnetic-tunnel-junction (MTJ) stacks masked with Ti films were investigated using an inductively coupled plasma reactive ion etching in a HBr/Ar gas mix. The etch rate, etch selectivity, and etch profile of the CoFeB films were obtained as a function of the HBr concentration. As the HBr gas was added to Ar, the etch rate of the CoFeB films, and the etch selectivity to the Ti hard mask, gradually decreased, but the etch profile of the CoFeB films was improved. The effects of the HBr concentration and etch parameters on the etch profile of the MTJ stacks with a nanometer-sized 70 x 100 nm2 pattern were explored. At 10% HBr concentration, low ICP RF power, and low DC-bias voltage, better etch profiles of the MTJ stacks were obtained without redeposition. It was confirmed that the protective layer containing hydrogen, and the surface bombardment of the Ar ions, played a key role in obtaining a steep sidewall angle in the etch profile. Fine-pattern transfer of the MTJ stacks with a high degree of anisotropy was achieved using a HBr/Ar gas chemistry.

  12. Selective Plasma Etching of Polymeric Substrates for Advanced Applications.

    PubMed

    Puliyalil, Harinarayanan; Cvelbar, Uroš

    2016-06-07

    In today's nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a "zoo" of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  13. Selective Plasma Etching of Polymeric Substrates for Advanced Applications

    PubMed Central

    Puliyalil, Harinarayanan; Cvelbar, Uroš

    2016-01-01

    In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance. PMID:28335238

  14. The grand challenges of plasma etching: a manufacturing perspective

    NASA Astrophysics Data System (ADS)

    Lee, Chris G. N.; Kanarik, Keren J.; Gottscho, Richard A.

    2014-07-01

    Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the mid 80s to ˜0.01 µm today. The manufacturing of these devices requires overcoming a series of challenges, ranging from continuous innovation on device integration to extend Moore's law to breaking tradeoffs on the perennial challenge of aspect ratio-dependent etching. In this paper, we will review four key areas in etch manufacturing: uniformity, defects, surface precision and ‘sticky’/non-volatile etch materials. In the uniformity section, we will discuss the challenges for microscopic uniformity, such as localized feature dimension variations; macroscopic uniformity, such as performance at the extreme edge of the wafer; and repeatable uniformity, meaning wafer-to-wafer, lot-to-lot and chamber-to-chamber performance. While defect management is successful with in situ plasma cleans, one must be cognizant of the choice of clean chemistry. In surface precision, we look at the approach of atomic layer etching and how it can be successful in a manufacturing environment. Finally, in the non-volatile material section, we review technology drivers for DRAM (dynamic random access memory) and NAND flash memory in the microelectronics Si industry, with focus on the utilization of such materials and what it means to etch equipment manufacturers.

  15. Modeling aluminum etch chemistry in high density plasmas

    SciTech Connect

    Meeks, E.; Ho, P.; Buss, R.

    1997-08-01

    The authors have assembled a chemical reaction mechanism that describes the BCl{sub 3}/Cl{sub 2}/Ar plasma etch of Al metallization layers. The reaction set for gas-phase and surface processes was derived either from literature data or estimated from data on related systems. A well-mixed reactor model was used to develop the mechanism and test it against experimental measurements of plasma species and etch-rates in processing reactors. Finally, use of reduced chemistry mechanisms are demonstrated in 2-D simulations for a complex reactor geometry.

  16. Anisotropic Ta{sub 2}O{sub 5} waveguide etching using inductively coupled plasma etching

    SciTech Connect

    Muttalib, Muhammad Firdaus A. Chen, Ruiqi Y.; Pearce, Stuart J.; Charlton, Martin D. B.

    2014-07-01

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta{sub 2}O{sub 5}) waveguides. A mixture of C{sub 4}F{sub 8} and O{sub 2} gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut.

  17. Method of plasma etching Ga-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  18. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  19. Electron Beam Biasing of Substrates during Plasma Etching [1

    NASA Astrophysics Data System (ADS)

    Quick, A. K.; Hershkowitz, N.

    1997-10-01

    Electron beam biasing of substrates is being studied as an alternative to the usual method of using a capacitively coupled, rf-powered wafer chuck. The advantage of biasing with an electron beam is that the electrons which arrive at the wafer do so with an anisotropic velocity distribution similar to the plasma sheath-accelerated ions. This becomes important when etching large aspect ratio features. Isotropic plasma electrons can't follow the ions to the bottom of deep wells and they adhere to and charge up the feature sidewalls. This differential charging creates electric fields which deflect incoming ions and causes sidewall profile defects such as bowing, notching, and microtrenching and contributes to RIE(Reactive Ion Etch) lag( R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, J. Vac. Sci. Technol. B 10, Sep/Oct 1992, 2133.). The effects of etching sub-half micron nested poly-Silicon lines in Cl2 plasmas in the presence of an electron beam will be presented particularly in regard to notch suppression. The effects that the electron beam has on RIE lag suppression in SiO2 etching in fluorocarbon plasmas will also be discussed.

  20. Etching of carbon nanowalls during synthesis in the plasma of direct current discharge

    NASA Astrophysics Data System (ADS)

    Mironovich, K. V.; Mankelevich, Yu. A.; Krivchenko, V. A.

    2015-02-01

    Anisotropic etching of carbon nanowalls by hydrogen during synthesis in plasma discharge of direct current is considered. This effect brings about generation of defects in the bottom part of the side surface of the nanowalls during their vertical growth. Based on the theoretical model of the discharge, it is shown that a decrease in the intensity of such etching is accompanied by an increase in the concentrations of such hydrocarbon radicals as C, CH, CH2, C2H, C3, and C3H, which indicates their possible role in the so-called process of healing of vacancies in the structure of nanowalls. In addition, it has been shown that an increase in synthesis temperature also can contribute to a decrease in the etching intensity.

  1. Fabrication of polymer nanowires via maskless O2 plasma etching.

    PubMed

    Du, Ke; Wathuthanthri, Ishan; Liu, Yuyang; Kang, Yong Tae; Choi, Chang-Hwan

    2014-04-25

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems.

  2. Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

    SciTech Connect

    King, Sean W. Davis, Robert F.; Carter, Richard J.; Schneider, Thomas P.; Nemanich, Robert J.

    2015-09-15

    The desorption kinetics of molecular hydrogen (H{sub 2}) from silicon (001) surfaces exposed to aqueous hydrogen fluoride and remote hydrogen plasmas were examined using temperature programmed desorption. Multiple H{sub 2} desorption states were observed and attributed to surface monohydride (SiH), di/trihydride (SiH{sub 2/3}), and hydroxide (SiOH) species, subsurface hydrogen trapped at defects, and hydrogen evolved during the desorption of surface oxides. The observed surface hydride species were dependent on the surface temperature during hydrogen plasma exposure with mono, di, and trihydride species being observed after low temperature exposure (150 °C), while predominantly monohydride species were observed after higher temperature exposure (450 °C). The ratio of surface versus subsurface H{sub 2} desorption was also found to be dependent on the substrate temperature with 150 °C remote hydrogen plasma exposure generally leading to more H{sub 2} evolved from subsurface states and 450 °C exposure leading to more H{sub 2} desorption from surface SiH{sub x} species. Additional surface desorption states were observed, which were attributed to H{sub 2} desorption from Si (111) facets formed as a result of surface etching by the remote hydrogen plasma or aqueous hydrogen fluoride treatment. The kinetics of surface H{sub 2} desorption were found to be in excellent agreement with prior investigations of silicon surfaces exposed to thermally generated atomic hydrogen.

  3. Plasma-etching science meets technology in the MDL

    SciTech Connect

    Greenberg, K.E.; Miller, P.A.; Patteson, R.; Smith, B.K.

    1993-03-01

    Results from fundamental investigations of low-temperature plasma systems were used to improve chamber-to-chamber reproducibility and reliability in commercial plasma-etching equipment. The fundamental studies were performed with a GEC RF Reference Cell, a laboratory research system designed to facilitate experimental and theoretical studies of plasma systems. Results and diagnostics from the Reference Cell studies were then applied to analysis and rectification of chamber-to-chamber variability on a commercial, multichamber, plasma reactor. Pertinent results were transferred to industry.

  4. Characterization of Plasma Generated in a Commercial Grade Plasma Etching system

    NASA Astrophysics Data System (ADS)

    Bessinger, Gabriella; Drake, Dereth; Popovic, Svetozar; Vuskovic, Leposava

    2014-10-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academicians use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  5. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    NASA Astrophysics Data System (ADS)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  6. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    SciTech Connect

    Roychowdhury, A.; Dana, R.; Dreyer, M.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.

    2014-07-07

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.

  7. Ion orbits in plasma etching of semiconductors

    SciTech Connect

    Madziwa-Nussinov, Tsitsi G.; Arnush, Donald; Chen, Francis F.

    2008-01-15

    Fabrication of high-speed semiconductor circuits depends on etching submicron trenches and holes with straight walls, guided by sheath accelerated ions, which strike the substrate at a normal angle. Electrons accumulate at the nonconductive entrance of each trench, charging it negatively and preventing the penetration of electrons to the bottom of the trench. This 'electron shading' effect causes an ion charge at the bottom, which is well known to cause damage to thin oxide layers. In addition, the deflection of ions by electric fields in the trench can cause deformation of the trench shape. To study this effect, the ion orbits are computed self-consistently with their charging of the trench walls. It is found that (a) the orbits depend only on the electric fields at the entrance and are sensitive to changes in the shape of the photoresist layer there; (b) there is an 'ion shading' effect that protects part of the wall; and (c) the number of ions striking the wall is too small to cause any deformation thereof.

  8. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    PubMed

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  9. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    NASA Astrophysics Data System (ADS)

    Ji, Jing; Tay, Francis E. H.; Miao, Jianmin; Sun, Jianbo

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  10. Chemical gases sensing properties of diamond nanocone arrays formed by plasma etching

    NASA Astrophysics Data System (ADS)

    Wang, Q.; Qu, S. L.; Fu, S. Y.; Liu, W. J.; Li, J. J.; Gu, C. Z.

    2007-11-01

    A uniform diamond nanocone array was formed by plasma etching of diamond film in a hot filament chemical vapor deposition (HFCVD) system. A surface amorphous carbon coating layer, which is formed during CH4/H2 plasma-etching process, was removed by Ar plasma in a reactive ion etching system. The hydrogenation of diamond nanocones was performed in H2 ambience by using the same HFCVD system. The air-diluted NH3 and NO2 gases sensing properties of the diamond cone arrays had been studied by using electric current versus measurement time characteristics at room temperature. The repeatable chemical sensing properties of the hydrogenated diamond cone array sensor are enhanced, in comparison with as-formed diamond film. Surface two-dimensional hole gas structure and greatly increased surface-to-volume ratio both play a key role for the excellent detection performance. As-formed diamond nanocone arrays show a promising prospect for applications as chemical sensor for both reducing (NH3) and oxidizing (NO2) gases.

  11. Chemical gases sensing properties of diamond nanocone arrays formed by plasma etching

    SciTech Connect

    Wang, Q.; Qu, S. L.; Fu, S. Y.; Liu, W. J.; Li, J. J.; Gu, C. Z.

    2007-11-15

    A uniform diamond nanocone array was formed by plasma etching of diamond film in a hot filament chemical vapor deposition (HFCVD) system. A surface amorphous carbon coating layer, which is formed during CH{sub 4}/H{sub 2} plasma-etching process, was removed by Ar plasma in a reactive ion etching system. The hydrogenation of diamond nanocones was performed in H{sub 2} ambience by using the same HFCVD system. The air-diluted NH{sub 3} and NO{sub 2} gases sensing properties of the diamond cone arrays had been studied by using electric current versus measurement time characteristics at room temperature. The repeatable chemical sensing properties of the hydrogenated diamond cone array sensor are enhanced, in comparison with as-formed diamond film. Surface two-dimensional hole gas structure and greatly increased surface-to-volume ratio both play a key role for the excellent detection performance. As-formed diamond nanocone arrays show a promising prospect for applications as chemical sensor for both reducing (NH{sub 3}) and oxidizing (NO{sub 2}) gases.

  12. Plasma-etched nanostructures for optical applications (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  13. Characterization of Plasma Etch Processes for Wide Bandgap Semiconductors

    DTIC Science & Technology

    2005-09-07

    PERFORMING ORGANIZATION UNIVERSITY OF KANSAS REPORT NUMBER CENTER FOR RESEARCH INC 2385 IRVING HILL ROAD LAWRENCE KS 66045-7563 9. SPONSORING/MONITORING... Langmuir probe results, which show that the electron temperature does indeed increase with the addition of helium to SF6. The design of the Langmuir probe...complexities of the etch mechanisms. The plasma diagnostic tools we will be using include mass spectrometry, optical emission spectroscopy, and Langmuir

  14. Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching

    NASA Astrophysics Data System (ADS)

    Xu, S.; Levchenko, I.; Huang, S. Y.; Ostrikov, K.

    2009-09-01

    The formation of vertically aligned single-crystalline silicon nanostructures via "self-organized" maskless etching in Ar+H2 plasmas is studied. The shape and aspect ratio can be effectively controlled by the reactive plasma composition. In the optimum parameter space, single-crystalline pyramid-like nanostructures are produced; otherwise, nanocones and nanodots are formed. This generic nanostructure formation approach does not involve any external material deposition. It is based on a concurrent sputtering, etching, hydrogen termination, and atom/radical redeposition and can be applied to other nanomaterials.

  15. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    PubMed

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG.

  16. Research of surface plasma resonance optical fiber hydrogen sensor

    NASA Astrophysics Data System (ADS)

    Ou, Zhonghua; Guo, Xiaowei; Chen, Dejun; Dai, Zhiyong; Peng, Zengshou; Liu, Yongzhi

    2008-12-01

    An optical fiber hydrogen sensor based on the measuring principle of surface plasma resonance is introduced. The structure of the hydrogen-sensitive head which is coated with Pd-Ag alloy film on the surface of the etched optical fiber is investigated theoretically. When hydrogen gas is absorbed into the Pd thin layer of the sensing head, the Pd hydride is formed and then the refraction index of the etched optical fiber surface will be changed with different hydrogen gas concentration. The surface plasma wave is stimulated by the light wave in optical fiber and the surface plasma resonance occurs between the thin metal layer and the medium surface of hydrogen gas. The Pd-Ag alloy film thickness versus the sensitivity of hydrogen sensing head is analyzed and optimized via the numerical method. The sensing head which is based on surface plasma resonance is manufactured and used in the experiment system of hydrogen gas detecting, and the experiment results demonstrate that the detecting system has high sensitivity with the hydrogen concentration in the range of 0%-4%, the accuracy, resolution and response time are respectively 5%, 0.1% and 30s. This sensor structure can be applied to detecting the low concentration of hydrogen gas.

  17. Isotropic plasma etching of Ge Si and SiNx films

    SciTech Connect

    Henry, Michael David; Douglas, Erica Ann

    2016-08-31

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  18. Isotropic plasma etching of Ge Si and SiNx films

    DOE PAGES

    Henry, Michael David; Douglas, Erica Ann

    2016-08-31

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  19. Structure dependent hydrogen induced etching features of graphene crystals

    NASA Astrophysics Data System (ADS)

    Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Papon, Remi; Sharma, Subash; Vishwakarma, Riteshkumar; Sharma, Kamal P.; Tanemura, Masaki

    2015-06-01

    H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.

  20. Understanding anisotropic plasma etching of two-dimensional polystyrene opals for advanced materials fabrication.

    PubMed

    Akinoglu, Eser M; Morfa, Anthony J; Giersig, Michael

    2014-10-21

    Anisotropic deformation of polystyrene particles in an oxygenated (O2/Ar) plasma is observed for radio frequency (rf) plasma and inductively coupled plasma (ICP). A facile model based on a ratio of completely isotropic and completely anisotropic etching is presented to describe the anisotropy of the etching process and is implemented to determine the height of the spheroid-shaped polystyrene particles. In our systems, we find the plasma etching to be 54% isotropic in the rf plasma and 79% isotropic in the ICP. With this model, the maximum material deposition thickness for nanofabrication with plasma-etched nanosphere lithography or colloid lithography can be predicted. Moreover, the etching of polystyrene particles in an oxygenated plasma is investigated versus the etching time, gas flow, gas composition, temperature, substrate material, and particle size. The results of this study allow precise shape tuning during the fabrication of nanostructured surfaces with size-dependent properties for bionic, medical, and photonic applications.

  1. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  2. Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

    SciTech Connect

    Vogli, Evelina; Metzler, Dominik; Oehrlein, Gottlieb S.

    2013-06-24

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  3. Comparison of advanced plasma sources for etching applications. V. Polysilicon etching rate, uniformity, profile control, and bulk plasma properties in a helical resonator plasma source

    SciTech Connect

    Lee, J.T.; Layadi, N.; Guinn, K.V.; Maynard, H.L.; Klemens, F.P.; Ibbotson, D.E.; Tepermeister, I.; Egan, P.O.; Richardson, R.A.

    1996-07-01

    Etching of polysilicon features using a helical resonator plasma source is evaluated. Performance metrics consist of etching rate, etching rate uniformity, and profile control using HBr/O{sub 2}{endash}He gas-phase chemistry. The effect of source power, rf-bias power, and reactor pressure on etching rate and uniformity is examined using a response surface experiment. Feature profile control is determined by examining nested and isolated lines and trenches using oxide mask/polysilicon/oxide structures. Good uniformity and vertical profiles are obtained at low reactor pressures, high source power, and rf-bias between 50 and 60 W. The operating point for best uniformity is at 3.5 mTorr, 3000 W source power, and 53 W rf-bias power. At this point, the etching rate is 3700 A/min and the nonuniformity is less than 1.0{percent}, over 125-mm-diam wafers. Radial profiles of electron temperature and ion density near the wafer surface are presented as a function of source power, rf-bias power, and reactor pressure. The ion density was found to be in the mid-10{sup 11} cm{sup {minus}3} range and electron temperatures were 5{endash}7 eV. An increase in source power and reactor pressure results in an increase in ion density; however, the electron temperature shows a weaker dependence. Finally, these results are compared to those using helicon and multipole electron cyclotron resonance plasma sources evaluated in previous studies. We found that all three plasma sources provide high ion density at low pressures to meet performance demands for polysilicon etching; however, the helical resonator source offers somewhat higher etching rate and better bulk plasma uniformity. {copyright} {ital 1996 American Vacuum Society}

  4. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

    NASA Astrophysics Data System (ADS)

    Zhu, Weiye; Sridhar, Shyam; Liu, Lei; Hernandez, Eduardo; Donnelly, Vincent M.; Economou, Demetre J.

    2014-05-01

    Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%-50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br2/Ar and HBr/Cl2/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF2, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl2/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to ⟨110⟩ cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

  5. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    NASA Astrophysics Data System (ADS)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  6. Effects of plasma conditions on the shapes of features etched in Cl{sub 2} and HBr plasmas. I. Bulk crystalline silicon etching

    SciTech Connect

    Vyvoda, M.A.; Lee, H.; Malyshev, M.V.; Klemens, F.P.; Cerullo, M.; Donnelly, V.M.; Graves, D.B.; Kornblit, A.; Lee, J.T.

    1998-11-01

    We have studied the effects of source and bias powers, pressure, and feed gas composition on the shapes of SiO{sub 2}-masked crystalline silicon features etched in a transformer-coupled high density plasma system. Higher etching rates were obtained at higher source and bias powers, and higher pressure. The etching rates of isolated and nested trenches, isolated lines, and holes were nearly the same, indicating a negligible pattern density dependence. We did, however, observe a very weak decrease in etch rates with increasing aspect ratio at 2 mTorr in a pure Cl{sub 2} plasma. At 10 mTorr, no aspect ratio dependence was observed, except at the highest source and bias powers. Microtrenching was observed under certain plasma conditions and could be reduced by using higher bias powers. At 10 mTorr in a pure chlorine plasma, we observed a slight taper at the bottoms of the etched features and the formation of narrow microtrenches near feature corners. At 2 mTorr, the microtrenches were broader and overlapped near the center of narrow trenches to form pyramid-shaped trench bottoms. When a HBr plasma was used instead of Cl{sub 2}, the etching rate decreased by 50{percent} but the etching profiles were more vertical and the trench bottoms were flat. Isolated lines etched in the HBr plasma, however, revealed broad but shallow microtrenches near the edges of the line, suggesting that the flat trench bottoms were a result of broad microtrenches that overlapped. Trenches of 3 {mu}m depth and aspect ratios of 7 have been obtained using either HBr or Cl{sub 2}, exhibiting similar microfeatures as observed when etching shallower trenches. {copyright} {ital 1998 American Vacuum Society.}

  7. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    NASA Astrophysics Data System (ADS)

    Wang, Lijun; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  8. Plasma-enhanced etching of tungsten, tungsten silicide, and molybdenum in chlorine-containing discharges

    SciTech Connect

    Fischl, D.S.

    1988-01-01

    Thin films of tungsten, tungsten silicide, and molybdenum were etched both within and downstream from Cl{sub 2} discharges. Without a discharge, molecular chlorine did not etch the films. Experimental conditions ranged from 0.1 to 1.0 Torr pressure, 30 to 180{degree}C electrode temperature, 0.2 to 1.0 W/cm{sup 2} power density, and 3 to 200 sccm flow rate. In-discharge etch rates varied from 10 to 90 nm/min for tungsten (W), 10 to 450 nm/min for tungsten silicide (WSi{sub x}), and 1 to 8 nm/min for molybdenum (Mo). Small additions of BCl{sub 3}, during W and WSi{sub x} etching, significantly increased the etch rates and improved the reproducibility. When samples were positioned downstream from a Cl{sub 2} discharge, etching proceeded solely by chemical reaction of the film with chlorine atoms. Downstream and in-plasma tungsten etch rates were approximately equal at 110{degree}C, but the chlorine atom etch rate dropped more rapidly than the in-plasma etch rate as temperature decreased. In contrast, molybdenum etched faster by atoms alone than in the plasma, although atom etching was not observed below 100{degree}C. Reactions of tungsten with a modulated beam of chlorine atoms and molecules were also studied.

  9. Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature

    NASA Astrophysics Data System (ADS)

    Yamamoto, Hiroshi; Kuroda, Hiroki; Ito, Masafumi; Ohta, Takayuki; Takeda, Keigo; Ishikawa, Kenji; Kondo, Hiroki; Sekine, Makoto; Hori, Masaru

    2012-01-01

    The precise etching of organic films with a low dielectric constant (low-k) in a dual-frequency capacitively coupled plasma etching reactor with a plasma generation of 100 MHz and an applied bias of 2 MHz employing a gas mixture of hydrogen and nitrogen was performed by real-time control of the densities of hydrogen (H) and nitrogen (N) radicals based on real-time measurement of the Si substrate temperature. H and N radical densities were monitored near the sidewall of the reactor by vacuum ultraviolet absorption spectroscopy, and temperature was monitored by an optical fiber-type low-coherence interferometer. On the basis of the results of surface analysis by X-ray photoelectron spectroscopy, etched profiles were effectively determined from the chemical component of protection layers on the sidewall of the etched pattern affected by the ratio of H/(H+N) and substrate temperature. As the etching feature evolves, the ratio of radical density should be controlled temporally to maintain vertical profiles according to the change in substrate temperature. As a result, we have successfully realized an organic film with a vertical feature. These results indicate the need for autonomous control of the etch process based on real-time information on the plasma process for the next-generation ultrafine etching.

  10. Plasma etching of cavities into diamond anvils for experiments at high pressures and high temperatures

    SciTech Connect

    Weir, S.T.; Cynn, H.; Falabella, S.; Evans, W.J.; Aracne-Ruddle, C.; Farber, D.; Vohra, Y.K.

    2012-10-23

    We describe a method for precisely etching small cavities into the culets of diamond anvils for the purpose of providing thermal insulation for samples in experiments at high pressures and high temperatures. The cavities were fabricated using highly directional oxygen plasma to reactively etch into the diamond surface. The lateral extent of the etch was precisely controlled to micron accuracy by etching the diamond through a lithographically fabricated tungsten mask. The performance of the etched cavities in high-temperature experiments in which the samples were either laser heated or electrically heated is discussed.

  11. Low Temperature Plasma Surface Interactions: Atomic Layer Etching And Atmospheric Pressure Plasma Jet Modification Of Biomaterials

    NASA Astrophysics Data System (ADS)

    Oehrlein, Gottlieb

    2013-09-01

    Control of plasma-surface interactions is essential for successful application of low temperature plasma to materials processing. We review work performed in our laboratory in two areas: First, low pressure plasma surface interaction mechanisms aimed at achieving atomic precision in etching materials in the semiconductor industry. We discuss sequential reactions of surface passivation followed by directional low energy ion attack for ``volatile product'' removal to establish for what conditions self-limiting behavior required for Atomic Layer Etching (ALE) can be established using prototypical SiO2 -Si/fluorocarbon-Ar materials/etching systems. Second, studies of plasma-surface interactions related to application of a non-equilibrium atmospheric pressure plasma jet (APPJ) for modification of biomaterials are discussed. Changes in surface chemistry/biological activity of lipopolysaccharide (LPS) exposed to the APPJ plume/effluent in a controlled environment are reviewed. The results clarify how jet chemistry and interactions of plasma with the environment impact the consequences of APPJ-biomaterial-surface interactions. Based on collaborations with D. Metzler, S. Engelmann, R. Bruce, E. Joseph, E. Bartis, C. Hart, Q.-Y. Yang, J. Seog, T.-Y. Chung, H.-W. Chang, and D.B. Graves. We gratefully acknowledge funding from US Department of Energy (DE-SC0005105; DE-SC0001939) and National Science Foundation (CBET-1134273; PHY-1004256).

  12. Hydrogen manufacturing using plasma reformers

    SciTech Connect

    Bromberg, L.; Cohn, D.R.; Rabinovich, A.; Hochgreb, S.; O`Brien, C.

    1996-10-01

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes; in particular the possibility of virtual elimination of CO{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  13. CF3Br plasma cryo etching of low-k porous dielectric

    NASA Astrophysics Data System (ADS)

    Clemente, I.; Koehler, N.; Miakonkikh, A.; Zimmermann, S.; Schulz, S. E.; Rudenko, K.

    2016-08-01

    Process of plasma etching of CVD low-k dielectric was studied. We used CF3Br low pressure ICP plasma for etching at cryo temperatures (-20°C — -100°C), pressures (5-20 mTorr) and RF bias with effective DC voltage 80-140 V. Refractive index of film and its thickness were measured by spectral ellipsometry. Ellipsometric porosimetry was employed to compare pore size distribution before and after etching of films. Measurements show increasing of etch rate increase with decreasing sample temperature.

  14. Modelling of fluorine based high density plasma for the etching of silica glasses

    SciTech Connect

    Lallement, Ludovic; Rhallabi, Ahmed; Cardinaud, Christophe; Peignon Fernandez, Marie Claude

    2011-09-15

    An etching simulator has been developed to study the etching of commercial silica glass (Pyrex, D263, AF45, and Vycor) in a SF{sub 6}/Ar inductively coupled plasma (ICP) discharge. The etching model is based on the development of the plasma kinetic model coupled to a two dimensional (2D) Monte Carlo cellular surface model to predict the etched surface morphology as a function of the operating conditions. The SF{sub 6}/Ar plasma model allows us to predict the neutral and ion species fluxes, as well as the density and the temperature of electrons, as a function of the reactor operating conditions. Such output parameters are used as input parameters in both the sheath and etching models. The 2D Monte Carlo cellular model is based on the representation of both the substrate and the mask by uniform cells, which each represents a real number of sites. The preferential redeposition mechanism of the etched products on the metallic sites seems to play an important role on the formation and the propagation of the etched surface roughness. The results obtained by the model are compared with the experimental results for etching rate and roughness. A satisfactory agreement between the experimental results and the model concerning the etching rate and the etched surface morphology has been obtained for different glasses.

  15. Etching high aspect ratio structures in silicon using sulfur hexafluoride/oxygen plasma

    NASA Astrophysics Data System (ADS)

    Belen, Rodolfo Jun

    Plasma etching of high aspect ratio structures in Si is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to etch deep features anisotropically with high etch rates and selectivities to the mask while maintaining good uniformity and reproducibility. This study investigates the etching of deep sub-half-micron diameter holes in Si using SF6/O 2 plasma. Etching experiments and plasma diagnostics are combined with modeling to gain a fundamental understanding of the etching and passivation kinetics and mechanism necessary in developing and scaling-up processes. Etching experiments are conducted in an inductively coupled plasma reactor with a planar coil. The substrate electrode is biased with a separate rf power supply to achieve independent control of the ion flux and energy. The effects of pressure, rf-bias and SF6-to-O2 ratio in the feed gas on the etch rate, selectivity and feature profile shape are studied using Si wafers patterned with 0.35 mum-diameter holes in a SiO2 mask. Visualization of profiles using scanning electron microscopy is complemented by plasma diagnostics such as mass spectrometry and actinometry. Simultaneous with experiments, reactor-scale and feature-scale models are developed to quantify the etching and passivation kinetics and identify the important kinetic parameters that affect feature profile evolution. Information from plasma diagnostics and previously published data are used to reduce the degrees of freedom in the model. Experiments are designed to directly measure kinetic parameters such as the chemical etch rate constant and the incidence angle dependence of the etching yield. Experimentally inaccessible parameters such as the sticking coefficients, etching yield and ion scattering parameters are determined through feature profile simulation. The key internal plasma parameters that affect profile evolution are the F-to-O and F

  16. Inductively coupled plasma reactive ion etching of III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Shah, A. P.; Laskar, M. R.; Rahman, A. A.; Gokhale, M. R.; Bhattacharya, A.

    2013-02-01

    III-Nitride semiconductor materials are resistant to most wet chemical etch processes, and hence the only viable alternative is to use dry etching for device processing. However, the conventional Reactive Ion Etching (RIE) process results in very slow etch-rates because of low reactive ion density, and larger surface damage due to high energy ion bombardment. Using Inductively Coupled Plasma (ICP) RIE, a very fast etch-rate and smooth morphology is achieved due to independent control of ion density and ion energy. In this paper, we present our results on ICP-RIE of epitaxial III-N materials, namely c-plane and a-plane oriented GaN, AlN, AlxGa1-xN using various chlorine plasma chemistries based on Cl2 and BCl3. We have examined the role of BCl3 deoxidising pre-treatment on the etching of AlGaN alloys.

  17. Formation of plasma induced surface damage in silica glass etching for optical waveguides

    NASA Astrophysics Data System (ADS)

    Choi, D. Y.; Lee, J. H.; Kim, D. S.; Jung, S. T.

    2004-06-01

    Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit.

  18. High-density plasma etching of aluminum copper on titanium tungsten

    NASA Astrophysics Data System (ADS)

    Dang, Kim

    1999-09-01

    A multi-step high density plasma etch process, based on chlorine and sulfur hexafluoride chemistry (SF6), for LRC single wafer metal etcher was developed, characterized and optimized to anisotropically etch the metal stack which consists of a thin titanium tungsten ARC, hot deposited aluminum copper over titanium tungsten. The titanium tungsten used in the metal structure presents unique constraints on etch selectivity to underlying film while simultaneously requiring clearing metal stringers. The etching was further complicated by lateral etching of aluminum copper (AlCu) during titanium tungsten (TiW) etch and overetch steps. With the help of design-of-experiment techniques, multi-variable factorial experiments were conducted to determine the optimum processes for the bulk metal etch, barrier metal layer etch and overetch steps. Characterization parameters include the metal etch rate, etch selectivity, CD line-width, metal resistance and plasma charging damages. Special attention was paid to the overetch window since the metal quality is very sensitive to the overetch conditions. Insufficient overetch may leave metal stingers or metal shorts. Excessive overetch may cause severe CD undercutting and great loss of TEOS oxide under-layer.

  19. Novel spin-on organic hardmask with high plasma etch resistance

    NASA Astrophysics Data System (ADS)

    Oh, Chang-Il; Lee, Jin-Kuk; Kim, Min-Soo; Yoon, Kyong-Ho; Cheon, Hwan-Sung; Tokareva, Nataliya; Song, Jee-Yun; Kim, Jong-Seob; Chang, Tu-Won

    2008-03-01

    In recent years for memory devices under 70nm using ArF lithography, spin-on organic hardmask has become an attractive alternative process to amorphous carbon layer hardmark (ACL) in mass production due to ACL hardmask's limited capacity, high cost-of-ownership, and low process efficiency in spite of its excellent etch performance. However, insufficient plasma etch resistance of spin-on hardmask makes the etch process an issue resulting in inadequate vertical profiles, large CD bias, and narrow etch process window compared to ACL hardmask. In order to be able to apply these spin on hardmasks to varies layers including critical layers, the aforementioned problems need to be resolved and verified using several evaluation methods including etch pattern evaluation. In this paper, we report the synthesis of novel organic spin-on hardmasks (C-SOH) that incorporate various fused aromatic moieties into polymer chain and the evaluation of etch performance using dry etch tools. Organic spin-on hardmasks with 79-90 wt% carbon contents were synthesized in-house. Oxygen and fluorine based plasma etch processes were used to evaluate the etch resistance of the C-SOH. The results show our 3rd generation C-SOH has etch profiles comparable to that of ACL in a 1:1 dense pattern.

  20. Optical Diagnostics of the Plasma and Surface during Inductively Coupled Plasma Etching

    NASA Astrophysics Data System (ADS)

    Herman, Irving P.

    1999-10-01

    The use of optical diagnostics to analyze the etching of Si, Ge, and InP by chlorine in an inductively coupled plasma (ICP) is investigated. Optical probes, along with other conventional plasma diagnostics, are used to characterize the process through measurements of the constituents of the plasma and the surface composition to obtain a more complete picture of the etching process. Neutral Cl2 and Cl densities are determined by optical emission actinometry by following optical emission from Cl_2. The absolute densities of Cl_2^+ and Cl^+ are determined by laser- induced fluorescence (LIF) of Cl_2^+ and Langmuir probe measurements of the total positive ion density. The surface is probed by using laser-induced thermal desorption with an XeCl laser (308 nm) to desorb the steady-state adlayer and optical methods to detect these desorbed species. The development of a new method to detect optically these laser desorbed (LD) species is detailed, that of examining transient changes in the plasma-induced emission (PIE). This LD-PIE method is more universal than the previously reported detection by LIF (LD-LIF), but requires more calibration due to varying electron density and temperature with varying plasma conditions. This is detailed for Si etching, for which LD-PIE and LD-LIF results are compared. The calibration methods are seen to be valid when the surface is analyzed as the rf power supplied to the reactor is varied. The electron density - needed for LD-PIE calibration - is measured by microwave interferometry. An improved understanding of the etching mechanism is obtained by combining the results of each of these measurements. This work was supported by NSF Grant No. DMR-98-15846. note

  1. Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching

    NASA Astrophysics Data System (ADS)

    Gul, Banat; Tinck, Stefan; De Schepper, Peter; Rehman, Aman-ur-; Bogaerts, Annemie

    2015-01-01

    A two-dimensional hybrid Monte Carlo—fluid model is applied to study HBr/He inductively coupled plasmas used for etching of Si. Complete sets of gas-phase and surface reactions are presented and the effects of the gas mixing ratio on the plasma characteristics and on the etch rates are discussed. A comparison with experimentally measured etch rates is made to validate the modelling results. The etch rate in the HBr plasma is found to be quite low under the investigated conditions compared to typical etch rates of Si with F- or Cl-containing gases. This allows for a higher control and fine-tuning of the etch rate when creating ultra-small features. Our calculations predict a higher electron temperature at higher He fraction, because the electrons do not lose their energy so efficiently in vibrational and rotational excitations. As a consequence, electron impact ionization and dissociation become more important, yielding higher densities of ions, electrons and H atoms. This results in more pronounced sputtering of the surface. Nevertheless, the overall etch rate decreases upon increasing He fraction, suggesting that chemical etching is still the determining factor for the overall etch rate.

  2. Etching mechanism of niobium in coaxial Ar/Cl{sub 2} radio frequency plasma

    SciTech Connect

    Upadhyay, J.; Im, Do; Popović, S.; Vušković, L.; Valente-Feliciano, A.-M.; Phillips, L.

    2015-03-21

    The understanding of the Ar/Cl{sub 2} plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl{sub 2} concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  3. Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

    SciTech Connect

    Upadhyay, Janardan; Im, Do; Popovic, Svetozar; Valente-Feliciano, Anne -Marie; Phillips, H. Larry; Vuskovic, Leposova

    2015-03-18

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. Furthermore, to understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  4. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

    2016-08-01

    Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

  5. Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces

    NASA Astrophysics Data System (ADS)

    Kim, Joon Hyub; Lee, Jun-Yong; Min, Nam Ki

    2012-08-01

    We present an effective method for the batch fabrication of miniaturized single-walled carbon nanotube (SWCNT) film electrodes using oxygen plasma etching. We adopted the approach of spray-coating for good adhesion of the SWCNT film onto a pre-patterned Pt support and used O2 plasma patterning of the coated films to realize efficient biointerfaces between SWCNT surfaces and biomolecules. By these approaches, the SWCNT film can be easily integrated into miniaturized electrode systems. To demonstrate the effectiveness of plasma-etched SWCNT film electrodes as biointerfaces, Legionella antibody was selected as analysis model owing to its considerable importance to electrochemical biosensors and was detected using plasma-etched SWCNT film electrodes and a 3,3',5,5'-tetramethyl-benzidine dihydrochloride/horseradish peroxidase (TMB/HRP) catalytic system. The response currents increased with increasing concentration of Legionella antibody. This result indicates that antibodies were effectively immobilized on plasma-etched and activated SWCNT surfaces.

  6. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

    NASA Astrophysics Data System (ADS)

    Gul, Banat; Aman-ur-Rehman

    2015-10-01

    Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr+, Br+, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

  7. A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

    SciTech Connect

    Gul, Banat; Aman-ur-Rehman

    2015-10-15

    Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

  8. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

    SciTech Connect

    Zhu, Weiye; Sridhar, Shyam; Liu, Lei; Hernandez, Eduardo; Donnelly, Vincent M. Economou, Demetre J.

    2014-05-28

    Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

  9. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    DOEpatents

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  10. Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature

    NASA Astrophysics Data System (ADS)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Zhang, S.; Hu, X. N.; Ding, R. J.; He, L.

    2016-05-01

    To fabricate various advanced structures with HgCdTe material, the Inductively Coupled Plasma enhanced Reactive Ion Etching system is indispensable. However, due to low damage threshold and complicated behaviors of mercury in HgCdTe, the lattice damage and induced electrical conversion is very common. According to the diffusion model during etching period, the mercury interstitials, however, may not diffuse deep into the material at cryogenic temperature. In this report, ICP etching of HgCdTe at cryogenic temperature was implemented. The etching system with cryogenic assembly is provided by Oxford Instrument. The sample table was cooled down to 123K with liquid nitrogen. The mask of SiO2 with a contact layer of ZnS functioned well at this temperature. The selectivity and etching velocity maintained the same as reported in the etching of room temperature. Smooth and clean surfaces and profiles were achieved with an optimized recipe.

  11. Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    Ye, Z. H.; Hu, W. D.; Yin, W. T.; Huang, J.; Lin, C.; Hu, X. N.; Ding, R. J.; Chen, X. S.; Lu, W.; He, L.

    2011-08-01

    A novel mask technique utilizing patterned silicon dioxide films has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal-plane arrays (IRFPAs). High-density silicon dioxide films were deposited at temperature of 80°C, and a procedure for patterning and etching of HgCdTe was developed by standard photolithography and wet chemical etching. Scanning electron microscopy (SEM) showed that the surfaces of inductively coupled plasma (ICP) etched samples were quite clean and smooth. Root-mean-square (RMS) roughness characterized by atomic force microscopy (AFM) was less than 1.5 nm. The etching selectivity between a silicon dioxide film and HgCdTe in the samples masked with patterned silicon dioxide films was greater than 30:1. These results show that the new masking technique is readily available and promising for HgCdTe mesa etching.

  12. Etching of CVD diamond films using oxygen ions in ECR plasma

    NASA Astrophysics Data System (ADS)

    Ma, Zhibin; Wu, Jun; Shen, Wulin; Yan, Lei; Pan, Xin; Wang, Jianhua

    2014-01-01

    Etching with oxygen ions produced by ECR plasma with an asymmetric magnetic mirror field was investigated as a potential technique for polishing CVD diamond. The morphology, structure and roughness of the diamond film surface before and after etching were analyzed respectively using scanning electron microscope (SEM), Raman spectroscopy and surface roughness measuring instrument. It was found that the ridges on diamond surface had been preferentially etched away and thereby the surface roughness decreased from 3.061 to 1.083 μm after 4 h etching. Meanwhile, non-diamond phase appeared on surface and dramatically increased with the extending of etching time. In order to fundamentally understand the etching mechanism, an etching model of diamond film was reasonably proposed on the ground of the experimental results and the theory of plasma physics. The as-generated ions taking screw movement are firstly accelerated along the magnetic field lines in the plasma and collisional presheath, and then deflected from their route towards the diamond film in the MP. When coming into Debye sheath, the motion of ions will be deflected further and strongly accelerated by electric field in the direction normal to the (1 1 1) crystal facets. This process gave rise to energetic ion bombardment towards every (1 1 1) crystal face, and thereby caused preferential etching of pyramidal crystallites.

  13. Tantalum carbide etch characterization in inductively coupled Ar/Cl{sub 2}/HBr plasmas

    SciTech Connect

    Kawai, H.; Rauf, S.; Luckowski, E.; Ventzek, P. L. G.

    2006-09-15

    The etching properties of tantalum carbide (TaC) in inductively coupled Ar/HBr/Cl{sub 2} plasmas are investigated in this article. Both etching experiments on patterned and blanket wafers and an integrated plasma equipment-feature scale computational model are utilized in this investigation. Results show that TaC etching is adequately described by the classical reactive ion etching mechanism, whereby etching occurs due to the synergistic effect of Cl or Br atoms and energetic ions. TaC etches faster in the presence of Cl relative to Br. The TaC etch rate is small in gas mixtures containing 5% of Cl{sub 2} or HBr and 95% of Ar, and it increases considerably as Cl{sub 2} or HBr concentration is increased. Although this etch rate increase is partially due to the availability of more Cl or Br, the chemical nature of chlorine (Cl{sub 2}{sup +},Cl{sup +}) or bromine (Br{sup +}) ions also plays a strong role. The TaC etch rate increases little if Cl{sub 2} or HBr fraction in Ar/Cl{sub 2} or Ar/HBr gas mixture, respectively, is increased beyond 25%. The TaC etch rate increases with rf bias power under all conditions. Scanning electron micrographs of TaC films etched using a patterned mask show that TaC sidewalls are tapered at about 77 deg. {+-}3 deg. and the angle does not change appreciably with gas mixture or rf bias power. It is determined that an angle dependent ion etching yield captures well the observed trends in TaC sidewall slope.

  14. Plasma etching of high-resolution features in a fullerene molecular resist

    NASA Astrophysics Data System (ADS)

    Manyam, J.; Manickam, M.; Preece, J. A.; Palmer, R. E.; Robinson, A. P. G.

    2011-04-01

    As resist films become thinner, so as to reduce problems of aspect ratio related pattern collapse at high-resolution, it is becoming increasingly difficult to transfer patterns with useful aspect ratio by directly etching the resist. It has become common to use the photoresist to pattern an intermediate hardmask, which then protects the silicon substrate during etching, allowing useful aspect ratios but adding process complexity. We have previously described a fullerene based electron beam lithography resist capable of 20 nm halfpitch and 12 nm sparse features, at a sensitivity of less than 10 μC/cm2 at 20 keV. The fullerene resist has high etch durability - comparable to that of commercial novolac resists - and has previously demonstrated an etch selectivity of 3:1 to silicon using electron cyclotron resonance microwave plasma etching with SF6. Here a study of the capabilities of this resist when using Inductively Coupled Plasma etching is presented. Line-space patterns with half-pitches in the range 25 nm to 100 nm, together with sparse features (~20 nm linewidth on a 200 nm pitch) were produced in ~30 nm thick resist films using electron beam lithography, and transferred to silicon using an inductively coupled plasma etcher. Several combinations of SF6, CF4, CHF3 and C4F8process gases were explored. Etch selectivity and anisotropy were studied as a range of etching parameters, such as ICP and RF power, gas flow rate, pressure and temperature were varied. Etch selectivities in excess of 9:1 were demonstrated. Techniques for minimizing aspect ratio dependent etching effects in dense features, including the use of ashing or high etching pressures were also examined.

  15. Plasma Etching of superconducting radio frequency cavity by Ar/Cl2 capacitively coupled Plasma

    NASA Astrophysics Data System (ADS)

    Upadhyay, Janardan; Popovic, Svetozar; Valente-Feliciano, Anne-Marie; Phillips, Larry; Vuskovic, Lepsha

    2016-09-01

    We are developing plasma processing technology of superconducting radio frequency (SRF) cavities. The formation of dc self-biases due to surface area asymmetry in this type of plasma and its variation on the pressure, rf power and gas composition was measured. Enhancing the surface area of the inner electrode to reduce the asymmetry was studied by changing the contour of the inner electrode. The optimized contour of the electrode based on these measurements was chosen for SRF cavity processing. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used, which previously mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. Plasma processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  16. Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

    SciTech Connect

    Kuboi, Nobuyuki Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro

    2015-11-15

    The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

  17. Plasma etching behavior of Y2O3 ceramics: Comparative study with Al2O3

    NASA Astrophysics Data System (ADS)

    Cao, Yu-Chao; Zhao, Lei; Luo, Jin; Wang, Ke; Zhang, Bo-Ping; Yokota, Hiroki; Ito, Yoshiyasu; Li, Jing-Feng

    2016-03-01

    The plasma etching behavior of Y2O3 coating was investigated and compared with that of Al2O3 coating under various conditions, including chemical etching, mixing etching and physical etching. The etching rate of Al2O3 coating declined with decreasing CF4 content under mixing etching, while that of Y2O3 coating first increased and then decreased. In addition, the Y2O3 coating demonstrated higher erosion-resistance than Al2O3 coating after exposing to fluorocarbon plasma. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formations of YF3 and AlF3 on the Y2O3 and Al2O3 coatings, respectively, which acted as the protective layer to prevent the surface from further erosion with fluorocarbon plasma. It was revealed that the etching behavior of Y2O3 depended not only on the surface fluorination but also on the removal of fluoride layer. To analyze the effect of porosity, Y2O3 bulk samples with high density were prepared by spark plasma sintering, and they demonstrated higher erosion-resistances compared with Y2O3 coating.

  18. A in Situ Study of Plasma Etching Surface Chemistry Using Reflection Infrared Spectroscopy

    NASA Astrophysics Data System (ADS)

    Lucchesi, Robert Peter

    Plasma etching is an important process in semiconductor manufacturing. The present work describes a means by which plasma etching surface chemistry may be studied in situ. The systems of interest were the sulfur hexafluoride plasma etching of silicon and tungsten in a diode reactor. A reflection infrared spectrometer was designed and constructed to be able to scan the frequency region from about 550cm ^{-1} to 1300cm ^{-1}, and a plasma etch reactor was modified to allow access to the infrared beam. Reflection infrared spectroscopy (RIS) allows the measurement of light absorbed by molecules adsorbed on a reflective surface selectively from light absorbed by molecules in the gas phase. RIS applied to heavily doped silicon substrates had limited success. While sulfur fluorine species were detected on the surface during plasma etching, no silicon fluorine species were ever detected. The sulfur fluorine species (referred to as SF_{rm x}) were not seen under any circumstances in the absence of an SF_6 plasma. Severe baseline drift of the infrared spectrometer during plasma etching was the main reason for the limited success. However, the results were significant in that they demonstrated the presence of sulfur fluorine species during the plasma etching of silicon in an SF_6 plasma. The baseline drift problems experienced with silicon were not found when tungsten was studied. The same SF _{rm x} feature detected on silicon was also found on tungsten during etching in an SF_6 plasma, but was never seen in the absence of the plasma. A detailed experimental and theoretical study was performed to show that the surface absorption feature seen was actually due to SF _{rm x} adsorbed on the surface. A hysteresis behavior was observed in the SF_ {rm x} concentration as the plasma power was ramped up and subsequently decreased. Finally, it could not be concluded if SF_{rm x} participated in the etch reaction by fluorinating the tungsten surface, but the presence of SF_ {rm x} on

  19. Self-organization of hydrogen gas bubbles rising above laser-etched metallic aluminum in a weakly basic aqueous solution.

    PubMed

    Barmina, E V; Kuzmin, P G; Shafeev, G A

    2011-10-01

    Self-organization of hydrogen bubbles is reported under etching of metallic Aluminum in a weakly basic solution. The ascending gas bubbles drift to the areas with higher density of bubbles. As a result, ascending bubbles form various stationary structures whose symmetry is determined by the symmetry of the etched area. Bubbles are aligned along the bisectors of the contour of the etched area. The special laser-assisted profiling of the etched area in shape of a vortex induces a torque in the fluid above the etched area. The process is interpreted on the basis of Bernoulli equation.

  20. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    NASA Astrophysics Data System (ADS)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  1. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    SciTech Connect

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  2. Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

    NASA Technical Reports Server (NTRS)

    Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

    1998-01-01

    The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

  3. A statistical approach to optimization of alumina etching in a high density plasma

    SciTech Connect

    Li Xiao; Gupta, Subhadra; Highsmith, Alton; Paranjpe, Ajit; Rook, Katrina

    2008-08-01

    Inductively coupled plasma (ICP) reactive ion etching of Al{sub 2}O{sub 3} with fluorine-based gas chemistry in a high density plasma reactor was carried out in an initial investigation aimed at data storage applications. A statistical design of experiments was implemented to optimize etch performance with respect to process variables such as ICP power, platen power, direct current (dc) bias, and pressure. Both soft photoresist masks and hard metal masks were investigated in terms of etch selectivity and surface properties. The reverse power dependence of dc bias on the ratio of ICP to platen power was elucidated. Etch mechanisms in terms of physical and ion enhanced chemical etchings were discussed. The F-based chemistry greatly enhances the etch rate of alumina compared to purely physical processes such as ion milling. Etch rates as high as 150 nm/min were achieved using this process. A practical process window was developed for high etch rates, with reasonable selectivity to hard masks, with the desired profile, and with low substrate bias for minimal damage.

  4. Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

    SciTech Connect

    Li, Hu; Muraki, Yu; Karahashi, Kazuhiro; Hamaguchi, Satoshi

    2015-07-15

    Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +} or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.

  5. Charging effect simulation model used in simulations of plasma etching of silicon

    SciTech Connect

    Ishchuk, Valentyn; Volland, Burkhard E.; Hauguth, Maik; Rangelow, Ivo W.; Cooke, Mike

    2012-10-15

    Understanding the consequences of local surface charging on the evolving etching profile is a critical challenge in high density plasma etching. Deflection of the positively charged ions in locally varying electric fields can cause profile defects such as notching, bowing, and microtrenching. We have developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process. The model is fully integrated into ViPER (Virtual Plasma Etch Reactor)-a full featured plasma processing simulation software developed at Ilmenau University of Technology. As a consequence, we show that local surface charge concurrently evolves with the feature profile to affect the final shape of the etched feature. Using gas chopping (sometimes called time-multiplexed) etch process for experimental validation of the simulation, we show that the model provides excellent fits to the experimental data and both, bowing and notching effects are captured-as long as the evolving profile and surface charge are simultaneously simulated. In addition, this new model explains that surface scallops, characteristic of gas chopping technique, are eroded and often absent in the final feature profile due to surface charging. The model is general and can be applied across many etching chemistries.

  6. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

    PubMed Central

    2014-01-01

    In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

  7. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    SciTech Connect

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  8. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

    SciTech Connect

    Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R.; Shul, R.J.; McLane, G.F.; Ren, F.

    1996-04-01

    Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

  9. Collector optic cleaning by in-situ hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Elg, Daniel T.; Panici, Gianluca A.; Srivastava, Shailendra N.; Ruzic, D. N.

    2015-03-01

    Extreme ultraviolet (EUV) lithography sources produce EUV photons by means of a hot, dense, highly-ionized Sn plasma. This plasma expels high-energy Sn ions and neutrals, which deposit on the collector optic used to focus the EUV light. This Sn deposition lowers the reflectivity of the collector optic, necessitating downtime for collector cleaning and replacement. A method is being developed to clean the collector with an in-situ hydrogen plasma, which provides hydrogen radicals that etch the Sn by forming gaseous SnH4. This method has the potential to significantly reduce collector-related source downtime. EUV reflectivity restoration and Sn cleaning have been demonstrated on multilayer mirror samples attached to a Sn-coated 300mm-diameter steel dummy collector driven at 300W RF power with 500sccm H2 and a pressure of 260mTorr. Use of the in-situ cleaning method is also being studied at industriallyapplicable high pressure (1.3 Torr). Plasma creation across the dummy collector surface has been demonstrated at 1.3 Torr with 1000sccm H2 flow, and etch rates have been measured. Additionally, etching has been demonstrated at higher flow rates up to 3200sccm. A catalytic probe has been used to measure radical density at various pressures and flows. The results lend further credence to the hypothesis that Sn removal is limited not by radical creation but by the removal of SnH4 from the plasma. Additionally, further progress has been made in an attempt to model the physical processes behind Sn removal.

  10. Sensitivity Enhancement of RF Plasma Etch Endpoint Detection With K-means Cluster Analysis

    NASA Astrophysics Data System (ADS)

    Lee, Honyoung; Jang, Haegyu; Lee, Hak-Seung; Chae, Heeyeop

    2015-09-01

    Plasma etching process is the core process in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist, dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0% oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD. Plasma Etch, EPD, K-means Cluster Analysis.

  11. Effect of post-annealing on the plasma etching of graphene-coated-copper.

    PubMed

    Hui, L S; Whiteway, E; Hilke, M; Turak, A

    2014-01-01

    High temperature deposition of graphene on Cu by chemical vapor deposition can be used to produce high quality films. However, these films tend to have a non-equilibrium structure, with relatively low graphene adhesion. In this study, samples of graphene grown on copper foils by high temperature CVD were post-deposition annealed at temperatures well below the critical temperature of Cu. Resistance to etching under plasma was examined to assess the mechanical robustness of the graphene on the Cu surface, analyzed using optical and Raman microscopies. We found a correlation between the post-annealing time and etching time for the complete removal of graphene from Cu. Etching rates, minimum etch times, and surface appearance were observed to vary depending on the etching plasma (air, oxygen or nitrogen). Oxygen plasmas were found to be the least aggressive, emphasizing the improved adhesion with post-annealing treatments. Our results imply that the etching of graphene on Cu, and hence the adhesion of graphene, can be controlled by proper annealing and choice of plasma gas.

  12. Effect of gas composition on spore mortality and etching during low-pressure plasma sterilization.

    PubMed

    Lerouge, S; Wertheimer, M R; Marchand, R; Tabrizian, M; Yahia, L

    2000-07-01

    The aim of this work was to investigate possible mechanisms of sterilization by low-temperature gas plasma: spore destruction by plasma is compared with etching of synthetic polymers. Bacillus subtilis spores were inoculated at the bottom of glass vials and subjected to different plasma gas compositions (O(2), O(2)/Ar, O(2)/H(2), CO(2), and O(2)/CF(4)), all known to etch polymers. O(2)/CF(4) plasma exhibited much higher efficacy than all other gases or gas mixtures tested, with a more than 5 log decrease in 7.5 min, compared with a 2 log decrease with pure oxygen. Examination by scanning electron microscopy showed that spores were significantly etched after 30 min of plasma exposure, but not completely. We speculate about their etch resistance compared with that of synthetic polymers on the basis of their morphology and complex coating structure. In contrast to so-called in-house plasma, sterilization by Sterrad(R) tended to increase the observed spores' size; chemical modification (oxidation), rather than etching, is believed to be the sterilization mechanism of Sterrad(R).

  13. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    SciTech Connect

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  14. Plasma etching of HfO{sub 2} at elevated temperatures in chlorine-based chemistry

    SciTech Connect

    Helot, M.; Chevolleau, T.; Vallier, L.; Joubert, O.; Blanquet, E.; Pisch, A.; Mangiagalli, P.; Lill, T.

    2006-01-15

    Plasma etching of HfO{sub 2} at an elevated temperature is investigated in chlorine-based plasmas. Thermodynamic studies are performed in order to determine the most appropriate plasma chemistry. The theoretical calculations show that chlorocarbon gas chemistries (such as CCl{sub 4} or Cl{sub 2}-CO) can result in the chemical etching of HfO{sub 2} in the 425-625 K temperature range by forming volatile effluents such as HfCl{sub 4} and CO{sub 2}. The etching of HfO{sub 2} is first studied on blanket wafers in a high density Cl{sub 2}-CO plasma under low ion energy bombardment conditions (no bias power). Etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rate as function of temperature follows an Arrhenius law indicating that the etching comes from chemical reactions. The etch rate of HfO{sub 2} is about 110 A /min at a temperature of 525 K with a selectivity towards SiO{sub 2} of 15. x-ray photoelectron spectroscopy analyses (XPS) reveal that neither carbon nor chlorine is detected on the HfO{sub 2} surface, whereas a chlorine-rich carbon layer is formed on top of the SiO{sub 2} surface leading to the selectivity between HfO{sub 2} and SiO{sub 2}. A drift of the HfO{sub 2} etch process is observed according to the chamber walls conditioning due to chlorine-rich carbon coatings formed on the chamber walls in a Cl{sub 2}-CO plasma. To get a very reproducible HfO{sub 2} etch process, the best conditioning strategy consists in cleaning the chamber walls with an O{sub 2} plasma between each wafer. The etching of HfO{sub 2} is also performed on patterned wafers using a conventional polysilicon gate. The first result show a slight HfO{sub 2} foot at the bottom of the gate and the presence of hafnium oxide-based residues in the active areas.

  15. Negative Ion Metal Etching by Employing Magnetic Filter in Halogen Plasma

    NASA Astrophysics Data System (ADS)

    Horiike, Y.

    1998-10-01

    To neutralize the positively charged-up bottom surfaces of high aspect ratio holes or gaps, generation of negative ions in halogen downstream plasmas and their alternate irradiation by the transformer coupling of the RF field with the electrode have been studied. In the previous work, the Si etching employing negative ions revealed the high etching reactivity which resulted from the fact that dominant negative species were formed by ions of atoms like F^- in SF6 and Cl^- in Cl2 plasmas. It is expected that the negative ion etching is more effective for metals because the metal bonding is weakened by supply of negative charge. Indeed, the Al-Si-Cu etch rate of 130 nm/sec was achieved. However, the negative ions are difficult to be introduced to an electrode covered by insulators such as an electrostatic chucking due to generation of the self biasing. To overcome this problem, the trapping of electrons was examined in the downstream choline plasma by employing a magnetic filter, which consisted of a pair of water-cooled high current coils set in the etching chamber. The ratio of positively biasing to negatively biasing saturation currents was reduced as low as several. However, at present still remained electrons generate a little self biasing, thus lowering Al etch rates.

  16. Uniform Plasma Etching of Complex Shaped Three Dimensional Niobium Structures for Particle Accelerators

    NASA Astrophysics Data System (ADS)

    Upadhyay, Janardan; Im, Do; Peshl, Jeremy; Popovic, Svetozar; Vuskovic, Lepsha; Phillips, Larry; Valente-Felliciano, Anne-Marie

    2014-10-01

    Complex shaped three dimensional niobium structures are used in particle accelerators as super conducting radio frequency (SRF) cavities. The inner surfaces of these structures have to be chemically etched for better performance, as SRF performance parameters are very sensitive to their properties. Plasma etching of inner surface of three dimensional niobium structures has not been reported even though plasma etching of niobium has been reported earlier for Josephson junction and other applications. We are proposing an RF capacitively coupled coaxial (ccp) plasma etching method for nano machining of niobium structures for SRF applications. We are using gas mixture of Argon and Chlorine. We report the effects of the pressure, RF power, gas concentration, shape and size of the inner electrode, temperature of the structure, DC bias voltage and residence time on the etch rate of the niobium. We also show the method to reduce the asymmetry effect in coaxial ccp by changing the shape of the inner electrode in cylindrical structure, as well as a method to overcome the severe loading effect in etching of 3D structures for uniform mass removal purpose. Supported by DOE under Grant No. DE-SC0007879. J.U. acknowledges support by JSA/DOE via DE-AC05-06OR23177.

  17. Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch

    NASA Astrophysics Data System (ADS)

    Nakamura, Shingo; Itano, Mitsushi; Aoyama, Hirokazu; Shibahara, Kentaro; Yokoyama, Shin; Hirose, Masataka

    2003-09-01

    Saturated perfluorocarbons (PFCs) such as CF4, C2F6, C3F8 and c-C4F8 are used as dry-etch gases in the semiconductor industry. They have a significant greenhouse effect. Unsaturated fluorocarbons can be alternated with these PFCs because of their easy decomposition in the atmosphere. The authors have diagnosed the plasmas generated from straight-chain unsaturated gases such as C3F6, C4F6, C4F8 and C5F8 in an inductively coupled plasma reactor and have compared their etch properties. It was found that high selectivity has been obtained in a C4F6 or C5F8 plasma without mixing any specific gases. Fine contact holes of approximately 100 nm in diameter also have been obtained using C4F6 or C5F8 with or without adding Ar or O2. These good etch properties of C4F6 and C5F8 have been achieved as a consequence of the appropriate balance between the lower density of fluorocarbon polymers and the dominant etching species CF+ with lower etching efficiency. It can be concluded that C4F6 and C5F8 can be used as PFC replacements for the dry-etch gas.

  18. Insight into hydrogenation of graphene: Effect of hydrogen plasma chemistry

    SciTech Connect

    Felten, A.; Nittler, L.; Pireaux, J.-J.; McManus, D.; Rice, C.; Casiraghi, C.

    2014-11-03

    Plasma hydrogenation of graphene has been proposed as a tool to modify the properties of graphene. However, hydrogen plasma is a complex system and controlled hydrogenation of graphene suffers from a lack of understanding of the plasma chemistry. Here, we correlate the modifications induced on monolayer graphene studied by Raman spectroscopy with the hydrogen ions energy distributions obtained by mass spectrometry. We measure the energy distribution of H{sup +}, H{sub 2}{sup +}, and H{sub 3}{sup +} ions for different plasma conditions showing that their energy strongly depends on the sample position, pressure, and plasma power and can reach values as high as 45 eV. Based on these measurements, we speculate that under specific plasma parameters, protons should possess enough energy to penetrate the graphene sheet. Therefore, a graphene membrane could become, under certain conditions, transparent to both protons and electrons.

  19. Study of organic polymer thin-film etching by plasma beam irradiation

    NASA Astrophysics Data System (ADS)

    Kurihara, Kazuaki; Egami, Akihiro; Nakamura, Moritaka

    2005-10-01

    We investigated the etching characteristics of three kinds of methacrylate polymer films which have the same main chain with a different side chain using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate (PtBuMA), polybenzylmethacrylate (PBMA), and polycyclohexylmethacrylate (PCHMA). The etch yield (EY) of PtBuMA was higher than those of the others in the case of N2 plasma beam. The EYs of PBMA and PCHMA increased with an increase in the ion energy of up to 330 eV and saturated at over 330 eV. On the other hand, that of PtBuMA was almost constant at the ion energy higher than 130 eV. It was supposed that nitridation of the polymer plays an important role in the enhancement of etching by N2 plasma. In the case of Ar plasma, EY increased linearly with an increase in the square root of ion energy for every polymer. In the case of H2 plasmas, EY scarcely depended on the ion energy regardless of the polymers. Etching behaviors with Ar and H2 plasma irradiation showed physical sputtering and chemical sputtering, respectively. The order of the magnitude of EY was PtBuMA, PCHMA, and PBMA for all of the Ar, H2, and N2 plasmas.

  20. Study of organic polymer thin-film etching by plasma beam irradiation

    SciTech Connect

    Kurihara, Kazuaki; Egami, Akihiro; Nakamura, Moritaka

    2005-10-15

    We investigated the etching characteristics of three kinds of methacrylate polymer films which have the same main chain with a different side chain using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate (PtBuMA), polybenzylmethacrylate (PBMA), and polycyclohexylmethacrylate (PCHMA). The etch yield (EY) of PtBuMA was higher than those of the others in the case of N{sub 2} plasma beam. The EYs of PBMA and PCHMA increased with an increase in the ion energy of up to 330 eV and saturated at over 330 eV. On the other hand, that of PtBuMA was almost constant at the ion energy higher than 130 eV. It was supposed that nitridation of the polymer plays an important role in the enhancement of etching by N{sub 2} plasma. In the case of Ar plasma, EY increased linearly with an increase in the square root of ion energy for every polymer. In the case of H{sub 2} plasmas, EY scarcely depended on the ion energy regardless of the polymers. Etching behaviors with Ar and H{sub 2} plasma irradiation showed physical sputtering and chemical sputtering, respectively. The order of the magnitude of EY was PtBuMA, PCHMA, and PBMA for all of the Ar, H{sub 2}, and N{sub 2} plasmas.

  1. Thermodynamic properties of hydrogen-helium plasmas

    NASA Technical Reports Server (NTRS)

    Nelson, H. F.

    1971-01-01

    The thermodynamic properties of an atomic hydrogen-helium plasma are calculated and tabulated for temperatures from 10,000 to 100,000 K as a function of the mass fraction ratio of atomic hydrogen. The tabulation is for densities from 10 to the minus 10th power to 10 to the minus 6th power gm/cu cm and for hydrogen mass fraction ratios of 0, 0.333, 0.600, 0.800, and 1.0, which correspond to pure helium, 50 percent hydrogen per unit volume, 75 percent hydrogen per unit volume, 89 percent hydrogen per unit volume, and pure hydrogen plasmas, respectively. From an appended computer program, calculations can be made at other densities and mass fractions. The program output agrees well with previous thermodynamic property calculations for limiting cases of pure hydrogen and pure helium plasmas.

  2. Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gohier, A.; Minea, T. M.; Djouadi, M. A.; Granier, A.

    2007-03-01

    Vertically oriented single wall nanotubes (SWNTs) and few walled nanotubes (FWNTs) have been grown by electronic cyclotron resonance plasma enhanced chemical vapor deposition (PECVD) on silica flat substrates. The impact of the plasma parameters on SWNT and FWNT growth has been investigated using two different etching gas mixtures, namely, C2H2/NH3 and C2H2/H2 with various ratios and applied bias voltages. Kinetic studies are also proposed in order to describe the FWNT growth mechanism by plasma techniques. A key role played by the reactive gas (NH3 and H2) is observed in the PECVD process, contrary to multiwalled nanotube growth. It is demonstrated that the balance between FWNT growth versus FWNT etching can be widely modulated by varying the gas mixture and bias voltage. It is shown that the use of hydrogen for hydrocarbon gas dilution restricts the destruction of SWNT and FWNT by the plasma species (ions and radicals).

  3. Surface analysis of polysilicon gate etching by pulsed-microwave plasma

    NASA Astrophysics Data System (ADS)

    Matsui, Miyako; Morimoto, Michikazu; Ikeda, Norihiko; Yokogawa, Kenetsu

    2014-01-01

    The mechanism of highly selective etching by a pulsed-microwave electron-cyclotron-resonance plasma was investigated by analyzing surface-reaction layers formed on nonpatterned poly-Si and SiO2 samples and gate-patterned samples with a gate width of 32 nm. The samples were etched by using an HBr/O2/Ar/CH4 gas chemistry and varying the duty cycle of the pulsed microwave. The reaction layers, which were revealed as a hydrocarbon layer on a SiBrxOy layer, were analyzed by X-ray photoelectron spectroscopy. The upper layer was a hydrocarbon layer, which protected SiO2 from ion bombardment and also prevented Br flux from being supplied to the SiO2. The lower layer was a SiBrxOy layer, which suppressed the etching of the underlying Si substrate. The formation of the hydrocarbon layer was controlled by the duty cycle of the microwave plasma. Etch stop, which occurred at a low peak-to-peak voltage (wafer bias) of the continuous microwave plasma, was prevented by controlling the thickness of the hydrocarbon layer in the pulsed-microwave plasma. Gate-oxide punch-through, which occurred at a high peak-to-peak voltage of wafer bias in the case of the continuous microwave plasma, was also prevented in the case of the pulsed microwave plasma by forming reaction layers with high C/Br ratio.

  4. Microwave Plasma Hydrogen Recovery System

    NASA Technical Reports Server (NTRS)

    Atwater, James; Wheeler, Richard, Jr.; Dahl, Roger; Hadley, Neal

    2010-01-01

    A microwave plasma reactor was developed for the recovery of hydrogen contained within waste methane produced by Carbon Dioxide Reduction Assembly (CRA), which reclaims oxygen from CO2. Since half of the H2 reductant used by the CRA is lost as CH4, the ability to reclaim this valuable resource will simplify supply logistics for longterm manned missions. Microwave plasmas provide an extreme thermal environment within a very small and precisely controlled region of space, resulting in very high energy densities at low overall power, and thus can drive high-temperature reactions using equipment that is smaller, lighter, and less power-consuming than traditional fixed-bed and fluidized-bed catalytic reactors. The high energy density provides an economical means to conduct endothermic reactions that become thermodynamically favorable only at very high temperatures. Microwave plasma methods were developed for the effective recovery of H2 using two primary reaction schemes: (1) methane pyrolysis to H2 and solid-phase carbon, and (2) methane oligomerization to H2 and acetylene. While the carbon problem is substantially reduced using plasma methods, it is not completely eliminated. For this reason, advanced methods were developed to promote CH4 oligomerization, which recovers a maximum of 75 percent of the H2 content of methane in a single reactor pass, and virtually eliminates the carbon problem. These methods were embodied in a prototype H2 recovery system capable of sustained high-efficiency operation. NASA can incorporate the innovation into flight hardware systems for deployment in support of future long-duration exploration objectives such as a Space Station retrofit, Lunar outpost, Mars transit, or Mars base. The primary application will be for the recovery of hydrogen lost in the Sabatier process for CO2 reduction to produce water in Exploration Life Support systems. Secondarily, this process may also be used in conjunction with a Sabatier reactor employed to

  5. Hydrogen Plasma Processing of Iron Ore

    NASA Astrophysics Data System (ADS)

    Sabat, Kali Charan; Murphy, Anthony B.

    2017-03-01

    Iron is currently produced by carbothermic reduction of oxide ores. This is a multiple-stage process that requires large-scale equipment and high capital investment, and produces large amounts of CO2. An alternative to carbothermic reduction is reduction using a hydrogen plasma, which comprises vibrationally excited molecular, atomic, and ionic states of hydrogen, all of which can reduce iron oxides, even at low temperatures. Besides the thermodynamic and kinetic advantages of a hydrogen plasma, the byproduct of the reaction is water, which does not pose any environmental problems. A review of the theory and practice of iron ore reduction using a hydrogen plasma is presented. The thermodynamic and kinetic aspects are considered, with molecular, atomic and ionic hydrogen considered separately. The importance of vibrationally excited hydrogen molecules in overcoming the activation energy barriers, and in transferring energy to the iron oxide, is emphasized. Both thermal and nonthermal plasmas are considered. The thermophysical properties of hydrogen and argon-hydrogen plasmas are discussed, and their influence on the constriction and flow in the of arc plasmas is considered. The published R&D on hydrogen plasma reduction of iron oxide is reviewed, with both the reduction of molten iron ore and in-flight reduction of iron ore particles being considered. Finally, the technical and economic feasibility of the process are discussed. It is shown that hydrogen plasma processing requires less energy than carbothermic reduction, mainly because pelletization, sintering, and cokemaking are not required. Moreover, the formation of the greenhouse gas CO2 as a byproduct is avoided. In-flight reduction has the potential for a throughput at least equivalent to the blast furnace process. It is concluded that hydrogen plasma reduction of iron ore is a potentially attractive alternative to standard methods.

  6. Effects of hydrogen addition and growth-etch cycling on the oxy-acetylene torch deposition of homoepitaxial diamond

    NASA Astrophysics Data System (ADS)

    Weimer, R. A.; Thorpe, T. P.; Snail, K. A.; Merzbacher, C. E.

    1995-09-01

    Homoepitaxial diamond films were deposited onto (110) single crystal substrates using oxy-acetylene torch deposition at a constant substrate temperature of 1150 °C. Growth-etch cycling of the deposition increased the linear growth rates of the (100) and (111) faces by a factor of 2. The growth-etch films were shown to be less transparent in the infrared than the reference depositions as determined by microfocus Fourier transform infrared spectroscopy. Using the growth-etch technique, the growth rates of the (100), (111), and (110) faces decreased with increasing hydrogen addition to the combustion flame for hydrogen flow rates up to 50% of the acetylene flow rate. The additional hydrogen did not improve the growth-etch films' transparency.

  7. High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

    NASA Astrophysics Data System (ADS)

    Stamate, E.; Draghici, M.

    2012-04-01

    A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 × 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F-. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O2 mixtures was almost similar with that by positive ions reaching 700 nm/min.

  8. Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

    NASA Astrophysics Data System (ADS)

    Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

    2017-04-01

    Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

  9. Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

  10. High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

    NASA Astrophysics Data System (ADS)

    Song, Junqiang; Shi, Xun; Chen, Lidong

    2014-10-01

    Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

  11. Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3

    NASA Astrophysics Data System (ADS)

    Zhang, Liheng; Verma, Amit; (Grace Xing, Huili; Jena, Debdeep

    2017-03-01

    Dry etching behavior of unintentionally-doped (\\bar{2}01) β-Ga2O3 has been studied in a BCl3/Ar chemistry using inductively-coupled-plasma reactive ion etching (ICP-RIE). The effects of various etch parameters like ICP and RIE powers, BCl3/Ar gas ratio and chamber pressure on etch rate are studied systematically. Higher ICP, RIE powers and lower pressure conditions are found to enhance the etch rate. A synergic etching mechanism between chemical and physical components is proposed and used to obtain fast Ga2O3 etch rates more than 160 nm/min, nearly-vertical sidewalls and smooth etched surfaces. The findings of this work will enable Ga2O3 vertical devices for power electronics.

  12. Hydrogen content in titanium and a titanium-zirconium alloy after acid etching.

    PubMed

    Frank, Matthias J; Walter, Martin S; Lyngstadaas, S Petter; Wintermantel, Erich; Haugen, Håvard J

    2013-04-01

    Dental implant alloys made from titanium and zirconium are known for their high mechanical strength, fracture toughness and corrosion resistance in comparison with commercially pure titanium. The aim of the study was to investigate possible differences in the surface chemistry and/or surface topography of titanium and titanium-zirconium surfaces after sand blasting and acid etching. The two surfaces were compared by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, scanning electron microscopy and profilometry. The 1.9 times greater surface hydrogen concentration of titanium zirconium compared to titanium was found to be the major difference between the two materials. Zirconium appeared to enhance hydride formation on titanium alloys when etched in acid. Surface topography revealed significant differences on the micro and nanoscale. Surface roughness was increased significantly (p<0.01) on the titanium-zirconium alloy. High-resolution images showed nanostructures only present on titanium zirconium.

  13. Optimization of plasma deposition and etching processes for commercial multicrystalline silicon solar cells

    SciTech Connect

    Ruby, D.S.; Wilbanks, W.L.; Fleddermann, C.B.; Rosenblum, M.D.; Roncin, S.; Narayanan, S.

    1996-06-01

    The authors conducted an investigation of plasma deposition and etching processes on full-size multicrystalline (mc-Si) cells processed in commercial production lines, so that any improvements obtained will be immediately relevant to the PV industry. In one case, the authors performed a statistically designed multiparameter experiment to determine the optimum PECVD-nitride deposition conditions specific to EFG silicon from ASE Americas, Inc. In a related effort, they studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on mc-Si cells from Solarex Corp. Initial results found a statistically significant improvement of about half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with the PECVD-nitride surface passivation treatment. Additional improvement is expected when the successful bulk passivation treatment is also added to the process.

  14. Measurement of desorbed products during organic polymer thin film etching by plasma beam irradiation

    SciTech Connect

    Kurihara, Kazuaki; Karahashi, Kazuhiro; Egami, Akihiro; Nakamura, Moritaka

    2006-11-15

    The authors investigated the etching characteristics of three kinds of methacrylate polymer films, which have the same main chain but with different side chains, using a plasma beam irradiation apparatus. The polymers are polytbutylmethacrylate, polybenzylmethacrylate, and polycyclohexylmethacrylate. The major desorbed products during nitrogen plasma beam etching were found to be HCN and C{sub 2}N{sub 2} for all methacrylate polymer films. The desorbed products originating from the polymer structure, namely, the main chain and the side chain, were hardly observed. The energy distributions of desorbed products were mainly composed of Maxwell-Boltzmann distribution with a small component of collision cascade distribution for all three polymers and were slightly dependent on the ion energy. It is concluded that chemical sputtering, which can be defined as the production of weakly bound species by ion bombardment, followed by thermal desorption, is the significant ion induced mechanism of organic polymer etching.

  15. Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

    SciTech Connect

    Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

    2012-09-15

    The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate bias reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl{sub x} (x = 1 - 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex 'recycling' process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl{sub 3} sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.

  16. Plasma chemical modification of track-etched membrane surface layer for improvement of their biomedical properties

    NASA Astrophysics Data System (ADS)

    Kravets, Liubov I.; Ryazantseva, Tatyana V.

    2013-12-01

    The morphological and clinical studies of poly(ethylene terephthalate) track-etched membrane modified by plasma of non-polymerizing gases as drainage materials for antiglaucomatous operations were performed. It was demonstrated their compatibility with eye tissues. Moreover, it was shown that a new drainage has a good lasting hypotensive effect and can be used as operation for refractory glaucoma surgery.

  17. Anisotropic etching of amorphous perfluoropolymer films in oxygen-based inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Ono, Takao; Akagi, Takanori; Ichiki, Takanori

    2009-01-01

    An amorphous perfluoropolymer, "Cytop™" (Asahi Glass Co., Ltd.), is a preferable material for the fabrication of micro total analysis system devices because of its superior optical transparency over a wide wavelength range and low refractive index of 1.34, which is almost the same as that of water, as well as excellent chemical stability. To establish the precise microfabrication technology for this unique resin, the dry etching of the amorphous perfluoropolymer in Ar/O2 low-pressure inductively coupled plasma has been studied. A relatively high etch rate of approximately 6.3 μm/min at maximum and highly anisotropic etched features was attained. Plasma measurements by a single Langmuir probe technique and actinometry revealed that etching is dominated by ion-assisted surface desorption above a 10% O2 mixing ratio, whereas the supply of active oxygen species is the rate-limiting process below 10%. Moreover, angled x-ray photoelectron spectroscopy measurements of an etched trench pattern revealed that a high anisotropy is attributed to the formation of a carbon-rich sidewall protection layer.

  18. Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge

    SciTech Connect

    Sung, Dougyong; Woo, Jehun; Lim, Kyungchun; Kim, Kyungsun; Volynets, Vladimir; Kim, Gon-Ho

    2009-07-15

    The influence of controlled phase shift between very high frequency (100 MHz) voltages applied to the powered electrodes on the plasma uniformity and etch rate was studied in a capacitive triode-type reactor. Radial profiles of plasma optical emission were measured as a function of the phase shift in process (C{sub 4}F{sub 8}/O{sub 2}/Ar) plasma with the low frequency bias power both turned off and on. Radial profiles of KrF photoresist etch rate over a 300 mm wafer were obtained in the same conditions (with the bias power turned on). Besides, plasma density at the wafer center and edge was measured versus the phase shift in pure Ar plasma. It occurred that all measured characteristics strongly depend on the phase shift and correlate with each other. It has been shown that the phase-shift control can considerably improve both the plasma and etch-rate uniformity in very high-frequency capacitive reactors.

  19. Two-dimensional simulation of polysilicon etching with chlorine in a high density plasma reactor

    SciTech Connect

    Lymberopoulos, D.P.; Economou, D.J.

    1995-08-01

    A two-dimensional fluid simulation of polysilicon etching with chlorine in an inductively-coupled high density plasma source is presented. A modular approach was used to couple in a self-consistent manner the disparate time scales of plasma and neutral species transport. This way, complex plasma chemical reactions (involving electrons, ions and neutrals) as well as surface chemistry can be included in the simulation. The power deposited into the plasma was calculated by an electromagnetics module which solves Maxwell`s equations. The power deposition was used in the electron energy module to find the electron temperature and the rate coefficients of electron-impact reactions. These were in turn used as source terms in separate neutral and charged species transport modules. By iterating among the modules, a self-consistent solution was obtained. Quantities of interest, such as power deposition, species density and flux, and etch rate and uniformity were thus calculated. As power deposition was increased, the electron density increased linearly, the plasma became less electronegative, the degree of gas dissociation increased, and the plasma potential remained constant. The radial uniformity of the Cl atom flux was better than that of the ion flux. The reactivity of the wafer as compared to that of the surrounding electrode surface significantly affected the etch uniformity, despite the low pressure of 10 mTorr.

  20. Controlling the relative rates of adlayer formation and removal during etching in inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Fuller, Nicholas Colvin Masi

    Laser desorption (LD) of the adlayer coupled with laser induced fluorescence (LIF) and plasma induced emission (PIE) of desorbed adsorbates is used to investigate the relative rates of chlorination and sputtering during the etching of Si in inductively coupled Cl2-Ar plasmas. Such an analysis is a two-fold process: surface analysis and plasma characterization. Surface analysis of Si etching using LD-LIF and LD-PIE techniques combined with etch rate measurements have revealed that the coverage of SiCl2 and etch rate increases and coverage of Si decreases abruptly for a chlorine fraction of 75% and ion energy of 80 eV. The precise Cl2 fraction for which these abrupt changes occur increases with an increase in ion energy. These changes may be caused by local chemisorption-induced reconstruction of Si <100>. Furthermore, the chlorination and sputtering rates are increased by ˜ an order of magnitude as the plasma is changed from Ar-dominant to Cl-dominant. Characterization of the plasma included determination of the dominant ion in Cl2 plasmas using LIF and a Langmuir probe and measurement of the absolute densities of Cl2, Cl, Cl+, and At + in Cl2-Ar discharges using optical emission actinometry. These studies reveal that Cl+ is the dominant positive ion in the H-mode and the dissociation of Cl2 to Cl increases with an increase in Ar fraction due to an increase in electron temperature. Furthermore, for powers exceeding 600 W, the neutral to ion flux ratio is strongly dependent on Cl2 fraction and is attributed mostly to the decrease in Cl density. Such dependence of the flux ratio on Cl2 fraction is significant in controlling chlorination and sputtering rates not only for Si etching, but for etching other key technological materials. ICP O2 discharges were also studied for low-kappa polymeric etch applications. These studies reveal that the electron temperature is weakly dependent on rf power and O2 dissociation is low (˜2%) at the maximum rf power density of 5.7 Wcm

  1. Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor

    NASA Astrophysics Data System (ADS)

    Luan, P.; Knoll, A. J.; Wang, H.; Kondeti, V. S. S. K.; Bruggeman, P. J.; Oehrlein, G. S.

    2017-01-01

    The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O2 and 1% air plasma and OH for Ar/1% H2O plasma, play an essential role for polymer etching. For O2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzle-surface distance increases. The etching reaction probability of an O atom ranging from 10-4 to 10-3 is consistent with low pressure plasma research. We also find that adding O2 and H2O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O2/H2O plasma.

  2. Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl2 plasmas and potential applications in plasma etching

    NASA Astrophysics Data System (ADS)

    Tian, Peng; Kushner, Mark J.

    2017-02-01

    UV/VUV photon fluxes in plasma materials processing have a variety of effects ranging from producing damage to stimulating synergistic reactions. Although in plasma etching processes, the rate and quality of the feature are typically controlled by the characteristics of the ion flux, to truly optimize these ion and photon driven processes, it is desirable to control the relative fluxes of ions and photons to the wafer. In prior works, it was determined that the ratio of VUV photon to ion fluxes to the substrate in low pressure inductively coupled plasmas (ICPs) sustained in rare gases can be controlled by combinations of pressure and pulse power, while the spectrum of these VUV photons can be tuned by adding additional rare gases to the plasma. In this work, VUV photon and ion fluxes are computationally investigated for Ar/Cl2 ICPs as used in etching of silicon. We found that while the overall ratio of VUV photon flux to ion flux are controlled by pressure and pulse power, by varying the fraction of Cl2 in the mixture, both the ratio of VUV to ion fluxes and the spectrum of VUV photons can be tuned. It was also found that the intensity of VUV emission from Cl(3p 44s) can be independently tuned by controlling wall surface conditions. With this ability to control ratios of ion to photon fluxes, photon stimulated processes, as observed in halogen etching of Si, can be tuned to optimize the shape of the etched features.

  3. Tailoring particle arrays by isotropic plasma etching: an approach towards percolated perpendicular media.

    PubMed

    Brombacher, Christoph; Saitner, Marc; Pfahler, Christian; Plettl, Alfred; Ziemann, Paul; Makarov, Denys; Assmann, Daniel; Siekman, Martin H; Abelmann, Leon; Albrecht, Manfred

    2009-03-11

    Plasma etching of densely packed arrays of polystyrene particles leads to arrays of spherical nanostructures with adjustable diameters while keeping the periodicity fixed. A linear dependence between diameter of the particles and etching time was observed for particles down to sizes of sub-50 nm. Subsequent deposition of Co/Pt multilayers with perpendicular magnetic anisotropy onto these patterns leads to an exchange-decoupled, single-domain magnetic nanostructure array surrounded by a continuous magnetic film. The magnetic reversal characteristic of the film-particle system is dominated by domain nucleation and domain wall pinning at the particle locations, creating a percolated perpendicular media system.

  4. Sputter-Etching Characteristics of BST and SBT using a Surface-Wave High-Density Plasma Reactor.

    NASA Astrophysics Data System (ADS)

    Stafford, L.; Margot, J.; Delprat, S.; Chaker, M.; Queney, D.

    2001-10-01

    In the context of the integration of ferroelectric capacitors such as FeRAMs and DRAMs, the dry etching of pulse laser deposited barium-strontium-titanate (BST) and bismuth-strontium-tantalate (SBT) is investigated using a non-reactive surface-wave high-density argon magnetoplasma. The etching characteristics of rf-biased thin films are evaluated as a function of the self-bias voltage, the magnetic field intensity and the gas pressure. It is found that high etch rates with a good selectivity over resist can be achieved without any plasma chemistry provided the plasma is operated in the mtorr regime. For BST, etch rates as high as 1000 Åmin with a selectivity of 0.6 over HPR504 photoresist are obtained for self-bias voltages lower than 150 V. Both BST and SBT present similar sputter-etching characteristics, SBT being however etched faster then BST.

  5. Plasma heating power dissipation in low temperature hydrogen plasmas

    SciTech Connect

    Komppula, J. Tarvainen, O.

    2015-10-15

    A theoretical framework for power dissipation in low temperature plasmas in corona equilibrium is developed. The framework is based on fundamental conservation laws and reaction cross sections and is only weakly sensitive to plasma parameters, e.g., electron temperature and density. The theory is applied to low temperature atomic and molecular hydrogen laboratory plasmas for which the plasma heating power dissipation to photon emission, ionization, and chemical potential is calculated. The calculated photon emission is compared to recent experimental results.

  6. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    NASA Astrophysics Data System (ADS)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  7. In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

    SciTech Connect

    Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark; Aydil, Eray S.

    2006-11-15

    The authors propose and demonstrate a technique to determine the ion incidence angle dependence of the ion-enhanced etching yield under realistic plasma conditions and in situ in an arbitrary plasma reactor. The technique is based on measuring the etch rate as a function of position along the walls of features that initially have nearly semicircular cross sections. These initial feature shapes can be easily obtained by wet or isotropic plasma etching of holes patterned through a mask. The etch rate as a function of distance along the feature profile provides the etching yield as a function of the ion incidence angle. The etch rates are measured by comparing digitized scanning electron micrograph cross sections of the features before and after plasma etching in gas mixtures of interest. The authors have applied this technique to measure the ion incidence angle dependence of the Si etching yield in HBr, Cl{sub 2}, SF{sub 6}, and NF{sub 3} plasmas and binary mixtures of SF{sub 6} and NF{sub 3} with O{sub 2}. Advantages and limitations of this method are also discussed.

  8. Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2014-05-01

    Classical molecular dynamics (MD) simulations have been performed for SiClx+ (x = 0-4) ions incident on Si(100) surfaces, using an improved Stillinger-Weber (SW) potential form, to understand the surface reaction kinetics of etch byproduct ion incidence during Si etching in Cl-based plasmas. The ions were normally incident on surfaces with translational energies in the range of Ei = 20-500 eV, and the surface reaction kinetics of Clx+ (x = 1, 2) ion incidence were also simulated for reference. The etch yields and thresholds presently simulated were in agreement with the experimental results previously reported for the respective ion beam incidences on Si. Numerical results indicated that the etch yields y* per halogen (or per constituent Cl atom of incident ions), thresholds, surface coverages of Cl atoms adsorbed, and thicknesses of chlorinated surface layers are almost the same, when compared at the same translational energy e_{\\text{i}}^{*} per halogen; moreover, the stoichiometries of product species desorbed, stoichiometries of chlorinated surface layers, and their depth profiles are also similar when compared at the same e_{\\text{i}}^{*}. Thus, it follows that the etching characteristics for SiClx+ as well as Clx+ incidences on Si are determined primarily or scaled universally by e_{\\text{i}}^{*}, unless the deposition is significant at low Ei or e_{\\text{i}}^{*} for SiCl+ and SiCl2+.

  9. Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

    NASA Technical Reports Server (NTRS)

    Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

    2002-01-01

    Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

  10. Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off

    NASA Astrophysics Data System (ADS)

    Rastogi, Vinayak; Beique, Genevieve; Sun, Lei; Cottle, Hongyun; Feurprier, Yannick; Metz, Andrew; Kumar, Kaushik; Labelle, Cathy; Arnold, John; Colburn, Matthew; Ranjan, Alok

    2016-03-01

    EUV based patterning is one of the frontrunner candidates enabling scaling for future technology nodes. However it poses the common challenges of `pattern roughness' and `etch resistance' aspect which are getting even more critical as we work on smaller dimension features. Continuous efforts are ongoing to improve resist materials and lithography process but the industry is slowly moving to introduce it at high volume manufacturing. Plasma Etch processes have the potential to improvise upon the incoming pattern roughness and provide improved LER/LWR downstream to expedite EUV progress. In this work we demonstrate the specific role of passivation control in the dualfrequency Capacitively Coupled Plasma (CCP) for EUV patterning process with regards to improving LER/LWR, resist selectivity and CD tunability for line/space patterns. We draw the implicit commonalities between different passivation chemistry and their effectiveness for roughness improvement. The effect of relative C:F and C:H ratio in feed gas on CFx and CHx plasma species and in turn the evolution of pattern roughness is drawn. Data that shows the role of plasma etch parameters impacting the key patterning metrics of CD, resist selectivity and LER/LWR is presented.

  11. Large scale, highly dense nanoholes on metal surfaces by underwater laser assisted hydrogen etching near nanocrystalline boundary

    NASA Astrophysics Data System (ADS)

    Lin, Dong; Zhang, Martin Yi; Ye, Chang; Liu, Zhikun; Liu, C. Richard; Cheng, Gary J.

    2012-03-01

    A new method to generate large scale and highly dense nanoholes is presented in this paper. By the pulsed laser irradiation under water, the hydrogen etching is introduced to form high density nanoholes on the surfaces of AISI 4140 steel and Ti. In order to achieve higher nanohole density, laser shock peening (LSP) followed by recrystallization is used for grain refinement. It is found that the nanohole density does not increase until recrystallization of the substructures after laser shock peening. The mechanism of nanohole generation is studied in detail. This method can be also applied to generate nanoholes on other materials with hydrogen etching effect.

  12. Thermodynamic properties of hydrogen-helium plasmas.

    NASA Technical Reports Server (NTRS)

    Nelson, H. F.

    1972-01-01

    Calculation of the thermodynamic properties of an atomic hydrogen-helium plasma for postulated conditions present in a stagnation shock layer of a spacecraft entering the atmosphere of Jupiter. These properties can be used to evaluate transport properties, to calculate convective heating, and to investigate nonequilibrium behavior. The calculations have been made for temperatures from 10,000 to 100,000 K, densities of 10 to the minus 7th and .00001 g cu cm, and three plasma compositions: pure hydrogen, 50% hydrogen/50% helium, and pure helium. The shock layer plasma consists of electrons, protons, atomic hydrogen, atomic helium, singly ionized helium, and doubly atomized helium. The thermodynamic properties which have been investigated are: pressure, average molecular weight, internal energy, enthalpy, entropy, specific heat, and isentropic speed of sound. A consistent model was used for the reduction of the ionization potential in the calculation of the partition functions.

  13. Optical monitoring of surface adlayers by laser-induced thermal desorption during the plasma etching of semiconductors

    NASA Astrophysics Data System (ADS)

    Choe, Jae Young

    1999-11-01

    Laser induced thermal desorption with optical detection by laser induced fluorescence and transient plasma induced emission is used to analyze the surface adlayer during plasma etching of semiconductors, including Si, Ge, and InP. In the investigation of Si etching in a Cl2 inductively coupled plasma (ICP), 308 nm radiation from a XeCl excimer laser heats the surface to desorb the surface species (LD) and excites laser induced fluorescence (LIF) in the desorbing SiCl. This measured LD-LIF optical signal indicates the adlayer chlorine content during steady-state plasma etching. The LD-LIF of SiCl increases with dc substrate bias voltage indicating that the adlayer chlorine content increases with increasing substrate bias. The SiCl LD-LIF signal is almost independent of rf power, while the ion density and etch rate increase by an order of magnitude over the range of rf power studied. In the investigation of Ge etching in a Cl2 ICP, 308 nm radiation from a XeCl excimer laser is used for LD-LIF of GeCl. The LD-LIF of GeCl is also independent of rf power, as for Si etching, but the rate of chlorination is faster than that during Si etching. The GeCl LD-LIF signal remains almost constant as dc substrate bias is increased from 0 V to over -100 V. The transient increase in plasma-induced emission following laser-induced thermal desorption (LD-PIE) is also used to analyze the surface adlayer during Si and InP etching by a Cl2 plasma. Several different species are monitored during Si etching by a Cl2 plasma, including Si, SiCl and SiCl2. The LD-PIE intensities from all of these species increase with rf power. In order to properly interpret the LD-PIE signal to determine the level of surface chlorination, the LD-PIE signal is normalized by the electron density. The LD-PIE intensities during Si etching increase with the dc substrate bias as in the LD-LIF study. Both the LD-LIF and LD-PIE measurements of Si etching are consistent with each other for determining the adlayer

  14. Thermal Atomic Layer Etching of SiO2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride.

    PubMed

    DuMont, Jaime W; Marquardt, Amy E; Cano, Austin M; George, Steven M

    2017-03-22

    The thermal atomic layer etching (ALE) of SiO2 was performed using sequential reactions of trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300 °C. Ex situ X-ray reflectivity (XRR) measurements revealed that the etch rate during SiO2 ALE was dependent on reactant pressure. SiO2 etch rates of 0.027, 0.15, 0.20, and 0.31 Å/cycle were observed at static reactant pressures of 0.1, 0.5, 1.0, and 4.0 Torr, respectively. Ex situ spectroscopic ellipsometry (SE) measurements were in agreement with these etch rates versus reactant pressure. In situ Fourier transform infrared (FTIR) spectroscopy investigations also observed SiO2 etching that was dependent on the static reactant pressures. The FTIR studies showed that the TMA and HF reactions displayed self-limiting behavior at the various reactant pressures. In addition, the FTIR spectra revealed that an Al2O3/aluminosilicate intermediate was present after the TMA exposures. The Al2O3/aluminosilicate intermediate is consistent with a "conversion-etch" mechanism where SiO2 is converted by TMA to Al2O3, aluminosilicates, and reduced silicon species following a family of reactions represented by 3SiO2 + 4Al(CH3)3 → 2Al2O3 + 3Si(CH3)4. Ex situ X-ray photoelectron spectroscopy (XPS) studies confirmed the reduction of silicon species after TMA exposures. Following the conversion reactions, HF can fluorinate the Al2O3 and aluminosilicates to species such as AlF3 and SiOxFy. Subsequently, TMA can remove the AlF3 and SiOxFy species by ligand-exchange transmetalation reactions and then convert additional SiO2 to Al2O3. The pressure-dependent conversion reaction of SiO2 to Al2O3 and aluminosilicates by TMA is critical for thermal SiO2 ALE. The "conversion-etch" mechanism may also provide pathways for additional materials to be etched using thermal ALE.

  15. Etching and structure transformations in uncured epoxy resin under rf-plasma and plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Kondyurin, Alexey; Bilek, Marcela

    2010-05-01

    Uncured epoxy resin was spun onto silicon wafer and treated by plasma and plasma immersion ion implantation (PIII) by argon ions with energy up to 20 keV. Ellipsometry, FTIR spectroscopy and optical microscopy methods were used for analysis. The etching, carbonization, oxidation and crosslinking effects were observed. The curing reactions in modified epoxy resin are observed without a hardening agent. A model of structural transformations in epoxy resin under plasma and ion beam irradiation is proposed and discussed in relation to processes in a space environment.

  16. Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications

    NASA Astrophysics Data System (ADS)

    Gul, Banat; Ahmad, Iftikhar; Zia, Gulfam; Aman-ur-Rehman

    2016-09-01

    HBr/Cl2 plasma discharge is investigated to study the etchant chemistry of this discharge by using the self-consistent fluid model. A comprehensive set of gas phase reactions (83 reactions) including primary processes such as excitation, dissociation, and ionization are considered in the model along with 24 species. Our findings illustrate that the densities of neutral species (i.e., Br, HCl, Cl, H, and H2) produced in the reactor are higher than charged species (i.e., Cl2+, Cl-, HBr+, and Cl+). Density profile of neutral and charged species followed bell shaped and double humped distributions, respectively. Increasing Cl2 fraction in the feedback gases (HBr/Cl2 from 90/10 to 10/90) promoted the production of Cl, Cl+, and Cl2+ in the plasma, indicating that chemical etching pathway may be preferred at high Cl-environment. These findings pave the way towards controlling/optimizing the Si-etching process.

  17. Hydrogen ionic plasma generated using Al plasma grid

    NASA Astrophysics Data System (ADS)

    Oohara, W.; Anegawa, N.; Egawa, M.; Kawata, K.; Kamikawa, T.

    2016-08-01

    Negative hydrogen ions are produced in the apertures of a plasma grid made of aluminum under the irradiation of positive ions, generating an ionic plasma consisting of positive and negative ions. The saturation current ratio obtained using a Langmuir probe reflects the existence ratio of electrons and is found to increase in connection with the diffusion of the ionic plasma. The local increment of the current ratio suggests the collapse of negative ions and the replacement of detached electrons.

  18. Tailoring the properties of asymmetric cellulose acetate membranes by gas plasma etching.

    PubMed

    Olde Riekerink, M B; Engbers, G H M; Wessling, M; Feijen, J

    2002-01-15

    Cellulose triacetate (CTA) ultrafilters and cellulose acetate blend (CAB) desalination membranes were treated with a radiofrequency gas plasma (tetrafluoromethane (CF(4)) or carbon dioxide (CO(2)), 47-49 W, 0.04-0.08 mbar). Treatment times were varied between 15 s and 120 min. The plasma-treated top layer of the membranes was characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, and contact angle measurements to obtain information about surface structure, chemistry, and wettability, respectively. The membrane properties (e.g., permeability, selectivity, fouling) were studied by waterflux measurements, molecular weight cutoff measurements, and fouling experiments with bovine serum albumin. CO(2) plasma treatment resulted in gradual etching of the membrane's dense top layer. Permeation and selectivity changed significantly for treatment times of 0-15 min for CTA and 5-60 min for CAB membranes. Moreover, CTA membranes were hydrophilized during CO(2) plasma treatment whereas CF(4) plasma treatment led to hydrophobic surfaces due to strong fluorination of the top layer. This study shows that gas plasma etching can tailor the properties of asymmetric cellulose acetate membranes by simultaneously modifying the chemistry and structure of the top layer. The low fouling properties of CTA membranes were thereby largely maintained.

  19. The chemistry screening for ultra low-k dielectrics plasma etching

    NASA Astrophysics Data System (ADS)

    Zotovich, A.; Krishtab, M.; Lazzarino, F.; Baklanov, M. R.

    2014-12-01

    Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k<2.5 and based on mixture of C4F8 and CF4 with N2, O2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF4 with CH2F2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM.

  20. Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching

    SciTech Connect

    Kokkoris, George; Boudouvis, Andreas G.; Gogolides, Evangelos

    2006-11-15

    An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for the case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear or nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied in SiO{sub 2} etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO{sub 2} holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated.

  1. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    DOE PAGES

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects ofmore » small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

  2. Plasma Etching Effects on the Transport in Topological Insulator Bi2Te3 Nanoplates

    NASA Astrophysics Data System (ADS)

    Sucharitakul, Sukrit; Goble, Nicholas; Wang, Zhenhua; Zhang, Zhidong; Gao, Xuan

    2014-03-01

    Carrier transport in various topological insulators (TIs) such as Bi2Se3andBi2Te3 exhibits a novel linear magneto-resistance (LMR) [1] in addition to the more extensively studied weak anti-localization effect. The robustness against raising temperature and 2D nature of this LMR [1] allude to its connection with the topologically protected 2D surface transport in TI. In this work, we study how the plasma etching induced surface roughness or corrugation impacts the transport in TI Bi2Te3 nanoplates, to understand how the topological surface transport responds to controlled perturbation to material surface. Bi2Te3 nanoplates with varied thickness were grown using CVD method and hall bar devices were studied under different Argon plasma etching conditions. Our experiments show that plasma etching induces drastic change in the Hall coefficient but has relatively weak effect on the LMR. We will also discuss the data analyzed by the two band carrier m! a ngo-transport model which allows quantitative separation of the surface carrier concentration and mobility from the bulk carriers. Z.H.W. acknowledges China Scholarship Council. Z.D.Z. acknowledges the NSF China for Grant No. 51331006. X.P.A.G. acknowledges NSF CAREER Award (DMR-1151534), AFOSR (FA9550-12-1-0441) and Lee Hsun Young Scientist Award, IMR and CAS for support.

  3. Etching of Niobium in an Argon-Chlorine Capacitively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Radovanov, Svetlana; Samolov, Ana; Upadhyay, Janardan; Peshl, Jeremy; Popovic, Svetozar; Vuskovic, Leposava; Applied Materials, Varian Semiconductor Team; Old Dominion University Team

    2016-09-01

    Ion assisted etching of the inner surfaces of Nb superconducting radio frequency (SRF) cavities requires control of incident ion energies and fluxes to achieve the desired etch rate and smooth surfaces. In this paper, we combine numerical simulation and experiment to investigate Ar /Cl2 capacitively coupled plasma (CCP) in cylindrical reactor geometry. Plasma simulations were done in the CRTRS 2D/3D code that self-consistently solves for CCP power deposition and electrostatic potential. The experimental results are used in combination with simulation predictions to understand the dependence of plasma parameters on the operating conditions. Using the model we were able to determine the ion current and flux at the Nb substrate. Our simulations indicate the relative importance of the current voltage phase shift and displacement current at different pressures and powers. For simulation and the experiment we have used a test structure with a pillbox cavity filled with niobium ring-type samples. The etch rate of these samples was measured. The probe measurements were combined with optical emission spectroscopy in pure Ar for validation of the model. The authors acknowledge Dr Shahid Rauf for developing the CRTRS code. Support DE-SC0014397.

  4. Comparative study of CF4- and CHF3-based plasmas for dry etching applications

    NASA Astrophysics Data System (ADS)

    Efremov, A.; Kwon, K.-H.; Morgunov, A.; Shabadarova, D.

    2016-12-01

    The influence of O2/Ar mixing ratio on plasma characteristics, densities and fluxes of active species determining the dry etching kinetics in both CF4/O2/Ar and CHF3/O2/Ar plasmas was studied. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of O2 for Ar at constant fraction of CF4 or CHF3 in a feed gas noticeably changes electron temperature and electron density, but does not result in the non-monotonic behavior of F atom density. The differences between two gas systems were discussed in details from the point of view of plasma chemistry.

  5. In situ observation of atomic hydrogen etching on diamond-like carbon films produced by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Cheng, C.-L.; Chia, C.-T.; Chiu, C.-C.; Wu, C.-C.; Cheng, H.-F.; Lin, I.-N.

    2001-04-01

    Atomic hydrogen etching on the pulsed laser deposited (PLD) diamond-like carbon (DLC) films were examined in situ by using Raman spectroscopy. Thermal annealing of the as-prepared DLC films was found to alter the D-band (˜1355 cm -1) and G-band (˜1582 cm -1) from unresolved features at room temperature to clearly separated bands at above 500°C, indicating graphitization of the films. The presence of atomic hydrogen retards graphitization at temperatures lower than 500°C, presumably because reactive atomic hydrogen formed sp 3-bonding carbons which prevented graphitization at below 500°C, while at above 500°C, the hydrogen etches away disordered structure of the DLC film as the intensity changes of the D-bands demonstrate.

  6. 200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

    SciTech Connect

    Kubota, Tomohiro; Nukaga, Osamu; Ueki, Shinji; Sugiyama, Masakazu; Inamoto, Yoshimasa; Ohtake, Hiroto; Samukawa, Seiji

    2010-09-15

    The authors developed a neutral beam source consisting of a 200-mm-diameter inductively coupled plasma etcher and a graphite neutralization aperture plate based on the design of a neutral beam source that Samukawa et al. [Jpn. J. Appl. Phys., Part 2 40, L779 (2001)] developed. They measured flux and energy of neutral particles, ions, and photons using a silicon wafer with a thermocouple and a Faraday cup and calculated the neutralization efficiency. An Ar neutral beam flux of more than 1 mA/cm{sup 2} in equivalent current density and a neutralization efficiency of more than 99% were obtained. The spatial uniformity of the neutral beam flux was within {+-}6% within a 100 mm diameter. Silicon etching using a F{sub 2}-based neutral beam was done at an etch rate of about 47 nm/min, while Cl{sub 2}-based neutral beam realized completely no undercut. The uniformity of etch rate was less than {+-}5% within the area. The etch rate increased by applying bias power to the neutralization aperture plate, which shows that accelerated neutral beam was successfully obtained. These results indicate that the neutral beam source is scalable, making it possible to obtain a large-diameter and uniform neutral beam, which is inevitable for application to mass production.

  7. Prediction of silicon oxynitride plasma etching using a generalized regression neural network

    NASA Astrophysics Data System (ADS)

    Kim, Byungwhan; Lee, Byung Teak

    2005-08-01

    A prediction model of silicon oxynitride (SiON) etching was constructed using a neural network. Model prediction performance was improved by means of genetic algorithm. The etching was conducted in a C2F6 inductively coupled plasma. A 24 full factorial experiment was employed to systematically characterize parameter effects on SiON etching. The process parameters include radio frequency source power, bias power, pressure, and C2F6 flow rate. To test the appropriateness of the trained model, additional 16 experiments were conducted. For comparison, four types of statistical regression models were built. Compared to the best regression model, the optimized neural network model demonstrated an improvement of about 52%. The optimized model was used to infer etch mechanisms as a function of parameters. The pressure effect was noticeably large only as relatively large ion bombardment was maintained in the process chamber. Ion-bombardment-activated polymer deposition played the most significant role in interpreting the complex effect of bias power or C2F6 flow rate. Moreover, [CF2] was expected to be the predominant precursor to polymer deposition.

  8. Reactive Ion Etching of SiC in SF_6/He Plasmas

    NASA Astrophysics Data System (ADS)

    Alapati, Ramakanth; Nordheden, Karen J.

    2003-10-01

    Etch rates of greater than 400 Åmin have been achieved for 6H SiC in a Plasma Therm 790 RIE system using SF_6/He gas mixtures. Both pressure and composition are strong determining factors in optimizing the etch rate. For an rf power of 175 W, the etch rate maximizes at a pressure of 125 mTorr and a composition of 50% SF_6. Microwave measeurements indicate that the addition of helium results in an increase in the average electron density, although significant electron attachment is apparent. The electron density also exhibits a maximum at a pressure of 125 mTorr. Optical emission spectroscopy shows that the addition of helium results in increased emission of F and F_2, and these emissions also exhibit maxima at a pressure of 125 mTorr. The higher electron density and possibility of increased electron temperature, as a result of electron attachment heating, are believed to be responsible for an increase in the dissociation of SF6 which results in an enhanced SiC etch rate.

  9. Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

    SciTech Connect

    Hirota, Kosa Itabashi, Naoshi; Tanaka, Junichi

    2014-11-01

    The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaning method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.

  10. Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation

    SciTech Connect

    Jinnai, Butsurin; Koyama, Koji; Kato, Keisuke; Yasuda, Atsushi; Momose, Hikaru; Samukawa, Seiji

    2009-03-01

    ArF excimer laser lithography was introduced to fabricate nanometer-scale devices and uses chemically amplified photoresist polymers including photoacid generators (PAGs). Because plasma-etching processes cause serious problems related to the use of ArF photoresists, such as line-edge roughness and low etching selectivity, we have to understand the interaction between plasma and ArF photoresist polymers. Investigating the effects of surface temperature and the irradiation species from plasma, we have found that ion irradiation by itself did not drastically increase the roughness or etching rate of ArF photoresist films unless it was combined with ultraviolet/vacuum ultraviolet (UV/VUV) photon irradiation. The structures of ArF photoresist polymers were largely unchanged by ion irradiation alone but were destroyed by combinations of ion and UV/VUV-photon irradiation. Our results suggested that PAG-mediated deprotection induced by UV/VUV-photon irradiation was amplified at surface temperatures above 100 deg. C. The etching rate and surface roughness of plasma-etched ArF photoresists are affected by the irradiation species and surface temperature during plasma etching. UV/VUV-photon irradiation plays a particularly important role in the interaction between plasma and ArF photoresist polymers.

  11. Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

    SciTech Connect

    Shin, Hyungjoo; Zhu Weiye; Liu Lei; Sridhar, Shyam; Donnelly, Vincent M.; Economou, Demetre J.; Lenox, Chet; Lii, Tom

    2013-05-15

    Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaN etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.

  12. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  13. Effect of damage removal etch (DRE) on plasma textured, multi-crystalline solar cells

    NASA Astrophysics Data System (ADS)

    Majumdar, S.; Pathak, M.; Chahar, N.; Sharan, A.; Saxena, A. K.; Bhattacharya, S.

    2014-10-01

    In the present work, a self-masked, dry, plasma texturing process for multi crystalline silicon (mc-Si) wafers has been developed that results in a higher cell performance than that with un-textured wafers. Plasma textured samples prepared have low levels (∼4%) of reflectance. Plasma damage of textured wafers has been eliminated by a damage removal etch (DRE). The improvement in efficiency of mc-Si solar cells up to 15.1% has been attributed to complete suppression of reflectivity (4-5%) in a broad spectral range (350-800 nm) leading to black silicon surface. Also, DRE on plasma textured wafers has been found to result in reduced surface damage compared to cells without DRE leading to higher cell efficiencies.

  14. Characterization of transmission line effects and ion-ion plasma formation in an inductively coupled plasma etch reactor

    NASA Astrophysics Data System (ADS)

    Khater, Marwan H.

    2000-10-01

    The plasma and processing uniformity are greatly affected by the gas flow distribution and the source geometry in inductively coupled plasma (ICP) etch reactors. However, a reasonably uniform source design, along with uniform gas distribution, does not always guarantee uniform plasma, because transmission line (i.e. standing wave) effects also impact its performance. In this work, we demonstrate that the gas flow distribution can have a major impact on both the plasma density profiles and etch rate uniformity at low pressures where one might expect diffusion to make gas flow distribution less important. We also present an ICP source design with a geometry that enables better control over the field profiles azimuthal symmetry despite transmission line effects. B-dot probe measurements of the free space electromagnetic fields for the new source and a comparably dimensioned standard planar coil showed improved azimuthal symmetry for the new source. We have also developed a three-dimensional electromagnetic model for ICP sources that accounts for current variations along the source length due to standing wave effects. The electromagnetic field profiles obtained from the model showed good agreement with the measured field profiles. Langmuir probe measurements showed that the new ICP source generated high density (1011--1012 cm-3) plasmas at low pressures with significantly improved azimuthal symmetry of power deposition and plasma generation. In addition, polysilicon etch rate profiles on 150 mm wafers also showed improved azimuthal symmetry and uniformity with the new ICP source. The new source was then used to investigate chlorine discharge properties and their spatial profiles in continuous wave (CW) and pulsed operation. Time-resolved Langmuir probe measurements showed that electron-free or "ion-ion" chlorine plasma forms during the afterglow (i.e. power-off) due to electron attachment. Such electron-free plasma can provide both positive and negative ion fluxes to a

  15. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  16. Electrode-selective deposition/etching processes using an SiF4/H2/Ar plasma chemistry excited by sawtooth tailored voltage waveforms

    NASA Astrophysics Data System (ADS)

    Wang, J. K.; Johnson, E. V.

    2017-01-01

    We report on the electrode-selective deposition and etching of hydrogenated silicon thin films using a plasma enhanced chemical vapour deposition process excited by sawtooth-shaped tailored voltage waveforms (TVWs). The slope asymmetry of such waveforms leads to a different rate of sheath expansion and contraction at each electrode, and therefore different electron power absorption near each electrode. This effect was employed with an SiF4/H2/Ar plasma chemistry, as the surface processes that result from this gas mixture depend strongly on the local balance between multiple precursors. For a specific gas flow ratio, a deposition rate of 0.82 Å s-1 on one electrode and an etching rate of 1.2 Å s-1 on the other were achieved. Moreover, this deposition/etching balance is controlled by the H2 flow rate, which limits the deposition rate at low flows. When the H2 injection is sufficiently high, the processes are then limited by the dissociation of SiF4, and the relative rate of the surface processes on the two electrodes are reversed, i.e. a higher net deposition rate is observed on the electrode where the fast sheath contraction occurs due to the electronegative character of the plasma.

  17. Roughness formation on photoresist during etching examined by HBr plasma-beam

    NASA Astrophysics Data System (ADS)

    Sekine, Makoto; Zhang, Yan; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Hori, Masaru; Plasma Nanotechnology Team

    2014-10-01

    For highly precise patterning in device fabrication, it is required to suppress roughness formations on photoresist (PR) polymers during plasma etching. HBr plasma treatment called ``plasma cure'' was proposed to reduce the roughness. By using a beam irradiation, we reported the PR roughness formation in fluorocarbon plasma, and the effect of HBr cure. We report the roughness formation mechanism by surface analyses and power spectral density (PSD) of the roughness. Average slope and roll-off frequency of PSD are characterized by frequency components, the high-frequency roughness. We treated the data for six samples: a) pristine, b) after Ar plasma irradiation, c) after Ar plasma followed by HBr cure, d) after HBr cure, e) after HBr followed by Ar plasma beam, and f) after HBr followed by H2 and Ar plasma beam irradiations. The PSD slopes were changed by each process. Based on the results, we speculated that the Ar-plasma beam formed a crust layer on the PR surface with unrelieved stress and HBr cure may soften the bulk PR to relieve the stress and cause agglomeration of polymers at the size over 10 nm.

  18. Characterization of electron cyclotron resonance hydrogen plasmas

    SciTech Connect

    Outten, C.A. . Dept. of Nuclear Engineering); Barbour, J.C.; Wampler, W.R. )

    1990-01-01

    Electron cyclotron resonance (ECR) plasmas yield low energy and high ion density plasmas. The characteristics downstream of an ECR hydrogen plasma were investigated as a function of microwave power and magnetic field. A fast-injection Langmuir probe and a carbon resistance probe were used to determine plasma potential (V{sub p}), electron density (N{sub e}), electron temperature (T{sub e}), ion energy (T{sub i}), and ion fluence. Langmuir probe results showed that at 17 cm downstream from the ECR chamber the plasma characteristics are approximately constant across the center 7 cm of the plasma for 50 Watts of absorbed power. These results gave V{sub p} = 30 {plus minus} 5 eV, N{sub e} = 1 {times} 10{sup 8} cm{sup {minus}3}, and T{sub e} = 10--13 eV. In good agreement with the Langmuir probe results, carbon resistance probes have shown that T{sub i} {le} 50 eV. Also, based on hydrogen chemical sputtering of carbon, the hydrogen (ion and energetic neutrals) fluence rate was determined to be 1 {times} 10{sup 16}/cm{sup 2}-sec. at a pressure of 1 {times} 10{sup {minus}4} Torr and for 50 Watts of absorbed power. 19 refs.

  19. Precision optical asphere fabrication by plasma jet chemical etching (PJCE) and ion beam figuring

    NASA Astrophysics Data System (ADS)

    Schindler, Axel; Boehm, Georg; Haensel, Thomas; Frank, Wilfried; Nickel, Andreas; Rauschenbach, Bernd; Bigl, Frieder

    2001-12-01

    We develop a Plasma Jet Chemical Etching (PJCE) technique for high rate precision machining of optical materials aiming in a technology mature for precision asphere and free-form surface topology fabrication. The present contribution summarizes the achievements after about twelve months experience with a prototype production tool facility. PJCE is performed with the help of a microwave driven reactive plasma-jet working in a broad pressure range (10-600 mbar). We developed a moveable lightweight microwave plasma jet source for dwell time techniques performed in a roughly pumped process chamber equipped with a six axis system for precision workpiece and plasma source movement. Volume etch rates of some 10 mm3/min have been achieved for fused silica and silicon, respectively, using reactive (CF4,SF6,O2) and inert (Ar,He) gas mixtures and applying a microwave (2.45 GHz) power in the 100-200 W range. Large quartz plates (80-160 mm) have been figured using dwell time methods to achieve aspheric deformations of some 10 micrometers . The figured surfaces show shape errors of 1-2 micrometers and a microroughness of 50-100 nm RMS but no sub-surface damage enabling a small tool shape conserving post polishing up to the sub-nanometer roughness level. Thus, surface shaping to the nanometer error range can be done by ion beam finishing.

  20. A role of low pressure plasma discharge on etch rate of SiO2 dummy wafer

    NASA Astrophysics Data System (ADS)

    Milosavljevic, Vladimir; Zekic, Andrjana; Popovic, Dusan; Macgearailt, Niall; Daniels, Stephen

    2009-10-01

    Plasma has become indispensable for advanced materials processing, also low--k materials as SiO2 play important role in semiconductor industry. In this work a treatment of SiO2 single crystal by DC plasma discharge is studied in details. There are many effects occurred during plasma--surface interactions. Our work is focused on interaction between ions and dielectric surface. The etch rates, surface morphology and chemical composition of modified surface layer obtained by DC plasma etching are reported. Influence of plasma chemistry (SF6, O2, N2, Ar and He), discharge voltage (up to 1.2 kV), gas flow (up to 25 sccm, for each gas) and electrode--wafer geometry on etch rate of SiO2 wafer have been studied. Offline metrology is conducted for SiO2 wafer by SEM/EDAX technique and Raman scattering. Broad Raman peak at around 2800 cm-1 is observed for both, treated and original, investigated SiO2 wafers. Effects of plasma treatment conditions on integrated intensity of this peak are reported in the paper. An analysis of this correlation could be a framework for creating virtual etches rate sensors, which might be of importance in managing of plasma etching processes.

  1. Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma.

    PubMed

    Jeon, Min Hwan; Park, Jin Woo; Yun, Deok Hyun; Kim, Kyong Nam; Yeom, Geun Young

    2015-11-01

    The amorphous carbon layer (ACL), used as the hardmask for the etching of nanoscale semi-conductor materials, was etched using O2/CHF3 in addition to O2/N2 using pulsed dual-frequency capacitively coupled plasmas, and the effects of source power pulsing for different gas combinations on the characteristics of the plasmas and ACL etching were investigated. As the etch mask for ACL, a patterned SiON layer was used. The etch rates of ACL were decreased with the decrease of pulse duty percentage for both O2/N2 and O2/CHF3 due to decrease of the reactive radicals, such as F and O, with decreasing pulse duty percentage. In addition, at the same pulse duty percentage, the etch selectivity of ACL/SiON with O2/CHF3 was also significantly lower than that with O2/N2. However, the etch profiles of ACL with O2/CHF3 was more anisotropic and the etch profiles were further improved with decreasing the pulse duty percentage than those of ACL with O2/N2. The improved anisotropic etch profiles of ACL with decreasing pulse duty percentage for O2/CHF3 were believed to be related to the formation of a more effective passivation layer, such as a thick fluorocarbon layer, on the sidewall of the ACL during the etching with O2/CHF3, compared to the weak C-N passivation layer formed on the sidewall of ACL when using O2/N2.

  2. Upgradation of bauxite by molecular hydrogen and hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Parhi, B. R.; Sahoo, S. K.; Mishra, S. C.; Bhoi, B.; Paramguru, R. K.; Satapathy, B. K.

    2016-10-01

    An approach was developed to upgrade the bauxite ore by molecular hydrogen and hydrogen plasma. A gibbsite-type bauxite sample was obtained from National Aluminium Company (NALCO), Odisha, India. The obtained sample was crushed and sieved (to 100 μm) prior to the chemical analysis and grain-size distribution study. The bauxite sample was calcined in the temperature range from 500 to 700°C for different time intervals to optimize the conditions for maximum moisture removal. This process was followed by the reduction of the calcined ore by molecular hydrogen and hydrogen plasma. Extraction of alumina from the reduced ore was carried out via acid leaching in chloride media for 2 h at 60°C. X-ray diffraction, scanning electron microscopy, thermogravimetry in conjunction with differential scanning calorimetry, and Fourier transform infrared spectroscopy were used to determine the physicochemical characteristics of the material before and after extraction. Alumina extracted from the reduced ore at the optimum calcination temperature of 700°C and the optimum calcination time of 4 h is found to be 90% pure.

  3. Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

    NASA Astrophysics Data System (ADS)

    Zakour, Sihem Ben; Taleb, Hassen

    2017-02-01

    Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

  4. Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

    NASA Astrophysics Data System (ADS)

    Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

    2016-05-01

    We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

  5. Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

    NASA Astrophysics Data System (ADS)

    Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

    2015-03-01

    Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

  6. Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

    NASA Astrophysics Data System (ADS)

    Altamore, C.; Tringali, C.; Sparta', N.; Di Marco, S.; Grasso, A.; Ravesi, S.

    2010-02-01

    In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (105) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 101 Hz to 106 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl2/Ar chemistry. The relationship between the etch rate and the Cl2/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl2/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

  7. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    PubMed

    Yang, Jie; McArdle, Conor; Daniels, Stephen

    2014-01-01

    A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR) statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A), takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  8. Plasma treatment of dentin surfaces for improving self-etching adhesive/dentin interface bonding

    PubMed Central

    Dong, Xiaoqing; Li, Hao; Chen, Meng; Wang, Yong; Yu, Qingsong

    2015-01-01

    This study is to evaluate plasma treatment effects on dentin surfaces for improving self-etching adhesive and dentin interface bonding. Extracted unerupted human third molars were used after crown removal to expose dentin. One half of each dentin surface was treated with atmospheric non-thermal argon plasmas, while another half was untreated and used as the same tooth control. Self-etching adhesive and universal resin composite was applied to the dentin surfaces as directed. After restoration, the adhesive-dentin bonding strength was evaluated by micro-tensile bonding strength (μTBS) test. Bonding strength data was analyzed using histograms and Welch’s t-test based on unequal variances. μTBS test results showed that, with plasma treatment, the average μTBS value increased to 69.7±11.5 MPa as compared with the 57.1±17.5 MPa obtained from the untreated controls. After 2 months immersion of the restored teeth in 37 °C phosphate buffered saline (PBS), the adhesive-dentin bonding strengths of the plasma-treated specimens slightly decreased from 69.7±11.5 MPa to 63.9±14.4 MPa, while the strengths of the untreated specimens reduced from 57.1±17.5 MPa to 48.9±14.6 MPa. Water contact angle measurement and scanning electron microscopy (SEM) examination verified that plasma treatment followed by water rewetting could partially open dentin tubules, which could enhance adhesive penetration to form thicker hybrid layer and longer resin tags and consequently improve the adhesive/dentin interface quality. PMID:26273561

  9. Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

    NASA Astrophysics Data System (ADS)

    Mizubayashi, Wataru; Noda, Shuichi; Ishikawa, Yuki; Nishi, Takashi; Kikuchi, Akio; Ota, Hiroyuki; Su, Ping-Hsun; Li, Yiming; Samukawa, Seiji; Endo, Kazuhiko

    2017-02-01

    We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact.

  10. Plasma etching and ashing: a technique for demonstrating internal structures of helminths using scanning electron microscopy.

    PubMed

    Veltkamp, C J; Chubb, J C

    2006-03-01

    Plasma etching and ashing for demonstrating the three-dimensional ultrastructure of the internal organs of helminths is described. Adult worms of the cestode Caryophyllaeides fennica were dehydrated through an ethanol series, critical point dried (Polaron E3000) and sputter coated with 60% gold-palladium (Polaron E5100) and glued to a standard scanning electron microscope (SEM) stub positioned as required for ashing. After initial SEM viewing of worm surfaces for orientation, stubs were placed individually in the reactor chamber of a PT7150 plasma etching and ashing machine. Worms were exposed to a radio frequency (RF) potential in a low pressure (0.2 mbar) oxygen atmosphere at room temperature. The oxidation process was controlled by varying the times of exposure to the RF potential between 2 to 30 min, depending on the depth of surface tissue to be removed to expose target organs or tissues. After each exposure the oxidized layer was blown from the surface with compressed air, the specimen sputter-coated, and viewed by SEM. The procedure was repeated as necessary, to progressively expose successive layers. Fine details of organs, cells within, and cell contents were revealed. Ashing has the advantage of providing three dimensional images of the arrangement of organs that are impossible to visualize by any other procedure, for example facilitating testes counts in cestodes. Both freshly-fixed and long-term stored helminths can be ashed. Ashing times to obtain the desired results were determined by trial so that some duplicate material was needed.

  11. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    NASA Astrophysics Data System (ADS)

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  12. Surface Modification of Poly(methyl methacrylate) by Hydrogen-Plasma Exposure and Its Sputtering Characteristics by Ultraviolet Light Irradiation

    NASA Astrophysics Data System (ADS)

    Yoshimura, Satoru; Ikuse, Kazumasa; Sugimoto, Satoshi; Murai, Kensuke; Honjo, Kuniaki; Kiuchi, Masato; Hamaguchi, Satoshi

    2013-09-01

    Surface modification of poly(methyl methacrylate) (PMMA) films by hydrogen-plasma exposure has been studied in the light of sputtering resistance of polymer-based materials in plasma etching processes. Surface measurements of PMMA were performed with X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, and spectroscopic ellipsometry. It has been found that oxygen atoms are preferentially removed from the surface when a PMMA film is subjected to hydrogen-plasma exposure, with the depth of modification being about 40 nm in the case we examined. Hydrogen-plasma exposure is also found to reduce the sputtering yields of PMMA by ultraviolet light irradiation, as in the case of Ar+ ion irradiation [S. Yoshimura et al.: J. Vac. Soc. Jpn. 56 (2013) 129]. The results suggest that PMMA films become hardened and more sputtering resistant due to the formation of a thick (i.e., 40 nm in the case of this study) amorphous carbon layer by hydrogen-plasma exposure. Hydrogen-plasma exposure is thus an effective technique to increase etching resistance of polymer films.

  13. Formation mechanism of graphite hexagonal pyramids by argon plasma etching of graphite substrates

    NASA Astrophysics Data System (ADS)

    Glad, X.; de Poucques, L.; Bougdira, J.

    2015-12-01

    A new graphite crystal morphology has been recently reported, namely the graphite hexagonal pyramids (GHPs). They are hexagonally-shaped crystals with diameters ranging from 50 to 800 nm and a constant apex angle of 40°. These nanostructures are formed from graphite substrates (flexible graphite and highly ordered pyrolytic graphite) in low pressure helicon coupling radiofrequency argon plasma at 25 eV ion energy and, purportedly, due to a physical etching process. In this paper, the occurrence of peculiar crystals is shown, presenting two hexagonal orientations obtained on both types of samples, which confirms such a formation mechanism. Moreover, by applying a pretreatment step with different time durations of inductive coupling radiofrequency argon plasma, for which the incident ion energy decreases at 12 eV, uniform coverage of the surface can be achieved with an influence on the density and size of the GHPs.

  14. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    SciTech Connect

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  15. Producing Hydrogen by Plasma Pyrolysis of Methane

    NASA Technical Reports Server (NTRS)

    Atwater, James; Akse, James; Wheeler, Richard

    2010-01-01

    Plasma pyrolysis of methane has been investigated for utility as a process for producing hydrogen. This process was conceived as a means of recovering hydrogen from methane produced as a byproduct of operation of a life-support system aboard a spacecraft. On Earth, this process, when fully developed, could be a means of producing hydrogen (for use as a fuel) from methane in natural gas. The most closely related prior competing process - catalytic pyrolysis of methane - has several disadvantages: a) The reactor used in the process is highly susceptible to fouling and deactivation of the catalyst by carbon deposits, necessitating frequent regeneration or replacement of the catalyst. b) The reactor is highly susceptible to plugging by deposition of carbon within fixed beds, with consequent channeling of flow, high pressure drops, and severe limitations on mass transfer, all contributing to reductions in reactor efficiency. c) Reaction rates are intrinsically low. d) The energy demand of the process is high.

  16. Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma

    SciTech Connect

    Kwon, Kwang-Ho; Efremov, Alexander; Ham, Yong-Hyun; Min, Nam Ki; Lee, Hyun Woo; Hong, Mun Pyo; Kim, Kwangsoo

    2010-01-15

    The investigations of etch characteristics and mechanisms for indium tin oxide (In{sub 2}O{sub 3}){sub 0.9}:(SnO{sub 2}){sub 0.1} (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%-100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species.

  17. Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

    NASA Astrophysics Data System (ADS)

    Min, Jae-Ho; Lee, Gyeo-Re; Lee, Jin-Kwan; Moon, Sang Heup; Kim, Chang-Koo

    2004-05-01

    The dependences of etch rates on the angle of ions incident on the substrate surface in four plasma/substrate systems that constitute the advanced Bosch process were investigated using a Faraday cage designed for the accurate control of the ion-incident angle. The four systems, established by combining discharge gases and substrates, were a SF6/poly-Si, a SF6/fluorocarbon polymer, an O2/fluorocarbon polymer, and a C4F8/Si. In the case of SF6/poly-Si, the normalized etch rates (NERs), defined as the etch rates normalized by the rate on the horizontal surface, were higher at all angles than values predicted from the cosine of the ion-incident angle. This characteristic curve shape was independent of changes in process variables including the source power and bias voltage. Contrary to the earlier case, the NERs for the O2/polymer decreased and eventually reached much lower values than the cosine values at angles between 30° and 70° when the source power was increased and the bias voltage was decreased. On the other hand, the NERs for the SF6/polymer showed a weak dependence on the process variables. In the case of C4F8/Si, which is used in the Bosch process for depositing a fluorocarbon layer on the substrate surface, the deposition rate varied with the ion incident angle, showing an S-shaped curve. These characteristic deposition rate curves, which were highly dependent on the process conditions, could be divided into four distinct regions: a Si sputtering region, an ion-suppressed polymer deposition region, an ion-enhanced polymer deposition region, and an ion-free polymer deposition region. Based on the earlier characteristic angular dependences of the etch (or deposition) rates in the individual systems, ideal process conditions for obtaining an anisotropic etch profile in the advanced Bosch process are proposed. .

  18. Etching of graphene in a Hydrogen-rich Atmosphere towards the Formation of Hydrocarbons in Circumstellar Clouds

    PubMed Central

    Martínez, José I.; Martín-Gago, José A.; Cernicharo, José; de Andres, Pedro L.

    2015-01-01

    We describe a mechanism that explains the formation of hydrocarbons and hydrocarbyls from hydrogenated graphene/graphite; hard C–C bonds are weakened and broken by the synergistic effect of chemisorbed hydrogen and high temperature vibrations. Total energies, optimized structures, and transition states are obtained from Density Functional Theory simulations. These values have been used to determine the Boltzman probability for a thermal fluctuation to overcome the kinetic barriers, yielding the time scale for an event to occur. This mechanism can be used to rationalize the possible routes for the creation of small hydrocarbons and hydrocarbyls from etched graphene/graphite in stellar regions. PMID:26709358

  19. Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas

    NASA Astrophysics Data System (ADS)

    Li, Juntao; Xia, Yangyang; Liu, Bo; Feng, Gaoming; Song, Zhitang; Gao, Dan; Xu, Zhen; Wang, Weiwei; Chan, Yipeng; Feng, Songlin

    2016-08-01

    Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge2Sb2Te5 (GST) in different halogen based plasmas (CF4, Cl2 and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF4. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  20. Dry etching of metallization

    NASA Technical Reports Server (NTRS)

    Bollinger, D.

    1983-01-01

    The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

  1. Spatial profile monitoring of etch products of silicon in HBr/Cl{sub 2}/O{sub 2}/Ar plasma

    SciTech Connect

    Tanaka, Junichi; Miya, Go

    2007-03-15

    The authors have developed a radical-distribution monitoring system for obtaining the spatial profiles of etching products. This system combines Abel inversion and actinometry to estimate the local densities of radicals. The profiles of Si, SiCl, and SiCl{sub 2} in HBr/Cl{sub 2}/O{sub 2}/Ar plasma are captured with this monitoring system. From the gradient analysis of silicon-containing etch products, they found that the source of SiCl{sub 2} is the wafer surface and Si and SiCl are produced in the plasma. In other words, SiCl{sub 2} is produced by the etching reactions on the wafer and diffuses into the plasma to be the source of Si or SiCl through dissociation. In the etcher used for this experiment, etching gases are supplied from a top plate inducing downward flows. At a pressure as low as 0.4 Pa, the effect of convection on etch products is also observed. Increasing total gas flow rate intensifies convection and changes the spatial profile of SiCl{sub 2}. However, on the wafer surface, the convective effect saturated at a total flow rate of 200 SCCM (SCCM denotes cubic centimeter per minute at STP). The ratio of the emission intensities of SiCl{sub 2} and supplied etching gases was found to be a convenient index for visualizing the effect of gas flow. The shapes of the gas jet from both 170- and 50-mm-diameter gas inlets were drawn in contour plots. The jet from the narrow inlet swept away the etch products in the center of the wafer.

  2. Effect of plasma etching on destructive adsorption properties of polypropylene fibers containing magnesium oxide nanoparticles.

    PubMed

    Lange, Laura E; Obendorf, S Kay

    2012-02-01

    Dermal absorption of pesticides poses a danger for agricultural workers. Use of personal protection equipment (PPE) is required to provide protection; some of the current PPE involves impermeable barriers. In these barrier materials, the same mechanism that prevents the penetration of toxic chemicals also blocks the passage of water vapor and air from flowing through the material, making the garments uncomfortable. Fibers that degrade organophosphate pesticides, such as methyl parathion, were developed by incorporating metal oxides. These modified fibers can be incorporated into conventional fabric structures that allow water vapor to pass through, thereby maintaining comfort. Fibers with self-decontamination functionality were developed by incorporating magnesium oxide (MgO) nanoparticles into a polypropylene (PP) melt-extruded fiber. These fibers were then treated with plasma etching to expose increased surface area of the MgO nanoparticles. Three steps were involved in this research project: (1) determining the reactivity of MgO and methyl parathion, (2) making melt-spun MgO/PP fibers, and (3) testing the reactivity of MgO/PP composite fibers and methyl parathion. It was confirmed that MgO stoichiometrically degrades methyl parathion by way of destructive adsorption. The etching of the PP fibers containing MgO nanoparticles increased the chemical accessibility of MgO reactive sites, therefore making them more effective in degrading methyl parathion. These fibers can enhance the protection provided by PPE to agricultural and horticultural workers and military personnel.

  3. Extreme hydrogen plasma densities achieved in a linear plasma generator

    SciTech Connect

    Rooij, G. J. van; Veremiyenko, V. P.; Goedheer, W. J.; de Groot, B.; Kleyn, A. W.; Smeets, P. H. M.; Versloot, T. W.; Whyte, D. G.; Engeln, R.; Schram, D. C.; Cardozo, N. J. Lopes

    2007-03-19

    A magnetized hydrogen plasma beam was generated with a cascaded arc, expanding in a vacuum vessel at an axial magnetic field of up to 1.6 T. Its characteristics were measured at a distance of 4 cm from the nozzle: up to a 2 cm beam diameter, 7.5x10{sup 20} m{sup -3} electron density, {approx}2 eV electron and ion temperatures, and 3.5 km/s axial plasma velocity. This gives a 2.6x10{sup 24} H{sup +} m{sup -2} s{sup -1} peak ion flux density, which is unprecedented in linear plasma generators. The high efficiency of the source is obtained by the combined action of the magnetic field and an optimized nozzle geometry. This is interpreted as a cross-field return current that leads to power dissipation in the beam just outside the source.

  4. Hydrogen Sulfide Inhibits Plasma Renin Activity

    PubMed Central

    Lu, Ming; Liu, Yi-Hong; Goh, Hong Swen; Wang, Josh Jia Xing; Yong, Qian-Chen; Wang, Rui

    2010-01-01

    The development of renovascular hypertension depends on the release of renin from the juxtaglomerular (JG) cells, a process regulated by intracellular cAMP. Hydrogen sulfide (H2S) downregulates cAMP production in some cell types by inhibiting adenylyl cyclase, suggesting the possibility that it may modulate renin release. Here, we investigated the effect of H2S on plasma renin activity and BP in rat models of renovascular hypertension. In the two-kidney-one-clip (2K1C) model of renovascular hypertension, the H2S donor NaHS prevented and treated hypertension. Compared with vehicle, NaHS significantly attenuated the elevation in plasma renin activity and angiotensin II levels but did not affect plasma angiotensin-converting enzyme activity. Furthermore, NaHS inhibited the upregulation of renin mRNA and protein levels in the clipped kidneys of 2K1C rats. In primary cultures of renin-rich kidney cells, NaHS markedly suppressed forskolin-stimulated renin activity in the medium and the intracellular increase in cAMP. In contrast, NaHS did not affect BP or plasma renin activity in normal or one-kidney-one-clip (1K1C) rats, both of which had normal plasma renin activity. In conclusion, these results demonstrate that H2S may inhibit renin activity by decreasing the synthesis and release of renin, suggesting its potential therapeutic value for renovascular hypertension. PMID:20360313

  5. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

    PubMed Central

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. PMID:24521208

  6. Investigations of Surface Reactions in Neutral Loop Discharge Plasma for High-Aspect-Ratio SiO2 Etching

    NASA Astrophysics Data System (ADS)

    Morikawa, Yasuhiro; Chen, Wei; Hayashi, Toshio; Uchida, Taijiro

    2003-03-01

    The relationship between fine etching and gas structure in magnetic neutral loop discharge (NLD) plasma has been investigated using C4F8, C3F8, and CF3FOC=CF2 (HFE-216) gases. It was found that CF3+ ions were effectively generated in the HFE-216 plasma compared with those in the C4F8 or C3F8 plasma under the same conditions. Hydrofluorocarbon (HFC) gases such as CH2F2 (HFC-32) and CH3CHF2 (HFC-152a) were also employed to realize highly selective etching for SiO2 to the photoresist. C1s X-ray photoelectron spectra showed a prevalence of C-C and C-CFx bonds in the films deposited on the surface in the HFC plasma. This implies that the deposited film was mainly composed of carbon atoms. It was also found from X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared (FTIR) analyses that the chemical state of fluorine in this film was not C-F, but H-C-F. This may lead to the realization of microloading free etching with high resist selectivity in the HFE-216/HFC-152a mixture plasma. Studies on the relationship between etch performance and thin H-C-F polymer film formation were carried out in the HFE-216/HFC-152a mixture plasma. It can be thought that the interaction of the H-C-F film on the surface and CxFy species from the plasma is very low compared with that of a C-F film. The H-C-F film on the sidewall may play serve as a lubricant and may transport etchants to the bottom of the etched pattern. As a result, 50-nm-diameter holes and 40 nm space patterns with aspect ratios of 18 and 22.5, respectively, were successfully fabricated in the HFE-216 + HFC-152a + O2 plasma. The H-C-F film formation on the etched surface enables high-aspect-ratio etching with high selectivity.

  7. Reaction Simulation and Experiment of a Cl2/Ar Inductively Coupled Plasma for Etching of Silicon

    NASA Astrophysics Data System (ADS)

    Ge, Jie; Liu, Xuan; Yang, Yi; Song, Yixu; Ren, Tianling

    2014-05-01

    As the key feature size keeps shrinking down, inductively coupled plasma (ICP) has been widely used for etching. In this study, a commercial ICP etcher filled with Cl2/Ar mixture was simulated. The simulation was based on a commercial software CFD-ACE+, which is a multi-module solver. For the simulation part, CFD-ACE module was used for reactor scale and CFD-TOPO module was used for feature scale simulation. We have reached a reasonable agreement between the simulative and experimental results. Specifically, the different causes of sidewall bowing and microtrenching were discussed. We also analyzed the causes of special profile as trench width scaling down. Moreover, the agreement validates correctness of the chemistry mechanism, so it can be used as guidance for the process designing and manufacturing equipment improvement.

  8. Plasma etching antireflection nanostructures on optical elements in concentrator photovoltaic systems

    NASA Astrophysics Data System (ADS)

    Tamayo Ruiz, Efrain Eduardo; Watanabe, Kentaroh; Tamaki, Ryo; Hoshii, Takuya; Sugiyama, Masakazu; Okada, Yoshitaka; Miyano, Kenjiro; Cvetkovic, Aleksandra; Mohedano, Rubén; Hernandez, Maikel

    2015-01-01

    Transmission-type concentrator photovoltaic (CPV) systems are a potential candidate to achieve high efficiency and low cost solar energy. The use of optical elements in these systems creates reflection losses of incoming solar energy that account for about 8% to 12% depending on the optical design. In order to reduce these losses, we have nanostructured the air/optical-elements' interfaces by using plasma etching methods on the Fresnel lens made of poly(methyl methacrylate) (PMMA) and the homogenizer made of glass. On flat PMMA and glass substrates, transmittance enhancement measurements are in agreement with relative Jsc gains. The field test results using a CPV module with all textured optical-elements' interfaces achieved 8.0% and 4.3% relative Jsc and efficiency gains, respectively, demonstrating the potential of this approach to tackle the reflection losses.

  9. Dry etching method for compound semiconductors

    DOEpatents

    Shul, R.J.; Constantine, C.

    1997-04-29

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  10. Dry etching method for compound semiconductors

    SciTech Connect

    Shul, Randy J.; Constantine, Christopher

    1997-01-01

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  11. Low-damage plasma etching of porous low-k films in CF3Br and CF4 plasmas under low-temperature conditions

    NASA Astrophysics Data System (ADS)

    Miakonkikh, A.; Clemente, I.; Vishnevskiy, A.; Rudenko, K.; Baklanov, M.

    2016-12-01

    Low temperature etching of organosilicate low-k dielectrics in CF3Br and CF4 plasmas is studied. Chemical composition if pristine film and etched were measured by FTIR. Decrease in plasma-induced damage under low-temperature conditions is observed. It is shown that the plasma damage reduction is related to accumulation of reaction products. The reaction products could be removed by thermal bake. In the case of CF4 plasma, the thickness of CFx polymer increases with the temperature reduction. This polymer layer leads to strong decrease of diffusion rate of fluorine atoms and as a consequence to reduction of plasma-induced damage (PID). Bromine containing reaction products are less efficient for low-k surface protection against the plasma damage.

  12. Particle formation and its control in dual frequency plasma etching reactors

    SciTech Connect

    Kim, Munsu; Cheong, Hee-Woon; Whang, Ki-Woong

    2015-07-15

    The behavior of a particle cloud in plasma etching reactors at the moment when radio frequency (RF) power changes, that is, turning off and transition steps, was observed using the laser-light-scattering method. Two types of reactors, dual-frequency capacitively coupled plasma (CCP) and the hybrid CCP/inductively coupled plasma (ICP), were set up for experiments. In the hybrid CCP/ICP reactor (hereafter ICP reactor), the position and shape of the cloud were strongly dependent on the RF frequency. The particle cloud becomes larger and approaches the electrode as the RF frequency increases. By turning the lower frequency power off later with a small delay time, the particle cloud is made to move away from the electrode. Maintaining lower frequency RF power only was also helpful to reduce the particle cloud size during this transition step. In the ICP reactor, a sufficient bias power is necessary to make a particle trap appear. A similar particle cloud to that in the CCP reactor was observed around the sheath region of the lower electrode. The authors can also use the low-frequency effect to move the particle cloud away from the substrate holder if two or more bias powers are applied to the substrate holder. The dependence of the particle behavior on the RF frequencies suggests that choosing the proper frequency at the right moment during RF power changes can reduce particle contamination effectively.

  13. Argon plasma inductively coupled plasma reactive ion etching study for smooth sidewall thin film lithium niobate waveguide application

    NASA Astrophysics Data System (ADS)

    Ulliac, G.; Calero, V.; Ndao, A.; Baida, F. I.; Bernal, M.-P.

    2016-03-01

    Lithium Niobate (LN) exhibits unique physical properties such as remarkable electro-optical coefficients and it is thus an excellent material for a wide range of fields like optic communications, lasers, nonlinear optical applications, electric field optical sensors etc. In order to further enhance the optical device performance and to be competitive with silicon photonics, sub-micrometric thickness lithium niobate films are crucial. A big step has been achieved with the development of LN thin films by using smart cut technology and wafer bonding and these films are nowadays available in the market. However, it is a challenge to obtain the requirements of the high quality thin LN film waveguide. In this letter, we show smooth ridge waveguides fabricated on 700 nm thickness thin film lithium niobate (TFLN). The fabrication has been done by developing and optimizing three steps of the technological process, the mask fabrication, the plasma etching, and a final cleaning wet etching step in order to remove the lithium niobate redeposition on the side walls. We have obtained single mode propagation with light overall losses of only 5 dB/cm.

  14. Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

    NASA Astrophysics Data System (ADS)

    Lee, Gyeo-Re; Hwang, Sung-Wook; Min, Jae-Ho; Moon, Sang Heup

    2002-09-01

    The dependence of the SiO2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from -20 to -600 V in a high-density CHF3 plasma using a Faraday cage to control the ion incident angle. The effect of the bottom plane on the sidewall etching was also examined. Differences in the characteristics of the etch rate as a function of the ion angle were observed for different bias voltage regions. When the absolute value of the bias voltage was smaller than 200 V, the normalized etch rate (NER) defined as the etch rate normalized by the rate on the horizontal surface, changed following a cosine curve with respect to the ion incident angle, defined as the angle between the ion direction and the normal of the substrate surface. When the magnitude of the bias voltage was larger than 200 V, the NER was deviated to higher values from those given by a cosine curve at ion angles between 30deg and 70deg, and then drastically decreased at angles higher than 70deg until a net deposition was observed at angles near 90deg. The characteristic etch-rate patterns at ion angles below 70deg were determined by the ion energy transferred to the surface, which affected the SiO2 etch rate and, simultaneously, the rate of removal of a fluorocarbon polymer film formed on the substrate surface. At high ion angles, particles emitted from the bottom plane contributed to polymer formation on and affected the etching characteristics of the substrate. copyright 2002 American Vacuum Society.

  15. Hydrogen atom in a laser-plasma

    NASA Astrophysics Data System (ADS)

    Falaye, Babatunde J.; Sun, Guo-Hua; Liman, Muhammed S.; Oyewumi, K. J.; Dong, Shi-Hai

    2016-11-01

    We scrutinize the behaviour of the eigenvalues of a hydrogen atom in a quantum plasma as it interacts with an electric field directed along θ  =  π and is exposed to linearly polarized intense laser field radiation. We refer to the interaction of the plasma with the laser light as laser-plasma. Using the Kramers-Henneberger (KH) unitary transformation, which is the semiclassical counterpart of the Block-Nordsieck transformation in the quantized field formalism, the squared vector potential that appears in the equation of motion is eliminated and the resultant equation is expressed in the KH frame. Within this frame, the resulting potential and the corresponding wavefunction have been expanded in Fourier series, and using Ehlotzky’s approximation we obtain a laser-dressed potential to simulate an intense laser field. By fitting the exponential-cosine-screened Coulomb potential into the laser-dressed potential, and then expanding it in Taylor series up to O≤ft({{r}4},α 09\\right) , we obtain the eigensolution (eigenvalues and wavefunction) of the hydrogen atom in laser-plasma encircled by an electric field, within the framework of perturbation theory formalism. Our numerical results show that for a weak external electric field and a very large Debye screening parameter length, the system is strongly repulsive, in contrast with the case for a strong external electric field and a small Debye screening parameter length, when the system is very attractive. This work has potential applications in the areas of atomic and molecular processes in external fields, including interactions with strong fields and short pulses.

  16. Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma

    NASA Astrophysics Data System (ADS)

    Min, Jae-Ho; Hwang, Sung-Wook; Lee, Gyeo-Re; Moon, Sang Heup

    2002-09-01

    The effect of etch-product redeposition on sidewall properties during the etching of step-shaped SiO2 patterns in a CF4 plasma was examined using a Faraday cage located in a transformer coupled plasma etcher. Sidewall properties were observed for two cases: with and without particles emitted from the bottom surface in normal contact with the sidewall. Particles sputtered from the bottom surface were redeposited on the sidewall, which contributes to the formation of a passivation layer on the surface of the latter. The passivation layer consisted of silicon oxide, SixOy, and fluorocarbon, CxFy, the latter comprising the major species. Ar plasma experiments confirmed that CxFy or a fluorocarbon polymer must be present on the sidewall in order for the SixOy species to be deposited on the surface. The redeposited particles, which were largely F-deficient fluorocarbon species, as evidenced by x-ray photoelectron spectroscopy analyses, functioned as precursors for fluorocarbon polymerization, resulting in a rough sidewall surface. The chemical etch rates of SiO2 were retarded by the redeposition of particles, which eventually formed a thick layer, eventually covering the bulk SiO2. Auger electron spectroscopy analyses of the sidewall surface affected by the emission from the bottom suggest that the surface consists of three distinct layers: a surface-carbon layer, a redeposition-etch combined layer, and bulk SiO2. copyright 2002 American Vacuum Society.

  17. Nonhomogeneous surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Yang, Bin; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng; Liu, Jingquan

    2016-10-01

    Surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air were investigated. The morphologies and chemical compositions of the etched surface were analyzed by optical microscopy, SEM, EDS, XPS and ATR-FTIR. The microscopy and SEM images showed the etched surface was nonhomogeneous with six discernable ring patterns from the center to the outside domain, which were composed of (I) a central region; (II) an effective etching region, where almost all of the parylene-C film was removed by the plasma jet with only a little residual parylene-C being functionalized with carboxyl groups (Cdbnd O, Osbnd Cdbnd O-); (III) an inner etching boundary; (IV) a middle etching region, where the film surface was smooth and partially removed; (V) an outer etching boundary, where the surface was decorated with clusters of debris, and (VI) a pristine parylene-C film region. The analysis of the different morphologies and chemical compositions illustrated the different localized etching process in the distinct regions. Besides, the influence of O2 flow rate on the surface properties of the etched parylene-C film was also investigated. Higher volume of O2 tended to weaken the nonhomogeneous characteristics of the etched surface and improve the etched surface quality.

  18. Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma

    NASA Astrophysics Data System (ADS)

    Lele, Chen; Liang, Zhu; Linda, Xu; Dongxia, Li; Hui, Cai; Tod, Pao

    2009-03-01

    The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and O2 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is proportional to the self-bias voltage. This result indicates that other etching parameters contribute to the SiO2 etching. Generally, the CF2 radical is considered as a precursor for fluorocarbon layer formation. At a given power, defluorination of fluorocarbon under high-energy ion bombardment is a main source of fluorine for SiO2 etching. When more CF2 radical in plasma, SiO2 etch rate is increased because more fluorine can be provided. In this case, CF2 is considered as a reactant for SiO2 etching. The etch rate of Si3N4 and Si is mainly determined by the polymer thickness formed on its surface which is dominated by the CF2 density in plasma. Etching results obtained by varying O2 flow rate also support the proposition.

  19. High rate and highly selective anisotropic etching for WSi{sub {ital x}}/poly-Si using electron cyclotron resonance plasma

    SciTech Connect

    Nojiri, K.; Tsunokuni, K.; Yamazaki, K.

    1996-05-01

    High rate and highly selective anisotropic etching for tungsten polycide (WSi{sub {ital x}}/poly-Si) has been developed by fully utilizing such advantages of the electron cyclotron resonance plasma etcher, as high plasma density and independent control of ion energy and plasma density. Highly anisotropic etching with a WSi{sub {ital x}}/poly-Si etch rate of 400 nm/min and a poly-Si/SiO{sub 2} selectivity of 50 was realized by adding O{sub 2} to Cl{sub 2} and reducing the ion energy. O{sub 2} addition increases the WSi{sub {ital x}} etch rate and reduces the SiO{sub 2} etch rate, keeping the poly-Si etch rate nearly constant. This leads to the same etch rate for WSi{sub {ital x}} and poly-Si, and a higher selectivity for poly-Si/SiO{sub 2}. The decrease in the SiO{sub 2} etch rate was found to be mainly caused by a deposition of SiO{sub {ital x}} on the surface. The role of the O{sub 2} was found to be not only increasing the WSi{sub {ital x}} etch rate and the poly-Si/SiO{sub 2} selectivity but forming a sidewall protection film to achieve an anisotropic etching. {copyright} {ital 1996 American Vacuum Society}

  20. New Etch Monitoring Technique

    NASA Astrophysics Data System (ADS)

    Kaiser, Christina; Adamcyk, Martin; Levy, Yuval; Tiedje, Tom; Young, Jeff F.; Kelson, Itzhak

    2000-05-01

    Plasma etching is an important tool for the development of various types of nanostructures. The development of specific plasma etching procedures is often time-consuming. We will describe an new technique for IN-SITU monitoring of the etch rate and sidewall profile of 1D GRATINGS in a remote plasma etcher. The technique involves monitoring the energy loss of alpha particles that propagate through the layer being etched. Samples to be etched are impregnated by a thin near-surface layer of 224Ra nuclei that decay by alpha particle emission. The energy spectrum of the alpha particles is acquired at intervals in the etch process. The etch rate on flat surfaces can be determined quite simply by measuring the change in the peak energy of the transmitted particles. By using a simple geometric model that employs the Bethe Bloch formula for energy loss of charges particles the etch profile of masked samples can also be inferred.

  1. Interfacial modification of amorphous substrates for microcrystalline silicon growth with in situ hydrogen plasma pretreatment

    NASA Astrophysics Data System (ADS)

    Park, Young-Bae; Rhee, Shi-Woo; Li, Xiaodong

    2005-10-01

    Microcrystalline silicon (μc-Si:H) films have been deposited onto hydrogenated and amorphous Si-rich silicon nitride and thermal oxide substrates with silane (SiH4)-hydrogen (H2) in remote plasma-enhanced chemical vapor deposition (RPECVD) at 250 °C, and these films have been investigated. It is found that in situ hydrogen plasma pretreatment of the amorphous substrates prior to μc-Si:H deposition is effective in reducing the interfacial amorphous transition region. It is believed that this hydrogen plasma pretreatment gives adsorption and nucleation sites by breaking weak Si-N and Si-Si bonds and also removes native Si-O x and hydrocarbon impurities. In the case of SiNx:H surface, surface roughening from atomic hydrogen etching and surface cleaning effects are greater than those for stable thermal oxide. Surface crystallization at the initial stage of the growth can be obtained on amorphous substrate at low temperature without an a-Si transition layer.

  2. Electron Recombination in a Dense Hydrogen Plasma

    SciTech Connect

    Jana, M.R.; Johnstone, C.; Kobilarcik, T.; Koizumi, G.M.; Moretti, A.; Popovic, M.; Tollestrup, A.V.; Yonehara, K.; Leonova, M.A.; Schwarz, T.A.; Chung, M.; /Unlisted /IIT, Chicago /Fermilab /MUONS Inc., Batavia /Turin Polytechnic

    2012-05-01

    A high pressure hydrogen gas filled RF cavity was subjected to an intense proton beam to study the evolution of the beam induced plasma inside the cavity. Varying beam intensities, gas pressures and electric fields were tested. Beam induced ionized electrons load the cavity, thereby decreasing the accelerating gradient. The extent and duration of this degradation has been measured. A model of the recombination between ionized electrons and ions is presented, with the intent of producing a baseline for the physics inside such a cavity used in a muon accelerator. Analysis of the data taken during the summer of 2011 shows that self recombination takes place in pure hydrogen gas. The decay of the number of electrons in the cavity once the beam is turned off indicates self recombination rather than attachment to electronegative dopants or impurities. The cross section of electron recombination grows for larger clusters of hydrogen and so at the equilibrium of electron production and recombination in the cavity, processes involving H{sub 5}{sup +} or larger clusters must be taking place. The measured recombination rates during this time match or exceed the analytic predicted values. The accelerating gradient in the cavity recovers fully in time for the next beam pulse of a muon collider. Exactly what the recombination rate is and how much the gradient degrades during the 60 ns muon collider beam pulse will be extrapolated from data taken during the spring of 2012.

  3. Oxygen and nitrogen plasma etching of three-dimensional hydroxyapatite/chitosan scaffolds fabricated by additive manufacturing

    NASA Astrophysics Data System (ADS)

    Myung, Sung-Woon; Kim, Byung-Hoon

    2016-01-01

    Three-dimensional (3D) chitosan and hydroxyapatite (HAp)/chitosan (CH) scaffolds were fabricated by additive manufacturing, then their surfaces were etched with oxygen (O2) and nitrogen (N2) plasma. O2 and N2 plasma etching was performed to increase surface properties such as hydrophilicity, roughness, and surface chemistry on the scaffolds. After etching, hydroxyapatite was exposed on the surface of 3D HAp/CH scaffolds. The surface morphology and chemical properties were characterized by contact angle measurement, scanning electron microscopy, X-ray diffraction, and attenuated total reflection Fourier infrared spectroscopy. The cell viability of 3D chitosan scaffolds was examined by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay. The differentiation of preosteoblast cells was evaluated by alkaline phosphatase assay. The cell viability was improved by O2 and N2 plasma etching of 3D chitosan scaffolds. The present fabrication process for 3D scaffolds might be applied to a potential tool for preparing biocompatible scaffolds.

  4. Plasma processing methods for hydrogen production

    NASA Astrophysics Data System (ADS)

    Mizeraczyk, Jerzy; Jasiński, Mariusz

    2016-08-01

    In the future a transfer from the fossil fuel-based economy to hydrogen-based economy is expected. Therefore the development of systems for efficient H2 production becomes important. The several conventional methods of mass-scale (or central) H2 production (methane, natural gas and higher hydrocarbons reforming, coal gasification reforming) are well developed and their costs of H2 production are acceptable. However, due to the H2 transport and storage problems the small-scale (distributed) technologies for H2 production are demanded. However, these new technologies have to meet the requirement of producing H2 at a production cost of (1-2)/kg(H2) (or 60 g(H2)/kWh) by 2020 (the U.S. Department of Energy's target). Recently several plasma methods have been proposed for the small-scale H2 production. The most promising plasmas for this purpose seems to be those generated by gliding, plasmatron and nozzle arcs, and microwave discharges. In this paper plasma methods proposed for H2 production are briefly described and critically evaluated from the view point of H2 production efficiency. The paper is aiming at answering a question if any plasma method for the small-scale H2 production approaches such challenges as the production energy yield of 60 g(H2)/kWh, high production rate, high reliability and low investment cost. Contribution to the topical issue "6th Central European Symposium on Plasma Chemistry (CESPC-6)", edited by Nicolas Gherardi, Ester Marotta and Cristina Paradisi

  5. Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl 3 plasmas

    NASA Astrophysics Data System (ADS)

    Lee, J. W.; Lim, W. T.; Baek, I. K.; Yoo, S. R.; Jeon, M. H.; Cho, G. S.; Pearton, S. J.; Abernathy, C. R.

    2004-01-01

    The dry etch characteristics of InGaP in BCl 3 planar inductively coupled plasmas (ICP) with additions of Ar or Ne were determined. The inert gas additive provided enhanced etch rates relative to pure BCl 3 and Ne addition in particular produced much higher etch rates at low ratios of BCl 3 in the mixture. The etched features tended to have sloped sidewalls and much rougher surfaces than for GaAs and AlGaAs etched under the same conditions. The practical effect of the Ar or Ne addition was the ability to operate the ICP source over a somewhat broader range of pressures and still maintain practical etch rates. The use of room temperature BCl 3-based etching in a planar ICP appears feasible for base and emitter mesa applications in InGaP/GaAs heterojunction bipolar transistors.

  6. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part 1. GaAs and GaSb

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-23

    The role of the inert gas additive (He, Ar, Xe) to C12 Inductively Coupled Plasmas for dry etching of GaAs and GaSb was examined through the effect on etch rate, surface roughness and near-surface stoichiometry. The etch rates for both materials go through a maximum with Clz 0/0 in each type of discharge (C12/'He, C12/Ar, C12/Xc), reflecting the need to have efficient ion-assisted resorption of the etch products. Etch yields initially increase strongly with source power as the chlorine neutral density increases, but decrease again at high powers as the etching becomes reactant-limited. The etched surfaces are generally smoother with Ax or Xe addition, and maintain their stoichiometry.

  7. Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

    SciTech Connect

    Sung, Dougyong; Jeong, Sangmin; Park, Youngmin; Volynets, Vladimir N.; Ushakov, Andrey G.; Kim, Gon-Ho

    2009-01-15

    The influence of the phase shift between rf voltages applied to the powered electrodes on plasma parameters and etch characteristics was studied in a very high-frequency (VHF) capacitively coupled plasma (CCP) triode reactor. rf voltages at 100 MHz were simultaneously applied to the top and bottom electrodes having a controlled phase shift between them, which could be varied between 0 deg. and 360 deg. Several plasma and process characteristics were measured as a function of the phase shift: (i) radial profiles of plasma-emission intensity, (ii) line-of-sight averaged plasma-emission intensity, and (iii) radial profiles of blanket SiO{sub 2} etching rate over a 300 mm wafer. Radial profiles of plasma emission were obtained using the scanning optical probe. It has been shown that all the measured characteristics strongly depend on the phase shift: (i) plasma-emission intensity is minimal at phase shift equal to 0 deg. and maximal at 180 deg. for all radial positions, while the emission radial profile changes from bell-shaped distribution with considerable nonuniformity at 0 deg. to a much more flattened distribution at 180 deg.; (ii) line-of-sight averaged plasma-emission intensity shows a similar dependence on the phase shift with minimum and maximum at 0 deg. and 180 deg., respectively; and (iii) the etch-rate radial profile at 180 deg. shows a much better uniformity as compared to that at 0 deg. Some of these results can be qualitatively explained by the redistribution of plasma currents that flow between the electrodes and also from the electrodes to the grounded wall with the phase shift. We suggest that the phase-shift effect can be used to improve the plasma and etch-rate spatial uniformity in VHF-CCP triode reactors.

  8. A new reactive atom plasma technology (RAPT) for precision machining: the etching of ULE optical surfaces

    NASA Astrophysics Data System (ADS)

    Fanara, Carlo; Shore, Paul; Nicholls, John R.; Lyford, Nicholas; Sommer, Phil; Fiske, Peter

    2006-06-01

    The next generation of 30-100 metre diameter extremely large telescopes (ELTs) requires large numbers of hexagonal primary mirror segments. As part of the Basic Technology programme run jointly by UCL and Cranfield University, a reactive atomic plasma technology (RAP(tm)) emerged from the US Lawrence Livermore National Laboratory (LLNL), is employed for the finishing of these surfaces. Results are presented on this novel etching technology. The Inductively Coupled Plasma (ICP) operated at atmospheric pressure using argon, activates the chemical species injected through its centre and promotes the fluorine-based chemical reactions at the surface. Process assessment trials on Ultra Low Expansion (ULE(tm)) plates, previously ground at high material removal rates, have been conducted. The quality of the surfaces produced on these samples using the RAP process are discussed. Substantial volumetric material removal rates of up to 0.446(21) mm 3/s at the highest process speed (1,200 mm/min) were found to be possible without pre-heating the substrate. The influences of power transfer, process speed and gas concentration on the removal rates have been determined. The suitability of the RAP process for revealing and removing sub-surface damage induced by high removal rate grinding is discussed. The results on SiC samples are reported elsewhere in this conference.

  9. Etching of UO2 in NF3 RF Plasma Glow Discharge

    SciTech Connect

    Veilleux, John M.

    1999-08-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO2 were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO2 from stainless steel substrates. Experiments were conducted using NF3 gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Depleted UO2 samples each containing 129.4 Bq were prepared from 100 microliter solutions of uranyl nitrate hexahydrate solution. The amorphous UO2 in the samples had a relatively low density of 4.8 gm/cm3. Counting of the depleted UO2 on the substrate following plasma immersion was performed using liquid scintillation counting with alpha/beta discrimination due to the presence of confounding beta emitting daughter products, 234Th and 234Pa. The alpha emission peak from each sample was integrated using a gaussian and first order polynomial fit to improve quantification. The uncertainties in the experimental measurement of the etched material were estimated at about ± 2%. Results demonstrated that UO2 can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO2 in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 μm/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO2 etching was also noted below 50 W in which etching increased up to a maximum pressure, ~23 Pa, then decreased with further increases in pressure.

  10. Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

    SciTech Connect

    Hübner, M.; Lang, N.; Röpcke, J.; Helden, J. H. van; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.

    2015-01-19

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  11. Optimization of an electron cyclotron resonance plasma etch process for [ital n][sup +] polysilicon: HBr process chemistry

    SciTech Connect

    Tipton, G.D.; Blain, M.G. ); Westerfield, P.L.; Trutna, L.S.; Maxwell, K.L. )

    1994-01-01

    Designed experiments were employed to characterize a process for etching phosphorus doped polycrystalline silicon with HBr in a close-coupled electron cyclotron resonance plasma reactor configured for 200 mm wafers. A fractional factorial screening experiment was employed to determine the principal input factors and the main etch effects. Linear models of the process responses indicate rf power, O[sub 2] flow rate, and the position of the resonance zone (with respect to the wafer) as the three strongest factors influencing process performance. Response surfaces generated using data from a follow-on response surface methodology experiment predicted an optimum operating region characterized by relatively low rf power, a small O[sub 2] flow, and a resonance zone position close to the wafer. One operating point in this region demonstrated a polysilicon etch rate of 270 nm/min, an etch rate nonuniformity of 2.2% (1 std. dev.), an etch selectivity to oxide greater than 100:1, and anisotropic profiles. Particle test results for the optimized process indicated that careful selection of the O[sub 2] fraction is required to avoid residue deposition and particle formation.

  12. Optimization of an electron cyclotron resonance plasma etch process for n{sup +} polysilicon: HBr process chemistry

    SciTech Connect

    Tipton, G.D.; Blain, M.G.; Westerfield, P.L.; Trutna, L.S.; Maxwell, K.L.

    1993-08-01

    Designed experiments were employed to characterize a process for etching phosphorus doped polycrystalline silicon with HBr in a close-coupled ECR plasma reactor configured for 200 mm wafers. A fractional factorial screening experiment was employed to determine the principal input factors and the main etch effects. Linear models of the process responses indicate RF power, O{sub 2} flow rate, and the position of the resonance zone (with respect to the wafer) as the three strongest factors influencing process performance. Response surfaces generated using data from a follow-on response surface methodology (RSM) experiment predicted an optimum operating region characterized by relatively low RF power, a small O{sub 2} flow, and a resonance zone position close to the wafer. The optimized process demonstrated a polysilicon etch rate of 270 nm/min, an etch rate non-uniformity of 2.2% (1s), an etch selectivity to oxide greater than 100:1, and anisotropic profiles. Particle test results for the optimized process indicated that careful selection of the O{sub 2} fraction is required to avoid polymer deposition and particle formation.

  13. Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

    SciTech Connect

    Rawal, Dipendra Singh Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan

    2014-05-15

    GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2 μm/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

  14. Hydrogen evolution at a Pt-modified InP photoelectrode: Improvement of current-voltage characteristics by HCl etching

    SciTech Connect

    Kobayashi, Hikaru; Mizuno, Fumiaki; Nakato, Yoshihiro; Tsubomura, Hiroshi )

    1991-01-24

    Hydrogen photoevolution at p-InP electrodes coated with platinum and palladium has been studied. Efficient and stable solar to chemical energy conversion has been achieved after etching the electrodes with concentrated HCl. The current-voltage (I-V) behavior of the as-prepared electrode covered with a continuous Pt layer is poor, due probably to the presence of defect states in InP. The photocurrent density of this electrode decreases with time under illumination, presumably due to an increase in the defect density. After etching of the electrode with concentrated HCl, the barrier height is increased to 1.0 V, and the I-V characteristics are improved remarkably, showing no degradation under illumination. SEM, XPS, and AES analyses show that the concentrated HCl solution dissolves the InP substrate in the InP/Pt interfacial region, and simultaneously part of the Pt is removed from the InP surface. The I-V characteristics of the Pt-deposited electrodes are unaffected by hydrogen or nitrogen bubbling and the reason is discussed.

  15. Etch mechanism of In{sub 2}O{sub 3} and SnO{sub 2} thin films in HBr-based inductively coupled plasmas

    SciTech Connect

    Kwon, Kwang-Ho; Efremov, Alexander; Kim, Moonkeun; Min, Nam Ki; Jeong, Jaehwa; Hong, MunPyo; Kim, Kwangsoo

    2010-03-15

    The investigations of etch characteristics and mechanisms for both In{sub 2}O{sub 3} and SnO{sub 2} thin films in the HBr-based inductively coupled plasmas were carried out. The etch rates were measured as functions of gas mixing ratio (0%-100% Ar), input power (400-700 W), and gas pressure (4-10 mTorr) at fixed bias power (200 W) and gas flow rate [40 SCCM (SCCM denotes cubic centimeter per minute at STP)]. Plasma parameters and composition were determined using a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. The correlations between the behaviors of etch rates and fluxes of plasma active species allow one to infer both In{sub 2}O{sub 3} and SnO{sub 2} etch mechanisms as the transitional regime of ion-assisted chemical reaction, which is controlled by neutral and charged fluxes together.

  16. Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

    SciTech Connect

    Bouchoule, Sophie Cambril, Edmond; Guilet, Stephane; Chanson, Romain; Pageau, Arnaud; Rhallabi, Ahmed; Cardinaud, Christophe

    2015-09-15

    Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

  17. Etching studies of silica glasses in SF{sub 6}/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication

    SciTech Connect

    Lallement, L.; Gosse, C.; Cardinaud, C.; Peignon-Fernandez, M.-C.; Rhallabi, A.

    2010-03-15

    To fabricate microlaboratories, commercially available silica glasses represent a good alternative to the expensive quartz or fused silica substrates. Therefore, the authors have here investigated the behavior of four of them--Vycor, Pyrex, D263, and AF45--in SF{sub 6} and SF{sub 6}/Ar inductively coupled plasmas. Using Vycor, a material close to pure SiO{sub 2}, as a reference, they demonstrated that the etch rate negatively correlates with the global content in metallic oxides. However, no such clear trend was found for the surface roughness and they hypothesize that the large asperities (>500 nm) sometimes observed might be due to local variation in the glass surface composition. Furthermore, investigations on the influence of the plasma conditions (i.e., source power, dc self-bias, gas mixture, and pressure) on the etch rate, surface chemistry, and surface morphology, as well as positive ion current and fluorine concentration measurements, enable them to unravel an ion enhanced chemical etching mechanism, where stronger ion assistance is needed when more metallic oxides are present. By increasing the ion to neutral flux ratio, they consequently could, for all the materials, reduce the surface roughness to less than 5 nm while maintaining etch rates around 150 nm/min. These conditions have further been used to optimize pattern transfer experiments.

  18. Feasibility study of monitoring of plasma etching chamber conditions using superimposed high-frequency signals on rf power transmission line

    NASA Astrophysics Data System (ADS)

    Kasashima, Y.; Uesugi, F.

    2015-10-01

    An in situ monitoring system that can detect changes in the conditions of a plasma etching chamber has been developed. In the system, low-intensity high-frequency signals are superimposed on the rf power transmission line used for generating plasma. The system measures reflected high-frequency signals and detects the change in their frequency characteristics. The results indicate that the system detects the changes in the conditions in etching chambers caused by the changes in the electrode gap and the inner wall condition and demonstrate the effectiveness of the system. The system can easily be retrofitted to mass-production equipment and it can be used with or without plasma discharge. Therefore, our system is suitable for in situ monitoring of mass-production plasma etching chambers. The system is expected to contribute to development of predictive maintenance, which monitors films deposited on the inner wall of the chamber and prevents equipment faults caused by misalignment of chamber parts in mass-production equipment.

  19. Hydrogen isotope fractionation in methane plasma.

    PubMed

    Robert, François; Derenne, Sylvie; Lombardi, Guillaume; Hassouni, Khaled; Michau, Armelle; Reinhardt, Peter; Duhamel, Rémi; Gonzalez, Adriana; Biron, Kasia

    2017-01-31

    The hydrogen isotope ratio (D/H) is commonly used to reconstruct the chemical processes at the origin of water and organic compounds in the early solar system. On the one hand, the large enrichments in deuterium of the insoluble organic matter (IOM) isolated from the carbonaceous meteorites are interpreted as a heritage of the interstellar medium or resulting from ion-molecule reactions taking place in the diffuse part of the protosolar nebula. On the other hand, the molecular structure of this IOM suggests that organic radicals have played a central role in a gas-phase organosynthesis. So as to reproduce this type of chemistry between organic radicals, experiments based on a microwave plasma of CH4 have been performed. They yielded a black organic residue in which ion microprobe analyses revealed hydrogen isotopic anomalies at a submicrometric spatial resolution. They likely reflect differences in the D/H ratios between the various CHx radicals whose polymerization is at the origin of the IOM. These isotopic heterogeneities, usually referred to as hot and cold spots, are commensurable with those observed in meteorite IOM. As a consequence, the appearance of organic radicals in the ionized regions of the disk surrounding the Sun during its formation may have triggered the formation of organic compounds.

  20. Hydrogen isotope fractionation in methane plasma

    PubMed Central

    Robert, François; Derenne, Sylvie; Lombardi, Guillaume; Hassouni, Khaled; Michau, Armelle; Reinhardt, Peter; Duhamel, Rémi; Gonzalez, Adriana; Biron, Kasia

    2017-01-01

    The hydrogen isotope ratio (D/H) is commonly used to reconstruct the chemical processes at the origin of water and organic compounds in the early solar system. On the one hand, the large enrichments in deuterium of the insoluble organic matter (IOM) isolated from the carbonaceous meteorites are interpreted as a heritage of the interstellar medium or resulting from ion−molecule reactions taking place in the diffuse part of the protosolar nebula. On the other hand, the molecular structure of this IOM suggests that organic radicals have played a central role in a gas-phase organosynthesis. So as to reproduce this type of chemistry between organic radicals, experiments based on a microwave plasma of CH4 have been performed. They yielded a black organic residue in which ion microprobe analyses revealed hydrogen isotopic anomalies at a submicrometric spatial resolution. They likely reflect differences in the D/H ratios between the various CHx radicals whose polymerization is at the origin of the IOM. These isotopic heterogeneities, usually referred to as hot and cold spots, are commensurable with those observed in meteorite IOM. As a consequence, the appearance of organic radicals in the ionized regions of the disk surrounding the Sun during its formation may have triggered the formation of organic compounds. PMID:28096422

  1. Hydrogen isotope fractionation in methane plasma

    NASA Astrophysics Data System (ADS)

    Robert, François; Derenne, Sylvie; Lombardi, Guillaume; Hassouni, Khaled; Michau, Armelle; Reinhardt, Peter; Duhamel, Rémi; Gonzalez, Adriana; Biron, Kasia

    2017-01-01

    The hydrogen isotope ratio (D/H) is commonly used to reconstruct the chemical processes at the origin of water and organic compounds in the early solar system. On the one hand, the large enrichments in deuterium of the insoluble organic matter (IOM) isolated from the carbonaceous meteorites are interpreted as a heritage of the interstellar medium or resulting from ion‑molecule reactions taking place in the diffuse part of the protosolar nebula. On the other hand, the molecular structure of this IOM suggests that organic radicals have played a central role in a gas-phase organosynthesis. So as to reproduce this type of chemistry between organic radicals, experiments based on a microwave plasma of CH4 have been performed. They yielded a black organic residue in which ion microprobe analyses revealed hydrogen isotopic anomalies at a submicrometric spatial resolution. They likely reflect differences in the D/H ratios between the various CHx radicals whose polymerization is at the origin of the IOM. These isotopic heterogeneities, usually referred to as hot and cold spots, are commensurable with those observed in meteorite IOM. As a consequence, the appearance of organic radicals in the ionized regions of the disk surrounding the Sun during its formation may have triggered the formation of organic compounds.

  2. Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges

    SciTech Connect

    WOODWORTH,JOSEPH R.; RILEY,MERLE E.; AMATUCCI,VINCENT A.; HAMILTON,THOMAS W.; ARAGON,BEN P.

    2000-05-01

    In this paper, the authors report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 nm to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. The emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage SiO{sub 2}. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light in these discharges is strongly trapped. For the pure halocarbon gases examined in these experiments (C{sub 2}F{sub 6}, CHF{sub 3}, C{sub 4}F{sub 8}), the fluxes of VUV photons to the wafer varied from 1 x 10{sup 15} to 3 x 10{sup 15} photons/cm{sup 2} sec or equivalently from 1.5 to 5 mW/cm{sup 2}. These measurements imply that 0.1% to 0.3% of the rf source power to these discharges ends up hitting the wafer as VUV photons for the typical 20 mT, 200 W rf discharges. For typical ashing discharges containing pure oxygen, the VUV intensities are slightly higher--about 8 mW/cm{sup 2} . As argon or hydrogen diluents are added to the fluorocarbon gases, the VUV intensities increase dramatically, with a 10/10/10 mixture of Ar/C{sub 2}F{sub 6}/H{sub 2} yielding VUV fluxes on the wafer 26 mW/cm{sup 2} and pure argon discharges yielding 52 mW/cm{sup 2} . Adding an rf bias to the wafer had only a small effect on the VUV observed through a side-port of the GEC cell.

  3. Surface reactions during etching of organic low-k films by plasmas of N2 and H2

    NASA Astrophysics Data System (ADS)

    Ishikawa, Kenji; Yamaoka, Yoshikazu; Nakamura, Moritaka; Yamazaki, Yuichi; Yamasaki, Satoshi; Ishikawa, Yasushi; Samukawa, Seiji

    2006-04-01

    Surface reactions during etching of organic low-k film by N2 and H2 plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from N2 and H2. The number of carbon dangling bonds were greater in processes where H2 was present. The passivation of carbon dangling bonds leads to CH3, NH3, and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and C2N2.

  4. Synergistic Effect of Atmospheric Pressure Plasma Pre-Treatment on Alkaline Etching of Polyethylene Terephthalate Fabrics and Films

    NASA Astrophysics Data System (ADS)

    A. Elabid Amel, E.; Guo, Ying; Shi, Jianjun; Ding, Ke; Zhang, Jing

    2016-04-01

    Dyeing of PET materials by traditional methods presents several problems. Plasma technology has received enormous attention as a solution for the environmental problems related with textile surface modifications, and there has been a rapid development and commercialization of plasma technology over the past decade. In this work, the synergistic effect of atmospheric pressure plasma on alkaline etching and deep coloring of dyeing properties on polyethylene terephthalate (PET) fabrics and films was investigated. The topographical changes of the PET surface were investigated by atomic force microscopy (AFM) images, which revealed a smooth surface morphology of the untreated sample whereas a high surface roughness for the plasma and/or alkaline treated samples. The effects of atmospheric pressure plasma on alkaline etching of the structure and properties of PET were investigated by means of differential scanning calorimetry (DSC), the main objective of performing DSC was to investigate the effect of the plasma pre-treatment on the Tg and Tm. Using a tensile strength tester YG065H and following a standard procedure the maximum force and elongation at maximum force of PET materials was investigated. Oxygen and argon plasma pre-treatment was found to increase the PET fabric weight loss rate. The color strength of PET fabrics was increased by various plasma pre-treatment times. The penetration of plasma and alkaline reactive species deep into the PET structure results in better dyeability and leaves a significant effect on the K/S values of the plasma pre-treated PET. It indicated that plasma pre-treatment has a great synergistic effect with the alkaline treatment of PET.

  5. Inductively coupled BCl3/Cl2 /Ar plasma etching of Al-rich AlGaN

    SciTech Connect

    Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; Allerman, Andrew A.; Baca, Albert G.

    2016-12-01

    Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl3 to Cl2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail the effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.

  6. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon

    NASA Astrophysics Data System (ADS)

    Tinck, Stefan; Bogaerts, Annemie

    2016-06-01

    In this work, the role of vibrationally excited HBr (HBr(vib)) is computationally investigated for a HBr/He inductively coupled plasma applied for Si etching. It is found that at least 50% of all dissociations of HBr occur through HBr(vib). This additional dissociation pathway through HBr(vib) makes the plasma significantly more atomic. It also results in a slightly higher electron temperature (i.e. about 0.2 eV higher compared to simulation results where HBr(vib) is not included), as well as a higher gas temperature (i.e. about 50 K higher than without including HBr(vib)), due to the enhanced Franck-Condon heating through HBr(vib) dissociation, at the conditions investigated. Most importantly, the calculated etch rate with HBr(vib) included in the model is a factor 3 higher than in the case without HBr(vib), due to the higher fluxes of etching species (i.e. H and Br), while the chemical composition of the wafer surface shows no significant difference. Our calculations clearly show the importance of including HBr(vib) for accurate modeling of HBr-containing plasmas.

  7. Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: modeling and experimental investigation

    NASA Astrophysics Data System (ADS)

    Van Laer, K.; Tinck, S.; Samara, V.; de Marneffe, J. F.; Bogaerts, A.

    2013-04-01

    In this paper, we investigate the etch process of so-called low-k organic material by means of a N2/H2 capacitively coupled plasma, as applied in the micro-electronics industry for the manufacturing of computer chips. In recent years, such an organic material has emerged as a possible alternative for replacing bulk SiO2 as a dielectric material in the back-end-of-line, because of the smaller parasitic capacity between adjacent conducting lines, and thus a faster propagation of the electrical signals throughout the chip. Numerical simulations with a hybrid plasma model, using an extensive plasma and surface chemistry set, as well as experiments are performed, focusing on the plasma properties as well as the actual etching process, to obtain a better insight into the underlying mechanisms. Furthermore, the effects of gas pressure, applied power and gas composition are investigated to try to optimize the etch process. In general, the plasma density reaches a maximum near the wafer edge due to the so-called ‘edge effect’. As a result, the etch rate is not uniform but will also reach its maximum near the wafer edge. The pressure seems not to have a big effect. A higher power increases the etch rate, but the uniformity becomes (slightly) worse. The gas mixing ratio has no significant effect on the etch process, except when a pure H2 or N2 plasma is used, illustrating the synergistic effects of a N2/H2 plasma. In fact, our calculations reveal that the N2/H2 plasma entails an ion-enhanced etch process. The simulation results are in reasonable agreement with the experimental values. The microscopic etch profile shows the desired anisotropic shape under all conditions under study.

  8. Feature scale model of Si etching in SF{sub 6}/O{sub 2}/HBr plasma and comparison with experiments

    SciTech Connect

    Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark; Aydil, Eray S.

    2006-03-15

    We have developed a semiempirical feature scale model of Si etching in SF{sub 6}/O{sub 2}/HBr plasma. Surface kinetics are modeled using parameters that describe F-based Si etching in SF{sub 6} and SF{sub 6}/O{sub 2} plasmas and Br-based Si etching in HBr plasma. The kinetic parameters in the model are constrained by matching simulated feature profiles with those experimentally obtained at various feed gas compositions. Excellent agreement between experiments and simulations is obtained. The combined experimental and profile simulation study reveals that the addition of HBr to SF{sub 6}/O{sub 2} plasmas results in improved sidewall passivation and elimination of the mask undercut. The vertical etch rate increases as a result of F and Br fluxes focusing toward the bottom of the feature by reflections from passivated sidewalls. Addition of SF{sub 6} to HBr discharge increases the etch rate through chemical etching that produces volatile SiBr{sub 4-x}F{sub x} etch products and ion-enhanced chemical sputtering of fluorinated and brominated Si surfaces by F-containing ions.

  9. Pulse-biased etching of Si3N4-layer in capacitively-coupled plasmas for nano-scale patterning of multi-level resist structures.

    PubMed

    Lee, Hyelim; Kim, Sechan; Choi, Gyuhyun; Lee, Nae-Eung

    2014-12-01

    Pulse-biased plasma etching of various dielectric layers is investigated for patterning nano-scale, multi-level resist (MLR) structures composed of multiple layers via dual-frequency, capacitively-coupled plasmas (CCPs). We compare the effects of pulse and continuous-wave (CW) biasing on the etch characteristics of a Si3N4 layer in CF4/CH2F2/O2/Aretch chemistries using a dual-frequency, superimposed CCP system. Pulse-biasing conditions using a low-frequency power source of 2 MHz were varied by controlling duty ratio, period time, power, and the gas flow ratio in the plasmas generated by the 27.12 MHz high-frequency power source. Application of pulse-biased plasma etching significantly affected the surface chemistry of the etched Si3N4 surfaces, and thus modified the etching characteristics of the Si3N4 layer. Pulse-biased etching was successfully applied to patterning of the nano-scale line and space pattern of Si3N4 in the MLR structure of KrF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer/Si3N4. Pulse-biased etching is useful for tuning the patterning of nano-scale dielectric hard-mask layers in MLR structures.

  10. Computer modelling of cryogenic etching in SF6 /O2 /SiF4 and CxFy inductively coupled plasmas

    NASA Astrophysics Data System (ADS)

    Zhang, Quan-Zhi; Bogaerts, Annemie

    2016-09-01

    Plasma etching plays a more and more important role in microchip fabrication, due to its anisotropy during surface processing. However, current state-of-the-art plasma processing faces significant challenges when going beyond 14 nm features, such as plasma induced damage. A novel process with limited plasma damage is cryogenic etching of low-k material with SF6 /O2 /SiF4 and CxFy plasmas. In this work, a hybrid Monte Carlo-fluid model is employed to describe the plasma behavior, including the species and temperature distributions and power deposition, for SF6 /O2 /SiF4 and CxFy gas mixtures, applied for cryogenic etching under various gas ratios and operating conditions, which can help to establish an optimal process window. Quan-Zhi Zhang gratefully acknowledges the Marie Sklodowska-Curie Action Individual Fellowships (MSCA-IF-2015-EF).

  11. Reaction-diffusion analysis for one-step plasma etching and bonding of microfluidic devices

    SciTech Connect

    Rosso, Michel; Steijn, Volkert van; Smet, Louis C. P. M. de; Sudhoelter, Ernst J. R.; Kreutzer, Michiel T.; Kleijn, Chris R.

    2011-04-25

    A self-similar reaction front develops in reactive ion etching when the ions penetrate channels of shallow height h. This relates to the patterning of microchannels using a single-step etching and bonding, as described by Rhee et al. [Lab Chip 5, 102 (2005)]. Experimentally, we report that the front location scales as x{sub f{approx}}ht{sup 1/2} and the width is time-invariant and scales as {delta}{approx}h. Mean-field reaction-diffusion theory and Knudsen diffusion give a semiquantitative understanding of these observations and allow optimization of etching times in relation to bonding requirements.

  12. Hydrogen uptake into silicon from an ECR plasma

    SciTech Connect

    Wampler, W.R.; Barbour, J.C.

    1993-12-01

    The concentration of hydrogen in solution near the surface of silicon exposed to an electron cyclotron resonance (ECR) plasma was determined by measuring the flux of hydrogen permeating to subsurface microcavities. The energy and flux of hydrogen impinging onto the surface from the plasma was also measured. A model is described which predicts the concentration of hydrogen in solution from the energy and flux of the impinging hydrogen. The measured solution concentrations were {approximately}10{sup {minus}9} H/Si at 600{degrees}C and {approximately}10{sup {minus}8} H/Si at 400{degrees}C, in fairly good agreement with the model. The absence of accumulation of immobile hydrogen near the surface indicates that lattice defects, which strongly trap hydrogen, were not produced by the ECR plasma. This study establishes a connection between the properties of the ECR plasma and the concentration of hydrogen in silicon samples exposed to the plasma, which allows improved control over passivation of defects and dopants.

  13. Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films

    PubMed Central

    Zhou, H. P.; Xu, M.; Xu, S.; Liu, L. L.; Liu, C. X.; Kwek, L. C.; Xu, L. X.

    2016-01-01

    Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based on high-density hydrogen plasma. A model integrating the three processes of hydrogen insertion, etching, and diffusion, which jointly determined the hydrogenation depth of the excess hydrogen into the treated micrometer thick a-Si:H, is proposed to elucidate the hydrogenation depth evolution and the crystallization mechanism. The effective temperature deduced from the hydrogen diffusion coefficient is far beyond the substrate temperature of 300 °C, which implies additional driving forces for crystallization, i.e., the chemical annealing/plasma heating and the high plasma sheath electric field. The features of LFICP (low-frequency inductively coupled plasma) and LFICP-grown a-Si:H are also briefly discussed to reveal the underlying mechanism of rapid crystallization at low temperatures. PMID:27600866

  14. Genotoxicity studies in semiconductor industry. 1. In vitro mutagenicity and genotoxicity studies of waste samples resulting from plasma etching

    SciTech Connect

    Braun, R.; Huettner, E.M.; Merten, H.; Raabe, F. )

    1993-07-01

    Solid waste samples taken from the etching reactor, the turbo pump, and the waste air system of a plasma etching technology line in semiconductor production were studied as to their genotoxic properties in a bacterial repair test, in the Ames/Salmonella microsome assay, in the SOS chromotest, in primary mouse hepatocytes, and in Chinese hamster V79 cell cultures. All three waste samples were found to be active by inducing of unscheduled DNA-synthesis in mouse hepatocytes in vitro. In the bacterial rec-type repair test with Proteus mirabilis, waste samples taken from the turbo pump and the vacuum pipe system were not genotoxic. The waste sample taken from the chlorine-mediated plasma reactor was clearly positive in the bacterial repair assay and in the SOS chromotest with Escherichia coli. Mutagenic activity was demonstrated for all samples in the presence and absence of S9 mix made from mouse liver homogenate. Again, highest mutagenic activity was recorded for the waste sample taken from the plasma reactor, while samples collected from the turbo pump and from the waste air system before dilution and liberation of the air were less mutagenic. For all samples chromosomal damage in V79 cells was not detected, indicating absence of clastogenic activity in vitro. Altogether, these results indicate generation of genotoxic and mutagenic products as a consequence of chlorine-mediated plasma etching in the microelectronics industry and the presence of genotoxins even in places distant from the plasma reactor. Occupational exposure can be expected both from the precipitated wastes and from chemicals reaching the environment with the air stream.

  15. High sensitivity hydrogen sensing with Pt-decorated porous gallium nitride prepared by metal-assisted electroless etching.

    PubMed

    Duan, Barrett K; Bohn, Paul W

    2010-05-01

    A unique hydrogen sensor structure based on Pt-decorated porous gallium nitride (PGaN) was fabricated by a two-step process consisting of metal-assisted electroless etching to produce PGaN with highly anisotropic pores followed by electroless deposition of Pt in the pores from an ammoniacal PtCl(6)(2-) solution. The Pt-decorated PGaN structure contains 50-100 nm diameter nanopores which are 400 nm to 1 microm deep and filled with Pt islands. Both electroless etching and deposition steps are done in solution and allow for large-scale production. An AC four-point probe conductivity measurement was implemented at f = 1 kHz, a frequency where the impedance of Pt-PGaN is nearly entirely resistive, and the change in conductance upon H(2) exposure was measured for three sample types: PGaN with a surface sputtered layer of Pt only; unetched GaN (CGaN) with both sputtered and electrolessly deposited Pt; and PGaN with both sputtered and electrolessly deposited Pt. The hydrogen sensing performance of the Pt-filled PGaN sensor was more than an order of magnitude better than either of the other two sample types under all experimental conditions, an observation attributed to the significant increase in Pt-GaN interfacial area in the electrolessly decorated PGaN samples, exhibiting a response to H2 concentrations as low as 1 ppm. The conductance changes are ascribed to adsorption-induced changes in interfacial polarization that produce changes in band bending and thus to the width of the space charge region near the Pt-GaN interface.

  16. Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation

    NASA Astrophysics Data System (ADS)

    Tinck, Stefan; Tillocher, Thomas; Dussart, Rémi; Neyts, Erik C.; Bogaerts, Annemie

    2016-09-01

    Experiments show that the etch rate of Si with SF6 inductively coupled plasma (ICP) is significantly influenced by the absolute gas flow rate in the range of 50-600 sccm, with a maximum at around 200 sccm. Therefore, we numerically investigate the effects of the gas flow rate on the bulk plasma properties and on the etch rate, to obtain more insight in the underlying reasons of this effect. A hybrid Monte Carlo—fluid model is applied to simulate an SF6 ICP. It is found that the etch rate is influenced by two simultaneous effects: (i) the residence time of the gas and (ii) the temperature profile of the plasma in the ICP volume, resulting indeed in a maximum etch rate at 200 sccm.

  17. Effect of argon addition on plasma parameters and dust charging in hydrogen plasma

    SciTech Connect

    Kakati, B. Kausik, S. S.; Saikia, B. K.; Bandyopadhyay, M.; Saxena, Y. C.

    2014-10-28

    Experimental results on effect of adding argon gas to hydrogen plasma in a multi-cusp dusty plasma device are reported. Addition of argon modifies plasma density, electron temperature, degree of hydrogen dissociation, dust current as well as dust charge. From the dust charging profile, it is observed that the dust current and dust charge decrease significantly up to 40% addition of argon flow rate in hydrogen plasma. But beyond 40% of argon flow rate, the changes in dust current and dust charge are insignificant. Results show that the addition of argon to hydrogen plasma in a dusty plasma device can be used as a tool to control the dust charging in a low pressure dusty plasma.

  18. Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching

    SciTech Connect

    Yap, K.P.; Lamontagne, B.; Delage, A.; Janz, S.; Bogdanov, A.; Picard, M.; Post, E.; Chow-Chong, P.; Malloy, M.; Roth, D.; Marshall, P.; Liu, K.Y.; Syrett, B.

    2006-05-15

    We present a technique to lithographically define and fabricate all required optical facets on a silicon-on-insulator photonic integrated circuit by an inductively coupled plasma etch process. This technique offers 1 {mu}m positioning accuracy of the facets at any location within the chip and eliminates the need of polishing. Facet fabrication consists of two separate steps to ensure sidewall verticality and minimize attack on the end surfaces of the waveguides. Protection of the waveguides by a thermally evaporated aluminum layer before the 40-70 {mu}m deep optical facet etching has been proven essential in assuring the facet smoothness and integrity. Both scanning electron microscopy analysis and optical measurement results show that the quality of the facets prepared by this technique is comparable to the conventional facets prepared by polishing.

  19. Plasma-chemical conversion of hydrogen sulfide into hydrogen and sulfur

    SciTech Connect

    Harkness, J.B.L.; Doctor, R.D.; Daniels, E.J.

    1993-09-01

    A waste-treatment process that recovers both hydrogen and sulfur from hydrogen-sulfide-contaminated industrial wastes is being developed to replace the Claus technology, which recovers only sulfur. The proposed process is based on research reported in the Soviet technical literature and uses microwave (or radio-frequency) energy to initiate plasma-chemical reactions that dissociate hydrogen sulfide into elemental hydrogen and sulfur. In the plasma-chemical process, the gaseous stream would be purified and separated into streams containing the product hydrogen, hydrogen sulfide for recycle to the plasma reactor, and the process purge containing carbon dioxide and water. Since unconverted hydrogen sulfide is recycled to the plasma reactor, the plasma-chemical process has the potential for sulfur recoveries in excess of 99% without the additional tail-gas clean-up processes associated with the Claus technology. Laboratory experiments with pure hydrogen sulfide have confirmed that conversions of over 90% per pass are possible. Experiments with impurities typical of petroleum refinery and natural gas production acid gases have demonstrated that these impurities are compatible with the plasma dissociation process and do not appear to create new waste-treatment problems. Other experiments show that the cyclonic-flow pattern hypothesized by the Russian theoretical analysis of the plasma-chemical process can substantially decrease energy requirements for hydrogen sulfide dissociation while increasing conversion. This process has several advantages over the current Claus-plus-tail-gas-cleanup technology. The primary advantage is the potential for recovering hydrogen more cheaply than the direct production of hydrogen. The difference could amount to an energy savings of 40 {times} 10{sup 15} to 70 {times} 10{sup 15} J/yr in the refining industry, for an annual savings of $500 million to $1,000 million.

  20. Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique

    NASA Astrophysics Data System (ADS)

    Jinnai, Butsurin; Fukuda, Seiichi; Ohtake, Hiroto; Samukawa, Seiji

    2010-02-01

    UV radiation during plasma processing affects the surface of materials. Nevertheless, the interaction of UV photons with surface is not clearly understood because of the difficulty in monitoring photons during plasma processing. For this purpose, we have previously proposed an on-wafer monitoring technique for UV photons. For this study, using the combination of this on-wafer monitoring technique and a neural network, we established a relationship between the data obtained from the on-wafer monitoring technique and UV spectra. Also, we obtained absolute intensities of UV radiation by calibrating arbitrary units of UV intensity with a 126 nm excimer lamp. As a result, UV spectra and their absolute intensities could be predicted with the on-wafer monitoring. Furthermore, we developed a prediction system with the on-wafer monitoring technique to simulate UV-radiation damage in dielectric films during plasma etching. UV-induced damage in SiOC films was predicted in this study. Our prediction results of damage in SiOC films shows that UV spectra and their absolute intensities are the key cause of damage in SiOC films. In addition, UV-radiation damage in SiOC films strongly depends on the geometry of the etching structure. The on-wafer monitoring technique should be useful in understanding the interaction of UV radiation with surface and in optimizing plasma processing by controlling UV radiation.

  1. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    NASA Astrophysics Data System (ADS)

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  2. Microwave plasma generation of hydrogen atoms for rocket propulsion

    NASA Technical Reports Server (NTRS)

    Chapman, R.; Filpus, J.; Morin, T.; Snellenberger, R.; Asmussen, J.; Hawley, M.; Kerber, R.

    1981-01-01

    A flow microwave plasma reaction system is used to study the conversion of hydrogen to hydrogen atoms as a function of pressure, power density, cavity tuning, cavity mode, and time in the plasma zone. Hydrogen atom concentration is measured down-stream from the plasma by NOCl titration. Extensive modeling of the plasma and recombination zones is performed with the plasma zone treated as a backmix reaction system and the recombination zone treated as a plug flow. The thermodynamics and kinetics of the recombination process are examined in detail to provide an understanding of the conversion of recombination energy to gas kinetic energy. It is found that cavity tuning, discharge stability, and optimum power coupling are critically dependent on the system pressure, but nearly independent of the flow rate.

  3. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

    NASA Astrophysics Data System (ADS)

    Hao, Ronghui; Fu, Kai; Yu, Guohao; Li, Weiyi; Yuan, Jie; Song, Liang; Zhang, Zhili; Sun, Shichuang; Li, Xiajun; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

    2016-10-01

    In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

  4. Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates

    NASA Astrophysics Data System (ADS)

    Nakazaki, Nobuya; Matsumoto, Haruka; Eriguchi, Koji; Ono, Kouichi

    2015-09-01

    In the microfabrication of 3D transistors (e.g. Fin-FET), the sidewall roughness, such as LER and LWR caused by off-normal or oblique ion incidence during plasma etching, is a critical issue to be resolved, which in turn requires a better understanding of the effects of ion incidence angle θi on surface roughening. This paper presents surface roughening and rippling by oblique ion incidence during inductively coupled plasma etching of Si in Cl2, using the experimental setup as in our previous study. The oblique ion incidence was achieved by sheath control plates, which were placed on and electrically connected to the wafer stage. The plates had slits to vary the sheath structure thereon and to extract ions from plasma to samples on the bottom and/or side of the slits. The results indicated that at θi ~ 40° or oblique incidence; ripple structures were formed on surfaces perpendicularly to the direction of ion incidence, on the other hand, at θi ~ 80° or grazing incidence, small ripples or slit like grooves were formed on surfaces parallel to the direction of ion incidence, as predicted in our previous numerical investigations.

  5. Hydrogen Generation from the Dissociation of Water Using Microwave Plasmas

    NASA Astrophysics Data System (ADS)

    Yong, Ho Jung; Soo Ouk, Jang; Hyun Jong, You

    2013-06-01

    Hydrogen is produced by direct dissociation of water vapor, i.e., splitting water molecules by the electrons in water plasma at low pressure (<10-50 Torr) using microwave plasma discharge. This condition generates a high electron temperature, which facilitates the direct dissociation of water molecules. A microwave plasma source is developed, utilizing the magnetron of a microwave oven and a TE10 rectangular waveguide. The quantity of the generated hydrogen is measured using a residual gas analyzer. The electron density and temperature are measured by a Langmuir probe, and the neutral temperature is calculated from the OH line intensity.

  6. A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

    NASA Astrophysics Data System (ADS)

    Sui, Jiaxing; Zhang, Saiqian; Liu, Zeng; Yan, Jun; Dai, Zhongling

    2016-06-01

    A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO2 in inductively coupled C4F8 plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-ACE+ commercial software. Then, the ion energy and angular distributions (IEDs and IADs) are obtained in the sheath model with the sheath boundary conditions provided with CFD-ACE+. Finally, the trench profile evolution is simulated in the trench model. What we principally focus on is the effects of the discharge parameters on the etching results. It is found that the discharge parameters, including discharge pressure, radio-frequency (rf) power, gas mixture ratios, bias voltage and frequency, have synergistic effects on IEDs and IADs on the etched material surface, thus further affecting the trench profiles evolution. supported by National Natural Science Foundation of China (No. 11375040) and the Important National Science & Technology Specific Project of China (No. 2011ZX02403-002)

  7. Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.

    PubMed

    James, Teena; Kalinin, Yevgeniy V; Chan, Chih-Chieh; Randhawa, Jatinder S; Gaevski, Mikhail; Gracias, David H

    2012-07-11

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP)-assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and cone-angles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations.

  8. Energy loss of heavy ions in a dense hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Dietrich, K.-G.; Hoffmann, D. H. H.; Wahl, H.; Haas, C. R.; Kunze, H.; Brandenburg, W.; Noll, R.

    1990-12-01

    The energy loss of heavy ions with an energy of 1.4 MeV/u in a hydrogen plasma has been measured. A 20 cm long z-pinch has been used as plasma target. Our data show a strong enhancement of the stopping power of the plasma compared to that of a cold gas with equal density. The results completely confirm the predictions of the standard stopping power model.

  9. Resonances in positron-hydrogen scattering in dense quantum plasmas

    SciTech Connect

    Jiang, Zishi; Zhang, Yong-Zhi; Kar, Sabyasachi

    2015-05-15

    We have investigated the S-wave resonance states in positron-hydrogen system embedded in dense quantum plasmas using Hylleraas-type wave functions within the framework of the stabilization method. The effect of quantum plasmas has been incorporated using the exponential-cosine-screened Coulomb (modified Yukawa-type) potential. Resonance parameters (both position and width) below the Ps n = 2 threshold are reported as functions of plasma screening parameters.

  10. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

    PubMed

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L; Joseph, Eric A; Oehrlein, Gottlieb S

    2017-02-07

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar(+) ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar(+) ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  11. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    NASA Astrophysics Data System (ADS)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2017-02-01

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  12. Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C4F8 and Ar/CHF3 Plasma

    DOE PAGES

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

    2016-09-08

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32, 020603 (2014), and D.more » Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are

  13. Elements for hard X-ray optics produced by cryogenic plasma etching of silicon

    NASA Astrophysics Data System (ADS)

    Miakonkikh, Andrey V.; Rogozhin, Alexander E.; Rudenko, Konstantin V.; Lukichev, Vladimir F.; Yunkin, Vyacheslav A.; Snigirev, Anatoly A.

    2016-12-01

    A number of different hard X-ray optics elements such as refractive lenses, refractive bi-lenses and multilens interferometers, mirror interferometers can be made of Silicon. The optical performance of these elements depends on the quality of refracting and reflecting surfaces. Cryogenic deep anisotropic etching was proposed for fabrication of parabolic planar lenses and mirror interferometers. The investigation of sidewall roughness was done by AFM and by optical interferometry. Geometrical parameters of structures were measured by SEM. It was observed that roughness of inner sidewalls of etched structures does not exceed 3 nm/um (RMS) and deviation from vertical profile was within 30 nm along 20 um depth.

  14. Investigation of InP etching mechanisms in a Cl{sub 2}/H{sub 2} inductively coupled plasma by optical emission spectroscopy

    SciTech Connect

    Gatilova, L.; Bouchoule, S.; Guilet, S.; Chabert, P.

    2009-03-15

    Optical emission spectroscopy (OES) has been used in order to investigate the InP etching mechanisms in a Cl{sub 2}-H{sub 2} inductively coupled plasma. The authors have previously shown that anisotropic etching of InP could be achieved for a H{sub 2} percentage in the 35%-45% range where the InP etch rate also presents a local maximum [J. Vac. Sci. Technol. B 24, 2381 (2006)], and that anisotropic etching was due to an enhanced passivation of the etched sidewalls by a silicon oxide layer [J. Vac. Sci. Technol. B 26, 666 (2008)]. In this work, it is shown that this etching behavior is related to a maximum in the H atom concentration in the plasma. The possible enhancement of the sidewall passivation process in the presence of H is investigated by comparing OES measurements and etching results obtained for Cl{sub 2}-H{sub 2} and Cl{sub 2}-Ar gas mixtures.

  15. Effect of Cl{sub 2}- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

    SciTech Connect

    Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

    2012-05-15

    A Cl{sub 2}-HBr-O{sub 2}/Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ({approx}600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO{sub x} passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl{sub 2}-based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be {approx}1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl{sub 2}-based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl{sub 2}-based ICP etching for the recovery of the InP material.

  16. Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application

    SciTech Connect

    Lee, J. H.; Kim, M. J.; Yoon, Y. S.

    2013-04-15

    The floating harmonic method was developed for in situ plasma diagnostics of allowing real time measurement of electron temperature (T{sub e}) and ion flux (J{sub ion}) without contamination of the probe from surface modification by reactive species. In this study, this novel non-invasive diagnostic system was studied to characterize inductively coupled plasma of reactive gases monitoring T{sub e} and J{sub ion} for investigating the optimum plasma etching conditions and controlling of the real-time plasma surface reaction in the range of 200-900 W source power, 10-100 W bias power, and 3-15 mTorr chamber pressure, respectively.

  17. In-situ monitoring of etching of bovine serum albumin using low-temperature atmospheric plasma jet

    NASA Astrophysics Data System (ADS)

    Kousal, J.; Shelemin, A.; Kylián, O.; Slavínská, D.; Biederman, H.

    2017-01-01

    Bio-decontamination of surfaces by means of atmospheric pressure plasma is nowadays extensively studied as it represents promising alternative to commonly used sterilization/decontamination techniques. The non-equilibrium atmospheric pressure plasmas were already reported to be highly effective in removal of a wide range of biological residual from surfaces. Nevertheless the kinetics of removal of biological contamination from surfaces is still not well understood as the majority of performed studies were based on ex-situ evaluation of etching rates, which did not allow investigating details of plasma action on biomolecules. This study therefore presents a real-time, in-situ ellipsometric characterization of removal of bovine serum albumin (BSA) from surfaces by low-temperature atmospheric plasma jet operated in argon. Non-linear and at shorter distances between treated samples and nozzle of the plasma jet also non-monotonic dependence of the removal rate on the treatment duration was observed. According to additional measurements focused on the determination of chemical changes of treated BSA as well as temperature measurements, the observed behavior is most likely connected with two opposing effects: the formation of a thin layer on the top of BSA deposit enriched in inorganic compounds, whose presence causes a gradual decrease of removal efficiency, and slight heating of BSA that facilitates its degradation and volatilization induced by chemically active radicals produced by the plasma.

  18. An experimental study of laser supported hydrogen plasmas

    NASA Technical Reports Server (NTRS)

    Vanzandt, D. M.; Mccay, T. D.; Eskridge, R. H.

    1984-01-01

    The rudiments of a rocket thruster which receives its enthalpy from an energy source which is remotely beamed from a laser is described. An experimental study now partially complete is discussed which will eventually provide a detailed understanding of the physics for assessing the feasibility of using hydrogen plasmas for accepting and converting this energy to enthalpy. A plasma ignition scheme which uses a pulsed CO2 laser has been developed and the properties of the ignition spark documented, including breakdown intensities in hydrogen. A complete diagnostic system capable of determining plasma temperature and the plasma absorptivity for subsequent steady state absorption of a high power CO2 laser beam are developed and demonstrative use is discussed for the preliminary case study, a two atmosphere laser supported argon plasma.

  19. Plasma-Surface Interactions of Hydrogenated Carbon

    DTIC Science & Technology

    2009-01-01

    with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1...rate of progress in the area of tritium re- moval, together with favorable results from divertor tokamaks with high atomic number (e.g. tungsten) walls...hydrogen ions and thermal atomic hydrogen, both for pure carbon as well as mixed materials systems . Properly bench- marked molecular dynamics (MD

  20. Etch Challenges Brought by the Metal Hardmask Approach for Advanced Contact Patterning with Fluorocarbon-based Plasma

    NASA Astrophysics Data System (ADS)

    de Marneffe, Jean-Francois; Goossens, Danny; Shamiryan, Denis; Struyf, Herbert; Boullart, Werner

    2008-10-01

    In order to overcome patterning challenges brought by dimensional scaling and aggressive pitches, extreme ultra-violet (EUV) lithography has been recently pushed forward as a possible solution for IC manufacturing, allowing extended exposure latitude at sub-50nm dimensions. This work address the technological solutions used for contact holes patterning by means of EUV lithography. A metal hard-mask (MHM) approach has been selected, in order to combine the etching of high-aspect ratio features with thin EUV photoresist. The pre-metal dielectric stack covering the active fins was composed of 15nm Si3N4 as an etch-stop liner, covered by 240nm SiO2. The MHM was made of a 30nm TiN film on top of which was spun 20nm of organic underlayer and 100nm of EUV photoresist. This presentation will describe in details the various plasma processing issues and challenges met with this patterning strategy, for down to ˜50nm contact hole sizes: SiO2:TiN and SiO2:Si3N4 selectivities by means of fluorocarbon-based chemistries; loading effects; profile and mask undercut control with CCP plasma; residue cleaning.

  1. High Power Ion Heating in Helium and Hydrogen Plasmas for Advanced Plasma Thrusters

    NASA Astrophysics Data System (ADS)

    Ando, Akira; Hagiwara, Tatsuya; Domon, Masakazu; Taguchi, Takahiro

    High power ion cyclotron resonance heating is performed in a fast-flowing plasma operated with hydrogen and helium gases. Ion heating is clearly observed in hydrogen plasma as well as in helium plasma. The resonance region of magnetic field is broader and wave absorption efficiency is higher in hydrogen plasma than those in helium plasma. The thermal energy of the heated ions is converted to the kinetic energy of the exhaust plume by passing through a diverging magnetic nozzle set in a downstream region. In the magnetic nozzle energy conversion occurred as keeping the magnetic moment constant, but some discrepancy was observed in larger gradient of magnetic field. The kinetic energy of the exhaust plume is successfully controlled by an input power of radio-frequency wave, which is one of the key technologies for the Variable Specific Impulse Magnetoplasma Rocket (VASIMR) type plasma thruster.

  2. An interatomic potential model for molecular dynamics simulation of silicon etching by Br{sup +}-containing plasmas

    SciTech Connect

    Ohta, H.; Iwakawa, A.; Eriguchi, K.; Ono, K.

    2008-10-01

    An interatomic potential model for Si-Br systems has been developed for performing classical molecular dynamics (MD) simulations. This model enables us to simulate atomic-scale reaction dynamics during Si etching processes by Br{sup +}-containing plasmas such as HBr and Br{sub 2} plasmas, which are frequently utilized in state-of-the-art techniques for the fabrication of semiconductor devices. Our potential form is based on the well-known Stillinger-Weber potential function, and the model parameters were systematically determined from a database of potential energies obtained from ab initio quantum-chemical calculations using GAUSSIAN03. For parameter fitting, we propose an improved linear scheme that does not require any complicated nonlinear fitting as that in previous studies [H. Ohta and S. Hamaguchi, J. Chem. Phys. 115, 6679 (2001)]. In this paper, we present the potential derivation and simulation results of bombardment of a Si(100) surface using a monoenergetic Br{sup +} beam.

  3. Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

    SciTech Connect

    King, Sean W. Tanaka, Satoru; Davis, Robert F.; Nemanich, Robert J.

    2015-09-15

    Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and

  4. Pulsed two-frequency capacitively coupled plasma simulation with H_2/N2 mixtures for the etching of low-k materials

    NASA Astrophysics Data System (ADS)

    Shon, C. H.; Makabe, T.

    2002-10-01

    As the critical dimension of integrated circuit is scaled down, the resistance-capacitance (RC) delay of signals through interconnection materials becomes important. As a solution, the new materials like Cu and low-k dielectric polymers have been used to reduce the signal delay in interconnect. As a result, low-k materials etching becomes a big issue in the plasma etching process. In this research, we present the simulation results of a pulsed two-frequency capacitively coupled plasma (2f-CCP)[1,2] based on relaxation continuum (RCT) model[3,4] in H_2/N2 mixtures. The electrons, ions of each gas and NHx radicals are followed in the model. The characteristics of a pulsed plasma are investigated. In addition, the flux of ions and radicals toward the biased substrate which has great importance in etching process is also discussed. sep = -1mm [[1

  5. Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma

    NASA Astrophysics Data System (ADS)

    Ham, Yong-Hyun; Efremov, Alexander; Lee, Hyun-Woo; Yun, Sun Jin; Min, Nam Ki; Kim, Kwangsoo; Kwon, Kwang-Ho

    2010-08-01

    The etching characteristics and mechanisms of ZnO and Ga-doped ZnO (Ga-ZnO) thin films in a HBr/Ar/CHF3 inductively coupled plasma were investigated. The etching rate of ZnO was measured as a function of the CHF3 mixing ratio in the range of 0-15% in a HBr:Ar = 5:2 plasma at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (50 sccm). The plasma chemistry was analyzed by a combination of the global (zero-dimensional) plasma model, Langmuir probe diagnostics (LP) and quadrupole mass spectrometer (QMS) analysis. It was found that the densities of both HBr and Br are significantly affected by the reactions with the CHF3 dissociation products, while both the ZnO and Ga-ZnO etching rates follow the behavior of the Br atom density and flux. This suggests that the ZnO and Ga-ZnO etching processes are not limited by the ion-surface interaction kinetics and appear in the reaction-rate-limited etching regime.

  6. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    DOE PAGES

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Othermore » critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

  7. Hydrogen Evolution by Plasma Electrolysis in Aqueous Solution

    NASA Astrophysics Data System (ADS)

    Mizuno, Tadahiko; Akimoto, Tadashi; Azumi, Kazuhisa; Ohmori, Tadayoshi; Aoki, Yoshiaki; Takahashi, Akito

    2005-01-01

    Hydrogen has recently attracted attention as a possible solution to environmental and energy problems. If hydrogen should be considered an energy storage medium rather than a natural resource. However, free hydrogen does not exist on earth. Many techniques for obtaining hydrogen have been proposed. It can be reformulated from conventional hydrocarbon fuels, or obtained directly from water by electrolysis or high-temperature pyrolysis with a heat source such as a nuclear reactor. However, the efficiencies of these methods are low. The direct heating of water to sufficiently high temperatures for sustaining pyrolysis is very difficult. Pyrolysis occurs when the temperature exceeds 4000°C. Thus plasma electrolysis may be a better alternative, it is not only easier to achieve than direct heating, but also appears to produce more hydrogen than ordinary electrolysis, as predicted by Faraday’s laws, which is indirect evidence that it produces very high temperatures. We also observed large amounts of free oxygen generated at the cathode, which is further evidence of direct decomposition, rather than electrolytic decomposition. To achieve the continuous generation of hydrogen with efficiencies exceeding Faraday efficiency, it is necessary to control the surface conditions of the electrode, plasma electrolysis temperature, current density and input voltage. The minimum input voltage required induce the plasma state depends on the density and temperature of the solution, it was estimated as 120 V in this study. The lowest electrolyte temperature at which plasma forms is ˜75°C. We have observed as much as 80 times more hydrogen generated by plasma electrolysis than by conventional electrolysis at 300 V.

  8. Plasma promoted manufacturing of hydrogen and vehicular applications

    NASA Astrophysics Data System (ADS)

    Bromberg, Leslie

    2003-10-01

    Plasmas can be used for promoting reformation of fuels. Plasma-based reformers developed at MIT use a low temperature, low power, low current electrical discharge to promote partial oxidation conversion of hydrocarbon fuels into hydrogen and CO. The very fuel rich mixture is hard to ignite, and the plasmatron provides a volume-ignition. To minimize erosion and to simplify the power supply, a low current high voltage discharge is used, with wide area electrodes. The plasmatron fuel reformer operates at or slightly above atmospheric pressure. The plasma-based reformer technology provides the advantages of rapid startup and transient response; efficient conversion of the fuel to hydrogen rich gas; compact size; relaxation or elimination of reformer catalyst requirements; and capability to process difficult to reform fuels. These advantages enable use of hydrogen-manufacturing reformation technology in cars using available fuels, such as gasoline and diesel. This plasma-based reformer technology can provide substantial throughputs even without the use of a catalyst. The electrical power consumption of the device is minimized by design and operational characteristics (less than 500 W peak and 200 W average). The product from these plasma reactors is a hydrogen rich mixture that can be used for combustion enhancement and emissions aftertreatment in vehicular applications. By converting a small fraction of the fuel to hydrogen rich gas, in-cylinder combustion can be improved. With minor modification of the engine, use of hydrogen rich gas results in increased fuel efficiency and decreased emissions of smog producing gases. The status of plasma based reformer technology and its application to vehicles will be described.

  9. Study of surface reactions in plasma etching using mass-analyzed ion beams

    NASA Astrophysics Data System (ADS)

    Karahashi, Kazuhiro

    2001-10-01

    We have constructed a new mass-analyzed low-energy ion beam etching apparatus (MALIEA) for investigate desorption products from silicon or silicon dioxide surfaces during CFx+ (x=1-3) ion bombardments. In this paper, we describe this newly developed ion beam apparatus, and results of CF3+ ion bombardment experiments. The apparatus consists of an ion beam source, an ultra high vacuum (UHV) process chamber, and a detector chamber. As there are three differentially pumping stages between the source and process chamber, the process chamber was maintained at UHV condition during all experiments. Therefore, experiments were not affected by contaminations form the ion source. Pure ion beams such as F+, CF+, CF2+ and CF3+, were obtained with good mass resolutions by a 90\\x81‹ mass-selecting electromagnet. The sample is mounted on a manipulator, located at the foci of a hemispherical energy analyzer and x-ray sources to allow chemical analysis of irradiated surfaces. The desorption products and scattered ions were detected by a rotatable differentially pumped quadrupole mass spectrometer (QMS). In experiments of CF3+ irradiation on silicon dioxide surface\\x81@at 1000eV, etching rate was about 1.1 atoms/ion, and silicon flourides for etching products were detected by QMS. Therefore, it is possible to investigate the interaction between silicon or silicon dioxide surfaces and low-energy CFx+(x=1-3) ions with a well-defined energy. This work was supported by NEDO.

  10. Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

    NASA Astrophysics Data System (ADS)

    Lee, Changwoo; Nagabhirava, Bhaskar; Goss, Michael; Wang, Peng; Friddle, Phil; Schmitz, Stafan; Wu, Jian; Yang, Richard; Mignot, Yann; Rassoul, Nouradine; Hamieh, Bassem; Beique, Genevieve; Labonte, Andre; Labelle, Catherine; Arnold, John; Mucci, John

    2015-03-01

    As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC). In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

  11. Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl2 plasma etching of GaN

    NASA Astrophysics Data System (ADS)

    Liu, Zecheng; Pan, Jialin; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2017-02-01

    The minimization of plasma-induced damage (PID) in plasma etching is important for the precise and smooth removal of a depth of approximately 7 nm of GaN films to fabricate gate-recess GaN-based normally-off power electronic devices. We have systematically studied the photoluminescence (PL) properties and surface morphologies of GaN films exposed to Cl2 plasma at 400 °C, focusing on their dependences on etch time and ion energy. It is noticeable that PL degradation saturated at etch times of more than 2 min, while surface roughness increased continuously with etch time. Variations of surface roughness with bias voltage were negligible. PID was successfully suppressed by reducing bias voltage, leading to the decrease in incident ion energy on the surface, and thus the near-band-edge emission (NBE) intensity as a PL property was increased to 98.8% of the initial value.

  12. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns.

    PubMed

    Liu, Zuwei; Gu, Xiaodan; Hwu, Justin; Sassolini, Simone; Olynick, Deirdre L

    2014-07-18

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature's shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

  13. Plasma etched surface scanning inspection recipe creation based on bidirectional reflectance distribution function and polystyrene latex spheres

    NASA Astrophysics Data System (ADS)

    Saldana, Tiffany; McGarvey, Steve; Ayres, Steve

    2014-04-01

    The continual increasing demands upon Plasma Etching systems to self-clean and continue Plasma Etching with minimal downtime allows for the examination of SiCN, SiO2 and SiN defectivity based upon Surface Scanning Inspection Systems (SSIS) wafer scan results. Historically all Surface Scanning Inspection System wafer scanning recipes have been based upon Polystyrene Spheres wafer deposition for each film stack and the subsequent creation of light scattering sizing response curves. This paper explores the feasibility of the elimination of Polystyrene Latex Sphere (PSL) and/or process particle deposition on both filmed and bare Silicon wafers prior to Surface Scanning Inspection System recipe creation. The study will explore the theoretical maximal Surface Scanning Inspection System sensitivity based on PSL recipe creation in conjunction with the maximal sensitivity derived from Bidirectional Reflectance Distribution Function (BRDF) maximal sensitivity modeling recipe creation. The surface roughness (Root Mean Square) of plasma etched wafers varies dependent upon the process film stack. Decrease of the root mean square value of the wafer sample surface equates to higher surface scanning inspection system sensitivity. Maximal sensitivity SSIS scan results from bare and filmed wafers inspected with recipes created based upon Polystyrene/Particle Deposition and recipes created based upon BRDF modeling will be overlaid against each other to determine maximal sensitivity and capture rate for each type of recipe that was created with differing recipe creation modes. A statistically valid sample of defects from each Surface Scanning Inspection system recipe creation mode and each bare wafer/filmed substrate will be reviewed post SSIS System processing on a Defect Review Scanning Electron Microscope (DRSEM). Native defects, Polystyrene Latex Spheres will be collected from each statistically valid defect bin category/size. The data collected from the DRSEM will be utilized to

  14. Negative hydrogen ion yields at plasma grid surface in a negative hydrogen ion source

    SciTech Connect

    Wada, M.; Kenmotsu, T.; Sasao, M.

    2015-04-08

    Negative hydrogen (H{sup −}) ion yield from the plasma grid due to incident hydrogen ions and neutrals has been evaluated with the surface collision cascade model, ACAT (Atomic Collision in Amorphous Target) coupled to a negative surface ionization models. Dependence of negative ion fractions upon the velocity component normal to the surface largely affect the calculation results of the final energy and angular distributions of the H{sup −} ions. The influence is particularly large for H{sup −} ions desorbed from the surface due to less than several eV hydrogen particle implact. The present calculation predicts that H{sup −} ion yield can be maximized by setting the incident angle of hydrogen ions and neutrals to be 65 degree. The Cs thickness on the plasma grid should also affect the yields and mean energies of surface produced H{sup −} ions by back scattering and ion induced desorption processes.

  15. Negative hydrogen ion yields at plasma grid surface in a negative hydrogen ion source

    NASA Astrophysics Data System (ADS)

    Wada, M.; Kenmotsu, T.; Sasao, M.

    2015-04-01

    Negative hydrogen (H-) ion yield from the plasma grid due to incident hydrogen ions and neutrals has been evaluated with the surface collision cascade model, ACAT (Atomic Collision in Amorphous Target) coupled to a negative surface ionization models. Dependence of negative ion fractions upon the velocity component normal to the surface largely affect the calculation results of the final energy and angular distributions of the H- ions. The influence is particularly large for H- ions desorbed from the surface due to less than several eV hydrogen particle implact. The present calculation predicts that H- ion yield can be maximized by setting the incident angle of hydrogen ions and neutrals to be 65 degree. The Cs thickness on the plasma grid should also affect the yields and mean energies of surface produced H- ions by back scattering and ion induced desorption processes.

  16. Three-Dimensional Polymeric Mechanical Metamaterials Fabricated by Multibeam Interference Lithography with the Assistance of Plasma Etching.

    PubMed

    Kang, Da-Young; Lee, Wooju; Kim, Dongchoul; Moon, Jun Hyuk

    2016-08-23

    The pentamode structure is a type of mechanical metamaterial that displays dramatically different bulk and shear modulus responses. In this study, a face-centered cubic (FCC) polymeric microstructure was fabricated by using SU8 negative-type photoresists and multibeam interference exposure. Isotropic plasma etching is used to control the solid-volume fraction; for the first time, we obtained a structure with the minimum solid-volume fraction as low as 15% that still exhibited high structural integrity. Using this method, we reduced the width of atom-to-atom connections by up to 40 nm. We characterize the effect of the connection area on the anisotropy of the mechanical properties using simulations. Nanoindentation measurements were also conducted to evaluate the energy dissipation by varying the connection area. The Young's/shear modulus ratio is 5 times higher for the etched microstructure than that of the bulk SU8 materials. The use of interference lithography may enable the properties of microscale materials to be engineered for various applications, such as MEMS.

  17. A structure zone diagram including plasma based deposition and ion etching

    SciTech Connect

    Anders, Andre

    2009-10-14

    An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

  18. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    NASA Astrophysics Data System (ADS)

    Yeh, Chia-Pin; Lisker, Marco; Kalkofen, Bodo; Burte, Edmund P.

    2016-08-01

    Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  19. Positron scattering from hydrogen atom embedded in dense quantum plasma

    SciTech Connect

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2013-08-15

    Scattering of positrons from the ground state of hydrogen atoms embedded in dense quantum plasma has been investigated by applying a formulation of the three-body collision problem in the form of coupled multi-channel two-body Lippmann-Schwinger equations. The interactions among the charged particles in dense quantum plasma have been represented by exponential cosine-screened Coulomb potentials. Variationally determined hydrogenic wave function has been employed to calculate the partial-wave scattering amplitude. Plasma screening effects on various possible mode of fragmentation of the system e{sup +}+H(1s) during the collision, such as 1s→1s and 2s→2s elastic collisions, 1s→2s excitation, positronium formation, elastic proton-positronium collisions, have been reported in the energy range 13.6-350 eV. Furthermore, a comparison has been made on the plasma screening effect of a dense quantum plasma with that of a weakly coupled plasma for which the plasma screening effect has been represented by the Debye model. Our results for the unscreened case are in fair agreement with some of the most accurate results available in the literature.

  20. Coupled multigroup cross sections for hydrogen interactions in plasmas

    NASA Astrophysics Data System (ADS)

    Wienke, B. R.; Morel, J. E.; Cayton, T. E.; Howell, R. B.

    1985-10-01

    Using analytical fits to the experimental cross sections for H 3 H 2, and H 2+ interactions in plasmas, developed by Gryzinski, Riviere, Jones, and Freeman, we obtain coupled multigroup cross sections and rate coefficients for hydrogen transport applications. Multigroup cross sections and rate coefficients, for specified energy group boundaries, plasma particle and temperature profiles, and cylindrical plasma confinement radius, are generated against a spatially dependent, local Maxwellian scattering background. Cross sections are formatted for direct use in production multigroup S n, Monte Carlo, or specific transport applications. Ten coupled hydrogen reactions are included and resulting cross sections for ionization, scattering, and production can be coupled or decoupled. Reactions treated include H, H 2 ionization by electrons and protons, H, H 2 charge exchange, and H 2, H 2+ dissociative mechanisms. We detail the formalism used to compute effective cross sections and rates and give practicle results for two fusion reactors.

  1. Two-temperature modeling of laser sustained hydrogen plasmas

    NASA Astrophysics Data System (ADS)

    Mertogul, Ayhan E.; Krier, Herman

    1994-10-01

    A kinetic nonequilibrium model of laser sustained hydrogen plasmas has been formulated and solved for the prediction of steady-state energy transport processes. This model is the first of its kind and includes a discretized beam ray-trace with a variable index of refraction based upon plasma electron number density for a 10.6-micron CO2 laser input. Model results for fraction of incident laser power absorbed, and fraction of incident laser power retained by the hydrogen gas have compared favorably with experimental results. The model has been used to provide predictions of laser sustained plasma (LSP) performance well outside the realm of experiments to incident powers as high as 700 kW. At the gas pressures studied, minimal kinetic nonequilibrium was observed in LSP core regions, even for 700-kW laser power.

  2. Charge transfer in proton-hydrogen collisions under Debye plasma

    SciTech Connect

    Bhattacharya, Arka; Kamali, M. Z. M.; Ghoshal, Arijit; Ratnavelu, K.

    2015-02-15

    The effect of plasma environment on the 1s → nlm charge transfer, for arbitrary n, l, and m, in proton-hydrogen collisions has been investigated within the framework of a distorted wave approximation. The effect of external plasma has been incorporated using Debye screening model of the interacting charge particles. Making use of a simple variationally determined hydrogenic wave function, it has been possible to obtain the scattering amplitude in closed form. A detailed study has been made to investigate the effect of external plasma environment on the differential and total cross sections for electron capture into different angular momentum states for the incident energy in the range of 20–1000 keV. For the unscreened case, our results are in close agreement with some of the most accurate results available in the literature.

  3. Hydrogen production from dimethyl ether using corona discharge plasma

    NASA Astrophysics Data System (ADS)

    Zou, Ji-Jun; Zhang, Yue-Ping; Liu, Chang-Jun

    Dimethyl ether (DME), with its non-toxic character, high H/C ratio and high-energy volumetric density, is an ideal resource for hydrogen production. In this work, hydrogen production from the decomposition of DME using corona discharge has been studied. The corona discharge plasma decomposition was conducted at ambient conditions. The effects of dilution gas (argon), flow rate, frequency and waveforms on the DME decomposition were investigated. The addition of dilution gas can significantly increase the hydrogen production rate. The highest hydrogen production rate with the lowest energy consumption presents at the flow rate of 27.5 Nml min -1. AC voltage is more favored than DC voltage for the production of hydrogen with less energy input. The optimal frequency is 2.0 kHz. The hydrogen production rate is also affected by the input waveform and decreases as following: sinusoid triangular > sinusoid > ramp > square, whereas the sinusoid waveform shows the highest energy efficiency. The corona discharge decomposition of DME is leading to a simple, easy and convenient hydrogen production with no needs of catalyst and external heating.

  4. Optical emission spectroscopy of argon and hydrogen-containing plasmas

    NASA Astrophysics Data System (ADS)

    Siepa, Sarah; Danko, Stephan; Tsankov, Tsanko V.; Mussenbrock, Thomas; Czarnetzki, Uwe

    2015-09-01

    Optical emission spectroscopy (OES) on neutral argon is applied to investigate argon, hydrogen and hydrogen-silane plasmas. The spectra are analyzed using an extensive collisional-radiative model (CRM), from which the electron density and the electron temperature (or mean energy) can be calculated. The CRM also yields insight into the importance of different excited species and kinetic processes. The OES measurements are performed on pure argon plasmas at intermediate pressure. Besides, hydrogen and hydrogen-silane plasmas are investigated using argon as a trace gas. Especially for the gas mixture discharges, CRMs for low and high pressure differ substantially. The commonly used line-ratio technique is found to lose its sensitivity for gas mixture discharges at higher pressure. A solution using absolutely calibrated line intensities is proposed. The effect of radiation trapping and the shape of the electron energy distribution function on the results are discussed in detail, as they have been found to significantly influence the results. This work was supported by the Ruhr University Research School PLUS, funded by Germany's Excellence Initiative [DFG GSC 98/3].

  5. Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N{sub 2}, O{sub 2} plasmas

    SciTech Connect

    Efremov, Alexander; Kang, Sungchil; Kwon, Kwang-Ho; Seok Choi, Won

    2011-11-15

    Etch characteristics and mechanisms of SiC thin films in HBr-Ar, HBr-N{sub 2}, and HBr-O{sub 2} inductively-coupled plasmas were studied using a combination of experimental and modeling methods. The etch rates of SiC thin films were measured as functions of the additive gas fraction in the range of 0-100% for Ar, N{sub 2}, and O{sub 2} at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using Langmuir probe diagnostics and a global (zero-dimensional) plasma model. The good agreement between the behaviors of the SiC etch rate and the H atom flux could suggest that a chemical etch pathway is rather controlled by the gasification of carbon through the CH{sub x} or CH{sub x}Br{sub y} compounds.

  6. Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

    SciTech Connect

    Pobedinskas, P. Hardy, A.; Van Bael, M. K.; Haenen, K.; Degutis, G.; Dexters, W.

    2014-02-24

    Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

  7. Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits--A model prediction of damage in three dimensional structures

    NASA Astrophysics Data System (ADS)

    Eriguchi, Koji

    2014-10-01

    An increasing demand for high performance field-effect transistors (FETs) leads to the aggressive critical dimension shrinkage and the currently-emerging three dimensional (3D) geometry. Plasma processing is widely used also in the scaled- and 3D-FET (e.g. FinFET) manufacturing, where precise control of the reaction on the (sidewall) surfaces is a prime issue. In this study, damage creation mechanism during plasma etching--plasma-induced physical damage (PPD)--was investigated in such structures on the basis of the PPD range theory, atomistic simulations, and experiments. Compared to PPD in planar FETs (e.g. Si recess [2,3]), a stochastic modeling and atomistic simulations predicted that, during etching of ``fins'' in a 3D-FET, the following two mechanisms are responsible for damage creation in addition to an ion impact on the sidewall at an oblique incident angle: 1) incoming ions penetrate into the Si substrate and undergo scattering by Si atoms in the lateral direction even if the incident angle is normal to the surface and 2) some of Si atoms and ions sputtered at the surface being etched impact on the sidewall with energies sufficient to break Si-Si bonds. These straggling and sputtering processes are stochastic and fundamental, thus, result in 3D structure damage (``fin-damage''). The ``fin-damage'' induced by straggling was modeled by the PPD range theory. Molecular dynamics simulations clarified the mechanisms under the various plasma conditions. Quantum mechanical calculations showed that created defect structures play the role of a carrier trap site, which was experimentally verified by an electrical measurement. Since they are intrinsic natures of etching, both straggling and sputtering noted here should be implemented to design a low-damage etching process. This work was supported in part by Grant-in-Aid for Scientific Research (B) 23360321 from JSPS and STARC project.

  8. Effect of Hydrogen Plasma on Model Corrosion Layers of Bronze

    NASA Astrophysics Data System (ADS)

    Fojtíková, P.; Sázavská, V.; Mika, F.; Krčma, F.

    2016-05-01

    Our work is about plasmachemical reduction of model corrosion layers. The model corrosion layers were produced on bronze samples with size of 10 × 10 × 5 mm3, containing Cu and Sn. Concentrated hydrochloric acid was used as a corrosive environment. The application of reduction process in low-pressure low-temperature hydrogen plasma followed. A quartz cylindrical reactor with two outer copper electrodes was used. Plasma discharge was generated in pure hydrogen by a RF generator. Each corroded sample was treated in different conditions (supplied power and a continual or pulsed regime with a variable duty cycle mode). Process monitoring was ensured by optical emission spectroscopy. After treatment, samples were analyzed by SEM and EDX.

  9. Hydrogen plasma dynamics in the spherical theta pinch plasma target for heavy ion stripping

    SciTech Connect

    Loisch, G.; Jacoby, J.; Xu, G.; Blazevic, A.; Cihodariu-Ionita, B.

    2015-05-15

    Due to the superior ability of dense and highly ionised plasmas to ionise penetrating heavy ion beams to degrees beyond those reachable by common gas strippers, many experiments have been performed to find suitable plasma generators for this application. In the field of gas discharges, mainly z-pinch devices have been investigated so far, which are known to be limited by the nonlinear focusing effects of the plasma columns sustaining current and by electrode erosion. The spherical theta pinch has therefore been proposed as a substitution for the z-pinch, promising progress by inductive rather than capacitive coupling and displacement of the outer magnetic field by the dense, diamagnetic discharge plasma. As yet mainly experiments with argon/hydrogen mixture gas have been performed, which is not suitable for the application as a plasma stripper, this paper describes the first detailed analysis of the plasma parameters and dynamics of a hydrogen plasma created by the spherical theta pinch. These include the time integrated and time resolved electron density, the dynamics of the plasma in the discharge vessel, the comparison with the argon dominated plasma, and an outlook to reachable characteristics with similar devices.

  10. Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

    PubMed

    Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M

    2016-07-27

    Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are employed to characterize the surface chemistry, structure, and topography of the oxidation process and indicate that the oxidation mainly occurs on the topmost layer without altering the chemical composition of underlying layer. The formation of S-O bonds upon short, remote plasma exposure pins the surface Fermi level to the conduction band edge, while the MoOx formation at high temperature modulates the Fermi level toward the valence band through band alignment. A uniform coverage of monolayer amorphous MoO3 is obtained after 5 min or longer remote O2 plasma exposure at 200 °C, and the MoO3 can be completely removed by annealing at 500 °C, leaving a clean ordered MoS2 lattice structure as verified by XPS, LEED, AFM, and scanning tunneling microscopy. This work shows that a remote O2 plasma can be useful for both surface functionalization and a controlled thinning method for MoS2 device fabrication processes.

  11. Direct synthesis of hydrogen peroxide from plasma-water interactions

    NASA Astrophysics Data System (ADS)

    Liu, Jiandi; He, Bangbang; Chen, Qiang; Li, Junshuai; Xiong, Qing; Yue, Guanghui; Zhang, Xianhui; Yang, Size; Liu, Hai; Liu, Qing Huo

    2016-12-01

    Hydrogen peroxide (H2O2) is usually considered to be an important reagent in green chemistry since water is the only by-product in H2O2 involved oxidation reactions. Early studies show that direct synthesis of H2O2 by plasma-water interactions is possible, while the factors affecting the H2O2 production in this method remain unclear. Herein, we present a study on the H2O2 synthesis by atmospheric pressure plasma-water interactions. The results indicate that the most important factors for the H2O2 production are the processes taking place at the plasma-water interface, including sputtering, electric field induced hydrated ion emission, and evaporation. The H2O2 production rate reaches ~1200 μmol/h when the liquid cathode is purified water or an aqueous solution of NaCl with an initial conductivity of 10500 μS cm‑1.

  12. Direct synthesis of hydrogen peroxide from plasma-water interactions.

    PubMed

    Liu, Jiandi; He, Bangbang; Chen, Qiang; Li, Junshuai; Xiong, Qing; Yue, Guanghui; Zhang, Xianhui; Yang, Size; Liu, Hai; Liu, Qing Huo

    2016-12-05

    Hydrogen peroxide (H2O2) is usually considered to be an important reagent in green chemistry since water is the only by-product in H2O2 involved oxidation reactions. Early studies show that direct synthesis of H2O2 by plasma-water interactions is possible, while the factors affecting the H2O2 production in this method remain unclear. Herein, we present a study on the H2O2 synthesis by atmospheric pressure plasma-water interactions. The results indicate that the most important factors for the H2O2 production are the processes taking place at the plasma-water interface, including sputtering, electric field induced hydrated ion emission, and evaporation. The H2O2 production rate reaches ~1200 μmol/h when the liquid cathode is purified water or an aqueous solution of NaCl with an initial conductivity of 10500 μS cm(-1).

  13. Plasma Depolymerization of Chitosan in the Presence of Hydrogen Peroxide

    PubMed Central

    Ma, Fengming; Wang, Zhenyu; Zhao, Haitian; Tian, Shuangqi

    2012-01-01

    The depolymerization of chitosan by plasma in the presence of hydrogen peroxide (H2O2) was investigated. The efficiency of the depolymerization was demonstrated by means of determination of viscosity-average molecular weight and gel permeation chromatography (GPC). The structure of the depolymerized chitosan was characterized by Fourier-transform infrared spectra (FT-IR), ultraviolet spectra (UV) and X-ray diffraction (XRD). The results showed that chitosan can be effectively degradated by plasma in the presence of H2O2. The chemical structure of the depolymerized chitosan was not obviously modified. The combined plasma/H2O2 method is significantly efficient for scale-up manufacturing of low molecular weight chitosan. PMID:22837727

  14. Ion energy distributions in silane-hydrogen plasmas

    SciTech Connect

    Hamers, E.A.G.; Sark, W.G.J.H.M. van; Bezemer, J.; Weg, W.F. van der; Goedheer, W.J.

    1996-12-31

    For the first time ion energy distributions (IED) of different ions from silane-hydrogen (SiH{sub 4}-H{sub 2}) RF plasmas are presented, i.e., the distributions of SiH{sub 3}{sup +}, SiH{sub 2}{sup +} and Si{sub 2}H{sub 4}{sup +}. The energy distributions of SiH{sub 3}{sup +} and SiH{sub 2}{sup +} ions show peaks, which are caused by a charge exchange process in the sheath. A method is presented by which the net charge density in the sheath is determined from the plasma potential and the energy positions of the charge exchange peaks. Knowing the net charge density in the sheath and the plasma potential, the sheath thickness can be determined and an estimation of the absolute ion fluxes can be made. The flux of ions can, at maximum, account for 10% of the observed deposition rate.

  15. Enhanced magnetic ionization in hydrogen reflex discharge plasma source

    SciTech Connect

    Toader, E.I.; Covlea, V.N.

    2005-03-01

    The effect of enhanced magnetic ionization on the external and internal parameters of a high-density, low pressure reflex plasma source operating in hydrogen is studied. The Langmuir probe method and Druyvesteyn procedure coupled with suitable software are used to measure the internal parameters. The bulk plasma region is free of an electric field and presents a high degree of uniformity. The electron energy distribution function is bi-Maxwellian with a dip/shoulder structure around 5.5 eV, independent of external parameters and radial position. Due to the enhanced hollow cathode effect by the magnetic trapping of electrons, the electron density n{sub e} is as high as 10{sup 18} m{sup -3}, and the electron temperature T{sub e} is as low as a few tens of an electron volt, for dissipated energy of tens of Watts. The bulk plasma density scales with the dissipated power.

  16. Fluorocarbon assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

    SciTech Connect

    Metzler, Dominik; Oehrlein, Gottlieb S.; Bruce, Robert L.; Engelmann, Sebastian; Joseph, Eric A.

    2014-03-15

    The authors demonstrate atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. C{sub 4}F{sub 8} injection enables control of the deposited fluorocarbon (FC) layer thickness in the one to several Ångstrom range and chemical modification of the SiO{sub 2} surface. For low energy Ar{sup +} ion bombardment conditions, the physical sputter rate of SiO{sub 2} vanishes, whereas SiO{sub 2} can be etched when FC reactants are present at the surface. The authors have measured for the first time the temporal variation of the chemically enhanced etch rate of SiO{sub 2} for Ar{sup +} ion energies below 30 eV as a function of fluorocarbon surface coverage. This approach enables controlled removal of Ångstrom-thick SiO{sub 2} layers. Our results demonstrate that development of atomic layer etching processes even for complex materials is feasible.

  17. Surface interactions of SO{sub 2} and passivation chemistry during etching of Si and SiO{sub 2} in SF{sub 6}/O{sub 2} plasmas

    SciTech Connect

    Stillahn, Joshua M.; Zhang Jianming; Fisher, Ellen R.

    2011-01-15

    A variety of materials can be etched in SF{sub 6}/O{sub 2} plasmas. Here, the fate of SO{sub 2} at Si and SiO{sub 2} surfaces during etching in SF{sub 6}/O{sub 2} plasmas has been explored using the imaging of radicals interacting with surfaces method. The scattering of SO{sub 2} at Si and SiO{sub 2} surfaces was measured as a function of both the applied rf power and O{sub 2} addition to the plasma. For both surfaces, the surface scattering coefficient (S) of SO{sub 2} during etching is near unity and is largely unaffected by changing plasma parameters such as power and O{sub 2} addition. Notably the etch rate of Si increases monotonically with power, whereas the etch rate of SiO{sub 2} appears insensitive to changes in plasma conditions. As a result, the etch selectivity closely follows the trends of the Si etch rate. Etch rates are compared to other fluorine-containing plasma systems such as NF{sub 3}/O{sub 2} and C{sub 2}F{sub 6}/O{sub 2}. Using mass spectral data and optical emission spectra to characterize the gas phase species combined with compositional analysis from x-ray photoelectron spectroscopy data, the formation and roles of SO{sub 2} in Si and SiO{sub 2} etching are discussed and correlated with etch rate and other gas phase species such as F, O, and S{sub x}O{sub y}F{sub z}.

  18. Production and loss mechanisms of SiCl{sub X} etch products during silicon etching in a high density HBr/Cl{sub 2}/O{sub 2} plasma

    SciTech Connect

    Cunge, G.; Kogelschatz, M.; Sadeghi, N.

    2004-10-15

    SiCl{sub X} (X=0-2) radicals' concentrations have been measured by broadband ultraviolet absorption spectroscopy during the etching of 200 mm diameter silicon wafers in HBr/Cl{sub 2}/O{sub 2} plasmas. We report the variations of the concentrations of these radicals as a function of the radio frequency (rf) source power and rf-bias power. The silicon wafer etch rate is measured simultaneously. From the measured radicals densities and using electron impact ionization cross sections found in the literature, the densities of SiCl{sub X}{sup +} ions are calculated and are found to be in good agreement with ion densities measured by mass spectrometry. The upper limit for the SiCl{sub 2} radical concentration is calculated from the wafer etch rate. By comparison with the measured SiCl{sub 2} radical concentration it is concluded that SiCl{sub 2} radicals should also be produced by the reactor walls due to the etching of silicon containing species adsorbed on the reactor walls. Finally, using electron impact dissociation cross sections, the densities of SiCl and Si are calculated from the measured densities of SiCl{sub 2} and SiCl, respectively. The comparison between the calculated and measured values of SiCl{sub X} densities allowed us to conclude that SiCl (and Si) are produced both in the gas phase by electron impact dissociation of SiCl{sub 2} (SiCl) radicals and at the reactor wall surfaces by the neutralization and reflection of {approx_equal}50% of the flux of SiCl{sup +} (Si{sup +}) ions impinging on these surfaces. At the same time SiCl and Si are estimated to be lost (adsorption and abstraction reactions) on the reactor walls with a probability ranging between 0.2 and 1.

  19. Novel Composite Hydrogen-Permeable Membranes for Nonthermal Plasma Reactors for the Decomposition of Hydrogen Sulfide

    SciTech Connect

    Morris Argyle; John Ackerman; Suresh Muknahallipatna; Jerry Hamann; Stanislaw Legowski; Gui-Bing Zhao; Sanil John; Ji-Jun Zhang; Linna Wang

    2007-09-30

    The goal of this experimental project was to design and fabricate a reactor and membrane test cell to dissociate hydrogen sulfide (H{sub 2}S) in a nonthermal plasma and to recover hydrogen (H{sub 2}) through a superpermeable multi-layer membrane. Superpermeability of hydrogen atoms (H) has been reported by some researchers using membranes made of Group V transition metals (niobium, tantalum, vanadium, and their alloys), but it was not achieved at the moderate pressure conditions used in this study. However, H{sub 2}S was successfully decomposed at energy efficiencies higher than any other reports for the high H{sub 2}S concentration and moderate pressures (corresponding to high reactor throughputs) used in this study.

  20. Finishing of AT-cut quartz crystal wafer with nanometric thickness uniformity by pulse-modulated atmospheric pressure plasma etching.

    PubMed

    Yamamura, Kazuya; Ueda, Masaki; Shibahara, Masafumi; Zettsu, Nobuyuki

    2011-04-01

    Quartz resonator is a very important device to generate a clock frequency for information and telecommunication system. Improvement of the productivity of the quartz resonator is always required because a huge amount of the resonator is demanded for installing to various electronic devices. Resonance frequency of the quartz resonator is decided by the thickness of the quartz crystal wafer. Therefore, it is necessary to uniform the thickness distribution of the wafer with nanometric level. We have proposed the improvement technique of the thickness distribution of the quartz crystal wafer by numerically controlled correction using atmospheric pressure plasma which is non-contact and chemical removal technique. Heating effects of the quartz wafer in the removal rate and the correction accuracy were investigated. The heating of the substrate and compensate of the scanning speed of the worktable according to the variation of the surface temperature enabled an increase of 50% in the etching rate and 10-nanometric-level accuracy in the correction of the thickness distribution of the quartz wafer, respectively.

  1. Studies on plasma profiles and its effect on dust charging in hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Kakati, B.; Kausik, S. S.; Saikia, B. K.; Bandyopadhay, M.

    2010-02-01

    Plasma profiles and its influence on dust charging are studied in hydrogen plasma. The plasma is produced in a high vacuum device by a hot cathode discharge method and is confined by a cusped magnetic field cage. A cylindrical Espion advanced Langmuir probe having 0.15 mm diameter and 10.0 mm length is used to study the plasma parameters for various discharge conditions. Optimum operational discharge parameters in terms of charging of the dust grains are studied. The charge on the surface of the dust particle is calculated from the capacitance model and the current by the dust grains is measured by the combination of a Faraday cup and an electrometer. Unlike our previous experiments in which dust grains were produced in-situ, here a dust dropper is used to drop the dust particles into the plasma.

  2. Negative hydrogen ion production in a helicon plasma source

    SciTech Connect

    Santoso, J. Corr, C. S.; Manoharan, R.; O'Byrne, S.

    2015-09-15

    In order to develop very high energy (>1 MeV) neutral beam injection systems for applications, such as plasma heating in fusion devices, it is necessary first to develop high throughput negative ion sources. For the ITER reference source, this will be realised using caesiated inductively coupled plasma devices, containing either hydrogen or deuterium discharges, operated with high rf input powers (up to 90 kW per driver). It has been suggested that due to their high power coupling efficiency, helicon devices may be able to reduce power requirements and potentially obviate the need for caesiation due to the high plasma densities achievable. Here, we present measurements of negative ion densities in a hydrogen discharge produced by a helicon device, with externally applied DC magnetic fields ranging from 0 to 8.5 mT at 5 and 10 mTorr fill pressures. These measurements were taken in the magnetised plasma interaction experiment at the Australian National University and were performed using the probe-based laser photodetachment technique, modified for the use in the afterglow of the plasma discharge. A peak in the electron density is observed at ∼3 mT and is correlated with changes in the rf power transfer efficiency. With increasing magnetic field, an increase in the negative ion fraction from 0.04 to 0.10 and negative ion densities from 8 × 10{sup 14 }m{sup −3} to 7 × 10{sup 15 }m{sup −3} is observed. It is also shown that the negative ion densities can be increased by a factor of 8 with the application of an external DC magnetic field.

  3. Negative hydrogen ion production in a helicon plasma source

    NASA Astrophysics Data System (ADS)

    Santoso, J.; Manoharan, R.; O'Byrne, S.; Corr, C. S.

    2015-09-01

    In order to develop very high energy (>1 MeV) neutral beam injection systems for applications, such as plasma heating in fusion devices, it is necessary first to develop high throughput negative ion sources. For the ITER reference source, this will be realised using caesiated inductively coupled plasma devices, containing either hydrogen or deuterium discharges, operated with high rf input powers (up to 90 kW per driver). It has been suggested that due to their high power coupling efficiency, helicon devices may be able to reduce power requirements and potentially obviate the need for caesiation due to the high plasma densities achievable. Here, we present measurements of negative ion densities in a hydrogen discharge produced by a helicon device, with externally applied DC magnetic fields ranging from 0 to 8.5 mT at 5 and 10 mTorr fill pressures. These measurements were taken in the magnetised plasma interaction experiment at the Australian National University and were performed using the probe-based laser photodetachment technique, modified for the use in the afterglow of the plasma discharge. A peak in the electron density is observed at ˜3 mT and is correlated with changes in the rf power transfer efficiency. With increasing magnetic field, an increase in the negative ion fraction from 0.04 to 0.10 and negative ion densities from 8 × 1014 m-3 to 7 × 1015 m-3 is observed. It is also shown that the negative ion densities can be increased by a factor of 8 with the application of an external DC magnetic field.

  4. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  5. Etching of porous and solid SiO2 in Ar /c-C4F8, O2/c-C4F8 and Ar /O2/c-C4F8 plasmas

    NASA Astrophysics Data System (ADS)

    Sankaran, Arvind; Kushner, Mark J.

    2005-01-01

    C-C4F8-based plasmas are used for selective etching of high aspect ratio (HAR) trenches in SiO2 and other dielectrics for microelectronics fabrication. Additives such as Ar and O2 are often used to optimize the process. Understanding the fundamentals of these processes is critical to extending technologies developed for solid SiO2 to porous SiO2, as used in low-dielectric constant insulators. To investigate these issues, reaction mechanisms developed for etching of solid and porous SiO2 in fluorocarbon plasmas and for etching of organic polymers in O2 plasmas have been incorporated into a feature profile model capable of addressing two-phase porous materials. The reaction mechanism was validated by comparison to experiments for blanket etching of solid and porous SiO2 in Ar /c-C4F8 and O2/c-C4F8 plasmas using inductively coupled plasma reactors. We found that the blanket etch rates of both solid and porous SiO2 had maxima as a function of Ar and O2 addition to c-C4F8 at mole fractions corresponding to an optimum thickness of the overlying polymer layer. Larger Ar and O2 additions were required to optimize the etch rate for porous SiO2. Whereas etch stops occurred during etching of HAR features in solid and porous SiO2 using pure c-C4F8 plasmas, Ar and O2 addition facilitated etching by reducing the polymer thickness, though with some loss of critical dimensions. Mixtures of Ar /O2/c-C4F8 can be used to manage this tradeoff.

  6. Numerical Study on the Acetylene Concentration in the Hydrogen-Carbon System in a Hydrogen Plasma Torch

    NASA Astrophysics Data System (ADS)

    Chen, Longwei; Shen, Jie; Shu, Xingsheng; Fang, Shidong; Zhang, Lipeng; Meng, Yuedong

    2009-06-01

    Effects of the hydrogen/carbon mole ratio and pyrolysis gas pressure on the acetylene concentration in the hydrogen-carbon system in a plasma torch were numerically calculated by using the chemical thermodynamic equilibrium method of Gibbs free energy. The calculated results indicate that the hydrogen concentration and the pyrolysis gas pressure play crucial roles in acetylene formation. Appropriately abundant hydrogen, with a mole ratio of hydrogen to carbon about 1 or 2, and a relatively high pyrolysis gas pressure can enhance the acetylene concentration. In the experiment, a compromised project consisting of an appropriate hydrogen flow rate and a feasible high pyrolysis gas pressure needs to be carried out to increase the acetylene concentration from coal pyrolysis in the hydrogen plasma torch.

  7. Characterization of the conduction phase of a plasma opening switch using a hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Moschella, J. J.; Klepper, C. C.; Vidoli, C.; Yadlowsky, E. J.; Weber, B. V.; Commisso, R. J.; Black, D. C.; Moosman, B.; Stephanakis, S. J.; Hinshelwood, D. D.; Maron, Y.

    2005-02-01

    Plasma opening switch (POS) experiments were conducted on the Hawk generator using an inverse pinch plasma source to inject a hydrogen plasma. Using a combination of interferometry, current measurements, and spectroscopic observations, it is shown that the conduction phase is characterized by the propagation of a current channel through the switch region that pushes a significant fraction of the plasma mass downstream, past the load edge of the switch. The data indicate that the current channel arrives at the load edge of the switch ≈550ns into the 950-ns-long conduction phase, in agreement with calculations based on J ×B displacement. Previously published POS experiments, using multispecies plasmas, observed that a relatively small fraction of the injected plasma mass propagated downstream and that the conduction phase ended soon after the current channel reached the load edge of the switch. It is suggested that the observed differences between these two types of switches involves the separation of ionic species subject to a magnetic force, where the light-ion plasma is pushed ahead of the magnetic field front and the heavier-ion plasma is penetrated by the field. Species-separation effects may be important in a multispecies POS but would be negligible in this almost pure (>95%) proton-plasma experiment. While the important role of the plasma composition in pulsed magnetic field plasma interactions has been pointed out in previous experimental studies, this work demonstrates that the plasma composition can have a significant effect on the conduction time of a POS.

  8. Negative hydrogen ions in a linear helicon plasma device

    NASA Astrophysics Data System (ADS)

    Corr, Cormac; Santoso, Jesse; Samuell, Cameron; Willett, Hannah; Manoharan, Rounak; O'Byrne, Sean

    2015-09-01

    Low-pressure negative ion sources are of crucial importance to the development of high-energy (>1 MeV) neutral beam injection systems for the ITER experimental tokamak device. Due to their high power coupling efficiency and high plasma densities, helicon devices may be able to reduce power requirements and potentially remove the need for caesium. In helicon sources, the RF power can be coupled efficiently into the plasma and it has been previously observed that the application of a small magnetic field can lead to a significant increase in the plasma density. In this work, we investigate negative ion dynamics in a high-power (20 kW) helicon plasma source. The negative ion fraction is measured by probe-based laser photodetachment, electron density and temperature are determined by a Langmuir probe and tuneable diode laser absorption spectroscopy is used to determine the density of the H(n = 2) excited atomic state and the gas temperature. The negative ion density and excited atomic hydrogen density display a maximum at a low applied magnetic field of 3 mT, while the electron temperature displays a minimum. The negative ion density can be increased by a factor of 8 with the application of the magnetic field. Spatial and temporal measurements will also be presented. The Australian Research Grants Council is acknowledged for funding.

  9. Electrical properties of Hg1-xCdxTe by different etching techniques

    NASA Astrophysics Data System (ADS)

    Chen, X. T.; Qiao, H.; Liu, X. Y.; Yang, K. J.

    2015-11-01

    Effects on the electrical properties of HgCdTe photoconductive devices etched by inductively coupled plasma (ICP) based on CH4-Ar mixture, ion beam milling (IBM) and bromine-hydrogen bromide solution (Br2/HBr) have been investigated. Magnetic-field-dependent Hall measurement and optoelectronic performance measurement at liquid nitrogen temperature were performed. Mobility spectrum analysis (MSA) and multicarrier fitting (MCF) were applied to evaluate the carrier characteristics. Sample etched by ICP indicated a higher mobility and the carrier scattering mechanism was dominated by polar optical phonon (POP) which could lead to superior detector performance accordingly. Meanwhile, sample etched by IBM was found to have large amount of electron concentration and sample etched by Br2/HBr showed a very low mobility. The dominant mechanism of Br2/HBr etched sample was ionized impurity scattering for the carriers which meant inferior resultant detector performance.

  10. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

    SciTech Connect

    Tasaka, Akimasa; Kotaka, Yuki; Oda, Atsushi; Saito, Morihiro; Tojo, Tetsuro; Inaba, Minoru

    2014-09-01

    In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the number of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.

  11. Simulation of the Partially Ionized Negative Hydrogen Plasma

    NASA Astrophysics Data System (ADS)

    Averkin, Sergey; Gatsonis, Nikolaos; Olson, Lynn

    2012-10-01

    A High Pressure Discharge Negative Ion Source (HPDNIS) operating on hydrogen is been under investigation. The Negative Ion Production (NIP) section of the HPDNIS attaches to the 10-100 Torr RF-discharge chamber with a micronozzle and ends with a grid that extracts the negative ion beam. The partially ionized and reacting plasma flow in the NIP section is simulated using an unstructured three-dimensional Direct Simulation Monte Carlo (U3DSMC) code. The NIP section contains a low-pressure plasma that includes H2, vibrationally-rotationally excited H2^*, negative hydrogen atoms H^-, and electrons. Primary reactions in the NIP section are dissociate attachment, H2^*+e->H^0+H^-and electron collisional detachment, e+H^-->H+2e. The U3DSMC computational domain includes the entrance to the NIP nozzle and the extraction grid at the exit. The flow parameters at the entrance are based on conditions in the RF-discharge chamber and are implemented in U3DSMC using a Kinetic-Moment subsonic boundary conditions method. Neutral--neutral, ion-neutral, Coulomb collisions and charge-neutralizing collisions are implemented in U3DSMC using the no time counter method, electron-molecule collisions are treated by the constant timestep method. Simulations cover the regime of operation of the HPDNIS and examine the flow characteristics inside the NIP section.

  12. Microcontamination control in a Lam 4400 plasma etcher: 15X reduction in particle defect densities during SF6/He silicon trench etch

    NASA Astrophysics Data System (ADS)

    Bhagvat, Shantanu; Cusack, Christine; Anderson, Larry

    1997-08-01

    Particles from the Lam 4400 blocked the etching of nitride and silicon during the trench etch for semi-recessed LOCOS field oxidation. This trench etch resulted in poor mean time between cleans (MTBC) of less than 500 wafers, reduced availability of the system, wafer scrappage up to 2.5%, and masked KLA defect source analysis at subsequent steps. EDX analysis of the particles showed them to be AlFx, the source of which we determined to be the Al chamber parts reacting with the F plasma. This unique paper shows the benefits of various improvements to plasma cleans, chamber cleans, and equipment hardware upgrades (such as DI water sealed, anodized chamber parts). We compare the performance of the tool before and after the improvements, resulting in a 10 fold increase in MTBC, 20% increase in system availability, 15X reduction in particle defect densities, and resultant zero wafer scrappage due to blocked trench etc. Detailed system performance data (MTBC, availability, particle data), KLA defect trend charts, and SEM/EDX data is presented.

  13. Hydrogen production by plasma electrolysis reactor of KOH-ethanol solution

    NASA Astrophysics Data System (ADS)

    Saksono, N.; Batubara, T.; Bismo, S.

    2016-11-01

    Plasma electrolysis has great potential in industrial hydrogen production, chlor-alkali production, and waste water treatment. Plasma electrolysis produces more hydrogen with less energy consumption than hydrocarbon or Faraday electrolysis. This paper investigated the hydrogen production by plasma electrolysis of KOH-ethanol solution at 80 °C and 1 atm. The effects of voltage, KOH solution, ethanol addition, and cathode deep on plasma electrolysis performance were studied. The hydrogen production was analyzed using bubble flow meter and hydrogen analyzer. The electrical energy consumption was measured by a digital multimeter. The effectiveness of plasma electrolysis in terms of hydrogen production was evaluated by comparing it with Faraday Electrolysis. The results showed that hydrogen produced by plasma electrolysis is 149 times higher than the hydrogen produced by Faraday electrolysis. The optimum hydrogen production was 50.71 mmol/min, obtained at 700 V with 0.03 M KOH, 10% vol ethanol and 6.6 cm cathode deep, with energy consumption 1.49 kJ/mmol. The result demonstrates a promising path for hydrogen production by utilizing plasma electrolysis reactor.

  14. Patterning of Transparent Conducting Oxide Thin Films by Wet Etching for a-Si:H TFT-LCDs

    SciTech Connect

    Lan, J. H.; Kanicki, J.; Catalano, A.; Keane, J.; Den Boer, W.; Gu, T.

    1996-12-01

    The patterning characteristics of the indium tin oxide (ITO) thin films having different microstructures were investigated. Several etching solutions (HCl, HBr, and their mixtures with HNO3) were used in this study. We have found that ITO films containing a larger volume fraction of the amorphous phase show higher etch rates than those containing a larger volume fraction of the crystalline phase. Also, the crystalline ITO fims have shown a very good uniformity in patterning, and following the etching no ITO residue (unetched ITO) formation has been observed. In contrast, ITO residues were found after the etching of the films containing both amorphous and crystalline phases. We have also developed a process for the fabrication of the ITO with a tapered edge profile. The taper angle can be controlled by varying the ratio of HNO3 to the HCl in the etching solutions. Finally, ITO films have been found to be chemically unstable in a hydrogen containing plasma environment. On the contrary, aluminum doped zinc oxide (AZO) films, having an optical transmittance and electrical resisitivity comparable to ITO films, are very stable in the same hydrogen containing plasma environment. In addition, a high etch rate, no etching residue formation, and a uniform etching have been found for the AZO films, which make them suitable for a-Si:H TFT-LCD applications.

  15. High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111)

    NASA Astrophysics Data System (ADS)

    Mondelli, Pierluigi; Gupta, Bharati; Grazia Betti, Maria; Mariani, Carlo; Lipton Duffin, Josh; Motta, Nunzio

    2017-03-01

    Etching with atomic hydrogen, as a preparation step before the high-temperature growth process of graphene onto a thin 3C-SiC film grown on Si(111), greatly improves the structural quality of topmost graphene layers. Pit formation and island coalescence, which are typical of graphene growth by SiC graphitization, are quenched and accompanied by widening of the graphene domain sizes to hundreds of nanometers, and by a significant reduction in surface roughness down to a single substrate bilayer. The surface reconstructions expected for graphene and the underlying layer are shown with atomic resolution by scanning tunnelling microscopy. Spectroscopic features typical of graphene are measured by core-level photoemission and Raman spectroscopy.

  16. High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111).

    PubMed

    Mondelli, Pierluigi; Gupta, Bharati; Betti, Maria Grazia; Mariani, Carlo; Duffin, Josh Lipton; Motta, Nunzio

    2017-03-17

    Etching with atomic hydrogen, as a preparation step before the high-temperature growth process of graphene onto a thin 3C-SiC film grown on Si(111), greatly improves the structural quality of topmost graphene layers. Pit formation and island coalescence, which are typical of graphene growth by SiC graphitization, are quenched and accompanied by widening of the graphene domain sizes to hundreds of nanometers, and by a significant reduction in surface roughness down to a single substrate bilayer. The surface reconstructions expected for graphene and the underlying layer are shown with atomic resolution by scanning tunnelling microscopy. Spectroscopic features typical of graphene are measured by core-level photoemission and Raman spectroscopy.

  17. Etching of high aspect ratio features in Si using SF{sub 6}/O{sub 2}/HBr and SF{sub 6}/O{sub 2}/Cl{sub 2} plasma

    SciTech Connect

    Gomez, Sergi; Belen, Rodolfo Jun; Kiehlbauch, Mark; Aydil, Eray S.

    2005-11-15

    We have investigated the etching of high aspect ratio holes ({approx}4 {mu}m deep, {approx}0.2 {mu}m diameter) in silicon using plasmas maintained in mixtures of SF{sub 6}, O{sub 2}, and HBr or Cl{sub 2} gases. The etching experiments were conducted in a low pressure (25 mTorr), high density, inductively coupled plasma etching reactor with a planar coil. Visualization of the profiles with scanning electron microscopy is used in conjunction with plasma diagnostics such as optical emission and mass spectroscopies to understand the key factors that control the feature profile shape and etch rate. HBr addition to SF{sub 6}/O{sub 2} mixture reduces the F-to-O ratio, increases sidewall passivation and reduces mask undercut. Addition of Cl{sub 2} to SF{sub 6}/O{sub 2} discharge also decreases the F-to-O ratio, but Cl-enhanced F chemical etching of silicon significantly increases the mask undercut and lateral etching. In both SF{sub 6}/O{sub 2}/HBr and SF{sub 6}/O{sub 2}/Cl{sub 2} mixtures, reduction of O{sub 2} flow rate and subsequent increase of the halogen-to-O ratio eventually results in significant lateral etching because of the lack of oxygen required to form a siliconoxyhalide passivating film on the sidewalls.

  18. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  19. Surface pH and bond strength of a self-etching primer/adhesive system to intracoronal dentin after application of hydrogen peroxide bleach with sodium perborate.

    PubMed

    Elkhatib, Hanadi; Nakajima, Masatoshi; Hiraishi, Noriko; Kitasako, Yuichi; Tagami, Junji; Nomura, Satoshi

    2003-01-01

    This study compared the dentin bond strength of a self-etching primer/adhesive system with dentin surface pH with or without bleaching and observed the morphological changes in bleached dentin treated with a self-etching primer. Dentin disks were prepared from the coronal-labial region of 32 human anterior teeth. The pulpal surfaces of the dentin disks were polished with 600-grit SiC paper under running water. The dentin surfaces on all specimens were bleached with a mixture of 30% hydrogen peroxide and sodium perborate in 100% humidity at 37 degrees C for one week. The bleaching agent was then rinsed off with water for 5, 15 or 30 seconds. All specimens were stored in water at 37 degrees C. Half of the five-second rinsing specimens were stored in water for an additional week. Dentin surface pH with or without bleaching was examined using a pH-imaging microscope (SCHEM-100). A self-etching primer/adhesive system (Clearfil SE Bond) was applied to bleached or unbleached dentin according to the manufacturer's instructions. After 24-hour water storage, the bonded specimens were prepared for microtensile testing. Microtensile bond strength (microTBS) to dentin was measured using a universal-testing machine (EZ test, Shimadzu, Japan) at a crosshead speed of 1.0 mm/minute. Data were analyzed by one-way ANOVA and Scheffe's test (alpha=0.05). The pH values of the dentin surfaces of the 5 and 15 second rinsing groups were significantly higher than the control group (p<0.05), while the 30-second rinsing and one-week water storage groups had similar surface pH values to the control group (p<0.05). The microTBS of 5, 15 and 30 second rinsing specimens after bleaching were significantly lower than the control specimens (p<0.05). However, after one-week of water storage, the microTBS returned to the control group. The application of a bleaching agent increased the pH value of the dentin surface and decreased the bond strength of the self-etching primer/adhesive system. One

  20. Direct synthesis of hydrogen peroxide from plasma-water interactions

    PubMed Central

    Liu, Jiandi; He, Bangbang; Chen, Qiang; Li, Junshuai; Xiong, Qing; Yue, Guanghui; Zhang, Xianhui; Yang, Size; Liu, Hai; Liu, Qing Huo

    2016-01-01

    Hydrogen peroxide (H2O2) is usually considered to be an important reagent in green chemistry since water is the only by-product in H2O2 involved oxidation reactions. Early studies show that direct synthesis of H2O2 by plasma-water interactions is possible, while the factors affecting the H2O2 production in this method remain unclear. Herein, we present a study on the H2O2 synthesis by atmospheric pressure plasma-water interactions. The results indicate that the most important factors for the H2O2 production are the processes taking place at the plasma-water interface, including sputtering, electric field induced hydrated ion emission, and evaporation. The H2O2 production rate reaches ~1200 μmol/h when the liquid cathode is purified water or an aqueous solution of NaCl with an initial conductivity of 10500 μS cm−1. PMID:27917925

  1. Effect of Non-Thermal Argon Plasma on Bond Strength of a Self-Etch Adhesive System to NaOCl-Treated Dentin.

    PubMed

    Abreu, João Luiz Bittencourt de; Prado, Maíra; Simão, Renata Antoun; Silva, Eduardo Moreira da; Dias, Katia Regina Hostilio Cervantes

    2016-01-01

    Studies have been showing a decrease of bond strength in dentin treated with sodium hypochlorite (NaOCl). The aim of this study was to evaluate the effect of non-thermal argon plasma on the bond strength of a self-etch adhesive system to dentin exposed to NaOCl. Thirty-two flat dentin surfaces of bovine incisors were immersed in 2.5% NaOCl for 30 min to simulate the irrigation step during endodontic treatment. The specimens were divided into four groups (n=8), according to the surface treatment: Control (without plasma treatment), AR15 (argon plasma for 15 s), AR30 (argon plasma for 30 s) and AR45 (argon plasma for 45 s). For microtensile bond strength test, 5 specimens were used per group. In each group, the specimens were hybridized with a self-etch adhesive system (Clearfil SE Bond) and resin composite buildups were constructed. After 48 h of water storage, specimens were sectioned into sticks (5 per tooth, 25 per group) and subjected to microtensile bond strength test (μTBS) until failure, evaluating failure mode. Three specimens per group were analyzed under FTIR spectroscopy to verify the chemical modifications produced in dentin. μTBS data were analyzed using ANOVA and Tamhane tests (p<0.05). AR30 showed the highest μTBS (20.86±9.0). AR15 (13.81±6.4) and AR45 (11.51±6.8) were statistically similar to control (13.67±8.1). FTIR spectroscopy showed that argon plasma treatment produced chemical modifications in dentin. In conclusion, non-thermal argon plasma treatment for 30 s produced chemical changes in dentin and improved the μTBs of Clearfil SE Bond to NaOCl-treated dentin.

  2. Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

    NASA Astrophysics Data System (ADS)

    Shivkumar, G.; Tholeti, S. S.; Alrefae, M. A.; Fisher, T. S.; Alexeenko, A. A.

    2016-03-01

    The aim of this work is to build a numerical model of hydrogen plasma inside a microwave plasma chemical vapor deposition system. This model will help in understanding and optimizing the conditions for the growth of carbon nanostructures. A 2D axisymmetric model of the system is implemented using the finite element high frequency Maxwell solver and the heat transfer solver in COMSOL Multiphysics. The system is modeled to study variation in parameters with reactor geometry, microwave power, and gas pressure. The results are compared with experimental measurements from the Q-branch of the H2 Fulcher band of hydrogen using an optical emission spectroscopy technique. The parameter γ in Füner's model is calibrated to match experimental observations at a power of 500 W and 30 Torr. Good agreement is found between the modeling and experimental results for a wide range of powers and pressures. The gas temperature exhibits a weak dependence on power and a strong dependence on gas pressure. The inclusion of a vertical dielectric pillar that concentrates the plasma increases the maximum electron temperature by 70%, the maximum gas temperature by 50%, and the maximum electron number density by 70% when compared to conditions without the pillar at 500 W and 30 Torr. Experimental observations also indicate intensified plasma with the inclusion of a pillar.

  3. Plasma-screening effects on the electron-impact excitation of hydrogenic ions in dense plasmas

    NASA Technical Reports Server (NTRS)

    Jung, Young-Dae

    1993-01-01

    Plasma-screening effects are investigated on electron-impact excitation of hydrogenic ions in dense plasmas. Scaled cross sections Z(exp 4) sigma for 1s yields 2s and 1s yields 2p are obtained for a Debye-Hueckel model of the screened Coulomb interaction. Ground and excited bound wave functions are modified in the screened Coulomb potential (Debye-Hueckel model) using the Ritz variation method. The resulting atomic wave functions and their eigenenergies agree well with the numerical and high-order perturbation theory calculations for the interesting domain of the Debye length not less than 10. The Born approximation is used to describe the continuum states of the projectile electron. Plasma screening effects on the atomic electrons cannot be neglected in the high-density cases. Including these effects, the cross sections are appreciably increased for 1s yields 2s transitions and decreased for 1s yields 2p transitions.

  4. Numerical study of influence of hydrogen backflow on krypton Hall effect thruster plasma focusing

    NASA Astrophysics Data System (ADS)

    Yan, Shilin; Ding, Yongjie; Wei, Liqiu; Hu, Yanlin; Li, Jie; Ning, Zhongxi; Yu, Daren

    2017-03-01

    The influence of backflow hydrogen on plasma plume focusing of a krypton Hall effect thruster is studied via a numerical simulation method. Theoretical analysis indicates that hydrogen participates in the plasma discharge process, changes the potential and ionization distribution in the thruster discharge cavity, and finally affects the plume focusing within a vacuum vessel.

  5. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  6. Modeling the Spectra of Dense Hydrogen Plasmas: Beyond Occupation Probability

    NASA Astrophysics Data System (ADS)

    Gomez, T. A.; Montgomery, M. H.; Nagayama, T.; Kilcrease, D. P.; Winget, D. E.

    2017-03-01

    Accurately measuring the masses of white dwarf stars is crucial in many astrophysical contexts (e.g., asteroseismology and cosmochronology). These masses are most commonly determined by fitting a model atmosphere to an observed spectrum; this is known as the spectroscopic method. However, for cases in which more than one method may be employed, there are well known discrepancies between masses determined by the spectroscopic method and those determined by astrometric, dynamical, and/or gravitational-redshift methods. In an effort to resolve these discrepancies, we are developing a new model of hydrogen in a dense plasma that is a significant departure from previous models. Experiments at Sandia National Laboratories are currently underway to validate these new models, and we have begun modifications to incorporate these models into stellar-atmosphere codes.

  7. Angular dependence of Si{sub 3}N{sub 4} etch rates and the etch selectivity of SiO{sub 2} to Si{sub 3}N{sub 4} at different bias voltages in a high-density C{sub 4}F{sub 8} plasma

    SciTech Connect

    Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

    2007-09-15

    The dependence of Si{sub 3}N{sub 4} etch rates and the etch selectivity of SiO{sub 2} to Si{sub 3}N{sub 4} on ion-incident angles was studied for different bias voltages in a high-density C{sub 4}F{sub 8} plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si{sub 3}N{sub 4} etching, but it increased with the bias voltage in SiO{sub 2} etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si{sub 3}N{sub 4} etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO{sub 2} than for Si{sub 3}N{sub 4} and, consequently, the etch selectivity of SiO{sub 2} to Si{sub 3}N{sub 4} decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO{sub 2} had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF{sub x}) film formed on the substrates.

  8. Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C4F8 and Ar/CHF3 Plasma

    SciTech Connect

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L; Joseph, Eric A; Oehrlein, Gottlieb S

    2016-09-08

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32, 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry

  9. Impact of hydrogen isotope species on microinstabilities in helical plasmas

    NASA Astrophysics Data System (ADS)

    Nakata, Motoki; Nunami, Masanori; Sugama, Hideo; Watanabe, Tomo-Hiko

    2016-07-01

    The impact of isotope ion mass on ion-scale and electron-scale microinstabilities such as ion temperature gradient (ITG) mode, trapped electron mode (TEM), and electron temperature gradient (ETG) mode in helical plasmas are investigated by using gyrokinetic Vlasov simulations with a hydrogen isotope and real-mass kinetic electrons. Comprehensive scans for the equilibrium parameters and magnetic configurations clarify the transition from ITG mode to TEM instability, where a significant TEM enhancement is revealed in the case of inward-shifted plasma compared to that in the standard configuration. It is elucidated that the ion-mass dependence on the ratio of the electron-ion collision frequency to the ion transit one, i.e. {ν\\text{ei}}/{ω\\text{ti}}\\propto {{≤ft({{m}\\text{i}}/{{m}\\text{e}}\\right)}1/2} , leads to a stabilization of the TEM for heavier isotope ions. The ITG growth rate indicates a gyro-Bohm-like ion-mass dependence, where the mixing-length estimate of diffusivity yields γ /k\\bot2\\propto m\\text{i}1/2 . On the other hand, a weak isotope dependence of the ETG growth rate is identified. A collisionality scan also reveals that the TEM stabilization by the isotope ions becomes more significant for relatively higher collisionality in a banana regime.

  10. Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

    NASA Technical Reports Server (NTRS)

    Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

    2016-01-01

    The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

  11. Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride.

    PubMed

    DuMont, Jaime W; George, Steven M

    2017-02-07

    The thermal atomic layer etching (ALE) of Al2O3 can be performed using sequential and self-limiting reactions with trimethylaluminum (TMA) and hydrogen fluoride (HF) as the reactants. The atomic layer deposition (ALD) of AlF3 can also be accomplished using the same reactants. This paper examined the competition between Al2O3 ALE and AlF3 ALD using in situ Fourier transform infrared (FTIR) vibrational spectroscopy measurements on Al2O3 ALD-coated SiO2 nanoparticles. The FTIR spectra could observe an absorbance loss of the Al-O stretching vibrations during Al2O3 ALE or an absorbance gain of the Al-F stretching vibrations during AlF3 ALD. The transition from AlF3 ALD to Al2O3 ALE occurred versus reaction temperature and was also influenced by the N2 or He background gas pressure. Higher temperatures and lower background gas pressures led to Al2O3 ALE. Lower temperatures and higher background gas pressures led to AlF3 ALD. The FTIR measurements also monitored AlCH3* and HF(*) species on the surface after the TMA and HF reactant exposures. The loss of AlCH3* and HF(*) species at higher temperatures is believed to play a vital role in the transition between AlF3 ALD at lower temperatures and Al2O3 ALE at higher temperatures. The change between AlF3 ALD and Al2O3 ALE was defined by the transition temperature. Higher transition temperatures were observed using larger N2 or He background gas pressures. This correlation was associated with variations in the N2 or He gas thermal conductivity versus pressure. The fluorination reaction during Al2O3 ALE is very exothermic and leads to temperature rises in the SiO2 nanoparticles. These temperature transients influence the Al2O3 etching. The higher N2 and He gas thermal conductivities are able to cool the SiO2 nanoparticles more efficiently and minimize the size of the temperature rises. The competition between Al2O3 ALE and AlF3 ALD using TMA and HF illustrates the interplay between etching and growth and the importance of

  12. Operating characteristics of a hydrogen-argon plasma torch for supersonic combustion applications

    SciTech Connect

    Barbi, E.; Mahan, J.R.; O'brien, W.F.; Wagner, T.C.

    1989-04-01

    The residence time of the combustible mixture in the combustion chamber of a scramjet engine is much less than the time normally required for complete combustion. Hydrogen and hydrocarbon fuels require an ignition source under conditions typically found in a scramjet combustor. Analytical studies indicate that the presence of hydrogen atoms should greatly reduce the ignition delay in this environment. Because hydrogen plasmas are prolific sources of hydrogen atoms, a low-power, uncooled hydrogen plasma torch has been built and tested to evaluate its potential as a possible flame holder for supersonic combustion. The torch was found to be unstable when operated on pure hydrogen; however, stable operation could be obtained by using argon as a body gas and mixing in the desired amount of hydrogen. The stability limits of the torch are delineated and its electrical and thermal behavior documented. An average torch thermal efficiency of around 88 percent is demonstrated. 10 references.

  13. Operating characteristics of a hydrogen-argon plasma torch for supersonic combustion applications

    NASA Technical Reports Server (NTRS)

    Barbi, E.; Mahan, J. R.; O'Brien, W. F.; Wagner, T. C.

    1989-01-01

    The residence time of the combustible mixture in the combustion chamber of a scramjet engine is much less than the time normally required for complete combustion. Hydrogen and hydrocarbon fuels require an ignition source under conditions typically found in a scramjet combustor. Analytical studies indicate that the presence of hydrogen atoms should greatly reduce the ignition delay in this environment. Because hydrogen plasmas are prolific sources of hydrogen atoms, a low-power, uncooled hydrogen plasma torch has been built and tested to evaluate its potential as a possible flame holder for supersonic combustion. The torch was found to be unstable when operated on pure hydrogen; however, stable operation could be obtained by using argon as a body gas and mixing in the desired amount of hydrogen. The stability limits of the torch are delineated and its electrical and thermal behavior documented. An average torch thermal efficiency of around 88 percent is demonstrated.

  14. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

    SciTech Connect

    Marchack, Nathan; Kim, Taeseung; Chang, Jane P.; Blom, Hans-Olof

    2015-05-15

    The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

  15. Temperature of hydrogen radio frequency plasma under dechlorination process of polychlorinated biphenyls

    NASA Astrophysics Data System (ADS)

    Inada, Y.; Abe, K.; Kumada, A.; Hidaka, K.; Amano, K.; Itoh, K.; Oono, T.

    2014-10-01

    It has been reported that RF (radio frequency) hydrogen plasmas promote the dechlorination process of PCBs (polychlorinated biphenyls) under irradiation of MW (microwave). A relative emission intensity spectroscope system was used for single-shot imaging of two-dimensional temperature distributions of RF hydrogen plasmas generated in chemical solutions with several mixing ratios of isopropyl alcohol (IPA) and insulation oil under MW irradiation. Our experimental results showed that the plasma generation frequencies for the oil-contaminating solutions were higher than that for the pure IPA solution. In addition, the plasma temperature in the compound liquids including both oil and IPA was higher than that in the pure IPA and oil solutions. A combination of the plasma temperature measurements and plasma composition analysis indicated that the hydrogen radicals generated in a chemical solution containing the equal volumes of IPA and oil were almost the same amounts of H and H+, while those produced in the other solutions were mainly H.

  16. Temperature of hydrogen radio frequency plasma under dechlorination process of polychlorinated biphenyls

    SciTech Connect

    Inada, Y. Abe, K.; Kumada, A.; Hidaka, K.; Amano, K.; Itoh, K.; Oono, T.

    2014-10-27

    It has been reported that RF (radio frequency) hydrogen plasmas promote the dechlorination process of PCBs (polychlorinated biphenyls) under irradiation of MW (microwave). A relative emission intensity spectroscope system was used for single-shot imaging of two-dimensional temperature distributions of RF hydrogen plasmas generated in chemical solutions with several mixing ratios of isopropyl alcohol (IPA) and insulation oil under MW irradiation. Our experimental results showed that the plasma generation frequencies for the oil-contaminating solutions were higher than that for the pure IPA solution. In addition, the plasma temperature in the compound liquids including both oil and IPA was higher than that in the pure IPA and oil solutions. A combination of the plasma temperature measurements and plasma composition analysis indicated that the hydrogen radicals generated in a chemical solution containing the equal volumes of IPA and oil were almost the same amounts of H and H{sup +}, while those produced in the other solutions were mainly H.

  17. Effect of methane concentration in hydrogen plasma on hydrogen impurity incorporation in thick large-grained polycrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Tang, C. J.; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2015-09-01

    We investigate the impact of methane concentration in hydrogen plasma on the growth of large-grained polycrystalline diamond (PCD) films and its hydrogen impurity incorporation. The diamond samples were produced using high CH4 concentration in H2 plasma and high power up to 4350 W and high pressure (either 105 or 110 Torr) in a microwave plasma chemical vapor deposition (MPCVD) system. The thickness of the free-standing diamond films varies from 165 μm to 430 μm. Scanning electron microscopy (SEM), micro-Raman spectroscopy and Fourier-transform infrared (FTIR) spectroscopy were used to characterize the morphology, crystalline and optical quality of the diamond samples, and bonded hydrogen impurity in the diamond films, respectively. Under the conditions employed here, when methane concentration in the gas phase increases from 3.75% to 7.5%, the growth rate of the PCD films rises from around 3.0 μm/h up to 8.5 μm/h, and the optical active bonded hydrogen impurity content also increases more than one times, especially the two CVD diamond specific H related infrared absorption peaks at 2818 and 2828 cm-1 rise strongly; while the crystalline and optical quality of the MCD films decreases significantly, namely structural defects and non-diamond carbon phase content also increases a lot with increasing of methane concentration. Based on the results, the relationship between methane concentration and diamond growth rate and hydrogen impurity incorporation including the form of bonded infrared active hydrogen impurity in CVD diamonds was analyzed and discussed. The effect of substrate temperature on diamond growth was also briefly discussed. The experimental findings indicate that bonded hydrogen impurity in CVD diamond films mainly comes from methane rather than hydrogen in the gas source, and thus can provide experimental evidence for the theoretical study of the standard methyl species dominated growth mechanism of CVD diamonds grown with methane/hydrogen mixtures.

  18. Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

    DTIC Science & Technology

    2015-03-26

    Computer Engineering Graduate School of Engineering and Management Air Force Institute of Technology Air University Air Education and...Unfortunately, techniques for device scaling of ZnO TFTs have been restricted due to the processing and lithographic methods used for device fabrication...etching, or metal lift-off fabrication processes, resulting in relatively long channel length devices [21]. Shadow mask techniques offer little

  19. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    NASA Astrophysics Data System (ADS)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  20. Space hardware compatibility tests with hydrogen peroxide gas plasma sterilization

    NASA Astrophysics Data System (ADS)

    Faye, Delphine; Aguila, Alexandre; Debus, Andre; Remaury, Stephanie; Nabarra, Pascale; Darbord, Jacques C.; Soufflet, Caroline; Destrez, Philippe; Coll, Patrice; Coscia, David

    The exploration of the Solar System shall comply with planetary protection requirements handled presently by the Committee of Space Research (COSPAR). The goal of planetary protection is to protect celestial bodies from terrestrial contamination and also to protect the Earth environment from an eventual contamination carried by return samples or by space systems. For project teams, avoiding the biological contamination of other Solar System bodies such as Mars imposes to perform unusual tasks at technical and operational constraints point of view. The main are the reduction of bioburden on space hardware, the sterile integration of landers, the control of the biological cleanliness and the limitation of crash probability. In order to reduce the bioburden on spacecraft, the use of qualified sterilization processes may be envisaged. Since 1992 now, with the Mars96 mission, one of the most often used is the Sterrad(R) process working with hydrogen peroxide gas plasma. In the view of future Mars exploration programs, after tests performed in the frame of previous missions, a new test campaign has been performed on thermal coatings and miscellaneous materials coming from an experiment in order to assess the compatibility of space hardware and material with this sterilization process.

  1. Fe-catalyzed etching of graphene layers

    NASA Astrophysics Data System (ADS)

    Cheng, Guangjun; Calizo, Irene; Hight Walker, Angela; PML, NIST Team

    We investigate the Fe-catalyzed etching of graphene layers in forming gas. Fe thin films are deposited by sputtering onto mechanically exfoliated graphene, few-layer graphene (FLG), and graphite flakes on a Si/SiO2 substrate. When the sample is rapidly annealed in forming gas, particles are produced due to the dewetting of the Fe thin film and those particles catalyze the etching of graphene layers. Monolayer graphene and FLG regions are severely damaged and that the particles catalytically etch channels in graphite. No etching is observed on graphite for the Fe thin film annealed in nitrogen. The critical role of hydrogen indicates that this graphite etching process is catalyzed by Fe particles through the carbon hydrogenation reaction. By comparing with the etched monolayer and FLG observed for the Fe film annealed in nitrogen, our Raman spectroscopy measurements identify that, in forming gas, the catalytic etching of monolayer and FLG is through carbon hydrogenation. During this process, Fe particles are catalytically active in the dissociation of hydrogen into hydrogen atoms and in the production of hydrogenated amorphous carbon through hydrogen spillover.

  2. Hydrogen Balmer Series Self-Absorption Measurement in Laser-Induced Air Plasma

    NASA Astrophysics Data System (ADS)

    Gautam, Ghaneshwar; Parigger, Christian

    2015-05-01

    In experimental studies of laser-induced plasma, we use focused Nd:YAG laser radiation to generate optical breakdown in laboratory air. A Czerny-Turner type spectrometer and an ICCD camera are utilized to record spatially and temporally resolved spectra. Time-resolved spectroscopy methods are employed to record plasma dynamics for various time delays in the range of 0.300 microsecond to typically 10 microsecond after plasma initiation. Early plasma emission spectra reveal hydrogen alpha and ionized nitrogen lines for time delays larger than 0.3 microsecond, the hydrogen beta line emerges from the free-electron background radiation later in the plasma decay for time delays in excess of 1 microsecond. The self-absorption analyses include comparisons of recorded data without and with the use of a doubling mirror. The extent of self-absorption of the hydrogen Balmer series is investigated for various time delays from plasma generation. There are indications of self-absorption of hydrogen alpha by comparison with ionized nitrogen lines at a time delay of 0.3 microsecond. For subsequent time delays, self-absorption effects on line-widths are hardly noticeable, despite the fact of the apparent line-shape distortions. Of interest are comparisons of inferred electron densities from hydrogen alpha and hydrogen beta lines as the plasma decays, including assessments of spatial variation of electron density.

  3. Comment on 'Etch characteristics of CeO{sub 2} thin film in Ar/CF{sub 4}/Cl{sub 2} plasma' [J. Vac. Sci. Technol. A 21, 426 (2003)

    SciTech Connect

    Paparazzo, E.

    2004-09-01

    Comments are made on a recent article by Kim, Chang, and Kim [J. Vac. Sci. Technol. A 21, 426 (2003)], which describes the preparation and the x-ray photoemission spectroscopy study of the etching effects produced by Ar-based plasmas of different composition on the surface chemistry of a CeO{sub 2} film grown on Si. We discuss some chemical interactions taking place between Ce, Si, and the ambient humidity during the early stages of film deposition, and demonstrate that the many-body effects involved in Ce 3d spectra provide a key for better understanding of the etching mechanisms exerted by the plasma treatments.

  4. A two-dimensional model of the hydrogen plasma for a laser powered rocket

    NASA Technical Reports Server (NTRS)

    Keefer, D.; Crowder, H.; Elkins, R.

    1982-01-01

    A two-dimensional, closed-form model originally developed by Batteh and Keefer (1974) is modified and applied to the absorption of laser radiation by a hydrogen plasma. The model is used to predict the power absorbed by plasmas at one- and ten-atmosphere pressure as a function of laser beam radius. Predicted isotherms are given for one- and ten-atmosphere plasmas, together with thermal loading of the absorption chamber wall. The model is also used in predicting the laser power required to sustain a hydrogen plasma as a function of the absorption coefficient.

  5. Inactivation of possible micromycete food contaminants using the low-temperature plasma and hydrogen peroxide

    SciTech Connect

    Čeřovský, M.; Khun, J.; Rusová, K.; Scholtz, V.; Soušková, H.

    2013-09-15

    The inhibition effect of hydrogen peroxide aerosol, low-temperature plasma and their combinations has been studied on several micromycetes spores. The low-temperature plasma was generated in corona discharges in the open air apparatus with hydrogen peroxide aerosol. Micromycete spores were inoculated on the surface of agar plates, exposed solely to the hydrogen peroxide aerosol, corona discharge or their combination. After incubation the diameter of inhibition zone was measured. The solely positive corona discharge exhibits no inactivation effect, the solely negative corona discharge and solely hydrogen peroxide aerosol exhibit the inactivation effect, however their combinations exhibit to be much more effective. Low-temperature plasma and hydrogen peroxide aerosol present a possible alternative method of microbial decontamination of food, food packages or other thermolabile materials.

  6. Inactivation of possible micromycete food contaminants using the low-temperature plasma and hydrogen peroxide

    NASA Astrophysics Data System (ADS)

    Čeřovský, M.; Khun, J.; Rusová, K.; Scholtz, V.; Soušková, H.

    2013-09-01

    The inhibition effect of hydrogen peroxide aerosol, low-temperature plasma and their combinations has been studied on several micromycetes spores. The low-temperature plasma was generated in corona discharges in the open air apparatus with hydrogen peroxide aerosol. Micromycete spores were inoculated on the surface of agar plates, exposed solely to the hydrogen peroxide aerosol, corona discharge or their combination. After incubation the diameter of inhibition zone was measured. The solely positive corona discharge exhibits no inactivation effect, the solely negative corona discharge and solely hydrogen peroxide aerosol exhibit the inactivation effect, however their combinations exhibit to be much more effective. Low-temperature plasma and hydrogen peroxide aerosol present a possible alternative method of microbial decontamination of food, food packages or other thermolabile materials.

  7. Etching of glass microchips with supercritical water.

    PubMed

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  8. Emission of fast non-Maxwellian hydrogen atoms in low-density laboratory plasma

    NASA Astrophysics Data System (ADS)

    Brandt, Christian; Marchuk, Oleksandr; Pospieszczyk, Albrecht; Dickheuer, Sven

    2017-03-01

    The source of strong and broad emission of the Balmer-α line in mixed plasmas of hydrogen (or deuterium) and noble gases in front of metallic surfaces is a subject of controversial discussion of many plasma types. In this work the excitation source of the Balmer lines is investigated by means of optical emission spectroscopy in the plasma device PSI-2. Neutral fast non-Maxwellian hydrogen atoms are produced by acceleration of hydrogen ions towards an electrode immersed into the plasma. By variation of the electrode potential the energy of ions and in turn of reflected fast atoms can be varied in the range of 40-300 eV. The fast atoms in front of the electrode are observed simultaneously by an Echelle spectrometer (0.001 nm/channel) and by an imaging spectrometer (0.01 nm/channel) up to few cm in the plasma. Intense excitation channels of the Balmer lines are observed when hydrogen is mixed with argon or with krypton. Especially in Ar-H and Ar-D mixed plasmas the emission of fast hydrogen atoms is very strong. Intermixing hydrogen with other noble gases (He, Ne or Xe) one observes the same effect however the emission is one order of magnitude less compared to Kr-H or Kr-D plasmas. It is shown, that the key process, impacting this emission, is the binary collision between the fast neutral hydrogen atom and the noble gas atom. Two possible sources of excitation are discussed in details: one is the excitation of hydrogen atoms by argon atoms in the ground state and the second one is the process of the so-called excitation transfer between the metastable states of noble gases and hydrogen. In the latter case the atomic data for excitation of Balmer lines are still not available in literature. Further experimental investigations are required to conclude on the source process of fast atom emission.

  9. Deposition of a-SiC:H using organosilanes in an argon/hydrogen plasma

    SciTech Connect

    Maya, L.

    1993-12-01

    Selected organosilanes were examined as precursors for the deposition of amorphous hydrogenated silicon carbide in an argon/hydrogen plasma. Effect of process variables on the quality of the films was established by means of FTIR, Auger spectroscopy, XPS, XRD, chemical analysis, and weight losses upon pyrolysis. For a given power level there is a limiting feeding rate of the precursor under which operation of the system is dominated by thermodynamics and leads to high quality silicon carbide films that are nearly stoichiometric and low in hydrogen. Beyond that limit, carbosilane polymer formation and excessive hydrogen incorporation takes place. The hydrogen content of the plasma affects the deposition rate and the hydrogen content of the film. In the thermodynamically dominated regime the nature of the precursor has no effect on the quality of the film, it affects only the relative utilization efficiency.

  10. Optimum plasma grid bias for a negative hydrogen ion source operation with Cs

    SciTech Connect

    Bacal, Marthe; Sasao, Mamiko; Wada, Motoi; McAdams, Roy

    2016-02-15

    The functions of a biased plasma grid of a negative hydrogen (H{sup −}) ion source for both pure volume and Cs seeded operations are reexamined. Proper control of the plasma grid bias in pure volume sources yields: enhancement of the extracted negative ion current, reduction of the co-extracted electron current, flattening of the spatial distribution of plasma potential across the filter magnetic field, change in recycling from hydrogen atomic/molecular ions to atomic/molecular neutrals, and enhanced concentration of H{sup −} ions near the plasma grid. These functions are maintained in the sources seeded with Cs with additional direct emission of negative ions under positive ion and neutral hydrogen bombardment onto the plasma electrode.

  11. Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

    PubMed Central

    2017-01-01

    A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD.

  12. Thermodynamical Study on Production of Acetylene from Coal Pyrolysis in Hydrogen Plasma

    NASA Astrophysics Data System (ADS)

    Wang, Fei; Guo, Wenkang; Yuan, Xingqiu; Zhao, Taize

    2006-05-01

    The chemical thermodynamic equilibrium of acetylene production by coal pyrolysis in hydrogen plasma was studied. The thermodynamic equilibrium is obtained by using the method of free energy. Calculated results show that the hydrogen concentration in the equilibrium system is very important for the acetylene production by coal conversion and the energy consumption for the production of acetylene per-kilogram strongly depends on the hydrogen concentration and the temperature.

  13. Structure-related optical behavior of nanoscale GaN island, tip, tube and cone arrays formed by inductively coupled plasmas etching

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Ming; Huang, Pei-Hsing; Cheng, Nai-Jen; Hung, Shang-Chao

    2016-03-01

    We introduce a one-step self-assembled technique to form various nanostructures on N-type GaN film and then present an optical characterization of a series of low-dimensional GaN nanostructures by using low-temperature photoluminescence (LTPL) spectroscopy. Nanoscale GaN island, tip, tube and cone-like structures of diameters ranging from 50 to 190 nm were self-assembled on a c-axis perpendicular to substrate surface with uniform diameter and uniform length by inductively coupled plasmas etching process without lithography. Optical LTPL measurements on nanostructures show consistent variations in the properties of the fabricated GaN structures as a function of surface area of GaN nanostructures. LTPL mapping gives an evidence for defect-induced donors and/or acceptors near the facets of the ICP-etched nanostructure. Our results indicate that a higher concentration of donor-related defects is introduced on the surface of GaN nanotubes. In particular, the nanotubes sample exhibits a conspicuous increased in yellow luminescence intensity compared to the other nanostructure samples. This result may support more information for the application of nanotubes on nanogenerators.

  14. Plasma test on industrial diamond powder in hydrogen and air for fracture strength study

    NASA Astrophysics Data System (ADS)

    Chary, Rohit Asuri Sudharshana

    Diamonds are the most precious material all over the world. Ever since their discovery, the desire for natural diamonds has been great; recently, the demand has steeply increased, leading to scarcity. For example, in 2010, diamonds worth $50 billion were marketed. This increased demand has led to discovering alternative sources to replace diamonds. The diamond, being the hardest material on earth, could be replaced with no other material except another diamond. Thus, the industrial or synthetic diamond was invented. Because of extreme hardness is one of diamond's properties, diamonds are used in cutting operations. The fracture strength of diamond is one of the crucial factors that determine its life time as a cutting tool. Glow discharge is one of the techniques used for plasma formation. The glow discharge process is conducted in a vacuum chamber by ionizing gas atoms. Ions penetrate into the atomic structure, ejecting a secondary electron. The objective of this study is to determine the change in fracture strength of industrial diamond powder before and after plasma treatment. This study focuses mainly on the change in crystal defects and crushing strength (CS) of industrial diamond powder after the penetration of hydrogen gas, air and hydrogen-air mixture ions into the sample powder. For this study, an industrial diamond powder sample of 100 carats weight, along with its average fracture strength value was received from Engis Corporation, Illinois. The sample was divided into parts, each weighing 10-12 carats. At the University of Nevada, Las Vegas (UNLV), a plasma test was conducted on six sample parts for a total of 16 hours on each part. The three gas types mentioned above were used during plasma tests, with the pressure in vacuum chamber between 200 mTorr and 2 Torr. The plasma test on four sample parts was in the presence of hydrogen-air mixture. The first sample had chamber pressures between 200 mTorr and 400 mTorr. The remaining three samples had chamber

  15. Spectroscopic ellipsometry on Si/SiO{sub 2}/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

    SciTech Connect

    Eren, Baran; Fu, Wangyang; Marot, Laurent Calame, Michel; Steiner, Roland; Meyer, Ernst

    2015-01-05

    In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation.

  16. Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of NF{sub 3} and O{sub 2}

    SciTech Connect

    Tasaka, A.; Watanabe, E.; Kai, T.; Shimizu, W.; Kanatani, T.; Inaba, M.; Tojo, T.; Tanaka, M.; Abe, T.; Ogumi, Z.

    2007-03-15

    Reactive ion etching (RIE) of poly-{beta}-SiC was investigated in the NF{sub 3}/O{sub 2} mixture gas plasma. The addition of 10% oxygen concentration to the NF{sub 3} plasma increased the etching rate to {approx}80 nm/min at a total pressure of 10 Pa and 997 nm/min at a total pressure of 20 Pa. The ratio of increase in etching rate against that in the pure NF{sub 3} plasma was {approx}43%. RIE for longer than 30 min in the 90% NF{sub 3} and 10% O{sub 2} mixture gas plasma gave a much smoother surface than that etched in the pure NF{sub 3} plasma. However, the further addition of O{sub 2} decreased the etching rate. Optical-emission spectra indicated the presence of an oxygen radical, in addition to fluorine radical and molecular nitrogen cations, in the NF{sub 3}/O{sub 2} mixture gas plasma. X-ray photoemission spectroscopy analysis of the etched samples revealed that the SiO{sub 2} layer was formed on the surface at the higher O{sub 2} concentration. The role of oxygen in the NF{sub 3}/O{sub 2} mixture gas plasma was elucidated. Scanning electron microscopy observation revealed that many thornlike substances, i.e., spikes, were formed on the SiC surface during RIE at the total pressure of 10 Pa. Images of the cross section of spike formed during RIE at the total pressure of 2 Pa also indicated that the sputtered aluminum particle from a mask may be preferentially deposited on the top of carbon-rich island formed on the SiC surface and act as a micromask together with carbon on the carbon-rich island to form a thornlike spike. An etching model of the SiC surface and the mechanism on formation and growth of the spike on the SiC surface in the NF{sub 3}/O{sub 2} mixture gas plasma are proposed.

  17. Replacement of hydrogen peroxide cleaning with oxygen plasma

    NASA Astrophysics Data System (ADS)

    Adams, B. E.

    1992-03-01

    Comparison between the standard peroxide cleaning method and an oxygen plasma modified version was run on thin film bond monitors. The plasma modified version substituted oxygen plasma for the peroxide cleaning step in the process and reduced the DI rinse water temperature from 75 C to 25 C. A direct surface cleanliness comparison was made between the two cleaning methods using Auger spectroscopy. A beam lead and ribbon bonding experiment was also run on plasma-cleaned networks. Results of both experiments indicate that plasma cleaning is superior to peroxide cleaning and that reliable bonding can be done on plasma-cleaned thin film networks.

  18. Hydrogen pumping and release by graphite under high flux plasma bombardment

    SciTech Connect

    Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

    1988-01-01

    Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux approx. = 1 x 10/sup 18/ ions s/sup -1/ cm/sup -2/ to a fluence of the order of 10/sup 21/ ions/cm/sup 2/ and at temperatures around 800/sup 0/C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10/sup 18/ H/cm/sup 2/ at temperatures below 100/sup 0/C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480/sup 0/C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10/sup 17/ H/cm/sup 2/. The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs.

  19. Real-time monitoring of reactive species in downstream etch reactor by VUV broad-band absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Soriano, R.; Vallier, L.; Cunge, G.; Sadeghi, N.

    2016-09-01

    Plasma etching of nanometric size, high aspect-ratio structures is more challenging at each new technological node. Remote plasmas are beginning to find use when damages on nanostructures by ion bombardment become critical or when etching with high selectivity on different materials present on the wafer is necessary (i . e . tungsten oxide etching with fluorine and hydrogen containing plasmas in remote reactor from AMAT). Furthermore, it is expected that downstream plasma will replace many wet chemical etching processes to alleviate the issue of pattern collapses caused by capillary forces when nanometer size high aspect ratio structures are immersed in liquids. In these downstream plasmas, radicals are the main active species and a control of their density is of prime importance. Most of gases used and radicals produced in etching plasmas (HBr, BrCl, Br2, NF3, CH2F2,...) have strong absorption bands in the vacuum UV spectral region and we have shown that very low concentration of these species can be detected by VUV absorption. We have recently improved the technique by using a VUV CCD camera, instead of the PMT, which render possible the Broad-Band absorption spectroscopy in the 120-200 nm range, with a deuterium lamp, or a laser produced xenon arc lamp as light source. The multi-spectral detection ability of the CCD reduces the acquisition time to less than 1 second and can permit the real time control of the process control.

  20. Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

    SciTech Connect

    Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng

    2010-07-15

    This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

  1. Isotopic effect of parametric instabilities during lower hybrid waves injection into hydrogen/deuterium plasmas

    NASA Astrophysics Data System (ADS)

    Zhao, Aihui; Gao, Zhe

    2017-01-01

    Based on the local dispersion relation, the parametric instability (PI) was numerically investigated for the injection of lower hybrid waves (LHWs) into hydrogen and deuterium plasmas separately. Numerical calculations under typical scrape-off layer parameters in tokamak plasmas show that both the unstable regions of the PI and the values of growth rates are close for two cases, in spite of the decaying channel of the ion sound quasimode or ion cyclotron quasimode (ICQM). These numerical results could be understood by the analyses based on the fluid model. Parameter dependences are also similar for hydrogen and deuterium plasmas. For example, the ICQM growth rate increases with an increasing density, a decreasing temperature, and a decreasing magnetic field in deuterium plasmas as it does in hydrogen plasmas. The isotopic effect of the PI during the LHW injection is weak. As a result, the lower hybrid current drive efficiency at a high density in deuterium plasmas cannot be much improved over hydrogen plasmas if the PI process dominates the behavior of LHWs at the plasma edge.

  2. Detector and energy analyzer for energetic-hydrogen in beams and plasmas

    DOEpatents

    Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

    1988-01-01

    A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

  3. Detector and energy analyzer for energetic-hydrogen in beams and plasmas

    DOEpatents

    Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

    1988-11-01

    A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

  4. Hydrogen Storage in Diamond Powder Utilizing Plasma NaF Surface Treatment for Fuel Cell Applications

    SciTech Connect

    Leal, David A.; Leal-Quiros, E.; Velez, Angel; Prelas, Mark A.; Gosh, Tushar

    2006-12-04

    Hydrogen Fuel Cells offer the vital solution to the world's socio-political dependence on oil. Due to existing difficulty in safe and efficient hydrogen storage for fuel cells, storing the hydrogen in hydrocarbon compounds such as artificial diamond is a realistic solution. By treating the surface of the diamond powder with a Sodium Fluoride plasma exposure, the surface of the diamond is cleaned of unwanted molecules. Due to fluorine's electro negativity, the diamond powder is activated and ready for hydrogen absorption. These diamond powder pellets are then placed on a graphite platform that is heated by conduction in a high voltage circuit made of tungsten wire. Then, the injection of hydrogen gas into chamber allows the storage of the Hydrogen on the surface of the diamond powder. By neutron bombardment in the nuclear reactor, or Prompt Gamma Neutron Activation Analysis, the samples are examined for parts per million amounts of hydrogen in the sample. Sodium Fluoride surface treatment allows for higher mass percentage of stored hydrogen in a reliable, resistant structure, such as diamond for fuel cells and permanently alters the diamonds terminal bonds for re-use in the effective storage of hydrogen. The highest stored amount utilizing the NaF plasma surface treatment was 22229 parts per million of hydrogen in the diamond powder which amounts to 2.2229% mass increase.

  5. Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials.

    PubMed

    Varghese, Abin; Sharma, Chithra H; Thalakulam, Madhu

    2017-03-17

    A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology, is of paramount importance in realizing all-two-dimensional logic circuits and to move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS2 and other vW materials. Using this technique we etch MoS2 flakes layer-by-layer starting from an arbitrary thickness and area down to the mono- or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as graphene, h-BN and WSe2. In addition, using microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme making this process a potential candidate for large scale device fabrication in addition to layer engineering.

  6. Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

    NASA Astrophysics Data System (ADS)

    Iwase, Taku; Matsui, Miyako; Yokogawa, Kenetsu; Arase, Takao; Mori, Masahito

    2016-06-01

    The etching of polycrystalline silicon (poly-Si)/SiO2 stacks by using VHF plasma was studied for three-dimensional NAND fabrication. One critical goal is achieving both a vertical profile and high throughput for multiple-stack etching. While the conventional process consists of multiple steps for each stacked layer, in this study, HBr/fluorocarbon-based gas chemistry was investigated to achieve a single-step etching process to reduce process time. By analyzing the dependence on wafer temperature, we improved both the etching profile and rate at a low temperature. The etching mechanism is examined considering the composition of the surface reaction layer. X-ray photoelectron spectroscopy (XPS) analysis revealed that the adsorption of N-H and Br was enhanced at a low temperature, resulting in a reduced carbon-based-polymer thickness and enhanced Si etching. Finally, a vertical profile was obtained as a result of the formation of a thin and reactive surface-reaction layer at a low wafer temperature.

  7. Energy density dependence of hydrogen combustion efficiency in atmospheric pressure microwave plasma

    SciTech Connect

    Yoshida, T.; Ezumi, N.; Sawada, K.; Tanaka, Y.; Tanaka, M.; Nishimura, K.

    2015-03-15

    The recovery of tritium in nuclear fusion plants is a key issue for safety. So far, the oxidation procedure using an atmospheric pressure plasma is expected to be part of the recovery method. In this study, in order to clarify the mechanism of hydrogen oxidation by plasma chemistry, we have investigated the dependence of hydrogen combustion efficiency on gas flow rate and input power in the atmospheric pressure microwave plasma. It has been found that the combustion efficiency depends on energy density of absorbed microwave power. Hence, the energy density is considered as a key parameter for combustion processes. Also neutral gas temperatures inside and outside the plasma were measured by an optical emission spectroscopy method and thermocouple. The result shows that the neutral gas temperature in the plasma is much higher than the outside temperature of plasma. The high neutral gas temperature may affect the combustion reaction. (authors)

  8. Heating of a Magnetized High Density Hydrogen Plasma Column Around the ICR Frequency

    NASA Astrophysics Data System (ADS)

    Graswinckel, M. F.; Guadamuz, S.; Koch, R.; Maggiora, R.; Van De Pol, M.; Vietti, G.; Van Rooij, G.

    2011-12-01

    A single and double loop antenna system are investigated in the ICR frequency range (5-25 MHz) to enable control of the plasma temperature in a 1-10 cm diameter, 1020 m-3 hydrogen plasma column in B = 0.8T Wave propagation is evaluated on basis of damping lengths derived from the dispersion relation. The antenna is numerically analyzed with the TOPCYL code. Simulation results are compared with measured loading resistances and good agreement was found for the vacuum and saltwater column cases. Hydrogen plasma loading resistances determined from network analyzer measurements are typically higher than those predicted from simulation. This points to coupling of RF power to additional loss mechanisms. High RF power operation (1 kW) of the antenna increased the power deposited on the plasma endplate and accelerated the plasma, but the plasma temperature near the endplate remained constant.

  9. The contribution of dissociative processes to the production of atomic lines in hydrogen plasmas

    NASA Technical Reports Server (NTRS)

    Kunc, J. A.

    1985-01-01

    The contribution of molecular dissociative processes to the production of atomic lines is considered for a steady-state hydrogen plasma. If the contribution of dissociative processes is dominant, a substantial simplification in plasma diagnostics can be achieved. Numerical calculations have been performed for the production of Balmer alpha, beta, and gamma lines in hydrogen plasmas with medium and large degrees of ionization (x greater than about 0.0001) and for electron temperatures of 5000-45,000 K and electron densities of 10 to the 10th to 10 to the 16th/cu cm.

  10. The Diagnostics Of Hydrogen-Cesium Plasma Using Fully Relativistic Electron Impact Cross Sections

    NASA Astrophysics Data System (ADS)

    Priti, Priti; Dipti, Dipti; Gangwar, Reetesh; Srivastava, Rajesh

    2016-10-01

    Electron excitation cross-sections and rate coefficients have been calculated using fully relativistic distorted wave theory for several fine-structure transitions from the ground as well as excited states of cesium atom in the wide range of incident electron energy. These processes play dominant role in low pressure hydrogen-cesium plasma relevant to the negative ion based neutral beam injectors for the ITER project. The calculated cross-sections are used to construct a reliable collisional radiative (CR) model to characterize the hydrogen-cesium plasma. The calculated plasma parameters are compared with the available experimental and theoretical results.

  11. Etching method for photoresists or polymers

    NASA Technical Reports Server (NTRS)

    Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

    1991-01-01

    A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

  12. Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions

    NASA Astrophysics Data System (ADS)

    Tang, C. J.; Hou, Haihong; Fernandes, A. J. S.; Jiang, X. F.; Pinto, J. L.; Ye, H.

    2017-02-01

    In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 μm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm-1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

  13. In vitro study of 3D PLGA/n-HAp/β-TCP composite scaffolds with etched oxygen plasma surface modification in bone tissue engineering

    NASA Astrophysics Data System (ADS)

    Roh, Hee-Sang; Jung, Sang-Chul; Kook, Min-Suk; Kim, Byung-Hoon

    2016-12-01

    Three-dimensional (3D) scaffolds have many advantageous properties for bone tissue engineering application, due to its controllable properties such as pore size, structural shape and interconnectivity. In this study, effects on oxygen plasma surface modification and adding of nano-hydroxyapatite (n-HAp) and β-tricalcium phosphate (β-TCP) on the 3D PLGA/n-HAp/β-TCP scaffolds for improving preosteoblast cell (MC3T3-E1) adhesion, proliferation and differentiation were investigated. The 3D PLGA/n-HAp/β-TCP scaffolds were fabricated by 3D Bio-Extruder equipment. The 3D scaffolds were prepared with 0°/90° architecture and pore size of approximately 300 μm. In addition 3D scaffolds surface were etched by oxygen plasma to enhance the hydrophilic property and surface roughness. After oxygen plasma treatment, the surface chemistry and morphology were investigated by Fourier transform infrared spectroscopy, scanning electron microscopy, and atomic force microscopy. And also hydrophilic property was measured by contact angle. The MC3T3-E1 cell proliferation and differentiation were investigated by MTT assay and ALP activity. In present work, the 3D PLGA/HAp/beta-TCP composite scaffold with suitable structure for the growth of osteoblast cells was successfully fabricated by 3D rapid prototyping technique. The surface hydrophilicity and roughness of 3D scaffold increased by oxygen plasma treatment had a positive effect on cell adhesion, proliferation, and differentiation. Furthermore, the differentiation of MC3T3-E1 cell was significantly enhanced by adding of n-HAp and β-TCP on 3D PLGA scaffold. As a result, combination of bioceramics and oxygen plasma treatment showed a synergistic effect on biocompatibility of 3D scaffolds. This result confirms that this technique was useful tool for improving the biocompatibility in bone tissue engineering application.

  14. Selective etching of silicon carbide films

    DOEpatents

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  15. Thermodynamic assessment and experimental verification of reactive ion etching of magnetic metal elements

    SciTech Connect

    Kim, Taeseung; Chen, Jack Kun-Chieh; Chang, Jane P.

    2014-07-01

    A thermodynamic analysis of etch chemistries for Co, Fe, and Ni using a combination of hydrogen, oxygen, and halogen gases suggested that a single etchant does not work at 300 K; however, a sequential exposure to multiple etchants results in sufficiently high partial pressure of the reaction products for the process to be considered viable. This sequential dose utilized the two reactions, a surface halogenation followed by the secondary etchant exposure. (MX{sub 2} (c) + 3Y →MY(g) + 2XY(g), where M = Co, Fe, Ni; X = F, Cl, Br; Y = O, H) The volatilization reaction induced by sequential plasma exposure changed the equilibrium point, increasing the partial pressure of the etch product. Amongst all combinations, Cl{sub 2} or Br{sub 2} plasmas followed by H{sub 2} plasma were the most effective. From both the gas phase diagnostics and surface composition analysis, H{sub 2} plasma alone could not etch metallic Co, Fe, and Ni films but alternating doses of Cl{sub 2} and H{sub 2} plasmas resulted in more effective removal of chlorinated metals and increased the overall etch rate.

  16. Method for dry etching of transition metals

    DOEpatents

    Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

    1998-09-29

    A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

  17. Method for dry etching of transition metals

    DOEpatents

    Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

    1998-01-01

    A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

  18. [Study on the Emission Spectrum of Hydrogen Production with Microwave Discharge Plasma in Ethanol Solution].

    PubMed

    Sun, Bing; Wang, Bo; Zhu, Xiao-mei; Yan, Zhi-yu; Liu, Yong-jun; Liu, Hui

    2016-03-01

    Hydrogen is regarded as a kind of clean energy with high caloricity and non-pollution, which has been studied by many experts and scholars home and abroad. Microwave discharge plasma shows light future in the area of hydrogen production from ethanol solution, providing a new way to produce hydrogen. In order to further improve the technology and analyze the mechanism of hydrogen production with microwave discharge in liquid, emission spectrum of hydrogen production by microwave discharge plasma in ethanol solution was being studied. In this paper, plasma was generated on the top of electrode by 2.45 GHz microwave, and the spectral characteristics of hydrogen production from ethanol by microwave discharge in liquid were being studied using emission spectrometer. The results showed that a large number of H, O, OH, CH, C2 and other active particles could be produced in the process of hydrogen production from ethanol by microwave discharge in liquid. The emission spectrum intensity of OH, H, O radicals generated from ethanol is far more than that generated from pure water. Bond of O-H split by more high-energy particles from water molecule was more difficult than that from ethanol molecule, so in the process of hydrogen production by microwave discharge plasma in ethanol solution; the main source of hydrogen was the dehydrogenation and restructuring of ethanol molecules instead of water decomposition. Under the definite external pressure and temperature, the emission spectrum intensity of OH, H, O radicals increased with the increase of microwave power markedly, but the emission spectrum intensity of CH, C2 active particles had the tendency to decrease with the increase of microwave power. It indicated that the number of high energy electrons and active particles high energy electron energy increased as the increase of microwave power, so more CH, C2 active particles were split more thoroughly.

  19. Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma

    NASA Astrophysics Data System (ADS)

    Shen, Lanlan; Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Liu, Bo; Wu, Liangcai; Cheng, Yan; Feng, Songlin

    2016-10-01

    Recently, carbon-doped Ge2Sb2Te5 (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF4/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge2Sb2Te5 (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF4 is needed for high etch rate and 10% less CF4 for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF4 etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.

  20. Bactericidal effect of plasma jet with helium flowing through 3% hydrogen peroxide against Enterococcus faecalis.

    PubMed

    Zhou, Xin-Cai; Li, Yu-Lan; Liu, De-Xi; Cao, Ying-Guang; Lu, Xin-Pei

    2016-11-01

    The aim of the present study was to assess the antimicrobial activity of plasma jet with helium (He) flowing through 3% hydrogen peroxide in root canals infected with Enterococcus faecalis. A total of 42 single-rooted anterior teeth were prepared, sterilized, inoculated with an E. faecalis suspension and incubated for 7 days. Next, the teeth were randomly divided into six experimental groups (including groups treated by plasma jet with or without He for different time durations) and one control group treated without plasma. The number of surviving bacteria in each canal was determined by counting the colony forming units (CFU)/ml on nutrient agar plates. The results indicated that statistically significant reduction in CFU/ml (P<0.005) existed for all treatment groups relative to the control group. The greatest reductions in CFU/ml were observed for Group 3 (7.027 log unit reduction) and Group 2 (6.237 log unit reduction), which were treated by plasma jet sterilization with He flowing through 3% hydrogen peroxide for 4 min or for 2 min, respectively. In addition, the reduction in Group 3 was significantly greater compared with that in Group 2 or in the groups treated by plasma jet sterilization without He flowing through 3% hydrogen peroxide for 1, 2 or 4 min. In conclusion, plasma jet with or without He flowing through 3% hydrogen peroxide can effectively sterilized root canals infected with E. faecalis and should be considered as an alternative method for root canal disinfection in endodontic treatments.

  1. Inductively coupled plasma–reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl{sub 3} pretreatment in Cl{sub 2}/Ar plasma chemistry

    SciTech Connect

    Shah, Amit P.; Laskar, Masihhur R.; Azizur Rahman, A.; Gokhale, Maheshwar R.; Bhattacharya, Arnab

    2013-11-15

    Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{sub 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.

  2. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    SciTech Connect

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2015-11-11

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C4F8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C4F8 injection and synchronized plasma-based low energy Ar+ ion bombardment has been established for SiO2.1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF3 as a precursor is examined and compared to C4F8. CHF3 is shown to enable selective SiO2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.

  3. Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma

    SciTech Connect

    Metzler, Dominik; Oehrlein, Gottlieb S.; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.

    2016-01-15

    The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and compared to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.

  4. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    NASA Astrophysics Data System (ADS)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  5. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    PubMed

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  6. Plasma Transport in a Magnetic Multicusp Negative Hydrogen Ion Source

    DTIC Science & Technology

    1991-12-01

    the Extraction Electrode ............................ 4-4 Analysis of the Effect of Temperature Gradients on the Flux...Measured vs Predicted Ion Species Percentages ......... 5-31 x Abstract An analysis of plasma transport through the magnetic filter in mag- netic...diffusion through the magnetic filter field into the extraction chamber. The goal was not, however, simply to calculate the plasma potential. Analysis of

  7. Quantitative Analysis of CF4 Produced in the SiO2 Etching Process Using c-C4F8, C3F8, and C2F6 Plasmas by In Situ Mass Spectrometry

    NASA Astrophysics Data System (ADS)

    Furuya, Kenji; Hatano, Yoshihiko

    2004-01-01

    The use of CF32+ as a specific product ion to selectively quantify CF4 produced in the SiO2 etching process using plasmas of perfluorocompounds (PFCs), such as c-C4F8, C3F8, and C2F6, has been proposed and investigated in the present experiments by measuring mass spectra inside and outside the plasmas. It is known that the CF32+ ion does not appear in the mass spectra of any stable PFCs, except for CF4. It is confirmed in the present experiments that the quantity of CF32+ originating from the CF3 radical in the mass spectra measured in situ is negligible. Other unstable chemical species in the plasmas are too small in quantity to explain the intensity of CF32+ appearing in the mass spectra measured in situ, even if they could produce stable CF32+ by ionization. It is therefore concluded that CF32+ can be used as a fingerprint of CF4 in mass spectrometry. Application of this new method for the quantitative analysis of CF4 produced in the SiO2 etching process using PFC plasmas results in CF4 production advancing significantly not only in the etching region of SiO2 but also in the downstream region of the plasmas.

  8. Simulation of DBD plasma actuators, and nanoparticle-plasma interactions in argon-hydrogen CCP RF discharges

    NASA Astrophysics Data System (ADS)

    Mamunuru, Meenakshi

    The focus of this work is modeling and simulation of low temperature plasma discharges (LTPs). The first part of the thesis consists of the study of dielectric barrier (DBD) plasma actuators. Use of DBD plasma actuators on airfoil surfaces is a promising method for increasing airfoil efficiency. Actuators produce a surface discharge that causes time averaged thrust in the neutral gas. The thrust modifies the boundary layer properties of the flow and prevents the occurrence of separation bubbles. In simulating the working of an actuator, the focus is on the spatial characteristics of the thrust produced by the discharge over very short time and space scales. The results provide an understanding of the causes of thrust, and the basic principles behind the actuator operation. The second part of this work focusses on low pressure plasma discharges used for silicon nanoparticle synthesis. When reactive semiconductor precursor gases are passed through capacitively coupled plasma (CCP) radio frequency (RF) reactors, nano sized particles are formed. When the reactors are operated at high enough powers, a very high fraction of the nanoparticles are crystallized in the chamber. Nanoparticle crystallization in plasma is a very complex process and not yet fully understood. It can be inferred from experiments that bulk and surface processes initiated due to energetic ion impaction of the nanoparticles are responsible for reordering of silicon atoms, causing crystallization. Therefore, study of plasma-particle interactions is the first step towards understanding how particles are crystallized. The specific focus of this work is to investigate the experimental evidence that hydrogen gas presence in argon discharges used for silicon nanocrystal synthesis, leads to a superior quality of nanocrystals. Influence of hydrogen gas on plasma composition and discharge characteristics is studied. Via Monte Carlo simulation, distribution of ion energy impacting particles surface is studied

  9. Hydrogen manufacturing using plasma reformers. [Annual progress report], May 1, 1995--December 31, 1995

    SciTech Connect

    Cohn, D.R.; Bromberg, L.; Hochgreb, S.; O`Brien, C.; Rabinovich, A.

    1995-12-31

    Manufacturing of hydrogen from hydrocarbon fuels is needed for a variety of applications. These applications include fuel cells used in stationary electric power production and in vehicular propulsion. Hydrogen can also be used for various combustion engine systems. There is a wide range of requirements on the capacity of the hydrogen manufacturing system, the purity of the hydrogen fuel, and capability for rapid response. The overall objectives of a hydrogen manufacturing facility are to operate with high availability at the lowest possible cost and to have minimal adverse environmental impact. Plasma technology has potential to significantly alleviate shortcomings of conventional means of manufacturing hydrogen. These shortcomings include cost and deterioration of catalysts; limitations on hydrogen production from heavy hydrocarbons; limitations on rapid response; and size and weight requirements. In addition, use of plasma technology could provide for a greater variety of operating modes in particular the possibility of virtual elimination Of C0{sub 2} production by pyrolytic operation. This mode of hydrogen production may be of increasing importance due to recent additional evidence of global warming.

  10. Combined laser induced ignition and plasma spectroscopy: Fundamentals and application to a hydrogen air combustor

    NASA Astrophysics Data System (ADS)

    Zimmer, L.; Okai, K.; Kurosawa, Y.

    2007-12-01

    Combined Laser Induced Ignition and Plasma Spectroscopy (LI2PS) has the potential to give the exact local composition of a mixture at the ignition point and at the ignition time. However, as different laser energies are required to ignite a particular mixture as function of space, the typical approach using two power meters to calibrate the plasma spectroscopy measurement is not well suited. Furthermore, LI2PS requires single shot measurements and therefore high accuracy. In this paper, a novel calibration scheme is presented for application of Laser Induced Plasma Spectroscopy (LIPS) to gaseous analyses. Numerical simulations of air spectra are used to show that species emission can be used directly from the broadband spectra to determine the plasma conditions. The ratio of nitrogen emission around 744 nm and around 870 nm is found to be a sensitive indication of temperature in the emission ranging from 700 to 890 nm. Comparisons with experimental spectra show identical tendencies and validate the findings of the simulations. This approach is used in a partially-premixed hydrogen-air burner. First, helium is used instead of hydrogen. After an explanation of timing issue related to LIPS, it is shown that the calibration required depends only on nitrogen excitation and nitrogen-hydrogen ratio, without the need to know the deposited power. Measurements of the fuel distribution as function of injection momentum and spatial localization are reported. To illustrate the use of such a single shot approach, combined laser ignition and plasma spectroscopy is proposed. In this case, the calibration is based on hydrogen excitation and hydrogen-oxygen and hydrogen-nitrogen ratio. Results obtained with LI2PS show that ignition is successful only for high power and relatively high hydrogen concentration compared to the local mean. It is expected that LI2PS will become an important tool when dealing with partially-premixed or diffusion flame ignition.

  11. Optimization of the output and efficiency of a high power cascaded arc hydrogen plasma source

    SciTech Connect

    Vijvers, W. A. J.; Gils, C. A. J. van; Goedheer, W. J.; Meiden, H. J. van der; Veremiyenko, V. P.; Westerhout, J.; Lopes Cardozo, N. J.; Rooij, G. J. van; Schram, D. C.

    2008-09-15

    The operation of a cascaded arc hydrogen plasma source was experimentally investigated to provide an empirical basis for the scaling of this source to higher plasma fluxes and efficiencies. The flux and efficiency were determined as a function of the input power, discharge channel diameter, and hydrogen gas flow rate. Measurements of the pressure in the arc channel show that the flow is well described by Poiseuille flow and that the effective heavy particle temperature is approximately 0.8 eV. Interpretation of the measured I-V data in terms of a one-parameter model shows that the plasma production is proportional to the input power, to the square root of the hydrogen flow rate, and is independent of the channel diameter. The observed scaling shows that the dominant power loss mechanism inside the arc channel is one that scales with the effective volume of the plasma in the discharge channel. Measurements on the plasma output with Thomson scattering confirm the linear dependence of the plasma production on the input power. Extrapolation of these results shows that (without a magnetic field) an improvement in the plasma production by a factor of 10 over where it was in van Rooij et al. [Appl. Phys. Lett. 90, 121501 (2007)] should be possible.

  12. Numerical simulations based on probe measurements in EUV-induced hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Abrikosov, Alex; Reshetnyak, Viktor; Astakhov, Dmitry; Dolgov, Alexandr; Yakushev, Oleg; Lopaev, Dmitry; Krivtsun, Vladimir

    2017-04-01

    We use the two-dimensional particle-in-cell model with Monte Carlo collisions to study the plasma induced in hydrogen by short pulses of extreme ultraviolet (EUV) radiation at wavelengths in the range 10–20 nm with a pulse duration of about 40 ns (FWHM). This plasma is formed via both photoionization by the high-energy EUV photons and by the secondary photoelectrons emitted from the hydrogen molecules and the irradiated surface. The latter process can be enhanced by the external electric field that accelerates the electrons. In order to establish a base for our model so as to obtain accurate results, we record a temporally-resolved series of current–voltage characteristics for a small probing electrode inserted into EUV-induced hydrogen plasma. We then resort to simulating this plasma in the same geometry with the probe in our model which we validate by matching its results to the experimentally measured dynamics of the probe current–voltage curves. Having validated the model this way, we use this model as an independent instrument capable of obtaining the spatiotemporal picture of EUV-induced plasma evolution. We use this instrument to study the plasma formation during the EUV pulse and point out the processes that take part in forming this plasma, such as impact ionization and direct ionization by EUV photons.

  13. Stark broadening of hydrogen lines in magnetic fusion plasmas

    NASA Astrophysics Data System (ADS)

    Rosato, J.; Godbert-Mouret, L.; Koubiti, M.; Marandet, Y.; Stamm, R.

    2017-03-01

    We report on a Stark line shape model for the diagnostic of tokamak edge plasmas. In specific scenarios, plasma discharges are carried out at high density regimes, sufficiently so that the spectral lines emitted by the neutral atoms present in the edge and in the divertor region are affected by the plasma microscopic electric field (Stark broadening). We present new line shape calculations, carried out for diagnostic purposes in the context of the MST1 (Medium Sized Tokamak) European campaign. The role of the magnetic field (Zeeman effect) on line spectra is discussed.

  14. Copper-assisted, anti-reflection etching of silicon surfaces

    DOEpatents

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  15. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Vesel, Alenka; Mozetic, Miran; Balat-Pichelin, Marianne

    2016-11-01

    Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  16. Microinstabilities in hydrogen- and helium-dominated multi-ion-species plasmas in LHD

    NASA Astrophysics Data System (ADS)

    Nunami, Masanori; Nakata, Motoki; Sugama, Hideo; Tanaka, Kenji; Toda, Shinichiro

    2017-04-01

    The ion scale microinstabilities in the large helical device (LHD) are investigated by the gyrokinetic simulations for the multi-ion-species plasmas including hydrogen, helium, and impurity ions. The observations in the LHD experiments show that the ion temperature increases with the decreases of the ratio of hydrogen density to helium density. It is found from the linear gyrokinetic simulations with the multi-ion-species and real-mass kinetic electrons in the LHD discharges that the growth rates of the ion scale microinstabilities are reduced for the helium-dominated multi-species plasma compared with the hydrogen-dominated one. In addition to the differences of the conditions including the temperature, the density profiles, and the temperature ratio between both plasmas, due to the dependence on the mass number and the electric charge of the mixed ion species, the mixing length estimates obtained from the linear simulations predicts smaller ion thermal diffusivity for the helium-dominated plasma than the hydrogen-dominated one in the hydrogen gyro-Bohm unit, which is consistent with the experimental results.

  17. Quantification of the VUV radiation in low pressure hydrogen and nitrogen plasmas

    NASA Astrophysics Data System (ADS)

    Fantz, U.; Briefi, S.; Rauner, D.; Wünderlich, D.

    2016-08-01

    Hydrogen and nitrogen containing discharges emit intense radiation in a broad wavelength region in the VUV. The measured radiant power of individual molecular transitions and atomic lines between 117 nm and 280 nm are compared to those obtained in the visible spectral range and moreover to the RF power supplied to the ICP discharge. In hydrogen plasmas driven at 540 W of RF power up to 110 W are radiated in the VUV, whereas less than 2 W is emitted in the VIS. In nitrogen plasmas the power level of about 25 W is emitted both in the VUV and in the VIS. In hydrogen-nitrogen mixtures, the NH radiation increases the VUV amount. The analysis of molecular and atomic hydrogen emission supported by a collisional radiative model allowed determining plasma parameters and particle densities and thus particle fluxes. A comparison of the fluxes showed that the photon fluxes determined from the measured emission are similar to the ion fluxes, whereas the atomic hydrogen fluxes are by far dominant. Photon fluxes up to 5  ×  1020 m-2 s-1 are obtained, demonstrating that the VUV radiation should not be neglected in surface modifications processes, whereas the radiant power converted to VUV photons is to be considered in power balances. Varying the admixture of nitrogen to hydrogen offers a possibility to tune photon fluxes in the respective wavelength intervals.

  18. The plasma membrane sodium-hydrogen exchanger and its role in physiological and pathophysiological processes.

    PubMed

    Mahnensmith, R L; Aronson, P S

    1985-06-01

    The plasma membranes of most if not all vertebrate cells contain a transport system that mediates the transmembrane exchange of sodium for hydrogen. The kinetic properties of this transport system include a 1:1 stoichiometry, affinity for lithium and ammonium ion in addition to sodium and hydrogen, the ability to function in multiple 1:1 exchange modes involving these four cations, sensitivity to inhibition by amiloride and its analogues, and allosteric regulation by intracellular protons. The plasma membrane sodium-hydrogen exchanger plays a physiological role in the regulation of intracellular pH, the control of cell growth and proliferation, stimulus-response coupling in white cells and platelets, the metabolic response to hormones such as insulin and glucocorticoids, the regulation of cell volume, and the transepithelial absorption and secretion of sodium, hydrogen, bicarbonate and chloride ions, and organic anions. Preliminary evidence raises the possibility that the sodium-hydrogen exchanger may play a pathophysiological role in such diverse conditions as renal acid-base disorders, essential hypertension, cancer, and tissue or organ hypertrophy. Thus, future research on cellular acid-base homeostasis in general, and on plasma membrane sodium-hydrogen exchange in particular, will enhance our understanding of a great variety of physiological and pathophysiological processes.

  19. Remote operation of the GOLEM tokamak with hydrogen and helium plasmas

    NASA Astrophysics Data System (ADS)

    Svoboda, V.; Dvornova, A.; Dejarnac, R.; Prochazka, M.; Zaprianov, S.; Akhmethanov, R.; Bogdanova, M.; Dimitrova, M.; Dimitrov, Zh; Grover, O.; Hlavata, L.; Ivanov, K.; Kruglov, K.; Marinova, P.; Masherov, P.; Mogulkin, A.; Mlynar, J.; Stockel, J.; Volynets, A.

    2016-10-01

    The GOLEM tokamak was operated remotely via Internet connection during the 6th International Workshop and Summer School on Plasma Physics. Performances of hydrogen and helium discharges are compared in this paper. It is found, at similar vacuum conditions, that helium discharges are shorter but the breakdown of the working gas can be quite easily achieved at almost the same loop voltage. The plasma current in helium discharges is slightly lower than in the case of hydrogen. Turbulent fluctuations of the floating potential measured by means of an array of Langmuir probes reveal a noticeably different character in the two discharges.

  20. Hydrogen recovery from the thermal plasma gasification of solid waste.

    PubMed

    Byun, Youngchul; Cho, Moohyun; Chung, Jae Woo; Namkung, Won; Lee, Hyeon Don; Jang, Sung Duk; Kim, Young-Suk; Lee, Jin-Ho; Lee, Carg-Ro; Hwang, Soon-Mo

    2011-06-15

    Thermal plasma gasification has been demonstrated as one of the most effective and environmentally friendly methods for solid waste treatment and energy utilization in many of studies. Therefore, the thermal plasma process of solid waste gasification (paper mill waste, 1.2 ton/day) was applied for the recovery of high purity H(2) (>99.99%). Gases emitted from a gasification furnace equipped with a nontransferred thermal plasma torch were purified using a bag-filter and wet scrubber. Thereafter, the gases, which contained syngas (CO+H(2)), were introduced into a H(2) recovery system, consisting largely of a water gas shift (WGS) unit for the conversion of CO to H(2) and a pressure swing adsorption (PSA) unit for the separation and purification of H(2). It was successfully demonstrated that the thermal plasma process of solid waste gasification, combined with the WGS and PSA, produced high purity H(2) (20 N m(3)/h (400 H(2)-Nm(3)/PMW-ton), up to 99.99%) using a plasma torch with 1.6 MWh/PMW-ton of electricity. The results presented here suggest that the thermal plasma process of solid waste gasification for the production of high purity H(2) may provide a new approach as a future energy infrastructure based on H(2).

  1. Research progress on ionic plasmas generated in an intense hydrogen negative ion source

    SciTech Connect

    Takeiri, Y. Tsumori, K.; Nagaoka, K.; Kaneko, O.; Ikeda, K.; Nakano, H.; Kisaki, M.; Tokuzawa, T.; Osakabe, M.; Kondo, T.; Sato, M.; Shibuya, M.; Komada, S.; Sekiguchi, H.; Geng, S.

    2015-04-08

    Characteristics of ionic plasmas, observed in a high-density hydrogen negative ion source, are investigated with a multi-diagnostics system. The ionic plasma, which consists of hydrogen positive- and negative-ions with a significantly low-density of electrons, is generated in the ion extraction region, from which the negative ions are extracted through the plasma grid. The negative ion density, i.e., the ionic plasma density, as high as the order of 1×10{sup 17}m{sup −3}, is measured with cavity ring-down spectroscopy, while the electron density is lower than 1×10{sup 16}m{sup −3}, which is confirmed with millimeter-wave interferometer. Reduction of the negative ion density is observed at the negative ion extraction, and at that time the electron flow into the ionic plasma region is observed to conserve the charge neutrality. Distribution of the plasma potential is measured in the extraction region in the direction normal to the plasma grid surface with a Langmuir probe, and the results suggest that the sheath is formed at the plasma boundary to the plasma grid to which the bias voltage is applied. The beam extraction should drive the negative ion transport in the ionic plasma across the sheath formed on the extraction surface. Larger reduction of the negative ions at the beam extraction is observed in a region above the extraction aperture on the plasma grid, which is confirmed with 2D image measurement of the Hα emission and cavity ring-down spectroscopy. The electron distribution is also measured near the plasma grid surface. These various properties observed in the ionic plasma are discussed.

  2. Surface modification of optical materials with hydrogen plasma for fabrication of Bragg gratings.

    PubMed

    Salgaeva, Uliana O; Volyncev, Anatoliy B; Mendes, Sergio B

    2016-01-20

    We investigate the hydrogen plasma process as a route for creating Bragg gratings (BGs) on optoelectronic materials such as undoped lithium niobate (LiNbO(3)), proton-exchanged LiNbO(3), and soda-lime glass. Photopatterns (periodic modulations, Λ=323-2000  nm) were created on those substrates and the hydrogen plasma process was investigated for its ability to transfer the microstructures and the underlying mechanisms involved in this process. The diffraction efficiency and surface topology of the BG were characterized, as well as the optical properties of corresponding bulk materials undergoing the same plasma treatment. It is shown that the hydrogen plasma treatment changes the complex refractive index and modifies the surface topology with a volume expansion in the near-surface region, and both features are connected to the appearance of structural defects in the materials. The hydrogen plasma offers unique flexibility and advantages that can be explored for the fabrication of integrated photonic components.

  3. Effects of laser radiation field on energies of hydrogen atom in plasmas

    SciTech Connect

    Bahar, M. K.

    2015-09-15

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence of laser radiation field within the Ehlotzky approximation using the asymptotic iteration method. The MGECSC potential includes four different potential forms in consideration of different sets of the parameters in the potential. By applying laser field, the total interaction potential of hydrogen atom embedded in plasmas converts to double well-type potential. The plasma screening effects under the influence of laser field as well as confinement effects of laser field on hydrogen atom in Debye and quantum plasmas are investigated by solving the Schrödinger equation with the laser-dressed MGECSC potential. It is resulted that since applying a monochromatic laser field on hydrogen atom embedded in a Debye and quantum plasma causes to shift in the profile of the total interaction potential, the confinement effects of laser field on hydrogen atom in plasmas modeled by the MGECSC potential change localizations of energy states.

  4. Effects of laser radiation field on energies of hydrogen atom in plasmas

    NASA Astrophysics Data System (ADS)

    Bahar, M. K.

    2015-09-01

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence of laser radiation field within the Ehlotzky approximation using the asymptotic iteration method. The MGECSC potential includes four different potential forms in consideration of different sets of the parameters in the potential. By applying laser field, the total interaction potential of hydrogen atom embedded in plasmas converts to double well-type potential. The plasma screening effects under the influence of laser field as well as confinement effects of laser field on hydrogen atom in Debye and quantum plasmas are investigated by solving the Schrödinger equation with the laser-dressed MGECSC potential. It is resulted that since applying a monochromatic laser field on hydrogen atom embedded in a Debye and quantum plasma causes to shift in the profile of the total interaction potential, the confinement effects of laser field on hydrogen atom in plasmas modeled by the MGECSC potential change localizations of energy states.

  5. Reversed ageing of Fe3O4 nanoparticles by hydrogen plasma

    PubMed Central

    Schmitz-Antoniak, Carolin; Schmitz, Detlef; Warland, Anne; Svechkina, Nataliya; Salamon, Soma; Piamonteze, Cinthia; Wende, Heiko

    2016-01-01

    Magnetite (Fe3O4) nanoparticles suffer from severe ageing effects when exposed to air even when they are dispersed in a solvent limiting their applications. In this work, we show that this ageing can be fully reversed by a hydrogen plasma treatment. By x-ray absorption spectroscopy and its associated magnetic circular dichroism, the electronic structure and magnetic properties were studied before and after the plasma treatment and compared to results of freshly prepared magnetite nanoparticles. While aged magnetite nanoparticles exhibit a more γ-Fe2O3 like behaviour, the hydrogen plasma yields pure Fe3O4 nanoparticles. Monitoring the temperature dependence of the intra-atomic spin dipole contribution to the dichroic spectra gives evidence that the structural, electronic and magnetic properties of plasma treated magnetite nanoparticles can outperform the ones of the freshly prepared batch. PMID:26902789

  6. Combined effect of Debye plasma environment and external electric field on hydrogen atom

    SciTech Connect

    Paul, S.; Ho, Y. K.

    2010-08-15

    We consider weakly coupled plasmas, characterized by Debye-Huckel model potential, and an external electric field along z-axis. Due to plasma environment the energy levels of atom are shifted up, bound states are merged to continuum. For external electric field the excited energy levels also split up; degenerate energy eigenvalues become nondegenerate. In the presence of external electric field, energy levels are shifted up and down, except ground state. The ground state energy value is shifted only down. Therefore, it is very interesting to study the combined effect of plasmas and external electric field on a simple atom (hydrogen). To calculate the energy levels and the corresponding states, we expand the wave function in terms of linear combination of the basis functions. The basis is generated by hydrogenic wave functions. Here, we estimate various plasma surroundings and electric field strengths. We observe converged results for the basis size 45, with angular momentum states up to eight.

  7. Roles of a plasma grid in a negative hydrogen ion source

    SciTech Connect

    Bacal, M.; Sasao, M.; Wada, M.; McAdams, R.

    2015-04-08

    The plasma grid is electrically biased with respect to other parts of source chamber wall in both volume sources and sources seeded with alkali metals. The roles of the plasma grid in these two kinds of sources will be described. The main functions of the plasma grid in volume sources are: optimizing the extracted negative ion current, reducing the co-extracted electron current, controlling the axial plasma potential profile, recycling the hydrogen atoms to molecules, concentrating the negative ions near its surface and, when biased positive, depleting the electron population near its surface. These functions are maintained in the sources seeded with alkali metals. However an additional function appears in the Cs seeded sources, namely direct emission of negative ions under positive ion and neutral hydrogen bombardment.

  8. High rate dry etching of GaN, AlN and InN in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar plasmas

    SciTech Connect

    Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Shul, R.J.; Kilcoyne, S.P.; Crawford, M.H.; Howard, A.J.; Parmeter, J.E.

    1995-05-01

    Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

  9. Plasma reforming and partial oxidation of hydrocarbon fuel vapor to produce synthesis gas and/or hydrogen gas

    DOEpatents

    Kong, Peter C.; Detering, Brent A.

    2003-08-19

    Methods and systems for treating vapors from fuels such as gasoline or diesel fuel in an internal combustion engine, to form hydrogen gas or synthesis gas, which can then be burned in the engine to produce more power. Fuel vapor, or a mixture of fuel vapor and exhaust gas and/or air, is contacted with a plasma, to promote reforming reactions between the fuel vapor and exhaust gas to produce carbon monoxide and hydrogen gas, partial oxidation reactions between the fuel vapor and air to produce carbon monoxide and hydrogen gas, or direct hydrogen and carbon particle production from the fuel vapor. The plasma can be a thermal plasma or a non-thermal plasma. The plasma can be produced in a plasma generating device which can be preheated by contact with at least a portion of the hot exhaust gas stream, thereby decreasing the power requirements of the plasma generating device.

  10. Plasma Reforming And Partial Oxidation Of Hydrocarbon Fuel Vapor To Produce Synthesis Gas And/Or Hydrogen Gas

    DOEpatents

    Kong, Peter C.; Detering, Brent A.

    2004-10-19

    Methods and systems are disclosed for treating vapors from fuels such as gasoline or diesel fuel in an internal combustion engine, to form hydrogen gas or synthesis gas, which can then be burned in the engine to produce more power. Fuel vapor, or a mixture of fuel vapor and exhaust gas and/or air, is contacted with a plasma, to promote reforming reactions between the fuel vapor and exhaust gas to produce carbon monoxide and hydrogen gas, partial oxidation reactions between the fuel vapor and air to produce carbon monoxide and hydrogen gas, or direct hydrogen and carbon particle production from the fuel vapor. The plasma can be a thermal plasma or a non-thermal plasma. The plasma can be produced in a plasma generating device which can be preheated by contact with at least a portion of the hot exhaust gas stream, thereby decreasing the power requirements of the plasma generating device.

  11. Plasma density characterization at SPARC_LAB through Stark broadening of Hydrogen spectral lines

    NASA Astrophysics Data System (ADS)

    Filippi, F.; Anania, M. P.; Bellaveglia, M.; Biagioni, A.; Chiadroni, E.; Cianchi, A.; Di Giovenale, D.; Di Pirro, G.; Ferrario, M.; Mostacci, A.; Palumbo, L.; Pompili, R.; Shpakov, V.; Vaccarezza, C.; Villa, F.; Zigler, A.

    2016-09-01

    Plasma-based acceleration techniques are of great interest for future, compact accelerators due to their high accelerating gradient. Both particle-driven and laser-driven Plasma Wakefield Acceleration experiments are foreseen at the SPARC_LAB Test Facility (INFN National Laboratories of Frascati, Italy), with the aim to accelerate high-brightness electron beams. In order to optimize the efficiency of the acceleration in the plasma and preserve the quality of the accelerated beam, the knowledge of the plasma electron density is mandatory. The Stark broadening of the Hydrogen spectral lines is one of the candidates used to characterize plasma density. The implementation of this diagnostic for plasma-based experiments at SPARC_LAB is presented.

  12. Monitoring Surface Condition of Plasma Grid of a Negative Hydrogen Ion Source

    SciTech Connect

    Wada, M.; Kasuya, T.; Tokushige, S.; Kenmotsu, T.

    2011-09-26

    Surface condition of a plasma grid in a negative hydrogen ion source is controlled so as to maximize the beam current under a discharge operation with introducing Cs into the ion source. Photoelectric current induced by laser beams incident on the plasma grid can produce a signal to monitor the surface condition, but the signal detection can be easily hindered by plasma noise. Reduction in size of a detection electrode embedded in the plasma grid can improve signal-to-noise ratio of the photoelectric current from the electrode. To evaluate the feasibility of monitoring surface condition of a plasma gird by utilizing photoelectric effect, a small experimental setup capable of determining quantum yields of a surface in a cesiated plasma environment is being assembled. Some preliminary test results of the apparatus utilizing oxide cathodes are reported.

  13. Low energy, high power hydrogen neutral beam for plasma heating

    SciTech Connect

    Deichuli, P.; Davydenko, V.; Ivanov, A. Mishagin, V.; Sorokin, A.; Stupishin, N.; Korepanov, S.; Smirnov, A.

    2015-11-15

    A high power, relatively low energy neutral beam injector was developed to upgrade of the neutral beam system of the gas dynamic trap device and C2-U experiment. The ion source of the injector produces a proton beam with the particle energy of 15 keV, current of up to 175 A, and pulse duration of a few milliseconds. The plasma emitter of the ion source is produced by superimposing highly ionized plasma jets from an array of four arc-discharge plasma generators. A multipole magnetic field produced with permanent magnets at the periphery of the plasma box is used to increase the efficiency and improve the uniformity of the plasma emitter. Multi-slit grids with 48% transparency are fabricated from bronze plates, which are spherically shaped to provide geometrical beam focusing. The focal length of the Ion Optical System (IOS) is 3.5 m and the initial beam diameter is 34 cm. The IOS geometry and grid potentials were optimized numerically to ensure accurate beam formation. The measured angular divergences of the beam are ±0.01 rad parallel to the slits and ±0.03 rad in the transverse direction.

  14. Confinement effects of magnetic field on two-dimensional hydrogen atom in plasmas

    SciTech Connect

    Bahar, M. K.; Soylu, A.

    2015-05-15

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence and in the absence of an external magnetic field within two-dimensional formalism using the asymptotic iteration method. The MGECSC potential includes four different potential forms when considering different sets of the parameters in the potential. The plasma screening effects in the weak and strong magnetic field regimes as well as the confinement effects of magnetic field on the two-dimensional hydrogen atom in Debye and quantum plasmas are investigated by solving the corresponding equations. It is found that applying a uniform magnetic field on the hydrogen atom embedded in a plasma leads to change in the profile of the total interaction potential. Thus, confinement effects of magnetic field on hydrogen atom embedded in Debye and quantum plasmas modeled by a MGECSC potential lead to shift bound state energies. This effect would be important to isolate the plasma from the external environment in the experimental applications of plasma physics.

  15. Confinement effects of magnetic field on two-dimensional hydrogen atom in plasmas

    NASA Astrophysics Data System (ADS)

    Bahar, M. K.; Soylu, A.

    2015-05-01

    In this study, for the first time, the Schrödinger equation with more general exponential cosine screened Coulomb (MGECSC) potential is solved numerically in the presence and in the absence of an external magnetic field within two-dimensional formalism using the asymptotic iteration method. The MGECSC potential includes four different potential forms when considering different sets of the parameters in the potential. The plasma screening effects in the weak and strong magnetic field regimes as well as the confinement effects of magnetic field on the two-dimensional hydrogen atom in Debye and quantum plasmas are investigated by solving the corresponding equations. It is found that applying a uniform magnetic field on the hydrogen atom embedded in a plasma leads to change in the profile of the total interaction potential. Thus, confinement effects of magnetic field on hydrogen atom embedded in Debye and quantum plasmas modeled by a MGECSC potential lead to shift bound state energies. This effect would be important to isolate the plasma from the external environment in the experimental applications of plasma physics.

  16. Hydrogen production in a radio-frequency plasma source operating on water vapor

    NASA Astrophysics Data System (ADS)

    Nguyen, Son-Ca Viet Thi

    The global energy and climate challenges have motivated development of innovative techniques to satisfy energy demand while minimizing emissions. To this end, hydrogen as an alternative energy carrier in the transportation sector is an attractive option. In addition, there is already a great need for hydrogen gas in several industrial processes such as hydro-cracking of crude oil to produce gasoline and production of ammonia and methanol. The current dominant methods of hydrogen production from fossil fuels are well-developed and have reached relatively high energy efficiencies (up to 85%), but these methods rely on non-renewable natural resources and produce carbon dioxide emissions. This work investigates the feasibility of hydrogen production by dissociating water molecules in a radio-frequency (RF) plasma discharge. In addition to the widespread usage of hydrogen gas, applications of water plasma have permeated in many areas of research, and information on basic behaviors of a water plasma discharge will provide fruitful insights for other researchers. An RF plasma source equipped with a double-helix antenna (m = 1 mode) and an applied axial magnetic field is designed to operate on water vapor. It is shown that water molecules are being dissociated in the discharge. Experimental results show that the rate of hydrogen production increases linearly with RF power in the absence of the applied axial magnetic field. With the magnetic field, the rate of hydrogen production increases from 250 to 500 W, and begins to saturate with RF power. Despite this saturation, it is shown that hydrogen increases with magnetic field strength at a fixed RF power. Further, the rate of hydrogen production increases with water input flow rate up to 100 sccm for a fixed RF power level, and begins to decrease at 125 sccm. This dissertation characterizes the rate of hydrogen production and plasma properties as a function of RF power, applied B-field strength, and water input flow rate. A

  17. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions

    SciTech Connect

    Jeong, J. H.; Endoh, T.; Kim, Y.; Kim, W. K.; Park, S. O.

    2014-05-07

    To identify the degradation mechanism in magnetic tunnel junctions (MTJs) using hydrogen, the properties of the MTJs were measured by applying an additional hydrogen etch process and a hydrogen plasma process to the patterned MTJs. In these studies, an additional 50 s hydrogen etch process caused the magnetoresistance (MR) to decrease from 103% to 14.7% and the resistance (R) to increase from 6.5 kΩ to 39 kΩ. Moreover, an additional 500 s hydrogen plasma process decreased the MR from 103% to 74% and increased R from 6.5 kΩ to 13.9 kΩ. These results show that MTJs can be damaged by the hydrogen plasma process as well as by the hydrogen etch process, as the atomic bonds in MgO may break and react with the exposed hydrogen gas. Compounds such as MgO hydrate very easily. We also calculated the damaged layer width (DLW) of the patterned MTJs after the hydrogen etching and plasma processes, to evaluate the downscaling limitations of spin-transfer-torque magnetic random-access memory (STT-MRAM) devices. With these calculations, the maximum DLWs at each side of the MTJ, generated by the etching and plasma processes, were 23.8 nm and 12.8 nm, respectively. This result validates that the hydrogen-based MTJ patterning processes cannot be used exclusively in STT-MRAMs beyond 20 nm.

  18. Transition of single-walled carbon nanotubes from metallic to semiconducting in field-effect transistors by hydrogen plasma treatment.

    PubMed

    Zheng, Gang; Li, Qunqing; Jiang, Kaili; Zhang, Xiaobo; Chen, Jia; Ren, Zheng; Fan, Shoushan

    2007-06-01

    We report hydrogen plasma treatment results on converting the metallic single-walled carbon nanotubes to semiconducting single-walled carbon nanotubes. We found that the as-grown single-walled carbon nanotubes (SWNTs) can be sorted as three groups which behave as metallic, as-metallic, and semiconducting SWNTs. These three groups have different changes under hydrogen plasma treatment and successive annealing process. The SWNTs can be easily hydrogenated in the hydrogen plasma environment and the as-metallic SWNTs can be transformed to semiconducting SWNTs. The successive annealing process can break the C-H bond, so the conversion is reversible.

  19. On Asymmetry of Hydrogen Spectral Lines in Nonequlibrium Plasmas

    SciTech Connect

    Demura, A. V.; Demchenko, G. V.; Nikolic, D.

    2008-10-22

    The Standard Theory (ST) of hydrogen spectral lines Stark broadening is applied within many-body approach to detailed description of profile asymmetry simultaneously accounting for the quadrupole interaction, quadratic Stark effect shifts and corrections to oscillator strengths. The influence of electronic collision shifts and impact widths, trivial asymmetry, the Boltzmann and dipole intensity scaling factors are studied as well. The consistent inclusion of the latter two factors in ST frames requests the line contour redefinition to avoid divergence. It is demonstrated that the asymmetry of hydrogen spectral lines is the many-parametric sensitive function of broadening mechanisms. The comparison with the precision experiment on stabilized arc data for H{sub {beta}} line has shown good coincidence within assumption of nonequilibrium between electrons and heavy neutral particles.

  20. Full densification of inkjet-printed copper conductive tracks on a flexible substrate utilizing a hydrogen plasma sintering

    NASA Astrophysics Data System (ADS)

    Kwon, Young-Tae; Lee, Young-In; Kim, Seil; Lee, Kun-Jae; Choa, Yong-Ho

    2017-02-01

    Low temperature sintering techniques are crucial in developing flexible printed electronics. In this work, we demonstrate a novel hydrogen plasma sintering method that achieves a full reduction and densification of inkjet-printed patterns using a copper complex ion ink. After inkjet printing on polyethylene terephthalate (PET) substrates, both hydrogen plasma and conventional hydrogen thermal treatment were employed to compare the resulting microstructures, electrical properties and anti-oxidation behavior. The plasma treated pattern shows a fully densified microstructure with a resistivity of 3.23 μΩ cm, while the thermally treated pattern shows a relatively poor microstructure and high resistivity. In addition, the hydrogen plasma-treated copper pattern retains its electrical resistivity for one month without any significant decrease. This novel hydrogen plasma sintering technique could be used to produce conductive patterns with excellent electrical properties, allowing for highly reliable flexible printed electronics.

  1. Coal pyrolysis to acetylene using dc hydrogen plasma torch: effects of system variables on acetylene concentration

    NASA Astrophysics Data System (ADS)

    Chen, Longwei; Meng, Yuedong; Shen, Jie; Shu, Xingsheng; Fang, Shidong; Xiong, Xinyang

    2009-03-01

    In order to unveil the inner mechanisms that determine acetylene concentration, experimental studies on the effect of several parameters such as plasma torch power, hydrogen flux and coal flux were carried out from coal pyrolysis in a dc plasma torch. Xinjiang long flame coals including volatile constituents at a level of about 42% were used in the experiment. Under the following experimental conditions, namely plasma torch power, hydrogen flow rate and pulverized coal feed speed of 2.12 MW, 32 kg h-1 and 900 kg h-1, respectively, acetylene volume concentration of about 9.4% was achieved. The experimental results indicate that parameters such as plasma torch power and coal flux play important roles in the formation of acetylene. Acetylene concentration increases inconspicuously with hydrogen flux. A chemical thermodynamic equilibrium model using the free energy method is introduced in this paper to numerically simulate each experimental condition. The numerical results are qualitatively consistent with the experimental results. Two parameters, i.e. the gas temperature and the ratio of hydrogen/carbon, are considered to be the dominant and independent factors that determine acetylene concentration.

  2. Factors Affecting VUV Emission Spectrum near Lyman-{alpha} from a Hydrogen Plasma Source

    SciTech Connect

    Ogino, K.; Kasuya, T.; Shimamoto, S.; Wada, M.; Kimura, Y.; Nishiura, M.

    2011-09-26

    Vacuum ultra violet (VUV) emission spectra from plasmas near walls of different metallic materials were measured to estimate the effect upon the local production rate of vibrational excited hydrogen molecules due to plasma wall interaction. Among Cu, Mo, Ni, Ta and Ti, the intensity of band spectrum around Lyman-{alpha} had become the largest when Cu wall was used while it was the smallest for Ti. The role of particle reflection from the plasma electrode surface upon the H{sup -} production by a pure electron volume process is discussed.

  3. Atomic hydrogen and diatomic titanium-monoxide molecular spectroscopy in laser-induced plasma

    NASA Astrophysics Data System (ADS)

    Parigger, Christian G.; Woods, Alexander C.

    2017-03-01

    This article gives a brief review of experimental studies of hydrogen Balmer series emission spectra. Ongoing research aims to evaluate early plasma evolution following optical breakdown in laboratory air. Of interest is as well laser ablation of metallic titanium and characterization of plasma evolution. Emission of titanium monoxide is discussed together with modeling of diatomic spectra to infer temperature. The behavior of titanium particles in plasma draws research interests ranging from the modeling of stellar atmospheres to the enhancement of thin film production via pulsed laser deposition.

  4. Metal etching composition

    NASA Technical Reports Server (NTRS)

    Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

    1991-01-01

    The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

  5. Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF{sub 4} and O{sub 2}

    SciTech Connect

    Nabesawa, Hirofumi; Hiruma, Takaharu; Seki, Minoru; Hitobo, Takeshi; Wakabayashi, Suguru; Asaji, Toyohisa; Abe, Takashi

    2013-11-15

    In this study, we have proposed a low-pressure reactive ion etching of bulk polymer materials with a gas mixture of CF{sub 4} and O{sub 2}, and have achieved precise fabrication of poly(methyl methacrylate) (PMMA) and perfluoroalkoxy (PFA) bulk polymer plates with high-aspect-ratio and narrow gap array structures, such as, pillar, frustum, or cone, on a nano/micro scale. The effects of the etching conditions on the shape and size of each pillar were evaluated by changing etching duration and the size/material of etching mask. The fabricated PMMA array structures indicate possibilities of optical waveguide and nanofiber array. PFA cone array structures showed super-hydrophobicity without any chemical treatments. Also, polystyrene-coated silica spheres were used as an etching mask for the pillar array structure formation to control the gap between pillars.

  6. Plasma Outages in Pulsed, High-Power RF Hydrogen Ion Sources

    NASA Astrophysics Data System (ADS)

    Stockli, Martin; Han, Baoxi; Murray, Syd; Pennisi, Terry; Piller, Chip; Santana, Manuel; Welton, Robert

    2011-04-01

    Pulsed, high-power RF ion sources are needed to produce copious amounts of negative H-ions for high-power accelerators with charge-changing injection schemes. When increasing the RF power, the plasma inductance changes the RF resonance, which drifts away from the low-power resonance. When the RF circuit is tuned to maximize the (pulsed) plasma power, the (off-resonance) power at the beginning of the pulse is reduced. If the induced electric fields fall below the breakdown strength of the hydrogen gas, the plasma fails to develop. This can be avoided with a compromise tune and/or by increasing the inductance of the resonant circuit. However, the breakdown strength of the hydrogen gas increases with time due to the gradual decrease of the electron-rich plasma impurities, which causes plasma outages after weeks of reliable operation. In this paper we discuss the success of different mitigations that were tested and implemented to overcome this fundamental problem of pulsed, high-power RF hydrogen ion sources.

  7. Probe of hydrogen atom in plasmas with magnetic, electric, and Aharonov-Bohm flux fields

    NASA Astrophysics Data System (ADS)

    Bahar, M. K.; Soylu, A.

    2016-09-01

    In this study, for the first time, the combined effects of external magnetic, electric, and Aharonov-Bohm (AB) flux fields on quantum levels of the hydrogen atom embedded in Debye and quantum plasmas modeled by the more general exponential cosine screened Coulomb (MGECSC) potential are investigated within cylindrical coordinate formalism using the asymptotic iteration method. The MGECSC potential includes four different potential forms when considering different sets of the parameters in the potential. The corresponding Schrödinger equation is solved numerically in order to examine both strong and weak regimes and confinement effects of external fields. The influence of screening parameters of the MGECSC potential on quantum levels of the hydrogen atom is also studied in detail in the presence of external magnetic, electric, and AB flux fields. As it is possible to model both Debye and quantum plasmas by using screening parameters in the MGECSC potential, the effects of each plasma environment on quantum levels of the hydrogen atom are also considered in the external fields. It is observed that there are important results of external fields on the total interaction potential profile, and the most dominant one in these fields is the magnetic field. Furthermore, the effects of confinement on the physical state of the plasma environment is a subject of this study. These details would be important in experimental and theoretical investigations in plasma and atomic physics fields.

  8. Novel Composite Hydrogen-Permeable Membranes for Non-Thermal Plasma Reactors for the Decomposition of Hydrogen Sulfide

    SciTech Connect

    Morris D. Argyle; John F. Ackerman; Suresh Muknahallipatna; Jerry C. Hamann; Stanislaw Legowski; Guibling Zhao; Ji-Jun Zhang; Sanil John

    2005-10-01

    The goal of this experimental project is to design and fabricate a reactor and membrane test cell to dissociate hydrogen sulfide (H{sub 2}S) in a non-thermal plasma and recover hydrogen (H{sub 2}) through a superpermeable multi-layer membrane. Superpermeability of hydrogen atoms (H) has been reported by some researchers using membranes made of Group V transition metals (niobium, tantalum, vanadium, and their alloys), although it has yet to be confirmed in this study. A pulsed corona discharge (PCD) reactor has been fabricated and used to dissociate H{sub 2}S into hydrogen and sulfur. A nonthermal plasma cannot be produced in pure H{sub 2}S with our reactor geometry, even at discharge voltages of up to 30 kV, because of the high dielectric strength of pure H{sub 2}S ({approx}2.9 times higher than air). Therefore, H{sub 2}S was diluted in another gas with lower breakdown voltage (or dielectric strength). Breakdown voltages of H{sub 2}S in four balance gases (Ar, He, N{sub 2} and H{sub 2}) have been measured at different H{sub 2}S concentrations and pressures. Breakdown voltages are proportional to the partial pressure of H{sub 2}S and the balance gas. H{sub 2}S conversion and the reaction energy efficiency depend on the balance gas and H{sub 2}S inlet concentrations. With increasing H{sub 2}S concentrations, H{sub 2}S conversion initially increases, reaches a maximum, and then decreases. H{sub 2}S conversion in atomic balance gases, such as Ar and He, is more efficient than that in diatomic balance gases, such as N{sub 2} and H{sub 2}. These observations can be explained by the proposed reaction mechanism of H{sub 2}S dissociation in different balance gases. The results show that nonthermal plasmas are effective for dissociating H{sub 2}S into hydrogen and sulfur.

  9. Modification of Silicon Dioxide by Hydrogen and Deuterium Plasmas at Room Temperature

    NASA Astrophysics Data System (ADS)

    Kuroda, Tsukasa; Iwakuro, Hiroaki

    1993-09-01

    Silicon dioxides exposed to H2 and D2 plasmas have been investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. D2 plasma exposure at the self-bias voltage of 230 V results in reduction of Si on the SiO2 surface, but not in the H2 plasma exposure at the same self-bias voltage. This difference between the D2 and H2 plasma exposures is attributable to the larger momentum transfer effect of the deuterium ions. The hydrogen or deuterium atoms incorporated diffuse through the SiO2 film during the plasma exposure and pile up at the Si-SiO2 interface.

  10. Modification of silicon dioxide by hydrogen and deuterium plasmas at room temperature

    NASA Astrophysics Data System (ADS)

    Kuroda, Tsukasa; Iwakuro, Hiroaki

    1993-09-01

    Silicon dioxides exposed to H2 and D2 plasmas have been investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. D2 plasma exposure at the self-bias voltage of 230 V results in reduction of Si on the SiO2 surface, but not in the H2 plasma exposure at the same self-bias voltage. This difference between the D2 and H2 plasma exposures is attributable to the larger momentum transfer effect of the deuterium ions. The hydrogen or deuterium atoms incorporated diffuse through the SiO2 film during the plasma exposure and pile up at the Si-SiO2 interface.

  11. Higher-order contributions to transport coefficients in two-temperature hydrogen thermal plasma

    SciTech Connect

    Sharma, Rohit; Singh, Gurpreet; Singh, Kuldip

    2011-06-15

    Within the framework of Chapman-Enskog method, electron transport properties and their higher-order contributions have been studied in temperature range 5000-40 000 K at different pressures for hydrogen thermal plasma in local thermodynamic equilibrium (LTE) and non-local thermodynamic equilibrium (NLTE) regimes. Two cases of thermal plasma have been considered: (i) Ground state (GS) plasma in which all atomic hydrogen has been assumed to be in ground state and (ii) the excited state (ES) plasma in which hydrogen atoms are distributed in various possible electronically excited states (EES). The plasma composition is calculated by modified Saha equation of van de Sanden et al. The influence of non-equilibrium parameter {theta} (=T{sub e}/T{sub h}) on these properties has been examined in both the cases. It has been observed that both EES and {theta} modify the plasma composition and consequently affect the electron transport properties (viz., electron thermal conductivity, electrical conductivity, thermal diffusion and thermal diffusion ratio). It is shown that non-equilibrium parameter {theta} has meager effect on the higher-order convergence in comparison to EES. The unique behaviour observed for third-order contribution to these transport properties in GS plasma for small values of {theta} could be explained only when EES are taken into account. It is noted that EES show their influence on higher-orders to a considerable extent even when e-H(n) cross-sections are replaced by the ground state ones. Thus electron transport coefficients and their higher-order contributions are affected significantly due to inclusion of EES in LTE and NLTE plasmas.

  12. Coherent and incoherent Thomson scattering on an argon/hydrogen microwave plasma torch with transient behaviour

    NASA Astrophysics Data System (ADS)

    Obrusník, A.; Synek, P.; Hübner, S.; van der Mullen, J. J. A. M.; Zajíčková, L.; Nijdam, S.

    2016-10-01

    A new method of processing time-integrated coherent Thomson scattering spectra is presented, which provides not only the electron density and temperature but also information about the transient behaviour of the plasma. Therefore, it is an alternative to single-shot Thomson scattering measurements as long as the scattering is coherent. The method is applied to a microwave plasma torch operating in argon or a mixture of argon with hydrogen at atmospheric pressure. Electron densities up to 8\\cdot {{10}21} m-3 (ionization degree above 10-3) were observed, which is more than two times higher than presented in earlier works on comparable discharges. Additionally, a parametric study with respect to the argon/hydrogen ratio and the input power was carried out and the results are discussed together with earlier Stark broadening measurements on the same plasma.

  13. Hydrogen uptake in single-walled carbon nanotubes synthesized by the hydrogen arc plasma jet method.

    NASA Astrophysics Data System (ADS)

    Moreno-Ruiz, L. A.; Ortiz-Lopez, J.; de Ita de La Torre, A.; Arellano-Peraza, J. S.; Flores-Díaz, G.

    2006-03-01

    Carbon nanotubes were synthesized by a modified electric arc discharge method under hydrogen atmosphere using a catalytic mixture of powders with composition C/Ni/Co/Fe/FeS. The samples were characterized with transmission and scanning electron microscopy, Raman spectroscopy and thermo-gravimetric analysis. Unpurified samples contain 20 wt% of carbon nanotubes, 2 wt% of other forms of carbon and 78 wt% of catalytic metals. Adsorption/desorption of hydrogen in unpurified samples at atmospheric pressure measured with gravimetric methods was of the order of 2 wt%. Samples for these measurements were prepared with a three-step treatment: (i) oxidation in air for 30 min at 500 ^oC, (ii) ball- milling for 1 hr, and (iii) second oxidation in air for 30 min at 500 ^oC. This treatment was applied to eliminate other forms of carbon as well as to shorten the tubes and open their caps. Hydrogen desorption was also measured in degassed samples (400 ^oC for 20 min in vacuum) which adsorbed H2 while cooling to room temperature. Desorption in degassed/hydrogenated samples is a two-step process which we attribute to distinct desorption characteristics of nanotubes and of residual oxidized metal catalysts.

  14. Simulation of Etching Profiles Using Level Sets

    NASA Technical Reports Server (NTRS)

    Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    1998-01-01

    Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

  15. Bactericidal effect of plasma jet with helium flowing through 3% hydrogen peroxide against Enterococcus faecalis

    PubMed Central

    Zhou, Xin-Cai; Li, Yu-Lan; Liu, De-Xi; Cao, Ying-Guang; Lu, Xin-Pei

    2016-01-01

    The aim of the present study was to assess the antimicrobial activity of plasma jet with helium (He) flowing through 3% hydrogen peroxide in root canals infected with Enterococcus faecalis. A total of 42 single-rooted anterior teeth were prepared, sterilized, inoculated with an E. faecalis suspension and incubated for 7 days. Next, the teeth were randomly divided into six experimental groups (including groups treated by plasma jet with or without He for different time durations) and one control group treated without plasma. The number of surviving bacteria in each canal was determined by counting the colony forming units (CFU)/ml on nutrient agar plates. The results indicated that statistically significant reduction in CFU/ml (P<0.005) existed for all treatment groups relative to the control group. The greatest reductions in CFU/ml were observed for Group 3 (7.027 log unit reduction) and Group 2 (6.237 log unit reduction), which were treated by plasma jet sterilization with He flowing through 3% hydrogen peroxide for 4 min or for 2 min, respectively. In addition, the reduction in Group 3 was significantly greater compared with that in Group 2 or in the groups treated by plasma jet sterilization without He flowing through 3% hydrogen peroxide for 1, 2 or 4 min. In conclusion, plasma jet with or without He flowing through 3% hydrogen peroxide can effectively sterilized root canals infected with E. faecalis and should be considered as an alternative method for root canal disinfection in endodontic treatments. PMID:27882119

  16. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma.

    PubMed

    Ito, Hiroshi; Kuwahara, Takuya; Kawaguchi, Kentaro; Higuchi, Yuji; Ozawa, Nobuki; Kubo, Momoji

    2016-03-21

    We used our etching simulator [H. Ito et al., J. Phys. Chem. C, 2014, 118, 21580-21588] based on tight-binding quantum chemical molecular dynamics (TB-QCMD) to elucidate SiC etching mechanisms. First, the SiC surface is irradiated with SF5 radicals, which are the dominant etchant species in experiments, with the irradiation energy of 300 eV. After SF5 radicals bombard the SiC surface, Si-C bonds dissociate, generating Si-F, C-F, Si-S, and C-S bonds. Then, etching products, such as SiS, CS, SiFx, and CFx (x = 1-4) molecules, are generated and evaporated. In particular, SiFx is the main generated species, and Si atoms are more likely to vaporize than C atoms. The remaining C atoms on SiC generate C-C bonds that may decrease the etching rate. Interestingly, far fewer Si-Si bonds than C-C bonds are generated. We also simulated SiC etching with SF3 radicals. Although the chemical reaction dynamics are similar to etching with SF5 radicals, the etching rate is lower. Next, to clarify the effect of O atom addition on the etching mechanism, we also simulated SiC etching with SF5 and O radicals/atoms. After bombardment with SF5 radicals, Si-C bonds dissociate in a similar way to the etching without O atoms. In addition, O atoms generate many C-O bonds and COy (y = 1-2) molecules, inhibiting the generation of C-C bonds. This indicates that O atom addition improves the removal of C atoms from SiC. However, for a high O concentration, many C-C and Si-Si bonds are generated. When the O atoms dissociate the Si-C bonds and generate dangling bonds, the O atoms terminate only one or two dangling bonds. Moreover, at high O concentrations there are fewer S and F atoms to terminate the dangling bonds than at low O concentration. Therefore, few dangling bonds of dissociated Si and C atoms are terminated, and they form many Si-Si and C-C bonds. Furthermore, we propose that the optimal O concentration is 50-60% because both Si and C atoms generate many etching products producing fewer C

  17. Dry etching technologies for reflective multilayer

    NASA Astrophysics Data System (ADS)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  18. Helium-3 Generation from the Interaction of Deuterium Plasma inside a Hydrogenated Lattice: Red Fusion

    NASA Astrophysics Data System (ADS)

    Leal-Quiros, Edbertho; Leal-Escalante, David A.

    2015-03-01

    Helium-3 has been created in a nuclear fusion reaction by fusing deuterium ions from deuterium plasma with hydrogen ions in a “RED” (the Spanish word for net) or crystal lattice, a method we called red fusion ("Fusion en la red cristalina"), because is a new method to make nuclear fusion reaction. In this paper, it will be show the experimental results where the helium-3 has been generated for the first time in this kind of new method to confine deuterium and hydrogen inside the RED or lattice of the hydrogenated crystal and that confinement inside the RED facilitated overcoming the Coulomb barrier between them and helium-3 and phonons are produced in this fusion reaction. The results of a long time research in which helium-3, has been created in a fusion reaction inside the lattice or RED of the crystal that contained hydrogen after adequate interaction of deuterium plasma at appropriate high temperature and magnetic confinement of the Mirror/Cusp Plasma Machine at Polytechnic University of Puerto Rico, designed by the authors. Several mass spectra and visible light spectrum where the presence of helium-3 was detected are shown. The experiment was repeated more than 200 times showing always the generation of helium-3. In this experiment no gamma rays were detected. For this experiment several diagnostic instruments were used. The data collection with these control instrumentation are shown. Thus, it is an important new way to generate Helium-3. reserved.

  19. Recent Advances on Hydrogenic Retention in ITER's Plasma-Facing Materials: BE, C, W.

    SciTech Connect

    Skinner, C H; Alimov, Kh; Bekris, N; Causey, R A; Clark, R.E.H.; Coad, J P; Davis, J W; Doerner, R P; Mayer, M; Pisarev, A; Roth, J

    2008-03-29

    Management of tritium inventory remains one of the grand challenges in the development of fusion energy and the choice of plasma-facing materials is a key factor for in-vessel tritium retention. The Atomic and Molecular Data Unit of the International Atomic Energy Agency organized a Coordinated Research Project (CRP) on the overall topic of tritium inventory in fusion reactors during the period 2001-2006. This dealt with hydrogenic retention in ITER's plasma-facing materials, Be, C, W, and in compounds (mixed materials) of these elements as well as tritium removal techniques. The results of the CRP are summarized in this article together with recommendations for ITER. Basic parameters of diffusivity, solubility and trapping in Be, C and W are reviewed. For Be, the development of open porosity can account for transient hydrogenic pumping but long term retention will be dominated by codeposition. Codeposition is also the dominant retention mechanism for carbon and remains a serious concern for both Be and C containing layers. Hydrogenic trapping in unirradiated tungsten is low but will increase with ion and neutron damage. Mixed materials will be formed in a tokamak and these can also retain significant amounts of hydrogen isotopes. Oxidative and photon-based techniques for detritiation of plasma-facing components are described.

  20. Uncertainty propagation in modeling of plasma-assisted hydrogen production from biogas

    NASA Astrophysics Data System (ADS)

    Zaherisarabi, Shadi; Venkattraman, Ayyaswamy

    2016-10-01

    With the growing concern of global warming and the resulting emphasis on decreasing greenhouse gas emissions, there is an ever-increasing need to utilize energy-production strategies that can decrease the burning of fossil fuels. In this context, hydrogen remains an attractive clean-energy fuel that can be oxidized to produce water as a by-product. In spite of being an abundant species, hydrogen is seldom found in a form that is directly usable for energy-production. While steam reforming of methane is one popular technique for hydrogen production, plasma-assisted conversion of biogas (carbon dioxide + methane) to hydrogen is an attractive alternative. Apart from producing hydrogen, the other advantage of using biogas as raw material is the fact that two potent greenhouse gases are consumed. In this regard, modeling is an important tool to understand and optimize plasma-assisted conversion of biogas. The primary goal of this work is to perform a comprehensive statistical study that quantifies the influence of uncertain rate constants thereby determining the key reaction pathways. A 0-D chemical kinetics solver in the OpenFOAM suite is used to perform a series of simulations to propagate the uncertainty in rate constants and the resulting mean and standard deviation of outcomes.

  1. Excited-state positronium formation in positron-hydrogen collisions under weakly coupled plasmas

    NASA Astrophysics Data System (ADS)

    Rej, Pramit; Ghoshal, Arijit

    2016-06-01

    The effect of screening of weakly coupled plasma on positronium (Ps) formation in excited states in the scattering of a positron from the ground state of a hydrogen atom has been investigated using a distorted wave theory which includes screened dipole polarization potential. The effect of external plasma has been incorporated by using the Debye-Hückel screening model of the interacting charge particles. Variationally determined simple hydrogenic wave functions have been used to obtain the distorted wave scattering amplitude in a closed form. Effects of plasma screening on the differential and total cross sections have been studied in detail in the energy range 20-300 eV of incident positron. For the free atomic case, our results agree nicely with some of the most accurate results available in the literature. To the best of our knowledge, such a study on the differential and total cross sections for Ps formation in highly excited states in positron-hydrogen collisions under weakly coupled plasma is reported first time in the literature.

  2. An argon-nitrogen-hydrogen mixed-gas plasma as a robust ionization source for inductively coupled plasma mass spectrometry

    NASA Astrophysics Data System (ADS)

    Makonnen, Yoseif; Beauchemin, Diane

    2014-09-01

    Multivariate optimization of an argon-nitrogen-hydrogen mixed-gas plasma for minimum matrix effects, while maintaining analyte sensitivity as much as possible, was carried out in inductively coupled plasma mass spectrometry. In the presence of 0.1 M Na, the 33.9 ± 3.9% (n = 13 elements) analyte signal suppression on average observed in an all-argon plasma was alleviated with the optimized mixed-gas plasma, the average being - 4.0 ± 8.8%, with enhancement in several cases. An addition of 2.3% v/v N2 in the outer plasma gas, and 0.50% v/v H2 to the central channel, as a sheath around the nebulizer gas flow, was sufficient for this drastic increase in robustness. It also reduced the background from ArO+ and Ar2+ as well as oxide levels by over an order of magnitude. On the other hand, the background from NO+ and ArN+ increased by up to an order of magnitude while the levels of doubly-charged ions increased to 7% (versus 2.7% in an argon plasma optimized for sensitivity). Furthermore, detection limits were generally degraded by 5 to 15 fold when using the mixed-gas plasma versus the argon plasma for matrix-free solution (although they were better for several elements in 0.1 M Na). Nonetheless, the drastically increased robustness allowed the direct quantitative multielement analysis of certified ore reference materials, as well as the determination of Mo and Cd in seawater, without using any matrix-matching or internal standardization.

  3. Mechanisms of Hydrocarbon Based Polymer Etch

    NASA Astrophysics Data System (ADS)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  4. Suppression of hydrogenated carbon film deposition and hydrogen isotope retention by nitrogen addition into cold remote H/D and CH4 mixture plasmas

    NASA Astrophysics Data System (ADS)

    Iida, K.; Notani, M.; Uesugi, Y.; Tanaka, Y.; Ishijima, T.

    2015-08-01

    Control of tritium retention and its removal from the first wall of future fusion devices are one of the most crucial issues for safety and effective use for fuel. Nitrogen addition into remote edge plasmas has been considered and tested as an effective method for suppression of carbon film deposition and reduction of hydrogen isotope absorption in the deposited films. In this paper we have investigated the scavenger effects of nitrogen injected into low temperature D2/CH4 plasmas on hydrogenated carbon film growth using a small helical device. The result of the deposition shows that the key reactive particles with CN and ND(H) bonds to suppression of hydrogenated carbon film growth and hydrogen isotope absorption are much slowly generated compared with hydrocarbon particles such as CD(H)x and C2D(H)x. This may be due to the slow atomic nitrogen diffusion into hydrogenated carbon layer and the chemical equilibrium between nitrogen absorption.

  5. Charge exchange and ionization in hydrogen atom-fully stripped ion collisions in Debye plasmas

    SciTech Connect

    Zhang, H.; Wang, J. G.; He, B.; Qiu, Y. B.; Janev, R. K.

    2007-05-15

    The processes of charge exchange and ionization in collisions of ground state hydrogen atom with fully stripped ions in a weakly coupled plasma are studied by the classical trajectory Monte Carlo method in the collision energy range 10-900 keV/amu. The interparticle interactions are described by the Debye-Hueckel model with inclusion of dynamical effects associated with the projectile velocity. The microcanonical distribution of initial state electronic coordinates and momenta has been determined by inclusion of plasma screening effects. The cross section dependencies on plasma parameters and ion charge and velocity are investigated. It is shown that plasma effects on charge exchange and ionization cross sections are significant and particularly pronounced at low collision velocities. The results of systematic cross section calculations for different values of Debye screening length (in the range 1-50a{sub 0}) and ion charges (in the range 1-14) are presented.

  6. Precise energy eigenvalues of hydrogen-like ion moving in quantum plasmas

    SciTech Connect

    Dutta, S.; Saha, Jayanta K.; Mukherjee, T. K.

    2015-06-15

    The analytic form of the electrostatic potential felt by a slowly moving test charge in quantum plasma is developed. It has been shown that the electrostatic potential is composed of two parts: the Debye-Huckel screening term and the near-field wake potential. The latter depends on the velocity of the test charge as well as on the number density of the plasma electrons. Rayleigh-Ritz variational calculation has been done to estimate precise energy eigenvalues of hydrogen-like carbon ion under such plasma environment. A detailed analysis shows that the energy levels gradually move to the continuum with increasing plasma electron density while the level crossing phenomenon has been observed with the variation of ion velocity.

  7. Correlations between density distributions, optical spectra, and ion species in a hydrogen plasma (invited).

    PubMed

    Cortázar, O D; Megía-Macías, A; Tarvainen, O; Kalvas, T; Koivisto, H

    2016-02-01

    An experimental study of plasma distributions in a 2.45 GHz hydrogen discharge operated at 100 Hz repetition rate is presented. Ultrafast photography, time integrated visible light emission spectra, time resolved Balmer-alpha emission, time resolved Fulcher Band emission, ion species mass spectra, and time resolved ion species fraction measurements have been implemented as diagnostic tools in a broad range of plasma conditions. Results of plasma distributions and optical emissions correlated with H(+), H2(+), and H3(+) ion currents by using a Wien filter system with optical observation capability are reported. The magnetic field distribution and strength is found as the most critical factor for transitions between different plasma patterns and ion populations.

  8. Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl{sup +} and Br{sup +} ion incidence in the presence of Cl and Br neutrals

    SciTech Connect

    Nakazaki, Nobuya Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

    2015-12-21

    Classical molecular dynamics (MD) simulations have been performed for Cl{sup +} and Br{sup +} ions incident on Si(100) surfaces with Cl and Br neutrals, respectively, to gain a better understanding of the ion-enhanced surface reaction kinetics during Si etching in Cl- and Br-based plasmas. The ions were incident normally on surfaces with translational energies in the range E{sub i} = 20–500 eV, and low-energy neutrals of E{sub n} = 0.01 eV were also incident normally thereon with the neutral-to-ion flux ratio in the range Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 0–100, where an improved Stillinger--Weber potential form was employed for the interatomic potential concerned. The etch yields and thresholds presently simulated were in agreement with the experimental results previously reported for Si etching in Cl{sub 2} and Br{sub 2} plasmas as well as in Cl{sup +}, Cl{sub 2}{sup +}, and Br{sup +} beams, and the product stoichiometry simulated was consistent with that observed during Ar{sup +} beam incidence on Si in Cl{sub 2}. Moreover, the surface coverage of halogen atoms, halogenated layer thickness, surface stoichiometry, and depth profile of surface products simulated for Γ{sub n}{sup 0}/Γ{sub i}{sup 0} = 100 were in excellent agreement with the observations depending on E{sub i} reported for Si etching in Cl{sub 2} plasmas. The MD also indicated that the yield, coverage, and surface layer thickness are smaller in Si/Br than in Si/Cl system, while the percentage of higher halogenated species in product and surface stoichiometries is larger in Si/Br. The MD further indicated that in both systems, the translational energy distributions of products and halogen adsorbates desorbed from surfaces are approximated by two Maxwellians of temperature T{sub 1} ≈ 2500 K and T{sub 2} ≈ 7000–40 000 K. These energy distributions are discussed in terms of the desorption or evaporation from hot spots formed through chemically enhanced physical

  9. Production of hydrogen-rich gas from methane by thermal plasma reform.

    PubMed

    Chun, Young N; Kim, Seong C

    2007-12-01

    This study investigated the reforming characteristics and optimum operating condition of the high-temperature plasma torch (so called plasmatron) for hydrogen-rich gas (syngas) production. At the optimum condition, the composition of produced syngas was 45.4% hydrogen (H2), 6.9% carbon monoxide (CO), 1.5% carbon dioxide (CO2), and 1.1% acetylene (C2H2). The H2/CO ratio was 6.6, hydrogen yield was 78.8%, and the energy conversion rate was 63.6%. To obtain the optimum operating condition, parametric studies were carried out examining the effects of O2/CH4 ratio, steam/CH4 ratio, and Ni catalyst addition in reactor. When the steam/CH4 ratio was 1.23, the production of hydrogen was maximized and the methane conversion rate was 99.7%. The syngas composition was determined to be 50.4% H2, 5.7% CO, 13.8% CO2, and 1.1% C2H2. The H2/CO ratio was 9.7, hydrogen yield was 93.7%, and the energy conversion rate was 78.8%. Hydrogen production with catalyst was effective, compared with no catalyst.

  10. Impurity shielding criteria for steady state hydrogen plasmas in the LHD, a heliotron-type device

    NASA Astrophysics Data System (ADS)

    Nakamura, Y.; Kobayashi, M.; Yoshimura, S.; Tamura, N.; Yoshinuma, M.; Tanaka, K.; Suzuki, C.; Peterson, B. J.; Sakamoto, R.; Morisaki, T.; the LHD Experiment Group

    2014-07-01

    Impurity behavior has so far been investigated in steady state hydrogen plasmas in the Large Helical Device, which is a heliotron-type device and excellent for steady state operation. There was always found to be an impurity accumulation window, as observed before (Nakamura et al 2002 Plasma Phys. Control. Fusion 44 2121, Nakamura et al 2003 Nucl. Fusion 43 219). To clarify the boundary conditions, the dependences of impurity transport on edge plasma parameters are investigated with a database of steady state hydrogen discharges, and the boundary conditions for the impurity accumulation window are discussed. It is found that two different types of impurity screening effects are essential for preventing intrinsic impurities from entering the core plasma. One of them is due to positive radial electric field at the plasma edge on the low collisionality side and the other is impurity retention caused by friction force in the ergodic layer on the high collisionality side. The classification of steady state discharges on n-T space shows that the impurity behavior can be predicted by the impurity shielding criteria based on each empirical scaling.

  11. Plasma-deposited amorphous hydrogenated carbon films and their tribological properties

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Pouch, John J.; Alterovitz, Samuel A.

    1989-01-01

    Recent work on the properties of diamondlike carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H ) films exhibiting more diamondlike behavior to more graphitic behavior. The plasma-deposited a-C:H can be effectively used as hard, wear-resistant, and protective lubricating films on ceramic materials such as Si(sub 3)N(sub 4) under a variety of environmental conditions such as moist air, dry nitrogrn, and vacuum.

  12. Interaction of impurity ions with a weakly non-Maxwellian simple hydrogenic plasma

    NASA Astrophysics Data System (ADS)

    Terry, William K.

    1990-08-01

    The average acceleration of an ensemble of ``test particles'' in a plasma is called the ``dynamical friction''; the average rate at which their velocity vectors spread out in velocity space is expressed in a velocity-space diffusion-rate tensor. These quantities have been derived for impurity ions interacting with a weakly non-Maxwellian simple hydrogenic plasma. The derivation is sketched briefly in this Brief Communication; for details, the reader is referred to a supplementary report (see NTIS Document No. DE88017137).

  13. Hydrogen plasma tests of some insulating coating systems for the nuclear rocket thrust chamber

    NASA Technical Reports Server (NTRS)

    Current, A. N.; Grisaffe, S. J.; Wycoff, K. C.

    1972-01-01

    Several plasma-sprayed and slurry-coated insulating coating systems were evaluated for structural stability in a low-pressure hot hydrogen environment at a maximum heat flux of 19.6 million watts/sq meter. The heat was provided by an electric-arc plasma generator. The coating systems consisted of a number of thin layers of metal oxides and/or metals. The materials included molybdenum, nichrome, tungsten, alumina, zirconia, and chromia. The study indicates potential usefulness in this environment for some coatings, and points up the need for improved coating application techniques.

  14. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    SciTech Connect

    Luo, J.; Li, L. H. E-mail: paul.chu@cityu.edu.hk; Liu, H. T.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Yu, K. M.; Fu, Ricky K. Y.; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk

    2014-06-15

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  15. Cluster virial expansion of the equation of state for hydrogen plasma with e -H2 contributions

    NASA Astrophysics Data System (ADS)

    Omarbakiyeva, Y. A.; Reinholz, H.; Röpke, G.

    2015-04-01

    The equation of state of partially ionized hydrogen plasma is considered with special focus on the contribution of the e -H2 interaction. Traditional semiempirical concepts such as the excluded volume are improved using microscopic approaches to treat the e -H2 problem. Within a cluster virial expansion, the Beth-Uhlenbeck formula is applied to infer the contribution of bound and scattering states to the temperature-dependent second virial coefficient. The scattering states are calculated using the phase expansion method for the polarization interaction that incorporates experimental data for the e -H2 scattering cross section. We present results for the scattering phase shifts, differential scattering cross sections, and the second virial coefficient due to the e -H2 interaction. The influence of this interaction on the composition of the partially ionized hydrogen plasma is confined to the parameter range where both the H2 and the free-electron components are abundant.

  16. A nonequilibrium model for a moderate pressure hydrogen microwave discharge plasma

    NASA Technical Reports Server (NTRS)

    Scott, Carl D.

    1993-01-01

    This document describes a simple nonequilibrium energy exchange and chemical reaction model to be used in a computational fluid dynamics calculation for a hydrogen plasma excited by microwaves. The model takes into account the exchange between the electrons and excited states of molecular and atomic hydrogen. Specifically, electron-translation, electron-vibration, translation-vibration, ionization, and dissociation are included. The model assumes three temperatures, translational/rotational, vibrational, and electron, each describing a Boltzmann distribution for its respective energy mode. The energy from the microwave source is coupled to the energy equation via a source term that depends on an effective electric field which must be calculated outside the present model. This electric field must be found by coupling the results of the fluid dynamics and kinetics solution with a solution to Maxwell's equations that includes the effects of the plasma permittivity. The solution to Maxwell's equations is not within the scope of this present paper.

  17. Novel Composite Hydrogen-Permeable Membranes for Non-Thermal Plasma Reactors for the Decomposition of Hydrogen Sulfide

    SciTech Connect

    Morris D. Argyle; John F. Ackerman; Suresh Muknahallipatna; Jerry C. Hamann; Stanislaw Legowski; Guibing Zhao; Sanil John

    2006-09-30

    The goal of this experimental project is to design and fabricate a reactor and membrane test cell to dissociate hydrogen sulfide (H{sub 2}S) in a non-thermal plasma and recover hydrogen (H{sub 2}) through a superpermeable multi-layer membrane. Superpermeability of hydrogen atoms (H) has been reported by some researchers using membranes made of Group V transition metals (niobium, tantalum, vanadium, and their alloys), although it has yet to be confirmed in this study. Several pulsed corona discharge (PCD) reactors have been fabricated and used to dissociate H{sub 2}S into hydrogen and sulfur. Visual observation shows that the corona is not uniform throughout the reactor. The corona is stronger near the top of the reactor in argon, while nitrogen and mixtures of argon or nitrogen with H{sub 2}S produce stronger coronas near the bottom of the reactor. Both of these effects appear to be explainable base on the different electron collision interactions with monatomic versus polyatomic gases. A series of experiments varying reactor operating parameters, including discharge capacitance, pulse frequency, and discharge voltage were performed while maintaining constant power input to the reactor. At constant reactor power input, low capacitance, high pulse frequency, and high voltage operation appear to provide the highest conversion and the highest energy efficiency for H{sub 2}S decomposition. Reaction rates and energy efficiency per H{sub 2}S molecule increase with increasing flow rate, although overall H{sub 2}S conversion decreases at constant power input. Voltage and current waveform analysis is ongoing to determine the fundamental operating characteristics of the reactors. A metal infiltrated porous ceramic membrane was prepared using vanadium as the metal and an alumina tube. Experiments with this type of membrane are continuing, but the results thus far have been consistent with those obtained in previous project years: plasma driven permeation or superpermeability

  18. Role of Grain Boundaries in the Mechanism of Plasma Hydrogenation of Nanocrystalline MgAl Films

    SciTech Connect

    Milcius, Darius; Pranevicius, Liudas; Templier, Claude; Bobrovaite, Birute; Barnackas, Irmantas

    2006-05-24

    Nanocrystalline aluminum hydrides (alanates) are potential hydrogen storage materials for PEM fuel cell applications. One of candidates is magnesium alanate, Mg(AlH4)2, which contains 9.3 wt. % of hydrogen. In the present work, the effects of Ti catalyst in improving the kinetics of hydrogen uptake and release are investigated. The 2-5 {mu}m thick MgAl films have been hydrogenated employing plasma immersion ion implantation technique as a function of Ti-content. Nanocrystalline MgAl films were prepared by magnetron sputter deposition in vacuum. Titanium atoms were incorporated simultaneously into the growing film. Morphological and structural properties were studied by scanning electron and atomic force microcopies and X-ray diffraction technique. It is shown that the microstructure of the hydrided/dehydrided MgAl film is highly defected and demonstrates dispersed/amorphous cluster-like structure. Ti atoms in MgAl film kinetically enhance the dehydrogenation of magnesium alanate film. For Ti-doped MgAl film the dehydrogenation process becomes about 1.5 times shorter and the dehydrogenation temperature about 50 K less than for Ti-undoped film for the temperature rise rate equal to 18 K-min-1. It is shown when hydrogenated MgAl film is exposed to air a compact amorphous Al2O3 layer with typically 3-5 nm thickness grows on the surface. Thin native oxide acts as a permeation barrier for hydrogen. It has been found that the major part of hydrogen effuses at {approx}630 K and the effusion process is controlled by the migration of hydrogen through the surface oxide layer.

  19. Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0 0 0 1) surface and the initial growth of GaN and AlN

    NASA Astrophysics Data System (ADS)

    Hartman, J. D.; Naniwae, K.; Petrich, C.; Nemanich, R. J.; Davis, R. F.

    2005-04-01

    Photo-emission electron microscopy (PEEM) and atomic force microscopy (AFM) have been used to characterize the surfaces of hydrogen etched 6H-SiC(0 0 0 1) wafers and the microstructure of the initial stages of growth of GaN and AlN on these surfaces via molecular beam epitaxy. The PEEM images were obtained using a free electron laser as the photon source. A stepped structure was evident in these images of the surfaces etched at 1600-1700 °C for 15 min. Comparison with the AFM images revealed that emission was occurring from the intersection of the steps and the terraces. Images of the initial stages of deposition of the GaN thin films at 700 and 800 °C revealed three-dimensional island growth. The degree of coalescence of these films was dependent upon the step structure: regions containing steps having unit cell height exhibited complete or nearly complete coalescence; regions containing steps with half unit cell height showed voids in the films parallel to the steps. PEEM of the initial stages of growth of AlN revealed immediate nucleation and rapid coalescence during deposition at 900 °C, except in areas on the substrate surface containing steps having half unit cell height. Incomplete coalescence and pits were also observed in the latter areas.

  20. Spontaneous versus induced hydrogen and deuterium helical shaped plasmas with electron internal transport barriers

    NASA Astrophysics Data System (ADS)

    Gobbin, M.; Franz, P.; Auriemma, F.; Lorenzini, R.; Marrelli, L.

    2015-09-01

    Electron internal transport barriers (eITBs) in high current plasmas with helical equilibria of the reversed field pinch experiment RFX-mod are analyzed and characterized in detail thanks to a high time resolution double filter diagnostic for the electron temperature spatial profile determination. The large amount of data provided by this diagnostic has required the development of dedicated algorithms and the identification of suitable parameters, reported and described in this paper, in order to perform automatic statistical studies. These numerical tools have been used to examine the effect of three dimensional (3D) magnetic fields applied by the RFX-mod 192 active coils in deuterium and hydrogen discharges with the aim to improve the sustainment and control of helical equilibria with eITBs. It is shown that 3D fields partially increase the occurring of helical states but with only a moderate effect on the eITBs duration; moreover, they have a different impact on the confinement properties in hydrogen and deuterium discharges. Numerical simulations, by the Hamiltonian guiding center code ORBIT, investigate the effect of magnetic topology in plasmas with and without the application of 3D fields on deuterium and hydrogen test ions transport. Results from numerical studies are in agreement with estimates of the particle confinement times showing that particle transport is reduced in deuterium plasmas but not significantly affected by the application of helical boundary conditions.

  1. Positron impact excitations of hydrogen atom embedded in dense quantum plasmas: Formation of Rydberg atoms

    SciTech Connect

    Rej, Pramit; Ghoshal, Arijit

    2014-11-15

    Formation of Rydberg atoms due to 1 s → nlm excitations of hydrogen by positron impact, for arbitrary n, l, m, in dense quantum plasma has been investigated using a distorted wave theory which includes screened dipole polarization potential. The interactions among the charged particles in the plasma have been represented by exponential cosine-screened Coulomb potentials. Making use of a simple variationally determined hydrogen wave function, it has been possible to obtain the distorted wave scattering amplitude in a closed analytical form. A detailed study has been made to explore the structure of differential and total cross sections in the energy range 20–300 eV of incident positron. For the unscreened case, our results agree nicely with some of the most accurate results available in the literature. To the best of our knowledge, such a study on the differential and total cross sections for 1 s → nlm inelastic positron-hydrogen collisions in dense quantum plasma is the first reported in the literature.

  2. Atomic and molecular hydrogen gas temperatures in a low-pressure helicon plasma

    NASA Astrophysics Data System (ADS)

    Samuell, Cameron M.; Corr, Cormac S.

    2015-08-01

    Neutral gas temperatures in hydrogen plasmas are important for experimental and modelling efforts in fusion technology, plasma processing, and surface modification applications. To provide values relevant to these application areas, neutral gas temperatures were measured in a low pressure (< 10 mTorr) radiofrequency helicon discharge using spectroscopic techniques. The atomic and molecular species were not found to be in thermal equilibrium with the atomic temperature being mostly larger then the molecular temperature. In low power operation (< 1 kW), the molecular hydrogen temperature was observed to be linearly proportional to the pressure while the atomic hydrogen temperature was inversely proportional. Both temperatures were observed to rise linearly with input power. For high power operation (5-20 kW), the molecular temperature was found to rise with both power and pressure up to a maximum of approximately 1200 K. Spatially resolved measurements near a graphite target demonstrated localised cooling near the sample surface. The temporal evolution of the molecular gas temperature during a high power 1.1 ms plasma pulse was also investigated and found to vary considerably as a function of pressure.

  3. Theoretical investigation of the effect of hydrogen addition on the formation and properties of soliton in direct current argon plasma

    NASA Astrophysics Data System (ADS)

    Saikia, P.; Goswami, K. S.; Saikia, B. K.

    2014-03-01

    In this study the effect of hydrogen addition on the formation and properties of soliton in direct-current (DC) argon plasma is theoretically investigated. By coupling fluid equations with Poisons equation for such multi-component plasma, the Mach number and amplitude of the soliton are determined following pseudo potential method. Addition of hydrogen in argon discharge leads to the decrease of electron, Ar+ ion density while a reverse trend was observed for ArH+ and hydrogen like ions. It was found that presence of hydrogen like ions in argon plasma affects the formation of soliton with its amplitude significantly decreases as concentration of hydrogen increases. On the other hand, increase in ion to electron temperature ratios of the lighter ions in the discharge also has a significant influence on the amplitude and formation of soliton. The inverse relation between solitons width and amplitude is found to be consistent for the entire range of study.

  4. Theoretical investigation of the effect of hydrogen addition on the formation and properties of soliton in direct current argon plasma

    SciTech Connect

    Saikia, P. Goswami, K. S.; Saikia, B. K.

    2014-03-15

    In this study the effect of hydrogen addition on the formation and properties of soliton in direct-current (DC) argon plasma is theoretically investigated. By coupling fluid equations with Poisons equation for such multi-component plasma, the Mach number and amplitude of the soliton are determined following pseudo potential method. Addition of hydrogen in argon discharge leads to the decrease of electron, Ar{sup +} ion density while a reverse trend was observed for ArH{sup +} and hydrogen like ions. It was found that presence of hydrogen like ions in argon plasma affects the formation of soliton with its amplitude significantly decreases as concentration of hydrogen increases. On the other hand, increase in ion to electron temperature ratios of the lighter ions in the discharge also has a significant influence on the amplitude and formation of soliton. The inverse relation between solitons width and amplitude is found to be consistent for the entire range of study.

  5. Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

    NASA Astrophysics Data System (ADS)

    Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

    2016-10-01

    Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights