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Sample records for hypercoordinate silicon compounds

  1. Hypercoordinate silicon complexes based on hydrazide ligands. A remarkably flexible molecular system.

    PubMed

    Kost, Daniel; Kalikhman, Inna

    2009-02-17

    Though only one row apart on the periodic table, silicon greatly differs from carbon in its ability to readily form five- and six-coordinate complexes, termed "hypercoordinate silicon compounds". The assorted chemistry of these compounds is varied in both structures and reactivity and has generated a flurry of innovative research endeavors in recent years. This Account summarizes the latest work done on a specific class of hypercoordinate silicon compounds, specifically those with two hydrazide-derived chelate rings. This family is especially interesting due to the ability to form multiple penta- and hexacoordinate complexes, the chemical reactivity of pentacoordinate complexes, and the observation of intermolecular ligand crossovers in hexacoordinate complexes. Pentacoordinate complexes in this family exhibit marked structural flexibility, as demonstrated by the construction of a complete hypothetical Berry-pseudorotation reaction coordinate generated from individual crystallographic molecular structures. Although hexacoordinate complexes generally crystallize as octahedra, with a decrease in the ligand donor strength the complexes can crystallize as bicapped tetrahedra. Hexacoordinate complexes bearing a halogen ligand undergo a solvent-driven equilibrium ionic dissociation, which is controlled by solvent, temperature, counterion, and chelate structure and has been directly demonstrated by conductivity measurements and temperature-dependent (29)Si NMR. Hexacoordinate silicon complexes can also undergo reversible neutral nonionic dissociation of the N-Si dative bond. Ionic pentacoordinate siliconium salts react readily via methyl halide elimination, initiated by their own counterion acting as a base. Pentacoordinate complexes can also undergo intramolecular aldol condensations of imines, which may find potential as a template for organic synthesis. In addition, these complexes are capable of performing an uncatalyzed intramolecular hydrosilylation of imine double

  2. Four Decades of the Chemistry of Planar Hypercoordinate Compounds.

    PubMed

    Yang, Li-Ming; Ganz, Eric; Chen, Zhongfang; Wang, Zhi-Xiang; Schleyer, Paul von Ragué

    2015-08-10

    The idea of planar tetracoordinate carbon (ptC) was considered implausible for a hundred years after 1874. Examples of ptC were then predicted computationally and realized experimentally. Both electronic and mechanical (e.g., small rings and cages) effects stabilize these unusual bonding arrangements. Concepts based on the bonding motifs of planar methane and the planar methane dication can be extended to give planar hypercoordinate structures of other chemical elements. Numerous planar configurations of various central atoms (main-group and transition-metal elements) with coordination numbers up to ten are discussed herein. The evolution of such planar configurations from small molecules to clusters, to nanospecies and to bulk solids is delineated. Some experimentally fabricated planar materials have been shown to possess unusual electrical and magnetic properties. A fundamental understanding of planar hypercoordinate chemistry and its potential will help guide its future development.

  3. On the Formation of "Hypercoordinated" Uranyl Complexes

    SciTech Connect

    Schoendorff, George E.; De Jong, Wibe A.; van Stipdonk, Michael J.; Gibson, John K.; Rios, Daniel; Gordon, Mark S.; Windus, Theresa L.

    2011-09-05

    Recent gas phase experimental studies suggest the presence of hypercoordinated uranyl complexes. Coordination of acetone (Ace) to uranyl to form hypercoordinated species is examined using density functional theory (DFT) with a range of functionals and second order perturbation theory (MP2). Complexes with up to eight acetones were studied. It is shown that no more than six acetones can bind directly to uranium and that the observed uranyl complexes are not hypercoordinated.

  4. Compounding with Silicones.

    PubMed

    Allen, Loyd V

    2015-01-01

    Since the 1940s, methylchlorosilanes have been used to treat glassware to prevent blood from clotting. The use of silicones in pharmaceutical and medical applications has grown to where today they are used in many life-saving devices (pacemakers, hydrocephalic shunts) and pharmaceutical applications from tubing, to excipients in topical formulations, to adhesives to affix transdermal drug delivery systems, and are also being used in products as active pharmaceutical ingredients, such as antiflatulents. About 60% of today's skin-care products now contain some type of silicone where they are considered safe and are known to provide a pleasant "silky-touch," non-greasy, and non-staining feel. Silicones exhibit many useful characteristics, and the safety of these agents supports their numerous applications; their biocompatibility is partially due to their low-chemical reactivity displayed by silicones, low-surface energy, and their hydrophobicity. Silicones are used both as active ingredients and as excipients. In addition is their use for "siliconization," or surface treatment, of many parenteral packaging components. Dimethicone and silicone oil are used as lubricants on stoppers to aid machineability, in syringes to aid piston movement, or on syringe needles to reduce pain upon injection. Silicones are also useful in pharmaceutical compounding as is discussed in this artiele included with this article are in developing formulations with silicones.

  5. A DFT study of hypercoordinated copper silicide nanotubes

    NASA Astrophysics Data System (ADS)

    Ai, Ling-Yan; Zhao, Hui-Yan; Wang, Jing; Liu, Ying

    2017-03-01

    The stability and electronic structures of copper silicide nanotubes (CuSiNTs) are calculated using first-principles density functional theory. Here these CuSiNTs of various different diameters, chiral vectors and morphologies were obtained by rolling up a novel two-dimensional hypercoordinated Cu2Si monolayer with high stability (Yang et al., J. Am. Chem. Soc. 137 (2015) 2757-2762). Electronic structure calculations showed that these CuSiNTs are conductors independent of their chiral vectors, diameters and morphologies. In addition, molecular dynamics (MD) simulations of the (6, 0) tube and the (8, 4) tube were performed. It was found that the (8, 4) tube has very good thermal stability and that its structure does not break down during MD simulations at initial temperatures up to 1500 K. Based on their electrical conductivity and good thermal stability, these CuSiNTs are promising candidates to envision application as metallic connections in nanoscale electronic devices.

  6. Silicones As Connector-Potting Compounds

    NASA Technical Reports Server (NTRS)

    Bouquet, Frank L.; Bickler, Marjorie S.

    1988-01-01

    Report evaluates silicone potting materials for electrical connectors. Describes tests of connector specimens made with CV-2510 and DC-6-1104 silicones with dibutyl tin dilaurate catalyst and evaluates test results in light of previously published test results for polyurethanes. Discusses requirements for connector-potting materials, methods used to evaluate silicones, techniques for preparing specimens, and results of tests. Identifies commercial sources of silicone potting materials.

  7. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  8. Stereochemistry of silicon in oxygen-containing compounds

    NASA Astrophysics Data System (ADS)

    Serezhkin, V. N.; Urusov, V. S.

    2017-01-01

    Specific stereochemical features of silicon in oxygen-containing compounds, including hybrid silicates with all oxygen atoms of SiOn groups (n = 4, 5, or 6) entering into the composition of organic anions or molecules, are described by characteristics of Voronoi—Dirichlet polyhedra. It is found that in rutile-like stishovite and post-stishovite phases with the structures similar to those of CaCl2, α-PbO2, or pyrite FeS2, the volume of Voronoi—Dirichlet polyhedra of silicon and oxygen atoms decreases linearly with pressure increasing to 268 GPa. Based on these results, the possibility of formation of new post-stishovite phases is shown, namely, the fluorite-like structure (transition predicted at 400 GPa) and a body-centered cubic lattice with statistical arrangement of silicon and oxygen atoms ( 900 GPa).

  9. An investigation of the gettering properties of silicon-germanium and silicon-carbon compounds

    SciTech Connect

    Barbero, C.J.

    1993-01-01

    Work concerning silicon-germanium (SiGe) and silicon-carbon (SiC) compounds is presented in this dissertation. Extended Hueckel (EHT) parameters for the band structure of group IV semiconductors and semiconductor compounds are put forth using established parameters. It will be demonstrated that EHT theory can accurately predict the band structure for the pure group IV semiconductors, however provides notably unusual results for alloy systems. Relativistic Extended Hueckel (REX) Theory is employed to understand the outcome of transition metals in SiGe and SiC compounds. The gettering effect and efficiency of germanium and carbon is demonstrated by using a 54 atom cluster. SiGe and SiC samples were prepared using keV ion implantation. It was found that annealing germanium implanted samples constrains germanium in a substitutional position. The consequences of different doses and different energies for germanium implanted silicon is also explored. It is established that increasing energy as well as increasing dose has the effect of creating amorphous layers and can cause alloying. Some of the germanium implanted silicon samples were used to study the gettering of copper, which was evaporated on the backside of the samples. Further studies include keV ion implantation of transition metals (iron and nickel) into silicon substrates that were implanted with MeV germanium and carbon prior to keV (iron and nickel) implantation. The effects of transition metals (i.e., iron, nickel and copper) evaporated on ultrahigh vacuum-chemical vapor deposition (UHV-CVD) prepared SiGe compounds was also investigated. Techniques such as Rutherford Backscattering (RBS), Ion Channeling, Secondary Ion Mass Spectrometry (SIMS), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) were used to study the effects of implantation energy, implantation dose and annealing temperature as well as the different results produced by introduction of several transition metals.

  10. Optical characterization of RTV615 silicone rubber compound

    NASA Astrophysics Data System (ADS)

    Li, W.; Huber, G. M.

    2014-07-01

    Room Temperature Vulcanized (RTV) silicone compounds are commonly used to bond optical components. For our application, we needed to identify an adhesive with good ultraviolet transmission characteristics, to couple photomultipliers to quartz windows in a Heavy Gas Čerenkov detector that is being constructed for Experimental Hall C of Jefferson Lab to provide π/K separation up to 11 GeV/c. To this end, we present the light transmission results for Momentive RTV615 silicone rubber compound for wavelengths between 195-400 nm, obtained with an adapted reflectivity apparatus at Jefferson Lab. All samples cured at room temperature have transmissions ~ 93% for wavelengths between 360-400 nm and fall sharply below 230 nm. Wavelength dependent absorption coefficients were extracted with four samples of different thicknesses cured at normal temperature (25° C for 7 days). The absorption coefficient drops approximately two orders in magnitude from 220-400 nm, exhibiting distinct regions of flattening near 250 nm and 330 nm. We also investigated the effect of a high temperature curing method (100° C for 1 hour) and found 5-10% better transmission than with the normal method. The effect was more significant with larger sample thickness (3.35 mm) over the wavelength range of 220-280 nm.

  11. Sputtering of silicon and its compounds in the electronic stopping region

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Griffith, J. E.; Meng, W. J.; Tombrello, T. A.

    1983-01-01

    Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers).

  12. Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer).

    PubMed

    Liu, Yiming; Sun, Yun; Liu, Wei; Yao, Jianghong

    2014-08-07

    With an amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction structure, the heterojunction with intrinsic thin-layer (HIT) solar cell has become one of the most promising technologies for c-Si based solar cells. By replacing a-Si:H thin films with appropriate compound semiconductors, we propose novel heterojunction structures which allow c-Si heterojunction solar cells to possess higher power conversion efficiencies than HIT solar cells. Several promising heterojunction candidates and hetero-structures have been proposed in this work, and this kind of novel c-Si compound heterojunction solar cell is denominated HCT (heterojunction with a compound thin-layer). The feasibilities of these novel HCT structures are further investigated by theoretical approaches, and the modeling results demonstrate the device performance improvement. Finally, this paper proclaims the compound selection standards and essentials of achieving high-efficiency HCT solar cells, which are guidelines for the real device implementation.

  13. Compounds from Silicones Alter Enzyme Activity in Curing Barnacle Glue and Model Enzymes

    PubMed Central

    Rittschof, Daniel; Orihuela, Beatriz; Harder, Tilmann; Stafslien, Shane; Chisholm, Bret; Dickinson, Gary H.

    2011-01-01

    Background Attachment strength of fouling organisms on silicone coatings is low. We hypothesized that low attachment strength on silicones is, in part, due to the interaction of surface available components with natural glues. Components could alter curing of glues through bulk changes or specifically through altered enzyme activity. Methodology/Principal Findings GC-MS analysis of silicone coatings showed surface-available siloxanes when the coatings were gently rubbed with a cotton swab for 15 seconds or given a 30 second rinse with methanol. Mixtures of compounds were found on 2 commercial and 8 model silicone coatings. The hypothesis that silicone components alter glue curing enzymes was tested with curing barnacle glue and with commercial enzymes. In our model, barnacle glue curing involves trypsin-like serine protease(s), which activate enzymes and structural proteins, and a transglutaminase which cross-links glue proteins. Transglutaminase activity was significantly altered upon exposure of curing glue from individual barnacles to silicone eluates. Activity of purified trypsin and, to a greater extent, transglutaminase was significantly altered by relevant concentrations of silicone polymer constituents. Conclusions/Significance Surface-associated silicone compounds can disrupt glue curing and alter enzyme properties. Altered curing of natural glues has potential in fouling management. PMID:21379573

  14. Modifying a silicone potting compound for space flight applications

    NASA Technical Reports Server (NTRS)

    Park, J. J.; Clatterbuck, C. H.

    1982-01-01

    RTV-615 has been devolatilized by subjecting the uncatalyzed resin to a temperature of between 125 and 150 C for 24 hours in a vacuum of about 10 to the -6th torr. The resultant resin can be catalyzed and after a room temperature cure the outgassing of the resin is sufficiently low when tested according to ASTM E-595 that it is suitable for space flight use. Tests of physical properties of the cured devolatilized resin were compared with those of the as received silicone. The devolatilized silicones are slightly harder, have a higher tear resistance and higher tensile strengths.

  15. A Technique for Reducing the Outgassing of Silicone Compounds

    NASA Technical Reports Server (NTRS)

    Park, J. J.; Clatterbuck, C. H.

    1982-01-01

    A technique was developed to heat silicone resins in vacuum and thereby remove the low molecular weight molecules which contribute to the high outgassing of the untreated resins. The technique was successfully applied to two silicone resins. Heating the monomer to a temperature about 398 K (125 C) in a vacuum of about 0.0001 N/sq m removes about 10% of the resin weight, and the resultant resin when catalyzed can meet the outgassing requirements when tested according to ASTM E-595. The physical properties of RTV-615 when devolatilized at 398 K (125 C) or at 423 K (150 C) were measured.

  16. Self-Assembly in Systems Containing Silicone Compounds

    SciTech Connect

    Ferreira, Maira Silva; Loh, Watson

    2009-01-29

    Chemical systems formed by silicone solvents and surfactants have potential applications in a variety of industrial products. In spite of their technological relevance, there are few reports on the scientific literature that focus on characterizing such ternary systems. In this work, we have aimed to develop a general, structural investigation on the phase diagram of one system that typically comprises silicone-based chemicals, by means of the SAXS (small-angle X-ray scattering) technique. Important features such as the presence of diverse aggregation states in the overall system, either on their own or in equilibrium with other structures, have been detected. As a result, optically isotropic chemical systems (direct and/or reversed microemulsions) and liquid crystals with lamellar or hexagonal packing have been identified and characterized.

  17. Formation of dielectric silicon compounds by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Voronov, Yu A.

    2016-09-01

    The paper is devoted to the study of reactive magnetron sputtering of the silicon target in the ambient of inert argon gas with reactive gas, nitrogen or oxygen. The magnetron was powered by two mid-frequency generators of a rectangular pulse of opposite polarity. The negative polarity pulse provides the sputtering of the target. The positive polarity pulse provides removal of accumulated charge from the surface of the target. This method does not require any special devices of resistances matching and provides continuous sputtering of the target.

  18. Electrocatalytic Formation and Inactivation of Intermetallic Compounds in Electrorefining of Silicon

    NASA Astrophysics Data System (ADS)

    Olsen, Espen; Rolseth, Sverre; Thonstad, Jomar

    2010-08-01

    Silicon for solar cell purposes is today produced by an energy intensive process exhibiting high irreversible thermodynamic energy losses. The purity of the product; 99,9999999 pct (9N), far exceeds what is generally accepted to be the requirements for photovoltaic purposes (4-6N). According to thermodynamics, all elements except boron may be removed from silicon by three layer electrochemical refining above the melting point of Si. Boron, on the other hand, shows higher affinity to specific transition metals compared to silicon. This may be exploited by applying two principles in parallel; electrochemical refining and electrocatalyzed reaction-precipitation of transition metal borides as heavy, stable particles. In this study we report on the formation of such compounds at the cathode-electrolyte interface during electrochemical refining. The trends and mechanisms observed in the laboratory scale investigation indicate that high purity silicon may be produced in industrial scale reactors at low cost- and energy intensity.

  19. Volatile organic silicon compounds in biogases: development of sampling and analytical methods for total silicon quantification by ICP-OES.

    PubMed

    Chottier, Claire; Chatain, Vincent; Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

    2014-01-01

    Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES.

  20. Volatile Organic Silicon Compounds in Biogases: Development of Sampling and Analytical Methods for Total Silicon Quantification by ICP-OES

    PubMed Central

    Julien, Jennifer; Dumont, Nathalie; Lebouil, David; Germain, Patrick

    2014-01-01

    Current waste management policies favor biogases (digester gases (DGs) and landfill gases (LFGs)) valorization as it becomes a way for energy politics. However, volatile organic silicon compounds (VOSiCs) contained into DGs/LFGs severely damage combustion engines and endanger the conversion into electricity by power plants, resulting in a high purification level requirement. Assessing treatment efficiency is still difficult. No consensus has been reached to provide a standardized sampling and quantification of VOSiCs into gases because of their diversity, their physicochemical properties, and the omnipresence of silicon in analytical chains. Usually, samplings are done by adsorption or absorption and quantification made by gas chromatography-mass spectrometry (GC-MS) or inductively coupled plasma-optical emission spectrometry (ICP-OES). In this objective, this paper presents and discusses the optimization of a patented method consisting in VOSiCs sampling by absorption of 100% ethanol and quantification of total Si by ICP-OES. PMID:25379538

  1. Anisotropic etching of silicon in solutions containing tensioactive compounds

    NASA Astrophysics Data System (ADS)

    Zubel, Irena

    2016-12-01

    The results of investigations concerning anisotropic etching in 3M KOH and 25% TMAH solutions modified by tensioactive compounds such as alcohols, diols and a typical surfactant Triton X100 have been compared. Etching anisotropy was assessed on the basis of etch rates ratio V(110)/V(100). It was stated that the relation between surface tension of the solutions and etch rates of particular planes depend not only on the kind of surfactant but also on the kind of etching solution (KOH, TMAH). It points out an important role of TMA+ ions in the etching process, probably in the process of forming an adsorption layer, consisting of the molecules of tensioactive compounds on Si surface, which decides about etch rate. We have observed that this phenomenon occurs only at high concentration of TMA+ ions (25% TMAH). Reduction of TMAH concentration changes the properties of surfactant containing TMAH solutions. From all investigated solutions, the solutions that assured developing of (110) plane inclined at the angle of 45° to (100) substrate were selected. Such planes can be used as micromirrors in MOEMS structures. The solutions provide the etch rate ratio V(110)/V(100)<0.7, thus they were selected from hydroxide solutions containing surfactants. A simple way for etch rate anisotropy V(110)/V(100) assessment based on microscopic images etched structures has been proposed.

  2. Phase diagram and electrical behavior of silicon-rich iridium silicide compounds

    NASA Technical Reports Server (NTRS)

    Allevato, C. E.; Vining, Cronin B.

    1992-01-01

    The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi sub about 3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi sub about 3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83 +/- 1 atomic percent silicon was observed between IrSi sub about 3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi sub about 3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 x 10 exp -6 ohms-m.

  3. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOEpatents

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  4. Evaluation of a Silicone Membrane as an Alternative to Human Skin for Determining Skin Permeation Parameters of Chemical Compounds.

    PubMed

    Uchida, Takashi; Yakumaru, Masafumi; Nishioka, Keisuke; Higashi, Yoshihiro; Sano, Tomohiko; Todo, Hiroaki; Sugibayashi, Kenji

    2016-01-01

    We evaluated the effectiveness of a silicone membrane as an alternative to human skin using the skin permeation parameters of chemical compounds. An in vitro permeation study using 15 model compounds was conducted, and permeation parameters comprising permeability coefficient (P), diffusion parameter (DL(-2)), and partition parameter (KL) were calculated from each permeation profile. Significant correlations were obtained in log P, log DL(-2), and log KL values between the silicone membrane and human skin. DL(-2) values of model compounds, except flurbiprofen, in the silicone membrane were independent of the lipophilicity of the model compounds and were 100-fold higher than those in human skin. For antipyrine and caffeine, which are hydrophilic, KL values in the silicone membrane were 100-fold lower than those in human skin, and P values, calculated as the product of a DL(-2) and KL, were similar. For lipophilic compounds, such as n-butyl paraben and flurbiprofen, KL values for silicone were similar to or 10-fold higher than those in human skin, and P values for silicone were 100-fold higher than those in human skin. Furthermore, for amphiphilic compounds with log Ko/w values from 0.5 to 3.5, KL values in the silicone membrane were 10-fold lower than those in human skin, and P values for silicone were 10-fold higher than those in human skin. The silicone membrane was useful as a human skin alternative in an in vitro skin permeation study. However, depending on the lipophilicity of the model compounds, some parameters may be over- or underestimated.

  5. Revealing unusual chemical bonding in planar hyper-coordinate Ni2Ge and quasi-planar Ni2Si two-dimensional crystals.

    PubMed

    Yang, Li-Ming; Popov, Ivan A; Frauenheim, Thomas; Boldyrev, Alexander I; Heine, Thomas; Bačić, Vladimir; Ganz, Eric

    2015-10-21

    We discover unusual chemical bonding in a novel planar hyper-coordinate Ni2Ge free-standing 2D monolayer, and also in a nearly planar slightly buckled Ni2Si monolayer. This unusual bonding is revealed by Solid State Adaptive Natural Density Partitioning analysis. This analysis shows that a new type of 2c-2e Ni-Si σ and 3c-2e Ni-Ge-Ni σ bonds stabilize these 2D crystals. This is completely different from any previously known 2D crystals. Both of these free-standing monolayers are global minima in two-dimensional space. Although their exotic structure has unprecedented chemical bonding, they show extraordinary stability as single layers. The stabilities of these frameworks are confirmed by phonon dispersion calculations and ab initio molecular dynamics calculations. For Ni2Si, the framework was maintained during short 10 ps molecular dynamics annealing up to 1500 K, while Ni2Ge survived 10 ps runs up to 900 K. Both systems are predicted to be non-magnetic and metallic. As these new 2D crystals contain hypercoordinated Group 14 atoms, they are examples of a new class of 2D crystals with unconventional chemical bonding and potentially exciting new properties. Interestingly, we find that the stabilities of Ni2Si and Ni2Ge are much higher than that of silicene and germanene. Thus, this work provides a novel way to stabilize 2D sheets of Group 14 elements.

  6. A study of the role of fillers in silicone rubber compounds for outdoor insulation

    NASA Astrophysics Data System (ADS)

    Meyer, Luiz Henrique

    Polymeric materials are being used as a housing material on high voltage outdoor insulation as an alternative to porcelain or glass in line insulators, surge arresters, station posts, and bushings. Among the polymeric materials in use, silicone rubber has proven to have good aging performance under polluted conditions by keeping low levels of leakage current by virtue of its hydrophobicity. However, the exposure of polymeric materials to contaminated and humid environments can lead to certain surface conditions that reduces hydrophobicity increasing leakage current levels, giving rise to dry band arcing. Dry band arcing produces heat, which can result in tracking or erosion of the housing material. Although this dry band arcing does not harm porcelain or glass housings, it will erode pure silicone rubber to such an extent that its application in outdoor environments is not, practical. Fillers are added to silicone rubber to improve tracking and erosion resistance. Among the filler choices, alumina trihydrate (ATH) and silica have been extensively adopted in the compounding of polymeric housings. ATH is a flame retardant that has a molecular water in its formulation. Whenever the surface temperature of an ATH filled polymer reaches approximately 220°C, the water of hydration is released from the ATH molecule, what is recognized as an efficient way to cool down the surface, for example, in the case of dry band arcing. Alternatively, silica has very good bonding with the polymer backbone, imparting mechanical strength to the composite matrix. In addition, fillers such as ATH or silica increase the thermal conductivity of silicone rubber composites, which facilitates moving the heat away from its source, that is, from the origin of dry band arcing. Although heat is considered to be the main degradation factor when dry band arcing occurs, very little information is available on the thermal performance of filled silicone rubber. The standard methods available to test

  7. Calibration of silicone rubber passive samplers: experimental and modeled relations between sampling rate and compound properties.

    PubMed

    Rusina, Tatsiana P; Smedes, Foppe; Koblizkova, Martina; Klanova, Jana

    2010-01-01

    Sampling rates (Rs) for silicone rubber (SR) passive samplers were measured under two different hydrodynamic conditions. Concentrations were maintained in the aqueous phase by continuous equilibration with SR sheets of a large total surface area which had been spiked with polycyclic aromatic hydrocarbons and/or polychlorinated biphenyls. Test sheets made of the same SR but of much smaller surface area were used to measure the uptake rate. Measured Rs values decreased with increasing passive sampler-water partition coefficient (Kpw) according to Rs approximately Kpw(-0.08) under both hydrodynamic conditions. This decrease is not significantly different from modeled values if the uncertainty of the diffusion coefficients in water is included. Modeling also confirmed that uptake of the test compounds under the experimental conditions was entirely controlled by diffusion in the water phase. A model using Rs approximately M(-0.47) is suggested for extrapolation of Rs estimated from the dissipation of performance reference compounds to target compounds in a higher hydrophobicity range.

  8. Organic silicon compounds anf hydrogen sulfide removal from biogas by mineral and adsorbent

    NASA Astrophysics Data System (ADS)

    Choi, J.

    2015-12-01

    Biogas utilized for energy production needs to be free from organic silicon compounds and hydrogen sulfide , as their burning has damaging effects on utilities and humans; organic silicon compounds and hydrogen sulfide can be found in biogas produced from biomass wastes, due to their massive industrial use in synthetic product,such as cosmetics, detergents and paints.Siloxanes and hydrogen sulfide removal from biogas can be carried out by various methods (Ajhar et al., 2010); aim of the present work is to find a single practical andeconomic way to drastically and simultaneously reduce both hydrogen sulfide and the siloxanes concentration to less than 1 ppm. Some commercial activated carbons previously selected (Monteleoneet al., 2011) as being effective in hydrogen sulfide up taking have been tested in an adsorption measurement apparatus, by flowing both hydrogen sulphide and volatile siloxane (Decamethycyclopentasiloxane or D5) in a nitrogen stream,typically 25-300 ppm D5 over N2, through an clay minerals, Fe oxides and Silica; the adsorption process was analyzed by varying some experimental parameters (concentration, grain size, bed height). The best silica shows an adsorption capacity of 0.2 g D5 per gram of silica. The next thermo gravimetric analysis (TGA) confirms the capacity data obtained experimentally by the breakthrough curve tests.The capacity results depend on D5 and hydrogen sulphide concentrations. A regenerative silica process is then carried out byheating the silica bed up to 200 ° C and flushing out the adsorbed D5 and hydrogen sulphide samples in a nitrogen stream in athree step heating procedure up to 200 ° C. The adsorption capacity is observed to degrade after cyclingthe samples through several adsorption-desorption cycles.

  9. Silicon microfabricated column with microfabricated differential mobility spectrometer for GC analysis of volatile organic compounds.

    PubMed

    Lambertus, Gordon R; Fix, Cory S; Reidy, Shaelah M; Miller, Ranaan A; Wheeler, David; Nazarov, Erkinjon; Sacks, Richard

    2005-12-01

    A 3.0-m-long, 150-microm-wide, 240-microm-deep channel etched in a 3.2-cm-square silicon chip, covered with a Pyrex wafer, and coated with a dimethyl polysiloxane stationary phase is used for the GC separation of volatile organic compounds. The column, which generates approximately 5500 theoretical plates, is temperature-programmed in a conventional convection oven. The column is connected through a heated transfer line to a microfabricated differential mobility spectrometer. The spectrometer incorporates a 63Ni source for atmospheric-pressure chemical ionization of the analytes. Nitrogen or air transport gas (flow 300 cm(3)/min) drives the analyte ions through the cell. The spectrometer operates with an asymmetric radio frequency (RF) electric field between a pair of electrodes in the detector cell. During each radio frequency cycle, the ion mobility alternates between a high-field and a low-field value (differential mobility). Ions oscillate between the electrodes, and only ions with an appropriate differential mobility reach a pair of biased collectors at the downstream end of the cell. A compensation voltage applied to one of the RF electrodes is scanned to allow ions with different differential mobilities to pass through the cell without being annihilated at the RF electrodes. A unique feature of the device is that both positive and negative ions are detected from a single experiment. The combined microfabricated column and detector is evaluated for the analysis of volatile organic compounds with a variety of functionalities.

  10. Calculated dipole moments for silicon and phosphorus compounds of astrophysical interest.

    PubMed

    Müller, Holger S P; Woon, David E

    2013-12-19

    Dipole moments, which contribute to the intensities of rotational transitions and also affect reactivity, have been computed for nearly 80 compounds with up to 6 atoms containing silicon or phosphorus. More than a dozen of the set have been detected in interstellar or circumstellar media. The remaining ones are related to these, and several of them may be found in space in the future. We compare results from the commonly used B3LYP level of density functional theory with ab initio results at the coupled cluster CCSD(T)/RCCSD(T) levels of theory. Correlation consistent basis sets as large as quintuple ζ quality were used, and extrapolations to the estimated complete basis set (CBSE) limit were performed for almost all of the species with coupled cluster theory. In addition to evaluating the accuracy of the results against available data, we explore various issues: the critical importance of including diffuse basis functions, the range of basis set dependence exhibited by the suite of molecules, and the presence of low-lying excited states for some species. Dipole polarizabilities are also reported at the CCSD(T)/RCCSD(T) CBSE level.

  11. Monolayer contact doping of silicon surfaces and nanowires using organophosphorus compounds.

    PubMed

    Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

    2013-12-02

    Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures(1). MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

  12. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

    PubMed Central

    Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

    2013-01-01

    Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

  13. Toxic Compounds in Our Food: Arsenic Uptake By Rice and Potential Mitigation By Silicon

    NASA Astrophysics Data System (ADS)

    Seyfferth, A.; Gill, R.; Penido, E.

    2014-12-01

    Arsenic is a ubiquitous element in soils worldwide and has the potential to negatively impact human and ecosystem health under certain biogeochemical conditions. While arsenic is relatively immobile in most oxidized soils due to a high affinity for soil solids, arsenic becomes mobilized under reduced soil conditions due to the reductive dissolution of iron(III) oxides thereby releasing soil-bound arsenic. Since arsenic is a well-known carcinogen, this plant-soil process has the potential to negatively impact the lives of billions of rice consumers worldwide upon plant uptake and grain storage of released arsenic. Moreover, arsenic uptake by rice is excacerbated by the use of As-laden groundwater for rice irrigation. One proposed strategy to decrease arsenic uptake by rice plants is via an increase in dissolved silicon in paddy soil solution (pore-water), since silicic acid and arsenous acid share an uptake pathway. However, several soil processes that influence arsenic cycling may be affected by silicon including desorption from bulk soil, formation and mineralogy of iron(III) oxide plaque, and adsorption/desorption onto/from iron plaque; the effect of silicon on these soil processes will ultimately dictate the effectiveness of altered dissolved silicon in decreasing arsenic uptake at the root, which in turn dictates the concentration of arsenic found in grains. Furthermore, the source of silicon may impact carbon cycling and, in particular, methane emissions. Here, impacts of altered dissolved silicon on processes that affect rhizospheric biogeochemical cycling of arsenic and subsequent plant-uptake, and how it influences other biogeochemical cycles such as carbon and iron are investigated. We show that silicon can decrease arsenic uptake and grain storage under certain conditions, and that altered silicon affects the type of iron (III) oxide that comprises iron plaque.

  14. Coordination compounds of tetravalent silicon, germanium and tin: the structure, chemical bonding and intermolecular interactions in them

    NASA Astrophysics Data System (ADS)

    Korlyukov, A. A.

    2015-04-01

    The review is devoted to analysis and generalization of the results of (i) quantum chemical studies on the structure, chemical bonding and intermolecular interactions in coordination compounds of tetravalent silicon, germanium and tin in crystals, in solutions and in the gas phase and (ii) experimental investigations of the electron density distribution in these systems. The bibliography includes 147 references. In memoriam of Corresponding Member of the Russian Academy of Sciences M Yu Antipin (1951 - 2013), Academician of the Russian Academy of Sciences M G Voronkov (1921 - 2014) and Dr. S P Knyazev, Lomonosov Moscow University of Fine Chemical Technology (1949 - 2012).

  15. Lewis Acidity of Bis(perfluorocatecholato)silane: Aldehyde Hydrosilylation Catalyzed by a Neutral Silicon Compound

    SciTech Connect

    Liberman-Martin, Allegra L.; Bergman, Robert G.; Tilley, T. Don

    2015-04-16

    Bis(perfluorocatecholato)silane Si(cat(F)2 was prepared, and stoichiometric binding to Lewis bases was demonstrated with fluoride, triethylphosphine oxide, and N,N'-diisopropylbenzamide. The potent Lewis acidity of Si(cat(F)2 was suggested from catalytic hydrosilylation and silylcyanation reactions with aldehydes. Mechanistic studies of hydrosilylation using an optically active silane substrate, R-(+)-methyl-(1-naphthyl)phenylsilane, proceeded with predominant stereochemical retention at silicon, consistent with a carbonyl activation pathway. The enantiospecificity was dependent on solvent and salt effects, with increasing solvent polarity or addition of NBu4BAr(F)4 leading to a diminished enantiomeric ratio. The medium effects are consistent with an ionic mechanism, wherein hydride transfer occurs prior to silicon-oxygen bond formation.

  16. Lewis Acidity of Bis(perfluorocatecholato)silane: Aldehyde Hydrosilylation Catalyzed by a Neutral Silicon Compound

    DOE PAGES

    Liberman-Martin, Allegra L.; Bergman, Robert G.; Tilley, T. Don

    2015-04-16

    Bis(perfluorocatecholato)silane Si(cat(F)2 was prepared, and stoichiometric binding to Lewis bases was demonstrated with fluoride, triethylphosphine oxide, and N,N'-diisopropylbenzamide. The potent Lewis acidity of Si(cat(F)2 was suggested from catalytic hydrosilylation and silylcyanation reactions with aldehydes. Mechanistic studies of hydrosilylation using an optically active silane substrate, R-(+)-methyl-(1-naphthyl)phenylsilane, proceeded with predominant stereochemical retention at silicon, consistent with a carbonyl activation pathway. The enantiospecificity was dependent on solvent and salt effects, with increasing solvent polarity or addition of NBu4BAr(F)4 leading to a diminished enantiomeric ratio. The medium effects are consistent with an ionic mechanism, wherein hydride transfer occurs prior to silicon-oxygen bond formation.

  17. Elastic and Thermal Properties of Silicon Compounds from First-Principles Calculations

    NASA Astrophysics Data System (ADS)

    Hou, Haijun; Zhu, H. J.; Cheng, W. H.; Xie, L. H.

    2016-07-01

    The structural and elastic properties of V-Si (V3Si, VSi2, V5Si3, and V6Si5) compounds are studied by using first-principles method. The calculated equilibrium lattice parameters and formation enthalpy are in good agreement with the available experimental data and other theoretical results. The calculated results indicate that the V-Si compounds are mechanically stable. Elastic properties including bulk modulus, shear modulus, Young's modulus, and Poisson's ratio are also obtained. The elastic anisotropies of V-Si compounds are investigated via the three-dimensional (3D) figures of directional dependences of reciprocals of Young's modulus. Finally, based on the quasi-harmonic Debye model, the internal energy, Helmholtz free energy, entropy, heat capacity, thermal expansion coefficient, Grüneisen parameter, and Debye temperature of V-Si compounds have been calculated.

  18. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    NASA Astrophysics Data System (ADS)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

    2016-12-01

    A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  19. Structural, elastic, and electronic properties of sodium atoms encapsulated type-I silicon-clathrate compound under high pressure

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Chen, Qing-Yun; Zeng, Zhao-Yi; Cai, Ling-Cang

    2015-10-01

    We calculated the structural, elastic, and electronic properties of alkali metal Na atoms doped type-I silicon-clathrate compound (Na8Si46) under pressure using first-principles methods. The obtained dependencies of bond lengths and bond angles on pressure show heterogeneous behaviors which may bring out a structural transition. By using the elastic stability criteria from the calculated elastic constants, we confirm that the Na8Si46 is elastically unstable under high pressure. Some of the mechanical and thermal quantities include bulk modulus, shear modulus, Young’s modulus, Debye temperature, sound velocity, melting point, and hardness, which are also derived from the elastic constants. The calculated total and partial electron densities of states of Na8Si46 indicate a weak interaction between the encapsulated Na atoms and the silicon framework. Moreover, the effect of pressure on its electronic structure is also investigated, which suggests that pressure is not a good choice to enhance the thermoelectricity performance of Na8Si46. Project supported by National Natural Science Foundation of China (Grant Nos. 11347134 and 11304254) and the Doctor Foundation of Southwest University of Science and Technology, China (Grant No. 13zx7125).

  20. Polar intermetallic compounds of the silicon and arsenic family elements and their ternary hydrides and fluorides

    SciTech Connect

    Leon-Escamilla, E.A.

    1996-10-17

    An investigation has been made on the effects of hydrogen and fluoride in the solid state chemistry of alkaline-earth and divalent rare-earth metal pnictide (Pn) and tetrelide (Tt) phases A{sub 5}(Pn,Tt,){sub 3}Z{sub x}, where A = Ca, Sr, Ba, Sm, Eu, Yb; Pn = As, Sb, Bi; Tt = Si, Ge, Sn, Pb and Z = H, F. Several trivalent rare-earth-metal pnictides, RE{sub 5}Pn{sub 3} (RE = Y, La, Gd, Tb, Dy, Ho, Er, Tm) and alkaline-earth-metal trielides, A{sub 5}Tr{sub 3}Z{sub x} (Tr = Ga, In, Tl) have been included in an effort to complete observed structural trends. Two main experimental techniques were followed throughout this work, (a) reactions in absence of hydrogen or under continuous high vacuum, and (b) reactions with binary metal hydrides, AH{sub x}, in closed containers. The results demonstrate that all the phases reported with the {beta}-Yb{sub 5}Sb{sub 3}-type structure in the A{sub 5}Pn{sub 3} systems are hydrogen-stabilized compounds. Reactions in absence of hydrogen lead to compounds with the Mn{sub 5}Si{sub 3}-type structure. The structure type {beta}-Yb{sub 5}Sb{sub 3} (= Ca{sub 5}SB{sub 3}F) was found to be characteristic of ternary systems and inaccurately associated with phases that form in the Y{sub 5}Bi{sub 3}-type. A new series of isomorphous Zintl compounds with the Ca{sub 16}Sb{sub 11}-type structure were prepared and studied as well. All the alkaline-earth-metal tetrelides, A{sub 5}Tt{sub 3}, that crystallize in the Cr{sub 5}B{sub 3}-type structure can be interstitially derivatized by hydrogen or fluoride. Binary and ternary compounds were characterized by Guinier powder patterns, single crystal X-ray and powder neutron diffraction techniques. In an effort to establish property-structure relationships, electrical resistivity and magnetic measurements were performed on selected systems, and the results were explained in terms of the Zintl concepts, aided by extended Hueckel band calculations.

  1. Integrating III-V compound semiconductors with silicon using wafer bonding

    NASA Astrophysics Data System (ADS)

    Zhou, Yucai

    2000-12-01

    From Main Street to Wall Street, everyone has felt the effects caused by the Internet revolution. The Internet has created a new economy in the New Information Age and has brought significant changes in both business and personal life. This revolution has placed strong demands for higher bandwidth and higher computing speed due to high data traffic on today's information highway. In order to alleviate this problem, growing interconnection bottlenecks in digital designs have to be solved. The most feasible and practical way is to replace the conventional electrical interconnect with an optical interconnect. Since silicon does not have the optical properties necessary to accommodate these optical interconnect requirements, III-V based devices, most of which are GaAs-based or InP-based, must be intimately interconnected with the Si circuit at chip level. This monolithic integration technology enables the development of both intrachip and interchip optical connectors to take advantage of the enormous bandwidth provided by both high-performance very-large-scale integrated (VLSI) circuits and allied fiber and free-space optical technologies. However, lattice mismatch and thermal expansion mismatches between III-V materials and Si create enormous challenges for developing a feasible technology to tackle this problem. Among all the available approaches today, wafer bonding distinguishes itself as the most promising technology for integration due to its ability to overcome the constraints of both lattice constant mismatch and thermal expansion coefficient differences and even strain due to the crystal orientation. We present our development of wafer bonding technology for integrating III-V with Si in my dissertation. First, the pick-and-place multiple-wafer bonding technology was introduced. Then we systematically studied the wafer bonding of GaAs and InP with Si. Both high temperature wafer fusion and low/room temperature (LT/RT) wafer bonding have been investigated for

  2. III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

    NASA Astrophysics Data System (ADS)

    Choi, Donghun

    Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre

  3. Influence of silicon defects on the adsorption of thiophene-like compounds on polycyclic aromatic hydrocarbons: a theoretical study using thiophene + coronene as the simplest model.

    PubMed

    Galano, Annia

    2007-03-08

    Physisorption and chemisorption processes of thiophene on coronene and 2Si-coronene have been studied using density functional theory and MP2 methods. These systems have been chosen as the simplest models to describe the adsorption of thiophene-like compounds on polycyclic aromatic hydrocarbons (PAHs). The calculated data suggest that the presence of silicon atoms in PAHs could favor their interaction with thiophene and similar compounds. Small stabilization energies have been found for several physisorbed complexes. The thiophene chemisorption on coronene seems very unlikely to occur, while that on 2Si-coronene leads to addition products which are very stable, with respect to the isolated reactants. These chemisorption processes were found to be exoergic (DeltaG < 0) in the gas phase and in the nonpolar liquid phase. The results reported in this work suggest that silicon defects on extended polycyclic aromatic hydrocarbons, such as graphite, soot, and large-diameter carbon nanotubes, could make them useful in the removal processes of aromatic sulfur compounds from oil hydrocarbons.

  4. Compound

    NASA Astrophysics Data System (ADS)

    Suzumura, Akitoshi; Watanabe, Masaki; Nagasako, Naoyuki; Asahi, Ryoji

    2014-06-01

    Recently, Cu-based chalcogenides such as Cu3SbSe4, Cu2Se, and Cu2SnSe3 have attracted much attention because of their high thermoelectric performance and their common feature of very low thermal conductivity. However, for practical use, materials without toxic elements such as selenium are preferable. In this paper, we report Se-free Cu3SbS4 thermoelectric material and improvement of its figure of merit ( ZT) by chemical substitutions. Substitutions of 3 at.% Ag for Cu and 2 at.% Ge for Sb lead to significant reductions in the thermal conductivity by 37% and 22%, respectively. These substitutions do not sacrifice the power factor, thus resulting in enhancement of the ZT value. The sensitivity of the thermal conductivity to chemical substitutions in these compounds is discussed in terms of the calculated phonon dispersion and previously proposed models for Cu-based chalcogenides. To improve the power factor, we optimize the hole carrier concentration by substitution of Ge for Sb, achieving a power factor of 16 μW/cm K2 at 573 K, which is better than the best reported for Se-based Cu3SbSe4 compounds.

  5. Modeling of growth and prediction of properties of electronic nanomaterials: Silicon thin films and compound semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Pandey, Sumeet C.

    The enhanced functionality and tunability of electronic nanomaterials enables the development of next-generation photovoltaic, optoelectronic, and electronic devices, as well as biomolecular tags. Design and efficient synthesis of such semiconductor nanomaterials require a fundamental understanding of the underlying process-structure/composition-property-function relationships. To this end, this thesis focuses on a systematic, comprehensive analysis of the physical and chemical phenomena that determine the composition and properties of semiconductor nanomaterials. Through synergistic combination of computational modeling and experimental studies, the thesis addresses the thermodynamics and kinetics that are relevant during synthesis and processing and their resulting impact on the properties of silicon thin films and ternary quantum dots (TQDs) of compound semiconductors. The thesis presents a computational study of the growth mechanisms of plasma deposited a-Si:H thin films based on kinetic Monte Carlo (KMC) simulations according to a transition probability database constructed by first-principles density functional theory (DFT) calculations. Based on the results, a comprehensive model is proposed for a-Si:H thin-film growth by plasma deposition under conditions that make the silyl (SiH3) radical the dominant deposition precursor. It is found that the relative roles of surface coordination defects are crucial in determining the surface composition of plasma deposited a-Si:H films and should be properly accounted for. The KMC predictions for the temperature dependence (over the range from 300 K to 700 K) of the surface concentration of SiHx(s) (x = 1,2,3) surface hydride species, the surface hydrogen content, and the surface dangling-bond coverage are in agreement with experimental measurements. In addition, the thesis details a systematic analysis of equilibrium compositional distribution in TQDs and their effects on the electronic and optoelectronic properties

  6. Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

    1989-01-01

    The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

  7. Novel phthalocyaninatobis(alkylcarboxylato)silicon(IV) compounds: NMR data and X-ray structures to study the spacing provided by long hydrocarbon tails that enhance their solubility.

    PubMed

    Sosa-Sánchez, Jose L; Sosa-Sánchez, Arturo; Farfán, Norberto; Zamudio-Rivera, Luis S; López-Mendoza, Gerson; Pérez Flores, Javier; Beltrán, Hiram I

    2005-07-04

    The reaction between trans-PcSiCl2 (1) and the potassium salts of six fatty acids (2 a-2 f) led to the trans-PcSi[OOC(CH2)nCH3]2 compounds (3 a-3 f), which were characterised by elemental analysis, IR, UV/Vis and 1H, 13C, and 29Si NMR spectroscopy. From a detailed study of the NMR spectra, the strong anisotropic currents of the Pc macrocycle were found to have an effect on up to the sixth methylenic group. As expected, the length of the hydrocarbon tail does not affect the chemical shift of the 29Si nucleus of any of the compounds, appearing at around -222.6. The structures of PcSi[OOC(CH2)nCH3]2, where n = 7, 10, 12, 13 and 20, were determined by X-ray crystallography. All the compounds were found to be triclinic with a P1 space group. In all cases the observed crystallographic pseudosymmetry is Ci and the asymmetric unit consists of half a molecule. The silicon atom is at the centre of a distorted octahedron and hence its coordination number is six. The carboxylate fragments are in a trans configuration with respect to the Pc macrocycle. The supramolecular structures are discussed in detail herein. The correlation between the 1H NMR chemical shifts and the position of the corresponding carbon atoms in the hydrocarbon tail reveals that the dicarboxylate substituents exhibit a spacer-like behaviour that enhances the solubility. A detailed study of the tail variable allowed us to evaluate the loss of radial shielding along the Pc2- ligand.

  8. Particle size distribution of aerosols sprayed from household hand-pump sprays containing fluorine-based and silicone-based compounds.

    PubMed

    Kawakami, Tsuyoshi; Isama, Kazuo; Ikarashi, Yoshiaki

    2015-01-01

    Japan has published safety guideline on waterproof aerosol sprays. Furthermore, the Aerosol Industry Association of Japan has adopted voluntary regulations on waterproof aerosol sprays. Aerosol particles of diameter less than 10 µm are considered as "fine particles". In order to avoid acute lung injury, this size fraction should account for less than 0.6% of the sprayed aerosol particles. In contrast, the particle size distribution of aerosols released by hand-pump sprays containing fluorine-based or silicone-based compounds have not been investigated in Japan. Thus, the present study investigated the aerosol particle size distribution of 16 household hand-pump sprays. In 4 samples, the ratio of fine particles in aerosols exceeded 0.6%. This study confirmed that several hand-pump sprays available in the Japanese market can spray fine particles. Since the hand-pump sprays use water as a solvent and their ingredients may be more hydrophilic than those of aerosol sprays, the concepts related to the safety of aerosol-sprays do not apply to the hand pump sprays. Therefore, it may be required for the hand-pump spray to develop a suitable method for evaluating the toxicity and to establish the safety guideline.

  9. A flexible approach to strained sandwich compounds: chiral [1]ferrocenophanes with boron, gallium, silicon, and tin in bridging positions.

    PubMed

    Sadeh, Saeid; Schatte, Gabriele; Müller, Jens

    2013-09-27

    The enantiomerically pure dibromoferrocene 3 [(Sp,Sp )-1,1'-dibromo-2,2'-di(isopropyl)ferrocene], equipped with two iPr groups in α positions, was prepared using known "Ugi amine" chemistry. Species 3 was targeted in order to gain access to new [1]ferrocenophanes ([1]FCPs) to be used as monomers for ring-opening polymerization. The iPr groups on the sandwich unit were introduced to stabilize bridging moieties, as well as to increase solubilities of targeted metallopolymers. The planar chiral dibromide 3 can quantitatively be lithiated at 0°C [2 equiv nBuLi, hexanes/thf (9:1), 30 min]. Salt-metathesis reactions with respective element dichloride species gave chiral [1]FCPs with a variety of bridging moieties [ERx =Ga[2-(Me2NCH2)C6H4] (4 a), SiMe2 (4 b), SntBu2 (4 c), BNiPr2 (4 d)]. The new [1]FCPs were fully characterized including single-crystal X-ray analysis. The stabilizing iPr groups on the Cp rings increase the thermal stabilities of 4 b-d compared to known [1]FCPs, equipped with the same bridging moieties. All three compounds 4 b-d are volatile and could be isolated by vacuum sublimation. Our new approach to [1]FCPs has the potential to overcome many of the existing difficulties in ferrocenophane chemistry, such as limited stability of starting monomers and low solubilities of resulting polyferrocenes.

  10. Silicon carbide-silicon composite having improved oxidation resistance and method of making

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    1999-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  11. Method of making silicon carbide-silicon composite having improved oxidation resistance

    NASA Technical Reports Server (NTRS)

    Luthra, Krishan Lal (Inventor); Wang, Hongyu (Inventor)

    2002-01-01

    A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

  12. Fit of fluxes of sunscreens and other compounds from propylene glycol:water (30:70) through human skin and silicone membrane to the Roberts-Sloan equation: the effect of polar vehicle (or water) solubility.

    PubMed

    Sloan, Kenneth B; Devarajan-Ketha, Hemamalini; Synovec, Jennifer; Majumdar, Susruta

    2013-01-01

    It would be useful to develop a surrogate for animal skin, which could be use to predict flux through human skin. The fluxes (and physicochemical properties) of sunscreens and other compounds from propylene glycol (PG):water (AQ), 30:70, through human skin have previously been reported. We measured the fluxes of several of those sunscreens and other compounds from PG:AQ, 30:70, through silicone membrane and fit both sets of data to the Roberts-Sloan (RS) equation to determine any similarities. For both sets of data, the fluxes were directly dependent on their solubilities in a lipid solvent [octanol (OCT), in this case] and in a polar solvent (PG:AQ, 30:70, or AQ in this case) and inversely on their molecular weights. The fit of the experimental (EXP) fluxes through human skin in vivo to RS was excellent: r² = 0.92 if the vehicle (VEH) PG:AQ, 30:70 was the polar solvent (RS¹) or r² = 0.97 if water was the polar solvent (RS²). The fit of the EXP fluxes through silicone membrane to RS was good: r² = 0.80 if the VEH PG:AQ, 30:70, was the polar solvent (RS¹) or r² = 0.81 if water was the polar solvent (RS²). The correlations between their EXP fluxes through human skin in vivo and their EXP fluxes through silicone membrane were good (r² = 0.85). In addition, the correlation between EXP fluxes from PG:AQ, 30:70, through human skin in vivo and their fluxes calculated from the coefficients of the fit of solubilities, molecular weights and fluxes from water through silicone membranes from a previous n = 22 database to RS was even better (r² = 0.94). These results suggest that flux through human skin can be calculated from flux through a silicone membrane.

  13. Chemistry of silicon-containing compounds and molecular approaches to materials for silicon-based microelectronics. Preparation of metal silyl complexes, studies of reactions between alkylidenes and silanes, and deposition of titanium oxide thin films

    NASA Astrophysics Data System (ADS)

    Blanton, Jaime Renee

    This dissertation describes studies of the chemistry of silicon-containing compounds and molecular approaches to silicon-based microelectronic materials. The preparation of new silyl dianions and transition metal silyl complexes, studies of the mechanism of reactions between alkylidenes and silanes, and fabrication of TiO2 thin films on Si as microelectronic gate materials are presented. Chapter 1 provides a brief overview of the field of early transition metal silyl chemistry, experimental techniques used in the research, and a summary of research conducted in each subsequent chapter. Chapter 2 describes the synthesis and characterization of new silyl dianions of the type [K(18-crown-6)] 2[(Me3Si)2Si-(CH2)n-Si(SiMe 3)2] (n = 1, 4; 2, 5; 3, 6). These represent some of the few known disilyl dianions. Crystal structures of the starting materials to 5 and 6, (Me3Si)3Si-(CH2)n-Si(SiMe 3)3, (n = 2, 2; 3, 3) were determined by X-ray diffraction studies. The preparation and characterization of novel Zr and Zn silyl complexes from the reactions of 5 with (Me 2N)3ZrCl and ZnCl2, respectively, are presented in Chapter 3. Both complexes are anionic with K(18-crown-6)+ counterions. {(Me2N)3Zr[eta2-(Me 3Si)2Si(CH2)2Si(SiMe3) 2]}- (7) consists of a five-coordinate Zr center. [K(18-crown-6)]2{[eta2-(Me3Si) 2Si(CH2)2Si(SiMe3)2]Zn 2[mu-(Me3Si)2Si(CH2)2-Si(SiMe 3)2]} (8) is the first trisilyl Zn complex. 8 is a dimer with each Zn metal center coordinated by a chelating and a bridging disilyl ligand. Chapter 4 presents new mechanistic insights into the reactions of a Ta alkylidene complex (Me3SiCH2) 3Ta(PMe3)[=CHSiMe3] (9) with H 2SiMePh. Such reactions yielded new silyl-substituted alkylidene complexes. Experiments conducted in the presence of 20-fold PMe3 were 19 times slower than those conducted with no added phosphine. Mass spectral analysis of the gaseous products from the reaction conducted in the presence of H 2 suggested hydrogen scrambling. Finally, Chapter 5 discusses the

  14. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  15. Silicone metalization

    SciTech Connect

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  16. K- and L-edge X-ray absorption spectrum calculations of closed-shell carbon, silicon, germanium, and sulfur compounds using damped four-component density functional response theory.

    PubMed

    Fransson, Thomas; Burdakova, Daria; Norman, Patrick

    2016-05-21

    X-ray absorption spectra of carbon, silicon, germanium, and sulfur compounds have been investigated by means of damped four-component density functional response theory. It is demonstrated that a reliable description of relativistic effects is obtained at both K- and L-edges. Notably, an excellent agreement with experimental results is obtained for L2,3-spectra-with spin-orbit effects well accounted for-also in cases when the experimental intensity ratio deviates from the statistical one of 2 : 1. The theoretical results are consistent with calculations using standard response theory as well as recently reported real-time propagation methods in time-dependent density functional theory, and the virtues of different approaches are discussed. As compared to silane and silicon tetrachloride, an anomalous error in the absolute energy is reported for the L2,3-spectrum of silicon tetrafluoride, amounting to an additional spectral shift of ∼1 eV. This anomaly is also observed for other exchange-correlation functionals, but it is seen neither at other silicon edges nor at the carbon K-edge of fluorine derivatives of ethene. Considering the series of molecules SiH4-XFX with X = 1, 2, 3, 4, a gradual divergence from interpolated experimental ionization potentials is observed at the level of Kohn-Sham density functional theory (DFT), and to a smaller extent with the use of Hartree-Fock. This anomalous error is thus attributed partly to difficulties in correctly emulating the electronic structure effects imposed by the very electronegative fluorines, and partly due to inconsistencies in the spurious electron self-repulsion in DFT. Substitution with one, or possibly two, fluorine atoms is estimated to yield small enough errors to allow for reliable interpretations and predictions of L2,3-spectra of more complex and extended silicon-based systems.

  17. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  18. Use of silicon in liquid sintered silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  19. Microstructure of SiC-Si-Al2O3 composites derived from silicone resin - metal aluminum filler compounds by low temperature reduction process

    NASA Astrophysics Data System (ADS)

    Narisawa, M.; Abe, Y.

    2011-06-01

    Concentrated slurry of a silicone resin with low carbon content, 3 μm aluminum particles and ethanol were prepared. After casting, addition of cross-linking agent and drying, silicone resin-aluminum composite with thick sheet form was obtained. The prepared sheet was heat-treated at 933 or 1073K with various holding times to characterize formed phases during the heat treatments. XRD patterns and FT-IR spectra revealed free Si formation and existence of Si-O-Si bond at 933K. The Si-O-Si bond, however, disappeared and silicon carbide was formed at 1073K. SEM observation indicated formation of cracks bridged with a number of tiny struts at 933K and conversion to wholly porous structure at 1073K.

  20. Gram level synthesis of lead-free solder in the nanometer length scale obtained from tin and silver compounds using silicone oil.

    PubMed

    Pande, Surojit; Sarkar, Achintya Kumar; Basu, Mrinmoyee; Jana, Subhra; Sinha, Arun Kumar; Sarkar, Sougata; Pradhan, Mukul; Saha, Sandip; Pal, Anjali; Pal, Tarasankar

    2008-08-19

    A straightforward route to gram level synthesis of a pure phase of the Sn-Ag nanoalloy in an eutectic composition (Sn/Ag 96.5:3.5) in silicone oil is reported. The composition, morphology, and microstructure of the alloy were fully characterized. In a mixture of ethylene glycol and silicone oil, direct reduction of Sn(II) acetate and Ag(I) nitrate gave the Sn-Ag nanoalloy. The nanoalloy disintegrates by sonication and reforms by heating, leading to smaller particles with a melting point as low as 128 degrees C.

  1. High-pressure synthesis and structural characterization of the type II clathrate compound Na(30.5)Si(136) encapsulating two sodium atoms in the same silicon polyhedral cages.

    PubMed

    Yamanaka, Shoji; Komatsu, Masaya; Tanaka, Masashi; Sawa, Hiroshi; Inumaru, Kei

    2014-05-28

    Single crystals of sodium containing silicon clathrate compounds Na8Si46 (type I) and NaxSi136 (type II) were prepared from the mixtures of NaSi and Si under high-pressure and high-temperature conditions of 5 GPa at 600-1000 °C. The type II crystals were obtained at relatively low-temperature conditions of 700-800 °C, which were found to have a Na excess composition Na30.5Si136 in comparison with the compounds NaxSi136 (x ≤ 24) obtained by a thermal decomposition of NaSi under vacuum. The single crystal study revealed that the Na excess type II compound crystallizes in space group Fd3̅m with a lattice parameter of a = 14.796(1) Å, slightly larger than that of the ambient phase (Na24Si136), and the large silicon hexakaidecahedral cages (@Si28) are occupied by two sodium atoms disordered in the two 32e sites around the center of the @Si28 cages. At temperatures <90 K, the crystal symmetry of the compound changes from the face-centered to the primitive cell with space group P213, and the Na atoms in the @Si28 cages are aligned as Na2 pairs. The temperature dependence of the magnetic susceptibility of Na30.5Si136 suggests that the two Na ions (2 Na(+)) in the cage are changed to a Na2 molecule. The Na atoms of Na30.5Si136 can be deintercalated from the cages topochemically by evacuation at elevated temperatures. The single crystal study of the deintercalated phases NaxSi136 (x = 25.5 and 5.5) revealed that only excess Na atoms have disordered arrangements.

  2. Silicon based materials for drug delivery devices and implants.

    PubMed

    Bernik, Delia L

    2007-01-01

    This patent review focuses on silicon based materials for drug delivery systems and implant devices devoted to medical applications. The article describes some representative examples of the most depictive silicon based compounds associated with drug release formulations and tissue engineering biomaterials. Ranging from inorganic to organic and hybrid inorganic-organic silicon compounds, the paper referrers to patents describing inventions which make use of the best properties of silicon dioxide, silica aerogel and xerogel, silicon bioactive materials, silicones and ormosils, pointing out the usefulness of each kind of compound within the invention embodiment.

  3. Replacement of silicone polymer A with silicone polymer B and the subsequent characterization of the new cellular silicone materials

    SciTech Connect

    Schneider, J.W.

    1994-04-01

    The purpose of this project is to replace silicone polymer A with silicone polymer B produced by Vendor B. Silicone polymer B and the resulting B-50 cellular silicone have been used to produce cushions for the W87 program. Approximately 5.5 years of stress relaxation aging study data as well as actual part surveillance data have been collected, characterizing the stockpile life performance of the B-50 cellular silicone cushion material. Process characterization of new cellular silicone materials as a result of replacing silicone polymer A with silicone polymer B has been completed. Load deflection requirements for the new cellular silicone materials based on silicone polymer B have been met. The silicone polymer B based cellular silicone materials must be compounded at densities of approximately 0.03 g/cm{sup 3} less than the silicone polymer A based cellular silicone materials in order to achieve the same load deflection requirements has also been demonstrated. The change in silicone polymers from A to B involved a decrease in volatile content as well as a decrease in part shrinkage.

  4. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  5. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, K.

    1994-12-27

    An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

  6. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOEpatents

    Natesan, Ken

    1994-01-01

    An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

  7. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOEpatents

    Yunker, Wayne H.; Christiansen, David W.

    1987-05-05

    A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  8. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOEpatents

    Yunker, Wayne H.; Christiansen, David W.

    1987-01-01

    A method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  9. Polarity-indicative two-dimensional periodic relief gratings of tethered poly(methyl methacrylate) on silicon surfaces for visualization in volatile organic compound sensing

    NASA Astrophysics Data System (ADS)

    Chen, Jem-Kun; Wang, Jing-Hong; Cheng, Chih-Chia; Chang, Jia-Yaw; Chang, Feng-Chih

    2013-04-01

    We grafted poly(methyl methacrylate) (PMMA) from a 200 nm-resolution hole array of photoresist on a silicon substrate as a pillar array of two-dimensional periodic relief grating (2DPRG). The resulting 2DPRGs have been used as detectors of organic solvents in surrounding media, based upon structure change of the 2DPRG as a consequence of the solvent induced reversible swelling-deswelling of PMMA chains, through effective refractive index. Dramatic colors change, purple, green, yellow, and red, was observed by naked eyes along an incident angle of 60°-70° as the surrounding media of PMMA-modified 2DPRG was acetone, tetrahydrofuran, dioxane, and chloroform, respectively.

  10. Silicon-Containing GABA Derivatives, Silagaba Compounds, as Orally Effective Agents for Treating Neuropathic Pain without Central-Nervous-System-Related Side Effects

    PubMed Central

    2014-01-01

    Neuropathic pain is a chronic condition resulting from neuronal damage. Pregabalin, the (S)-isomer of 3-isobutyl-γ-aminobutyric acid (GABA), is widely used to treat neuropathic pain, despite the occurrence of central nervous system (CNS)-related side effects such as dizziness and somnolence. Here we describe the pharmacology of novel GABA derivatives containing silicon–carbon bonds, silagaba compounds. Silagaba131, 132, and 161 showed pregabalin-like analgesic activities in animal models of neuropathic pain, but in contrast to pregabalin they did not impair neuromuscular coordination in rotarod tests. Pharmacokinetic studies showed that brain exposure to silagaba compounds was lower than that to pregabalin. Surprisingly, despite their potent analgesic action in vivo, silagaba compounds showed only weak binding to α2-δ protein. These compounds may be useful to study mechanisms of neuropathic pain. Our results also indicate that silagaba132 and 161 are candidates for orally effective treatment of neuropathic pain without CNS-related side effects. PMID:24738473

  11. Silicon spintronics.

    PubMed

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  12. Syntheses and studies of organosilicon compounds

    SciTech Connect

    Xie, Ren

    1999-02-12

    The syntheses of polycarbosilanes and polysilanes as silicon carbide ceramic precursors have been active research areas in the Barton Research Group. In this thesis, the work is focused on the preparation of polycarbosilanes and polysilanes as stoichiometric silicon carbide precursor polymers. The syntheses of the precursor polymers are discussed and the conversions of these precursors to silicon carbide via pyrolysis are reported. The XRD pattern and elemental analyses of the resulting silicon carbide ceramics are presented. Silicon monoxide is an important intermediate in the production of silicon metal. The existence of silicon monoxide in gap phase has been widely accepted. In the second part of this thesis, the generation of gaseous silicon monoxide in four different reactors and the reactions of gaseous silicon monoxide towards organic compounds are discussed.

  13. Silicon nitride/silicon carbide composite powders

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-06-11

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  14. Reactions Between Vapor Phase Lead Compounds and In Situ Generated Silica Particles at Various Lead-Silicon Feed Ratios: Applications to Toxic Metal Capture in Combustors.

    PubMed

    Owens, Timothy M; Biswas, Pratim

    1996-06-01

    A detailed characterization was performed of the particles produced under various Pb:Si molar feed ratios for a maximum flow reactor temperature of 1000 °C. The silica particles formed in the high temperature region coagulated and only partially coalesced to form large agglomerate structures of high specific surface area. For a lead-only feed, the resulting particles were hydrocerussite with small but detectable amounts of massicot. As the silica precursor was inlet in excess amounts (Pb:Si < 1:12, the crystalline lead compounds disappeared and amorphous lead-silica complexes dominated. The particle morphology also changed from cylindrical, polygonal, and spherical shapes to large agglomerate structures composed of several size modes of primary particles. At Pb:Si molar feed ratios of 1:12 and 1:29, the particles making up the chainlike agglomerate structure were primarily spherical, with larger lead silicate spherical particles (=0.5 |im) attached to the agglomerate. The lead was found to be distributed throughout the large agglomerate structures, implying easier capture of lead emissions in particulate control devices.

  15. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Astrophysics Data System (ADS)

    Agosto, William N.

    1993-03-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  16. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    NASA Technical Reports Server (NTRS)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  17. ANALYSIS OF ORGANOSILICON COMPOUNDS IV SEPARATION AND DETERMINATION OF METHYLVINYL-CHLOROSILANES AND VINYLCHLOROSILANES BY GAS CHROMOTOGRAPHY (ANALYSE VON ORGANOSILICIUM-VERBINDUNGEN IV. TRENNUNG UND BESTEMMUNG VON METHYLVINYLCHLORSILANEN UND VINYLCHLORSILANEN MITTELS),

    DTIC Science & Technology

    GAS CHROMATOGRAPHY), (*SILICON COMPOUNDS, SEPARATION, ORGANIC COMPOUNDS, SILANES, CHEMICAL ANALYSIS, THERMAL CONDUCTIVITY, NITROGEN, RECORDING SYSTEMS, IDENTIFICATION, VOLUMETRIC ANALYSIS, DISTILLATION, CZECHOSLOVAKIA.

  18. Exploring the Nature of Silicon-Noble Gas Bonds in H3SiNgNSi and HSiNgNSi Compounds (Ng = Xe, Rn)

    PubMed Central

    Pan, Sudip; Saha, Ranajit; Chattaraj, Pratim K.

    2015-01-01

    Ab initio and density functional theory-based computations are performed to investigate the structure and stability of H3SiNgNSi and HSiNgNSi compounds (Ng = Xe, Rn). They are thermochemically unstable with respect to the dissociation channel producing Ng and H3SiNSi or HSiNSi. However, they are kinetically stable with respect to this dissociation channel having activation free energy barriers of 19.3 and 23.3 kcal/mol for H3SiXeNSi and H3SiRnNSi, respectively, and 9.2 and 12.8 kcal/mol for HSiXeNSi and HSiRnNSi, respectively. The rest of the possible dissociation channels are endergonic in nature at room temperature for Rn analogues. However, one three-body dissociation channel for H3SiXeNSi and one two-body and one three-body dissociation channels for HSiXeNSi are slightly exergonic in nature at room temperature. They become endergonic at slightly lower temperature. The nature of bonding between Ng and Si/N is analyzed by natural bond order, electron density and energy decomposition analyses. Natural population analysis indicates that they could be best represented as (H3SiNg)+(NSi)− and (HSiNg)+(NSi)−. Energy decomposition analysis further reveals that the contribution from the orbital term (ΔEorb) is dominant (ca. 67%–75%) towards the total attraction energy associated with the Si-Ng bond, whereas the electrostatic term (ΔEelstat) contributes the maximum (ca. 66%–68%) for the same in the Ng–N bond, implying the covalent nature of the former bond and the ionic nature of the latter. PMID:25809612

  19. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, Rishi; Baik, Sunggi

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  20. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOEpatents

    Raj, R.; Baik, S.

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  1. Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

    NASA Technical Reports Server (NTRS)

    Kuramoto, N.; Takiguchi, H.

    1984-01-01

    The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

  2. An in-situ assessment of low-density polyethylene and silicone rubber passive samplers using methods with and without performance reference compounds in the context of investigation of polychlorinated biphenyl sources in rivers.

    PubMed

    Estoppey, Nicolas; Schopfer, Adrien; Fong, Camille; Delémont, Olivier; De Alencastro, Luiz F; Esseiva, Pierre

    2016-12-01

    This study firstly aims to assess the field performances of low density polyethylene (LDPE) and silicone rubber (SR) samplers for the monitoring of polychlorinated biphenyls (PCBs) in water regarding the uptake, the sampling rate (RS) estimated by using performance reference compounds (PRCs) and the time-weighted average (TWA) concentrations. The second aim is to evaluate the efficiency of these samplers to investigate PCB sources (localization and imputation steps) using methods with and without PRCs to correct for the impact of water velocity on the uptake. Samplers spiked with PRCs were deployed in the outfalls of two PCB sources and at 8 river sites situated upstream and downstream of the outfalls. After 6weeks, the uptake of PCBs in the linear phase was equivalent in LDPE and SR but 5 times lower in LDPE for PCBs approaching equilibrium. PRC-based RS and water velocity (0.08 to 1.21ms(-1)) were well correlated in river (LDPE: R(2)=0.91, SR: R(2)=0.96) but not in outfalls (higher turbulences and potential release of PRCs to air). TWA concentrations obtained with SR were slightly higher than those obtained with LDPE (factor 1.4 to 2.6 in river) likely because of uncertainty in sampler-water partition coefficient values. Concentrations obtained through filtration and extraction of water samples (203L) were 1.6 and 5.1 times higher than TWA concentrations obtained with SR and LDPE samplers, respectively. PCB sources could efficiently be localized when PRCs were used (increases of PCB loads in river) but the impact of high differences of water velocity was overcorrected (leading sometimes to false positives and negatives). Increases of PCB loads in the river could not be entirely imputed to the investigated sources (underestimation of PCBs contributing to the load increases). A method without PRCs (relationship between uptake and water velocity) appeared to be a good complementary method for LDPE.

  3. Effect of water velocity on the uptake of polychlorinated biphenyls (PCBs) by silicone rubber (SR) and low-density polyethylene (LDPE) passive samplers: an assessment of the efficiency of performance reference compounds (PRCs) in river-like flow conditions.

    PubMed

    Estoppey, Nicolas; Schopfer, Adrien; Omlin, Julien; Esseiva, Pierre; Vermeirssen, Etiënne L M; Delémont, Olivier; De Alencastro, Luiz F

    2014-11-15

    One aim of this study is to determine the impact of water velocity on the uptake of indicator polychlorinated biphenyls (iPCBs) by silicone rubber (SR) and low-density polyethylene (LDPE) passive samplers. A second aim is to assess the efficiency of performance reference compounds (PRCs) to correct for the impact of water velocity. SR and LDPE samplers were spiked with 11 or 12 PRCs and exposed for 6 weeks to four different velocities (in the range of 1.6 to 37.7 cm s(-1)) in river-like flow conditions using a channel system supplied with river water. A relationship between velocity and the uptake was found for each iPCB and enables to determine expected changes in the uptake due to velocity variations. For both samplers, velocity increases from 2 to 10 cm s(-1), 30 cm s(-1) (interpolated data) and 100 cm s(-1) (extrapolated data) lead to increases of the uptake which do not exceed a factor of 2, 3 and 4.5, respectively. Results also showed that the influence of velocity decreased with increasing the octanol-water coefficient partition (log K(ow)) of iPCBs when SR is used whereas the opposite effect was observed for LDPE. Time-weighted average (TWA) concentrations of iPCBs in water were calculated from iPCB uptake and PRC release. These calculations were performed using either a single PRC or all the PRCs. The efficiency of PRCs to correct the impact of velocity was assessed by comparing the TWA concentrations obtained at the four tested velocities. For SR, a good agreement was found among the four TWA concentrations with both methods (average RSD<10%). Also for LDPE, PRCs offered a good correction of the impact of water velocity (average RSD of about 10 to 20%). These results contribute to the process of acceptance of passive sampling in routine regulatory monitoring programs.

  4. Silicon microdosimetry.

    PubMed

    Agosteo, Stefano; Pola, Andrea

    2011-02-01

    Silicon detectors are being studied as microdosemeters since they can provide sensitive volumes of micrometric dimensions. They can be applied for assessing single-event effects in electronic instrumentation exposed to complex fields around high-energy accelerators or in space missions. When coupled to tissue-equivalent converters, they can be used for measuring the quality of radiation therapy beams or for dosimetry. The use of micrometric volumes avoids the contribution of wall effects to the measured spectra. Further advantages of such detectors are their compactness, cheapness, transportability and a low sensitivity to vibrations. The following problems need to be solved when silicon devices are used for microdosimetry: (i) the sensitive volume has to be confined in a region of well-known dimensions; (ii) the electric noise limits the minimum detectable energy; (iii) corrections for tissue-equivalency should be made; (iv) corrections for shape equivalency should be made when referring to a spherical simulated site of tissue; (v) the angular response should be evaluated carefully; (vi) the efficiency of a single detector of micrometric dimensions is very poor and detector arrays should be considered. Several devices have been proposed as silicon microdosemeters, based on different technologies (telescope detectors, silicon on insulator detectors and arrays of cylindrical p-n junctions with internal amplification), in order to satisfy the issues mentioned above.

  5. Exceptional Optoelectronic Properties of Si-related compounds

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Zhuang, Houlong; Yoon, Mina; Wei, Su-Huai; Sumpter, Bobby

    2015-03-01

    The search of new silicon-related functional compounds are of great interests but still very changeling. In the last few decades, researchers have heavily studied the structural and electronic properties of silicon in order to improve its optical absorption in the visible light range using analyses of metastable silicon phases, silicon-based alloys, and silicon-based superlattices. In this talk, I will present our recent theoretical efforts on searching and designing new silicon phases, from bulk to two-dimensional (2D) silicon, with exceptional optoelectronic properties. Especially, we find that chemically functionalized 2D silicon and silicon alloys could be the best candidates to create efficient thin-film solar absorbers and silicon-based, white-light-emitting diodes, paving the way for new ``green'' energy applications.

  6. Quantitation of buried contamination by use of solvents. [degradation of silicone polymers by amine solvents

    NASA Technical Reports Server (NTRS)

    Pappas, S. P.; Hsiao, Y. C.; Hill, L. W.

    1973-01-01

    Spore recovery form cured silicone potting compounds using amine solvents to degrade the cured polymers was investigated. A complete list of solvents and a description of the effect of each on two different silicone polymers is provided.

  7. A general classification of silicon utilizing organisms

    NASA Astrophysics Data System (ADS)

    Das, P.; Das, S.

    2010-12-01

    Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

  8. Method of and apparatus for removing silicon from a high temperature sodium coolant

    DOEpatents

    Yunker, W.H.; Christiansen, D.W.

    1983-11-25

    This patent discloses a method of and system for removing silicon from a high temperature liquid sodium coolant system for a nuclear reactor. The sodium is cooled to a temperature below the silicon saturation temperature and retained at such reduced temperature while inducing high turbulence into the sodium flow for promoting precipitation of silicon compounds and ultimate separation of silicon compound particles from the liquid sodium.

  9. Organosilicon Compounds and Polymers and Silicon Ceramics

    DTIC Science & Technology

    1992-11-23

    X Congreso Nacional de la Academia Mexicana de Quimica Inorganica (Zacatecas, Mexico; invited speaker) Institute of Materials Science, University of...Central Research and Development Department, du Pont (Wilmington, DE) Alcoa Technical Center XIX Congreso Latinoamericano de Quimica (Buenos Aires

  10. Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, Hartmut

    2014-03-01

    The use of silicon detectors has experienced an exponential growth in accelerator and space based experiments, similar to trends in the semiconductor industry as a whole, usually paraphrased as ``Moore's Law.'' Some of the essentials for this phenomenon will be presented, together with examples of the exciting science results which it enabled. With the establishment of a ``semiconductor culture'' in universities and laboratories around the world, an increased understanding of the sensors results in thinner, faster, more radiation-resistant detectors, spawning an amazing wealth of new technologies and applications, which will be the main subject of the presentation.

  11. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    NASA Technical Reports Server (NTRS)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  12. Highly crosslinked silicon polymers for gas chromatography columns

    NASA Technical Reports Server (NTRS)

    Shen, Thomas C. (Inventor)

    1994-01-01

    A new highly crosslinked silicone polymer particle for gas chromatography application and a process for synthesizing such copolymer are described. The new copolymer comprises vinyltriethoxysilane and octadecyltrichlorosilane. The copolymer has a high degree of crosslinking and a cool balance of polar to nonpolar sites in the porous silicon polymer assuring fast separation of compounds of variable polarity.

  13. Silicon carbide

    SciTech Connect

    Ault, N.N.; Crowe, J.T. )

    1991-05-01

    This paper reports that, since silicon carbide (SiC) does not occur in nature, it must be synthesized by a high-temperature chemical reaction. The first commercial production began at the end of the 19th century when Acheson developed a process of reacting sand and coke in a resistance furnace. This process is still the basic SiC manufacturing process used today. High-quality silica sand (99.5% SiO{sub 2}), low-sulfur petroleum coke, and electricity (23.8 MJ/kg) are the major ingredients in the production of SiC. The reaction takes place in a trough-like furnace with a removable refractory side (or some similar configuration) and with permanent refractory ends holding carbon electrodes. When the furnace is started, the carbon electrodes are joined by the graphite core laid the length of the furnace near the center of the mixture which fills the furnace.

  14. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  15. Metalloid compounds as drugs

    PubMed Central

    Sekhon, B. S.

    2013-01-01

    The six elements commonly known as metalloids are boron, silicon, germanium, arsenic, antimony, and tellurium. Metalloid containing compounds have been used as antiprotozoal drugs. Boron-based drugs, the benzoxaboroles have been exploited as potential treatments for neglected tropical diseases. Arsenic has been used as a medicinal agent and arsphenamine was the main drug used to treat syphilis. Arsenic trioxide has been approved for the treatment of acute promyelocytic leukemia. Pentavalent antimonials have been the recommended drug for visceral leishmaniasis and cutaneous leishmaniasis. Tellurium (IV) compounds may have important roles in thiol redox biological activity in the human body, and ammonium trichloro (dioxoethylene-O, O’-)tellurate (AS101) may be a promising agent for the treatment of Parkinson’s disease. Organosilicon compounds have been shown to be effective in vitro multidrug-resistance reverting agents. PMID:24019824

  16. Buried oxide layer in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  17. Neutron absorbing room temperature vulcanizable silicone rubber compositions

    DOEpatents

    Zoch, Harold L.

    1979-11-27

    A neutron absorbing composition comprising a one-component room temperature vulcanizable silicone rubber composition or a two-component room temperature vulcanizable silicone rubber composition in which the composition contains from 25 to 300 parts by weight based on the base silanol or vinyl containing diorganopolysiloxane polymer of a boron compound or boron powder as the neutron absorbing ingredient. An especially useful boron compound in this application is boron carbide.

  18. Purified silicon production system

    DOEpatents

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  19. Preparation and characterization of silicone rubber/functionalized carbon nanotubes composites via in situ polymerization.

    PubMed

    Kim, Hun-Sik; Kwon, Soon-Min; Lee, Kwang Hee; Yoon, Jin-San; Jin, Hyoung-Joon

    2008-10-01

    The dispersion of the nanometer-sized multiwalled carbon nanotubes (MWCNTs) in a silicone matrix leads to a marked improvement in the properties of the silicone based composite. In this study, silicone rubber/MWCNTs nanocomposite was successfully prepared by functionalizing MWCNTs with silane compound. This allowed a homogeneous dispersion of functionalized MWCNTs in the silicone matrix. The morphology of functionalized MWCNTs was observed using transmission electron microscopy and scanning electron microscopy with energy dispersive spectrometer. The silicone rubber/functionalized MWCNTs (1 wt%) composites showed that the tensile strength and modulus of the composites improved dramatically by about 50% and 28%, respectively, compared with silicone rubber.

  20. Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

    NASA Technical Reports Server (NTRS)

    Ferguson, Frank T.; Nuth, Joseph A., III

    2012-01-01

    The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

  1. Silicon clathrates and carbon analogs: high pressure synthesis, structure, and superconductivity.

    PubMed

    Yamanaka, Shoji

    2010-02-28

    Compounds with cage-like structures of elemental silicon and carbon are comparatively reviewed. Barium containing silicon clathrate compounds isomorphous with type I gas hydrates were prepared using high pressure and high temperature (HPHT) conditions, and found to become superconductors. The application of HPHT conditions to Zintl binary silicides have produced a number of silicon-rich cage-like structures including new clathrate structures; most of them are superconductors. Carbon analogs of silicon clathrates can be prepared by 3D polymerization of C(60) under HPHT conditions, which are new allotropes of carbon with expanded framework structures. The crystal chemistry and characteristic properties of some related compounds are also reviewed.

  2. Breast Implants: Saline vs. Silicone

    MedlinePlus

    ... to women of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with ... likely be inserted at the same time. Ruptured silicone implant If a silicone breast implant ruptures, you ...

  3. Photophysical properties of luminescent silicon nanoparticles surface-modified with organic molecules via hydrosilylation.

    PubMed

    Miyano, Mari; Kitagawa, Yuichi; Wada, Satoshi; Kawashima, Akira; Nakajima, Ayako; Nakanishi, Takayuki; Ishioka, Junya; Shibayama, Tamaki; Watanabe, Seiichi; Hasegawa, Yasuchika

    2016-01-01

    Luminescent silicon nanoparticles have attracted considerable attention for their potential uses in various applications. Many approaches have been reported to protect the surface of silicon nanoparticles and prevent their easy oxidation. Various air-stable luminescent silicon nanoparticles have been successfully prepared. However, the effect of interactions of the π-electron system with the silicon surface on the excited state properties of silicon nanoparticles is unclear. In this study, we have successfully prepared silicon nanoparticles protected with three organic compounds (styrene, 1-decene, and 1-vinyl naphthalene) and have examined their photophysical properties. The ligand π-electron systems on the silicon surface promoted the light harvesting ability for the luminescence through a charge transfer transition between the protective molecules and silicon nanoparticles and also enhanced the radiative rate of the silicon nanoparticles.

  4. Double stabilization of nanocrystalline silicon: a bonus from solvent

    NASA Astrophysics Data System (ADS)

    Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A.

    2016-01-01

    Double stabilization of the silicon nanocrystals was observed for the first time by 29Si and 13C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C-O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

  5. High performance compound semiconductor SPAD arrays

    NASA Astrophysics Data System (ADS)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  6. Process for producing silicon

    DOEpatents

    Olson, Jerry M.; Carleton, Karen L.

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  7. Electrodeposition of molten silicon

    DOEpatents

    De Mattei, Robert C.; Elwell, Dennis; Feigelson, Robert S.

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  8. Efficient Silicon Reactor

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Hill, D. M.; Jewett, D. N.

    1983-01-01

    High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.

  9. Tunable, antibacterial activity of silicone polyether surfactants.

    PubMed

    Khan, Madiha F; Zepeda-Velazquez, Laura; Brook, Michael A

    2015-08-01

    Silicone surfactants are used in a variety of applications, however, limited data is available on the relationship between surfactant structure and biological activity. A series of seven nonionic, silicone polyether surfactants with known structures was tested for in vitro antibacterial activity against Escherichia coli BL21. The compounds varied in their hydrophobic head, comprised of branched silicone structures with 3-10 siloxane linkages and, in two cases, phenyl substitution, and hydrophilic tail of 8-44 poly(ethylene glycol) units. The surfactants were tested at three concentrations: below, at, and above their Critical Micelle Concentrations (CMC) against 5 concentrations of E. coli BL21 in a three-step assay comprised of a 14-24h turbidometric screen, a live-dead stain and viable colony counts. The bacterial concentration had little effect on antibacterial activity. For most of the surfactants, antibacterial activity was higher at concentrations above the CMC. Surfactants with smaller silicone head groups had as much as 4 times the bioactivity of surfactants with larger groups, with the smallest hydrophobe exhibiting potency equivalent to sodium dodecyl sulfate (SDS). Smaller PEG chains were similarly associated with higher potency. These data link lower micelle stability and enhanced permeability of smaller silicone head groups to antibacterial activity. The results demonstrate that simple manipulation of nonionic silicone polyether structure leads to significant changes in antibacterial activity.

  10. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  11. Liquid phase sintering of silicon carbide

    DOEpatents

    Cutler, Raymond A.; Virkar, Anil V.; Hurford, Andrew C.

    1989-01-01

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1600.degree. C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase.

  12. Glass-silicon column

    DOEpatents

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  13. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M.

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  14. Photovoltaic applications of Compound Parabolic Concentrator (CPC)

    NASA Technical Reports Server (NTRS)

    Winston, R.

    1975-01-01

    The use of a compound parabolic concentrator as field collector, in conjunction with a primary focusing concentrator for photovoltaic applications is studied. The primary focusing concentrator can be a parabolic reflector, an array of Fresnel mirrors, a Fresnel lens or some other lens. Silicon solar cell grid structures are proposed that increase efficiency with concentration up to 10 suns. A ray tracing program has been developed to determine energy distribution at the exit of a compound parabolic concentrator. Projected total cost of a CPC/solar cell system will be between 4 and 5 times lower than for flat plate silicon cell arrays.

  15. TRIFLUOROMETHYL COMPOUNDS OF GERMANIUM

    DTIC Science & Technology

    FLUORIDES, *GERMANIUM COMPOUNDS, *HALIDES, *ORGANOMETALLIC COMPOUNDS, ALKYL RADICALS, ARSENIC COMPOUNDS, CHEMICAL BONDS, CHEMICAL REACTIONS ...CHLORIDES, CHLORINE COMPOUNDS, HYDROLYSIS, IODIDES, METHYL RADICALS, POTASSIUM COMPOUNDS, PYROLYSIS, STABILITY, SYNTHESIS, TIN COMPOUNDS.

  16. Nanocrystalline silicon/amorphous silicon dioxide superlattices

    SciTech Connect

    Fauchet, P.M.; Tsybeskov, L.; Zacharias, M. |; Hirschman, K. |

    1998-12-31

    Thin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) for form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thickness decreases (from 25 nm to 2.5 nm) or the a-SiO{sub 2} layer thickness increases (from 1.5 nm to 6 nm), the recrystallization temperature increases dramatically compared to that of a single a-Si film. The removal of the a-Si tissue present between the nanocrystals, the passivation of the nanocrystals, and their doping are discussed.

  17. Silicon germanium carbon heteroepitaxial growth on silicon

    NASA Astrophysics Data System (ADS)

    Mayer, James W.

    1993-10-01

    This project represents the initiation of band-gap engineering of Si-based devices at Arizona State University by James W. Mayer. While at Cornell, he directed the Microscience and Technology program supported by the Semiconductor Research Corporation. His Work on heteoepitaxy of SiGe on silicon convinced him that heteroepitaxy on Si was a viable technique for forming smaller band gap layers on silicon but the requirement was for larger energy-gap materials. In the fall of 1991, James Mayer visited Tom Picraux of Sandia National Laboratories and Clarence Tracy of Motorola Semiconductor Products to discuss the possibility of a joint program to investigate Silicon Germanium Carbon Heteroepitaxial Growth on Silicon. This represented a new research and development initiate for band gap engineering.

  18. Silicone Wristbands as Personal Passive Samplers

    PubMed Central

    2014-01-01

    Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual’s exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log Kow from −0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application. PMID:24548134

  19. Silicone wristbands as personal passive samplers.

    PubMed

    O'Connell, Steven G; Kincl, Laurel D; Anderson, Kim A

    2014-03-18

    Active-sampling approaches are commonly used for personal monitoring, but are limited by energy usage and data that may not represent an individual's exposure or bioavailable concentrations. Current passive techniques often involve extensive preparation, or are developed for only a small number of targeted compounds. In this work, we present a novel application for measuring bioavailable exposure with silicone wristbands as personal passive samplers. Laboratory methodology affecting precleaning, infusion, and extraction were developed from commercially available silicone, and chromatographic background interference was reduced after solvent cleanup with good extraction efficiency (>96%). After finalizing laboratory methods, 49 compounds were sequestered during an ambient deployment which encompassed a diverse set of compounds including polycyclic aromatic hydrocarbons (PAHs), consumer products, personal care products, pesticides, phthalates, and other industrial compounds ranging in log K(ow) from -0.07 (caffeine) to 9.49 (tris(2-ethylhexyl) phosphate). In two hot asphalt occupational settings, silicone personal samplers sequestered 25 PAHs during 8- and 40-h exposures, as well as 2 oxygenated-PAHs (benzofluorenone and fluorenone) suggesting temporal sensitivity over a single work day or week (p < 0.05, power =0.85). Additionally, the amount of PAH sequestered differed between worksites (p < 0.05, power = 0.99), suggesting spatial sensitivity using this novel application.

  20. Silicon on graphite cloth

    SciTech Connect

    Rand, J.A.; Cotter, J.E.; Thomas, C.J.; Ingram, A.E.; Bai, Y.B.; Ruffins, T.R.; Barnett, A.M.

    1994-12-31

    A new polycrystalline silicon solar cell has been developed that utilizes commercially available graphite cloth as a substrate. This solar cell has achieved an energy conversion efficiency of 13.4% (AM1.5G). It is believed that this is a record efficiency for a silicon solar cell formed on a graphite substrate. The silicon-on-fabric structure is comprised of a thin layer of polycrystalline silicon grown directly on the graphite fabric substrate. The structure is fabricated by a low-cost ribbon process that avoids the expense and waste of wafering. The fabric substrate gives structural support to the thin device. Critical to the achievement of device quality silicon layers is control over impurities in the graphite fabric. The silicon-on-fabric technology has the potential to supply lightweight, low-cost solar cells to weight-sensitive markets at a fraction of the cost of conventionally thinned wafers.

  1. Silicon micro-mold

    DOEpatents

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  2. Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface

    SciTech Connect

    Carlotti, J.-F.; Touboul, A.D.; Ramonda, M.; Caussanel, M.; Guasch, C.; Bonnet, J.; Gasiot, J.

    2006-01-23

    Thin silicon oxide layers on silicon substrates are investigated by scanning probe microscopy before and after irradiation with 210 MeV Au+ ions. After irradiation and complete chemical etching of the silicon oxide layer, silicon bumps grown on the silicon surface are observed. It is shown that each impinging ion induces one silicon bump at the interface. This observation is consistent with the thermal spike theory. Ion energy loss is transferred to the oxide and induces local melting. Silicon-bump formation is favored when the oxide and oxide-silicon interface are silicon rich.

  3. Silicone Contamination Camera for Developed for Shuttle Payloads

    NASA Technical Reports Server (NTRS)

    1996-01-01

    On many shuttle missions, silicone contamination from unknown sources from within or external to the shuttle payload bay has been a chronic problem plaguing experiment payloads. There is currently a wide range of silicone usage on the shuttle. Silicones are used to coat the shuttle tiles to enhance their ability to shed rain, and over 100 kg of RTV 560 silicone is used to seal white tiles to the shuttle surfaces. Silicones are also used in electronic components, potting compounds, and thermal control blankets. Efforts to date to identify and eliminate the sources of silicone contamination have not been highly successful and have created much controversy. To identify the sources of silicone contamination on the space shuttle, the NASA Lewis Research Center developed a contamination camera. This specially designed pinhole camera utilizes low-Earth-orbit atomic oxygen to develop a picture that identifies sources of silicone contamination on shuttle-launched payloads. The volatile silicone species travel through the aperture of the pinhole camera, and since volatile silicone species lose their hydrocarbon functionalities under atomic oxygen attack, the silicone adheres to the substrate as SiO_x. This glassy deposit should be spatially arranged in the image of the sources of silicone contamination. To view the contamination image, one can use ultrasensitive thickness measurement techniques, such as scanning variable-angle ellipsometry, to map the surface topography of the camera's substrate. The demonstration of a functional contamination camera would resolve the controversial debate concerning the amount and location of contamination sources, would allow corrective actions to be taken, and would demonstrate a useful tool for contamination documentation on future shuttle payloads, with near negligible effect on cost and weight.

  4. Laser-induced phase separation of silicon carbide.

    PubMed

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M; Im, James S; Ruoff, Rodney S; Choi, Sung-Yool; Lee, Keon Jae

    2016-11-30

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

  5. Laser-induced phase separation of silicon carbide

    PubMed Central

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-01-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

  6. Laser-induced phase separation of silicon carbide

    NASA Astrophysics Data System (ADS)

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-11-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (~2.5 nm) and polycrystalline silicon (~5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

  7. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    PubMed

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process.

  8. SILICON CARBIDE FOR SEMICONDUCTORS

    DTIC Science & Technology

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  9. Silicon Carbide Shapes.

    DTIC Science & Technology

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  10. Computer-assisted infrared spectra interpretation for amorphous silicon alloys

    NASA Astrophysics Data System (ADS)

    Kavak, Hamide; Esen, Ramazan

    2005-12-01

    A computer program for the structural interpretation of the infrared (IR) spectra is developed and tested. The interpretation of the IR spectra is made by using an hybrid system which includes library search and rule-based interpretation methods together. The computer programs were written in Pascal Codes. The prototype IR library of silicon alloys includes amorphous silicon (a-Si), amorphous silicon dioxide (a-SiOx), amorphous silicon nitride (a-Si3N4) and amorphous silicon carbide (a-SiC) references. The known spectra of these compounds were fed into the system as an unknown samples. The performance of the developed program was evaluated on a test set of 157 spectra and the percentages of successful identification ranged between 78% and 99% for different alloys.

  11. The CDFII Silicon Detector

    SciTech Connect

    Julia Thom

    2004-07-23

    The CDFII silicon detector consists of 8 layers of double-sided silicon micro-strip sensors totaling 722,432 readout channels, making it one of the largest silicon detectors in present use by an HEP experiment. After two years of data taking, we report on our experience operating the complex device. The performance of the CDFII silicon detector is presented and its impact on physics analyses is discussed. We have already observed measurable effects from radiation damage. These results and their impact on the expected lifetime of the detector are briefly reviewed.

  12. Micromachined silicon electrostatic chuck

    DOEpatents

    Anderson, Robert A.; Seager, Carleton H.

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  13. Micromachined silicon electrostatic chuck

    DOEpatents

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  14. Periodically poled silicon

    NASA Astrophysics Data System (ADS)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Jalali, Bahram

    2009-03-01

    We propose a new class of photonic devices based on periodic stress fields in silicon that enable second-order nonlinearity as well as quasi-phase matching. Periodically poled silicon (PePSi) adds the periodic poling capability to silicon photonics and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on second-order nonlinear effects. As an example of the utility of the PePSi technology, we present simulations showing that midwave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50%.

  15. Silicon web process development

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  16. SILICON METABOLISM IN DIATOMS

    PubMed Central

    Lewin, Joyce C.

    1954-01-01

    1. Cells of the fresh water diatom Navicula pelliculosa may be grown in a mineral medium containing a low concentration of silicon. When transferred to a fresh silicate solution and incubated under non-growing conditions such deficient cells rapidly take up silicon from the medium. 2. The utilization of silicon is an aerobic process. 3. When deficient cells are washed with distilled water or saline, their ability to utilize silicon is impaired whereas respiration is unaffected. 4. The ability of washed cells to take up silicon can be partially restored with sulfate or ascorbic acid, and is completely restored by Na2S, Na2S2O3, glutathione, l-cysteine, dl-methionine, or ascorbic acid plus sulfate. 5. The sulfhydryl reagent, CdCl2, inhibits silicon utilization of unwashed cells at concentrations which do not affect respiration. This inhibition similarly is reversed by glutathione or cysteine. 6. However, sodium iodoacetate or sodium arsenite inhibits respiration and silicon utilization at the same concentrations. 7. The silicon taken up by deficient cells is deposited at the cell surface as a thickening of the existing silica frustules. 8. Sulfhydryl groups in the cell membrane may be involved in silicon uptake by diatoms. PMID:13163359

  17. Carbonitriding of silicon using plasma focus device

    SciTech Connect

    Jabbar, S.; Khan, I. A.; Ahmad, R.; Zakaullah, M.; Pan, J. S.

    2009-03-15

    Carbonitride thin films have been deposited on silicon substrate by the irradiation of energetic nitrogen ions emanated from dense plasma focus device. The carbon ions are ablated by the irradiation of relativistic electrons from the insert material (graphite) placed at the anode tip. The x-ray diffraction analysis demonstrates that a polycrystalline thin film consisting of various compounds such as Si{sub 3}N{sub 4}, SiC, and C{sub 3}N{sub 4} is formed on the silicon (100) substrate. Crystallinity of different compounds decreases with the increase in angular positions (0 deg., 10 deg., and 20 deg. ). Raman spectroscopy shows the appearance of graphitic and disordered bands with silicon nitride and silicon carbide indicating the formation of carbonitride. Raman spectra also indicate that broadening of bands increases with the increase in focus deposition shots, leading to the amorphization of the thin film. The amorphization of the thin films depends on the ion energy flux as well as on the sample angular position. The scanning electron microscopy exhibits the damaging of the substrate surface at 0 deg. angular position. The microstructure shows the tubular shape for higher ion dose (40 focus shots). At 10 deg. angular position, a two phase phenomenon is observed with the ordered phase in the solid solution. A smooth and uniform surface morphology showing a small cluster is observed for the 20 deg. angular position.

  18. Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

    NASA Technical Reports Server (NTRS)

    Cohen, R. A.; Wheeler, R. K. (Inventor)

    1974-01-01

    A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

  19. The Electrochemical Fluorination of Organosilicon Compounds

    NASA Technical Reports Server (NTRS)

    Seaver, Robert E.

    1961-01-01

    The electrochemical fluorination of tetramethylsilane, hexamethyl-disiloxane, diethyldichlorosilane, amyltrichlorosilane, and phenyltri-chlorosilane was conducted in an Inconel cell equipped with nickel electrodes. A potential of approximately 5.0 volts and a current of approximately 1.0 ampere were used for the electrolysis reaction. In all cases the fluorinations resulted in considerable scission of the carbon-silicon bonds yielding hydrogen and the various fluorinated decomposition products; no fluoroorganosilicon compounds were identified. The main decomposition products were silicon tetrafluoride, the corresponding fluorinated carbon compounds, and the various organofluorosilanes. It is suggested that this is due to the nucleophilic attack of the fluoride ion (or complex fluoride ion) on the carbon-silicon bond.

  20. Improved Cure-in-Place Silicone Adhesives

    NASA Technical Reports Server (NTRS)

    Blevins, C. E.; Sweet, J.; Gonzalez, R.

    1982-01-01

    Two improved cure-in-place silicone-elastomer-based adhesives have low thermal expansion and low thermal conductivity. Adhesives are flexible at low temperature and withstand high temperatures without disintegrating. New ablative compounds were initially developed for in-flight repair of insulating tile on Space Shuttle orbiter. Could find use in other applications requiring high-performance adhesives, such as sealants for solar collectors.

  1. Silicone-Rubber Tooling for Hollow Panels

    NASA Technical Reports Server (NTRS)

    Gallimore, F. H.

    1985-01-01

    Wave-free contour surface obtained by using flexible mold. Silicone-rubber layup tool, when used in conjunction with hard plastic laminating mold defining desired contour, produces panel with wave-free surface that accurately reproduces shape of mold. In addition to providing porous hollow-panel wing structure that acts as duct for transporting sucked boundary layer tooling, also used to fabricate high-strength lightweight door panels and any single-or compound-contour panel.

  2. Cleaning up Silicon

    NASA Technical Reports Server (NTRS)

    2000-01-01

    A development program that started in 1975 between Union Carbide and JPL, led to Advanced Silicon Materials LLC's, formerly ASiMI, commercial process for producing silane in viable quantities. The process was expanded to include the production of high-purity polysilicon for electronic devices. The technology came out of JPL's Low Cost Silicon Array Project.

  3. Silicon carbide ceramic production

    NASA Technical Reports Server (NTRS)

    Suzuki, K.; Shinohara, N.

    1984-01-01

    A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

  4. Nonlinear silicon photonics

    NASA Astrophysics Data System (ADS)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  5. Periodically poled silicon

    NASA Astrophysics Data System (ADS)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  6. Silicon Carbide Photoconductive Switches

    DTIC Science & Technology

    1994-09-01

    The optoelectronic properties of p-type 6-H silicon carbide (6H-SiC) have been investigated in an experiment that used lateral and vertical...and the bandgap was determined to be approximately 3.1 eV. 6H-SiC, Photoconductive, Photovoltaic, Absorption coefficient, Switch, Silicon carbide

  7. SILICON CARBIDE DATA SHEETS

    DTIC Science & Technology

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  8. Silicon Stokes terahertz laser

    SciTech Connect

    Pavlov, S. G.; Huebers, H.-W.; Hovenier, J. N.; Klaassen, T. O.; Carder, D. A.; Phillips, P. J.; Redlich, B.; Riemann, H.; Zhukavin, R. Kh.; Shastin, V. N.

    2007-04-10

    A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom.

  9. Silicones in medical electronics.

    PubMed

    Bruner, Stephen

    2008-01-01

    The use of silicones, although already extensive, is set to grow in medical electronics. Silicones used in medical device applications as tubing or moulded parts should also be considered for electronic applications in the same device. This article outlines the potential reduction in complexity that this solution offers. Benefits include eliminating negative materials interactions and avoiding bonding problems.

  10. Microgravity silicon zoning investigation

    NASA Technical Reports Server (NTRS)

    Kern, E. L.; Gill, G. L., Jr.

    1983-01-01

    A resistance heated zoner, suitable for early zoning experiments with silicon, was designed and put into operation. The initial power usage and size was designed for an shown to be compatible with payload carriers contemplated for the Shuttle. This equipment will be used in the definition and development of flight experiments and apparatus for float zoning silicon and other materials in microgravity.

  11. Silicone-containing composition

    DOEpatents

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  12. Intraventricular Silicone Oil

    PubMed Central

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe

    2016-01-01

    Abstract Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor. PMID:26735537

  13. Silicon Nanocrystal Laser

    SciTech Connect

    Yu, J

    2005-03-09

    The purpose of this feasibility study project was to attempt to demonstrate the silicon-nanocrystal-based laser. Such a silicon laser (made using conventional silicon-manufacturing technologies) would provide the crucial missing link that would enable a completely-silicon-based photonic system. We prepared thin layers of silicon nanocrystal material by ion-implanting Si in fused silica substrates, followed by a high temperature anneal process. These Si nanocrystals produced intense photoluminescence when optically pumped with ultraviolet light. Laser structures based on Fabry-Perot cavity and distributed feedback (DFB) designs were fabricated using the Si nanocrystals as the ''lasing'' medium. We optically pumped the samples with CW lasers at 413nm wavelength to quickly assess the feasibility of making lasers out of the Nanocrystal Si material and to verify the gain coefficients reported by other research groups.

  14. Reversible Cycling of Silicon and Silicon Alloys

    NASA Astrophysics Data System (ADS)

    Obrovac, Mark

    2012-02-01

    Lithium ion batteries typically use a graphite negative electrode. Silicon can store more lithium than any other element and has long been considered as an attractive replacement for graphite. The theoretical lithium storage capacity of silicon is nearly ten times higher than graphite volumetrically and three times higher gravimetrically. The equilibrium Si-Li binary system is well known. Completely new phase behaviors are observed at room temperature. This includes the formation of a new phase, Li15Si4, which is the highest lithium containing phase at room temperature [1]. The formation of Li15Si4 is accompanied by a 280 percent volume expansion of silicon. During de-alloying this phase contracts, forming amorphous silicon. The volume expansion of alloys can cause intra-particle fracture and inter-particle disconnection; leading to loss of cycle life. To overcome issues with volume expansion requires a detailed knowledge of Li-Si phase behavior, careful design of the composition and nanostructure of the alloy and the microstructure of the negative electrode [2]. In this presentation the phase behavior of the Li-Si system will be described. Using this knowledge alone, strategies can be developed so that silicon can be reversibly cycled in a battery hundreds of times. Further increases in energy density and efficiency can be gained by alloying silicon with other elements, while controlling microstructure [2]. Coupled with negative electrode design strategies, practical negative electrodes for lithium ion cells can be developed based on bulk materials, with significant energy density improvement over conventional electrodes. [4pt] [1] M.N. Obrovac and L.J. Krause, J. Electrochem. Soc., 154 (2007) A103. [0pt] [2] M.N. Obrovac, Leif Christensen, Dinh Ba Le, and J.R. Dahn, J. Electrochem. Soc., 154 (2007) A849

  15. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect

    Kovačević, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  16. Method for producing silicon nitride/silicon carbide composite

    DOEpatents

    Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

    1996-07-23

    Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

  17. Wet-chemical systems and methods for producing black silicon substrates

    DOEpatents

    Yost, Vernon; Yuan, Hao-Chih; Page, Matthew

    2015-05-19

    A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.

  18. Polybenzimidazole compounds

    DOEpatents

    Klaehn, John R [Idaho Falls, ID; Peterson, Eric S [Idaho Falls, ID; Orme, Christopher J [Shelley, ID; Jones, Michael G [Chubbuck, ID; Wertsching, Alan K [Idaho Falls, ID; Luther, Thomas A [Idaho Falls, ID; Trowbridge, Tammy L [Idaho Falls, ID

    2011-11-22

    A PBI compound includes imidazole nitrogens at least a portion of which are substituted with a moiety containing a carbonyl group, the substituted imidazole nitrogens being bonded to carbon of the carbonyl group. At least 85% of the nitrogens may be substituted. The carbonyl-containing moiety may include RCO--, where R is alkoxy or haloalkyl. The PBI compound may exhibit a first temperature marking an onset of weight loss corresponding to reversion of the substituted PBI that is less than a second temperature marking an onset of decomposition of an otherwise identical PBI compound without the substituted moiety. The PBI compound may be included in separatory media. A substituted PBI synthesis method may include providing a parent PBI in a less than 5 wt % solvent solution. Substituting may use more than 5 equivalents in relation to the imidazole nitrogens to be substituted.

  19. Polybenzimidazole compounds

    DOEpatents

    Klaehn, John R.; Peterson, Eric S.; Wertsching, Alan K.; Orme, Christopher J.; Luther, Thomas A.; Jones, Michael G.

    2010-08-10

    A PBI compound that includes imidazole nitrogens, at least a portion of which are substituted with an organic-inorganic hybrid moiety. At least 85% of the imidazole nitrogens may be substituted. The organic-inorganic hybrid moiety may be an organosilane moiety, for example, (R)Me.sub.2SiCH.sub.2--, where R is selected from among methyl, phenyl, vinyl, and allyl. The PBI compound may exhibit similar thermal properties in comparison to the unsubstituted PBI. The PBI compound may exhibit a solubility in an organic solvent greater than the solubility of the unsubstituted PBI. The PBI compound may be included in separatory media. A substituted PBI synthesis method may include providing a parent PBI in a less than 5 wt % solvent solution. Substituting may occur at about room temperature and/or at about atmospheric pressure. Substituting may use at least five equivalents in relation to the imidazole nitrogens to be substituted or, preferably, about fifteen equivalents.

  20. Process for purification of silicon

    NASA Technical Reports Server (NTRS)

    Rath, H. J.; Sirtl, E.; Pfeiffer, W.

    1981-01-01

    The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

  1. A Comprehensive Evaluation of the Performance and Materials Chemistry of a Sililcone-Based Replicating Compound

    SciTech Connect

    Kalan, Michael

    2014-05-01

    The objective of this project was to characterize the performance and chemistry of a siliconebased replicating compound. Some silicone replicating compounds are useful for critical inspection of surface features. Common applications are for examining micro-cracks, surface pitting, scratching, and other surface defects. Materials characterization techniques were used: FTIR, XPS, ToF-SIMS, AFM, and Confocal Microscopy to evaluate the replicating compound. These techniques allowed for the characterization and verification of the resolution capabilities and surface contamination that may be a result of using the compound. FTIR showed the compound is entirely made from silicone constituents. The AFM and Confocal Microscopy results showed the compound does accurately replicate the surface features to the claimed resolution. XPS and ToF-SIMS showed there is a silicone contaminant layer left behind when a cured replica is peeled off a surface. Attempts to clean off the contamination could not completely remove all silicone residues.

  2. Transformational silicon electronics.

    PubMed

    Rojas, Jhonathan Prieto; Torres Sevilla, Galo Andres; Ghoneim, Mohamed Tarek; Inayat, Salman Bin; Ahmed, Sally M; Hussain, Aftab Mustansir; Hussain, Muhammad Mustafa

    2014-02-25

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications.

  3. Process for making silicon

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  4. Hydrogen in amorphous silicon

    SciTech Connect

    Peercy, P. S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH/sub 1/) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon.

  5. In-situ formation of nanoparticles within a silicon-based matrix

    DOEpatents

    Thoma, Steven G.; Wilcoxon, Jess P.; Abrams, Billie L.

    2008-06-10

    A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

  6. Roadmap on silicon photonics

    NASA Astrophysics Data System (ADS)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  7. Trade-Offs between Silicon and Phenolic Defenses may Explain Enhanced Performance of Root Herbivores on Phenolic-Rich Plants.

    PubMed

    Frew, Adam; Powell, Jeff R; Sallam, Nader; Allsopp, Peter G; Johnson, Scott N

    2016-08-01

    Phenolic compounds play a role in plant defense against herbivores. For some herbivorous insects, particularly root herbivores, host plants with high phenolic concentrations promote insect performance and tissue consumption. This positive relationship between some insects and phenolics, however, could reflect a negative correlation with other plant defenses acting against insects. Silicon is an important element for plant growth and defense, particularly in grasses, as many grass species take up large amounts of silicon. Negative impact of a high silicon diet on insect herbivore performance has been reported aboveground, but is unreported for belowground herbivores. It has been hypothesized that some silicon accumulating plants exhibit a trade-off between carbon-based defense compounds, such as phenolics, and silicon-based defenses. Here, we investigated the impact of silicon concentrations and total phenolic concentrations in sugarcane roots on the performance of the root-feeding greyback canegrub (Dermolepida albohirtum). Canegrub performance was positively correlated with root phenolics, but negatively correlated with root silicon. We found a negative relationship in the roots between total phenolics and silicon concentrations. This suggests the positive impact of phenolic compounds on some insects may be the effect of lower concentrations of silicon compounds in plant tissue. This is the first demonstration of plant silicon negatively affecting a belowground herbivore.

  8. Porous silicon gettering

    SciTech Connect

    Tsuo, Y.S.; Menna, P.; Pitts, J.R.

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  9. Recrystallization of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  10. Advanced silicon on insulator technology

    NASA Technical Reports Server (NTRS)

    Godbey, D.; Hughes, H.; Kub, F.

    1991-01-01

    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  11. Structural and magnetic properties of 2:17-type rare-earth transition-metal magnetic compounds samarium(2)iron(17)M(x) (M = aluminum, silicon) and R(2)iron(17-x)T(x) (R = yttrium, neodymium, gadolinium; T = indium, cobalt, silicon, gallium)

    NASA Astrophysics Data System (ADS)

    Ren, Zhiyuan

    Our aim is to develop new RE-TM intermetallic compounds of the 2:17-type that have high Curie temperature Tc, large saturation magnetization Ms, and strong magnetocrystalline anisotropy (MCA). The new off-stoichiometric compound Sm2Fe17ALx formed the rhombohedral Th2Zn17-type structure when x was less than 6. The addition of Al increased its Tc due to the change of distance between the Fe-Fe pairs that were responsible for the exchange coupling. When Co, or Ni was used to substitute the Fe atoms in Sm2Fe17Al x, the substitution further enhanced Tc whereas Ms increased first and then decreased. A differential thermal analysis was made on the carbides of these samples, the results showed that Sm2Fe 16MnAl2C1.5 was stable even near 950°C. In the second part of the work, the effects of Co substitution on the exchange coupling and the magnetocrystalline anisotropy (MCA) of Sm2Fe 17-xCox were studied. The result was explained by the Mean Field Theory and the Sucksmith Model. It was found that the MCA constant K1 and the coupling constant JFe-Fe increased monotonously with Co concentration which indicated the weakening of the easy axis anisotropy. This result was consistent with the observed fact that the easy magnetization direction did not change with Co concentration as verified by the x-ray diffraction spectra of the aligned samples. Lastly, the electronic structure of the 2:17-type RE-TM compounds were studied by using x-ray photoelectron spectroscopy. An increment of density of state near the Fermi energy level (EF) had been observed on the Y2Fe17-xInx and Nd2Fe17-xMx (M = Ga, Si) compound as the substitution concentration increased, but it was not found in the Gd 2Fe17-xTx (T = Ga, Ti; x = 2). The XPS of the valence band of the Y2Fe17-xInx exhibited a one-peak structure, whereas those of the Nd2Fe 17-xTx and Gd2Fe17-xT x had a two-peak structure. It was evident that the formation of the two-peak structure was due to the presence of the 4f electrons, because the 4f

  12. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Shuleiko, D. V.; Ilin, A. S.

    2016-08-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa93/Si3N4 and SiN0.8/Si3N4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals.

  13. Multipurpose Compound

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Specially formulated derivatives of an unusual basic compound known as Alcide may be the answer to effective treatment and prevention of the disease bovine mastitis, a bacterial inflammation of a cow's mammary gland that results in loss of milk production and in extreme cases, death. Manufactured by Alcide Corporation the Alcide compound has killed all tested bacteria, virus and fungi, shortly after contact, with minimal toxic effects on humans or animals. Alcide Corporation credits the existence of the mastitis treatment/prevention products to assistance provided the company by NERAC, Inc.

  14. Porous silicon nanowires.

    PubMed

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-10-05

    In this mini-review, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures-single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion batteries, gas sensors and drug delivery.

  15. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

  16. Silicon microfabricated beam expander

    SciTech Connect

    Othman, A. Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  17. Silicone azide fireproof material

    NASA Technical Reports Server (NTRS)

    1978-01-01

    Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

  18. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1981-01-01

    The chemical engineering analysis of the preliminary process design of a process for producing solar cell grade silicon from dichlorosilane is presented. A plant to produce 1,000 MT/yr of silicon is analyzed. Progress and status for the plant design are reported for the primary activities of base case conditions (60 percent), reaction chemistry (50 percent), process flow diagram (35 percent), energy balance (10 percent), property data (10 percent) and equipment design (5 percent).

  19. Perfluorinated Compounds

    EPA Science Inventory

    Perfluorinated compounds such as the perfluoroalkyl acids (PFAAs) and their derivatives are important man-made chemicals that have wide consumer and industrial applications. They are relatively contemporary chemicals, being in use only since the 1950s, and until recently, have be...

  20. Clinical peritonitis from allergy to silicone ventriculoperitoneal shunt.

    PubMed

    Kurin, Michael; Lee, Kenneth; Gardner, Paul; Fajt, Merritt; Umapathy, Chandraprakash; Fasanella, Kenneth

    2017-03-06

    Silicones are inorganic compounds that have been used for the purpose of shunting ventricular fluid since the mid-20th century [1]. Complications of ventriculoperitoneal shunts have rarely been attributed to silicone allergy, with only a handful of cases reported in literature. The classic presentation of allergy to silicone ventriculoperitoneal shunt, i.e., abdominal pain with recurrent skin breakdown along the shunt tract, is nonspecific and difficult to distinguish clinically from other causes of shunt-related symptoms. It can be diagnosed by detection of antisilicone antibodies and is treated with removal of the shunt and replacement, if needed, with a polyurethane shunt system. We report the first case of suspected silicone allergy presenting as clinical peritonitis without overt colonic perforation.

  1. Silicon bulk growth for solar cells: Science and technology

    NASA Astrophysics Data System (ADS)

    Kakimoto, Koichi; Gao, Bing; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji

    2017-02-01

    The photovoltaic industry is in a phase of rapid expansion, growing by more than 30% per annum over the last few decades. Almost all commercial solar cells presently use single-crystalline or multicrystalline silicon wafers similar to those used in microelectronics; meanwhile, thin-film compounds and alloy solar cells are currently under development. The laboratory performance of these cells, at 26% solar energy conversion efficiency, is now approaching thermodynamic limits, with the challenge being to incorporate these improvements into low-cost commercial products. Improvements in the optical design of cells, particularly in their ability to trap weakly absorbed light, have also led to increasing interest in thin-film cells based on polycrystalline silicon; these cells have advantages over other thin-film photovoltaic candidates. This paper provides an overview of silicon-based solar cell research, especially the development of silicon wafers for solar cells, from the viewpoint of growing both single-crystalline and multicrystalline wafers.

  2. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  3. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  4. Silicon photonic devices for optoelectronic integrated circuits

    NASA Astrophysics Data System (ADS)

    Tien, Ming-Chun

    Electronic and photonic integrated circuits use optics to overcome bottlenecks of microelectronics in bandwidth and power consumption. Silicon photonic devices such as optical modulators, filters, switches, and photodetectors have being developed for integration with electronics based on existing complementary metal-oxide-semiconductor (CMOS) circuits. An important building block of photonic devices is the optical microresonator. On-chip whispering-gallery-mode optical resonators such as microdisks, microtoroids, and microrings have very small footprint, and thus are suitable for large scale integration. Micro-electro-mechanical system (MEMS) technology enables dynamic control and tuning of optical functions. In this dissertation, microring resonators with tunable power coupling ratio using MEMS electrostatic actuators are demonstrated. The fabrication is compatible with CMOS. By changing the physical gap spacing between the waveguide coupler and the microring, the quality factor of the microring can be tuned from 16,300 to 88,400. Moreover, we have demonstrated optical switches and tunable optical add-drop filters with an optical bandwidth of 10 GHz and an extinction ratio of 20 dB. Potentially, electronic control circuits can also be integrated. To realize photonic integrated circuits on silicon, electrically-pumped silicon lasers are desirable. However, because of the indirect bandgap, silicon is a poor material for light emission compared with direct-bandgap III-V compound semiconductors. Heterogeneous integration of III-V semiconductor lasers on silicon is an alternative to provide on-chip light sources. Using a room-temperature, post-CMOS optofluidic assembly technique, we have experimentally demonstrated an InGaAsP microdisk laser integrated with silicon waveguides. Pre-fabricated InGaAsP microdisk lasers were fluidically assembled and aligned to the silicon waveguides on silicon-on-insulator (SOI) with lithographic alignment accuracy. The assembled

  5. Novel axially disubstituted non-aggregated silicon phthalocyanines.

    PubMed

    Bıyıklıoğlu, Zekeriya; Cakır, Dilek

    2012-12-01

    This paper describes the synthesis, spectroscopic characterization of a range of new axially-disubstituted silicon phthalocyanines with 2-[2-(dimethylamino)ethoxy] or 2-[2-(1,4,7,10,13-pentaoxa-16-azacyclooctadecan-16-yl)ethoxy] groups as axial ligands. 2-[2-(Dimethylamino)ethoxy]ethanol 2, 2-[2-(1,4,7,10,13-pentaoxa-16-azacyclooctadecan-16-yl)ethoxy]ethanol 4 are reacted with silicon phthalocyanine 1, to give an axially-disubstituted silicon phthalocyanines 3 and 5. Axially-disubstituted silicon phthalocyanine complexes were synthesized at the first time. Newly synthesized silicon phthalocyanines were characterized by UV-Vis, IR, (1)H NMR, (13)C NMR spectroscopy, ESI mass spectrometry. These new silicon(IV) phthalocyanines 3 and 5 showed excellent solubility in organic solvents such as CHCl(3), CH(2)Cl(2), acetone, DMF, DMSO, THF, EtOAc. The aggregation behavior of these compounds were investigated in different concentrations of DMSO. The effect of solvents on absorption spectra were studied in various organic solvents. The thermal stabilities of the silicon(IV) phthalocyanines 3 and 5 were determined by thermogravimetric analysis.

  6. Oxygen defect processes in silicon and silicon germanium

    SciTech Connect

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  7. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    NASA Technical Reports Server (NTRS)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  8. Layered amorphous silicon as negative electrodes in lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Zhao, Leyi; Dvorak, D. J.; Obrovac, M. N.

    2016-11-01

    Chemical delithiation is used to prepare bulk quantities of amorphous silicon powder from lithium-silicon compounds. The amorphous silicon materials formed are air and water stable and are found to have layered structures. When cycled in Li-ion half cells, coatings containing layered amorphous silicon are found to have significantly lower volume expansion during lithiation and improved cycling characteristics compared to that of bulk crystalline Si. We suggest chemical delithiation as a convenient method to synthesize bulk quantities of Si powders containing self-organized void spaces that can accommodate volume expansion during lithiation.

  9. Diboride diffusion barriers in silicon and GaAs technology

    NASA Astrophysics Data System (ADS)

    Shappirio, J. R.; Finnegan, J. J.; Lux, R. A.

    1986-12-01

    The synthesis and properties of a new class of contact compounds, the transition metal borides, are described. The effectiveness of the contact compounds as diffusion barriers when used to separate silicon from second level aluminum metallization is evaluated. Bulk and thin film resistivity and melting point data for disilicides and diborides are compared. The application of ZrB2 and TiB2 diffusion barriers to achieve stable ohmic contacts to n-type GaAs is discussed.

  10. Towards silicon speciation in light petroleum products using gas chromatography coupled to inductively coupled plasma mass spectrometry equipped with a dynamic reaction cell

    NASA Astrophysics Data System (ADS)

    Chainet, Fabien; Lienemann, Charles-Philippe; Ponthus, Jeremie; Pécheyran, Christophe; Castro, Joaudimir; Tessier, Emmanuel; Donard, Olivier François Xavier

    2014-07-01

    Silicon speciation has recently gained interest in the oil and gas industry due to the significant poisoning problems caused by silicon on hydrotreatment catalysts. The poisoning effect clearly depends on the structure of the silicon species which must be determined and quantified. The hyphenation of gas chromatography (GC) coupled to inductively coupled plasma mass spectrometry (ICP-MS) allows a specific detection to determine the retention times of all silicon species. The aim of this work is to determine the retention indices of unknown silicon species to allow their characterization by a multi-technical approach in order to access to their chemical structure. The optimization of the dynamic reaction cell (DRC) of the ICP-MS using hydrogen as reactant gas successfully demonstrated the resolution of the interferences (14N14N+ and 12C16O+) initially present on 28Si. The linearity was excellent for silicon compounds and instrumental detection limits ranged from 20 to 140 μg of Si/kg depending on the response of the silicon compounds. A continuous release of silicon in the torch was observed most likely due to the use of a torch and an injector which was made of quartz. A non-universal response for silicon was observed and it was clearly necessary to use response coefficients to quantify silicon compounds. Known silicon compounds such as cyclic siloxanes (D3-D16) coming from PDMS degradation were confirmed. Furthermore, more than 10 new silicon species never characterized before in petroleum products were highlighted in polydimethylsiloxane (PDMS) degradation samples produced under thermal cracking of hydrocarbons. These silicon species mainly consisted of linear and cyclic structures containing reactive functions such as ethoxy, peroxide and hydroxy groups which can be able to react with the alumina surface and hence, poison the catalyst. This characterization will further allow the development of innovative solutions such as trapping silicon compounds or

  11. Hydrogenated amorphous silicon photonics

    NASA Astrophysics Data System (ADS)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  12. Atomic-layer deposition of cadmium chalcogenides on silicon

    NASA Astrophysics Data System (ADS)

    Ezhovskii, Yu. K.

    2014-09-01

    The results of studies of the synthesis of ultrafine layers of cadmium selenide and telluride by atomic-layer deposition on the silicon surface of different orientations were summarized. The main tendencies of the chemisorption of the components and conditions of layer growth during the formation of nanostructures of these compounds were determined.

  13. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  14. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2003-01-01

    Seawater and natural brines accounted for about 60 percent of U.S. magnesium compounds production during 2002. Dead-burned and caustic-calcined magnesias were recovered from seawater by Premier Chemicals in Florida. They were also recovered from well brines in Michigan by Dow Chemical, Martin Marietta Magnesia Specialties and Rohm & Haas. And they were recovered from magnesite in Nevada by Premier Chemicals.

  15. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2006-01-01

    In 2005, seawater and natural brines accounted for 51% of US magnesium compounds production. World magnesia production was estimated to be 14.5 Mt. Most of the production came from China, North Korea, Russia and Turkey. Although no specific production figures are available, Japan and the United States are estimated to account for almost one-half of the world's capacity from seawater and brines.

  16. Bond Angles in the Crystalline Silicon/Silicon Nitride Interface

    NASA Astrophysics Data System (ADS)

    Leonard, Robert H.; Bachlechner, Martina E.

    2006-03-01

    Silicon nitride deposited on a silicon substrate has major applications in both dielectric layers in microelectronics and as antireflection and passivation coatings in photovoltaic applications. Molecular dynamic simulations are performed to investigate the influence of temperature and rate of externally applied strain on the structural and mechanical properties of the silicon/silicon nitride interface. Bond-angles between various atom types in the system are used to find and understand more about the mechanisms leading to the failure of the crystal. Ideally in crystalline silicon nitride, bond angles of 109.5 occur when a silicon atom is at the vertex and 120 angles occur when a nitrogen atom is at the vertex. The comparison of the calculated angles to the ideal values give information on the mechanisms of failure in silicon/silicon nitride system.

  17. Very high temperature silicon on silicon pressure transducers

    NASA Technical Reports Server (NTRS)

    Kurtz, Anthony D.; Nunn, Timothy A.; Briggs, Stephen A.; Ned, Alexander

    1992-01-01

    A silicon on silicon pressure sensor has been developed for use at very high temperatures (1000 F). The design principles used to fabricate the pressure sensor are outlined and results are presented of its high temperature performance.

  18. Generation of low work function, stable compound thin films by laser ablation

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2001-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  19. Research on Silicon, Carbon, and Silicon Carbide Heterostructures

    DTIC Science & Technology

    1990-09-14

    0Innr Jc9&9b 1. TITLE (Include Security Classification) Research on Silicon, Carbon, and Silicon Carbide Heterostructures Z. PERSONAL AUTHOR(S) W. D...and identify by block number) FIELD I GROUP SUB-GROUP PLASMAS. DEPOSITION. THIN FILMS. SILICON CARBIDE . DIAMOND. SURFACES. DESORPTION. CHARACTERIZATION...AND SILICON CARBIDE HETEROSTRUCTURES W. D. Partlow (P.I.), W. J. Choyke, J. T. Yates, Jr., C. C. Cheng, H. Gutleben, L. E. Kline, R. R. Mitchell, J

  20. Spiral silicon drift detectors

    SciTech Connect

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs.

  1. Polytetrafluoroethylene-coated pacemaker leads as surgical management of contact allergy to silicone.

    PubMed

    Vodiskar, Janez; Schnöring, Heike; Sachweh, Jörg S; Mühler, Eberhard; Vazquez-Jimenez, Jaime F

    2014-01-01

    We have previously reported an 18-year-old girl with a congenital heart defect who developed complete heart block after one of her corrective surgeries and who needed an epicardial pacemaker implantation. She developed contact sensitivity to silicone compounds. The problem was solved by implanting a silicone-free pacemaker system utilizing silicone-free transvenous leads. The patient was readmitted 2 years later due to lead failure. As no silicone-free epicardial leads were available, we decided to use standard silicone epicardial leads and enclose the whole system in Gore-Tex material (W.L. Gore & Associates, Flagstaff, AZ). Based on our experience we would discourage the use of silicone-free transvenous pacing leads for epicardial use.

  2. Bondability of RTV silicon rubber

    NASA Technical Reports Server (NTRS)

    Delollis, N. J.; Montoya, O.

    1972-01-01

    Glow discharge method for producing a bondable Room Temperature Vulcanizing (RTV) silicone is described. Mechanical and chemical properties of silicone specimens are described. Theory concerning the relationship between surface characteristics and bondability is examined with respect to the polymer specimen.

  3. Bond Sensitivity to Silicone Contamination

    NASA Technical Reports Server (NTRS)

    Caldwell, G. A.; Hudson, W. D.; Hudson, W. D.; Cash, Stephen F. (Technical Monitor)

    2003-01-01

    Currently during fabrication of the Space Shuttle booster rocket motors, the use of silicone and silicone-containing products is prohibited in most applications. Many shop aids and other materials containing silicone have the potential, if they make contact with a bond surface, to transfer some of the silicone to the substrates being bonded. Such transfer could result in a reduction of the bond strength or even failure of the subsequent bonds. This concern is driving the need to understand the effect of silicones and the concentration needed to affect a given bond-line strength. Additionally, as silicone detection methods used for materials acceptance improve what may have gone unnoticed earlier is now being detected. Thus, realistic silicone limits for process materials (below which bond performance is satisfactory) are needed rather than having an absolute no silicone permitted policy.

  4. The electrophotonic silicon biosensor

    PubMed Central

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  5. Neuromorphic Silicon Neuron Circuits

    PubMed Central

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  6. Crystalline oxides on silicon.

    PubMed

    Reiner, James W; Kolpak, Alexie M; Segal, Yaron; Garrity, Kevin F; Ismail-Beigi, Sohrab; Ahn, Charles H; Walker, Fred J

    2010-07-20

    This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface. An interdisciplinary approach involving MBE, advanced real-space structural characterization, and first-principles theory has led to a detailed understanding of the process by which the interface between crystalline oxides and silicon forms, the resulting structure of the interface, and the link between structure and functionality. Potential applications in electronics and photonics are also discussed.

  7. Microgravity silicon zoning investigation

    NASA Technical Reports Server (NTRS)

    Kern, E. L.; Gill, G. L., Jr.

    1985-01-01

    The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.

  8. The electrophotonic silicon biosensor

    NASA Astrophysics Data System (ADS)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  9. Scriber for silicon wafers

    NASA Technical Reports Server (NTRS)

    Yamakawa, K. A.; Fortier, E. P. (Inventor)

    1981-01-01

    A device for dividing silicon wafers into rectangular chips is characterized by a base including a horizontally oriented bed with a planar support surface, a vacuum chuck adapted to capture a silicon wafer seated on the support for translation in mutually perpendicular directions. A stylus support mounted on the bed includes a shaft disposed above and extended across the bed and a truck mounted on the shaft and supported thereby for linear translation along a path extended across the bed a vertically oriented scribe has a diamond tip supported by the truck also adapted as to engage a silicon wafer captured by the chuck and positioned beneath it in order to form score lines in the surface of the wafer as linear translation is imparted to the truck. A chuck positioning means is mounted on the base and is connected to the chuck for positioning the chuck relative to the stylus.

  10. Floating Silicon Method

    SciTech Connect

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  11. Silicon optical modulators

    NASA Astrophysics Data System (ADS)

    Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Thomson, D. J.

    2010-08-01

    Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

  12. Silicon carbide thyristor

    NASA Technical Reports Server (NTRS)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  13. Thick silicon growth techniques

    NASA Technical Reports Server (NTRS)

    Bates, H. E.; Mlavsky, A. I.; Jewett, D. N.

    1973-01-01

    Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

  14. Cell technology: Advanced silicon sheet

    NASA Technical Reports Server (NTRS)

    Morrison, Andrew D.

    1986-01-01

    The Flat-plate Solar Array (FSA)-sponsored Fourth Silicon Stress/Strain Workshop reviewed, coordinated, and assessed the progress in understanding and controlling stress and strain during the crystal growth of silicon ribbons. dislocation electrical activity and limits on solar cell efficiency, and on studying the effects of dopants on EFG characteristics. Work on silicon for high-efficiency solar cells, stress-strain relationships in silicon ribbon, and high temperature deformation of dendritic web ribbon was also discussed.

  15. Substrate for silicon solar cells

    SciTech Connect

    Thomas, D.E.

    1982-08-10

    A substrate is made for silicon solar cells by heating a sheet of large-grained silicon steel at a temperature of at least about 1300* C. In an atmosphere of hydrogen and tungsten hexafluo (Or hexachloride) at a partial pressure ratio of hydrogen to tungsten hexafluoride of about 3 to about 6 to deposit an epitaxial layer of tungsten on said sheet of silicon steel. Epitaxial silicon can then be deposited in a conventional manner on the layer of epitaxial tungsten.

  16. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2002-01-01

    Seawater and natural brines accounted for about 60% of US magnesium compounds production in 2001. Dead-burned and caustic-calcined magnesias were recovered from seawater in Florida by Premier Chemicals. They were also recovered from Michigan well brines by Dow Chemical, Martin Marietta Magnesia Specialties and Rohm & Haas. And Premier Chemicals recovered dead-burned and caustic-calcined magnesias from magnesite in Nevada. Reilly Industries and Great Salt Lake Minerals recovered magnesium chloride brines from the Great Salt Lake in Utah.

  17. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2011-01-01

    Seawater and natural brines accounted for about 54 percent of U.S. magnesium compounds production in 2010. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Magnesia in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Magnesia. Intrepid Potash-Wendover and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma in Delaware and Premier Magnesia in Florida, and by Martin Marietta from its operation mentioned above.

  18. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2010-01-01

    Seawater and natural brines accounted for about 40 percent of U.S. magnesium compounds production in 2009. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Chemicals in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Chemicals. Intrepid Potash-Wendover, and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma in Delaware and Premier Chemicals in Florida, and by Martin Marietta from its operation mentioned above.

  19. Micromachined silicon electrostatic chuck

    SciTech Connect

    Anderson, R.A.; Seager, C.H.

    1994-12-31

    In the field of microelectronics, and in particular the fabrication of microelectronics during plasma etching processes, electrostatic chucks have been used to hold silicon wafers during the plasma etching process. Current electrostatic chucks that operate by the {open_quotes}Johnson-Rahbek Effect{close_quotes} consist of a metallic base plate that is typically coated with a thick layer of slightly conductive dielectric material. A silicon wafer of approximately the same size as the chuck is placed on top of the chuck and a potential difference of several hundred volts is applied between the silicon and the base plate of the electrostatic chuck. This causes an electrostatic attraction proportional to the square of the electric field in the gap between the silicon wafer and the chuck face. When the chuck is used in a plasma filled chamber the electric potential of the wafer tends to be fixed by the effective potential of the plasma. The purpose of the dielectric layer on the chuck is to prevent the silicon wafer from coming into direct electrical contact with the metallic part of the chuck and shorting out the potential difference. On the other hand, a small amount of conductivity appears to be desirable in the dielectric coating so that much of its free surface between points of contact with the silicon wafer is maintained near the potential of the metallic base plate; otherwise, a much larger potential difference would be needed to produce a sufficiently large electric field in the vacuum gap between the wafer and chuck. Typically, the face of the chuck has a pattern of grooves in which about 10 torr pressure of helium gas is maintained. This gas provides cooling (thermal contact) between the wafer and the chuck. A pressure of 10 torr is equivalent to about 0.2 psi.

  20. Electrochemical thinning of silicon

    DOEpatents

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  1. Electrochemical thinning of silicon

    DOEpatents

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  2. Silicon sheet technologies

    SciTech Connect

    Ciszek, T.F.

    1982-09-01

    A classification of silicon sheet growth methods by meniscus geometry permits them to be discussed in three groups: short meniscus techniques, high meniscus techniques, and extended meniscus or large solid/liquid interface area techniques. A second parameter, meniscus shaper interaction with the liquid silicon, is also instrumental in determining the characteristics of the various sheet processes. The current status of each process is discussed in the context of meniscus geometry and shaper/melt interaction. One aspect of sheet growth, surface area generation rate, is quantitatively compared with combined ingot growth and wafering surface area generation rates.

  3. Fracture toughness of silicon

    NASA Technical Reports Server (NTRS)

    Chen, C. P.; Leipold, M. H.

    1980-01-01

    The paper presents a study to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. It is shown that bar specimens cracked by Knoop microhardness indentation and tested to fracture under four-point bending at room temperature were used to determine the fracture toughness values. It is found that the lowest fracture toughness value of single crystal silicon was 0.82 MN/m to the 3/2 in the 111 plane type orientation, although the difference in values in the 111, 110, and 100 planes was small.

  4. Monitoring of Malodorous Compounds from a Swine Waste Lagoon by an Equilibrium Technique

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The levels of malodorous compounds in the air above an anaerobic lagoon of a large swine farrowing operation were measured. Compounds were adsorbed onto silicone stir bars and retained compounds measured by gas chromatography-mass spectroscopy. Equilibration times were previously determined by exper...

  5. Light emission from porous silicon

    NASA Astrophysics Data System (ADS)

    Penczek, John

    The continuous evolution of silicon microelectronics has produced significant gains in electronic information processing. However, greater improvements in performance are expected by utilizing optoelectronic techniques. But these techniques have been severely limited in silicon- based optoelectronics due to the lack of an efficient silicon light emitter. The recent observation of efficient light emission from porous silicon offer a promising opportunity to develop a suitable silicon light source that is compatible with silicon microelectronics. This dissertation examined the porous silicon emission mechanism via photoluminescence, and by a novel device structure for porous silicon emitters. The investigation first examined the correlation between porous silicon formation conditions (and subsequent morphology) with the resulting photoluminescence properties. The quantum confinement theory for porous silicon light emission contends that the morphology changes induced by the different formation conditions determine the optical properties of porous silicon. The photoluminescence spectral shifts measured in this study, in conjunction with TEM analysis and published morphological data, lend support to this theory. However, the photoluminescence spectral broadening was attributed to electronic wavefunction coupling between adjacent silicon nanocrystals. An novel device structure was also investigated in an effort to improve current injection into the porous silicon layer. The selective etching properties of porous silicon were used to create a p-i-n structure with crystalline silicon contacts to the porous silicon layer. The resulting device was found to have unique characteristics, with a negative differential resistance region and current-induced emission that spanned from 400 nm to 5500 nm. The negative differential resistance was correlated to resistive heating effects in the device. A numerical analysis of thermal emission spectra from silicon films, in addition to

  6. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2007-01-01

    Seawater and natural brines accounted for about 52 percent of U.S. magnesium compounds production in 2006. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties from well brines in Michigan. Caustic-calcined magnesia was recovered from sea-water by Premier Chemicals in Florida; from well brines in Michigan by Martin Marietta and Rohm and Haas; and from magnesite in Nevada by Premier Chemicals. Intrepid Potash-Wendover and Great Salt Lake Minerals recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from brucite by Applied Chemical Magnesias in Texas, from seawater by SPI Pharma in Delaware and Premier Chemicals in Florida, and by Martin Marietta and Rohm and Haas from their operations mentioned above. About 59 percent of the magnesium compounds consumed in the United States was used for refractories that are used mainly to line steelmaking furnaces. The remaining 41 percent was consumed in agricultural, chemical, construction, environmental and industrial applications.

  7. Intermetallic Compounds

    NASA Astrophysics Data System (ADS)

    Takagiwa, Y.; Matsuura, Y.; Kimura, K.

    2014-06-01

    We have focused on the binary narrow-bandgap intermetallic compounds FeGa3 and RuGa3 as thermoelectric materials. Their crystal structure is FeGa3-type (tetragonal, P42/ mnm) with 16 atoms per unit cell. Despite their simple crystal structure, their room temperature thermal conductivity is in the range 4-5-W-m-1-K-1. Both compounds have narrow-bandgaps of approximately 0.3-eV near the Fermi level. Because their Seebeck coefficients are quite large negative values in the range 350-<-| S 373K|-<-550- μV-K-1 for undoped samples, it should be possible to obtain highly efficient thermoelectric materials both by adjusting the carrier concentration and by reducing the thermal conductivity. Here, we report the effects of doping on the thermoelectric properties of FeGa3 and RuGa3 as n and p-type materials. The dimensionless figure of merit, ZT, was significantly improved by substitution of Sn for Ga in FeGa3 (electron-doping) and by substitution of Zn for Ga in RuGa3 (hole-doping), mainly as a result of optimization of the electronic part, S 2 σ.

  8. Silicon carbide reinforced silicon carbide composite

    NASA Technical Reports Server (NTRS)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  9. Pair distribution functions of silicon/silicon nitride interfaces

    NASA Astrophysics Data System (ADS)

    Cao, Deng; Bachlechner, Martina E.

    2006-03-01

    Using molecular dynamics simulations, we investigate different mechanical and structural properties of the silicon/silicon nitride interface. One way to characterize the structure as tensile strain is applied parallel to the interface is to calculate pair distribution functions for specific atom types. The pair distribution function gives the probability of finding a pair of atoms a distance r apart, relative to the probability expected for a completely random distribution at the same density. The pair distribution functions for bulk silicon nitride reflect the fracture of the silicon nitride film at about 8 % and the fact that the centerpiece of the silicon nitride film returns to its original structure after fracture. The pair distribution functions for interface silicon atoms reveal the formation of bonds for originally unbound atom pairs, which is indicative of the interstitial-vacancy defect that causes failure in silicon.

  10. Hybrid Silicon Nanophotonic Devices: Enhancing Light Emission, Modulation, and Confinement

    NASA Astrophysics Data System (ADS)

    Briggs, Ryan Morrow

    Silicon has become an increasingly important photonic material for communications, information processing, and sensing applications. Silicon is inexpensive compared to compound semiconductors, and it is well suited for confining and guiding light at standard telecommunication wavelengths due to its large refractive index and minimal intrinsic absorption. Furthermore, silicon-based optical devices can be fabricated alongside microelectronics while taking advantage of advanced silicon processing technologies. In order to realize complete chip-based photonic systems, certain critical components must continue to be developed and refined on the silicon platform, including compact light sources, modulators, routers, and sensing elements. However, bulk silicon is not necessarily an ideal material for many active devices because of its meager light emission characteristics, limited refractive index tunability, and fundamental limitations in confining light beyond the diffraction limit. In this thesis, we present three examples of hybrid devices that use different materials to bring additional optical functionality to silicon photonics. First, we analyze high-index-contrast silicon slot waveguides and their integration with light-emitting erbium-doped glass materials. Theoretical and experimental results show significant enhancement of spontaneous emission rates in slot structures. We then demonstrate the integration of vanadium dioxide, a thermochromic phase-change material, with silicon waveguides to form micron-scale absorption modulators. It is shown experimentally that a 2-mum long waveguide-integrated device exhibits broadband modulation of more than 6.5 dB at wavelengths near 1550 nm. Finally, we demonstrate polymer-on-gold dielectric-loaded surface-plasmon waveguides and ring resonators coupled to silicon waveguides with 1.0+/-0.1 dB insertion loss. The plasmonic waveguides are shown to support a single surface mode at telecommunication wavelengths, with strong

  11. Selective formation of porous silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  12. Selective formation of porous silicon

    NASA Technical Reports Server (NTRS)

    Fathauer, Jones (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  13. Silicon Carbide Metallization

    NASA Astrophysics Data System (ADS)

    Lescoat, F.; Tanguy, F.; Durand, P.

    2016-05-01

    A study has been done to assess the feasibility of metallization of Silicon Carbide (SiC) in order to simplify design and mounting of one or more ground reference rail needed to provide an electrical reference for electronics mounted on an SiC structure.

  14. Silicon Raman polarizer.

    PubMed

    Kozlov, Victor V; Wabnitz, Stefan

    2012-02-15

    We theoretically investigate the polarization properties of Raman amplifiers based on silicon-on-insulator waveguides, and show that it is possible to realize a waveguide Raman polarizer. The Raman polarizer is a special type of Raman amplifier with the property of producing an amplified and highly repolarized beam when it is fed by a relatively weak and unpolarized signal.

  15. Composition Comprising Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  16. Silicone/Acrylate Copolymers

    NASA Technical Reports Server (NTRS)

    Dennis, W. E.

    1982-01-01

    Two-step process forms silicone/acrylate copolymers. Resulting acrylate functional fluid is reacted with other ingredients to produce copolymer. Films of polymer were formed by simply pouring or spraying mixture and allowing solvent to evaporate. Films showed good weatherability. Durable, clear polymer films protect photovoltaic cells.

  17. Characterization of Silicon Carbide.

    DTIC Science & Technology

    The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

  18. Analysis of porous silicon

    NASA Astrophysics Data System (ADS)

    Earwaker, L. G.; Farr, J. P. G.; Grzeszczyk, P. E.; Sturland, I.; Keen, J. M.

    1985-06-01

    Porous silicon, suitable after oxidation for dielectric isolation, has been produced successfully by anodizing silicon in strong HF. The oxidized layer has been shown to have promise in device manufacture, providing high packing densities and radiation hardness. Anodizing has been carried out using both single and double cells, following the effects of current density. HF concentration and silicon resistivity. The resultant porous layers have been characterised with respect to composition and structure. The materials produced differ considerably in lattice strain, composition and reactivities. Prompt radiation analyses 19F(p,αγ), 16O(d,α), 12C(d,p), are useful for monitoring the anodizing procedures and subsequent oxidation: currently, interest centres on the mechanistic information obtained. RBS analysis using α-particles gives a much lower Si response from porous than from bulk silicon. Glancing angle proton recoil analyses reveal considerable quantities of hydrogen in the porous layers. These mutually consistent findings have considerable mechanistic significance; extensive Si-H bonding occurs following a 2 equivalent Faradaic process.

  19. Amorphous silicon photovoltaic devices

    DOEpatents

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  20. Microgravity Silicon Zoning Investigation

    NASA Technical Reports Server (NTRS)

    Kern, E. L.

    1985-01-01

    This research program is directed toward the understanding of the float zone crystal growth process, the melt interactions which lead to crystal inhomogeneities, and the influence of microgravity on reducing these inhomogeneities. Silicon was selected as the model crystal because its inhomogeneities lead to known variations in device performance, and because the mechanisms involved in its growth are understood better than for other high temperature crystals. The objective of the program is to understand the growth mechanisms in float zone growth and thereby determine the feasibility and advantages of float zone growth of silicon under microgravity conditions. This will be done by characterizing the growth at g = 1, projecting the changes in melt flows due to microgravity, observing these in space growth and determining the effects on defective inhomogeneities. A Thin Rod Zoner was constructed as a laboratory prototype for flight growth of 5 mm diameter silicon crystals, which can be done within the power and cooling capabilities of shuttle flights. A new method of zoning silicon, using resistance heating, has resulted in melting 5 mm diameter ingots.

  1. Magnesium compounds

    USGS Publications Warehouse

    Kramer, D.A.

    2012-01-01

    Seawater and natural brines accounted for about 57 percent of magnesium compounds produced in the United States in 2011. Dead-burned magnesia was produced by Martin Marietta Magnesia Specialties LLC from well brines in Michigan. Caustic-calcined magnesia was recovered from seawater by Premier Magnesia LLC in Florida, from well brines in Michigan by Martin Marietta and from magnesite in Nevada by Premier Magnesia. Intrepid Potash Wendover LLC and Great Salt Lake Minerals Corp. recovered magnesium chloride brines from the Great Salt Lake in Utah. Magnesium hydroxide was produced from seawater by SPI Pharma Inc. in Delaware and Premier Magnesia in Florida, and by Martin Marietta from its brine operation in Michigan.

  2. Bismaleimide compounds

    DOEpatents

    Adams, Johnnie E.; Jamieson, Donald R.

    1986-01-14

    Bismaleimides of the formula ##STR1## wherein R.sub.1 and R.sub.2 each independently is H, C.sub.1-4 -alkyl, C.sub.1-4 -alkoxy, C1 or Br, or R.sub.1 and R.sub.2 together form a fused 6-membered hydrocarbon aromatic ring, with the proviso that R.sub.1 and R.sub.2 are not t-butyl or t-butoxy; X is O, S or Se; n is 1-3; and the alkylene bridging group, optionally, is substituted by 1-3 methyl groups or by fluorine, form polybismaleimide resins which have valuable physical properties. Uniquely, these compounds permit extended cure times, i.e., they remain fluid for a time sufficient to permit the formation of a homogeneous melt prior to curing.

  3. Bismaleimide compounds

    DOEpatents

    Adams, J.E.; Jamieson, D.R.

    1986-01-14

    Bismaleimides of the formula shown in the diagram wherein R[sub 1] and R[sub 2] each independently is H, C[sub 1-4]-alkyl, C[sub 1-4]-alkoxy, Cl or Br, or R[sub 1] and R[sub 2] together form a fused 6-membered hydrocarbon aromatic ring, with the proviso that R[sub 1] and R[sub 2] are not t-butyl or t-butoxy; X is O, S or Se; n is 1--3; and the alkylene bridging group, optionally, is substituted by 1--3 methyl groups or by fluorine, form polybismaleimide resins which have valuable physical properties. Uniquely, these compounds permit extended cure times, i.e., they remain fluid for a time sufficient to permit the formation of a homogeneous melt prior to curing.

  4. Improved mold release for filled-silicone compounds

    NASA Technical Reports Server (NTRS)

    Accountius, O. E.

    1973-01-01

    Ceramic and filled-plastic materials used for fabrication of tiles are relatively brittle and easily break as they are being removed from molds. Dusting mold surfaces with commercially available glass microspheres provides mold release superior to existing spray releases. Glass-microsphere dusting also permits removal of uncured tile which has very little strength.

  5. Shock-tube studies of silicon-compound vapors

    NASA Technical Reports Server (NTRS)

    Park, C.; Fujiwara, T.

    1977-01-01

    Test gas mixtures containing SiO, SiO2, Si2, and SiH were produced in a shock tube by processing shock waves through a mixture of SiCl4 + N2O + Ar, SiH4 + Ar, or SiH4 + O2 + Ar. Absorption spectra of the test gases were studied photographically in the reflected shock region using a xenon flash lamp as the light source in the range of wavelengths between 250 and 600 nm. SiO was found to be a dominant species in the vapors produced by the SiCl4 + N2O and SiH4 + O2 mixtures. Spontaneous combustion was observed in the SiH4 + O2 + Ar mixture prior to the shock arrival, and the resulting solid SiO2 particles evaporated behind the shock wave. Spectral absorption characteristics of SiO, SiO2, Si2, and SiH were determined by studying the test gases.

  6. Analysis of copper-rich precipitates in silicon: chemical state,gettering, and impact on multicrystalline silicon solar cellmaterial

    SciTech Connect

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber,Eicke R.

    2004-11-08

    In this study, synchrotron-based x-ray absorption microspectroscopy (mu-XAS) is applied to identifying the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy (mu-XRF),and a segregation coefficient is determined from experimental data to beat least (1-2)'103. Additionally, mu-XAS data directly demonstrates that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  7. Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

    NASA Astrophysics Data System (ADS)

    Buonassisi, Tonio; Marcus, Matthew A.; Istratov, Andrei A.; Heuer, Matthias; Ciszek, Theodore F.; Lai, Barry; Cai, Zhonghou; Weber, Eicke R.

    2005-03-01

    In this study, synchrotron-based x-ray absorption microspectroscopy (μ-XAS) is applied to identify the chemical states of copper-rich clusters within a variety of silicon materials, including as-grown cast multicrystalline silicon solar cell material with high oxygen concentration and other silicon materials with varying degrees of oxygen concentration and copper contamination pathways. In all samples, copper silicide (Cu3Si) is the only phase of copper identified. It is noted from thermodynamic considerations that unlike certain metal species, copper tends to form a silicide and not an oxidized compound because of the strong silicon-oxygen bonding energy; consequently the likelihood of encountering an oxidized copper particle in silicon is small, in agreement with experimental data. In light of these results, the effectiveness of aluminum gettering for the removal of copper from bulk silicon is quantified via x-ray fluorescence microscopy, and a segregation coefficient is determined from experimental data to be at least (1-2)×103. Additionally, μ-XAS data directly demonstrate that the segregation mechanism of Cu in Al is the higher solubility of Cu in the liquid phase. In light of these results, possible limitations for the complete removal of Cu from bulk mc-Si are discussed.

  8. Comparative infrared study of silicon and germanium nitrides

    NASA Astrophysics Data System (ADS)

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  9. Silicon oxidation in fluoride solutions

    NASA Technical Reports Server (NTRS)

    Sancier, K. M.; Kapur, V.

    1980-01-01

    Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

  10. Improved toughness of silicon carbide

    NASA Technical Reports Server (NTRS)

    Palm, J. A.

    1975-01-01

    Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

  11. Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Chen, Feng

    Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

  12. Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.

  13. Silicon improves the tolerance of wheat seedlings to ultraviolet-B stress.

    PubMed

    Yao, Xiaoqin; Chu, Jianzhou; Cai, Kunzheng; Liu, Long; Shi, Jiandong; Geng, Wenyue

    2011-10-01

    Enhanced ultraviolet-B (UV-B) irradiation is one of the most important abiotic stresses that could influence the growth and physiological traits of plants. In this work, we reported the effects of silicon on the growth and physiological characteristics of wheat seedlings (Triticum aestivum L. cv Hengmai5229) subject to UV-B stress. Treatments with silicon significantly increased total biomass and chlorophyll (a + b) content, and reduced malondialdehyde (MDA) content and the rate of superoxide radical (O(2) (-) ) production in wheat seedlings subjected to UV-B stress. Silicon treatments also induced an increased in soluble sugar, anthocyanins, and flavonoid content. Leaf silicon concentration increased with the increasing of silicon supply to soil. Positive correlations were found in leaf silicon concentration with total biomass, chlorophyll (a + b), proline, and soluble protein content, respectively. MDA content and the rate of O(2)(-) production were negatively correlated with leaf silicon concentration in seedlings. The results demonstrated that silicon alleviated the damage caused by UV-B on wheat seedlings to some extent by the increase in antioxidant compounds content and leaf silicon concentration.

  14. Silicon surface biofunctionalization with dopaminergic tetrahydroisoquinoline derivatives

    NASA Astrophysics Data System (ADS)

    Lucena-Serrano, A.; Lucena-Serrano, C.; Contreras-Cáceres, R.; Díaz, A.; Valpuesta, M.; Cai, C.; López-Romero, J. M.

    2016-01-01

    In this work we grafted vinyl- and azido-terminated tetrahydroisoquinolines (compounds 1 and 2, respectively) onto Hsbnd Si(1 1 1) silicon wafers obtaining highly stable modified surfaces. A double bond was incorporated into the tetrahydroisoquinoline structure of 1 to be immobilized by a light induced hydrosilylation reaction on hydrogen-terminated Si(1 1 1). The best results were obtained employing a polar solvent (DMSO), rather than a non-polar solvent (toluene). The azide derivative 2 was grafted onto alkenyl-terminated silicon substrates with copper-catalyzed azide-alkyne cycloaddition (CuAAC). Atomic force microscopy (AFM), contact angle goniometry (CA) and X-ray photoemission spectroscopy (XPS) were used to demonstrate the incorporation of 1 and 2 into the surfaces, study the morphology of the modified surfaces and to calculate the yield of grafting and surface coverage. CA measurements showed the increase in the surface hydrophobicity when 1 or 2 were incorporated into the surface. Moreover, compounds 1 and 2 were prepared starting from 1-(p-nitrophenyl)tetrahydroisoquinoline 3 under smooth conditions and in good yields. The structures of 1 and 2 were designed with a reduced A-ring, two substituents at positions C-6 and C-7, an N-methyl group and a phenyl moiety at C-1 in order to provide a high affinity against dopaminergic receptors. Moreover, O-demethylation of 1 was carried out once it was adsorbed onto the surface by treatment with BBr3. The method presented constitutes a simple, easily reproducible and high yielding approach for grafting complex organic biomolecules with dopaminergic properties onto silicon surfaces.

  15. Top-Coating Silicon Onto Ceramic

    NASA Technical Reports Server (NTRS)

    Heaps, J. D.; Nelson, L. D.; Zook, J. D.

    1985-01-01

    Polycrystalline silicon for solar cells produced at low cost. Molten silicon poured from quartz trough onto moving carbon-coated ceramic substrate. Doctor blade spreads liquid silicon evenly over substrate. Molten material solidifies to form sheet of polycrystalline silicon having photovoltaic conversion efficiency greater than 10 percent. Method produces 100-um-thick silicon coatings at speed 0.15 centimeter per second.

  16. Rapid Silicon Dioxide Film Formation on Clean Silicon Surfaces

    DTIC Science & Technology

    1992-10-19

    devices, and demands for higher reliability, thereby requiring further refinements of silicon planar technology . An understanding of the kinetics of film...110)) reveal the dependence of the refractive index of SiO. as a function of oxide thickness. No orientation effects were found. Kinetic measurements...further refinements of silicon planar technology . An understanding of the kinetics of film formation and optical properties of ultrathin silicon

  17. Amorphous silicon radiation detectors

    DOEpatents

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  18. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  19. Amorphous silicon radiation detectors

    DOEpatents

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  20. Silicon dendritic web material

    NASA Technical Reports Server (NTRS)

    Meier, D. L.; Campbell, R. B.; Sienkiewicz, L. J.; Rai-Choudhury, P.

    1982-01-01

    The development of a low cost and reliable contact system for solar cells and the fabrication of several solar cell modules using ultrasonic bonding for the interconnection of cells and ethylene vinyl acetate as the potting material for module encapsulation are examined. The cells in the modules were made from dendritic web silicon. To reduce cost, the electroplated layer of silver was replaced with an electroplated layer of copper. The modules that were fabricated used the evaporated Ti, Pd, Ag and electroplated Cu (TiPdAg/Cu) system. Adherence of Ni to Si is improved if a nickel silicide can be formed by heat treatment. The effectiveness of Ni as a diffusion barrier to Cu and the ease with which nickel silicide is formed is discussed. The fabrication of three modules using dendritic web silicon and employing ultrasonic bonding for interconnecting calls and ethylene vinyl acetate as the potting material is examined.

  1. Haematic silicon in drowning.

    PubMed

    Pierucci, Giovanni; Merlano, Federica; Chen, Yao; Sturini, Michela; Maraschi, Federica; Profumo, Antonella

    2016-04-01

    The aim of this paper was to evaluate silicon (Si) concentration in human whole ventricular blood as a further potential chemical marker in the diagnosis of drowning. We employed an acidic digestion for the extraction of soluble Si, and an alkaline digestion for the determination of total Si, including particulate matter, both arising from drowning medium. 29 suspected drowning situations, 24 in fresh water (Fw) and 5 in seawater (Sw), were examined. The difference in Si concentration between the left and right ventricular blood (Si ΔL-R) was measured and alkaline Si ΔL-R seems, indeed, a potentially significant complementary tool in the diagnosis of Fw drowning, because insoluble silicon fraction does not undergo hemo-dilution or hemo-concentration, and the ΔL-R is not affected by exogenous factors. In spite of the limited number of cases investigated, a good correlation was observed between the analytical results and the macro-microscopic autoptic findings.

  2. A silicon electromechanical photodetector.

    PubMed

    Tallur, Siddharth; Bhave, Sunil A

    2013-06-12

    Optomechanical systems have enabled wide-band optical frequency conversion and multichannel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon microresonator, which converts near-IR optical intensity modulation at 174.2 MHz and 1.198 GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors. While the results presented here constitute a purely classical demonstration, the device can also potentially be extended to the quantum regime to realize a photon-phonon translator.

  3. Germanium epitaxy on silicon

    PubMed Central

    Ye, Hui; Yu, Jinzhong

    2014-01-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics. PMID:27877657

  4. Multicolored Vertical Silicon Nanowires

    SciTech Connect

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  5. Germanium epitaxy on silicon.

    PubMed

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  6. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  7. Probing the mechanisms of silicon-mediated pathogen resistance.

    PubMed

    Cai, Kunzheng; Gao, Dan; Chen, Jining; Luo, Shiming

    2009-01-01

    Silicon is the second most abundant mineral element in soil, it has important role in alleviating various environmental stresses and enhancing plant resistance against pathogen, but the exact mechanism by which Si mediates pathogen resistance remains unclear. One of the resistance mechanisms is related to silicon deposition in leaf that acts as a physical barrier to hinder pathogen penetration. But more evidence show that silicon can induce defense responses that are functionally similar to systemic acquired resistance, Si-treated plants can significantly increase antioxidant enzyme activities and the production of antifungal compounds such as phenolic metabolism product, phytoalexins and pathogenesis-related proteins etc. Molecular and biochemical detections show that Si can activate the expression of defense-related genes and may play important role in the transduction of plant stress signal such as salicylic acid, jasmonic acid and ethylene.

  8. Silicon-Based Oxide/Silicon/Oxide Resonant Tunneling

    DTIC Science & Technology

    1998-03-01

    approximately 0.5 eV in the limit of high Ge content where only thin layers can be grown without lattice relaxation. Silicon germanium and its alloys...FINAL REPORT FOR SILICON -BASED OXIDE/ SILICON /OXIDE RESONANT TUNNELING CONTRACT NO. F49620-95-C-0001 1 December 1994 - 31 March 1998 Prepared For...RSSilicon-Based Oxide/ Silicon /Oxide Re sonant Tunneling 61102F L Aurkaft-n2305/CS Dr Seabaugh 7. MORMIG VIGNIIIO;NAME(S) 1 GRISS(ES) Pf~fOMING ORGANIZATION

  9. Silicon photonics manufacturing.

    PubMed

    Zortman, William A; Trotter, Douglas C; Watts, Michael R

    2010-11-08

    Most demonstrations in silicon photonics are done with single devices that are targeted for use in future systems. One of the costs of operating multiple devices concurrently on a chip in a system application is the power needed to properly space resonant device frequencies on a system's frequency grid. We asses this power requirement by quantifying the source and impact of process induced resonant frequency variation for microdisk resonators across individual die, entire wafers and wafer lots for separate process runs. Additionally we introduce a new technique, utilizing the Transverse Electric (TE) and Transverse Magnetic (TM) modes in microdisks, to extract thickness and width variations across wafers and dice. Through our analysis we find that a standard six inch Silicon on Insulator (SOI) 0.35 μm process controls microdisk resonant frequencies for the TE fundamental resonances to within 1 THz across a wafer and 105 GHz within a single die. Based on demonstrated thermal tuner technology, a stable manufacturing process exhibiting this level of variation can limit the resonance trimming power per resonant device to 231 μW. Taken in conjunction with the power to compensate for thermal environmental variations, the expected power requirement to compensate for fabrication-induced non-uniformities is 17% of that total. This leads to the prediction that thermal tuning efficiency is likely to have the most dominant impact on the overall power budget of silicon photonics resonator technology.

  10. Diamond-silicon carbide composite

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  11. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  12. Compound Droplet Levitation for Lab-on-a-Chip

    NASA Astrophysics Data System (ADS)

    Black, James; Neitzel, G. Paul

    2016-11-01

    A fluid transport mechanism utilizing thermocapillarity has been previously shown to successfully levitate and translate both microliter- and nanoliter-volume droplets of silicone oil. The surface flow required to drive levitation and transport has not been achieved for aqueous droplets, and encapsulation of samples within a layer of silicone oil is necessary. A droplet-on-demand generator capable of producing nanoliter-volume compound droplets has been developed and previously reported. The work presented here discusses efforts to demonstrate the applicability of this microfluidic transport mechanism to lab-on-a-chip systems. We elaborate on translation speeds of single-phase, nanoliter-volume, silicone-oil droplets. Compound droplets of varying compositions of oil and water are then generated, captured, levitated, and merged to explore the composition limits thereof. Work supported by NSF and NASA.

  13. Substrate for silicon solar cells

    SciTech Connect

    Thomas, D.E.

    1983-09-06

    A substrate is made for silicon solar cells by heating a sheet of large-grained silicon steel at a temperature of at least about 1300/sup 0/ C. in an atmosphere of hydrogen and tungsten hexafluoride (or hexachloride) at a partial pressure ratio of hydrogen to tungsten hexafluoride of about 3 to about 6 to deposit an epitaxial layer of tungsten on said sheet of silicon steel. Epitaxial silicon can then be deposited in a conventional manner on the layer of epitaxial tungsten.

  14. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  15. Silicon crystal growth in vacuum

    NASA Technical Reports Server (NTRS)

    Khattak, C. P.; Schmid, F.

    1982-01-01

    The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

  16. Solar silicon from directional solidification of MG silicon produced via the silicon carbide route

    NASA Technical Reports Server (NTRS)

    Rustioni, M.; Margadonna, D.; Pirazzi, R.; Pizzini, S.

    1986-01-01

    A process of metallurgical grade (MG) silicon production is presented which appears particularly suitable for photovoltaic (PV) applications. The MG silicon is prepared in a 240 KVA, three electrode submerged arc furnace, starting from high grade quartz and high purity silicon carbide. The silicon smelted from the arc furnace was shown to be sufficiently pure to be directionally solidified to 10 to 15 kg. After grinding and acid leaching, had a material yield larger than 90%. With a MG silicon feedstock containing 3 ppmw B, 290 ppmw Fe, 190 ppmw Ti, and 170 ppmw Al, blended with 50% of off grade electronic grade (EG) silicon to reconduct the boron content to a concentration acceptable for solar cell fabrication, the 99% of deep level impurities were concentrated in the last 5% of the ingot. Quite remarkably this material has OCV values higher tham 540 mV and no appreciable shorts due to SiC particles.

  17. Soft chemical synthesis of silicon nanosheets and their applications

    NASA Astrophysics Data System (ADS)

    Nakano, Hideyuki; Ikuno, Takashi

    2016-12-01

    Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

  18. Direct Human Contact with Siloxanes (Silicones) – Safety or Risk Part 1. Characteristics of Siloxanes (Silicones)

    PubMed Central

    Mojsiewicz-Pieńkowska, Krystyna; Jamrógiewicz, Marzena; Szymkowska, Katarzyna; Krenczkowska, Dominika

    2016-01-01

    Siloxanes are commonly known as silicones. They belong to the organosilicon compounds and are exclusively obtained by synthesis. Their chemical structure determines a range of physicochemical properties which were recognized as unique. Due to the susceptibility to chemical modifications, ability to create short, long or complex polymer particles, siloxanes found an application in many areas of human life. Siloxanes differ in particle size, molecular weight, shape and chemical groups. As a result, this determines the different physico-chemical properties, that directly affect the safety or the risk of their use. The areas that can be a source of danger to human health will be commented in this paper. PMID:27303296

  19. Fluidized-Bed Particles Scavenge Silicon Fines

    NASA Technical Reports Server (NTRS)

    Hsu, G. C.; Rohatgi, N.; Lutwack, R.; Hogle, R.

    1985-01-01

    Waste reduced, and silicon production rate improved. In new process silicon formed by thermal decomposition of SiH4. Part of silicon formed on silicon seed particles as result of surface chemical reaction. However, silicon formed by homogeneous reaction in gas phase tends to form aggregates of silicon atoms, which appear as fine particles (like dust). Believed that scavenging action of seed particles enables large fraction fines to be incorporated onto seed surface. This mode of growth confirmed by electron microscopy photographs.

  20. Fluidized bed for production of polycrystalline silicon

    SciTech Connect

    Flagella, R.N.

    1992-08-18

    This patent describes a method for removing silicon powder particles from a reactor that produces polycrystalline silicon by the pyrolysis of a silane containing gas in a fluidized bed reaction zone of silicon seed particles. It comprises introducing the silane containing gas stream into the reaction zone of fluidized silicon seed particles; heterogeneously decomposing the silane containing gas under conditions; collecting the silicon product particles from the collection zone; and removing silicon powder particles from the reactor.

  1. Development of a model and computer code to describe solar grade silicon production processes

    NASA Technical Reports Server (NTRS)

    Srivastava, R.; Gould, R. K.

    1979-01-01

    Mathematical models, and computer codes based on these models were developed which allow prediction of the product distribution in chemical reactors in which gaseous silicon compounds are converted to condensed phase silicon. The reactors to be modeled are flow reactors in which silane or one of the halogenated silanes is thermally decomposed or reacted with an alkali metal, H2 or H atoms. Because the product of interest is particulate silicon, processes which must be modeled, in addition to mixing and reaction of gas-phase reactants, include the nucleation and growth of condensed Si via coagulation, condensation, and heterogeneous reaction.

  2. Electronuclear paths in the nuclear conversion of molecular hydrogen in silicon

    NASA Astrophysics Data System (ADS)

    Ilisca, Ernest; Ghiglieno, Filippo

    2017-01-01

    The ortho-para conversion of hydrogen molecules oscillating inside tetrahedral cages of silicon compounds relies on the interaction of the nuclear protons with the silicon electrons. At each collision against the cage hard walls, the electron repulsion changes the molecular rotation while projecting a valence electron in the antibonding molecular state dressed by a group of conduction ones. That «bridge» facilitates the hyperfine contact of the electrons with the protons. At room temperature, the angular momentum transfer is enhanced by electron fluctuations that overcome the silicon gap and accelerate the nuclear rates by more than one order of magnitude.

  3. Silicon on insulator with active buried regions

    DOEpatents

    McCarthy, Anthony M.

    1996-01-01

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  4. Silicon on insulator with active buried regions

    DOEpatents

    McCarthy, A.M.

    1998-06-02

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  5. Silicon on insulator with active buried regions

    DOEpatents

    McCarthy, A.M.

    1996-01-30

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  6. Silicon on insulator with active buried regions

    DOEpatents

    McCarthy, Anthony M.

    1998-06-02

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  7. Silicon Utilizing Microbial Bioactivities in the Biosphere

    NASA Astrophysics Data System (ADS)

    Sen, M. M.; Das, S.

    2012-12-01

    Diatoms are unicellular eukaryotic algae and an important member of the silicon utilizing organisms, that generate ~20% of the ~100 billion metric tons of organic carbon produced through photosynthesis on Earth each year. Fragilariopsis is a dominating psychrophilic diatom genus in polar sea ice. The two species Fragilariopsis cylindrus and Fragilariopsis curta are able to grow and divide below freezing temperature. Antifreeze proteins (AFPs), involved in cold adaptation in several psychrophilic organisms, are widespread in this two polar species. Achanthes minutissima isolated as dominant diatom has degradable effects involving petroleum hydocarbons. Phaeodactylum tricornutum, have antibacterial activity and the fatty acid, eicosapentaenoic acid (EPA), has been identified as one compound responsible for this activity. Other antibacterial compounds are monounsaturated fatty acid (9Z)-hexadecenoic acid (palmitoleic acid; C16:1 n-7) and the relatively unusual polyunsaturated fatty acid (6Z, 9Z, 12Z)-hexadecatrienoic acid (HTA; C16:3 n-4). Both are active against Gram-positive bacteria and many Gram-negative pathogen. Palmitoleic acid is active at micro-molar concentrations, kills bacteria rapidly, and is highly active against multidrug-resistant Staphylococcus aureus. Domoic acid -a neurotoxin produced by Pseudo-nitzschia accumulates in marine invertebrates. Evidences of sea lion (Zalophus californianus) and human poisoning following consumption of contaminated blue mussels (Mytilus edulis) is mainly due to this toxin. Among the most prominent features described in human beings was memory impairment which led to the name Amnesic Shellfish Poisoning [ASP]. Silicon utilizing organisms can act as a bioindicator of environmental contamination, thus a rapid change in phytochelatins to both the increase in and the withdrawal of environmental Cd stress was found in Thalassiosira nordenskioeldii. Some of them also can produce biofuels particularly diatoms have significant

  8. Low cost silicon solar array project silicon materials task

    NASA Technical Reports Server (NTRS)

    1977-01-01

    A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant will be injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon will be developed using standard engineering approaches, and the salt vapor will later be electrolytically separated into its elemental constituents for recycle. Preliminary technical evaluations and economic projections indicate not only that this process appears to be feasible, but that it also has the advantages of rapid, high capacity production of good quality molten silicon at a nominal cost.

  9. New process of silicon carbide purification intended for silicon passivation

    NASA Astrophysics Data System (ADS)

    Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N. E.; Aglieri, V.; Mosca, M.; Macaluso, R.; Khirouni, K.; Ezzaouia, H.

    2017-01-01

    In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto silicon substrates by pulsed laser deposition technique (PLD) using purified SiC powder as target. Significant improvement of the minority carrier lifetime was obtained encouraging the use of SiC as a passivation layer for silicon.

  10. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

    NASA Technical Reports Server (NTRS)

    Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

    1995-01-01

    A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

  11. Surface breakdown of silicon

    NASA Astrophysics Data System (ADS)

    Feuerstein, R. J.; Senitzky, B.

    1991-07-01

    The surface electrical breakdown of n(+)nn(+) rectangular solid blocks of silicon was investigated. Studies were performed in air at pressures of 10 to the -6th torr and 1 atm, and in transformer oil, ethylene glycol, and deionized water, under pulsed electrical excitation. The breakdown voltage (BV) of these devices was found to increase as the dielectric constant of the ambient increased. Glow discharge cleaning of the surface in vacuum was found to have no effect on the BV. A theory of surface charging leading to field enhancement along the surface is developed on the basis of these findings.

  12. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Chemical engineering analyses involving the preliminary process design of a plant (1,000 metric tons/year capacity) to produce silicon via the technology under consideration were accomplished. Major activities in the chemical engineering analyses included base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provided detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process.

  13. Photoactive porous silicon nanopowder.

    PubMed

    Meekins, Benjamin H; Lin, Ya-Cheng; Manser, Joseph S; Manukyan, Khachatur; Mukasyan, Alexander S; Kamat, Prashant V; McGinn, Paul J

    2013-04-24

    Bulk processing of porous silicon nanoparticles (nSi) of 50-300 nm size and surface area of 25-230 m(2)/g has been developed using a combustion synthesis method. nSi exhibits consistent photoresponse to AM 1.5 simulated solar excitation. In confirmation of photoactivity, the films of nSi exhibit prompt bleaching following femtosecond laser pulse excitation resulting from the photoinduced charge separation. Photocurrent generation observed upon AM 1.5 excitation of these films in a photoelectrochemical cell shows strong dependence on the thickness of the intrinsic silica shell that encompasses the nanoparticles and hinders interparticle electron transfer.

  14. Silicon Web Process Development

    NASA Technical Reports Server (NTRS)

    Duncan, C. S.; Seidensticker, R. G.; Hopkins, R. H.; Mchugh, J. P.; Hill, F. E.; Heimlich, M. E.; Driggers, J. M.

    1978-01-01

    Progress in the development of techniques to grow silicon web at 25 wq cm/min output rate is reported. Feasibility of web growth with simultaneous melt replenishment is discussed. Other factors covered include: (1) tests of aftertrimmers to improve web width; (2) evaluation of growth lid designs to raise speed and output rate; (3) tests of melt replenishment hardware; and (4) investigation of directed gas flow systems to control unwanted oxide deposition in the system and to improve convective cooling of the web. Compatibility with sufficient solar cell performance is emphasized.

  15. Silicon carbide sewing thread

    NASA Technical Reports Server (NTRS)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  16. Silicon material task review

    NASA Technical Reports Server (NTRS)

    Lorenz, J. H.

    1986-01-01

    The objectives of the Flat-plate Solar Array (FSA) Project Silicon Material Task are to evaluate technologies, new and old; to develop the most promising technologies; to establish practicality of the processes to meet production, energy use, and economic criteria; and to develop an information base on impurities in polysilicon and to determine their effects on solar cell performance. The approach involves determining process feasibility, setting milestones for the forced selection of the processes, and establishing the technical readiness of the integrated process.

  17. Compensated amorphous silicon solar cell

    DOEpatents

    Carlson, David E.

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  18. Luneburg lens in silicon photonics.

    PubMed

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-03-14

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

  19. The Impact of Silicon Photonics

    DTIC Science & Technology

    2007-08-29

    integrated photonics 16. SECURITY CLASSIFICATION OF: 17.LIMITATION OF ABSTRACT 18.NUMBER OF PAGES 19a. NAME OF RESPONSIBLE PERSON Richard Soref...The impact of present and potential applications is discussed. key words: silicon, optoelectronics, integrated photonics 1. Introduction Silicon

  20. Low cost silicon solar arrays

    NASA Technical Reports Server (NTRS)

    Goldsmith, J. V.; Cleland, J. W.; Westbrook, R. D.; Davis, H. L.; Wood, R. F.; Lindmayer, J.; Wakefield, G. F.

    1975-01-01

    The economic production of silicon solar cell arrays circumvents p-n junction degradation by nuclear doping, in which the Si-30 transmutes to P-31 after thermal neutron capture. Also considered are chemical purity specifications for improved silicon bulk states, surface induced states, and surface states.

  1. Hydrodynamic slip in silicon nanochannels

    NASA Astrophysics Data System (ADS)

    Ramos-Alvarado, Bladimir; Kumar, Satish; Peterson, G. P.

    2016-03-01

    Equilibrium and nonequilibrium molecular dynamics simulations were performed to better understand the hydrodynamic behavior of water flowing through silicon nanochannels. The water-silicon interaction potential was calibrated by means of size-independent molecular dynamics simulations of silicon wettability. The wettability of silicon was found to be dependent on the strength of the water-silicon interaction and the structure of the underlying surface. As a result, the anisotropy was found to be an important factor in the wettability of these types of crystalline solids. Using this premise as a fundamental starting point, the hydrodynamic slip in nanoconfined water was characterized using both equilibrium and nonequilibrium calculations of the slip length under low shear rate operating conditions. As was the case for the wettability analysis, the hydrodynamic slip was found to be dependent on the wetted solid surface atomic structure. Additionally, the interfacial water liquid structure was the most significant parameter to describe the hydrodynamic boundary condition. The calibration of the water-silicon interaction potential performed by matching the experimental contact angle of silicon led to the verification of the no-slip condition, experimentally reported for silicon nanochannels at low shear rates.

  2. Hydrogen-silicon carbide interactions

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Jacobson, Nathan S.; Misra, Ajay K.; Humphrey, Donald L.

    1989-01-01

    A study of the thermochemistry and kinetics of hydrogen environmental attack of silicon carbide was conducted for temperatures in the range from 1100 C to 1400 C. Thermodynamic maps based on the parameters of pressure and oxygen/moisture content were constructed. With increasing moisture levels, four distinct regions of attack were identified. Each region is defined by the thermodynamically stable solid phases. The theoretically stable solid phases of Region 1 are silicon carbide and silicon. Experimental evidence is provided to support this thermodynamic prediction. Silicon carbide is the single stable solid phase in Region 2. Active attack of the silicon carbide in this region occurs by the formation of gases of SiO, CO, CH4, SiH4, and SiH. Analysis of the kinetics of reaction for Region 2 at 1300 C show the attack of the silicon carbide to be controlled by gas phase diffusion of H2O to the sample. Silicon carbide and silica are the stable phases common to Regions 3 and 4. These two regions are characterized by the passive oxidation of silicon carbide and formation of a protective silica layer.

  3. Gettering Silicon Wafers with Phosphorus

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.

    1983-01-01

    Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.

  4. Smoother Scribing of Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Danyluk, S.

    1986-01-01

    Proposed new tool used to scribe silicon wafers into chips more smoothly than before. New scriber produces surface that appears ductile. Scribed groove cuts have relatively smooth walls. Scriber consists of diamond pyramid point on rigid shaft. Ethanol flows through shaft and around point, like ink in ballpoint pen. Ethanol has significantly different effect for scribing silicon than water, used in conventional diamond scribers.

  5. Recent developments in silicon calorimetry

    SciTech Connect

    Brau, J.E.

    1990-11-01

    We present a survey of some of the recent calorimeter applications of silicon detectors. The numerous attractive features of silicon detectors are summarized, with an emphasis on those aspects important to calorimetry. Several of the uses of this technology are summarized and referenced. We consider applications for electromagnetic calorimetry, hadronic calorimetry, and proposals for the SSC.

  6. Cryolite Byproduct in Silicon Production

    NASA Technical Reports Server (NTRS)

    Bartlett, R. W.

    1982-01-01

    Process reacts alumina hydrate with HF and NaF from silicon-production process. Cryolite is produced by adding reaction step to process that makes high-purity silicon from fluorosilicic acid. New extended process has been demonstrated in laboratory and could be used in commercial plants.

  7. In vivo contaminant partitioning to silicone implants: Implications for use in biomonitoring and body burden.

    PubMed

    O'Connell, Steven G; Kerkvliet, Nancy I; Carozza, Susan; Rohlman, Diana; Pennington, Jamie; Anderson, Kim A

    2015-12-01

    Silicone polymers are used for a wide array of applications from passive samplers in environmental studies, to implants used in human augmentation and reconstruction. If silicone sequesters toxicants throughout implantation, it may represent a history of exposure and potentially reduce the body burden of toxicants influencing the risk of adverse health outcomes such as breast cancer. Objectives of this research included identifying a wide variety of toxicants in human silicone implants, and measuring the in vivo absorption of contaminants into silicone and surrounding tissue in an animal model. In the first study, eight human breast implants were analyzed for over 1400 organic contaminants including consumer products, chemicals in commerce, and pesticides. A total of 14 compounds including pesticides such as trans-nonachlor (1.2-5.9ng/g) and p,p'-DDE (1.2-34ng/g) were identified in human implants, 13 of which have not been previously reported in silicone prostheses. In the second project, female ICR mice were implanted with silicone and dosed with p,p'-DDE and PCB118 by intraperitoneal injection. After nine days, silicone and adipose samples were collected, and all implants in dosed mice had p,p'-DDE and PCB118 present. Distribution ratios from silicone and surrounding tissue in mice compare well with similar studies, and were used to predict adipose concentrations in human tissue. Similarities between predicted and measured chemical concentrations in mice and humans suggest that silicone may be a reliable surrogate measure of persistent toxicants. More research is needed to identify the potential of silicone implants to refine the predictive quality of chemicals found in silicone implants.

  8. Silicon supply modifies C:N:P stoichiometry and growth of Phragmites australis.

    PubMed

    Schaller, J; Brackhage, C; Gessner, M O; Bäuker, E; Gert Dudel, E

    2012-03-01

    Silicon is a non-essential element for plant growth. Nevertheless, it affects plant stress resistance and in some plants, such as grasses, it may substitute carbon (C) compounds in cell walls, thereby influencing C allocation patterns and biomass production. How variation in silicon supply over a narrow range affects nitrogen (N) and phosphorus (P) uptake by plants has also been investigated in some detail. However, little is known about effects on the stoichiometric relationships between C, N and P when silicon supply varies over a broader range. Here, we assessed the effect of silicon on aboveground biomass production and C:N:P stoichiometry of common reed, Phragmites australis, in a pot experiment in which three widely differing levels of silicon were supplied. Scanning electron microscopy (SEM) showed that elevated silicon supply promoted silica deposition in the epidermis of Phragmites leaves. This resulted in altered N:P ratios, whereas C:N ratios changed only slightly. Plant growth was slightly (but not significantly) enhanced at intermediate silicon supply levels but significantly decreased at high levels. These findings point to the potential of silicon to impact plant growth and elemental stoichiometry and, by extension, to affect biogeochemical cycles in ecosystems dominated by Phragmites and other grasses and sedges.

  9. Metal/metalloid fixation by litter during decomposition affected by silicon availability during plant growth.

    PubMed

    Schaller, Jörg

    2013-03-01

    Organic matter is known to accumulate high amounts of metals/metalloids, enhanced during the process of decomposition by heterotrophic biofilms (with high fixation capacity for metals/metalloids). The colonization by microbes and the decay rate of the organic matter depends on different litter properties. Main litter properties affecting the decomposition of organic matter such as the nutrient ratios and the content of cellulose, lignin and phenols are currently described to be changed by silicon availability. But less is known about the impact of silicon availability during plant growth on elemental fixation during decay. Hence, this research focuses on the impact of silicon availability during plant growth on fixation of 42 elements during litter decay, by controlling the litter properties. The results of this experiment are a significantly higher metal/metalloid accumulation during decomposition of plant litter grown under low silicon availability. This may be explained by the altered litter properties (mainly nutrient content) affecting the microbial decomposition of the litter, the microbial growth on the litter and possibly by the silicon double layer, which is evident in leaf litter with high silicon content and reduces the binding sites for metals/metalloids. Furthermore, this silicon double layer may also reduce the growing biofilm by reducing the availability of carbon compounds at the litter surface and has to be elucidated in further research. Hence, low silicon availability during plant growth enhances the metal/metalloid accumulation into plant litter during aquatic decomposition.

  10. Compensated amorphous silicon solar cell

    DOEpatents

    Devaud, Genevieve

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  11. Silicone Granulomas, a Growing Problem?

    PubMed Central

    Curreri, Alexis T.; Taylor, Gina A.; Burris, Katy

    2016-01-01

    The formation of granulomas is known to be a possible adverse effect of liquid silicone administration, used for soft tissue augmentation. Its plumping effects provide enhancement of certain body parts, such as the lips, hips, and buttocks. The desire for enhancement, perhaps influenced by popular culture and an unrealistic standard of beauty, leads individuals to seek silicone injections. There is a growing population of women and men receiving injections by unlicensed, unskilled “practitioners” not related to the healthcare profession. Complications under such circumstances are not uncommon, particularly the emergence of silicone granulomas, and the authors’ medical center has seen an increase in such cases. In this case report, the authors illustrate a young patient with significant complications from her silicone injections, review current therapies for silicone granulomas, and discuss this growing medical problem. PMID:27386046

  12. SILICON AND BONE HEALTH

    PubMed Central

    JUGDAOHSINGH, R.

    2009-01-01

    Low bone mass (osteoporosis) is a silent epidemic of the 21st century, which presently in the UK results in over 200,000 fractures annually at a cost of over one billion pounds. Figures are set to increase worldwide. Understanding the factors which affect bone metabolism is thus of primary importance in order to establish preventative measures or treatments for this condition. Nutrition is an important determinant of bone health, but the effects of the individual nutrients and minerals, other than calcium, is little understood. Accumulating evidence over the last 30 years strongly suggest that dietary silicon is beneficial to bone and connective tissue health and we recently reported strong positive associations between dietary Si intake and bone mineral density in US and UK cohorts. The exact biological role(s) of silicon in bone health is still not clear, although a number of possible mechanisms have been suggested, including the synthesis of collagen and/or its stabilization, and matrix mineralization. This review gives an overview of this naturally occurring dietary element, its metabolism and the evidence of its potential role in bone health. PMID:17435952

  13. Micromachined silicon seismic transducers

    SciTech Connect

    Barron, C.C.; Fleming, J.G.; Sniegowski, J.J.; Armour, D.L.; Fleming, R.P.

    1995-08-01

    Batch-fabricated silicon seismic transducers could revolutionize the discipline of CTBT monitoring by providing inexpensive, easily depolyable sensor arrays. Although our goal is to fabricate seismic sensors that provide the same performance level as the current state-of-the-art ``macro`` systems, if necessary one could deploy a larger number of these small sensors at closer proximity to the location being monitored in order to compensate for lower performance. We have chosen a modified pendulum design and are manufacturing prototypes in two different silicon micromachining fabrication technologies. The first set of prototypes, fabricated in our advanced surface- micromachining technology, are currently being packaged for testing in servo circuits -- we anticipate that these devices, which have masses in the 1--10 {mu}g range, will resolve sub-mG signals. Concurrently, we are developing a novel ``mold`` micromachining technology that promises to make proof masses in the 1--10 mg range possible -- our calculations indicate that devices made in this new technology will resolve down to at least sub-{mu}G signals, and may even approach to 10{sup {minus}10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  14. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Chemical engineering analysis was continued for the HSC process (Hemlock Semiconductor Corporation) in which solar cell silicon is produced in a 1,000 MT/yr plant. Progress and status are reported for the primary engineering activities involved in the preliminary process engineering design of the plant base case conditions (96%), reaction chemistry (96%), process flow diagram (85%), material balance (85%), energy balance (60%), property data (60%), equipment design (40%), major equipment list (30%) and labor requirements (10%). Engineering design of the second distillation column (D-02, TCS column) in the process was completed. The design is based on a 97% recovery of the light key (TCS, trichlorosilane) in the distillate and a 97% recovery of the heavy key (TET, silicon tetrachloride) in the bottoms. At a reflux ratio of 2, the specified recovery of TCS and TET is achieved with 20 trays (equilibrium stages, N=20). Respective feed tray locations are 9, 12 and 15 (NF sub 1 = 9, NF sub 2 = 12,, and NF sub 3 = 15). A total condenser is used for the distillation which is conducted at a pressure of 90 psia.

  15. Silicon and bone health.

    PubMed

    Jugdaohsingh, R

    2007-01-01

    Low bone mass (osteoporosis) is a silent epidemic of the 21st century, which presently in the UK results in over 200,000 fractures annually at a cost of over one billion pounds. Figures are set to increase worldwide. Understanding the factors which affect bone metabolism is thus of primary importance in order to establish preventative measures or treatments for this condition. Nutrition is an important determinant of bone health, but the effects of the individual nutrients and minerals, other than calcium, is little understood. Accumulating evidence over the last 30 years strongly suggest that dietary silicon is beneficial to bone and connective tissue health and we recently reported strong positive associations between dietary Si intake and bone mineral density in US and UK cohorts. The exact biological role(s) of silicon in bone health is still not clear, although a number of possible mechanisms have been suggested, including the synthesis of collagen and/or its stabilization, and matrix mineralization. This review gives an overview of this naturally occurring dietary element, its metabolism and the evidence of its potential role in bone health.

  16. Design, Synthesis, and Identification of Silicon Incorporated Oxazolidinone Antibiotics with Improved Brain Exposure

    PubMed Central

    2015-01-01

    Therapeutic options for brain infections caused by pathogens with a reduced sensitivity to drugs are limited. Recent reports on the potential use of linezolid in treating brain infections prompted us to design novel compounds around this scaffold. Herein, we describe the design and synthesis of various oxazolidinone antibiotics with the incorporation of silicon. Our findings in preclinical species suggest that silicon incorporation is highly useful in improving brain exposures. Interestingly, three compounds from this series demonstrated up to a 30-fold higher brain/plasma ratio when compared to linezolid thereby indicating their therapeutic potential in brain associated disorders. PMID:26617962

  17. Crystalline silicon growth in nickel/a-silicon bilayer

    SciTech Connect

    Mohiddon, Md Ahamad; Naidu, K. Lakshun; Dalba, G.; Rocca, F.; Krishna, M. Ghanashyam

    2013-02-05

    The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 Degree-Sign C. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature.

  18. Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

    NASA Technical Reports Server (NTRS)

    1979-01-01

    The results of a study for Task 3 of the Low Cost Solar Array Project, directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicon based materials, are reported. Results of the following are discussed: (1) weather-ometer stressing vs. weathering history of silicon and silicon modified materials; (2) humidity/temperature cycling exposure; (3) exposure at high humidity/high temperature; (4) outdoor exposure stress; (5) thermal cycling stress; and (6) UV screening agents. The plans for the next quarter are outlined.

  19. Evaluation of a compound eye type tactile endoscope

    NASA Astrophysics Data System (ADS)

    Yoshimoto, Kayo; Yamada, Kenji; Sasaki, Nagisa; Takeda, Maki; Shimizu, Sachiko; Nagakura, Toshiaki; Takahashi, Hideya; Ohno, Yuko

    2013-03-01

    Minimally invasive surgical techniques for endoscope become widely used, for example, laparoscopic operation, NOTES (Natural Orifice Translumenal Endoscopic Surgery), robotic surgery and so on. There are so many demand and needs for endoscopic diagnosis. Especially, palpation is most important diagnosis on any surgery. However, conventional endoscopic system has no tactile sensibility. There are many studies about tactile sensor for medical application. These sensors can measure object at a point. It is necessary to sense in areas for palpation. To overcome this problem, we propose compound eye type tactile endoscope. The proposed system consists of TOMBO (Thin Observation Module by Bound Optics) and clear silicon rubber. Our proposed system can estimate hardness of target object by measuring deformation of a projected pattern on the silicon rubber. The purpose of this study is to evaluate the proposed system. At first, we introduce approximated models of the silicone and the object. We formulate the stiffness of object, the deformation of silicone, and the whole object. We investigate the accuracy of measured silicone's lower surface for deformation of silicone by prototype system. Finally, we evaluate the calculated stiffness of the soft object.

  20. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  1. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  2. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOEpatents

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  3. Friction, wear, and thermal stability studies of some organotin and organosilicon compounds

    NASA Technical Reports Server (NTRS)

    Jones, W. R., Jr.

    1973-01-01

    Thermal decomposition temperatures were determined for a number of organotin and organosilicon compounds. A ball-on-disk sliding friction apparatus was used to determine the friction and wear characteristics of two representative compounds, (1) 3-tri-n-butylstannyl (diphenyl) and (2) 3-tri-n-butylsilyl (diphenyl). Friction and wear test conditions included a 1-kg load, 25 to 225 C disk temperatures, and a dry air atmosphere. The tin and silicon compounds yielded friction and wear results either lower than or similar to those obtained with a polyphenyl ether and a C-ether. The maximum thermal decomposition temperatures obtained in the silicon and tin series were 358 and 297 C, respectively. Increasing the steric hindrance around the silicon or tin atoms increased the thermal stability. Future work with these compounds will emphasize their use as antiwear additives rather than base fluids.

  4. Silicene: silicon conquers the 2D world

    NASA Astrophysics Data System (ADS)

    Le Lay, Guy; Salomon, Eric; Angot, Thierry

    2016-01-01

    We live in the digital age based on the silicon chip and driven by Moore's law. Last July, IBM created a surprise by announcing the fabrication of a 7 nm test chip with functional transistors using, instead of just silicon, a silicon-germanium alloy. Will silicon be dethroned?

  5. PREPARATION AND PURIFICATION OF SILICON CARBIDE.

    DTIC Science & Technology

    the materials were divided into two parts. Part I covers problems of silicon carbide preparation and the growing of silicon carbide single crystals...and thin films for semiconductor devices. Part II treats problems of purity, including the purification and chemical analysis of silicon carbide and of starting materials for silicon carbide preparation.

  6. Ceramic for Silicon-Shaping Dies

    NASA Technical Reports Server (NTRS)

    Sekercioglu, I.; Wills, R. R.

    1982-01-01

    Silicon beryllium oxynitride (SiBON) is a promising candidate material for manufacture of shaping dies used in fabricating ribbons or sheets of silicon. It is extremely stable, resists thermal shock, and has excellent resistance to molten silicon. SiBON is a solid solution of beryllium silicate in beta-silicon nitride.

  7. Oxide Control for Silicon Crystal Growth

    NASA Technical Reports Server (NTRS)

    Wehrli, H. A. I.

    1982-01-01

    Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.

  8. Determination of Silicon in Hydrazine

    NASA Technical Reports Server (NTRS)

    McClure, Mark B.; Mast, Dion; Greene, Ben; Maes, Miguel J.

    2006-01-01

    Inductively coupled plasma-mass spectrometry (ICP-MS) is a highly sensitive technique sometimes used for the trace determination of silicon at a mass-to-charge (m/z) ratio of 28, the most abundant natural isotope of silicon. Unfortunately, ICP-MS is unable to differentiate between other sources of m/z 28 and false positive results for silicon will result when other sources of m/z 28 are present. Nitrogen was a major source of m/z 28 and contributes to the m/z 28 signal when hydrazine sample or nitric acid preservative is introduced into the plasma. Accordingly, this work was performed to develop a sample preparation step coupled with an ICP-MS analysis that minimized non-silicon sources of m/z 28. In the preparatory step of this method, the hydrazine sample was first decomposed predominately to nitrogen gas and water with copper-catalyzed hydrogen peroxide. In the analysis step, ICP-MS was used without nitric acid preservative in samples or standards. Glass, a potential source of silicon contamination, was also avoided where possible. The method was sensitive, accurate, and reliable for the determination of silicon in monopropellant grade hydrazine (MPH) in AF-E-332 elastomer leaching tests. Results for silicon in MPH were comparable to those reported in the literature for other studies.

  9. Lipid membranes on nanostructured silicon.

    SciTech Connect

    Slade, Andrea Lynn; Lopez, Gabriel P.; Ista, Linnea K.; O'Brien, Michael J.; Sasaki, Darryl Yoshio; Bisong, Paul; Zeineldin, Reema R.; Last, Julie A.; Brueck, Stephen R. J.

    2004-12-01

    A unique composite nanoscale architecture that combines the self-organization and molecular dynamics of lipid membranes with a corrugated nanotextured silicon wafer was prepared and characterized with fluorescence microscopy and scanning probe microscopy. The goal of this project was to understand how such structures can be assembled for supported membrane research and how the interfacial interactions between the solid substrate and the soft, self-assembled material create unique physical and mechanical behavior through the confinement of phases in the membrane. The nanometer scale structure of the silicon wafer was produced through interference lithography followed by anisotropic wet etching. For the present study, a line pattern with 100 nm line widths, 200 nm depth and a pitch of 360 nm pitch was fabricated. Lipid membranes were successfully adsorbed on the structured silicon surface via membrane fusion techniques. The surface topology of the bilayer-Si structure was imaged using in situ tapping mode atomic force microscopy (AFM). The membrane was observed to drape over the silicon structure producing an undulated topology with amplitude of 40 nm that matched the 360 nm pitch of the silicon structure. Fluorescence recovery after photobleaching (FRAP) experiments found that on the microscale those same structures exhibit anisotropic lipid mobility that was coincident with the silicon substructure. The results showed that while the lipid membrane maintains much of its self-assembled structure in the composite architecture, the silicon substructure indeed influences the dynamics of the molecular motion within the membrane.

  10. High specific activity silicon-32

    DOEpatents

    Phillips, Dennis R.; Brzezinski, Mark A.

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  11. High specific activity silicon-32

    DOEpatents

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  12. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  13. Process for forming retrograde profiles in silicon

    DOEpatents

    Weiner, Kurt H.; Sigmon, Thomas W.

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  14. Silicon Nanowire Photocathodes for Photoelectrochemical Hydrogen Production

    PubMed Central

    Chandrasekaran, Soundarrajan; Nann, Thomas; Voelcker, Nicolas H.

    2016-01-01

    The performance of silicon for water oxidation and hydrogen production can be improved by exploiting the antireflective properties of nanostructured silicon substrates. In this work, silicon nanowires were fabricated by metal-assisted electroless etching of silicon. An enhanced photocurrent density of −17 mA/cm2 was observed for the silicon nanowires coated with an iron sulphur carbonyl catalyst when compared to bare silicon nanowires (−5 mA/cm2). A substantial amount of 315 µmol/h hydrogen gas was produced at low bias potentials for the silicon nanowires coated with an iron sulphur carbonyl catalyst. PMID:28335272

  15. Bonding analysis of planar hypercoordinate atoms via the generalized BLW-LOL.

    PubMed

    Bomble, Laetitia; Steinmann, Stephan N; Perez-Peralta, Nancy; Merino, Gabriel; Corminboeuf, Clemence

    2013-10-05

    The multicenter bonding pattern of the intriguing hexa-, hepta-, and octacoordinate boron wheel series (e.g., CB62-, CB7-, B82-, and SiB8 as well as the experimentally detected CB7- isomer) is revised using the block-localized wave function analyzed by the localized orbital locator (BLW-LOL). The more general implementation of BLW combined with the LOL scalar field is not restricted to the analysis of the out-of-plane π-system but can also provide an intuitive picture of the σ-radial delocalization and of the role of the central atom. The results confirm the presence of a π-ring current pattern similar to that of benzene. In addition, the LOLπ isosurfaces along with the maximum intensity in the ΔLOL profiles located above and below the ring suggest that the central atom plays a minor role in the π-delocalized bonding pattern. Finally, the analysis of the σ-framework in these boron wheels is in line with a moderated inner cyclic rather than disk-type delocalization.

  16. Silicon: Child and Progenitor of Revolution

    NASA Astrophysics Data System (ADS)

    Cahn, R. W.

    Antoine Lavoisier, the pioneering French chemist who (together with Joseph Priestley in England) identified oxygen as an element and gave it its name, in 1789 concluded that quartz was probably a compound with an as-yet undiscovered but presumably extremely common element. That was also the year in which the French Revolution broke out. Five years later, the Jacobins accused Lavoisier of offences against the people and cut off his head, thereby nearly cutting off the new chemistry. It was not until 1824 that Jöns Berzelius in Sweden succeeded in confirming Lavoisier's speculation by isolating silicon. Argument at once broke out among the scientific elite as to whether the newly found element was a metal or an insulator. It took more than a century to settle that disagreement decisively: As so often, when all-or-nothing alternatives are fiercely argued, the truth turned out to be neither all nor nothing.

  17. Fabrication and characterization of porous silicon nanowires

    NASA Astrophysics Data System (ADS)

    Jung, Daeyoon; Cho, Soo Gyeong; Moon, Taeho; Sohn, Honglae

    2016-01-01

    We report the synthesis of porous silicon nanowires through the metalassisted chemical etching of porous silicon in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of porous silicon nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The etch rate of the porous silicon nanowires was faster than that of silicon nanowires, but slower than that of porous silicon. The porous silicon nanowires distributed uniformly on the entire porous silicon layer and the tips of the porous silicon nanowires congregated together. The single crystalline and sponge-like porous structure with the pore diameters of less than 5 nm was confirmed for the porous silicon nanowires. [Figure not available: see fulltext.

  18. Single crystalline mesoporous silicon nanowires.

    PubMed

    Hochbaum, Allon I; Gargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-10-01

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  19. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  20. Ultra-fast silicon detectors

    NASA Astrophysics Data System (ADS)

    Sadrozinski, H. F.-W.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Marchetto, F.; Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A.

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R&D topics are discussed.

  1. Develop Silicone Encapsulation Systems for Terrestrial Silicon Solar Arrays

    NASA Technical Reports Server (NTRS)

    1979-01-01

    A cost effective encapsulant system was identified and a silicone acrylic cover material containing a durable ultraviolet screening agent was prepared. The effectiveness of the cover material in protecting photo-oxidatively sensitive polymers was demonstrated.

  2. Micromechanical silicon precision scale

    NASA Astrophysics Data System (ADS)

    Oja, Aarne S.; Sillanpaa, Teuvo; Seppae, H.; Kiihamaki, Jyrki; Seppala, P.; Karttunen, Jani; Riski, Kari

    2000-04-01

    A micro machined capacitive silicon scale has been designed and fabricated. It is intended for weighing masses on the order of 1 g at the resolution of about 1 ppm and below. The device consists of a micro machined SOI chip which is anodically bonded to a glass chip. The flexible electrode is formed in the SOI device layer. The other electrode is metallized on the glass and is divided into three sections. The sections are used for detecting tilting of the top electrode due to a possible off-centering of the mass load. The measuring circuit implements electrostatic force feedback and keeps the top electrode at a constant horizontal position irrespective of its mass loading. First measurements have demonstrated the stability allowing measurement of 1 g masses at an accuracy of 2...3 ppm.

  3. Silicon production process evaluations

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for producing silicon from dichlorosilane in a 1,000 MT/yr plant was continued. Progress and status for the chemical engineering analysis of the HSC process are reported for the primary process design engineering activities: base case conditions (85%), reaction chemistry (85%), process flow diagram (60%), material balance (60%), energy balance (30%), property data (30%), equipment design (20%) and major equipment list (10%). Engineering design of the initial distillation column (D-01, stripper column) in the process was initiated. The function of the distillation column is to remove volatile gases (such as hydrogen and nitrogen) which are dissolved in liquid chlorosilanes. Initial specifications and results for the distillation column design are reported including the variation of tray requirements (equilibrium stages) with reflux ratio for the distillation.

  4. Silicon tracker data acquisition

    SciTech Connect

    Haynes, W.J.

    1997-12-31

    Large particle physics experiments are making increasing technological demands on the design and implementation of real-time data acquisition systems. The LHC will have bunch crossing intervals of 25 nanoseconds and detectors, such as CMS, will contain over 10 million electronic channels. Readout systems will need to cope with 100 kHz rates of 1 MByte-sized events. Over 70% of this voluminous flow will stem from silicon tracker and MSGC devices. This paper describes the techniques currently being harnessed from ASIC devices through to modular microprocessor-based architectures around standards such as VMEbus and PCI. In particular, the experiences gained at the HERA H1 experiment are highlighted where many of the key technological concepts have already been im implemented.

  5. The ISOLDE Silicon Ball

    SciTech Connect

    Fraile, L.M.

    2003-09-16

    The investigation of weakly bound nuclei close to the particle driplines makes necessary the development of new spectroscopy devices with the capability of detecting charged particles and precisely determining their energy, angular distribution and nature. With this aim the ISOLDE Silicon Ball is under construction. It is a charged particle spectroscopy device with the requirements of high geometrical efficiency and broad energy range coverage, designed for the investigation of the exotic nuclei produced at ISOLDE and at other similar facilities. In order to allow for particle identification the simultaneous use of the Time of Flight (TOF) and Pulse Shape Discrimination (PSD) techniques is intended. Recoil tagging capabilities, suitable for transfer reactions to be performed at REX-ISOLDE, should be foreseen for a future development. The design and realization of the first prototype, together with the first tests are reported.

  6. Crystallization of Silicon Ribbons

    NASA Technical Reports Server (NTRS)

    Leipold, M. H.

    1984-01-01

    Purity constraints for reasonable solar-cell efficiency require that silicon-ribbon growth for photovoltaics occur in a regime in which constitutional supercooling or other compositional effects on the crystallization front are not important. A major consideration in the fundamentals of crystallization is the removal of the latent heat of fusion. The direction of removal, compared with the growth direction, has a major influence on the crystallization rate and the development of localized stresses. The detailed shape of the crystallization front appears to have two forms: that required for dendritic-web growth, and that occurring in all others. After the removal of the latent heat of fusion, the thermal-mechanical behavior of all ribbons appears similar within the constraints of the exothermal gradient. The technological constraints in achieving the required thermal and mechanical conditions vary widely among the growth processes.

  7. Monolithic silicon bolometers

    NASA Technical Reports Server (NTRS)

    Downey, P. M.; Jeffries, A. D.; Meyer, S. S.; Weiss, R.; Bachner, F. J.; Donnelly, J. P.; Lindley, W. T.; Mountain, R. W.; Silversmith, D. J.

    1984-01-01

    A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

  8. Silicon force sensor

    DOEpatents

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  9. Silicon Carbide Nanotube Synthesized

    NASA Technical Reports Server (NTRS)

    Lienhard, Michael A.; Larkin, David J.

    2003-01-01

    Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

  10. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  11. Integrated silicon and silicon nitride photonic circuits on flexible substrates.

    PubMed

    Chen, Yu; Li, Mo

    2014-06-15

    Flexible integrated photonic devices based on crystalline materials on plastic substrates have a promising potential in many unconventional applications. In this Letter, we demonstrate a fully integrated photonic system including ring resonators and grating couplers, based on both crystalline silicon and silicon nitride, on flexible plastic substrate by using the stamping-transfer method. A high yield has been achieved by a simple, yet reliable transfer method without significant performance degradation.

  12. Corrosion Characteristics of Silicon Carbide and Silicon Nitride

    PubMed Central

    Munro, R. G.; Dapkunas, S. J.

    1993-01-01

    The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

  13. Composition, process, and apparatus, for removal of water and silicon mu-oxides from chlorosilanes

    DOEpatents

    Tom, Glenn M.; McManus, James V.

    1991-10-15

    A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4"y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

  14. Process for removal of water and silicon mu-oxides from chlorosilanes

    DOEpatents

    Tom, Glenn M.; McManus, James V.

    1992-03-10

    A scavenger composition having utility for removal of water and silicon mu-oxide impurities from chlorosilanes, such scavenger composition comprising: (a) a support; and (b) associated with the support, one or more compound(s) selected from the group consisting of compounds of the formula: R.sub.a-x MCl.sub.x wherein: M is a metal selected from the group consisting of the monovalent metals lithium, sodium, and potassium; the divalent metals magnesium, strontium, barium, and calcium; and the trivalent metal aluminum; R is alkyl; a is a number equal to the valency of metal M; and x is a number having a value of from 0 to a, inclusive; and wherein said compound(s) of the formula R.sub.a-x MCl.sub.x have been activated for impurity-removal service by a reaction scheme selected from those of the group consisting of: (i) reaction of such compound(s) with hydrogen chloride to form a first reaction product therefrom, followed by reaction of the first reaction product with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y, wherein y is a number having a value of from 1 to 3, inclusive; and (ii) reaction of such compound(s) with a chlorosilane of the formula: SiH.sub.4-y Cl.sub.y wherein y is a number having a value of 1 to 3, inclusive. A corresponding method of making the scavenger composition, and of purifying a chlorosilane which contains oxygen and silicon mu-oxide impurities, likewise are disclosed, together with a purifier apparatus, in which a bed of the scavenger composition is disposed. The composition, purification process, and purifier apparatus of the invention have utility in purifying gaseous chlorosilanes which are employed in the semiconductor industry as silicon source reagents for forming epitaxial silicon layers.

  15. Interior phase transformations and mass-radius relationships of silicon-carbon planets

    SciTech Connect

    Wilson, Hugh F.; Militzer, Burkhard

    2014-09-20

    Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure, and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.

  16. Method of forming buried oxide layers in silicon

    DOEpatents

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  17. Silicone Cerenkov-Radiator Material

    NASA Technical Reports Server (NTRS)

    Balasubrahmanyan, V.; Ormes, J. F.; Streitmatter, R. E.

    1984-01-01

    Dyes enhance visible output. Three fluorescent dyes combine to increase output of silicone material that normally has low yield of visible Cerenkov radiation by converting large amount of available ultraviolet photons into visible light.

  18. RF shaping of silicon ribbon

    NASA Technical Reports Server (NTRS)

    Pelhank, D. A.; Rochat, R. D.; Marx, W.

    1976-01-01

    Electromagnetic force generated by radiofrequency coil is used to shape molten silicon. Shaping coil surrounds melt near solid-liquid interface and induces current in surface region of melt nearly equal to but opposite coil current.

  19. Removing Silicone Grease from Glassware

    NASA Astrophysics Data System (ADS)

    Lowry, Thomas H.

    1997-07-01

    A recent note in this Journal (1) described the use of 5% aqueous hydrofluoric acid for removing silicone grease residues from round-bottom flasks. A safer and more convenient alternative is a saturated solution of sodium hydroxide in ethanol.

  20. LASER DESORPTION IONIZATION MASS SPECTROMETRY ON SILICON NANOWELL ARRAYS

    PubMed Central

    Gulbakan, Basri; Park, Dooho; Kang, Myungchan; Kececi, Kaan; Martin, Charles R.; Powell, David H.; Tan, Weihong

    2010-01-01

    This paper describes a new technique for fabrication of nanostructured porous silicon (pSi) for laser desorption ionization mass spectrometry. Porous silicon nanowell arrays were prepared by argon plasma etching through an alumina mask. Porous silicon prepared in this way proved to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS) using adenosine, Pro-Leu-Gly tripeptide and [Des-Arg9]-bradykinin as the model compounds. It also allows the analyses of complex biological samples such as a tryptic digest of bovine serum albumin, and a carnitine standard mixture. Nanowell array surfaces were also used for direct quantification of the illicit drug fentanyl in red blood cell extracts. This method also allows full control of the surface features. MS results suggested that the pore depth has significant effect on the ion signals. Significant improvement in the ionization was observed by increasing the pore depth from 10 nm to 50 nm. These substrates are useful for laser desorption ionization in both the atmospheric pressure and vacuum regimes. PMID:20731384

  1. Silicon solar cells: Past, present and the future

    NASA Astrophysics Data System (ADS)

    Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

    2014-08-01

    There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

  2. Laser desorption ionization mass spectrometry on silicon nanowell arrays.

    PubMed

    Gulbakan, Basri; Park, Dooho; Kang, Myungchan; Kececi, Kaan; Martin, Charles R; Powell, David H; Tan, Weihong

    2010-09-15

    This paper describes a new technique for fabrication of nanostructured porous silicon (pSi) for laser desorption ionization mass spectrometry. Porous silicon nanowell arrays were prepared by argon plasma etching through an alumina mask. Porous silicon prepared in this way proved to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS) using adenosine, Pro-Leu-Gly tripeptide, and [Des-Arg(9)]-bradykinin as the model compounds. It also allows the analyses of complex biological samples such as a tryptic digest of bovine serum albumin and a carnitine standard mixture. Nanowell array surfaces were also used for direct quantification of the illicit drug fentanyl in red blood cell extracts. This method also allows full control of the surface features. MS results suggested that the pore depth has a significant effect on the ion signals. Significant improvement in the ionization was observed by increasing the pore depth from 10 to 50 nm. These substrates are useful for laser desorption ionization in both the atmospheric pressure and vacuum regimes.

  3. Intrinsic Magnetism at Silicon Surfaces

    DTIC Science & Technology

    2010-08-24

    localized at silicon step edges having the form of graphitic ribbons. The predicted magnetic state is supported by recent experimental observations... carbon , silicon and oxygen — can also reveal unpaired elec- trons when covalent bonds are broken. In defective or disordered group IV solids, the single...investigated for magnetism experimentally, but we show below that existing data already support it indirectly. Results Spin polarization at graphitic steps

  4. Lung embolism with liquid silicone.

    PubMed

    Rodríguez, M A; Martínez, M C; Lopez-Artíguez, M; Soria, M L; Bernier, F; Repetto, M

    1989-03-01

    A lung embolism was reported in a case involving death following repeated injections of liquid silicone for aesthetic reasons. The liquid extracted from the sites of injection was identified as methylsilicone using infrared spectrophotometry, and the presence of silicone in vacuoles in the lung was verified by scanning electron microscopy with energy dispersive X-ray analysis (EDXA). A study has been carried out with rats after intravenous and subcutaneous injections of methylsilicone.

  5. Silicone nanocomposite coatings for fabrics

    NASA Technical Reports Server (NTRS)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  6. Low cost silicon solar arrays

    NASA Technical Reports Server (NTRS)

    Ravi, K. V.; Serreze, H. B.; Bates, H. E.; Morrison, A. D.; Jewett, D. N.; Ho, J. C. T.; Schwuttke, G. H.; Ciszek, T. F.; Kran, A.

    1975-01-01

    Continuous growth methodology for silicon solar cell ribbons deals with capillary effects, die effects, thermal effects and crystal shape effects. Emphasis centers on the shape of the meniscus at the ribbon edge as a factor contributing to ribbon quality with respect to defect densities. Structural and electrical characteristics of edge defined, film-fed grown silicon ribbons are elaborated. Ribbon crystal solar cells produce AMO efficiencies of 6 to 10%.

  7. Silicon superconducting quantum interference device

    SciTech Connect

    Duvauchelle, J. E.; Francheteau, A.; Marcenat, C.; Lefloch, F.; Chiodi, F.; Débarre, D.; Hasselbach, K.; Kirtley, J. R.

    2015-08-17

    We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

  8. Metallization of Large Silicon Wafers

    NASA Technical Reports Server (NTRS)

    Pryor, R. A.

    1978-01-01

    A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

  9. Silicone-Rubber Stitching Seal

    NASA Technical Reports Server (NTRS)

    Wang, D. S.

    1985-01-01

    Fabric products protected from raveling by coating threads and filling stitching holes with silicone rubber. Uncored silicone rubber applied to stitching lines with air-pressurized sealant gun. Next, plastic release film placed on coated side, and blanket flipped over so release film lies underneath. Blanket then bagged and adhesive cured under partial vacuum of about 3.5 psi or under pressure. Applications include balloons, parachutes, ultralight aircraft, sails, rescue harnesses, tents, or other fabric products highly stressed in use.

  10. Silicon Hot-Electron Bolometers

    NASA Technical Reports Server (NTRS)

    Stevenson, Thomas R.; Hsieh, Wen-Ting; Mitchell, Robert R.; Isenberg, Hal D.; Stahle, Carl M.; Cao, Nga T.; Schneider, Gideon; Travers, Douglas E.; Moseley, S. Harvey; Wollack, Edward J.

    2004-01-01

    We discuss a new type of direct detector, a silicon hot-electron bolometer, for measurements in the far-infrared and submillimeter spectral ranges. High performance bolometers can be made using the electron-phonon conductance in heavily doped silicon to provide thermal isolation from the cryogenic bath. Noise performance is expected to be near thermodynamic limits, allowing background limited performance for many far infrared and submillimeter photometric and spectroscopic applications.

  11. Ground based silicon zoning program

    NASA Technical Reports Server (NTRS)

    Kern, E. L.

    1981-01-01

    The preparation of building flight hardware and carrying out experiments in space was investigated. The ground based investigation phase A/B of the experimental float zoning of silicon is outlined. The overall program goals, leading to recommending experiments to be done in phase C/D are spelled out. Thermophysical properties which must be accurately known to compare thermophysical models to experimental zoning of silicon are listed.

  12. Magnetically retained silicone facial prosthesis.

    PubMed

    Venugopalan, S; Ariga, P; Aggarwal, P; Viswanath, A

    2014-01-01

    Patients with orocutaneous fistulas suffer from discomfort in terms of facial esthetics, food spill over and lack of psychological confidence to present them socially. Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention.

  13. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.

    PubMed

    Park, Jae-Min; Jang, Se Jin; Yusup, Luchana L; Lee, Won-Jun; Lee, Sang-Ick

    2016-08-17

    We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH3 groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N2 plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.

  14. Polycrystalline silicon on tungsten substrates

    NASA Technical Reports Server (NTRS)

    Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

    1979-01-01

    Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

  15. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  16. Configurational statistical model for the damaged structure of silicon oxide after ion implantation

    NASA Astrophysics Data System (ADS)

    Garrido, B.; Samitier, J.; Morante, J. R.; Montserrat, J.; Domínguez, C.

    1994-06-01

    A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.

  17. Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint

    SciTech Connect

    Buonassisi, T.; Marcus, M. A.; Istratov, A. A.; Heuer, M.; Ciszek, T. F.; Lai, B.; Cai, Z.; Weber, E. R.

    2004-08-01

    the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.

  18. Bio-inspired hemispherical compound eye camera

    NASA Astrophysics Data System (ADS)

    Xiao, Jianliang; Song, Young Min; Xie, Yizhu; Malyarchuk, Viktor; Jung, Inhwa; Choi, Ki-Joong; Liu, Zhuangjian; Park, Hyunsung; Lu, Chaofeng; Kim, Rak-Hwan; Li, Rui; Crozier, Kenneth B.; Huang, Yonggang; Rogers, John A.

    2014-03-01

    Compound eyes in arthropods demonstrate distinct imaging characteristics from human eyes, with wide angle field of view, low aberrations, high acuity to motion and infinite depth of field. Artificial imaging systems with similar geometries and properties are of great interest for many applications. However, the challenges in building such systems with hemispherical, compound apposition layouts cannot be met through established planar sensor technologies and conventional optics. We present our recent progress in combining optics, materials, mechanics and integration schemes to build fully functional artificial compound eye cameras. Nearly full hemispherical shapes (about 160 degrees) with densely packed artificial ommatidia were realized. The number of ommatidia (180) is comparable to those of the eyes of fire ants and bark beetles. The devices combine elastomeric compound optical elements with deformable arrays of thin silicon photodetectors, which were fabricated in the planar geometries and then integrated and elastically transformed to hemispherical shapes. Imaging results and quantitative ray-tracing-based simulations illustrate key features of operation. These general strategies seem to be applicable to other compound eye devices, such as those inspired by moths and lacewings (refracting superposition eyes), lobster and shrimp (reflecting superposition eyes), and houseflies (neural superposition eyes).

  19. Direct Production of Silicones From Sand

    SciTech Connect

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  20. Silicon active photonic devices

    NASA Astrophysics Data System (ADS)

    Dimitropoulos, Dimitrios

    Active photonic devices utilizing the optical nonlinearities of silicon have emerged in the last 5 years and the effort for commercial photonic devices in the material that has been the workhorse of electronics has been building up since. This dissertation presents the theory for some of these devices. We are concerned herein with CW lasers, amplifiers and wavelength converters that are based on the Raman effect. There have already been cursory experimental demonstrations of these devices and some of their limitations are already apparent. Most of the limitations observed are because of the appearance of effects that are competing with stimulated Raman scattering. Under the high optical powers that are necessary for the Raman effect (tens to hundrends of mW's) the process of optical two-photon (TPA) absorption occurs. The absorption of optical power that it causes itself is weak but in the process electrons and holes are generated which can further absorb light through the free-carrier absorption effect (FCA). The effective "lifetime" that these carriers have determines the magnitude of the FCA loss. We present a model for the carrier lifetime in Silicon-On-Insulator (SOI) waveguides and numerical simulations to understand how this critical parameter varies and how it can be controlled. A p-i-n junction built along SOI waveguides can help achieve lifetime of the order of 20--100 ps but the price one has to pay is on-chip electrical power consumption on the order of 100's of mWs. We model CW Raman lasers and we find that the carrier lifetime reduces the output power. If the carrier lifetime exceeds a certain "critical" value optical losses become overwhelming and lasing is impossible. As we show, in amplifiers, the nonlinear loss does not only result in diminished gain, but also in a higher noise figure. Finally the effect of Coherent anti-Stokes Raman scattering (CARS) is examined. The effect is important because with a pump frequency at 1434nm coherent power

  1. Field Evaluation of Anti-Biofouling Compounds on Optical Instrumentation

    NASA Technical Reports Server (NTRS)

    McLean, Scott; Schofield, Bryan; Zibordi, Giuseppe; Lewis, Marlon; Hooker, Stanford; Weidemann, Alan

    1997-01-01

    Biofouling has been a serious question in the stability of optical measurements in the ocean, particularly in moored and drifting buoy applications. Many investigators coat optical surfaces with various compounds to reduce the amount of fouling; to our knowledge, however, there are no objective, in-situ comparative testing of these compounds to evaluate their effectiveness with respect to optical stability relative to untreated controls. We have tested a wide range of compounds at in-situ locations in Halifax Harbour and in the Adriatic Sea on passive optical sensors. Compounds tested include a variety of TBT formulations, antifungal agents, and low-friction silicone-based compounds; time-scales of up to four months were evaluated. The results of these experiments are discussed.

  2. Preparation of porous n-type silicon sample plates for desorption/ionization on silicon mass spectrometry (DIOS-MS).

    PubMed

    Tuomikoski, S; Huikko, K; Grigoras, K; Ostman, P; Kostiainen, R; Baumann, M; Abian, J; Kotiaho, T; Franssila, S

    2002-11-01

    This study focuses on porous silicon (pSi) fabrication methods and properties for desorption ionization on silicon mass spectrometry (DIOS-MS). PSi was prepared using electrochemical etching of n-type silicon in HF-ethanol solution. Porous areas were defined by a double-sided illumination arrangement: front-side porous areas were masked by a stencil mask, eliminating the need for standard photolithography, and backside illumination was used for the backside ohmic contact. Backside illumination improved the uniformity of the porosified areas. Porosification conditions, surface derivatizations and storage conditions were explored to optimize pSi area, pore size and pore depth. Chemical derivatization of the pSi surfaces improved the DIOS-MS performance providing better ionization efficiency and signal stability with lower laser energy. Droplet spreading and drying patterns on pSi were also examined. Pore sizes of 50-200 nm were found to be optimal for droplet evaporation and pore filling with the sample liquid, as measured by DIOS efficiency. With DIOS, significantly better detection sensitivity was obtained (e.g. 150 fmol for midazolam) than with desorption ionization from a standard MALDI steel plate without matrix addition (30 pmol for midazolam). Also the noise that disturbs the detection of low-molecular weight compounds at m/z < 500 with MALDI could be clearly reduced with DIOS. Low background MS spectra and good detection sensitivity at the 100-150 fmol level for pharmaceutical compounds were achieved with DIOS-MS.

  3. Nanoporous silicon oxide memory.

    PubMed

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.

  4. Large area Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Rea, S. N.; Gleim, P. S.

    1977-01-01

    The overall cost effectiveness of the Czochralski process for producing large-area silicon was determined. The feasibility of growing several 12 cm diameter crystals sequentially at 12 cm/h during a furnace run and the subsequent slicing of the ingot using a multiblade slurry saw were investigated. The goal of the wafering process was a slice thickness of 0.25 mm with minimal kerf. A slice + kerf of 0.56 mm was achieved on 12 cm crystal using both 400 grit B4C and SiC abrasive slurries. Crystal growth experiments were performed at 12 cm diameter in a commercially available puller with both 10 and 12 kg melts. Several modifications to the puller hoz zone were required to achieve stable crystal growth over the entire crystal length and to prevent crystallinity loss a few centimeters down the crystal. The maximum practical growth rate for 12 cm crystal in this puller design was 10 cm/h, with 12 to 14 cm/h being the absolute maximum range at which melt freeze occurred.

  5. Silicon Carbide Growth

    NASA Technical Reports Server (NTRS)

    2005-01-01

    Andrew Trunek has focused on supporting the Sic team through the growth of Sic crystals, making observations and conducting research that meets the collective needs and requirements of the team while fulfilling program commitments. Cancellation of the Ultra Efficient Engine Technology (UEET) program has had a significant negative impact on resources and research goals. This report highlights advancements and achievements made with this cooperative agreement over the past year. NASA Glenn Research Center (GRC) continues to make advances in silicon carbide (SiC) research during the past year. Step free surfaces were used as substrates for the deposition of GaN epilayers that yielded very low dislocation densities. Defect free 3C- SiC was successfully nucleated on step free mesas and test diodes were fabricated. Web growth techniques were used to increase the usable surface area of dislocation free SiC by approximately equal to 40%. The greatest advancement has been attained on stepped surfaces of SiC. A metrology standard was developed using high temperature etching techniques titled "Nanometer Step Height Standard". This development culminated in being recognized for a 2004 R&D100 award and the process to produce the steps received a NASA Space Act award.

  6. Silicon MINP solar cells

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.; Addis, F. W.; Miller, W. A.

    1985-01-01

    The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

  7. Silicon Photomultiplier charaterization

    NASA Astrophysics Data System (ADS)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  8. ePIXfab: the silicon photonics platform

    NASA Astrophysics Data System (ADS)

    Khanna, Amit; Drissi, Youssef; Dumon, Pieter; Baets, Roel; Absil, Philippe; Pozo, J.; Lo Cascio, D. M. R.; Fournier, M.; Fédéli, J.-M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-05-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training users in designing silicon photonics chips to fiber pigtailed chips. While ePIXfab provides world-wide users access to advanced silicon photonics it also focuses its attention to expanding the silicon photonics infrastructure through a network of design houses, access partners and industrial collaborations.

  9. Chlorine Free Technology for Solar-Grade Silicon Manufacturing: Preprint

    SciTech Connect

    Strebkov, D. S.; Pinov, A. P.; Zadde, V. V.; Lebedev, E. N.; Belov, E. P.; Efimov, N. K.; Kleshevnikova, S. I.; Touryan, K.; Bleak, D.

    2004-08-01

    Due to the development of the solar energy industry, a significant increase of polysilicon feedstock (PSF) production will be required in near future. The creation of special technology of solar grade polysilicon feedstock production is an important problem. Today, semiconductor-grade polysilicon is mainly manufactured using the trichlorosilane (SiHCl3) distillation and reduction. The feed-stock for trichlorosilane is metallurgical-grade silicon, the product of reduction of natural quartzite (silica). This polysilicon production method is characterized by high energy consumption and large amounts of wastes, containing environmentally harmful chlorine based compounds. In the former USSR the principles of industrial method for production of monosilane and polycrystalline silicon by thermal decomposition of monosilane were founded. This technology was proved in industrial scale at production of gaseous monosilane and PSF. We offered new chlorine free technology (CFT). Originality and novelty of the process were confirmed by Russian and US patents.

  10. Photoluminescence properties of silica aerogel/porous silicon nanocomposites

    NASA Astrophysics Data System (ADS)

    Karlash, A. Yu; Zakharko, Yu E.; Skryshevsky, V. A.; Tsiganova, A. I.; Kuznetsov, G. V.

    2010-08-01

    The luminescent properties of nanocomposite pellets based on silica aerogel and porous Si powder are studied depending on the ratio of chemical compounds. The photoluminescence of nanocomposites is characterized by a red-orange band related to silicon nanoparticles and a blue-green band related to silica aerogel with close values of decay time and activation energy. Remarkable tuning of nanocomposites' photoluminescence spectra in the RGB region is established allowing their use as promising phosphor materials for light-emitting diodes. The outgoing spectra of pellet photoluminescence are guided by the chemical composition ratio, porous Si and silica aerogel technology, and the storage time in ambient atmosphere. It was shown that using the silica aerogel as a dielectric matrix considerably increases the stability of photoluminescence yield of silicon nanoparticles.

  11. Solution immersed silicon (SIS)-based biosensors: a new approach in biosensing.

    PubMed

    Diware, M S; Cho, H M; Chegal, W; Cho, Y J; Jo, J H; O, S W; Paek, S H; Yoon, Y H; Kim, D

    2015-02-07

    A novel, solution immersed silicon (SIS)-based sensor has been developed which employs the non-reflecting condition (NRC) for a p-polarized wave. The SIS sensor's response is almost independent of change in the refractive index (RI) of a buffer solution (BS) which makes it capable of measuring low-concentration and/or low-molecular-weight compounds.

  12. Free ion yields for several silicon, germanium and tin containing liquids

    SciTech Connect

    Holroyd, R.A. ); Geer, S.; Ptohos, F. . High Energy Physics Lab.)

    1990-01-01

    A survey was made of compounds containing silicon, germanium or tin atoms to find new room temperature liquids for use in ionization chambers. The results show an interesting correlation of free ion yields with molecular structure. The data were also analyzed to obtain the average thermalization ranges of electrons formed in the ionization process.

  13. Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

    DOEpatents

    Carlson, David E.

    1980-01-01

    The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

  14. Compounds affecting cholesterol absorption

    NASA Technical Reports Server (NTRS)

    Hua, Duy H. (Inventor); Koo, Sung I. (Inventor); Noh, Sang K. (Inventor)

    2004-01-01

    A class of novel compounds is described for use in affecting lymphatic absorption of cholesterol. Compounds of particular interest are defined by Formula I: ##STR1## or a pharmaceutically acceptable salt thereof.

  15. Dinitroso and polynitroso compounds

    PubMed Central

    Gowenlock, Brian G.; Richter-Addo, George B.

    2005-01-01

    The growing interest in the chemistry of C-nitroso compounds (RN=O; R = alkyl or aryl group) is due in part to the recognition of their participation in various metabolic processes of nitrogen-containing compounds. C-Nitroso compounds have a rich organic chemistry in their own right, displaying interesting intra- and intermolecular dimerization processes and addition reactions with unsaturated compounds. In addition, they have a fascinating coordination chemistry. While most of the attention has been directed towards C-nitroso compounds containing a single –NO moiety, there is an emerging area of research dealing with dinitroso and polynitroso compounds. In this critical review, we present and discuss the synthetic routes and properties of these relatively unexplored dinitroso and polynitroso compounds, and suggest areas of further development involving these compounds. (126 references.) PMID:16100619

  16. Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle

    NASA Technical Reports Server (NTRS)

    deGroh, Henry C., III; Miller, Sharon K. R.; Smith, Ian M.; Daniels, Christopher C.; Steinetz, Bruce M

    2008-01-01

    Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.

  17. Investigation of silicon surface passivation by silicon nitride film deposition

    NASA Technical Reports Server (NTRS)

    Olsen, L. C.

    1984-01-01

    The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

  18. Colloidal characterization of silicon nitride and silicon carbide

    NASA Technical Reports Server (NTRS)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  19. Theoretical Study on the Second Hyperpolarizailities of Oligomeric Systems Composed of Carbon and Silicon π-Structures.

    PubMed

    Matsui, Hiroshi; Nagami, Takanori; Takamuku, Shota; Ito, Soichi; Kitagawa, Yasutaka; Nakano, Masayoshi

    2016-11-15

    To explore the prospect of molecules involving silicon-silicon multiple bonds as nonlinear optical molecular systems, the relationship between the structure and the second hyperpolarizabilities γ of the oligomeric systems composed of carbon and silicon π-structures is investigated using the density functional theory method. It is found that these compounds indicate intramolecular charge transfer (ICT) from the silicon units to the carbon units together with nonzero diradical characters. The γ values of these compounds are shown to be 2-13 times as large as those of the carbon analogs. Although asymmetric carbon and silicon π-systems exhibit comparable enhancement to the corresponding symmetric systems, donor-π-donor structures exhibit remarkable enhancement of γ despite of their both-end short silicon π-chain moieties (donor units). Further analysis using the odd electron and γ densities clarifies that the intermediate diradical character also contributes to the enhancement of γ. These results predict that even short π-conjugated silicone moieties can cause remarkable enhancement of γ by introducing them into π-conjugated hydrocarbon structures.

  20. Silicon-micromachined microchannel plates

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Boerstler, Robert; Steinbeck, John; Lemieux, Bryan; Winn, David R.

    2000-03-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of ˜0.5 to ˜25 μm, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200°C, also compatible with high-temperture brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposited or nucleated in the channels or the first strike surface. Results on resistivity, secondary emission and gain are presented.

  1. Silicon nitride equation of state

    NASA Astrophysics Data System (ADS)

    Brown, Robert C.; Swaminathan, Pazhayannur K.

    2017-01-01

    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  2. Silicon Nitride Equation of State

    NASA Astrophysics Data System (ADS)

    Swaminathan, Pazhayannur; Brown, Robert

    2015-06-01

    This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

  3. Silicon Heat Pipe Array

    NASA Technical Reports Server (NTRS)

    Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

    2013-01-01

    Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better

  4. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  5. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOEpatents

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  6. Silicon-Neuron Junction: Capacitive Stimulation of an Individual Neuron on a Silicon Chip

    NASA Astrophysics Data System (ADS)

    Fromherz, Peter; Stett, Alfred

    1995-08-01

    An identified nerve cell of the leech is attached to a planar silicon microstructure of p-doped silicon covered by a thin layer of insulating silicon oxide. A voltage step, applied between silicon and electrolyte, induces a capacitive transient in the cell which elicits an action potential. The capacitive extracellular stimulation is described by an equivalent electrical four-pole.

  7. A continuous silicon-coating facility

    NASA Technical Reports Server (NTRS)

    Butter, C.; Heaps, J. D.

    1979-01-01

    Automatic continuous silicon-coating facility is used to process 100 by 10 cm graphite-coated ceramic substrates for silicon solar cells. Process reduces contamination associated with conventional dip-coating processes, improving material service life.

  8. Solid structures with bioorganic films on silicon

    NASA Astrophysics Data System (ADS)

    Tutov, E. A.

    2012-06-01

    The electrophysical parameters of ovalbumin/silicon and propolis/silicon heterostructures are studied using impedance spectroscopy and high-frequency capacitance-voltage characteristics under water vapor sorption conditions.

  9. Porous silicon carbide (SIC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  10. A New Process for Fabricating Random Silicon Nanotips

    NASA Technical Reports Server (NTRS)

    Manohara, Harish

    2004-01-01

    An improved process for the fabrication of random arrays of silicon nanotips has been demonstrated to be feasible. Relative to other such processes, this process offers advantages of low cost and simplicity. Moreover, this process can readily be combined with other processes used to fabricate integrated circuits and other monolithic silicon structures. Arrays of silicon nanotips are subjects of research and development efforts directed toward utilizing them as field emitters in flat-panel displays, vacuum microelectronics, and microwave devices. Other silicon-nanotip-fabrication processes developed thus far predominantly include lithography, etching, and/or elaborate deposition steps followed by oxide sharpening steps and are both process intensive as well as expensive. In addition to being cheaper and simpler, the present process can efficiently produce silicon nanotips that range in height from a few microns to several tens of microns and are distributed over large areas. The process mentioned here can be summarized as consisting of (1) the growth of micro-etch masks on a silicon substrate, followed by (2) etching away of the masks, along with some of the substrate, to make an array of sharp tips. In the first step of the process, a cleaned silicon substrate is subjected to reactive ion etching (RIE) in a certain mixture of oxygen and carbon tetrafluoride under radio-frequency excitation. This process step results in the growth of fluorine based compounds in the form of stumps randomly distributed on the substrate. These stumps are known in the art as polymer RIE grass. The dimensions of these stumps are of the order of hundreds of nanometers, the exact values depending on process time and gas composition. The areal density of the stumps decreases with increasing process time as they grow and merge with neighboring stumps. These stumps constitute the micro-etch masks for the next step of the process. In the second step of the process, the substrate covered with

  11. In situ transmission infrared spectroscopy of high-kappa oxide atomic layer deposition onto silicon surfaces

    NASA Astrophysics Data System (ADS)

    Ho, Ming-Tsung

    Ultra-thin aluminum oxide (Al2O3) and hafnium oxide (HfO2) layers have been grown by atomic layer deposition (ALD) using tri-methyl-aluminum (TMA) and tetrakis-ethyl-methyl-amino-hafnium (TEMAH) respectively with heavy water (D2O) as the oxidizing agent. Several different silicon surfaces were used as substrates such as hydrogen terminated silicon (H/Si), SC2 (or RCA 2) cleaned native silicon oxide (SiO 2/Si), and silicon (oxy)nitride. In-situ transmission Fourier transform infrared spectroscopy (FTIR) has been adopted for the study of the growth mechanisms during ALD of these films. The vibrational spectra of gas phase TEMAH and its reaction byproducts with oxidants have also been investigated. Density functional theory (DFT) normal mode calculations show a good agreement with the experimental data when it is combined with linear wave-number scaling method and Fermi resonance mechanism. Ether (-C-O-C-) and tertiary alkylamine (N(R1R 2R3)) compounds are the two most dominant products of TEMAH reacting with oxygen gas and water. When ozone is used as the oxidant, gas phase CH2O, CH3NO2, CH3-N=C=O and other compounds containing -(C=O)- and --C-O-C- (or --O-C-) segments are observed. With substrate temperatures less than 400°C and 300°C for TMA and TEMAH respectively, Al oxide and Hf oxide ALD can be appropriately performed on silicon surfaces. Thin silicon (oxy)nitride thermally grown in ammonia on silicon substrate can significantly reduce silicon oxide interlayer formation during ALD and post-deposition annealing. The crystallization temperature of amorphous ALD grown HfO2 on nitridized silicon is 600°C, which is 100°C higher than on the other silicon surfaces. When HfO2 is grown on H/Si(111) at 100°C deposition temperature, minimum 5--10 ALD cycles are required for the full surface coverage. The steric effect can be seen by the evolution of the H-Si stretching mode at 2083 cm-1. The observed red shift of H-Si stretching to ˜ 2060 cm-1 can be caused by Si

  12. Silicone rubber selection for passive sampling of pesticides in water.

    PubMed

    Martin, A; Margoum, C; Randon, J; Coquery, M

    2016-11-01

    Silicone rubber can extract organic compounds with a broad range of polarities (logKow>2-3) from aqueous samples. Such compounds include substances of major concern in the protection of aquatic ecosystems and human health, e.g. pesticides. Silicone rubbers (SRs) with various characteristics have been successfully used in sorptive methods for water sample extraction in the laboratory (SPME, SBSE), and for passive sampling in aquatic environments. However, only few studies have evaluated variability in organic compound sorption due to the origin of SRs, particularly for pesticides. The aim of this study was to select an SR for the extraction of pesticides from water samples by passive sampling. To this end we measured the impact of seven SR formulations on sorption capacity, defined by the partition coefficient (Ksw). Kinetic experiments and sorption isotherms were performed to determine extraction recovery as a selection criterion for SRs, and pesticide partition coefficients. Very large differences in affinity for pesticides were found between two kinds of SRs: "Polymerized SR kits" and "Manufactured SRs". One SR was chosen among the "Manufactured SRs", and the Ksw values of 21 pesticides were determined, filling a gap in the literature (1.50

  13. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    SciTech Connect

    Timokhov, D. F. Timokhov, F. P.

    2009-01-15

    Possible ways for increasing the photoluminescence quantum yield of porous silicon layers have been investigated. The effect of the anodization parameters on the photoluminescence properties for porous silicon layers formed on silicon substrates with different crystallographic orientations was studied. The average diameters for silicon nanoclusters are calculated from the photoluminescence spectra of porous silicon. The influence of the substrate crystallographic orientation on the photoluminescence quantum yield of porous silicon is revealed. A model explaining the effect of the substrate orientation on the photoluminescence properties for the porous silicon layers formed by anode electrochemical etching is proposed.

  14. Belle II Silicon Vertex Detector

    NASA Astrophysics Data System (ADS)

    Dutta, D.; Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Bulla, L.; Caria, G.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; De Pietro, G.; Divekar, S. T.; Doležal, Z.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C.; Kandra, J.; Kambara, N.; Kang, K. H.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kumar, R.; Kun, W.; Kvasnička, P.; La Licata, C.; Lanceri, L.; Lettenbicher, J.; Libby, J.; Lueck, T.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Resmi, P. K.; Rozanska, M.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Watanuki, S.; Watanabe, M.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.; Zani, L.

    2017-02-01

    The Belle II experiment at the SuperKEKB asymmetric energy e+e‑ collider in KEK, Japan will operate at an instantaneous luminosity 40 times larger than that of its predecessor, Belle. It is built with an aim of collecting a huge amount of data (50 ab‑1 by 2025) for precise CP violation measurements and new physics search. Thus, we need an accurate vertex determination and reconstruction of low momentum tracks which will be achieved with the help of vertex detector (VXD). The Belle II VXD consists of two layers of DEPFET pixels (`Pixel Detector') and four layers of double-sided silicon microstrip sensors (`Silicon Vertex Detector'), assembled over carbon fibre ribs. In this paper, we discuss about the Belle II Silicon Vertex Detector, especially its design and key features; we also present its module (`ladder') assembly and testing procedures.

  15. Realistic models of paracrystalline silicon

    NASA Astrophysics Data System (ADS)

    Nakhmanson, S. M.; Voyles, P. M.; Mousseau, Normand; Barkema, G. T.; Drabold, D. A.

    2001-06-01

    We present a procedure for the preparation of physically realistic models of paracrystalline silicon based on a modification of the bond-switching method of Wooten, Winer, and Weaire. The models contain randomly oriented c-Si grains embedded in a disordered matrix. Our technique creates interfaces between the crystalline and disordered phases of Si with an extremely low concentration of coordination defects. The resulting models possess structural and vibrational properties comparable with those of good continuous random network models of amorphous silicon and display realistic optical properties, correctly reproducing the electronic band gap of amorphous silicon. The largest of our models also shows the best agreement of any atomistic model structure that we tested with fluctuation microscopy experiments, indicating that this model has a degree of medium-range order closest to that of the real material.

  16. Waveguide silicon nitride grating coupler

    NASA Astrophysics Data System (ADS)

    Litvik, Jan; Dolnak, Ivan; Dado, Milan

    2016-12-01

    Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

  17. Bactericidal activity of black silicon.

    PubMed

    Ivanova, Elena P; Hasan, Jafar; Webb, Hayden K; Gervinskas, Gediminas; Juodkazis, Saulius; Truong, Vi Khanh; Wu, Alex H F; Lamb, Robert N; Baulin, Vladimir A; Watson, Gregory S; Watson, Jolanta A; Mainwaring, David E; Crawford, Russell J

    2013-01-01

    Black silicon is a synthetic nanomaterial that contains high aspect ratio nanoprotrusions on its surface, produced through a simple reactive-ion etching technique for use in photovoltaic applications. Surfaces with high aspect-ratio nanofeatures are also common in the natural world, for example, the wings of the dragonfly Diplacodes bipunctata. Here we show that the nanoprotrusions on the surfaces of both black silicon and D. bipunctata wings form hierarchical structures through the formation of clusters of adjacent nanoprotrusions. These structures generate a mechanical bactericidal effect, independent of chemical composition. Both surfaces are highly bactericidal against all tested Gram-negative and Gram-positive bacteria, and endospores, and exhibit estimated average killing rates of up to ~450,000 cells min(-1) cm(-2). This represents the first reported physical bactericidal activity of black silicon or indeed for any hydrophilic surface. This biomimetic analogue represents an excellent prospect for the development of a new generation of mechano-responsive, antibacterial nanomaterials.

  18. Belle II silicon vertex detector

    NASA Astrophysics Data System (ADS)

    Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2016-09-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  19. Ice nucleation on hydrophilic silicon

    NASA Astrophysics Data System (ADS)

    Ochshorn, Eli; Cantrell, Will

    2008-04-01

    We have used Fourier transform infrared spectroscopy to study thin water films on a hydrophilic silicon surface in the temperature range from 20to-20°C. Throughout that range, the spectra of the water adjacent to the silicon surface are consistent with that of bulk water near 25°C. Thicker films (>1μm) freeze at -11±1°C. We reconcile the apparent paradox of a thin film of water which is quite liquidlike at a temperature where freezing of thicker films occurs by hypothesizing that the nucleation event in the thicker film is triggered by a critical ice embryo which forms at some small distance from the silicon surface, as opposed to in direct contact with it.

  20. Microdistribution of oxygen in silicon

    NASA Technical Reports Server (NTRS)

    Murgai, A.; Chi, J. Y.; Gatos, H. C.

    1980-01-01

    The microdistribution of oxygen in Czochralskii-grown, p-type silicon crystals was determined by using the SEM in the EBIC mode in conjunction with spreading resistance measurements. When the conductivity remained p-type, bands of contrast were observed in the EBIC image which corresponded to maxima in resistivity. When at the oxygen concentration maxima the oxygen donor concentration exceeded the p-type dopant concentration, an inversion of the conductivity occurred. It resulted in the formation of p-n junctions in a striated configuration and the local inversion of the EBIC image contrast. By heat-treating silicon at 1000 C prior to the activation of oxygen donors, some silicon-oxygen micro-precipitates were observed in the EBIC image within the striated oxygen concentration maxima.

  1. A Ferroelectric Oxide Made Directly on Silicon

    DTIC Science & Technology

    2009-04-17

    Issues of Complex, Epitaxial Oxide Growth and Integration with Silicon by Molecular Beam Epitaxy (Pennsylvania State University, University Park, 2002...Ferroelectric Oxide Made Directly on Silicon Maitri P. Warusawithana,1 Cheng Cen,2 Charles R. Sleasman,2 Joseph C. Woicik,3 Yulan Li,4 Lena Fitting...Schlom1* Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering

  2. System and method for liquid silicon containment

    SciTech Connect

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  3. 500 C SILICON CARBIDE RECTIFIER PROGRAM.

    DTIC Science & Technology

    Efforts were continued on the development of 500 degree C silicon carbide rectifiers. The growth rate of silicon carbide crystals prepared by the...as obtained from a simple model. All values agree within a factor of five. The use of molten borax as an etchant for silicon carbide was studies...is possible. Details are given on the life and storage tests which were successfully passed by two silicon carbide rectifiers. An open tube-flowing

  4. Silicon nanocrystal inks, films, and methods

    DOEpatents

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  5. Automatic Replenishment Of Dopant In Silicon Growth

    NASA Technical Reports Server (NTRS)

    Kochka, E. L.

    1988-01-01

    Dopant incorporated feed pellets to maintain required concentration. Technique of continuous replenishment of dopant in silicon melt helps ensure correct resistivity in solid silicon grown from melt. Technique used in dendritic-web growth process in which ribbon of silicon continously pulled from molten material. Providing uniform doping and resistivity in ribbon technique enables production of high-quality silicon ribbon at high yields for use in semiconductor devices.

  6. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    PubMed

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  7. Laser wafering for silicon solar.

    SciTech Connect

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  8. Analysis of silicon transporters in turfgrass species

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Silicon is an abundant element on earth and is also known to be beneficial as an amendment in some crops such as rice. Despite its abundance in many soils, accumulation of silicon in plants is species-specific and can be widely different. It has been shown that the genes responsible for silicon upta...

  9. 21 CFR 573.940 - Silicon dioxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed...

  10. 21 CFR 172.480 - Silicon dioxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food...

  11. Aquaporins Mediate Silicon Transport in Humans.

    PubMed

    Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul

    2015-01-01

    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  12. 21 CFR 172.480 - Silicon dioxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food...

  13. 21 CFR 573.940 - Silicon dioxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed...

  14. 21 CFR 172.480 - Silicon dioxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food...

  15. 21 CFR 573.940 - Silicon dioxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed...

  16. 21 CFR 172.480 - Silicon dioxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Silicon dioxide. 172.480 Section 172.480 Food and... PERMITTED FOR DIRECT ADDITION TO FOOD FOR HUMAN CONSUMPTION Anticaking Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food in accordance with the following...

  17. 21 CFR 573.940 - Silicon dioxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed...

  18. 21 CFR 172.480 - Silicon dioxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food...

  19. Silicon Carbide Semiconductor Device Fabrication and Characterization

    DTIC Science & Technology

    1990-02-08

    SPACE ADMINISTRATION For Grant NAG 3-782 S- 1 entitled SILICON CARBIDE SEMICONDUCTOR DEVICE FABRICATION AND CHARACTERIZATION For the Period 10 February...NUMBERS Silicon Carbide ..Semiconductor Device Fabrication and PR# 335820 Characterization __________________________________________________ APP# 505-62-01...also been demonstrated. _________ 14. SUBJECT TERMS 15. NuMBER OF PACiES -~- Silicon carbide , Ysemiconductor devices, ion implantation aseeI4i

  20. Method of Fabricating Silicon Carbide Articles.

    DTIC Science & Technology

    The patent relates to a method for fabricating silicon carbide articles which comprises hot pressing a homogeneous mixture of carbonaceous particles...and silicon carbide powder. The presence of the carbon limits grain growth so that a silicon carbide product having greatly improved physical

  1. Prealloyed catalyst for growing silicon carbide whiskers

    DOEpatents

    Shalek, Peter D.; Katz, Joel D.; Hurley, George F.

    1988-01-01

    A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

  2. Process Research on Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  3. Aquaporins Mediate Silicon Transport in Humans

    PubMed Central

    Garneau, Alexandre P.; Carpentier, Gabriel A.; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F.; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J.; Bélanger, Richard; Côté, François; Isenring, Paul

    2015-01-01

    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates. PMID:26313002

  4. Process of preparing tritiated porous silicon

    DOEpatents

    Tam, S.W.

    1997-02-18

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  5. High-Production Silicon-Ingot Slicer

    NASA Technical Reports Server (NTRS)

    Kuo, Y. S.

    1983-01-01

    New concept for slicing silicon ingots into wafers promises to increase production rates and improve yields of good wafers, thereby reducing cost of manufacturing silicon solar cells. In proposed wafer slicer, stack of ganged blades cuts group of silicon ingots simultaneously. Blades cut horizontally while ingots rotate about their vertical axes.

  6. 77 FR 20649 - Silicon Metal From China

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-05

    ... COMMISSION Silicon Metal From China Determination On the basis of the record \\1\\ developed in the subject... order on silicon metal from China would be likely to lead to continuation or recurrence of material... Publication 4312 (March 2012), entitled Silicon Metal from China: Investigation No. 731-TA-472 (Third...

  7. Luminescence decay of porous silicon

    NASA Astrophysics Data System (ADS)

    Chen, X.; Uttamchandani, D.; Sander, D.; O'Donnell, K. P.

    1993-04-01

    The luminescence decay pattern of porous silicon samples prepared by electrochemical etching is characterised experimentally by a non-exponential profile, a strong dependence on temperature and an absence of spectral diffusion. We describe this luminescence as carrier-dopping-assisted recombination. Following the correlation function approach to non-dispersive transport developed by Scher and co-workers [Physics Today 41 (1991) 26], we suggest a simple derivation of analytical functions which accurately describes the anomalous luminescence decay of porous silicon, and show that this model includes exponential and Kohlrausch [Pogg. Ann. Phys. 119 (1863) 352] (stretched-exponential) relaxations as special cases.

  8. Biocatalytic synthesis of silicone polyesters.

    PubMed

    Frampton, Mark B; Subczynska, Izabela; Zelisko, Paul M

    2010-07-12

    The immobilized lipase B from Candida antarctica (CALB) was used to synthesize silicone polyesters. CALB routinely generated between 74-95% polytransesterification depending on the monomers that were used. Low molecular weight diols resulted in the highest rates of esterification. Rate constants were determined for the CALB catalyzed polytransesterifications at various reaction temperatures. The temperature dependence of the CALB-mediated polytransesterifications was examined. A lipase from C. rugosa was only successful in performing esterifications using carboxy-modified silicones that possessed alkyl chains greater than three methylene units between the carbonyl and the dimethylsiloxy groups. The proteases alpha-chymotrypsin and papain were not suitable enzymes for catalyzing any polytransesterification reactions.

  9. Erbium diffusion in silicon dioxide

    SciTech Connect

    Lu Yingwei; Julsgaard, B.; Petersen, M. Christian; Jensen, R. V. Skougaard; Pedersen, T. Garm; Pedersen, K.; Larsen, A. Nylandsted

    2010-10-04

    Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick's second law of diffusion. Erbium diffusion in magnetron sputtered silicon dioxide from buried erbium distributions has in particular been studied, and in this case a simple Arrhenius law can describe the diffusivity with an activation energy of 5.3{+-}0.1 eV. Within a factor of two, the erbium diffusion coefficients at a given temperature are identical for all investigated matrices.

  10. Microdefects in cast multicrystalline silicon

    SciTech Connect

    Wolf, E.; Klinger, D.; Bergmann, S.

    1995-08-01

    The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.

  11. Stable silaimines with three- and four-coordinate silicon atoms.

    PubMed

    Samuel, Prinson P; Azhakar, Ramachandran; Ghadwal, Rajendra S; Sen, Sakya S; Roesky, Herbert W; Granitzka, Markus; Matussek, Julia; Herbst-Irmer, Regine; Stalke, Dietmar

    2012-10-15

    The reactions of silylenes with organic azides are quite diverse, depending on the substituents of the silylene center and on the nature of the azide employed. Elusive silaimine with three-coordinate silicon atom L(1)SiN(2,6-Triip(2)-C(6)H(3)) (5) {L(1) = CH[(C═CH(2))(CMe)(2,6-iPr(2)C(6)H(3)N)(2)] and Triip = 2,4,6-triisopropylphenyl} was synthesized by treatment of the silylene L(1)Si (1) with a sterically demanding 2,6-bis(2,4,6-triisopropylphenyl)phenyl azide (2,6-Triip(2)C(6)H(3)N(3)). The reaction of Lewis base-stabilized dichlorosilylene L(2)SiCl(2) (2) {L(2) = 1,3-bis(2,6-iPr(2)C(6)H(3))imidazol-2-ylidene} with Ph(3)SiN(3) afforded four-coordinate silaimine L(2)(Cl(2))SiNSiPh(3) (6). Treatment of 2,6-Triip(2)C(6)H(3)N(3) with L(3)SiCl (3) (L(3) = PhC(NtBu)(2)) yielded silaimine L(3)(Cl)SiN(2,6-Triip(2)-C(6)H(3)) (7) possessing a four-coordinate silicon atom. The reactions of L(3)SiN(SiMe(3))(2) (4) with adamantyl and trimethylsilyl azide furnished silaimine compounds with a four-coordinate silicon atom L(3)(N(Ad)SiMe(3))SiN(SiMe(3)) (8) (Ad = adamantyl) and L(3)(N(SiMe(3))(2))SiN(SiMe(3)) (9). Compound 8 was formed by migration of one of the SiMe(3) groups. Compounds 5-9 are stable under inert atmosphere and were characterized by elemental analysis, NMR spectroscopy, and single-crystal X-ray studies.

  12. Valleys in a silicon/silicon-germanium quantum point contact

    NASA Astrophysics Data System (ADS)

    McGuire, Lisa M.

    This thesis develops a method for performing spectroscopy on a quantum point contact and extracting the energies that contribute to the spectrum, most notably in this case, the valley splitting. Valleys in silicon are of interest from a materials point of view when implementing quantum computing in silicon, because quantum computing relies on the existence of two well defined states, and the presence of valleys possibly interferes with that requirement. While silicon is of great interest for this application due to its low spin-orbit coupling and the abundance of an isotope with zero nuclear spin, two of the main sources for decoherence, silicon also has a near degeneracy in the conduction band minimum (valley), possibly leading to another source of decoherence. Recent measurements have shown the valley splitting to be acceptably large in the presence of confinement. This thesis builds on those results by investigating the fundamental mechanisms of valley splitting by taking into account the coupling of the valleys in different transverse confinement modes of a quantum point contact and the dependence of valley splitting on the relevant properties of the substrate and material, namely the miscut angle and device orientation. Also included are estimates of the uncertainty and explanation of how we defined the uncertainty and the methods we used to calculate it. A comparison between previously published results and those presented in this thesis shows that they are consistent with each other and the valley splitting is indeed larger than the spin splitting.

  13. Nanoporous silicon nitride membranes fabricated from porous nanocrystalline silicon templates

    NASA Astrophysics Data System (ADS)

    Desormeaux, J. P. S.; Winans, J. D.; Wayson, S. E.; Gaborski, T. R.; Khire, T. S.; Striemer, C. C.; McGrath, J. L.

    2014-08-01

    The extraordinary permeability and manufacturability of ultrathin silicon-based membranes are enabling devices with improved performance and smaller sizes in such important areas as molecular filtration and sensing, cell culture, electroosmotic pumping, and hemodialysis. Because of the robust chemical and mechanical properties of silicon nitride (SiN), several laboratories have developed techniques for patterning nanopores in SiN using reactive ion etching (RIE) through a template structure. These methods however, have failed to produce pores small enough for ultrafiltration (<100 nm) in SiN and involve templates that are prone to microporous defects. Here we present a facile, wafer-scale method to produce nanoporous silicon nitride (NPN) membranes using porous nanocrystalline silicon (pnc-Si) as a self-assembling, defect free, RIE masking layer. By modifying the mask layer morphology and the RIE etch conditions, the pore sizes of NPN can be adjusted between 40 nm and 80 nm with porosities reaching 40%. The resulting NPN membranes exhibit higher burst pressures than pnc-Si membranes while having 5× greater permeability. NPN membranes also demonstrate the capacity for high resolution separations (<10 nm) seen previously with pnc-Si membranes. We further demonstrate that human endothelial cells can be grown on NPN membranes, verifying the biocompatibility of NPN and demonstrating the potential of this material for cell culture applications.

  14. Silicon microcantilevers as sensors

    NASA Astrophysics Data System (ADS)

    Dhayal, Babita

    This work focuses on the general use of microcantilever arrays for parallel detection of multiple analytes and understanding the mechanics behind it. The system employs an array of eight silicon micro cantilevers and has the capability of measuring cantilever deflection due to differential surface stress generated as well as frequency change due to added mass in both gaseous and liquid environments. In this work, we move beyond antibody-antigen binding systems and demonstrate that short peptides ligands can be used to efficiently capture Bacillus subtilis and Bacillus anthracis spores in liquids, given that specific peptides corresponding to the particular bacteria are synthesized. These peptide functionalized cantilever array can be stored under ambient conditions for days without loss of functionality, making then suitable for in-field use. A detailed experimental protocol, optimizing every step is presented. Applications of this technology can serve as a platform for the detection of pathogenic organisms including biowarfare agents. The dominant physical phenomena producing surface-stress during molecular binding are difficult to specify a priori. Differential surface stress generated due to adsorption of small molecules on gold coated cantilevers is measured to gain insight into the mechanisms involved in the self-assembly process and into the origin of associated the surface stress. Our experiments indicate that the contribution from inter-molecular Lennard-Jones interactions and binding energy between the end group and the functionalized surface play a minimal role in the development of surface stress. Electrostatic repulsion between adsorbed species stress and Changes in the electronic structure of the underlying gold substrate play an important role in surface stress generation. To achieve higher sensitivity in the performance of cantilever sensors, optimized cantilevers of different dimensions are required. By adjusting cantilever dimensions, it is

  15. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    SciTech Connect

    Lorenz, Adam

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  16. The evaporation study of silicon-containing ionic liquid

    NASA Astrophysics Data System (ADS)

    Chilingarov, Norbert S.; Medvedev, Artem A.; Deyko, Grigoriy S.; Kustov, Leonid M.; Chernikova, Elena A.; Glukhov, Lev M.; Polyakova, Marina V.; Ioutsi, Vitaliy A.; Markov, Vitaliy Yu.; Sidorov, Lev N.

    2016-07-01

    1,2-Dimethyl-3-(1‧,1‧,3‧,3‧-tetramethyl-3‧-phenyldisiloxanyl)methylimidazolium bis(trifluoromethanesulfonyl)amide ([PhC5OSi2MMIm+][Tf2N-]) is the first silicon-containing ionic liquid which was characterized with the vaporization enthalpy, (138.5 ± 1.8) kJ mol-1, and saturated vapor pressure, ln(p/Pa) = -(16656 ± 219)/(T/K) + (30.69 ± 0.92). This compound is a unique ionic liquid giving ions, retaining both cationic and anionic portions, in the electron impact ionization (EI) mass spectrum.

  17. Acute toxicities to larval rainbow trout of representative compounds detected in Great Lakes fish

    USGS Publications Warehouse

    Edsall, Carol Cotant

    1991-01-01

    In recent years the National Fisheries Research Center-Great Lakes has ranked the potential hazard to fish and invertebrates of various chemical compounds detected in two Great Lakes fishes-- lake trout, Salvelinus namaycush, and walleye, Stizostedion vitreum vitreum (Hesselberg and Seelye 1982). This hazard assessment has included the identification of the potential sources of the compounds, determination of the occurrence and abundance of the compounds in Great Lakes fish, and the determination of acute toxicities of representative compounds of 19 chemical classes (Passino and Smith 1987a). In further studies Smith et al. (1988) focused on 6 of the 19 classes of compounds using the zooplankter Daphnia pulex as the test organism. They ranked the six classes as follows (in decreasing order of toxicity): polycyclic aromatic hydrocarbons (PAHs), alkyl halides, nitrogen-containing compounds, cyclic alkanes, heterocyclic nitrogen compounds, and silicon-containing compounds.

  18. Effects of silicon deficiency on lipid composition and metabolism in the diatom Cyclotella cryptica

    SciTech Connect

    Roessler, P.G. )

    1988-09-01

    The effects of silicon deficiency on the metabolism and composition of lipids in Cyclotella cryptica T13L Reimann, Lewin, and Guillard were examined Silicon-deficient cells had higher levels of neutral lipids (primarily triacylglycerols) and higher proportions of saturated and monounsaturated fatty acids than silicon-replete cells. After 4 h of silicon deficiency, the percentage of newly assimilated NaH{sup 14}CO{sub 3} partitioned into lipids increased from 27.6% to 54.1%, whereas the percentage partitioned into chrysolaminarin decreased from 21.6% to 54.1%, whereas the percentage partitioned into chrysolaminarin decreased from 21.6% to 10.6%. In addition, pulse-chase experiments with NaH{sup 14}CO{sub 3} indicated that the amount of {sup 14}C in the total cellular lipid fraction increased by 32% after 12 h of silicon deficiency despite the absence of additional photoassimilable {sup 14}C. Therefore, the accumulation of lipids in response to silicon deficiency appears to be due to two distinct processes: (1) an increase in the proportion of newly assimilated carbon partitioned into lipids, and (2) a slow conversion of previously assimilated carbon from non-lipid compounds into lipids.

  19. Anisotropic Tribological Properties of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Buckley, D. H.

    1980-01-01

    The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

  20. Method for processing silicon solar cells

    DOEpatents

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  1. Silicon on insulator self-aligned transistors

    DOEpatents

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  2. Method for processing silicon solar cells

    DOEpatents

    Tsuo, Y. Simon; Landry, Marc D.; Pitts, John R.

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  3. Intraventricular Silicone Oil: A Case Report.

    PubMed

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe

    2016-01-01

    Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor.

  4. Silicon carbide fibers and articles including same

    DOEpatents

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  5. Methods for producing silicon carbide fibers

    DOEpatents

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  6. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    SciTech Connect

    Black, Marcie

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  7. Process Research On Polycrystalline Silicon Material (PROPSM)

    NASA Technical Reports Server (NTRS)

    Culik, J. S.; Wohlgemuth, J. H.

    1982-01-01

    Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

  8. Nasal dorsal augmentation with silicone implants.

    PubMed

    Erlich, Mark A; Parhiscar, Afshin

    2003-11-01

    Silicone rubber has been used safely and effectively for facial augmentation for nearly 5 decades in eastern Asia. We have used silicone rubber nasal implants in primary ethnic rhinoplasty and have found consistent and long-lasting results with low complication rates. Silicone dorsal nasal augmentation in primary rhinoplasty avoids donor site morbidity and implant resorption as seen with autogenous implants. Silicone nasal implants have a low extrusion and infection rate. In the appropriate patient with proper placement, silicone nasal implant is nearly the ideal implant material.

  9. Solar silicon via the Dow Corning process

    NASA Technical Reports Server (NTRS)

    Hunt, L. P.; Dosaj, V. D.

    1979-01-01

    Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

  10. Silicon Technologies Adjust to RF Applications

    NASA Technical Reports Server (NTRS)

    Reinecke Taub, Susan; Alterovitz, Samuel A.

    1994-01-01

    Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications.

  11. Transmutation doping of silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  12. Enhanced fluorescence, morphological and thermal properties of CdSe/ZnS quantum dots incorporated in silicone resin.

    PubMed

    Trung, Nguyen Ngoc; Luu, Quynh-Phuong; Son, Bui Thanh; Sinh, Le Hoang; Bae, Jin-Young

    2013-01-01

    Our research focused on the morphological and optical properties of core/shell cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dots incorporated in silicone resin. After dispersing ligand-coated quantum dots into Dow Corning two-component silicone resins (OE6630A and OE6630B at 1:4 mixing ratio by weight), the resins were cured at 150 degrees C for 1.5 hours to produce the quantum dot-silicone resin nanocomposites. The optical, morphological and thermal properties of the quantum dot incorporated in silicone resin were investigated by ultraviolet-visible, fluorescence, atomic force microscopy, field emission scanning electron microscopy, differential scanning calorimetry and thermogravimetric analysis. When the quantum dots, originally coated with trioctylamine ligand, were transferred from a chloroform solvent to methyl phenyl silicone oil and silicone resins of high viscosity, the quantum dots showed increased turbidity and lowered fluorescence intensity. Fluorescence enhancement was investigated by using various functional ligands such as poly(1, 1-dimethyl silazane) (multi-silazane), hexamethylenediamine (diamine), cysteamine (amino-thiol), triethylsilane (reactive hydrosilane), hexamethyldisilazane, nonamethyltrisilazane, octamethylcyclotetrasilazane (reactive amines). The results showed that the reactive amines were good additive ligands for enhancing the fluorescence of CdSe/ZnS quantum dots dispersed in the silicone resins, providing 1.2-2.48 Im/W and 4.2-5.56% higher luminous efficiency and photoluminescence conversion efficiency, respectively. We speculate that these reactive amines donate electrons to the surface electron traps, thereby reducing charge recombination. In addition, quantum dots aggregate to form quantum dot clusters with a relatively homogeneously dispersed in the silicone resin matrices, showing good emission properties due to surface passivation and good colloidal stability with the addition of silazane compounds to the resin

  13. Method for fabricating silicon cells

    DOEpatents

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  14. Method for fabricating silicon cells

    DOEpatents

    Ruby, Douglas S.; Basore, Paul A.; Schubert, W. Kent

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  15. Microelectromechanical pump utilizing porous silicon

    DOEpatents

    Lantz, Jeffrey W.; Stalford, Harold L.

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  16. Oxidation resistance of silicon ceramics

    NASA Technical Reports Server (NTRS)

    Yasutoshi, H.; Hirota, K.

    1984-01-01

    Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.

  17. Let’s talk silicon

    Technology Transfer Automated Retrieval System (TEKTRAN)

    While silicon (Si) has been a known plant nutrient for centuries, how plants use this element is still poorly understood. Researchers have identified how plants acquire Si from the environment and transport the element to all plant tissues, including roots, stems, petioles, leaves and flowers. We ...

  18. Mesoporous Silicon-Based Anodes

    NASA Technical Reports Server (NTRS)

    Peramunage, Dharmasena

    2015-01-01

    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  19. Impurities in silicon solar cells

    NASA Technical Reports Server (NTRS)

    Hopkins, R. H.

    1985-01-01

    Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

  20. Silicone Coating on Polyimide Sheet

    NASA Technical Reports Server (NTRS)

    Park, J. J.

    1985-01-01

    Silicone coatings applied to polyimide sheeting for variety of space-related applications. Coatings intended to protect flexible substrates of solar-cell blankets from degradation by oxygen atoms, electrons, plasmas, and ultraviolet light in low Earth orbit and outer space. Since coatings are flexible, generally useful in forming flexible laminates or protective layers on polyimide-sheet products.

  1. Behavior of dislocations in silicon

    SciTech Connect

    Sumino, Koji

    1995-08-01

    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  2. Molecular dynamics of silicon indentation

    NASA Astrophysics Data System (ADS)

    Kallman, J. S.; Hoover, W. G.; Hoover, C. G.; de Groot, A. J.; Lee, S. M.; Wooten, F.

    1993-04-01

    We use nonequilibrium molecular dynamics to simulate the elastic-plastic deformation of silicon under tetrahedral nanometer-sized indentors. The results are described in terms of a rate-dependent and temperature-dependent phenomenological yield strength. We follow the structural change during indentation with a computer technique that allows us to model the dynamic simulation of diffraction patterns.

  3. Dispersion toughened silicon carbon ceramics

    DOEpatents

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  4. The silicone breast implant controversy.

    PubMed

    Guerette, P H

    1995-02-01

    Feminists call it objectification. Consumer advocates call it victimization. Medical personnel call it augmentation. Women, implantation. Whatever the term, media hype and the increasing number of lawsuits against U.S. manufacturers of silicone breast implants has caused widespread concern among women and raised serious questions about the long term health risks and safety of breast implant devices.

  5. Surface property modification of silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.

    1984-01-01

    The main emphasis of this work has been to determine the wear rate of silicon in fluid environments and the parameters that influence wear. Three tests were carried out on single crystal Czochralski silicon wafers: circular and linear multiple-scratch tests in fluids by a pyramidal diamond simulated fixed-particle abrasion; microhardness and three-point bend tests were used to determine the hardness and fracture toughness of abraded silicon and the extent of damage induced by abrasion. The wear rate of (100) and (111) n and p-type single crystal Cz silicon abraded by a pyramidal diamond in ethanol, methanol, acetone and de-ionized water was determined by measuring the cross-sectional areas of grooves of the circular and linear multiple-scratch tests. The wear rate depends on the loads on the diamond and is highest for ethanol and lowest for de-ionized water. The surface morphology of the grooves showed lateral and median cracks as well as a plastically deformed region. The hardness and fracture toughness are critical parameters that influence the wear rate. Microhardness tests were conducted to determine the hardness as influenced by fluids. Median cracks and the damage zone surrounding the indentations were also related to the fluid properties.

  6. Bipulsating Technique for Silicon Production

    NASA Technical Reports Server (NTRS)

    Sanjurjo, A.

    1982-01-01

    Method controls reaction temperature and rate of reaction of sodium and silicon tetrafluoride by alternately adding measured amounts of reactants. Technique used in large reactor, where heat dissipation becomes serious problem, to control reactor temperatures. Highly efficient method, which would utilize almost 100 percent of raw materials.

  7. XAFS Model Compound Library

    DOE Data Explorer

    Newville, Matthew

    The XAFS Model Compound Library contains XAFS data on model compounds. The term "model" compounds refers to compounds of homogeneous and well-known crystallographic or molecular structure. Each data file in this library has an associated atoms.inp file that can be converted to a feff.inp file using the program ATOMS. (See the related Searchable Atoms.inp Archive at http://cars9.uchicago.edu/~newville/adb/) This Library exists because XAFS data on model compounds is useful for several reasons, including comparing to unknown data for "fingerprinting" and testing calculations and analysis methods. The collection here is currently limited, but is growing. The focus to date has been on inorganic compounds and minerals of interest to the geochemical community. [Copied, with editing, from http://cars9.uchicago.edu/~newville/ModelLib/

  8. Preparation of uranium compounds

    DOEpatents

    Kiplinger, Jaqueline L; Montreal, Marisa J; Thomson, Robert K; Cantat, Thibault; Travia, Nicholas E

    2013-02-19

    UI.sub.3(1,4-dioxane).sub.1.5 and UI.sub.4(1,4-dioxane).sub.2, were synthesized in high yield by reacting turnings of elemental uranium with iodine dissolved in 1,4-dioxane under mild conditions. These molecular compounds of uranium are thermally stable and excellent precursor materials for synthesizing other molecular compounds of uranium including alkoxide, amide, organometallic, and halide compounds.

  9. Formation of silicones mediated by the sponge enzyme silicatein-α.

    PubMed

    Wolf, Stephan E; Schlossmacher, Ute; Pietuch, Anna; Mathiasch, Bernd; Schröder, Heinz-C; Müller, Werner E G; Tremel, Wolfgang

    2010-10-21

    The sponge-restricted enzyme silicatein-α catalyzes in vivo silica formation from monomeric silicon compounds from sea water (i.e. silicic acid) and plays the pivotal role during synthesis of the siliceous sponge spicules. Recombinant silicatein-α, which was cloned from the demosponge Suberites domuncula (phylum Porifera), is shown to catalyze in vitro condensation of alkoxy silanes during a phase transfer reaction at neutral pH and ambient temperature to yield silicones like the straight-chained polydimethylsiloxane (PDMS). The reported condensation reaction is considered to be the first description of an enzymatically enhanced organometallic condensation reaction.

  10. Photocatalytic Properties of Porous Silicon Nanowires.

    PubMed

    Qu, Yongquan; Zhong, Xing; Li, Yujing; Liao, Lei; Huang, Yu; Duan, Xiangfeng

    2010-01-01

    Porous silicon nanowires are synthesized through metal assisted wet-chemical etch of highly-doped silicon wafer. The resulted porous silicon nanowires exhibit a large surface area of 337 m(2)·g(-1) and a wide spectrum absorption across the entire ultraviolet, visible and near infrared regime. We further demonstrate that platinum nanoparticles can be loaded onto the surface of the porous silicon nanowires with controlled density. These combined advancements make the porous silicon nanowires an interesting material for photocatalytic applications. We show that the porous silicon nanowires and platinum nanoparticle loaded porous silicon nanowires can be used as effective photocatalysts for photocatalytic degradation of organic dyes and toxic pollutants under visible irradiation, and thus are of significant interest for organic waste treatment and environmental remediation.

  11. Gamma radiation effects on silicon photonic waveguides.

    PubMed

    Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

    2016-07-01

    To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad.

  12. Narrow band gap amorphous silicon semiconductors

    DOEpatents

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  13. Epitaxial growth of silicon for layer transfer

    DOEpatents

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  14. Aluminum gettering in single and multicrystalline silicon

    SciTech Connect

    McHugo, S.A.; Hieslmair, H.; Weber, E.R.

    1995-08-01

    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  15. High purity silane and silicon production

    NASA Technical Reports Server (NTRS)

    Breneman, William C. (Inventor)

    1987-01-01

    Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

  16. Nitrodifluoraminoterphenyl compounds and processes

    DOEpatents

    Lerom, M.W.; Peters, H.M.

    1975-07-08

    This patent relates to the nitrodifluoraminoterphenyl compounds: 3,3''-bis (difluoramino)-2,2'' 4,4', 4'',6,6',6''-octanitro-m-terphenyl (DDONT) and 3,3''-bis(difluoramino)-2,2',2''4,4',4'',6,6',6''-nonanitro-m-terphenyl (DDNONA). Procedures are described wherein diamino precursors of the indicated compounds are prepared and the final compounds are obtained by a fluorination operation. The compounds are highly energetic and suitable for use as explosives and particularly in exploding bridge wire (EBW) detonators. (auth)

  17. Silicon photonics: some remaining challenges

    NASA Astrophysics Data System (ADS)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  18. Chemical state depth profiling by Auger signal decomposition: Silicon oxynitride

    SciTech Connect

    Nelson, G.C.

    1989-01-01

    Thin silicon nitride (Si/sub 3/N/sub 4/) films are widely used as a dielectric in metal-nitride-oxide-silicon (MNOS) structures for radiation hard non-volatile memories. The retention of charge in these devices depends, among other things, on the chemistry of the films. It has been reported that charge transport in MNOS structures can be reduced by replacing the Si/sub 3/N/sub 4/ film by a silicon oxynitride (SiO/sub x/N/sub y/) film. In order to understand the relationship between chemistry and retention of charge, it is necessary to have a technique that can determine the chemistry of the films as a function of depth. This can be accomplished with Auger electron spectroscopy by using fingerprint spectra for each of the elements and compounds present in the sample. By using classical least-squares techniques, a unique combination of the standard spectra can be found that best fits the unknown spectrum. When this method is repeated for each spectrum in a depth profile, a chemical state depth profile is obtained. The use of this technique to profile oxynitride films where the SiO/sub 2/ content varies between 0 and 12 atomic percent is presented. 6 refs., 7 figs.

  19. Ceramic composites reinforced with modified silicon carbide whiskers

    DOEpatents

    Tiegs, Terry N.; Lindemer, Terrence B.

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  20. Method for removing oxide contamination from silicon carbide powders

    DOEpatents

    Brynestad, J.; Bamberger, C.E.

    1984-08-01

    The described invention is directed to a method for removing oxide contamination in the form of oxygen-containing compounds such as SiO/sub 2/ and B/sub 2/O/sub 3/ from a charge of finely divided silicon carbide. The silicon carbide charge is contacted with a stream of hydrogen fluoride mixed with an inert gas carrier such as argon at a temperature in the range of about 200/sup 0/ to 650/sup 0/C. The oxides in the charge react with the heated hydrogen fluoride to form volatile gaseous fluorides such as SiF/sub 4/ and BF/sub 3/ which pass through the charge along with unreacted hydrogen fluoride and the carrier gas. Any residual gaseous reaction products and hydrogen fluoride remaining in the charge are removed by contacting the charge with the stream of inert gas which also cools the powder to room temperature. The removal of the oxygen contamination by practicing the present method provides silicon carbide powders with desirable pressing and sintering characteristics. 1 tab.