Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

High index glass thin film processing for photonics and photovoltaic (PV) applications

NASA Astrophysics Data System (ADS)

Ogbuu, Okechukwu Anthony

To favorably compete with fossil-fuel technology, the greatest challenge for thin film solar-cells is to improve efficiency and reduce material cost. Thickness scaling to thin film reduces material cost but affects the light absorption in the cells; therefore a concept that traps incident photons and increases its optical path length is needed to boost absorption in thin film solar cells. One approach is the integration of low symmetric gratings (LSG), using high index material, on either the front-side or backside of 30 um thin c-Si cells. In this study, Multicomponent TeO2--Bi2O 3--ZnO (TBZ) glass thin films were prepared using RF magnetron sputtering under different oxygen flow rates. The influences of oxygen flow rate on the structural and optical properties of the resulting thin films were investigated. The structural origin of the optical property variation was studied using X-ray diffraction, X-ray photoelectron spectroscopy, Raman Spectroscopy, and transmission electron microscopy. The results indicate that TBZ glass thin film is a suitable material for front side LSG material photovoltaic and photonics applications due to their amorphous nature, high refractive index (n > 2), broad band optical transparency window, low processing temperature. We developed a simple maskless method to pattern sputtered tellurite based glass thin films using unconventional agarose hydrogel mediated wet etching. Conventional wet etching process, while claiming low cost and high throughput, suffers from reproducibility and pattern fidelity issues due to the isotropic nature of wet chemical etching when applied to glasses and polymers. This method overcomes these challenges by using an agarose hydrogel stamp to mediate a conformal etching process. In our maskless method, agarose hydrogel stamps are patterned following a standard soft lithography and replica molding process from micropatterned masters and soaked in a chemical etchant. The micro-scale features on the stamp are

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. PMID:28773242

Performance improvement for solution-processed high-mobility ZnO thin-film transistors

NASA Astrophysics Data System (ADS)

Sha Li, Chen; Li, Yu Ning; Wu, Yi Liang; Ong, Beng S.; Loutfy, Rafik O.

2008-06-01

The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

An acetate precursor process for BSCCO (2223) thin films and coprecipitated powders

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1992-01-01

Since the discovery of high temperature superconducting oxides much attention has been paid to finding better and useful ways to take advantage of the special properties exhibited by these materials. One such process is the development of thin films for engineering applications. Another such process is the coprecipitation route to producing superconducting powders. An acetate precursor process for use in thin film fabrication and a chemical coprecipitation route to Bismuth based superconducting materials has been developed. Data obtained from the thin film process were inconclusive to date and require more study. The chemical coprecipitation method of producing bulk material is a viable method, and is preferred over the previously used solid state route. This method of powder production appears to be an excellent route to producing thin section tape cast material and screen printed devices, as it requires less calcines than the oxide route to produce quality powders.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

Development of high efficiency thin film polycrystalline silicon solar cells using VEST process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishihara, T.; Arimoto, S.; Morikawa, H.

1998-12-31

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763)more » with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.« less

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Thin film processing of photorefractive BaTiO3

NASA Technical Reports Server (NTRS)

Schuster, Paul R.; Potember, Richard S.

1991-01-01

The principle objectives of this ongoing research involve the preparation and characterization of polycrystalline single-domain thin films of BaTiO3 for photorefractive applications. These films must be continuous, free of cracks, and of high optical quality. The two methods proposed are sputtering and sol-gel related processing.

Front and backside processed thin film electronic devices

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Liquid-Phase Processing of Barium Titanate Thin Films

NASA Astrophysics Data System (ADS)

Harris, David Thomas

Processing of thin films introduces strict limits on the thermal budget due to substrate stability and thermal expansion mismatch stresses. Barium titanate serves as a model system for the difficulty in producing high quality thin films because of sensitivity to stress, scale, and crystal quality. Thermal budget restriction leads to reduced crystal quality, density, and grain growth, depressing ferroelectric and nonlinear dielectric properties. Processing of barium titanate is typically performed at temperatures hundreds of degrees above compatibility with metalized substrates. In particular integration with silicon and other low thermal expansion substrates is desirable for reductions in costs and wider availability of technologies. In bulk metal and ceramic systems, sintering behavior has been encouraged by the addition of a liquid forming second phase, improving kinetics and promoting densification and grain growth at lower temperatures. This approach is also widespread in the multilayer ceramic capacitor industry. However only limited exploration of flux processing with refractory thin films has been performed despite offering improved dielectric properties for barium titanate films at lower temperatures. This dissertation explores physical vapor deposition of barium titanate thin films with addition of liquid forming fluxes. Flux systems studied include BaO-B2O3, Bi2O3-BaB2O 4, BaO-V2O5, CuO-BaO-B2O3, and BaO-B2O3 modified by Al, Si, V, and Li. Additions of BaO-B2O3 leads to densification and an increase in average grain size from 50 nm to over 300 nm after annealing at 900 °C. The ability to tune permittivity of the material improved from 20% to 70%. Development of high quality films enables engineering of ferroelectric phase stability using residual thermal expansion mismatch in polycrystalline films. The observed shifts to TC match thermodynamic calculations, expected strain from the thermal expansion coefficients, as well as x-ray diffract measurements

Investigation for surface resistance of yttrium-barium-copper-oxide thin films on various substrates for microwave applications

NASA Astrophysics Data System (ADS)

Yao, Hongjun

High temperature superconducting (HTS) materials such as YBCO (Yttrium-Barium-Copper-Oxide) are very attractive in microwave applications because of their extremely low surface resistance. In the proposed all-HTS tunable filter, a layer of HTS thin film on a very thin substrate (100 mum) is needed to act as the toractor that can be rotated to tune the frequency. In order to provide more substrate candidates that meet both electrical and mechanical requirements for this special application, surface resistance of YBCO thin films on various substrates was measured using microstrip ring resonator method. For alumina polycrystalline substrate, a layer of YSZ (Yttrium stabilized Zirconia) was deposited using IBAD (ion beam assisted deposition) method prior to YBCO deposition. The surface resistance of the YBCO thin film on alumina was found to be 22 mO due to high-angle grain boundary problem caused by the mixed in-plane orientations and large FWHM (full width at half maximum) of the thin film. For YBCO thin films on a YSZ single crystal substrate, the surface resistance showed even higher value of 30 mO because of the mixed in-plane orientation problem. However, by annealing the substrate in 200 Torr oxygen at 730°C prior to deposition, the in-plane orientation of YBCO thin films can be greatly improved. Therefore, the surface resistance decreased to 1.4 mO, which is still more than an order higher than the reported best value. The YBCO thin films grown on LaAlO3 single crystal substrate showed perfect in-plane orientation with FWHM less 1°. The surface resistance was as low as 0.032 mO. A tunable spiral resonator made of YBCO thin film on LaAlO3 single crystal substrate demonstrated that the resonant frequency can be tuned in a rang as large as 500 MHz by changing the gap between toractor and substrate. The Q-factor was more than 12,000, which ensured the extraordinarily high sensitivity for the proposed all-HTS tunable filter.

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

PubMed

Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

2015-03-04

A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, Fred; Truher, Joel B.; Kaschmitter, James L.; Colella, Nicholas J.

1998-02-03

A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.

Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications

NASA Astrophysics Data System (ADS)

Faÿ, S.; Shah, A.

Metalorganic chemical vapor deposition of ZnO films (MOCVD) [1] started to be comprehensively investigated in the 1980s, when thin film industries were looking for ZnO deposition processes especially useful for large-scale coatings at high growth rates. Later on, when TCO for thin film solar cells started to be developed, another advantage of growing TCO films by the CVD process has been highlighted: the surface roughness. Indeed, a large number of studies on CVD ZnO revealed that an as-grown rough surface cn be obtained with this deposition process [2-4]. A rough surface induces a light scattering effect, which can significantly improve light trapping (and therefore current photo-generation) within thin film silicon solar cells. The CVD process, indeed, directly leads to as-grown rough ZnO films without any post-etching step (the latter is often introduced to obtain a rough surface, when working with as-deposited flat sputtered ZnO). This fact could turn out to be a significant advantage when upscaling the manufacturing process for actual commercial production of thin film solar modules. The zinc and oxygen sources for CVD growth of ZnO films are given in Table 6.1.

Fabrication of polycrystalline thin films by pulsed laser processing

DOEpatents

Mitlitsky, F.; Truher, J.B.; Kaschmitter, J.L.; Colella, N.J.

1998-02-03

A method is disclosed for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells. 1 fig.

Printable CIGS thin film solar cells

NASA Astrophysics Data System (ADS)

Fan, Xiaojuan

2014-03-01

Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

Method for double-sided processing of thin film transistors

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norwood, D P

1989-01-31

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

The dependence of stress in IBAD films on the ion-irradiation energy and flux

NASA Astrophysics Data System (ADS)

Schweitz, K. O.; Arndt, J.; Bøttiger, J.; Chevallier, J.

1997-05-01

Systematic experimental studies of the stress build-up during e-gun deposition of Ni with simultaneous bombardment by energetic Ar + ions (IBAD) have been carried out. The ion energy E was varied from 60 to 800 eV, and the ratio of the arrival rates of Ni atoms and Ar + ions, {R}/{J}, was varied from 0.5 to 6.4. The Ni-deposition rate was in the range from 0.5 to 2.0 Å/s, with all the depositions carried out near room temperature in a chamber with the base pressure of 5 × 10 -6 Pa. The film stress was measured by use of profilometry and the application of Stoney's equation. The experimental results were compared with predictions of a simple model proposed by Davis. This model assumes that the compressive stress build-up, due to knock-on implantation of film atoms being proportional to E {1}/{2}, is balanced by relaxation by collision-cascade-excited atom migration proportional to E {5}/{3}. To obtain agreement between model and experiment in the investigated ranges of E and {R}/{J}, an additional model parameter had to be added which takes into account that without irradiation, tensile stresses arise.

Gas expanded polymer process to anneal nanoparticle dispersion in thin films

DOE PAGES

Ambuken, Preejith V.; Stretz, Holly A.; Dadmun, Mark; ...

2015-04-21

A spin-coating solution comprising poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) nanoparticles used to create organic photovoltaic (OPV) active layers have been shown to adopt a non-uniform concentration profile across the thin film dimension. This inhomogeneous distribution can reduce the efficiency of the device. For our new process, gas expanded polymer (GXP) annealing, is applied to P3HT/PCBM thin film blends, enabling the distribution of the PCBM nanoparticles to be manipulated by varying the GXP processing conditions. Films of 50 nm thickness (nominally) created by spin casting a blend of P3HT mixed with PCBM were annealed by oscillatory GXP andmore » GXP at constant pressure using high pressure CO 2. An increase in P3HT crystallinity (detected by X-ray diffraction and UV-vis spectroscopy) along with a more uniform distribution of PCBM nanoparticles in the thickness dimension, as interpreted from neutron reflectivity measurements, were observed after oscillatory GXP annealing. In addition, static water contact angles suggest that the film/air interface is enriched in PCBM relative to the as-cast film. Finally, these results demonstrate that GXP annealing, which is commercially scalable, can be successfully used to create a uniform distribution of PCBM nanoparticles across the thickness dimension in a P3HT thin film.« less

Optimization and testing of solid thin film lubrication deposition processes

NASA Astrophysics Data System (ADS)

Danyluk, Michael J.

A novel method for testing solid thin films in rolling contact fatigue (RCF) under ultra-high vacuum (UHV) and high rotational speeds (130 Hz) is presented in this thesis. The UHV-RCF platform is used to quantify the adhesion and lubrication aspects of two thin film coatings deposited on ball-bearings using a physical vapor deposition ion plating process. Plasma properties during ion plating were measured using a Langmuir probe and there is a connection between ion flux, film stress, film adhesion, process voltage, pressure, and RCF life. The UHV-RCF platform and vacuum chamber were constructed using off-the-shelf components and 88 RCF tests in high vacuum have been completed. Maximum RCF life was achieved by maintaining an ion flux between 10 13 to 1015 (cm-2 s-1) with a process voltage and pressure near 1.5 kV and 15 mTorr. Two controller schemes were investigated to maintain optimal plasma conditions for maximum RCF life: PID and LQR. Pressure disturbances to the plasma have a detrimental effect on RCF life. Control algorithms that mitigate pressure and voltage disturbances already exist. However, feedback from the plasma to detect disturbances has not been explored related to deposition processes in the thin-film science literature. Manometer based pressure monitoring systems have a 1 to 2 second delay time and are too slow to detect common pressure bursts during the deposition process. Plasma diagnostic feedback is much faster, of the order of 0.1 second. Plasma total-current feedback was used successfully to detect a typical pressure disturbance associated with the ion plating process. Plasma current is related to ion density and process pressure. A real-time control application was used to detect the pressure disturbance by monitoring plasma-total current and converting it to feedback-input to a pressure control system. Pressure overshoot was eliminated using a nominal PID controller with feedback from a plasma-current diagnostic measurement tool.

Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

DTIC Science & Technology

2015-03-26

THIN - FILM - TRANSISTORS THESIS Thomas M. Donigan, First Lieutenant, USAF AFIT-ENG-MS-15-M-027 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR...DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS THESIS Presented to the Faculty Department of Electrical and...15-M-027 SUBTRACTIVE PLASMA-ASSISTED-ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS

Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

PubMed

Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

2014-11-05

Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

Epitaxial hexagonal materials on IBAD-textured substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matias, Vladimir; Yung, Christopher

2017-08-15

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substratesmore » to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.« less

Optimization of process parameters for RF sputter deposition of tin-nitride thin-films

NASA Astrophysics Data System (ADS)

Jangid, Teena; Rao, G. Mohan

2018-05-01

Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600°C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.

Combinatorial techniques to efficiently investigate and optimize organic thin film processing and properties.

PubMed

Wieberger, Florian; Kolb, Tristan; Neuber, Christian; Ober, Christopher K; Schmidt, Hans-Werner

2013-04-08

In this article we present several developed and improved combinatorial techniques to optimize processing conditions and material properties of organic thin films. The combinatorial approach allows investigations of multi-variable dependencies and is the perfect tool to investigate organic thin films regarding their high performance purposes. In this context we develop and establish the reliable preparation of gradients of material composition, temperature, exposure, and immersion time. Furthermore we demonstrate the smart application of combinations of composition and processing gradients to create combinatorial libraries. First a binary combinatorial library is created by applying two gradients perpendicular to each other. A third gradient is carried out in very small areas and arranged matrix-like over the entire binary combinatorial library resulting in a ternary combinatorial library. Ternary combinatorial libraries allow identifying precise trends for the optimization of multi-variable dependent processes which is demonstrated on the lithographic patterning process. Here we verify conclusively the strong interaction and thus the interdependency of variables in the preparation and properties of complex organic thin film systems. The established gradient preparation techniques are not limited to lithographic patterning. It is possible to utilize and transfer the reported combinatorial techniques to other multi-variable dependent processes and to investigate and optimize thin film layers and devices for optical, electro-optical, and electronic applications.

Drop dynamics on a thin film: Thin film rupture

NASA Astrophysics Data System (ADS)

Carlson, Andreas; Kim, Pilnam; Stone, Howard A.

2011-11-01

The spreading of a water drop on an oil film that covers a solid substrate is a common event in many industrial processes. We study in experiments the dynamics of a water drop on a thin silicone oil film and quantify its interaction with the solid substrate that supports the film. The oil film becomes unstable and ruptures for solids that are hydrophilic. We determine the ``waiting time,'' the time it takes the water drop to drain the silicone film. This timescale is found to highly depend on how well water wets the solid, illustrating the interplay between intermolecular and hydrodynamic forces in the phenomenon. A phase diagram for the thin film stability is extracted based on waters equilibrium contact angle on the solid, which shows that we can either promote or inhibit de-wetting. As water comes in direct contact with the solid, it spreads and peels off the silicone film. We show the influence of viscosity, equilibrium contact angle and film height on the opening radius of the hole formed as the solid de-wets.

Low-Cost Detection of Thin Film Stress during Fabrication

NASA Technical Reports Server (NTRS)

Nabors, Sammy A.

2015-01-01

NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, S.P.; Chamberlin, R.

1999-02-09

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells. 13 figs.

Thin film photovoltaic device and process of manufacture

DOEpatents

Albright, Scot P.; Chamberlin, Rhodes

1997-10-07

Provided is a thin film photovoltaic device and a method of manufacturing the device. The thin film photovoltaic device comprises a film layer having particles which are smaller than about 30 microns in size held in an electrically insulating matrix material to reduce the potential for electrical shorting through the film layer. The film layer may be provided by depositing preformed particles onto a surrogate substrate and binding the particles in a film-forming matrix material to form a flexible sheet with the film layer. The flexible sheet may be separated from the surrogate substrate and cut into flexible strips. A plurality of the flexible strips may be located adjacent to and supported by a common supporting substrate to form a photovoltaic module having a plurality of electrically interconnected photovoltaic cells.

Thin-Film Material Science and Processing | Materials Science | NREL

Science.gov Websites

, a prime example of this research is thin-film photovoltaics (PV). Thin films are important because have developed a quantitative high-throughput technique that can measure many barriers in parallel with

Process for making dense thin films

DOEpatents

Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

2005-07-26

Provided are low-cost, mechanically strong, highly electronically conductive porous substrates and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical device substrates of novel composition and techniques for forming thin electrode/membrane/electrolyte coatings on the novel or more conventional substrates. In particular, in one embodiment the invention provides techniques for firing of device substrate to form densified electrolyte/membrane films 5 to 20 microns thick. In another embodiment, densified electrolyte/membrane films 5 to 20 microns thick may be formed on a pre-sintered substrate by a constrained sintering process. In some cases, the substrate may be a porous metal, alloy, or non-nickel cermet incorporating one or more of the transition metals Cr, Fe, Cu and Ag, or alloys thereof.

Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

PubMed

Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

2012-11-27

The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

NASA Technical Reports Server (NTRS)

Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

2011-01-01

Polycrystalline superconducting Nb thin films are extensively used for submillimeter and millimeter transmission line applications and, less commonly, used in microwave kinetic inductance detector (MKID) applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the x-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

NASA Technical Reports Server (NTRS)

Brown, Ari David; Barrentine, Emily M.; Moseley, Samuel H.; Noroozian, Omid; Stevenson, Thomas

2016-01-01

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

PubMed

Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

2014-11-01

Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

In-space fabrication of thin-film structures

NASA Technical Reports Server (NTRS)

Lippman, M. E.

1972-01-01

A conceptual study of physical vapor-deposition processes for in-space fabrication of thin-film structures is presented. Potential advantages of in-space fabrication are improved structural integrity and surface reflectivity of free-standing ultra-thin films and coatings. Free-standing thin-film structures can find use as photon propulsion devices (solar sails). Other applications of the concept involve free-standing shadow shields, or thermal control coatings of spacecraft surfaces. Use of expendables (such as booster and interstage structures) as source material for the physical vapor deposition process is considered. The practicability of producing thin, textured, aluminum films by physical vapor deposition and subsequent separation from a revolving substrate is demonstrated by laboratory experiments. Heating power requirement for the evaporation process is estimated for a specific mission.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOEpatents

Norwood, David P.

1989-01-01

A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norwood, D.P.

1989-01-31

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

Glass transition dynamics of stacked thin polymer films

NASA Astrophysics Data System (ADS)

Fukao, Koji; Terasawa, Takehide; Oda, Yuto; Nakamura, Kenji; Tahara, Daisuke

2011-10-01

The glass transition dynamics of stacked thin films of polystyrene and poly(2-chlorostyrene) were investigated using differential scanning calorimetry and dielectric relaxation spectroscopy. The glass transition temperature Tg of as-stacked thin polystyrene films has a strong depression from that of the bulk samples. However, after annealing at high temperatures above Tg, the stacked thin films exhibit glass transition at a temperature almost equal to the Tg of the bulk system. The α-process dynamics of stacked thin films of poly(2-chlorostyrene) show a time evolution from single-thin-film-like dynamics to bulk-like dynamics during the isothermal annealing process. The relaxation rate of the α process becomes smaller with increase in the annealing time. The time scale for the evolution of the α dynamics during the annealing process is very long compared with that for the reptation dynamics. At the same time, the temperature dependence of the relaxation time for the α process changes from Arrhenius-like to Vogel-Fulcher-Tammann dependence with increase of the annealing time. The fragility index increases and the distribution of the α-relaxation times becomes smaller with increase in the annealing time for isothermal annealing. The observed change in the α process is discussed with respect to the interfacial interaction between the thin layers of stacked thin polymer films.

Miniature hybrid microwave IC's using a novel thin-film technology

NASA Astrophysics Data System (ADS)

Eda, Kazuo; Miwa, Tetsuji; Taguchi, Yutaka; Uwano, Tomoki

1990-12-01

A novel thin-film technology for miniature hybrid microwave ICs is presented. All passive components, such as resistors and capacitors, are fully integrated on ordinary alumina ceramic substrates using the thin-film technology with very high yield. The numbers of parts and wiring processes were significantly reduced. This technology was applied to the fabrication of Ku-band solid-state power amplifiers. This thin-film technology offers the following advantages: (1) a very high yield fabrication process of thin-film capacitor having excellent electrical characteristics in the gigahertz range (Q = 230 at 12 GHz) and reliability: (2) two kinds of thin-film resistors having different temperature coefficients of resistivity and a lift-off process to integrate them with thin-film capacitors; and (3) a matching method using the thin-film capacitor.

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn; State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000; Zhang, Yanmin

2013-11-14

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructuremore » after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.« less

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Pei-Jou; Yang, Cheng-Fu; Huang, Hong-Hsin

2015-01-01

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N2 atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C. PMID:28793598

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Pei-Jou; Yang, Cheng-Fu; Huang, Hong-Hsin

2015-10-02

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs' applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N₂ atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C.

Enhanced electrical properties in solution-processed InGaZnO thin-film transistors by viable hydroxyl group transfer process

NASA Astrophysics Data System (ADS)

Kim, Do-Kyung; Jeong, Hyeon-Seok; Kwon, Hyeok Bin; Kim, Young-Rae; Kang, Shin-Won; Bae, Jin-Hyuk

2018-05-01

We propose a simple hydroxyl group transfer method to improve the electrical characteristics of solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs). Tuned poly(dimethylsiloxane) elastomer, which has a hydroxyl group as a terminal chemical group, was adhered temporarily to an IGZO thin-film during the solidification step to transfer and supply sufficient hydroxyl groups to the IGZO thin-film. The transferred hydroxyl groups led to efficient hydrolysis and condensation reactions, resulting in a denser metal–oxygen–metal network being achieved in the IGZO thin-film compared to the conventional IGZO thin-film. In addition, it was confirmed that there was no morphological deformation, including to the film thickness and surface roughness. The hydroxyl group transferred IGZO based TFTs exhibited enhanced electrical properties (field-effect mobility of 2.21 cm2 V‑1 s‑1, and on/off current ratio of 106) compared to conventional IGZO TFTs (field-effect mobility of 0.73 cm2 V‑1 s‑1 and on/off current ratio of 105).

Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

NASA Astrophysics Data System (ADS)

Cheong, Heajeong; Kuribara, Kazunori; Ogura, Shintaro; Fukuda, Nobuko; Yoshida, Manabu; Ushijima, Hirobumi; Uemura, Sei

2016-04-01

We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field-effect mobility of 0.9 cm2·V-1·s-1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.

Synthesis of LiCoO 2 thin films by sol/gel process

NASA Astrophysics Data System (ADS)

Porthault, H.; Le Cras, F.; Franger, S.

LiCoO 2 thin films were synthesized by sol/gel process using acrylic acid (AA) as chelating agent. The gel formulation was optimized by varying solvent (ethylene glycol or water) and precursors molar ratios (Li, Co, AA) in order to obtain a dense film for positive electrode of lithium batteries. The gel was deposited by spin-coating technique on an Au/TiO 2/SiN/SiO 2/Si substrate. Thin films were deposited by either single or multistep process to enhance the density of the thin film and then calcined during 5 h at 800 °C to obtain the R-3m phase (HT-LiCoO 2). A chemical characterization of the solution was realized by Fourier Transform Infrared (FTIR) spectroscopy. Thermal decomposition of precursors and gel was studied by Thermo Gravimetric Analyses (TGA). Further investigations were done to characterize rheologic behaviour of the gel and solvents affinity with the substrate. Crystallinity and morphology were analyzed respectively by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The formation of R-3m phase was confirmed by the electrochemical behaviour of the gel derived LiCoO 2. Cyclic voltammograms and galvanostatic cycling show typical curve shape of the HT-LiCoO 2.

Laser processing of thin-film multilayer structures: comparison between a 3D thermal model and experimental results.

PubMed

Naghshine, Babak B; Kiani, Amirkianoosh

2017-01-01

In this research, a numerical model is introduced for simulation of laser processing of thin film multilayer structures, to predict the temperature and ablated area for a set of laser parameters including average power and repetition rate. Different thin-films on Si substrate were processed by nanosecond Nd:YAG laser pulses and the experimental and numerical results were compared to each other. The results show that applying a thin film on the surface can completely change the temperature field and vary the shape of the heat affected zone. The findings of this paper can have many potential applications including patterning the cell growth for biomedical applications and controlling the grain size in fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs).

Vapor deposition of thin films

DOEpatents

Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

1992-01-01

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Thermo-optically tunable thin film devices

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.

2003-10-01

We report advances in tunable thin film technology and demonstration of multi-cavity tunable filters. Thin film interference coatings are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable components based on the properties of semiconductor thin films with large thermo-optic coefficients. The technology is based on amorphous silicon deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable thin films can be constructed in sophisticated multi-cavity, multi-layer optical designs.

Intelligent Processing of Ferroelectric Thin Films

DTIC Science & Technology

1994-05-31

unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

Processing-Structure-Property Relationships in Laser-Annealed PbSe Nanocrystal Thin Films.

PubMed

Treml, Benjamin E; Robbins, Andrew B; Whitham, Kevin; Smilgies, Detlef-M; Thompson, Michael O; Hanrath, Tobias

2015-01-01

As nanocrystal (NC) synthesis techniques and device architectures advance, it becomes increasingly apparent that new ways of connecting NCs with each other and their external environment are required to realize their considerable potential. Enhancing inter-NC coupling by thermal annealing has been a long-standing challenge. Conventional thermal annealing approaches are limited by the challenge of annealing the NC at sufficiently high temperatures to remove surface-bound ligands while at the same time limiting the thermal budget to prevent large-scale aggregation. Here we investigate nonequilibrium laser annealing of NC thin films that enables separation of the kinetic and thermodynamic aspects of nanocrystal fusion. We show that laser annealing of NC assemblies on nano- to microsecond time scales can transform initially isolated NCs in a thin film into an interconnected structure in which proximate dots "just touch". We investigate both pulsed laser annealing and laser spike annealing and show that both annealing methods can produce "confined-but-connected" nanocrystal films. We develop a thermal transport model to rationalize the differences in resulting film morphologies. Finally we show that the insights gained from study of nanocrystal mono- and bilayers can be extended to three-dimensional NC films. The basic processing-structure-property relationships established in this work provide guidance to future advances in creating functional thin films in which constituent NCs can purposefully interact.

Applications of Thin Film Thermocouples for Surface Temperature Measurement

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Holanda, Raymond

1994-01-01

Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

Thin film superconductors and process for making same

DOEpatents

Nigrey, P.J.

1988-01-21

A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

Development of textured magnesium oxide templates and bicrystals using ion beam assisted deposition

NASA Astrophysics Data System (ADS)

Vallejo, Ronald N.

Recently, there has been an increased research effort in the deposition of near-single-crystal thin films on substrates that do not provide a template for epitaxial crystalline film growth. Ion beam assisted deposition (IBAD) has been demonstrated as one of the most promising methods to artificially control the texture in thin films. Biaxially textured MgO templates of 10 nm thickness were successfully fabricated on glass and silicon substrates without any buffer layers using IBAD. This work has shed insights on several issues. First, surface morphology ˜ 1 nm or better is only a necessary condition for textured IBAD-MgO, but not a sufficient condition. Additional surface preparation must be provided for nucleation and subsequent formation of the textured IBAD-MgO templates. Second, the role of buffer layer on IBAD-MgO texturing. It was found that the ion beam pre-exposure of the substrates prior to IBAD processing provided a sufficient condition for the nucleation and subsequent texture formation of the IBAD grown films. The ion pre-exposure replaced the need for buffer layers in silicon and glass substrates. Finally, by pre-exposing the substrates to Ar + ions, it was found that the ion beam modified the surface and improved the surface roughness of the glass substrates. Textured MgO epi templates were demonstrated for the first time on polymer based substrates (polyimide). This is a crucial step in the realization of epitaxial suspended devices. To achieve an epitaxial film on a sacrificial layer, an epitaxial template film must first be grown prior to subsequent film growth. The role of ion pre-exposure and buffer layer on texture formation was investigated in this part of the work. This thesis also presents groundbreaking results on the fabrication of bicrystal MgO films and bicrystal networks using ion beam assisted deposition. Highly oriented bicrystals, with a common (100) out-of-plane orientation and (110) in-plane orientations having a tilt angle of 45�

Thin-film optical initiator

DOEpatents

Erickson, Kenneth L.

2001-01-01

A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

Effect of the Cu/Ba ratio for the YBCO deposition onto IBAD template by the MOCVD method

NASA Astrophysics Data System (ADS)

Choi, J. K.; Kim, H. J.; Jun, B. H.; Kim, C. J.

2005-10-01

YBa2Cu3O7-x (YBCO) thin films were fabricated by the metal organic chemical vapor deposition (MOCVD) using a single liquid source. The copper/barium (Cu/Ba) ratio was varied from 1.26 to 1.38 to optimize the deposition condition. The IBAD template (CeO2/YSZ/stainless steel) was used as a substrate. The growth features of the YBCO films were not significantly influenced by the Cu/Ba ratio, while the superconducting transition temperature (Tc) and critical current (Ic) depended on the Cu/Ba ratio. When Cu/Ba ratio was between 1.26 and 1.29, Tc was as low as 80 K, while as Cu/Ba ratio increased to 1.38, it increased to above 85 K. The highest Tc (89.0 K) and Ic (46.3 A/cm-width) were achieved at the Cu/Ba ratio of 1.38 (Y:Ba:Cu = 1:2.1:2.9). It indicates that the optimum Cu/Ba ratio which differs from stoichiometric balance exists for the formation of the superconducting phase with a high Tc and Ic in MOCVD method.

Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

NASA Astrophysics Data System (ADS)

Isik, Dilek

This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

NASA Astrophysics Data System (ADS)

Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

2016-06-01

In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

Low energy electron beam processing of YBCO thin films

NASA Astrophysics Data System (ADS)

Chromik, Š.; Camerlingo, C.; Sojková, M.; Štrbík, V.; Talacko, M.; Malka, I.; Bar, I.; Bareli, G.; Jung, G.

2017-02-01

Effects of low energy 30 keV electron irradiation of superconducting YBa2Cu3O7-δ thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 - 4 × 1020 electrons/cm2, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 1020 electrons/cm2. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cusbnd O chains that results in increased carrier's concentration in superconducting CuO2 planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

Broadly tunable thin-film intereference coatings: active thin films for telecom applications

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

2003-06-01

Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

Nonlinear Optical Properties of Organic and Polymeric Thin Film Materials of Potential for Microgravity Processing Studies

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin; Frazier, Donald O.; Paley, Mark S.; Penn, Benjamin; Witherow, William K.; Bank, Curtis; Shields, Angela; Hicks, Rosline; Ashley, Paul R.

1996-01-01

In this paper, we will take a closer look at the state of the art of polydiacetylene, and metal-free phthalocyanine films, in view of the microgravity impact on their optical properties, their nonlinear optical properties and their potential advantages for integrated optics. These materials have many attractive features with regard to their use in integrated optical circuits and optical switching. Thin films of these materials processed in microgravity environment show enhanced optical quality and better molecular alignment than those processed in unit gravity. Our studies of these materials indicate that microgravity can play a major role in integrated optics technology. Polydiacetylene films are produced by UV irradiation of monomer solution through an optical window. This novel technique of forming polydiacetylene thin films has been modified for constructing sophisticated micro-structure integrated optical patterns using a pre-programmed UV-Laser beam. Wave guiding through these thin films by the prism coupler technique has been demonstrated. The third order nonlinear parameters of these films have been evaluated. Metal-free phthalocyanine films of good optical quality are processed in our laboratories by vapor deposition technique. Initial studies on these films indicate that they have excellent chemical, laser, and environmental stability. They have large nonlinear optical parameters and show intrinsic optical bistability. This bistability is essential for optical logic gates and optical switching applications. Waveguiding and device making investigations of these materials are underway.

Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Susann; Czigany, Zsolt; Greczynski, Grzegorz

2013-01-15

The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CN{sub x}) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inertmore » gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N{sub 2} was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CN{sub x} thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CN{sub x} films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CN{sub x} thin films.« less

Role of Polymorphism and Thin-Film Morphology in Organic Semiconductors Processed by Solution Shearing

PubMed Central

2018-01-01

Organic semiconductors (OSCs) are promising materials for cost-effective production of electronic devices because they can be processed from solution employing high-throughput techniques. However, small-molecule OSCs are prone to structural modifications because of the presence of weak van der Waals intermolecular interactions. Hence, controlling the crystallization in these materials is pivotal to achieve high device reproducibility. In this perspective article, we focus on controlling polymorphism and morphology in small-molecule organic semiconducting thin films deposited by solution-shearing techniques compatible with roll-to-roll systems. Special attention is paid to the influence that the different experimental deposition parameters can have on thin films. Further, the main characterization techniques for thin-film structures are reviewed, highlighting the in situ characterization tools that can provide crucial insights into the crystallization mechanisms. PMID:29503976

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Improving uniformity and nanostructure of solution-processed thin films using ultrasonic substrate vibration post treatment (SVPT).

PubMed

Wang, Qin; Eslamian, Morteza

2016-04-01

The main goal of this paper is to introduce a novel mechanical method herein terms as substrate vibration post treatment (SVPT) technique, powered by ultrasonic vibration imposed on the substrate to enhance the characteristics and functionality of spun-on thin films or thin films made by similar casting techniques, such as drop and dip coating. In this technique, the as-casted wet films are placed on a substrate vibrated by an ultrasonic transducer with controlled power and duration to improve the film characteristics, such as uniformity and nanostructure. The performance of this technique is examined on spun-on PSS thin films used in polymer and perovskite solar cells and unprecedented results are presented. We first explore the influence of the vibration duration time on the characteristics of the films made by pristine PSS solution, where it is found that the optimized vibration duration for the pristine PSS film is about 10s, resulting in significant increase in the film electrical conductivity and lowered thickness and roughness. In order to further test the generality and merit of the method, thin films made using PSS solution modified with various types of surfactants and cured by the SVPT are studied. The results show that the application of the SVPT method combined with surfactant modification leads to an impressive twelve-fold increase in the conductivity of the PSS thin films compared with that of the pristine non-vibrated PSS thin films. The sole effect of the SVPT is a four-fold increase in the conductivity of pristine PSS film compared with that of the non-vibrated film. This remarkable enhancement in conductivity is further explained by the AFM phase images of PSS films, showing that the ultrasonic energy could loosen the Coulomb forces between PEDOT and PSS chains, resulting in phase separation and localized reordering of the conducting PEDOT chains leading to an increase in the electrical conductivity of the film. Highly conductive PSS thin film is

Pyrolyzed thin film carbon

NASA Technical Reports Server (NTRS)

Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor); Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor)

2010-01-01

A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

Disconnecting structure and dynamics in glassy thin films

PubMed Central

Sussman, Daniel M.; Cubuk, Ekin D.; Liu, Andrea J.

2017-01-01

Nanometrically thin glassy films depart strikingly from the behavior of their bulk counterparts. We investigate whether the dynamical differences between a bulk and thin film polymeric glass former can be understood by differences in local microscopic structure. Machine learning methods have shown that local structure can serve as the foundation for successful, predictive models of particle rearrangement dynamics in bulk systems. By contrast, in thin glassy films, we find that particles at the center of the film and those near the surface are structurally indistinguishable despite exhibiting very different dynamics. Next, we show that structure-independent processes, already present in bulk systems and demonstrably different from simple facilitated dynamics, are crucial for understanding glassy dynamics in thin films. Our analysis suggests a picture of glassy dynamics in which two dynamical processes coexist, with relative strengths that depend on the distance from an interface. One of these processes depends on local structure and is unchanged throughout most of the film, while the other is purely Arrhenius, does not depend on local structure, and is strongly enhanced near the free surface of a film. PMID:28928147

Processing And Patterning Of Thin Film Superconductors Formed By Metallo-Organic Deposition

NASA Astrophysics Data System (ADS)

Micheli, Adolph L.; Mantese, Joseph V.; Hamdi, Aboud H.

1990-04-01

elsewhere [6]. Thin films of Y-Ba-Cu and Yb-Ba-Cu were deposited onto <100> SrTiO by flooding the substrates with the appropriate neodecanoate solutions, then spin drying them at 2000 rpm for 30 s. The substrates were heated rapidly to 500?°C for 5 min in an air oven to pyrolize the metallo organics to their oxides. This process produces thin films about 200 nm thick. The spin coating process was repeated 3-6 times if thicker films were desired. X-ray diffraction analysis of films pyrolized at 500?°C shoed the presence of only microcrystallites. Room temperature resistivities of lx10 0-cm were measured for these films. No superconducting behavior was observed. After the 500?°C pyrolysis the films were further processed by RTA in flowing oxygen. The substrates were placed upon oxidized silicon wafers, rapidly heated to 850?°C for 60 s using infrared radiation produced by a bank of quartz lamps then allowed to cool to room temperature. A second rapid annealing was then performed at 920?°C for 30 s in oxygen. Thin film superconductors formed in the manner described above were very uniform in structure and thickness across the surface of the film. The grains are approximately 1 #m wide and 2 #m long, a factor of 4 larger than the grains found in furnace annealed films formed by MOD [5].

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

2010-08-31

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

2002-01-01

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer.

PubMed

Singh, Mandeep; Palazzo, Gerardo; Romanazzi, Giuseppe; Suranna, Gian Paolo; Ditaranto, Nicoletta; Di Franco, Cinzia; Santacroce, Maria Vittoria; Mulla, Mohammad Yusuf; Magliulo, Maria; Manoli, Kyriaki; Torsi, Luisa

2014-01-01

Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na(+) doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in "transient" implantable systems.

All-Ceramic Thin Film Battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

BOYLE, TIMOTHY J.; INGERSOLL, DAVID; CYGAN, RANDALL T.

2002-11-01

We have undertaken the synthesis of a thin film ''All Ceramic Battery'' (ACB) using solution route processes. Based on the literature and experimental results, we selected SnO{sub 2}, LiCoO{sub 2}, and LiLaTiO{sub 3} (LLT) as the anode, cathode, and electrolyte, respectively. Strain induced by lattice mismatch between the cathode and bottom electrode, as estimated by computational calculations, indicate that thin film orientations for batteries when thicknesses are as low as 500 {angstrom} are strongly controlled by surface energies. Therefore, we chose platinized silicon as the basal platform based on our previous experience with this material. The anode thin films weremore » generated by standard spin-cast methods and processing using a solution of [Sn(ONep)]{sub 8} and HOAc which was found to form Sn{sub 6}(O){sub 4}(ONep){sub 4}. Electrochemical evaluation showed that the SnO{sub 2} was converted to Sn{sup o} during the first cycle. The cathode was also prepared by spin coating using the novel [Li(ONep)]{sub 8} and Co(OAc){sub 2}. The films could be electrochemically cycled (i.e., charged/discharged), with all of the associated structural changes being observable by XRD. Computational models indicated that the LLT electrolyte would be the best available ceramic material for use as the electrolyte. The LLT was synthesized from [Li(ONep)]{sub 8}, [Ti(ONep){sub 4}]{sub 2}, and La(DIP){sub 3}(py){sub 3} with RTP processing at 900 C being necessary to form the perovskite phase. Alternatively, a novel route to thin films of the block co-polymer ORMOLYTE was developed. The integration of these components was undertaken with each part of the assembly being identifiably by XRD analysis (this will allow us to follow the progress of the charge/discharge cycles of the battery during use). SEM investigations revealed the films were continuous with minimal mixing. All initial testing of the thin-film cathode/electrolyte/anode ACB devices revealed electrical shorting

Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

NASA Astrophysics Data System (ADS)

Peng, Cheng-Jien

The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could

Properties of NiO thin films deposited by intermittent spray pyrolysis process

NASA Astrophysics Data System (ADS)

Reguig, B. A.; Khelil, A.; Cattin, L.; Morsli, M.; Bernède, J. C.

2007-02-01

NiO thin films have been grown on glass substrates by intermittent spray pyrolysis deposition of NiCl 2·6H 2O diluted in distilled water, using a simple "perfume atomizer". The effect of the solution molarity on their properties was studied and compared to those of NiO thin films deposited with a classical spray system. It is shown that NiO thin films crystallized in the NiO structure are achieved after deposition. Whatever the precursor molarity, the grain size is around 25-30 nm. The crystallites are preferentially oriented along the (1 1 1) direction. All the films are p-type. However, the thickness and the conductivity of the NiO films depend on the precursor contraction. By comparison with the properties of films deposited by classical spray technique, it is shown that the critical precursor concentration, which induces strong thin films properties perturbations, is higher when a perfume atomizer is used. This broader stability domain can be attributed to better chlorides decomposition during the rest time used in the perfume atomizer technique.

Laser processing of thin films for industrial packaging

NASA Astrophysics Data System (ADS)

Sozzi, Michele; Lutey, Adrian H. A.; Cucinotta, Annamaria; Selleri, Stefano; Molari, Pier Gabriele

2014-05-01

Single layer thin-film materials such as aluminum, polyethylene, polypropylene, and their multi-layer combinations such as aluminum-paper have been exposed to different laser radiation. A wide number of samples have been processed with 10 - 12.5 ns IR and Green, and 500 - 800 ps IR laser radiation at different translating speeds ranging from 50 mm/s to 1 m/s. High quality incisions have been obtained for all tested materials within the experimental conditions. The presented results provide the necessary parameters for an efficient cut and processing of the tested materials, for the employment of pulsed laser sources in the packaging industry, allowing the laser to prevail in lieu of more costly and energy intensive methods.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, Boyd W.; Paulikas, Arvydas; Balachandran, Uthamalingam; Zhong, Wei

1999-01-01

A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

Thin film seeds for melt processing textured superconductors for practical applications

DOEpatents

Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

1999-02-09

A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

PubMed Central

Fukuda, Kenjiro; Takeda, Yasunori; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-01-01

Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays. PMID:24492785

Dewetting of Thin Polymer Films

NASA Astrophysics Data System (ADS)

Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

2001-03-01

DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

Post-growth process for flexible CdS/CdTe thin film solar cells with high specific power.

PubMed

Cho, Eunwoo; Kang, Yoonmook; Kim, Donghwan; Kim, Jihyun

2016-05-16

We demonstrated a flexible CdS/CdTe thin film solar cell with high specific power of approximately 254 W/kg. A flexible and ultra-light weight CdS/CdTe cell treated with pre-NP etch process exhibited high conversion efficiency of 13.56% in superstrate configuration. Morphological, structural and optical changes of CdS/CdTe thin films were characterized when pre-NP etch step was incorporated to the conventional post-deposition process. Improvement of photovoltaic parameters can be attributed to the removal of the oxide and the formation of Te-rich layer, which benefit the activation process. Pre-NP etched cell maintained their flexibility and performance under the repeated tensile strain of 0.13%. Our method can pave a way for manufacturing flexible CdS/CdTe thin film solar cells with high specific power for mobile and aerospace applications.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Microstructure evolution and coercivity enhancement in Nd-Fe-B thin films diffusion-processed by R-Al alloys (R=Nd, Pr)

NASA Astrophysics Data System (ADS)

Xie, Yigao; Yang, Yang; Zhang, Tongbo; Fu, Yanqing; Jiang, Qingzheng; Ma, Shengcan; Zhong, Zhenchen; Cui, Weibin; Wang, Qiang

2018-05-01

Diffusion process by Nd-Al and Pr-Al alloys was compared and investigated in Nd-Fe-B thin films. Enhanced coercivity 2.06T and good squareness was obtained by using Pr85Al15 and Nd85Al15 alloys as diffusion sources. But the coercivity of diffusion-processed thin films by Pr70Al30 and Pr55Al45 alloys decreased to 2.04T and 1.82T. High ambient coercivity of 2.26T was achieved in diffusion-processed thin film by Nd70Al30 leading to an improved coercivity thermal stability because Nd2Fe14B grains were enveloped by Nd-rich phase as seen by transmission electron microscopy Nd-loss image. Meanwhile, microstructure-dependent parameters α and Neff were improved. However, high content of Al in diffusion-processed thin film by Nd55Al45 lead to degraded texture and coercivity.

Sol processing of conjugated carbon nitride powders for thin-film fabrication.

PubMed

Zhang, Jinshui; Zhang, Mingwen; Lin, Lihua; Wang, Xinchen

2015-05-18

The chemical protonation of graphitic carbon nitride (CN) solids with strong oxidizing acids, for example HNO3, is demonstrated as an efficient pathway for the sol processing of a stable CN colloidal suspension, which can be translated into thin films by dip/disperse-coating techniques. The unique features of CN colloids, such as the polymeric matrix and the reversible hydrogen bonding, result in the thin-film electrodes derived from the sol solution exhibiting a high mechanical stability with improved conductivity for charge transport, and thus show a remarkably enhanced photo-electrochemical performance. The polymer system can in principle be broadly tuned by hybridization with desired functionalities, thus paving the way for the application of CN for specific tasks, as exemplified here by coupling with carbon nanotubes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Process for producing Ti-Cr-Al-O thin film resistors

DOEpatents

Jankowski, Alan F.; Schmid, Anthony P.

2001-01-01

Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors.

PubMed

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-10-19

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

Surface Modification of Solution-Processed ZrO2 Films through Double Coating for Pentacene Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Kwon, Jin-Hyuk; Bae, Jin-Hyuk; Lee, Hyeonju; Park, Jaehoon

2018-03-01

We report the modification of surface properties of solution-processed zirconium oxide (ZrO2) dielectric films achieved by using double-coating process. It is proven that the surface properties of the ZrO2 film are modified through the double-coating process; the surface roughness decreases and the surface energy increases. The present surface modification of the ZrO2 film contributes to an increase in grain size of the pentacene film, thereby increasing the field-effect mobility and decreasing the threshold voltage of the pentacene thin-film transistors (TFTs) having the ZrO2 gate dielectric. Herein, the molecular orientation of pentacene film is also studied based on the results of contact angle and X-ray diffraction measurements. Pentacene molecules on the double-coated ZrO2 film are found to be more tilted than those on the single-coated ZrO2 film, which is attributed to the surface modification of the ZrO2 film. However, no significant differences are observed in insulating properties between the single-and the double-coated ZrO2 dielectric films. Consequently, the characteristic improvements of the pentacene TFTs with the double-coated ZrO2 gate dielectric film can be understood through the increase in pentacene grain size and the reduction in grain boundary density.

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

PubMed Central

Zhang, Xue; Lee, Hyeonju; Kim, Jungwon; Kim, Eui-Jik; Park, Jaehoon

2017-01-01

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. PMID:29283408

Thin film superconductor magnetic bearings

DOEpatents

Weinberger, Bernard R.

1995-12-26

A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

In-situ ellipsometry: applications to thin film research, development, and production

NASA Astrophysics Data System (ADS)

Kief, M. T.

1999-07-01

Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of thin film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable - insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

Deposition of zinc sulfide thin films by chemical bath process

NASA Astrophysics Data System (ADS)

Oladeji, Isaiah O.; Chow, Lee

1996-11-01

Deposition of high quality zinc sulfide (ZnS) thin film over a large area is required if it is to be effectively used in electroluminescent devices, solar cells, and other optoelectronic devices. Of all deposition techniques, chemical bath deposition (CBD) is the least costly technique that meets the above requirements. Recently it is found that the growth of ZnS film, of thickness less than 100 nm in a single dip, by CBD is facilitated by the use of ammonia and hydrazine as complexing agents. Here we report that the thickness of the deposited ZnS film can be increased if ammonium salt is used as a buffer. We also present an analytical study to explain our results and to further understand the ZnS growth process in CBD.

Vibration welding system with thin film sensor

DOEpatents

Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

2014-03-18

A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

[Spectral emissivity of thin films].

PubMed

Zhong, D

2001-02-01

In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

Advances in Thin Film Thermocouple Durability Under High Temperature and Pressure Testing Conditions

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Fralick, Gustave C.; Taylor, Keith F.

1999-01-01

Thin film thermocouples for measuring material surface temperature have been previously demonstrated on several material systems and in various hostile test environments. A well-developed thin film fabrication procedure utilizing shadow masking for patterning the sensors elements had produced thin films with sufficient durability for applications in high temperature and pressure environments that exist in air-breathing and hydrogen-fueled burner rig and engine test facilities. However, while shadow masking had been a reliable method for specimens with flat and gently curved surfaces, it had not been consistently reliable for use on test components with sharp contours. This work reports on the feasibility of utilizing photolithography processing for patterning thin film thermocouples. Because this patterning process required changes in the thin film deposition process from that developed for shadow masking, the effect of these changes on thin film adherence during burner rig testing was evaluated. In addition to the results of changing the patterning method, the effects on thin film adherence of other processes used in the thin film fabrication procedure is also presented.

Thin film resonator technology.

PubMed

Lakin, Kenneth M

2005-05-01

Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT.

PubMed

Khafe, Adie Bin Mohd; Watanabe, Hiraku; Yamauchi, Hiroshi; Kuniyoshi, Shigekazu; Iizuka, Masaaki; Sakai, Masatoshi; Kudo, Kazuhiro

2016-04-01

The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/03 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature.

An overview of thin film nitinol endovascular devices.

PubMed

Shayan, Mahdis; Chun, Youngjae

2015-07-01

Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Reflow dynamics of thin patterned viscous films

NASA Astrophysics Data System (ADS)

Leveder, T.; Landis, S.; Davoust, L.

2008-01-01

This letter presents a study of viscous smoothening dynamics of a nanopatterned thin film. Ultrathin film manufacturing processes appearing to be a key point of nanotechnology engineering and numerous studies have been recently led in order to exhibit driving parameters of this transient surface motion, focusing on time scale accuracy method. Based on nanomechanical analysis, this letter shows that controlled shape measurements provided much more detailed information about reflow mechanism. Control of reflow process of any complex surface shape, or measurement of material parameter as thin film viscosity, free surface energy, or even Hamaker constant are therefore possible.

In-situ ellipsometry: applications to thin film research, development, and production

NASA Astrophysics Data System (ADS)

Kief, Mark T.

1999-07-01

Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of the film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable-- insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

Nanoporous structures on ZnO thin films

NASA Astrophysics Data System (ADS)

Gür, Emre; Kılıç, Bayram; Coşkun, C.; Tüzemen, S.; Bayrakçeken, Fatma

2010-01-01

Porous structures were formed on ZnO thin films which were grown by an electrochemical deposition (ECD) method. The growth processes were carried out in a solution of dimethylsulfoxide (DMSO) zinc perchlorate, Zn(ClO 4) 2, at 120 ∘C on indium tin oxide (ITO) substrates. Optical and structural characterizations of electrochemically grown ZnO thin films have shown that the films possess high (0002) c-axis orientation, high nucleation, high intensity and low FWHM of UV emission at the band edge region and a sharp UV absorption edge. Nanoporous structures were formed via self-assembled monolayers (SAMs) of hexanethiol (C 6SH) and dodecanethiol (C 12SH). Scanning electron microscope (SEM) measurements showed that while a nanoporous structure (pore radius 20 nm) is formed on the ZnO thin films by hexanathiol solution, a macroporous structure (pore radius 360 nm) is formed by dodecanethiol solution. No significant variation is observed in X-ray diffraction (XRD) measurements on the ZnO thin films after pore formation. However, photoluminescence (PL) measurements showed that green emission is observed as the dominant emission for the macroporous structures, while no variation is observed for the thin film nanoporous ZnO sample.

The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Harris Odum, Nicole Latrice

Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

NMR characterization of thin films

DOEpatents

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

DOEpatents

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

NASA Astrophysics Data System (ADS)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

DOE PAGES

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; ...

2018-02-22

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy tomore » a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Lastly, our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.« less

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness.

PubMed

Ievlev, Anton V; Chyasnavichyus, Marius; Leonard, Donovan N; Agar, Joshua C; Velarde, Gabriel A; Martin, Lane W; Kalinin, Sergei V; Maksymovych, Petro; Ovchinnikova, Olga S

2018-04-02

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Investigations into the formation of nanocrystalline quantum dot thin films by mist deposition process

NASA Astrophysics Data System (ADS)

Kshirsagar, Aditya

Semiconductor nanocrystalline quantum dots (NQDs) have material properties remarkably different compared to bulk semiconductors with the same material composition. These NQDs have various novel applications in the electronic and photonic industry, such as light emitting diodes (LEDs) and flat-panel displays. In these applications, ultra-thin films of NQDs in the monolayer regime are needed to ensure optimal current transport properties and device efficiency. There is ongoing search to find a suitable method to deposit and pattern such ultra-thin films of quantum dots with few monolayer thicknesses. Several competing approaches are available, each with its pros and cons. This study explores mist deposition as the technique to fill this void. In this study, ultra-thin films of quantum dots are deposited on diverse substrates and are characterized to understand the mechanics of mist deposition. Various applications of blanket deposited and patterned quantum dot films are studied. The results discussed here include atomic force microscopy analysis of the films to study surface morphology, fluorescence microscopy to study light emission and optical microscope images to study patterning techniques. These results demonstrate the ability of mist deposition to form 1-4 monolayers thick, uniform, defect-free patterned films with root mean square (RMS) surface roughness less than 2 nm. LEDs fabricated using mist deposition show a peak luminescence greater than 500 cd/m2 for matched red, yellow and green devices using Alq3 as the electron transport layer, and over 9000 cd/m2 for red devices using ZnO as the electron transport layer, respectively. In addition to the experimental approach to study the process and explore potential applications, simulation and modeling are carried out to understand the various aspects of mist deposition. A mathematical model is presented which discusses the atomization process of the precursor solution, the physics involved during the deposition

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

PubMed Central

Lee, Hyeonju; Zhang, Xue; Hwang, Jaeeun; Park, Jaehoon

2016-01-01

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites. PMID:28773973

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

Thin film cell development workshop report

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1991-01-01

The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

PubMed

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

Transferable and flexible thin film devices for engineering applications

NASA Astrophysics Data System (ADS)

Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

2014-05-01

Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

NASA Astrophysics Data System (ADS)

Best, James P.; Michler, Johann; Liu, Jianxi; Wang, Zhengbang; Tsotsalas, Manuel; Maeder, Xavier; Röse, Silvana; Oberst, Vanessa; Liu, Jinxuan; Walheim, Stefan; Gliemann, Hartmut; Weidler, Peter G.; Redel, Engelbert; Wöll, Christof

2015-09-01

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (EITO ≈ 96.7 GPa, EHKUST-1 ≈ 22.0 GPa). For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.

Synthesis and characterization of nanostructured bismuth selenide thin films.

PubMed

Sun, Zhengliang; Liufu, Shengcong; Chen, Lidong

2010-12-07

Nanostructured bismuth selenide thin films have been successfully fabricated on a silicon substrate at low temperature by rational design of the precursor solution. Bi(2)Se(3) thin films were constructed of coalesced lamella in the thickness of 50-80 nm. The nucleation and growth process of Bi(2)Se(3) thin films, as well as the influence of solution chemistry on the film structure were investigated in detail. As one of the most promising thermoelectric materials, the thermoelectric properties of the prepared Bi(2)Se(3) thin films were also investigated. The power factor increased with increasing carrier mobility, coming from the enlarged crystallites and enhanced coalesced structure, and reached 1 μW cm(-1) K(-1).

Simulated Thin-Film Growth and Imaging

NASA Astrophysics Data System (ADS)

Schillaci, Michael

2001-06-01

Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

Thin film thermocouples for high temperature measurement on ceramic materials

NASA Technical Reports Server (NTRS)

Holanda, Raymond

1992-01-01

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Tailoring Thin Film-Lacquer Coatings for Space Application

NASA Technical Reports Server (NTRS)

Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

1998-01-01

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's thermal control requirements, there is often a need for a variation of solar absorptance (Alpha(s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of Alpha(s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Tailoring Thin Film-Lacquer Coatings for Space Applications

NASA Technical Reports Server (NTRS)

Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

1998-01-01

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's then-nal control requirements, there is often a need for a variation of solar absorptance (alpha(sub s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of alpha(sub s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

NASA Astrophysics Data System (ADS)

Hihath, Sahar

Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

Low work function, stable thin films

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2000-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Ion-beam-assisted deposition of Au nanocluster/Nb 2O 5 thin films with nonlinear optical properties

NASA Astrophysics Data System (ADS)

Cotell, C. M.; Schiestel, S.; Carosella, C. A.; Flom, S.; Hubler, G. K.; Knies, D. L.

1997-05-01

Gold nanocluster thin films (˜ 200 nm thickness) consisting of metal clusters ˜ 5 nm in size embedded in a matrix of Nb 2O 5 were deposited by ion beam-assisted deposition (IBAD) by coevaporation of Au and Nb with O 2+ ion bombardment. The microstructure and optical characteristics of these films were examined as-deposited and after annealing at 600°C. Annealing crystallized the amorphous oxide matrix and ripened the nanoclusters. A strong linear absorption at the wavelength of the surface plasmon resonance for Au developed as a result of annealing. The linear optical behavior was modeled using Mie scattering theory. Good agreement was found between the nanocluster sizes predicted by the theory and the particle sizes observed experimentally using transmission electron microscopy (TEM). The nonlinear optical (NLO) properties of the nanocluster films were probed experimentally using degenerate four wave mixing and nonlinear transmission. The wavelength was near the peak of the surface plasmon resonance as measured by VIS/UV spectroscopy. Values of | χxxxx(3)| were 7.3 × 10 -8 and 3.0 × 10 -10 esu for annealed and unannealed samples, respe The dominant mechanism for the nonlinear response was change in dielectric constant due to the generation of a distribution of hot, photoexcited electrons.

Combination process of diamond machining and roll-to-roll UV-replication for thin film micro- and nanostructures

NASA Astrophysics Data System (ADS)

Väyrynen, J.; Mönkkönen, K.; Siitonen, S.

2016-09-01

Roll-to-roll (R2R) ultraviolet (UV) curable embossing replication process is a highly accurate and cost effective way to replicate large quantities of thin film polymer parts. These structures can be used for microfluidics, LED-optics, light guides, displays, cameras, diffusers, decorative, laser sensing and measuring devices. In the R2R UV-process, plastic thin film coated with UV-curable lacquer, passes through an imprinting embossing drum and is then hardened by an UV-lamp. One key element for mastering this process is the ability to manufacture a rotating drum containing micro- and nanostructures. Depending on the pattern shapes, the drum can be directly machined by diamond machining or it can be done through wafer level lithographical process. Due to the shrinkage of UV-curable lacquer, the R2R drum pattern process needs to be prototyped few times, in order to get the desired performance and shape from the R2R produced part. To speed up the prototyping and overall process we have developed a combination process where planar diamond machining patterns are being turned into a drum roller. Initially diamond machined patterns from a planar surface are replicated on a polymer sheet using UV-replication. Secondly, a nickel stamper shim is grown form the polymer sheet and at the end the stamper is turned into a roller and used in the R2R process. This process allows various micro milled, turned, grooved and ruled structures to be made at thin film products through the R2R process. In this paper, the process flow and examples of fabricating R2R embossed UVcurable thin film micro- and nanostructures from planar diamond machined patterns, is reported.

A thin film nitinol heart valve.

PubMed

Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

2005-11-01

In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

Atmospheric deposition process for enhanced hybrid organic-inorganic multilayer barrier thin films for surface protection

NASA Astrophysics Data System (ADS)

Rehman, Mohammad Mutee ur; Kim, Kwang Tae; Na, Kyoung Hoan; Choi, Kyung Hyun

2017-11-01

In this study, organic polymer poly-vinyl acetate (PVA) and inorganic aluminum oxide (Al2O3) have been used together to fabricate a hybrid barrier thin film for the protection of PET substrate. The organic thin films of PVA were developed through roll to roll electrohydrodynamic atomization (R2R-EHDA) whereas the inorganic thin films of Al2O3 were grown by roll to roll spatial atmospheric atomic layer deposition (R2R-SAALD) for mass production. The use of these two technologies together to develop a multilayer hybrid organic-inorganic barrier thin films under atmospheric conditions is reported for the first time. These multilayer hybrid barrier thin films are fabricated on flexible PET substrate. Each layer of Al2O3 and PVA in barrier thin film exhibited excellent morphological, chemical and optical properties. Extremely uniform and atomically thin films of Al2O3 with average arithmetic roughness (Ra) of 1.64 nm and 1.94 nm respectively concealed the non-uniformity and irregularities in PVA thin films with Ra of 2.9 nm and 3.6 nm respectively. The optical transmittance of each layer was ∼ 80-90% while the water vapor transmission rate (WVTR) of hybrid barrier was in the range of ∼ 2.3 × 10-2 g m-2 day-1 with a total film thickness of ∼ 200 nm. Development of such hybrid barrier thin films with mass production and low cost will allow various flexible electronic devices to operate in atmospheric conditions without degradation of their properties.

Segmental and local dynamics of stacked thin films of poly(methyl methacrylate)

NASA Astrophysics Data System (ADS)

Hayashi, Tatsuhiko; Fukao, Koji

2014-02-01

The glass transition temperature and the dynamics of the α and β processes have been investigated using differential scanning calorimetry and dielectric relaxation spectroscopy during successive annealing processes above the glass transition temperature for stacked thin films of poly(methyl methacrylate) (PMMA) of various thicknesses. The glass transition temperature and the dynamics of the α process (segmental motion) of as-stacked PMMA thin films exhibit thin-film-like behavior, insofar as the glass transition temperature is depressed and the dynamics of the α process are faster than those of the bulk system. Annealing at high temperature causes the glass transition temperature to increase from the reduced value and causes the dynamics of the α process to become slower approaching those of the bulk. Contrary to the segmental motion, the relaxation time of the β process (local motion) of the stacked PMMA thin films is almost equal to that of the bulk PMMA and is unaffected by the annealing process. However, the relaxation strengths of both the α process and β process show a strong correlation between each other. The sum of the relaxation strengths remains almost unchanged, while the individual relaxation strengths change during the annealing process. The fragility index of the stacked PMMA thin films increases with annealing, which suggests that the glassy state of the stacked thin films changes from strong to fragile.

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

NASA Technical Reports Server (NTRS)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Suppression of copper thin film loss during graphene synthesis.

PubMed

Lee, Alvin L; Tao, Li; Akinwande, Deji

2015-01-28

Thin metal films can be used to catalyze the growth of nanomaterials in place of the bulk metal, while greatly reducing the amount of material used. A big drawback of copper thin films (0.5-1.5 μm thick) is that, under high temperature/vacuum synthesis, the mass loss of films severely reduces the process time due to discontinuities in the metal film, thereby limiting the time scale for controlling metal grain and film growth. In this work, we have developed a facile method, namely "covered growth" to extend the time copper thin films can be exposed to high temperature/vacuum environment for graphene synthesis. The key to preventing severe mass loss of copper film during the high temperature chemical vapor deposition (CVD) process is to have a cover piece on top of the growth substrate. This new "covered growth" method enables the high-temperature annealing of the copper film upward of 4 h with minimal mass loss, while increasing copper film grain and graphene domain size. Graphene was then successfully grown on the capped copper film with subsequent transfer for device fabrication. Device characterization indicated equivalent physical, chemical, and electrical properties to conventional CVD graphene. Our "covered growth" provides a convenient and effective solution to the mass loss issue of thin films that serve as catalysts for a variety of 2D material syntheses.

Thin-film diffusion brazing of titanium alloys

NASA Technical Reports Server (NTRS)

Mikus, E. B.

1972-01-01

A thin film diffusion brazing technique for joining titanium alloys by use of a Cu intermediate is described. The method has been characterized in terms of static and dynamic mechanical properties on Ti-6Al-4V alloy. These include tensile, fracture toughness, stress corrosion, shear, corrosion fatigue, mechanical fatigue and acoustic fatigue. Most of the properties of titanium joints formed by thin film diffusion brazing are equal or exceed base metal properties. The advantages of thin film diffusion brazing over solid state diffusion bonding and brazing with conventional braze alloys are discussed. The producibility advantages of this process over others provide the potential for producing high efficiency joints in structural components of titanium alloys for the minimum cost.

Nanomechanical investigation of thin-film electroceramic/metal-organic framework multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Best, James P., E-mail: james.best@empa.ch, E-mail: engelbert.redel@kit.edu, E-mail: christof.woell@kit.edu; Michler, Johann; Maeder, Xavier

2015-09-07

Thin-film multilayer stacks of mechanically hard magnetron sputtered indium tin oxide (ITO) and mechanically soft highly porous surface anchored metal-organic framework (SURMOF) HKUST-1 were studied using nanoindentation. Crystalline, continuous, and monolithic surface anchored MOF thin films were fabricated using a liquid-phase epitaxial growth method. Control over respective fabrication processes allowed for tuning of the thickness of the thin film systems with a high degree of precision. It was found that the mechanical indentation of such thin films is significantly affected by the substrate properties; however, elastic parameters were able to be decoupled for constituent thin-film materials (E{sub ITO} ≈ 96.7 GPa, E{sub HKUST−1} ≈ 22.0 GPa).more » For indentation of multilayer stacks, it was found that as the layer thicknesses were increased, while holding the relative thickness of ITO and HKUST-1 constant, the resistance to deformation was significantly altered. Such an observation is likely due to small, albeit significant, changes in film texture, interfacial roughness, size effects, and controlling deformation mechanism as a result of increasing material deposition during processing. Such effects may have consequences regarding the rational mechanical design and utilization of MOF-based hybrid thin-film devices.« less

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

Mechanics analysis of the multi-point-load process for the thin film solar cell

NASA Astrophysics Data System (ADS)

Wang, Zhiming; Wei, Guangpu; Gong, Zhengbang

2008-02-01

The main element of thin film solar cell is silicon. Because of the special mechanical characteristic of silicon, the method of loading pressure on the thin film solar cell and the value of pressure is the key problem which must be solved during the manufacturing of thin film solar cell. This paper describes the special mechanical characteristic of silicon, discussed the test method overall; value of pressure on thin film solar cell; the elements and the method of load by ANSYS finite element, according to these theory analysis, we obtained the key conclusion in the actual operation, these result have a great meaning in industry.

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

NASA Astrophysics Data System (ADS)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Efficiency loss of thin film Cu(InxGa1-x)Se(S) solar panels by lamination process

NASA Astrophysics Data System (ADS)

Xu, Li

2017-04-01

Efficiency loss of thin film Cu(InxGa1-x)Se(S) (CIGS) solar panels by lamination process has been compromising the final output power in commercial products of solar modules, but few reports have been published on such issue, as the majority of the investigation is focused on the efficiency at the circuit level, i.e., before lamination process. In this paper, we studied the effect of lamination process to the efficiency loss of thin film CIGS solar panels. It was observed that the fill factor degradation dominated the efficiency loss with the small change of Voc and Jsc. Experiments showed that neither the temperature nor the pressure, nor the two combined in the lamination process is the root cause of the efficiency loss; instead, the ethylene vinyl acetate (EVA) layer as the encapsulation material which directly contacts the solar cell devices was the major factor responsible for the efficiency loss. It was found that the gel content of the cured EVA film after lamination was highly correlated to the efficiency loss. The higher the gel content, the higher the efficiency loss. The mismatch of coefficient of thermal expansion between the EVA film and the CIGS thin film resulted in compressive stress in the device layer after lamination process. The compressive stress is speculated to affect the lattice defects, but need to be confirmed with the measurement of capacitance voltage (CV) and drive level capacitance profiling (DLCP). Three-day sun soak was then carried out and it was observed that the fill factor recovered significantly and so did the efficiency. Experiments also showed that there was no impact of chemical erosion on the front electrode of transparent conductive oxide (TCO) films by chemicals released from the EVA films during lamination.

Fabrication and electrochemical properties of insoluble fullerene-diamine adduct thin-films as buffer layer by alternate immersion process

NASA Astrophysics Data System (ADS)

Saito, Jo; Akiyama, Tsuyoshi; Suzuki, Atsushi; Oku, Takeo

2017-01-01

Insoluble fullerene-diamine adduct thin-films consisting of C60 and 1,2-diaminoethane were easily fabricated on an electrode by an alternate immersion process. Formation of the C60-diamine adduct films were confirmed using transmission absorption spectroscopy and atomic force microscopy. An inverted-type organic solar cells were fabricated by using the C60-diamine adduct film as the electron transport layer. The resultant photoelectric conversation performance of the solar cells suggested that photocurrent is generated via the photoexcitation of polythiophene. The result suggests that the present insoluble fullerene-diamine adduct films worked as buffer layer for organic thin-film solar cells.

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

Application of surface analytical methods in thin film analysis

NASA Astrophysics Data System (ADS)

Wen, Xingu

Self-assembly and the sol-gel process are two promising methods for the preparation of novel materials and thin films. In this research, these two methods were utilized to prepare two types of thin films: self-assembled monolayers of peptides on gold and SiO2 sol-gel thin films modified with Ru(II) complexes. The properties of the resulting thin films were investigated by several analytical techniques in order to explore their potential applications in biomaterials, chemical sensors, nonlinear optics and catalysis. Among the analytical techniques employed in the study, surface analytical techniques, such as X-ray photoelectron spectroscopy (XPS) and grazing angle reflection absorption Fourier transform infrared spectroscopy (RA-FTIR), are particularly useful in providing information regarding the compositions and structures of the thin films. In the preparation of peptide thin films, monodisperse peptides were self-assembled on gold substrate via the N-terminus-coupled lipoic acid. The film compositions were investigated by XPS and agreed well with the theoretical values. XPS results also revealed that the surface coverage of the self-assembled films was significantly larger than that of the physisorbed films and that the chemisorption between the peptides and gold surface was stable in solvent. Studies by angle dependent XPS (ADXPS) and grazing angle RA-FTIR indicated that the peptides were on average oriented at a small angle from the surface normal. By using a model of orientation distribution function, both the peptide tilt angle and film thickness can be well calculated. Ru(II) complex doped SiO2 sol-gel thin films were prepared by low temperature sol-gel process. The ability of XPS coupled with Ar + ion sputtering to provide both chemical and compositional depth profile information of these sol-gel films was evaluated. This technique, together with UV-VIS and electrochemical measurements, was used to investigate the stability of Ru complexes in the composite

Preparation of high-oriented molybdenum thin films using DC reactive magnetronsputtering

NASA Astrophysics Data System (ADS)

Shang, Zhengguo; Li, Dongling; Yin, She; Wang, Shengqiang

2017-03-01

Since molybdenum (Mo) thin film has been used widely recently, it attracts plenty of attention, like it is a good candidate of back contact material for CuIn1-xGaxSe2-ySy (CIGSeS) solar cells development; thanks to its more conductive and higher adhesive property. Besides, molybdenum thin film is an ideal material for aluminum nitride (AlN) thin film preparation and attributes to the tiny (-1.0%) lattice mismatch between Mo and AlN. As we know that the quality of Mo thin film is mainly dependent on process conditions, it brings a practical significance to study the influence of process parameters on Mo thin film properties. In this work, various sputtering conditions are employed to explore the feasibility of depositing a layer of molybdenum film with good quality by DC reactive magnetron sputtering. The influence of process parameters such as power, gas flow, substrate temperature and process time on the crystallinity and crystal orientation of Mo thin films is investigated. X-ray diffraction (XRD) measurements and atomic force microscope (AFM) are used to characterize the properties and surface roughness, respectively. According to comparative analysis on the results, process parameters are optimized. The full width at half maximum (FWHM) of the rocking curves of the (110) Mo is decreased to 2.7∘, and the (110) Mo peaks reached 1.2 × 105 counts. The grain size and the surface roughness have been measured as 20 Å and 3.8 nm, respectively, at 200∘C.

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

NASA Astrophysics Data System (ADS)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

Optical and structural properties of Al-doped ZnO thin films by sol gel process.

PubMed

Jun, Min-Chul; Koh, Jung-Hyuk

2013-05-01

Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).

Epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

Thin Film Electrodes for Rare Event Detectors

NASA Astrophysics Data System (ADS)

Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

2017-01-01

In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Solution processed flexible organic thin film back-gated transistors based on polyimide dielectric films

NASA Astrophysics Data System (ADS)

Park, Janghoon; Min, Yoonki; Lee, Dongjin

2018-04-01

An organic thin film back-gated transistor (OBGT) was fabricated and characterized. The gate electrode was printed on the back side of substrate, and the dielectric layer was omitted by substituting the dielectric layer with the polyimide (PI) film substrate. Roll-to-roll (R2R) gravure printing, doctor blading, and drop casting methods were used to fabricate the OBGT. The printed OBGT device shows better performance compared with an OTFT device based on dielectric layer of BaTiO3. Additionally, a calendering process enhanced the performance by a factor of 3 to 7 (mobility: 0.016 cm2/V.s, on/off ratio: 9.17×103). A bending test was conducted to confirm the flexibility and durability of the OBGT device. The results show the fabricated device endures 20000-cyclic motions. The realized OBGT device was successfully fabricated and working, which is meaningful for production engineering from the viewpoint of process development.

Thin film DNA-complex-based dye lasers fabricated by immersion and conventional processes

NASA Astrophysics Data System (ADS)

Kawabe, Yutaka; Suzuki, Yuki

2017-08-01

DNA based thin film dye laser is one of promising optical devices for future technology. Laser oscillation and amplified spontaneous emission (ASE) were demonstrated by hemicyanine-doped DNA complex films prepared with `immersion method' as well as those made by a conventional way. In the immersion process, DNA-surfactant complex films were stained by immersion into an acetone solution including the dyes. In this study, three types of hemicyanines were incorporated with both methods, and laser oscillation was achieved with optically induced population grating formed in all of the complex films. The laser threshold values for six cases ranged in 0.07 - 0.18 mJ/cm2 , which was close to the best values made in DNA complex matrices. Continual pumping showed that laser oscillation persisted for 4 - 10 minutes. Immersion process gave superior laser capability especially for output efficiency over the conventional counterparts.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Kawamura, Yumi; Tani, Mai; Hattori, Nozomu; Miyatake, Naomasa; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

2012-02-01

We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. We deposited the ZnO channel layer by PA-ALD at 100 or 300 °C, and fabricated TFTs. The transfer characteristic of the 300 °C-deposited ZnO TFT exhibited high mobility (5.7 cm2 V-1 s-1), although the threshold voltage largely shifted toward the negative (-16 V). Furthermore, we deposited Al2O3 thin film as a gate insulator by PA-ALD at 100 °C for the low-temperature TFT fabrication process. In the case of ZnO TFTs with the Al2O3 gate insulator, the shift of the threshold voltage improved (-0.1 V). This improvement of the negative shift seems to be due to the negative charges of the Al2O3 film deposited by PA-ALD. On the basis of the experimental results, we confirmed that the threshold voltage of ZnO TFTs is controlled by PA-ALD for the deposition of the gate insulator.

Drop impact on thin liquid films using TIRM

NASA Astrophysics Data System (ADS)

Pack, Min; Ying Sun Team

2015-11-01

Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

Carbon Nanotube Thin-Film Antennas.

PubMed

Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

2016-08-17

Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

Processing approach towards the formation of thin-film Cu(In,Ga)Se2

DOEpatents

Beck, Markus E.; Noufi, Rommel

2003-01-01

A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents.

PubMed

You, Hsin-Chiang; Wang, Cheng-Jyun

2017-02-26

A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In this work, we demonstrate the utility of the TFT ZnO channel to sense various liquids, such as polar solvents (ethanol), non-polar solvents (toluene) and deionized (DI) water, which were dropped and adsorbed onto the channel. It is discussed how different dielectric constants of polar/non-polar solvents and DI water were associated with various charge transport properties, demonstrating the main detection mechanisms of the thin-film transistor.

Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents

PubMed Central

You, Hsin-Chiang; Wang, Cheng-Jyun

2017-01-01

A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In this work, we demonstrate the utility of the TFT ZnO channel to sense various liquids, such as polar solvents (ethanol), non-polar solvents (toluene) and deionized (DI) water, which were dropped and adsorbed onto the channel. It is discussed how different dielectric constants of polar/non-polar solvents and DI water were associated with various charge transport properties, demonstrating the main detection mechanisms of the thin-film transistor. PMID:28772592

Flexoelectricity in barium strontium titanate thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo

2014-10-06

Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. Themore » measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.« less

Physical Vapor Deposition of Thin Films

NASA Astrophysics Data System (ADS)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

DOEpatents

Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

1999-01-01

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Water-Based Peeling of Thin Hydrophobic Films

NASA Astrophysics Data System (ADS)

Khodaparast, Sepideh; Boulogne, François; Poulard, Christophe; Stone, Howard A.

2017-10-01

Inks of permanent markers and waterproof cosmetics create elastic thin films upon application on a surface. Such adhesive materials are deliberately designed to exhibit water-repellent behavior. Therefore, patterns made up of these inks become resistant to moisture and cannot be cleaned by water after drying. However, we show that sufficiently slow dipping of such elastic films, which are adhered to a substrate, into a bath of pure water allows for complete removal of the hydrophobic coatings. Upon dipping, the air-water interface in the bath forms a contact line on the substrate, which exerts a capillary-induced peeling force at the edge of the hydrophobic thin film. We highlight that this capillary peeling process is more effective at lower velocities of the air-liquid interface and lower viscosities. Capillary peeling not only removes such thin films from the substrate but also transfers them flawlessly onto the air-water interface.

Femtosecond laser processing of NiPd single and 5x(Ni/Pd) multilayer thin films

NASA Astrophysics Data System (ADS)

Petrović, S.; Gaković, B.; Zamfirescu, M.; Radu, C.; Peruško, D.; Radak, B.; Ristoscu, C.; Zdravković, S.; Luculescu, C. L.; Mihailescu, I. N.

2017-09-01

Modification of single and complex nickel-palladium samples by laser processing in the femtosecond time domain was studied. The samples were processed by focused Ti:Sapphire laser beam (Clark CPA-2101) with 775 nm laser wavelength, 2 kHz repetition rate, 200 fs pulse duration. The laser-induced morphological modifications have shown dependence on the applied fluences and number of laser pulses. The formed surface nanostructures on the single NiPd/Si and multilayer 5x(Ni/Pd)/Si systems are compared with individual Ni and Pd thin films. The results show an increase in surface roughness, formation of parallel periodic surface structures, appearance of hydrodynamic features and ablation of surface material. At low number of pulses (less than 10 pulses) and low pulse energies range (not over 1.7 μJ), the two types of laser-induced periodic surface structure (LIPSS) can be observed: low and high spatial frequency LIPSS (HSFL and LSFL). For all samples, the measured LSFL periods were 720 nm for the ripples created solely on thin film surfaces during the single pulse action. In the case of the multi-pulse irradiation, the periodicities of created LSFLs on the all investigated thin films have shown tendency to reduction with increasing of pulse energies.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Crystalline-silicon reliability lessons for thin-film modules

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1985-01-01

The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

Nanopore thin film enabled optical platform for drug loading and release.

PubMed

Song, Chao; Che, Xiangchen; Que, Long

2017-08-07

In this paper, a drug loading and release device fabricated using nanopore thin film and layer-by-layer (LbL) nanoassembly is reported. The nanopore thin film is a layer of anodic aluminum oxide (AAO), consisting of honeycomb-shape nanopores. Using the LbL nanoassembly process, the drug, using gentamicin sulfate (GS) as the model, can be loaded into the nanopores and the stacked layers on the nanopore thin film surface. The drug release from the device is achieved by immersing it into flowing DI water. Both the loading and release processes can be monitored optically. The effect of the nanopore size/volume on drug loading and release has also been evaluated. Further, the neuron cells have been cultured and can grow normally on the nanopore thin film, verifying its bio-compatibility. The successful fabrication of nanopore thin film device on silicon membrane render it as a potential implantable controlled drug release device.

Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol-Gel Process and H2 Gas Sensing Performance

NASA Astrophysics Data System (ADS)

Dey, Anup; Roy, Subhashis; Sarkar, Subir Kumar

2018-03-01

In this paper, an attempt is made to deposit ZnO thin films using sol-gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550 °C for 25 min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000 ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550 °C annealing temperature and operating temperature of 150 °C. Hence, the modified ZnO thin films can be applicable as H2 gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.

Molecular solution processing of metal chalcogenide thin film solar cells

NASA Astrophysics Data System (ADS)

Yang, Wenbing

The barrier to utilize solar generated electricity mainly comes from their higher cost relative to fossil fuels. However, innovations with new materials and processing techniques can potentially make cost effective photovoltaics. One such strategy is to develop solution processed photovoltaics which avoid the expensive vacuum processing required by traditional solar cells. The dissertation is mainly focused on two absorber material system for thin film solar cells: chalcopyrite CuIn(S,Se)2 (CISS) and kesterite Cu2ZnSn(S,Se) 4 organized in chronological order. Chalcopyrite CISS is a very promising material. It has been demonstrated to achieve the highest efficiency among thin film solar cells. Scaled-up industry production at present has reached the giga-watt per year level. The process however mainly relies on vacuum systems which account for a significant percentage of the manufacturing cost. In the first section of this dissertation, hydrazine based solution processed CISS has been explored. The focus of the research involves the procedures to fabricate devices from solution. The topics covered in Chapter 2 include: precursor solution synthesis with a focus on understanding the solution chemistry, CISS absorber formation from precursor, properties modification toward favorable device performance, and device structure innovation toward tandem device. For photovoltaics to have a significant impact toward meeting energy demands, the annual production capability needs to be on TW-level. On such a level, raw materials supply of rare elements (indium for CIS or tellurium for CdTe) will be the bottleneck limiting the scalability. Replacing indium with zinc and tin, earth abundant kesterite CZTS exhibits great potential to reach the goal of TW-level with no limitations on raw material availability. Chapter 3 shows pioneering work towards solution processing of CZTS film at low temperature. The solution processed devices show performances which rival vacuum

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Drop impact onto a thin film: Miscibility effect

NASA Astrophysics Data System (ADS)

Chen, Ningli; Chen, H.; Amirfazli, A.

2017-09-01

In this work a systematic experimental study was performed to understand the process of liquid drop impact onto a thin film made of a different liquid from drop. The drop and film liquids can be miscible or immiscible. Three general outcomes of deposition, crown formation without splashing, and splashing, were observed in the advancing phase of the drop impact onto a solid surface covered by either a miscible or an immiscible thin film. However, for a miscible film, a larger Weber number and film thickness are needed for the formation of a crown and splashing comparing with immiscible cases. The advancing phase of drop impact onto a thin immiscible film with a large viscosity is similar to that of drop impact onto a dry surface; for a miscible film viscous film, the behavior is far from that of a dry surface. The behavior of liquid lamella in the receding phase of drop impact onto a thin miscible film is reported for the first time. The results show that immiscibility is not a necessary condition for the existence of a receding phase. The existence of a receding phase is highly dependent on the interfacial tension between the drop and the film. The miscibility can significantly affect the receding morphology as it will cause mixing of the two liquids.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Thin Films

NASA Astrophysics Data System (ADS)

Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

2014-11-01

Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

Improvement of orthodontic friction by coating archwire with carbon nitride film

NASA Astrophysics Data System (ADS)

Wei, Songbo; Shao, Tianmin; Ding, Peng

2011-10-01

In order to reduce frictional resistance between archwire and bracket during orthodontic tooth movement, carbon nitride (CNx) thin films were deposited on the surface of archwires with ion beam assisted deposition (IBAD). The energy-dispersive X-ray spectrometer (EDS) analysis showed that the CNx film was successfully deposited on the surface of the orthodontic wires. X-ray photoelectron spectroscopy (XPS) analysis suggested that the deposited CNx film was sp 2 carbon dominated structures, and diversiform bonds (N sbnd C, N tbnd C, et al.) coexisted in the film. The friction tests indicated that the CNx film significantly reduced the wire-bracket friction both in ambient air and in artificial saliva. The sp 2C rich structure of the CNx film as well as its protection function for the archwire was responsible for the low friction of the wire-bracket sliding system.

Silver nanowire-based transparent, flexible, and conductive thin film

PubMed Central

2011-01-01

The fabrication of transparent, conductive, and uniform silver nanowire films using the scalable rod-coating technique is described in this study. Properties of the transparent conductive thin films are investigated, as well as the approaches to improve the performance of transparent silver nanowire electrodes. It is found that silver nanowires are oxidized during the coating process. Incubation in hydrogen chloride (HCl) vapor can eliminate oxidized surface, and consequently, reduce largely the resistivity of silver nanowire thin films. After HCl treatment, 175 Ω/sq and approximately 75% transmittance are achieved. The sheet resistivity drops remarkably with the rise of the film thickness or with the decrease of transparency. The thin film electrodes also demonstrated excellent flexible stability, showing < 2% resistance change after over 100 bending cycles. PMID:21711602

PZT Thin-Film Micro Probe Device with Dual Top Electrodes

NASA Astrophysics Data System (ADS)

Luo, Chuan

Lead zirconate titanate (PZT) thin-film actuators have been studied intensively for years because of their potential applications in many fields. In this dissertation, a PZT thin-film micro probe device is designed, fabricated, studied, and proven to be acceptable as an intracochlear acoustic actuator. The micro probe device takes the form of a cantilever with a PZT thin-film diaphragm at the tip of the probe. The tip portion of the probe will be implanted in cochlea later in animal tests to prove its feasibility in hearing rehabilitation. The contribution of the dissertation is three-fold. First, a dual top electrodes design, consisting of a center electrode and an outer electrode, is developed to improve actuation displacement of the PZT thin-film diaphragm. The improvement by the dual top electrodes design is studied via a finite element model. When the dimensions of the dual electrodes are optimized, the displacement of the PZT thin-film diaphragm increases about 30%. A PZT thin-film diaphragm with dual top electrodes is fabricated to prove the concept, and experimental results confirm the predictions from the finite element analyses. Moreover, the dual electrode design can accommodate presence of significant residual stresses in the PZT thin-film diaphragm by changing the phase difference between the two electrodes. Second, a PZT thin-film micro probe device is fabricated and tested. The fabrication process consists of PZT thin-film deposition and deep reactive ion etching (DRIE). The uniqueness of the fabrication process is an automatic dicing mechanism that allows a large number of probes to be released easily from the wafer. Moreover, the fabrication is very efficient, because the DRIE process will form the PZT thin-film diaphragm and the special dicing mechanism simultaneously. After the probes are fabricated, they are tested with various possible implantation depths (i.e., boundary conditions). Experimental results show that future implantation depths

Design and fabrication of self-assembled thin films

NASA Astrophysics Data System (ADS)

Topasna, Daniela M.; Topasna, Gregory A.

2015-10-01

Students experience the entire process of designing, fabricating and testing thin films during their capstone course. The films are fabricated by the ionic-self assembled monolayer (ISAM) technique, which is suited to a short class and is relatively rapid, inexpensive and environmentally friendly. The materials used are polymers, nanoparticles, and small organic molecules that, in various combinations, can create films with nanometer thickness and with specific properties. These films have various potential applications such as pH optical sensors or antibacterial coatings. This type of project offers students an opportunity to go beyond the standard lecture and labs and to experience firsthand the design and fabrication processes. They learn new techniques and procedures, as well as familiarize themselves with new instruments and optical equipment. For example, students learn how to characterize the films by using UV-Vis-NIR spectrophotometry and in the process learn how the instruments operate. This work compliments a previous exercise that we introduced where students use MATHCAD to numerically model the transmission and reflection of light from thin films.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

PubMed

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Film and membrane-model thermodynamics of free thin liquid films.

PubMed

Radke, C J

2015-07-01

In spite of over 7 decades of effort, the thermodynamics of thin free liquid films (as in emulsions and foams) lacks clarity. Following a brief review of the meaning and measurement of thin-film forces (i.e., conjoining/disjoining pressures), we offer a consistent analysis of thin-film thermodynamics. By carefully defining film reversible work, two distinct thermodynamic formalisms emerge: a film model with two zero-volume membranes each of film tension γ(f) and a membrane model with a single zero-volume membrane of membrane tension 2γ(m). In both models, detailed thermodynamic analysis gives rise to thin-film Gibbs adsorption equations that allow calculation of film and membrane tensions from measurements of disjoining-pressure isotherms. A modified Young-Laplace equation arises in the film model to calculate film-thickness profiles from the film center to the surrounding bulk meniscus. No corresponding relation exists in the membrane model. Illustrative calculations of disjoining-pressure isotherms for water are presented using square-gradient theory. We report considerable deviations from Hamaker theory for films less than about 3 nm in thickness. Such thin films are considerably more attractive than in classical Hamaker theory. Available molecular simulations reinforce this finding. Copyright © 2014 Elsevier Inc. All rights reserved.

Nanocrystallization of LiCoO2 Cathodes for Thin Film Batteries Utilizing Pulse Thermal Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2009-04-01

This factsheet describes a study whose focus is on the nanocrystallization of the LiCoO2 cathode thin films on polyimide substrates and evaluate the microstructural evolution and resistance as a function of PTP processing conditions.

Fiber-Optic Temperature Sensor Using a Thin-Film Fabry-Perot Interferometer

NASA Technical Reports Server (NTRS)

Beheim, Glenn

1997-01-01

A fiber-optic temperature sensor was developed that is rugged, compact, stable, and can be inexpensively fabricated. This thin-film interferometric temperature sensor was shown to be capable of providing a +/- 2 C accuracy over the range of -55 to 275 C, throughout a 5000 hr operating life. A temperature-sensitive thin-film Fabry-Perot interferometer can be deposited directly onto the end of a multimode optical fiber. This batch-fabricatable sensor can be manufactured at a much lower cost than can a presently available sensor, which requires the mechanical attachment of a Fabry-Perot interferometer to a fiber. The principal disadvantage of the thin-film sensor is its inherent instability, due to the low processing temperatures that must be used to prevent degradation of the optical fiber's buffer coating. The design of the stable thin-film temperature sensor considered the potential sources of both short and long term drifts. The temperature- sensitive Fabry-Perot interferometer was a silicon film with a thickness of approx. 2 microns. A laser-annealing process was developed which crystallized the silicon film without damaging the optical fiber. The silicon film was encapsulated with a thin layer of Si3N4 over coated with aluminum. Crystallization of the silicon and its encapsulation with a highly stable, impermeable thin-film structure were essential steps in producing a sensor with the required long-term stability.

Substrate spacing and thin-film yield in chemical bath deposition of semiconductor thin films

NASA Astrophysics Data System (ADS)

Arias-Carbajal Reádigos, A.; García, V. M.; Gomezdaza, O.; Campos, J.; Nair, M. T. S.; Nair, P. K.

2000-11-01

Thin-film yield in the chemical bath deposition technique is studied as a function of separation between substrates in batch production. Based on a mathematical model, it is proposed and experimentally verified in the case of CdS thin films that the film thickness reaches an asymptotic maximum with increase in substrate separation. It is shown that at a separation less than 1 mm between substrates the yield, i.e. percentage in moles of a soluble cadmium salt deposited as a thin film of CdS, can exceed 50%. This behaviour is explained on the basis of the existence of a critical layer of solution near the substrate, within which the relevant ionic species have a higher probability of interacting with the thin-film layer than of contributing to precipitate formation. The critical layer depends on the solution composition and the temperature of the bath as well as the duration of deposition. An effective value for the critical layer thickness has been defined as half the substrate separation at which 90% of the maximum film thickness for the particular bath composition, bath temperature and duration of deposition is obtained. In the case of CdS thin films studied as an example, the critical layer is found to extend from 0.5 to 2.5 mm from the substrate surface, depending on the deposition conditions.

Liquid crystals for organic thin-film transistors

NASA Astrophysics Data System (ADS)

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

2015-04-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

Photo-thermal processing of semiconductor fibers and thin films

NASA Astrophysics Data System (ADS)

Gupta, Nishant

Furnace processing and rapid thermal processing (RTP) have been an integral part of several processing steps in semiconductor manufacturing. The performance of RTP techniques can be improved many times by exploiting quantum photo-effects of UV and vacuum ultraviolet (VUV) photons in thermal processing and this technique is known as rapid photo-thermal processing (RPP). As compared to furnace processing and RTP, RPP provides higher diffusion coefficient, lower stress and lower microscopic defects. In this work, a custom designed automated photo assisted processing system was built from individual parts and an incoherent light source. This photo-assisted processing system is used to anneal silica clad silicon fibers and deposit thin-films. To the best of our knowledge, incoherent light source based rapid photo-thermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination, Raman spectroscopy and electrical measurements showed a considerable enhancement of structural and crystalline properties of RPP treated silicon fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers. To explore further applications of RPP, thin-films of Calcium Copper Titanate (CaCu3Ti4O12) or CCTO and Copper (I) Oxide (Cu2O) were also deposited using photo-assisted metal-organic chemical vapor deposition (MOCVD) on Si/SiO2 and n-Si substrate respectively. CCTO is one of the most researched giant dielectric constant materials in recent years. The given photo-assisted MOCVD approach provided polycrystalline CCTO growth on a SiO2 surface with grain sizes as large as 410 nm. Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erçarıkcı, Elif; Dağcı, Kader; Topçu, Ezgi

2014-07-01

Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemicalmore » approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene.« less

Buried anode lithium thin film battery and process for forming the same

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

2004-10-19

A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

A Soluble Dynamic Complex Strategy for the Solution-Processed Fabrication of Organic Thin-Film Transistors of a Boron-Containing Polycyclic Aromatic Hydrocarbon.

PubMed

Matsuo, Kyohei; Saito, Shohei; Yamaguchi, Shigehiro

2016-09-19

The solution-processed fabrication of thin films of organic semiconductors enables the production of cost-effective, large-area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B-N coordination bond can be used for the solution-processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron-containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π-stacks. Spin-coating solutions of the thus formed Lewis acid-base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron-containing PAH upon thermal annealing. Organic thin-film transistors prepared by this solution process displayed typical p-type characteristics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin-film metal hydrides.

PubMed

Remhof, Arndt; Borgschulte, Andreas

2008-12-01

The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

PubMed

Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik

2018-09-01

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

NASA Astrophysics Data System (ADS)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Preventing Thin Film Dewetting via Graphene Capping.

PubMed

Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

2017-09-01

A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface diffusion in homoepitaxial SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Woo, Chang-Su; Chu, Kanghyun; Song, Jong-Hyun; Yang, Chan-Ho; Charm Lab Team; Nano Spintronics Lab Collaboration

The development of growth techniques such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) has facilitated growths of complex oxide thin films at the atomic level .... Systematic studies on surface diffusion process of adatoms using theoretical and experimental methods allow us to understand growth mechanism enabling atomically flat thin film surface. In this presentation, we introduce the synthesis of homoepitaxial SrTiO3 thin films using a PLD equipped with reflection of high energy electron diffraction (RHEED). We determine the surface diffusion time as a function of growth temperature and extract the activation energy of diffusion on the surface by in-situ monitoring the RHEED intensity recovery during the film deposition. From the extracted experimental results, we discuss the microscopic mechanism of the diffusion process

Synthesis of non-hydrazine solution processed Cu2(ZnSn)S4 thin films for solar cells applications

NASA Astrophysics Data System (ADS)

Gupta, Indu; Gupta, Preeti; Mohanty, Bhaskar Chandra

2017-05-01

Solution processing provides a versatile and inexpensive means to prepare Cu2ZnSnS4 (CZTS) thin films for photovoltaic applications. Differently with the reported growth of CZTS films from hydrazine based toxic solutions, we demonstrate a simple non-toxic ethanol based solution approach to synthesize the films. Using the chemical bath deposition (CBD) method, the CZTS thin films were grown from metal salts (copper chloride, zinc chloride, and tin chloride) in ethanol and monoethanol amine (MEA) and thioacetamide in ethanol as sulfur source in a single dip followed by sulfurization. The structure, composition, morphology and optical properties of the CZTS film were studied by X-ray diffraction, scanning electron microscopy and UV-vis spectroscopy. The results revealed that a post-deposition sulfurization is necessary to the phase formation and among all, sulfurization at 450°C for 60 min yielded phase pure CZTS films having kesterite structure, relatively compact morphology and an optical band gap of ˜1.52 eV indicating its suitability for solar cell applications. The results clearly validate the CBD method as a potential scalable route of preparation of CZTS thin films.

Temperature Behavior of Thin Film Varactor

DTIC Science & Technology

2012-01-01

Temperature Behavior of Thin Film Varactor By Richard X. Fu ARL-TR-5905 January 2012...Thin Film Varactor Richard X. Fu Sensors and Electron Devices Directorate, ARL...DD-MM-YYYY) January 2012 2. REPORT TYPE Final 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Temperature Behavior of Thin Film Varactor 5a

Self-Limited Growth in Pentacene Thin Films

PubMed Central

2017-01-01

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

Self-Limited Growth in Pentacene Thin Films.

PubMed

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

A proposal for epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

Metallic Thin-Film Bonding and Alloy Generation

NASA Technical Reports Server (NTRS)

Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

2016-01-01

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

High-coercivity FePt nanoparticle assemblies embedded in silica thin films.

PubMed

Yan, Q; Purkayastha, A; Singh, A P; Li, H; Li, A; Ramanujan, R V; Ramanath, G

2009-01-14

The ability to process assemblies using thin film techniques in a scalable fashion would be a key to transmuting the assemblies into manufacturable devices. Here, we embed FePt nanoparticle assemblies into a silica thin film by sol-gel processing. Annealing the thin film composite at 650 degrees C transforms the chemically disordered fcc FePt phase into the fct phase, yielding magnetic coercivity values H(c)>630 mT. The positional order of the particles is retained due to the protection offered by the silica host. Such films with assemblies of high-coercivity magnetic particles are attractive for realizing new types of ultra-high-density data storage devices and magneto-composites.

The promise of solution-processed Fe 2GeS 4 thin films in iron chalcogenide photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Mimi; Berg, Dominik M.; Hwang, Po-Yu

The olivine Fe 2GeS 4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe 2GeS 4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe 2GeS 4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe 2GeS 4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe 2GeS 4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe 2GeS 4 thin films as the sole absorber in a solution-based solarmore » cell, open-circuit voltages of 361 mV are observed, while the use of the Fe 2GeS 4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe 2GeS 4.« less

The promise of solution-processed Fe 2GeS 4 thin films in iron chalcogenide photovoltaics

DOE PAGES

Liu, Mimi; Berg, Dominik M.; Hwang, Po-Yu; ...

2018-02-06

The olivine Fe 2GeS 4, featuring non-toxic elements, cost-effective synthesis, and suitable optoelectronic properties, recently emerged as a promising light-absorbing candidate. Fe 2GeS 4 precursor powders obtained via a simple solution-based process were converted to highly crystalline Fe 2GeS 4 powders upon a thermal treatment in controlled atmosphere. Thin films fabricated by dip coating in the Fe 2GeS 4 precursor dispersion and subjected to the same thermal treatment render high-purity Fe 2GeS 4 thin films with a band gap of 1.4 eV, measured by room-temperature photoluminescence. Using Fe 2GeS 4 thin films as the sole absorber in a solution-based solarmore » cell, open-circuit voltages of 361 mV are observed, while the use of the Fe 2GeS 4 films as counter electrodes in dye-sensitized solar cell constructs enhances the overall power conversion efficiency of the cell by a factor of five. Finally, this is the first report of a photovoltaic device based onFe 2GeS 4.« less

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Thin film temperature sensor

NASA Technical Reports Server (NTRS)

Grant, H. P.; Przybyszewski, J. S.

1980-01-01

Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

Thin Film Approaches to the SRF Cavity Problem Fabrication and Characterization of Superconducting Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beringer, Douglas

Superconducting Radio Frequency (SRF) cavities are responsible for the acceleration of charged particles to relativistic velocities in most modern linear accelerators, such as those employed at high-energy research facilities like Thomas Jefferson National Laboratory’s CEBAF and the LHC at CERN. Recognizing SRF as primarily a surface phenomenon enables the possibility of applying thin films to the interior surface of SRF cavities, opening a formidable tool chest of opportunities by combining and designing materials that offer greater performance benefit. Thus, while improvements in radio frequency cavity design and refinements in cavity processing techniques have improved accelerator performance and efficiency – 1.5more » GHz bulk niobium SRF cavities have achieved accelerating gradients in excess of 35 MV/m – there exist fundamental material bounds in bulk superconductors limiting the maximally sustained accelerating field gradient (≈ 45 MV/m for Nb) where inevitable thermodynamic breakdown occurs. With state of the art Nb based cavity design fast approaching these theoretical limits, novel material innovations must be sought in order to realize next generation SRF cavities. One proposed method to improve SRF performance is to utilize thin film superconducting-insulating-superconducting (SIS) multilayer structures to effectively magnetically screen a bulk superconducting layer such that it can operate at higher field gradients before suffering critically detrimental SRF losses. This dissertation focuses on the production and characterization of thin film superconductors for such SIS layers for radio frequency applications. Correlated studies on structure, surface morphology and superconducting properties of epitaxial Nb and MgB2 thin films are presented.« less

Developing Multilayer Thin Film Strain Sensors With High Thermal Stability

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.; Gonzalez, Jose M., III

2006-01-01

A multilayer thin film strain sensor for large temperature range use is under development using a reactively-sputtered process. The sensor is capable of being fabricated in fine line widths utilizing the sacrificial-layer lift-off process that is used for micro-fabricated noble-metal sensors. Tantalum nitride films were optimized using reactive sputtering with an unbalanced magnetron source. A first approximation model of multilayer resistance and temperature coefficient of resistance was used to set the film thicknesses in the multilayer film sensor. Two multifunctional sensors were fabricated using multilayered films of tantalum nitride and palladium chromium, and tested for low temperature resistivity, TCR and strain response. The low temperature coefficient of resistance of the films will result in improved stability in thin film sensors for low to high temperature use.

Growth, characterization and post-processing of inorganic and hybrid organic-inorganic thin films deposited using atomic and molecular layer deposition techniques

NASA Astrophysics Data System (ADS)

Abdulagatov, Aziz Ilmutdinovich

Atomic layer deposition (ALD) and molecular layer deposition (MLD) are advanced thin film coating techniques developed for deposition of inorganic and hybrid organic-inorganic films respectively. Decreasing device dimensions and increasing aspect ratios in semiconductor processing has motivated developments in ALD. The beginning of this thesis will cover study of new ALD chemistry for high dielectric constant Y 2O3. In addition, the feasibility of conducting low temperature ALD of TiN and TiAlN is explored using highly reactive hydrazine as a new nitrogen source. Developments of these ALD processes are important for the electronics industry. As the search for new materials with more advanced properties continues, attention has shifted toward exploring the synthesis of hierarchically nanostructured thin films. Such complex architectures can provide novel functions important to the development of state of the art devices for the electronics industry, catalysis, energy conversion and memory storage as a few examples. Therefore, the main focus of this thesis is on the growth, characterization, and post-processing of ALD and MLD films for fabrication of novel composite (nanostructured) thin films. Novel composite materials are created by annealing amorphous ALD oxide alloys in air and by heat treatment of hybrid organic-inorganic MLD films in inert atmosphere (pyrolysis). The synthesis of porous TiO2 or Al2O3 supported V2O5 for enhanced surface area catalysis was achieved by the annealing of inorganic TiVxOy and AlV xOy ALD films in air. The interplay between phase separation, surface energy difference, crystallization, and melting temperature of individual oxides were studied for their control of film morphology. In other work, a class of novel metal oxide-graphitic carbon composite thin films was produced by pyrolysis of MLD hybrid organic-inorganic films. For example, annealing in argon of titania based hybrid films enabled fabrication of thin films of intimately

Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

PubMed

Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

2015-04-08

Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

Analysis of Hard Thin Film Coating

NASA Technical Reports Server (NTRS)

Shen, Dashen

1998-01-01

Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Analysis of Hard Thin Film Coating

NASA Technical Reports Server (NTRS)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Thin films of a ferroelectric phenazine/chloranilic acid organic cocrystal

NASA Astrophysics Data System (ADS)

Thompson, Nicholas J.; Jandl, Adam C.; Spalenka, Josef W.; Evans, Paul G.

2011-07-01

Phenazine-chloranilic acid cocrystal thin films can be formed by vacuum evaporation of the component molecules onto cooled substrates. Fluxes of phenazine and chloranilic acid were provided from separate sublimation sources, from which the cocrystalline phase can be formed under a wide range of impingement rates of the component molecules. Substrates consisted of Au or Ni thin films on Si wafers, cooled to 100-140 K during deposition. X-ray diffraction and scanning electron microscopy show that this process yields polycrystalline thin films of the cocrystal with voids between crystalline grains. The relative intensities of X-ray reflections differ from reported intensities of polycrystalline powders, suggesting that the films have an anisotropic distribution of crystallographic orientations. The cocrystalline thin films have an effective dielectric constant of 13 at room temperature, increasing at lower temperatures and exhibiting a broad maximum near 200 K. The means to grow thin films of organic ferroelectric materials will allow the integration of new functionalities into organic electronic device structures, including capacitors and field-effect transistors.

An optimized one-step wet etching process of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical system applications

NASA Astrophysics Data System (ADS)

Che, L.; Halvorsen, E.; Chen, X.

2011-10-01

The existence of insoluble residues as intermediate products produced during the wet etching process is the main quality-reducing and structure-patterning issue for lead zirconate titanate (PZT) thin films. A one-step wet etching process using the solutions of buffered HF (BHF) and HNO3 acid was developed for patterning PZT thin films for microelectomechanical system (MEMS) applications. PZT thin films with 1 µm thickness were prepared on the Pt/Ti/SiO2/Si substrate by the sol-gel process for compatibility with Si micromachining. Various compositions of the etchant were investigated and the patterns were examined to optimize the etching process. The optimal result is demonstrated by a high etch rate (3.3 µm min-1) and low undercutting (1.1: 1). The patterned PZT thin film exhibits a remnant polarization of 24 µC cm-2, a coercive field of 53 kV cm-1, a leakage current density of 4.7 × 10-8 A cm-2 at 320 kV cm-1 and a dielectric constant of 1100 at 1 KHz.

TOPICAL REVIEW: Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

NASA Astrophysics Data System (ADS)

Stoldt, Conrad R.; Bright, Victor M.

2006-05-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film.

Nanocrystal thin film fabrication methods and apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Thin-film rechargeable lithium batteries

NASA Astrophysics Data System (ADS)

Dudney, N. J.; Bates, J. B.; Lubben, D.

1994-11-01

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxynitride electrolyte, Li metal anode, and Li(1-x)Mn2O4 as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100 C or by enhancing the lithium ion transport rate in the cathode material.

Thin film-coated polymer webs

DOEpatents

Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

1992-02-04

The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

Thin film solar cell workshop

NASA Technical Reports Server (NTRS)

Armstrong, Joe; Jeffrey, Frank

1993-01-01

A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates.

PubMed

Park, Kwi-Il; Son, Jung Hwan; Hwang, Geon-Tae; Jeong, Chang Kyu; Ryu, Jungho; Koo, Min; Choi, Insung; Lee, Seung Hyun; Byun, Myunghwan; Wang, Zhong Lin; Lee, Keon Jae

2014-04-23

A highly-efficient, flexible piezoelectric PZT thin film nanogenerator is demonstrated using a laser lift-off (LLO) process. The PZT thin film nanogenerator harvests the highest output performance of ∼200 V and ∼150 μA·cm(-2) from regular bending motions. Furthermore, power sources generated from a PZT thin film nanogenerator, driven by slight human finger bending motions, successfully operate over 100 LEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sol-gel preparation of silica and titania thin films

NASA Astrophysics Data System (ADS)

Thoř, Tomáš; Václavík, Jan

2016-11-01

Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

Thin film processing of photorefractive BaTiO3

NASA Technical Reports Server (NTRS)

Schuster, Paul R.

1993-01-01

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition

Infrared radiation of thin plastic films.

NASA Technical Reports Server (NTRS)

Tien, C. L.; Chan, C. K.; Cunnington, G. R.

1972-01-01

A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

Liquid crystals for organic thin-film transistors

PubMed Central

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-ichi

2015-01-01

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V−1 s−1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics. PMID:25857435

Liquid crystals for organic thin-film transistors.

PubMed

Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-ichi

2015-04-10

Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm(2) V(-1) s(-1)) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

Aerosol Combustion Synthesis of Nanopowders and Processing to Functional Thin Films

NASA Astrophysics Data System (ADS)

Yi, Eongyu

counterpart. Following series of studies explore the use of flame made NPs in processing Li+ conducting membranes. Systematic doping studies were conducted in the LiTi2(PO4)3 system to modify the lattice constant, conduction channel width, and sintering behavior by introducing Al3+ and Si4+ dopants. Excess Li2O content was also adjusted to observe its effect on final microstructures and phase compositions. Improved densification rates were found in Li1.7 Al0.3Ti1.7Si0.4P2.6O 12 composition and thin films (52+/-1 microm) with conductivities of 0.3-0.5 mS cm-1 were achieved. Li6.25M0.25La3Zr2O12 (M = Al3+, Ga3+) thin films (25-28 microm) with conductivities of 0.2-1.3 mS cm-1 were also successfully processed using flame made NPs, overcoming processing challenges extant, resulting in significantly reduced energy input required for densification. Heating schedules, sintering atmospheres, and types of substrates were controlled to observe their effect on the sintering behavior. Furthermore, green film thicknesses were found to be a crucial variable determining the final microstructures and phase compositions due to the varying Li2O loss rates with change in thicknesses (surface/volume ratios). Using fully decomposed NP mixtures (Li2CO3/off-stoichiometric La2Zr2O 7), as obtained by LF-FSP, provides an ideal approach to use high surface/reaction energy and liquid phase sintering to drive densification.

Magnetoelastic sensor for characterizing properties of thin-film/coatings

NASA Technical Reports Server (NTRS)

Bachas, Leonidas G. (Inventor); Barrett, Gary (Inventor); Grimes, Craig A. (Inventor); Kouzoudis, Dimitris (Inventor); Schmidt, Stefan (Inventor)

2004-01-01

An apparatus for determining elasticity characteristics of a thin-film layer. The apparatus comprises a sensor element having a base magnetostrictive element at least one surface of which is at least partially coated with the thin-film layer. The thin-film layer may be of a variety of materials (having a synthetic and/or bio-component) in a state or form capable of being deposited, manually or otherwise, on the base element surface, such as by way of eye-dropper, melting, dripping, brushing, sputtering, spraying, etching, evaporation, dip-coating, laminating, etc. Among suitable thin-film layers for the sensor element of the invention are fluent bio-substances, thin-film deposits used in manufacturing processes, polymeric coatings, paint, an adhesive, and so on. A receiver, preferably remotely located, is used to measure a plurality of values for magneto-elastic emission intensity of the sensor element in either characterization: (a) the measure of the plurality of values is used to identify a magneto-elastic resonant frequency value for the sensor element; and (b) the measure of the plurality of successive values is done at a preselected magneto-elastic frequency.

Thin-Film Transformation of NH4 PbI3 to CH3 NH3 PbI3 Perovskite: A Methylamine-Induced Conversion-Healing Process.

PubMed

Zong, Yingxia; Zhou, Yuanyuan; Ju, Minggang; Garces, Hector F; Krause, Amanda R; Ji, Fuxiang; Cui, Guanglei; Zeng, Xiao Cheng; Padture, Nitin P; Pang, Shuping

2016-11-14

Methylamine-induced thin-film transformation at room-temperature is discovered, where a porous, rough, polycrystalline NH 4 PbI 3 non-perovskite thin film converts stepwise into a dense, ultrasmooth, textured CH 3 NH 3 PbI 3 perovskite thin film. Owing to the beneficial phase/structural development of the thin film, its photovoltaic properties undergo dramatic enhancement during this NH 4 PbI 3 -to-CH 3 NH 3 PbI 3 transformation process. The chemical origins of this transformation are studied at various length scales. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

1995-01-01

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

Role of solution structure in self-assembly of conjugated block copolymer thin films

DOE PAGES

Brady, Michael A.; Ku, Sung -Yu; Perez, Louis A.; ...

2016-10-24

Conjugated block copolymers provide a pathway to achieve thermally stable nanostructured thin films for organic solar cells. We characterized the structural evolution of poly(3-hexylthiophene)- block-poly(diketopyrrolopyrrole–terthiophene) (P3HT- b-DPPT-T) from solution to nanostructured thin films. Aggregation of the DPPT-T block of P3HT- b-DPPT-T was found in solution by small-angle X-ray scattering with the P3HT block remaining well-solvated. The nanostructure in thin films was determined using a combination of wide and small-angle X-ray scattering techniques as a function of processing conditions. The structure in solution controlled the initial nanostructure in spin-cast thin films, allowing subsequent thermal annealing processes to further improve the ordering.more » In contrast to the results for thin films, nanostructural ordering was not observed in the bulk samples by small-angle X-ray scattering. Finally, these results suggest the importance of controlling solvent induced aggregation in forming nanostructured thin films of conjugated block copolymers.« less

Role of solution structure in self-assembly of conjugated block copolymer thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brady, Michael A.; Ku, Sung -Yu; Perez, Louis A.

Conjugated block copolymers provide a pathway to achieve thermally stable nanostructured thin films for organic solar cells. We characterized the structural evolution of poly(3-hexylthiophene)- block-poly(diketopyrrolopyrrole–terthiophene) (P3HT- b-DPPT-T) from solution to nanostructured thin films. Aggregation of the DPPT-T block of P3HT- b-DPPT-T was found in solution by small-angle X-ray scattering with the P3HT block remaining well-solvated. The nanostructure in thin films was determined using a combination of wide and small-angle X-ray scattering techniques as a function of processing conditions. The structure in solution controlled the initial nanostructure in spin-cast thin films, allowing subsequent thermal annealing processes to further improve the ordering.more » In contrast to the results for thin films, nanostructural ordering was not observed in the bulk samples by small-angle X-ray scattering. Finally, these results suggest the importance of controlling solvent induced aggregation in forming nanostructured thin films of conjugated block copolymers.« less

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

PubMed Central

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-01-01

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology. PMID:27470637

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films.

PubMed

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-07-29

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK(2) has been readily obtained for Tos thin films following this methodology.

Structural and morphological study on ZnO:Al thin films grown using DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Astuti, B.; Sugianto; Mahmudah, S. N.; Zannah, R.; Putra, N. M. D.; Marwoto, P.; Aryanto, D.; Wibowo, E.

2018-03-01

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure.

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Nanocrystalline mesoporous SMO thin films prepared by sol gel process for MEMS-based hydrogen sensor

NASA Astrophysics Data System (ADS)

Gong, Jianwei; Fei, Weifeng; Seal, Sudipta; Chen, Quanfang

2004-01-01

MEMS based SnO2 gas sensor with sol gel synthesized mesoporous nanocrystalline (<10 nm) semiconductor thin (100~150 nm) film has been recently developed. The SnO2 nano film is fabricated with the combination of polymeric sol gel chemistry with block copolymers used for structure directing agents. The novel hydrogen sensor has a fast response time (1s) and quick recovery time (3s), as well as good sensitivity (about 90%), comparing to other hydrogen sensors developed. The improved capabilities are credited to the large surface to volume ratio of gas sensing thin film with nano sized porous surface topology, which can greatly increase the sensitivity even at relatively low working temperature. The gas sensing film is deposited onto a thin dielectric membrane of low thermal conductivity, which provides good thermal isolation between substrate and the gas-sensitive heated area on the membrane. In this way the power consumption can be kept very low. Since the fabrication process is completely compatible with IC industry, it makes mass production possible and greatly reduces the cost. The working temperature of the new sensor can be reduced as low as 100°C. The low working temperature posse advantages such as lower power consumption, lower thermal induced signal shift as well as safe detection in certain environments where temperature is strictly limited.

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

NASA Astrophysics Data System (ADS)

Suda, Ryutaro; Yagi, Mamiko; Kojima, Akira; Mentek, Romain; Mori, Nobuya; Shirakashi, Jun-ichi; Koshida, Nobuyoshi

2015-04-01

To enhance the usefulness of ballistic hot electron injection into solutions for depositing thin group-IV films, a dripping scheme is proposed. A very small amount of SiCl4 or GeCl4 solution was dripped onto the surface of a nanocrystalline Si (nc-Si) electron emitter, and then the emitter is driven without using any counter electrodes. It is shown that thin Si and Ge films are deposited onto the emitting surface. Spectroscopic surface and compositional analyses showed no extrinsic carbon contaminations in deposited thin films, in contrast to the results of a previous study using the dipping scheme. The availability of this technique for depositing thin SiGe films is also demonstrated using a mixture SiCl4+GeCl4 solution. Ballistic hot electrons injected into solutions with appropriate kinetic energies promote preferential reduction of target ions with no by-products leading to nuclei formation for the thin film growth. Specific advantageous features of this clean, room-temperature, and power-effective process is discussed in comparison with the conventional dry and wet processes.

Pathways to Mesoporous Resin/Carbon Thin Films with Alternating Gyroid Morphology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qi; Matsuoka, Fumiaki; Suh, Hyo Seon

Three-dimensional (3D) mesoporous thin films with sub-100 nm periodic lattices are of increasing interest as templates for a number of nanotechnology applications, yet are hard to achieve with conventional top-down fabrication methods. Block copolymer self-assembly derived mesoscale structures provide a toolbox for such 3D template formation. In this work, single (alternating) gyroidal and double gyroidal mesoporous thin-film structures are achieved via solvent vapor annealing assisted co-assembly of poly(isoprene-block-styrene-block-ethylene oxide) (PI-b-PS-b-PEO, ISO) and resorcinol/phenol formaldehyde resols. In particular, the alternating gyroid thin-film morphology is highly desirable for potential template backfilling processes as a result of the large pore volume fraction. Inmore » situ grazing-incidence small-angle X-ray scattering during solvent annealing is employed as a tool to elucidate and navigate the pathway complexity of the structure formation processes. The resulting network structures are resistant to high temperatures provided an inert atmosphere. The thin films have tunable hydrophilicity from pyrolysis at different temperatures, while pore sizes can be tailored by varying ISO molar mass. A transfer technique between substrates is demonstrated for alternating gyroidal mesoporous thin films, circumventing the need to re-optimize film formation protocols for different substrates. Increased conductivity after pyrolysis at high temperatures demonstrates that these gyroidal mesoporous resin/carbon thin films have potential as functional 3D templates for a number of nanomaterials applications.« less

Annealing of Solar Cells and Other Thin Film Devices

NASA Technical Reports Server (NTRS)

Escobar, Hector; Kuhlman, Franz; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

2001-01-01

Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

1995-12-05

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

Recent progress of obliquely deposited thin films for industrial applications

NASA Astrophysics Data System (ADS)

Suzuki, Motofumi; Itoh, Tadayoshi; Taga, Yasunori

1999-06-01

More than 10 years ago, birefringent films of metal oxides were formed by oblique vapor deposition and investigated with a view of their application to optical retardation plates. The retardation function of the films was explained in terms of the birefringence caused by the characteristic anisotropic nanostructure inside the films. These films are now classified in the genre of the so-called sculptured thin films. However, the birefringent films thus prepared are not yet industrialized even now due to the crucial lack of the durability and the yield of products. In this review paper, we describe the present status of application process of the retardation films to the information systems such as compact disc and digital versatile disc devices with a special emphasis on the uniformity of retardation properties in a large area and the stability of the optical properties of the obliquely deposited thin films. Finally, further challenges for wide application of the obliquely deposited thin films are also discussed.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Single Source Precursors for Thin Film Solar Cells

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Hollingsworth, Jennifer A.; Harris, Jerry D.; Cowen, Jonathan; Buhro, William E.; Hepp, Aloysius F.

2002-01-01

The development of thin film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. At NASA GRC we have focused on the development of new single source precursors (SSP) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD (chemical vapor deposition) process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV (photovoltaic) devices.

Morphological Transition in Diamond Thin-Films Induced by Boron in a Microwave Plasma Deposition Process.

PubMed

Baker, Paul A; Goodloe, David R; Vohra, Yogesh K

2017-11-14

The purpose of this study is to understand the basic mechanisms responsible for the synthesis of nanostructured diamond films in a microwave plasma chemical vapor deposition (MPCVD) process and to identify plasma chemistry suitable for controlling the morphology and electrical properties of deposited films. The nanostructured diamond films were synthesized by MPCVD on Ti-6Al-4V alloy substrates using H₂/CH₄/N₂ precursor gases and the plasma chemistry was monitored by the optical emission spectroscopy (OES). The synthesized thin-films were characterized by x -ray diffraction and scanning electron microscopy. The addition of B₂H₆ to the feedgas during MPCVD of diamond thin-films changes the crystal grain size from nanometer to micron scale. Nanostructured diamond films grown with H₂/CH₄/N₂ gases demonstrate a broad (111) Bragg x -ray diffraction peak (Full-Width at Half-Maximum (FWHM) = 0.93° 2θ), indicating a small grain size, whereas scans show a definite sharpening of the diamond (111) peak (FWHM = 0.30° 2θ) with the addition of boron. OES showed a decrease in CN (carbon-nitrogen) radical in the plasma with B₂H₆ addition to the gas mixture. Our study indicates that CN radical plays a critical role in the synthesis of nanostructured diamond films and suppression of CN radical by boron-addition in the plasma causes a morphological transition to microcrystalline diamond.

Polythiophene thin films by surface-initiated polymerization: Mechanistic and structural studies

DOE PAGES

Youm, Sang Gil; Hwang, Euiyong; Chavez, Carlos A.; ...

2016-06-15

The ability to control nanoscale morphology and molecular organization in organic semiconducting polymer thin films is an important prerequisite for enhancing the efficiency of organic thin-film devices including organic light-emitting and photovoltaic devices. The current “top-down” paradigm for making such devices is based on utilizing solution-based processing (e.g., spin-casting) of soluble semiconducting polymers. This approach typically provides only modest control over nanoscale molecular organization and polymer chain alignment. A promising alternative to using solutions of presynthesized semiconducting polymers pursues instead a “bottom-up” approach to prepare surface-grafted semiconducting polymer thin films by surface-initiated polymerization of small-molecule monomers. Herein, we describe themore » development of an efficient method to prepare polythiophene thin films utilizing surface-initiated Kumada catalyst transfer polymerization. In this study, we provided evidence that the surface-initiated polymerization occurs by the highly robust controlled (quasi-“living”) chain-growth mechanism. Further optimization of this method enabled reliable preparation of polythiophene thin films with thickness up to 100 nm. Extensive structural studies of the resulting thin films using X-ray and neutron scattering methods as well as ultraviolet photoemission spectroscopy revealed detailed information on molecular organization and the bulk morphology of the films, and enabled further optimization of the polymerization protocol. One of the remarkable findings was that surface-initiated polymerization delivers polymer thin films showing complex molecular organization, where polythiophene chains assemble into lateral crystalline domains of about 3.2 nm size, with individual polymer chains folded to form in-plane aligned and densely packed oligomeric segments (7-8 thiophene units per each segment) within each domain. Achieving such a complex mesoscale

Solution-processed flexible fluorine-doped indium zinc oxide thin-film transistors fabricated on plastic film at low temperature.

PubMed

Seo, Jin-Suk; Jeon, Jun-Hyuck; Hwang, Young Hwan; Park, Hyungjin; Ryu, Minki; Park, Sang-Hee Ko; Bae, Byeong-Soo

2013-01-01

Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1 cm(2)/V·s and stable characteristics under the various gate bias and temperature stresses.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov Websites

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the National Laboratory developed low-cost transparent encapsulation schemes for CIGS cells that reduced power

Development of Thin Film Thermocouples on Ceramic Materials for Advanced Propulsion System Applications

NASA Technical Reports Server (NTRS)

Holanda, R.

1992-01-01

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 c. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperature of 1500 C depending on the stability of the particular ceramic substrate.

Development of thin film thermocouples on ceramic materials for advanced propulsion system applications

NASA Technical Reports Server (NTRS)

Holanda, Raymond

1993-01-01

Thin film thermocouples were developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hr or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Ion energy/momentum effects during ion assisted growth of niobium nitride films

NASA Astrophysics Data System (ADS)

Klingenberg, Melissa L.

The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and

Thin Film Deposition Using Energetic Ions

PubMed Central

Manova, Darina; Gerlach, Jürgen W.; Mändl, Stephan

2010-01-01

One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes. PMID:28883323

Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

2018-06-01

The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

Preparation of MgF2-SiO2 thin films with a low refractive index by a solgel process.

PubMed

Ishizawa, Hitoshi; Niisaka, Shunsuke; Murata, Tsuyoshi; Tanaka, Akira

2008-05-01

Porous MgF(2)-SiO(2) thin films consisting of MgF(2) particles connected by an amorphous SiO(2) binder are prepared by a solgel process. The films have a low refractive index of 1.26, sufficient strength to withstand wiping by a cloth, and a high environmental resistance. The refractive index of the film can be controlled by changing the processing conditions. Films can be uniformly formed on curved substrates and at relatively low temperatures, such as 100 degrees C. The low refractive index of the film, which cannot be achieved by conventional dry processes, is effective in improving the performance of antireflective coatings.

Multifunctional thin film surface

DOEpatents

Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

2015-10-13

A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

Thin film tritium dosimetry

DOEpatents

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

Effects of Convection During the Photodeposition of Polydiacetylene Thin Films

NASA Technical Reports Server (NTRS)

Frazier, D. O.; Hung, R. J.; Paley, M. S.; Long, Y. T.

1997-01-01

In this work, we describe a preliminary investigation of buoyancy-driven heat transfer during the growth of thin films from solution following exposure to ultraviolet (UV) light. Irradiation of the growth cell occurs at various directions relative to gravitational acceleration. Through numerical computations, the steady-state flow and temperature profiles are simulated during the course of light exposure. Light-induced polymerization accompanies a heat transfer process through a fairly complicated recirculating flow pattern. A scaling analysis shows that buoyancy-driven velocities only reduce by a factor of 10 for gravity levels as low as 10(exp -2)g(sub 0). Paley et al. observe what appears to be gravitationally sensitive particle development and inclusion in thin films using a photodeposition process. From this study it is clear that production of homogeneous thin films would have to occur in the environment of a complicated flow pattern of recirculation with a nonuniform temperature distribution. Indeed, even when irradiation occurs from the top of the cell, the most stable stratified cell orientation, defects remain in our films due to the persistence of buoyancy-driven convection. To achieve homogeneity, minimal scattering centers, and possible molecular order, photodeposition of polymer films by UV light exposure must proceed in a reduced-convection environment. Fluid mechanics simulations are useful for establishing gravitational sensitivity to this recently discovered process (patent # 5,451,433) for preparing thin films having quite promising nonlinear optical characteristics.

Effects of Convection during the Photodeposition of Polydiacetylene Thin Films

NASA Technical Reports Server (NTRS)

Frazier, D. O.; Hung, R. J.; Paley, M. S.; Long, Y. T.

1997-01-01

In this work, we describe a preliminary investigation of buoyancy-driven heat transfer during the growth of thin films from solution following exposure to ultraviolet (UV) light. Irradiation of the growth cell occurs at various directions relative to gravitational acceleration. Through numerical computations, the steady-state flow and temperature profiles are simulated during the course of light exposure. Light-induced polymerization accompanies a heat transfer process through a fairly complicated recirculating flow pattern. A scaling analysis shows that buoyancy-driven velocities only reduce by a factor of 10 for gravity levels as low as 10(exp -2) g(sub 0). Paley et al. observe what appears to be gravitationally sensitive particle development and inclusion in thin films using a photodeposition process. From this study, it is clear that production of homogeneous thin films would have to occur in the environment of a complicated flow pattern of recirculation with a nonuniform temperature distribution. Indeed, even when irradiation occurs from the top of the cell, the most stable stratified cell orientation, defects remain in our films due to the persistence of buoyancy-driven convection. To achieve homogeneity, minimal scattering centers, and possible molecular order, photodeposition of polymer films by UV light exposure must proceed in a reduced-convection environment. Fluid mechanics simulations are useful for establishing gravitational sensitivity to this recently discovered process (patent # 5,451,433) for preparing thin films having quite promising nonlinear optical characteristics.

Desertification of the peritoneum by thin-film evaporation during laparoscopy.

PubMed

Ott, Douglas E

2003-01-01

To assess the effects of gas flow during insufflation on peritoneal fluid and peritoneal tissue regarding transient thermal behavior and thin-film evaporation. The effects of laparoscopic gas on peritoneal cell desiccation and peritoneal fluid thin-film evaporation were analyzed. Measurment of tissue and peritoneal fluid and analysis of gas flow dynamics during laparoscopy. High-velocity gas interface conditions during laparoscopic gas insufflation result in peritoneal surface temperature and decreases up to 20 degrees C/second due to rapid thin-film evaporation of the peritoneal fluid. Evaporation of the thin film of peritoneal fluid extends quickly to the peritoneal cell membrane, causing peritoneal cell desiccation, internal cytoplasmic stress, and disruption of the cell membrane, resulting in loss of peritoneal surface continuity and integrity. Changing the gas conditions to 35 degrees C and 95% humidity maintains normal peritoneal fluid thin-film characteristics, cellular integrity, and prevents evaporative losses. Cold, dry gas and the characteristics of the laparoscopic gas delivery apparatus cause local peritoneal damaging alterations by high-velocity gas flow with extremely dry gas, creating extreme arid surface conditions, rapid evaporative and hydrological changes, tissue desiccation, and peritoneal fluid alterations that contribute to the process of desertification and thin-film evaporation. Peritoneal desertification is preventable by preconditioning the gas to 35 degrees C and 95% humidity.

Fluorination of amorphous thin-film materials with xenon fluoride

DOEpatents

Weil, R.B.

1987-05-01

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Fluorination of amorphous thin-film materials with xenon fluoride

DOEpatents

Weil, Raoul B.

1988-01-01

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

Finite size effects in phase transformation kinetics in thin films and surface layers

NASA Astrophysics Data System (ADS)

Trofimov, Vladimir I.; Trofimov, Ilya V.; Kim, Jong-Il

2004-02-01

In studies of phase transformation kinetics in thin films, e.g. crystallization of amorphous films, until recent time is widely used familiar Kolmogorov-Johnson-Mehl-Avrami (KJMA) statistical model of crystallization despite it is applicable only to an infinite medium. In this paper a model of transformation kinetics in thin films based on a concept of the survival probability for randomly chosen point during transformation process is presented. Two model versions: volume induced transformation (VIT) when the second-phase grains nucleate over a whole film volume and surface induced transformation (SIT) when they form on an interface with two nucleation mode: instantaneous nucleation at transformation onset and continuous one during all the process are studied. At VIT-process due to the finite film thickness effects the transformation profile has a maximum in a film middle, whereas that of the grains population reaches a minimum inhere, the grains density is always higher than in a volume material, and the thinner film the slower it transforms. The transformation kinetics in a thin film obeys a generalized KJMA equation with parameters depending on a film thickness and in limiting cases of extremely thin and thick film it reduces to classical KJMA equation for 2D- and 3D-system, respectively.

Harnessing Thin-Film Continuous-Flow Assembly Lines.

PubMed

Britton, Joshua; Castle, Jared W; Weiss, Gregory A; Raston, Colin L

2016-07-25

Inspired by nature's ability to construct complex molecules through sequential synthetic transformations, an assembly line synthesis of α-aminophosphonates has been developed. In this approach, simple starting materials are continuously fed through a thin-film reactor where the intermediates accrue molecular complexity as they progress through the flow system. Flow chemistry allows rapid multistep transformations to occur via reaction compartmentalization, an approach not amenable to using conventional flasks. Thin film processing can also access facile in situ solvent exchange to drive reaction efficiency, and through this method, α-aminophosphonate synthesis requires only 443 s residence time to produce 3.22 g h(-1) . Assembly-line synthesis allows unprecedented reaction flexibility and processing efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of full 3-D, thin-film 3-D, and thin-film plate analyses of a postbuckled embedded delamination

NASA Technical Reports Server (NTRS)

Whitcomb, John D.

1989-01-01

Strain-energy release rates are often used to predict when delamination growth will occur in laminates under compression. Because of the inherently high computational cost of performing such analyses, less rigorous analyses such as thin-film plate analysis were used. The assumptions imposed by plate theory restrict the analysis to the calculation of total strain energy, G(sub t). The objective is to determine the accuracy of thin-film plate analysis by comparing the distribution of G(sub t) calculated using fully three dimensional (3D), thin-film 3D, and thin-film plate analyses. Thin-film 3D analysis is the same as thin-film plate analysis, except 3D analysis is used to model the sublaminate. The 3D stress analyses were performed using the finite element program NONLIN3D. The plate analysis results were obtained from published data, which used STAGS. Strain-energy release rates were calculated using variations of the virtual crack closure technique. The results demonstrate that thin-film plate analysis can predict the distribution of G(sub t) quite well, at least for the configurations considered. Also, these results verify the accuracy of the strain-energy release rate procedure for plate analysis.

Thin-film decoupling capacitors for multi-chip modules

NASA Astrophysics Data System (ADS)

Dimos, D.; Lockwood, S. J.; Schwartz, R. W.; Rogers, M. S.

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ((var epsilon) greater than or equal to 900), low dielectric losses (tan(delta) = 0.01), excellent insulation resistances (rho greater than 10(exp 13) (Omega)-cm at 125 C), and good breakdown field strengths (E(sub B) = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 micron thick, which results in a large capacitance/area (8-9 nF/sq mm). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

Thin film ion conducting coating

DOEpatents

Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

1989-01-01

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Flexible PZT Thin Film Tactile Sensor for Biomedical Monitoring

PubMed Central

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-01-01

This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g. PMID:23698262

Flexible PZT thin film tactile sensor for biomedical monitoring.

PubMed

Tseng, Hong-Jie; Tian, Wei-Cheng; Wu, Wen-Jong

2013-04-25

This paper presents the development of tactile sensors using the sol-gel process to deposit a PZT thin-film from 250 nm to 1 μm on a flexible stainless steel substrate. The PZT thin-film tactile sensor can be used to measure human pulses from several areas, including carotid, brachial, finger, ankle, radial artery, and the apical region. Flexible PZT tactile sensors can overcome the diverse topology of various human regions and sense the corresponding signals from human bodies. The measured arterial pulse waveform can be used to diagnose hypertension and cardiac failure in patients. The proposed sensors have several advantages, such as flexibility, reliability, high strain, low cost, simple fabrication, and low temperature processing. The PZT thin-film deposition process includes a pyrolysis process at 150 °C/500 °C for 10/5 min, followed by an annealing process at 650 °C for 10 min. Finally, the consistent pulse wave velocity (PWV) was demonstrated based on human pulse measurements from apical to radial, brachial to radial, and radial to ankle. It is characterized that the sensitivity of our PZT-based tactile sensor was approximately 0.798 mV/g.

Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

NASA Astrophysics Data System (ADS)

Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2014-06-01

A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

Temperature dependence of LRE-HRE-TM thin films

NASA Astrophysics Data System (ADS)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Method of producing amorphous thin films

DOEpatents

Brusasco, Raymond M.

1992-01-01

Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

Method of producing amorphous thin films

DOEpatents

Brusasco, R.M.

1992-09-01

Disclosed is a method of producing thin films by sintering which comprises: (a) coating a substrate with a thin film of an inorganic glass forming material possessing the capability of being sintered; and (b) irradiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed. 4 figs.

Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jingyu; Xiao, Yihan; Xu, Ting

Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules withmore » a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. Lastly, the present studies opened a viable route to achieve designer functional composite thin films via kinetic control.« less

Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Jingyu; Xiao, Yihan; Xu, Ting

Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules withmore » a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. The present studies opened a viable route to achieve designer functional composite thin films via kinetic control.« less

Achieving 3-D Nanoparticle Assembly in Nanocomposite Thin Films via Kinetic Control

DOE PAGES

Huang, Jingyu; Xiao, Yihan; Xu, Ting

2017-02-20

Nanocomposite thin films containing well-ordered nanoparticle (NP) assemblies are ideal candidates for the fabrication of metamaterials. Achieving 3-D assembly of NPs in nanocomposite thin films is thermodynamically challenging as the particle size gets similar to that of a single polymer chain. The entropic penalties of polymeric matrix upon NP incorporation leads to NP aggregation on the film surface or within the defects in the film. Controlling the kinetic pathways of assembly process provides an alternative path forward by arresting the system in nonequilibrium states. Here, we report the thin film 3-D hierarchical assembly of 20 nm NPs in supramolecules withmore » a 30 nm periodicity. By mediating the NP diffusion kinetics in the supramolecular matrix, surface aggregation of NPs was suppressed and NPs coassemble with supramolecules to form new 3-D morphologies in thin films. Lastly, the present studies opened a viable route to achieve designer functional composite thin films via kinetic control.« less

Advances in polycrystalline thin-film photovoltaics for space applications

NASA Technical Reports Server (NTRS)

Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

1994-01-01

Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical

Dynamics and stability of thin liquid films

NASA Astrophysics Data System (ADS)

Craster, R. V.; Matar, O. K.

2009-07-01

The dynamics and stability of thin liquid films have fascinated scientists over many decades: the observations of regular wave patterns in film flows down a windowpane or along guttering, the patterning of dewetting droplets, and the fingering of viscous flows down a slope are all examples that are familiar in daily life. Thin film flows occur over a wide range of length scales and are central to numerous areas of engineering, geophysics, and biophysics; these include nanofluidics and microfluidics, coating flows, intensive processing, lava flows, dynamics of continental ice sheets, tear-film rupture, and surfactant replacement therapy. These flows have attracted considerable attention in the literature, which have resulted in many significant developments in experimental, analytical, and numerical research in this area. These include advances in understanding dewetting, thermocapillary- and surfactant-driven films, falling films and films flowing over structured, compliant, and rapidly rotating substrates, and evaporating films as well as those manipulated via use of electric fields to produce nanoscale patterns. These developments are reviewed in this paper and open problems and exciting research avenues in this thriving area of fluid mechanics are also highlighted.

The Evolution of Fabricated Gold Thin Films to Nano-Micro Particles Under Thermal Annealing Process

NASA Astrophysics Data System (ADS)

Hajivaliei, Mahdi; Nazari, Saeed

2016-06-01

Gold (Au) thin films with thickness of 35nm were prepared by electron beam deposition onto flat glass substrates under high vacuum (5.3×10-3Pa) condition and they were annealed in the range of 573-873 K for 1 and 2h in atmospheric pressure. The influence of the annealing temperature on the evolution of Au thin film to nano-micro particles was studied. Moreover, the basic properties of the films, namely morphological, structural and optical were investigated. The X-ray diffraction (XRD) analysis revealed that the Au thin films were cubic structure phase with lattice parameter around a=4.0786Å. The most preferential orientation is along (111) planes for all Au films. The lattice parameter and grain size in the films were calculated by X-ray patterns and correlated with annealing temperatures. The obtained results of ultraviolet-visible spectrometry (UV-Vis) indicate that with increasing annealing temperature, the surface plasmon resonance peak of gold nanocrystallite will disappear which implies the size of particles are grown. Field-emission scanning electron microscopy (FE-SEM) results show that the prepared gold thin films have been converted to nano-micro gold particles in different annealing temperatures. These results lead to controlling the size of produced nanocrystallite.

Barium ferrite thin-film recording media

NASA Astrophysics Data System (ADS)

Sui, Xiaoyu; Scherge, Matthias; Kryder, Mark H.; Snyder, John E.; Harris, Vincent G.; Koon, Norman C.

1996-03-01

Both longitudinal and perpendicular barium ferrite thin films are being pursued as overcoatless magnetic recording media. In this paper, prior research on thin-film Ba ferrite is reviewed and the most recent results are presented. Self-textured high-coercivity longitudinal Ba ferrite thin films have been achieved using conventional rf diode sputtering. Microstructural studies show that c-axis in-plane oriented grains have a characteristic acicular shape, while c-axis perpendicularly oriented grains have a platelet shape. Extended X-ray absorption fine structure (EXAFS) measurements indicate that the crystal orientations are predetermined by the structural anisotropy in the as-sputtered 'amorphous' state. Recording tests on 1500 Oe coercivity longitudinal Ba ferrite disks show performance comparable with that of a 1900 Oe Co alloy disk. To further improve the recording performance, both grain size and aspect ratio need to be reduced. Initial tribological tests indicate high hardness of Ba ferrite thin films. However, surface roughness needs to be reduced. For future ultrahigh-density contact recording, it is believed that perpendicular recording may be used. A thin Pt underlayer has been found to be capable of producing Ba ferrite thin films with excellent c-axis perpendicular orientation.

Gas Permeation in Thin Glassy Polymer Films

NASA Astrophysics Data System (ADS)

Paul, Donald

2011-03-01

The development of asymmetric and composite membranes with very thin dense ``skins'' needed to achieve high gas fluxes enabled the commercial use of membranes for molecular level separations. It has been generally assumed that these thin skins, with thicknesses of the order of 100 nm, have the same permeation characteristics as films with thicknesses of 25 microns or more. Thick films are easily made in the laboratory and have been used extensively for measuring permeation characteristics to evaluate the potential of new polymers for membrane applications. There is now evidence that this assumption can be in very significant error, and use of thick film data to select membrane materials or predict performance should be done with caution. This presentation will summarize our work on preparing films of glassy polymers as thin as 20 nm and characterizing their behavior by gas permeation, ellipsometry and positron annihilation lifetime spectroscopy. Some of the most important polymers used commercially as gas separation membranes, i.e., Matrimid polyimide, polysulfone (PSF) and poly(2,6-dimethyl-1,4-phenylene oxide) (PPO), have been made into well-defined thin films in our laboratories by spin casting techniques and their properties studied using the techniques we have developed. These thin films densify (or physically age) much faster than thicker films, and, as result, the permeability decreases, sometimes by several-fold over weeks or months for thin films. This means that the properties of these thin films can be very different from bulk films. The techniques, interpretations and implications of these observations will be discussed. In a broader sense, gas permeation measurements can be a powerful way of developing a better understanding of the effects of polymer chain confinement and/or surface mobility on the behavior of thin films.

Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

PubMed

Plassmeyer, Paul N; Archila, Kevin; Wager, John F; Page, Catherine J

2015-01-28

Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

Formation and prevention of fractures in sol-gel-derived thin films.

PubMed

Kappert, Emiel J; Pavlenko, Denys; Malzbender, Jürgen; Nijmeijer, Arian; Benes, Nieck E; Tsai, Peichun Amy

2015-02-07

Sol-gel-derived thin films play an important role as the functional coatings for various applications that require crack-free films to fully function. However, the fast drying process of a standard sol-gel coating often induces mechanical stresses, which may fracture the thin films. An experimental study on the crack formation in sol-gel-derived silica and organosilica ultrathin (submicron) films is presented. The relationships among the crack density, inter-crack spacing, and film thickness were investigated by combining direct micrograph analysis with spectroscopic ellipsometry. It is found that silica thin films are more prone to fracturing than organosilica films and have a critical film thickness of 300 nm, above which the film fractures. In contrast, the organosilica films can be formed without cracks in the experimentally explored regime of film thickness up to at least 1250 nm. These results confirm that ultrathin organosilica coatings are a robust silica substitute for a wide range of applications.

Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.

PubMed

Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei

2018-03-06

Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This review surveys the recent advances in solution-based oxide TFTs, including n-type oxide semiconductors, oxide dielectrics and p-type oxide semiconductors. Firstly, we provide an introduction on oxide TFTs and the TFT configurations and operating principles. Secondly, we present the recent progress in solution-processed n-type transistors, with a special focus on low-temperature and large-area solution processed approaches as well as novel non-display applications. Thirdly, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-voltage electronics. Fourthly, we discuss the recent progress in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw the conclusions and outline the perspectives over the research field.

DC magnetron sputtered polyaniline-HCl thin films for chemical sensing applications.

PubMed

Menegazzo, Nicola; Boyne, Devon; Bui, Holt; Beebe, Thomas P; Booksh, Karl S

2012-07-03

Thin films of conducting polymers exhibit unique chemical and physical properties that render them integral parts in microelectronics, energy storage devices, and chemical sensors. Overall, polyaniline (PAni) doped in acidic media has shown metal-like electronic conductivity, though exact physical and chemical properties are dependent on the polymer structure and dopant type. Difficulties arising from poor processability render production of doped PAni thin films particularly challenging. In this contribution, DC magnetron sputtering, a physical vapor deposition technique, is applied to the preparation of conductive thin films of PAni doped with hydrochloric acid (PAni-HCl) in an effort to circumvent issues associated with conventional thin film preparation methods. Samples manufactured by the sputtering method are analyzed along with samples prepared by conventional drop-casting. Physical characterization (atomic force microscopy, AFM) confirm the presence of PAni-HCl and show that films exhibit a reduced roughness and potentially pinhole-free coverage of the substrate. Spectroscopic evidence (UV-vis, FT-IR, and X-ray photoelectron spectroscopy (XPS)) suggests that structural changes and loss of conductivity, not uncommon during PAni processing, does occur during the preparation process. Finally, the applicability of sputtered films to gas-phase sensing of NH(3) was investigated with surface plasmon resonance (SPR) spectroscopy and compared to previous contributions. In summary, sputtered PAni-HCl films exhibit quantifiable, reversible behavior upon exposure to NH(3) with a calculated LOD (by method) approaching 0.4 ppm NH(3) in dry air.

Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi

We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10{sup 8} and a field-effect mobility of 0.3 cm{sup 2} V{sup −1} s{supmore » −1}. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.« less

Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Sakai, Masatoshi; Koh, Tokuyuki; Toyoshima, Kenji; Nakamori, Kouta; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Shinamura, Shoji; Kudo, Kazuhiro

2017-07-01

A solvent-free printing process for printed electronics is successfully developed using toner-type patterning of organic semiconductor toner particles and the subsequent thin-film formation. These processes use the same principle as that used for laser printing. The organic thin-film transistors are prepared by electrically distributing the charged toner onto a Au electrode on a substrate film, followed by thermal lamination. The thermal lamination is effective for obtaining an oriented and crystalline thin film. Toner printing is environmentally friendly compared with other printing technologies because it is solvent free, saves materials, and enables easy recycling. In addition, this technology simultaneously enables both wide-area and high-resolution printing.

Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

2018-05-01

We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

PubMed Central

Seo, Jin-Suk; Jeon, Jun-Hyuck; Hwang, Young Hwan; Park, Hyungjin; Ryu, Minki; Park, Sang-Hee Ko; Bae, Byeong-Soo

2013-01-01

Transparent flexible fluorine-doped indium zinc oxide (IZO:F) thin-film transistors (TFTs) were demonstrated using the spin-coating method of the metal fluoride precursor aqueous solution with annealing at 200°C for 2 hrs on polyethylene naphthalate films. The proposed thermal evolution mechanism of metal fluoride aqueous precursor solution examined by thermogravimetric analysis and Raman spectroscopy can easily explain oxide formation. The chemical composition analysed by XPS confirms that the fluorine was doped in the thin films annealed below 250°C. In the IZO:F thin films, a doped fluorine atom substitutes for an oxygen atom generating a free electron or occupies an oxygen vacancy site eliminating an electron trap site. These dual roles of the doped fluorine can enhance the mobility and improve the gate bias stability of the TFTs. Therefore, the transparent flexible IZO:F TFT shows a high mobility of up to 4.1 cm2/V·s and stable characteristics under the various gate bias and temperature stresses. PMID:23803977

Solution-processed BiI 3 thin films for photovoltaic applications: Improved carrier collection via solvent annealing

DOE PAGES

Hamdeh, Umar H.; Nelson, Rainie D.; Ryan, Bradley J.; ...

2016-08-26

Here, we report all-inorganic solar cells based on solution-processed BiI 3. Two-electron donor solvents such as tetrahydrofuran and dimethylformamide were found to form adducts with BiI 3, which make them highly soluble in these solvents. BiI 3 thin films were deposited by spin-coating. Solvent annealing BiI 3 thin films at relatively low temperatures (≤100 °C) resulted in increased grain size and crystallographic reorientation of grains within the films. The BiI3 films were stable against oxidation for several months and could withstand several hours of annealing in air at temperatures below 150 °C without degradation. Surface oxidation was found to improvemore » photovoltaic device performance due to the formation of a BiOI layer at the BiI 3 surface which facilitated hole extraction. Nonoptimized BiI 3 solar cells achieved the highest power conversion efficiencies of 1.0%, demonstrating the potential of BiI 3 as a nontoxic, air-stable metal-halide absorber material for photovoltaic applications.« less

Thin Film Sensors for Surface Measurements

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Wrbanek, John D.; Fralick, Gustave C.

2001-01-01

Advanced thin film sensors that can provide accurate surface temperature, strain, and heat flux measurements have been developed at NASA Glenn Research Center. These sensors provide minimally intrusive characterization of advanced propulsion materials and components in hostile, high-temperature environments as well as validation of propulsion system design codes. The sensors are designed for applications on different material systems and engine components for testing in engine simulation facilities. Thin film thermocouples and strain gauges for the measurement of surface temperature and strain have been demonstrated on metals, ceramics and advanced ceramic-based composites of various component configurations. Test environments have included both air-breathing and space propulsion-based engine and burner rig environments at surface temperatures up to 1100 C and under high gas flow and pressure conditions. The technologies developed for these sensors as well as for a thin film heat flux gauge have been integrated into a single multifunctional gauge for the simultaneous real-time measurement of surface temperature, strain, and heat flux. This is the first step toward the development of smart sensors with integrated signal conditioning and high temperature electronics that would have the capability to provide feedback to the operating system in real-time. A description of the fabrication process for the thin film sensors and multifunctional gauge will be provided. In addition, the material systems on which the sensors have been demonstrated, the test facilities and the results of the tests to-date will be described. Finally, the results will be provided of the current effort to demonstrate the capabilities of the multifunctional gauge.

Processing effects on the microstructure and dielectric properties of hydrothermal barium titanate and (barium,strontium)titanate thin films

NASA Astrophysics Data System (ADS)

McCormick, Mark Alan

The goal of this work was to produce BaTiO3 and BaxSr (1-x)TiO3 (BST) thin films with high dielectric constants, using a low-temperature (<100°C) hydrothermal synthesis route. To accomplish this, titanium metal-organic precursor films were spin-cast onto metal-coated glass substrates and converted to polycrystalline BaTiO3 or BST upon reacting in aqueous solutions of Ba(OH)2 or Ba(OH)2 and Sr(OH)2. The influences of solution molarity, processing temperature, and reaction time on thin film reaction kinetics, microstructure, and dielectric properties were examined for BaTiO3 films. Post-deposition annealing at temperatures as low as 200°C substantially affected the lattice parameter, dielectric constant, and dielectric loss. This behavior is explained in terms of hydroxyl defect incorporation during film formation. Current-voltage (I-V) measurements were performed to determine the dominant conduction mechanism(s) during application of a do field, and to extract the metal/ceramic barrier height. In particular, Schottky barrier-limited conduction and Poole-Frenkel conduction were investigated as potential leakage mechanisms. For BST thin films, film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The dielectric constant of the BST films was measured as a function of composition (Ba:Sr ratio) and temperature over the range 25--150°C. Finally, capacitance-voltage (C-V) measurements were made for BST films to determine the influence of film composition on dielectric tunability.

Chalcogenide phase-change thin films used as grayscale photolithography materials.

PubMed

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

DOEpatents

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Rapid prototyping of all-solution-processed multi-lengthscale electrodes using polymer-induced thin film wrinkling

PubMed Central

Gabardo, Christine M.; Adams-McGavin, Robert C.; Fung, Barnabas C.; Mahoney, Eric J.; Fang, Qiyin; Soleymani, Leyla

2017-01-01

Three-dimensional electrodes that are controllable over multiple lengthscales are very important for use in bioanalytical systems that integrate solid-phase devices with solution-phase samples. Here we present a fabrication method based on all-solution-processing and thin film wrinkling using smart polymers that is ideal for rapid prototyping of tunable three-dimensional electrodes and is extendable to large volume manufacturing. Although all-solution-processing is an attractive alternative to vapor-based techniques for low-cost manufacturing of electrodes, it often results in films suffering from low conductivity and poor substrate adhesion. These limitations are addressed here by using a smart polymer to create a conformal layer of overlapping wrinkles on the substrate to shorten the current path and embed the conductor onto the polymer layer. The structural evolution of these wrinkled electrodes, deposited by electroless deposition onto a nanoparticle seed layer, is studied at varying deposition times to understand its effects on structural parameters such as porosity, wrinkle wavelength and height. Furthermore, the effect of structural parameters on functional properties such as electro-active surface area and surface-enhanced Raman scattering is investigated. It is found that wrinkling of electroless-deposited thin films can be used to reduce sheet resistance, increase surface area, and enhance the surface-enhanced Raman scattering signal. PMID:28211898

Rapid prototyping of all-solution-processed multi-lengthscale electrodes using polymer-induced thin film wrinkling

NASA Astrophysics Data System (ADS)

Gabardo, Christine M.; Adams-McGavin, Robert C.; Fung, Barnabas C.; Mahoney, Eric J.; Fang, Qiyin; Soleymani, Leyla

2017-02-01

Three-dimensional electrodes that are controllable over multiple lengthscales are very important for use in bioanalytical systems that integrate solid-phase devices with solution-phase samples. Here we present a fabrication method based on all-solution-processing and thin film wrinkling using smart polymers that is ideal for rapid prototyping of tunable three-dimensional electrodes and is extendable to large volume manufacturing. Although all-solution-processing is an attractive alternative to vapor-based techniques for low-cost manufacturing of electrodes, it often results in films suffering from low conductivity and poor substrate adhesion. These limitations are addressed here by using a smart polymer to create a conformal layer of overlapping wrinkles on the substrate to shorten the current path and embed the conductor onto the polymer layer. The structural evolution of these wrinkled electrodes, deposited by electroless deposition onto a nanoparticle seed layer, is studied at varying deposition times to understand its effects on structural parameters such as porosity, wrinkle wavelength and height. Furthermore, the effect of structural parameters on functional properties such as electro-active surface area and surface-enhanced Raman scattering is investigated. It is found that wrinkling of electroless-deposited thin films can be used to reduce sheet resistance, increase surface area, and enhance the surface-enhanced Raman scattering signal.

Semiconductor-nanocrystal/conjugated polymer thin films

DOEpatents

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Semiconductor-nanocrystal/conjugated polymer thin films

DOEpatents

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2010-08-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Transient phases during crystallization of solution-processed organic thin films

NASA Astrophysics Data System (ADS)

Wan, Jing; Li, Yang; Ulbrandt, Jeffery; Smilgies, Detlef-M.; Hollin, Jonathan; Whalley, Adam; Headrick, Randall

We report an in-situ study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor thin film deposition from solution via hollow pen writing, which exhibits multiple transient phases during crystallization. Under high writing speed (25 mm/s) the films have an isotropic morphology, although the mobilities range up to 3.0 cm2/V.s. To understand the crystallization in this highly non-equilibrium regime, we employ in-situ microbeam grazing incidence wide-angle X-ray scattering combined with optical video microscopy at different deposition temperatures. A sequence of crystallization was observed in which a layered liquid-crystalline (LC) phase of C8-BTBT precedes inter-layer ordering. For films deposited above 80ºC, a transition from LC phase to a transient crystalline state that we denote as Cr1 occurs after a temperature-dependent incubation time, which is consistent with classical nucleation theory. After an additional ~ 0.5s, Cr1 transforms to the final stable structure Cr2. Based on these results, we demonstrate a method to produce large crystalline grain size and high carrier mobility during high-speed processing by controlling the nucleation rate during the transformation from the LC phase. Nsf DMR-1307017, NSF DMR-1332208.

Thin film absorber for a solar collector

DOEpatents

Wilhelm, William G.

1985-01-01

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Self-assembly of dodecaphenyl POSS thin films

NASA Astrophysics Data System (ADS)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Thin-film Rechargeable Lithium Batteries

DOE R&D Accomplishments Database

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-01

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Enhanced performance of solution-processed organic thin-film transistors with a low-temperature-annealed alumina interlayer between the polyimide gate insulator and the semiconductor.

PubMed

Yoon, Jun-Young; Jeong, Sunho; Lee, Sun Sook; Kim, Yun Ho; Ka, Jae-Won; Yi, Mi Hye; Jang, Kwang-Suk

2013-06-12

We studied a low-temperature-annealed sol-gel-derived alumina interlayer between the organic semiconductor and the organic gate insulator for high-performance organic thin-film transistors. The alumina interlayer was deposited on the polyimide gate insulator by a simple spin-coating and 200 °C-annealing process. The leakage current density decreased by the interlayer deposition: at 1 MV/cm, the leakage current densities of the polyimide and the alumina/polyimide gate insulators were 7.64 × 10(-7) and 3.01 × 10(-9) A/cm(2), respectively. For the first time, enhancement of the organic thin-film transistor performance by introduction of an inorganic interlayer between the organic semiconductor and the organic gate insulator was demonstrated: by introducing the interlayer, the field-effect mobility of the solution-processed organic thin-film transistor increased from 0.35 ± 0.15 to 1.35 ± 0.28 cm(2)/V·s. Our results suggest that inorganic interlayer deposition could be a simple and efficient surface treatment of organic gate insulators for enhancing the performance of solution-processed organic thin-film transistors.

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

PubMed Central

Yeh, Min-Yen; Lei, Po-Hsun; Lin, Shao-Hsein; Yang, Chyi-Da

2016-01-01

Cu2ZnSnS4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2), zinc chloride (ZnCl2), tin chloride (SnCl2), and thiourea (SC(NH2)2), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm2, and fill-factor (FF) = 66%. PMID:28773647

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Solution-Processed Cu2ZnSn(S,Se) 4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source.

PubMed

Guo, Jing; Pei, Yingli; Zhou, Zhengji; Zhou, Wenhui; Kou, Dongxing; Wu, Sixin

2015-12-01

Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.

Visualization of nanosecond laser-induced dewetting, ablation and crystallization processes in thin silicon films

NASA Astrophysics Data System (ADS)

Qi, Dongfeng; Zhang, Zifeng; Yu, Xiaohan; Zhang, Yawen

2018-06-01

In the present work, nanosecond pulsed laser crystallization, dewetting and ablation of thin amorphous silicon films are investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 7 ns temporal width are irradiated on silicon film. Below the dewetting threshold, crystallization process happens after 400 ns laser irradiation in the spot central region. With the increasing of laser fluence, it is observed that the dewetting process does not conclude until 300 ns after the laser irradiation, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to solidification of transported matter at about 500 ns following the laser pulse exposure.

Piezoelectric thin films and their applications for electronics

NASA Astrophysics Data System (ADS)

Yoshino, Yukio

2009-03-01

ZnO and AlN piezoelectric thin films have been studied for applications in bulk acoustic wave (BAW) resonator. This article introduces methods of forming ZnO and AlN piezoelectric thin films by radio frequency sputtering and applications of BAW resonators considering the relationship between the crystallinity of piezoelectric thin films and the characteristics of the BAW resonators. Using ZnO thin films, BAW resonators were fabricated for a contour mode at 3.58 MHz and thickness modes from 200 MHz to 5 GHz. The ZnO thin films were combined with various materials, substrates, and thin films to minimize the temperature coefficient of frequency (TCF). The minimum TCF of BAW resonators was approximately 2 ppm/°C in the range -20 to 80 °C. The electromechanical coupling coefficient (k2) in a 1.9 GHz BAW resonator was 6.9%. Using AlN thin films, 5-20 GHz BAW resonators with an ultrathin membrane were realized. The membrane thickness of a 20 GHz BAW resonator was about 200 nm, k2 was 6.1%, and the quality factor (Q) was about 280. Q decreased with increasing resonant frequency. The value of k2 is almost the same for 5-20 GHz resonators. This result could be obtained by improving the thickness uniformity, by controlling internal stress of thin films, and by controlling the crystallinity of AlN piezoelectric thin film.

Stretchable, adhesive and ultra-conformable elastomer thin films.

PubMed

Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

2016-11-16

Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

High-temperature crystallized thin-film PZT on thin polyimide substrates

NASA Astrophysics Data System (ADS)

Liu, Tianning; Wallace, Margeaux; Trolier-McKinstry, Susan; Jackson, Thomas N.

2017-10-01

Flexible piezoelectric thin films on polymeric substrates provide advantages in sensing, actuating, and energy harvesting applications. However, direct deposition of many inorganic piezoelectric materials such as Pb(Zrx,Ti1-x)O3 (PZT) on polymers is challenging due to the high temperature required for crystallization. This paper describes a transfer process for PZT thin films. The PZT films are first grown on a high-temperature capable substrate such as platinum-coated silicon. After crystallization, a polymeric layer is added, and the polymer-PZT combination is removed from the high-temperature substrate by etching away a release layer, with the polymer layer then becoming the substrate. The released PZT on polyimide exhibits enhanced dielectric response due to reduction in substrate clamping after removal from the rigid substrate. For Pb(Zr0.52,Ti0.48)0.98Nb0.02O3 films, release from Si increased the remanent polarization from 17.5 μC/cm2 to 26 μC/cm2. In addition, poling led to increased ferroelastic/ferroelectric realignment in the released films. At 1 kHz, the average permittivity was measured to be around 1160 after release from Si with a loss tangent below 3%. Rayleigh measurements further confirmed the correlation between diminished substrate constraint and increased domain wall mobility in the released PZT films on polymers.

Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Ameen, M.S.; Kingon, A.I.

1989-01-01

Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr{sup +} or Xe{sup +} ions is preferable to the most commonly used Ar{sup +} ions, since the undesirable phenomena mentioned above are minimized for the first two ions.more » These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs.« less