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Sample records for ii-vi semiconductor nanocrystals

  1. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  2. Photophysical Properties of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gong, Ke

    As it is well known, semiconductor nanocrystals (also called quantum dots, QDs) are being actively pursued for use in many different types of luminescent optical materials. These materials include the active media for luminescence downconversion in artificial lighting, lasers, luminescent solar concentrators and many other applications. Chapter 1 gives general introduction of QDs, which describe the basic physical properties and optical properties. Based on the experimental spectroscopic study, a semiquantitative method-effective mass model is employed to give theoretical prediction and guide. The following chapters will talks about several topics respectively. A predictive understanding of the radiative lifetimes is therefore a starting point for the understanding of the use of QDs for these applications. Absorption intensities and radiative lifetimes are fundamental properties of any luminescent material. Meantime, achievement of high efficiency with high working temperature and heterostructure fabrication with manipulation of lattice strain are not easy and need systematic investigation. To make accurate connections between extinction coefficients and radiative recombination rates, chapter 2 will consider three closely related aspects of the size dependent spectroscopy of II-VI QDs. First, it will consider the existing literature on cadmium selenide (CdSe) QD absorption spectra and extinction coefficients. From these results and fine structure considerations Boltzmann weighted radiative lifetimes are calculated. These lifetimes are compared to values measured on very high quality CdSe and CdSe coated with zinc selenide (ZnSe) shells. Second, analogous literature data are analyzed for cadmium telluride (CdTe) nanocrystals and compared to lifetimes measured for very high quality QDs. Furthermore, studies of the absorption and excitation spectra and measured radiative lifetimes for CdTe/CdSe Type-II core/shell QDs are reported. These results are also analyzed in

  3. Structural transformations in II-VI semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricolleau, C.; Audinet, L.; Gandais, M.; Gacoin, T.

    Colloidal CdS and CdS/ZnS nanostructures were obtained by nucleation and growth in colloidal solution. Their mean sizes range between 3 and 10 nm. The structural properties were studied by the use of high-resolution transmission electron microscopy (HRTEM). Phase transition between the metastable cubic blende-type structure and the stable hexagonal wurtzite-type structure was evidenced to be a function of the size of the CdS clusters. The mechanism of the transition involving stacking faults was determined by the heating of CdS clusters at 200 °C for 30 h. Results concerning structural relations between CdS and ZnS that occur during the epitaxial growth of ZnS on the CdS nanocrystals showed the existence of the hexagonal structure of ZnS, which is the high-temperature phase of ZnS.

  4. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals.

    PubMed

    Zhai, You; Shim, Moonsub

    2015-12-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  5. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhai, You; Shim, Moonsub

    2015-10-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  6. Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor.

    PubMed

    Grandhi, G Krishnamurthy; Tomar, Renu; Viswanatha, Ranjani

    2012-11-27

    Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and hence on the relative alignment of the energy levels between materials. Despite a high demand to obtain size specific band offsets, very few studies exist where meticulous methods like photoelectron spectroscopy are used. However, semiconductor charging during measurements could result in indirect and possibly inaccurate measurements due to shift in valence and conduction band position. Here, in this report, we devise a novel method to study the band offsets by associating an atomic like state with the conduction band and hence obtaining an internal standard. This is achieved by doping copper in semiconductor nanocrystals, leading to the development of a characteristic intragap Cu-related emission feature assigned to the transition from the conduction band to the atomic-like Cu d state. Using this transition we determine the relative band alignment of II-VI semiconductor nanocrystals as a function of size in the below 10 nm size regime. The results are in excellent agreement with the available photoelectron spectroscopy data as well as the theoretical data. We further use this technique to study the excitonic band edge variation as a function of temperature in CdSe nanocrystals. Additionally, surface electronic structure of CdSe nanocrystals have been studied using quantitative measurements of absolute quantum yield and PL decay studies of the Cu related emission and the excitonic emission. The role of TOP and oleic acid as surface passivating ligand molecules has been studied for the first time.

  7. Synthesis, functionalization, and biological tagging applications of II-VI semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Jun

    Fluorescent labeling of biological molecules is a technique that is used widely for analytical purposes in biotechnology and bioengineering. It typically involves the use of an organic dye molecule linked to a moiety that selectively bonds a particular biological molecule, allowing the detection of the latter by the fluorescence of the dye molecule. Semiconductor nanocrystals or quantum dots have emerged as a new class of fluorescent markers with distinct advantages over the traditional organic dyes. Their attractive properties include narrow, symmetric, and bright emission, continuous excitation by any wavelength smaller than the emission wavelength, broad absorption spectrum, long lifetime, resistance to photobleaching, as well as excellent optical and chemical stability that allows their use in lengthy experiments. The focus of this thesis is the synthesis and surface functionalization of ZnSe quantum dots and (ZnSe)ZnS core-shell nanostructures, and their biological conjugation with DNA and protein. The ability to synthesize different populations of quantum dots with narrow emission spectra permits multiplexing, a property that is very important for simultaneous detection of several analytes, which would be very tedious and expensive if done sequentially. Highly luminescent ZnSe nanocrystals have been synthesized using a hot-injection colloidal method. The synthesis was performed in a stirred batch reactor containing liquid hexadecylamine at 310°C. The precursors were diethylzinc diluted in heptane and selenium powder mixed with trioctylphosphine. The mixture of reactants was injected into the batch reactor and the time of reaction was used to control the size and luminescence emission wavelength of the quantum dots. In order to optimize the process various parameters that can influence the photoluminescence property of quantum dots obtained were investigated, such as surfactant addition, temperature, precursor ratio, and mixing conditions. Capping of the Zn

  8. Collision-induced dissociation of II-VI semiconductor nanocrystal precursors, Cd2+ and Zn2+ complexes with trioctylphosphine oxide, sulfide, and selenide.

    PubMed

    Min, Won Ja; Jung, Sunghan; Lim, Sung Jun; Kim, Yongwook; Shin, Seung Koo

    2009-09-03

    The metal (M = Cd2+ and Zn2+) complexes with trioctylphosphine chalcogenide (TOPE, E = O, S, and Se) are prepared by electrospray ionization, and their relative stabilities and intramolecular reactions are studied by collision-induced dissociation (CID) with Xe under single collision conditions. These metal-TOPE complexes are considered as molecular precursors for the colloidal synthesis of II-VI compound semiconductor nanocrystals employing TOPO as a metal-coordinating solvent and TOPS or TOPSe as a chalcogen precursor. Of the various [M + nTOPE]2+ (n = 2-7) ions generated by ESI, the n = 2-4 complexes are characterized by CID as a function of collision energy. The collision energy at 50% dissociation (E50%) is determined from the cracking curve and the relative stabilities of the complexes are established. Between the two metal ions, the zinc-TOPE complexes are more stable than the cadmium-TOPE complexes when n = 2-3, whereas their stabilities are reversed when n = 4. Of the TOPE, TOPO binds most strongly to the metal ion, while TOPSe does most weakly. Upon CID, loss of TOPE occurs exclusively from the tetra-TOPE complexes, while extensive fragmentation of TOPE takes place from the di-TOPE complexes, showing the signature of the metal chacogenide formation. The nucleation of nanocrystals appears to begin with cracking of [M + 2TOPE]2+ (E = S and Se).

  9. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This methodis first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  10. Atomic-Scale Characterization of II-VI Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, David J.

    2013-11-01

    Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

  11. Recent Progress in Photocatalysis Mediated by Colloidal II-VI Nanocrystals

    PubMed Central

    Wilker, Molly B; Schnitzenbaumer, Kyle J; Dukovic, Gordana

    2012-01-01

    The use of photoexcited electrons and holes in semiconductor nanocrystals as reduction and oxidation reagents is an intriguing way of harvesting photon energy to drive chemical reactions. This review focuses on recent research efforts to understand and control the photocatalytic processes mediated by colloidal II-VI nanocrystalline materials, such as cadmium and zinc chalcogenides. First, we highlight how nanocrystal properties govern the rates and efficiencies of charge-transfer processes relevant to photocatalysis. We then describe the use of nanocrystal catalyst heterostructures for fuel-forming reactions, most commonly H2 generation. Finally, we review the use of nanocrystal photocatalysis as a synthetic tool for metal–semiconductor nano-heterostructures. PMID:24115781

  12. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  13. Taming excitons in II-VI semiconductor nanowires and nanobelts

    NASA Astrophysics Data System (ADS)

    Xu, Xinlong; Zhang, Qing; Zhang, Jun; Zhou, Yixuan; Xiong, Qihua

    2014-10-01

    Excitons are one of the most important fundamental quasi-particles, and are involved in a variety of processes forming the basis of a wide range of opto-electronic and photonic devices based on II-VI semiconductor nanowires and nanobelts, such as light-emitting diodes, photovoltaic cells, photodetectors and nanolasers. A clear understanding of their properties and unveiling the potential engineering for excitons is of particular importance for the design and optimization of nanoscale opto-electronic and photonic devices. Herein, we present a comprehensive review on discussing the fundamental behaviours of the excitons in one-dimensional (1D) II-VI semiconductor nanomaterials (nanowires and nanobelts). We will start with a focus on the unique properties (origin, generation, etc) and dynamics of excitons and exciton complexes in the II-VI semiconductor nanowires and nanobelts. Then we move to the recent progress on the excitonic response in 1D nanomaterials and focus on the tailoring and engineering of excitonic properties through rational controlling of the physical parameters and conditions, intrinsically and extrinsically. These include (1) exciton-exciton interaction, which is important for 1D nanomaterial nanolasing; (2) exciton-phonon interaction, which has interesting applications for laser cooling; and (3) exciton-plasmon interaction, which is the cornerstone towards the realization of plasmonic lasers. The potential of electric field, morphology and size control for excitonic properties is also discussed. Unveiling and controlling excitonic properties in II-VI semiconductor nanowires and nanobelts would promote the development of 1D nanoscience and nanotechnology.

  14. Monolayer II-VI semiconductors: A first-principles prediction

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Li, Xian-Bin; Chen, Nian-Ke; Xie, Sheng-Yi; Tian, Wei Quan; Chen, Yuanping; Xia, Hong; Zhang, S. B.; Sun, Hong-Bo

    2015-09-01

    A systematic study of 32 honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetically stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe, BaTe, and HgTe honeycomb monolayers have a good dynamic stability. The stability of the five oxides is consistent with the work published by Zhuang et al. [Appl. Phys. Lett. 103, 212102 (2013), 10.1063/1.4831972]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P 4 /n m m (129 ) ] and orthorhombic HgS [P 21/m (11 ) ] . The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region. Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin-orbital coupling (SOC) [J. Li et al., arXiv:1412.2528]. Some II-VI partners with less than 5 % lattice mismatch may be used to design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics, and strong correlated electronics.

  15. II-VI Narrow-Bandgap Semiconductors for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Baker, Ian

    The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

  16. II-VI wide band gap semiconductors under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Baquero, R.; Decoss, R.; Olguin, D.

    1993-08-01

    We set an analytical expression for the gap as a function of hydrostatic deformation, E(sub g)(epsilon), by diagonalizing in Gamma the corresponding empirical tight-binding Hamiltonian (ETBH). In the ETBH we use the well known d(exp -2) Harrison scaling law (HSL) to adjust the TB parameter (TBP) to the changes in interatomic distances. We do not consider cation-anion charge transfer. We calculate E(sub g)(epsilon) for wide band gap II-VI semiconductors with zincblende crystal structure for deformations under pressure up to -5 percent. Results are in good agreement with experiment for the compounds of lower ionicity but deviate as the ionicity of the compound increases. This is due to the neglect of charge transfer which should be included self-consistently. Within the approximation we always find a positive second derivative of E(sub g)(epsilon) with respect to epsilon, independent of the material. Furthermore, the inclusion of deviations from HSL appear to be unimportant to this problem.

  17. Dielectric response of II-VI semiconductor core-shell ensembles: Study of the lossless optical condition

    NASA Astrophysics Data System (ADS)

    de la Cruz, R. M.; Kanyinda-Malu, C.

    2014-09-01

    We theoretically investigate optical properties of II-VI core-shell distribution mixtures made of two type-I sized-nanoshells as a plausible negative dielectric function material. The nonlocal optical response of the semiconductor QD is described by using a resonant excitonic dielectric function, while the shell response is modeled with Demangeot formula. Achieving the zero-loss at an optical frequency ω, i.e., ɛeff =ɛeff‧ + iɛeff″ with ɛeff‧ < 0 and ɛeff″ = 0, is of fundamental importance in nanophotonics. Resonant states in semiconductors provide a source for negative dielectric function provided that the dipole strength and the oscillator density are adequate to offset the background. Furthermore, the semiconductor offers the prospect of pumping, either optically or electrically, to achieve a gain mechanism that can offset the loss. We analyse optimal conditions that must be satisfied to achieve semiconductor-based negative index materials. By comparing with II-VI semiconductor quantum dots (QDs) previously reported in the literature, the inclusion of phonon and shell contributions in the ɛeff along with the finite barrier Effective Mass Approximation (EMA) approach, we found similar qualitative behaviours for the ɛeff. The lossless optical condition along with ɛeff‧ < 0 is discussed in terms of sizes, volume fractions and embedding medium of the mixtures' distributions. Furthermore, we estimated optical power to maintain nanocrystals density in excited states and this value is less than that previously obtained in II-VI semiconductor QDs.

  18. Optical dispersion of ternary II-VI semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Liu, Xinyu; Furdyna, J. K.

    2004-06-01

    The wavelength dependence of the refractive indices n of a series of II-VI ternary alloys—ZnCdSe, ZnBeSe, ZnMgSe, ZnMnSe, ZnCdTe, ZnMnTe, ZnMgSe, and ZnSeTe—were measured at frequencies below their respective energy gaps using the combined techniques of optical reflectivity and the prism coupler method. To facilitate the analysis of the results—including those obtained in the wavelength region near the fundamental energy gap—we have modified the semiempirical single-effective-oscillator (SEO) model of n by introducing an additional term that explicitly accounts for interband transitions at the fundamental gap. Using the SEO model modified in this manner to fit the wavelength dependence of n, a set of semiempirical parameters was established for the above ternary II-VI-based alloys, where the fitting parameters for each alloy family are themselves expressed as functions of the alloy composition. The availability of these parameters makes it possible to calculate the index of refraction of any given II-VI ternary alloy for any composition and at any wavelength. Furthermore, these parameters provide valuable physical insights, such as the relationship between the covalency (or ionicity) of the material and its refractive index. In addition to its fundamental usefulness, this approach can—by appropriate extrapolation—also be used for obtaining the dispersion properties for "hypothetical" zinc blende compounds that do not form under equilibrium crystal growth conditions (such as MnTe, MnSe, or BeSe).

  19. Core/Shell semiconductor nanocrystals.

    PubMed

    Reiss, Peter; Protière, Myriam; Li, Liang

    2009-02-01

    Colloidal core/shell nanocrystals contain at least two semiconductor materials in an onionlike structure. The possibility to tune the basic optical properties of the core nanocrystals, for example, their fluorescence wavelength, quantum yield, and lifetime, by growing an epitaxial-type shell of another semiconductor has fueled significant progress on the chemical synthesis of these systems. In such core/shell nanocrystals, the shell provides a physical barrier between the optically active core and the surrounding medium, thus making the nanocrystals less sensitive to environmental changes, surface chemistry, and photo-oxidation. The shell further provides an efficient passivation of the surface trap states, giving rise to a strongly enhanced fluorescence quantum yield. This effect is a fundamental prerequisite for the use of nanocrystals in applications such as biological labeling and light-emitting devices, which rely on their emission properties. Focusing on recent advances, this Review discusses the fundamental properties and synthesis methods of core/shell and core/multiple shell structures of II-VI, IV-VI, and III-V semiconductors.

  20. Persistent Photoconductivity in II-VI Mixed Semiconductors Related Critical Phenomena and Applications

    DTIC Science & Technology

    1991-03-31

    VI Semiconductor Thin Films, (3) Comparison Between II-VI and III-V Semiconductors and (4) PCC Transient Behavior . 14. SIWCT TEI S NtIR0PAE I&Pfcu04 I7...excitation photon dose have been measured. Furthermore, the PPC behavior has been investigated under different bias voltage, Vb. We found for the first... behavior in semiconductor thin films since eventually all the novel opto- electronic devices utilizing PPC mechanism will be fabricated from thin films

  1. Investigation of II-VI Semiconductor Quantum Dots for Sensitized Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Horoz, Sabit

    Semiconductor nanocrystals, also referred to as quantum dots (QDs) which have advantages of low-cost, photostability, high molar extinction coefficients and size-dependent optical properties, have been the focus of great scientific and technological efforts in solar cells development. Due to the multi-electron generation effect, the theoretical maximum efficiency of quantum dots sensitized solar cells (QDSSCs) is much higher than that of dye sensitized solar cells (DSSCs). Thus QDSSCs have a clear potential to overtake the efficiency of other kinds of solar cells. Doped semiconductor QDs can not only retain nearly all advantages of intrinsic QDs, but also have additional absorption bands for improved efficiency. This approach is particularly important for wide band gap semiconductors, for example, zinc based QDs. Zinc based are desirable candidates as they are inexpensive, earth abundant and nontoxic. When doped, they can cover a broad range of visible spectrum. In my project, I aim at developing novel methods for the preparation of II-VI QDs and investigating the effects of doping on the properties and performances of QDSSCs. Cadmium selenide (CdSe), manganese doped cadmium selenide (Mn:CdSe), and manganese doped zinc sulfide (Mn:ZnS) QDs have been synthesized by laser ablation in water. The structural and luminescent properties of the QDs have been investigated. In addition, QDSSC performances of the samples have been measured using nanowire electrode made of ZnO and Zn2SnO 4. I have also successfully synthesized europium doped zinc sulfide (Eu:ZnS) and manganese doped cadmium sulfide (Mn:CdS) nanoparticles by wet chemical method, and analyzed structural, optical, and magnetic properties as well as the device performance of the nanoparticles.

  2. Measurement and applications of dispersion in epitaxial II-VI semiconductor thin films and multilayers

    NASA Astrophysics Data System (ADS)

    Peiris, Frank Channa

    In this thesis we investigate the dispersion of the indices of refraction of II-VI semiconductors, and explore a series of materials combinations which are suited for the fabrication of distributed Bragg reflectors (DBRs). A prism coupler method and reflectivity measurements were used to determine the indices of refraction n of II-VI semiconductor ternary alloys of various compositions prepared by molecular beam epitaxy (MBE). We show that the prism coupler technique, which is capable of measuring n with an accuracy of at least 0.1% at discrete wavelengths, and simultaneously to determine the thickness of the layers with an uncertainty of less than 0.5%, is a very reliable, convenient, and accurate tool for determining compositions and growth rates for MBE. Using the highly accurate values of n obtained from the prism coupler and reflectivity measurements, we have fabricated several DBRs using different II-VI materials. From our work on DBRs, we have obtained a structure (i.e., a 20-period ZnMgSe/ZnCdSe multilayer) which yields 98% reflectivity. This is to our knowledge the highest reflectivity reported for a DBR in the II-VI semiconductor camp. Motivated by this work, we show preliminary results of monolithic microcavities which are fabricated by integrating these high-reflectivity DBRs.

  3. Microwave-assisted synthesis of II-VI semiconductor micro-and nanoparticles towards sensor applications

    NASA Astrophysics Data System (ADS)

    Majithia, Ravish Yogesh

    Engineering particles at the nanoscale demands a high degree of control over process parameters during synthesis. For nanocrystal synthesis, solution-based techniques typically include application of external convective heat. This process often leads to slow heating and allows decomposition of reagents or products over time. Microwave-assisted heating provides faster, localized heating at the molecular level with near instantaneous control over reaction parameters. In this work, microwave-assisted heating has been applied for the synthesis of II-VI semiconductor nanocrystals namely, ZnO nanopods and CdX (X = Se, Te) quantum dots (QDs). Based on factors such as size, surface functionality and charge, optical properties of such nanomaterials can be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm ZnO zero-dimensional nanoparticles as seeds for generation of multi-legged quasi one-dimensional nanopods via heterogeneous nucleation. ZnO nanopods, having individual leg diameters of 13-15 nm and growing along the [0001] direction, can be synthesized in as little as 20 minutes. ZnO nanopods exhibit a broad defect-related PL spanning the visible range with a peak at ~615 nm. Optical sensing based on changes in intensity of the defect PL in response to external environment (e.g., humidity) is demonstrated in this work. Microwave-assisted synthesis was also used for organometallic synthesis of CdX(ZnS) (X = Se, Te) core(shell) QDs. Optical emission of these QDs can be altered based on their size and can be tailored to specific wavelengths. Further, QDs were incorporated in Enhanced Green-Fluorescent Protein -- Ultrabithorax (EGFP-Ubx) fusion protein for the generation of macroscale composite protein fibers via hierarchal self-assembly. Variations in EGFP- Ubx˙QD composite

  4. Properties of Group-IV, III-V and II-VI Semiconductors

    NASA Astrophysics Data System (ADS)

    Adachi, Sadao

    2005-03-01

    Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide. The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some corrective effects and related properties, such as piezoelectric, elastooptic and electrooptic properties, are also discussed. The book contains convenient tables summarizing the various material parameters and the definitions of important semiconductor properties. In addition, graphs are included in order to make the information more quantitative and intuitive. The book is intended not only for semiconductor device engineers, but also physicists and physical chemists, and particularly students specializing in the fields of semiconductor synthesis, crystal growth, semiconductor device physics and technology.

  5. New highly fluorescent biolabels based on II VI semiconductor hybrid organic inorganic nanostructures for bioimaging

    NASA Astrophysics Data System (ADS)

    Santos, B. S.; Farias, P. M. A.; Menezes, F. D.; Brasil, A. G., Jr.; Fontes, A.; Romão, L.; Amaral, J. O.; Moura-Neto, V.; Tenório, D. P. L. A.; Cesar, C. L.; Barbosa, L. C.; Ferreira, R.

    2008-11-01

    Semiconductor quantum dots based on II-VI materials may be prepared to develop good biolabeling properties. In this study we present some well-succeeded results related to the preparation, functionalization and bioconjugation of CdY (Y = S, Se and Te) to biological systems (live cells and fixed tissues). These nanostructured materials were prepared using colloidal synthesis in aqueous media resulting nanoparticles with very good optical properties and an excellent resistance to photodegradation.

  6. Design of cadmium-free colloidal II-VI semiconductor quantum dots exhibiting RGB emission

    NASA Astrophysics Data System (ADS)

    Asano, Hiroshi; Omata, Takahisa

    2017-04-01

    The size and composition dependence of the optical gap of colloidal alloyed quantum dots (QDs) of Zn(Te1-xSex) and Zn(Te1-xSx) were calculated by the finite-depth-well effective mass approximation method. QDs that exhibited red, green and blue emission were explored to develop cadmium-free II-VI chalcogenide-based QD-phosphors. We considered that highly monodisperse colloidal QDs with diameters of 3-6 nm are easy to synthesize and II-VI semiconductor QDs usually exhibit a Stokes shift ranging between 50 and 150 meV. We showed that Zn(Te1-xSex) QDs with 0.02≤x≤0.68, and 0≤x≤0.06, and 0.66≤x≤0.9 may be expected to exhibit green, and blue emission, respectively. Zn(Te1-xSx) QDs with 0.26≤x≤0.37, 0.01≤x≤0.2 and 0.45≤x≤0.61, 0≤x≤0.02, and 0.63≤x≤0.72, should give red, green and blue emission respectively. On the basis of our calculations, we showed that Zn(Te,Se) and Zn(Te,S) QDs are very promising cadmium-free II-VI chalcogenide semiconductor QD phosphors.

  7. Electronic structure of and quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach

    NASA Astrophysics Data System (ADS)

    Viswanatha, Ranjani; Sapra, Sameer; Saha-Dasgupta, Tanusri; Sarma, D. D.

    2005-07-01

    We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that the cation sp3 - anion sp3d5 basis along with the next nearest neighbor model for hopping interactions is sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital, employed previously. Similar analyses were also performed for the II-VI semiconductors, using the more accurate FP-LAPW method compared to previous approaches, in order to enhance reliability of the parameter values. Using these parameters, we calculate the electronic structure of III-V and II-VI nanocrystals in real space with sizes ranging up to about 7nm in diameter, establishing a quantitatively accurate description of the bandgap variation with sizes for the various nanocrystals by comparing with available experimental results from the literature.

  8. Nanocrystal structures

    DOEpatents

    Eisler, Hans J [Stoneham, MA; Sundar, Vikram C [Stoneham, MA; Walsh, Michael E [Everett, MA; Klimov, Victor I [Los Alamos, NM; Bawendi, Moungi G [Cambridge, MA; Smith, Henry I [Sudbury, MA

    2008-12-30

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  9. Large ordered arrays of single photon sources based on II-VI semiconductor colloidal quantum dot.

    PubMed

    Zhang, Qiang; Dang, Cuong; Urabe, Hayato; Wang, Jing; Sun, Shouheng; Nurmikko, Arto

    2008-11-24

    In this paper, we developed a novel and efficient method of deterministically organizing colloidal particles on structured surfaces over macroscopic areas. Our approach utilizes integrated solution-based processes of dielectric encapsulation and electrostatic-force-mediated self-assembly, which allow precisely controlled placement of sub-10nm sized particles at single particle resolution. As a specific demonstration, motivated by application to single photon sources, highly ordered 2D arrays of single II-VI semiconductor colloidal quantum dots (QDs) were created by this method. Individually, the QDs display triggered single photon emission at room temperature with characteristic photon antibunching statistics, suggesting a pathway to scalable quantum optical radiative systems.

  10. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  11. Chemical composition of matrix-embedded ternary II-VI nanocrystals derived from first- and second-order Raman spectra

    NASA Astrophysics Data System (ADS)

    Azhniuk, Yu. M.; Hutych, Yu. I.; Lopushansky, V. V.; Prymak, M. V.; Gomonnai, A. V.; Zahn, D. R. T.

    2016-12-01

    A one- and multiphonon Raman scattering study is performed for an extensive set of CdS1-xSex, Cd1-yZnyS, Cd1-yZnySe, and CdSe1-xTex nanocrystals to investigate the applicability of first- and second-order Raman spectra for the determination of the matrix-embedded ternary nanocrystal composition. For one-mode ternary systems both the LO and 2LO phonon frequencies in the Raman spectra are shown to be a good measure of the nanocrystal composition. For two-mode systems, the approaches based on the difference of the LO phonon frequencies (first-order Raman spectra) or double LO overtone and combination tone frequencies (second-order Raman spectra) as well as on the LO phonon band intensity ratios are analysed. The weak electron-phonon coupling in the II-VI nanocrystals and the polaron constant values for the nanocrystal sublattices are discussed.

  12. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  13. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  14. Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

    SciTech Connect

    Szabo, L.F.; Biter, W.J.

    1988-04-05

    A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

  15. Realistic tight-binding model for the electronic structure of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Sapra, Sameer; Shanthi, N.; Sarma, D. D.

    2002-11-01

    We analyze the electronic structure of group II-VI semiconductors obtained within linearized muffin-tin-orbital approach in order to arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that a nearest-neighbor sp3 d5 model is fairly sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital. The obtained hopping parameters obey the universal scaling law proposed by Harrison, ensuring transferability to other systems. Furthermore, we show that certain subtle features in the bonding of these compounds require the inclusion of anion-anion interactions in addition to the nearest-neighbor cation-anion interactions.

  16. Characterization of convection related defects in II-VI compound semiconductors

    NASA Technical Reports Server (NTRS)

    Witt, August F.

    1993-01-01

    The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

  17. Nuclear Magnetic Resonance Studies of II-Vi and Iii-V Semiconductor Alloys

    NASA Astrophysics Data System (ADS)

    Shi, Jian-Hui

    In this thesis, I show how the basic solid-state NMR techniques can be used to study the local electronic structures of II-VI and III-V semiconductor alloys on an atomic scale. We have focused our studies on a few high quality samples, mainly Hg_{rm 1-x}Cd_{rm x} Te in the II-VI group, In-based binary III-V bulk semiconductors InP, InAs and InSb, and the III-V alloys Ga_{rm 1-x}In _{rm x}As. For solid-state-recrystallized device-quality bulk Hg_{rm 1-x}Cd _{rm x}Te samples, with x equal to 0.2, 0.22 and 0.28, corresponding to the narrow-gap semiconducting side of the band-inversion configurations, we have obtained detailed band-edge symmetry information, and site-selective quantitative charge carrier orbital characteristics on an atomic scale. Our study also indicated that a random cation distribution model well described the materials. We have investigated ^{115 }In magnetic resonance frequency shifts and the temperature dependence of these shifts in In-based III-V binary semiconductors. We have extracted the chemical shifts from the total shifts for these III-V semiconductors at 303K and 77K. Our NMR study of these binary semiconductors not only enhanced the understanding of electronic properties of these compounds, but also served as a reference for our NMR studies of III-V alloys. We performed ^{115}In NMR studies for dilute III-V semiconductor alloy Ga _{rm 1-x}In_ {rm x}As with x equal to 0.72%. Spectra clearly indicating the local electronic configurations were obtained. We carried out a series of field orientation studies, and determined the field gradient which is due to In-In pairs. This study provided evidence of local clustering of In atoms.

  18. Bioengineered II-VI semiconductor quantum dot-carboxymethylcellulose nanoconjugates as multifunctional fluorescent nanoprobes for bioimaging live cells.

    PubMed

    Mansur, Alexandra A P; Mansur, Herman S; Mansur, Rafael L; de Carvalho, Fernanda G; Carvalho, Sandhra M

    2017-08-19

    Colloidal semiconductor quantum dots (QDs) are light-emitting ultra-small nanoparticles, which have emerged as a new class of nanoprobes with unique optical properties for bioimaging and biomedical diagnostic. However, to be used for most biomedical applications the biocompatibility and water-solubility are mandatory that can achieved through surface modification forming QD-nanoconjugates. In this study, semiconductor II-VI quantum dots of type MX (M=Cd, Pb, Zn, X=S) were directly synthesized in aqueous media and at room temperature using carboxymethylcellulose sodium salt (CMC) behaving simultaneously as stabilizing and surface biofunctional ligand. These nanoconjugates were extensively characterized using UV-visible spectroscopy, photoluminescence spectroscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, dynamic light scattering and zeta potential. The results demonstrated that the biopolymer was effective on nucleating and stabilizing the colloidal nanocrystals of CdS, ZnS, and PbS with the average diameter ranging from 2.0 to 5.0nm depending on the composition of the semiconductor core, which showed quantum-size confinement effect. These QD/polysaccharide conjugates showed luminescent activity from UV-visible to near-infrared range of the spectra under violet laser excitation. Moreover, the bioassays performed proved that these novel nanoconjugates were biocompatible and behaved as composition-dependent fluorescent nanoprobes for in vitro live cell bioimaging with very promising perspectives to be used in numerous biomedical applications and nanomedicine. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    DOEpatents

    McCandless, Brian E.

    2001-06-26

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  20. Optical properties of II-VI semiconductor nanoclusters for use as phosphors

    NASA Astrophysics Data System (ADS)

    Wilcoxon, Jess P.; Newcomer, Paula

    2002-11-01

    The optical properties of both II-VI (direct gap) and type IV (indirect gap) nanosize semiconductors are significantly affected not only by their size, but by the nature of the chemical interface of the cluster with the embedding medium. This affects the light conversion efficiency and can alter the shape and position (i.e. the color) of the photoluminescence (PL). As the goal of our work is to embed nanoclusters into either organic or inorganic matrices for use as near UV, LED-excited phosphor thin films, understanding and controlling this interface is very important for preserving the high Q.E. of nanoclusters known for dilute solution conditions. We describe a room temperature synthesis of semiconductor nanoclusters which employs inexpensive, less toxic ionic precursors (metal salts), and simple coordinating solvents (e.g. tetrahydrofuran). This allows us to add passivating agents, ions, metal or semiconductor coatings to identical, highly dispersed bare clusters, post-synthesis. We can also increase the cluster size by heterogeneous growth on the seed nanoclusters. One of the most interesting observations for our II-VI nanomaterials is that both the absorbance excitonic features and the photoluminescence (PL) energy and intensity depend on the nature of the surface as well as the average size. In CdS, for example, the presence of electron traps (i.e Cd(II) sites) decreases the exciton absorbance peak amplitude but increases the PL nearly two-fold. Hole traps (i.e. S(II)) have the opposite effect. In the coordinating solvents used for the synthesis, the PL yield for d~2 nm, blue emitting CdSe clusters increases dramatically with sample age as the multiple absorbance features sharpen. Liquid chromatographic (LC) separation of the nanoclusters from other chemicals and different sized clusters is used to investigate the intrinsic optical properties of the purified clusters and identify which clusters are contributing most strongly to the PL. Both LC and dynamic

  1. Epitaxial growth and characterization of II-VI-semiconductor, one-dimensional nanostructures and thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Zuoming

    In this thesis, I present the results of three material science studies on II-VI semiconductor nanostructures and thin films: (1) epitaxial growth and characterization of one-dimensional ZnO nanostructures, (2) crystal structure and self-assembly of ultrathin ZnO nanorods, and (3) investigations of surface chemistry for atomic layer epitaxy of ZnS thin film on silicon with chemical precursors. First, in Chapter 3, I present a comparative study of metal-surface-catalyzed growth of ZnO nanowires using four different metal catalysts and using substrates of differing materials and crystal orientation. Multiple material diagnostics were employed to compare the material, structural, and optical properties of the nanowires grown using these different surface systems. My study showed that the growth modes of nanowires are dependent on the choice of surface catalysts. Further, the study revealed that these differences in growth modes are also closely related to the differences in materials properties of these wires including the degree of nanowire alignment on substrates, and the atomic composition ratio of Zn/O, as well as the relative intensity of the oxygen vacancy-related emission in photoluminescence spectra. Second, in Chapter 4, I investigated the growth and self-assembly of ultrathin ZnO nanorods using a combination of small-angle and wide-angle synchrotron X-ray diffraction (SAXRD and WAXRD), and TEM. SAXRD and TEM were used to investigate nanorod self-assembly and the influence of surfactant/precursor ratio on self-assembly; WAXRD were used to study the effects of growth chemistry and physical parameters on the nanorod size and lattice constants. These measurements revealed that these rods self-assemble into periodic superstructures and that the surfactant ligands are important in controlling self-assembly. WAXRD results suggest that surface-dependent changes, such as the binding of surface ligands or other adsorbed species may dominate the changes in nanorod

  2. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    NASA Astrophysics Data System (ADS)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  3. Magnetization studies of II-VI semiconductor columnar quantum dots with type-II band alignment

    NASA Astrophysics Data System (ADS)

    Eginligil, M.; Sellers, I. R.; McCombe, B. D.; Chou, W.-C.; Kuskovsky, I. L.

    2009-03-01

    We report SQUID magnetization measurements of MBE-grown type-II, II-VI semiconductor quantum dot (QD) samples, with and without Mn incorporation. In all samples, the easy axis is out-of-plane, possibly due to columnar QD formation that arises from strain interaction between adjacent thin dot-containing layers. In addition, both types of QDs display a non-zero spontaneous magnetic ordering at 300 K. One set of samples consists of five-layers of (Zn,Mn)Te/ZnSe with a nominal (Zn,Mn)Te thickness of 3 nm, and ZnSe spacer thickness of 5 nm and 20 nm. These magnetic QD samples show magnetization vs. temperature behavior that can be interpreted in terms of two independent FM phases characterized by transition temperatures TC1 < TC2. A sample containing no Mn consists of 130 ZnTe/ZnSe layers, which forms Zn(Se,Te) QD layers separated by ZnSe spacers. Evidence of ferromagnetism is also seen in this structure, but the spontaneous magnetization is much weaker. For this sample only one phase is seen with TC above 300 K. Results will be discussed in terms of magneto-polaronic effects and defect-level induced ferromagnetism.

  4. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  5. X-ray absorption and diffraction study of II VI dilute oxide semiconductor alloy epilayers

    NASA Astrophysics Data System (ADS)

    Boscherini, F.; Malvestuto, M.; Ciatto, G.; D'Acapito, F.; Bisognin, G.; DeSalvador, D.; Berti, M.; Felici, M.; Polimeni, A.; Nabetani, Y.

    2007-11-01

    Dilute oxide semiconductor alloys obtained by adding oxygen to a II-VI binary compound are of potential applicative interest for blue-light emitters in which the oxygen content could be used to tune the band gap. Moreover, their properties can be usefully compared to the more thoroughly studied dilute nitrides in order to gain insight into the common mechanisms which give rise to their highly non-linear physical properties. Recently, it has been possible to deposit ZnSeO and ZnSeOS epilayers on GaAs(001), which exhibit a red-shift of the band gap and giant optical bowing. In order to provide a structural basis for an understanding of their physical properties, we have performed a study of a set of ZnSeO and ZnSeOS epilayers on GaAs by high resolution x-ray diffraction and x-ray absorption fine structure. We have found that the strain goes from compressive to tensile with increasing O and S concentration and that, while all epilayers are never found to be pseudomorphic, the ternary ones exhibit a low relaxed fraction if compared to the ZnSe/GaAs sample. O K-edge x-ray absorption near edge spectra and corresponding simulations within the full multiple-scattering regime show that O is substitutionally incorporated in the host lattice. Zn and Se K-edge extended x-ray absorption fine structure detect the formation of Zn-O and Zn-S bonds; the analysis of these spectra within multiple-scattering theory has allowed us to measure the local structural parameters. The value of Zn-Se bond length is found to be in agreement with estimates based on models of local distortions in strained and relaxed epilayers; an increase of the mean-square relative displacement is detected at high O and S concentration and is related to both intrinsic and extrinsic factors.

  6. Two Photon Absorption in II-VI Semiconductors: The Influence of Dimensionality and Size.

    PubMed

    Scott, Riccardo; Achtstein, Alexander W; Prudnikau, Anatol; Antanovich, Artsiom; Christodoulou, Sotirios; Moreels, Iwan; Artemyev, Mikhail; Woggon, Ulrike

    2015-08-12

    We report a comprehensive study on the two-photon absorption cross sections of colloidal CdSe nanoplatelets, -rods, and -dots of different sizes by the means of z-scan and two-photon excitation spectroscopy. Platelets combine large particle volumes with ultra strong confinement. In contrast to weakly confined nanocrystals, the TPA cross sections of CdSe nanoplatelets scale superlinearly with volume (V(∼2)) and show ten times more efficient two-photon absorption than nanorods or dots. This unexpectedly strong shape dependence goes well beyond the effect of local fields. The larger the particles' aspect ratio, the greater is the confinement related electronic contribution to the increased two-photon absorption. Both electronic confinement and local field effects favor the platelets and make them unique two-photon absorbers with outstanding cross sections of up to 10(7) GM, the largest ever reported for (colloidal) semiconductor nanocrystals and ideally suited for two-photon imaging and nonlinear optoelectronics. The obtained results are confirmed by two independent techniques as well as a new self-referencing method.

  7. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  8. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; hide

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  9. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  10. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  11. Elastico-mechanoluminescence and crystal-structure relationships in persistent luminescent materials and II-VI semiconductor phosphors

    NASA Astrophysics Data System (ADS)

    Chandra, B. P.; Chandra, V. K.; Jha, Piyush

    2015-04-01

    Elastico-mechanoluminescence (EML) has recently attracted the attention of a large number of researchers because of its potential in different types of mechano-optical devices. For understanding the mechanism of EML the relationships between elastico-mechanoluminescence (EML) and crystal-structure of a large number of persistent luminescent materials and II-VI semiconductor phosphors known to date are investigated. It is found that, although most of the non-centrosymmetric crystals exhibit EML, certain non-centrosymmetric crystals do not show EML. Whereas, many centrosymmetric crystals do not exhibit EML, certain centrosymmetric crystals exhibit EML. Piezoelectric ZnS:Cu,Cl single crystals do not show EML, but piezoelectric ZnS:Cu,Cl microcrystalline phosphors show very intense EML. Piezoelectric single crystals of undoped ZnS do not show EML. It seems that EML is related to local piezoelectrification near the impurities in crystals where piezoelectric constant is high. Suitable piezoelectric field near the local piezoelectric region and stable charge carriers in traps are required for appearance of EML. The EML of persistent luminescent materials and II-VI semiconductor phosphors can be understood on the basis of piezoelectrically-induced trap-depth reduction model of EML. Using suitable dopants both in non-centrosymmetric and centrosymmetric crystals intense elastico-mechanoluminescent materials emitting desired colours can be tailored, which may find applications in several mechano-optical devices.

  12. Preparation and characterization of II-VI compound semiconductor thin-films

    NASA Astrophysics Data System (ADS)

    Boyer, Leah (Ge Shao)

    In this thesis the pulsed-laser deposition (PLD) method for growing thin-films was discussed and applied to form II-VI compound ZnTe thin-films. The transmission and reflection of these films were measured by different methods and theoretically fitted. The characterization of the selected thin-films was analyzed using x-ray diffraction, scanning electron microscopy (SEM). In order to complete the characterization the photocurrent of ZnTe thin-film on Si substrate was measured. The optical nonlinearity of ZnTe thin-film was theoretically proposed and experimentally measured.

  13. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  14. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe.

    PubMed

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-04-05

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors.

  15. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    PubMed Central

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  16. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  17. Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Chan, P.-Y.; Gogna, M.; Suarez, E.; Karmakar, S.; Al-Amoody, F.; Miller, B. I.; Jain, F. C.

    2011-08-01

    This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal-oxide-semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high- κ II-VI tunnel insulator stack and self-assembled GeO x -cladded Ge quantum dots as the charge storage units. A Si3N4 layer was used as the control gate insulator. Capacitance-voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.

  18. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  19. Chemical trend of exchange coupling in II-VI diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Chanier, Thomas; Hayn, Roland; Virot, François

    2010-03-01

    We present an ab-initio study of the magnetic couplings in Mn- and Co-doped II-VI DMS ZnA (A=O,S,Se,Te). We show the necessity of taking into account the strong electron correlation on the transition metal (TM) 3d level to reproduce correctly the experimental chemical trend. Within the LSDA+U (local spin density approximation with a Hubbard-type correction to TM 3d electrons), we find (i) the d-d exchange couplings between nearest-neighbor magnetic ions to be antiferromagnetic (AFM) of the order of -1 meV and (ii) the sp-d exchange constants between magnetic ions and conduction (valence) band electrons (holes) Nα (Nβ) to be FM (AFM) of the order of 0.1 eV (-1 eV). In ZnMnO and ZnCoO, the strong p-d hybridisation leads to the presence of a bound state above the valence band, the failure of the commonly-used Larson perturbation theory formulae for p-d and d-d exchange interactions [1] and prevents high-Tc ferromagnetism [2]. [1] B. Larson et al. , PRB 37, 4137 (1988) [2] T. Chanier et al. , PRB 79, 205204 (2009)

  20. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chishti, Sabiq; Ghosh, Bahniman; Bishnoi, Bhupesh

    2015-02-01

    We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms considered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature (4-500 K) at a fixed diameter of 10 nm and also by varying the diameter (8-12 nm) at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D'yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length (SRL) on the diameter and temperature has been analyzed.

  1. Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Luo, Jun-Wei; Wei, Su-Huai

    2015-02-01

    Using the first-principles density functional theory method, we systematically investigate the structural and electronic properties of heterovalent interfaces of the lattice-matched II-VI/III-V semiconductors, i.e., ZnTe/GaSb, ZnSe/GaAs, ZnS/GaP, and ZnO/GaN. We find that, independent of the orientations, the heterovalent superlattices with period n =6 are energetically more favorable to form nonpolar interfaces. For the [001] interface, the stable nonpolar interfaces are formed by mixing 50% group-III with 50% group-II atoms or by mixing 50% group-V with 50% group-VI atoms; for the [111] nonpolar interfaces, the mixings are 25% group-III (II) and 75% group-II (III) atoms or 25% group-V (VI) and 75% group-VI (V) atoms. For all the nonpolar interfaces, the [110] interface has the lowest interfacial energy because it has the minimum number of II-V or III-VI "wrong bonds" per unit interfacial area. The interfacial energy increases when the atomic number of the elements decreases, except for the ZnO/GaN system. The band alignments between the II-VI and III-V compounds are drastically different depending on whether they have mixed-cation or mixed-anion interfaces, but the averaged values are nearly independent of the orientations. Similarly, other than ZnO/GaN, the valence-band offsets also increase as the atomic number of the elements decreases. The abnormal trends in interfacial energy and band alignment for ZnO/GaN are primarily attributed to the very short bond lengths in this system. The underlying physics behind these trends are explained.

  2. (001)-surface-induced bulk states and surface resonances in II-VI zinc-blende semiconductors

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Baquero, R.

    1995-06-01

    In a previous paper [Phys. Rev. 50, 1980 (1994)] we gave an account of the nondispersive band found experimentally at -4.4 for CdTe(001) by Niles and Höchst. We have characterized this band as a surface-induced bulk state. In a second paper we showed that a similar state does exist in II-VI and III-V zinc-blende semiconductor compounds. In this paper we show that there are more such states within the valence-band energy interval. We use tight-binding Hamiltonians and the surface-Green's-function matching method to calculate the surface resonances and surface-induced bulk states in the zinc-blende semiconductors CdTe, CdSe, ZnTe, and ZnSe. We find one distinctive surface resonance for the cation- and two for the anion-terminated (001) surface and three (001)-surface-induced bulk states with energies that correspond to the value of the heavy-hole, light-hole, and spin-orbit bands at X.

  3. Electrodeposited doped II-VI semiconductor films and devices incorporating such films

    SciTech Connect

    Ondris, M.; Picher, M.A.; Brownfield, R.E.

    1990-03-20

    This patent describes a photovoltaic device. It comprises: a first thin film of a compound semiconductor of a first conductivity type including tellurium and a metal selected from Group IIB of the Periodic Table of Elements and containing as a dopant impurity in a concentration not exceeding 10{sup 20} atoms per cubic centimeter a metal selected from Group IB, a second semiconductor thin film in contact with the first semiconductor thin film and having a second conductivity type opposite that of the first conductivity type and electrical contacts to each of the first and second semiconductor thin films. Also described is the device wherein the first thin film is p-type cadmium telluride.

  4. Photoinduced electron donor/acceptor processes in colloidal II-VI semiconductor quantum dots and nitroxide free radicals

    NASA Astrophysics Data System (ADS)

    Dutta, Poulami

    Electron transfer (ET) processes are one of the most researched topics for applications ranging from energy conversion to catalysis. An exciting variation is utilizing colloidal semiconductor nanostructures to explore such processes. Semiconductor quantum dots (QDs) are emerging as a novel class of light harvesting, emitting and charge-separation materials for applications such as solar energy conversion. Detailed knowledge of the quantitative dissociation of the photogenerated excitons and the interfacial charge- (electron/hole) transfer is essential for optimization of the overall efficiency of many such applications. Organic free radicals are the attractive counterparts for studying ET to/from QDs because these undergo single-electron transfer steps in reversible fashion. Nitroxides are an exciting class of stable organic free radicals, which have recently been demonstrated to be efficient as redox mediators in dye-sensitized solar cells, making them even more interesting for the aforementioned studies. This dissertation investigates the interaction between nitroxide free radicals TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl), 4-amino-TEMPO (4-amino- 2,2,6,6-tetramethylpiperidine-1-oxyl) and II-VI semiconductor (CdSe and CdTe) QDs. The nature of interaction in these hybrids has been examined through ground-state UV-Vis absorbance, steady state and time-resolved photoluminescence (PL) spectroscopy, transient absorbance, upconversion photoluminescence spectroscopy and electron paramagnetic resonance (EPR). The detailed analysis of the PL quenching indicates that the intrinsic charge transfer is ultrafast however, the overall quenching is still limited by the lower binding capacities and slower diffusion related kinetics. Careful analysis of the time resolved PL decay kinetics reveal that the decay rate constants are distributed and that the trap states are involved in the overall quenching process. The ultrafast hole transfer from CdSe QDs to 4-Amino TEMPO observed

  5. Thermophysical analysis of II-VI semiconductors by PPE calorimetry and lock-in thermography

    SciTech Connect

    Streza, M.; Dadarlat, D.; Strzałkowski, K.

    2013-11-13

    An accurate determination of thermophysical properties such as thermal diffusivity, thermal effusivity and thermal conductivity is extremely important for characterization and quality assurance of semiconductors. Thermal diffusivity and effusivity of some binary semiconductors have been investigated. Two experimental techniques were used: a contact technique (PPE calorimetry) and a non contact technique (lock-in thermography). When working with PPE, in the back (BPPE) configuration and in the thermally thick regim of the pyroelectric sensor, we can get the thermal diffusivity of the sample by performing a scanning of the excitation frequency of radiation. Thermal effusivity is obtained in front configuration (sensor directly irradiated and sample in back position) by performing a thickness scan of a coupling fluid. By using the lock-in thermography technique, the thermal diffusivity of the sample is obtained from the phase image. The results obtained by the two techniques are in good agreement. Nevertheless, for the determination of thermal diffusivity, lock-in thermography is preferred.

  6. Exchange couplings for Mn ions in CdTe: Validity of spin models for dilute magnetic II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Linneweber, Thorben; Bünemann, Jörg; Löw, Ute; Gebhard, Florian; Anders, Frithjof

    2017-01-01

    We employ density-functional theory (DFT) in the generalized gradient approximation (GGA) and its extensions GGA +U and GGA+Gutzwiller to calculate the magnetic exchange couplings between pairs of Mn ions substituting Cd in a CdTe crystal at very small doping. DFT(GGA) overestimates the exchange couplings by a factor of 3 because it underestimates the charge-transfer gap in Mn-doped II-VI semiconductors. Fixing the nearest-neighbor coupling J1 to its experimental value in GGA +U , in GGA+Gutzwiller, or by a simple scaling of the DFT(GGA) results provides acceptable values for the exchange couplings at second-, third-, and fourth-neighbor distances in Cd(Mn)Te, Zn(Mn)Te, Zn(Mn)Se, and Zn(Mn)S. In particular, we recover the experimentally observed relation J4>J2,J3 . The filling of the Mn 3 d shell is not integer, which puts the underlying Heisenberg description into question. However, using a few-ion toy model the picture of a slightly extended local moment emerges so that an integer 3 d -shell filling is not a prerequisite for equidistant magnetization plateaus, as seen in experiment.

  7. Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Azarov, Alexander; Galeckas, Augustinas; Wendler, Elke; Ellingsen, Josef; Monakhov, Edouard; Svensson, Bengt G.

    2017-09-01

    Post-implantation annealing is typically used to remove structural defects and electrically activate implanted dopants in semiconductors. However, ion-induced defects and their interaction with dopants in group II oxide semiconductors are not fully understood. Here, we study defect evolution in the course of annealing in CdO and ZnO materials implanted with nitrogen which is one of the most promising candidates for p-type doping. The results of photoluminescence and ion channeling measurements revealed a striking difference in defect behavior between CdO and ZnO. In particular, the defect annealing in CdO exhibits a two stage behavior, the first stage accounting for efficient removal of point defects and small defect clusters, while the second one involves gradual disappearance of extended defects where the sample decomposition can play a role. In contrast, a strong reverse annealing occurs for ZnO with a maximum defect concentration around 900 °C. This effect occurs exclusively for nitrogen ions and is attributed to efficient growth of extended defects promoted by the presence of nitrogen.

  8. II-VI semiconductor quantum dot quantum wells: a tight-binding study

    NASA Astrophysics Data System (ADS)

    Pérez-Conde, J.; Bhattacharjee, A. K.

    2006-05-01

    We have studied the electronic structure, exciton states and optical spectra of spherical semiconductor quantum dot quantum wells (QDQW's) by means of a symmetry-adapted tight-binding (TB) method. We have investigated two classes of QDQW's: CdS/HgS/CdS, based on a CdS core which acts as a barrier, with a thin HgS well layer intercalated between the core and a clad layer of CdS. The second class of QDQW's is based on ZnS cores covered with CdS layers which act in this case as a well. The calculated values of the absorption onset show a good agreement with the experimental data. Large photoluminescence Stokes shifts are also predicted.

  9. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

    NASA Astrophysics Data System (ADS)

    Wełna, M.; Kudrawiec, R.; Nabetani, Y.; Tanaka, T.; Jaquez, M.; Dubon, O. D.; Yu, K. M.; Walukiewicz, W.

    2015-08-01

    The effect of a semiconductor matrix on the band anticrossing interaction is studied for four different dilute-oxide material systems: ZnSO, ZnSeO, ZnTeO, and ZnCdTeO. The choice of host material allows for independent control of the energy separation between the conduction band edge and the O energy level as well as the coupling parameter. The transition energies measured by photoreflectance and optical absorption are well explained by the band anticrossing model with the coupling parameter increasing from 1.35 eV for ZnSO to 2.8 eV for ZnTeO and showing approximately linear dependence on the electronegativity difference between O and the host anion.

  10. Semiconductor Nanocrystal Photonics

    DTIC Science & Technology

    2005-08-31

    Hahn, H. Du, and T. D. Krauss, "Photoluminescence enhancement of colloidal semiconductor quantum dots embedded in a monolithic microcavity," Appl... DBRs ). The colloidal NC suspension was spun-coat into a 95-nm thick layer in the center of the cavity and then the other layers forming the top DBR

  11. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

    PubMed Central

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-01-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

  12. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors.

    PubMed

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-06-28

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 10(7) A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38-65 μA) and response speed (40-60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.

  13. High Resolution Triple Axis X-Ray Diffraction Analysis of II-VI Semiconductor Crystals

    NASA Technical Reports Server (NTRS)

    Volz, H. M.; Matyi, R. J.

    1999-01-01

    The objective of this research program is to develop methods of structural analysis based on high resolution triple axis X-ray diffractometry (HRTXD) and to carry out detailed studies of defect distributions in crystals grown in both microgravity and ground-based environments. HRTXD represents a modification of the widely used double axis X-ray rocking curve method for the characterization of grown-in defects in nearly perfect crystals. In a double axis rocking curve experiment, the sample is illuminated by a monochromatic X-ray beam and the diffracted intensity is recorded by a fixed, wide-open detector. The intensity diffracted by the sample is then monitored as the sample is rotated through the Bragg reflection condition. The breadth of the peak, which is often reported as the full angular width at half the maximum intensity (FWHM), is used as an indicator of the amount of defects in the sample. This work has shown that high resolution triple axis X-ray diffraction is an effective tool for characterizing the defect structure in semiconductor crystals, particularly at high defect densities. Additionally, the technique is complimentary to X-ray topography for defect characterization in crystals.

  14. Surface Chemistry and Transport Properties of II-VI Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Paudel, Pravin

    Semiconductor nanowires have been widely studied due to their unique properties such as width comparable to critical length-scales, high aspect ratio, and high carrier mobility. These unique properties make them a suitable candidate for various optical and electronic devices like photovoltaics, photodetectors, and field effect transistors. The nanowire surface plays an important role in the performance of these devices because of their high surface to volume ratio. The larger surface area of nanowires may provide better charge separation than planar heterostructures in photovoltaics by providing shorter distance to move for carrier before separation, however, presence of surface states may lead to the recombination of photo-generated carriers, limiting the amount of charge separation. In order to remove these surface states, ligands can be attached to the surface of nanowires. In this work CdS and CdSe nanowires are grown through the high temperature Vapor-Liquid-Solid (VLS) process. VLS process yields single crystalline, low defect nanowires with controllable length and diameter. In order to show ligand binding on nanowire surface, CdS nanowires were treated with a dye-labeled polymer. Fluorescence microscopy and spectroscopy were used to confirm ligand binding. Fluorescence microscopy can also be used to show the kinetics of ligand binding on nanowire surfaces. In order to control the electronic properties of the nanowire surfaces, nanowires were treated with solution phase and vapor phase reagents. Photoluminescence measurements and transport measurements were performed before and after the chemical treatment to see the consequences of ligand binding on the optical and electronic properties of nanowires.

  15. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  16. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  17. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  18. Quantum theory of electroabsorption in semiconductor nanocrystals.

    PubMed

    Tepliakov, Nikita V; Leonov, Mikhail Yu; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D

    2016-01-25

    We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of noninteracting electrons and holes in an infinitely deep quantum well and describes all the major features of electroabsorption, including the Stark effect, the Franz-Keldysh effect, and the field-induced spectral broadening. It is applicable to nanocrystals of different shapes and dimensions (quantum dots, nanorods, and nanoplatelets), and will prove useful in modeling and design of electrooptical devices based on ensembles of semiconductor nanocrystals.

  19. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  20. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. First technical progress report, 15 April 1980-30 June 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-07-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Factors limiting the short circuit current of the n-CdSe/methanol/ferro-ferricyanide system to 17.5 mA/cm/sup 2/ have been identified. The principal limiting factor is apparently specific adsorption of hexacyanoferrate species on the electrode surface which occurs at higher redox couple concentrations and slows the overall charge transfer process. Ion pairing also occurs, resulting in a low mass transport rate (smaller diffusion coefficients and increased solution viscosity), and probably enhances the degree of specific adsorption. Improvements in the performance of this system will require mitigation of the interactions between the redox species and the electrode surface, e.g., via electrolytes with reduced ion-pairing tendencies or the use of electrode surface films. Photoelectrochemically generated polypyrrole films have been shown to protect CdX photoanodes from dissolution while permitting electron exchange with the electrolyte. Current effort is directed toward improving the film adhesion and optimizing the performance characteristics.

  1. Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Su, C.-H.; Szofran, F. R.; Scripa, R. N.; Cobb, S. D.; Lehoczky, S. L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

  2. Developing New Nanoprobes from Semiconductor Nanocrystals

    SciTech Connect

    Fu, Aihua

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  3. Photoluminescent semiconductor nanocrystals for fingerprint detection.

    PubMed

    Menzel, E R; Savoy, S M; Ulvick, S J; Cheng, K H; Murdock, R H; Sudduth, M R

    2000-05-01

    The concept of utilizing photoluminescent semiconductor nanocrystals for latent fingerprint detection, especially in concert with phase-resolved imaging for background fluorescence suppression, is reduced to practice with CdS nanocrystals that are capped with dioctyl sulfosuccinate. The nanocrystals are dissolved in heptane or hexane and are applied in much the same way as staining with fluorescent dye, on articles that have been pre-fumed with cyanoacrylate ester and also on the sticky side of electrical tape without pre-fuming. Since CdS can form a photoluminescent nanocomposite with dendrimers, a feasibility examination of dendrimer tagging of fingerprints has also been conducted.

  4. Composition-tunable alloyed semiconductor nanocrystals.

    PubMed

    Regulacio, Michelle D; Han, Ming-Yong

    2010-05-18

    The ability to engineer the band gap energy of semiconductor nanocrystals has led to the development of nanomaterials with many new exciting properties and applications. Band gap engineering has thus proven to be an effective tool in the design of new nanocrystal-based semiconductor devices. As reported in numerous publications over the last three decades, tuning the size of nanocrystalline semiconductors is one way of adjusting the band gap energy. On the other hand, research on band gap engineering via control of nanocrystal composition, which is achieved by adjusting the constituent stoichiometries of alloyed semiconductors, is still in its infancy. In this Account, we summarize recent research on colloidal alloyed semiconductor nanocrystals that exhibit novel composition-tunable properties. Alloying of two semiconductors at the nanometer scale produces materials that display properties distinct not only from the properties of their bulk counterparts but also from those of their parent semiconductors. As a result, alloyed nanocrystals possess additional properties that are composition-dependent aside from the properties that emerge due to quantum confinement effects. For example, although the size-dependent emission wavelength of the widely studied CdSe nanocrystals can be continuously tuned to cover almost the entire visible spectrum, the near-infrared (NIR) region is far outside its spectral range. By contrast, certain alloy compositions of nanocrystalline CdSe(x)Te(1-x), an alloy of CdSe and CdTe, can efficiently emit light in the NIR spectral window. These NIR-emitting nanocrystals are potentially useful in several biomedical applications. In addition, highly stable nanocrystals formed by alloying CdSe with ZnSe (i.e., Zn(x)Cd(1-x)Se) emit blue light with excellent efficiency, a property seldom achieved by the parent binary systems. As a result, these materials can be used in short-wavelength optoelectronic devices. In the future, we foresee new discoveries

  5. Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles.

    PubMed

    Mukherjee, Prasun; Shade, Chad M; Yingling, Adrienne M; Lamont, Daniel N; Waldeck, David H; Petoud, Stéphane

    2011-04-28

    This work explores the sensitization of luminescent lanthanide Tb(3+) and Eu(3+) cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected while monitoring the lanthanide emission bands reveal that the ZnS nanoparticles act as an antenna for the sensitization of Tb(3+) and Eu(3+). The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semiempirical model, proposed by Dorenbos and co-workers (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417-8434; J. Lumin. 2004, 108, 301-305; J. Lumin. 2005, 111, 89-104. Dorenbos, P.; van der Kolk, E. Appl. Phys. Lett. 2006, 89, 061122-1-061122-3; Opt. Mater. 2008, 30, 1052-1057. Dorenbos, P. J. Alloys Compd. 2009, 488, 568-573; references 1-6.) to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb(3+) and Eu(3+) in ZnS nanoparticles are different; namely, Tb(3+) acts as a hole trap, whereas Eu(3+) acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II-VI semiconductor materials; namely, CdSe, CdS, and ZnSe.

  6. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    NASA Astrophysics Data System (ADS)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  7. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  8. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  9. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  10. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  11. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  12. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  13. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  14. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  15. Plasmas for controlling the synthesis of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Anthony, Rebecca

    2014-10-01

    Recently, nonthermal plasma synthesis of opto-electronically active semiconductor nanomaterials has attracted interest. The plasma reactor is especially attractive for synthesis of some earth-abundant and nontoxic semiconductor nanocrystals (NCs), such as silicon and gallium nitride. These materials, with high melting temperatures, are more challenging to grow using the liquid-phase techniques that are successful for other materials, such as II-VI NCs. Here, plasma synthesis of high-quality NCs from these materials will be discussed, including investigations on controlling the NCs' light emission properties via physical changes in the NCs brought about by altering the plasma parameters. For example, nanoparticle crystallinity may be controlled by altering the power supplied to the plasma reactor, which has been revealed to influence both the density of atomic hydrogen and the ion density in the plasma. In addition, the surfaces of NCs (which have been shown to be crucial in determining NC luminescence properties) can be altered utilizing reactions that take place in the plasma after NC growth is finished. The features of the plasma reactor provide unique and selective control over the properties of NCs, and also allow for deposition of dense films of NCs directly from the gas-phase, in complete avoidance of liquid-phase methods. These features - crystallization of environmentally benign materials, capacity to control NC surfaces via plasma-intiated reactions, and direct deposition of these materials onto device substrates - unite in a method for ``green'' processing of nanomaterials. Future directions for utilizing plasma reactors for nanomaterials synthesis and processing will also be discussed.

  16. Exciton polarizability in semiconductor nanocrystals.

    PubMed

    Wang, Feng; Shan, Jie; Islam, Mohammad A; Herman, Irving P; Bonn, Mischa; Heinz, Tony F

    2006-11-01

    The response of charge to externally applied electric fields is an important basic property of any material system, as well as one critical for many applications. Here, we examine the behaviour and dynamics of charges fully confined on the nanometre length scale. This is accomplished using CdSe nanocrystals of controlled radius (1-2.5 nm) as prototype quantum systems. Individual electron-hole pairs are created at room temperature within these structures by photoexcitation and are probed by terahertz (THz) electromagnetic pulses. The electronic response is found to be instantaneous even for THz frequencies, in contrast to the behaviour reported in related measurements for larger nanocrystals and nanocrystal assemblies. The measured polarizability of an electron-hole pair (exciton) amounts to approximately 10(4) A(3) and scales approximately as the fourth power of the nanocrystal radius. This size dependence and the instantaneous response reflect the presence of well-separated electronic energy levels induced in the system by strong quantum-confinement effects.

  17. General synthetic approach to heterostructured nanocrystals based on noble metals and I-VI, II-VI, and I-III-VI metal chalcogenides.

    PubMed

    Liu, Minghui; Zeng, Hua Chun

    2014-08-19

    Solid metal precursors (alloys or monometals) can serve both as a starting template and as a source material for chemical transformation to metal chalcogenides. Herein, we develop a simple solution-based strategy to obtain highly monodisperse noble-metal-based heterostructured nanocrystals from such precursor seeds. By utilizing chemical and structural inhomogeneity of these metal seeds, in this work, we have synthesized a total of five I-VI (Ag2S, Ag2Se, Ag3AuS2, Ag3AuSe2, and Cu9S5), three II-VI (CdS, CdSe, and CuSe), and four I-III-VI (AgInS2, AgInSe2, CuInS2, and CuInSe2) chalcogenides, together with their fifteen associated heterodimers (Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, Au-Ag3AuSe2, Au-AgInS2, Au-AgInSe2, Au-CdS, Au-CdSe, Ag-Ag2S, Ag-AgInS2, Au-Cu9S5, Au-CuInS2, Au-CuSe, Au-CuInSe2, and Pt-AgInS2) to affirm the process generality. Briefly, by adding elemental sulfur or selenium to AuAg alloy seeds and tuning the reaction conditions, we can readily obtain phase-pure Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, and Au-Ag3AuSe2 heterostructures. Similarly, we can also fabricate Au-AgInS2 and Au-AgInSe2 heterostructures from the AuAg seeds by adding sulfur/selenium and indium precursors. Furthermore, by partial or full conversion of Ag seeds, we can prepare both single-phase Ag chalcogenide nanocrystals and Ag-based heterostructures. To demonstrate wide applicability of this strategy, we have also synthesized Au-based binary and ternary Cu chalcogenide (Au-Cu9S5, Au-CuSe, Au-CuInS2, and Au-CuInSe2) heterostructures from alloy seeds of AuCu and Pt chalcogenides (e.g., Pt-AgInS2) from alloy seeds of PtAg. The structure and composition of the above products have been confirmed with X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and energy-dispersive X-ray spectroscopy methods. A kinetic investigation of the formation mechanism of these heterostructures is brought forward using Au-AgInS2 and Ag-CuInS2 as model examples.

  18. Preparation of II-VI semiconductor nanocrystallites in a glass matrix using chalcogenizing agent: Application to CdSe

    SciTech Connect

    Marc, J.L.; Granier, W.; Pradel, A.; Ribes, M.; Richard, T.; Allegre, J.; Lefebvre, P.

    1994-12-31

    A new route for preparing CdX (X = S, Se, Te, S+Se) nanocrystallites dispersed in a sodium borosilicate glass matrix from a hydrogel is proposed. Chalcogenizing complexing molecules -- for instance a mixture of NH{sub 4}SCN + H{sub 2}SeO{sub 3} -- introduced in the starting solution allowed an in situ crystallite preparation concomitant to gel densification. Prevention of crystallite oxidation is thus obtained. Moreover, coalescence is minimized because of the low gel-glass transition temperature. Low temperature absorption spectra have been interpreted in terms of exciton and electron-hole confinements, accounting for both an intrinsic broadening of energy states inside each nanocrystal and a Gaussian size distribution. Crystallite sizes and size dispersion can be adjusted by changing the initial Cd concentration. The crystallinity of the nanoparticles without change in dispersion is strongly improved by thermal treatment above the T{sub g} of the glass matrix.

  19. The structure and morphology of semiconductor nanocrystals

    SciTech Connect

    Kadavanich, Andreas V.

    1997-11-01

    Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group).

  20. Charge transport in semiconductor nanocrystal quantum dots

    NASA Astrophysics Data System (ADS)

    Mentzel, Tamar Shoshana

    In this thesis, we study charge transport in arrays of semiconductor nanocrystal quantum dots. Nanocrystals are synthesized in solution, and an organic ligand on the surface of the nanocrystal creates a potential barrier that confines charges in the nanocrystal. Optical absorption measurements reveal discrete electronic energy levels in the nanocrystals resulting from quantum confinement. When nanocrystals are deposited on a surface, they self-assemble into a close-packed array forming a nanocrystal solid. We report electrical transport measurements of a PbSe nanocrystal solid that serves as the channel of an inverted field-effect transistor. We measure the conductance as a function of temperature, source-drain bias and. gate voltage. The data indicates that holes are the majority carriers; the Fermi energy lies in impurity states in the bandgap of the nanocrystal; and charges hop between the highest occupied valence state in the nanocrystals (the 1S h states). At low source-drain voltages, the activation energy for hopping is given by the energy required to generate holes in the 1Sh state plus activation over barriers resulting from site disorder. The barriers from site disorder are eliminated with a sufficiently high source-drain bias. From the gate effect, we extract the Thomas-Fermi screening length and a density of states that is consistent with the estimated value. We consider variable-range hopping as an alternative model, and find no self-consistent evidence for it. Next, we employ charge sensing as an alternative to current measurements for studying transport in materials with localized sites. A narrow-channel MOSFET serves as a charge sensor because its conductance is sensitive to potential fluctuations in the nearby environment caused by the motion of charge. In particular, it is sensitive to the fluctuation of single electrons at the silicon-oxide interface within the MOSFET. We pattern a strip of amorphous germanium within 100 nm of the transistor. The

  1. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  2. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    PubMed

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  3. Pressure Induced Phase Transition (B3-B1) and Elastic Properties of II-Vi ZnSe Semiconductors

    NASA Astrophysics Data System (ADS)

    Varshney, Dinesh

    2012-07-01

    We evolve an effective interionic interaction potential (EIoIP) to investigate the pressure induced phase transitions from Zinc blende (B3) to Rocksalt (B1) structure in ZnSe semiconductor. The developed potential consists of the long-range Coulomb and three-body interactions (TBI) and the Hafemeister and Flygare type short-range (SR) overlap repulsion extended upto the second neighbor ions and the van der Waals (vdW) interaction. The three-body interactions arise from the electron-shell deformation when the nearest-neighbor ions overlap and has been employed for detailed studies of pressure-induced phase-transition behavior of ZnSe semiconductors. Our calculated value of the phase transition pressure (Pt) is higher and the magnitude of the discontinuity in volume at the transition pressure is consistent with reported data. The variation of second-order elastic constants with pressure resembles that observed in some binary semiconductors. It is inferred that the vdW interaction is effective in obtaining the Debye temperature, Gruneisen parameter, thermal expansion coefficient and compressibility. It is argued that the model with TBI (model II) has yielded somewhat more realistic predictions of the phase-transition and high-pressure behavior as compared to usual two-body potentials (model I) based on phenomenological approach.

  4. Nanocrystal doped matrixes

    DOEpatents

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  5. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  6. An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II-VI multilayer nanostructures

    SciTech Connect

    Zverev, M. M.; Gamov, N. A.; Peregoudov, D. V.; Studionov, V. B.; Zdanova, E. V.; Sedova, I. V. Gronin, S. V.; Sorokin, S. V.; Ivanov, S. V.; Kop'ev, P. S.

    2008-12-15

    Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser's active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of {approx}0.65 {mu}m. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of {approx}8.5% are attained for the electron-beam energy of 23 keV.

  7. Synthesis and Characterization of Mixed III-V and II-VI Semiconductor Monomers Included in the Borate Sodalite Analogue

    DTIC Science & Technology

    1993-04-30

    Characterization of Mixed III-V and .I-VI N00014-k0-J-er59Semiconductor Monomrers Included in the Borate Sodalite Analogue ..... C LL AU N.𔃾 K.L. Moran...dependent static and magic angle spinning and solid state NMR experiments. Inclusion of GaP within the borate sodalite analogue results in the formation of an...properties of compounds can be dramatically altered by inclusion into the sodalite framework, which is one of several reasons why this zeolite structure

  8. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity.

  9. Multiexciton fluorescence from semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Fisher, Brent; Caruge, Jean-Michel; Chan, Yin-Thai; Halpert, Jonathan; Bawendi, Moungi G.

    2005-11-01

    We use transient photoluminescence to spectrally resolve the emission from 1, 2, and 3 electron-hole pairs states in CdSe colloidal nanocrystals with radii ranging between 2.3 and 5.2 nm. Temporally and spectrally resolved multiexciton emission from single NCs is also observed. The observation of multiexciton emission enables new experiments and potential applications at both the single NC level and using ensembles of NCs. First we discuss the use of single CdSe(CdZnS) core(shell) colloidal NCs (spheres and rods) to generate triggered photon pair emission at room temperature, with specific ordering of the pair's constituent photons. Second, we incorporate CdSe/ZnS core-shell nanocrystals into a TiO 2 host matrix and observe simultaneous two-state amplified spontaneous emission and lasing from both multiexcitonic transitions (1S 3/2-1S e and 1P 3/2-1P e) in a surface-emitting distributed feedback CdSe NC laser. From our data we deduce radiative lifetimes, quantum yields, stimulated emission gain, and power dependencies for the multiexciton transitions.

  10. Radiation-enhanced thermal diffusion of transition metal and rare earth ions into II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Martinez, Alán.; Williams, Lamario; Gafarov, Ozarfar; Martyshkin, Dmitry; Fedorov, Vladimir; Mirov, Sergey

    2015-02-01

    We report on study of gamma radiation-enhanced thermal diffusion of Transition Metal and Rare Earth ions into IIVI semiconductor crystals. ZnSe and ZnS samples with of iron thin film deposited on one facet were sealed in evacuated quartz ampoules at 10-3 Torr. The crystals were annealed for 14 days at 950°C under γ-irradiation from 60Co source. The irradiation dose rates of 43.99 R/s, 1.81 R/s were varied by distance between 60Co source and furnaces. For comparison, the samples were also annealed without irradiation at the same temperature. The spatial distributions of transition metal were measured by absorption of focused laser radiation at 5T2-5E mid-IR transitions of iron ions. In addition, samples of ZnSe were similarly sealed in evacuated quartz ampoules in the presence of Praseodymium metal and annealed at 950°C under 43.99 R/s and 0 R/s and the diffusion lengths and Pr concentrations were compared. The γ-irradiation results in better intrusion of the iron ions from the metal film and increase of the diffusion length at ~25%, while Praseodymium diffusion is dramatically enhanced by γ-irradiation during the annealing process.

  11. Electronic structure of defects in III-VI and II-VI semiconductors and novel ytterbium-based intermetallics

    NASA Astrophysics Data System (ADS)

    Rak, Zsolt

    In recent years there has been a revival of interest in the III-VI family of semiconductors (GaS, GaSe, GaTe and InSe) due to their exciting nonlinear optical properties and their possible application in detector devices. These materials crystallize in layered crystal structure and their physical properties display a quasi two-dimensional character. An important characteristic of these systems is the existence of Ga-Ga (or In-In) dimers. It is well known that defects control the physical properties of semiconductors. In this thesis, we have carried out electronic structure calculations to study the nature of defect states in these materials. The defects we have studied include substitutional impurities at the cation and the anion sites as well as cationic and anionic vacancies. The failure of the hydrogenic effective mass approximation (EMA) to reproduce the experimental binding energies for the substitutional Cd and Sn defect states in GaSe, indicates the presence of large central cell corrections and the necessity of incorporating short range interactions in the calculation of defect binding energy. This has been done using a supercell model and self-consistent ab initio electronic structure method within density functional theory (DFT), which is known to be quite successful in tackling the problem of defects in semiconductors. Analyzing the defects from first-principles, we have been able to explain the detailed microscopic mechanism of the formation of Ga-site defects in GaSe and GaTe. When Ga is replaced by an impurity or when it is removed from the system to create a vacancy, the Ga dimer states can be strongly perturbed and this perturbation can give rise to defect states in the band gap. Defect formation energy calculations, based on total energy differences between the pure and defect containing systems, can give valuable insight into the solubility of different impurities in a host compound. The formation energies of Ge and Sn impurities reveal that under

  12. Femtosecond studies of photoinduced electron dynamics in colloidal quantum-confined II-VI semiconductor nanoparticles: CdS, CdSe and CdZnS

    NASA Astrophysics Data System (ADS)

    Roberti, Trevor

    A variety of synthetic and spectroscopic techniques have been applied to elucidate photoinduced charge carrier processes in II-VI semiconductor quantum dots. These semiconductor nanoparticles exhibit both size-dependent optical tuning due to the quantum-confinement effect and power-dependent absorption, bleach and emission characteristics. Although the tunable-absorption has been well characterized, the subsequent trapping and recombination processes are still under much investigation and are the subject of this dissertation. Particles with vastly differing surfaces, sizes, energetics and solvents have been characterized using various spectroscopic techniques in unison. The primary technique was transient femtosecond near-IR absorption, which was used to characterize charge carrier processes on the subpicosecond and picosecond time scales. UV-visible spectroscopy was used to characterize the size of the particles. Static fluorescence measurements were used to characterize the surface of the particles and the relative amount of radiative recombination. Nanosecond fluorescence measurements were also used to assist in the assignment of the fast, power-dependent near-IR absorption decay. The research reported here makes two fundamental contributions to the photophysics of semiconductor nanoparticles. First, the power-dependent, few picosecond decay process has primarily been assigned to electron-hole recombination via exciton-exciton annihilation. As the power increases, higher order, Auger processes may also arise. The exciton-exciton annihilation mechanism was primarily deduced based on power-dependent fluorescence measurements which exhibited the formation of short-lived exciton fluorescence at high powers. Secondly, many nanoparticle properties and environments were varied in order to better understand the observed picosecond processes and the effect of variations on these processes. The systems studied ranged from aqueous acidic and basic quantum dots of differing

  13. Photocatalytic Solar Fuel Generation on Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Feldmann, Jochen

    2015-03-01

    I will review our scientific work on photocatalytic solar fuel generation utilizing colloidal semiconductor nanocrystals decorated with catalytic metal clusters. In particular, nanocrystals made of CdS, TiO2 and organo-metal halide perovskites will be discussed. Key issues are the role of hole scavangers (M. Berr et al., Appl. Phys. Lett. 100, 223903 (2012)), the size and density of catalytic clusters (M. Berr et al.: Appl. Phys. Lett. 97, 093108 (2010) and Nano Letters 12, 5903 (2012) , and dependencies on external parameters such as pH (T. Simon et al., Nature Mat. 13, 1013 (2014)). Financially supported by the Bavarian Research Cluster ``Solar Technologies Go Hybrid: SolTech''.

  14. Scaling of multiexciton lifetimes in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Klimov, V. I.; McGuire, J. A.; Schaller, R. D.; Rupasov, V. I.

    2008-05-01

    Ultrafast multiexciton decay via Auger recombination is a major impediment for prospective applications of semiconductor nanocrystals (NCs) in lasing and solar cells enabled by carrier multiplication. One important unexplored aspect of Auger recombination is the scaling of multiexciton lifetimes with the number of excitons per NC. To address this question, we analyze multiexciton dynamics in PbSe and CdSe NCs. We observe that these two systems show a distinct difference in scaling of multiexciton lifetimes, which can be explained in terms of a difference in symmetries of high-order multiexcitons resulting from significant disparity in degeneracies of the lowest-energy quantized states.

  15. Enantioselective cellular uptake of chiral semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Martynenko, I. V.; Kuznetsova, V. A.; Litvinov, I. K.; Orlova, A. O.; Maslov, V. G.; Fedorov, A. V.; Dubavik, A.; Purcell-Milton, F.; Gun'ko, Yu K.; Baranov, A. V.

    2016-02-01

    The influence of the chirality of semiconductor nanocrystals, CdSe/ZnS quantum dots (QDs) capped with L- and D-cysteine, on the efficiency of their uptake by living Ehrlich Ascite carcinoma cells is studied by spectral- and time-resolved fluorescence microspectroscopy. We report an evident enantioselective process where cellular uptake of the L-Cys QDs is almost twice as effective as that of the D-Cys QDs. This finding paves the way for the creation of novel approaches to control the biological properties and behavior of nanomaterials in living cells.

  16. Enantioselective cellular uptake of chiral semiconductor nanocrystals.

    PubMed

    Martynenko, I V; Kuznetsova, V A; Litvinov, I K; Orlova, A O; Maslov, V G; Fedorov, A V; Dubavik, A; Purcell-Milton, F; Gun'ko, Yu K; Baranov, A V

    2016-02-19

    The influence of the chirality of semiconductor nanocrystals, CdSe/ZnS quantum dots (QDs) capped with L- and D-cysteine, on the efficiency of their uptake by living Ehrlich Ascite carcinoma cells is studied by spectral- and time-resolved fluorescence microspectroscopy. We report an evident enantioselective process where cellular uptake of the L-Cys QDs is almost twice as effective as that of the D-Cys QDs. This finding paves the way for the creation of novel approaches to control the biological properties and behavior of nanomaterials in living cells.

  17. Semiconductor nanocrystals for novel optical applications

    NASA Astrophysics Data System (ADS)

    Moon, Jong-Sik

    Inspired by the promise of enhanced spectral response, photorefractive polymeric composites photosensitized with semiconductor nanocrystals have emerged as an important class of materials. Here, we report on the photosensitization of photorefractive polymeric composites at visible wavelengths through the inclusion of narrow band-gap semiconductor nanocrystals composed of PbS. Through this approach, internal diffraction efficiencies in excess of 82%, two-beam-coupling gain coefficients in excess of 211 cm-1, and response times 34 ms have been observed, representing some of the best figures-of-merit reported on this class of materials. In addition to providing efficient photosensitization, however, extensive studies of these hybrid composites have indicated that the inclusion of nanocrystals also provides an enhancement in the charge-carrier mobility and subsequent reduction in the photorefractive response time. Through this approach with PbS as charge-carrier, unprecedented response times of 399 micros were observed, opening the door for video and other high-speed applications. It is further demonstrated that this improvement in response time occurs with little sacrifice in photorefractive efficiency and with internal diffraction efficiencies of 72% and two- beam-coupling gain coefficients of 500 cm-1 being measured. A thorough analysis of the experimental data is presented, supporting the hypothesized mechanism of the enhanced charge mobility without the accompaniment of superfluous traps. Finally, water soluble InP/ZnS and CdSe/ZnS quantum dots interacted with CPP and Herceptin to apply them as a bio-maker. Both of quantum dots showed the excellent potential for use in biomedical imaging and drug delivery applications. It is anticipated that these approaches can play a significant role in the eventual commercialization of these classes of materials.

  18. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  19. Spectroscopy of intraband optical transitions in anisotropic semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2013-09-01

    We propose a new type of optical spectroscopy of anisotropic semiconductor nanocrystals, which is based on the welldeveloped stationary pump-probe technique, where the pump and probe fields are absorbed upon, respectively, interband and intraband transitions of the nanocrystals' electronic subsystem. We develop a general theory of intraband absorption based on the density matrix formalism. This theory can be applied to study degenerate eigenstates of electrons in semiconductor nanocrystals of different shapes and dimentions. We demonstrate that the angular dependence of intraband absorption by nonspherical nanocrystals enables investigating their shape and orientation, as well as the symmetry of quantum states excited by the probe field and selection rules of electronic transitions.

  20. Luminescent Colloidal Semiconductor Nanocrystals Containing Copper: Synthesis, Photophysics, and Applications.

    PubMed

    Knowles, Kathryn E; Hartstein, Kimberly H; Kilburn, Troy B; Marchioro, Arianna; Nelson, Heidi D; Whitham, Patrick J; Gamelin, Daniel R

    2016-09-28

    Copper-doped semiconductors are classic phosphor materials that have been used in a variety of applications for many decades. Colloidal copper-doped semiconductor nanocrystals have recently attracted a great deal of interest because they combine the solution processability and spectral tunability of colloidal nanocrystals with the unique photoluminescence properties of copper-doped semiconductor phosphors. Although ternary and quaternary semiconductors containing copper, such as CuInS2 and Cu2ZnSnS4, have been studied primarily in the context of their photovoltaic applications, when synthesized as colloidal nanocrystals, these materials have photoluminescence properties that are remarkably similar to those of copper-doped semiconductor nanocrystals. This review focuses on the luminescent properties of colloidal copper-doped, copper-based, and related copper-containing semiconductor nanocrystals. Fundamental investigations into the luminescence of copper-containing colloidal nanocrystals are reviewed in the context of the well-established luminescence mechanisms of bulk copper-doped semiconductors and copper(I) molecular coordination complexes. The use of colloidal copper-containing nanocrystals in applications that take advantage of their luminescent properties, such as bioimaging, solid-state lighting, and luminescent solar concentrators, is also discussed.

  1. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  2. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    DTIC Science & Technology

    2015-08-27

    effect is present in the device. The EQE was determined by measuring the photocurrent under a 633 nm laser light confined onto the pixel under test...photodetector for visible light detection and a well- developed InSb PIN sub-photodetector for MWIR detection, which are electrically connected by a...the desire to use III-V substrates for II-VI material epitaxial growth, and the possibility of developing novel optoelectronic devices utilizing III-V

  3. Doped semiconductor nanocrystal based fluorescent cellular imaging probes.

    PubMed

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, S K; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R

    2013-06-21

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.

  4. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2008-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  5. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-20

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  6. Nonlinear optical properties of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricard, Gianpiero Banfi Vittorio Degiorgio Daniel

    1998-05-01

    This review is devoted to the description of recent experimental results concerning the nonlinear optical properties of semiconductor-doped glasses SDGs with particular emphasis on the regime in which the energy of the incident photon is smaller than the energy gap. A considerable theoretical and experimental effort has been devoted in the last 10years to the fundamental aspects of quantumconfined structures, which have properties somewhat intermediate between the bulk crystals and atoms or molecules. From this point of view, SDGs represent an easily available test system, and optical techniques have been a major diagnostic tool. Luminescence and absorption spectroscopy were extensively used to characterize the electronic states. The experiments aimed at the measurement of the real and imaginary parts of the third-order optical susceptibility of SDGs below the bandgap are described in some detail, and the results obtained with different techniques are compared. Besides the intrinsic fast nonlinearity due to bound electrons, SDGs may present a larger but much slower nonlinearity due to the free carriers generated by two-photon absorption. This implies that experiments have to be properly designed for separation of the two effects. In this article we stress the importance of a detailed structural characterization of the samples. Knowledge of the volume fraction occupied by the nanocrystals is necessary in order to derive from the experimental data the intrinsic nonlinearity and to compare it with the bulk nonlinearity. We discuss recent experiments in which the dependence of the intrinsic nonlinearity on the crystal size is derived by performing, on the samples, measurements of the real part and imaginary part of the nonlinear optical susceptibility and measurements of crystal size and volume fraction. Structural characterization is of interest also for a better understanding of the physical processes underlying the growth of crystallites in SDGs. The average size of

  7. Radiative decay rates of impurity states in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-01

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  8. Charge-tunable quantum plasmons in colloidal semiconductor nanocrystals.

    PubMed

    Schimpf, Alina M; Thakkar, Niket; Gunthardt, Carolyn E; Masiello, David J; Gamelin, Daniel R

    2014-01-28

    Nanomaterials exhibiting plasmonic optical responses are impacting sensing, information processing, catalysis, solar, and photonics technologies. Recent advances have expanded the portfolio of plasmonic nanostructures into doped semiconductor nanocrystals, which allow dynamic manipulation of carrier densities. Once interpreted as intraband single-electron transitions, the infrared absorption of doped semiconductor nanocrystals is now commonly attributed to localized surface plasmon resonances and analyzed using the classical Drude model to determine carrier densities. Here, we show that the experimental plasmon resonance energies of photodoped ZnO nanocrystals with controlled sizes and carrier densities diverge from classical Drude model predictions at small sizes, revealing quantum plasmons in these nanocrystals. A Lorentz oscillator model more adequately describes the data and illustrates a closer link between plasmon resonances and single-electron transitions in semiconductors than in metals, highlighting a fundamental contrast between these two classes of plasmonic materials.

  9. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  10. Synthesis of Doped Semiconductor Nanocrystals and Conductive Coatings

    NASA Astrophysics Data System (ADS)

    Wills, Andrew Wilke

    Semiconductor nanocrystals are an intriguing class of materials because of their size-tunable properties. This makes them promising for future optoelectronic devices such as solar cells and light emitting diodes. Realization of these devices, however, requires precise control of the flow of electricity through the particles. In bulk semiconductors, this is achieved by using materials with few unintentional defects, then intentionally adding particular defects or dopants to alter the semiconductor's electronic properties. In contrast, the addition of electrically active dopants has scarcely been demonstrated in semiconductor nanocrystals, and charge transport is hindered by the barrier of electron hopping between particles. The goal of this thesis, therefore, is to discover new methods to control charge transport in nanocrystals. It divides into three major thrusts: 1) the investigation of the doping process in semiconductor nanocrystals, 2) the invention of new synthetic methods to incorporate electrically active dopants into semiconductor nanocrystals, and 3) the invention of a new nanocrystal surface coating that aids processing of nanocrystals into devices but can be removed to enhance charge transport between particles. The first objective is achieved by the comparison of four different precursors that have been used to dope Mn into nanocrystals. Experiments show that dimethylmanganese incorporates efficiently into ZnSe nanocrystals while other precursors are less efficient and sometimes lower the quality of the nanocrystals produced. The second goal is met by the application of a core-shell synthetic strategy to the incorporation of non-isovalent impurities (Al and In) into CdSe nanocrystals. By separating the three steps of nucleation, dopant binding, and growth, each step can be optimized so that doping is achieved and high quality particles are produced. Detailed characterization shows dopant incorporation and local environment, while transistor

  11. Plasma-produced nanocrystals enable new insights in semiconductor physics

    NASA Astrophysics Data System (ADS)

    Greenberg, Benjamin; Robinson, Zachary; Gorynski, Claudia; Voigt, Bryan; Francis, Lorraine; Aydil, Eray; Kortshagen, Uwe

    2016-09-01

    The transition from semiconducting (insulating) to metallic behavior is a central problem of semiconductor physics. In bulk semiconductors, this insulator-to-metal transition is described by the well-known Mott criterion. However, in films of semiconductor nanocrystals the Mott criterion fails completely. Recent progress in the nonthermal plasma synthesis of films of highly doped silicon nanocrystals has contributed to the development of a new theory that presents a consistent analog to the Mott criterion for nanocrystal materials. Here, we study films of nonthermal plasma produced zinc oxide (ZnO) nanocrystals to in detail investigate the insulator-to-metal transition. We produce high-purity monodisperse ZnO nanocrystals in a nonthermal plasma and form dense films via supersonic impact deposition. We then modulate the free carrier density, n, and nanocrystal contact facet radius, ρ, via xenon-flashlamp intense pulsed light annealing, which induces necking between the clean surfaces of adjacent nanocrystals. Preliminary electrical measurements indicate that the electron mobility can be finely tuned and that the films cross the insulator-to-metal transition for sufficiently high n and ρ. This work was supported by the MRSEC program of the U.S. National Science Foundation under grant DMR-1420013.

  12. Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation

    NASA Astrophysics Data System (ADS)

    Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

    2016-07-01

    Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due

  13. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  14. Optical activity of semiconductor nanocrystals with ionic impurities

    NASA Astrophysics Data System (ADS)

    Tepliakov, N. V.; Baimuratov, A. S.; Gun'ko, Yu. K.; Baranov, A. V.; Fedorov, A. V.; Rukhlenko, I. D.

    2017-01-01

    The strength of the enantioselective interaction of chiral semiconductor nanocrystals with circularly polarized light can be varied over a wide range, which finds a series of important applications in modern nanophotonics. As a rule, this interaction is relatively weak, because the dimension of nanocrystals is much smaller than the wavelength of the optical radiation, and the optical activity of nanocrystals is rather low. In this work, we show theoretically that, by applying ion doping, one can significantly enhance the optical activity of nanocrystals and to vary its magnitude over a wide range of values and over a wide range of frequencies. We show that, by precisely arranging impurities inside nanocrystals, one can optimize the rotatory strengths of intraband transitions, making them 100 times stronger than typical rotatory strengths of small chiral molecules.

  15. Ab initio Theory of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Lin-Wang

    2007-03-01

    With blooming experimental synthesis of various nanostructures out of many semiconductor materials, there is an urgent need to calculate the electronic structures and optical properties of these nanosystems based on reliable ab initio methods. Unfortunately, due to the O(N^3) scaling of the conventional ab initio calculation methods based on the density functional theory (DFT), and the >1000 atom sizes of the most experimental nanosystems, the direct applications of these conventional ab intio methods are often difficult. Here we will present the calculated results using our O(N) scaling charge patching method (CPM) [1,2] to nanosystems up to 10,000 atoms. The CPM yields the charge density of a nanosystem by patching the charge motifs generated from small prototype systems. The CPM electron/hole eigen energies differ from the directly calculated results by only ˜10-20 meV. We will present the optical band gaps of quantum dots and wires, quantum rods, quantum dot/quantum well, and quantum dots doped with impurities. Besides good agreements with experimental measurements, we will demonstrate why it is important to perform ab initio calculations, in contrast with the continuum model k.p calculations. We will show the effects of surface polarization potentials and the internal electric fields. Finally, a linear scaling 3 dimensional fragment (LS3DF) method will be discussed. The LS3DF method can be used to calculate the total energy and atomic forces of a large nanosystem, with the results practically the same as the direct DFT method. Our work demonstrates that, with the help of supercomputers, it is now feasible to calculate the electronic structures and optical properties of >10,000 atom nanocrystals with ab initio accuracy. [1] L.W. Wang, Phys. Rev. Lett. 88, 256402 (2002). [2] J. Li, L.W. Wang, Phys. Rev. B 72, 125325 (2005).

  16. Diorganyl dichalcogenides as useful synthons for colloidal semiconductor nanocrystals.

    PubMed

    Brutchey, Richard L

    2015-11-17

    The ability to synthesize colloidal semiconductor nanocrystals in a well-controlled manner (i.e., with fine control over size, shape, size dispersion, and composition) has been mastered over the past 15 years. Much of this success stems from careful studies of precursor conversion and nanocrystal growth with respect to phosphine chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals. Despite the high level of success that has been achieved with phosphine chalcogenides, there has been a longstanding interest in exploring alternate chalcogenide precursors because of issues associated with phosphine chalcogenide cost, purity, toxicity, etc. This has resulted in a large body of literature on the use of sulfur and selenium dissolved in octadecene or amines, thio- and selenoureas, and silyl chalcogenides as alternate chalcogenide precursors for metal chalcogenide nanocrystal synthesis. In this Account, emerging work on the use of diorganyl dichalcogenides (R-E-E-R, where E = S, Se, or Te and R = alkyl, allyl, benzyl, or aryl) as alternate chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals is summarized. Among the benefits of these dichalcogenide synthons are the following: (i) they represent the first and only common precursor type that can function as chalcogen transfer reagents for each of the group VI elements (i.e., to make metal oxide, metal sulfide, metal selenide, and metal telluride nanocrystals); (ii) they possess relatively weak E-E bonds that can be readily cleaved under mild thermolytic or photolytic conditions; and (iii) the organic substituents can be tuned to affect the reactivity. These combined attributes have allowed dichalcogenide precursors to be employed for a wide range of metal chalcogenide nanocrystal syntheses, including those for In2S3, SnxGe1-xSe, SnTe, Cu2-xSySe1-y, ZnSe, CdS, CdSe, MoSe2, WSe2, BiSe, and CuFeS2. Interestingly, a number of metastable phases of compositionally complex

  17. Entropy-driven formation of binary semiconductor-nanocrystal superlattices.

    PubMed

    Evers, Wiel H; De Nijs, Bart; Filion, Laura; Castillo, Sonja; Dijkstra, Marjolein; Vanmaekelbergh, Daniel

    2010-10-13

    One of the main reasons for the current interest in colloidal nanocrystals is their propensity to form superlattices, systems in which (different) nanocrystals are in close contact in a well-ordered three-dimensional (3D) geometry resulting in novel material properties. However, the principles underlying the formation of binary nanocrystal superlattices are not well understood. Here, we present a study of the driving forces for the formation of binary nanocrystal superlattices by comparing the formed structures with full free energy calculations. The nature (metallic or semiconducting) and the size-ratio of the two nanocrystals are varied systematically. With semiconductor nanocrystals, self-organization at high temperature leads to superlattices (AlB(2), NaZn(13), MgZn(2)) in accordance with the phase diagrams for binary hard-sphere mixtures; hence entropy increase is the dominant driving force. A slight change of the conditions results in structures that are energetically stabilized. This study provides rules for the rational design of 3D nanostructured binary semiconductors, materials with promises in thermoelectrics and photovoltaics and which cannot be reached by any other technology.

  18. Photoluminescence from semiconductor cadmium selenide nanocrystals

    NASA Astrophysics Data System (ADS)

    Nazzal, Amjad Yousef

    In this dissertation, the photoluminescence (PL) emission properties from different CdSe nanocrystals (NCs) dispersed in polymer thin films were investigated. The PL spectroscopy was used as a probing tool to study core and surface-related emission properties of the CdSe NCs under investigation. The results found in these studies are promising from the point of view of fundamental understanding as well as the possible employments of the emission properties of CdSe NCs in certain technological applications. The studies presented in this dissertation include the following: (i) PL polarization spectroscopy of single CdSe NCs was performed on a system of colloidal CdSe quantum rods (QRs). Our experimental measurements suggest a strong polarization dependence of both excitation and emission, and confirm the unique linear dipole in the QRs along the long axis of the rod, i.e. the c axis of wurtzite structure, which is in agreement with the previous theoretical predictions. These results are very important because it represents an experimental test to the available theoretical models used in exploring the rich electronic spectra of these NC systems. These results also show the importance of the shape anisotropy on the electronic spectrum of NCs. (ii) Environmental effects on the PL from highly luminescent bare-core CdSe and core/shell CdSe/ZnS NCs were systematically investigated under different atmospheric environments and photo-irradiation conditions. In this study, the PL was used as a probe to detect changes in the electronic spectrum of the NCs due to photo-induced interactions on the surface of the NCs with the local surrounding atmosphere. Such studies are very important to provide a good understanding of the optimum operational conditions for emission applications of NCs in solid-state devices and also give a simple way of studying the surface of the NCs indirectly by investigating the surface interactions with different molecular systems and their effects on the

  19. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul A.

    2016-12-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  20. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2014-01-28

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  1. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2011-12-06

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  2. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2012-10-16

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  3. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon [Pinole, CA; Bruchez, Marcel [Newark, CA; Alivisatos, Paul [Oakland, CA

    2011-12-06

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  4. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2012-10-16

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  5. Methods of use of semiconductor nanocrystal probes for treating a material

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2007-04-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  6. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  7. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2004-03-02

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  8. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon [Pinole, CA; Bruchez, Marcel [Newark, CA; Alivisatos, Paul [Oakland, CA

    2011-12-20

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  9. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  10. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2002-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  11. Apparent Versus True Carrier Multiplication Yields in Semiconductor Nanocrystals

    SciTech Connect

    McGuire, John A.; Sykora, Milan; Joo, Jin; Pietryga, Jeffrey M.; Klimov, Victor I.

    2010-05-11

    Generation of multiple electron-hole pairs (excitons) by single photons, known as carrier multiplication (CM), has the potential to appreciably improve the performance of solar photovoltaics. In semiconductor nanocrystals, this effect usually has been detected using a distinct dynamical signature of multiexcitons associated with their fast Auger recombination. Here, we show that uncontrolled photocharging of the nanocrystal core can lead to exaggeration of the Auger decay component and, as a result, significant deviations of the apparent CM efficiencies from their true values. Specifically, we observe that for the same sample, apparent multiexciton yields can differ by a factor of ~3 depending on whether the nanocrystal solution is static or stirred. We show that this discrepancy is consistent with photoinduced charging of the nanocrystals in static solutions, the effect of which is minimized in the stirred case where the charged nanocrystals are swept from the excitation volume between sequential excitation pulses. Using side-by-side measurements of CM efficiencies and nanocrystal charging, we show that the CM results obtained under static conditions converge to the values measured for stirred solutions after we accurately account for the effects of photocharging. This study helps to clarify the recent controversy over CM in nanocrystals and highlights some of the issues that must be carefully considered in spectroscopic studies of this process.

  12. Coupling of Surface Plasmons and Semiconductor Nanocrystals for Nanophotonics Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Sriharsha V.

    The goal of this thesis is to engineer the interaction between surface plasmons and semiconductor nanocrystals for nanophotonic applications. Plasmonic metals support surface plasmon polaritons, hybrid photon and electron waves that propagate along a metal-dielectric interface. Unlike photons, surface plasmons can be confined in sub-diffraction geometries. This has two important consequences: 1) optical devices can be designed at the nanoscale, and 2) the high density of electromagnetic fields allows study of enhanced light-matter interactions. Surface plasmons have been exploited to demonstrate components of optoelectronic circuits, optical antennas, surface enhanced spectroscopy, enhanced fluorescence from fluorophores, and nanolasers. Despite the advances, surface plasmon losses limit their propagation lengths to tens of micrometers in the visible wavelengths, hindering many applications. Recently, the template-stripping approach was shown to fabricate metal films that exhibit larger grains and smoother surface, reducing the grain boundary and roughness scattering. To further improve the plasmonic properties, we investigate the importance of deposition conditions in the template-stripping approach. We provide insight and recipes to enhance the plasmonic performance of the most commonly used metals in the ultraviolet, visible, and near-infrared. We also explore the potential of low temperatures to improve the performance of metal films, where the electron-electron and electron-phonon scattering should be reduced. This sets a limit on the minimum loss metals can exhibit. Using this knowledge, we study the optical properties of quantum-confined semiconductor nanocrystals near metal structures. Semiconductor nanocrystals have many attractive characteristics that make them suitable for solid-state lighting and solar cells among others. Specifically, CdSe nanocrystals have been heavily studied for their large absorption and emission cross-sections, size dependent

  13. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    SciTech Connect

    Sachleben, Joseph Robert

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10-8 s-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring 14N-1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T1 and T2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  14. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    NASA Astrophysics Data System (ADS)

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  15. Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems. Materials Research Society Symposium Proceedings. Volume 161

    DTIC Science & Technology

    1990-11-21

    quantum well (MQW) structures, which can confine electrons and holes in a two-dimensional well , fabricated by MBE [2] and MOCVD [3]. Despite the...N Pie MA’ FERIA -LS - RESEAR(--’H -)CIFFY VOLUME 161 Properties of 11-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures...Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnet;-- Systems :1ity CodeS JLECTE0 Nov 15 1990 SDISTRI:7UTICN SAT EM~

  16. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  17. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  18. Recent advances in biocompatible semiconductor nanocrystals for immunobiological applications.

    PubMed

    Nanda, Sitansu Sekhar; Kim, Min Jik; Kim, Kwangmeyung; Papaefthymiou, Georgia C; Selvan, Subramanian Tamil; Yi, Dong Kee

    2017-08-25

    Quantum confinement in inorganic semiconductor nanocrystals produces brightly luminescent nanoparticles endowed with unique photo-physical properties, such as tunable optical properties. These have found widespread applications in nanotechnology. The ability to render such nanostructures biocompatible, while maintaining their tunable radiation in the visible range of the electromagnetic spectrum, renders them appropriate for bio-applications. Promising in vitro and in vivo diagnostic applications have been demonstrated, such as fluorescence-based detection of biological interactions, single molecule tracking, multiplexing and immunoassaying. In particular, these fluorescent inorganic semiconductor nanocrystals, generally known as quantum dots, have the potential of remarkable immunobiological applications. This review focuses on the current status of biocompatible quantum dots and their applications in immunobiology - immunosensing, immunofluorescent imaging and immunotherapy. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. A review on the empirical calculation of the electronic band structure of the valence band of the ideal (001) surface of the III-V and II-VI semiconductor compounds

    NASA Astrophysics Data System (ADS)

    Olguín, D.; Baquero, R.; de Coss, R.

    2012-02-01

    In our previous work we have discussed the valence band electronic band structure of a (001) oriented surface (semi-infinite medium) of some II-VI and III-V zinc-blende semiconductor compounds. For these systems, we have found three characteristic surface resonances, besides the known bulk bands (hh, lh and spin-orbit bands). Two of these resonances correspond to the anion terminated surface and the third one to the cation terminated one. We have shown, specifically, that three non dispersive (001)-surface induced bulk states, in the Γ-X direction of the 2D Brillouin zone, do exist and are characteristic of these systems. The existence of these states has been confirmed, independently, by different experimental groups. In this work, we briefly review the main characteristics of the electronic structure of the (001)-surfaces to up-date their analysis. We found that, in general, the nondispersive states occur in several, if not all, crystal surfaces, and, on general grounds, as the consequence of introducing to an infinite medium a frontier of any kind (not only the vacuum). For that reason we propose here, to name them, more appropriately as Frontier Induced Semi-Infinite Medium (FISIM) states.

  20. Modeling photoinduced fluorescence enhancement in semiconductor nanocrystal arrays

    NASA Astrophysics Data System (ADS)

    Maenosono, Shinya

    2003-07-01

    Photoinduced fluorescence enhancement (PFE) in semiconductor nanocrystal (NC) arrays is modeled based on the rate equations for ground-state, excited-state and photoionized NCs in the array. The photoionization process is broken down into fast and slow ionization processes, which are expected to relate to blinking and darkening phenomena, respectively. Consequently, PFE behavior is found to change drastically, as it depends on both the intrinsic properties of NCs, and on external conditions, such as surface-capping molecules and atmosphere.

  1. Galvanic displacement of metals on semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Johnson, Melanie; Kelly, Joel A.; Henderson, Eric J.; Veinot, Jonathan G. C.

    2009-11-01

    We report the galvanic displacement (GD) of germanium from germanium nanocrystals (Ge-NCs) with silver. The Ge-NCs are synthesized by reductive thermal processing of germanium suboxide sol-gel prepolymers. Thermal processing yields size-controlled oxide-embedded Ge-NCs, which are liberated by dissolution of the germanium oxide matrix in water. Subsequent exposure of the freestanding Ge-NCs to aqueous solutions of AgNO3 leads to deposition of silver nanostructures by GD. The resulting metal structures were analyzed by XRD, XPS, TEM and EDX, confirming deposition of elemental silver in a variety of shapes and sizes.

  2. Controlled assembly and electronics in semiconductor nanocrystal-based devices

    NASA Astrophysics Data System (ADS)

    Drndic, Marija

    2006-03-01

    I will discuss the assembly of semiconductor nanocrystals (CdSe and PbSe) into electronic devices and the basic mechanisms of charge transport in nanocrystal arrays [1-4]. Spherical CdSe nanocrystals show robust memory effects that can be exploited for memory applications [1]. Nanocrystal memory can be erased electrically or optically and is rewritable. In PbSe nanocrystal arrays, as the interdot coupling is increased, the system evolves from an insulating regime dominated by Coulomb blockade to a semiconducting regime, where hopping conduction is the dominant transport mechanism [2]. Two-dimensional CdSe nanorod arrays show striking and anomalous transport properties, including strong and reproducible non-linearities and current oscillations with dc-voltage [4]. I will also discuss imaging of the charge transport in nanocrystal-based electronic devices. Nanocrystal arrays were investigated using electrostatic force microscopy (EFM) and transmission electron microscopy (TEM) [3]. Changes in lattice and transport properties upon annealing in vacuum were revealed. Local charge transport was directly imaged by EFM and correlated to nanopatterns observed with TEM. This work shows how charge transport in complex nanocrystal networks can be identified with nm resolution [3]. This work was supported by the ONR grant N000140410489, the NSF grants DMR-0449553 and MRSEC DMR00-79909, and the ACS PRF grant 41256-G10. References:1) Fischbein M. D. and Drndic M., ``CdSe nanocrystal quantum-dot memory,'' Applied Physics Letters, 86 (19), 193106, 2005.2) H. E. Romero and Drndic M., ``Coulomb blockade and hopping conduction in PbSe quantum dots,'' Physical Review Letters 95, 156801, 2005.3) Hu Z., Fischbein M. D. and Drndic M., ``Local charge transport in two-dimensional PbSe nanocrystal arrays studied by electrostatic force microscopy",'' Nano Letters 5 (7), 1463, 2005.4) Romero H.E., Calusine G. and Drndic M., ``Current oscillations, switching and hysteresis in CdSe nanorod

  3. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  4. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  5. Amphiphilic self-assembly of semiconductor nanocrystals with heterogeneous compositions

    NASA Astrophysics Data System (ADS)

    Taniguchi, Yuki; Takishita, Takao; Kobayashi, Yusei; Arai, Noriyoshi; Kawai, Tsuyoshi; Nakashima, Takuya

    2017-06-01

    We describe herein that amphiphilic semiconductor nanocrystals (NCs) self-assembled into network structures with heterogeneous compositions. The semiconductor nanorods and tetrapods were subjected to ligand exchange with short-chained water-soluble thiolates, giving an amphiphilic surface pattern with a hydrophilic wall and hydrophobic tips. The amphiphilic NCs self-assembled through hydrophobic effects between tip-surfaces in water. The hydrophobic effect-facilitated self-assembly of NCs was well reproduced by a dissipative particle dynamics simulation. The amphiphilic self-assembly of NCs was demonstrated regardless of NC-shapes and compositions to give semiconductor NC-network structures with heterogeneous compositions. The tandem connection of luminescent core/shell nanorods demonstrated energy transfer between the nanorods in the self-assembly. Contribution to the Focus Issue Self-assemblies of Inorganic and Organic Nanomaterials edited by Marie-Paule Pileni.

  6. Two-Photon-Pumped Perovskite Semiconductor Nanocrystal Lasers.

    PubMed

    Xu, Yanqing; Chen, Qi; Zhang, Chunfeng; Wang, Rui; Wu, Hua; Zhang, Xiaoyu; Xing, Guichuan; Yu, William W; Wang, Xiaoyong; Zhang, Yu; Xiao, Min

    2016-03-23

    Two-photon-pumped lasers have been regarded as a promising strategy to achieve frequency up-conversion for situations where the condition of phase matching required by conventional approaches cannot be fulfilled. However, their practical applications have been hindered by the lack of materials holding both efficient two-photon absorption and ease of achieving population inversion. Here, we show that this challenge can be tackled by employing colloidal nanocrystals of perovskite semiconductors. We observe highly efficient two-photon absorption (with a cross section of 2.7 × 10(6) GM) in toluene solutions of CsPbBr3 nanocrystals that can excite large optical gain (>500 cm(-1)) in thin films. We have succeeded in demonstrating stable two-photon-pumped lasing at a remarkable low threshold by coupling CsPbBr3 nanocrystals with microtubule resonators. Our findings suggest perovskite nanocrystals can be used as excellent gain medium for high-performance frequency-up-conversion lasers toward practical applications.

  7. Synthesis and manipulation of semiconductor nanocrystals in microfluidic reactors

    NASA Astrophysics Data System (ADS)

    Chan, Emory Ming-Yue

    Microfluidic reactors are investigated as a mechanism to control the growth of semiconductor nanocrystals and characterize the structural evolution of colloidal quantum dots. Due to their short diffusion lengths, low thermal masses, and predictable fluid dynamics, microfluidic devices can be used to quickly and reproducibly alter reaction conditions such as concentration, temperature, and reaction time, while allowing for rapid reagent mixing and product characterization. These features are particularly useful for colloidal nanocrystal reactions, which scale poorly and are difficult to control and characterize in bulk fluids. To demonstrate the capabilities of nanoparticle microreactors, a size series of spherical CdSe nanocrystals was synthesized at high temperature in a continuous-flow, microfabricated glass reactor. Nanocrystal diameters are reproducibly controlled by systematically altering reaction parameters such as the temperature, concentration, and reaction time. Microreactors with finer control over temperature and reagent mixing were designed to synthesize nanoparticles of different shapes, such as rods, tetrapods, and hollow shells. The two major challenges observed with continuous flow reactors are the deposition of particles on channel walls and the broad distribution of residence times that result from laminar flow. To alleviate these problems, I designed and fabricated liquid-liquid segmented flow microreactors in which the reaction precursors are encapsulated in flowing droplets suspended in an immiscible carrier fluid. The synthesis of CdSe nanocrystals in such microreactors exhibited reduced deposition and residence time distributions while enabling the rapid screening a series of samples isolated in nL droplets. Microfluidic reactors were also designed to modify the composition of existing nanocrystals and characterize the kinetics of such reactions. The millisecond kinetics of the CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured

  8. Recent Advances in Understanding Delayed Photoluminescence in Colloidal Semiconductor Nanocrystals.

    PubMed

    Marchioro, Arianna

    2017-02-22

    Colloidal semiconductor nanocrystals display remarkably bright, strongly size-dependent photoluminescence properties. Following photoexcitation of these materials, temporary charge carrier separation can occur where one or both charge carriers are trapped. Charge detrapping can reform the emissive state on long time scales up to seconds, causing delayed luminescence. This delayed luminescence has not yet been thoroughly explored, and appears to be closely associated with a phenomenon observed at the single particle level, i.e. photoluminescence intermittency (blinking). Here, some of our recent work on the delayed luminescence properties of nanocrystals of different chemical composition is reviewed. These results provide insight into the mechanism of carrier detrapping, and are discussed in the context of photoluminescence blinking.

  9. Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    1999-01-01

    A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

  10. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations

    SciTech Connect

    Sadtler, Bryce F

    2009-05-01

    Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or

  11. Controlling Carrier Dynamics using Quantum-Confined Semiconductor Nanocrystals

    SciTech Connect

    Beard, Matthew C.; Klimov, Victor I.

    2016-06-01

    The articles included in this special issue of Chemical Physics explore the use of quantum-confined semiconductor nanocrystals to control the flow of energy and/or charge. Colloidal quantum-confined semiconductor nanostructures are an emerging class of functional materials being developed for novel opto-electronic applications. In the last few years numerous examples in the literature have emerged where novel nanostructures have been tailored such as to achieve a specific function thus moving the field from the stage of discovery of novel behaviors to that of control of nanostructure properties. In addition to the internal structure of the NCs their assemblies can be tailored to achieve emergent properties and add additional control parameters that determine the final opto-electronic properties. These principles are explored via variations in shape, size, surface ligands, heterostructuring, morphology, composition, and assemblies and are demonstrated through measurements of excited state processes, such as Auger recombination; photoluminescence; charge separation and charge transport.

  12. Mapping the exciton diffusion in semiconductor nanocrystal solids.

    PubMed

    Kholmicheva, Natalia; Moroz, Pavel; Bastola, Ebin; Razgoniaeva, Natalia; Bocanegra, Jesus; Shaughnessy, Martin; Porach, Zack; Khon, Dmitriy; Zamkov, Mikhail

    2015-03-24

    Colloidal nanocrystal solids represent an emerging class of functional materials that hold strong promise for device applications. The macroscopic properties of these disordered assemblies are determined by complex trajectories of exciton diffusion processes, which are still poorly understood. Owing to the lack of theoretical insight, experimental strategies for probing the exciton dynamics in quantum dot solids are in great demand. Here, we develop an experimental technique for mapping the motion of excitons in semiconductor nanocrystal films with a subdiffraction spatial sensitivity and a picosecond temporal resolution. This was accomplished by doping PbS nanocrystal solids with metal nanoparticles that force the exciton dissociation at known distances from their birth. The optical signature of the exciton motion was then inferred from the changes in the emission lifetime, which was mapped to the location of exciton quenching sites. By correlating the metal-metal interparticle distance in the film with corresponding changes in the emission lifetime, we could obtain important transport characteristics, including the exciton diffusion length, the number of predissociation hops, the rate of interparticle energy transfer, and the exciton diffusivity. The benefits of this approach to device applications were demonstrated through the use of two representative film morphologies featuring weak and strong interparticle coupling.

  13. Engineered semiconductor nanocrystals with enhanced carrier multiplication yields

    NASA Astrophysics Data System (ADS)

    Klimov, Victor

    2014-03-01

    Carrier multiplication (CM) is a process whereby absorption of a single photon results in multiple electron-hole pairs (excitons). This process could benefit a number of solar-energy conversion technologies, most notably photocatalysis and photovoltaics. This presentation overviews recent progress in understanding the CM process in semiconductor nanocrystals, motivated by an outstanding challenge in this field - the lack of capability to predict the CM performance of nanocrystals based on their known photophysical properties or documented parameters of parental bulk solids. Here, we present a possible solution to this problem by showing that, using biexciton Auger lifetimes and intraband relaxation rates inferred from ultrafast spectroscopic studies, we can rationalize relative changes in CM yields as a function of nanocrystal composition, size and shape. Further, guided by this model, we demonstrate a two-fold enhancement in multiexciton yields in PbSe nanorods vs. quantum dots attributed to enhanced Coulomb interactions. We also explore the control of competing intra-band cooling for increasing multiexciton production. Specifically, we design a new type of hetero-structured PbSe/CdSe quantum dots with reduced rates of intra-band relaxation and demonstrate a four-fold boost in the multiexciton yield. These studies provide useful guidelines for future efforts to achieve the ultimate, energy-conservation-defined CM efficiencies.

  14. Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors

    SciTech Connect

    Chan, Emory Ming-Yue

    2006-01-01

    Microfluidic reactors are investigated as a mechanism tocontrol the growth of semiconductor nanocrystals and characterize thestructural evolution of colloidal quantum dots. Due to their shortdiffusion lengths, low thermal masses, and predictable fluid dynamics,microfluidic devices can be used to quickly and reproducibly alterreaction conditions such as concentration, temperature, and reactiontime, while allowing for rapid reagent mixing and productcharacterization. These features are particularly useful for colloidalnanocrystal reactions, which scale poorly and are difficult to controland characterize in bulk fluids. To demonstrate the capabilities ofnanoparticle microreactors, a size series of spherical CdSe nanocrystalswas synthesized at high temperature in a continuous-flow, microfabricatedglass reactor. Nanocrystal diameters are reproducibly controlled bysystematically altering reaction parameters such as the temperature,concentration, and reaction time. Microreactors with finer control overtemperature and reagent mixing were designed to synthesize nanoparticlesof different shapes, such as rods, tetrapods, and hollow shells. The twomajor challenges observed with continuous flow reactors are thedeposition of particles on channel walls and the broad distribution ofresidence times that result from laminar flow. To alleviate theseproblems, I designed and fabricated liquid-liquid segmented flowmicroreactors in which the reaction precursors are encapsulated inflowing droplets suspended in an immiscible carrier fluid. The synthesisof CdSe nanocrystals in such microreactors exhibited reduced depositionand residence time distributions while enabling the rapid screening aseries of samples isolated in nL droplets. Microfluidic reactors werealso designed to modify the composition of existing nanocrystals andcharacterize the kinetics of such reactions. The millisecond kinetics ofthe CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured insitu with micro

  15. II-VI widegap superlattices

    NASA Astrophysics Data System (ADS)

    Taguchi, T.; Yamada, Y.; Endoh, Y.; Nozue, Y.; Mullins, J. T.; Ohno, T.; Masumoto, Y.; Takeda, S.

    We review our recent results of the excitonic properties in ZnSeZnS and Cd xZn 1-xSZnS strained-layer superlattices (SLSs). The most important physical insights in the II-VI widegap superlattices are to understand the relationship between the optical properties of quasi-two-dimensional exciton and strain because the well layer frequently receives biaxial compression or tension. The strain thus causes the significant shifts of the bandgap and splitting of the valence band. Semi-quantative calculations lead to an expectation that ZnSeZnS SLS always exhibits a type I band lineup within 100 Å thicknesses of the ZnSe well at a constant ZnS barrier width of several tens angstrom. This is in good agreement with the experimental results of exciton absorption and its luminescence excitation spectra. The Cd 0.3Zn 0.7SZnS SLSs with a range of well widths can produce intense excitonic emissions around 3.4 eV at room temperature due to the quantum confinement of excitons in the ternary CdZnS well. In order to elucidate localisation and relaxation processes of excitons, we have for the first time reported a multiple-LO-phonon emission process in the excitation spectra. The electric-field studies suggest that the concomitant decrease in intensity and the energy downshift of the exciton line may originate from the quantum confined Stark effect.

  16. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    NASA Astrophysics Data System (ADS)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  17. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    SciTech Connect

    Hamad, Kimberly Sue

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  18. Sol-gel derived precursors to Group 14 semiconductor nanocrystals - Convenient materials for enabling nanocrystal-based applications

    NASA Astrophysics Data System (ADS)

    Veinot, Jonathan G. C.; Henderson, Eric J.; Hessel, Colin M.

    2009-11-01

    Semiconductor nanocrystals are intriguing because of their electronic, optical, and chemical characteristics. Silicon nanocrystals (Si-NCs) of sub-5 nm dimension are of particular interest due to their intense photoluminescent response and the promise of linking silicon photonics and electronics. Other related nanomaterials of technological importance include SiC and Ge. The following contribution describes key experimental findings pertaining to synthetic methodology, investigation of nanodomain formation and growth, as determined by X-ray powder diffraction (XRD) and photoluminescence (PL) spectroscopy for a series of sol-gel derived prepolymers suitable for preparing Group 14 based nanocrystal containing composites.

  19. Theoretical investigation of magnetic and optical properties of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Proshchenko, Vitaly

    This thesis presents the theoretical investigation of physical properties of pure and transition metal doped semiconductor nanostructures. First we study optical and energy (the density of states) spectra for Cd mSem clusters of various sizes and shapes, such as spheres, cubes, nanorods, and nanotubes. This work requires a careful computational analysis where a proper exchange-correlation functional has to be chosen to fit the experimental data. The next part of the thesis deals with the magnetic properties of manganese doped CdSe, ZnSe, ZnS, and CdS quantum dots (QDs). We theoretically explain the effect of dual luminescence and show that in the case with CdSe quantum dots the luminescence becomes tunable by a QD size. We also study the concentration dependence of magnetic order and optical transitions in Mn doped CdSe nanocrystals. Room temperature d0 ferromagnetism is studied in ZnS quantum dots and nanowires in Chapter 4. To find the magnetization of the medium and large size nanocrystals we introduce the surface-bulk (SB) model. We show that the condensation of Zn vacancies into a single droplet takes place which leads to the week d0 ferromagnetism in ZnS nanocrystals. In the last Chapter we study electronic, optical, and charge transport properties of two new holey 2D materials, ELH-g-C2N-H and ELH-g-C2N-Br with hydrogen and bromine side-groups, respectively. Since the two 2D crystals under study have not been synthesized yet, we provide the stability analysis and prove that the calculated crystal structures correspond to the global energy minimum criterion.

  20. Biexciton quantum yield of single semiconductor nanocrystals from photon statistics

    PubMed Central

    Nair, Gautham; Zhao, Jing; Bawendi, Moungi G

    2012-01-01

    Biexciton properties strongly affect the usability of a light emitter in quantum photon sources and lasers but are difficult to measure for single fluorophores at room temperature due to luminescence intermittency and bleaching at the high excitation fluences usually required. Here, we observe the biexciton (BX) to exciton (X) to ground photoluminescence cascade of single colloidal semiconductor nanocrystals (NCs) under weak excitation in a g(2) photon correlation measurement and show that the normalized amplitude of the cascade feature is equal to the ratio of the BX to X fluorescence quantum yields. This imposes a limit on the attainable depth of photon antibunching and provides a robust means to study single emitter biexciton physics. In NC samples, we show that the BX quantum yield is considerably inhomogeneous, consistent with the defect sensitivity expected of the Auger nonradiative recombination mechanism. The method can be extended to study X,BX spectral and polarization correlations. PMID:21288042

  1. Water-soluble semiconductor nanocrystals cap exchanged with metalated ligands.

    PubMed

    Liu, Di; Snee, Preston T

    2011-01-25

    We report a novel method for cap exchange of emissive semiconductor nanocrystals (NCs) using thiol functional ligands metalated with zinc. Utilizing this method, the NCs can be several times brighter and much more resistant to precipitation compared to control samples. This method has been applied using a variety of caps such as dihydrolipoic acid and cysteine. Our data suggest that the improved properties of the metalated cap exchanged NCs are due to a ligand metathesis process occurring at the NC surface where the zinc complex reacts with NC surface bound ligands, gently removing them and replacing them with another cap. Overall, the use of metalated ligands helps resolve many long-standing issues concerning the application of small cap exchanged NCs for biological imaging.

  2. Simplistic attachment and multispectral imaging with semiconductor nanocrystals.

    PubMed

    Jennings, Travis L; Triulzi, Robert C; Tao, Guoliang; St Louis, Zachary E; Becker-Catania, Sara G

    2011-01-01

    Advances in spectral deconvolution technologies are rapidly enabling researchers to replace or enhance traditional epifluorescence microscopes with instruments capable of detecting numerous markers simultaneously in a multiplexed fashion. While significantly expediting sample throughput and elucidating sample information, this technology is limited by the spectral width of common fluorescence reporters. Semiconductor nanocrystals (NC's) are very bright, narrow band fluorescence emitters with great potential for multiplexed fluorescence detection, however the availability of NC's with facile attachment chemistries to targeting molecules has been a severe limitation to the advancement of NC technology in applications such as immunocytochemistry and immunohistochemistry. Here we report the development of simple, yet novel attachment chemistries for antibodies onto NC's and demonstrate how spectral deconvolution technology enables the multiplexed detection of 5 distinct NC-antibody conjugates with fluorescence emission wavelengths separated by as little as 20 nm.

  3. Simplistic Attachment and Multispectral Imaging with Semiconductor Nanocrystals

    PubMed Central

    Jennings, Travis L.; Triulzi, Robert C.; Tao, Guoliang; St. Louis, Zachary E.; Becker-Catania, Sara G.

    2011-01-01

    Advances in spectral deconvolution technologies are rapidly enabling researchers to replace or enhance traditional epifluorescence microscopes with instruments capable of detecting numerous markers simultaneously in a multiplexed fashion. While significantly expediting sample throughput and elucidating sample information, this technology is limited by the spectral width of common fluorescence reporters. Semiconductor nanocrystals (NC’s) are very bright, narrow band fluorescence emitters with great potential for multiplexed fluorescence detection, however the availability of NC’s with facile attachment chemistries to targeting molecules has been a severe limitation to the advancement of NC technology in applications such as immunocytochemistry and immunohistochemistry. Here we report the development of simple, yet novel attachment chemistries for antibodies onto NC’s and demonstrate how spectral deconvolution technology enables the multiplexed detection of 5 distinct NC-antibody conjugates with fluorescence emission wavelengths separated by as little as 20 nm. PMID:22346658

  4. Biexciton quantum yield of single semiconductor nanocrystals from photon statistics.

    PubMed

    Nair, Gautham; Zhao, Jing; Bawendi, Moungi G

    2011-03-09

    Biexciton properties strongly affect the usability of a light emitter in quantum photon sources and lasers but are difficult to measure for single fluorophores at room temperature due to luminescence intermittency and bleaching at the high excitation fluences usually required. Here, we observe the biexciton (BX) to exciton (X) to ground photoluminescence cascade of single colloidal semiconductor nanocrystals (NCs) under weak excitation in a g((2)) photon correlation measurement and show that the normalized amplitude of the cascade feature is equal to the ratio of the BX to X fluorescence quantum yields. This imposes a limit on the attainable depth of photon antibunching and provides a robust means to study single emitter biexciton physics. In NC samples, we show that the BX quantum yield is considerably inhomogeneous, consistent with the defect sensitivity expected of the Auger nonradiative recombination mechanism. The method can be extended to study X,BX spectral and polarization correlations.

  5. Facts and artifacts in the blinking statistics of semiconductor nanocrystals.

    PubMed

    Crouch, Catherine H; Sauter, Orion; Wu, Xiaohua; Purcell, Robert; Querner, Claudia; Drndic, Marija; Pelton, Matthew

    2010-05-12

    Since its initial discovery just over a decade ago, blinking of semiconductor nanocrystals has typically been described in terms of probability distributions for durations of bright, or "on," states and dark, or "off," states. These distributions are obtained by binning photon counts in order to construct a time series for emission intensity and then applying a threshold to distinguish on states from off states. By examining experimental data from CdSe/ZnS core/shell nanocrystals and by simulating this data according to a simple, two-state blinking model, we find that the apparent truncated power-law distributions of on times can depend significantly on the choices of binning time and threshold. For example, increasing the binning time by a factor of 10 can double the apparent truncation time and change the apparent power-law exponent by 30%, even though the binning time is only 3% of the truncation time. Our findings indicate that stringent experimental conditions are needed to accurately determine blinking-time probability distributions. Similar considerations should apply to any phenomenon characterized by time series data that displays telegraph noise.

  6. Synthetic Strategies for Semiconductor Nanocrystals Expressing Localized Surface Plasmon Resonance.

    PubMed

    Niezgoda, J Scott; Rosenthal, Sandra J

    2016-03-03

    The field of semiconductor plasmonics has grown rapidly since its outset, only roughly six years ago, and now includes many crystalline substances ranging from GeTe to wide-bandgap transition-metal oxides. One byproduct of this proliferation is the sea of differing synthetic methods to realize localized surface plasmon resonances (LSPRs) based on the studied material. Strategies vary widely from material to material, but all have the common goal of introducing extremely high carrier densities to the semiconductor system. This doping results in tunable, size-quantized, and on/off-switchable LSPR modes, which are a complete departure from traditional metal-nanoparticle-based plasmon resonances. This Minireview will provide an overview of the current state of nanocrystal and quantum-dot plasmonics and the physical basis thereof, however its main purpose is to summarize the methods for realizing LSPRs in the various syntheses and systems that have been reported to date. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    PubMed

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  8. A novel approach for the fabrication of all-inorganic nanocrystal solids: Semiconductor matrix encapsulated nanocrystal arrays

    NASA Astrophysics Data System (ADS)

    Moroz, Pavel

    Growing fossil fuels consumption compels researchers to find new alternative pathways to produce energy. Along with new materials for the conversion of different types of energy into electricity innovative methods for efficient processing of energy sources are also introduced. The main criteria for the success of such materials and methods are the low cost and compelling performance. Among different types of materials semiconductor nanocrystals are considered as promising candidates for the role of the efficient and cheap absorbers for solar energy applications. In addition to the anticipated cost reduction, the integration of nanocrystals (NC) into device architectures is inspired by the possibility of tuning the energy of electrical charges in NCs via nanoparticle size. However, the stability of nanocrystals in photovoltaic devices is limited by the stability of organic ligands which passivate the surface of semiconductors to preserve quantum confinement. The present work introduces a new strategy for low-temperature processing of colloidal nanocrystals into all-inorganic films: semiconductor matrix encapsulated nanocrystal arrays (SMENA). This methodology goes beyond the traditional ligand-interlinking scheme and relies on the encapsulation of morphologically-defined nanocrystal arrays into a matrix of a wide-band gap semiconductor, which preserves optoelectronic properties of individual nanoparticles. Fabricated solids exhibit excellent thermal stability, which is attributed to the heteroepitaxial structure of nanocrystal-matrix interfaces. The main characteristics and properties of these solids were investigated and compared with ones of traditionally fabricated nanocrystal films using standard spectroscopic, optoelectronic and electronic techniques. As a proof of concept, we. We also characterized electron transport phenomena in different types of nanocrystal films using all-optical approach. By measuring excited carrier lifetimes in either ligand-linked or

  9. Activation of shallow dopants in II-VI compounds

    SciTech Connect

    Walukiewicz, W.

    1995-08-01

    The amphoteric native defect model is applied to the understanding of the variations in the dopant activation efficiency in II-VI compounds. It is shown that the location of the common energy reference, the Fermi level stabilization energy, relative to the band edges can be used to determine the doping induced reduction of the formation energy and the enhancement of the concentration of compensating native defects. The model is applied to the most extensively studied compound semiconductors as well as to ternary and quaternary alloys. The effects of the compound ionicity on the dopant activation are briefly discussed.

  10. Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots

    SciTech Connect

    Zhu, J.G.; White, C.W.; Withrow, S.P.

    1996-11-01

    Nanocrystals of semiconductor materials have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. Strong red photoluminescence (PL) peaked around 750 nm has been observed in samples containing Si nanocrystals in SiO{sub 2}. The Si nanocrystals in the samples with optimized PL intensities are a few nanometers in diameter. Difference in the absorption bandgap energies and the PL peak energies are discussed. Significant influence of implantation sequence on the formation of compound semiconductor nanocrystals are demonstrated with the GaAs in the SiO{sub 2} system. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage if Ga is implanted first. A single surface phonon mode has been observed in the infrared reflectance measurement from samples containing GaAs nanocrystals.

  11. Nanocrystals Research for Energy Efficient and Clean Energy Technologies:

    SciTech Connect

    Rosenthal, Sandra J

    2013-12-17

    Efforts centered on: nanocrystal photovoltaic fabrication, ultrafast dynamics and aberration-corrected STEM characterization of II-VI core, core/shell and alloyed nanocrystals, and fundamental investigation and applications of ultrasmall white light-emitting CdSe nanocrystal.

  12. Gas-phase synthesis of semiconductor nanocrystals and its applications

    NASA Astrophysics Data System (ADS)

    Mandal, Rajib

    Luminescent nanomaterials is a newly emerging field that provides challenges not only to fundamental research but also to innovative technology in several areas such as electronics, photonics, nanotechnology, display, lighting, biomedical engineering and environmental control. These nanomaterials come in various forms, shapes and comprises of semiconductors, metals, oxides, and inorganic and organic polymers. Most importantly, these luminescent nanomaterials can have different properties owing to their size as compared to their bulk counterparts. Here we describe the use of plasmas in synthesis, modification, and deposition of semiconductor nanomaterials for luminescence applications. Nanocrystalline silicon is widely known as an efficient and tunable optical emitter and is attracting great interest for applications in several areas. To date, however, luminescent silicon nanocrystals (NCs) have been used exclusively in traditional rigid devices. For the field to advance towards new and versatile applications for nanocrystal-based devices, there is a need to investigate whether these NCs can be used in flexible and stretchable devices. We show how the optical and structural/morphological properties of plasma-synthesized silicon nanocrystals (Si NCs) change when they are deposited on stretchable substrates made of polydimethylsiloxane (PDMS). Synthesis of these NCs was performed in a nonthermal, low-pressure gas phase plasma reactor. To our knowledge, this is the first demonstration of direct deposition of NCs onto stretchable substrates. Additionally, in order to prevent oxidation and enhance the luminescence properties, a silicon nitride shell was grown around Si NCs. We have demonstrated surface nitridation of Si NCs in a single step process using non?thermal plasma in several schemes including a novel dual-plasma synthesis/shell growth process. These coated NCs exhibit SiNx shells with composition depending on process parameters. While measurements including

  13. Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals

    SciTech Connect

    Vela-Becerra, Javier

    2013-02-01

    Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our group’s recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

  14. Engineering of Semiconductor Nanocrystals for Light Emitting Applications

    PubMed Central

    Todescato, Francesco; Fortunati, Ilaria; Minotto, Alessandro; Signorini, Raffaella; Jasieniak, Jacek J.; Bozio, Renato

    2016-01-01

    Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs) provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies. PMID:28773794

  15. Effect of surface modification on semiconductor nanocrystal fluorescence lifetime.

    PubMed

    Ruedas-Rama, Maria J; Orte, Angel; Hall, Elizabeth A H; Alvarez-Pez, Jose M; Talavera, Eva M

    2011-04-04

    Semiconductor nanocrystals, namely, quantum dots (QDs), present a set of unique photoluminescence properties, which has led to increased interest in using them as advantageous alternatives to conventional organic dyes. Many applications of QDs involve surface modification to enhance the solubility or biocompatibility of the QDs. One of the least exploited properties of QDs is the very long photoluminescence lifetime that usually has complex kinetics owing to the effect of quantum confinement. Herein, we describe the effect of different surface modifications on the photoluminescence decay kinetics of QDs. The different surface modifications were carefully chosen to provide lipophilic or water-soluble QDs with either positive or negative surface net charges. We also survey the effect on the QD lifetime of several ligands that interact with the QD surface, such as organic chromophores or fluorescent proteins. The results obtained demonstrate that time-resolved fluorescence is a useful tool for QD-based sensing to set the basis for the development of time-resolved-based nanosensors.

  16. Response of semiconductor nanocrystals to extremely energetic excitation.

    PubMed

    Padilha, Lazaro A; Bae, Wan K; Klimov, Victor I; Pietryga, Jeffrey M; Schaller, Richard D

    2013-03-13

    Using a combination of transient photoluminescence and transient cathodoluminescence (trCL) we, for the first time, identify and quantify the distribution of electronic excitations in colloidal semiconductor nanocrystals (NCs) under high-energy excitation. Specifically, we compare the temporally and spectrally resolved radiative recombination produced following excitation with 3.1 eV, subpicosecond photon pulses, or with ionizing radiation in the form of 20 keV picosecond electron pulses. Using this approach, we derive excitation branching ratios produced in the scenario of energetic excitation of NCs typical of X-ray, neutron, or gamma-ray detectors. Resultant trCL spectra and dynamics for CdSe NCs indicate that all observable emission can be attributed to recombination between states within the quantum-confined nanostructure with particularly significant yields of trions and multiexcitons produced by carrier multiplication. Our observations offer direct insight into the transduction of atomic excitation into quantum-confined states within NCs, explain that the root cause of poor performance in previous scintillation studies arises from efficient nonradiative Auger recombination, and suggest routes for improved detector materials.

  17. Structure-Dependent Spin Polarization in Polymorphic CdS:Y Semiconductor Nanocrystals.

    PubMed

    Wang, Pan; Xiao, Bingxin; Zhao, Rui; Ma, Yanzhang; Zhang, Mingzhe

    2016-03-01

    Searching for the polymorphic semiconductor nanocrystals would provide precise and insightful structure-spin polarization correlations and meaningful guidance for designing and synthesizing high spin-polarized spintronic materials. Herein, the high spin polarization is achieved in polymorphic CdS:Y semiconductor nanocrystals. The high-pressure polymorph of rock-salt CdS:Y nanocrystals has been recovered at ambient conditions synthesized by the wurtzite CdS:Y nanocrystals as starting material under 5.2 GPa and 300 °C conditions. The rock-salt CdS:Y polymorph displays more robust room-temperature ferromagnetism than wurtzite sample, which can reach the ferromagnetic level of conventional semiconductors doped with magnetic transition-metal ions, mainly due to the significantly enhanced spin configuration and defect states. Therefore, crystal structure directly governs the spin configuration, which determines the degree of spin polarization. This work can provide experimental and theoretical methods for designing the high spin-polarized semiconductor nanocrystals, which is important for applications in semiconductor spintronics.

  18. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials.

    PubMed

    Reiss, Peter; Carrière, Marie; Lincheneau, Christophe; Vaure, Louis; Tamang, Sudarsan

    2016-09-28

    We review the synthesis of semiconductor nanocrystals/colloidal quantum dots in organic solvents with special emphasis on earth-abundant and toxic heavy metal free compounds. Following the Introduction, section 2 defines the terms related to the toxicity of nanocrystals and gives a comprehensive overview on toxicity studies concerning all types of quantum dots. Section 3 aims at providing the reader with the basic concepts of nanocrystal synthesis. It starts with the concepts currently used to describe the nucleation and growth of monodisperse particles and next takes a closer look at the chemistry of the inorganic core and its interactions with surface ligands. Section 4 reviews in more detail the synthesis of different families of semiconductor nanocrystals, namely elemental group IV compounds (carbon nanodots, Si, Ge), III-V compounds (e.g., InP, InAs), and binary and multinary metal chalcogenides. Finally, the authors' view on the perspectives in this field is given.

  19. Nanocrystal structures

    DOEpatents

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2006-12-19

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  20. Effective optical Faraday rotations of semiconductor EuS nanocrystals with paramagnetic transition-metal ions.

    PubMed

    Hasegawa, Yasuchika; Maeda, Masashi; Nakanishi, Takayuki; Doi, Yoshihiro; Hinatsu, Yukio; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji

    2013-02-20

    Novel EuS nanocrystals containing paramagnetic Mn(II), Co(II), or Fe(II) ions have been reported as advanced semiconductor materials with effective optical rotation under a magnetic field, Faraday rotation. EuS nanocrystals with transition-metal ions, EuS:M nanocrystals, were prepared by the reduction of the Eu(III) dithiocarbamate complex tetraphenylphosphonium tetrakis(diethyldithiocarbamate)europium(III) with transition-metal complexes at 300 °C. The EuS:M nanocrystals thus prepared were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), inductively coupled plasma atomic emission spectroanalysis (ICP-AES), and a superconducting quantum interference device (SQUID) magnetometer. Enhanced Faraday rotations of the EuS:M nanocrystals were observed around 550 nm, and their enhanced spin polarization was estimated using electron paramagnetic resonance (EPR) measurements. In this report, the magneto-optical relationship between the Faraday rotation efficiency and spin polarization is discussed.

  1. Semiconductor Nanocrystals Hybridized with Functional Ligands: New Composite Materials with Tunable Properties

    PubMed Central

    McDowell, Matthew; Wright, Ashley E.; Hammer, Nathan I.

    2010-01-01

    Semiconductor nanocrystals hybridized with functional ligands represent an important new class of composite nanomaterials. The development of these new nanoscale building blocks has intensified over the past few years and offer significant advantages in a wide array of applications. Functional ligands allow for incorporation of nanocrystals into areas where their unique photophysics can be exploited. Energy and charge transfer between the ligands and the nanocrystal also result in enhanced physical properties that can be tuned by the choice of ligand architecture. Here, progress in the development and applications involving this new class of composite materials will be discussed.

  2. Photosensitizer methylene blue-semiconductor nanocrystals hybrid system for photodynamic therapy.

    PubMed

    Rakovich, Aliaksandra; Rakovich, Tatsiana; Kelly, Vincent; Lesnyak, Vladimir; Eychmüller, Alexander; Rakovich, Yury P; Donegan, John F

    2010-04-01

    In this work we report on the development of novel hybrid material with enhanced photodynamic properties based on methylene blue and CdTe nanocrystals. Absorption spectroscopy, visible photoluminescence spectroscopy and fluorescence lifetime imaging of this system reveal efficient charge transfer between nanocrystals and the methylene blue dye. Near infra-red photoluminescence measurements provide evidence for an increased efficiency of singlet oxygen production by the methylene blue dye. In vitro studies on the growth of HepG2 and HeLa cancerous cells were also performed, they point towards an improvement in the cell kill efficiency for the methylene blue-semiconductor nanocrystals hybrid system.

  3. Mechanisms of fluorescence blinking in semiconductor nanocrystal quantum dots.

    PubMed

    Tang, Jau; Marcus, R A

    2005-08-01

    The light-induced spectral diffusion and fluorescence intermittency (blinking) of semiconductor nanocrystal quantum dots are investigated theoretically using a diffusion-controlled electron-transfer (DCET) model, where a light-induced one-dimensional diffusion process in energy space is considered. Unlike the conventional electron-transfer reactions with simple exponential kinetics, the model naturally leads to a power-law statistics for the intermittency. We formulate a possible explanation for the spectral broadening and its proportionality to the light energy density, the -32 power law for the blinking statistics of the fluorescence intermittency, the breakdown of the power-law behavior with a bending tail for the "light" periods, a lack of bending tail for the "dark" periods (but would eventually appear at later times), and the dependence of the bending tail on light intensity and temperature. This DCET model predicts a critical time t(c) (a function of the electronic coupling strength and other quantities), such that for times shorter than t(c) the exponent for the power law is -12 instead of -32. Quantitative analyses are made of the experimental data on spectral diffusion and on the asymmetric blinking statistics for the "on" and "off" events. Causes for deviation of the exponent from the ideal value of -32 are also discussed. Several fundamental properties are determined from the present experimental data, the diffusion correlation time, the Stokes shift, and a combination of other molecular-based quantities. Specific experiments are suggested to test the model further, extract other molecular properties, and elucidate more details of the light-induced charge-transfer dynamics in quantum dots.

  4. New aspects of carrier multiplication in semiconductor nanocrystals.

    PubMed

    McGuire, John A; Joo, Jin; Pietryga, Jeffrey M; Schaller, Richard D; Klimov, Victor I

    2008-12-01

    One consequence of strong spatial confinement of electronic wave functions in semiconductor nanocrystals (NCs) is a significant enhancement in carrier-carrier Coulomb interactions. This effect leads to a number of novel physical phenomena including ultrafast decay of multiple electron-hole pairs (multiexcitons) by Auger recombination and high-efficiency generation of mutiexcitons by single photons via carrier multiplication (CM). Significant recent interest in multiexciton phenomena in NCs has been stimulated by studies of NC lasing, as well as potential applications of CM in solar-energy conversion. The focus of this Account is on CM. In this process, the kinetic energy of a "hot" electron (or a "hot" hole) does not dissipate as heat but is, instead, transferred via the Coulomb interaction to the valence-band electron, exciting it across the energy gap. Because of restrictions imposed by energy and translational-momentum conservation, as well as rapid energy loss due to phonon emission, CM is inefficient in bulk semiconductors, particularly at energies relevant to solar energy conversion. On the other hand, the CM efficiency can potentially be enhanced in zero-dimensional NCs because of factors such as a wide separation between discrete electronic states, which inhibits phonon emission ("phonon bottleneck"), enhanced Coulomb interactions, and relaxation in translational-momentum conservation. Here, we investigate CM in PbSe NCs by applying time-resolved photoluminescence and transient absorption. Both techniques show clear signatures of CM with efficiencies that are in good agreement with each other. NCs of the same energy gap show moderate batch-to-batch variations (within approximately 30%) in apparent multiexciton yields and larger variations (more than a factor of 3) due to differences in sample conditions (stirred vs static solutions). These results indicate that NC surface properties may affect the CM process. They also point toward potential interference

  5. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    PubMed Central

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  6. Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures.

    PubMed

    Xia, Feifei; Shao, Zhibin; He, Yuanyuan; Wang, Rongbin; Wu, Xiaofeng; Jiang, Tianhao; Duhm, Steffen; Zhao, Jianwei; Lee, Shuit-Tong; Jie, Jiansheng

    2016-11-22

    Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO3, WO3, CrO3, and V2O5 as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.

  7. The interplay of shape and crystalline anisotropies in plasmonic semiconductor nanocrystals

    DOE PAGES

    Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; ...

    2016-05-16

    Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influencemore » of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. Furthermore, this new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape.« less

  8. The Interplay of Shape and Crystalline Anisotropies in Plasmonic Semiconductor Nanocrystals.

    PubMed

    Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; Bergerud, Amy; Milliron, Delia J

    2016-06-08

    Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influence of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. This new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape.

  9. Spectroscopic characterization of iron-doped II-VI compounds for laser applications

    NASA Astrophysics Data System (ADS)

    Martinez, Alan

    The middle Infrared (mid-IR) region of the electromagnetic spectrum between 2 and 15 ?m has many features which are of interest to a variety of fields such as molecular spectroscopy, biomedical applications, industrial process control, oil prospecting, free-space communication and defense-related applications. Because of this, there is a demand for broadly tunable, laser sources operating over this spectral region which can be easily and inexpensively produced. II-VI semiconductor materials doped with transition metals (TM) such as Co 2+, Cr2+, or Fe2+ exhibit highly favorable spectroscopic characteristics for mid-IR laser applications. Among these TM dopants, Fe2+ has absorption and emission which extend the farthest into the longer wavelength portion of the mid-IR. Fe2+:II-VI crystals have been utilized as gain elements in laser systems broadly tunable over the 3-5.5 microm range [1] and as saturable absorbers to Q -switch [2] and mode-lock [3] laser cavities operating over the 2.7-3 microm. TM:II-VI laser gain elements can be fabricated inexpensively by means of post-growth thermal diffusion with large homogeneous dopant concentration and good optical quality[4,5]. The work outlined in this dissertation will focus on the spectroscopic characterization of TM-doped II-VI semiconductors. This work can be categorized into three major thrusts: 1) the development of novel laser materials, 2) improving and extending applications of TM:II-VI crystals as saturable absorbers, and 3) fabrication of laser active bulk crystals. Because current laser sources based on TM:II-VI materials do not cover the entire mid-IR spectral region, it is necessary to explore novel laser sources to extend available emissions toward longer wavelengths. The first objective of this dissertation is the spectroscopic characterization of novel ternary host crystals doped with Fe2+ ions. Using crystal field engineering, laser materials can be prepared with emissions placed in spectral regions not

  10. Self-assembly and alignment of semiconductor nanoparticles on cellulose nanocrystals

    Treesearch

    Sonal Padalkar; Jeff R. Capadona; Stuart J. Rowan; Christoph Weder; Robert J. Moon; Lia A. Stanciu

    2011-01-01

    The synthesis of cadmium sulfide (CdS), zinc sulfide (ZnS), and lead sulfide (PbS) nanoparticle chains on cellulose nanocrystal (CNC) templates can be accomplished by the reaction of the precursor salts. The use of a cationic surfactant, cetyltrimethylammonium bromide (CTAB), was critical for the synthesis of well-defined semiconductor nanoparticle chains on the...

  11. Development of a novel microfluidic reactor for highly controlled synthesis of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Winterton, Jeffrey D.

    Despite numerous advancements in the understanding of the unique properties of semiconductor nanocrystals, challenges associated with current production strategies have prevented these materials from finding widespread application. Current batch-wise synthesis methods offer only limited ability to probe the processes occurring during the formation of individual nanocrystals and no synthesis method yet exists that is capable of achieving widespread production of nanocrystals. Microfluidic reaction systems present an attractive alternative to conventional synthesis techniques because they afford greater control over local reaction environments than is possible in conventional batch-wise methods, and could ultimately increase production capabilities through massive parallelization. Here, the unique challenges associated with microfluidic synthesis of semiconductor nanocrystals are discussed, along with a presentation of an innovative microfluidic reactor concept that directly addresses the limitations of conventional microfluidic reaction systems for this purpose. The reactor discussed here features a droplet-based two-phase flow design that eliminates the dispersion-induced broadening of the particle size distribution that is characteristic of other microfluidic designs. The flow channels in the design are arranged to spiral in and out of novel reaction coin structures that are designed to allow the thermal profile of the reactor to be tailored to the specific requirements of nanocrystal synthesis operations. A simplified prototype reactor has been constructed and tested to demonstrate the feasibility of the reactor concept. Broader impacts of the design concept with respect to the ability to permit unprecedented control over the size distribution of the particles are discussed.

  12. Chemical and thermodynamic control of the surface of semiconductor nanocrystals for designer white light emitters.

    PubMed

    Krause, Michael M; Mooney, Jonathan; Kambhampati, Patanjali

    2013-07-23

    Small CdSe semiconductor nanocrystals with diameters below 2 nm are thought to emit white light due to random surface defects which result in a broad distribution of midgap emitting states, thereby preventing rational design of small nanocrystal white light emitters. We perform temperature dependent photoluminescence experiments before and after ligand exchange and electron transfer simulations to reveal a very simple microscopic picture of the origin of the white light. These experiments and simulations reveal that these small nanocrystals can be physically modeled in precisely the same way as normal-sized semiconductor nanocrystals; differences in their emission spectra arise from their surface thermodynamics. The white light emission is thus a consequence of the thermodynamic relationship between a core excitonic state and an optically bright surface state with good quantum yield. By virtue of this understanding of the surface and the manner in which it is coupled to the core excitonic states of these nanocrystals, we show both chemical and thermodynamic control of the photoluminescence spectra. We find that using both temperature and appropriate choice in ligands, one can rationally control the spectra so as to engineer the surface to target color rendering coordinates for displays and white light emitters.

  13. Conjugated polymers/semiconductor nanocrystals hybrid materials--preparation, electrical transport properties and applications.

    PubMed

    Reiss, Peter; Couderc, Elsa; De Girolamo, Julia; Pron, Adam

    2011-02-01

    This critical review discusses specific preparation and characterization methods applied to hybrid materials consisting of π-conjugated polymers (or oligomers) and semiconductor nanocrystals. These materials are of great importance in the quickly growing field of hybrid organic/inorganic electronics since they can serve as active components of photovoltaic cells, light emitting diodes, photodetectors and other devices. The electronic energy levels of the organic and inorganic components of the hybrid can be tuned individually and thin hybrid films can be processed using low cost solution based techniques. However, the interface between the hybrid components and the morphology of the hybrid directly influences the generation, separation and transport of charge carriers and those parameters are not easy to control. Therefore a large variety of different approaches for assembling the building blocks--conjugated polymers and semiconductor nanocrystals--has been developed. They range from their simple blending through various grafting procedures to methods exploiting specific non-covalent interactions between both components, induced by their tailor-made functionalization. In the first part of this review, we discuss the preparation of the building blocks (nanocrystals and polymers) and the strategies for their assembly into hybrid materials' thin films. In the second part, we focus on the charge carriers' generation and their transport within the hybrids. Finally, we summarize the performances of solar cells using conjugated polymer/semiconductor nanocrystals hybrids and give perspectives for future developments.

  14. Interfused semiconductor nanocrystals: brilliant blue photoluminescence and electroluminescence.

    PubMed

    Jun, Shinae; Jang, Eunjoo

    2005-09-28

    We describe a method for producing blue light-emitting interfused CdSe//ZnS (QE up to 60%) nanocrystals and report the good performance of an electroluminescent device which uses them (external quantum efficiency approximately 1.5 cd A(-1)).

  15. Fluorescence of semiconductor nanocrystals coupled to optical Tamm cavities

    NASA Astrophysics Data System (ADS)

    Feng, Fu; Pascale Senellart Team; Benoit Dubertret Team; Agnes Maitre Team

    We describe here the photoluminescence properties of a layer of colloidal CdSe/CdS fluorescent nanocrystals embedded in such a Tamm cavity. Spectral and angular analysis of fluorescence shows that the nanocrystals emission is into the Tamm states ; the emission dispersion relation for disks of various diameters shows the effect of the Tamm states lateral confinement. We also combined spatial and angular emission analysis and showed that the direction of emission is not the same for different points on a disk: emission from the left (resp. right) portion of the cavity is directed mostly in the left (resp. right) direction, in agreement with our numerical simulations. Our measurement scheme constitutes a probe of the Tamm state electric field phase gradient inside the cavity. Spatial and K space resolved spectroscopy.

  16. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    SciTech Connect

    Nagpal, Prashant; Klimov, Victor I.

    2011-09-27

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.

  17. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vicki L.

    1998-01-01

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed.

  18. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOEpatents

    Alivisatos, A.P.; Colvin, V.L.

    1998-05-12

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed. 10 figs.

  19. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    PubMed Central

    Nagpal, Prashant; Klimov, Victor I.

    2011-01-01

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges. PMID:21952220

  20. Coherent Superposition of Multi - Exciton Complexes in Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Shabaev, Andrew

    2005-03-01

    Very efficient multi-exciton generation has been recently observed in nanocrystals where an optically excited electron-hole pair with an energy greater than the bandgap (Eg) produces one or more additional electron-hole pairs [1,2]. We present a theory of multiple exciton generation in nanocrystals. We have shown that very efficient and fast exciton generation in nanocrystals occurs by the optical excitation of a coherent superposition of multi-exciton states by a single photon. This model explains ultrafast dynamics of optical bleaching that arises from state filling including quantum beats between the multi-exciton states. We have also shown that although highly efficient multiple exciton generation begins at photon energy 3Eg, the threshold of multiple exciton generation is 2Eg not, 3Eg as was suggested previously. 1. R. Schaller and V. Klimov, Phys. Rev. Lett. 92, 186601 (2004). 2. R. J. Ellingson, M. C. Beard, P. Yu, O. I. Micic, A. J. Nozik, A. Shabaev, and Al. L. Efros, submitted.

  1. A new method to fabricate size-selected compound semiconductor nanocrystals: aerotaxy

    NASA Astrophysics Data System (ADS)

    Deppert, Knut; Bovin, Jan-Olov; Malm, Jan-Olle; Samuelson, Lars

    1996-11-01

    A new method of fabrication is proposed to produce compound semiconductor nanocrystals with very narrow size distribution. It utilizes the formation of an aerosol of ultrafine group-III particles and their self-limited reaction with a group-V containing precursor at elevated temperatures. Since the new material grows in a self-organized fashion within the aerosol phase we call this process aerotaxy. GaAs nanocrystals, of approximate diameter 10 nm, have been produced by this method employing the reaction of Ga particles with arsine. The size of the final GaAs particle is self-limited by the size of the introduced size-selected Ga particle. This size can be tuned carefully. Transmission electron microscopy images exhibit good crystallinity of the particles. The kinetics of the transformation of Ga particles into GaAs nanocrystals depend on temperature and arsine flow. The starting temperature of this conversion was found to be as low as 200°C, which may be the result of a very high {V}/{III} ratio. Studies on the variation of particle diameter with the conditions of formation have indicated activation energies for different process steps. Our approach opens the possibility to produce large quantities of size-selected nanocrystals of compound semiconductors.

  2. Luminescence, Plasmonic and Magnetic Properties of Doped Semiconductor Nanocrystals: Current Developments and Future Prospects.

    PubMed

    Pradhan, Narayan; Adhikari, Samrat Das; Nag, Angshuman; Sarma, D D

    2017-02-02

    Introducing few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing or even introduce new properties. For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centres, show thermometric optical switching, make suitable FRET donors by enhancing the excited state lifetime and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion in order to meet the current demand for renewable energy. Moreover, electrical as well as magnetic properties of the host are also strongly altered on doping. These dopant-induced beneficial changes in material properties suggest that doped nanocrystals with proper selections of dopant-host pairs may be helpful for generating designer materials for a wide range of current technological needs. Such exciting properties related to various aspects of doping a variety of semiconductor nanocrystals are summarized and reported in this mini review.

  3. Synthesis and photo-darkening/photo-brightening of blue emitting doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sarkar, Suresh; Guria, Amit K.; Patra, Biplab K.; Pradhan, Narayan

    2014-03-01

    By programming the synthetic reaction chemistry, stable blue emitting Cu(i) or Ag(i) doped Al(iii) co-doped ZnS (Al,Cu:ZnS or Al,Ag:ZnS) semiconductor nanocrystals are designed. Further, the photostability of the obtained intense blue-violet emission is studied, and the effects of doping/co-doping are correlated. Finally, it is revealed that the strong binding surface ligand 1-dodecanethiol and Al(iii) co-doping play pivotal roles in achieving such stable blue emitting doped nanocrystals.By programming the synthetic reaction chemistry, stable blue emitting Cu(i) or Ag(i) doped Al(iii) co-doped ZnS (Al,Cu:ZnS or Al,Ag:ZnS) semiconductor nanocrystals are designed. Further, the photostability of the obtained intense blue-violet emission is studied, and the effects of doping/co-doping are correlated. Finally, it is revealed that the strong binding surface ligand 1-dodecanethiol and Al(iii) co-doping play pivotal roles in achieving such stable blue emitting doped nanocrystals. Electronic supplementary information available: Detail of synthesis and supporting figures. See DOI: 10.1039/c3nr06048a

  4. 3D imaging of semiconductor colloid nanocrystals: on the way to nanodiagnostics of track membranes

    NASA Astrophysics Data System (ADS)

    Kulyk, S. I.; Eremchev, I. Y.; Gorshelev, A. A.; Naumov, A. V.; Zagorsky, D. L.; Kotova, S. P.; Volostnikov, V. G.; Vorontsov, E. N.

    2016-12-01

    The work concerns the feasibility of 3D optical diagnostic of porous media with subdifraction spatial resolution via epi-luminescence microscopy of single semiconductor colloid nanocrystals (quantum dots, QD) CdSe/ZnS used as emitting labels/nanoprobes. The nanoprecise reconstruction of axial coordinate is provided by double helix technique of point spread function transformation (DH-PSF). The results of QD localization in polycarbonate track membrane (TM) is presented.

  5. 3D imaging of semiconductor colloid nanocrystals: on the way to nanodiagnostics of track membranes

    NASA Astrophysics Data System (ADS)

    Kulyk, S. I.; Eremchev, I. Y.; Gorshelev, A. A.; Naumov, A. V.; Zagorsky, D. L.; Kotova, S. P.; Volostnikov, V. G.; Vorontsov, E. N.

    2017-01-01

    The work concerns the feasibility of 3D optical diagnostic of porous media with subdifraction spatial resolution via epi-luminescence microscopy of single semiconductor colloid nanocrystals (quantum dots, QD) CdSe/ZnS used as emitting labels/nanoprobes. The nanoprecise reconstruction of axial coordinate is provided by double helix technique of point spread function transformation (DH-PSF). The results of QD localization in polycarbonate track membrane (TM) is presented.

  6. Manipulating the growth of aqueous semiconductor nanocrystals through amine-promoted kinetic process.

    PubMed

    Han, Jishu; Zhang, Hao; Sun, Haizhu; Zhou, Ding; Yang, Bai

    2010-01-14

    In the conventional procedure of the preparation of aqueous semiconductor nanocrystals (NCs), the growth of NCs was mainly through the thermodynamics-favored Ostwald ripening process. It required additional energy to promote NC growth, such as reflux, hydrothermal method, microwave irradiation, and sonochemical synthesis. Energy-promoted growth usually led to the decomposition of mercapto-ligands and therewith decreased the quality of NCs. Consequently, in this study, the growth of aqueous semiconductor NCs was designed through an amine-promoted kinetic process, which efficiently shortened the growth duration and avoided the decomposition of ligands, thus providing a universal method for preparing various aqueous binary and ternary NCs.

  7. Quantifying energy transfer in semiconductor nanocrystals using coherent phonon manipulation and ultrafast spectroscopy (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Spann, Bryan T.; Xu, Xianfan

    2015-10-01

    One potential way to increase photovoltaic efficiency is to take advantage of hot-carriers. Nanocrystal based solar cells aim to take advantage of hot-carrier capture to boost device performance. The crucial parameter for gauging a given nanocrystal material for this application is the electron-phonon coupling. The electron-phonon coupling will dictate the thermalization time of hot-carriers. In this study we demonstrate a method of quantifying the electron-phonon coupling in semiconductor nanocrystals. By employing ultrafast transient absorption spectroscopy with temporal pulse shaping, we manipulate coherent phonons in CdTe_{1-x}Se_{x} nanocrystals to quantify the efficiency of the electron-phonon coupling. The Raman active longitudinal optical phonon (LO) modes were excited and probed as a function of time. Using a temporal pulse shaper, we were able to control pump pulse pairs to coherently excite and cancel coherent phonons in the CdTe_{1-x}Se_{x} nanocrystals, and estimate the relative amount of optical energy that is coupled to the coherent CdSe LO mode which is the dominant thermalization pathway for the hot-electrons in this system.

  8. Synthesis and characterization of metal chalcogenide semiconductor nanocrystals using dialkyl dichalcogenide precursors

    NASA Astrophysics Data System (ADS)

    Norako, Michelle E.

    Metastable semiconductor nanocrystals have been shown to possess new and interesting properties that are highly reliant upon their synthetic reaction parameters. A versatile method for a relatively low temperature synthesis of metastable metal chalcogenide nanocrystals using dialkyl dichalcogenides as the chalcogen source has been developed. These precursors decompose in solution to promote the growth of kinetically controlled nanoscale products. Monodisperse metastable copper indium sulfide (CuInS2) nanocrystal were synthesized using di­tert­butyl disulfide as the sulfur source at 180 °C. In a similar fashion, metastable wurtzite copper indium selenide (CuInSe2) and metastable wurtzite copper tin selenide (CTSe) were synthesized and characterized for the first time. This method was further expanded to synthesize Cu2GeSe 3, Cu2SnS3, Ni0.95Se, CuSbS2, and PbS also using dialkyl dichalcogenide precursors. To further study these products, the nanocrystal growth mechanism was explored for the dichalcogenide­mediated synthesis of wz­CuInS2 and the potential applicability of the wurtzite CTSe nanocrystals as a photovoltaic material was assessed.

  9. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  10. Enhanced semiconductor nanocrystal conductance via solution grown contacts.

    PubMed

    Sheldon, Matthew T; Trudeau, Paul-Emile; Mokari, Taleb; Wang, Lin-Wang; Alivisatos, A Paul

    2009-11-01

    We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.

  11. Charged two-exciton emission from a single semiconductor nanocrystal

    SciTech Connect

    Hu, Fengrui; Zhang, Qiang; Zhang, Chunfeng; Wang, Xiaoyong; Xiao, Min

    2015-03-30

    Here, we study the photoluminescence (PL) time trajectories of single CdSe/ZnS nanocrystals (NCs) as a function of the laser excitation power. At the low laser power, the PL intensity of a single NC switches between the “on” and “off” levels arising from the neutral and positively charged single excitons, respectively. With the increasing laser power, an intermediate “grey” level is formed due to the optical emission from a charged multiexciton state composed of two excitons and an extra electron. Both the inter-photon correlation and the PL decay measurements demonstrate that lifetime-indistinguishable photon pairs are emitted from this negatively charged two-exciton state.

  12. Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

    SciTech Connect

    Sheldon, Matthew T.; Trudeau, Paul-Emile; Mokari, Taleb; Wang, Lin-Wang; Alivisatos, A. Paul

    2009-08-19

    We report a 100,000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-Vis and X-Ray photoelectron spectroscopy indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75percent lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of nanocrystal surface structure for robust device performance and the advantage of this contact method.

  13. 1/f noise in semiconductor and metal nanocrystal solids

    SciTech Connect

    Liu, Heng Lhuillier, Emmanuel Guyot-Sionnest, Philippe

    2014-04-21

    Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.

  14. Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

    SciTech Connect

    Holman, Zachary C.; Liu, Chin-Yi; Kortshagen, Uwe R.

    2010-07-09

    Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

  15. Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers.

    PubMed

    Mueller, Alexander H; Petruska, Melissa A; Achermann, Marc; Werder, Donald J; Akhadov, Elshan A; Koleske, Daniel D; Hoffbauer, Mark A; Klimov, Victor I

    2005-06-01

    Numerous technologies including solid-state lighting, displays, and traffic signals can benefit from efficient, color-selectable light sources that are driven electrically. Semiconductor nanocrystals are attractive types of chromophores that combine size-controlled emission colors and high emission efficiencies with excellent photostability and chemical flexibility. Applications of nanocrystals in light-emitting technologies, however, have been significantly hindered by difficulties in achieving direct electrical injection of carriers. Here we report the first successful demonstration of electroluminescence from an all-inorganic, nanocrystal-based architecture in which semiconductor nanocrystals are incorporated into a p-n junction formed from GaN injection layers. The critical step in the fabrication of these nanocrystal/GaN hybrid structures is the use of a novel deposition technique, energetic neutral atom beam lithography/epitaxy, that allows for the encapsulation of nanocrystals within a GaN matrix without adversely affecting either the nanocrystal integrity or its luminescence properties. We demonstrate electroluminescence (injection efficiencies of at least 1%) in both single- and two-color regimes using structures comprising either a single monolayer or a bilayer of nanocrystals.

  16. Multilayer hybrid LEDs based on colloidal inorganic semiconductors nanocrystal and PIN technology

    NASA Astrophysics Data System (ADS)

    Rizzo, Aurora; Mazzeo, Marco; Gigli, Giuseppe

    2008-04-01

    Light emitting devices (LEDs) based on colloidal semiconductor nanocrystals represent a matter of technological interest for the development of flat panel display and lighting systems. The appealing features of these materials are the high fluorescence efficiency, narrow ban edge emission, potential chemical stability, and tunable light emission across the visible spectrum. However the integration of these materials in the very promising PIN technology is still challenging due to the lack of an appropriate QD deposition technique. So far only wet deposition methods such as spin-coating and drop-casting have been exploited to realize QD thin film. Moreover QD thermal evaporation is not possible because of their high molecular weight. In this scenario we developed a dry, simple, and inexpensive deposition technique to transfer semiconductor QDs on organic semiconductor materials. We exploited this technique to fabricated an organic/inorganic hybrid red emitting device whit a doped hole transport layer.

  17. Interfacing nanocarbons with organic and inorganic semiconductors: from nanocrystals/quantum dots to extended tetrathiafulvalenes.

    PubMed

    Katsukis, Georgios; Romero-Nieto, Carlos; Malig, Jenny; Ehli, Christian; Guldi, Dirk M

    2012-08-14

    There is no doubt that the outstanding optical and electronic properties that low-dimensional carbon-based nanomaterials exhibit call for their implementation into optoelectronic devices. However, to harvest the enormous potential of these nanocarbons it is essential to probe them in multifunctional electron donor-acceptor systems, placing particular attention on the interactions between electron donors/electron acceptors and nanocarbons. This feature article outlines challenges and recent breakthroughs in the area of interfacing organic and inorganic semiconductors with low-dimensional nanocarbons that range from fullerenes (0D) and carbon nanotubes (1D) to graphene (2D). In the context of organic semiconductors, we focus on aromatic macrocycles and extended tetrathiafulvalenes, and CdTe nanocrystals/quantum dots represent the inorganic semiconductors. Particular emphasis is placed on designing and probing solar energy conversion nanohybrids.

  18. Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

    NASA Astrophysics Data System (ADS)

    Suárez Alvarez, Isaac

    2016-10-01

    Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

  19. Carrier multiplication in semiconductor nanocrystals detected by energy transfer to organic dye molecules

    PubMed Central

    Xiao, Jun; Wang, Ying; Hua, Zheng; Wang, Xiaoyong; Zhang, Chunfeng; Xiao, Min

    2012-01-01

    Carrier multiplication describes an interesting optical phenomenon in semiconductors whereby more than one electron-hole pair, or exciton, can be simultaneously generated upon absorption of a single high-energy photon. So far, it has been highly debated whether the carrier multiplication efficiency is enhanced in semiconductor nanocrystals as compared with their bulk counterpart. The controversy arises from the fact that the ultrafast optical methods currently used need to correctly account for the false contribution of charged excitons to the carrier multiplication signals. Here we show that this charged exciton issue can be resolved in an energy transfer system, where biexcitons generated in the donor nanocrystals are transferred to the acceptor dyes, leading to an enhanced fluorescence from the latter. With the biexciton Auger and energy transfer lifetime measurements, an average carrier multiplication efficiency of ~17.1% can be roughly estimated in CdSe nanocrystals when the excitation photon energy is ~2.46 times of their energy gap. PMID:23132020

  20. Broadband up-conversion at subsolar irradiance: triplet-triplet annihilation boosted by fluorescent semiconductor nanocrystals.

    PubMed

    Monguzzi, A; Braga, D; Gandini, M; Holmberg, V C; Kim, D K; Sahu, A; Norris, D J; Meinardi, F

    2014-11-12

    Conventional solar cells exhibit limited efficiencies in part due to their inability to absorb the entire solar spectrum. Sub-band-gap photons are typically lost but could be captured if a material that performs up-conversion, which shifts photon energies higher, is coupled to the device. Recently, molecular chromophores that undergo triplet-triplet annihilation (TTA) have shown promise for efficient up-conversion at low irradiance, suitable for some types of solar cells. However, the molecular systems that have shown the highest up-conversion efficiency to date are ill suited to broadband light harvesting, reducing their applicability. Here we overcome this limitation by combining an organic TTA system with highly fluorescent CdSe semiconductor nanocrystals. Because of their broadband absorption and spectrally narrow, size-tunable fluorescence, the nanocrystals absorb the radiation lost by the TTA chromophores, returning this energy to the up-converter. The resulting nanocrystal-boosted system shows a doubled light-harvesting ability, which allows a green-to-blue conversion efficiency of ∼12.5% under 0.5 suns of incoherent excitation. This record efficiency at subsolar irradiance demonstrates that boosting the TTA by light-emitting nanocrystals can potentially provide a general route for up-conversion for different photovoltaic and photocatalytic applications.

  1. A novel continuous microfluidic reactor design for the controlled production of high-quality semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Winterton, Jeffrey D.; Myers, David R.; Lippmann, Julian M.; Pisano, Albert P.; Doyle, Fiona M.

    2008-08-01

    An innovative microfluidic reactor concept for the production of high quality semiconductor nanocrystals is presented. The reactor features a droplet-based, two phase flow design that eliminates the dispersion-induced broadening of the particle size distribution that is characteristic of other microfluidic designs. The flow channels in the design are arranged to spiral in and out of novel reaction coin structures that are designed to allow the thermal profile of the reactor to be tailored to the requirements of specific nanocrystal synthesis operations. A simplified prototype reactor has been constructed and tested to demonstrate the feasibility of the reactor concept. Broader impacts of the design concept with respect to the ability to permit unprecedented control over the size distribution of the particles are discussed.

  2. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Shen, Qihui; Yu, Dongdong; Shi, Weiguang; Li, Jixue; Zhou, Jianguang; Liu, Xiaoyang

    2008-06-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  3. Semiconductor Nanocrystals as Light Harvesters in Solar Cells

    PubMed Central

    Etgar, Lioz

    2013-01-01

    Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered. PMID:28809318

  4. Semiconductor Nanocrystals as Light Harvesters in Solar Cells.

    PubMed

    Etgar, Lioz

    2013-02-04

    Photovoltaic cells use semiconductors to convert sunlight into electrical current and are regarded as a key technology for a sustainable energy supply. Quantum dot-based solar cells have shown great potential as next generation, high performance, low-cost photovoltaics due to the outstanding optoelectronic properties of quantum dots and their multiple exciton generation (MEG) capability. This review focuses on QDs as light harvesters in solar cells, including different structures of QD-based solar cells, such as QD heterojunction solar cells, QD-Schottky solar cells, QD-sensitized solar cells and the recent development in organic-inorganic perovskite heterojunction solar cells. Mechanisms, procedures, advantages, disadvantages and the latest results obtained in the field are described. To summarize, a future perspective is offered.

  5. Rational design of the gram-scale synthesis of nearly monodisperse semiconductor nanocrystals

    PubMed Central

    2011-01-01

    We address two aspects of general interest for the chemical synthesis of colloidal semiconductor nanocrystals: (1) the rational design of the synthesis protocol aiming at the optimization of the reaction parameters in a minimum number of experiments; (2) the transfer of the procedure to the gram scale, while maintaining a low size distribution and maximizing the reaction yield. Concerning the first point, the design-of-experiment (DOE) method has been applied to the synthesis of colloidal CdSe nanocrystals. We demonstrate that 16 experiments, analyzed by means of a Taguchi L16 table, are sufficient to optimize the reaction parameters for controlling the mean size of the nanocrystals in a large range while keeping the size distribution narrow (5-10%). The DOE method strongly reduces the number of experiments necessary for the optimization as compared to trial-and-error approaches. Furthermore, the Taguchi table analysis reveals the degree of influence of each reaction parameter investigated (e.g., the nature and concentration of reagents, the solvent, the reaction temperature) and indicates the interactions between them. On the basis of these results, the synthesis has been scaled up by a factor of 20. Using a 2-L batch reactor combined with a high-throughput peristaltic pump, different-sized samples of CdSe nanocrystals with yields of 2-3 g per synthesis have been produced without sacrificing the narrow size distribution. In a similar setup, the gram-scale synthesis of CdSe/CdS/ZnS core/shell/shell nanocrystals exhibiting a fluorescence quantum yield of 81% and excellent resistance of the photoluminescence in presence of a fluorescent quencher (aromatic thiol) has been achieved. PACS: 81.20.Ka, 81.07.Bc, 78.67.Bf PMID:21791060

  6. Rational design of the gram-scale synthesis of nearly monodisperse semiconductor nanocrystals.

    PubMed

    Protière, Myriam; Nerambourg, Nicolas; Renard, Olivier; Reiss, Peter

    2011-07-26

    We address two aspects of general interest for the chemical synthesis of colloidal semiconductor nanocrystals: (1) the rational design of the synthesis protocol aiming at the optimization of the reaction parameters in a minimum number of experiments; (2) the transfer of the procedure to the gram scale, while maintaining a low size distribution and maximizing the reaction yield. Concerning the first point, the design-of-experiment (DOE) method has been applied to the synthesis of colloidal CdSe nanocrystals. We demonstrate that 16 experiments, analyzed by means of a Taguchi L16 table, are sufficient to optimize the reaction parameters for controlling the mean size of the nanocrystals in a large range while keeping the size distribution narrow (5-10%). The DOE method strongly reduces the number of experiments necessary for the optimization as compared to trial-and-error approaches. Furthermore, the Taguchi table analysis reveals the degree of influence of each reaction parameter investigated (e.g., the nature and concentration of reagents, the solvent, the reaction temperature) and indicates the interactions between them. On the basis of these results, the synthesis has been scaled up by a factor of 20. Using a 2-L batch reactor combined with a high-throughput peristaltic pump, different-sized samples of CdSe nanocrystals with yields of 2-3 g per synthesis have been produced without sacrificing the narrow size distribution. In a similar setup, the gram-scale synthesis of CdSe/CdS/ZnS core/shell/shell nanocrystals exhibiting a fluorescence quantum yield of 81% and excellent resistance of the photoluminescence in presence of a fluorescent quencher (aromatic thiol) has been achieved.PACS: 81.20.Ka, 81.07.Bc, 78.67.Bf.

  7. Rational design of the gram-scale synthesis of nearly monodisperse semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Protière, Myriam; Nerambourg, Nicolas; Renard, Olivier; Reiss, Peter

    2011-07-01

    We address two aspects of general interest for the chemical synthesis of colloidal semiconductor nanocrystals: (1) the rational design of the synthesis protocol aiming at the optimization of the reaction parameters in a minimum number of experiments; (2) the transfer of the procedure to the gram scale, while maintaining a low size distribution and maximizing the reaction yield. Concerning the first point, the design-of-experiment (DOE) method has been applied to the synthesis of colloidal CdSe nanocrystals. We demonstrate that 16 experiments, analyzed by means of a Taguchi L16 table, are sufficient to optimize the reaction parameters for controlling the mean size of the nanocrystals in a large range while keeping the size distribution narrow (5-10%). The DOE method strongly reduces the number of experiments necessary for the optimization as compared to trial-and-error approaches. Furthermore, the Taguchi table analysis reveals the degree of influence of each reaction parameter investigated (e.g., the nature and concentration of reagents, the solvent, the reaction temperature) and indicates the interactions between them. On the basis of these results, the synthesis has been scaled up by a factor of 20. Using a 2-L batch reactor combined with a high-throughput peristaltic pump, different-sized samples of CdSe nanocrystals with yields of 2-3 g per synthesis have been produced without sacrificing the narrow size distribution. In a similar setup, the gram-scale synthesis of CdSe/CdS/ZnS core/shell/shell nanocrystals exhibiting a fluorescence quantum yield of 81% and excellent resistance of the photoluminescence in presence of a fluorescent quencher (aromatic thiol) has been achieved. PACS: 81.20.Ka, 81.07.Bc, 78.67.Bf

  8. Highly fluorescent semiconductor core shell CdTe CdS nanocrystals for monitoring living yeast cells activity

    NASA Astrophysics Data System (ADS)

    de Farias, P. M. A.; Santos, B. S.; Menezes, F. D.; Brasil, A. G., Jr.; Ferreira, R.; Motta, M. A.; Castro-Neto, A. G.; Vieira, A. A. S.; Silva, D. C. N.; Fontes, A.; Cesar, C. L.

    2007-12-01

    Fluorescent semiconductor nanocrystals in quantum confinement regime (quantum dots) present several well-known features which make them very useful tools for biological labeling purposes. Low photobleaching rates, high chemical stability and active surface allowing conjugation to living cells explain the success of this labeling procedure over the commonly used fluorescent dyes. In this paper we report the results obtained with highly fluorescent core shell CdTe CdS (diameter=3 7 nm) colloidal nanocrystals synthesized in aqueous medium and conjugated to glucose molecules. The conjugated nanocrystals were incubated with living yeast cells, in order to investigate their glucose up-take activity in real time, by confocal microscopy analysis.

  9. Resonance energy transfer in conjugates of semiconductor nanocrystals and organic dye molecules

    NASA Astrophysics Data System (ADS)

    Artemyev, Mikhail

    2012-01-01

    I analyze the efficiency of Förster resonance energy transfer (FRET) in luminescent donor-acceptor complexes based on conjugates of CdSe/ZnS quantum dots and nanorods and the luminescent dyes. Semiconductor nanocrystals serve either as FRET donors or acceptors. Experimentally observed reduced FRET efficiency in complexes of nanorods and dye molecules as compared to quantum dots are found to be attributable to a distance-limited energy transfer rate in case of point-like dye dipoles and extended nanorod dipole.

  10. Modeling the antireflective properties of composite materials based on semiconductor filamentary nanocrystals

    NASA Astrophysics Data System (ADS)

    Gorai, L. I.; Buravlev, A. D.; Ponyaev, S. A.

    2015-07-01

    The feasibility of application of films of composite materials based on semiconductor filamentary nanocrystals (FNCs) to suppress the reflection of electromagnetic radiation in the radiofrequency range is demonstrated for the first time with the use of the effective medium theory (EMT). It is shown that the reflec- tion coefficients of single- and double-layer models may be reduced several-fold and by as much as two orders of magnitude, respectively, in a wide range of parameters. The agreement of the EMT data with the results of rigorous calculations allows one to apply the zeroth-order EMT in the analysis and synthesis of antireflective composite materials based on FNCs.

  11. The colloidal chemistry synthesis and electron microscopy characterization of shape-controlled metal and semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Biacchi, Adam J.

    Solution methods of materials synthesis have found application in a variety of fields due to the diversity of products accessible, facility of process scalability, and the ease of tuning their properties through prudent selection of reaction conditions. Control of experimental variables during the formation of colloidally stable nanoscale solids within a liquid matrix allows for tailoring of the particles' characteristics, including shape, size, composition, and surface chemistry. In this dissertation, I will discuss how the manipulation of reaction chemistries can be used to synthesize shape-controlled metal and semiconductor colloidal nanocrystals. Further, I will elaborate on the mechanisms by which these particles form from molecular precursors and describe how their properties can differ from their bulk analogues through extensive characterization, especially using transmission electron microscopy. These studies contribute to the continued development of chemical routes to nanocrystals and their application as functional materials. First, I will review recent advances in the synthesis and characterization of shape-controlled nanocrystals, as well as highlight their promising applicability in a number of emerging technologies. These principles will then be leveraged to the specific case of catalytically-active rhodium nanocrystals, which can be synthesized with morphological and dimensional control using a polyol solution-mediated strategy. I describe an innovative shape-controlled synthesis to monodisperse colloidal rhodium icosahedra, cubes, triangular plates, and octahedra using this route. Additionally, new insights into the important role of the polyol reducing solvent on the synthesis of these nanocrystals are revealed, and how these might be exploited to engender superior reaction control and novel products. Next, I will describe how a crystallization mechanism was established for the synthesis of numerous morphologies of noble metal nanocrystals. I

  12. Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals

    NASA Astrophysics Data System (ADS)

    Lindberg, G. P.; Weinstein, B. A.

    2016-10-01

    Precipitation of anion nanocrystals (NCs) in initially stoichiometric II-VI crystals under hydrostatic pressure and light exposure is explored by Raman spectroscopy, and the mechanism for this effect is analyzed by model calculations. ZnSe, ZnTe, and CdSe crystals are studied in bulk and/or epitaxial-film forms. Se and Te NCs in the trigonal (t) phase precipitate in ZnSe and ZnTe, but the effect is absent or minimal in CdSe. The precipitation is induced by pressure and assisted by sub-band-gap light. In ZnSe, t-Se NCs appear for pressure exceeding 4.8 GPa and light flux above 50 -70 W /m m2 . In ZnTe, the precipitation of t-Te NCs requires less pressure to initiate, and there is a clear upper-pressure limit for t-Te nuclei to form. We find also that ZnTe samples with cleavage damage or elevated zinc-vacancy content are more prone to form t-Te NCs at lower pressures (even 1 atm in some cases) and lower flux. The precipitation seen in ZnSe and ZnTe occurs at pressures far below their phase transitions, and cannot be due to those transitions. Rather, we propose that the NCs nucleate on dislocations that arise from hydrostatic-pressure induced plastic flow triggered by noncubic defect sites. Calculations of the kinetic barrier for growth of an optimally shaped nucleus are performed, including hydrostatic pressure in the energy minimization scheme. Using sensible values for the model parameters related to the cohesive energies of Se and Te, the calculations account for our main observations, including the existence of an upper pressure limit for precipitation, and the absence of precipitation in CdSe. We consider the effects of pressure-induced precipitate formation on the I-II phase transitions in a variety of binary semiconductors and make predictions of when this effect should be important.

  13. Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals

    SciTech Connect

    Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

    2006-09-09

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  14. DNA-templated semiconductor nanocrystal growth for controlled DNA packing and gene delivery.

    PubMed

    Gao, Li; Ma, Nan

    2012-01-24

    DNA-templated semiconductor nanocrystal (SNC) growth represents a facile means to generate bioactive hybrid nanostructures by directly integrating DNA molecules and luminescent SNCs together via a one-step synthesis, which has been applied to biosensing and cell imaging. In this study we for the first time demonstrated that DNA-templated CdS SNC growth could also be used to rationally tune the structures and activities of large DNA molecules. We explored the synergistic effects of nanocrystal growth on the sizes and charges of DNA molecules and demonstrate that the CdS growth-induced DNA packing could be used as a smart gene delivery system. Herein we used DNA plasmids encoding intact enhanced green fluorescence protein (EGFP) genes as templates to grow CdS SNCs and found that the stepwise growth of CdS nanocrystals can spontaneously induce DNA condensation and negative charge shielding in a synergistic manner. The condensed DNA plasmids exhibited efficient cellular uptake and a relative gene transfection efficiency of 32%. The transfection efficiency can be further doubled in the presence of chloroquine. We elucidated that the gene transfection and expression is controlled by reversible DNA packing, where ligand exchange of DNA with intracellular glutathione molecules plays a critical role in the recovery of DNA plasmids for gene expression. © 2011 American Chemical Society

  15. Microscopic defect induced slow-mode degradation in II VI based blue green laser diodes

    NASA Astrophysics Data System (ADS)

    Adachi, Masahiro; Min Aung, Zaw; Minami, Kouichirou; Koizumi, Keiichi; Watanabe, Masashi; Kawamoto, Seiji; Yamaguchi, Tsutomu; Kasada, Hirofumi; Abe, Tomoki; Ando, Koshi; Nakano, Kazushi; Ishibashi, Akira; Itoh, Satoshi

    2000-06-01

    We have studied the microdefect induced degradation mode in long-lifetime blue-green laser diodes (LDs) and light emitting diodes (LEDs) based on II-VI wide bandgap semiconductors. Microscopic deep defect centers in the LDs and LEDs are detected using mainly DLTS technique, coupled with ICTS methods. It is evidenced that a slow-mode degradation, commonly observed in dislocation-free LD devices, is caused by the generation and enhancement of microscopic deep centers during the device aging process. One possible degradation mechanism with a "carrier removal effect" is presented.

  16. Vacancy formation energies in II-VI semiconductors

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.

    1987-01-01

    Cation and anion vacancy formation energies are calculated for HgTe, ZnTe, CdTe, and their dilute alloys. Harrison's tight-bonding theory is extended to a cluster embedded in an extended crystal. Only neutral vacancies have been considered, and two final states for the removed atom have been addressed: a free atom in vacuum and an atom on an ideal (111) surface.

  17. Nanocrystals encapsulated in SiO2 particles: silanization and homogenous coating for bio applications.

    PubMed

    Yang, Ping; Li, Xiaoyu; Zhang, Ruili; Liu, Ning; Zhang, Yulan

    2013-03-01

    Sol-gel procedures have been developed to encapsulate inorganic nanocrystals including metallic Au and II-VI semiconductor materials (CdSe/Cd(1-x)Zn(x)S) in SiO2 particles by using tetraethyl orthosilicate. The key strategy was the control of a sol-gel procedure. The anisotropic deposition of SiO2 monomers occurs because well-developed crystal facets having different affinity to SiO2 monomers. SiO2 monomers were not homogeneously deposited on nonspherical Au and CdSe/Cd(1-x)Zn(x)S nanocrystals. A surface silanization process, partly hydrolyzed tetraethyl orthosilicate were attached to the nanocrystals instead of initial ligands, plays an important role for the nanocrystals coated homogeneously with a SiO2 layer. Furthermore, CdSe/Cd(1-x)Zn(x)S nanocrystals were homogeneously coated with a thin SiO2 layer by the surface silanization process and a subsequent reverse micelle route. Colloidal Au nanocrystals were homogeneously coated with a SiO2 shell by the surface silanization process and subsequent Stöber synthesis without using a silane coupling agent or bulk polymer as the surface primer to render the Au surface vitreophilic. These results indicated partly hydrolyzed tetraethyl orthosilicate has an ability to replace the ligand on nanocrystals. After surface modification, the SiO2 particles with nanocrystals were conjugated with antibody for bioapplications.

  18. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, Shen; Li, Chao; Scripa, R.; Lehoczky, Sandra L.; Kim, Y. W.; Baird, J. K.; Lin, B.; Ban, Heng; Benmore, Chris

    2003-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.

  19. The More Exotic Shapes of Semiconductor Nanocrystals: Emerging Applications in Bioimaging

    PubMed Central

    Lim, Sung Jun; Smith, Andrew; Nie, Shuming

    2014-01-01

    Semiconductor nanocrystals are tiny fluorescent particles that have recently made a major impact in the biological and medical sciences by enabling high-sensitivity imaging of biomolecules, cells, and tissues. Spherical quantum dots are the prototypical material for these applications but recent synthetic advances have led to a diverse range of nanostructures with controllable sizes, shapes, and materials combinations that offer new dimensions of optical and structural tunability. Uniform anisotropic shapes with linearly polarized light emission allow optical imaging of particle orientation, planar structures have large flexible surfaces and ultra-narrow electronic transitions, and compact nanoparticles have enhanced diffusion in crowded biological environments. These properties are providing unique opportunities to probe basic biological processes, cellular structures, and organismal physiology. PMID:24982823

  20. Getting across the plasma membrane and beyond: intracellular uses of colloidal semiconductor nanocrystals.

    PubMed

    Luccardini, Camilla; Yakovlev, Aleksey; Gaillard, Stéphane; van 't Hoff, Marcel; Alberola, Alicia Piera; Mallet, Jean-Maurice; Parak, Wolfgang J; Feltz, Anne; Oheim, Martin

    2007-01-01

    Semiconductor nanocrystals (NCs) are increasingly being used as photoluminescen markers in biological imaging. Their brightness, large Stokes shift, and high photostability compared to organic fluorophores permit the exploration of biological phenomena at the single-molecule scale with superior temporal resolution and spatial precision. NCs have predominantly been used as extracellular markers for tagging and tracking membrane proteins. Successful internalization and intracellular labelling with NCs have been demonstrated for both fixed immunolabelled and live cells. However, the precise localization and subcellular compartment labelled are less clear. Generally, live cell studies are limited by the requirement of fairly invasive protocols for loading NCs and the relatively large size of NCs compared to the cellular machinery, along with the subsequent sequestration of NCs in endosomal/lysosomal compartments. For long-period observation the potential cytotoxicity of cytoplasmically loaded NCs must be evaluated. This review focuses on the challenges of intracellular uses of NCs.

  1. Extended storage of multiple excitons in trap states of semiconductor nanocrystals

    SciTech Connect

    Xu, Qinfeng; Huang, Xiangnan; Hua, Zheng; Zhang, Chunfeng; Wang, Xiaoyong; Hu, Lian; Du, Lingxiao; Wu, Huizhen; Xiao, Min

    2016-02-29

    Owing to the Auger recombination effect, multiple excitons (MEs) in semiconductor nanocrystals (NCs) are dissipated nonradiatively at the sub-nanosecond time scale, which sets a stringent limit on the time window within which one can operate with them. Here, we show that this issue can be resolved by utilizing an intrinsic energy transfer system in CdSe NCs, where MEs created in the donor quantized states can be effectively extracted to the acceptor trap states. This was evidenced by the step-like increase in the intensity and the apparent decrease in the rise time of the trap-state photoluminescence with the elevated laser excitation power. With the radiative lifetime being tens of nanoseconds for the trap states, extended storage of MEs has been achieved and marks a crucial step towards flexible manipulations of their optoelectronic properties.

  2. Charge Blinking Statistics of Semiconductor Nanocrystals Revealed by Carbon Nanotube Single Charge Sensors.

    PubMed

    Zbydniewska, Ewa; Duzynska, Anna; Popoff, Michka; Hourlier, Djamila; Lenfant, Stéphane; Judek, Jaroslaw; Zdrojek, Mariusz; Mélin, Thierry

    2015-10-14

    We demonstrate the relation between the optical blinking of colloidal semiconductor nanocrystals (NCs) and their electrical charge blinking for which we provide the first experimental observation of power-law statistics. To show this, we harness the performance of CdSe/ZnS NCs coupled with carbon nanotube field-effect transistors (CNTFETs), which act as single charge-sensitive electrometers with submillisecond time resolution, at room temperature. A random telegraph signal (RTS) associated with the NC single-trap charging is observed and exhibits power-law temporal statistics (τ(-α), with α in the range of ∼1-3), and a Lorentzian current noise power spectrum with a well-defined 1/f(2) corner. The spectroscopic analysis of the NC-CNTFET devices is consistent with the charging of NC defect states with a charging energy of Ec ≥ 200 meV. These results pave the way for a deeper understanding of the physics and technology of nanocrystal-based optoelectronic devices.

  3. General low-temperature reaction pathway from precursors to monomers before nucleation of compound semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Yu, Kui; Liu, Xiangyang; Qi, Ting; Yang, Huaqing; Whitfield, Dennis M.; Y. Chen, Queena; Huisman, Erik J. C.; Hu, Changwei

    2016-08-01

    Little is known about the molecular pathway to monomers of semiconductor nanocrystals. Here we report a general reaction pathway, which is based on hydrogen-mediated ligand loss for the precursor conversion to `monomers' at low temperature before nucleation. We apply 31P nuclear magnetic resonance spectroscopy to monitor the key phosphorous-containing products that evolve from MXn+E=PPh2H+HY mixtures, where MXn, E=PPh2H, and HY are metal precursors, chalcogenide precursors, and additives, respectively. Surprisingly, the phosphorous-containing products detected can be categorized into two groups, Ph2P-Y and Ph2P(E)-Y. On the basis of our experimental and theoretical results, we propose two competing pathways to the formation of M2En monomers, each of which is accompanied by one of the two products. Our study unravels the pathway of precursor evolution into M2En monomers, the stoichiometry of which directly correlates with the atomic composition of the final compound nanocrystals.

  4. Semiconductor nanocrystal-aptamer bioconjugate probes for specific prostate carcinoma cell targeting

    NASA Astrophysics Data System (ADS)

    Shieh, Felice; Lavery, Laura; Chu, Chitai T.; Richards-Kortum, Rebecca; Ellington, Andrew D.; Korgel, Brian A.

    2005-04-01

    Cancer of the prostate affects approximately 1 in 11 men. Current early screening for prostate cancer utilizes digital rectal examinations to detect anomalies in the prostate gland and blood test screenings for upregulated levels of prostate specific antigen (PSA). Many of these tests are invasive and can often be inconclusive as PSA levels may be heightened due to benign factors. Prostate specific membrane antigen (PSMA), a well-characterized integral membrane protein, is expressed in virtually all prostate cancers and often correlates with cancer aggressiveness. Therefore, it may be used as an indicator of cancer growth and metastases. PSMA-specific antibodies have been identified and conjugated to fluorescent markers for cancer cell targeting; however, both the antibodies and markers possess significant limitations in their pharmaceutical and diagnostic value. Here we report the use of semiconductor nanocrystals bioconjugated to PSMA-specific aptamer recognition molecules for prostate carcinoma cell targeting. The nanocrystal/aptamer bioconjugates are small biocompatible probes with the potential for color-tunability for multicolor imaging. Ongoing in vitro and in vivo research seeks to introduce these nanoparticle bioconjugates into medical diagnostics.

  5. General low-temperature reaction pathway from precursors to monomers before nucleation of compound semiconductor nanocrystals

    PubMed Central

    Yu, Kui; Liu, Xiangyang; Qi, Ting; Yang, Huaqing; Whitfield, Dennis M.; Y. Chen, Queena; Huisman, Erik J. C.; Hu, Changwei

    2016-01-01

    Little is known about the molecular pathway to monomers of semiconductor nanocrystals. Here we report a general reaction pathway, which is based on hydrogen-mediated ligand loss for the precursor conversion to ‘monomers' at low temperature before nucleation. We apply 31P nuclear magnetic resonance spectroscopy to monitor the key phosphorous-containing products that evolve from MXn+E=PPh2H+HY mixtures, where MXn, E=PPh2H, and HY are metal precursors, chalcogenide precursors, and additives, respectively. Surprisingly, the phosphorous-containing products detected can be categorized into two groups, Ph2P–Y and Ph2P(E)–Y. On the basis of our experimental and theoretical results, we propose two competing pathways to the formation of M2En monomers, each of which is accompanied by one of the two products. Our study unravels the pathway of precursor evolution into M2En monomers, the stoichiometry of which directly correlates with the atomic composition of the final compound nanocrystals. PMID:27531507

  6. Direct measurement of lattice dynamics and optical phonon excitation in semiconductor nanocrystals using femtosecond stimulated Raman spectroscopy.

    PubMed

    Hannah, Daniel C; Brown, Kristen E; Young, Ryan M; Wasielewski, Michael R; Schatz, George C; Co, Dick T; Schaller, Richard D

    2013-09-06

    We report femtosecond stimulated Raman spectroscopy measurements of lattice dynamics in semiconductor nanocrystals and characterize longitudinal optical (LO) phonon production during confinement-enhanced, ultrafast intraband relaxation. Stimulated Raman signals from unexcited CdSe nanocrystals produce a spectral shape similar to spontaneous Raman signals. Upon photoexcitation, stimulated Raman amplitude decreases owing to experimentally resolved ultrafast phonon generation rates within the lattice. We find a ∼600  fs, particle-size-independent depletion time attributed to hole cooling, evidence of LO-to-acoustic down-conversion, and LO phonon mode softening.

  7. Challenge to the Charging Model of Semiconductor-Nanocrystal Fluorescence Intermittency from Off-State Quantum Yields and Multiexciton Blinking

    NASA Astrophysics Data System (ADS)

    Zhao, Jing; Nair, Gautham; Fisher, Brent R.; Bawendi, Moungi G.

    2010-04-01

    Semiconductor nanocrystals emit light intermittently; i.e., they “blink,” under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core(shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10∶1. These results directly contradict the predictions of the charging model.

  8. Challenge to the Charging Model of Semiconductor-Nanocrystal Fluorescence Intermittency from Off-State Quantum Yields and Multiexciton Blinking

    PubMed Central

    Zhao, Jing; Nair, Gautham; Fisher, Brent R.; Bawendi, Moungi G.

    2012-01-01

    Semiconductor nanocrystals emit light intermittently; i.e., they “blink,” under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core (shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10:1. These results directly contradict the predictions of the charging model. PMID:20482016

  9. Challenge to the charging model of semiconductor-nanocrystal fluorescence intermittency from off-state quantum yields and multiexciton blinking.

    PubMed

    Zhao, Jing; Nair, Gautham; Fisher, Brent R; Bawendi, Moungi G

    2010-04-16

    Semiconductor nanocrystals emit light intermittently; i.e., they "blink," under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core(shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10:1. These results directly contradict the predictions of the charging model.

  10. Challenge to the Charging Model of Semiconductor-Nanocrystal Fluorescence Intermittency from Off-State Quantum Yields and Multiexciton Blinking

    SciTech Connect

    Zhao, Jing; Nair, Gautham; Fisher, Brent R.; Bawendi, Moungi G.

    2010-04-16

    Semiconductor nanocrystals emit light intermittently; i.e., they “blink,” under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core(shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10:1 . These results directly contradict the predictions of the charging model.

  11. Bioinspired solar water splitting, sensitized solar cells, and ultraviolet sensor based on semiconductor nanocrystal antenna/graphene nanoassemblies

    NASA Astrophysics Data System (ADS)

    Chang, Haixin; Lv, Xiaojun; Zheng, Zijian; Wu, Hongkai

    2011-11-01

    Graphene, two-dimensional carbon crystal with only one atom thickness, provides a general platform for nanoscale even atomic scale optoelectronics and photonics. Graphene has many advantages for optoelectronics such as high conductivity, high electronic mobility, flexibility and transparency. However, graphene also has disadvantages such as low light absorption which are unfavorable for optoelectronic devices. On the other hand, many natural photonic systems provide wonderful solution to enhance light absorption for solar energy harvesting and conversion, such as chlorophyll in green plants. Herein, learning from nature, we described bioinspired photocatalytic solar-driven water splitting, sensitized solar cells and ultraviolet optoelectronic sensors enabled by introducing photosensitive semiconductor nanocrystal antenna to graphene for constructing a series of graphene/nanocrystal nanoassemblies. We have demonstrated that high performance optoelectronic devices can come true with the introducing of photosensitive nanocrystal antenna elements.

  12. Bioinspired solar water splitting, sensitized solar cells, and ultraviolet sensor based on semiconductor nanocrystal antenna/graphene nanoassemblies

    NASA Astrophysics Data System (ADS)

    Chang, Haixin; Lv, Xiaojun; Zheng, Zijian; Wu, Hongkai

    2012-02-01

    Graphene, two-dimensional carbon crystal with only one atom thickness, provides a general platform for nanoscale even atomic scale optoelectronics and photonics. Graphene has many advantages for optoelectronics such as high conductivity, high electronic mobility, flexibility and transparency. However, graphene also has disadvantages such as low light absorption which are unfavorable for optoelectronic devices. On the other hand, many natural photonic systems provide wonderful solution to enhance light absorption for solar energy harvesting and conversion, such as chlorophyll in green plants. Herein, learning from nature, we described bioinspired photocatalytic solar-driven water splitting, sensitized solar cells and ultraviolet optoelectronic sensors enabled by introducing photosensitive semiconductor nanocrystal antenna to graphene for constructing a series of graphene/nanocrystal nanoassemblies. We have demonstrated that high performance optoelectronic devices can come true with the introducing of photosensitive nanocrystal antenna elements.

  13. Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

    DTIC Science & Technology

    1994-02-28

    isoelectronic trap. We have evidence that II-VI semiconductors, ZnTe doped with oxygen -electron the other RE ions in IlI-V semiconductors can occupy traps...act as donors exciton. or acceptors. The important roles of oxygen on RE It has been well established that the "simple" isoelect- luminescence have...agreement with experimnt, over a wide rang of genration rates. T electric field InP:.Yb photoun~escence quenching was investigated and reported for the

  14. Cyclotron Splittings in the Plasmon Resonances of Electronically Doped Semiconductor Nanocrystals Probed by Magnetic Circular Dichroism Spectroscopy.

    PubMed

    Hartstein, Kimberly H; Schimpf, Alina M; Salvador, Michael; Gamelin, Daniel R

    2017-04-10

    A fundamental understanding of the rich electronic structures of electronically doped semiconductor nanocrystals is vital for assessing the utility of these materials for future applications from solar cells to redox catalysis. Here, we examine the use of magnetic circular dichroism (MCD) spectroscopy to probe the infrared localized surface plasmon resonances of p-Cu2-xSe, n-ZnO, and tin-doped In2O3 (n-ITO) nanocrystals. We demonstrate that the MCD spectra of these nanocrystals can be analyzed by invoking classical cyclotron motions of their excess charge carriers, with experimental MCD signs conveying the carrier types (n or p) and experimental MCD intensities conveying the cyclotron splitting magnitudes. The experimental cyclotron splittings can then be used to quantify carrier effective masses (m*), with results that agree with bulk in most cases. MCD spectroscopy thus offers a unique measure of m* in free-standing colloidal semiconductor nanocrystals, raising new opportunities to investigate the influence of various other synthetic or environmental parameters on this fundamentally important electronic property.

  15. Self-Organized Nanostructures in Wide-Band-Gap II-VI's

    NASA Astrophysics Data System (ADS)

    Furdyna, J. K.

    1997-03-01

    We describe three distinct categories of self-organized phenomena observed in the MBE growth of II-VI semiconductors. First, we describe self-organized formation of compositionally-modulated ZnSe_1-xTex superlattices. Periodic modulation of composition x in this alloy occurs spontaneously when Zn, Se, and Te fluxes are simultaneously incident on vicinal (100) GaAs substrates. The period is highly regular, with typical values between 20Åand 40Åand is long-range in character. Second, we discuss formation of self-assembled CdSe quantum dots (QDs) on ZnSe, or on ZnSe-based alloys (e.g., Zn_1-xCd_xSe, Zn_1-xMn_xSe). We note that the relationship of CdSe and ZnSe is a close parallel, in terms of strain, to that of InAs and GaAs. Since the self-organized formation of QDs is expected to be strongly sensitive to strain as well as to element-specific chemistries, comparison of CdSe dots on ZnSe with the already well estabilis! he! d InAs quantum dots on GaAs should be especially interesting. Finally, we discuss self-organized formation of interesting surface morphologies observed in the growth of MnSe on GaAs. Although not strictly a II-VI compound, MnSe is of interest in the II-VI context because it readily forms alloys (e.g., Zn_1-xMn_xSe) or superlattices (e.g., ZnSe/MnSe) with the canonical II-VIs. In the MBE process described here MnSe, when grown on GaAs or ZnSe, forms high-quality monocrystalline layers with NaCl structure. The surfaces of these layers display interesting regular patterns on the mesoscopic scale, that can be controlled by growth conditions. It is possible that such patterns can serve as "templates" for deposition of II-VI quantum wire networks. Collaborators: S.P. Ahrenkiel, M. Al-Jassim, A.-L. Barabasi, M. Dobrowolska, S. Lee, H. Luo, J.L. Merz, Q. Shen, P.D. Wang

  16. Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Urbańczyk, A.; Hamhuis, G. J.; Nötzel, R.

    2011-05-01

    We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.

  17. Universal Near-Infrared and Mid-Infrared Optical Modulation for Ultrafast Pulse Generation Enabled by Colloidal Plasmonic Semiconductor Nanocrystals.

    PubMed

    Guo, Qiangbing; Yao, Yunhua; Luo, Zhi-Chao; Qin, Zhipeng; Xie, Guoqiang; Liu, Meng; Kang, Jia; Zhang, Shian; Bi, Gang; Liu, Xiaofeng; Qiu, Jianrong

    2016-09-21

    Field effect relies on the nonlinear current-voltage relation in semiconductors; analogously, materials that respond nonlinearly to an optical field can be utilized for optical modulation. For instance, nonlinear optical (NLO) materials bearing a saturable absorption (SA) feature an on-off switching behavior at the critical pumping power, thus enabling ultrafast laser pulse generation with high peak power. SA has been observed in diverse materials preferably in its nanoscale form, including both gaped semiconductor nanostructures and gapless materials like graphene; while the presence of optical bandgap and small carrier density have limited the active spectral range and intensity. We show here that solution-processed plasmonic semiconductor nanocrystals exhibit superbroadband (over 400 THz) SA, meanwhile with large modulation depth (∼7 dB) and ultrafast recovery (∼315 fs). Optical modulators fabricated using these plasmonic nanocrystals enable mode-locking and Q-switching operation across the near-infrared and mid-infrared spectral region, as exemplified here by the pulsed lasers realized at 1.0, 1.5, and 2.8 μm bands with minimal pulse duration down to a few hundreds of femtoseconds. The facile accessibility and superbroadband optical nonlinearity offered by these nonconventional plasmonic nanocrystals may stimulate a growing interest in the exploiting of relevant NLO and photonic applications.

  18. Mn(2+)-Doped Lead Halide Perovskite Nanocrystals with Dual-Color Emission Controlled by Halide Content.

    PubMed

    Liu, Wenyong; Lin, Qianglu; Li, Hongbo; Wu, Kaifeng; Robel, István; Pietryga, Jeffrey M; Klimov, Victor I

    2016-11-16

    Impurity doping has been widely used to endow semiconductor nanocrystals with novel optical, electronic, and magnetic functionalities. Here, we introduce a new family of doped NCs offering unique insights into the chemical mechanism of doping, as well as into the fundamental interactions between the dopant and the semiconductor host. Specifically, by elucidating the role of relative bond strengths within the precursor and the host lattice, we develop an effective approach for incorporating manganese (Mn) ions into nanocrystals of lead-halide perovskites (CsPbX3, where X = Cl, Br, or I). In a key enabling step not possible in, for example, II-VI nanocrystals, we use gentle chemical means to finely and reversibly tune the nanocrystal band gap over a wide range of energies (1.8-3.1 eV) via postsynthetic anion exchange. We observe a dramatic effect of halide identity on relative intensities of intrinsic band-edge and Mn emission bands, which we ascribe to the influence of the energy difference between the corresponding transitions on the characteristics of energy transfer between the Mn ion and the semiconductor host.

  19. CdSe colloidal nanocrystals monolithically integrated in a pseudomorphic semiconductor epilayer

    SciTech Connect

    Larramendi, Erick M.; Schoeps, Oliver; Woggon, Ulrike; Artemyev, Mikhail V.; Schikora, Detlef; Lischka, Klaus

    2013-01-14

    As optically active emitters in a semiconductor matrix, core/shell and bare CdSe colloidal nanocrystals (CNCs) were monolithically incorporated in ZnSe pseudomorphic epilayers by molecular beam epitaxy (MBE). A suspension of wet chemically synthesized CNCs was sprayed ex-situ over a pseudomorphic ZnSe/GaAs(001) heterostructure using a nebulizer. Subsequently, the matrix material growth was resumed to form a capping layer by a slow MBE growth mode. Structural investigations show high crystalline quality and pseudomorphic epitaxial character of the whole hybrid CNC-matrix structure. The core/shell CNCs remain optically active following the embedding process. Their emission is blue shifted without a significant change on the spectral shape, and shows the same temperature dependence as that of the free exciton peak energy in zinc-blende CdSe at temperatures above 80 K. Our optical characterization of the samples showed that the embedded CNCs were stable and that the structure of the host was preserved. These results are encouraging for the fabrication of more complex optoelectronic devices based on CNCs.

  20. II-VI compounds 1985; Proceedings of the Second International Conference, Aussois, France, March 4-8, 1985

    NASA Astrophysics Data System (ADS)

    Marfaing, Y.; Triboulet, R.; Lunn, B.; Mullin, J. B.

    1985-08-01

    Among the topics considered concerning II-VI compounds are growth of low resistivity high-quality ZnSe, ZnS films by low-pressure metal-organic vapor phase epitaxy growth of Cd(x)Zn(1-x)S, growth of high-purity ZnSe by sublimation traveling-heater method (THM) and the characteristics of the Y and Z deep level emission line, properties of CdTe crystals grown by THM using Cd as the solvent, and liquid-phase epitaxy growth and characterization of 1.3-micron (Hg, Cd)Te layers. Also considered are the self-consistent electronic structure of vacancies in semiconductors, defects in cadmium selenide, luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxy, and photoluminescence of Cd-rich Hg(1-x)Cd(x)Te alloys with x = 0.7-1.0. Additional topics discussed are optically detected magnetic resonance studies of recombination emission in II-VI compounds, X-ray photoemission spectroscopy and magnetotransport studies on the surface of CdHgTe, cadmium mercury telluride infrared detectors, and electron beam-pumped II-VI lasers.

  1. Can high pressure I-II transitions in semiconductors be affected by plastic flow and nanocrystal precipitation in phase I?

    NASA Astrophysics Data System (ADS)

    Weinstein, B. A.; Lindberg, G. P.

    Pressure-Raman spectroscopy in ZnSe and ZnTe single crystals reveals that Se and Te nano-crystals (NCs) precipitate in these II-VI hosts for pressures far below their I-II phase transitions. The inclusions are evident from the appearance and negative pressure-shift of the A1 Raman peaks of Se and Te (trigonal phase). The Se and Te NCs nucleate at dislocations and grain boundaries that arise from pressure-induced plastic flow. This produces chemical and structural inhomogeneities in the zincblende phase of the host. At substantially higher pressures, the I-II transition proceeds in the presence of these inhomogenities. This can affect the transition's onset pressure Pt and width ΔPt, and the occurrence of metastable phases along the transition path. Precipitation models in metals show that nucleation of inclusions depends on the Peierls stress τp and a parameter α related to the net free energy gained on nucleation. For favorable values of τp and α, NC precipitation at pressures below the I-II transition could occur in other compounds. We propose criteria to judge whether this is likely based on the observed ranges of τp in the hosts, and estimates of α derived from the cohesive energy densities of the NC materials. One finds trends that can serve as a useful guide, both to test the proposed criteria, and to decide when closer scrutiny of phase transition experiments is warranted, e.g., in powders where high dislocation densities are initially created

  2. Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications

    PubMed Central

    2015-01-01

    Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics. By tuning the number of Mn2+ ions per dot from ∼500 to 20 in Mn2+ doped ZnSe nanocrystals (Mn:ZnSe d-dots), the single-exponential PL decay lifetime was continuously tuned from ∼50 to 1000 μs. A synthetic scheme was further developed for uniform and epitaxial growth of thick ZnS shell, ∼7 monolayers. The resulting Mn:ZnSe/ZnS core/shell d-dots were found to be essential for necessary environmental durability of the PL properties, both steady-state and transient ones, for the d-dot emitters. These characteristics combined with intense absorption and high PL quantum yields (70 ± 5%) enabled greatly simplified schemes for various applications of PL lifetime multiplexing using Mn:ZnSe/ZnS core/shell d-dots. PMID:27163024

  3. The interface effect on the band offset of semiconductor nanocrystals with type-I core-shell structure.

    PubMed

    Zhu, Ziming; Ouyang, Gang; Yang, Guowei

    2013-04-21

    In order to pursue the interface effect on the band offset of the semiconductor nanocrystals with the type-I core-shell structure, we have established a theoretical model to elucidate the underlying mechanism based on the atomic-bond-relaxation consideration and continuum mechanics. It was found that the size-dependent interface bond-nature-factor of the core-shell nanocrystals can be deduced on the basis of the proposed model. Taking the typical CdSe-ZnSe nanostructure as an example, we showed that the theoretical results were consistent with the experimental observations. These investigations provided a useful guide in opening up the possibility to engineer nanodevices with special optoelectronic properties.

  4. NMR studies of the surface structure and dynamics of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sachleben, Joseph R.; Wooten, E. Wrenn; Emsley, Lyndon; Pines, Alexander; Colvin, Vicki L.; Alivisatos, A. Paul

    1992-10-01

    1H NMR studies of thiophenol capping groups on cadmium sulfide nanocrystals demonstrate that the coverage of the capping molecule depends on the size of the nanocrystal. Data are presented which show that as the size of the nanocrystal increases, the coverage of thiophenol decreases. In addition, information about the overall tumbling of the nanocrystal and the motion of the capping groups relative to the surface can be obtained from linewidth studies, indicating that the rotation of the capping groups is hindered in the smaller nanocrystals ( r≈12 Å) and becomes less so in larger nanocrystals ( r≈20 Å). The coverage data are related to the electronic properties of this important class of compounds.

  5. Contact Radius and the Insulator-Metal Transition in Films Comprised of Touching Semiconductor Nanocrystals.

    PubMed

    Lanigan, Deanna; Thimsen, Elijah

    2016-07-26

    Nanocrystal assemblies are being explored for a number of optoelectronic applications such as transparent conductors, photovoltaic solar cells, and electrochromic windows. Majority carrier transport is important for these applications, yet it remains relatively poorly understood in films comprised of touching nanocrystals. Specifically, the underlying structural parameters expected to determine the transport mechanism have not been fully elucidated. In this report, we demonstrate experimentally that the contact radius, between touching heavily doped ZnO nanocrystals, controls the electron transport mechanism. Spherical nanocrystals are considered, which are connected by a circular area. The radius of this circular area is the contact radius. For nanocrystals that have local majority carrier concentration above the Mott transition, there is a critical contact radius. If the contact radius between nanocrystals is less than the critical value, then the transport mechanism is variable range hopping. If the contact radius is greater than the critical value, the films display behavior consistent with metallic electron transport.

  6. Nanocrystal synthesis

    SciTech Connect

    Tisdale, William; Prins, Ferry; Weidman, Mark; Beck, Megan

    2016-11-01

    A method of preparing monodisperse MX semiconductor nanocrystals can include contacting an M-containing precursor with an X donor to form a mixture, where the molar ratio between the M containing precursor and the X donor is large. Alternatively, if additional X donor is added during the reaction, a smaller ratio between the M containing precursor and the X donor can be used to prepare monodisperse MX semiconductor nanocrystals.

  7. Magnetic Fluorescent Delivery Vehicle using Uniform Mesoporous Silica Spheres Embedded with Monodisperse Magnetic and Semiconductor Nanocrystals

    SciTech Connect

    Kim, Jaeyun; Lee, Ji Eun; Lee, Jinwoo; Yu, Jung Ho; Kim, Byoung Chan; An, Kwangjin; Hwang, Yosun; Shin, Chae-Ho; Park, Je-Geun; Kim, Jungbae; Hyeon, Taeghwan

    2006-01-25

    Uniform sized colloidal nanocrystals have attracted much attention, because of their unique magnetic and optical properties, as compared with those of their bulk counterparts. Especially magnetic nanocrystals and quantum dots have been intensively pursued for biomedical applications such as contrast enhancement agents in magnetic resonance imaging, magnetic carriers for drug delivery system, biological labeling and diagnostics. Due to their large pore sizes and high surface areas, mesoporous materials and its composites with nanocrystals have attracted considerable attention. In order to use the nanocrystals as functional delivery carriers and catalytic supports, nanocrystals coated with porous silica shells are desirable. Herein, we report a synthetic procedure for the fabrication of monodisperse nanocrystals embedded in uniform pore-sized mesoporous silica spheres. As a representative example, we synthesized monodisperse magnetite (Fe3O4) nanocrystals embedded in mesoporous silica spheres and both magnetite nanocrystals and CdSe/ZnS quantum dots embedded in mesoporous silica spheres. Furthermore, these mesoporous silica spheres were applied to the uptake and controlled release of drugs.

  8. Spectroscopic characterization of Fe2+-doped II-VI ternary and quaternary mid-IR laser active powders

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Martyshkin, D. V.; Fedorov, V. V.; Mirov, S. B.

    2014-02-01

    We report on spectroscopic characterization of laser active powders based on iron doped II-VI ternary and quaternary semiconductors for mid-IR laser applications. Iron doped Cd1-x MnxTe, Cd1-x MnxS, Cd1-xMnxSe, Cd0.5Mn0.5S0.5Se0.5 , Cd1-xZnxTe compounds with x=0.5-0.25, were prepared by using thermo diffusion technique. The starting binary powders were mixed in the appropriate molar ratios, sealed in evacuated (10-3 Torr) quartz ampoules, and annealed at 800-1000oC for several days. Samples composition, integrity, and grain size were characterized by micro-Raman and Xray diffraction and revealed a variation of the crystal field parameters depending on powder composition. Fe2+ photoluminescence was characterized by spectral band position (normalized with respect to the detection platform spectral sensitivity) and lifetime at different temperatures, enabling calculation of the absorption and emission crosssections. Practical utility of the developed powders was demonstrated by a room temperature random lasing of iron doped Cd0.5Zn0.5Te powders over 5620-6020 nm spectral range pumped by a 2.94 μm radiation of a Q-switched Er:YAG laser. In summary, the following has been accomplished: (1) It was demonstrated that laser active Fe2+ doped ternary and quaternary II-VI materials can be produced by simple annealing of the commercially available binary powders omitting expensive and complicated crystal growth processes; (2) It is possible to effectively shift PL of Fe2+ in II-VI host materials towards shorter or longer wavelength by varying composition, type and amount of the second cation in ternary II-VI materials; (3) Major spectroscopic characteristics of Fe2+ doped II-VI ternary and quaternary compounds were obtained and their practical utility for mid-IR lasing demonstrated.

  9. Fluorescence enhancement, blinking suppression, and gray states of individual semiconductor nanocrystals close to gold nanoparticles.

    PubMed

    Ma, Xuedan; Tan, Hua; Kipp, Tobias; Mews, Alf

    2010-10-13

    The optical properties of nanocrystals are drastically changed by the interaction with adjacent metal nanoparticles. By time-resolved photoluminescence spectroscopy, we investigate CdSe multishell nanocrystals coupled to self-assembled films of Au nanoparticles. The distance between emitter and metal is adjusted by coating the nanocrystals with silica shells. These NCs showed increased fluorescence intensity, a decreased fluorescence lifetime, strong blinking suppression, and fluorescence from gray states. These observations can be explained by the metal particle induced change of excitation and recombination rates.

  10. II-VI Materials-Based High Performance Intersubband Devices

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind Pawan

    Mid-infrared (mid-IR) light is of vital technological importance because of its application in trace-gas absorption spectroscopy, imaging, free-space communication or infrared countermeasures. Thus the ability to generate and detect mid-IR light at low cost and preferably, at room temperature is of utmost importance. High performance quantum cascade (QC) lasers - mid-IR light sources based on optical transitions in thin quantum wells, and intersubband infrared detectors - namely the quantum well infrared photodetectors (QWIPs) and quantum cascade detectors (QCDs), have rapidly advanced, due to excellent material quality of III-V materials. In spite of this tremendous success, there lie challenges such as lack of efficient short-wavelength emitters or broadband detectors - challenges that arise from intrinsic materials properties. As a central theme in this thesis, we look at a new class of materials, the II-VI based ZnCdSe/ZnCdMgSe system, to close technological gaps and develop high performance infrared light sources and detectors in the entire mid-IR regime. To that end, we first demonstrate the flexibility that the combination of II-VI materials and band structure engineering allows by developing various QWIPs, QCDs and QC emitters at different wavelengths, not easily achieved by other materials. The performance of these first-of-their-kind detectors is already comparable to existing commercial solutions. To fully realize the potential of this new material system, we also developed a room-temperature broadband infrared detector detecting between 3 and 6 mum with record responsivity. With this technology, it is now possible to monolithically integrate high performance mid-IR lasers and detectors for on-chip applications. One of the challenges with all intersubband detectors is that they do not absorb normally incident light, like most conventional detectors. In order to make intersubband detectors attractive to commercial exploration, we develop a novel method to

  11. Electronic grade and flexible semiconductor film employing oriented attachment of colloidal ligand-free PbS and PbSe nanocrystals at room temperature

    NASA Astrophysics Data System (ADS)

    Shanker, G. Shiva; Swarnkar, Abhishek; Chatterjee, Arindom; Chakraborty, S.; Phukan, Manabjyoti; Parveen, Naziya; Biswas, Kanishka; Nag, Angshuman

    2015-05-01

    Electronic grade semiconductor films have been obtained via the sintering of solution processed PbS and PbSe nanocrystals at room temperature. Prior attempts to achieve similar films required the sintering of nanocrystals at higher temperatures (>350 °C), which inhibits the processing of such films on a flexible polymer substrate, and it is also expensive. We reduced the sintering temperature by employing two important strategies: (i) use of ligand-free nanocrystals and (ii) oriented attachment of nanocrystals. Colloidal ligand-free PbS and PbSe nanocrystals were synthesized at 70 °C with high yield (~70%). However, these nanocrystals start to agglomerate with time in formamide, and upon the removal of the solvation energy, nanocrystals undergo oriented attachment, forming larger elongated crystals. PbS and PbSe nanocrystal films made on both glass and flexible substrates at room temperature exhibit Ohmic behavior with optimum DC conductivities of 0.03 S m-1 and 0.08 S m-1, respectively. Mild annealing of the films at 150 °C increases the conductivity values to 1.1 S m-1 and 137 S m-1 for PbS and PbSe nanocrystal films, respectively. AC impedance was measured to distinguish the contributions from grain and grain boundaries to the charge transport mechanism. Charge transport properties remain similar after the repeated bending of the film on a flexible polymer substrate. Reasonably high thermoelectric Seebeck coefficients of 600 μV K-1 and 335 μV K-1 for PbS and PbSe nanocrystal pellets, respectively, were obtained at room temperature.Electronic grade semiconductor films have been obtained via the sintering of solution processed PbS and PbSe nanocrystals at room temperature. Prior attempts to achieve similar films required the sintering of nanocrystals at higher temperatures (>350 °C), which inhibits the processing of such films on a flexible polymer substrate, and it is also expensive. We reduced the sintering temperature by employing two important strategies

  12. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  13. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  14. Hierarchial Junction Solar Cells Based on Hyper-Branched Semiconductor Nanocrystals

    DTIC Science & Technology

    2009-06-30

    that copper (I) sulfide and iron disulfide pyrite generated a much broader impact for photovoltaic solar cell applications. First, a simple low...pure phase iron disulfide pyrite nanocrystals with high purity through a surfactant-assisted hydrothermal reaction. These nanocrystals represent new...and iron disulfide pyrite (FeS2) for photovoltaic solar cell application. First, we demonstrated a simple low temperature solution phase synthesis of

  15. Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Horváth, Zs. J.; Basa, P.; Jászi, T.; Molnár, K. Z.; Pap, A. E.; Molnár, Gy.

    2013-03-01

    The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance-voltage (C-V) and memory window measurements and by simulation. Both the width of hysteresis of C-V characteristics and the injected charge exhibited exponential dependence on the charging voltage at moderate voltage values, while at high voltages the width of hysteresis of C-V characteristics and the injected charge exhibited saturation. The memory window for reference MNS structure without nanocrystals was wider than that for reference MNOS structures. The presence of nanocrystals enhanced the charging behavior of MNOS structures, but in MNS structures nanocrystals exhibited the opposite effect. The main conclusion is that the presence of nanocrystals or other deep levels close to the Si surface enhances the charge injection properties due to the increased tunneling probability, but nanocrystals or other deep levels located far from the Si surface in the nitride layer do not enhance, but even can degrade the charging behavior by the capture of charge carriers.

  16. Electronic grade and flexible semiconductor film employing oriented attachment of colloidal ligand-free PbS and PbSe nanocrystals at room temperature.

    PubMed

    Shanker, G Shiva; Swarnkar, Abhishek; Chatterjee, Arindom; Chakraborty, S; Phukan, Manabjyoti; Parveen, Naziya; Biswas, Kanishka; Nag, Angshuman

    2015-05-28

    Electronic grade semiconductor films have been obtained via the sintering of solution processed PbS and PbSe nanocrystals at room temperature. Prior attempts to achieve similar films required the sintering of nanocrystals at higher temperatures (>350 °C), which inhibits the processing of such films on a flexible polymer substrate, and it is also expensive. We reduced the sintering temperature by employing two important strategies: (i) use of ligand-free nanocrystals and (ii) oriented attachment of nanocrystals. Colloidal ligand-free PbS and PbSe nanocrystals were synthesized at 70 °C with high yield (∼70%). However, these nanocrystals start to agglomerate with time in formamide, and upon the removal of the solvation energy, nanocrystals undergo oriented attachment, forming larger elongated crystals. PbS and PbSe nanocrystal films made on both glass and flexible substrates at room temperature exhibit Ohmic behavior with optimum DC conductivities of 0.03 S m(-1) and 0.08 S m(-1), respectively. Mild annealing of the films at 150 °C increases the conductivity values to 1.1 S m(-1) and 137 S m(-1) for PbS and PbSe nanocrystal films, respectively. AC impedance was measured to distinguish the contributions from grain and grain boundaries to the charge transport mechanism. Charge transport properties remain similar after the repeated bending of the film on a flexible polymer substrate. Reasonably high thermoelectric Seebeck coefficients of 600 μV K(-1) and 335 μV K(-1) for PbS and PbSe nanocrystal pellets, respectively, were obtained at room temperature.

  17. Size- and Shape-dependent efficiency of PbSe nanocrystal and nanowire doped organic semiconductor photovoltaics

    NASA Astrophysics Data System (ADS)

    Li, Wenting; Murray, Christopher; Kagan, Cherie

    2009-03-01

    Hybrid solar cells based on nanocomposite organic semiconductors and IR sensitive PbSe nanocrystals (NCs) and nanowires (NWs) are fabricated and serve as a model system to test in PV devices. Wet chemical routes are used to synthesize PbSe NCs tunable in size, from 6 to 12nm in diameter, and in shape by tailoring the reaction temperature and selection of surfactants. PbSe NWs are also synthesized through oriented attachment in solution of NC building blocks to form straight, zigzag, helical, and branched NWs. We integrate PbSe NCs and NWs with the organic semiconductors P3HT and pentacene. We are able to fabricate organic-inorganic bulk heterojunctions with pentacene using a solution-processable precursor that is thermally converted to pentacene. We investigate the role of the organic semiconductor pentacene in the solar cell, both as a conductivity booster and as a more stable alternative to P3HT. We find that ligand exchange significantly increases photocurrent by replacing oleic acid ligands used in NC synthesis with shorter pyridine or octylamine ligands. We also report that tailoring the size and shape of the NCs and controlling the deposition and annealing conditions of the nanocomposites enhances the solar cell performance.

  18. Photovoltaic nanopillar radial junction diode architecture enhanced by integrating semiconductor quantum dot nanocrystals as light harvesters

    NASA Astrophysics Data System (ADS)

    Güzeltürk, Burak; Mutlugün, Evren; Wang, Xiaodong; Pey, Kin Leong; Demir, Hilmi Volkan

    2010-08-01

    We propose and demonstrate colloidal quantum dot hybridized, radial p-n junction based, nanopillar solar cells with photovoltaic performance enhanced by intimately integrating nanocrystals to serve as light harvesting agents around the light trapping pillars. By furnishing Si based nanopillar photovoltaic diodes with CdSe quantum dots, we experimentally showed up to sixfold enhancement in UV responsivity and ˜13% enhancement in overall solar conversion efficiency. The maximum responsivity enhancement achieved by incorporation of nanocrystals in the nanopillar architecture is found to be spectrally more than four times larger than the responsivity enhancement obtained using planar architecture of the same device.

  19. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  20. Seed-induced growth of flower-like Au-Ni-ZnO metal-semiconductor hybrid nanocrystals for photocatalytic applications.

    PubMed

    Chen, Yuanzhi; Zeng, Deqian; Cortie, Michael B; Dowd, Annette; Guo, Huizhang; Wang, Junbao; Peng, Dong-Liang

    2015-03-25

    The combination of metal and semiconductor components in nanoscale to form a hybrid nanocrystal provides an important approach for achieving advanced functional materials with special optical, magnetic and photocatalytic functionalities. Here, a facile solution method is reported for the synthesis of Au-Ni-ZnO metal-semiconductor hybrid nanocrystals with a flower-like morphology and multifunctional properties. This synthetic strategy uses noble and magnetic metal Au@Ni nanocrystal seeds formed in situ to induce the heteroepitaxial growth of semiconducting ZnO nanopyramids onto the surface of metal cores. Evidence of epitaxial growth of ZnO{0001} facets on Ni {111} facets is observed on the heterojunction, even though there is a large lattice mismatch between the semiconducting and magnetic components. Adjustment of the amount of Au and Ni precursors can control the size and composition of the metal core, and consequently modify the surface plasmon resonance (SPR) and magnetic properties. Room-temperature superparamagnetic properties can be achieved by tuning the size of Ni core. The as-prepared Au-Ni-ZnO nanocrystals are strongly photocatalytic and can be separated and re-cycled by virtue of their magnetic properties. The simultaneous combination of plasmonic, semiconducting and magnetic components within a single hybrid nanocrystal furnishes it multifunctionalities that may find wide potential applications.

  1. Detection Techniques for Biomolecules using Semi-Conductor Nanocrystals and Magnetic Beads as Labels

    NASA Astrophysics Data System (ADS)

    Chatterjee, Esha

    Continued interest in the development of miniaturized and portable analytical platforms necessitates the exploration of sensitive methods for the detection of trace analytes. Nanomaterials, on account of their unique physical and chemical properties, are not only able to overcome many limitations of traditional detection reagents but also enable the exploration of many new signal transduction technologies. This dissertation presents a series of investigations of alternative detection techniques for biomolecules, involving the use of semi-conductor nanocrystals and magnetic beads as labels. Initial research focused on the development of quantum dot-encapsulating liposomes as a novel fluorescent label for immunoassays. This hybrid nanomaterial was anticipated to overcome the drawbacks presented by traditional fluorophores as well as provide significant signal amplification. Quantum dot-encapsulating liposomes were synthesized by the method of thin film hydration and characterized. The utility of these composite nanostructures for bioanalysis was demonstrated. However, the longterm instability of the liposomes hampered quantitative development. A second approach for assay development exploited the ability of gold nanoparticles to quench the optical signals obtained from quantum dots. The goal of this study was to demonstrate the feasibility of using aptamer-linked nanostructures in FRET-based quenching for the detection of proteins. Thrombin was used as the model analyte in this study. Experimental parameters for the assay were optimized. The assay simply required the mixing of the sample with the reagents and could be completed in less than an hour. The limit of detection for thrombin by this method was 5 nM. This homogeneous assay can be easily adapted for the detection of a wide variety of biochemicals. The novel technique of ferromagnetic resonance generated in magnetic bead labels was explored for signal transduction. This inductive detection technique lends

  2. Quantum dot sensitized solar cells. A tale of two semiconductor nanocrystals: CdSe and CdTe.

    PubMed

    Bang, Jin Ho; Kamat, Prashant V

    2009-06-23

    CdSe and CdTe nanocrystals are linked to nanostructured TiO2 films using 3-mercaptopropionic acid as a linker molecule for establishing the mechanistic aspects of interfacial charge transfer processes. Both these quantum dots are energetically capable of sensitizing TiO2 films and generating photocurrents in quantum dot solar cells. These two semiconductor nanocrystals exhibit markedly different external quantum efficiencies ( approximately 70% for CdSe and approximately 0.1% for CdTe at 555 nm). Although CdTe with a more favorable conduction band energy (E(CB) = -1.0 V vs NHE) is capable of injecting electrons into TiO2 faster than CdSe (E(CB) = -0.6 V vs NHE), hole scavenging by a sulfide redox couple remains a major bottleneck. The sulfide ions dissolved in aqueous solutions are capable of scavenging photogenerated holes in photoirradiated CdSe system but not in CdTe. The anodic corrosion and exchange of Te with S dominate the charge transfer at the CdTe interface. Factors that dictate the efficiency and photostability of CdSe and CdTe quantum dots are discussed.

  3. Wurtzite Cu2ZnSnS4 nanocrystals: a novel quaternary semiconductor.

    PubMed

    Lu, Xiaotang; Zhuang, Zhongbin; Peng, Qing; Li, Yadong

    2011-03-21

    A new wurtzite phase Cu(2)ZnSnS(4) was discovered and the corresponding nanocrystals have been successfully synthesized. They have been characterized in detail and showed the photoelectric response, which demonstrated their potential in the application of photovoltaic devices.

  4. Controlled growth of semiconductor nanofilms within TiO₂ nanotubes for nanofilm sensitized solar cells.

    PubMed

    Zheng, Xiaojia; Yu, Dongqi; Xiong, Feng-Qiang; Li, Mingrun; Yang, Zhou; Zhu, Jian; Zhang, Wen-Hua; Li, Can

    2014-04-28

    Anodized TiO2 nanotubes were decorated by II-VI semiconductor nanofilms via atomic layer deposition (ALD) and further employed as photoanodes of semiconductor nanofilm sensitized solar cells (NFSCs) exhibiting superior photovoltaic performance.

  5. Multi-crystalline II-VI based multijunction solar cells and modules

    DOEpatents

    Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

    2015-06-30

    Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

  6. Cation coordination reactions on nanocrystals: surface/interface, doping control and advanced photocatalysis applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Zhang, Jiatao

    2016-10-01

    Abstract: Including the shape and size effect, the controllable doping, hetero-composite and surface/interface are the prerequisite of colloidal nanocrystals for exploring their optoelectronic properties, such as fluorescence, plasmon-exciton coupling, efficient electron/hole separation, and enhanced photocatalysis applications. By controlling soft acid-base coordination reactions between cation molecular complexes and colloidal nanocrystals, we showed that chemical thermodynamics could drive nanoscale monocrystalline growth of the semiconductor shell on metal nano-substrates and the substitutional heterovalent doping in semiconductor nanocrystals. We have demonstrated evolution of relative position of Au and II-VI semiconductor in Au-Semi from symmetric to asymmetric configuration, different phosphines initiated morphology engineering, oriented attachment of quantum dots into micrometer nanosheets with synergistic control of surface/interface and doing, which can further lead to fine tuning of plasmon-exciton coupling. Therefore, different hydrogen photocatalytic performance, Plasmon enhanced photocatalysis properties have been achieved further which lead to the fine tuning of plasmon-exciton coupling. Substitutional heterovalent doping here enables the tailoring of optical, electronic properties and photocatalysis applications of semiconductor nanocrystals because of electronic impurities (p-, n-type doping) control. References: (1) J. Gui, J. Zhang*, et al. Angew. Chem. Int. Ed. 2015, 54, 3683. (2) Q. Zhao, J. Zhang*, etc., Adv. Mater. 2014, 26, 1387. (3) J. Liu, Q. Zhao, S. G. Wang*, J. Zhang*, etc., Adv. Mater. 2015, 27-2753-2761. (4) H. Qian, J. Zhang*, etc., NPG Asia Mater. (2015) 7, e152. (5) M. Ji, M. Xu, etc., J. Zhang*, Adv. Mater. 2016, in proof. (6) S. Yu, J. T. Zhang, Y. Tang, M. Ouyang*, Nano Lett. 2015, 15, 6282-6288. (7) J. Zhang, Y. Tang, K. Lee and M. Ouyang*, Science 2010, 327, 1634. (8) J. Zhang, Y. Tang, K. Lee, M. Ouyang*, Nature 2010, 466

  7. Crafting semiconductor organic-inorganic nanocomposites via placing conjugated polymers in intimate contact with nanocrystals for hybrid solar cells.

    PubMed

    Zhao, Lei; Lin, Zhiqun

    2012-08-22

    Semiconductor organic-inorganic hybrid solar cells incorporating conjugated polymers (CPs) and nanocrystals (NCs) offer the potential to deliver efficient energy conversion with low-cost fabrication. The CP-based photovoltaic devices are complimented by an extensive set of advantageous characteristics from CPs and NCs, such as lightweight, flexibility, and solution-processability of CPs, combined with high electron mobility and size-dependent optical properties of NCs. Recent research has witnessed rapid advances in an emerging field of directly tethering CPs on the NC surface to yield an intimately contacted CP-NC nanocomposite possessing a well-defined interface that markedly promotes the dispersion of NCs within the CP matrix, facilitates the photoinduced charge transfer between these two semiconductor components, and provides an effective platform for studying the interfacial charge separation and transport. In this Review, we aim to highlight the recent developments in CP-NC nanocomposite materials, critically examine the viable preparative strategies geared to craft intimate CP-NC nanocomposites and their photovoltaic performance in hybrid solar cells, and finally provide an outlook for future directions of this extraordinarily rich field.

  8. Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects.

    PubMed

    Luo, Jun-Wei; Franceschetti, Alberto; Zunger, Alex

    2008-10-01

    Direct carrier multiplication (DCM) occurs when a highly excited electron-hole pair decays by transferring its excess energy to the electrons rather than to the lattice, possibly exciting additional electron-hole pairs. Atomistic electronic structure calculations have shown that DCM can be induced by electron-hole Coulomb interactions, in an impact-ionization-like process whose rate is proportional to the density of biexciton states rho XX. Here we introduce a DCM "figure of merit" R2(E) which is proportional to the ratio between the biexciton density of states rhoXX and the single-exciton density of states rhoX, restricted to single-exciton and biexciton states that are coupled by Coulomb interactions. Using R2(E), we consider GaAs, InAs, InP, GaSb, InSb, CdSe, Ge, Si, and PbSe nanocrystals of different sizes. Although DCM can be affected by both quantum-confinement effects (reflecting the underly electronic structure of the confined dot-interior states) and surface effects, here we are interested to isolate the former. To this end the nanocrystal energy levels are obtained from the corresponding bulk band structure via the truncated crystal approximation. We find that PbSe, Si, GaAs, CdSe, and InP nanocrystals have larger DCM figure of merit than the other nanocrystals. Our calculations suggest that high DCM efficiency requires high degeneracy of the corresponding bulk band-edge states. Interestingly, by considering band structure effects we find that as the dot size increases the DCM critical energy E0 (the energy at which R2(E) becomes >or=1) is reduced, suggesting improved DCM. However, whether the normalized E0/epsilong increases or decreases as the dot size increases depends on dot material.

  9. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    DTIC Science & Technology

    2007-03-01

    nanocrystals……………………………………… 7 ZnSe and ZnS nanowires and nanorods, ZnO…………..……………………………… 9 Conjugated polymers in nanostructured composite materials...treatments and nanocrystal size. Compared to nanocrystalline Group II-VI compounds CdSe and CdS, Group III-V semiconductors, such as InP, GaP, InN, or...molecular level are being used to facilitate their integration into host matrices and devices. ZnSe and ZnS nanowires and nanorods, ZnO

  10. Tuning optoelectronic properties of small semiconductor nanocrystals through surface ligand chemistry

    NASA Astrophysics Data System (ADS)

    Lawrence, Katie N.

    Semiconductor nanocrystals (SNCs) are a class of material with one dimension <100 nm, which display size, shape, and composition dependent photophysical (absorption and emission) properties. Ultrasmall SNCs are a special class of SNCs whose diameter is <3.0 nm and are strongly quantum confined leading to a high surface to volume ratio. Therefore, their electronic and photophysical properties are fundamentally dictated by their surface chemistry, and as such, even a minute variation of the surface ligation can have a colossal impact on these properties. Since the development of the hot injection-method by Bawendi et al., the synthetic methods of SNCs have evolved from high-temperature, highly toxic precursors to low-temperature, relatively benign precursors over the last 25 years. Unfortunately, optimization of their synthetic methods by appropriate surface ligation is still deficient. The deficiency lies in the incomplete or inappropriate surface passivation during the synthesis and/or post-synthetic modification procedure, which due to the high surface to volume ratio of ultrasmall SNCs, is a significant problem. Currently, direct synthetic methods produce SNCs that are either soluble in an aqueous media or soluble in organic solvents therefore limiting their applicability. In addition, use of insulating ligands hinder SNCs' transport properties and thus their potential application in solid state devices. Appropriate choice of surface ligation can provide 1) solubility, 2) stability, and 3) facilitate exciton delocalization. In this dissertation, the effects of appropriate surface ligation on strongly quantum confined ultrasmall SNCs was investigated. Due to their high surface to volume ratio, we are able to highly control their optical and electronic properties through surface ligand modification. Throughout this dissertation, we utilized a variety of ligands (e.g. oleylamine, cadmium benzoate, and PEGn-thiolate) in order to change the solubility of the SNC as

  11. PAC and XPS studies of II-VI compounds

    NASA Astrophysics Data System (ADS)

    Swanson, M. L.; Hughes, W. C.; Austin, J. C.; Choi, S. S.

    The perturbed angular correlation (PAC) method has considerable potential for studying near-surface defects of materials on a microscopic scale, especially in combination with standard surface techniques. We have characterized the near-surface and surface regions of II-VI compounds using PAC and X-ray photoelectron spectroscopy (XPS). PAC was used to identify point defect complexes containing the radioactive In-111 probe atoms, which were diffused into Cd(0.96)Zn(0.04)Te, Cd(0.8)Mn(0.2)Te, and Hg(0.79)Cd(0.21)Te (MCT) samples under vacuum from 200 to 550 C. After the Cd(Zn)Te samples were annealed at 450 C for 30 min, 60% of the In atoms occupied unique non-cubic sites, characterized by an interaction frequency Nu(sub Q) = 60 MHz and an asymmetry parameter eta = 0.2. These sites were attributed to In-(cadmium vacancy) complexes, since this signal was eliminated by subsequent annealing in a cadmium atmosphere. Similar results were obtained for the Cd(Mn)Te samples, but the vacancy complex occurred at a lower annealing temperature. The XPS data for Cd(Mn)Te showed that its oxide characteristics differed considerably from those of CdTe. Although oxide formation of CdTe occurs very lowly after sputter cleaning, a significant Te-O layer was formed on the Cd(Mn)Te surfaces after only 10 min exposure to air. In addition, deionized water removed the native oxide completely for CdTe but not for Cd(Mn)Te. For MCT, annealing at 350 C caused the formation of two defect complexes, characterized by frequencies of 83 and 92 MHz, and eta is approximately equal 0.1. These PAC signals vanished after annealing under a mercury atmosphere, indicating that they were also due to In-vacancy complexes.

  12. Mechanochemical Solvent-Free Synthesis of Quaternary Semiconductor Cu-Fe-Sn-S Nanocrystals

    NASA Astrophysics Data System (ADS)

    Baláž, Peter; Baláž, Matej; Sayagués, María J.; Škorvánek, Ivan; Zorkovská, Anna; Dutková, Erika; Briančin, Jaroslav; Kováč, Jaroslav; Kováč, Jaroslav; Shpotyuk, Yaroslav

    2017-04-01

    In this study, we demonstrate a one-pot mechanochemical synthesis of the nanocomposite composed of stannite Cu2FeSnS4 and rhodostannite Cu2FeSn3S8 nanocrystals using a planetary ball mill and elemental precursors (Cu, Fe, Sn, S). By this approach, unique nanostructures with interesting properties can be obtained. Methods of XRD, Raman spectroscopy, UV-Vis, nitrogen adsorption, SEM, EDX, HRTEM, STEM, and SQUID magnetometry were applied. Quaternary tetragonal phases of stannite and rhodostannite with crystallite sizes 18-19 nm were obtained. The dominant Raman peaks corresponding to the tetragonal stannite structure corresponding to A-symmetry optical modes were identified in the spectra. The bandgap 1.25 eV calculated from UV-Vis absorption spectrum is very well-acceptable value for the application of the synthesized material. The SEM micrographs illustrate the clusters of particles in micron and submicron range. The formation of agglomerates is also illustrated on the TEM micrographs. Weak ferromagnetic properties of the synthesized nanocrystals were documented.

  13. Semiconductor nanocrystals functionalized with antimony telluride zintl ions for nanostructured thermoelectrics.

    PubMed

    Kovalenko, Maksym V; Spokoyny, Boris; Lee, Jong-Soo; Scheele, Marcus; Weber, Andrew; Perera, Susanthri; Landry, Daniel; Talapin, Dmitri V

    2010-05-19

    The energy efficiency of heat engines could be improved by the partial recovery of waste heat using thermoelectric (TE) generators. We show the possibility of designing nanostructured TE materials using colloidal inorganic nanocrystals functionalized with molecular antimony telluride complexes belonging to the family of Zintl ions. The unique advantage of using Zintl ions as the nanocrystal surface ligands is the possibility to convert them into crystalline metal chalcogenides, thus linking individual nanobuilding blocks into a macroscopic assembly of electronically coupled functional modules. This approach allows preserving the benefits of nanostructuring and quantum confinement while enabling facile charge transport through the interparticle boundaries. A developed methodology was applied for solution-based fabrication of nanostructured n- and p-type Bi(2-x)Sb(x)Te(3) alloys with tunable composition and PbTe-Sb(2)Te(3) nanocomposites with controlled grain size. Characterization of the TE properties of these materials showed that their Seebeck coefficients, electrical and thermal conductivities, and ZT values compared favorably with those of previously reported solution-processed TE materials.

  14. Luminescence properties of ZnS:Cu, Eu semiconductor nanocrystals synthesized by a hydrothermal process

    NASA Astrophysics Data System (ADS)

    Xin, Mei; Hu, Li-Zhong

    2013-08-01

    ZnS:Cu, Eu nanocrystals with an average diameter of ~ 80 nm are synthesized using a hydrothermal approach at 200 °C. The photoluminescence (PL) properties of the ZnS:Cu, Eu nanocrystals before and after annealing, as well as the doping form of Eu, are studied. The as-synthesized samples are characterized by X-ray diffraction, scanning electron microscopy, inductively coupled plasma-atomic emission spectrometry, and the excitation and emission spectra (PL). The results show that both Cu and Eu are indeed incorporated into the ZnS matrix. Compared with the PL spectrum of the Cu mono-doped sample, the PL emission intensity of the Cu and Eu-codoped sample increases and a peak appears at 516 nm, indicating that Eu3+ ions, which act as an impurity compensator and activator, are incorporated into the ZnS matrix, forming a donor level. Compared with the unannealed sample, the annealed one has an increased PL emission intensity and the peak position has a blue shift of 56 nm from 516 nm to 460 nm, which means that Eu3+ ions reduce to Eu2+ ions, thereby leading to the appearance of Eu2+ characteristic emission and generating effective host-to-Eu2+ energy transfer. The results indicate the potential applications of ZnS:Cu, Eu nanoparticles in optoelectronic devices.

  15. Transforming common III-V/II-VI insulating building blocks into topological heterostructure via the intrinsic electric polarization

    NASA Astrophysics Data System (ADS)

    Zunger, Alex; Zhang, Xiuwen; Abdalla, Leonardo; Liu, Qihang

    Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological heterostructure. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We demonstrate this paradigm of designing TIs from ordinary semiconductors via first-principle calculations on III-V/II-VI superlattice InSb/CdTe. We illustrate the relationship between the interfacial stability and the topological transition, finding a ``window of opportunity'' where both conditions can be optimized. This work illustrates the general principles of co-evaluation of TI functionality with thermodynamic stability as a route of identifying realistic combination of common insulators that could produce topological heterostructures. This work was supported by Basic Energy Science, MSE division (Grant DE-FG02-13ER46959).

  16. Robust photogeneration of H2 in water using semiconductor nanocrystals and a nickel catalyst.

    PubMed

    Han, Zhiji; Qiu, Fen; Eisenberg, Richard; Holland, Patrick L; Krauss, Todd D

    2012-12-07

    Homogeneous systems for light-driven reduction of protons to H(2) typically suffer from short lifetimes because of decomposition of the light-absorbing molecule. We report a robust and highly active system for solar hydrogen generation in water that uses CdSe nanocrystals capped with dihydrolipoic acid (DHLA) as the light absorber and a soluble Ni(2+)-DHLA catalyst for proton reduction with ascorbic acid as an electron donor at pH = 4.5, which gives >600,000 turnovers. Under appropriate conditions, the precious-metal-free system has undiminished activity for at least 360 hours under illumination at 520 nanometers and achieves quantum yields in water of over 36%.

  17. Carbon-shell-decorated p-semiconductor PbMoO4 nanocrystals for efficient and stable photocathode of photoelectrochemical water reduction

    NASA Astrophysics Data System (ADS)

    Wang, Ligang; Tang, Hanqin; Tian, Yang

    2016-07-01

    Photoelectrochemical (PEC) water splitting using semiconductors is a promising method for the future scalable production of renewable hydrogen fuels. The critical issues in PEC water splitting include the development of the photoelectrode materials with high efficiency and long-term stability, especially for p-type semiconductor photocathodes. Herein, we report the use of citric acid (CA) pyrolysis to prepare carbon-shell-decorated PbMoO4 (C@PbMoO4) nanocrystals via a simple solvothermal method. Different carbon shell thicknesses below 10 nm were generated by varying the amount of CA in the precursor solution. In contrast, without using CA, bare PbMoO4 nanocrystals were obtained. The PEC experiments showed that 2-nm carbon shell could preferably improve the water splitting performance of PbMoO4: the photocurrent density of 2-nm C@PbMoO4 is nearly 2-fold high as that of bare PbMoO4 at 0 V versus reversible hydrogen electrode (RHE). The surface charge transfer efficiency of 2-nm C@PbMoO4 in the PEC process was tested to increase from 83% to 90.4%, the charge separation efficiency enhanced 56%, and the PEC stability also greatly increased compared to those of the bare PbMoO4 nanocrystals. This strategy could be applied to other p-type semiconducting photocathodes for low-cost solar-fuel-generation devices.

  18. Macroporous Semiconductors

    PubMed Central

    Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

    2010-01-01

    Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  19. Ab initio study of II-(VI)2 dichalcogenides

    NASA Astrophysics Data System (ADS)

    Olsson, P.; Vidal, J.; Lincot, D.

    2011-10-01

    The structural stabilities of the (Zn,Cd)(S,Se,Te)2 dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe2 pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications.

  20. How Robust are Semiconductor Nanorods? Investigating the Stability and Chemical Decomposition Pathways of Photoactive Nanocrystals

    SciTech Connect

    Reichert, Malinda D; Lin, Chia-Cheng; Vela, Javier

    2014-07-08

    Anisotropic II–VI semiconductor nanostructures are important photoactive materials for various energy conversion and optical applications. However, aside from the many available surface chemistry studies and from their ubiquitous photodegradation under continuous illumination, the general chemical reactivity and thermal stability (phase and shape transformations) of these materials are poorly understood. Using CdSe and CdS nanorods as model systems, we have investigated the behavior of II–VI semiconductor nanorods against various conditions of extreme chemical and physical stress (acids, bases, oxidants, reductants, and heat). CdSe nanorods react rapidly with acids, becoming oxidized to Se or SeO2. In contrast, CdSe nanorods remain mostly unreactive when treated with bases or strong oxidants, although bases do partially etch the tips of the nanorods (along their axis). Roasting (heating in air) of CdSe nanorods results in rock-salt CdO, but neither CdSe nor CdO is easily reduced by hydrogen (H2). Another reductant, n-BuLi, reduces CdSe nanorods to metallic Cd. Variable temperature X-ray diffraction experiments show that axial annealing and selective axial melting of the nanorods precede particle coalescence. Furthermore, thermal analysis shows that the axial melting of II–VI nanorods is a ligand-dependent process. In agreement with chemical reactivity and thermal stability observations, silica-coating experiments show that the sharpest (most curved) II–VI surfaces are most active against heterogeneous nucleation of a silica shell. These results provide valuable insights into the fate and possible ways to enhance the stability and improve the use of II–VI semiconductor nanostructures in the fields of optics, magnetism, and energy conversion.

  1. Use of semiconductor nanocrystals to encode microbeads for multiplexed analysis of biological samples

    NASA Astrophysics Data System (ADS)

    Berestovoy, Mikhail A.; Bilan, Regina S.; Krivenkov, Victor; Nabiev, Igor; Sukhanova, Alyona

    2017-01-01

    Microbeads encoded with semiconductor quantum dots (QDs) are suitable tools for multiplexed analyses of various biological markers using flow cytometry. We have prepared a panel of microbeads encoded with QDs of different colors emitting with different luminescence intensities using the layer-by-layer deposition technique, which consists in layering of alternately charged polyelectrolytes and negatively charged QDs onto the surface of microbeads. This method allows QDs to be separated with one or several polymer layers in order to prevent Förster resonance energy transfer (FRET) and the resultant quenching of QD fluorescence in multicolor microbeads.

  2. Advances in low-cost infrared imaging using II-VI colloidal quantum dots (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Pimpinella, Richard E.; Buurma, Christopher; Ciani, Anthony J.; Grein, Christoph H.; Guyot-Sionnest, Philippe

    2017-02-01

    II-VI colloidal quantum dots (CQDs) have made significant technological advances over the past several years, including the world's first demonstration of MWIR imaging using CQD-based focal plane arrays. The ultra-low costs associated with synthesis and device fabrication, as well as compatibility with wafer-level focal plane array fabrication, make CQDs a very promising infrared sensing technology. In addition to the benefit of cost, CQD infrared imagers are photon detectors, capable of high performance and fast response at elevated operating temperatures. By adjusting the colloidal synthesis, II-VI CQD photodetectors have demonstrated photoresponse from SWIR through LWIR. We will discuss our recent progress in the development of low cost infrared focal plane arrays fabricated using II-VI CQDs.

  3. The problem of conductivity-type inversion in wide band gap II-VI compounds

    NASA Astrophysics Data System (ADS)

    Butkhuzi, T. V.; Tsekvava, B. E.; Kekelidze, N. P.; Chikoidze, E. G.; Khulordava, T. G.; Sharvashidze, M. M.

    1999-10-01

    To solve the problem of conductivity-type inversion in wide band gap II-VI compounds the thermodynamical analysis of intrinsic point defects has been performed. The existence of certain critical temperature of heat treatment in equilibrium conditions is shown. Above this temperature it is impossible to obtain the samples with stoichiometry deviation toward non-metals. At the temperatures lower than Tc, the diffusion processes in crystals are retarded and the equilibrium between II-VI crystals and B component vapour cannot be established (B is a component of a binary compound AB). Thus, it is shown that under thermodynamical equilibrium conditions it is impossible to obtain wide band gap II-VI compounds of p-type conductivity.

  4. Application of quaternary phase diagrams to compound semiconductor processing. Progress report, April 1, 1988--December 31, 1988

    SciTech Connect

    Schwartzman, A.

    1988-12-31

    This paper considers the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Examples, listed in a table, include semiconductor/insulator/semiconductor (SIS) layered structures, II-VI/II-VI and III-V/II-VI epitaxial heterojunctions and oxidation of ternary compounds. Solid solubility is taken into account for quaternary phase diagrams of semiconductor systems. Using free energies of formation, a method to calculate the quaternary phase diagrams was developed. The Ga-As-II-VI and Cd-Te-Zn-O phase diagrams are reviewed as examples of quaternary phase diagrams without and with solid solubility.

  5. Modeling of mechanical properties of II-VI materials

    NASA Technical Reports Server (NTRS)

    Sher, A.; Berding, M. A.; Van Schilfgaarde, M.; Chen, A.-B.; Patrick, R.

    1988-01-01

    This paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).

  6. Alloyed Mn-Cu-In-S nanocrystals: a new type of diluted magnetic semiconductor quantum dots.

    PubMed

    Liu, Qinghui; Deng, Ruiping; Ji, Xiangling; Pan, Daocheng

    2012-06-29

    A new type of Mn-Cu-In-S diluted magnetic semiconductor quantum dots was synthesized and reported for the first time. The quantum dots, with no highly toxic elements, not only show the same classic diluted magnetic behavior as Mn-doped CdSe, but also exhibit tunable luminescent properties in a relatively large window from 542 to 648 nm. An absolute photoluminescence quantum yield up to 20% was obtained after the shell growth of ZnS. This kind of magnetic/luminescent bi-functional Mn-Cu-In-S/ZnS core/shell quantum dot might serve as promising nanoprobes for use in dual-mode optical and magnetic resonance imaging techniques.

  7. Alloyed Mn-Cu-In-S nanocrystals: a new type of diluted magnetic semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Liu, Qinghui; Deng, Ruiping; Ji, Xiangling; Pan, Daocheng

    2012-06-01

    A new type of Mn-Cu-In-S diluted magnetic semiconductor quantum dots was synthesized and reported for the first time. The quantum dots, with no highly toxic elements, not only show the same classic diluted magnetic behavior as Mn-doped CdSe, but also exhibit tunable luminescent properties in a relatively large window from 542 to 648 nm. An absolute photoluminescence quantum yield up to 20% was obtained after the shell growth of ZnS. This kind of magnetic/luminescent bi-functional Mn-Cu-In-S/ZnS core/shell quantum dot might serve as promising nanoprobes for use in dual-mode optical and magnetic resonance imaging techniques.

  8. Biosynthesis of fluorescent CdS nanocrystals with semiconductor properties: Comparison of microbial and plant production systems.

    PubMed

    Al-Shalabi, Zahwa; Doran, Pauline M

    2016-04-10

    This study investigated fission yeast (Schizosaccharomyces pombe) and hairy roots of tomato (Solanum lycopersicum) as in vitro production vehicles for biological synthesis of CdS quantum dots. Cd added during the mid-growth phase of the cultures was detoxified within the biomass into inorganic sulphide-containing complexes with the quantum confinement properties of semiconductor nanocrystals. Significant differences were found between the two host systems in terms of nanoparticle production kinetics, yield and quality. The much slower growth rate of hairy roots compared with yeast is a disadvantage for commercial scaled-up production. Nanoparticle extraction from the biomass was less effective for the roots: 19% of the Cd present in the hairy roots was recovered after extraction compared with 34% for the yeast. The overall yield of CdS quantum dots was also lower for the roots: relative to the amount of Cd taken up into the biomass, 8.5% was recovered in yeast gel filtration fractions exhibiting quantum dot properties whereas the result for hairy roots was only 0.99%. Yeast-produced CdS crystallites were somewhat smaller with diameters of approximately 2-6 nm compared with those of 4-10nm obtained from the roots. The average ratio of inorganic sulphide to Cd for the purified and size-fractionated particles was 0.44 for the yeast and 1.6 for the hairy roots. Despite the limitations associated with hairy roots in terms of culture kinetics and product yield, this system produced CdS nanoparticles with enhanced photostability and 3.7-13-fold higher fluorescence quantum efficiency compared with those generated by yeast. This work demonstrates that the choice of cellular host can have a significant effect on nanoparticle functional properties as well as on the bioprocessing aspects of biological quantum dot synthesis. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. 77 FR 36579 - II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased Workers From Adecco, Carol...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-19

    ... Employment and Training Administration II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased...., Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Revised Determination on Reconsideration The... period. The determination was applicable to workers and former workers of II-VI, Inc., Infrared Optics...

  10. Photoswitchable semiconductor nanocrystals with self-regulating photochromic Förster resonance energy transfer acceptors

    NASA Astrophysics Data System (ADS)

    Díaz, Sebastián A.; Gillanders, Florencia; Jares-Erijman, Elizabeth A.; Jovin, Thomas M.

    2015-01-01

    Photoswitchable molecules and nanoparticles constitute superior biosensors for a wide range of industrial, research and biomedical applications. Rendered reversible by spontaneous or deterministic means, such probes facilitate many of the techniques in fluorescence microscopy that surpass the optical resolution dictated by diffraction. Here we have devised a family of photoswitchable quantum dots (psQDs) in which the semiconductor core functions as a fluorescence donor in Förster resonance energy transfer (FRET), and multiple photochromic diheteroarylethene groups function as acceptors upon activation by ultraviolet light. The QDs were coated with a polymer bearing photochromic groups attached via linkers of different length. Despite the resulting nominal differences in donor-acceptor separation and anticipated FRET efficiencies, the maximum quenching of all psQD preparations was 38±2%. This result was attributable to the large ultraviolet absorption cross-section of the QDs, leading to preferential cycloreversion of photochromic groups situated closer to the nanoparticle surface and/or with a more favourable orientation.

  11. Environmental release of core–shell semiconductor nanocrystals from free-standing polymer nanocomposite films†

    PubMed Central

    Pillai, Karthik V.; Gray, Patrick J.; Tien, Chun-Chieh; Bleher, Reiner; Sung, Li-Piin

    2016-01-01

    Concomitant with the development of polymer nanocomposite (PNC) technologies across numerous industries is an expanding awareness of the uncertainty with which engineered nanoparticles embedded within these materials may be released into the external environment, particularly liquid media. Recently there has been an interest in evaluating potential exposure to nanoscale fillers from PNCs, but existing studies often rely upon uncharacterized, poor quality, or proprietary materials, creating a barrier to making general mechanistic conclusions about release phenomena. In this study we employed semiconductor nanoparticles (quantum dots, QDs) as model nanofillers to quantify potential release into liquid media under specific environmental conditions. QDs of two sizes were incorporated into low-density polyethylene by melt compounding and the mixtures were extruded as free-standing fluorescent films. These films were subjected to tests under conditions intended to accelerate potential release of embedded particles or dissolved residuals into liquid environments. Using inductively-coupled plasma mass spectrometry and laser scanning confocal microscopy, it was found that the acidity of the external medium, exposure time, and small differences in particle size (on the order of a few nm) all play pivotal roles in release kinetics. Particle dissolution was found to play a major if not dominant role in the release process. This paper also presents the first evidence that internally embedded nanoparticles contribute to the mass transfer, an observation made possible via the use of a model system that was deliberately designed to probe the complex relationships between nanoparticle-enabled plastics and the environment. PMID:27529026

  12. Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly

    NASA Astrophysics Data System (ADS)

    Whaley, Sandra R.; English, D. S.; Hu, Evelyn L.; Barbara, Paul F.; Belcher, Angela M.

    2000-06-01

    In biological systems, organic molecules exert a remarkable level of control over the nucleation and mineral phase of inorganic materials such as calcium carbonate and silica, and over the assembly of crystallites and other nanoscale building blocks into complex structures required for biological function. This ability to direct the assembly of nanoscale components into controlled and sophisticated structures has motivated intense efforts to develop assembly methods that mimic or exploit the recognition capabilities and interactions found in biological systems. Of particular value would be methods that could be applied to materials with interesting electronic or optical properties, but natural evolution has not selected for interactions between biomolecules and such materials. However, peptides with limited selectivity for binding to metal surfaces and metal oxide surfaces have been successfully selected. Here we extend this approach and show that combinatorial phage-display libraries can be used to evolve peptides that bind to a range of semiconductor surfaces with high specificity, depending on the crystallographic orientation and composition of the structurally similar materials we have used. As electronic devices contain structurally related materials in close proximity, such peptides may find use for the controlled placement and assembly of a variety of practically important materials, thus broadening the scope for `bottom-up' fabrication approaches.

  13. Photoswitchable semiconductor nanocrystals with self-regulating photochromic Förster resonance energy transfer acceptors.

    PubMed

    Díaz, Sebastián A; Gillanders, Florencia; Jares-Erijman, Elizabeth A; Jovin, Thomas M

    2015-01-16

    Photoswitchable molecules and nanoparticles constitute superior biosensors for a wide range of industrial, research and biomedical applications. Rendered reversible by spontaneous or deterministic means, such probes facilitate many of the techniques in fluorescence microscopy that surpass the optical resolution dictated by diffraction. Here we have devised a family of photoswitchable quantum dots (psQDs) in which the semiconductor core functions as a fluorescence donor in Förster resonance energy transfer (FRET), and multiple photochromic diheteroarylethene groups function as acceptors upon activation by ultraviolet light. The QDs were coated with a polymer bearing photochromic groups attached via linkers of different length. Despite the resulting nominal differences in donor-acceptor separation and anticipated FRET efficiencies, the maximum quenching of all psQD preparations was 38±2%. This result was attributable to the large ultraviolet absorption cross-section of the QDs, leading to preferential cycloreversion of photochromic groups situated closer to the nanoparticle surface and/or with a more favourable orientation.

  14. Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

    2004-03-01

    The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

  15. Mesoporous silica beads embedded with semiconductor quantum dots and iron oxide nanocrystals: dual-function microcarriers for optical encoding and magnetic separation.

    PubMed

    Sathe, Tushar R; Agrawal, Amit; Nie, Shuming

    2006-08-15

    Mesoporous beads are promising materials for embedding functional nanoparticles because of their nanometer-sized pores and large surface areas. Here we report the development of silica microbeads embedded with both semiconductor quantum dots (QD) and iron oxide (Fe3O4) nanocrystals as a new class of dual-function carriers for optical encoding and magnetic separation. The embedding (doping) process is carried out by either simultaneous or sequential addition of quantum dots and iron oxide (Fe3O4) nanocrystals in solution. The doping process is fast and quantitative, but the incorporated iron oxide strongly attenuates the signal intensity of QD fluorescence. We find that this attenuation is not due to conventional fluorescence quenching but is caused by the broad optical absorption spectrum of mixed-valence Fe3O4. For improved biocompatibility and reduced nonspecific binding, the encoded beads are further coated with amphiphilic polymers such as octylamine poly(acrylic acid). The results indicate that the polymer-coated beads are well suited for target capturing and enrichment, yielding magnetic separation efficiencies higher than 99%. By combining the multiplexing capability of QDs with the superparamagnetic properties of iron oxide nanocrystals, this class of encoded beads is expected to find broad applications in high-throughput and multiplexed biomolecular assays.

  16. Loosening quantum confinement: observation of real conductivity caused by hole polarons in semiconductor nanocrystals smaller than the Bohr radius.

    PubMed

    Ulbricht, Ronald; Pijpers, Joep J H; Groeneveld, Esther; Koole, Rolf; Donega, Celso de Mello; Vanmaekelbergh, Daniel; Delerue, Christophe; Allan, Guy; Bonn, Mischa

    2012-09-12

    We report on the gradual evolution of the conductivity of spherical CdTe nanocrystals of increasing size from the regime of strong quantum confinement with truly discrete energy levels to the regime of weak confinement with closely spaced hole states. We use the high-frequency (terahertz) real and imaginary conductivities of optically injected carriers in the nanocrystals to report on the degree of quantum confinement. For the smaller CdTe nanocrystals (3 nm < radius < 5 nm), the complex terahertz conductivity is purely imaginary. For nanocrystals with radii exceeding 5 nm, we observe the onset of real conductivity, which is attributed to the increasingly smaller separation between the hole states. Remarkably, this onset occurs for a nanocrystal radius significantly smaller than the bulk exciton Bohr radius a(B) ∼ 7 nm and cannot be explained by purely electronic transitions between hole states, as evidenced by tight-binding calculations. The real-valued conductivity observed in the larger nanocrystals can be explained by the emergence of mixed carrier-phonon, that is, polaron, states due to hole transitions that become resonant with, and couple strongly to, optical phonon modes for larger QDs. These polaron states possess larger oscillator strengths and broader absorption, and thereby give rise to enhanced real conductivity within the nanocrystals despite the confinement.

  17. Charge separation and transport in conjugated-polymer/semiconductor-nanocrystal composites studied by photoluminescence quenching and photoconductivity

    SciTech Connect

    Greenham, N.C.; Peng, X.; Alivisatos, A.P.

    1996-12-01

    We study the processes of charge separation and transport in composite materials formed by mixing cadmium selenide or cadmium sulfide nanocrystals with the conjugated polymer poly(2-methoxy,5-(2{prime}-ethyl)-hexyloxy-{ital p}-phenylenevinylene) (MEH-PPV). When the surface of the nanocrystals is treated so as to remove the surface ligand, we find that the polymer photoluminescence is quenched, consistent with rapid charge separation at the polymer/nanocrystal interface. Transmission electron microscopy of these quantum-dot/conjugated-polymer composites shows clear evidence for phase segregation with length scales in the range 10{endash}200 nm, providing a large area of interface for charge separation to occur. Thin-film photovoltaic devices using the composite materials show quantum efficiencies that are significantly improved over those for pure polymer devices, consistent with improved charge separation. At high concentrations of nanocrystals, where both the nanocrystal and polymer components provide continuous pathways to the electrodes, we find quantum efficiencies of up to 12{percent}. We describe a simple model to explain the recombination in these devices, and show how the absorption, charge separation, and transport properties of the composites can be controlled by changing the size, material, and surface ligands of the nanocrystals. {copyright} {ital 1996 The American Physical Society.}

  18. Theoretical Study of Defect Signatures in III-V and II-VI Semiconductors

    DTIC Science & Technology

    2006-03-01

    sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden...interstitial ( GaI ) complexes. c) We have investigated and identified two important mechanisms that deactivate nitrogen doped ZnO and turns them into...measurements found ODMR lines that correspond to Gai but has much weaker Fermi contact values. We believed that the observed FC -11- came from a

  19. Electron-nuclei spin dynamics in II-VI semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Le Gall, C.; Brunetti, A.; Boukari, H.; Besombes, L.

    2012-05-01

    We report on the dynamics of optically induced nuclear spin polarization in individual CdTe/ZnTe quantum dots loaded with one electron by modulation doping. The fine structure of the hot trion (charged exciton X- with an electron in the P shell) is identified in photoluminescence excitation spectra. A negative polarization rate of the photoluminescence, optical pumping of the resident electron, and the built up of dynamic nuclear spin polarization (DNSP) are observed in time-resolved optical pumping experiments when the quantum dot is excited at higher energy than the hot trion triplet state. The time and magnetic field dependence of the polarization rate of the X- emission allows us to probe the dynamics of formation of the DNSP in the optical pumping regime. We demonstrate using time-resolved measurements that the creation of a DNSP at B=0 T efficiently prevents longitudinal spin relaxation of the electron caused by fluctuations of the nuclear spin bath. The DNSP is built in the microsecond range at high excitation intensity. A relaxation time of the DNSP in about 10 μm is observed at B=0 T and significantly increases under a magnetic field of a few milli-Tesla. We discuss mechanisms responsible for the fast initialization and relaxation of the diluted nuclear spins in this system.

  20. Very High Quality Crystals of Wide-Gap II-VI Semiconductors: What for?

    DTIC Science & Technology

    2001-01-01

    grain boundaries and twinning. If the lifetime is to be high - the concentration of defects and residual impurities acting as recombination centers must...structures based on Hg).8Cdo.2Te. The substrate crystals must be single crystals with no grain boundaries and twins. Definite crystallografic orientation is...scattering of light must be avoided, the single crystals of Cdl.xMnxTe must have no grain boundaries and twins, and very small amount of any precipitates

  1. Device Processing of II-VI Semiconductor Films and Quantum Well Structures

    DTIC Science & Technology

    1991-03-07

    The objectives of this program is to develop a device processing technology necessary for proper utilization of Hg-based heterostructures and...superlattices in device applications. The specific focus or long term goal guiding the direction of the program is to develop the devices and processing ... technology required for an IR focal plane integrated with on-board signal processing electronics.

  2. Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds

    NASA Astrophysics Data System (ADS)

    Lashkarev, G. V.; Sichkovskiyi, V. I.; Radchenko, M. V.; Karpina, V. A.; Butorin, P. E.; Dmitriev, O. I.; Lazorenko, V. I.; Slyn'ko, E. I.; Lytvyn, P. M.; Jakiela, R.; Knoff, W.; Story, T.; Aleshkevych, P.

    2009-01-01

    Chemical and phase composition, magnetic susceptibility, SIMS, magnetic force microscopy, and neutron diffraction data for Ge1-x-ySnxMnyTe, InSe⟨Mn⟩, and ZnO⟨Co, Mn⟩ single crystals are investigated over a wide range of temperatures and magnetic fields. For Ge1-x-ySnxMnyTe the existence of ferromagnetic (FM) ordering with a Curie temperature TC˜50K, due to an indirect exchange interaction between Mn ions via the degenerate hole gas, is established. It is shown that at T <50K the ferromagnetic regions of the crystal form a spin-glass phase. In InSe⟨Mn⟩ it is found that hysteresis loops of the magnetic moment M(H ) are observed up to 350K. They attest to the existence of ferromagnetic ordering, which is apparently due to ferromagnetic clusters in which a superexchange of the Mn ions via the Se anions is proposed, and to an indirect interaction via the 2D electron gas. At T <70K a period doubling of the magnetic sublattice of α-MnSe second-phase inclusions is observed, and their distribution in the layered structure of the InSe⟨Mn⟩ host matrix has a regular character, forming a self-organized FM/AFM superlattice. In ZnO⟨Co, Mn⟩ the temperature dependence of M obeys a Curie law. When the solubility limit of Co in ZnO is exceeded, hysteresis loops are observed as a consequence of the appearance of a ferromagnetic second phase. In ZnO⟨Mn⟩ samples and also in some ZnO⟨Co⟩ samples with Co content below the solubility limit an antiferromagnetic (AFM) interaction takes place.

  3. Theoretical studies of II-VI semiconductors, carbon-nitride compounds, fullerenes and nanotubes

    NASA Astrophysics Data System (ADS)

    Cote, Michel

    1998-12-01

    Under the Carl D. Perkins Act Vocational and Applied Technology Act Amendments of 1990, community colleges were mandated to integrate academic and occupational education for all students, though the Act did not specify the ways in which this might be accomplished or set guidelines for compliance. This dissertation offers a rubric by which compliance can be measured---the Domains of Career Preparation---a comprehensive taxonomy of academic and occupational competencies which prepares all students for work and for further education. Applying the Domains and the models of integration identified by Grubb and Kraskouskas (1992), the dissertation reports compliance among a random one-third of the community colleges of each state. In addition, the dissertation examines organizational characteristics and implementation attributes to understand how this federal policy has failed to change local practice. The data reveals that colleges are more likely to adopt isomorphic structures and curriculum than they are to risk the implementation of innovations. The final chapter of the dissertation builds on theories of organizational change and adoption of innovations and describes a research-practice-policy collaborative to foster substantive curricular reform among a select group of colleges, who might then be imitated by their counterparts. The combination of benchmarks and structures for innovation has the potential to expand capacity and will of community college leaders to meet the instructional needs of a highly diverse population.

  4. Time-resolved x-ray excited optical luminescence studies of II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Rosenberg, R. A.; Lee, S.-T.; Kim, P.-S. G.

    2005-03-01

    Due to quantum confinement effects nanostructures often exhibit unique and intriguing fluorescence behavior. X-ray excited optical luminescence (XEOL) provides the capability to chemically map the sites responsible for producing low energy (1-6 eV) fluorescence. By taking advantage of the time structure of the x-ray pulses at the Advanced Photon Source, it also possible to determine the dynamic behavior of the states involved in the luminescence. In this presentation we show how this technique can be utilized to understand the XEOL from ZnS, ZnTe, and ZnO nanowires. Time-gated optical spectra show that the high-energy, band-edge states have a short lifetime while the lower-energy, deep-levels have a relatively long lifetime. X-ray excitation curves are obtained using the relevant optical photons as signals and compared to the corresponding x-ray absorption spectra. We will show how these results enable us to determine the local structure of the luminescent site(s).

  5. Structure direction of II-VI semiconductor quantum dot binary nanoparticle superlattices by tuning radius ratio.

    PubMed

    Chen, Zhuoying; O'Brien, Stephen

    2008-06-01

    We report a nanoparticle radius ratio dependent study of the formation of binary nanoparticle superlattices (BNSLs) of CdTe and CdSe quantum dots. While keeping all other parameters identical in the system, the effective nanoparticle radius ratio, gamma(eff), was tuned to allow the formation of five different BNSL structures, AlB(2), cub-NaZn(13), ico-NaZn(13), CaCu(5), and MgZn(2). For each structure, gamma(eff) is located close to a local maximum of its space-filling factor, based on a model for space filling principles. We demonstrate the ability to select specific BNSLs based solely on gamma(eff), highlighting the role of entropic forces as a driver for self-assembly.

  6. Band gap engineering of Zn based II-VI semiconductors through uniaxial strain

    NASA Astrophysics Data System (ADS)

    Yadav, Satyesh; Ramprasad, Rampi

    2012-02-01

    The electronic structure of bulk wurtzitic ZnX (X=O, S, Se, and Te) under uniaxial strain along the [0001] direction is investigated using hybrid density functional theory calculations and many-body perturbation theory. It is found that uniaxial tensile and large compressive strains decrease the band gap, similar to what has been predicted by semilocal density functional theory (DFT) calculations [Yadav et. al, Phys. Rev. B, 81, 144120 (2010)]. Moreover, the change in the band gap under uniaxial strains predicted by semilocal DFT is in good quantitative agreement with the present results at all strains considered, thereby bringing a measure of redemption to conventional (semi)local DFT descriptions of the electronic structure of at least this class of insulators. The present results have important implications for band gap engineering through strain, especially for complex systems containing a large number of atoms (e.g., nanowires) for which higher-level calculations may be too computationally intensive.

  7. Thermophysical Properties of Te-based II-VI Semiconductors: Reduced Algorithms for Thermal Diffusivity Determination

    NASA Technical Reports Server (NTRS)

    Banish, R. Michael; Brantschen, Segolene; Pourpoint, Timothee L.; Wessling, Francis; Sekerka, Robert F.

    2003-01-01

    This paper presents methodologies for measuring the thermal diffusivity using the difference between temperatures measured at two, essentially independent, locations. A heat pulse is applied for an arbitrary time to one region of the sample; either the inner core or the outer wall. Temperature changes are then monitored versus time. The thermal diffusivity is calculated from the temperature difference versus time. No initial conditions are used directly in the final results.

  8. Assessment of subsurface damage in polished II-VI semiconductors by ion channeling

    NASA Astrophysics Data System (ADS)

    Lucca, D. A.; Wetteland, C. J.; Misra, A.; Klopfstein, M. J.; Nastasi, M.; Maggiore, C. J.; Tesmer, J. R.

    2004-06-01

    Surfaces of bulk single crystal CdS, ZnSe and ZnO were prepared by mechanical polishing with 1 and 1/4 μm diamond abrasive slurries and by chemomechanical polishing with sodium hypochlorite:colloidal silica. Etched surfaces, indicative of original crystalline quality were also prepared. Near surface damage was investigated by ion channeling with He ions using incident beam energies of 2 and 5 MeV and detector positions of 75° and 13°. Damage depths were found to be significantly higher for ZnSe when compared to CdS or ZnO. The chemomechanical polishing process was seen to introduce small but measurable subsurface damage in CdS and ZnSe. However, channeling was unable to detect any damage for the chemomechanically polished ZnO surfaces, a result which was supported by cross-section transmission electron microscopy (XTEM). The presence of damage beyond that identified by the surface peak for the mechanically polished ZnSe surfaces was indicated by the dechanneling behavior below the surface.

  9. Correlation of Schottky constants with interatomic distances of selected I-VII and II-VI compounds

    NASA Astrophysics Data System (ADS)

    Wiedemeier, Heribert

    2013-10-01

    The observed linear (Na-, K-halides) and near-linear (Mg-, Sr-, Zn-, Cd-, and Hg-chalcogenides) dependences of Schottky constants on reciprocal interatomic distances yield the relation logKS=((ss1/T)+is)1/d(A-B)+(si1/T)+ii, where KS is the product of metal and non-metal thermal equilibrium vacancy concentrations, and ss, is, si and ii are the group specific slope and intercept values obtained from an extended analysis of the above log KS versus 1/d(A-B) data. The previously reported linear dependences of log KS on the Born-Haber lattice energies [1] are the basis for combining the earlier results [1] with the Born-Mayer lattice energy equation to yield a new thermodynamic relationship, namely logKS=-(2.303(c(B-M)/d(A-B)-Ie), where c(B-M) is the product of the constants of the Born-Mayer equation and Ie is the metal ionization energy of the above compounds. These results establish a correlation between point defect concentrations and basic thermodynamic, coulombic, and structural solid state properties for selected I-VII and II-VI semiconductor materials.

  10. Silicon nanocrystal inks, films, and methods

    DOEpatents

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  11. Ion beam synthesis of CdS, ZnS, and PbS compound semiconductor nanocrystals

    SciTech Connect

    White, C.W.; Budai, J.D.; Meldrum, A.L.

    1997-12-01

    Sequential ion implantation followed by thermal annealing has been used to form encapsulated CdS, ZnS, and PbS nanocrystals in SiO{sub 2} and Al{sub 2}O{sub 3} matrices. In SiO{sub 2}, nanoparticles are nearly spherical and randomly oriented, and ZnS and PbS nanocrystals exhibit a bimodal size distribution. In Al{sub 2}O{sub 3}, nanoparticles are faceted and coherent with the matrix. Initial photoluminescence (PL) results are presented.

  12. CDTE CERAMICS BASED ON COMPRESSION OF NANOCRYSTAL POWDER.

    SciTech Connect

    KOLESNIKOV, N.N.; BORISENKO, E.B.; BORISENKO, D.N.; JAMES, R.B.; KVEDER, V.V.; GARTMAN, V.K.; GNESIN, G.A.

    2005-07-01

    Wide-gap II-VI semiconductor crystalline materials are conventionally used in laser optics, light emitting devices, and nuclear detectors. The advances made in the studies of nanocrystals and in the associated technologies have created great interest in the design of semiconductor devices based on these new materials. The objectives of this work are to study the microstructure and the properties of the new material produced through CdTe nanopowder compression and to consider the prospects of its use in the design of ionizing-radiation detectors and in laser optics. Highly dense material produced of 7-10 nm CdTe particles under pressure of 20-600 MPa at temperatures from 20 to 200 C was analyzed using x-ray diffractometry, texture analysis; light and scanning electron microscopy, and optical spectrophotometry. The mechanical and electrical properties of the compacted material were measured and compared with similar characteristics of the conventionally grown single crystals. Phase transformation from metastable to stable crystal structure caused by deformation was observed in the material. Sharp crystallographic texture {l_brace}001{r_brace} that apparently affects specific mechanical, electrical and optical characteristics of compacted CdTe was observed. The specific resistivity calculated from the linear current-voltage characteristics was about 10{sup 10} Ohm x cm, which is a promisingly high value regarding the possibility of using this material in the design of semiconductor radiation detectors. The optical spectra show that the transmittance in the infrared region is sufficient to consider the prospects of possible applications of CdTe ceramics in laser optics.

  13. Aqueous oxidation reaction enabled layer-by-layer corrosion of semiconductor nanoplates into single-crystalline 2D nanocrystals with single layer accuracy and ionic surface capping.

    PubMed

    Ji, Muwei; Xu, Meng; Zhang, Jun; Liu, Jiajia; Zhang, Jiatao

    2016-02-25

    A controllable aqueous oxidation reaction enabled layer-by-layer corrosion has been proposed to prepare high-quality two-dimensional (2D) semiconductor nanocrystals with single layer accuracy and well-retained hexagonal shapes. The appropriate oxidizing agent, such as H2O2, Fe(NO3)3, and HNO3, could not only corrode the layered-crystalline-structured Bi2Te3 nanoplates layer-by-layer to be a single quintuple layer, but also replace the organic barriers to be ionic ligands on the surface synergistically. AFM analysis was used to confirm the layer-by-layer exfoliation from the side to the center. Together with precise XRD, LRTEM and HRTEM characterizations, the controllable oxidation reaction enabled aqueous layer-by-layer corrosion mechanism has been studied.

  14. Quantum Chemical Calculations of the Influence of Anchor-Cum-Spacer Groups on Femtosecond Electron Transfer Times in Dye-Sensitized Semiconductor Nanocrystals.

    PubMed

    Persson, P; Lundqvist, M J; Ernstorfer, R; Goddard, W A; Willig, F

    2006-03-01

    Electronic properties of dye-sensitized semiconductor nanocrystals, consisting of perylene (Pe) chromophores attached to 2 nm TiO2 nanocrystals via different anchor-cum-spacer groups, have been studied theoretically using density functional theory (DFT) cluster calculations. Approximate effective electronic coupling strengths for the heterogeneous electron-transfer interaction have been extracted from the calculated electronic structures and are used to estimate femtosecond electron-transfer times theoretically. Results are presented for perylenes attached to the TiO2 via formic acid (Pe-COOH), propionic acid (Pe-CH2-CH2-COOH), and acrylic acid (Pe-CH [Formula: see text] CH-COOH). The calculated electron transfer times are between 5 and 10 fs with the formic acid and the conjugated acrylic acid bridges and about 35 fs with the saturated propionic acid bridge. The calculated electron injection times are of the same order of magnitude as the corresponding experimental values and qualitatively follow the experimental trend with respect to the influence of the different substitutions on the injection times.

  15. Use of a ZnTe:N/ZnO: A1 bilayer in thin-flim, multi-junction II-VI solar cells.

    NASA Astrophysics Data System (ADS)

    Rich, Geoffrey

    2002-03-01

    Development of a low-cost, thin-film tandem solar cell structure utilizing II-VI compound semiconductors is described. The structure consists of a CdS/CdTe top cell to which a bilayer of ZnTe:N/ZnO:Al is applied, subsequently bonded to a thin-film or crystalline bottom cell. The bilayer forms a back contact to the top cell, with an appropriate optical transmission and lateral conductivity characteristic for use in a four-terminal tandem device. Previous work at the University of Toledo has shown that ZnTe can be effectively doped by reactive sputtering in nitrogen, and demonstration of ZnTe:N as a component of a back contact to CdS/CdTe heterojunctions has been demonstrated [1]. The addition of a ZnO:Al layer provides the necessary lateral conductivity required by a four-terminal tandem solar cell design. Test structures consisting of Al/ZnTe:N/ZnO:Al/Al, deposited on glass by magnetron sputtering, are characterized optically and electrically. The ZnTe:N/ZnO:Al bilayer is applied to thin-film CdS/CdTe heterojunctions deposited by rapid, low-cost techniques (provided by First Solar, LLC). With the addition of a metallic grid, functioning top cell structures are created and measured. By bonding a bottom cell to this structure, a complete dual-junction, four-terminal device is constructed and demonstrated. [1] J. Drayton, A. Gupta, K. Makhratchev, K. Price, R. Bohn, and A. Compaan, Mat. Res. Soc. Symp. Proc. 668, “II-VI Compound Semiconductor Photovoltaic Materials,” ed. by R Noufi, R. W. Birkmire, D. Lincot, H. W. Schock.

  16. Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures

    SciTech Connect

    Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

    2008-08-06

    colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

  17. Enhanced magneto-optical properties of semiconductor EuS nanocrystals assisted by surface plasmon resonance of gold nanoparticles.

    PubMed

    Kawashima, Akira; Nakanishi, Takayuki; Shibayama, Tamaki; Watanabe, Seiichi; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji; Hasegawa, Yasuchika

    2013-10-18

    Remarkable magneto-optical properties of a new isolator material, that is, europium sulfide nanocrystals with gold (EuS-Au nanosystem), has been demonstrated for a future photo-information technology. Attachment of gold particles that exhibit surface plasmon resonance leads to amplification of the magneto-optical properties of the EuS nanocrystals. To construct the EuS-Au nanosystems, cubic EuS and spherical Au nanocrystals have been joined by a variety of organic linkers, that is, 1,2-ethanedithiol (EDT), 1,6-hexanedithiol (HDT), 1,10-decanedithiol (DDT), 1,4-bisethanethionaphthalene (NpEDT), or 1,4-bisdecanethionaphthalene (NpDDT) . Formation of these systems was observed by XRD, TEM, and absorption spectra measurements. The magneto-optical properties of the EuS-Au nanosystem have been characterized by using Faraday rotation spectroscopy. The Faraday rotation angle of the EuS-Au nanosystem is dependent on the Au particle size and interparticle distance between EuS and Au nanocrystals. Enhancement of the Faraday rotation of EuS-Au nanosystems was observed. The spin configuration in the excited state of the EuS-Au nanosystem was also investigated using photo-assisted electron paramagnetic resonance.

  18. Linearly arranged polytypic CZTSSe nanocrystals

    PubMed Central

    Fan, Feng-Jia; Wu, Liang; Gong, Ming; Chen, Shi You; Liu, Guang Yao; Yao, Hong-Bin; Liang, Hai-Wei; Wang, Yi-Xiu; Yu, Shu-Hong

    2012-01-01

    Even colloidal polytypic nanostructures show promising future in band-gap tuning and alignment, researches on them have been much less reported than the standard nano-heterostructures because of the difficulties involved in synthesis. Up to now, controlled synthesis of colloidal polytypic nanocrsytals has been only realized in II-VI tetrapod and octopod nanocrystals with branched configurations. Herein, we report a colloidal approach for synthesizing non-branched but linearly arranged polytypic I2-II-IV-VI4 nanocrystals, with a focus on polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystals. Each synthesized polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystal is consisted of two zinc blende-derived ends and one wurtzite-derived center part. The formation mechanism has been studied and the phase composition can be tuned through adjusting the reaction temperature, which brings a new band-gap tuning approach to Cu2ZnSnSxSe4-x nanocrystals. PMID:23233871

  19. Structural Investigations of Surfaces and Orientation-SpecificPhenomena in Nanocrystals and Their Assemblies

    SciTech Connect

    Aruguete, Deborah Michiko

    2006-01-01

    Studies of colloidal nanocrystals and their assemblies are presented. Two of these studies concern the atomic-level structural characterization of the surfaces, interfaces, and interiors present in II-VI semiconductor nanorods. The third study investigates the crystallographic arrangement of cobalt nanocrystals in self-assembled aggregates. Crystallographically-aligned assemblies of colloidal CdSe nanorods are examined with linearly-polarized Se-EXAFS spectroscopy, which probes bonding along different directions in the nanorod. This orientation-specific probe is used, because it is expected that the presence of specific surfaces in a nanorod might cause bond relaxations specific to different crystallographic directions. Se-Se distances are found to be contracted along the long axis of the nanorod, while Cd-Se distances display no angular dependence, which is different from the bulk. Ab-initio density functional theory calculations upon CdSe nanowires indicate that relaxations on the rod surfaces cause these changes. ZnS/CdS-CdSe core-shell nanorods are studied with Se, Zn, Cd, and S X-ray absorption spectroscopy (XAS). It is hypothesized that there are two major factors influencing the core and shell structures of the nanorods: the large surface area-to-volume ratio, and epitaxial strain. The presence of the surface may induce bond rearrangements or relaxations to minimize surface energy; epitaxial strain might cause the core and shell lattices to contract or expand to minimize strain energy. A marked contraction of Zn-S bonds is observed in the core-shell nanorods, indicating that surface relaxations may dominate the structure of the nanorod (strain might otherwise drive the Zn-S lattice to accommodate the larger CdS or CdSe lattices via bond expansion). EXAFS and X-ray diffraction (XRD) indicate that Cd-Se bond relaxations might be anisotropic, an expected phenomenon for a rod-shaped nanocrystal. Ordered self-assembled aggregates of cobalt nanocrystals are

  20. Spectroscopic analysis on metal-oxide-semiconductor light-emitting diodes with buried Si nanocrystals and nano-pyramids in SiO(x) film.

    PubMed

    Lin, Gong-Ru

    2008-03-01

    The difference between the white and near-infrared electroluminescence of metal-oxide-semiconductor light-emitting diodes fabricated on 1,100 degrees C-annealed Si-rich SiO(x)/p-Si substrate with interfacial pyramidal Si dots (Si nano-pyramids) was characterized. By changing the substrate temperature and induced coupled plasma power during the plasma enhanced chemical vapor deposition of Si-rich SiO(x) films, the effects of the growth conditions on the defect- and Si nano-pyramid-related carrier transport and Si nanocrystal-related electroluminescence spectroscopy were also investigated. The annealed Si-rich SiO(x)/p-Si films grown at higher synthesized substrate temperate (350 degrees C) show the larger Si nano-pyramids precipitating near the Si/SiO2 interface. The indium tin oxide/Si-rich SiO(x)/p-Si/Al metal-oxide-semiconductor light-emitting diodes with Si-rich SiO(x) films exhibit different white-light electroluminescence spectra at wavelengths from 400 to 650 nm. The Si nanocrystal-related electroluminescence spectra at 650-850 nm are confirmed, whereas the electroluminescence spectra are shorter wavelengths is attributed to oxygen related defects. These defects become an electron-preferred transporting path within the Si-rich SiO(x) film, whose densities are decreased by increasing the substrate temperature or reducing the induced coupled plasma power. Defect-related white-light electroluminescence emits power for a relatively short lifetime. The lifetime can be lengthened and the electroluminescence power can be raised simultaneously by increasing deposition temperature to 350 degrees C and adjusting the induced coupled plasma power to a threshold of 30 W, which effectively increases the densities of Si nanocrystals and nano-pyramids in the Si-rich SiO(x) film with Si concentration of up to 40 at%. A nearly defect-free Si-rich SiO(x) sample can be grown under such conditions, which contributes to the most stable and largest near-infrared electroluminescence

  1. X-ray absorption fine structure and X-ray excited optical luminescence studies of II-VI semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Murphy, Michael Wayne

    2010-06-01

    of 0, 1,3, and 10% and annealed at 400, 600 and 800°C in air. XAFS spectra show that low dopant concentrations and low processing temperatures limit the amount of secondary phase formation. The nanopowders did not show roomtemperature ferromagnetism and increased secondary phase formation increases the paramagnetic character of the hysteresis curves at 5°K. Keywords: X-ray absorption fine structures (XAFS), X-ray absorption near-edge structures (XANES), extended X-ray absorption fine structure (EXAFS), X-ray absorption spectroscopy(XAS), X-ray excited optical luminescence (XEOL), time-resolved, II-VI semiconductors, nanostructure, nanomaterial, nanoribbon, nanowire, nanopartic1e, heterostructure, ZnO, ZnS, ZnO-ZnS, CdS, CdSe, CdSSe, ZnO:Mn, ZnO:Co, ZnS:Mn, dilute magnetic semiconductor (DMS), dilute magnetic oxide (DMO), spintronics, magnetism, paramagnetism, ferromagnetism.

  2. Nanocrystals for electronics.

    PubMed

    Panthani, Matthew G; Korgel, Brian A

    2012-01-01

    Semiconductor nanocrystals are promising materials for low-cost large-area electronic device fabrication. They can be synthesized with a wide variety of chemical compositions and size-tunable optical and electronic properties as well as dispersed in solvents for room-temperature deposition using various types of printing processes. This review addresses research progress in large-area electronic device applications using nanocrystal-based electrically active thin films, including thin-film transistors, light-emitting diodes, photovoltaics, and thermoelectrics.

  3. Design of a multi-coordinating polymer as a platform for functionalizing metal, metal oxide and semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Wentao; Ji, Xin; Kapur, Anshika; Mattoussi, Hedi

    2016-03-01

    We introduce a new set of amphiphilic polymers as multifunctional, metal-coordinating ligands adapted to surfacefunctionalize quantum dots (QDs), iron oxide nanoparticles (IONPs) and gold nanoparticles/nanorods (AuNPs/AuNRs). The ligand design relies on the introduction of several anchoring groups, hydrophilic moieties and reactive functionalities into a polymer chain, via one-step nucleophilic addition reaction. Such synthetic scheme also allows the insertion of target biomolecules during the ligand synthesis. This functionalization strategy yields nanocrystals that exhibit long-term colloidal stability over a broad range of biological conditions, such as pH changes and when mixed with growth media. When zwitterion groups are used as hydrophilic motifs, this provides compact nanocrystals that are compatible with conjugation to proteins via metal-polyhistidine self-assembly. In addition, we show that QDs ligated with these polymers can engage in energy or charge transfer interactions. Furthermore, nanocrystals coated with folic acid-modified polymers could promote the delivery of nanoparticle-conjugates into cancer cells via folate receptormediated endocytosis.

  4. Interface control of electronic and optical properties in IV-VI and II-VI core/shell colloidal quantum dots: a review.

    PubMed

    Jang, Youngjin; Shapiro, Arthur; Isarov, Maya; Rubin-Brusilovski, Anna; Safran, Aron; Budniak, Adam K; Horani, Faris; Dehnel, Joanna; Sashchiuk, Aldona; Lifshitz, Efrat

    2017-01-17

    Semiconductor colloidal quantum dots (CQDs) have attracted vast scientific and technological interest throughout the past three decades, due to the unique tuneability of their optoelectronic properties by variation of size and composition. However, the nanoscale size brings about a large surface-to-bulk volume ratio, where exterior surfaces have a pronounced influence on the chemical stability and on the physical properties of the semiconductor. Therefore, numerous approaches have been developed to gain efficient surface passivation, including a coverage by organic or inorganic molecular surfactants as well as the formation of core/shell heterostructures (a semiconductor core epitaxially covered by another semiconductor shell). This review focuses on special designs of core/shell heterostructures from the IV-VI and II-VI semiconductor compounds, and on synthetic approaches and characterization of the optical properties. Experimental observations revealed the formation of core/shell structures with type-I or quasi-type-II band alignment between the core and shell constituents. Theoretical calculations of the electronic band structures, which were also confirmed by experimental work, exposed surplus electronic tuning (beyond the radial diameter) with adaptation of the composition and control of the interface properties. The studies also considered strain effects that are created between two different semiconductors. It was disclosed experimentally and theoretically that the strain can be released via the formation of alloys at the core-shell interface. Overall, the core/shell and core/alloyed-shell heterostructures showed enhancement in luminescence quantum efficiency with respect to that of pure cores, extended lifetime, uniformity in size and in many cases good chemical sustainability under ambient conditions.

  5. Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

    NASA Astrophysics Data System (ADS)

    Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

    1999-05-01

    We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

  6. LDRD-LW Final Report: 07-LW-041 "Magnetism in Semiconductor Nanocrystals: New Physics at the Nanoscale"

    SciTech Connect

    Meulenberg, R W; Lee, J I; McCall, S K

    2009-10-19

    The work conducted in this project was conducted with the aim of identifying and understanding the origin and mechanisms of magnetic behavior in undoped semiconductor nanocrystals (NCs), specifically those composed of CdSe. It was anticipated that the successful completion of this task would have the effect of addressing and resolving significant controversy over this topic in the literature. Meanwhile, application of the resultant knowledge was expected to permit manipulation of the magnetic properties, particularly the strength of any magnetic effects, which is of potential relevance in a range of advanced technologies. More specifically, the project was designed and research conducted with the goal of addressing the following series of questions: (1) How does the magnitude of the magnetism in CdSe NCs change with the organic molecules used to passivate their surface the NC size? i.e. Is the magnetism an intrinsic effect in the nanocrystalline CdSe (as observed for Au NCs) or a surface termination driven effect? (2) What is the chemical (elemental) nature of the magnetism? i.e. Are the magnetic effects associated with the Cd atoms or the Se atoms or both? (3) What is/are the underlying mechanism(s)? (4) How can the magnetism be controlled for further applications? To achieve this goal, several experimental/technical milestones were identified to be fulfilled during the course of the research: (A) The preparation of well characterized CdSe NCs with varying surface termination (B) Establishing the extent of the magnetism of these NCs using magnetometry (particularly using superconducting interference device [SQUID]) (C) Establishing the chemical nature of the magnetism using x-ray magnetic circular dichroism (XMCD) - the element specific nature of the technique allows identification of the element responsible for the magnetism (D) Identification of the effect of surface termination on the empty densities of states (DOS) using x-ray absorption spectroscopy (XAS

  7. Nanocrystal diffusion doping.

    PubMed

    Vlaskin, Vladimir A; Barrows, Charles J; Erickson, Christian S; Gamelin, Daniel R

    2013-09-25

    A diffusion-based synthesis of doped colloidal semiconductor nanocrystals is demonstrated. This approach involves thermodynamically controlled addition of both impurity cations and host anions to preformed seed nanocrystals under equilibrium conditions, rather than kinetically controlled doping during growth. This chemistry allows thermodynamic crystal compositions to be prepared without sacrificing other kinetically trapped properties such as shape, size, or crystallographic phase. This doping chemistry thus shares some similarities with cation-exchange reactions, but proceeds without the loss of host cations and excels at the introduction of relatively unreactive impurity ions that have not been previously accessible using cation exchange. Specifically, we demonstrate the preparation of Cd(1-x)Mn(x)Se (0 ≤ x ≤ ∼0.2) nanocrystals with narrow size distribution, unprecedentedly high Mn(2+) content, and very large magneto-optical effects by diffusion of Mn(2+) into seed CdSe nanocrystals grown by hot injection. Controlling the solution and lattice chemical potentials of Cd(2+) and Mn(2+) allows Mn(2+) diffusion into the internal volumes of the CdSe nanocrystals with negligible Ostwald ripening, while retaining the crystallographic phase (wurtzite or zinc blende), shape anisotropy, and ensemble size uniformity of the seed nanocrystals. Experimental results for diffusion doping of other nanocrystals with other cations are also presented that indicate this method may be generalized, providing access to a variety of new doped semiconductor nanostructures not previously attainable by kinetic routes or cation exchange.

  8. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration.

  9. Small clusters of II-VI materials: ZniOi, i=1-9

    NASA Astrophysics Data System (ADS)

    Matxain, Jon M.; Fowler, Joseph E.; Ugalde, Jesus M.

    2000-11-01

    Improvements in the characterization of II-VI compound-based solar cells, and the recent experimental characterization of small clusters and nanoparticles, make the study of small II-VI clusters very interesting. In this work, the ground states of small ZniOi clusters are studied, where i=1-9. Ringlike structures have been found to be the global minima for clusters as large as i=7, and three-dimensional spheroid structures for larger ones, where i=8 and 9. This is due to the stability of obtuse O-Zn-O angles in the first case, and to the stability gained from higher coordination in the second case. Three-dimensional structures may be envisioned as being built from Zn2O2 and Zn3O3 rings, as was the case for ZnS three-dimensional global minima and other ZnO calculations. Calculated natural orbital charges become larger as the cluster size increases, showing a tendency toward bulk charges.

  10. Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

  11. Small clusters of II-VI materials: ZniSi, i=1-9

    NASA Astrophysics Data System (ADS)

    Matxain, Jon M.; Fowler, Joseph E.; Ugalde, Jesus M.

    2000-05-01

    The improvements in the characterization of II-VI compound-based solar cells and the recent experimental characterization of small clusters and nanoparticles make the study of small II-VI clusters very interesting. In this work, the ground states of small ZniSi clusters are studied, i=1-9. Ringlike structures have been found to be the global minima in the case of the smaller studied clusters, i.e., i=1-5, and three-dimensional spheroid structures for larger ones, i=6-9. This is due to the stability of obtuse S-Zn-S angles in the first case, and to the stability gained from higher coordination in the second case. The three-dimensional structures may be envisioned as being built from Zn2S2 and Zn3S3 rings, the last ring being the building block of the zinc-sulfide crystal structures, both zinc blende and wurtzite. As cluster size increases, the geometry of the Zn3S3 rings is closer to the one of bulk. Moreover, this structural tendency produces trends to bulklike properties in other properties such as cohesive energy and atomic charges.

  12. Germanium Nanocrystal Solar Cells

    NASA Astrophysics Data System (ADS)

    Holman, Zachary Charles

    Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry

  13. New quantum cascade laser architectures: II-VI quantum cascade emitters, high k-space lasing, and short injectors

    NASA Astrophysics Data System (ADS)

    Franz, Kale J.

    Quantum cascade (QC) lasers are today's most capable mid-infrared light sources. With up to watt-level room temperature emission over a broad swath of mid-infrared wavelengths, these tiny semiconductor devices enable a variety of applications and technologies such as ultra-sensitive systems for detecting trace molecules in the vapor phase. The foundation of a QC structure lies in alternating hundreds of wide- and narrow-bandgap semiconductor layers to form a coupled quantum well system. In this way, the laws of quantum mechanics are used to precisely engineer electron transport and create artificial optical transitions. The result is a material with capabilities not found in nature, a truly "designer" material. As a central theme in this thesis, we stress the remarkable flexibility of the quantum cascade---the ability to highly tailor device structure for creative design concepts. The QC idea, in fact, relies on no particular material system for its implementation. While all QC lasers to date have been fabricated from III--V materials such as InGaAs/AlInAs, I detail our preliminary work on ZnCdSe/ZnCdMgSe---a II--VI materials system---where we have demonstrated electroluminescence. We then further discuss how the inherent QC flexibility can be exploited for new devices that extend QC performance and capabilities. In this regard, we offer the examples of excited state transitions and short injectors. Excited state transitions are an avenue to enhancing optical gain, which is especially needed for longer-wavelength devices where optical losses hinder performance. Likewise, shortening the QC injector length over a conventional QC structure has powerful implications for threshold current, output power, and wall-plug efficiency. In both cases, novel physical effects are discovered. Pumping electrons into highly excited states led to the discovery of high k-space lasing from highly non-equilibrium electron distributions. Shortening QC injector regions allowed us to

  14. Half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Akai, H; Ogura, M

    2006-07-14

    The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.

  15. Hydrogen in anion vacancies of semiconductors

    SciTech Connect

    Du, Mao-Hua; Singh, David J

    2009-01-01

    Density functional calculations show that, depending on the anion size, hydrogen in anion vacancies of various II-VI semiconductors can be either two-fold or four-fold coordinated, and has either amphoteric or shallow donor character. In general, the multi-coordination of hydrogen in an anion vacancy is the indication of an anionic H, H { ion, in the relatively ionic environment. In more covalent semiconductors, H would form a single cation-H bond in the anion vacancy.

  16. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

    DOE PAGES

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; ...

    2015-12-07

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from themore » OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.« less

  17. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

    PubMed

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-21

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  18. Chemical design of nanocrystal solids.

    PubMed

    Kovalenko, Maksym V

    2013-01-01

    This account highlights our recent and present activities dedicated to chemical synthesis and applications of inorganic nanostructures. In particular, we discuss the potential of metal amides as precursors in the synthesis of metallic and semiconductor nanocrystals. We show the importance of surface chemical functionalization for the emergence of collective electronic properties in nanocrystal solids. We also demonstrate a new kind of long-range ordered, crystalline matter comprising colloidal nanocrystals and atomically defined inorganic clusters. Finally, we point the reader's attention to the high potential benefits of size- and shape-tunability of nanocrystals for achieving higher performance of rechargeable Li-ion battery electrodes.

  19. Absorption properties of one- and two-dimensional semiconductor nanocrystals in the presence of an electric field

    NASA Astrophysics Data System (ADS)

    Tepliakov, N. V.; Leonov, M. Yu.; Baranov, A. V.; Fedorov, A. V.; Rukhlenko, I. D.

    2017-01-01

    We have considered the broadening of optical absorption spectra of ensembles of randomly oriented nanorods and nanoplatelets that is caused by the action of a static electric field. It has been found that the linewidth in the spectra of the considered nanocrystals depends nonlinearly on the field strength and attains saturation in fields on the order of 100 kV/cm. We show that, due to a weak confinement, the electrooptical response of nanoplatelets is stronger than that of nanorods, which leads to a number of distinctive features in the field-induced broadening of the spectra of nanoplatelets and gives grounds to state that nanoplatelets are the most promising objects for use in electrooptical devices.

  20. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  1. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    DOEpatents

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  2. Graded core/shell semiconductor nanorods and nanorod barcodes

    SciTech Connect

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  3. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  4. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    SciTech Connect

    Zhang, Tian Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  5. Boîtes quantiques II-VI comme sources de photons uniques

    NASA Astrophysics Data System (ADS)

    Couteau, C.; Moehl, S.; Tinjod, F.; Suffczynski, J.; Romestain, R.; Vial, J.-C.; Gérard, J.-M.; Kheng, K.; Poizat, J.-P.

    2004-11-01

    Dans le cadre de l'information et de la communication quantique, la nécessité d'avoir des photons uniques monomodes et à la demande se révèle cruciale. De récents travaux théoriques ont montré la possibilité de réaliser des portes logiques quantiques n'utilisant que de l'optique linéaire. C'est dans ce contexte que s'insère notre travail sur l'élaboration et l'utilisation de boîtes quantiques semi-conductrices II-VI comme “pistolet” à photons. Des expériences de dégroupement et d'interférences à 2 photons sont les premiers pas nécessaires pour caractériser notre source.

  6. Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Martyshkin, D. V.; Kim, C.; Moskalev, I. S.; Fedorov, V. V.; Mirov, S. B.

    2008-02-01

    Here we report a new method for transition-metal (TM) doped II-VI Quantum Dots (QD) fabrication and first mid-IR (2-3 μm) lasing at 77K of Cr 2+:ZnS QD powder (~ 27 nm grain size). Cr 2+:ZnS nanocrystalline dots (NCDs) were prepared using laser ablation. The mid-IR photoluminescence (PL) and lasing were studied. The dependence of PL spectrum profile on pump energy demonstrated a threshold behavior accompanied by the appearance of a sharp stimulated emission band around 2230 nm. The stimulated emission band is shifted to the longer wavelength with respect to the spontaneous emission and corresponds to the peak of the Cr:ZnS gain spectrum. This was also accompanied by a considerable lifetime shortening.

  7. Homogeneous linewidth of confined electron-hole-pair states in II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Woggon, U.; Gaponenko, S.; Langbein, W.; Uhrig, A.; Klingshirn, C.

    1993-02-01

    We present results of nanosecond-hole-burning experiments of small CdSe and CdS1-xSex quantum dots embedded in glass at various temperatures. The spectral width of the holes exhibits a complex interplay between excitation conditions and illumination history. Among a great variety of investigated II-VI quantum dots in glasses from various sources, we find, after strong laser illumination, samples showing spectrally narrow holes similar to those reported for quantum dots embedded in organic matrices with interfaces well defined by organic groups. These sharp nonlinear resonances with a halfwidth Γ of only 10 meV at T=20 K allow one to investigate the energetic distance of the lowest hole levels and the temperature dependence of the homogeneous line broadening. The differences in the linewidth in the hole-burning spectra are attributed to changes of interface charge states or interface polarizations under high excitation.

  8. Green monolithic II-VI vertical-cavity surface-emitting laser operating at room temperature

    NASA Astrophysics Data System (ADS)

    Kruse, C.; Ulrich, S. M.; Alexe, G.; Roventa, E.; Kröger, R.; Brendemühl, B.; Michler, P.; Gutowski, J.; Hommel, D.

    2004-02-01

    The realization of a monolithic all II-VI-based vertical cavity surface emitting laser (VCSEL) for the green spectral region is reported. Optically pumped lasing operation was achieved up to room temperature using a planar VCSEL structure. Taking advantage of distributed Bragg-reflectors based on MgS/Zn(Cd)Se superlattices as the low-refractive index material and ZnS0.06Se0.94 layers as the high-index material with a refractive index contrast of n = 0.6, a quality factor exceeding Q = 2000 is reached by using only 18 Bragg periods for the bottom DBR and 15 Bragg periods for the top DBR. The threshold power density is 0.32 MW/cm2 at a temperature of 10 K (emission wavelength 498.5 nm) and 1.9 MW/cm2 at room temperature (emission wavelength 502.3 nm).

  9. Mid-IR luminescence of Cr{sup 2+} : II - VI crystals in chalcogenide glass fibres

    SciTech Connect

    Mironov, Roman A; Zabezhailov, A O; Dianov, Evgenii M; Karaksina, E V; Shapashnikov, R M; Churbanov, M F

    2010-11-13

    Optical fibres have been fabricated for the first time from As{sub 2}S{sub 3} glass containing chromium-doped ZnS and ZnSe crystals, and their optical loss and luminescence spectra have been measured in the mid-IR. In the spectral range 2 - 3 {mu}m, the optical loss in the fibres is 2 - 4 dB m{sup -1}. The fibres have a broad luminescence band in the range 1.8 - 3 {mu}m, with a maximum near 1.9 {mu}m, which is due to Cr{sup 2+} {sup 5}E - {sup 5}T{sub 2} intracentre transitions in the II - VI host. (fibre optics)

  10. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    DOE PAGES

    Kang, Joongoo; Park, Ji -Sang; Stradins, Pauls; ...

    2017-07-13

    In this paper, nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and opticalmore » properties of the nonisovalent alloys.« less

  11. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    NASA Astrophysics Data System (ADS)

    Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls; Wei, Su-Huai

    2017-07-01

    Nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent S i2AlP (or S i2ZnS ) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, S i2AlP (or S i2ZnS ) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

  12. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  13. Universal behavior of electron g -factors in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Tadjine, Athmane; Niquet, Yann-Michel; Delerue, Christophe

    2017-06-01

    We combine analytic developments and numerical tight-binding calculations to study the evolution of the electron g -factors in homogeneous nanostructures of III-V and II-VI semiconductors. We demonstrate that the g -factor can be always written as a sum of bulk and surface terms. The bulk term, the dominant one, just depends on the energy gap of the nanostructure but is otherwise isotropic and independent of size, shape, and dimensionality. At the same time, the magnetic moment density at the origin of the bulk term is anisotropic and strongly dependents on the nanostructure shape. The physical origin of these seemingly contradictory findings is explained by the relation between the spin-orbit-induced currents and the spatial derivatives of the electron envelope wave function. The tight-binding calculations show that the g -factor versus energy gap for spherical nanocrystals can be used as a reference curve. In quantum wells, nanoplatelets, nanorods, and nanowires, the g -factor along the rotational symmetry axis can be predicted from the reference curve with a good accuracy. The g -factors along nonsymmetric axes exhibit more important deviations due to surface contributions but the energy gap remains the main quantity determining their evolution. The importance of surface-induced anisotropies of the g -factors is discussed.

  14. Sorting fluorescent nanocrystals with DNA

    SciTech Connect

    Gerion, Daniele; Parak, Wolfgang J.; Williams, Shara C.; Zanchet, Daniela; Micheel, Christine M.; Alivisatos, A. Paul

    2001-12-10

    Semiconductor nanocrystals with narrow and tunable fluorescence are covalently linked to oligonucleotides. These biocompounds retain the properties of both nanocrystals and DNA. Therefore, different sequences of DNA can be coded with nanocrystals and still preserve their ability to hybridize to their complements. We report the case where four different sequences of DNA are linked to four nanocrystal samples having different colors of emission in the range of 530-640 nm. When the DNA-nanocrystal conjugates are mixed together, it is possible to sort each type of nanoparticle using hybridization on a defined micrometer -size surface containing the complementary oligonucleotide. Detection of sorting requires only a single excitation source and an epifluorescence microscope. The possibility of directing fluorescent nanocrystals towards specific biological targets and detecting them, combined with their superior photo-stability compared to organic dyes, opens the way to improved biolabeling experiments, such as gene mapping on a nanometer scale or multicolor microarray analysis.

  15. 3D assembly of semiconductor and metal nanocrystals: hybrid CdTe/Au structures with controlled content.

    PubMed

    Lesnyak, Vladimir; Wolf, André; Dubavik, Aliaksei; Borchardt, Lars; Voitekhovich, Sergei V; Gaponik, Nikolai; Kaskel, Stefan; Eychmüller, Alexander

    2011-08-31

    A 3D metal ion assisted assembly of nanoparticles has been developed. The approach relies on the efficient complexation of cadmium ions and 5-mercaptomethyltetrazole employed as the stabilizer of both colloidal CdTe and Au nanoparticles. It enables in a facile way the formation of hybrid metal-semiconductor 3D structures with controllable and tunable composition in aqueous media. By means of critical point drying, these assemblies form highly porous aerogels. The hybrid architectures obtained are characterized by electron microscopy, nitrogen adsorption, and optical spectroscopy methods.

  16. Substitutional doping in nanocrystal superlattices

    NASA Astrophysics Data System (ADS)

    Cargnello, Matteo; Johnston-Peck, Aaron C.; Diroll, Benjamin T.; Wong, Eric; Datta, Bianca; Damodhar, Divij; Doan-Nguyen, Vicky V. T.; Herzing, Andrew A.; Kagan, Cherie R.; Murray, Christopher B.

    2015-08-01

    Doping is a process in which atomic impurities are intentionally added to a host material to modify its properties. It has had a revolutionary impact in altering or introducing electronic, magnetic, luminescent, and catalytic properties for several applications, for example in semiconductors. Here we explore and demonstrate the extension of the concept of substitutional atomic doping to nanometre-scale crystal doping, in which one nanocrystal is used to replace another to form doped self-assembled superlattices. Towards this goal, we show that gold nanocrystals act as substitutional dopants in superlattices of cadmium selenide or lead selenide nanocrystals when the size of the gold nanocrystal is very close to that of the host. The gold nanocrystals occupy random positions in the superlattice and their density is readily and widely controllable, analogous to the case of atomic doping, but here through nanocrystal self-assembly. We also show that the electronic properties of the superlattices are highly tunable and strongly affected by the presence and density of the gold nanocrystal dopants. The conductivity of lead selenide films, for example, can be manipulated over at least six orders of magnitude by the addition of gold nanocrystals and is explained by a percolation model. As this process relies on the self-assembly of uniform nanocrystals, it can be generally applied to assemble a wide variety of nanocrystal-doped structures for electronic, optical, magnetic, and catalytic materials.

  17. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, S.; Li, C.; Scripa, R.; Lehoczky, S. L.; Kim, Y. M.; Baird, J. K.; Lin, B.; Ban, H.; Benmore, Chris; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed

  18. Room temperature and high responsivity short wavelength II-VI quantum well infrared photodetector

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind P.; Chen, Guopeng; Zhao, Kuaile; Tian, Yue; Prucnal, Paul; Tamargo, Maria C.; Gmachl, Claire F.; Shen, Aidong

    2013-04-01

    We report the experimental demonstration of a room temperature, high responsivity, short wavelength II-VI Zn0.51Cd0.49Se/Zn0.29Cd0.26Mg0.45Se based quantum well infrared photodetector operating between 3 and 5 μm. Spectral response was observed up to room temperature with a cut off wavelength of 5 μm at 280 K. Measurements with a calibrated blackbody source yielded a peak responsivity of over 30 A/W at 280 K and an applied bias of -3 V. The dark current limited peak detectivity at 80 K and 280 K were measured to be 2 × 109 cm √Hz/W and 4 × 107 cm √Hz/W, respectively. These results are consistent with theoretical calculations that predict a maximum detectivity of the order of 107 cm √Hz/W at room temperature for typical carrier lifetimes and optimized doping levels.

  19. Biexciton in II-VI quantum dots with different localization potentials

    NASA Astrophysics Data System (ADS)

    Golovatenko, A. A.; Semina, M. A.; Rodina, A. V.; Shubina, T. V.

    2017-06-01

    We present a comparative study of the influence of the form of a localization potential on the binding energy of the biexciton in spherically symmetric quantum dots based on II-VI compounds. The proposed criterion for the comparison of potentials of different forms—the box potential, the harmonic oscillator, and the Gaussian potential—is based on the identical localization of charge carriers of the same sign in these potentials. Calculations of the biexciton binding energy have been performed using the variational method within the framework of the kp-perturbation theory taking into account additional polarization terms in the wave functions of the electron and hole subsystems, as well as the complex structure of the valence band. The obtained results have demonstrated that the presence of a smoothly varying finite-height potential in Cd(Zn)Se/ZnSe quantum dots can lead to a more efficient localization in the case of the biexciton in comparison with the exciton, which is of interest for the implementation of fast-acting quantum light emitters.

  20. Batatinosides II-VI, acylated lipooligosaccharides from the resin glycosides of sweet potato.

    PubMed

    Escalante-Sánchez, Edgar; Rosas-Ramírez, Daniel; Linares, Edelmira; Bye, Robert; Pereda-Miranda, Rogelio

    2008-10-22

    Sweet potato ( Ipomoea batatas) belongs to the Convolvulaceae (morning glory family) and is native to Mexico and Central America. Its edible tuberous roots have been much appreciated since pre-Hispanic times in Mesoamerica and now play an important role as a basic diet staple and a medicinal plant worldwide. The hexane-soluble extract from roots, through preparative-scale recycling HPLC, yielded five new lipophilic oligosaccharides of jalapinolic acid, batatinosides II-VI ( 1- 5), as well as the known pescapreins I ( 6) and VII ( 7) and murucoidin I ( 8), which are part of the purgative resin glycoside mixture. NMR spectroscopy and FAB mass spectrometry were used to characterize their structures. Compounds 1 and 2 are tetraglycosidic lactones of operculinic acid C. The pentasaccharide structures for compounds 3 and 4 were confirmed to be macrolactones of simonic acid B, and that characterized for 5 was derived from operculinic acid A. The lactonization site of the aglycone was placed at C-3 of the second saccharide unit in all compounds except 4, where it was placed at C-2. All compounds contain an esterifying residue that is composed of a long-chain fatty acid, n-decanoic acid (capric) or n-dodecanoic acid (lauric). In compound 3, an additional short-chain fatty acid, (2 S)-methylbutyric acid, was also identified.

  1. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-11-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current ( I D)-gate voltage ( V G) and drain current ( I D)-drain voltage ( V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D- V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  2. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  3. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  4. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  5. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  6. Real-Time Observation of Morphological Transformations in II-VI Semiconducting Nanobelts via Environmental Transmission Electron Microscopy.

    PubMed

    Agarwal, Rahul; Zakharov, Dmitri N; Krook, Nadia M; Liu, Wenjing; Berger, Jacob S; Stach, Eric A; Agarwal, Ritesh

    2015-05-13

    It has been observed that wurtzite II-VI semiconducting nanobelts transform into single-crystal, periodically branched nanostructures upon heating. The mechanism of this novel transformation has been elucidated by heating II-VI nanobelts in an environmental transmission electron microscope (ETEM) in oxidizing, reducing, and inert atmospheres while observing their structural changes with high spatial resolution. The interplay of surface reconstruction of high-energy surfaces of the wurtzite phase and environment-dependent anisotropic chemical etching of certain crystal surfaces in the branching mechanism of nanobelts has been observed. Understanding of structural and chemical transformations of materials via in situ microscopy techniques and their role in designing new nanostructured materials is discussed.

  7. Calculated electronic structures and Néel temperatures of half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Ogura, M; Takahashi, C; Akai, H

    2007-09-12

    The possibility of half-metallic diluted antiferromagnetic semiconductors of II-VI compounds is investigated on the basis of first-principles electronic structure calculation. The electronic structures of ZnS, ZnSe, ZnO, CdS and CdSe doped with two kinds of 3d transition metal ions are calculated using the Korringa-Kohn-Rostoker (KKR) method and their magnetic transition temperatures are determined using a cluster-type approximation. It is predicted that II-VI compound semiconductors doped with two kinds of magnetic ions might be good candidates for half-metallic antiferromagnets.

  8. 25th anniversary article: Ion exchange in colloidal nanocrystals.

    PubMed

    Gupta, Shuchi; Kershaw, Stephen V; Rogach, Andrey L

    2013-12-23

    We review the progress in ion exchange in a variety of nanocrystal structures from the earliest accounts dating back over two decades ago to the present day. In recent years the number of groups using this method to form otherwise difficult or inaccessible nanoparticle shapes and morphologies has increased considerably and the field has experienced a resurgence of interest. Whilst most of the early work on cation exchange centered on II-VI materials, the methodology has been expanded to cover a far broader range of semiconductor nanocrystals including low toxicity I-III-VI materials and the much less facile III-V materials. The extent of exchange can be controlled leading to lightly doped nanoparticles, alloys, core-shells, segmented rods and dots-in-rods. Progress has been driven by a better understanding of the underlying principles of the exchange process - from thermodynamic factors (differences in cation solubilities); the interactions between ions and transfer agents (solvents, ligands, anions, co-dopants); ionic in-diffusion mechanisms and kinetics. More recent availability of very detailed electron microscopy coupled with image reconstruction techniques has been a valuable tool to investigate the resulting heterostructures and internal interfaces. We start by surveying the range of synthetic approaches most often used to carry out ion exchange, mainly focusing on cation replacement strategies, and then describe the rich variety of nanostructures these techniques can bring forth. We also describe some of the principles that are used to establish the relative ease of exchange and to systematically improve the process where the basic energetics are less favorable. To help further the understanding of the underlying fundamentals we have gathered together useful data from the literature on solubilities, cation and anion hardness, ligand and solvent Lewis acid or base strengths for a wide range of chemical species generally used. We offer a perspective on the

  9. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2010-04-06

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

  10. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G [Boston, MA; Sundar, Vikram C [New York, NY

    2008-02-05

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties

  11. Robust Topological Interfaces and Charge Transfer in Epitaxial Bi2Se3/II-VI Semiconductor Superlattices.

    PubMed

    Chen, Zhiyi; Zhao, Lukas; Park, Kyungwha; Garcia, Thor Axtmann; Tamargo, Maria C; Krusin-Elbaum, Lia

    2015-10-14

    Access to charge transport through Dirac surface states in topological insulators (TIs) can be challenging due to their intermixing with bulk states or nontopological two-dimensional electron gas (2DEG) quantum well states caused by bending of electronic bands near the surface. The band bending arises via charge transfer from surface adatoms or interfaces and, therefore, the choice of layers abutting topological surfaces is critical. Here we report molecular beam epitaxial growth of Bi2Se3/ZnxCd1-xSe superlattices that hold only one topological surface channel per TI layer. The topological nature of conducting channels is supported by π-Berry phase evident from observed Shubnikov de Haas quantum oscillations and by the associated two-dimensional (2D) weak antilocalization quantum interference correction to magnetoresistance. Both density functional theory (DFT) calculations and transport measurements suggest that a single topological Dirac cone per TI layer can be realized by asymmetric interfaces: Se-terminated ZnxCd1-xSe interface with the TI remains "electronically intact", while charge transfer occurs at the Zn-terminated interface. Our findings indicate that topological transport could be controlled by adjusting charge transfer from nontopological spacers in hybrid structures.

  12. Recent developments of hybrid nanocrystal/polymer bulk heterojunction solar cells.

    PubMed

    Tang, Aiwei; Qu, Shengchun; Teng, Feng; Hou, Yanbing; Wang, Yongsheng; Wang, Zhanguo

    2011-11-01

    Hybrid nanocrystal/polymer bulk heterojunction (BHJ) solar cells consisting of colloidal inorganic semiconductor nanocrystals as electron acceptors and conjugated polymers as electron donors have been extensively investigated in the past few decades, which take advantage of the strongpoints of the inorganic semiconductor nanocrystals and the conjugated polymers. Currently, power conversion efficiency over 3% for the hybrid nanocrystal/polymer BHJ solar cells has been achieved. Although the development of hybrid nanocrystal/polymer BHJ solar cells lacks behind the international level, great progress in this research field has been made in China. In this article, we first review the general fabrication techniques and general working principles of hybrid nanocrystal/polymer BHJ solar cells. Secondly, we highlight the international and national developments of hybrid nanocrystal/polymer BHJ solar cells based on different types of semiconductor nanocrystals and conjugated polymers. Finally, we give a future outlook for the hybrid nanocrystal/polymer BHJ solar cells in the worldwide.

  13. Solidification of II-VI Compounds in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Volz, M. P.; Mazuruk, K.; Motakef, S.; Dudley, M.; Matyi, R.

    1999-01-01

    This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow

  14. Electronic Levels Of Cr2+ Ion Doped In II-VI Compounds Of ZnS - Crystal Field Treatment

    NASA Astrophysics Data System (ADS)

    Ivaşcu, Simona

    2012-12-01

    The aim of present paper is to report the results on the modeling of the crystal field and spin-Hamiltonian parameters of Cr2+ doped in II-VI host matrix ZnS and simulate the energy levels scheme of such system taken into account the fine interactions entered in the Hamiltonian of the system. All considered types of such interaction are expected to give information on the new peculiarities of the absorption and emission bands, as well as of non-radiative transitions between the electronic states of impurity ions. The obtained results were disscused, compared with similar obtained results in literature and with experimental data.

  15. Laser cooling in semiconductors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Zhang, Jun

    2017-06-01

    Laser cooling of semiconductor is very important topic in science researches and technological applications. Here we will report our progresses on laser cooling in semiconductors. By using of strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, we observe a net cooling by about 40 K starting from 290 kelvin with 514-nm pumping and about 15 K starting from100 K with 532-nm pumping in a semiconductor using group-II-VI cadmium sulphide nanobelts. We also discuss the thickness dependence of laser cooing in CdS nanobelts, a concept porotype of semiconductor cryocooler and possibility of laser cooling in II-VI semiconductor family including CdSSe、CdSe, CdSe/ZnTe QDs and bulk CdS et al., Beyond II-VI semiconductor, we will present our recent progress in laser cooling of organic-inorganic perovskite materials, which show a very big cooling power and external quantum efficiency in 3D and 2D case. Further more, we demonstrate a resolved sideband Raman cooling of a specific LO phonon in ZnTe, in which only one specific phonon resonant with exciton can be cooled or heated. In the end, we will discuss the nonlinear anti-Stokes Raman and anti-Stokes photoluminescence upcoversion in very low temperature as low as down to liquid 4.2 K. In this case, the anti-Stokes resonance induces a quadratic power denpendece of anti-Stokes Raman and anti-Stokes PL. We proposed a CARS-like process to explain it. This nonlinear process also provides a possible physics picture of ultra-low temperatures phonon assisted photoluminescence and anti-Stokes Raman process.

  16. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    NASA Technical Reports Server (NTRS)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  17. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    NASA Technical Reports Server (NTRS)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  18. Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

    NASA Astrophysics Data System (ADS)

    Wierts, A.; Ulloa, J. M.; ćelebi, C.; Koenraad, P. M.; Boukari, H.; Maingault, L.; André, R.; Mariette, H.

    2007-10-01

    Cross-sectional scanning tunneling microscopy is used to study in the atomic scale the structural properties of ZnSeTe /ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been observed in III-V semiconductors. In particular, cleavage induced monatomic wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain positive voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe /ZnTe quantum wells are found to have abrupt interfaces and the Se concentration is determined to be significantly larger than the nominal value.

  19. Investigation of Co, Ni and Fe Doped II-VI Chalcogenides

    DTIC Science & Technology

    2013-01-04

    The parameter Dq, which depends on the charge of an electron, has a different sign for an iso electron-hole configuration. Thus, the Dq parameter...for the hole configuration of ions of the iron group in tetrahedral semiconductor crystals is positive. It is also positive for the case of an iso ...the energies and configuration coordinate values for the absorption and emission transitions. -1 0 1 -25000 -24000 -23000 - 22000 -21000 -20000

  20. Biomolecular Assembly of Gold Nanocrystals

    SciTech Connect

    Micheel, Christine Marya

    2005-05-20

    Over the past ten years, methods have been developed to construct discrete nanostructures using nanocrystals and biomolecules. While these frequently consist of gold nanocrystals and DNA, semiconductor nanocrystals as well as antibodies and enzymes have also been used. One example of discrete nanostructures is dimers of gold nanocrystals linked together with complementary DNA. This type of nanostructure is also known as a nanocrystal molecule. Discrete nanostructures of this kind have a number of potential applications, from highly parallel self-assembly of electronics components and rapid read-out of DNA computations to biological imaging and a variety of bioassays. My research focused in three main areas. The first area, the refinement of electrophoresis as a purification and characterization method, included application of agarose gel electrophoresis to the purification of discrete gold nanocrystal/DNA conjugates and nanocrystal molecules, as well as development of a more detailed understanding of the hydrodynamic behavior of these materials in gels. The second area, the development of methods for quantitative analysis of transmission electron microscope data, used computer programs written to find pair correlations as well as higher order correlations. With these programs, it is possible to reliably locate and measure nanocrystal molecules in TEM images. The final area of research explored the use of DNA ligase in the formation of nanocrystal molecules. Synthesis of dimers of gold particles linked with a single strand of DNA possible through the use of DNA ligase opens the possibility for amplification of nanostructures in a manner similar to polymerase chain reaction. These three areas are discussed in the context of the work in the Alivisatos group, as well as the field as a whole.

  1. Direct Binding of Fluorescent CdSe-ZnS Core shell Semiconductor Nanocrystals to Biological Macromolecules: Efficient Tool for Fluorescence Tagging of Biological Macromolecules

    NASA Astrophysics Data System (ADS)

    Mattoussi, Hedi; Anderson, George P.; Mauro, J. Matthew; Goldman, Ellen R.

    2000-03-01

    We present a study that describes a novel and direct approach of binding highly luminescent CdSe-ZnS core-shell nanocrystals to biological molecules for use as fluorescent probes in biosensing and diagnostics. We use dithiol-based groups as the surface capping agent, which provides nanocrystal dispersions with high quantum yield. The approach makes use of a recombinant protein, which binds directly to the dithiol cap, and provides addition stability of the quantum dots in water solutions. Hence stable and highly luminescent bound nanocrystal-biomolecules have been prepared. The present process provides aggregation-free solutions with a high luminescence yield. Combining the properties of the CdSe-ZnS (photochemical stability and wide range of emission wavelengths) and the simple binding approach, the resultant materials provide a sensitive and powerful tool for tagging of biological molecules. We will discuss the chemistry involved and present various characterization studies of these complex systems, such as photoluminescence spectroscopy, high-resolution microscopy. We will also discuss the use of these materials in immunoassays.

  2. Design considerations for II-VI multi-gate transistors: the case of cadmium sulfide

    NASA Astrophysics Data System (ADS)

    Conde, J.; Mejia, I.; Aguirre-Tostado, F. S.; Young, C.; Quevedo-Lopez, M. A.

    2014-04-01

    In this paper, we report a feasibility study of MuGFETs (multi-gate field effect transistors) devices using solution-based cadmium sulfide films as the semiconductor. The simulations were carried out using the commercially available ATLAS simulator. Experimental parameters for CdS were extracted from planar thin film transistors fabricated using photolithography methods. Several critical design parameters for MuGFETs devices were studied, including fin width, fin high, channel length, and CdS carrier concentration. Short-channel effects can be reasonably controlled by reducing either fin height or width. It is shown that is possible to fabricate devices that operate in depletion or enhancement mode by controlling the device structure. ION/IOFF ratio was in the range 108-1010, subthreshold slope was closely related to the geometry of the MuGFET. We also observed that as the CdS carrier concentration decreases, the on-voltage shifts to positive values. Optimized MuGFETs simulated in enhancement mode show excellent subthreshold slope, and ION/IOFF ratio ˜1010. This study demonstrates that CdS can be used to fabricate enhanced mode/depletion mode devices using solution-based semiconductors. Furthermore, all processing is kept at temperatures below 100 °C, which demonstrates that these devices can be used in flexible substrates.

  3. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    DOEpatents

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  4. Size-Dependent Raman Shifts for nanocrystals

    PubMed Central

    Gao, Yukun; Zhao, Xinmei; Yin, Penggang; Gao, Faming

    2016-01-01

    Raman spectroscopy is a very sensitive tool for probing semiconductor nanocrystals. The underlying mechanism behind the size-dependent Raman shifts is still quite controversial. Here we offer a new theoretical method for the quantum confinement effects on the Raman spectra of semiconductor nanocrystals. We propose that the shift of Raman spectra in nanocrystals can result from two overlapping effects: the quantum effect shift and surface effect shift. The quantum effect shift is extracted from an extended Kubo formula, the surface effect shift is determined via the first principles calculations. Fairly good prediction of Raman shifts can be obtained without the use of any adjustable parameter. Closer analysis shows that the size-dependent Raman shifts in Si nanocrystals mainly result from the quantum effect shifts. For nanodiamond, the proportion of surface effect shift in Raman shift is up to about 40%. Such model can also provide a good baseline for using Raman spectroscopy as a tool to measure size. PMID:27102066

  5. Artificial atoms on semiconductor surfaces

    PubMed Central

    Tisdale, W. A.; Zhu, X.-Y.

    2011-01-01

    Semiconductor nanocrystals are called artificial atoms because of their atom-like discrete electronic structure resulting from quantum confinement. Artificial atoms can also be assembled into artificial molecules or solids, thus, extending the toolbox for material design. We address the interaction of artificial atoms with bulk semiconductor surfaces. These interfaces are model systems for understanding the coupling between localized and delocalized electronic structures. In many perceived applications, such as nanoelectronics, optoelectronics, and solar energy conversion, interfacing semiconductor nanocrystals to bulk materials is a key ingredient. Here, we apply the well established theories of chemisorption and interfacial electron transfer as conceptual frameworks for understanding the adsorption of semiconductor nanocrystals on surfaces, paying particular attention to instances when the nonadiabatic Marcus picture breaks down. We illustrate these issues using recent examples from our laboratory. PMID:21097704

  6. Electric field dependent spectroscopy of single nanocrystal systems

    NASA Astrophysics Data System (ADS)

    LeBlanc, Sharonda L. Johnson

    A suite of single molecule spectroscopic techniques and data analysis methods were implemented to explore the complex role of electric fields in single semiconductor nanocrystal photophysics. This dissertation spans the synthesis, characterization, biological applications, and photophysics of semiconductor nanocrystals. The core single molecule techniques employed in the current work include time-resolved fluorescence, time-correlated single photon counting, single molecule spectroscopy, and photon correlation spectroscopy. Various electrode devices were patterned to investigate the optical properties of single nanocrystal systems under an applied electric field. Electric field dependent spectroscopy and data analysis have revealed distributed kinetics and multiple charging of nanocrystals. In addition, interactions of nanocrystal excited states with plasmonic gold films have revealed strong enhancement of multiple exciton emission from single nanocrystals, and control by an applied electric field. The broader implications of this work can be extended to bioimaging, light harvesting, electro-optics, and lasing technologies.

  7. Low Cost, Epitaxial Growth of II-VI Materials for Multijunction Photovoltaic Cells

    SciTech Connect

    Hardin, Brian E.; Peters, Craig H.

    2014-04-30

    Multijunction solar cells have theoretical power conversion efficiencies in excess of 29% under one sun illumination and could become a highly disruptive technology if fabricated using low cost processing techniques to epitaxially grow defect tolerant, thin films on silicon. The PLANT PV/Molecular Foundry team studied the feasibility of using cadmium selenide (CdSe) as the wide band-gap, top cell and Si as the bottom cell in monolithically integrated tandem architecture. The greatest challenge in developing tandem solar cells is depositing wide band gap semiconductors that are both highly doped and have minority carrier lifetimes greater than 1 ns. The proposed research was to determine whether it is possible to rapidly grow CdSe films with sufficient minority carrier lifetimes and doping levels required to produce an open-circuit voltage (Voc) greater than 1.1V using close-space sublimation (CSS).

  8. Measuring the Valence of Nanocrystal Surfaces

    SciTech Connect

    Owen, Jonathan Scharle

    2016-11-30

    The goal of this project is to understand and control the interplay between nanocrystal stoichiometry, surface ligand binding and exchange, and the optoelectronic properties of semiconductor nanocrystals in solution and in thin solid films. We pursued three research directions with this goal in mind: 1) We characterized nanocrystal stoichiometry and its influence on the binding of L-type and X-type ligands, including the thermodynamics of binding and the kinetics of ligand exchange. 2) We developed a quantitative understanding of the relationship between surface ligand passivation and photoluminescence quantum yield. 3) We developed methods to replace the organic ligands on the nanocrystal with halide ligands and controllably deposit these nanocrystals into thin films, where electrical measurements were used to investigate the electrical transport and internanocrystal electronic coupling.

  9. Influence of the electron-phonon interaction on the temperature dependence of the phonon mode frequency in the II-VI compound solid solutions

    SciTech Connect

    Woźny, M. Cebulski, J.; Sheregii, E. M.; Marcelli, A.; Piccinini, M.

    2015-01-14

    We present an experimental investigation of the temperature dependence of the TO-phonon mode frequencies for the HgTe-based II-VI semiconductor solid solutions. In the case of the ternary Hg{sub 0.9}Zn{sub 0.1}Te solid solution was shown a discontinuity in the temperature dependence of the HgTe-like T{sub 0}-mode and of the ZnTe-like T{sub 1}-mode, similar to the Hg{sub 0.85}Cd{sub 0.15}Te system [Sheregii et al., Phys. Rev. Lett. 102, 045504 (2009)]. A generalization of the theoretical temperature shift of the phonon mode frequency as analytic equation is derived that includes both the anharmonic contribution and the electron-phonon e-p interaction which in this case is returnable—the electron subsystem effect on the phonon one. Data show that our equation satisfactorily describes the temperature shift of both Hg{sub 0.85}Cd{sub 0.15}Te and Hg{sub 0.90}Zn{sub 0.10}Te containing Dirac point (E{sub g} ≡ Γ{sub 6} – Γ{sub 8} = 0) although one of the two constants describing the anharmonic shift of the HgTe-like mode should be positive what is abnormal too. In the case of the Hg{sub 0.80}Cd{sub 0.20}Te and Hg{sub 0.763}Zn{sub 0.237}Te solid solution, the role of the returnable e-p contribution is negligible but a positive temperature shift for the HgTe-like modes occurs. This result does not allow to explain the positive temperature shift of these modes merely by the contribution of the (e-p) interaction. Indeed, the relativistic contribution to the chemical bonds induces an abnormal temperature shift of the electron states in Hg-based semiconductors—the effect is expected since the Hg d spin-orbit split contribution to chemical bonds may lead to an abnormal temperature shift of the HgTe-like modes.

  10. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

    SciTech Connect

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; Nykypanchuk, Dmytro; Nam, Chang -Yong

    2015-12-07

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  11. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-07

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  12. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    NASA Astrophysics Data System (ADS)

    Kramer, Nicolaas Johannes

    The impact of nanotechnology on our society is getting larger every year. Electronics are becoming smaller and more powerful, the "Internet of Things" is all around us, and data generation is increasing exponentially. None of this would have been possible without the developments in nanotechnology. Crystalline semiconductor nanoparticles (nanocrystals) are one of the latest developments in the field of nanotechnology. This thesis addresses three important challenges for the transition of silicon nanocrystals from the lab bench to the marketplace: A better understanding of the nanocrystal synthesis was obtained, the electronic properties of the nanocrystals were characterized and tuned, and novel silicon nanocrystal inks were formed and applied using simple coating technologies. Plasma synthesis of nanocrystals has numerous advantages over traditional solution-based synthesis methods. While the formation of nanoparticles in low pressure nonthermal plasmas is well known, the heating mechanism leading to their crystallization is poorly understood. A combination of comprehensive plasma characterization with a nanoparticle heating model presented here reveals the underlying plasma physics leading to crystallization. The model predicts that the nanoparticles reach temperatures as high as 900 K in the plasma as a result of heating reactions on the nanoparticle surface. These temperatures are well above the gas temperature and sufficient for complete nanoparticle crystallization. Moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for industrial applications. The heating and charging model for silicon nanoparticles was adapted in Chapter 3 to study plasmas maintained over a wide range of pressures (10 -- 105 Pa). The model considers three collisionality regimes and determines the dominant contribution of each regime under various plasma conditions. Strong nanoparticle cooling at

  13. Characterization of organic and inorganic optoelectronic semiconductor devices using advanced spectroscopic methods

    NASA Astrophysics Data System (ADS)

    Schroeder, Raoul

    In this thesis, advanced spectroscopy methods are discussed and applied to gain understanding of the physical properties of organic conjugated molecules, II-VI thin film semiconductors, and vertical cavity surface emitting lasers (VCSEL). Experiments include single photon and two-photon excitation with lasers, with subsequent measurements of the absorption and photoluminescence, as well as photocurrent measurements using tungsten and xenon lamps, measuring the direct current and the alternating current of the devices. The materials are investigated in dissolved form (conjugated polymers), thin films (polymers, II-VI semiconductors), and complex layer structures (hybrid device, VCSEL). The experiments are analyzed and interpreted by newly developed or applied theories for two-photon saturation processes in semiconductors, bandgap shrinkage due to optically induced electron hole pairs, and the principle of detailed balance to describe the photoluminescence in thin film cadmium sulfide.

  14. The Surface Chemistry of Metal Chalcogenide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Anderson, Nicholas Charles

    The surface chemistry of metal chalcogenide nanocrystals is explored through several interrelated analytical investigations. After a brief discussion of the nanocrystal history and applications, molecular orbital theory is used to describe the electronic properties of semiconductors, and how these materials behave on the nanoscale. Quantum confinement plays a major role in dictating the optical properties of metal chalcogenide nanocrystals, however surface states also have an equally significant contribution to the electronic properties of nanocrystals due to the high surface area to volume ratio of nanoscale semiconductors. Controlling surface chemistry is essential to functionalizing these materials for biological imaging and photovoltaic device applications. To better understand the surface chemistry of semiconducting nanocrystals, three competing surface chemistry models are presented: 1.) The TOPO model, 2.) the Non-stoichiometric model, and 3.) the Neutral Fragment model. Both the non-stoichiometric and neutral fragment models accurately describe the behavior of metal chalcogenide nanocrystals. These models rely on the covalent bond classification system, which divides ligands into three classes: 1.) X-type, 1-electron donating ligands that balance charge with excess metal at the nanocrystal surface, 2.) L-type, 2-electron donors that bind metal sites, and 3.) Z-type, 2-electron acceptors that bind chalcogenide sites. Each of these ligand classes is explored in detail to better understand the surface chemistry of metal chalcogenide nanocrystals. First, chloride-terminated, tri-n-butylphosphine (Bu 3P) bound CdSe nanocrystals were prepared by cleaving carboxylate ligands from CdSe nanocrystals with chlorotrimethylsilane in Bu3P solution. 1H and 31P{1H} nuclear magnetic resonance spectra of the isolated nanocrystals allowed assignment of distinct signals from several free and bound species, including surface-bound Bu3P and [Bu3P-H]+[Cl]- ligands as well as a Bu

  15. Infrared colloidal lead chalcogenide nanocrystals: synthesis, properties, and photovoltaic applications.

    PubMed

    Fu, Huiying; Tsang, Sai-Wing

    2012-04-07

    Simple solution phase, catalyst-free synthetic approaches that offer monodispersed, well passivated, and non-aggregated colloidal semiconductor nanocrystals have presented many research opportunities not only for fundamental science but also for technological applications. The ability to tune the electrical and optical properties of semiconductor nanocrystals by manipulating the size and shape of the crystals during the colloidal synthesis provides potential benefits to a variety of applications including photovoltaic devices, light-emitting diodes, field effect transistors, biological imaging/labeling, and more. Recent advances in the synthesis and characterization of colloidal lead chalcogenide nanocrystals and the achievements in colloidal PbS or PbSe nanocrystals solar cells have demonstrated the promising application of infrared-emitting colloidal lead chalcogenide nanocrystals in photovoltaic devices. Here, we review recent progress in the synthesis and optical properties of colloidal lead chalcogenide nanocrystals. We focus in particular upon the size- and shape-controlled synthesis of PbS, PbSe, and PbTe nanocrystals by using different precursors and various stabilizing surfactants for the growth of the colloidal nanocrystals. We also summarize recent advancements in the field of colloidal nanocrystals solar cells based on colloidal PbS and PbSe nanocrystals. This journal is © The Royal Society of Chemistry 2012

  16. Spin Dynamics and Optical Nonlinearities in Layered GaSe and Colloidal CdSe Nanocrystal Quantum Dots

    NASA Astrophysics Data System (ADS)

    Tang, Yanhao

    In this thesis, we studied spin dynamics, optical nonlinearity and the optical Stark effect in bulk GaSe, mono- and few-layer GaSe, and colloidal CdSe nanocrystal quantum dots (NQDs), respectively. Control of the spin has been a long-term goal due to its potential applications in quantum information processing. Candidates for spintronics should have a long spin lifetime and allow for generation of a high initial spin polarization. GaSe caught our attention due to its orbitally nondegenerate valence bands, which are in contrast to the degenerate heavy and light hole valence bands in conventional III-V and II-VI semiconductors, like GaAs and CdSe. With time- and polarization-resolved photoluminescence, we demonstrated the generation of initial spin polarization as high as 0.9 followed by bi-exponential spin relaxation at 10 K (˜30 ps and ≥300 ps), owing to such orbitally nondegenerate valence bands in GaSe. We also directly revealed the initial spin and population relaxation as transitions from triplet excitons to singlet excitions via spin-flip of the electron or hole. Contrary to semiconductor transition metal dichalcogenides, MX2 (M=Mo,W; X=S,Se,Te), GaSe is a direct band gap semiconductor in bulk, but transforms to an indirect band gap semiconductor in a monolayer as the maximum of the valence band is shifted away from the Gamma point. Associated with such a valence band in monolayer GaSe, ferromagnetism has been predicted upon hole doping due to a strong electronic exchange field. To study the electronic structure of GaSe in mono- and few-layer GaSe, we measured layer- and frequency-dependent second-harmonic generation (SHG) in GaSe from monolayer to ≥100 layers and determined a second-order optical nonlinearity chi(2) in the multi-slab system. We found reduced a chi(2) in GaSe with thickness < 7 layers, tentatively attributed to the predicted increase in the band gap. How quantum confinement affects the light-matter interaction in colloidal Cd

  17. Synthesis of Colloidal Nanocrystal Heterostructures for High-Efficiency Light Emission

    NASA Astrophysics Data System (ADS)

    Lu, Yifei

    Group II-VI semiconductor nanocrystals, particularly those based on ZnCdS(Se), can be synthesized using well established chemical colloidal processes, and have been a subject of extensive research over the past decade. Their optical properties can be easily tuned through size and composition variations, making them very attractive for many optoelectronic applications including light-emitting diodes (LEDs) and solar cells. Incorporation of diverse internal heterostructures provides an additional means for tuning the optical and electronic properties of conventional ZnCdS(Se) nanocrystals. Extensive bandgap and strain engineering may be applied to the resultant nanocrystal heterostructures to achieve desirable properties and enhanced performance. Despite the high scientific and practical interests of this unique class of nanomaterials, limited efforts have been made to explore their synthesis and potential device applications. This thesis focuses on the synthesis, engineering, characterization, and device demonstration of two types of CdSe-based nanocrystal heterostructures: core/multishell quantum dots (QDs) and QD quantum wells (QDQWs). Their optical properties have been tuned by bandgap and strain engineering to achieve efficient photoluminescence (PL) and electroluminescence (EL).Firstly, yellow light-emitting CdSe QDs with a strain-compensated ZnS/ZnCdS bilayer shell were synthesized using the successive ion layer adsorption and reaction technique and the effects of the shell on the luminescent properties were investigated. The core/shell/shell QDs enjoyed the benefits of excellent exciton confinement by the ZnS intermediate shell and strain compensation by the ZnCdS outer shell, and exhibited 40% stronger PL and a smaller peak redshift upon shell growth compared to conventional CdSe/ZnCdS/ZnS core/shell/shell QDs with an intermediate lattice adaptor. CdSe/ZnS/ZnCdS QD-LEDs had a luminance of 558 cd/m2 at 20 mA/cm 2, 28% higher than that of CdSe/ZnCdS/ZnS QD

  18. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGES

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  19. Multilayers of zinc-blende half-metals with semiconductors

    NASA Astrophysics Data System (ADS)

    Mavropoulos, Ph; Galanakis, I.; Dederichs, P. H.

    2004-06-01

    We report on first-principles calculations for multilayers of zinc-blende half-metallic ferromagnets CrAs and CrSb with III-V and II-VI semiconductors, in the [001] orientation. We examine the ideal and tetragonalized structures, as well as the case of an intermixed interface. We find that, as a rule, half-metallicity can be conserved throughout the heterostructures, provided that the character of the local coordination and bonding is not disturbed. We describe a mechanism operative at the interfaces with semiconductors that can also give a non-integer spin moment per interface transition atom, and derive a simple rule for evaluating it.

  20. Spectral sensitivity of p-Cu{sub 1.8}S/n{sup -}-ZnS/n-(II-VI) heterostructures

    SciTech Connect

    Komaschenko, V. N. Kolezhuk, K. V.; Yaroshenko, N. V.; Sheremetova, G. I.; Bobrenko, Yu. N.

    2006-03-15

    Photosensitivity of multilayered p-Cu{sub 1.8}S/n{sup -}-(II-VI)/n-(II-VI) heterostructures beyond the fundamental-absorption edge of the wide-gap component is studied experimentally, and a simple model is suggested as an explanation of this photosensitivity. It is established that an effective method for reducing the photosensitivity of the structures beyond the ultraviolet spectral region consists in decreasing the probability of dominant tunneling processes, by increasing the thickness of the wide-gap layer, giving rise to a blocking barrier for photogenerated minority charge carriers. It is shown that the p-Cu{sub 1.8}S/n{sup -}-ZnS/n-CdSe heterostructures are promising for the development of efficient 'solar-blind' detectors of ultraviolet radiation.

  1. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2010-06-22

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  2. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2007-08-28

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  3. Patterning nanocrystals using DNA

    SciTech Connect

    Williams, Shara Carol

    2003-01-01

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made.[1] Here, we have sought to assemble larger and more complex nanostructures. Gold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure [2][3] that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA ''trimer.'' This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices to a length greater than

  4. Self-assembly of lead chalcogenide nanocrystals.

    PubMed

    Quan, Zewei; Valentin-Bromberg, Loriana; Loc, Welley Siu; Fang, Jiye

    2011-05-02

    This review focuses on recent developments in the self-assembly of lead chalcogenide nanocrystals into two- and three-dimensional superstructures. Self-assembly is categorized by the shapes of building blocks, including nanospheres, nanocubes, nano-octahedra, and nanostars. In the section on nanospheres, rapid assemblies of lead chalcogenide-based multicomponent nanocrystals with additional components, such as semiconductors, noble metals, and magnetic nanocrystals, are further highlighted. In situ self-assembly of lead chalcogenide nanocrystals into one-dimensional nanostructures at elevated temperatures is also covered. Each section of this paper highlights examples extracted from recent publications. Finally, relatively novel properties and applications arising from lead chalcogenide superlattices as typical examples are also discussed.

  5. Pyrite Nanocrystal Solar Cells: Promising, or Fool's Gold?

    PubMed

    Steinhagen, Chet; Harvey, Taylor B; Stolle, C Jackson; Harris, Justin; Korgel, Brian A

    2012-09-06

    Pyrite-phase iron sulfide (FeS2) nanocrystals were synthesized to form solvent-based dispersions, or "solar paint," to fabricate photovoltaic devices (PVs). Nanocrystals were sprayed onto substrates as absorber layers in devices with several different architectures, including Schottky barrier, heterojunction, and organic/inorganic hybrid architectures, to explore their viability as a PV material. None of the devices exhibited PV response. XRD and Raman spectroscopy confirmed the pyrite composition and phase purity of the nanocrystals. The electrical conductivity of the nanocrystal films was about 4 to 5 S/cm, more typical of metal nanocrystal films than semiconductor nanocrystal films, and the lack of PV response appears to derive from the highly conductive surface-related defects in pyrite that have been proposed.

  6. Colloidal inorganic nanocrystals: Nucleation, growth and biological applications

    NASA Astrophysics Data System (ADS)

    Lynch, Jared James

    Colloidal inorganic nanocrystals are a class of material whose size ranges from a few nanometers to a hundred nanometers in dimension. These nanocrystals have size dependent properties that differ significantly from the bulk material counterparts. Due to their unique physical properties colloidal inorganic nanocrystals have several promising applications in a diverse range of areas, such as biomedical diagnosis, catalysis, plasmonics, high-density data storage and solar energy conversion. This dissertation presents the study of the formation of iron oxide nanocrystals under the influence of solvent and Ar gas bubbles, the phase transfer of metal oxide nanocrystals into water using inorganic ions, and the doping of semiconductor CdS/ZnS core/shell nanocrystals with copper and silver ions. First, the formation of iron oxide nanocrystals is investigated in the presence of boiling solvent or Ar bubbles. Using a non-injection based synthesis method, the thermal decomposition of iron oleate was studied under various reaction conditions, and the role of the bubbles on the nucleation and growth of iron oxide nanocrystals was determined. Kinetics studies were used to elucidate how latent heat transfer from the bubbles allows for "active monomers" to form preferentially from exothermic reactions taking place during nucleation. General insights into colloidal inorganic nanocrystal formation are discussed. Second, a non-injection based synthesis for CdS/ZnS core/shell nanocrystals is used to make high quality semiconductor particles which are intentionally doped with Cu or Ag ions. The Ag ions effect on the optical properties of the CdS/ZnS nanocrystals is investigated. The absorption and fluorescence of the samples is measured as a function of time and temperature. Proposed mechanisms for the observations are given and thoroughly discussed. Comparisons between previous results for Cu doped CdS/ZnS nanocrystals are also made to further understand how doping of semiconductor

  7. Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

    SciTech Connect

    Hughes, Steven Michael

    2007-01-01

    The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

  8. Synthesis and investigation of optical properties of TOPO-capped CuInS{sub 2} semiconductor nanocrystal in the presence of different solvent

    SciTech Connect

    Asgary, Saeid; Mirabbaszadeh, Kavoos; Nayebi, Payman; Emadi, Hamid

    2014-03-01

    Graphical abstract: - Highlights: • TOPO-capped CuInS{sub 2} nanoparticles were synthesized by injection method. • Pure CuInS{sub 2} nanoparticle was obtained by injection in 200 °C. • The size, shape and optical properties of products were controlled. • Nanoparticles with size smaller than 10 nm and wurtzite phase was obtained. • The absorption and PL spectra of CuInS{sub 2} nanoparticles were tunable. - Abstract: In this work, synthesis of CuInS{sub 2} semiconductor nanoparticles by thermolysis of a mixed solution of CuAc, In(Ac){sub 3} and DDT in coordinating solvent and trioctylphosphine oxide (TOPO) as ligand was developed. CuInS{sub 2} nanoparticles with size of −10 nm and nanorods were obtained and optical properties controlled by adjusting the reaction parameters such as temperature and time. Also the shape of nanoparticles was controlled by various solvents elaborately. The as-prepared nanoparticles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM), UV–vis absorption, and photoluminescence (PL) spectroscopy. With the use of different solvent different morphology obtained. In the presence of oleylamine/octadecene rectangle-like nanorods obtained while with the use of oleic acid sphere-like nanoparticles achieved.

  9. Bi-photon imaging and diagnostics using ultra-small diagnostic probes engineered from semiconductor nanocrystals and single-domain antibodies

    NASA Astrophysics Data System (ADS)

    Hafian, Hilal; Sukhanova, Alyona; Chames, Patrick; Baty, Daniel; Pluot, Michel; Cohen, Jacques H. M.; Nabiev, Igor R.; Millot, Jean-Marc

    2012-10-01

    Semiconductor fluorescent quantum dots (QDs) have just demonstrated their numerous advantages over organic dyes in bioimaging and diagnostics. One of characteristics of QDs is a very large cross section of their twophoton absorption. A common approach to biodetection by means of QDs is to use monoclonal antibodies (mAbs) for targeting. Recently, we have engineered ultrasmall diagnostic nanoprobes (sdAb-QD) based on highly oriented conjugates of QDs with the single-domain antibodies (sdAbs) against cancer biomarkers. With a molecular weight of only 13 kDa (12-fold smaller than full-size mAbs) and extreme stability and capacity to refolding, sdAbs are the smallest functional Ab fragments capable of binding antigens with affinities comparable to those of conventional Abs. Ultrasmall diagnostic sdAb-QD nanoprobes were engineered through oriented conjugation of QDs with sdAbs. This study is the first to demonstrate the possibility of immunohistochemical imaging of colon carcinoma biomarkers with sdAb-QD conjugates by means of two-photon excitation. The optimal excitation conditions for imaging of the markers in clinical samples with sdAb-QD nanoprobes have been determined. The absence of sample autofluorescence significantly improves the sensitivity of biomarker detection with the use of the two-photon excitation diagnostic setup.

  10. Lead sulphide nanocrystal photodetector technologies

    NASA Astrophysics Data System (ADS)

    Saran, Rinku; Curry, Richard J.

    2016-02-01

    Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

  11. Chemistry of sustainability-Part I: Carbon dioxide as an organic synthon and Part II: Study of thermodynamics of cation exchange reactions in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sathe, Ajay A.

    chapter introduces the role of nanomaterials in sustainable solar energy conversion and storage. The use of cation exchange reactions in nanocrystals to access novel materials is highlighted. Despite having shown tremendous promise in the synthetic applications, the fundamental measurements of the thermodynamic and kinetic parameters of a cation exchange reaction are largely non-existent. This impedes the future growth of this powerful methodology. The technique of isothermal titration calorimetry is introduced, and its importance to studying the thermochemical changes occurring during cation exchange is outlined. The final chapter presents results obtained from the isothermal titration calorimetry on the prototypical cation exchange reaction between cadmium selenide and silver ions. The role of nanoparticle size, identity of the silver salt, solvent, surface ligands and temperature is studied. Recommendations for future investigations using ITC as well as other characterization techniques for discerning the kinetics of cation exchange are presented. I believe that a more unified mechanistic understanding of the cation exchange process in nanomaterials will aid the development of more efficient and robust materials for applications in a wide variety of fields.

  12. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  13. Ultra-large-scale syntheses of monodisperse nanocrystals

    NASA Astrophysics Data System (ADS)

    Park, Jongnam; An, Kwangjin; Hwang, Yosun; Park, Je-Geun; Noh, Han-Jin; Kim, Jae-Young; Park, Jae-Hoon; Hwang, Nong-Moon; Hyeon, Taeghwan

    2004-12-01

    The development of nanocrystals has been intensively pursued, not only for their fundamental scientific interest, but also for many technological applications. The synthesis of monodisperse nanocrystals (size variation <5%) is of key importance, because the properties of these nanocrystals depend strongly on their dimensions. For example, the colour sharpness of semiconductor nanocrystal-based optical devices is strongly dependent on the uniformity of the nanocrystals, and monodisperse magnetic nanocrystals are critical for the next-generation multi-terabit magnetic storage media. For these monodisperse nanocrystals to be used, an economical mass-production method needs to be developed. Unfortunately, however, in most syntheses reported so far, only sub-gram quantities of monodisperse nanocrystals were produced. Uniform-sized nanocrystals of CdSe (refs 10,11) and Au (refs 12,13) have been produced using colloidal chemical synthetic procedures. In addition, monodisperse magnetic nanocrystals such as Fe (refs 14,15), Co (refs 16-18), γ-Fe2O3 (refs 19,20), and Fe3O4 (refs 21,22) have been synthesized by using various synthetic methods. Here, we report on the ultra-large-scale synthesis of monodisperse nanocrystals using inexpensive and non-toxic metal salts as reactants. We were able to synthesize as much as 40 g of monodisperse nanocrystals in a single reaction, without a size-sorting process. Moreover, the particle size could be controlled simply by varying the experimental conditions. The current synthetic procedure is very general and nanocrystals of many transition metal oxides were successfully synthesized using a very similar procedure.

  14. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  15. Power Scaling Feasibility or Chromium-Doped II-VI Laser Sources and the Demonstration of a Chromium-Doped Zinc Selenide Face-Cooled Disk Laser

    DTIC Science & Technology

    2002-03-01

    demonstrated, producing 4-ps pulses[6, 7]. Diode pumping has been shown to be possible using diode lasers in the 1.5- 1.8 µm range[8, 9]. Thus, chromium...power. Efficient diode laser pumping of Cr2+:II-VI materials at the 10-20 W power level is not yet possible, because the 5-8 µs excited state...lifetime of Cr2+ requires pumping intensities of at least 2-3 kW/cm2 for efficient laser operation, higher than what existing high power diode lasers can

  16. Chemistry related to semiconductor growth involving organometallics

    NASA Astrophysics Data System (ADS)

    Husk, G. R.; Jones, K. A.; Paur, R. J.; Prater, J. T.

    1990-05-01

    OMVPE (OrganoMetallic Vapor-Phase Epitaxy) technology requirements for III-V compounds and chemistry related to semiconductor growth involving organometallics are discussed. The following subject areas are covered: semiconductor device requirements; Army II-VI deposition program/MOMBE (Metal Organic Molecular Beam Epitaxy) for IR detector applications; epitaxial growth of III-V's and II-VI's using organometallics; electrical device requirements; environmental and safety issues in MOVPE; quantum chemistry of vapor phase; carbon doping and selective epitaxy (tailoring growth chemistry in MOVPE); TBA/TBP precursors in GaAs and InP MOCVD; single source precursors for III-V OMCVD (OrganoMetallic Chemical Vapor Deposition) growth; alternate sources for MOMBE of AlGaAs; mechanism of incorporation of impurities and analysis of carbon contamination; growth on nonplanar and patterned substrates; CBE growth mechanisms; TriMethylamine Alane (a new robust precursor for MOMBE growth of AlGaAs); real-time determinations of OMCVD growth kinetics on GaAs by reflectance-difference spectroscopy; photoreflectance measurements; growth and doping mechanisms for HgCdTe; photoassisted CBE (Chemical Beam Epitaxy) of CdTe and HgCdTe alloys; in-situ analysis of ZnSe growth by OMCVD using X-ray scattering; biodegradation of GaAs IC chips and wafers; detailed models of compound semiconductor growth by MOCVD; gas phase probes of GaAs cluster chemistry; photodecomposition of organometallic compounds at 193 nm; manufacturing issues in MOCVD compound semiconductor technology.

  17. Plasmonic engineering of spontaneous emission from silicon nanocrystals

    PubMed Central

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells. PMID:24037020

  18. Generalized and facile synthesis of semiconducting metal sulfide nanocrystals.

    PubMed

    Joo, Jin; Na, Hyon Bin; Yu, Taekyung; Yu, Jung Ho; Kim, Young Woon; Wu, Fanxin; Zhang, Jin Z; Hyeon, Taeghwan

    2003-09-10

    We report on the synthesis of semiconductor nanocrystals of PbS, ZnS, CdS, and MnS through a facile and inexpensive synthetic process. Metal-oleylamine complexes, which were obtained from the reaction of metal chloride and oleylamine, were mixed with sulfur. The reaction mixture was heated under appropriate experimental conditions to produce metal sulfide nanocrystals. Uniform cube-shaped PbS nanocrystals with particle sizes of 6, 8, 9, and 13 nm were synthesized. The particle size was controlled by changing the relative amount of PbCl(2) and sulfur. Uniform 11 nm sized spherical ZnS nanocrystals were synthesized from the reaction of zinc chloride and sulfur, followed by one cycle of size-selective precipitation. CdS nanocrystals that consist of rods, bipods, and tripods were synthesized from a reaction mixture containing a 1:6 molar ratio of cadmium to sulfur. Spherical CdS nanocrystals (5.1 nm sized) were obtained from a reaction mixture with a cadmium to sulfur molar ratio of 2:1. MnS nanocrystals with various sizes and shapes were synthesized from the reaction of MnCl(2) and sulfur in oleylamine. Rod-shaped MnS nanocrystals with an average size of 20 nm (thickness) x 37 nm (length) were synthesized from a 1:1 molar ratio of MnCl(2) and sulfur at 240 degrees C. Novel bullet-shaped MnS nanocrystals with an average size of 17 nm (thickness) x 44 nm (length) were synthesized from the reaction of 4 mmol of MnCl(2) and 2 mmol of sulfur at 280 degrees C for 2 h. Shorter bullet-shaped MnS nanocrystals were synthesized from a 3:1 molar ratio of MnCl(2) and sulfur. Hexagon-shaped MnS nanocrystals were also obtained. All of the synthesized nanocrystals were highly crystalline.

  19. Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

    NASA Astrophysics Data System (ADS)

    Lee, Jong Jin; Harada, Yoshinao; Pyun, Jung Woo; Kwong, Dim-Lee

    2005-03-01

    This letter presents the formation of nickel nanocrystal on HfO2 high-k dielectric and its application to the nonvolatile memory devices. The effects of the initial nickel layer thickness and annealing temperature on nickel nanocrystal formation are investigated. The n-metal-oxide-semiconductor field-effect transistor with nickel nanocrystals and HfO2 tunneling dielectrics is fabricated and its programming, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

  20. Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II-VI and III-V MWIR Detector Technologies for Space Applications

    NASA Astrophysics Data System (ADS)

    Jenkins, Geoffrey D.; Morath, Christian P.; Cowan, Vincent M.

    2017-09-01

    The degradation of the minority-carrier recombination lifetime of various III-V nB n and II-VI HgCdTe midwave-infrared space detector materials under stepwise 63-MeV proton irradiation up to fluence of 7.5 × 1011 cm-2 and above has been measured using time-resolved photoluminescence while samples were held at 120 K to limit thermal annealing. As expected, the recombination rate of each sample was found to increase with proton fluence at a nearly constant rate, implying a near-linear increase in defect concentration. The rate of change of the carrier recombination rate, herein called the minority-carrier lifetime damage factor, was then plotted as a function of the initial recombination rate for each sample. Juxtaposing the III-V and II-VI results revealed a distinct disparity, with the incumbent detector material HgCdTe being roughly an order of magnitude more radiation tolerant to displacement damage from proton irradiation than any of the nB n materials. The results for the latter also suggest some degree of interrelation between the damage factor and initial lifetime. The behavior of the lifetime of each material under annealing revealed that HgCdTe exhibited nearly 100% recovery at 295 K whereas III-V materials recovered to only about 50% under the same conditions.

  1. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  2. Vacancy formation and extraction energies in semiconductor compounds and alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.

    1990-01-01

    A model for calculating the extraction energies and vacancy-formation energies in diamond-cubic and zinc-blende semiconductors is developed on the basis of Harrison's (1980, 1983) tight-binding theory. The extraction energies provide a reference from which other final states of the removed atoms can be calculated. The results of calculations show that, in a given compound, the calculated extraction energies are larger for the anion than for the cation, with the difference between the cation and the anion being larger in the II-VI than in the III-V compounds. This is in agreement with experimental results.

  3. Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Konak, Tetyana; Tekavec, Michael; Fedorov, Vladimir V.; Mirov, Sergey B.

    2011-02-01

    We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.

  4. Fabrication and characterization of CdS thin films: Study of the adhesion of II-VI compound semiconductors for applications to light emitting and absorbing devices

    SciTech Connect

    Kang, H.S.; Cho, G.E.; Kim, K.W.; Persans, P.D.

    1996-12-31

    The structural and optoelectronic properties of polycrystalline CdS films, fabricated by three different methods, are compared to one another for the purpose of preparing CdTe/CdS solar cells. The three methods were: alternated spraying of cation and anion solution at room temperature, spray pyrolysis, and chemical bath deposition. The authors studied the surface morphology and crystal quality and texture by scanning electron and optical microscopy and x-ray diffraction. All films had a well-developed wurtzite structure. Films grown by the alternated-spray method and the chemical bath method consist of randomly-oriented crystallites with dimensions < 0.5 microns. Annealing at 400 C increases the crystallite size slightly. Films which were grown by pyrolysis at substrate temperatures from 400 C to 500 C were oriented in the <002> direction. For growth by pyrolysis at 500 C, the surface is rough on a lateral scale of 0.1 to 0.3 microns.

  5. Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures. Materials Research Society Symposium Proceedings. Volume 163

    DTIC Science & Technology

    1990-11-21

    Selective Area Deposition and Etching (161) Properties of II-VI Semiconductors: Bulk Crystals, Expitaxial Films, Quantum Well Structures, and Dilute...Pfeiffer, H. Skudlik, and D. Steiner STRAIN INDUCED INTRINSIC QUANTUM WELLS AS THE ORIGIN OF BROAD BAND PHOTOLUMINESCENCE IN SILICON CONTAINING EXTENDED...FREE TO BOUND TRANSITIONS IN Ga xAlX As/GaAs QUANTUM WELLS 313 Donald C. Reynolds and K.K. Bajaj DECAY MEASUREMENTS OF FREE AND BOUND EXCITON RECOM

  6. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

    PubMed

    Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

    2013-03-26

    We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

  7. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  8. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  9. Fully Ordered and Nano-Structured Inorganic-Organic Hybrid Semiconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Huang, X.-Y.

    2005-03-01

    A family of novel inorganic-organic hybrid nanostructures based on II-VI semiconductors has been synthesized, including the first monolayer inorganic/organic superlattices with all covelent bonds (3D structures) and the smallest quantum wires (1D), the chains being formed of single II-VI atomic bonds [1]. These materials are atomistically reassembled crystals without the structural fluctuation typically found in other nanostrutures, and exhibit a number of remarkable properties (e.g., a giant bandgap tunability of 1-2 eV [1,2]). As a prototype system, a 3D structure β-ZnTe(en)0.5 shows a strongly enhanced free exciton absorption (a few times of that in the II-VI binary), Raman lines as sharp as any binary semiconductor, band edge free exciton emission, and more than 10 times enhancement in the exciton binding energy. First-principles density function band structure calculations have been performed to obtain the band gap shift, dispersion relations (effective masses), and dielectric constants of the hybrid material, and the relevant band offsets. [1] X.-Y. Huang, J. Li, Y. Zhang, and A. Mascarenahs, JACS 125, 7049 (2003). [2] B. Fluegel, Y. Zhang, A. Mascarenahs, X.-Y. Huang, and J. Li, PRB 70, 205308 (2004).

  10. Growth of platinum nanocrystals

    SciTech Connect

    2009-01-01

    Movie showing the growth of platinum nanocrystals in a liquid cell observed in situ using the JEOL 3010 TEM at the National Center for Electron Microscopy. This is the first ever-real time movie showing nucleation and growth by monomer attachment or by smaller nanocrystals coalescing to form larger nanocrystals. All the nanocrystals end up being roughly the same shape and size. http://newscenter.lbl.gov/feature-stories/2009/08/04/growth-spurts/

  11. Colloidal Nanocrystals Fluoresced by Surface Coordination Complexes

    PubMed Central

    Wang, Guan; Ji, Jianwei; Zhang, Xinwen; Zhang, Yan; Wang, Qiangbin; You, Xiaozeng; Xu, Xiangxing

    2014-01-01

    Colloidal Nanocrystals (NCs) with fluorescence originating from surface complexes are successfully prepared. The components of these NCs range from insulator, semiconductor to metal, with either pure phase, doped or core/shell structures. The photoluminescence of these NCs can be reversibly tuned across the visible to infrared spectrum, and even allow multi-color emission. A light emitting device is fabricated and a new in vivo cell imaging method is performed to demonstrate the power of this technology for emerging applications. PMID:24970242

  12. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

  13. Colloidal synthesis of biocompatible iron disulphide nanocrystals.

    PubMed

    Santos-Cruz, J; Nuñez-Anita, R E; Mayén-Hernández, S A; Martínez-Alvarez, O; Acosta-Torres, L S; de la Fuente-Hernández, J; Campos-González, E; Vega-González, M; Arenas-Arrocena, M C

    2017-08-06

    The aim of this research was to synthesis biocompatible iron disulphide nanocrystals at different reaction temperatures using the colloidal synthesis methodology. Synthesis was conducted at the 220-240 °C range of reaction temperatures at intervals of 5 °C in an inert argon atmosphere. The toxicity of iron disulphide nanocrystals was evaluated in vitro using mouse fibroblast cell line. Two complementary assays were conducted: the first to evaluate cell viability of the fibroblast via an MTT assay and the second to determine the preservation of fibroblast nuclei integrity through DAPI staining, which labels nuclear DNA in fluorescence microscopes. Through TEM and HRTEM, we observed a cubic morphology of pyrite iron disulphide nanocrystals ranging in sizes 25-50 nm (225 °C), 50-70 nm (230 °C) and >70 nm (235 °C). Through X-ray diffraction, we observed a mixture of pyrite and pyrrohotite in the samples synthesized at 225 °C and 240 °C, showing the best photocatalytic activity at 80% and 65%, respectively, for the degradation of methylene blue after 120 minutes. In all experimental groups, iron disulphide nanocrystals were biocompatible, i.e. no statistically significant differences were observed between experimental groups as shown in a one-way ANOVA and Tukey's test. Based on all of these results, we recommend non-cytotoxic semiconductor iron sulphide nanocrystals for biomedical applications.

  14. Fabrication and electronic transport studies of single nanocrystal systems

    SciTech Connect

    Klein, David Louis

    1997-05-01

    Semiconductor and metallic nanocrystals exhibit interesting electronic transport behavior as a result of electrostatic and quantum mechanical confinement effects. These effects can be studied to learn about the nature of electronic states in these systems. This thesis describes several techniques for the electronic study of nanocrystals. The primary focus is the development of novel methods to attach leads to prefabricated nanocrystals. This is because, while nanocrystals can be readily synthesized from a variety of materials with excellent size control, means to make electrical contact to these nanocrystals are limited. The first approach that will be described uses scanning probe microscopy to first image and then electrically probe surfaces. It is found that electronic investigations of nanocrystals by this technique are complicated by tip-sample interactions and environmental factors such as salvation and capillary forces. Next, an atomic force microscope technique for the catalytic patterning of the surface of a self assembled monolayer is described. In principle, this nano-fabrication technique can be used to create electronic devices which are based upon complex arrangements of nanocrystals. Finally, the fabrication and electrical characterization of a nanocrystal-based single electron transistor is presented. This device is fabricated using a hybrid scheme which combines electron beam lithography and wet chemistry to bind single nanocrystals in tunneling contact between closely spaced metallic leads. In these devices, both Au and CdSe nanocrystals show Coulomb blockade effects with characteristic energies of several tens of meV. Additional structure is seen the transport behavior of CdSe nanocrystals as a result of its electronic structure.

  15. Ab initio electronic band structure study of the valence bands of II-VI C(2 × 2) reconstructed surfaces

    NASA Astrophysics Data System (ADS)

    Rubio-Ponce, A.; Olguín, D.

    2015-01-01

    The structural and electronic properties of CdTe(001), CdSe(001), and ZnSe(001) C(2 x 2) reconstructed surfaces have been investigated through the use of first-principles calculations. To simulate the surface, we employed the slab model. Using the experimentally determined lattice parameters as inputs, we relaxed the internal atomic positions of the outer atomic layers. We demonstrate that our model appropriately reproduces both the surface structural parameters and the known electronic properties found for these semiconductor compounds in bulk. Finally, we discuss our results of the projected bulk bands and the surface and resonance states found for these surfaces.

  16. Synthesis of new nanocrystal materials

    NASA Astrophysics Data System (ADS)

    Hassan, Yasser Hassan Abd El-Fattah

    Colloidal semiconductor nanocrystals (NCs) have sparked great excitement in the scientific community in last two decades. NCs are useful for both fundamental research and technical applications in various fields owing to their size and shape-dependent properties and their potentially inexpensive and excellent chemical processability. These NCs are versatile fluorescence probes with unique optical properties, including tunable luminescence, high extinction coefficient, broad absorption with narrow photoluminescence, and photobleaching resistance. In the past few years, a lot of attention has been given to nanotechnology based on using these materials as building blocks to design light harvesting assemblies. For instant, the pioneering applications of NCs are light-emitting diodes, lasers, and photovoltaic devices. Synthesis of the colloidal stable semiconductor NCs using the wet method of the pyrolysis of organometallic and chalcogenide precursors, known as hot-injection approach, is the chart-topping preparation method in term of high quality and monodisperse sized NCs. The advancement in the synthesis of these artificial materials is the core step toward their applications in a broad range of technologies. This dissertation focuses on exploring various innovative and novel synthetic methods of different types of colloidal nanocrystals, both inorganic semiconductors NCs, also known as quantum dots (QDs), and organic-inorganic metal halide-perovskite materials, known as perovskites. The work presented in this thesis focuses on pursuing fundamental understanding of the synthesis, material properties, photophysics, and spectroscopy of these nanostructured semiconductor materials. This thesis contains 6 chapters and conclusions. Chapters 1?3 focus on introducing theories and background of the materials being synthesized in the thesis. Chapter 4 demonstrates our synthesis of colloidal linker--free TiO2/CdSe NRs heterostructures with CdSe QDs grown in the presence of Ti

  17. Cadmium selenide semiconductor nanocrystals: a theoretical study

    NASA Astrophysics Data System (ADS)

    Eichkorn, Karin; Ahlrichs, Reinhart

    1998-05-01

    We consider a series of known ligand-stabilized clusters of CdSe and compute structure, electronic excitations and electron affinities with a density functional theory approach. The trend of computed properties on cluster size and especially the results for the largest cluster treated, [Cd 32Se 14(SeR) 36(PR 3) 4], R=H, display the effects encountered in the transition from molecular clusters to the solid state. We propose structural principles for ligand-stabilized CdSe clusters.

  18. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

    1998-01-01

    Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

  19. Surface chemical modification of nanocrystals

    DOEpatents

    Helms, Brett Anthony; Milliron, Delia Jane; Rosen, Evelyn Louise; Buonsanti, Raffaella; Llordes, Anna

    2017-03-14

    Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces.

  20. Low temperature thin films formed from nanocrystal precursors

    DOEpatents

    Alivisatos, A.P.; Goldstein, A.N.

    1993-11-16

    Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.

  1. Low temperature thin films formed from nanocrystal precursors

    DOEpatents

    Alivisatos, A. Paul; Goldstein, Avery N.

    1993-01-01

    Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.

  2. Shell effect on the electron and hole reorganization energy of core-shell II-VI nanoclusters

    NASA Astrophysics Data System (ADS)

    Cui, Xianhui; Wang, Xinqin; Yang, Fang; Cui, Yingqi; Yang, Mingli

    2017-09-01

    Density functional theory calculations were performed to study the effect of shell encapsulation on the geometrical and electronic properties of pure and hybrid core-shell CdSe nanoclusters. The CdSe cores are distorted by the shells, and the shells exhibit distinct surface activity from the cores, which leads to remarkable changes in their electron transition behaviors. Although the electron and hole reorganization energies, which are related to the formation and recombination of electron-hole pairs, vary in a complicated way, their itemized contributions, potentials of electron extraction, ionization and affinity, and hole extraction (HEP), are dependent on the cluster size, shell composition and/or solvent. Our calculations suggest that the behaviors of charge carriers, free electrons and holes, in the semiconductor core-shell nanoclusters can be modulated by selecting appropriate cluster size and controlling the chemical composition of the shells.

  3. Electron states in semiconductor quantum dots

    SciTech Connect

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  4. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  5. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  6. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  7. Highly Emissive Transition Metal Ion Doped Semiconducting Nanocrystals

    NASA Astrophysics Data System (ADS)

    Jana, Santanu; Srivastava, Bhupendra B.; Sarma, D. D.; Pradhan, Narayan

    2011-07-01

    Doped semiconductor nanocrystals (d-dots), specifically ones not containing heavy metal ions, have the potential to become a class of mainstream emissive materials. Mn- and Cu-doped ZnSe or ZnS d-dots can cover an emission window similar to that of the current workhorse of intrinsic quantum dot (q-dots) emitters, CdSe nanocrystals. We synthesized high quality stable Cu doped ZnSe in nonpolar as well as polar solvent. The emission intensity of these doped nanocrystals is found stable for months under UV irradiation, after different multifunctional ligand which is important for any biological detection. We have also synthesized the stable Mn doped ZnS in nonpolar solvent more than 50% QY.. The doped nanocrystals are characterized by TEM, XRD, EPR and ICP analysis.

  8. Mn-Doped Multinary CIZS and AIZS Nanocrystals.

    PubMed

    Manna, Goutam; Jana, Santanu; Bose, Riya; Pradhan, Narayan

    2012-09-20

    Multinary nanocrystals (CuInS2, CIS, and AgInS2, AIS) are widely known for their strong defect state emission. On alloying with Zn (CIZS and AIZS), stable and intense emission tunable in visible and NIR windows has already been achieved. In these nanocrystals, the photogenerated hole efficiently moves to the defect-induced state and recombines with the electron in the conduction band. As a result, the defect state emission is predominantly observed without any band edge excitonic emission. Herein, we report the doping of the transition-metal ion Mn in these nanocrystals, which in certain compositions of the host nanocrystals quenches this strong defect state emission and predominantly shows the spin-flip Mn emission. Though several Mn-doped semiconductor nanocrystals are reported in the literature, these nanocrystals are of its first kind that can be excited in the visible window, do not contain the toxic element Cd, and provide efficient emission. Hence, when Mn emission is required, these multinary nanocrystals can be the ideal versatile materials for widespread technological applications.

  9. Detection of toxic mercury ions using a ratiometric CdSe/ZnS nanocrystal sensor.

    PubMed

    Page, Leah E; Zhang, Xi; Jawaid, Ali M; Snee, Preston T

    2011-07-21

    We have developed a strategy for the ratiometric detection of toxic Hg(2+) ions using a semiconductor nanocrystal energy-transfer donor coupled to a mercury-sensitive "turn-on" dye acceptor. The results demonstrate a new paradigm of toxic metal sensing that resolves the difficulties with the use of semiconductor nanotechnology for this purpose.

  10. Density functional theory based tight binding study on theoretical prediction of low-density nanoporous phases ZnO semiconductor materials

    NASA Astrophysics Data System (ADS)

    Tuoc, Vu Ngoc; Doan Huan, Tran; Viet Minh, Nguyen; Thi Thao, Nguyen

    2016-06-01

    Polymorphs or phases - different inorganic solids structures of the same composition usually have widely differing properties and applications, thereby synthesizing or predicting new classes of polymorphs for a certain compound is of great significance and has been gaining considerable interest. Herein, we perform a density functional theory based tight binding (DFTB) study on theoretical prediction of several new phases series of II-VI semiconductor material ZnO nanoporous phases from their bottom-up building blocks. Among these, three phases are reported for the first time, which could greatly expand the family of II- VI compound nanoporous phases. We also show that all these generally can be categorized similarly to the aluminosilicate zeolites inorganic open-framework materials. The hollow cage structure of the corresponding building block ZnkOk (k= 9, 12, 16) is well preserved in all of them, which leads to their low-density nanoporous and high flexibility. Additionally the electronic wide-energy gap of the individual ZnkOk is also retained. Our study reveals that they are all semiconductor materials with a large band gap. Further, this study is likely to be the common for II-VI semiconductor compounds and will be helpful for extending their range of properties and applications.

  11. Chelating ligands for nanocrystals' surface functionalization.

    PubMed

    Querner, Claudia; Reiss, Peter; Bleuse, Joël; Pron, Adam

    2004-09-22

    A new family of ligands for the surface functionalization of CdSe nanocrystals is proposed, namely alkyl or aryl derivatives of carbodithioic acids (R-C(S)SH). The main advantages of these new ligands are as follows: they nearly quantitatively exchange the initial surface ligands (TOPO) in very mild conditions; they significantly improve the resistance of nanocrystals against photooxidation because of their ability of strong chelate-type binding to metal atoms; their relatively simple preparation via Grignard intermediates facilitates the development of new bifunctional ligands containing, in addition to the anchoring carbodithioate group, a second function, which enables the grafting of molecules or macromolecules of interest on the nanocrystal surface. To give an example of this approach, we report, for the first time, the grafting of an electroactive oligomer from the polyaniline family-aniline tetramer-on CdSe nanocrystals after their functionalization with 4-formyldithiobenzoic acid. The grafting proceeds via a condensation reaction between the aldehyde group of the ligand and the terminal primary amine group of the tetramer. The resulting organic/inorganic hybrid exhibits complete extinction of the fluorescence of its constituents, indicating efficient charge or energy transfer between the organic and the inorganic semiconductors.

  12. The characterization of semiconductor materials by backscattering spectroscopy

    NASA Astrophysics Data System (ADS)

    Keenan, J. A.

    1985-05-01

    Backscattering spectroscopy has become established as a characterization tool for semiconductor materials because it offers insight into crystalline order, the masses of impurities, the depth distribution of impurities and disorder, the stoichiometry of compound layers, and the lattice position of impurities. Quantitative results are derived from fundamental physical principals and well known parameters such that 5% accuracy is attainable without standards. In the silicon matrix, metal suicides, complex metallization schemes, implanted layers, and processed surfaces are ideal subjects for characterization by backscattering. Measurement time is consistent with process development if data reduction and presentation can keep pace. This backscattering system has been designed to achieve high throughput using computerized methods for both data acquisition and reduction. The success with the silicon matrix arises from favorable kinematics of backscattering from heavy elements in a light matrix. Application to III-V or II-VI semiconductors requires novel methods in order to overcome the less favorable kinematics.

  13. Conjugated polymer/nanocrystal nanocomposites for renewable energy applications in photovoltaics and photocatalysis.

    PubMed

    Su, Yu-Wei; Lin, Wei-Hao; Hsu, Yung-Jung; Wei, Kung-Hwa

    2014-11-01

    Conjugated polymer/nanocrystal composites have attracted much attention for use in renewable energy applications because of their versatile and synergistic optical and electronic properties. Upon absorbing photons, charge separation occurs in the nanocrystals, generating electrons and holes for photocurrent flow or reduction/oxidation (redox) reactions under proper conditions. Incorporating these nanocrystals into conjugated polymers can complement the visible light absorption range of the polymers for photovoltaics applications or allow the polymers to sensitize or immobilize the nanocrystals for photocatalysis. Here, the current developments of conjugated polymer/nanocrystal nanocomposites for bulk heterojunction-type photovoltaics incorporating Cd- and Pb-based nanocrystals or quantum dots are reviewed. The effects of manipulating the organic ligands and the concentration of the nanocrystal precursor, critical factors that affect the shape and aggregation of the nanocrystals, are also discussed. In the conclusion, the mechanisms through which conjugated polymers can sensitize semiconductor nanocrystals (TiO2 , ZnO) to ensure efficient charge separation, as well as how they can support immobilized nanocrystals for use in photocatalysis, are addressed.

  14. Hot-injection synthesis of Ni-ZnO hybrid nanocrystals with tunable magnetic properties and enhanced photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Zeng, Deqian; Qiu, Yulong; Chen, Yuanzhi; Zhang, Qinfu; Liu, Xiang; Peng, Dong-Liang

    2017-04-01

    Magnetic metal-semiconductor hybrid nanocrystals containing ferromagnetic Ni and semiconductor ZnO have been prepared via a hot-injection route. The Ni-ZnO hybrid nanocrystals have a flower-like morphology that consists of Ni inner cores and ZnO petal shells. In spite of their large lattice mismatch, ZnO nanocrystals can still grow on faceted Ni nanocrystals to form stable interfaces. The composition of Ni-ZnO hybrid nanocrystals is readily controlled, and the average size of Ni core is tunable from 25 to 50 nm. Room temperature ferromagnetic properties are observed in these hybrid nanocrystals, and tunable magnetic properties also can be achieved by varying the size of Ni core. The as-prepared Ni-ZnO hybrid nanocrystals exhibit enhanced photocatalytic performance under ultraviolet light illumination as compared to pure ZnO nanocrystals. Furthermore, the superior reusability of hybrid nanocrystals for photocatalytic application is achieved by virtue of their magnetic properties. The facile and efficient seed-mediate strategy is particularly attractive to construct hybrid magnetic-semiconducting heterostructures. The as-obtained Ni-ZnO hybrid nanocrystals offer great potential for various applications due to their combined magnetic and semiconducting properties and low-cost earth-abundant availability.

  15. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  16. Biomineralization: Nanocrystals by design

    NASA Astrophysics Data System (ADS)

    Shang, Li; Nienhaus, Gerd Ulrich

    2015-10-01

    Nanocrystals with precisely defined structures offer promise as components of advanced materials yet they are challenging to create. Now, a nanocrystal made up of seven cadmium and twelve chloride ions has been synthesized via a biotemplating approach that uses a de novo designed protein.

  17. Functionalization of semiconductors for biosensing applications

    NASA Astrophysics Data System (ADS)

    Estephan, E.; Larroque, C.; Martineau, P.; Cloitre, T.; Gergely, Cs.

    2007-05-01

    Functionalization of semiconductors (SC) has been widely used for various electronic, photonic and biomedical applications. In this paper, we report on selective functionalization achieved by peptides that reveal specific recognition of the SC surfaces. A M13 bacteriophage library was used to screen 10 10 different 12-mer peptide on various SC substrates to successfully isolate after 3 cycles one specific peptide for the majority of semiconductors. Our results conclude that GaAs(100) and GaN(0001) retain the same sequence of 12-mer peptide, suggesting that the specificity does not depend on the crystallographic structure but it depends on the chemical composition and the electronegativity of the surface, thus on the orientation of the material. We also note the presence of at least one proline (Pro) amino acid in each peptide, and the presence of the histidine (His) in the specific peptides for the II-VI class SC. Pro imprints a constraint to the peptide to facilitate adhesion to the surface, whereas the basic side chain His is known for its affinity towards some of the elements of class II SC. Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide to their specific SC surface in close proximity to a surface of different chemical and structural composition. The use of selected peptides expressed by phage display can be extended to encompass a variety of nanostructured semiconductor based devices.

  18. Predictive simulations of semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Galli, Giulia

    2005-03-01

    Ab-initio simulations are playing an increasingly important role in understanding matter at the nanoscale and in predicting with controllable, quantitative accuracy the novel and complex properties of nanomaterials. A microscopic, fundamental understanding of nanoscale phenomena is very much in demand, as experimental investigations are sometimes controversial and usually they cannot be explained on the basis of simple models. In this talk, ab-initio molecular dynamics simulations and quantum monte carlo calculations of semiconductor nanoparticles will be presented, with focus on electronic and optical properties and on the microscopic structure of surfaces at the nanoscale. The characterization of nanoscale surfaces and interfaces is of paramount importance to predict the function of nanomaterials, and eventually their assembly into macroscopic solids, and it is still very challenging from an experimental standpoint, due to the lack of appropriate imaging techniques. The presentation will focus on Si, Ge, SiC nanoparticles and nanodiamond, and in addition we will discuss several results for II-VI dots and rods. (*) Work done in collaboration with G.Cicero, E.Draeger, J.Grossman, F.Gygi, D.Prendergast, A.Puzder, J.-Y.Raty, F.Reboredo, E.Schwegler, A.Williamson This work was performed under the auspices of the US Department of Energy by the University of California at the LLNL under contract no W-7405-Eng-48

  19. Silicon Nanocrystal Laser

    SciTech Connect

    Yu, J

    2005-03-09

    The purpose of this feasibility study project was to attempt to demonstrate the silicon-nanocrystal-based laser. Such a silicon laser (made using conventional silicon-manufacturing technologies) would provide the crucial missing link that would enable a completely-silicon-based photonic system. We prepared thin layers of silicon nanocrystal material by ion-implanting Si in fused silica substrates, followed by a high temperature anneal process. These Si nanocrystals produced intense photoluminescence when optically pumped with ultraviolet light. Laser structures based on Fabry-Perot cavity and distributed feedback (DFB) designs were fabricated using the Si nanocrystals as the ''lasing'' medium. We optically pumped the samples with CW lasers at 413nm wavelength to quickly assess the feasibility of making lasers out of the Nanocrystal Si material and to verify the gain coefficients reported by other research groups.

  20. Optical activity of chirally distorted nanocrystals

    NASA Astrophysics Data System (ADS)

    Tepliakov, Nikita V.; Baimuratov, Anvar S.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2016-05-01

    We develop a general theory of optical activity of semiconductor nanocrystals whose chirality is induced by a small perturbation of their otherwise achiral electronic subsystems. The optical activity is described using the quantum-mechanical expressions for the rotatory strengths and dissymmetry factors introduced by Rosenfeld. We show that the rotatory strengths of optically active transitions are decomposed on electric dipole and magnetic dipole contributions, which correspond to the electric dipole and magnetic dipole transitions between the unperturbed quantum states. Remarkably, while the two kinds of rotatory strengths are of the same order of magnitude, the corresponding dissymmetry factors can differ by a factor of 105. By maximizing the dissymmetry of magnetic dipole absorption one can significantly enhance the enantioselectivity in the interaction of semiconductor nanocrystals with circularly polarized light. This feature may advance chiral and analytical methods, which will benefit biophysics, chemistry, and pharmaceutical science. The developed theory is illustrated by an example of intraband transitions inside a semiconductor nanocuboid, whose rotatory strengths and dissymmetry factors are calculated analytically.