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Sample records for ii-vi semiconductor nanocrystals

  1. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  2. Photophysical Properties of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gong, Ke

    As it is well known, semiconductor nanocrystals (also called quantum dots, QDs) are being actively pursued for use in many different types of luminescent optical materials. These materials include the active media for luminescence downconversion in artificial lighting, lasers, luminescent solar concentrators and many other applications. Chapter 1 gives general introduction of QDs, which describe the basic physical properties and optical properties. Based on the experimental spectroscopic study, a semiquantitative method-effective mass model is employed to give theoretical prediction and guide. The following chapters will talks about several topics respectively. A predictive understanding of the radiative lifetimes is therefore a starting point for the understanding of the use of QDs for these applications. Absorption intensities and radiative lifetimes are fundamental properties of any luminescent material. Meantime, achievement of high efficiency with high working temperature and heterostructure fabrication with manipulation of lattice strain are not easy and need systematic investigation. To make accurate connections between extinction coefficients and radiative recombination rates, chapter 2 will consider three closely related aspects of the size dependent spectroscopy of II-VI QDs. First, it will consider the existing literature on cadmium selenide (CdSe) QD absorption spectra and extinction coefficients. From these results and fine structure considerations Boltzmann weighted radiative lifetimes are calculated. These lifetimes are compared to values measured on very high quality CdSe and CdSe coated with zinc selenide (ZnSe) shells. Second, analogous literature data are analyzed for cadmium telluride (CdTe) nanocrystals and compared to lifetimes measured for very high quality QDs. Furthermore, studies of the absorption and excitation spectra and measured radiative lifetimes for CdTe/CdSe Type-II core/shell QDs are reported. These results are also analyzed in

  3. Syntheses and applications of Mn-doped II-VI semiconductor nanocrystals.

    PubMed

    Yang, Heesun; Santra, Swadeshmukul; Holloway, Paul H

    2005-09-01

    Luminescent Mn-doped II-VI semiconductor nanocrystals have been intensively investigated over the last ten years. Several semiconductor host materials such as ZnS, CdS, and ZnSe have been used for Mn-doped nanocrystals with different synthetic routes and surface passivation. Beyond studies of their fundamental properties including photoluminescence and size, these luminescent nanocrystals have now been tested for practical applications such as electroluminescent displays and biological labeling agents (biomarkers). Here, we first review ZnS:Mn, CdS:Mn/ZnS core/shell, and ZnSe:Mn nanocrystal systems in terms of their synthetic chemistries and photoluminescent properties. Second, based on ZnS:Mn and CdS:Mn/ZnS core/shell nanocrystals as electroluminescent components, direct current electroluminescent devices having a hybrid organic/inorganic multilayer structure are reviewed. Highly luminescent and photostable CdS:Mn/ZnS nanocrystals can further be used as the luminescent biomarkers and some preliminary results are also discussed here. PMID:16193951

  4. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals.

    PubMed

    Zhai, You; Shim, Moonsub

    2015-12-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission. PMID:26510444

  5. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhai, You; Shim, Moonsub

    2015-10-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  6. Chemistry of the colloidal group II-VI nanocrystal synthesis

    NASA Astrophysics Data System (ADS)

    Liu, Haitao

    In the last two decades, the field of nanoscience and nanotechnology has witnessed tremendous advancement in the synthesis and application of group II-VI colloidal nanocrystals. The synthesis based on high temperature decomposition of organometallic precursors has become one of the most successful methods of making group II-VI colloidal nanocrystals. This method is first demonstrated by Bawendi and coworkers in 1993 to prepare cadmium chalcogenide colloidal quantum dots and later extended by others to prepare other group II-VI quantum dots as well as anisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod. This dissertation focuses on the chemistry of this type of nanocrystal synthesis. The synthesis of group II-VI nanocrystals was studied by characterizing the molecular structures of the precursors and products and following their time evolution in the synthesis. Based on these results, a mechanism was proposed to account for the reaction between the precursors that presumably produces monomer for the growth of nanocrystals. Theoretical study based on density functional theory calculations revealed the detailed free energy landscape of the precursor decomposition and monomer formation pathway. Based on the proposed reaction mechanism, a new synthetic method was designed that uses water as a novel reagent to control the diameter and the aspect ratio of CdSe and US nanorods.

  7. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This method is first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  8. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This methodis first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  9. Atomic-Scale Characterization of II-VI Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, David J.

    2013-11-01

    Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

  10. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  11. AX centers in II-VI semiconductors: Hybrid functional calculations

    NASA Astrophysics Data System (ADS)

    Biswas, Koushik; Du, Mao-Hua

    2012-02-01

    Group-V acceptors should be efficient hole producers in II-VI compounds as in ZnTe. However, good p-type conductivity remains elusive, for example in ZnO and ZnS. With regard to this low doping efficiency, we will discuss the dopant self-compensation in II-VI semiconductors through the formation of the AX center. These are acceptor-induced defect that acts as a donor to compensate the acceptor itself. We show that the artificially high valence band maximum in Local density approximation and Generalized gradient approximation calculations can lead to incorrect prediction on the stability of the AX center in these semiconductors. The hybrid functional calculations that correct the band gap, significantly stabilize the AX centers for selected group-V acceptor dopants in ZnO, ZnS, and ZnSe. The results on AX centers obtained by hybrid functional calculations agree well with the experimentally observed doping phenomena in ZnS and ZnSe.[1] [1] Koushik Biswas and Mao-Hua Du, Applied Physics Letters 98, 181913 (2011).

  12. Monolayer II-VI semiconductors: A first-principles prediction

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Li, Xian-Bin; Chen, Nian-Ke; Xie, Sheng-Yi; Tian, Wei Quan; Chen, Yuanping; Xia, Hong; Zhang, S. B.; Sun, Hong-Bo

    2015-09-01

    A systematic study of 32 honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetically stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe, BaTe, and HgTe honeycomb monolayers have a good dynamic stability. The stability of the five oxides is consistent with the work published by Zhuang et al. [Appl. Phys. Lett. 103, 212102 (2013), 10.1063/1.4831972]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P 4 /n m m (129 ) ] and orthorhombic HgS [P 21/m (11 ) ] . The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region. Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin-orbital coupling (SOC) [J. Li et al., arXiv:1412.2528]. Some II-VI partners with less than 5 % lattice mismatch may be used to design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics, and strong correlated electronics.

  13. FTIR Spectroscopic Characterization Of II-VI Semiconductors

    NASA Technical Reports Server (NTRS)

    Perry, G. L. E.; Szofran, F. R.

    1991-01-01

    Combination of commercial Fourier-transform infrared (FTIR) spectrometer with computer and special-purpose software constitutes highly automated facility for acquisition and processing of infrared transmission or reflection spectral image data. Intended principally to acquire transmission spectra of some compounds of elements in groups II and VI of periodic table. System used to characterize specimens of II/VI alloy semiconductors grown by directional solidification and quenching. Transmission-edge maps helpful in studies of flows, gradients of temperature, and coefficients of diffusion in solidifying melts. Data acquired by system include optical characteristics, and they both verify and complement data obtained by such other techniques as measurements of density and x-ray-dispersion analysis.

  14. Close-spaced vapor transport of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Perrier, Gerard

    1991-12-01

    The close spaced vapor transport (CSVT) is an efficient and cost-effective technique that allows the growth of polycrystalline as well as epitaxial thin layers of semiconductors. It has been applied to II-VI materials, especially to zinc and cadmium chalcogenides. A summary table including the deposition parameters, i.e., the nature of the ambient gas, the temperature of the source, the temperature difference between source and substrate, and the values of the growth rates measured on various substrates is presented for ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. Experimental results concerning the growth of ZnSe on GaAs substrates are also reported. The CSVT system uses an Ar atmosphere and the working temperature is ca. 825 degree(s)C. The temperatures of source and substrate are measured during deposition and growth rates of the ZnSe films are studied as a function of the reciprocal temperature of the substrate surface for GaAs and quartz (inert) substrates. The measured values of the growth rate are compared to the theoretical ones given by the reaction-limited model and the diffusion-limited model. The validity of the models is discussed in terms of the nature of the molecules participating in the transport.

  15. Removal of GaAs growth substrates from II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

    2014-04-01

    We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

  16. Microwave-assisted synthesis of II-VI semiconductor micro-and nanoparticles towards sensor applications

    NASA Astrophysics Data System (ADS)

    Majithia, Ravish Yogesh

    Engineering particles at the nanoscale demands a high degree of control over process parameters during synthesis. For nanocrystal synthesis, solution-based techniques typically include application of external convective heat. This process often leads to slow heating and allows decomposition of reagents or products over time. Microwave-assisted heating provides faster, localized heating at the molecular level with near instantaneous control over reaction parameters. In this work, microwave-assisted heating has been applied for the synthesis of II-VI semiconductor nanocrystals namely, ZnO nanopods and CdX (X = Se, Te) quantum dots (QDs). Based on factors such as size, surface functionality and charge, optical properties of such nanomaterials can be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm ZnO zero-dimensional nanoparticles as seeds for generation of multi-legged quasi one-dimensional nanopods via heterogeneous nucleation. ZnO nanopods, having individual leg diameters of 13-15 nm and growing along the [0001] direction, can be synthesized in as little as 20 minutes. ZnO nanopods exhibit a broad defect-related PL spanning the visible range with a peak at ~615 nm. Optical sensing based on changes in intensity of the defect PL in response to external environment (e.g., humidity) is demonstrated in this work. Microwave-assisted synthesis was also used for organometallic synthesis of CdX(ZnS) (X = Se, Te) core(shell) QDs. Optical emission of these QDs can be altered based on their size and can be tailored to specific wavelengths. Further, QDs were incorporated in Enhanced Green-Fluorescent Protein -- Ultrabithorax (EGFP-Ubx) fusion protein for the generation of macroscale composite protein fibers via hierarchal self-assembly. Variations in EGFP- Ubx˙QD composite

  17. II-VI Semiconductor microstructures:from physics to optoelectronics

    NASA Astrophysics Data System (ADS)

    Pautrat, J. L.

    1994-12-01

    The tellurium compounds family displays many interesting features. The various compounds cover a very large range of bandgap energies from 0 (Cd{0.15}Hg0.85Te) to more than 3 eV (ZnTe : 2.4 eV ; MnTe : 3.2 eV ; MgTe : 3.5 eV). The lattice parameters of the various compounds are sometimes almost perfectly matched, as in the CdTe/CdxHg{1-x}Te case, or slightly enough mismatched for a coherent epitaxy to be performed. Furthermore, good quality Cd{0.96}Zn{0.04}Te substrates are now available which allow to grow a large variety of microstructures using molecular beam epitaxy. The thickness control of the deposited layers allows to design and grow sophisticated beterostructures incorporating monolayer thick features. The direct band gap of these materials makes them well-suited to many optoelectronic applications in the infrared and visible range. A few examples of applications are described in more details : i) microtip semiconductor laser based on a cold microtip electron emitter for cathodic pumping of a CdTe/CdMnTe laser cavity ; ii) multiquantum well structures showing a marked excitonic absorption band at room temperature and the disappearance of this band when an electric field is applied to the structure. Application to self electrooptic and photorefractive devices ; iii) Bragg mirrors for the infrared. In addition to the usual semiconductor properties, the manganese compounds display interesting properties which can be useful in the field of magnetooptics.

  18. Diluted II-VI oxide semiconductors with multiple band gaps.

    PubMed

    Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

    2003-12-12

    We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%. PMID:14683137

  19. Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Vogel, Dirk; Krüger, Peter; Pollmann, Johannes

    1996-08-01

    We report the construction of pseudopotentials that incorporate self-interaction corrections and electronic relaxation in an approximate but very efficient, physically well-founded, and mathematically well-defined way. These potentials are particularly useful for II-VI compounds which are distinguished by their highly localized and strongly bound cationic semicore d electrons. Self-interaction corrections to the local-density approximation (LDA) of density-functional theory are accounted for in the solids to a significant degree by constructing appropriate self-interaction-corrected (SIC) pseudopotentials that take atomic SIC contributions into account. In this way translational symmetry of the Hamiltonian is preserved. Without increasing the complexity of the numerical calculations we approximately account, in addition, for electronic relaxation in the solids by incorporating into our pseudopotentials relevant relaxation in the involved atoms. By this construction we arrive at very useful self-interaction and relaxation-corrected pseudopotentials and effective one-particle Hamiltonians which constitute the basis for ab initio LDA calculations yielding significant improvements in electronic properties of II-VI compound semiconductors and their surfaces. The procedure is computationally not more involved than any standard LDA calculation and, nevertheless, overcomes to a large extent the well-known shortcomings of ``state of the art'' LDA calculations employing standard pseudopotentials. Our results for electronic and structural properties of II-VI compounds agree with a whole body of experimental data.

  20. Nanocrystal structures

    SciTech Connect

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2008-12-30

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  1. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  2. Fracto-mechanoluminescence induced by impulsive deformation of II-VI semiconductors.

    PubMed

    Tiwari, Ratnesh; Dubey, Vikas; Ramrakhiani, Meera; Chandra, B P

    2015-09-01

    When II-VI semiconductors are fractured, initially the mechanoluminescence (ML) intensity increases with time, attains a maximum value Im at a time tm, at which the fracture is completed. After tm, the ML intensity decreases with time, Im increase linearly with the impact velocity v0 and IT initially increase linearly with v0 and then it attains a saturation value for a higher value of v0. For photoluminescence, the temperature dependence comes mainly from luminescence efficiency, ηo; however, for the ML excitation, there is an additional factor, rt dependent on temperature. During fracture, charged dislocations moving near the tip of moving cracks produce intense electric field, causes band bending. Consequently, tunneling of electrons from filled electron traps to the conduction band takes place, whereby the radiative electron-hole recombination give rise to the luminescence. In the proposed mechanism, expressions are derived for the rise, the time tm corresponding to the ML intensity versus time curve, the ML intensity Im corresponding to the peak of ML intensity versus time curve, the total fracto-mechanoluminescence (FML) intensity IT, and fast and slow decay of FML intensity of II-VI semiconductors. The FML plays a significant role in understanding the processes involved in biological detection, earthquake lights and mine failure. PMID:25669489

  3. Orientation-patterned II-VI semiconductor waveguides for quasi-phasematched nonlinear optics

    NASA Astrophysics Data System (ADS)

    Angell, Marilyn Joy

    1999-10-01

    The ability to grow epitaxial layers of II-VI compound semiconductors on GaAs substrates, the transparency of these materials to a broad range of visible wavelengths, and their strong second order susceptibility suggest that these materials should be promising for efficient nonlinear frequency conversion by on-chip integration with III-V pump lasers. This work investigates the use of semiconductor microfabrication techniques to create II-VI waveguides with laterally-patterned crystal orientation for quasi-phasematched second harmonic generation. The fabrication of periodically-patterned <100>/<111> CdTe on <100> GaAs substrates, using epitaxial growth by metalorganic chemical vapor deposition and a lithographic patterning process, is demonstrated. This process is adapted to create ZnTe/ZnSe waveguides with periodic lateral patterning of the crystal orientation. The optical properties of planar waveguides with orientation-patterned ZnTe core layers are characterized. Second harmonic generation is measured, but does not appear to be quasi-phasematched at the test wavelength. High optical losses are observed in the patterned waveguides, and the mechanism of the loss is investigated using X-ray diffractometry, atomic force microscopy, and angle-resolved scatterometry. These measurements suggest that the losses are primarily due to bulk defects in the <111>-oriented material. Waveguide patterning using <100>-oriented anti-phase domains, which have a single axis of crystal growth, is recommended in order to overcome this problem.

  4. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  5. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  6. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. Final technical report

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-05-01

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox sytems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Stabilization of n-CdSe against photodissolution has been achieved for the methanol/tetraethylammonium ferro-ferricyanide system. No degradation of the photocurrent or the electrode surface, even in the presence of traces of water, has been observed for runs up to 700 h at 6 mA/cm/sup 2/ and approx. AM1 light intensity. With higher quality single crystal CdSe, stable sort-circuit photocurrents of 15 to 17 mA/cm/sup 2/ and an open circuit voltage of 0.7 V (tungsten-halogen illumination) have been obtained, corresponding to a conversion efficiency of about 5%. Preliminary evaluation of a series of sulfur-containing 1,2-dithiolene metal complexes for stabilization of CdX photoanodes in acetonitrile solution has been completed. For the first time, a conducting polymer film (derived from pyrrole) has been electrochemically deposited on a semiconductor electrode. This could represent a breakthrough in the use of hydrophobic films to protect semiconductor photoanodes from dissolution/degradation. Mixed CdSe-CdTe solid solution electrodes were found to exhibit a minimum in both the flatband potential and the bandgap at approx. 65% CdTe. Both of these shifts would have a detrimental effect on the solar conversion efficiency.

  7. Characterization of convection related defects in II-VI compound semiconductors

    NASA Technical Reports Server (NTRS)

    Witt, August F.

    1993-01-01

    The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

  8. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    DOEpatents

    McCandless, Brian E.

    2001-06-26

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  9. Doping semiconductor nanocrystals.

    PubMed

    Erwin, Steven C; Zu, Lijun; Haftel, Michael I; Efros, Alexander L; Kennedy, Thomas A; Norris, David J

    2005-07-01

    Doping--the intentional introduction of impurities into a material--is fundamental to controlling the properties of bulk semiconductors. This has stimulated similar efforts to dope semiconductor nanocrystals. Despite some successes, many of these efforts have failed, for reasons that remain unclear. For example, Mn can be incorporated into nanocrystals of CdS and ZnSe (refs 7-9), but not into CdSe (ref. 12)--despite comparable bulk solubilities of near 50 per cent. These difficulties, which have hindered development of new nanocrystalline materials, are often attributed to 'self-purification', an allegedly intrinsic mechanism whereby impurities are expelled. Here we show instead that the underlying mechanism that controls doping is the initial adsorption of impurities on the nanocrystal surface during growth. We find that adsorption--and therefore doping efficiency--is determined by three main factors: surface morphology, nanocrystal shape, and surfactants in the growth solution. Calculated Mn adsorption energies and equilibrium shapes for several nanocrystals lead to specific doping predictions. These are confirmed by measuring how the Mn concentration in ZnSe varies with nanocrystal size and shape. Finally, we use our predictions to incorporate Mn into previously undopable CdSe nanocrystals. This success establishes that earlier difficulties with doping are not intrinsic, and suggests that a variety of doped nanocrystals--for applications from solar cells to spintronics--can be anticipated. PMID:16001066

  10. Optical properties of II-VI semiconductor nanoclusters for use as phosphors

    NASA Astrophysics Data System (ADS)

    Wilcoxon, Jess P.; Newcomer, Paula

    2002-11-01

    The optical properties of both II-VI (direct gap) and type IV (indirect gap) nanosize semiconductors are significantly affected not only by their size, but by the nature of the chemical interface of the cluster with the embedding medium. This affects the light conversion efficiency and can alter the shape and position (i.e. the color) of the photoluminescence (PL). As the goal of our work is to embed nanoclusters into either organic or inorganic matrices for use as near UV, LED-excited phosphor thin films, understanding and controlling this interface is very important for preserving the high Q.E. of nanoclusters known for dilute solution conditions. We describe a room temperature synthesis of semiconductor nanoclusters which employs inexpensive, less toxic ionic precursors (metal salts), and simple coordinating solvents (e.g. tetrahydrofuran). This allows us to add passivating agents, ions, metal or semiconductor coatings to identical, highly dispersed bare clusters, post-synthesis. We can also increase the cluster size by heterogeneous growth on the seed nanoclusters. One of the most interesting observations for our II-VI nanomaterials is that both the absorbance excitonic features and the photoluminescence (PL) energy and intensity depend on the nature of the surface as well as the average size. In CdS, for example, the presence of electron traps (i.e Cd(II) sites) decreases the exciton absorbance peak amplitude but increases the PL nearly two-fold. Hole traps (i.e. S(II)) have the opposite effect. In the coordinating solvents used for the synthesis, the PL yield for d~2 nm, blue emitting CdSe clusters increases dramatically with sample age as the multiple absorbance features sharpen. Liquid chromatographic (LC) separation of the nanoclusters from other chemicals and different sized clusters is used to investigate the intrinsic optical properties of the purified clusters and identify which clusters are contributing most strongly to the PL. Both LC and dynamic

  11. Simulations of Liquid III-V and II-VI Semiconductors: Semiconducting versus Metallic Behavior.

    NASA Astrophysics Data System (ADS)

    Godlevsky, V.

    2000-03-01

    All III-V group semiconductors exhibit metallic behavior when melted. The coordination number of these materials changes from 4 in the bulk to ~ 6 in the liquid phase. With the increase of the coordination number and compositional disorder common to liquid III-V semiconductors, the covalent bonds of these materials are predominantly replaced by metallic bonds. Electron delocalization and high atomic randomization result in a large entropy change during the solidarrowliquid transition. Unlike III-V compounds, a number of II-VI semiconductors (e.g. CdTe, ZnTe and HgS) experience a semiconductorarrowsemiconductor transition upon melting. These compounds retain their fourfold coordination in the liquid phase. In our work, we perform ab initio simulations of liquid GaAs (l-GaAs) and CdTe (l-CdTe), as representatives of III-V and II-VI materials.(V. Godlevsky, J. Derby, and J.R. Chelikowsky, Phys. Rev. Lett. 81), 4959 (1998) As opposed to the more close-packed l-GaAs, l-CdTe has an open fourfold structure. Besides the coordination number, l-CdTe also retains some of its crystalline compositional features (e.g. there are fewer ``wrong'' bond defects than in l-GaAs). In l-CdTe, the density of states has a dip at the Fermi level indicating the semiconducting character of electrical conductivity in this material. The d.c. conductivity in l-CdTe is by two orders of magnitude lower than that in l-GaAs. The small change in the structural order and electron delocalization is in good agreement with the small entropy change observed experimentally during the melting of CdTe. As the temperature increases further, l-CdTe undergoes a fourfold-sixfold transition accompanied by the disappearing of band gap. The d.c. conductivity of sixfold coordinated l-CdTe is by an order of magnitude larger than the d.c. conductivity of fourfold coordinated l-CdTe.(V. Godlevsky, M. Jain, J. Derby, and J.R. Chelikowsky, Phys. Rev. B, 60), 8640 (1999)

  12. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

    SciTech Connect

    Girndt, A.; Jahnke, F.; Knorr, A.; Koch, S.W.; Chow, W.W.

    1997-04-21

    Quasi-equilibrium excitation dependent optical probe spectra of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k {center_dot} p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSe/ZnSe and CdZnSe/MnZnSSe semiconductor quantum-well systems.

  13. Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors: Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Chanier, T.; Virot, F.; Hayn, R.

    2009-05-01

    We have calculated the chemical trend of magnetic exchange parameters ( Jdd , Nα , and Nβ ) of Zn-based II-VI semiconductors ZnA ( A=O , S, Se, and Te) doped with Co or Mn. We show that a proper treatment of electron correlations by the local spin-density approximation (LSDA)+U method leads to good agreement between experimental and theoretical values of the nearest-neighbor exchange coupling Jdd between localized 3d spins in contrast to the LSDA method. The exchange couplings between localized spins and doped electrons in the conduction band Nα are in good agreement with experiment as well. But the values for Nβ (coupling to doped holes in the valence band) indicate a crossover from weak coupling (for A=Te and Se) to strong coupling (for A=O ) and a localized hole state in ZnO:Mn. This hole localization explains the apparent discrepancy between photoemission and magneto-optical data for ZnO:Mn.

  14. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  15. Developing Spectroscopic Ellipsometry to Study II-Vi and Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Young-Dong

    We have constructed a rotating analyzer spectroscopic ellipsometer (RAE) to study effects of magnetic and nonmagnetic doping on the E_1 and E _1 + Delta_1 band gap energies in ZnSe-based II-VI semiconductors. To remove the natural surface oxide overlayer which distorts the intrinsic dielectric response of the sample, a chemical etching technique using dilute NH_4OH solution was developed. The successful removal of the oxide overlayer on ZnSe was confirmed via the XPS technique. For diluted magnetic semiconductors (DMS), we found that the E_1 and E _1 + Delta_1 band gap energies increase with x for Zn_{1-x}Fe _{x}Se and Zn_ {1-x}Co_{x}Se, and decrease with x for Zn_{1-x} Mn_{x}Se. An sp -d direct exchange interaction model which explained the Gamma-point band gap energy of Zn _{1-x}Mn_ {x}Se was applied. The calculated band gap energies at the L-point are only consistent with Zn _{1-x}Mn_ {x}Se data. We showed that an sp-d hybridization model, which includes the location of the energy levels of the magnetic impurity d-levels can account for the concentration dependence of E_1 and E _1 + Delta_1 band gap energies of all three materials. For Zn_{x}Cd _{1-x}Se systems, all spectral features of CdSe were identified as E_0, E_0 + Delta_0, E_1, E_1 + Delta_1, E_2, and E _sp{0}{'} threshold energies from band structure calculations using a nonlocal empirical pseudopotential method. Many-body effect has to be included in the calculation of the dielectric function of CdSe to obtain good agreement with the measured spectrum. Concentration dependent spin-orbit splitting band gap Delta _1(x) is well explained by the statistical fluctuation of the alloy composition.

  16. Exciton Kinetics in Strained II-Vi Semiconductor Multiple Quantum Wells.

    NASA Astrophysics Data System (ADS)

    Hefetz, Yaron

    1987-09-01

    Two groups of wide gap II-VI semiconductor superlattices based on ZnSe/Zn(,1-x)Mn(,x)Se and CdTe/ZnTe were investigated using CW and time-resolved photoluminescence, excitation, reflectance, and photomodulated reflectance spectroscopy at various temperatures and under an external magnetic field. All these lattice mismatch strained layer structures were grown by MBE technique and exhibit strong excitonic photoluminescence at low temperatures. By studying the dynamics of the exciton recombination processes, the role of strain, quantum confinement and localization effects were revealed. In the CdTe/ZnTc system where the lattice mismatch is (DELTA)a/a (TURNEQ) 6% the inhomogeneously broadened ((TURN)40 mev) luminescence line is governed by excitonic localization in well width fluctuations. Exchange interactions of the carriers with the Mn('++) ions in the dilute magnetic semiconductor Zn(,1-x)Mn(,x)Se in thin film and the barrier of the MQW structures influence their optical behavior in an exernal magnetic field. "Giant" Zeeman splittings of up to (TURN)10 mev/Tesla were measured in samples with moderate Mn concentration (x = .23). Antiferromagnetic interaction reduces these splittings in samples with higher Mn concentrations. In observing the time evolution of the carrier in Zn(,1-x)Mn(,x)Se MQW we found that the capture time of these carriers into the well is on the order of 1 psec but the last stages of thermalization, exciton formations and localization is (TURN)70 ps. The fast capture of electrons and holes into the quantum wells bypass the energy transfer into the Mn internal transition that is responsible to the efficient "yellow" luminescence in ZnMnSe mixed crystals.

  17. Doped semiconductor nanocrystal junctions

    NASA Astrophysics Data System (ADS)

    Borowik, Ł.; Nguyen-Tran, T.; Roca i Cabarrocas, P.; Mélin, T.

    2013-11-01

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND≈1020-1021cm-3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as ND-1/3, and depleted charge linearly increasing with the NC diameter and varying as ND1/3. We thus establish a "nanocrystal counterpart" of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  18. Exciton-Phonon Interaction Effects in II-Vi Compound Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Pelekanos, Nikolaos Themelis

    1992-01-01

    In this thesis, we report on two specific examples of exciton-LO phonon Frohlich interaction effects, namely, hot carrier relaxation and temperature dependent exciton linewidth broadening. These phenomena are considered in the context of quasi-two dimensional excitons in strongly polar II-VI semiconductor quantum wells. Hot-exciton luminescence phenomena are investigated in a single quantum well of ZnTe/MnTe where tunneling through thin MnTe barrier layers suppresses the formation of thermalized luminescence. For near resonant photoexcitation, the secondary emission spectrum is modulated by distinct LO-phonon peaks, which, for sufficiently high order of scattering ( >=4), behave like hot luminescence (HPL) as opposed to resonant Raman scattering. This is confirmed by time-resolved spectroscopy as well as by steady-state characteristics such as linewidth broadening and lack of polarization memory. Several novel observations are made: (1) The LO-phonon intermediated energy relaxation involves Coulomb-correlated pairs, i.e. hot excitons, as opposed to independently-relaxing free electrons and holes. (2) The additional weak disorder originating from QW thickness fluctuations plays a major role in the details of the HPL spectra. The major contribution to the ground state exciton linewidth at room temperature originates from LO phonon -intermediated exciton scattering to higher exciton states. A measure of the effect is given by the parameter Gamma_{LO} which increases with the polarity of the material and is independent of dimensionality provided that the LO phonon energy is greater than the exciton binding energy. Measurements of Gamma_{LO} are performed in two quantum well systems: CdTe/MnTe and (Zn,Cd)Se/ZnSe. In the latter system, a strong reduction of Gamma _{LO} is observed as the quantum well width becomes comparable to the three-dimensional exciton Bohr radius. This is explained in terms of a model where quasi-2D confinement effects increase the exciton binding

  19. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  20. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  1. Doped semiconductor nanocrystal junctions

    SciTech Connect

    Borowik, Ł.; Mélin, T.; Nguyen-Tran, T.; Roca i Cabarrocas, P.

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  2. Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Mourad, D.; Czycholl, G.

    2012-05-01

    For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A x B1- x C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we show that the electronic properties of such A x B1- x C semiconductors and, in particular, the band gap bowing can well be described and understood starting from empirical tight-binding models for the pure AC and BC systems. The electronic properties of the A x B1- x C system can be described by choosing the tight-binding parameters of the AC or BC system with probabilities x and 1 - x, respectively. We demonstrate this by exact diagonalization of finite but large supercells and by means of calculations within the established coherent potential approximation (CPA) We apply this treatment to the II-VI system Cd x Zn1- x Se, to the III-V system In x Ga1- x As and to the III-nitride system Ga x Al1- x N.

  3. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  4. Large Exciton Energy Shifts by Reversible Surface Exchange in 2D II-VI Nanocrystals.

    PubMed

    Zhou, Yang; Wang, Fudong; Buhro, William E

    2015-12-01

    Reaction of n-octylamine-passivated {CdSe[n-octylamine](0.53±0.06)} quantum belts with anhydrous metal carboxylates M(oleate)2 (M = Cd, Zn) results in a rapid exchange of the L-type amine passivation for Z-type M(oleate)2 passivation. The cadmium-carboxylate derivative is determined to have the composition {CdSe[Cd(oleate)2](0.19±0.02)}. The morphologies and crystal structures of the quantum belts are largely unaffected by the exchange processes. Addition of n-octylamine or oleylamine to the M(oleate)2-passivated quantum belts removes M(oleate)2 and restores the L-type amine passivation. Analogous, reversible surface exchanges are also demonstrated for CdS quantum platelets. The absorption and emission spectra of the quantum belts and platelets are reversibly shifted to lower energy by M(oleate)2 passivation vs amine passivation. The largest shift of 140 meV is observed for the Cd(oleate)2-passivated CdSe quantum belts. These shifts are attributed entirely to changes in the strain states in the Zn(oleate)2-passivated nanocrystals, whereas changes in strain states and confinement dimensions contribute roughly equally to the shifts in the Cd(oleate)2-passivated nanocrystals. Addition of Cd(oleate)2, which electronically couples to the nanocrystal lattices, increases the effective thickness of the belts and platelets by approximately a half of a monolayer, thus increasing the confinement dimension. PMID:26568026

  5. Photoluminescence quantum efficiency of various ternary II VI semiconductor solid solutions

    NASA Astrophysics Data System (ADS)

    Westphäling, R.; Bauer, S.; Klingshirn, C.; Reznitstsky, A.; Verbin, S.

    1998-02-01

    As a result of the spatial localization of excitons in II-VI mixed crystals the external luminescence quantum efficiency η lum is expected to be remarkably higher than in the corresponding binary compounds. To investigate this assumption we built a new experimental setup with a miniature integrating sphere fitted into a cryostat. At low temperatures in the binary systems CdS and CdSe we always found η lum ⩽ 25% in the main luminescence bands (arising from bound excitons (D 0X, A 0X) and donor—acceptor pair recombination). For the free-exciton luminescence η lum was more than two orders of magnitude less. In contrast, CdS 1- xSe x mixed crystals show η lum up to 70% in the luminescence from localized states, indicating that the nonradiative recombination is strongly suppressed for localized excitons. Other II-VI alloys (ZnSe 1- xTe x Zn 1- xCd xS and Zn 1- xCd xSe) show partly considerably lower values for η lum. The temperature dependence of η lum gives information about various activation processes to nonradiative recombination channels.

  6. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  7. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  8. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chishti, Sabiq; Ghosh, Bahniman; Bishnoi, Bhupesh

    2015-02-01

    We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms considered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature (4-500 K) at a fixed diameter of 10 nm and also by varying the diameter (8-12 nm) at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D'yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length (SRL) on the diameter and temperature has been analyzed.

  9. General synthesis of manganese-doped II-VI and III-V semiconductor nanowires.

    PubMed

    Radovanovic, Pavle V; Barrelet, Carl J; Gradecak, Silvija; Qian, Fang; Lieber, Charles M

    2005-07-01

    A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices. PMID:16178248

  10. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  11. Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

    NASA Astrophysics Data System (ADS)

    Sazio, Pier J. A.; Sparks, Justin R.; He, Rongrui; Krishnamurthi, Mahesh; Fitzgibbons, Thomas C.; Chaudhuri, Subhasis; Baril, Neil F.; Peacock, Anna C.; Healy, Noel; Gopalan, Venkatraman; Badding, John V.

    2015-02-01

    ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

  12. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  13. Thermophysical analysis of II-VI semiconductors by PPE calorimetry and lock-in thermography

    SciTech Connect

    Streza, M.; Dadarlat, D.; Strzałkowski, K.

    2013-11-13

    An accurate determination of thermophysical properties such as thermal diffusivity, thermal effusivity and thermal conductivity is extremely important for characterization and quality assurance of semiconductors. Thermal diffusivity and effusivity of some binary semiconductors have been investigated. Two experimental techniques were used: a contact technique (PPE calorimetry) and a non contact technique (lock-in thermography). When working with PPE, in the back (BPPE) configuration and in the thermally thick regim of the pyroelectric sensor, we can get the thermal diffusivity of the sample by performing a scanning of the excitation frequency of radiation. Thermal effusivity is obtained in front configuration (sensor directly irradiated and sample in back position) by performing a thickness scan of a coupling fluid. By using the lock-in thermography technique, the thermal diffusivity of the sample is obtained from the phase image. The results obtained by the two techniques are in good agreement. Nevertheless, for the determination of thermal diffusivity, lock-in thermography is preferred.

  14. Optical Properties of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gaponenko, S. V.

    1998-10-01

    Low-dimensional semiconductor structures, often referred to as nanocrystals or quantum dots, exhibit fascinating behavior and have a multitude of potential applications, especially in the field of communications. This book examines in detail the optical properties of these structures, gives full coverage of theoretical and experimental results, and discusses their technological applications. The author begins by setting out the basic physics of electron states in crystals (adopting a "cluster-to-crystal" approach), and goes on to discuss the growth of nanocrystals, absorption and emission of light by nanocrystals, optical nonlinearities, interface effects, and photonic crystals. He illustrates the physical principles with references to actual devices such as novel light-emitters and optical switches. The book covers a rapidly developing, interdisciplinary field. It will be of great interest to graduate students of photonics or microelectronics, and to researchers in electrical engineering, physics, chemistry, and materials science.

  15. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

    PubMed Central

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-01-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

  16. High Resolution Triple Axis X-Ray Diffraction Analysis of II-VI Semiconductor Crystals

    NASA Technical Reports Server (NTRS)

    Volz, H. M.; Matyi, R. J.

    1999-01-01

    The objective of this research program is to develop methods of structural analysis based on high resolution triple axis X-ray diffractometry (HRTXD) and to carry out detailed studies of defect distributions in crystals grown in both microgravity and ground-based environments. HRTXD represents a modification of the widely used double axis X-ray rocking curve method for the characterization of grown-in defects in nearly perfect crystals. In a double axis rocking curve experiment, the sample is illuminated by a monochromatic X-ray beam and the diffracted intensity is recorded by a fixed, wide-open detector. The intensity diffracted by the sample is then monitored as the sample is rotated through the Bragg reflection condition. The breadth of the peak, which is often reported as the full angular width at half the maximum intensity (FWHM), is used as an indicator of the amount of defects in the sample. This work has shown that high resolution triple axis X-ray diffraction is an effective tool for characterizing the defect structure in semiconductor crystals, particularly at high defect densities. Additionally, the technique is complimentary to X-ray topography for defect characterization in crystals.

  17. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors.

    PubMed

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-01-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 10(7) A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38-65 μA) and response speed (40-60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

  18. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

    NASA Astrophysics Data System (ADS)

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-06-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.

  19. Mixed semiconductor nanocrystal compositions

    DOEpatents

    Maskaly, Garry R.; Schaller, Richard D.; Klimov, Victor I.

    2011-02-15

    Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and wherein the ratio of the number of energy donors to the number of energy acceptors is from about 2:1 to about 1000:1.

  20. Green synthesis of water soluble semiconductor nanocrystals and their applications

    NASA Astrophysics Data System (ADS)

    Wang, Ying

    II-VI semiconductor nanomaterials, e.g. CdSe and CdTe, have attracted great attention over the past decades due to their fascinating optical and electrical properties. The research presented here focuses on aqueous semiconductor nanomaterials. The work can be generally divided into three parts: synthesis, property study and application. The synthetic work is devoted to develop new methods to prepare shape- and structure-controlled II-VI semiconductor nanocrystals including nanoparticles and nanowires. CdSe and CdSe CdS semiconductor nanocrystals have been synthesized using sodium citrate as a stabilizer. Upon prolonged illumination with visible light, photoluminescence quantum yield of those quantum dots can be enhanced up to 5000%. The primary reason for luminescence enhancement is considered to be the removing of specific surface states (photocorrosion) and the smoothing of the CdSe core surface (photoannealing). CdTe nanowires are prepared through self-organization of stabilizer-depleted CdTe nanoparticles. The dipolar-dipolar attraction is believed to be the driving force of nanowire formation. The rich surface chemistry of CdTe nanowire is reflected by the formation of silica shell with different morphologies when nanowires with different capping ligands are used. Te and Se nanowires are prepared by chemical decomposition of CdTe and CdSe nanoparticles in presence of an external chemical stimulus, EDTA. These results not only provide a new example of NP→NW transformation, but also lead to a better understanding of the molecular process occurring in the stabilizer-depleted nanoparticles. The applications of those semiconductor materials are primarily based on the construction of nano-structured ultrathin films with desirable functions by using layer-by-layer technique (LBL). We demonstrate that light-induced micro-scale multicolor luminescent patterns can be obtained on photoactivable CdSe/CdS nanoparticles thin films by combining the advantages of LBL as

  1. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  2. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    SciTech Connect

    Chen, Zhiyi Zhao, Lukas; Krusin-Elbaum, Lia; Garcia, Thor Axtmann; Tamargo, Maria C.; Hernandez-Mainet, Luis C.; Deng, Haiming

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductor–TI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (∼6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  3. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Yan, Yanfa; Wei, Su-Huai

    2015-10-01

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  4. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  5. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  6. Electrochemical photovoltaic cells stabilization and optimization of II-VI semiconductors. Third technical progress report, 1 October 1980 to 31 December 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1981-01-20

    A program to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors is described. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. Work on redox couple stabilization of n-CdX photoanodes has focused on fast metal-based one-electron couples in various nonaqueous solvents which represent an extension of work with the methanol/ferro-ferricyanide system, which, although stabilizing for n-CdSe photoanodes, has been found to be photolytically unstable. Very promising results which were obtained for the FeCl/sub 4//sup 1-/2-/ couple in acetonitrile suggest that related chloro-couples should be considered, including the colorless two-electron tin (II, IV) and antimony (III, V) systems. Conducting polymer films of polyrrole photoelectrochemically deposited onto n-type semiconductors were previously shown to protect these electrode materials from photodecomposition while permitting electron exchange with the electrolyte, but poor adhesion has remained a key problem. Recently, improved adhesion has been attained for roughened semiconductor surfaces. It now appears that polypyrrole films are to some extent permeable to solvent/solute species since the film stability depends on the nature of the redox electrolyte, and semiconductor decomposition products seem to form underneath the film in some cases. One possibility for circumventing this problem is to incorporate larger species, e.g., phthalocyanine dyes, within the film matrix.

  7. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. First technical progress report, 15 April 1980-30 June 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-07-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Factors limiting the short circuit current of the n-CdSe/methanol/ferro-ferricyanide system to 17.5 mA/cm/sup 2/ have been identified. The principal limiting factor is apparently specific adsorption of hexacyanoferrate species on the electrode surface which occurs at higher redox couple concentrations and slows the overall charge transfer process. Ion pairing also occurs, resulting in a low mass transport rate (smaller diffusion coefficients and increased solution viscosity), and probably enhances the degree of specific adsorption. Improvements in the performance of this system will require mitigation of the interactions between the redox species and the electrode surface, e.g., via electrolytes with reduced ion-pairing tendencies or the use of electrode surface films. Photoelectrochemically generated polypyrrole films have been shown to protect CdX photoanodes from dissolution while permitting electron exchange with the electrolyte. Current effort is directed toward improving the film adhesion and optimizing the performance characteristics.

  8. Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

    SciTech Connect

    Alvarado, Samuel R.; Guo, Yijun; Ruberu, T. Purnima A.; Tavasoli, Elham; Vela, Javier

    2014-03-15

    The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductor–metal and semiconductor–metal oxide photocatalytic nanocomposites. In addition, we describe our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).

  9. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  10. Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Su, C.-H.; Szofran, F. R.; Scripa, R. N.; Cobb, S. D.; Lehoczky, S. L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

  11. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. Third technical progress report, 1 October-31 December 1979

    SciTech Connect

    Nouffi, R.; Tench, D.; Warren, L.

    1980-01-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Stabilization of n-CdSe against photodissolution has been achieved for the methanol/tetraethylammonium ferro-ferricyanide system. No degradation of the photocurrent or the electrode surface, even in the presence of traces of water, has been observed for runs up to 700 h at 6 mA/cm/sup 2/ and AM1 light intensity. In recent studies with higher quality single crystal CdSe as well as polycrystalline CdTe-CdSe photoanodes, stable photocurrents of 7.5 mA/cm/sup 2/, corresponding to 4.4% conversion efficiency have been obtained. Through the use of highly purified ferro-ferricyanide electrolytes and/or organic dications, higher conversion efficiencies should be attainable. Preliminary evaluation of a series of sulfur-containing 1,2-dithiolene metal complexes for stabilization of CdX (X=Se, Te, or S) photoanodes in acetonitrile solution has been completed. In certain cases, effective hole capture is indicated and favorable negative shifts in the flatband potentials have been observed. A conducting polymer film (derived from pyrrole) has been electrochemically deposited on a semiconductor electrode. These electrochemically generated polymer films seem to be exceptionally stable and adherent. Studies of the cyanide ion as an electron-transfer mediator in aqueous Fe(CN)/sub 6//sup 3 -///sup 4 -/ electrolytes, and new directions for chemical modification of CdX electrodes are also discussed.

  12. Wide-gap II-VI heterostructures

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Kolodziejski, L. A.; Kobayashi, M.; Otsuka, N.; Nurmikko, A. V.

    1990-04-01

    Recent advances in the growth of II-VI/II-VI and II-VI/III-V heterostructures based on the widegap II-VI semiconductors CdTe and ZnTe are discussed. The potentially important pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb has been grown by MBE and characterized. Both microstructural and optical evaluation indicate a high degree of structural quality and the potential for future development of novel light-emitting device structures. Metastable zincblende MnTe, for which TEM and X-ray evaluation reveal the presence of only zincblende phases, has been grown by MBE. Single quantum well structures using zincblende MnTe for the barrier layers have been fabricated and found to show strong carrier confinement, further confirming the predicted zincblende MnTe bandgap at 3.2 eV.

  13. Developing New Nanoprobes from Semiconductor Nanocrystals

    SciTech Connect

    Fu, Aihua

    2006-05-29

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  14. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  15. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  16. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  17. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  18. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  19. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  20. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  1. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  2. General synthetic approach to heterostructured nanocrystals based on noble metals and I-VI, II-VI, and I-III-VI metal chalcogenides.

    PubMed

    Liu, Minghui; Zeng, Hua Chun

    2014-08-19

    Solid metal precursors (alloys or monometals) can serve both as a starting template and as a source material for chemical transformation to metal chalcogenides. Herein, we develop a simple solution-based strategy to obtain highly monodisperse noble-metal-based heterostructured nanocrystals from such precursor seeds. By utilizing chemical and structural inhomogeneity of these metal seeds, in this work, we have synthesized a total of five I-VI (Ag2S, Ag2Se, Ag3AuS2, Ag3AuSe2, and Cu9S5), three II-VI (CdS, CdSe, and CuSe), and four I-III-VI (AgInS2, AgInSe2, CuInS2, and CuInSe2) chalcogenides, together with their fifteen associated heterodimers (Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, Au-Ag3AuSe2, Au-AgInS2, Au-AgInSe2, Au-CdS, Au-CdSe, Ag-Ag2S, Ag-AgInS2, Au-Cu9S5, Au-CuInS2, Au-CuSe, Au-CuInSe2, and Pt-AgInS2) to affirm the process generality. Briefly, by adding elemental sulfur or selenium to AuAg alloy seeds and tuning the reaction conditions, we can readily obtain phase-pure Au-Ag2S, Au-Ag2Se, Au-Ag3AuS2, and Au-Ag3AuSe2 heterostructures. Similarly, we can also fabricate Au-AgInS2 and Au-AgInSe2 heterostructures from the AuAg seeds by adding sulfur/selenium and indium precursors. Furthermore, by partial or full conversion of Ag seeds, we can prepare both single-phase Ag chalcogenide nanocrystals and Ag-based heterostructures. To demonstrate wide applicability of this strategy, we have also synthesized Au-based binary and ternary Cu chalcogenide (Au-Cu9S5, Au-CuSe, Au-CuInS2, and Au-CuInSe2) heterostructures from alloy seeds of AuCu and Pt chalcogenides (e.g., Pt-AgInS2) from alloy seeds of PtAg. The structure and composition of the above products have been confirmed with X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and energy-dispersive X-ray spectroscopy methods. A kinetic investigation of the formation mechanism of these heterostructures is brought forward using Au-AgInS2 and Ag-CuInS2 as model examples. PMID

  3. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  4. Pressure Induced Phase Transition (B3-B1) and Elastic Properties of II-Vi ZnSe Semiconductors

    NASA Astrophysics Data System (ADS)

    Varshney, Dinesh

    2012-07-01

    We evolve an effective interionic interaction potential (EIoIP) to investigate the pressure induced phase transitions from Zinc blende (B3) to Rocksalt (B1) structure in ZnSe semiconductor. The developed potential consists of the long-range Coulomb and three-body interactions (TBI) and the Hafemeister and Flygare type short-range (SR) overlap repulsion extended upto the second neighbor ions and the van der Waals (vdW) interaction. The three-body interactions arise from the electron-shell deformation when the nearest-neighbor ions overlap and has been employed for detailed studies of pressure-induced phase-transition behavior of ZnSe semiconductors. Our calculated value of the phase transition pressure (Pt) is higher and the magnitude of the discontinuity in volume at the transition pressure is consistent with reported data. The variation of second-order elastic constants with pressure resembles that observed in some binary semiconductors. It is inferred that the vdW interaction is effective in obtaining the Debye temperature, Gruneisen parameter, thermal expansion coefficient and compressibility. It is argued that the model with TBI (model II) has yielded somewhat more realistic predictions of the phase-transition and high-pressure behavior as compared to usual two-body potentials (model I) based on phenomenological approach.

  5. The structure and morphology of semiconductor nanocrystals

    SciTech Connect

    Kadavanich, A V

    1997-11-01

    Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group).

  6. Charge transport in semiconductor nanocrystal quantum dots

    NASA Astrophysics Data System (ADS)

    Mentzel, Tamar Shoshana

    In this thesis, we study charge transport in arrays of semiconductor nanocrystal quantum dots. Nanocrystals are synthesized in solution, and an organic ligand on the surface of the nanocrystal creates a potential barrier that confines charges in the nanocrystal. Optical absorption measurements reveal discrete electronic energy levels in the nanocrystals resulting from quantum confinement. When nanocrystals are deposited on a surface, they self-assemble into a close-packed array forming a nanocrystal solid. We report electrical transport measurements of a PbSe nanocrystal solid that serves as the channel of an inverted field-effect transistor. We measure the conductance as a function of temperature, source-drain bias and. gate voltage. The data indicates that holes are the majority carriers; the Fermi energy lies in impurity states in the bandgap of the nanocrystal; and charges hop between the highest occupied valence state in the nanocrystals (the 1S h states). At low source-drain voltages, the activation energy for hopping is given by the energy required to generate holes in the 1Sh state plus activation over barriers resulting from site disorder. The barriers from site disorder are eliminated with a sufficiently high source-drain bias. From the gate effect, we extract the Thomas-Fermi screening length and a density of states that is consistent with the estimated value. We consider variable-range hopping as an alternative model, and find no self-consistent evidence for it. Next, we employ charge sensing as an alternative to current measurements for studying transport in materials with localized sites. A narrow-channel MOSFET serves as a charge sensor because its conductance is sensitive to potential fluctuations in the nearby environment caused by the motion of charge. In particular, it is sensitive to the fluctuation of single electrons at the silicon-oxide interface within the MOSFET. We pattern a strip of amorphous germanium within 100 nm of the transistor. The

  7. Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2016-05-01

    Quantum kinetic equations of motion for carrier and impurity spins in paramagnetic II-VI diluted magnetic semiconductors in a k -dependent effective magnetic field are derived, where the carrier-impurity correlations are taken into account. In the Markov limit, rates for the electron-impurity spin transfer can be derived for electron spins parallel and perpendicular to the impurity spins corresponding to measurable decay rates in Kerr experiments in Faraday and Voigt geometry. Our rigorous microscopic quantum kinetic treatment automatically accounts for the fact that, in an individual spin flip-flop scattering process, a spin flip of an electron is necessarily accompanied by a flop of an impurity spin in the opposite direction and the corresponding change of the impurity Zeeman energy influences the final energy of the electron after the scattering event. This shift in the electron energies after a spin flip-flop scattering process, which usually has been overlooked in the literature, turns out to be especially important in the case of extremely diluted magnetic semiconductors in an external magnetic field. As a specific example for a k -dependent effective magnetic field the effects of a Rashba field on the dynamics of the carrier-impurity correlations in a Hg1 -x -yCdyMnxTe quantum well are described. It is found that, although accounting for the Rashba interaction in the dynamics of the correlations leads to a modified k -space dynamics, the time evolution of the total carrier spin is not significantly influenced. Furthermore, a connection between the present theory and the description of collective carrier-impurity precession modes is presented.

  8. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity. PMID:27494313

  9. Nanocrystal doped matrixes

    DOEpatents

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  10. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  11. Electron-beam-enhanced oxidation processes in II-VI compound semiconductors observed by high-resolution electron microscopy

    SciTech Connect

    Thangaraj, N.; Wessels, B.W.

    1990-02-01

    Enhanced oxidation of ZnS and ZnSe semiconductor surfaces has been observed in situ during electron irradiation in a high-resolution electron microscope. The phase present at the surface region has been identified as ZnO by optical diffractogram and selected area electron diffraction techniques. For ZnS oxidation, both hexagonal ZnO having a random orientation and cubic ZnO in perfect epitaxial relationship with the bulk ZnS were observed. Enhanced oxidation of ZnSe to ZnO has also been observed under electron beam irradiation. However, only the hexagonal form was observed. The oxidation rates for both ZnS and ZnSe depended on electron flux but was independent of orientation. A model in which the oxidation process is limited by diffusion through the oxide film is proposed. By electron irradiation the diffusion rate is enhanced presumably by a nonthermal process.

  12. Influence of the exchange-correlation functional on the quasi-harmonic lattice dynamics of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Skelton, Jonathan M.; Tiana, Davide; Parker, Stephen C.; Togo, Atsushi; Tanaka, Isao; Walsh, Aron

    2015-08-01

    We perform a systematic comparison of the finite-temperature structure and properties of four bulk semiconductors (PbS, PbTe, ZnS, and ZnTe) predicted by eight popular exchange-correlation functionals from quasi-harmonic lattice-dynamics calculations. The performance of the functionals in reproducing the temperature dependence of a number of material properties, including lattice parameters, thermal-expansion coefficients, bulk moduli, heat capacities, and phonon frequencies, is evaluated quantitatively against available experimental data. We find that the phenomenological over- and under-binding characteristics of the local-density approximation and the PW91 and Perdew-Burke-Enzerhof (PBE) generalised-gradient approximation (GGA) functionals, respectively, are exaggerated at finite temperature, whereas the PBEsol GGA shows good general performance across all four systems. The Tao-Perdew-Staroverov-Scuseria (TPSS) and revTPSS meta-GGAs provide relatively small improvements over PBE, with the latter being better suited to calculating structural and dynamical properties, but both are considerably more computationally demanding than the simpler GGAs. The dispersion-corrected PBE-D2 and PBE-D3 functionals perform well in describing the lattice dynamics of the zinc chalcogenides, whereas the lead chalcogenides appear to be challenging for these functionals. These findings show that quasi-harmonic calculations with a suitable functional can predict finite-temperature structure and properties with useful accuracy, and that this technique can serve as a means of evaluating the performance of new functionals in the future.

  13. Influence of the exchange-correlation functional on the quasi-harmonic lattice dynamics of II-VI semiconductors.

    PubMed

    Skelton, Jonathan M; Tiana, Davide; Parker, Stephen C; Togo, Atsushi; Tanaka, Isao; Walsh, Aron

    2015-08-14

    We perform a systematic comparison of the finite-temperature structure and properties of four bulk semiconductors (PbS, PbTe, ZnS, and ZnTe) predicted by eight popular exchange-correlation functionals from quasi-harmonic lattice-dynamics calculations. The performance of the functionals in reproducing the temperature dependence of a number of material properties, including lattice parameters, thermal-expansion coefficients, bulk moduli, heat capacities, and phonon frequencies, is evaluated quantitatively against available experimental data. We find that the phenomenological over- and under-binding characteristics of the local-density approximation and the PW91 and Perdew-Burke-Enzerhof (PBE) generalised-gradient approximation (GGA) functionals, respectively, are exaggerated at finite temperature, whereas the PBEsol GGA shows good general performance across all four systems. The Tao-Perdew-Staroverov-Scuseria (TPSS) and revTPSS meta-GGAs provide relatively small improvements over PBE, with the latter being better suited to calculating structural and dynamical properties, but both are considerably more computationally demanding than the simpler GGAs. The dispersion-corrected PBE-D2 and PBE-D3 functionals perform well in describing the lattice dynamics of the zinc chalcogenides, whereas the lead chalcogenides appear to be challenging for these functionals. These findings show that quasi-harmonic calculations with a suitable functional can predict finite-temperature structure and properties with useful accuracy, and that this technique can serve as a means of evaluating the performance of new functionals in the future. PMID:26277159

  14. Photocatalytic Solar Fuel Generation on Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Feldmann, Jochen

    2015-03-01

    I will review our scientific work on photocatalytic solar fuel generation utilizing colloidal semiconductor nanocrystals decorated with catalytic metal clusters. In particular, nanocrystals made of CdS, TiO2 and organo-metal halide perovskites will be discussed. Key issues are the role of hole scavangers (M. Berr et al., Appl. Phys. Lett. 100, 223903 (2012)), the size and density of catalytic clusters (M. Berr et al.: Appl. Phys. Lett. 97, 093108 (2010) and Nano Letters 12, 5903 (2012) , and dependencies on external parameters such as pH (T. Simon et al., Nature Mat. 13, 1013 (2014)). Financially supported by the Bavarian Research Cluster ``Solar Technologies Go Hybrid: SolTech''.

  15. Enantioselective cellular uptake of chiral semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Martynenko, I. V.; Kuznetsova, V. A.; Litvinov, I. K.; Orlova, A. O.; Maslov, V. G.; Fedorov, A. V.; Dubavik, A.; Purcell-Milton, F.; Gun'ko, Yu K.; Baranov, A. V.

    2016-02-01

    The influence of the chirality of semiconductor nanocrystals, CdSe/ZnS quantum dots (QDs) capped with L- and D-cysteine, on the efficiency of their uptake by living Ehrlich Ascite carcinoma cells is studied by spectral- and time-resolved fluorescence microspectroscopy. We report an evident enantioselective process where cellular uptake of the L-Cys QDs is almost twice as effective as that of the D-Cys QDs. This finding paves the way for the creation of novel approaches to control the biological properties and behavior of nanomaterials in living cells.

  16. Imaging "invisible" dopant atoms in semiconductor nanocrystals.

    PubMed

    Gunawan, Aloysius A; Mkhoyan, K Andre; Wills, Andrew W; Thomas, Malcolm G; Norris, David J

    2011-12-14

    Nanometer-scale semiconductors that contain a few intentionally added impurity atoms can provide new opportunities for controlling electronic properties. However, since the physics of these materials depends strongly on the exact arrangement of the impurities, or dopants, inside the structure, and many impurities of interest cannot be observed with currently available imaging techniques, new methods are needed to determine their location. We combine electron energy loss spectroscopy with annular dark-field scanning transmission electron microscopy (ADF-STEM) to image individual Mn impurities inside ZnSe nanocrystals. While Mn is invisible to conventional ADF-STEM in this host, our experiments and detailed simulations show consistent detection of Mn. Thus, a general path is demonstrated for atomic-scale imaging and identification of individual dopants in a variety of semiconductor nanostructures. PMID:22107439

  17. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  18. Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation

    SciTech Connect

    Budai, J.D.; White, C.W.; Withrow, S.P.; Zuhr, R.A.; Zhu, J.G.

    1996-12-01

    High-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. The authors have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdS{sub x}Se{sub 1{minus}x}, CdTe, ZnS, ZnSe) in fused silica, Al{sub 2}O{sub 3} and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.

  19. Final Report for Nucleation and growth of semiconductor nanocrystals by solid-phase reaction

    SciTech Connect

    P. D. Persans; T. M. Hayes

    2005-12-12

    This final report describes the technical output of a scientific program aimed at understanding the formation and structure of II-VI nanocrystals formed by solid phase precipitation within a glass environment. The principle probes were optical absorption spectroscopy to determine crystallite sizes, Raman scattering to determine composition, and x-ray absorption spectroscopy to study the evolution of local reactant environments.

  20. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2008-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  1. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-20

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  2. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  3. Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation

    NASA Astrophysics Data System (ADS)

    Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

    2016-07-01

    Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due

  4. Synthesis of Doped Semiconductor Nanocrystals and Conductive Coatings

    NASA Astrophysics Data System (ADS)

    Wills, Andrew Wilke

    Semiconductor nanocrystals are an intriguing class of materials because of their size-tunable properties. This makes them promising for future optoelectronic devices such as solar cells and light emitting diodes. Realization of these devices, however, requires precise control of the flow of electricity through the particles. In bulk semiconductors, this is achieved by using materials with few unintentional defects, then intentionally adding particular defects or dopants to alter the semiconductor's electronic properties. In contrast, the addition of electrically active dopants has scarcely been demonstrated in semiconductor nanocrystals, and charge transport is hindered by the barrier of electron hopping between particles. The goal of this thesis, therefore, is to discover new methods to control charge transport in nanocrystals. It divides into three major thrusts: 1) the investigation of the doping process in semiconductor nanocrystals, 2) the invention of new synthetic methods to incorporate electrically active dopants into semiconductor nanocrystals, and 3) the invention of a new nanocrystal surface coating that aids processing of nanocrystals into devices but can be removed to enhance charge transport between particles. The first objective is achieved by the comparison of four different precursors that have been used to dope Mn into nanocrystals. Experiments show that dimethylmanganese incorporates efficiently into ZnSe nanocrystals while other precursors are less efficient and sometimes lower the quality of the nanocrystals produced. The second goal is met by the application of a core-shell synthetic strategy to the incorporation of non-isovalent impurities (Al and In) into CdSe nanocrystals. By separating the three steps of nucleation, dopant binding, and growth, each step can be optimized so that doping is achieved and high quality particles are produced. Detailed characterization shows dopant incorporation and local environment, while transistor

  5. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. PMID:26618885

  6. Metal-insulator transition in films of doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Ting; Reich, K. V.; Kramer, Nicolaas J.; Fu, Han; Kortshagen, Uwe R.; Shklovskii, B. I.

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  7. Diorganyl dichalcogenides as useful synthons for colloidal semiconductor nanocrystals.

    PubMed

    Brutchey, Richard L

    2015-11-17

    The ability to synthesize colloidal semiconductor nanocrystals in a well-controlled manner (i.e., with fine control over size, shape, size dispersion, and composition) has been mastered over the past 15 years. Much of this success stems from careful studies of precursor conversion and nanocrystal growth with respect to phosphine chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals. Despite the high level of success that has been achieved with phosphine chalcogenides, there has been a longstanding interest in exploring alternate chalcogenide precursors because of issues associated with phosphine chalcogenide cost, purity, toxicity, etc. This has resulted in a large body of literature on the use of sulfur and selenium dissolved in octadecene or amines, thio- and selenoureas, and silyl chalcogenides as alternate chalcogenide precursors for metal chalcogenide nanocrystal synthesis. In this Account, emerging work on the use of diorganyl dichalcogenides (R-E-E-R, where E = S, Se, or Te and R = alkyl, allyl, benzyl, or aryl) as alternate chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals is summarized. Among the benefits of these dichalcogenide synthons are the following: (i) they represent the first and only common precursor type that can function as chalcogen transfer reagents for each of the group VI elements (i.e., to make metal oxide, metal sulfide, metal selenide, and metal telluride nanocrystals); (ii) they possess relatively weak E-E bonds that can be readily cleaved under mild thermolytic or photolytic conditions; and (iii) the organic substituents can be tuned to affect the reactivity. These combined attributes have allowed dichalcogenide precursors to be employed for a wide range of metal chalcogenide nanocrystal syntheses, including those for In2S3, SnxGe1-xSe, SnTe, Cu2-xSySe1-y, ZnSe, CdS, CdSe, MoSe2, WSe2, BiSe, and CuFeS2. Interestingly, a number of metastable phases of compositionally complex

  8. Thermophysical Properties of Selected II-VI Semiconducting Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Su, Ching-Hua; Lehoczky, S. L.; Scripa, R. N.; Ban, H.; Lin, B.

    2004-01-01

    Thermophysical properties are essential for the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the II-VI semiconductor melts are scarce. This paper reports the results of the temperature dependence of melt density, viscosity and electrical conductivity of selected II-VI compounds, including HgTe, HgCdTe and HgZnTe. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. The results were compared with and showed good agreement with the existing data in the literature.

  9. Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation.

    PubMed

    Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

    2016-07-14

    Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness. PMID:27376712

  10. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2014-01-28

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  11. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2011-12-06

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  12. Methods of use of semiconductor nanocrystal probes for treating a material

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2007-04-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  13. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2002-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  14. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2004-03-02

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  15. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  16. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  17. Apparent Versus True Carrier Multiplication Yields in Semiconductor Nanocrystals

    SciTech Connect

    McGuire, John A.; Sykora, Milan; Joo, Jin; Pietryga, Jeffrey M.; Klimov, Victor I.

    2010-05-11

    Generation of multiple electron-hole pairs (excitons) by single photons, known as carrier multiplication (CM), has the potential to appreciably improve the performance of solar photovoltaics. In semiconductor nanocrystals, this effect usually has been detected using a distinct dynamical signature of multiexcitons associated with their fast Auger recombination. Here, we show that uncontrolled photocharging of the nanocrystal core can lead to exaggeration of the Auger decay component and, as a result, significant deviations of the apparent CM efficiencies from their true values. Specifically, we observe that for the same sample, apparent multiexciton yields can differ by a factor of ~3 depending on whether the nanocrystal solution is static or stirred. We show that this discrepancy is consistent with photoinduced charging of the nanocrystals in static solutions, the effect of which is minimized in the stirred case where the charged nanocrystals are swept from the excitation volume between sequential excitation pulses. Using side-by-side measurements of CM efficiencies and nanocrystal charging, we show that the CM results obtained under static conditions converge to the values measured for stirred solutions after we accurately account for the effects of photocharging. This study helps to clarify the recent controversy over CM in nanocrystals and highlights some of the issues that must be carefully considered in spectroscopic studies of this process.

  18. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    SciTech Connect

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and {sup 13}C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution {sup 1}H and {sup 13}C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 {angstrom}. Internal motion is estimated to be slow with a correlation time > 10{sup {minus}8} s{sup {minus}1}. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O{sub 2} and ultraviolet. A method for measuring {sup 14}N-{sup 1}H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T{sub 1} and T{sub 2} experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in {sup 13}C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  19. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    NASA Astrophysics Data System (ADS)

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  20. Nonradiative Auger recombination in semiconductor nanocrystals.

    PubMed

    Vaxenburg, Roman; Rodina, Anna; Shabaev, Andrew; Lifshitz, Efrat; Efros, Alexander L

    2015-03-11

    We calculate the rate of nonradiative Auger recombination in negatively charged CdSe nanocrystals (NCs). The rate is nonmonotonic, strongly oscillating with NC size, and sensitive to the NC surface. The oscillations result in nonexponential decay of carriers in NC ensembles. Using a standard single-exponential approximation of the decay dynamics, we determine the apparent size dependence of the Auger rate in an ensemble and derive CdSe surface parameters consistent with the experimental dependence on size. PMID:25693512

  1. How many electrons make a semiconductor nanocrystal film metallic

    NASA Astrophysics Data System (ADS)

    Reich, Konstantin; Chen, Ting; Kramer, Nicolaas; Fu, Han; Kortshagen, Uwe; Shklovskii, Boris

    For films of semiconductor nanocrystals to achieve their potential as novel, low-cost electronic materials, a better understanding of their doping to tune their conductivity is required. So far, it not known how many dopants will turn a nanocrystal film from semiconducting to metallic. In bulk semiconductors, the critical concentration nM of electrons at the metal-insulator transition is described by the famous Mott criterion: nMaB3 ~= 0 . 02 , where aB is the effective Bohr radius. We show theoretically that in a dense NC film, where NCs touch each other by small facets, the concentration of electrons nc >>nM at the metal-insulator transition satisfies the condition: ncρ3 ~= 0 . 3 , where ρ is a radius of contact facets. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition. This work was supported primarily by the National Science Foundation through the University of Minnesota MRSEC under Award No. DMR-1420013.

  2. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  3. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  4. Excited-State Dynamics in Colloidal Semiconductor Nanocrystals.

    PubMed

    Rabouw, Freddy T; de Mello Donega, Celso

    2016-10-01

    Colloidal semiconductor nanocrystals have attracted continuous worldwide interest over the last three decades owing to their remarkable and unique size- and shape-, dependent properties. The colloidal nature of these nanomaterials allows one to take full advantage of nanoscale effects to tailor their optoelectronic and physical-chemical properties, yielding materials that combine size-, shape-, and composition-dependent properties with easy surface manipulation and solution processing. These features have turned the study of colloidal semiconductor nanocrystals into a dynamic and multidisciplinary research field, with fascinating fundamental challenges and dazzling application prospects. This review focuses on the excited-state dynamics in these intriguing nanomaterials, covering a range of different relaxation mechanisms that span over 15 orders of magnitude, from a few femtoseconds to a few seconds after photoexcitation. In addition to reviewing the state of the art and highlighting the essential concepts in the field, we also discuss the relevance of the different relaxation processes to a number of potential applications, such as photovoltaics and LEDs. The fundamental physical and chemical principles needed to control and understand the properties of colloidal semiconductor nanocrystals are also addressed. PMID:27573500

  5. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  6. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  7. Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors

    SciTech Connect

    Chan, Emory Ming-Yue

    2006-12-19

    Microfluidic reactors are investigated as a mechanism tocontrol the growth of semiconductor nanocrystals and characterize thestructural evolution of colloidal quantum dots. Due to their shortdiffusion lengths, low thermal masses, and predictable fluid dynamics,microfluidic devices can be used to quickly and reproducibly alterreaction conditions such as concentration, temperature, and reactiontime, while allowing for rapid reagent mixing and productcharacterization. These features are particularly useful for colloidalnanocrystal reactions, which scale poorly and are difficult to controland characterize in bulk fluids. To demonstrate the capabilities ofnanoparticle microreactors, a size series of spherical CdSe nanocrystalswas synthesized at high temperature in a continuous-flow, microfabricatedglass reactor. Nanocrystal diameters are reproducibly controlled bysystematically altering reaction parameters such as the temperature,concentration, and reaction time. Microreactors with finer control overtemperature and reagent mixing were designed to synthesize nanoparticlesof different shapes, such as rods, tetrapods, and hollow shells. The twomajor challenges observed with continuous flow reactors are thedeposition of particles on channel walls and the broad distribution ofresidence times that result from laminar flow. To alleviate theseproblems, I designed and fabricated liquid-liquid segmented flowmicroreactors in which the reaction precursors are encapsulated inflowing droplets suspended in an immiscible carrier fluid. The synthesisof CdSe nanocrystals in such microreactors exhibited reduced depositionand residence time distributions while enabling the rapid screening aseries of samples isolated in nL droplets. Microfluidic reactors werealso designed to modify the composition of existing nanocrystals andcharacterize the kinetics of such reactions. The millisecond kinetics ofthe CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured insitu with micro

  8. Characterization of optoelectronic properties of mercury cadmium telluride and zinc oxide II-VI semiconductors for infrared and ultraviolet detector applications

    NASA Astrophysics Data System (ADS)

    Moazzami, Kaveh

    Infrared (IR) and Ultraviolet (UV) light detectors have numerous applications including thermal imaging and chemical and biological spectroscopy. In this work, key aspects of HgCdTe and ZnO semiconductor materials are studied in accordance to their importance to state of the art IR and UV detector technologies. The leading material technology for IR detectors today is the lattice matched HgCdTe alloy. The model for optical absorption in this material has not been reexamined after major improvements in HgCdTe material growth technology. Access to an accurate model for absorption coefficient of this material is important for understanding of detector behavior, where the degree of accuracy required continues to grow as detector structures continue to add complexity. In this work, the optical absorption coefficient of HgCdTe is studied in detail using theoretical bandstructure calculations, temperature dependent optical spectroscopy, and infrared spectroscopic ellipsometry. A new model for the optical absorption coefficient of this material as a function of composition and temperature is presented based on a proposed empirical relationship. A significant improvement in the prediction of photovoltaic detector spectral response is observed based on this proposed model. ZnO is emerging as an important material for short wavelength optoelectronic devices, and may have a major impact on high-performance UV detectors. In this work, the steady-state and time-resolved response of ZnO photoconductors are studied. A sharp turn on is observed in the UV for these photodetectors, corresponding to the bandgap energy of 3.4eV for the ZnO material. Photoconductive decay transients show a fast (nanoseconds) and slow (milliseconds) time constant that are attributed to minority carrier relaxation and trapping processes, respectively. Persistent photoconductivity was observed, with time constant on the order of minutes, in response to both visible and UV excitation and is attributed to

  9. Two-Photon-Pumped Perovskite Semiconductor Nanocrystal Lasers.

    PubMed

    Xu, Yanqing; Chen, Qi; Zhang, Chunfeng; Wang, Rui; Wu, Hua; Zhang, Xiaoyu; Xing, Guichuan; Yu, William W; Wang, Xiaoyong; Zhang, Yu; Xiao, Min

    2016-03-23

    Two-photon-pumped lasers have been regarded as a promising strategy to achieve frequency up-conversion for situations where the condition of phase matching required by conventional approaches cannot be fulfilled. However, their practical applications have been hindered by the lack of materials holding both efficient two-photon absorption and ease of achieving population inversion. Here, we show that this challenge can be tackled by employing colloidal nanocrystals of perovskite semiconductors. We observe highly efficient two-photon absorption (with a cross section of 2.7 × 10(6) GM) in toluene solutions of CsPbBr3 nanocrystals that can excite large optical gain (>500 cm(-1)) in thin films. We have succeeded in demonstrating stable two-photon-pumped lasing at a remarkable low threshold by coupling CsPbBr3 nanocrystals with microtubule resonators. Our findings suggest perovskite nanocrystals can be used as excellent gain medium for high-performance frequency-up-conversion lasers toward practical applications. PMID:26938656

  10. Organic-Inorganic Composites of Semiconductor Nanocrystals for Efficient Excitonics.

    PubMed

    Guzelturk, Burak; Demir, Hilmi Volkan

    2015-06-18

    Nanocomposites of colloidal semiconductor nanocrystals integrated into conjugated polymers are the key to soft-material hybrid optoelectronics, combining advantages of both plastics and particles. Synergic combination of the favorable properties in the hybrids of colloidal nanocrystals and conjugated polymers offers enhanced performance and new functionalities in light-generation and light-harvesting applications, where controlling and mastering the excitonic interactions at the nanoscale are essential. In this Perspective, we highlight and critically consider the excitonic interactions in the organic-inorganic nanocomposites to achieve highly efficient exciton transfer through rational design of the nanocomposites. The use of strong excitonic interactions in optoelectronic devices can trigger efficiency breakthroughs in hybrid optoelectronics. PMID:26266593

  11. Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    1999-01-01

    A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

  12. Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

    SciTech Connect

    White, C.W.; Budai, J.D.; Withrow, S.P.

    1996-09-01

    High-dose ion implantation was used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO{sub 2}, {alpha}-Al{sub 2}O{sub 3}, and crystalline Si. When Si nanocrystals are encapsulated in SiO{sub 2}, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both Group III-V and Group II-VI) can be formed in these matrices by sequential implantation of he individual constituents, and we discuss their synthesis and some of their physical and optical properties.

  13. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations

    SciTech Connect

    Sadtler, Bryce F

    2009-05-01

    Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or

  14. Synthetic Strategies for Semiconductor Nanocrystals Expressing Localized Surface Plasmon Resonance.

    PubMed

    Niezgoda, J Scott; Rosenthal, Sandra J

    2016-03-01

    The field of semiconductor plasmonics has grown rapidly since its outset, only roughly six years ago, and now includes many crystalline substances ranging from GeTe to wide-bandgap transition-metal oxides. One byproduct of this proliferation is the sea of differing synthetic methods to realize localized surface plasmon resonances (LSPRs) based on the studied material. Strategies vary widely from material to material, but all have the common goal of introducing extremely high carrier densities to the semiconductor system. This doping results in tunable, size-quantized, and on/off-switchable LSPR modes, which are a complete departure from traditional metal-nanoparticle-based plasmon resonances. This Minireview will provide an overview of the current state of nanocrystal and quantum-dot plasmonics and the physical basis thereof, however its main purpose is to summarize the methods for realizing LSPRs in the various syntheses and systems that have been reported to date. PMID:26530667

  15. Mapping the exciton diffusion in semiconductor nanocrystal solids.

    PubMed

    Kholmicheva, Natalia; Moroz, Pavel; Bastola, Ebin; Razgoniaeva, Natalia; Bocanegra, Jesus; Shaughnessy, Martin; Porach, Zack; Khon, Dmitriy; Zamkov, Mikhail

    2015-03-24

    Colloidal nanocrystal solids represent an emerging class of functional materials that hold strong promise for device applications. The macroscopic properties of these disordered assemblies are determined by complex trajectories of exciton diffusion processes, which are still poorly understood. Owing to the lack of theoretical insight, experimental strategies for probing the exciton dynamics in quantum dot solids are in great demand. Here, we develop an experimental technique for mapping the motion of excitons in semiconductor nanocrystal films with a subdiffraction spatial sensitivity and a picosecond temporal resolution. This was accomplished by doping PbS nanocrystal solids with metal nanoparticles that force the exciton dissociation at known distances from their birth. The optical signature of the exciton motion was then inferred from the changes in the emission lifetime, which was mapped to the location of exciton quenching sites. By correlating the metal-metal interparticle distance in the film with corresponding changes in the emission lifetime, we could obtain important transport characteristics, including the exciton diffusion length, the number of predissociation hops, the rate of interparticle energy transfer, and the exciton diffusivity. The benefits of this approach to device applications were demonstrated through the use of two representative film morphologies featuring weak and strong interparticle coupling. PMID:25682881

  16. Coherent Acoustic Phonons in Colloidal Semiconductor Nanocrystal Superlattices.

    PubMed

    Poyser, Caroline L; Czerniuk, Thomas; Akimov, Andrey; Diroll, Benjamin T; Gaulding, E Ashley; Salasyuk, Alexey S; Kent, Anthony J; Yakovlev, Dmitri R; Bayer, Manfred; Murray, Christopher B

    2016-01-26

    The phonon properties of films fabricated from colloidal semiconductor nanocrystals play a major role in thermal conductance and electron scattering, which govern the principles for building colloidal-based electronics and optics including thermoelectric devices with a high ZT factor. The key point in understanding the phonon properties is to obtain the strength of the elastic bonds formed by organic ligands connecting the individual nanocrystallites. In the case of very weak bonding, the ligands become the bottleneck for phonon transport between infinitively rigid nanocrystals. In the opposite case of strong bonding, the colloids cannot be considered as infinitively rigid beads and the distortion of the superlattice caused by phonons includes the distortion of the colloids themselves. We use the picosecond acoustics technique to study the acoustic coherent phonons in superlattices of nanometer crystalline CdSe colloids. We observe the quantization of phonons with frequencies up to 30 GHz. The frequencies of quantized phonons depend on the thickness of the colloidal films and possess linear phonon dispersion. The measured speed of sound and corresponding wave modulus in the colloidal films point on the strong elastic coupling provided by organic ligands between colloidal nanocrystals. PMID:26696021

  17. Large area radiation detectors based on II VI thin films

    NASA Astrophysics Data System (ADS)

    Quevedo-Lopez, Manuel

    2015-03-01

    The development of low temperature device technologies that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this talk, our efforts to develop novel CMOS integration schemes, circuits, memory, sensors as well as novel contacts, dielectrics and semiconductors for flexible electronics are presented. In particular, in this presentation we discuss fundamental materials properties including crystalline structure, interfacial reactions, doping, etc. defining performance and reliability of II-VI-based radiation sensors. We investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. Besides II-VI materials, we also evaluated several diode materials, Si, CdTe,GaAs, C (diamond), and ZnO, and two neutron converter materials,10B and 6LiF. We determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  18. Semiconductor-nanocrystals-based white light-emitting diodes.

    PubMed

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z

    2010-08-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white light-emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed. PMID:20602425

  19. Photothermal spectroscopy of II-VI mixed crystals

    NASA Astrophysics Data System (ADS)

    Zakrzewski, Jacek

    2005-09-01

    Wide gap II-VI semiconducting mixed crystals are extensively studied during the past few years as they are promising candidates for applications in construction photo and electrooptical devices operating in blue-green and UV spectral region. The high degree of covalent bonding of Be chalcogenides leads to increase of their lattice rigidity. For this reason, mixing of Be chalcogenides with other wide gap II-VI binary compounds would increase the resistance of the optoelectronic structure to defect generation and propagation. The photoacoustic spectroscopy has been developed to investigate the thermal and optical properties of semiconductors since it is very sensitive and complementary method to the absorption and photoluminescence spectroscopy. The modified Jackson - Amer model is used to interpret the obtained spectra for the piezoelectric photothermal technique. From the amplitude spectra of the piezoelectric signal, the method enables computation of the optical absorption coefficient spectra and estimation of the energy gap values of the investigated samples. It also enables the determination of the thermal diffusivity values of the samples from the analysis of the piezoelectric phase signal. In special cases, the multi-layer model, developed very recently, can be applied for the interpretation of experimental spectra. The influence of the annealing process of II-VI samples in cation vapor on the amplitude photoacoustic spectra in the saturation region is shown and discussed. The values of the parameter η (efficiency of the nonradiative recombination processes) for both, as grown and annealed crystals were determined and discussed.

  20. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    SciTech Connect

    Hamad, K.S.

    2000-05-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  1. Plasma production of nanodevice-grade semiconductor nanocrystals

    SciTech Connect

    Holman, Zachary C.; Kortshagen, Uwe R.

    2011-04-14

    Semiconductor nanocrystals (NCs) offer new opportunities for optical and electronic devices ranging from single-electron transistors to large-area solar cells. Solution synthesis methods cannot reach the temperatures necessary to produce crystalline nanoparticles of covalently bonded materials, and most gas-phase techniques suffer from particle agglomeration and sintering. Nonthermal plasma synthesis, however, can produce high-quality NCs of key materials such as Si and Ge. In this review, we examine the current state and future challenges of the growing field of plasma-synthesized NCs from a device applications perspective. We identify NC microstructure, morphology, ensemble monodispersity, surface chemistry and doping as being vital to the success of next-generation devices, and we discuss research opportunities to understand and control these properties during plasma synthesis.

  2. Activation of shallow dopants in II-VI compounds

    SciTech Connect

    Walukiewicz, W.

    1995-08-01

    The amphoteric native defect model is applied to the understanding of the variations in the dopant activation efficiency in II-VI compounds. It is shown that the location of the common energy reference, the Fermi level stabilization energy, relative to the band edges can be used to determine the doping induced reduction of the formation energy and the enhancement of the concentration of compensating native defects. The model is applied to the most extensively studied compound semiconductors as well as to ternary and quaternary alloys. The effects of the compound ionicity on the dopant activation are briefly discussed.

  3. Cation Exchange Reactions for Improved Quality and Diversity of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Beberwyck, Brandon James

    Observing the size and shape dependent physical properties of semiconductor nanocrystals requires synthetic methods capable of not only composition and crystalline phase control but also molecular scale uniformity for a particle consisting of tens to hundreds of thousands of atoms. The desire for synthetic methods that produce uniform nanocrystals of complex morphologies continues to increase as nanocrystals find roles in commercial applications, such as biolabeling and display technologies, that are simultaneously restricting material compositions. With these constraints, new synthetic strategies that decouple the nanocrystal's chemical composition from its morphology are necessary. This dissertation explores the cation exchange reaction of colloidal semiconductor nanocrystals, a template-based chemical transformation that enables the interconversion of nanocrystals between a variety of compositions while maintaining their size dispersity and morphology. Chapter 1 provides an introduction to the versatility of this replacement reaction as a synthetic method for semiconductor nanocrystals. An overview of the fundamentals of the cation exchange reaction and the diversity of products that are achievable is presented. Chapter 2 examines the optical properties of nanocrystal heterostructures produced through cation exchange reactions. The deleterious impact of exchange on the photoluminescence is correlated to residual impurities and a simple annealing protocol is demonstrated to achieve photoluminescence yields comparable to samples produced by conventional methods. Chapter 3 investigates the extension of the cation exchange reaction beyond ionic nanocrystals. Covalent III-V nanocrystal of high crystallinity and low size dispersity are synthesized by the cation exchange of cadmium pnictide nanocrystals with group 13 ions. Lastly, Chapter 4 highlights future studies to probe cation exchange reactions in colloidal semiconductor nanocrystals and progress that needs to be

  4. Luminescent CdTe and CdSe semiconductor nanocrystals: preparation, optical properties and applications.

    PubMed

    Wang, Ying

    2008-03-01

    The novel optical and electrical properties of luminescent semiconductor nanocrystals are appealing for ultrasensitive multiplexing and multicolor applications in a variety of fields, such as biotechnology, nanoscale electronics, and opto-electronics. Luminescent CdSe and CdTe nanocrystals are archetypes for this dynamic research area and have gained interest from diverse research communities. In this review, we first describe the advances in preparation of size- and shape-controlled CdSe and CdTe semiconductor nanocrystals with the organometallic approach. This article gives particular focus to water soluble nanocrystals due to the increasing interest of using semiconductor nanocrystals for biological applications. Post-synthetic methods to obtain water solubility, the direct synthesis routes in aqueous medium, and the strategies to improve the photoluminescence efficiency in both organic and aqueous phase are discussed. The shape evolution in aqueous medium via self-organization of preformed nanoparticles is a versatile and powerful method for production of nanocrystals with different geometries, and some recent advances in this field are presented with a qualitative discussion on the mechanism. Some examples of CdSe and CdTe nanocrystals that have been applied successfully to problems in biosensing and bioimaging are introduced, which may profoundly impact biological and biomedical research. Finally we present the research on the use of luminescent semiconductor nanocrystals for construction of light emitting diodes, solar cells, and chemical sensors, which demonstrate that they are promising building blocks for next generation electronics. PMID:18468108

  5. Nanocrystals Research for Energy Efficient and Clean Energy Technologies:

    SciTech Connect

    Rosenthal, Sandra J

    2013-12-17

    Efforts centered on: nanocrystal photovoltaic fabrication, ultrafast dynamics and aberration-corrected STEM characterization of II-VI core, core/shell and alloyed nanocrystals, and fundamental investigation and applications of ultrasmall white light-emitting CdSe nanocrystal.

  6. A novel approach for the fabrication of all-inorganic nanocrystal solids: Semiconductor matrix encapsulated nanocrystal arrays

    NASA Astrophysics Data System (ADS)

    Moroz, Pavel

    Growing fossil fuels consumption compels researchers to find new alternative pathways to produce energy. Along with new materials for the conversion of different types of energy into electricity innovative methods for efficient processing of energy sources are also introduced. The main criteria for the success of such materials and methods are the low cost and compelling performance. Among different types of materials semiconductor nanocrystals are considered as promising candidates for the role of the efficient and cheap absorbers for solar energy applications. In addition to the anticipated cost reduction, the integration of nanocrystals (NC) into device architectures is inspired by the possibility of tuning the energy of electrical charges in NCs via nanoparticle size. However, the stability of nanocrystals in photovoltaic devices is limited by the stability of organic ligands which passivate the surface of semiconductors to preserve quantum confinement. The present work introduces a new strategy for low-temperature processing of colloidal nanocrystals into all-inorganic films: semiconductor matrix encapsulated nanocrystal arrays (SMENA). This methodology goes beyond the traditional ligand-interlinking scheme and relies on the encapsulation of morphologically-defined nanocrystal arrays into a matrix of a wide-band gap semiconductor, which preserves optoelectronic properties of individual nanoparticles. Fabricated solids exhibit excellent thermal stability, which is attributed to the heteroepitaxial structure of nanocrystal-matrix interfaces. The main characteristics and properties of these solids were investigated and compared with ones of traditionally fabricated nanocrystal films using standard spectroscopic, optoelectronic and electronic techniques. As a proof of concept, we. We also characterized electron transport phenomena in different types of nanocrystal films using all-optical approach. By measuring excited carrier lifetimes in either ligand-linked or

  7. Second Harmonic Generation and Confined Acoustic Phonons in HighlyExcited Semiconductor Nanocrystals

    SciTech Connect

    Son, Dong Hee; Wittenberg, Joshua S.; Banin, Uri; Alivisatos, A.Paul

    2006-03-30

    The photo-induced enhancement of second harmonic generation, and the effect of nanocrystal shape and pump intensity on confined acoustic phonons in semiconductor nanocrystals, has been investigated with time-resolved scattering and absorption measurements. The second harmonic signal showed a sublinear increase of the second order susceptibility with respect to the pump pulse energy, indicating a reduction of the effective one-electron second-order nonlinearity with increasing electron-hole density in the nanocrystals. The coherent acoustic phonons in spherical and rod-shaped semiconductor nanocrystals were detected in a time-resolved absorption measurement. Both nanocrystal morphologies exhibited oscillatory modulation of the absorption cross section, the frequency of which corresponded to their coherent radial breathing modes. The amplitude of the oscillation also increased with the level of photoexcitation, suggesting an increase in the amplitude of the lattice displacement as well.

  8. ZnTe/MnTe: A new metastable wide gap II VI heterostructure

    NASA Astrophysics Data System (ADS)

    Durbin, S.; Kobayashi, M.; Fu, Qiang; Pelekanos, N.; Gunshor, R. L.; Nurmikko, A. V.

    1990-04-01

    Optical characteristics of a new metastable wide-gap II-VI semiconductor heterostructure ZnTe/MnTe are reported. Single ZnTe/MnTe quantum wells show strong n = 1 exciton resonance manifesting, for example, in pronounced enhancement of the Raman cross-section. Pseudomorphic nature of the structures is inferred from strain induced shifts in the optical phonon spectrum.

  9. Two-dimensional semiconductor nanocrystals: properties, templated formation, and magic-size nanocluster intermediates.

    PubMed

    Wang, Fudong; Wang, Yuanyuan; Liu, Yi-Hsin; Morrison, Paul J; Loomis, Richard A; Buhro, William E

    2015-01-20

    CONSPECTUS: Semiconductor nanocrystals having an extended length dimension and capable of efficiently transporting energy and charge would have useful applications in solar-energy conversion and other emerging technologies. Pseudocylindrical semiconductor nanowires and quantum wires are available that could potentially serve in this role. Sadly, however, their defective surfaces contain significant populations of surface trap sites that preclude efficient transport. The very large surface area of long wires is at least part of the problem. As electrons, holes, and excitons migrate along a nanowire or quantum wire, they are exposed to an extensive surface and to potentially large numbers of trap sites. A solution to this dilemma might be found by identifying "long" semiconductor nanocrystals of other morphologies that are better passivated. In this Account, we discuss a newly emerging family of flat semiconductor nanocrystals that have surprising characteristics. These thin, flat nanocrystals have up to micrometer-scale (orthogonal) lateral dimensions and thus very large surface areas. Even so, their typical photoluminescence efficiencies of 30% are astonishingly high and are 2 orders of magnitude higher than those typical of semiconductor quantum wires. The very sharp emission spectra of the pseudo-two-dimensional nanocrystals reflect a remarkable uniformity in their discrete thicknesses. Evidence that excitons are effectively delocalized and hence transported over the full dimensions of these nanocrystals has been obtained. The excellent optical properties of the flat semiconductor nanocrystals confirm that they are exceptionally well passivated. This Account summarizes the two synthetic methods that have been developed for the preparation of pseudo-two-dimensional semiconductor nanocrystals. A discussion of their structural features accounts for their discrete, uniform thicknesses and details the crystal-lattice expansions and contractions they exhibit. An

  10. Optical Properties of Silicon-Germanium Superlattices and Wide Band Gap II-Vi Superlattices

    NASA Astrophysics Data System (ADS)

    Rajakarunanayake, Yasantha Nirmal

    This thesis presents the investigation of semiconductor heterostructures for optoelectronic applications, with particular emphasis on band alignment considerations, strain effects, band structure calculations and characterization by optical spectroscopy. The first part of this thesis is concerned with the study of novel optoelectronic properties exhibited by Si/Ge superlattices both in the near infrared (interband transitions) and far infrared (intersubband transitions) energy ranges. The second part of this thesis is concerned with establishing the merits of II-VI semiconductor heterostructures for producing visible light emitters, and investigating techniques to improve the dopability of II-VI semiconductors. In the first part of this thesis we investigate the merits of Si/Ge superlattices for optical applications. We show that the optical absorption/emission strengths for interband transitions in Si/Ge superlattices can be enhanced by six orders of magnitude over pure Si or Ge. We also investigate the intersubband absorption coefficients in doped Si/Ge superlattices. Intersubband transitions in these superlattices make them interesting candidates for long-wavelength infrared detectors. In the second part of this thesis, we describe investigations of II-VI semiconductor heterostructures for visible light emitter applications. We experimentally determine the band offsets for CdTe/ZnTe and ZnSe/ZnTe heterojunctions using optical techniques, and remark on the merits of these heterojunctions for carrier injection. We also analyze the role of external electric fields applied during growth in suppressing self-compensation in II-VI semiconductors. Our results indicate that II-VI doping efficiencies can be dramatically improved if substantial electric fields are applied during growth.

  11. Structure-Dependent Spin Polarization in Polymorphic CdS:Y Semiconductor Nanocrystals.

    PubMed

    Wang, Pan; Xiao, Bingxin; Zhao, Rui; Ma, Yanzhang; Zhang, Mingzhe

    2016-03-01

    Searching for the polymorphic semiconductor nanocrystals would provide precise and insightful structure-spin polarization correlations and meaningful guidance for designing and synthesizing high spin-polarized spintronic materials. Herein, the high spin polarization is achieved in polymorphic CdS:Y semiconductor nanocrystals. The high-pressure polymorph of rock-salt CdS:Y nanocrystals has been recovered at ambient conditions synthesized by the wurtzite CdS:Y nanocrystals as starting material under 5.2 GPa and 300 °C conditions. The rock-salt CdS:Y polymorph displays more robust room-temperature ferromagnetism than wurtzite sample, which can reach the ferromagnetic level of conventional semiconductors doped with magnetic transition-metal ions, mainly due to the significantly enhanced spin configuration and defect states. Therefore, crystal structure directly governs the spin configuration, which determines the degree of spin polarization. This work can provide experimental and theoretical methods for designing the high spin-polarized semiconductor nanocrystals, which is important for applications in semiconductor spintronics. PMID:26905093

  12. Nanocrystal structures

    DOEpatents

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2006-12-19

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  13. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    PubMed Central

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  14. Spectroscopic characterization of iron-doped II-VI compounds for laser applications

    NASA Astrophysics Data System (ADS)

    Martinez, Alan

    The middle Infrared (mid-IR) region of the electromagnetic spectrum between 2 and 15 ?m has many features which are of interest to a variety of fields such as molecular spectroscopy, biomedical applications, industrial process control, oil prospecting, free-space communication and defense-related applications. Because of this, there is a demand for broadly tunable, laser sources operating over this spectral region which can be easily and inexpensively produced. II-VI semiconductor materials doped with transition metals (TM) such as Co 2+, Cr2+, or Fe2+ exhibit highly favorable spectroscopic characteristics for mid-IR laser applications. Among these TM dopants, Fe2+ has absorption and emission which extend the farthest into the longer wavelength portion of the mid-IR. Fe2+:II-VI crystals have been utilized as gain elements in laser systems broadly tunable over the 3-5.5 microm range [1] and as saturable absorbers to Q -switch [2] and mode-lock [3] laser cavities operating over the 2.7-3 microm. TM:II-VI laser gain elements can be fabricated inexpensively by means of post-growth thermal diffusion with large homogeneous dopant concentration and good optical quality[4,5]. The work outlined in this dissertation will focus on the spectroscopic characterization of TM-doped II-VI semiconductors. This work can be categorized into three major thrusts: 1) the development of novel laser materials, 2) improving and extending applications of TM:II-VI crystals as saturable absorbers, and 3) fabrication of laser active bulk crystals. Because current laser sources based on TM:II-VI materials do not cover the entire mid-IR spectral region, it is necessary to explore novel laser sources to extend available emissions toward longer wavelengths. The first objective of this dissertation is the spectroscopic characterization of novel ternary host crystals doped with Fe2+ ions. Using crystal field engineering, laser materials can be prepared with emissions placed in spectral regions not

  15. Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties

    NASA Astrophysics Data System (ADS)

    Hegazy, Maroof A.; Abd El-Hameed, Afaf M.

    2014-06-01

    Semiconductor nanocrystals (NC’s) are the materials with dimensions less than 10 nm. When the dimensions of nanocrystals are reduced the bulk bohr diameter, the photo generated electron-hole pair becomes confined and nanocrystal exhibits size dependent upon optical properties. This work is focused on the studying of CdSe semiconductor nanocrystals. These nanocrystals are considered as one of the most widely studies semiconductors because of their size - tunable optical properties from the visible spectrum. CdSe-nanocrystals are produced and obtained throughout the experimental setup initiated at Nano-NRIAG Unit (NNU), which has been constructed and assembled at NRIAG institute. This unit has a specific characterization for preparing chemical compositions, which may be used for solar cell fabrications and space science technology. The materials prepared included cadmium oxide and selinid have sizes ranging between 2.27 nm and 3.75 nm. CdSe-nanocrystals are synthesized in “TOP/TOPO (tri-octyl phosphine/tri-octyl phosphine oxide). Diagnostic tools, include UV analysis, TEM microscope, and X-ray diffraction, which are considered for the analytical studies of the obtained materials. The results show that, in this size regime, the generated particles have unique optical properties, which is achieved from the UV analysis. Also, the TEM image analysis shows the size and shape of the produced particles. These studies are carried out to optimize the photoluminescent efficiency of these nanoparticles. Moreover, the data revealed that, the grain size of nanocrystals is dependent upon the growth time in turn, it leads to a change in the energy gap. Some applications of this class of materials are outlined.

  16. Multiple Exciton Generation in Semiconductor Nanocrystals: Toward Efficient Solar Energy Conversion

    SciTech Connect

    Beard, M. C.; Ellingson, R. J.

    2008-01-01

    Within the range of photon energies illuminating the Earth's surface, absorption of a photon by a conventional photovoltaic semiconductor device results in the production of a single electron-hole pair; energy of a photon in excess of the semiconductor's bandgap is efficiently converted to heat through interactions between the electron and hole with the crystal lattice. Recently, colloidal semiconductor nanocrystals and nanocrystal films have been shown to exhibit efficient multiple electron-hole pair generation from a single photon with energy greater than twice the effective band gap. This multiple carrier pair process, referred to as multiple exciton generation (MEG), represents one route to reducing the thermal loss in semiconductor solar cells and may lead to the development of low cost, high efficiency solar energy devices. We review the current experimental and theoretical understanding of MEG, and provide views to the near-term future for both fundamental research and the development of working devices which exploit MEG.

  17. The Interplay of Shape and Crystalline Anisotropies in Plasmonic Semiconductor Nanocrystals.

    PubMed

    Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; Bergerud, Amy; Milliron, Delia J

    2016-06-01

    Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influence of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. This new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape. PMID:27181287

  18. Chemical and thermodynamic control of the surface of semiconductor nanocrystals for designer white light emitters.

    PubMed

    Krause, Michael M; Mooney, Jonathan; Kambhampati, Patanjali

    2013-07-23

    Small CdSe semiconductor nanocrystals with diameters below 2 nm are thought to emit white light due to random surface defects which result in a broad distribution of midgap emitting states, thereby preventing rational design of small nanocrystal white light emitters. We perform temperature dependent photoluminescence experiments before and after ligand exchange and electron transfer simulations to reveal a very simple microscopic picture of the origin of the white light. These experiments and simulations reveal that these small nanocrystals can be physically modeled in precisely the same way as normal-sized semiconductor nanocrystals; differences in their emission spectra arise from their surface thermodynamics. The white light emission is thus a consequence of the thermodynamic relationship between a core excitonic state and an optically bright surface state with good quantum yield. By virtue of this understanding of the surface and the manner in which it is coupled to the core excitonic states of these nanocrystals, we show both chemical and thermodynamic control of the photoluminescence spectra. We find that using both temperature and appropriate choice in ligands, one can rationally control the spectra so as to engineer the surface to target color rendering coordinates for displays and white light emitters. PMID:23802709

  19. Conjugated polymers/semiconductor nanocrystals hybrid materials--preparation, electrical transport properties and applications.

    PubMed

    Reiss, Peter; Couderc, Elsa; De Girolamo, Julia; Pron, Adam

    2011-02-01

    This critical review discusses specific preparation and characterization methods applied to hybrid materials consisting of π-conjugated polymers (or oligomers) and semiconductor nanocrystals. These materials are of great importance in the quickly growing field of hybrid organic/inorganic electronics since they can serve as active components of photovoltaic cells, light emitting diodes, photodetectors and other devices. The electronic energy levels of the organic and inorganic components of the hybrid can be tuned individually and thin hybrid films can be processed using low cost solution based techniques. However, the interface between the hybrid components and the morphology of the hybrid directly influences the generation, separation and transport of charge carriers and those parameters are not easy to control. Therefore a large variety of different approaches for assembling the building blocks--conjugated polymers and semiconductor nanocrystals--has been developed. They range from their simple blending through various grafting procedures to methods exploiting specific non-covalent interactions between both components, induced by their tailor-made functionalization. In the first part of this review, we discuss the preparation of the building blocks (nanocrystals and polymers) and the strategies for their assembly into hybrid materials' thin films. In the second part, we focus on the charge carriers' generation and their transport within the hybrids. Finally, we summarize the performances of solar cells using conjugated polymer/semiconductor nanocrystals hybrids and give perspectives for future developments. PMID:21152569

  20. Surface plasmon mediated strong exciton-photon coupling in semiconductor nanocrystals.

    PubMed

    Gómez, D E; Vernon, K C; Mulvaney, P; Davis, T J

    2010-01-01

    We present an experimental demonstration of strong coupling between a surface plasmon propagating on a planar silver thin film and the lowest excited state of CdSe nanocrystals. Attenuated total reflection measurements demonstrate the formation of plasmon-exciton mixed states, characterized by a Rabi splitting of approximately 112 meV at room temperature. Such a coherent interaction has the potential for the development of nonlinear plasmonic devices, and furthermore, this system is akin to those studied in cavity quantum electrodynamics, thus offering the possibility to study the regime of strong light-matter coupling in semiconductor nanocrystals under easily accessible experimental conditions. PMID:20000744

  1. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    SciTech Connect

    Nagpal, Prashant; Klimov, Victor I.

    2011-09-27

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.

  2. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vicki L.

    1998-01-01

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed.

  3. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOEpatents

    Alivisatos, A.P.; Colvin, V.L.

    1998-05-12

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed. 10 figs.

  4. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    PubMed Central

    Nagpal, Prashant; Klimov, Victor I.

    2011-01-01

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges. PMID:21952220

  5. A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes.

    PubMed

    Wang, Junli; Yang, Qing

    2008-11-21

    Group III-V (13-15, III = Ga, In, and V = P, As) semiconductor nanocrystals were effectively obtained via a developed Ullmann reaction route through the reactions of preformed nanoscale metallic indium or commercial gallium with triphenylphosphine (PPh(3)) and triphenylarsine (AsPh(3)) in sealed vacuum quartz tubes under moderate conditions at 320-400 degrees C for 8-24 h. The developed synthetic strategy in sealed vacuum tubes extends the synthesis of III-V semiconductor materials, and the air-stable PPh(3) and AsPh(3) with low toxicity provide good alternative pnicogen precursors for the synthesis of III-V nanocrystals. The analysis of XRD, ED and HRTEM established the production of one-dimensional (1D) metastable wurtzite (W) InP, InAs and GaP nanostructures in the zinc blende (ZB) products. Further investigations showed that 1D W nanostructures resulted from kinetic effects under the moderate synthetic conditions employed and the steric effect of PPh(3) and AsPh(3), and that the tendency for the synthesis of III-V nanocrystals was in the orders of IIIP > IIIAs and GaV > InV on the basis of experiments and thermodynamic calculations. Meanwhile, the microstructures and growth mechanism of the III-V nanocrystals were investigated. PMID:19082064

  6. Can Tauc plot extrapolation be used for direct-band-gap semiconductor nanocrystals?

    SciTech Connect

    Feng, Y. Lin, S.; Huang, S.; Shrestha, S.; Conibeer, G.

    2015-03-28

    Despite that Tauc plot extrapolation has been widely adopted for extracting bandgap energies of semiconductors, there is a lack of theoretical support for applying it to nanocrystals. In this paper, direct-allowed optical transitions in semiconductor nanocrystals have been formulated based on a purely theoretical approach. This result reveals a size-dependant transition of the power factor used in Tauc plot, increasing from one half used in the 3D bulk case to one in the 0D case. This size-dependant intermediate value of power factor allows a better extrapolation of measured absorption data. Being a material characterization technique, the generalized Tauc extrapolation gives a more reasonable and accurate acquisition of the intrinsic bandgap, while the unjustified purpose of extrapolating any elevated bandgap caused by quantum confinement is shown to be incorrect.

  7. Novel diffusions of interstitial atoms in II-VI compounds zinc selenide

    NASA Astrophysics Data System (ADS)

    Chen, Li An; Jiang, En Hai; Zhu, Xing Feng; Chen, Ling Fu

    2015-04-01

    The diffusion plays an important role in many applications when the impurities are employed to tune the semiconductor's electrical or optical properties, which make it essential to understand theoretically the microscopic mechanisms governing how dopant defects diffuse. Using first-principles calculations, we compare the diffusion behaviors and migration barriers of interstitial Cu, Ag, and Au atoms in II-VI compounds ZnSe. We consider interstitial diffusion mechanisms and calculate the corresponding activation energies. For noble atoms, we find that the interstitial mediated mechanism is the dominant one. We also find that the relative size of dopant atoms and constituent atoms of II-VI compounds is an important factor affecting the diffusion behaviors. The coupling in ZnSe between Cu d levels and unoccupied host s levels is not as strong as that in CdTe.

  8. Quantifying energy transfer in semiconductor nanocrystals using coherent phonon manipulation and ultrafast spectroscopy (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Spann, Bryan T.; Xu, Xianfan

    2015-10-01

    One potential way to increase photovoltaic efficiency is to take advantage of hot-carriers. Nanocrystal based solar cells aim to take advantage of hot-carrier capture to boost device performance. The crucial parameter for gauging a given nanocrystal material for this application is the electron-phonon coupling. The electron-phonon coupling will dictate the thermalization time of hot-carriers. In this study we demonstrate a method of quantifying the electron-phonon coupling in semiconductor nanocrystals. By employing ultrafast transient absorption spectroscopy with temporal pulse shaping, we manipulate coherent phonons in CdTe_{1-x}Se_{x} nanocrystals to quantify the efficiency of the electron-phonon coupling. The Raman active longitudinal optical phonon (LO) modes were excited and probed as a function of time. Using a temporal pulse shaper, we were able to control pump pulse pairs to coherently excite and cancel coherent phonons in the CdTe_{1-x}Se_{x} nanocrystals, and estimate the relative amount of optical energy that is coupled to the coherent CdSe LO mode which is the dominant thermalization pathway for the hot-electrons in this system.

  9. Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well

    NASA Astrophysics Data System (ADS)

    Achermann, Marc; Petruska, Melissa A.; Kos, Simon; Smith, Darryl L.; Koleske, Daniel D.; Klimov, Victor I.

    2004-06-01

    As a result of quantum-confinement effects, the emission colour of semiconductor nanocrystals can be modified dramatically by simply changing their size. Such spectral tunability, together with large photoluminescence quantum yields and high photostability, make nanocrystals attractive for use in a variety of light-emitting technologies-for example, displays, fluorescence tagging, solid-state lighting and lasers. An important limitation for such applications, however, is the difficulty of achieving electrical pumping, largely due to the presence of an insulating organic capping layer on the nanocrystals. Here, we describe an approach for indirect injection of electron-hole pairs (the electron-hole radiative recombination gives rise to light emission) into nanocrystals by non-contact, non-radiative energy transfer from a proximal quantum well that can in principle be pumped either electrically or optically. Our theoretical and experimental results indicate that this transfer is fast enough to compete with electron-hole recombination in the quantum well, and results in greater than 50 per cent energy-transfer efficiencies in the tested structures. Furthermore, the measured energy-transfer rates are sufficiently large to provide pumping in the stimulated emission regime, indicating the feasibility of nanocrystal-based optical amplifiers and lasers based on this approach.

  10. Particle-level engineering of thermal conductivity in matrix-embedded semiconductor nanocrystals.

    PubMed

    Hannah, Daniel C; Ithurria, Sandrine; Krylova, Galyna; Talapin, Dmitri V; Schatz, George C; Schaller, Richard D

    2012-11-14

    Known manipulations of semiconductor thermal transport properties rely upon higher-order material organization. Here, using time-resolved optical signatures of phonon transport, we demonstrate a "bottom-up" means of controlling thermal outflow in matrix-embedded semiconductor nanocrystals. Growth of an electronically noninteracting ZnS shell on a CdSe core modifies thermalization times by an amount proportional to the overall particle radius. Using this approach, we obtain changes in effective thermal conductivity of up to 5× for a nearly constant energy gap. PMID:23066718

  11. Crystal-Phase Control by Solution-Solid-Solid Growth of II-VI Quantum Wires.

    PubMed

    Wang, Fudong; Buhro, William E

    2016-02-10

    A simple and potentially general means of eliminating the planar defects and phase alternations that typically accompany the growth of semiconductor nanowires by catalyzed methods is reported. Nearly phase-pure, defect-free wurtzite II-VI semiconductor quantum wires are grown from solid rather than liquid catalyst nanoparticles. The solid-catalyst nanoparticles are morphologically stable during growth, which minimizes the spontaneous fluctuations in nucleation barriers between zinc blende and wurtzite phases that are responsible for the defect formation and phase alternations. Growth of single-phase (in our cases the wurtzite phase) nanowires is thus favored. PMID:26731426

  12. Chemical bath deposition of II-VI compound thin films

    NASA Astrophysics Data System (ADS)

    Oladeji, Isaiah Olatunde

    II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice. Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films. In this study, the zinc tetraammine complex ([Zn(NH3) 4]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH3)3]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film

  13. Direct observation of triplet energy transfer from semiconductor nanocrystals.

    PubMed

    Mongin, Cédric; Garakyaraghi, Sofia; Razgoniaeva, Natalia; Zamkov, Mikhail; Castellano, Felix N

    2016-01-22

    Triplet excitons are pervasive in both organic and inorganic semiconductors but generally remain confined to the material in which they originate. We demonstrated by transient absorption spectroscopy that cadmium selenide semiconductor nanoparticles, selectively excited by green light, engage in interfacial Dexter-like triplet-triplet energy transfer with surface-anchored polyaromatic carboxylic acid acceptors, extending the excited-state lifetime by six orders of magnitude. Net triplet energy transfer also occurs from surface acceptors to freely diffusing molecular solutes, further extending the lifetime while sensitizing singlet oxygen in an aerated solution. The successful translation of triplet excitons from semiconductor nanoparticles to the bulk solution implies that such materials are generally effective surrogates for molecular triplets. The nanoparticles could thereby potentially sensitize a range of chemical transformations that are relevant for fields as diverse as optoelectronics, solar energy conversion, and photobiology. PMID:26798011

  14. Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

    SciTech Connect

    Holman, Zachary C.; Liu, Chin-Yi; Kortshagen, Uwe R.

    2010-07-09

    Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm2 V-1 s-1, respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

  15. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  16. 1/f noise in semiconductor and metal nanocrystal solids

    SciTech Connect

    Liu, Heng Lhuillier, Emmanuel Guyot-Sionnest, Philippe

    2014-04-21

    Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.

  17. Charged two-exciton emission from a single semiconductor nanocrystal

    SciTech Connect

    Hu, Fengrui; Zhang, Qiang; Zhang, Chunfeng; Wang, Xiaoyong; Xiao, Min

    2015-03-30

    Here, we study the photoluminescence (PL) time trajectories of single CdSe/ZnS nanocrystals (NCs) as a function of the laser excitation power. At the low laser power, the PL intensity of a single NC switches between the “on” and “off” levels arising from the neutral and positively charged single excitons, respectively. With the increasing laser power, an intermediate “grey” level is formed due to the optical emission from a charged multiexciton state composed of two excitons and an extra electron. Both the inter-photon correlation and the PL decay measurements demonstrate that lifetime-indistinguishable photon pairs are emitted from this negatively charged two-exciton state.

  18. Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

    SciTech Connect

    Sheldon, Matthew T.; Trudeau, Paul-Emile; Mokari, Taleb; Wang, Lin-Wang; Alivisatos, A. Paul

    2009-08-19

    We report a 100,000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-Vis and X-Ray photoelectron spectroscopy indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75percent lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of nanocrystal surface structure for robust device performance and the advantage of this contact method.

  19. Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers.

    SciTech Connect

    Klimov, Victor I.; Koleske, Daniel David; Hoffbauer, Mark A.; Akhadov, Elshan A.; Werder, Donald J.; Mueller, Alexander H.; Petruska, Melissa A.; Achermann, Marc

    2005-06-01

    Numerous technologies including solid-state lighting, displays, and traffic signals can benefit from efficient, color-selectable light sources that are driven electrically. Semiconductor nanocrystals are attractive types of chromophores that combine size-controlled emission colors and high emission efficiencies with excellent photostability and chemical flexibility. Applications of nanocrystals in light-emitting technologies, however, have been significantly hindered by difficulties in achieving direct electrical injection of carriers. Here we report the first successful demonstration of electroluminescence from an all-inorganic, nanocrystal-based architecture in which semiconductor nanocrystals are incorporated into a p-n junction formed from GaN injection layers. The critical step in the fabrication of these nanocrystal/GaN hybrid structures is the use of a novel deposition technique, energetic neutral atom beam lithography/epitaxy, that allows for the encapsulation of nanocrystals within a GaN matrix without adversely affecting either the nanocrystal integrity or its luminescence properties. We demonstrate electroluminescence (injection efficiencies of at least 1%) in both single- and two-color regimes using structures comprising either a single monolayer or a bilayer of nanocrystals.

  20. Broadband up-conversion at subsolar irradiance: triplet-triplet annihilation boosted by fluorescent semiconductor nanocrystals.

    PubMed

    Monguzzi, A; Braga, D; Gandini, M; Holmberg, V C; Kim, D K; Sahu, A; Norris, D J; Meinardi, F

    2014-11-12

    Conventional solar cells exhibit limited efficiencies in part due to their inability to absorb the entire solar spectrum. Sub-band-gap photons are typically lost but could be captured if a material that performs up-conversion, which shifts photon energies higher, is coupled to the device. Recently, molecular chromophores that undergo triplet-triplet annihilation (TTA) have shown promise for efficient up-conversion at low irradiance, suitable for some types of solar cells. However, the molecular systems that have shown the highest up-conversion efficiency to date are ill suited to broadband light harvesting, reducing their applicability. Here we overcome this limitation by combining an organic TTA system with highly fluorescent CdSe semiconductor nanocrystals. Because of their broadband absorption and spectrally narrow, size-tunable fluorescence, the nanocrystals absorb the radiation lost by the TTA chromophores, returning this energy to the up-converter. The resulting nanocrystal-boosted system shows a doubled light-harvesting ability, which allows a green-to-blue conversion efficiency of ∼12.5% under 0.5 suns of incoherent excitation. This record efficiency at subsolar irradiance demonstrates that boosting the TTA by light-emitting nanocrystals can potentially provide a general route for up-conversion for different photovoltaic and photocatalytic applications. PMID:25322197

  1. 3D assembly of silica encapsulated semiconductor nanocrystals.

    PubMed

    Rengers, Christin; Voitekhovich, Sergei V; Kittler, Susann; Wolf, André; Adam, Marion; Gaponik, Nikolai; Kaskel, Stefan; Eychmüller, Alexander

    2015-08-01

    Non-ordered porous networks, so-called aerogels, can be achieved by the 3D assembly of quantum dots (QDs). These materials are well suited for photonic applications, however a certain quenching of the photoluminescence (PL) intensity is observed in these structures. This PL quenching is mainly attributed to the energy transfer mechanisms that result from the close contact of the nanoparticles in the network. Here, we demonstrate the formation of a novel aerogel material with non-quenching PL behaviour by non-classical, reversible gel formation from tetrazole capped silica encapsulated QDs. Monitoring of the gelation/degelation by optical spectroscopy showed that the optical properties of the nanocrystals could be preserved in the 3D network since no spectral shifts and lifetime shortening, which can be attributed to the coupling between QDs, are observed in the gels as compared to the original colloidal solutions. In comparison with other QD-silica monoliths, QDs in our gels are homogeneously distributed with a distinct and controllable distance. In addition we show that the silica shell is porous and allows metal ions to pass through the shell and interact with the QD core causing detectable changes of the emission properties. We further show the applicability of this gelation method to other QD materials which sets the stage for facile preparation of a variety of mixed gel structures. PMID:26154738

  2. Optical phonon modes of III-V nanoparticles and indium phosphide/II-VI core-shell nanoparticles: A Raman and infrared study

    NASA Astrophysics Data System (ADS)

    Manciu, Felicia Speranta

    The prospects for realizing efficient nanoparticle light emitters in the visible/near IR for communications and bio-medical applications have benefited from progress in chemical fabrication of nanoparticles. III-V semiconductor nanopaticles such as GaP and InP are promising materials for the development of "blue" and "green" emitters, respectively, due to their large effective bandgaps. Enhanced emission efficiency has been achieved for core-shell nanoparticles, since inorganic shell materials increase electronic tunability and may decrease surface defects that often occur for nanoparticles capped with organic molecules. Also, the emission wavelength of InP nanoparticle cores can be tuned from green to red by changing the shell material in InP/II-VI core-shell nanoparticles. Investigations of phonon modes in nanocrystals are of both fundamental and applied interest. In the former case the optical phonon modes, such as surface/interface modes, are dependent on the nanoparticle dimensions, and also can provide information about dynamical properties of the nanoparticles and test the validity of various theoretical approaches. In the latter case the vibronic properties of nanoparticle emitters are controlled by confined phonons and modifications of the electron-phonon interaction by the confinement. Thus, the objective of the present thesis is the detailed study of the phonon modes of III-V nanoparticles (GaP and InP) and InP/II-VI core-shell nanoparticles by IR absorption and Raman scattering spectroscopies, and an elucidation of their complex vibrational properties. With the exception of three samples (two GaP and one InP), all samples were synthesized by a novel colloidal chemistry method, which does not requires added surfactant, but rather treatment of the corresponding precursors in octadecene noncoordinative solvent. Sample quality was characterized by ED, TEM and X-ray diffraction. Based on a comparison with a dielectric continuum model, the observed features

  3. 3D assembly of silica encapsulated semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Rengers, Christin; Voitekhovich, Sergei V.; Kittler, Susann; Wolf, André; Adam, Marion; Gaponik, Nikolai; Kaskel, Stefan; Eychmüller, Alexander

    2015-07-01

    Non-ordered porous networks, so-called aerogels, can be achieved by the 3D assembly of quantum dots (QDs). These materials are well suited for photonic applications, however a certain quenching of the photoluminescence (PL) intensity is observed in these structures. This PL quenching is mainly attributed to the energy transfer mechanisms that result from the close contact of the nanoparticles in the network. Here, we demonstrate the formation of a novel aerogel material with non-quenching PL behaviour by non-classical, reversible gel formation from tetrazole capped silica encapsulated QDs. Monitoring of the gelation/degelation by optical spectroscopy showed that the optical properties of the nanocrystals could be preserved in the 3D network since no spectral shifts and lifetime shortening, which can be attributed to the coupling between QDs, are observed in the gels as compared to the original colloidal solutions. In comparison with other QD-silica monoliths, QDs in our gels are homogeneously distributed with a distinct and controllable distance. In addition we show that the silica shell is porous and allows metal ions to pass through the shell and interact with the QD core causing detectable changes of the emission properties. We further show the applicability of this gelation method to other QD materials which sets the stage for facile preparation of a variety of mixed gel structures.Non-ordered porous networks, so-called aerogels, can be achieved by the 3D assembly of quantum dots (QDs). These materials are well suited for photonic applications, however a certain quenching of the photoluminescence (PL) intensity is observed in these structures. This PL quenching is mainly attributed to the energy transfer mechanisms that result from the close contact of the nanoparticles in the network. Here, we demonstrate the formation of a novel aerogel material with non-quenching PL behaviour by non-classical, reversible gel formation from tetrazole capped silica

  4. Universal size dependence of auger constants in direct- and indirect-gap semiconductor nanocrystals

    SciTech Connect

    Robel, Istvan; Schaller, Richard D; Klimov, Victor I; Gresback, Ryan; Kortshagen, Uwe

    2008-01-01

    Three-dimensional (3D) spatial confinement of electronic wave functions in semiconductor nanocrystals (NCs) results in a significant enhancement of multi-electron phenomena including non radiative Auger recombination. In this process, a conduction-band electron recombines with a valence-band hole by transferring the recombination energy to a third carrier. Significant interest in Auger recombination in NCs has been stimulated by recent studies ofNC lasing, and generation-III photovoltaics enabled by carrier multiplication because in both of these prospective applications Auger recombination represents a dominant carrier-loss mechanism. Here, we perform a side-by-side comparison of Auger recombination rates in NCs of several different compositions including Ge, PbSe, InAs, and CdSe. We observe that the only factor, which has a significant effect on the measured recombination rates, is the size of the NCs but not the details of the material's electronic structure. Most surprisingly, comparable rates are measured for nanocrystals of directand indirect-gap semiconductor NCs despite a dramatic four-to-five orders of magnitude difference in respective bulk-semiconductor Auger constants. This unusual observation can be explained by confinement-induced relaxation of momentum conservation, which smears out the difference between direct- and indirect-gap materials.

  5. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Shen, Qihui; Yu, Dongdong; Shi, Weiguang; Li, Jixue; Zhou, Jianguang; Liu, Xiaoyang

    2008-06-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  6. Rational design of the gram-scale synthesis of nearly monodisperse semiconductor nanocrystals

    PubMed Central

    2011-01-01

    We address two aspects of general interest for the chemical synthesis of colloidal semiconductor nanocrystals: (1) the rational design of the synthesis protocol aiming at the optimization of the reaction parameters in a minimum number of experiments; (2) the transfer of the procedure to the gram scale, while maintaining a low size distribution and maximizing the reaction yield. Concerning the first point, the design-of-experiment (DOE) method has been applied to the synthesis of colloidal CdSe nanocrystals. We demonstrate that 16 experiments, analyzed by means of a Taguchi L16 table, are sufficient to optimize the reaction parameters for controlling the mean size of the nanocrystals in a large range while keeping the size distribution narrow (5-10%). The DOE method strongly reduces the number of experiments necessary for the optimization as compared to trial-and-error approaches. Furthermore, the Taguchi table analysis reveals the degree of influence of each reaction parameter investigated (e.g., the nature and concentration of reagents, the solvent, the reaction temperature) and indicates the interactions between them. On the basis of these results, the synthesis has been scaled up by a factor of 20. Using a 2-L batch reactor combined with a high-throughput peristaltic pump, different-sized samples of CdSe nanocrystals with yields of 2-3 g per synthesis have been produced without sacrificing the narrow size distribution. In a similar setup, the gram-scale synthesis of CdSe/CdS/ZnS core/shell/shell nanocrystals exhibiting a fluorescence quantum yield of 81% and excellent resistance of the photoluminescence in presence of a fluorescent quencher (aromatic thiol) has been achieved. PACS: 81.20.Ka, 81.07.Bc, 78.67.Bf PMID:21791060

  7. Phase Diagrams and Electronic Structure of II-VI Alloys

    NASA Astrophysics Data System (ADS)

    de Gironcoli, Stefano

    1998-03-01

    Among II-VI wide-gap semiconductor solid solutions, Zn_xMg_1-xS_ySe_1-y alloy is the most studied for its potential applications in the blue-green light-emitter technology. In spite of this enormous technological interest little is known about its fundamental thermodynamical and structural properties. In this work the structural and thermodynamical properties of the Zn_xMg_1-xS_ySe_1-y solid solutions are determined by a combination of the computational alchemy (S. de Gironcoli, P. Giannozzi, and S. Baroni, Phys. Rev. Lett. 66), 2116 (1991); N. Marzari, S. de Gironcoli, and S. Baroni, Phys. Rev. Lett. 72, 4001 (1994). and the cluster expansion (S.-H. Wei, L. G. Ferreira, and A. Zunger, Phys. Rev. B 41), 8240 (1990). methods with Monte Carlo simulations. We determine the phase diagram of the alloy and show that the system is completely mixible at the tipical growth temperatures and phase separates at lower temperatures into two or three phases. The homogeneous phase is characterized by a large amount of short-range order occurring among first-nearest neighbors. Electronic-structure calculations, performed extending the special quasi-random structures approach (A. Zunger, S.-H. Wei, L. G. Ferreira, and J. E. Bernard, Phys. Rev. Lett. 65), 353 (1990). to the quaternary alloy case, indicate that the energy gap of the alloy is rather sensitive to this short-range order.

  8. Self-assembly of doped semiconductor nanocrystals leading to the formation of highly luminescent nanorods

    NASA Astrophysics Data System (ADS)

    Manzoor, K.; Aditya, V.; Vadera, S. R.; Kumar, N.; Kutty, T. R. N.

    2006-03-01

    Meso-scale self-assembly of doped semiconductor nanocrystals leading to the formation of monocrystalline nanorods showing enhanced photo- and electro-luminescence properties are reported. Polycrystalline ZnS: Cu +-Al 3+ nanoparticles of zinc-blended (cubic) structure with an average size of ˜4 nm were aggregated in aqueous solution and grown into nanorods of length ˜400 nm and aspect ratio ˜12. Transmission electron microscope (TEM) images indicate crystal growth mechanisms involving particle-to-particle oriented-attachment assisted by sulphur-sulphur catenation leading to covalent-linkage. The nanorods exhibit self-assembly dependant luminescence properties such as quenching of the lattice defect-related emissions accompanied by enhancement of dopant-related emission, efficient low-voltage electroluminescence (EL) and super-linear voltage-brightness EL characteristics. This study demonstrates the technological importance of aggregation based self-assembly in doped semiconductor nanosystems.

  9. Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals

    SciTech Connect

    Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

    2006-09-09

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  10. Metal semiconductor phase transition in vanadium dioxide nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez Noriega, Rene

    The goal of this research was to improve the understanding of the submicron VO2 formation in the near surface of a host material and to explore the possibility of size effects in the mechanics of the semiconductor to metal phase transition as well as in the optical properties of VO2. By means of ion implantation and thermal processing, we were able to produce variable-sized nanoscale VO2 precipitates embedded in SiO 2. The transition temperatures were found to be correlated with the size of the precipitates, in such a way that for smaller particles, both transitions were thermally delayed. A review of the energy barriers and other features involved in the transition, led us to conclude that regardless of that exact mechanism, the phase transition must proceed in a heterogeneous fashion. Smaller particles were expected to have a lower chance of containing a nucleation site and thus, they need a greater thermal driving force in order to activate them. VO2 precipitates were not only controlled in size but as an unexpected result they turned out to be produced in elongated shapes oriented mainly along the implanted surface. This morphology, which was explained in terms of the Bravais-Friedel law of crystal growth, allowed us to understand the optical properties of the precipitates. We concluded that the optical behavior shown by the particles in the SiO2 matrix, was result of a surface plasmon resonance due to the dielectric confinement and metallic character of the VO2 in the high temperature phase. Beside these contributions to material and physical sciences, we have shown that established results for VO2 doping can be applicable to our submicron particles. We were able to successfully control the width of the hysteresis loop by adding Ti ions before the precipitation. We also reached lower switching temperatures by implanting small quantities of W. Ion implantation also proved to be an easy and convenient way to incorporate VO2 nanoparticles into an optical fiber

  11. Poly(ethylene glycol)-based multidentate oligomers for biocompatible semiconductor and gold nanocrystals.

    PubMed

    Palui, Goutam; Na, Hyon Bin; Mattoussi, Hedi

    2012-02-01

    We have developed a new set of multifunctional multidentate OligoPEG ligands, each containing a central oligomer on which were laterally grafted several short poly(ethylene glycol) (PEG) moieties appended with either thioctic acid (TA) or terminally reactive groups. Reduction of the TAs (e.g., in the presence of NaBH(4)) provides dihydrolipoic acid (DHLA)-appended oligomers. Here the insertion of PEG segments in the ligand structure promotes water solubility and reduces nonspecific interactions, while TA and DHLA groups provide multidentate anchoring onto Au nanoparticles (AuNPs) and ZnS-overcoated semiconductor quantum dots (QDs), respectively. The synthetic route involves simple coupling chemistry using N,N-dicylohexylcarbodiimide (DCC). Water-soluble QDs and AuNPs capped with these ligands were prepared via cap exchange. As prepared, the nanocrystals dispersions were aggregation-free, homogeneous, and stable for extended periods of time over pH ranging from 2 to 14 and in the presence of excess electrolyte (2 M NaCl). The new OligoPEG ligands also allow easy integration of tunable functional and reactive groups within their structures (e.g., azide or amine), which imparts surface functionalities to the nanocrystals and opens up the possibility of bioconjugation with specific biological molecules. The improved colloidal stability combined with reactivity offer the possibility of using the nanocrystals as biological probes in an array of complex and biologically relevant media. PMID:22201293

  12. Modulated Binary-Ternary Dual Semiconductor Heterostructures.

    PubMed

    Prusty, Gyanaranjan; Guria, Amit K; Mondal, Indranil; Dutta, Anirban; Pal, Ujjwal; Pradhan, Narayan

    2016-02-18

    A generic modular synthetic strategy for the fabrication of a series of binary-ternary group II-VI and group I-III-VI coupled semiconductor nano-heterostructures is reported. Using Ag2 Se nanocrystals first as a catalyst and then as sacrificial seeds, four dual semiconductor heterostructures were designed with similar shapes: CdSe-AgInSe2 , CdSe-AgGaSe2 , ZnSe-AgInSe2 , and ZnSe-AgGaSe2 . Among these, dispersive type-II heterostructures are further explored for photocatalytic hydrogen evolution from water and these are observed to be superior catalysts than the binary or ternary semi-conductors. Details of the chemistry of this modular synthesis have been studied and the photophysical processes involved in catalysis are investigated. PMID:26800297

  13. Theory of exciton linewidth in II VI semiconductor mixed crystals

    NASA Astrophysics Data System (ADS)

    Zimmermann, R.

    1990-04-01

    The disorder-induced broadening of excitons in mixed crystals is discussed, using a novel expression for the relevant exciton volume. Earlier experimental data on CdS 1-xSe x are successfully explained. The exciton broadening in quantum wells due to well-width fluctuations is obtained along similar lines.

  14. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, Shen; Li, Chao; Scripa, R.; Lehoczky, Sandra L.; Kim, Y. W.; Baird, J. K.; Lin, B.; Ban, Heng; Benmore, Chris

    2003-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.

  15. Design of metal/dielectric/nanocrystals core/shell/shell nano-structures for the fluorescence enhancement of cadmium-free semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Chevallier, Théo.; Le Blevennec, Gilles; Chandezon, Frédéric

    2015-10-01

    AgInS2-ZnS (ZAIS) quaternary semiconductors nanocrystals are versatile cadmium-free luminescent nanomaterials. Their broad emission spectrum and strong absorption make them ideal for the development of new white-LED devices taking advantage of nano-optical phenomena. We recently found strategies to increase the photoluminescence quantum yield of ZAIS nanocrystals up to 80%. In a second step toward high efficiency luminescent materials, we aim at increasing the net conversion efficiency of ZAIS nanocrystals by coupling them with metallic nano-antennae. Indeed, by grafting ZAIS nanocrystals onto carefully chosen metal/dielectric core/shell nanoparticles, both the absorption and emission processes can be tuned and enhanced. A finite-element simulation based on the discrete dipole approximation (DDA) was used to predict the nano-optical behavior of silver@oxide@ZAIS nanostructures. Desirable combinations of materials and geometry for the antennae were identified. A chemical method for the synthesis of the simulated nanostructures was developed. The coupling of ZAIS nanocrystals emission with the plasmonic structure is experimentally observed and is in accordance with our predictions.

  16. Polytypic Nanocrystals of Cu-Based Ternary Chalcogenides: Colloidal Synthesis and Photoelectrochemical Properties.

    PubMed

    Wu, Liang; Chen, Shi-You; Fan, Feng-Jia; Zhuang, Tao-Tao; Dai, Chen-Min; Yu, Shu-Hong

    2016-05-01

    Heterocrystalline polytype nanostructured semiconductors have been attracting more and more attention in recent years due to their novel structures and special interfaces. Up to now, controlled polytypic nanostructures are mostly realized in II-VI and III-V semiconductors. Herein, we report the synthesis and photoelectrochemical properties of Cu-based ternary I-III-VI2 chalcogenide polytypic nanocrystals, with a focus on polytypic CuInS2 (CIS), CuInSe2 (CISe), and CuIn(S0.5Se0.5)2 alloy nanocrystals. Each obtained polytypic nanocrystal is constructed with a wurtzite hexagonal column and a zinc blende/chalcopyrite cusp, regardless of the S/Se ratio. The growth mechanisms of polytypic CIS and CISe nanocrystals have been studied by time-dependent experiments. The polytypic nanocrystals are solution-deposited on indium-tin oxide glass substrate and used as a photoelectrode, thus showing stable photoelectrochemical activity in aqueous solution. Density functional theory calculation was used to study the electronic structure and the band gap alignment. This versatile synthetic method provides a new route for synthesis of novel polytypic nanostructured semiconductors with unique properties. PMID:27063512

  17. General low-temperature reaction pathway from precursors to monomers before nucleation of compound semiconductor nanocrystals.

    PubMed

    Yu, Kui; Liu, Xiangyang; Qi, Ting; Yang, Huaqing; Whitfield, Dennis M; Y Chen, Queena; Huisman, Erik J C; Hu, Changwei

    2016-01-01

    Little is known about the molecular pathway to monomers of semiconductor nanocrystals. Here we report a general reaction pathway, which is based on hydrogen-mediated ligand loss for the precursor conversion to 'monomers' at low temperature before nucleation. We apply (31)P nuclear magnetic resonance spectroscopy to monitor the key phosphorous-containing products that evolve from MXn+E=PPh2H+HY mixtures, where MXn, E=PPh2H, and HY are metal precursors, chalcogenide precursors, and additives, respectively. Surprisingly, the phosphorous-containing products detected can be categorized into two groups, Ph2P-Y and Ph2P(E)-Y. On the basis of our experimental and theoretical results, we propose two competing pathways to the formation of M2En monomers, each of which is accompanied by one of the two products. Our study unravels the pathway of precursor evolution into M2En monomers, the stoichiometry of which directly correlates with the atomic composition of the final compound nanocrystals. PMID:27531507

  18. Charge Blinking Statistics of Semiconductor Nanocrystals Revealed by Carbon Nanotube Single Charge Sensors.

    PubMed

    Zbydniewska, Ewa; Duzynska, Anna; Popoff, Michka; Hourlier, Djamila; Lenfant, Stéphane; Judek, Jaroslaw; Zdrojek, Mariusz; Mélin, Thierry

    2015-10-14

    We demonstrate the relation between the optical blinking of colloidal semiconductor nanocrystals (NCs) and their electrical charge blinking for which we provide the first experimental observation of power-law statistics. To show this, we harness the performance of CdSe/ZnS NCs coupled with carbon nanotube field-effect transistors (CNTFETs), which act as single charge-sensitive electrometers with submillisecond time resolution, at room temperature. A random telegraph signal (RTS) associated with the NC single-trap charging is observed and exhibits power-law temporal statistics (τ(-α), with α in the range of ∼1-3), and a Lorentzian current noise power spectrum with a well-defined 1/f(2) corner. The spectroscopic analysis of the NC-CNTFET devices is consistent with the charging of NC defect states with a charging energy of Ec ≥ 200 meV. These results pave the way for a deeper understanding of the physics and technology of nanocrystal-based optoelectronic devices. PMID:26418364

  19. Measurement of accumulation of semiconductor nanocrystal quantum dots by pimephales promelas.

    PubMed

    Leigh, Kenton L; Bouldin, Jennifer L; Buchanan, Roger A

    2012-01-01

    As the production and use of nanomaterials increases, it is important to understand their environmental and biological fate. Because their unmatched chemical, physical, and optical properties make them useful in a wide variety of applications including biomedical imaging, photo-voltaics, and light emitting diodes, the use of semiconductor nanocrystals such as quantum dots (QDs) is increasing rapidly. Although QDs hold great potential in a wide variety of industrial and consumer applications, the environmental implications of these particles is largely unexplored. The nanocrystal core of many types of QDs contains the toxic metal cadmium (Cd), so possible release of Cd from the QD core is cause for concern. Because many types of QDs are miscible in water, QD interactions with aquatic organisms and their environment require more attention. In the present study we used fluorometry to measure time and dose dependent uptake, accumulation, and post-exposure clearance of accumulated QDs in the gut tract by the aquatic vertebrate Pimephales promelas. By using fluorometry, we were able to measure accumulated QD concentrations. To our knowledge, this is the first reported attempt to quantify accumulated QDs in an organism and is an important step in understanding the interactions among QDs in aquatic organisms and environments. PMID:22942867

  20. Measurement of Accumulation of Semiconductor Nanocrystal Quantum Dots by Pimephales Promelas

    PubMed Central

    Leigh, Kenton L.; Bouldin, Jennifer L.; Buchanan, Roger A.

    2012-01-01

    As the production and use of nanomaterials increases, it is important to understand their environmental and biological fate. Because their unmatched chemical, physical, and optical properties make them useful in a wide variety of applications including biomedical imaging, photo-voltaics, and light emitting diodes, the use of semiconductor nanocrystals such as quantum dots (QDs) is increasing rapidly. Although QDs hold great potential in a wide variety of industrial and consumer applications, the environmental implications of these particles is largely unexplored. The nanocrystal core of many types of QDs contains the toxic metal cadmium (Cd), so possible release of Cd from the QD core is cause for concern. Because many types of QDs are miscible in water, QD interactions with aquatic organisms and their environment require more attention. In the present study we used fluorometry to measure time and dose dependent uptake, accumulation, and post-exposure clearance of accumulated QDs in the gut tract by the aquatic vertebrate Pimephales promelas. By using fluorometry, we were able to measure accumulated QD concentrations. To our knowledge, this is the first reported attempt to quantify accumulated QDs in an organism and is an important step in understanding the interactions among QDs in aquatic organisms and environments. PMID:22942867

  1. General low-temperature reaction pathway from precursors to monomers before nucleation of compound semiconductor nanocrystals

    PubMed Central

    Yu, Kui; Liu, Xiangyang; Qi, Ting; Yang, Huaqing; Whitfield, Dennis M.; Y. Chen, Queena; Huisman, Erik J. C.; Hu, Changwei

    2016-01-01

    Little is known about the molecular pathway to monomers of semiconductor nanocrystals. Here we report a general reaction pathway, which is based on hydrogen-mediated ligand loss for the precursor conversion to ‘monomers' at low temperature before nucleation. We apply 31P nuclear magnetic resonance spectroscopy to monitor the key phosphorous-containing products that evolve from MXn+E=PPh2H+HY mixtures, where MXn, E=PPh2H, and HY are metal precursors, chalcogenide precursors, and additives, respectively. Surprisingly, the phosphorous-containing products detected can be categorized into two groups, Ph2P–Y and Ph2P(E)–Y. On the basis of our experimental and theoretical results, we propose two competing pathways to the formation of M2En monomers, each of which is accompanied by one of the two products. Our study unravels the pathway of precursor evolution into M2En monomers, the stoichiometry of which directly correlates with the atomic composition of the final compound nanocrystals. PMID:27531507

  2. Biexciton cascade emission reveals absolute absorption cross section of single semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ihara, Toshiyuki

    2016-06-01

    The sequential two-photon emission process known as biexciton cascade emission is a characteristic phenomenon that occurs in photoexcited semiconductor nanocrystals (NCs). This process occurs when a biexciton state is created in the NCs; thus, the occurrence of the process is related to the photoabsorption properties of the NCs. This paper presents a simple equation that connects the photoabsorption of single NCs and the biexciton cascade emission. The equation is found to be independent of the quantum yields of photoluminescence (PL). With this equation and using an analysis of second-order photon correlation, the absolute absorption cross section σ of the single NCs can be evaluated, obtaining values on the order of 10-14c m2 . This analysis shows that ionization during PL blinking does not affect the validity of the relation, indicating that the evaluation of σ , based on the equation, is applicable for various NCs with unique structures.

  3. Optimizing Two-Color Semiconductor Nanocrystal Immunoassays in Single Well Microtiter Plate Formats

    PubMed Central

    Sapsford, Kim E.; Spindel, Samantha; Jennings, Travis; Tao, Guoliang; Triulzi, Robert C.; Algar, W. Russ; Medintz, Igor L.

    2011-01-01

    The simultaneous detection of two analytes, chicken IgY (IgG) and Staphylococcal enterotoxin B (SEB), in the single well of a 96-well plate is demonstrated using luminescent semiconductor quantum dot nanocrystal (NC) tracers. The NC-labeled antibodies were prepared via sulfhydryl-reactive chemistry using a facile protocol that took <3 h. Dose response curves for each target were evaluated in a single immunoassay format and compared to Cy5, a fluorophore commonly used in fluorescent immunoassays, and found to be equivalent. Immunoassays were then performed in a duplex format, demonstrating multiplex detection in a single well with limits of detection equivalent to the single assay format: 9.8 ng/mL chicken IgG and 7.8 ng/mL SEB. PMID:22164051

  4. The More Exotic Shapes of Semiconductor Nanocrystals: Emerging Applications in Bioimaging.

    PubMed

    Lim, Sung Jun; Smith, Andrew; Nie, Shuming

    2014-05-01

    Semiconductor nanocrystals are tiny fluorescent particles that have recently made a major impact in the biological and medical sciences by enabling high-sensitivity imaging of biomolecules, cells, and tissues. Spherical quantum dots are the prototypical material for these applications but recent synthetic advances have led to a diverse range of nanostructures with controllable sizes, shapes, and materials combinations that offer new dimensions of optical and structural tunability. Uniform anisotropic shapes with linearly polarized light emission allow optical imaging of particle orientation, planar structures have large flexible surfaces and ultra-narrow electronic transitions, and compact nanoparticles have enhanced diffusion in crowded biological environments. These properties are providing unique opportunities to probe basic biological processes, cellular structures, and organismal physiology. PMID:24982823

  5. Linking Semiconductor Nanocrystals into Gel Networks through All-Inorganic Bridges.

    PubMed

    Singh, Amita; Lindquist, Beth A; Ong, Gary K; Jadrich, Ryan B; Singh, Ajay; Ha, Heonjoo; Ellison, Christopher J; Truskett, Thomas M; Milliron, Delia J

    2015-12-01

    For colloidal semiconductor nanocrystals (NCs), replacement of insulating organic capping ligands with chemically diverse inorganic clusters enables the development of functional solids in which adjacent NCs are strongly coupled. Yet controlled assembly methods are lacking to direct the arrangement of charged, inorganic cluster-capped NCs into open networks. Herein, we introduce coordination bonds between the clusters capping the NCs thus linking the NCs into highly open gel networks. As linking cations (Pt(2+)) are added to dilute (under 1 vol %) chalcogenidometallate-capped CdSe NC dispersions, the NCs first form clusters, then gels with viscoelastic properties. The phase behavior of the gels for variable [Pt(2+)] suggests they may represent nanoscale analogues of bridged particle gels, which have been observed to form in certain polymer colloidal suspensions. PMID:26474402

  6. Inelastic Scattering in STEM for Studying Structural and Electronic Properties of Chalcogenide-Based Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gunawan, Aloysius Andhika

    Transmission electron microscopy (TEM) relies upon elastic and inelastic scattering signals to perform imaging and analysis of materials. TEM images typically contain contributions from both types of scattering. The ability to separate the contributions from elastic and inelastic processes individually through energy filter or electron energy loss spectroscopy (EELS) allows unique analysis that is otherwise unachievable. Two prominent types of inelastic scattering probed by EELS, namely plasmon and core-loss excitations, are useful for elucidating structural and electronic properties of chalcogenide-based semiconductor nanocrystals. The elastic scattering, however, is still a critical part of the analysis and used in conjunction with the separated inelastic scattering signals. The capability of TEM operated in scanning mode (STEM) to perform localized atomic length scale analysis also permits the understanding of the nanocrystals unattainable by other techniques. Despite the pivotal role of inelastic scatterings, their contributions for STEM imaging, particularly high-angle annular dark field STEM (HAADF-STEM), are not completely understood. This is not surprising since it is currently impossible to experimentally separate the inelastic signals contributing to HAADF-STEM images although images obtained under bright-field TEM mode can be analyzed separately from their scattering contributions using energy-filtering devices. In order to circumvent such problem, analysis based on simulation was done. The existing TEM image simulation algorithm called Multislice method, however, only accounts for elastic scattering. The existing Multislice algorithm was modified to incorporate (bulk or volume) plasmon inelastic scattering. The results were verified based on data from convergent-beam electron diffraction (CBED), electron energy loss spectroscopy (EELS), and HAADF-STEM imaging as well as comparison to experimental data. Dopant atoms are crucial factors which control

  7. Bioactivation and cell targeting of semiconductor CdSe/ZnS nanocrystals with phytochelatin-related peptides.

    PubMed

    Pinaud, Fabien; King, David; Moore, Hsiao-Ping; Weiss, Shimon

    2004-05-19

    Synthetic phytochelatin-related peptides are used as an organic coat on the surface of colloidal CdSe/ZnS semiconductor nanocrystals synthesized from hydrophobic coordinating trioctyl phosphine oxide (TOPO) solvents. The peptides are designed to bind to the nanocrystals via a C-terminal adhesive domain. This adhesive domain, composed of multiple repeats of cysteines pairs flanked by hydrophobic 3-cyclohexylalanines, is followed by a flexible hydrophilic linker domain to which various bio-affinity tags can be attached. This surface coating chemistry results in small, buffer soluble, monodisperse peptide-coated nanoparticles with high colloidal stability and ensemble photophysical properties similar to those of TOPO-coated nanocrystals. Various peptide coatings are used to modulate the nanocrystal surface properties and to bioactivate the nanoparticles. CdSe/ZnS nanocrystals coated with biotinylated peptides efficiently bind to streptavidin and are specifically targeted to GPI-anchored avidin-CD14 chimeric proteins expressed on the membranes of live HeLa cells. This peptide coating surface chemistry provides a novel approach for the production of biocompatible photoluminescent nanocrystal probes. PMID:15137777

  8. Direct measurement of lattice dynamics and optical phonon excitation in semiconductor nanocrystals using femtosecond stimulated Raman spectroscopy.

    PubMed

    Hannah, Daniel C; Brown, Kristen E; Young, Ryan M; Wasielewski, Michael R; Schatz, George C; Co, Dick T; Schaller, Richard D

    2013-09-01

    We report femtosecond stimulated Raman spectroscopy measurements of lattice dynamics in semiconductor nanocrystals and characterize longitudinal optical (LO) phonon production during confinement-enhanced, ultrafast intraband relaxation. Stimulated Raman signals from unexcited CdSe nanocrystals produce a spectral shape similar to spontaneous Raman signals. Upon photoexcitation, stimulated Raman amplitude decreases owing to experimentally resolved ultrafast phonon generation rates within the lattice. We find a ∼600  fs, particle-size-independent depletion time attributed to hole cooling, evidence of LO-to-acoustic down-conversion, and LO phonon mode softening. PMID:25166708

  9. Threshold in electron-beam end-pumped II-VI lasers

    NASA Astrophysics Data System (ADS)

    Colak, S.; Khurgin, J.; Seemungal, W.; Hebling, A.

    1987-10-01

    Electron-beam end-pumped lasers from different bulk-grown II-VI compounds have been experimentally studied and compared under similar preparation and excitation conditions. The first results on electron-beam pumped CdMnTe lasers and end-pumped CdTe lasers are reported. The order of lowest to highest threshold is found to be from CdSe, ZnCdSe, CdS, CdTe, CdMnTe, and ZnSe. The comparisons between lasing conditions are used to evaluate the contribution of the intrinsic semiconductor parameters to lasing threshold. Experiments with a large number of samples indicate that the influence of intrinsic and extrinsic parameters on lasing threshold are in most cases comparable. Therefore, for most bulk II-VI lasers, the average threshold pump power density reductions with the elimination of extrinsic factors are expected to be less than several times. These findings are further supported by threshold and relative slope efficiency measurements on lasers with different output mirror couplings.

  10. Electrical and optical investigation on doping of II-VI compounds using radioactive isotopes

    NASA Astrophysics Data System (ADS)

    Wienecke, Marion

    2000-12-01

    Using radioactive isotopes of shallow dopants (Ag, As, Rb) as well as of native or isoelectronic elements (Se, Te, Cd, Sr) which were incorporated as host atoms and then transmuted into relevant dopants (transmutation doping) we investigated doping phenomena occurring in the wide band gap II-VI compounds CdTe, ZnTe, ZnSe and SrS by the classical methods of semiconductor physics: Hall effect, C-V and photoluminescence measurements. Thus, we could assign unambiguously defect features in electrical and photoluminescence measurements to extrinsic dopants by means of the half lives of radioactive decay. In As doped ZnSe samples we observed two states: a metastable effective mass like state and a deep state. The occurrence of the latter state is always linked with the high resistivity of As doped ZnSe crystals. The transmutation doping experiments reveal that the so-called self-compensation typical for wide band gab II-VI compounds can be overcome when the thermal treatment for dopant incorporation is time separated from its electrical activation, achieved using transmutation at room temperature. Under these conditions we found an almost one-to-one doping efficiency relative to the implanted dose. Thus, these investigations are a contribution to understanding compensation phenomena occurring due to interactions between dopants and native defects during conventional doping treatments.

  11. Bioinspired solar water splitting, sensitized solar cells, and ultraviolet sensor based on semiconductor nanocrystal antenna/graphene nanoassemblies

    NASA Astrophysics Data System (ADS)

    Chang, Haixin; Lv, Xiaojun; Zheng, Zijian; Wu, Hongkai

    2011-11-01

    Graphene, two-dimensional carbon crystal with only one atom thickness, provides a general platform for nanoscale even atomic scale optoelectronics and photonics. Graphene has many advantages for optoelectronics such as high conductivity, high electronic mobility, flexibility and transparency. However, graphene also has disadvantages such as low light absorption which are unfavorable for optoelectronic devices. On the other hand, many natural photonic systems provide wonderful solution to enhance light absorption for solar energy harvesting and conversion, such as chlorophyll in green plants. Herein, learning from nature, we described bioinspired photocatalytic solar-driven water splitting, sensitized solar cells and ultraviolet optoelectronic sensors enabled by introducing photosensitive semiconductor nanocrystal antenna to graphene for constructing a series of graphene/nanocrystal nanoassemblies. We have demonstrated that high performance optoelectronic devices can come true with the introducing of photosensitive nanocrystal antenna elements.

  12. Bioinspired solar water splitting, sensitized solar cells, and ultraviolet sensor based on semiconductor nanocrystal antenna/graphene nanoassemblies

    NASA Astrophysics Data System (ADS)

    Chang, Haixin; Lv, Xiaojun; Zheng, Zijian; Wu, Hongkai

    2012-02-01

    Graphene, two-dimensional carbon crystal with only one atom thickness, provides a general platform for nanoscale even atomic scale optoelectronics and photonics. Graphene has many advantages for optoelectronics such as high conductivity, high electronic mobility, flexibility and transparency. However, graphene also has disadvantages such as low light absorption which are unfavorable for optoelectronic devices. On the other hand, many natural photonic systems provide wonderful solution to enhance light absorption for solar energy harvesting and conversion, such as chlorophyll in green plants. Herein, learning from nature, we described bioinspired photocatalytic solar-driven water splitting, sensitized solar cells and ultraviolet optoelectronic sensors enabled by introducing photosensitive semiconductor nanocrystal antenna to graphene for constructing a series of graphene/nanocrystal nanoassemblies. We have demonstrated that high performance optoelectronic devices can come true with the introducing of photosensitive nanocrystal antenna elements.

  13. II-VI compounds 1985; Proceedings of the Second International Conference, Aussois, France, March 4-8, 1985

    NASA Astrophysics Data System (ADS)

    Marfaing, Y.; Triboulet, R.; Lunn, B.; Mullin, J. B.

    1985-08-01

    Among the topics considered concerning II-VI compounds are growth of low resistivity high-quality ZnSe, ZnS films by low-pressure metal-organic vapor phase epitaxy growth of Cd(x)Zn(1-x)S, growth of high-purity ZnSe by sublimation traveling-heater method (THM) and the characteristics of the Y and Z deep level emission line, properties of CdTe crystals grown by THM using Cd as the solvent, and liquid-phase epitaxy growth and characterization of 1.3-micron (Hg, Cd)Te layers. Also considered are the self-consistent electronic structure of vacancies in semiconductors, defects in cadmium selenide, luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxy, and photoluminescence of Cd-rich Hg(1-x)Cd(x)Te alloys with x = 0.7-1.0. Additional topics discussed are optically detected magnetic resonance studies of recombination emission in II-VI compounds, X-ray photoemission spectroscopy and magnetotransport studies on the surface of CdHgTe, cadmium mercury telluride infrared detectors, and electron beam-pumped II-VI lasers.

  14. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays.

    PubMed

    Lee, Jong-Soo; Kovalenko, Maksym V; Huang, Jing; Chung, Dae Sung; Talapin, Dmitri V

    2011-06-01

    Flexible, thin-film electronic and optoelectronic devices typically involve a trade-off between performance and fabrication cost. For example, solution-based deposition allows semiconductors to be patterned onto large-area substrates to make solar cells and displays, but the electron mobility in solution-deposited semiconductor layers is much lower than in semiconductors grown at high temperatures from the gas phase. Here, we report band-like electron transport in arrays of colloidal cadmium selenide nanocrystals capped with the molecular metal chalcogenide complex In(2)Se(4)(2-), and measure electron mobilities as high as 16 cm(2) V(-1) s(-1), which is about an order of magnitude higher than in the best solution-processed organic and nanocrystal devices so far. We also use CdSe/CdS core-shell nanoparticles with In(2)Se(4)(2-) ligands to build photodetectors with normalized detectivity D* > 1 × 10(13) Jones (I Jones = 1 cm Hz(1/2) W(-1)), which is a record for II-VI nanocrystals. Our approach does not require high processing temperatures, and can be extended to different nanocrystals and inorganic surface ligands. PMID:21516091

  15. Can high pressure I-II transitions in semiconductors be affected by plastic flow and nanocrystal precipitation in phase I?

    NASA Astrophysics Data System (ADS)

    Weinstein, B. A.; Lindberg, G. P.

    Pressure-Raman spectroscopy in ZnSe and ZnTe single crystals reveals that Se and Te nano-crystals (NCs) precipitate in these II-VI hosts for pressures far below their I-II phase transitions. The inclusions are evident from the appearance and negative pressure-shift of the A1 Raman peaks of Se and Te (trigonal phase). The Se and Te NCs nucleate at dislocations and grain boundaries that arise from pressure-induced plastic flow. This produces chemical and structural inhomogeneities in the zincblende phase of the host. At substantially higher pressures, the I-II transition proceeds in the presence of these inhomogenities. This can affect the transition's onset pressure Pt and width ΔPt, and the occurrence of metastable phases along the transition path. Precipitation models in metals show that nucleation of inclusions depends on the Peierls stress τp and a parameter α related to the net free energy gained on nucleation. For favorable values of τp and α, NC precipitation at pressures below the I-II transition could occur in other compounds. We propose criteria to judge whether this is likely based on the observed ranges of τp in the hosts, and estimates of α derived from the cohesive energy densities of the NC materials. One finds trends that can serve as a useful guide, both to test the proposed criteria, and to decide when closer scrutiny of phase transition experiments is warranted, e.g., in powders where high dislocation densities are initially created

  16. CdSe colloidal nanocrystals monolithically integrated in a pseudomorphic semiconductor epilayer

    SciTech Connect

    Larramendi, Erick M.; Schoeps, Oliver; Woggon, Ulrike; Artemyev, Mikhail V.; Schikora, Detlef; Lischka, Klaus

    2013-01-14

    As optically active emitters in a semiconductor matrix, core/shell and bare CdSe colloidal nanocrystals (CNCs) were monolithically incorporated in ZnSe pseudomorphic epilayers by molecular beam epitaxy (MBE). A suspension of wet chemically synthesized CNCs was sprayed ex-situ over a pseudomorphic ZnSe/GaAs(001) heterostructure using a nebulizer. Subsequently, the matrix material growth was resumed to form a capping layer by a slow MBE growth mode. Structural investigations show high crystalline quality and pseudomorphic epitaxial character of the whole hybrid CNC-matrix structure. The core/shell CNCs remain optically active following the embedding process. Their emission is blue shifted without a significant change on the spectral shape, and shows the same temperature dependence as that of the free exciton peak energy in zinc-blende CdSe at temperatures above 80 K. Our optical characterization of the samples showed that the embedded CNCs were stable and that the structure of the host was preserved. These results are encouraging for the fabrication of more complex optoelectronic devices based on CNCs.

  17. Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Fu, Han; Reich, K. V.; Shklovskii, B. I.

    2016-03-01

    This paper is focused on the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration nc at which it becomes metallic. The hopping conductivity is described by the Efros-Shklovskii law, which depends on the localization length of electrons. We study how the localization length grows with the doping concentration n in the film of touching NCs. For that we calculate the electron transfer matrix element t (n ) between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of t (n ) to the disorder-induced NC level dispersion to find the localization length of electrons due to the multistep elastic co-tunneling process. We found three different phases at n

  18. Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications

    PubMed Central

    2015-01-01

    Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics. By tuning the number of Mn2+ ions per dot from ∼500 to 20 in Mn2+ doped ZnSe nanocrystals (Mn:ZnSe d-dots), the single-exponential PL decay lifetime was continuously tuned from ∼50 to 1000 μs. A synthetic scheme was further developed for uniform and epitaxial growth of thick ZnS shell, ∼7 monolayers. The resulting Mn:ZnSe/ZnS core/shell d-dots were found to be essential for necessary environmental durability of the PL properties, both steady-state and transient ones, for the d-dot emitters. These characteristics combined with intense absorption and high PL quantum yields (70 ± 5%) enabled greatly simplified schemes for various applications of PL lifetime multiplexing using Mn:ZnSe/ZnS core/shell d-dots. PMID:27163024

  19. Contact Radius and the Insulator-Metal Transition in Films Comprised of Touching Semiconductor Nanocrystals.

    PubMed

    Lanigan, Deanna; Thimsen, Elijah

    2016-07-26

    Nanocrystal assemblies are being explored for a number of optoelectronic applications such as transparent conductors, photovoltaic solar cells, and electrochromic windows. Majority carrier transport is important for these applications, yet it remains relatively poorly understood in films comprised of touching nanocrystals. Specifically, the underlying structural parameters expected to determine the transport mechanism have not been fully elucidated. In this report, we demonstrate experimentally that the contact radius, between touching heavily doped ZnO nanocrystals, controls the electron transport mechanism. Spherical nanocrystals are considered, which are connected by a circular area. The radius of this circular area is the contact radius. For nanocrystals that have local majority carrier concentration above the Mott transition, there is a critical contact radius. If the contact radius between nanocrystals is less than the critical value, then the transport mechanism is variable range hopping. If the contact radius is greater than the critical value, the films display behavior consistent with metallic electron transport. PMID:27398597

  20. Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

    PubMed Central

    2012-01-01

    The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ion implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is a 3d6 configuration, which is the same as that in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system. PMID:23009168

  1. The interface effect on the band offset of semiconductor nanocrystals with type-I core-shell structure.

    PubMed

    Zhu, Ziming; Ouyang, Gang; Yang, Guowei

    2013-04-21

    In order to pursue the interface effect on the band offset of the semiconductor nanocrystals with the type-I core-shell structure, we have established a theoretical model to elucidate the underlying mechanism based on the atomic-bond-relaxation consideration and continuum mechanics. It was found that the size-dependent interface bond-nature-factor of the core-shell nanocrystals can be deduced on the basis of the proposed model. Taking the typical CdSe-ZnSe nanostructure as an example, we showed that the theoretical results were consistent with the experimental observations. These investigations provided a useful guide in opening up the possibility to engineer nanodevices with special optoelectronic properties. PMID:23474697

  2. Magnetic Fluorescent Delivery Vehicle using Uniform Mesoporous Silica Spheres Embedded with Monodisperse Magnetic and Semiconductor Nanocrystals

    SciTech Connect

    Kim, Jaeyun; Lee, Ji Eun; Lee, Jinwoo; Yu, Jung Ho; Kim, Byoung Chan; An, Kwangjin; Hwang, Yosun; Shin, Chae-Ho; Park, Je-Geun; Kim, Jungbae; Hyeon, Taeghwan

    2006-01-25

    Uniform sized colloidal nanocrystals have attracted much attention, because of their unique magnetic and optical properties, as compared with those of their bulk counterparts. Especially magnetic nanocrystals and quantum dots have been intensively pursued for biomedical applications such as contrast enhancement agents in magnetic resonance imaging, magnetic carriers for drug delivery system, biological labeling and diagnostics. Due to their large pore sizes and high surface areas, mesoporous materials and its composites with nanocrystals have attracted considerable attention. In order to use the nanocrystals as functional delivery carriers and catalytic supports, nanocrystals coated with porous silica shells are desirable. Herein, we report a synthetic procedure for the fabrication of monodisperse nanocrystals embedded in uniform pore-sized mesoporous silica spheres. As a representative example, we synthesized monodisperse magnetite (Fe3O4) nanocrystals embedded in mesoporous silica spheres and both magnetite nanocrystals and CdSe/ZnS quantum dots embedded in mesoporous silica spheres. Furthermore, these mesoporous silica spheres were applied to the uptake and controlled release of drugs.

  3. II-VI Materials-Based High Performance Intersubband Devices

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind Pawan

    Mid-infrared (mid-IR) light is of vital technological importance because of its application in trace-gas absorption spectroscopy, imaging, free-space communication or infrared countermeasures. Thus the ability to generate and detect mid-IR light at low cost and preferably, at room temperature is of utmost importance. High performance quantum cascade (QC) lasers - mid-IR light sources based on optical transitions in thin quantum wells, and intersubband infrared detectors - namely the quantum well infrared photodetectors (QWIPs) and quantum cascade detectors (QCDs), have rapidly advanced, due to excellent material quality of III-V materials. In spite of this tremendous success, there lie challenges such as lack of efficient short-wavelength emitters or broadband detectors - challenges that arise from intrinsic materials properties. As a central theme in this thesis, we look at a new class of materials, the II-VI based ZnCdSe/ZnCdMgSe system, to close technological gaps and develop high performance infrared light sources and detectors in the entire mid-IR regime. To that end, we first demonstrate the flexibility that the combination of II-VI materials and band structure engineering allows by developing various QWIPs, QCDs and QC emitters at different wavelengths, not easily achieved by other materials. The performance of these first-of-their-kind detectors is already comparable to existing commercial solutions. To fully realize the potential of this new material system, we also developed a room-temperature broadband infrared detector detecting between 3 and 6 mum with record responsivity. With this technology, it is now possible to monolithically integrate high performance mid-IR lasers and detectors for on-chip applications. One of the challenges with all intersubband detectors is that they do not absorb normally incident light, like most conventional detectors. In order to make intersubband detectors attractive to commercial exploration, we develop a novel method to

  4. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  5. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  6. 77 FR 27081 - II-VI, Incorporated, Infrared Optics-Saxonburg Division, Saxonburg, Pennsylvania; Notice of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-08

    ... was published in the Federal Register on February 14, 2012 (77 FR 8281). The workers were engaged in... Employment and Training Administration II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg... former workers of II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg,...

  7. Development of novel II-VI solar cells. Final report

    SciTech Connect

    Tompa, G.S.

    1990-11-01

    The epitaxial growth of novel II-VI solar cell structures was investigated. In Phase I, the metal organic chemical vapor deposition (MOCVD) process parameters and associated growth chemistries for an epitaxial p-i-n, ZnTe/CdTe/GaAs, solar cell structure were developed. No doping was attempted in the Phase I effort. The solar cell structure was grown as a continuous structure within a single process reactor. Film thickness, compositional uniformity, and electrical properties were measured. A test solar cell was not fabricated because the material was too highly resistive to produce a useful solar cell. This high resistivity is characteristic of very pure ZnTe and CdTe material. The feasibility of this structure was demonstrated, providing a foundation for the development of a functional solar cell, by optimizing the cell structure and growth processes and by developing doping techniques.

  8. Protein-Nanoreactor-Assisted Synthesis of Semiconductor Nanocrystals for Efficient Cancer Theranostics.

    PubMed

    Yang, Tao; Wang, Yong; Ke, Hengte; Wang, Qiaoli; Lv, Xiaoyan; Wu, Hong; Tang, Yongan; Yang, Xiangliang; Chen, Chunying; Zhao, Yuliang; Chen, Huabing

    2016-07-01

    Transition metal sulfide nanocrystals are developed as a theranostic platform through the protein-nanoreactor approach with facile functionalization for multimodal NIRF/PA/SPECT/CT imaging and photothermal tumor ablation. PMID:27165472

  9. Carrier multiplication in semiconductor nanocrystals: influence of size, shape, and composition.

    PubMed

    Padilha, Lazaro A; Stewart, John T; Sandberg, Richard L; Bae, Wan Ki; Koh, Weon-Kyu; Pietryga, Jeffrey M; Klimov, Victor I

    2013-06-18

    During carrier multiplication (CM), also known as multiexciton generation (MEG), absorption of a single photon produces multiple electron-hole pairs, or excitons. This process can appreciably increase the efficiency of photoconversion, which is especially beneficial in photocatalysis and photovoltaics. This Account reviews recent progress in understanding the CM process in semiconductor nanocrystals (NCs), motivated by the challenge researchers face to quickly identify candidate nanomaterials with enhanced CM. We present a possible solution to this problem by showing that, using measured biexciton Auger lifetimes and intraband relaxation rates as surrogates for, respectively, CM time constants and non-CM energy-loss rates, we can predict relative changes in CM yields as a function of composition. Indeed, by studying PbS, PbSe, and PbTe NCs of a variety of sizes we determine that the significant difference in CM yields for these compounds comes from the dissimilarities in their non-CM relaxation channels, i.e., the processes that compete with CM. This finding is likely general, as previous observations of a material-independent, "universal" volume-scaling of Auger lifetimes suggest that the timescale of the CM process itself is only weakly affected by NC composition. We further explore the role of nanostructure shape in the CM process. We observe that a moderate elongation (aspect ratio of 6-7) of PbSe NCs can cause up to an approximately two-fold increase in the multiexciton yield compared to spherical nanoparticles. The increased Auger lifetimes and improved charge transport properties generally associated with elongated nanostructures suggest that lead chalcogenide nanorods are a promising system for testing CM concepts in practical photovoltaics. Historically, experimental considerations have been an important factor influencing CM studies. To this end, we discuss the role of NC photocharging in CM measurements. Photocharging can distort multiexciton dynamics

  10. Stability study of PbSe semiconductor nanocrystals over concentration, size, atmosphere, and light exposure.

    PubMed

    Dai, Quanqin; Wang, Yingnan; Zhang, Yu; Li, Xinbi; Li, Ruowang; Zou, Bo; Seo, JaeTae; Wang, Yiding; Liu, Manhong; Yu, William W

    2009-10-20

    Infrared-emitting PbSe nanocrystals are of increasing interest in both fundamental research and technical application. However, the practical applications are greatly limited by their poor stability. In this work, absorption and photoluminescence spectra of PbSe nanocrystals were utilized to observe the stability of PbSe nanocrystals over several conventional factors, that is, particle concentration, particle size, temperature, light exposure, contacting atmosphere, and storage forms (solution or solid powder). Both absorption and luminescence spectra of PbSe nanocrystals exposed to air showed dependence on particle concentration, size, and light exposure, which caused large and quick blue-shifts in the optical spectra. This air-contacted instability arising from the destructive oxidation and subsequent collision-induced decomposition was kinetically dominated and differed from the traditional thought that smaller particles with lower concentrations shrank fast. The photoluminescence emission intensity of the PbSe nanocrystal solution under ultraviolet (UV) exposure in air increased first and then decreased slowly; without UV irradiation, the emission intensity monotonously decreased over time. However, if stored under nitrogen, no obvious changes in absorption and photoluminescence spectra of the PbSe nanocrystals were observed even under UV exposure or upon being heated up to 100 degrees C. PMID:19522486

  11. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  12. Determination of Concentration of Amphiphilic Polymer Molecules on the Surface of Encapsulated Semiconductor Nanocrystals.

    PubMed

    Fedosyuk, Aleksandra; Radchanka, Aliaksandra; Antanovich, Artsiom; Prudnikau, Anatol; Kvach, Maksim V; Shmanai, Vadim; Artemyev, Mikhail

    2016-03-01

    We present a method for the determination of the average number of polymer molecules on the surface of A(II)B(VI) luminescent core-shell nanocrystals (CdSe/ZnS, ZnSe/ZnS quantum dots, and CdS/ZnS nanorods) encapsulated with amphiphilic polymer. Poly(maleic anhydride-alt-1-tetradecene) (PMAT) was quantitatively labeled with amino-derivative of fluorescein and the average amount of PMAT molecules per single nanocrystal was determined using optical absorption of the dye in the visible spectral range. The average amount of PMAT molecules grows linearly with the surface area of all studied nanocrystals. However, the surface density of the monomer units increases nonlinearly with the surface area, because of the increased competition between PMAT molecules for Zn-hexanethiol surface binding sites. The average value of zeta potential (ζ = -35 mV) was found to be independent of the size, shape, and chemical composition of nanocrystals at fixed buffer parameters (carbonate-bicarbonate buffer, pH 9.5 and 5 mM ionic strength). This finding is expected to be useful for the determination of the surface density of remaining carboxyl groups in PMAT-encapsulated nanocrystals. PMID:26866303

  13. General Strategy for Enhancing Electrochemiluminescence of Semiconductor Nanocrystals by Hydrogen Peroxide and Potassium Persulfate as Dual Coreactants.

    PubMed

    Dai, Pan-Pan; Yu, Tao; Shi, Hai-Wei; Xu, Jing-Juan; Chen, Hong-Yuan

    2015-12-15

    Semiconductor nanocrystals usually suffer from weak electrogenerated chemiluminescence (ECL) emissions compared with conventional organic emitters. In this work, we propose, for the first time, a very convenient but effective way to greatly enhance ECL emission of semiconductor TiO2 nanotubes (NTs) by H2O2 and K2S2O8 as dual coreactants, generating ECL emission ca. 6.3 and 107 times stronger than that of K2S2O8 or H2O2 as an individual coreactant, respectively. Scanning electron microscopy, X-ray diffraction, and electron paramagnetic resonance spectral studies were carried out to investigate the ECL enhancement mechanism. The ECL enhancement of TiO2 NTs by the K2S2O8-H2O2 system was supposed to originate from the coordination of H2O2 to the TiO2 surface and the synergy effect between H2O2 and K2S2O8 in the ECL process. The coordination of H2O2 to the surface of TiO2 could stabilize the electrogenerated coreactant-related radical OH(•) (hydroxyl radical), which could obviously promote the amount of sulfate radical anion (SO4(•-)) near the electrode surface by inducing decomposition of K2S2O8 into SO4(•-) or inhibiting the consumption of SO4(•-) by its reaction with H2O. The holes (h(+)) released from SO4(•-) were injected into the valence band of TiO2, resulting in more TiO2(+), which combined with the electrons coming from the conduction band with an enhanced light emission. Moreover, this enhancement effect was also applicable to ECL of a CdS nanocrystal film on a glass carbon electrode, with ca. 2.74- and 148.3-fold enhanced ECL intensity correspondingly, indicating wide applications in the development of semiconductor nanocrystal-based ECL biosensors. PMID:26564425

  14. Multi-crystalline II-VI based multijunction solar cells and modules

    SciTech Connect

    Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

    2015-06-30

    Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

  15. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine.

    PubMed

    Joung, Somyoung; Yoon, Sungwoo; Han, Chang-Soo; Kim, Youngjo; Jeong, Sohee

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

  16. Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris( tert-butyldimethylsilyl)phosphine

    NASA Astrophysics Data System (ADS)

    Joung, Somyoung; Yoon, Sungwoo; Han, Chang-Soo; Kim, Youngjo; Jeong, Sohee

    2012-01-01

    Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots.

  17. Detection Techniques for Biomolecules using Semi-Conductor Nanocrystals and Magnetic Beads as Labels

    NASA Astrophysics Data System (ADS)

    Chatterjee, Esha

    Continued interest in the development of miniaturized and portable analytical platforms necessitates the exploration of sensitive methods for the detection of trace analytes. Nanomaterials, on account of their unique physical and chemical properties, are not only able to overcome many limitations of traditional detection reagents but also enable the exploration of many new signal transduction technologies. This dissertation presents a series of investigations of alternative detection techniques for biomolecules, involving the use of semi-conductor nanocrystals and magnetic beads as labels. Initial research focused on the development of quantum dot-encapsulating liposomes as a novel fluorescent label for immunoassays. This hybrid nanomaterial was anticipated to overcome the drawbacks presented by traditional fluorophores as well as provide significant signal amplification. Quantum dot-encapsulating liposomes were synthesized by the method of thin film hydration and characterized. The utility of these composite nanostructures for bioanalysis was demonstrated. However, the longterm instability of the liposomes hampered quantitative development. A second approach for assay development exploited the ability of gold nanoparticles to quench the optical signals obtained from quantum dots. The goal of this study was to demonstrate the feasibility of using aptamer-linked nanostructures in FRET-based quenching for the detection of proteins. Thrombin was used as the model analyte in this study. Experimental parameters for the assay were optimized. The assay simply required the mixing of the sample with the reagents and could be completed in less than an hour. The limit of detection for thrombin by this method was 5 nM. This homogeneous assay can be easily adapted for the detection of a wide variety of biochemicals. The novel technique of ferromagnetic resonance generated in magnetic bead labels was explored for signal transduction. This inductive detection technique lends

  18. Quantum dot sensitized solar cells. A tale of two semiconductor nanocrystals: CdSe and CdTe.

    PubMed

    Bang, Jin Ho; Kamat, Prashant V

    2009-06-23

    CdSe and CdTe nanocrystals are linked to nanostructured TiO2 films using 3-mercaptopropionic acid as a linker molecule for establishing the mechanistic aspects of interfacial charge transfer processes. Both these quantum dots are energetically capable of sensitizing TiO2 films and generating photocurrents in quantum dot solar cells. These two semiconductor nanocrystals exhibit markedly different external quantum efficiencies ( approximately 70% for CdSe and approximately 0.1% for CdTe at 555 nm). Although CdTe with a more favorable conduction band energy (E(CB) = -1.0 V vs NHE) is capable of injecting electrons into TiO2 faster than CdSe (E(CB) = -0.6 V vs NHE), hole scavenging by a sulfide redox couple remains a major bottleneck. The sulfide ions dissolved in aqueous solutions are capable of scavenging photogenerated holes in photoirradiated CdSe system but not in CdTe. The anodic corrosion and exchange of Te with S dominate the charge transfer at the CdTe interface. Factors that dictate the efficiency and photostability of CdSe and CdTe quantum dots are discussed. PMID:19435373

  19. Equilibrium composition in II?VI telluride MOCVD systems

    NASA Astrophysics Data System (ADS)

    Ben-Dor, L.; Greenberg, J. H.

    1999-03-01

    Thermodynamic calculations, or computer simulation of the equilibrium composition, offer an excellent possibility to reduce drastically the elaborate trial-and-error experimental efforts of finding the optimal preparation conditions for MOCVD processes (temperature T, pressure P, initial composition of the vapors X), to limit them only to the P- T- X field of existence of the solid to be prepared and an acceptable yield of the product. In this communication equilibrium composition was investigated for MOCVD processes of CdTe, ZnTe, HgTe and solid solutions Cd xZn 1- xTe and Hg xCd 1- xTe. A number of volatile organometallic compounds have been used as precursors for MOCVD growth. These are dimethylcadmium (CH 3) 2Cd, DMCd; diethylzinc (C 2H 5) 2Zn, DEZn; diisopropylzinc [CH(CH 3) 2] 2Zn, DiPZn; diethyltellurium (C 2H 5) 2Te, DETe; diisopropyltellurium [CH(CH 3) 2] 2Te, DiPTe; methylallyltellurium CH 3TeCH 2CHCH 2, MATe. A choice of the particular combination of the precursors largely depends on the desired composition of the film to be prepared, especially in cases of solid solutions Cd xZn 1- xTe and Hg xCd 1- xTe where the vapor pressure of the precursors is instrumental for the composition of the vapor in the reaction zone and, ultimately, for the composition x of the solid solution. Equilibrium composition for II-VI telluride MOCVD systems was investigated at temperatures up to 873 K in hydrogen and inert gas atmospheres at pressures up to 1 atm. P- T- X regions of existence were outlined for each of the five materials.

  20. Measuring and Predicting the Internal Structure of Semiconductor Nanocrystals through Raman Spectroscopy.

    PubMed

    Mukherjee, Prabuddha; Lim, Sung Jun; Wrobel, Tomasz P; Bhargava, Rohit; Smith, Andrew M

    2016-08-31

    Nanocrystals composed of mixed chemical domains have diverse properties that are driving their integration in next-generation electronics, light sources, and biosensors. However, the precise spatial distribution of elements within these particles is difficult to measure and control, yet profoundly impacts their quality and performance. Here we synthesized a unique series of 42 different quantum dot nanocrystals, composed of two chemical domains (CdS:CdSe), arranged in 7 alloy and (core)shell structural classes. Chemometric analyses of far-field Raman spectra accurately classified their internal structures from their vibrational signatures. These classifications provide direct insight into the elemental arrangement of the alloy as well as an independent prediction of fluorescence quantum yield. This nondestructive, rapid approach can be broadly applied to greatly enhance our capacity to measure, predict and monitor multicomponent nanomaterials for precise tuning of their structures and properties. PMID:27472011

  1. Crafting semiconductor organic-inorganic nanocomposites via placing conjugated polymers in intimate contact with nanocrystals for hybrid solar cells.

    PubMed

    Zhao, Lei; Lin, Zhiqun

    2012-08-22

    Semiconductor organic-inorganic hybrid solar cells incorporating conjugated polymers (CPs) and nanocrystals (NCs) offer the potential to deliver efficient energy conversion with low-cost fabrication. The CP-based photovoltaic devices are complimented by an extensive set of advantageous characteristics from CPs and NCs, such as lightweight, flexibility, and solution-processability of CPs, combined with high electron mobility and size-dependent optical properties of NCs. Recent research has witnessed rapid advances in an emerging field of directly tethering CPs on the NC surface to yield an intimately contacted CP-NC nanocomposite possessing a well-defined interface that markedly promotes the dispersion of NCs within the CP matrix, facilitates the photoinduced charge transfer between these two semiconductor components, and provides an effective platform for studying the interfacial charge separation and transport. In this Review, we aim to highlight the recent developments in CP-NC nanocomposite materials, critically examine the viable preparative strategies geared to craft intimate CP-NC nanocomposites and their photovoltaic performance in hybrid solar cells, and finally provide an outlook for future directions of this extraordinarily rich field. PMID:22761026

  2. Luminescence properties of ZnS:Cu, Eu semiconductor nanocrystals synthesized by a hydrothermal process

    NASA Astrophysics Data System (ADS)

    Xin, Mei; Hu, Li-Zhong

    2013-08-01

    ZnS:Cu, Eu nanocrystals with an average diameter of ~ 80 nm are synthesized using a hydrothermal approach at 200 °C. The photoluminescence (PL) properties of the ZnS:Cu, Eu nanocrystals before and after annealing, as well as the doping form of Eu, are studied. The as-synthesized samples are characterized by X-ray diffraction, scanning electron microscopy, inductively coupled plasma-atomic emission spectrometry, and the excitation and emission spectra (PL). The results show that both Cu and Eu are indeed incorporated into the ZnS matrix. Compared with the PL spectrum of the Cu mono-doped sample, the PL emission intensity of the Cu and Eu-codoped sample increases and a peak appears at 516 nm, indicating that Eu3+ ions, which act as an impurity compensator and activator, are incorporated into the ZnS matrix, forming a donor level. Compared with the unannealed sample, the annealed one has an increased PL emission intensity and the peak position has a blue shift of 56 nm from 516 nm to 460 nm, which means that Eu3+ ions reduce to Eu2+ ions, thereby leading to the appearance of Eu2+ characteristic emission and generating effective host-to-Eu2+ energy transfer. The results indicate the potential applications of ZnS:Cu, Eu nanoparticles in optoelectronic devices.

  3. Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode

    SciTech Connect

    Song Tao; Shen Xiaojuan; Sun Baoquan; Zhang Fute; Zhang Xiaohong; Zhu Xiulin

    2009-12-07

    We demonstrate the fabrication of light-emitting diodes (LEDs) made from all-inorganic colloidal semiconducting nanocrystals (NCs). The diode utilizes a sandwich structure formed by placing CdSe/CdS NCs between two layers of Si and Ag{sub x}O, which act as electron- and hole-transporting materials, respectively. The photoluminescence properties of NCs are rendered less dependent upon surface chemistry and chemical environment by growing a thick CdS shell. It also enhances stability of the NCs during the process of magnetron sputtering for silicon deposition. The resulting LED device exhibits a low turn-on voltage of 2.5 V and the maximum external quantum efficiency of nearly 0.08%.

  4. Robust photogeneration of H2 in water using semiconductor nanocrystals and a nickel catalyst.

    PubMed

    Han, Zhiji; Qiu, Fen; Eisenberg, Richard; Holland, Patrick L; Krauss, Todd D

    2012-12-01

    Homogeneous systems for light-driven reduction of protons to H(2) typically suffer from short lifetimes because of decomposition of the light-absorbing molecule. We report a robust and highly active system for solar hydrogen generation in water that uses CdSe nanocrystals capped with dihydrolipoic acid (DHLA) as the light absorber and a soluble Ni(2+)-DHLA catalyst for proton reduction with ascorbic acid as an electron donor at pH = 4.5, which gives >600,000 turnovers. Under appropriate conditions, the precious-metal-free system has undiminished activity for at least 360 hours under illumination at 520 nanometers and achieves quantum yields in water of over 36%. PMID:23138979

  5. Protective ligand shells for luminescent SiO₂-coated alloyed semiconductor nanocrystals.

    PubMed

    Acebrón, María; Galisteo-López, Juan F; Granados, Daniel; López-Ogalla, Javier; Gallego, José M; Otero, Roberto; López, Cefe; Juárez, Beatriz H

    2015-04-01

    SiO2 encapsulation of alloyed CdSeZnS nanocrystals (NCs) shows differences in terms of optical properties and luminescence quantum yield, depending on the surface composition, size, and ligand content. In this work, emphasis has been placed on the fine control required to obtain luminescent SiO2 encapsulated NCs by studying the role of oleic acid (OA), stearic acid (SA), and dodecanethiol (DDT) ligands on the alloyed NCs. While the use of anchored DDT molecules is essential to preserve the optical properties, intercalated OA and SA play a critical role for SiO2 nucleation, as stated by (1)H NMR (including DOSY and NOESY) spectroscopy. These results emphasize the importance of surface chemistry in NCs; it is crucial to control their reactivity, and therefore their impact, in different applications, from optics to biomedicine. PMID:25756519

  6. Nonlinear optical response of semiconductor-nanocrystals-embedded photonic band gap structure

    SciTech Connect

    Liao, Chen; Zhang, Huichao; Tang, Luping; Zhou, Zhiqiang; Lv, Changgui; Cui, Yiping; Zhang, Jiayu

    2014-04-28

    Colloidal CdSe/ZnS core/shell nanocrystals (NCs), which were dispersed in SiO{sub 2} sol, were utilized to fabricate a SiO{sub 2}:NCs/TiO{sub 2} all-dielectric photonic band gap (PBG) structure. The third-order nonlinear refractive index (n{sub 2}) of the PBG structure was nearly triple of that of the SiO{sub 2}:NCs film due to the local field enhancement in the PBG structure. The photoinduced change in refractive index (Δn) could shift the PBG band edge, so the PBG structure would show significant transmission modification, whose transmission change was ∼17 folds of that of the SiO{sub 2}:NCs film. Under excitation of a 30 GW/cm{sup 2} femtosecond laser beam, a transmission decrease of 80% was realized.

  7. The formation of molecular aggregates of sulfophthalocyanine in complexes with semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Dadadzhanov, D. R.; Martynenko, I. V.; Orlova, A. O.; Maslov, V. G.; Fedorov, A. V.; Baranov, A. V.

    2015-11-01

    In this study, complexes of CdSe/ZnS quantum dots and quantum rods with sulfophthalocyanine molecules have been formed. Analysis of spectral and luminescent properties of solutions of the complexes has revealed that an increase in the number of molecules per one nanocrystal in a mixed solution results in a noticeable decrease in the intensity of the luminescence of the quantum dots and quantum rods. In addition, it has been found that, upon an increase in the concentration of sulfophthalocyanine molecules, the absorption spectra of the samples in the region of their first absorption band have signs of formation of nonluminiscent aggregates of sulfophthalocyanine molecules. Analysis of the absorption spectra of the mixed solutions has made it possible to demonstrate that the complexes with the quantum rods have a content of the sulfophthalocyanine aggregates significantly lower than the complexes with the quantum dots.

  8. Symmetry breaking in semiconductor nanocrystals via kinetic-controlled surface diffusion: a strategy for manipulating the junction structure.

    PubMed

    Wang, Xixi; Liu, Maochang; Chen, Yubin; Fu, Wenlong; Wang, Bin; Guo, Liejin

    2016-09-21

    The synthesis of semiconductor nanocrystals is usually limited to high-level symmetry, as constrained by the inherent, for example, face-centered cubic or hexagonal close-packed lattices of the crystals. Herein, we report a robust approach for breaking the symmetry of the CdS lattice and obtaining high-quality CdS ultrathin monopods, bipods, tripods, and tetrapods. The success relies on manipulating reaction kinetics by dropwise addition of a precursor solution, which permits deterministic control over the number of CdS monomers in the reaction solution. With rapid monomer supply by fast precursor injection, growth was restricted to only one {111} facet of the nascent CdS tetrahedron to produce an asymmetric ultrathin monopod (a zinc-blende tip with a wurtzite arm). Otherwise, growth monomers could access adjacent {111} facets through surface diffusion and thus lead to the switch of the growth pattern from asymmetric to symmetric to generate an ultrathin multipod (a zinc-blende tip/core with multi-wurtzite arms). These symmetry-controlled photocatalysts were characterized by a fine-tuned zinc blende-wurtzite intergrowth type-II homojunction. After evaluating their structure-dependent solar-hydrogen-production properties, the CdS ultrathin monopod with an appropriate length for controllable charge transportation showed the highest photocatalytic activity. PMID:27539367

  9. Theoretical study on ultrafast dynamics of coherent acoustic phonons in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Huang, Tongyun; Han, Peng; Wang, Xinke; Feng, Shengfei; Sun, Wenfeng; Ye, Jiasheng; Zhang, Yan

    2016-05-01

    We present a theoretical study on the ultrafast dynamics of coherent acoustic phonons in semiconductor quantum dots using continuum model calculations. The excitonic states and the coherent acoustic vibrational modes of semiconductor quantum dots are calculated using the effective mass approximation and continuum elastic medium model, respectively. By solving the Liouville–von Neumann equation and the equation of motion, we obtain the oscillation of coherent acoustic phonon amplitude excited by a pump pulse laser. Owing to the ultrafast excitation of coherent phonons, both the amplitude and the phase of the coherent phonon oscillation are constant with time. This coherent phonon oscillation results in conservation of the coherence of the exciton state, which cannot exist in a system interacting with incoherent phonons. We further study the amplitude and the period of coherent acoustic phonon oscillation as a function of pump pulse energy detuning, quantum dot size, and material.

  10. Application of quaternary phase diagrams to compound semiconductor processing. Progress report, April 1, 1988--December 31, 1988

    SciTech Connect

    Schwartzman, A.

    1988-12-31

    This paper considers the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Examples, listed in a table, include semiconductor/insulator/semiconductor (SIS) layered structures, II-VI/II-VI and III-V/II-VI epitaxial heterojunctions and oxidation of ternary compounds. Solid solubility is taken into account for quaternary phase diagrams of semiconductor systems. Using free energies of formation, a method to calculate the quaternary phase diagrams was developed. The Ga-As-II-VI and Cd-Te-Zn-O phase diagrams are reviewed as examples of quaternary phase diagrams without and with solid solubility.

  11. Cryptography based on the absorption/emission features of multicolor semiconductor nanocrystal quantum dots

    NASA Astrophysics Data System (ADS)

    Zhou, Ming; Chang, Shoude; Grover, Chander P.

    2004-06-01

    Further to the optical coding based on fluorescent semiconductor quantum dots (QDs), a concept of using mixtures of multiple single-color QDs for creating highly secret cryptograms based on their absorption/emission properties was demonstrated. The key to readout of the optical codes is a group of excitation lights with the predetermined wavelengths programmed in a secret manner. The cryptograms can be printed on the surfaces of different objects such as valuable documents for security purposes.

  12. Ab initio study of II-(VI)2 dichalcogenides.

    PubMed

    Olsson, P; Vidal, J; Lincot, D

    2011-10-12

    The structural stabilities of the (Zn,Cd)(S,Se,Te)(2) dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe(2) pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications. PMID:21937783

  13. Carbon-shell-decorated p-semiconductor PbMoO4 nanocrystals for efficient and stable photocathode of photoelectrochemical water reduction

    NASA Astrophysics Data System (ADS)

    Wang, Ligang; Tang, Hanqin; Tian, Yang

    2016-07-01

    Photoelectrochemical (PEC) water splitting using semiconductors is a promising method for the future scalable production of renewable hydrogen fuels. The critical issues in PEC water splitting include the development of the photoelectrode materials with high efficiency and long-term stability, especially for p-type semiconductor photocathodes. Herein, we report the use of citric acid (CA) pyrolysis to prepare carbon-shell-decorated PbMoO4 (C@PbMoO4) nanocrystals via a simple solvothermal method. Different carbon shell thicknesses below 10 nm were generated by varying the amount of CA in the precursor solution. In contrast, without using CA, bare PbMoO4 nanocrystals were obtained. The PEC experiments showed that 2-nm carbon shell could preferably improve the water splitting performance of PbMoO4: the photocurrent density of 2-nm C@PbMoO4 is nearly 2-fold high as that of bare PbMoO4 at 0 V versus reversible hydrogen electrode (RHE). The surface charge transfer efficiency of 2-nm C@PbMoO4 in the PEC process was tested to increase from 83% to 90.4%, the charge separation efficiency enhanced 56%, and the PEC stability also greatly increased compared to those of the bare PbMoO4 nanocrystals. This strategy could be applied to other p-type semiconducting photocathodes for low-cost solar-fuel-generation devices.

  14. Application of semiconductor fluorescent nanocrystals as optical probes for rapid early viral detection

    NASA Astrophysics Data System (ADS)

    Bentzen, Elizabeth L.; House, Frances; Tomlinson, Ian D.; Rosenthal, Sandra J.; Crowe, James E.; Wright, David D.

    2005-04-01

    Fluorescence is a tool widely employed in biological assays. Fluorescent semiconducting nanocrystals, quantum dots (QDs), are beginning to find their way into the tool box of many biologist, chemist and biochemist. These quantum dots are an attractive alternative to the traditional organic dyes due to their broad excitation spectra, narrow emission spectra and photostability. Non-specific binding is a frequently encountered problem with fluorescent labeling in biological assays. In these studies various cell lines were examined for non-specific binding to quantum dots. Evidence suggests that non-specific binding is related to cell type and, may be significantly reduced by functionalizing quantum dots with polyethyleneglycol ligands (PEG). In addition quantum dots were used to detect and monitor the progession of the viral glycoproteins ,F (fusion) and G (attachment), from Respiratory Syncytial Virus (RSV) in HEp-2 cells. RSV is the most common cause of lower respiratory tract infection in children worldwide and the most common cause of hospitalization of infants in the US. Antiviral therapy is available for treatment of RSV but is only effective if given within the first 48 hours of infection. Existing test methods require a virus level of at least 1000-fold of the amount needed for infection of most children and require several days to weeks to obtain results. The use of quantum dots may provide an early, rapid method for detection and provide insight into the trafficking of viral proteins during the course of infection.

  15. Biexciton Auger Recombination in CdSe/CdS Core/Shell Semiconductor Nanocrystals.

    PubMed

    Vaxenburg, Roman; Rodina, Anna; Lifshitz, Efrat; L Efros, Alexander

    2016-04-13

    A theoretical study of the positive and negative trion channels in the nonradiative Auger recombination of band-edge biexcitons (BXs) in CdSe/CdS core/shell nanocrystals (NCs) is presented. The theory takes into account the BX fine-structure produced by NC asymmetry and hole-hole exchange interaction. The calculations show that growth of CdS shell upon CdSe core suppresses the rate of the Auger recombination via negative trion channel, while the more efficient Auger recombination via positive trion channel shows much weaker dependence on the shell thickness. The demonstrated oscillatory dependence of the BX Auger rate on the core and shell sizes is explained qualitatively in terms of overlap of the ground and excited carrier wave functions. The calculations show that raise of temperature accelerates the Auger recombination in CdSe/CdS NCs due to reduction of the bulk energy gaps of CdSe and CdS. PMID:26950398

  16. How Robust are Semiconductor Nanorods? Investigating the Stability and Chemical Decomposition Pathways of Photoactive Nanocrystals

    SciTech Connect

    Reichert, Malinda D; Lin, Chia-Cheng; Vela, Javier

    2014-07-08

    Anisotropic II–VI semiconductor nanostructures are important photoactive materials for various energy conversion and optical applications. However, aside from the many available surface chemistry studies and from their ubiquitous photodegradation under continuous illumination, the general chemical reactivity and thermal stability (phase and shape transformations) of these materials are poorly understood. Using CdSe and CdS nanorods as model systems, we have investigated the behavior of II–VI semiconductor nanorods against various conditions of extreme chemical and physical stress (acids, bases, oxidants, reductants, and heat). CdSe nanorods react rapidly with acids, becoming oxidized to Se or SeO2. In contrast, CdSe nanorods remain mostly unreactive when treated with bases or strong oxidants, although bases do partially etch the tips of the nanorods (along their axis). Roasting (heating in air) of CdSe nanorods results in rock-salt CdO, but neither CdSe nor CdO is easily reduced by hydrogen (H2). Another reductant, n-BuLi, reduces CdSe nanorods to metallic Cd. Variable temperature X-ray diffraction experiments show that axial annealing and selective axial melting of the nanorods precede particle coalescence. Furthermore, thermal analysis shows that the axial melting of II–VI nanorods is a ligand-dependent process. In agreement with chemical reactivity and thermal stability observations, silica-coating experiments show that the sharpest (most curved) II–VI surfaces are most active against heterogeneous nucleation of a silica shell. These results provide valuable insights into the fate and possible ways to enhance the stability and improve the use of II–VI semiconductor nanostructures in the fields of optics, magnetism, and energy conversion.

  17. 77 FR 21586 - II-VI, Incorporated, Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Affirmative...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-10

    ... was published in the Federal Register on February 14, 2012 (77 FR 8281). The workers were engaged in... Employment and Training Administration II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg... former workers of II-VI, Incorporated, Infrared Optics--Saxonburg Division, Saxonburg,...

  18. Multiple junction II-VI compound photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Russak, Michael A.

    1986-12-01

    The application of concepts used in producing tandem solid state photovoltaic devices to photoelectrochemical cells has resulted in improved spectral response and photovoltaic output. As in solid state devices, the key to achieving good photovoltaic performance is optimization of the semiconductor properties in each part of the tandem arrangement. This has been done for the thin film CdS/CdSe/sulfide-polysulfide system with an improvement of over 15 percent in conversion efficiency being obtained. Preliminary results showing significant current enhancement by the addition of a CdSe backwall electrode to the CdTe/selenide-polyselenide system are also reported.

  19. Modeling of mechanical properties of II-VI materials

    NASA Technical Reports Server (NTRS)

    Sher, A.; Berding, M. A.; Van Schilfgaarde, M.; Chen, A.-B.; Patrick, R.

    1988-01-01

    This paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).

  20. Biosynthesis of fluorescent CdS nanocrystals with semiconductor properties: Comparison of microbial and plant production systems.

    PubMed

    Al-Shalabi, Zahwa; Doran, Pauline M

    2016-04-10

    This study investigated fission yeast (Schizosaccharomyces pombe) and hairy roots of tomato (Solanum lycopersicum) as in vitro production vehicles for biological synthesis of CdS quantum dots. Cd added during the mid-growth phase of the cultures was detoxified within the biomass into inorganic sulphide-containing complexes with the quantum confinement properties of semiconductor nanocrystals. Significant differences were found between the two host systems in terms of nanoparticle production kinetics, yield and quality. The much slower growth rate of hairy roots compared with yeast is a disadvantage for commercial scaled-up production. Nanoparticle extraction from the biomass was less effective for the roots: 19% of the Cd present in the hairy roots was recovered after extraction compared with 34% for the yeast. The overall yield of CdS quantum dots was also lower for the roots: relative to the amount of Cd taken up into the biomass, 8.5% was recovered in yeast gel filtration fractions exhibiting quantum dot properties whereas the result for hairy roots was only 0.99%. Yeast-produced CdS crystallites were somewhat smaller with diameters of approximately 2-6nm compared with those of 4-10nm obtained from the roots. The average ratio of inorganic sulphide to Cd for the purified and size-fractionated particles was 0.44 for the yeast and 1.6 for the hairy roots. Despite the limitations associated with hairy roots in terms of culture kinetics and product yield, this system produced CdS nanoparticles with enhanced photostability and 3.7-13-fold higher fluorescence quantum efficiency compared with those generated by yeast. This work demonstrates that the choice of cellular host can have a significant effect on nanoparticle functional properties as well as on the bioprocessing aspects of biological quantum dot synthesis. PMID:26880539

  1. MBE of wide bandgap II-VI compounds

    NASA Astrophysics Data System (ADS)

    Gunshor, R. L.; Kobayashi, M.; Kolodziejski, L. A.; Otsuka, N.; Nurmikko, A. V.

    1990-01-01

    A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit two-dimensional electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

  2. Photoswitchable semiconductor nanocrystals with self-regulating photochromic Förster resonance energy transfer acceptors

    NASA Astrophysics Data System (ADS)

    Díaz, Sebastián A.; Gillanders, Florencia; Jares-Erijman, Elizabeth A.; Jovin, Thomas M.

    2015-01-01

    Photoswitchable molecules and nanoparticles constitute superior biosensors for a wide range of industrial, research and biomedical applications. Rendered reversible by spontaneous or deterministic means, such probes facilitate many of the techniques in fluorescence microscopy that surpass the optical resolution dictated by diffraction. Here we have devised a family of photoswitchable quantum dots (psQDs) in which the semiconductor core functions as a fluorescence donor in Förster resonance energy transfer (FRET), and multiple photochromic diheteroarylethene groups function as acceptors upon activation by ultraviolet light. The QDs were coated with a polymer bearing photochromic groups attached via linkers of different length. Despite the resulting nominal differences in donor-acceptor separation and anticipated FRET efficiencies, the maximum quenching of all psQD preparations was 38±2%. This result was attributable to the large ultraviolet absorption cross-section of the QDs, leading to preferential cycloreversion of photochromic groups situated closer to the nanoparticle surface and/or with a more favourable orientation.

  3. Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

    2004-03-01

    The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

  4. Optimizing the synthesis of red- and near-infrared CuInS2 and AgInS2 semiconductor nanocrystals for bioimaging.

    PubMed

    Liu, Liwei; Hu, Rui; Law, Wing-Chueng; Roy, Indrajit; Zhu, Jing; Ye, Ling; Hu, Siyi; Zhang, Xihe; Yong, Ken-Tye

    2013-10-21

    This work reports the study of optimization of the reaction parameters on the synthesis of high quality CuInS2 and AgInS2 nanocrystals for bioimaging applications. The concentration of reaction precursors (e.g. Ag, Cu, In and S) plays a key role in determining the emission profile of these ternary quantum dots (QDs). By carefully varying the precursor compositions, the emission of QD can be tuned from red to near infrared (NIR) region. Taking the advantages of NIR emission, which possesses minimal absorption in biological tissues, we have also prepared water-dispersible CuInS2/ZnS and AgInS2/ZnS nanocrystals and demonstrated the high biocompatibility for both deep tissue penetration and tumor targeting. The QDs were stabilized in Pluronic F127 block copolymer micelles, offering us optically and colloidally stable contrast agents for in vitro and in vivo imaging. Two-photon excitation of QD has also been demonstrated, accomplishing a NIR-to-NIR transaction. This study devotes the key steps in promoting the use of ternary QDs as low-toxic, photostable, and cadmium-free semiconductor nanocrystal formulation for multiple imaging applications. PMID:23967444

  5. Mesoporous silica beads embedded with semiconductor quantum dots and iron oxide nanocrystals: dual-function microcarriers for optical encoding and magnetic separation.

    PubMed

    Sathe, Tushar R; Agrawal, Amit; Nie, Shuming

    2006-08-15

    Mesoporous beads are promising materials for embedding functional nanoparticles because of their nanometer-sized pores and large surface areas. Here we report the development of silica microbeads embedded with both semiconductor quantum dots (QD) and iron oxide (Fe3O4) nanocrystals as a new class of dual-function carriers for optical encoding and magnetic separation. The embedding (doping) process is carried out by either simultaneous or sequential addition of quantum dots and iron oxide (Fe3O4) nanocrystals in solution. The doping process is fast and quantitative, but the incorporated iron oxide strongly attenuates the signal intensity of QD fluorescence. We find that this attenuation is not due to conventional fluorescence quenching but is caused by the broad optical absorption spectrum of mixed-valence Fe3O4. For improved biocompatibility and reduced nonspecific binding, the encoded beads are further coated with amphiphilic polymers such as octylamine poly(acrylic acid). The results indicate that the polymer-coated beads are well suited for target capturing and enrichment, yielding magnetic separation efficiencies higher than 99%. By combining the multiplexing capability of QDs with the superparamagnetic properties of iron oxide nanocrystals, this class of encoded beads is expected to find broad applications in high-throughput and multiplexed biomolecular assays. PMID:16906704

  6. Correlation of Schottky constants with interatomic distances of selected I-VII and II-VI compounds

    NASA Astrophysics Data System (ADS)

    Wiedemeier, Heribert

    2013-10-01

    The observed linear (Na-, K-halides) and near-linear (Mg-, Sr-, Zn-, Cd-, and Hg-chalcogenides) dependences of Schottky constants on reciprocal interatomic distances yield the relation logKS=((ss1/T)+is)1/d(A-B)+(si1/T)+ii, where KS is the product of metal and non-metal thermal equilibrium vacancy concentrations, and ss, is, si and ii are the group specific slope and intercept values obtained from an extended analysis of the above log KS versus 1/d(A-B) data. The previously reported linear dependences of log KS on the Born-Haber lattice energies [1] are the basis for combining the earlier results [1] with the Born-Mayer lattice energy equation to yield a new thermodynamic relationship, namely logKS=-(2.303(c(B-M)/d(A-B)-Ie), where c(B-M) is the product of the constants of the Born-Mayer equation and Ie is the metal ionization energy of the above compounds. These results establish a correlation between point defect concentrations and basic thermodynamic, coulombic, and structural solid state properties for selected I-VII and II-VI semiconductor materials.

  7. Time-resolved optical studies of wide-gap II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Hong

    ZnSe and ZnSe-based quantum well and superlattice structures are potential candidates for light emitting devices and other optical devices such as switches and modulators working in the blue-green wavelength range. Carrier dynamics studies of these structures are important in evaluating device performance as well as understanding the underlying physical processes. In this thesis, a carrier dynamics investigation is conducted for temperature from 77K to 295K on CdZnSSe/ZnSSe single quantum well structure (SQW) and ZnSe/ZnSTe superlattice fabricated by molecular beam epitaxy (MBE). Two experimental techniques with femtosecond time resolution are used in this work: up-conversion technique for time- resolved photoluminescence (PL) and pump-probe technique for time-resolved differential absorption studies. For both heterostructures, the radiative recombination is dominated by exciton transition due to the large exciton binding energy as a result of quantum confinement effect. The measured decay time of free exciton PL in CdZnSSe/ZnSSe SQW increases linearly with increasing temperature which agrees with the theoretical prediction by considering the conservation of momentum requirement for radiative recombination. However, the recombination of free carriers is also observed in CdZnSSe/ZnSSe SQW for the whole temperature range studied. On the other hand, in ZnSe/ZnSTe superlattice structures, the non- radiative recombination processes are non-negligible even at 77K and become more important in higher temperature range. The relaxation processes such as spectral hole burning, carrier thermalization and hot-carrier cooling are observed in ZnSe/ZnSTe superlattices at room temperature (295K) by the femtosecond pump-probe measurements. A rapid cooling of the thermalized hot- carrier from 763K to 450K within 4ps is deduced. A large optical nonlinearity (i.e., the induced absorption change) around the heavy-hole exciton energy is also obtained.

  8. Assessment of subsurface damage in polished II-VI semiconductors by ion channeling

    NASA Astrophysics Data System (ADS)

    Lucca, D. A.; Wetteland, C. J.; Misra, A.; Klopfstein, M. J.; Nastasi, M.; Maggiore, C. J.; Tesmer, J. R.

    2004-06-01

    Surfaces of bulk single crystal CdS, ZnSe and ZnO were prepared by mechanical polishing with 1 and 1/4 μm diamond abrasive slurries and by chemomechanical polishing with sodium hypochlorite:colloidal silica. Etched surfaces, indicative of original crystalline quality were also prepared. Near surface damage was investigated by ion channeling with He ions using incident beam energies of 2 and 5 MeV and detector positions of 75° and 13°. Damage depths were found to be significantly higher for ZnSe when compared to CdS or ZnO. The chemomechanical polishing process was seen to introduce small but measurable subsurface damage in CdS and ZnSe. However, channeling was unable to detect any damage for the chemomechanically polished ZnO surfaces, a result which was supported by cross-section transmission electron microscopy (XTEM). The presence of damage beyond that identified by the surface peak for the mechanically polished ZnSe surfaces was indicated by the dechanneling behavior below the surface.

  9. Theoretical studies of II-VI semiconductors, carbon-nitride compounds, fullerenes and nanotubes

    NASA Astrophysics Data System (ADS)

    Cote, Michel

    1998-12-01

    Under the Carl D. Perkins Act Vocational and Applied Technology Act Amendments of 1990, community colleges were mandated to integrate academic and occupational education for all students, though the Act did not specify the ways in which this might be accomplished or set guidelines for compliance. This dissertation offers a rubric by which compliance can be measured---the Domains of Career Preparation---a comprehensive taxonomy of academic and occupational competencies which prepares all students for work and for further education. Applying the Domains and the models of integration identified by Grubb and Kraskouskas (1992), the dissertation reports compliance among a random one-third of the community colleges of each state. In addition, the dissertation examines organizational characteristics and implementation attributes to understand how this federal policy has failed to change local practice. The data reveals that colleges are more likely to adopt isomorphic structures and curriculum than they are to risk the implementation of innovations. The final chapter of the dissertation builds on theories of organizational change and adoption of innovations and describes a research-practice-policy collaborative to foster substantive curricular reform among a select group of colleges, who might then be imitated by their counterparts. The combination of benchmarks and structures for innovation has the potential to expand capacity and will of community college leaders to meet the instructional needs of a highly diverse population.

  10. Band anticrossing in highly mismatched group II-VI semiconductor alloys

    SciTech Connect

    Yu, K.M.; Wu, J.; Walukiewicz, W.; Beeman, J.W.; Ager, J.W.; Haller, E.E.; Miotkowski, I.; Ramdas, A.

    2001-10-03

    We have successfully synthesized highly mismatched Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys by high dose implantation of O ions into Cd{sub 1-y}Mn{sub y}Te crystals. In crystals with y > 0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd{sub 0.38}Mn{sub 0.62}Te. The results are consistent with the band anticrossing model which predicts that a repulsive interaction between localized states of O located above the conduction band edge and the extended states of the conduction band causes the band gap reduction. A best fit of the measured band gap energies of the O ion synthesized Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys using the band anticrossing model for y < 0.55 suggests an activation efficiency of only {approx}5% for implanted O in Cd{sub 1-y}Mn{sub y}Te.

  11. Thermophysical Properties of Te-based II-VI Semiconductors: Reduced Algorithms for Thermal Diffusivity Determination

    NASA Technical Reports Server (NTRS)

    Banish, R. Michael; Brantschen, Segolene; Pourpoint, Timothee L.; Wessling, Francis; Sekerka, Robert F.

    2003-01-01

    This paper presents methodologies for measuring the thermal diffusivity using the difference between temperatures measured at two, essentially independent, locations. A heat pulse is applied for an arbitrary time to one region of the sample; either the inner core or the outer wall. Temperature changes are then monitored versus time. The thermal diffusivity is calculated from the temperature difference versus time. No initial conditions are used directly in the final results.

  12. Characterization of ultrathin II-VI semiconductor nanowires by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Cai, Yuan

    Using the molecular-beam epitaxy technique, high-quality and ultra thin ZnSe and ZnS nanowires have been fabricated on different substrates based on the Au-catalytic vapor-liquid-solid (VLS) reaction. The nucleation, initial growth, growth rates, defects, interface structures and growth direction of the nanowires were systematically investigated by high-resolution transmission electron microscopy (HRTEM). The possible mechanisms of nanowire formation were proposed by combining the classical VLS process with the surface diffusion theory. The electrical and optical properties were also characterized. Particularly, this study has focused on how the growth temperature and the size of the catalysts influence the morphology, structure and growth direction of these nanowires. The nanowires were grown on different substrates, e.g., GaAs (001), (110) and (111). The Au catalysts were prepared by depositing a thin layer of Au on the substrate at 150°C and annealing the substrate subsequently at 530°C for 10 min. Uniform Au-alloy droplets formed on the substrate surface by the annealing process. The sizes of Au droplets were mainly determined by the thickness of the Au thin layer. The Au droplets initially reacted with the substrate of GaAs to form AuGa2 phase and As evaporated. For ZnSe substrates, Au-Zn alloy formed and Se evaporated. The nanowires were then grown at temperatures ranging from 390°C to 530°C, using a ZnSe or ZnS compound source. The morphology and structure of the ZnSe nanowires grown by MBE are in some way dependent on the growth conditions such as the substrate temperature. The nanowires grown at a high temperature (TS=520°C) exhibit smooth surfaces and uniform diameters. In contrast, the nanowires grown at a low temperature (TS=400°C) have a tapered shape and slightly sawtooth facets. In addition, the decrease of growth temperature greatly increases the density of defects. But the interfaces between the catalysts and nanowires are generally the lowest energy {111} planes, which is independent of the growth conditions and nanowire diameters. This study has focused on how growth temperatures and the sizes of the catalysts influence the growth direction of the ultrathin nanowires. TEM studies revealed that the structure and growth direction of ultra thin nanowires are highly sensitive to growth temperatures and nanowire diameters. At a low growth temperature (400°C) <111> direction was resulted in most nanowires. Planar defects (mainly stacking faults and twins) were found to extend throughout the nanowires. At a high growth temperature (520°C), structurally uniform <110> and <112> nanowires were typically found in nanowires with diameters around 10nm, while <111> nanowires were mainly found in nanowires with diameter larger than 20nm. The size-dependent and temperature-dependent growth directions of the nanowires were analyzed based on the estimation of the nanowire surface and interface energies. The relationship among the growth direction, temperature and the diameter were quantitatively elucidated. According to the classical VLS growth model, an important parameter, the critical thickness LC, was introduced for the first time which determined the transition of the growth directions of nanowires. In addition, the electrical transport through an individual nanowire was characterized via in-situ measurement by the STM-TEM equipment. The resistivity of the ultrathin ZnSe nanowires was measured to be about 1x102Ocm. When applying a large current through a single crystalline ZnSe nanowire, we observed melting phenomena and structural changes.

  13. Electrochromic nanocrystal quantum dots.

    PubMed

    Wang, C; Shim, M; Guyot-Sionnest, P

    2001-03-23

    Incorporating nanocrystals into future electronic or optoelectronic devices will require a means of controlling charge-injection processes and an understanding of how the injected charges affect the properties of nanocrystals. We show that the optical properties of colloidal semiconductor nanocrystal quantum dots can be tuned by an electrochemical potential. The injection of electrons into the quantum-confined states of the nanocrystal leads to an electrochromic response, including a strong, size-tunable, midinfrared absorption corresponding to an intraband transition, a bleach of the visible interband exciton transitions, and a quench of the narrow band-edge photoluminescence. PMID:11264530

  14. Silicon nanocrystal inks, films, and methods

    DOEpatents

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  15. CDTE CERAMICS BASED ON COMPRESSION OF NANOCRYSTAL POWDER.

    SciTech Connect

    KOLESNIKOV, N.N.; BORISENKO, E.B.; BORISENKO, D.N.; JAMES, R.B.; KVEDER, V.V.; GARTMAN, V.K.; GNESIN, G.A.

    2005-07-01

    Wide-gap II-VI semiconductor crystalline materials are conventionally used in laser optics, light emitting devices, and nuclear detectors. The advances made in the studies of nanocrystals and in the associated technologies have created great interest in the design of semiconductor devices based on these new materials. The objectives of this work are to study the microstructure and the properties of the new material produced through CdTe nanopowder compression and to consider the prospects of its use in the design of ionizing-radiation detectors and in laser optics. Highly dense material produced of 7-10 nm CdTe particles under pressure of 20-600 MPa at temperatures from 20 to 200 C was analyzed using x-ray diffractometry, texture analysis; light and scanning electron microscopy, and optical spectrophotometry. The mechanical and electrical properties of the compacted material were measured and compared with similar characteristics of the conventionally grown single crystals. Phase transformation from metastable to stable crystal structure caused by deformation was observed in the material. Sharp crystallographic texture {l_brace}001{r_brace} that apparently affects specific mechanical, electrical and optical characteristics of compacted CdTe was observed. The specific resistivity calculated from the linear current-voltage characteristics was about 10{sup 10} Ohm x cm, which is a promisingly high value regarding the possibility of using this material in the design of semiconductor radiation detectors. The optical spectra show that the transmittance in the infrared region is sufficient to consider the prospects of possible applications of CdTe ceramics in laser optics.

  16. Optimizing the synthesis of CdS/ZnS core/shell semiconductor nanocrystals for bioimaging applications.

    PubMed

    Liu, Li-Wei; Hu, Si-Yi; Pan, Ying; Zhang, Jia-Qi; Feng, Yue-Shu; Zhang, Xi-He

    2014-01-01

    In this study, we report on CdS/ZnS nanocrystals as a luminescence probe for bioimaging applications. CdS nanocrystals capped with a ZnS shell had enhanced luminescence intensity, stronger stability and exhibited a longer lifetime compared to uncapped CdS. The CdS/ZnS nanocrystals were stabilized in Pluronic F127 block copolymer micelles, offering an optically and colloidally stable contrast agents for in vitro and in vivo imaging. Photostability test exhibited that the ZnS protective shell not only enhances the brightness of the QDs but also improves their stability in a biological environment. An in-vivo imaging study showed that F127-CdS/ZnS micelles had strong luminescence. These results suggest that these nanoparticles have significant advantages for bioimaging applications and may offer a new direction for the early detection of cancer in humans. PMID:24991530

  17. Ion beam synthesis of CdS, ZnS, and PbS compound semiconductor nanocrystals

    SciTech Connect

    White, C.W.; Budai, J.D.; Meldrum, A.L.

    1997-12-01

    Sequential ion implantation followed by thermal annealing has been used to form encapsulated CdS, ZnS, and PbS nanocrystals in SiO{sub 2} and Al{sub 2}O{sub 3} matrices. In SiO{sub 2}, nanoparticles are nearly spherical and randomly oriented, and ZnS and PbS nanocrystals exhibit a bimodal size distribution. In Al{sub 2}O{sub 3}, nanoparticles are faceted and coherent with the matrix. Initial photoluminescence (PL) results are presented.

  18. LDRD-LW Final Report: 07-LW-041 "Magnetism in Semiconductor Nanocrystals: New Physics at the Nanoscale"

    SciTech Connect

    Meulenberg, R W; Lee, J I; McCall, S K

    2009-10-19

    The work conducted in this project was conducted with the aim of identifying and understanding the origin and mechanisms of magnetic behavior in undoped semiconductor nanocrystals (NCs), specifically those composed of CdSe. It was anticipated that the successful completion of this task would have the effect of addressing and resolving significant controversy over this topic in the literature. Meanwhile, application of the resultant knowledge was expected to permit manipulation of the magnetic properties, particularly the strength of any magnetic effects, which is of potential relevance in a range of advanced technologies. More specifically, the project was designed and research conducted with the goal of addressing the following series of questions: (1) How does the magnitude of the magnetism in CdSe NCs change with the organic molecules used to passivate their surface the NC size? i.e. Is the magnetism an intrinsic effect in the nanocrystalline CdSe (as observed for Au NCs) or a surface termination driven effect? (2) What is the chemical (elemental) nature of the magnetism? i.e. Are the magnetic effects associated with the Cd atoms or the Se atoms or both? (3) What is/are the underlying mechanism(s)? (4) How can the magnetism be controlled for further applications? To achieve this goal, several experimental/technical milestones were identified to be fulfilled during the course of the research: (A) The preparation of well characterized CdSe NCs with varying surface termination (B) Establishing the extent of the magnetism of these NCs using magnetometry (particularly using superconducting interference device [SQUID]) (C) Establishing the chemical nature of the magnetism using x-ray magnetic circular dichroism (XMCD) - the element specific nature of the technique allows identification of the element responsible for the magnetism (D) Identification of the effect of surface termination on the empty densities of states (DOS) using x-ray absorption spectroscopy (XAS

  19. Linearly arranged polytypic CZTSSe nanocrystals

    PubMed Central

    Fan, Feng-Jia; Wu, Liang; Gong, Ming; Chen, Shi You; Liu, Guang Yao; Yao, Hong-Bin; Liang, Hai-Wei; Wang, Yi-Xiu; Yu, Shu-Hong

    2012-01-01

    Even colloidal polytypic nanostructures show promising future in band-gap tuning and alignment, researches on them have been much less reported than the standard nano-heterostructures because of the difficulties involved in synthesis. Up to now, controlled synthesis of colloidal polytypic nanocrsytals has been only realized in II-VI tetrapod and octopod nanocrystals with branched configurations. Herein, we report a colloidal approach for synthesizing non-branched but linearly arranged polytypic I2-II-IV-VI4 nanocrystals, with a focus on polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystals. Each synthesized polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystal is consisted of two zinc blende-derived ends and one wurtzite-derived center part. The formation mechanism has been studied and the phase composition can be tuned through adjusting the reaction temperature, which brings a new band-gap tuning approach to Cu2ZnSnSxSe4-x nanocrystals. PMID:23233871

  20. Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures

    SciTech Connect

    Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

    2008-08-06

    colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

  1. Structural Investigations of Surfaces and Orientation-SpecificPhenomena in Nanocrystals and Their Assemblies

    SciTech Connect

    Aruguete, Deborah Michiko

    2006-06-17

    Studies of colloidal nanocrystals and their assemblies are presented. Two of these studies concern the atomic-level structural characterization of the surfaces, interfaces, and interiors present in II-VI semiconductor nanorods. The third study investigates the crystallographic arrangement of cobalt nanocrystals in self-assembled aggregates. Crystallographically-aligned assemblies of colloidal CdSe nanorods are examined with linearly-polarized Se-EXAFS spectroscopy, which probes bonding along different directions in the nanorod. This orientation-specific probe is used, because it is expected that the presence of specific surfaces in a nanorod might cause bond relaxations specific to different crystallographic directions. Se-Se distances are found to be contracted along the long axis of the nanorod, while Cd-Se distances display no angular dependence, which is different from the bulk. Ab-initio density functional theory calculations upon CdSe nanowires indicate that relaxations on the rod surfaces cause these changes. ZnS/CdS-CdSe core-shell nanorods are studied with Se, Zn, Cd, and S X-ray absorption spectroscopy (XAS). It is hypothesized that there are two major factors influencing the core and shell structures of the nanorods: the large surface area-to-volume ratio, and epitaxial strain. The presence of the surface may induce bond rearrangements or relaxations to minimize surface energy; epitaxial strain might cause the core and shell lattices to contract or expand to minimize strain energy. A marked contraction of Zn-S bonds is observed in the core-shell nanorods, indicating that surface relaxations may dominate the structure of the nanorod (strain might otherwise drive the Zn-S lattice to accommodate the larger CdS or CdSe lattices via bond expansion). EXAFS and X-ray diffraction (XRD) indicate that Cd-Se bond relaxations might be anisotropic, an expected phenomenon for a rod-shaped nanocrystal. Ordered self-assembled aggregates of cobalt nanocrystals are

  2. Structural investigations of surfaces and orientation-specific phenomena in nanocrystals and their assemblies

    NASA Astrophysics Data System (ADS)

    Aruguete, Deborah Michiko

    Studies of colloidal nanocrystals and their assemblies are presented. Two of these studies concern the atomic-level structural characterization of the surfaces, interfaces, and interiors present in II-VI semiconductor nanorods. The third study investigates the crystallographic arrangement of cobalt nanocrystals in self-assembled aggregates. Crystallographically-aligned assemblies of colloidal CdSe nanorods are examined with linearly-polarized Se-EXAFS spectroscopy, which probes bonding along different directions in the nanorod. This orientation-specific probe is used, because it is expected that the presence of specific surfaces in a nanorod might cause bond relaxations specific to different crystallographic directions. Se-Se distances are found to be contracted along the long axis of the nanorod, while Cd-Se distances display no angular dependence, which is different from the bulk. Ab-initio density functional theory calculations upon CdSe nanowires indicate that relaxations on the rod surfaces cause these changes. ZnS/CdS-CdSe core-shell nanorods are studied with Se, Zn, Cd, and S X-ray absorption spectroscopy (XAS). It is hypothesized that there are two major factors influencing the core and shell structures of the nanorods: the large surface area-to-volume ratio, and epitaxial strain. The presence of the surface may induce bond rearrangements or relaxations to minimize surface energy, epitaxial strain might cause the core and shell lattices to contract or expand to minimize strain energy. A marked contraction of Zn-S bonds is observed in the core-shell nanorods, indicating that surface relaxations may dominate the structure of the nanorod (strain might otherwise drive the Zn-S lattice to accommodate the larger US or CdSe lattices via bond expansion). EXAFS and X-ray diffraction (XRD) indicate that Cd-Se bond relaxations might be anisotropic, an expected phenomenon for a rod-shaped nanocrystal. Ordered self-assembled aggregates of cobalt nanocrystals are

  3. X-ray absorption fine structure and X-ray excited optical luminescence studies of II-VI semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Murphy, Michael Wayne

    2010-06-01

    of 0, 1,3, and 10% and annealed at 400, 600 and 800°C in air. XAFS spectra show that low dopant concentrations and low processing temperatures limit the amount of secondary phase formation. The nanopowders did not show roomtemperature ferromagnetism and increased secondary phase formation increases the paramagnetic character of the hysteresis curves at 5°K. Keywords: X-ray absorption fine structures (XAFS), X-ray absorption near-edge structures (XANES), extended X-ray absorption fine structure (EXAFS), X-ray absorption spectroscopy(XAS), X-ray excited optical luminescence (XEOL), time-resolved, II-VI semiconductors, nanostructure, nanomaterial, nanoribbon, nanowire, nanopartic1e, heterostructure, ZnO, ZnS, ZnO-ZnS, CdS, CdSe, CdSSe, ZnO:Mn, ZnO:Co, ZnS:Mn, dilute magnetic semiconductor (DMS), dilute magnetic oxide (DMO), spintronics, magnetism, paramagnetism, ferromagnetism.

  4. Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

    NASA Astrophysics Data System (ADS)

    Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

    1999-05-01

    We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

  5. Design of a multi-coordinating polymer as a platform for functionalizing metal, metal oxide and semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Wentao; Ji, Xin; Kapur, Anshika; Mattoussi, Hedi

    2016-03-01

    We introduce a new set of amphiphilic polymers as multifunctional, metal-coordinating ligands adapted to surfacefunctionalize quantum dots (QDs), iron oxide nanoparticles (IONPs) and gold nanoparticles/nanorods (AuNPs/AuNRs). The ligand design relies on the introduction of several anchoring groups, hydrophilic moieties and reactive functionalities into a polymer chain, via one-step nucleophilic addition reaction. Such synthetic scheme also allows the insertion of target biomolecules during the ligand synthesis. This functionalization strategy yields nanocrystals that exhibit long-term colloidal stability over a broad range of biological conditions, such as pH changes and when mixed with growth media. When zwitterion groups are used as hydrophilic motifs, this provides compact nanocrystals that are compatible with conjugation to proteins via metal-polyhistidine self-assembly. In addition, we show that QDs ligated with these polymers can engage in energy or charge transfer interactions. Furthermore, nanocrystals coated with folic acid-modified polymers could promote the delivery of nanoparticle-conjugates into cancer cells via folate receptormediated endocytosis.

  6. Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

  7. Anion vacancies in II-VI chalcogenides: Review and critical analysis

    NASA Astrophysics Data System (ADS)

    Babentsov, V.; James, R. B.

    2013-09-01

    We performed critical analysis and comparison of all EPR, photo-EPR, photosensitive optical absorption, photoluminescence, and photoconductivity data taken on various Zn- and Cd-related II-VI chalcogenides compounds, such as ZnO, ZnS, ZnSe, and ZnTe, and CdS, CdSe, and CdTe. We developed a scheme for the electronic transitions and recombination associated with anion vacancies that is common for all these materials. This scheme explains all known facts obtained to date on quenching and excitation of the EPR signal, optical absorption, photoluminescence and photoconductivity. Based on these data we determined that the location of the energy level of the singly charged anion vacancy, VA+, is nearly equal for Zn-related II-VI materials (EC-1.0 eV) and EC+0.8 eV for Cd-related materials. For Cd-related chalcogenides most of the data were derived only from photoluminescence- and photoconductivity-spectra, so based on the available data, the position of the energy level of a singly charged anion vacancy in these materials was determined not so convincingly. Nonetheless, these materials have attracted much interest for decades because of their industrial applications as luminescent devices, laser filters and other optical elements, infrared, visible- and (X) γ-ray-detectors, solar cells, and the like.

  8. Germanium Nanocrystal Solar Cells

    NASA Astrophysics Data System (ADS)

    Holman, Zachary Charles

    Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry

  9. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration. PMID:27113320

  10. Hydrogen in anion vacancies of semiconductors

    SciTech Connect

    Du, Mao-Hua; Singh, David J

    2009-01-01

    Density functional calculations show that, depending on the anion size, hydrogen in anion vacancies of various II-VI semiconductors can be either two-fold or four-fold coordinated, and has either amphoteric or shallow donor character. In general, the multi-coordination of hydrogen in an anion vacancy is the indication of an anionic H, H { ion, in the relatively ionic environment. In more covalent semiconductors, H would form a single cation-H bond in the anion vacancy.

  11. Hydrazine-promoted sequential cation exchange: a novel synthesis method for doped ternary semiconductor nanocrystals with tunable emission.

    PubMed

    Shao, Haibao; Wang, Chunlei; Xu, Shuhong; Jiang, Yuan; Shao, Yujie; Bo, Fan; Wang, Zhuyuan; Cui, Yiping

    2014-01-17

    Using ZnSe nanocrystals (NCs) as starting material, Ag-doped or Cu-doped ZnCdSe ternary NCs were prepared by hydrazine-promoted sequential cation exchange in aqueous media. The composition of the NCs can be flexibly controlled by varying the amount of intermediate Ag or Cu cation addition, thus changing the emission of the ternary NCs while preserving the NC size. According to Vegard's law, the as-prepared ternary NCs possess an alloyed structure. In addition, the ternary NCs obtained have a high quantum yield, strong stability and a broad optical tuning range. PMID:24334495

  12. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects

    NASA Astrophysics Data System (ADS)

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-01

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that

  13. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

    PubMed

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-10

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices. PMID:26677967

  14. Boîtes quantiques II-VI comme sources de photons uniques

    NASA Astrophysics Data System (ADS)

    Couteau, C.; Moehl, S.; Tinjod, F.; Suffczynski, J.; Romestain, R.; Vial, J.-C.; Gérard, J.-M.; Kheng, K.; Poizat, J.-P.

    2004-11-01

    Dans le cadre de l'information et de la communication quantique, la nécessité d'avoir des photons uniques monomodes et à la demande se révèle cruciale. De récents travaux théoriques ont montré la possibilité de réaliser des portes logiques quantiques n'utilisant que de l'optique linéaire. C'est dans ce contexte que s'insère notre travail sur l'élaboration et l'utilisation de boîtes quantiques semi-conductrices II-VI comme “pistolet” à photons. Des expériences de dégroupement et d'interférences à 2 photons sont les premiers pas nécessaires pour caractériser notre source.

  15. Relaxation and coherent oscillations in the spin dynamics of II-VI diluted magnetic quantum wells

    NASA Astrophysics Data System (ADS)

    Ungar, F.; Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2015-10-01

    We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic quantum wells in the presence of spin-orbit interaction. We extend a recent study where it was shown that the spin-orbit interaction and the exchange sd coupling in bulk and quantum wells can compete resulting in qualitatively new dynamics when they act simultaneously. We concentrate on Hg1-x-yMnxCdyTe quantum wells, which have a highly tunable Rashba spin-orbit coupling. Our calculations use a recently developed formalism which incorporates electronic correlations originating from the exchange sd-coupling. We find that the dependence of electronic spin oscillations on the excess energy changes qualitatively depending on whether or not the spin-orbit interaction dominates or is of comparable strength with the sd interaction.

  16. Mid-IR luminescence of Cr{sup 2+} : II - VI crystals in chalcogenide glass fibres

    SciTech Connect

    Mironov, Roman A; Zabezhailov, A O; Dianov, Evgenii M; Karaksina, E V; Shapashnikov, R M; Churbanov, M F

    2010-11-13

    Optical fibres have been fabricated for the first time from As{sub 2}S{sub 3} glass containing chromium-doped ZnS and ZnSe crystals, and their optical loss and luminescence spectra have been measured in the mid-IR. In the spectral range 2 - 3 {mu}m, the optical loss in the fibres is 2 - 4 dB m{sup -1}. The fibres have a broad luminescence band in the range 1.8 - 3 {mu}m, with a maximum near 1.9 {mu}m, which is due to Cr{sup 2+} {sup 5}E - {sup 5}T{sub 2} intracentre transitions in the II - VI host. (fibre optics)

  17. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  18. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  19. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    SciTech Connect

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  20. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  1. Nanocrystal Inks without Ligands: Stable Colloids of Bare Germanium Nanocrystals

    SciTech Connect

    Holman, Zachary C.; Kortshagen, Uwe R.

    2011-05-11

    Colloidal semiconductor nanocrystals typically have ligands attached to their surfaces that afford solubility in common solvents but hinder charge transport in nanocrystal films. Here, an alternative route is explored in which bare germanium nanocrystals are solubilized by select solvents to form stable colloids without the use of ligands. A survey of candidate solvents shows that germanium nanocrystals are completely solubilized by benzonitrile, likely because of electrostatic stabilization. Films cast from these dispersions are uniform, dense, and smooth, making them suitable for device applications without postdeposition treatment.

  2. 77 FR 36579 - II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased Workers From Adecco, Carol...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-19

    ... in the Federal Register on February 14, 2012 (77 FR 8281). The workers' firm is engaged in activities... Employment and Training Administration II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased...., Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Revised Determination on Reconsideration...

  3. Spectroscopic Signatures of Photocharging due to Hot-Carrier Transfer in Solutions of Semiconductor Nanocrystals under Low-Intensity Ultraviolet Excitation

    SciTech Connect

    McGuire, John A.; Sykora, Milan; Robel, Istvan; Padilha, Lazaro A.; Joo, Jin; Pietryga, Jeffrey M.; Klimov, Victor I.

    2010-10-12

    We show that excitation of solutions of well-passivated PbSe semiconductor nanocrystals (NCs) with ultraviolet (3.1 eV) photons can produce long-lived charge-separated states in which the NC core is left with a nonzero net charge. Since this process is not observed for lower-energy (1.5 eV) excitation, we ascribe it to hot-carrier transfer to some trap site outside the NC. Photocharging leads to bleaching of steady-state absorption, partial quenching of emission, and additional fast time scales in carrier dynamics due to Auger decay of charged single- and multiexciton states. The degree of photocharging, f, saturates at a level that varies from 5 to 15% depending on the sample. The buildup of the population of charged NCs is extremely slow indicating very long, tens of seconds, lifetimes of these charge-separated states. Based on these time scales and the measured onset of saturation of f at excitation rates around 0.05-1 photon per NC per ms, we determine that the probability of charging following a photon absorption event is of the order of 10-4 to 10-3. The results of these studies have important implications for the understanding of photophysical properties of NCs, especially in the case of time-resolved measurements of carrier multiplication.

  4. Spectroscopic signatures of photocharging due to hot-carrier transfer in solutions of semiconductor nanocrystals under low-intensity ultraviolet excitation.

    PubMed

    McGuire, John A; Sykora, Milan; Robel, István; Padilha, Lazaro A; Joo, Jin; Pietryga, Jeffrey M; Klimov, Victor I

    2010-10-26

    We show that excitation of solutions of well-passivated PbSe semiconductor nanocrystals (NCs) with ultraviolet (3.1 eV) photons can produce long-lived charge-separated states in which the NC core is left with a nonzero net charge. Since this process is not observed for lower-energy (1.5 eV) excitation, we ascribe it to hot-carrier transfer to some trap site outside the NC. Photocharging leads to bleaching of steady-state absorption, partial quenching of emission, and additional fast time scales in carrier dynamics due to Auger decay of charged single- and multiexciton states. The degree of photocharging, f, saturates at a level that varies from 5 to 15% depending on the sample. The buildup of the population of charged NCs is extremely slow indicating very long, tens of seconds, lifetimes of these charge-separated states. Based on these time scales and the measured onset of saturation of f at excitation rates around 0.05-1 photon per NC per ms, we determine that the probability of charging following a photon absorption event is of the order of 10(-4) to 10(-3). The results of these studies have important implications for the understanding of photophysical properties of NCs, especially in the case of time-resolved measurements of carrier multiplication. PMID:20939512

  5. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  6. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    SciTech Connect

    Zhang, Tian Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  7. Sorting fluorescent nanocrystals with DNA

    SciTech Connect

    Gerion, Daniele; Parak, Wolfgang J.; Williams, Shara C.; Zanchet, Daniela; Micheel, Christine M.; Alivisatos, A. Paul

    2001-12-10

    Semiconductor nanocrystals with narrow and tunable fluorescence are covalently linked to oligonucleotides. These biocompounds retain the properties of both nanocrystals and DNA. Therefore, different sequences of DNA can be coded with nanocrystals and still preserve their ability to hybridize to their complements. We report the case where four different sequences of DNA are linked to four nanocrystal samples having different colors of emission in the range of 530-640 nm. When the DNA-nanocrystal conjugates are mixed together, it is possible to sort each type of nanoparticle using hybridization on a defined micrometer -size surface containing the complementary oligonucleotide. Detection of sorting requires only a single excitation source and an epifluorescence microscope. The possibility of directing fluorescent nanocrystals towards specific biological targets and detecting them, combined with their superior photo-stability compared to organic dyes, opens the way to improved biolabeling experiments, such as gene mapping on a nanometer scale or multicolor microarray analysis.

  8. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, S.; Li, C.; Scripa, R.; Lehoczky, S. L.; Kim, Y. M.; Baird, J. K.; Lin, B.; Ban, H.; Benmore, Chris; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed

  9. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-08-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current (I D)-gate voltage (V G) and drain current (I D)-drain voltage (V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D-V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  10. Light emitting diodes from MOVPE-grown p- and n-doped II VI compounds

    NASA Astrophysics Data System (ADS)

    Gebhardt, W.; Hahn, B.; Stanzl, H.; Deufel, M.

    1996-02-01

    A critical review is given of the present state, the problems and the prospects of MOVPE-growth of II-VI LEDs. It is shown that MOVPE-growth on (001)GaAs substrates occurs preferentially in a three-dimensional growth mode independent of substrate preparation. ZnS xSe 1 - x grows in good quality over the whole range of composition x. Good quality of Zn xCd 1 - xSe was only obtained for low Cd-concentrations. Improvements can be expected from the use of new precursors. The n-doping of ZnSe and ZnS xSe 1 - x presents no problem when n-butylchloride is used. Carrier concentrations can be as high as n ≥ 10 18. Various nitrogen compounds have been used to achieve p-doping of ZnSe by MOVPE. We show that quite large concentrations of nitrogen can be incorporated by photoassisted MOVPE with phenylhydrazine as precursor. The nitrogen doped samples are usually highly compensated independent from the special doping procedure. Proper annealing can activate at least part of the incorporated nitrogen. The preparation of appropriate diode structures presents no special problems, however their room temperature (RT) luminescence efficiency is still low but may be considerably improved with increasing purity of precursors.

  11. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  12. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  13. Band Offsets of III-V and II-VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy

    NASA Astrophysics Data System (ADS)

    Perera, A. G. U.; Lao, Y. F.; Wijewarnasuriya, P. S.; Krishna, S. S.

    2016-06-01

    The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photoemission spectroscopy (TDIPS) for studying the band offsets. Applications of the TDIPS into III-V and II-VI materials are discussed.

  14. Determination of the dielectric functions of MBE-grown Zn1-xMgxTe II-VI semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Franz, A. J.; Peiris, F. C.; Liu, X.; Bindley, U.; Furdyna, J. K.

    2004-02-01

    We have explored the dielectric functions of ternary Zn1-xMgxTe thin films using a variable angle spectroscopic ellipsometer for samples between x = 0 and x = 0.52. We obtained values for the complex dielectric function for Zn1-xMgxTe in both the transparent and absorption regions by incorporating a threelayer model to simulate the experimental data. To this end, we also used the previously published relations of the dispersion of the indices of refraction (in the transparent region) of Zn1-xMgxTe measured using a combination of prism coupler and reflectivity. We have fitted the second derivatives of both the real and the imaginary parts of the dielectric function to obtain the critical point parameters corresponding to the higher order electronic transitions in the lattice.

  15. Evolution of exciton states near the percolation threshold in two-phase systems with II-VI semiconductor quantum dots

    SciTech Connect

    Bondar, N. V. Brodyn, M. S.

    2010-07-15

    From studies of two-phase systems (borosilicate matrices containing ZnSe or CdS quantum dots), it was found that the systems exhibit a specific feature associated with the percolation phase transition of charge carriers (excitons). The transition manifests itself as radical changes in the optical spectra of both ZnSe and CdS quantum dot systems and by fluctuations of the emission band intensities near the percolation threshold. These effects are due to microscopic fluctuations of the density of quantum dots. The average spacing between quantum dots is calculated taking into account their finite dimensions and the volume fraction occupied by the quantum dots at the percolation threshold. It is shown that clustering of quantum dots occurs via tunneling of charge carriers between the dots. A physical mechanism responsible for the percolation threshold for charge carriers is suggested. In the mechanism, the permittivity mismatch of the materials of the matrix and quantum dots plays an important role in delocalization of charge carriers (excitons): due to the mismatch, 'a dielectric trap' is formed at the external surface of the interface between the matrix and a quantum dot and, thus, surface exciton states are formed there. The critical concentrations of quantum dots are determined, such that the spatial overlapping of such surface states provides the percolation transition in both systems.

  16. Phase Coherent Photorefractive Effect in II-VI Semiconductor Quantum Wells and its Application for Optical Coherence Imaging

    NASA Astrophysics Data System (ADS)

    Kabir, Amin

    The phase coherent photorefractive (PCP) effect in different ZnSe quantum well structures and its dependence on various extrinsic and intrinsic parameters have been investigated using 90 fs laser pulse in a two-beam four-wave-mixing (FWM) configuration. At low excitation intensities the signal is dominated by the PCP effect (which is attributed to a long living electron grating formed in the QW due to coherent QW excitons) and pulse overlap (PO) effect while at high excitation intensities it is governed by chi(3) FWM processes and the PO effect. With increasing excitation intensity the signal dip at pulse overlap (tau ≈ 0 ) which is characteristic for the destructive interference between the PO and PCP effect shifts to positive delay times tau > 0. The higher PCP diffraction efficiency value of ˜1.5 x10-3 in QW B (Zn0.92Mg0.08Se/ZnSe) as compared to the value of ˜3.5 x 10-4 in QW A (Zn0.94Mg 0.06Se/ZnSe) at 55 K is attributed to an increased Mg concentration in the barrier of QW B leading to a higher captured equilibrium electron density ne. Repetition rate dependent measurements on QW B show a drop of the diffraction efficiency for repetition times larger than 1.25 mus which is attributed to the reduction of the electron grating amplitude due to thermally activated electron tunneling. FWM experiments on two 10 nm ZnSe QWs with different barrier thicknesses of 20 (QW1) and 50 nm (QW2) between the QW and substrate show a redshift of the exciton line and an increased exciton dephasing rate due to increasing E-field induced tilt of the QW structure indicating an increased density of captured electrons ne. At temperatures below 35 K and laser excitation close to the exciton energy the creation of trions significantly compensates the formation of the spatially modulated electron density grating. At lower excitation energies increasing space-charge-fields significantly tilt the QW which reduces the trion binding energy leading to an enhanced thermal ionization of trions resulting in a strong PCP effect at even low temperature. Because of the thermal dissociation of trions at temperatures above 40 K a significant PCP effect exists even at nearly exciton resonant excitation. Model calculations of the signal traces which are based on the optical Bloch equations considering E-field induced inhomogeneous broadening of exciton energies are in good agreement to the experimental exciton traces observed at different excitation condition. Using the time-gating capability of PCP QWs we have demonstrated "single-shot" three-dimensional optical coherence imaging (OCI) in which the depth of an object is determined from the brightness profile of its holographic image. We present real-time and depth-resolved OCI of moving glass beads of ˜100 micrometer size in solution. We have also performed "contrast-enhanced" OCI experiment which enables the detection of both reflecting and absorbing objects providing real-size images within an unlimited field-of-depth. Improved PCP QW with higher diffraction efficiencies and a combined recording of objects in both OCI modes bear tremendous potential for monitoring dynamical processes in biological systems and for particle detection.

  17. Robust Topological Interfaces and Charge Transfer in Epitaxial Bi2Se3/II-VI Semiconductor Superlattices.

    PubMed

    Chen, Zhiyi; Zhao, Lukas; Park, Kyungwha; Garcia, Thor Axtmann; Tamargo, Maria C; Krusin-Elbaum, Lia

    2015-10-14

    Access to charge transport through Dirac surface states in topological insulators (TIs) can be challenging due to their intermixing with bulk states or nontopological two-dimensional electron gas (2DEG) quantum well states caused by bending of electronic bands near the surface. The band bending arises via charge transfer from surface adatoms or interfaces and, therefore, the choice of layers abutting topological surfaces is critical. Here we report molecular beam epitaxial growth of Bi2Se3/ZnxCd1-xSe superlattices that hold only one topological surface channel per TI layer. The topological nature of conducting channels is supported by π-Berry phase evident from observed Shubnikov de Haas quantum oscillations and by the associated two-dimensional (2D) weak antilocalization quantum interference correction to magnetoresistance. Both density functional theory (DFT) calculations and transport measurements suggest that a single topological Dirac cone per TI layer can be realized by asymmetric interfaces: Se-terminated ZnxCd1-xSe interface with the TI remains "electronically intact", while charge transfer occurs at the Zn-terminated interface. Our findings indicate that topological transport could be controlled by adjusting charge transfer from nontopological spacers in hybrid structures. PMID:26348593

  18. Solidification of II-VI Compounds in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Volz, M. P.; Mazuruk, K.; Motakef, S.; Dudley, M.; Matyi, R.

    1999-01-01

    This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow

  19. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2010-04-06

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

  20. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2008-02-05

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties

  1. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    NASA Technical Reports Server (NTRS)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  2. Acid-free sol-gel fabrication of glass thin films embedded with II-VI colloidal quantum dots

    NASA Astrophysics Data System (ADS)

    Jani, Hemang; Duan, Lingze

    2015-01-01

    II-VI colloidal quantum dots (QDs) are ideal for optical sensors thanks to their high fluorescent brightness and good size uniformity. However, embedding colloidal QDs into a glass matrix with the standard sol-gel process leads to the QDs being damaged by the acid catalyst. Here, we report an acid-free sol-gel technique, which proves to be both simple and effective in fabricating silica glass thin films embedded with commercial II-VI colloidal QDs. Octadecylamine ligands are used as a bifunctional aid to not only stabilize the QDs in solution, but also assist the formation of the SiO2 gel. We demonstrate that high-quality QD-embedded glass thin films can be developed with this technique, and our fluorescent tests indicate that, except for a small blueshift in the emission spectrum, the QDs are very well preserved through the sol-gel process. This method offers a fast and low-cost path towards thin-film QD sensors with good mechanical and thermal stabilities, which are desirable for applications involving highly focused laser beams, such as ultrafast nanophotonics.

  3. The dual role of sulfur-containing amino acids in the synthesis of IV-VI semiconductor nanocrystals: a mechanochemical approach.

    PubMed

    Baláž, Peter; Baláž, Matej; Caplovičová, Mária; Zorkovská, Anna; Caplovič, Lubomír; Psotka, Miroslav

    2014-01-01

    PbS@cystine nanocrystals were synthesized mechanochemically, with lead acetate and L-cystine being used as the lead and sulfur precursors, respectively. The resulting nanocrystals are 22-34 nm in size, well-faceted and octahedral in shape. Characterization by XRD, FT-IR, NMR, FE-SEM, EDS, TEM (HRTEM) and surface area measurement methods showed that the particles are single, defect-free crystals with a high crystallinity. Furthermore, the crystals were prepared using a solvent-free procedure that was performed under ambient temperature and atmospheric pressure. PMID:25406478

  4. Biomolecular Assembly of Gold Nanocrystals

    SciTech Connect

    Micheel, Christine Marya

    2005-05-20

    Over the past ten years, methods have been developed to construct discrete nanostructures using nanocrystals and biomolecules. While these frequently consist of gold nanocrystals and DNA, semiconductor nanocrystals as well as antibodies and enzymes have also been used. One example of discrete nanostructures is dimers of gold nanocrystals linked together with complementary DNA. This type of nanostructure is also known as a nanocrystal molecule. Discrete nanostructures of this kind have a number of potential applications, from highly parallel self-assembly of electronics components and rapid read-out of DNA computations to biological imaging and a variety of bioassays. My research focused in three main areas. The first area, the refinement of electrophoresis as a purification and characterization method, included application of agarose gel electrophoresis to the purification of discrete gold nanocrystal/DNA conjugates and nanocrystal molecules, as well as development of a more detailed understanding of the hydrodynamic behavior of these materials in gels. The second area, the development of methods for quantitative analysis of transmission electron microscope data, used computer programs written to find pair correlations as well as higher order correlations. With these programs, it is possible to reliably locate and measure nanocrystal molecules in TEM images. The final area of research explored the use of DNA ligase in the formation of nanocrystal molecules. Synthesis of dimers of gold particles linked with a single strand of DNA possible through the use of DNA ligase opens the possibility for amplification of nanostructures in a manner similar to polymerase chain reaction. These three areas are discussed in the context of the work in the Alivisatos group, as well as the field as a whole.

  5. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    DOEpatents

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  6. Incorporation of Cu Acceptors in ZnO Nanocrystals

    SciTech Connect

    Oo, W.M.H.; Mccluskey, Matthew D.; Huso, Jesse; Morrison, J.; Bergman, Leah; Engelhard, Mark H.; Saraf, Laxmikant V.

    2010-09-16

    Doping of semiconductor nanocrystals is an important problem in nanomaterials research. Using infrared (IR) and x-ray photoelectron spectroscopy (XPS), we have observed Cu acceptor dopants that were intentionally introduced into ZnO nanocrystals. The incorporation of Cu2+ dopants increased as the diameter of the nanocrystals was increased from ~3 to 5 nm. Etching the nanocrystals with acetic acid revealed a core-shell structure, where a 2-nm lightly doped core is surrounded by a heavily doped shell. These observations are consistent with the trapped dopant model, in which dopant atoms stick to the surface of the core and are overgrown by the nanocrystal material.

  7. Picosecond dynamics of photoexcited carriers in interacting silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Kořínek, Miroslav; Trojánek, František; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Kübel, Christian; Malý, Petr

    2016-07-01

    The non-radiative Auger carrier recombination plays an important role in physics and the application of semiconductor nanocrystals. Here we report on the effect of inter-nanocrystal carrier interaction on Auger recombination. We prepared a special set of samples containing silicon nanocrystals embedded in silicon oxide with well-defined geometry. The picosecond carrier recombination rate measured by femtosecond pump and probe technique was found to be strongly dependent on the inter-nanocrystal separation. The observed decrease of the decay rate with nanocrystal separation on the nanometer scale is interpreted in terms of the wave function overlap appearing in the relevant matrix element describing the recombination process.

  8. Influence of the electron-phonon interaction on the temperature dependence of the phonon mode frequency in the II-VI compound solid solutions

    SciTech Connect

    Woźny, M. Cebulski, J.; Sheregii, E. M.; Marcelli, A.; Piccinini, M.

    2015-01-14

    We present an experimental investigation of the temperature dependence of the TO-phonon mode frequencies for the HgTe-based II-VI semiconductor solid solutions. In the case of the ternary Hg{sub 0.9}Zn{sub 0.1}Te solid solution was shown a discontinuity in the temperature dependence of the HgTe-like T{sub 0}-mode and of the ZnTe-like T{sub 1}-mode, similar to the Hg{sub 0.85}Cd{sub 0.15}Te system [Sheregii et al., Phys. Rev. Lett. 102, 045504 (2009)]. A generalization of the theoretical temperature shift of the phonon mode frequency as analytic equation is derived that includes both the anharmonic contribution and the electron-phonon e-p interaction which in this case is returnable—the electron subsystem effect on the phonon one. Data show that our equation satisfactorily describes the temperature shift of both Hg{sub 0.85}Cd{sub 0.15}Te and Hg{sub 0.90}Zn{sub 0.10}Te containing Dirac point (E{sub g} ≡ Γ{sub 6} – Γ{sub 8} = 0) although one of the two constants describing the anharmonic shift of the HgTe-like mode should be positive what is abnormal too. In the case of the Hg{sub 0.80}Cd{sub 0.20}Te and Hg{sub 0.763}Zn{sub 0.237}Te solid solution, the role of the returnable e-p contribution is negligible but a positive temperature shift for the HgTe-like modes occurs. This result does not allow to explain the positive temperature shift of these modes merely by the contribution of the (e-p) interaction. Indeed, the relativistic contribution to the chemical bonds induces an abnormal temperature shift of the electron states in Hg-based semiconductors—the effect is expected since the Hg d spin-orbit split contribution to chemical bonds may lead to an abnormal temperature shift of the HgTe-like modes.

  9. Size-Dependent Raman Shifts for nanocrystals

    PubMed Central

    Gao, Yukun; Zhao, Xinmei; Yin, Penggang; Gao, Faming

    2016-01-01

    Raman spectroscopy is a very sensitive tool for probing semiconductor nanocrystals. The underlying mechanism behind the size-dependent Raman shifts is still quite controversial. Here we offer a new theoretical method for the quantum confinement effects on the Raman spectra of semiconductor nanocrystals. We propose that the shift of Raman spectra in nanocrystals can result from two overlapping effects: the quantum effect shift and surface effect shift. The quantum effect shift is extracted from an extended Kubo formula, the surface effect shift is determined via the first principles calculations. Fairly good prediction of Raman shifts can be obtained without the use of any adjustable parameter. Closer analysis shows that the size-dependent Raman shifts in Si nanocrystals mainly result from the quantum effect shifts. For nanodiamond, the proportion of surface effect shift in Raman shift is up to about 40%. Such model can also provide a good baseline for using Raman spectroscopy as a tool to measure size. PMID:27102066

  10. Control of physical and optical properties of II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Sooklal, Kelly Sonja

    This thesis primarily concentrates on two semiconductors, CdS and ZnS, both of which have been widely used in the fabrication of electrical devices. Nanoparticles of CdS and ZnS have both been prepared using a variety of synthetic methods. These "quantum confined" particles exhibit a wide range of size dependent properties which can be modified by either altering their size and/or surface chemistry. In one set of experiments, it was found that the location of Mn 2+ profoundly affects the photophysics of ZnS nanoclusters. Mn 2+ substituted for Zn2+ in the ZnS lattice produced orange emission with lifetimes that were intermediate between those found for micron clusters and smaller nanoclusters. The addition of Mn2+ to the outside of the preformed ZnS nanoclusters showed near-band gap emission in the ultraviolet with even shorter lifetimes. We have also used these Mn2+ doped nanoclusters to fabricate electroluminescent devices. In another set of experiments, the effects of different ions on the photophysics of ZnS nanoclusters was investigated. Depending on the cation, we have been able to produce ZnS nanoclusters that emit in the blue, green, yellow and orange regions of the visible spectrum by incorporating Cu2+, Pb2+ and Mn2+. Quantum dots of CdS have also been prepared using several different stabilizing agents. CdS nanoparticles that have been synthesized using dendrimers as hosts exhibit striking optical and electronic features. Intense blue-green emission is observed when the CdS-dendrimer nanocomposites are formed in methanol and/or acidified methanol solutions. Bright yellow emission is observed when the semiconductor-dendrimer nanocomposites are prepared in water and/or basic methanol solutions. One additional experiment was performed using capping groups to modify the photophysics of CdS. Nanometer-sized CdS were prepared using a series of 4-substituted thiophenols as capping agents. The 4-substituents included both electron-donating and electron

  11. Ground state of the holes localized in II-VI quantum dots with Gaussian potential profiles

    NASA Astrophysics Data System (ADS)

    Semina, M. A.; Golovatenko, A. A.; Rodina, A. V.

    2016-01-01

    We report on a theoretical study of the hole states in II-IV quantum dots of spherical and ellipsoidal shapes, described by smooth potential confinement profiles that can be modeled by Gaussian functions in all three dimensions. The universal dependencies of the hole energy, g factor, and localization length on the quantum dot barrier height, as well as the ratio of effective masses of the light and heavy holes are presented for the spherical quantum dots. The splitting of the fourfold degenerate ground state into two doublets is derived for anisotropic (oblate or prolate) quantum dots. Variational calculations are combined with numerical ones in the framework of the Luttinger Hamiltonian. Constructed trial functions are optimized by comparison with the numerical results. The effective hole g factor is found to be independent of the quantum dot size and barrier height and is approximated by a simple universal expression depending only on the effective mass parameters. The results can be used for interpreting and analyzing experimental spectra measured in various structures with quantum dots of different semiconductor materials.

  12. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-01

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells. PMID:24452695

  13. Synthesis of Colloidal Nanocrystal Heterostructures for High-Efficiency Light Emission

    NASA Astrophysics Data System (ADS)

    Lu, Yifei

    Group II-VI semiconductor nanocrystals, particularly those based on ZnCdS(Se), can be synthesized using well established chemical colloidal processes, and have been a subject of extensive research over the past decade. Their optical properties can be easily tuned through size and composition variations, making them very attractive for many optoelectronic applications including light-emitting diodes (LEDs) and solar cells. Incorporation of diverse internal heterostructures provides an additional means for tuning the optical and electronic properties of conventional ZnCdS(Se) nanocrystals. Extensive bandgap and strain engineering may be applied to the resultant nanocrystal heterostructures to achieve desirable properties and enhanced performance. Despite the high scientific and practical interests of this unique class of nanomaterials, limited efforts have been made to explore their synthesis and potential device applications. This thesis focuses on the synthesis, engineering, characterization, and device demonstration of two types of CdSe-based nanocrystal heterostructures: core/multishell quantum dots (QDs) and QD quantum wells (QDQWs). Their optical properties have been tuned by bandgap and strain engineering to achieve efficient photoluminescence (PL) and electroluminescence (EL).Firstly, yellow light-emitting CdSe QDs with a strain-compensated ZnS/ZnCdS bilayer shell were synthesized using the successive ion layer adsorption and reaction technique and the effects of the shell on the luminescent properties were investigated. The core/shell/shell QDs enjoyed the benefits of excellent exciton confinement by the ZnS intermediate shell and strain compensation by the ZnCdS outer shell, and exhibited 40% stronger PL and a smaller peak redshift upon shell growth compared to conventional CdSe/ZnCdS/ZnS core/shell/shell QDs with an intermediate lattice adaptor. CdSe/ZnS/ZnCdS QD-LEDs had a luminance of 558 cd/m2 at 20 mA/cm 2, 28% higher than that of CdSe/ZnCdS/ZnS QD

  14. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGESBeta

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  15. The Surface Chemistry of Metal Chalcogenide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Anderson, Nicholas Charles

    The surface chemistry of metal chalcogenide nanocrystals is explored through several interrelated analytical investigations. After a brief discussion of the nanocrystal history and applications, molecular orbital theory is used to describe the electronic properties of semiconductors, and how these materials behave on the nanoscale. Quantum confinement plays a major role in dictating the optical properties of metal chalcogenide nanocrystals, however surface states also have an equally significant contribution to the electronic properties of nanocrystals due to the high surface area to volume ratio of nanoscale semiconductors. Controlling surface chemistry is essential to functionalizing these materials for biological imaging and photovoltaic device applications. To better understand the surface chemistry of semiconducting nanocrystals, three competing surface chemistry models are presented: 1.) The TOPO model, 2.) the Non-stoichiometric model, and 3.) the Neutral Fragment model. Both the non-stoichiometric and neutral fragment models accurately describe the behavior of metal chalcogenide nanocrystals. These models rely on the covalent bond classification system, which divides ligands into three classes: 1.) X-type, 1-electron donating ligands that balance charge with excess metal at the nanocrystal surface, 2.) L-type, 2-electron donors that bind metal sites, and 3.) Z-type, 2-electron acceptors that bind chalcogenide sites. Each of these ligand classes is explored in detail to better understand the surface chemistry of metal chalcogenide nanocrystals. First, chloride-terminated, tri-n-butylphosphine (Bu 3P) bound CdSe nanocrystals were prepared by cleaving carboxylate ligands from CdSe nanocrystals with chlorotrimethylsilane in Bu3P solution. 1H and 31P{1H} nuclear magnetic resonance spectra of the isolated nanocrystals allowed assignment of distinct signals from several free and bound species, including surface-bound Bu3P and [Bu3P-H]+[Cl]- ligands as well as a Bu

  16. Infrared colloidal lead chalcogenide nanocrystals: synthesis, properties, and photovoltaic applications.

    PubMed

    Fu, Huiying; Tsang, Sai-Wing

    2012-04-01

    Simple solution phase, catalyst-free synthetic approaches that offer monodispersed, well passivated, and non-aggregated colloidal semiconductor nanocrystals have presented many research opportunities not only for fundamental science but also for technological applications. The ability to tune the electrical and optical properties of semiconductor nanocrystals by manipulating the size and shape of the crystals during the colloidal synthesis provides potential benefits to a variety of applications including photovoltaic devices, light-emitting diodes, field effect transistors, biological imaging/labeling, and more. Recent advances in the synthesis and characterization of colloidal lead chalcogenide nanocrystals and the achievements in colloidal PbS or PbSe nanocrystals solar cells have demonstrated the promising application of infrared-emitting colloidal lead chalcogenide nanocrystals in photovoltaic devices. Here, we review recent progress in the synthesis and optical properties of colloidal lead chalcogenide nanocrystals. We focus in particular upon the size- and shape-controlled synthesis of PbS, PbSe, and PbTe nanocrystals by using different precursors and various stabilizing surfactants for the growth of the colloidal nanocrystals. We also summarize recent advancements in the field of colloidal nanocrystals solar cells based on colloidal PbS and PbSe nanocrystals. PMID:22382898

  17. Spectral sensitivity of p-Cu{sub 1.8}S/n{sup -}-ZnS/n-(II-VI) heterostructures

    SciTech Connect

    Komaschenko, V. N. Kolezhuk, K. V.; Yaroshenko, N. V.; Sheremetova, G. I.; Bobrenko, Yu. N.

    2006-03-15

    Photosensitivity of multilayered p-Cu{sub 1.8}S/n{sup -}-(II-VI)/n-(II-VI) heterostructures beyond the fundamental-absorption edge of the wide-gap component is studied experimentally, and a simple model is suggested as an explanation of this photosensitivity. It is established that an effective method for reducing the photosensitivity of the structures beyond the ultraviolet spectral region consists in decreasing the probability of dominant tunneling processes, by increasing the thickness of the wide-gap layer, giving rise to a blocking barrier for photogenerated minority charge carriers. It is shown that the p-Cu{sub 1.8}S/n{sup -}-ZnS/n-CdSe heterostructures are promising for the development of efficient 'solar-blind' detectors of ultraviolet radiation.

  18. Vibrational properties and phase transitions in II-VI materials: lattice dynamics, ab initio studies and inelastic neutron scattering measurements.

    PubMed

    Basak, Tista; Rao, Mala N; Gupta, M K; Chaplot, S L

    2012-03-21

    Inelastic neutron scattering measurements were carried out to determine the phonon density of states of ZnSe and interpreted with lattice dynamical computations (ab initio as well as a potential model). Calculations are also reported for other II-VI compounds, ZnTe and ZnS. Vibrational (phonon spectra and Grüneisen parameters), and thermal (negative thermal expansion and non-Debye specific heat) properties have been calculated and found to be in good agreement with available experimental data. This model has been further employed to study the pressure-induced solid-solid phase transitions exhibited by these compounds and the results have been compared with experimental data. Total energy calculations for zincblende and SC16 phases of ZnSe were carried out employing the pseudopotential approach under the local density approximation (LDA) as well as the generalized gradient approximation (GGA). The density functional perturbation theory is applied to study the vibrational properties of the zincblende and SC16 phases of ZnSe. An investigation of the pressure dependence of the phonon frequencies shows that the existence of the (experimentally undetected) SC16 phase as a thermodynamically stable high pressure phase is impeded due to dynamical instabilities. A detailed investigation of the polarization of phonons of different energies for the various phases of these compounds indicates that in the case of the zincblende phase the low energy modes are librational, while in the rocksalt phase the low energy modes are bending modes. Further, in ZnTe the low energy bending modes display a larger amplitude of bending than that in ZnSe and ZnS. PMID:22354098

  19. Computational structural investigation of select II-VI compounds and radtkeite (alpha-mercury(3) sulfur(2) chlorine iodine)

    NASA Astrophysics Data System (ADS)

    Sellepack, Steven Matthew

    2000-12-01

    Computational modeling of novel materials is an increasingly powerful tool being used in the development of advanced materials and their device applications. This course of study has been undertaken to discern: (1) the present state of computational simulation of materials; (2) the present ability of computational hardware and software to model new materials; and (3) the ability to apply computational modeling to a relatively poorly studied solid state system, namely mercury(II) chalcogenide halides. Initial interest in this system was fostered by the reported tubular growth of radtkeite (alpha-Hg3S2ClI), which can display a tubular crystal habit tens of micrometers long and micrometers in diameter. To validate that the structures and energies of mercury(II) chalcogenides could be accurately modeled the pressure induced phase transitions in the HgS system were studied using ab initio DF (density functional) calculations. Select MS (M = Ca, Ba, Zn, Cd, Hg, S) compounds were modeled in the cinnabar and zinc-blende structures to discern that they could be accurately modeled. A qualitative description of the MS compounds in the cinnabar structure is provided along with reasoning concerning their relative stability. Three possible radtkeite structures were identified using a brute force methodology of powder x-ray diffraction pattern simulation and then modeled using A initio DF calculations. The cell based upon the gamma-Hg3S 2Cl2 structure was deemed as the best match. This study has validated that computational methods can be used for structural prediction of mercury(II) chalcogenides and chalcogenide halides, however certain methods produced unacceptable results. Materials application statement. This study seeks to discern halogen interactions within II--VI semiconducting materials, namely the mercury(II) chalcogenides. The strategy and methodology of the research will be to invoke computer simulations. The ultimate goal being the correlation of atomic to bulk scale

  20. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2010-06-22

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  1. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2007-08-28

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  2. Patterning nanocrystals using DNA

    SciTech Connect

    Williams, Shara Carol

    2003-09-01

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made.[1] Here, we have sought to assemble larger and more complex nanostructures. Gold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure [2][3] that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA ''trimer.'' This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices to a length greater than

  3. Mn-based ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Sawicki, Maciej

    2003-07-01

    The present status of research and prospects for device applications of ferromagnetic (diluted magnetic) semiconductors (DMS) is presented. We review the nature of the electronic states and the mechanisms of the carrier-mediated exchange interactions (mean-field Zener model) in p-type Mn-based III-V and II-VI compounds, highlighting a good correspondence of experimental findings and theoretical predictions. An account of the latest progress on the road of increasing the Currie point to above the room temperature is given for both families of compounds. We comment on a possibility of obtaining ferromagnetism in n-type materials, taking (Zn,Mn)O:Al as the example. Concerning technologically important issue of easy axis and domain engineering, we present theoretical predictions and experimental results on the temperature and carrier concentration driven change of magnetic anisotropy in (Ga,Mn)As.

  4. Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

    SciTech Connect

    Hughes, Steven Michael

    2007-01-01

    The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

  5. Colloidal inorganic nanocrystals: Nucleation, growth and biological applications

    NASA Astrophysics Data System (ADS)

    Lynch, Jared James

    Colloidal inorganic nanocrystals are a class of material whose size ranges from a few nanometers to a hundred nanometers in dimension. These nanocrystals have size dependent properties that differ significantly from the bulk material counterparts. Due to their unique physical properties colloidal inorganic nanocrystals have several promising applications in a diverse range of areas, such as biomedical diagnosis, catalysis, plasmonics, high-density data storage and solar energy conversion. This dissertation presents the study of the formation of iron oxide nanocrystals under the influence of solvent and Ar gas bubbles, the phase transfer of metal oxide nanocrystals into water using inorganic ions, and the doping of semiconductor CdS/ZnS core/shell nanocrystals with copper and silver ions. First, the formation of iron oxide nanocrystals is investigated in the presence of boiling solvent or Ar bubbles. Using a non-injection based synthesis method, the thermal decomposition of iron oleate was studied under various reaction conditions, and the role of the bubbles on the nucleation and growth of iron oxide nanocrystals was determined. Kinetics studies were used to elucidate how latent heat transfer from the bubbles allows for "active monomers" to form preferentially from exothermic reactions taking place during nucleation. General insights into colloidal inorganic nanocrystal formation are discussed. Second, a non-injection based synthesis for CdS/ZnS core/shell nanocrystals is used to make high quality semiconductor particles which are intentionally doped with Cu or Ag ions. The Ag ions effect on the optical properties of the CdS/ZnS nanocrystals is investigated. The absorption and fluorescence of the samples is measured as a function of time and temperature. Proposed mechanisms for the observations are given and thoroughly discussed. Comparisons between previous results for Cu doped CdS/ZnS nanocrystals are also made to further understand how doping of semiconductor

  6. Synthesis and investigation of optical properties of TOPO-capped CuInS{sub 2} semiconductor nanocrystal in the presence of different solvent

    SciTech Connect

    Asgary, Saeid; Mirabbaszadeh, Kavoos; Nayebi, Payman; Emadi, Hamid

    2014-03-01

    Graphical abstract: - Highlights: • TOPO-capped CuInS{sub 2} nanoparticles were synthesized by injection method. • Pure CuInS{sub 2} nanoparticle was obtained by injection in 200 °C. • The size, shape and optical properties of products were controlled. • Nanoparticles with size smaller than 10 nm and wurtzite phase was obtained. • The absorption and PL spectra of CuInS{sub 2} nanoparticles were tunable. - Abstract: In this work, synthesis of CuInS{sub 2} semiconductor nanoparticles by thermolysis of a mixed solution of CuAc, In(Ac){sub 3} and DDT in coordinating solvent and trioctylphosphine oxide (TOPO) as ligand was developed. CuInS{sub 2} nanoparticles with size of −10 nm and nanorods were obtained and optical properties controlled by adjusting the reaction parameters such as temperature and time. Also the shape of nanoparticles was controlled by various solvents elaborately. The as-prepared nanoparticles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM), UV–vis absorption, and photoluminescence (PL) spectroscopy. With the use of different solvent different morphology obtained. In the presence of oleylamine/octadecene rectangle-like nanorods obtained while with the use of oleic acid sphere-like nanoparticles achieved.

  7. Molecular Model for the Radiative Dipole Strengths and Lifetimes of the Fluorescent Levels of Mn2+and Fe3+ in II-VI And III-V Compounds

    NASA Astrophysics Data System (ADS)

    Parrot, R.; Boulanger, D.

    2005-06-01

    A molecular model is used to give an overall semi-phenomenological interpretation of the radiative transition probabilities (RTP) or radiative lifetimes (RL) of Mn2+ and Fe3+ in II-VI and III-V compounds. It is shown that the RTP's are primarily controlled by: (i) the mixing of the wavefunctions of the cation and of the ligands (ii) the molecular spin-orbit interaction which involves the spin-orbit coupling constants ζd of the d electrons of the cation and ζp of the p electrons of the ligands and (iii) the energies of the intermediate levels which appear in the perturbation model.

  8. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  9. Lead sulphide nanocrystal photodetector technologies

    NASA Astrophysics Data System (ADS)

    Saran, Rinku; Curry, Richard J.

    2016-02-01

    Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

  10. Donor level of interstitial hydrogen in semiconductors: Deep level transient spectroscopy

    NASA Astrophysics Data System (ADS)

    Kolkovsky, Vl.; Dobaczewski, L.; Nielsen, K. Bonde; Kolkovsky, V.; Larsen, A. Nylandsted; Weber, J.

    2009-12-01

    The behaviour of hydrogen in crystalline semiconductors has attracted considerable interest during several decades. Due to its high diffusion rate and ability to react with a wide variety of lattice imperfections such as intrinsic point defects, impurities, interfaces and surfaces, hydrogen is an impurity of fundamental importance in semiconductor materials. It has been already evidenced in previous investigations that the most fundamental hydrogen-related defects in-group IV semiconductors are interstitial hydrogen atoms occupying the bond-centre site ( BC) or the interstitial tetrahedral site ( T). Using first-principles calculations Van de Walle predicted similar properties of isolated hydrogen in other II-VI and III-V semiconductors. Another interesting prediction shown in that work was the existence of a universal alignment for the hydrogen electronic (-/+) level. Until now there is no direct experimental information regarding the individual isolated hydrogen states in compound semiconductors and most reported properties have been inferred indirectly. In the present work in-situ conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques are used to analyse hydrogen-related levels after low-temperature proton implantation in different II-VI and III-V semiconductors including GaAs, ZnO and CdTe. From these experimental observations the donor level of isolated hydrogen is found to keep almost a constant value in the absolute energy scale taking into account different band-offsets calculated for the whole group of semiconductors.

  11. Device Concepts in Semiconductor Spintronics

    NASA Astrophysics Data System (ADS)

    Molenkamp, Laurens W.

    Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices will be covered. For example, I will discuss resonant tunneling diodes (RTDs) fabricated from paramagnetic II-VI semiconductors that can be operated as a voltage controlled spin-switch. A quantum dot version of these RTDs exhibits, unexpectedly, remanent magnetism at zero external field, which we interpret as resulting from tunneling through a single magnetic polaron. In the ferromagnetic semiconductor (Ga, Mn)As we have observed a very large spin valve effect due to domain wall pinning at sub-10 nm sized constrictions. Furthermore, we have found a novel magnetoresistance effect in this material, dubbed tunnel anisotropic magnetoresistance (TAMR), which is due to the strongly (magneto-)anisotropic density of states in a ferromagnetic semiconductor. The effect leads to the observation of a spin valve-like behavior in tunnel structures containg a single ferromagnetic layer and also dominates the spin-valve signal obtained from structures containing two (Ga, Mn)As layers, where the effect may cause resistance changes of five orders of magnitude. Note from Publisher: This article contains the abstract only.

  12. Vacancy formation and extraction energies in semiconductor compounds and alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.

    1990-01-01

    A model for calculating the extraction energies and vacancy-formation energies in diamond-cubic and zinc-blende semiconductors is developed on the basis of Harrison's (1980, 1983) tight-binding theory. The extraction energies provide a reference from which other final states of the removed atoms can be calculated. The results of calculations show that, in a given compound, the calculated extraction energies are larger for the anion than for the cation, with the difference between the cation and the anion being larger in the II-VI than in the III-V compounds. This is in agreement with experimental results.

  13. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  14. Plasmonic engineering of spontaneous emission from silicon nanocrystals

    PubMed Central

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells. PMID:24037020

  15. Evolution of excitonic states in two-phase systems with quantum dots of II-VI semiconductors near the percolation threshold

    NASA Astrophysics Data System (ADS)

    Bondar, N. V.; Brodyn, M. S.

    2010-03-01

    In two-phase disordered media composed of borosilicate glass with ZnSe or CdS quantum dots, the formation of a phase percolation transition of carriers for near-threshold concentrations that are manifested in optical spectra has been observed. Microscopic fluctuations of the quantum-dot density near the percolation threshold were found that resembled the phenomenon of critical opalescence, where similar fluctuations of the density of a pure substance appear near to a phase transition. It is proposed that the dielectric mismatch between a matrix and ZnSe or CdS quantum dots plays a significant role in the carrier (exciton) delocalization, resulting in the appearance of a “dielectric Coulomb trap” beyond the QD border and the formation of surface states of excitons. The spatial overlapping of excitonic states at the critical density of quantum dots results in a tunneling of carriers and the formation of a phase percolation transition in such media.

  16. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  17. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  18. From ligands to binding motifs and beyond; the enhanced versatility of nanocrystal surfaces.

    PubMed

    De Roo, J; De Keukeleere, K; Hens, Z; Van Driessche, I

    2016-09-14

    Surface chemistry bridges the gap between nanocrystal synthesis and their applications. In this respect, the discovery of complex ligand binding motifs on semiconductor quantum dots and metal oxide nanocrystals opens a gateway to new areas of research. The implications are far-reaching, from catalytic model systems to the performance of solar cells. PMID:27461488

  19. Potentiometric Titrations for Measuring the Capacitance of Colloidal Photodoped ZnO Nanocrystals.

    PubMed

    Brozek, Carl K; Hartstein, Kimberly H; Gamelin, Daniel R

    2016-08-24

    Colloidal semiconductor nanocrystals offer a unique opportunity to bridge molecular and bulk semiconductor redox phenomena. Here, potentiometric titration is demonstrated as a method for quantifying the Fermi levels and charging potentials of free-standing colloidal n-type ZnO nanocrystals possessing between 0 and 20 conduction-band electrons per nanocrystal, corresponding to carrier densities between 0 and 1.2 × 10(20) cm(-3). Potentiometric titration of colloidal semiconductor nanocrystals has not been described previously, and little precedent exists for analogous potentiometric titration of any soluble reductants involving so many electrons. Linear changes in Fermi level vs charge-carrier density are observed for each ensemble of nanocrystals, with slopes that depend on the nanocrystal size. Analysis indicates that the ensemble nanocrystal capacitance is governed by classical surface electrical double layers, showing no evidence of quantum contributions. Systematic shifts in the Fermi level are also observed with specific changes in the identity of the charge-compensating countercation. As a simple and contactless alternative to more common thin-film-based voltammetric techniques, potentiometric titration offers a powerful new approach for quantifying the redox properties of colloidal semiconductor nanocrystals. PMID:27444048

  20. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

    PubMed

    Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

    2013-03-26

    We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency. PMID:23368728

  1. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

    1998-01-01

    Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

  2. Growth of platinum nanocrystals

    SciTech Connect

    2009-01-01

    Movie showing the growth of platinum nanocrystals in a liquid cell observed in situ using the JEOL 3010 TEM at the National Center for Electron Microscopy. This is the first ever-real time movie showing nucleation and growth by monomer attachment or by smaller nanocrystals coalescing to form larger nanocrystals. All the nanocrystals end up being roughly the same shape and size. http://newscenter.lbl.gov/feature-stories/2009/08/04/growth-spurts/

  3. Colloidal Nanocrystals Fluoresced by Surface Coordination Complexes

    PubMed Central

    Wang, Guan; Ji, Jianwei; Zhang, Xinwen; Zhang, Yan; Wang, Qiangbin; You, Xiaozeng; Xu, Xiangxing

    2014-01-01

    Colloidal Nanocrystals (NCs) with fluorescence originating from surface complexes are successfully prepared. The components of these NCs range from insulator, semiconductor to metal, with either pure phase, doped or core/shell structures. The photoluminescence of these NCs can be reversibly tuned across the visible to infrared spectrum, and even allow multi-color emission. A light emitting device is fabricated and a new in vivo cell imaging method is performed to demonstrate the power of this technology for emerging applications. PMID:24970242

  4. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign. PMID:15665836

  5. Fabrication and electronic transport studies of single nanocrystal systems

    SciTech Connect

    Klein, D L

    1997-05-01

    Semiconductor and metallic nanocrystals exhibit interesting electronic transport behavior as a result of electrostatic and quantum mechanical confinement effects. These effects can be studied to learn about the nature of electronic states in these systems. This thesis describes several techniques for the electronic study of nanocrystals. The primary focus is the development of novel methods to attach leads to prefabricated nanocrystals. This is because, while nanocrystals can be readily synthesized from a variety of materials with excellent size control, means to make electrical contact to these nanocrystals are limited. The first approach that will be described uses scanning probe microscopy to first image and then electrically probe surfaces. It is found that electronic investigations of nanocrystals by this technique are complicated by tip-sample interactions and environmental factors such as salvation and capillary forces. Next, an atomic force microscope technique for the catalytic patterning of the surface of a self assembled monolayer is described. In principle, this nano-fabrication technique can be used to create electronic devices which are based upon complex arrangements of nanocrystals. Finally, the fabrication and electrical characterization of a nanocrystal-based single electron transistor is presented. This device is fabricated using a hybrid scheme which combines electron beam lithography and wet chemistry to bind single nanocrystals in tunneling contact between closely spaced metallic leads. In these devices, both Au and CdSe nanocrystals show Coulomb blockade effects with characteristic energies of several tens of meV. Additional structure is seen the transport behavior of CdSe nanocrystals as a result of its electronic structure.

  6. Electron states in semiconductor quantum dots

    SciTech Connect

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  7. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  8. X-ray photoelectron spectroscopy of CdSe nanocrystals with applications to studies of the nanocrystal surface

    SciTech Connect

    Katari, J.E.B. ); Colvin, V.L.; Alivisatos, A.P. Univ. of California, Berkeley CA )

    1994-04-14

    We report the use of X-ray photoelectron spectroscopy (XPS) to determine the surface composition of semiconductor nanocrystals. Crystalline, nearly monodisperse CdSe nanocrystals ranging in radius from 9 to 30 A were chemically synthesized and covalently bound to Au and Si surfaces for study. XPS core level peak positions for Cd and Se were in agreement with those of bulk CdSe. We have determined that the majority of Se atoms on the surface are unbonded as prepared and that Cd atoms are bonded to the surface ligand, tri-n-octylphosphine oxide, to the extent that such bonding is sterically allowed. We have determined that the total ligand saturation of the nanocrystal surface varies from 60% in the smaller nanocrystals to 30% in the larger nanocrystals. In addition, we have determined that upon exposure of the nanocrystals to air Se surface sites are oxidized, forming a SeO[sub 2] surface film which causes the nanocrystals to degrade over time. The nanocrystal surface can be modified by dispersing the crystals in pyridine. Nearly all of the P ligands are removed in this case, leaving behind primarily unsaturated Cd and Se surface atoms. In this case, both Cd and Se oxidize upon exposure to air. 35 refs., 17 figs., 1 tab.

  9. Z-Contrast STEM Imaging and EELS of CdSe Nanocrystals: Towards the Analysis of Individual Nanocrystal Surfaces

    SciTech Connect

    Erwin, M.; Kadavanich, A.V.; Kippeny, T.; Pennycook, S.J.; Rosenthal, S.J.

    1999-04-05

    We have applied Atomic Number Contract Scanning Transmission Electron Microscopy (Z-Contrast STEM) and STEM/EELS (Electron Energy Loss Spectroscopy) towards the study of colloidal CdSe semiconductor nanocrystals embedded in MEH-PPV polymer films. Unlike the case of conventional phase-contrast High Resolution TEM, Z-Contrast images are direct projections of the atomic structure. Hence they can be interpreted without the need for sophisticated image simulation and the image intensity is a direct measure of the thickness of a nanocrystal. Our thickness measurements are in agreement with the predicted faceted shape of these nanocrystals. Our unique 1.3A resolution STEM has successfully resolve3d the sublattice structure of these CdSe nanocrystals. In [010] projection (the polar axis in the image plane) we can distinguish Se atom columns from Cd columns. Consequently we can study the effects of lattice polarity on the nanocrystal morphology. Furthermore, since the STEM technique does not rely on diffraction, it is superbly suited to the study of non-periodic detail, such as the surface structure of the nanocrystals. EELS measurements on individual nanocrystals indicate a significant amount (equivalet to 0.5-1 surface monolayers) of oxygen on the nanocrystals, despite processing in an inert atmosphere. Spatially resolved measurements at 7A resolution suggest a surface oxide layer. However, the uncertainty in the measurement precludes definitive assignment at this time. The source of the oxygen is under investigation as well.

  10. Property prediction of new semiconductors by computer modeling and simulation

    NASA Astrophysics Data System (ADS)

    Wu, Ping; Lin, Guo Q.; Zeng, Yingzhi

    2002-11-01

    A new methodology of systematic design of new materials for various applications is presented in this paper. In particular, a large number of candidate compounds that are formed by all possible combinations of the targeted elements in the periodic table are first screened and shortlisted by artificial neural network techniques. Then the quantum mechanics computation is employed to evaluate the promising candidates selected from the first step. Finally experiments are performed to further examine the computation results. In the present work, we apply this methodology to the study of semiconductors of binary (III-V and II-VI) and ternary (I-III-VI2 and II-IV-V2) compounds. Firstly, we systematically study all possible binary and ternary compounds by using pattern recognition and perform prediction of two important properties, namely band gap energy and lattice constant, with the artificial neural network model. Candidate semiconductors are then selected. On the basis of the above study, we perform first principles quantum mechanics computation for some promising II-VI binary candidates. The first principles study of the ternary candidates will be conducted in the near future, and the experiment study of the binary compounds is ongoing. The model predicted new compounds as well as the developed design methodology may be of interest to general materials scientists including these of smart materials research.

  11. Nanocrystal targeting in vivo

    NASA Astrophysics Data System (ADS)

    Åkerman, Maria E.; Chan, Warren C. W.; Laakkonen, Pirjo; Bhatia, Sangeeta N.; Ruoslahti, Erkki

    2002-10-01

    Inorganic nanostructures that interface with biological systems have recently attracted widespread interest in biology and medicine. Nanoparticles are thought to have potential as novel intravascular probes for both diagnostic (e.g., imaging) and therapeutic purposes (e.g., drug delivery). Critical issues for successful nanoparticle delivery include the ability to target specific tissues and cell types and escape from the biological particulate filter known as the reticuloendothelial system. We set out to explore the feasibility of in vivo targeting by using semiconductor quantum dots (qdots). Qdots are small (<10 nm) inorganic nanocrystals that possess unique luminescent properties; their fluorescence emission is stable and tuned by varying the particle size or composition. We show that ZnS-capped CdSe qdots coated with a lung-targeting peptide accumulate in the lungs of mice after i.v. injection, whereas two other peptides specifically direct qdots to blood vessels or lymphatic vessels in tumors. We also show that adding polyethylene glycol to the qdot coating prevents nonselective accumulation of qdots in reticuloendothelial tissues. These results encourage the construction of more complex nanostructures with capabilities such as disease sensing and drug delivery.

  12. X-ray studies of multilayer semiconductors using synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Huang, Shiwen

    X-ray scattering and absorption techniques utilizing synchrotron radiation have been used to study a variety of multilayer semiconductors. The angular-dependent x-ray scattering at grazing incidence angles (grazing incidence x-ray scattering, GIXS) provides structural information of interfaces in these materials, such as rms interfacial roughness, cross- and lateral-correlation lengths, etc. Long-range order structures in material are probed by large-angle scattering (x-ray diffraction), in which strain and lattice constant as well as crystallinity of the epilayers are measured. Local structural variations in materials including local bond length, coordination number, and local disorder are obtained quantitatively by examining the modulation in the x-ray absorption spectrum some 40 eV above the absorption edge (extended x-ray absorption fine structure, EXAFS). Materials studied in the present work are SiGe/Si heterostructures, MnAs/GaAs ferromagnetic-semiconductor films, solar cell films, ZnSe-based II-VI semiconductor thin films, InGaAs/GaAs and GaAs/AlAs superlattices. Results obtained have shown (i) evidence for strain-induced surface/interface morphology variations in SiGe/Si heterostructures, (ii) template-dependent microstructures in MnAs/GaAs, (iii) changes in interface structures for films of different formations in solar cell films, (iv) differences between samples prepared by different epitaxial growth methods in II-VI semiconductor films, (v) observation of lateral structural ordering in one of the InGaAs/GaAs superlattices, (vi) differences in interfacial microstructures between MBE-grown samples with different interrupts in GaAs/AlAs superlattices. Most of all, x- rays are found to be a very useful nondestructive tool for probing microscopic structures in various multilayer semiconductor materials.

  13. Nanocrystals and quantum dots formed by high-dose ion implantation

    SciTech Connect

    White, C.W.; Budai, J.D.; Zhu, J.G.; Withrow, S.P.; Hembree, D.M.; Henderson, D.O.; Ueda, A.; Tung, Y.S.; Mu, R.

    1996-01-01

    Ion implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO{sub 2}) and crystalline (Al{sub 2}O{sub 3}) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amorphous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

  14. Semiconductor nanorod liquid crystals

    SciTech Connect

    Li, Liang-shi; Walda, Joost; Manna, Liberato; Alivisatos, A. Paul

    2002-01-28

    Rodlike molecules form liquid crystalline phases with orientational order and positional disorder. The great majority of materials in which liquid crystalline phases have been observed are comprised of organic molecules or polymers, even though there has been continuing and growing interest in inorganic liquid crystals. Recent advances in the control of the sizes and shapes of inorganic nanocrystals allow for the formation of a broad class of new inorganic liquid crystals. Here we show the formation of liquid crystalline phases of CdSe semiconductor nanorods. These new liquid crystalline phases may have great importance for both application and fundamental study.

  15. Density functional theory based tight binding study on theoretical prediction of low-density nanoporous phases ZnO semiconductor materials

    NASA Astrophysics Data System (ADS)

    Tuoc, Vu Ngoc; Doan Huan, Tran; Viet Minh, Nguyen; Thi Thao, Nguyen

    2016-06-01

    Polymorphs or phases - different inorganic solids structures of the same composition usually have widely differing properties and applications, thereby synthesizing or predicting new classes of polymorphs for a certain compound is of great significance and has been gaining considerable interest. Herein, we perform a density functional theory based tight binding (DFTB) study on theoretical prediction of several new phases series of II-VI semiconductor material ZnO nanoporous phases from their bottom-up building blocks. Among these, three phases are reported for the first time, which could greatly expand the family of II- VI compound nanoporous phases. We also show that all these generally can be categorized similarly to the aluminosilicate zeolites inorganic open-framework materials. The hollow cage structure of the corresponding building block ZnkOk (k= 9, 12, 16) is well preserved in all of them, which leads to their low-density nanoporous and high flexibility. Additionally the electronic wide-energy gap of the individual ZnkOk is also retained. Our study reveals that they are all semiconductor materials with a large band gap. Further, this study is likely to be the common for II-VI semiconductor compounds and will be helpful for extending their range of properties and applications.

  16. Low temperature thin films formed from nanocrystal precursors

    DOEpatents

    Alivisatos, A.P.; Goldstein, A.N.

    1993-11-16

    Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.

  17. Low temperature thin films formed from nanocrystal precursors

    DOEpatents

    Alivisatos, A. Paul; Goldstein, Avery N.

    1993-01-01

    Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.

  18. A Post-synthetic Modification of II-VI Nanoparticles to Create Tb(3+) and Eu(3+) Luminophores.

    PubMed

    Mukherjee, Prasun; Sloan, Robin F; Shade, Chad M; Waldeck, David H; Petoud, Stéphane

    2013-07-11

    We describe a novel method for creating luminescent lanthanide-containing nanoparticles in which the lanthanide cations are sensitized by the semiconductor nanoparticle's electronic excitation. In contrast to previous strategies, this new approach creates such materials by addition of external salt to a solution of fully formed nanoparticles. We demonstrate this post-synthetic modification for the lanthanide luminescence sensitization of two visible emitting lanthanides (Ln), Tb(3+) and Eu(3+) ions, through ZnS nanoparticles in which the cations were added post-synthetically as external Ln(NO3)3·xH2O salt to solutions of ZnS nanoparticles. The post-synthetically treated ZnS nanoparticle systems display Tb(3+) and Eu(3+) luminescence intensities that are comparable to those of doped Zn(Ln)S nanoparticles, which we reported previously (J. Phys. Chem. A, 2011, 115, 4031-4041). A comparison with the synthetically doped systems is used to contrast the spatial distribution of the lanthanide ions, bulk versus surface localized. The post-synthetic strategy described in this work is fundamentally different from the synthetic incorporation (doping) approach and offers a rapid and less synthetically demanding protocol for Tb(3+):ZnS and Eu(3+):ZnS luminophores, thereby facilitating their use in a broad range of applications. PMID:23997842

  19. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  20. Study by ESI-FTICRMS and ESI-FTICRMS(n) of zinc and cadmium thiophenolate complexes used as precursors for the synthesis of II-VI nanosemiconductors.

    PubMed

    Arl, Didier; Aubriet, Frédéric; Gaumet, Jean-Jacques

    2009-05-01

    [M(4)(SC(6)H(5))(10)][(CH(3))N](2), [M(10)L(4)(SC(6)H(5))(16)][(CH(3))N](4) and [Cd(17)S(4)(SC(6)H(5))(28)][(CH(3))N](2)(M = Cd or Zn, and L = S or Se) zinc and cadmium thiophenolates have been studied by electrospray ionization (ESI) Fourier transform ion cyclotron resonance (FTICR) mass spectrometry (ESI-FTICRMS) and tandem ESI-FTICRMS (ESI-FTICRMS(n)). ESI-FTICRMS demonstrated its ability to characterize and study such compounds, which may be used as precursors of II-VI nanomaterials. The obtained mass spectrum has been found to be highly relevant of the investigated thiophenolate and the fragmentation behavior of some of the detected ions is indicative of its stability. More specifically, it has been demonstrated that ESI in-source activation or fragmentation experiments conducted in the Fourier transform ion cyclotron resonance mass spectrometry (FTICRMS) cell induced the formation of a very stable entity, which corresponds to the general formula M(4)L(4) (M = Zn or Cd and L = S or Se). The elimination of SC(6)H(5)(-) and/or M(SC(6)H(5))(2) moieties by various activation processes from the studied thiophenolates led systematically to this structure. PMID:19165817

  1. Multiexciton Generation in Nanocrystals and Nanorods

    NASA Astrophysics Data System (ADS)

    Rabani, Eran

    2014-03-01

    Multiexciton generation (MEG) is a process where several excitons are generated upon the absorption of a single photon in semiconductors. This process enjoys great technological ramifications for solar cells and other light harvesting technologies. For example, it is expected that the more charge carriers created shortly after the photon is absorbed, the larger fraction of the photon energy can successfully be converted into electricity, thus increasing the device efficiency. Strict selection rules and competing processes in the bulk allows MEG at energies of five times the band gap. It was suggested that nanocrystals, where quantum confinement effects are important, may exhibit MEG at lower values of (typically 2 to 3 times the band gap). Indeed, MEG in nanocrystals has been reported recently for several systems, showing that the threshold was size and band-gap independent. However, more recent studies have questioned the high efficiency of MEG in nanocrystals. In this talk we will discuss the process of MEG in semiconducting nanocrystals (NCs) and nanorods (NRs). A general theoretical framework will be presented and the limits of indirect absorption and impact ionization will be derived. The role of composition material, size, geometry and energy on the MEG efficiencies will be explored using a stochastic approach to calculate MEG with a numerical effort that scales linearly with system size.

  2. Chelating ligands for nanocrystals' surface functionalization.

    PubMed

    Querner, Claudia; Reiss, Peter; Bleuse, Joël; Pron, Adam

    2004-09-22

    A new family of ligands for the surface functionalization of CdSe nanocrystals is proposed, namely alkyl or aryl derivatives of carbodithioic acids (R-C(S)SH). The main advantages of these new ligands are as follows: they nearly quantitatively exchange the initial surface ligands (TOPO) in very mild conditions; they significantly improve the resistance of nanocrystals against photooxidation because of their ability of strong chelate-type binding to metal atoms; their relatively simple preparation via Grignard intermediates facilitates the development of new bifunctional ligands containing, in addition to the anchoring carbodithioate group, a second function, which enables the grafting of molecules or macromolecules of interest on the nanocrystal surface. To give an example of this approach, we report, for the first time, the grafting of an electroactive oligomer from the polyaniline family-aniline tetramer-on CdSe nanocrystals after their functionalization with 4-formyldithiobenzoic acid. The grafting proceeds via a condensation reaction between the aldehyde group of the ligand and the terminal primary amine group of the tetramer. The resulting organic/inorganic hybrid exhibits complete extinction of the fluorescence of its constituents, indicating efficient charge or energy transfer between the organic and the inorganic semiconductors. PMID:15366904

  3. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Brebrick, Robert F.; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

    2000-01-01

    Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

  4. Biomineralization: Nanocrystals by design

    NASA Astrophysics Data System (ADS)

    Shang, Li; Nienhaus, Gerd Ulrich

    2015-10-01

    Nanocrystals with precisely defined structures offer promise as components of advanced materials yet they are challenging to create. Now, a nanocrystal made up of seven cadmium and twelve chloride ions has been synthesized via a biotemplating approach that uses a de novo designed protein.

  5. Tunable catalytic alloying eliminates stacking faults in compound semiconductor nanowires.

    PubMed

    Heo, Hoseok; Kang, Kibum; Lee, Donghun; Jin, Li-Hua; Back, Hyeon-Jun; Hwang, Inchan; Kim, Miseong; Lee, Hyun-Seung; Lee, Byeong-Joo; Yi, Gyu-Chul; Cho, Yong-Hoon; Jo, Moon-Ho

    2012-02-01

    Planar defects in compound (III-V and II-VI) semiconductor nanowires (NWs), such as twin and stacking faults, are universally formed during the catalytic NW growth, and they detrimentally act as static disorders against coherent electron transport and light emissions. Here we report a simple synthetic route for planar-defect free II-VI NWs by tunable alloying, i.e. Cd(1-x)Zn(x)Te NWs (0 ≤ x ≤ 1). It is discovered that the eutectic alloying of Cd and Zn in Au catalysts immediately alleviates interfacial instability during the catalytic growth by the surface energy minimization and forms homogeneous zinc blende crystals as opposed to unwanted zinc blende/wurtzite mixtures. As a direct consequence of the tunable alloying, we demonstrated that intrinsic energy band gap modulation in Cd(1-x)Zn(x)Te NWs can exploit the tunable spectral and temporal responses in light detection and emission in the full visible range. PMID:22268369

  6. Optical activity of chirally distorted nanocrystals

    NASA Astrophysics Data System (ADS)

    Tepliakov, Nikita V.; Baimuratov, Anvar S.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2016-05-01

    We develop a general theory of optical activity of semiconductor nanocrystals whose chirality is induced by a small perturbation of their otherwise achiral electronic subsystems. The optical activity is described using the quantum-mechanical expressions for the rotatory strengths and dissymmetry factors introduced by Rosenfeld. We show that the rotatory strengths of optically active transitions are decomposed on electric dipole and magnetic dipole contributions, which correspond to the electric dipole and magnetic dipole transitions between the unperturbed quantum states. Remarkably, while the two kinds of rotatory strengths are of the same order of magnitude, the corresponding dissymmetry factors can differ by a factor of 105. By maximizing the dissymmetry of magnetic dipole absorption one can significantly enhance the enantioselectivity in the interaction of semiconductor nanocrystals with circularly polarized light. This feature may advance chiral and analytical methods, which will benefit biophysics, chemistry, and pharmaceutical science. The developed theory is illustrated by an example of intraband transitions inside a semiconductor nanocuboid, whose rotatory strengths and dissymmetry factors are calculated analytically.

  7. The influence of dopant distribution on the optoelectronic properties of tin-doped indium oxide nanocrystals and nanocrystal films

    NASA Astrophysics Data System (ADS)

    Lounis, Sebastien Dahmane

    Colloidally prepared nanocrystals of transparent conducting oxide (TCO) semiconductors have emerged in the past decade as an exciting new class of plasmonic materials. In recent years, there has been tremendous progress in developing synthetic methods for the growth of these nanocrystals, basic characterization of their properties, and their successful integration into optoelectronic and electrochemical devices. However, many fundamental questions remain about the physics of localized surface plasmon resonance (LSPR) in these materials, and how their optoelectronic properties derive from their underlying structural properties. In particular, the influence of the concentration and distribution of dopant ions and compensating defects on the optoelectronic properties of TCO nanocrystals has seen little investigation. Indium tin oxide (ITO) is the most widely studied and commercially deployed TCO. Herein we investigate the role of the distribution of tin dopants on the optoelectronic properties of colloidally prepared ITO nanocrystals. Owing to a high free electron density, ITO nanocrystals display strong LSPR absorption in the near infrared. Depending on the particular organic ligands used, they are soluble in various solvents and can readily be integrated into densely packed nanocrystal films with high conductivities. Using a combination of spectroscopic techniques, modeling and simulation of the optical properties of the nanocrystals using the Drude model, and transport measurements, it is demonstrated herein that the radial distribution of tin dopants has a strong effect on the optoelectronic properties of ITO nanocrystals. ITO nanocrystals were synthesized in both surface-segregated and uniformly distributed dopant profiles. Temperature dependent measurements of optical absorbance were first combined with Drude modeling to extract the internal electrical properties of the ITO nanocrystals, demonstrating that they are well-behaved degenerately doped semiconductors

  8. Pressure-induced phonon freezing in the ZnSeS II-VI mixed crystal: phonon-polaritons and ab initio calculations.

    PubMed

    Hajj Hussein, R; Pagès, O; Polian, A; Postnikov, A V; Dicko, H; Firszt, F; Strzałkowski, K; Paszkowicz, W; Broch, L; Ravy, S; Fertey, P

    2016-05-25

    Near-forward Raman scattering combined with ab initio phonon and bond length calculations is used to study the 'phonon-polariton' transverse optical modes (with mixed electrical-mechanical character) of the II-VI ZnSe1-x S x mixed crystal under pressure. The goal of the study is to determine the pressure dependence of the poorly-resolved percolation-type Zn-S Raman doublet of the three oscillator [1  ×  (Zn-Se), 2  ×  (Zn-S)] ZnSe0.68S0.32 mixed crystal, which exhibits a phase transition at approximately the same pressure as its two end compounds (~14 GPa, zincblende  →  rocksalt), as determined by high-pressure x-ray diffraction. We find that the intensity of the lower Zn-S sub-mode of ZnSe0.68S0.32, due to Zn-S bonds vibrating in their own (S-like) environment, decreases under pressure (Raman scattering), whereas its frequency progressively converges onto that of the upper Zn-S sub-mode, due to Zn-S vibrations in the foreign (Se-like) environment (ab initio calculations). Ultimately, only the latter sub-mode survives. A similar 'phonon freezing' was earlier evidenced with the well-resolved percolation-type Be-Se doublet of Zn1-x Be x Se (Pradhan et al 2010 Phys. Rev. B 81 115207), that exhibits a large contrast in the pressure-induced structural transitions of its end compounds. We deduce that the above collapse/convergence process is intrinsic to the percolation doublet of a short bond under pressure, at least in a ZnSe-based mixed crystal, and not due to any pressure-induced structural transition. PMID:27114448

  9. Prospects of nanoscience with nanocrystals

    DOE PAGESBeta

    Kovalenko, Maksym V.; Manna, Liberato; Cabot, Andreu; Hens, Zeger; Talapin, Dmitri V.; Kagan, Cherie R.; Klimov, Victor I.; Rogach, Andrey L.; Reiss, Peter; Milliron, Delia J.; et al

    2015-01-22

    Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. Furthermore, the performance of inorganic NC-based photovoltaic and lightemitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where verymore » few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In our Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.« less

  10. Prospects of nanoscience with nanocrystals

    SciTech Connect

    Kovalenko, Maksym V.; Manna, Liberato; Cabot, Andreu; Hens, Zeger; Talapin, Dmitri V.; Kagan, Cherie R.; Klimov, Victor I.; Rogach, Andrey L.; Reiss, Peter; Milliron, Delia J.; Guyot-Sionnnest, Philippe; Konstantatos, Gerasimos; Parak, Wolfgang J.; Hyeon, Taeghwan; Korgel, Brian A.; Murray, Christopher B.; Heiss, Wolfgang

    2015-01-22

    Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. Furthermore, the performance of inorganic NC-based photovoltaic and lightemitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In our Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.

  11. Passivation effects in B doped self-assembled Si nanocrystals

    SciTech Connect

    Puthen Veettil, B. Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Zhang, Tian; Yang, Terry; Johnson, Craig; Conibeer, Gavin; Perez-Würfl, Ivan; McCamey, Dane

    2014-12-01

    Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes.

  12. Frequency upconverted lasing of nanocrystal quantum dots in microbeads

    NASA Astrophysics Data System (ADS)

    Zhang, Chunfeng; Zhang, Fan; Cheng, An; Kimball, Brian; Wang, Andrew Y.; Xu, Jian

    2009-11-01

    Stable, frequency upconverted lasing of semiconductor nanocrystal quantum dots was demonstrated in silica microbeads under two-photon pumping conditions. Upon infrared excitation, the stimulated emission of the nanocrystal-doped microbeads exhibits sharp peaks at λ ˜610 nm with narrow line widths of ≤1 nm. The lasing action has been attributed to the biexciton gain coupled to the whispering gallery modes in spherical cavities, as confirmed by time-resolved photoluminescence spectra. The lasing lifetime characterized in term of pulse numbers (˜106 pulses) was two orders of magnitude longer than that of the dye salt-based two-photon lasers.

  13. Nonthermal plasma synthesis of metal sulfide nanocrystals from metalorganic vapor and elemental sulfur

    NASA Astrophysics Data System (ADS)

    Thimsen, Elijah; Kortshagen, Uwe R.; Aydil, Eray S.

    2015-08-01

    Nanocrystal synthesis in nonthermal plasmas has been focused on elemental group IV semiconductors such as Si and Ge. In contrast, very little is known about plasma synthesis of compound nanocrystals and the time is ripe to extend this synthesis approach to nanocrystals comprised of two or more elements such as metal sulfides, oxides and nitrides. Towards this end, we studied, in an argon-sulfur plasma, the synthesis of ZnS, Cu2S and SnS nanocrystals from metalorganic precursors diethyl Zn(II), hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane, and tetrakis(dimethylamido) Sn(IV), respectively. In situ optical emission spectroscopy was used to observe changes in relative concentrations of various plasma species during synthesis, while ex situ material characterization was used to examine the crystal structure, elemental composition and optical absorption of these nanocrystals. For a constant metalorganic vapor feed rate, the elemental composition of the nanocrystals was found to be independent of the sulfur flow rate into the plasma, above a small threshold value. At constant sulfur flow rate, the nanocrystal composition depended on the metalorganic vapor feed rate. Specifically, the ensemble metal atomic fraction in the nanocrystals was found to increase with increasing metalorganic vapor flow rates, resulting in more metal-rich crystal phases. The metalorganic feed rate can be used to control the composition and crystal phase of the metal-sulfide nanocrystals synthesized using this plasma process.

  14. One-step DNA-programmed growth of luminescent and biofunctionalized nanocrystals

    NASA Astrophysics Data System (ADS)

    Ma, Nan; Sargent, Edward H.; Kelley, Shana O.

    2009-02-01

    Colloidal semiconductor nanocrystals are widely used as lumiphores in biological imaging because their luminescence is both strong and stable, and because they can be biofunctionalized. During synthesis, nanocrystals are typically passivated with hydrophobic organic ligands, so it is then necessary either to replace these ligands or encapsulate the nanocrystals with hydrophilic moieties to make the lumiphores soluble in water. Finally, biological labels must be added to allow the detection of nucleic acids, proteins and specific cell types. This multistep process is time- and labour-intensive and thus out of reach of many researchers who want to use luminescent nanocrystals as customized lumiphores. Here, we show that a single designer ligand-a chimeric DNA molecule-can controllably program both the growth and the biofunctionalization of the nanocrystals. One part of the DNA sequence controls the nanocrystal passivation and serves as a ligand, while another part controls the biorecognition. The synthetic protocol reported here is straightforward and produces a homogeneous dispersion of nanocrystal lumiphores functionalized with a single biomolecular receptor. The nanocrystals exhibit strong optical emission in the visible region, minimal toxicity and have hydrodynamic diameters of ~6 nm, which makes them suitable for bioimaging. We show that the nanocrystals can specifically bind DNA, proteins or cells that have unique surface recognition markers.

  15. Optical properties of charged semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Jha, Praket P.

    The effect of n-type doping on the luminescence properties of II-VI quantum dots is studied. The addition of two shells of CdS on CdSe quantum dots prevents the creation of surface traps and makes the system stable under reducing environment. The injection of electrons into films of quantum dots leads to lower photoluminescence (PL) efficiency, with the extent of quenching dependent on both the number and the quantum states of the spectator charges in the nanocrystal. It is found that a 1Pe electron is an eightfold better PL quencher than the 1Se electron. Reduced threshold for stimulated emission is also observed in doped CdSe/CdS films. Time resolved photoluminescence measurements are used to extract the recombination rates of a charged exciton, called trion. It is observed that the negative trion has a radiative rate ˜2.2 +/- 0.4x faster than a neutral exciton, while its non-radiative recombination rate is slower than the biexciton non-radiative recombination rate by a factor of 7.5 +/- 1.7. The knowledge of the recombination rates of the trion enables us to calculate the quantum yield of a negative trion to be ˜10% for the nanocrystals investigated in our work. This is larger than the off state quantum yield from a single quantum dot photoluminescence trajectory and eliminates the formation of negative trion as the possible reason for the PL blinking of single quantum dots. Single quantum dot electrochemistry has also been achieved. It is shown that by varying the Fermi level of the system electrons can be reversibly injected into and extracted out of single CdSe/CdS and CdSe/ZnS nanoparticles to modulate the photoluminescence.

  16. Pyramidal and Chiral Groupings of Gold Nanocrystals Assembled Using DNA Scaffolds

    SciTech Connect

    Mastroianni, Alexander; Claridge, Shelley; Alivisatos, A. Paul

    2009-03-30

    Nanostructures constructed from metal and semiconductor nanocrystals conjugated to, and organized by DNA are an emerging class of material with collective optical properties. We created discrete pyramids of DNA with gold nanocrystals at the tips. By taking small angle X-ray scattering (SAXS) measurments from solutions of these pyramids we confirmed that this pyramidal geometry creates structures which are more rigid in solution than linear DNA. We then took advantage of the tetrahedral symmetry to demonstrate construction of chiral nanostructures.

  17. Formation of Si nanocrystals utilizing a Au nanoscale island etching mask

    SciTech Connect

    Kang, Y.M.; Lee, S.J.; Kim, D.Y. . E-mail: dykim@dongguk.edu; Kim, T.W.; Woo, Y.-D.; Wang, K.L.

    2005-01-04

    Si nanocrystals were formed by using a Au nanoscale island etching mask. A high-resolution transmission electron microscopy image showed that the Si nanocrystals were created on a SiO{sub x} layer, and the luminescence peak related to Si nanocrystals was observed in the cathodoluminescence spectrum. Capacitance-voltage measurements demonstrate a metal-insulator-semiconductor behavior with a flatband voltage shift for the Al/SiO{sub 2}/nanocrystalline Si/SiO{sub 2}/p-Si structures, indicative of the existence of the Si nanocrystals embedded into the SiO{sub x} layer. These results indicate that Si nanocrystals embedded into the SiO{sub x} layer can be formed by using a Au island etching mask.

  18. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  19. Nanocrystal-Powered Nanomotor

    SciTech Connect

    Regan, B.C.; Aloni, S.; Jensen, K.; Ritchie, R.O.; Zettl, A.

    2005-07-05

    We have constructed and operated a nanoscale linear motorpowered by a single metal nanocrystal ram sandwiched between mechanicallever arms. Low-level electrical voltages applied to the carbon nanotubelever arms cause the nanocrystal to grow or shrink in a controlledmanner. The length of the ram is adjustable from 0 to more than 150 nm,with extension speeds exceeding 1900 nm/s. The thermodynamic principlesgoverning motor operation resemble those driving frost heave, a naturalsolid-state linear motor.

  20. Resonant energy transfer of triplet excitons from pentacene to PbSe nanocrystals

    NASA Astrophysics Data System (ADS)

    Tabachnyk, Maxim; Ehrler, Bruno; Gélinas, Simon; Böhm, Marcus L.; Walker, Brian J.; Musselman, Kevin P.; Greenham, Neil C.; Friend, Richard H.; Rao, Akshay

    2014-11-01

    The efficient transfer of energy between organic and inorganic semiconductors is a widely sought after property, but has so far been limited to the transfer of spin-singlet excitons. Here we report efficient resonant-energy transfer of molecular spin-triplet excitons from organic semiconductors to inorganic semiconductors. We use ultrafast optical absorption spectroscopy to track the dynamics of triplets, generated in pentacene through singlet exciton fission, at the interface with lead selenide (PbSe) nanocrystals. We show that triplets transfer to PbSe rapidly (<1 ps) and efficiently, with 1.9 triplets transferred for every photon absorbed in pentacene, but only when the bandgap of the nanocrystals is close to resonance (±0.2 eV) with the triplet energy. Following triplet transfer, the excitation can undergo either charge separation, allowing photovoltaic operation, or radiative recombination in the nanocrystal, enabling luminescent harvesting of triplet exciton energy in light-emitting structures.

  1. Resonant energy transfer of triplet excitons from pentacene to PbSe nanocrystals.

    PubMed

    Tabachnyk, Maxim; Ehrler, Bruno; Gélinas, Simon; Böhm, Marcus L; Walker, Brian J; Musselman, Kevin P; Greenham, Neil C; Friend, Richard H; Rao, Akshay

    2014-11-01

    The efficient transfer of energy between organic and inorganic semiconductors is a widely sought after property, but has so far been limited to the transfer of spin-singlet excitons. Here we report efficient resonant-energy transfer of molecular spin-triplet excitons from organic semiconductors to inorganic semiconductors. We use ultrafast optical absorption spectroscopy to track the dynamics of triplets, generated in pentacene through singlet exciton fission, at the interface with lead selenide (PbSe) nanocrystals. We show that triplets transfer to PbSe rapidly (<1 ps) and efficiently, with 1.9 triplets transferred for every photon absorbed in pentacene, but only when the bandgap of the nanocrystals is close to resonance (±0.2 eV) with the triplet energy. Following triplet transfer, the excitation can undergo either charge separation, allowing photovoltaic operation, or radiative recombination in the nanocrystal, enabling luminescent harvesting of triplet exciton energy in light-emitting structures. PMID:25282509

  2. 2009 Clusters, Nanocrystals & Nanostructures GRC

    SciTech Connect

    Lai-Sheng Wang

    2009-07-19

    For over thirty years, this Gordon Conference has been the premiere meeting for the field of cluster science, which studies the phenomena that arise when matter becomes small. During its history, participants have witnessed the discovery and development of many novel materials, including C60, carbon nanotubes, semiconductor and metal nanocrystals, and nanowires. In addition to addressing fundamental scientific questions related to these materials, the meeting has always included a discussion of their potential applications. Consequently, this conference has played a critical role in the birth and growth of nanoscience and engineering. The goal of the 2009 Gordon Conference is to continue the forward-looking tradition of this meeting and discuss the most recent advances in the field of clusters, nanocrystals, and nanostructures. As in past meetings, this will include new topics that broaden the field. In particular, a special emphasis will be placed on nanomaterials related to the efficient use, generation, or conversion of energy. For example, we anticipate presentations related to batteries, catalysts, photovoltaics, and thermoelectrics. In addition, we expect to address the controversy surrounding carrier multiplication with a session in which recent results addressing this phenomenon will be discussed and debated. The atmosphere of the conference, which emphasizes the presentation of unpublished results and lengthy discussion periods, ensures that attendees will enjoy a valuable and stimulating experience. Because only a limited number of participants are allowed to attend this conference, and oversubscription is anticipated, we encourage all interested researchers from academia, industry, and government institutions to apply as early as possible. An invitation is not required. We also encourage all attendees to submit their latest results for presentation at the poster sessions. We anticipate that several posters will be selected for 'hot topic' oral

  3. Defect Chemistry and Plasmon Physics of Colloidal Metal Oxide Nanocrystals

    SciTech Connect

    Lounis, SD; Runnerstrorm, EL; Llordes, A; Milliron, DJ

    2014-05-01

    Plasmonic nanocrystals of highly doped metal oxides have seen rapid development in the past decade and represent a class of materials with unique optoelectronic properties. In this Perspective, we discuss doping mechanisms in metal oxides and the accompanying physics of free carrier scattering, both of which have implications in determining the properties of localized surface plasmon resonances (LSPRs) in these nanocrystals. The balance between activation and compensation of dopants limits the free carrier concentration of the most common metal oxides, placing a ceiling on the LSPR frequency. Furthermore, because of ionized impurity scattering of the oscillating plasma by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. Though these effects are well-understood in bulk metal oxides, further study is needed to understand their manifestation in nanocrystals and corresponding impact on plasmonic properties, and to develop materials that surpass current limitations in free carrier concentration.

  4. Vibrational Properties of Ge Nanocrystals Determined by EXAFS

    SciTech Connect

    Araujo, L. L.; Kluth, P.; Ridgway, M. C.; Azevedo, G. de M.

    2007-02-02

    The vibrational properties of Ge nanocrystals (NCs) produced by ion implantation in SiO2 followed by thermal annealing were determined from temperature dependent Extended X-Ray Absorption Fine Structure (EXAFS) spectroscopy measurements. Using a correlated anharmonic Einstein model and thermodynamic perturbation theory it was possible to extract information about thermal and static disorder, thermal expansion and anharmonicity effects for the Ge NCs. Comparison with results for bulk crystalline and amorphous Ge indicates that the Ge NCs bonds are stiffer than those of both bulk phases of Ge. Also, the values of the anharmonic linear thermal expansion and the thermal expansion coefficient obtained for the Ge NCs were considerably smaller those for bulk crystalline Ge. Similar trends are reported in the literature for other semiconductor NC systems. They suggest that the increased surface to volume ratio of nanocrystals and the presence of the surrounding SiO2 matrix might be responsible for the different vibrational properties of the nanocrystal phase.

  5. First principles simulations of liquid semiconductors: Electronic, structural and dynamic properties

    NASA Astrophysics Data System (ADS)

    Godlevsky, Vitaliy

    We develop ab initio molecular dynamics simulation technique to examine liquid semiconductors. Our methods use quantum interatomic forces, computed within the pseudopotential-density functional method (PDFM). In our work, we study typical representatives of IV, III-V and II-VI materials: Si, Ge, GaAs and CdTe. We show that, upon melting, IV and III-V semiconductors experience semiconductor → metal transition, while more ionic II-VI compounds remain semiconductors in the melt. Metallic type conductivity of liquid IV and III-V materials results from the structural changes of the systems in the melt. In our simulations, "open" zinc-blende (diamond for Si and Ge) structures transform into a more close-packed configuration during solid → liquid transition. Their coordination number, equal to 4 in the crystalline phase, changes to ˜6 in the liquid. We demonstrate that this leads to the breaking of covalent bonds and delocalization of electrons. According to our results, the density of states function of liquid IV and III-V semiconductors has a well defined "free electron" character. For these materials, the electrical conductivity jumps by one to two orders of magnitude during melting. This is opposite to the behavior of the majority of II-VI compounds. In our work, we examine CdTe, typical II-VI semiconductor. Although the dc conductivity of CdTe increases by a factor of 40 as it melts, this material remains a semiconductor in the liquid: its electrical conductivity increases with the temperature. At variance with IV and III-V semiconductors, liquid CdTe retains its tetrahedral environment with the coordination number of ˜4. We discover that a significant number of anion-cation bonds are conserved in liquid CdTe as opposed to IV and III-V materials. This is in agreement with the small entropy change observed in the melting process of CdTe. In our simulations, we find that further heating of molten CdTe results in significant structural changes with a

  6. A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals

    SciTech Connect

    Sharp, I.D.; Xu, Q.; Yi, D.O.; Liao, C.Y.; Ager III, J.W.; Beeman, J.W.; Yu, K.M.; Robinson, J.T.; Dubon, O.D.; Chrzan, D.C.; Haller, E.E.

    2005-12-12

    Ion implantation into silica followed by thermal annealingis an established growth method for Si and Ge nanocrystals. Wedemonstrate that growth of Group IV semiconductor nanocrystals can besuppressed by co-implantation of oxygen prior to annealing. For Sinanocrystals, at low Si/O dose ratios, oxygen co-implantation leads to areduction of the average nanocrystal size and a blue-shift of thephotoluminescence emission energy. For both Si and Ge nanocrystals, atlarger Si/O or Ge/O dose ratios, the implanted specie is oxidized andnanocrystals do not form. This chemical deactivation was utilized toachieve patterned growth of Si and Ge nanocrystals. Si was implanted intoa thin SiO2 film on a Si substrate followed by oxygen implantationthrough an electron beam lithographically defined stencil mask. Thermalannealing of the co-implanted structure yields two-dimensionallypatterned growth of Si nanocrystals under the masked regions. We applieda previously developed process to obtain exposed nanocrystals byselective HF etching of the silica matrix to these patterned structures.Atomic force microscopy (AFM) of etched structures revealed that exposednanocrystals are not laterally displaced from their original positionsduring the etching process. Therefore, this process provides a means ofachieving patterned structures of exposed nanocrystals. The possibilitiesfor scaling this chemical-based lithography process to smaller featuresand for extending it to 3-D patterning is discussed.

  7. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    NASA Astrophysics Data System (ADS)

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.

  8. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    PubMed Central

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic–organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current–voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode–nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  9. Nanocrystal Solar Cells

    SciTech Connect

    Gur, Ilan

    2006-12-15

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  10. Femtosecond chirp-free studies of energy relaxation in semiconductor quantum dots: Search for a phonon bottleneck

    SciTech Connect

    Klimov, V.; McBranch, D.

    1997-08-01

    Contrary to the predictions of phonon bottleneck theories, we observe very fast subpicosecond energy relaxation in strongly confined semiconductor nanocrystals with electron level spacing as large as 20 LO phonon energies.

  11. Radial pressure measurement in core/shell nanocrystals

    NASA Astrophysics Data System (ADS)

    Ithurria, Sandrine; Guyot-Sionnest, Philippe; Mahler, Benoît; Dubertret, Benoît

    2009-02-01

    Quantum dots are nanometre-sized semiconductor particles exhibiting unique size-dependent electronic properties. In order to passivate the nanocrystals surface and to protect them from oxidation, we grow a shell composed of a second semiconductor with a larger bandgap on the core (for example a core / shell CdS / ZnS). However, the lattice mismatch between the two materials (typically 7% between ZnS and CdS) induces mechanical stress which can lead to dislocations. To better understand these mechanisms, it is important to be able to measure the pressure induced on the semiconductor core. We used a nanocrystal doped with manganese ions Mn2+, which provide a phosphorescence signal depending on the local pressure. A few dopant atoms per nanoparticle were placed at controlled radial positions in a ZnS shell formed layer by layer. The experimental pressure measurements are in very good agreement with a simple spherically symmetric elastic continuum model[1]. Using manganese as a pressure gauge could be used to better understand some structural phenomena observed in these nanocrystals, such as crystalline phases transition, or shell cracking.

  12. Laser cooling of a semiconductor by 40 kelvin.

    PubMed

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua

    2013-01-24

    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  13. Wide-Gap Magnetic Semiconductors and Their Nanostructures

    NASA Astrophysics Data System (ADS)

    Furdyna, Jacek K.

    2000-03-01

    Although the field of wide-gap magnetic semiconductors (particularly those involving II-VI semiconductor alloys with Mn) has been active for two decades, a number of new advances have recently emerged, that illustrate the effect of spin-based effects on the electrtonic properties of wide-gap systems generally. We will discuss four of these advances. First, it has recently been shown in ZnSe/CdSe quantum dot (QD) systems containing Mn (either in the quantum dot interior, or in the surrounding matrix) that the photoluminescence intensity emitted by the dots can be amplified (by orders of magnitude) by applying an external magnetic field. This effect can be understood by the very efficient coupling of the QD excitonic emission with the well-known spin-flip transitions taking place within the Mn ions. As an interesting byproduct, it has been demonstrated that Mn act in this system as a nucleating agent for the QDs, resulting in dots that are more uniform and more homogeneous. Second, neutron diffraction experiments on wide-gap ZnTe/MnTe superlattices have shown that the magnetic coupling between the magnetic layers can be contolled by the introduction of deep levels via doping, again pointing to the connection of spin and electronic subsystems. Understanding inter-layer coupling betweem spin-polarized layers is of key importance for "spintronic" applications, and superlattices such as those just mentioned thus constitute a convenient laboratory for investigating these interactions. Third -- again in the context of "spintronics" -- we shall present the various schemes which are used to achieve ferromagnetic order in wide-gap II-VI magnetic semiconductors, and will compare these advances to the concurrent emergence of ferromagnetism in III-V semiconductors alloyed with Mn. And finally, we will discuss magnetic band-edge tuning in magnetic semiconductors as a tool for measuring band offsets, and -- by using ZnSe/ZnBeMnSe heterostructures -- will apply this method to

  14. Designer Nanocrystal Materials for Photovoltaics

    NASA Astrophysics Data System (ADS)

    Kagan, Cherie

    Advances in synthetic methods allow a wide range of semiconductor nanocrystals (NCs) to be tailored in size and shape and to be used as building blocks in the design of NC solids. However, the long, insulating ligands commonly employed in the synthesis of colloidal NCs inhibit strong interparticle coupling and charge transport once NCs are assembled into the solids state as NC arrays. We will describe the range of short, compact ligand chemistries we employ to exchange the long, insulating ligands used in synthesis and to increase interparticle coupling. These ligand exchange processes can have a dramatic influence on NC surface chemistry as well as NC organization in the solids, showing examples of short-range order. Synergistically, we use 1) thermal evaporation and diffusion and 2) wet-chemical methods to introduce extrinsic impurities and non-stoichiometry to passivate surface traps and dope NC solids. NC coupling and doping provide control over the density of states and the carrier type, concentration, mobility, and lifetime, which we characterize by a range of electronic and spectroscopic techniques. We will describe the importance of engineering device interfaces to design NC materials for solar photovoltaics.

  15. Correlations for single-crystal elastic constants of compound semiconductors and their representation in isomechanical groups

    NASA Astrophysics Data System (ADS)

    Derby, B.

    2007-08-01

    A correlation is presented for the single-crystal elastic constants (Cij) of elemental (and IV-IV), III-V, and II-VI semiconductors with the diamond cubic, sphalerite, and wurtzite crystal structures. Both experimental data and theoretical calculations based on density functional theory follow the correlation. The elastic constants can be represented by an empirical linear relation that is a simple function of melting temperature TM and mean atomic volume Ω with Cij=Aij+Bij(kBTM/Ω) , where kB is Boltzmann’s constant. The empirical constants Aij and Bij are different for each of the groupings of semiconductors considered, which are identified as isomechanical groups. This correlation is similar in form to other correlations in the literature for diffusion data of materials that indicate the significance of the melting temperature as a scaling for lattice dynamic properties of materials.

  16. Angular dependent study on spin transport in magnetic semiconductor heterostructures with Dresselhaus spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Mirzanian, S. M.; Shokri, A. A.; Mikaili Agah, K.; Elahi, S. M.

    2015-09-01

    We investigate theoretically the effects of Dresselhaus spin-orbit coupling (DSOC) on the spin-dependent current and shot noise through II-VI diluted magnetic semiconductor/nonmagnetic semiconductor (DMS/NMS) barrier structures. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction and also applied voltage. We also study the dependence of spin-dependent properties on external magnetic field and relative angle between the magnetizations of two DMS layers in CdTe/CdMnTe heterostructures by including the DSOC effect. The results show that the DSOC has great different influence on transport properties of electrons with spin up and spin down in the considered system and this aspect may be utilized in designing new spintronics devices.

  17. Synthesis of nanocrystals and nanocrystal self-assembly

    NASA Astrophysics Data System (ADS)

    Chen, Zhuoying

    nanocrystals is presented. Different surfactants of amines, carboxylic acids, and alcohols were used to study the effect of size and morphological control over the nanocrystals. Techniques including X-ray diffraction, transmission electron microscopy, selected area electron diffraction, and high-resolution electron microscopy are used to examine crystallinity and morphology. Chapter 3. By investigating the self-assembly of cadmium selenide-gold (CdSe-Au) nanoparticle mixtures by transmission electron microscopy after solvent evaporation, the effect of solvents in the formation process of CdSe-Au binary nanoparticle superlattices (BNSLs) was studied. 1-dodecanethiol was found to be critical in generating conditions necessary for superlattice formation, prior to the other factors that likely determine structure, highlighting the dual role of this organic polar molecule as both ligand and high boiling point/crystallization solvent. The influence of thiol was investigated under various concentrations (and also compared with other less polar solvents) in order to determine optimized conditions for self-assembly, for which relatively large (> 1 mum2) areas of superlattices could be routinely formed. Depending on appropriate selection of the radius ratio, AuCu or CaCu 5 binary superlattices of CdSe-Au nanoparticles were generated. Chapter 4. The preparation of binary nanoparticle superlattices obtained by self-assembly of two different semiconductor quantum dots is presented. Such a system is a means to include two discretized, quantum-confined, and complimentary semiconductor units in close proximity, which might exhibit interesting charge transport properties for applications such as solar cells. From a range of possible structures predicted, we observe an exclusive preference for the formation of Cuboctahedral AB13 (Cuboctahedral modification of NaZn13) and AB5 (isostructural with CaCu5) structures in the system of 8.1 nm CdTe and 4.4 nm CdSe nanoparticles. To understand further

  18. Bridging the Gap: Electron Relay and Plasmonic Sensitization of Metal Nanocrystals for Metal Clusters.

    PubMed

    Xiao, Fang-Xing; Zeng, Zhiping; Liu, Bin

    2015-08-26

    In recent years, enormous attention has been paid to the construction of metal cluster-semiconductor nanocomposites because of the fascinating and unique properties of metal clusters; however, investigations on photoelectrochemical (PEC) and photocatalytic properties of metal cluster-semiconductor systems are still rare. Moreover, to date, intrinsic correlation between metal clusters and bulk metal nanocrystals has yet to be elucidated. In this work, a facile layer-by-layer (LbL) self-assembly strategy has been developed to judiciously and intimately integrate gold nanocrystals (Au) within the interface between gold clusters (Au(x)) and hierarchically ordered TiO2 nanotube arrays framework, by which imperative roles of Au nanocrystals as electron relay mediator and plasmonic sensitizer for Aux clusters were revealed. In addition, it was found that synergistic interaction between Au nanocrystals and Aux clusters contributed to promising visible-light-driven photocatalytical and PEC performances. It is anticipated that our work could provide a general way for rationally constructing metal and metal clusters codecorated semiconductor heterostructures and, more significantly, bridge the gap between metal clusters and metal nanocrystals for a diverse range of applications. PMID:26258281

  19. Simple Preparation and Stabilization of Nickel Nanocrystals on Cellulose Nanocrystal

    SciTech Connect

    Shin, Yongsoon; Bae, In-Tae; Arey, Bruce W.; Exarhos, Gregory J.

    2007-06-01

    Nickel nanocrystals were simply prepared on the carbon through a thermal reduction process at 400-500oC under N2 after Ni(II) ions were deposited and stabilized on cellulose nanocrystal (CNXL) surface. Hydroxyl groups on the CNXL anchor and stabilize Ni(II) ions. Well-dispersed Ni nanocrystals on the carbonized CNXL were about 5-12 nm in size. XRD, FESEM, and TEM were employed to characterize the products.

  20. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    NASA Astrophysics Data System (ADS)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  1. Optoelectronic Properties of CuInS2 Nanocrystals and Their Origin.

    PubMed

    Leach, Alice D P; Macdonald, Janet E

    2016-02-01

    The capacity of fluorescent colloidal semiconductor nanocrystals for commercial application has led to the development of nanocrystals with nontoxic constituent elements as replacements for the currently available Cd- and Pb-containing systems. CuInS2 is a good candidate material because of its direct band gap in the near-infrared spectral region and large optical absorption coefficient. The ternary nature, flexible stoichiometry, and different crystal structures of CuInS2 lead to a range of optoelectronic properties, which have been challenging to elucidate. In this Perspective, the optoelectronic properties of CuInS2 nanocrystals are described and what is known of their origin is discussed. We begin with an overview of their synthesis, structure, and mechanism of formation. A complete discussion of the tunable luminescence properties and the radiative decay mechanism of this system is then presented. Finally, progress toward application of these "green" nanocrystals is summarized. PMID:26758860

  2. Direct printing of microstructures by femtosecond laser excitation of nanocrystals in solution

    NASA Astrophysics Data System (ADS)

    Shou, Wan; Pan, Heng

    2016-05-01

    We report direct printing of micro/sub-micron structures by femtosecond laser excitation of semiconductor nanocrystals (NCs) in solution. Laser excitation with moderate intensity (1011-1012 W/cm2) induces 2D and 3D deposition of CdTe nanocrystals in aqueous solution, which can be applied for direct printing of microstructures. It is believed that laser irradiation induces charge formation on nanocrystals leading to deposition. Furthermore, it is demonstrated that the charged nanocrystals can respond to external electrical bias, enabling a printing approach based on selective laser induced electrophoretic deposition. Finally, energy dispersive X-ray analysis of deposited structures shows oxidation occurs and deposited structure mainly consists of CdxO.

  3. Nickel and nickel oxide nanocrystals selectively grafting on multiwalled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Prabhu, Yendrapati Taraka; Rao, Kalagadda Venkateswara; Kumari, Bandla Siva; Sai, Vemula Sesha; Pavani, Tambur

    2015-01-01

    Nickel and nickel oxide nanocrystals in their pure phase are carefully embellished by a facial method on oxygen-functionalized multi-walled carbon nanotubes (O-MWCNTs) using nickel nitrate (NN) was effectively accomplished for the first time by calcining them in hydrogen, nitrogen and air, respectively, at suitable temperatures. Nickel and nickel oxide nanocrystals impregnated O-MWCNTs were examined for its structure and morphology by various techniques, such as powder X-ray diffraction, Fourier transform infrared spectroscopy, transmission electron microscopy and field emission scanning electron microscopy. The nanocrystals on the O-MWCNTs were determined of 15-20 nm size. Decorated nanocrystals on CNT's have potential applications in semiconductor industries.

  4. Atomistic understanding of cation exchange in PbS nanocrystals using simulations with pseudoligands

    NASA Astrophysics Data System (ADS)

    Fan, Zhaochuan; Lin, Li-Chiang; Buijs, Wim; Vlugt, Thijs J. H.; van Huis, Marijn A.

    2016-05-01

    Cation exchange is a powerful tool for the synthesis of nanostructures such as core-shell nanocrystals, however, the underlying mechanism is poorly understood. Interactions of cations with ligands and solvent molecules are systematically ignored in simulations. Here, we introduce the concept of pseudoligands to incorporate cation-ligand-solvent interactions in molecular dynamics. This leads to excellent agreement with experimental data on cation exchange of PbS nanocrystals, whereby Pb ions are partially replaced by Cd ions from solution. The temperature and the ligand-type control the exchange rate and equilibrium composition of cations in the nanocrystal. Our simulations reveal that Pb ions are kicked out by exchanged Cd interstitials and migrate through interstitial sites, aided by local relaxations at core-shell interfaces and point defects. We also predict that high-pressure conditions facilitate strongly enhanced cation exchange reactions at elevated temperatures. Our approach is easily extendable to other semiconductor compounds and to other families of nanocrystals.

  5. Real-time magnetic resonance imaging and quantification of lipoprotein metabolism in vivo using nanocrystals

    NASA Astrophysics Data System (ADS)

    Bruns, Oliver T.; Ittrich, Harald; Peldschus, Kersten; Kaul, Michael G.; Tromsdorf, Ulrich I.; Lauterwasser, Joachim; Nikolic, Marija S.; Mollwitz, Birgit; Merkel, Martin; Bigall, Nadja C.; Sapra, Sameer; Reimer, Rudolph; Hohenberg, Heinz; Weller, Horst; Eychmüller, Alexander; Adam, Gerhard; Beisiegel, Ulrike; Heeren, Joerg

    2009-03-01

    Semiconductor quantum dots and superparamagnetic iron oxide nanocrystals have physical properties that are well suited for biomedical imaging. Previously, we have shown that iron oxide nanocrystals embedded within the lipid core of micelles show optimized characteristics for quantitative imaging. Here, we embed quantum dots and superparamagnetic iron oxide nanocrystals in the core of lipoproteins-micelles that transport lipids and other hydrophobic substances in the blood-and show that it is possible to image and quantify the kinetics of lipoprotein metabolism in vivo using fluorescence and dynamic magnetic resonance imaging. The lipoproteins were taken up by liver cells in wild-type mice and displayed defective clearance in knock-out mice lacking a lipoprotein receptor or its ligand, indicating that the nanocrystals did not influence the specificity of the metabolic process. Using this strategy it is possible to study the clearance of lipoproteins in metabolic disorders and to improve the contrast in clinical imaging.

  6. Symmetry-controlled colloidal nanocrystals: nonhydrolytic chemical synthesis and shape determining parameters.

    PubMed

    Jun, Young-wook; Lee, Jae-Hyun; Choi, Jin-sil; Cheon, Jinwoo

    2005-08-11

    Since inorganic nanocrystals exhibit unique shape-dependent nanoscale properties and can be utilized as basic building blocks for futuristic nanodevices, a systematic study on the shape control of these nanocrystals remains an important subject in materials and physical chemistry. In this feature article, we overview the recent progress on the synthetic development of symmetry-controlled colloidal nanocrystals of semiconductor and metal oxide, which are prepared through nonhydrolytic chemical routes. We describe their shape-guiding processes and illustrate the detailed key factors controlling their growth by examining various case studies of zero-dimensional spheres and cubes, one-dimensional rods, and quasi multidimensional structures such as disks, multipods, and stars. Specifically, the crystalline phase of nucleating seeds, surface energy, kinetic vs thermodynamic growth, and selective adhesion processes of capping ligands are found to be most crucial for the determination of the nanocrystal shape. PMID:16852873

  7. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  8. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  9. Multiple Exciton Generation in Colloidal Silicon Nanocrystals

    SciTech Connect

    Beard, M. C.; Knutsen, K. P.; Yu, P.; Luther, J. M.; Song, Q.; Metzger, W. K.; Ellingson, R. J.; Nozik, A. M.

    2007-01-01

    Multiple exciton generation (MEG) is a process whereby multiple electron-hole pairs, or excitons, are produced upon absorption of a single photon in semiconductor nanocrystals (NCs) and represents a promising route to increased solar conversion efficiencies in single-junction photovoltaic cells. We report for the first time MEG yields in colloidal Si NCs using ultrafast transient absorption spectroscopy. We find the threshold photon energy for MEG in 9.5 nm diameter Si NCs (effective band gap {identical_to} Eg = 1.20 eV) to be 2.4 {+-} 0.1E{sub g} and find an exciton-production quantum yield of 2.6 {+-} 0.2 excitons per absorbed photon at 3.4E{sub g}. While MEG has been previously reported in direct-gap semiconductor NCs of PbSe, PbS, PbTe, CdSe, and InAs, this represents the first report of MEG within indirect-gap semiconductor NCs. Furthermore, MEG is found in relatively large Si NCs (diameter equal to about twice the Bohr radius) such that the confinement energy is not large enough to produce a large blue-shift of the band gap (only 80 meV), but the Coulomb interaction is sufficiently enhanced to produce efficient MEG. Our findings are of particular importance because Si dominates the photovoltaic solar cell industry, presents no problems regarding abundance and accessibility within the Earth's crust, and poses no significant environmental problems regarding toxicity.

  10. Analytical modeling of localized surface plasmon resonance in heterostructure copper sulfide nanocrystals

    SciTech Connect

    Caldwell, Andrew H.; Ha, Don-Hyung; Robinson, Richard D.; Ding, Xiaoyue

    2014-10-28

    Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals is a relatively new field of investigation that promises greater tunability of plasmonic properties compared to metal nanoparticles. A novel process by which the LSPR in semiconductor nanocrystals can be altered is through heterostructure formation arising from solution-based cation exchange. Herein, we describe the development of an analytical model of LSPR in heterostructure copper sulfide-zinc sulfide nanocrystals synthesized via a cation exchange reaction between copper sulfide (Cu{sub 1.81}S) nanocrystals and Zn ions. The cation exchange reaction produces dual-interface, heterostructure nanocrystals in which the geometry of the copper sulfide phase can be tuned from a sphere to a thin disk separating symmetrically-grown sulfide (ZnS) grains. Drude model electronic conduction and Mie-Gans theory are applied to describe how the LSPR wavelength changes during cation exchange, taking into account the morphology evolution and changes to the local permittivity. The results of the modeling indicate that the presence of the ZnS grains has a significant effect on the out-of-plane LSPR mode. By comparing the results of the model to previous studies on solid-solid phase transformations of copper sulfide in these nanocrystals during cation exchange, we show that the carrier concentration is independent of the copper vacancy concentration dictated by its atomic phase. The evolution of the effective carrier concentration calculated from the model suggests that the out-of-plane resonance mode is dominant. The classical model was compared to a simplified quantum mechanical model which suggested that quantum mechanical effects become significant when the characteristic size is less than ∼8 nm. Overall, we find that the analytical models are not accurate for these heterostructured semiconductor nanocrystals, indicating the need for new model development for this emerging field.

  11. Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Kovács, A.; Sadowski, J.; Kasama, T.; Domagała, J.; Mathieu, R.; Dietl, T.; Dunin-Borkowski, R. E.

    2011-04-01

    Voids adjacent to cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in an annealed Ga0.995Mn0.005As magnetic semiconductor specimen grown by molecular beam epitaxy. Nanobeam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter as compared to bulk MnAs. After annealing at 903 K, the magnetic transition temperature of the specimen is likely to be dominated by the presence of cubic ferromagnetic nanocrystals. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals.

  12. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  13. Research Update: Comparison of salt- and molecular-based iodine treatments of PbS nanocrystal solids for solar cells

    SciTech Connect

    Jähnig, Fabian; Bozyigit, Deniz; Yarema, Olesya; Wood, Vanessa

    2015-02-01

    Molecular- and salt-based chemical treatments are believed to passivate electronic trap states in nanocrystal-based semiconductors, which are considered promising for solar cells but suffer from high carrier recombination. Here, we compare the chemical, optical, and electronic properties of PbS nanocrystal-based solids treated with molecular iodine and tetrabutylammonium iodide. Surprisingly, both treatments increase—rather than decrease—the number density of trap states; however, the increase does not directly influence solar cell performance. We explain the origins of the observed impact on solar cell performance and the potential in using different chemical treatments to tune charge carrier dynamics in nanocrystal-solids.

  14. Quantum Confinement Regimes in CdTe Nanocrystals Probed by Single Dot Spectroscopy: From Strong Confinement to the Bulk Limit.

    PubMed

    Tilchin, Jenya; Rabouw, Freddy T; Isarov, Maya; Vaxenburg, Roman; Van Dijk-Moes, Relinde J A; Lifshitz, Efrat; Vanmaekelbergh, Daniel

    2015-08-25

    Sufficiently large semiconductor nanocrystals are a useful model system to characterize bulk-like excitons, with the electron and hole bound predominantly by Coulomb interaction. We present optical characterization of excitons in individual giant CdTe nanocrystals with diameters up to 25.5 nm at 4.2 K under varying excitation power and magnetic field strength. We determine values for the biexciton binding energy, diamagnetic shift constant, and Landé g-factor, which approach the bulk values with increasing nanocrystal size. PMID:26181051

  15. Cu-doped CdS and ZnS nanocrystals grown onto thiolated silica-gel

    NASA Astrophysics Data System (ADS)

    Andrade, George Ricardo Santana; Nascimento, Cristiane da Cunha; Xavier, Paulo Adriano; Costa, Silvanio Silverio Lopes; Costa, Luiz Pereira; Gimenez, Iara F.

    2014-11-01

    CdS and ZnS nanocrystals were grown over specific binding sites onto a thiolated silica-gel aiming to favor defect emission processes. This strategy was found to be effective in yielding ZnS nanocrystals with simultaneous blue and blue-green emissions owing to different types of defects. The effects of doping with copper ions have been observed on the photoluminescence properties. The intensity of defect-related emissions from both semiconductor nanocrystals increased with increasing dopant concentration from 0.25% to 1.5% copper, consistent with the presence of sulfur vacancies. Higher dopant concentrations lead to concentration quenching.

  16. New self-assembled nanocrystal micelles for biolabels and biosensors.

    SciTech Connect

    Tallant, David Robert; Wilson, Michael C. (University of New Mexico, Albuquerque, NM); Leve, Erik W. (University of New Mexico, Albuquerque, NM); Fan, Hongyou; Brinker, C. Jeffrey; Gabaldon, John (University of New Mexico, Albuquerque, NM); Scullin, Chessa (University of New Mexico, Albuquerque, NM)

    2005-12-01

    The ability of semiconductor nanocrystals (NCs) to display multiple (size-specific) colors simultaneously during a single, long term excitation holds great promise for their use in fluorescent bio-imaging. The main challenges of using nanocrystals as biolabels are achieving biocompatibility, low non-specific adsorption, and no aggregation. In addition, functional groups that can be used to further couple and conjugate with biospecies (proteins, DNAs, antibodies, etc.) are required. In this project, we invented a new route to the synthesis of water-soluble and biocompatible NCs. Our approach is to encapsulate as-synthesized, monosized, hydrophobic NCs within the hydrophobic cores of micelles composed of a mixture of surfactants and phospholipids containing head groups functionalized with polyethylene glycol (-PEG), -COOH, and NH{sub 2} groups. PEG provided biocompatibility and the other groups were used for further biofunctionalization. The resulting water-soluble metal and semiconductor NC-micelles preserve the optical properties of the original hydrophobic NCs. Semiconductor NCs emit the same color; they exhibit equal photoluminescence (PL) intensity under long-time laser irradiation (one week) ; and they exhibit the same PL lifetime (30-ns). The results from transmission electron microscopy and confocal fluorescent imaging indicate that water-soluble semiconductor NC-micelles are biocompatible and exhibit no aggregation in cells. We have extended the surfactant/lipid encapsulation techniques to synthesize water-soluble magnetic NC-micelles. Transmission electron microscopy results suggest that water-soluble magnetic NC-micelles exhibit no aggregation. The resulting NC-micelles preserve the magnetic properties of the original hydrophobic magnetic NCs. Viability studies conducted using yeast cells suggest that the magnetic nanocrystal-micelles are biocompatible. We have demonstrated, for the first time, that using external oscillating magnetic fields to manipulate

  17. Silicon nanocrystal-noble metal hybrid nanoparticles.

    PubMed

    Sugimoto, H; Fujii, M; Imakita, K

    2016-06-01

    We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion. PMID:27121127

  18. Suppression of auger recombination in ""giant"" core/shell nanocrystals

    SciTech Connect

    Garcia Santamaria, Florencio; Vela, Javier; Schaller, Richard D; Hollingsworth, Jennifer A; Klimov, Victor I; Chen, Yongfen

    2009-01-01

    Many potential applications of semiconductor nanocrystals are hindered by nonradiative Auger recombination wherein the electron-hole (exciton) recombination energy is transferred to a third charge carrier. This process severely limits the lifetime and bandwidth of optical gain, leads to large nonradiative losses in light emitting diodes and photovoltaic cells, and is believed to be responsible for intermittency ('blinking') of emission from single nanocrystals. The development of nanostructures in which Auger recombination is suppressed has been a longstanding goal in colloidal nanocrystal research. Here, we demonstrate that such suppression is possible using so-called 'giant' nanocrystals that consist of a small CdSe core and a thick CdS shell. These nanostructures exhibit a very long biexciton lifetime ({approx}10 ns) that is likely dominated by radiative decay instead of non-radiative Auger recombination. As a result of suppressed Auger recombination, even high-order multiexcitons exhibit high emission efficiencies, which allows us to demonstrate optical amplification with an extraordinarily large bandwidth (>500 me V) and record low excitation thresholds.

  19. Nanocrystal waveguide (NOW) laser

    DOEpatents

    Simpson, John T.; Simpson, Marcus L.; Withrow, Stephen P.; White, Clark W.; Jaiswal, Supriya L.

    2005-02-08

    A solid state laser includes an optical waveguide and a laser cavity including at least one subwavelength mirror disposed in or on the optical waveguide. A plurality of photoluminescent nanocrystals are disposed in the laser cavity. The reflective subwavelength mirror can be a pair of subwavelength resonant gratings (SWG), a pair of photonic crystal structures (PC), or a distributed feedback structure. In the case of a pair of mirrors, a PC which is substantially transmissive at an operating wavelength of the laser can be disposed in the laser cavity between the subwavelength mirrors to improve the mode structure, coherence and overall efficiency of the laser. A method for forming a solid state laser includes the steps of providing an optical waveguide, creating a laser cavity in the optical waveguide by disposing at least one subwavelength mirror on or in the waveguide, and positioning a plurality of photoluminescent nanocrystals in the laser cavity.

  20. Models of Mass Transport During Microgravity Crystal Growth of Alloyed Semiconductors in a Magnetic Field

    NASA Technical Reports Server (NTRS)

    Ma, Nancy

    2003-01-01

    Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals, are extremely important for optoelectronic devices. Currently, high-quality crystals of GeSi and of II-VI alloys can be grown by epitaxial processes, but the time required to grow a certain amount of single crystal is roughly 1,000 times longer than the time required for Bridgman growth from a melt. Recent rapid advances in optoelectronics have led to a great demand for more and larger crystals with fewer dislocations and other microdefects and with more uniform and controllable compositions. Currently, alloyed crystals grown by bulk methods have unacceptable levels of segregation in the composition of the crystal. Alloyed crystals are being grown by the Bridgman process in space in order to develop successful bulk-growth methods, with the hope that the technology will be equally successful on earth. Unfortunately some crystals grown in space still have unacceptable segregation, for example, due to residual accelerations. The application of a weak magnetic field during crystal growth in space may eliminate the undesirable segregation. Understanding and improving the bulk growth of alloyed semiconductors in microgravity is critically important. The purpose of this grant to to develop models of the unsteady species transport during the bulk growth of alloyed semiconductor crystals in the presence of a magnetic field in microgravity. The research supports experiments being conducted in the High Magnetic Field Solidification Facility at Marshall Space Flight Center (MSFC) and future experiments on the International Space Station.

  1. Synergetic effects of II-VI sensitization upon TiO{sub 2} for photoelectrochemical water splitting; a tri-layered structured scheme

    SciTech Connect

    Mumtaz, Asad; Mohamed, Norani Muti

    2014-10-24

    World's energy demands are growing on a higher scale increasing the need of more reliable and long term renewable energy resources. Efficient photo-electrochemical (PEC) devices based on novel nano-structured designs for solar-hydrogen generation need to be developed. This study provides an insight of the tri-layered-TiO2 based nanostructures. Observing the mechanism of hydrogen production, the comparison of the structural order during the synthesis is pronounced. The sequence in the tri-layered structure affects the photogenerated electron (e{sup −}) and hole (h{sup +}) pair transfer and separation. It is also discussed that not only the semiconductors band gaps alignment is important with respect to the water redox potential but also the interfacial regions. Quasi-Fermi-level adjustment at the interfacial regions plays a key role in deciding the solar to hydrogen efficiency. More efficient multicomponent semiconductor nano-design (MCSN) could be developed with the approach given in this study.

  2. PREFACE: Theory, Modelling and Computational methods for Semiconductors

    NASA Astrophysics Data System (ADS)

    Migliorato, Max; Probert, Matt

    2010-04-01

    These conference proceedings contain the written papers of the contributions presented at the 2nd International Conference on: Theory, Modelling and Computational methods for Semiconductors. The conference was held at the St Williams College, York, UK on 13th-15th Jan 2010. The previous conference in this series took place in 2008 at the University of Manchester, UK. The scope of this conference embraces modelling, theory and the use of sophisticated computational tools in Semiconductor science and technology, where there is a substantial potential for time saving in R&D. The development of high speed computer architectures is finally allowing the routine use of accurate methods for calculating the structural, thermodynamic, vibrational and electronic properties of semiconductors and their heterostructures. This workshop ran for three days, with the objective of bringing together UK and international leading experts in the field of theory of group IV, III-V and II-VI semiconductors together with postdocs and students in the early stages of their careers. The first day focused on providing an introduction and overview of this vast field, aimed particularly at students at this influential point in their careers. We would like to thank all participants for their contribution to the conference programme and these proceedings. We would also like to acknowledge the financial support from the Institute of Physics (Computational Physics group and Semiconductor Physics group), the UK Car-Parrinello Consortium, Accelrys (distributors of Materials Studio) and Quantumwise (distributors of Atomistix). The Editors Acknowledgements Conference Organising Committee: Dr Matt Probert (University of York) and Dr Max Migliorato (University of Manchester) Programme Committee: Dr Marco Califano (University of Leeds), Dr Jacob Gavartin (Accelrys Ltd, Cambridge), Dr Stanko Tomic (STFC Daresbury Laboratory), Dr Gabi Slavcheva (Imperial College London) Proceedings edited and compiled by Dr

  3. Method of synthesizing pyrite nanocrystals

    DOEpatents

    Wadia, Cyrus; Wu, Yue

    2013-04-23

    A method of synthesizing pyrite nanocrystals is disclosed which in one embodiment includes forming a solution of iron (III) diethyl dithiophosphate and tetra-alkyl-ammonium halide in water. The solution is heated under pressure. Pyrite nanocrystal particles are then recovered from the solution.

  4. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Petruska, Melissa A.; Klimov, Victor L.

    2012-06-12

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites

  5. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Petruska, Melissa A.; Klimov, Victor L.

    2007-06-05

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites.

  6. Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

  7. Tuning Equilibrium Compositions in Colloidal Cd1-xMnxSe Nanocrystals Using Diffusion Doping and Cation Exchange.

    PubMed

    Barrows, Charles J; Chakraborty, Pradip; Kornowske, Lindsey M; Gamelin, Daniel R

    2016-01-26

    The physical properties of semiconductor nanocrystals can be tuned dramatically via composition control. Here, we report a detailed investigation of the synthesis of high-quality colloidal Cd1-xMnxSe nanocrystals by diffusion doping of preformed CdSe nanocrystals. Until recently, Cd1-xMnxSe nanocrystals proved elusive because of kinetic incompatibilities between Mn(2+) and Cd(2+) chemistries. Diffusion doping allows Cd1-xMnxSe nanocrystals to be prepared under thermodynamic rather than kinetic control, allowing access to broader composition ranges. We now investigate this chemistry as a model system for understanding the characteristics of nanocrystal diffusion doping more deeply. From the present work, a Se(2-)-limited reaction regime is identified, in which Mn(2+) diffusion into CdSe nanocrystals is gated by added Se(2-), and equilibrium compositions are proportional to the amount of added Se(2-). At large added Se(2-) concentrations, a solubility-limited regime is also identified, in which x = xmax = ∼0.31, independent of the amount of added Se(2-). We further demonstrate that Mn(2+) in-diffusion can be reversed by cation exchange with Cd(2+) under exactly the same reaction conditions, purifying Cd1-xMnxSe nanocrystals back to CdSe nanocrystals with fine tunability. These chemistries offer exceptional composition control in Cd1-xMnxSe NCs, providing opportunities for fundamental studies of impurity diffusion in nanocrystals and for development of compositionally tuned nanocrystals with diverse applications ranging from solar energy conversion to spin-based photonics. PMID:26643033

  8. Spin coherence generation and detection in spherical nanocrystals

    NASA Astrophysics Data System (ADS)

    Smirnov, D. S.; Glazov, M. M.

    2012-08-01

    A theoretical description of electron spin orientation and detection by short optical pulses is proposed for ensembles of singly charged semiconductor nanocrystals. The complex structure of the valence band in spherical nanocrystals is taken into account. We demonstrate that the direction of electron spin injected by the pump pulse depends on both the pump pulse helicity and the pump pulse power. It is shown that a train of optical pulses can lead to the complete orientation of the resident electron spin. The microscopic theory of the spin Faraday, Kerr and ellipticity effects is developed and the spectral sensitivity of these signals is discussed. We show that under periodic pumping pronounced mode-locking of electron spins takes place and manifests itself as significant spin signals at negative delays between pump and probe pulses.

  9. Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties.

    PubMed

    Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

    2016-06-01

    Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities. PMID:27216552

  10. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Klimov, Victor L.; Petruska, Melissa A.

    2010-05-25

    The present invention is directed to a process for preparing a solid composite having colloidal nanocrystals dispersed within a sol-gel matrix, the process including admixing colloidal nanocrystals with an amphiphilic polymer including hydrophilic groups selected from the group consisting of --COOH, --OH, --SO.sub.3H, --NH.sub.2, and --PO.sub.3H.sub.2 within a solvent to form an alcohol-soluble colloidal nanocrystal-polymer complex, admixing the alcohol-soluble colloidal nanocrystal-polymer complex and a sol-gel precursor material, and, forming the solid composite from the admixture. The present invention is also directed to the resultant solid composites and to the alcohol-soluble colloidal nanocrystal-polymer complexes.

  11. Mechanical Properties of Nanocrystal Supercrystals

    SciTech Connect

    Tam, Enrico; Podsiadlo, Paul; Shevchenko, Elena; Ogletree, D. Frank; Delplancke-Ogletree, Marie-Paule; Ashby, Paul D.

    2009-12-30

    Colloidal nanocrystals attract significant interest due to their potential applications in electronic, magnetic, and optical devices. Nanocrystal supercrystals (NCSCs) are particularly appealing for their well ordered structure and homogeneity. The interactions between organic ligands that passivate the inorganic nanocrystal cores critically influence their self-organization into supercrystals, By investigating the mechanical properties of supercrystals, we can directly characterize the particle-particle interactions in a well-defined geometry, and gain insight into both the self-assembly process and the potential applications of nanocrystal supercrystals. Here we report nanoindentation studies of well ordered lead-sulfide (Pbs) nanocrystal supercrystals. Their modulus and hardness were found to be similar to soft polymers at 1.7 GPa and 70 MPa respectively and the fractures toughness was 39 KPa/m1/2, revealing the extremely brittle nature of these materials.

  12. Germanium Nanocrystals Embedded in Sapphire

    SciTech Connect

    Xu, Q.; Sharp, I.D.; Liao, C.Y.; Yi, D.O.; Ager III, J.W.; Beeman, J.W.; Yu, K.M.; Chrzan, D.C.; Haller, E.E.

    2005-04-15

    {sup 74}Ge nanocrystals are formed in a sapphire matrix by ion implantation followed by damage. Embedded nanocrystals experience large compressive stress relative to bulk, as embedded in sapphire melt very close to the bulk melting point (Tm = 936 C) whereas experience considerably lower stresses. Also, in situ TEM reveals that nanocrystals ion-beam-synthesized nanocrystals embedded in silica are observed to be spherical and measured by Raman spectroscopy of the zone center optical phonon. In contrast, reveals that the nanocrystals are faceted and have a bi-modal size distribution. Notably, the matrix remains crystalline despite the large implantation dose and corresponding thermal annealing. Transmission electron microscopy (TEM) of as-grown samples those embedded in silica exhibit a significant melting point hysteresis around T{sub m}.

  13. Lattice thermal expansion for normal tetrahedral compound semiconductors

    SciTech Connect

    Omar, M.S. . E-mail: dr_m_s_omar@yahoo.com

    2007-02-15

    The cubic root of the deviation of the lattice thermal expansion from that of the expected value of diamond for group IV semiconductors, binary compounds of III-V and II-VI, as well as several ternary compounds from groups I-III-VI{sub 2}, II-IV-V{sub 2} and I-IV{sub 2}V{sub 3} semiconductors versus their bonding length are given straight lines. Their slopes were found to be 0.0256, 0.0210, 0.0170, 0.0259, 0.0196, and 0.02840 for the groups above, respectively. Depending on the valence electrons of the elements forming these groups, a formula was found to correlate all the values of the slopes mentioned above to that of group IV. This new formula which depends on the melting point and the bonding length as well as the number of valence electrons for the elements forming the compounds, will gives best calculated values for lattice thermal expansion for all compounds forming the groups mentioned above. An empirical relation is also found between the mean ionicity of the compounds forming the groups and their slopes mentioned above and that gave the mean ionicity for the compound CuGe{sub 2}P{sub 3} in the range of 0.442.

  14. A general and robust strategy for the synthesis of nearly monodisperse colloidal nanocrystals

    NASA Astrophysics Data System (ADS)

    Pang, Xinchang; Zhao, Lei; Han, Wei; Xin, Xukai; Lin, Zhiqun

    2013-06-01

    Colloidal nanocrystals exhibit a wide range of size- and shape-dependent properties and have found application in myriad fields, incuding optics, electronics, mechanics, drug delivery and catalysis, to name but a few. Synthetic protocols that enable the simple and convenient production of colloidal nanocrystals with controlled size, shape and composition are therefore of key general importance. Current strategies include organic solution-phase synthesis, thermolysis of organometallic precursors, sol-gel processes, hydrothermal reactions and biomimetic and dendrimer templating. Often, however, these procedures require stringent experimental conditions, are difficult to generalize, or necessitate tedious multistep reactions and purification. Recently, linear amphiphilic block co-polymer micelles have been used as templates to synthesize functional nanocrystals, but the thermodynamic instability of these micelles limits the scope of this approach. Here, we report a general strategy for crafting a large variety of functional nanocrystals with precisely controlled dimensions, compositions and architectures by using star-like block co-polymers as nanoreactors. This new class of co-polymers forms unimolecular micelles that are structurally stable, therefore overcoming the intrinsic instability of linear block co-polymer micelles. Our approach enables the facile synthesis of organic solvent- and water-soluble nearly monodisperse nanocrystals with desired composition and architecture, including core-shell and hollow nanostructures. We demonstrate the generality of our approach by describing, as examples, the synthesis of various sizes and architectures of metallic, ferroelectric, magnetic, semiconductor and luminescent colloidal nanocrystals.

  15. Tuning the Magnetic Properties of Metal Oxide Nanocrystal Heterostructures by Cation Exchange

    PubMed Central

    2013-01-01

    For three types of colloidal magnetic nanocrystals, we demonstrate that postsynthetic cation exchange enables tuning of the nanocrystal’s magnetic properties and achieving characteristics not obtainable by conventional synthetic routes. While the cation exchange procedure, performed in solution phase approach, was restricted so far to chalcogenide based semiconductor nanocrystals, here ferrite-based nanocrystals were subjected to a Fe2+ to Co2+ cation exchange procedure. This allows tracing of the compositional modifications by systematic and detailed magnetic characterization. In homogeneous magnetite nanocrystals and in gold/magnetite core shell nanocrystals the cation exchange increases the coercivity field, the remanence magnetization, as well as the superparamagnetic blocking temperature. For core/shell nanoheterostructures a selective doping of either the shell or predominantly of the core with Co2+ is demonstrated. By applying the cation exchange to FeO/CoFe2O4 core/shell nanocrystals the Neél temperature of the core material is increased and exchange-bias effects are enhanced so that vertical shifts of the hysteresis loops are obtained which are superior to those in any other system. PMID:23362940

  16. Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics.

    PubMed

    Wang, Jun; Xin, Xukai; Lin, Zhiqun

    2011-08-01

    Semiconductor quantum dots exhibit great potential for applications in next generation high efficiency, low cost solar cells because of their unique optoelectronic properties. Cu(2)ZnSnS(4) (CZTS) nanocrystals and graphene quantum dots (GQDs) have recently received much attention as building blocks for use in solar energy conversion due to their outstanding properties and advantageous characteristics, including high optical absorptivity, tunable bandgap, and earth abundant chemical composition. In this Feature Article, recent advances in the synthesis and utilization of CZTS nanocrystals and colloidal GQDs for photovoltaics are highlighted, followed by an outlook on the future research efforts in these areas. PMID:21713274

  17. Spin dynamics of an individual Cr atom in a semiconductor quantum dot under optical excitation

    NASA Astrophysics Data System (ADS)

    Lafuente-Sampietro, A.; Utsumi, H.; Boukari, H.; Kuroda, S.; Besombes, L.

    2016-08-01

    We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Cr interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.

  18. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  19. Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

    NASA Technical Reports Server (NTRS)

    Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

    1997-01-01

    Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

  20. Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics

    SciTech Connect

    Urbanczyk, Adam; Otten, Frank W. M. van; Noetzel, Richard

    2011-06-13

    We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelength of the QDs. Photoluminescence measurements of such hybrid metal-semiconductor nanostructures reveal large enhancement of the emission intensity. Our concept of epitaxial self-alignment enables the integration of plasmonic functionality with electronic and photonic semiconductor devices operating down to the single QD level.

  1. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  2. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  3. Optical properties of Si and Ge nanocrystals: Parameter-free calculations

    NASA Astrophysics Data System (ADS)

    Ramos, L. E.; Weissker, H.-Ch.; Furthmüller, J.; Bechstedt, F.

    2005-12-01

    The cover picture of the current issue refers to the Edi-tor's Choice article of Ramos et al. [1]. The paper gives an overview of the electronic and optical properties of silicon and germanium nanocrystals determined by state-of-the-art ab initio methods. Nanocrystals have promising applications in opto-electronic devices, since they can be used to confine electrons and holes and facilitate radiative recombination. Since meas-urements for single nanoparticles are difficult to make, ab initio theoretical investigations become important to understand the mechanisms of luminescence.The cover picture shows nanocrystals of four sizes with tetrahedral coordination whose dangling bonds at the surface are passivated with hydrogen. As often observed in experiments, the nanocrystals are not perfectly spherical, but contain facets. Apart from the size of the nanocrystals, which determines the quantum confinement, the way their dangling bonds are passivated is relevant for their electronic and optical properties. For instance, the passivation with hydroxyls reduces the quantum confine-ment. On the other hand, the oxidation of the silicon nanocrys-tals increases the quantum confinement and reduces the effect of single surface terminations on the gap. Due to the oscillator strengths of the lowest-energy optical transitions, Ge nanocrys-tals are in principle more suitable for opto-electronic applica-tions than Si nanocrystals.The first author, Luis E. Ramos, is a postdoc at the Institute of Solid-State Physics and Optics (IFTO), Friedrich-Schiller University Jena, Germany. He investigates electronic and optical properties of semiconductor nanocrystallites and is a member of the European Network of Excellence NANO-QUANTA and of the European Theoretical Spectroscopy Facility (ETSF).

  4. Modifying growth of perylene diimide nanocrystals with poly(3-hexyl thiophene) as additives

    NASA Astrophysics Data System (ADS)

    Bu, Laju; Hayward, Ryan

    2014-03-01

    The shape, size, and crystallinity of organic semiconductors play vital roles in their applications in optoelectronics. Various methods to control crystallization of organic semiconductors, including thermal/solvent annealing, addition of poor solvents, and chemical structure modification, have been applied to improve the performance of organic photovoltaics. While soluble additives controlled crystallization are commonly found in biomineralization, pharmaceutics, and food science, they have rarely been applied to organic semiconductors. Here, we show that a p-type polymer, P3HT, serves as a soluble additive in crystallization of a n-type semiconductor, perylene diimide (PDI), by preferentially adsorbing on lateral crystal faces, which reduce lateral growth of PDI crystals relative to longitudinal growth, yielding extended 1-D nanofibers. Upon subsequent crystallization of P3HT, the PDI nanofibers serve as efficient nucleation sties, resulting in shish-kebab like p/n heterostuctures. Using ultrasound to enhance nucleation of PDI crystals, variations in P3HT molecular weight and concentration, and sonication temperature, allow PDI nanocrystal size and uniformity to be tuned. The uniform PDI nanocrystals can act as seeds to crystallize additional PDI to get segmented nanocrystals.

  5. Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

    PubMed Central

    Diederich, Geoffrey; O'Connor, Timothy; Moroz, Pavel; Kinder, Erich; Kohn, Elena; Perera, Dimuthu; Lorek, Ryan; Lambright, Scott; Imboden, Martene; Zamkov, Mikhail

    2012-01-01

    Conjoining different semiconductor materials in a single nano-composite provides synthetic means for the development of novel optoelectronic materials offering a superior control over the spatial distribution of charge carriers across material interfaces. As this study demonstrates, a combination of donor-acceptor nanocrystal (NC) domains in a single nanoparticle can lead to the realization of efficient photocatalytic1-5 materials, while a layered assembly of donor- and acceptor-like nanocrystals films gives rise to photovoltaic materials. Initially the paper focuses on the synthesis of composite inorganic nanocrystals, comprising linearly stacked ZnSe, CdS, and Pt domains, which jointly promote photoinduced charge separation. These structures are used in aqueous solutions for the photocatalysis of water under solar radiation, resulting in the production of H2 gas. To enhance the photoinduced separation of charges, a nanorod morphology with a linear gradient originating from an intrinsic electric field is used5. The inter-domain energetics are then optimized to drive photogenerated electrons toward the Pt catalytic site while expelling the holes to the surface of ZnSe domains for sacrificial regeneration (via methanol). Here we show that the only efficient way to produce hydrogen is to use electron-donating ligands to passivate the surface states by tuning the energy level alignment at the semiconductor-ligand interface. Stable and efficient reduction of water is allowed by these ligands due to the fact that they fill vacancies in the valence band of the semiconductor domain, preventing energetic holes from degrading it. Specifically, we show that the energy of the hole is transferred to the ligand moiety, leaving the semiconductor domain functional. This enables us to return the entire nanocrystal-ligand system to a functional state, when the ligands are degraded, by simply adding fresh ligands to the system4. To promote a photovoltaic charge separation, we use a

  6. Pulsed laser ablation growth and doping of epitaxial compound semiconductor films

    SciTech Connect

    Lowndes, D.H.; Rouleau, C.M.; Geohegan, D.B.; Budai, J.D.; Poker, D.B.; Puretzky, A.A.; Strauss, M.A.; Pedraza, A.J.; Park, J.W.

    1995-12-01

    Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories.

  7. Hybrid bulk heterojunction solar cells based on low band gap polymers and CdSe nanocrystals

    NASA Astrophysics Data System (ADS)

    Dayneko, Sergey; Tameev, Alexey; Tedoradze, Marine; Martynov, Igor; Linkov, Pavel; Samokhvalov, Pavel; Nabiev, Igor; Chistyakov, Alexander

    2014-03-01

    Solar energy converters based on organic semiconductors are inexpensive, can be layered onto flexible surfaces, and show great promise for photovoltaics. In bulk heterojunction polymer solar cells, charges are separated at the interface of two materials, an electron donor and an electron acceptor. Typically, only the donor effectively absorbs light. Therefore, the use of an acceptor with a wide absorption spectrum and high extinction coefficient and charge mobility should increase the efficiency of bulk heterojunction polymer solar cells. Semiconductor nanocrystals (quantum dots and rods) are good candidate acceptors for these solar cells. Recently, most progress in the development of bulk heterojunction polymer solar cells was achieved using PCBM, a traditional fullerene acceptor, and two low band gap polymers, poly[N- 9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) and poly4,8-bis[(2- ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b] thiophenediyl (PTB7). Therefore, the possibility of combining these polymers with semiconductor nanocrystals deserves consideration. Here, we present the first comparison of solar cells based on PCDTBT and PTB7 where CdSe quantum dots serve as acceptors. We have found that PTB7-based cells are more efficient than PCDTBT-based ones. The efficiency also strongly depends on the nanocrystal size. An increase in the QD diameter from 5 to 10 nm causes a more than fourfold increase in the cell efficiency. This is determined by the relationship between the nanoparticle size and energy spectrum, its pattern clearly demonstrating how the mutual positions of the donor and acceptor levels affect the solar cell efficiency. These results will help to develop novel, improved nanohybrid components of solar cells based on organic semiconductors and semiconductor nanocrystals.

  8. Phosphate-free synthesis, optical absorption and photoelectric properties of Cu2ZnGeS4 and Cu2ZnGeSe4 uniform nanocrystals.

    PubMed

    Shi, Liang; Yin, Peiqun

    2013-10-01

    Copper-based quaternary chalcogenide semiconductor Cu2ZnGeS4 and Cu2ZnGeSe4 nanocrystals have been synthesized successfully via a simple and convenient one-pot phosphine-free solution approach. Oleylamine was used as both the solvent and reductant for Se or S and benefited the formation of homogeneous quaternary nanocrystals. Scanning transmission electron microscopy-EDS elemental mapping confirms the uniform spatial distribution of four elements in nanocrystals. UV-Vis absorption spectra of Cu2ZnGeS4 and Cu2ZnGeSe4 nanocrystals show strong photon absorption in the entire visible range. The photoresponsive behavior indicates the potential application of Cu2ZnGeSe4 nanocrystals in solar energy conversion systems. PMID:23900582

  9. An ensemble-based method to assess the quality of a sample of nanocrystals as single photon emitters

    NASA Astrophysics Data System (ADS)

    Vezzoli, Stefano; Shojaii, Seyedruhollah; Cialdi, Simone; Cipriani, Daniele; Castelli, Fabrizio; Paris, Matteo G. A.; Carbone, Luigi; Davide Cozzoli, P.; Giacobino, Elisabeth; Bramati, Alberto

    2013-07-01

    Colloidal semiconductor nanocrystals are among the best candidates for realizing a nano-structured single photon source at room temperature. In this paper we present a new and efficient optical method to assess the quality of a sample of nanocrystals as single-photon emitters, by an ensemble measurement of photoluminescence. We relate the ensemble photoluminescence measurements to the photon statistics of single emitters by a simple theoretical model. As an example we compare two different kinds of CdSe/CdS dot-in-rods, showing a similar degree of single photon emission when observed on a selection of single nanocrystals. The results are compared with anti-bunching measurements realized on single nanocrystals of the two kinds.

  10. Nanocrystal solids: Order and progress

    NASA Astrophysics Data System (ADS)

    Delerue, Christophe

    2016-05-01

    Quantification of structural disorder and electron localization in superlattices of colloidal nanocrystals shows that minimizing variations in size and epitaxial connections is key to enhance the electronic properties of these materials.

  11. Early stage of nanocrystal growth

    SciTech Connect

    2012-01-01

    Berkeley Lab researchers at the Molecular Foundry have elucidated important mechanisms behind oriented attachment, the phenomenon that drives biomineralization and the growth of nanocrystals. This electron microscopy movie shows the early stage of nanocrystal growth. Nanoparticles make transient contact at many points and orientations until their lattices are perfectly matched. The particles then make a sudden jump-to-contact to form attached aggregates. (Movie courtesy of Jim DeYoreo)

  12. Nonradiative Auger recombination of biexcitons in CdSe/CdS core-shell nanocrystal quantum dots

    NASA Astrophysics Data System (ADS)

    Vaxenburg, Roman; Rodina, Anna; Lifshitz, Efrat; Efros, Alexander

    Semiconductor nanocrystals are known for their applicative potential as light-emitting components in lasers and LEDs, as well as light absorbers in solar cells. The performance of these nanocrystal-based devices, however, strongly depends on the dissipative nonradiative Auger recombination. The study of dynamics of the Auger processes is therefore of key importance in connection with the performance of nanocrystals devices. Here we report on a theoretical study of the Auger recombination dynamics of biexcitons in CdSe/CdS core-shell nanocrystals. Biexcitons can decay by the Auger process via negative or positive trion recombination channels. We study the dependence of the rate of each one of these channels on the angular momentum of the initial biexciton state, nanocrystal geometry, and temperature. We observe that the overall dependence of the rates of both channels is strongly oscillating with nanocrystal geometry, indicating large differences in the Auger rates in nanocrystals of similar size. We find that the rate of the negative trion channel is independent of the initial biexciton angular momentum and is generally slower than the rate of the positive trion channel, which, in contrast, is sensitive to the biexciton angular momentum. Further, we demonstrate that by variation of temperature the Auger rate can be varied across a wide range of values.

  13. Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.

    PubMed

    Swisher, Sarah L; Volkman, Steven K; Subramanian, Vivek

    2015-05-20

    Semiconducting metal oxides (ZnO, SnO2, In2O3, and combinations thereof) are a uniquely interesting family of materials because of their high carrier mobilities in the amorphous and generally disordered states, and solution-processed routes to these materials are of particular interest to the printed electronics community. Colloidal nanocrystal routes to these materials are particularly interesting, because nanocrystals may be formulated with tunable surface properties into stable inks, and printed to form devices in an additive manner. We report our investigation of an In2O3 nanocrystal synthesis for high-performance solution-deposited semiconductor layers for thin-film transistors (TFTs). We studied the effects of various synthesis parameters on the nanocrystals themselves, and how those changes ultimately impacted the performance of TFTs. Using a sintered film of solution-deposited In2O3 nanocrystals as the TFT channel material, we fabricated devices that exhibit field effect mobility of 10 cm(2)/(V s) and an on/off current ratio greater than 1 × 10(6). These results outperform previous air-stable nanocrystal TFTs, and demonstrate the suitability of colloidal nanocrystal inks for high-performance printed electronics. PMID:25915094

  14. The dependence of lead-salt nanocrystal properties on morphology and dielectric environment

    NASA Astrophysics Data System (ADS)

    Bartnik, Adam Christopher

    The IV-VI semiconductors, and specifically the lead-salts (PbS, PbSe, and PbTe), are a natural choice for nanocrystal science. In nanocrystals, because of their narrow band gap, small effective masses, and large dielectric constants, they offer a unique combination of both strong confinement and strong dielectric contrast with their environment. Studying how these two effects modify optical and electrical properties of nanocrystals will be the topic of this dissertation. We begin with a summary of the synthesis of high-quality PbS and PbSe nanocrystals. Special care is taken to explain the chemical procedures in detail to an audience not expected to have significant prior chemistry knowledge. The synthesized nanocrystals have bright and tunable emission that spans the edge of the visible to the near-IR spectrum (700--1800 nm), and they are capped with organic ligands making them easily adaptable to different substrates or hosts. This combination of high optical quality and flexible device engineering make them extremely desirable for application. Moving beyond single-material nanocrystals, we next explore nanocrystal heterostructures, specifically materials with a spherical core of one semiconductor and a shell of another. Core-shell structures are commonly used in nanocrystals as a method to separate the core material, where the electrons and holes are expected to stay, from interfering effects at the surface. This typically results in improvements in stability and fluorescence quantum efficiency. To that end, we develop a model to explain how confinement plays out across abrupt changes in material, focusing on the optical and electrical properties of recently synthesized PbSe/PbS core-shell quantum dots. We show that for typical sizes of these nanocrystals, a novel type of nanocrystal heterostructure is created, where electrons and holes extend uniformly across the abrupt material boundary, and the shell does not act as a protecting layer. For very large sizes

  15. (Plasmonic Metal Core)/(Semiconductor Shell) Nanostructures

    NASA Astrophysics Data System (ADS)

    Fang, Caihong

    Over the past several years, integration of metal nanocrystals that can support localized surface plasmon has been demonstrated as one of the most promising methods to the improvement of the light-harvesting efficiency of semiconductors. Ag and Au nanocrystals have been extensively hybridized with semiconductors by either deposition or anchoring. However, metal nanocrystals tend to aggregate, reshape, detach, or grow into large nanocrystals, leading to a loss of the unique properties seen in the original nanocrystals. Fortunately, core/shell nanostructures, circumventing the aforementioned problems, have been demonstrated to exhibit superior photoactivities. To further improve the light-harvesting applications of (plasmonic metal core)/(semiconductor shell) nanostructures, it is vital to understand the plasmonic and structural evolutions during the preparation processes, design novel hybrid nanostructures, and improve their light-harvesting performances. In this thesis, I therefore studied the plasmonic and structural evolutions during the formation of (Ag core)/(Ag2S shell) nanostructures. Moreover, I also prepared (noble metal core)/(TiO2 shell) nanostructures and investigated their plasmonic properties and photon-harvesting applications. Clear understanding of the sulfidation process can enable fine control of the plasmonic properties as well as the structural composition of Ag/Ag 2S nanomaterials. Therefore, I investigated the plasmonic and structural variations during the sulfidation process of Ag nanocubes both experimentally and numerically. The sulfidation reactions were carried out at both the ensemble and single-particle levels. Electrodynamic simulations were also employed to study the variations of the plasmonic properties and plasmon modes. Both experiment and simulation results revealed that sulfidation initiates at the vertices of Ag nanocubes. Ag nanocubes are then gradually truncated and each nanocube becomes a nanosphere eventually. The cubic

  16. Bunching and antibunching in the fluorescence of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Messin, G.; Hermier, J. P.; Giacobino, E.; Desbiolles, P.; Dahan, M.

    2001-12-01

    The fluorescence of single-colloidal CdSe quantum dots is investigated at room temperature by means of the autocorrelation function over a time scale of almost 12 orders of magnitude. Over a short time scale, the autocorrelation function shows complete antibunching, indicating single-photon emission and atomiclike behavior. Over longer time scales (up to tens of seconds), we measure a bunching effect that is due to fluorescence intermittency and that cannot be described by fluctuations between two states with constant rates. The autocorrelation function also exhibits nonstationary behavior related to power-law distributions of ON and OFF times.

  17. Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

    DOEpatents

    Ren, Zhifeng; Chen, Gang; Poudel, Bed; Kumar, Shankar; Wang, Wenzhong; Dresselhaus, Mildred

    2007-08-14

    The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

  18. Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2007-01-01

    The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

  19. Synthesis and photocatalytic properties of multi-morphological AuCu3-ZnO hybrid nanocrystals

    NASA Astrophysics Data System (ADS)

    Zeng, Deqian; Chen, Yuanzhi; Peng, Jian; Xie, Qingshui; Peng, Dong-Liang

    2015-10-01

    Noble metal-semiconductor hybrid nanocrystals represent an important class of materials for many potential applications, especially for photocatalysis. The utilization of transition metals to form alloys with noble metals can not only reduce the preparation costs, but may also offer tunable optical and catalytic properties for a broader range of applications. In this study, we report on the solution synthesis of AuCu3-ZnO hybrid nanocrystals with three interesting morphologies, including urchin-like, flower-like and multipod-like nanocrystals. In the synthetic strategy, Au-Cu bimetallic alloy seeds formed in situ are used to induce the heteroepitaxial growth of ZnO nanocrystals on the surface of bimetallic alloy cores; thus different types of morphologies can be achieved by controlling the reaction conditions. Through high-resolution transmission electron microscopy observations, well-defined interfaces between ZnO and AuCu3 are observed, which indicate that ZnO has a (0001) orientation and prefers to grow on AuCu3 {111} facets. The as-prepared hybrid nanocrystals demonstrate morphology- and composition-dependent surface plasmon resonance (SPR) absorption bands. In addition, much higher photocatalytic efficiency than pure ZnO nanocrystals is observed for the hybrid nanocrystals in the degradation of methylene blue. In particular, the multipod-like AuCu3-ZnO hybrid nanocrystals show the highest catalytic performance, as well as more than three times higher photocurrent density than the pure ZnO sample. The reported synthetic strategy provides a facile route to the effective combination of a plasmonic alloy with semiconductor components at the nanoscale in a controlled manner.

  20. Assemblies of Cellulose Nanocrystals

    NASA Astrophysics Data System (ADS)

    Kumacheva, Eugenia

    The entropically driven coassembly of nanorods (cellulose nanocrystals, CNCs) and different types of nanoparticles (NPs), including dye-labeled latex NPs, carbon dots and plasmonic NPs was experimentally studied in aqueous suspensions and in solid films. In mixed CNC-NP suspensions, phase separation into an isotropic NP-rich and a chiral nematic CNC-rich phase took place; the latter contained a significant amount of NPs. Drying the mixed suspension resulted in CNC-NP films with planar disordered layers of NPs, which alternated with chiral nematic CNC-rich regions. In addition, NPs were embedded in the chiral nematic domains. The stratified morphology of the films, together with a random distribution of NPs in the anisotropic phase, led to the films having close-to-uniform fluorescence, birefringence, and circular dichroism properties.

  1. Luminescent nanocrystal stress gauge

    PubMed Central

    Choi, Charina L.; Koski, Kristie J.; Olson, Andrew C. K.; Alivisatos, A. Paul

    2010-01-01

    Microscale mechanical forces can determine important outcomes ranging from the site of material fracture to stem cell fate. However, local stresses in a vast majority of systems cannot be measured due to the limitations of current techniques. In this work, we present the design and implementation of the CdSe-CdS core-shell tetrapod nanocrystal, a local stress sensor with bright luminescence readout. We calibrate the tetrapod luminescence response to stress and use the luminescence signal to report the spatial distribution of local stresses in single polyester fibers under uniaxial strain. The bright stress-dependent emission of the tetrapod, its nanoscale size, and its colloidal nature provide a unique tool that may be incorporated into a variety of micromechanical systems including materials and biological samples to quantify local stresses with high spatial resolution. PMID:21098301

  2. Size dependence of negative trion Auger recombination in photodoped CdSe nanocrystals.

    PubMed

    Cohn, Alicia W; Rinehart, Jeffrey D; Schimpf, Alina M; Weaver, Amanda L; Gamelin, Daniel R

    2014-01-01

    We report a systematic investigation of the size dependence of negative trion (T(-)) Auger recombination rates in free-standing colloidal CdSe nanocrystals. Colloidal n-type CdSe nanocrystals of various radii have been prepared photochemically, and their trion decay dynamics have been measured using time-resolved photoluminescence spectroscopy. Trion Auger time constants spanning 3 orders of magnitude are observed, ranging from 57 ps (radius R = 1.4 nm) to 2.2 ns (R = 3.2 nm). The data reveal a substantially stronger size dependence than found for bi- or multiexciton Auger recombination in CdSe or other semiconductor nanocrystals, scaling in proportion to R(4.3). PMID:24328385

  3. Sulfur antisite-induced intrinsic high-temperature ferromagnetism in Ag2S:Y nanocrystals.

    PubMed

    Wang, Pan; Yang, Tianye; Zhao, Rui; Zhang, Mingzhe

    2016-04-21

    There is an urgent need for a complete understanding of intrinsic ferromagnetism, due to the necessity for application of ferromagnetic semiconductors. Here, further insight into the magnetic mechanism of sulfur antisite-induced intrinsic high-temperature ferromagnetism is investigated in Ag2S:Y nanocrystals. The gas-liquid phase chemical deposition method is adopted to obtain the monoclinic Ag2S:Y nanocrystals. The field and temperature-dependent magnetization measurements demonstrate the robust high-temperature ferromagnetism of Ag2S:Y nanocrystals. As revealed in the magnetic origin study from first-principles calculations, the intrinsic sulfur antisite defect is only responsible for the creation of a magnetic moment which mainly comes from the S 3p and Ag 4d orbitals. Such a mechanism, which is essentially different from those of dopants and other native defects, provides new insight into the origin of the magnetism. PMID:27009760

  4. Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency.

    PubMed

    Yang, C; Zhou, Z F; Li, J W; Yang, X X; Qin, W; Jiang, R; Guo, N G; Wang, Y; Sun, C Q

    2012-02-21

    With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II-VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experience red shift associated with creation of low frequency Raman acoustic modes that undergo blue shift with decreasing the dimensional scale. In order to understand the common origin of the size dependency of these seemingly irrelevant properties, we formulated these quantities for CdS, ZnS, and CdSe semiconductors from the perspectives of bond order-length-strength correlation and the local bond averaging approach. Consistency between the theory predictions and the measured size dependence of these quantities clarified that the undercoordination-induced local strain and quantum entrapment and the varied fraction of undercoordinated atoms of the entire solid correlate these quantities and dominate their size effect. PMID:22241243

  5. Semiconductor Cubing

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

  6. Silicon nanocrystal-noble metal hybrid nanoparticles

    NASA Astrophysics Data System (ADS)

    Sugimoto, H.; Fujii, M.; Imakita, K.

    2016-05-01

    We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion.We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion. Electronic supplementary information (ESI) available: Additional TEM images and extinction spectra of Si-metal hybrid NPs are shown in Fig. S1

  7. Atomic-scale studies of hydrogenated semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Mayne, A. J.; Riedel, D.; Comtet, G.; Dujardin, G.

    The adsorption of hydrogen on semiconductors strongly modifies the electronic and chemical properties of the surfaces, whether on the surface or in the sub-surface region. This has been the starting point, in recent years, of many new areas of research and technology. This paper will discuss the properties, at the atomic scale, of hydrogenated semiconductor surfaces studied with scanning tunnelling microscopy (STM) and synchrotron radiation. Four semiconductor surfaces will be described - germanium(1 1 1), silicon(1 0 0), silicon carbide(1 0 0) and diamond(1 0 0). Each surface has its particularities in terms of the physical and electronic structure and in regard to the adsorption of hydrogen. The manipulation of hydrogen on these surfaces by electronic excitation using electrons from the STM tip will be discussed in detail highlighting the excitation mechanisms. The reactivity of these surfaces towards various molecules and semiconductor nanocrystals will be illustrated.

  8. Controlled Crystallinity and Fundamental Coupling Interactions in Nanocrystals

    NASA Astrophysics Data System (ADS)

    Ouyang, Min

    2009-03-01

    Metal and semiconductor nanocrystals show many unusual properties and functionalities, and can serve as model system to explore fundamental quantum and classical coupling interactions as well as building blocks of many practical applications. However, because of their small size, these nanoparticles typically exhibit different crystalline properties as compared with their bulk counterpart, and controlling crystallinity (and structural defects) within nanoparticles has posed significant technical challenges. In this talk, I will firstly apply silver metal nanoparticles as an example and present a novel chemical synthetic technique to achieve unprecedented crystallinity control at the nanoscale. This engineering of nanocrystallinity enables manipulation of intrinsic chemical functionalities, physical properties as well as nano-device performance [1]. For example, I will highlight that electron- phonon coupling constant can be significantly reduced by about four times and elastic modulus is increased ˜40% in perfect single crystalline silver nanoparticles as compared with those in disordered twinned nanoparticles. One important application of metal nanoparticles is nanoscale sensors. I will thus demonstrate that performance of nanoparticles based molecular sensing devices can be optimized with three times improvement of figure-of-merit if perfect single crystalline nanoparticles are applied. Lastly, I will present our related studies on semiconductor nanocrystals as well as their hybrid heterostructures. These discussions should offer important implications for our understanding of the fundamental properties at nanoscale and potential applications of metal nanoparticles. [4pt] [1] Yun Tang and Min Ouyang, Nature Materials, 6, 754, 2007.

  9. Room temperature d0 ferromagnetism in ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Proshchenko, Vitaly; Horoz, Sabit; Tang, Jinke; Dahnovsky, Yuri

    2016-06-01

    Room temperature ferromagnetic semiconductors have a great deal of advantage because of their easy integration into semiconductor devices. ZnS nanocrystals (NCs), bulk, and surfaces exhibit d0 ferromagnetism at room temperature. The experiments reveal that NC ferromagnetism takes place at low and room temperatures only due to Zn vacancies (S vacancies do not contribute). To understand the mechanism of d0 ferromagnetism, we introduce the surface-bulk model of a nanocrystal, which includes both surface and bulk magnetizations. The calculations demonstrate that the surface has the higher than bulk magnetization. We find the mechanism of the ferromagnetism is due to sulfur s- and p-electrons in a tetrahedral crystal field. The bulk magnetic moment increases with Zn vacancy concentration at small concentrations and then goes down at larger concentrations. A surface magnetic moment behaves differently with the concentration. It is always a monotonically rising function. We find that the total NC magnetic moment increases with the size and concentration of Zn vacancies (only low concentrations). We also study the magnetization per unit cell where we find that it decreases for the surface and increases for bulk magnetism with the NC size.

  10. Nanocrystal-polymer solar cells

    NASA Astrophysics Data System (ADS)

    Huynh, Wendy Uyen

    The ability to structure materials on a nanometer dimension enables the processes of solar energy conversion to be optimized at their most fundamental length scale. In semiconducting nanocrystals, optical absorption and electrical transport can be tailored by changing their radius and length, respectively. The unique features of quantum confinement and shape manipulation characteristic for inorganic nanocrystals can be utilized to fabricate solar cells with properties not observed in organic or conventional inorganic solar cells. Furthermore, their solution processibility provides fabrication advantages in the production of low cost, large area, and flexible solar cells. By blending organic conjugated polymers with CdSe nanocrystals efficient thin film solar cells have been constructed. Intimate contact for efficient charge transfer between the polymer and nanocrystal components of the blend was achieved by removing the organic ligands on the surface of the nanocrystal and by using solvent mixtures. Control of the nanocrystal length and therefore the distance on which electrons are transported directly through a thin film device enabled the creation of direct pathways for the transport of electrons. In addition, tuning the band gap by altering the nanocrystal radius as well as using alternate materials such as CdTe the overlap between the absorption spectrum of the cell and the solar emission spectrum could be optimized. A photovoltaic device consisting of 7nm by 60nm CdSe nanorods and the conjugated polymer poly-3(hexylthiophene) was assembled from solution with an external quantum efficiency of over 54% and a monochromatic power conversion efficiency of up to 7% under illumination at low light intensity. Under AM 1.5 Global solar conditions, we obtained a power conversion efficiency of 1.7%.

  11. Off-Resonance Photosensitization of a Photorefractive Polymer Composite Using PbS Nanocrystals

    SciTech Connect

    Moon, Jong-Sik; Liang, Yichen; Stevens, Tyler E.; Monson, Todd C.; Huber, Dale L.; Mahala, Benjamin D.; Winiarz, Jeffrey G.

    2015-05-26

    The photosensitization of photorefractive polymeric composites for operation at 633 nm is accomplished through the inclusion of narrow band gap semiconductor nanocrystals composed of PbS. Unlike previous studies involving photosensitization of photorefractive polymer composites with inorganic nanocrystals, we employ an off-resonance approach where the first excitonic transition associated with the PbS nanocrystals lies at ~1220 nm and not the wavelength of operation. Using this methodology, internal diffraction efficiencies exceeding 82%, two-beam-coupling gain coefficients of 211 cm–1, and response times of 34 ms have been observed, representing some of the best figures of merit reported for this class of materials. Furthermore, these data demonstrate the ability of semiconductor nanocrystals to compete effectively with traditional organic photosensitizers. In addition to superior performance, this approach also offers an inexpensive and easy means by which to photosensitize composite materials. Additionally, the photoconductive characteristics of the composites used for this study will also be considered.

  12. Off-Resonance Photosensitization of a Photorefractive Polymer Composite Using PbS Nanocrystals

    DOE PAGESBeta

    Moon, Jong-Sik; Liang, Yichen; Stevens, Tyler E.; Monson, Todd C.; Huber, Dale L.; Mahala, Benjamin D.; Winiarz, Jeffrey G.

    2015-05-26

    The photosensitization of photorefractive polymeric composites for operation at 633 nm is accomplished through the inclusion of narrow band gap semiconductor nanocrystals composed of PbS. Unlike previous studies involving photosensitization of photorefractive polymer composites with inorganic nanocrystals, we employ an off-resonance approach where the first excitonic transition associated with the PbS nanocrystals lies at ~1220 nm and not the wavelength of operation. Using this methodology, internal diffraction efficiencies exceeding 82%, two-beam-coupling gain coefficients of 211 cm–1, and response times of 34 ms have been observed, representing some of the best figures of merit reported for this class of materials. Furthermore,more » these data demonstrate the ability of semiconductor nanocrystals to compete effectively with traditional organic photosensitizers. In addition to superior performance, this approach also offers an inexpensive and easy means by which to photosensitize composite materials. Additionally, the photoconductive characteristics of the composites used for this study will also be considered.« less

  13. High efficiency solution processed sintered CdTe nanocrystal solar cells: the role of interfaces.

    PubMed

    Panthani, Matthew G; Kurley, J Matthew; Crisp, Ryan W; Dietz, Travis C; Ezzyat, Taha; Luther, Joseph M; Talapin, Dmitri V

    2014-02-12

    Solution processing of photovoltaic semiconducting layers offers the potential for drastic cost reduction through improved materials utilization and high device throughput. One compelling solution-based processing strategy utilizes semiconductor layers produced by sintering nanocrystals into large-grain semiconductors at relatively low temperatures. Using n-ZnO/p-CdTe as a model system, we fabricate sintered CdTe nanocrystal solar cells processed at 350 °C with power conversion efficiencies (PCE) as high as 12.3%. JSC of over 25 mA cm(-2) are achieved, which are comparable or higher than those achieved using traditional, close-space sublimated CdTe. We find that the VOC can be substantially increased by applying forward bias for short periods of time. Capacitance measurements as well as intensity- and temperature-dependent analysis indicate that the increased VOC is likely due to relaxation of an energetic barrier at the ITO/CdTe interface. PMID:24364381

  14. Optical properties and ensemble characteristics of size purified Silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Miller, Joseph Bradley

    Nanotechnology is at the forefront of current scientific research and nanocrystals are being hailed as the 'artificial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently experimenting with to create our own SiNCs and the one utilized to create the SiNCs used in this study. The underlying physics that governs the unique behavior of SiNCs is then presented. The properties of the as-produced SiNCs are determined to depend strongly on surface passivation and environment. Size purification, an important aspect of nanomaterial utilization, was successfully performed on our SiNCs though density gradient ultracentrifugation. We demonstrate that the size-purified fractions exhibit an enhanced ability for colloidal self-assembly, with better aligned nanocrystal energy levels which promotes greater photostability in close-packed films and produces a slight increase in photoluminescence (PL) quantum yield. The qualities displayed by the fractions are exploited to form SiNC clusters that exhibit photostable PL. An analysis of SiNC cluster (from individual nanocrystals to collections of more than one thousand) blinking and PL shows an improvement in their PL emitting 'on' times. Pure SiNC films and SiNC-polymer nanocomposites are created and the dependence of their PL on temperature is measured. For such nanocomposites, the coupling between the 'coffee-ring' effect and liquid-liquid phase separation is also examined for ternary mixtures of solvent, polymer and semiconducting nanocrystal. We discover that with the right SiNC-polymer concentration and polymer

  15. Laser-induced growth of nanocrystals embedded in porous materials

    NASA Astrophysics Data System (ADS)

    Capoen, Bruno; Chahadih, Abdallah; El Hamzaoui, Hicham; Cristini, Odile; Bouazaoui, Mohamed

    2013-06-01

    Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrystals in different kinds of silicate matrices. This paper summarizes the most recent works developed in our group, where the investigated nanoparticles are either made of metal (gold) or chalcogenide semiconductors (CdS, PbS), grown in precursor-impregnated porous xerogels under different laser irradiations. This review is associated to new results on silver nanocrystals in the same kind of matrices. It is shown that, depending on the employed laser, the particles can be formed near the sample surface or deep inside the silica matrix. Photothermal and/or photochemical mechanisms may be invoked to explain the nanoparticle growth, depending on the laser, precursor, and matrix. One striking result is that metal salt reduction, necessary to the production of the corresponding nanoparticles, can efficiently occur due to the thermal wrenching of electrons from the matrix itself or due to multiphoton absorption of the laser light by a reducer additive in femtosecond regime. Very localized semiconductor quantum dots could also be generated using ultrashort pulses, but while PbS nanoparticles grow faster than CdS particles due to one-photon absorption, this better efficiency is counterbalanced by a sensitivity to oxidation. In most cases where the reaction efficiency is high, particles larger than the pores have been obtained, showing that a fast diffusion of the species through the interconnected porosity can modify the matrix itself. Based on our experience in these techniques, we compare several examples of laser-induced nanocrystal growth in porous silica xerogels, which allows

  16. Laser-induced growth of nanocrystals embedded in porous materials

    PubMed Central

    2013-01-01

    Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrystals in different kinds of silicate matrices. This paper summarizes the most recent works developed in our group, where the investigated nanoparticles are either made of metal (gold) or chalcogenide semiconductors (CdS, PbS), grown in precursor-impregnated porous xerogels under different laser irradiations. This review is associated to new results on silver nanocrystals in the same kind of matrices. It is shown that, depending on the employed laser, the particles can be formed near the sample surface or deep inside the silica matrix. Photothermal and/or photochemical mechanisms may be invoked to explain the nanoparticle growth, depending on the laser, precursor, and matrix. One striking result is that metal salt reduction, necessary to the production of the corresponding nanoparticles, can efficiently occur due to the thermal wrenching of electrons from the matrix itself or due to multiphoton absorption of the laser light by a reducer additive in femtosecond regime. Very localized semiconductor quantum dots could also be generated using ultrashort pulses, but while PbS nanoparticles grow faster than CdS particles due to one-photon absorption, this better efficiency is counterbalanced by a sensitivity to oxidation. In most cases where the reaction efficiency is high, particles larger than the pores have been obtained, showing that a fast diffusion of the species through the interconnected porosity can modify the matrix itself. Based on our experience in these techniques, we compare several examples of laser-induced nanocrystal growth in porous silica xerogels, which allows

  17. Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model.

    PubMed

    Doğan, İlker; van de Sanden, Mauritius C M

    2015-01-01

    Analysis of the size distribution of nanocrystals is a critical requirement for the processing and optimization of their size-dependent properties. The common techniques used for the size analysis are transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence spectroscopy (PL). These techniques, however, are not suitable for analyzing the nanocrystal size distribution in a fast, non-destructive and a reliable manner at the same time. Our aim in this work is to demonstrate that size distribution of semiconductor nanocrystals that are subject to size-dependent phonon confinement effects, can be quantitatively estimated in a non-destructive, fast and reliable manner using Raman spectroscopy. Moreover, mixed size distributions can be separately probed, and their respective volumetric ratios can be estimated using this technique. In order to analyze the size distribution, we have formulized an analytical expression of one-particle PCM and projected it onto a generic distribution function that will represent the size distribution of analyzed nanocrystal. As a model experiment, we have analyzed the size distribution of free-standing silicon nanocrystals (Si-NCs) with multi-modal size distributions. The estimated size distributions are in excellent agreement with TEM and PL results, revealing the reliability of our model. PMID:26327524

  18. Influence of dopant distribution on the plasmonic properties of indium tin oxide nanocrystals.

    PubMed

    Lounis, Sebastien D; Runnerstrom, Evan L; Bergerud, Amy; Nordlund, Dennis; Milliron, Delia J

    2014-05-14

    Doped metal oxide nanocrystals represent an exciting frontier for colloidal synthesis of plasmonic materials, displaying unique optoelectronic properties and showing promise for a variety of applications. However, fundamental questions about the nature of doping in these materials remain. In this article, the strong influence of radial dopant distribution on the optoelectronic properties of colloidal indium tin oxide nanocrystals is reported. Comparing elemental depth-profiling by X-ray photoelectron spectroscopy (XPS) with detailed modeling and simulation of the optical extinction of these nanocrystals using the Drude model for free electrons, a correlation between surface segregation of tin ions and the average activation of dopants is observed. A strong influence of surface segregation of tin on the line shape of the localized surface plasmon resonance (LSPR) is also reported. Samples with tin segregated near the surface show a symmetric line shape that suggests weak or no damping of the plasmon by ionized impurities. It is suggested that segregation of tin near the surface facilitates compensation of the dopant ions by electronic defects and oxygen interstitials, thus reducing activation. A core-shell model is proposed to explain the observed differences in line shape. These results demonstrate the nuanced role of dopant distribution in determining the optoelectronic properties of semiconductor nanocrystals and suggest that more detailed study of the distribution and structure of defects in plasmonic colloidal nanocrystals is warranted. PMID:24786283

  19. Influence of Dopant Distribution on the Plasmonic Properties of Indium Tin Oxide Nanocrystals

    SciTech Connect

    Lounis, SD; Runnerstrom, EL; Bergerud, A; Nordlund, D; Milliron, DJ

    2014-05-14

    Doped metal oxide nanocrystals represent an exciting frontier for colloidal synthesis of plasmonic materials, displaying unique optoelectronic properties and showing promise for a variety of applications. However, fundamental questions about the nature of doping in these materials remain. In this article, the strong influence of radial dopant distribution on the optoelectronic properties of colloidal indium tin oxide nanocrystals is reported. Comparing elemental depth-profiling by X-ray photoelectron spectroscopy (XPS) with detailed modeling and simulation of the optical extinction of these nanocrystals using the Drude model for free electrons, a correlation between surface segregation of tin ions and the average activation of dopants is observed. A strong influence of surface segregation of tin on the line shape of the localized surface plasmon resonance (LSPR) is also reported. Samples with tin segregated near the surface show a symmetric line shape that suggests weak or no damping of the plasmon by ionized impurities. It is suggested that segregation of tin near the surface facilitates compensation of the dopant ions by electronic defects and oxygen interstitials, thus reducing activation. A core shell model is proposed to explain the observed differences in line shape. These results demonstrate the nuanced role of dopant distribution in determining the optoelectronic properties of semiconductor nanocrystals and suggest that more detailed study of the distribution and structure of defects in plasmonic colloidal nanocrystals is warranted.

  20. A dual-colored bio-marker made of doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Wu, Y. L.; Fu, S.; Tok, A. I. Y.; Zeng, X. T.; Lim, C. S.; Kwek, L. C.; Boey, F. C. Y.

    2008-08-01

    Bio-compatible ZnO nanocrystals doped with Co, Cu and Ni cations, surface capped with two types of aminosilanes and titania are synthesized by a soft chemical process. Due to the small particle size (2-5 nm), surface functional groups and the high photoluminescence emissions at the UV and blue-violet wavelength ranges, bio-imaging on human osteosarcoma (Mg-63) cells and histiocytic lymphoma U-937 monocyte cells showed blue emission at the nucleus and bright turquoise emission at the cytoplasm simultaneously. This is the first report on dual-color bio-images labeled by one semiconductor nanocrystal colloidal solution. Bright green emission was detected on mung bean seedlings labeled by all the synthesized ZnO nanocrystals. Cytotoxicity tests showed that the aminosilanes capped nanoparticles are non-toxic. Quantum yields of the nanocrystals varied from 79% to 95%. The results showed the potential of the pure ZnO and Co-doped ZnO nanocrystals for live imaging of both human cells and plant systems.