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Sample records for ii-vi semiconductor nanocrystals

  1. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  2. Photophysical Properties of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gong, Ke

    As it is well known, semiconductor nanocrystals (also called quantum dots, QDs) are being actively pursued for use in many different types of luminescent optical materials. These materials include the active media for luminescence downconversion in artificial lighting, lasers, luminescent solar concentrators and many other applications. Chapter 1 gives general introduction of QDs, which describe the basic physical properties and optical properties. Based on the experimental spectroscopic study, a semiquantitative method-effective mass model is employed to give theoretical prediction and guide. The following chapters will talks about several topics respectively. A predictive understanding of the radiative lifetimes is therefore a starting point for the understanding of the use of QDs for these applications. Absorption intensities and radiative lifetimes are fundamental properties of any luminescent material. Meantime, achievement of high efficiency with high working temperature and heterostructure fabrication with manipulation of lattice strain are not easy and need systematic investigation. To make accurate connections between extinction coefficients and radiative recombination rates, chapter 2 will consider three closely related aspects of the size dependent spectroscopy of II-VI QDs. First, it will consider the existing literature on cadmium selenide (CdSe) QD absorption spectra and extinction coefficients. From these results and fine structure considerations Boltzmann weighted radiative lifetimes are calculated. These lifetimes are compared to values measured on very high quality CdSe and CdSe coated with zinc selenide (ZnSe) shells. Second, analogous literature data are analyzed for cadmium telluride (CdTe) nanocrystals and compared to lifetimes measured for very high quality QDs. Furthermore, studies of the absorption and excitation spectra and measured radiative lifetimes for CdTe/CdSe Type-II core/shell QDs are reported. These results are also analyzed in

  3. Structural transformations in II-VI semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricolleau, C.; Audinet, L.; Gandais, M.; Gacoin, T.

    Colloidal CdS and CdS/ZnS nanostructures were obtained by nucleation and growth in colloidal solution. Their mean sizes range between 3 and 10 nm. The structural properties were studied by the use of high-resolution transmission electron microscopy (HRTEM). Phase transition between the metastable cubic blende-type structure and the stable hexagonal wurtzite-type structure was evidenced to be a function of the size of the CdS clusters. The mechanism of the transition involving stacking faults was determined by the heating of CdS clusters at 200 °C for 30 h. Results concerning structural relations between CdS and ZnS that occur during the epitaxial growth of ZnS on the CdS nanocrystals showed the existence of the hexagonal structure of ZnS, which is the high-temperature phase of ZnS.

  4. Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor.

    PubMed

    Grandhi, G Krishnamurthy; Tomar, Renu; Viswanatha, Ranjani

    2012-11-27

    Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and hence on the relative alignment of the energy levels between materials. Despite a high demand to obtain size specific band offsets, very few studies exist where meticulous methods like photoelectron spectroscopy are used. However, semiconductor charging during measurements could result in indirect and possibly inaccurate measurements due to shift in valence and conduction band position. Here, in this report, we devise a novel method to study the band offsets by associating an atomic like state with the conduction band and hence obtaining an internal standard. This is achieved by doping copper in semiconductor nanocrystals, leading to the development of a characteristic intragap Cu-related emission feature assigned to the transition from the conduction band to the atomic-like Cu d state. Using this transition we determine the relative band alignment of II-VI semiconductor nanocrystals as a function of size in the below 10 nm size regime. The results are in excellent agreement with the available photoelectron spectroscopy data as well as the theoretical data. We further use this technique to study the excitonic band edge variation as a function of temperature in CdSe nanocrystals. Additionally, surface electronic structure of CdSe nanocrystals have been studied using quantitative measurements of absolute quantum yield and PL decay studies of the Cu related emission and the excitonic emission. The role of TOP and oleic acid as surface passivating ligand molecules has been studied for the first time.

  5. Synthesis, functionalization, and biological tagging applications of II-VI semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Jun

    Fluorescent labeling of biological molecules is a technique that is used widely for analytical purposes in biotechnology and bioengineering. It typically involves the use of an organic dye molecule linked to a moiety that selectively bonds a particular biological molecule, allowing the detection of the latter by the fluorescence of the dye molecule. Semiconductor nanocrystals or quantum dots have emerged as a new class of fluorescent markers with distinct advantages over the traditional organic dyes. Their attractive properties include narrow, symmetric, and bright emission, continuous excitation by any wavelength smaller than the emission wavelength, broad absorption spectrum, long lifetime, resistance to photobleaching, as well as excellent optical and chemical stability that allows their use in lengthy experiments. The focus of this thesis is the synthesis and surface functionalization of ZnSe quantum dots and (ZnSe)ZnS core-shell nanostructures, and their biological conjugation with DNA and protein. The ability to synthesize different populations of quantum dots with narrow emission spectra permits multiplexing, a property that is very important for simultaneous detection of several analytes, which would be very tedious and expensive if done sequentially. Highly luminescent ZnSe nanocrystals have been synthesized using a hot-injection colloidal method. The synthesis was performed in a stirred batch reactor containing liquid hexadecylamine at 310°C. The precursors were diethylzinc diluted in heptane and selenium powder mixed with trioctylphosphine. The mixture of reactants was injected into the batch reactor and the time of reaction was used to control the size and luminescence emission wavelength of the quantum dots. In order to optimize the process various parameters that can influence the photoluminescence property of quantum dots obtained were investigated, such as surfactant addition, temperature, precursor ratio, and mixing conditions. Capping of the Zn

  6. Chemistry of the Colloidal Group II-VI Nanocrystal Synthesis

    SciTech Connect

    Liu, Haitao

    2007-05-17

    In the last two decades, the field of nanoscience andnanotechnology has witnessed tremendous advancement in the synthesis andapplication of group II-VI colloidal nanocrystals. The synthesis based onhigh temperature decomposition of organometallic precursors has becomeone of the most successful methods of making group II-VI colloidalnanocrystals. This methodis first demonstrated by Bawendi and coworkersin 1993 to prepare cadmium chalcogenide colloidal quantum dots and laterextended by others to prepare other group II-VI quantum dots as well asanisotropic shaped colloidal nanocrystals, such as nanorod and tetrapod.This dissertation focuses on the chemistry of this type of nanocrystalsynthesis. The synthesis of group II-VI nanocrystals was studied bycharacterizing the molecular structures of the precursors and productsand following their time evolution in the synthesis. Based on theseresults, a mechanism was proposed to account for the 2 reaction betweenthe precursors that presumably produces monomer for the growth ofnanocrystals. Theoretical study based on density functional theorycalculations revealed the detailed free energy landscape of the precursordecomposition and monomerformation pathway. Based on the proposedreaction mechanism, a new synthetic method was designed that uses wateras a novel reagent to control the diameter and the aspect ratio of CdSeand CdS nanorods.

  7. Atomic-Scale Characterization of II-VI Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, David J.

    2013-11-01

    Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

  8. Recent Progress in Photocatalysis Mediated by Colloidal II-VI Nanocrystals

    PubMed Central

    Wilker, Molly B; Schnitzenbaumer, Kyle J; Dukovic, Gordana

    2012-01-01

    The use of photoexcited electrons and holes in semiconductor nanocrystals as reduction and oxidation reagents is an intriguing way of harvesting photon energy to drive chemical reactions. This review focuses on recent research efforts to understand and control the photocatalytic processes mediated by colloidal II-VI nanocrystalline materials, such as cadmium and zinc chalcogenides. First, we highlight how nanocrystal properties govern the rates and efficiencies of charge-transfer processes relevant to photocatalysis. We then describe the use of nanocrystal catalyst heterostructures for fuel-forming reactions, most commonly H2 generation. Finally, we review the use of nanocrystal photocatalysis as a synthetic tool for metal–semiconductor nano-heterostructures. PMID:24115781

  9. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  10. Taming excitons in II-VI semiconductor nanowires and nanobelts

    NASA Astrophysics Data System (ADS)

    Xu, Xinlong; Zhang, Qing; Zhang, Jun; Zhou, Yixuan; Xiong, Qihua

    2014-10-01

    Excitons are one of the most important fundamental quasi-particles, and are involved in a variety of processes forming the basis of a wide range of opto-electronic and photonic devices based on II-VI semiconductor nanowires and nanobelts, such as light-emitting diodes, photovoltaic cells, photodetectors and nanolasers. A clear understanding of their properties and unveiling the potential engineering for excitons is of particular importance for the design and optimization of nanoscale opto-electronic and photonic devices. Herein, we present a comprehensive review on discussing the fundamental behaviours of the excitons in one-dimensional (1D) II-VI semiconductor nanomaterials (nanowires and nanobelts). We will start with a focus on the unique properties (origin, generation, etc) and dynamics of excitons and exciton complexes in the II-VI semiconductor nanowires and nanobelts. Then we move to the recent progress on the excitonic response in 1D nanomaterials and focus on the tailoring and engineering of excitonic properties through rational controlling of the physical parameters and conditions, intrinsically and extrinsically. These include (1) exciton-exciton interaction, which is important for 1D nanomaterial nanolasing; (2) exciton-phonon interaction, which has interesting applications for laser cooling; and (3) exciton-plasmon interaction, which is the cornerstone towards the realization of plasmonic lasers. The potential of electric field, morphology and size control for excitonic properties is also discussed. Unveiling and controlling excitonic properties in II-VI semiconductor nanowires and nanobelts would promote the development of 1D nanoscience and nanotechnology.

  11. Electron Paramagnetic Resonance in II-Vi Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Gui-Lin

    This dissertation is devoted to investigation of the electron paramagnetic resonance (EPR) of Mn ^{++} ions in II-VI semiconductor heterostructures, in order to determine how EPR is affected by this layered environment and what new information can be extracted by this technique. We first introduce the concept of the effective spin, and we review the theoretical background of the spin Hamiltonian, for describing the ground state of a paramagnetic ion in a solid. The physical origin of the constituent terms in the spin Hamiltonion are discussed, and their characteristics described, for use at later stages in the thesis. We then analyze the effect on EPR of the potential exchange interaction between the localized d-electrons of the Mn^{++} ions and the band electrons. We predict that such exchange interaction can lead to significant changes in the g-factors of Mn ^{++} ions due to the spin polarization of band electrons, resulting in line shifts of EPR spectra. Although such shifts would be too small to be observed for Mn^{++} ions introduced into bulk semiconductors, we show that the shifts can be significantly larger for Mn^ {++} ions in quantum wells, superlattices, and similar heterostructures, due to the electron confinement effect. This effect of the potential exchange interaction on the EPR spectra of Mn^{++} ions leads us to propose to use the Mn ^{++} ions as built-in localized probes for mapping the wave functions of electronic states in II-VI semiconductor quantum wells and superlattices. We then consider the influence of internal strain on the EPR transitions of Mn^{++} in II-VI semiconductor heterostructures. Our analysis of the changes of the Mn^{++} fine structure indicates that EPR can be used to detect even minute amounts of strain (e.g., strain resulting from as little as 0.01% lattice mismatch can readily be measured). Accordingly, we demonstrate EPR to be an ultrasensitive and probably unique tool for small strain measurements in II-VI

  12. Monolayer II-VI semiconductors: A first-principles prediction

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Li, Xian-Bin; Chen, Nian-Ke; Xie, Sheng-Yi; Tian, Wei Quan; Chen, Yuanping; Xia, Hong; Zhang, S. B.; Sun, Hong-Bo

    2015-09-01

    A systematic study of 32 honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetically stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe, BaTe, and HgTe honeycomb monolayers have a good dynamic stability. The stability of the five oxides is consistent with the work published by Zhuang et al. [Appl. Phys. Lett. 103, 212102 (2013), 10.1063/1.4831972]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P 4 /n m m (129 ) ] and orthorhombic HgS [P 21/m (11 ) ] . The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region. Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin-orbital coupling (SOC) [J. Li et al., arXiv:1412.2528]. Some II-VI partners with less than 5 % lattice mismatch may be used to design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics, and strong correlated electronics.

  13. II-VI Narrow-Bandgap Semiconductors for Optoelectronics

    NASA Astrophysics Data System (ADS)

    Baker, Ian

    The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

  14. Light Emission from Polymer-Semiconductor Nanocrystal (PFO-CdSe/ZnS) Structures

    NASA Astrophysics Data System (ADS)

    Nauka, K.; Gibson, G. A.; Sheng, X.; Yang, C. C.

    2007-04-01

    Electroluminescence was achieved from hybrid conjugated polymer (polyfluorene) — II-VI semiconductor nanocrystal structures. The energy of the carriers injected into the polymer was transferred into the nanocrystals causing light emission with a photon energy corresponding to the nanocrystals' bandgap. Undesirable polymer-nanocrystal phase segregation and presence of defective nanocrystals was responsible for the relatively low emission efficiency from the hybrid devices.

  15. Dielectric response of II-VI semiconductor core-shell ensembles: Study of the lossless optical condition

    NASA Astrophysics Data System (ADS)

    de la Cruz, R. M.; Kanyinda-Malu, C.

    2014-09-01

    We theoretically investigate optical properties of II-VI core-shell distribution mixtures made of two type-I sized-nanoshells as a plausible negative dielectric function material. The nonlocal optical response of the semiconductor QD is described by using a resonant excitonic dielectric function, while the shell response is modeled with Demangeot formula. Achieving the zero-loss at an optical frequency ω, i.e., ɛeff =ɛeff‧ + iɛeff″ with ɛeff‧ < 0 and ɛeff″ = 0, is of fundamental importance in nanophotonics. Resonant states in semiconductors provide a source for negative dielectric function provided that the dipole strength and the oscillator density are adequate to offset the background. Furthermore, the semiconductor offers the prospect of pumping, either optically or electrically, to achieve a gain mechanism that can offset the loss. We analyse optimal conditions that must be satisfied to achieve semiconductor-based negative index materials. By comparing with II-VI semiconductor quantum dots (QDs) previously reported in the literature, the inclusion of phonon and shell contributions in the ɛeff along with the finite barrier Effective Mass Approximation (EMA) approach, we found similar qualitative behaviours for the ɛeff. The lossless optical condition along with ɛeff‧ < 0 is discussed in terms of sizes, volume fractions and embedding medium of the mixtures' distributions. Furthermore, we estimated optical power to maintain nanocrystals density in excited states and this value is less than that previously obtained in II-VI semiconductor QDs.

  16. Investigation of II-VI Semiconductor Quantum Dots for Sensitized Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Horoz, Sabit

    Semiconductor nanocrystals, also referred to as quantum dots (QDs) which have advantages of low-cost, photostability, high molar extinction coefficients and size-dependent optical properties, have been the focus of great scientific and technological efforts in solar cells development. Due to the multi-electron generation effect, the theoretical maximum efficiency of quantum dots sensitized solar cells (QDSSCs) is much higher than that of dye sensitized solar cells (DSSCs). Thus QDSSCs have a clear potential to overtake the efficiency of other kinds of solar cells. Doped semiconductor QDs can not only retain nearly all advantages of intrinsic QDs, but also have additional absorption bands for improved efficiency. This approach is particularly important for wide band gap semiconductors, for example, zinc based QDs. Zinc based are desirable candidates as they are inexpensive, earth abundant and nontoxic. When doped, they can cover a broad range of visible spectrum. In my project, I aim at developing novel methods for the preparation of II-VI QDs and investigating the effects of doping on the properties and performances of QDSSCs. Cadmium selenide (CdSe), manganese doped cadmium selenide (Mn:CdSe), and manganese doped zinc sulfide (Mn:ZnS) QDs have been synthesized by laser ablation in water. The structural and luminescent properties of the QDs have been investigated. In addition, QDSSC performances of the samples have been measured using nanowire electrode made of ZnO and Zn2SnO 4. I have also successfully synthesized europium doped zinc sulfide (Eu:ZnS) and manganese doped cadmium sulfide (Mn:CdS) nanoparticles by wet chemical method, and analyzed structural, optical, and magnetic properties as well as the device performance of the nanoparticles.

  17. Electronic structure of and quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach

    NASA Astrophysics Data System (ADS)

    Viswanatha, Ranjani; Sapra, Sameer; Saha-Dasgupta, Tanusri; Sarma, D. D.

    2005-07-01

    We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that the cation sp3 - anion sp3d5 basis along with the next nearest neighbor model for hopping interactions is sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital, employed previously. Similar analyses were also performed for the II-VI semiconductors, using the more accurate FP-LAPW method compared to previous approaches, in order to enhance reliability of the parameter values. Using these parameters, we calculate the electronic structure of III-V and II-VI nanocrystals in real space with sizes ranging up to about 7nm in diameter, establishing a quantitatively accurate description of the bandgap variation with sizes for the various nanocrystals by comparing with available experimental results from the literature.

  18. Large ordered arrays of single photon sources based on II-VI semiconductor colloidal quantum dot.

    PubMed

    Zhang, Qiang; Dang, Cuong; Urabe, Hayato; Wang, Jing; Sun, Shouheng; Nurmikko, Arto

    2008-11-24

    In this paper, we developed a novel and efficient method of deterministically organizing colloidal particles on structured surfaces over macroscopic areas. Our approach utilizes integrated solution-based processes of dielectric encapsulation and electrostatic-force-mediated self-assembly, which allow precisely controlled placement of sub-10nm sized particles at single particle resolution. As a specific demonstration, motivated by application to single photon sources, highly ordered 2D arrays of single II-VI semiconductor colloidal quantum dots (QDs) were created by this method. Individually, the QDs display triggered single photon emission at room temperature with characteristic photon antibunching statistics, suggesting a pathway to scalable quantum optical radiative systems.

  19. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  20. Chemical composition of matrix-embedded ternary II-VI nanocrystals derived from first- and second-order Raman spectra

    NASA Astrophysics Data System (ADS)

    Azhniuk, Yu. M.; Hutych, Yu. I.; Lopushansky, V. V.; Prymak, M. V.; Gomonnai, A. V.; Zahn, D. R. T.

    2016-12-01

    A one- and multiphonon Raman scattering study is performed for an extensive set of CdS1-xSex, Cd1-yZnyS, Cd1-yZnySe, and CdSe1-xTex nanocrystals to investigate the applicability of first- and second-order Raman spectra for the determination of the matrix-embedded ternary nanocrystal composition. For one-mode ternary systems both the LO and 2LO phonon frequencies in the Raman spectra are shown to be a good measure of the nanocrystal composition. For two-mode systems, the approaches based on the difference of the LO phonon frequencies (first-order Raman spectra) or double LO overtone and combination tone frequencies (second-order Raman spectra) as well as on the LO phonon band intensity ratios are analysed. The weak electron-phonon coupling in the II-VI nanocrystals and the polaron constant values for the nanocrystal sublattices are discussed.

  1. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  2. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  3. Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

    SciTech Connect

    Szabo, L.F.; Biter, W.J.

    1988-04-05

    A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

  4. Realistic tight-binding model for the electronic structure of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Sapra, Sameer; Shanthi, N.; Sarma, D. D.

    2002-11-01

    We analyze the electronic structure of group II-VI semiconductors obtained within linearized muffin-tin-orbital approach in order to arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that a nearest-neighbor sp3 d5 model is fairly sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital. The obtained hopping parameters obey the universal scaling law proposed by Harrison, ensuring transferability to other systems. Furthermore, we show that certain subtle features in the bonding of these compounds require the inclusion of anion-anion interactions in addition to the nearest-neighbor cation-anion interactions.

  5. Characterization of convection related defects in II-VI compound semiconductors

    NASA Technical Reports Server (NTRS)

    Witt, August F.

    1993-01-01

    The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

  6. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    DOEpatents

    McCandless, Brian E.

    2001-06-26

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  7. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    NASA Astrophysics Data System (ADS)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  8. Epitaxial growth and characterization of II-VI-semiconductor, one-dimensional nanostructures and thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Zuoming

    In this thesis, I present the results of three material science studies on II-VI semiconductor nanostructures and thin films: (1) epitaxial growth and characterization of one-dimensional ZnO nanostructures, (2) crystal structure and self-assembly of ultrathin ZnO nanorods, and (3) investigations of surface chemistry for atomic layer epitaxy of ZnS thin film on silicon with chemical precursors. First, in Chapter 3, I present a comparative study of metal-surface-catalyzed growth of ZnO nanowires using four different metal catalysts and using substrates of differing materials and crystal orientation. Multiple material diagnostics were employed to compare the material, structural, and optical properties of the nanowires grown using these different surface systems. My study showed that the growth modes of nanowires are dependent on the choice of surface catalysts. Further, the study revealed that these differences in growth modes are also closely related to the differences in materials properties of these wires including the degree of nanowire alignment on substrates, and the atomic composition ratio of Zn/O, as well as the relative intensity of the oxygen vacancy-related emission in photoluminescence spectra. Second, in Chapter 4, I investigated the growth and self-assembly of ultrathin ZnO nanorods using a combination of small-angle and wide-angle synchrotron X-ray diffraction (SAXRD and WAXRD), and TEM. SAXRD and TEM were used to investigate nanorod self-assembly and the influence of surfactant/precursor ratio on self-assembly; WAXRD were used to study the effects of growth chemistry and physical parameters on the nanorod size and lattice constants. These measurements revealed that these rods self-assemble into periodic superstructures and that the surfactant ligands are important in controlling self-assembly. WAXRD results suggest that surface-dependent changes, such as the binding of surface ligands or other adsorbed species may dominate the changes in nanorod

  9. Magnetization studies of II-VI semiconductor columnar quantum dots with type-II band alignment

    NASA Astrophysics Data System (ADS)

    Eginligil, M.; Sellers, I. R.; McCombe, B. D.; Chou, W.-C.; Kuskovsky, I. L.

    2009-03-01

    We report SQUID magnetization measurements of MBE-grown type-II, II-VI semiconductor quantum dot (QD) samples, with and without Mn incorporation. In all samples, the easy axis is out-of-plane, possibly due to columnar QD formation that arises from strain interaction between adjacent thin dot-containing layers. In addition, both types of QDs display a non-zero spontaneous magnetic ordering at 300 K. One set of samples consists of five-layers of (Zn,Mn)Te/ZnSe with a nominal (Zn,Mn)Te thickness of 3 nm, and ZnSe spacer thickness of 5 nm and 20 nm. These magnetic QD samples show magnetization vs. temperature behavior that can be interpreted in terms of two independent FM phases characterized by transition temperatures TC1 < TC2. A sample containing no Mn consists of 130 ZnTe/ZnSe layers, which forms Zn(Se,Te) QD layers separated by ZnSe spacers. Evidence of ferromagnetism is also seen in this structure, but the spontaneous magnetization is much weaker. For this sample only one phase is seen with TC above 300 K. Results will be discussed in terms of magneto-polaronic effects and defect-level induced ferromagnetism.

  10. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  11. X-ray absorption and diffraction study of II VI dilute oxide semiconductor alloy epilayers

    NASA Astrophysics Data System (ADS)

    Boscherini, F.; Malvestuto, M.; Ciatto, G.; D'Acapito, F.; Bisognin, G.; DeSalvador, D.; Berti, M.; Felici, M.; Polimeni, A.; Nabetani, Y.

    2007-11-01

    Dilute oxide semiconductor alloys obtained by adding oxygen to a II-VI binary compound are of potential applicative interest for blue-light emitters in which the oxygen content could be used to tune the band gap. Moreover, their properties can be usefully compared to the more thoroughly studied dilute nitrides in order to gain insight into the common mechanisms which give rise to their highly non-linear physical properties. Recently, it has been possible to deposit ZnSeO and ZnSeOS epilayers on GaAs(001), which exhibit a red-shift of the band gap and giant optical bowing. In order to provide a structural basis for an understanding of their physical properties, we have performed a study of a set of ZnSeO and ZnSeOS epilayers on GaAs by high resolution x-ray diffraction and x-ray absorption fine structure. We have found that the strain goes from compressive to tensile with increasing O and S concentration and that, while all epilayers are never found to be pseudomorphic, the ternary ones exhibit a low relaxed fraction if compared to the ZnSe/GaAs sample. O K-edge x-ray absorption near edge spectra and corresponding simulations within the full multiple-scattering regime show that O is substitutionally incorporated in the host lattice. Zn and Se K-edge extended x-ray absorption fine structure detect the formation of Zn-O and Zn-S bonds; the analysis of these spectra within multiple-scattering theory has allowed us to measure the local structural parameters. The value of Zn-Se bond length is found to be in agreement with estimates based on models of local distortions in strained and relaxed epilayers; an increase of the mean-square relative displacement is detected at high O and S concentration and is related to both intrinsic and extrinsic factors.

  12. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  13. Two Photon Absorption in II-VI Semiconductors: The Influence of Dimensionality and Size.

    PubMed

    Scott, Riccardo; Achtstein, Alexander W; Prudnikau, Anatol; Antanovich, Artsiom; Christodoulou, Sotirios; Moreels, Iwan; Artemyev, Mikhail; Woggon, Ulrike

    2015-08-12

    We report a comprehensive study on the two-photon absorption cross sections of colloidal CdSe nanoplatelets, -rods, and -dots of different sizes by the means of z-scan and two-photon excitation spectroscopy. Platelets combine large particle volumes with ultra strong confinement. In contrast to weakly confined nanocrystals, the TPA cross sections of CdSe nanoplatelets scale superlinearly with volume (V(∼2)) and show ten times more efficient two-photon absorption than nanorods or dots. This unexpectedly strong shape dependence goes well beyond the effect of local fields. The larger the particles' aspect ratio, the greater is the confinement related electronic contribution to the increased two-photon absorption. Both electronic confinement and local field effects favor the platelets and make them unique two-photon absorbers with outstanding cross sections of up to 10(7) GM, the largest ever reported for (colloidal) semiconductor nanocrystals and ideally suited for two-photon imaging and nonlinear optoelectronics. The obtained results are confirmed by two independent techniques as well as a new self-referencing method.

  14. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  15. Elastico-mechanoluminescence and crystal-structure relationships in persistent luminescent materials and II-VI semiconductor phosphors

    NASA Astrophysics Data System (ADS)

    Chandra, B. P.; Chandra, V. K.; Jha, Piyush

    2015-04-01

    Elastico-mechanoluminescence (EML) has recently attracted the attention of a large number of researchers because of its potential in different types of mechano-optical devices. For understanding the mechanism of EML the relationships between elastico-mechanoluminescence (EML) and crystal-structure of a large number of persistent luminescent materials and II-VI semiconductor phosphors known to date are investigated. It is found that, although most of the non-centrosymmetric crystals exhibit EML, certain non-centrosymmetric crystals do not show EML. Whereas, many centrosymmetric crystals do not exhibit EML, certain centrosymmetric crystals exhibit EML. Piezoelectric ZnS:Cu,Cl single crystals do not show EML, but piezoelectric ZnS:Cu,Cl microcrystalline phosphors show very intense EML. Piezoelectric single crystals of undoped ZnS do not show EML. It seems that EML is related to local piezoelectrification near the impurities in crystals where piezoelectric constant is high. Suitable piezoelectric field near the local piezoelectric region and stable charge carriers in traps are required for appearance of EML. The EML of persistent luminescent materials and II-VI semiconductor phosphors can be understood on the basis of piezoelectrically-induced trap-depth reduction model of EML. Using suitable dopants both in non-centrosymmetric and centrosymmetric crystals intense elastico-mechanoluminescent materials emitting desired colours can be tailored, which may find applications in several mechano-optical devices.

  16. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  17. Preparation and characterization of II-VI compound semiconductor thin-films

    NASA Astrophysics Data System (ADS)

    Boyer, Leah (Ge Shao)

    In this thesis the pulsed-laser deposition (PLD) method for growing thin-films was discussed and applied to form II-VI compound ZnTe thin-films. The transmission and reflection of these films were measured by different methods and theoretically fitted. The characterization of the selected thin-films was analyzed using x-ray diffraction, scanning electron microscopy (SEM). In order to complete the characterization the photocurrent of ZnTe thin-film on Si substrate was measured. The optical nonlinearity of ZnTe thin-film was theoretically proposed and experimentally measured.

  18. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    PubMed Central

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  19. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  20. Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Chan, P.-Y.; Gogna, M.; Suarez, E.; Karmakar, S.; Al-Amoody, F.; Miller, B. I.; Jain, F. C.

    2011-08-01

    This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal-oxide-semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high- κ II-VI tunnel insulator stack and self-assembled GeO x -cladded Ge quantum dots as the charge storage units. A Si3N4 layer was used as the control gate insulator. Capacitance-voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.

  1. Semiconductor nanocrystal-based phagokinetic tracking

    SciTech Connect

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  2. Chemical trend of exchange coupling in II-VI diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Chanier, Thomas; Hayn, Roland; Virot, François

    2010-03-01

    We present an ab-initio study of the magnetic couplings in Mn- and Co-doped II-VI DMS ZnA (A=O,S,Se,Te). We show the necessity of taking into account the strong electron correlation on the transition metal (TM) 3d level to reproduce correctly the experimental chemical trend. Within the LSDA+U (local spin density approximation with a Hubbard-type correction to TM 3d electrons), we find (i) the d-d exchange couplings between nearest-neighbor magnetic ions to be antiferromagnetic (AFM) of the order of -1 meV and (ii) the sp-d exchange constants between magnetic ions and conduction (valence) band electrons (holes) Nα (Nβ) to be FM (AFM) of the order of 0.1 eV (-1 eV). In ZnMnO and ZnCoO, the strong p-d hybridisation leads to the presence of a bound state above the valence band, the failure of the commonly-used Larson perturbation theory formulae for p-d and d-d exchange interactions [1] and prevents high-Tc ferromagnetism [2]. [1] B. Larson et al. , PRB 37, 4137 (1988) [2] T. Chanier et al. , PRB 79, 205204 (2009)

  3. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chishti, Sabiq; Ghosh, Bahniman; Bishnoi, Bhupesh

    2015-02-01

    We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms considered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature (4-500 K) at a fixed diameter of 10 nm and also by varying the diameter (8-12 nm) at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D'yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length (SRL) on the diameter and temperature has been analyzed.

  4. Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Luo, Jun-Wei; Wei, Su-Huai

    2015-02-01

    Using the first-principles density functional theory method, we systematically investigate the structural and electronic properties of heterovalent interfaces of the lattice-matched II-VI/III-V semiconductors, i.e., ZnTe/GaSb, ZnSe/GaAs, ZnS/GaP, and ZnO/GaN. We find that, independent of the orientations, the heterovalent superlattices with period n =6 are energetically more favorable to form nonpolar interfaces. For the [001] interface, the stable nonpolar interfaces are formed by mixing 50% group-III with 50% group-II atoms or by mixing 50% group-V with 50% group-VI atoms; for the [111] nonpolar interfaces, the mixings are 25% group-III (II) and 75% group-II (III) atoms or 25% group-V (VI) and 75% group-VI (V) atoms. For all the nonpolar interfaces, the [110] interface has the lowest interfacial energy because it has the minimum number of II-V or III-VI "wrong bonds" per unit interfacial area. The interfacial energy increases when the atomic number of the elements decreases, except for the ZnO/GaN system. The band alignments between the II-VI and III-V compounds are drastically different depending on whether they have mixed-cation or mixed-anion interfaces, but the averaged values are nearly independent of the orientations. Similarly, other than ZnO/GaN, the valence-band offsets also increase as the atomic number of the elements decreases. The abnormal trends in interfacial energy and band alignment for ZnO/GaN are primarily attributed to the very short bond lengths in this system. The underlying physics behind these trends are explained.

  5. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  6. Photoinduced electron donor/acceptor processes in colloidal II-VI semiconductor quantum dots and nitroxide free radicals

    NASA Astrophysics Data System (ADS)

    Dutta, Poulami

    Electron transfer (ET) processes are one of the most researched topics for applications ranging from energy conversion to catalysis. An exciting variation is utilizing colloidal semiconductor nanostructures to explore such processes. Semiconductor quantum dots (QDs) are emerging as a novel class of light harvesting, emitting and charge-separation materials for applications such as solar energy conversion. Detailed knowledge of the quantitative dissociation of the photogenerated excitons and the interfacial charge- (electron/hole) transfer is essential for optimization of the overall efficiency of many such applications. Organic free radicals are the attractive counterparts for studying ET to/from QDs because these undergo single-electron transfer steps in reversible fashion. Nitroxides are an exciting class of stable organic free radicals, which have recently been demonstrated to be efficient as redox mediators in dye-sensitized solar cells, making them even more interesting for the aforementioned studies. This dissertation investigates the interaction between nitroxide free radicals TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl), 4-amino-TEMPO (4-amino- 2,2,6,6-tetramethylpiperidine-1-oxyl) and II-VI semiconductor (CdSe and CdTe) QDs. The nature of interaction in these hybrids has been examined through ground-state UV-Vis absorbance, steady state and time-resolved photoluminescence (PL) spectroscopy, transient absorbance, upconversion photoluminescence spectroscopy and electron paramagnetic resonance (EPR). The detailed analysis of the PL quenching indicates that the intrinsic charge transfer is ultrafast however, the overall quenching is still limited by the lower binding capacities and slower diffusion related kinetics. Careful analysis of the time resolved PL decay kinetics reveal that the decay rate constants are distributed and that the trap states are involved in the overall quenching process. The ultrafast hole transfer from CdSe QDs to 4-Amino TEMPO observed

  7. Exchange couplings for Mn ions in CdTe: Validity of spin models for dilute magnetic II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Linneweber, Thorben; Bünemann, Jörg; Löw, Ute; Gebhard, Florian; Anders, Frithjof

    2017-01-01

    We employ density-functional theory (DFT) in the generalized gradient approximation (GGA) and its extensions GGA +U and GGA+Gutzwiller to calculate the magnetic exchange couplings between pairs of Mn ions substituting Cd in a CdTe crystal at very small doping. DFT(GGA) overestimates the exchange couplings by a factor of 3 because it underestimates the charge-transfer gap in Mn-doped II-VI semiconductors. Fixing the nearest-neighbor coupling J1 to its experimental value in GGA +U , in GGA+Gutzwiller, or by a simple scaling of the DFT(GGA) results provides acceptable values for the exchange couplings at second-, third-, and fourth-neighbor distances in Cd(Mn)Te, Zn(Mn)Te, Zn(Mn)Se, and Zn(Mn)S. In particular, we recover the experimentally observed relation J4>J2,J3 . The filling of the Mn 3 d shell is not integer, which puts the underlying Heisenberg description into question. However, using a few-ion toy model the picture of a slightly extended local moment emerges so that an integer 3 d -shell filling is not a prerequisite for equidistant magnetization plateaus, as seen in experiment.

  8. Thermophysical analysis of II-VI semiconductors by PPE calorimetry and lock-in thermography

    SciTech Connect

    Streza, M.; Dadarlat, D.; Strzałkowski, K.

    2013-11-13

    An accurate determination of thermophysical properties such as thermal diffusivity, thermal effusivity and thermal conductivity is extremely important for characterization and quality assurance of semiconductors. Thermal diffusivity and effusivity of some binary semiconductors have been investigated. Two experimental techniques were used: a contact technique (PPE calorimetry) and a non contact technique (lock-in thermography). When working with PPE, in the back (BPPE) configuration and in the thermally thick regim of the pyroelectric sensor, we can get the thermal diffusivity of the sample by performing a scanning of the excitation frequency of radiation. Thermal effusivity is obtained in front configuration (sensor directly irradiated and sample in back position) by performing a thickness scan of a coupling fluid. By using the lock-in thermography technique, the thermal diffusivity of the sample is obtained from the phase image. The results obtained by the two techniques are in good agreement. Nevertheless, for the determination of thermal diffusivity, lock-in thermography is preferred.

  9. Persistent Photoconductivity in II-VI Mixed Semiconductors Related Critical Phenomena and Applications

    DTIC Science & Technology

    1991-03-31

    dS or CdSe . The linewidth broadening is predominantly caused by compositional fluctuations. Because the linewidth of the exciton transition is caused...yZnMnyTe grown by the Bridgman method The variation Semiconductor Alloys., A Dissanayake, G. Brown, J Y of the frequency of the zone-center optical phonons...carriers in persistent photoconductivity (PPC) mode in CdSe 0 5S0 5 and Zn0 3Cdo 7Se I1-VI semiconduc- observe three distinct LO phonons in CdI_

  10. Semiconductor Nanocrystal Photonics

    DTIC Science & Technology

    2005-08-31

    D. Krauss, C. B. Poitras, and M. Lipson, " Energy transfer between colloidal semiconductor quantum dots in an optical microcavity," (submitted, 2006...Phys. Lett. 82, 4032 (2003). J. J. Peterson and T. D. Krauss, "Fluorescence Spectroscopy of Single Lead Sulfide Quantum Dots ," Nano Lett. (in press...Guo, Xiaowei Teng, Hong Yang, Todd D. Krauss, Carl B. Poitras, and Michal Lipson, "Enhanced Energy Transfer between Colloidal Semiconductor Quantum

  11. II-VI semiconductor quantum dot quantum wells: a tight-binding study

    NASA Astrophysics Data System (ADS)

    Pérez-Conde, J.; Bhattacharjee, A. K.

    2006-05-01

    We have studied the electronic structure, exciton states and optical spectra of spherical semiconductor quantum dot quantum wells (QDQW's) by means of a symmetry-adapted tight-binding (TB) method. We have investigated two classes of QDQW's: CdS/HgS/CdS, based on a CdS core which acts as a barrier, with a thin HgS well layer intercalated between the core and a clad layer of CdS. The second class of QDQW's is based on ZnS cores covered with CdS layers which act in this case as a well. The calculated values of the absorption onset show a good agreement with the experimental data. Large photoluminescence Stokes shifts are also predicted.

  12. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

    NASA Astrophysics Data System (ADS)

    Wełna, M.; Kudrawiec, R.; Nabetani, Y.; Tanaka, T.; Jaquez, M.; Dubon, O. D.; Yu, K. M.; Walukiewicz, W.

    2015-08-01

    The effect of a semiconductor matrix on the band anticrossing interaction is studied for four different dilute-oxide material systems: ZnSO, ZnSeO, ZnTeO, and ZnCdTeO. The choice of host material allows for independent control of the energy separation between the conduction band edge and the O energy level as well as the coupling parameter. The transition energies measured by photoreflectance and optical absorption are well explained by the band anticrossing model with the coupling parameter increasing from 1.35 eV for ZnSO to 2.8 eV for ZnTeO and showing approximately linear dependence on the electronegativity difference between O and the host anion.

  13. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

    PubMed Central

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-01-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

  14. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors.

    PubMed

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-06-28

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 10(7) A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38-65 μA) and response speed (40-60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.

  15. High Resolution Triple Axis X-Ray Diffraction Analysis of II-VI Semiconductor Crystals

    NASA Technical Reports Server (NTRS)

    Volz, H. M.; Matyi, R. J.

    1999-01-01

    The objective of this research program is to develop methods of structural analysis based on high resolution triple axis X-ray diffractometry (HRTXD) and to carry out detailed studies of defect distributions in crystals grown in both microgravity and ground-based environments. HRTXD represents a modification of the widely used double axis X-ray rocking curve method for the characterization of grown-in defects in nearly perfect crystals. In a double axis rocking curve experiment, the sample is illuminated by a monochromatic X-ray beam and the diffracted intensity is recorded by a fixed, wide-open detector. The intensity diffracted by the sample is then monitored as the sample is rotated through the Bragg reflection condition. The breadth of the peak, which is often reported as the full angular width at half the maximum intensity (FWHM), is used as an indicator of the amount of defects in the sample. This work has shown that high resolution triple axis X-ray diffraction is an effective tool for characterizing the defect structure in semiconductor crystals, particularly at high defect densities. Additionally, the technique is complimentary to X-ray topography for defect characterization in crystals.

  16. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  17. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  18. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  19. Quantum theory of electroabsorption in semiconductor nanocrystals.

    PubMed

    Tepliakov, Nikita V; Leonov, Mikhail Yu; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D

    2016-01-25

    We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of noninteracting electrons and holes in an infinitely deep quantum well and describes all the major features of electroabsorption, including the Stark effect, the Franz-Keldysh effect, and the field-induced spectral broadening. It is applicable to nanocrystals of different shapes and dimensions (quantum dots, nanorods, and nanoplatelets), and will prove useful in modeling and design of electrooptical devices based on ensembles of semiconductor nanocrystals.

  20. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. First technical progress report, 15 April 1980-30 June 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-07-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Factors limiting the short circuit current of the n-CdSe/methanol/ferro-ferricyanide system to 17.5 mA/cm/sup 2/ have been identified. The principal limiting factor is apparently specific adsorption of hexacyanoferrate species on the electrode surface which occurs at higher redox couple concentrations and slows the overall charge transfer process. Ion pairing also occurs, resulting in a low mass transport rate (smaller diffusion coefficients and increased solution viscosity), and probably enhances the degree of specific adsorption. Improvements in the performance of this system will require mitigation of the interactions between the redox species and the electrode surface, e.g., via electrolytes with reduced ion-pairing tendencies or the use of electrode surface films. Photoelectrochemically generated polypyrrole films have been shown to protect CdX photoanodes from dissolution while permitting electron exchange with the electrolyte. Current effort is directed toward improving the film adhesion and optimizing the performance characteristics.

  1. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  2. Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Su, C.-H.; Szofran, F. R.; Scripa, R. N.; Cobb, S. D.; Lehoczky, S. L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

  3. Developing New Nanoprobes from Semiconductor Nanocrystals

    SciTech Connect

    Fu, Aihua

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  4. Composition-tunable alloyed semiconductor nanocrystals.

    PubMed

    Regulacio, Michelle D; Han, Ming-Yong

    2010-05-18

    The ability to engineer the band gap energy of semiconductor nanocrystals has led to the development of nanomaterials with many new exciting properties and applications. Band gap engineering has thus proven to be an effective tool in the design of new nanocrystal-based semiconductor devices. As reported in numerous publications over the last three decades, tuning the size of nanocrystalline semiconductors is one way of adjusting the band gap energy. On the other hand, research on band gap engineering via control of nanocrystal composition, which is achieved by adjusting the constituent stoichiometries of alloyed semiconductors, is still in its infancy. In this Account, we summarize recent research on colloidal alloyed semiconductor nanocrystals that exhibit novel composition-tunable properties. Alloying of two semiconductors at the nanometer scale produces materials that display properties distinct not only from the properties of their bulk counterparts but also from those of their parent semiconductors. As a result, alloyed nanocrystals possess additional properties that are composition-dependent aside from the properties that emerge due to quantum confinement effects. For example, although the size-dependent emission wavelength of the widely studied CdSe nanocrystals can be continuously tuned to cover almost the entire visible spectrum, the near-infrared (NIR) region is far outside its spectral range. By contrast, certain alloy compositions of nanocrystalline CdSe(x)Te(1-x), an alloy of CdSe and CdTe, can efficiently emit light in the NIR spectral window. These NIR-emitting nanocrystals are potentially useful in several biomedical applications. In addition, highly stable nanocrystals formed by alloying CdSe with ZnSe (i.e., Zn(x)Cd(1-x)Se) emit blue light with excellent efficiency, a property seldom achieved by the parent binary systems. As a result, these materials can be used in short-wavelength optoelectronic devices. In the future, we foresee new discoveries

  5. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    NASA Astrophysics Data System (ADS)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  6. Lanthanide sensitization in II-VI semiconductor materials: a case study with terbium(III) and europium(III) in zinc sulfide nanoparticles.

    PubMed

    Mukherjee, Prasun; Shade, Chad M; Yingling, Adrienne M; Lamont, Daniel N; Waldeck, David H; Petoud, Stéphane

    2011-04-28

    This work explores the sensitization of luminescent lanthanide Tb(3+) and Eu(3+) cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected while monitoring the lanthanide emission bands reveal that the ZnS nanoparticles act as an antenna for the sensitization of Tb(3+) and Eu(3+). The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semiempirical model, proposed by Dorenbos and co-workers (Dorenbos, P. J. Phys.: Condens. Matter 2003, 15, 8417-8434; J. Lumin. 2004, 108, 301-305; J. Lumin. 2005, 111, 89-104. Dorenbos, P.; van der Kolk, E. Appl. Phys. Lett. 2006, 89, 061122-1-061122-3; Opt. Mater. 2008, 30, 1052-1057. Dorenbos, P. J. Alloys Compd. 2009, 488, 568-573; references 1-6.) to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb(3+) and Eu(3+) in ZnS nanoparticles are different; namely, Tb(3+) acts as a hole trap, whereas Eu(3+) acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II-VI semiconductor materials; namely, CdSe, CdS, and ZnSe.

  7. Developing new nanoprobes from semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Fu, Aihua

    In recent years, semiconductor nanocrystal quantum dots have garnered the spotlight as an important new class of biological labeling tool. With optical properties superior to conventional organic fluorophores from many aspects, such as high photostability and multiplexing capability, quantum dots have been applied in a variety of advanced imaging applications. This dissertation research goes along with large amount of research efforts in this field, while focusing on the design and development of new nanoprobes from semiconductor nanocrystals that are aimed for useful imaging or sensing applications not possible with quantum dots alone. Specifically speaking, two strategies have been applied. In one, we have taken advantage of the increasing capability of manipulating the shape of semiconductor nanocrystals by developing semiconductor quantum rods as fluorescent biological labels. In the other, we have assembled quantum dots and gold nanocrystals into discrete nanostructures using DNA. The background information and synthesis, surface manipulation, property characterization and applications of these new nanoprobes in a few biological experiments are detailed in the dissertation.

  8. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  9. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  10. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  11. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  12. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  13. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  14. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  15. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  16. Exciton polarizability in semiconductor nanocrystals.

    PubMed

    Wang, Feng; Shan, Jie; Islam, Mohammad A; Herman, Irving P; Bonn, Mischa; Heinz, Tony F

    2006-11-01

    The response of charge to externally applied electric fields is an important basic property of any material system, as well as one critical for many applications. Here, we examine the behaviour and dynamics of charges fully confined on the nanometre length scale. This is accomplished using CdSe nanocrystals of controlled radius (1-2.5 nm) as prototype quantum systems. Individual electron-hole pairs are created at room temperature within these structures by photoexcitation and are probed by terahertz (THz) electromagnetic pulses. The electronic response is found to be instantaneous even for THz frequencies, in contrast to the behaviour reported in related measurements for larger nanocrystals and nanocrystal assemblies. The measured polarizability of an electron-hole pair (exciton) amounts to approximately 10(4) A(3) and scales approximately as the fourth power of the nanocrystal radius. This size dependence and the instantaneous response reflect the presence of well-separated electronic energy levels induced in the system by strong quantum-confinement effects.

  17. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    PubMed

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  18. Pressure Induced Phase Transition (B3-B1) and Elastic Properties of II-Vi ZnSe Semiconductors

    NASA Astrophysics Data System (ADS)

    Varshney, Dinesh

    2012-07-01

    We evolve an effective interionic interaction potential (EIoIP) to investigate the pressure induced phase transitions from Zinc blende (B3) to Rocksalt (B1) structure in ZnSe semiconductor. The developed potential consists of the long-range Coulomb and three-body interactions (TBI) and the Hafemeister and Flygare type short-range (SR) overlap repulsion extended upto the second neighbor ions and the van der Waals (vdW) interaction. The three-body interactions arise from the electron-shell deformation when the nearest-neighbor ions overlap and has been employed for detailed studies of pressure-induced phase-transition behavior of ZnSe semiconductors. Our calculated value of the phase transition pressure (Pt) is higher and the magnitude of the discontinuity in volume at the transition pressure is consistent with reported data. The variation of second-order elastic constants with pressure resembles that observed in some binary semiconductors. It is inferred that the vdW interaction is effective in obtaining the Debye temperature, Gruneisen parameter, thermal expansion coefficient and compressibility. It is argued that the model with TBI (model II) has yielded somewhat more realistic predictions of the phase-transition and high-pressure behavior as compared to usual two-body potentials (model I) based on phenomenological approach.

  19. The structure and morphology of semiconductor nanocrystals

    SciTech Connect

    Kadavanich, Andreas V.

    1997-11-01

    Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group).

  20. Synthesis and Characterization of Mixed III-V and II-VI Semiconductor Monomers Included in the Borate Sodalite Analogue

    DTIC Science & Technology

    1993-04-30

    Characterization of Mixed III-V and .I-VI N00014-k0-J-er59Semiconductor Monomrers Included in the Borate Sodalite Analogue ..... C LL AU N.𔃾 K.L. Moran...dependent static and magic angle spinning and solid state NMR experiments. Inclusion of GaP within the borate sodalite analogue results in the formation of an...properties of compounds can be dramatically altered by inclusion into the sodalite framework, which is one of several reasons why this zeolite structure

  1. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity.

  2. Nanocrystal doped matrixes

    DOEpatents

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  3. Synthesis and applications of heterostructured semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Khon, Elena

    Semiconductor nanocrystals (NCs) have been of great interest to researchers for several decades due to their unique optoelectronic properties. These nanoparticles are widely used for a variety of different applications. However, there are many unresolved issues that lower the efficiency and/or stability of devices which incorporate these NCs. Our research is dedicated to addressing these issues by identifying potential problems and resolving them, improving existing systems, generating new synthetic strategies, and/or building new devices. The general strategies for the synthesis of different nanocrystals were established in this work, one of which is the colloidal growth of gold domains onto CdS semiconductor nanocrystals. Control of shape and size was achieved simply by adjusting the temperature and the time of the reaction. Depending on the exact morphology of Au and CdS domains, fabricated nano-composites can undergo evaporation-induced self-assembly onto a substrate, which is very useful for building devices. CdS/Au heterostructures can assemble in two different ways: through end-to-end coupling of Au domains, resulting in the formation of one-dimensional chains; and via side-by-side packing of CdS nanorods, leading to the onset of two-dimensional superlattices. We investigated the nature of exciton-plasmon interactions in Au-tipped CdS nanorods using femtosecond transient absorption spectroscopy. The study demonstrated that the key optoelectronic properties of electrically coupled metal and semiconductor domains are significantly different from those observed in systems with weak inter-domain coupling. In particular, strongly-coupled nanocomposites promote mixing of electronic states at semiconductor-metal domain interfaces, which causes a significant suppression of both plasmon and exciton carrier excitations. Colloidal QDs are starting to replace organic molecules in many different applications, such as organic light emmiting diods (OLEDs), due to their

  4. Multiexciton fluorescence from semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Fisher, Brent; Caruge, Jean-Michel; Chan, Yin-Thai; Halpert, Jonathan; Bawendi, Moungi G.

    2005-11-01

    We use transient photoluminescence to spectrally resolve the emission from 1, 2, and 3 electron-hole pairs states in CdSe colloidal nanocrystals with radii ranging between 2.3 and 5.2 nm. Temporally and spectrally resolved multiexciton emission from single NCs is also observed. The observation of multiexciton emission enables new experiments and potential applications at both the single NC level and using ensembles of NCs. First we discuss the use of single CdSe(CdZnS) core(shell) colloidal NCs (spheres and rods) to generate triggered photon pair emission at room temperature, with specific ordering of the pair's constituent photons. Second, we incorporate CdSe/ZnS core-shell nanocrystals into a TiO 2 host matrix and observe simultaneous two-state amplified spontaneous emission and lasing from both multiexcitonic transitions (1S 3/2-1S e and 1P 3/2-1P e) in a surface-emitting distributed feedback CdSe NC laser. From our data we deduce radiative lifetimes, quantum yields, stimulated emission gain, and power dependencies for the multiexciton transitions.

  5. Electronic structure of defects in III-VI and II-VI semiconductors and novel ytterbium-based intermetallics

    NASA Astrophysics Data System (ADS)

    Rak, Zsolt

    In recent years there has been a revival of interest in the III-VI family of semiconductors (GaS, GaSe, GaTe and InSe) due to their exciting nonlinear optical properties and their possible application in detector devices. These materials crystallize in layered crystal structure and their physical properties display a quasi two-dimensional character. An important characteristic of these systems is the existence of Ga-Ga (or In-In) dimers. It is well known that defects control the physical properties of semiconductors. In this thesis, we have carried out electronic structure calculations to study the nature of defect states in these materials. The defects we have studied include substitutional impurities at the cation and the anion sites as well as cationic and anionic vacancies. The failure of the hydrogenic effective mass approximation (EMA) to reproduce the experimental binding energies for the substitutional Cd and Sn defect states in GaSe, indicates the presence of large central cell corrections and the necessity of incorporating short range interactions in the calculation of defect binding energy. This has been done using a supercell model and self-consistent ab initio electronic structure method within density functional theory (DFT), which is known to be quite successful in tackling the problem of defects in semiconductors. Analyzing the defects from first-principles, we have been able to explain the detailed microscopic mechanism of the formation of Ga-site defects in GaSe and GaTe. When Ga is replaced by an impurity or when it is removed from the system to create a vacancy, the Ga dimer states can be strongly perturbed and this perturbation can give rise to defect states in the band gap. Defect formation energy calculations, based on total energy differences between the pure and defect containing systems, can give valuable insight into the solubility of different impurities in a host compound. The formation energies of Ge and Sn impurities reveal that under

  6. Femtosecond studies of photoinduced electron dynamics in colloidal quantum-confined II-VI semiconductor nanoparticles: CdS, CdSe and CdZnS

    NASA Astrophysics Data System (ADS)

    Roberti, Trevor

    A variety of synthetic and spectroscopic techniques have been applied to elucidate photoinduced charge carrier processes in II-VI semiconductor quantum dots. These semiconductor nanoparticles exhibit both size-dependent optical tuning due to the quantum-confinement effect and power-dependent absorption, bleach and emission characteristics. Although the tunable-absorption has been well characterized, the subsequent trapping and recombination processes are still under much investigation and are the subject of this dissertation. Particles with vastly differing surfaces, sizes, energetics and solvents have been characterized using various spectroscopic techniques in unison. The primary technique was transient femtosecond near-IR absorption, which was used to characterize charge carrier processes on the subpicosecond and picosecond time scales. UV-visible spectroscopy was used to characterize the size of the particles. Static fluorescence measurements were used to characterize the surface of the particles and the relative amount of radiative recombination. Nanosecond fluorescence measurements were also used to assist in the assignment of the fast, power-dependent near-IR absorption decay. The research reported here makes two fundamental contributions to the photophysics of semiconductor nanoparticles. First, the power-dependent, few picosecond decay process has primarily been assigned to electron-hole recombination via exciton-exciton annihilation. As the power increases, higher order, Auger processes may also arise. The exciton-exciton annihilation mechanism was primarily deduced based on power-dependent fluorescence measurements which exhibited the formation of short-lived exciton fluorescence at high powers. Secondly, many nanoparticle properties and environments were varied in order to better understand the observed picosecond processes and the effect of variations on these processes. The systems studied ranged from aqueous acidic and basic quantum dots of differing

  7. Photocatalytic Solar Fuel Generation on Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Feldmann, Jochen

    2015-03-01

    I will review our scientific work on photocatalytic solar fuel generation utilizing colloidal semiconductor nanocrystals decorated with catalytic metal clusters. In particular, nanocrystals made of CdS, TiO2 and organo-metal halide perovskites will be discussed. Key issues are the role of hole scavangers (M. Berr et al., Appl. Phys. Lett. 100, 223903 (2012)), the size and density of catalytic clusters (M. Berr et al.: Appl. Phys. Lett. 97, 093108 (2010) and Nano Letters 12, 5903 (2012) , and dependencies on external parameters such as pH (T. Simon et al., Nature Mat. 13, 1013 (2014)). Financially supported by the Bavarian Research Cluster ``Solar Technologies Go Hybrid: SolTech''.

  8. Scaling of multiexciton lifetimes in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Klimov, V. I.; McGuire, J. A.; Schaller, R. D.; Rupasov, V. I.

    2008-05-01

    Ultrafast multiexciton decay via Auger recombination is a major impediment for prospective applications of semiconductor nanocrystals (NCs) in lasing and solar cells enabled by carrier multiplication. One important unexplored aspect of Auger recombination is the scaling of multiexciton lifetimes with the number of excitons per NC. To address this question, we analyze multiexciton dynamics in PbSe and CdSe NCs. We observe that these two systems show a distinct difference in scaling of multiexciton lifetimes, which can be explained in terms of a difference in symmetries of high-order multiexcitons resulting from significant disparity in degeneracies of the lowest-energy quantized states.

  9. Enantioselective cellular uptake of chiral semiconductor nanocrystals.

    PubMed

    Martynenko, I V; Kuznetsova, V A; Litvinov, I K; Orlova, A O; Maslov, V G; Fedorov, A V; Dubavik, A; Purcell-Milton, F; Gun'ko, Yu K; Baranov, A V

    2016-02-19

    The influence of the chirality of semiconductor nanocrystals, CdSe/ZnS quantum dots (QDs) capped with L- and D-cysteine, on the efficiency of their uptake by living Ehrlich Ascite carcinoma cells is studied by spectral- and time-resolved fluorescence microspectroscopy. We report an evident enantioselective process where cellular uptake of the L-Cys QDs is almost twice as effective as that of the D-Cys QDs. This finding paves the way for the creation of novel approaches to control the biological properties and behavior of nanomaterials in living cells.

  10. Semiconductor nanocrystals for novel optical applications

    NASA Astrophysics Data System (ADS)

    Moon, Jong-Sik

    Inspired by the promise of enhanced spectral response, photorefractive polymeric composites photosensitized with semiconductor nanocrystals have emerged as an important class of materials. Here, we report on the photosensitization of photorefractive polymeric composites at visible wavelengths through the inclusion of narrow band-gap semiconductor nanocrystals composed of PbS. Through this approach, internal diffraction efficiencies in excess of 82%, two-beam-coupling gain coefficients in excess of 211 cm-1, and response times 34 ms have been observed, representing some of the best figures-of-merit reported on this class of materials. In addition to providing efficient photosensitization, however, extensive studies of these hybrid composites have indicated that the inclusion of nanocrystals also provides an enhancement in the charge-carrier mobility and subsequent reduction in the photorefractive response time. Through this approach with PbS as charge-carrier, unprecedented response times of 399 micros were observed, opening the door for video and other high-speed applications. It is further demonstrated that this improvement in response time occurs with little sacrifice in photorefractive efficiency and with internal diffraction efficiencies of 72% and two- beam-coupling gain coefficients of 500 cm-1 being measured. A thorough analysis of the experimental data is presented, supporting the hypothesized mechanism of the enhanced charge mobility without the accompaniment of superfluous traps. Finally, water soluble InP/ZnS and CdSe/ZnS quantum dots interacted with CPP and Herceptin to apply them as a bio-maker. Both of quantum dots showed the excellent potential for use in biomedical imaging and drug delivery applications. It is anticipated that these approaches can play a significant role in the eventual commercialization of these classes of materials.

  11. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  12. Spectroscopy of intraband optical transitions in anisotropic semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baimuratov, Anvar S.; Rukhlenko, Ivan D.; Baranov, Alexander V.; Fedorov, Anatoly V.

    2013-09-01

    We propose a new type of optical spectroscopy of anisotropic semiconductor nanocrystals, which is based on the welldeveloped stationary pump-probe technique, where the pump and probe fields are absorbed upon, respectively, interband and intraband transitions of the nanocrystals' electronic subsystem. We develop a general theory of intraband absorption based on the density matrix formalism. This theory can be applied to study degenerate eigenstates of electrons in semiconductor nanocrystals of different shapes and dimentions. We demonstrate that the angular dependence of intraband absorption by nonspherical nanocrystals enables investigating their shape and orientation, as well as the symmetry of quantum states excited by the probe field and selection rules of electronic transitions.

  13. Luminescent Colloidal Semiconductor Nanocrystals Containing Copper: Synthesis, Photophysics, and Applications.

    PubMed

    Knowles, Kathryn E; Hartstein, Kimberly H; Kilburn, Troy B; Marchioro, Arianna; Nelson, Heidi D; Whitham, Patrick J; Gamelin, Daniel R

    2016-09-28

    Copper-doped semiconductors are classic phosphor materials that have been used in a variety of applications for many decades. Colloidal copper-doped semiconductor nanocrystals have recently attracted a great deal of interest because they combine the solution processability and spectral tunability of colloidal nanocrystals with the unique photoluminescence properties of copper-doped semiconductor phosphors. Although ternary and quaternary semiconductors containing copper, such as CuInS2 and Cu2ZnSnS4, have been studied primarily in the context of their photovoltaic applications, when synthesized as colloidal nanocrystals, these materials have photoluminescence properties that are remarkably similar to those of copper-doped semiconductor nanocrystals. This review focuses on the luminescent properties of colloidal copper-doped, copper-based, and related copper-containing semiconductor nanocrystals. Fundamental investigations into the luminescence of copper-containing colloidal nanocrystals are reviewed in the context of the well-established luminescence mechanisms of bulk copper-doped semiconductors and copper(I) molecular coordination complexes. The use of colloidal copper-containing nanocrystals in applications that take advantage of their luminescent properties, such as bioimaging, solid-state lighting, and luminescent solar concentrators, is also discussed.

  14. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  15. Doped semiconductor nanocrystal based fluorescent cellular imaging probes.

    PubMed

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, S K; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R

    2013-06-21

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.

  16. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2008-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  17. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-20

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  18. Nonlinear optical properties of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Ricard, Gianpiero Banfi Vittorio Degiorgio Daniel

    1998-05-01

    This review is devoted to the description of recent experimental results concerning the nonlinear optical properties of semiconductor-doped glasses SDGs with particular emphasis on the regime in which the energy of the incident photon is smaller than the energy gap. A considerable theoretical and experimental effort has been devoted in the last 10years to the fundamental aspects of quantumconfined structures, which have properties somewhat intermediate between the bulk crystals and atoms or molecules. From this point of view, SDGs represent an easily available test system, and optical techniques have been a major diagnostic tool. Luminescence and absorption spectroscopy were extensively used to characterize the electronic states. The experiments aimed at the measurement of the real and imaginary parts of the third-order optical susceptibility of SDGs below the bandgap are described in some detail, and the results obtained with different techniques are compared. Besides the intrinsic fast nonlinearity due to bound electrons, SDGs may present a larger but much slower nonlinearity due to the free carriers generated by two-photon absorption. This implies that experiments have to be properly designed for separation of the two effects. In this article we stress the importance of a detailed structural characterization of the samples. Knowledge of the volume fraction occupied by the nanocrystals is necessary in order to derive from the experimental data the intrinsic nonlinearity and to compare it with the bulk nonlinearity. We discuss recent experiments in which the dependence of the intrinsic nonlinearity on the crystal size is derived by performing, on the samples, measurements of the real part and imaginary part of the nonlinear optical susceptibility and measurements of crystal size and volume fraction. Structural characterization is of interest also for a better understanding of the physical processes underlying the growth of crystallites in SDGs. The average size of

  19. Radiative decay rates of impurity states in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-01

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  20. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  1. Charge-tunable quantum plasmons in colloidal semiconductor nanocrystals.

    PubMed

    Schimpf, Alina M; Thakkar, Niket; Gunthardt, Carolyn E; Masiello, David J; Gamelin, Daniel R

    2014-01-28

    Nanomaterials exhibiting plasmonic optical responses are impacting sensing, information processing, catalysis, solar, and photonics technologies. Recent advances have expanded the portfolio of plasmonic nanostructures into doped semiconductor nanocrystals, which allow dynamic manipulation of carrier densities. Once interpreted as intraband single-electron transitions, the infrared absorption of doped semiconductor nanocrystals is now commonly attributed to localized surface plasmon resonances and analyzed using the classical Drude model to determine carrier densities. Here, we show that the experimental plasmon resonance energies of photodoped ZnO nanocrystals with controlled sizes and carrier densities diverge from classical Drude model predictions at small sizes, revealing quantum plasmons in these nanocrystals. A Lorentz oscillator model more adequately describes the data and illustrates a closer link between plasmon resonances and single-electron transitions in semiconductors than in metals, highlighting a fundamental contrast between these two classes of plasmonic materials.

  2. Synthesis of Doped Semiconductor Nanocrystals and Conductive Coatings

    NASA Astrophysics Data System (ADS)

    Wills, Andrew Wilke

    Semiconductor nanocrystals are an intriguing class of materials because of their size-tunable properties. This makes them promising for future optoelectronic devices such as solar cells and light emitting diodes. Realization of these devices, however, requires precise control of the flow of electricity through the particles. In bulk semiconductors, this is achieved by using materials with few unintentional defects, then intentionally adding particular defects or dopants to alter the semiconductor's electronic properties. In contrast, the addition of electrically active dopants has scarcely been demonstrated in semiconductor nanocrystals, and charge transport is hindered by the barrier of electron hopping between particles. The goal of this thesis, therefore, is to discover new methods to control charge transport in nanocrystals. It divides into three major thrusts: 1) the investigation of the doping process in semiconductor nanocrystals, 2) the invention of new synthetic methods to incorporate electrically active dopants into semiconductor nanocrystals, and 3) the invention of a new nanocrystal surface coating that aids processing of nanocrystals into devices but can be removed to enhance charge transport between particles. The first objective is achieved by the comparison of four different precursors that have been used to dope Mn into nanocrystals. Experiments show that dimethylmanganese incorporates efficiently into ZnSe nanocrystals while other precursors are less efficient and sometimes lower the quality of the nanocrystals produced. The second goal is met by the application of a core-shell synthetic strategy to the incorporation of non-isovalent impurities (Al and In) into CdSe nanocrystals. By separating the three steps of nucleation, dopant binding, and growth, each step can be optimized so that doping is achieved and high quality particles are produced. Detailed characterization shows dopant incorporation and local environment, while transistor

  3. Plasma-produced nanocrystals enable new insights in semiconductor physics

    NASA Astrophysics Data System (ADS)

    Greenberg, Benjamin; Robinson, Zachary; Gorynski, Claudia; Voigt, Bryan; Francis, Lorraine; Aydil, Eray; Kortshagen, Uwe

    2016-09-01

    The transition from semiconducting (insulating) to metallic behavior is a central problem of semiconductor physics. In bulk semiconductors, this insulator-to-metal transition is described by the well-known Mott criterion. However, in films of semiconductor nanocrystals the Mott criterion fails completely. Recent progress in the nonthermal plasma synthesis of films of highly doped silicon nanocrystals has contributed to the development of a new theory that presents a consistent analog to the Mott criterion for nanocrystal materials. Here, we study films of nonthermal plasma produced zinc oxide (ZnO) nanocrystals to in detail investigate the insulator-to-metal transition. We produce high-purity monodisperse ZnO nanocrystals in a nonthermal plasma and form dense films via supersonic impact deposition. We then modulate the free carrier density, n, and nanocrystal contact facet radius, ρ, via xenon-flashlamp intense pulsed light annealing, which induces necking between the clean surfaces of adjacent nanocrystals. Preliminary electrical measurements indicate that the electron mobility can be finely tuned and that the films cross the insulator-to-metal transition for sufficiently high n and ρ. This work was supported by the MRSEC program of the U.S. National Science Foundation under grant DMR-1420013.

  4. Single-particle spectroscopy of I-III-VI semiconductor nanocrystals: spectral diffusion and suppression of blinking by two-color excitation

    NASA Astrophysics Data System (ADS)

    Sharma, Dharmendar Kumar; Hirata, Shuzo; Bujak, Lukasz; Biju, Vasudevanpillai; Kameyama, Tatsuya; Kishi, Marino; Torimoto, Tsukasa; Vacha, Martin

    2016-07-01

    Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due to temporal activation and deactivation of one such state. Filling of a trap state with a lower-energy laser enables optical modulation of photoluminescence intermittency (blinking) and leads to an almost two-fold increase in brightness.Ternary I-III-VI semiconductor nanocrystals have been explored as non-toxic alternatives to II-VI semiconductors for optoelectronic and sensing applications, but large photoluminescence spectral width and moderate brightness restrict their practical use. Here, using single-particle photoluminescence spectroscopy on nanocrystals of (AgIn)xZn2(1-x)S2 we show that the photoluminescence band is inhomogeneously broadened and that size distribution is the dominant factor in the broadening. The residual homogeneous linewidth of individual nanocrystals reaches up to 75% of the ensemble spectral width. Single nanocrystals undergo spectral diffusion which also contributes to the inhomogeneous band. Excitation with two lasers with energies above and below the bandgap reveals coexistence of two emitting donor states within one particle. Spectral diffusion in such particles is due

  5. Metal-insulator transition in films of doped semiconductor nanocrystals.

    PubMed

    Chen, Ting; Reich, K V; Kramer, Nicolaas J; Fu, Han; Kortshagen, Uwe R; Shklovskii, B I

    2016-03-01

    To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

  6. Optical activity of semiconductor nanocrystals with ionic impurities

    NASA Astrophysics Data System (ADS)

    Tepliakov, N. V.; Baimuratov, A. S.; Gun'ko, Yu. K.; Baranov, A. V.; Fedorov, A. V.; Rukhlenko, I. D.

    2017-01-01

    The strength of the enantioselective interaction of chiral semiconductor nanocrystals with circularly polarized light can be varied over a wide range, which finds a series of important applications in modern nanophotonics. As a rule, this interaction is relatively weak, because the dimension of nanocrystals is much smaller than the wavelength of the optical radiation, and the optical activity of nanocrystals is rather low. In this work, we show theoretically that, by applying ion doping, one can significantly enhance the optical activity of nanocrystals and to vary its magnitude over a wide range of values and over a wide range of frequencies. We show that, by precisely arranging impurities inside nanocrystals, one can optimize the rotatory strengths of intraband transitions, making them 100 times stronger than typical rotatory strengths of small chiral molecules.

  7. Ab initio Theory of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Lin-Wang

    2007-03-01

    With blooming experimental synthesis of various nanostructures out of many semiconductor materials, there is an urgent need to calculate the electronic structures and optical properties of these nanosystems based on reliable ab initio methods. Unfortunately, due to the O(N^3) scaling of the conventional ab initio calculation methods based on the density functional theory (DFT), and the >1000 atom sizes of the most experimental nanosystems, the direct applications of these conventional ab intio methods are often difficult. Here we will present the calculated results using our O(N) scaling charge patching method (CPM) [1,2] to nanosystems up to 10,000 atoms. The CPM yields the charge density of a nanosystem by patching the charge motifs generated from small prototype systems. The CPM electron/hole eigen energies differ from the directly calculated results by only ˜10-20 meV. We will present the optical band gaps of quantum dots and wires, quantum rods, quantum dot/quantum well, and quantum dots doped with impurities. Besides good agreements with experimental measurements, we will demonstrate why it is important to perform ab initio calculations, in contrast with the continuum model k.p calculations. We will show the effects of surface polarization potentials and the internal electric fields. Finally, a linear scaling 3 dimensional fragment (LS3DF) method will be discussed. The LS3DF method can be used to calculate the total energy and atomic forces of a large nanosystem, with the results practically the same as the direct DFT method. Our work demonstrates that, with the help of supercomputers, it is now feasible to calculate the electronic structures and optical properties of >10,000 atom nanocrystals with ab initio accuracy. [1] L.W. Wang, Phys. Rev. Lett. 88, 256402 (2002). [2] J. Li, L.W. Wang, Phys. Rev. B 72, 125325 (2005).

  8. Diorganyl dichalcogenides as useful synthons for colloidal semiconductor nanocrystals.

    PubMed

    Brutchey, Richard L

    2015-11-17

    The ability to synthesize colloidal semiconductor nanocrystals in a well-controlled manner (i.e., with fine control over size, shape, size dispersion, and composition) has been mastered over the past 15 years. Much of this success stems from careful studies of precursor conversion and nanocrystal growth with respect to phosphine chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals. Despite the high level of success that has been achieved with phosphine chalcogenides, there has been a longstanding interest in exploring alternate chalcogenide precursors because of issues associated with phosphine chalcogenide cost, purity, toxicity, etc. This has resulted in a large body of literature on the use of sulfur and selenium dissolved in octadecene or amines, thio- and selenoureas, and silyl chalcogenides as alternate chalcogenide precursors for metal chalcogenide nanocrystal synthesis. In this Account, emerging work on the use of diorganyl dichalcogenides (R-E-E-R, where E = S, Se, or Te and R = alkyl, allyl, benzyl, or aryl) as alternate chalcogenide precursors for the synthesis of metal chalcogenide nanocrystals is summarized. Among the benefits of these dichalcogenide synthons are the following: (i) they represent the first and only common precursor type that can function as chalcogen transfer reagents for each of the group VI elements (i.e., to make metal oxide, metal sulfide, metal selenide, and metal telluride nanocrystals); (ii) they possess relatively weak E-E bonds that can be readily cleaved under mild thermolytic or photolytic conditions; and (iii) the organic substituents can be tuned to affect the reactivity. These combined attributes have allowed dichalcogenide precursors to be employed for a wide range of metal chalcogenide nanocrystal syntheses, including those for In2S3, SnxGe1-xSe, SnTe, Cu2-xSySe1-y, ZnSe, CdS, CdSe, MoSe2, WSe2, BiSe, and CuFeS2. Interestingly, a number of metastable phases of compositionally complex

  9. Photoluminescence from semiconductor cadmium selenide nanocrystals

    NASA Astrophysics Data System (ADS)

    Nazzal, Amjad Yousef

    In this dissertation, the photoluminescence (PL) emission properties from different CdSe nanocrystals (NCs) dispersed in polymer thin films were investigated. The PL spectroscopy was used as a probing tool to study core and surface-related emission properties of the CdSe NCs under investigation. The results found in these studies are promising from the point of view of fundamental understanding as well as the possible employments of the emission properties of CdSe NCs in certain technological applications. The studies presented in this dissertation include the following: (i) PL polarization spectroscopy of single CdSe NCs was performed on a system of colloidal CdSe quantum rods (QRs). Our experimental measurements suggest a strong polarization dependence of both excitation and emission, and confirm the unique linear dipole in the QRs along the long axis of the rod, i.e. the c axis of wurtzite structure, which is in agreement with the previous theoretical predictions. These results are very important because it represents an experimental test to the available theoretical models used in exploring the rich electronic spectra of these NC systems. These results also show the importance of the shape anisotropy on the electronic spectrum of NCs. (ii) Environmental effects on the PL from highly luminescent bare-core CdSe and core/shell CdSe/ZnS NCs were systematically investigated under different atmospheric environments and photo-irradiation conditions. In this study, the PL was used as a probe to detect changes in the electronic spectrum of the NCs due to photo-induced interactions on the surface of the NCs with the local surrounding atmosphere. Such studies are very important to provide a good understanding of the optimum operational conditions for emission applications of NCs in solid-state devices and also give a simple way of studying the surface of the NCs indirectly by investigating the surface interactions with different molecular systems and their effects on the

  10. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2011-12-06

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  11. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2012-10-16

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  12. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2002-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  13. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2011-12-20

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  14. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  15. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2004-03-02

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  16. Methods of use of semiconductor nanocrystal probes for treating a material

    DOEpatents

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2007-04-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  17. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  18. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul A.

    2016-12-27

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  19. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    SciTech Connect

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2014-01-28

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  20. Track membranes with embedded semiconductor nanocrystals: structural and optical examinations

    NASA Astrophysics Data System (ADS)

    Orlova, A. O.; Gromova, Yu A.; Savelyeva, A. V.; Maslov, V. G.; Artemyev, M. V.; Prudnikau, A.; Fedorov, A. V.; Baranov, A. V.

    2011-11-01

    We studied the optical properties of poly(ethylene terephthalate) ion track membranes of 1.5, 0.5 and 0.05 µm pores impregnated with luminescent semiconductor CdSe/ZnS nanocrystals of different diameters (2.5 and 5 nm). The nanocrystals were embedded from their colloidal solutions in toluene by the immersion of a membrane in a colloidal solution. Localization of quasi-isolated weakly interacting CdSe/ZnS nanocrystals in a loosened layer on the track pore wall surface along with the existence of empty pores was demonstrated. We observed also the spatial separation of nanocrystals of 2.5 and 5 nm in size along the 50 nm pores.

  1. Coupling of Surface Plasmons and Semiconductor Nanocrystals for Nanophotonics Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Sriharsha V.

    The goal of this thesis is to engineer the interaction between surface plasmons and semiconductor nanocrystals for nanophotonic applications. Plasmonic metals support surface plasmon polaritons, hybrid photon and electron waves that propagate along a metal-dielectric interface. Unlike photons, surface plasmons can be confined in sub-diffraction geometries. This has two important consequences: 1) optical devices can be designed at the nanoscale, and 2) the high density of electromagnetic fields allows study of enhanced light-matter interactions. Surface plasmons have been exploited to demonstrate components of optoelectronic circuits, optical antennas, surface enhanced spectroscopy, enhanced fluorescence from fluorophores, and nanolasers. Despite the advances, surface plasmon losses limit their propagation lengths to tens of micrometers in the visible wavelengths, hindering many applications. Recently, the template-stripping approach was shown to fabricate metal films that exhibit larger grains and smoother surface, reducing the grain boundary and roughness scattering. To further improve the plasmonic properties, we investigate the importance of deposition conditions in the template-stripping approach. We provide insight and recipes to enhance the plasmonic performance of the most commonly used metals in the ultraviolet, visible, and near-infrared. We also explore the potential of low temperatures to improve the performance of metal films, where the electron-electron and electron-phonon scattering should be reduced. This sets a limit on the minimum loss metals can exhibit. Using this knowledge, we study the optical properties of quantum-confined semiconductor nanocrystals near metal structures. Semiconductor nanocrystals have many attractive characteristics that make them suitable for solid-state lighting and solar cells among others. Specifically, CdSe nanocrystals have been heavily studied for their large absorption and emission cross-sections, size dependent

  2. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    NASA Astrophysics Data System (ADS)

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  3. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    SciTech Connect

    Sachleben, Joseph Robert

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10-8 s-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring 14N-1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T1 and T2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  4. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  5. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  6. Modeling photoinduced fluorescence enhancement in semiconductor nanocrystal arrays

    NASA Astrophysics Data System (ADS)

    Maenosono, Shinya

    2003-07-01

    Photoinduced fluorescence enhancement (PFE) in semiconductor nanocrystal (NC) arrays is modeled based on the rate equations for ground-state, excited-state and photoionized NCs in the array. The photoionization process is broken down into fast and slow ionization processes, which are expected to relate to blinking and darkening phenomena, respectively. Consequently, PFE behavior is found to change drastically, as it depends on both the intrinsic properties of NCs, and on external conditions, such as surface-capping molecules and atmosphere.

  7. Galvanic displacement of metals on semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Johnson, Melanie; Kelly, Joel A.; Henderson, Eric J.; Veinot, Jonathan G. C.

    2009-11-01

    We report the galvanic displacement (GD) of germanium from germanium nanocrystals (Ge-NCs) with silver. The Ge-NCs are synthesized by reductive thermal processing of germanium suboxide sol-gel prepolymers. Thermal processing yields size-controlled oxide-embedded Ge-NCs, which are liberated by dissolution of the germanium oxide matrix in water. Subsequent exposure of the freestanding Ge-NCs to aqueous solutions of AgNO3 leads to deposition of silver nanostructures by GD. The resulting metal structures were analyzed by XRD, XPS, TEM and EDX, confirming deposition of elemental silver in a variety of shapes and sizes.

  8. Controlled assembly and electronics in semiconductor nanocrystal-based devices

    NASA Astrophysics Data System (ADS)

    Drndic, Marija

    2006-03-01

    I will discuss the assembly of semiconductor nanocrystals (CdSe and PbSe) into electronic devices and the basic mechanisms of charge transport in nanocrystal arrays [1-4]. Spherical CdSe nanocrystals show robust memory effects that can be exploited for memory applications [1]. Nanocrystal memory can be erased electrically or optically and is rewritable. In PbSe nanocrystal arrays, as the interdot coupling is increased, the system evolves from an insulating regime dominated by Coulomb blockade to a semiconducting regime, where hopping conduction is the dominant transport mechanism [2]. Two-dimensional CdSe nanorod arrays show striking and anomalous transport properties, including strong and reproducible non-linearities and current oscillations with dc-voltage [4]. I will also discuss imaging of the charge transport in nanocrystal-based electronic devices. Nanocrystal arrays were investigated using electrostatic force microscopy (EFM) and transmission electron microscopy (TEM) [3]. Changes in lattice and transport properties upon annealing in vacuum were revealed. Local charge transport was directly imaged by EFM and correlated to nanopatterns observed with TEM. This work shows how charge transport in complex nanocrystal networks can be identified with nm resolution [3]. This work was supported by the ONR grant N000140410489, the NSF grants DMR-0449553 and MRSEC DMR00-79909, and the ACS PRF grant 41256-G10. References:1) Fischbein M. D. and Drndic M., ``CdSe nanocrystal quantum-dot memory,'' Applied Physics Letters, 86 (19), 193106, 2005.2) H. E. Romero and Drndic M., ``Coulomb blockade and hopping conduction in PbSe quantum dots,'' Physical Review Letters 95, 156801, 2005.3) Hu Z., Fischbein M. D. and Drndic M., ``Local charge transport in two-dimensional PbSe nanocrystal arrays studied by electrostatic force microscopy",'' Nano Letters 5 (7), 1463, 2005.4) Romero H.E., Calusine G. and Drndic M., ``Current oscillations, switching and hysteresis in CdSe nanorod

  9. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  10. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  11. Two-Photon-Pumped Perovskite Semiconductor Nanocrystal Lasers.

    PubMed

    Xu, Yanqing; Chen, Qi; Zhang, Chunfeng; Wang, Rui; Wu, Hua; Zhang, Xiaoyu; Xing, Guichuan; Yu, William W; Wang, Xiaoyong; Zhang, Yu; Xiao, Min

    2016-03-23

    Two-photon-pumped lasers have been regarded as a promising strategy to achieve frequency up-conversion for situations where the condition of phase matching required by conventional approaches cannot be fulfilled. However, their practical applications have been hindered by the lack of materials holding both efficient two-photon absorption and ease of achieving population inversion. Here, we show that this challenge can be tackled by employing colloidal nanocrystals of perovskite semiconductors. We observe highly efficient two-photon absorption (with a cross section of 2.7 × 10(6) GM) in toluene solutions of CsPbBr3 nanocrystals that can excite large optical gain (>500 cm(-1)) in thin films. We have succeeded in demonstrating stable two-photon-pumped lasing at a remarkable low threshold by coupling CsPbBr3 nanocrystals with microtubule resonators. Our findings suggest perovskite nanocrystals can be used as excellent gain medium for high-performance frequency-up-conversion lasers toward practical applications.

  12. Synthesis and manipulation of semiconductor nanocrystals in microfluidic reactors

    NASA Astrophysics Data System (ADS)

    Chan, Emory Ming-Yue

    Microfluidic reactors are investigated as a mechanism to control the growth of semiconductor nanocrystals and characterize the structural evolution of colloidal quantum dots. Due to their short diffusion lengths, low thermal masses, and predictable fluid dynamics, microfluidic devices can be used to quickly and reproducibly alter reaction conditions such as concentration, temperature, and reaction time, while allowing for rapid reagent mixing and product characterization. These features are particularly useful for colloidal nanocrystal reactions, which scale poorly and are difficult to control and characterize in bulk fluids. To demonstrate the capabilities of nanoparticle microreactors, a size series of spherical CdSe nanocrystals was synthesized at high temperature in a continuous-flow, microfabricated glass reactor. Nanocrystal diameters are reproducibly controlled by systematically altering reaction parameters such as the temperature, concentration, and reaction time. Microreactors with finer control over temperature and reagent mixing were designed to synthesize nanoparticles of different shapes, such as rods, tetrapods, and hollow shells. The two major challenges observed with continuous flow reactors are the deposition of particles on channel walls and the broad distribution of residence times that result from laminar flow. To alleviate these problems, I designed and fabricated liquid-liquid segmented flow microreactors in which the reaction precursors are encapsulated in flowing droplets suspended in an immiscible carrier fluid. The synthesis of CdSe nanocrystals in such microreactors exhibited reduced deposition and residence time distributions while enabling the rapid screening a series of samples isolated in nL droplets. Microfluidic reactors were also designed to modify the composition of existing nanocrystals and characterize the kinetics of such reactions. The millisecond kinetics of the CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured

  13. Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    1999-01-01

    A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

  14. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations

    SciTech Connect

    Sadtler, Bryce F

    2009-05-01

    Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or

  15. Controlling Carrier Dynamics using Quantum-Confined Semiconductor Nanocrystals

    SciTech Connect

    Beard, Matthew C.; Klimov, Victor I.

    2016-06-01

    The articles included in this special issue of Chemical Physics explore the use of quantum-confined semiconductor nanocrystals to control the flow of energy and/or charge. Colloidal quantum-confined semiconductor nanostructures are an emerging class of functional materials being developed for novel opto-electronic applications. In the last few years numerous examples in the literature have emerged where novel nanostructures have been tailored such as to achieve a specific function thus moving the field from the stage of discovery of novel behaviors to that of control of nanostructure properties. In addition to the internal structure of the NCs their assemblies can be tailored to achieve emergent properties and add additional control parameters that determine the final opto-electronic properties. These principles are explored via variations in shape, size, surface ligands, heterostructuring, morphology, composition, and assemblies and are demonstrated through measurements of excited state processes, such as Auger recombination; photoluminescence; charge separation and charge transport.

  16. Engineered semiconductor nanocrystals with enhanced carrier multiplication yields

    NASA Astrophysics Data System (ADS)

    Klimov, Victor

    2014-03-01

    Carrier multiplication (CM) is a process whereby absorption of a single photon results in multiple electron-hole pairs (excitons). This process could benefit a number of solar-energy conversion technologies, most notably photocatalysis and photovoltaics. This presentation overviews recent progress in understanding the CM process in semiconductor nanocrystals, motivated by an outstanding challenge in this field - the lack of capability to predict the CM performance of nanocrystals based on their known photophysical properties or documented parameters of parental bulk solids. Here, we present a possible solution to this problem by showing that, using biexciton Auger lifetimes and intraband relaxation rates inferred from ultrafast spectroscopic studies, we can rationalize relative changes in CM yields as a function of nanocrystal composition, size and shape. Further, guided by this model, we demonstrate a two-fold enhancement in multiexciton yields in PbSe nanorods vs. quantum dots attributed to enhanced Coulomb interactions. We also explore the control of competing intra-band cooling for increasing multiexciton production. Specifically, we design a new type of hetero-structured PbSe/CdSe quantum dots with reduced rates of intra-band relaxation and demonstrate a four-fold boost in the multiexciton yield. These studies provide useful guidelines for future efforts to achieve the ultimate, energy-conservation-defined CM efficiencies.

  17. II-VI widegap superlattices

    NASA Astrophysics Data System (ADS)

    Taguchi, T.; Yamada, Y.; Endoh, Y.; Nozue, Y.; Mullins, J. T.; Ohno, T.; Masumoto, Y.; Takeda, S.

    We review our recent results of the excitonic properties in ZnSeZnS and Cd xZn 1-xSZnS strained-layer superlattices (SLSs). The most important physical insights in the II-VI widegap superlattices are to understand the relationship between the optical properties of quasi-two-dimensional exciton and strain because the well layer frequently receives biaxial compression or tension. The strain thus causes the significant shifts of the bandgap and splitting of the valence band. Semi-quantative calculations lead to an expectation that ZnSeZnS SLS always exhibits a type I band lineup within 100 Å thicknesses of the ZnSe well at a constant ZnS barrier width of several tens angstrom. This is in good agreement with the experimental results of exciton absorption and its luminescence excitation spectra. The Cd 0.3Zn 0.7SZnS SLSs with a range of well widths can produce intense excitonic emissions around 3.4 eV at room temperature due to the quantum confinement of excitons in the ternary CdZnS well. In order to elucidate localisation and relaxation processes of excitons, we have for the first time reported a multiple-LO-phonon emission process in the excitation spectra. The electric-field studies suggest that the concomitant decrease in intensity and the energy downshift of the exciton line may originate from the quantum confined Stark effect.

  18. Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors

    SciTech Connect

    Chan, Emory Ming-Yue

    2006-01-01

    Microfluidic reactors are investigated as a mechanism tocontrol the growth of semiconductor nanocrystals and characterize thestructural evolution of colloidal quantum dots. Due to their shortdiffusion lengths, low thermal masses, and predictable fluid dynamics,microfluidic devices can be used to quickly and reproducibly alterreaction conditions such as concentration, temperature, and reactiontime, while allowing for rapid reagent mixing and productcharacterization. These features are particularly useful for colloidalnanocrystal reactions, which scale poorly and are difficult to controland characterize in bulk fluids. To demonstrate the capabilities ofnanoparticle microreactors, a size series of spherical CdSe nanocrystalswas synthesized at high temperature in a continuous-flow, microfabricatedglass reactor. Nanocrystal diameters are reproducibly controlled bysystematically altering reaction parameters such as the temperature,concentration, and reaction time. Microreactors with finer control overtemperature and reagent mixing were designed to synthesize nanoparticlesof different shapes, such as rods, tetrapods, and hollow shells. The twomajor challenges observed with continuous flow reactors are thedeposition of particles on channel walls and the broad distribution ofresidence times that result from laminar flow. To alleviate theseproblems, I designed and fabricated liquid-liquid segmented flowmicroreactors in which the reaction precursors are encapsulated inflowing droplets suspended in an immiscible carrier fluid. The synthesisof CdSe nanocrystals in such microreactors exhibited reduced depositionand residence time distributions while enabling the rapid screening aseries of samples isolated in nL droplets. Microfluidic reactors werealso designed to modify the composition of existing nanocrystals andcharacterize the kinetics of such reactions. The millisecond kinetics ofthe CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured insitu with micro

  19. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    NASA Astrophysics Data System (ADS)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  20. X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals

    SciTech Connect

    Hamad, Kimberly Sue

    2000-01-01

    Semiconductor nanocrystals are a system which has been the focus of interest due to their size dependent properties and their possible use in technological applications. Many chemical and physical properties vary systematically with the size of the nanocrystal and thus their study enables the investigation of scaling laws. Due to the increasing surface to volume ratio as size is decreased, the surfaces of nanocrystals are expected to have a large influence on their electronic, thermodynamic, and chemical behavior. In spite of their importance, nanocrystal surfaces are still relatively uncharacterized in terms of their structure, electronic properties, bonding, and reactivity. Investigation of nanocrystal surfaces is currently limited by what techniques to use, and which methods are suitable for nanocrystals is still being determined. This work presents experiments using x-ray and electronic spectroscopies to explore the structure, reactivity, and electronic properties of semiconductor (CdSe, InAs) nanocrystals and how they vary with size. Specifically, x-ray absorption near edge spectroscopy (XANES) in conjunction with multiple scattering simulations affords information about the structural disorder present at the surface of the nanocrystal. X-ray photoelectron spectroscopy (XPS) and ultra-violet photoelectron spectroscopy (UPS) probe the electronic structure in terms of hole screening, and also give information about band lineups when the nanocrystal is placed in electric contact with a substrate. XPS of the core levels of the nanocrystal as a function of photo-oxidation time yields kinetic data on the oxidation reaction occurring at the surface of the nanocrystal.

  1. Sol-gel derived precursors to Group 14 semiconductor nanocrystals - Convenient materials for enabling nanocrystal-based applications

    NASA Astrophysics Data System (ADS)

    Veinot, Jonathan G. C.; Henderson, Eric J.; Hessel, Colin M.

    2009-11-01

    Semiconductor nanocrystals are intriguing because of their electronic, optical, and chemical characteristics. Silicon nanocrystals (Si-NCs) of sub-5 nm dimension are of particular interest due to their intense photoluminescent response and the promise of linking silicon photonics and electronics. Other related nanomaterials of technological importance include SiC and Ge. The following contribution describes key experimental findings pertaining to synthetic methodology, investigation of nanodomain formation and growth, as determined by X-ray powder diffraction (XRD) and photoluminescence (PL) spectroscopy for a series of sol-gel derived prepolymers suitable for preparing Group 14 based nanocrystal containing composites.

  2. Biexciton quantum yield of single semiconductor nanocrystals from photon statistics

    PubMed Central

    Nair, Gautham; Zhao, Jing; Bawendi, Moungi G

    2012-01-01

    Biexciton properties strongly affect the usability of a light emitter in quantum photon sources and lasers but are difficult to measure for single fluorophores at room temperature due to luminescence intermittency and bleaching at the high excitation fluences usually required. Here, we observe the biexciton (BX) to exciton (X) to ground photoluminescence cascade of single colloidal semiconductor nanocrystals (NCs) under weak excitation in a g(2) photon correlation measurement and show that the normalized amplitude of the cascade feature is equal to the ratio of the BX to X fluorescence quantum yields. This imposes a limit on the attainable depth of photon antibunching and provides a robust means to study single emitter biexciton physics. In NC samples, we show that the BX quantum yield is considerably inhomogeneous, consistent with the defect sensitivity expected of the Auger nonradiative recombination mechanism. The method can be extended to study X,BX spectral and polarization correlations. PMID:21288042

  3. A novel approach for the fabrication of all-inorganic nanocrystal solids: Semiconductor matrix encapsulated nanocrystal arrays

    NASA Astrophysics Data System (ADS)

    Moroz, Pavel

    Growing fossil fuels consumption compels researchers to find new alternative pathways to produce energy. Along with new materials for the conversion of different types of energy into electricity innovative methods for efficient processing of energy sources are also introduced. The main criteria for the success of such materials and methods are the low cost and compelling performance. Among different types of materials semiconductor nanocrystals are considered as promising candidates for the role of the efficient and cheap absorbers for solar energy applications. In addition to the anticipated cost reduction, the integration of nanocrystals (NC) into device architectures is inspired by the possibility of tuning the energy of electrical charges in NCs via nanoparticle size. However, the stability of nanocrystals in photovoltaic devices is limited by the stability of organic ligands which passivate the surface of semiconductors to preserve quantum confinement. The present work introduces a new strategy for low-temperature processing of colloidal nanocrystals into all-inorganic films: semiconductor matrix encapsulated nanocrystal arrays (SMENA). This methodology goes beyond the traditional ligand-interlinking scheme and relies on the encapsulation of morphologically-defined nanocrystal arrays into a matrix of a wide-band gap semiconductor, which preserves optoelectronic properties of individual nanoparticles. Fabricated solids exhibit excellent thermal stability, which is attributed to the heteroepitaxial structure of nanocrystal-matrix interfaces. The main characteristics and properties of these solids were investigated and compared with ones of traditionally fabricated nanocrystal films using standard spectroscopic, optoelectronic and electronic techniques. As a proof of concept, we. We also characterized electron transport phenomena in different types of nanocrystal films using all-optical approach. By measuring excited carrier lifetimes in either ligand-linked or

  4. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    PubMed

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  5. Nanocrystals Research for Energy Efficient and Clean Energy Technologies:

    SciTech Connect

    Rosenthal, Sandra J

    2013-12-17

    Efforts centered on: nanocrystal photovoltaic fabrication, ultrafast dynamics and aberration-corrected STEM characterization of II-VI core, core/shell and alloyed nanocrystals, and fundamental investigation and applications of ultrasmall white light-emitting CdSe nanocrystal.

  6. Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots

    SciTech Connect

    Zhu, J.G.; White, C.W.; Withrow, S.P.

    1996-11-01

    Nanocrystals of semiconductor materials have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. Strong red photoluminescence (PL) peaked around 750 nm has been observed in samples containing Si nanocrystals in SiO{sub 2}. The Si nanocrystals in the samples with optimized PL intensities are a few nanometers in diameter. Difference in the absorption bandgap energies and the PL peak energies are discussed. Significant influence of implantation sequence on the formation of compound semiconductor nanocrystals are demonstrated with the GaAs in the SiO{sub 2} system. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage if Ga is implanted first. A single surface phonon mode has been observed in the infrared reflectance measurement from samples containing GaAs nanocrystals.

  7. Gas-phase synthesis of semiconductor nanocrystals and its applications

    NASA Astrophysics Data System (ADS)

    Mandal, Rajib

    Luminescent nanomaterials is a newly emerging field that provides challenges not only to fundamental research but also to innovative technology in several areas such as electronics, photonics, nanotechnology, display, lighting, biomedical engineering and environmental control. These nanomaterials come in various forms, shapes and comprises of semiconductors, metals, oxides, and inorganic and organic polymers. Most importantly, these luminescent nanomaterials can have different properties owing to their size as compared to their bulk counterparts. Here we describe the use of plasmas in synthesis, modification, and deposition of semiconductor nanomaterials for luminescence applications. Nanocrystalline silicon is widely known as an efficient and tunable optical emitter and is attracting great interest for applications in several areas. To date, however, luminescent silicon nanocrystals (NCs) have been used exclusively in traditional rigid devices. For the field to advance towards new and versatile applications for nanocrystal-based devices, there is a need to investigate whether these NCs can be used in flexible and stretchable devices. We show how the optical and structural/morphological properties of plasma-synthesized silicon nanocrystals (Si NCs) change when they are deposited on stretchable substrates made of polydimethylsiloxane (PDMS). Synthesis of these NCs was performed in a nonthermal, low-pressure gas phase plasma reactor. To our knowledge, this is the first demonstration of direct deposition of NCs onto stretchable substrates. Additionally, in order to prevent oxidation and enhance the luminescence properties, a silicon nitride shell was grown around Si NCs. We have demonstrated surface nitridation of Si NCs in a single step process using non?thermal plasma in several schemes including a novel dual-plasma synthesis/shell growth process. These coated NCs exhibit SiNx shells with composition depending on process parameters. While measurements including

  8. Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals

    SciTech Connect

    Vela-Becerra, Javier

    2013-02-01

    Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our group’s recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

  9. Effect of surface modification on semiconductor nanocrystal fluorescence lifetime.

    PubMed

    Ruedas-Rama, Maria J; Orte, Angel; Hall, Elizabeth A H; Alvarez-Pez, Jose M; Talavera, Eva M

    2011-04-04

    Semiconductor nanocrystals, namely, quantum dots (QDs), present a set of unique photoluminescence properties, which has led to increased interest in using them as advantageous alternatives to conventional organic dyes. Many applications of QDs involve surface modification to enhance the solubility or biocompatibility of the QDs. One of the least exploited properties of QDs is the very long photoluminescence lifetime that usually has complex kinetics owing to the effect of quantum confinement. Herein, we describe the effect of different surface modifications on the photoluminescence decay kinetics of QDs. The different surface modifications were carefully chosen to provide lipophilic or water-soluble QDs with either positive or negative surface net charges. We also survey the effect on the QD lifetime of several ligands that interact with the QD surface, such as organic chromophores or fluorescent proteins. The results obtained demonstrate that time-resolved fluorescence is a useful tool for QD-based sensing to set the basis for the development of time-resolved-based nanosensors.

  10. Structure-Dependent Spin Polarization in Polymorphic CdS:Y Semiconductor Nanocrystals.

    PubMed

    Wang, Pan; Xiao, Bingxin; Zhao, Rui; Ma, Yanzhang; Zhang, Mingzhe

    2016-03-01

    Searching for the polymorphic semiconductor nanocrystals would provide precise and insightful structure-spin polarization correlations and meaningful guidance for designing and synthesizing high spin-polarized spintronic materials. Herein, the high spin polarization is achieved in polymorphic CdS:Y semiconductor nanocrystals. The high-pressure polymorph of rock-salt CdS:Y nanocrystals has been recovered at ambient conditions synthesized by the wurtzite CdS:Y nanocrystals as starting material under 5.2 GPa and 300 °C conditions. The rock-salt CdS:Y polymorph displays more robust room-temperature ferromagnetism than wurtzite sample, which can reach the ferromagnetic level of conventional semiconductors doped with magnetic transition-metal ions, mainly due to the significantly enhanced spin configuration and defect states. Therefore, crystal structure directly governs the spin configuration, which determines the degree of spin polarization. This work can provide experimental and theoretical methods for designing the high spin-polarized semiconductor nanocrystals, which is important for applications in semiconductor spintronics.

  11. Nanocrystal structures

    DOEpatents

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2006-12-19

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  12. Effective optical Faraday rotations of semiconductor EuS nanocrystals with paramagnetic transition-metal ions.

    PubMed

    Hasegawa, Yasuchika; Maeda, Masashi; Nakanishi, Takayuki; Doi, Yoshihiro; Hinatsu, Yukio; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji

    2013-02-20

    Novel EuS nanocrystals containing paramagnetic Mn(II), Co(II), or Fe(II) ions have been reported as advanced semiconductor materials with effective optical rotation under a magnetic field, Faraday rotation. EuS nanocrystals with transition-metal ions, EuS:M nanocrystals, were prepared by the reduction of the Eu(III) dithiocarbamate complex tetraphenylphosphonium tetrakis(diethyldithiocarbamate)europium(III) with transition-metal complexes at 300 °C. The EuS:M nanocrystals thus prepared were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), inductively coupled plasma atomic emission spectroanalysis (ICP-AES), and a superconducting quantum interference device (SQUID) magnetometer. Enhanced Faraday rotations of the EuS:M nanocrystals were observed around 550 nm, and their enhanced spin polarization was estimated using electron paramagnetic resonance (EPR) measurements. In this report, the magneto-optical relationship between the Faraday rotation efficiency and spin polarization is discussed.

  13. Photosensitizer methylene blue-semiconductor nanocrystals hybrid system for photodynamic therapy.

    PubMed

    Rakovich, Aliaksandra; Rakovich, Tatsiana; Kelly, Vincent; Lesnyak, Vladimir; Eychmüller, Alexander; Rakovich, Yury P; Donegan, John F

    2010-04-01

    In this work we report on the development of novel hybrid material with enhanced photodynamic properties based on methylene blue and CdTe nanocrystals. Absorption spectroscopy, visible photoluminescence spectroscopy and fluorescence lifetime imaging of this system reveal efficient charge transfer between nanocrystals and the methylene blue dye. Near infra-red photoluminescence measurements provide evidence for an increased efficiency of singlet oxygen production by the methylene blue dye. In vitro studies on the growth of HepG2 and HeLa cancerous cells were also performed, they point towards an improvement in the cell kill efficiency for the methylene blue-semiconductor nanocrystals hybrid system.

  14. New aspects of carrier multiplication in semiconductor nanocrystals.

    PubMed

    McGuire, John A; Joo, Jin; Pietryga, Jeffrey M; Schaller, Richard D; Klimov, Victor I

    2008-12-01

    One consequence of strong spatial confinement of electronic wave functions in semiconductor nanocrystals (NCs) is a significant enhancement in carrier-carrier Coulomb interactions. This effect leads to a number of novel physical phenomena including ultrafast decay of multiple electron-hole pairs (multiexcitons) by Auger recombination and high-efficiency generation of mutiexcitons by single photons via carrier multiplication (CM). Significant recent interest in multiexciton phenomena in NCs has been stimulated by studies of NC lasing, as well as potential applications of CM in solar-energy conversion. The focus of this Account is on CM. In this process, the kinetic energy of a "hot" electron (or a "hot" hole) does not dissipate as heat but is, instead, transferred via the Coulomb interaction to the valence-band electron, exciting it across the energy gap. Because of restrictions imposed by energy and translational-momentum conservation, as well as rapid energy loss due to phonon emission, CM is inefficient in bulk semiconductors, particularly at energies relevant to solar energy conversion. On the other hand, the CM efficiency can potentially be enhanced in zero-dimensional NCs because of factors such as a wide separation between discrete electronic states, which inhibits phonon emission ("phonon bottleneck"), enhanced Coulomb interactions, and relaxation in translational-momentum conservation. Here, we investigate CM in PbSe NCs by applying time-resolved photoluminescence and transient absorption. Both techniques show clear signatures of CM with efficiencies that are in good agreement with each other. NCs of the same energy gap show moderate batch-to-batch variations (within approximately 30%) in apparent multiexciton yields and larger variations (more than a factor of 3) due to differences in sample conditions (stirred vs static solutions). These results indicate that NC surface properties may affect the CM process. They also point toward potential interference

  15. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    PubMed Central

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  16. Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures.

    PubMed

    Xia, Feifei; Shao, Zhibin; He, Yuanyuan; Wang, Rongbin; Wu, Xiaofeng; Jiang, Tianhao; Duhm, Steffen; Zhao, Jianwei; Lee, Shuit-Tong; Jie, Jiansheng

    2016-11-22

    Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO3, WO3, CrO3, and V2O5 as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.

  17. Spectroscopic characterization of iron-doped II-VI compounds for laser applications

    NASA Astrophysics Data System (ADS)

    Martinez, Alan

    The middle Infrared (mid-IR) region of the electromagnetic spectrum between 2 and 15 ?m has many features which are of interest to a variety of fields such as molecular spectroscopy, biomedical applications, industrial process control, oil prospecting, free-space communication and defense-related applications. Because of this, there is a demand for broadly tunable, laser sources operating over this spectral region which can be easily and inexpensively produced. II-VI semiconductor materials doped with transition metals (TM) such as Co 2+, Cr2+, or Fe2+ exhibit highly favorable spectroscopic characteristics for mid-IR laser applications. Among these TM dopants, Fe2+ has absorption and emission which extend the farthest into the longer wavelength portion of the mid-IR. Fe2+:II-VI crystals have been utilized as gain elements in laser systems broadly tunable over the 3-5.5 microm range [1] and as saturable absorbers to Q -switch [2] and mode-lock [3] laser cavities operating over the 2.7-3 microm. TM:II-VI laser gain elements can be fabricated inexpensively by means of post-growth thermal diffusion with large homogeneous dopant concentration and good optical quality[4,5]. The work outlined in this dissertation will focus on the spectroscopic characterization of TM-doped II-VI semiconductors. This work can be categorized into three major thrusts: 1) the development of novel laser materials, 2) improving and extending applications of TM:II-VI crystals as saturable absorbers, and 3) fabrication of laser active bulk crystals. Because current laser sources based on TM:II-VI materials do not cover the entire mid-IR spectral region, it is necessary to explore novel laser sources to extend available emissions toward longer wavelengths. The first objective of this dissertation is the spectroscopic characterization of novel ternary host crystals doped with Fe2+ ions. Using crystal field engineering, laser materials can be prepared with emissions placed in spectral regions not

  18. The Interplay of Shape and Crystalline Anisotropies in Plasmonic Semiconductor Nanocrystals.

    PubMed

    Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; Bergerud, Amy; Milliron, Delia J

    2016-06-08

    Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influence of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. This new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape.

  19. Conjugated polymers/semiconductor nanocrystals hybrid materials--preparation, electrical transport properties and applications.

    PubMed

    Reiss, Peter; Couderc, Elsa; De Girolamo, Julia; Pron, Adam

    2011-02-01

    This critical review discusses specific preparation and characterization methods applied to hybrid materials consisting of π-conjugated polymers (or oligomers) and semiconductor nanocrystals. These materials are of great importance in the quickly growing field of hybrid organic/inorganic electronics since they can serve as active components of photovoltaic cells, light emitting diodes, photodetectors and other devices. The electronic energy levels of the organic and inorganic components of the hybrid can be tuned individually and thin hybrid films can be processed using low cost solution based techniques. However, the interface between the hybrid components and the morphology of the hybrid directly influences the generation, separation and transport of charge carriers and those parameters are not easy to control. Therefore a large variety of different approaches for assembling the building blocks--conjugated polymers and semiconductor nanocrystals--has been developed. They range from their simple blending through various grafting procedures to methods exploiting specific non-covalent interactions between both components, induced by their tailor-made functionalization. In the first part of this review, we discuss the preparation of the building blocks (nanocrystals and polymers) and the strategies for their assembly into hybrid materials' thin films. In the second part, we focus on the charge carriers' generation and their transport within the hybrids. Finally, we summarize the performances of solar cells using conjugated polymer/semiconductor nanocrystals hybrids and give perspectives for future developments.

  20. Interfused semiconductor nanocrystals: brilliant blue photoluminescence and electroluminescence.

    PubMed

    Jun, Shinae; Jang, Eunjoo

    2005-09-28

    We describe a method for producing blue light-emitting interfused CdSe//ZnS (QE up to 60%) nanocrystals and report the good performance of an electroluminescent device which uses them (external quantum efficiency approximately 1.5 cd A(-1)).

  1. Fluorescence of semiconductor nanocrystals coupled to optical Tamm cavities

    NASA Astrophysics Data System (ADS)

    Feng, Fu; Pascale Senellart Team; Benoit Dubertret Team; Agnes Maitre Team

    We describe here the photoluminescence properties of a layer of colloidal CdSe/CdS fluorescent nanocrystals embedded in such a Tamm cavity. Spectral and angular analysis of fluorescence shows that the nanocrystals emission is into the Tamm states ; the emission dispersion relation for disks of various diameters shows the effect of the Tamm states lateral confinement. We also combined spatial and angular emission analysis and showed that the direction of emission is not the same for different points on a disk: emission from the left (resp. right) portion of the cavity is directed mostly in the left (resp. right) direction, in agreement with our numerical simulations. Our measurement scheme constitutes a probe of the Tamm state electric field phase gradient inside the cavity. Spatial and K space resolved spectroscopy.

  2. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    PubMed Central

    Nagpal, Prashant; Klimov, Victor I.

    2011-01-01

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges. PMID:21952220

  3. Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal films

    SciTech Connect

    Nagpal, Prashant; Klimov, Victor I.

    2011-09-27

    Colloidal semiconductor nanocrystals have attracted significant interest for applications in solution-processable devices such as light-emitting diodes and solar cells. However, a poor understanding of charge transport in nanocrystal assemblies, specifically the relation between electrical conductance in dark and under light illumination, hinders their technological applicability. Here we simultaneously address the issues of 'dark' transport and photoconductivity in films of PbS nanocrystals, by incorporating them into optical field-effect transistors in which the channel conductance is controlled by both gate voltage and incident radiation. Spectrally resolved photoresponses of these devices reveal a weakly conductive mid-gap band that is responsible for charge transport in dark. The mechanism for conductance, however, changes under illumination when it becomes dominated by band-edge quantized states. In this case, the mid-gap band still has an important role as its occupancy (tuned by the gate voltage) controls the dynamics of band-edge charges.

  4. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOEpatents

    Alivisatos, A.P.; Colvin, V.L.

    1998-05-12

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed. 10 figs.

  5. Luminescence, Plasmonic and Magnetic Properties of Doped Semiconductor Nanocrystals: Current Developments and Future Prospects.

    PubMed

    Pradhan, Narayan; Adhikari, Samrat Das; Nag, Angshuman; Sarma, D D

    2017-02-02

    Introducing few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing or even introduce new properties. For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centres, show thermometric optical switching, make suitable FRET donors by enhancing the excited state lifetime and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion in order to meet the current demand for renewable energy. Moreover, electrical as well as magnetic properties of the host are also strongly altered on doping. These dopant-induced beneficial changes in material properties suggest that doped nanocrystals with proper selections of dopant-host pairs may be helpful for generating designer materials for a wide range of current technological needs. Such exciting properties related to various aspects of doping a variety of semiconductor nanocrystals are summarized and reported in this mini review.

  6. Synthesis and photo-darkening/photo-brightening of blue emitting doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sarkar, Suresh; Guria, Amit K.; Patra, Biplab K.; Pradhan, Narayan

    2014-03-01

    By programming the synthetic reaction chemistry, stable blue emitting Cu(i) or Ag(i) doped Al(iii) co-doped ZnS (Al,Cu:ZnS or Al,Ag:ZnS) semiconductor nanocrystals are designed. Further, the photostability of the obtained intense blue-violet emission is studied, and the effects of doping/co-doping are correlated. Finally, it is revealed that the strong binding surface ligand 1-dodecanethiol and Al(iii) co-doping play pivotal roles in achieving such stable blue emitting doped nanocrystals.By programming the synthetic reaction chemistry, stable blue emitting Cu(i) or Ag(i) doped Al(iii) co-doped ZnS (Al,Cu:ZnS or Al,Ag:ZnS) semiconductor nanocrystals are designed. Further, the photostability of the obtained intense blue-violet emission is studied, and the effects of doping/co-doping are correlated. Finally, it is revealed that the strong binding surface ligand 1-dodecanethiol and Al(iii) co-doping play pivotal roles in achieving such stable blue emitting doped nanocrystals. Electronic supplementary information available: Detail of synthesis and supporting figures. See DOI: 10.1039/c3nr06048a

  7. 3D imaging of semiconductor colloid nanocrystals: on the way to nanodiagnostics of track membranes

    NASA Astrophysics Data System (ADS)

    Kulyk, S. I.; Eremchev, I. Y.; Gorshelev, A. A.; Naumov, A. V.; Zagorsky, D. L.; Kotova, S. P.; Volostnikov, V. G.; Vorontsov, E. N.

    2016-12-01

    The work concerns the feasibility of 3D optical diagnostic of porous media with subdifraction spatial resolution via epi-luminescence microscopy of single semiconductor colloid nanocrystals (quantum dots, QD) CdSe/ZnS used as emitting labels/nanoprobes. The nanoprecise reconstruction of axial coordinate is provided by double helix technique of point spread function transformation (DH-PSF). The results of QD localization in polycarbonate track membrane (TM) is presented.

  8. Investigation of quantum confinement in silicon and germanium semiconductor nanocrystals and their application in photonic devices

    NASA Astrophysics Data System (ADS)

    Delgado, Gildardo Rios

    1997-09-01

    A series of coordinated optical experiments were instrumental in developing a fundamental understanding of the optical and electronic properties of indirect energy gap nanocrystals. This dissertation points out critical interpretations in this new field. Nanocrystals represent a novel form of crystalline materials which have captured much attention due to their enhanced optical and electronic properties. Most commonly used semiconductors have band gap energies in the infrared to near infrared regions which make them undesirable for many optoelectronic devices. However, in nanocrystals theoretical models confirm that quantum confinement effects provide energy levels which allow for visible photoluminescence (PL). Quantum confinement effects enable indirect band gap semiconductors to become efficient visible light emitters. Optical results presented in this dissertation indicate that in the case of Si and Ge nanocrystals when the structures are on the order of 2 and 2-10 nanometers respectively, quantum confined energy levels become available that allow for efficient blue luminescence. Furthermore, results on nanocrystalline Si and Ge and comparison with theoretical models clearly demonstrate that efficient photoluminescence (PL) results from quantum confinement effects where the critical features are the size and the shape of nanostructures, and the surface termination. Silicon and germanium nanocrystals enable many advanced optoelectronic devices such as flat panel displays and optical memories. In this dissertation, I will discuss how Si and Ge nanocrystals were used to fabricate low-cost and easily processed blue electroluminescent devices. The active EL material consists of Si or Ge nanocrystals embedded in various host matrices such as polyvinylcarbazole (PVK) and other organic polymers. Major advantages of this composite material system are the ease of producing high quality, thin, conformal EL films. Several device configurations were used that rely on

  9. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  10. 1/f noise in semiconductor and metal nanocrystal solids

    SciTech Connect

    Liu, Heng Lhuillier, Emmanuel Guyot-Sionnest, Philippe

    2014-04-21

    Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.

  11. Charged two-exciton emission from a single semiconductor nanocrystal

    SciTech Connect

    Hu, Fengrui; Zhang, Qiang; Zhang, Chunfeng; Wang, Xiaoyong; Xiao, Min

    2015-03-30

    Here, we study the photoluminescence (PL) time trajectories of single CdSe/ZnS nanocrystals (NCs) as a function of the laser excitation power. At the low laser power, the PL intensity of a single NC switches between the “on” and “off” levels arising from the neutral and positively charged single excitons, respectively. With the increasing laser power, an intermediate “grey” level is formed due to the optical emission from a charged multiexciton state composed of two excitons and an extra electron. Both the inter-photon correlation and the PL decay measurements demonstrate that lifetime-indistinguishable photon pairs are emitted from this negatively charged two-exciton state.

  12. Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

    SciTech Connect

    Sheldon, Matthew T.; Trudeau, Paul-Emile; Mokari, Taleb; Wang, Lin-Wang; Alivisatos, A. Paul

    2009-08-19

    We report a 100,000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-Vis and X-Ray photoelectron spectroscopy indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75percent lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of nanocrystal surface structure for robust device performance and the advantage of this contact method.

  13. Enhanced semiconductor nanocrystal conductance via solution grown contacts.

    PubMed

    Sheldon, Matthew T; Trudeau, Paul-Emile; Mokari, Taleb; Wang, Lin-Wang; Alivisatos, A Paul

    2009-11-01

    We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.

  14. Multilayer hybrid LEDs based on colloidal inorganic semiconductors nanocrystal and PIN technology

    NASA Astrophysics Data System (ADS)

    Rizzo, Aurora; Mazzeo, Marco; Gigli, Giuseppe

    2008-04-01

    Light emitting devices (LEDs) based on colloidal semiconductor nanocrystals represent a matter of technological interest for the development of flat panel display and lighting systems. The appealing features of these materials are the high fluorescence efficiency, narrow ban edge emission, potential chemical stability, and tunable light emission across the visible spectrum. However the integration of these materials in the very promising PIN technology is still challenging due to the lack of an appropriate QD deposition technique. So far only wet deposition methods such as spin-coating and drop-casting have been exploited to realize QD thin film. Moreover QD thermal evaporation is not possible because of their high molecular weight. In this scenario we developed a dry, simple, and inexpensive deposition technique to transfer semiconductor QDs on organic semiconductor materials. We exploited this technique to fabricated an organic/inorganic hybrid red emitting device whit a doped hole transport layer.

  15. Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

    NASA Astrophysics Data System (ADS)

    Suárez Alvarez, Isaac

    2016-10-01

    Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

  16. Broadband up-conversion at subsolar irradiance: triplet-triplet annihilation boosted by fluorescent semiconductor nanocrystals.

    PubMed

    Monguzzi, A; Braga, D; Gandini, M; Holmberg, V C; Kim, D K; Sahu, A; Norris, D J; Meinardi, F

    2014-11-12

    Conventional solar cells exhibit limited efficiencies in part due to their inability to absorb the entire solar spectrum. Sub-band-gap photons are typically lost but could be captured if a material that performs up-conversion, which shifts photon energies higher, is coupled to the device. Recently, molecular chromophores that undergo triplet-triplet annihilation (TTA) have shown promise for efficient up-conversion at low irradiance, suitable for some types of solar cells. However, the molecular systems that have shown the highest up-conversion efficiency to date are ill suited to broadband light harvesting, reducing their applicability. Here we overcome this limitation by combining an organic TTA system with highly fluorescent CdSe semiconductor nanocrystals. Because of their broadband absorption and spectrally narrow, size-tunable fluorescence, the nanocrystals absorb the radiation lost by the TTA chromophores, returning this energy to the up-converter. The resulting nanocrystal-boosted system shows a doubled light-harvesting ability, which allows a green-to-blue conversion efficiency of ∼12.5% under 0.5 suns of incoherent excitation. This record efficiency at subsolar irradiance demonstrates that boosting the TTA by light-emitting nanocrystals can potentially provide a general route for up-conversion for different photovoltaic and photocatalytic applications.

  17. Effect of random potential on the optical properties of the CdS x Se1 - x semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sedrakyan, D. M.; Petrosyan, P. G.; Grigoryan, L. N.

    2015-05-01

    CdS x Se1 - x semiconductor crystals in silicate glass with different degrees of perfection of crystal-line lattice are fabricated. The spectral features of the optical transmittance and photoluminescence at the initial stage of the heat treatment cannot be interpreted using only the diffusion growth of nanocrystals. Structural defects of nanocrystals must be taken into account at the initial stage of the crystal growth.

  18. A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

    NASA Astrophysics Data System (ADS)

    Liu, Yan; Shen, Qihui; Yu, Dongdong; Shi, Weiguang; Li, Jixue; Zhou, Jianguang; Liu, Xiaoyang

    2008-06-01

    One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

  19. Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals

    NASA Astrophysics Data System (ADS)

    Lindberg, G. P.; Weinstein, B. A.

    2016-10-01

    Precipitation of anion nanocrystals (NCs) in initially stoichiometric II-VI crystals under hydrostatic pressure and light exposure is explored by Raman spectroscopy, and the mechanism for this effect is analyzed by model calculations. ZnSe, ZnTe, and CdSe crystals are studied in bulk and/or epitaxial-film forms. Se and Te NCs in the trigonal (t) phase precipitate in ZnSe and ZnTe, but the effect is absent or minimal in CdSe. The precipitation is induced by pressure and assisted by sub-band-gap light. In ZnSe, t-Se NCs appear for pressure exceeding 4.8 GPa and light flux above 50 -70 W /m m2 . In ZnTe, the precipitation of t-Te NCs requires less pressure to initiate, and there is a clear upper-pressure limit for t-Te nuclei to form. We find also that ZnTe samples with cleavage damage or elevated zinc-vacancy content are more prone to form t-Te NCs at lower pressures (even 1 atm in some cases) and lower flux. The precipitation seen in ZnSe and ZnTe occurs at pressures far below their phase transitions, and cannot be due to those transitions. Rather, we propose that the NCs nucleate on dislocations that arise from hydrostatic-pressure induced plastic flow triggered by noncubic defect sites. Calculations of the kinetic barrier for growth of an optimally shaped nucleus are performed, including hydrostatic pressure in the energy minimization scheme. Using sensible values for the model parameters related to the cohesive energies of Se and Te, the calculations account for our main observations, including the existence of an upper pressure limit for precipitation, and the absence of precipitation in CdSe. We consider the effects of pressure-induced precipitate formation on the I-II phase transitions in a variety of binary semiconductors and make predictions of when this effect should be important.

  20. Rational design of the gram-scale synthesis of nearly monodisperse semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Protière, Myriam; Nerambourg, Nicolas; Renard, Olivier; Reiss, Peter

    2011-07-01

    We address two aspects of general interest for the chemical synthesis of colloidal semiconductor nanocrystals: (1) the rational design of the synthesis protocol aiming at the optimization of the reaction parameters in a minimum number of experiments; (2) the transfer of the procedure to the gram scale, while maintaining a low size distribution and maximizing the reaction yield. Concerning the first point, the design-of-experiment (DOE) method has been applied to the synthesis of colloidal CdSe nanocrystals. We demonstrate that 16 experiments, analyzed by means of a Taguchi L16 table, are sufficient to optimize the reaction parameters for controlling the mean size of the nanocrystals in a large range while keeping the size distribution narrow (5-10%). The DOE method strongly reduces the number of experiments necessary for the optimization as compared to trial-and-error approaches. Furthermore, the Taguchi table analysis reveals the degree of influence of each reaction parameter investigated (e.g., the nature and concentration of reagents, the solvent, the reaction temperature) and indicates the interactions between them. On the basis of these results, the synthesis has been scaled up by a factor of 20. Using a 2-L batch reactor combined with a high-throughput peristaltic pump, different-sized samples of CdSe nanocrystals with yields of 2-3 g per synthesis have been produced without sacrificing the narrow size distribution. In a similar setup, the gram-scale synthesis of CdSe/CdS/ZnS core/shell/shell nanocrystals exhibiting a fluorescence quantum yield of 81% and excellent resistance of the photoluminescence in presence of a fluorescent quencher (aromatic thiol) has been achieved. PACS: 81.20.Ka, 81.07.Bc, 78.67.Bf

  1. Rational design of the gram-scale synthesis of nearly monodisperse semiconductor nanocrystals

    PubMed Central

    2011-01-01

    We address two aspects of general interest for the chemical synthesis of colloidal semiconductor nanocrystals: (1) the rational design of the synthesis protocol aiming at the optimization of the reaction parameters in a minimum number of experiments; (2) the transfer of the procedure to the gram scale, while maintaining a low size distribution and maximizing the reaction yield. Concerning the first point, the design-of-experiment (DOE) method has been applied to the synthesis of colloidal CdSe nanocrystals. We demonstrate that 16 experiments, analyzed by means of a Taguchi L16 table, are sufficient to optimize the reaction parameters for controlling the mean size of the nanocrystals in a large range while keeping the size distribution narrow (5-10%). The DOE method strongly reduces the number of experiments necessary for the optimization as compared to trial-and-error approaches. Furthermore, the Taguchi table analysis reveals the degree of influence of each reaction parameter investigated (e.g., the nature and concentration of reagents, the solvent, the reaction temperature) and indicates the interactions between them. On the basis of these results, the synthesis has been scaled up by a factor of 20. Using a 2-L batch reactor combined with a high-throughput peristaltic pump, different-sized samples of CdSe nanocrystals with yields of 2-3 g per synthesis have been produced without sacrificing the narrow size distribution. In a similar setup, the gram-scale synthesis of CdSe/CdS/ZnS core/shell/shell nanocrystals exhibiting a fluorescence quantum yield of 81% and excellent resistance of the photoluminescence in presence of a fluorescent quencher (aromatic thiol) has been achieved. PACS: 81.20.Ka, 81.07.Bc, 78.67.Bf PMID:21791060

  2. Resonance energy transfer in conjugates of semiconductor nanocrystals and organic dye molecules

    NASA Astrophysics Data System (ADS)

    Artemyev, Mikhail

    2012-01-01

    I analyze the efficiency of Förster resonance energy transfer (FRET) in luminescent donor-acceptor complexes based on conjugates of CdSe/ZnS quantum dots and nanorods and the luminescent dyes. Semiconductor nanocrystals serve either as FRET donors or acceptors. Experimentally observed reduced FRET efficiency in complexes of nanorods and dye molecules as compared to quantum dots are found to be attributable to a distance-limited energy transfer rate in case of point-like dye dipoles and extended nanorod dipole.

  3. The colloidal chemistry synthesis and electron microscopy characterization of shape-controlled metal and semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Biacchi, Adam J.

    Solution methods of materials synthesis have found application in a variety of fields due to the diversity of products accessible, facility of process scalability, and the ease of tuning their properties through prudent selection of reaction conditions. Control of experimental variables during the formation of colloidally stable nanoscale solids within a liquid matrix allows for tailoring of the particles' characteristics, including shape, size, composition, and surface chemistry. In this dissertation, I will discuss how the manipulation of reaction chemistries can be used to synthesize shape-controlled metal and semiconductor colloidal nanocrystals. Further, I will elaborate on the mechanisms by which these particles form from molecular precursors and describe how their properties can differ from their bulk analogues through extensive characterization, especially using transmission electron microscopy. These studies contribute to the continued development of chemical routes to nanocrystals and their application as functional materials. First, I will review recent advances in the synthesis and characterization of shape-controlled nanocrystals, as well as highlight their promising applicability in a number of emerging technologies. These principles will then be leveraged to the specific case of catalytically-active rhodium nanocrystals, which can be synthesized with morphological and dimensional control using a polyol solution-mediated strategy. I describe an innovative shape-controlled synthesis to monodisperse colloidal rhodium icosahedra, cubes, triangular plates, and octahedra using this route. Additionally, new insights into the important role of the polyol reducing solvent on the synthesis of these nanocrystals are revealed, and how these might be exploited to engender superior reaction control and novel products. Next, I will describe how a crystallization mechanism was established for the synthesis of numerous morphologies of noble metal nanocrystals. I

  4. Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals

    SciTech Connect

    Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

    2006-09-09

    In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

  5. Nanocrystals encapsulated in SiO2 particles: silanization and homogenous coating for bio applications.

    PubMed

    Yang, Ping; Li, Xiaoyu; Zhang, Ruili; Liu, Ning; Zhang, Yulan

    2013-03-01

    Sol-gel procedures have been developed to encapsulate inorganic nanocrystals including metallic Au and II-VI semiconductor materials (CdSe/Cd(1-x)Zn(x)S) in SiO2 particles by using tetraethyl orthosilicate. The key strategy was the control of a sol-gel procedure. The anisotropic deposition of SiO2 monomers occurs because well-developed crystal facets having different affinity to SiO2 monomers. SiO2 monomers were not homogeneously deposited on nonspherical Au and CdSe/Cd(1-x)Zn(x)S nanocrystals. A surface silanization process, partly hydrolyzed tetraethyl orthosilicate were attached to the nanocrystals instead of initial ligands, plays an important role for the nanocrystals coated homogeneously with a SiO2 layer. Furthermore, CdSe/Cd(1-x)Zn(x)S nanocrystals were homogeneously coated with a thin SiO2 layer by the surface silanization process and a subsequent reverse micelle route. Colloidal Au nanocrystals were homogeneously coated with a SiO2 shell by the surface silanization process and subsequent Stöber synthesis without using a silane coupling agent or bulk polymer as the surface primer to render the Au surface vitreophilic. These results indicated partly hydrolyzed tetraethyl orthosilicate has an ability to replace the ligand on nanocrystals. After surface modification, the SiO2 particles with nanocrystals were conjugated with antibody for bioapplications.

  6. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, Shen; Li, Chao; Scripa, R.; Lehoczky, Sandra L.; Kim, Y. W.; Baird, J. K.; Lin, B.; Ban, Heng; Benmore, Chris

    2003-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.

  7. Getting across the plasma membrane and beyond: intracellular uses of colloidal semiconductor nanocrystals.

    PubMed

    Luccardini, Camilla; Yakovlev, Aleksey; Gaillard, Stéphane; van 't Hoff, Marcel; Alberola, Alicia Piera; Mallet, Jean-Maurice; Parak, Wolfgang J; Feltz, Anne; Oheim, Martin

    2007-01-01

    Semiconductor nanocrystals (NCs) are increasingly being used as photoluminescen markers in biological imaging. Their brightness, large Stokes shift, and high photostability compared to organic fluorophores permit the exploration of biological phenomena at the single-molecule scale with superior temporal resolution and spatial precision. NCs have predominantly been used as extracellular markers for tagging and tracking membrane proteins. Successful internalization and intracellular labelling with NCs have been demonstrated for both fixed immunolabelled and live cells. However, the precise localization and subcellular compartment labelled are less clear. Generally, live cell studies are limited by the requirement of fairly invasive protocols for loading NCs and the relatively large size of NCs compared to the cellular machinery, along with the subsequent sequestration of NCs in endosomal/lysosomal compartments. For long-period observation the potential cytotoxicity of cytoplasmically loaded NCs must be evaluated. This review focuses on the challenges of intracellular uses of NCs.

  8. The More Exotic Shapes of Semiconductor Nanocrystals: Emerging Applications in Bioimaging

    PubMed Central

    Lim, Sung Jun; Smith, Andrew; Nie, Shuming

    2014-01-01

    Semiconductor nanocrystals are tiny fluorescent particles that have recently made a major impact in the biological and medical sciences by enabling high-sensitivity imaging of biomolecules, cells, and tissues. Spherical quantum dots are the prototypical material for these applications but recent synthetic advances have led to a diverse range of nanostructures with controllable sizes, shapes, and materials combinations that offer new dimensions of optical and structural tunability. Uniform anisotropic shapes with linearly polarized light emission allow optical imaging of particle orientation, planar structures have large flexible surfaces and ultra-narrow electronic transitions, and compact nanoparticles have enhanced diffusion in crowded biological environments. These properties are providing unique opportunities to probe basic biological processes, cellular structures, and organismal physiology. PMID:24982823

  9. General low-temperature reaction pathway from precursors to monomers before nucleation of compound semiconductor nanocrystals

    PubMed Central

    Yu, Kui; Liu, Xiangyang; Qi, Ting; Yang, Huaqing; Whitfield, Dennis M.; Y. Chen, Queena; Huisman, Erik J. C.; Hu, Changwei

    2016-01-01

    Little is known about the molecular pathway to monomers of semiconductor nanocrystals. Here we report a general reaction pathway, which is based on hydrogen-mediated ligand loss for the precursor conversion to ‘monomers' at low temperature before nucleation. We apply 31P nuclear magnetic resonance spectroscopy to monitor the key phosphorous-containing products that evolve from MXn+E=PPh2H+HY mixtures, where MXn, E=PPh2H, and HY are metal precursors, chalcogenide precursors, and additives, respectively. Surprisingly, the phosphorous-containing products detected can be categorized into two groups, Ph2P–Y and Ph2P(E)–Y. On the basis of our experimental and theoretical results, we propose two competing pathways to the formation of M2En monomers, each of which is accompanied by one of the two products. Our study unravels the pathway of precursor evolution into M2En monomers, the stoichiometry of which directly correlates with the atomic composition of the final compound nanocrystals. PMID:27531507

  10. Semiconductor nanocrystal-aptamer bioconjugate probes for specific prostate carcinoma cell targeting

    NASA Astrophysics Data System (ADS)

    Shieh, Felice; Lavery, Laura; Chu, Chitai T.; Richards-Kortum, Rebecca; Ellington, Andrew D.; Korgel, Brian A.

    2005-04-01

    Cancer of the prostate affects approximately 1 in 11 men. Current early screening for prostate cancer utilizes digital rectal examinations to detect anomalies in the prostate gland and blood test screenings for upregulated levels of prostate specific antigen (PSA). Many of these tests are invasive and can often be inconclusive as PSA levels may be heightened due to benign factors. Prostate specific membrane antigen (PSMA), a well-characterized integral membrane protein, is expressed in virtually all prostate cancers and often correlates with cancer aggressiveness. Therefore, it may be used as an indicator of cancer growth and metastases. PSMA-specific antibodies have been identified and conjugated to fluorescent markers for cancer cell targeting; however, both the antibodies and markers possess significant limitations in their pharmaceutical and diagnostic value. Here we report the use of semiconductor nanocrystals bioconjugated to PSMA-specific aptamer recognition molecules for prostate carcinoma cell targeting. The nanocrystal/aptamer bioconjugates are small biocompatible probes with the potential for color-tunability for multicolor imaging. Ongoing in vitro and in vivo research seeks to introduce these nanoparticle bioconjugates into medical diagnostics.

  11. Charge Blinking Statistics of Semiconductor Nanocrystals Revealed by Carbon Nanotube Single Charge Sensors.

    PubMed

    Zbydniewska, Ewa; Duzynska, Anna; Popoff, Michka; Hourlier, Djamila; Lenfant, Stéphane; Judek, Jaroslaw; Zdrojek, Mariusz; Mélin, Thierry

    2015-10-14

    We demonstrate the relation between the optical blinking of colloidal semiconductor nanocrystals (NCs) and their electrical charge blinking for which we provide the first experimental observation of power-law statistics. To show this, we harness the performance of CdSe/ZnS NCs coupled with carbon nanotube field-effect transistors (CNTFETs), which act as single charge-sensitive electrometers with submillisecond time resolution, at room temperature. A random telegraph signal (RTS) associated with the NC single-trap charging is observed and exhibits power-law temporal statistics (τ(-α), with α in the range of ∼1-3), and a Lorentzian current noise power spectrum with a well-defined 1/f(2) corner. The spectroscopic analysis of the NC-CNTFET devices is consistent with the charging of NC defect states with a charging energy of Ec ≥ 200 meV. These results pave the way for a deeper understanding of the physics and technology of nanocrystal-based optoelectronic devices.

  12. Direct measurement of lattice dynamics and optical phonon excitation in semiconductor nanocrystals using femtosecond stimulated Raman spectroscopy.

    PubMed

    Hannah, Daniel C; Brown, Kristen E; Young, Ryan M; Wasielewski, Michael R; Schatz, George C; Co, Dick T; Schaller, Richard D

    2013-09-06

    We report femtosecond stimulated Raman spectroscopy measurements of lattice dynamics in semiconductor nanocrystals and characterize longitudinal optical (LO) phonon production during confinement-enhanced, ultrafast intraband relaxation. Stimulated Raman signals from unexcited CdSe nanocrystals produce a spectral shape similar to spontaneous Raman signals. Upon photoexcitation, stimulated Raman amplitude decreases owing to experimentally resolved ultrafast phonon generation rates within the lattice. We find a ∼600  fs, particle-size-independent depletion time attributed to hole cooling, evidence of LO-to-acoustic down-conversion, and LO phonon mode softening.

  13. Self-Organized Nanostructures in Wide-Band-Gap II-VI's

    NASA Astrophysics Data System (ADS)

    Furdyna, J. K.

    1997-03-01

    We describe three distinct categories of self-organized phenomena observed in the MBE growth of II-VI semiconductors. First, we describe self-organized formation of compositionally-modulated ZnSe_1-xTex superlattices. Periodic modulation of composition x in this alloy occurs spontaneously when Zn, Se, and Te fluxes are simultaneously incident on vicinal (100) GaAs substrates. The period is highly regular, with typical values between 20Åand 40Åand is long-range in character. Second, we discuss formation of self-assembled CdSe quantum dots (QDs) on ZnSe, or on ZnSe-based alloys (e.g., Zn_1-xCd_xSe, Zn_1-xMn_xSe). We note that the relationship of CdSe and ZnSe is a close parallel, in terms of strain, to that of InAs and GaAs. Since the self-organized formation of QDs is expected to be strongly sensitive to strain as well as to element-specific chemistries, comparison of CdSe dots on ZnSe with the already well estabilis! he! d InAs quantum dots on GaAs should be especially interesting. Finally, we discuss self-organized formation of interesting surface morphologies observed in the growth of MnSe on GaAs. Although not strictly a II-VI compound, MnSe is of interest in the II-VI context because it readily forms alloys (e.g., Zn_1-xMn_xSe) or superlattices (e.g., ZnSe/MnSe) with the canonical II-VIs. In the MBE process described here MnSe, when grown on GaAs or ZnSe, forms high-quality monocrystalline layers with NaCl structure. The surfaces of these layers display interesting regular patterns on the mesoscopic scale, that can be controlled by growth conditions. It is possible that such patterns can serve as "templates" for deposition of II-VI quantum wire networks. Collaborators: S.P. Ahrenkiel, M. Al-Jassim, A.-L. Barabasi, M. Dobrowolska, S. Lee, H. Luo, J.L. Merz, Q. Shen, P.D. Wang

  14. Bioinspired solar water splitting, sensitized solar cells, and ultraviolet sensor based on semiconductor nanocrystal antenna/graphene nanoassemblies

    NASA Astrophysics Data System (ADS)

    Chang, Haixin; Lv, Xiaojun; Zheng, Zijian; Wu, Hongkai

    2011-11-01

    Graphene, two-dimensional carbon crystal with only one atom thickness, provides a general platform for nanoscale even atomic scale optoelectronics and photonics. Graphene has many advantages for optoelectronics such as high conductivity, high electronic mobility, flexibility and transparency. However, graphene also has disadvantages such as low light absorption which are unfavorable for optoelectronic devices. On the other hand, many natural photonic systems provide wonderful solution to enhance light absorption for solar energy harvesting and conversion, such as chlorophyll in green plants. Herein, learning from nature, we described bioinspired photocatalytic solar-driven water splitting, sensitized solar cells and ultraviolet optoelectronic sensors enabled by introducing photosensitive semiconductor nanocrystal antenna to graphene for constructing a series of graphene/nanocrystal nanoassemblies. We have demonstrated that high performance optoelectronic devices can come true with the introducing of photosensitive nanocrystal antenna elements.

  15. Bioinspired solar water splitting, sensitized solar cells, and ultraviolet sensor based on semiconductor nanocrystal antenna/graphene nanoassemblies

    NASA Astrophysics Data System (ADS)

    Chang, Haixin; Lv, Xiaojun; Zheng, Zijian; Wu, Hongkai

    2012-02-01

    Graphene, two-dimensional carbon crystal with only one atom thickness, provides a general platform for nanoscale even atomic scale optoelectronics and photonics. Graphene has many advantages for optoelectronics such as high conductivity, high electronic mobility, flexibility and transparency. However, graphene also has disadvantages such as low light absorption which are unfavorable for optoelectronic devices. On the other hand, many natural photonic systems provide wonderful solution to enhance light absorption for solar energy harvesting and conversion, such as chlorophyll in green plants. Herein, learning from nature, we described bioinspired photocatalytic solar-driven water splitting, sensitized solar cells and ultraviolet optoelectronic sensors enabled by introducing photosensitive semiconductor nanocrystal antenna to graphene for constructing a series of graphene/nanocrystal nanoassemblies. We have demonstrated that high performance optoelectronic devices can come true with the introducing of photosensitive nanocrystal antenna elements.

  16. Challenge to the Charging Model of Semiconductor-Nanocrystal Fluorescence Intermittency from Off-State Quantum Yields and Multiexciton Blinking

    NASA Astrophysics Data System (ADS)

    Zhao, Jing; Nair, Gautham; Fisher, Brent R.; Bawendi, Moungi G.

    2010-04-01

    Semiconductor nanocrystals emit light intermittently; i.e., they “blink,” under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core(shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10∶1. These results directly contradict the predictions of the charging model.

  17. Challenge to the Charging Model of Semiconductor-Nanocrystal Fluorescence Intermittency from Off-State Quantum Yields and Multiexciton Blinking

    PubMed Central

    Zhao, Jing; Nair, Gautham; Fisher, Brent R.; Bawendi, Moungi G.

    2012-01-01

    Semiconductor nanocrystals emit light intermittently; i.e., they “blink,” under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core (shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10:1. These results directly contradict the predictions of the charging model. PMID:20482016

  18. Challenge to the charging model of semiconductor-nanocrystal fluorescence intermittency from off-state quantum yields and multiexciton blinking.

    PubMed

    Zhao, Jing; Nair, Gautham; Fisher, Brent R; Bawendi, Moungi G

    2010-04-16

    Semiconductor nanocrystals emit light intermittently; i.e., they "blink," under steady illumination. The dark periods have been widely assumed to be due to photoluminescence (PL) quenching by an Auger-like process involving a single additional charge present in the nanocrystal. Our results challenge this long-standing assumption. Close examination of exciton PL intensity time traces of single CdSe(CdZnS) core(shell) nanocrystals reveals that the dark state PL quantum yield can be 10 times less than the biexciton PL quantum yield. In addition, we observe spectrally resolved multiexciton emission and find that it also blinks with an on/off ratio greater than 10:1. These results directly contradict the predictions of the charging model.

  19. Cyclotron Splittings in the Plasmon Resonances of Electronically Doped Semiconductor Nanocrystals Probed by Magnetic Circular Dichroism Spectroscopy.

    PubMed

    Hartstein, Kimberly H; Schimpf, Alina M; Salvador, Michael; Gamelin, Daniel R

    2017-04-10

    A fundamental understanding of the rich electronic structures of electronically doped semiconductor nanocrystals is vital for assessing the utility of these materials for future applications from solar cells to redox catalysis. Here, we examine the use of magnetic circular dichroism (MCD) spectroscopy to probe the infrared localized surface plasmon resonances of p-Cu2-xSe, n-ZnO, and tin-doped In2O3 (n-ITO) nanocrystals. We demonstrate that the MCD spectra of these nanocrystals can be analyzed by invoking classical cyclotron motions of their excess charge carriers, with experimental MCD signs conveying the carrier types (n or p) and experimental MCD intensities conveying the cyclotron splitting magnitudes. The experimental cyclotron splittings can then be used to quantify carrier effective masses (m*), with results that agree with bulk in most cases. MCD spectroscopy thus offers a unique measure of m* in free-standing colloidal semiconductor nanocrystals, raising new opportunities to investigate the influence of various other synthetic or environmental parameters on this fundamentally important electronic property.

  20. Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Urbańczyk, A.; Hamhuis, G. J.; Nötzel, R.

    2011-05-01

    We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.

  1. Universal Near-Infrared and Mid-Infrared Optical Modulation for Ultrafast Pulse Generation Enabled by Colloidal Plasmonic Semiconductor Nanocrystals.

    PubMed

    Guo, Qiangbing; Yao, Yunhua; Luo, Zhi-Chao; Qin, Zhipeng; Xie, Guoqiang; Liu, Meng; Kang, Jia; Zhang, Shian; Bi, Gang; Liu, Xiaofeng; Qiu, Jianrong

    2016-09-21

    Field effect relies on the nonlinear current-voltage relation in semiconductors; analogously, materials that respond nonlinearly to an optical field can be utilized for optical modulation. For instance, nonlinear optical (NLO) materials bearing a saturable absorption (SA) feature an on-off switching behavior at the critical pumping power, thus enabling ultrafast laser pulse generation with high peak power. SA has been observed in diverse materials preferably in its nanoscale form, including both gaped semiconductor nanostructures and gapless materials like graphene; while the presence of optical bandgap and small carrier density have limited the active spectral range and intensity. We show here that solution-processed plasmonic semiconductor nanocrystals exhibit superbroadband (over 400 THz) SA, meanwhile with large modulation depth (∼7 dB) and ultrafast recovery (∼315 fs). Optical modulators fabricated using these plasmonic nanocrystals enable mode-locking and Q-switching operation across the near-infrared and mid-infrared spectral region, as exemplified here by the pulsed lasers realized at 1.0, 1.5, and 2.8 μm bands with minimal pulse duration down to a few hundreds of femtoseconds. The facile accessibility and superbroadband optical nonlinearity offered by these nonconventional plasmonic nanocrystals may stimulate a growing interest in the exploiting of relevant NLO and photonic applications.

  2. II-VI compounds 1985; Proceedings of the Second International Conference, Aussois, France, March 4-8, 1985

    NASA Astrophysics Data System (ADS)

    Marfaing, Y.; Triboulet, R.; Lunn, B.; Mullin, J. B.

    1985-08-01

    Among the topics considered concerning II-VI compounds are growth of low resistivity high-quality ZnSe, ZnS films by low-pressure metal-organic vapor phase epitaxy growth of Cd(x)Zn(1-x)S, growth of high-purity ZnSe by sublimation traveling-heater method (THM) and the characteristics of the Y and Z deep level emission line, properties of CdTe crystals grown by THM using Cd as the solvent, and liquid-phase epitaxy growth and characterization of 1.3-micron (Hg, Cd)Te layers. Also considered are the self-consistent electronic structure of vacancies in semiconductors, defects in cadmium selenide, luminescence characterization of residual impurities in CdTe grown by molecular beam epitaxy, and photoluminescence of Cd-rich Hg(1-x)Cd(x)Te alloys with x = 0.7-1.0. Additional topics discussed are optically detected magnetic resonance studies of recombination emission in II-VI compounds, X-ray photoemission spectroscopy and magnetotransport studies on the surface of CdHgTe, cadmium mercury telluride infrared detectors, and electron beam-pumped II-VI lasers.

  3. Mn(2+)-Doped Lead Halide Perovskite Nanocrystals with Dual-Color Emission Controlled by Halide Content.

    PubMed

    Liu, Wenyong; Lin, Qianglu; Li, Hongbo; Wu, Kaifeng; Robel, István; Pietryga, Jeffrey M; Klimov, Victor I

    2016-11-16

    Impurity doping has been widely used to endow semiconductor nanocrystals with novel optical, electronic, and magnetic functionalities. Here, we introduce a new family of doped NCs offering unique insights into the chemical mechanism of doping, as well as into the fundamental interactions between the dopant and the semiconductor host. Specifically, by elucidating the role of relative bond strengths within the precursor and the host lattice, we develop an effective approach for incorporating manganese (Mn) ions into nanocrystals of lead-halide perovskites (CsPbX3, where X = Cl, Br, or I). In a key enabling step not possible in, for example, II-VI nanocrystals, we use gentle chemical means to finely and reversibly tune the nanocrystal band gap over a wide range of energies (1.8-3.1 eV) via postsynthetic anion exchange. We observe a dramatic effect of halide identity on relative intensities of intrinsic band-edge and Mn emission bands, which we ascribe to the influence of the energy difference between the corresponding transitions on the characteristics of energy transfer between the Mn ion and the semiconductor host.

  4. Can high pressure I-II transitions in semiconductors be affected by plastic flow and nanocrystal precipitation in phase I?

    NASA Astrophysics Data System (ADS)

    Weinstein, B. A.; Lindberg, G. P.

    Pressure-Raman spectroscopy in ZnSe and ZnTe single crystals reveals that Se and Te nano-crystals (NCs) precipitate in these II-VI hosts for pressures far below their I-II phase transitions. The inclusions are evident from the appearance and negative pressure-shift of the A1 Raman peaks of Se and Te (trigonal phase). The Se and Te NCs nucleate at dislocations and grain boundaries that arise from pressure-induced plastic flow. This produces chemical and structural inhomogeneities in the zincblende phase of the host. At substantially higher pressures, the I-II transition proceeds in the presence of these inhomogenities. This can affect the transition's onset pressure Pt and width ΔPt, and the occurrence of metastable phases along the transition path. Precipitation models in metals show that nucleation of inclusions depends on the Peierls stress τp and a parameter α related to the net free energy gained on nucleation. For favorable values of τp and α, NC precipitation at pressures below the I-II transition could occur in other compounds. We propose criteria to judge whether this is likely based on the observed ranges of τp in the hosts, and estimates of α derived from the cohesive energy densities of the NC materials. One finds trends that can serve as a useful guide, both to test the proposed criteria, and to decide when closer scrutiny of phase transition experiments is warranted, e.g., in powders where high dislocation densities are initially created

  5. Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications

    PubMed Central

    2015-01-01

    Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics. By tuning the number of Mn2+ ions per dot from ∼500 to 20 in Mn2+ doped ZnSe nanocrystals (Mn:ZnSe d-dots), the single-exponential PL decay lifetime was continuously tuned from ∼50 to 1000 μs. A synthetic scheme was further developed for uniform and epitaxial growth of thick ZnS shell, ∼7 monolayers. The resulting Mn:ZnSe/ZnS core/shell d-dots were found to be essential for necessary environmental durability of the PL properties, both steady-state and transient ones, for the d-dot emitters. These characteristics combined with intense absorption and high PL quantum yields (70 ± 5%) enabled greatly simplified schemes for various applications of PL lifetime multiplexing using Mn:ZnSe/ZnS core/shell d-dots. PMID:27163024

  6. The interface effect on the band offset of semiconductor nanocrystals with type-I core-shell structure.

    PubMed

    Zhu, Ziming; Ouyang, Gang; Yang, Guowei

    2013-04-21

    In order to pursue the interface effect on the band offset of the semiconductor nanocrystals with the type-I core-shell structure, we have established a theoretical model to elucidate the underlying mechanism based on the atomic-bond-relaxation consideration and continuum mechanics. It was found that the size-dependent interface bond-nature-factor of the core-shell nanocrystals can be deduced on the basis of the proposed model. Taking the typical CdSe-ZnSe nanostructure as an example, we showed that the theoretical results were consistent with the experimental observations. These investigations provided a useful guide in opening up the possibility to engineer nanodevices with special optoelectronic properties.

  7. NMR studies of the surface structure and dynamics of semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sachleben, Joseph R.; Wooten, E. Wrenn; Emsley, Lyndon; Pines, Alexander; Colvin, Vicki L.; Alivisatos, A. Paul

    1992-10-01

    1H NMR studies of thiophenol capping groups on cadmium sulfide nanocrystals demonstrate that the coverage of the capping molecule depends on the size of the nanocrystal. Data are presented which show that as the size of the nanocrystal increases, the coverage of thiophenol decreases. In addition, information about the overall tumbling of the nanocrystal and the motion of the capping groups relative to the surface can be obtained from linewidth studies, indicating that the rotation of the capping groups is hindered in the smaller nanocrystals ( r≈12 Å) and becomes less so in larger nanocrystals ( r≈20 Å). The coverage data are related to the electronic properties of this important class of compounds.

  8. Contact Radius and the Insulator-Metal Transition in Films Comprised of Touching Semiconductor Nanocrystals.

    PubMed

    Lanigan, Deanna; Thimsen, Elijah

    2016-07-26

    Nanocrystal assemblies are being explored for a number of optoelectronic applications such as transparent conductors, photovoltaic solar cells, and electrochromic windows. Majority carrier transport is important for these applications, yet it remains relatively poorly understood in films comprised of touching nanocrystals. Specifically, the underlying structural parameters expected to determine the transport mechanism have not been fully elucidated. In this report, we demonstrate experimentally that the contact radius, between touching heavily doped ZnO nanocrystals, controls the electron transport mechanism. Spherical nanocrystals are considered, which are connected by a circular area. The radius of this circular area is the contact radius. For nanocrystals that have local majority carrier concentration above the Mott transition, there is a critical contact radius. If the contact radius between nanocrystals is less than the critical value, then the transport mechanism is variable range hopping. If the contact radius is greater than the critical value, the films display behavior consistent with metallic electron transport.

  9. Nanocrystal synthesis

    SciTech Connect

    Tisdale, William; Prins, Ferry; Weidman, Mark; Beck, Megan

    2016-11-01

    A method of preparing monodisperse MX semiconductor nanocrystals can include contacting an M-containing precursor with an X donor to form a mixture, where the molar ratio between the M containing precursor and the X donor is large. Alternatively, if additional X donor is added during the reaction, a smaller ratio between the M containing precursor and the X donor can be used to prepare monodisperse MX semiconductor nanocrystals.

  10. Spectroscopic characterization of Fe2+-doped II-VI ternary and quaternary mid-IR laser active powders

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Martyshkin, D. V.; Fedorov, V. V.; Mirov, S. B.

    2014-02-01

    We report on spectroscopic characterization of laser active powders based on iron doped II-VI ternary and quaternary semiconductors for mid-IR laser applications. Iron doped Cd1-x MnxTe, Cd1-x MnxS, Cd1-xMnxSe, Cd0.5Mn0.5S0.5Se0.5 , Cd1-xZnxTe compounds with x=0.5-0.25, were prepared by using thermo diffusion technique. The starting binary powders were mixed in the appropriate molar ratios, sealed in evacuated (10-3 Torr) quartz ampoules, and annealed at 800-1000oC for several days. Samples composition, integrity, and grain size were characterized by micro-Raman and Xray diffraction and revealed a variation of the crystal field parameters depending on powder composition. Fe2+ photoluminescence was characterized by spectral band position (normalized with respect to the detection platform spectral sensitivity) and lifetime at different temperatures, enabling calculation of the absorption and emission crosssections. Practical utility of the developed powders was demonstrated by a room temperature random lasing of iron doped Cd0.5Zn0.5Te powders over 5620-6020 nm spectral range pumped by a 2.94 μm radiation of a Q-switched Er:YAG laser. In summary, the following has been accomplished: (1) It was demonstrated that laser active Fe2+ doped ternary and quaternary II-VI materials can be produced by simple annealing of the commercially available binary powders omitting expensive and complicated crystal growth processes; (2) It is possible to effectively shift PL of Fe2+ in II-VI host materials towards shorter or longer wavelength by varying composition, type and amount of the second cation in ternary II-VI materials; (3) Major spectroscopic characteristics of Fe2+ doped II-VI ternary and quaternary compounds were obtained and their practical utility for mid-IR lasing demonstrated.

  11. II-VI Materials-Based High Performance Intersubband Devices

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind Pawan

    Mid-infrared (mid-IR) light is of vital technological importance because of its application in trace-gas absorption spectroscopy, imaging, free-space communication or infrared countermeasures. Thus the ability to generate and detect mid-IR light at low cost and preferably, at room temperature is of utmost importance. High performance quantum cascade (QC) lasers - mid-IR light sources based on optical transitions in thin quantum wells, and intersubband infrared detectors - namely the quantum well infrared photodetectors (QWIPs) and quantum cascade detectors (QCDs), have rapidly advanced, due to excellent material quality of III-V materials. In spite of this tremendous success, there lie challenges such as lack of efficient short-wavelength emitters or broadband detectors - challenges that arise from intrinsic materials properties. As a central theme in this thesis, we look at a new class of materials, the II-VI based ZnCdSe/ZnCdMgSe system, to close technological gaps and develop high performance infrared light sources and detectors in the entire mid-IR regime. To that end, we first demonstrate the flexibility that the combination of II-VI materials and band structure engineering allows by developing various QWIPs, QCDs and QC emitters at different wavelengths, not easily achieved by other materials. The performance of these first-of-their-kind detectors is already comparable to existing commercial solutions. To fully realize the potential of this new material system, we also developed a room-temperature broadband infrared detector detecting between 3 and 6 mum with record responsivity. With this technology, it is now possible to monolithically integrate high performance mid-IR lasers and detectors for on-chip applications. One of the challenges with all intersubband detectors is that they do not absorb normally incident light, like most conventional detectors. In order to make intersubband detectors attractive to commercial exploration, we develop a novel method to

  12. Fluorescence enhancement, blinking suppression, and gray states of individual semiconductor nanocrystals close to gold nanoparticles.

    PubMed

    Ma, Xuedan; Tan, Hua; Kipp, Tobias; Mews, Alf

    2010-10-13

    The optical properties of nanocrystals are drastically changed by the interaction with adjacent metal nanoparticles. By time-resolved photoluminescence spectroscopy, we investigate CdSe multishell nanocrystals coupled to self-assembled films of Au nanoparticles. The distance between emitter and metal is adjusted by coating the nanocrystals with silica shells. These NCs showed increased fluorescence intensity, a decreased fluorescence lifetime, strong blinking suppression, and fluorescence from gray states. These observations can be explained by the metal particle induced change of excitation and recombination rates.

  13. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  14. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  15. Hierarchial Junction Solar Cells Based on Hyper-Branched Semiconductor Nanocrystals

    DTIC Science & Technology

    2009-06-30

    that copper (I) sulfide and iron disulfide pyrite generated a much broader impact for photovoltaic solar cell applications. First, a simple low...pure phase iron disulfide pyrite nanocrystals with high purity through a surfactant-assisted hydrothermal reaction. These nanocrystals represent new...and iron disulfide pyrite (FeS2) for photovoltaic solar cell application. First, we demonstrated a simple low temperature solution phase synthesis of

  16. Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Horváth, Zs. J.; Basa, P.; Jászi, T.; Molnár, K. Z.; Pap, A. E.; Molnár, Gy.

    2013-03-01

    The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance-voltage (C-V) and memory window measurements and by simulation. Both the width of hysteresis of C-V characteristics and the injected charge exhibited exponential dependence on the charging voltage at moderate voltage values, while at high voltages the width of hysteresis of C-V characteristics and the injected charge exhibited saturation. The memory window for reference MNS structure without nanocrystals was wider than that for reference MNOS structures. The presence of nanocrystals enhanced the charging behavior of MNOS structures, but in MNS structures nanocrystals exhibited the opposite effect. The main conclusion is that the presence of nanocrystals or other deep levels close to the Si surface enhances the charge injection properties due to the increased tunneling probability, but nanocrystals or other deep levels located far from the Si surface in the nitride layer do not enhance, but even can degrade the charging behavior by the capture of charge carriers.

  17. Electronic grade and flexible semiconductor film employing oriented attachment of colloidal ligand-free PbS and PbSe nanocrystals at room temperature.

    PubMed

    Shanker, G Shiva; Swarnkar, Abhishek; Chatterjee, Arindom; Chakraborty, S; Phukan, Manabjyoti; Parveen, Naziya; Biswas, Kanishka; Nag, Angshuman

    2015-05-28

    Electronic grade semiconductor films have been obtained via the sintering of solution processed PbS and PbSe nanocrystals at room temperature. Prior attempts to achieve similar films required the sintering of nanocrystals at higher temperatures (>350 °C), which inhibits the processing of such films on a flexible polymer substrate, and it is also expensive. We reduced the sintering temperature by employing two important strategies: (i) use of ligand-free nanocrystals and (ii) oriented attachment of nanocrystals. Colloidal ligand-free PbS and PbSe nanocrystals were synthesized at 70 °C with high yield (∼70%). However, these nanocrystals start to agglomerate with time in formamide, and upon the removal of the solvation energy, nanocrystals undergo oriented attachment, forming larger elongated crystals. PbS and PbSe nanocrystal films made on both glass and flexible substrates at room temperature exhibit Ohmic behavior with optimum DC conductivities of 0.03 S m(-1) and 0.08 S m(-1), respectively. Mild annealing of the films at 150 °C increases the conductivity values to 1.1 S m(-1) and 137 S m(-1) for PbS and PbSe nanocrystal films, respectively. AC impedance was measured to distinguish the contributions from grain and grain boundaries to the charge transport mechanism. Charge transport properties remain similar after the repeated bending of the film on a flexible polymer substrate. Reasonably high thermoelectric Seebeck coefficients of 600 μV K(-1) and 335 μV K(-1) for PbS and PbSe nanocrystal pellets, respectively, were obtained at room temperature.

  18. Size- and Shape-dependent efficiency of PbSe nanocrystal and nanowire doped organic semiconductor photovoltaics

    NASA Astrophysics Data System (ADS)

    Li, Wenting; Murray, Christopher; Kagan, Cherie

    2009-03-01

    Hybrid solar cells based on nanocomposite organic semiconductors and IR sensitive PbSe nanocrystals (NCs) and nanowires (NWs) are fabricated and serve as a model system to test in PV devices. Wet chemical routes are used to synthesize PbSe NCs tunable in size, from 6 to 12nm in diameter, and in shape by tailoring the reaction temperature and selection of surfactants. PbSe NWs are also synthesized through oriented attachment in solution of NC building blocks to form straight, zigzag, helical, and branched NWs. We integrate PbSe NCs and NWs with the organic semiconductors P3HT and pentacene. We are able to fabricate organic-inorganic bulk heterojunctions with pentacene using a solution-processable precursor that is thermally converted to pentacene. We investigate the role of the organic semiconductor pentacene in the solar cell, both as a conductivity booster and as a more stable alternative to P3HT. We find that ligand exchange significantly increases photocurrent by replacing oleic acid ligands used in NC synthesis with shorter pyridine or octylamine ligands. We also report that tailoring the size and shape of the NCs and controlling the deposition and annealing conditions of the nanocomposites enhances the solar cell performance.

  19. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  20. Seed-induced growth of flower-like Au-Ni-ZnO metal-semiconductor hybrid nanocrystals for photocatalytic applications.

    PubMed

    Chen, Yuanzhi; Zeng, Deqian; Cortie, Michael B; Dowd, Annette; Guo, Huizhang; Wang, Junbao; Peng, Dong-Liang

    2015-03-25

    The combination of metal and semiconductor components in nanoscale to form a hybrid nanocrystal provides an important approach for achieving advanced functional materials with special optical, magnetic and photocatalytic functionalities. Here, a facile solution method is reported for the synthesis of Au-Ni-ZnO metal-semiconductor hybrid nanocrystals with a flower-like morphology and multifunctional properties. This synthetic strategy uses noble and magnetic metal Au@Ni nanocrystal seeds formed in situ to induce the heteroepitaxial growth of semiconducting ZnO nanopyramids onto the surface of metal cores. Evidence of epitaxial growth of ZnO{0001} facets on Ni {111} facets is observed on the heterojunction, even though there is a large lattice mismatch between the semiconducting and magnetic components. Adjustment of the amount of Au and Ni precursors can control the size and composition of the metal core, and consequently modify the surface plasmon resonance (SPR) and magnetic properties. Room-temperature superparamagnetic properties can be achieved by tuning the size of Ni core. The as-prepared Au-Ni-ZnO nanocrystals are strongly photocatalytic and can be separated and re-cycled by virtue of their magnetic properties. The simultaneous combination of plasmonic, semiconducting and magnetic components within a single hybrid nanocrystal furnishes it multifunctionalities that may find wide potential applications.

  1. Multi-crystalline II-VI based multijunction solar cells and modules

    DOEpatents

    Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

    2015-06-30

    Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

  2. Wurtzite Cu2ZnSnS4 nanocrystals: a novel quaternary semiconductor.

    PubMed

    Lu, Xiaotang; Zhuang, Zhongbin; Peng, Qing; Li, Yadong

    2011-03-21

    A new wurtzite phase Cu(2)ZnSnS(4) was discovered and the corresponding nanocrystals have been successfully synthesized. They have been characterized in detail and showed the photoelectric response, which demonstrated their potential in the application of photovoltaic devices.

  3. Cation coordination reactions on nanocrystals: surface/interface, doping control and advanced photocatalysis applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Zhang, Jiatao

    2016-10-01

    Abstract: Including the shape and size effect, the controllable doping, hetero-composite and surface/interface are the prerequisite of colloidal nanocrystals for exploring their optoelectronic properties, such as fluorescence, plasmon-exciton coupling, efficient electron/hole separation, and enhanced photocatalysis applications. By controlling soft acid-base coordination reactions between cation molecular complexes and colloidal nanocrystals, we showed that chemical thermodynamics could drive nanoscale monocrystalline growth of the semiconductor shell on metal nano-substrates and the substitutional heterovalent doping in semiconductor nanocrystals. We have demonstrated evolution of relative position of Au and II-VI semiconductor in Au-Semi from symmetric to asymmetric configuration, different phosphines initiated morphology engineering, oriented attachment of quantum dots into micrometer nanosheets with synergistic control of surface/interface and doing, which can further lead to fine tuning of plasmon-exciton coupling. Therefore, different hydrogen photocatalytic performance, Plasmon enhanced photocatalysis properties have been achieved further which lead to the fine tuning of plasmon-exciton coupling. Substitutional heterovalent doping here enables the tailoring of optical, electronic properties and photocatalysis applications of semiconductor nanocrystals because of electronic impurities (p-, n-type doping) control. References: (1) J. Gui, J. Zhang*, et al. Angew. Chem. Int. Ed. 2015, 54, 3683. (2) Q. Zhao, J. Zhang*, etc., Adv. Mater. 2014, 26, 1387. (3) J. Liu, Q. Zhao, S. G. Wang*, J. Zhang*, etc., Adv. Mater. 2015, 27-2753-2761. (4) H. Qian, J. Zhang*, etc., NPG Asia Mater. (2015) 7, e152. (5) M. Ji, M. Xu, etc., J. Zhang*, Adv. Mater. 2016, in proof. (6) S. Yu, J. T. Zhang, Y. Tang, M. Ouyang*, Nano Lett. 2015, 15, 6282-6288. (7) J. Zhang, Y. Tang, K. Lee and M. Ouyang*, Science 2010, 327, 1634. (8) J. Zhang, Y. Tang, K. Lee, M. Ouyang*, Nature 2010, 466

  4. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    DTIC Science & Technology

    2007-03-01

    nanocrystals……………………………………… 7 ZnSe and ZnS nanowires and nanorods, ZnO…………..……………………………… 9 Conjugated polymers in nanostructured composite materials...treatments and nanocrystal size. Compared to nanocrystalline Group II-VI compounds CdSe and CdS, Group III-V semiconductors, such as InP, GaP, InN, or...molecular level are being used to facilitate their integration into host matrices and devices. ZnSe and ZnS nanowires and nanorods, ZnO

  5. Crafting semiconductor organic-inorganic nanocomposites via placing conjugated polymers in intimate contact with nanocrystals for hybrid solar cells.

    PubMed

    Zhao, Lei; Lin, Zhiqun

    2012-08-22

    Semiconductor organic-inorganic hybrid solar cells incorporating conjugated polymers (CPs) and nanocrystals (NCs) offer the potential to deliver efficient energy conversion with low-cost fabrication. The CP-based photovoltaic devices are complimented by an extensive set of advantageous characteristics from CPs and NCs, such as lightweight, flexibility, and solution-processability of CPs, combined with high electron mobility and size-dependent optical properties of NCs. Recent research has witnessed rapid advances in an emerging field of directly tethering CPs on the NC surface to yield an intimately contacted CP-NC nanocomposite possessing a well-defined interface that markedly promotes the dispersion of NCs within the CP matrix, facilitates the photoinduced charge transfer between these two semiconductor components, and provides an effective platform for studying the interfacial charge separation and transport. In this Review, we aim to highlight the recent developments in CP-NC nanocomposite materials, critically examine the viable preparative strategies geared to craft intimate CP-NC nanocomposites and their photovoltaic performance in hybrid solar cells, and finally provide an outlook for future directions of this extraordinarily rich field.

  6. Tuning optoelectronic properties of small semiconductor nanocrystals through surface ligand chemistry

    NASA Astrophysics Data System (ADS)

    Lawrence, Katie N.

    Semiconductor nanocrystals (SNCs) are a class of material with one dimension <100 nm, which display size, shape, and composition dependent photophysical (absorption and emission) properties. Ultrasmall SNCs are a special class of SNCs whose diameter is <3.0 nm and are strongly quantum confined leading to a high surface to volume ratio. Therefore, their electronic and photophysical properties are fundamentally dictated by their surface chemistry, and as such, even a minute variation of the surface ligation can have a colossal impact on these properties. Since the development of the hot injection-method by Bawendi et al., the synthetic methods of SNCs have evolved from high-temperature, highly toxic precursors to low-temperature, relatively benign precursors over the last 25 years. Unfortunately, optimization of their synthetic methods by appropriate surface ligation is still deficient. The deficiency lies in the incomplete or inappropriate surface passivation during the synthesis and/or post-synthetic modification procedure, which due to the high surface to volume ratio of ultrasmall SNCs, is a significant problem. Currently, direct synthetic methods produce SNCs that are either soluble in an aqueous media or soluble in organic solvents therefore limiting their applicability. In addition, use of insulating ligands hinder SNCs' transport properties and thus their potential application in solid state devices. Appropriate choice of surface ligation can provide 1) solubility, 2) stability, and 3) facilitate exciton delocalization. In this dissertation, the effects of appropriate surface ligation on strongly quantum confined ultrasmall SNCs was investigated. Due to their high surface to volume ratio, we are able to highly control their optical and electronic properties through surface ligand modification. Throughout this dissertation, we utilized a variety of ligands (e.g. oleylamine, cadmium benzoate, and PEGn-thiolate) in order to change the solubility of the SNC as

  7. Semiconductor nanocrystals functionalized with antimony telluride zintl ions for nanostructured thermoelectrics.

    PubMed

    Kovalenko, Maksym V; Spokoyny, Boris; Lee, Jong-Soo; Scheele, Marcus; Weber, Andrew; Perera, Susanthri; Landry, Daniel; Talapin, Dmitri V

    2010-05-19

    The energy efficiency of heat engines could be improved by the partial recovery of waste heat using thermoelectric (TE) generators. We show the possibility of designing nanostructured TE materials using colloidal inorganic nanocrystals functionalized with molecular antimony telluride complexes belonging to the family of Zintl ions. The unique advantage of using Zintl ions as the nanocrystal surface ligands is the possibility to convert them into crystalline metal chalcogenides, thus linking individual nanobuilding blocks into a macroscopic assembly of electronically coupled functional modules. This approach allows preserving the benefits of nanostructuring and quantum confinement while enabling facile charge transport through the interparticle boundaries. A developed methodology was applied for solution-based fabrication of nanostructured n- and p-type Bi(2-x)Sb(x)Te(3) alloys with tunable composition and PbTe-Sb(2)Te(3) nanocomposites with controlled grain size. Characterization of the TE properties of these materials showed that their Seebeck coefficients, electrical and thermal conductivities, and ZT values compared favorably with those of previously reported solution-processed TE materials.

  8. Luminescence properties of ZnS:Cu, Eu semiconductor nanocrystals synthesized by a hydrothermal process

    NASA Astrophysics Data System (ADS)

    Xin, Mei; Hu, Li-Zhong

    2013-08-01

    ZnS:Cu, Eu nanocrystals with an average diameter of ~ 80 nm are synthesized using a hydrothermal approach at 200 °C. The photoluminescence (PL) properties of the ZnS:Cu, Eu nanocrystals before and after annealing, as well as the doping form of Eu, are studied. The as-synthesized samples are characterized by X-ray diffraction, scanning electron microscopy, inductively coupled plasma-atomic emission spectrometry, and the excitation and emission spectra (PL). The results show that both Cu and Eu are indeed incorporated into the ZnS matrix. Compared with the PL spectrum of the Cu mono-doped sample, the PL emission intensity of the Cu and Eu-codoped sample increases and a peak appears at 516 nm, indicating that Eu3+ ions, which act as an impurity compensator and activator, are incorporated into the ZnS matrix, forming a donor level. Compared with the unannealed sample, the annealed one has an increased PL emission intensity and the peak position has a blue shift of 56 nm from 516 nm to 460 nm, which means that Eu3+ ions reduce to Eu2+ ions, thereby leading to the appearance of Eu2+ characteristic emission and generating effective host-to-Eu2+ energy transfer. The results indicate the potential applications of ZnS:Cu, Eu nanoparticles in optoelectronic devices.

  9. Robust photogeneration of H2 in water using semiconductor nanocrystals and a nickel catalyst.

    PubMed

    Han, Zhiji; Qiu, Fen; Eisenberg, Richard; Holland, Patrick L; Krauss, Todd D

    2012-12-07

    Homogeneous systems for light-driven reduction of protons to H(2) typically suffer from short lifetimes because of decomposition of the light-absorbing molecule. We report a robust and highly active system for solar hydrogen generation in water that uses CdSe nanocrystals capped with dihydrolipoic acid (DHLA) as the light absorber and a soluble Ni(2+)-DHLA catalyst for proton reduction with ascorbic acid as an electron donor at pH = 4.5, which gives >600,000 turnovers. Under appropriate conditions, the precious-metal-free system has undiminished activity for at least 360 hours under illumination at 520 nanometers and achieves quantum yields in water of over 36%.

  10. The formation of molecular aggregates of sulfophthalocyanine in complexes with semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Dadadzhanov, D. R.; Martynenko, I. V.; Orlova, A. O.; Maslov, V. G.; Fedorov, A. V.; Baranov, A. V.

    2015-11-01

    In this study, complexes of CdSe/ZnS quantum dots and quantum rods with sulfophthalocyanine molecules have been formed. Analysis of spectral and luminescent properties of solutions of the complexes has revealed that an increase in the number of molecules per one nanocrystal in a mixed solution results in a noticeable decrease in the intensity of the luminescence of the quantum dots and quantum rods. In addition, it has been found that, upon an increase in the concentration of sulfophthalocyanine molecules, the absorption spectra of the samples in the region of their first absorption band have signs of formation of nonluminiscent aggregates of sulfophthalocyanine molecules. Analysis of the absorption spectra of the mixed solutions has made it possible to demonstrate that the complexes with the quantum rods have a content of the sulfophthalocyanine aggregates significantly lower than the complexes with the quantum dots.

  11. Ab initio study of II-(VI)2 dichalcogenides

    NASA Astrophysics Data System (ADS)

    Olsson, P.; Vidal, J.; Lincot, D.

    2011-10-01

    The structural stabilities of the (Zn,Cd)(S,Se,Te)2 dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe2 pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications.

  12. Carbon-shell-decorated p-semiconductor PbMoO4 nanocrystals for efficient and stable photocathode of photoelectrochemical water reduction

    NASA Astrophysics Data System (ADS)

    Wang, Ligang; Tang, Hanqin; Tian, Yang

    2016-07-01

    Photoelectrochemical (PEC) water splitting using semiconductors is a promising method for the future scalable production of renewable hydrogen fuels. The critical issues in PEC water splitting include the development of the photoelectrode materials with high efficiency and long-term stability, especially for p-type semiconductor photocathodes. Herein, we report the use of citric acid (CA) pyrolysis to prepare carbon-shell-decorated PbMoO4 (C@PbMoO4) nanocrystals via a simple solvothermal method. Different carbon shell thicknesses below 10 nm were generated by varying the amount of CA in the precursor solution. In contrast, without using CA, bare PbMoO4 nanocrystals were obtained. The PEC experiments showed that 2-nm carbon shell could preferably improve the water splitting performance of PbMoO4: the photocurrent density of 2-nm C@PbMoO4 is nearly 2-fold high as that of bare PbMoO4 at 0 V versus reversible hydrogen electrode (RHE). The surface charge transfer efficiency of 2-nm C@PbMoO4 in the PEC process was tested to increase from 83% to 90.4%, the charge separation efficiency enhanced 56%, and the PEC stability also greatly increased compared to those of the bare PbMoO4 nanocrystals. This strategy could be applied to other p-type semiconducting photocathodes for low-cost solar-fuel-generation devices.

  13. Modeling of mechanical properties of II-VI materials

    NASA Technical Reports Server (NTRS)

    Sher, A.; Berding, M. A.; Van Schilfgaarde, M.; Chen, A.-B.; Patrick, R.

    1988-01-01

    This paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).

  14. How Robust are Semiconductor Nanorods? Investigating the Stability and Chemical Decomposition Pathways of Photoactive Nanocrystals

    SciTech Connect

    Reichert, Malinda D; Lin, Chia-Cheng; Vela, Javier

    2014-07-08

    Anisotropic II–VI semiconductor nanostructures are important photoactive materials for various energy conversion and optical applications. However, aside from the many available surface chemistry studies and from their ubiquitous photodegradation under continuous illumination, the general chemical reactivity and thermal stability (phase and shape transformations) of these materials are poorly understood. Using CdSe and CdS nanorods as model systems, we have investigated the behavior of II–VI semiconductor nanorods against various conditions of extreme chemical and physical stress (acids, bases, oxidants, reductants, and heat). CdSe nanorods react rapidly with acids, becoming oxidized to Se or SeO2. In contrast, CdSe nanorods remain mostly unreactive when treated with bases or strong oxidants, although bases do partially etch the tips of the nanorods (along their axis). Roasting (heating in air) of CdSe nanorods results in rock-salt CdO, but neither CdSe nor CdO is easily reduced by hydrogen (H2). Another reductant, n-BuLi, reduces CdSe nanorods to metallic Cd. Variable temperature X-ray diffraction experiments show that axial annealing and selective axial melting of the nanorods precede particle coalescence. Furthermore, thermal analysis shows that the axial melting of II–VI nanorods is a ligand-dependent process. In agreement with chemical reactivity and thermal stability observations, silica-coating experiments show that the sharpest (most curved) II–VI surfaces are most active against heterogeneous nucleation of a silica shell. These results provide valuable insights into the fate and possible ways to enhance the stability and improve the use of II–VI semiconductor nanostructures in the fields of optics, magnetism, and energy conversion.

  15. Use of semiconductor nanocrystals to encode microbeads for multiplexed analysis of biological samples

    NASA Astrophysics Data System (ADS)

    Berestovoy, Mikhail A.; Bilan, Regina S.; Krivenkov, Victor; Nabiev, Igor; Sukhanova, Alyona

    2017-01-01

    Microbeads encoded with semiconductor quantum dots (QDs) are suitable tools for multiplexed analyses of various biological markers using flow cytometry. We have prepared a panel of microbeads encoded with QDs of different colors emitting with different luminescence intensities using the layer-by-layer deposition technique, which consists in layering of alternately charged polyelectrolytes and negatively charged QDs onto the surface of microbeads. This method allows QDs to be separated with one or several polymer layers in order to prevent Förster resonance energy transfer (FRET) and the resultant quenching of QD fluorescence in multicolor microbeads.

  16. Application of quaternary phase diagrams to compound semiconductor processing. Progress report, April 1, 1988--December 31, 1988

    SciTech Connect

    Schwartzman, A.

    1988-12-31

    This paper considers the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Examples, listed in a table, include semiconductor/insulator/semiconductor (SIS) layered structures, II-VI/II-VI and III-V/II-VI epitaxial heterojunctions and oxidation of ternary compounds. Solid solubility is taken into account for quaternary phase diagrams of semiconductor systems. Using free energies of formation, a method to calculate the quaternary phase diagrams was developed. The Ga-As-II-VI and Cd-Te-Zn-O phase diagrams are reviewed as examples of quaternary phase diagrams without and with solid solubility.

  17. 77 FR 36579 - II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased Workers From Adecco, Carol...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-19

    ... Employment and Training Administration II-VI, Inc., Infrared Optics-Saxonburg Division, Saxonburg, PA; Leased...., Infrared Optics-Saxonburg Division, Saxonburg, PA; Notice of Revised Determination on Reconsideration The... period. The determination was applicable to workers and former workers of II-VI, Inc., Infrared...

  18. Alloyed Mn-Cu-In-S nanocrystals: a new type of diluted magnetic semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Liu, Qinghui; Deng, Ruiping; Ji, Xiangling; Pan, Daocheng

    2012-06-01

    A new type of Mn-Cu-In-S diluted magnetic semiconductor quantum dots was synthesized and reported for the first time. The quantum dots, with no highly toxic elements, not only show the same classic diluted magnetic behavior as Mn-doped CdSe, but also exhibit tunable luminescent properties in a relatively large window from 542 to 648 nm. An absolute photoluminescence quantum yield up to 20% was obtained after the shell growth of ZnS. This kind of magnetic/luminescent bi-functional Mn-Cu-In-S/ZnS core/shell quantum dot might serve as promising nanoprobes for use in dual-mode optical and magnetic resonance imaging techniques.

  19. Photoswitchable semiconductor nanocrystals with self-regulating photochromic Förster resonance energy transfer acceptors

    NASA Astrophysics Data System (ADS)

    Díaz, Sebastián A.; Gillanders, Florencia; Jares-Erijman, Elizabeth A.; Jovin, Thomas M.

    2015-01-01

    Photoswitchable molecules and nanoparticles constitute superior biosensors for a wide range of industrial, research and biomedical applications. Rendered reversible by spontaneous or deterministic means, such probes facilitate many of the techniques in fluorescence microscopy that surpass the optical resolution dictated by diffraction. Here we have devised a family of photoswitchable quantum dots (psQDs) in which the semiconductor core functions as a fluorescence donor in Förster resonance energy transfer (FRET), and multiple photochromic diheteroarylethene groups function as acceptors upon activation by ultraviolet light. The QDs were coated with a polymer bearing photochromic groups attached via linkers of different length. Despite the resulting nominal differences in donor-acceptor separation and anticipated FRET efficiencies, the maximum quenching of all psQD preparations was 38±2%. This result was attributable to the large ultraviolet absorption cross-section of the QDs, leading to preferential cycloreversion of photochromic groups situated closer to the nanoparticle surface and/or with a more favourable orientation.

  20. Photoswitchable semiconductor nanocrystals with self-regulating photochromic Förster resonance energy transfer acceptors.

    PubMed

    Díaz, Sebastián A; Gillanders, Florencia; Jares-Erijman, Elizabeth A; Jovin, Thomas M

    2015-01-16

    Photoswitchable molecules and nanoparticles constitute superior biosensors for a wide range of industrial, research and biomedical applications. Rendered reversible by spontaneous or deterministic means, such probes facilitate many of the techniques in fluorescence microscopy that surpass the optical resolution dictated by diffraction. Here we have devised a family of photoswitchable quantum dots (psQDs) in which the semiconductor core functions as a fluorescence donor in Förster resonance energy transfer (FRET), and multiple photochromic diheteroarylethene groups function as acceptors upon activation by ultraviolet light. The QDs were coated with a polymer bearing photochromic groups attached via linkers of different length. Despite the resulting nominal differences in donor-acceptor separation and anticipated FRET efficiencies, the maximum quenching of all psQD preparations was 38±2%. This result was attributable to the large ultraviolet absorption cross-section of the QDs, leading to preferential cycloreversion of photochromic groups situated closer to the nanoparticle surface and/or with a more favourable orientation.

  1. Computational Analysis of Core/Shell-like Structure Formation through Equilibrium Segregation in Ternary Compound Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Pandey, Sumeet C.; Singh, Tejinder; Mountziaris, Triantafillos J.; Maroudas, Dimitrios

    2010-03-01

    We present a computational analysis of equilibrium surface segregation in nanocrystals of InxGa1-xAs, ZnSe1-xTex, and ZnSe1-xSx. The analysis is based on coupled compositional, structural, and strain relaxation employing Monte Carlo and conjugate-gradient methods according to proper parameterizations within the valence-force-field (VFF) description. The VFF parameterizations are validated by comparisons of their segregation energy predictions with first-principles density functional theory (DFT) calculations. We report results for the equilibrium concentration distributions in the nanocrystals as a function of the compositional parameter x and nanocrystal size; the nanocrystal morphologies are polyhedral with distinct facets of low-index surface orientation as determined from DFT calculations of equilibrium crystal shapes. The results identify the particle-size and composition ranges that allow for assembly of core/shell-like nanocrystal structures with increased band-gap tunability.

  2. Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

    2004-03-01

    The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

  3. Mesoporous silica beads embedded with semiconductor quantum dots and iron oxide nanocrystals: dual-function microcarriers for optical encoding and magnetic separation.

    PubMed

    Sathe, Tushar R; Agrawal, Amit; Nie, Shuming

    2006-08-15

    Mesoporous beads are promising materials for embedding functional nanoparticles because of their nanometer-sized pores and large surface areas. Here we report the development of silica microbeads embedded with both semiconductor quantum dots (QD) and iron oxide (Fe3O4) nanocrystals as a new class of dual-function carriers for optical encoding and magnetic separation. The embedding (doping) process is carried out by either simultaneous or sequential addition of quantum dots and iron oxide (Fe3O4) nanocrystals in solution. The doping process is fast and quantitative, but the incorporated iron oxide strongly attenuates the signal intensity of QD fluorescence. We find that this attenuation is not due to conventional fluorescence quenching but is caused by the broad optical absorption spectrum of mixed-valence Fe3O4. For improved biocompatibility and reduced nonspecific binding, the encoded beads are further coated with amphiphilic polymers such as octylamine poly(acrylic acid). The results indicate that the polymer-coated beads are well suited for target capturing and enrichment, yielding magnetic separation efficiencies higher than 99%. By combining the multiplexing capability of QDs with the superparamagnetic properties of iron oxide nanocrystals, this class of encoded beads is expected to find broad applications in high-throughput and multiplexed biomolecular assays.

  4. Loosening quantum confinement: observation of real conductivity caused by hole polarons in semiconductor nanocrystals smaller than the Bohr radius.

    PubMed

    Ulbricht, Ronald; Pijpers, Joep J H; Groeneveld, Esther; Koole, Rolf; Donega, Celso de Mello; Vanmaekelbergh, Daniel; Delerue, Christophe; Allan, Guy; Bonn, Mischa

    2012-09-12

    We report on the gradual evolution of the conductivity of spherical CdTe nanocrystals of increasing size from the regime of strong quantum confinement with truly discrete energy levels to the regime of weak confinement with closely spaced hole states. We use the high-frequency (terahertz) real and imaginary conductivities of optically injected carriers in the nanocrystals to report on the degree of quantum confinement. For the smaller CdTe nanocrystals (3 nm < radius < 5 nm), the complex terahertz conductivity is purely imaginary. For nanocrystals with radii exceeding 5 nm, we observe the onset of real conductivity, which is attributed to the increasingly smaller separation between the hole states. Remarkably, this onset occurs for a nanocrystal radius significantly smaller than the bulk exciton Bohr radius a(B) ∼ 7 nm and cannot be explained by purely electronic transitions between hole states, as evidenced by tight-binding calculations. The real-valued conductivity observed in the larger nanocrystals can be explained by the emergence of mixed carrier-phonon, that is, polaron, states due to hole transitions that become resonant with, and couple strongly to, optical phonon modes for larger QDs. These polaron states possess larger oscillator strengths and broader absorption, and thereby give rise to enhanced real conductivity within the nanocrystals despite the confinement.

  5. Correlation of Schottky constants with interatomic distances of selected I-VII and II-VI compounds

    NASA Astrophysics Data System (ADS)

    Wiedemeier, Heribert

    2013-10-01

    The observed linear (Na-, K-halides) and near-linear (Mg-, Sr-, Zn-, Cd-, and Hg-chalcogenides) dependences of Schottky constants on reciprocal interatomic distances yield the relation logKS=((ss1/T)+is)1/d(A-B)+(si1/T)+ii, where KS is the product of metal and non-metal thermal equilibrium vacancy concentrations, and ss, is, si and ii are the group specific slope and intercept values obtained from an extended analysis of the above log KS versus 1/d(A-B) data. The previously reported linear dependences of log KS on the Born-Haber lattice energies [1] are the basis for combining the earlier results [1] with the Born-Mayer lattice energy equation to yield a new thermodynamic relationship, namely logKS=-(2.303(c(B-M)/d(A-B)-Ie), where c(B-M) is the product of the constants of the Born-Mayer equation and Ie is the metal ionization energy of the above compounds. These results establish a correlation between point defect concentrations and basic thermodynamic, coulombic, and structural solid state properties for selected I-VII and II-VI semiconductor materials.

  6. Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds

    NASA Astrophysics Data System (ADS)

    Lashkarev, G. V.; Sichkovskiyi, V. I.; Radchenko, M. V.; Karpina, V. A.; Butorin, P. E.; Dmitriev, O. I.; Lazorenko, V. I.; Slyn'ko, E. I.; Lytvyn, P. M.; Jakiela, R.; Knoff, W.; Story, T.; Aleshkevych, P.

    2009-01-01

    Chemical and phase composition, magnetic susceptibility, SIMS, magnetic force microscopy, and neutron diffraction data for Ge1-x-ySnxMnyTe, InSe⟨Mn⟩, and ZnO⟨Co, Mn⟩ single crystals are investigated over a wide range of temperatures and magnetic fields. For Ge1-x-ySnxMnyTe the existence of ferromagnetic (FM) ordering with a Curie temperature TC˜50K, due to an indirect exchange interaction between Mn ions via the degenerate hole gas, is established. It is shown that at T <50K the ferromagnetic regions of the crystal form a spin-glass phase. In InSe⟨Mn⟩ it is found that hysteresis loops of the magnetic moment M(H ) are observed up to 350K. They attest to the existence of ferromagnetic ordering, which is apparently due to ferromagnetic clusters in which a superexchange of the Mn ions via the Se anions is proposed, and to an indirect interaction via the 2D electron gas. At T <70K a period doubling of the magnetic sublattice of α-MnSe second-phase inclusions is observed, and their distribution in the layered structure of the InSe⟨Mn⟩ host matrix has a regular character, forming a self-organized FM/AFM superlattice. In ZnO⟨Co, Mn⟩ the temperature dependence of M obeys a Curie law. When the solubility limit of Co in ZnO is exceeded, hysteresis loops are observed as a consequence of the appearance of a ferromagnetic second phase. In ZnO⟨Mn⟩ samples and also in some ZnO⟨Co⟩ samples with Co content below the solubility limit an antiferromagnetic (AFM) interaction takes place.

  7. Theoretical Study of Defect Signatures in III-V and II-VI Semiconductors

    DTIC Science & Technology

    2006-03-01

    calculated an acetylene molecule sH-C-C-Hd and found that indeed if we compress the C-C bond by 0.02 Å, both of the C-H bonds will increase, as expected, by...example, when NO þ ðNOÞO ! ðN2ÞO þOO, one less oxy - gen site is disturbed by the impurities after the reaction. In the right panel of Fig. 4, the

  8. Thermophysical Properties of Te-based II-VI Semiconductors: Reduced Algorithms for Thermal Diffusivity Determination

    NASA Technical Reports Server (NTRS)

    Banish, R. Michael; Brantschen, Segolene; Pourpoint, Timothee L.; Wessling, Francis; Sekerka, Robert F.

    2003-01-01

    This paper presents methodologies for measuring the thermal diffusivity using the difference between temperatures measured at two, essentially independent, locations. A heat pulse is applied for an arbitrary time to one region of the sample; either the inner core or the outer wall. Temperature changes are then monitored versus time. The thermal diffusivity is calculated from the temperature difference versus time. No initial conditions are used directly in the final results.

  9. Band gap engineering of Zn based II-VI semiconductors through uniaxial strain

    NASA Astrophysics Data System (ADS)

    Yadav, Satyesh; Ramprasad, Rampi

    2012-02-01

    The electronic structure of bulk wurtzitic ZnX (X=O, S, Se, and Te) under uniaxial strain along the [0001] direction is investigated using hybrid density functional theory calculations and many-body perturbation theory. It is found that uniaxial tensile and large compressive strains decrease the band gap, similar to what has been predicted by semilocal density functional theory (DFT) calculations [Yadav et. al, Phys. Rev. B, 81, 144120 (2010)]. Moreover, the change in the band gap under uniaxial strains predicted by semilocal DFT is in good quantitative agreement with the present results at all strains considered, thereby bringing a measure of redemption to conventional (semi)local DFT descriptions of the electronic structure of at least this class of insulators. The present results have important implications for band gap engineering through strain, especially for complex systems containing a large number of atoms (e.g., nanowires) for which higher-level calculations may be too computationally intensive.

  10. Time-resolved x-ray excited optical luminescence studies of II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Rosenberg, R. A.; Lee, S.-T.; Kim, P.-S. G.

    2005-03-01

    Due to quantum confinement effects nanostructures often exhibit unique and intriguing fluorescence behavior. X-ray excited optical luminescence (XEOL) provides the capability to chemically map the sites responsible for producing low energy (1-6 eV) fluorescence. By taking advantage of the time structure of the x-ray pulses at the Advanced Photon Source, it also possible to determine the dynamic behavior of the states involved in the luminescence. In this presentation we show how this technique can be utilized to understand the XEOL from ZnS, ZnTe, and ZnO nanowires. Time-gated optical spectra show that the high-energy, band-edge states have a short lifetime while the lower-energy, deep-levels have a relatively long lifetime. X-ray excitation curves are obtained using the relevant optical photons as signals and compared to the corresponding x-ray absorption spectra. We will show how these results enable us to determine the local structure of the luminescent site(s).

  11. Electron-nuclei spin dynamics in II-VI semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Le Gall, C.; Brunetti, A.; Boukari, H.; Besombes, L.

    2012-05-01

    We report on the dynamics of optically induced nuclear spin polarization in individual CdTe/ZnTe quantum dots loaded with one electron by modulation doping. The fine structure of the hot trion (charged exciton X- with an electron in the P shell) is identified in photoluminescence excitation spectra. A negative polarization rate of the photoluminescence, optical pumping of the resident electron, and the built up of dynamic nuclear spin polarization (DNSP) are observed in time-resolved optical pumping experiments when the quantum dot is excited at higher energy than the hot trion triplet state. The time and magnetic field dependence of the polarization rate of the X- emission allows us to probe the dynamics of formation of the DNSP in the optical pumping regime. We demonstrate using time-resolved measurements that the creation of a DNSP at B=0 T efficiently prevents longitudinal spin relaxation of the electron caused by fluctuations of the nuclear spin bath. The DNSP is built in the microsecond range at high excitation intensity. A relaxation time of the DNSP in about 10 μm is observed at B=0 T and significantly increases under a magnetic field of a few milli-Tesla. We discuss mechanisms responsible for the fast initialization and relaxation of the diluted nuclear spins in this system.

  12. Device Processing of II-VI Semiconductor Films and Quantum Well Structures

    DTIC Science & Technology

    1991-03-07

    The objectives of this program is to develop a device processing technology necessary for proper utilization of Hg-based heterostructures and...superlattices in device applications. The specific focus or long term goal guiding the direction of the program is to develop the devices and processing ... technology required for an IR focal plane integrated with on-board signal processing electronics.

  13. Very High Quality Crystals of Wide-Gap II-VI Semiconductors: What for?

    DTIC Science & Technology

    2001-01-01

    grain boundaries and twinning. If the lifetime is to be high - the concentration of defects and residual impurities acting as recombination centers must...structures based on Hg).8Cdo.2Te. The substrate crystals must be single crystals with no grain boundaries and twins. Definite crystallografic orientation is...scattering of light must be avoided, the single crystals of Cdl.xMnxTe must have no grain boundaries and twins, and very small amount of any precipitates

  14. Assessment of subsurface damage in polished II-VI semiconductors by ion channeling

    NASA Astrophysics Data System (ADS)

    Lucca, D. A.; Wetteland, C. J.; Misra, A.; Klopfstein, M. J.; Nastasi, M.; Maggiore, C. J.; Tesmer, J. R.

    2004-06-01

    Surfaces of bulk single crystal CdS, ZnSe and ZnO were prepared by mechanical polishing with 1 and 1/4 μm diamond abrasive slurries and by chemomechanical polishing with sodium hypochlorite:colloidal silica. Etched surfaces, indicative of original crystalline quality were also prepared. Near surface damage was investigated by ion channeling with He ions using incident beam energies of 2 and 5 MeV and detector positions of 75° and 13°. Damage depths were found to be significantly higher for ZnSe when compared to CdS or ZnO. The chemomechanical polishing process was seen to introduce small but measurable subsurface damage in CdS and ZnSe. However, channeling was unable to detect any damage for the chemomechanically polished ZnO surfaces, a result which was supported by cross-section transmission electron microscopy (XTEM). The presence of damage beyond that identified by the surface peak for the mechanically polished ZnSe surfaces was indicated by the dechanneling behavior below the surface.

  15. Charge separation and transport in conjugated-polymer/semiconductor-nanocrystal composites studied by photoluminescence quenching and photoconductivity

    SciTech Connect

    Greenham, N.C.; Peng, X.; Alivisatos, A.P.

    1996-12-01

    We study the processes of charge separation and transport in composite materials formed by mixing cadmium selenide or cadmium sulfide nanocrystals with the conjugated polymer poly(2-methoxy,5-(2{prime}-ethyl)-hexyloxy-{ital p}-phenylenevinylene) (MEH-PPV). When the surface of the nanocrystals is treated so as to remove the surface ligand, we find that the polymer photoluminescence is quenched, consistent with rapid charge separation at the polymer/nanocrystal interface. Transmission electron microscopy of these quantum-dot/conjugated-polymer composites shows clear evidence for phase segregation with length scales in the range 10{endash}200 nm, providing a large area of interface for charge separation to occur. Thin-film photovoltaic devices using the composite materials show quantum efficiencies that are significantly improved over those for pure polymer devices, consistent with improved charge separation. At high concentrations of nanocrystals, where both the nanocrystal and polymer components provide continuous pathways to the electrodes, we find quantum efficiencies of up to 12{percent}. We describe a simple model to explain the recombination in these devices, and show how the absorption, charge separation, and transport properties of the composites can be controlled by changing the size, material, and surface ligands of the nanocrystals. {copyright} {ital 1996 The American Physical Society.}

  16. Silicon nanocrystal inks, films, and methods

    DOEpatents

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  17. Use of a ZnTe:N/ZnO: A1 bilayer in thin-flim, multi-junction II-VI solar cells.

    NASA Astrophysics Data System (ADS)

    Rich, Geoffrey

    2002-03-01

    Development of a low-cost, thin-film tandem solar cell structure utilizing II-VI compound semiconductors is described. The structure consists of a CdS/CdTe top cell to which a bilayer of ZnTe:N/ZnO:Al is applied, subsequently bonded to a thin-film or crystalline bottom cell. The bilayer forms a back contact to the top cell, with an appropriate optical transmission and lateral conductivity characteristic for use in a four-terminal tandem device. Previous work at the University of Toledo has shown that ZnTe can be effectively doped by reactive sputtering in nitrogen, and demonstration of ZnTe:N as a component of a back contact to CdS/CdTe heterojunctions has been demonstrated [1]. The addition of a ZnO:Al layer provides the necessary lateral conductivity required by a four-terminal tandem solar cell design. Test structures consisting of Al/ZnTe:N/ZnO:Al/Al, deposited on glass by magnetron sputtering, are characterized optically and electrically. The ZnTe:N/ZnO:Al bilayer is applied to thin-film CdS/CdTe heterojunctions deposited by rapid, low-cost techniques (provided by First Solar, LLC). With the addition of a metallic grid, functioning top cell structures are created and measured. By bonding a bottom cell to this structure, a complete dual-junction, four-terminal device is constructed and demonstrated. [1] J. Drayton, A. Gupta, K. Makhratchev, K. Price, R. Bohn, and A. Compaan, Mat. Res. Soc. Symp. Proc. 668, “II-VI Compound Semiconductor Photovoltaic Materials,” ed. by R Noufi, R. W. Birkmire, D. Lincot, H. W. Schock.

  18. CDTE CERAMICS BASED ON COMPRESSION OF NANOCRYSTAL POWDER.

    SciTech Connect

    KOLESNIKOV, N.N.; BORISENKO, E.B.; BORISENKO, D.N.; JAMES, R.B.; KVEDER, V.V.; GARTMAN, V.K.; GNESIN, G.A.

    2005-07-01

    Wide-gap II-VI semiconductor crystalline materials are conventionally used in laser optics, light emitting devices, and nuclear detectors. The advances made in the studies of nanocrystals and in the associated technologies have created great interest in the design of semiconductor devices based on these new materials. The objectives of this work are to study the microstructure and the properties of the new material produced through CdTe nanopowder compression and to consider the prospects of its use in the design of ionizing-radiation detectors and in laser optics. Highly dense material produced of 7-10 nm CdTe particles under pressure of 20-600 MPa at temperatures from 20 to 200 C was analyzed using x-ray diffractometry, texture analysis; light and scanning electron microscopy, and optical spectrophotometry. The mechanical and electrical properties of the compacted material were measured and compared with similar characteristics of the conventionally grown single crystals. Phase transformation from metastable to stable crystal structure caused by deformation was observed in the material. Sharp crystallographic texture {l_brace}001{r_brace} that apparently affects specific mechanical, electrical and optical characteristics of compacted CdTe was observed. The specific resistivity calculated from the linear current-voltage characteristics was about 10{sup 10} Ohm x cm, which is a promisingly high value regarding the possibility of using this material in the design of semiconductor radiation detectors. The optical spectra show that the transmittance in the infrared region is sufficient to consider the prospects of possible applications of CdTe ceramics in laser optics.

  19. Aqueous oxidation reaction enabled layer-by-layer corrosion of semiconductor nanoplates into single-crystalline 2D nanocrystals with single layer accuracy and ionic surface capping.

    PubMed

    Ji, Muwei; Xu, Meng; Zhang, Jun; Liu, Jiajia; Zhang, Jiatao

    2016-02-25

    A controllable aqueous oxidation reaction enabled layer-by-layer corrosion has been proposed to prepare high-quality two-dimensional (2D) semiconductor nanocrystals with single layer accuracy and well-retained hexagonal shapes. The appropriate oxidizing agent, such as H2O2, Fe(NO3)3, and HNO3, could not only corrode the layered-crystalline-structured Bi2Te3 nanoplates layer-by-layer to be a single quintuple layer, but also replace the organic barriers to be ionic ligands on the surface synergistically. AFM analysis was used to confirm the layer-by-layer exfoliation from the side to the center. Together with precise XRD, LRTEM and HRTEM characterizations, the controllable oxidation reaction enabled aqueous layer-by-layer corrosion mechanism has been studied.

  20. Linearly arranged polytypic CZTSSe nanocrystals

    PubMed Central

    Fan, Feng-Jia; Wu, Liang; Gong, Ming; Chen, Shi You; Liu, Guang Yao; Yao, Hong-Bin; Liang, Hai-Wei; Wang, Yi-Xiu; Yu, Shu-Hong

    2012-01-01

    Even colloidal polytypic nanostructures show promising future in band-gap tuning and alignment, researches on them have been much less reported than the standard nano-heterostructures because of the difficulties involved in synthesis. Up to now, controlled synthesis of colloidal polytypic nanocrsytals has been only realized in II-VI tetrapod and octopod nanocrystals with branched configurations. Herein, we report a colloidal approach for synthesizing non-branched but linearly arranged polytypic I2-II-IV-VI4 nanocrystals, with a focus on polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystals. Each synthesized polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystal is consisted of two zinc blende-derived ends and one wurtzite-derived center part. The formation mechanism has been studied and the phase composition can be tuned through adjusting the reaction temperature, which brings a new band-gap tuning approach to Cu2ZnSnSxSe4-x nanocrystals. PMID:23233871

  1. Quantum Chemical Calculations of the Influence of Anchor-Cum-Spacer Groups on Femtosecond Electron Transfer Times in Dye-Sensitized Semiconductor Nanocrystals.

    PubMed

    Persson, P; Lundqvist, M J; Ernstorfer, R; Goddard, W A; Willig, F

    2006-03-01

    Electronic properties of dye-sensitized semiconductor nanocrystals, consisting of perylene (Pe) chromophores attached to 2 nm TiO2 nanocrystals via different anchor-cum-spacer groups, have been studied theoretically using density functional theory (DFT) cluster calculations. Approximate effective electronic coupling strengths for the heterogeneous electron-transfer interaction have been extracted from the calculated electronic structures and are used to estimate femtosecond electron-transfer times theoretically. Results are presented for perylenes attached to the TiO2 via formic acid (Pe-COOH), propionic acid (Pe-CH2-CH2-COOH), and acrylic acid (Pe-CH [Formula: see text] CH-COOH). The calculated electron transfer times are between 5 and 10 fs with the formic acid and the conjugated acrylic acid bridges and about 35 fs with the saturated propionic acid bridge. The calculated electron injection times are of the same order of magnitude as the corresponding experimental values and qualitatively follow the experimental trend with respect to the influence of the different substitutions on the injection times.

  2. Enhanced magneto-optical properties of semiconductor EuS nanocrystals assisted by surface plasmon resonance of gold nanoparticles.

    PubMed

    Kawashima, Akira; Nakanishi, Takayuki; Shibayama, Tamaki; Watanabe, Seiichi; Fujita, Koji; Tanaka, Katsuhisa; Koizumi, Hitoshi; Fushimi, Koji; Hasegawa, Yasuchika

    2013-10-18

    Remarkable magneto-optical properties of a new isolator material, that is, europium sulfide nanocrystals with gold (EuS-Au nanosystem), has been demonstrated for a future photo-information technology. Attachment of gold particles that exhibit surface plasmon resonance leads to amplification of the magneto-optical properties of the EuS nanocrystals. To construct the EuS-Au nanosystems, cubic EuS and spherical Au nanocrystals have been joined by a variety of organic linkers, that is, 1,2-ethanedithiol (EDT), 1,6-hexanedithiol (HDT), 1,10-decanedithiol (DDT), 1,4-bisethanethionaphthalene (NpEDT), or 1,4-bisdecanethionaphthalene (NpDDT) . Formation of these systems was observed by XRD, TEM, and absorption spectra measurements. The magneto-optical properties of the EuS-Au nanosystem have been characterized by using Faraday rotation spectroscopy. The Faraday rotation angle of the EuS-Au nanosystem is dependent on the Au particle size and interparticle distance between EuS and Au nanocrystals. Enhancement of the Faraday rotation of EuS-Au nanosystems was observed. The spin configuration in the excited state of the EuS-Au nanosystem was also investigated using photo-assisted electron paramagnetic resonance.

  3. Structural Investigations of Surfaces and Orientation-SpecificPhenomena in Nanocrystals and Their Assemblies

    SciTech Connect

    Aruguete, Deborah Michiko

    2006-01-01

    Studies of colloidal nanocrystals and their assemblies are presented. Two of these studies concern the atomic-level structural characterization of the surfaces, interfaces, and interiors present in II-VI semiconductor nanorods. The third study investigates the crystallographic arrangement of cobalt nanocrystals in self-assembled aggregates. Crystallographically-aligned assemblies of colloidal CdSe nanorods are examined with linearly-polarized Se-EXAFS spectroscopy, which probes bonding along different directions in the nanorod. This orientation-specific probe is used, because it is expected that the presence of specific surfaces in a nanorod might cause bond relaxations specific to different crystallographic directions. Se-Se distances are found to be contracted along the long axis of the nanorod, while Cd-Se distances display no angular dependence, which is different from the bulk. Ab-initio density functional theory calculations upon CdSe nanowires indicate that relaxations on the rod surfaces cause these changes. ZnS/CdS-CdSe core-shell nanorods are studied with Se, Zn, Cd, and S X-ray absorption spectroscopy (XAS). It is hypothesized that there are two major factors influencing the core and shell structures of the nanorods: the large surface area-to-volume ratio, and epitaxial strain. The presence of the surface may induce bond rearrangements or relaxations to minimize surface energy; epitaxial strain might cause the core and shell lattices to contract or expand to minimize strain energy. A marked contraction of Zn-S bonds is observed in the core-shell nanorods, indicating that surface relaxations may dominate the structure of the nanorod (strain might otherwise drive the Zn-S lattice to accommodate the larger CdS or CdSe lattices via bond expansion). EXAFS and X-ray diffraction (XRD) indicate that Cd-Se bond relaxations might be anisotropic, an expected phenomenon for a rod-shaped nanocrystal. Ordered self-assembled aggregates of cobalt nanocrystals are

  4. 25th anniversary article: Ion exchange in colloidal nanocrystals.

    PubMed

    Gupta, Shuchi; Kershaw, Stephen V; Rogach, Andrey L

    2013-12-23

    We review the progress in ion exchange in a variety of nanocrystal structures from the earliest accounts dating back over two decades ago to the present day. In recent years the number of groups using this method to form otherwise difficult or inaccessible nanoparticle shapes and morphologies has increased considerably and the field has experienced a resurgence of interest. Whilst most of the early work on cation exchange centered on II-VI materials, the methodology has been expanded to cover a far broader range of semiconductor nanocrystals including low toxicity I-III-VI materials and the much less facile III-V materials. The extent of exchange can be controlled leading to lightly doped nanoparticles, alloys, core-shells, segmented rods and dots-in-rods. Progress has been driven by a better understanding of the underlying principles of the exchange process - from thermodynamic factors (differences in cation solubilities); the interactions between ions and transfer agents (solvents, ligands, anions, co-dopants); ionic in-diffusion mechanisms and kinetics. More recent availability of very detailed electron microscopy coupled with image reconstruction techniques has been a valuable tool to investigate the resulting heterostructures and internal interfaces. We start by surveying the range of synthetic approaches most often used to carry out ion exchange, mainly focusing on cation replacement strategies, and then describe the rich variety of nanostructures these techniques can bring forth. We also describe some of the principles that are used to establish the relative ease of exchange and to systematically improve the process where the basic energetics are less favorable. To help further the understanding of the underlying fundamentals we have gathered together useful data from the literature on solubilities, cation and anion hardness, ligand and solvent Lewis acid or base strengths for a wide range of chemical species generally used. We offer a perspective on the

  5. X-ray absorption fine structure and X-ray excited optical luminescence studies of II-VI semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Murphy, Michael Wayne

    2010-06-01

    of 0, 1,3, and 10% and annealed at 400, 600 and 800°C in air. XAFS spectra show that low dopant concentrations and low processing temperatures limit the amount of secondary phase formation. The nanopowders did not show roomtemperature ferromagnetism and increased secondary phase formation increases the paramagnetic character of the hysteresis curves at 5°K. Keywords: X-ray absorption fine structures (XAFS), X-ray absorption near-edge structures (XANES), extended X-ray absorption fine structure (EXAFS), X-ray absorption spectroscopy(XAS), X-ray excited optical luminescence (XEOL), time-resolved, II-VI semiconductors, nanostructure, nanomaterial, nanoribbon, nanowire, nanopartic1e, heterostructure, ZnO, ZnS, ZnO-ZnS, CdS, CdSe, CdSSe, ZnO:Mn, ZnO:Co, ZnS:Mn, dilute magnetic semiconductor (DMS), dilute magnetic oxide (DMO), spintronics, magnetism, paramagnetism, ferromagnetism.

  6. Spectroscopic analysis on metal-oxide-semiconductor light-emitting diodes with buried Si nanocrystals and nano-pyramids in SiO(x) film.

    PubMed

    Lin, Gong-Ru

    2008-03-01

    The difference between the white and near-infrared electroluminescence of metal-oxide-semiconductor light-emitting diodes fabricated on 1,100 degrees C-annealed Si-rich SiO(x)/p-Si substrate with interfacial pyramidal Si dots (Si nano-pyramids) was characterized. By changing the substrate temperature and induced coupled plasma power during the plasma enhanced chemical vapor deposition of Si-rich SiO(x) films, the effects of the growth conditions on the defect- and Si nano-pyramid-related carrier transport and Si nanocrystal-related electroluminescence spectroscopy were also investigated. The annealed Si-rich SiO(x)/p-Si films grown at higher synthesized substrate temperate (350 degrees C) show the larger Si nano-pyramids precipitating near the Si/SiO2 interface. The indium tin oxide/Si-rich SiO(x)/p-Si/Al metal-oxide-semiconductor light-emitting diodes with Si-rich SiO(x) films exhibit different white-light electroluminescence spectra at wavelengths from 400 to 650 nm. The Si nanocrystal-related electroluminescence spectra at 650-850 nm are confirmed, whereas the electroluminescence spectra are shorter wavelengths is attributed to oxygen related defects. These defects become an electron-preferred transporting path within the Si-rich SiO(x) film, whose densities are decreased by increasing the substrate temperature or reducing the induced coupled plasma power. Defect-related white-light electroluminescence emits power for a relatively short lifetime. The lifetime can be lengthened and the electroluminescence power can be raised simultaneously by increasing deposition temperature to 350 degrees C and adjusting the induced coupled plasma power to a threshold of 30 W, which effectively increases the densities of Si nanocrystals and nano-pyramids in the Si-rich SiO(x) film with Si concentration of up to 40 at%. A nearly defect-free Si-rich SiO(x) sample can be grown under such conditions, which contributes to the most stable and largest near-infrared electroluminescence

  7. Interface control of electronic and optical properties in IV-VI and II-VI core/shell colloidal quantum dots: a review.

    PubMed

    Jang, Youngjin; Shapiro, Arthur; Isarov, Maya; Rubin-Brusilovski, Anna; Safran, Aron; Budniak, Adam K; Horani, Faris; Dehnel, Joanna; Sashchiuk, Aldona; Lifshitz, Efrat

    2017-01-17

    Semiconductor colloidal quantum dots (CQDs) have attracted vast scientific and technological interest throughout the past three decades, due to the unique tuneability of their optoelectronic properties by variation of size and composition. However, the nanoscale size brings about a large surface-to-bulk volume ratio, where exterior surfaces have a pronounced influence on the chemical stability and on the physical properties of the semiconductor. Therefore, numerous approaches have been developed to gain efficient surface passivation, including a coverage by organic or inorganic molecular surfactants as well as the formation of core/shell heterostructures (a semiconductor core epitaxially covered by another semiconductor shell). This review focuses on special designs of core/shell heterostructures from the IV-VI and II-VI semiconductor compounds, and on synthetic approaches and characterization of the optical properties. Experimental observations revealed the formation of core/shell structures with type-I or quasi-type-II band alignment between the core and shell constituents. Theoretical calculations of the electronic band structures, which were also confirmed by experimental work, exposed surplus electronic tuning (beyond the radial diameter) with adaptation of the composition and control of the interface properties. The studies also considered strain effects that are created between two different semiconductors. It was disclosed experimentally and theoretically that the strain can be released via the formation of alloys at the core-shell interface. Overall, the core/shell and core/alloyed-shell heterostructures showed enhancement in luminescence quantum efficiency with respect to that of pure cores, extended lifetime, uniformity in size and in many cases good chemical sustainability under ambient conditions.

  8. Nanocrystals for electronics.

    PubMed

    Panthani, Matthew G; Korgel, Brian A

    2012-01-01

    Semiconductor nanocrystals are promising materials for low-cost large-area electronic device fabrication. They can be synthesized with a wide variety of chemical compositions and size-tunable optical and electronic properties as well as dispersed in solvents for room-temperature deposition using various types of printing processes. This review addresses research progress in large-area electronic device applications using nanocrystal-based electrically active thin films, including thin-film transistors, light-emitting diodes, photovoltaics, and thermoelectrics.

  9. Design of a multi-coordinating polymer as a platform for functionalizing metal, metal oxide and semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Wang, Wentao; Ji, Xin; Kapur, Anshika; Mattoussi, Hedi

    2016-03-01

    We introduce a new set of amphiphilic polymers as multifunctional, metal-coordinating ligands adapted to surfacefunctionalize quantum dots (QDs), iron oxide nanoparticles (IONPs) and gold nanoparticles/nanorods (AuNPs/AuNRs). The ligand design relies on the introduction of several anchoring groups, hydrophilic moieties and reactive functionalities into a polymer chain, via one-step nucleophilic addition reaction. Such synthetic scheme also allows the insertion of target biomolecules during the ligand synthesis. This functionalization strategy yields nanocrystals that exhibit long-term colloidal stability over a broad range of biological conditions, such as pH changes and when mixed with growth media. When zwitterion groups are used as hydrophilic motifs, this provides compact nanocrystals that are compatible with conjugation to proteins via metal-polyhistidine self-assembly. In addition, we show that QDs ligated with these polymers can engage in energy or charge transfer interactions. Furthermore, nanocrystals coated with folic acid-modified polymers could promote the delivery of nanoparticle-conjugates into cancer cells via folate receptormediated endocytosis.

  10. Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

  11. Small clusters of II-VI materials: ZniSi, i=1-9

    NASA Astrophysics Data System (ADS)

    Matxain, Jon M.; Fowler, Joseph E.; Ugalde, Jesus M.

    2000-05-01

    The improvements in the characterization of II-VI compound-based solar cells and the recent experimental characterization of small clusters and nanoparticles make the study of small II-VI clusters very interesting. In this work, the ground states of small ZniSi clusters are studied, i=1-9. Ringlike structures have been found to be the global minima in the case of the smaller studied clusters, i.e., i=1-5, and three-dimensional spheroid structures for larger ones, i=6-9. This is due to the stability of obtuse S-Zn-S angles in the first case, and to the stability gained from higher coordination in the second case. The three-dimensional structures may be envisioned as being built from Zn2S2 and Zn3S3 rings, the last ring being the building block of the zinc-sulfide crystal structures, both zinc blende and wurtzite. As cluster size increases, the geometry of the Zn3S3 rings is closer to the one of bulk. Moreover, this structural tendency produces trends to bulklike properties in other properties such as cohesive energy and atomic charges.

  12. Nanocrystal diffusion doping.

    PubMed

    Vlaskin, Vladimir A; Barrows, Charles J; Erickson, Christian S; Gamelin, Daniel R

    2013-09-25

    A diffusion-based synthesis of doped colloidal semiconductor nanocrystals is demonstrated. This approach involves thermodynamically controlled addition of both impurity cations and host anions to preformed seed nanocrystals under equilibrium conditions, rather than kinetically controlled doping during growth. This chemistry allows thermodynamic crystal compositions to be prepared without sacrificing other kinetically trapped properties such as shape, size, or crystallographic phase. This doping chemistry thus shares some similarities with cation-exchange reactions, but proceeds without the loss of host cations and excels at the introduction of relatively unreactive impurity ions that have not been previously accessible using cation exchange. Specifically, we demonstrate the preparation of Cd(1-x)Mn(x)Se (0 ≤ x ≤ ∼0.2) nanocrystals with narrow size distribution, unprecedentedly high Mn(2+) content, and very large magneto-optical effects by diffusion of Mn(2+) into seed CdSe nanocrystals grown by hot injection. Controlling the solution and lattice chemical potentials of Cd(2+) and Mn(2+) allows Mn(2+) diffusion into the internal volumes of the CdSe nanocrystals with negligible Ostwald ripening, while retaining the crystallographic phase (wurtzite or zinc blende), shape anisotropy, and ensemble size uniformity of the seed nanocrystals. Experimental results for diffusion doping of other nanocrystals with other cations are also presented that indicate this method may be generalized, providing access to a variety of new doped semiconductor nanostructures not previously attainable by kinetic routes or cation exchange.

  13. LDRD-LW Final Report: 07-LW-041 "Magnetism in Semiconductor Nanocrystals: New Physics at the Nanoscale"

    SciTech Connect

    Meulenberg, R W; Lee, J I; McCall, S K

    2009-10-19

    The work conducted in this project was conducted with the aim of identifying and understanding the origin and mechanisms of magnetic behavior in undoped semiconductor nanocrystals (NCs), specifically those composed of CdSe. It was anticipated that the successful completion of this task would have the effect of addressing and resolving significant controversy over this topic in the literature. Meanwhile, application of the resultant knowledge was expected to permit manipulation of the magnetic properties, particularly the strength of any magnetic effects, which is of potential relevance in a range of advanced technologies. More specifically, the project was designed and research conducted with the goal of addressing the following series of questions: (1) How does the magnitude of the magnetism in CdSe NCs change with the organic molecules used to passivate their surface the NC size? i.e. Is the magnetism an intrinsic effect in the nanocrystalline CdSe (as observed for Au NCs) or a surface termination driven effect? (2) What is the chemical (elemental) nature of the magnetism? i.e. Are the magnetic effects associated with the Cd atoms or the Se atoms or both? (3) What is/are the underlying mechanism(s)? (4) How can the magnetism be controlled for further applications? To achieve this goal, several experimental/technical milestones were identified to be fulfilled during the course of the research: (A) The preparation of well characterized CdSe NCs with varying surface termination (B) Establishing the extent of the magnetism of these NCs using magnetometry (particularly using superconducting interference device [SQUID]) (C) Establishing the chemical nature of the magnetism using x-ray magnetic circular dichroism (XMCD) - the element specific nature of the technique allows identification of the element responsible for the magnetism (D) Identification of the effect of surface termination on the empty densities of states (DOS) using x-ray absorption spectroscopy (XAS

  14. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration.

  15. Germanium Nanocrystal Solar Cells

    NASA Astrophysics Data System (ADS)

    Holman, Zachary Charles

    Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry

  16. Half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Akai, H; Ogura, M

    2006-07-14

    The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.

  17. Hydrogen in anion vacancies of semiconductors

    SciTech Connect

    Du, Mao-Hua; Singh, David J

    2009-01-01

    Density functional calculations show that, depending on the anion size, hydrogen in anion vacancies of various II-VI semiconductors can be either two-fold or four-fold coordinated, and has either amphoteric or shallow donor character. In general, the multi-coordination of hydrogen in an anion vacancy is the indication of an anionic H, H { ion, in the relatively ionic environment. In more covalent semiconductors, H would form a single cation-H bond in the anion vacancy.

  18. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

    DOE PAGES

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; ...

    2015-12-07

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from themore » OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.« less

  19. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

    PubMed

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-21

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  20. Boîtes quantiques II-VI comme sources de photons uniques

    NASA Astrophysics Data System (ADS)

    Couteau, C.; Moehl, S.; Tinjod, F.; Suffczynski, J.; Romestain, R.; Vial, J.-C.; Gérard, J.-M.; Kheng, K.; Poizat, J.-P.

    2004-11-01

    Dans le cadre de l'information et de la communication quantique, la nécessité d'avoir des photons uniques monomodes et à la demande se révèle cruciale. De récents travaux théoriques ont montré la possibilité de réaliser des portes logiques quantiques n'utilisant que de l'optique linéaire. C'est dans ce contexte que s'insère notre travail sur l'élaboration et l'utilisation de boîtes quantiques semi-conductrices II-VI comme “pistolet” à photons. Des expériences de dégroupement et d'interférences à 2 photons sont les premiers pas nécessaires pour caractériser notre source.

  1. Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Martyshkin, D. V.; Kim, C.; Moskalev, I. S.; Fedorov, V. V.; Mirov, S. B.

    2008-02-01

    Here we report a new method for transition-metal (TM) doped II-VI Quantum Dots (QD) fabrication and first mid-IR (2-3 μm) lasing at 77K of Cr 2+:ZnS QD powder (~ 27 nm grain size). Cr 2+:ZnS nanocrystalline dots (NCDs) were prepared using laser ablation. The mid-IR photoluminescence (PL) and lasing were studied. The dependence of PL spectrum profile on pump energy demonstrated a threshold behavior accompanied by the appearance of a sharp stimulated emission band around 2230 nm. The stimulated emission band is shifted to the longer wavelength with respect to the spontaneous emission and corresponds to the peak of the Cr:ZnS gain spectrum. This was also accompanied by a considerable lifetime shortening.

  2. Homogeneous linewidth of confined electron-hole-pair states in II-VI quantum dots

    NASA Astrophysics Data System (ADS)

    Woggon, U.; Gaponenko, S.; Langbein, W.; Uhrig, A.; Klingshirn, C.

    1993-02-01

    We present results of nanosecond-hole-burning experiments of small CdSe and CdS1-xSex quantum dots embedded in glass at various temperatures. The spectral width of the holes exhibits a complex interplay between excitation conditions and illumination history. Among a great variety of investigated II-VI quantum dots in glasses from various sources, we find, after strong laser illumination, samples showing spectrally narrow holes similar to those reported for quantum dots embedded in organic matrices with interfaces well defined by organic groups. These sharp nonlinear resonances with a halfwidth Γ of only 10 meV at T=20 K allow one to investigate the energetic distance of the lowest hole levels and the temperature dependence of the homogeneous line broadening. The differences in the linewidth in the hole-burning spectra are attributed to changes of interface charge states or interface polarizations under high excitation.

  3. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  4. Chemical design of nanocrystal solids.

    PubMed

    Kovalenko, Maksym V

    2013-01-01

    This account highlights our recent and present activities dedicated to chemical synthesis and applications of inorganic nanostructures. In particular, we discuss the potential of metal amides as precursors in the synthesis of metallic and semiconductor nanocrystals. We show the importance of surface chemical functionalization for the emergence of collective electronic properties in nanocrystal solids. We also demonstrate a new kind of long-range ordered, crystalline matter comprising colloidal nanocrystals and atomically defined inorganic clusters. Finally, we point the reader's attention to the high potential benefits of size- and shape-tunability of nanocrystals for achieving higher performance of rechargeable Li-ion battery electrodes.

  5. Absorption properties of one- and two-dimensional semiconductor nanocrystals in the presence of an electric field

    NASA Astrophysics Data System (ADS)

    Tepliakov, N. V.; Leonov, M. Yu.; Baranov, A. V.; Fedorov, A. V.; Rukhlenko, I. D.

    2017-01-01

    We have considered the broadening of optical absorption spectra of ensembles of randomly oriented nanorods and nanoplatelets that is caused by the action of a static electric field. It has been found that the linewidth in the spectra of the considered nanocrystals depends nonlinearly on the field strength and attains saturation in fields on the order of 100 kV/cm. We show that, due to a weak confinement, the electrooptical response of nanoplatelets is stronger than that of nanorods, which leads to a number of distinctive features in the field-induced broadening of the spectra of nanoplatelets and gives grounds to state that nanoplatelets are the most promising objects for use in electrooptical devices.

  6. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    DOEpatents

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  7. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  8. Graded core/shell semiconductor nanorods and nanorod barcodes

    SciTech Connect

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  9. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    NASA Astrophysics Data System (ADS)

    Zhang, Tian; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-01

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200-400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018-1019 cm-3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm-3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10-3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  10. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    SciTech Connect

    Zhang, Tian Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  11. Sorting fluorescent nanocrystals with DNA

    SciTech Connect

    Gerion, Daniele; Parak, Wolfgang J.; Williams, Shara C.; Zanchet, Daniela; Micheel, Christine M.; Alivisatos, A. Paul

    2001-12-10

    Semiconductor nanocrystals with narrow and tunable fluorescence are covalently linked to oligonucleotides. These biocompounds retain the properties of both nanocrystals and DNA. Therefore, different sequences of DNA can be coded with nanocrystals and still preserve their ability to hybridize to their complements. We report the case where four different sequences of DNA are linked to four nanocrystal samples having different colors of emission in the range of 530-640 nm. When the DNA-nanocrystal conjugates are mixed together, it is possible to sort each type of nanoparticle using hybridization on a defined micrometer -size surface containing the complementary oligonucleotide. Detection of sorting requires only a single excitation source and an epifluorescence microscope. The possibility of directing fluorescent nanocrystals towards specific biological targets and detecting them, combined with their superior photo-stability compared to organic dyes, opens the way to improved biolabeling experiments, such as gene mapping on a nanometer scale or multicolor microarray analysis.

  12. 3D assembly of semiconductor and metal nanocrystals: hybrid CdTe/Au structures with controlled content.

    PubMed

    Lesnyak, Vladimir; Wolf, André; Dubavik, Aliaksei; Borchardt, Lars; Voitekhovich, Sergei V; Gaponik, Nikolai; Kaskel, Stefan; Eychmüller, Alexander

    2011-08-31

    A 3D metal ion assisted assembly of nanoparticles has been developed. The approach relies on the efficient complexation of cadmium ions and 5-mercaptomethyltetrazole employed as the stabilizer of both colloidal CdTe and Au nanoparticles. It enables in a facile way the formation of hybrid metal-semiconductor 3D structures with controllable and tunable composition in aqueous media. By means of critical point drying, these assemblies form highly porous aerogels. The hybrid architectures obtained are characterized by electron microscopy, nitrogen adsorption, and optical spectroscopy methods.

  13. Substitutional doping in nanocrystal superlattices

    NASA Astrophysics Data System (ADS)

    Cargnello, Matteo; Johnston-Peck, Aaron C.; Diroll, Benjamin T.; Wong, Eric; Datta, Bianca; Damodhar, Divij; Doan-Nguyen, Vicky V. T.; Herzing, Andrew A.; Kagan, Cherie R.; Murray, Christopher B.

    2015-08-01

    Doping is a process in which atomic impurities are intentionally added to a host material to modify its properties. It has had a revolutionary impact in altering or introducing electronic, magnetic, luminescent, and catalytic properties for several applications, for example in semiconductors. Here we explore and demonstrate the extension of the concept of substitutional atomic doping to nanometre-scale crystal doping, in which one nanocrystal is used to replace another to form doped self-assembled superlattices. Towards this goal, we show that gold nanocrystals act as substitutional dopants in superlattices of cadmium selenide or lead selenide nanocrystals when the size of the gold nanocrystal is very close to that of the host. The gold nanocrystals occupy random positions in the superlattice and their density is readily and widely controllable, analogous to the case of atomic doping, but here through nanocrystal self-assembly. We also show that the electronic properties of the superlattices are highly tunable and strongly affected by the presence and density of the gold nanocrystal dopants. The conductivity of lead selenide films, for example, can be manipulated over at least six orders of magnitude by the addition of gold nanocrystals and is explained by a percolation model. As this process relies on the self-assembly of uniform nanocrystals, it can be generally applied to assemble a wide variety of nanocrystal-doped structures for electronic, optical, magnetic, and catalytic materials.

  14. Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Zhu, S.; Li, C.; Scripa, R.; Lehoczky, S. L.; Kim, Y. M.; Baird, J. K.; Lin, B.; Ban, H.; Benmore, Chris; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed

  15. Batatinosides II-VI, acylated lipooligosaccharides from the resin glycosides of sweet potato.

    PubMed

    Escalante-Sánchez, Edgar; Rosas-Ramírez, Daniel; Linares, Edelmira; Bye, Robert; Pereda-Miranda, Rogelio

    2008-10-22

    Sweet potato ( Ipomoea batatas) belongs to the Convolvulaceae (morning glory family) and is native to Mexico and Central America. Its edible tuberous roots have been much appreciated since pre-Hispanic times in Mesoamerica and now play an important role as a basic diet staple and a medicinal plant worldwide. The hexane-soluble extract from roots, through preparative-scale recycling HPLC, yielded five new lipophilic oligosaccharides of jalapinolic acid, batatinosides II-VI ( 1- 5), as well as the known pescapreins I ( 6) and VII ( 7) and murucoidin I ( 8), which are part of the purgative resin glycoside mixture. NMR spectroscopy and FAB mass spectrometry were used to characterize their structures. Compounds 1 and 2 are tetraglycosidic lactones of operculinic acid C. The pentasaccharide structures for compounds 3 and 4 were confirmed to be macrolactones of simonic acid B, and that characterized for 5 was derived from operculinic acid A. The lactonization site of the aglycone was placed at C-3 of the second saccharide unit in all compounds except 4, where it was placed at C-2. All compounds contain an esterifying residue that is composed of a long-chain fatty acid, n-decanoic acid (capric) or n-dodecanoic acid (lauric). In compound 3, an additional short-chain fatty acid, (2 S)-methylbutyric acid, was also identified.

  16. Growth of II-VI Solid Solutions in the Presence of a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C; Motakef, S.; Dudley, M.; Matyi, R.; Volz, H.

    1999-01-01

    The application of a rotating magnetic field (RMF)in the frequency range 60-400 Hz and field strength of the order of 2-8 mT to crystal growth has received increasing attention in recent years. To take full advantage of the control of fluid flow by the forces applied by the field, the liquid column must be electrically conducting. Also, the application of RMF to the directional solidification of a column of liquid can result in complete mixing in the resultant solid. Thus, the technique of RMF is suited to solvent zones and float zones where the composition of the liquid is more readily controlled. In the work we report on, numerical modeling has been applied to II-VI systems, particularly tellurium based traveling heater techniques (THM). Results for a spectrum of field strengths and acceleration levels will be presented. These show clearly the effects of competing buoyancy forces and electromagnetic stirring. Crystals of cadmium zinc telluride and mercury cadmium telluride have been grown terrestrially from a tellurium solvent zone. The effects of the RMF during these experiments will be demonstrated with micrographs showing etch pits, white beam x-ray synchrotron topographs and triple axis x-ray diffraction.

  17. Quantum Dot Channel (QDC) FETs with Wraparound II-VI Gate Insulators: Numerical Simulations

    NASA Astrophysics Data System (ADS)

    Jain, F.; Lingalugari, M.; Kondo, J.; Mirdha, P.; Suarez, E.; Chandy, J.; Heller, E.

    2016-11-01

    This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II-VI lattice-matched layers which reduce the density of interface states, serving as top (tunnel gate), side, and bottom gate insulators, have been simulated. Quantum simulations show FET operation with voltage swing of ~0.2 V. Incorporation of cladded quantum dots, such as SiO x -Si and GeO x -Ge, under the gate tunnel oxide results in electrical transport in one or more quantum dot layers which form a quantum dot superlattice (QDSL). Long-channel QDC FETs have experimental multistate drain current ( I D)-gate voltage ( V G) and drain current ( I D)-drain voltage ( V D) characteristics, which can be attributed to the manifestation of extremely narrow energy minibands formed in the QDSL. An approach for modeling the multistate I D- V G characteristics is reported. The multistate characteristics of QDC FETs permit design of compact two-bit multivalued logic circuits.

  18. Growth of II-VI thin-films from single-source precursors based on sterically encumbered sitel ligands

    SciTech Connect

    Arnold, J.; Seligson, A.L.; Walker, J.M.; Bourret, E.D.; Bonasia, P.J.

    1992-04-01

    We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel){sub 2} where sitel = -TeSi(SiMe{sub 3}){sub 3}. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products.

  19. Real-Time Observation of Morphological Transformations in II-VI Semiconducting Nanobelts via Environmental Transmission Electron Microscopy.

    PubMed

    Agarwal, Rahul; Zakharov, Dmitri N; Krook, Nadia M; Liu, Wenjing; Berger, Jacob S; Stach, Eric A; Agarwal, Ritesh

    2015-05-13

    It has been observed that wurtzite II-VI semiconducting nanobelts transform into single-crystal, periodically branched nanostructures upon heating. The mechanism of this novel transformation has been elucidated by heating II-VI nanobelts in an environmental transmission electron microscope (ETEM) in oxidizing, reducing, and inert atmospheres while observing their structural changes with high spatial resolution. The interplay of surface reconstruction of high-energy surfaces of the wurtzite phase and environment-dependent anisotropic chemical etching of certain crystal surfaces in the branching mechanism of nanobelts has been observed. Understanding of structural and chemical transformations of materials via in situ microscopy techniques and their role in designing new nanostructured materials is discussed.

  20. Calculated electronic structures and Néel temperatures of half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Ogura, M; Takahashi, C; Akai, H

    2007-09-12

    The possibility of half-metallic diluted antiferromagnetic semiconductors of II-VI compounds is investigated on the basis of first-principles electronic structure calculation. The electronic structures of ZnS, ZnSe, ZnO, CdS and CdSe doped with two kinds of 3d transition metal ions are calculated using the Korringa-Kohn-Rostoker (KKR) method and their magnetic transition temperatures are determined using a cluster-type approximation. It is predicted that II-VI compound semiconductors doped with two kinds of magnetic ions might be good candidates for half-metallic antiferromagnets.

  1. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2008-02-05

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties

  2. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2010-04-06

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

  3. Solidification of II-VI Compounds in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Volz, M. P.; Mazuruk, K.; Motakef, S.; Dudley, M.; Matyi, R.

    1999-01-01

    This project is aimed at using a rotating magnetic field (RMF) to control fluid flow and transport during directional solidification of elemental and compound melts. Microgravity experiments have demonstrated that small amounts of residual acceleration of less than a micro-g can initiate and prolong fluid flow, particularly when there is a static component of the field perpendicular to the liquid solid interface. Thus a true diffusion boundary layer is not formed, and it becomes difficult to verify theories of solidification or to achieve diffusion controlled solidification. The RMF superimposes a stirring effect on an electrically conducting liquid, and with appropriate field strengths and frequencies, controlled transport of material through a liquid column can be obtained. As diffusion conditions are precluded and complete mixing conditions prevail, the technique is appropriate for traveling solvent zone or float zone growth methods in which the overall composition of the liquid can be maintained throughout the growth experiment. Crystals grown by RMF techniques in microgravity in previous, unrelated missions have shown exceptional properties. The objective of the project is two-fold, namely (1) using numerical modeling to simulate the behavior of a solvent zone with applied thermal boundary conditions and demonstrate the effects of decreasing gravity levels, or an increasing applied RMF, or both, and (2) to grow elements and II-VI compounds from traveling solvent zones both with and without applied RMFs, and to determine objectively how well the modeling predicts solidification parameters. Numerical modeling has demonstrated that, in the growth of CdTe from a tellurium solution, a rotating magnetic field can advantageously modify the shape of the liquid solid interface such that the interface is convex as seen from the liquid. Under such circumstances, the defect structure is reduced as any defects which are formed tend to grow out and not propagate. The flow

  4. Electronic Levels Of Cr2+ Ion Doped In II-VI Compounds Of ZnS - Crystal Field Treatment

    NASA Astrophysics Data System (ADS)

    Ivaşcu, Simona

    2012-12-01

    The aim of present paper is to report the results on the modeling of the crystal field and spin-Hamiltonian parameters of Cr2+ doped in II-VI host matrix ZnS and simulate the energy levels scheme of such system taken into account the fine interactions entered in the Hamiltonian of the system. All considered types of such interaction are expected to give information on the new peculiarities of the absorption and emission bands, as well as of non-radiative transitions between the electronic states of impurity ions. The obtained results were disscused, compared with similar obtained results in literature and with experimental data.

  5. Recent developments of hybrid nanocrystal/polymer bulk heterojunction solar cells.

    PubMed

    Tang, Aiwei; Qu, Shengchun; Teng, Feng; Hou, Yanbing; Wang, Yongsheng; Wang, Zhanguo

    2011-11-01

    Hybrid nanocrystal/polymer bulk heterojunction (BHJ) solar cells consisting of colloidal inorganic semiconductor nanocrystals as electron acceptors and conjugated polymers as electron donors have been extensively investigated in the past few decades, which take advantage of the strongpoints of the inorganic semiconductor nanocrystals and the conjugated polymers. Currently, power conversion efficiency over 3% for the hybrid nanocrystal/polymer BHJ solar cells has been achieved. Although the development of hybrid nanocrystal/polymer BHJ solar cells lacks behind the international level, great progress in this research field has been made in China. In this article, we first review the general fabrication techniques and general working principles of hybrid nanocrystal/polymer BHJ solar cells. Secondly, we highlight the international and national developments of hybrid nanocrystal/polymer BHJ solar cells based on different types of semiconductor nanocrystals and conjugated polymers. Finally, we give a future outlook for the hybrid nanocrystal/polymer BHJ solar cells in the worldwide.

  6. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    NASA Technical Reports Server (NTRS)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  7. Cross-sectional scanning tunneling microscopy study on II-VI multilayer structures

    NASA Astrophysics Data System (ADS)

    Wierts, A.; Ulloa, J. M.; ćelebi, C.; Koenraad, P. M.; Boukari, H.; Maingault, L.; André, R.; Mariette, H.

    2007-10-01

    Cross-sectional scanning tunneling microscopy is used to study in the atomic scale the structural properties of ZnSeTe /ZnTe multiple quantum wells and N:ZnTe delta-doped structures. Some peculiar effects are found on the cleaved (110) ZnTe surface plane, which have not been observed in III-V semiconductors. In particular, cleavage induced monatomic wide vacancy chains are always present on the Te sublattice. Furthermore, the semiconductor surface is manipulated when certain positive voltages are applied to the sample. Regarding the heterostructures, the ZnSeTe /ZnTe quantum wells are found to have abrupt interfaces and the Se concentration is determined to be significantly larger than the nominal value.

  8. Biomolecular Assembly of Gold Nanocrystals

    SciTech Connect

    Micheel, Christine Marya

    2005-05-20

    Over the past ten years, methods have been developed to construct discrete nanostructures using nanocrystals and biomolecules. While these frequently consist of gold nanocrystals and DNA, semiconductor nanocrystals as well as antibodies and enzymes have also been used. One example of discrete nanostructures is dimers of gold nanocrystals linked together with complementary DNA. This type of nanostructure is also known as a nanocrystal molecule. Discrete nanostructures of this kind have a number of potential applications, from highly parallel self-assembly of electronics components and rapid read-out of DNA computations to biological imaging and a variety of bioassays. My research focused in three main areas. The first area, the refinement of electrophoresis as a purification and characterization method, included application of agarose gel electrophoresis to the purification of discrete gold nanocrystal/DNA conjugates and nanocrystal molecules, as well as development of a more detailed understanding of the hydrodynamic behavior of these materials in gels. The second area, the development of methods for quantitative analysis of transmission electron microscope data, used computer programs written to find pair correlations as well as higher order correlations. With these programs, it is possible to reliably locate and measure nanocrystal molecules in TEM images. The final area of research explored the use of DNA ligase in the formation of nanocrystal molecules. Synthesis of dimers of gold particles linked with a single strand of DNA possible through the use of DNA ligase opens the possibility for amplification of nanostructures in a manner similar to polymerase chain reaction. These three areas are discussed in the context of the work in the Alivisatos group, as well as the field as a whole.

  9. Direct Binding of Fluorescent CdSe-ZnS Core shell Semiconductor Nanocrystals to Biological Macromolecules: Efficient Tool for Fluorescence Tagging of Biological Macromolecules

    NASA Astrophysics Data System (ADS)

    Mattoussi, Hedi; Anderson, George P.; Mauro, J. Matthew; Goldman, Ellen R.

    2000-03-01

    We present a study that describes a novel and direct approach of binding highly luminescent CdSe-ZnS core-shell nanocrystals to biological molecules for use as fluorescent probes in biosensing and diagnostics. We use dithiol-based groups as the surface capping agent, which provides nanocrystal dispersions with high quantum yield. The approach makes use of a recombinant protein, which binds directly to the dithiol cap, and provides addition stability of the quantum dots in water solutions. Hence stable and highly luminescent bound nanocrystal-biomolecules have been prepared. The present process provides aggregation-free solutions with a high luminescence yield. Combining the properties of the CdSe-ZnS (photochemical stability and wide range of emission wavelengths) and the simple binding approach, the resultant materials provide a sensitive and powerful tool for tagging of biological molecules. We will discuss the chemistry involved and present various characterization studies of these complex systems, such as photoluminescence spectroscopy, high-resolution microscopy. We will also discuss the use of these materials in immunoassays.

  10. Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby

    DOEpatents

    Devaney, Walter E.

    1987-08-04

    Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

  11. Size-Dependent Raman Shifts for nanocrystals

    PubMed Central

    Gao, Yukun; Zhao, Xinmei; Yin, Penggang; Gao, Faming

    2016-01-01

    Raman spectroscopy is a very sensitive tool for probing semiconductor nanocrystals. The underlying mechanism behind the size-dependent Raman shifts is still quite controversial. Here we offer a new theoretical method for the quantum confinement effects on the Raman spectra of semiconductor nanocrystals. We propose that the shift of Raman spectra in nanocrystals can result from two overlapping effects: the quantum effect shift and surface effect shift. The quantum effect shift is extracted from an extended Kubo formula, the surface effect shift is determined via the first principles calculations. Fairly good prediction of Raman shifts can be obtained without the use of any adjustable parameter. Closer analysis shows that the size-dependent Raman shifts in Si nanocrystals mainly result from the quantum effect shifts. For nanodiamond, the proportion of surface effect shift in Raman shift is up to about 40%. Such model can also provide a good baseline for using Raman spectroscopy as a tool to measure size. PMID:27102066

  12. Measuring the Valence of Nanocrystal Surfaces

    SciTech Connect

    Owen, Jonathan Scharle

    2016-11-30

    The goal of this project is to understand and control the interplay between nanocrystal stoichiometry, surface ligand binding and exchange, and the optoelectronic properties of semiconductor nanocrystals in solution and in thin solid films. We pursued three research directions with this goal in mind: 1) We characterized nanocrystal stoichiometry and its influence on the binding of L-type and X-type ligands, including the thermodynamics of binding and the kinetics of ligand exchange. 2) We developed a quantitative understanding of the relationship between surface ligand passivation and photoluminescence quantum yield. 3) We developed methods to replace the organic ligands on the nanocrystal with halide ligands and controllably deposit these nanocrystals into thin films, where electrical measurements were used to investigate the electrical transport and internanocrystal electronic coupling.

  13. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-07

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  14. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: Energy transfer vs. optical coupling effects

    SciTech Connect

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D.; Nykypanchuk, Dmytro; Nam, Chang -Yong

    2015-12-07

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. Lastly, these results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  15. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    NASA Astrophysics Data System (ADS)

    Kramer, Nicolaas Johannes

    The impact of nanotechnology on our society is getting larger every year. Electronics are becoming smaller and more powerful, the "Internet of Things" is all around us, and data generation is increasing exponentially. None of this would have been possible without the developments in nanotechnology. Crystalline semiconductor nanoparticles (nanocrystals) are one of the latest developments in the field of nanotechnology. This thesis addresses three important challenges for the transition of silicon nanocrystals from the lab bench to the marketplace: A better understanding of the nanocrystal synthesis was obtained, the electronic properties of the nanocrystals were characterized and tuned, and novel silicon nanocrystal inks were formed and applied using simple coating technologies. Plasma synthesis of nanocrystals has numerous advantages over traditional solution-based synthesis methods. While the formation of nanoparticles in low pressure nonthermal plasmas is well known, the heating mechanism leading to their crystallization is poorly understood. A combination of comprehensive plasma characterization with a nanoparticle heating model presented here reveals the underlying plasma physics leading to crystallization. The model predicts that the nanoparticles reach temperatures as high as 900 K in the plasma as a result of heating reactions on the nanoparticle surface. These temperatures are well above the gas temperature and sufficient for complete nanoparticle crystallization. Moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for industrial applications. The heating and charging model for silicon nanoparticles was adapted in Chapter 3 to study plasmas maintained over a wide range of pressures (10 -- 105 Pa). The model considers three collisionality regimes and determines the dominant contribution of each regime under various plasma conditions. Strong nanoparticle cooling at

  16. Characterization of organic and inorganic optoelectronic semiconductor devices using advanced spectroscopic methods

    NASA Astrophysics Data System (ADS)

    Schroeder, Raoul

    In this thesis, advanced spectroscopy methods are discussed and applied to gain understanding of the physical properties of organic conjugated molecules, II-VI thin film semiconductors, and vertical cavity surface emitting lasers (VCSEL). Experiments include single photon and two-photon excitation with lasers, with subsequent measurements of the absorption and photoluminescence, as well as photocurrent measurements using tungsten and xenon lamps, measuring the direct current and the alternating current of the devices. The materials are investigated in dissolved form (conjugated polymers), thin films (polymers, II-VI semiconductors), and complex layer structures (hybrid device, VCSEL). The experiments are analyzed and interpreted by newly developed or applied theories for two-photon saturation processes in semiconductors, bandgap shrinkage due to optically induced electron hole pairs, and the principle of detailed balance to describe the photoluminescence in thin film cadmium sulfide.

  17. The Surface Chemistry of Metal Chalcogenide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Anderson, Nicholas Charles

    The surface chemistry of metal chalcogenide nanocrystals is explored through several interrelated analytical investigations. After a brief discussion of the nanocrystal history and applications, molecular orbital theory is used to describe the electronic properties of semiconductors, and how these materials behave on the nanoscale. Quantum confinement plays a major role in dictating the optical properties of metal chalcogenide nanocrystals, however surface states also have an equally significant contribution to the electronic properties of nanocrystals due to the high surface area to volume ratio of nanoscale semiconductors. Controlling surface chemistry is essential to functionalizing these materials for biological imaging and photovoltaic device applications. To better understand the surface chemistry of semiconducting nanocrystals, three competing surface chemistry models are presented: 1.) The TOPO model, 2.) the Non-stoichiometric model, and 3.) the Neutral Fragment model. Both the non-stoichiometric and neutral fragment models accurately describe the behavior of metal chalcogenide nanocrystals. These models rely on the covalent bond classification system, which divides ligands into three classes: 1.) X-type, 1-electron donating ligands that balance charge with excess metal at the nanocrystal surface, 2.) L-type, 2-electron donors that bind metal sites, and 3.) Z-type, 2-electron acceptors that bind chalcogenide sites. Each of these ligand classes is explored in detail to better understand the surface chemistry of metal chalcogenide nanocrystals. First, chloride-terminated, tri-n-butylphosphine (Bu 3P) bound CdSe nanocrystals were prepared by cleaving carboxylate ligands from CdSe nanocrystals with chlorotrimethylsilane in Bu3P solution. 1H and 31P{1H} nuclear magnetic resonance spectra of the isolated nanocrystals allowed assignment of distinct signals from several free and bound species, including surface-bound Bu3P and [Bu3P-H]+[Cl]- ligands as well as a Bu

  18. Infrared colloidal lead chalcogenide nanocrystals: synthesis, properties, and photovoltaic applications.

    PubMed

    Fu, Huiying; Tsang, Sai-Wing

    2012-04-07

    Simple solution phase, catalyst-free synthetic approaches that offer monodispersed, well passivated, and non-aggregated colloidal semiconductor nanocrystals have presented many research opportunities not only for fundamental science but also for technological applications. The ability to tune the electrical and optical properties of semiconductor nanocrystals by manipulating the size and shape of the crystals during the colloidal synthesis provides potential benefits to a variety of applications including photovoltaic devices, light-emitting diodes, field effect transistors, biological imaging/labeling, and more. Recent advances in the synthesis and characterization of colloidal lead chalcogenide nanocrystals and the achievements in colloidal PbS or PbSe nanocrystals solar cells have demonstrated the promising application of infrared-emitting colloidal lead chalcogenide nanocrystals in photovoltaic devices. Here, we review recent progress in the synthesis and optical properties of colloidal lead chalcogenide nanocrystals. We focus in particular upon the size- and shape-controlled synthesis of PbS, PbSe, and PbTe nanocrystals by using different precursors and various stabilizing surfactants for the growth of the colloidal nanocrystals. We also summarize recent advancements in the field of colloidal nanocrystals solar cells based on colloidal PbS and PbSe nanocrystals.

  19. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGES

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  20. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2010-06-22

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  1. Multifunctional nanocrystals

    DOEpatents

    Klimov, Victor I.; Hollingsworth, Jennifer A.; Crooker, Scott A.; Kim, Hyungrak

    2007-08-28

    Multifunctional nanocomposites are provided including a core of either a magnetic material or an inorganic semiconductor, and, a shell of either a magnetic material or an inorganic semiconductor, wherein the core and the shell are of differing materials, such multifunctional nanocomposites having multifunctional properties including magnetic properties from the magnetic material and optical properties from the inorganic semiconductor material. Various applications of such multifunctional nanocomposites are also provided.

  2. Patterning nanocrystals using DNA

    NASA Astrophysics Data System (ADS)

    Williams, Shara Carol

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made. Here, we have sought to assemble larger and more complex nanostructures. Cold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA "trimer." This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices to a length greater than 20 mum, and

  3. Patterning nanocrystals using DNA

    SciTech Connect

    Williams, Shara Carol

    2003-01-01

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made.[1] Here, we have sought to assemble larger and more complex nanostructures. Gold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure [2][3] that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA ''trimer.'' This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices to a length greater than

  4. Self-assembly of lead chalcogenide nanocrystals.

    PubMed

    Quan, Zewei; Valentin-Bromberg, Loriana; Loc, Welley Siu; Fang, Jiye

    2011-05-02

    This review focuses on recent developments in the self-assembly of lead chalcogenide nanocrystals into two- and three-dimensional superstructures. Self-assembly is categorized by the shapes of building blocks, including nanospheres, nanocubes, nano-octahedra, and nanostars. In the section on nanospheres, rapid assemblies of lead chalcogenide-based multicomponent nanocrystals with additional components, such as semiconductors, noble metals, and magnetic nanocrystals, are further highlighted. In situ self-assembly of lead chalcogenide nanocrystals into one-dimensional nanostructures at elevated temperatures is also covered. Each section of this paper highlights examples extracted from recent publications. Finally, relatively novel properties and applications arising from lead chalcogenide superlattices as typical examples are also discussed.

  5. Pyrite Nanocrystal Solar Cells: Promising, or Fool's Gold?

    PubMed

    Steinhagen, Chet; Harvey, Taylor B; Stolle, C Jackson; Harris, Justin; Korgel, Brian A

    2012-09-06

    Pyrite-phase iron sulfide (FeS2) nanocrystals were synthesized to form solvent-based dispersions, or "solar paint," to fabricate photovoltaic devices (PVs). Nanocrystals were sprayed onto substrates as absorber layers in devices with several different architectures, including Schottky barrier, heterojunction, and organic/inorganic hybrid architectures, to explore their viability as a PV material. None of the devices exhibited PV response. XRD and Raman spectroscopy confirmed the pyrite composition and phase purity of the nanocrystals. The electrical conductivity of the nanocrystal films was about 4 to 5 S/cm, more typical of metal nanocrystal films than semiconductor nanocrystal films, and the lack of PV response appears to derive from the highly conductive surface-related defects in pyrite that have been proposed.

  6. Colloidal inorganic nanocrystals: Nucleation, growth and biological applications

    NASA Astrophysics Data System (ADS)

    Lynch, Jared James

    Colloidal inorganic nanocrystals are a class of material whose size ranges from a few nanometers to a hundred nanometers in dimension. These nanocrystals have size dependent properties that differ significantly from the bulk material counterparts. Due to their unique physical properties colloidal inorganic nanocrystals have several promising applications in a diverse range of areas, such as biomedical diagnosis, catalysis, plasmonics, high-density data storage and solar energy conversion. This dissertation presents the study of the formation of iron oxide nanocrystals under the influence of solvent and Ar gas bubbles, the phase transfer of metal oxide nanocrystals into water using inorganic ions, and the doping of semiconductor CdS/ZnS core/shell nanocrystals with copper and silver ions. First, the formation of iron oxide nanocrystals is investigated in the presence of boiling solvent or Ar bubbles. Using a non-injection based synthesis method, the thermal decomposition of iron oleate was studied under various reaction conditions, and the role of the bubbles on the nucleation and growth of iron oxide nanocrystals was determined. Kinetics studies were used to elucidate how latent heat transfer from the bubbles allows for "active monomers" to form preferentially from exothermic reactions taking place during nucleation. General insights into colloidal inorganic nanocrystal formation are discussed. Second, a non-injection based synthesis for CdS/ZnS core/shell nanocrystals is used to make high quality semiconductor particles which are intentionally doped with Cu or Ag ions. The Ag ions effect on the optical properties of the CdS/ZnS nanocrystals is investigated. The absorption and fluorescence of the samples is measured as a function of time and temperature. Proposed mechanisms for the observations are given and thoroughly discussed. Comparisons between previous results for Cu doped CdS/ZnS nanocrystals are also made to further understand how doping of semiconductor

  7. Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

    SciTech Connect

    Hughes, Steven Michael

    2007-01-01

    The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

  8. Lead sulphide nanocrystal photodetector technologies

    NASA Astrophysics Data System (ADS)

    Saran, Rinku; Curry, Richard J.

    2016-02-01

    Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

  9. Bi-photon imaging and diagnostics using ultra-small diagnostic probes engineered from semiconductor nanocrystals and single-domain antibodies

    NASA Astrophysics Data System (ADS)

    Hafian, Hilal; Sukhanova, Alyona; Chames, Patrick; Baty, Daniel; Pluot, Michel; Cohen, Jacques H. M.; Nabiev, Igor R.; Millot, Jean-Marc

    2012-10-01

    Semiconductor fluorescent quantum dots (QDs) have just demonstrated their numerous advantages over organic dyes in bioimaging and diagnostics. One of characteristics of QDs is a very large cross section of their twophoton absorption. A common approach to biodetection by means of QDs is to use monoclonal antibodies (mAbs) for targeting. Recently, we have engineered ultrasmall diagnostic nanoprobes (sdAb-QD) based on highly oriented conjugates of QDs with the single-domain antibodies (sdAbs) against cancer biomarkers. With a molecular weight of only 13 kDa (12-fold smaller than full-size mAbs) and extreme stability and capacity to refolding, sdAbs are the smallest functional Ab fragments capable of binding antigens with affinities comparable to those of conventional Abs. Ultrasmall diagnostic sdAb-QD nanoprobes were engineered through oriented conjugation of QDs with sdAbs. This study is the first to demonstrate the possibility of immunohistochemical imaging of colon carcinoma biomarkers with sdAb-QD conjugates by means of two-photon excitation. The optimal excitation conditions for imaging of the markers in clinical samples with sdAb-QD nanoprobes have been determined. The absence of sample autofluorescence significantly improves the sensitivity of biomarker detection with the use of the two-photon excitation diagnostic setup.

  10. Synthesis and investigation of optical properties of TOPO-capped CuInS{sub 2} semiconductor nanocrystal in the presence of different solvent

    SciTech Connect

    Asgary, Saeid; Mirabbaszadeh, Kavoos; Nayebi, Payman; Emadi, Hamid

    2014-03-01

    Graphical abstract: - Highlights: • TOPO-capped CuInS{sub 2} nanoparticles were synthesized by injection method. • Pure CuInS{sub 2} nanoparticle was obtained by injection in 200 °C. • The size, shape and optical properties of products were controlled. • Nanoparticles with size smaller than 10 nm and wurtzite phase was obtained. • The absorption and PL spectra of CuInS{sub 2} nanoparticles were tunable. - Abstract: In this work, synthesis of CuInS{sub 2} semiconductor nanoparticles by thermolysis of a mixed solution of CuAc, In(Ac){sub 3} and DDT in coordinating solvent and trioctylphosphine oxide (TOPO) as ligand was developed. CuInS{sub 2} nanoparticles with size of −10 nm and nanorods were obtained and optical properties controlled by adjusting the reaction parameters such as temperature and time. Also the shape of nanoparticles was controlled by various solvents elaborately. The as-prepared nanoparticles were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM), UV–vis absorption, and photoluminescence (PL) spectroscopy. With the use of different solvent different morphology obtained. In the presence of oleylamine/octadecene rectangle-like nanorods obtained while with the use of oleic acid sphere-like nanoparticles achieved.

  11. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  12. Chemistry related to semiconductor growth involving organometallics

    NASA Astrophysics Data System (ADS)

    Husk, G. R.; Jones, K. A.; Paur, R. J.; Prater, J. T.

    1990-05-01

    OMVPE (OrganoMetallic Vapor-Phase Epitaxy) technology requirements for III-V compounds and chemistry related to semiconductor growth involving organometallics are discussed. The following subject areas are covered: semiconductor device requirements; Army II-VI deposition program/MOMBE (Metal Organic Molecular Beam Epitaxy) for IR detector applications; epitaxial growth of III-V's and II-VI's using organometallics; electrical device requirements; environmental and safety issues in MOVPE; quantum chemistry of vapor phase; carbon doping and selective epitaxy (tailoring growth chemistry in MOVPE); TBA/TBP precursors in GaAs and InP MOCVD; single source precursors for III-V OMCVD (OrganoMetallic Chemical Vapor Deposition) growth; alternate sources for MOMBE of AlGaAs; mechanism of incorporation of impurities and analysis of carbon contamination; growth on nonplanar and patterned substrates; CBE growth mechanisms; TriMethylamine Alane (a new robust precursor for MOMBE growth of AlGaAs); real-time determinations of OMCVD growth kinetics on GaAs by reflectance-difference spectroscopy; photoreflectance measurements; growth and doping mechanisms for HgCdTe; photoassisted CBE (Chemical Beam Epitaxy) of CdTe and HgCdTe alloys; in-situ analysis of ZnSe growth by OMCVD using X-ray scattering; biodegradation of GaAs IC chips and wafers; detailed models of compound semiconductor growth by MOCVD; gas phase probes of GaAs cluster chemistry; photodecomposition of organometallic compounds at 193 nm; manufacturing issues in MOCVD compound semiconductor technology.

  13. Plasmonic engineering of spontaneous emission from silicon nanocrystals

    PubMed Central

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells. PMID:24037020

  14. Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

    NASA Astrophysics Data System (ADS)

    Lee, Jong Jin; Harada, Yoshinao; Pyun, Jung Woo; Kwong, Dim-Lee

    2005-03-01

    This letter presents the formation of nickel nanocrystal on HfO2 high-k dielectric and its application to the nonvolatile memory devices. The effects of the initial nickel layer thickness and annealing temperature on nickel nanocrystal formation are investigated. The n-metal-oxide-semiconductor field-effect transistor with nickel nanocrystals and HfO2 tunneling dielectrics is fabricated and its programming, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

  15. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    DTIC Science & Technology

    2015-08-27

    solar cell. Later on, the optical addressing has been achieved in a near-and-long-wave infrared multiband photodetector integrated by a NIR AlGaAs...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...Center for Photonics Innovation  &  Fulton Entrepreneurial Professor, School of Electrical, Computer and  Energy  Engineering  Arizona State University

  16. Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems. Materials Research Society Symposium Proceedings. Volume 161

    DTIC Science & Technology

    1990-11-21

    BULK CdTe P.M. AMIRTHARAJ AND N.K. DHAR U.S. Army Center for Night Vision and Electro-Optics Fort Belvoir, VA-22060 ABSTRACT The native defects...those that contain exposed surfaces. ACKNOWLEDGEMENT The authors wish to acknowledge Mr. Philip R. Boyd of the U.S. Army Center for Night Vision and...del IPN. Apdo. Postal 14-740, 07000 Mexico, D. F. +Departamento de Fisica del Instituto de Ciencias, Universidad Aut6noma de Puebla , Apdo. Postal J-48

  17. Fabrication and characterization of CdS thin films: Study of the adhesion of II-VI compound semiconductors for applications to light emitting and absorbing devices

    SciTech Connect

    Kang, H.S.; Cho, G.E.; Kim, K.W.; Persans, P.D.

    1996-12-31

    The structural and optoelectronic properties of polycrystalline CdS films, fabricated by three different methods, are compared to one another for the purpose of preparing CdTe/CdS solar cells. The three methods were: alternated spraying of cation and anion solution at room temperature, spray pyrolysis, and chemical bath deposition. The authors studied the surface morphology and crystal quality and texture by scanning electron and optical microscopy and x-ray diffraction. All films had a well-developed wurtzite structure. Films grown by the alternated-spray method and the chemical bath method consist of randomly-oriented crystallites with dimensions < 0.5 microns. Annealing at 400 C increases the crystallite size slightly. Films which were grown by pyrolysis at substrate temperatures from 400 C to 500 C were oriented in the <002> direction. For growth by pyrolysis at 500 C, the surface is rough on a lateral scale of 0.1 to 0.3 microns.

  18. Effects of γ-irradiation on optical, electrical, and laser characteristics of pure and transition metal doped II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Konak, Tetyana; Tekavec, Michael; Fedorov, Vladimir V.; Mirov, Sergey B.

    2011-02-01

    We report a comprehensive study of gamma-irradiation on optical, electrical, and laser characteristics of pure and transition-metal doped single and polycrystalline ZnS and ZnSe. Polished pure, Cr-doped, and Ag, Au, Cu, Al, In, and Mn co-doped ZnS and ZnSe crystals after absorption and electro-conductivity characterization were gamma-irradiated at doses of 1.37x108, and 1.28x108 rad at +10 and -3°C, respectively. Dynamic RT absorption studies, electro-conductivity measurements and mid-IR lasing were performed for different exposition times of crystals at RT. Cr:ZnSe and Cr:ZnS lasers based on identical gamma-irradiated and non-irradiated crystals featured a very similar pump thresholds, slope efficiencies, and output powers.

  19. Vacancy formation and extraction energies in semiconductor compounds and alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.

    1990-01-01

    A model for calculating the extraction energies and vacancy-formation energies in diamond-cubic and zinc-blende semiconductors is developed on the basis of Harrison's (1980, 1983) tight-binding theory. The extraction energies provide a reference from which other final states of the removed atoms can be calculated. The results of calculations show that, in a given compound, the calculated extraction energies are larger for the anion than for the cation, with the difference between the cation and the anion being larger in the II-VI than in the III-V compounds. This is in agreement with experimental results.

  20. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  1. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

    PubMed

    Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

    2013-03-26

    We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

  2. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  3. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  4. Colloidal Nanocrystals Fluoresced by Surface Coordination Complexes

    PubMed Central

    Wang, Guan; Ji, Jianwei; Zhang, Xinwen; Zhang, Yan; Wang, Qiangbin; You, Xiaozeng; Xu, Xiangxing

    2014-01-01

    Colloidal Nanocrystals (NCs) with fluorescence originating from surface complexes are successfully prepared. The components of these NCs range from insulator, semiconductor to metal, with either pure phase, doped or core/shell structures. The photoluminescence of these NCs can be reversibly tuned across the visible to infrared spectrum, and even allow multi-color emission. A light emitting device is fabricated and a new in vivo cell imaging method is performed to demonstrate the power of this technology for emerging applications. PMID:24970242

  5. Colloidal nanocrystals fluoresced by surface coordination complexes.

    PubMed

    Wang, Guan; Ji, Jianwei; Zhang, Xinwen; Zhang, Yan; Wang, Qiangbin; You, Xiaozeng; Xu, Xiangxing

    2014-06-27

    Colloidal Nanocrystals (NCs) with fluorescence originating from surface complexes are successfully prepared. The components of these NCs range from insulator, semiconductor to metal, with either pure phase, doped or core/shell structures. The photoluminescence of these NCs can be reversibly tuned across the visible to infrared spectrum, and even allow multi-color emission. A light emitting device is fabricated and a new in vivo cell imaging method is performed to demonstrate the power of this technology for emerging applications.

  6. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.

  7. Fabrication and electronic transport studies of single nanocrystal systems

    SciTech Connect

    Klein, David Louis

    1997-05-01

    Semiconductor and metallic nanocrystals exhibit interesting electronic transport behavior as a result of electrostatic and quantum mechanical confinement effects. These effects can be studied to learn about the nature of electronic states in these systems. This thesis describes several techniques for the electronic study of nanocrystals. The primary focus is the development of novel methods to attach leads to prefabricated nanocrystals. This is because, while nanocrystals can be readily synthesized from a variety of materials with excellent size control, means to make electrical contact to these nanocrystals are limited. The first approach that will be described uses scanning probe microscopy to first image and then electrically probe surfaces. It is found that electronic investigations of nanocrystals by this technique are complicated by tip-sample interactions and environmental factors such as salvation and capillary forces. Next, an atomic force microscope technique for the catalytic patterning of the surface of a self assembled monolayer is described. In principle, this nano-fabrication technique can be used to create electronic devices which are based upon complex arrangements of nanocrystals. Finally, the fabrication and electrical characterization of a nanocrystal-based single electron transistor is presented. This device is fabricated using a hybrid scheme which combines electron beam lithography and wet chemistry to bind single nanocrystals in tunneling contact between closely spaced metallic leads. In these devices, both Au and CdSe nanocrystals show Coulomb blockade effects with characteristic energies of several tens of meV. Additional structure is seen the transport behavior of CdSe nanocrystals as a result of its electronic structure.

  8. Synthesis of new nanocrystal materials

    NASA Astrophysics Data System (ADS)

    Hassan, Yasser Hassan Abd El-Fattah

    Colloidal semiconductor nanocrystals (NCs) have sparked great excitement in the scientific community in last two decades. NCs are useful for both fundamental research and technical applications in various fields owing to their size and shape-dependent properties and their potentially inexpensive and excellent chemical processability. These NCs are versatile fluorescence probes with unique optical properties, including tunable luminescence, high extinction coefficient, broad absorption with narrow photoluminescence, and photobleaching resistance. In the past few years, a lot of attention has been given to nanotechnology based on using these materials as building blocks to design light harvesting assemblies. For instant, the pioneering applications of NCs are light-emitting diodes, lasers, and photovoltaic devices. Synthesis of the colloidal stable semiconductor NCs using the wet method of the pyrolysis of organometallic and chalcogenide precursors, known as hot-injection approach, is the chart-topping preparation method in term of high quality and monodisperse sized NCs. The advancement in the synthesis of these artificial materials is the core step toward their applications in a broad range of technologies. This dissertation focuses on exploring various innovative and novel synthetic methods of different types of colloidal nanocrystals, both inorganic semiconductors NCs, also known as quantum dots (QDs), and organic-inorganic metal halide-perovskite materials, known as perovskites. The work presented in this thesis focuses on pursuing fundamental understanding of the synthesis, material properties, photophysics, and spectroscopy of these nanostructured semiconductor materials. This thesis contains 6 chapters and conclusions. Chapters 1?3 focus on introducing theories and background of the materials being synthesized in the thesis. Chapter 4 demonstrates our synthesis of colloidal linker--free TiO2/CdSe NRs heterostructures with CdSe QDs grown in the presence of Ti

  9. Surface chemical modification of nanocrystals

    DOEpatents

    Helms, Brett Anthony; Milliron, Delia Jane; Rosen, Evelyn Louise; Buonsanti, Raffaella; Llordes, Anna

    2017-03-14

    Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces.

  10. Low temperature thin films formed from nanocrystal precursors

    DOEpatents

    Alivisatos, A. Paul; Goldstein, Avery N.

    1993-01-01

    Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.

  11. Low temperature thin films formed from nanocrystal precursors

    DOEpatents

    Alivisatos, A.P.; Goldstein, A.N.

    1993-11-16

    Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.

  12. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  13. Electron states in semiconductor quantum dots

    SciTech Connect

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  14. Highly Emissive Transition Metal Ion Doped Semiconducting Nanocrystals

    NASA Astrophysics Data System (ADS)

    Jana, Santanu; Srivastava, Bhupendra B.; Sarma, D. D.; Pradhan, Narayan

    2011-07-01

    Doped semiconductor nanocrystals (d-dots), specifically ones not containing heavy metal ions, have the potential to become a class of mainstream emissive materials. Mn- and Cu-doped ZnSe or ZnS d-dots can cover an emission window similar to that of the current workhorse of intrinsic quantum dot (q-dots) emitters, CdSe nanocrystals. We synthesized high quality stable Cu doped ZnSe in nonpolar as well as polar solvent. The emission intensity of these doped nanocrystals is found stable for months under UV irradiation, after different multifunctional ligand which is important for any biological detection. We have also synthesized the stable Mn doped ZnS in nonpolar solvent more than 50% QY.. The doped nanocrystals are characterized by TEM, XRD, EPR and ICP analysis.

  15. Mn-Doped Multinary CIZS and AIZS Nanocrystals.

    PubMed

    Manna, Goutam; Jana, Santanu; Bose, Riya; Pradhan, Narayan

    2012-09-20

    Multinary nanocrystals (CuInS2, CIS, and AgInS2, AIS) are widely known for their strong defect state emission. On alloying with Zn (CIZS and AIZS), stable and intense emission tunable in visible and NIR windows has already been achieved. In these nanocrystals, the photogenerated hole efficiently moves to the defect-induced state and recombines with the electron in the conduction band. As a result, the defect state emission is predominantly observed without any band edge excitonic emission. Herein, we report the doping of the transition-metal ion Mn in these nanocrystals, which in certain compositions of the host nanocrystals quenches this strong defect state emission and predominantly shows the spin-flip Mn emission. Though several Mn-doped semiconductor nanocrystals are reported in the literature, these nanocrystals are of its first kind that can be excited in the visible window, do not contain the toxic element Cd, and provide efficient emission. Hence, when Mn emission is required, these multinary nanocrystals can be the ideal versatile materials for widespread technological applications.

  16. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  17. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  18. 3D Nanostructuring of Semiconductors

    NASA Astrophysics Data System (ADS)

    Blick, Robert

    2000-03-01

    Modern semiconductor technology allows to machine devices on the nanometer scale. I will discuss the current limits of the fabrication processes, which enable the definition of single electron transistors with dimensions down to 8 nm. In addition to the conventional 2D patterning and structuring of semiconductors, I will demonstrate how to apply 3D nanostructuring techniques to build freely suspended single-crystal beams with lateral dimension down to 20 nm. In transport measurements in the temperature range from 30 mK up to 100 K these nano-crystals are characterized regarding their electronic as well as their mechanical properties. Moreover, I will present possible applications of these devices.

  19. Chelating ligands for nanocrystals' surface functionalization.

    PubMed

    Querner, Claudia; Reiss, Peter; Bleuse, Joël; Pron, Adam

    2004-09-22

    A new family of ligands for the surface functionalization of CdSe nanocrystals is proposed, namely alkyl or aryl derivatives of carbodithioic acids (R-C(S)SH). The main advantages of these new ligands are as follows: they nearly quantitatively exchange the initial surface ligands (TOPO) in very mild conditions; they significantly improve the resistance of nanocrystals against photooxidation because of their ability of strong chelate-type binding to metal atoms; their relatively simple preparation via Grignard intermediates facilitates the development of new bifunctional ligands containing, in addition to the anchoring carbodithioate group, a second function, which enables the grafting of molecules or macromolecules of interest on the nanocrystal surface. To give an example of this approach, we report, for the first time, the grafting of an electroactive oligomer from the polyaniline family-aniline tetramer-on CdSe nanocrystals after their functionalization with 4-formyldithiobenzoic acid. The grafting proceeds via a condensation reaction between the aldehyde group of the ligand and the terminal primary amine group of the tetramer. The resulting organic/inorganic hybrid exhibits complete extinction of the fluorescence of its constituents, indicating efficient charge or energy transfer between the organic and the inorganic semiconductors.

  20. Conjugated polymer/nanocrystal nanocomposites for renewable energy applications in photovoltaics and photocatalysis.

    PubMed

    Su, Yu-Wei; Lin, Wei-Hao; Hsu, Yung-Jung; Wei, Kung-Hwa

    2014-11-01

    Conjugated polymer/nanocrystal composites have attracted much attention for use in renewable energy applications because of their versatile and synergistic optical and electronic properties. Upon absorbing photons, charge separation occurs in the nanocrystals, generating electrons and holes for photocurrent flow or reduction/oxidation (redox) reactions under proper conditions. Incorporating these nanocrystals into conjugated polymers can complement the visible light absorption range of the polymers for photovoltaics applications or allow the polymers to sensitize or immobilize the nanocrystals for photocatalysis. Here, the current developments of conjugated polymer/nanocrystal nanocomposites for bulk heterojunction-type photovoltaics incorporating Cd- and Pb-based nanocrystals or quantum dots are reviewed. The effects of manipulating the organic ligands and the concentration of the nanocrystal precursor, critical factors that affect the shape and aggregation of the nanocrystals, are also discussed. In the conclusion, the mechanisms through which conjugated polymers can sensitize semiconductor nanocrystals (TiO2 , ZnO) to ensure efficient charge separation, as well as how they can support immobilized nanocrystals for use in photocatalysis, are addressed.

  1. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    SciTech Connect

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.

  2. Biomineralization: Nanocrystals by design

    NASA Astrophysics Data System (ADS)

    Shang, Li; Nienhaus, Gerd Ulrich

    2015-10-01

    Nanocrystals with precisely defined structures offer promise as components of advanced materials yet they are challenging to create. Now, a nanocrystal made up of seven cadmium and twelve chloride ions has been synthesized via a biotemplating approach that uses a de novo designed protein.

  3. Silicon Nanocrystal Laser

    SciTech Connect

    Yu, J

    2005-03-09

    The purpose of this feasibility study project was to attempt to demonstrate the silicon-nanocrystal-based laser. Such a silicon laser (made using conventional silicon-manufacturing technologies) would provide the crucial missing link that would enable a completely-silicon-based photonic system. We prepared thin layers of silicon nanocrystal material by ion-implanting Si in fused silica substrates, followed by a high temperature anneal process. These Si nanocrystals produced intense photoluminescence when optically pumped with ultraviolet light. Laser structures based on Fabry-Perot cavity and distributed feedback (DFB) designs were fabricated using the Si nanocrystals as the ''lasing'' medium. We optically pumped the samples with CW lasers at 413nm wavelength to quickly assess the feasibility of making lasers out of the Nanocrystal Si material and to verify the gain coefficients reported by other research groups.

  4. Energy Transfer between Conjugated Colloidal Ga₂O₃ and CdSe/CdS Core/Shell Nanocrystals for White Light Emitting Applications.

    PubMed

    Stanish, Paul C; Radovanovic, Pavle V

    2016-02-15

    Developing solid state materials capable of generating homogeneous white light in an energy efficient and resource-sustainable way is central to the design of new and improved devices for various lighting applications. Most currently-used phosphors depend on strategically important rare earth elements, and rely on a multicomponent approach, which produces sub-optimal quality white light. Here, we report the design and preparation of a colloidal white-light emitting nanocrystal conjugate. This conjugate is obtained by linking colloidal Ga₂O₃ and II-VI nanocrystals in the solution phase with a short bifunctional organic molecule (thioglycolic acid). The two types of nanocrystals are electronically coupled by Förster resonance energy transfer owing to the short separation between Ga₂O₃ (energy donor) and core/shell CdSe/CdS (energy acceptor) nanocrystals, and the spectral overlap between the photoluminescence of the donor and the absorption of the acceptor. Using steady state and time-resolved photoluminescence spectroscopies, we quantified the contribution of the energy transfer to the photoluminescence spectral power distribution and the corresponding chromaticity of this nanocrystal conjugate. Quantitative understanding of this new system allows for tuning of the emission color and the design of quasi-single white light emitting inorganic phosphors without the use of rare-earth elements.

  5. Functionalization of semiconductors for biosensing applications

    NASA Astrophysics Data System (ADS)

    Estephan, E.; Larroque, C.; Martineau, P.; Cloitre, T.; Gergely, Cs.

    2007-05-01

    Functionalization of semiconductors (SC) has been widely used for various electronic, photonic and biomedical applications. In this paper, we report on selective functionalization achieved by peptides that reveal specific recognition of the SC surfaces. A M13 bacteriophage library was used to screen 10 10 different 12-mer peptide on various SC substrates to successfully isolate after 3 cycles one specific peptide for the majority of semiconductors. Our results conclude that GaAs(100) and GaN(0001) retain the same sequence of 12-mer peptide, suggesting that the specificity does not depend on the crystallographic structure but it depends on the chemical composition and the electronegativity of the surface, thus on the orientation of the material. We also note the presence of at least one proline (Pro) amino acid in each peptide, and the presence of the histidine (His) in the specific peptides for the II-VI class SC. Pro imprints a constraint to the peptide to facilitate adhesion to the surface, whereas the basic side chain His is known for its affinity towards some of the elements of class II SC. Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide to their specific SC surface in close proximity to a surface of different chemical and structural composition. The use of selected peptides expressed by phage display can be extended to encompass a variety of nanostructured semiconductor based devices.

  6. Optical activity of chirally distorted nanocrystals

    NASA Astrophysics Data System (ADS)

    Tepliakov, Nikita V.; Baimuratov, Anvar S.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2016-05-01

    We develop a general theory of optical activity of semiconductor nanocrystals whose chirality is induced by a small perturbation of their otherwise achiral electronic subsystems. The optical activity is described using the quantum-mechanical expressions for the rotatory strengths and dissymmetry factors introduced by Rosenfeld. We show that the rotatory strengths of optically active transitions are decomposed on electric dipole and magnetic dipole contributions, which correspond to the electric dipole and magnetic dipole transitions between the unperturbed quantum states. Remarkably, while the two kinds of rotatory strengths are of the same order of magnitude, the corresponding dissymmetry factors can differ by a factor of 105. By maximizing the dissymmetry of magnetic dipole absorption one can significantly enhance the enantioselectivity in the interaction of semiconductor nanocrystals with circularly polarized light. This feature may advance chiral and analytical methods, which will benefit biophysics, chemistry, and pharmaceutical science. The developed theory is illustrated by an example of intraband transitions inside a semiconductor nanocuboid, whose rotatory strengths and dissymmetry factors are calculated analytically.

  7. Predictive simulations of semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Galli, Giulia

    2005-03-01

    Ab-initio simulations are playing an increasingly important role in understanding matter at the nanoscale and in predicting with controllable, quantitative accuracy the novel and complex properties of nanomaterials. A microscopic, fundamental understanding of nanoscale phenomena is very much in demand, as experimental investigations are sometimes controversial and usually they cannot be explained on the basis of simple models. In this talk, ab-initio molecular dynamics simulations and quantum monte carlo calculations of semiconductor nanoparticles will be presented, with focus on electronic and optical properties and on the microscopic structure of surfaces at the nanoscale. The characterization of nanoscale surfaces and interfaces is of paramount importance to predict the function of nanomaterials, and eventually their assembly into macroscopic solids, and it is still very challenging from an experimental standpoint, due to the lack of appropriate imaging techniques. The presentation will focus on Si, Ge, SiC nanoparticles and nanodiamond, and in addition we will discuss several results for II-VI dots and rods. (*) Work done in collaboration with G.Cicero, E.Draeger, J.Grossman, F.Gygi, D.Prendergast, A.Puzder, J.-Y.Raty, F.Reboredo, E.Schwegler, A.Williamson This work was performed under the auspices of the US Department of Energy by the University of California at the LLNL under contract no W-7405-Eng-48

  8. Prospects of nanoscience with nanocrystals

    SciTech Connect

    Kovalenko, Maksym V.; Manna, Liberato; Cabot, Andreu; Hens, Zeger; Talapin, Dmitri V.; Kagan, Cherie R.; Klimov, Victor I.; Rogach, Andrey L.; Reiss, Peter; Milliron, Delia J.; Guyot-Sionnnest, Philippe; Konstantatos, Gerasimos; Parak, Wolfgang J.; Hyeon, Taeghwan; Korgel, Brian A.; Murray, Christopher B.; Heiss, Wolfgang

    2015-01-22

    Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. Furthermore, the performance of inorganic NC-based photovoltaic and lightemitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In our Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.

  9. Prospects of nanoscience with nanocrystals

    DOE PAGES

    Kovalenko, Maksym V.; Manna, Liberato; Cabot, Andreu; ...

    2015-01-22

    Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. Furthermore, the performance of inorganic NC-based photovoltaic and lightemitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where verymore » few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In our Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.« less

  10. Prospects of nanoscience with nanocrystals.

    PubMed

    Kovalenko, Maksym V; Manna, Liberato; Cabot, Andreu; Hens, Zeger; Talapin, Dmitri V; Kagan, Cherie R; Klimov, Victor I; Rogach, Andrey L; Reiss, Peter; Milliron, Delia J; Guyot-Sionnnest, Philippe; Konstantatos, Gerasimos; Parak, Wolfgang J; Hyeon, Taeghwan; Korgel, Brian A; Murray, Christopher B; Heiss, Wolfgang

    2015-02-24

    Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. The performance of inorganic NC-based photovoltaic and light-emitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In this Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.

  11. Frequency upconverted lasing of nanocrystal quantum dots in microbeads

    NASA Astrophysics Data System (ADS)

    Zhang, Chunfeng; Zhang, Fan; Cheng, An; Kimball, Brian; Wang, Andrew Y.; Xu, Jian

    2009-11-01

    Stable, frequency upconverted lasing of semiconductor nanocrystal quantum dots was demonstrated in silica microbeads under two-photon pumping conditions. Upon infrared excitation, the stimulated emission of the nanocrystal-doped microbeads exhibits sharp peaks at λ ˜610 nm with narrow line widths of ≤1 nm. The lasing action has been attributed to the biexciton gain coupled to the whispering gallery modes in spherical cavities, as confirmed by time-resolved photoluminescence spectra. The lasing lifetime characterized in term of pulse numbers (˜106 pulses) was two orders of magnitude longer than that of the dye salt-based two-photon lasers.

  12. Passivation effects in B doped self-assembled Si nanocrystals

    SciTech Connect

    Puthen Veettil, B. Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Zhang, Tian; Yang, Terry; Johnson, Craig; Conibeer, Gavin; Perez-Würfl, Ivan; McCamey, Dane

    2014-12-01

    Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes.

  13. Reversible solvent vapor-mediated phase changes in nanocrystal superlattices.

    PubMed

    Goodfellow, Brian W; Korgel, Brian A

    2011-04-26

    Colloidal nanocrystals are being explored for use in a variety of applications, from solar cells to transistors to medical diagnostics and therapy. Ordered assemblies of nanocrystals, or superlattices, are one particularly interesting class of these materials, in which the nanocrystals serve as modular building blocks to construct nanostructures by self-assembly with spatial and temporal complexity and unique properties. From a fundamental perspective, the nanocrystals are simple molecular models that can be manipulated and studied to test statistical mechanical and thermodynamic models of crystallization and disorder. An article by Bian et al. in this issue of ACS Nano reports surprising new phase behavior in semiconductor nanocrystal superlattices: reversible transitions between non-close-packed body-centered cubic (bcc) and body-centered tetragonal (bct) structures, and close-packed face-centered cubic (fcc) structures, observed by real-time in situ grazing incidence small-angle X-ray scattering (GISAXS) measurements, upon solvent vapor exposure and increased interparticle separation. These studies offer new insight and raise new questions about superlattice structure and the forces that control self-assembly. Accompanying computer simulations show that ligand-ligand interactions are important. Furthermore, it appears that ligand-coated nanocrystals have more in common with soft microphase-separated materials, like diblock copolymers and surfactant assemblies, than previously realized.

  14. Incorporating lanthanide cations with cadmium selenide nanocrystals: a strategy to sensitize and protect Tb(III).

    PubMed

    Chengelis, Demetra A; Yingling, Adrienne M; Badger, Paul D; Shade, Chad M; Petoud, Stéphane

    2005-12-07

    The electronic structure of CdSe semiconductor nanocrystals has been used to sensitize Tb3+ in solution by incorporation of Tb3+ cations into the nanocrystals during synthesis. Doping of luminescent Tb3+ metal ions in semiconductor nanocrystals utilizes the positive attributes of both species' photophysical properties, resulting in a final product with long luminescence lifetimes, sharp emission bands, high absorptivities, and strong resistance to decomposition. This strategy also helps protect the lanthanide cations from nonradiative deactivation from C-H, N-H, and O-H oscillators of solvent molecules or traditional organic lanthanide ligands, leading to long Tb3+ luminescence lifetimes. This new type of nanomaterial synergistically combines the photophysical properties of nanocrystals and Tb3+.

  15. Nonthermal plasma synthesis of metal sulfide nanocrystals from metalorganic vapor and elemental sulfur

    NASA Astrophysics Data System (ADS)

    Thimsen, Elijah; Kortshagen, Uwe R.; Aydil, Eray S.

    2015-08-01

    Nanocrystal synthesis in nonthermal plasmas has been focused on elemental group IV semiconductors such as Si and Ge. In contrast, very little is known about plasma synthesis of compound nanocrystals and the time is ripe to extend this synthesis approach to nanocrystals comprised of two or more elements such as metal sulfides, oxides and nitrides. Towards this end, we studied, in an argon-sulfur plasma, the synthesis of ZnS, Cu2S and SnS nanocrystals from metalorganic precursors diethyl Zn(II), hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane, and tetrakis(dimethylamido) Sn(IV), respectively. In situ optical emission spectroscopy was used to observe changes in relative concentrations of various plasma species during synthesis, while ex situ material characterization was used to examine the crystal structure, elemental composition and optical absorption of these nanocrystals. For a constant metalorganic vapor feed rate, the elemental composition of the nanocrystals was found to be independent of the sulfur flow rate into the plasma, above a small threshold value. At constant sulfur flow rate, the nanocrystal composition depended on the metalorganic vapor feed rate. Specifically, the ensemble metal atomic fraction in the nanocrystals was found to increase with increasing metalorganic vapor flow rates, resulting in more metal-rich crystal phases. The metalorganic feed rate can be used to control the composition and crystal phase of the metal-sulfide nanocrystals synthesized using this plasma process.

  16. On Ultrasmall Nanocrystals

    PubMed Central

    McBride, James R.; Dukes, Albert D.; Schreuder, Michael A.; Rosenthal, Sandra J.

    2010-01-01

    Ultrasmall nanocrystals are a growing sub-class of traditional nanocrystals that exhibit new properties at diameters typically below 2 nm. In this review, we define what constitutes an ultrasmall nanoparticle while distinguishing between ultrasmall and magic-size nanoparticles. After a brief overview of ultrasmall nanoparticles, including ultrasmall gold clusters, our recent work is presented covering the optical properties, structure, and application of ultrasmall CdSe nanocrystals. This unique material has potential application in solid state lighting due to its balanced white emission. This section is followed by a discussion on the blurring boundary between what can be considered a nanoparticle and a molecule. PMID:21132106

  17. Photothermal theragnosis synergistic therapy based on bimetal sulphide nanocrystals rather than nanocomposites.

    PubMed

    Li, Bo; Ye, Kaichuang; Zhang, Yuxin; Qin, Jinbao; Zou, Rujia; Xu, Kaibing; Huang, Xiaojuan; Xiao, Zhiyin; Zhang, Wenjun; Lu, Xinwu; Hu, Junqing

    2015-02-25

    A new generation of photothermal theranostic agents is developed based on Cu3BiS3 nanocrystals. A computed tomography imaging response and photothermal effect, as well as near-infrared fluorescence emission, can be simultaneously achieved through Cu3BiS3 nanocrystals rather than frequently used nanocomposites. These results provide some insight into the synergistic effect from bimetal sulphide semiconductor compounds for photothermal theragnosis therapy.

  18. Pyramidal and Chiral Groupings of Gold Nanocrystals Assembled Using DNA Scaffolds

    SciTech Connect

    Mastroianni, Alexander; Claridge, Shelley; Alivisatos, A. Paul

    2009-03-30

    Nanostructures constructed from metal and semiconductor nanocrystals conjugated to, and organized by DNA are an emerging class of material with collective optical properties. We created discrete pyramids of DNA with gold nanocrystals at the tips. By taking small angle X-ray scattering (SAXS) measurments from solutions of these pyramids we confirmed that this pyramidal geometry creates structures which are more rigid in solution than linear DNA. We then took advantage of the tetrahedral symmetry to demonstrate construction of chiral nanostructures.

  19. Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

    PubMed Central

    Wheeler, Lance M.; Neale, Nathan R.; Chen, Ting; Kortshagen, Uwe R.

    2013-01-01

    Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stability needed to cast thin films from solution, these ligands dramatically hinder charge carrier transport in the resulting film. Second, after a conductive film is achieved, doping has proven difficult for further control of the optoelectronic properties of the film. Here we report the ability to confront both of these challenges by exploiting the ability of silicon to engage in hypervalent interactions with hard donor molecules. For the first time, we demonstrate the significant potential of applying the interaction to the nanocrystal surface. In this study, hypervalent interactions are shown to provide colloidal stability as well as doping of silicon nanocrystals. PMID:23893292

  20. Solution based synthesis of simple fcc Si nano-crystals under ambient conditions.

    PubMed

    Balcı, Mustafa H; Sæterli, Ragnhild; Maria, Jerome; Lindgren, Mikael; Holmestad, Randi; Grande, Tor; Einarsrud, Mari-Ann

    2013-02-28

    We demonstrate for the first time that simple face-centered cubic (fcc) silicon nano-crystals can be produced by a solution based bottom-up synthesis route under ambient conditions. Simple fcc Si nano-crystals (2-7 nm) were prepared at room temperature by using sodium cyclopentadienide as a reducing agent for silicon tetrachloride. Photoluminescence emission at 550 nm was observed for the fcc silicon nano-crystals upon excitation at 340 nm, indicating that fcc Si nano-crystals were exhibiting direct bandgap like semiconductor properties with very fast radiative recombination rates. The new synthesis route makes possible the production and study of simple fcc polymorphs of Si nano-crystals with an easy alteration of surface termination groups.

  1. Application of quaternary phase diagrams to compound semiconductor processing

    SciTech Connect

    Sinclair, R.

    1994-10-01

    Isobaric, isothermal phase diagrams are a molar representation of condensed phases in equilibrium with each other at a fixed temperature, pressure, and composition. Since three or four elements are usually involved at a fabricated interface in a semiconductor device, knowledge of the appropriate ternary or quaternary phase diagram is important for optimizing the processing parameters and designing long term stability of devices. While the use of phase diagrams is well-established in the fields of metallurgy, ceramics and mineralogy, only recently have phase diagrams been employed to provide a framework for understanding thin film reactions on a substrate, encountered in semiconductor processing. Even though there are many examples of applications of ternary phase diagrams in the semiconductor literature (for instance, metallization of GaAs, the use of refractory metal silicides for metallization layers in VLSI devices and oxidation of III-V compounds), the same is not true for quaternary phase diagrams. To date, the only application is oxidation of mercury cadmium telluride. This lack of examples is not warranted, as four elements are often involved at a critical interface in compound semiconductor processing and devices. This paper reports on the progress made to remedy this situation by considering the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Moreover, for the first time, solid solubility is taken into account for quaternary phase diagrams of semiconductor systems.

  2. Luminescence nanocrystals for solar cell enhancement.

    PubMed

    Liu, Shu-Man; Chen, Wei; Wang, Zhan-Guo

    2010-03-01

    Semiconductor nanocrystals (NCs) prepared by wet-chemical routes have been proposed as an attractive candidate for fabrication of the third-generation thin-film solar cells due to their quantum confinement effects and excellent dispersion ability in polymer films. However, to date, a solar cell incorporating semiconductor NCs in the photoactive layer still has rather low efficiency due to the low carrier mobility of the non-continued NC phase and the possible radiative recombination in NCs. To avoid these disadvantages, NCs have been proposed and applied as a luminescent species in a passive photon converting layer to modify the solar spectrum before the light enters the photovoltaic device. Photon conversion processes, including up-conversion, down-conversion, and down-shifting, have been observed in various colloidal NC samples and have great potential to enhance photovoltaic performance when applied to the existing single-junction solar cells or narrow-band molecular-based devices.

  3. Nanocrystal-Powered Nanomotor

    SciTech Connect

    Regan, B.C.; Aloni, S.; Jensen, K.; Ritchie, R.O.; Zettl, A.

    2005-07-05

    We have constructed and operated a nanoscale linear motorpowered by a single metal nanocrystal ram sandwiched between mechanicallever arms. Low-level electrical voltages applied to the carbon nanotubelever arms cause the nanocrystal to grow or shrink in a controlledmanner. The length of the ram is adjustable from 0 to more than 150 nm,with extension speeds exceeding 1900 nm/s. The thermodynamic principlesgoverning motor operation resemble those driving frost heave, a naturalsolid-state linear motor.

  4. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  5. Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation

    NASA Astrophysics Data System (ADS)

    Wainstein, D.; Kovalev, A.; Tetelbaum, D.; Mikhailov, A.; Bulutay, C.; Aydinli, A.

    2008-03-01

    The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si nanocrystals in sapphire matrix were formed by Si+ ion implantation with doses from 5×1016 to 3×1017 cm-2 at an accelerating voltage 100 kV and post-implantation annealing at 500 - 1100 °C for 2 hours. Depth distribution of lattice defects, impurities and Si nanocrystals, the peculiarities of interband electronic transitions were investigated by XPS and HREELS. The molecular orbitals and local electronic structure of the Al2O3 matrix with Si nanocrystals was calculated using an atomistic pseudopotential technique. The electronic structure of Si nanocrystals as determined from HREELS measurements is in good agreement with the theoretically calculated electronic structure for Si nanocrystals.

  6. 2009 Clusters, Nanocrystals & Nanostructures GRC

    SciTech Connect

    Lai-Sheng Wang

    2009-07-19

    For over thirty years, this Gordon Conference has been the premiere meeting for the field of cluster science, which studies the phenomena that arise when matter becomes small. During its history, participants have witnessed the discovery and development of many novel materials, including C60, carbon nanotubes, semiconductor and metal nanocrystals, and nanowires. In addition to addressing fundamental scientific questions related to these materials, the meeting has always included a discussion of their potential applications. Consequently, this conference has played a critical role in the birth and growth of nanoscience and engineering. The goal of the 2009 Gordon Conference is to continue the forward-looking tradition of this meeting and discuss the most recent advances in the field of clusters, nanocrystals, and nanostructures. As in past meetings, this will include new topics that broaden the field. In particular, a special emphasis will be placed on nanomaterials related to the efficient use, generation, or conversion of energy. For example, we anticipate presentations related to batteries, catalysts, photovoltaics, and thermoelectrics. In addition, we expect to address the controversy surrounding carrier multiplication with a session in which recent results addressing this phenomenon will be discussed and debated. The atmosphere of the conference, which emphasizes the presentation of unpublished results and lengthy discussion periods, ensures that attendees will enjoy a valuable and stimulating experience. Because only a limited number of participants are allowed to attend this conference, and oversubscription is anticipated, we encourage all interested researchers from academia, industry, and government institutions to apply as early as possible. An invitation is not required. We also encourage all attendees to submit their latest results for presentation at the poster sessions. We anticipate that several posters will be selected for 'hot topic' oral

  7. Quantum behavior of terahertz photoconductivity in silicon nanocrystals networks

    NASA Astrophysics Data System (ADS)

    Pushkarev, V.; Ostatnický, T.; Němec, H.; Chlouba, T.; Trojánek, F.; Malý, P.; Zacharias, M.; Gutsch, S.; Hiller, D.; Kužel, P.

    2017-03-01

    Quantum-size effects are essential for understanding the terahertz conductivity of semiconductor nanocrystals, particularly at low temperatures. We derived a quantum mechanical expression for the linear terahertz response of nanocrystals; its introduction into an appropriate effective medium model provides a comprehensive microscopic approach for the analysis of terahertz conductivity spectra as a function of frequency, temperature, and excitation fluence. We performed optical pump-terahertz probe experiments in multilayer Si quantum dot networks with various degrees of percolation at 300 and 20 K and with variable pump fluence (initial carrier density) over nearly three orders of magnitude. Our theoretical approach was successfully applied to quantitatively interpret all the measured data within a single model. A careful data analysis made it possible to assess the distribution of sizes of nanocrystals participating to the photoconduction. We show and justify that such conductivity-weighted distribution may differ from the size distribution obtained by standard analysis of transmission electron microscopy images.

  8. Optical Studies of Semiconductor Quantum Dots

    NASA Astrophysics Data System (ADS)

    Yükselici, H.; Allahverdi, Ç.; Aşıkoğlu, A.; Ünlü, H.; Baysal, A.; Çulha, M.; İnce, R.; İnce, A.; Feeney, M.; Athalin, H.

    Optical absorption (ABS), steady-state photoluminescence (PL), resonant Raman, and photoabsorption (PA) spectroscopies are employed to study quantum-size effects in II-VI semiconductor quantum dots (QDs) grown in glass samples. We observe a size-dependent shift in the energetic position of the first exciton peak and have examined the photoinduced evolution of the differential absorption spectra. The Raman shifts of the phonon modes are employed to monitor stoichiometric changes in the composition of the QDs during growth. Two sets of glass samples were prepared from color filters doped with CdS x Se1 - x and Zn x Cd1 - x Te. We analyze the optical properties of QDs through the ABS, PL, resonant Raman, and PA spectroscopies. The glass samples were prepared from commercially available semiconductor doped filters by a two-step thermal treatment. The average size of QDs is estimated from the energetic position of the first exciton peak in the ABS spectrum. A calculation based on a quantized-state effective mass model in the strong confinement regime predicts that the average radius of QDs in the glass samples ranges from 2.9 to 4.9 nm for CdTe and from 2.2 to 9.3 nm for CdS0. 08Se0. 92. We have also studied the nonlinear optical properties of QDs by reviewing the results of size-dependent photoinduced modulations in the first exciton band of CdTe QDs studied by PA spectroscopy.

  9. Dilute ferromagnetic semiconductors: Physics and spintronic structures

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Ohno, Hideo

    2014-01-01

    This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, IV-VI, V2-VI3, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

  10. Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures

    NASA Astrophysics Data System (ADS)

    Horváth, Zs. J.; Basa, P.; Molnár, K. Z.; Molnár, Gy.; Jászi, T.; Pap, A. E.

    2013-06-01

    Charge injection and retention behaviors of metal-nitride-oxide-silicon (MNOS) memory structures with Si or Ge nanocrystals embedded at a depth of 3 nm in the nitride layer were studied. The effect of Si nanocrystals on these properties was opposite in comparison with that of Ge nanocrystals. To understand the origin of these opposite effects, the influence of the oxide thickness and of the depth, size and location of semiconductor nanocrystals has been studied on the charging behavior of MNOS non-volatile memory structures by the calculation of electron and hole tunneling probabilities, and by the simulation of memory window, memory hysteresis and retention behavior. For MNOS structures it is obtained that the presence of nanocrystals enhances the charge injection resulting in better performance, but only for structures with thin tunnel oxide layer (below 3 nm), and if the nanocrystals are located close to the oxide/nitride interface. In the case of very high tunneling probability, i.e., of high tunneling currents the system approaches equilibrium and the memory behavior collapses. There is a narrow range of oxide thickness or depth of nanocrystals, where the charging properties change very fast. Retention exhibits a very sharp dependence on the oxide thickness and on depth of nanocrystals as well. Most part of the experimental results can be explained on the basis of the results of simulations.

  11. Synthesis and shape-tailoring of copper sulfide/indium sulfide-based nanocrystals.

    PubMed

    Han, Wei; Yi, Luoxin; Zhao, Nan; Tang, Aiwei; Gao, Mingyuan; Tang, Zhiyong

    2008-10-01

    Heterostructured Cu2S-In2S3 nanocrystals with various shapes and compositions were synthesized by a high-temperature precursor-injection method using the semiconductor nanocrystal Cu1.94S as a catalyst. The intrinsic cationic deficiencies formed at high temperature by Cu ions made the Cu1.94S nanocrystal a good candidate for catalyzing the nucleation and subsequent growth of In 2S3 nanocrystals, eventually leading to the formation of heterostructured Cu2S-In2S3 nanocrystals. Gelification of the reaction systems, which were composed of different types of nanocrystal precursors and solvent, was found to be a very effective measure for controlling the growth kinetics of the heterostructured particles. Consequently, matchsticklike Cu2S3-In2S3 heterostructured nanorods, teardroplike quasi-core/shell Cu2S@In2S3 nanocrystals, and pencil-like In2S3 nanorods were successfully obtained by manipulating the gelification of the reaction system; this formed a solid experimental basis for further discussion of the growth mechanisms for differently shaped and structured nanocrystals. By reaction with 1,10-phenanthroline, a reagent that strongly and selectively binds to Cu(+), a compositional transformation from binary matchsticklike Cu2S-In2S3 nanorods to pure In2S3 nanorods was successfully achieved.

  12. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    NASA Astrophysics Data System (ADS)

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.

  13. A Chemical Approach to 3-D Lithographic Patterning of Si and GeNanocrystals

    SciTech Connect

    Sharp, I.D.; Xu, Q.; Yi, D.O.; Liao, C.Y.; Ager III, J.W.; Beeman, J.W.; Yu, K.M.; Robinson, J.T.; Dubon, O.D.; Chrzan, D.C.; Haller, E.E.

    2005-12-12

    Ion implantation into silica followed by thermal annealingis an established growth method for Si and Ge nanocrystals. Wedemonstrate that growth of Group IV semiconductor nanocrystals can besuppressed by co-implantation of oxygen prior to annealing. For Sinanocrystals, at low Si/O dose ratios, oxygen co-implantation leads to areduction of the average nanocrystal size and a blue-shift of thephotoluminescence emission energy. For both Si and Ge nanocrystals, atlarger Si/O or Ge/O dose ratios, the implanted specie is oxidized andnanocrystals do not form. This chemical deactivation was utilized toachieve patterned growth of Si and Ge nanocrystals. Si was implanted intoa thin SiO2 film on a Si substrate followed by oxygen implantationthrough an electron beam lithographically defined stencil mask. Thermalannealing of the co-implanted structure yields two-dimensionallypatterned growth of Si nanocrystals under the masked regions. We applieda previously developed process to obtain exposed nanocrystals byselective HF etching of the silica matrix to these patterned structures.Atomic force microscopy (AFM) of etched structures revealed that exposednanocrystals are not laterally displaced from their original positionsduring the etching process. Therefore, this process provides a means ofachieving patterned structures of exposed nanocrystals. The possibilitiesfor scaling this chemical-based lithography process to smaller featuresand for extending it to 3-D patterning is discussed.

  14. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    PubMed Central

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic–organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current–voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode–nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  15. Nanocrystal Solar Cells

    SciTech Connect

    Gur, Ilan

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  16. A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

    PubMed Central

    2010-01-01

    Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V. PMID:20676200

  17. Designer Nanocrystal Materials for Photovoltaics

    NASA Astrophysics Data System (ADS)

    Kagan, Cherie

    Advances in synthetic methods allow a wide range of semiconductor nanocrystals (NCs) to be tailored in size and shape and to be used as building blocks in the design of NC solids. However, the long, insulating ligands commonly employed in the synthesis of colloidal NCs inhibit strong interparticle coupling and charge transport once NCs are assembled into the solids state as NC arrays. We will describe the range of short, compact ligand chemistries we employ to exchange the long, insulating ligands used in synthesis and to increase interparticle coupling. These ligand exchange processes can have a dramatic influence on NC surface chemistry as well as NC organization in the solids, showing examples of short-range order. Synergistically, we use 1) thermal evaporation and diffusion and 2) wet-chemical methods to introduce extrinsic impurities and non-stoichiometry to passivate surface traps and dope NC solids. NC coupling and doping provide control over the density of states and the carrier type, concentration, mobility, and lifetime, which we characterize by a range of electronic and spectroscopic techniques. We will describe the importance of engineering device interfaces to design NC materials for solar photovoltaics.

  18. Synthesis of nanocrystals and nanocrystal self-assembly

    NASA Astrophysics Data System (ADS)

    Chen, Zhuoying

    nanocrystals is presented. Different surfactants of amines, carboxylic acids, and alcohols were used to study the effect of size and morphological control over the nanocrystals. Techniques including X-ray diffraction, transmission electron microscopy, selected area electron diffraction, and high-resolution electron microscopy are used to examine crystallinity and morphology. Chapter 3. By investigating the self-assembly of cadmium selenide-gold (CdSe-Au) nanoparticle mixtures by transmission electron microscopy after solvent evaporation, the effect of solvents in the formation process of CdSe-Au binary nanoparticle superlattices (BNSLs) was studied. 1-dodecanethiol was found to be critical in generating conditions necessary for superlattice formation, prior to the other factors that likely determine structure, highlighting the dual role of this organic polar molecule as both ligand and high boiling point/crystallization solvent. The influence of thiol was investigated under various concentrations (and also compared with other less polar solvents) in order to determine optimized conditions for self-assembly, for which relatively large (> 1 mum2) areas of superlattices could be routinely formed. Depending on appropriate selection of the radius ratio, AuCu or CaCu 5 binary superlattices of CdSe-Au nanoparticles were generated. Chapter 4. The preparation of binary nanoparticle superlattices obtained by self-assembly of two different semiconductor quantum dots is presented. Such a system is a means to include two discretized, quantum-confined, and complimentary semiconductor units in close proximity, which might exhibit interesting charge transport properties for applications such as solar cells. From a range of possible structures predicted, we observe an exclusive preference for the formation of Cuboctahedral AB13 (Cuboctahedral modification of NaZn13) and AB5 (isostructural with CaCu5) structures in the system of 8.1 nm CdTe and 4.4 nm CdSe nanoparticles. To understand further

  19. Laser cooling of a semiconductor by 40 kelvin.

    PubMed

    Zhang, Jun; Li, Dehui; Chen, Renjie; Xiong, Qihua

    2013-01-24

    Optical irradiation accompanied by spontaneous anti-Stokes emission can lead to cooling of matter, in a phenomenon known as laser cooling, or optical refrigeration, which was proposed by Pringsheim in 1929. In gaseous matter, an extremely low temperature can be obtained in diluted atomic gases by Doppler cooling, and laser cooling of ultradense gas has been demonstrated by collisional redistribution of radiation. In solid-state materials, laser cooling is achieved by the annihilation of phonons, which are quanta of lattice vibrations, during anti-Stokes luminescence. Since the first experimental demonstration in glasses doped with rare-earth metals, considerable progress has been made, particularly in ytterbium-doped glasses or crystals: recently a record was set of cooling to about 110 kelvin from the ambient temperature, surpassing the thermoelectric Peltier cooler. It would be interesting to realize laser cooling in semiconductors, in which excitonic resonances dominate, rather than in systems doped with rare-earth metals, where atomic resonances dominate. However, so far no net cooling in semiconductors has been achieved despite much experimental and theoretical work, mainly on group-III-V gallium arsenide quantum wells. Here we report a net cooling by about 40 kelvin in a semiconductor using group-II-VI cadmium sulphide nanoribbons, or nanobelts, starting from 290 kelvin. We use a pump laser with a wavelength of 514 nanometres, and obtain an estimated cooling efficiency of about 1.3 per cent and an estimated cooling power of 180 microwatts. At 100 kelvin, 532-nm pumping leads to a net cooling of about 15 kelvin with a cooling efficiency of about 2.0 per cent. We attribute the net laser cooling in cadmium sulphide nanobelts to strong coupling between excitons and longitudinal optical phonons (LOPs), which allows the resonant annihilation of multiple LOPs in luminescence up-conversion processes, high external quantum efficiency and negligible background

  20. Simulation of optical excitation spectra of semiconductor nanowires within effective bond orbital model

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Mahmoud, Waleed E.

    2015-11-01

    Systematic studies of optical excitation spectra of semiconductor nanowires (including group IV, III-V, and II-VI materials) obtained by using an eight-band effective bond-orbital model (EBOM) are presented. A new set of EBOM parameters are determined which produce good band structures of zincblende semiconductors for the entire Brillouin zone, suitable for modeling the excitation spectra from infrared to ultraviolet. The band structures and optical excitation spectra, including both the interband and intraband transitions (for doped cases) are calculated. The calculations were done with the use of a symmetrized basis functions which transform according to the irreducible representations of the underlying point group. This can improve the computation efficiency by about two orders of magnitude. Thus, the electronic and optical properties of a large class of materials can be simulated.

  1. Oxide Nanocrystal Model Catalysts.

    PubMed

    Huang, Weixin

    2016-03-15

    Model catalysts with uniform and well-defined surface structures have been extensively employed to explore structure-property relationships of powder catalysts. Traditional oxide model catalysts are based on oxide single crystals and single crystal thin films, and the surface chemistry and catalysis are studied under ultrahigh-vacuum conditions. However, the acquired fundamental understandings often suffer from the "materials gap" and "pressure gap" when they are extended to the real world of powder catalysts working at atmospheric or higher pressures. Recent advances in colloidal synthesis have realized controlled synthesis of catalytic oxide nanocrystals with uniform and well-defined morphologies. These oxide nanocrystals consist of a novel type of oxide model catalyst whose surface chemistry and catalysis can be studied under the same conditions as working oxide catalysts. In this Account, the emerging concept of oxide nanocrystal model catalysts is demonstrated using our investigations of surface chemistry and catalysis of uniform and well-defined cuprous oxide nanocrystals and ceria nanocrystals. Cu2O cubes enclosed with the {100} crystal planes, Cu2O octahedra enclosed with the {111} crystal planes, and Cu2O rhombic dodecahedra enclosed with the {110} crystal planes exhibit distinct morphology-dependent surface reactivities and catalytic properties that can be well correlated with the surface compositions and structures of exposed crystal planes. Among these types of Cu2O nanocrystals, the octahedra are most reactive and catalytically active due to the presence of coordination-unsaturated (1-fold-coordinated) Cu on the exposed {111} crystal planes. The crystal-plane-controlled surface restructuring and catalytic activity of Cu2O nanocrystals were observed in CO oxidation with excess oxygen. In the propylene oxidation reaction with O2, 1-fold-coordinated Cu on Cu2O(111), 3-fold-coordinated O on Cu2O(110), and 2-fold-coordinated O on Cu2O(100) were identified

  2. Multiple exciton generation in colloidal silicon nanocrystals.

    PubMed

    Beard, Matthew C; Knutsen, Kelly P; Yu, Pingrong; Luther, Joseph M; Song, Qing; Metzger, Wyatt K; Ellingson, Randy J; Nozik, Arthur J

    2007-08-01

    Multiple exciton generation (MEG) is a process whereby multiple electron-hole pairs, or excitons, are produced upon absorption of a single photon in semiconductor nanocrystals (NCs) and represents a promising route to increased solar conversion efficiencies in single-junction photovoltaic cells. We report for the first time MEG yields in colloidal Si NCs using ultrafast transient absorption spectroscopy. We find the threshold photon energy for MEG in 9.5 nm diameter Si NCs (effective band gap identical with Eg = 1.20 eV) to be 2.4 +/- 0.1Eg and find an exciton-production quantum yield of 2.6 +/- 0.2 excitons per absorbed photon at 3.4Eg. While MEG has been previously reported in direct-gap semiconductor NCs of PbSe, PbS, PbTe, CdSe, and InAs, this represents the first report of MEG within indirect-gap semiconductor NCs. Furthermore, MEG is found in relatively large Si NCs (diameter equal to about twice the Bohr radius) such that the confinement energy is not large enough to produce a large blue-shift of the band gap (only 80 meV), but the Coulomb interaction is sufficiently enhanced to produce efficient MEG. Our findings are of particular importance because Si dominates the photovoltaic solar cell industry, presents no problems regarding abundance and accessibility within the Earth's crust, and poses no significant environmental problems regarding toxicity.

  3. Exciton Energy Transfer from Halide Terminated Nanocrystals to Graphene in Solar Photovoltaics

    NASA Astrophysics Data System (ADS)

    Ajayi, Obafunso; Abramson, Justin; Anderson, Nicholas; Owen, Jonathan; Zhao, Yue; Kim, Phillip; Gesuele, Felice; Wong, Chee Wei

    2011-03-01

    Graphene, a zero-gap semiconductor, has been identified as an ideal electrode for nanocrystal solar cell photovoltaic applications due to its high carrier mobility. Further advances in efficient current extraction are required towards this end. We investigate the resonant energy transfer dynamics between photoexcited nanocrystals and graphene, where the energy transfer rate is characterized by the fluorescent quenching of the quantum dots in the presence of graphene. Energy transfer has been shown to have a d -4 dependence on the nanocrystal distance from the graphene surface, with a correction due to blinking statistics. We investigate this relationship with single and few layer graphene. We study halide-terminated CdSe quantum dots; where the absence of the insulating outershell improves the electronic coupling of the donor-acceptor system leads to improved electron transfer. We observe quenching of the halide terminated nanocrystals on graphene, with the quenching factor ρ defined as IQ /IG (the relative intensities on quartz and graphene).

  4. Real-time magnetic resonance imaging and quantification of lipoprotein metabolism in vivo using nanocrystals.

    PubMed

    Bruns, Oliver T; Ittrich, Harald; Peldschus, Kersten; Kaul, Michael G; Tromsdorf, Ulrich I; Lauterwasser, Joachim; Nikolic, Marija S; Mollwitz, Birgit; Merkel, Martin; Bigall, Nadja C; Sapra, Sameer; Reimer, Rudolph; Hohenberg, Heinz; Weller, Horst; Eychmüller, Alexander; Adam, Gerhard; Beisiegel, Ulrike; Heeren, Joerg

    2009-03-01

    Semiconductor quantum dots and superparamagnetic iron oxide nanocrystals have physical properties that are well suited for biomedical imaging. Previously, we have shown that iron oxide nanocrystals embedded within the lipid core of micelles show optimized characteristics for quantitative imaging. Here, we embed quantum dots and superparamagnetic iron oxide nanocrystals in the core of lipoproteins--micelles that transport lipids and other hydrophobic substances in the blood--and show that it is possible to image and quantify the kinetics of lipoprotein metabolism in vivo using fluorescence and dynamic magnetic resonance imaging. The lipoproteins were taken up by liver cells in wild-type mice and displayed defective clearance in knock-out mice lacking a lipoprotein receptor or its ligand, indicating that the nanocrystals did not influence the specificity of the metabolic process. Using this strategy it is possible to study the clearance of lipoproteins in metabolic disorders and to improve the contrast in clinical imaging.

  5. Real-time magnetic resonance imaging and quantification of lipoprotein metabolism in vivo using nanocrystals

    NASA Astrophysics Data System (ADS)

    Bruns, Oliver T.; Ittrich, Harald; Peldschus, Kersten; Kaul, Michael G.; Tromsdorf, Ulrich I.; Lauterwasser, Joachim; Nikolic, Marija S.; Mollwitz, Birgit; Merkel, Martin; Bigall, Nadja C.; Sapra, Sameer; Reimer, Rudolph; Hohenberg, Heinz; Weller, Horst; Eychmüller, Alexander; Adam, Gerhard; Beisiegel, Ulrike; Heeren, Joerg

    2009-03-01

    Semiconductor quantum dots and superparamagnetic iron oxide nanocrystals have physical properties that are well suited for biomedical imaging. Previously, we have shown that iron oxide nanocrystals embedded within the lipid core of micelles show optimized characteristics for quantitative imaging. Here, we embed quantum dots and superparamagnetic iron oxide nanocrystals in the core of lipoproteins-micelles that transport lipids and other hydrophobic substances in the blood-and show that it is possible to image and quantify the kinetics of lipoprotein metabolism in vivo using fluorescence and dynamic magnetic resonance imaging. The lipoproteins were taken up by liver cells in wild-type mice and displayed defective clearance in knock-out mice lacking a lipoprotein receptor or its ligand, indicating that the nanocrystals did not influence the specificity of the metabolic process. Using this strategy it is possible to study the clearance of lipoproteins in metabolic disorders and to improve the contrast in clinical imaging.

  6. Deep level transient spectroscopy (DLTS) on colloidal-synthesized nanocrystal solids.

    PubMed

    Bozyigit, Deniz; Jakob, Michael; Yarema, Olesya; Wood, Vanessa

    2013-04-24

    We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of NT = 1.7 × 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.

  7. Dielectric properties of colloidal Gd2O3 nanocrystal films fabricated via electrophoretic deposition

    NASA Astrophysics Data System (ADS)

    Mahajan, S. V.; Dickerson, J. H.

    2010-03-01

    We investigated the dielectric characteristics of [Al/Gd2O3/Si] metal-oxide-semiconductor (MOS) capacitors, which were fabricated from films of gadolinium oxide (Gd2O3) nanocrystals used as the gate oxide layer. Electrophoretic deposition cast Gd2O3 nanocrystal films of different thicknesses by varying the concentration of the nanocrystal suspensions. Capacitance-voltage (C-V) measurements of the MOS capacitors exhibited hysteresis, which indicated potentially favorable charge-storage properties. The films' dielectric constant (κ =3.90), calculated from the C-V data, led to the packing density of nanocrystals within the film (66%), which is in the glassy regime approximated by randomly closed packed spheres.

  8. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

    PubMed

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

    2014-12-21

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

  9. Preparation of ternary Cd1- x Zn x S nanocrystals with tunable ultraviolet absorption by mechanical alloying

    NASA Astrophysics Data System (ADS)

    Zhang, Qi; Zhang, Huihui; Liu, Limin; Li, Shaohua; Murowchick, James B.; Wisner, Clarissa; Leventis, Nickolas; Peng, Zhonghua; Tan, Guolong

    2015-03-01

    Composition-tunable ternary Cd1- x Zn x S nanocrystals are among the most extensively studied alloyed semiconductor nanocrystals. However, they are almost exclusively prepared by wet chemical routes, which lead to surface-capped nanoparticles. Herein, we present a simple mechanical alloying process to prepare uncapped Zn1- x Cd x S nanocrystals throughout the entire composition range. The resulting nanocrystals have average sizes smaller than 9 nm, are chemically homogenous, and exhibit linear lattice parameter-composition and close-to-linear band-gap-composition relationships. Continuous lattice contraction of the Cd1- x Zn x S nanocrystals with the atomic Zn concentration results in a successional enlargement of their band gap energies expanding from the visible region to the ultraviolet (UV) region, demonstrating the ability for precise control of band gap engineering through composition tuning and mechanical alloying. [Figure not available: see fulltext.

  10. Rigid Biopolymer Nanocrystal Systems for Controlling Multicomponent Nanoparticle Assembly and Orientation in Thin Film Solar Cells

    SciTech Connect

    Cha, Jennifer

    2016-10-31

    We have discovered techniques to synthesize well-defined DN conjugated nanostructures that are stable in a wide variety of conditions needed for DNA mediated assembly. Starting from this, we have shown that DNA can be used to control the assembly and integration of semiconductor nanocrystals into thin film devices that show photovoltaic effects.

  11. Analytical modeling of localized surface plasmon resonance in heterostructure copper sulfide nanocrystals

    SciTech Connect

    Caldwell, Andrew H.; Ha, Don-Hyung; Robinson, Richard D.; Ding, Xiaoyue

    2014-10-28

    Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals is a relatively new field of investigation that promises greater tunability of plasmonic properties compared to metal nanoparticles. A novel process by which the LSPR in semiconductor nanocrystals can be altered is through heterostructure formation arising from solution-based cation exchange. Herein, we describe the development of an analytical model of LSPR in heterostructure copper sulfide-zinc sulfide nanocrystals synthesized via a cation exchange reaction between copper sulfide (Cu{sub 1.81}S) nanocrystals and Zn ions. The cation exchange reaction produces dual-interface, heterostructure nanocrystals in which the geometry of the copper sulfide phase can be tuned from a sphere to a thin disk separating symmetrically-grown sulfide (ZnS) grains. Drude model electronic conduction and Mie-Gans theory are applied to describe how the LSPR wavelength changes during cation exchange, taking into account the morphology evolution and changes to the local permittivity. The results of the modeling indicate that the presence of the ZnS grains has a significant effect on the out-of-plane LSPR mode. By comparing the results of the model to previous studies on solid-solid phase transformations of copper sulfide in these nanocrystals during cation exchange, we show that the carrier concentration is independent of the copper vacancy concentration dictated by its atomic phase. The evolution of the effective carrier concentration calculated from the model suggests that the out-of-plane resonance mode is dominant. The classical model was compared to a simplified quantum mechanical model which suggested that quantum mechanical effects become significant when the characteristic size is less than ∼8 nm. Overall, we find that the analytical models are not accurate for these heterostructured semiconductor nanocrystals, indicating the need for new model development for this emerging field.

  12. Tuning the magnetic properties of metal oxide nanocrystal heterostructures by cation exchange.

    PubMed

    Sytnyk, Mykhailo; Kirchschlager, Raimund; Bodnarchuk, Maryna I; Primetzhofer, Daniel; Kriegner, Dominik; Enser, Herbert; Stangl, Julian; Bauer, Peter; Voith, Michael; Hassel, Achim Walter; Krumeich, Frank; Ludwig, Frank; Meingast, Arno; Kothleitner, Gerald; Kovalenko, Maksym V; Heiss, Wolfgang

    2013-02-13

    For three types of colloidal magnetic nanocrystals, we demonstrate that postsynthetic cation exchange enables tuning of the nanocrystal's magnetic properties and achieving characteristics not obtainable by conventional synthetic routes. While the cation exchange procedure, performed in solution phase approach, was restricted so far to chalcogenide based semiconductor nanocrystals, here ferrite-based nanocrystals were subjected to a Fe(2+) to Co(2+) cation exchange procedure. This allows tracing of the compositional modifications by systematic and detailed magnetic characterization. In homogeneous magnetite nanocrystals and in gold/magnetite core shell nanocrystals the cation exchange increases the coercivity field, the remanence magnetization, as well as the superparamagnetic blocking temperature. For core/shell nanoheterostructures a selective doping of either the shell or predominantly of the core with Co(2+) is demonstrated. By applying the cation exchange to FeO/CoFe(2)O(4) core/shell nanocrystals the Neél temperature of the core material is increased and exchange-bias effects are enhanced so that vertical shifts of the hysteresis loops are obtained which are superior to those in any other system.

  13. Quantum Confinement Regimes in CdTe Nanocrystals Probed by Single Dot Spectroscopy: From Strong Confinement to the Bulk Limit.

    PubMed

    Tilchin, Jenya; Rabouw, Freddy T; Isarov, Maya; Vaxenburg, Roman; Van Dijk-Moes, Relinde J A; Lifshitz, Efrat; Vanmaekelbergh, Daniel

    2015-08-25

    Sufficiently large semiconductor nanocrystals are a useful model system to characterize bulk-like excitons, with the electron and hole bound predominantly by Coulomb interaction. We present optical characterization of excitons in individual giant CdTe nanocrystals with diameters up to 25.5 nm at 4.2 K under varying excitation power and magnetic field strength. We determine values for the biexciton binding energy, diamagnetic shift constant, and Landé g-factor, which approach the bulk values with increasing nanocrystal size.

  14. Research Update: Comparison of salt- and molecular-based iodine treatments of PbS nanocrystal solids for solar cells

    SciTech Connect

    Jähnig, Fabian; Bozyigit, Deniz; Yarema, Olesya; Wood, Vanessa

    2015-02-01

    Molecular- and salt-based chemical treatments are believed to passivate electronic trap states in nanocrystal-based semiconductors, which are considered promising for solar cells but suffer from high carrier recombination. Here, we compare the chemical, optical, and electronic properties of PbS nanocrystal-based solids treated with molecular iodine and tetrabutylammonium iodide. Surprisingly, both treatments increase—rather than decrease—the number density of trap states; however, the increase does not directly influence solar cell performance. We explain the origins of the observed impact on solar cell performance and the potential in using different chemical treatments to tune charge carrier dynamics in nanocrystal-solids.

  15. Cu-doped CdS and ZnS nanocrystals grown onto thiolated silica-gel

    NASA Astrophysics Data System (ADS)

    Andrade, George Ricardo Santana; Nascimento, Cristiane da Cunha; Xavier, Paulo Adriano; Costa, Silvanio Silverio Lopes; Costa, Luiz Pereira; Gimenez, Iara F.

    2014-11-01

    CdS and ZnS nanocrystals were grown over specific binding sites onto a thiolated silica-gel aiming to favor defect emission processes. This strategy was found to be effective in yielding ZnS nanocrystals with simultaneous blue and blue-green emissions owing to different types of defects. The effects of doping with copper ions have been observed on the photoluminescence properties. The intensity of defect-related emissions from both semiconductor nanocrystals increased with increasing dopant concentration from 0.25% to 1.5% copper, consistent with the presence of sulfur vacancies. Higher dopant concentrations lead to concentration quenching.

  16. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  17. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  18. New self-assembled nanocrystal micelles for biolabels and biosensors.

    SciTech Connect

    Tallant, David Robert; Wilson, Michael C. (University of New Mexico, Albuquerque, NM); Leve, Erik W. (University of New Mexico, Albuquerque, NM); Fan, Hongyou; Brinker, C. Jeffrey; Gabaldon, John (University of New Mexico, Albuquerque, NM); Scullin, Chessa (University of New Mexico, Albuquerque, NM)

    2005-12-01

    The ability of semiconductor nanocrystals (NCs) to display multiple (size-specific) colors simultaneously during a single, long term excitation holds great promise for their use in fluorescent bio-imaging. The main challenges of using nanocrystals as biolabels are achieving biocompatibility, low non-specific adsorption, and no aggregation. In addition, functional groups that can be used to further couple and conjugate with biospecies (proteins, DNAs, antibodies, etc.) are required. In this project, we invented a new route to the synthesis of water-soluble and biocompatible NCs. Our approach is to encapsulate as-synthesized, monosized, hydrophobic NCs within the hydrophobic cores of micelles composed of a mixture of surfactants and phospholipids containing head groups functionalized with polyethylene glycol (-PEG), -COOH, and NH{sub 2} groups. PEG provided biocompatibility and the other groups were used for further biofunctionalization. The resulting water-soluble metal and semiconductor NC-micelles preserve the optical properties of the original hydrophobic NCs. Semiconductor NCs emit the same color; they exhibit equal photoluminescence (PL) intensity under long-time laser irradiation (one week) ; and they exhibit the same PL lifetime (30-ns). The results from transmission electron microscopy and confocal fluorescent imaging indicate that water-soluble semiconductor NC-micelles are biocompatible and exhibit no aggregation in cells. We have extended the surfactant/lipid encapsulation techniques to synthesize water-soluble magnetic NC-micelles. Transmission electron microscopy results suggest that water-soluble magnetic NC-micelles exhibit no aggregation. The resulting NC-micelles preserve the magnetic properties of the original hydrophobic magnetic NCs. Viability studies conducted using yeast cells suggest that the magnetic nanocrystal-micelles are biocompatible. We have demonstrated, for the first time, that using external oscillating magnetic fields to manipulate

  19. Suppression of auger recombination in ""giant"" core/shell nanocrystals

    SciTech Connect

    Garcia Santamaria, Florencio; Vela, Javier; Schaller, Richard D; Hollingsworth, Jennifer A; Klimov, Victor I; Chen, Yongfen

    2009-01-01

    Many potential applications of semiconductor nanocrystals are hindered by nonradiative Auger recombination wherein the electron-hole (exciton) recombination energy is transferred to a third charge carrier. This process severely limits the lifetime and bandwidth of optical gain, leads to large nonradiative losses in light emitting diodes and photovoltaic cells, and is believed to be responsible for intermittency ('blinking') of emission from single nanocrystals. The development of nanostructures in which Auger recombination is suppressed has been a longstanding goal in colloidal nanocrystal research. Here, we demonstrate that such suppression is possible using so-called 'giant' nanocrystals that consist of a small CdSe core and a thick CdS shell. These nanostructures exhibit a very long biexciton lifetime ({approx}10 ns) that is likely dominated by radiative decay instead of non-radiative Auger recombination. As a result of suppressed Auger recombination, even high-order multiexcitons exhibit high emission efficiencies, which allows us to demonstrate optical amplification with an extraordinarily large bandwidth (>500 me V) and record low excitation thresholds.

  20. Precursor conversion kinetics and the nucleation of cadmium selenide nanocrystals.

    PubMed

    Owen, Jonathan S; Chan, Emory M; Liu, Haitao; Alivisatos, A Paul

    2010-12-29

    The kinetics of cadmium selenide (CdSe) nanocrystal formation was studied using UV-visible absorption spectroscopy integrated with an automated, high-throughput synthesis platform. Reaction of anhydrous cadmium octadecylphosphonate (Cd-ODPA) with alkylphosphine selenides (1, tri-n-octylphosphine selenide; 2, di-n-butylphenylphosphine selenide; 3, n-butyldiphenylphosphine selenide) in recrystallized tri-n-octylphosphine oxide was monitored by following the absorbance of CdSe at λ = 350 nm, where the extinction coefficient is independent of size, and the disappearance of the selenium precursor using {(1)H}(31)P NMR spectroscopy. Our results indicate that precursor conversion limits the rate of nanocrystal nucleation and growth. The initial precursor conversion rate (Q(o)) depends linearly on [1] (Q(o)(1) = 3.0-36 μM/s) and decreases as the number of aryl groups bound to phosphorus increases (1 > 2 > 3). Changes to Q(o) influence the final number of nanocrystals and thus control particle size. Using similar methods, we show that changing [ODPA] has a negligible influence on precursor reactivity while increasing the growth rate of nuclei, thereby decreasing the final number of nanocrystals. These results are interpreted in light of a mechanism where the precursors react in an irreversible step that supplies the reaction medium with a solute form of the semiconductor.

  1. Electrochemistry and electrogenerated chemiluminescence from silicon nanocrystal quantum dots.

    PubMed

    Ding, Zhifeng; Quinn, Bernadette M; Haram, Santosh K; Pell, Lindsay E; Korgel, Brian A; Bard, Allen J

    2002-05-17

    Reversible electrochemical injection of discrete numbers of electrons into sterically stabilized silicon nanocrystals (NCs) (approximately 2 to 4 nanometers in diameter) was observed by differential pulse voltammetry (DPV) in N,N'-dimethylformamide and acetonitrile. The electrochemical gap between the onset of electron injection and hole injection-related to the highest occupied and lowest unoccupied molecular orbitals-grew with decreasing nanocrystal size, and the DPV peak potentials above the onset for electron injection roughly correspond to expected Coulomb blockade or quantized double-layer charging energies. Electron transfer reactions between positively and negatively charged nanocrystals (or between charged nanocrystals and molecular redox-active coreactants) occurred that led to electron and hole annihilation, producing visible light. The electrogenerated chemiluminescence spectra exhibited a peak maximum at 640 nanometers, a significant red shift from the photoluminescence maximum (420 nanometers) of the same silicon NC solution. These results demonstrate that the chemical stability of silicon NCs could enable their use as redox-active macromolecular species with the combined optical and charging properties of semiconductor quantum dots.

  2. Nanocrystal waveguide (NOW) laser

    DOEpatents

    Simpson, John T.; Simpson, Marcus L.; Withrow, Stephen P.; White, Clark W.; Jaiswal, Supriya L.

    2005-02-08

    A solid state laser includes an optical waveguide and a laser cavity including at least one subwavelength mirror disposed in or on the optical waveguide. A plurality of photoluminescent nanocrystals are disposed in the laser cavity. The reflective subwavelength mirror can be a pair of subwavelength resonant gratings (SWG), a pair of photonic crystal structures (PC), or a distributed feedback structure. In the case of a pair of mirrors, a PC which is substantially transmissive at an operating wavelength of the laser can be disposed in the laser cavity between the subwavelength mirrors to improve the mode structure, coherence and overall efficiency of the laser. A method for forming a solid state laser includes the steps of providing an optical waveguide, creating a laser cavity in the optical waveguide by disposing at least one subwavelength mirror on or in the waveguide, and positioning a plurality of photoluminescent nanocrystals in the laser cavity.

  3. Synergetic effects of II-VI sensitization upon TiO{sub 2} for photoelectrochemical water splitting; a tri-layered structured scheme

    SciTech Connect

    Mumtaz, Asad; Mohamed, Norani Muti

    2014-10-24

    World's energy demands are growing on a higher scale increasing the need of more reliable and long term renewable energy resources. Efficient photo-electrochemical (PEC) devices based on novel nano-structured designs for solar-hydrogen generation need to be developed. This study provides an insight of the tri-layered-TiO2 based nanostructures. Observing the mechanism of hydrogen production, the comparison of the structural order during the synthesis is pronounced. The sequence in the tri-layered structure affects the photogenerated electron (e{sup −}) and hole (h{sup +}) pair transfer and separation. It is also discussed that not only the semiconductors band gaps alignment is important with respect to the water redox potential but also the interfacial regions. Quasi-Fermi-level adjustment at the interfacial regions plays a key role in deciding the solar to hydrogen efficiency. More efficient multicomponent semiconductor nano-design (MCSN) could be developed with the approach given in this study.

  4. Non-blinking semiconductor colloidal quantum dots for biology, optoelectronics and quantum optics.

    PubMed

    Spinicelli, Piernicola; Mahler, Benoit; Buil, Stéphanie; Quélin, Xavier; Dubertret, Benoit; Hermier, Jean-Pierre

    2009-04-14

    Twinkle, twinkle: The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. There are various approaches for obtaining non-blinking nanocrystals, one of which is to grow a thick coat of CdS on the CdSe core (see picture). Applications of this method in the fields of optoelectronic devices, biologic labelling and quantum information processing are discussed.The blinking of semiconductor colloidal nanocrystals is the main inconvenience of these bright nanoemitters. For some years, research on this phenomenon has demonstrated the possibility to progress beyond this problem by suppressing this fluorescence intermittency in various ways. After a brief overview on the microscopic mechanism of blinking, we review the various approaches used to obtain non-blinking nanocrystals and discuss the commitment of this crucial improvement to applications in the fields of optoelectronic devices, biologic labelling and quantum information processing.

  5. Surface-enhanced Raman spectroscopy of semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Milekhin, A. G.; Sveshnikova, L. L.; Duda, T. A.; Yeryukov, N. A.; Rodyakina, E. E.; Gutakovskii, A. K.; Batsanov, S. A.; Latyshev, A. V.; Zahn, D. R. T.

    2016-01-01

    We review our recent results concerning surface-enhanced Raman scattering (SERS) by confined optical and surface optical phonons in semiconductor nanostructures including CdS, CuS, GaN, and ZnO nanocrystals, GaN and ZnO nanorods, and AlN nanowires. Enhancement of Raman scattering by confined optical phonons as well as appearance of new Raman modes with the frequencies different from those in ZnO bulk attributed to surface optical modes is observed in a series of nanostructures having different morphology located in the vicinity of metal nanoclusters (Ag, Au, and Pt). Assignment of surface optical modes is based on calculations performed in the frame of the dielectric continuum model. It is established that SERS by phonons has a resonant character. A maximal enhancement by optical phonons as high as 730 is achieved for CdS nanocrystals in double resonant conditions at the coincidence of laser energy with that of electronic transitions in semiconductor nanocrystals and localized surface plasmon resonance in metal nanoclusters. Even a higher enhancement is observed for SERS by surface optical modes in ZnO nanocrystals (above 104). Surface enhanced Raman scattering is used for studying phonon spectrum in nanocrystal ensembles with an ultra-low areal density on metal plasmonic nanostructures.

  6. Ultrahigh resolution multicolor colocalization of single fluorescent nanocrystals

    SciTech Connect

    Michalet, X.; Lacoste, T.D.; Pinaud, F.; Chemla, D.S.; Alivisatos, A.P.; Weiss, S.

    2000-12-20

    A new method for in vitro and possibly in vivo ultrahigh-resolution colocalization and distance measurement between biomolecules is described, based on semiconductor nanocrystal probes. This ruler bridges the gap between FRET and far-field (or near-field scanning optical microscope) imaging and has a dynamic range from few nanometers to tens of micrometers. The ruler is based on a stage-scanning confocal microscope that allows the simultaneous excitation and localization of the excitation point-spread-function (PSF) of various colors nanocrystals while maintaining perfect registry between the channels. Fit of the observed diffraction and photophysics-limited images of the PSFs with a two-dimensional Gaussian allows one to determine their position with nanometer accuracy. This new high-resolution tool opens new windows in various molecular, cell biology and biotechnology applications.

  7. Tuning Equilibrium Compositions in Colloidal Cd1-xMnxSe Nanocrystals Using Diffusion Doping and Cation Exchange.

    PubMed

    Barrows, Charles J; Chakraborty, Pradip; Kornowske, Lindsey M; Gamelin, Daniel R

    2016-01-26

    The physical properties of semiconductor nanocrystals can be tuned dramatically via composition control. Here, we report a detailed investigation of the synthesis of high-quality colloidal Cd1-xMnxSe nanocrystals by diffusion doping of preformed CdSe nanocrystals. Until recently, Cd1-xMnxSe nanocrystals proved elusive because of kinetic incompatibilities between Mn(2+) and Cd(2+) chemistries. Diffusion doping allows Cd1-xMnxSe nanocrystals to be prepared under thermodynamic rather than kinetic control, allowing access to broader composition ranges. We now investigate this chemistry as a model system for understanding the characteristics of nanocrystal diffusion doping more deeply. From the present work, a Se(2-)-limited reaction regime is identified, in which Mn(2+) diffusion into CdSe nanocrystals is gated by added Se(2-), and equilibrium compositions are proportional to the amount of added Se(2-). At large added Se(2-) concentrations, a solubility-limited regime is also identified, in which x = xmax = ∼0.31, independent of the amount of added Se(2-). We further demonstrate that Mn(2+) in-diffusion can be reversed by cation exchange with Cd(2+) under exactly the same reaction conditions, purifying Cd1-xMnxSe nanocrystals back to CdSe nanocrystals with fine tunability. These chemistries offer exceptional composition control in Cd1-xMnxSe NCs, providing opportunities for fundamental studies of impurity diffusion in nanocrystals and for development of compositionally tuned nanocrystals with diverse applications ranging from solar energy conversion to spin-based photonics.

  8. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Petruska, Melissa A.; Klimov, Victor L.

    2007-06-05

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites.

  9. Method of synthesizing pyrite nanocrystals

    DOEpatents

    Wadia, Cyrus; Wu, Yue

    2013-04-23

    A method of synthesizing pyrite nanocrystals is disclosed which in one embodiment includes forming a solution of iron (III) diethyl dithiophosphate and tetra-alkyl-ammonium halide in water. The solution is heated under pressure. Pyrite nanocrystal particles are then recovered from the solution.

  10. Nanocrystal/sol-gel nanocomposites

    SciTech Connect

    Petruska, Melissa A; Klimov, Victor L

    2012-06-12

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites

  11. Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties.

    PubMed

    Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

    2016-06-02

    Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.

  12. Metal ions to control the morphology of semiconductor nanoparticles: copper selenide nanocubes.

    PubMed

    Li, Wenhua; Zamani, Reza; Ibáñez, Maria; Cadavid, Doris; Shavel, Alexey; Morante, Joan Ramon; Arbiol, Jordi; Cabot, Andreu

    2013-03-27

    Morphology is a key parameter in the design of novel nanocrystals and nanomaterials with controlled functional properties. Here, we demonstrate the potential of foreign metal ions to tune the morphology of colloidal semiconductor nanoparticles. We illustrate the underlying mechanism by preparing copper selenide nanocubes in the presence of Al ions. We further characterize the plasmonic properties of the obtained nanocrystals and demonstrate their potential as a platform to produce cubic nanoparticles with different composition by cation exchange.

  13. Mechanical Properties of Nanocrystal Supercrystals

    SciTech Connect

    Tam, Enrico; Podsiadlo, Paul; Shevchenko, Elena; Ogletree, D. Frank; Delplancke-Ogletree, Marie-Paule; Ashby, Paul D.

    2009-12-30

    Colloidal nanocrystals attract significant interest due to their potential applications in electronic, magnetic, and optical devices. Nanocrystal supercrystals (NCSCs) are particularly appealing for their well ordered structure and homogeneity. The interactions between organic ligands that passivate the inorganic nanocrystal cores critically influence their self-organization into supercrystals, By investigating the mechanical properties of supercrystals, we can directly characterize the particle-particle interactions in a well-defined geometry, and gain insight into both the self-assembly process and the potential applications of nanocrystal supercrystals. Here we report nanoindentation studies of well ordered lead-sulfide (Pbs) nanocrystal supercrystals. Their modulus and hardness were found to be similar to soft polymers at 1.7 GPa and 70 MPa respectively and the fractures toughness was 39 KPa/m1/2, revealing the extremely brittle nature of these materials.

  14. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Klimov, Victor L.; Petruska, Melissa A.

    2010-05-25

    The present invention is directed to a process for preparing a solid composite having colloidal nanocrystals dispersed within a sol-gel matrix, the process including admixing colloidal nanocrystals with an amphiphilic polymer including hydrophilic groups selected from the group consisting of --COOH, --OH, --SO.sub.3H, --NH.sub.2, and --PO.sub.3H.sub.2 within a solvent to form an alcohol-soluble colloidal nanocrystal-polymer complex, admixing the alcohol-soluble colloidal nanocrystal-polymer complex and a sol-gel precursor material, and, forming the solid composite from the admixture. The present invention is also directed to the resultant solid composites and to the alcohol-soluble colloidal nanocrystal-polymer complexes.

  15. Models of Mass Transport During Microgravity Crystal Growth of Alloyed Semiconductors in a Magnetic Field

    NASA Technical Reports Server (NTRS)

    Ma, Nancy

    2003-01-01

    Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals, are extremely important for optoelectronic devices. Currently, high-quality crystals of GeSi and of II-VI alloys can be grown by epitaxial processes, but the time required to grow a certain amount of single crystal is roughly 1,000 times longer than the time required for Bridgman growth from a melt. Recent rapid advances in optoelectronics have led to a great demand for more and larger crystals with fewer dislocations and other microdefects and with more uniform and controllable compositions. Currently, alloyed crystals grown by bulk methods have unacceptable levels of segregation in the composition of the crystal. Alloyed crystals are being grown by the Bridgman process in space in order to develop successful bulk-growth methods, with the hope that the technology will be equally successful on earth. Unfortunately some crystals grown in space still have unacceptable segregation, for example, due to residual accelerations. The application of a weak magnetic field during crystal growth in space may eliminate the undesirable segregation. Understanding and improving the bulk growth of alloyed semiconductors in microgravity is critically important. The purpose of this grant to to develop models of the unsteady species transport during the bulk growth of alloyed semiconductor crystals in the presence of a magnetic field in microgravity. The research supports experiments being conducted in the High Magnetic Field Solidification Facility at Marshall Space Flight Center (MSFC) and future experiments on the International Space Station.

  16. Quantification of the morphological transition in cadmium selenide nanocrystals as a function of reaction temperature

    NASA Astrophysics Data System (ADS)

    Cameron, Michael Tanner; Rogerson, Jordan A.; Blom, Douglas A.; Dukes, Albert D.

    2016-03-01

    Controlling the morphology of semiconductor nanocrystals has typically relied on controlling the concentration and species of surface ligands utilized in synthesis. Specific shapes, such as branched structures are of particular interest as the light harvesting and charge separating layer in a photovoltaic device. In this work we quantify how changes in the reaction temperature affect the resulting morphology of the nanocrystals. The narrowness of the temperature range over which the morphological transition occurred provides guidance to the tolerances necessary in the synthesis of CdSe utilized in commercial devices on a large scale.

  17. Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields

    SciTech Connect

    Gurinovich, L. I. Lutich, A. A.; Stupak, A. P.; Prislopsky, S. Ya.; Rusakov, E. K.; Artemyev, M. V.; Gaponenko, S. V.; Demir, H. V.

    2009-08-15

    It is found that the absorption and luminescence spectra of CdSe nanocrystals and nanorods depend on the external electric field. It is shown that the external electric field quenches the P-polarized photoluminescence of CdSe nanorods to a degree higher than the degree of field-induced quenching of the S-polarized photoluminescence. It is established that the nanocrystals are more sensitive to the external electric field than the nanorods. The effect of the external electric field on the luminescence properties of the semiconductor nanorods is discussed.

  18. Cu2ZnSnS4 nanocrystals and graphene quantum dots for photovoltaics.

    PubMed

    Wang, Jun; Xin, Xukai; Lin, Zhiqun

    2011-08-01

    Semiconductor quantum dots exhibit great potential for applications in next generation high efficiency, low cost solar cells because of their unique optoelectronic properties. Cu(2)ZnSnS(4) (CZTS) nanocrystals and graphene quantum dots (GQDs) have recently received much attention as building blocks for use in solar energy conversion due to their outstanding properties and advantageous characteristics, including high optical absorptivity, tunable bandgap, and earth abundant chemical composition. In this Feature Article, recent advances in the synthesis and utilization of CZTS nanocrystals and colloidal GQDs for photovoltaics are highlighted, followed by an outlook on the future research efforts in these areas.

  19. Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

  20. Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals.

    PubMed

    Li, Mingjie; Bhaumik, Saikat; Goh, Teck Wee; Kumar, Muduli Subas; Yantara, Natalia; Grätzel, Michael; Mhaisalkar, Subodh; Mathews, Nripan; Sum, Tze Chien

    2017-02-08

    Hot-carrier solar cells can overcome the Schottky-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ∼83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells.

  1. Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals

    NASA Astrophysics Data System (ADS)

    Li, Mingjie; Bhaumik, Saikat; Goh, Teck Wee; Kumar, Muduli Subas; Yantara, Natalia; Grätzel, Michael; Mhaisalkar, Subodh; Mathews, Nripan; Sum, Tze Chien

    2017-02-01

    Hot-carrier solar cells can overcome the Schottky-Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ~83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells.

  2. Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals

    PubMed Central

    Li, Mingjie; Bhaumik, Saikat; Goh, Teck Wee; Kumar, Muduli Subas; Yantara, Natalia; Grätzel, Michael; Mhaisalkar, Subodh; Mathews, Nripan; Sum, Tze Chien

    2017-01-01

    Hot-carrier solar cells can overcome the Schottky–Queisser limit by harvesting excess energy from hot carriers. Inorganic semiconductor nanocrystals are considered prime candidates. However, hot-carrier harvesting is compromised by competitive relaxation pathways (for example, intraband Auger process and defects) that overwhelm their phonon bottlenecks. Here we show colloidal halide perovskite nanocrystals transcend these limitations and exhibit around two orders slower hot-carrier cooling times and around four times larger hot-carrier temperatures than their bulk-film counterparts. Under low pump excitation, hot-carrier cooling mediated by a phonon bottleneck is surprisingly slower in smaller nanocrystals (contrasting with conventional nanocrystals). At high pump fluence, Auger heating dominates hot-carrier cooling, which is slower in larger nanocrystals (hitherto unobserved in conventional nanocrystals). Importantly, we demonstrate efficient room temperature hot-electrons extraction (up to ∼83%) by an energy-selective electron acceptor layer within 1 ps from surface-treated perovskite NCs thin films. These insights enable fresh approaches for extremely thin absorber and concentrator-type hot-carrier solar cells. PMID:28176882

  3. Tuning the Magnetic Properties of Metal Oxide Nanocrystal Heterostructures by Cation Exchange

    PubMed Central

    2013-01-01

    For three types of colloidal magnetic nanocrystals, we demonstrate that postsynthetic cation exchange enables tuning of the nanocrystal’s magnetic properties and achieving characteristics not obtainable by conventional synthetic routes. While the cation exchange procedure, performed in solution phase approach, was restricted so far to chalcogenide based semiconductor nanocrystals, here ferrite-based nanocrystals were subjected to a Fe2+ to Co2+ cation exchange procedure. This allows tracing of the compositional modifications by systematic and detailed magnetic characterization. In homogeneous magnetite nanocrystals and in gold/magnetite core shell nanocrystals the cation exchange increases the coercivity field, the remanence magnetization, as well as the superparamagnetic blocking temperature. For core/shell nanoheterostructures a selective doping of either the shell or predominantly of the core with Co2+ is demonstrated. By applying the cation exchange to FeO/CoFe2O4 core/shell nanocrystals the Neél temperature of the core material is increased and exchange-bias effects are enhanced so that vertical shifts of the hysteresis loops are obtained which are superior to those in any other system. PMID:23362940

  4. Modifying growth of perylene diimide nanocrystals with poly(3-hexyl thiophene) as additives

    NASA Astrophysics Data System (ADS)

    Bu, Laju; Hayward, Ryan

    2014-03-01

    The shape, size, and crystallinity of organic semiconductors play vital roles in their applications in optoelectronics. Various methods to control crystallization of organic semiconductors, including thermal/solvent annealing, addition of poor solvents, and chemical structure modification, have been applied to improve the performance of organic photovoltaics. While soluble additives controlled crystallization are commonly found in biomineralization, pharmaceutics, and food science, they have rarely been applied to organic semiconductors. Here, we show that a p-type polymer, P3HT, serves as a soluble additive in crystallization of a n-type semiconductor, perylene diimide (PDI), by preferentially adsorbing on lateral crystal faces, which reduce lateral growth of PDI crystals relative to longitudinal growth, yielding extended 1-D nanofibers. Upon subsequent crystallization of P3HT, the PDI nanofibers serve as efficient nucleation sties, resulting in shish-kebab like p/n heterostuctures. Using ultrasound to enhance nucleation of PDI crystals, variations in P3HT molecular weight and concentration, and sonication temperature, allow PDI nanocrystal size and uniformity to be tuned. The uniform PDI nanocrystals can act as seeds to crystallize additional PDI to get segmented nanocrystals.

  5. Harvesting solar energy by means of charge-separating nanocrystals and their solids.

    PubMed

    Diederich, Geoffrey; O'Connor, Timothy; Moroz, Pavel; Kinder, Erich; Kohn, Elena; Perera, Dimuthu; Lorek, Ryan; Lambright, Scott; Imboden, Martene; Zamkov, Mikhail

    2012-08-23

    Conjoining different semiconductor materials in a single nano-composite provides synthetic means for the development of novel optoelectronic materials offering a superior control over the spatial distribution of charge carriers across material interfaces. As this study demonstrates, a combination of donor-acceptor nanocrystal (NC) domains in a single nanoparticle can lead to the realization of efficient photocatalytic materials, while a layered assembly of donor- and acceptor-like nanocrystals films gives rise to photovoltaic materials. Initially the paper focuses on the synthesis of composite inorganic nanocrystals, comprising linearly stacked ZnSe, CdS, and Pt domains, which jointly promote photoinduced charge separation. These structures are used in aqueous solutions for the photocatalysis of water under solar radiation, resulting in the production of H2 gas. To enhance the photoinduced separation of charges, a nanorod morphology with a linear gradient originating from an intrinsic electric field is used. The inter-domain energetics are then optimized to drive photogenerated electrons toward the Pt catalytic site while expelling the holes to the surface of ZnSe domains for sacrificial regeneration (via methanol). Here we show that the only efficient way to produce hydrogen is to use electron-donating ligands to passivate the surface states by tuning the energy level alignment at the semiconductor-ligand interface. Stable and efficient reduction of water is allowed by these ligands due to the fact that they fill vacancies in the valence band of the semiconductor domain, preventing energetic holes from degrading it. Specifically, we show that the energy of the hole is transferred to the ligand moiety, leaving the semiconductor domain functional. This enables us to return the entire nanocrystal-ligand system to a functional state, when the ligands are degraded, by simply adding fresh ligands to the system. To promote a photovoltaic charge separation, we use a

  6. Cellulose nanocrystal submonolayers by spin coating.

    PubMed

    Kontturi, Eero; Johansson, Leena-Sisko; Kontturi, Katri S; Ahonen, Päivi; Thüne, Peter C; Laine, Janne

    2007-09-11

    Dilute concentrations of cellulose nanocrystal solutions were spin coated onto different substrates to investigate the effect of the substrate on the nanocrystal submonolayers. Three substrates were probed: silica, titania, and amorphous cellulose. According to atomic force microscopy (AFM) images, anionic cellulose nanocrystals formed small aggregates on the anionic silica substrate, whereas a uniform two-dimensional distribution of nanocrystals was achieved on the cationic titania substrate. The uniform distribution of cellulose nanocrystal submonolayers on titania is an important factor when dimensional analysis of the nanocrystals is desired. Furthermore, the amount of nanocrystals deposited on titania was multifold in comparison to the amounts on silica, as revealed by AFM image analysis and X-ray photoelectron spectroscopy. Amorphous cellulose, the third substrate, resulted in a somewhat homogeneous distribution of the nanocrystal submonolayers, but the amounts were as low as those on the silica substrate. These differences in the cellulose nanocrystal deposition were attributed to electrostatic effects: anionic cellulose nanocrystals are adsorbed on cationic titania in addition to the normal spin coating deposition. The anionic silica surface, on the other hand, causes aggregation of the weakly anionic cellulose nanocrystals which are forced on the repulsive substrate by spin coating. The electrostatically driven adsorption also influences the film thickness of continuous ultrathin films of cellulose nanocrystals. The thicker films of charged nanocrystals on a substrate of opposite charge means that the film thickness is not independent of the substrate when spin coating cellulose nanocrystals in the ultrathin regime (<100 nm).

  7. Si nanocrystals and nanocrystal interfaces studied by positron annihilation

    NASA Astrophysics Data System (ADS)

    Kujala, J.; Slotte, J.; Tuomisto, F.; Hiller, D.; Zacharias, M.

    2016-10-01

    Si nanocrystals embedded in a SiO 2 matrix were studied with positron annihilation and photoluminescence spectroscopies. Analysis of the S- and W-parameters for the sample annealed at 800 °C reveals a positron trap at the interface between the amorphous nanodots and the surrounding matrix. Another trap state is observed in the 1150 °C heat treated samples where nanodots are in a crystalline form. Positrons are most likely trapped to defects related to dangling bonds at the surface of the nanocrystals. Passivation of the samples results on one hand in the decrease of the S-parameter implying a decrease in the open volume of the interface state and, on the other hand, in the strengthening of the positron annihilation signal from the interface. The intensity of the photoluminescence signal increases with the formation of the nanocrystals. Passivation of samples strengthens the photoluminescence signal, further indicating a successful deactivation of luminescence quenching at the nanocrystal surface. Strengthening of the positron annihilation signal and an increase in the photoluminescence intensity in passivated silicon nanocrystals suggests that the positron trap at the interface does not contribute to a significant extent to the exciton recombination in the nanocrystals.

  8. Microwave induced center-doping of silver ions in aqueous CdS nanocrystals with tunable, impurity and visible emission.

    PubMed

    Shen, Qihui; Liu, Yan; Xu, Jun; Meng, Changgong; Liu, Xiaoyang

    2010-08-21

    Under microwave radiation, Ag(+)-doped CdS semiconductor nanocrystals with high photoluminescence quantum yield (approximately 58%) and a surprisingly large optical window (480 to 630 nm) are formed controllably using a center-doping strategy and are optimized through a green approach in pure water solution.

  9. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  10. Solid-state semiconductor optical cryocooler based on CdS nanobelts.

    PubMed

    Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

    2014-08-13

    We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

  11. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  12. Monte Carlo simulations of diluted magnetic semiconductors using ab initio exchange parameters.

    PubMed

    Nayak, S K; Ogura, M; Hucht, A; Akai, H; Entel, P

    2009-02-11

    Co doped ZnO (Zn(1-x)Co(x)O) is studied as a prototype material for transition metal doped II-VI diluted magnetic semiconductors (DMSs) from first-principles and Monte Carlo simulations. The exchange interactions are calculated using the Korringa-Kohn-Rostoker (KKR) Green's function method. The exchange coupling constants thus obtained are treated in the classical Heisenberg model and the magnetic phase transitions are studied by the Monte Carlo technique. Our results show that the defect free substitutional DMSs of Zn(1-x)Co(x)O do not sustain magnetization at low concentration. At high concentration, we find layered magnetic structures. Ferromagnetism, with Curie temperature below room temperature, is stable at intermediate Co concentrations. First-principles studies with the generalized gradient approximation (GGA) and the GGA together with the Hubbard U are discussed with respect to structural and electronic properties of ZnO.

  13. Growth of Bulk Wide Bandgap Semiconductor Crystals and Their Potential Applications

    NASA Technical Reports Server (NTRS)

    Chen, Kuo-Tong; Shi, Detang; Morgan, S. H.; Collins, W. Eugene; Burger, Arnold

    1997-01-01

    Developments in bulk crystal growth research for electro-optical devices in the Center for Photonic Materials and Devices since its establishment have been reviewed. Purification processes and single crystal growth systems employing physical vapor transport and Bridgman methods were assembled and used to produce high purity and superior quality wide bandgap materials such as heavy metal halides and II-VI compound semiconductors. Comprehensive material characterization techniques have been employed to reveal the optical, electrical and thermodynamic properties of crystals, and the results were used to establish improved material processing procedures. Postgrowth treatments such as passivation, oxidation, chemical etching and metal contacting during the X-ray and gamma-ray device fabrication process have also been investigated and low noise threshold with improved energy resolution has been achieved.

  14. Synthesis and photocatalytic properties of multi-morphological AuCu3-ZnO hybrid nanocrystals

    NASA Astrophysics Data System (ADS)

    Zeng, Deqian; Chen, Yuanzhi; Peng, Jian; Xie, Qingshui; Peng, Dong-Liang

    2015-10-01

    Noble metal-semiconductor hybrid nanocrystals represent an important class of materials for many potential applications, especially for photocatalysis. The utilization of transition metals to form alloys with noble metals can not only reduce the preparation costs, but may also offer tunable optical and catalytic properties for a broader range of applications. In this study, we report on the solution synthesis of AuCu3-ZnO hybrid nanocrystals with three interesting morphologies, including urchin-like, flower-like and multipod-like nanocrystals. In the synthetic strategy, Au-Cu bimetallic alloy seeds formed in situ are used to induce the heteroepitaxial growth of ZnO nanocrystals on the surface of bimetallic alloy cores; thus different types of morphologies can be achieved by controlling the reaction conditions. Through high-resolution transmission electron microscopy observations, well-defined interfaces between ZnO and AuCu3 are observed, which indicate that ZnO has a (0001) orientation and prefers to grow on AuCu3 {111} facets. The as-prepared hybrid nanocrystals demonstrate morphology- and composition-dependent surface plasmon resonance (SPR) absorption bands. In addition, much higher photocatalytic efficiency than pure ZnO nanocrystals is observed for the hybrid nanocrystals in the degradation of methylene blue. In particular, the multipod-like AuCu3-ZnO hybrid nanocrystals show the highest catalytic performance, as well as more than three times higher photocurrent density than the pure ZnO sample. The reported synthetic strategy provides a facile route to the effective combination of a plasmonic alloy with semiconductor components at the nanoscale in a controlled manner.

  15. Physical preparation and optical properties of CuSbS2 nanocrystals by mechanical alloying process

    NASA Astrophysics Data System (ADS)

    Zhang, Huihui; Xu, Qishu; Tan, Guolong

    2016-09-01

    CuSbS2 nanocrystals have been synthesized through mechanical alloying Cu, Sb and S elemental powders for 40 hs. The optical spectrum of as-milled CuSbS2 nano-powders demonstrates a direct gap of 1.35 eV and an indirect gap of 0.36 eV, which are similar to that of silicon and reveals the evidence for the indirect semiconductor characterization of CuSbS2. Afterwards, CuSbS2 nanocrystals were capped with trioctylphosphine oxide/trioctylphosphine/pyridine (TOPO/TOP). There appear four sharp absorption peaks within the region of 315 to 355 nm for the dispersion solution containing the capped nanocrystals. The multiple peaks are proposed to be originating from the energy level splitting of 1S electronic state into four discrete sub-levels, where electrons were excited into the conduction band and thus four exciton absorption peaks were produced.

  16. Assemblies of Cellulose Nanocrystals

    NASA Astrophysics Data System (ADS)

    Kumacheva, Eugenia

    The entropically driven coassembly of nanorods (cellulose nanocrystals, CNCs) and different types of nanoparticles (NPs), including dye-labeled latex NPs, carbon dots and plasmonic NPs was experimentally studied in aqueous suspensions and in solid films. In mixed CNC-NP suspensions, phase separation into an isotropic NP-rich and a chiral nematic CNC-rich phase took place; the latter contained a significant amount of NPs. Drying the mixed suspension resulted in CNC-NP films with planar disordered layers of NPs, which alternated with chiral nematic CNC-rich regions. In addition, NPs were embedded in the chiral nematic domains. The stratified morphology of the films, together with a random distribution of NPs in the anisotropic phase, led to the films having close-to-uniform fluorescence, birefringence, and circular dichroism properties.

  17. Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

    PubMed

    Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

    2014-04-22

    Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

  18. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  19. Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

    DOEpatents

    Ren, Zhifeng; Chen, Gang; Poudel, Bed; Kumar, Shankar; Wang, Wenzhong; Dresselhaus, Mildred

    2007-08-14

    The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

  20. Methods for synthesis of semiconductor nanocrystals and thermoelectric compositions

    NASA Technical Reports Server (NTRS)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Poudel, Bed (Inventor); Kumar, Shankar (Inventor); Wang, Wenzhong (Inventor); Dresselhaus, Mildred (Inventor)

    2007-01-01

    The present invention provides methods for synthesis of IV VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20.degree. C. to about 360.degree. C., for a duration sufficient for generating nanoparticles as binary alloys of the IV VI elements.

  1. Cu nanocrystal growth on peptide nanotubes by biomineralization: Size control of Cu nanocrystals by tuning peptide conformation

    NASA Astrophysics Data System (ADS)

    Banerjee, Ipsita A.; Yu, Lingtao; Matsui, Hiroshi

    2003-12-01

    With recent interest in seeking new biologically inspired device-fabrication methods in nanotechnology, a new biological approach was examined to fabricate Cu nanotubes by using sequenced histidine-rich peptide nanotubes as templates. The sequenced histidine-rich peptide molecules were assembled as nanotubes, and the biological recognition of the specific sequence toward Cu lead to efficient Cu coating on the nanotubes. Cu nanocrystals were uniformly coated on the histidine-incorporated nanotubes with high packing density. In addition, the diameter of Cu nanocrystal was controlled between 10 and 30 nm on the nanotube by controlling the conformation of histidine-rich peptide by means of pH changes. Those nanotubes showed significant change in electronic structure by varying the nanocrystal diameter; therefore, this system may be developed to a conductivity-tunable building block for microelectronics and biological sensors. This simple biomineralization method can be applied to fabricate various metallic and semiconductor nanotubes with peptides whose sequences are known to mineralize specific ions.

  2. Silicon nanocrystal-noble metal hybrid nanoparticles

    NASA Astrophysics Data System (ADS)

    Sugimoto, H.; Fujii, M.; Imakita, K.

    2016-05-01

    We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion.We report a novel and facile self-limiting synthesis route of silicon nanocrystal (Si NC)-based colloidally stable semiconductor-metal (gold, silver and platinum) hybrid nanoparticles (NPs). For the formation of hybrid NPs, we employ ligand-free colloidal Si NCs with heavily boron (B) and phosphorus (P) doped shells. By simply mixing B and P codoped colloidal Si NCs with metal salts, hybrid NPs consisting of metal cores and Si NC shells are spontaneously formed. We demonstrate the synthesis of highly uniform and size controllable hybrid NPs. It is shown that codoped Si NCs act as a reducing agent for metal salts and also as a protecting layer to stop metal NP growth. The process is thus self-limiting. The development of a variety of Si NC-based hybrid NPs is a promising first step for the design of biocompatible multifunctional NPs with broad material choices for biosensing, bioimaging and solar energy conversion. Electronic supplementary information (ESI) available: Additional TEM images and extinction spectra of Si-metal hybrid NPs are shown in Fig. S1

  3. Off-Resonance Photosensitization of a Photorefractive Polymer Composite Using PbS Nanocrystals

    SciTech Connect

    Moon, Jong-Sik; Liang, Yichen; Stevens, Tyler E.; Monson, Todd C.; Huber, Dale L.; Mahala, Benjamin D.; Winiarz, Jeffrey G.

    2015-05-26

    The photosensitization of photorefractive polymeric composites for operation at 633 nm is accomplished through the inclusion of narrow band gap semiconductor nanocrystals composed of PbS. Unlike previous studies involving photosensitization of photorefractive polymer composites with inorganic nanocrystals, we employ an off-resonance approach where the first excitonic transition associated with the PbS nanocrystals lies at ~1220 nm and not the wavelength of operation. Using this methodology, internal diffraction efficiencies exceeding 82%, two-beam-coupling gain coefficients of 211 cm–1, and response times of 34 ms have been observed, representing some of the best figures of merit reported for this class of materials. Furthermore, these data demonstrate the ability of semiconductor nanocrystals to compete effectively with traditional organic photosensitizers. In addition to superior performance, this approach also offers an inexpensive and easy means by which to photosensitize composite materials. Additionally, the photoconductive characteristics of the composites used for this study will also be considered.

  4. Off-Resonance Photosensitization of a Photorefractive Polymer Composite Using PbS Nanocrystals

    DOE PAGES

    Moon, Jong-Sik; Liang, Yichen; Stevens, Tyler E.; ...

    2015-05-26

    The photosensitization of photorefractive polymeric composites for operation at 633 nm is accomplished through the inclusion of narrow band gap semiconductor nanocrystals composed of PbS. Unlike previous studies involving photosensitization of photorefractive polymer composites with inorganic nanocrystals, we employ an off-resonance approach where the first excitonic transition associated with the PbS nanocrystals lies at ~1220 nm and not the wavelength of operation. Using this methodology, internal diffraction efficiencies exceeding 82%, two-beam-coupling gain coefficients of 211 cm–1, and response times of 34 ms have been observed, representing some of the best figures of merit reported for this class of materials. Furthermore,more » these data demonstrate the ability of semiconductor nanocrystals to compete effectively with traditional organic photosensitizers. In addition to superior performance, this approach also offers an inexpensive and easy means by which to photosensitize composite materials. Additionally, the photoconductive characteristics of the composites used for this study will also be considered.« less

  5. Laser-induced growth of nanocrystals embedded in porous materials

    PubMed Central

    2013-01-01

    Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrystals in different kinds of silicate matrices. This paper summarizes the most recent works developed in our group, where the investigated nanoparticles are either made of metal (gold) or chalcogenide semiconductors (CdS, PbS), grown in precursor-impregnated porous xerogels under different laser irradiations. This review is associated to new results on silver nanocrystals in the same kind of matrices. It is shown that, depending on the employed laser, the particles can be formed near the sample surface or deep inside the silica matrix. Photothermal and/or photochemical mechanisms may be invoked to explain the nanoparticle growth, depending on the laser, precursor, and matrix. One striking result is that metal salt reduction, necessary to the production of the corresponding nanoparticles, can efficiently occur due to the thermal wrenching of electrons from the matrix itself or due to multiphoton absorption of the laser light by a reducer additive in femtosecond regime. Very localized semiconductor quantum dots could also be generated using ultrashort pulses, but while PbS nanoparticles grow faster than CdS particles due to one-photon absorption, this better efficiency is counterbalanced by a sensitivity to oxidation. In most cases where the reaction efficiency is high, particles larger than the pores have been obtained, showing that a fast diffusion of the species through the interconnected porosity can modify the matrix itself. Based on our experience in these techniques, we compare several examples of laser-induced nanocrystal growth in porous silica xerogels, which allows

  6. Laser-induced growth of nanocrystals embedded in porous materials

    NASA Astrophysics Data System (ADS)

    Capoen, Bruno; Chahadih, Abdallah; El Hamzaoui, Hicham; Cristini, Odile; Bouazaoui, Mohamed

    2013-06-01

    Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrystals in different kinds of silicate matrices. This paper summarizes the most recent works developed in our group, where the investigated nanoparticles are either made of metal (gold) or chalcogenide semiconductors (CdS, PbS), grown in precursor-impregnated porous xerogels under different laser irradiations. This review is associated to new results on silver nanocrystals in the same kind of matrices. It is shown that, depending on the employed laser, the particles can be formed near the sample surface or deep inside the silica matrix. Photothermal and/or photochemical mechanisms may be invoked to explain the nanoparticle growth, depending on the laser, precursor, and matrix. One striking result is that metal salt reduction, necessary to the production of the corresponding nanoparticles, can efficiently occur due to the thermal wrenching of electrons from the matrix itself or due to multiphoton absorption of the laser light by a reducer additive in femtosecond regime. Very localized semiconductor quantum dots could also be generated using ultrashort pulses, but while PbS nanoparticles grow faster than CdS particles due to one-photon absorption, this better efficiency is counterbalanced by a sensitivity to oxidation. In most cases where the reaction efficiency is high, particles larger than the pores have been obtained, showing that a fast diffusion of the species through the interconnected porosity can modify the matrix itself. Based on our experience in these techniques, we compare several examples of laser-induced nanocrystal growth in porous silica xerogels, which allows

  7. Laser-induced growth of nanocrystals embedded in porous materials.

    PubMed

    Capoen, Bruno; Chahadih, Abdallah; El Hamzaoui, Hicham; Cristini, Odile; Bouazaoui, Mohamed

    2013-06-06

    Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrystals in different kinds of silicate matrices. This paper summarizes the most recent works developed in our group, where the investigated nanoparticles are either made of metal (gold) or chalcogenide semiconductors (CdS, PbS), grown in precursor-impregnated porous xerogels under different laser irradiations. This review is associated to new results on silver nanocrystals in the same kind of matrices. It is shown that, depending on the employed laser, the particles can be formed near the sample surface or deep inside the silica matrix. Photothermal and/or photochemical mechanisms may be invoked to explain the nanoparticle growth, depending on the laser, precursor, and matrix. One striking result is that metal salt reduction, necessary to the production of the corresponding nanoparticles, can efficiently occur due to the thermal wrenching of electrons from the matrix itself or due to multiphoton absorption of the laser light by a reducer additive in femtosecond regime. Very localized semiconductor quantum dots could also be generated using ultrashort pulses, but while PbS nanoparticles grow faster than CdS particles due to one-photon absorption, this better efficiency is counterbalanced by a sensitivity to oxidation. In most cases where the reaction efficiency is high, particles larger than the pores have been obtained, showing that a fast diffusion of the species through the interconnected porosity can modify the matrix itself. Based on our experience in these techniques, we compare several examples of laser-induced nanocrystal growth in porous silica xerogels, which allows

  8. Optical properties and ensemble characteristics of size purified Silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Miller, Joseph Bradley

    Nanotechnology is at the forefront of current scientific research and nanocrystals are being hailed as the 'artificial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently experimenting with to create our own SiNCs and the one utilized to create the SiNCs used in this study. The underlying physics that governs the unique behavior of SiNCs is then presented. The properties of the as-produced SiNCs are determined to depend strongly on surface passivation and environment. Size purification, an important aspect of nanomaterial utilization, was successfully performed on our SiNCs though density gradient ultracentrifugation. We demonstrate that the size-purified fractions exhibit an enhanced ability for colloidal self-assembly, with better aligned nanocrystal energy levels which promotes greater photostability in close-packed films and produces a slight increase in photoluminescence (PL) quantum yield. The qualities displayed by the fractions are exploited to form SiNC clusters that exhibit photostable PL. An analysis of SiNC cluster (from individual nanocrystals to collections of more than one thousand) blinking and PL shows an improvement in their PL emitting 'on' times. Pure SiNC films and SiNC-polymer nanocomposites are created and the dependence of their PL on temperature is measured. For such nanocomposites, the coupling between the 'coffee-ring' effect and liquid-liquid phase separation is also examined for ternary mixtures of solvent, polymer and semiconducting nanocrystal. We discover that with the right SiNC-polymer concentration and polymer

  9. Synthesis of quantum dot nanocrystals and plasmonic nanoparticles using a segmented flow reactor

    NASA Astrophysics Data System (ADS)

    Mbwahnche, R. C.; Matyushkin, L. B.; Ryzhov, O. A.; Aleksandrova, O. A.; Moshnikov, V. A.

    2017-01-01

    The purpose of this research is to develop an automated method of synthesizing quantum dot nanocrystals and plasmonic nanoparticles using segmented flow rector synthesis as a new alternative to the batch method of synthesizing nanoparticles. A reactor was successfully applied to the synthesis of colloidal solutions of semiconductor (CdSe) and metal (Ag) nanoparticles. This instrument is applicable in both material science laboratories and industry.

  10. Continuous mesoporous titania nanocrystals: their growth in confined space and scope for application.

    PubMed

    Dutta, Saikat; Bhaumik, Asim

    2013-11-01

    Enjoying the single lifestyle: With an overwhelming efficiency compared to thermally sintered preformed nanocrystals, mesoporous single crystals (MSCs) of TiO2 constitute a new class of semiconductor materials for low-cost solar power, solar fuel, photocatalysis, and energy storage applications. This Highlight explores the benefits of template-directed seed-mediated growth in the confined space of a preseeded mesoporous template, and possible research avenues for further improvements.

  11. Diffusion of gold from the inner core to the surface of Ag(2)S nanocrystals.

    PubMed

    Yang, Jun; Ying, Jackie Y

    2010-02-24

    The diffusion of Au in Ag(2)S from the inner core to the surface of Ag(2)S was reported, and a new nanocomposite of core-shell Pt@Ag(2)S and Au nanoparticles has been derived through this diffusion phenomenon. Ostwald ripening was observed by transmission electron microscopy during the characterization of the nanocomposite. This elucidated the mechanism of formation of semiconductor-metal heterostructures as a consequence of Au diffusion in Ag(2)S nanocrystals.

  12. A dual-colored bio-marker made of doped ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Wu, Y. L.; Fu, S.; Tok, A. I. Y.; Zeng, X. T.; Lim, C. S.; Kwek, L. C.; Boey, F. C. Y.

    2008-08-01

    Bio-compatible ZnO nanocrystals doped with Co, Cu and Ni cations, surface capped with two types of aminosilanes and titania are synthesized by a soft chemical process. Due to the small particle size (2-5 nm), surface functional groups and the high photoluminescence emissions at the UV and blue-violet wavelength ranges, bio-imaging on human osteosarcoma (Mg-63) cells and histiocytic lymphoma U-937 monocyte cells showed blue emission at the nucleus and bright turquoise emission at the cytoplasm simultaneously. This is the first report on dual-color bio-images labeled by one semiconductor nanocrystal colloidal solution. Bright green emission was detected on mung bean seedlings labeled by all the synthesized ZnO nanocrystals. Cytotoxicity tests showed that the aminosilanes capped nanoparticles are non-toxic. Quantum yields of the nanocrystals varied from 79% to 95%. The results showed the potential of the pure ZnO and Co-doped ZnO nanocrystals for live imaging of both human cells and plant systems.

  13. Electrogenerated chemiluminescence from a CdSe nanocrystal film and its sensing application in aqueous solution.

    PubMed

    Zou, Guizheng; Ju, Huangxian

    2004-12-01

    Electrogenerated chemiluminescence (ECL) of semiconductor quantum dots in aqueous solutions and its first sensing application were studied by depositing CdSe nanocrystals (NCs) on a paraffin-impregnated graphite electrode (PIGE). The CdSe nanocrystal thin film exhibited two ECL peaks at -1.20 (ECL-1) and -1.50 V (ECL-2) in pH 9.3, 0.1 M PBS during the cyclic sweep between 0 and -1.8 V at 20 mV s(-1). The electron-transfer reaction between individual electrochemically reduced nanocrystal species and oxidant coreactants such as H(2)O(2) and reduced dissolved oxygen led to ECL-1. When mass NCs packed densely in the film were reduced electrochemically, assembly of reduced nanocrystal species could react with coreactants to produce another ECL signal, ECL-2. ECL-1 showed higher sensitivity to the concentration of oxidant coreactants than ECL-2 and thus was used for ECL detection of coreactant, H(2)O(2). A linear response of ECL-1 to H(2)O(2) was observed in the concentration range of 2.5 x 10(-7)-6 x 10(-5) M with a detection limit of 1.0 x10(-7) M. The fabrication of 10 CdSe nanocrystal thin-film modified PIGEs displayed an acceptable reproducibility with a RSD of 1.18% obtained at H(2)O(2) level of 10 microM.

  14. Influence of Dopant Distribution on the Plasmonic Properties of Indium Tin Oxide Nanocrystals

    SciTech Connect

    Lounis, SD; Runnerstrom, EL; Bergerud, A; Nordlund, D; Milliron, DJ

    2014-05-14

    Doped metal oxide nanocrystals represent an exciting frontier for colloidal synthesis of plasmonic materials, displaying unique optoelectronic properties and showing promise for a variety of applications. However, fundamental questions about the nature of doping in these materials remain. In this article, the strong influence of radial dopant distribution on the optoelectronic properties of colloidal indium tin oxide nanocrystals is reported. Comparing elemental depth-profiling by X-ray photoelectron spectroscopy (XPS) with detailed modeling and simulation of the optical extinction of these nanocrystals using the Drude model for free electrons, a correlation between surface segregation of tin ions and the average activation of dopants is observed. A strong influence of surface segregation of tin on the line shape of the localized surface plasmon resonance (LSPR) is also reported. Samples with tin segregated near the surface show a symmetric line shape that suggests weak or no damping of the plasmon by ionized impurities. It is suggested that segregation of tin near the surface facilitates compensation of the dopant ions by electronic defects and oxygen interstitials, thus reducing activation. A core shell model is proposed to explain the observed differences in line shape. These results demonstrate the nuanced role of dopant distribution in determining the optoelectronic properties of semiconductor nanocrystals and suggest that more detailed study of the distribution and structure of defects in plasmonic colloidal nanocrystals is warranted.

  15. Lead Halide Perovskites and Other Metal Halide Complexes As Inorganic Capping Ligands for Colloidal Nanocrystals

    PubMed Central

    2014-01-01

    Lead halide perovskites (CH3NH3PbX3, where X = I, Br) and other metal halide complexes (MXn, where M = Pb, Cd, In, Zn, Fe, Bi, Sb) have been studied as inorganic capping ligands for colloidal nanocrystals. We present the methodology for the surface functionalization via ligand-exchange reactions and the effect on the optical properties of IV–VI, II–VI, and III–V semiconductor nanocrystals. In particular, we show that the Lewis acid–base properties of the solvents, in addition to the solvent dielectric constant, must be properly adjusted for successful ligand exchange and colloidal stability. High luminescence quantum efficiencies of 20–30% for near-infrared emitting CH3NH3PbI3-functionalized PbS nanocrystals and 50–65% for red-emitting CH3NH3CdBr3- and (NH4)2ZnCl4-capped CdSe/CdS nanocrystals point to highly efficient electronic passivation of the nanocrystal surface. PMID:24746226

  16. Colloidal CIGS and CZTS nanocrystals: A precursor route to printed photovoltaics

    SciTech Connect

    Akhavan, Vahid A.; Goodfellow, Brian W.; Panthani, Matthew G.; Steinhagen, Chet; Harvey, Taylor B.; Stolle, C. Jackson; Korgel, Brian A.

    2012-05-15

    This review article summarizes our research focused on Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGS) nanocrystals, including their synthesis and implementation as the active light absorbing material in photovoltaic devices (PVs). CIGS PV layers are typically made using a high temperature (>450 Degree-Sign C) process in which Cu, In and Ga are sequentially or co-evaporated and selenized. We have sought to use CIGS nanocrystals synthesized with the desired stoichiometry to deposit PV device layers without high temperature processing. This approach, using spray deposition of the CIGS light absorber layers, without high temperature selenization, has enabled up to 3.1% power conversion efficiency under AM 1.5 solar illumination. Although the device efficiency is too low for commercialization, these devices provide a proof-of-concept that solution-deposited CIGS nanocrystal films can function in PV devices, enabling unconventional device architectures and materials combinations, including the use of flexible, inexpensive and light-weight plastic substrates. - Graphical abstract: The semiconductor light-absorbing layers in photovoltaic devices can be deposited under ambient conditions using nanocrystal inks. Devices can be fabricated on glass or on mechanically flexible plastic substrates. Highlights: Black-Right-Pointing-Pointer CIGS and CZTS nanocrystals are synthesized and formulated into inks. Black-Right-Pointing-Pointer Nanocrystal films are spray deposited and used as light absorbing layers in photovoltaic devices. Black-Right-Pointing-Pointer Photovoltaic devices were constructed from nanowire mats. Black-Right-Pointing-Pointer Photovoltaic device efficiency is limited by electrical transport in the nanocrystal layers.

  17. Correlation between the band gap, elastic modulus, Raman shift and melting point of CdS, ZnS, and CdSe semiconductors and their size dependency

    NASA Astrophysics Data System (ADS)

    Yang, C.; Zhou, Z. F.; Li, J. W.; Yang, X. X.; Qin, W.; Jiang, R.; Guo, N. G.; Wang, Y.; Sun, C. Q.

    2012-02-01

    With structural miniaturization down to the nanoscale, the detectable quantities of solid materials no longer remain constant but become tunable. For the II-VI semiconductors example, the band gap expands, the elastic modulus increases, the melting point drops, and the Raman optical phonons experience red shift associated with creation of low frequency Raman acoustic modes that undergo blue shift with decreasing the dimensional scale. In order to understand the common origin of the size dependency of these seemingly irrelevant properties, we formulated these quantities for CdS, ZnS, and CdSe semiconductors from the perspectives of bond order-length-strength correlation and the local bond averaging approach. Consistency between the theory predictions and the measured size dependence of these quantities clarified that the undercoordination-induced local strain and quantum entrapment and the varied fraction of undercoordinated atoms of the entire solid correlate these quantities and dominate their size effect.

  18. Nanocrystal powered nanomotor

    DOEpatents

    Regan, Brian C.; Zettl, Alexander K.; Aloni, Shaul

    2011-01-04

    A nanoscale nanocrystal which may be used as a reciprocating motor is provided, comprising a substrate having an energy differential across it, e.g. an electrical connection to a voltage source at a proximal end; an atom reservoir on the substrate distal to the electrical connection; a nanoparticle ram on the substrate distal to the atom reservoir; a nanolever contacting the nanoparticle ram and having an electrical connection to a voltage source, whereby a voltage applied between the electrical connections on the substrate and the nanolever causes movement of atoms between the reservoir and the ram. Movement of the ram causes movement of the nanolever relative to the substrate. The substrate and nanolever preferably comprise multiwalled carbon nanotubes (MWNTs) and the atom reservoir and nanoparticle ram are preferably metal (e.g. indium) deposited as small particles on the MWNTs. The substrate may comprise a silicon chip that has been fabricated to provide the necessary electrodes and other electromechanical structures, and further supports an atomic track, which may comprise an MWNT.

  19. Preparation of nanocrystals and nanocomposites of nanocrystal-conjugated polymer, and their photophysical properties in confined geometries

    SciTech Connect

    Xu, Jun

    2007-01-01

    Semiconductors nanocrystals (NCs), also called quantum dots (QDs), have attracted tremendous interest over the past decade in the fields of physics, chemistry, and engineering. Due to the quantum-confined nature of QDs, the variation of particle size provides continuous and predictable changes in fluorescence emission. On the other hand, conjugated polymers (CPs) have been extensively studied for two decades due to their semiconductor-like optical and electronic properties. The electron and energy transfer between NCs and CPs occur in solar cells and light emitting diodes (LEDs), respectively. Placing CPs in direct contact with a NC (i.e., preparing NC-CP nanocomposites) carries advantage over cases where NC aggregation dominates. Such NC-CP nanocomposites possess a well-defined interface that significantly promotes the charge or energy transfer between these two components. However, very few studies have centered on such direct integration. We prepared NCs and NC-CP nanocomposites based on heck coupling and investigated the energy and charge transfer between semiconductor NCs (i.e., CdSe QDs), CPs (i.e., poly(3-hexyl thiophene) (P3HT)) in the nanocomposites in confined geometries. Two novel strategies were used to confine NC and/or NC-CP nanocomposites: (a) directly immobilizing nanohybrids, QDs and nanorods in nanoscopic porous alumina membrane (PAM) , and (b) confining the QDs and CPs in sphere-on-flat geometry to induce self-assembly. While investigating the confinement effect, gradient concentric ring patterns of high regularity form spontaneously simply by allowing a droplet of solution containing either conjugated polymer or semiconductor nanocrystal in a consecutive stick-slip mothion in a confined geometry. Such constrained evaporation can be utilized as a simple, cheap, and robust strategy for self-assembling various materials with easily tailored optical and electronic properties into spatially ordered, two-dimensional patterns. These self

  20. Preparation of nanocrystals and nanocomposites of nanocrystal-conjugated polymer, and their photophysical properties in confined geometries

    NASA Astrophysics Data System (ADS)

    Xu, Jun

    Semiconductors nanocrystals (NCs), also called quantum dots (QDs), have attracted tremendous interest over the past decade in the fields of physics, chemistry, and engineering. Due to the quantum-confined nature of QDs, the variation of particle size provides continuous and predictable changes in fluorescence emission. On the other hand, conjugated polymers (CPs) have been extensively studied for two decades due to their semiconductor-like optical and electronic properties. The electron and energy transfer between NCs and CPs occur in solar cells and light emitting diodes (LEDs), respectively. Placing CPs in direct contact with a NC (i.e., preparing NC-CP nanocomposites) carries advantage over cases where NC aggregation dominates. Such NC-CP nanocomposites possess a well-defined interface that significantly promotes the charge or energy transfer between these two components. However, very few studies have centered on such direct integration. We prepared NCs and NC-CP nanocomposites based on heck coupling and investigated the energy and charge transfer between semiconductor NCs (i.e., CdSe QDs), CPs (i.e., poly(3-hexyl thiophene) (P3HT)) in the nanocomposites in confined geometries. Two novel strategies were used to confine NC and/or NC-CP nanocomposites: (a) directly immobilizing nanohybrids, QDs and nanorods in nanoscopic porous alumina membrane (PAM), and (b) confining the QDs and CPs in sphere-on-flat geometry to induce self-assembly. While investigating the confinement effect, gradient concentric ring patterns of high regularity form spontaneously simply by allowing a droplet of solution containing either conjugated polymer or semiconductor nanocrystal in a consecutive stick-slip motion in a confined geometry. Such constrained evaporation can be utilized as a simple, cheap, and robust strategy for self-assembling various materials with easily tailored optical and electronic properties into spatially ordered, two-dimensional patterns. These self

  1. Nanocrystal assembly for tandem catalysis

    DOEpatents

    Yang, Peidong; Somorjai, Gabor; Yamada, Yusuke; Tsung, Chia-Kuang; Huang, Wenyu

    2014-10-14

    The present invention provides a nanocrystal tandem catalyst comprising at least two metal-metal oxide interfaces for the catalysis of sequential reactions. One embodiment utilizes a nanocrystal bilayer structure formed by assembling sub-10 nm platinum and cerium oxide nanocube monolayers on a silica substrate. The two distinct metal-metal oxide interfaces, CeO.sub.2--Pt and Pt--SiO.sub.2, can be used to catalyze two distinct sequential reactions. The CeO.sub.2--Pt interface catalyzed methanol decomposition to produce CO and H.sub.2, which were then subsequently used for ethylene hydroformylation catalyzed by the nearby Pt--SiO.sub.2 interface. Consequently, propanal was selectively produced on this nanocrystal bilayer tandem catalyst.

  2. Nanocrystals for luminescent solar concentrators.

    PubMed

    Bradshaw, Liam R; Knowles, Kathryn E; McDowall, Stephen; Gamelin, Daniel R

    2015-02-11

    Luminescent solar concentrators (LSCs) harvest sunlight over large areas and concentrate this energy onto photovoltaics or for other uses by transporting photons through macroscopic waveguides. Although attractive for lowering solar energy costs, LSCs remain severely limited by luminophore reabsorption losses. Here, we report a quantitative comparison of four types of nanocrystal (NC) phosphors recently proposed to minimize reabsorption in large-scale LSCs: two nanocrystal heterostructures and two doped nanocrystals. Experimental and numerical analyses both show that even the small core absorption of the leading NC heterostructures causes major reabsorption losses at relatively short transport lengths. Doped NCs outperform the heterostructures substantially in this critical property. A new LSC phosphor is introduced, nanocrystalline Cd(1-x)Cu(x)Se, that outperforms all other leading NCs by a significant margin in both small- and large-scale LSCs under full-spectrum conditions.

  3. Semiconductor Quantum Dots with Photoresponsive Ligands.

    PubMed

    Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

    2016-10-01

    Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

  4. Injected nanocrystals for targeted drug delivery

    PubMed Central

    Lu, Yi; Li, Ye; Wu, Wei

    2016-01-01

    Nanocrystals are pure drug crystals with sizes in the nanometer range. Due to the advantages of high drug loading, platform stability, and ease of scaling-up, nanocrystals have been widely used to deliver poorly water-soluble drugs. Nanocrystals in the blood stream can be recognized and sequestered as exogenous materials by mononuclear phagocytic system (MPS) cells, leading to passive accumulation in MPS-rich organs, such as liver, spleen and lung. Particle size, morphology and surface modification affect the biodistribution of nanocrystals. Ligand conjugation and stimuli-responsive polymers can also be used to target nanocrystals to specific pathogenic sites. In this review, the progress on injected nanocrystals for targeted drug delivery is discussed following a brief introduction to nanocrystal preparation methods, i.e., top-down and bottom-up technologies. PMID:27006893

  5. Competition effects among size, dimensionality and pressure on modulating bandgap of CdSe and ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Jiang, Xiao Bao; Sheng, Hong Chao; Gu, Xiao Yan; Shi, Ming Xiao

    2015-12-01

    Size, dimensionality and pressure play important roles on modulating band gap (Eg) of semiconductor nanocrystals, and have attracted extensive attention in recent years. In this letter, a simple thermodynamic model is developed and the competition relation among size, dimensionality and pressure effects on Eg is discussed. The accuracy of our prediction is confirmed by the experimental data and simulation results of CdSe and ZnO nanocrystals. This model provides a new insight into the size, dimensionality and pressure effects on Eg and guides the optimal selection as design quantum devices.

  6. Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion.

    PubMed

    Erickson, S D; Smith, T J; Moses, L M; Watt, R K; Colton, J S

    2015-01-09

    Quantum dot solar cells seek to surpass the solar energy conversion efficiencies achieved by bulk semiconductors. This new field requires a broad selection of materials to achieve its full potential. The 12 nm spherical protein ferritin can be used as a template for uniform and controlled nanocrystal growth, and to then house the nanocrystals for use in solar energy conversion. In this study, precise band gaps of titanium, cobalt, and manganese oxyhydroxide nanocrystals within ferritin were measured, and a change in band gap due to quantum confinement effects was observed. The range of band gaps obtainable from these three types of nanocrystals is 2.19-2.29 eV, 1.93-2.15 eV, and 1.60-1.65 eV respectively. From these measured band gaps, theoretical efficiency limits for a multi-junction solar cell using these ferritin-enclosed nanocrystals are calculated and found to be 38.0% for unconcentrated sunlight and 44.9% for maximally concentrated sunlight. If a ferritin-based nanocrystal with a band gap similar to silicon can be found (i.e. 1.12 eV), the theoretical efficiency limits are raised to 51.3% and 63.1%, respectively. For a current matched cell, these latter efficiencies become 41.6% (with an operating voltage of 5.49 V), and 50.0% (with an operating voltage of 6.59 V), for unconcentrated and maximally concentrated sunlight respectively.

  7. Solvent-like ligand-coated ultrasmall cadmium selenide nanocrystals: strong electronic coupling in a self-organized assembly.

    PubMed

    Lawrence, Katie N; Johnson, Merrell A; Dolai, Sukanta; Kumbhar, Amar; Sardar, Rajesh

    2015-07-21

    Strong inter-nanocrystal electronic coupling is a prerequisite for delocalization of exciton wave functions and high conductivity. We report 170 meV electronic coupling energy of short chain poly(ethylene glycol) thiolate-coated ultrasmall (<2.5 nm in diameter) CdSe semiconductor nanocrystals (SNCs) in solution. Cryo-transmission electron microscopy analysis showed the formation of a pearl-necklace assembly of nanocrystals in solution with regular inter-nanocrystal spacing. The electronic coupling was studied as a function of CdSe nanocrystal size where the smallest nanocrystals exhibited the largest coupling energy. The electronic coupling in spin-cast thin-film (<200 nm in thickness) of poly(ethylene glycol) thiolate-coated CdSe SNCs was studied as a function of annealing temperature, where an unprecedentedly large, ∼400 meV coupling energy was observed for 1.6 nm diameter SNCs, which were coated with a thin layer of poly(ethylene glycol) thiolates. Small-angle X-ray scattering measurements showed that CdSe SNCs maintained an order array inside the films. The strong electronic coupling of SNCs in a self-organized film could facilitate the large-scale production of highly efficient electronic materials for advanced optoelectronic device application.

  8. Post-processing of lattice dynamical data for large crystalline systems (disordered semiconductors)

    NASA Astrophysics Data System (ADS)

    Postnikov, Andrei

    2013-02-01

    In first-principes simulations of mixed semiconductors, the calculations ought to be done on large supercells, deprived of any symmetry due to random placement of atoms and their subsequent relaxation, even if underlying crystal structure is well defined. Calculation of force constants and subsequent diagonalization of the dynamical matrix produces large bulks of data in the form of very dense eigenvectors and long phonon eigenvectors. Different algorithms of projection help to extract meaningful information from these data, according to actual needs. Projections along with a given q-vector permit either (i) to enhance the genuinely zone-center phonon features, likely to be revealed in Raman or infrared spectra, or (ii) to reveal the traces of phonon dispersion as function of the q variation, in the situation where formally the translation symmetry is broken. Projections along with symmetry coordinates corresponding to different irreducible representations of the space group of the underlying perfect crystal help to approximatively attribute specific vibration patterns according to their symmetry properties, and hence to figure out experimental setup in which they can be observed. Similar techniques can be applied to the study of perfect crystals with complex structure, typically superlattices constructed from much simpler prototypes. The examples will be given from II-VI and III-V mixed (pseudobinary) semiconductors, from ternary and quaternary semiconductors used for photovoltaic applications, and others.

  9. "Nanocrystal bilayer for tandem catalysis"

    SciTech Connect

    Yamada, Yusuke; Tsung, Chia Kuang; Huang, Wenyu; Huo, Ziyang; E.Habas, Susan E; Soejima, Tetsuro; Aliaga, Cesar E; Samorjai, Gabor A; Yang, Peidong

    2011-01-24

    Supported catalysts are widely used in industry and can be optimized by tuning the composition and interface of the metal nanoparticles and oxide supports. Rational design of metal-metal oxide interfaces in nanostructured catalysts is critical to achieve better reaction activities and selectivities. We introduce here a new class of nanocrystal tandem catalysts that have multiple metal-metal oxide interfaces for the catalysis of sequential reactions. We utilized a nanocrystal bilayer structure formed by assembling platinum and cerium oxide nanocube monolayers of less than 10 nm on a silica substrate. The two distinct metal-metal oxide interfaces, CeO2-Pt and Pt-SiO2, can be used to catalyse two distinct sequential reactions. The CeO2-Pt interface catalysed methanol decomposition to produce CO and H2, which were subsequently used for ethylene hydroformylation catalysed by the nearby Pt-SiO2 interface. Consequently, propanal was produced selectively from methanol and ethylene on the nanocrystal bilayer tandem catalyst. This new concept of nanocrystal tandem catalysis represents a powerful approach towards designing high-performance, multifunctional nanostructured catalysts

  10. A new family of wurtzite-phase Cu2ZnAS4-x and CuZn2AS4 (A = Al, Ga, In) nanocrystals for solar energy conversion applications.

    PubMed

    Ghosh, Anima; Palchoudhury, Soubantika; Thangavel, Rajalingam; Zhou, Ziyou; Naghibolashrafi, Nariman; Ramasamy, Karthik; Gupta, Arunava

    2016-01-07

    A new family of quaternary semiconductors Cu2ZnAS4-x and CuZn2AS4 (A = Al, Ga, In) has been synthesized in the form of wurtzite phase nanocrystals for the first time. The nanocrystals can be converted to the stannite phase via thermal annealing under a N2 atmosphere. A direct band gap in the visible wavelength region combined with a high absorption cross-section makes these materials promising for solar energy conversion applications.

  11. Highly crosslinked poly(dimethylsiloxane) microbeads with uniformly dispersed quantum dot nanocrystals.

    PubMed

    Shojaei-Zadeh, Shahab; Morris, Jeffrey F; Couzis, Alex; Maldarelli, Charles

    2011-11-01

    This study demonstrates how luminescent semiconductor nanocrystals (quantum dots or QDs) can be dispersed uniformly in a poly(dimethylsiloxane) (PDMS) matrix by polymerizing a mixture of the prepolymer oligomers and the nanocrystals with a relatively large concentration of crosslinking molecules. A microfluidic device is used to fabricate PDMS microbeads embedded with the QDs by using flow focusing to first form monodisperse droplets of the prepolymer/crosslinker/nanocrystal mixture in a continuous aqueous phase. The droplets are subsequently collected, and heated to polymerize them into solid microbead composites. The degree of aggregation of the nanocrystals in the matrix is studied by measuring the nonradiative resonance energy transfer (RET) between the nanocrystals. For this purpose, two quantum dots are used with maxima in their luminescence emission spectrum at 560 nm and 620 nm. When the nanocrystals are within the Förster radius (approximately 10 nm) of each other, exciton energy cascades from the QDs which emit at the shorter wavelength to the QDs which emit at the longer wavelength. This energy transfer is quantified, for two concentration ratios of the prepolmer to the crosslinker, by measuring the deviation of the microbead luminescence spectrum from a reference spectrum obtained by dispersing the QD mixture in a solvent (toluene) in which the nanocrystals do not aggregate. For a low concentration of crosslinking molecules relative to the prepolymer (5:1 by weight prepolymer to crosslinker), strong RET is observed as the emission of the 620 nm QDs is increased and the 560 nm QDs is decreased relative to the reference. In the emission spectrum for a higher concentration of crosslinkers (2:1 by weight prepolymer to crosslinker), the resonance energy transfer is less relative to the case of the low concentration of crosslinkers, and the spectrum more closely resembles the reference. This result indicates that the increase in the crosslinker concentration

  12. Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

    PubMed

    Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

    2014-04-01

    Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

  13. Unraveling the nature of carrier-mediated ferromagnetism in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bouzerar, Georges; Bouzerar, Richard

    2015-10-01

    After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds, is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations, Mn-doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole-doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach room-temperature ferromagnetism in the dilute regime? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double-exchange type in (Ga,Mn)N? In spite of the great success of density functional theory-based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model, it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS's.

  14. Penternary chalcogenides nanocrystals as catalytic materials for efficient counter electrodes in dye-synthesized solar cells

    PubMed Central

    Özel, Faruk; Sarılmaz, Adem; İstanbullu, Bilal; Aljabour, Abdalaziz; Kuş, Mahmut; Sönmezoğlu, Savaş

    2016-01-01

    The penternary chalcogenides Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 were successfully synthesized by hot-injection method, and employed as a catalytic materials for efficient counter electrodes in dye-synthesized solar cells (DSSCs). The structural, compositional, morphological and optical properties of these pentenary semiconductors were characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), energy-dispersive spectrometer (EDS) and ultraviolet-visible (UV–Vis) spectroscopy. The Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 nanocrystals had a single crystalline, kesterite phase, adequate stoichiometric ratio, 18–25 nm particle sizes which are forming nanospheres, and band gap energy of 1.18 and 1.45 eV, respectively. Furthermore, the electrochemical impedance spectroscopy and cyclic voltammograms indicated that Cu2CoSn(SeS)4 nanocrystals as counter electrodes exhibited better electrocatalytic activity for the reduction of iodine/iodide electrolyte than that of Cu2ZnSn(SeS)4 nanocrystals and conventional platinum (Pt). The photovoltaic results demonstrated that DSSC with a Cu2CoSn(SeS)4 nanocrystals-based counter electrode achieved the best efficiency of 6.47%, which is higher than the same photoanode employing a Cu2ZnSn(SeS)4 nanocrystals (3.18%) and Pt (5.41%) counter electrodes. These promising results highlight the potential application of penternary chalcogen Cu2CoSn(SeS)4 nanocrystals in low-cost, high-efficiency, Pt-free DSSCs. PMID:27380957

  15. Penternary chalcogenides nanocrystals as catalytic materials for efficient counter electrodes in dye-synthesized solar cells

    NASA Astrophysics Data System (ADS)

    Özel, Faruk; Sarılmaz, Adem; Istanbullu, Bilal; Aljabour, Abdalaziz; Kuş, Mahmut; Sönmezoğlu, Savaş

    2016-07-01

    The penternary chalcogenides Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 were successfully synthesized by hot-injection method, and employed as a catalytic materials for efficient counter electrodes in dye-synthesized solar cells (DSSCs). The structural, compositional, morphological and optical properties of these pentenary semiconductors were characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), energy-dispersive spectrometer (EDS) and ultraviolet-visible (UV–Vis) spectroscopy. The Cu2CoSn(SeS)4 and Cu2ZnSn(SeS)4 nanocrystals had a single crystalline, kesterite phase, adequate stoichiometric ratio, 18–25 nm particle sizes which are forming nanospheres, and band gap energy of 1.18 and 1.45 eV, respectively. Furthermore, the electrochemical impedance spectroscopy and cyclic voltammograms indicated that Cu2CoSn(SeS)4 nanocrystals as counter electrodes exhibited better electrocatalytic activity for the reduction of iodine/iodide electrolyte than that of Cu2ZnSn(SeS)4 nanocrystals and conventional platinum (Pt). The photovoltaic results demonstrated that DSSC with a Cu2CoSn(SeS)4 nanocrystals-based counter electrode achieved the best efficiency of 6.47%, which is higher than the same photoanode employing a Cu2ZnSn(SeS)4 nanocrystals (3.18%) and Pt (5.41%) counter electrodes. These promising results highlight the potential application of penternary chalcogen Cu2CoSn(SeS)4 nanocrystals in low-cost, high-efficiency, Pt-free DSSCs.

  16. Cellulose nanocrystals: synthesis, functional properties, and applications

    PubMed Central

    George, Johnsy; Sabapathi, SN

    2015-01-01

    Cellulose nanocrystals are unique nanomaterials derived from the most abundant and almost inexhaustible natural polymer, cellulose. These nanomaterials have received significant interest due to their mechanical, optical, chemical, and rheological properties. Cellulose nanocrystals primarily obtained from naturally occurring cellulose fibers are biodegradable and renewable in nature and hence they serve as a sustainable and environmentally friendly material for most applications. These nanocrystals are basically hydrophilic in nature; however, they can be surface functionalized to meet various challenging requirements, such as the development of high-performance nanocomposites, using hydrophobic polymer matrices. Considering the ever-increasing interdisciplinary research being carried out on cellulose nanocrystals, this review aims to collate the knowledge available about the sources, chemical structure, and physical and chemical isolation procedures, as well as describes the mechanical, optical, and rheological properties, of cellulose nanocrystals. Innovative applications in diverse fields such as biomedical engineering, material sciences, electronics, catalysis, etc, wherein these cellulose nanocrystals can be used, are highlighted. PMID:26604715

  17. Intermetallic Nanocrystals: Syntheses and Catalytic Applications.

    PubMed

    Yan, Yucong; Du, Jingshan S; Gilroy, Kyle D; Yang, Deren; Xia, Younan; Zhang, Hui

    2017-02-24

    At the forefront of nanochemistry, there exists a research endeavor centered around intermetallic nanocrystals, which are unique in terms of long-range atomic ordering, well-defined stoichiometry, and controlled crystal structure. In contrast to alloy nanocrystals with no elemental ordering, it is challenging to synthesize intermetallic nanocrystals with a tight control over their size and shape. Here, recent progress in the synthesis of intermetallic nanocrystals with controllable sizes and well-defined shapes is highlighted. A simple analysis and some insights key to the selection of experimental conditions for generating intermetallic nanocrystals are presented, followed by examples to highlight the viable use of intermetallic nanocrystals as electrocatalysts or catalysts for various reactions, with a focus on the enhanced performance relative to their alloy counterparts that lack elemental ordering. Within the conclusion, perspectives on future developments in the context of synthetic control, structure-property relationships, and applications are discussed.

  18. Surface Structure of Aerobically Oxidized Diamond Nanocrystals

    DTIC Science & Technology

    2014-10-27

    distribution is unlimited. Surface Structure of Aerobically Oxidized Diamond Nanocrystals The views, opinions and/or findings contained in this report...2211 diamond nanocrystals, REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S) ARO 8. PERFORMING...Room 254, Mail Code 8725 New York, NY 10027 -7922 ABSTRACT Surface Structure of Aerobically Oxidized Diamond Nanocrystals Report Title We investigate

  19. (Plasmonic Metal Core)/(Semiconductor Shell) Nanostructures

    NASA Astrophysics Data System (ADS)

    Fang, Caihong

    Over the past several years, integration of metal nanocrystals that can support localized surface plasmon has been demonstrated as one of the most promising methods to the improvement of the light-harvesting efficiency of semiconductors. Ag and Au nanocrystals have been extensively hybridized with semiconductors by either deposition or anchoring. However, metal nanocrystals tend to aggregate, reshape, detach, or grow into large nanocrystals, leading to a loss of the unique properties seen in the original nanocrystals. Fortunately, core/shell nanostructures, circumventing the aforementioned problems, have been demonstrated to exhibit superior photoactivities. To further improve the light-harvesting applications of (plasmonic metal core)/(semiconductor shell) nanostructures, it is vital to understand the plasmonic and structural evolutions during the preparation processes, design novel hybrid nanostructures, and improve their light-harvesting performances. In this thesis, I therefore studied the plasmonic and structural evolutions during the formation of (Ag core)/(Ag2S shell) nanostructures. Moreover, I also prepared (noble metal core)/(TiO2 shell) nanostructures and investigated their plasmonic properties and photon-harvesting applications. Clear understanding of the sulfidation process can enable fine control of the plasmonic properties as well as the structural composition of Ag/Ag 2S nanomaterials. Therefore, I investigated the plasmonic and structural variations during the sulfidation process of Ag nanocubes both experimentally and numerically. The sulfidation reactions were carried out at both the ensemble and single-particle levels. Electrodynamic simulations were also employed to study the variations of the plasmonic properties and plasmon modes. Both experiment and simulation results revealed that sulfidation initiates at the vertices of Ag nanocubes. Ag nanocubes are then gradually truncated and each nanocube becomes a nanosphere eventually. The cubic

  20. Silicon Nanocrystal Nonvolatile Memories

    NASA Astrophysics Data System (ADS)

    Muralidhar, R.; Sadd, M. A.; White, B. E.

    In 1959, physicist Richard Feynman delivered his "There's Plenty of Room Left at the Bottom" lecture [1] to the American Physical Society that spawned the field of nanotechnology. In that lecture, Feynman discussed two themes that are critical to the work presented here. The first was the recognition of the tremendous opportunities associated with the ability to miniaturize computers. At the time of his lecture, the most powerful computers consumed entire rooms, and Feynman realized the tremendous gains that could be realized in performance if the technology could be reduced to the size of one's thumbnail. The second important area Feynman touched on was the unique opportunities that surround the manipulation of matter at the atomic level to create materials with unique and, hopefully, useful properties. Both of these ideas have now been realized as evidenced by the exponential growth of the semiconductor industry over the last 40 years and the tremendous explosion in nanotechnology research, development, and product introduction over the last decade