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Sample records for iii-nitride ternary semiconductors

  1. Carrier dynamics in III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Liu, Kai

    In the past decade, III-nitride semiconductors had a considerable impact in solid state lighting and high speed high power electronics. As technology develops, high Al content III-nitride semiconductors lead the edge of research. It opens the door to many applications especially portable ones: from homeland security, bio-analytical, medical diagnostic, air and water disinfection, sterilization, chemical sensing systems, non-line-of-sight (NLOS) communications, to high-density optical data storage. In this thesis, we first study GaN epilayers, as well as more complicate high Al content AlGaN/AlGaN MQW structures used as active media for deep UV LEDs. We theoretically study the photoluminescence (PL) dynamics in high quality GaN epilayers by establishing a new decay model. In our model, surface recombination, diffusion, and re-absorption are taken into account. Our model is in excellent agreement with experimental data obtained by time-resolved PL. Our results show that the carrier diffusion and surface recombination play key roles in the PL decay. For high Al content AlGaN/AlGaN MQW structures, we first present the investigation of built-in electric fields in AlxGa1-xN/Al yGa1-yN MQWs embedded into p-i-n structure by using photoluminescence experiments. By comparison of the Stark shifts induced by the p-i-n structure and by photo-excited free carrier screening, we evaluate the intrinsic electric field induced by piezoelectric and spontaneous polarizations. Furthermore we investigate carrier dynamics in sets of identically grown Al0.35Ga0.65N/Al 0.49Ga0.51N MQW structures with well widths varying from 1.65 to 5.0 nm by TR-PL and LITG techniques. We observed screening of the built-in electric field by free non-equilibrium carriers and localization governed PL kinetics at different decay stages. A decrease of carrier lifetime with increasing well width is observed and attributed to the carrier localization occurring due to well width fluctuations of the quantum well

  2. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  3. Methods for improved growth of group III nitride semiconductor compounds

    DOEpatents

    Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

    2015-03-17

    Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

  4. Progress and prospects of group-III nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Mohammad, S. N.; Morkoç, H.

    We review recent progress in the group-III nitride and related materials, and electronic and optical devices based on them. Blue and UV (e.g. ultra violet) emitters and detectors, and high temperature/high power electronics which has long been coveted are beginning to be realized either in the laboratory or in the commercial arena, due in part to the breathtaking progress made in the last few years in the art and science of GaN, InN, AlN and their salloys. With brief references to the historical aspect of the relevant developments, this review concerns itself primarily with the current status of wide bandgap gallium nitride and related semiconductors from both the materials and devices points of view. Following a discussion of the structural properties of these materials, their electrical and optical properties are described in detail. The available data on metal contacts, the properties of which are indeed very conducive for the devices mentioned, from the points of view of ohmic contacts and Schottky barriers, are elaborated on. Recent progress on processing issues such as etching are reviewed. The review then embarks on an indash;depth discussion and analysis of field effect transistors, bipolar transistors, light emitting diodes, laser and photo detectors.

  5. Electronic Biosensors Based on III-Nitride Semiconductors.

    PubMed

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-01-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  6. Electronic Biosensors Based on III-Nitride Semiconductors

    NASA Astrophysics Data System (ADS)

    Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-07-01

    We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

  7. Strain effect in group-III nitride semiconductors and their alloys

    NASA Astrophysics Data System (ADS)

    Yan, Qimin; Rinke, Patrick; Scheffler, Matthias; van de Walle, Chris

    2009-11-01

    Strain plays a crucial role in group-III nitride semiconductor based devices since it affects the band structure near the valence- and conduction-band edges and thus the optical properties and the device characteristics. However, the deformation potentials that describe the change in band structure under strain have not yet been reliably determined. We present a systematic study of the strain effects in AlN, GaN and InN in the wurtzite phase. We apply density functional theory and hybrid functionals to address the band-gap problem. We observe nonlinearities of transition energies under realistic strain condition that may, in part, explain the appreciable scatter in previous theoretical work on deformation potentials of group-III-nitrides. For the linear regime around the experimental lattice parameters, we present a complete set of deformation potentials. Applying our deformation potentials, we study strain effects in InGaN alloys (including c-, m-, and semi-polar planes) grown on GaN substrates. We make predictions for the transition energies in these systems and their dependence on In composition.

  8. Inductively coupled plasma reactive ion etching of III-nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Shah, A. P.; Laskar, M. R.; Rahman, A. A.; Gokhale, M. R.; Bhattacharya, A.

    2013-02-01

    III-Nitride semiconductor materials are resistant to most wet chemical etch processes, and hence the only viable alternative is to use dry etching for device processing. However, the conventional Reactive Ion Etching (RIE) process results in very slow etch-rates because of low reactive ion density, and larger surface damage due to high energy ion bombardment. Using Inductively Coupled Plasma (ICP) RIE, a very fast etch-rate and smooth morphology is achieved due to independent control of ion density and ion energy. In this paper, we present our results on ICP-RIE of epitaxial III-N materials, namely c-plane and a-plane oriented GaN, AlN, AlxGa1-xN using various chlorine plasma chemistries based on Cl2 and BCl3. We have examined the role of BCl3 deoxidising pre-treatment on the etching of AlGaN alloys.

  9. Group III nitride semiconductors for short wavelength light-emitting devices

    NASA Astrophysics Data System (ADS)

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  10. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Palai, Ratnakar

    2016-10-01

    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  11. Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

    NASA Astrophysics Data System (ADS)

    Saygi, S.; Koudymov, A.; Adivarahan, V.; Yang, J.; Simin, G.; Khan, M. Asif; Deng, J.; Gaska, R.; Shur, M. S.

    2005-07-01

    The real-space transfer effect in a SiO2/AlGaN /GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C-V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to two times compared to conventional Schottky-gate structures) can be achieved. The real-space charge transfer effect in MOSH structures also opens up a way to design novel devices such as variable capacitors, multistate switches, memory cells, etc.

  12. III-Nitride Nanowire Lasers

    SciTech Connect

    Wright, Jeremy Benjamin

    2014-07-01

    In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices. Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that emit

  13. III-nitride nanowire lasers

    NASA Astrophysics Data System (ADS)

    Wright, Jeremy Benjamin

    In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key figure of merit that allows for nanowire lasing is the relatively high optical confinement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices. Two devices were designed to reduce the number of lasing modes to achieve single-mode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode operation. The first method involves reducing the diameter of individual nanowires to the cut-off condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter efficiency. Advances in nanowire fabrication, specifically a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip

  14. III-Nitride full-scale high-resolution microdisplays

    NASA Astrophysics Data System (ADS)

    Day, Jacob; Li, J.; Lie, D. Y. C.; Bradford, Charles; Lin, J. Y.; Jiang, H. X.

    2011-07-01

    We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (µLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between µLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

  15. III-Nitride nanowire optoelectronics

    NASA Astrophysics Data System (ADS)

    Zhao, Songrui; Nguyen, Hieu P. T.; Kibria, Md. G.; Mi, Zetian

    2015-11-01

    Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2 eV for AlN) to the near infrared (~0.65 eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices, including light emitting diodes, lasers, photodetectors, single photon sources, intraband devices, solar cells, and artificial photosynthesis. The present challenges and future prospects of III-nitride nanowire optoelectronic devices are also discussed.

  16. Lateral electrochemical etching of III-nitride materials for microfabrication

    DOEpatents

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  17. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  18. Wurtzite-derived ternary I-III-O2 semiconductors.

    PubMed

    Omata, Takahisa; Nagatani, Hiraku; Suzuki, Issei; Kita, Masao

    2015-04-01

    Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I-III-O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I-III-O2 semiconductors.

  19. Wurtzite-derived ternary I–III–O2 semiconductors

    PubMed Central

    Nagatani, Hiraku; Suzuki, Issei; Kita, Masao

    2015-01-01

    Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors. PMID:27877769

  20. Recent Advances in III-Nitride UV Photonics

    NASA Astrophysics Data System (ADS)

    Jiang, Hongxing

    2004-03-01

    There is a great need of solid-state ultraviolet (UV) emitters for chemical and biological agent detections and general lighting. The availability of chip-scale UV light sources may also open up new applications for medical research in areas of early disease detection. Although many of the ideas and potentials of III-nitride devices for UV applications have been identified, a transition from basic research to practical device components has not yet been made due to various technological obstacles. Several key issues must be resolved. For example, highly conductive n-type and p-type AlGaN alloys as well as device quality quantum wells (QWs) based on AlGaN or AlInGaN alloys with high Al-contents are indispensable. This presentation will discuss some of the recent progresses in epitaxial growth and fundamental studies of high Al content III-nitride alloys. Novel techniques for obtaining highly conductive n-type and p-type III-nitride alloys with high Al contents and high quality QWs with deep UV emission will be discussed. Optical properties that are unique to this ultrahigh bandgap semiconductor material system will be highlighted. Innovative approaches for enhancing the extraction efficiencies of UV emitters, including the incorporation of micro-size emitter arrays and submicron/nano-scale photonic crystals into UV emitters, will be presented. Finally, remaining challenges and future prospects of nitride UV photonics and nanophotonics will be discussed.

  1. X-ray diffraction of III-nitrides

    NASA Astrophysics Data System (ADS)

    Moram, M A; Vickers, M E

    2009-03-01

    The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.

  2. Design of Integrated III-Nitride/Non-III-Nitride Tandem Photovoltaic Devices

    SciTech Connect

    Toledo, N. G.; Friedman, D..J.; Farrell, R. M.; Perl, E. E.; Lin, C. T.; Bowers, J. E.; Speck, J. S.; Mishra, U. K.

    2012-03-01

    The integration of III-nitride and non-III-nitride materials for tandem solar cell applications can improve the efficiency of the photovoltaic device due to the added power contributed by the III-nitride top cell to that of high-efficiency multi-junction non-III-nitride solar cells if the device components are properly designed and optimized. The proposed tandem solar cell is comprised of a III-nitride top cell bonded to a non-III-nitride, series-constrained, multi-junction subcell. The top cell is electrically isolated, but optically coupled to the underlying subcell. The use of a III-nitride top cell is potentially beneficial when the top junction of a stand-alone non-III-nitride subcell generates more photocurrent than the limiting current of the non-III-nitride subcell. Light producing this excess current can either be redirected to the III-nitride top cell through high energy photon absorption, redirected to the lower junctions through layer thickness optimization, or a combination of both, resulting in improved total efficiency. When the non-III-nitride cell's top junction is the limiting junction, the minimum power conversion efficiency that the III-nitride top cell must contribute should compensate for the spectrum filtered from the multi-junction subcell for this design to be useful. As the III-nitride absorption edge wavelength, {lambda}{sub N}, increases, the performance of the multi-junction subcell decreases due to spectral filtering. In the most common spectra of interest (AM1.5G, AM1.5 D, and AM0), the technology to grow InGaN cells with {lambda}{sub N}<520 nm is found to be sufficient for III-nitride top cell applications. The external quantum efficiency performance, however, of state-of-the-art InGaN solar cells still needs to be improved. The effects of surface/interface reflections are also presented. The management of these reflection issues determines the feasibility of the integrated III-nitride/non-III-nitride design to improve overall cell

  3. Enhanced thermaly managed packaging for III-nitride light emitters

    NASA Astrophysics Data System (ADS)

    Kudsieh, Nicolas

    In this Dissertation our work on `enhanced thermally managed packaging of high power semiconductor light sources for solid state lighting (SSL)' is presented. The motivation of this research and development is to design thermally high stable cost-efficient packaging of single and multi-chip arrays of III-nitrides wide bandgap semiconductor light sources through mathematical modeling and simulations. Major issues linked with this technology are device overheating which causes serious degradation in their illumination intensity and decrease in the lifetime. In the introduction the basics of III-nitrides WBG semiconductor light emitters are presented along with necessary thermal management of high power cingulated and multi-chip LEDs and laser diodes. This work starts at chip level followed by its extension to fully packaged lighting modules and devices. Different III-nitride structures of multi-quantum well InGaN/GaN and AlGaN/GaN based LEDs and LDs were analyzed using advanced modeling and simulation for different packaging designs and high thermal conductivity materials. Study started with basic surface mounted devices using conventional packaging strategies and was concluded with the latest thermal management of chip-on-plate (COP) method. Newly discovered high thermal conductivity materials have also been incorporated for this work. Our study also presents the new approach of 2D heat spreaders using such materials for SSL and micro LED array packaging. Most of the work has been presented in international conferences proceedings and peer review journals. Some of the latest work has also been submitted to well reputed international journals which are currently been reviewed for publication. .

  4. Transient Transport in Binary and Ternary Semiconductors.

    DTIC Science & Technology

    1986-02-27

    transport; Semiconductors, Microelectronics, Quantum transport , Boltzmann transport, Drift and diffusion, Gallium arsende, Aluminum gallium arsenide, Indium gallium arsenide, and Transient transport.

  5. III-nitride-based avalanche photo detectors

    NASA Astrophysics Data System (ADS)

    McClintock, Ryan; Cicek, Erdem; Vashaei, Zahra; Bayram, Can; Razeghi, Manijeh; Ulmer, Melville P.

    2010-08-01

    Research into III-Nitride based avalanche photodiodes (APDs) is motivated by the need for high sensitivity ultraviolet (UV) detectors in numerous civilian and military applications. By designing III-Nitride photodetectors that utilize low-noise impact ionization high internal gain can be realized-GaN APDs operating in Geiger mode can achieve gains exceeding 1×107. Thus with careful design, it becomes possible to count photons at the single photon level. In this paper we review the current state of the art in III-Nitride visible-blind APDs and discuss the critical design choices necessary to achieve high performance Geiger mode devices. Other major technical issues associated with the realization of visible-blind Geiger mode APDs are also discussed in detail and future prospects for improving upon the performance of these devices are outlined. The photon detection efficiency, dark count rate, and spectral response of or most recent Geiger-mode GaN APDs on free-standing GaN substrates are studied under low photon fluxes, with single photon detection capabilities being demonstrated. We also present our latest results regarding linear mode gain uniformity: the study of gain uniformity helps reveal the spatial origins of gain so that we can better understand the role of defects.

  6. Urbach's tail in III-nitrides under an electric field

    SciTech Connect

    Rodrigues, Cloves G.; Vasconcellos, Aurea R.; Luzzi, Roberto; Freire, V. N.

    2001-08-15

    We consider electron-hole recombination in wide-gap strong-polar semiconductors of the III-nitride family under high electric fields. The calculated low-energy side of the luminescense spectrum displays the so-called Urbach's tail, which is characterized as resulting from the presence of sidebands in the form of replicas of the main band, corresponding to recombination with accompanying emission of one, two, etc., LO phonons. The influence of the nonequilibrium macroscopic state of hot carriers and phonons on the luminescence spectrum is evidenced. Our results for a 45 kV/cm electric field intensity point to 50, 120, and 220 meV Urbach tail widths in, respectively, wurtzite InN, GaN, and AlN. {copyright} 2001 American Institute of Physics.

  7. Wide Bandgap III-Nitride Micro- and Nano-Photonics

    DTIC Science & Technology

    2008-05-05

    AND DATES COVERED Final Report 10/2003 – 10/2007 4. TITLE AND SUBTITLE Wide Bandgap III-Nitride Micro - and Nano -Photonics 5. FUNDING NUMBERS...device issues and to explore potential applications of III-nitrides for UV micro - and nano -photonic devices. The KSU team has achieved 1. n-type...Award No: DAAD19-03-1-0337 Project Title: Wide Bandgap III-Nitride Micro - and Nano -Photonics PI Name: Hongxing Jiang & Jingyu Lin PI Address

  8. Polarization-induced tunnel junctions in III-nitrides for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Grundmann, Michael

    III-nitride semiconductors have the potential for very powerful electrostatic field engineering through the manipulation of polarization charges. This work explores the use of polarization fields for use in tunnel junctions for wide bandgap semiconductors, in particular. These tunnel junctions allowed light emitting diodes with multiple active regions, multiple colors, and eliminated p-type contacts. In addition, since the tunnel junction is formed without space-charge from dopants, this type of tunnel junction enables a single or multiple active region bipolar light emitting diode without any p-type material. These five types of devices were created and the characteristics of each are presented here. The creation of an efficient tunnel junction in the III-nitrides opens multiple future device engineering avenues in both emitters and absorbers; in particular, a stacked Schottky solar cell is proposed to make an ultra-efficient photovoltaic.

  9. Molten-Salt-Based Growth of Group III Nitrides

    DOEpatents

    Waldrip, Karen E.; Tsao, Jeffrey Y.; Kerley, Thomas M.

    2008-10-14

    A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

  10. Vertical III-nitride thin-film power diode

    DOEpatents

    Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

    2017-03-14

    A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

  11. Fabrication and characterization of III-nitride nanophotonic devices

    NASA Astrophysics Data System (ADS)

    Dahal, Rajendra Prasad

    III-nitride photonic devices such as photodetectors (PDs), light emitting diode (LEDs), solar cells and optical waveguide amplifiers were designed, fabricated and characterized. High quality AlN epilayers were grown on sapphire and n-SiC substrates by metal organic chemical vapor deposition and utilized as active deep UV (DUV) photonic materials for the demonstration of metal-semiconductor-metal (MSM) detectors, Schottky barrier detectors, and avalanche photodetectors (APDs). AlN DUV PDs exhibited peak responsivity at 200 nm with a very sharp cutoff wavelength at 207 nm and extremely low dark current (<10 fA), very high breakdown voltages, high responsivity, and more than four orders of DUV to UV/visible rejection ratio. AlN Schottky PDs grown on n-SiC substrates exhibited high zero bias responsivity and a thermal energy limited detectivity of about 1.0 x 1015 cm Hz 1/2 W-1. The linear mode operation of AlN APDs with the shortest cutoff wavelength (210 nm) and a photocurrent multiplication of 1200 was demonstrated. A linear relationship between device size and breakdown field was observed for AlN APDs. Photovoltaic operation of InGaN solar cells in wavelengths longer than that of previous attainments was demonstrated by utilizing In xGa1-xN/GaN MQWs as the active layer. InxGa1-xN/GaN MQWs solar cells with x =0.3 exhibited open circuit voltage of about 2 V, a fill factor of about 60% and external quantum efficiency of 40% at 420 nm and 10% at 450 nm. The performance of InxGa1-xN/GaN MQWs solar cell was found to be highly correlated with the crystalline quality of the InxGa 1-xN active layer. The possible causes of poorer PV characteristics for higher In content in InGaN active layer were explained. Photoluminescence excitation studies of GaN:Er and In0.06Ga 0.94N:Er epilayers showed that Er emission intensity at 1.54 mum increases significantly as the excitation energy is tuned from below to above the energy bandgap of these epilayers. Current-injected 1.54 mum LEDs

  12. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

    NASA Astrophysics Data System (ADS)

    Amano, Hiroshi

    2013-05-01

    Thin films of III-V compound semiconductors such as GaAs and InP can be grown on native substrates, whereas such growth was difficult for group III nitride semiconductors. Despite this drawback, scientists have gradually become able to use the functions of group III nitride semiconductors by growing their thin films on non-native substrates such as sapphire and Si substrates. With the continuously increasing demand for the conservation and generation of energy, bulk substrates of group III nitride semiconductors are highly expected to maximize their potential. In this report, I review the current status of the growth methods for bulk GaN single crystals used for substrates as well as summarize the characteristics of blue light-emitting diodes (LEDs), heterojunction field-effect transistors (HFETs), and photovoltaic cells on GaN substrates.

  13. High efficiency III-nitride light-emitting diodes

    DOEpatents

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  14. Making Single-Source Precursors of Ternary Semiconductors

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius; Banger, Kulbindre K.

    2007-01-01

    A synthesis route has been developed for the commercial manufacture of single- source precursors of chalcopyrite semiconductor absorber layers of thin-film solar photovoltaic cells. A closely related class of single-source precursors of these semiconductors, and their synthesis routes, were reported in "Improved Single-Source Precursors for Solar-Cell Absorbers" (LEW-17445-1), NASA Tech Briefs, Vol. 31, No. 6 (June 2007), page 56. The present synthesis route is better suited to commercialization because it is simpler and involves the use of commercially available agents, yet offers the flexibility needed for synthesis of a variety of precursors. A single-source precursor of the type of interest here is denoted by the general formula L2M'(mu-ER)2M(ER)2, where L signifies a Lewis base; M signifies Al, In, or Ga; M' signifies Ag or Cu; R signifies an alkyl, aryl, silyl, or perfluorocarbon group; E signifies O, S, Se, or Te; and mu signifies a bridging ligand. This compound can be synthesized in a "one-pot" procedure from ingredients that are readily available from almost any chemical supplier. In a demonstration, the following synthesis was performed: Under anaerobic conditions, InCl3 was reacted with sodium ethanethiolate in methanol in a 1:4 molar ratio to afford the ionic stable intermediate compound Na+[In(SEt)4]- (where Et signifies ethyl group). After approximately 15 minutes, a heterogeneous solution of CuCl and the Lewis base PPh3 (where Ph signifies phenyl) in a 1:2 ratio in a mixture of CH3CN and CH2Cl2 was added directly to the freshly prepared Na+[In(SEt)4]-. After 24 hours, the reaction was essentially complete. The methanolic solution was concentrated, then the product was extracted with CH2Cl2, then the product was washed with dry ether and pentane. The product in its final form was a creamy white solid. Spectroscopic and elemental analysis confirmed that the product was (PPh3)2Cu(mu-SEt)2In(mu-SEt)2, which is known to be a precursor of the ternary

  15. From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics

    NASA Astrophysics Data System (ADS)

    Gogneau, N.; Jamond, N.; Chrétien, P.; Houzé, F.; Lefeuvre, E.; Tchernycheva, M.

    2016-10-01

    Ambient energy harvesting using piezoelectric nanomaterials is today considered as a promising way to supply microelectronic devices. Since the first demonstration of electrical energy generation from piezoelectric semiconductor nanowires in 2006, the piezoelectric response of 1D-nanostructures and the development of nanowire-based piezogenerators have become a hot topic in nanoscience. After several years of intense research on ZnO nanowires, III-nitride nanomaterials have started to be explored thanks to their high piezoelectric coefficients and their strong piezogeneration response. This review describes the present status of the field of piezoelectric energy generation with nitride nanowires. After presenting the main motivation and a general overview of the domain, a short description of the main properties of III-nitride nanomaterials is given. Then we review the piezoelectric responses of III-N nanowires and the specificities of the piezogeneration mechanism in these nanostructures. Finally, the design and performance of the macroscopic piezogenerators based on nitride nanowire arrays are described, showing the promise of III-nitride nanowires for ultra-compact and efficient piezoelectric generators.

  16. Polarization Effects in Group III-Nitride Materials and Devices

    NASA Astrophysics Data System (ADS)

    Wei, Qiyuan

    Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence of the polarization is calculated and in-plane polarization is revealed. The in-plane polarization is sensitive to the lateral characteristic dimension determined by the microstructure. Specific semi-polar plane growth is suggested for reducing quantum-confined Stark effect. The macroscopic electrostatic field from the polarization discontinuity in the heterostructures is discussed, b ased on that, the band diagram of InGaN/GaN quantum well/barrier and AlGaN/GaN heterojunction is obtained from the self-consistent solution of Schrodinger and Poisson equations. New device design such as triangular quantum well with the quenched polarization field is proposed. Electron holography in the transmission electron microscopy is used to examine the electrostatic potential under polarization effects. The measured potential energy profiles of heterostructure are compared with the band simulation, and evidences of two-dimensional hole gas (2DHG) in a wurtzite AlGaN/ AlN/ GaN superlattice, as well as quasi two-dimensional electron gas (2DEG) in a zinc-blende AlGaN/GaN are found. The large polarization discontinuity of AlN/GaN is the main source of the 2DHG of wurtzite nitrides, while the impurity introduced during the growth of AlGaN layer provides the donor states that to a great extent balance the free electrons in zinc-blende nitrides. It is also found that the quasi-2DEG concentration in zinc-blende AlGaN/GaN is about one order of magnitude lower than the wurtzite AlGaN/GaN, due to the absence of polarization. Finally, the InAlN/GaN lattice-matched epitaxy, which ideally has a zero piezoelectric polarization and strong spontaneous polarization, is experimentally studied. The breakdown in

  17. Progress in periodically oriented III-nitride materials

    NASA Astrophysics Data System (ADS)

    Hite, Jennifer

    2016-12-01

    The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures (>500 mm) for uses in frequency conversion are highlighted.

  18. First-principles investigation of CO2 absorption on III-nitride surfaces

    NASA Astrophysics Data System (ADS)

    Chen, Ying-Chin; Guo, Hong

    2015-03-01

    Photon-induced chemical transformation of CO2 is a very interesting direction of green-house gas reduction. An accurate description of electronic structure at the interface between CO2 and the photocatalytics is important for understanding the process of artificial photosynthesis. In this work we report density functional theory (DFT) and many-body GW calculations to investigate CO2 adsorption on III-nitride semiconductor surface. The adsorption geometry is determined at the DFT level and the electronic structure is investigated at both DFT and GW levels. A detailed illustration of how the molecular orbital is renormalized is addressed.

  19. First-principles investigations of III-nitride bulk and surface properties

    NASA Astrophysics Data System (ADS)

    Dreyer, Cyrus Eduard

    The III-nitride semiconductors, including AlN, InN, GaN, and BN have been demonstrated as technologically exciting materials for a wide range of device applications. With band gaps that span the visible range, GaN, InN, and InGaN alloys are used for high efficiency light emitting diodes for general lighting, as well as laser diodes for optical storage. The wide gaps, large band offsets, and polarization fields in AlN, GaN, and AlGaN alloys are promising for high-frequency, high-power transistors with applications in power conversion and radio frequency amplifiers. Despite the plethora of attractive material parameters of the III-nitride materials there are several issues that significantly limit the efficiency of devices and range of possible applications. In this study, we use first-principles electronic structure calculations to explore several of these properties relevant to understanding growth, processing, and device design. Arguably the most detrimental issue in this material system is the lack of widely available, cost-effective substrates for the growth of films and devices. Heteroepitaxy, as well as the lattice mismatch between the layers of different III-nitride alloys in heterostructures, results in residual stresses in films and devices. Such stress will alter the electronic structure of the materials, so it is necessary for device design to be able to quantify these effects. We explore the influence of strain on the effective mass of carriers in GaN and AlN, a parameter that is tied to the conductivity. In addition, films under tensile strain can crack if the strain energy is sufficient. We explore the propensity for AlN, GaN, and AlGaN to crack on different crystallographic planes. There has been significant work done to overcome the issue of residual strains in III-nitride films, both through the growth of bulk crystals for substrates, and the growth of structures such as nanowires that avoid many of the thickness and alloy-content limitations of

  20. III-nitride nanowires : growth, properties, and applications.

    SciTech Connect

    Armstrong, Andrew M.; Arslan, Ilke; Upadhya, Prashanth C.; Li, Qiming; Wang, George T.; Talin, Albert Alec; Prasankumar, Rohit P.; Lin, Yong; Huang, Jian Yu

    2010-06-01

    Nanowires based on the III nitride materials system have attracted attention as potential nanoscale building blocks in optoelectronics, sensing, and electronics. However, before such applications can be realized, several challenges exist in the areas of controlled and ordered nanowire synthesis, fabrication of advanced nanowire heterostructures, and understanding and controlling the nanowire electrical and optical properties. Here, recent work is presented involving the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using advanced electrical, optical and structural characterization techniques.

  1. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOEpatents

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  2. Theory of gain in group-III nitride lasers

    SciTech Connect

    Chow, W.W.; Wright, A.F.; Girndt, A.

    1997-06-01

    A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

  3. Methods for improved growth of group III nitride buffer layers

    DOEpatents

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  4. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

    NASA Astrophysics Data System (ADS)

    Smirnov, A. M.; Young, E. C.; Bougrov, V. E.; Speck, J. S.; Romanov, A. E.

    2016-01-01

    We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ˜70° for Al0.13Ga0.87N/GaN ( h 0 h ¯ 1 ) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1-xN/GaN heterostructures.

  5. Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

    PubMed Central

    Oh, Munsik; Jin, Won-Yong; Jun Jeong, Hyeon; Jeong, Mun Seok; Kang, Jae-Wook; Kim, Hyunsoo

    2015-01-01

    Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 96.5% at 450 nm and a low sheet resistance of 11.7 Ω/sq were demonstrated as TCEs in inorganic III-nitride LEDs. The transmission line model applied to the AgNW contact to p-GaN showed that near ohmic contact with a specific contact resistance of ~10−3 Ωcm2 was obtained. The contact resistance had a strong bias-voltage (or current-density) dependence: namely, field-enhanced ohmic contact. LEDs fabricated with AgNW electrodes exhibited a 56% reduction in series resistance, 56.5% brighter output power, a 67.5% reduction in efficiency droop, and a approximately 30% longer current spreading length compared to LEDs fabricated with reference TCEs. In addition to the cost reduction, the observed improvements in device performance suggest that the AgNWs are promising for application as next-generation TCEs, to realise brighter, larger-area, cost-competitive inorganic III-nitride light emitters. PMID:26333768

  6. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  7. Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

    2016-01-01

    One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

  8. Contact mechanisms and design principles for Schottky contacts to group-III nitrides

    NASA Astrophysics Data System (ADS)

    Mohammad, S. Noor

    2005-03-01

    Contact mechanisms and design principles for Schottky contacts to group-III nitrides have been studied. These contacts, made generally by using simple principles and past experiences, suffer from serious drawbacks. The importance of various parameters such as surface morphology, surface treatment, metal/semiconductor interactions at the interface, thermal stability, minimization of doping by metal deposition and etching, elimination of edge electric field, etc., for them has been thoroughly investigated. Several design principles have been proposed. Both theoretical and experimental data have been presented to justify the validity of the proposed contact mechanisms and design principles. While theoretical calculations provide fundamental physics underlying heavy doping, leakage, etc., the experimental data provide verification of the contact mechanisms and design principles. The proposed principles are general enough to be applicable to most, if not all, Schottky contacts.

  9. III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared

    PubMed Central

    Shubina, T. V.; Pozina, G.; Jmerik, V. N.; Davydov, V. Yu.; Hemmingsson, C.; Andrianov, A. V.; Kazanov, D. R.; Ivanov, S. V.

    2015-01-01

    Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are much in demand. Here, we present site-controlled III-nitride monocrystal cup-cavities grown by molecular beam epitaxy. The cup-cavities can operate from ultraviolet to near-infrared, supporting quasi whispering gallery modes up to room temperature. Besides, their energies are identical in large ’ripened’ crystals. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the spatial redistribution of electric field intensity with concentration of light into a subwavelength volume. Our results shed light on the mode behavior in semiconductor cavities and open the way for single-growth-run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies. PMID:26656267

  10. Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures

    DOE PAGES

    Benz, Alexander; Campione, Salvatore; Moseley, Michael W.; ...

    2014-08-25

    We present the design, realization, and characterization of optical strong light–matter coupling between intersubband transitions within a semiconductor heterostructures and planar metamaterials in the near-infrared spectral range. The strong light–matter coupling entity consists of a III-nitride intersubband superlattice heterostructure, providing a two-level system with a transition energy of ~0.8 eV (λ ~1.55 μm) and a planar “dogbone” metamaterial structure. Furthermore, as the bare metamaterial resonance frequency is varied across the intersubband resonance, a clear anticrossing behavior is observed in the frequency domain. We found that this strongly coupled entity could enable the realization of electrically tunable optical filters, a newmore » class of efficient nonlinear optical materials, or intersubband-based light-emitting diodes.« less

  11. Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures

    SciTech Connect

    Benz, Alexander; Campione, Salvatore; Moseley, Michael W.; Wierer, Jonathan J.; Allerman, Andrew A.; Wendt, Joel R.; Brener, Igal

    2014-08-25

    We present the design, realization, and characterization of optical strong light–matter coupling between intersubband transitions within a semiconductor heterostructures and planar metamaterials in the near-infrared spectral range. The strong light–matter coupling entity consists of a III-nitride intersubband superlattice heterostructure, providing a two-level system with a transition energy of ~0.8 eV (λ ~1.55 μm) and a planar “dogbone” metamaterial structure. Furthermore, as the bare metamaterial resonance frequency is varied across the intersubband resonance, a clear anticrossing behavior is observed in the frequency domain. We found that this strongly coupled entity could enable the realization of electrically tunable optical filters, a new class of efficient nonlinear optical materials, or intersubband-based light-emitting diodes.

  12. Photoluminescence changes of III-Nitride lateral polarity structures after chemical functionalization

    NASA Astrophysics Data System (ADS)

    Berg, Nora G.; Franke, Alexander; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena

    2016-12-01

    The photoluminescence changes of a III-Nitride semiconductor with various surface topographies were studied after chemical functionalization. Al x Ga1-x N with a composition of 70% aluminum was used and the surfaces were functionalized with a fluorophore dye-terminated peptide using a linker molecule. The stability of the wafers in water was studied using inductively coupled plasma mass spectrometry prior to modifying the material. The leaching data demonstrated that the AlGaN material in highly stable in biological conditions over 7 d. The attachment of the dye to the wafer was investigated using x-ray photoelectron spectroscopy and photoluminescence spectroscopy (PL). The PL spectrum showed a clear signature of the dye with a pronounced emission peak at approximately 260 nm, indicating a successful attachment to the surface.

  13. Design of III-Nitride Hot Electron Transistors

    NASA Astrophysics Data System (ADS)

    Gupta, Geetak

    III-Nitride based devices have made great progress over the past few decades in electronics and photonics applications. As the technology and theoretical understanding of the III-N system matures, the limitations on further development are based on very basic electronic properties of the material, one of which is electron scattering (or ballistic electron effects). This thesis explores the design space of III-N based ballistic electron transistors using novel design, growth and process techniques. The hot electron transistor (HET) is a unipolar vertical device that operates on the principle of injecting electrons over a high-energy barrier (φBE) called the emitter into an n-doped region called base and finally collecting the high energy electrons (hot electrons) over another barrier (φBC) called the collector barrier. The injected electrons traverse the base in a quasi-ballistic manner. Electrons that get scattered in the base contribute to base current. High gain in the HET is thus achieved by enabling ballistic transport of electrons in the base. In addition, low leakage across the collector barrier (I BCleak) and low base resistance (RB) are needed to achieve high performance. Because of device attributes such as vertical structure, ballistic transport and low-resistance n-type base, the HET has the potential of operating at very high frequencies. Electrical measurements of a HET structure can be used to understand high-energy electron physics and extract information like mean free path in semiconductors. The III-Nitride material system is particularly suited for HETs as it offers a wide range of DeltaEcs and polarization charges which can be engineered to obtain barriers which can inject hot-electrons and have low leakage at room temperature. In addition, polarization charges in the III-N system can be engineered to obtain a high-density and high-mobility 2DEG in the base, which can be used to reduce base resistance and allow vertical scaling. With these

  14. Fabrication and Optical Recombination in III-Nitride Microstructures and Devices

    DTIC Science & Technology

    2003-10-01

    Fabrication and optical investigations of III-nitride microstructures Our group has pioneered the fabrication of micro - and nano -size photonic... pumped individual III-nitride micro -size LEDs and micro -LED arrays and observed enhanced quantum efficiencies. The micro -size LEDs were fabricated...quality III-nitride QWs, heterostructures, microstructures, and micro -devices and to study their optical and optoeletronic properties. By optimizing

  15. Copper-based ternary and quaternary semiconductor nanoplates: templated synthesis, characterization, and photoelectrochemical properties.

    PubMed

    Wu, Xue-Jun; Huang, Xiao; Qi, Xiaoying; Li, Hai; Li, Bing; Zhang, Hua

    2014-08-18

    Two-dimensional (2D) copper-based ternary and quaternary semiconductors are promising building blocks for the construction of efficient solution-processed photovoltaic devices at low cost. However, the facile synthesis of such 2D nanoplates with well-defined shape and uniform size remains a challenge. Reported herein is a universal template-mediated method for preparing copper-based ternary and quaternary chalcogenide nanoplates, that is, CuInS2, CuIn(x)Ga(1-x)S2, and Cu2ZnSnS4, by using a pre-synthesized CuS nanoplate as the starting template. The various synthesized nanoplates are monophasic with uniform thickness and lateral size. As a proof of concept, the Cu2ZnSnS4 nanoplates were immobilized on a Mo/glass substrate and used as semiconductor photoelectrode, thus showing stable photoelectrochemical response. The method is general and provides future opportunities for fabrication of cost-effective photovoltaic devices based on 2D semiconductors.

  16. The anharmonic phonon decay rate in group-III nitrides

    NASA Astrophysics Data System (ADS)

    Srivastava, G. P.

    2009-04-01

    Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallée-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A1(LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

  17. Prospects of III-nitride optoelectronics grown on Si

    NASA Astrophysics Data System (ADS)

    Zhu, D.; Wallis, D. J.; Humphreys, C. J.

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  18. Prospects of III-nitride optoelectronics grown on Si.

    PubMed

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-10-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

  19. Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

    SciTech Connect

    Lawniczak-Jablonska, K. |; Liliental-Weber, Z.; Gullikson, E.M.

    1997-04-01

    Group III nitrides (AlN, GaN, and InN) consist of the semiconductors which appear recently as a basic materials for optoelectronic devices active in the visible/ultraviolet spectrum as well as high-temperature and high-power microelectronic devices. However, understanding of the basic physical properties leading to application is still not satisfactory. One of the reasons consists in unsufficient knowledge of the band structure of the considered semiconductors. Several theoretical studies of III-nitrides band structure have been published but relatively few experimental studies have been carried out, particularly with respect to their conduction band structure. This motivated the authors to examine the conduction band structure projected onto p-states of the nitrogen atoms for AlN, GaN and InN. An additional advantage of their studies is the availability of the studied nitrides in two structures, hexagonal (wurtzite) and cubic (zincblende). This offers an opportunity to gain information about the role of the anisotropy of electronic band states in determining various physical properties.

  20. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

    NASA Astrophysics Data System (ADS)

    Sellés, J.; Crepel, V.; Roland, I.; El Kurdi, M.; Checoury, X.; Boucaud, P.; Mexis, M.; Leroux, M.; Damilano, B.; Rennesson, S.; Semond, F.; Gayral, B.; Brimont, C.; Guillet, T.

    2016-12-01

    We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm-470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume "thresholdless" lasers.

  1. Role of defects in III-nitride based electronics

    SciTech Connect

    HAN,JUNG; MYERS JR.,SAMUEL M.; FOLLSTAEDT,DAVID M.; WRIGHT,ALAN F.; CRAWFORD,MARY H.; LEE,STEPHEN R.; SEAGER,CARLETON H.; SHUL,RANDY J.; BACA,ALBERT G.

    2000-01-01

    The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in GaN, including its bonding, diffusion, and activation behaviors, (3) the calculation of energetic of various defects including planar stacking faults, threading dislocations, and point defects in GaN, and (4) dry etching (plasma etching) of GaN (n- and p-types) and AlGaN. The result of the first AlGaN/GaN heterojunction bipolar transistor is also presented.

  2. Propagating Polaritons in III-Nitride Slab Waveguides

    NASA Astrophysics Data System (ADS)

    Ciers, J.; Roch, J. G.; Carlin, J.-F.; Jacopin, G.; Butté, R.; Grandjean, N.

    2017-03-01

    We report on III-nitride waveguides with c -plane GaN /(Al ,Ga )N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overlap between the optical mode and the active region, a polariton decay length up to 100 μ m for photonlike polaritons and a lifetime of 1 to 2 ps, with the latter values being essentially limited by residual absorption occurring in the waveguide. The fully lattice-matched nature of the structure allows for very low disorder and high in-plane homogeneity, which is an important asset for the realization of polaritonic integrated circuits that could support nonlinear polariton wave packets up to room temperature thanks to the large exciton binding energy of 40 meV.

  3. Electrical properties of dislocations in III-Nitrides

    SciTech Connect

    Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A.

    2014-02-21

    Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

  4. Improvements to III-nitride light-emitting diodes through characterization and material growth

    NASA Astrophysics Data System (ADS)

    Getty, Amorette Rose Klug

    A variety of experiments were conducted to improve or aid the improvement of the efficiency of III-nitride light-emitting diodes (LEDs), which are a critical area of research for multiple applications, including high-efficiency solid state lighting. To enhance the light extraction in ultraviolet LEDs grown on SiC substrates, a distributed Bragg reflector (DBR) optimized for operation in the range from 250 to 280 nm has been developed using MBE growth techniques. The best devices had a peak reflectivity of 80% with 19.5 periods, which is acceptable for the intended application. DBR surfaces were sufficiently smooth for subsequent epitaxy of the LED device. During the course of this work, pros and cons of AlGaN growth techniques, including analog versus digital alloying, were examined. This work highlighted a need for more accurate values of the refractive index of high-Al-content AlxGa1-xNin the UV wavelength range. We present refractive index results for a wide variety of materials pertinent to the fabrication of optical III-nitride devices. Characterization was done using Variable-Angle Spectroscopic Ellipsometry. The three binary nitrides, and all three ternaries, have been characterized to a greater or lesser extent depending on material compositions available. Semi-transparent p-contact materials and other thin metals for reflecting contacts have been examined to allow optimization of deposition conditions and to allow highly accurate modeling of the behavior of light within these devices. Standard substrate materials have also been characterized for completeness and as an indicator of the accuracy of our modeling technique. We have demonstrated a new technique for estimating the internal quantum efficiency (IQE) of nitride light-emitting diodes. This method is advantageous over the standard low-temperature photoluminescence-based method of estimating IQE, as the new method is conducted under the same conditions as normal device operation. We have developed

  5. Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

    NASA Technical Reports Server (NTRS)

    Hamakawa, Yoshihiro

    1993-01-01

    Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

  6. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Brebrick, R. F.; Burger, A.; Dudley, M.; Matyi, R.; Ramachandran, N.; Sha, Yi-Gao; Volz, M.; Shih, Hung-Dah

    1999-01-01

    Complete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Transport (PVT) of ZnSe and related ternary compound semiconductors have been performed. The analyses included thermodynamics, mass flux, heat treatment of starting material, crystal growth, partial pressure measurements, optical interferometry, chemical analyses, photoluminescence, microscopy, x-ray diffraction and topography as well as theoretical, analytical and numerical analyses. The experimental results showed the influence of gravity orientation on the characteristics of: (1) the morphology of the as-grown crystals as well as the as-grown surface morphology of ZnSe and Cr doped ZnSe crystals; (2) the distribution of impurities and defects in ZnSe grown crystals; and (3) the axial segregation in ZnSeTe grown crystals.

  7. Electronic and total energy properties of ternary and quaternary semiconductor compounds, alloys and superlattices

    NASA Technical Reports Server (NTRS)

    Lambrecht, Walter R. L.

    1992-01-01

    This proposal was mainly concerned with the theoretical study of semiconductor compounds, alloys, and superlattices of interest for photovoltaic applications. In the last year (1991) a study was devoted to metal/graphite bonding in relation to use of graphite fiber reinforcement of Cu for high thermal conductivity applications. The main research topics addressed during the full period of the grant are briefly described: studies of the In-Ga-As ternary system; band-offsets at common anion and InAs/GaSb/AlSb heterojunctions; alloy theory (cluster variation method); and Cu/graphite bonding. Most of the work was described more extensively in previous yearly reports and renewal applications and in publications. The last topic is described more fully in a separate report attached. A list of publications resulting directly from this grant or from other grants but related to this work and of conference presentations is given at the end.

  8. Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

    PubMed

    Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

    2014-09-24

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  9. III-nitride ultraviolet emitters produced by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Anirban

    In this dissertation, the growth of III-Nitride based ultraviolet (UV) emitters by molecular beam epitaxy has been addressed. These devices can find applications in optical data storage, solid-state lighting, and in biological detection. A significant part of the research involved materials development, as there are several major scientific and technological hurdles that must be overcome in order to produce commercially viable devices. For emission in the wavelength region 330 nm to 350 nm, the devices were designed as electrically-injected light emitting diodes (LEDs). Each layer of this structure was individually optimized to improve the materials properties. To overcome the difficulties in p-type doping, a new growth regime has been explored which led to films with hole concentrations of up to 2 x 10 18/cm3. Multiple quantum wells (MQWs) were grown along polar and non-polar directions to understand the effects of the presence of built-in polarization fields. It was found that these detrimental effects are minimized for ultra thin wells. Use of an Indium flux as a surfactant was found to substantially improve the luminescence properties of bulk Aluminum Gallium Nitride (AlGaN) alloys and MQWs. UV-LEDs grown under these optimized conditions show an optical power output of 0.75 mW at 340 nm and 4.5 mW at 350nm. For emission in the wavelength region below 270 nm, due to the difficulty of doping AlGaN alloys with high Aluminum Nitride (AlN) mole fraction, edge or vertical emitting electron beam-pumped laser structures have been developed. Since it is difficult to cleave III-Nitrides deposited onto C-plane sapphire, edge emitting laser structures using a Graded-Index Separate Confinement Heterostructure (GRINSCH) based geometry have been deposited onto A-plane sapphire using a novel AlN buffer layer. An AlGaN bulk film or a set of AlN/AlGaN MQWs is used as the active region. For use in these devices, the growth of high Al content AlGaN was optimized to reduce the deep

  10. Theoretical Study of Material and Device Properties of Group-III Nitrides

    NASA Astrophysics Data System (ADS)

    Yan, Qimin

    Group-III nitride semiconductors, including AlN, GaN, InN, and their alloys, are ideal materials for solid state lighting applications. Current research focuses on improving the efficiency by improvements in materials quality and novel device designs, for instance based on nonpolar and semipolar growth. The motivation for our work is to assist and guide the experimental development of high-performance solid state optoelectronic devices by performing computational studies. Our investigations range from basic structural and electronic properties of nitrides to the effects of device design on efficiency of light emission. In the area of fundamental properties, we performed a systematic study of strain effects on the electronic band structures of the group-III-nitrides (AlN, GaN and InN) using density-functional theory with an advanced hybrid functional as well as using the quasiparticle GW method. We present a complete set of deformation potentials that allows us to predict the band positions of group-III nitrides and their alloys (InGaN and AlGaN) under realistic strain conditions. We then employed the resulting first-principles deformation potentials to predict the effects of strain on transition energies and valence-band structures of c-plane, nonpolar, and semipolar InGaN alloy layers grown on GaN substrates, with particular attention to the role of strain in the polarized light emission. We also investigated the role of native defects in the optical properties of GaN and AlN, again using hybrid density-functional calculations. We established that complexes between Mg and nitrogen vacancies lead to the broad red luminescence that has often been observed in GaN. We find that isolated nitrogen vacancies can give rise to broad emission peaked at 2.18 eV. We show that isolated aluminum vacancies lead to an absorption peak at 3.43 eV and an emission peak at 2.73 eV. We also find that the complexes can give rise to absorption peaked at 3.97 eV and

  11. Impurity-induced disorder in III-nitride materials and devices

    DOEpatents

    Wierer, Jr., Jonathan J; Allerman, Andrew A

    2014-11-25

    A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

  12. High-Modulation-Speed LEDs Based on III-Nitride

    NASA Astrophysics Data System (ADS)

    Chen, Hong

    III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.

  13. Group III-nitride based hetero and quantum structures

    NASA Astrophysics Data System (ADS)

    Monemar, B.; Pozina, G.

    2000-11-01

    The present paper attempts an overview of a presently very active research field: the III-nitrides and their interesting possibilities for a range of device applications employing heterostructures and low-dimensional quantum structures. The family of materials containing AlN, GaN, InN and the alloys between them span a range of direct bandgaps between 6.2 and 1.9 eV, with very large band offsets in type I heterojunctions, which is very favourable for a number of interesting device concepts. A very important feature of these materials is the dominant influence of strong polarisation fields (spontaneous as well as piezo-electric) on the physical properties of multilayer structures, as well as on devices. Exciton binding energies are large, and excitonic effects are therefore important at room temperature. Many alloy systems, in particular InGaN, have a high miscibility gap, leading to a strong tendency for phase separation and consequently to many novel physical properties which yet have to be explored in detail. Localization effects for carriers and excitons are very important in quantum structures based on these alloys. Devices based on III-N heterostructures cover a wide range, from optical devices (violet lasers, LEDs covering a range from UV to red, white LEDs, photodetectors, UV cameras) to high-frequency power devices, both unipolar transistors (AlGaN/GaN HEMTs) and bipolar HBTs.

  14. III-nitride core–shell nanowire arrayed solar cells.

    PubMed

    Wierer, Jonathan J; Li, Qiming; Koleske, Daniel D; Lee, Stephen R; Wang, George T

    2012-05-17

    A solar cell based on a hybrid nanowire–film architecture consisting of a vertically aligned array of InGaN/GaN multi-quantum well core–shell nanowires which are electrically connected by a coalesced p-InGaN canopy layer is demonstrated. This unique hybrid structure allows for standard planar device processing, solving a key challenge with nanowire device integration, while enabling various advantages by the nanowire absorbing region such as higher indium composition InGaN layers by elastic strain relief, more efficient carrier collection in thinner layers, and enhanced light trapping from nano-scale optical index changes. This hybrid structure is fabricated into working solar cells exhibiting photoresponse out to 2.1 eV and short-circuit current densities of ~1 mA cm(-2) under 1 sun AM1.5G. This proof-of-concept nanowire-based device demonstrates a route forward for high-efficiency III-nitride solar cells.

  15. Prediction of positron-annihilation parameters for vacancy-type defects in ternary alloy semiconductors by data-scientific approach

    NASA Astrophysics Data System (ADS)

    Ishibashi, Shoji; Kino, Hiori; Uedono, Akira; Miyake, Takashi; Terakura, Kiyoyuki

    2017-01-01

    We calculated positron annihilation parameters for mono- and di-vacancies in ternary semiconductors Al0.5Ga0.5N and In0.5Ga0.5N. It has been found that the obtained annihilation parameters are well correlated with structural parameters. By constructing multiple linear regression models using selected (about 1/4 of the total) datasets as training sets in order to reduce computational cost, we could predict annihilation parameters for the rest.

  16. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor

    NASA Astrophysics Data System (ADS)

    Hamdani, K.; Chaouche, M.; Benabdeslem, M.; Bechiri, L.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Otmani, A.; Marie, P.

    2014-11-01

    Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling, starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu2SnSe3 materials. Thin films were prepared by thermal evaporation on Corning glass substrate at Ts = 300 °C. The structural, compositional, morphological and optical properties of the synthesized semiconductor have been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal structure, with the presence of Cu2Se as a secondary phase. On the other hand, the deposited films showed a cubic Cu2SnSe3 ternary phase and extra peaks belonging to some binary compounds. Furthermore, optical measurements showed that the deposited layers have a relatively high absorption coefficient of 105 cm-1 and present a band gap of 0.94 eV.

  17. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  18. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  19. Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Shakya, J.; Kim, K. H.; Lin, J. Y.; Jiang, H. X.

    2004-07-01

    III-nitride photonic crystal (PC) ultraviolet (UV) light-emitting diodes (LEDs) were fabricated. Triangular arrays of the PCs with different diameters/periodicities were patterned using electron-beam lithography and inductively coupled plasma dry etching. The optical power output of LEDs was enhanced by a factor of 2.5 due to PC formation. It was observed that the optical enhancement factor depends strongly on the lattice constant and hole size of the PCs. The achievement of nitride PCs is expected to benefit many applications of III-nitride optoelectronics, particularly for the improvement of extraction efficiency in III-nitride deep-UV emitters (λ <340nm), which are crucial for many important applications, but presently have a very low quantum efficiency.

  20. Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives

    NASA Astrophysics Data System (ADS)

    Karpov, Sergey Yu.

    2011-02-01

    Recent progress in III-nitride LED modeling is reviewed with the focus on physical models that provide a better understanding of such hot issues, as factors limiting the internal quantum efficiency of light emission and high-current efficiency droop, polarization doping in graded-composition III-nitride alloys and its utilization in LEDs, current crowding in LED dice and its impact on the light extraction efficiency, and optimal light conversion in white LED lamps. Specific features of III-nitride materials, their impact on the LED operation, and models accounting for these features are considered. Insufficient understanding of transport mechanisms of non-equilibrium electrons and holes and their localization in InGaN inhomogeneous active regions are discussed along with other still unsolved problems. Influence of technological factors on LED heterostructures and their operation is argued in the context of further model developments.

  1. Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application

    NASA Astrophysics Data System (ADS)

    Sarwar, ATM Golam

    Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light-emitting diodes (LEDs), lasers, solar cells, and sensors. The aim of this work is to investigate extreme heterostructures, which are impossible or very hard to realize in conventional planar films, exploiting the strain accommodation property of nanowires and engineer their band structure for novel electronic and photonic applications. To this end, in this thesis, III-Nitride semiconductor nanowires are investigated. In the first part of this work, a complete growth phase diagram of InN nanowires on silicon using plasma assisted molecular beam epitaxy is developed, and structural and optical characteristics are mapped as a function of growth parameters. Next, a novel up-side down pendeoepitaxial growth of InN forming mushroom-like microstructures is demonstrated and detail structural and optical characterizations are performed. Based on this, a method to grow strain-free large area single crystalline InN or thin film is proposed and the growth of InN on patterned GaN is investigated. The optimized growth conditions developed for InN are further used to grow InGaN nanowires graded over the whole composition range. Numerical energy band simulation is performed to better understand the effect of polarization charge on photo-carrier transport in these extremely graded nanowires. A novel photodetector device with negative differential photocurrent is demonstrated using the graded InGaN nanowires. In the second part of this thesis, polarization-induced nanowire light emitting diodes (PINLEDs) are investigated. The electrical and optical properties of the nanowire heterostructure are engineered and optimized for ultraviolet and deep ultraviolet applications. The electrical

  2. Transfer matrix method solving interface optical phonons in wurtzite core-multishell nanowires of III-nitrides

    NASA Astrophysics Data System (ADS)

    Xue, Z. X.; Qu, Y.; Xie, H.; Ban, S. L.

    2016-12-01

    Within the framework of dielectric continuum and Loudon's uniaxial crystal models, the transfer matrix method (TMM) is developed to investigate interface optical phonons (IOPs) in cylindrical wurtzite core-multishell nanowires (CMSNWs) consisting of ternary mixed crystals (TMCs). The IOPs in GaN/InxGa1-xN/InyGa1-yN and GaN/InxGa1-xN/InyGa1-yN/InzGa1-zN CMSNWs are calculated as examples. The results show that there may be several types of IOPs existing in certain frequency regions in CMSNWs for a given component due to the phonon dispersion anisotropy in wurtzite nitrides. The IOPs are classified by possible combinations of the interfaces in CMSNWs. Furthermore, the dispersion relations and electro-static potentials of each kind of IOPs are discussed in detail. The dispersion relations of IOPs in CMSNWs is found to be the combination of that in each nearest two layer CSNW. It can explain the fact that the total branch number of IOPs obey the 2n rule. It is also found that the peak positions of electro-static potentials are decided by the layer component order from the inner layer to outside in CMSNWs. The results indicate that TMM for IOPs is available and can be commodiously extended to other cylindrical wurtzite III-nitride CMSNWs. Based on this method, one can further discuss the IOPs related photoelectric properties in nitride CMSNWs consisting of TMCs.

  3. Method for Improving Mg Doping During Group-III Nitride MOCVD

    DOEpatents

    Creighton, J. Randall; Wang, George T.

    2008-11-11

    A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

  4. Method to grow group III-nitrides on copper using passivation layers

    DOEpatents

    Li, Qiming; Wang, George T; Figiel, Jeffrey T

    2014-06-03

    Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

  5. Estimations of the spontaneous polarization of binary and ternary compounds of group III nitrides

    NASA Astrophysics Data System (ADS)

    Davydov, S. Yu.; Posrednik, O. V.

    2016-04-01

    The dependences of spontaneous polarizations P sp of solid solutions of aluminum, gallium, and indium nitrides on the compositions were estimated using the Harrison bond-orbital method. A simple formula was proposed to estimate P sp using only lengths of the interatomic bonds between the nearest neighbor atoms and the angles between these bonds.

  6. Stable Solar-Blind Ultraviolet III-Nitride Photocathode for Astronomy Applications

    NASA Astrophysics Data System (ADS)

    Bell, Lloyd

    In this effort, we propose to develop a new type of cesium-free photocathode using III- nitride materials (GaN, AlN, and their alloys) to achieve highly efficient, solar blind, and stable ultraviolet (UV) response. Currently, detectors used in UV instruments utilize a photocathode to convert UV photons into electrons that are subsequently detected by microchannel plate or CCD. The performance of these detectors critically depends on the efficiency and stability of their photocathodes. In particular, photocathode instability is responsible for many of the fabrication difficulties commonly experienced with this class of detectors. In recent years, III-nitride (in particular GaN) photocathodes have been demonstrated with very high quantum efficiency (>50%) in parts of UV spectral range; however, these photocathodes still rely on cesiation for activation. The proposed photocathode structure will achieve activation through methods for band structure engineering such as delta- doping and polarization field engineering. Compared to the current state-of-the-art in flight-ready microchannel plate/Cs2Te sealed tubes, photocathodes based on III-nitride materials will increase the quantum efficiency by nearly an order of magnitude and significantly enhance both fabrication yield and reliability, since they will not require cesium or other highly reactive materials for activation. This performance will enable a next-generation UV spectroscopic and imaging mission that is of high scientific priority for NASA. This photocathode uses near-surface band-structure engineering to create a permanently activated surface, with high efficiency and air-stable UV response. We will combine this III-nitride structure with our unique III-nitride processing technology to optimize the efficiency and uniformity of the photocathode. In addition, through our design, growth, and processing techniques, we will extend the application of these photocathodes into far UV for both semitransparent and

  7. Growth and characterization of III-nitrides materials system for photonic and electronic devices by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yoo, Dongwon

    A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in the field of semiconductor research in the past ten years. The direct and large bandgap nature, intrinsic high carrier mobility, and the capability of forming heterostructures allow them to dominate photonic and electronic device market such as light emitters, photodiodes, or high-speed/high-power electronic devices. Avalanche photodiodes (APDs) based on group III-Nitrides materials are of interest due to potential capabilities for low dark current densities, high sensitivities and high optical gains in the ultraviolet (UV) spectral region. Wide-bandgap GaN-based APDs are excellent candidates for short-wavelength photodetectors because they have the capability for cut-off wavelengths in the UV spectral region (lambda < 290 nm). These intrinsically solar-blind UV APDs will not require filters to operate in the solar-blind spectral regime of lambda < 290 nm. For the growth of GaN-based heteroepitaxial layers on lattice-mismatched substrates, a high density of defects is usually introduced during the growth; thereby, causing a device failure by premature microplasma, which has been a major issue for GaN-based APDs. The extensive research on epitaxial growth and optimization of AlxGa 1-xN (0 ≤ x ≤ 1) grown on low dislocation density native bulk III-N substrates have brought UV APDs into realization. GaN and AlGaN UV p-i-n APDs demonstrated first and record-high true avalanche gain of > 10,000 and 50, respectively. The large stable optical gains are attributed to the improved crystalline quality of epitaxial layers grown on low dislocation density bulk substrates. GaN p-i-n rectifiers have brought much research interest due to its superior physical properties. The AIN-free full-vertical GaN p-i-n rectifiers on n-type 6H-SiC substrates by employing a conducting AIGaN:Si buffer layer provides the advantages of the reduction of sidewall damage from plasma etching and

  8. Quantum cascade emission in the III-nitride material system designed with effective interface grading

    SciTech Connect

    Song, Alex Y. Huang, Tzu-Yung; Zah, Chung-En; Gmachl, Claire F.; Bhat, Rajaram; Wang, Jie; Allerman, Andrew A.

    2015-09-28

    We report the realization of quantum cascade (QC) light emission in the III-nitride material system, designed with effective interface grading (EIG). EIG induces a continuous transition between wells and barriers in the quantum confinement, which alters the eigenstate system and even delocalizes the states with higher energy. Fully transverse-magnetic spontaneous emission is observed from the fabricated III-nitride QC structure, with a center wavelength of ∼4.9 μm and a full width at half maximum of ∼110 meV, both in excellent agreement with theoretical predictions. A multi-peak photo-response spectrum is also measured from the QC structure, which again agrees well with theoretical calculations and verifies the effects of EIG.

  9. Enhanced non-radiative energy transfer in hybrid III-nitride structures

    SciTech Connect

    Smith, R. M.; Athanasiou, M.; Bai, J.; Liu, B.; Wang, T.

    2015-09-21

    The effect of surface states has been investigated in hybrid organic/inorganic white light emitting structures that employ high efficiency, nearfield non-radiative energy transfer (NRET) coupling. The structures utilize blue emitting InGaN/GaN multiple quantum well (MQW) nanorod arrays to minimize the separation with a yellow emitting F8BT coating. Surface states due to the exposed III-nitride surfaces of the nanostructures are found to reduce the NRET coupling rate. The surface states are passivated by deposition of a silicon nitride layer on the III-nitride nanorod surface leading to reduced surface recombination. A low thickness surface passivation is shown to increase the NRET coupling rate by 4 times compared to an un-passivated hybrid structure. A model is proposed to explain the increased NRET rate for the passivated hybrid structures based on the reduction in surface electron depletion of the passivated InGaN/GaN MQW nanorods surfaces.

  10. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    SciTech Connect

    Leonard, J. T. Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-08-31

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

  11. Acceptor impurity activation in III-nitride light emitting diodes

    SciTech Connect

    Römer, Friedhard Witzigmann, Bernd

    2015-01-12

    In this work, the role of the acceptor doping and the acceptor activation and its impact on the internal quantum efficiency (IQE) of a Gallium Nitride (GaN) based multi-quantum well light emitting diode is studied by microscopic simulation. Acceptor impurities in GaN are subject to a high activation energy which depends on the presence of proximate dopant atoms and the electric field. A combined model for the dopant ionization and activation barrier reduction has been developed and implemented in a semiconductor carrier transport simulator. By model calculations, we demonstrate the impact of the acceptor activation mechanisms on the decay of the IQE at high current densities, which is known as the efficiency droop. A major contributor to the droop is the electron leakage which is largely affected by the acceptor doping.

  12. Selective layer disordering in III-nitrides with a capping layer

    DOEpatents

    Wierer, Jr., Jonathan J.; Allerman, Andrew A.

    2016-06-14

    Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.

  13. Enhanced optical nonlinearities in the near-infrared using III-nitride heterostructures coupled to metamaterials

    SciTech Connect

    Wolf, Omri E-mail: ibrener@sandia.gov; Ma, Xuedan; Brener, Igal E-mail: ibrener@sandia.gov; Allerman, Andrew A.; Wendt, Joel R.; Shaner, Eric A.; Song, Alex Y.

    2015-10-12

    We use planar metamaterial resonators to enhance by more than two orders of magnitude the near infrared second harmonic generation obtained from intersubband transitions in III-Nitride heterostructures. The improvement arises from two factors: employing an asymmetric double quantum well design and aligning the resonators' cross-polarized resonances with the intersubband transition energies. The resulting nonlinear metamaterial operates at wavelengths where single photon detection is available, and represents a different class of sources for quantum photonics related phenomena.

  14. Enhanced optical nonlinearities in the near-infrared using III-nitride heterostructures coupled to metamaterials

    DOE PAGES

    Wolf, Omri; Allerman, Andrew A.; Ma, Xuedan; ...

    2015-10-15

    We use planar metamaterial resonators to enhance, by more than two orders of magnitude, the optical second harmonic generation, in the near infrared, obtained from intersubband transitions in III-Nitride heterostructures. The improvement arises from two factors: employing an asymmetric double quantum well design and aligning the resonators’ cross-polarized resonances with the intersubband transition energies. The resulting nonlinear metamaterial operates at wavelengths where single photon detection is available, and represents a new class of sources for quantum photonics related phenomena.

  15. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Romanov, Alexey E.; Young, Erin C.; Wu, Feng; Tyagi, Anurag; Gallinat, Chad S.; Nakamura, Shuji; DenBaars, Steve P.; Speck, James S.

    2011-05-01

    This article presents a theoretical analysis of dislocation behavior and stress relaxation in semipolar III-nitride heteroepitaxy, e.g., for AlxGa1-xN and InyGa1-yN layers grown on {hh2-h-m}- or {h0h-m}-type semipolar planes of GaN substrates. We demonstrate that the shear stresses on the unique inclined basal (0001) plane do not vanish for such growth geometries. This leads to the onset of relaxation processes in semipolar III-nitride heterostructures via dislocation glide in the basal slip systems <1-1-20>(0001) and to the formation of misfit dislocations (MDs) with Burgers vectors of (a /3)<1-1-20>-type at the semipolar heterointerface. Next we calculate the Matthews-Blakeslee critical thickness for MD formation in semipolar III-nitride layers together with the MD equilibrium spacings for complete misfit relaxation. The component of the MD Burgers vector normal to the film/substrate interface will cause a crystal lattice tilt in the epilayer with respect to the GaN substrate. The calculated magnitudes of the tilt angles are 0.62° and 0.67° for AlxGa1-xN and InyGa1-yN alloys with compositions of x = 0.20 and y = 0.07, respectively, grown in the (112-2) semipolar orientation. The modeling results are discussed in light of recent experimental observations [A. Tyagi et al., Appl Phys. Lett. 95, 251905 (2009); E. Young et al., Appl. Phys. Express 3, 011004 (2010); and F. Wu et al., J. Appl. Phys. 109, 033505 (2011)] of MDs and crystal lattice tilt in semipolar III-nitride heteroepitaxial layers.

  16. Amber light-emitting diode comprising a group III-nitride nanowire active region

    DOEpatents

    Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

    2014-07-22

    A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

  17. III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

    2005-10-01

    Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO3) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000°C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO3, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN /GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO3 modulators on compact optoelectronic/electronic chips.

  18. III-nitride quantum dots for ultra-efficient solid-state lighting

    SciTech Connect

    Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; Tsao, Jeffrey Y.

    2016-05-23

    III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.

  19. III-nitride quantum dots for ultra-efficient solid-state lighting

    DOE PAGES

    Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

    2016-05-23

    III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

  20. Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

    SciTech Connect

    Frentrup, Martin Wernicke, Tim; Stellmach, Joachim; Kneissl, Michael; Hatui, Nirupam; Bhattacharya, Arnab

    2013-12-07

    In group-III-nitride heterostructures with semipolar or nonpolar crystal orientation, anisotropic lattice and thermal mismatch with the buffer or substrate lead to a complex distortion of the unit cells, e.g., by shearing of the lattice. This makes an accurate determination of lattice parameters, composition, and strain state under assumption of the hexagonal symmetry impossible. In this work, we present a procedure to accurately determine the lattice constants, strain state, and composition of semipolar heterostructures using high resolution X-ray diffraction. An analysis of the unit cell distortion shows that four independent lattice parameters are sufficient to describe this distortion. Assuming only small deviations from an ideal hexagonal structure, a linear expression for the interplanar distances d{sub hkl} is derived. It is used to determine the lattice parameters from high resolution X-ray diffraction 2ϑ-ω-scans of multiple on- and off-axis reflections via a weighted least-square fit. The strain and composition of ternary alloys are then evaluated by transforming the elastic parameters (using Hooke's law) from the natural crystal-fixed coordinate system to a layer-based system, given by the in-plane directions and the growth direction. We illustrate our procedure taking an example of (112{sup ¯}2) Al{sub κ}Ga{sub 1−κ}N epilayers with Al-contents over the entire composition range. We separately identify the in-plane and out-of-plane strains and discuss origins for the observed anisotropy.

  1. Novel optical study and application on iii-nitrides

    NASA Astrophysics Data System (ADS)

    Sun, Guan

    GaN and its heterostuctures have been intensively studied for wide applications. For example, InGaN/GaN quantum wells (QWs) have been used as active materials for light emitting diodes (LEDs) and laser diodes (LDs) from blue to green region while GaN/AlGaN QWs have been used for ultraviolet region. Meanwhile, nitrides are also very important materials for power electronic devices since such materials hold various advantage over competing semiconductor materials such as Si, GaAs, etc. Due to the above reasons, we believe GaN and its heterostructures will play crucial role for optics and electronics devices as silicon does for electronics. Thus, it is worthwhile to explore possibility of achieving different kinds of newapplications on GaN. This dissertation is focused on optical study on GaN based materials, including GaN thin film, InGaN/GaN QWs, InGaN dot-in-a-wire nanostructures, GaN/AlN QWs, etc. More specifically, in Chapter 2, we report efficient broadband terahertz (THz) generated in InGaN/GaN heterostructures due to spontaneous dipole radiation utilizing the strong internal field. Considering the normalized power, InGaN/GaN heterostructure is one of the most efficient materials for broadband THz generation. The correlated behavior between THz and photoluminescence (PL) has also been discussed. In Chapter 3, we present the study of PL upconversion from a free standing GaN and the mechanism has been attributed to phonon-assisted anti-Stokes photoluminescence (ASPL) if photon energy of pump laser is in the tail of absorption edge. The potential of laser cooling based on such phenomena has been explored. In Chapter 4, we have present detailed PL studies on different kind of nitrides materials including InGaN/GaN QWs, GaN/AlN QWs, GaN thin film and BN powders. In Chapter 5, we explore the possibility of nonlinear generation on GaN. A GaN/AlGaN multilayer waveguide has been designed to achieve transverse parametric conversion. The objective of this dissertation is

  2. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Brebrick, R. F.; Burger, A.; Dudley, M.; Ramachandran, N.

    2003-01-01

    The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.

  3. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    2003-01-01

    The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. Significant effects of gravity vector orientation on the growth crystal morphology and point defect distribution were observed.

  4. A Stable, Non-Cesiated III-Nitride Photocathode for Ultraviolet Astronomy Application

    NASA Astrophysics Data System (ADS)

    Bell, Lloyd

    In this effort, we propose to develop a new type of cesium-free photocathode using III-nitride (III-N) materials (GaN, AlN, and their alloys) and to achieve highly efficient, solar blind, and stable UV response. Currently, detectors used in UV instruments utilize a photocathode to convert UV photons into electrons that are subsequently detected by microchannel plate or CCD. The performance of these detectors critically depends on the efficiency and stability of their photocathodes. In particular, photocathode instability is responsible for many of the fabrication difficulties commonly experienced with this class of detectors. In recent years, III-N (in particular GaN) photocathodes have been demonstrated with very high QE (>50%) in parts of UV spectral range. Moreover, due to the wide bandgaps of III-nitride materials, photocathode response can be tailored to be intrinsically solar-blind. However, these photocathodes still rely on cesiation for activation, necessitating all-vacuum fabrication and sealed-tube operation. The proposed photocathode structure will achieve activation through methods for band structure engineering such as delta-doping and polarization field engineering. Compared to the current state-of-the-art in flight-ready microchannel plate sealed tubes, photocathodes based on III-N materials will yield high QE and significantly enhance both fabrication yield and reliability, since they do not require cesium or other highly reactive materials for activation. This performance will enable a ~4 meter medium class UV spectroscopic and imaging mission that is of high scientific priority for NASA. This work will build on the success of our previous APRA-funded effort. In that work, we demonstrated III-nitride photocathode operation without the use of cesium and stable response with respect to time. These accomplishments represent major improvements to the state-of-the-art for photocathode technologies. In the proposed effort, we will implement III-nitride

  5. Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Rousseau, Ian; Sánchez Arribas, Irene; Carlin, Jean-François; Butté, Raphaël.; Grandjean, Nicolas

    2016-04-01

    We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near λ = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity and gain is supplied by a single InGaN/GaN quantum well. Using this platform, we and others previously demonstrated single-μW lasing thresholds due to the high βQ-product inherent to the nanobeam geometry (β is spontaneous emission coupling fraction into desired mode). In this work, we improved the fraction of emission emitted into our microscope's light cone by combining a redesigned photonic crystal cavity (c.f. [3]) with a cross-grating coupler with period approximately twice the photonic crystal lattice constant. The samples were fabricated in epitaxial III-nitride layers grown on (111) silicon substrates using metal organic vapor phase epitaxy. The photonic crystal and output couplers were patterned using a single electron beam lithography exposure and subsequently transferred to the underlying III-nitride layers using dry etching. The nanobeams were then suspended via vapor phase etching of silicon in XeF2. Scanning electron microscopy cross-sections revealed high-aspect ratio (>5), sub-70 nanometer diameter holes with near-vertical sidewalls. Fabrication-induced geometry errors were characterized by processing scanning electron micrographs with custom critical dimension software. Using UV micro-photoluminescence spectroscopy at room temperature, we measured the nanobeams' emission intensity, far-field profile, and quality factor. By comparing more than ten nominally identical nanobeams for each geometry with finite-difference time-domain simulations taking into account the geometrical deviations measured during fabrication, we characterized the role of fabrication-induced imperfections. Finally, we explored the trade-off between the quality factor and collected signal via lithographic variations of the output

  6. Bias-enhanced optical pH response of group III-nitride nanowires.

    PubMed

    Wallys, Jens; Teubert, Jörg; Furtmayr, Florian; Hofmann, Detlev M; Eickhoff, Martin

    2012-12-12

    We show that the photoluminescence intensity of GaN and InGaN nanowires in electrolytes sensitively responds to variations of the pH value and the applied bias. The realization of an electrochemical working point allows pH detection with a resolution better than 0.05 pH. The observed effects are attributed to bias-dependent nonradiative recombination processes competing with interband transitions. The results show that group III-nitride nanowires are excellently suited as nanophotonic pH sensor elements.

  7. Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy

    DTIC Science & Technology

    2013-01-01

    not usually detectable by the standard (004) x-ray diffraction (XRD) measurements typically used as a simple measurement of film quality. 15. SUBJECT...as a simple measurement of film quality. 2. Motivation and Army Interest One common example of ordering seen in many semiconductor alloys is copper...this will provide a III-V analog to direct bandgap mercury cadmium telluride (HgCdTe), with the benefits of higher quantum efficiencies (QEs) and

  8. Trialkylphosphine-stabilized copper(I) gallium(III) phenylchalcogenolate complexes: crystal structures and generation of ternary semiconductors by thermolysis.

    PubMed

    Kluge, Oliver; Krautscheid, Harald

    2012-06-18

    A series of organometallic trialkylphosphine-stabilized copper gallium phenylchalcogenolate complexes [(R(3)P)(m)Cu(n)Me(2-x)Ga(EPh)(n+x+1)] (R = Me, Et, (i)Pr, (t)Bu; E = S, Se, Te; x = 0, 1) has been prepared and structurally characterized by X-ray diffraction. From their molecular structures three groups of compounds can be distinguished: ionic compounds, ring systems, and cage structures. All these complexes contain one gallium atom bound to one or two methyl groups, whereas the number of copper atoms, and therefore the nuclearity of the complexes, is variable and depends mainly on size and amount of phosphine ligand used in synthesis. The Ga-E bonds are relatively rigid, in contrast to flexible Cu-E bonds. The lengths of the latter are controlled by the coordination number and steric influences. The Ga-E bond lengths depend systematically on the number of methyl groups bound to the gallium atom, with somewhat shorter bonds in monomethyl compounds compared to dimethyl compounds. Quantum chemical computations reproduce this trend and show furthermore that the rotation of one phenyl group around the Ga-E bond is a low energy process with two distinct minima, corresponding to two different conformations found experimentally. Mixtures of different types of chalcogen atoms on molecular scale are possible, and then ligand exchange reactions in solution lead to mixed site occupation. In thermogravimetric studies the complexes were converted into the ternary semiconductors CuGaE(2). The thermolysis reaction is completed at temperatures between 250 and 400 °C, typically with lower temperatures for the heavier chalcogens. Because of significant release of Me(3)Ga during the thermolysis process, and especially in case of copper excess in the precursor complexes, binary copper chalcogenides are obtained as additional thermolysis products. Quaternary semiconductors can be obtained from mixed chalcogen precursors.

  9. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    PubMed

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  10. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365 nm (3.4 eV, the bulk bandgap) to below 240 nm (>5.2 eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  11. Search for new topological insulators: ternary Li2AgSb-class semiconductors and related compounds

    NASA Astrophysics Data System (ADS)

    Lin, Hsin; Das, Tanmoy; Wang, Y. J.; Wray, L. A.; Xu, S.-Y.; Hasan, M. Z.; Bansil, Arun

    2012-02-01

    Topological insulators host a rare quantum phase of electrons which is characterized by a topological invariant number of bulk states of combined spin-orbit and time-reversal symmetry origin. Despite recent progress the available classes of topological insulators are still quite limited for use in device applications and experimental exploration of exotic topological phenomena. For this reason, the search for new materials with greater structural flexibility and tunability in various local order broken symmetry phases is continuing worldwide with great intensity. Here we discuss our effort based on first-principles calculations to show that the adiabatic continuation method can provide a very powerful tool for predicting non-trivial topological phases with the example of ternary intermetallic series, Li2M'X (M'=Cu, Ag, Au, and Cd, X=Sb, Bi, and Sn) as well as other compounds with zinc-blende type sublattice. [1-3] Work supported by the Office of Basic Energy Sciences, US DOE.[1] H. Lin, et al. Nature Materials 9, 546 (2010). [2] Y. J. Wang, et al. New J. Phys. 13, 085017 (2011). [3] H. Lin, et al., arXiv:1007.5111.

  12. Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1993-01-01

    The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(1-x), ZnTe(x)Se(1-x), and Zn(1-x)Cd(x)Se). These materials are useful for opto-electronic applications such as high efficient light emitting diodes and low power threshold and high temperature lasers in the blue-green region of the visible spectrum. The recent demonstration of its optical bistable properties also makes ZnSe a possible candidate material for digital optical computers. The investigation consists of an extensive ground-based study followed by flight experimentation, and involves both experimental and theoretical work. The objectives of the ground-based work are to establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low gravity environment and to obtain the experimental data and perform the analyses required to define the optimum parameters for the flight experiments. During the six months of the Preliminary Definition Phase, the research efforts were concentrated on the binary compound ZnSe - the purification of starting materials of Se by zone refining, the synthesis of ZnSe starting materials, the heat treatments of the starting materials, the vapor transport rate measurements, the vapor partial pressure measurements of ZnSe, the crystal growth of ZnSe by physical vapor transport, and various characterization on the grown ZnSe crystals.

  13. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    PubMed Central

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, B.; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-01-01

    Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. Since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned. PMID:26670421

  14. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    SciTech Connect

    Malasi, A.; Taz, H.; Farah, A.; Patel, M.; Lawrie, Benjamin; Pooser, R.; Baddorf, A.; Duscher, G.; Kalyanaraman, R.

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergent semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.

  15. Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility

    DOE PAGES

    Malasi, A.; Taz, H.; Farah, A.; ...

    2015-12-16

    We report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 104 S/m) and Hall mobility (>30 cm2/V-s). These films had an amorphous microstructure which was stable to at least 500 °C and large optical transparency with a direct band gap of 2.85 ± 0.14 eV. This material shows emergentmore » semiconducting behavior with significantly higher conductivity and mobility than the constituent insulating oxides. In conclusion, since these results demonstrate a new way to modify the behaviors of transition metal oxides made from unfilled d- and/or f-subshells, a new class of functional transparent conducting oxide materials could be envisioned.« less

  16. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

    NASA Astrophysics Data System (ADS)

    Myzaferi, A.; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P.

    2016-08-01

    The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a ( 20 2 ¯ 1 ) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.

  17. Sources of Shockley-Read-Hall recombination in III-nitride light emitters

    NASA Astrophysics Data System (ADS)

    Dreyer, Cyrus E.; Alkauskas, Audrius; Lyons, John L.; Speck, James S.; van de Walle, Chris G.

    Group-III nitrides are the key materials for high efficiency light-emitting diodes in the blue part of the visible spectrum, and a large research effort is aimed at extending this success to the green and the yellow range, where nitride LEDs are significantly less efficient. Though it has been noted that the efficiency of III-nitride devices may be limited by Shockley-Read-Hall recombination at point defects, the microscopic mechanism and defects responsible are unknown. Based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients, we describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen can act as efficient channels for nonradiative recombination in InGaN alloys. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes, around 1016cm-3, can give rise to Shockley-Read-Hall coefficients A = (107 -109) s-1. The resulting nonradiative recombination can significantly reduce the internal quantum efficiency of optoelectronic devices. This work was supported by DOE and by EU Marie Sklodowska-Curie Action.

  18. III-Nitride nanowire lasers: fabrication and control of optical properties (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Wang, George T.

    2016-09-01

    III-nitride nanowires have attracted increasing interest as potential ultracompact and low-power nanoscale lasers in the UV-visible wavelengths. In order to maximize the potential of nanowire lasers, a greater understanding and control over their properties, including mode control, polarization control, wavelength tuning, and beam shaping, is necessary. Here, we discuss the fabrication of III-nitride based single nanowire and nanowire photonic crystal lasers using a top-down approach, and present multiple methods for controlling their optical properties. The nanowires were fabricated by a two-step process composed of a lithographic dry etch followed by a selective, wet chemical etch of the nanowire sidewalls. This technique allows for high quality nanowires with straight and smooth nonpolar m-plane sidewalls and with controllable height, pitch and diameter. Precisely engineered axial nanowire heterostructures can be formed from planar heterostructures, while radial nanowire heterostructures can be formed via regrowth on the etched nanowires. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  19. Optical and Electrical Properties of III-Nitrides and Related Materials

    SciTech Connect

    Jiang, Hongxing; Lin, Jingyu

    2016-01-22

    Among the members of the III-nitride material system, boron-nitride (BN) is the least studied and understood. Its extraordinary physical properties, such as ultra-high chemical stability, thermal conductivity, electrical resistivity, band gap (Eg ~ 6 eV), and optical absorption near the band gap make hexagonal BN (h-BN) the material of choice for emerging applications such as deep ultraviolet (DUV) optoelectronic devices. Moreover, h-BN has a close lattice match to graphene and is the most suitable substrate and dielectric/separation layer for graphene electronics and optoelectronics. Similar to graphene, low dimensional h-BN is expected to possess rich new physics. Other potential applications include super-capacitors and electron emitters. However, our knowledge concerning the semiconducting properties of h-BN is very scarce. The project aims to extend our studies to the “newest” family member of the III-nitride material system, h-BN, and to address issues that have not yet been explored but are expected to profoundly influence our understanding on its fundamental properties and device applications. During the supporting period, we have improved the growth processes of h-BN epilayers by metal organic chemical vapor deposition (MOCVD), investigated the fundamental material properties, and identified several unique features of h-BN as well as critical issues that remain to be addressed.

  20. Ternary Cd(Se,Te) alloy semiconductors - Synthesis, material characterization, and high-efficiency photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Levy-Clement, C.; Triboulet, R.; Rioux, J.; Etcheberry, A.; Licht, S.

    1985-12-01

    High-quality Cd(Se,Te) in two compositions was synthesized using the modified Bridgman technique. The Se-rich crystals had the hexagonal structure, while the Te-rich phase consisted of crystals with cubic packing. Their quality could be gauged from high-electron mobility and low resistivity, which suited the purpose of their synthesis, i.e., for high-efficiency photoelectrochemical cells. Photoelectrochemical etching was employed, which resulted in a heavily pitted surface with the density of the etch pits exceeding 10 to the 9th/sq cm. Quantum efficiency of the semiconductor/aqueous polysulfide interface increased considerably after photoetching. Solar-to-electrical conversion efficiencies in excess of 12 percent were obtained. Photoluminenscence spectrum was measured for the two crystals prior to and after photoetching. The emission maximum is near the calculated band gap. The decline in the luminescence intensity, after photoetching, is attributed to the corrugation of the surface and the reduced density of the donor state near the semiconductor surface, which increases the thickness of the space-charge layer (dead layer model).

  1. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Brebrick, Robert F.; Volz, Martin P.; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin P.; Shih, Hung-Dah

    2001-01-01

    Crystal growth by vapor transport has several distinct advantages over melt growth techniques. Among various potential benefits from material processing in reduced gravity the followings two are considered to be related to crystal growth by vapor transport: (1) elimination of the crystal weight and its influence on the defect formation and (2) reduction of natural buoyancy-driven convective flows arising from thermally and/ or solutally induced density gradient in fluids. The previous results on vapor crystal growth of semiconductors showed the improvements in surface morphology, crystalline quality, electrical properties and dopant distribution of the crystals grown in reduced gravity as compared to the crystals grown on Earth. But the mechanisms, which are responsible for the improvements and cause the gravitational effects on the complicated and coupled processes of vapor mass transport and growth kinetics, are not well understood.

  2. Half-metallicity and electronic structures for carbon-doped group III-nitrides: Calculated with a modified Becke-Johnson potential

    NASA Astrophysics Data System (ADS)

    Fan, Shuai-wei; Wang, Ri-gao; Xu, Pemg

    2016-09-01

    The electronic structures and magnetism for carbon-doped group III-nitrides are investigated by utilizing the first principle method with the modified Becke-Johnson potential. Calculations show that carbon substituting cations (anions) would induce the group III-nitrides to be paramagnetic metals (half-metallic ferromagnets). Single carbon substituting nitrogen could produce 1.00μB magnetic moment. Electronic structures indicate that the carriers-mediated double-exchange interaction plays a crucial role in forming the ferromagnetism. Based on the mean-field theory, the Curie temperature for carbon-doped group III-nitrides would be above the room temperature. Negative chemical pair interactions imply that carbon dopants tend to form clustering distribution in group III-nitrides. The nitrogen vacancy would make the carbon-doped group III-nitrides lose the half-metallic ferromagnetism.

  3. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Brebrick, R. F.; Dudley, M.; Ramachandran, N.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0

  4. Lattice Dynamical Properties of Group-III Nitrides AN (A = B, Al, Ga and In) in Zinc-Blende Phase

    NASA Astrophysics Data System (ADS)

    Kushwaha, A. K.

    2016-03-01

    In the present paper, we have calculated the phonon dispersion relations, phonon density of states, Debye characteristic temperature and the zone boundary phonons for group-III nitrides AN (A = B, Al, Ga and In) using eleven-parameter three-body shell model with both the ions being polarizable. Our calculated results are in good agreement with experimental results available in the literature.

  5. Selective oxidation of AlInN layers for current confinement in III-nitride devices

    NASA Astrophysics Data System (ADS)

    Dorsaz, J.; Bühlmann, H.-J.; Carlin, J.-F.; Grandjean, N.; Ilegems, M.

    2005-08-01

    Highly selective oxidation of an AlInN interlayer buried in a GaN matrix is demonstrated. This technique was successfully applied to form current apertures in III-nitride light-emitting diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitaxy with a lattice-matched AlInN layer inserted in the n-doped region of the device. Mesas were etched by Cl2/Ar reactive ion etching to give access to the AlInN sidewalls. The sample was then oxidized anodically in a nitrilotriacetic acid solution. Using this technique, the AlInN layer was oxidized laterally up to 22μm deep while the surrounding GaN layers were kept unaffected. It was subsequently demonstrated that the oxidized AlInN layers are insulating and are therefore suitable for lateral current confinement in optoelectronic devices.

  6. III-nitride core–shell nanorod array on quartz substrates

    PubMed Central

    Bae, Si-Young; Min, Jung-Wook; Hwang, Hyeong-Yong; Lekhal, Kaddour; Lee, Ho-Jun; Jho, Young-Dahl; Lee, Dong-Seon; Lee, Yong-Tak; Ikarashi, Nobuyuki; Honda, Yoshio; Amano, Hiroshi

    2017-01-01

    We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates. PMID:28345641

  7. III-nitride nanowires: novel materials for solid-state lighting

    NASA Astrophysics Data System (ADS)

    Wang, George T.; Li, Qiming; Huang, Jianyu; Talin, A. Alec; Armstrong, Andrew; Upadhya, Prashanth C.; Prasankumar, Rohit P.

    2011-03-01

    Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices. However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.

  8. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    PubMed Central

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  9. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials.

    PubMed

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D; Hennessy, John J; Carver, Alexander G; Jones, Todd J; Goodsall, Timothy M; Hamden, Erika T; Suvarna, Puneet; Bulmer, J; Shahedipour-Sandvik, F; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L Douglas

    2016-06-21

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  10. Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

    NASA Astrophysics Data System (ADS)

    Rousseau, Ian; Sánchez-Arribas, Irene; Shojiki, Kanako; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

    2017-03-01

    The mechanisms contributing to experimental quality factors of short wavelength (λ =440 -480 nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and quality factor were compared over sets of nominally identical cavities. Unlike at λ =1.5 μ m , experimental quality factors were not limited by fabrication disorder modeled as smooth, normally distributed hole size and position variations; after ruling out absorption losses, additional scattering losses were found to predominate at short wavelengths. Experimental quality factors were sensitive to conformal deposition of few nanometer thin films on the photonic crystal surface, suggesting that the additional scattering losses were linked to the surface.

  11. III-nitride core-shell nanorod array on quartz substrates.

    PubMed

    Bae, Si-Young; Min, Jung-Wook; Hwang, Hyeong-Yong; Lekhal, Kaddour; Lee, Ho-Jun; Jho, Young-Dahl; Lee, Dong-Seon; Lee, Yong-Tak; Ikarashi, Nobuyuki; Honda, Yoshio; Amano, Hiroshi

    2017-03-27

    We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.

  12. Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

    NASA Astrophysics Data System (ADS)

    Schoeche, Stefan

    The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

  13. Design and Development of Stress Engineering Techniques for III-Nitride Epitaxy on Si

    NASA Astrophysics Data System (ADS)

    Leathersich, Jeff

    III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, prevented its wide-spread commercialization specifically the large lattice mismatch and thermal expansion coefficient mismatch. Both of these issues can be overcome by engineering the stress levels in the films. In this thesis work close examination and exploration of the stress formation and evolution in GaN-on-Si is performed. Methods of improving stress levels are developed in addition to providing a deeper understanding of the stress evolution process. A commonly used methodology of engineering stress levels is to use an AlGaN multi-layer stack. The first layer in the stack is an AlN buffer layer. Typical deposition methods for AlN leaves the surface rough and not ideal for subsequent epitaxy. Here, two specific modifications to the conventional deposition process are made which yield dramatic improvement in material quality and stress levels of an overgrown GaN layer. Full width at half maximum measurements from HRXRD rocking curve of GaN grown on the modified buffers show a 2x reduction and ~0.45 GPa greater built-in compressive stress in the films. A semi-empirical model to predict stress evolution in III-Nitrides is established using both fundamentals and experimental data. The model will allow researchers determine the desired stress levels in the films in advance of Epitaxy. This will

  14. Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates

    SciTech Connect

    Shervin, Shahab; Asadirad, Mojtaba; Kim, Seung-Hwan; Ravipati, Srikanth; Lee, Keon-Hwa; Bulashevich, Kirill; Ryou, Jae-Hyun

    2015-11-09

    This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strain in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation modes and transfer characteristics of HEMTs can be engineered with an optimum external bending strain applied in the device structure, which is expected to be beneficial for both radio frequency and switching applications. In addition, we show that drain currents of transistors based on flexible InAlGaN/GaN can be modulated only by external strain without applying electric field in the gate. The channel conductivity modulation that is obtained by only external strain proposes an extended functional device, gate-free SETs, which can be used in electro-mechanical applications.

  15. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

    SciTech Connect

    Verma, Jai; Simon, John; Protasenko, Vladimir; Kosel, Thomas; Xing, Huili Grace; Jena, Debdeep

    2011-10-24

    Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.

  16. Final LDRD report : the physics of 1D and 2D electron gases in III-nitride heterostructure NWs.

    SciTech Connect

    Armstrong, Andrew M.; Arslan, Ilke; Upadhya, Prashanth C.; Morales, Eugenia T.; Leonard, Francois Leonard; Li, Qiming; Wang, George T.; Talin, Albert Alec; Prasankumar, Rohit P.; Lin, Yong

    2009-09-01

    The proposed work seeks to demonstrate and understand new phenomena in novel, freestanding III-nitride core-shell nanowires, including 1D and 2D electron gas formation and properties, and to investigate the role of surfaces and heterointerfaces on the transport and optical properties of nanowires, using a combined experimental and theoretical approach. Obtaining an understanding of these phenomena will be a critical step that will allow development of novel, ultrafast and ultraefficient nanowire-based electronic and photonic devices.

  17. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    SciTech Connect

    Li, Baikui; Tang, Xi; Chen, Kevin J.; Wang, Jiannong

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

  18. First-Principles Calculations of Structural, Electronic and Optical Properties of Ternary Semiconductor Alloys ZAs x Sb1-x (Z = B, Al, Ga, In)

    NASA Astrophysics Data System (ADS)

    Bounab, S.; Bentabet, A.; Bouhadda, Y.; Belgoumri, Gh.; Fenineche, N.

    2017-03-01

    We have investigated the structural and electronic properties of the BAs x Sb 1-x , AlAs x Sb 1-x , GaAs x Sb 1-x and InAs x Sb 1-x semiconductor alloys using first-principles calculations under the virtual crystal approximation within both the density functional perturbation theory and the pseudopotential approach. In addition the optical properties have been calculated by using empirical methods. The ground state properties such as lattice constants, both bulk modulus and derivative of bulk modulus, energy gap, refractive index and optical dielectric constant have been calculated and discussed. The obtained results are in reasonable agreement with numerous experimental and theoretical data. The compositional dependence of the lattice constant, bulk modulus, energy gap and effective mass of electrons for ternary alloys show deviations from Vegard's law where our results are in agreement with the available data in the literature.

  19. Strain Relaxation in Semipolar III-Nitrides for Light Emitting Diode Applications

    NASA Astrophysics Data System (ADS)

    Koslow, Ingrid Larson

    Light emitting diodes (LEDs) based on the III-nitride material system (Al,In,Ga)N have been utilized in a number of commercial applications, from small Christmas tree lights to high power lightbulbs and streetlamps. Until now, all commercially available GaN-based devices have been based on the conventional c-plane (polar) orientation of the Wurtzite crystal structure, and grown heteroepitaxially on foreign substrates such as sapphire. However, the recent availability of low defect density HVPE-grown GaN substrates have opened up new possibilities to study novel crystal orientations, known as nonpolar and semipolar. The (Al,In,Ga)N material system has bandgaps ranging from 0.7 eV in the infrared out to 6.3 eV in the deep UV---and LEDs with wavelengths from roughly 365 nm (near-UV) to 550 nm (green) are commercially available. However, although blue LEDs typically have an external quantum efficiency (EQE) > 60%, at emission wavelengths beyond 500 nm the EQE drops to ≤ 30%. Similarly, although red-emitting LEDs based on AlInGaP have high efficiency, their EQE is also reduced for yellow wavelengths. This phenomenon is known as the 'Green Gap'. Although there are likely to be numerous factors responsible for this reduction in efficiency with emission wavelength in III-nitrides, a leading candidate is mismatch strain between the active region of the LED---consisting of thin layers of InGaN with at least 30% indium---and the GaN substrate, which have a significant lattice constant mismatch of > 3%. In order to improve the efficiency of green-emitting LEDs, strain relaxation mechanisms on semipolar orientations have been studied. By growing relaxed InGaN buffer layers, it is possible to change the lattice constant from that of the GaN substrates, reducing the mismatch strain in the active region itself. Multiple slip systems have been observed and studied in semipolar nitrides, leading to several sets of misfit dislocations (MDs) that result in relaxation of InGaN layers

  20. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

    NASA Astrophysics Data System (ADS)

    Rychetsky, Monir; Koslow, Ingrid; Avinc, Baran; Rass, Jens; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca; Hoffmann, Veit; Weyers, Markus; Wild, Johannes; Zweck, Josef; Witzigmann, Bernd; Kneissl, Michael

    2016-03-01

    The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (-0.50 ± 0.07) MV/cm for In0.08Ga0.92N/GaN, (0.90 ± 0.13) MV/cm for Al0.18Ga0.82N/GaN, and (2.0 ± 0.3) MV/cm for Al0.31Ga0.69N/GaN heterostructures.

  1. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    DOEpatents

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  2. Neurotypic cell attachment and growth on III-nitride lateral polarity structures.

    PubMed

    Bain, L E; Kirste, R; Johnson, C A; Ghashghaei, H T; Collazo, R; Ivanisevic, A

    2016-01-01

    III-nitride materials have recently received increasing levels of attention for their potential to successfully interface with, and sense biochemical interactions in biological systems. Expanding on available sensing schemes (including transistor-based devices,) a III-N lateral polarity structure capable of introducing quasi-phase matching through a periodic polarity grating presents a novel platform for second harmonic generation. This platform constitutes a non-linear optical phenomenon with exquisite sensitivity to the chemical state of a surface or interface. To characterize the response of a biological system to the nanostructured lateral polarity structures, we cultured neurotypic PC12 cells on AlGaN with varying ratios of Al:Ga - 0, 0.4, 0.6, and 1 - and on surfaces of varying pitch to the III-polar vs. N-polar grating - 5, 10, 20 and 50 μm. While some toxicity associated with increasing Al is observed, we documented and quantified trends in cell responses to the local material polarity and nanoscale roughness. The nitrogen-polar material has a significantly higher nanoscale roughness than III-polar regions, and a 80-200 nm step height difference between the III-polar and N-polar materials in the lateral polarity configuration generates adequate changes in topography to influence cell growth, improves cell adhesion and promotes cell migration along the direction of the features. As the designed material configuration is further explored for biochemical sensing, the lateral polarity scheme may provide a route in assessing the non-specific protein adsorption to this varying nano-topography that drives the subsequent cell response.

  3. High-Power, Low-Droop III-Nitrides Based Blue Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Pan, Chih-Chien

    III-Nitrides based light-emitting diodes (LED) have greatly attracted considerable attention due to their use in a range of applications for illumination and are often operated at high drive currents to achieve high emission powers. In order to have enough emission optical powers, LEDs with high internal quantum efficiency (IQE) and light extraction efficiency (LEE) as well as external quantum efficiency (EQE) are required. In this work, first, we explored the optical and material properties of GaN-based polar and semipolar blue LEDs grown on c-plane patterned sapphire substrate (PSS) and free-standing GaN (FS-GaN) substrate, respectively. By analyzing these properties, we were be able to achieve high IQE, LEE, and EQE values using novel designs of the epi structure and LED package. At UCSB, by using a novel vertical transparent ZnO-stand LED (VT-LED) package to reduce the loss of photons in the absorptive materials (p-type GaN, indium-tin oxide, and silver header, etc.), high LEE of 76 and 75% can be achieved for GaN-based LEDs grown on PSS and FS-GaN substrate, respectively. In this study, we also find a close agreement between simulating and experimental results. On the other hand, in order to achieve high IQE and EQE for blue LEDs at high current densities (> 100 A/cm2), low-carrier-density structure design is the key to address efficiency droop (J-droop) and thermal droop (T-droop), in which IQE decreases with increasing the injection current and temperature. A compositionally step-graded (CSG) InGaN quantum barrier (QB) and a single 12-nm-thick quantum well (SQW) structure have been applied in polar (0001) and semipolar (2021) blue LEDs, respectively, to mitigate Shockley-Read-Hall (SRH) and Auger recombination, and carrier leakage by lowering the carrier density in the active region of the LED. As a consequence, high EQE of ˜ 46 and 50% and low thermal droop ratios of ˜ 16 and 10% (when the temperature is elevated from 20 to 100°C) can be achieved for

  4. Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices

    NASA Astrophysics Data System (ADS)

    Chakraborty, Arpan

    measured. In summary, the result of the experiments described in this thesis reveals the potential of nonpolar and semipolar Group-III nitrides based devices, which are free of polarization-induced electric fields.

  5. Red-emitting III-nitride self-assembled quantum dot lasers

    NASA Astrophysics Data System (ADS)

    Frost, Thomas A.

    Visible and ultra-violet light sources have numerous applications in the fields of solid state lighting, optical data storage, plastic fiber communications, heads-up displays in automobiles, and in quantum cryptography and communications. Most research and development into such sources is being done using III-nitride materials where the emission can be tuned from the deep UV in AlN to the near infrared in InN. However due to material limitations including large strain, piezoelectric polarization, and the unavailability of cheap native substrates, most visible devices are restricted to emission near GaN at 365nm up to around 530nm. These dots are formed by the relaxation of strain, and it has been shown both theoretically and experimentally that the piezoelectric field and the resultant quantum confined stark effect are significantly lower than those values reported in comparable QWs. As a result, the radiative carrier lifetimes in such dots are typically around 10-100 times smaller than those in equivalent QWs. Furthermore, the quasi-three dimensional confinement of carriers in the InGaN islands that form the dots can reduce carrier migration to (and therefore recombination at) dislocations and other defects. In the present study, molecular beam epitaxial growth and the properties of InGaN/GaN self-assembled quantum dots have been investigated in detail. The quantum dots, emitting at 630nm, have been studied optically through temperature-dependent, excitation-dependent, and time-resolved photoluminescence. A radiative lifetime of ˜2ns has been measured in these samples. Samples with varying number of dot layers were grown and characterized structurally by atomic force microscopy. The growth conditions of the dots have been optimized including the InGaN and GaN thickness and the nitrogen interruption time. The optimized dots have been incorporated into edge-emitting laser heterostructures. Other optimizations including the novel use of an all In0.18Al0.82N cladding

  6. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport in Low Gravity

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Ramachandran, N.

    2013-01-01

    Crystals of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, will be grown by physical vapor transport in the Material Science Research Rack (MSRR) on International Space Station (ISS). The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  7. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Eizenberg, Moshe; Ritter, Dan

    2016-09-01

    We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

  8. Role of interface roughness scattering, temperature, and structural parameters on the performance characteristics of III-nitride quantum cascade detectors

    NASA Astrophysics Data System (ADS)

    Saha, S.; Kumar, J.

    2017-02-01

    A III-nitride quantum cascade detector (QCD) for the fiber optic communication wavelength (˜1.5 μm) has been designed, and the effect of intersubband scattering processes such as longitudinal-optical phonon scattering, ionized impurity scattering, and more importantly interface roughness scattering on responsivity performance has been analyzed. Carrier transport in the detector is modeled using a simplified rate equation approach. It is observed that inclusion of interface roughness scattering in the carrier transport model significantly enhances the responsivity performance of the detector. The effects of roughness conditions for instance mean roughness height and correlation length on responsivity have been examined. The responsivity of the designed detector drops by 2.16 mA/W at 400 K compared to its low temperature value at 50 K and the detection wavelength change with temperature is insignificant, which are very helpful for the stable detection of the radiation for a wide range of operating temperatures and show the thermal stability of III-nitride QCDs. The effects of active well widths, extractor barrier widths, and extractor well widths have been further investigated. A higher responsivity performance is observed for narrower barrier widths. It is noticed that change in the active well width significantly modifies the responsivity of the detector and the wavelength gets red shifted for larger active well widths.

  9. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    PubMed

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  10. Preparation and characterization of Cu2SnS3 ternary semiconductor nanostructures via the spray pyrolysis technique for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Adelifard, Mehdi; Bagheri Mohagheghi, Mohamad Mehdi; Eshghi, Hosein

    2012-03-01

    Thin films of Cu2SnS3 have been deposited by the spray pyrolysis technique. Various Sn/Cu molar ratios (from 0.0 to 1.0) were applied, which allowed the study of the copper tin sulfide phase. Structural, morphological and compositional analyses have been carried out using x-ray diffraction, field emission scanning electron microscopy and energy dispersive spectroscopy. The pure CuS thin film showed the covellite phase with hexagonal crystal structure, and with increasing the Sn/Cu molar ratio, the films grown were crystallized with triclinic Cu2SnS3 ternary phase. Optical measurement analysis showed that the deposited layers have a relatively high absorption coefficient (~105 cm-1) in the visible spectrum, about one order of magnitude higher than in other published reports. Also these layers presented a reduction of about 1 eV in the values of band gap from 2.57 to 1.58 eV with an increment in the Sn/Cu molar ratio from 0.0 to 1.0. The electrical properties studies showed that all these samples are p-type semiconductors and the resistivity decreases with increasing the Sn/Cu molar ratio.

  11. Implementation of Strategies to Improve the Reliability of III-Nitride Photodetectors towards the Realization of Visible and Solar-Blind Imaging Arrays

    NASA Astrophysics Data System (ADS)

    Bulmer, John J.

    Ultraviolet (UV) radiation detectors are being heavily researched for applications in non-line-of-sight (NLOS) communication systems, flame monitoring, biological detection, and astronomical studies. These applications are currently being met by the use of Si-based photomultiplier tubes (PMTs), which are bulky, fragile, expensive and require the use of external filters to achieve true visible-blind and solar-blind operation. GaN and AlxGa1-xN avalanche photodiodes have been of great interest as a replacement for PMT technology. III-Nitride materials are radiation hard and have a wide, tunable bandgap that allows devices to operate in both visible and solar-blind regimes without the use of external filters. The high price and relative unavailability of bulk substrates demands heteroepitaxy of III-Nitride films on lattice-mismatched substrates, which leads to large dark current and premature breakdown in GaN and AlGaN avalanche photodiodes. While significant advances have been made towards the development of III-Nitride UV photodetectors using a variety of device designs, GaN-based avalanche photodiodes typically demonstrate poor device performance, low yield, and breakdown that results in permanent device damage. To address these challenges, a novel implantation technique was used to achieve edge termination and electric field redistribution at the contact edges in GaN and AlGaN p-i-n photodiode structures to enhance reliability. This process was successful at significantly reducing the levels of dark current over two orders of magnitude and resulted in improved device reliability. Further improvement in reliability of III-Nitride devices was also proposed and explored by a technique for isolation of electrically conductive structural defects. The large number of dislocations induced by the lattice and thermal mismatch with the substrate are known to be leakage current pathways and non-radiative recombination centers in III-Nitride films. This process selectively

  12. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    NASA Astrophysics Data System (ADS)

    Hazari, Arnab; Aiello, Anthony; Ng, Tien-Khee; Ooi, Boon S.; Bhattacharya, Pallab

    2015-11-01

    III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ˜3 × 1010 cm-2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10-17 cm2, respectively. The peak emission is observed at ˜1.2 μm.

  13. Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective

    SciTech Connect

    Bertazzi, Francesco Goano, Michele; Zhou, Xiangyu; Calciati, Marco; Ghione, Giovanni; Matsubara, Masahiko; Bellotti, Enrico

    2015-02-09

    Recent experiments of electron emission spectroscopy (EES) on III-nitride light-emitting diodes (LEDs) have shown a correlation between droop onset and hot electron emission at the cesiated surface of the LED p-cap. The observed hot electrons have been interpreted as a direct signature of Auger recombination in the LED active region, as highly energetic Auger-excited electrons would be collected in long-lived satellite valleys of the conduction band so that they would not decay on their journey to the surface across the highly doped p-contact layer. We discuss this interpretation by using a full-band Monte Carlo model based on first-principles electronic structure and lattice dynamics calculations. The results of our analysis suggest that Auger-excited electrons cannot be unambiguously detected in the LED structures used in the EES experiments. Additional experimental and simulative work are necessary to unravel the complex physics of GaN cesiated surfaces.

  14. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    SciTech Connect

    Leonard, J. T. Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S.; Lee, S.; DenBaars, S. P.; Nakamura, S.

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  15. Efficient visible-light photocatalytic activity by band alignment in mesoporous ternary polyoxometalate-Ag2S-CdS semiconductors

    NASA Astrophysics Data System (ADS)

    Kornarakis, I.; Lykakis, I. N.; Vordos, N.; Armatas, G. S.

    2014-07-01

    Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster anions with different reduction potentials, such as PW12O403-, SiW12O404- and PMo12O403-, were employed as electron acceptors in these ternary heterojunction photocatalysts. Characterization by small-angle X-ray scattering, X-ray diffraction, transmission electron microscopy and N2 physisorption measurements showed hexagonal arrays of POM-Ag2S-CdS hybrid nanorods with large internal BET surface areas and uniform mesopores. The Keggin structure of the incorporated POM clusters was also verified by elemental X-ray spectroscopy microanalysis, infrared and diffuse-reflectance ultraviolet-visible spectroscopy. These new porous materials were implemented as visible-light-driven photocatalysts, displaying exceptional high activity in aerobic oxidation of various para-substituted benzyl alcohols to the corresponding carbonyl compounds. Our experiments show that the spatial separation of photogenerated electrons and holes at CdS through the potential gradient along the CdS-Ag2S-POM interfaces is responsible for the increased photocatalytic activity.Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster

  16. Ternary semiconductors NiZrSn and CoZrBi with half-Heusler structure: A first-principles study

    NASA Astrophysics Data System (ADS)

    Fiedler, Gregor; Kratzer, Peter

    2016-08-01

    The ternary semiconductors NiZrSn and CoZrBi with C 1b crystal structure are introduced by calculating their basic structural, electronic, and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (Eg=0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a band gap of 1.01 eV in PBE (1.34 eV in HSE06). Moreover, effective masses and deformation potentials are reported. In both materials A B C , the intrinsic point defects introduced by species A (Ni or Co) are calculated. The Co-induced defects in CoZrBi are found to have a higher formation energy compared to Ni-induced defects in NiZrSn. The interstitial Ni atom (Nii) as well as the VNiNii complex introduce defect states in the band gap, whereas the Ni vacancy (VNi) only reduces the size of the band gap. While Nii is electrically active and may act as a donor, the other two types of defects may compensate extrinsic doping. In CoZrBi, only the VCoCoi complex introduces a defect state in the band gap. Motivated by the reported use of NiZrSn for thermoelectric applications, the Seebeck coefficient of both materials, both in the p -type and the n -type regimes, is calculated. We find that CoZrBi displays a rather large thermopower of up to 500 μ V /K when p doped, whereas NiZrSn possesses its maximum thermopower in the n -type regime. The reported difficulties in achieving p -type doping in NiZrSn could be rationalized by the unintended formation of Nii2 + in conjunction with extrinsic acceptors, resulting in their compensation. Moreover, it is found that all types of defects considered, when present in concentrations as large as 3%, tend to reduce the thermopower compared to ideal bulk crystals at T =600 K. For NiZrSn, the calculated thermodynamic data suggest that additional Ni impurities could be removed by annealing, leading to precipitation of a metallic Ni2ZrSn phase.

  17. Thermoelectric Effects on the Boundary of Solid and Liquid Phases of Ternary Semiconductors and Alloys of the A-12B-IVC-V13 Type,

    DTIC Science & Technology

    THERMOELECTRICITY, *SEMICONDUCTORS), (* SEEBECK EFFECT , SEMICONDUCTORS), LIQUIDS, PHASE STUDIES, COPPER COMPOUNDS, GERMANIUM COMPOUNDS, TELLURIDES, SELENIDES, TIN COMPOUNDS, SILVER COMPOUNDS, THERMAL CONDUCTIVITY, USSR

  18. Strong coupling in non-polar GaN/AlGaN microcavities with air-gap/III-nitride distributed Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tao, Renchun; Arita, Munetaka; Kako, Satoshi; Kamide, Kenji; Arakawa, Yasuhiko

    2015-09-01

    Strong coupling between excitons and photons is experimentally demonstrated in m-plane GaN/AlGaN microcavities (MCs) with air/AlGaN distributed Bragg reflectors (DBRs) at room temperature. Strong coupling is confirmed by momentum space spectroscopy, and a Rabi splitting (Ω) of 84 meV is estimated. A Rabi splitting of 84 meV is the largest value reported in a III-nitride DBR MC to date and is mainly attributed to the shortened effective cavity length resulting from the high index contrast in the air-gap DBRs used here. These results show that III-nitride air-gap DBR MCs have a high potential for realizing high Ω / κ systems (where κ is the cavity loss).

  19. Mixed ternary heterojunction solar cell

    DOEpatents

    Chen, Wen S.; Stewart, John M.

    1992-08-25

    A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI.sub.2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe.sub.2 or CuIn(SSe).sub.2.

  20. Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Shakya, J.; Lin, J. Y.; Jiang, H. X.

    2004-09-01

    Transient responses of III-nitride photonic-crystal (PC) ultraviolet (UV) light-emitting diodes (LEDs) were measured by picosecond time-resolved electroluminescence (EL) spectroscopy. Triangular arrays of PCs with different diameters/periodicities were fabricated on 333nmUV LEDs for enhancing light extraction efficiency using electron-beam lithography and inductively coupled-plasma dry etching. With the incorporation of PCs on LEDs, the EL decay time constant τ decreases systematically with the increase of the etched sidewall area indicating the strong effect of the surface recombination. The surface recombination velocities on the p-type epitaxial surface and on the sidewall of etched holes on LEDs were determined to be 1.73×104cm /s and 1.48×105cm/s, respectively. The angular distribution of light emission from LEDs with PCs shows slight narrowing in far-field pattern. Because of the increased transient response along with enhanced light extraction, the incorporation of PCs in UV LEDs provide an effective method to control the modulation speed of UV LEDs, which could be very useful for many applications.

  1. Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

    NASA Astrophysics Data System (ADS)

    Corfdir, P.; Levrat, J.; Rossbach, G.; Butté, R.; Feltin, E.; Carlin, J.-F.; Christmann, G.; Lefebvre, P.; Ganière, J.-D.; Grandjean, N.; Deveaud-Plédran, B.

    2012-06-01

    We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. First, the biexciton dynamics is investigated for the bare active medium (multiple quantum wells alone) evidencing localization on potential fluctuations due to alloy disorder and thermalization between both localized and free excitonic and biexcitonic populations. Then, the role of biexcitons is considered for the full microcavity: in particular, we observe that for specific detunings the bottom of the lower polariton branch is directly fed by the radiative dissociation of either cavity biexcitons or excitons mediated by one LO-phonon. Accordingly, minimum polariton lasing thresholds are observed, when the bottom of the lower polariton branch corresponds in energy to the exciton or cavity biexciton first LO-phonon replica. This singular observation highlights the role of excitonic molecules in the polariton condensate formation process as being a more efficient relaxation channel when compared to the usually assumed acoustical phonon emission one.

  2. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    SciTech Connect

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab; Ng, Tien-Khee; Ooi, Boon S.

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  3. Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si

    NASA Astrophysics Data System (ADS)

    Ohachi, Tadashi; Yamabe, Nobuhiko; Yamamoto, Yuka; Wada, Motoi; Ariyada, Osamu

    2011-03-01

    A new spiral parallel mesh electrode (PME) is presented to control active nitrogen species in plasma-assisted molecular beam epitaxial (PA-MBE) growth of group III nitrides and their alloys. Direct flux of active nitrogen from radio frequency inductive coupled plasma (rf-ICP) discharge was able to be measured using a mesh electrode for filtering charge particles and electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode. In situ measurement of direct nitrogen atom fluxes using the spiral PME during PA-MBE growth of GaN and AlN on Si substrates is investigated. A linear rf power dependence of direct flux of active species on atoms such as nitrogen (N+N*), where N and N* were ground and excited atoms, respectively, from a rf-ICP was confirmed by the spiral PME. An indirect flux of nitrogen adsorbed (ADS) atoms (N+N*) during discharge was also monitored by the spiral PME and received influence of the wall surface of the growth chamber. ADS nitrogen atoms are able to be used for nitridation of Si surface to grow a double buffer layer (DBL) AlN/β-Si3N4/Si.

  4. Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Mikulics, M.; Arango, Y. C.; Winden, A.; Adam, R.; Hardtdegen, A.; Grützmacher, D.; Plinski, E.; Gregušová, D.; Novák, J.; Kordoš, P.; Moonshiram, A.; Marso, M.; Sofer, Z.; Lüth, H.; Hardtdegen, H.

    2016-02-01

    We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven InGaN/GaN nano-LEDs as the primary excitation source. To this end, a universal hybrid optoelectronic platform was developed for a large range of optically active nano- and mesoscopic structures. The advantage of the approach is that the emission of the nanocrystals can be electrically induced without the need of contacting them. The proof of principal was demonstrated for the electro-optical pumping of CdSe nanocrystals. The nano-LEDs with a diameter of 100 nm exhibit a very low current of ˜8 nA at 5 V bias which is several orders of magnitude smaller than for those conventionally used. The leakage currents in the device layout were typically in the range of 8 pA to 20 pA/cm2 at 5 V bias. The photon-photon down conversion efficiency was determined to be 27%. Microphotoluminescence and microelectroluminescence characterization demonstrate the potential for future optoelectronics and highly secure "green" information technology applications.

  5. Time Resolved Spectroscopy of Ternary Semiconductors GALLIUM(X)-INDIUM(1-X) Phosphide and GALLIUM-ARSENIDE(1 - Under Picosecond Laser Pulse Excitation.

    NASA Astrophysics Data System (ADS)

    Zarrabi, Hassan J.

    In the thesis, the ultrafast physics of carriers in two ternary semiconductors GA(,x)In(,1-x)P and GaAs(,1 -x)P(,x) were studied under picosecond Laser Pulse Excitation. The dynamics of hot carriers In Ga(,.5)In(,.5)P, were studied by means of time resolved spectroscopy. The effect of high pump intensity on the temporal behavior of the emission at different wavelengths were investigated. At high excitation power fluence, the temporal profile at short wavelengths (high energy portion of the photoluminescence spectra) were exponential similar to the low excitation power fluence. However the temporal profiles at long wavelengths (low energy portion of the photoluminescence spectra close to band edge) exhibited an unusual and complex profile. The time resolved profiles at long wavelength acquired a district tail as excitation power increased even to the point of developing a second peak. A model is proposed to explain the temporal behavior of the emission at different wavelengths. The rate equations describing the time dependence of dynamical variables (n(,e), T(,c), (phi)((nu))) were solved numerically by computer to simulate the temporal behavior of the emission at different wavelengths under different excitation power fluence. The time resolved photoluminescence spectra in Ga(,.56)In(,.44)P was measured with 10 ps time resolution using the streak camera as a detection system. From the theoretical fitting of the photoluminescence spectra we have determined the time evolution of carrier density and carrier temperature. We found that the carrier energy loss rate to be slower than predicted from a simple model assuming a Maxwell Boltzmann distribution function. This is attributed to the screening of the hot carrier energy relaxation under high carrier densities. Integro-differential equations describing the time dependence of carrier temperature have been solved and the results are compared with the experimental data. The time resolved photoluminescence kinetics in Ga

  6. On the origin of interface states at oxide/III-nitride heterojunction interfaces

    NASA Astrophysics Data System (ADS)

    Matys, M.; Adamowicz, B.; Domanowska, A.; Michalewicz, A.; Stoklas, R.; Akazawa, M.; Yatabe, Z.; Hashizume, T.

    2016-12-01

    The energy spectrum of interface state density, Dit(E), was determined at oxide/III-N heterojunction interfaces in the entire band gap, using two complementary photo-electric methods: (i) photo-assisted capacitance-voltage technique for the states distributed near the midgap and the conduction band (CB) and (ii) light intensity dependent photo-capacitance method for the states close to the valence band (VB). In addition, the Auger electron spectroscopy profiling was applied for the characterization of chemical composition of the interface region with the emphasis on carbon impurities, which can be responsible for the interface state creation. The studies were performed for the AlGaN/GaN metal-insulator-semiconductor heterostructures (MISH) with Al2O3 and SiO2 dielectric films and AlxGa1-x layers with x varying from 0.15 to 0.4 as well as for an Al2O3/InAlN/GaN MISH structure. For all structures, it was found that: (i) Dit(E) is an U-shaped continuum increasing from the midgap towards the CB and VB edges and (ii) interface states near the VB exhibit donor-like character. Furthermore, Dit(E) for SiO2/AlxGa1-x/GaN structures increased with rising x. It was also revealed that carbon impurities are not present in the oxide/III-N interface region, which indicates that probably the interface states are not related to carbon, as previously reported. Finally, it was proven that the obtained Dit(E) spectrum can be well fitted using a formula predicted by the disorder induced gap state model. This is an indication that the interface states at oxide/III-N interfaces can originate from the structural disorder of the interfacial region. Furthermore, at the oxide/barrier interface we revealed the presence of the positive fixed charge (QF) which is not related to Dit(E) and which almost compensates the negative polarization charge ( Qp o l - ).

  7. Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Billingsley, Daniel D.

    Although commercially available high-electron mobility transistors (HEMTs) based on the III-Nitride material system are available, there still remains areas for further optimization. These transistor devices are currently limited because of current leakage when the devices are operated at increased operating voltages. To reach the full potential of these devices, these leakage mechanisms need to be addressed. The objective of this work is to utilize the highly resistive properties of carbon-doped gallium nitride (GaN) as a low-leakage buffer layer for HEMTs. By increasing the resistivity of the underlying GaN layer, the source-drain current flow will be limited to electrons in the two-dimensional electron gas (2DEG) confined to the interface, reducing leakage paths through the GaN buffer layer, ultimately increasing the power density of the device. These films are deposited via a novel ammonia-based metal-organic molecular beam epitaxy (NH3-MOMBE) system capable of producing unintentionally carbon-doped GaN films with carbon concentrations ([C]) in excess of 10 21 atoms/cm3. These high levels of carbon incorporation lead to highly-resistive GaN buffer layers with a resistivity estimated at ˜10 12 O-cm. In addition, the deposition of aluminum gallium nitride (AlGaN) has been accomplished for the first time in an NH3-MOMBE environment. The AlGaN alloy is necessary for the production of a 2DEG, which is the source of electrons for the operation of the transistor. While providing the ability to produce highly-resistive buffer layers, the carbon which is unintentionally incorporated during the deposition of the films may also become a source of channel depletion if the incorporation levels cannot be controlled. The results of this work demonstrate that carbon-doped NH3-MOMBE thin films are extremely resistive, yet further optimization is necessary for the realization of transistor devices because of the trap states that are produced from the excessive carbon

  8. Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures.

    PubMed

    Sang, Liwen; Hu, Junqing; Zou, Rujia; Koide, Yasuo; Liao, Meiyong

    2013-01-01

    The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors.

  9. Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures

    PubMed Central

    Sang, Liwen; Hu, Junqing; Zou, Rujia; Koide, Yasuo; Liao, Meiyong

    2013-01-01

    The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors. PMID:23917790

  10. A ternary photocatalyst of graphitic carbon nitride/cadmium sulfide/titania based on the electrostatic assembly using two-dimensional semiconductor nanosheets.

    PubMed

    Zhou, Chenjuan; Qian, Jiajia; Yan, Jing; Dong, Xiaoping; Zhou, Baocheng

    2017-04-01

    Herein, we employed the exfoliated two-dimensional (2D) graphitic carbon nitride nanosheets (CNNS) and titania nanosheets (TNS) as building blocks, and these negatively charged nanosheets were flocculated by Cd(2+) ions with a followed sulfidation treatment to produce a ternary heterostructure photocatalyst of CNNS/CdS/TNS. This novel nanocomposite exhibited outstanding absorption in visible spectral region, and meanwhile its gradient band structure and the closed interface promoted the separation of photo-generated charge. The relative content of CNNS and TNS in the ternary nanocomposite was optimized, and the optimal photocatalyst with a CNNS/TNS mass ratio of 98:2 could rapidly remove 10mgL(-1) rhodamine B (RhB) in 20min under visible light irradiation. The calculated rate constant of CNNS/CdS/TNS was 56.87, 12.18, and 6.67 times higher than those of the restacked CNNS and TNS and the individual CdS, as well as 8.31, 6.22 and 2.57 times higher than those of binary CNNS/TNS, CdS/TNS and CdS/CNNS photocatalysts, respectively. Moreover, this nanocomposite possessed a superior durability and universality for degradation of RhB in different concentration and other organic pollutants, including dyes and colorless compounds. Finally, the possible photocatalytic mechanism was proposed based on the theoretical calculation and the active species quenching experiment.

  11. Relaxation Models of the (110) Zinc-Blende III-V Semiconductor Surfaces: Density Functional Study

    SciTech Connect

    Ye, H.; Chen, G.; Wu, Y.; Zhu, Y.; Wei, S. H.

    2008-11-01

    Clean III-V zinc-blende (110) surfaces are the most extensively studied semiconductor surface. For conventional III-V compounds such as GaAs and InP, the surface relaxation follows a bond rotation relaxation model. However, for III-nitrides recent study indicates that they follow a bond-constricting relaxation model. First-principles atom relaxation calculations are performed to explore the origin of the difference between the two groups of materials. By analyzing the individual shift trends and ionic properties of the top layer anions and cations, we attribute the difference between the conventional and nitride III-V compounds to the strong electronegativity of N, which leads to the s{sup 2}p{sup 3} pyramid bond angle to be larger than the ideal one in bulk (109.5{sup o}). The general trends of the atomic relaxation at the III-nitrides (110) surfaces are explained.

  12. The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting

    SciTech Connect

    Wierer, Jonathan; Tsao, Jeffrey Y.

    2014-09-01

    III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for both LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.

  13. The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting

    DOE PAGES

    Wierer, Jonathan; Tsao, Jeffrey Y.

    2014-09-01

    III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for bothmore » LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.« less

  14. An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides.

    PubMed

    Ju, Guangxu; Highland, Matthew J; Yanguas-Gil, Angel; Thompson, Carol; Eastman, Jeffrey A; Zhou, Hua; Brennan, Sean M; Stephenson, G Brian; Fuoss, Paul H

    2017-03-01

    We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

  15. An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

    NASA Astrophysics Data System (ADS)

    Ju, Guangxu; Highland, Matthew J.; Yanguas-Gil, Angel; Thompson, Carol; Eastman, Jeffrey A.; Zhou, Hua; Brennan, Sean M.; Stephenson, G. Brian; Fuoss, Paul H.

    2017-03-01

    We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

  16. Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells.

    PubMed

    Kowsz, Stacy J; Young, Erin C; Yonkee, Benjamin P; Pynn, Christopher D; Farrell, Robert M; Speck, James S; DenBaars, Steven P; Nakamura, Shuji

    2017-02-20

    We report a device that monolithically integrates optically pumped (20-21) III-nitride quantum wells (QWs) with 560 nm emission on top of electrically injected QWs with 450 nm emission. The higher temperature growth of the blue light-emitting diode (LED) was performed first, which prevented thermal damage to the higher indium content InGaN of the optically pumped QWs. A tunnel junction (TJ) was incorporated between the optically pumped and electrically injected QWs; this TJ enabled current spreading in the buried LED. Metalorganic chemical vapor deposition enabled the growth of InGaN QWs with high radiative efficiency, while molecular beam epitaxy was leveraged to achieve activated buried p-type GaN and the TJ. This initial device exhibited dichromatic optically polarized emission with a polarization ratio of 0.28. Future improvements in spectral distribution should enable phosphor-free polarized white light emission.

  17. The first quaternary lanthanide(III) nitride iodides: NaM{sub 4}N{sub 2}I{sub 7} (M=La-Nd)

    SciTech Connect

    Schurz, Christian M.; Schleid, Thomas

    2010-10-15

    In attempts to synthesize lanthanide(III) nitride iodides with the formula M{sub 2}NI{sub 3} (M=La-Nd), moisture-sensitive single crystals of the first quaternary sodium lanthanide(III) nitride iodides NaM{sub 4}N{sub 2}I{sub 7} (orthorhombic, Pna2{sub 1}; Z=4; a=1391-1401, b=1086-1094, c=1186-1211 pm) could be obtained. The dominating structural features are {sup 1}{sub {infinity}}{l_brace}[NM{sub 4/2}{sup e}]{sup 3+}{r_brace} chains of trans-edge linked [NM{sub 4}]{sup 9+} tetrahedra, which run parallel to the polar 2{sub 1}-axis [001]. Between the chains, direct bonding via special iodide anions generates cages, in which isolated [NaI{sub 6}]{sup 5-} octahedra are embedded. The IR spectrum of NaLa{sub 4}N{sub 2}I{sub 7} recorded from 100 to 1000 cm{sup -1} shows main bands at {upsilon}=337, 373 and 489 cm{sup -1}. With decreasing radii of the lanthanide trications these bands, which can be assigned as an influence of the vibrations of the condensed [NM{sub 4}]{sup 9+} tetrahedra, are shifted toward higher frequencies for the NaM{sub 4}N{sub 2}I{sub 7} series (M=La-Nd), following the lanthanide contraction. - Abstract: View at the main structural features of the NaM{sub 4}N{sub 2}I{sub 7} series (M=La-Nd): The {sup 1}{sub {infinity}}{l_brace}[NM{sub 4/2}{sup e}]{sup 3+}{r_brace} chains, consisting of trans-edge connected [NM{sub 4}]{sup 9+} tetrahedra, and the special kind of iodide anions, namely (I7){sup -}, form cages, in which isolated [NaI{sub 6}]{sup 5-} octahedra are embedded.

  18. Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Huang, Li

    The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL

  19. Adiabatic transformation as a search tool for new topological insulators: Distorted ternary Li2AgSb-class semiconductors and related compounds

    NASA Astrophysics Data System (ADS)

    Lin, Hsin; Das, Tanmoy; Wang, Yung Jui; Wray, L. A.; Xu, S.-Y.; Hasan, M. Z.; Bansil, A.

    2013-03-01

    We demonstrate that the first-principles based adiabatic continuation approach is a very powerful and efficient tool for constructing topological phase diagrams and locating nontrivial topological insulator materials. Using this technique, we predict that the ternary intermetallic series Li2M'X, where M'=Cu, Ag, Au, or Cd and X=Sb, Bi, or Sn, hosts a number of topological insulators with remarkable functional variants and tunability. We also predict that several III-V semimetallic compounds are topologically nontrivial. We construct a topological phase diagram in the parameter space of the atomic numbers of atoms in Li2M'X compounds, which places a large number of topological materials presented in this work as well as in earlier studies within a single unified topological framework. Our results demonstrate the efficacy of adiabatic continuation as a useful tool for exploring topologically nontrivial alloying systems and for identifying new topological insulators even when the underlying lattice does not possess inversion symmetry, and the approaches based on parity analysis are not viable.

  20. Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Biyikli, Necmi; Ozgit-Akgun, Cagla; Eren, Hamit; Haider, Ali; Uyar, Tamer; Kayaci, Fatma; Guler, Mustafa Ozgur; Garifullin, Ruslan; Okyay, Ali K.; Ulusoy, Gamze M.; Goldenberg, Eda

    2015-08-01

    Recent experimental research efforts on developing functional nanostructured III-nitride and metal-oxide materials via low-temperature atomic layer deposition (ALD) will be reviewed. Ultimate conformality, a unique propoerty of ALD process, is utilized to fabricate core-shell and hollow tubular nanostructures on various nano-templates including electrospun nanofibrous polymers, self-assembled peptide nanofibers, metallic nanowires, and multi-wall carbon nanotubes (MWCNTs). III-nitride and metal-oxide coatings were deposited on these nano-templates via thermal and plasma-enhanced ALD processes with thickness values ranging from a few mono-layers to 40 nm. Metal-oxide materials studied include ZnO, TiO2, HfO2, ZrO2, and Al2O3. Standard ALD growth recipes were modified so that precursor molecules have enough time to diffuse and penetrate within the layers/pores of the nano-template material. As a result, uniform and conformal coatings on high-surface area nano-templates were demonstrated. Substrate temperatures were kept below 200C and within the self-limiting ALD window, so that temperature-sensitive template materials preserved their integrity III-nitride coatings were applied to similar nano-templates via plasma-enhanced ALD (PEALD) technique. AlN, GaN, and InN thin-film coating recipes were optimized to achieve self-limiting growth with deposition temperatures as low as 100C. BN growth took place only for >350C, in which precursor decomposition occured and therefore growth proceeded in CVD regime. III-nitride core-shell and hollow tubular single and multi-layered nanostructures were fabricated. The resulting metal-oxide and III-nitride core-shell and hollow nano-tubular structures were used for photocatalysis, dye sensitized solar cell (DSSC), energy storage and chemical sensing applications. Significantly enhanced catalysis, solar efficiency, charge capacity and sensitivity performance are reported. Moreover, core-shell metal-oxide and III-nitride materials

  1. Final LDRD report : enhanced spontaneous emission rate in visible III-nitride LEDs using 3D photonic crystal cavities.

    SciTech Connect

    Fischer, Arthur Joseph; Subramania, Ganapathi S.; Coley, Anthony J.; Lee, Yun-Ju; Li, Qiming; Wang, George T.; Luk, Ting Shan; Koleske, Daniel David; Fullmer, Kristine Wanta

    2009-09-01

    The fundamental spontaneous emission rate for a photon source can be modified by placing the emitter inside a periodic dielectric structure allowing the emission to be dramatically enhanced or suppressed depending on the intended application. We have investigated the relatively unexplored realm of interaction between semiconductor emitters and three dimensional photonic crystals in the visible spectrum. Although this interaction has been investigated at longer wavelengths, very little work has been done in the visible spectrum. During the course of this LDRD, we have fabricated TiO{sub 2} logpile photonic crystal structures with the shortest wavelength band gap ever demonstrated. A variety of different emitters with emission between 365 nm and 700 nm were incorporated into photonic crystal structures. Time-integrated and time-resolved photoluminescence measurements were performed to measure changes to the spontaneous emission rate. Both enhanced and suppressed emission were demonstrated and attributed to changes to the photonic density of states.

  2. Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect

    NASA Astrophysics Data System (ADS)

    Forman, C.; Leonard, J.; Yonkee, B.; Pynn, C.; Mates, T.; Cohen, D.; Farrell, R.; Margalith, T.; DenBaars, S.; Speck, J.; Nakamura, S.

    2017-04-01

    P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages of semipolar (202̅1) and gains the polarization benefits of semipolar (202̅1̅). Here, we investigated semipolar (202̅1) InGaN-based PDLEDs in terms of their photoluminescence (PL) spectra and compositional profile. Despite concerns of the Mg memory effect degrading PDLED performance due to Mg-related non-radiative recombination centers, the PL intensities were nearly identical between the NDLED and PDLEDs, which emitted at wavelengths centered near 500 nm. Secondary ion mass spectrometry revealed that the Mg doping levels in the multiple quantum well (MQW) active region were comparable for each structure, with average values of 2.9×1018 cm-3 for the NDLED and 1.8×1018 cm-3 for the PDLED. Prior to growing the active region MQW, a 700 °C in situ anneal was carried out to reduce the average Mg concentration in the PDLED MQW to 3.7×1017 cm-3. Its hydrogen concentration remained at 5×1019 cm-3 in the p-type GaN region, which suggests that hydrogen passivation occurs during the growth of subsequent epitaxial layers in ammonia.

  3. Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Inatomi, Yuya; Kangawa, Yoshihiro; Kakimoto, Koichi; Koukitu, Akinori

    2017-03-01

    An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas–solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.

  4. Microscopic Optical Characterization of Free Standing III-Nitride Substrates, ZnO Bulk Crystals, and III-V Structures for Non-Linear Optics. Part 2

    DTIC Science & Technology

    2010-05-18

    Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39-18 GIR: Materiales semiconductores y nanoestructuras para la optoelectrónica...de la Materia Condensada Edificio de i+d Paseo de Belen 1 47011 Valladolid, Spain GIR: Materiales semiconductores y nanoestructuras para la...380 400 420 440 460 480 500 520 540 560 580 600 620 nm 1 2 3 2 3 1 GIR: Materiales semiconductores y

  5. III-Nitride Based Optoelectronics

    DTIC Science & Technology

    2010-01-01

    order to satisfy the need of high sensitivity ultraviolet ( UV ) detectors for visible- and solar - blind applications. Examples of this research are...quantum dot baed LEDs, hybrid ZnO-InGaN based green LEDs, multi-quantum well detectors that show internal gain, and nano-structured UV detectors with...show single photon detection capabilities.79-80 A wide variety of (Al,Ga)N detector structures have been extensively studied for visible- and solar

  6. Demonstration of Complementary Ternary Graphene Field-Effect Transistors

    PubMed Central

    Kim, Yun Ji; Kim, So-Young; Noh, Jinwoo; Shim, Chang Hoo; Jung, Ukjin; Lee, Sang Kyung; Chang, Kyoung Eun; Cho, Chunhum; Lee, Byoung Hun

    2016-01-01

    Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can perform the same function as binary logic architecture with a much lower device density and higher information density, a switch device suitable for the ternary logic has been pursued for several decades. However, a single device that satisfies all the requirements for ternary logic architecture has not been demonstrated. We demonstrated a ternary graphene field-effect transistor (TGFET), showing three discrete current states in one device. The ternary function was achieved by introducing a metal strip to the middle of graphene channel, which created an N-P-N or P-N-P doping pattern depending on the work function of the metal. In addition, a standard ternary inverter working at room temperature has been achieved by modulating the work function of the metal in a graphene channel. The feasibility of a ternary inverter indicates that a general ternary logic architecture can be realized using complementary TGFETs. This breakthrough will provide a key stepping-stone for an extreme-low-power computing technology. PMID:27991594

  7. Demonstration of Complementary Ternary Graphene Field-Effect Transistors.

    PubMed

    Kim, Yun Ji; Kim, So-Young; Noh, Jinwoo; Shim, Chang Hoo; Jung, Ukjin; Lee, Sang Kyung; Chang, Kyoung Eun; Cho, Chunhum; Lee, Byoung Hun

    2016-12-19

    Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can perform the same function as binary logic architecture with a much lower device density and higher information density, a switch device suitable for the ternary logic has been pursued for several decades. However, a single device that satisfies all the requirements for ternary logic architecture has not been demonstrated. We demonstrated a ternary graphene field-effect transistor (TGFET), showing three discrete current states in one device. The ternary function was achieved by introducing a metal strip to the middle of graphene channel, which created an N-P-N or P-N-P doping pattern depending on the work function of the metal. In addition, a standard ternary inverter working at room temperature has been achieved by modulating the work function of the metal in a graphene channel. The feasibility of a ternary inverter indicates that a general ternary logic architecture can be realized using complementary TGFETs. This breakthrough will provide a key stepping-stone for an extreme-low-power computing technology.

  8. Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K. (Inventor); Hepp, Aloysius F. (Inventor); Harris, Jerry D. (Inventor); Jin, Michael Hyun-Chul (Inventor); Castro, Stephanie L. (Inventor)

    2006-01-01

    A single source precursor for depositing ternary I-III-VI.sub.2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI.sub.2 stoichiometry built into a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI.sub.2 ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500.degree. C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

  9. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  10. Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

    PubMed Central

    Ahn, Doyeol; Park, Seoung-Hwan

    2016-01-01

    In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

  11. Phase relations and structural properties of the ternary narrow gap semiconductors Zn{sub 5}Sb{sub 4}In{sub 2-{delta}}({delta}=0.15) and Zn{sub 9}Sb{sub 6}In{sub 2}

    SciTech Connect

    Wu Yang; Tenga, Andreas; Lidin, Sven; Haeussermann, Ulrich

    2010-07-15

    A systematic study of the Zn-rich corner of the ternary system Zn-Sb-In revealed the presence of two ternary compounds: stable Zn{sub 5}Sb{sub 4}In{sub 2-{delta}}({delta}=0.15) and metastable Zn{sub 9}Sb{sub 6}In{sub 2} with closely related crystal structures. Their common motif is a tetragonal basic structure of 3{sup 2}434 nets formed by the Sb atoms. The nets are stacked in antiposition to yield layers of square antiprisms sharing edges plus intervening tetracapped tetrahedra (tetreadersterns). The majority of Zn atoms occupy peripheral tetrahedra of such tetraedersterns, which produces frameworks with a composition 'ZnSb'. These frameworks represent orthorhombic superstructures: (2x1x1) for Zn{sub 5}Sb{sub 4}In{sub 2-{delta}}(Z=4) and (2x3x1) for Zn{sub 9}Sb{sub 6}In{sub 2} (Z=8) with respect to the tetragonal arrangement of Sb atoms. The In and remaining Zn atoms are distributed in the channels formed by the square antiprisms. Phase relations in the Zn-Sb-In system are complex. Crystals of metastable Zn{sub 9}Sb{sub 6}In{sub 2} are regularly intergrown with various amounts of Zn{sub 5}Sb{sub 4}In{sub 2-{delta}}. Additionally, a monoclinic variant to orthorhombic Zn{sub 9}Sb{sub 6}In{sub 2} could be identified. Zn{sub 9}Sb{sub 6}In{sub 2} decomposes exothermically into a mixture of Zn{sub 5}Sb{sub 4}In{sub 2-{delta}}, Zn{sub 4}Sb{sub 3} and elemental Zn at around 480 K. Both Zn{sub 5}Sb{sub 4}In{sub 2-{delta}}and Zn{sub 9}Sb{sub 6}In{sub 2} are poor metals with resistivity values that are characteristic of heavily doped or degenerate semiconductors (0.2-3 m {Omega} cm at room temperature). - Graphical abstract: A metastable intermetallic compound with the composition Zn{sub 9}Sb{sub 6}In{sub 2} has been identified in the ternary system Zn-Sb-In. Its structure relates to tetragonal CuAl{sub 2} in that it contains 3{sup 2}434 nets (formed by the Sb atoms) that are stacked in antiposition orientation.

  12. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    NASA Astrophysics Data System (ADS)

    Han, Jung; Kneissl, Michael

    2012-02-01

    Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

  13. Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

    NASA Astrophysics Data System (ADS)

    Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

    2017-03-01

    The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

  14. New ternary praseodymium germanides

    SciTech Connect

    Fedyna, M.F.; Pecharskii, V.K.; Bodak, O.I.

    1987-09-01

    Using the powder method (DRON-2.0 diffractometer; Fe K/sub ..cap alpha../ radiation; theta/2theta recording method, sin theta/sub max//lambda = 5 nm/sup -1/), the crystal structure of the ternary compounds Pr/sub 1-x/(NiGe)/sub 13/ (x = 0.24), Pr/sub 3/Ni/sub 4/Ge/sub 4/, Pr/sub 1-x/(CoGe)/sub 13/ (x = 0.31), Pr/sub 2/Co/sub 3/Ge/sub 5/, and PrFe/sub 1-x/Ge/sub 3/ (x = 0.46) were determined. The germanides P/sub 1-x/(NiGe)/sub 13/ and Pr/sub 1-x/(NiGe)/sub 13/ belong to the structural type of CeNi/sub 8.5/Si/sub 4.5/ and the ternary compounds Pr/sub 3/Ni/sub 4/Ge/sub 4/, Pr/sub 2/Co/sub 3/Ge/sub 5/, and PrFe/sub 1-x/Ge/sub 3/ crystallize in the structural types of U/sub 3/Ni/sub 4/Si/sub 4/, U/sub 2/Co/sub 3/Si/sub 5/, and BaNiSn/sub 3/. During investigations of the equilibrium phase diagrams of the systems Pr-/Fe, Co, Ni/-Ge, new ternary compounds were discovered, viz., Pr/sub 1-x/(NiGe)/sub 13/ (X = 0.24), Pr/sub 3/Ni/sub 4/Ge/sub 4/, Pr/sub 1-x/(CoGe)/sub 13/ (x = 0.31), Pr/sub 2/Co/sub 3/Ge/sub 5/, PrFe/sub 1-x/Ge/sub 3/ (x = 0.46).

  15. High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters

    DTIC Science & Technology

    2010-02-01

    1996. B = Base Plate; C = 2nd Confinement Shell; R = Fused Silica Reactor; 1&2 = Window Connections for PRS Laser Beams; RF = Radio Frequency Coil ...2nd generation HPCVD reactor assembly. The flow channel is designed with a constant cross sectional area for the maintenance of laminar flow and the...Technology, Jan. 20, 2009. 3 “The growth and characterization of InN grown by high-pressure CVD,” Department Solar Energy, Helmholtz -Zentrum

  16. A novel ternary quantum-dot cell for solving majority voter gate problem

    NASA Astrophysics Data System (ADS)

    Tehrani, Mohammad A.; Bahrami, Safura; Navi, Keivan

    2014-03-01

    Since the complementary metal-oxide semiconductor (CMOS) technology has experienced many serious problems in fulfilling the need for more robust and efficient circuits, some emerging nanotechnologies have been introduced as the candidates for replacing CMOS. Quantum-dot cellular automata (QCA) is one of the promising nanotechnology candidates with majority function as its fundamental logic element. It has one implementation in binary QCA and several implantations in ternary QCA, but none of the ternary QCA implementations are as efficient as the binary one. In this paper, a new cell configuration for ternary QCA is proposed which works as well as previous cell configuration. Also, a new design for ternary QCA majority function is proposed which performs faster and occupies less area.

  17. Blue and UV Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Krukowski, S.; Skierbiszewski, C.; Perlin, P.; Leszczynski, M.; Bockowski, M.; Porowski, S.

    2006-04-01

    Despite many technological difficulties the group III nitrides: GaN, AlN and InN and their alloys are primary candidates for electro-optical coherent light sources. In the recent years the research and technology of the nitride based continuous wave (CW) laser diodes (LDs) led to creation of blue-violet coherent light sources of power up to 200 mW. The progress has been attained by using various ways to attack the main obstacles in the technology of these devices such as insufficient size of high quality lattice matched substrates, low p-doping efficiency of Mg acceptor, poor contact to p-type semiconductor and low efficiency of radiative recombination. The two different approaches were used to overcome the substrate problem: hetero-epitaxy and homoepitaxy. Homoepitaxy used high pressure GaN high quality crystals. Heteroepitaxy used sapphire, SiC or GaAs substrates and very sophisticated techniques of reduction of the dislocation density. The low p-doping efficiency by using Mg acceptor is related to creation of Mg--H complexes due to hydrogen presence during the growth of laser diode quantum structures. In addition, Mg acceptor has low efficiency due to its high energy. High Mg concentrations can be obtained by using either MOCVD or ammonia source MBE growth. An alternative route is to use hydrogen-free plasma activated MBE (PA-MBE) method. The recent advances and the prospects of both approaches will be discussed. Solid AlGaInN solution offers a possibility to cover wide spectral range, starting from near UV to blue, green and red. Arsenide based laser diodes (LDs) are efficient coherent red light sources. Therefore, nitride based LDs are considered to be devices of choice for green, blue and UV spectral range. So far only blue and violet laser has been realized. The progress toward green and UV lasers is far less spectacular. The results in all these areas and future prospects will be discussed.

  18. Ternary Fission of CF Isotopes

    NASA Astrophysics Data System (ADS)

    Vermote, S.; Wagemans, C.; Serot, O.; Soldner, T.; Geltenbort, P.; Almahamid, I.; Lukens, W.; Floyd, J.

    2008-04-01

    During the last years, different Cm and Cf isotopes have been studied by our research group in the frame of a systematic investigation of gas emission characteristics in ternary fission. In this paper we report on the energy distribution and the emission probability of 3H, 4He and 6He particles emitted in neutron induced ternary fission of 249Cf and 251Cf. Both measurements were performed at the high flux reactor of the Institute Laue-Langevin (Grenoble, France), using suited ΔE-E telescope detectors, consisting of well-calibrated silicon surface barrier detectors. In this way, the available database can be expanded with new results for Z=98 isotopes, for which the information on neutron induced ternary fission is almost nonexistent. These measurements are important for the systematic investigation of gas emission characteristics in ternary fission.

  19. Ternary complexes in analytical chemistry.

    PubMed

    Babko, A K

    1968-08-01

    Reactions between a complex AB and a third component C do not always proceed by a displacement mechanism governed by the energy difference of the chemical bonds A-B and A-C. The third component often becomes part of the complex, forming a mixed co-ordination sphere or ternary complex. The properties of this ternary complex ABC are not additive functions of the properties of AB and AC. Such reactions are important in many methods in analytical chemistry, particularly in photometric analysis, extractive separation, masking, etc. The general properties of the four basic types of ternary complex are reviewed and examples given. The four types comprise the systems (a) metal ion, electronegative ligand, organic base, (b) one metal ion, two different electronegative ligands, (c) ternary heteropoly acids, and (d) two different metal ions, one ligand.

  20. Group-III Nitride Field Emitters

    NASA Technical Reports Server (NTRS)

    Bensaoula, Abdelhak; Berishev, Igor

    2008-01-01

    Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

  1. Defects in III-nitride microdisk cavities

    NASA Astrophysics Data System (ADS)

    Ren, C. X.; Puchtler, T. J.; Zhu, T.; Griffiths, J. T.; Oliver, R. A.

    2017-03-01

    Nitride microcavities offer an exceptional platform for the investigation of light–matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Microdisk geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we review the effect of defects on the properties of nitride microdisk cavities fabricated using photoelectrochemical etching of an InGaN sacrificial superlattice (SSL). Threading dislocations originating from either the original GaN pseudosubstrate are shown to hinder the undercutting of microdisk cavities during the photoelectric chemical etching process resulting in whiskers of unetched material on the underside of microdisks. The unetched whiskers provide a pathway for light to escape, reducing microdisk Q-factor if located in the region occupied by the WGMs. Additionally, dislocations can affect the spectral stability of quantum dot emitters, thus hindering their effective integration in microdisk cavities. Though dislocations are clearly undesirable, the limiting factor on nitride microdisk Q-factor is expected to be internal absorption, indicating that the further optimisation of nitride microdisk cavities must incorporate both the elimination of dislocations and careful tailoring of the active region emission wavelength and background doping levels.

  2. Device Processing Improvements in III-Nitrides

    DTIC Science & Technology

    2007-11-02

    Engineering University of Florida Gainesville, FL 32611 [gEGQUAiai’i UtSSWJO&\\ PROGRAM ACCOMPLISHMENTS Etching Wet Etching Only molten salts such as KOH...depleted sample. These results indicate that at temperatures where fast etch rates occur, the electrons in the n-type sample are part of the chemical...plasma composition and ion density in ICl/Ar plasma chemistries. Very fast etch rates were achieved for GaN, InN and InGaN in ICl/Ar chemistries. At

  3. Theoretical Studies of Deep Impurity Levels in Ternary Semiconductor Alloys.

    DTIC Science & Technology

    2014-09-26

    the predictions for all sp -bonded (X,X) nearest - neighbor pair states in Si. One interesting result is that near- neighbor (P,P) and (As,As) pairs are...levels [120]. (The shallow levels are "attached" to band edges which depend on the nearest - neighbor overlap integrals - and these integrals change...Hess provided data in collaborative lnteractions). Some successes of the theory for nearest - neighbor pairs in GaAsl_xPx are: (i) It predicts which pairs

  4. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  5. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  6. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    NASA Astrophysics Data System (ADS)

    Chen, Yiren; Song, Hang; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing; Miao, Guoqing

    2014-11-01

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  7. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

    SciTech Connect

    Chen, Yiren; Song, Hang E-mail: lidb@ciomp.ac.cn; Jiang, Hong; Li, Zhiming; Zhang, Zhiwei; Sun, Xiaojuan; Li, Dabing E-mail: lidb@ciomp.ac.cn; Miao, Guoqing

    2014-11-10

    Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors.

  8. Status and prospects for ternary organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Lu, Luyao; Kelly, Mary Allison; You, Wei; Yu, Luping

    2015-08-01

    In the past few years, ternary organic solar cells (OSCs) featuring multiple donor or acceptor materials in the active layer have emerged as a promising structure to simultaneously improve all solar cell parameters compared with traditional binary OSCs. Power conversion efficiencies around 10% have been achieved for conjugated polymers in a ternary structure, showing the great potential of ternary systems. In this review, we summarize progress in developing ternary OSCs and discuss many of the designs, chemistries and mechanisms that have been investigated. We conclude by highlighting the challenges and future directions for further development in the field of ternary blend OSCs.

  9. Lazarevicite-type short-range ordering in ternary III-V nanowires

    NASA Astrophysics Data System (ADS)

    Schnedler, M.; Lefebvre, I.; Xu, T.; Portz, V.; Patriarche, G.; Nys, J.-P.; Plissard, S. R.; Caroff, P.; Berthe, M.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Grandidier, B.

    2016-11-01

    Stabilizing ordering instead of randomness in alloy semiconductor materials is a powerful means to change their physical properties. We used scanning tunneling and transmission electron microscopies to reveal the existence of an unrecognized ordering in ternary III-V materials. The lazarevicite short-range order, found in the shell of InAs1 -xSbx nanowires, is driven by the strong Sb-Sb repulsion along <110 > atomic chains during their incorporation on unreconstructed {110 } sidewalls. Its spontaneous formation under group-III-rich conditions of growth offers the prospect to broaden the limited classes of ordered structures occurring in III-V semiconductor alloys.

  10. Surface Segregation in Ternary Alloys

    NASA Technical Reports Server (NTRS)

    Good, Brian; Bozzolo, Guillermo H.; Abel, Phillip B.

    2000-01-01

    Surface segregation profiles of binary (Cu-Ni, Au-Ni, Cu-Au) and ternary (Cu-Au-Ni) alloys are determined via Monte Carlo-Metropolis computer simulations using the BFS method for alloys for the calculation of the energetics. The behavior of Cu or Au in Ni is contrasted with their behavior when both are present. The interaction between Cu and Au and its effect on the segregation profiles for Cu-Au-Ni alloys is discussed.

  11. Bandgap tunable colloidal Cu-based ternary and quaternary chalcogenide nanosheets via partial cation exchange

    NASA Astrophysics Data System (ADS)

    Ramasamy, Parthiban; Kim, Miri; Ra, Hyun-Soo; Kim, Jinkwon; Lee, Jong-Soo

    2016-04-01

    Copper based ternary and quaternary semiconductor nanostructures are of great interest for the fabrication of low cost photovoltaics. Although well-developed syntheses are available for zero dimensional (0D) nanoparticles, colloidal synthesis of two dimensional (2D) nanosheets remains a big challenge. Here we report, for the first time, a simple and reproducible cation exchange approach for 2D colloidal Cu2GeSe3, Cu2ZnGeSe4 and their alloyed Cu2GeSxSe3-x, Cu2ZnGeSxSe4-x nanosheets using pre-synthesized Cu2xSe nanosheets as a template. A mechanism for the formation of Cu2-xSe nanosheets has been studied in detail. In situ oxidation of Cu+ ions to form a CuSe secondary phase facilitates the formation of Cu2-xSe NSs. The obtained ternary and quaternary nanosheets have average lateral size in micrometers and thickness less than 5 nm. This method is general and can be extended to produce other important ternary semiconductor nanosheets such as CuIn1-xGaxSe2. The optical band gap of these nanosheets is tuned from 1 to 1.48 eV, depending on their composition.Copper based ternary and quaternary semiconductor nanostructures are of great interest for the fabrication of low cost photovoltaics. Although well-developed syntheses are available for zero dimensional (0D) nanoparticles, colloidal synthesis of two dimensional (2D) nanosheets remains a big challenge. Here we report, for the first time, a simple and reproducible cation exchange approach for 2D colloidal Cu2GeSe3, Cu2ZnGeSe4 and their alloyed Cu2GeSxSe3-x, Cu2ZnGeSxSe4-x nanosheets using pre-synthesized Cu2xSe nanosheets as a template. A mechanism for the formation of Cu2-xSe nanosheets has been studied in detail. In situ oxidation of Cu+ ions to form a CuSe secondary phase facilitates the formation of Cu2-xSe NSs. The obtained ternary and quaternary nanosheets have average lateral size in micrometers and thickness less than 5 nm. This method is general and can be extended to produce other important ternary

  12. Metal biosorption equilibria in a ternary system

    SciTech Connect

    Chong, K.H.; Volesky, B.

    1996-03-20

    Equilibrium metal uptake performance of a biosorbent prepared from Ascophyllum nodosum seaweed biomass was studied using aqueous solutions containing copper, cadmium, and zinc ions in binary and ternary mixtures. Triangular equilibrium diagrams can graphically represent all the ternary equilibrium sorption data. Application of the multicomponent Langmuir model to describe the three-metal system revealed its nonideal characteristics, whereby the value of apparent dissociation constants for the respective metals differed for each system. This restricted the prediction of the ternary equilibria from the binary systems. However, some predictions of the ternary system behavior from the model were consistent with experimental data and with conclusions postulated from the three possible binary subsystems.

  13. Thermoelectric materials ternary penta telluride and selenide compounds

    DOEpatents

    Sharp, Jeffrey W.

    2001-01-01

    Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

  14. Thermoelectric materials: ternary penta telluride and selenide compounds

    DOEpatents

    Sharp, Jeffrey W.

    2002-06-04

    Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

  15. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  16. Application of quaternary phase diagrams to compound semiconductor processing

    SciTech Connect

    Sinclair, R.

    1994-10-01

    Isobaric, isothermal phase diagrams are a molar representation of condensed phases in equilibrium with each other at a fixed temperature, pressure, and composition. Since three or four elements are usually involved at a fabricated interface in a semiconductor device, knowledge of the appropriate ternary or quaternary phase diagram is important for optimizing the processing parameters and designing long term stability of devices. While the use of phase diagrams is well-established in the fields of metallurgy, ceramics and mineralogy, only recently have phase diagrams been employed to provide a framework for understanding thin film reactions on a substrate, encountered in semiconductor processing. Even though there are many examples of applications of ternary phase diagrams in the semiconductor literature (for instance, metallization of GaAs, the use of refractory metal silicides for metallization layers in VLSI devices and oxidation of III-V compounds), the same is not true for quaternary phase diagrams. To date, the only application is oxidation of mercury cadmium telluride. This lack of examples is not warranted, as four elements are often involved at a critical interface in compound semiconductor processing and devices. This paper reports on the progress made to remedy this situation by considering the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Moreover, for the first time, solid solubility is taken into account for quaternary phase diagrams of semiconductor systems.

  17. TERNARY ALLOY-CONTAINING PLUTONIUM

    DOEpatents

    Waber, J.T.

    1960-02-23

    Ternary alloys of uranium and plutonium containing as the third element either molybdenum or zirconium are reported. Such alloys are particularly useful as reactor fuels in fast breeder reactors. The alloy contains from 2 to 25 at.% of molybdenum or zirconium, the balance being a combination of uranium and plutonium in the ratio of from 1 to 9 atoms of uranlum for each atom of plutonium. These alloys are prepared by melting the constituent elements, treating them at an elevated temperature for homogenization, and cooling them to room temperature, the rate of cooling varying with the oomposition and the desired phase structure. The preferred embodiment contains 12 to 25 at.% of molybdenum and is treated by quenching to obtain a body centered cubic crystal structure. The most important advantage of these alloys over prior binary alloys of both plutonium and uranium is the lack of cracking during casting and their ready machinability.

  18. All-optical symmetric ternary logic gate

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  19. Electrical and magneto resistance studies of bulk Ga 1- xNi xSb ternary alloys

    NASA Astrophysics Data System (ADS)

    Kamilla, S. K.; Hazra, S. K.; Samantaray, B. K.; Basu, S.

    2011-01-01

    Ternary semiconductor alloys of Ga 1- xNi xSb were grown with different Ni concentrations by vertical Bridgman method with well-defined temperature profile for possible applications as Diluted Magnetic Semiconductor (DMS). The electrical properties of the grown samples were studied in the temperature range 78-300 K by Hall effect measurements using van der Pauw configurations. The positive sign of Hall coefficient confirmed p-type conductivity of the grown samples. The results of the measurements at 300 K indicate that resistivity, Hall coefficient and hole mobility decrease while the hole concentration increases with the increasing Ni concentrations from 0.5% to 2.8% in Ga 1- xNi xSb ternary alloys. The magneto resistance studies at different magnetic fields (≤10 kG) and in the temperature range 78-300 K showed positive magneto resistance and the Arrott plots revealed very low Curie temperature of the material ( <78 K).

  20. Some Geometric Aspects of the Ternary Diagram.

    ERIC Educational Resources Information Center

    Philip, G. M.; Watson, D. F.

    1989-01-01

    Uses the process of normalization in the Cartesian coordinate system which entails radial projection onto a transect to compare different compositions of minerals. Warns that the ternary diagram should not be used as a framework for calculations. (MVL)

  1. Rational Development of Ternary Alloy Electrocatalysts

    SciTech Connect

    Wang, Chao; Li, Dongguo; Chi, Miaofang; Pearson, John; Rankin, Rees; Greeley, Jeff; Duan, Zhiyao; Wang, Guofeng; Van der Vliet, Dennis; More, Karren Leslie; Markovic, Nenad; Stamenkovic, Vojislav

    2012-01-01

    Improving the efficiency of electrocatalytic reduction of oxygen represents one of the main challenges for the development of renewable energy technologies. Here, we report the systematic evaluation of Pt-ternary alloys (Pt{sub 3}(MN){sub 1} with M, N = Fe, Co, or Ni) as electrocatalysts for the oxygen reduction reaction (ORR). We first studied the ternary systems on extended surfaces of polycrystalline thin films to establish the trend of electrocatalytic activities and then applied this knowledge to synthesize ternary alloy nanocatalysts by a solvothermal approach. This study demonstrates that the ternary alloy catalysts can be compelling systems for further advancement of ORR electrocatalysis, reaching higher catalytic activities than bimetallic Pt alloys and improvement factors of up to 4 versus monometallic Pt.

  2. Luminescent Colloidal Semiconductor Nanocrystals Containing Copper: Synthesis, Photophysics, and Applications.

    PubMed

    Knowles, Kathryn E; Hartstein, Kimberly H; Kilburn, Troy B; Marchioro, Arianna; Nelson, Heidi D; Whitham, Patrick J; Gamelin, Daniel R

    2016-09-28

    Copper-doped semiconductors are classic phosphor materials that have been used in a variety of applications for many decades. Colloidal copper-doped semiconductor nanocrystals have recently attracted a great deal of interest because they combine the solution processability and spectral tunability of colloidal nanocrystals with the unique photoluminescence properties of copper-doped semiconductor phosphors. Although ternary and quaternary semiconductors containing copper, such as CuInS2 and Cu2ZnSnS4, have been studied primarily in the context of their photovoltaic applications, when synthesized as colloidal nanocrystals, these materials have photoluminescence properties that are remarkably similar to those of copper-doped semiconductor nanocrystals. This review focuses on the luminescent properties of colloidal copper-doped, copper-based, and related copper-containing semiconductor nanocrystals. Fundamental investigations into the luminescence of copper-containing colloidal nanocrystals are reviewed in the context of the well-established luminescence mechanisms of bulk copper-doped semiconductors and copper(I) molecular coordination complexes. The use of colloidal copper-containing nanocrystals in applications that take advantage of their luminescent properties, such as bioimaging, solid-state lighting, and luminescent solar concentrators, is also discussed.

  3. Utilizing Energy Transfer in Binary and Ternary Bulk Heterojunction Organic Solar Cells.

    PubMed

    Feron, Krishna; Cave, James M; Thameel, Mahir N; O'Sullivan, Connor; Kroon, Renee; Andersson, Mats R; Zhou, Xiaojing; Fell, Christopher J; Belcher, Warwick J; Walker, Alison B; Dastoor, Paul C

    2016-08-17

    Energy transfer has been identified as an important process in ternary organic solar cells. Here, we develop kinetic Monte Carlo (KMC) models to assess the impact of energy transfer in ternary and binary bulk heterojunction systems. We used fluorescence and absorption spectroscopy to determine the energy disorder and Förster radii for poly(3-hexylthiophene-2,5-diyl), [6,6]-phenyl-C61-butyric acid methyl ester, 4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]squaraine (DIBSq), and poly(2,5-thiophene-alt-4,9-bis(2-hexyldecyl)-4,9-dihydrodithieno[3,2-c:3',2'-h][1,5]naphthyridine-5,10-dione). Heterogeneous energy transfer is found to be crucial in the exciton dissociation process of both binary and ternary organic semiconductor systems. Circumstances favoring energy transfer across interfaces allow relaxation of the electronic energy level requirements, meaning that a cascade structure is not required for efficient ternary organic solar cells. We explain how energy transfer can be exploited to eliminate additional energy losses in ternary bulk heterojunction solar cells, thus increasing their open-circuit voltage without loss in short-circuit current. In particular, we show that it is important that the DIBSq is located at the electron donor-acceptor interface; otherwise charge carriers will be trapped in the DIBSq domain or excitons in the DIBSq domains will not be able to dissociate efficiently at an interface. KMC modeling shows that only small amounts of DIBSq (<5% by weight) are needed to achieve substantial performance improvements due to long-range energy transfer.

  4. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOEpatents

    Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

    1998-06-23

    A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

  5. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    DOEpatents

    Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

    1998-01-01

    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVternary or quaternary III-V semiconductor active layers.

  6. Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

    SciTech Connect

    Uddin, M. R.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.; Ziemer, K. S.

    2014-08-15

    The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm{sup 2}/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C{sub 3}H{sub 8})) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN){sub 1-x}(C{sub 2}){sub x} alloys n-type and corroborates the Hall-effect measurement results.

  7. Review on optical and electrical properties of oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Dong Lim; Kim, Hyun Jae

    2010-03-01

    Oxide semiconductors became one of the potential elements for large area electronics such as a channel for thin film transistors. Optical and electrical properties were modified by alloying or doping of several oxide materials; In2O3, ZnO, Ga2O3, and SnO2. The excellent properties achieved at the ternary or quaternary alloys could be explained by the role of each materials as a carrier controller, a conduction path, and etc. The metal oxide semiconductors were generally deposited by vacuum process but recently, alternative ways, like a sol-gel or an ink-jet printing, are suggested. In this review, diverse approaches on oxide semiconductors are shown, and an in-depth discussion of the optical and electrical properties alternation in metal oxide alloy fabricated by various methods is given.

  8. Organic ternary solar cells: a review.

    PubMed

    Ameri, Tayebeh; Khoram, Parisa; Min, Jie; Brabec, Christoph J

    2013-08-21

    Recently, researchers have paid a great deal of attention to the research and development of organic solar cells, leading to a breakthrough of over 10% power conversion efficiency. Though impressive, further development is required to ensure a bright industrial future for organic photovoltaics. Relatively narrow spectral overlap of organic polymer absorption bands within the solar spectrum is one of the major limitations of organic solar cells. Among different strategies that are in progress to tackle this restriction, the novel concept of ternary organic solar cells is a promising candidate to extend the absorption spectra of large bandgap polymers to the near IR region and to enhance light harvesting in single bulk-heterojunction solar cells. In this contribution, we review the recent developments in organic ternary solar cell research based on various types of sensitizers. In addition, the aspects of miscibility, morphology complexity, charge transfer dynamics as well as carrier transport in ternary organic composites are addressed.

  9. Optimal Symmetric Ternary Quantum Encryption Schemes

    NASA Astrophysics Data System (ADS)

    Wang, Yu-qi; She, Kun; Huang, Ru-fen; Ouyang, Zhong

    2016-11-01

    In this paper, we present two definitions of the orthogonality and orthogonal rate of an encryption operator, and we provide a verification process for the former. Then, four improved ternary quantum encryption schemes are constructed. Compared with Scheme 1 (see Section 2.3), these four schemes demonstrate significant improvements in term of calculation and execution efficiency. Especially, under the premise of the orthogonal rate ɛ as secure parameter, Scheme 3 (see Section 4.1) shows the highest level of security among them. Through custom interpolation functions, the ternary secret key source, which is composed of the digits 0, 1 and 2, is constructed. Finally, we discuss the security of both the ternary encryption operator and the secret key source, and both of them show a high level of security and high performance in execution efficiency.

  10. Ternary fission of nuclei into comparable fragments

    SciTech Connect

    Karpeshin, F. F.

    2015-07-15

    The problem of nuclear fission into three comparable fragments is considered. A mechanism of true ternary fission is proposed. In contrast to sequential fission, where the three fragments arise upon two sequential events of binary fission, the mechanism in question relies on a scenario that originally involves fission into three fragments. This mechanism is driven by a hexadecapole deformation of the fissioning nucleus, in contrast to binary fission associated with quadrupole vibrations of the nuclear surface. The fragment-mass ratios are estimated. The dynamics of formation of collinear fragments and their subsequent motion in opposite directions is traced. The calculated probability of true ternary fission complies with observed values.

  11. Ternary fission of nuclei into comparable fragments

    NASA Astrophysics Data System (ADS)

    Karpeshin, F. F.

    2015-07-01

    The problem of nuclear fission into three comparable fragments is considered. A mechanism of true ternary fission is proposed. In contrast to sequential fission, where the three fragments arise upon two sequential events of binary fission, the mechanism in question relies on a scenario that originally involves fission into three fragments. This mechanism is driven by a hexadecapole deformation of the fissioning nucleus, in contrast to binary fission associated with quadrupole vibrations of the nuclear surface. The fragment-mass ratios are estimated. The dynamics of formation of collinear fragments and their subsequent motion in opposite directions is traced. The calculated probability of true ternary fission complies with observed values.

  12. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  13. A New Commercializable Route for the Preparation of Single-Source Precursors for Bulk, Thin-Film, and Nanocrystallite I-III-IV Semiconductors

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Jin, Michael H. C.; Harris, Jerry D.; Fanwick, Philip E.; Hepp, Aloysius F.

    2004-01-01

    We report a new simplified synthetic procedure for commercial manufacture of ternary single source precursors (SSP). This new synthetic process has been successfully implemented to fabricate known SSPs on bulk scale and the first liquid SSPs to the semiconductors CuInSe2 and AgIn(x)S(y). Single crystal X-ray determination reveals the first unsolvated ternary AgInS SSP. SSPs prepared via this new route have successfully been used in a spray assisted chemical vapor deposition (CVD) process to deposit polycrystalline thin films, and for preparing ternary nanocrystallites.

  14. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  15. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  16. Growth mechanism of nanowires: binary and ternary chalcogenides

    NASA Astrophysics Data System (ADS)

    Singh, N. B.; Coriell, S. R.; Su, Ching Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-05-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acoustooptical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  17. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    NASA Technical Reports Server (NTRS)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  18. Infrared Plasmonics with Conductive Ternary Nitrides.

    PubMed

    Metaxa, C; Kassavetis, S; Pierson, J F; Gall, D; Patsalas, P

    2017-03-29

    Conductive transition metal nitrides are emerging as promising alternative plasmonic materials that are refractory and CMOS-compatible. In this work, we show that ternary transition metal nitrides of the B1 structure and consisting of a combination of group-IVb transition metal, such as Ti or Zr, and group III (Sc, Y, Al) or group II (Mg, Ca) elements can have tunable plasmonic activity in the infrared range in contrast to Ta-based ternary nitrides, which exhibit plasmonic performance in the visible and UV ranges. We consider the intrinsic quality factors of surface plasmon polariton for the ternary nitrides, and we calculate the dispersion of surface plasmon polariton and the field enhancement at the vicinity of nitride/silica interfaces. Based on these calculations, it is shown that among these nitrides the most promising are TixSc1-xN and TixMg1-xN. In particular, TixSc1-xN can have plasmonic activity in the usual telecom bands at 850, 1300, and 1550 nm. Still, these nitrides exhibit substantial electronic losses mostly due to fine crystalline grains that deteriorate the plasmonic field enhancement. This unequivocally calls for improved growth processes that would enable the fabrication of such ternary nitrides of high crystallinity.

  19. TERNARY ALLOYS OF URANIUM, COLUMBIUM, AND ZIRCONIUM

    DOEpatents

    Foote, F.G.

    1960-08-01

    Ternary alloys of uranium are described which are useful as neutron- reflecting materials in a fast neutron reactor. They are especially resistant to corrosion caused by oxidative processes of gascous or aqueous origin and comprise uranium as the predominant metal with zirconiunn and niobium wherein the total content of the minor alloying elements is between 2 and 8% by weight.

  20. Ternary rare earth-lanthanide sulfides

    DOEpatents

    Takeshita, Takuo; Gschneidner JR., Karl A.; Beaudry, Bernard J.

    1987-01-06

    A new ternary rare earth sulfur compound having the formula: where M is a rare earth element selected from the group europium, samarium and ytterbium and x=0.15 to 0.8. The compound has good high-temperature thermoelectric properties and exhibits long-term structural stability up to 1000.degree. C.

  1. Ternary Dy-Er-Al magnetic refrigerants

    DOEpatents

    Gschneidner, Jr., Karl A.; Takeya, Hiroyuki

    1995-07-25

    A ternary magnetic refrigerant material comprising (Dy.sub.1-x Er.sub.x)Al.sub.2 for a magnetic refrigerator using the Joule-Brayton thermodynamic cycle spanning a temperature range from about 60K to about 10K, which can be adjusted by changing the Dy to Er ratio of the refrigerant.

  2. Ternary Dy-Er-Al magnetic refrigerants

    DOEpatents

    Gschneidner, K.A. Jr.; Takeya, Hiroyuki

    1995-07-25

    A ternary magnetic refrigerant material comprising (Dy{sub 1{minus}x}Er{sub x})Al{sub 2} for a magnetic refrigerator using the Joule-Brayton thermodynamic cycle spanning a temperature range from about 60K to about 10K, which can be adjusted by changing the Dy to Er ratio of the refrigerant. 29 figs.

  3. Designing ternary blend bulk heterojunction solar cells with reduced carrier recombination and a fill factor of 77%

    NASA Astrophysics Data System (ADS)

    Gasparini, Nicola; Jiao, Xuechen; Heumueller, Thomas; Baran, Derya; Matt, Gebhard J.; Fladischer, Stefanie; Spiecker, Erdmann; Ade, Harald; Brabec, Christoph J.; Ameri, Tayebeh

    2016-09-01

    In recent years the concept of ternary blend bulk heterojunction (BHJ) solar cells based on organic semiconductors has been widely used to achieve a better match to the solar irradiance spectrum, and power conversion efficiencies beyond 10% have been reported. However, the fill factor of organic solar cells is still limited by the competition between recombination and extraction of free charges. Here, we design advanced material composites leading to a high fill factor of 77% in ternary blends, thus demonstrating how the recombination thresholds can be overcome. Extending beyond the typical sensitization concept, we add a highly ordered polymer that, in addition to enhanced absorption, overcomes limits predicted by classical recombination models. An effective charge transfer from the disordered host system onto the highly ordered sensitizer effectively avoids traps of the host matrix and features an almost ideal recombination behaviour.

  4. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  5. Coherent spectroscopy of semiconductors.

    PubMed

    Cundiff, Steven T

    2008-03-31

    The coherent optical response of semiconductors has been the subject of substantial research over the last couple of decades. The interest has been motivated by unique aspects of the interaction between light and semiconductors that are revealed by coherent techniques. The ability to probe the dynamics of charge carriers has been a significant driver. This paper presents a review of selected results in coherent optical spectroscopy of semiconductors.

  6. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  7. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  8. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  9. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  10. Dynamic thermodiffusion theory for ternary liquid mixtures

    NASA Astrophysics Data System (ADS)

    Eslamian, Morteza; Ziad Saghir, M.

    2010-04-01

    Following the non-equilibrium thermodynamics approach, we develop expressions for the calculation of the thermal diffusion coefficients in a ternary system. On the basis of some physical justifications, we approximate the net heat of transport with the activation energy of viscous flow. In parallel, we revisit the Kempers model and propose new expressions for the estimation of the thermal diffusion factors in a ternary mixture. The proposed expressions are based on a dynamic modeling approach, as they incorporate the activation energy of viscous flow, which is a fluid flow property and contains the effects of some of the parameters that govern thermodiffusion. The proposed expressions, the Kempers and Ghorayeb-Firoozabadi-Shukla models are evaluated against the experimental data. Our expression which was developed on the basis of the Kempers approach has the best performance.

  11. On the capacity of ternary Hebbian networks

    NASA Technical Reports Server (NTRS)

    Baram, Yoram

    1991-01-01

    Networks of ternary neurons storing random vectors over the set -1,0,1 by the so-called Hebbian rule are considered. It is shown that the maximal number of stored patterns that are equilibrium states of the network with probability tending to one as N tends to infinity is at least on the order of (N exp 2-1/alpha)/K, where N is the number of neurons, K is the number of nonzero elements in a pattern, and t = alpha x K, alpha between 1/2 and 1, is the threshold in the neuron function. While, for small K, this bound is similar to that obtained for fully connected binary networks, the number of interneural connections required in the ternary case is considerably smaller. Similar bounds, incorporating error probabilities, are shown to guarantee, in the same probabilistic sense, the correction of errors in the nonzero elements and in the location of these elements.

  12. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics.

    PubMed

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gómez, Andrés; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Müller, Christian

    2017-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm(-1) and Seebeck coefficient from 100 to 60 μV K(-1) upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m(-1) K(-1) gives rise to a thermoelectric Figure of merit ZT ∼ 10(-4) that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  13. Ternary rare earth-lanthanide sulfides

    DOEpatents

    Takeshita, Takuo; Gschneidner, Jr., Karl A.; Beaudry, Bernard J.

    1987-01-06

    A new ternary rare earth sulfur compound having the formula: La.sub.3-x M.sub.x S.sub.4 where M is a rare earth element selected from the group europium, samarium and ytterbium and x=0.15 to 0.8. The compound has good high-temperature thermoelectric properties and exhibits long-term structural stability up to 1000.degree. C.

  14. Growth and Fabrication of III-Nitride Deep Ultraviolet Emitters

    NASA Astrophysics Data System (ADS)

    Tahtamouni, T. M. Al

    2005-03-01

    In recent years, there has been a great effort to develop AlGaN based compact deep ultraviolet (UV) light-emitting diodes (LEDs) (λ< 300 nm) for applications such as bio-chemical agent detection and medical research/health care. To obtain deep UV emission with λ< 300 nm, AlGaN quantum well (QW) based LED structures require an active layer with Al composition higher than 40%. As a result, the alloy composition for p- and n-cladding layers should be more than that of the active layer. The high Al composition introduces dislocations and leads to poor p- and n-type conductivity in the cladding layers, which limits current injection. We report here on the epitaxial growth of deep UV LEDs with operating wavelengths ranging from 300 nm to 270 nm by metal-organic chemical vapor deposition (MOCVD). Our UV LED structure was deposited on AlN/sapphire templates. We have achieved deep UV LEDs with an output power of 1.4 mW at 350 mA dc driving at 280 nm. The use of AlN epilayers as templates to reduce the dislocation density and enhance the LED performance will be discussed. Different device architectures for enhanced LED performances will also be presented.

  15. High pressure phase transition in group III nitrides compounds

    NASA Astrophysics Data System (ADS)

    Soni, Shubhangi; Verma, S.; Kaurav, Netram; Choudhary, K. K.

    2016-05-01

    Using an effective interionic interaction potential (EIOP), the pressure induced structural phase transformation from ZnS-type (B3) to NaCl-type (B1) structure in group III Post-Transition Metal Nitrides [TMN; TM=Ga and Tl] were investigated. The long range Coulomb, van der Waals (vdW) interaction and the short-range repulsive interaction upto second-neighbor ions within the Hafemeister and Flygare approach with modified ionic charge are properly incorporated in the EIOP. The vdW coefficients are computed following the Slater-Kirkwood variational method, as both the ions are polarizable. The estimated value of the phase transition pressure (Pt) and the magnitude of the discontinuity in volume at the transition pressure are consistent as compared to the reported data.

  16. Microstructures of mixed group III-nitride epitaxial layers

    NASA Astrophysics Data System (ADS)

    Westmeyer, Andrew Nathan

    InGaN and AlGaN epitaxial layers were deposited by metalorganic chemical vapor deposition on sapphire substrates with GaN buffer layers. For the growth of InGaN at a given temperature, the trimethylgallium flow rate has the greatest influence on the In incorporation, whereas the trimethylindium flow rate has little influence. These effects are attributed to the suppression of In desorption by increasing the growth rate and the saturation of the surface with In adatoms, respectively. If the growth temperature is increased by 2.4°C, then the In content is lowered by 1% for the investigated temperature range of 785--845°C. For the growth of AlGaN, the solid fraction of Al has a sub-linear dependence on the gas composition. This was attributed to the composition pulling effect, in which incoming species are rejected in order to reduce the strain with the underlying buffer layer. A strain analysis was performed on all samples by X-ray diffraction in order to determine the composition and degree of relaxation. These values were compared to those obtained by Rutherford backscattering spectroscopy. By this method the varied reported values for elastic constants were evaluated to ascertain which set provided the best correlation. Transmission electron microscopy was performed. Plan-view images of InGaN contain domains differing in the direction of the modulations. Zone-axis diffraction patterns reveal sidebands adjacent to several Bragg reflections. These observations can be explained by diffraction effects resulting from periodic composition modulations, which are an intermediate stage in the process of phase separation. Since Young's modulus for the nitrides is isotropic in the (0001) plane, no particular direction is favored for the modulations based on strain energy considerations. In the case of AlGaN, periodic composition modulations are observed not in the growth plane (0001) but in the growth direction [0001]. Satellites in diffraction patterns are aligned in this direction. The films exhibit lateral homogeneity due to the high diffusion rates at the growth temperature, but a vertical periodicity due to competition for incorporation between Al and Ga species. The existence of ordering was investigated by both electron and X-ray diffraction, and was not detected in any sample.

  17. Fermi level stabilization energy in group III-nitrides

    SciTech Connect

    Li, S.X.; Yu, K.M.; Wu, J.; Jones, R.E.; Walukiewicz, W.; AgerIII, J.W.; Shan, W.; Haller, E.E.; Lu, Hai; Schaff, William J.

    2005-01-07

    Energetic particle irradiation is used to systematically introduce point defects into In{sub 1-x}Ga{sub x}N alloys over the entire composition range. Three types of energetic particles (electrons, protons, and {sup 4}He{sup +}) are used to produce a displacement damage dose spanning five decades. In InN and In-rich InGaN the free electron concentration increases with increasing irradiation dose but saturates at a sufficiently high dose. The saturation is due to Fermi level pinning at the Fermi Stabilization Energy (E{sub FS}), which is located at 4.9 eV below the vacuum level. Electrochemical capacitance-voltage (ECV) measurements show that the pinning of the surface Fermi energy at E{sub FS} is also responsible for the surface electron accumulation in as-grown InN and In-rich InGaN alloys. The results are in agreement with the amphoteric defect model that predicts that the same type of native defects are responsible for the Fermi level pinning in both cases.

  18. Failure Mechanisms for III-Nitride HEMT Devices

    DTIC Science & Technology

    2013-11-19

    spectroscopy ( EDXS ). The technique of energy-filtered imaging uses electrons which have lost characteristic element-specific amounts of energy to provide...to 0.14nm, and focused probe size down to ~ 0.5nm. This instrument is equipped for energy-dispersive X-ray spectroscopy ( EDXS ) as well as parallel...imaging, EDXS and EELS. iii) JEM-4000EX 400-kV high-resolution electron microscope with point resolution of better than 0.17nm. iv) FEI Nova 200 dual

  19. Wide-bandgap III-Nitride based Second Harmonic Generation

    DTIC Science & Technology

    2014-10-02

    μm thick Pt protective layer using an ion beam induced deposition with a 0.43 nA beam current. Next we have milled a cross-section using a 6.5 nA... ion beam . This was followed by an 80 pA milling of the exposed cross-section, to obtain a polished surface. III-polar GaN waveguides were then...thickness of 0.9 μm and width of 5 μm. The front and back edges are etched by focused ion beam to achieve higher coupling efficiency. A scan

  20. III-Nitride Visible- and Solar-Blind Avalanche Photodiodes

    DTIC Science & Technology

    2007-12-01

    Manager: Dr. Donald Silversmith – Air Force Office of Scientific Research Principal Investigator: Professor Manijeh Razeghi Center for...photodiodes K. Minder, J.L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi and D. Silversmith Applied Physics Letters, Vol. 91, No. 7, p. 073513-1...M. Razeghi, E. Muñoz, and D. Silversmith Applied Physics Letters, Vol. 91, No. 04, p. 041104 -1-- July 23, 2007 3. Hole-initiated multiplication

  1. Analysis of Stoichiometry-Related Defects in Group III - Nitrides

    DTIC Science & Technology

    2003-12-31

    defect determination 05 2.1 In-situ Defect Determination: DRS 05 2.2 Overview: Reproducible LT-GaAs growth 08 2.3 Ultrahigh-doped epilayers and their...Low temperature growth of GaAs and defect determination 2.1 In-situ Defect Determination: DRS In an effort to develop the use of common measurement...systems for the evaluation of the defect population in MBE grown III-V epilayers we applied in-situ diffuse reflectance spectroscopy ( DRS ) to monitor

  2. III-Nitride advanced technologies and equipment for microelectronics

    NASA Astrophysics Data System (ADS)

    Petrov, S. I.; Alexeev, A. N.; Mamaev, V. V.; Krasovitsky, D. M.; Chaly, V. P.

    2016-12-01

    Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the "Svetlana-Rost" JSC. Basic technological operations are shown: MBE growth of heterostructures, metal deposition of contacts using electron-beam evaporation system, thermal annealing of ohmic contacts, meza-isolation plasma-chemical etching and dielectric plasma deposition. The main problems during the technological route as well as ways to solve are discussed. In particular, ways to reduce the dislocation density in the active region of the transistor heterostructures grown on the mismatched substrates are described in detail. Special attention given to the homogeneity and reproducibility both after some manufacturing operations and applied to the end product.

  3. Cracking of III-nitride layers with strain gradients

    NASA Astrophysics Data System (ADS)

    Romanov, A. E.; Beltz, G. E.; Cantu, P.; Wu, F.; Keller, S.; DenBaars, S. P.; Speck, J. S.

    2006-10-01

    Experimental results are demonstrated for the cracking of nominally compressed AlyGa1-yN layers grown on AlxGa1-xN buffer layers with smaller lattice constants (y

  4. More statistics on intermetallic compounds - ternary phases.

    PubMed

    Dshemuchadse, Julia; Steurer, Walter

    2015-05-01

    How many different intermetallic compounds are known so far, and in how many different structure types do they crystallize? What are their chemical compositions, the most abundant ones and the rarest ones? These are some of the questions we are trying to find answers for in our statistical analysis of the structures of the 20,829 intermetallic phases included in the database Pearson's Crystal Data, with the goal of gaining insight into some of their ordering principles. In the present paper, we focus on the subset of 13,026 ternary intermetallics, which crystallize in 1391 different structure types; remarkably, 667 of them have just one representative. What makes these 667 structures so unique that they are not adopted by any other of the known intermetallic compounds? Notably, ternary compounds are known in only 5109 of the 85,320 theoretically possible ternary intermetallic systems so far. In order to get an overview of their chemical compositions we use structure maps with Mendeleev numbers as ordering parameters.

  5. The ternary system uranium-boron-carbon

    NASA Astrophysics Data System (ADS)

    Rogl, Peter; Bauer, Josef; Debuigne, Jean

    1989-04-01

    Phase equilibria in the ternary system U-B-C have been established by means of X-ray, metallographic and melting point analyses in the temperature range from 1000 ° C to melting. Three ternary compounds were found to exist: besides the well known monoboroncarbide UBC two new uranium boroncarbides, UB 2C and "U 5B 2C 7". Ternary phase equilibria are characterized by the incompatibility of uranium metal with boroncarbide B 4C and by the incompatibility of elemental boron and uranium carbides; an isothermal section of the system U-B-C at 1600° C is presented. At high temperatures the crystal structure of UB 2C was found to be isotypic with the homologous compound ThB 2C; at temperatures below (1675 ± 25)°C h-UB 2C transforms into a low temperature modification with a new (unknown) structure type. The crystal structure of "U 5B 2C 7" is closely related to the structure type of Ho 5B 2C 6-7 as a derivative of La 52C 6 Employing the Pirani-technique, congruent melting was revealed for UBC and UB 2C at (2144 ± 25)°C and (2282 ± 30)°C respectively. Using the clear-cross principle in studying possible phase reactions, the thermodynamic stabilities of UBC, UB 2C and U 5B 2C 7 were estimated.

  6. Electrochemical photovoltaic cell having ternary alloy film

    DOEpatents

    Russak, Michael A.

    1984-01-01

    A thin film compound semiconductor electrode comprising CdSe.sub.1-x Te.sub.x (0.ltoreq.x.ltoreq.1) is deposited on a transparent conductive substrate. An electrolyte contacts the film to form a photoactive site. The semiconductor material has a narrow energy bandgap permitting high efficiency for light conversion. The film may be fabricated by: (1) co-evaporation of two II-VI group compounds with a common cation, or (2) evaporation of three elements, concurrenty.

  7. Molecular Semiconductors: An Introduction

    NASA Astrophysics Data System (ADS)

    de Mello, John; Halls, Jonathan James Michael

    2005-10-01

    Introducing the fundamental ideas and concepts behind organic semiconductors, this book provides a clear impression of the broad range of research activities currently underway. Aimed specifically at new entrant doctoral students from a wide variety of backgrounds, including chemistry, physics, electrical engineering and materials science, it also represents an ideal companion text to undergraduate courses in organic semiconductors.

  8. Tube-like ternary α-Fe2O3@SnO2@Cu2O sandwich heterostructures: synthesis and enhanced photocatalytic properties.

    PubMed

    Tian, Qingyong; Wu, Wei; Sun, Lingling; Yang, Shuanglei; Lei, Mei; Zhou, Juan; Liu, Ying; Xiao, Xiangheng; Ren, Feng; Jiang, Changzhong; Roy, Vellaisamy A L

    2014-08-13

    Heterogeneous photocatalysis is of great interest for environmental remediation applications. However, fast recombination of photogenerated electron-hole pair and a low utilization rate of sunlight hinder the commercialization of currently available semiconductor photocatalysts. In this regard, we developed a unique ternary single core-double shell heterostructure that consists of α-Fe2O3@SnO2@Cu2O. This heterostructure exhibits a tube-like morphology possessing broad spectral response for the sunlight due to the combination of narrow bandgap and wide bandgap semiconductors forming a p-n heterojunction. To fabricate such a short nanotube (SNT), we used an anion-assisted hydrothermal route for deposition of α-Fe2O3, a seed-mediated deposition strategy for SnO2, and finally an aging process to deposit a Cu2O layer to complete the tube-like ternary α-Fe2O3@SnO2@Cu2O single core-double shell heterostructures. The morphology, composition, and photocatalytic properties of those ternary core-shell-shell heterostructures were characterized by various analytical techniques. These ternary heterostructures exhibited enhanced photocatalytic properties on the photodegradation of the organic dye of Rhodamine B (RhB) under simulated sunlight irradiation. The origin of enhanced photocatalytic activity is due to the synergistic effect of broad spectral response by combining narrow bandgap and wide bandgap semiconductors and, hence, an efficient charge separation of photogenerated electron-hole pairs facilitated through the p-n heterojunction. Furthermore, our unique structure provides an insight on the fabrication and controlled preparation of multilayer heterostructural photocatalysts that have intriguing properties.

  9. Electronic structure and electrical transport in ternary Al-Mg-B films prepared by magnetron sputtering

    SciTech Connect

    Yan, C.; Qian, J. C.; He, B.; Ng, T. W.; Zhang, W. J.; Bello, I.; Jha, S. K.; Zhou, Z. F.; Li, K. Y.; Klemberg-Sapieha, J. E.; Martinu, L.

    2013-03-25

    Nanostructured ternary Al-Mg-B films possess high hardness and corrosion resistance. In the present work, we study their electronic structure and electrical transport. The films exhibit semiconducting characteristics with an indirect optical-bandgap of 0.50 eV, as deduced from the Tauc plots, and a semiconductor behavior with a Fermi level of {approx}0.24 eV below the conduction band. Four-probe and Hall measurements indicated a high electrical conductivity and p-type carrier mobility, suggesting that the electrical transport is mainly due to hole conduction. Their electrical properties are explained in terms of the film nanocomposite microstructure consisting of an amorphous B-rich matrix containing AlMgB{sub 14} nanoparticles.

  10. Ternary compound electrode for lithium cells

    DOEpatents

    Raistrick, Ian D.; Godshall, Ned A.; Huggins, Robert A.

    1982-01-01

    Lithium-based cells are promising for applications such as electric vehicles and load-leveling for power plants since lithium is very electropositive and of light weight. One type of lithium-based cell utilizes a molten salt electrolyte and normally is operated in the temperature range of about 350.degree.-500.degree. C. Such high temperature operation accelerates corrosion problems. The present invention provides an electrochemical cell in which lithium is the electroactive species. The cell has a positive electrode which includes a ternary compound generally represented as Li-M-O, wherein M is a transition metal. Corrosion of the inventive cell is considerably reduced.

  11. Neutron Damage and MAX Phase Ternary Compounds

    SciTech Connect

    Barsoum, Michael; Hoffman, Elizabeth; Sindelar, Robert; Garcua-Duaz, Brenda; Kohse, Gordon

    2014-06-17

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  12. Ternary compound electrode for lithium cells

    DOEpatents

    Raistrick, I.D.; Godshall, N.A.; Huggins, R.A.

    1980-07-30

    Lithium-based cells are promising for applications such as electric vehicles and load-leveling for power plants since lithium is very electropositive and of light weight. One type of lithium-based cell utilizes a molten salt electrolyte and normally is operated in the temperature range of about 350 to 500/sup 0/C. Such high temperature operation accelerates corrosion problems. The present invention provides an electrochemical cell in which lithium is the electroactive species. The cell has a positive electrode which includes a ternary compound generally represented as Li-M-O, wherein M is a transition metal. Corrosion of the inventive cell is considerably reduced.

  13. Fabrication of Cu3Zn3Se ternary compounds by AP-MOCVD

    NASA Astrophysics Data System (ADS)

    Chen, Tsung-Ming; Lan, Shan-Ming; Uen, Wu-Yih; Yang, Tsun-Neng; Chang, Kuo-Jen; Shen, Chin-Chang; Hsu, Cheng-Fang; Jhao, Jian-Chang

    2013-10-01

    I-II-VI Ternary chalcopyrite semiconductors of Cu1-xZn1-ySe2-δ (Cu3Zn3Se) were successfully fabricated by the atmospheric pressure metal-organic chemical vapor deposition method for the first time. Four major peaks of (112), (220)/(204), (312)/(116), and (400), accompanied by three minor peaks of (103), (211) and (301) were observable in the X-ray diffraction spectra. In particular, the presence of those latter low-intensity peaks featured the formation of the chalcopyrite type Cu3Zn3Se compound. Typical absorption coefficients of the films produced were found to vary from 2.75×10 cm-1 to 5.75×10 cm-1 over all visible light range and from the same optical absorption spectra the energy gap of the material was extracted to be about 2.02 eV. Moreover, the photoluminescence measurement conducted at room temperature also exhibited a strong orange-colored emission line at 1.94 eV, which further confirmed that the Cu3Zn3Se ternary compound has been prepared. In addition, the cross-sectional and top-view scanning electron microscopy images characterized the fabricated Cu3Zn3Se compound as a polycrystalline film of thickness about 1-1.3 μm and consisting of 1-2.5 μm sized grains.

  14. Normal state properties of the ternary molybdenum sulfides

    NASA Technical Reports Server (NTRS)

    Woollam, J. A.; Alterovitz, S. A.

    1978-01-01

    By making a large number of normal state and superconducting properties measurements, all on the same ternary molybdenum sulfide samples, we obtain values for Fermi surface and superconducting parameters. From these we conclude that sputtered ternary molybdenum sulfides are not completely in the dirty superconductor limit, and that they are d-band metals with a high electron carrier density.

  15. Semiconductor Solar Superabsorbers

    PubMed Central

    Yu, Yiling; Huang, Lujun; Cao, Linyou

    2014-01-01

    Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials, for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques. PMID:24531211

  16. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  17. Semiconductor Nanocrystal Photonics

    DTIC Science & Technology

    2005-08-31

    D. Krauss, C. B. Poitras, and M. Lipson, " Energy transfer between colloidal semiconductor quantum dots in an optical microcavity," (submitted, 2006...Phys. Lett. 82, 4032 (2003). J. J. Peterson and T. D. Krauss, "Fluorescence Spectroscopy of Single Lead Sulfide Quantum Dots ," Nano Lett. (in press...Guo, Xiaowei Teng, Hong Yang, Todd D. Krauss, Carl B. Poitras, and Michal Lipson, "Enhanced Energy Transfer between Colloidal Semiconductor Quantum

  18. SILICON CARBIDE FOR SEMICONDUCTORS

    DTIC Science & Technology

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  19. Symmetric weak ternary quantum homomorphic encryption schemes

    NASA Astrophysics Data System (ADS)

    Wang, Yuqi; She, Kun; Luo, Qingbin; Yang, Fan; Zhao, Chao

    2016-03-01

    Based on a ternary quantum logic circuit, four symmetric weak ternary quantum homomorphic encryption (QHE) schemes were proposed. First, for a one-qutrit rotation gate, a QHE scheme was constructed. Second, in view of the synthesis of a general 3 × 3 unitary transformation, another one-qutrit QHE scheme was proposed. Third, according to the one-qutrit scheme, the two-qutrit QHE scheme about generalized controlled X (GCX(m,n)) gate was constructed and further generalized to the n-qutrit unitary matrix case. Finally, the security of these schemes was analyzed in two respects. It can be concluded that the attacker can correctly guess the encryption key with a maximum probability pk = 1/33n, thus it can better protect the privacy of users’ data. Moreover, these schemes can be well integrated into the future quantum remote server architecture, and thus the computational security of the users’ private quantum information can be well protected in a distributed computing environment.

  20. Equal area rule methods for ternary systems

    SciTech Connect

    Shyu, G.S.; Hanif, N.S.M.; Alvarado, J.F.J.; Hall, K.R.; Eubank, P.T.

    1995-12-01

    The phase equilibrium behavior of fluid mixtures is an important design consideration for both chemical processes and oil production. Eubank and Hall have recently shown the equal area rule (EAR) applies to the composition derivative of the Gibbs energy of a binary system at fixed pressure and temperature regardless of derivative continuity. A sufficient condition for equilibria, EAR is faster and simpler than either the familiar tangent-line method or the area method of Eubank et al. Here, the authors show that EAR can be extended to ternary systems exhibiting one, two, or three phases at equilibrium. A single directional vector is searched in composition space; at equilibrium, this vector is the familiar tie line. A sensitive criterion for equilibrium under EAR is equality of orthogonal derivatives such as ({partial_derivative}g/{partial_derivative}x{sub 1}){sub x{sub 2}P,T} at the end points ({alpha} and {beta}), where g {equivalent_to} ({Delta}{sub m}G/RT). Repeated use of the binary algorithm published in the first reference allows rapid, simple solution of ternary problems, even with hand-held calculations for cases where the background model is simple (e.g., activity coefficient models) and the derivative continuous.

  1. The ternary system cerium-rhodium-silicon

    SciTech Connect

    Lipatov, Alexey; Gribanov, Alexander; Grytsiv, Andriy; Safronov, Sergey; Rogl, Peter; Rousnyak, Julia; Seropegin, Yurii; Giester, Gerald

    2010-04-15

    Phase relations have been established in the ternary system Ce-Rh-Si for the isothermal section at 800 deg. C based on X-ray powder diffraction and EPMA on about 80 alloys, which were prepared by arc melting under argon or by powder reaction sintering. From the 25 ternary compounds observed at 800 deg. C 13 phases have been reported earlier. Based on XPD Rietveld refinements the crystal structures for 9 new ternary phases were assigned to known structure types. Structural chemistry of these compounds follows the characteristics already outlined for their prototype structures: tau{sub 7}-Ce{sub 3}RhSi{sub 3}, (Ba{sub 3}Al{sub 2}Ge{sub 2}-type), tau{sub 8}-Ce{sub 2}Rh{sub 3-x}Si{sub 3+x} (Ce{sub 2}Rh{sub 1.35}Ge{sub 4.65}-type), tau{sub 10}-Ce{sub 3}Rh{sub 4-x}Si{sub 4+x} (U{sub 3}Ni{sub 4}Si{sub 4}-type), tau{sub 11}-CeRh{sub 6}Si{sub 4} (LiCo{sub 6}P{sub 4}-type), tau{sub 13}-Ce{sub 6}Rh{sub 30}Si{sub 19.3} (U{sub 6}Co{sub 30}Si{sub 19}-type), tau{sub 18}-Ce{sub 4}Rh{sub 4}Si{sub 3} (Sm{sub 4}Pd{sub 4}Si{sub 3}-type), tau{sub 21}-CeRh{sub 2}Si (CeIr{sub 2}Si-type), tau{sub 22}-Ce{sub 2}Rh{sub 3+x}Si{sub 1-x} (Y{sub 2}Rh{sub 3}Ge-type) and tau{sub 24}-Ce{sub 8}(Rh{sub 1-x}Si{sub x}){sub 24}Si (Ce{sub 8}Pd{sub 24}Sb-type). For tau{sub 25}-Ce{sub 4}(Rh{sub 1-x}Si{sub x}){sub 12}Si a novel bcc structure was proposed from Rietveld analysis. Detailed crystal structure data were derived for tau{sub 3}-CeRhSi{sub 2} (CeNiSi{sub 2}-type) and tau{sub 6}-Ce{sub 2}Rh{sub 3}Si{sub 5} (U{sub 2}Co{sub 3}Si{sub 5}-type) by X-ray single crystal experiments, confirming the structure types. The crystal structures of tau{sub 4}-Ce{sub 22}Rh{sub 22}Si{sub 56}, tau{sub 5}-Ce{sub 20}Rh{sub 27}Si{sub 53} and tau{sub 23}-Ce{sub 33.3}Rh{sub 58.2-55.2}Si{sub 8.5-11.5} are unknown. High temperature compounds with compositions Ce{sub 10}Rh{sub 51}Si{sub 33} (U{sub 10}Co{sub 51}Si{sub 33}-type) and CeRhSi (LaIrSi-type) have been observed in as-cast alloys but these phases do not participate in

  2. The superconductivity of certain ternary molybdenum compounds

    NASA Technical Reports Server (NTRS)

    Odermatt, R.

    1978-01-01

    The objectives of this work were to measure the superconductivity and critical fields of (Cu1.5Mo4.5), (SmMo5S6), and (Pb0.9Mo5.1S6) in order to reproduce the published results, and by introduction of magnetic impurities into these semiconductors, observe the compensation effect.

  3. The ternary system cerium-rhodium-silicon

    NASA Astrophysics Data System (ADS)

    Lipatov, Alexey; Gribanov, Alexander; Grytsiv, Andriy; Safronov, Sergey; Rogl, Peter; Rousnyak, Julia; Seropegin, Yurii; Giester, Gerald

    2010-04-01

    Phase relations have been established in the ternary system Ce-Rh-Si for the isothermal section at 800 °C based on X-ray powder diffraction and EPMA on about 80 alloys, which were prepared by arc melting under argon or by powder reaction sintering. From the 25 ternary compounds observed at 800 °C 13 phases have been reported earlier. Based on XPD Rietveld refinements the crystal structures for 9 new ternary phases were assigned to known structure types. Structural chemistry of these compounds follows the characteristics already outlined for their prototype structures: τ7—Ce 3RhSi 3, (Ba 3Al 2Ge 2-type), τ8—Ce 2Rh 3-xSi 3+x (Ce 2Rh 1.35Ge 4.65-type), τ10—Ce 3Rh 4-xSi 4+x (U 3Ni 4Si 4-type), τ11—CeRh 6Si 4 (LiCo 6P 4-type), τ13—Ce 6Rh 30Si 19.3 (U 6Co 30Si 19-type), τ18—Ce 4Rh 4Si 3 (Sm 4Pd 4Si 3-type), τ21—CeRh 2Si (CeIr 2Si-type), τ22—Ce 2Rh 3+xSi 1-x (Y 2Rh 3Ge-type) and τ24—Ce 8(Rh 1-xSi x) 24Si (Ce 8Pd 24Sb-type). For τ25—Ce 4(Rh 1-xSi x) 12Si a novel bcc structure was proposed from Rietveld analysis. Detailed crystal structure data were derived for τ3—CeRhSi 2 (CeNiSi 2-type) and τ6—Ce 2Rh 3Si 5 (U 2Co 3Si 5-type) by X-ray single crystal experiments, confirming the structure types. The crystal structures of τ4—Ce 22Rh 22Si 56, τ5—Ce 20Rh 27Si 53 and τ23—Ce 33.3Rh 58.2-55.2Si 8.5-11.5 are unknown. High temperature compounds with compositions Ce 10Rh 51Si 33 (U 10Co 51Si 33-type) and CeRhSi (LaIrSi-type) have been observed in as-cast alloys but these phases do not participate in the phase equilibria at 800 °C.

  4. [Construction of Three-Dimensional Isobologram for Ternary Pollutant Mixtures].

    PubMed

    2015-12-01

    Tongji University, Shanghai 200092, China) Isobolographic analysis was widely used in the interaction assessment of binary mixtures. However, how to construct a three-dimensional (3D) isobologram for the assessment of toxicity interaction within ternary mixtures is still not reported up to date. The main purpose of this paper is to develop a 3D isobologram where the relative concentrations of three components are acted as three coordinate axes in 3D space to examine the toxicity interaction within ternary mixtures. Taking six commonly used pesticides in China, including three herbicides (2, 4-D, desmetryne and simetryn) and three insecticides ( dimethoate, imidacloprid and propoxur) as the mixture components, the uniform design ray procedure (UD-Ray) was used to rationally design the concentration composition of various components in the ternary mixtures so that effectively and comprehensively reflected the variety of actual environmental concentrations. The luminescent inhibition toxicities of single pesticides and their ternary mixtures to Vibrio fischeri at various concentration levels were determined by the microplate toxicity analysis. Selecting concentration addition (CA) as the addition reference, 3D isobolograms were constructed to study the toxicity interactions of various ternary mixtures. The results showed that the 3D isobologram could clearly and directly exhibit the toxicity interactions of ternary mixtures, and extend the use of isobolographic analysis into the ternary mixtures.

  5. Ternary compounds and isothermal section in Lu-Fe-Ga ternary system at 773 K

    NASA Astrophysics Data System (ADS)

    Liu, Fusheng; Ao, Weiqin; Pan, Laicai; Wang, Qibao; Yan, Jialing; Li, Junqin

    2013-06-01

    The isothermal section of the Lu-Fe-Ga ternary system at 773 K was investigated and constructed based on X-ray powder diffraction analysis. Thirteen binary compounds, Lu2Fe17, Lu6Fe23, LuFe2, LuGa3, LuGa2, Lu3Ga5, LuGa, Lu3Ga2, Lu5Ga3, Fe3Ga, Fe6Ga5, Fe3Ga4, FeGa3, nine ternary solid solutions, T1-LuFe2-1.43Ga0-0.57, T2-LuFe1.34-0.92Ga0.68-1.08, T3-LuFe0.52-0.26Ga1.48-1.74, T5-LuFe2.04-1.72Ga0.96-1.28, T6-Lu6Fe23-21.4Ga0-1.6, T7-Lu2Fe17-14.5Ga0-3.5, T8-Lu2Fe12.9-8.1Ga4.1-8.9, T9-LuFe6.8-5.5Ga5.2-6.5, T10-LuFe5.2-4.5Ga6.8-7.5, and two ternary compounds, T4-LuFe2.35Ga0.65 and T11-Lu2FeGa8 have been confirmed. The structures of the five new ternary compounds or solid solution T2, T3, T4, T5 and T8 are determined by Rietveld refinement method.

  6. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  7. A Three-dimensional Topological Model of Ternary Phase Diagram

    NASA Astrophysics Data System (ADS)

    Mu, Yingxue; Bao, Hong

    2017-01-01

    In order to obtain a visualization of the complex internal structure of ternary phase diagram, the paper realized a three-dimensional topology model of ternary phase diagram with the designed data structure and improved algorithm, under the guidance of relevant theories of computer graphics. The purpose of the model is mainly to analyze the relationship between each phase region of a ternary phase diagram. The model not only obtain isothermal section graph at any temperature, but also extract a particular phase region in which users are interested.

  8. Designing thin film materials — Ternary borides from first principles

    PubMed Central

    Euchner, H.; Mayrhofer, P.H.

    2015-01-01

    Exploiting the mechanisms responsible for the exceptional properties of aluminum based nitride coatings, we apply ab initio calculations to develop a recipe for designing functional thin film materials based on ternary diborides. The combination of binary diborides, preferring different structure types, results in supersaturated metastable ternary systems with potential for phase transformation induced effects. For the exemplary cases of MxW1 − xB2 (with M = Al, Ti, V) we show by detailed ab initio calculations that the respective ternary solid solutions are likely to be experimentally accessible by modern depositions techniques. PMID:26082562

  9. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOEpatents

    Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

  10. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOEpatents

    Anderson, Iver E.; Yost, Frederick G.; Smith, John F.; Miller, Chad M.; Terpstra, Robert L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).

  11. Influence of sulphide precursor on crystal phase of ternary I-III-VI2 semiconductors

    NASA Astrophysics Data System (ADS)

    Beloš, Milica V.; Abazović, Nadica D.; Jakovljević, Jadranka Kuljanin; Janković, Ivana; Ahrenkiel, Scott P.; Mitrić, Miodrag; Čomor, Mirjana I.

    2013-12-01

    Samples of AgInS2 and CuInS2 nanoparticles were synthesized by hot-injection method at 270 °C using 1-dodecanethiol (DT) and elemental sulphur (S) as sulphide precursors, and oleylamine as reaction medium and surfactant. Composition, crystal structure, and particle size of obtained materials were tracked by XRD and TEM/HRTEM measurements. It was shown that, due to its dual role as sulphur source and surfactant, DT drastically slows formation of desired material. Samples obtained with DT even after 4 h of reaction have traces of intermediary compound (β-In2S3), whereas in samples synthesized with elemental S these traces are less pronounced. The growth mechanism and influence of each reaction step are discussed in detail.

  12. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    Preliminary definition of all of the necessary materials, labor, services, and facilities necessary to provide science requirement definition, initiate hardware development activities, and provide an updated flight program proposal consistent with the NRA selection letter. The major tasks identified in this SOW are in the general category of science requirements determination, instrument definition, and updated flight program proposal. The Contractor shall define preliminary management, technical and integration requirements for the program, including improved cost/schedule estimates. The Contractor shall identify new technology requirements, define experiment accommodations and operational requirements and negotiate procurement of any long lead items, if required, with the government.

  13. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Cushman, Paula P.

    1997-01-01

    Preliminary definition of all of the necessary materials, labor, services, and facilities necessary to provide science requirement definition, initiate hardware development activities, and provide an update flight program proposal consistent with the NRA selection letter. The major tasks identified in this SOW are in the general category of science requirements determination, instrument definition, and updated flight program proposal. The Contractor shall define preliminary management, technical and integration requirements for the program, including improved cost/schedule estimates. The Contractor shall identify new technology requirements, define experiment accommodations and operational requirements and negotiate procurement of any long lead items, if required, with the government.

  14. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    NASA Technical Reports Server (NTRS)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  15. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  16. Quantum Transport in Semiconductors

    DTIC Science & Technology

    1991-10-01

    SRS i 91 4. TITLE AND SUBTITLE Quantum Transport in Semiconductors 5. FUNDING NUMBER söMtos-rizk-ooss 6. AUTHOR(S) D. K. Ferry ©fte ELECTE...OF ABSTRACT UL NSN 7540-01-280-5500 O 1 9 Standard Form 298 (Rev. 2-89) Presented by ANSI Std «9-18 298-102 Final Report Quantum Transport in... Quantum Transport in Semiconductor Devices This final report describes a program of research investigating quantum effects which become important in

  17. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  18. New unorthodox semiconductor devices

    NASA Astrophysics Data System (ADS)

    Board, K.

    1985-12-01

    A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

  19. Multinary wurtzite-type oxide semiconductors: present status and perspectives

    NASA Astrophysics Data System (ADS)

    Suzuki, Issei; Omata, Takahisa

    2017-01-01

    Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors—β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2—and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.

  20. The ternary system cerium-palladium-silicon

    SciTech Connect

    Lipatov, Alexey; Gribanov, Alexander; Grytsiv, Andriy; Rogl, Peter; Murashova, Elena; Seropegin, Yurii; Giester, Gerald; Kalmykov, Konstantin

    2009-09-15

    Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and tau{sub 13}-Ce{sub 3-x}Pd{sub 20+x}Si{sub 6} (0<=x<=1, Co{sub 20}Al{sub 3}B{sub 6}-type, Fm3-barm; a=1.21527(2) nm). The ternary compound Ce{sub 2}Pd{sub 3}Si{sub 3} (structure-type Ce{sub 2}Rh{sub 1.35}Ge{sub 4.65}, Pmmn; a=0.42040(1), b=0.42247(1), c=1.72444(3) nm) was detected as a high-temperature compound, however, does not participate in the equilibria at 800 deg. C. Phase equilibria in Ce-Pd-Si are characterized by the absence of cerium solubility in palladium silicides. Mutual solubility among cerium silicides and cerium-palladium compounds are significant whereby random substitution of the almost equally sized atom species palladium and silicon is reflected in extended homogeneous regions at constant Ce-content such as for tau{sub 2}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (AlB{sub 2}-derivative type), tau{sub 6}-Ce(Pd{sub x}Si{sub 1-x}){sub 2} (ThSi{sub 2}-type) and tau{sub 7}-CePd{sub 2-x}Si{sub 2+x}. The crystal structures of compounds tau{sub 4}-Ce{sub a}pprox{sub 8}Pd

  1. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  2. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  3. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  4. Structural evaluation of crystalline ternary γ-cyclodextrin complex.

    PubMed

    Higashi, Kenjirou; Ideura, Saori; Waraya, Haruka; Moribe, Kunikazu; Yamamoto, Keiji

    2011-01-01

    The structure of a crystalline γ-cyclodextrin (γ-CD) ternary complex containing salicylic acid (SA) and flurbiprofen (FBP) prepared by sealed heating was investigated. FBP/γ-CD inclusion complex was prepared by coprecipitation; its molar ratio was determined as 1/1. Powder X-ray diffraction measurements showed that the molecular packing of γ-CD changed from hexagonal to monoclinic columnar form by sealed heating of SA with dried FBP/γ-CD inclusion complex, indicating ternary complex formation. The stoichiometry of SA/FBP/γ-CD was estimated as 2/1/1. Solid-state transformation of γ-CD molecular packing upon water vapor adsorption and desorption was irreversible for this ternary complex, in contrast to the reversible transition for the FBP/γ-CD inclusion complex. The ternary complex contained one FBP molecule in the cavity of γ-CD and two SA molecules in the intermolecular space between neighboring γ-CD column stacks. Infrared and (13) C solid-state NMR spectroscopies revealed that the molecular states of SA and FBP changed upon ternary complex formation. In the complex, dimer FBP molecules were sandwiched between two γ-CD molecules whereas each monomer SA molecule was present in the intermolecular space of γ-CD. Ternary complex formation was also observed for other drug-guest systems using naproxen and ketoprofen. Thus, the complex can be used to formulate variety of drugs.

  5. Lunar granites with unique ternary feldspars

    NASA Technical Reports Server (NTRS)

    Ryder, G.; Stoeser, D. B.; Marvin, U. B.; Bower, J. F.

    1975-01-01

    An unusually high concentration of granitic fragments, with textures ranging from holocrystalline to glassy, occurs throughout Boulder 1, a complex breccia of highland rocks from Apollo 17, Station 2. Among the minerals included in the granites are enigmatic K-Ca-rich feldspars that fall in the forbidden region of the ternary diagram. The great variability in chemistry and texture is probably the result of impact degradation and melting of a granitic source-rock. Studies of the breccia matrix suggest that this original granitic source-rock may have contained more pyroxenes and phosphates than most of the present clasts contain. Petrographic observations on Apollo 15 KREEP basalts indicate that granitic liquids may be produced by differentiation without immiscibility, and the association of the granites with KREEP-rich fragments in the boulder suggests that the granites represent a residual liquid from the plutonic fractional crystallization of a KREEP-rich magma. Boulder 1 is unique among Apollo 17 samples in its silica-KREEP-rich composition. We conclude that the boulder represents a source-rock unlike the bedrock of South Massif.

  6. The optical spectrum of ternary alloy BBi1-xAsx

    NASA Astrophysics Data System (ADS)

    Yalcin, Battal G.; Aslan, M.; Ozcan, M. H.; Rahnamaye Aliabad, H. A.

    2016-06-01

    Among the III-V semiconductors, boron BBi and BAs as well as their alloys have attracted both scientific and technological interest in recent years. We present a calculation of the structural, electronic and optical properties of ternary alloy BBi1-xAsx by means of the WIEN2k software package. The exchange-correlation potential is treated by the generalized gradient approximation (GGA) within the schema of Wu and Cohen. Also, we have used the modified Becke-Johnson (mBJ) formalism to improve the band gap results. All the calculations have been performed after geometry optimization. In this study, we have investigated structural properties such as the lattice constant (a0), bulk modulus (B0) and its pressure derivative (B‧), and calculated the electronic band structures of the studied materials. Accurate calculation of linear optical properties, such as real (ɛ 1) and imaginary (ɛ 2) dielectric functions, reflectivity (R), electron energy loss spectrum, absorption coefficient (α), refractive index (n) and sum rule (Neff) are investigated. Our obtained results for studied binary compounds, BBi and BAs, fairly coincide with other theoretical calculations and experimental measurements. According to the best of our knowledge, no experimental or theoretical data are presently available for the studied ternary alloy BBi1-xAsx (0 < x < 1). The role of electronic band structure calculation with regards to the linear optical properties of BBi1-xAsx is discussed. The effect of the spin-orbit interaction (SOI) is also investigated and found to be quite small.

  7. Two-layer synchronized ternary quantum-dot cellular automata wire crossings.

    PubMed

    Bajec, Iztok Lebar; Pečar, Primož

    2012-04-16

    : Quantum-dot cellular automata are an interesting nanoscale computing paradigm. The introduction of the ternary quantum-dot cell enabled ternary computing, and with the recent development of a ternary functionally complete set of elementary logic primitives and the ternary memorizing cell design of complex processing structures is becoming feasible. The specific nature of the ternary quantum-dot cell makes wire crossings one of the most problematic areas of ternary quantum-dot cellular automata circuit design. We hereby present a two-layer wire crossing that uses a specific clocking scheme, which ensures the crossed wires have the same effective delay.

  8. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  9. Three dimensional strained semiconductors

    DOEpatents

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  10. Stretchable Organic Semiconductor Devices.

    PubMed

    Qian, Yan; Zhang, Xinwen; Xie, Linghai; Qi, Dianpeng; Chandran, Bevita K; Chen, Xiaodong; Huang, Wei

    2016-11-01

    Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most stretchable devices are currently based on inorganic electronics, whose high cost of fabrication and limited processing area make it difficult to produce inexpensive, large-area devices. Therefore, organic stretchable electronics are highly attractive due to many advantages over their inorganic counterparts, such as their light weight, flexibility, low cost and large-area solution-processing, the reproducible semiconductor resources, and the easy tuning of their properties via molecular tailoring. Among them, stretchable organic semiconductor devices have become a hot and fast-growing research field, in which great advances have been made in recent years. These fantastic advances are summarized here, focusing on stretchable organic field-effect transistors, light-emitting devices, solar cells, and memory devices.

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  12. Metal Contacts in Semiconductors.

    DTIC Science & Technology

    1983-11-01

    surfaces, Pnotoelectron spe troscopy, Auger electron spectro- I scopy, Schottky barriers, ohmic contacts, Defects in semiconductors, Cadmium * telluride...Indium phosphide, Gallium arsenide, Gallium Selenide . j 20. ABSTR ACT (roothat ow rees esh " neceay and td..ity by block -. b*w) SThe application of...angstroms. Also, provided one eliminates the systems where cadmium outdiffusion into high work function metals occurs then good agreement between the

  13. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  14. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  15. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  16. New Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Balestra, F.

    2008-11-01

    A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.

  17. Thin film reactions on alloy semiconductor substrates

    SciTech Connect

    Olson, D.A.

    1990-11-01

    The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

  18. Diffuse interface simulation of ternary fluids in contact with solid

    NASA Astrophysics Data System (ADS)

    Zhang, Chun-Yu; Ding, Hang; Gao, Peng; Wu, Yan-Ling

    2016-03-01

    In this article we developed a geometrical wetting condition for diffuse-interface simulation of ternary fluid flows with moving contact lines. The wettability of the substrate in the presence of ternary fluid flows is represented by multiple contact angles, corresponding to the different material properties between the respective fluid and the substrate. Displacement of ternary fluid flows on the substrate leads to the occurrence of moving contact point, at which three moving contact lines meet. We proposed a weighted contact angle model, to replace the jump in contact angle at the contact point by a relatively smooth transition of contact angle over a region of 'diffuse contact point' of finite size. Based on this model, we extended the geometrical formulation of wetting condition for two-phase flows with moving contact lines to ternary flows with moving contact lines. Combining this wetting condition, a Navier-Stokes solver and a ternary-fluid model, we simulated two-dimensional spreading of a compound droplet on a substrate, and validated the numerical results of the drop shape at equilibrium by comparing against the analytical solution. We also checked the convergence rate of the simulation by investigating the axisymmetric drop spreading in a capillary tube. Finally, we applied the model to a variety of applications of practical importance, including impact of a circular cylinder into a pool of two layers of different fluids and sliding of a three-dimensional compound droplet in shear flows.

  19. Zone leveling and solution growth of complex compound semiconductors in space

    NASA Technical Reports Server (NTRS)

    Bachmann, K. J.

    1986-01-01

    A research program on complex semiconducting compounds and alloys was completed that addressed the growth of single crystals of CdSe(y)Te(1-y), Zn(x)Cd(1-x)Te, Mn(x)Cd(1-x)Te, InP(y)As(1-y) and CuInSe2 and the measurement of fundamental physico-chemical properties characterizing the above materials. The purpose of this ground based research program was to lay the foundations for further research concerning the growth of complex ternary compound semiconductors in a microgravity environment.

  20. Tunable High Brightness Semiconductor Sources

    DTIC Science & Technology

    2015-05-01

    AFRL-RY-WP-TR-2015-0066 TUNABLE HIGH BRIGHTNESS SEMICONDUCTOR SOURCES Robert Bedford, Saima Husaini, Charles Reyner, and Tuoc Dang...3. DATES COVERED (From - To) May 2015 Final 5 November 2010 – 1 February 2015 4. TITLE AND SUBTITLE TUNABLE HIGH BRIGHTNESS SEMICONDUCTOR SOURCES 5a...included within the Tunable High Brightness Semiconductor Sources work unit includes several technology advancements. First, theoretical advances in mid

  1. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  2. Preparation of ternary Cd1- x Zn x S nanocrystals with tunable ultraviolet absorption by mechanical alloying

    NASA Astrophysics Data System (ADS)

    Zhang, Qi; Zhang, Huihui; Liu, Limin; Li, Shaohua; Murowchick, James B.; Wisner, Clarissa; Leventis, Nickolas; Peng, Zhonghua; Tan, Guolong

    2015-03-01

    Composition-tunable ternary Cd1- x Zn x S nanocrystals are among the most extensively studied alloyed semiconductor nanocrystals. However, they are almost exclusively prepared by wet chemical routes, which lead to surface-capped nanoparticles. Herein, we present a simple mechanical alloying process to prepare uncapped Zn1- x Cd x S nanocrystals throughout the entire composition range. The resulting nanocrystals have average sizes smaller than 9 nm, are chemically homogenous, and exhibit linear lattice parameter-composition and close-to-linear band-gap-composition relationships. Continuous lattice contraction of the Cd1- x Zn x S nanocrystals with the atomic Zn concentration results in a successional enlargement of their band gap energies expanding from the visible region to the ultraviolet (UV) region, demonstrating the ability for precise control of band gap engineering through composition tuning and mechanical alloying. [Figure not available: see fulltext.

  3. Enhanced Charge Separation in Ternary P3HT/PCBM/CuInS2 Nanocrystals Hybrid Solar Cells

    PubMed Central

    Lefrançois, Aurélie; Luszczynska, Beata; Pepin-Donat, Brigitte; Lombard, Christian; Bouthinon, Benjamin; Verilhac, Jean-Marie; Gromova, Marina; Faure-Vincent, Jérôme; Pouget, Stéphanie; Chandezon, Frédéric; Sadki, Saïd; Reiss, Peter

    2015-01-01

    Geminate recombination of bound polaron pairs at the donor/acceptor interface is one of the major loss mechanisms in organic bulk heterojunction solar cells. One way to overcome Coulomb attraction between opposite charge carriers and to achieve their full dissociation is the introduction of high dielectric permittivity materials such as nanoparticles of narrow band gap semiconductors. We selected CuInS2 nanocrystals of 7.4 nm size, which present intermediate energy levels with respect to poly(3-hexylthiophene) (P3HT) and Phenyl-C61-butyric acid methyl ester (PCBM). Efficient charge transfer from P3HT to nanocrystals takes place as evidenced by light-induced electron spin resonance. Charge transfer between nanocrystals and PCBM only occurs after replacing bulky dodecanethiol (DDT) surface ligands with shorter 1,2-ethylhexanethiol (EHT) ligands. Solar cells containing in the active layer a ternary blend of P3HT:PCBM:CuInS2-EHT nanocrystals in 1:1:0.5 mass ratio show strongly improved short circuit current density and a higher fill factor with respect to the P3HT:PCBM reference device. Complementary measurements of the absorption properties, external quantum efficiency and charge carrier mobility indicate that enhanced charge separation in the ternary blend is at the origin of the observed behavior. The same trend is observed for blends using the glassy polymer poly(triarylamine) (PTAA). PMID:25588811

  4. Enhanced Charge Separation in Ternary P3HT/PCBM/CuInS2 Nanocrystals Hybrid Solar Cells

    NASA Astrophysics Data System (ADS)

    Lefrançois, Aurélie; Luszczynska, Beata; Pepin-Donat, Brigitte; Lombard, Christian; Bouthinon, Benjamin; Verilhac, Jean-Marie; Gromova, Marina; Faure-Vincent, Jérôme; Pouget, Stéphanie; Chandezon, Frédéric; Sadki, Saïd; Reiss, Peter

    2015-01-01

    Geminate recombination of bound polaron pairs at the donor/acceptor interface is one of the major loss mechanisms in organic bulk heterojunction solar cells. One way to overcome Coulomb attraction between opposite charge carriers and to achieve their full dissociation is the introduction of high dielectric permittivity materials such as nanoparticles of narrow band gap semiconductors. We selected CuInS2 nanocrystals of 7.4 nm size, which present intermediate energy levels with respect to poly(3-hexylthiophene) (P3HT) and Phenyl-C61-butyric acid methyl ester (PCBM). Efficient charge transfer from P3HT to nanocrystals takes place as evidenced by light-induced electron spin resonance. Charge transfer between nanocrystals and PCBM only occurs after replacing bulky dodecanethiol (DDT) surface ligands with shorter 1,2-ethylhexanethiol (EHT) ligands. Solar cells containing in the active layer a ternary blend of P3HT:PCBM:CuInS2-EHT nanocrystals in 1:1:0.5 mass ratio show strongly improved short circuit current density and a higher fill factor with respect to the P3HT:PCBM reference device. Complementary measurements of the absorption properties, external quantum efficiency and charge carrier mobility indicate that enhanced charge separation in the ternary blend is at the origin of the observed behavior. The same trend is observed for blends using the glassy polymer poly(triarylamine) (PTAA).

  5. Bonds, bands, and band gaps in tetrahedrally bonded ternary compounds: The role of group V lone pairs

    NASA Astrophysics Data System (ADS)

    Do, Dat T.; Mahanti, S. D.

    2014-04-01

    An interesting class of tetrahedrally coordinated ternary compounds has attracted considerable interest because of their potential as good thermoelectrics. These compounds, denoted as I3-V-VI4, contain three monovalent-I (Cu, Ag), one nominally pentavalent-V (P, As, Sb, Bi), and four hexavalent-VI (S, Se, Te) atoms; and can be visualized as ternary derivatives of the II-VI zincblende or wurtzite semiconductors, obtained by starting from four unit cells of (II-VI) and replacing four type II atoms by three type I and one type V atoms. We find that nominally pentavalent-V atoms are effectively trivalent and their lone (ns2) pairs play an active role in opening up a gap. The lowest conduction band is a strongly hybridized anti-bonding combination of the lone pair and chalcogen (VI) p-states. The magnitude of the gap is sensitive to the nature of the exchange interaction (local vs non-local) and the V-VI distance. We also find that the electronic structure near the gap can be reproduced extremely well within a local theory if one can manipulate the position of the filled d bands of Cu and Ag by an effectively large U.

  6. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  7. Electrodes for Semiconductor Gas Sensors.

    PubMed

    Lee, Sung Pil

    2017-03-25

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode-semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode-semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect.

  8. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  9. Adiabatic pipelining: a key to ternary computing with quantum dots.

    PubMed

    Pečar, P; Ramšak, A; Zimic, N; Mraz, M; Lebar Bajec, I

    2008-12-10

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  10. Photoluminescence polarization anisotropy for studying long-range structural ordering within semiconductor multi-atomic alloys and organic crystals

    SciTech Connect

    Prutskij, T.; Percino, J.; Orlova, T.; Vavilova, L.

    2013-12-04

    Long-range structural ordering within multi-component semiconductor alloys and organic crystals leads to significant optical anisotropy and, in particular, to anisotropy of the photoluminescence (PL) emission. The PL emission of ternary and quaternary semiconductor alloys is polarized if there is some amount of the atomic ordering within the crystal structure. We analyze the polarization of the PL emission from the quaternary GaInAsP semiconductor alloy grown by Liquid Phase Epitaxy (LPE) and conclude that it could be caused by low degree atomic ordering within the crystal structure together with the thermal biaxial strain due to difference between the thermal expansion coefficients of the layer and the substrate. We also study the state of polarization of the PL from organic crystals in order to identify different features of the crystal PL spectrum.

  11. Application of quaternary phase diagrams to compound semiconductor processing. Progress report, April 1, 1988--December 31, 1988

    SciTech Connect

    Schwartzman, A.

    1988-12-31

    This paper considers the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Examples, listed in a table, include semiconductor/insulator/semiconductor (SIS) layered structures, II-VI/II-VI and III-V/II-VI epitaxial heterojunctions and oxidation of ternary compounds. Solid solubility is taken into account for quaternary phase diagrams of semiconductor systems. Using free energies of formation, a method to calculate the quaternary phase diagrams was developed. The Ga-As-II-VI and Cd-Te-Zn-O phase diagrams are reviewed as examples of quaternary phase diagrams without and with solid solubility.

  12. Electron probe microanalysis in the ternary Gd B C system

    NASA Astrophysics Data System (ADS)

    Ruiz, Domingo; Garland, Maria Teresa; Saillard, Jean-Yves; Halet, Jean-François; Bohn, Marcel; Bauer, Josef

    2002-09-01

    EPMA exploration of the Gd-B-C system in the region "Gd-GdB 2-GdBC" and in the neighborhood of the recently described Gd 4B 3C 4 compound led to the identification of 9 new ternary phases, which allows to clear up the phase diagram of this ternary system. A structural description of the bonding between the non-metal atoms in most of the identified compounds is proposed, on the basis of simple electron counting rules and using the planar repeat units or the finite linear anions which have been shown to exist in the structurally characterized rare-earth borocarbide compounds.

  13. Diffusion Research in BCC Ti-Al-Mo Ternary Alloys

    NASA Astrophysics Data System (ADS)

    Chen, Yi; Tang, Bin; Xu, Guanglong; Wang, Chuanyun; Kou, Hongchao; Li, Jinshan; Cui, Yuwen

    2014-04-01

    Interdiffusion in Ti-Al-Mo β solid solution was investigated at 1523 K (1250 °C) by analyzing diffusion couples. From the concentration profiles analytically represented by error function expansion (ERFEX), the ternary interdiffusion coefficients and impurity diffusivity were extracted by the Whittle-Green and generalized Hall methods. A comparison of the diffusion in five Ti-Al-X (Co, Cr, Fe, Mo, and V) ternaries reveals Ti-Al-Mo is comparably like Ti-Al-(Cr, V) while Ti-Al-(Co, Fe) are predominantly of interstitial nature.

  14. Liquid-liquid equilibria for ternary polymer mixtures

    NASA Astrophysics Data System (ADS)

    Oh, Suk Yung; Bae, Young Chan

    2011-01-01

    A molecular thermodynamic model for multicomponent systems based on a closed-packed lattice model is presented based on two contributions; entropy and energy contribution. The calculated liquid-liquid equilibria of ternary chainlike mixtures agreed with Monte Carlo simulation results. The proposed model can satisfactorily predict Types 0, 1, 2 and 3 phase separations of the Treybal classification. The model parameters obtained from the binary systems were used to directly predict real ternary systems and the calculated results correlated well with experimental data using few adjustable parameters. Specific interactions in associated binary systems were considered using a secondary lattice.

  15. Ternary jitter-based true random number generator

    NASA Astrophysics Data System (ADS)

    Latypov, Rustam; Stolov, Evgeni

    2017-01-01

    In this paper a novel family of generators producing true uniform random numbers in ternary logic is presented. The generator consists of a number of identical ternary logic combinational units connected into a ring. All the units are provided to have a random delay time, and this time is supposed to be distributed in accordance with an exponential distribution. All delays are supposed to be independent events. The theory of the generator is based on Erlang equations. The generator can be used for test production in various systems. Features of multidimensional random vectors, produced by the generator, are discussed.

  16. Enabling iron pyrite (FeS2) and related ternary pyrite compounds for high-performance solar energy applications

    NASA Astrophysics Data System (ADS)

    Caban Acevedo, Miguel

    The success of solar energy technologies depends not only on highly efficient solar-to-electrical energy conversion, charge storage or chemical fuel production, but also on dramatically reduced cost, to meet the future terawatt energy challenges we face. The enormous scale involved in the development of impactful solar energy technologies demand abundant and inexpensive materials, as well as energy-efficient and cost-effective processes. As a result, the investigation of semiconductor, catalyst and electrode materials made of earth-abundant and sustainable elements may prove to be of significant importance for the long-term adaptation of solar energy technologies on a larger scale. Among earth-abundant semiconductors, iron pyrite (cubic FeS2) has been considered the most promising solar energy absorber with the potential to achieve terawatt energy-scale deployment. Despite extensive synthetic progress and device efforts, the solar conversion efficiency of iron pyrite has remained below 3% since the 1990s, primarily due to a low open circuit voltage (V oc). The low photovoltage (Voc) of iron pyrite has puzzled scientists for decades and limited the development of cost-effective solar energy technologies based on this otherwise promising semiconductor. Here I report a comprehensive investigation of the syntheses and properties of iron pyrite materials, which reveals that the Voc of iron pyrite is limited by the ionization of a high density of intrinsic bulk defect states despite high density surface states and strong surface Fermi level pinning. Contrary to popular belief, bulk defects most-likely caused by intrinsic sulfur vacancies in iron pyrite must be controlled in order to enable this earth-abundant semiconductor for cost-effective and sustainable solar energy conversion. Lastly, the investigation of iron pyrite presented here lead to the discovery of ternary pyrite-type cobalt phosphosulfide (CoPS) as a highly-efficient earth-abundant catalyst material for

  17. Nanoscale Semiconductor Electronics

    DTIC Science & Technology

    2015-02-25

    MONITOR’S REPORT Kirtland AFB, NM 87117-5776 NUMBER(S) AFRL -RV-PS-TR-2014-0202 12. DISTRIBUTION / AVAILABILITY STATEMENT Approved for public release...Kingman Rd, Suite 0944 Ft Belvoir, VA 22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSE/Jesse Mee 1 cy ... AFRL -RV-PS- AFRL -RV-PS- TR-2014-0202 TR-2014-0202 NANOSCALE SEMICONDUCTOR ELECTRONICS Steven R. J. Brueck and Ganesh Balakrishnan University of New

  18. Electrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  19. Semiconductor cooling apparatus

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A. (Inventor); Gaier, James R. (Inventor)

    1993-01-01

    Gas derived graphite fibers generated by the decomposition of an organic gas are joined with a suitable binder. This produces a high thermal conductivity composite material which passively conducts heat from a source, such as a semiconductor, to a heat sink. The fibers may be intercalated. The intercalate can be halogen or halide salt, alkaline metal, or any other species which contributes to the electrical conductivity improvement of the graphite fiber. The fibers are bundled and joined with a suitable binder to form a high thermal conductivity composite material device. The heat transfer device may also be made of intercalated highly oriented pyrolytic graphite and machined, rather than made of fibers.

  20. Microwave semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sitch, J. E.

    1985-03-01

    The state of the art of microwave semiconductor design is reviewed, with emphasis on developments of the past 10-12 years. Consideration is given to: varistor diodes; varactor diodes; and transit time negative diodes. The design principles of bipolar and unipolar transistors are discussed, with reference to power FETs, traveling-wave FETs, and camel or planar-doped barrier transistors. Recent innovations in the field of fabrication technology are also considered, including: crystal growth; doping; and packaging. Several schematic drawings and photographs of the different devices are provided.

  1. Semiconductor Terahertz Technology

    DTIC Science & Technology

    2009-06-15

    COVERED (From - To) 15-June-2009 Final Report 12 Apr 07 - 15 Apr 09 4. TITLE AND SUBTITLE Sa. CONTRACT NUMBER FA8718-07-C-0030 Semiconductor Terahertz ...and the other for the phononic waveguides. 15. SUBJECT TERMS Quantum cascade laser, gennanium, gennanium-tin, terahertz 16. SECURITY CLASStFICATION OF...7 Figure 7 lllustration of a GaAs-based active region waveguide with either Ga or Au as cladding operating in the Restrahlen band of GaN . 10 Figure 8

  2. Chemically Derivatized Semiconductor Photoelectrodes.

    DTIC Science & Technology

    1982-01-04

    as Si, Ge, and GaAs derivatized with reagents based on ferrocene such as those represented by I and II. Work with p-type semiconductor photoelectrode...Concerning n-type Si it was found that EtOH/0.1 M En-Bu4N)C104 solutions containing A = ferrocene and A+ = ferri-- cinium result in a constant output of...electrical energy from an illuminated photoelectrochemical device configured as in Scheme II.(20) The ferrocene captures the photogenerated h+ at a rate -4

  3. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  4. Power semiconductor controlled drives

    NASA Astrophysics Data System (ADS)

    Dubey, Gopal K.

    This book presents power semiconductor controlled drives employing dc motors, induction motors, and synchronous motors. The dynamics of motor and load systems are covered. Open-loop and closed-loop drives are considered, and thyristor, power transistor, and GTO converters are discussed. In-depth coverage is given to ac drives, particularly those fed by voltage and current source inverters and cycloconverters. Full coverage is given to brushless and commutatorless dc drives, including load-commuted synchronous motor drives. Rectifier-controlled dc drives are presented in detail.

  5. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  6. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  7. Plasmonic Nanospectroscopy for Thermal Analysis of Organic Semiconductor Thin Films.

    PubMed

    Nugroho, Ferry A A; Diaz de Zerio Mendaza, Amaia; Lindqvist, Camilla; Antosiewicz, Tomasz J; Müller, Christian; Langhammer, Christoph

    2017-02-21

    Organic semiconductors are key materials for the next generation thin film electronic devices like field-effect transistors, light-emitting diodes, and solar cells. Accurate thermal analysis is essential for the fundamental understanding of these materials, for device design, stability studies, and quality control because the desired nanostructures are often far from thermodynamic equilibrium and therefore tend to evolve with time and temperature. However, classical experimental techniques are insufficient because the active layer of most organoelectronic device architectures is typically only on the order of a hundred nanometers or less. Scrutinizing the thermal properties in this size range is, however, critical because strong deviations of the thermal properties from bulk values due to confinement effects and pronounced influence of the substrate become significant. Here, we introduce plasmonic nanospectroscopy as an experimental approach to scrutinize the thickness dependence of the thermal stability of semicrystalline, liquid-crystalline, and glassy organic semiconductor thin films down to the sub-100 nm film thickness regime. In summary, we find a pronounced thickness dependence of the glass transition temperature of ternary polymer/fullerene blend thin films and their constituents, which can be resolved with exceptional precision by the plasmonic nanospectroscopy method, which relies on remarkably simple instrumentation.

  8. Synthesis and characterization of TiO 2/Ag/polymer ternary nanoparticles via surface-initiated atom transfer radical polymerization

    NASA Astrophysics Data System (ADS)

    Park, Jung Tae; Koh, Joo Hwan; Seo, Jin Ah; Cho, Yong Soo; Kim, Jong Hak

    2011-08-01

    We report on the novel ternary hybrid materials consisting of semiconductor (TiO 2), metal (Ag) and polymer (poly(oxyethylene methacrylate) (POEM)). First, a hydrophilic polymer, i.e. POEM, was grafted from TiO 2 nanoparticles via the surface-initiated atom transfer radical polymerization (ATRP) technique. These TiO 2-POEM brush nanoparticles were used to template the formation of Ag nanoparticles by introduction of a AgCF 3SO 3 precursor and a NaBH 4 aqueous solution for reduction process. Successful grafting of polymeric chains from the surface of TiO 2 nanoparticles and the in situ formation of Ag nanoparticles within the polymeric chains were confirmed using transmission electron microscopy (TEM), UV-vis spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). FT-IR spectroscopy also revealed the specific interaction of Ag nanoparticles with the C dbnd O groups of POEM brushes. This study presents a simple route for the in situ synthesis of both metal and polymer confined within the semiconductor, producing ternary hybrid inorganic-organic nanomaterials.

  9. Growth Mechanism of Nanowires: Ternary Chalcogenides

    NASA Technical Reports Server (NTRS)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  10. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  11. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  12. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  13. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  14. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  15. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  16. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  17. Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys

    PubMed Central

    De Leonardis, Francesco; Troia, Benedetto; Soref, Richard A.; Passaro, Vittorio M. N.

    2016-01-01

    Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS-compatible techniques to realize lasers, LED, and photodetectors. The wide Si, Ge and Sn transparencies allow the use of binary and ternary alloys extended to mid-IR wavelengths, where nonlinearities can also be employed. However, neither theoretical or experimental predictions of nonlinear features in SiGeSn alloys are reported in the literature. For the first time, a rigorous and detailed physical investigation is presented to estimate the two photon absorption (TPA) coefficient and the Kerr refractive index for the SiGeSn alloy up to 12 μm. The TPA spectrum, the effective TPA wavelength cut-off, and the Kerr nonlinear refractive index have been determined as a function of alloy compositions. The promising results achieved can pave the way to the demonstration of on-chip nonlinear-based applications, including mid-IR spectrometer-on-a-chip, all-optical wavelength down/up-conversion, frequency comb generation, quantum-correlated photon-pair source generation and supercontinuum source creation, as well as Raman lasing. PMID:27622979

  18. Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys

    NASA Astrophysics Data System (ADS)

    de Leonardis, Francesco; Troia, Benedetto; Soref, Richard A.; Passaro, Vittorio M. N.

    2016-09-01

    Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS-compatible techniques to realize lasers, LED, and photodetectors. The wide Si, Ge and Sn transparencies allow the use of binary and ternary alloys extended to mid-IR wavelengths, where nonlinearities can also be employed. However, neither theoretical or experimental predictions of nonlinear features in SiGeSn alloys are reported in the literature. For the first time, a rigorous and detailed physical investigation is presented to estimate the two photon absorption (TPA) coefficient and the Kerr refractive index for the SiGeSn alloy up to 12 μm. The TPA spectrum, the effective TPA wavelength cut-off, and the Kerr nonlinear refractive index have been determined as a function of alloy compositions. The promising results achieved can pave the way to the demonstration of on-chip nonlinear-based applications, including mid-IR spectrometer-on-a-chip, all-optical wavelength down/up-conversion, frequency comb generation, quantum-correlated photon-pair source generation and supercontinuum source creation, as well as Raman lasing.

  19. Stoichiometry determined exchange interactions in amorphous ternary transition metal oxides: Theory and experiment

    SciTech Connect

    Hu, Shu-jun; Yan, Shi-shen Zhang, Yun-peng; Zhao, Ming-wen; Kang, Shi-shou; Mei, Liang-mo

    2014-07-28

    Amorphous transition metal oxides exhibit exotic transport and magnetic properties, while the absence of periodic structure has long been a major obstacle for the understanding of their electronic structure and exchange interaction. In this paper, we have formulated a theoretical approach, which combines the melt-quench approach and the spin dynamic Monte-Carlo simulations, and based on it, we explored amorphous Co{sub 0.5}Zn{sub 0.5}O{sub 1−y} ternary transition metal oxides. Our theoretical results reveal that the microstructure, the magnetic properties, and the exchange interactions of Co{sub 0.5}Zn{sub 0.5}O{sub 1−y} are strongly determined by the oxygen stoichiometry. In the oxygen-deficient sample (y > 0), we have observed the long-range ferromagnetic spin ordering which is associated with the non-stoichiometric cobalt-rich region rather than metallic clusters. On the other hand, the microstructure of stoichiometric sample takes the form of continuous random networks, and no long-range ferromagnetism has been observed in it. Magnetization characterization of experimental synthesized Co{sub 0.61}Zn{sub 0.39}O{sub 1−y} films verifies the relation between the spin ordering and the oxygen stoichiometry. Furthermore, the temperature dependence of electrical transport shows a typical feature of semiconductors, in agreement with our theoretical results.

  20. Ternary Self-Assembly of Ordered Metal Oxide-Graphene Nanocomposites for Electrochemical Energy Storage

    SciTech Connect

    Wang, Donghai; Kou, Rong; Choi, Daiwon; Yang, Zhenguo; Nie, Zimin; Li, Juan; Saraf, Laxmikant V.; Hu, Dehong; Zhang, Jiguang; Graff, Gordon L.; Liu, Jun; Pope, Michael A.; Aksay, Ilhan A.

    2010-02-25

    Surfactant or polymer directed self-assembly has been widely investigated to prepare nanostructured metal oxides, semiconductors and polymers, but this approach is mostly limited to two-phase materials, organic/inorganic hybrids, and nanoparticle or polymer-based nanocomposites. Self-assembled nanostructures from more complex, multiscale and multiphase building blocks have been explored with limited success. Here, we demonstrate a ternary self-assembly approach using graphene as fundamental building blocks to construct metal oxide-graphene nanocomposites. A new class of layered nanocomposites is formed containing stable, ordered alternating layers of nanocrystalline metal oxides with graphene/graphene stacks. Alternatively, the graphene material can be incorporated into liquid-crystal-templated nanoporous structures to form high surface area, conductive networks. The self-assembly method can be also used to fabricate free standing, flexible metal oxide-graphene nanocomposite films and electrodes. We investigate the Li-ion insertion properties of the self-assembled electrodes for energy storage and show that the SnO2-graphene nanocomposite films can achieve near theoretical specific energy density without a significant charge/discharge degradation.

  1. Using Nuclear Magnetic Resonance Spectroscopy for Measuring Ternary Phase Diagrams

    ERIC Educational Resources Information Center

    Woodworth, Jennifer K.; Terrance, Jacob C.; Hoffmann, Markus M.

    2006-01-01

    A laboratory experiment is presented for the upper-level undergraduate physical chemistry curriculum in which the ternary phase diagram of water, 1-propanol and n-heptane is measured using proton nuclear magnetic resonance (NMR) spectroscopy. The experiment builds upon basic concepts of NMR spectral analysis, typically taught in the undergraduate…

  2. Ternary diffusion path in terms of eigenvalues and eigenvectors

    NASA Astrophysics Data System (ADS)

    Ram-Mohan, L. R.; Dayananda, Mysore A.

    2016-04-01

    Based on the transfer matrix methodology, a new analysis is presented for the description of slopes of the ternary diffusion path for a solid-solid diffusion couple. Concentration profiles and diffusion paths for isothermal, ternary diffusion couples are examined in the context of eigenvalues and eigenvectors obtained from the diagonalisation of the ? ternary interdiffusion coefficients employed for their representation. New relations are derived relating the decoupled interdiffusion fluxes to combinations of concentration gradients through the major and minor eigenvalues, and the diffusion path becomes parallel to the major eigenvector at each path end. General expressions for the slope of the ternary diffusion path at any section of the couple are also derived in terms of eigenvalue and eigenvector parameters. Expressions for the path slope at the Matano plane involve only concentrations, major and minor eigenvalues and eigenvector parameters. New constraints relating the eigenvalues and the concentration gradients of the individual components are also presented at selected sections, where the diffusion path is parallel to the straight line joining the terminal composition points on an isotherm. Applications of the various relations are illustrated with the aid of a hypothetical couple and an experimental Cu-Ni-Zn diffusion couple.

  3. A Simple Refraction Experiment for Probing Diffusion in Ternary Mixtures

    ERIC Educational Resources Information Center

    Coutinho, Cecil A.; Mankidy, Bijith D.; Gupta, Vinay K.

    2010-01-01

    Diffusion is a fundamental phenomenon that is vital in many chemical processes such as mass transport in living cells, corrosion, and separations. We describe a simple undergraduate-level experiment based on Weiner's Method to probe diffusion in a ternary aqueous mixture of small molecular-weight molecules. As an illustration, the experiment…

  4. Making Ternary Quantum Dots From Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila; Banger, Kulbinder; Castro, Stephanie; Hepp, Aloysius

    2007-01-01

    A process has been devised for making ternary (specifically, CuInS2) nanocrystals for use as quantum dots (QDs) in a contemplated next generation of high-efficiency solar photovoltaic cells. The process parameters can be chosen to tailor the sizes (and, thus, the absorption and emission spectra) of the QDs.

  5. Interdiffusion in Ternary Magnesium Solid Solutions of Aluminum and Zinc

    DOE PAGES

    Kammerer, Catherine; Kulkarni, Nagraj S; Warmack, Robert J Bruce; ...

    2016-01-11

    Al and Zn are two of the most common alloying elements in commercial Mg alloys, which can improve the physical properties through solid solution strengthening and precipitation hardening. Diffusion plays a key role in the kinetics of these and other microstructural design relevant to Mg-alloy development. However, there is a lack of multicomponent diffusion data available for Mg alloys. Through solid-to-solid diffusion couples, diffusional interactions of Al and Zn in ternary Mg solid-solution at 400° and 450 °C were examined by an extension of the Boltzmann-Matano analysis based on Onsager s formalism. Concentration profiles of Mg-Al-Zn ternary alloys were determinedmore » by electron probe microanalysis, and analyzed to determine the ternary interdiffusion coefficients as a function of composition. Zn was determined to interdiffuse the fastest, followed by Mg and Al. Appreciable diffusional interactions among Mg, Al, and Zn were observed by variations in sign and magnitude of cross interdiffusion coefficients. In particular, Zn was found to significantly influence the interdiffusion of Mg and Al significantly: the and ternary cross interdiffusion coefficients were both negative, and large in magnitude, in comparison to and , respectively. Al and Mg were observed influence the interdiffusion of Mg and Al, respectively, with positive and interdiffusion coefficients, but their influence on the Zn interdiffusion was negligible.« less

  6. Interdiffusion in Ternary Magnesium Solid Solutions of Aluminum and Zinc

    SciTech Connect

    Kammerer, Catherine; Kulkarni, Nagraj S; Warmack, Robert J Bruce; Sohn, Yong Ho

    2016-01-11

    Al and Zn are two of the most common alloying elements in commercial Mg alloys, which can improve the physical properties through solid solution strengthening and precipitation hardening. Diffusion plays a key role in the kinetics of these and other microstructural design relevant to Mg-alloy development. However, there is a lack of multicomponent diffusion data available for Mg alloys. Through solid-to-solid diffusion couples, diffusional interactions of Al and Zn in ternary Mg solid-solution at 400° and 450 °C were examined by an extension of the Boltzmann-Matano analysis based on Onsager s formalism. Concentration profiles of Mg-Al-Zn ternary alloys were determined by electron probe microanalysis, and analyzed to determine the ternary interdiffusion coefficients as a function of composition. Zn was determined to interdiffuse the fastest, followed by Mg and Al. Appreciable diffusional interactions among Mg, Al, and Zn were observed by variations in sign and magnitude of cross interdiffusion coefficients. In particular, Zn was found to significantly influence the interdiffusion of Mg and Al significantly: the and ternary cross interdiffusion coefficients were both negative, and large in magnitude, in comparison to and , respectively. Al and Mg were observed influence the interdiffusion of Mg and Al, respectively, with positive and interdiffusion coefficients, but their influence on the Zn interdiffusion was negligible.

  7. Spectroscopic characterization of Fe2+-doped II-VI ternary and quaternary mid-IR laser active powders

    NASA Astrophysics Data System (ADS)

    Martinez, A.; Martyshkin, D. V.; Fedorov, V. V.; Mirov, S. B.

    2014-02-01

    We report on spectroscopic characterization of laser active powders based on iron doped II-VI ternary and quaternary semiconductors for mid-IR laser applications. Iron doped Cd1-x MnxTe, Cd1-x MnxS, Cd1-xMnxSe, Cd0.5Mn0.5S0.5Se0.5 , Cd1-xZnxTe compounds with x=0.5-0.25, were prepared by using thermo diffusion technique. The starting binary powders were mixed in the appropriate molar ratios, sealed in evacuated (10-3 Torr) quartz ampoules, and annealed at 800-1000oC for several days. Samples composition, integrity, and grain size were characterized by micro-Raman and Xray diffraction and revealed a variation of the crystal field parameters depending on powder composition. Fe2+ photoluminescence was characterized by spectral band position (normalized with respect to the detection platform spectral sensitivity) and lifetime at different temperatures, enabling calculation of the absorption and emission crosssections. Practical utility of the developed powders was demonstrated by a room temperature random lasing of iron doped Cd0.5Zn0.5Te powders over 5620-6020 nm spectral range pumped by a 2.94 μm radiation of a Q-switched Er:YAG laser. In summary, the following has been accomplished: (1) It was demonstrated that laser active Fe2+ doped ternary and quaternary II-VI materials can be produced by simple annealing of the commercially available binary powders omitting expensive and complicated crystal growth processes; (2) It is possible to effectively shift PL of Fe2+ in II-VI host materials towards shorter or longer wavelength by varying composition, type and amount of the second cation in ternary II-VI materials; (3) Major spectroscopic characteristics of Fe2+ doped II-VI ternary and quaternary compounds were obtained and their practical utility for mid-IR lasing demonstrated.

  8. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  9. Photocatalysis Using Semiconductor Nanoclusters

    SciTech Connect

    Thurston, T.R.; Wilcoxon,J.P.

    1999-01-21

    We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

  10. Semiconductor adiabatic qubits

    DOEpatents

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib

    2016-12-27

    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  11. Semiconductor radiation detector

    DOEpatents

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  12. A Solution‐Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    PubMed Central

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gómez, Andrés; Primetzhofer, Daniel; Amassian, Aram; Campoy‐Quiles, Mariano

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution‐doped conjugated polymer poly(3‐hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer‐thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free‐standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends. PMID:28105396

  13. Band engineered ternary solid solution CdSxSe1-x-sensitized mesoscopic TiO2 solar cells.

    PubMed

    Hossain, Md Anower; Jennings, James Robert; Mathews, Nripan; Wang, Qing

    2012-05-21

    The optical band gap of the light absorber and the alignment of its bands with the underlying wide band gap metal oxide are critical for efficient light harvesting and charge separation in semiconductor-sensitized solar cells (SSCs). In practice, these two requirements are however not always fulfilled concomitantly in SSCs. Favourable band alignment in CdSe-sensitized TiO2 requires utilization of quantum sized CdSe, which causes great losses in the harvesting of long wavelength photons due to quantum confinement effects. In the present study, ternary cadmium sulfoselenide (CdSxSe1-x), which has a tunable band gap between those of CdSe and CdS without reducing the dimension, was proposed as a sensitizer for TiO2. CdSxSe1-x was successfully synthesized by alternately depositing CdS and CdSe layers under ambient conditions. SSCs utilizing CdSxSe1-x-sensitized TiO2 yielded a power conversion efficiency of 4.05% under simulated AM1.5 100 mW cm(-2) illumination, rivalling the well-studied cascaded CdS/CdSe electrodes when an aqueous polysulfide solution was used as the electrolyte and Cu2S as the counter electrode. The findings of the present study provide an alternative and viable approach for optimizing the energetics of semiconductor sensitizers for efficient charge separation, while also maintaining good light harvesting.

  14. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    NASA Astrophysics Data System (ADS)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

    2016-12-01

    A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  15. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

    PubMed Central

    Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

    2016-01-01

    Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

  16. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  17. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  18. State of the art in semiconductor detectors

    SciTech Connect

    Rehak, P. ); Gatti, E. )

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs.

  19. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  20. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  1. Signal processing for semiconductor detectors

    SciTech Connect

    Goulding, F.S.; Landis, D.A.

    1982-02-01

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.

  2. Optical properties of semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Son, Joong-Kon

    Thanks to the difference in energy gap between two semiconductors and to their different indices of refraction, semiconductor heterostructures can confine electrons as well as photons. This property makes it possible to build semiconductor-based optical resonators (microcavities) with a radiation dipole (a quantum well) in its midst to investigate the coupling between the optical modes of the microcavity with the exciton modes of the quantum well. Such an interaction, besides its intrinsic interest, is relevant to vertically-emitting semiconductor lasers, based on the quantum well- microcavity system. In this thesis, we will present experimental evidence of temperature and electric-field dependent exciton-cavity coupling in GaAs-GaAlAs microcavities.

  3. Dye Sensitization of Semiconductor Particles

    SciTech Connect

    Hartland, G. V.

    2003-01-13

    In this project electron transfer at semiconductor liquid interfaces was examined by ultrafast time-resolved and steady-state optical techniques. The experiments primarily yielded information about the electron transfer from titanium dioxide semiconductor particles to absorbed molecules. The results show that the rate of electron transfer depends on the structure of the molecule, and the crystalline phase of the particle. These results can be qualitatively explained by Marcus theory for electron transfer.

  4. Semiconductor crystal high resolution imager

    NASA Technical Reports Server (NTRS)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  5. Laser Assisted Semiconductor Device Processing

    DTIC Science & Technology

    1980-11-30

    In strongly absorbing semiconductors, the dominant absorption mechanism at frequencies higher than the bandgap frequency is interband transitions. The...current). The solution for miconductors. In strongly absorbing semiconductors, the n(x,t ) is a closed-form expression consisting of complemen- dominant 0...representative profles are shown in Fis. $-12. o -- For Nd: YAG in silicon. E, _0.99hv and the profiks are therefore and-gap recombination dominated

  6. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  7. Impurity gettering in semiconductors

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  8. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  9. Ternary structure reveals mechanism of a membrane diacylglycerol kinase

    SciTech Connect

    Li, Dianfan; Stansfeld, Phillip J.; Sansom, Mark S. P.; Keogh, Aaron; Vogeley, Lutz; Howe, Nicole; Lyons, Joseph A.; Aragao, David; Fromme, Petra; Fromme, Raimund; Basu, Shibom; Grotjohann, Ingo; Kupitz, Christopher; Rendek, Kimberley; Weierstall, Uwe; Zatsepin, Nadia A.; Cherezov, Vadim; Liu, Wei; Bandaru, Sateesh; English, Niall J.; Gati, Cornelius; Barty, Anton; Yefanov, Oleksandr; Chapman, Henry N.; Diederichs, Kay; Messerschmidt, Marc; Boutet, Sébastien; Williams, Garth J.; Marvin Seibert, M.; Caffrey, Martin

    2015-12-17

    Diacylglycerol kinase catalyses the ATP-dependent conversion of diacylglycerol to phosphatidic acid in the plasma membrane of Escherichia coli. The small size of this integral membrane trimer, which has 121 residues per subunit, means that available protein must be used economically to craft three catalytic and substrate-binding sites centred about the membrane/cytosol interface. How nature has accomplished this extraordinary feat is revealed here in a crystal structure of the kinase captured as a ternary complex with bound lipid substrate and an ATP analogue. Residues, identified as essential for activity by mutagenesis, decorate the active site and are rationalized by the ternary structure. The γ-phosphate of the ATP analogue is positioned for direct transfer to the primary hydroxyl of the lipid whose acyl chain is in the membrane. A catalytic mechanism for this unique enzyme is proposed. As a result, the active site architecture shows clear evidence of having arisen by convergent evolution.

  10. Topologically insulating states in ternary transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Lin, Xianqing; Ni, Jun

    2017-01-01

    The topological and electronic properties of monolayered monoclinic transition metal dichalcogenide (TMD) alloys (1T '-M1-xNxX2 with M, N = Cr, Mo, W and X = S, Se) have been studied through calculations based on the projected Wannier functions obtained from first-principles calculations. We predict that the ternary compounds 1T '-Mo1-xCrxS2 with x up to 7/12 and all 1T '-Mo1-xWxSe2 host topologically insulating states with band gaps comparable to the pure systems. For Cr contained alloys, the mechanism of sign changing of Berry curvature is proposed to explain the trivial band topology of some configurations. The predicted topologically insulating ternary TMDs may be promising candidates for future realization of topological devices.

  11. Ternary structure reveals mechanism of a membrane diacylglycerol kinase

    NASA Astrophysics Data System (ADS)

    Li, Dianfan; Stansfeld, Phillip J.; Sansom, Mark S. P.; Keogh, Aaron; Vogeley, Lutz; Howe, Nicole; Lyons, Joseph A.; Aragao, David; Fromme, Petra; Fromme, Raimund; Basu, Shibom; Grotjohann, Ingo; Kupitz, Christopher; Rendek, Kimberley; Weierstall, Uwe; Zatsepin, Nadia A.; Cherezov, Vadim; Liu, Wei; Bandaru, Sateesh; English, Niall J.; Gati, Cornelius; Barty, Anton; Yefanov, Oleksandr; Chapman, Henry N.; Diederichs, Kay; Messerschmidt, Marc; Boutet, Sébastien; Williams, Garth J.; Marvin Seibert, M.; Caffrey, Martin

    2015-12-01

    Diacylglycerol kinase catalyses the ATP-dependent conversion of diacylglycerol to phosphatidic acid in the plasma membrane of Escherichia coli. The small size of this integral membrane trimer, which has 121 residues per subunit, means that available protein must be used economically to craft three catalytic and substrate-binding sites centred about the membrane/cytosol interface. How nature has accomplished this extraordinary feat is revealed here in a crystal structure of the kinase captured as a ternary complex with bound lipid substrate and an ATP analogue. Residues, identified as essential for activity by mutagenesis, decorate the active site and are rationalized by the ternary structure. The γ-phosphate of the ATP analogue is positioned for direct transfer to the primary hydroxyl of the lipid whose acyl chain is in the membrane. A catalytic mechanism for this unique enzyme is proposed. The active site architecture shows clear evidence of having arisen by convergent evolution.

  12. Applications of ternary systems in specific cosmetic formulations.

    PubMed

    Comelles, F; Megias, V; Sánchez, J; Parra, J L; Coll, J; Balaguer, F; Pelejero, C

    1989-02-01

    Synopsis The study of ternary systems leads to the understanding of the physico-chemical aspect and allows the contribution of the different components to a cosmetic formulation to be developed. The present investigation was centred in the zone of transparent get belonging to a previously studied ternary system containing a broad variety of different structural compositions. The possibility of including an active sunscreen as well as the ability to increase the water content of the gel was studied. The microscopical study of the compositions with polarized light allowed us to assign the corresponding different structures. A correlation between these structures and their physico-chemical properties, with special emphasis to rheology, has been established.

  13. Experimental Investigation of Ternary Alloys for Fusion Breeding Blankets

    SciTech Connect

    Choi, B. William; Chiu, Ing L.

    2015-10-26

    Future fusion power plants based on the deuterium-tritium (DT) fuel cycle will be required to breed the T fuel via neutron reactions with lithium, which will be incorporated in a breeding blanket that surrounds the fusion source. Recent work by LLNL proposed the used of liquid Li as the breeder in an inertial fusion energy (IFE) power plant. Subsequently, an LDRD was initiated to develop alternatives ternary alloy liquid metal breeders that have reduced chemical reactivity with water and air compared to pure Li. Part of the work plan was to experimentally investigate the phase diagrams of ternary alloys. Of particular interest was measurement of the melt temperature, which must be low enough to be compatible with the temperature limits of the steel used in the construction of the chamber and heat transfer system.

  14. Miscibility critical pressures in monolayers of ternary lipid mixtures.

    PubMed Central

    Keller, S L; Anderson, T G; McConnell, H M

    2000-01-01

    When phospholipids are mixed with cholesterol in a monolayer at an air-water interface, coexisting 2-dimensional liquid phases can be observed if the surface pressure, pi, is lower than the miscibility critical pressure, pi(c). Ternary mixtures of two phospholipid species with dihydrocholesterol have been reported to have critical pressures that are linearly proportional to the relative composition of the phospholipids. However, we report here that, if the acyl chains of the two phospholipids differ significantly in length or unsaturation, the behavior is markedly different. In this case, the critical pressure of the ternary mixture can be remarkably high, exceeding the critical pressures of the corresponding binary mixtures. High critical pressures are also seen in binary mixtures of phospholipid and dihydrocholesterol when the two acyl chains of the phospholipid differ sufficiently in length. Using regular solution theory, we interpret the elevated critical pressures of these mixtures as an attractive interaction between the phospholipid components. PMID:11023907

  15. Ternary structure reveals mechanism of a membrane diacylglycerol kinase

    PubMed Central

    Li, Dianfan; Stansfeld, Phillip J.; Sansom, Mark S. P.; Keogh, Aaron; Vogeley, Lutz; Howe, Nicole; Lyons, Joseph A.; Aragao, David; Fromme, Petra; Fromme, Raimund; Basu, Shibom; Grotjohann, Ingo; Kupitz, Christopher; Rendek, Kimberley; Weierstall, Uwe; Zatsepin, Nadia A.; Cherezov, Vadim; Liu, Wei; Bandaru, Sateesh; English, Niall J.; Gati, Cornelius; Barty, Anton; Yefanov, Oleksandr; Chapman, Henry N.; Diederichs, Kay; Messerschmidt, Marc; Boutet, Sébastien; Williams, Garth J.; Marvin Seibert, M.; Caffrey, Martin

    2015-01-01

    Diacylglycerol kinase catalyses the ATP-dependent conversion of diacylglycerol to phosphatidic acid in the plasma membrane of Escherichia coli. The small size of this integral membrane trimer, which has 121 residues per subunit, means that available protein must be used economically to craft three catalytic and substrate-binding sites centred about the membrane/cytosol interface. How nature has accomplished this extraordinary feat is revealed here in a crystal structure of the kinase captured as a ternary complex with bound lipid substrate and an ATP analogue. Residues, identified as essential for activity by mutagenesis, decorate the active site and are rationalized by the ternary structure. The γ-phosphate of the ATP analogue is positioned for direct transfer to the primary hydroxyl of the lipid whose acyl chain is in the membrane. A catalytic mechanism for this unique enzyme is proposed. The active site architecture shows clear evidence of having arisen by convergent evolution. PMID:26673816

  16. Do aqueous ternary complexes influence the TALSPEAK process?

    SciTech Connect

    Leggett, C. j.; Liu, G.; Jensen, M. P.; Chemical Sciences and Engineering Division

    2010-01-01

    The aqueous speciation of trivalent lanthanide and actinide cations in solutions containing DTPA (diethylenetriamine-N,N,N',N',N'-pentaacetic acid) and lactic acid were studied under conditions representative of the TALSPEAK process. Spectrophotometric titrations, fluorescence spectroscopy, and thermometric titrations were used to search for indications of ternary metal-DTPA-lactate complexes. The addition of lactate anions to metal-DTPA complexes was undetectable by any of these techniques, even at free lactate concentrations of 0.75 M. Although lactic acid is necessary for the optimal performance of the TALSPEAK process, we find that the fractions of aqueous ternary Ln3+/An3+-DTPA-lactate complexes are far too low to account for the observed acid dependence of TALSPEAK metal extraction.

  17. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  18. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Employment and Training Administration Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical Information Center, Woburn, MA; Amended Certification Regarding... Semiconductor, Inc., Technical Information Center, Tempe, Arizona. The notice was published in the...

  19. Electrodeposition of amorphous ternary nickel-chromium-phosphorus alloy

    DOEpatents

    Guilinger, Terry R.

    1990-01-01

    Amorphous ternary nickel-chromium-phosphorus alloys are electrodeposited from a bath comprising a nickel salt, a chromium salt, a phosphorus source such as sodium hypophosphite, a complexing agent for the nickel ions, supporting salts to increase conductivity, and a buffering agent. The process is carried out at about room temperature and requires a current density between about 20 to 40 A/dm.sup.2.

  20. Simulation model for urban ternary mix-traffic flow

    NASA Astrophysics Data System (ADS)

    Deo, Lalit; Akkawi, Faisal; Deo, Puspita

    2007-12-01

    A two-lane two-way traffic light controlled X-intersection for ternary mix traffic (cars + buses (equivalent vehicles) + very large trucks/ buses) is developed based on cellular automata model. This model can provide different matrices such as throughput, queue length and delay time. This paper will describe how the model works and how composition of traffic mix effects the throughput (numbers of vehicles navigate through the intersection per unit of time (vph)) and also compare the result with homogeneous counterpart.

  1. Ternary fission of 260No in equatorial configuration

    NASA Astrophysics Data System (ADS)

    Ismail, M.; Seif, W. M.; Hashem, A. S.

    2016-10-01

    Spontaneous ternary fission is one of the observed decay modes of heavy nuclei. We systematically investigate the equatorial ternary fission of the 260No isotope. In the framework of the three-cluster model, the three-body interaction potential is calculated in terms of the folded M3Y-Reid nucleon-nucleon force and the Coulomb one. The relative orientations of the deformed heavy nuclei participating in the fragmentation process are taken into account. All possible emitted light particles with even mass numbers A = 4-52 are considered. The favored fragmentation channels are estimated as the ones characterized with peaks in the Q-value and local minima in the fragmentation potential. In the absence of nuclear deformations, the closed shell effects are found to play the key role in determining the channels of minimum fragmentation potential and the involved two heavier fragments tend to be of comparable sizes. Inclusion of nuclear deformations manifest the participation of highly deformed prolate nuclei, with large mass asymmetry, as heavy fragment partners in the estimated favored fragmentation channels. The results indicate that the equatorial ternary fission of 260No is most favored with the light emitted nuclei 4,6,8 2He and 10 4Be through the fragmentation channels 155 60Nd + 4 2He + 101 0Zr, 153 60Nd + 6 2He + 101 40Zr, 152 60Nd + 8 2He + 100 40Zr, and 152 0Nd + 10 4Be + 98 38Sr, respectively.

  2. Thermodynamic properties of liquid Mg-ln-Cd ternary solutions

    NASA Astrophysics Data System (ADS)

    Moser, Z.; Gasior, W.; Panek, Z.

    1984-09-01

    By means of concentration cells of the following type: Mg(s)∣MgCl2 in (LiCl-KCl)eut( l)∣Mg-In or Mg-ln-Cd( l), the partial thermodynamic data of Mg in Mg-ln and Mg-ln-Cd liquid solutions have been obtained in the composition range 0.1 ≤ XMg ≤ 0.7 for binary while for ternary alloys for t = 0.4, 0.6, and 0.8 (where t = XIn/(XIn + XCd)) and at various mangesium concentrations 0.1≤ XMg ≤ 0.6. Both ternary and binary alloys were investigated at a temperature range 750 to 900 K. Experimental partial excess Gibbs energies of Mg were interpreted by the Pelton and Flengas method. Results for Mg-ln system show a slight difference in comparison with previously published data for the same system also from emf studies. Results of this study for Mg-ln system exhibit negative and positive excess entropies of magnesium and the same is observed in ternary system Mg-ln-Cd at the range of concentration close to Mg-ln.

  3. A Comparative Biocompatibility Analysis of Ternary Nitinol Alloys

    PubMed Central

    Haider, Waseem; Munroe, Norman; Pulletikurthi, Chandan; Singh Gill, Puneet K.; Amruthaluri, Sushma

    2009-01-01

    Nitinol alloys are rapidly being utilized as the material of choice in a variety of applications in the medical industry. It has been used for self-expanding stents, graft support systems, and various other devices for minimally invasive interventional and endoscopic procedures. However, the biocompatibility of this alloy remains a concern to many practitioners in the industry due to nickel sensitivity experienced by many patients. In recent times, several new Nitinol alloys have been introduced with the addition of a ternary element. Nevertheless, there is still a dearth of information concerning the biocompatibility and corrosion resistance of these alloys. This study compared the biocompatibility of two ternary Nitinol alloys prepared by powder metallurgy (PM) and arc melting (AM) and critically assessed the influence of the ternary element. ASTM F 2129-08 cyclic polarization in vitro corrosion tests were conducted to evaluate the corrosion resistance in phosphate buffered saline (PBS). The growth of endothelial cells on NiTi was examined using optical microscopy. PMID:19956791

  4. Formation of a Ternary Complex for Selenocysteine Biosynthesis in Bacteria*

    PubMed Central

    Silva, Ivan R.; Serrão, Vitor H. B.; Manzine, Livia R.; Faim, Lívia M.; da Silva, Marco T. A.; Makki, Raphaela; Saidemberg, Daniel M.; Cornélio, Marinônio L.; Palma, Mário S.; Thiemann, Otavio H.

    2015-01-01

    The synthesis of selenocysteine-containing proteins (selenoproteins) involves the interaction of selenocysteine synthase (SelA), tRNA (tRNASec), selenophosphate synthetase (SelD, SPS), a specific elongation factor (SelB), and a specific mRNA sequence known as selenocysteine insertion sequence (SECIS). Because selenium compounds are highly toxic in the cellular environment, the association of selenium with proteins throughout its metabolism is essential for cell survival. In this study, we demonstrate the interaction of SPS with the SelA-tRNASec complex, resulting in a 1.3-MDa ternary complex of 27.0 ± 0.5 nm in diameter and 4.02 ± 0.05 nm in height. To assemble the ternary complex, SPS undergoes a conformational change. We demonstrated that the glycine-rich N-terminal region of SPS is crucial for the SelA-tRNASec-SPS interaction and selenoprotein biosynthesis, as revealed by functional complementation experiments. Taken together, our results provide new insights into selenoprotein biosynthesis, demonstrating for the first time the formation of the functional ternary SelA-tRNASec-SPS complex. We propose that this complex is necessary for proper selenocysteine synthesis and may be involved in avoiding the cellular toxicity of selenium compounds. PMID:26378233

  5. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  6. Dielectric screening in semiconductors

    NASA Astrophysics Data System (ADS)

    Harrison, Walter A.; Klepeis, John E.

    1988-01-01

    Intra-atomic and interatomic Coulomb interactions are incorporated into bond-orbital theory, based upon universal tight-binding parameters, in order to treat the effects of charge redistribution in semiconductor bonds. The dielectric function ɛ(q) is obtained for wave numbers in a [100] direction. The screening of differences in average hybrid energy across a heterojunction is calculated in detail, indicating that the decay length for the potential depends upon the relative values of Madelung and intra-atomic Coulomb terms. The parameters used here predict an imaginary decay length and thus an oscillating potential near the interface. The same theory is applied to point defects by imbedding a cluster in a matrix lattice, taking charges in that lattice to be consistent with continuum theory. Illustrating the theory with a phosphorus impurity in silicon, it is seen that the impurity and its neighboring atoms have charges on the order of only one-tenth of an electronic charge, alternating in sign from neighbor to neighbor as for planar defects. Although there are shifts in the term values on the order of a volt, the difference in these shifts for neighboring atoms is much smaller so that the effect on the bonds is quite small. This behavior is analogous to the response of a dielectric continuum to a point charge: The medium is locally neutral except at the center of the cluster and there are slowly varying potentials e2/ɛr. Because of this slow variation, free-atom term values should ordinarily suffice for the calculation of bond properties and bond lengths at impurities. Corrections are larger for homovalent substitutions such as carbon in silicon.

  7. A Ternary Phase-Field Model Incorporating Commercial CALPHAD Software (Preprint)

    DTIC Science & Technology

    2008-10-21

    AFRL-RX-WP-TP-2009-4033 A TERNARY PHASE-FIELD MODEL INCORPORATING COMMERCIAL CALPHAD SOFTWARE (PREPRINT) J.P. Simmons Metals...Article Preprint 01 January 2009 – 31 January 2009 4. TITLE AND SUBTITLE A TERNARY PHASE-FIELD MODEL INCORPORATING COMMERCIAL CALPHAD SOFTWARE...2008 14. ABSTRACT A ternary phase-field model was developed that is linked directly to commercial CALPHAD software to provide quantitative

  8. Synthesis of wurtzite-zincblende Cu2ZnSnS4 and Cu2ZnSnSe4 nanocrystals: insight into the structural selection of quaternary and ternary compounds influenced by binary nuclei

    NASA Astrophysics Data System (ADS)

    Li, Yingwei; Han, Qifeng; Kim, Tae Whan; Shi, Wangzhou

    2014-03-01

    Nearly monodispersed wurtzite-dominant Cu2ZnSnS4 and zincblende-dominant Cu2ZnSnSe4 nanocrystals were successfully synthesized by mixing metal salts with heated thiourea or selenourea in oleylamine. A perspective of the structural relationship between quaternary and ternary semiconductors was investigated through the application of different anion sources to prepare Cu2SnS3 and Cu2SnSe3 nanocrystals. Investigations on copper-based binary compounds found that CuSe (or CuS) and Cu2Se (or Cu1.96S, Cu9S5) nuclei were primarily responsible for the formation of zincblende or wurtzite structures, respectively. Further management over these binary intermediates corresponded to slight structural transformations of the quaternary nanocrystals which could be observed not only in XRD patterns, but from optical and electrical properties as well. According to these results, Cu2ZnGeS4 nanocrystals with wurtzite-dominant structures were first reported using SC(NH2)2, which also verified that the binary semiconductors are the determinative factors.Nearly monodispersed wurtzite-dominant Cu2ZnSnS4 and zincblende-dominant Cu2ZnSnSe4 nanocrystals were successfully synthesized by mixing metal salts with heated thiourea or selenourea in oleylamine. A perspective of the structural relationship between quaternary and ternary semiconductors was investigated through the application of different anion sources to prepare Cu2SnS3 and Cu2SnSe3 nanocrystals. Investigations on copper-based binary compounds found that CuSe (or CuS) and Cu2Se (or Cu1.96S, Cu9S5) nuclei were primarily responsible for the formation of zincblende or wurtzite structures, respectively. Further management over these binary intermediates corresponded to slight structural transformations of the quaternary nanocrystals which could be observed not only in XRD patterns, but from optical and electrical properties as well. According to these results, Cu2ZnGeS4 nanocrystals with wurtzite-dominant structures were first reported

  9. Fiscal Year 2011 Director’s Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices

    DTIC Science & Technology

    2014-03-01

    research efforts on two representative examples, III-Nitride/ silicon carbide ( SiC ) avalanche photodetectors and compositionally inhomogeneous indium...single photon counting avalanche photodiodes are not specified for operation at wavelengths shorter than 400 nm. Silicon carbide ( SiC ) has many... Silicon Carbide , Ultraviolet detectors, Terahertz Sources, Heterogeneous devices 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT

  10. Aluminum nitride, Scandium nitride, and Aluminum-Scandium-Nitride ternary alloys : Structural, optical, and electrical properties

    NASA Astrophysics Data System (ADS)

    Deng, Ruopeng

    is ideal for shear mode electromechanical coupling, which is maximized at 48°. And this developing bi-axial texture is attributed to evolutionary competitive growth mode which selects out-of-plane and in-plane orientation by nuclei growth rates. In order to determine electronic band structure of ScN, simulation and experimental results are combined. First-principle simulation with HSE exchange function suggests rock-salt ScN to be indirect semiconductor with indirect gap of 0.92 eV and direct gap of 2.02 eV at X point, as well as electron transport effective mass of 0.33+/-0.05 m0 at conduction band bottom. In experiment, epitaxial ScN thin films deposited on single-crystal MgO 001 substrates by reactive sputtering are found unintentionally doped to be degenerate n-type semiconductor with electron density between 1.12x10 20 and 12.8x1020 cm-3. Direct bandgap determined by optic absorption method is observed decreasing with carrier concentration due to Bursten-Moss effect in a roughly linear trend, yielding an extrapolated intrinsic gap value of 2.1 eV at zero carrier density. Electron transport effective mass is also calculated from fitted plasma frequency, which is 0.40+/-0.02 m0. The overall great agreement between simulation and experiment can be concluded in regard of bandgap and effective mass, as well as optic reflectance level. Al-Sc-N ternary alloys can be categorized into two regions: Al-rich wurtizte Al1-xScxN and Sc-rich rock-salt Sc1-xAlxN. For Al1-xScxN, multiple phenomena are observed in experiment as Sc concentration x increases, from epitaxial samples deposited on sapphire 0001 substrates at 850°C: (1) Anisotropic lattice expansion with a = 3.111+0.744x A while c remains at 4.989+/-0.005 A, implying elongation of bond lengths as well as decrease in bond angle from 108.2° towards ~90° corresponding to meta-stable h-ScN. (2) Dielectric constant increases with Sc concentration as epsiloninfinity = 4.15 + 3.2x, correlated to the almost linear

  11. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    NASA Astrophysics Data System (ADS)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  12. Chemical vapor deposition of ternary refractory nitrides for diffusion barrier applications

    SciTech Connect

    Smith, P.M.; Custer, J.S.; Fleming, J.G.; Roherty-Osmun, E.; Cohn, M.; Jones, R.V.

    1996-06-01

    As semiconductor device dimensions shrink, new diffusion barriers will be required. Amorphous refractory ternaries have been identified as promising barrier candidates; because sputtering may not be suitable, we have developed chemical vapor deposition processes for these materials. Acceptable deposition rates are found for each of these processes at 350 C, with all depositions performed between 300 and 450 C. The first process produces a range of Ti-Si-N compositions from Ti organometallic, SiH{sub 4}, and NH{sub 3}. Resistivity of the Ti-Si-N films changes with Si content from >1{Omega}-cm at 25 at.% Si down to that of TiN (200{mu}{Omega}-cm). Step coverage obtained is better than 80% on 0.5 {mu}m features with aspect ratios of >1.6. The second CVD process produces a range of W-Si-N film compositions from WF{sub 6}, Si{sub 2}H{sub 6}, and NH{sub 3}. Resistivities vary with composition from 350 to 20,000 {mu}{Omega}-cm. Step coverage obtained is 100% on reentrant 0.25 {mu}m features with aspect ratios of 4.0. The third process employs WF{sub 6}(reduced by SiH{sub 4}), B{sub 2}H{sub 6}, and NH{sub 3} to produce W-B-N films with a range of compositions. Resistivities range from 200 to 20,000 {mu}{Omega}-cm. Step coverage obtained is {approx}40% on 1.5 {mu}m features with aspect ratios of 5.5.

  13. Thienoacene-based organic semiconductors.

    PubMed

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors.

  14. Diamagnetic excitons in semiconductors (Review)

    NASA Astrophysics Data System (ADS)

    Seisyan, R. P.

    2016-05-01

    Optical properties of semiconductor crystals in the presence of a high magnetic field have been considered. The field turn-on gives rise to oscillations of the optical-absorption edge or, more specifically, the formation of a complex absorption spectrum with a periodic structure, referred to as the spectrum of "diamagnetic excitons." Such spectra appear a source of the most accurate knowledge about the band structure of semiconductors. Moreover, these spectra can be used for simulating the low-dimensional state in semiconductors and possible interpretation of the emission spectra of neutron stars. The proposed analytical review is based on extensive experimental and theoretical data contained mostly in cited original works of the author with colleagues.

  15. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  16. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  17. Quantum Transport in Semiconductor Devices

    DTIC Science & Technology

    1994-06-30

    TITLE AND SUBTITLE S. FUNDING NUMBERS " Quantum Transport in Semiconductor Devices" 6. AUTHOR(S) ,DftftLo3-91-6-oo 7 David K. Ferry 7. PERFORMING...OF ABSTRACT UNCLASSIFIED UNCLASSIFIED UNCLASSIFIED UL NZIN 1540-01-280-5500 Standard Form 298 (Rev 2-89) PrinCrlt>• oy ANSI SIC Z39-18 QUANTUM ... TRANSPORT IN SEMICONDUCTOR DEVICES Final Report on DAAL03-91-G-0067 (28461-EL) David K. Ferry, Principal Investigator Department of Electrical Engineering

  18. A brief history of ... semiconductors

    NASA Astrophysics Data System (ADS)

    Jenkins, Tudor

    2005-09-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival of this successful quantum theory of solids, together with a concentration on the growth of pure silicon and germanium and an understanding of their properties, saw an explosion in activity in semiconductor studies that has continued to this day.

  19. 3D Nanostructuring of Semiconductors

    NASA Astrophysics Data System (ADS)

    Blick, Robert

    2000-03-01

    Modern semiconductor technology allows to machine devices on the nanometer scale. I will discuss the current limits of the fabrication processes, which enable the definition of single electron transistors with dimensions down to 8 nm. In addition to the conventional 2D patterning and structuring of semiconductors, I will demonstrate how to apply 3D nanostructuring techniques to build freely suspended single-crystal beams with lateral dimension down to 20 nm. In transport measurements in the temperature range from 30 mK up to 100 K these nano-crystals are characterized regarding their electronic as well as their mechanical properties. Moreover, I will present possible applications of these devices.

  20. Wide band gap semiconductor templates

    DOEpatents

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  1. Nonlinear Peltier effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali

    2007-09-01

    Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically for single parabolic band semiconductors assuming a shifted Fermi-Dirac electronic distribution under an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters affecting the nonlinear behavior are doping concentration, effective mass, and electron-phonon coupling. Current density thresholds at which nonlinear behavior is observable are extracted from numerical data. It is shown that the nonlinear Peltier effect can be used to enhance cooling of thin film microrefrigerator devices especially at low temperatures.

  2. Optical Processing With Photorefractive Semiconductors

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory

    1989-01-01

    Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

  3. Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods

    NASA Astrophysics Data System (ADS)

    Dyck, J. S.; Colvin, J. R.; Quayle, P. C.; Peshek, T. J.; Kash, K.

    2016-06-01

    II-IV-nitride compounds are tetrahedrally bonded, heterovalent ternary semiconductors that have recently garnered attention for their potential technological applications. These materials are derived from the parent III-nitride compounds; ZnGeN2 is the II-IV-nitride analogue to the III-nitride GaN. Very little is known about the transport properties of ZnGeN2. In this work, we present Seebeck coefficient ( S) data on 3-micron-diameter, 70-micron-long, single-crystal ZnGeN2 rods, employing a novel measurement approach. The measurements of S show that the majority free carriers are electrons, and imply that the carrier gas is degenerate. Within a single-band model for the conduction band, a carrier concentration of order 1019 cm-3 was estimated for a measured S = -90 μV/K. Together with electrical transport measurements, a lower limit for the electron mobility is estimated to be ˜20 cm2/V-s. A discussion of this material as a thermoelectric is presented. The background level of free electrons in this unintentionally doped ZnGeN2 is very near the predicted optimum value for maximum thermoelectric performance.

  4. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  5. Semiconductor Reliability--Another Field for Physicists.

    ERIC Educational Resources Information Center

    Derman, Samuel; Anderson, Wallace T.

    1994-01-01

    Stresses that an important industrial area is product reliability, especially for semiconductors. Suggests that physics students would benefit from training in semiconductors: the many modes of failure, radiation effects, and electrical contact problems. (MVL)

  6. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  7. Semiconductor structure and recess formation etch technique

    DOEpatents

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  8. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    NASA Astrophysics Data System (ADS)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Posadas, Agham; Demkov, Alexander A.; Ekerdt, John G.

    2015-12-01

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al2O3 and HfO2. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO3), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  9. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    SciTech Connect

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-12-15

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al{sub 2}O{sub 3} and HfO{sub 2}. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO{sub 3}), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

  10. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  11. Post-processing of lattice dynamical data for large crystalline systems (disordered semiconductors)

    NASA Astrophysics Data System (ADS)

    Postnikov, Andrei

    2013-02-01

    In first-principes simulations of mixed semiconductors, the calculations ought to be done on large supercells, deprived of any symmetry due to random placement of atoms and their subsequent relaxation, even if underlying crystal structure is well defined. Calculation of force constants and subsequent diagonalization of the dynamical matrix produces large bulks of data in the form of very dense eigenvectors and long phonon eigenvectors. Different algorithms of projection help to extract meaningful information from these data, according to actual needs. Projections along with a given q-vector permit either (i) to enhance the genuinely zone-center phonon features, likely to be revealed in Raman or infrared spectra, or (ii) to reveal the traces of phonon dispersion as function of the q variation, in the situation where formally the translation symmetry is broken. Projections along with symmetry coordinates corresponding to different irreducible representations of the space group of the underlying perfect crystal help to approximatively attribute specific vibration patterns according to their symmetry properties, and hence to figure out experimental setup in which they can be observed. Similar techniques can be applied to the study of perfect crystals with complex structure, typically superlattices constructed from much simpler prototypes. The examples will be given from II-VI and III-V mixed (pseudobinary) semiconductors, from ternary and quaternary semiconductors used for photovoltaic applications, and others.

  12. Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductor structure

    NASA Astrophysics Data System (ADS)

    Abramov, I. I.; Danilyuk, A. L.

    1997-08-01

    A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal-insulator-midband gap semiconductor-insulator-semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states.

  13. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  14. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  15. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  16. Semiconductor nanocrystal-based phagokinetic tracking

    SciTech Connect

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  17. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  18. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  19. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  20. Modeling of Ternary Element Site Substitution in NiAl

    NASA Technical Reports Server (NTRS)

    Bozzolo, Guillermo; Noebe, Ronald D.; Honecy, Frank

    2000-01-01

    It is well recognized that ternary alloying additions can have a dramatic impact on the behavior of ordered intermetallic alloys such as nickel aluminides. Properties as diverse as yield strength, fracture strength, fracture mode, cyclic oxidation resistance, creep strength, and thermal and electrical diffusivity can change by orders of magnitude when a few percent or less of a ternary element is added. Yet our understanding of the resulting point defect structures and the simple site preferences of ternary alloying additions is poor because these are extremely difficult characteristics to determine. This disconnection between the understanding of the structure and properties in ordered alloys is at least in part responsible for the limited development and commercialization of these materials. Theoretical methods have provided useful but limited insight in this area, since most techniques suffer from constraints in the type of elements and the crystallographic structures that can be modeled. In an effort to overcome these limitations, the Bozzolo-Ferrante-Smith (BFS) method for alloys was designed. After a brief description of this approximate quantum mechanical approach, we use BFS to investigate the energetics of Si, Ti, V, Cr, Fe, Co, Cu, Zr, Nb, Mo, Ru, Hf, Ta and W additions to B2-ordered, stoichiometric NiAl. In addition to determining the site preference for these alloying additions over a range of compositions, we include results for the concentration dependence of the lattice parameter. In this introductory paper, we performed our analyses in the absence of constitutional and thermal vacancies for alloys of the form Ni50(Al,X)50. Where data exist, a comparison between experimental, theoretical, and BFS results is also included.

  1. Effect of polarity on Ni/InN interfacial reactions

    SciTech Connect

    Kragh-Buetow, K. C.; Weng, X.; Readinger, E. D.; Wraback, M.; Mohney, S. E.

    2013-01-14

    Ni films on (0001) and (0001) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni{sub 3}InN{sub x} ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

  2. Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

    SciTech Connect

    Vasil’ev, V. I.; Gagis, G. S. Kuchinskii, V. I.; Danil’chenko, V. G.

    2015-07-15

    Processes are considered in which ultrathin layers of III–V ternary solid solutions are formed via the delivery of Group-V element vapors to GaAs and GaSb semiconductor plates, with solid-phase substitution reactions occurring in the surface layers of these plates. This method can form defect-free GaAs{sup 1–x}P{sup x}, GaAs{sup x}Sb{sup 1–x}, and GaP{sup x}Sb{sup 1–x} layers with thicknesses of 10–20 nm and a content x of the embedded components of up to 0.04.

  3. Plutonium microstructures. Part 2. Binary and ternary alloys

    SciTech Connect

    Cramer, E.M.; Bergin, J.B.

    1983-12-01

    This report is the second of three parts that exhibit illustrations of inclusions in plutonium metal from inherent and tramp impurities, of intermetallic and nonmetallic constituents from alloy additions, and of the effects of thermal and mechanical treatments. This part includes illustrations of the microstructures in binary cast alloys and a few selected ternary alloys that result from measured additions of diluent elements, and of the microconstituents that are characteristic of phase fields in extended alloy systems. Microhardness data are given and the etchant used in the preparation of each sample is described.

  4. Site Occupancy of Ternary Additions to B2 Alloys

    NASA Technical Reports Server (NTRS)

    Bozzolo, Guillermo H.; Noebe, Ronald D.; Amador, Carlos

    2002-01-01

    In this broad-based survey study, the substitutional site preference of ternary alloying additions to B2 compounds (stable at room temperature and 50/50 composition) is determined using the Bozzolo-Ferrante-Smith (BFS) method for alloys. The method is applied to Ni, Al, Ti, Cr, Cu, Co, Fe, Ta, Hf, Mo, Nb, W, V and Ru additions to NiAl, FeAl, CoAl, CoFe, CoHf, CoTi, FeTi, RuAl, RuSi, RuHf, RuTi, and RuZr. The results are compared, when available, to experimental data and other theoretical results.

  5. A Ternary Phase Diagram for a Less Hazardous System

    NASA Astrophysics Data System (ADS)

    Udale, Barbara A.; Wells, John D.

    1995-12-01

    The ternary phase diagram for the partially miscible liquid system n-propanol-n-heptane-water can be determined readily in an undergraduate laboratory experiment. The coexistence curve is obtained from titration results. Tie lines are then estimated from the compositions of pairs of phases in equilibrium, the propanol concentrations being determined by gas chromatography. The reagents are less hazardous than those of the classic acetic acid-chloroform-water system, and the gas chromatographic analysis has more interest for students than the acid-base titrations of the older experiment.

  6. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  7. Ab initio study of structural, electronic and optical properties of ternary CdO1-xSex alloys using special quasi-random structures

    NASA Astrophysics Data System (ADS)

    Muhammad, Rashid; Fayyaz, Hussain; Muhammad, Imran; A. Ahmad, S.; A. Noor, N.

    2014-01-01

    The structural, electronic, and optical properties of binary CdO, CdSe, and their ternary CdO1-xSex alloys (0 <= x <= 1) in the rock salt and zinc blend phases have been studied by the special quasi-random structure (SQS) method. All the calculations are performed using full-potential linearized augmented plane wave plus local orbital's (FP-LAPW+lo) method within the framework of density function theory (DFT). We use Wu—Cohen (WC) generalized gradient approximation (GGA) to calculate structural parameters, whereas both Wu—Cohen and Engel—Vosko (EV) GGA have been applied to calculate electronic structure of the materials. Our predicted results of lattice constant and bulk modulus show only a slight deviation from Vegard's law for the whole concentrations. The obtained band structure indicates that for the rock-salt phase, the ternary alloys present semi-metallic behavior, while for the zinc blend phase, semiconductor behavior with direct bandgap is observed with decreasing order of x except for CdSe. Finally, by incorporating the basic optical properties, we discuss the dielectric function, refractive index, optical reflectivity, the absorption coefficient, and optical conductivity in terms of incident photon energy up to 14 eV. The calculated results of both binaries are in agreement with existing experimental and theoretical values.

  8. Chemical modification of semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Finklea, H. O.

    1981-01-01

    Results of research on the chemical modification of TiO2 powders in the gas phase and the examination of the modified powders by infrared absorption spectroscopy are comprehensively summarized. The range of information obtainable by IR spectroscopy of chemically modified semiconductors, and a definition of the optimum reaction conditions for synthesizing a monolayer of methylsilanes using vapor phase reaction conditions were considered.

  9. Conductive Container for Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Rice, J. T.

    1986-01-01

    Container for semiconductor components not only protects them against mechanical damage but ensures they are not harmed by electrostatic discharges. Container holds components in fixed positions so they can be serialized and identified from their locations. Suitable for holding components during both storing and shipping. Originally developed for microwave diodes, container concept readily adaptable to transistors and integrated circuits.

  10. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  11. A Brief History of ... Semiconductors

    ERIC Educational Resources Information Center

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  12. Electronic Properties of Semiconductor Interfaces.

    DTIC Science & Technology

    1983-02-01

    AD-A130 745 ELECTRONIC PROPERTIES OF SEMICONDUCTOR INTERFACES(U) /; UNIVERSIDAD AUfONOMA DE MADRID (SPAIN) DEPT DE FISICA DEL ESTADO SOLIDO F FLORES...J.Sfinchez-Dehesa 9. PERFORMING ORGANIZATION NAME AND ADDRESS 10. PROGRAM ELEMENT. PROJECT. TASK AREA & WORK UNIT NUMBERS Departamento de Fisica del Estado Solido 6.11.02A

  13. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  14. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  15. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, P.T.

    1985-03-05

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  16. Mechanical scriber for semiconductor devices

    DOEpatents

    Lin, Peter T.

    1985-01-01

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  17. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  18. Hopping conduction in polycrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, R. P.; Shukla, A. K.; Kapoor, A. K.; Srivastava, R.; Mathur, P. C.

    1985-03-01

    Measurements of dc conductivity (sigma) on polycrystalline semiconductors, viz., InSb, Si, and CdTe, have been reported in the temperature range 77-300 K. The conduction mechanism near liquid-nitrogen temperature has been identified as the hopping of charge carriers from the charged trap centers to empty traps near the Fermi level.

  19. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  20. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  1. Semiconductor technology program: Progress briefs

    NASA Technical Reports Server (NTRS)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  2. Using a Ternary Diagram to Display a System's Evolving Energy Distribution

    ERIC Educational Resources Information Center

    Brazzle, Bob; Tapp, Anne

    2016-01-01

    A ternary diagram is a graphical representation used for systems with three components. They are familiar to mineralogists (who typically use them to categorize varieties of solid solution minerals such as feldspar) but are not yet widely used in the physics community. Last year the lead author began using ternary diagrams in his introductory…

  3. Low-temperature solid-state preparation of ternary CdS/g-C3N4/CuS nanocomposites for enhanced visible-light photocatalytic H2-production activity

    NASA Astrophysics Data System (ADS)

    Cheng, Feiyue; Yin, Hui; Xiang, Quanjun

    2017-01-01

    Low-temperature solid-state method were gradually demonstrated as a high efficiency, energy saving and environmental protection strategy to fabricate composite semiconductor materials. CdS-based multiple composite photocatalytic materials have attracted increasing concern owning to the heterostructure constituents with tunable band gaps. In this study, the ternary CdS/g-C3N4/CuS composite photocatalysts were prepared by a facile and novel low-temperature solid-state strategy. The optimal ternary CdS/g-C3N4/CuS composite exhibits a high visible-light photocatalytic H2-production rate of 57.56 μmol h-1 with the corresponding apparent quantum efficiency reaches 16.5% at 420 nm with Na2S/Na2SO3 mixed aqueous solution as sacrificial agent. The ternary CdS/g-C3N4/CuS composites show the enhanced visible-light photocatalytic H2-evolution activity comparing with the binary CdS-based composites or simplex CdS. The enhanced photocatalytic activity is ascribed to the heterojunctions and the synergistic effect of CuS and g-C3N4 in promotion of the charge separation and charge mobility. This work shows that the low-temperature solid-state method is efficient and environmentally benign for the preparation of CdS-based multiple composite photocatalytic materials with enhanced visible-light photocatalytic H2-production activity.

  4. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  5. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  6. High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

    DOE PAGES

    Lu, Luyao; Chen, Wei; Xu, Tao; ...

    2015-06-04

    The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increasedmore » hole extraction, efficient energy transfer and better morphology. The working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.« less

  7. Release of DNA binary complexes from the ternary complexes by carboxymethyl poly(L-histidine).

    PubMed

    Asayama, Shoichiro; Sudo, Miyuki; Kawakami, Hiroyoshi

    2009-01-01

    The DNA ternary complexes with carboxymethyl poly(L-histidine) (CM-PLH) and poly(ethylenimine) (PEI) have released the DNA binary complexes with PEI by the protonation of CM-PLH at endosomal/lysosomal pH. The dissociation of the CM-PLH from the CM-PLH/PEI/DNA ternary complexes is proved by the fluorescence resonance energy transfer (FRET) analysis between the CM-PLH and PEI. The resulting PEI/DNA binary complexes easily released DNA, as compared with the CM-PLH/PEI/DNA ternary complexes, which was examined by competitive exchange with dextran sulfate. The release of the DNA binary complexes from the ternary complexes is promising mechanism for higher transfection activity by the CM-PLH/PEI/DNA ternary complexes.

  8. High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

    SciTech Connect

    Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

    2015-06-04

    The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increased hole extraction, efficient energy transfer and better morphology. The working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.

  9. Design of CNTFET-based 2-bit ternary ALU for nanoelectronics

    NASA Astrophysics Data System (ADS)

    Lata Murotiya, Sneh; Gupta, Anu

    2014-09-01

    This article presents a hardware-efficient design of 2-bit ternary arithmetic logic unit (ALU) using carbon nanotube field-effect transistors (CNTFETs) for nanoelectronics. The proposed structure introduces a ternary adder-subtractor functional module to optimise ALU architecture. The full adder-subtractor (FAS) cell uses nearly 72% less transistors than conventional architecture, which contains separate ternary cells for addition as well as subtraction. The presented ALU also minimises ternary function expressions with utilisation of binary gates for optimisation at the circuit level, thus attaining a simple design. Hspice simulations results demonstrate that the ALU ternary circuits achieve great improvement in terms of power delay product with respect to their CMOS counterpart at 32 nm.

  10. Optical Properties of Wurtzite Semiconductors Studied Using Cathodoluminescence Imaging and Spectroscopy

    NASA Astrophysics Data System (ADS)

    Juday, Reid

    The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with electrical and structural measurements in order to understand the behavior of hydrogen in the material. Deeply-bound excitons emitting near 3.37 and 3.42 eV are observed in films with a significant hydrogen concentration during cathodoluminescence at liquid helium temperatures. These radiative transitions are unstable during electron irradiation. Our observations suggest a hydrogen-related nature, as opposed to a previous assignment of stacking fault luminescence. The intensity of the 3.37 eV transition can be correlated with the electrical activation of the Mg acceptors. Next, the acceptor energy level of Mg in InGaN is shown to decrease significantly with an increase in the indium composition. This also corresponds to a decrease in the resistivity of these films. In addition, the hole concentration in multiple quantum well light emitting diode structures is much more uniform in the active region when Mg-doped InGaN (instead of Mg-doped GaN) is used. These results will help improve the efficiency of light emitting diodes, especially in the green/yellow color range. Also, the improved hole transport may prove to be important for the development of photovoltaic devices. Cathodoluminescence studies have also been performed on

  11. Binary halide, ternary perovskite-like, and perovskite-derivative nanostructures: hot injection synthesis and optical and photocatalytic properties.

    PubMed

    Lim, Suh-Ciuan; Lin, Hsuan-Peng; Tsai, Wei-Lun; Lin, Hao-Wu; Hsu, Yao-Tsung; Tuan, Hsing-Yu

    2017-03-17

    A variety of crystalline colloid binary halide, ternary perovskite-like and ternary perovskite-derivative nanostructures with well-defined morphologies were synthesized, thus expanding materials chemistry to the new category of nanomaterials. The optical and photocatalytic properties of ternary nanostructures were investigated.

  12. Advanced Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  13. Thermodynamic Modeling of the Al-Cr-Mn Ternary System

    NASA Astrophysics Data System (ADS)

    Cui, Senlin; Jung, In-Ho

    2017-03-01

    The phase diagram information available in the literature on the Al-Cr-Mn system was comprehensively evaluated and optimized for the first time to obtain a set of Gibbs energies of all the solid and liquid phases in the Al-Cr-Mn system. The Modified Quasi-chemical Model (MQM) was utilized to describe the Gibbs energy of the liquid phase of the Al-Cr-Mn system. The Compound Energy Formalism (CEF) was used to model the solid solution phases. A revision of the Al-Mn system was simultaneously conducted to consider the γ_H (Al8Mn5) phase. The liquid Cr-Mn phase was also remodeled using the Modified Quasi-chemical Model (MQM) to obtain a consistent description of the ternary Al-Cr-Mn liquid phase. Accurate description of the phase diagram of the entire Al-Cr-Mn system was obtained from the thermodynamic models with optimized parameters in the present study, and the model parameters can be used to predict the thermodynamic properties of the ternary system.

  14. Binding Energy Calculations for Novel Ternary Ionic Lattices

    NASA Astrophysics Data System (ADS)

    Rodríguez-Mijangos, Ricardo; Vazquez-Polo, Gustavo

    2002-03-01

    Theoretical calculations for the binding energy between metalic ions and negative ions on a novel ternary ionic lattice is carried out for several solid solutions prepared with different concentrations and characterized recently (1). The ternary lattices that reach a good miscibility are: KCl(x)KBr(y)RbCl(z) in three different concentrations: (x=y=z=0.33), (x=0.5, y=0.25, z=0.25) and (x=0.33, y=0.07, z=0.60). The binding energy for these novel structures is calculated from the lattice constants obtained by X ray diffractometry analysis performed on the samples and the Vegard law (2). For the repulsive force exponent m, an average of the m values was considered. The energy values obtained by the Born´expression are compared with corresponding energy values from the lattice with more complex expressions, such as the Born Mayer, Born-Van der Walls. There is a good aggreement between all these calculations. (1)R. R. Mijangos, A. Cordero-Borboa, E. Alvarez, M. Cervantes, Physics Letters A 282 (2001) 195-200. (2) G. Vazquez-Polo, R. R. Mijangos et al. Revista Mexicana de Fisica, 47, Diciembre 2001. In Press.

  15. Compositional Heterogeneity in Ternary Models for the Cell Membrane

    NASA Astrophysics Data System (ADS)

    Smith, Robin; Heberle, Frederick; Wu, Jing; Feigenson, Gerald

    2010-03-01

    Ternary models for the cell membrane comprised of cholesterol (Chol) plus high and low melting temperature lipids exhibit rich phase behavior as a function of temperature and composition. Of particular interest is a region of coexisting disordered and ordered fluid phases that is thought to indicate how lipids organize to promote protein function in the cell membrane. We have used fluorescence resonance energy transfer to investigate the ternary mixtures DOPC(1,2-dioleoyl-sn-glycero-3-phosphocholine)/bSM (porcine brainsphingomyelin)/Chol and POPC (1-palmitoyl-2-oleoyl-sn-glycero-3-phosphocholine)/bSM/Chol at high compositional resolution. We confirmed liquid coexistence for DOPC/bSM/Chol at 15 and 25C that melts by 35C, but in contrast to previous studies we detected no fluid-phase compositional heterogeneity for POPC/bSM/Chol from 5-35C. If domains exist, they must be smaller than the approximately 5 nm sensitivity provided by the fluorescent lipid analogs employed. We propose electron spin resonance and x-ray scattering for measuring whether liquid-phase compositional heterogeneity occurs for POPC/bSM/Chol. Understanding POPC/bSM/Chol phase behavior will provide a framework for investigating peptide/lipid interactions in a biologically relevant lipid mixture.

  16. Ternary fission of 260No in collinear configuration

    NASA Astrophysics Data System (ADS)

    Ismail, M.; Seif, W. M.; Hashem, A. S.; Botros, M. M.; Abdul-Magead, I. A. M.

    2016-09-01

    We investigate the collinear ternary fission of the 260No isotope. The calculations are performed in the framework of the three cluster model for all possible accompanied light particles of even mass numbers A = 4 - 52. The folding nuclear and Coulomb interaction potentials are used, based on the M3Y-Reid nucleon-nucleon force for the nuclear part. The deformation of the involved fragments and their relative orientations with respect to each other inside the fissioning nuclei are considered. Among all possible fragmentation channels, the suggested most probable channels are indicated as the ones showing a peak in the Q-value and a local minimum in the fragmentation potential, with respect to the mass and charge asymmetries. The indicated favored fragmentation channels from the approximate spherical calculations and those obtained after considering the deformations of the produced fragments are discussed in detail. In addition to the preferred heavy fragments of closed shells, favored prolate ones of high deformations appear when the nuclear deformations are taken into account. Among indicated fifty six favored channels, a collinear ternary fission of the 260No isotope is indicated to be most favored through the fragmentation channels of 15058Ce+410Be+40100Zr,60152Nd+412Be+3896Sr,58150Ce+614C+3896Sr,58148Ce+616C+3896Sr,54140Xe+822O+4098Zr,42106Mo+1848Ar+42106Mo and 41104Nb+2052Ca+41104Nb.

  17. Breast mass classification on mammograms using radial local ternary patterns.

    PubMed

    Muramatsu, Chisako; Hara, Takeshi; Endo, Tokiko; Fujita, Hiroshi

    2016-05-01

    Textural features can be useful in differentiating between benign and malignant breast lesions on mammograms. Unlike previous computerized schemes, which relied largely on shape and margin features based on manual contours of masses, textural features can be determined from regions of interest (ROIs) without precise lesion segmentation. In this study, therefore, we investigated an ROI-based feature, namely, radial local ternary patterns (RLTP), which takes into account the direction of edge patterns with respect to the center of masses for classification of ROIs for benign and malignant masses. Using an artificial neural network (ANN), support vector machine (SVM) and random forest (RF) classifiers, the classification abilities of RLTP were compared with those of the regular local ternary patterns (LTP), rotation invariant uniform (RIU2) LTP, texture features based on the gray level co-occurrence matrix (GLCM), and wavelet features. The performance was evaluated with 376 ROIs including 181 malignant and 195 benign masses. The highest areas under the receiver operating characteristic curves among three classifiers were 0.90, 0.77, 0.78, 0.86, and 0.83 for RLTP, LTP, RIU2-LTP, GLCM, and wavelet features, respectively. The results indicate the usefulness of the proposed texture features for distinguishing between benign and malignant lesions and the superiority of the radial patterns compared with the conventional rotation invariant patterns.

  18. Finding new ternary transition metal selenides and sulphides

    NASA Astrophysics Data System (ADS)

    Narayan, Awadhesh; Bhutani, Ankita; Eckstein, James N.; Shoemaker, Daniel P.; Wagner, Lucas K.

    The transition metal oxides exhibit many interesting physical properties, and have been explored in detail over time. Recently, the transition metal chalchogenides including selenium and sulfur have been of interest because of their correlated electron properties, as seen in the iron based superconductors and the layered transition metal dichalchogenides. However, the chalchogenides are much less explored than the oxides, and there is an open question of whether there may be new materials heretofore undiscovered. We perform a systematic combined theoretical and experimental search over ternary phase diagrams that are empty in the Inorganic Crystal Structure Database containing cations, transition metals, and one of selenium or sulfur. In these 27 ternary systems, we use a probabilistic model to reduce the likelihood of false negative predictions, which results in a list of 24 candidate materials. We then conduct a variety of synthesis experiments to check the candidate materials for stability. While the prediction method did obtain compositions that are stable, none of the candidate materials formed in our experiments. We come to the conclusion that these phase diagrams are either truly empty or have unusual structures or synthesis requirements. This work was supported by the Center for Emergent Superconductivity, Department of Energy Frontier Research Center under Grant No. DEAC0298CH1088.

  19. Interface Chemistry of Ternary Semiconductors: Local Morphology of the Hg(1-x)CdxTe-Cr Interface.

    DTIC Science & Technology

    1985-10-15

    a modified Bridgman method. Several oriented (110) posts (3x3x15 " mm3 ) were cut from the center of the cylindrical portion of a boule. Samples cut...levels. Deconvolution of two doublets was performed using the experimental lineshape of the Hg 5d and Cd 4d levels obtained from cleaved HgSe and CdSe ...lineshape of the Hg 5d and Cd 4d levels obtained from cleaved HgSe and CdSe samples. As an example, the result of the decomposition for the clean

  20. Computational Analysis of Core/Shell-like Structure Formation through Equilibrium Segregation in Ternary Compound Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Pandey, Sumeet C.; Singh, Tejinder; Mountziaris, Triantafillos J.; Maroudas, Dimitrios

    2010-03-01

    We present a computational analysis of equilibrium surface segregation in nanocrystals of InxGa1-xAs, ZnSe1-xTex, and ZnSe1-xSx. The analysis is based on coupled compositional, structural, and strain relaxation employing Monte Carlo and conjugate-gradient methods according to proper parameterizations within the valence-force-field (VFF) description. The VFF parameterizations are validated by comparisons of their segregation energy predictions with first-principles density functional theory (DFT) calculations. We report results for the equilibrium concentration distributions in the nanocrystals as a function of the compositional parameter x and nanocrystal size; the nanocrystal morphologies are polyhedral with distinct facets of low-index surface orientation as determined from DFT calculations of equilibrium crystal shapes. The results identify the particle-size and composition ranges that allow for assembly of core/shell-like nanocrystal structures with increased band-gap tunability.

  1. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  2. Back-side readout semiconductor photomultiplier

    DOEpatents

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  3. Semiconductor detectors in nuclear and particle physics

    SciTech Connect

    Rehak, P.; Gatti, E.

    1992-12-31

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported.

  4. Photocatalytic hydrogen production of the CdS/TiO2-WO3 ternary hybrid under visible light irradiation.

    PubMed

    Chen, Yi-Lin; Lo, Shang-Lien; Chang, Hsiang-Ling; Yeh, Hsiao-Mei; Sun, Liping; Oiu, Chunsheng

    2016-01-01

    An attractive and effective method for converting solar energy into clean and renewable hydrogen energy is photocatalytic water splitting over semiconductors. The study aimed at utilizing organic sacrificial agents in water, modeled by formic acid, in combination with visible light driven photocatalysts to produce hydrogen with high efficiencies. The photocatalytic hydrogen production of cadmium sulfide (CdS)/titanate nanotubes (TNTs) binary hybrid with specific CdS content was investigated. After visible light irradiation for 3 h, the hydrogen production rate of 25 wt% CdS/TNT achieved 179.35 μmol·h(-1). Thanks to the two-step process, CdS/TNTs-WO3 ternary hybrid can better promote the efficiency of water splitting compared with CdS/TNTs binary hybrid. The hydrogen production of 25 wt% CdS/TNTs-WO3 achieved 212.68 μmol·h(-1), under the same condition. Coating of platinum metal onto the WO3 could further promote the reaction. Results showed that 0.2 g 0.1 wt% Pt/WO3 + 0.2 g 25 wt% CdS/TNTs had the best hydrogen production rate of 428.43 μmol·h(-1). The resultant materials were well characterized by high-resolution transmission electron microscope, X-ray diffraction, scanning electron microscopy, and UV-Vis spectra.

  5. An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals.

    PubMed

    Chawla, Parul; Singh, Son; Sharma, Shailesh Narain

    2014-01-01

    In this work, we have demonstrated the structural and optoelectronic properties of the surface of ternary/quaternary (CISe/CIGSe/CZTSe) chalcopyrite nanocrystallites passivated by tri-n-octylphosphine-oxide (TOPO) and tri-n-octylphosphine (TOP) and compared their charge transfer characteristics in the respective polymer: chalcopyrite nanocomposites by dispersing them in poly(3-hexylthiophene) polymer. It has been found that CZTSe nanocrystallites due to their high crystallinity and well-ordered 3-dimensional network in its pristine form exhibit a higher steric- and photo-stability, resistance against coagulation and homogeneity compared to the CISe and CIGSe counterparts. Moreover, CZTSe nanocrystallites display efficient photoluminescence quenching as evident from the high value of the Stern-Volmer quenching constant (K SV) and eventually higher charge transfer efficiency in their respective polymer P3HT:CZTSe composites. We modelled the dependency of the charge transfer from the donor and the charge separation mechanism across the donor-acceptor interface from the extent of crystallinity of the chalcopyrite semiconductors (CISe/CIGSe/CZTSe). Quaternary CZTSe chalcopyrites with their high crystallinity and controlled morphology in conjunction with regioregular P3HT polymer is an attractive candidate for hybrid solar cells applications.

  6. An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals

    PubMed Central

    Chawla, Parul; Singh, Son

    2014-01-01

    Summary In this work, we have demonstrated the structural and optoelectronic properties of the surface of ternary/quaternary (CISe/CIGSe/CZTSe) chalcopyrite nanocrystallites passivated by tri-n-octylphosphine-oxide (TOPO) and tri-n-octylphosphine (TOP) and compared their charge transfer characteristics in the respective polymer: chalcopyrite nanocomposites by dispersing them in poly(3-hexylthiophene) polymer. It has been found that CZTSe nanocrystallites due to their high crystallinity and well-ordered 3-dimensional network in its pristine form exhibit a higher steric- and photo-stability, resistance against coagulation and homogeneity compared to the CISe and CIGSe counterparts. Moreover, CZTSe nanocrystallites display efficient photoluminescence quenching as evident from the high value of the Stern–Volmer quenching constant (K SV) and eventually higher charge transfer efficiency in their respective polymer P3HT:CZTSe composites. We modelled the dependency of the charge transfer from the donor and the charge separation mechanism across the donor–acceptor interface from the extent of crystallinity of the chalcopyrite semiconductors (CISe/CIGSe/CZTSe). Quaternary CZTSe chalcopyrites with their high crystallinity and controlled morphology in conjunction with regioregular P3HT polymer is an attractive candidate for hybrid solar cells applications. PMID:25161859

  7. Synthesis and characterization of LiZnP and LiZnAs semiconductor material

    NASA Astrophysics Data System (ADS)

    Montag, Benjamin W.; Reichenberger, Michael A.; Arpin, Kevin R.; Sunder, Madhana; Nelson, Kyle A.; Ugorowski, Philip B.; McGregor, Douglas S.

    2015-02-01

    Research for a reliable solid-state semiconductor neutron detector continues because such a device has not been developed, and would have greater efficiency, than present-day gas-filled 3He and 10BF3 neutron detectors. Further, a semiconductor neutron detector would be more compact and rugged than most gas-filled or scintillator neutron detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, a larger yield than the 10B(n,α)7Li, and is easily identified above background radiation interactions. Hence, devices composed of either natural Li (naturally 7.5% 6Li) or enriched 6Li (approximately 95% 6Li) may provide a semiconductor material for compact high-efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, known as Nowotny-Juza compounds (AIBIICV), are desirable for their cubic crystal structure and semiconducting electrical properties. These compounds were originally studied for photonic applications. In the present work, Equimolar portions of Li, Zn, and P or As were sealed under vacuum (10-6 Torr) in quartz ampoules with a boron nitride lining, and loaded into a compounding furnace. The ampoule was heated to 200 °C to form the Li-Zn alloy, subsequently heated to 560 °C to form the ternary compound, LiZnP or LiZnAs, and finally annealed to promote crystallization. The chemical composition of the synthesized starting material was confirmed at Galbraith Laboratories, Inc. by Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES), which showed the compounds can be reacted in equal ratios, 1-1-1, to form ternary compounds. Recent additions to the procedure have produced higher yields, and greater synthesis reliability. Synthesized powders were also characterized by x-ray diffraction, where lattice constants of 5.751±.001 Å and 5.939±.002 Å for LiZnP and LiZnAs, respectively, were determined.

  8. Dimensional crossover in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-08-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

  9. Dimensional crossover in semiconductor nanostructures

    PubMed Central

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-01-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5–10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies. PMID:27577091

  10. Cameras for semiconductor process control

    NASA Technical Reports Server (NTRS)

    Porter, W. A.; Parker, D. L.

    1977-01-01

    The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

  11. Semiconductor electrolyte photovoltaic energy converter

    NASA Technical Reports Server (NTRS)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  12. Squeezing of phonoritons in semiconductors

    NASA Astrophysics Data System (ADS)

    Huong, N. Q.; Hau, N. N.; Birman, J. L.

    2007-12-01

    If a semiconductor sample is illuminated by hight-intensity electro-magnetic radiation near the resonance, the occupation number of polaritons in the same mode is large and the interaction between polaritons and phonons become very important. This interaction leads to the formation of a new kind of elementary excitation called phonoriton, which actually is a coherent superposition of excitons, photons, and longitudinal acoustic phonons under Brillouin scattering of an intense polariton. The phonoritons have been studied theoretically and experimentally and have been found in Cu2O. In this work we discuss the squeezing of phonoritons inside semiconductors from a theoretical point of view. We found the squeezed states, or so called 'low-noise' states- the states of reduced quantum noise with reducing effect of vacuum fluctuation, for phonoritons. It shows that the phonoritons are intrinsically squeezed. From our results we also have the possibility to tune the squeeze amplitude, what is important both theoretically and experimentally.

  13. Semiconductor metafilms devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Brongersma, Mark L.

    2016-09-01

    Many conventional optoelectronic devices consist of thin, stacked films of metals and semiconductors. In this presentation, I will demonstrate how one can improve the performance of such devices by nano-structuring the constituent layers at length scales below the wavelength of light. The resulting metafilms and metasurfaces offer opportunities to dramatically modify the optical transmission, absorption, reflection, and refraction properties of device layers. This is accomplished by encoding the optical response of nanoscale resonant building blocks into the effective properties of the films and surfaces. To illustrate these points, I will show how nanopatterned metal and semiconductor layers may be used to enhance the performance of solar cells, photodetectors, and enable new imaging technologies. I will also demonstrate how the use of active nanoscale building blocks can facilitate the creation of active metafilm devices.

  14. Band anticrossing effects in highly mismatched semiconductor alloys

    SciTech Connect

    Wu, Junqiao

    2002-01-01

    occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of ~1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

  15. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  16. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  17. Lasing in subwavelength semiconductor nanopatches

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit M.; Yu, Kyoungsik; Wu, Ming C.

    2011-01-01

    Subwavelength semiconductor nanopatch lasers were analyzed, fabricated and characterized. Lasing was achieved in cylindrical and rectangular metallodielectric nanopatch geometries. The two smallest moderate quality factor modes of cylindrical cavities, the 'electric-' and 'magnetic-' dipole-like modes, successfully lased with physical volumes as small as 0.75 (λ0/n)3. Polarization control in nanopatch geometries is successfully demonstrated in anisotropic rectangular nanopatch structures.

  18. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  19. Optoelectronics with 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  20. Technology Roadmaps for Compound Semiconductors

    PubMed Central

    Bennett, Herbert S.

    2000-01-01

    The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615