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Sample records for inas nanowire arrays

  1. Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoye; Yang, Wenyuan; Wang, Baojun; Ji, Xianghai; Xu, Shengyong; Wang, Wei; Chen, Qing; Yang, Tao

    2017-02-01

    We have investigated the influence of nanohole size on selective-area growth (SAG) of InAs nanowire (NW) arrays on Si(111) substrates by metal-organic chemical vapor deposition. The growth of well-defined and position-controlled InAs NW arrays with united vertical orientation can be achieved on the patterned substrates with a certain range of nanohole size, which paves the way for the fabrication of high-electron-mobility and surrounding-gate transistor arrays using NWs as channels. Moreover, it is found that more than one NW are increasingly likely grown per nanohole as the nanohole size increases, and the NWs become increasingly thin and short. This is considered to be due to the supersaturation of adsorbed species in the nanohole and the intense competition for adatoms among multiple NWs per nanohole.

  2. Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

    PubMed Central

    Wook Shin, Hyun; Jun Lee, Sang; Gun Kim, Doo; Bae, Myung-Ho; Heo, Jaeyeong; Jin Choi, Kyoung; Jun Choi, Won; Choe, Jeong-woo; Cheol Shin, Jae

    2015-01-01

    One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4–3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108  cm·Hz1/2/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics. PMID:26035286

  3. Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hertenberger, S.; Rudolph, D.; Bichler, M.; Finley, J. J.; Abstreiter, G.; Koblmüller, G.

    2010-12-01

    We investigated the interwire distance dependence on the growth kinetics of vertical, high-yield InAs nanowire arrays on Si(111) grown by catalyst-free selective area molecular beam epitaxy (MBE). Utilizing lithographically defined SiO2 nanomasks on Si(111) with regular hole patterns, catalyst-free and site-selective growth of vertically (111)-oriented InAs nanowires was achieved with very high yields of ˜90 percent. Interestingly, the yield of vertically ordered nanowires was independent of the interwire distance and the initial growth stages. Significant size variation in the nanowires was found to depend critically on the interwire distance and growth time. Two growth regimes were identified—(i) a competitive growth regime with shorter and thinner nanowires for narrow interwire distances and (ii) a diffusion-limited growth regime for wider distances, providing good estimates for the surface diffusion lengths. Surprisingly, despite these size-dependent effects the nanowire geometries remained unaltered with uniform, almost nontapered morphologies even over large variation in nanowire density (˜mid-106-109 cm-2 range). X-ray diffraction further confirmed the vertical (111) directionality with low crystal tilt by rocking curve widths (ω scans) as low as ˜0.6°. These findings demonstrate the capability to precisely tailor the position and size of well-oriented III-V semiconductor nanowires through noncatalytic MBE selective area growth and provide an important step toward fully integrated, uniform vertical III-V nanowire array-on-Si devices.

  4. Negative photoconductivity of InAs nanowires.

    PubMed

    Han, Yuxiang; Zheng, Xiao; Fu, Mengqi; Pan, Dong; Li, Xing; Guo, Yao; Zhao, Jianhua; Chen, Qing

    2016-01-14

    Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs.

  5. Size self-scaling effect in stacked InAs /InAlAs nanowire multilayers

    NASA Astrophysics Data System (ADS)

    Sun, Z. Z.; Yoon, S. F.; Wu, J.; Wang, Z. G.

    2004-11-01

    Size self-scaling effect in stacked InAs /In0.52Al0.48As nanowires on InP substrates is revealed, i.e., the base width and height of the InAs nanowires have clear proportional dependence on thickness of the InAlAs spacer layer used in different samples. The photoluminescence wavelength from different samples, which varies between 1.3 and 1.9μm, is also found closely correlated to the size self-scaling effect. This phenomenon can be well explained in the context of formation mechanism and growth features of the InAs /InAlAs nanowire arrays. The finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures.

  6. Hall effect measurements on InAs nanowires

    SciTech Connect

    Bloemers, Ch.; Grap, T.; Lepsa, M. I.; Moers, J.; Gruetzmacher, D.; Lueth, H.; Trellenkamp, St.; Schaepers, Th.

    2012-10-08

    We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.

  7. Hall effect measurements on InAs nanowires

    NASA Astrophysics Data System (ADS)

    Blömers, Ch.; Grap, T.; Lepsa, M. I.; Moers, J.; Trellenkamp, St.; Grützmacher, D.; Lüth, H.; Schäpers, Th.

    2012-10-01

    We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comparison with those measured by the common field-effect technique. The results are used to evaluate quantitatively the charging effect of the interface and surface states.

  8. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  9. Metal free growth and characterization of InAs1-xPx nanowires

    SciTech Connect

    Mandl, Bernhard; Stangl, Julian; Brehm, Moritz; Fromherz, Thomas; Bauer, Guenther; Maartensson, Thomas; Samuelson, Lars; Seifert, Werner

    2007-04-10

    InAs nanowires have been grown without the use of Au or other metal particles as catalyst by metal-organic vapor phase epitaxy. The nanowires growth is initiated by a thin layer of SiOx. The wires exhibit a non-tapered shape with a hexagonal cross section. In addition to InAs also InAs1-xPx wires are grown and the incorporation of P is studied by photoluminescence.

  10. Metal free growth and characterization of InAs1-xPx nanowires

    NASA Astrophysics Data System (ADS)

    Mandl, Bernhard; Stangl, Julian; Mârtensson, Thomas; Brehm, Moritz; Fromherz, Thomas; Bauer, Günther; Samuelson, Lars; Seifert, Werner

    2007-04-01

    InAs nanowires have been grown without the use of Au or other metal particles as catalyst by metal-organic vapor phase epitaxy. The nanowires growth is initiated by a thin layer of SiOx. The wires exhibit a non-tapered shape with a hexagonal cross section. In addition to InAs also InAs1-xPx wires are grown and the incorporation of P is studied by photoluminescence.

  11. Defect-free thin InAs nanowires grown using molecular beam epitaxy.

    PubMed

    Zhang, Zhi; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2016-01-21

    In this study, we designed a simple method to achieve the growth of defect-free thin InAs nanowires with a lateral dimension well below their Bohr radius on different substrate orientations. By depositing and annealing a thin layer of Au thin film on a (100) substrate surface, we have achieved the growth of defect-free uniform-sized thin InAs nanowires. This study provides a strategy to achieve the growth of pure defect-free thin nanowires.

  12. Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire.

    PubMed

    Han, Yuxiang; Fu, Mengqi; Tang, Zhiqiang; Zheng, Xiao; Ji, Xianghai; Wang, Xiaoye; Lin, Weijian; Yang, Tao; Chen, Qing

    2017-01-25

    Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal-organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO2, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.

  13. Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growth.

    PubMed

    Dayeh, Shadi A; Yu, Edward T; Wang, Deli

    2009-05-01

    We report new fundamental insights into InAs nanowire (NW) nucleation and evolution on InAs (111)B surfaces using organometallic vapor phase epitaxy and present the first experimental demonstration of two distinct NW growth regimes, defined by the direction of substrate-NW adatom exchange, that lead to nonlinear growth rates. We show that the NW elongation rate and morphology in these two growth regimes are governed by the relative difference between the In adatom diffusion lengths on the growth substrate surface and on the NW sidewalls, resulting in strong growth rate dependence on the NW length. These results indicate that surface solid-phase diffusion of In adatoms is a key process in InAs NW growth, which is also supported by diameter-dependent growth rates. These developments enable rational growth of axial and radial NW heterostructures.

  14. InAs nanowire formation on InP(001)

    SciTech Connect

    Parry, H. J.; Ashwin, M. J.; Jones, T. S.

    2006-12-01

    The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along <110> and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands.

  15. Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

    PubMed

    Soo, M Teng; Zheng, Kun; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Zou, Jin

    2016-07-13

    Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers.

  16. Fabrication and optical properties of multishell InAs quantum dots on GaAs nanowires

    SciTech Connect

    Yan, Xin; Zhang, Xia Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2015-02-07

    Hybrid nanostructures combining nanowires with quantum dots promote the development of nanoelectronic and nanophotonic devices with integrated functionalities. In this work, we present a complex nanostructure with multishell quantum dots grown on nanowires. 1–4 shells of Stranski-Krastanov InAs quantum dots are grown on the sidewalls of GaAs nanowires by metal organic chemical vapor deposition. Different dot shells are separated by 8 nm GaAs spacer shells. With increasing the number of shells, the quantum dots become sparser and tend to align in one array, which is caused by the shrinkage of facets on which dots prefer to grow as well as the strain fields produced by the lower set of dots which influences the migration of In adatoms. The size of quantum dots increases with the increase of shell number due to enhanced strain fields coupling. The spectra of multishell dots exhibit multiwavelength emission, and each peak corresponds to a dot shell. This hybrid structure may serve as a promising element in nanowire intermediate band solar cells, infrared nanolasers, and photodetectors.

  17. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    NASA Astrophysics Data System (ADS)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.; Gejl, Aske; Zeng, Lunjie; Johnson, Erik; Olsson, Eva; Nygård, Jesper; Krogstrup, Peter

    2016-09-01

    Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.

  18. Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dick, Kimberly A.

    2012-06-01

    Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.

  19. MBE growth of self-assisted InAs nanowires on graphene

    NASA Astrophysics Data System (ADS)

    Kang, Jung-Hyun; Ronen, Yuval; Cohen, Yonatan; Convertino, Domenica; Rossi, Antonio; Coletti, Camilla; Heun, Stefan; Sorba, Lucia; Kacman, Perla; Shtrikman, Hadas

    2016-11-01

    Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ∼50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30° orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, multiple Andreev reflections were observed, and an inelastic scattering length of about 900 nm was derived.

  20. Heterogeneous nucleation of catalyst-free InAs nanowires on silicon

    NASA Astrophysics Data System (ADS)

    Gomes, U. P.; Ercolani, D.; Zannier, V.; Battiato, S.; Ubyivovk, E.; Mikhailovskii, V.; Murata, Y.; Heun, S.; Beltram, F.; Sorba, L.

    2017-02-01

    We report on the heterogeneous nucleation of catalyst-free InAs nanowires on Si(111) substrates by chemical beam epitaxy. We show that nanowire nucleation is enhanced by sputtering the silicon substrate with energetic particles. We argue that particle bombardment introduces lattice defects on the silicon surface that serve as preferential nucleation sites. The formation of these nucleation sites can be controlled by the sputtering parameters, allowing the control of nanowire density in a wide range. Nanowire nucleation is accompanied by unwanted parasitic islands, but careful choice of annealing and growth temperature allows us to strongly reduce the relative density of these islands and to realize samples with high nanowire yield.

  1. Design issue analysis for InAs nanowire tunnel FETs

    NASA Astrophysics Data System (ADS)

    Sylvia, Somaia S.; Khayer, M. Abul; Alam, Khairul; Lake, Roger K.

    2011-10-01

    InAs nanowire-tunnel eld eect transistors (NW-TFETs) are being considered for future, beyond-Si electronics. They oer the possibility of beating the ideal thermal limit to the inverse subthreshold slope of 60 mV/dec and thus promise reduced power operation. However, whether the tunneling can provide sucient on-current for high-speed operation is an open question. In this work, for a p-i-n device, we investigate the source doping level necessary to achieve a target on-current (1 A) while maintaining a high ION=IOFF ratio (1106) for a range of NW diameters (2 -8 nm). With a xed drain bias voltage and a maximum gate overdrive, we compare the performance in terms of the inverse subthreshold slope (SS) and ION=IOFF ratio as a function of NW- diameter and source doping. As expected, increasing the source doping level increases the current as a result of the reduced screening length and increased electric eld at source which narrows the tunnel barrier. However, since the degeneracy is also increasing, it moves the eective energy window for tunneling away from the barrier where it is the narrowest. This, in turn, tends to decrease the current for a given voltage which, along with the consideration of inverse SS and ION=IOFF ratio leads to an optimum choice of source doping.

  2. Harmonic Generation in InAs Nanowire Double Quantum Dots

    NASA Astrophysics Data System (ADS)

    Schroer, M. D.; Jung, M.; Petersson, K. D.; Petta, J. R.

    2012-02-01

    InAs nanowires provide a useful platform for investigating the physics of confined electrons subjected to strong spin-orbit coupling. Using tunable, bottom-gated double quantum dots, we demonstrate electrical driving of single spin resonance.ootnotetextS. Nadj-Perge et al., Nature 468, 1084 (2010)^,ootnotetextM.D. Schroer et al., Phys. Rev. Lett. 107, 176811 (2011) We observe a standard spin response when the applied microwave frequency equals the Larmour frequency f0. However, we also observe an anomalous signal at frequencies fn= f0/ n for integer n up to n ˜5. This is equivalent to generation of harmonics of the spin resonance field. While a f0/2 signal has observed,ootnotetextE.A. Laird et al., Phys. Rev. Lett. 99, 246601 (2007) we believe this is the first observation of higher harmonics in spin resonance. Possible mechanisms will be discussed.ootnotetextE.I. Rashba, arXiv:1110.6569 (2011) Acknowledgements: Research supported by the Sloan and Packard Foundations, the NSF, and Army Research Office.

  3. Structural characterization of nanowires and nanowire arrays

    NASA Astrophysics Data System (ADS)

    Becker, Catherine Rose

    synthesis of copper nanowires. The results of this research provide a link between the synthesis and performance of nanowire arrays and will aid in their rapid optimization for thermoelectric applications.

  4. Self-catalyzed Growth of InAs Nanowires on InP Substrate

    NASA Astrophysics Data System (ADS)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2017-01-01

    We report on the self-catalyzed growth of InAs nanowires on InP substrate by metal-organic chemical vapor deposition. At a moderate V/III ratio, tapered nanowires are obtained, suggesting a strong surface diffusion effect. Dense twin faults are observed perpendicular to the nanowire growth direction due to the fluctuation of In atoms in the droplet originating from the surface diffusion effect. At a lower V/III ratio, the nanowires exhibit kinking, which is associated with a high adhesion due to a large sticking coefficient of TMIn. The twin faults are dramatically suppressed and even completely eliminated in the NW branch after kinking, which is attributed to a stable In supply with a negligible diffusion effect. This work provides a method for the fabrication of defect-free InAs nanowires.

  5. Understanding self-aligned planar growth of InAs nanowires.

    PubMed

    Zi, Yunlong; Jung, Kyooho; Zakharov, Dmitri; Yang, Chen

    2013-06-12

    Semiconducting nanowires have attracted lots of attention because of their potential applications. Compared with free-standing nanowires, self-aligned planar nanowires grown epitaxially on the substrate have shown advantageous properties such as being twin defect free and ready for device fabrication, opening potentials for the large-scale device applications. Understanding of planar nanowire growth, which is essential for selective growth of planar vs free-standing wires, is still limited. In this paper, we reported different growth behaviors for self-aligned planar and free-standing InAs nanowires under identical growth conditions. We present a new model based on a revised Gibbs–Thomson equation for the planar nanowires. Using this model, we predicted and successfully confirmed through experiments that higher arsenic vapor partial pressure promoted free-standing InAs nanowire growth. A smaller critical diameter for planar nanowire growth was predicted and achieved experimentally. Successful control and understanding of planar and free-standing nanowire growth established in our work opens up the potential of large-scale integration of self-aligned nanowires for practical device applications.

  6. Monitoring structural influences on quantum transport in InAs nanowires

    NASA Astrophysics Data System (ADS)

    Frielinghaus, Robert; Flöhr, Kilian; Sladek, Kamil; Weirich, Thomas E.; Trellenkamp, Stefan; Hardtdegen, Hilde; Schäpers, Thomas; Schneider, Claus M.; Meyer, Carola

    2012-08-01

    A sample design that allows for quantum transport and transmission electron microscopy (TEM) on individual suspended nanostructures is used to investigate moderately n-type doped InAs nanowires (NWs). The nanowires were grown by metal organic vapor phase epitaxy. Universal conductance fluctuations in the nanowires are investigated at temperatures down to 0.35 K. These fluctuations show two different temperature dependences. The very same nanowire segments investigated in transport are subsequently analyzed by TEM revealing crystal phase mixing. However, we find no correspondence between the atomic structure of the wires and the temperature dependences of the conductance fluctuations.

  7. Catalyst-free growth of InAs nanowires on Si (111) by CBE.

    PubMed

    Gomes, U P; Ercolani, D; Sibirev, N V; Gemmi, M; Dubrovskii, V G; Beltram, F; Sorba, L

    2015-10-16

    We investigate a growth mechanism which allows for the fabrication of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. Our growth protocol consists of successive low-temperature (LT) nucleation and high-temperature growth steps. This method produces non-tapered InAs nanowires with controllable length and diameter. We show that InAs nanowires evolve from the islands formed during the LT nucleation step and grow truly catalyst-free, without any indium droplets at the tip. The impact of different growth parameters on the nanowire morphology is presented. In particular, good control over nanowire aspect ratio is demonstrated. A better understanding of the growth process is obtained through the development of a theoretical model combining the diffusion-induced growth scenario with some specific features of the catalyst-free growth mechanism, along with the analysis of the V/III flow ratio influencing material incorporation. As a result, we perform a full mapping of the nanowire morphology versus growth parameters which provides useful general guidelines on the self-induced formation of III-V nanowires on silicon.

  8. Photoelectrochemistry of Semiconductor Nanowire Arrays

    SciTech Connect

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  9. Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts

    SciTech Connect

    Feng, Boyong; Huang, Shaoyun E-mail: hqxu@pku.edu.cn; Wang, Jiyin; Pan, Dong; Zhao, Jianghua; Xu, H. Q. E-mail: hqxu@pku.edu.cn

    2016-02-07

    Understanding of the Schottky barriers formed at metal contact-InAs nanowire interfaces is of great importance for the development of high-performance InAs nanowire nanoelectronic and quantum devices. Here, we report a systematical study of InAs nanowire field-effect transistors (FETs) and the Schottky barrier heights formed at the contact-nanowire interfaces. The InAs nanowires employed are grown by molecular beam epitaxy and are high material quality single crystals, and the devices are made by directly contacting the nanowires with a series of metals of different work functions. The fabricated InAs nanowire FET devices are characterized by electrical measurements at different temperatures and the Schottky barrier heights are extracted from the measured temperature and gate-voltage dependences of the channel current. We show that although the work functions of the contact metals are widely spread, the Schottky barrier heights are determined to be distributed over 35–55 meV, showing a weak but not negligible dependence on the metals. The deduced Fermi level in the InAs nanowire channels is found to be in the band gap and very close to the conduction band. The physical origin of the results is discussed in terms of Fermi level pinning by the surface states of the InAs nanowires and a shift in pinned Fermi level induced by the metal-related interface states.

  10. Single electron pumping in InAs nanowire double quantum dots

    NASA Astrophysics Data System (ADS)

    Fuhrer, A.; Fasth, C.; Samuelson, L.

    2007-07-01

    Closely spaced local gate electrodes are used to electrically define a double quantum dot along an InAs nanowire crystal. By applying a periodic pulse sequence to two plunger gate electrodes controlling the double quantum dot charge configuration, the device is operated as a single electron pump. The authors find that within measurement accuracy, the pumping current equals one electron per cycle for frequencies up to 2MHz, demonstrating the suitability of nanowire based quantum dots for pumping applications.

  11. Carrier transport in high mobility InAs nanowire junctionless transistors.

    PubMed

    Konar, Aniruddha; Mathew, John; Nayak, Kaushik; Bajaj, Mohit; Pandey, Rajan K; Dhara, Sajal; Murali, K V R M; Deshmukh, Mandar M

    2015-03-11

    The ability to understand and model the performance limits of nanowire transistors is the key to the design of next generation devices. Here, we report studies on high-mobility junctionless gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm(2)/V·s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.

  12. Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

    NASA Astrophysics Data System (ADS)

    Tchernycheva, Maria; Travers, Laurent; Patriarche, Gilles; Glas, Frank; Harmand, Jean-Christophe; Cirlin, George E.; Dubrovskii, Vladimir G.

    2007-11-01

    The Au-assisted molecular beam epitaxial growth of InAs nanowires is discussed. In situ reflection high-energy electron diffraction observations of phase transitions of the catalyst particles indicate that they can be liquid below the eutectic point of the Au-In alloy. The temperature range where the catalyst can be liquid covers the range where we observed nanowire formation (380-430 °C). The variation of nanowire growth rate with temperature is investigated. Pure axial nanowire growth is observed at high temperature while mixed axial/lateral growth occurs at low temperature. The change of the InAs nanowire shape with growth duration is studied. It is shown that significant lateral growth of the lower part of the nanowire starts when its length exceeds a critical value, so that their shape presents a steplike profile along their axis. A theoretical model is proposed to explain the nanowire morphology as a result of the axial and lateral contributions of the nanowire growth.

  13. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.

    PubMed

    Tomioka, Katsuhiro; Izhizaka, Fumiya; Fukui, Takashi

    2015-11-11

    III-V compound semiconductor and Ge are promising channel materials for future low-power and high-performance integrated circuits. A heterogeneous integration of these materials on the same platform, however, raises serious problem owing to a huge mismatch of carrier mobility. We proposed direct integration of perfectly vertically aligned InAs nanowires on Ge as a method for new alternative integrated circuits and demonstrated a high-performance InAs nanowire-vertical surrounding-gate transistor. Virtually 100% yield of vertically aligned InAs nanowires was achieved by controlling the initial surface of Ge and high-quality InAs nanowires were obtained regardless of lattice mismatch (6.7%). The transistor performance showed significantly higher conductivity with good gate control compared to Si-based conventional field-effect transistors: the drain current was 0.65 mA/μm, and the transconductance was 2.2 mS/μm at drain-source voltage of 0.50 V. These demonstrations are a first step for building alternative integrated circuits using vertical III-V/multigate planar Ge FETs.

  14. Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

    NASA Astrophysics Data System (ADS)

    Park, Dong Woo; Bin Ji, Young; Hwang, Jehwan; Lee, Cheul-Ro; Lee, Sang Jun; Kim, Jun Oh; Noh, Sam Kyu; Oh, Seung Jae; Kim, Sang-Hoon; Jeon, Tae-In; Jeong, Kwang-Un; Kim, Jin Soo

    2016-10-01

    We report improvement of terahertz (THz) wave radiation for Si-based catalyst-free InAs nanowires (NWs) by simple dipping into tap water (DTW). In addition, the possibility of using InAs NWs as a cost-effective method for biomedical applications is discussed by comparison to bulk InAs. The peak-to-peak current signals (PPCSs) of InAs NWs measured from THz time-domain spectroscopy increased with increasing NW height. For example, the PPCS of 10 μm-long InAs NWs was 2.86 times stronger than that of 2.1 μm-long NWs. The THz spectra of the InAs NWs obtained by applying a fast Fourier transformation to the current signals showed a main frequency of 0.5 THz, which can be applied to a variety of medical imaging systems. After the DTW process, structural variation was not observed for 2.1 μm-long InAs NWs. However, the top region of several InAs NWs with heights of 4.6 and 5.8 μm merged into a conical structure. InAs NWs with a height of 10 μm resulted in a bundle feature forming above the conical shape, where the length of bundle region was 4 μm. After the DTW process, the PPCS for 10 μm-long InAs NWs increased by 15 percent compared to that of the as-grown case.

  15. Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water

    PubMed Central

    Park, Dong Woo; Bin Ji, Young; Hwang, Jehwan; Lee, Cheul-Ro; Lee, Sang Jun; Kim, Jun Oh; Noh, Sam Kyu; Oh, Seung Jae; Kim, Sang-Hoon; Jeon, Tae-In; Jeong, Kwang-Un; Kim, Jin Soo

    2016-01-01

    We report improvement of terahertz (THz) wave radiation for Si-based catalyst-free InAs nanowires (NWs) by simple dipping into tap water (DTW). In addition, the possibility of using InAs NWs as a cost-effective method for biomedical applications is discussed by comparison to bulk InAs. The peak-to-peak current signals (PPCSs) of InAs NWs measured from THz time-domain spectroscopy increased with increasing NW height. For example, the PPCS of 10 μm-long InAs NWs was 2.86 times stronger than that of 2.1 μm-long NWs. The THz spectra of the InAs NWs obtained by applying a fast Fourier transformation to the current signals showed a main frequency of 0.5 THz, which can be applied to a variety of medical imaging systems. After the DTW process, structural variation was not observed for 2.1 μm-long InAs NWs. However, the top region of several InAs NWs with heights of 4.6 and 5.8 μm merged into a conical structure. InAs NWs with a height of 10 μm resulted in a bundle feature forming above the conical shape, where the length of bundle region was 4 μm. After the DTW process, the PPCS for 10 μm-long InAs NWs increased by 15 percent compared to that of the as-grown case. PMID:27782220

  16. Effects of crystal phase mixing on the electrical properties of InAs nanowires.

    PubMed

    Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dey, Anil W; Dick, Kimberly A

    2011-06-08

    We report a systematic study of the relationship between crystal quality and electrical properties of InAs nanowires grown by MOVPE and MBE, with crystal structure varying from wurtzite to zinc blende. We find that mixtures of these phases can exhibit up to 2 orders of magnitude higher resistivity than single-phase nanowires, with a temperature-activated transport mechanism. However, it is also found that defects in the form of stacking faults and twin planes do not significantly affect the resistivity. These findings are important for nanowire-based devices, where uncontrolled formation of particular polytype mixtures may lead to unacceptable device variability.

  17. Aluminum Nanowire Arrays via Directed Assembly.

    PubMed

    Nesbitt, Nathan T; Merlo, Juan M; Rose, Aaron H; Calm, Yitzi M; Kempa, Krzysztof; Burns, Michael J; Naughton, Michael J

    2015-11-11

    Freestanding and vertically-oriented metal nanowire arrays have potential utility in a number of applications, but presently lack a route to fabrication. Template-based techniques, such as electrodeposition into lithographically defined nanopore arrays, have produced well-ordered nanowire arrays with a maximum pitch of about 2 μm; such nanowires, however, tend to cluster due to local attractive forces. Here, we modify this template fabrication method to produce well-ordered, vertically-oriented, freestanding Al nanowire arrays, etched from an underlying Al substrate, with highly tunable pitch. In addition, optical measurements demonstrated that the nanowires support the propagation of surface plasmon polaritons.

  18. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

    PubMed Central

    Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

    2017-01-01

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices. PMID:28393845

  19. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.

    PubMed

    Anyebe, Ezekiel A; Sandall, I; Jin, Z M; Sanchez, Ana M; Rajpalke, Mohana K; Veal, Timothy D; Cao, Y C; Li, H D; Harvey, R; Zhuang, Q D

    2017-04-10

    The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.

  20. A transmission line method for evaluation of vertical InAs nanowire contacts

    NASA Astrophysics Data System (ADS)

    Berg, M.; Svensson, J.; Lind, E.; Wernersson, L.-E.

    2015-12-01

    In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 °C for 1 min, with specific contact resistance values reaching down to below 1 Ω µm2.

  1. A transmission line method for evaluation of vertical InAs nanowire contacts

    SciTech Connect

    Berg, M. Svensson, J. Lind, E. Wernersson, L.-E.

    2015-12-07

    In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 °C for 1 min, with specific contact resistance values reaching down to below 1 Ω µm{sup 2}.

  2. Correlating the nanostructure and electronic properties of InAs nanowires

    NASA Astrophysics Data System (ADS)

    Schroer, M. D.; Petta, J. R.

    2010-03-01

    III-V nanowires have many attractive electrical properties, but only recently has control over the planar defect density been achieved. We correlate the nanowire defect structure with electronic properties by growing InAs nanowires with a growth temperature tunable defect density in a home-built MOVPE reactor^1. Multiple field effect transistors (FETs) were fabricated along the length of these nanowires to allow the measurement of field-effect mobility as a function of defect density^2. Nominally defect-free segments have a 4.2 K mobility up to ˜4x higher than defect-rich segments on the same nanowire and approach μ=16,000-18,000 cm^2/V s, comparable to values reported for InAs/InP core shell FETs^3. At low temperatures, the presence of these defects leads to the accidental formation of quantum dots along the length of the wire. These results suggest that control of the rotational twinning defect density in InAs nanowires will be of crucial importance in order to allow the fabrication of locally gated nanowire quantum dots.References:^1 M. D. Schroer, S. Y. Xu, A. Bergman and J. R. Petta, arXiv:0911.0845v1^2 M. D. Schroer and J. R. Petta, (in preparation)^3 X. Jiang, Q. Xiong, S. Nam, F. Qian, Y. Li and C. M. Lieber, Nano Lett. 7, 3214 (2007)

  3. Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires.

    PubMed

    Fu, Mengqi; Tang, Zhiqiang; Li, Xing; Ning, Zhiyuan; Pan, Dong; Zhao, Jianhua; Wei, Xianlong; Chen, Qing

    2016-04-13

    We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

  4. Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers.

    PubMed

    Cheung, Ho-Yuen; Yip, SenPo; Han, Ning; Dong, Goufa; Fang, Ming; Yang, Zai-xing; Wang, Fengyun; Lin, Hao; Wong, Chun-Yuen; Ho, Johnny C

    2015-07-28

    In recent years, InAs nanowires have been demonstrated with the excellent electron mobility as well as highly efficient near-infrared and visible photoresponse at room temperature. However, due to the presence of a large amount of surface states that originate from the unstable native oxide, the fabricated nanowire transistors are always operated in the depletion mode with degraded electron mobility, which is not energy-efficient. In this work, instead of the conventional inorganic sulfur or alkanethiol surface passivation, we employ aromatic thiolate (ArS(-))-based molecular monolayers with controllable molecular design and electron density for the surface modification of InAs nanowires (i.e., device channels) by simple wet chemistry. More importantly, besides reliably improving the device performances by enhancing the electron mobility and the current on-off ratio through surface state passivation, the device threshold voltage (VTh) can also be modulated by varying the para-substituent of the monolayers such that the molecule bearing electron-withdrawing groups would significantly shift the VTh towards the positive region for the enhancement mode device operation, in which the effect has been quantified by density functional theory calculations. These findings reveal explicitly the efficient modulation of the InAs nanowires' electronic transport properties via ArS(-)-based molecular monolayers, which further elucidates the technological potency of this ArS(-) surface treatment for future nanoelectronic device fabrication and circuit integration.

  5. InAs(1-x)P(x) nanowires grown by catalyst-free molecular-beam epitaxy.

    PubMed

    Isakov, I; Panfilova, M; Sourribes, M J L; Tileli, V; Porter, A E; Warburton, P A

    2013-03-01

    We report on the self-catalysed growth of vertical InAs(1-x)P(x) nanowires on Si(111) substrates by solid-source molecular-beam epitaxy. High-resolution transmission electron microscopy revealed the mixed wurtzite and zincblende structure of the nanowires. Energy dispersive x-ray spectroscopy and x-ray diffraction measurements were used to study the phosphorus content x in the InAs(1-x)P(x) nanowires, which was shown to be in the range 0-10 %. The dependence of phosphorus incorporation in the nanowires on the phosphorus flux in the growth chamber was investigated. The incorporation rate coefficients of As and P in InAs(1x)P(x) nanowires were found to be in the ratio 10 ± 5 to 1.

  6. Observation of coherent electron transport in self-catalysed InAs and InAs1-xSbx nanowires grown on silicon

    NASA Astrophysics Data System (ADS)

    Sourribes, M. J. L.; Isakov, I.; Panfilova, M.; Warburton, P. A.

    2017-01-01

    We report the observation of phase coherent transport in catalyst-free InAs and InAs1-xSbx nanowires grown by molecular beam epitaxy on silicon (111) substrates. We investigate three different methods to gain information on the phase coherence length of the nanowires: first through the study of universal conductance fluctuations as a function of both magnetic field and gate voltage and then through localisation effects. The analysis of these different quantum effects gave consistent results and a phase-coherence length in the hundred nanometre range was extracted for all nanowires below 10 K. This demonstrates the potential of catalyst-free nanowires as building blocks for future quantum electronics devices directly integrated with silicon circuits.

  7. The Kondo effect and coherent transport in stacking-faults-free wurtzite InAs nanowires

    NASA Astrophysics Data System (ADS)

    Kretinin, Andrey V.; Popovitz-Biro, Ronit; Mahalu, Diana; Oreg, Yuval; Heiblum, Moty; Shtrikman, Hadas

    2011-12-01

    The crystalline perfection of wurtzite InAs nanowires grown by the Vapor-Liquid-Solid Molecular Beam Epitaxy technique in combination with careful fabrication of nanowire-based FET devices allowed us to observe a variety of phenomena associated with mesoscopic coherent transport. When the single nanowire channel is nearly pinched-off the Coulomb blockade conductance oscillations exhibit well-pronounced Kondo effect approaching the conductance unitary limit. At some gate voltages the breaking of odd-even parity of the Kondo effect related to the formation of the triplet ground state is observed. At higher gate voltages when the channel is open we observe the Fabry-Pérot type conductance oscillations. The length of the Fabry-Pérot electron resonator deduced from the period of the oscillations is in agreement with the physical length of the nanowire device.

  8. Sharp exciton emission from single InAs quantum dots in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Panev, Nikolay; Persson, Ann I.; Sköld, Niklas; Samuelson, Lars

    2003-09-01

    We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The photoluminescence measurements showed rich spectra consisting of sharp lines with energies and excitation power dependency behavior very similar to that observed for Stranski-Krastanow-grown InAs/GaAs quantum dots. By reducing the excitation power density we were able to obtain a quantum dot spectrum consisting of only one single sharp line—the exciton line.

  9. Encapsulated gate-all-around InAs nanowire field-effect transistors

    SciTech Connect

    Sasaki, Satoshi Tateno, Kouta; Zhang, Guoqiang; Suominen, Henri; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji

    2013-11-18

    We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

  10. Patterned Fabrication of Zinc Oxide Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Khan, Sahar; Lamson, Thomas; Xu, Huizhong

    Zinc oxide nanowires possess desirable mechanical, thermodynamic, electrical, and optical properties. Although the hydrothermal growth process can be applied in tolerable growth conditions, the dimension and density of nanowires has a complex dependence on substrate pre-treatment, precursor concentrations, and growth conditions. Precise control of the geometry and density of nanowires as well as the location of nanowires would allow for the fabrication of useful nanowaveguide devices. In this work, we used electron beam lithography to pattern hole arrays in a polymer layer on gold-coated glass substrates and synthesized zinc oxide nanowires inside these holes. Arrays of nanowires with diameters ranging from 50 nm to 140 nm and various spacings were obtained. The transmission of light through these zinc oxide nanowire arrays in a silver film was also studied. This research was supported by the Seed Grant Program of St. John's University and the National Science Foundation under Grant No. CBET-0953645.

  11. Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

    NASA Astrophysics Data System (ADS)

    Nilsson, Malin; Namazi, Luna; Lehmann, Sebastian; Leijnse, Martin; Dick, Kimberly A.; Thelander, Claes

    2016-05-01

    We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

  12. Microtubule-based gold nanowires and nanowire arrays.

    PubMed

    Zhou, Jing C; Gao, Yao; Martinez-Molares, Alfredo A; Jing, Xiaoye; Yan, Dong; Lau, Joseph; Hamasaki, Toshikazu; Ozkan, Cengiz S; Ozkan, Mihrimah; Hu, Evelyn; Dunn, Bruce

    2008-09-01

    Biological structures are attractive as templates to form nanoscale architectures for electronics because of their dimensions and the ability to interact with inorganic materials. In this study, we report the fabrication and electrical properties of microtubule (MT)-templated Au nanowires, and methods for assembling Au nanowire arrays based on these templates. The adsorption of MTs on silicon substrates is an effective means for preserving the conformation of the MT and provides a convenient platform for electrical measurements. To improve the metallization of MTs, a photochemical route for gold reduction is adapted, which leads to continuous coverage. The conductivity values measured on micrometer-long nanowires are similar to those reported for other biotemplated gold nanowires. A protocol for fabricating arrays of MT-templated gold nanowires is demonstrated.

  13. Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon

    NASA Astrophysics Data System (ADS)

    Gooth, J.; Schaller, V.; Wirths, S.; Schmid, H.; Borg, M.; Bologna, N.; Karg, S.; Riel, H.

    2017-02-01

    We present the monolithic integration and electrical characterization of InAs nanowires (NWs) with the well-defined geometries and positions on Si as a platform for quantum transport studies. Hereby, one-dimensional (1D) ballistic transport with step-like 1D conductance quantization in units of 2e2/h is demonstrated for NWs with the widths between 28 nm and 58 nm and a height of 40 nm. The electric field control of up to four individual modes is achieved. Furthermore, the sub-band structure of the nanowires is investigated using bias spectroscopy. The splitting between the first and the second sub-band increases as the width of the NWs is reduced, whereas the degeneracy of the second sub-band can be tuned by the symmetry of the NW cross section, in accordance with a "particle in a box" model. The length-dependent studies reveal ballistic transport for up to 300 nm and quasi-ballistic transport with a mean free path of 470 nm for longer InAs NW channels at 30 K. We anticipate that the ballistic 1D transport in monolithically integrated InAs NWs presented here will form the basis for sophisticated quantum wire devices for the future integrated circuits with additional functionalities.

  14. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy.

    PubMed

    Zhuang, Qian D; Anyebe, Ezekiel A; Sanchez, Ana M; Rajpalke, Mohana K; Veal, Tim D; Zhukov, Alexander; Robinson, Benjamin J; Anderson, Frazer; Kolosov, Oleg; Fal'ko, Vladimir

    2014-01-01

    We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter along their entire length. In comparison with conventional InAs NWs grown on Si (111), the graphite surface led to significant effects on the NWs geometry grown on it, i.e. larger diameter, shorter length with lower number density, which were ascribed to the absence of dangling bonds on the graphite surface. The axial growth rate of the NWs has a strong dependence on growth time, which increases quickly in the beginning then slows down after the NWs reach a length of approximately 0.8 μm. This is attributed to the combined axial growth contributions from the surface impingement and sidewall impingement together with the desorption of adatoms during the diffusion. The growth of InAs NWs on graphite was proposed following a vapour-solid mechanism. High-resolution transmission electron microscopy reveals that the NW has a mixture of pure zinc-blende and wurtzite insertions.

  15. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

    PubMed Central

    2014-01-01

    We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter along their entire length. In comparison with conventional InAs NWs grown on Si (111), the graphite surface led to significant effects on the NWs geometry grown on it, i.e. larger diameter, shorter length with lower number density, which were ascribed to the absence of dangling bonds on the graphite surface. The axial growth rate of the NWs has a strong dependence on growth time, which increases quickly in the beginning then slows down after the NWs reach a length of approximately 0.8 μm. This is attributed to the combined axial growth contributions from the surface impingement and sidewall impingement together with the desorption of adatoms during the diffusion. The growth of InAs NWs on graphite was proposed following a vapour-solid mechanism. High-resolution transmission electron microscopy reveals that the NW has a mixture of pure zinc-blende and wurtzite insertions. PMID:25024683

  16. X-ray diffraction strain analysis of a single axial InAs 1-x Px nanowire segment.

    PubMed

    Keplinger, Mario; Mandl, Bernhard; Kriegner, Dominik; Holý, Václav; Samuelsson, Lars; Bauer, Günther; Deppert, Knut; Stangl, Julian

    2015-01-01

    The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires.

  17. Efficient Terahertz Emission from InAs Nanowires

    DTIC Science & Technology

    2011-09-16

    are specific to high aspect ratio geometries. DOI: 10.1103/PhysRevB.84.115421 PACS number(s): 73.21.−b, 81.07.Gf I . MOTIVATION Manipulation of...43 The symmetric nature of the I -V curve in Fig. 4(b) afforded by the two ohmic41,42 contacts despite their geometrically asymmetric nature, is...consistent with SCLC (a bulk-limited regime). This is in marked contrast to rectifying I -V characteristics observed for Au catalyst/Ge nanowire contacts

  18. Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion

    NASA Astrophysics Data System (ADS)

    Huang, Hui; Ren, Xiaomin; Ye, Xian; Guo, Jingwei; Wang, Qi; Zhang, Xia; Cai, Shiwei; Huang, Yongqing

    2010-11-01

    The dependence of crystal structure on contributions of adatom diffusion (ADD) and precursor direct impingement (DIM) was investigated for vapor-liquid-solid growth of InAs nanowires (NWs). The ADD contributions from the sidewalls and substrate surface can be changed by using GaAs NWs of different length as the basis for growing InAs NWs. We found that pure zinc-blende structure is favored when DIM contributions dominate. Moreover, without changing the NW diameter or growth parameters (such as temperature or V/III ratio), a transition from zinc-blende to wurtzite structure can be realized by increasing the ADD contributions. A nucleation model is proposed in which ADD and DIM contributions play different roles in determining the location and phase of the nucleus.

  19. Electrical characterization of chemical and dielectric passivation of InAs nanowires

    NASA Astrophysics Data System (ADS)

    Holloway, Gregory W.; Haapamaki, Chris M.; Kuyanov, Paul; LaPierre, Ray R.; Baugh, Jonathan

    2016-11-01

    The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measuring electrical conductance through nanowire field effect transistors treated with a variety of surface preparations. By extracting field effect mobility, subthreshold swing, threshold shift with temperature, and the gate hysteresis for each device, we infer the relative effects of the different treatments on the factors influencing transport. It is found that a combination of chemical passivation followed by deposition of an aluminum oxide dielectric shell yields the best results compared to the other treatments, and comparable to untreated nanowires. Finally, it is shown that an entrenched, top-gated device using an optimally treated nanowire can successfully form a stable double quantum dot at low temperatures. The device has excellent electrostatic tunability owing to the conformal dielectric layer and the combination of local top gates and a global back gate.

  20. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rolland, Chloé; Caroff, Philippe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud

    2013-06-01

    We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

  1. g-factor anisotropy in nanowire-based InAs quantum dots

    SciTech Connect

    D'Hollosy, Samuel; Fábián, Gábor; Baumgartner, Andreas; Schönenberger, Christian; Nygård, Jesper

    2013-12-04

    The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

  2. Phase diagrams for understanding gold-seeded growth of GaAs and InAs nanowires

    NASA Astrophysics Data System (ADS)

    Ghasemi, Masoomeh; Johansson, Jonas

    2017-04-01

    Phase diagrams are useful tools to study the phase equilibria of nanowire materials systems because the growth of nanowires is accompanied by phase formation and phase transition. We have modeled the phase equilibria of the As–Au–Ga ternary system by means of the CALPHAD method. This method is a well-established semi-empirical technique for thermodynamic modeling in which Gibbs energy functions with free parameters are defined for all phases in a system followed by adjusting these parameters to the experimental data. Using the resulting As–Au–Ga thermodynamic database, four vertical cuts of this ternary system are calculated and all show good agreement with experiments. This ternary system is particularly useful for predicting the state of the Au seed alloys when growing GaAs nanowires and we discuss such predictions. Similar calculations are performed for Au-seeded InAs nanowires. We show that the vapor–liquid–solid (VLS) growth fails for InAs nanowires, while GaAs nanowires can grow from a liquid particle. Our calculations are in agreement with experimental data on the growth of Au-seeded GaAs and InAs nanowires.

  3. Quantum dots in InAs nanowires induced by surface potential fluctuations.

    PubMed

    Weis, Karl; Wirths, Stephan; Winden, Andreas; Sladek, Kamil; Hardtdegen, Hilde; Lüth, Hans; Grützmacher, Detlev; Schäpers, Thomas

    2014-04-04

    Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic quantum dots, i.e. dots not intentionally defined by electrodes. Such dots have been studied before, but the suggested explanations for their origin leave some open questions, which are addressed here. Stability diagrams of samples with different doping levels are recorded at electron temperatures below 200 mK, allowing us to estimate the number and size of the dots as well as the type of connection, i.e. in series or in parallel. We discuss several potential physical origins of the dots and conclude that they are most probably induced by potential fluctuations at the nanowire surface. Additionally, we show that via gate voltage and doping, the samples can be tuned to different regimes of Coulomb blockade.

  4. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.

    PubMed

    Joyce, Hannah J; Docherty, Callum J; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

    2013-05-31

    We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm² V⁻¹ s⁻¹, which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s⁻¹. This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10⁵  cm s⁻¹. These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.

  5. Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

    NASA Astrophysics Data System (ADS)

    Wang, Jiyin; Huang, Shaoyun; Lei, Zijin; Pan, Dong; Zhao, Jianhua; Xu, H. Q.

    2016-08-01

    We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ˜ 2.3 meV, a strong spin-orbit interaction of ΔSO ˜ 140 μeV, and a large and strongly level-dependent Landé g factor of ˜12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.

  6. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

    PubMed

    Thelander, C; Dick, K A; Borgström, M T; Fröberg, L E; Caroff, P; Nilsson, H A; Samuelson, L

    2010-05-21

    The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity.

  7. Periodic nanowire array at the crystal interface.

    PubMed

    Nakamura, Atsutomo; Mizoguchi, Teruyasu; Matsunaga, Katsuyuki; Yamamoto, Takahisa; Shibata, Naoya; Ikuhara, Yuichi

    2013-07-23

    A dislocation in a crystalline material has dangling bonds at its core and a strong strain field in its vicinity. Consequently, the dislocation attracts solute atoms and forms a so-called Cottrell atmosphere along the dislocation. A crystalline dislocation can be used as a template to produce nanowires by selectively doping foreign atoms along the dislocation. However, control of the configuration, spacing, and density of the formed periodic nanowire array has heretofore been extremely difficult. Here we show a method for fabricating ordered, electrically conductive nanowire arrays using periodic dislocations at crystal interfaces. As a demonstration, we fabricated arrays of titanium nanowires arranged at intervals of either 13 or 90 nm and then confirmed by scanning probe microscopy that they exhibit electrical conductivity inside an insulating aluminum oxide. Significantly, we were able to precisely control nanowire periodicity by the choice of crystal orientation and/or crystal planes at the crystal interface. This simple method for the fabrication of periodic nanowire arrays of highly controlled density should be widely applicable to electrical, magnetic, and optical devices.

  8. Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions.

    PubMed

    Chen, I-Ju; Lehmann, Sebastian; Nilsson, Malin; Kivisaari, Pyry; Linke, Heiner; Dick, Kimberly A; Thelander, Claes

    2017-02-08

    Although zinc-blende (ZB) and wurtzite (WZ) structures differ only in the atomic stacking sequence, mixing of crystal phases can strongly affect the electronic properties, a problem particularly common to bottom up-grown nanostructures. A lack of understanding of the nature of electronic transport at crystal phase junctions thus severely limits our ability to develop functional nanowire devices. In this work we investigated electron transport in InAs nanowires with designed mixing of crystal structures, ZB/WZ/ZB, by temperature-dependent electrical measurements. The WZ inclusion gives rise to an energy barrier in the conduction band. Interpreting the experimental result in terms of thermionic emission and using a drift-diffusion model, we extracted values for the WZ/ZB band offset, 135 ± 10 meV, and interface sheet polarization charge density on the order of 10(-3) C/m(2). The extracted polarization charge density is 1-2 orders of magnitude smaller than previous experimental results, but in good agreement with first principle calculation of spontaneous polarization in WZ InAs. When the WZ length is reduced below 20 nm, an effective barrier lowering is observed, indicating the increasing importance of tunneling transport. Finally, we found that band-bending at ZB/WZ junctions can lead to bound electron states within an enclosed WZ segment of sufficient length, evidenced by our observation of Coulomb blockade at low temperature. These findings provide critical input for modeling and designing the electronic properties of novel functional devices, such as nanowire transistors, where crystal polytypes are commonly found.

  9. Photoresponse in arrays of thermoelectric nanowire junctions

    NASA Astrophysics Data System (ADS)

    Huber, T. E.; Scott, R.; Johnson, S.; Brower, T.; Belk, J. H.; Hunt, J. H.

    2013-07-01

    We report the first demonstration of optical detection by thermoelectric nanowire junctions. We employed devices composed of bismuth nanowire arrays which are capped with a transparent indium tin oxide electrode. The incident surface features very low optical reflectivity and enhanced light trapping. The unique attributes of the thermoelectric arrays are the combination of strong temporal and optical wavelength dependences of the photocurrent. Under infrared illumination, the signal can be completely described by thermoelectric effects considering cooling rates given by heat diffusion through the array. In addition, under visible illumination, we observe a photovoltaic response.

  10. Plasmon resonant cavities in vertical nanowire arrays

    SciTech Connect

    Bora, M; Bond, T; Behymer, E; Chang, A

    2010-02-23

    We investigate tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides. Resonances are observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors over 103 are possible due to plasmon focusing in the inter-wire space.

  11. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    PubMed

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  12. The effective excitonic g factors of Mn-doped InAs nanowires

    NASA Astrophysics Data System (ADS)

    Xiong, Wen

    2017-04-01

    Based on the derived eight-band k · p Hamiltonian, the electronic structures of Mn-doped InAs nanowires in the magnetic field are calculated. We find the lowest optical transition will be split to four individual transitions when the magnetic field is applied along z axis, and two of them are σ polarized light. Furthermore, the Zeeman splitting energy at the Γ point of two σ polarized light will increase nonlinearly as the increase of the magnetic field. Additionally, an effective excitonic g factor at the Γ point is defined, and the effective excitonic g factors will decrease greatly with the increase of the radius of nanowires and the decrease of the concentration of manganese ions, while the effective excitonic g factors decrease slightly when the magnetic field increases. Interestingly, the effective excitonic g factors can experience a substantial decrease when the temperature increases from 10 K to 100 K and is almost not affected when the temperature varies from 100 K to 300 K. Therefore, we can infer that large effective excitonic g factors can be obtained when small radius of nanowires, high concentration of manganese ions and low temperature are satisfied.

  13. InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Robson, M. T.; LaPierre, R. R.

    2016-02-01

    InAs nanowires (NWs) were grown on silicon substrates by gas source molecular beam epitaxy using five different growth modes: (1) Au-assisted growth, (2) positioned (patterned) Au-assisted growth, (3) Au-free growth, (4) positioned Au-assisted growth using a patterned oxide mask, and (5) Au-free selective-area epitaxy (SAE) using a patterned oxide mask. Optimal growth conditions (temperature, V/III flux ratio) were identified for each growth mode for control of NW morphology and vertical NW yield. The highest yield (72%) was achieved with the SAE method at a growth temperature of 440 °C and a V/III flux ratio of 4. Growth mechanisms are discussed for each of the growth modes.

  14. Time evolution studies of laser induced chemical changes in InAs nanowire using Raman spectroscopy

    SciTech Connect

    Pal, Suparna; Aggarwal, R.; Kumari Gupta, Vandna; Ingale, Alka

    2014-07-07

    We report the study of time evolution of chemical changes on the surface of an InAs nanowire (NW) on laser irradiation in different power density regime, using Raman spectroscopy for a time span of 8–16 min. Mixture of metastable oxides like InAsO{sub 4,} As{sub 2}O{sub 3} are formed upon oxidation, which are reflected as sharp Raman peaks at ∼240–254 and 180–200 cm{sup −1}. Evidence of removal of arsenic layer by layer is also observed at higher power density. Position controlled laser induced chemical modification on a nanometer scale, without changing the core of the NW, can be useful for NW based device fabrication.

  15. Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions.

    PubMed

    Tiira, J; Strambini, E; Amado, M; Roddaro, S; San-Jose, P; Aguado, R; Bergeret, F S; Ercolani, D; Sorba, L; Giazotto, F

    2017-04-12

    The Josephson effect is a fundamental quantum phenomenon where a dissipationless supercurrent is introduced in a weak link between two superconducting electrodes by Andreev reflections. The physical details and topology of the junction drastically modify the properties of the supercurrent and a strong enhancement of the critical supercurrent is expected to occur when the topology of the junction allows an emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be described by any known conventional phenomenon of Josephson junctions. We consider these results in the context of topological superconductivity, and show that the observed critical supercurrent enhancement is compatible with a magnetic field-induced topological transition.

  16. Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.

    PubMed

    Karg, S F; Troncale, V; Drechsler, U; Mensch, P; Das Kanungo, P; Schmid, H; Schmidt, V; Gignac, L; Riel, H; Gotsmann, B

    2014-08-01

    Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).

  17. Nanowire sensor, sensor array, and method for making the same

    NASA Technical Reports Server (NTRS)

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  18. Electroluminescent, polycrystalline cadmium selenide nanowire arrays.

    PubMed

    Ayvazian, Talin; van der Veer, Wytze E; Xing, Wendong; Yan, Wenbo; Penner, Reginald M

    2013-10-22

    Electroluminescence (EL) from nanocrystalline CdSe (nc-CdSe) nanowire arrays is reported. The n-type, nc-CdSe nanowires, 400-450 nm in width and 60 nm in thickness, were synthesized using lithographically patterned nanowire electrodeposition, and metal-semiconductor-metal (M-S-M) devices were prepared by the evaporation of two gold contacts spaced by either 0.6 or 5 μm. These M-S-M devices showed symmetrical current voltage curves characterized by currents that increased exponentially with applied voltage bias. As the applied biased was increased, an increasing number of nanowires within the array "turned on", culminating in EL emission from 30 to 50% of these nanowires at applied voltages of 25-30 V. The spectrum of the emitted light was broad and centered at 770 nm, close to the 1.74 eV (712 nm) band gap of CdSe. EL light emission occurred with an external quantum efficiency of 4 × 10(-6) for devices with a 0.60 μm gap between the gold contacts and 0.5 × 10(-6) for a 5 μm gap-values similar to those reported for M-S-M devices constructed from single-crystalline CdSe nanowires. Kelvin probe force microscopy of 5 μm nc-CdSe nanowire arrays showed pronounced electric fields at the gold electrical contacts, coinciding with the location of strongest EL light emission in these devices. This electric field is implicated in the Poole-Frenkel minority carrier emission and recombination mechanism proposed to account for EL light emission in most of the devices that were investigated.

  19. Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111)

    PubMed Central

    Park, Dong Woo; Jeon, Seong Gi; Lee, Cheul-Ro; Lee, Sang Jun; Song, Jae Yong; Kim, Jun Oh; Noh, Sam Kyu; Leem, Jae-Young; Kim, Jin Soo

    2015-01-01

    We report structural and electrical properties of catalyst-free Si-doped InAs nanowires (NWs) formed on Si(111) substrates. The average diameter of Si-doped InAs NWs was almost similar to that of undoped NWs with a slight increase in height. In the previous works, the shape and size of InAs NWs formed on metallic catalysts or patterned structures were significantly changed by introducing dopants. Even though the external shape and size of the Si-doped NWs in this work were not changed, crystal structures inside the NWs were significantly changed. For the undoped InAs NWs, both zincblende (ZB) and wurzite (WZ) structures were observed in transmission-electron microscope images, where the portion of WZ structure was estimated to be more than 30%. However, only ZB was observed with an increase in stacking fault (SF) for the Si-doped NWs. The undoped and Si-doped InAs NWs were used as channels of four-point electrical measurements with Al/Ni electrodes to investigate electrical properties. The resistivity calculated from the current-voltage curve of a Si-doped InAs NW showed 1.32 × 10−3 Ωcm, which was dramatically decreased from 10.14 × 10−3 Ωcm for the undoped InAs NW. A relatively low resistivity of catalyst-free Si-doped InAs NWs was achieved without significant change in structural dimensions. PMID:26581781

  20. Copper nanowire arrays for transparent electrodes

    NASA Astrophysics Data System (ADS)

    Gao, Tongchuan; Leu, Paul W.

    2013-08-01

    Metallic nanowires have demonstrated high optical transmission and electrical conductivity with potential for application as transparent electrodes that may be used in flexible devices. In this paper, we systematically investigated the electrical and optical properties of 1D and 2D copper nanowire (Cu NW) arrays as a function of diameter and pitch and compared their performance to that of Cu thin films and our recent results on silver (Ag) NW arrays. Cu NWs exhibit enhanced transmission over thin films due to propagating resonance modes between NWs. For the same geometry, the transmission of Cu NW arrays is about the same as that of Ag NW arrays since the dispersion relation of propagating modes in metal nanowire arrays are independent of the metal permittivity. The sheet resistance is also comparable since the conductivity of Cu is about the same as that of Ag. Just as in Ag NWs, larger Cu NW diameters and pitches are favored for achieving higher solar transmission at a particular sheet resistance. Cu NW arrays may achieve solar transmission >90% with sheet resistances <10 Ω/sq and figure of merit σDC/σop>1000. One of the primary concerns with the use of Cu is oxidation and we also investigated the impact of a nickel (Ni) coating, which can serve as an anti-oxidation layer, on the electrical and optical properties.

  1. InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

    NASA Astrophysics Data System (ADS)

    Taupin, M.; Mannila, E.; Krogstrup, P.; Maisi, V. F.; Nguyen, H.; Albrecht, S. M.; Nygârd, J.; Marcus, C. M.; Pekola, J. P.

    2016-11-01

    We report on the fabrication of single-electron transistors using InAs nanowires with epitaxial aluminum with fixed tunnel barriers made of aluminum oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminum cover shell, and they behave as metallic single-electron transistors. In contrast to the typical few-channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and, thus, provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

  2. Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111).

    PubMed

    Biermanns, Andreas; Dimakis, Emmanouil; Davydok, Anton; Sasaki, Takuo; Geelhaar, Lutz; Takahasi, Masamitu; Pietsch, Ullrich

    2014-12-10

    InAs nanowires that grow catalyst-free along the [111] crystallographic orientation are prone to wurtzite-zincblende polytypism, making the control of the crystal phase highly challenging. In this work, we explore the dynamic relation between the growth conditions and the structural composition of the nanowires using time-resolved X-ray scattering and diffraction measurements during the growth by molecular beam epitaxy. A spontaneous buildup of liquid indium is directly observed in the beginning of the growth process and associated with the simultaneous nucleation of InAs nanowires predominantly in the wurtzite phase. The highly arsenic-rich growth conditions that we used limited the existence of the liquid indium to a short time interval, which is defined as the nucleation phase. After their nucleation, the nanowires grow in the absence of liquid indium, and with a highly defective wurtzite structure. Complementary ex-situ diffuse X-ray scattering measurements and modeling revealed that this structural degradation is due to the formation of densely spaced stacking faults. Thus, high wurtzite phase purity is associated with the presence of liquid indium. This finding implies that pure wurtzite nanowires may be obtained only if the growth is performed under the continuous presence of liquid indium at the growth interface, that is, in the vapor-liquid-solid mode.

  3. Plasmon resonant cavities in vertical nanowire arrays

    DOEpatents

    Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.

    2014-07-15

    Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.

  4. Magnetic properties of arrays of electrodeposited nanowires

    NASA Astrophysics Data System (ADS)

    Ross, C. A.; Hwang, M.; Shima, M.; Smith, Henry I.; Farhoud, M.; Savas, T. A.; Schwarzacher, W.; Parrochon, J.; Escoffier, W.; Bertram, H. Neal; Humphrey, F. B.; Redjdal, M.

    2002-08-01

    The fabrication and magnetic properties of arrays of short nanowires are reviewed. The arrays consist of electrodeposited ferromagnetic cylinders with aspect ratios of up to 3 and diameters of 57-180 nm. Their hysteresis loops are characterized and their remanent states are related to the predictions of a three-dimensional micromagnetic model, which shows a transition from a single-domain 'flower' state to a lower-remanence 'vortex' state with increasing diameter. The shapes of the array hysteresis loops are governed by interactions between the particles. The switching fields of small Ni cylinders can be described using a dynamic micromagnetic model.

  5. Thermoelectric Nanowire Arrays Response to Illumination

    NASA Astrophysics Data System (ADS)

    Huber, Tito; Scott, Reum; Johnson, Scott; Brower, Tina; Nikolaeva, Albina; Konopko, Leonid

    Bismuth nanowire arrays configured on devices where they are capped with a transparent indium tin oxide electrode generate electric power when exposed to light. The arrays feature poor optical reflectivity and, possibly, light trapping. We show experimental results that indicate that the arrays respond to illumination owing to the thermoelectric conversion of heat absorbed at the surface. The unique features of the energy pathway are manifested through a strong temporal and photon wavelength dependence of the photoresponse. Energy conversion in thermoelectrics with light trapping surfaces is a path to fast infrared light detection and across-the-spectrum solar energy harvesting.

  6. Nanowire sensors and arrays for chemical/biomolecule detection

    NASA Technical Reports Server (NTRS)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  7. Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.

    PubMed

    Nylund, Gustav; Storm, Kristian; Lehmann, Sebastian; Capasso, Federico; Samuelson, Lars

    2016-02-10

    III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.

  8. Chemical beam epitaxy growth of III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Mohummed Noori, Farah T.

    2013-12-01

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425-454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5-1 μm and of an array 40nm diameter with length is in the range 0.3-0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  9. Chemical beam epitaxy growth of III–V semiconductor nanowires

    SciTech Connect

    Mohummed Noori, Farah T.

    2013-12-16

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425–454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5–1 μm and of an array 40nm diameter with length is in the range 0.3–0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  10. Tunable double quantum dots in InAs nanowires defined by local gate electrodes.

    NASA Astrophysics Data System (ADS)

    Fasth, Carina; Fuhrer, Andreas; Samuelson, Lars

    2006-03-01

    We present low-temperature transport measurements on quantum dots induced in homogeneous InAs quantum wires 50 nm in diameter. Quantum dots are induced by electrical depletion of the wire using local gate electrodes with down to 30 nm electrode spacing. This scheme has permitted the realization of fully gate-defined multiple quantum dots along the nanowire [1]. Tunability in double quantum dots is a prerequisite for the system to be operated as a quantum gate. We demonstrate control over the lead tunnel barrier transparencies and, in the case of double quantum dots, the interdot coupling. Using the local gate electrodes also as plunger gates we measure double dot honeycomb stability diagrams which show the transition from a single large dot to two weakly coupled dots at 4.2K. The induced quantum dots can be tuned into the few-electron regime which is shown from Coulomb blockade measurements. We extract values of orbital energy-level spacings, capacitances and capacitive and tunnel interdot coupling for this system. [1] C. Fasth et al., NanoLett 5, 1487 (2005).

  11. Structural characterization of GaAs and InAs nanowires by means of Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Begum, N.; Piccin, M.; Jabeen, F.; Bais, G.; Rubini, S.; Martelli, F.; Bhatti, A. S.

    2008-11-01

    We report Raman studies of GaAs and InAs nanowires (NWs) grown on SiO2 and GaAs surfaces by means of catalyst-assisted molecular beam epitaxy. We have investigated several tens of NWs grown using either Mn or Au as a catalyst. The LO and TO phonon lines of the NWs showed an energy downshift and a broadening as compared to the lines usually observed in the corresponding bulk materials. A doublet is sometimes observed in the LO region due to the observation of a signal attributed to the surface optical (SO) phonon. The energy position of the SO phonon agrees with the values expected considering the section diameter of the NWs. LO and TO downshifts are due to the presence of structural defects within the NWs. The larger the energy downshift, the smaller the dimension of the defect-free regions. The results demonstrate that different catalysts provide wires with comparable crystal quality. The measurements also point out that differences in defect density can be found in wires coming from the same batch indicating that a substantial effort will be needed to obtain high homogeneities of the NW quality.

  12. Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

    PubMed

    Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Schaller, Vanessa; Wirths, Stephan; Moselund, Kirsten; Luisier, Mathieu; Karg, Siegfried; Riel, Heike

    2017-04-12

    Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

  13. Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires.

    PubMed

    Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H Q

    2016-04-06

    We report on a theoretical study of the electronic structures of the [1 1 1]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp(3)s*, spin-orbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C(3v) double point group. It is shown that all bands of these nanowires are doubly degenerate at the Γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the Γ-point as a manifestation of spin-splitting due to spin-orbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [1 1 1]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.

  14. Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires.

    PubMed

    Chen, Xiren; Zhuang, Qiandong; Alradhi, H; Jin, Zh M; Zhu, Liangqing; Chen, Xin; Shao, Jun

    2017-03-08

    Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

  15. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.

    PubMed

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2015-08-07

    In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two V/III ratio procedure consists of a first high V/III ratio growth step to prepare the nanowire foundation on the substrate surface, followed by a low V/III ratio step to induce the nanowire growth. By manipulating the V/III ratios in different steps, we have achieved the controlled growth of pure defect-free zinc-blende structured InAs nanowires on the GaAs {1̄1̄1̄} substrates. This study provides an approach to control not only the crystal structure of semiconductor nanowires, but also their structural qualities.

  16. Synthesis and characterization of single crystalline selenium nanowire arrays

    SciTech Connect

    Zhang, X.Y. . E-mail: apzhxy@polyu.edu.hk; Xu, L.H.; Dai, J.Y.; Cai, Y.; Wang, N.

    2006-09-14

    Ordered selenium nanowire arrays with diameters about 40 nm have been fabricated by electrodeposition using anodic porous alumina templates. As determined by X-ray diffraction, Raman spectra, electron diffraction and high-resolution transmission electron microscopy, selenium nanowires have uniform diameters, which are fully controllable. Single crystalline trigonal selenium nanowires have been obtained after postannealing at 180 deg. C. These nanowires are perfect with a c-axis growth orientation. The optical absorption spectra reveal two types of electron transition activity.

  17. InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.

    PubMed

    Berg, Martin; Persson, Karl-Magnus; Wu, Jun; Lind, Erik; Sjöland, Henrik; Wernersson, Lars-Erik

    2014-12-05

    Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a -3 dB cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.

  18. Development of nanowire arrays for neural probe

    NASA Astrophysics Data System (ADS)

    Abraham, Jose K.; Xie, Jining; Varadan, Vijay K.

    2005-05-01

    It is already established that functional electrical stimulation is an effective way to restore many functions of the brain in disabled individuals. The electrical stimulation can be done by using an array of electrodes. Neural probes stimulate or sense the biopotentials mainly through the exposed metal sites. These sites should be smaller relative to the spatial potential distribution so that any potential averaging in the sensing area can be avoided. At the same time, the decrease in size of these sensing sites is limited due to the increase in impedance levels and the thermal noise while decreasing its size. It is known that current density in a planar electrode is not uniform and a higher current density can be observer around the perimeter of the electrodes. Electrical measurements conducted on many nanotubes and nanowires have already proved that it could be possible to use for current density applications and the drawbacks of the present design in neural probes can be overcome by incorporating many nanotechnology solutions. In this paper we present the design and development of nanowire arrays for the neural probe for the multisite contact which has the ability to collect and analyze isolated single unit activity. An array of vertically grown nanowires is used as contact site and many of such arrays can be used for stimulating as well as recording sites. The nanolevel interaction and wireless communication solution can extend to applications involving the treatment of many neurological disorders including Parkinson"s disease, Alzheimer"s disease, spinal injuries and the treatment of blindness and paralyzed patients with minimal or no invasive surgical procedures.

  19. Thermal conductivity in porous silicon nanowire arrays.

    PubMed

    Weisse, Jeffrey M; Marconnet, Amy M; Kim, Dong Rip; Rao, Pratap M; Panzer, Matthew A; Goodson, Kenneth E; Zheng, Xiaolin

    2012-10-06

    The nanoscale features in silicon nanowires (SiNWs) can suppress phonon propagation and strongly reduce their thermal conductivities compared to the bulk value. This work measures the thermal conductivity along the axial direction of SiNW arrays with varying nanowire diameters, doping concentrations, surface roughness, and internal porosities using nanosecond transient thermoreflectance. For SiNWs with diameters larger than the phonon mean free path, porosity substantially reduces the thermal conductivity, yielding thermal conductivities as low as 1 W/m/K in highly porous SiNWs. However, when the SiNW diameter is below the phonon mean free path, both the internal porosity and the diameter significantly contribute to phonon scattering and lead to reduced thermal conductivity of the SiNWs.

  20. Thermal conductivity in porous silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Weisse, Jeffrey M.; Marconnet, Amy M.; Kim, Dong Rip; Rao, Pratap M.; Panzer, Matthew A.; Goodson, Kenneth E.; Zheng, Xiaolin

    2012-10-01

    The nanoscale features in silicon nanowires (SiNWs) can suppress phonon propagation and strongly reduce their thermal conductivities compared to the bulk value. This work measures the thermal conductivity along the axial direction of SiNW arrays with varying nanowire diameters, doping concentrations, surface roughness, and internal porosities using nanosecond transient thermoreflectance. For SiNWs with diameters larger than the phonon mean free path, porosity substantially reduces the thermal conductivity, yielding thermal conductivities as low as 1 W/m/K in highly porous SiNWs. However, when the SiNW diameter is below the phonon mean free path, both the internal porosity and the diameter significantly contribute to phonon scattering and lead to reduced thermal conductivity of the SiNWs.

  1. Angle sensing with ferromagnetic nanowire arrays

    NASA Astrophysics Data System (ADS)

    Tannous, C.; Gieraltowski, J.

    2014-01-01

    Hysteresis loops and Ferromagnetic Resonance (FMR) linewidths of Nickel ferromagnetic nanowire arrays are measured versus angle θH between the applied magnetic field angle and the common nanowire axis. Using Preisach analysis, we extract from the hysteresis loop an interaction parameter σi that strongly depends on θH. Extending the analysis to FMR lineshapes, we deduce a strong dependence of the FMR field linewidth ΔH on θH through the interaction parameter σi. Existence of a link between static (hysteresis) and dynamic (FMR) cases through θH might be exploited in contactless absolute angle sensing devices that could compete with inductive, Hall, and magnetoresistive devices.

  2. Fabrication of patterned polymer nanowire arrays.

    PubMed

    Fang, Hao; Yuan, Dajun; Guo, Rui; Zhang, Su; Han, Ray P S; Das, Suman; Wang, Zhong Lin

    2011-02-22

    A method for the large-scale fabrication of patterned organic nanowire (NW) arrays is demonstrated by the use of laser interference patterning (LIP) in conjunction with inductively coupled plasma (ICP) etching. The NW arrays can be fabricated after a short ICP etching of periodic patterns produced through LIP. Arrays of NWs have been fabricated in UV-absorbent polymers, such as PET (polyethylene terephthalate) and Dura film (76% polyethylene and 24% polycarbonate), through laser interference photon ablation and in UV transparent polymers such as PVA (polyvinyl acetate) and PP (polypropylene) through laser interference lithography of a thin layer of photoresist coated atop the polymer surface. The dependence of the structure and morphology of NWs as a function of initial pattern created by LIP and the laser energy dose in LIP is discussed. The absence of residual photoresist atop the NWs in UV-transparent polymers is confirmed through Raman spectroscopy.

  3. Amplified Thermionic Cooling Using Arrays of Nanowires

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok; Choi, Daniel; Shcheglov, Kirill; Hishinuma, Yoshikazu

    2007-01-01

    A class of proposed thermionic cooling devices would incorporate precise arrays of metal nanowires as electron emitters. The proposed devices could be highly miniaturized, enabling removal of heat from locations, very close to electronic devices, that have previously been inaccessible for heat-removal purposes. The resulting enhancement of removal of heat would enable operation of the devices at higher power levels and higher clock speeds. Moreover, the mass, complexity, and bulk of electronic circuitry incorporating these highly miniaturized cooling devices could be considerably reduced, relative to otherwise equivalent circuitry cooled by conventional electromechanical, thermoelectric, and fluidic means. In thermionic cooling, one exploits the fact that because only the highest-energy electrons are thermionically emitted, collecting those electrons to prevent their return to the emitting electrode results in the net removal of heat from that electrode. Collection is effected by applying an appropriate positive bias potential to another electrode placed near the emitting electrode. The concept underlying the proposal is that the thermionic-emission current and, hence, the cooling effect attainable by use of an array of nanowires could be significantly greater than that attainable by use of a single emitting electrode or other electron- emitting surface. The wires in an array according to the proposal would protrude perpendicularly from a planar surface and their heights would be made uniform to within a sub-nanometer level of precision

  4. III-V Nanowire Array Growth by Selective Area Epitaxy

    SciTech Connect

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Tingwei; Dapkus, P. Daniel

    2011-12-23

    III-V semiconductor nanowires are unique material phase due to their high aspect ratio, large surface area, and strong quantum confinement. This affords the opportunity to control charge transport and optical properties for electrical and photonic applications. Nanoscale selective area metalorganic chemical vapor deposition growth (NS-SAG) is a promising technique to maximize control of nanowire diameter and position, which are essential for device application. In this work, InP and GaAs nanowire arrays are grown by NS-SAG. We observe enhanced sidewall growth and array uniformity disorder in high growth rate condition. Disorder in surface morphology and array uniformity of InP nanowire array is explained by enhanced growth on the sidewall and stacking faults. We also find that AsH{sub 3} decomposition on the sidewall affects the growth behavior of GaAs nanowire arrays.

  5. Arrays of indefinitely long uniform nanowires and nanotubes

    NASA Astrophysics Data System (ADS)

    Yaman, Mecit; Khudiyev, Tural; Ozgur, Erol; Kanik, Mehmet; Aktas, Ozan; Ozgur, Ekin O.; Deniz, Hakan; Korkut, Enes; Bayindir, Mehmet

    2011-07-01

    Nanowires are arguably the most studied nanomaterial model to make functional devices and arrays. Although there is remarkable maturity in the chemical synthesis of complex nanowire structures, their integration and interfacing to macro systems with high yields and repeatability still require elaborate aligning, positioning and interfacing and post-synthesis techniques. Top-down fabrication methods for nanowire production, such as lithography and electrospinning, have not enjoyed comparable growth. Here we report a new thermal size-reduction process to produce well-ordered, globally oriented, indefinitely long nanowire and nanotube arrays with different materials. The new technique involves iterative co-drawing of hermetically sealed multimaterials in compatible polymer matrices similar to fibre drawing. Globally oriented, endlessly parallel, axially and radially uniform semiconducting and piezoelectric nanowire and nanotube arrays hundreds of metres long, with nanowire diameters less than 15 nm, are obtained. The resulting nanostructures are sealed inside a flexible substrate, facilitating the handling of and electrical contacting to the nanowires. Inexpensive, high-throughput, multimaterial nanowire arrays pave the way for applications including nanowire-based large-area flexible sensor platforms, phase-changememory, nanostructure-enhanced photovoltaics, semiconductor nanophotonics, dielectric metamaterials,linear and nonlinear photonics and nanowire-enabled high-performance composites.

  6. Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

    NASA Astrophysics Data System (ADS)

    Fahed, M.; Desplanque, L.; Troadec, D.; Patriarche, G.; Wallart, X.

    2016-12-01

    The growth of in-plane GaSb nanotemplates on a GaAs (001) substrate is demonstrated combining nanoscale patterning of the substrate and selective area heteroepitaxy. The selective growth of GaSb inside nano-stripe openings in a SiO2 mask layer is achieved at low temperature thanks to the use of an atomic hydrogen flux during the molecular beam epitaxy. These growth conditions promote the spreading of GaSb inside the apertures and lattice mismatch accommodation via the formation of a regular array of misfit dislocations at the interface between GaSb and GaAs. We highlight the impact of the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the strain relaxation of GaSb along the [110] direction and on the nanowire length along the [1-10] one. Finally we demonstrate how these GaSb nanotemplates can be used as pedestals for subsequent growth of in-plane InAs nanowires.

  7. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.

    PubMed

    Fang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei

    2016-10-12

    One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼10(12) Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼10(10) Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.

  8. Electrodeposition and device incorporation of bismuth antimony nanowire arrays

    NASA Astrophysics Data System (ADS)

    Keyani, Jennifer

    Thermoelectric materials have the unique property where the application of a potential difference across the material results in the formation of a temperature gradient, and vice versa. There is continued interest in bulk thermoelectric materials for power generation and refrigeration applications, however these materials are not currently in widespread use due to their low conversion efficiency. It has been predicted that nanostructured thermoelectric materials will show enhanced performance over their bulk counterparts. In this study, bismuth antimony (Bi1-xSbx) nanowire arrays have been synthesized and assembled into devices in order to demonstrate an enhanced performance in nanostructured thermoelectric materials. Bi1-xSbx nanowire arrays were fabricated by potentiostatic electrodeposition into porous alumina templates from a dimethyl sulfoxide (DMSO) solution. The nanowire composition and texture were studied as a function of the electrodeposition conditions in order to maximize their thermoelectric performance. Energy dispersive spectrometry and electron microprobe analysis were used to study the nanowire composition as a function of the electroactive and non-electroactive species in solution. Texturing in the nanowire arrays was observed by X-ray diffraction and controlled by the applied voltage and presence of supporting electrolyte. The nanowire arrays were also optimized for device incorporation by maximizing the number of nanowires and minimizing their length distribution. The areal density of nanowire arrays was on the order of 1010 wires/cm2 due to the high density of pores in the alumina and the high degree to which those pores were filled with electrodeposited material. A narrow distribution of nanowire lengths was observed by scanning electron microscopy across millimeter-length portions of the arrays. A hybrid nanowire-bulk thermoelectric device was assembled after electrical contacts were electrodeposited over Bi1-xSbx nanowire arrays. Nickel was

  9. Sensing properties of assembled Bi2S3 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Kunakova, G.; Meija, R.; Bite, I.; Prikulis, J.; Kosmaca, J.; Varghese, J.; Holmes, J. D.; Erts, Donats

    2015-09-01

    Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current-voltage characteristics were measured at different relative humidity (RH) levels (5-80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other types of nanowire RH sensor devices.

  10. Modifying the emission of light from a semiconductor nanowire array

    NASA Astrophysics Data System (ADS)

    Anttu, Nicklas

    2016-07-01

    Semiconductor nanowire arrays have been identified as a promising platform for future light emitting diodes (LEDs), for example, due to the materials science freedom of combining lattice-mismatched materials in them. Furthermore, the emission of light from nanowires can be tailored by designing their geometry. Such tailoring could optimize the emission of light to the top side as well as enhance the emission rate through the Purcell effect. However, the possibility for enhanced light extraction from III-V nanowire arrays over a conventional bulk-like LED has not been investigated systematically. Here, we use electromagnetic modeling to study the emission of light from nanowire arrays. We vary both the diameter of the nanowires and the array period to show the benefit of moving from a bulk-like LED to a nanowire array LED. We study the fraction of light emitted to the top air side and to the substrate at wavelength λ. We find several diameter-dependent resonant peaks for which the emission to the top side is maximized. For the strongest such peak, by increasing the array period, the fraction of emitted light that is extracted at the top air side can be enhanced by a factor of 30 compared to that in a planar bulk LED. By modeling a single nanowire, we confirm that it is beneficial to place the nanowires further apart to enhance the emission to the top side. Furthermore, we predict that for a nanowire diameter D > λ/2, a majority of the emitted power ends up in the substrate. Our results offer direction for the design and optimization of nanowire-array based light emitting diodes.

  11. Atomic Layer Deposition Enabled Interconnect Technology for Vertical Nanowire Arrays

    DTIC Science & Technology

    2009-06-01

    nanowire light emitting diodes ( LEDs ), nanowire-based field effect transistors (FETs), resonators, batteries or biomedical applications. Keywords...vertical nanowire arrays are the best configuration for solid state super-capacitors [11,12], lithium ion batteries [13] and NW- LEDs [14],. These...electrodes are formed on top and bottom of NWs. For vertical NW-based LEDs , FETs or batteries, device performance could be significantly enhanced

  12. Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

    PubMed

    Rieger, Torsten; Luysberg, Martina; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

    2012-11-14

    We present results about the growth of GaAs/InAs core-shell nanowires (NWs) using molecular beam epitaxy. The core is grown via the Ga droplet-assisted growth mechanism. For a homogeneous growth of the InAs shell, the As(4) flux and substrate temperature are critical. The shell growth starts with InAs islands along the NW core, which increase in time and merge giving finally a continuous and smooth layer. At the top of the NWs, a small part of the core is free of InAs indicating a crystal phase selective growth. This allows a precise measurement of the shell thickness and the fabrication of InAs nanotubes by selective etching. The strain relaxation in the shell occurs mainly via the formation of misfit dislocations and saturates at ~80%. Additionally, other types of defects are observed, namely stacking faults transferred from the core or formed in the shell, and threading dislocations.

  13. Energy harvesting from vertically aligned PZT nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Zhou, Zhi; Sodano, Henry A.

    2016-04-01

    In this paper, a nanostructured piezoelectric beam is fabricated using vertically aligned lead zirconate titanate (PZT) nanowire arrays and its capability of continuous power generation is demonstrated through direct vibration tests. The lead zirconate titanate nanowires are grown on a PZT thin film coated titanium foil using a hydrothermal reaction. The PZT thin film serves as a nucleation site while the titanium foil is used as the bottom electrode. Electromechanical frequency response function (FRF) analysis is performed to evaluate the power harvesting efficiency of the fabricated device. Furthermore, the feasibility of the continuous power generation using the nanostructured beam is demonstrated through measuring output voltage from PZT nanowires when beam is subjected to a sinusoidal base excitation. The effect of tip mass on the voltage generation of the PZT nanowire arrays is evaluated experimentally. The final results show the great potential of synthesized piezoelectric nanowire arrays in a wide range of applications, specifically power generation at nanoscale.

  14. Enhanced photothermal conversion in vertically oriented gallium arsenide nanowire arrays.

    PubMed

    Walia, Jaspreet; Dhindsa, Navneet; Flannery, Jeremy; Khodabad, Iman; Forrest, James; LaPierre, Ray; Saini, Simarjeet S

    2014-10-08

    The photothermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm(2). Nanowire temperatures were highly dependent on the nanowire diameter and were determined by measuring the spectral red-shift for both TO and LO phonons. The highest temperatures were observed for 95 nm diameter nanowires, whose top facets and sidewalls heated up to 600 and 440 K, respectively, and decreased significantly for the smaller or larger diameters studied. The diameter-dependent heating is explained by resonant coupling of the incident laser light into optical modes of the nanowires, resulting in increased absorption. Photothermal activity in a given nanowire diameter can be optimized by proper wavelength selection, as confirmed using computer simulations. This demonstrates that the photothermal properties of GaAs nanowires can be enhanced and tuned by using a photonic lattice structure and that smaller nanowire diameters are not necessarily better to achieve efficient photothermal conversion. The diameter and wavelength dependence of the optical coupling could allow for localized temperature gradients by creating arrays which consist of different diameters.

  15. In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

    SciTech Connect

    Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Riechert, Henning; Geelhaar, Lutz; Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich

    2013-09-30

    Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm{sup −1} were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

  16. Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.

    PubMed

    Davydok, Anton; Rieger, Torsten; Biermanns, Andreas; Saqib, Muhammad; Grap, Thomas; Lepsa, Mihail Ion; Pietsch, Ullrich

    2013-08-01

    Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

  17. In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

    NASA Astrophysics Data System (ADS)

    Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich; Riechert, Henning; Geelhaar, Lutz

    2013-09-01

    Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm-1 were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

  18. Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

    PubMed Central

    Davydok, Anton; Rieger, Torsten; Biermanns, Andreas; Saqib, Muhammad; Grap, Thomas; Lepsa, Mihail Ion; Pietsch, Ullrich

    2013-01-01

    Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiOx layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers. PMID:24046494

  19. Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

    PubMed Central

    2012-01-01

    We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybutyl selenide (DtBSe) precursor line pressure from 0 to 0.4 Torr, leading to an increase of the carrier density in the transistor channel of more than two orders of magnitude. By keeping the DtBSe line pressure at 0.1 Torr, the carrier density in the nanowire channel measures ≈ 5 × 1017 cm-3 ensuring the best peak transconductances (> 100 mS/m) together with very low resistivity values (70 Ω × μm) and capacitances in the attofarad range. These results are particularly relevant for further optimization of the nanowire-FET terahertz detectors recently demonstrated. PACS: 73.63.-b, 81.07.Gf, 85.35.-p PMID:22373361

  20. Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth

    PubMed Central

    2015-01-01

    While shell growth engineering to the atomic scale is important for tailoring semiconductor nanowires with superior properties, a precise knowledge of the surface structure and morphology at different stages of this type of overgrowth has been lacking. We present a systematic scanning tunneling microscopy (STM) study of homoepitaxial shell growth of twinned superlattices in zinc blende InAs nanowires that transforms {111}A/B-type facets to the nonpolar {110}-type. STM imaging along the nanowires provides information on different stages of the shell growth revealing distinct differences in growth dynamics of the crystal facets and surface structures not found in the bulk. While growth of a new surface layer is initiated simultaneously (at the twin plane interface) on the {111}A and {111}B nanofacets, the step flow growth proceeds much faster on {111}A compared to {111}B leading to significant differences in roughness. Further, we observe that the atomic scale structures on the {111}B facet is different from its bulk counterpart and that shell growth on this facet occurs via steps perpendicular to the ⟨112⟩B-type directions. PMID:25710727

  1. Multi-peak ferromagnetic resonance in Co nanowires array

    NASA Astrophysics Data System (ADS)

    Kraus, Luděk; Lynnyk, Anna; Azamat, Dmitry; Drahokoupil, Jan; Kopeček, Jaromír; Rameš, Michal

    2017-01-01

    Ferromagnetic resonance in an array of Co nanowires electrolytically deposited into nanoporous alumina template is investigated at four microwave frequencies in the range from 9.3 to 69.7 GHz. The array consists of highly textured hcp Co with hexagonal axes perpendicular to the nanowires. The spectra measured at higher frequencies can be decomposed into four wide resonances peaks. Different mechanisms, which can lead to the multi-peak resonance, are discussed.

  2. Nanowire array and nanowire solar cells and methods for forming the same

    DOEpatents

    Yang, Peidong; Greene, Lori E.; Law, Matthew

    2009-06-09

    Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 .mu.m. They can be formed on any suitable substrate. Photovoltaic devices are also described.

  3. Nanowire array and nanowire solar cells and methods for forming the same

    DOEpatents

    Yang, Peidong; Greene, Lori; Law, Matthew

    2007-09-04

    Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 .mu.m. They can be formed on any suitable substrate. Photovoltaic devices are also described.

  4. Large area, dense silicon nanowire array chemical sensors

    SciTech Connect

    Talin, A. Alec; Hunter, Luke L.; Leonard, Francois; Rokad, Bhavin

    2006-10-09

    The authors present a simple top-down approach based on nanoimprint lithography to create dense arrays of silicon nanowires over large areas. Metallic contacts to the nanowires and a bottom gate allow the operation of the array as a field-effect transistor with very large on/off ratios. When exposed to ammonia gas or cyclohexane solutions containing nitrobenzene or phenol, the threshold voltage of the field-effect transistor is shifted, a signature of charge transfer between the analytes and the nanowires. The threshold voltage shift is proportional to the Hammett parameter and the concentration of the nitrobenzene and phenol analytes.

  5. Electronic and Structural Differences between Wurtzite and Zinc Blende InAs Nanowire Surfaces: Experiment and Theory

    PubMed Central

    2014-01-01

    We determine the detailed differences in geometry and band structure between wurtzite (Wz) and zinc blende (Zb) InAs nanowire (NW) surfaces using scanning tunneling microscopy/spectroscopy and photoemission electron microscopy. By establishing unreconstructed and defect-free surface facets for both Wz and Zb, we can reliably measure differences between valence and conduction band edges, the local vacuum levels, and geometric relaxations to the few-millielectronvolt and few-picometer levels, respectively. Surface and bulk density functional theory calculations agree well with the experimental findings and are used to interpret the results, allowing us to obtain information on both surface and bulk electronic structure. We can thus exclude several previously proposed explanations for the observed differences in conductivity of Wz-Zb NW devices. Instead, fundamental structural differences at the atomic scale and nanoscale that we observed between NW surface facets can explain the device behavior. PMID:25406069

  6. Collective Quantum Phase-Slip Dynamics in Superconducting Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Skacel, Sebastian T.; Voss, Jan N.; Bier, Tobias; Radke, Lucas; Weides, Martin; Rotzinger, Hannes; Mooij, Hans E.; Ustinov, Alexey V.

    2014-03-01

    Superconducting nanowire arrays exhibit quantum phase-slip (QPS) phenomenon if the superconductor has a very high normal-state sheet resistance. We experimentally study QPS effects in arrays of nanowires embedded in a resonant circuit at GHz frequencies. We probe this circuit at ultra-low microwave power, applied flux and mK temperatures. The nanowires are fabricated utilizing aluminium grown in a precisely-controlled oxygen atmosphere. In this way, we aim to control the QPS rate for a given wire width. The wires are defined with conventional electron beam lithography down to a width of 20 nm. We will present the fabrication of the nanowire arrays and first microwave measurements at mK temperatures. Center for Functional Nanostructures, Karlsruhe Institute of Technology, D-76128 Karlsruhe, Germany.

  7. Knocking down highly-ordered large-scale nanowire arrays.

    PubMed

    Pevzner, Alexander; Engel, Yoni; Elnathan, Roey; Ducobni, Tamir; Ben-Ishai, Moshit; Reddy, Koteeswara; Shpaisman, Nava; Tsukernik, Alexander; Oksman, Mark; Patolsky, Fernando

    2010-04-14

    The large-scale assembly of nanowire elements with controlled and uniform orientation and density at spatially well-defined locations on solid substrates presents one of the most significant challenges facing their integration in real-world electronic applications. Here, we present the universal "knocking-down" approach, based on the controlled in-place planarization of nanowire elements, for the formation of large-scale ordered nanowire arrays. The controlled planarization of the nanowires is achieved by the use of an appropriate elastomer-covered rigid-roller device. After being knocked down, each nanowire in the array can be easily addressed electrically, by a simple single photolithographic step, to yield a large number of nanoelectrical devices with an unprecedented high-fidelity rate. The approach allows controlling, in only two simple steps, all possible array parameters, that is, nanowire dimensions, chemical composition, orientation, and density. The resulting knocked-down arrays can be further used for the creation of massive nanoelectronic-device arrays. More than million devices were already fabricated with yields over 98% on substrate areas of up, but not limited to, to 10 cm(2).

  8. Nanomanufacturing Strategy for Aligned Assembly of Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Shin, Kyeong-Sik; Chui, Chi On

    2012-05-01

    The work reported here concerns a proposed nanomanufacturing strategy to assemble aligned quasi-one-dimensional nanostructure arrays with intrinsic and concurrent control over the resultant number, pitch, and linewidth. For the first time, a standard lithography and crystallographic etching approach have been combined to synthesize periodic, sublithographic, and line edge roughness (LER)-free surface arrays for selective conjugation of nanowires. Key experimental modules have been developed, including the formation of LER-free substrate arrays, formation of periodically dissimilar surfaces, selective conjugation of nanowires, and stamping transfer of nanowire arrays. In particular, successful assembly of Si nanowires onto periodic Si/SiO x surfaces and subsequent transfer of the resultant aligned Si nanowire arrays onto a different substrate surface have been repeatedly demonstrated. The dependences and probability of nanowire aligned assembly have also been examined. The proposed strategy is based on a wafer-scale and very large-scale integration (VLSI)-compatible philosophy, and alignment to pre-existing features on the target substrate is also inherently allowed as a side benefit. Besides, LER-free features could be created, which arguably enables extreme linewidth scaling with suppressed variations.

  9. Light absorption and emission in nanowire array solar cells.

    PubMed

    Kupec, Jan; Stoop, Ralph L; Witzigmann, Bernd

    2010-12-20

    Inorganic nanowires are under intense research for large scale solar power generation intended to ultimately contribute a substantial fraction to the overall power mix. Their unique feature is to allow different pathways for the light absorption and carrier transport. In this publication we investigate the properties of a nanowire array acting as a photonic device governed by wave-optical phenomena. We solve the Maxwell equations and calculate the light absorption efficiency for the AM1.5d spectrum and give recommendations on the design. Due to concentration of the incident sunlight at a microscopic level the absorptivity of nanowire solar cells can exceed the absorptivity of an equal amount of material used in thin-film devices. We compute the local density of photon states to assess the effect of emission enhancement, which influences the radiative lifetime of excess carriers. This allows us to compute the efficiency limit within the framework of detailed balance. The efficiency is highly sensitive with respect to the diameter and distance of the nanowires. Designs featuring nanowires below a certain diameter will intrinsically feature low short-circuit current that cannot be compensated even by increasing the nanowire density. Optimum efficiency is not achieved in densely packed arrays, in fact spacing the nanowires further apart (simultaneously decreasing the material use) can even improve efficiency in certain scenarios. We observe absorption enhancement reducing the material use. In terms of carrier generation per material use, nanowire devices can outperform thin-film devices by far.

  10. Cytotoxicity of ZnO Nanowire Arrays on Excitable Cells.

    PubMed

    Wang, Yongchen; Wu, Yu; Quadri, Farhan; Prox, Jordan D; Guo, Liang

    2017-04-07

    Zinc oxide (ZnO) nanowires have been widely studied for their applications in electronics, optics, and catalysts. Their semiconducting, piezoelectric, fluorescent, and antibacterial properties have also attracted broad interest in their biomedical applications. Thus, it is imperative to evaluate the biosafety of ZnO nanowires and their biological effects. In this study, the cellular level biological effects of ZnO nanowire arrays are specifically tested on three types of excitable cells, including NG108-15 neuronal cell line, HL-1 cardiac muscle cell line, and neonatal rat cardiomyocytes. Vertically aligned and densely packed ZnO nanowire arrays are synthesized using a solution-based method and used as a substrate for cell culture. The metabolism levels of all three types of cells cultured on ZnO nanowire arrays are studied using the 3-(4,5-dimethyl-2-thiazolyl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) assays of a full factorial design. Under the studied settings, the results show statistically significant inhibitory effects of ZnO nanowire arrays on the metabolism of NG108-15 and HL-1 cells in comparison to gold, glass, and polystyrene substrates, and on the metabolism of cardiomyocytes in comparison to gold substrate.

  11. Highly stretchable, printable nanowire array optical polarizers.

    PubMed

    Kwon, Soonshin; Lu, Dylan; Sun, Zhelin; Xiang, Jie; Liu, Zhaowei

    2016-09-21

    Designing optical components such as polarizers on substrates with high mechanical deformability have potential to realize new device platforms in photonics, wearable electronics, and sensors. Conventional manufacturing approaches that rely highly on top-down lithography, deposition and the etching process can easily confront compatibility issues and high fabrication complexity. Therefore, an alternative integration scheme is necessary. Here, we demonstrate fabrication of highly flexible and stretchable wire grid polarizers (WGPs) by printing bottom-up grown Ge or Ge/Si core/shell nanowires (NWs) on device substrates in a highly dense and aligned fashion. The maximum contrast ratio of 104 between transverse electric (TE) and transverse magnetic (TM) fields and above 99% (maximum 99.7%) of light blocking efficiency across the visible spectrum range are achieved. Further systematic analyses are performed both in experimental and numerical models to reveal the correspondence between physical factors (coverage ratio of NW arrays and diameter) and polarization efficiency. Moreover, we demonstrate distinctive merits of our approach: (i) high flexibility in the choice of substrates such as glass, plastic, or elastomer; (ii) easy combination with additional novel functionalities, for example, air permeability, flexibility/stretchability, biocompatibility, and a skin-like low mechanical modulus; (iii) selective printing of polarizers on a designated local area.

  12. Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation.

    PubMed

    Liu, Mingzhao; Nam, Chang-Yong; Zhang, Lihua

    2015-12-21

    Here a seedless and template-free technique is demonstrated to scalably grow bismuth nanowires, through thermal evaporation in high vacuum at RT. Conventionally reserved for the fabrication of metal thin films, thermal evaporation deposits bismuth into an array of vertical single crystalline nanowires over a flat thin film of vanadium held at RT, which is freshly deposited by magnetron sputtering or thermal evaporation. By controlling the temperature of the growth substrate the length and width of the nanowires can be tuned over a wide range. Responsible for this novel technique is a previously unknown nanowire growth mechanism that roots in the mild porosity of the vanadium thin film. Infiltrated into the vanadium pores, the bismuth domains (~ 1 nm) carry excessive surface energy that suppresses their melting point and continuously expels them out of the vanadium matrix to form nanowires. This discovery demonstrates the feasibility of scalable vapor phase synthesis of high purity nanomaterials without using any catalysts.

  13. Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si.

    PubMed

    Vukajlovic-Plestina, Jelena; Dubrovskii, Vladimir G; Tütüncuoǧlu, Gözde; Potts, Heidi; Ricca, Ruben; Meyer, Frank; Matteini, Federico; Leran, Jean-Baptiste; I Morral, Anna Fontcuberta

    2016-11-11

    Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.

  14. Anomalous polarization conversion in arrays of ultrathin ferromagnetic nanowires

    NASA Astrophysics Data System (ADS)

    Stashkevich, Andrey A.; Roussigné, Yves; Poddubny, Alexander N.; Chérif, S.-M.; Zheng, Y.; Vidal, Franck; Yagupov, Ilya V.; Slobozhanyuk, Alexei P.; Belov, Pavel A.; Kivshar, Yuri S.

    2015-12-01

    We study the optical properties of arrays of ultrathin cobalt nanowires by means of the Brillouin scattering of light on magnons. We employ the Stokes/anti-Stokes scattering asymmetry to probe the circular polarization of a local electric field induced inside nanowires by linearly polarized light waves. We observe the anomalous polarization conversion of the opposite sign than that in a bulk medium or thick nanowires with a great enhancement of the degree of circular polarization attributed to the unconventional refraction in a nanowire medium. A rigorous simulation of the electric field polarization as a function of the wire diameter and spacing reveals the reversed polarization for a thin sparse wire array, in full quantitative agreement with experimental results.

  15. Dimensional Tailoring of Hydrothermally Grown Zinc Oxide Nanowire Arrays.

    PubMed

    Cheng, Jayce J; Nicaise, Samuel M; Berggren, Karl K; Gradečak, Silvija

    2016-01-13

    Hydrothermally synthesized ZnO nanowire arrays are critical components in a range of nanostructured semiconductor devices. The device performance is governed by relevant nanowire morphological parameters that cannot be fully controlled during bulk hydrothermal synthesis due to its transient nature. Here, we maintain homeostatic zinc concentration, pH, and temperature by employing continuous flow synthesis and demonstrate independent tailoring of nanowire array dimensions including areal density, length, and diameter on device-relevant length scales. By applying diffusion/reaction-limited analysis, we separate the effect of local diffusive transport from the c-plane surface reaction rate and identify direct incorporation as the c-plane growth mechanism. Our analysis defines guidelines for precise and independent control of the nanowire length and diameter by operating in rate-limiting regimes. We validate its utility by using surface adsorbents that limit reaction rate to obtain spatially uniform vertical growth rates across a patterned substrate.

  16. Effect of Si-doping on InAs nanowire transport and morphology

    NASA Astrophysics Data System (ADS)

    Wirths, S.; Weis, K.; Winden, A.; Sladek, K.; Volk, C.; Alagha, S.; Weirich, T. E.; von der Ahe, M.; Hardtdegen, H.; Lüth, H.; Demarina, N.; Grützmacher, D.; Schäpers, Th.

    2011-09-01

    The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

  17. Photoresponse and light trapping in nanowire array-graphene interfaces

    NASA Astrophysics Data System (ADS)

    Huber, Tito; Johnson, Scott; Barclift, Quinton; Brower, Tina; Hunt, Jeffrey H.; Belk, John H.

    2015-03-01

    Graphene is emerging as an optical material that features tunability by electrostatic doping and a photothermoelectric response, however it features low optical absorption. We studied interfaces between nanowire arrays and graphene and also other transparent electrodes such as indium tin oxide films. The nanowire arrays were fabricated using a template method. Graphene was transferred from copper substrates. The interfaces were characterized with a number of tools including Scanning Electron microscopy, Raman spectroscopy and optical reflectance. We also studied the photocurrent through the interface in particular the temporal and wavelength dependence that are revealing of the characteristic thermoelectric origin of the signal. In the photocurrent tests we employed devices composed of nanowire arrays which are capped with the transparent electrode. Interestingly, we observed that the interface has low optical reflectivity and high optical absorption, which we will discuss in terms of enhanced optical trapping. T.H. and S.J. acknowledge support from the National Science Foundation.

  18. Conducting polymer nanowire arrays for high performance supercapacitors.

    PubMed

    Wang, Kai; Wu, Haiping; Meng, Yuena; Wei, Zhixiang

    2014-01-15

    This Review provides a brief summary of the most recent research developments in the fabrication and application of one-dimensional ordered conducting polymers nanostructure (especially nanowire arrays) and their composites as electrodes for supercapacitors. By controlling the nucleation and growth process of polymerization, aligned conducting polymer nanowire arrays and their composites with nano-carbon materials can be prepared by employing in situ chemical polymerization or electrochemical polymerization without a template. This kind of nanostructure (such as polypyrrole and polyaniline nanowire arrays) possesses high capacitance, superior rate capability ascribed to large electrochemical surface, and an optimal ion diffusion path in the ordered nanowire structure, which is proved to be an ideal electrode material for high performance supercapacitors. Furthermore, flexible, micro-scale, threadlike, and multifunctional supercapacitors are introduced based on conducting polyaniline nanowire arrays and their composites. These prototypes of supercapacitors utilize the high flexibility, good processability, and large capacitance of conducting polymers, which efficiently extend the usage of supercapacitors in various situations, and even for a complicated integration system of different electronic devices.

  19. Electrochemically synthesized magnetic nanowire heterostructures and arrays for acoustic sensing

    NASA Astrophysics Data System (ADS)

    McGary, Patrick David

    Biological cilia in humans and animals serve many functions, including sensing of acoustic and sensory signals and actuation for mobility in small species or for motion of bodily fluids in larger species. This work sought to fabricate nanowire arrays as artificial cilia. Arrays of tiny sensors at nanoscale dimensions have theoretical advantages to macroscale sensors including higher spatial resolution, miniscule size, and higher ultimate strength for each sensing element. Theoretical investigations showed that a magnetic/non-magnetic heterostructure would enable nanowires with improved sensitivity over single element nanowires. Here, nanowire structures included a soft magnetostrictive sensing segment (such as Ni or Fe1-xGax [also called galfenol]), a permanent magnetic segment to provide an integrated magnetic bias, and a long and hard non-magnetic end segment to increase the viscous drag force of the fluid on the nanowire. Galfenol is a new large magnetostrictive material that has moderate magnetostriction but excellent mechanical properties. This work included the first successful electroplating process for this unique alloy. This enabled the fabrication of these alloys into nanoscopic form. These nanowire structures were grown into nanoporous anodic aluminum oxide (AAO) templates using a robust two-step anodization process. When grown at the proper conditions (temperature, electrolyte, and voltage), the templates contained highly-ordered nanopores with small diameters (10-100 nm), short center-to-center distances (25-250 nm), and long lengths (0.1-100 mum). Metal contacts were deposited onto one side of the templates, and magnetostrictive, magnetic, and non-magnetic materials were sequentially electrodeposited into the nanopores. Controlling the non-magnetic segment lengths enabled control of the nanowire resonant frequency. By using graded nanowire lengths across the array, frequency filtering as a pre-filter for subsequent signal processing could be performed

  20. Thermal conductivity of silicon nanowire arrays with controlled roughness

    SciTech Connect

    Feser, JP; Sadhu, JS; Azeredo, BP; Hsu, KH; Ma, J; Kim, J; Seong, M; Fang, NX; Li, XL; Ferreira, PM; Sinha, S; Cahill, DG

    2012-12-01

    A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767456

  1. Crystallographic alignment of high-density gallium nitride nanowire arrays.

    PubMed

    Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

    2004-08-01

    Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

  2. Efficient Multiterminal Spectrum Splitting via a Nanowire Array Solar Cell

    PubMed Central

    2015-01-01

    Nanowire-based solar cells opened a new avenue for increasing conversion efficiency and rationalizing material use by growing different III–V materials on silicon substrates. Here, we propose a multiterminal nanowire solar cell design with a theoretical conversion efficiency of 48.3% utilizing an efficient lateral spectrum splitting between three different III–V material nanowire arrays grown on a flat silicon substrate. This allows choosing an ideal material combination to achieve the proper spectrum splitting as well as fabrication feasibility. The high efficiency is possible due to an enhanced absorption cross-section of standing nanowires and optimization of the geometric parameters. Furthermore, we propose a multiterminal contacting scheme that can be fabricated with a technology close to standard CMOS. As an alternative we also consider a single power source with a module level voltage matching. These new concepts open avenues for next-generation solar cells for terrestrial and space applications. PMID:26878027

  3. Phonon spectroscopy in a Bi2Te3 nanowire array

    NASA Astrophysics Data System (ADS)

    Bessas, Dimitrios; Töllner, William; Aabdin, Zainul; Peranio, Nicola; Sergueev, Ilya; Wille, Hans-Christian; Eibl, Oliver; Nielsch, Kornelius; Hermann, Raphaël P.

    2013-10-01

    The lattice dynamics in an array of 56 nm diameter Bi2Te3 nanowires embedded in a self-ordered amorphous alumina membrane were investigated microscopically using 125Te nuclear inelastic scattering. The element specific density of phonon states is measured on nanowires in two perpendicular orientations and the speed of sound is extracted. Combined high energy synchrotron radiation diffraction and transmission electron microscopy was carried out on the same sample and the crystallinity was investigated. The nanowires grow almost perpendicular to the c-axis, partly with twinning. The average speed of sound in the 56 nm diameter Bi2Te3 nanowires is ~7% smaller with respect to bulk Bi2Te3 and a decrease in the macroscopic lattice thermal conductivity by ~13% due to nanostructuration and to the reduced speed of sound is predicted.

  4. Efficient Multiterminal Spectrum Splitting via a Nanowire Array Solar Cell.

    PubMed

    Dorodnyy, Alexander; Alarcon-Lladó, Esther; Shklover, Valery; Hafner, Christian; Fontcuberta I Morral, Anna; Leuthold, Juerg

    2015-09-16

    Nanowire-based solar cells opened a new avenue for increasing conversion efficiency and rationalizing material use by growing different III-V materials on silicon substrates. Here, we propose a multiterminal nanowire solar cell design with a theoretical conversion efficiency of 48.3% utilizing an efficient lateral spectrum splitting between three different III-V material nanowire arrays grown on a flat silicon substrate. This allows choosing an ideal material combination to achieve the proper spectrum splitting as well as fabrication feasibility. The high efficiency is possible due to an enhanced absorption cross-section of standing nanowires and optimization of the geometric parameters. Furthermore, we propose a multiterminal contacting scheme that can be fabricated with a technology close to standard CMOS. As an alternative we also consider a single power source with a module level voltage matching. These new concepts open avenues for next-generation solar cells for terrestrial and space applications.

  5. Fe3O4 nanowire arrays synthesized in AAO templates

    NASA Astrophysics Data System (ADS)

    Xue, D. S.; Zhang, L. Y.; Gui, A. B.; Xu, X. F.

    2005-02-01

    Fe3O4 nanowire arrays with an average diameter of about 120 nm and lengths up to 8 μm were synthesized in anodic aluminum oxide templates through electrodepositing and heat treating a precursor β-FeOOH. The nanowires have a polycrystalline spinel structure with a=8.31 Å and each nanowire is composed of fine particles. Influences of the sintering and the reducing temperatures on the products have been demonstrated by Mössbauer spectra and X-ray diffraction. It was found that high-coercivity nanowires can be obtained when the precursor was sintered at 500 °C in air and then reduced at 325 °C in H2. Hysteresis loops measured at room temperature show a clear perpendicular magnetic anisotropy.

  6. Recent progress in patterned silicon nanowire arrays: fabrication, properties and applications.

    PubMed

    Zhang, Yan; Qiu, Teng; Zhang, Wenjun; Chu, Paul K

    2011-01-01

    Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to material synthesis and future nanoscale optoelectronic devices that employ silicon. The recent advances in manipulating patterned silicon nanowire arrays and patents are reviewed with a focus on the progress of nanowire fabrication and applications.

  7. Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

    NASA Astrophysics Data System (ADS)

    Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

    2016-11-01

    We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

  8. First-principles study of quantum confinement and surface effects on the electronic properties of InAs nanowires

    SciTech Connect

    Ning, Feng; Tang, Li-Ming Zhang, Yong; Chen, Ke-Qiu

    2013-12-14

    We have used first principles methods to systematically investigate the quantum confinement effect on the electronic properties of zinc-blende (ZB) and wurtzite (WZ) InAs nanowires (NWs) with different orientations and diameters, and compared their electronic properties before and after pseudo-hydrogen passivation. The results show that the calculated carrier effective masses are dependent on the NW diameter, except for [110] ZB NWs, and the hole effective masses of [111] ZB NWs are larger than the electron effective masses when the NW diameter is ≥26 Å. The band alignments of [111] ZB and [0001] WZ NWs reveal that the effect of quantum confinement on the conduction bands is greater than on the valence bands, and the position of the valence band maximum level changes little with increasing NW diameter. The pseudo-hydrogen passivated NWs have larger band gaps than the corresponding unpassivated NWs. The carrier effective masses and mobilities can be adjusted by passivating the surface dangling bonds.

  9. Low temperature transport in p-doped InAs nanowires

    SciTech Connect

    Upadhyay, S.; Jespersen, T. S.; Madsen, M. H.; Krogstrup, P.; Nygård, J.

    2013-10-14

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

  10. Low temperature transport in p-doped InAs nanowires

    NASA Astrophysics Data System (ADS)

    Upadhyay, S.; Jespersen, T. S.; Madsen, M. H.; Krogstrup, P.; Nygârd, J.

    2013-10-01

    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

  11. Growth direction control of InAs nanowires on (0 0 1) Si substrate with SiO2/Si nano-trench

    NASA Astrophysics Data System (ADS)

    Chen, Wei-Chieh; Chen, Li-Hsing; Lin, Yen-Ting; Lin, Hao-Hsiung

    2017-04-01

    We report on direction control of InAs nanowire (NW) grown on (0 0 1) Si substrate with SiO2/Si nanotrench. A two-step method was used to enhance the direction control. In the first step, we aligned the In beam with the longitudinal axis of the trench utilizing shadowing effect to nucleate InAs on only one trench end. In the second step, the growth proceeded with substrate rotation. Comparing with NW growths using only one step, either the first one or the second one, two-step growth demonstrates highly directional NWs. Transmission electron microscope (TEM) and one dimensional Fourier image analyses show that InAs NW can be easily grown from the (1 bar 1 1) Si residue, which was left at trench ends by fabrication process, due to the tiny residue volume and low V/III ratio. In contrast, InAs nucleus, located at the center of the trench, developed into island and cluster because of the high V/III ratio and large lattice mismatch.

  12. Solution-Liquid-Solid Synthesis of Hexagonal Nickel Selenide Nanowire Arrays with a Nonmetal Catalyst.

    PubMed

    Xu, Kun; Ding, Hui; Jia, Kaicheng; Lu, Xiuli; Chen, Pengzuo; Zhou, Tianpei; Cheng, Han; Liu, Si; Wu, Changzheng; Xie, Yi

    2016-01-26

    Inorganic nanowire arrays hold great promise for next-generation energy storage and conversion devices. Understanding the growth mechanism of nanowire arrays is of considerable interest for expanding the range of applications. Herein, we report the solution-liquid-solid (SLS) synthesis of hexagonal nickel selenide nanowires by using a nonmetal molecular crystal (selenium) as catalyst, which successfully brings SLS into the realm of conventional low-temperature solution synthesis. As a proof-of-concept application, the NiSe nanowire array was used as a catalyst for electrochemical water oxidation. This approach offers a new possibility to design arrays of inorganic nanowires.

  13. Near-unity broadband absorption designs for semiconducting nanowire arrays via localized radial mode excitation.

    PubMed

    Fountaine, Katherine T; Kendall, Christian G; Atwater, Harry A

    2014-05-05

    We report design methods for achieving near-unity broadband light absorption in sparse nanowire arrays, illustrated by results for visible absorption in GaAs nanowires on Si substrates. Sparse (<5% fill fraction) nanowire arrays achieve near unity absorption at wire resonant wavelengths due to coupling into 'leaky' radial waveguide modes of individual wires and wire-wire scattering processes. From a detailed conceptual development of radial mode resonant absorption, we demonstrate two specific geometric design approaches to achieve near unity broadband light absorption in sparse nanowire arrays: (i) introducing multiple wire radii within a small unit cell array to increase the number of resonant wavelengths, yielding a 15% absorption enhancement relative to a uniform nanowire array and (ii) tapering of nanowires to introduce a continuum of diameters and thus resonant wavelengths excited within a single wire, yielding an 18% absorption enhancement over a uniform nanowire array.

  14. Prediction of phonon thermal transport in thin GaAs, InAs and InP nanowires by molecular dynamics simulations: influence of the interatomic potential.

    PubMed

    Carrete, J; Longo, R C; Gallego, L J

    2011-05-06

    A number of different potentials are currently being used in molecular dynamics simulations of semiconductor nanostructures. Confusion can arise if an inappropriate potential is used. To illustrate this point, we performed direct molecular dynamics simulations to predict the room temperature lattice thermal conductivity λ of thin GaAs, InAs and InP nanowires. In each case, simulations performed using the classical Harrison potential afforded values of λ about an order of magnitude smaller than those obtained using more elaborate potentials (an Abell-Tersoff, as parameterized by Hammerschmidt et al for GaAs and InAs, and a potential of Vashishta type for InP). These results will be a warning to those wishing to use computer simulations to orient the development of quasi-one-dimensional systems as heat sinks or thermoelectric devices.

  15. Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

    NASA Astrophysics Data System (ADS)

    Hertenberger, S.; Rudolph, D.; Bolte, S.; Döblinger, M.; Bichler, M.; Spirkoska, D.; Finley, J. J.; Abstreiter, G.; Koblmüller, G.

    2011-03-01

    The growth mechanism of self-induced InAs nanowires (NWs) grown on Si (111) by molecular beam epitaxy was investigated by in situ reflection high energy electron diffraction and ex situ scanning and transmission electron microscopy. Abrupt morphology transition and in-plane strain relaxation revealed that InAs NWs nucleate without any significant delay and under the absence of indium (In) droplets. These findings are independent of the As/In-flux ratio, revealing entirely linear vertical growth rate and nontapered NWs. No evidence of In droplets nor associated change in the NW apex morphology was observed for various growth termination procedures. These results highlight the absence of vapor-liquid-solid growth, providing substantial benefits for realization of atomically abrupt doping and composition profiles in future axial InAs-based NW heterostructures on Si.

  16. Angular dependence of the coercivity in arrays of ferromagnetic nanowires

    NASA Astrophysics Data System (ADS)

    Holanda, J.; Silva, D. B. O.; Padrón-Hernández, E.

    2015-03-01

    We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth.

  17. Steering epitaxial alignment of Au, Pd, and AuPd nanowire arrays by atom flux change.

    PubMed

    Yoo, Youngdong; Seo, Kwanyong; Han, Sol; Varadwaj, Kumar S K; Kim, Hyun You; Ryu, Ji Hoon; Lee, Hyuck Mo; Ahn, Jae Pyoung; Ihee, Hyotcherl; Kim, Bongsoo

    2010-02-10

    We have synthesized epitaxial Au, Pd, and AuPd nanowire arrays in vertical or horizontal alignment on a c-cut sapphire substrate. We show that the vertical and horizontal nanowire arrays grow from half-octahedral seeds by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. The alignment of nanowires can be steered by changing the atom flux. At low atom deposition flux vertical nanowires grow, while at high atom flux horizontal nanowires grow. Similar vertical/horizontal epitaxial growth is also demonstrated on SrTiO(3) substrates. This orientation-steering mechanism is visualized by molecular dynamics simulations.

  18. Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

    PubMed

    Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; Song, Jindong; Doh, Yong-Joo; Yu, Dong

    2015-09-09

    We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.

  19. Synthesis and characterization of silicon nanowire arrays for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Eichfeld, Sarah M.

    The overall objective of this thesis was the development of processes for the fabrication of radial p-n silicon nanowires (SiNWs) using bottom-up nanowire growth techniques on silicon and glass substrates. Vapor-liquid-solid (VLS) growth was carried out on Si(111) substrates using SiCl4 as the silicon precursor. Growth conditions including temperature, PSiCl4, PH2, and position were investigated to determine the optimum growth conditions for epitaxially oriented silicon nanowire arrays. The experiments revealed that the growth rate of the silicon nanowires exhibits a maximum as a function of PSiCl4 and P H2. Gas phase equilibrium calculations were used in conjunction with a mass transport model to explain the experimental data. The modeling results demonstrate a similar maximum in the mass of solid silicon predicted to form as a function of PSiCl4 and PH2, which results from a change in the gas phase concentration of SiHxCly and SiClx species. This results in a shift in the process from growth to etching with increasing PSiCl4. In general, for the atmospheric pressure conditions employed in this study, growth at higher temperatures >1000°C and higher SiCl4 concentrations gave the best results. The growth of silicon nanowire arrays on anodized alumina (AAO)-coated glass substrates was also investigated. Glass will not hold up to the high temperatures required for Si nanowire growth with SiCl4 so SiH 4 was used as the Si precursor instead. Initial studies were carried out to measure the resistivity of p-type and n-type silicon nanowires grown in freestanding AAO membranes. A series of nanowire samples were grown in which the doping and the nanowire length inside the membrane were varied. Circular metal contacts were deposited on the top surface of the membranes and the resistance of the nanowire arrays was measured. The measured resistance versus nanowire length was plotted and the nanowire resistivity was extracted from the slope. The resistivity of the silicon

  20. Comparative study of absorption in tilted silicon nanowire arrays for photovoltaics

    PubMed Central

    2014-01-01

    Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass thin film of the equivalent amount of material. Tilted nanowire arrays, with the same amount of material, exhibit improved performance over vertical nanowire arrays across a broad range of tilt angles (from 38° to 72°). The optimum tilt of 53° has an improvement of 8.6% over that of vertical nanowire arrays and 80.4% over that of the ideal double-pass thin film. Tilted nanowire arrays exhibit improved absorption over the solar spectrum compared with vertical nanowires since the tilt allows for the excitation of additional modes besides the HE 1m modes that are excited at normal incidence. We also observed that tilted nanowire arrays have improved performance over vertical nanowire arrays for a large range of incidence angles (under about 60°). PMID:25435833

  1. Comparative study of absorption in tilted silicon nanowire arrays for photovoltaics.

    PubMed

    Kayes, Md Imrul; Leu, Paul W

    2014-01-01

    Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass thin film of the equivalent amount of material. Tilted nanowire arrays, with the same amount of material, exhibit improved performance over vertical nanowire arrays across a broad range of tilt angles (from 38° to 72°). The optimum tilt of 53° has an improvement of 8.6% over that of vertical nanowire arrays and 80.4% over that of the ideal double-pass thin film. Tilted nanowire arrays exhibit improved absorption over the solar spectrum compared with vertical nanowires since the tilt allows for the excitation of additional modes besides the HE 1m modes that are excited at normal incidence. We also observed that tilted nanowire arrays have improved performance over vertical nanowire arrays for a large range of incidence angles (under about 60°).

  2. Dendritic Heterojunction Nanowire Arrays for High-Performance Supercapacitors

    NASA Astrophysics Data System (ADS)

    Zou, Rujia; Zhang, Zhenyu; Yuen, Muk Fung; Hu, Junqing; Lee, Chun-Sing; Zhang, Wenjun

    2015-01-01

    Herein, we designed and synthesized for the first time a series of 3D dendritic heterojunction arrays on Ni foam substrates, with NiCo2S4 nanowires as cores and NiCo2O4, NiO, Co3O4, and MnO2 nanowires as branches, and studied systematically their electrochemical performance in comparison with their counterparts in core/shell structure. Attributed to the following reasons: (1) both core and branch are pseudocapacitively active materials, (2) the special dendritic structure with considerable inter-nanowire space enables easy access of electrolyte to the core and branch surfaces, and (3) the highly conductive NiCo2S4 nanowire cores provide ``superhighways'' for charge transition, NiCo2S4-cored dendritic heterojunction electrodes synergistically lead to ultrahigh specific capacitance, good rate capability, and excellent cycling life. These results of core/branch dentritic heterojunction arrays is universially superior to their core/shell conterparts, thus this is a significant improvement of overall electrochemical performance.

  3. Dendritic Heterojunction Nanowire Arrays for High-Performance Supercapacitors

    PubMed Central

    Zou, Rujia; Zhang, Zhenyu; Yuen, Muk Fung; Hu, Junqing; Lee, Chun-Sing; Zhang, Wenjun

    2015-01-01

    Herein, we designed and synthesized for the first time a series of 3D dendritic heterojunction arrays on Ni foam substrates, with NiCo2S4 nanowires as cores and NiCo2O4, NiO, Co3O4, and MnO2 nanowires as branches, and studied systematically their electrochemical performance in comparison with their counterparts in core/shell structure. Attributed to the following reasons: (1) both core and branch are pseudocapacitively active materials, (2) the special dendritic structure with considerable inter-nanowire space enables easy access of electrolyte to the core and branch surfaces, and (3) the highly conductive NiCo2S4 nanowire cores provide “superhighways” for charge transition, NiCo2S4-cored dendritic heterojunction electrodes synergistically lead to ultrahigh specific capacitance, good rate capability, and excellent cycling life. These results of core/branch dentritic heterojunction arrays is universially superior to their core/shell conterparts, thus this is a significant improvement of overall electrochemical performance. PMID:25597402

  4. Selective-Area Growth of InAs Nanowires with Metal/Dielectric Composite Mask and Their Application to Vertical Surrounding-Gate Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Kobayashi, Yuta; Kohashi, Yoshinori; Hara, Shinjiro; Motohisa, Junichi

    2013-04-01

    We attempted the selective-area metalorganic vapor-phase epitaxial (SA-MOVPE) growth of InAs nanowires (NWs) using a tungsten/dielectric composite mask and fabricated nanowire vertical surrounding-gate field-effect transistors (NW-VSG-FETs), where tungsten served as both the mask in SA-MOVPE growth and the bottom electrode of the FET. The growth of NWs with diameters as low as 100 nm was demonstrated using the composite mask. The fabricated NW-VSG-FET exhibited improved drain current density as compared with our previously reported NW-VSG-FETs, and a larger on/off ratio as compared with previously reported NW-VSG-FETs having similar electrodes at the bottoms of NWs.

  5. On-surface formation of metal nanowire transparent top electrodes on CdSe nanowire array-based photoconductive devices.

    PubMed

    Azulai, Daniel; Givan, Uri; Shpaisman, Nava; Belenkova, Tatyana Levi; Gilon, Hagit; Patolsky, Fernando; Markovich, Gil

    2012-06-27

    A simple wet chemical approach was developed for a unique on-surface synthesis of transparent conductive films consisting of ultrathin gold/silver nanowires directly grown on top of CdSe nanowire array photoconductive devices enclosed in polycarbonate membranes. The metal nanowire film formed an ohmic contact to the semiconductor nanowires without additional treatment. The sheet resistance and transparency of the metal nanowire arrays could be controlled by the number of metal nanowire layers deposited, ranging from ∼98-99% transmission through the visible range and several kOhm/sq sheet resistance for a single layer, to 80-85% transmission and ∼100 Ohm/sq sheet resistance for 4 layers.

  6. Polaronic transport and current blockades in epitaxial silicide nanowires and nanowire arrays.

    PubMed

    Iancu, Violeta; Zhang, X-G; Kim, Tae-Hwan; Menard, Laurent D; Kent, P R C; Woodson, Michael E; Ramsey, J Michael; Li, An-Ping; Weitering, Hanno H

    2013-08-14

    Crystalline micrometer-long YSi2 nanowires with cross sections as small as 1 × 0.5 nm(2) can be grown on the Si(001) surface. Their extreme aspect ratios make electron conduction within these nanowires almost ideally one-dimensional, while their compatibility with the silicon platform suggests application as metallic interconnect in Si-based nanoelectronic devices. Here we combine bottom-up epitaxial wire synthesis in ultrahigh vacuum with top-down miniaturization of the electrical measurement probes to elucidate the electronic conduction mechanism of both individual wires and arrays of nanowires. Temperature-dependent transport through individual nanowires is indicative of thermally assisted tunneling of small polarons between atomic-scale defect centers. In-depth analysis of complex wire networks emphasize significant electronic crosstalk between the nanowires due to the long-range Coulomb fields associated with polaronic charge fluctuations. This work establishes a semiquantitative correlation between the density and distributions of atomic-scale defects and resulting current-voltage characteristics of nanoscale network devices.

  7. Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays.

    PubMed

    Lin, Linhan; Guo, Siping; Sun, Xianzhong; Feng, Jiayou; Wang, Yan

    2010-08-05

    Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like porous silicon (PS), these porous nanowires also show excellent photoluminescence (PL) properties. The PL intensity increases with porosity, with an enhancement of about 100 times observed in our condition experiments. A "red-shift" of the PL peak is also found. Further studies prove that the PL spectrum should be decomposed into two elementary PL bands. The peak at 850 nm is the emission of the localized excitation in the nanoporous structure, while the 750-nm peak should be attributed to the surface-oxidized nanostructure. It could be confirmed from the Fourier transform infrared spectroscopy analyses. These porous SiNW arrays may be useful as the nanoscale optoelectronic devices.

  8. III-nitride core–shell nanowire arrayed solar cells.

    PubMed

    Wierer, Jonathan J; Li, Qiming; Koleske, Daniel D; Lee, Stephen R; Wang, George T

    2012-05-17

    A solar cell based on a hybrid nanowire–film architecture consisting of a vertically aligned array of InGaN/GaN multi-quantum well core–shell nanowires which are electrically connected by a coalesced p-InGaN canopy layer is demonstrated. This unique hybrid structure allows for standard planar device processing, solving a key challenge with nanowire device integration, while enabling various advantages by the nanowire absorbing region such as higher indium composition InGaN layers by elastic strain relief, more efficient carrier collection in thinner layers, and enhanced light trapping from nano-scale optical index changes. This hybrid structure is fabricated into working solar cells exhibiting photoresponse out to 2.1 eV and short-circuit current densities of ~1 mA cm(-2) under 1 sun AM1.5G. This proof-of-concept nanowire-based device demonstrates a route forward for high-efficiency III-nitride solar cells.

  9. Ordering Ag nanowire arrays by spontaneous spreading of volatile droplet on solid surface

    PubMed Central

    Dai, Han; Ding, Ruiqiang; Li, Meicheng; Huang, Jinjer; Li, Yingfeng; Trevor, Mwenya

    2014-01-01

    Large-area Ag nanowires are ordered by spontaneous spreading of volatile droplet on a wettable solid surface. Compared with other nanowires orientation methods, radial shaped oriented Ag nanowires in a large ring region are obtained in an extremely short time. Furthermore, the radial shaped oriented Ag nanowires are transferred and aligned into one direction. Based on the hydrodynamics, the coactions among the microfluid, gravity effect and the adhesion of substrate on the orientation of the Ag nanowires are clearly revealed. This spreading method opens an efficient way for extreme economic, efficient and “green” way for commercial producing ordered nanowire arrays. PMID:25339118

  10. Magnetic Properties of Feni Nanowire Arrays Assembled on Porous AAO Template by AC Electrodeposition

    NASA Astrophysics Data System (ADS)

    Wang, Pangpang; Gao, Lumei; Wang, Liqun; Zhang, Dongyan; Yang, Sen; Song, Xiaoping; Qiu, Zhiyong; Murakami, Ri-Ichi

    FeNi nanowire arrays were fabricated into the pores of porous alumina template by a simple alternating current electrodeposition method in this work. FeNi nanowires with different diameters were obtained depending on the pore size arrangement of alumina templates. FeNi nanowire arrays exhibited obviously magnetic anisotropy, and the easy axis was along the nanowires. When the applied magnetic field was parallel to the nanowires, the coercivity (Hc) and the maximum remnant ratio (Mr/Ms) are considerable higher than those while the magnetic field perpendicular to the nanowires. FeNi nanowires prepared in this work are expected to be utilized as the perpendicular magnetic recording media. The magnetic domain structure and the magnetizing mechanism of FeNi nanowires were also been discussed.

  11. Multi-spectral optical absorption in substrate-free nanowire arrays

    SciTech Connect

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray; Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  12. Synthesis, Magnetic Anisotropy and Optical Properties of Preferred Oriented Zinc Ferrite Nanowire Arrays

    PubMed Central

    2010-01-01

    Preferred oriented ZnFe2O4 nanowire arrays with an average diameter of 16 nm were fabricated by post-annealing of ZnFe2 nanowires within anodic aluminum oxide templates in atmosphere. Selected area electron diffraction and X-ray diffraction exhibit that the nanowires are in cubic spinel-type structure with a [110] preferred crystallite orientation. Magnetic measurement indicates that the as-prepared ZnFe2O4 nanowire arrays reveal uniaxial magnetic anisotropy, and the easy magnetization direction is parallel to the axis of nanowire. The optical properties show the ZnFe2O4 nanowire arrays give out 370–520 nm blue-violet light, and their UV absorption edge is around 700 nm. The estimated values of direct and indirect band gaps for the nanowires are 2.23 and 1.73 eV, respectively. PMID:20676211

  13. Large-scale fabrication of vertically aligned ZnO nanowire arrays

    DOEpatents

    Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

    2013-02-05

    In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

  14. 2D and 3D ordered arrays of Co magnetic nanowires

    NASA Astrophysics Data System (ADS)

    Garcia, J.; Prida, V. M.; Vega, V.; Rosa, W. O.; Caballero-Flores, R.; Iglesias, L.; Hernando, B.

    2015-06-01

    Cobalt nanowire arrays spatially distributed in 2D and 3D arrangements have been performed by pulsed electrodeposition into the pores of planar and cylindrical nanoporous anodic alumina membranes, respectively. Morphological characterization points out the good filling factor reached by electroplated Co nanowires in both kinds of alumina membranes exhibiting hexagonally self-ordered porous structures. Co nanowires grown in both kinds of alumina templates exhibit the same crystalline phases. DC magnetometry and First Order Reversal Curve (FORC) analysis were carried out in order to determine the overall magnetic behavior for both nanowire array geometries. It is found that when the Co nanowires of two kinds of arrays are perpendicularly magnetized, both hysteresis loops are identical, suggesting that neither the intrinsic magnetic behavior of the nanowires nor the collective one depend on the arrays geometry. FORC analysis performed along the radial direction of the Co nanowire arrays embedded in the cylindrical alumina template reveals that the contribution of each nanowire to the magnetization reversal process involves its specific orientation with respect to the applied field direction. Furthermore, the comparison between the magnetic properties for both kinds of Co nanowire arrays allows discussing about the effect of the cylindrical geometry of the template on the magnetostatic interaction among nanowires.

  15. Fabrication and magnetic properties of Ni nanowire arrays with ultrahigh axial squareness.

    PubMed

    Tian, F; Huang, Z P; Whitmore, L

    2012-06-28

    Poly- and single-crystalline Ni nanowire arrays showing ultrahigh axial squareness are fabricated by direct-current electrodeposition in pores of anodic aluminum oxide templates. High voltage is shown to be the key in order for Ni nanowires to have a (220) preferred orientation. 2-Dimensional nucleation theory is used to understand the growth of the nanowires. Based on the structure and growth analyses, the magnetic properties of different kinds of nanowires are explained.

  16. Ordering Ag nanowire arrays by a glass capillary: a portable, reusable and durable SERS substrate.

    PubMed

    Liu, Jian-Wei; Wang, Jin-Long; Huang, Wei-Ran; Yu, Le; Ren, Xi-Feng; Wen, Wu-Cheng; Yu, Shu-Hong

    2012-01-01

    Assembly of nanowires into ordered macroscopic structures with new functionalities has been a recent focus. In this Letter, we report a new route for ordering hydrophilic Ag nanowires with high aspect ratio by flowing through a glass capillary. The present glass capillary with well-defined silver nanowire films inside can serve as a portable and reusable substrate for surface-enhanced Raman spectroscopy (SERS), which may provide a versatile and promising platform for detecting mixture pollutions. By controlling the flow parameters of nanowire suspensions, initially random Ag nanowires can be aligned to form nanowire arrays with tunable density, forming cambered nanowire films adhered onto the inner wall of the capillary. Compared with the planar ordered Ag nanowire films by the Langmuir-Blodgett (LB) technique, the cambered nanowire films show better SERS performance.

  17. Multiscale Study of Plasmonic Scattering and Light Trapping Effect in Silicon Nanowire Array Solar Cells.

    PubMed

    Meng, Lingyi; Zhang, Yu; Yam, ChiYung

    2017-02-02

    Nanometallic structures that support surface plasmons provide new ways to confine light at deep-subwavelength scales. The effect of light scattering in nanowire array solar cells is studied by a multiscale approach combining classical electromagnetic (EM) and quantum mechanical simulations. A photovoltaic device is constructed by integrating a silicon nanowire array with a plasmonic silver nanosphere. The light scatterings by plasmonic element and nanowire array are obtained via classical EM simulations, while current-voltage characteristics and optical properties of the nanowire cells are evaluated quantum mechanically. We found that the power conversion efficiency (PCE) of photovoltaic device is substantially improved due to the local field enhancement of the plasmonic effect and light trapping by the nanowire array. In addition, we showed that there exists an optimal nanowire number density in terms of optical confinement and solar cell PCE.

  18. Statistical magnetometry on isolated NiCo nanowires and nanowire arrays: a comparative study

    NASA Astrophysics Data System (ADS)

    Sergelius, Philip; Garcia Fernandez, Javier; Martens, Stefan; Zocher, Michael; Böhnert, Tim; Vega Martinez, Victor; de la Prida, Victor Manuel; Görlitz, Detlef; Nielsch, Kornelius

    2016-04-01

    The first-order reversal curve (FORC) method can be used to extract information about the interaction and switching field distribution of ferromagnetic nanowire arrays, yet it remains challenging to acquire reliable values. Within ordered pores of anodic alumina templates we electrochemically synthesize eight different Ni x Co1-x samples with x varying between 0.05 and 1. FORC diagrams are acquired using vibrating sample magnetometry. By dissolving the template and using the magneto-optical Kerr effect, we measure the hysteresis loops of up to 100 different and isolated nanowires for each sample to gain precise information about the intrinsic switching field distribution. Values of the interaction field are extracted from a deshearing of the major hysteresis loop. We present a comparative study between all methods in order to evaluate and reinforce current FORC theory with experimental findings.

  19. General technique for fabricating large arrays of nanowires

    NASA Astrophysics Data System (ADS)

    Jorritsma, J.; Gijs, M. A. M.; Kerkhof, J. M.; Stienen, J. G. H.

    1996-09-01

    Large arrays of parallel metallic nanowires ranging from 20 - 120 nm in width are fabricated using a general and relatively simple technique. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V-shaped grooves of 200 nm period. Subsequently metal is evaporated at an angle onto the V-grooved substrates, naturally resulting in thousands of ultra-narrow metallic wires in parallel. Resistance measurements proof that as-prepared wires are electrically continuous.

  20. Position-controlled [100] InP nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Plissard, Sébastien; Hocevar, Moïra; Vu, Thuy T. T.; Zehender, Tilman; Immink, George G. W.; Verheijen, Marcel A.; Haverkort, Jos; Bakkers, Erik P. A. M.

    2012-01-01

    We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.

  1. Hyperbolic and plasmonic properties of silicon/Ag aligned nanowire arrays.

    PubMed

    Prokes, S M; Glembocki, Orest J; Livenere, J E; Tumkur, T U; Kitur, J K; Zhu, G; Wells, B; Podolskiy, V A; Noginov, M A

    2013-06-17

    The hyperbolic and plasmonic properties of silicon nanowire/Ag arrays have been investigated. The aligned nanowire arrays were formed and coated by atomic layer deposition of Ag, which itself is a metamaterial due to its unique mosaic film structure. The theoretical and numerical studies suggest that the fabricated arrays have hyperbolic dispersion in the visible and IR ranges of the spectrum. The theoretical predictions have been indirectly confirmed by polarized reflection spectra, showing reduction of the reflection in p polarization in comparison to that in s polarization. Studies of dye emission on top of Si/Ag nanowire arrays show strong emission quenching and shortening of dye emission kinetics. This behavior is also consistent with the predictions for hyperbolic media. The measured SERS signals were enhanced by almost an order of magnitude for closely packed and aligned nanowires, compared to random nanowire composites. These results agree with electric field simulations of these array structures.

  2. Electrochemical oxidation of methanol on Pt nanoparticles composited MnO 2 nanowire arrayed electrode

    NASA Astrophysics Data System (ADS)

    Zhao, Guang-Yu; Li, Hu-Lin

    2008-03-01

    By use of the membrane-template synthesis route, MnO 2 nanowire arrayed electrodes are successfully synthesized by means of the anodic deposition technique. The Pt nanoparticles composited MnO 2 nanowire arrayed electrodes (PME) are obtained through depositing Pt on MnO 2 nanowire arrayed electrode by cathode deposition technique. For comparison of electrochemical performance, Pt nanowire arrayed electrodes which have the same amount of Pt with PME are also prepared. The electro-oxidation of methanol on PME and Pt nanowire arrayed electrodes is investigated at room temperature by cyclic voltammetry, which show that about 110 mV decreased overpotential and 2.1-fold enhanced votammetric current are achieved on PME. The chronoamperometry result demonstrates that the resistance to carbon monoxide for PME is improved.

  3. Magnetic domain structure in small diameter magnetic nanowire arrays [rapid communication

    NASA Astrophysics Data System (ADS)

    Qin, Dong-Huan; Zhang, Hao-Li; Xu, Cai-Ling; Xu, Tao; Li, Hu-Lin

    2005-01-01

    Fe 0.3Co 0.7 alloy nanowire arrays were prepared by ac electrodepositing Fe 2+ and Co 2+ into a porous anodic aluminum oxide (PAO) template with diameter about 50 nm. The surface of the samples were polished by 100 nm diamond particle then chemical polishing to give a very smooth surface (below ±10 nm/μm 2). The morphology properties were characterized by SEM and AFM. The bulk magnetic properties and domain structure of nanowire arrays were investigated by VSM and MFM respectively. We found that such alloy arrays showed strong perpendicular magnetic anisotropy with easy axis parallel to nanowire arrays. Each nanowire was in single domain structure with several opposite single domains surrounding it. Additionally, we investigated the domain structure with a variable external magnetic field applied parallel to the nanowire arrays. The MFM results showed a good agreement with our magnetic hysteresis loop.

  4. Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry.

    PubMed

    Fan, Zhiyong; Ho, Johnny C; Jacobson, Zachery A; Razavi, Haleh; Javey, Ali

    2008-08-12

    We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of approximately 80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 x 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.

  5. Light trapping in ZnO nanowire arrays covered with an absorbing shell for solar cells.

    PubMed

    Michallon, Jérôme; Bucci, Davide; Morand, Alain; Zanuccoli, Mauro; Consonni, Vincent; Kaminski-Cachopo, Anne

    2014-06-30

    The absorption properties of ZnO nanowire arrays covered with a semiconducting absorbing shell for extremely thin absorber solar cells are theoretically investigated by optical computations of the ideal short-circuit current density with three-dimensional rigorous coupled wave analysis. The effects of nanowire geometrical dimensions on the light trapping and absorption properties are reported through a comprehensive optical mode analysis. It is shown that the high absorptance of these heterostructures is driven by two different regimes originating from the combination of individual nanowire effects and nanowire arrangement effects. In the short wavelength regime, the absorptance is likely dominated by optical modes efficiently coupled with the incident light and interacting with the nearby nanowires (i.e. diffraction), induced by the period of core shell ZnO nanowire arrays. In contrast, in the long wavelength regime, the absorptance is governed by key optically guided modes, related to the diameter of individual core shell ZnO nanowires.

  6. Thermal Conduction in Vertically Aligned Copper Nanowire Arrays and Composites.

    PubMed

    Barako, Michael T; Roy-Panzer, Shilpi; English, Timothy S; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W; Goodson, Kenneth E

    2015-09-02

    The ability to efficiently and reliably transfer heat between sources and sinks is often a bottleneck in the thermal management of modern energy conversion technologies ranging from microelectronics to thermoelectric power generation. These interfaces contribute parasitic thermal resistances that reduce device performance and are subjected to thermomechanical stresses that degrade device lifetime. Dense arrays of vertically aligned metal nanowires (NWs) offer the unique combination of thermal conductance from the constituent metal and mechanical compliance from the high aspect ratio geometry to increase interfacial heat transfer and device reliability. In the present work, we synthesize copper NW arrays directly onto substrates via templated electrodeposition and extend this technique through the use of a sacrificial overplating layer to achieve improved uniformity. Furthermore, we infiltrate the array with an organic phase change material and demonstrate the preservation of thermal properties. We use the 3ω method to measure the axial thermal conductivity of freestanding copper NW arrays to be as high as 70 W m(-1) K(-1), which is more than an order of magnitude larger than most commercial interface materials and enhanced-conductivity nanocomposites reported in the literature. These arrays are highly anisotropic, and the lateral thermal conductivity is found to be only 1-2 W m(-1) K(-1). We use these measured properties to elucidate the governing array-scale transport mechanisms, which include the effects of morphology and energy carrier scattering from size effects and grain boundaries.

  7. Thermoelectric properties of electrolessly etched silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Sadhu, Jyothi; Tian, Hongxiang; Ma, Jun; Valavala, Krishna; Singh, Piyush; Sinha, Sanjiv

    2013-03-01

    Patterning silicon as nanowires with roughened sidewalls enhances the thermoelectric figure-of-merit ZT by order of magnitude compared to the bulk at 300 K. The enhancement is mainly achieved by the remarkable reduction in the thermal conductivity below 5 W/mK at 300 K with only a negligible effect on the power factor of these nanowires. While the focus remained on understanding the implications of surface disorder on the thermal conductivity, the phonon transport effects on the Seebeck coefficient of these wires remains largely unexplored. We developed an electroless etching technique to generate nanowire arrays (NWAs) with controlled surface roughness, morphology, porosity and doping. We conduct the simultaneous device-level measurements of the Seebeck coefficient and thermal conductivity of the NWAs using frequency domain techniques. We observe that nano-structuring quenches the phonon drag in NWAs thereby reducing the Seebeck coefficient by ~25% compared to the bulk at degenerate doping levels. Further, we observe that the sidewall roughness greater than 3 nm roughness height lowers the thermal conductivity 75% below the Casimir limit with 10% - 15% increase in Seebeck coefficient. The porous NWAs show thermal conductivity close to the amorphous limit of Si with enhancement in the Seebeck coefficient primarily due to the carrier depletion.

  8. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    DOEpatents

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  9. Spectroscopic investigations of arrays containing vertically and horizontally aligned silicon nanowires

    NASA Astrophysics Data System (ADS)

    Volpati, Diogo; Mårtensson, Niklas; Anttu, Nicklas; Viklund, Per; Sundvall, Christian; Åberg, Ingvar; Bäckström, Joakim; Olin, Håkan; Björk, Mikael T.; Castillo-Leon, Jaime

    2016-12-01

    The properties of nanowire arrays have been investigated mainly in comparison with isolated nanowires or thin films, owing to the difficulty in controlling the nanowire alignment. In this study, we report on arrays containing vertically or horizontally aligned silicon nanowires, whose alignment and structure were determined using x-ray diffraction and scanning electron microscopy. The Raman spectra of the nanowire arrays differ from those of isolated nanowires because of distinct heat dissipation rates of the absorbed energy from the laser, in agreement with recent theoretical calculations. The tailored alignment of the nanowires on solid substrates up to 1 inch of diameter also enabled the observation of resonance modes associated with light trapped into the nanowires. This was proven by comparing the light absorbed and scattered by the arrays, and may be exploited to enhance light harvesting in tandem solar cells. Significantly, the control of the assembly of nanowire arrays may have a direct impact on bottom-up technologies of high anisotropy nanomaterials.

  10. Light-controlled resistive switching of ZnWO{sub 4} nanowires array

    SciTech Connect

    Zhao, W. X.; Sun, B.; Liu, Y. H.; Wei, L. J.; Li, H. W.; Chen, P.

    2014-07-15

    ZnWO{sub 4} nanowires array was prepared on the titanium substrate by a facile hydrothermal synthesis, in which the average length of ZnWO{sub 4} nanowires is about 2um and the diameter of individual ZnWO{sub 4} nanowire ranges from 50 to 70 nm. The bipolar resistive switching effect of ZnWO{sub 4} nanowires array was observed. Moreover, the performance of the resistive switching device is greatly improved under white light irradiation compared with that in the dark.

  11. Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Arrays of porous SiC nanowires prepared by a facile in situ carbonizing method. Black-Right-Pointing-Pointer Utilizing the SiC nanowire arrays as photocatalysis for water splitting. Black-Right-Pointing-Pointer Excellent photocatalytic performance under the UV irradiation. Black-Right-Pointing-Pointer Very high stability of the SiC nanowire photocatalyst. -- Abstract: In this study, we report the fabrication and photocatalytic properties of the oriented arrays of SiC nanowires on the Si substrate. The SiC nanowire arrays were prepared by carbonizing the Si nanowire arrays with the graphite powder at 1250 Degree-Sign C. The as-prepared SiC nanowires are highly porous, which endows them with a high surface-to-volume ratio. Considering the large surface areas and the high stability, the porous SiC nanowire arrays were used as photocatalyst for water splitting under UV irradiation. It was found that such porous SiC structure exhibited an enhanced and extremely stable photocatalytic performance.

  12. Coordination number model to quantify packing morphology of aligned nanowire arrays.

    PubMed

    Stein, Itai Y; Wardle, Brian L

    2013-03-21

    The average inter-wire spacing in aligned nanowire systems strongly influences both the physical and transport properties of the bulk material. Because most studies assume that the nanowire coordination is constant, a model that provides an analytical relationship between the average inter-wire spacings and measurable physical properties, such as nanowire volume fraction, is necessary. Here we report a continuous coordination number model with an analytical relationship between the average nanowire coordination, diameter, and volume fraction. The model is applied to vertically aligned carbon nanotube (VACNT) and nanofiber (VACNF) arrays, and the effective nanowire coordination number is established from easily accessible measures, such as the nanowire spacing and diameter. VACNT analysis shows that the coordination number increases with increasing nanowire volume fraction, leading the measured inter-CNT spacing values to deviate by as much as 13% from the spacing values predicted by the typically assumed hexagonal packing. VACNF analysis suggests that, by predicting an inter-fiber spacing that is within 6% of the reported value, the continuous coordination model outperforms both square and hexagonal packing in real nanowire arrays. Using this model, the average inter-wire spacing of nanowire arrays can be predicted, thus allowing more precise morphology descriptions, and thereby supporting the development of more accurate structure-property models of bulk materials comprised of aligned nanowires.

  13. Angle-dependent photodegradation over ZnO nanowire arrays on flexible paper substrates.

    PubMed

    Lu, Ming-Yen; Tseng, Yen-Ti; Chiu, Cheng-Yao

    2014-01-01

    In this study, we grew zinc oxide (ZnO) nanowire arrays on paper substrates using a two-step growth strategy. In the first step, we formed single-crystalline ZnO nanoparticles of uniform size distribution (ca. 4 nm) as seeds for the hydrothermal growth of the ZnO nanowire arrays. After spin-coating of these seeds onto paper, we grew ZnO nanowire arrays conformally on these substrates. The crystal structure of a ZnO nanowire revealed that the nanowires were single-crystalline and had grown along the c axis. Further visualization through annular bright field scanning transmission electron microscopy revealed that the hydrothermally grown ZnO nanowires possessed Zn polarity. From photocatalytic activity measurements of the ZnO nanowire (NW) arrays on paper substrate, we extracted rate constants of 0.415, 0.244, 0.195, and 0.08 s(-1) for the degradation of methylene blue at incident angles of 0°, 30°, 60°, and 75°, respectively; that is, the photocatalytic activity of these ZnO nanowire arrays was related to the cosine of the incident angle of the UV light. Accordingly, these materials have promising applications in the design of sterilization systems and light-harvesting devices.

  14. Salt-induced self-assembly of bacteria on nanowire arrays.

    PubMed

    Sakimoto, Kelsey K; Liu, Chong; Lim, Jongwoo; Yang, Peidong

    2014-09-10

    Studying bacteria-nanostructure interactions is crucial to gaining controllable interfacing of biotic and abiotic components in advanced biotechnologies. For bioelectrochemical systems, tunable cell-electrode architectures offer a path toward improving performance and discovering emergent properties. As such, Sporomusa ovata cells cultured on vertical silicon nanowire arrays formed filamentous cells and aligned parallel to the nanowires when grown in increasing ionic concentrations. Here, we propose a model describing the kinetic and the thermodynamic driving forces of bacteria-nanowire interactions.

  15. Ultralow thermal conductivity of silicon nanowire arrays by molecular dynamics simulation

    NASA Astrophysics Data System (ADS)

    Zhang, Ting; Xiong, Xue; Liu, Meng; Cheng, Guoan; Zheng, Ruiting; Xu, Ju; Wei, Lei

    2017-02-01

    We investigate the thermal conductivities of silicon nanowires (SiNWs) and their arrays based on molecular dynamics simulations. It is found that diminishing diameter, roughing surface and doping impurity of SiNWs can reduce their thermal conductivities by two or three orders of magnitude compared with that of bulk silicon crystals due to the strong phonon boundary and phonon impurity scattering. The simulated thermal conductivities of SiNW arrays demonstrate that arraying nanowires can further lower the thermal conductivity owing to the laterally-coupled effect, and the thermal conductivity of arrays decreases notably with the increased nanowire volume fraction, resulting in an ultralow thermal conductivity for the doped SiNW arrays with rough surfaces, which provides theoretical guidance of thermal management for semiconductor nanowire based microelectronic and thermoelectric devices.

  16. Resonant absorption in semiconductor nanowires and nanowire arrays: Relating leaky waveguide modes to Bloch photonic crystal modes

    SciTech Connect

    Fountaine, Katherine T.; Whitney, William S.; Atwater, Harry A.

    2014-10-21

    We present a unified framework for resonant absorption in periodic arrays of high index semiconductor nanowires that combines a leaky waveguide theory perspective and that of photonic crystals supporting Bloch modes, as array density transitions from sparse to dense. Full dispersion relations are calculated for each mode at varying illumination angles using the eigenvalue equation for leaky waveguide modes of an infinite dielectric cylinder. The dispersion relations along with symmetry arguments explain the selectivity of mode excitation and spectral red-shifting of absorption for illumination parallel to the nanowire axis in comparison to perpendicular illumination. Analysis of photonic crystal band dispersion for varying array density illustrates that the modes responsible for resonant nanowire absorption emerge from the leaky waveguide modes.

  17. Simultaneous electrical and plasmonic monitoring of potential induced ion adsorption on metal nanowire arrays.

    PubMed

    MacKenzie, Robert; Fraschina, Corrado; Dielacher, Bernd; Sannomiya, Takumi; Dahlin, Andreas B; Vörös, Janos

    2013-06-07

    Simultaneous LSPR and electronic sensing of potential induced ion adsorption onto gold nanowire arrays is presented. The formation of a Stern layer upon applying an electrochemical potential generated a complex optical response. Simulation of a lossy atomic layer on the nanowire array using the Multiple Multipole Program (MMP) corresponded very well to the experimentally observed peak position, intensity, and radius of curvature changes. Additionally, a significant voltage-dependent change in the resistance of the gold nanowire array was observed during the controlled formation of the electrical double layer. The results demonstrated that an applied electrochemical potential induces measurable changes in the optical and electrical properties of the gold nanowire surface. This is the first demonstration of combined plasmonic and nanowire resistance-based sensing of a surface process in the literature.

  18. Self-assembled nanowire array capacitors: capacitance and interface state profile

    NASA Astrophysics Data System (ADS)

    Li, Qiliang; Xiong, Hao D.; Liang, Xuelei; Zhu, Xiaoxiao; Gu, Diefeng; Ioannou, Dimitris E.; Baumgart, Helmut; Richter, Curt A.

    2014-04-01

    Direct characterization of the capacitance and interface states is very important for understanding the electronic properties of a nanowire transistor. However, the capacitance of a single nanowire is too small to precisely measure. In this work we have fabricated metal-oxide-semiconductor capacitors based on a large array of self-assembled Si nanowires. The capacitance and conductance of the nanowire array capacitors are directly measured and the interface state profile is determined by using the conductance method. We demonstrate that the nanowire array capacitor is an effective platform for studying the electronic properties of nanoscale interfaces. This approach provides a useful and efficient metrology for the study of the physics and device properties of nanoscale metal-oxide-semiconductor structures.

  19. Self-assembled nanowire array capacitors: capacitance and interface state profile.

    PubMed

    Li, Qiliang; Xiong, Hao D; Liang, Xuelei; Zhu, Xiaoxiao; Gu, Diefeng; Ioannou, Dimitris E; Baumgart, Helmut; Richter, Curt A

    2014-04-04

    Direct characterization of the capacitance and interface states is very important for understanding the electronic properties of a nanowire transistor. However, the capacitance of a single nanowire is too small to precisely measure. In this work we have fabricated metal-oxide-semiconductor capacitors based on a large array of self-assembled Si nanowires. The capacitance and conductance of the nanowire array capacitors are directly measured and the interface state profile is determined by using the conductance method. We demonstrate that the nanowire array capacitor is an effective platform for studying the electronic properties of nanoscale interfaces. This approach provides a useful and efficient metrology for the study of the physics and device properties of nanoscale metal-oxide-semiconductor structures.

  20. Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays

    NASA Astrophysics Data System (ADS)

    Yang, Qianqian; Li, Dingguo; Yu, Binbin; Huang, Shengli; Wang, Jiayuan; Li, Shuping; Kang, Junyong

    2016-03-01

    Branched ZnO/Si nanowire arrays have been synthesized by integration of metal-assisted chemical etching and hydrothermal growth. Experiments for different etching duration and hydrothermal growth time were carried out to investigate their effect on the final morphology of the heterogeneous material as well as its photoluminescence and antireflectance. The results demonstrated that the Si nanowires got longer with extending etching period, on which the branched ZnO nanowires were shorter in length and smaller in diameter in the set time period. The branched ZnO nanowires became longer and gradually filled up the interval among Si nanowires with prolonging hydrothermal growth. The emission spectra indicated that the nanostructure became better with less defects and impurities for the long Si nanowires. The diffuse reflectance spectra of the ZnO/Si nanowires showed an optimal growth period for the reflectivity lower than 4% in the visible region. In this article, possible mechanisms for the nanowire arrays growth and optical properties and their evolution were also discussed, which might provide guidance for the architecture and application of the heterogeneous tree-like nanowire arrays.

  1. Analysis of optical absorption in GaAs nanowire arrays.

    PubMed

    Guo, Haomin; Wen, Long; Li, Xinhua; Zhao, Zhifei; Wang, Yuqi

    2011-12-06

    In this study, the influence of the geometric parameters on the optical absorption of gallium arsenide [GaAs] nanowire arrays [NWAs] has been systematically analyzed using finite-difference time-domain simulations. The calculations reveal that the optical absorption is sensitive to the geometric parameters such as diameter [D], length [L], and filling ratio [D/P], and more efficient light absorption can be obtained in GaAs NWAs than in thin films with the same thickness due to the combined effects of intrinsic antireflection and efficient excitation of resonant modes. Optimized geometric parameters are obtained as follows: D = 180 nm, L = 2 μm, and D/P = 0.5. Meanwhile, the simulation on the absorption of GaAs NWAs for oblique incidence has also been carried out. The underlying physics is discussed in this work.PACS: 81.07.Gf nanowires; 81.05.Ea III-V semiconductors; 88.40.hj efficiency and performance of solar cells; 73.50.Pz photoconduction and photovoltaic effects.

  2. Fabrication and assessment of structure, composition, and electronic properties of nanowire arrays

    NASA Astrophysics Data System (ADS)

    Sander, Melissa

    2001-07-01

    Nanocomposite materials consisting of arrays of parallel, uniform-diameter nanowires within a supporting matrix have a variety of potential applications. The focus of this work is on two nanowire array systems, bismuth and bismuth telluride nanowires in alumina templates. These systems are both promising for thermoelectric applications due to an expected increase in thermoelectric efficiency with reduced dimensionality. Bismuth telluride nanowire arrays were fabricated by electrochemical deposition of Bi2Te3 into porous anodic alumina templates. A process has been developed that allows for the production of high density (˜5 x 109/cm2), high aspect-ratio (>1000), ordered nanowire arrays over large areas (>1mm2), which will enable routine assessment of the array properties as well as potential incorporation into existing device structures. High spatial resolution characterization techniques, including imaging, diffraction, and energy-dispersive spectroscopy in the transmission electron microscope (TEM), have been employed to assess the structure and composition in the arrays. The nanowires are dense, polycrystalline Bi2Te3 with strong texturing along the wire axis. A short (<5 mum) Te-rich composition gradient was identified at the base of the pores. In addition, the composition, structure, and electronic properties of pressure-injected bismuth nanowire arrays have been assessed at high spatial resolution by employing imaging, diffraction, and electron energy loss spectrometry (EELS) in the TEM. The nanowires are polycrystalline with high aspect-ratio grains, and there is evidence of internal localized strain fields. The Bi-Al 2O3 interface in the arrays is compositionally abrupt, with a narrow interphase region dominated by Bi-O bonding. Low-loss EELS studies indicate that the volume plasmon loss peak in individual Bi nanowires shifts to higher energy and broadens as the wire diameter decreases from 90 to 35nm. A low-loss excitation is present in spectra from the

  3. Nanowire Array Gratings with ZnO Combs

    SciTech Connect

    Pan, Zhengwei; Mahurin, Shannon Mark; Dai, Sheng; Lowndes, Douglas H

    2005-01-01

    Diffraction gratings are mainly manufactured by mechanical ruling, interference lithography, or resin replication, which generally require expensive equipment, complicated procedures, and a stable environment. We describe the controlled growth of self-organized microscale ZnO comb gratings by a simple one-step thermal evaporation and condensation method. The ZnO combs consist of an array of very uniform, perfectly aligned, evenly spaced and long single-crystalline ZnO nanowires or nanobelts with periods in the range of 0.2 to 2 {mu}m. Diffraction experiments show that the ZnO combs can function as a tiny three-beam divider that may find applications in miniaturized integrated optics such as three-beam optical pickup systems.

  4. Developing high coercivity in large diameter cobalt nanowire arrays

    NASA Astrophysics Data System (ADS)

    Montazer, A. H.; Ramazani, A.; Almasi Kashi, M.; Zavašnik, J.

    2016-11-01

    Regardless of the synthetic method, developing high magnetic coercivity in ferromagnetic nanowires (NWs) with large diameters has been a challenge over the past two decades. Here, we report on the synthesis of highly coercive cobalt NW arrays with diameters of 65 and 80 nm, which are embedded in porous anodic alumina templates with high-aspect-ratio pores. Using a modified electrochemical deposition method enabled us to reach room temperature coercivity and remanent ratio up to 3000 Oe and 0.70, respectively, for highly crystalline as-synthesized hcp cobalt NW arrays with a length of 8 μm. The first-order reversal curve (FORC) analysis showed the presence of both soft and hard magnetic phases along the length of the resulting NWs. To develop higher coercive fields, the length of the NWs was then gradually reduced in order from bottom to top, thereby reaching NW sections governed by the hard phase. Consequently, this resulted in record high coercivities of 4200 and 3850 Oe at NW diameters of 65 and 80 nm, respectively. In this case, the FORC diagrams confirmed a significant reduction in interactions between the magnetic phases of the remaining sections of NWs. At this stage, x-ray diffraction (XRD) and dark-field transmission electron microscopy analyses indicated the formation of highly crystalline bamboo-like sections along the [0 0 2] direction during a progressive pulse-controlled electrochemical growth of NW arrays under optimized parameters. Our results both provide new insights into the growth process, crystalline characteristics and magnetic phases along the length of large diameter NW arrays and, furthermore, develop the performance of pure 3d transition magnetic NWs.

  5. GaN nanowire arrays by a patterned metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Wang, K. C.; Yuan, G. D.; Wu, R. W.; Lu, H. X.; Liu, Z. Q.; Wei, T. B.; Wang, J. X.; Li, J. M.; Zhang, W. J.

    2016-04-01

    We developed an one-step and two-step metal-assisted chemical etching method to produce self-organized GaN nanowire arrays. In one-step approach, GaN nanowire arrays are synthesized uniformly on GaN thin film surface. However, in a two-step etching processes, GaN nanowires are formed only in metal uncovered regions, and GaN regions with metal-covering show nano-porous sidewalls. We propose that nanowires and porous nanostructures are tuned by sufficient and limited etch rate, respectively. PL spectra shows a red-shift of band edge emission in GaN nanostructures. The formation mechanism of nanowires was illustrated by two separated electrochemical reactions occur simultaneously. The function of metals and UV light was illustrated by the scheme of potential relationship between energy bands in Si, GaN and standard hydrogen electrode potential of solution and metals.

  6. Terahertz detectors arrays based on orderly aligned InN nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-08-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

  7. Highly ordered vertical GaAs nanowire arrays with dry etching and their optical properties.

    PubMed

    Dhindsa, Navneet; Chia, Andrew; Boulanger, Jonathan; Khodadad, Iman; LaPierre, Ray; Saini, Simarjeet S

    2014-08-01

    We report fabrication methods, including metal masks and dry etching, and demonstrate highly ordered vertical gallium arsenide nanowire arrays. The etching process created high aspect ratio, vertical nanowires with insignificant undercutting from the mask, allowing us to vary the diameter from 30 nm to 400 nm with a pitch from 250 nm to 1100 nm and length up to 2.2 μm. A diameter to pitch ratio of ∼68% was achieved. We also measured the reflectance from the nanowire arrays and show experimentally diameter-dependent strong absorption peaks resulting from resonant optical mode excitations within these nanowires. The reflectance curves match very well with simulations. The work done here paves the way towards achieving high efficiency solar cells and tunable photodetectors using III-V nanowires.

  8. A High-Efficiency Si Nanowire Array/Perovskite Hybrid Solar Cell.

    PubMed

    Yan, Xin; Zhang, Chen; Wang, Jiamin; Zhang, Xia; Ren, Xiaomin

    2017-12-01

    A low-cost Si nanowire array/perovskite hybrid solar cell is proposed and simulated. The solar cell consists of a Si p-i-n nanowire array filled with CH3NH3PbI3, in which both the nanowires and perovskite absorb the incident light while the nanowires act as the channels for transporting photo-generated electrons and holes. The hybrid structure has a high absorption efficiency in a broad wavelength range of 300~800 nm. A large short-circuit current density of 28.8 mA/cm(2) and remarkable conversion efficiency of 13.3% are obtained at a thin absorber thickness of 1.6 μm, which are comparable to the best results of III-V nanowire solar cells.

  9. Terahertz detectors arrays based on orderly aligned InN nanowires

    PubMed Central

    Chen, Xuechen; Liu, Huiqiang; Li, Qiuguo; Chen, Hao; Peng, Rufang; Chu, Sheng; Cheng, Binbin

    2015-01-01

    Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series. PMID:26289498

  10. A High-Efficiency Si Nanowire Array/Perovskite Hybrid Solar Cell

    NASA Astrophysics Data System (ADS)

    Yan, Xin; Zhang, Chen; Wang, Jiamin; Zhang, Xia; Ren, Xiaomin

    2017-01-01

    A low-cost Si nanowire array/perovskite hybrid solar cell is proposed and simulated. The solar cell consists of a Si p-i-n nanowire array filled with CH3NH3PbI3, in which both the nanowires and perovskite absorb the incident light while the nanowires act as the channels for transporting photo-generated electrons and holes. The hybrid structure has a high absorption efficiency in a broad wavelength range of 300 800 nm. A large short-circuit current density of 28.8 mA/cm2 and remarkable conversion efficiency of 13.3% are obtained at a thin absorber thickness of 1.6 μm, which are comparable to the best results of III-V nanowire solar cells.

  11. Strong broadband absorption in GaAs nanocone and nanowire arrays for solar cells.

    PubMed

    Wang, Baomin; Stevens, Erica; Leu, Paul W

    2014-03-10

    We studied the influence of geometric parameters on the optical absorption of gallium arsenide (GaAs) nanocone and nanowire arrays via finite difference time domain simulations. We optimized the structural parameters of the nanocone and nanowire arrays to maximize the ultimate efficiency across a range of lengths from 100 to 1000 nm. Nanocone arrays were found to have improved solar absorption, short-circuit current density, and ultimate efficiencies over nanowire arrays for a wide range of lengths. Detailed simulations reveal that nanocones have superior absorption due to reduced reflection from their smaller tip and reduced transmission from their larger base. Breaking the vertical mirror symmetry of nanowires results in a broader absorption spectrum such that overall efficiencies are enhanced for nanocones. We also evaluated the electric field intensity, carrier generation and angle-dependent optical properties of nanocones and nanowires. The carrier generation in nanocone arrays occurs away from the surface and is more uniform over the entire structure, which should result in less recombination losses than in nanowire arrays.

  12. Formation of linear InAs quantum dot arrays on InGaAsP /InP (100) by self-organized anisotropic strain engineering and their optical properties

    NASA Astrophysics Data System (ADS)

    Sritirawisarn, N.; van Otten, F. W. M.; Eijkemans, T. J.; Nötzel, R.

    2007-09-01

    The formation of linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering of an InGaAsP /InP (100) superlattice (SL) template in chemical beam epitaxy is demonstrated, and the optimized growth window is determined. InAs QD formation, thin InGaAsP capping, annealing, InGaAsP overgrowth, and stacking in SL template formation produce wirelike InAs structures along [001] due to anisotropic surface migration and lateral and vertical strain correlations. InAs QD ordering is governed by the corresponding lateral strain field modulation on the SL template surface. Careful optimization of InGaAsP cap layer thickness, annealing temperature, InAs amount and growth rate, and number of SL periods results in straight and well-separated InAs QD arrays. The InAs QD arrays exhibit excellent photoluminescence (PL) emission up to room temperature which is tuned into the 1.55μm telecommunications wavelength region through the insertion of ultrathin GaAs interlayers. Temperature dependent PL measurements and the linear polarization behavior indicate lateral electronic coupling of the QDs in the arrays.

  13. A force sensor using nanowire arrays to understand biofilm formation (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Sahoo, Prasana K.; Cavalli, Alessandro; Pelegati, Vitor B.; Murillo, Duber M.; Souza, Alessandra A.; Cesar, Carlos L.; Bakkers, Erik P. A. M.; Cotta, Monica A.

    2016-03-01

    Understanding the cellular signaling and function at the nano-bio interface can pave the way towards developing next-generation smart diagnostic tools. From this perspective, limited reports detail so far the cellular and subcellular forces exerted by bacterial cells during the interaction with abiotic materials. Nanowire arrays with high aspect ratio have been used to detect such small forces. In this regard, live force measurements were performed ex-vivo during the interaction of Xylella fastidiosa bacterial cells with InP nanowire arrays. The influence of nanowire array topography and surface chemistry on the response and motion of bacterial cells was studied in detail. The nanowire arrays were also functionalized with different cell adhesive promoters, such as amines and XadA1, an afimbrial protein of X.fastidiosa. By employing the well-defined InP nanowire arrays platform, and single cell confocal imaging system, we were able to trace the bacterial growth pattern, and show that their initial attachment locations are strongly influenced by the surface chemistry and nanoscale surface topography. In addition, we measure the cellular forces down to few nanonewton range using these nanowire arrays. In case of nanowire functionalized with XadA1, the force exerted by vertically and horizontally attached single bacteria on the nanowire is in average 14% and 26% higher than for the pristine array, respectively. These results provide an excellent basis for live-cell force measurements as well as unravel the range of forces involved during the early stages of bacterial adhesion and biofilm formation.

  14. Light-trapping properties of the Si inclined nanowire arrays

    NASA Astrophysics Data System (ADS)

    Xu, Zhaopeng; Huangfu, Huichao; He, Long; Wang, Jiazhuang; Yang, Dong; Guo, Jingwei; Wang, Haiyan

    2017-01-01

    The light trapping performance of Si nanowire with different inclination angles were systematically studied by COMSOL Multiphysics. The inclined nanowires with inclination angles smaller than 60° show greater light trapping ability than their counterparts of the vertical nanowires. The Si solar cell with the inclined nanowires of the optimal parameters, whose θ=30°, P=400 nm, D=140 nm, can achieve a 32.395 mA/cm2 short circuit photocurrent density and a 35.655% conversion efficiency. The study of the inclined nanowire provides an effective way for further utilization of the incoming light.

  15. Sensors and devices containing ultra-small nanowire arrays

    DOEpatents

    Xiao, Zhili

    2014-09-23

    A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.

  16. Sensors and devices containing ultra-small nanowire arrays

    DOEpatents

    Xiao, Zhili

    2017-04-11

    A network of nanowires may be used for a sensor. The nanowires are metallic, each nanowire has a thickness of at most 20 nm, and each nanowire has a width of at most 20 nm. The sensor may include nanowires comprising Pd, and the sensor may sense a change in hydrogen concentration from 0 to 100%. A device may include the hydrogen sensor, such as a vehicle, a fuel cell, a hydrogen storage tank, a facility for manufacturing steel, or a facility for refining petroleum products.

  17. Synthesize of barium ferrite nanowire array by self-fabricated porous silicon template

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Han, Mangui; Deng, Jiangxia; Zheng, Liang; Wu, Jun; Deng, Longjiang; Qin, Huibin

    2014-08-01

    In this work, we synthesize barium ferrite (BaFe12O19) nanowire array in porous silicon template. The porous silicon templates are prepared via gold-assisted chemical etching method. The gold (Au) nanoparticles with mean diameter of 30 nm and distance of 100 nm were ordered on the surface of Si substrate through the Polystyrene (510000)-block-poly (2-vinylpyridine) (31000) (PS510000-b-P2VP31000) diblock copolymer. Porous silicon templates with mean diameter of 500 nm and distance between the pores of 500 nm were fabricated by two etching steps. BaFe12O19 nanowires with mean diameter of 200 nm were synthesized into a porous silicon template by a sol-gel method. Magnetic hysteresis loops show an isotropic feature of the BaFe12O19 nanowires array. The coercivity (Hc) and squareness ratio (Mr/Ms) of nanowire arrays are 2560 Oe and 0.6, respectively.

  18. Enhancing four-wave-mixing processes by nanowire arrays coupled to a gold film.

    PubMed

    Poutrina, Ekaterina; Ciracì, Cristian; Gauthier, Daniel J; Smith, David R

    2012-05-07

    We consider the process of four-wave mixing in an array of gold nanowires strongly coupled to a gold film. Using full-wave simulations, we perform a quantitative comparison of the four-wave mixing efficiency associated with a bare film and films with nanowire arrays. We find that the strongly localized surface plasmon resonances of the coupled nanowires provide an additional local field enhancement that, along with the delocalized surface plasmon of the film, produces an overall four-wave mixing efficiency enhancement of up to six orders of magnitude over that of the bare film. The enhancement occurs over a wide range of excitation angles. The film-coupled nanowire array is easily amenable to nanofabrication, and could find application as an ultra-compact component for integrated photonic and quantum optic systems.

  19. Controlled Segmentation of Metal Nanowire Array by Block Copolymer Lithography and Reversible Ion Loading.

    PubMed

    Mun, Jeong Ho; Cha, Seung Keun; Kim, Ye Chan; Yun, Taeyeong; Choi, Young Joo; Jin, Hyeong Min; Lee, Jae Eun; Jeon, Hyun Uk; Kim, So Youn; Kim, Sang Ouk

    2017-02-20

    Spatial arrangement of 1D nanomaterials may offer enormous opportunities for advanced electronics and photonics. Moreover, morphological complexity and chemical diversity in the nanoscale components may lead to unique properties that are hardly anticipated in randomly distributed homogeneous nanostructures. Here, controlled chemical segmentation of metal nanowire arrays using block copolymer lithography and subsequent reversible metal ion loading are demonstrated. To impose chemical heterogeneity in the nanowires generated by block copolymer lithography, reversible ion loading method highly specific for one particular polymer block is introduced. Reversibility of the metal ion loading enables area-selective localized replacement of metal ions in the self-assembled patterns and creates segmented metal nanowire arrays with different metallic components. Further integration of this method with shear aligning process produces high aligned segmented metal nanowire array with desired local chemical compositions.

  20. Directed growth of horizontally aligned gallium nitride nanowires for nanoelectromechanical resonator arrays.

    PubMed

    Henry, Tania; Kim, Kyungkon; Ren, Zaiyuan; Yerino, Christopher; Han, Jung; Tang, Hong X

    2007-11-01

    We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs) as resonant components in nanoelectromechanical systems (NEMS). A combination of top-down selective area growth (SAG) and bottom-up vapor-liquid-solid (VLS) synthesis enables flexible fabrication of highly ordered nanowire arrays in situ with no postgrowth dispersion. Mechanical resonance of free-standing nanowires are measured, with quality factors (Q) ranging from 400 to 1000. We obtained a Young's modulus (E) of approximately 338 GPa from an array of NWs with varying diameters and lengths. The measurement allows detection of nanowire motion with a rotating frame and reveals dual fundamental resonant modes in two orthogonal planes. A universal ratio between the resonant frequencies of these two fundamental modes, irrespective of their dimensions, is observed and attributed to an isosceles cross section of GaN NWs.

  1. Ultra-sensitive detection of adipocytokines with CMOS-compatible silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Pui, Tze-Sian; Agarwal, Ajay; Ye, Feng; Tou, Zhi-Qiang; Huang, Yinxi; Chen, Peng

    2009-09-01

    Perfectly aligned arrays of single-crystalline silicon nanowires were fabricated using top-down CMOS-compatible techniques. We demonstrate that these nanowire devices are able to detect adipocytokines secreted by adipose cells with femtomolar sensitivity, high specificity, wide detection range, and ability for parallel monitoring. The nanowire sensors also provide a novel tool to reveal the poorly understood signaling mechanisms of these newly recognized signaling molecules, as well as their relevance in common diseases such as obesity and diabetes.Perfectly aligned arrays of single-crystalline silicon nanowires were fabricated using top-down CMOS-compatible techniques. We demonstrate that these nanowire devices are able to detect adipocytokines secreted by adipose cells with femtomolar sensitivity, high specificity, wide detection range, and ability for parallel monitoring. The nanowire sensors also provide a novel tool to reveal the poorly understood signaling mechanisms of these newly recognized signaling molecules, as well as their relevance in common diseases such as obesity and diabetes. Electronic supplementary information (ESI) available: Process diagram of nanowire fabrication; specificity of nanowire detection; induced differentiation of 3T3-L1 cells. See DOI: 10.1039/b9nr00092e

  2. Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: a demonstration of epitaxial growth strategy.

    PubMed

    Utama, Muhammad Iqbal Bakti; Peng, Zeping; Chen, Rui; Peng, Bo; Xu, Xinlong; Dong, Yajie; Wong, Lai Mun; Wang, Shijie; Sun, Handong; Xiong, Qihua

    2011-08-10

    We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (∼1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.

  3. Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.

    PubMed

    Schramm, A; Tommila, J; Strelow, C; Hakkarainen, T V; Tukiainen, A; Dumitrescu, M; Mews, A; Kipp, T; Guina, M

    2012-05-04

    We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 µm was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 µeV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays.

  4. Electrodeposition of bismuth:tellurium nanowire arrays into porous alumina templates for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Trahey, Lynn

    Bismuth telluride is a well-known thermoelectric material for refrigeration applications. Thermoelectrics possess several advantages over conventional refrigeration and power generation devices, yet are not widely-used due to low efficiencies. It has been predicted and shown experimentally that the efficiency of thermoelectric devices increases when the semiconducting materials have reduced dimensions. Therefore, the aim of this research was to show enhanced thermoelectric efficiency in one-dimensional nanowires. The nanowires were synthesized via electrochemical deposition into porous alumina templates. Electrodeposition is a versatile technique that ensures electrical continuity in the deposited material. The nanowire templates, porous alumina, were made by the double anodization of high-purity aluminum foil in oxalic acid solutions. This technique produces parallel, hexagonally packed, and nanometer-range diameter pores that can reach high aspect ratios (greater than 2000:1). The main anodization variables (electrolyte concentration, applied potential, 2nd anodization time, and temperature) were studied systematically in order to deconvolute their effects on the resulting pores and to obtain high aspect ratio pores. The porous alumina is of great importance because the pore dimensions determine the dimensions of the electrodeposited nanowires, which influence the thermoelectric performance of the nanowire arrays. Nanowire arrays were characterized in several ways. Powder X-ray diffraction was used to assess crystallinity and preferred orientation of the nanowires, revealing that the nanowires are highly crystalline and grow with strong preferred orientation such that the material is suited for optimal thermoelectric performance. Scanning electron microscopy was used to evaluate the nanowire nucleation percentage and growth-front uniformity, both of which were enhanced by pulsed-potential electrodeposition. Compositional analysis via electron microprobe indicates

  5. E{sub 1} Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    SciTech Connect

    Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-12-23

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm{sup -1} reveals an E{sub 1} gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  6. Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure

    PubMed Central

    2014-01-01

    A rational approach for creating branched ZnO/Si nanowire arrays with hierarchical structure was developed based on a combination of three simple and cost-effective synthesis pathways. The crucial procedure included growth of crystalline Si nanowire arrays as backbones by chemical etching of Si substrates, deposition of ZnO thin film as a seed layer by magnetron sputtering, and fabrication of ZnO nanowire arrays as branches by hydrothermal growth. The successful synthesis of ZnO/Si heterogeneous nanostructures was confirmed by morphologic, structural, and optical characterizations. The roles of key experimental parameters, such as the etchant solution, the substrate direction, and the seed layer on the hierarchical nanostructure formation, were systematically investigated. It was demonstrated that an etchant solution with an appropriate redox potential of the oxidant was crucial for a moderate etching speed to achieve a well-aligned Si nanowire array with solid and round surface. Meanwhile, the presence of gravity gradient was a key issue for the growth of branched ZnO nanowire arrays. The substrate should be placed vertically or facedown in contrast to the solution surface during the hydrothermal growth. Otherwise, only the condensation of the ZnO nanoparticles took place in a form of film on the substrate surface. The seed layer played another important role in the growth of ZnO nanowire arrays, as it provided nucleation sites and determined the growing direction and density of the nanowire arrays for reducing the thermodynamic barrier. The results of this study might provide insight on the synthesis of hierarchical three-dimensional nanostructure materials and offer an approach for the development of complex devices and advanced applications. PMID:25024688

  7. Exploring highly porous Co2P nanowire arrays for electrochemical energy storage

    NASA Astrophysics Data System (ADS)

    Chen, Minghua; Zhou, Weiwei; Qi, Meili; Yin, Jinghua; Xia, Xinhui; Chen, Qingguo

    2017-02-01

    Controllable synthesis of mesoporous conductive metal phosphide nanowire arrays is critical for developing highly-active electrodes of alkaline batteries. Herein we develop a simple combined strategy for rational synthesis of mesoporous Co2P nanowire arrays by hydrothermal-phosphorization method. Free-standing mesoporous Co2P nanowires consisting of interconnected nanoparticles of 10-20 nm grow vertically to the substrate forming arrays. High electrical conductivity and large porosity are obtained in the arrays architecture. When characterized as the cathode of high-rate alkaline batteries, the designed Co2P nanowire arrays are proven with good electrochemical performance with a large capacity (133 mAh g-1 at 1 A g-1), stable cycling life with a capacity retention of almost 100% after 5000 cycles at 10 A g-1 owing to the mesoporous nanowire structure with short ion/electron transport path. Our synthetic approach can be useful for construction of other porous metal phosphide arrays for energy storage and conversion.

  8. Potassium Chloride Nanowire Formation Inside a Microchannel Glass Array

    SciTech Connect

    Zhang, Daqing; Moore, Sam; Wei, Jiang; Alkhateeb, Abudullah I.; Gangadean, Dev; Mahmood, Hasan; Lantrips, Justin; McIlroy, David N.; LaLonde, Aaron D.; Norton, M G.; Young, James S.; Wang, Chong M.

    2005-06-27

    The synthesis of KCl nanowires has been achieved by atomic layer deposition inside high aspect ratio channels of microchannel glass. The average diameter of the KCl nanowires is 250 nm, with a minimum observed diameter of 50 nm, and lengths up to 5 {micro}m. The Cl precursor was TaCl5, while the source of K was determined to be impurities in the microchannel glass substrate. The process for KCl nanowire formation is a three-step chemical process that simultaneously etches K from the substrate concomitant with the formation of chlorine gas. It is postulated that the curvature of the channels may influence the diameters of the KCl nanowires.

  9. Fabrication of sub-10 nm metal nanowire arrays with sub-1 nm critical dimension control

    NASA Astrophysics Data System (ADS)

    Pi, Shuang; Lin, Peng; Xia, Qiangfei

    2016-11-01

    Sub-10 nm metal nanowire arrays are important electrodes for building high density emerging ‘beyond CMOS’ devices. We made Pt nanowire arrays with sub-10 nm feature size using nanoimprint lithography on silicon substrates with 100 nm thick thermal oxide. We further studied the critical dimension (CD) evolution in the fabrication procedure and achieved 0.4 nm CD control, providing a viable solution to the imprint lithography CD challenge as specified by the international technology roadmap for semiconductors. Finally, we fabricated Pt/TiO2/Pt memristor crossbar arrays with the 8 nm electrodes, demonstrating great potential in dimension scaling of this emerging device.

  10. A near-infrared 64-pixel superconducting nanowire single photon detector array with integrated multiplexed readout

    SciTech Connect

    Allman, M. S. Verma, V. B.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Mirin, R.; Nam, S. W.; Marsili, F.; Beyer, A.; Shaw, M. D.; Kumor, D.

    2015-05-11

    We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

  11. Comparison of ordered and disordered silicon nanowire arrays: experimental evidence of photonic crystal modes.

    PubMed

    Dhindsa, Navneet; Saini, Simarjeet S

    2016-05-01

    We experimentally compared the reflectance between ordered and disordered silicon nanowires to observe the evidence of photonic crystal modes. For similar diameters, the resonance peaks for the ordered nanowires at a spacing of 400 nm was at a shorter wavelength than the disordered nanowires, consistent to the excitation of photonic crystal modes. Furthermore, the resonant wavelength didn't shift while changing the density of the disordered nanowires, whereas there was a significant shift observed in the ordered ones. At an ordered spacing of 800 nm, the resonance wavelength approached that of the disordered structures, indicating that the ordered structures were starting to behave like individual waveguides. To our knowledge, this is the first direct experimental observation of photonic crystal modes in vertical periodic silicon nanowire arrays.

  12. Synthesis of Fe Doped ZnO Nanowire Arrays that Detect Formaldehyde Gas.

    PubMed

    Jeon, Yoo Sang; Seo, Hyo Won; Kim, Su Hyo; Kim, Young Keun

    2016-05-01

    Owing to their chemical and thermal stability and doping effects on providing electrons to the conduction band, doped ZnO nanowires have generated interest for use in electronic devices. Here we report hydrothermally grown Fe-doped ZnO nanowires and their gas-sensing properties. The synthesized nanowires have a high crystallinity and are 60 nm in diameter and 1.7 μm in length. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are employed to understand the doping effects on the microstructures and gas sensing properties. When the Fe-doped ZnO nanowire arrays were evaluated for gas sensing, responses were recorded through changes in temperature and gas concentration. Gas sensors consisting of ZnO nanowires doped with 3-5 at.% Fe showed optimum formaldehyde (HCHO) sensing performance at each working temperature.

  13. Si/PEDOT hybrid core/shell nanowire arrays as photoelectrodes for photoelectrochemical water-splitting.

    PubMed

    Li, Xiaojuan; Lu, Wenhui; Dong, Weiling; Chen, Qi; Wu, Dan; Zhou, Wenzheng; Chen, Liwei

    2013-06-21

    Si/poly(3,4-ethylenedioxythiophene) (PEDOT) core/shell nanowire arrays have been prepared by chemical etching of Si nanowires followed by vapor-phase polymerization of PEDOT as hybrid photoanodes for photoelectrochemical water-splitting. The PEDOT layer is employed as a multi-functional coating to prevent photocorrosion of Si nanowires, collect photogenerated holes and catalyze the water oxidation reaction. The amino silane modified Si nanowire surface improves PEDOT layer adhesion, and the resulting photoanode exhibits better photoresponse and improved stability. By tuning the length of the nanowires, we identify that the competition between the carrier recombination and catalytic water oxidation reaction is the primary factor determining the photoelectrocatalytic activity of the hybrid photoanode.

  14. Highly aligned arrays of high aspect ratio barium titanate nanowires via hydrothermal synthesis

    SciTech Connect

    Bowland, Christopher C.; Zhou, Zhi; Malakooti, Mohammad H.; Sodano, Henry A.

    2015-06-01

    We report on the development of a hydrothermal synthesis procedure that results in the growth of highly aligned arrays of high aspect ratio barium titanate nanowires. Using a multiple step, scalable hydrothermal reaction, a textured titanium dioxide film is deposited on titanium foil upon which highly aligned nanowires are grown via homoepitaxy and converted to barium titanate. Scanning electron microscope images clearly illustrate the effect the textured film has on the degree of orientation of the nanowires. The alignment of nanowires is quantified by calculating the Herman's Orientation Factor, which reveals a 58% improvement in orientation as compared to growth in the absence of the textured film. The ferroelectric properties of barium titanate combined with the development of this scalable growth procedure provide a powerful route towards increasing the efficiency and performance of nanowire-based devices in future real-world applications such as sensing and power harvesting.

  15. Wafer-scale fabrication of silicon nanowire arrays with controllable dimensions

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Li, Dan; Tian, Miao; Lee, Yung-Cheng; Yang, Ronggui

    2012-09-01

    A novel and facile method was successfully developed to fabricate wafer-scale Si nanowire arrays with well-controlled sizes through the in-situ porous anodic alumina (PAA) template-assisted wet-etching process. The diameter and filling ratio (inter-wire spacing) of the as-prepared Si nanowires are determined by the size and density of pores in the in-situ PAA templates, which can be tailored independently by adjusting the anodization voltages and the immersion time of PAA templates in phosphoric acid. The length of Si nanowires can be more than one hundred micrometers long, which is controlled by adjusting the wet-etching time. Moreover, this method is compatible with complex Si surface topology for creating desirable 3-dimensional hybrid micro/nano-structures. Such Si nanowire arrays exhibit ultralow reflectance and interesting wettability that are of great importance to photovoltaics and thermal management applications.

  16. Patterned polymer nanowire arrays as an effective protein immobilizer for biosensing and HIV detection

    NASA Astrophysics Data System (ADS)

    Shen, Yue; Liu, Yingyi; Zhu, Guang; Fang, Hao; Huang, Yunhui; Jiang, Xingyu; Wang, Zhong L.

    2012-12-01

    We report an array of polymeric nanowires for effectively immobilizing biomolecules on biochips owing to the large surface area. The nanowires were fabricated in predesigned patterns using an inductively coupled plasma (ICP) etching process. Microfluidic biochips integrated using the substrates with arrays of nanowires and polydimethylsiloxane channels have been demonstrated to be effective for detecting antigens, and a detection limit of antigens at 0.2 μg mL-1 has been achieved, which is improved by a factor of 50 compared to that based on flat substrates without the nanowires. In addition, the high sensitivity for clinical detection of human immunodeficiency virus (HIV) antibody has also been demonstrated, showing a 20 times enhancement in fluorescent signal intensity between the samples with positive and negative HIV.

  17. Synthesis and Characterization of fe Nanowire Arrays by AC Electrodeposition in PAMs

    NASA Astrophysics Data System (ADS)

    Wang, Xuehua; Li, Chengyong; Chen, Gui; Peng, Cai; He, Lei; Yang, Liang

    Fe nanowire arrays were fabricated at lower voltage by alternating current (AC) electrodeposition into the highly ordered nanoholes of the porous alumina membrane (PAM) obtained by two-step anodization in oxalic acid. The morphology, structure and magnetic properties of Fe nanowire arrays were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and vibrating sample magnetometer (VSM), respectively. The results indicate that Fe nanowires are about 50 nm in diameter which were accorded with the pores of the PAM, and stabilized in body-centered cubic (bcc) structure with a preferred orientation along (110). The easy magnetization axis is parallel to the axis of the Fe nanowires, while corresponding coercivity and squareness ratio value is 1674.5 Oe and 0.87, respectively.

  18. Scalable, epitaxy-free fabrication of super-absorbing sparse III-V nanowire arrays for photovoltaic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Cheng, Wen-Hui; Fountaine, Katherine T.; Bukowsky, Colton R.; Atwater, Harry A.

    2016-09-01

    III-V compound semiconductor nanowire arrays are promising candidates for photovoltaics applications due to their high volumetric absorption. Uniform nanowire arrays exhibit high absorption at certain wavelengths due to strong coupling into lossy waveguide modes. Previously, simulations predicted near-unity, broadband absorption in sparse semiconductor nanowire arrays (<5% fill fraction) with multi-radii and tapered nanowire array designs [1]. Herein, we experimentally demonstrate near-unity broadband absorption in InP nanowire arrays via a scalable, epitaxy-free fabrication method, using nanoimprint lithography and ICP-RIE to define nanowire arrays in bulk InP wafers. In addition to mask pattern design (wire radius and spacing) and etch chemistry (wire taper), appropriate selection of a hard mask for the InP etch is critical to precise dimension control and reproducibility. Polymer-embedded wires are removed from the bulk InP substrate by a mechanical method that facilitates extensive reuse of a single bulk InP wafer to synthesize many polymer-embedded nanowire array thin films. Arrays containing multiple nanowire radii and tapered nanowires were successfully fabricated. For both designs, the polymer-embedded arrays achieved 90% broadband absorption (λ=400-900 nm) in less than 100 nm planar equivalence of InP. The addition of a silver back reflector increased this broadband absorption to 95%. The repeatable process of imprinting, etching and peeling to obtain many nanowire arrays from one single wafer represents an economical manufacturing route for high efficiency III-V photovoltaics. [1] K.T. Fountaine, C.G. Kendall, Harry A. Atwater, "Near-unity broadband absorption designs for semiconducting nanowire arrays via localized radial mode excitation," Opt. Exp. (2014).

  19. Si/PEDOT hybrid core/shell nanowire arrays as photoelectrodes for photoelectrochemical water-splitting

    NASA Astrophysics Data System (ADS)

    Li, Xiaojuan; Lu, Wenhui; Dong, Weiling; Chen, Qi; Wu, Dan; Zhou, Wenzheng; Chen, Liwei

    2013-05-01

    Si/poly(3,4-ethylenedioxythiophene) (PEDOT) core/shell nanowire arrays have been prepared by chemical etching of Si nanowires followed by vapor-phase polymerization of PEDOT as hybrid photoanodes for photoelectrochemical water-splitting. The PEDOT layer is employed as a multi-functional coating to prevent photocorrosion of Si nanowires, collect photogenerated holes and catalyze the water oxidation reaction. The amino silane modified Si nanowire surface improves PEDOT layer adhesion, and the resulting photoanode exhibits better photoresponse and improved stability. By tuning the length of the nanowires, we identify that the competition between the carrier recombination and catalytic water oxidation reaction is the primary factor determining the photoelectrocatalytic activity of the hybrid photoanode.Si/poly(3,4-ethylenedioxythiophene) (PEDOT) core/shell nanowire arrays have been prepared by chemical etching of Si nanowires followed by vapor-phase polymerization of PEDOT as hybrid photoanodes for photoelectrochemical water-splitting. The PEDOT layer is employed as a multi-functional coating to prevent photocorrosion of Si nanowires, collect photogenerated holes and catalyze the water oxidation reaction. The amino silane modified Si nanowire surface improves PEDOT layer adhesion, and the resulting photoanode exhibits better photoresponse and improved stability. By tuning the length of the nanowires, we identify that the competition between the carrier recombination and catalytic water oxidation reaction is the primary factor determining the photoelectrocatalytic activity of the hybrid photoanode. Electronic supplementary information (ESI) available: The schematic setup of photoelectrochemical performance tests, and the SEM images of different photoanodes before and after photoelectrochemical tests. See DOI: 10.1039/c3nr00867c

  20. Fabrication of vertically aligned Pd nanowire array in AAO template by electrodeposition using neutral electrolyte

    PubMed Central

    2010-01-01

    A vertically aligned Pd nanowire array was successfully fabricated on an Au/Ti substrate using an anodic aluminum oxide (AAO) template by a direct voltage electrodeposition method at room temperature using diluted neutral electrolyte. The fabrication of Pd nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The AAO template and the Pd nanowires were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) methods and X-Ray diffraction (XRD). It was observed that the Pd nanowire array was standing freely on an Au-coated Ti substrate after removing the AAO template in a relatively large area of about 5 cm2, approximately 50 nm in diameter and 2.5 μm in length with a high aspect ratio. The nucleation rate and the number of atoms in the critical nucleus were determined from the analysis of current transients. Pd nuclei density was calculated as 3.55 × 108 cm−2. Usage of diluted neutral electrolyte enables slower growing of Pd nanowires owing to increase in the electrodeposition potential and thus obtained Pd nanowires have higher crystallinity with lower dislocations. In fact, this high crystallinity of Pd nanowires provides them positive effect for sensor performances especially. PMID:20596417

  1. Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

    PubMed

    Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

    2014-11-17

    The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.

  2. Tuning the crystallinity of thermoelectric Bi2Te3 nanowire arrays grown by pulsed electrodeposition

    NASA Astrophysics Data System (ADS)

    Lee, Jongmin; Farhangfar, Shadyar; Lee, Jaeyoung; Cagnon, Laurent; Scholz, Roland; Gösele, Ulrich; Nielsch, Kornelius

    2008-09-01

    Arrays of thermoelectric bismuth telluride (Bi2Te3) nanowires were grown into porous anodic alumina (PAA) membranes prepared by a two-step anodization. Bi2Te3 nanowire arrays were deposited by galvanostatic, potentiostatic and pulsed electrodeposition from aqueous solution at room temperature. Depending on the electrodeposition method and as a consequence of different growth mechanisms, Bi2Te3 nanowires exhibit different types of crystalline microstructure. Bi2Te3 nanowire arrays, especially those grown by pulsed electrodeposition, have a highly oriented crystalline structure and were grown uniformly as compared to those grown by other electrodeposition techniques used. X-ray diffraction (XRD) analyses are indicative of the existence of a preferred growth orientation. High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirm the formation of a preferred orientation and highly crystalline structure of the grown nanowires. The nanowires were further analyzed by scanning electron microscopy (SEM). Energy dispersive x-ray spectrometry (EDX) indicates that the composition of Bi-Te nanowires can be controlled by the electrodeposition method and the relaxation time in the pulsed electrodeposition approach. The samples fabricated by pulsed electrodeposition were electrically characterized within the temperature range 240 K<=T<=470 K. Below T≈440 K, the nanowire arrays exhibited a semiconducting behavior. Depending on the relaxation time in the pulsed electrodeposition, the semiconductor energy gaps were estimated to be 210-290 meV. At higher temperatures, as a consequence of the enhanced carrier-phonon scattering, the measured electrical resistances increased slightly. The Seebeck coefficient was measured for every Bi2Te3 sample at room temperature by a very simple method. All samples showed a positive value (12-33 µV K-1), indicating a p-type semiconductor behavior.

  3. Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

    DTIC Science & Technology

    2008-11-01

    been obtained by growth of ZnO ,10-13 Ga2O3, 14 SnO2 , 15 and GaAs16 nanorod branches symmetrically around the nanowire (NW) cores composed of materials...Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO -Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3

  4. Interfacing Inorganic Nanowire Arrays and Living Cells for Cellular Function Analysis.

    PubMed

    Kwak, Minsuk; Han, Lin; Chen, Jonathan J; Fan, Rong

    2015-11-11

    Inorganic nanowires are among the most attractive functional materials, which have emerged in the past two decades. They have demonstrated applications in information technology and energy conversion, but their utility in biological or biomedical research remains relatively under-explored. Although nanowire-based sensors have been frequently reported for biomolecular detection, interfacing nanowire arrays and living mammalian cells for the direct analysis of cellular functions is a very recent endeavor. Cell-penetrating nanowires enabled effective delivery of biomolecules, electrical and optical stimulation and recording of intracellular signals over a long period of time. Non-penetrating, high-density nanowire arrays display rich interactions between the nanostructured substrate and the micro/nanoscale features of cell surfaces. Such interactions enable efficient capture of rare cells including circulating tumor cells and trafficking leukocytes from complex biospecimens. It also serves as a platform for probing cell traction force and neuronal guidance. The most recent advances in the field that exploits nanowire arrays (both penetrating and non-penetrating) to perform rapid analysis of cellular functions potentially for disease diagnosis and monitoring are reviewed.

  5. Simulation Analysis on Photoelectric Conversion Characteristics of Silicon Nanowire Array Photoelectrodes.

    PubMed

    Zhao, Yong; Yu, Jin; Fang, Li-Guang; Zheng, Jun; Wang, Hui-Qin; Yuan, Ji-Ren; Wu, Shaolong; Cheng, Guo-An

    2015-12-01

    Semiconductor nanowire photoelectrochemical cells have attracted extensive attention in the light-conversion field owing to the low-cost preparation, excellent optical absorption, and short distance of carrier collection. Although there are numbers of experimental investigations to improve the device performance, the understanding of the detailed process of photoelectric conversion needs to be further improved. In this work, a thorough optoelectronic simulation is employed to figure out how the nanowire diameter, doping concentration, and illumination wavelength affect the photoelectric conversion characteristics of the silicon nanowire array photoelectrodes. We find that two balances should be carefully weighted between optical absorption and photogenerated-carrier collection, along with between short-circuit photocurrent density and open-circuit voltage. For the small-diameter nanowire array photoelectrodes, the overall absorption is higher than that of the larger-diameter ones with the most contribution from the nanowires. However, the substrate shows increasing absorption with increasing illumination wavelength. Higher doping density leads to a larger open-circuit voltage; while lower doping density can guarantee a relatively higher short-circuit photocurrent. To obtain high-light-conversion-efficiency photoelectrodes, the doping density should be carefully chosen with considerations of illumination wavelength and surface recombination. Suppressing the surface recombination velocity can effectively enhance the short-circuit photocurrent (open-circuit voltage) for the lightly (heavily) doped nanowire array photoelectrodes. Our systematical results provide a theoretical guidance for the photoelectrochemical devices based on semiconductor nanostructures.

  6. Fabrication of a dual-layer aluminum nanowires polarization filter array.

    PubMed

    Gruev, Viktor

    2011-11-21

    In this paper we present a procedure for fabricating an array of micropolarization filter array via an optimized interference lithography and microfabrication procedure. The filter array is composed of two linear polarization filters offset by 45 degrees with pixel pitch of 18 microns. The individual polarization filters are composed of aluminum nanowires with 140 nm pitch, 140 nm height and 70 nm width. The maximum extinction ratio of the pixelated filters is measured to be 95 at 700 nm wavelength.

  7. An air gap moderates the performance of nanowire array transistors

    NASA Astrophysics Data System (ADS)

    Yang, Tong; Mehta, Jeremy S.; Mativetsky, Jeffrey M.

    2017-03-01

    Solution-processed nanowires are promising for low-cost and flexible electronics. When depositing nanowires from solution, due to stacking of the nanowires, an air gap exists between the substrate and much of the active material. Here, using confocal Raman spectroscopy, we quantify the thickness of the air gap in transistors comprising organic semiconductor nanowires. The average air gap thickness is found to be unexpectedly large, being at least three times larger than the nanowire diameter, leading to a significant impact on transistor performance. The air gap acts as an additional dielectric layer that reduces the accumulation of charge carriers due to a gate voltage. Conventional determination of the charge carrier mobility ignores the presence of an air gap, resulting in an overestimate of charge carrier accumulation and an underestimate of charge carrier mobility. It is shown that the larger the air gap, the larger the mobility correction (which can be greater than an order of magnitude) and the larger the degradation in on–off current ratio. These results demonstrate the importance of minimizing the air gap and of taking the air gap into consideration when analyzing the electrical performance of transistors consisting of stacked nanowires. This finding is applicable to all types of stacked one-dimensional materials including organic and inorganic nanowires, and carbon nanotubes.

  8. An air gap moderates the performance of nanowire array transistors.

    PubMed

    Yang, Tong; Mehta, Jeremy S; Mativetsky, Jeffrey M

    2017-03-24

    Solution-processed nanowires are promising for low-cost and flexible electronics. When depositing nanowires from solution, due to stacking of the nanowires, an air gap exists between the substrate and much of the active material. Here, using confocal Raman spectroscopy, we quantify the thickness of the air gap in transistors comprising organic semiconductor nanowires. The average air gap thickness is found to be unexpectedly large, being at least three times larger than the nanowire diameter, leading to a significant impact on transistor performance. The air gap acts as an additional dielectric layer that reduces the accumulation of charge carriers due to a gate voltage. Conventional determination of the charge carrier mobility ignores the presence of an air gap, resulting in an overestimate of charge carrier accumulation and an underestimate of charge carrier mobility. It is shown that the larger the air gap, the larger the mobility correction (which can be greater than an order of magnitude) and the larger the degradation in on-off current ratio. These results demonstrate the importance of minimizing the air gap and of taking the air gap into consideration when analyzing the electrical performance of transistors consisting of stacked nanowires. This finding is applicable to all types of stacked one-dimensional materials including organic and inorganic nanowires, and carbon nanotubes.

  9. Field emission from in situ-grown vertically aligned SnO2 nanowire arrays

    PubMed Central

    2012-01-01

    Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters. PMID:22330800

  10. Morphology-dependent field emission properties and wetting behavior of ZnO nanowire arrays

    PubMed Central

    2011-01-01

    The fabrication of three kinds of ZnO nanowire arrays with different structural parameters over Au-coated silicon (100) by facile thermal evaporation of ZnS precursor is reported, and the growth mechanism are proposed based on structural analysis. Field emission (FE) properties and wetting behavior were revealed to be strongly morphology dependent. The nanowire arrays in small diameter and high aspect ratio exhibited the best FE performance showing a low turn-on field (4.1 V/μm) and a high field-enhancement factor (1745.8). The result also confirmed that keeping large air within the films was an effective way to obtain super water-repellent properties. This study indicates that the preparation of ZnO nanowire arrays in an optimum structural model is crucial to FE efficiency and wetting behavior. PMID:21711609

  11. Effect of As preadsorption on InAs nanowire heteroepitaxy on Si(111): A first-principles study

    NASA Astrophysics Data System (ADS)

    Koga, Hiroaki

    2009-12-01

    Arsenic preadsorption has recently been found to be crucial for selective-area epitaxial growth of oriented III-V semiconductor nanowires on Si(111). To understand the effect of preadsorption on the heteroepitaxy, this first-principles study examines the structure of As-adsorbed Si(111) surfaces. Reconstruction models such as adatom, trimer, and dimer-adatom-stacking fault structures are found to be metastable. The stability of unreconstructed arsenide structure (1×1-As) is confirmed but the faulted and unfaulted domains of 1×1-As are found to be practically degenerate in energy. These domains can therefore coexist on a Si(111)-As surface, and then epitaxial growth will be disrupted at domain boundaries where translational symmetry is broken. Indium adsorption on the Si(111)-As surface, however, destabilizes unfaulted domains, thus assisting its transformation into a coherent surface that allows epitaxy. This effect is attributed to the interlayer covalent interactions induced by In p electrons.

  12. Transmission electron microscopy assisted in-situ joule heat dissipation study of individual InAs nanowires

    SciTech Connect

    Xu, T. T.; Wei, X. L. E-mail: qingchen@pku.edu.cn; Shu, J. P.; Chen, Q. E-mail: qingchen@pku.edu.cn

    2013-11-04

    Managing heat transport at nanoscale is an important and challenging task for nanodevice applications and nanostructure engineering. Herein, through in-situ engineering nanowire (NW)-electrode contacts with electron beam induced carbon deposition in a transmission electron microscope, Joule heat dissipation along individual suspended Indium Arsenide NWs is well managed to obtain pre-designed temperature profiles along NWs. The temperature profiles are experimentally determined by the breakdown site of NWs under Joule heating and breakdown temperature measurement. A model with NW-electrode contacts being well considered is proposed to describe heat transport along a NW. By fitting temperature profiles with the model, thermal conductance at NW-electrode contacts is obtained. It is found that, the temperature profile along a specific NW is mainly governed by the relative thermal conductance at the two NW-electrode contacts, which is engineered in experiments.

  13. Tuning the magnetic anisotropy of Co-Ni nanowires: comparison between single nanowires and nanowire arrays in hard-anodic aluminum oxide membranes.

    PubMed

    Vega, V; Böhnert, T; Martens, S; Waleczek, M; Montero-Moreno, J M; Görlitz, D; Prida, V M; Nielsch, K

    2012-11-23

    Co(x)Ni(1-x) alloy nanowires with varying Co content (0 ≤ x ≤ 0.95), having a diameter of 130 nm and length of around 20 μm, are synthesized by template-assisted electrodeposition into the nanopores of SiO(2) conformal coated hard-anodic aluminum oxide membranes. The magneto-structural properties of both single isolated nanowires and hexagonally ordered nanowire arrays of Co-Ni alloys are systematically studied by means of magneto-optical Kerr effect magnetometry and vibrating sample magnetometry, respectively, allowing us to compare different alloy compositions and to distinguish between the magnetostatic and magnetocrystalline contributions to the effective magnetic anisotropy for each system. The excellent tunable soft magnetic properties and magnetic bistability exhibited by low Co content Co-Ni nanowires indicate that they might become the material of choice for the development of nanostructured magnetic systems and devices as an alternative to Fe-Ni alloy based systems, being chemically more robust. Furthermore, Co contents higher than 51 at.% allow us to modify the magnetic behavior of Co-rich nanowires by developing well controlled magnetocrystalline anisotropy, which is desirable for data storage applications.

  14. Magnetic and structural properties of the electrochemically deposited arrays of Co and CoFe nanowires

    NASA Astrophysics Data System (ADS)

    Khan, H. R.; Petrikowski, K.

    2002-09-01

    Magnetic and structural properties of the arrays of 18 nm diameter nanowires of Co and Co 90Fe 10 electrodeposited in the pores of anodic alumina are investigated. Arrays of Co and Co 90Fe 10 nanowires show perpendicular magnetic anisotropy and textured crystallographic behaviour. Coercivity Hc (⊥) and remanence Mr/ Ms (⊥) values of 2275 Oe (Co 90Fe 10); 1188 Oe (Co) and 96% (Co 90Fe 10), 81% (Co) are observed. The continuous films of Co and Co 90Fe 10 on Cu substrates show in plane magnetic anisotropy and coercivity values between 109 and 288 Oe.

  15. Si/PEDOT:PSS core/shell nanowire arrays for efficient hybrid solar cells.

    PubMed

    Lu, Wenhui; Wang, Chengwei; Yue, Wei; Chen, Liwei

    2011-09-01

    A solution filling and drying method has been demonstrated to fabricate Si/PEDOT:PSS core/shell nanowire arrays for hybrid solar cells. The hybrid core/shell nanowire arrays show excellent broadband anti-reflection, and resulting hybrid solar cells absorb about 88% of AM 1.5G photons in the 300-1100 nm range. The power conversion efficiency (PCE) of the hybrid solar cell reaches 6.35%, and is primarily limited by direct and indirect interfacial recombination of charge carriers.

  16. Design of two dimensional silicon nanowire arrays for antireflection and light trapping in silicon solar cells

    NASA Astrophysics Data System (ADS)

    Ding, Wuchang; Jia, Rui; Li, Haofeng; Chen, Chen; Sun, Yun; Jin, Zhi; Liu, Xinyu

    2014-01-01

    Silicon nitride coated nanowire arrays have been investigated as an efficient antireflection structure for silicon solar cells. The minimum average reflectance could reach 1.62% under AM1.5 spectrum. Scattering effects of silicon nanowire arrays also result in enhanced absorption in the substrate, and analytical results show that the scattered light can be well trapped in silicon substrate when the back surface is passivated by silicon dioxide. This ultra-low surface reflection property combined with light trapping effect may have potential applications in silicon solar cells with thin substrate.

  17. Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

    NASA Astrophysics Data System (ADS)

    Li, Kai-Li; An, Jun-Ming; Zhang, Jia-Shun; Wang, Yue; Wang, Liang-Liang; Li, Jian-Guang; Wu, Yuan-Da; Yin, Xiao-Jie; Hu, Xiong-Wei

    2016-12-01

    The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016902), the National Natural Science Foundation of China (Grant Nos. 61274047, 61435013, 61307034, and 61405188), and the National Key Research and Development Program of China (Grant No. 2016YFB0402504).

  18. Stable field emission from arrays of vertically aligned free-standing metallic nanowires

    NASA Astrophysics Data System (ADS)

    Xavier, Stephane; Mátéfi-Tempfli, Stefan; Ferain, Etienne; Purcell, Stephen; Enouz-Védrenne, Shaïma; Gangloff, Laurent; Minoux, Eric; Hudanski, Ludovic; Vincent, Pascal; Schnell, Jean-Philippe; Pribat, Didier; Piraux, Luc; Legagneux, Pierre

    2008-05-01

    We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry and density, based on electrochemical filling of nanopores in track-etched templates. Nanowire growth is performed at room temperature, atmospheric pressure and is compatible with low cost fabrication and large surfaces. This technique offers an excellent control of the orientation, shape and nanowires density. It is applied to fabricate field emission arrays with a good control of the emission site density. We have prepared Co, Ni, Cu and Rh nanowires with a height of 3 µm, a diameter of 80 nm and a density of ~107 cm-2. The electron field emission measurements and total energy distributions show that the as-grown nanowires exhibit a complex behaviour, first with emission activation under high field, followed by unstable emission. A model taking into account the effect of an oxide layer covering the nanowire surface is developed to explain this particular field emission behaviour. Finally, we present an in situ cleaning procedure by ion bombardment that collectively removes this oxide layer, leading to a stable and reproducible emission behaviour. After treatment, the emission current density is ~1 mA cm-2 for a 30 V µm-1 applied electric field.

  19. Investigation of surface plasmon resonance in composite nanostructure of silver film and nanowire array

    NASA Astrophysics Data System (ADS)

    Li, Jun; Yang, Junyi; Wu, Xingzhi; Song, Yinglin

    2016-10-01

    We investigate the surface plasmon resonance in a new composite nanostructure (Nanowires array beneath metal film). Computational simulation results exhibit that, for both transverse electric(TE) and transverse magnetic (TM) polarization, the positions of resonance peaks is extremely sensitive to the change of center distance (Filling ratio of nanowires). When the diameter of Nanowires is 4nm and under TM polarization, the resonance angle increasing with the increase of center distance. In the case of TE polarization, the result is completely the opposite within limits. It is also shown that changes in thickness of Ag film(At the top of the Ag nanowire) has little direct effect on the resonance angle, But the characteritics of SPR intensity is influenced by the thickness of Ag film in the most degree. When the thickness of Ag film is 50 nm, In range of 10nm to 100nm, the minimum value of the reflectance is only 0.05, the result is consistent with the previous studies. Additionally, the nano composite structure material is very sensitive to the refractive index change of the lowest layer when under the TE- polarization. we have done mode analysis of the SPR structure for both simple and practical structures using comsol multiphysics, our approach is intend to show the feasibity and extend the applicability of the plasmonic nanowires, could lead to provide the basis for design the new structure of nanowires array.

  20. Finite-size effect on magnetic properties in iron sulfide nanowire arrays.

    PubMed

    Yue, G H; Yan, P X; Wang, L S; Wang, W; Chen, Y Z; Peng, D L

    2008-05-14

    We report the size effect on the magnetic properties in Fe(7)S(8) nanowire arrays. Samples with diameters in the range of 50-200 nm have been prepared by electrodeposition with AAO films. The Mössbauer measurement results show that four parameters (hyperfine fields, isomer shift, quadrupole splitting, full width at half-maximum) increased with decreasing the diameter of the nanowires. The magnetic properties were investigated. The hysteresis loop shape and the magnetization are dependent on the diameter of the nanowires. The thermomagnetic measurements on the as-synthesized nanowire samples and the corresponding bulk display a mixed-type curve and a Weiss-type curve, respectively.

  1. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes.

    PubMed

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-09-04

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H₂O₂) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM⁻¹·cm⁻²) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors.

  2. Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

    PubMed Central

    Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

    2015-01-01

    In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

  3. Platinum nanowire microelectrode arrays for neurostimulation applications: Fabrication, characterization, and in-vitro retinal cell stimulation

    NASA Astrophysics Data System (ADS)

    Whalen, John J., III

    Implantable electrical neurostimulating devices are being developed for a number of applications, including artificial vision through retinal stimulation. The epiretinal prosthesis will use a two-dimensional array microelectrodes to address individual cells of the retina. MEMS fabrication processes can produce arrays of microelectrodes with these dimensions, but there are two critical issues that they cannot satisfy. One, the stimulating electrodes are the only part of the implanted electrical device that penetrate through the water impermeable package, and must do so without sacrificing hermeticity. Two, As electrode size decreases, the current density (A cm-2 ) increases, due to increased electrochemical impedance. This reduces the amount of charge that can be safely injected into the tissue. To date, MEMS processing method, cannot produce electrode arrays with good, prolonged hermetic properties. Similarly, MEMS approaches do not account for the increased impedance caused by decreased surface area. For these reasons there is a strong motivation for the development of a water-impermeable, substrate-penetrating electrode array with low electrochemical impedance. This thesis presents a stimulating electrode array fabricated from platinum nanowires using a modified electrochemical template synthesis approach. Nanowires are electrochemically deposited from ammonium hexachloroplatinate solution into lithographically patterned nanoporous anodic alumina templates to produce microarrays of platinum nanowires. The platinum nanowires penetrating through the ceramic aluminum oxide template serve as parallel electrical conduits through the water impermeable, electrically insulating substrate. Electrode impedance can be adjusted by either controlling the nanowire hydrous platinum oxide content or by partially etching the alumina template to expose additional surface area. A stepwise approach to this project was taken. First, the electrochemistry of ammonium

  4. Vertical Si nanowire arrays fabricated by magnetically guided metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Chun, Dong Won; Kim, Tae Kyoung; Choi, Duyoung; Caldwell, Elizabeth; Kim, Young Jin; Paik, Jae Cheol; Jin, Sungho; Chen, Renkun

    2016-11-01

    In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices.

  5. Vertical Si nanowire arrays fabricated by magnetically guided metal-assisted chemical etching.

    PubMed

    Chun, Dong Won; Kim, Tae Kyoung; Choi, Duyoung; Caldwell, Elizabeth; Kim, Young Jin; Paik, Jae Cheol; Jin, Sungho; Chen, Renkun

    2016-11-11

    In this work, vertically aligned Si nanowire arrays were fabricated by magnetically guided metal-assisted directional chemical etching. Using an anodized aluminum oxide template as a shadow mask, nanoscale Ni dot arrays were fabricated on an Si wafer to serve as a mask to protect the Si during the etching. For the magnetically guided chemical etching, we deposited a tri-layer metal catalyst (Au/Fe/Au) in a Swiss-cheese configuration and etched the sample under the magnetic field to improve the directionality of the Si nanowire etching and increase the etching rate along the vertical direction. After the etching, the nanowires were dried with minimal surface-tension-induced aggregation by utilizing a supercritical CO2 drying procedure. High-resolution transmission electron microscopy (HR-TEM) analysis confirmed the formation of single-crystal Si nanowires. The method developed here for producing vertically aligned Si nanowire arrays could find a wide range of applications in electrochemical and electronic devices.

  6. Electric-Field Guided Synthesis of Standalone Nanowire Arrays for Thermoelectric Applications

    NASA Astrophysics Data System (ADS)

    San Hor, Yew

    2012-02-01

    Theoretical studies have suggested that figure of merits of thermoelectric materials can be improved through fabrications of nanoscaled thermoelectric materials. Thin films are expected to result in up to a seven fold improvement in efficiency over bulk materials; even greater enhancement, up to 15 times in efficiency, is expected for very thin wires. Researchers have already succeeded in increasing the efficiency by making thin-layered materials and nanowires of a non-thermoelectric material, i.e. silicone. For practical applications, however, arrays of standalone nanowires or isolated thermoelectric nanowire devices without any template will be required. Here I present an electromagnetic field guided nanostructured synthesis of an array of standalone thermoelectric nanowires. This technique utilizing electric field as a guide in building highly ordered nanostructures will be an elegant, ``bottom-up'' method for nanofabrication without the need of a template. An array of quasi-one dimensional chalcogenide nanowires has been successfully grown in between two conducting plates. Thermoelectric transport measurements including thermalconductivity, thermoelectric power and figure of merit can be easily performed in the device, without any need of complicated electron beam lithography technique.

  7. Pulse electrodeposition and electrochemical quartz crystal microbalance techniques for high perpendicular magnetic anisotropy cobalt nanowire arrays

    SciTech Connect

    Ursache, Andrei; Goldbach, James T.; Russell, Thomas P.; Tuominen, Mark T.

    2005-05-15

    This research is focused on the development of pulse electrodeposition techniques to fabricate a high-density array of vertically oriented, high-magnetic anisotropy cobalt nanowires using a porous polymer film template. This type of array is a competitive candidate for future perpendicular magnetic media capable of storage densities exceeding 1 Terabit/in.{sup 2} The polymer template, derived from a self-assembling P(S-b-MMA) diblock copolymer film, provides precise control over the nanowire diameter (15 nm) and interwire spacing (24 nm), whereas nanowire length (typically 50 to 1000 nm) is controlled accurately with the aid of real-time electrochemical quartz crystal monitoring. Pulse and pulse-reversed electrodeposition techniques, as compared to dc, are shown to significantly enhance the perpendicular magnetic anisotropy of the magnetic nanowire array and ultimately result in coercivity as large as 2.7 kOe at 300 K. Magnetic and structural characterizations suggest that these properties arise from an improved degree of magnetocrystalline anisotropy (due to c-axis oriented crystal growth and improvements in crystal quality) that strongly supplements the basic shape anisotropy of the nanowires. Low temperature magnetometry is used to investigate exchange bias effects due to the incorporation of CoO antiferromagnetic impurities during the electrodeposition process and subsequent Co oxidation in air.

  8. Microwave properties of ferromagnetic nanowire arrays patterned with periodic and quasi-periodic structures

    NASA Astrophysics Data System (ADS)

    Lei, Yuxiong; Chen, Zheng; Li, Liangliang

    2015-05-01

    Microwave properties of ferromagnetic nanowire arrays patterned with periodic and quasi-periodic structures were investigated in this study. The periodic and quasi-periodic structures were designed based on Fibonacci sequence and golden ratio. Ni nanowires arrays were electrodeposited in anodic aluminum oxide (AAO) templates with patterned Cu electrodes, and then the AAO templates were attached to the coplanar waveguide lines fabricated on quartz substrate for measurement. The S21 of both periodic and quasi-periodic structure-patterned Ni nanowire arrays showed an extra absorption peak besides the absorption peak due to the ferromagnetic resonance of Ni nanowires. The frequency of the absorption peak caused by the patterned structure could be higher than 40 GHz when the length and arrangement of the structural units were modified. In addition, the frequency of the absorption peak due to the quasi-periodic structure was calculated based on a simple analytical model, and the calculated value was consistent with the measured one. The experimental data showed that it could be a feasible approach to tune the performance of microwave devices by patterning ferromagnetic nanowires.

  9. Photoelectrochemical Activity of As-Grown, a-Fe2O3 Nanowire Array Electrodes for Water Splitting

    SciTech Connect

    Chernomordik, B. D.; Russell, H. B.; Cvelbar, U.; Jasinski, J. B.; Kumar, V.; Deutsch, T.; Sunkara, M. K.

    2012-05-17

    Undoped hematite nanowire arrays grown using plasma oxidation of iron foils show significant photoactivity ({approx}0.38 mA cm{sup -2} at 1.5 V versus reversible hydrogen electrode in 1 M KOH). In contrast, thermally oxidized nanowire arrays grown on iron exhibit no photoactivity due to the formation of a thick (>7 {micro}m Fe{sub 1-x}O) interfacial layer. An atmospheric plasma oxidation process required only a few minutes to synthesize hematite nanowire arrays with a 1-5 {micro}m interfacial layer of magnetite between the nanowire arrays and the iron substrate. An amorphous oxide surface layer on hematite nanowires, if present, is shown to decrease the resulting photoactivity of as-synthesized, plasma grown nanowire arrays. The photocurrent onset potential is improved after removing the amorphous surface on the nanowires using an acid etch. A two-step method involving high temperature nucleation followed by growth at low temperature is shown to produce a highly dense and uniform coverage of nanowire arrays.

  10. Co/Au multisegmented nanowires: a 3D array of magnetostatically coupled nanopillars

    NASA Astrophysics Data System (ADS)

    Bran, C.; Ivanov, Yu P.; Kosel, J.; Chubykalo-Fesenko, O.; Vazquez, M.

    2017-03-01

    Arrays of multisegmented Co/Au nanowires with designed segment lengths and diameters have been prepared by electrodeposition into aluminum oxide templates. The high quality of the Co/Au interface and the crystallographic structure of Co segments have determined by high-resolution transmission electron microscopy. Magnetic hysteresis loop measurements show larger coercivity and squareness of multisegmented nanowires as compared to single segment Co nanowires. The complementary micromagnetic simulations are in good agreement with the experimental results, confirming that the magnetic behavior is defined mainly by magnetostatic coupling between different segments. The proposed structure constitutes an innovative route towards a 3D array of synchronized magnetic nano-oscillators with large potential in nanoelectronics.

  11. An InN/InGaN/GaN nanowire array guided wave photodiode on silicon

    NASA Astrophysics Data System (ADS)

    Hazari, Arnab; Zunaid Baten, Md.; Yan, Lifan; Millunchick, Joanna M.; Bhattacharya, Pallab

    2016-11-01

    The III-nitride nanowire heterostructure arrays with multiple InN disk light absorbing regions have been grown by plasma-assisted molecular beam epitaxy on (001)Si substrates, and guided wave photodiodes have been fabricated and characterized. The spectral photocurrent of the devices has been measured under reverse bias, and the data exhibit distinct shoulders in the range of 0.69-3.2 eV (0.39-1.8 μm). The estimated responsivity at a wavelength of 1.3 μm is 0.2 A/W. The nanowire photodiode response was also measured with an excitation at one facet provided by an edge-emitting laser fabricated with the same nanowire array and emitting at 1.3 μm.

  12. Co/Au multisegmented nanowires: a 3D array of magnetostatically coupled nanopillars.

    PubMed

    Bran, C; Ivanov, Yu P; Kosel, J; Chubykalo-Fesenko, O; Vazquez, M

    2017-03-03

    Arrays of multisegmented Co/Au nanowires with designed segment lengths and diameters have been prepared by electrodeposition into aluminum oxide templates. The high quality of the Co/Au interface and the crystallographic structure of Co segments have determined by high-resolution transmission electron microscopy. Magnetic hysteresis loop measurements show larger coercivity and squareness of multisegmented nanowires as compared to single segment Co nanowires. The complementary micromagnetic simulations are in good agreement with the experimental results, confirming that the magnetic behavior is defined mainly by magnetostatic coupling between different segments. The proposed structure constitutes an innovative route towards a 3D array of synchronized magnetic nano-oscillators with large potential in nanoelectronics.

  13. Antibacterial activity of single crystalline silver-doped anatase TiO2 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangyu; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin

    2016-05-01

    Well-ordered, one-dimensional silver-doped anatase TiO2 nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO2 nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

  14. Bandgap tuning of silicon nanowire arrays for application to all-silicon tandem solar cells

    NASA Astrophysics Data System (ADS)

    Kurokawa, Yasuyoshi; Yano, Mitsugu; Miyajima, Shinsuke; Yamada, Akira

    2017-04-01

    To reduce the diameter of silicon nanowire (SiNW) arrays for bandgap tuning, a diameter reduction (DR) process incorporating H3PO4 oxidation and HF etching was conducted for SiNW arrays with a diameter of 30 nm and a length of 15 µm. After the DR process, the diameter of SiNW arrays around the tip was successfully reduced to below 10 nm. From the cathode luminescence measurement, the bandgap around the tip of SiNW arrays was estimated to be 1.2 eV, suggesting that bandgap widening occurred owing to the quantum size effect.

  15. Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.

    PubMed

    Sun, Bai; Li, Chang Ming

    2015-03-14

    A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.

  16. MOF Thin Film-Coated Metal Oxide Nanowire Array: Significantly Improved Chemiresistor Sensor Performance.

    PubMed

    Yao, Ming-Shui; Tang, Wen-Xiang; Wang, Guan-E; Nath, Bhaskar; Xu, Gang

    2016-07-01

    A strategy for combining metal oxides and metal-organic frameworks is proposed to design new materials for sensing volatile organic compounds, for the first time. The prepared ZnO@ZIF-CoZn core-sheath nanowire arrays show greatly enhanced performance not only on its selectivity but also on its response, recovery behavior, and working temperature.

  17. Magnetic-optical bifunctional CoPt3/Co multilayered nanowire arrays

    NASA Astrophysics Data System (ADS)

    Su, Yi-Kun; Yan, Zhi-Long; Wu, Xi-Ming; Liu, Huan; Ren, Xiao; Yang, Hai-Tao

    2015-10-01

    CoPt3/Co multilayered nanowire (NW) arrays are synthesized by pulsed electrodeposition into nanoporous anodic aluminum oxide (AAO) templates. The electrochemistry deposition parameters are determined by cyclic voltammetry to realize the well control of the ratio of Co to Pt and the length of every segment. The x-ray diffraction (XRD) patterns show that both Co and CoPt3 NWs exhibit face-centered cubic (fcc) structures. In the UV-visible absorption spectra, CoPt3/Co NW arrays show a red-shift with respect to pure CoPt3NWs. Compared with the pure Co nanowire arrays, the CoPt3/Co multilayered nanowire arrays show a weak shape anisotropy and well-modulated magnetic properties. CoPt3/Co multilayered nanowires are highly encouraging that new families of bimetallic nanosystems may be developed to meet the needs of nanomaterials in emerging multifunctional nanotechnologies. Project supported by the National Natural Science Foundation of China (Grant Nos. 51472165, 51471185, and 11274370).

  18. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties.

    PubMed

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-28

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications.

  19. Fast growth of well-aligned ZnO nanowire arrays by a microwave heating method and their photocatalytic properties

    NASA Astrophysics Data System (ADS)

    Cao, Guangxia; Hong, Kunquan; Wang, Wenda; Liu, Liqing; Xu, Mingxiang

    2016-10-01

    The fast growth of aligned ZnO nanowire arrays with optimized structure is attractive for electrical and optical devices. In this paper, we report a controllable and rapid growth of ZnO nanowire arrays by a microwave-assisted hydrothermal method. When using different zinc salts as the precursors, the morphology of the samples changes a lot and the length growth rate is several times different. The growth mechanism is also investigated. It is found that the solution near neutral pH value is ideal for fast nanowire growth, in which the length of the nanowires increases linearly with growth time and the growth rate is over ten times faster than that in the traditional hydrothermal method. Therefore, aligned ZnO nanowire arrays can grow up to tens of microns in a few hours, while the density and sizes of these nanowires can be well controlled. The ZnO nanowire arrays used as photocatalysts present good photocatalytic performance to the degradation of methyl orange (MO) due to the large surface area. So this paper provides an effective method to obtain vertically aligned ZnO nanowire arrays for practical applications.

  20. 15% Power Conversion Efficiency from a Gated Nanotube/Silicon Nanowire Array Solar Cell

    NASA Astrophysics Data System (ADS)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-03-01

    Despite their enhanced light trapping ability the performance of silicon nanowire array solar cells have, been stagnant with power conversion efficiencies barely breaking 10%. The problem is understood to be the consequence of a high photo-carrier recombination at the large surface area of the Si nanowire sidewalls. Here, by exploiting 1) electronic gating via an ionic liquid electrolyte to induce inversion in the n-type Si nanowires and 2) using a layer of single wall carbon nanotubes engineered to contact each nanowire tip and extract the minority carriers, we demonstrate silicon nanowire array solar cells with power conversion efficiencies of 15%. Our results allow for discrimination between the two principle means of avoiding front surface recombination: surface passivation and the use of local fields. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue a non-encapsulation based solution is also described. We gratefully acknowledge support from the National Science Foundation under ECCS-1232018.

  1. Eu-doped ZnO nanowire arrays grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.; Ahmadi, M.; Cuenya, B. Roldan; Rudzevich, Y.; Lin, Y.; Chow, L.

    2013-10-01

    The preparation of efficient light emitting diodes requires active optical layers working at low voltage for light emission. Trivalent lanthanide doped wide-bandgap semiconducting oxide nanostructures are promising active materials in opto-electronic devices. In this work we report on the electrochemical deposition (ECD) of Eu-doped ZnO (ZnO:Eu) nanowire arrays on glass substrates coated with F-doped polycrystalline SnO2. The structural, chemical and optical properties of ZnO:Eu nanowires have been systematically characterized by X-ray diffraction, transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and photoluminescence. XRD results suggest the substitution of Zn2+ by Eu ions in the crystalline lattice. High-resolution TEM and associated electron diffraction studies indicate an interplanar spacing of 0.52 nm which corresponds to the (0 0 0 1) crystal plane of the hexagonal ZnO, and a growth along the c-direction. The ZnO:Eu nanowires have a single crystal structure, without noticeable defects. According to EDX, SIMS and XPS studies, cationic Eu species are detected in these samples showing the incorporation of Eu into the ZnO matrix. The oxidation states of europium ions in the nanowires are determined as +3 (74%) and +2 (26%). Photoluminescence studies demonstrated red emission from the Eu-doped ZnO nanowire arrays. When Eu was incorporated during the nanowire growth, the sharp 5D0-7F2 transition of the Eu3+ ion at around 612 nm was observed. These results suggest that Eu doped ZnO nanowires could pave the way for efficient, multispectral LEDs and optical devices.

  2. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition.

    PubMed

    Wang, Hong-Wen; Ting, Chi-Feng; Hung, Miao-Ken; Chiou, Chwei-Huann; Liu, Ying-Ling; Liu, Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-02-04

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO(2) core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO(2) layers onto the ITO or ITO/TiO(2) nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO(2) core-shell nanowires or pristine TiO(2) films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  3. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties.

    PubMed

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-03-24

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA.

  4. Fabrication of ZnO Nanowires Arrays by Anodization and High-Vacuum Die Casting Technique, and Their Piezoelectric Properties

    PubMed Central

    Kuo, Chin-Guo; Chang, Ho; Wang, Jian-Hao

    2016-01-01

    In this investigation, anodic aluminum oxide (AAO) with arrayed and regularly arranged nanopores is used as a template in the high-vacuum die casting of molten zinc metal (Zn) into the nanopores. The proposed technique yields arrayed Zn nanowires with an aspect ratio of over 600. After annealing, arrayed zinc oxide (ZnO) nanowires are obtained. Varying the anodizing time yields AAO templates with thicknesses of approximately 50 μm, 60 μm, and 70 μm that can be used in the fabrication of nanowires of three lengths with high aspect ratios. Experimental results reveal that a longer nanowire generates a greater measured piezoelectric current. The ZnO nanowires that are fabricated using an alumina template are anodized for 7 h and produce higher piezoelectric current of up to 69 pA. PMID:27023546

  5. Solar energy harnessing in hexagonally arranged Si nanowire arrays and effects of array symmetry on optical characteristics.

    PubMed

    Li, Junshuai; Yu, HongYu; Li, Yali

    2012-05-17

    Investigation of solar energy harvesting in hexagonally arranged Si nanowire (NW) arrays is performed through optimizing the structural parameters, such as array periodicity (P), Si NW diameter (D) and length (L). The results demonstrate that there exist wide P and D/P 'windows' for the Si NW arrays, locating around 600 nm and 0.833 (i.e., D=500 nm), respectively, for achieving enhanced light absorption compared to their thin film counterparts with the same thickness, but with much less materials consumption. Calculation of the ultimate efficiency (UE) indicates that the light trapping capability is not monotonically increased with L, and that UE vibration is found when L is >1000 nm. Comparison of the light absorption spectra for hexagonally and squarely arranged Si NW arrays demonstrates that these two most widely employed array symmetries in practice have little impact on the light trapping capability.

  6. Fabrication of large arrays of metallic nanowires on V-grooved substrates

    NASA Astrophysics Data System (ADS)

    Jorritsma, J.; Gijs, M. A. M.; Schönenberger, C.; Stienen, J. G. H.

    1995-09-01

    Large arrays of Au nanowires down to 50 nm in width are fabricated on V-grooved InP substrates. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V-shaped grooves with a 200 nm period. Next, the patterned substrates are covered with a thin Au film, which is subsequently structured into nanowires using a well controlled wet etching process. Initial characterization confirms that the wires are electrically continuous.

  7. Fabrication and phase variation in annealed Cu 3Se 2 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Jagminas, Arūnas; Tomašiūnas, Rolandas; Krotkus, Arūnas; Juškėnas, Remigijus; Aleksejenko, Genadijus

    2009-06-01

    We have found for the first time that Cu 3Se 2 nanowired products encased inside the alumina pores by electrodeposition demonstrate the promising nonlinear optical properties in UV-vis-NIR spectra region. Furthermore, the annealing of these products results in the formation of Cu 2- xSe with x depending on the annealing temperature. Optical nonlinearities of as-grown and thermally treated copper selenide nanowire arrays were evidenced using the standard open-aperture Z-scan and laser pump-probe techniques.

  8. Fabrication of nanowire arrays over micropyramids for efficient Si solar cell

    NASA Astrophysics Data System (ADS)

    Pant, Namrata; Singh, Prashant; Srivastava, Sanjay Kumar; Shukla, Vivek Kumar

    2016-05-01

    To improve the efficiency of solar cell, trapping the sunlight and using it to its maximum limit has been the area of research for past several decades. In the present work, texturisation of silicon surface has been done to make nanowire arrays over micropyramids. Micropyramids on Si surface increases the surface area, reduce the reflectivity and hence help to enhance the solar cell performance. Additionally, with the aim to further reduce the reflectance of Si surface, nanowire arrays over micro pyramids were fabricated. For this, samples with variation in their nanotexturisation time (etching time) were prepared. Measurements like SEM and UV-Vis reflectance spectroscopy were performed on the samples to investigate the changes with etching time. It was observed that the reflectance of planar Si in the spectral range 400 to 1000 nm is ˜35%. The reflectance of microtextured (micropyramid) Si surface is significantly reduced to ˜11%. A further decrease in reflectivity was observed when nanowire arrays were grown over the micropyramids. This may be attributed to the effective light trapping caused by multiple scattering of the incident light from the nanowires over micropyramids. Hence, it may improve silicon solar cell efficiency.

  9. In situ fabrication of inorganic nanowire arrays grown from and aligned on metal substrates.

    PubMed

    Zhang, Weixin; Yang, Shihe

    2009-10-20

    The full potential of nanotechnology can be unleashed only when one is able not only to synthesize a rich variety of nanoscale building blocks but also assemble them into various patterns at the supramolecular and supracluster levels. In particular, the application of nanoparticle and nanowire materials often requires their assembly in the form of thin films, preferably on conductive surfaces for electrical addressing, control, and detection. Although a dazzling array of nanostructures has been fabricated by bottom-up approaches, one of the contemporary challenges is to assemble these nanostructures so that they introduce and realize functionalities. An alluring avenue is to simultaneously accomplish both the nanostructure synthesis and assembly on a useful substrate in a parallel fashion, affording the advantages of simplicity, low cost, and high throughput. In this Account, we review our recent work on growing inorganic nanowires (for example, metal sulfides, metal oxides, and so forth) directly from and on metal substrates in arrays without using templates and catalysts. This method of engineering nanowire arrays on metal substrates integrates the nanowire synthesis and assembly into a parallel process, both in time and in space, by exploiting in situ chemistry on the metal substrates. Both gas-phase and solution-phase approaches have been developed to synthesize the aligned nanowires; here, full advantage is taken of interfacial kinetics of restricted diffusion and surface-specific reactions, often accompanied by new interfacial growth mechanisms. The setting of nanowire arrays on metal substrates has allowed exploration of their application potentials in areas such as field electron emission and chemical sensing. The approaches described here are general, and we predict that they will be extended to more inorganic materials, such as metal halides. Moreover, as more control is achieved with synthetic methods, inorganic nanowire arrays should provide unusual

  10. Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

    NASA Astrophysics Data System (ADS)

    Gotschke, T.; Schumann, T.; Limbach, F.; Stoica, T.; Calarco, R.

    2011-03-01

    Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

  11. Matrix replacement route to vertically aligned nickel nanowire array/polydimethylsiloxane nanocomposite film

    NASA Astrophysics Data System (ADS)

    Meng, Xin; Zhou, Liang-Tian; Zhu, Ji-Xiang; Song, Jie; Wang, Xuan-Rui; Qiao, Zheng-Ping

    2008-12-01

    Vertically aligned magnetic anisotropic nickel (Ni) nanowire (NW) array/polydimethylsiloxane (PDMS) film was prepared from (Ni NW array)/anodic aluminum oxide by a simple matrix replacement route. The main challenge is to preserve the parallelly aligned Ni NW during replacement. The diameter and thickness of the as-prepared Ni NW and the Ni NW array/PDMS film are 8 mm and 60 μm, respectively. The magnetic property measurement shows that the film has remarkably enhanced coercivity and remanence ratio compared to that of bulk nickel and exhibits perpendicular magnetic anisotropy.

  12. Structure and magnetic properties of metastable Co-Cu solid solution nanowire arrays fabricated by electrodeposition

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Li, Fashen; Wang, Ying; Song, Lijing

    2006-08-01

    Nanowire arrays of the metastable Cox Cu1-x (0.20 x 0.85) solid solution system which can not be obtained by equilibrium methods, were prepared by electrodeposition in pores of anodic aluminum oxide (AAO) template, and subsequently annealed at different temperatures. The as-deposited samples all show single phase of fcc structure, and lattice parameters decrease with the increase of Co content and fundamentally accord with Vegard's law. The phase transition with heat treatment was investigated by X-ray diffraction and differential thermal analysis (DTA) which further confirmed the formation of solid solution. With Co content increasing, the coercivity along nanowire axis for as-deposited samples increases, but it decreases for the annealed samples at 700 °C. This phenomenon was explained considering the interaction of Co particles through Cu in nanowires after phase separation.

  13. Zinc oxide nanowire arrays for photovoltaic and light-emitting devices

    NASA Astrophysics Data System (ADS)

    Janfeshan, Bita; Sadeghimakki, Bahareh; Jahed, Navid M. S.; Sivoththaman, Siva

    2013-03-01

    Knowledge of carrier transfer, in quantum dot sensitized solar cells, is the key to engineering the device structure and architecture optimization. In this work, Zinc oxide (ZnO) nanowire (NW) arrays were synthesized on glass wafers and on GaN thin films for application in photovoltaic and light-emitting devices. The nanowires grown on glass wafers were incorporated with CdSe/ZnS quantum dots (QD) and their steady state and lifetime photoluminescence (PL) were studied to investigate the feasibility of electron transfer from excited QDs to ZnO NWs. The results provide an indication that the injected electrons, from excited high quantum efficiency QDs, live longer and hence facilitate electron transport without undergoing non-radiative recombination at surface trap states. Morphology and optical properties of the ZnO nanowires on GaN film were also studied for application in light-emitting devices.

  14. Self-assembled ZnS nanowire arrays: synthesis, in situ Cu doping and field emission

    NASA Astrophysics Data System (ADS)

    Liu, Baodan; Bando, Yoshio; Jiang, Xin; Li, Chun; Fang, Xiaosheng; Zeng, Haibo; Terao, Takeshi; Tang, Chengchun; Mitome, Masanori; Golberg, Dmitri

    2010-09-01

    Well-aligned single-crystalline ZnS nanowire arrays have been grown on highly conductive Cu substrates through controlling the morphology evolution of self-patterned ZnS nanoparticles. The ZnS nanowires have sharp tips with an average size of ~ 30 nm and a length of ~ 3 µm. Field emission measurements demonstrated that the aligned ZnS nanowires grown on Cu substrates are excellent field emitters having a turn-on field as low as 2.92 V µm - 1 and a field-enhancement factor as high as 3400. The use of highly conductive metal substrate may promote the commercial applications of ZnS-based emitters in flat panel displays and other optoelectronic devices.

  15. Laser Modified ZnO/CdSSe Core-Shell Nanowire Arrays for Micro-Steganography and Improved Photoconduction

    NASA Astrophysics Data System (ADS)

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-09-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved.

  16. Laser modified ZnO/CdSSe core-shell nanowire arrays for Micro-Steganography and improved photoconduction.

    PubMed

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-09-12

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved.

  17. Contact printing of horizontally-aligned p-type Zn₃P₂ nanowire arrays for rigid and flexible photodetectors.

    PubMed

    Yu, Gang; Liang, Bo; Huang, Hongtao; Chen, Gui; Liu, Zhe; Chen, Di; Shen, Guozhen

    2013-03-08

    Zn(3)P(2) is an important p-type semiconductor with the ability to detect almost all visible and ultraviolet light. By using the simple and efficient contact printing process, we reported the assembly of horizontally-aligned p-type Zn(3)P(2) nanowire arrays to be used as building blocks for high performance photodetectors. Horizontally-aligned Zn(3)P(2) nanowire arrays were first printed on silicon substrate to make thin-film transistors, exhibiting typical p-type transistor behavior with a high on/off ratio of 10(3). Besides, the Zn(3)P(2) nanowire array based devices showed a substantial response to illuminated lights with a wide range of wavelengths and densities. Flexible photodetectors were also fabricated by contact printing of horizontally-aligned Zn(3)P(2) nanowire arrays on flexible PET substrate, showing a comparable performance to the device on rigid silicon substrate.

  18. Field-effect transistors from lithographically patterned cadmium selenide nanowire arrays.

    PubMed

    Ayvazian, Talin; Xing, Wendong; Yan, Wenbo; Penner, Reginald M

    2012-09-26

    Field-effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrodeposition (LPNE) process on SiO(2)/Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C × 4 h either with or without exposure to CdCl(2) in methanol-a grain growth promoter. The influence of CdCl(2) treatment was to increase the mean grain diameter from 10 to 80 nm as determined by grazing incidence X-ray diffraction and to convert the crystal structure from cubic to wurtzite. Measured transfer characteristics showed an increase of the field effect mobility (μ(eff)) by an order of magnitude from 1.94 × 10(-4) cm(2)/(V s) to 23.4 × 10(-4) cm(2)/(V s) for pc-CdSe nanowires subjected to the CdCl(2) treatment. The CdCl(2) treatment also reduced the threshold voltage (from 20 to 5 V) and the subthreshold slope (by ~35%). Transfer characteristics for pc-CdSe NWFETs were also influenced by the channel length, L. For CdCl(2)-treated nanowires, μ(eff) was reduced by a factor of eight as L increased from 5 to 25 μm. These channel length effects are attributed to the presence of defects including breaks and constrictions within individual pc-CdSe nanowires.

  19. Magnetic properties of Ni-Fe nanowire arrays: effect of template material and deposition conditions

    SciTech Connect

    Singleton, John; Aravamudhan, Shyan; Goddard, Paul A; Bhansali, Shekhar

    2008-01-01

    The objective of this work is to study the magnetic properties of arrays of Ni-Fe nanowires electrodeposited in different template materials such as porous silicon, polycarbonate and alumina. Magnetic properties were studied as a function of template material, applied magnetic field (parallel and perpendicular) during deposition, wire length, as well as magnetic field orientation during measurement. The results show that application of magnetic field during deposition strongly influences the c-axis preferred orientation growth of Ni-Fe nanowires. The samples with magnetic field perpendicular to template plane during deposition exhibits strong perpendicular anisotropy with greatly enhanced coercivity and squareness ratio, particularly in Ni-Fe nanowires deposited in polycarbonate templates. In case of polycarbonate template, as magnetic field during deposition increases, both coercivity and squareness ratio also increase. The wire length dependence was also measured for polycarbonate templates. As wire length increases, coercivity and squarness ratio decrease, but saturation field increases. Such magnetic behavior (dependence on template material, magnetic field, wire length) can be qualitatively explained by preferential growth phenomena, dipolar interactions among nanowires, and perpendicular shape anisotropy in individual nanowires.

  20. Development of multifunctional fiber reinforced polymer composites through ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Malakooti, Mohammad H.; Patterson, Brendan A.; Hwang, Hyun-Sik; Sodano, Henry A.

    2016-04-01

    Piezoelectric nanowires, in particular zinc oxide (ZnO) nanowires, have been vastly used in the fabrication of electromechanical devices to convert wasted mechanical energy into useful electrical energy. Over recent years, the growth of vertically aligned ZnO nanowires on various structural fibers has led to the development of fiber-based nanostructured energy harvesting devices. However, the development of more realistic energy harvesters that are capable of continuous power generation requires a sufficient mechanical strength to withstand typical structural loading conditions. Yet, a durable, multifunctional material system has not been developed thoroughly enough to generate electrical power without deteriorating the mechanical performance. Here, a hybrid composite energy harvester is fabricated in a hierarchical design that provides both efficient power generating capabilities while enhancing the structural properties of the fiber reinforced polymer composite. Through a simple and low-cost process, a modified aramid fabric with vertically aligned ZnO nanowires grown on the fiber surface is embedded between woven carbon fabrics, which serve as the structural reinforcement as well as the top and the bottom electrodes of the nanowire arrays. The performance of the developed multifunctional composite is characterized through direct vibration excitation and tensile strength examination.

  1. Electro-physical characterization of individual and arrays of ZnO nanowires

    SciTech Connect

    Mallampati, Bhargav; Singh, Abhay; Philipose, U.; Shik, Alex; Ruda, Harry E.

    2015-07-21

    Capacitance measurements were made on an array of parallel ZnO nanowires embedded in a polymer matrix and provided with two electrodes perpendicular to the nanowires. The capacitance monotonically increased, and saturated at large negative (depleting) and large positive (accumulating) voltages. A qualitative explanation for this behavior is presented, taking into account specific features of quasi-one-dimensional screening. The increasing or decreasing character of the capacitance-voltage characteristics were determined by the conductivity type of the nanowires, which in our case was n-type. A dispersion of the experimental capacitance was observed over the entire frequency range of 1 kHz to 5 MHz. This phenomenon is explained by the slow discharge of the nanowires through the thin dielectric layer that separates them from the top electrode. Separate measurements on individual identical nanowires in a field effect transistor configuration yielded an electron concentration and mobility of approximately 10{sup 17 }cm{sup −3} and 150 cm{sup 2}/Vs, respectively, at room temperature.

  2. Planar Arrays of Nanoporous Gold Nanowires: When Electrochemical Dealloying Meets Nanopatterning.

    PubMed

    Chauvin, Adrien; Delacôte, Cyril; Molina-Luna, Leopoldo; Duerrschnabel, Michael; Boujtita, Mohammed; Thiry, Damien; Du, Ke; Ding, Junjun; Choi, Chang-Hwan; Tessier, Pierre-Yves; El Mel, Abdel-Aziz

    2016-03-01

    Nanoporous materials are of great interest for various technological applications including sensors based on surface-enhanced Raman scattering, catalysis, and biotechnology. Currently, tremendous efforts are dedicated to the development of porous one-dimensional materials to improve the properties of such class of materials. The main drawback of the synthesis approaches reported so far includes (i) the short length of the porous nanowires, which cannot reach the macroscopic scale, and (ii) the poor organization of the nanostructures obtained by the end of the synthesis process. In this work, we report for the first time on a two-step approach allowing creating highly ordered porous gold nanowire arrays with a length up to a few centimeters. This two-step approach consists of the growth of gold/copper alloy nanowires by magnetron cosputtering on a nanograted silicon substrate, serving as a physical template, followed by a selective dissolution of copper by an electrochemical anodic process in diluted sulfuric acid. We demonstrate that the pore size of the nanowires can be tailored between 6 and 21 nm by tuning the dealloying voltage between 0.2 and 0.4 V and the dealloying time within the range of 150-600 s. We further show that the initial gold content (11 to 26 atom %) and the diameter of the gold/copper alloy nanowires (135 to 250 nm) are two important parameters that must carefully be selected to precisely control the porosity of the material.

  3. Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using SiNx templates

    NASA Astrophysics Data System (ADS)

    Paetzelt, H.; Gottschalch, V.; Bauer, J.; Benndorf, G.; Wagner, G.

    2008-11-01

    We report on the catalyst-free growth of GaAs and InAs nanowires using the selective-area metal organic vapor phase epitaxy (SA-MOVPE). The nanowires were grown from small circular openings defined by electron-beam lithography and wet chemical etching of a thin SiNx layer. This layer was deposited on a (1 1 1)B-oriented GaAs substrate using plasma enhanced chemical vapor deposition. We optimized the growth conditions for realizing extremely uniform arrays in a triangular lattice of GaAs and InAs nanowires with diameters down to 100 nm and a length of a few microns. During the growth the nanowires are formed by {1¯ 1 0} side facets and a growth direction perpendicular to the substrate surface. We investigated the growth behavior of GaAs nanowires with different diameters varying from 100 to 500 nm at different growth parameters, changing the temperature and the V/III ratio of TMG and AsH3. With a combination of GaAs and InAs SA-MOVPE growth radial heterostructures were grown. The structures were characterized by scanning electron microscopy, photoluminescence spectroscopy and transmission electron microscopy.

  4. Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

    PubMed Central

    2013-01-01

    This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

  5. Effects of various hydrogenated treatments on formation and photocatalytic activity of black TiO2 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Chih-Chieh; Chou, Po-Hsun

    2016-08-01

    The effects of hydrogen thermal and plasma treatment on the formation and photocatalytic activities of black TiO2 nanowire arrays were investigated and discussed. After either the hydrogen thermal or plasma treatment, the TiO2 nanowires remained. However, in contrast to the plasma treated nanowires, the diameter of the thermal treated TiO2 nanowires reduced more significantly, which was attributed to a thicker surface amorphous layer and more oxygen vacancies. A higher photoresponse in both UV and visible light regions and more hydroxide groups were also observed for the thermal treated nanowires. In addition, the black nanowires possessed greater carrier concentration, leading to a more efficient separation of electron-hole pairs. As a consequence, much enhanced photoelectrochemical water splitting and photocatalytic degradation of methylene blue were obtained.

  6. Electrodeposited Co93.2P6.8 nanowire arrays with core-shell microstructure and perpendicular magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Nasirpouri, F.; Peighambari, S. M.; Samardak, A. S.; Ognev, A. V.; Sukovatitsina, E. V.; Modin, E. B.; Chebotkevich, L. A.; Komogortsev, S. V.; Bending, S. J.

    2015-05-01

    We demonstrate the formation of an unusual core-shell microstructure in Co93.2P6.8 nanowires electrodeposited by alternating current (ac) in an alumina template. By means of transmission electron microscopy, it is shown that the coaxial-like nanowires contain amorphous and crystalline phases. Analysis of the magnetization data for Co-P alloy nanowires indicates that a ferromagnetic core is surrounded by a weakly ferromagnetic or non-magnetic phase, depending on the phosphor content. The nanowire arrays exhibit an easy axis of magnetization parallel to the wire axis. For this peculiar composition and structure, the coercivity values are 2380 ± 50 and 1260 ± 35 Oe, parallel and perpendicular to the plane directions of magnetization, respectively. This effect is attributed to the core-shell structure making the properties and applications of these nanowires similar to pure cobalt nanowires with an improved perpendicular anisotropy.

  7. Trace detection of dissolved hydrogen gas in oil using a palladium nanowire array.

    PubMed

    Yang, Fan; Jung, Dongoh; Penner, Reginald M

    2011-12-15

    The electrical resistance, R, of an array of 30 palladium nanowires is used to detect the concentration of dissolved hydrogen gas (H(2)) in transformer oil over the temperature range from 21 to 70 °C. The palladium nanowire array (PdNWA), consisting of Pd nanowires ∼100 nm (width), ∼20 nm (height), and 100 μm (length), was prepared using the lithographically patterned nanowire electrodeposition (LPNE) method. The R of the PdNWA increased by up to 8% upon exposure to dissolved H(2) at concentrations above 1.0 ppm and up to 2940 ppm at 21 °C. The measured limit-of-detection for dissolved H(2) was 1.0 ppm at 21 °C and 1.6 ppm at 70 °C. The increase in resistance induced by exposure to H(2) was linear with [H(2)](oil)(1/2) across this concentration range. A PdNWA sensor operating in flowing transformer oil has functioned continuously for 150 days.

  8. Photon lifetime correlated increase of Raman scattering and third-harmonic generation in silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Zabotnov, S. V.; Kholodov, M. M.; Georgobiani, V. A.; Presnov, D. E.; Golovan, L. A.; Kashkarov, P. K.

    2016-03-01

    Light propagation in silicon nanowire layers is studied via Raman scattering, third-harmonic generation and cross-correlation function measurements. The studied silicon nanowire arrays are characterized by a wire diameter of 50-100 nm and a layer thickness ranging from 0.2-16 μm. These structures are mesoscopic for light in the visible and near infrared ranges. The Raman signal increases monotonically with layer thickness increases at a 1.064 μm pump wavelength. The Stokes component for silicon nanowire arrays with a thickness larger than 2 μm exceeds that for crystalline silicon by more than an order. At the mentioned thicknesses, an increase is also registered for the third-harmonic signal, one that is up to fourfold greater than that for crystalline silicon for a 1.25 μm pump wavelength. Measurements of cross-correlation functions for the scattered photons evidence the significant photon lifetime increase in the silicon nanowire layers at their thickness increase. This fact can be connected with multiple scattering inside the studied mesoscopic structures and the increase of the interaction length for the Raman and third-harmonic generation processes.

  9. Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition.

    PubMed

    Sun, Hongyu; Li, Xiaohong; Chen, Yan; Guo, Defeng; Xie, Yanwu; Li, Wei; Liu, Baoting; Zhang, Xiangyi

    2009-10-21

    Controlling the growth orientation of semiconductor nanowire arrays is of vital importance for their applications in the fields of nanodevices. In the present work, hexagonal CdSe nanowire arrays with various preferential growth orientations have been successfully yielded by employing the electrodeposition technique using porous alumina as templates (PATs). We demonstrate by experimental and theoretical efforts that the growth orientation of the CdSe nanowires can be effectively manipulated by varying either the nanopore diameter of the PATs or the deposited current density, which has significant effects on the optical properties of the CdSe nanowires. The present study provides an alternative approach to tuning the growth direction of electrodeposited nanowires and thus is of importance for the fabrication of nanodevices with controlled functional properties.

  10. Diameter- and current-density-dependent growth orientation of hexagonal CdSe nanowire arrays via electrodeposition

    NASA Astrophysics Data System (ADS)

    Sun, Hongyu; Li, Xiaohong; Chen, Yan; Guo, Defeng; Xie, Yanwu; Li, Wei; Liu, Baoting; Zhang, Xiangyi

    2009-10-01

    Controlling the growth orientation of semiconductor nanowire arrays is of vital importance for their applications in the fields of nanodevices. In the present work, hexagonal CdSe nanowire arrays with various preferential growth orientations have been successfully yielded by employing the electrodeposition technique using porous alumina as templates (PATs). We demonstrate by experimental and theoretical efforts that the growth orientation of the CdSe nanowires can be effectively manipulated by varying either the nanopore diameter of the PATs or the deposited current density, which has significant effects on the optical properties of the CdSe nanowires. The present study provides an alternative approach to tuning the growth direction of electrodeposited nanowires and thus is of importance for the fabrication of nanodevices with controlled functional properties.

  11. Synthesis of Si/SiO2 core-shell nanowire arrays and broadband anti-reflection effects in diluted Si nanowire arrays by adjusting dielectric shell thickness.

    PubMed

    Li, Xinhua; Chen, Tao; Zhou, BuKang; Liu, Guangqiang; Shi, Tongfei; Wen, Long; Cao, Huaxiang; Wang, Yuqi

    2017-05-05

    A low filling ratio and enhanced absorption is needed to enable the full potential of Si nanowire (NW) arrays for optoelectronic applications. In this paper, we report a versatile, scalable fabrication technique that uses nanosphere lithography (NSL) patterning for the synthesis of vertically aligned Si and Si/SiO2 NW arrays. The optical reflection of the NW arrays can be substantially suppressed by the addition of the transparent shell. Meanwhile, by the finite-difference time-domain (FDTD) simulation, we find that the absorption enhancement in the core Si NW can be obtained by adding the transparent shell. The special absorption enhancement of the Si NW arrays with a core-shell structure can be theoretically understood by modal analysis. The absorption in such Si NW array structures is very sensitive to the thickness of transparent coating. By the addition of a SiO2 shell layer, the absorption in the inner Si NW array can be substantially enhanced. Furthermore, significant absorption enhancement and broadband anti-reflection effects can be achieved by the diluted Si NWs combined with the single dielectric shell.

  12. Enhanced photoelectrochemical hydrogen production from silicon nanowire array photocathode.

    PubMed

    Oh, Ilwhan; Kye, Joohong; Hwang, Seongpil

    2012-01-11

    Herein we report that silicon nanowires (SiNWs) fabricated via metal-catalyzed electroless etching yielded a photoelectrochemical hydrogen generation performance superior to that of a planar Si, which is attributed to a lower kinetic overpotential due to a higher surface roughness, favorable shift in the flat-band potential, and light-trapping effects of the SiNW surface. The SiNW photocathode yielded a photovoltage of 0.42 V, one of the highest values ever reported for hydrogen generation on p-type Si/electrolyte interfaces.

  13. A laser-assisted process to produce patterned growth of vertically aligned nanowire arrays for monolithic microwave integrated devices.

    PubMed

    Kerckhoven, Vivien Van; Piraux, Luc; Huynen, Isabelle

    2016-06-10

    An experimental process for the fabrication of microwave devices made of nanowire arrays embedded in a dielectric template is presented. A pulse laser process is used to produce a patterned surface mask on alumina templates, defining precisely the wire growing areas during electroplating. This technique makes it possible to finely position multiple nanowire arrays in the template, as well as produce large areas and complex structures, combining transmission line sections with various nanowire heights. The efficiency of this process is demonstrated through the realisation of a microstrip electromagnetic band-gap filter and a substrate-integrated waveguide.

  14. Density Detection of Aligned Nanowire Arrays Using Terahertz Time-Domain Spectroscopy.

    PubMed

    Xiang, Wenfeng; Wang, Xin; Liu, Yuan; Zhang, JiaQi; Zhao, Kun

    2016-12-01

    A rapid technique is necessary to quantitatively detect the density of nanowire (NW) and nanotube arrays in one-dimensional devices which have been identified as useful building blocks for nanoelectronics, optoelectronics, biomedical devices, etc. Terahertz (THz) time-domain spectroscopy was employed in this research to detect the density of aligned Ni NW arrays. The transmitted amplitude of THz peaks and optical thickness of NW arrays was found to be the effective parameters to analyze the density change of NW arrays. Owing to the low multiple scattering and high order of Ni NW arrays, a linear relationship was observed for the transmitted amplitude and optical thickness regarding NW density, respectively. Therefore, THz technique may be used as a promising tool to characterize the density of one-dimensional structures in the large-scale integrated nanodevice fabrication.

  15. Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection.

    PubMed

    In, Hyun Jin; Field, Christopher R; Pehrsson, Pehr E

    2011-09-02

    Nanowires of various materials and configurations have been shown to be highly effective in the detection of chemical and biological species. In this paper, we report a novel, nanosphere-enabled approach to fabricating highly sensitive gas sensors based on ordered arrays of vertically aligned silicon nanowires topped with a periodically porous top electrode. The vertical array configuration helps to greatly increase the sensitivity of the sensor while the pores in the top electrode layer significantly improve sensing response times by allowing analyte gases to pass through freely. Herein, we show highly sensitive detection to both nitrogen dioxide (NO(2)) and ammonia (NH(3)) in humidified air. NO(2) detection down to 10 parts per billion (ppb) is demonstrated and an order-of-magnitude improvement in sensor response time is shown in the detection of NH(3).

  16. Controllable fabrication of ultrafine oblique organic nanowire arrays and their application in energy harvesting

    NASA Astrophysics Data System (ADS)

    Zhang, Lu; Cheng, Li; Bai, Suo; Su, Chen; Chen, Xiaobo; Qin, Yong

    2015-01-01

    Ultrafine organic nanowire arrays (ONWAs) with a controlled direction were successfully fabricated by a novel one-step Faraday cage assisted plasma etching method. The mechanism of formation of nanowire arrays is proposed; the obliquity and aspect ratio can be accurately controlled from approximately 0° to 90° via adjusting the angle of the sample and the etching time, respectively. In addition, the ONWAs were further utilized to improve the output of the triboelectric nanogenerator (TENG). Compared with the output of TENG composed of vertical ONWAs, the open-circuit voltage, short-circuit current and inductive charges were improved by 73%, 150% and 98%, respectively. This research provides a convenient and practical method to fabricate ONWAs with various obliquities on different materials, which can be used for energy harvesting.

  17. Controllable fabrication of ultrafine oblique organic nanowire arrays and their application in energy harvesting.

    PubMed

    Zhang, Lu; Cheng, Li; Bai, Suo; Su, Chen; Chen, Xiaobo; Qin, Yong

    2015-01-28

    Ultrafine organic nanowire arrays (ONWAs) with a controlled direction were successfully fabricated by a novel one-step Faraday cage assisted plasma etching method. The mechanism of formation of nanowire arrays is proposed; the obliquity and aspect ratio can be accurately controlled from approximately 0° to 90° via adjusting the angle of the sample and the etching time, respectively. In addition, the ONWAs were further utilized to improve the output of the triboelectric nanogenerator (TENG). Compared with the output of TENG composed of vertical ONWAs, the open-circuit voltage, short-circuit current and inductive charges were improved by 73%, 150% and 98%, respectively. This research provides a convenient and practical method to fabricate ONWAs with various obliquities on different materials, which can be used for energy harvesting.

  18. Low temperature magnetoresistance measurements on bismuth nanowire arrays.

    PubMed

    Kaiser, Ch; Weiss, G; Cornelius, T W; Toimil-Molares, M E; Neumann, R

    2009-05-20

    We present low temperature resistance R(T) and magnetoresistance measurements for Bi nanowires with diameters between 100 and 500 nm, which are close to being single-crystalline. The nanowires were fabricated by electrochemical deposition in pores of polycarbonate membranes. R(T) varies as T(2) in the low temperature range 1.5 K

  19. Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

    PubMed Central

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-01-01

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  20. Ultrahigh density array of vertically aligned small-molecular organic nanowires on arbitrary substrates.

    PubMed

    Starko-Bowes, Ryan; Pramanik, Sandipan

    2013-06-18

    In recent years π-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication. A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently π-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important π-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors

  1. Flexible Dye-Sensitized Solar Cell based on Vertical ZnO Nanowire Arrays

    SciTech Connect

    Chu, Sheng; Li, Dongdong; Chang, Pai-Chun; Lu, Jia Grace

    2010-09-26

    Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices.

  2. Flexible Dye-Sensitized Solar Cell Based on Vertical ZnO Nanowire Arrays

    PubMed Central

    2011-01-01

    Flexible dye-sensitized solar cells are fabricated using vertically aligned ZnO nanowire arrays that are transferred onto ITO-coated poly(ethylene terephthalate) substrates using a simple peel-off process. The solar cells demonstrate an energy conversion efficiency of 0.44% with good bending tolerance. This technique paves a new route for building large-scale cost-effective flexible photovoltaic and optoelectronic devices. PMID:27502660

  3. Periodically Porous Top Electrodes on Vertical Nanowire Arrays for Highly Sensitive Gas Detection

    DTIC Science & Technology

    2011-08-01

    highly sensitive detection to both nitrogen dioxide (NO2) and ammonia (NH3) in humidified air. NO2 detection down to 10 parts per billion (ppb) is... humidified air. NO2 detection down to 10 parts per billion (ppb) is demonstrated and an order-of-magnitude improvement in sensor response time is shown in...controllable size and distribution. Fast and highly sensitive detection of ammonia and nitrogen dioxide in humidified air using the PTE nanowire array sensor

  4. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    NASA Astrophysics Data System (ADS)

    Tanta, R.; Madsen, M. H.; Liao, Z.; Krogstrup, P.; Vosch, T.; Nygârd, J.; Jespersen, T. S.

    2015-12-01

    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  5. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    SciTech Connect

    Tanta, R.; Krogstrup, P.; Nygård, J.; Jespersen, T. S.; Madsen, M. H.; Liao, Z.; Vosch, T.

    2015-12-14

    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  6. Effects of annealing on the structure and magnetic properties of Fe27Co23Pb50 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, R. L.; Tang, S. L.; Shi, Y. G.; Fei, X. L.; Nie, B.; Du, Y. W.

    2008-04-01

    Ferromagnetic-nonmagnetic heterogeneous Fe27Co23Pb50 ternary metal nanowire arrays were successfully fabricated by alternating current electrodeposition into anodic alumina oxide (AAO) template. The effects of the different annealing temperatures (100, 200, 300, 400, 500, 600°C) on the structure and magnetic properties have been discussed. X-ray diffraction observations indicated that FeCo and Pb phases coexist for the as-deposited and annealed samples. Magnetic measurements indicate that the nanowire arrays have high perpendicular magnetic anisotropy with their easy axis parallel to the nanowire arrays. The coercivity and remanence ratio increases as the annealing temperature rises, reaches their maximum at 400°C, and then decreases as the annealing temperature rises further. The mechanism of the magnetic properties and magnetic variety should be attributed to the special structure of the nanowires/AAO.

  7. Energy penetration into arrays of aligned nanowires irradiated with relativistic intensities: Scaling to terabar pressures.

    PubMed

    Bargsten, Clayton; Hollinger, Reed; Capeluto, Maria Gabriela; Kaymak, Vural; Pukhov, Alexander; Wang, Shoujun; Rockwood, Alex; Wang, Yong; Keiss, David; Tommasini, Riccardo; London, Richard; Park, Jaebum; Busquet, Michel; Klapisch, Marcel; Shlyaptsev, Vyacheslav N; Rocca, Jorge J

    2017-01-01

    Ultrahigh-energy density (UHED) matter, characterized by energy densities >1 × 10(8) J cm(-3) and pressures greater than a gigabar, is encountered in the center of stars and inertial confinement fusion capsules driven by the world's largest lasers. Similar conditions can be obtained with compact, ultrahigh contrast, femtosecond lasers focused to relativistic intensities onto targets composed of aligned nanowire arrays. We report the measurement of the key physical process in determining the energy density deposited in high-aspect-ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 × 10(19) W cm(-2), we demonstrate energy penetration depths of several micrometers, leading to UHED plasmas of that size. Relativistic three-dimensional particle-in-cell simulations, validated by these measurements, predict that irradiation of nanostructures at intensities of >1 × 10(22) W cm(-2) will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 × 10(10) J cm(-3), equivalent to a pressure of 0.35 Tbar.

  8. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    PubMed Central

    Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jurgen; Chubykalo-Fesenko, Oksana; Vázquez, Manuel

    2016-01-01

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories. PMID:27030143

  9. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    PubMed Central

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-01-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5–3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications. PMID:25241800

  10. A vertical tip-tip contact silicon nanowire array for gas sensing.

    PubMed

    Lin, Leimiao; Liu, Dong; Chen, Qiaofen; Zhou, Hongzhi; Wu, Jianmin

    2016-10-20

    Novel chemiresistive gas sensors based on a vertical tip-tip contact silicon nanowire (TTC-SiNW) array were constructed. The welding of TTC-SiNWs after joule heating treatment was confirmed by a current-voltage curve (I-V curve). The TTC-SiNW structure not only resolved the problem of electrode contact encountered in conventional nanowire sensors, but also elongated the nanowire length to increase the void space for fast gas diffusion. The TTC-SiNW sensor comprising the same two types of SiNW arrays responded to NO2 very sensitively. The LOD for the p-p and n-n contact SiNW arrays is around 150 ppb and 3 ppb (S/N = 3), respectively. Furthermore, the highly oriented nano-junction formed on the TTC structure provided solid evidence to clarify the contribution of the nanojunction to gas sensing behavior. The TTC-SiNW sensor with a p-n junction displays a significant rectification effect. The sensitive response towards NO2 (LOD is about 18 ppb) was observed at a reverse bias voltage, whereas the response at a forward bias voltage was insignificant. Finally, the mechanism of gas sensing behavior on different types of TTC structures was proposed.

  11. Energy Density in Aligned Nanowire Arrays Irradiated with Relativistic Intensities: Path to Terabar Pressure Plasmas

    NASA Astrophysics Data System (ADS)

    Rocca, J.; Bargsten, C.; Hollinger, R.; Shylaptsev, V.; Wang, S.; Rockwood, A.; Wang, Y.; Keiss, D.; Capeluto, M.; Kaymak, V.; Pukhov, A.; Tommasini, R.; London, R.; Park, J.

    2016-10-01

    Ultra-high-energy-density (UHED) plasmas, characterized by energy densities >1 x 108 J cm-3 and pressures greater than a gigabar are encountered in the center of stars and in inertial confinement fusion capsules driven by the world's largest lasers. Similar conditions can be obtained with compact, ultra-high contrast, femtosecond lasers focused to relativistic intensities onto aligned nanowire array targets. Here we report the measurement of the key physical process in determining the energy density deposited in high aspect ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 x 1019 W cm-2, we demonstrate energy penetration depths of several μm, leading to UHED plasmas of that size. Relativistic 3D particle-in-cell-simulations validated by these measurements predict that irradiation of nanostructures at increased intensity will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 x 1010 J cm-3, equivalent to a pressure of 0.35 Tbar. This work was supported by the Fusion Energy Program, Office of Science of the U.S Department of Energy, and by the Defense Threat Reduction Agency.

  12. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    NASA Astrophysics Data System (ADS)

    Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jurgen; Chubykalo-Fesenko, Oksana; Vázquez, Manuel

    2016-03-01

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  13. A Photocatalytic Rotating Disc Reactor with TiO₂ Nanowire Arrays Deposited for Industrial Wastewater Treatment.

    PubMed

    Li, Fang; Szeto, Wai; Huang, Haibao; Li, Jiantao; Leung, Dennis Y C

    2017-02-22

    A photocatalytic rotating disc reactor (PRD-reactor) with TiO₂ nanowire arrays deposited on a thin Ti plate is fabricated and tested for industrial wastewater treatment. Results indicate that the PRD-reactor shows excellent decolorization capability when tested with methyl orange (>97.5%). Advanced oxidation processes (AOP), including photocatalytic oxidation and photolytic reaction, occurred during the processing. Efficiency of the AOP increases with reduction in light absorption pathlength, which enhanced the photocatalytic reaction, as well as by increasing oxygen exposure of the wastewater thin film due to the rotating disc design. It is found that, with a small dosage of hydrogen peroxide, the mineralization efficiency of industrial biodegraded wastewater can be enhanced, with a superior mineralization of >75% total organic carbon (TOC) removal. This is due to the fact that the TiO₂ photocatalysis and hydrogen peroxide processes generate powerful oxidants (hydroxyl radicals) that can strongly improve photocatalytic oxidation efficiency. Application of this industrial wastewater treatment system is benefited from the TiO₂ nanowire arrays, which can be fabricated by a mild solvothermal method at 80 °C and under atmospheric pressure. Similar morphologies and microstructures are found for the TiO₂ nanowire arrays deposited on a large metal Ti disc, which makes the wastewater treatment process more practical and economical.

  14. Energy penetration into arrays of aligned nanowires irradiated with relativistic intensities: Scaling to terabar pressures

    PubMed Central

    Bargsten, Clayton; Hollinger, Reed; Capeluto, Maria Gabriela; Kaymak, Vural; Pukhov, Alexander; Wang, Shoujun; Rockwood, Alex; Wang, Yong; Keiss, David; Tommasini, Riccardo; London, Richard; Park, Jaebum; Busquet, Michel; Klapisch, Marcel; Shlyaptsev, Vyacheslav N.; Rocca, Jorge J.

    2017-01-01

    Ultrahigh-energy density (UHED) matter, characterized by energy densities >1 × 108 J cm−3 and pressures greater than a gigabar, is encountered in the center of stars and inertial confinement fusion capsules driven by the world’s largest lasers. Similar conditions can be obtained with compact, ultrahigh contrast, femtosecond lasers focused to relativistic intensities onto targets composed of aligned nanowire arrays. We report the measurement of the key physical process in determining the energy density deposited in high-aspect-ratio nanowire array plasmas: the energy penetration. By monitoring the x-ray emission from buried Co tracer segments in Ni nanowire arrays irradiated at an intensity of 4 × 1019 W cm−2, we demonstrate energy penetration depths of several micrometers, leading to UHED plasmas of that size. Relativistic three-dimensional particle-in-cell simulations, validated by these measurements, predict that irradiation of nanostructures at intensities of >1 × 1022 W cm−2 will lead to a virtually unexplored extreme UHED plasma regime characterized by energy densities in excess of 8 × 1010 J cm−3, equivalent to a pressure of 0.35 Tbar. PMID:28097218

  15. Enhancing absorption properties of composite nanosphere and nanowire arrays by localized surface plasmon resonance shift

    NASA Astrophysics Data System (ADS)

    Tang, Xiaobing; Zhou, Leping; Du, Xiaoze; Yang, Yongping

    Nanoparticles with nonmetallic core and metallic shell can improve the spectral solar absorption efficiency for traditional working fluids, due to the localized surface plasmon resonance (LSPR) effect exists at the surfaces of these core-shell composite nanoparticles. In this work, the effect of geometry and material, and hence the LSPR effect, on the optical absorption properties of core-shell nanostructures was numerically demonstrated by the finite difference time domain method. The nanostructures were formed by varying the inner and outer radii of the composite nanospheres and nanowires and by changing the particle spacing for their arrays. The result indicates that varying the inner radius itself can tune the absorption efficiency factors of the nanostructures monotonously, while an optimal outer radius may exist for maximizing the absorption efficiency factors. It also shows that varying the inner radius itself can widen the absorption spectrums for the arrays, but the absorptance tends to increase with decreasing inner radius or particle spacing. Meanwhile, the second absorption peaks may be observed for nanowires or nanosphere/nanowire arrays, which can be tuned by the resonance shifts induced by the change of either inner or outer radius and hence the LSPR effect. The coupled LSPR effect under studied can be efficiently utilized for tuning the optical absorption properties of nanoparticles used in many applications including photothermal conversion, and perspective also exists for many other applications including surface-enhanced Raman spectroscopy (SERS) enhancement.

  16. Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

    NASA Astrophysics Data System (ADS)

    Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

    2014-09-01

    In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5-3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications.

  17. Plasmon-mediated radiative energy transfer across a silver nanowire array via resonant transmission and subwavelength imaging.

    PubMed

    Zhou, Zhang-Kai; Li, Min; Yang, Zhong-Jian; Peng, Xiao-Niu; Su, Xiong-Rui; Zhang, Zong-Suo; Li, Jian-Bo; Kim, Nam-Chol; Yu, Xue-Feng; Zhou, Li; Hao, Zhong-Hua; Wang, Qu-Quan

    2010-09-28

    Efficient plasmon-mediated excitation energy transfer between the CdSe/ZnS semiconductor quantum dots (QDs) across the silver nanowire array up to 560 nm in length is observed. The subwavelength imaging and spectral response of the silver nanowire arrays with near-field point-source excitations are revealed by theoretical simulations. Our studies demonstrate three advantages of the nanosystem: efficient exciton-plasmon conversion at the input side of the array through near-field strong coupling, directional waveguidance and resonant transmission via half-wave plasmon modes of the nanowire array, and subwavelength imaging at the output side of the array. These advantages allow a long-range radiative excitation energy transfer with a high efficiency and a good directionality.

  18. Thickness dependent self limiting 1-D tin oxide nanowire arrays by nanosecond pulsed laser irradiation

    SciTech Connect

    Shirato, N.; Strader, J.; Kumar, Amit; Vincent, A.; Zhang, P.; Karakoti, Ajay S.; Nachimuthu, Ponnusamy; Cho, H-J.; Seal, Sudipta; Kalyanaraman, R.

    2011-01-23

    Fast, sensitive and discriminating detection of hydrogen at room temperature is crucial for storage, transportation, and distribution of hydrogen as an energy source. One dimensional nanowires of SnO2 are potential candidates for improved H2 sensor performance. The single directional conducting continuous nanowires can decrease electrical noise, and their large active surface area could improve the response and recovery time of the sensor. In this work we discuss synthesis and characterization of nanowire arrays made using nanosecond ultraviolet wavelength (266 nm) laser interference processing of ultrathin SnO2 films on SiO2 substrates. The laser energy was chosen to be above the melting point of the films. The results show that the final nanowire formation is dominated by preferential evaporation as compared to thermocapillary flow. The nanowire height (and hence wire aspect ratio) increased with increasing initial film thickness ho and with increasing laser energy density Eo. Furthermore, a self-limiting effect was observed where-in the wire formation ceased at a specific final remaining thickness of SnO2 that was almost independent of ho for a given Eo. To understand these effects, finite element modeling of the nanoscale laser heating was performed. This showed that the temperature rise under laser heating was a strong non-monotonic function of film thickness. As a result, the preferential evaporation rate varies as wire formation occurs, eventually leading to a shut-off of evaporation at a characteristic thickness. This results in the stoppage of wire formation. This combination of nanosecond pulsed laser experiments and thermal modeling shows that several unique synthesis approaches can be utilized to control the nanowire characteristics.

  19. Design guidelines of periodic Si nanowire arrays for solar cell application

    NASA Astrophysics Data System (ADS)

    Li, Junshuai; Yu, HongYu; Wong, She Mein; Li, Xiaocheng; Zhang, Gang; Lo, Patrick Guo-Qiang; Kwong, Dim-Lee

    2009-12-01

    In this letter, optimum periodic Si nanowire (SiNW) arrays are designed via simulation for solar cell application, in terms of the structural parameters, e.g., the array periodicity (P) and SiNW diameter (D). It is found that the more efficient light absorption compared to that of the Si thin film with the same thickness could be realized when P is between 250 and 1200 nm. Further, the ratio of D to P should be >0.5 (or more specifically ˜0.8) for the optimized solar energy harvesting. The underlying physics is also discussed in this work.

  20. Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-12-15

    Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires. Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.

  1. Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

    NASA Astrophysics Data System (ADS)

    Chen, Si; Chen, Jiangtao; Liu, Jianlin; Qi, Jing; Wang, Yuhua

    2016-11-01

    Field emitters based on ZnO nanowires and other nanomaterials are promising high-brightness electron sources for field emission display, microscopy and other applications. The performance of a ZnO nanowire field emitter is linked to the quality, conductivity and alignment of the nanowires on a substrate, therefore requiring ways to improve these parameters. Here, ZnO nanowire arrays were grown on ZnO seed layer on silicon substrate with MgO buffer between the seed layer and Si. The turn-on field and enhancement factor of these nanowire arrays are 3.79 V/μm and 3754, respectively. These properties are improved greatly compared to those of ZnO nanowire arrays grown on ZnO seed layer without MgO buffer, which are 5.06 V/μm and 1697, respectively. The enhanced field emission properties can be attributed to better electron transport in seed layer, and better nanowire alignment because of MgO buffer.

  2. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

    PubMed

    Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

    2016-02-10

    Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

  3. Improved Thermal Behavior of Multiple Linked Arrays of Silicon Nanowires Integrated into Planar Thermoelectric Microgenerators

    NASA Astrophysics Data System (ADS)

    Dávila, Diana; Tarancón, Albert; Calaza, Carlos; Salleras, Marc; Fernández-Regúlez, Marta; Paulo, Alvaro San; Fonseca, Luis

    2013-07-01

    Low-dimensional structures have been shown to be promising candidates for enhancing the thermoelectric properties of semiconductors, paving the way for integration of thermoelectric generators into silicon microtechnology. With this aim, dense arrays of well-oriented and size-controlled silicon nanowires (Si NWs) obtained by the chemical vapor deposition (CVD)-vapor-liquid-solid (VLS) mechanism have been implemented into microfabricated structures to develop planar unileg thermoelectric microgenerators ( μTEGs). Different low-thermal-mass suspended structures have been designed and microfabricated on silicon-on-insulator (SOI) substrates to operate as microthermoelements using p-type Si NW arrays as the thermoelectric material. To obtain nanowire arrays with effective lengths larger than normally attained by the VLS technique, structures composed of multiple ordered arrays consecutively bridged by transversal microspacers have been fabricated. The successive linkage of multiple Si NW arrays enabled the development of larger temperature differences while preserving good electrical contact. This gives rise to small internal thermoelement resistances, enhancing the performance of the devices as energy harvesters.

  4. High density micro-pyramids with silicon nanowire array for photovoltaic applications.

    PubMed

    Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

    2014-12-05

    We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs.

  5. Micromagnetic simulation and the angular dependence of coercivity and remanence for array of polycrystalline nickel nanowires

    NASA Astrophysics Data System (ADS)

    Fuentes, G. P.; Holanda, J.; Guerra, Y.; Silva, D. B. O.; Farias, B. V. M.; Padrón-Hernández, E.

    2017-02-01

    We present here our experimental results for the preparation and characterization of nanowires of nickel and the analysis of the angular dependence of coercivity and remanence using experimental data and micromagnetic simulation. The fabrication was made by using aluminum oxide membranes as templates and deposited nickel by an electrochemical route. The magnetic measurements showed that coercivity and remanence are dependent of the angle of application of the external magnetic field. Our results are different than that expected for the coherent, vortex and transversal modes of the reversion for the magnetic moments. According to the transmission electron microscopy analysis we can see that our nanowires have not a perfect cylindrical format. That is why we have used the ellipsoids chain model for better understanding the real structure of wires and its relation with the magnetic behavior. In order to generate theoretical results for this configuration we have made micromagnetic simulation using Nmag code. Our numerical results for the realistic distances are in correspondence with the magnetic measurements and we can see that there are contradictions if we assume the transverse reversal mode. Then, we can conclude that structure of nanowires should be taken into account to understand the discrepancies reported in the literature for the reversion mechanism in arrays of nickel nanowires.

  6. Microstructure and superconductivity of highly ordered YBa(2)Cu(3)O(7-δ) nanowire arrays.

    PubMed

    Zhang, Genqiang; Lu, Xiaoli; Zhang, Tao; Qu, Jifeng; Wang, Wei; Li, Xiaoguang; Yu, Shuhong

    2006-08-28

    In order to explore the fundamental properties of one-dimensional nanostructured high-temperature superconductors and enhance their promising applications, a universal and general method for the synthesis of high-quality YBa(2)Cu(3)O(7-δ) (YBCO) nanowire arrays is developed, which involves the combination of a novel sol-gel process to lower the crystallization temperature of YBCO, and porous anodic alumina (PAA) as an effective morphology-directing hard template. Field-emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) results indicate that the as-prepared YBCO nanowires have average diameters of about 50 nm and lengths up to several microns. The structures of the samples were analysed by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy-dispersive x-ray spectroscopy (EDX) and inductively coupled plasma (ICP) analysis, which indicate that the nanowires are well crystallized with orthorhombic YBCO-123 structure. The magnetization measurement under zero-field-cooled (ZFC) mode indicates that the superconducting transition temperature (T(c)) of the nanowires is about 92 K, which is in agreement with that of a bulk YBCO sample.

  7. Wire-supported CdSe nanowire array photoelectrochemical solar cells.

    PubMed

    Zhang, Luhui; Shi, Enzheng; Li, Zhen; Li, Peixu; Jia, Yi; Ji, Chunyan; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai; Cao, Anyuan

    2012-03-14

    Previous fiber-shaped solar cells are based on polymeric materials or dye-sensitized wide band-gap oxides. Here, we show that efficient fiber solar cells can be made from semiconducting nanostructures (e.g. CdSe) with smaller band-gap as the light absorption material. We directly grow a vertical array of CdSe nanowires uniformly around a core metal wire and make the device by covering the top of nanowires with a carbon nanotube (CNT) film as the porous transparent electrode. The CdSe-CNT fiber solar cells show power conversion efficiencies of 1-2% under AM 1.5 illumination after the nanowires are infiltrated with redox electrolyte. We do not use a secondary metal wire (e.g. Pt) as in conventional fiber-shaped devices, instead, the end part of the CNT film is condensed into a conductive yarn to serve as the secondary electrode. In addition, our CdSe nanowire-based photoelectrochemical fiber solar cells maintain good flexibility and stable performance upon rotation and bending to large angles.

  8. Temperature dependent magnetization in Co-base nanowire arrays: Role of crystalline anisotropy

    NASA Astrophysics Data System (ADS)

    Vivas, L. G.; Vázquez, M.; Vega, V.; García, J.; Rosa, W. O.; del Real, R. P.; Prida, V. M.

    2012-04-01

    Co, Co(1-x)Pdx, and Co(1-y)Niy nanowire arrays have been prepared by electrochemical template-assisted growth. Hcp, fcc or both phases are detected in Co nanowires depending on their length (300 nm to 40 μm) and on the content of Pd (0 ≤ x ≤ 0.4) and Ni (0 ≤ y ≤ 0.8). Their magnetic behavior has been studied under longitudinal and perpendicular applied fields. The effective magnetic anisotropy is mostly determined by the balance between the shape and the crystalline terms, the latter depending on the fractional volume of hcp phase with strong perpendicular anisotropy and fcc phase with weaker longitudinal anisotropy. The temperature dependence of remanence and coercivity and the eventual observation of compensation temperature is interpreted as due to the different temperature dependence of shape and hcp crystalline anisotropy. Optimum longitudinal magnetic anisotropy is achieved in low Pd-content CoPd nanowires and in short Co nanowires.

  9. A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Horansky, R.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Marsili, F.; Stern, J. A.; Shaw, M. D.

    2014-02-03

    We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 × 2 array.

  10. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

    NASA Astrophysics Data System (ADS)

    Guerrera, S. A.; Akinwande, A. I.

    2016-07-01

    We developed a fabrication process for embedding a dense array (108 cm-2) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm-2), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).

  11. On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation

    NASA Astrophysics Data System (ADS)

    Cao, Huaxiang; Li, Xinhua; Zhou, Bukang; Chen, Tao; Shi, Tongfei; Zheng, Jianqiang; Liu, Guangqiang; Wang, Yuqi

    2017-02-01

    We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO2 composite NW arrays with controllable geometry are obtained.

  12. On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation.

    PubMed

    Cao, Huaxiang; Li, Xinhua; Zhou, Bukang; Chen, Tao; Shi, Tongfei; Zheng, Jianqiang; Liu, Guangqiang; Wang, Yuqi

    2017-12-01

    We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO2 composite NW arrays with controllable geometry are obtained.

  13. Stabilization mechanisms for information stored in magnetic nanowire arrays

    NASA Astrophysics Data System (ADS)

    Cisternas, Eduardo; Faúndez, Julián; Vogel, Eugenio E.

    2017-03-01

    The durability of the stored information in magnetic systems is one important feature in firmware applications such as security codes, magnetic keys and other similar products. In the present paper we discuss two different ways of preserving patterns in the set of magnetic wires trapped in the porous membranes used to produce them. One of the techniques is the inscription of an opposite magnetic band of about 1/3 the width of the stored pattern which minimizes the repulsive energy among the ferromagnetic cylinders still leaving a potent magnetic signal to be read. The other technique makes use of segmented nanowires which present a competition of repulsive energy of segments within the same layer while the interaction is attractive with the closer segments of the other layer; such a competition can lead to stabilization if the geometrical parameters are properly controlled. The first technique is cheaper and faster to implement, while the second technique needs a more complete fabrication process but can lead to more durable stored information.

  14. Controlled Growth of Platinum Nanowire Arrays on Sulfur Doped Graphene as High Performance Electrocatalyst

    PubMed Central

    Wang, Rongyue; Higgins, Drew C.; Hoque, Md Ariful; Lee, DongUn; Hassan, Fathy; Chen, Zhongwei

    2013-01-01

    Graphene supported Pt nanostructures have great potential to be used as catalysts in electrochemical energy conversion and storage technologies; however the simultaneous control of Pt morphology and dispersion, along with ideally tailoring the physical properties of the catalyst support properties has proven very challenging. Using sulfur doped graphene (SG) as a support material, the heterogeneous dopant atoms could serve as nucleation sites allowing for the preparation of SG supported Pt nanowire arrays with ultra-thin diameters (2–5 nm) and dense surface coverage. Detailed investigation of the preparation technique reveals that the structure of the resulting composite could be readily controlled by fine tuning the Pt nanowire nucleation and growth reaction kinetics and the Pt-support interactions, whereby a mechanistic platinum nanowire array growth model is proposed. Electrochemical characterization demonstrates that the composite materials have 2–3 times higher catalytic activities toward the oxygen reduction and methanol oxidation reaction compared with commercial Pt/C catalyst. PMID:23942256

  15. Ultra-dense silicon nanowire array solar cells by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, Alexander; Pacifici, Domenico; Ha, Jong-Yoon; Krylyuk, Sergiy; Davydov, Albert

    Nanowire (NW) solar cells have been attracting increasing interest due to their potentially superior light absorption compared to thin bulk films. In order to improve light trapping, we have used nanoimprint lithography (NIL) to fabricate high-density NW arrays with deep sub-micron pitch (P) and diameter (D). We have grown dense vertical arrays of Si axial p - i - n junction NWs of D = 170 nm and P = 500 nm by vapor-liquid-solid epitaxy on seed arrays produced by NIL. The NWs were 9 µm length long with a 5 µm intrinsic section. The NW arrays were planarized using SU-8 photoresist, followed by reactive ion etching to expose the NW tips. Top n-contact was realized by sputter deposition of a transparent 200 nm IZO layer. The nanoimprinted NW array samples measured under AM 1.5 G illumination showed a peak external quantum efficiency of ~8% and internal quantum efficiency of ~90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying P confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400-650 nm spectral range is predicted for a Si NW array with an even smaller P = 250 nm, significantly outperforming a blanket Si film of the same thickness. Such pitch values are accessible to NIL and work on such arrays is in progress. National Science Foundation.

  16. High Density n-Si/n-TiO2 Core/Shell Nanowire Arrays with Enhanced Photoactivity

    SciTech Connect

    Hwang, Yun Jeong; Boukai, Akram; Yang, Peidong

    2008-11-15

    There are currently great needs to develop low-cost inorganic materials that can efficiently perform solar water splitting as photoelectrolysis of water into hydrogen and oxygen has significant potential to provide clean energy. We investigate the Si/TiO2 nanowire heterostructures to determine their potential for the photooxidation of water. We observed that highly dense Si/TiO2 core/shell nanowire arrays enhanced the photocurrent by 2.5 times compared to planar Si/TiO2 structure due to their low reflectance and high surface area. We also showed that n-Si/n-TiO2 nanowire arrays exhibited a larger photocurrent and open circuit voltage than p-Si/n-TiO2 nanowires due to a barrier at the heterojunction.

  17. Enhancing absorption in coated semiconductor nanowire/nanorod core-shell arrays using active host matrices

    NASA Astrophysics Data System (ADS)

    Jule, Leta; Dejene, Francis; Roro, Kittessa

    2016-12-01

    In the present work, we investigated theoretically and experimentally the interaction of radiation field phenomena interacting with arrays of nanowire/nanorod core-shell embedded in active host matrices. The optical properties of composites are explored including the case when the absorption of propagating wave by dissipative component is completely compensated by amplification in active (lasing) medium. On the basis of more elaborated modeling approach and extended effective medium theory, the effective polarizability and the refractive index of electromagnetic mode dispersion of the core-shell nanowire arrays are derived. ZnS(shell)-coated by sulphidation process on ZnO(shell) nanorod arrays grown on (100) silicon substrate by chemical bath deposition (CBD) has been used for theoretical comparison. Compared with the bare ZnO nanorods, ZnS-coated core/shell nanorods exhibit a strongly reduced ultraviolet (UV) emission and a dramatically enhanced deep level (DL) emission. Obviously, the UV and DL emission peaks are attributed to the emissions of ZnO nanorods within ZnO/ZnS core/shell nanorods. The reduction of UV emission after ZnS coating seems to agree with the charge separation mechanism of type-II band alignment that holes transfer from the core to shell, which would quench the UV emission to a certain extent. Our theoretical calculations and numerical simulation demonstrate that the use of active host (amplifying) medium to compensate absorption at metallic inclusions. Moreover the core-shell nanorod/nanowire arrays create the opportunity for broad band absorption and light harvesting applications.

  18. Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.

    PubMed

    Mu, Zhiqiang; Yu, Haochi; Zhang, Miao; Wu, Aimin; Qi, Gongmin; Chu, Paul K; An, Zhenghua; Di, Zengfeng; Wang, Xi

    2017-03-08

    Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

  19. Plasmon-Enhanced Light Absorption in GaAs Nanowire Array Solar Cells.

    PubMed

    Li, Yanhong; Yan, Xin; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2015-12-01

    In this paper, we propose a plasmon-enhanced solar cell structure based on a GaAs nanowire array decorated with metal nanoparticles. The results show that by engineering the metallic nanoparticles, localized surface plasmon could be excited, which can concentrate the incident light and propagate the energy to nanowires. The surface plasmon can dramatically enhance the absorbance of near-bandgap light, and the enhancement is influenced by the size and material of nanoparticles. By optimizing the particle parameters, a large absorbance enhancement of 50 % at 760 nm and a high conversion efficiency of 14.5 % can be obtained at a low diameter and period ratio (D/P ratio) of 0.3. The structure is promising for low-cost high-performance nanoscale solar cells.

  20. Plasmon-Enhanced Light Absorption in GaAs Nanowire Array Solar Cells

    NASA Astrophysics Data System (ADS)

    Li, Yanhong; Yan, Xin; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2015-11-01

    In this paper, we propose a plasmon-enhanced solar cell structure based on a GaAs nanowire array decorated with metal nanoparticles. The results show that by engineering the metallic nanoparticles, localized surface plasmon could be excited, which can concentrate the incident light and propagate the energy to nanowires. The surface plasmon can dramatically enhance the absorbance of near-bandgap light, and the enhancement is influenced by the size and material of nanoparticles. By optimizing the particle parameters, a large absorbance enhancement of 50 % at 760 nm and a high conversion efficiency of 14.5 % can be obtained at a low diameter and period ratio ( D/ P ratio) of 0.3. The structure is promising for low-cost high-performance nanoscale solar cells.

  1. Magnetic force microscopy investigation of arrays of nickel nanowires and nanotubes.

    PubMed

    Tabasum, M R; Zighem, F; De La Torre Medina, J; Encinas, A; Piraux, L; Nysten, B

    2014-06-20

    The magnetic properties of arrays of nanowires (NWs) and nanotubes (NTs), 150 nm in diameter, electrodeposited inside nanoporous polycarbonate membranes are investigated. The comparison of the nanoscopic magnetic force microscopy (MFM) imaging and the macroscopic behavior as measured by alternating gradient force magnetometry (AGFM) is made. It is shown that MFM is a complementary technique that provides an understanding of the magnetization reversal characteristics at the microscopic scale of individual nanostructures. The local hysteresis loops have been extracted by MFM measurements. The influence of the shape of such elongated nanostructures on the dipolar coupling and consequently on the squareness of the hysteresis curves is demonstrated. It is shown that the nanowires exhibit stronger magnetic interactions than nanotubes. The non-uniformity of the magnetization states is also revealed by combining the MFM and AGFM measurements.

  2. Coating and enhanced photocurrent of vertically aligned zinc oxide nanowire arrays with metal sulfide materials.

    PubMed

    Volokh, Michael; Diab, Mahmud; Magen, Osnat; Jen-La Plante, Ilan; Flomin, Kobi; Rukenstein, Pazit; Tessler, Nir; Mokari, Taleb

    2014-08-27

    Hybrid nanostructures combining zinc oxide (ZnO) and a metal sulfide (MS) semiconductor are highly important for energy-related applications. Controlled filling and coating of vertically aligned ZnO nanowire arrays with different MS materials was achieved via the thermal decomposition approach of single-source precursors in the gas phase by using a simple atmospheric-pressure chemical vapor deposition system. Using different precursors allowed us to synthesize multicomponent structures such as nanowires coated with alloy shell or multishell structures. Herein, we present the synthesis and structural characterization of the different structures, as well as an electrochemical characterization and a photovoltaic response of the ZnO-CdS system, in which the resulting photocurrent upon illumination indicates charge separation at the interface.

  3. Vertical nanowire electrode array: a highly scalable platform for intracellular interfacing to neuronal circuits

    NASA Astrophysics Data System (ADS)

    Jorgolli, Marsela; Robinson, Jacob; Shalek, Alex; Yoon, Myung-Han; Gertner, Rona; Park, Hongkun

    2012-02-01

    Interrogation of complex neuronal network requires new experimental tools that are sensitive enough to quantify the strengths of synaptic connections, yet scalable enough to couple to a large number of neurons simultaneously. Here, we will present a new, highly scalable intracellular electrode platform based on vertical nanowires that affords parallel interfacing to multiple mammalian neurons. Specifically, we show that our vertical nanowire electrode arrays can intracellularly record and stimulate neuronal activity in dissociated cultures of rat cortical neurons and be used to map multiple individual synaptic connections. This platform's scalability and full compatibility with silicon nanofabrication techniques provide a clear path toward simultaneous high-fidelity interfacing with hundreds of individual neurons, opening up exciting new avenues for neuronal circuit studies and prosthetics.

  4. Semiconductor/dielectric half-coaxial nanowire arrays for large-area nanostructured photovoltaics

    NASA Astrophysics Data System (ADS)

    Hua, X.; Zeng, Y.; Shen, W. Z.

    2014-03-01

    We present a simple assembly strategy of single nanowires (NWs) to form half-coaxial nanowire arrays (NWAs) which can be easily realized in large size by standard pattering and deposition techniques. Through the finite-difference time-domain simulation, we show that the proposed half-coaxial NWAs effectively preserve the leaky modes resonances within single NWs and consequently achieve strong absorption enhancement under optimization of various structural factors. The best half-coaxial NWAs with 100 nm thick absorbing shell offer equivalent light absorption of more than 400 nm thick planar film. Benefiting from the >75% cut of the required thickness of the absorbing layer, the performances of the demonstrated half-coaxial NWAs based a-Si thin film solar cell also gain significant improvement.

  5. Copper Antimonide Nanowire Array Lithium Ion Anodes Stabilized by Electrolyte Additives.

    PubMed

    Jackson, Everett D; Prieto, Amy L

    2016-11-09

    Nanowires of electrochemically active electrode materials for lithium ion batteries represent a unique system that allows for intensive investigations of surface phenomena. In particular, highly ordered nanowire arrays produced by electrodeposition into anodic aluminum oxide templates can lead to new insights into a material's electrochemical performance by providing a high-surface-area electrode with negligible volume expansion induced pulverization. Here we show that for the Li-CuxSb ternary system, stabilizing the surface chemistry is the most critical factor for promoting long electrode life. The resulting solid electrolyte interphase is analyzed using a mix of electron microscopy, X-ray photoelectron spectroscopy, and lithium ion battery half-cell testing to provide a better understanding of the importance of electrolyte composition on this multicomponent alloy anode material.

  6. Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array

    NASA Astrophysics Data System (ADS)

    Lee, Jaehyung; Hong, Min-Ho; Han, Sanghun; Na, Jukwan; Kim, Ilsoo; Kwon, Yong-Joon; Lim, Yong-beom; Choi, Heon-Jin

    2016-07-01

    In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes.

  7. Combined flame and electrodeposition synthesis of energetic coaxial tungsten-oxide/aluminum nanowire arrays.

    PubMed

    Dong, Zhizhong; Al-Sharab, Jafar F; Kear, Bernard H; Tse, Stephen D

    2013-09-11

    A nanostructured thermite composite comprising an array of tungsten-oxide (WO2.9) nanowires (diameters of 20-50 nm and lengths of >10 μm) coated with single-crystal aluminum (thickness of ~16 nm) has been fabricated. The method involves combined flame synthesis of tungsten-oxide nanowires and ionic-liquid electrodeposition of aluminum. The geometry not only presents an avenue to tailor heat-release characteristics due to anisotropic arrangement of fuel and oxidizer but also eliminates or minimizes the presence of an interfacial Al2O3 passivation layer. Upon ignition, the energetic nanocomposite exhibits strong exothermicity, thereby being useful for fundamental study of aluminothermic reactions as well as enhancing combustion characteristics.

  8. Polyaniline nanowire arrays aligned on nitrogen-doped carbon fabric for high-performance flexible supercapacitors.

    PubMed

    Yu, Pingping; Li, Yingzhi; Yu, Xinyi; Zhao, Xin; Wu, Lihao; Zhang, Qinghua

    2013-09-24

    A combination of vertical polyaniline (PANI) nanowire arrays and nitrogen plasma etched carbon fiber cloths (eCFC) was fabricated to create 3D nanostructured PANI/eCFC composites. The small size of the highly ordered PANI nanowires can greatly reduce the scale of the diffusion length, allowing for the improved utilization of electrode materials. A two-electrode flexible supercapacitor based on PANI/eCFC demonstrates a high specific capacitance (1035 F g(-1) at a current density of 1 A g(-1)), good rate capability (88% capacity retention at 8 A g(-1)), and long-term cycle life (10% capacity loss after 5000 cycles). The lightweight, low-cost, flexible composites are promising candidates for use in energy storage device applications.

  9. Design for strong absorption in a nanowire array tandem solar cell

    PubMed Central

    Chen, Yang; Pistol, Mats-Erik; Anttu, Nicklas

    2016-01-01

    Semiconductor nanowires are a promising candidate for next-generation solar cells. However, the optical response of nanowires is, due to diffraction effects, complicated to optimize. Here, we optimize through optical modeling the absorption in a dual-junction nanowire-array solar cell in terms of the Shockley-Quessier detailed balance efficiency limit. We identify efficiency maxima that originate from resonant absorption of photons through the HE11 and the HE12 waveguide modes in the top cell. An efficiency limit above 40% is reached in the band gap optimized Al0.10Ga0.90As/In0.34Ga0.66As system when we allow for different diameter for the top and the bottom nanowire subcell. However, for experiments, equal diameter for the top and the bottom cell might be easier to realize. In this case, we find in our modeling a modest 1–2% drop in the efficiency limit. In the Ga0.51In0.49P/InP system, an efficiency limit of η = 37.3% could be reached. These efficiencies, which include reflection losses and sub-optimal absorption, are well above the 31.0% limit of a perfectly-absorbing, idealized single-junction bulk cell, and close to the 42.0% limit of the idealized dual-junction bulk cell. Our results offer guidance in the choice of materials and dimensions for nanowires with potential for high efficiency tandem solar cells. PMID:27574019

  10. Design for strong absorption in a nanowire array tandem solar cell

    NASA Astrophysics Data System (ADS)

    Chen, Yang; Pistol, Mats-Erik; Anttu, Nicklas

    2016-08-01

    Semiconductor nanowires are a promising candidate for next-generation solar cells. However, the optical response of nanowires is, due to diffraction effects, complicated to optimize. Here, we optimize through optical modeling the absorption in a dual-junction nanowire-array solar cell in terms of the Shockley-Quessier detailed balance efficiency limit. We identify efficiency maxima that originate from resonant absorption of photons through the HE11 and the HE12 waveguide modes in the top cell. An efficiency limit above 40% is reached in the band gap optimized Al0.10Ga0.90As/In0.34Ga0.66As system when we allow for different diameter for the top and the bottom nanowire subcell. However, for experiments, equal diameter for the top and the bottom cell might be easier to realize. In this case, we find in our modeling a modest 1–2% drop in the efficiency limit. In the Ga0.51In0.49P/InP system, an efficiency limit of η = 37.3% could be reached. These efficiencies, which include reflection losses and sub-optimal absorption, are well above the 31.0% limit of a perfectly-absorbing, idealized single-junction bulk cell, and close to the 42.0% limit of the idealized dual-junction bulk cell. Our results offer guidance in the choice of materials and dimensions for nanowires with potential for high efficiency tandem solar cells.

  11. Design for strong absorption in a nanowire array tandem solar cell.

    PubMed

    Chen, Yang; Pistol, Mats-Erik; Anttu, Nicklas

    2016-08-30

    Semiconductor nanowires are a promising candidate for next-generation solar cells. However, the optical response of nanowires is, due to diffraction effects, complicated to optimize. Here, we optimize through optical modeling the absorption in a dual-junction nanowire-array solar cell in terms of the Shockley-Quessier detailed balance efficiency limit. We identify efficiency maxima that originate from resonant absorption of photons through the HE11 and the HE12 waveguide modes in the top cell. An efficiency limit above 40% is reached in the band gap optimized Al0.10Ga0.90As/In0.34Ga0.66As system when we allow for different diameter for the top and the bottom nanowire subcell. However, for experiments, equal diameter for the top and the bottom cell might be easier to realize. In this case, we find in our modeling a modest 1-2% drop in the efficiency limit. In the Ga0.51In0.49P/InP system, an efficiency limit of η = 37.3% could be reached. These efficiencies, which include reflection losses and sub-optimal absorption, are well above the 31.0% limit of a perfectly-absorbing, idealized single-junction bulk cell, and close to the 42.0% limit of the idealized dual-junction bulk cell. Our results offer guidance in the choice of materials and dimensions for nanowires with potential for high efficiency tandem solar cells.

  12. Nanowire-organic thin film transistor integration and scale up towards developing sensor array for biomedical sensing applications

    NASA Astrophysics Data System (ADS)

    Kumar, Prashanth S.; Hankins, Phillip T.; Rai, Pratyush; Varadan, Vijay K.

    2010-04-01

    Exploratory research works have demonstrated the capability of conducting nanowire arrays in enhancing the sensitivity and selectivity of bio-electrodes in sensing applications. With the help of different surface manipulation techniques, a wide range of biomolecules have been successfully immobilized on these nanowires. Flexible organic electronics, thin film transistor (TFT) fabricated on flexible substrate, was a breakthrough that enabled development of logic circuits on flexible substrate. In many health monitoring scenarios, a series of biomarkers, physical properties and vital signals need to be observed. Since the nano-bio-electrodes are capable of measuring all or most of them, it has been aptly suggested that a series of electrode (array) on single substrate shall be an excellent point of care tool. This requires an efficient control system for signal acquisition and telemetry. An array of flexible TFTs has been designed that acts as active matrix for controlled switching of or scanning by the sensor array. This array is a scale up of the flexible organic TFT that has been fabricated and rigorously tested in previous studies. The integration of nanowire electrodes to the organic electronics was approached by growing nanowires on the same substrate as TFTs and fl ip chip packaging, where the nanowires and TFTs are made on separate substrates. As a proof of concept, its application has been explored in various multi-focal biomedical sensing applications, such as neural probes for monitoring neurite growth, dopamine, and neuron activity; myocardial ischemia for spatial monitoring of myocardium.

  13. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    PubMed

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  14. Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays

    SciTech Connect

    Cui, J.B.; Gibson, U.J.

    2005-09-26

    Cobalt and nickel doped ZnO nanowire arrays were synthesized by an electrochemical process at a temperature of 90 deg. C. Energy dispersive x-ray spectroscopy and x-ray diffraction show that the dopants are incorporated into the wurtzite-structure ZnO. Anisotropic ferromagnetism with an easy direction of magnetization either perpendicular or parallel to the wire axis, depending on the wire geometry and density, was observed in 1.7% Co and 2.2% Ni-doped ZnO nanowires at room temperature. The anisotropic magnetism was explained in terms of a competition between self-demagnetization and magnetostatic coupling among the nanowires.

  15. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    NASA Astrophysics Data System (ADS)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  16. Fabrication of Bi Nanowire Array into Nanoporous Film Made from Phase-Separated Al-Si Film

    NASA Astrophysics Data System (ADS)

    Fukutani, Kazuhiko; Den, Tohru

    2008-04-01

    Ultrahigh-pore-density nanoporous films with a pore diameter less than 10 nm and a pore density exceeding 1016 pores/m2 have been fabricated by the phase separation of an Al-Si system and the subsequent removal of Al cylinders, for use in the template-assisted growth of Bi nanowire arrays. Bi was used to fill the pores of template films by electrodeposition. The temperature dependence of the resistance of the obtained Bi nanowires with a diameter of 9 nm, parallel to the Bi nanowire growth direction, exhibits a semimetal-to-semiconductor transition due to the quantum confinement effect.

  17. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: The effect of substrate on magnetic properties of Co/Cu multilayer nanowire arrays

    NASA Astrophysics Data System (ADS)

    Ren, Yong; Wang, Jian-Bo; Liu, Qing-Fang; Han, Xiang-Hua; Xue, De-Sheng

    2009-08-01

    Ordered Co/Cu multilayer nanowire arrays have been fabricated into anodic aluminium oxide templates with Ag and Cu substrate by direct current electrodeposition. This paper studies the morphology, structure and magnetic properties by transmission electron microscopy, selective area electron diffraction, x-ray diffraction, and vibrating sample magnetometer. X-ray diffraction patterns reveal that both as-deposited nanowire arrays films exhibit face-centred cubic structure. Magnetic measurements indicate that the easy magnetization direction of Co/Cu multilayer nanowire arrays films on Ag substrate is perpendicular to the long axis of nanowire, whereas the easy magnetization direction of the sample with Cu substrate is parallel to the long axis of nanowire. The change of easy magnetization direction attributed to different substrates, and the magnetic properties of the nanowire arrays are discussed.

  18. The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate.

    PubMed

    Zhukov, A A; Volk, C; Winden, A; Hardtdegen, H; Schäpers, T

    2014-04-23

    We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire (R(wire) ∼ 30 kΩ) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasi-periodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of electrons in the conductive band of the wire.

  19. Solid-phase crystallization of amorphous silicon nanowire array and optical properties

    NASA Astrophysics Data System (ADS)

    Ishikawa, Ryousuke; Kato, Shinya; Yamazaki, Tatsuya; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-02-01

    An amorphous silicon nanowire (a-SiNW) array perpendicular to a glass substrate can be successfully obtained through the metal-assisted chemical etching of amorphous silicon (a-Si) thin films. The solid-phase crystallization of a-SiNWs was carried out by thermal annealing in a forming gas in the temperature range from 600 to 900 °C. The effects of hydrogen in the film and the film morphology on the crystallization of a-SiNWs were investigated by Raman spectroscopy and transmission electron microscopy. A higher hydrogen concentration of a-SiNWs reduced the crystallization temperature, as in a-Si thin films. It was also revealed that the large surface area of the a-SiNW array affected the crystallization process. We also studied the optical property of the fabricated SiNW array and demonstrated its high potential as an active layer in solar cells.

  20. Broadband light absorption of silicon nanowires embedded in Ag nano-hole arrays

    NASA Astrophysics Data System (ADS)

    Rao, Lei; Ji, Chun-Lei; Li, Ming

    2016-09-01

    Silicon nanowires (SiNWs) embedded in Ag nano-hole arrays with broadband light absorption is proposed in this paper. Finite Difference Time Domain (FDTD) simulations were utilized to obtain absorptivity and band diagrams for both SiNWs and SiNWs embedded in Ag nano-hole arrays. A direct relationship between waveguide modes and extraordinary absorptivity is established qualitatively, which helps to optimal design the structure parameters to achieve broadband absorptivity. After introducing Ag nano-hole arrays at the rear side of SiNWs, the band modes are extended into leaky regions and light energy can be fully absorbed, resulting in high absorptivity at long wavelength. Severe reflection is also suppressed by light trapping capability of SiNWs at short wavelength. Over 70% average absorptivity from 400 nm to 1100 nm is realized finally. This kinds of design give promising route for high efficiency solar cells and optical absorbers.

  1. Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

    SciTech Connect

    Gotschke, T.; Schumann, T.; Limbach, F.; Calarco, R.; Stoica, T.

    2011-03-07

    Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d{sub h}) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d{sub h} and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

  2. Magnetic properties of planar nanowire arrays of Co fabricated on oxidized step-bunched silicon templates.

    PubMed

    Arora, S K; O'Dowd, B J; Ballesteros, B; Gambardella, P; Shvets, I V

    2012-06-15

    Planar nanowire (NW) arrays of Co grown on oxidized step-bunched Si(111) templates exhibit room temperature ferromagnetic behaviour for wire widths down to 25 nm. Temperature and thickness dependent magnetization studies on these polycrystalline NW arrays show that the magnetic anisotropy of the NW array is dominated by shape anisotropy, which keeps the magnetization in-plane with easy axis parallel to the wires. This shape related uniaxial anisotropy is preserved even at low temperatures (10 K). Thickness dependent studies reveal that the magnetization reversal is governed by the curling mode reversal for thick wires whereas thinner wires exhibit a more complex behaviour which is related to thermal effects and size distribution of the crystal grains that constitute the NWs.

  3. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

    PubMed

    Hou, Jared J; Han, Ning; Wang, Fengyun; Xiu, Fei; Yip, Senpo; Hui, Alvin T; Hung, TakFu; Ho, Johnny C

    2012-04-24

    InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO(2)/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I(ON)/I(OFF) ratio >10(5), field-effect mobility of ∼2700 cm(2)/(V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.

  4. Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application.

    PubMed

    Li, Dingguo; Yan, Xiaolan; Lin, Chunhua; Huang, Shengli; Tian, Z Ryan; He, Bing; Yang, Qianqian; Yu, Binbin; He, Xu; Li, Jing; Wang, Jiayuan; Zhan, Huahan; Li, Shuping; Kang, Junyong

    2017-12-01

    ZnO/Si nanowire arrays with hierarchical architecture were synthesized by solution method with ZnO seed layer grown by atomic layer deposition and magnetron sputtering, respectively. The photocatalytic activity of the as-grown tree-like arrays was evaluated by the degradation of methylene blue under ultraviolet light at ambient temperature. The comparison of morphology, crystal structure, optical properties, and photocatalysis efficiency of the two samples in different seeding processes was conducted. It was found that the ZnO/Si nanowire arrays presented a larger surface area with better crystalline and more uniform ZnO branches on the whole sidewall of Si backbones for the seed layer by atomic layer deposition, which gained a strong light absorption as high as 98% in the ultraviolet and visible range. The samples were proven to have a potential use in photocatalyst, but suffered from photodissolution and memory effect. The mechanism of the photocatalysis was analyzed, and the stability and recycling ability were also evaluated and enhanced.

  5. Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application

    NASA Astrophysics Data System (ADS)

    Li, Dingguo; Yan, Xiaolan; Lin, Chunhua; Huang, Shengli; Tian, Z. Ryan; He, Bing; Yang, Qianqian; Yu, Binbin; He, Xu; Li, Jing; Wang, Jiayuan; Zhan, Huahan; Li, Shuping; Kang, Junyong

    2017-01-01

    ZnO/Si nanowire arrays with hierarchical architecture were synthesized by solution method with ZnO seed layer grown by atomic layer deposition and magnetron sputtering, respectively. The photocatalytic activity of the as-grown tree-like arrays was evaluated by the degradation of methylene blue under ultraviolet light at ambient temperature. The comparison of morphology, crystal structure, optical properties, and photocatalysis efficiency of the two samples in different seeding processes was conducted. It was found that the ZnO/Si nanowire arrays presented a larger surface area with better crystalline and more uniform ZnO branches on the whole sidewall of Si backbones for the seed layer by atomic layer deposition, which gained a strong light absorption as high as 98% in the ultraviolet and visible range. The samples were proven to have a potential use in photocatalyst, but suffered from photodissolution and memory effect. The mechanism of the photocatalysis was analyzed, and the stability and recycling ability were also evaluated and enhanced.

  6. Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

    PubMed

    Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig

    2012-01-01

    Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.

  7. N-doped carbon-coated tungsten oxynitride nanowire arrays for highly efficient electrochemical hydrogen evolution.

    PubMed

    Li, Qun; Cui, Wei; Tian, Jingqi; Xing, Zhicai; Liu, Qian; Xing, Wei; Asiri, Abdullah M; Sun, Xuping

    2015-08-10

    It is highly desired but still challenging to develop active nonprecious metal hydrogen evolution reaction (HER) electrocatalysts operating under all pH conditions. Herein, the development of three-dimensional N-doped carbon-coated tungsten oxynitride nanowire arrays on carbon cloth as a highly efficient and durable HER cathode was explored. The material delivers current densities of 10 and 100 mA cm(-2) at overpotentials of 106 and 172 mV, respectively, in acidic medium, and it also performs well in neutral and basic electrolytes.

  8. Vapor detection performance of vertically aligned, ordered arrays of silicon nanowires with a porous electrode.

    PubMed

    Field, Christopher R; In, Hyun Jin; Begue, Nathan J; Pehrsson, Pehr E

    2011-06-15

    Vertically aligned, ordered arrays of silicon nanowires capped with a porous top electrode are used to detect gas phase ammonia and nitrogen dioxide in humidified air. The sensors had very fast response times and large signal-to-noise ratios. Calibration curves were created using both an initial slope method and a fixed-time point method. The initial-slope method had a power law dependence that correlates well with concentration, demonstrating a viable alternative for eventual quantitative vapor detection and enabling shorter sampling and regeneration times.

  9. Enhanced optical properties in inclined GaAs nanowire arrays for high-efficiency solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Yile; Zhang, Xu; Sun, Xiaohong; Qi, Yongle; Wang, Zhen; Wang, Hua

    2016-11-01

    The inclined Gallium Arsenide (GaAs) nanowire arrays (NWAs) as light absorbing structures for solar photovoltaics are proposed. The influence of geometric parameters on the optical absorption properties is systematically investigated, and the optimal geometric parameters of the proposed structure are determined by using rigorous coupled wave analysis (RCWA) and the finite element method. It is found that the absorption efficiency of the optimized structure can be improved significantly compared with vertical NWAs and thin film layer structure. The optimized structure yields a photocurrent of 30.3 mA/cm2, which is much higher than that of vertical NWAs and thin film layer with the same geometric configurations.

  10. A palladium-nanoparticle and silicon-nanowire-array hybrid: a platform for catalytic heterogeneous reactions.

    PubMed

    Yamada, Yoichi M A; Yuyama, Yoshinari; Sato, Takuma; Fujikawa, Shigenori; Uozumi, Yasuhiro

    2014-01-03

    We report the development of a silicon nanowire array-stabilized palladium nanoparticle catalyst, SiNA-Pd. Its use in the palladium-catalyzed Mizoroki-Heck reaction, the hydrogenation of an alkene, the hydrogenolysis of nitrobenzene, the hydrosilylation of an α,β-unsaturated ketone, and the C-H bond functionalization reactions of thiophenes and indoles achieved a quantitative production with high reusability. The catalytic activity reached several hundred-mol ppb of palladium, reaching a TON of 2 000 000.

  11. Design and simulation of temperature-insensitive arrayed waveguide gratings based on silicon nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Yan; Lang, Tingting; Zou, Jun; He, J.-J.

    2011-12-01

    The design and simulation results of temperature-insensitive arrayed waveguide gratings based on silicon nanowires are presented. The temperature dependent wavelength shift is minimized by using negative thermo-optic coefficient material SU-8 as the upper-cladding. Simulation results show that by using an appropriate thickness and width of the waveguide, quasi-athermal operation can be achieved. For temperature varying from 0°C to 80°C, the TD-CWS can be controlled down to 0.036nm with little polarization dependence for 272nm×253nm waveguide.

  12. Ternary core/shell structure of Co3O4/NiO/C nanowire arrays as high-performance anode material for Li-ion battery

    NASA Astrophysics Data System (ADS)

    Wu, J. B.; Guo, R. Q.; Huang, X. H.; Lin, Y.

    2014-02-01

    Self-supported core/shell nanowire arrays are highly desirable for designing high-performance electrochemical energy storage devices. Herein, we report self-supported ternary core/shell nanowire arrays of Co3O4/NiO/C on the nickel foam with the help of hydrothermal synthesis, chemical bath deposition and annealing carbonation methods. As an anode material for lithium ion batteries, the Co3O4/NiO/C core/shell nanowire arrays exhibit excellent electrochemical performances with lower polarization, higher capacity, improved cycle life and better high-rate capability than the pure Co3O4 nanowire arrays and single NiO nanoflake arrays. The enhanced electrochemical properties are mainly ascribed to the core/shell nanowire architecture with potential synergistic contribution such as improved mechanical stability and enhanced conductivity as well as faster ion/electron transfer.

  13. From immobilized cells to motile cells on a bed-of-nails: effects of vertical nanowire array density on cell behaviour

    PubMed Central

    Persson, Henrik; Li, Zhen; Tegenfeldt, Jonas O.; Oredsson, Stina; Prinz, Christelle N.

    2015-01-01

    The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density on cell migration, division and morphology for murine fibroblasts. Our results show that few nanowires are sufficient to immobilize cells, while a high nanowire spatial density enables a ”bed-of-nails” regime, where cells reside on top of the nanowires and are fully motile. The presence of nanowires decreases the cell proliferation rate, even in the “bed-of-nails” regime. We show that the cell morphology strongly depends on the nanowire density. Cells cultured on low (0.1 μm−2) and medium (1 μm−2) density substrates exhibit an increased number of multi-nucleated cells and micronuclei. These were not observed in cells cultured on high nanowire density substrates (4 μm−2). The results offer important guidelines to minimize cell-function perturbations on nanowire arrays. Moreover, these findings offer the possibility to tune cell proliferation and migration independently by adjusting the nanowire density, which may have applications in drug testing. PMID:26691936

  14. From immobilized cells to motile cells on a bed-of-nails: effects of vertical nanowire array density on cell behaviour.

    PubMed

    Persson, Henrik; Li, Zhen; Tegenfeldt, Jonas O; Oredsson, Stina; Prinz, Christelle N

    2015-12-22

    The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density on cell migration, division and morphology for murine fibroblasts. Our results show that few nanowires are sufficient to immobilize cells, while a high nanowire spatial density enables a "bed-of-nails" regime, where cells reside on top of the nanowires and are fully motile. The presence of nanowires decreases the cell proliferation rate, even in the "bed-of-nails" regime. We show that the cell morphology strongly depends on the nanowire density. Cells cultured on low (0.1 μm(-2)) and medium (1 μm(-2)) density substrates exhibit an increased number of multi-nucleated cells and micronuclei. These were not observed in cells cultured on high nanowire density substrates (4 μm(-2)). The results offer important guidelines to minimize cell-function perturbations on nanowire arrays. Moreover, these findings offer the possibility to tune cell proliferation and migration independently by adjusting the nanowire density, which may have applications in drug testing.

  15. From immobilized cells to motile cells on a bed-of-nails: effects of vertical nanowire array density on cell behaviour

    NASA Astrophysics Data System (ADS)

    Persson, Henrik; Li, Zhen; Tegenfeldt, Jonas O.; Oredsson, Stina; Prinz, Christelle N.

    2015-12-01

    The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density on cell migration, division and morphology for murine fibroblasts. Our results show that few nanowires are sufficient to immobilize cells, while a high nanowire spatial density enables a ”bed-of-nails” regime, where cells reside on top of the nanowires and are fully motile. The presence of nanowires decreases the cell proliferation rate, even in the “bed-of-nails” regime. We show that the cell morphology strongly depends on the nanowire density. Cells cultured on low (0.1 μm-2) and medium (1 μm-2) density substrates exhibit an increased number of multi-nucleated cells and micronuclei. These were not observed in cells cultured on high nanowire density substrates (4 μm-2). The results offer important guidelines to minimize cell-function perturbations on nanowire arrays. Moreover, these findings offer the possibility to tune cell proliferation and migration independently by adjusting the nanowire density, which may have applications in drug testing.

  16. Large area metal nanowire arrays with tunable sub-20 nm nanogaps.

    PubMed

    Le Thi Ngoc, Loan; Jin, Mingliang; Wiedemair, Justyna; van den Berg, Albert; Carlen, Edwin T

    2013-06-25

    We report a new top-down nanofabrication technology to realize large area metal nanowire (m-NW) arrays with tunable sub-20 nm separation nanogaps without the use of chemical etching or milling of the metal layer. The m-NW array nanofabrication technology is based on a self-regulating metal deposition process that is facilitated by closely spaced and isolated heterogeneous template surfaces that confine the metal deposition into two dimensions, and therefore, electrically isolated parallel arrays of m-NW can be realized with uniform and controllable nanogaps. Au-NW and Ag-NW arrays are presented with high-density ~10(5) NWs cm(-1), variable NW diameters down to ~50 nm, variable nanogaps down to ~5 nm, and very large nanogap length density ~1 km cm(-2). The m-NW arrays are designed and implemented as interdigitated nanoelectrodes for electrochemical applications and as plasmonic substrates where the coupled-mode localized surface plasmon resonance (LSPR) wavelength in the nanogaps between adjacent m-NW dimers can be precisely tuned to match any excitation source in the range from 500 to 1000 nm, thus providing optimal local electromagnetic field enhancement. A spatially averaged (n = 2500) surface-enhanced Raman scattering (SERS) analytical enhancement factor of (1.2 ± 0.1) × 10(7) is demonstrated from a benzenethiol monolayer chemisorbed on a Au-NW array substrate with LSPR wavelength matched to a He-Ne laser source.

  17. Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition.

    PubMed

    Kato, Shinya; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Watanabe, Yuya; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, Masaki

    2013-08-23

    To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

  18. Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

    NASA Astrophysics Data System (ADS)

    Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

    2016-08-01

    Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

  19. Tungsten oxide@polypyrrole core-shell nanowire arrays as novel negative electrodes for asymmetric supercapacitors.

    PubMed

    Wang, Fengmei; Zhan, Xueying; Cheng, Zhongzhou; Wang, Zhenxing; Wang, Qisheng; Xu, Kai; Safdar, Muhammad; He, Jun

    2015-02-11

    Among active pseudocapacitive materials, polypyrrole (PPy) is a promising electrode material in electrochemical capacitors. PPy-based materials research has thus far focused on its electrochemical performance as a positive electrode rather than as a negative electrode for asymmetric supercapacitors (ASCs). Here high-performance electrochemical supercapacitors are designed with tungsten oxide@PPy (WO3 @PPy) core-shell nanowire arrays and Co(OH)2 nanowires grown on carbon fibers. The WO3 @PPy core-shell nanowire electrode exhibits a high capacitance (253 mF/cm2) in negative potentials (-1.0-0.0 V). The ASCs packaged with CF-Co(OH)2 as a positive electrode and CF-WO3 @PPy as a negative electrode display a high volumetric capacitance up to 2.865 F/cm3 based on volume of the device, an energy density of 1.02 mWh/cm3 , and very good stability performance. These findings promote the application of PPy-based nanostructures as advanced negative electrodes for ASCs.

  20. Morphology-controlled ZnO nanowire arrays for tailored hybrid composites with high damping.

    PubMed

    Malakooti, Mohammad H; Hwang, Hyun-Sik; Sodano, Henry A

    2015-01-14

    Hybrid fiber reinforced composites using a nanoscale reinforcement of the interface have not reached their optimal performance in practical applications due to their complex design and the challenging assembly of their multiscale components. One promising approach to the fabrication of hybrid composites is the growth of zinc oxide (ZnO) nanowire arrays on the surface of carbon fibers to provide improved interfacial strength and out of plane reinforcement. However, this approach has been demonstrated mainly on fibers and thus still requires complex processing conditions. Here we demonstrate a simple approach to the fabrication of such composites through the growth of the nanowires on the fabric. The fabricated composites with nanostructured graded interphase not only exhibit remarkable damping enhancement but also stiffness improvement. It is demonstrated that these two extremely important properties of the composite can be controlled by tuning the morphology of the ZnO nanowires at the interface. Higher damping and flexural rigidity of these composites over traditional ones offer practical high-performance composites.

  1. Magnetic behavior of NiCu nanowire arrays: Compositional, geometry and temperature dependence

    SciTech Connect

    Palmero, E. M. Bran, C.; Real, R. P. del; Vázquez, M.; Magén, C.

    2014-07-21

    Arrays of Ni{sub 100−x}Cu{sub x} nanowires ranging in composition 0 ≤ x ≤ 75, diameter from 35 to 80 nm, and length from 150 nm to 28 μm have been fabricated by electrochemical co-deposition of Ni and Cu into self-ordered anodic aluminum oxide membranes. As determined by X-ray diffraction and Transmission Electron Microscopy, the crystalline structure shows fcc cubic symmetry with [111] preferred texture and preferential Ni or Cu lattice depending on the composition. Their magnetic properties such as coercivity and squareness have been determined as a function of composition and geometry in a Vibrating Sample Magnetometer in the temperature range from 10 to 290 K for applied magnetic fields parallel and perpendicular to the nanowires axis. Addition of Cu into the NiCu alloy up to 50% enhances both parallel coercivity and squareness. For the higher Cu content, these properties decrease and the magnetization easy axis becomes oriented perpendicular to the wires. In addition, coercivity and squareness increase by decreasing the diameter of nanowires which is ascribed to the increase of shape anisotropy. The temperature dependent measurements reflect a complex behavior of the magnetic anisotropy as a result of energy contributions with different evolution with temperature.

  2. A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon

    NASA Astrophysics Data System (ADS)

    Stark, E.; Frost, T.; Jahangir, S.; Hazari, A.; Deshpande, S.; Bhattacharya, P.

    2015-03-01

    A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by Jth = 1.76 kA/cm2 (green) and 2.94kA/cm2 (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz.

  3. Development of amperometric glucose sensors with heterostructured nanowire arrays for continuous subcutaneous monitoring

    NASA Astrophysics Data System (ADS)

    Deshpande, Devesh C.; Yoon, Hargsoon; Khaing, Aung M.; Varadan, Vijay K.

    2007-04-01

    This research discusses the development of a novel amperometric sensor to detect glucose concentrations in solution without the need for an artificial mediator. Since the intended goal of this research is to develop a glucose sensor to subcutaneously monitor glucose levels in the body, it is important that the sensor does not require a mediator, since such chemicals would prove harmful to the body. Nanowire arrays were used as the sensing electrode in place of planar electrodes to utilize the unique properties of nanostructures. Heterostructured Au/Pt nanowires were used so that the dual roles of covalent immobilization of glucose oxidase and oxidation of hydrogen peroxide could be carried out by the sensing electrode. Glucose oxidase was immobilized on these nanowires using self- assembled monolayers of alkanethiols and using a conducting polypyrrole matrix. Results indicate that the unique structure of the sensing electrode delivers superior performance with regards to sensitivity and response time in the absence of an artificial mediator. The development of such a sensor would assist the treatment of patients in an effective and timely manner. Ongoing efforts will help understand the process fabrication and analysis in detail.

  4. Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors.

    PubMed

    Farrell, Alan C; Senanayake, Pradeep; Meng, Xiao; Hsieh, Nick Y; Huffaker, Diana L

    2017-04-12

    We present the electrical properties of p-n junction photodetectors comprised of vertically oriented p-GaAs nanowire arrays on the n-GaAs substrate. We measure an ideality factor as low as n = 1.0 and a rectification ratio >10(8) across all devices, with some >10(9), comparable to the best GaAs thin film photodetectors. An analysis of the Arrhenius plot of the saturation current yields an activation energy of 690 meV-approximately half the bandgap of GaAs-indicating generation-recombination current from midgap states is the primary contributor to the leakage current at low bias. Using fully three-dimensional electrical simulations, we explain the lack of a recombination current dominated regime at low forward bias, as well as some of the issues related to analysis of the capacitance-voltage characteristics of nanowire devices. This work demonstrates that, through proper design and fabrication, nanowire-based devices can perform as well as their bulk device counterparts.

  5. External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications

    NASA Astrophysics Data System (ADS)

    Shibutani, Hideki; Tomomatsu, Yasunori; Sawado, Yoshinori; Yoshizawa, Katsumi; Asakura, Hideaki; Idris, Nazirul Afham; Tsuda, Hiroyuki

    2015-02-01

    Utilizing T-band (1000 nm to 1260 nm) for optical communications is promising for short reach, and large capacity networks, such as data centers or access networks. It is feasible to use this with low-cost coarse wavelength division multiplexing (WDM). However, a tunable wavelength light source is necessary for such applications. In this paper, we propose a new configuration for an external cavity laser, which uses a silica-based arrayed waveguide grating (AWG) for the wavelength selecting element. The external cavity laser consists of a gain chip with high reflection (HR) and anti-reflection (AR) coated facets, coupling lenses, an AWG with AR/HR coatings, and an output fiber. The AWG has 17 connection ports, which correspond to 17 wavelengths with a channel spacing of 1.67 nm. The width of the connection port waveguides was optimized to achieve high coupling efficiency. The AWG chip size is 15 mm x 30 mm. The active layer in the gain chip has InAs quantum dots. The spontaneous emission 3-dB bandwidth was 48 nm (1108 nm to 1156 nm) when a current of 150 mA was injected into the gain chip. The lasing wavelength of the external cavity laser was successfully tuned from 1129.9 nm to 1154.4 nm by selecting the connection ports of the AWG. The typical threshold current was about 130 mA.

  6. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    SciTech Connect

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  7. Study of the Electrochemical System of Antimony-Tellurium in Dimethyl Sulfoxide for Growth of Nanowire Arrays, and an Innovative Method for Single Nanowire Measurements

    NASA Astrophysics Data System (ADS)

    Kalisman, Philip Taubman

    There is a strong interest in thermoelectric materials for energy production and savings. The properties which are integral to thermoelectric performance are typically linked, typically changing one of these properties for the better will change another for the worse. The intertwined nature of these properties has limited bulk thermoelectrics to low efficiencies, which has curbed their use to only niche applications. There has been theoretical and experimental work which has shown that limiting these materials in one or more dimensions will result in deconvolution of properties. Nanowires of well established thermoelectrics should show impressively high performance. Tellurium is attractive in many fields, including thermoelectrics. Nanowires of tellurium have been grown, but with limited success and with out the ability to dope the tellurium. Working on previous work with other systems, tellurium was studied in dimethyl sulfoxide (DMSO). The electrochemical system of tellurium was found to be quite dierent from its aqueous analog, but through comprehensive cyclic voltammetric study, all events were identified and explained. The binary antimony-tellurium system was also studied, as doping of tellurium is integral for many applications. Cyclic voltammograms of this system were studied, and the insight from these studies was used to grow nanowire arrays. Arrays of tellurium were grown and analysis showed that by using DMSO, antimony doped tellurium nanowire arrays could be grown. Furthermore, analysis showed that the antimony doped tellurium interstitially, resulting in a n-type material. Measurements were also performed on arrays and individual wires. Arrays of 1.15% antimony showed ZT of 0.092, with the low ZT attributed to poor contact methods. Although contacting was an obstacle towards measuring whole arrays, single wire measurements were also performed. Single wire measurements were done by a novel method which allows for easy, reproducible measurements of wire

  8. Facile Synthesis of Vanadium-Doped Ni3S2 Nanowire Arrays as Active Electrocatalyst for Hydrogen Evolution Reaction.

    PubMed

    Qu, Yuanju; Yang, Mingyang; Chai, Jianwei; Tang, Zhe; Shao, Mengmeng; Kwok, Chi Tat; Yang, Ming; Wang, Zhenyu; Chua, Daniel; Wang, Shijie; Lu, Zhouguang; Pan, Hui

    2017-02-22

    Ni3S2 nanowire arrays doped with vanadium(V) are directly grown on nickel foam by a facile one-step hydrothermal method. It is found that the doping can promote the formation of Ni3S2 nanowires at a low temperature. The doped nanowires show excellent electrocatalytic performance toward hydrogen evolution reaction (HER), and outperform pure Ni3S2 and other Ni3S2-based compounds. The stability test shows that the performance of V-doped Ni3S2 nanowires is improved and stabilized after thousands of linear sweep voltammetry test. The onset potential of V-doped Ni3S2 nanowire can be as low as 39 mV, which is comparable to platinum. The nanowire has an overpotential of 68 mV at 10 mA cm(-2), a relatively low Tafel slope of 112 mV dec(-1), good stability and high Faradaic efficiency. First-principles calculations show that the V-doping in Ni3S2 extremely enhances the free carrier density near the Fermi level, resulting in much improved catalytic activities. We expect that the doping can be an effective way to enhance the catalytic performance of metal disulfides in hydrogen evolution reaction and V-doped Ni3S2 nanowire is one of the most promising electrocatalysts for hydrogen production.

  9. Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

    PubMed Central

    2013-01-01

    With the continued maturation of III–V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal–oxide–semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1–x nanowire arrays grown on silicon (111) by molecular beam epitaxy. The nanowires’ complex faceting, pure zinc blende crystal structure, and composition are mapped using characterization techniques both at the nanoscale and in large-area ensembles. We prove unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform. PMID:24329502

  10. Controllable Synthesis of Copper Oxide/Carbon Core/Shell Nanowire Arrays and Their Application for Electrochemical Energy Storage

    PubMed Central

    Zhan, Jiye; Chen, Minghua; Xia, Xinhui

    2015-01-01

    Rational design/fabrication of integrated porous metal oxide arrays is critical for the construction of advanced electrochemical devices. Herein, we report self-supported CuO/C core/shell nanowire arrays prepared by the combination of electro-deposition and chemical vapor deposition methods. CuO/C nanowires with diameters of ~400 nm grow quasi-vertically to the substrates forming three-dimensional arrays architecture. A thin carbon shell is uniformly coated on the CuO nanowire cores. As an anode of lithium ion batteries, the resultant CuO/C nanowire arrays are demonstrated to have high specific capacity (672 mAh·g−1 at 0.2 C) and good cycle stability (425 mAh·g−1 at 1 C up to 150 cycles). The core/shell arrays structure plays positive roles in the enhancement of Li ion storage due to fast ion/electron transfer path, good strain accommodation and sufficient contact between electrolyte and active materials. PMID:28347084

  11. Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

    SciTech Connect

    Nakata, M.; Toko, K. Suemasu, T.; Jevasuwan, W.; Fukata, N.; Saitoh, N.; Yoshizawa, N.

    2015-09-28

    Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.

  12. Enhanced magnetocrystalline anisotropy in an ultra-dense array of air-exposed crystalline cobalt nanowires

    NASA Astrophysics Data System (ADS)

    Camara, I. S.; Achkar, C.; Liakakos, N.; Pierrot, A.; Pierron-Bohnes, V.; Henry, Y.; Soulantica, K.; Respaud, M.; Blon, T.; Bailleul, M.

    2016-11-01

    The magnetic anisotropy of an ultradense array of crystalline cobalt nanowires is investigated by means of broadband ferromagnetic resonance and magnetic torque measurements. The array is grown epitaxially in solution on a Pt(111) film and consists of single crystalline metallic wires with a diameter of 6.2 nm and a center-to-center interwire distance of 9.6 nm. The shape anisotropy and the Co hexagonal compact structure with the c-axis along the wire axis combine with each other to impose a perpendicular magnetic anisotropy despite the high density of 8 × 1012 wires/in.2. The intrinsic uniaxial magnetocrystalline anisotropy constants K1 and K2 are extracted from the ferromagnetic resonance and torque measurements using a mean field approach accounting for the interwire dipolar interactions. At room temperature, and despite air exposure, an unexpected increase of K1 and K2 of more than 40% with respect to the bulk is evidenced.

  13. Electrical properties of high density arrays of silicon nanowire field effect transistors

    NASA Astrophysics Data System (ADS)

    Kim, Hye-Young; Lee, Kangho; Lee, Jae Woo; Kim, Sangwook; Kim, Gyu-Tae; Duesberg, Georg S.

    2013-10-01

    Proximity effect corrected e-beam lithography of hydrogen silsesquioxane on silicon on insulator was used to fabricate multi-channel silicon nanowire field-effect transistors (SiNW FETs). Arrays of 15-channels with a line width of 18 nm and pitch as small as 50 nm, the smallest reported for electrically functional devices, were fabricated. These high density arrays were back-gated by the substrate and allowed for investigation of the effects of scaling on the electrical performance of this multi-channel SiNW FET. It was revealed that the drain current and the transconductance (gm) are both reduced with decreasing pitch size. The drain induced barrier lowering and the threshold voltage (Vth) are also decreased, whereas the subthreshold swing (S) is increased. The results are in agreement with our simulations of the electric potential profile of the devices. The study contains valuable information on SiNW FET integration and scaling for future devices.

  14. High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.

    PubMed

    Russo-Averchi, Eleonora; Vukajlovic Plestina, Jelena; Tütüncüoglu, Gözde; Matteini, Federico; Dalmau-Mallorquí, Anna; de la Mata, Maria; Rüffer, Daniel; Potts, Heidi A; Arbiol, Jordi; Conesa-Boj, Sonia; Fontcuberta i Morral, Anna

    2015-05-13

    GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of GaAs nanowires on patterned Si in a reproducible way: contact angle and pinning of the Ga droplet inside the apertures achieved by the modification of the surface properties of the nanoscale areas exposed to growth. As an example, an amorphous silicon layer between the crystalline substrate and the oxide mask results in a contact angle around 90°, leading to a high yield of vertical nanowires. Another example for tuning the contact angle is anticipated, native oxide with controlled thickness. This work opens new perspectives for the rational and reproducible growth of GaAs nanowire arrays on silicon.

  15. Rapid Synthesis of Thin and Long Mo17O47 Nanowire-Arrays in an Oxygen Deficient Flame

    PubMed Central

    Allen, Patrick; Cai, Lili; Zhou, Lite; Zhao, Chenqi; Rao, Pratap M.

    2016-01-01

    Mo17O47 nanowire-arrays are promising active materials and electrically-conductive supports for batteries and other devices. While high surface area resulting from long, thin, densely packed nanowires generally leads to improved performance in a wide variety of applications, the Mo17O47 nanowire-arrays synthesized previously by electrically-heated chemical vapor deposition under vacuum conditions were relatively thick and short. Here, we demonstrate a method to grow significantly thinner and longer, densely packed, high-purity Mo17O47 nanowire-arrays with diameters of 20–60 nm and lengths of 4–6 μm on metal foil substrates using rapid atmospheric flame vapor deposition without any chamber or walls. The atmospheric pressure and 1000 °C evaporation temperature resulted in smaller diameters, longer lengths and order-of-magnitude faster growth rate than previously demonstrated. As explained by kinetic and thermodynamic calculations, the selective synthesis of high-purity Mo17O47 nanowires is achieved due to low oxygen partial pressure in the flame products as a result of the high ratio of fuel to oxidizer supplied to the flame, which enables the correct ratio of MoO2 and MoO3 vapor concentrations for the growth of Mo17O47. This flame synthesis method is therefore a promising route for the growth of composition-controlled one-dimensional metal oxide nanomaterials for many applications. PMID:27271194

  16. Rapid Synthesis of Thin and Long Mo17O47 Nanowire-Arrays in an Oxygen Deficient Flame

    NASA Astrophysics Data System (ADS)

    Allen, Patrick; Cai, Lili; Zhou, Lite; Zhao, Chenqi; Rao, Pratap M.

    2016-06-01

    Mo17O47 nanowire-arrays are promising active materials and electrically-conductive supports for batteries and other devices. While high surface area resulting from long, thin, densely packed nanowires generally leads to improved performance in a wide variety of applications, the Mo17O47 nanowire-arrays synthesized previously by electrically-heated chemical vapor deposition under vacuum conditions were relatively thick and short. Here, we demonstrate a method to grow significantly thinner and longer, densely packed, high-purity Mo17O47 nanowire-arrays with diameters of 20–60 nm and lengths of 4–6 μm on metal foil substrates using rapid atmospheric flame vapor deposition without any chamber or walls. The atmospheric pressure and 1000 °C evaporation temperature resulted in smaller diameters, longer lengths and order-of-magnitude faster growth rate than previously demonstrated. As explained by kinetic and thermodynamic calculations, the selective synthesis of high-purity Mo17O47 nanowires is achieved due to low oxygen partial pressure in the flame products as a result of the high ratio of fuel to oxidizer supplied to the flame, which enables the correct ratio of MoO2 and MoO3 vapor concentrations for the growth of Mo17O47. This flame synthesis method is therefore a promising route for the growth of composition-controlled one-dimensional metal oxide nanomaterials for many applications.

  17. Transparent-conducting-oxide nanowire arrays for efficient photoelectrochemical energy conversion

    NASA Astrophysics Data System (ADS)

    Lee, Sangwook; Park, Sangbaek; Han, Gill Sang; Kim, Dong Hoe; Noh, Jun Hong; Cho, In Sun; Jung, Hyun Suk; Hong, Kug Sun

    2014-07-01

    We report one dimensional (1-D) transparent-conducting-oxide arrays coated with light-absorbing semiconductors to simultaneously maximize light harvesting and charge collection in a photoelectrochemical (PEC) system. Tin-doped indium oxide (ITO) nanowire (NW) arrays are prepared on ITO thin-film substrates as the transparent-conducting-oxide, and TiO2 or CdSe/CdS/TiO2 thin layers were coated on the ITO NW arrays as the solar light-absorbing layers. The optimal PEC performance, 0.85% under 100 mW cm-2 of light illumination, is obtained from ~30 μm-long ITO NW, which is covered with ~20 nm-thick TiO2 nanoshell. We finally demonstrate that the ITO NW-based photoelectrode is also compatible with one of the most efficient visible-light sensitizers, the CdS/CdSe quantum dot. Our approach using the transparent conducting 1-D array has wide potential to improve the PEC performances of conventional semiconducting materials through liberation from the poor charge transport.We report one dimensional (1-D) transparent-conducting-oxide arrays coated with light-absorbing semiconductors to simultaneously maximize light harvesting and charge collection in a photoelectrochemical (PEC) system. Tin-doped indium oxide (ITO) nanowire (NW) arrays are prepared on ITO thin-film substrates as the transparent-conducting-oxide, and TiO2 or CdSe/CdS/TiO2 thin layers were coated on the ITO NW arrays as the solar light-absorbing layers. The optimal PEC performance, 0.85% under 100 mW cm-2 of light illumination, is obtained from ~30 μm-long ITO NW, which is covered with ~20 nm-thick TiO2 nanoshell. We finally demonstrate that the ITO NW-based photoelectrode is also compatible with one of the most efficient visible-light sensitizers, the CdS/CdSe quantum dot. Our approach using the transparent conducting 1-D array has wide potential to improve the PEC performances of conventional semiconducting materials through liberation from the poor charge transport. Electronic supplementary information

  18. Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Liu, Ruiyuan; Zhang, Fute; Con, Celal; Cui, Bo; Sun, Baoquan

    2013-04-01

    We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution.

  19. Graphene quantum dots modified silicon nanowire array for ultrasensitive detection in the gas phase

    NASA Astrophysics Data System (ADS)

    Li, T. Y.; Duan, C. Y.; Zhu, Y. X.; Chen, Y. F.; Wang, Y.

    2017-03-01

    Si nanostructure-based gas detectors have attracted much attention due to their huge surface areas, relatively high carrier mobility, maneuverability for surface functionalization and compatibility to modern electronic industry. However, the unstable surface of Si, especially for the nanostructures in a corrosive atmosphere, hinders their sensitivity and reproducibility when used for detection in the gas phase. In this study, we proposed a novel strategy to fabricate a Si-based gas detector by using the vertically aligned Si nanowire (SiNW) array as a skeleton and platform, and decorated chemically inert graphene quantum dots (GQDs) to protect the SiNWs from oxidation and promote the carriers’ interaction with the analytes. The radial core–shell structures of the GQDs/SiNW array were then assembled into a resistor-based gas detection system and evaluated by using nitrogen dioxide (NO2) as the model analyte. Compared to the bare SiNW array, our novel sensor exhibited ultrahigh sensitivity for detecting trace amounts of NO2 with the concentration as low as 10 ppm in room temperature and an immensely reduced recovery time, which is of significant importance for their practical application. Meanwhile, strikingly, reproducibility and stability could also be achieved by showing no sensitivity decline after storing the GQDs/SiNW array in air for two weeks. Our results demonstrate that protecting the surface of the SiNW array with chemically inert GQDs is a feasible strategy to realize ultrasensitive detection in the gas phase.

  20. Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions.

    PubMed

    Huang, Zhipeng; Shimizu, Tomohiro; Senz, Stephan; Zhang, Zhang; Zhang, Xuanxiong; Lee, Woo; Geyer, Nadine; Gösele, Ulrich

    2009-07-01

    The metal-assisted etching direction of Si(110) substrates was found to be dependent upon the morphology of the deposited metal catalyst. The etching direction of a Si(110) substrate was found to be one of the two crystallographically preferred 100 directions in the case of isolated metal particles or a small area metal mesh with nanoholes. In contrast, the etching proceeded in the vertical [110] direction, when the lateral size of the catalytic metal mesh was sufficiently large. Therefore, the direction of etching and the resulting nanostructures obtained by metal-assisted etching can be easily controlled by an appropriate choice of the morphology of the deposited metal catalyst. On the basis of this finding, a generic method was developed for the fabrication of wafer-scale vertically aligned arrays of epitaxial [110] Si nanowires on a Si(110) substrate. The method utilized a thin metal film with an extended array of pores as an etching catalyst based on an ultrathin porous anodic alumina mask, while a prepatterning of the substrate prior to the metal depostion is not necessary. The diameter of Si nanowires can be easily controlled by a combination of the pore diameter of the porous alumina film and varying the thickness of the deposited metal film.

  1. Highly sensitive refractive index sensor based on a TiO2 nanowire array.

    PubMed

    Li, Qiu-Shun; Xiang, Dong; Chang, Zhi-Min; Shi, Jian-Guo; Ma, Yao-Hong; Cai, Lei; Feng, Dong; Dong, Wen-Fei

    2017-03-01

    We propose a novel, highly sensitive refractive index (RI) sensor by means of combining the Kretschmann prism with a TiO2 nanowire array and do not use a metallic layer in the Kretschmann configuration. Its RI sensing performance was investigated through measuring different concentrations of sodium chloride solution. Experimental results showed that, with increasing RI of liquid, the resonant wavelength in the reflectance spectrum redshifted gradually in the visible light range. There was a very good linear relationship between resonant wavelength and RI in the range of 1.3330 to 1.3546. More importantly, in contrast to the surface plasmon resonance (SPR) sensor, the interferometric sensors showed higher sensitivity to the external RI. In the case of the transverse magnetic mode, the RI sensitivity is up to 320,700.93 a.u./RIU (refractive index unit) by expression of light intensity, which is 9.55 times that of the SPR sensor. As for the transverse electric mode, it achieves 4371.76 nm/RIU by expression of the resonant wavelength, which is increased by a factor of 1.4 in comparison with the SPR sensor. Moreover, the experimental results have favorable repeatability. A TiO2 nanowire array sensor has also other advantages, such as easy manufacturing, low cost, and in situ determination, etc. To our knowledge, this fact is reported for the first time. It has great potential applications in the field of biological and chemical sensing.

  2. Silicon nanowire arrays-induced graphene oxide reduction under UV irradiation.

    PubMed

    Fellahi, Ouarda; Das, Manash R; Coffinier, Yannick; Szunerits, Sabine; Hadjersi, Toufik; Maamache, Mustapha; Boukherroub, Rabah

    2011-11-01

    This paper reports on efficient UV irradiation-induced reduction of exfoliated graphene oxide. Direct illumination of an aqueous solution of graphene oxide at λ = 312 nm for 6 h resulted in the formation of graphene nanosheets dispersible in water. X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy, atomic force microscopy (AFM) and electrochemical measurements (cyclic voltammetry and electrochemical impedance spectroscopy) suggest a restoration of the sp(2) carbon network. The results were compared with graphene nanosheets prepared by photochemical irradiation of a GO aqueous solution in the presence of hydrogenated silicon nanowire (SiNW) arrays or silicon nanowire arrays decorated with silver (SiNW/Ag NPs) or copper nanoparticles (SiNW/Cu NPs). Graphene nanosheets obtained by illumination of the GO aqueous solution at 312 nm for 6 h in the presence of SiNW/Cu NPs exhibited superior electrochemical charge transfer characteristics. This is mainly due to the higher amount of sp(2)-hybridized carbon in these graphene sheets found by XPS analysis. The high level of extended conjugated carbon network was also evident by the water insoluble nature of the resulting graphene nanosheets, which precipitated upon photochemical reduction.

  3. Polarization-tuned Dynamic Color Filters Incorporating a Dielectric-loaded Aluminum Nanowire Array

    PubMed Central

    Raj Shrestha, Vivek; Lee, Sang-Shin; Kim, Eun-Soo; Choi, Duk-Yong

    2015-01-01

    Nanostructured spectral filters enabling dynamic color-tuning are saliently attractive for implementing ultra-compact color displays and imaging devices. Realization of polarization-induced dynamic color-tuning via one-dimensional periodic nanostructures is highly challenging due to the absence of plasmonic resonances for transverse-electric polarization. Here we demonstrate highly efficient dynamic subtractive color filters incorporating a dielectric-loaded aluminum nanowire array, providing a continuum of customized color according to the incident polarization. Dynamic color filtering was realized relying on selective suppression in transmission spectra via plasmonic resonance at a metal-dielectric interface and guided-mode resonance for a metal-clad dielectric waveguide, each occurring at their characteristic wavelengths for transverse-magnetic and electric polarizations, respectively. A broad palette of colors, including cyan, magenta, and yellow, has been attained with high transmission beyond 80%, by tailoring the period of the nanowire array and the incident polarization. Thanks to low cost, high durability, and mass producibility of the aluminum adopted for the proposed devices, they are anticipated to be diversely applied to color displays, holographic imaging, information encoding, and anti-counterfeiting. PMID:26211625

  4. Low-concentration mechanical biosensor based on a photonic crystal nanowire array.

    PubMed

    Lu, Yuerui; Peng, Songming; Luo, Dan; Lal, Amit

    2011-12-06

    The challenge for new biosensors is to achieve detection of biomolecules at low concentrations, which is useful for early-stage disease detection. Nanomechanical biosensors are promising in medical diagnostic applications. For nanomechanical biosensing at low concentrations, a sufficient resonator device surface area is necessary for molecules to bind to. Here we present a low-concentration (500 aM sensitivity) DNA sensor, which uses a novel nanomechanical resonator with ordered vertical nanowire arrays on top of a Si/SiO(2) bilayer thin membrane. The high sensitivity is achieved by the strongly enhanced total surface area-to-volume ratio of the resonator (10(8) m(-1)) and the state-of-the-art mass-per-area resolution (1.8×10(-12) kg m(-2)). Moreover, the nanowire array forms a photonic crystal that shows strong light trapping and absorption over broad-band optical wavelengths, enabling high-efficiency broad-band opto-thermo-mechanical remote device actuation and biosensing on a chip. This method represents a mass-based platform technology that can sense molecules at low concentrations.

  5. Multiplexed detection of cardiac biomarkers in serum with nanowire arrays using readout ASIC.

    PubMed

    Zhang, Guo-Jun; Chai, Kevin Tshun Chuan; Luo, Henry Zhan Hong; Huang, Joon Min; Tay, Ignatius Guang Kai; Lim, Andy Eu-Jin; Je, Minkyu

    2012-05-15

    Early detection of cardiac biomarkers for diagnosis of heart attack is the key to saving lives. Conventional method of detection like the enzyme-linked immunosorbent assay (ELISA) is time consuming and low in sensitivity. Here, we present a label-free detection system consisting of an array of silicon nanowire sensors and an interface readout application specific integrated circuit (ASIC). This system provides a rapid solution that is highly sensitive and is able to perform direct simultaneous-multiplexed detection of cardiac biomarkers in serum. Nanowire sensor arrays were demonstrated to have the required selectivity and sensitivity to perform multiplexed detection of 100 fg/ml troponin T, creatine kinase MM, and creatine kinase MB in serum. A good correlation between measurements from a probe station and the readout ASIC was obtained. Our detection system is expected to address the existing limitations in cardiac health management that are currently imposed by the conventional testing platform, and opens up possibilities in the development of a miniaturized device for point-of-care diagnostic applications.

  6. Understanding Self-Catalyzed Epitaxial Growth of III-V Nanowires toward Controlled Synthesis.

    PubMed

    Zi, Yunlong; Suslov, Sergey; Yang, Chen

    2017-02-08

    The self-catalyzed growth of III-V nanowires has drawn plenty of attention due to the potential of integration in current Si-based technologies. The homoparticle-assisted vapor-liquid-solid growth mechanism has been demonstrated for self-catalyzed III-V nanowire growth. However, the understandings of the preferred growth sites of these nanowires are still limited, which obstructs the controlled synthesis and the applications of self-catalyzed nanowire arrays. Here, we experimentally demonstrated that thermally created pits could serve as the preferred sites for self-catalyzed InAs nanowire growth. On that basis, we performed a pregrowth annealing strategy to promote the nanowire density by enhancing the pits formation on the substrate surface and enable the nanowire growth on the substrate that was not capable to facilitate the growth. The discovery of the preferred self-catalyzed nanowire growth sites and the pregrowth annealing strategy have shown great potentials for controlled self-catalyzed III-V nanowire array growth with preferred locations and density.

  7. High efficiency dye-sensitized solar cells based on three-dimensional multilayered ZnO nanowire arrays with "caterpillar-like" structure.

    PubMed

    McCune, Mallarie; Zhang, Wei; Deng, Yulin

    2012-07-11

    A 3D ZnO nanowire-based dye-sensitized solar cell (DSSC) with unique "caterpillar-like" structure was designed. Because of the significant improvement of the total ZnO nanowire surface area, the amount of light absorption was substantially increased. This increase in the light harvesting efficiency enables us to achieve an overall power conversion efficiency as high as 5.20%, which is the highest reported value to date for ZnO nanowire-based DSSCs. A branched-multilayered design of ZnO nanowire arrays grown from ZnO nanofiber seed layers proves to be very successful in fabricating 3D ZnO nanowire arrays. Practically, electrospun ZnO nanowires were used as the seeds in multilayer growth of ZnO nanowire arrays with a unique "caterpillar-like" structure. This unique structure significantly enhances the surface area of the ZnO nanowire arrays, leading to higher short-circuit currents. Additionally, this design resulted in closer spacing between the nanowires and more direct conduction pathways for electron transfer. Thus, the open-circuit voltage was so significantly improved as a direct result of the reduction in electron recombination.

  8. Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

    PubMed

    Li, Yufeng; Zhang, Zhipeng; Zhang, Guofu; Zhao, Long; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

    2017-02-01

    Zinc oxide (ZnO) nanowires are prepared for application in large area gated field emitter arrays (FEAs). By oxidizing Al-coated Zn films, the population density of the ZnO nanowires was tuned precisely by varying the thickness of the Al film. The nanowire density decreased linearly as the thickness of the Al film increased. Optimal field emission properties with a turn-on field of 6.21 V μm(-1) and current fluctuations less than 1% are obtained. This can be explained by the minimized screening effect and good electrical conductivity of the back-contact layer. The mechanism responsible for the linear variation in the nanowire density is investigated in detail. Addressable FEAs using the optimal ZnO nanowire cathodes were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results indicate that ZnO nanowires could be applied in large area FEAs.

  9. KOH post-etching-induced rough silicon nanowire array for H2 gas sensing application

    NASA Astrophysics Data System (ADS)

    Qin, Yuxiang; Wang, Yongyao; Liu, Yi; Zhang, Xiaojuan

    2016-11-01

    The limited surface area and compacted configuration of silicon nanowires (SiNWs), which are made by one-step metal-assisted chemical etching (MACE) go against target gas diffusion and adsorbtion for gas sensing application. To harvest suitable gas sensitivity and fast response-recovery characteristics, an aligned, rough SiNW array with loose configuration and high surface area was fabricated by a two-step etching process. The MACE technique was first employed to fabricate a smooth SiNW array, and then a KOH post-etching method was developed to roughen the NW surface further. The influence of the KOH post-etching time on the array density and surface roughness of the SiNWs was investigated, and the H2-sensing properties of the sensor based on the as-fabricated rough SiNW array were evaluated systematically at room temperature. It was revealed that the post-etching of KOH roughens the NW surface effectively, and also decreases the wire diameter and array density considerably. The resulting configuration of the SiNW array with high active surface and loose geometry is favorable for gas sensing. Consequently, the rough SiNW array-based sensor exhibited a linear response to H2 with a wide range of concentrations (50-10 000 ppm) at room temperature. Good stability and selectivity, satisfying response-recovery characteristics were also achieved. However, over-etching of SiNWs by KOH solution results in a considerable decrease in surface roughness and then in the H2-sensing response of the NWs.

  10. Hierarchically Structured Co3O4@Pt@MnO2 Nanowire Arrays for High-Performance Supercapacitors

    PubMed Central

    Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

    2013-01-01

    Here we proposed a novel architectural design of a ternary MnO2-based electrode – a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2–based nanowire arrays for constructing next-generation supercapacitors. PMID:24132040

  11. Heterogeneous NiCo2O4@polypyrrole core/sheath nanowire arrays on Ni foam for high performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Hu, Jing; Li, Minchan; Lv, Fucong; Yang, Mingyang; Tao, Pengpeng; Tang, Yougen; Liu, Hongtao; Lu, Zhouguang

    2015-10-01

    A novel heterogeneous NiCo2O4@PPy core/sheath nanowire arrays are directly grown on Ni foam involving three facile steps, hydrothermal synthesis and calcination of NiCo2O4 nanowire arrays and subsequent in-situ oxidative polymerization of polypyrrole (PPy). When investigated as binder- and conductive additive-free electrodes for supercapacitors (SCs) in 6 M KOH, the NiCo2O4@PPy core/sheath nanowire arrays exhibit high areal capacitance of 3.49 F cm-2 at a discharge current density of 5 mA cm-2, which is almost 1.5 times as much as the pristine NiCo2O4 (2.30 F cm-2). More importantly, it can remain 3.31 F cm-2 (94.8% retention) after 5000 cycles. The as-obtained electrode also displays excellent rate capability, whose areal capacitance can still remain 2.79 F cm-2 while the discharge current density is increased to 50 mA cm-2. The remarkable electrochemical performance is mainly attributed to the unique heterogeneous core/sheath nanowire-array architectures.

  12. Interaction effects on microwave-assisted switching of Ni80Fe20 nanowires in densely packed arrays

    NASA Astrophysics Data System (ADS)

    Topp, Jesco; Heitmann, Detlef; Grundler, Dirk

    2009-11-01

    We perform broadband microwave absorption spectroscopy and explore the switching behavior of 300-nm-wide and 20-nm-thick Ni80Fe20 nanowires under irradiation of a magnetic rf field. In particular, we investigate two arrays where the nanowires exhibit a different edge-to-edge separation, a=100 and 700 nm. In the arrays we observe microwave-assisted switching (MAS). The MAS process with a resonant behavior near 6 GHz is attributed to the excitation of a confined Damon-Eshbach-type mode. Dipolar interactions between nanowires are found to decrease the optimum frequency for MAS and to increase the switching efficiency for the small separation a . The observed characteristics are substantiated by model considerations. We propose a modification of the previously introduced analytical demagnetization factors of an individual thin wire and incorporate the effect of dipolar interactions occurring in the array. The approach explains the dependence of the MAS-relevant eigenmode on the edge-to-edge separation a . MAS is also found to narrow the switching field distribution of the nanowire array.

  13. Laser Modified ZnO/CdSSe Core-Shell Nanowire Arrays for Micro-Steganography and Improved Photoconduction

    PubMed Central

    Lu, Junpeng; Liu, Hongwei; Zheng, Minrui; Zhang, Hongji; Lim, Sharon Xiaodai; Tok, Eng Soon; Sow, Chorng Haur

    2014-01-01

    Arrays of ZnO/CdSSe core/shell nanowires with shells of tunable band gaps represent a class of interesting hybrid nanomaterials with unique optical and photoelectrical properties due to their type II heterojunctions and chemical compositions. In this work, we demonstrate that direct focused laser beam irradiation is able to achieve localized modification of the hybrid structure and chemical composition of the nanowire arrays. As a result, the photoresponsivity of the laser modified hybrid is improved by a factor of ~3. A 3D photodetector with improved performance is demonstrated using laser modified nanowire arrays overlaid with monolayer graphene as the top electrode. Finally, by controlling the power of the scanning focused laser beam, micropatterns with different fluorescence emissions are created on a substrate covered with nanowire arrays. Such a pattern is not apparent when imaged under normal optical microscopy but the pattern becomes readily revealed under fluorescence microscopy i.e. a form of Micro-Steganography is achieved. PMID:25213321

  14. Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

    PubMed

    Liu, Lin; Peng, Kui-Qing; Hu, Ya; Wu, Xiao-Ling; Lee, Shuit-Tong

    2014-03-05

    Macroscopic galvanic cell-driven metal catalyzed electroless etching (MCEE) of silicon in aqueous hydrofluoric acid (HF) solution is devised to fabricate silicon nanowire (SiNW) arrays with dissolved oxygen acting as the one and only oxidizing agent. The key aspect of this strategy is the use of a graphite or other noble metal electrode that is electrically coupled with silicon substrate.

  15. A review and analysis on growth and optical absorption properties of silicon nanowire array for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Sharma, Ritu; Dusad, Lalit Kumar

    2015-11-01

    In this paper, optical absorptions in silicon nanowires (SiNWs) arrays obtained from theoretical studies and experimental approaches have been reviewed. A brief description on the different growth techniques for SiNW arrays reported so far is presented. Comparative analysis based on major research findings has been done and the advantages of SiNW-based solar cells over thin film solar cells are presented. Furthermore, future aspects of the use of SiNWs for photovoltaic applications are discussed.

  16. A technique for large-area position-controlled growth of GaAs nanowire arrays

    NASA Astrophysics Data System (ADS)

    Kauppinen, Christoffer; Haggren, Tuomas; Kravchenko, Aleksandr; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Dhaka, Veer; Suihkonen, Sami; Kaivola, Matti; Lipsanen, Harri; Sopanen, Markku

    2016-04-01

    We demonstrate a technique for fabricating position-controlled, large-area arrays of vertical semiconductor nanowires (NWs) with adjustable periods and NW diameters. In our approach, a Au-covered GaAs substrate is first coated with a thin film of photoresponsive azopolymer, which is exposed twice to a laser interference pattern forming a 2D surface relief grating. After dry etching, an array of polymer islands is formed, which is used as a mask to fabricate a matrix of gold particles. The Au particles are then used as seeds in vapour-liquid-solid growth to create arrays of vertical GaAs NWs using metalorganic vapour phase epitaxy. The presented technique enables producing NWs of uniform size distribution with high throughput and potentially on large wafer sizes without relying on expensive lithography techniques. The feasibility of the technique is demonstrated by arrays of vertical NWs with periods of 255-1000 nm and diameters of 50-80 nm on a 2 × 2 cm area. The grown NWs exhibit high long range order and good crystalline quality. Although only GaAs NWs were grown in this study, in principle, the presented technique is suitable for any material available for Au seeded NW growth.

  17. Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

    PubMed Central

    2013-01-01

    The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process. PMID:24188092

  18. Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

    NASA Astrophysics Data System (ADS)

    Gorisse, Therese; Dupré, Ludovic; Gentile, Pascal; Martin, Mickael; Zelsmann, Marc; Buttard, Denis

    2013-06-01

    In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>-oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm-2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors.

  19. Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers.

    PubMed

    Gorisse, Therese; Dupré, Ludovic; Gentile, Pascal; Martin, Mickael; Zelsmann, Marc; Buttard, Denis

    2013-06-17

    In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>-oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm-2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors.

  20. Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

    PubMed Central

    2013-01-01

    In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>−oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm−2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors. PMID:23773702

  1. Influence of metallic and dielectric nanowire arrays on the photoluminescence properties of P3HT thin films.

    PubMed

    Handloser, M; Dunbar, R B; Wisnet, A; Altpeter, P; Scheu, C; Schmidt-Mende, L; Hartschuh, A

    2012-08-03

    The optical properties of organic semiconductor thin films deposited on nanostructured surfaces are investigated using time-resolved two-photon photoluminescence (PL) microscopy. The surfaces consist of parallel aligned metallic or dielectric nanowires forming well-defined arrays on glass substrates. Keeping the nanowire dimensions constant and varying only their spacing from 40 to 400 nm, we study the range of different types of nanowire-semiconductor interactions. For silver nanowires and spacings below 100 nm, the PL intensity and lifetime of P3HT and MDMO-PPV decrease rapidly due to the short-ranged metal-induced quenching that dominates the PL response with respect to a possible plasmonic enhancement of optical transition rates. In the case of P3HT however, we observe an additional longer-ranged reduction of non-radiative losses for both metallic and dielectric nanowires that is not observed for MDMO-PPV. Excitation polarization dependent measurements indicate that this reduction is due to self-assembly of the P3HT polymer chains along the nanowires. In conclusion, nanostructured surfaces, when fabricated across large areas, could be used to control film morphologies and to improve energy transport and collection efficiencies in P3HT-based solar cells.

  2. Photonic band structure and effective medium properties of doubly-resonant core-shell metallo-dielectric nanowire arrays: low-loss, isotropic optical negative-index behavior

    NASA Astrophysics Data System (ADS)

    Abujetas, D. R.; Paniagua-Domínguez, R.; Nieto-Vesperinas, M.; Sánchez-Gil, J. A.

    2015-12-01

    We investigate theoretically and numerically the photonic band structure in the optical domain of an array of core-shell metal-semiconductor nanowires. Corresponding negative-index photonic bands are calculated, showing isotropic equifrequency surfaces. The effective (negative) electric permittivity and magnetic permeability, retrieved from S-parameters, are used to compare the performance of such nanowire arrays with homogeneous media in canonical examples, such as refraction through a prism and flat-lens focusing. Very good agreement is found, confirming the effective medium behavior of the nanowire array as a low-loss, isotropic (2D) and bulk, optical negative index metamaterial. Indeed, disorder is introduced to further stress its robustness.

  3. Enhanced electrochemical performance of polyaniline/carbon/titanium nitride nanowire array for flexible supercapacitor

    NASA Astrophysics Data System (ADS)

    Xie, Yibing; Xia, Chi; Du, Hongxiu; Wang, Wei

    2015-07-01

    The ternary nanocomposite of polyaniline/carbon/titanium nitride (PANI/C/TiN) nanowire array (NWA) is fabricated as electroactive electrode material for flexible supercapacitor application. Firstly, TiN NWA is formed through ammonia nitridation treatment of TiO2 NWA, which is synthesized via seed-assisted hydrothermal reaction. PANI/C/TiN NWA is then formed through sequentially coating carbon and PANI on the surface of TiN NWA. PANI/C/TiN NWA has unique shell/shell/core architecture, including a core layer of TiN NWA with a diameter of 40-160 nm and a length of 1.5 μm, a middle shell layer of carbon with a thickness of about 6.0 nm and an external surface layer of PANI with a thickness of 20-50 nm. PANI/C/TiN NWA provides ion diffusion channel at interspaces between the neighboring nanowires and electron transfer route along independent nanowires. The carbon shell layer is able to protect TiN NWA from electrochemical corrosion during charge/discharge process. PANI/C/TiN NWA displays high specific capacitance of 1093 F g-1 at 1.0 Ag-1, and good cycling stability with a capacity retention of 98% after 2000 cycles, presenting better supercapacitive performance than other integrated nanocomposites of C/PANI/TiN, PANI/TiN and PANI/C/TiO2 NWA. Such a ternary nanocomposite of PANI/C/TiN NWA can be used as an electrode material of flexible supercapacitors.

  4. Layer-by-layer assembly synthesis of ZnO/SnO{sub 2} composite nanowire arrays as high-performance anode for lithium-ion batteries

    SciTech Connect

    Wang, Jiazheng; Du, Ning; Zhang, Hui; Yu, Jingxue; Yang, Deren

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer SnO{sub 2} nanoparticles was deposited on ZnO nanoarrays through layer-by-layer assembly. Black-Right-Pointing-Pointer The composite nanowire arrays show improved performance as anode for Li-ion battery. Black-Right-Pointing-Pointer Improved performance was attributed to the combining advantages of each ingredient. -- Abstract: A layer-by-layer approach has been developed to synthesize ZnO/SnO{sub 2} composite nanowire arrays on copper substrate. ZnO nanowire arrays have been first prepared on copper substrate through seed-assisted method, and then, the surface of ZnO nanowires have been modified by the polyelectrolyte. After oxidation-reduction reaction, SnO{sub 2} layer has been deposited onto the surface of ZnO nanowires. The as-synthesized ZnO/SnO{sub 2} composite nanowire arrays have been applied as anode for lithium-ion batteries, which show high reversible capacity and good cycling stability compared to pure ZnO nanowire arrays and SnO{sub 2} nanoparticles. It is believed that the improved performance may be attributed to the high capacity of SnO{sub 2} and the good cycling stability of the array structure on current collector.

  5. Self-assembled nanowire arrays as three-dimensional nanopores for filtration of DNA molecules.

    PubMed

    Rahong, Sakon; Yasui, Takao; Yanagida, Takeshi; Nagashima, Kazuki; Kanai, Masaki; Meng, Gang; He, Yong; Zhuge, Fuwei; Kaji, Noritada; Kawai, Tomoji; Baba, Yoshinobu

    2015-01-01

    Molecular filtration and purification play important roles for biomolecule analysis. However, it is still necessary to improve efficiency and reduce the filtration time. Here, we show self-assembled nanowire arrays as three-dimensional (3D) nanopores embedded in a microfluidic channel for ultrafast DNA filtration. The 3D nanopore structure was formed by a vapor-liquid-solid (VLS) nanowire growth technique, which allowed us to control pore size of the filtration material by varying the number of growth cycles. λ DNA molecules (48.5 kbp) were filtrated from a mixture of T4 DNA (166 kbp) at the entrance of the 3D nanopore structure within 1 s under an applied electric field. Moreover, we observed single DNA molecule migration of T4 and λ DNA molecules to clarify the filtration mechanism. The 3D nanopore structure has simplicity of fabrication, flexibility of pore size control and reusability for biomolecule filtration. Consequently it is an excellent material for biomolecular filtration.

  6. Band gap enhancement of glancing angle deposited TiO{sub 2} nanowire array

    SciTech Connect

    Chinnamuthu, P.; Mondal, A.; Singh, N. K.; Dhar, J. C.; Chattopadhyay, K. K.; Bhattacharya, Sekhar

    2012-09-01

    Vertically oriented TiO{sub 2} nanowire (NW) arrays were fabricated by glancing angle deposition technique. Field emission-scanning electron microscopy shows the formation of two different diameters {approx}80 nm and {approx}40 nm TiO{sub 2} NW for 120 and 460 rpm azimuthal rotation of the substrate. The x-ray diffraction and Raman scattering depicted the presence of rutile and anatase phase TiO{sub 2}. The overall Raman scattering intensity decreased with nanowire diameter. The role of phonon confinement in anatase and rutile peaks has been discussed. The red (7.9 cm{sup -1} of anatase E{sub g}) and blue (7.4 cm{sup -1} of rutile E{sub g}, 7.8 cm{sup -1} of rutile A{sub 1g}) shifts of Raman frequencies were observed. UV-vis absorption measurements show the main band absorption at 3.42 eV, 3.48 eV, and {approx}3.51 eV for thin film and NW prepared at 120 and 460 rpm, respectively. Three fold enhance photon absorption and intense light emission were observed for NW assembly. The photoluminescence emission from the NW assembly revealed blue shift in main band transition due to quantum confinement in NW structures.

  7. Conjugated polymer-silicon nanowire array hybrid Schottky diode for solar cell application.

    PubMed

    Zhang, Fute; Song, Tao; Sun, Baoquan

    2012-05-17

    The hybrid Schottky diode based on silicon nanowire arrays (SiNWs) and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) has been fabricated for high performance solar cells. The length of SiNWs on a silicon substrate, which is prepared by metal-assisted chemical etching, can be tuned by adjusting the length of the etching time. In addition, the average distances between the adjacent silicon nanowires can be controlled by changing the immersing time in a saturated PCl(5) solution. The hybrid devices are made from the SiNWs with different wire lengths and various distances between adjacent wires by spin-casting PEDOT:PSS on the silicon substrates. It is found that the length and density play leading roles in the electric output characteristics. The device made from SiNWs with optimum morphology can achieve a power conversion efficiency of 7.3%, which is much improved in comparison with that of the planar one. The measurement of the transient photovoltage decay and the analysis of the current versus voltage curve indicate that the charge recombination process is a dominant factor on the device performance.

  8. Conjugated polymer-silicon nanowire array hybrid Schottky diode for solar cell application

    NASA Astrophysics Data System (ADS)

    Zhang, Fute; Song, Tao; Sun, Baoquan

    2012-05-01

    The hybrid Schottky diode based on silicon nanowire arrays (SiNWs) and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) has been fabricated for high performance solar cells. The length of SiNWs on a silicon substrate, which is prepared by metal-assisted chemical etching, can be tuned by adjusting the length of the etching time. In addition, the average distances between the adjacent silicon nanowires can be controlled by changing the immersing time in a saturated PCl5 solution. The hybrid devices are made from the SiNWs with different wire lengths and various distances between adjacent wires by spin-casting PEDOT:PSS on the silicon substrates. It is found that the length and density play leading roles in the electric output characteristics. The device made from SiNWs with optimum morphology can achieve a power conversion efficiency of 7.3%, which is much improved in comparison with that of the planar one. The measurement of the transient photovoltage decay and the analysis of the current versus voltage curve indicate that the charge recombination process is a dominant factor on the device performance.

  9. Highly Uniform and Reproducible Surface Enhanced Raman Scattering on Air-stable Metallic Glassy Nanowire Array

    PubMed Central

    Liu, Xue; Shao, Yang; Tang, Yao; Yao, Ke-Fu

    2014-01-01

    Preparation of surface enhanced Raman scattering (SERS) nanostructures with both high sensitivity as well as high reproducibility has always been difficult and costly for routine SERS detection. Here we demonstrate air-stable metallic glassy nanowire arrays (MGNWAs), which were prepared by a cheap and rapid die nanoimprinting technique, could exhibit high SERS enhancement factor (EF) as well as excellent reproducibility. It shows that Pd40.5Ni40.5P19 MGNWA with nanowires of 55 nm in diameter and 100 nm in pitch possesses high SERS activity with an EF of 1.1 × 105, which is 1–3 orders of magnitudes higher than that of the reported crystal Ni-based nanostructures, and an excellent reproducibility with a relative standard deviation of 9.60% measured by 121 points over an area of 100 μm*100 μm. This method offers an easy, rapid, and low-cost way to prepare highly sensitive and reproducible SERS substrates and makes the SERS more practicable. PMID:25060646

  10. Flexible high-output nanogenerator based on lateral ZnO nanowire array.

    PubMed

    Zhu, Guang; Yang, Rusen; Wang, Sihong; Wang, Zhong Lin

    2010-08-11

    We report here a simple and effective approach, named scalable sweeping-printing-method, for fabricating flexible high-output nanogenerator (HONG) that can effectively harvesting mechanical energy for driving a small commercial electronic component. The technique consists of two main steps. In the first step, the vertically aligned ZnO nanowires (NWs) are transferred to a receiving substrate to form horizontally aligned arrays. Then, parallel stripe type of electrodes are deposited to connect all of the NWs together. Using a single layer of HONG structure, an open-circuit voltage of up to 2.03 V and a peak output power density of approximately 11 mW/cm(3) have been achieved. The generated electric energy was effectively stored by utilizing capacitors, and it was successfully used to light up a commercial light-emitting diode (LED), which is a landmark progress toward building self-powered devices by harvesting energy from the environment. This research opens up the path for practical applications of nanowire-based piezoelectric nanogeneragtors for self-powered nanosystems.

  11. Technology for fabrication of sub-20 nm silicon planar nanowires array

    NASA Astrophysics Data System (ADS)

    Miakonkikh, Andrey V.; Tatarintsev, Andrey A.; Rogozhin, Alexander E.; Rudenko, Konstantin V.

    2016-12-01

    The results presented on Silicon one-dimensional structures fabrication which are promising for application in nanoelectronics, sensors, THz-applications. We employ two-stage technology of precise anizotropic plasma etching of silicon over e-beam resist and isotropic removal of thermally oxidised defected surface layer of silicon by wet etch. As first the process for nano-fins fabrication on SOI substrate was developed. HSQ resist was used as a negative-tone electron beam resist with good etch-resistance, high resolution and high mechanical stability. The etching was performed by RIE in mix of SF6 + C4F8. plasma. By changing the ratio SF6:C4F8, the sidewall profile angle can be controlled thoroughly. Next step to minimize lateral size of structures and reduce impact of surface defects on electron mobility in core of nanowires was the application of surface thermal oxidation to defected layer. It was used for selective removal of damaged silicon layer and polymer residues. Oxidation was performed with controlled flow of dry oxygen and water vapour. Oxidation rate was precisely controlled by ex-situ spectral ellipsometry on unpatterned chips As a result the arrays of planar sub-20 nm Silicon nanowires with length in the range 200 nm - 500 um were made.

  12. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  13. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.

    PubMed

    Jeon, Youngin; Kang, Jeongmin; Lee, Myeongwon; Moon, Taeho; Kim, Sangsig

    2013-05-01

    Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on a single Si-NW array composed of five nanowires aligned in parallel and connected in series to form NOT-logic circuits. The excellent flexibility of the fabricated device was confirmed by bending-cycling tests. The voltage-transfer curve of the NOT-logic circuits showed an inverting operation with a logic swing of -92% and voltage gain of -2.5.

  14. Hydrothermal Fabrication of Hierarchically Anatase TiO2 Nanowire arrays on FTO Glass for Dye-sensitized Solar Cells

    PubMed Central

    Wu, Wu-Qiang; Lei, Bing-Xin; Rao, Hua-Shang; Xu, Yang-Fan; Wang, Yu-Fen; Su, Cheng-Yong; Kuang, Dai-Bin

    2013-01-01

    Hierarchical anatase TiO2 nano-architecture arrays consisting of long TiO2 nanowire trunk and numerous short TiO2 nanorod branches on transparent conductive fluorine-doped tin oxide glass are successfully synthesized for the first time through a facile one-step hydrothermal route without any surfactant and template. Dye-sensitized solar cells based on the hierarchical anatase TiO2 nano-architecture array photoelectrode of 18 μm in length shows a power conversion efficiency of 7.34% because of its higher specific surface area for adsorbing more dye molecules and superior light scattering capacity for boosting the light-harvesting efficiency. The present photovoltaic performance is the highest value for the reported TiO2 nanowires array photoelectrode. PMID:23443301

  15. Magnetic force microscopy study of the switching field distribution of low density arrays of single domain magnetic nanowires

    NASA Astrophysics Data System (ADS)

    Tabasum, M. R.; Zighem, F.; De La Torre Medina, J.; Encinas, A.; Piraux, L.; Nysten, B.

    2013-05-01

    In the present work, we report on the in situ magnetic force microscopy (MFM) study of the magnetization reversal in two-dimensional arrays of ferromagnetic Ni80Fe20 and Co55Fe45 nanowires (NW) with different diameters (40, 50, 70, and 100 nm) deposited inside low porosity (P < 1%) nanoporous polycarbonate membranes. In such arrays, the nanowires are sufficiently isolated from each other so that long range dipolar interactions can be neglected. The MFM experiments performed for different magnetization states at the same spot of the samples are analysed to determine the switching field distribution (SFD). The magnetization curves obtained from the MFM images are relatively square shaped. The SFD widths are narrower compared to those obtained for high density arrays. The weak broadening of the curves may be ascribed to the NW intrinsic SFD. The influence of diameter and composition of the ferromagnetic NW is also investigated.

  16. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  17. Optical simulations of P3HT/Si nanowire array hybrid solar cells.

    PubMed

    Wang, Wenbo; Li, Xinhua; Wen, Long; Zhao, Yufeng; Duan, Huahua; Zhou, Bukang; Shi, Tongfei; Zeng, Xuesong; Li, Ning; Wang, Yuqi

    2014-01-01

    An optical simulation of poly(3-hexylthiophene) (P3HT)/Si nanowire array (NWA) hybrid solar cells was investigated to evaluate the optical design requirements of the system by using finite-difference time-domain (FDTD) method. Steady improvement of light absorption was obtained with increased P3HT coating shell thickness from 0 to 80 nm on Si NWA. Further increasing the thickness caused dramatic decrease of the light absorption. Combined with the analysis of ultimate photocurrents, an optimum geometric structure with a coating P3HT thickness of 80 nm was proposed. At this structure, the hybrid solar cells show the most efficient light absorption. The optimization of the geometric structure and further understanding of the optical characteristics may contribute to the development for the practical experiment of the promising hybrid solar cells.

  18. Two-step epitaxial synthesis and layered growth mechanism of bisectional ZnO nanowire arrays

    NASA Astrophysics Data System (ADS)

    Wang, Wenduo; Zhang, Zheng; Liao, Qingliang; Yu, Tong; Shen, Yanwei; Li, Peifeng; Huang, Yunhua; Zhang, Yue

    2013-01-01

    Here a two-step epitaxial synthesis method of bisectional ZnO nanowire arrays (ZNWAs) on silicon substrates has been demonstrated incorporating hydrothermal growth (HG) and CVD process. The as-received well-aligned ZNWAs are confirmed to be single-crystal and growing along <001> direction, normal to the substrate. Interestingly, they show significant tapering behavior at the conjunctions, which is consistent with theoretical predictions. Therefore a layered growth mechanism is promoted involving the classical two-dimensional nucleation theory. In the proposed mechanism, the HG ZNWA provides nucleation sites for successive growth. The growth mechanism is verified by complementary investigation into conjunction morphology, which is dependent on regional Zn vapor pressure (ZVP) in the CVD process. Three types of conjunction morphologies are differentiated and the difference is explained with the growth model.

  19. Preparation of nickel nanowire arrays electrode for urea electro-oxidation in alkaline medium

    NASA Astrophysics Data System (ADS)

    Guo, Fen; Ye, Ke; Cheng, Kui; Wang, Guiling; Cao, Dianxue

    2015-03-01

    Fully metallic nickel nanowire arrays (NWAs) electrode is prepared by electrodepositing nickel within the pores and over-plating on the surface of polycarbonate template (PCT) with subsequent dissolution of the template in dichloromethane. The as-prepared electrode is characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Urea electro-oxidation reaction in KOH solution on the nickel NWAs electrode is investigated by cyclic voltammetry (CV), chronoamperometry (CA) and electrochemical impedance spectroscopy (EIS) tests. The results show that the nickel NWAs electrode achieves an onset oxidation potential of 0.25 V (vs. Ag/AgCl) and a peak current density of 160 mA cm-2 in 5 mol L-1 KOH and 0.33 mol L-1 urea accompanied with considerable stability.

  20. Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators

    SciTech Connect

    Xu, B. Fobelets, K.

    2014-06-07

    The output power of a silicon nanowire array (NWA)-bulk thermoelectric power generator (TEG) with Cu contacts is improved by spin-on-doping (SOD). The Si NWAs used in this work are fabricated via metal assisted chemical etching (MACE) of 0.01–0.02 Ω cm resistivity n- and p-type bulk, converting ~4% of the bulk thickness into NWs. The MACE process is adapted to ensure crystalline NWs. Current-voltage and Seebeck voltage-temperature measurements show that while SOD mainly influences the contact resistance in bulk, it influences both contact resistance and power factor in NWA-bulk based TEGs. According to our experiments, using Si NWAs in combination with SOD increases the output power by an order of 3 under the same heating power due to an increased power factor, decreased thermal conductivity of the NWA and reduced Si-Cu contact resistance.

  1. Catalase-like and peroxidase-like catalytic activities of silicon nanowire arrays.

    PubMed

    Wang, Hongwei; Jiang, Wenwen; Wang, Yanwei; Liu, Xiaoli; Yao, Jianlin; Yuan, Lin; Wu, Zhaoqiang; Li, Dan; Song, Bo; Chen, Hong

    2013-01-08

    Silicon nanowire arrays (SiNWAs) were found to have catalytic activities similar to those of biological enzymes catalase and peroxidase. Thus not only can these materials catalyze the decomposition reaction of H(2)O(2) into water and oxygen, but they can also catalyze the oxidation of o-phenylenediamine (OPD), a common substrate for peroxidases, by H(2)O(2). The presence of Si-H bonds and the morphology of the SiNWAs are found to be crucial to the occurrence of such catalytic activity. When the SiNWAs are reacted with H(2)O(2), the data from Raman spectroscopy suggests the formation of (Si-H)(2)···(O species) ((Si-H)(2)···Os), which is presumably responsible for the catalytic activity. These findings suggest the potential use of SiNWAs as enzyme mimics in medicine, biotechnology, and environmental chemistry.

  2. Interface nature of oxidized single-crystal arrays of etched Si nanowires on (100)Si

    NASA Astrophysics Data System (ADS)

    Jivanescu, M.; Stesmans, A.; Kurstjens, R.; Dross, F.

    2012-02-01

    Low temperature electron spin resonance studies have been carried out on single crystalline arrays of sub-10 nm Si nanowires (NWs) manufactured on (100)Si by top down etching and oxidation thinning. This reveals the presence of a substantial inherent density of Pb0 (Si3 ≡ Si•) defects (traps) at the NW Si/SiO2 interfaces, due to particular faceting and enhanced interface strain, leaving NW interfaces of reduced electrical quality. Perusal of the specific properties of the occurring Pb-type defect system points to a nanopillar morphology compatible with NWs predominantly bordered by {110} facets, with cross sectional shape of <100> truncated {110} squares. The inherent interface quality appears limited by the wire-narrowing thermal oxidation procedure.

  3. Ultralong Rutile TiO2 Nanowire Arrays for Highly Efficient Dye-Sensitized Solar Cells.

    PubMed

    Li, Hailiang; Yu, Qingjiang; Huang, Yuewu; Yu, Cuiling; Li, Renzhi; Wang, Jinzhong; Guo, Fengyun; Jiao, Shujie; Gao, Shiyong; Zhang, Yong; Zhang, Xitian; Wang, Peng; Zhao, Liancheng

    2016-06-01

    Vertically aligned rutile TiO2 nanowire arrays (NWAs) with lengths of ∼44 μm have been successfully synthesized on transparent, conductive fluorine-doped tin oxide (FTO) glass by a facile one-step solvothermal method. The length and wire-to-wire distance of NWAs can be controlled by adjusting the ethanol content in the reaction solution. By employing optimized rutile TiO2 NWAs for dye-sensitized solar cells (DSCs), a remarkable power conversion efficiency (PCE) of 8.9% is achieved. Moreover, in combination with a light-scattering layer, the performance of a rutile TiO2 NWAs based DSC can be further enhanced, reaching an impressive PCE of 9.6%, which is the highest efficiency for rutile TiO2 NWA based DSCs so far.

  4. Template-based synthesis and magnetic properties of Mn-Zn ferrite nanotube and nanowire arrays

    NASA Astrophysics Data System (ADS)

    Guo, Limin; Wang, Xiaohui; Zhong, Caifu; Li, Longtu

    2012-01-01

    Template-based electrophoretic deposition of Mn-Zn ferrite nanotubes (NTs) and nanowires (NWs) were achieved using anodic alumina oxide (AAO) membranes. The effect of electrophoretic current and deposition time on the morphology of the tubes was investigated. The samples show cubic spinel structure with no preferred orientation. Room-temperature magnetic properties of the Mn-Zn ferrite NT/NW arrays were studied. The magnetic easy axis parallels the NT/NW's channel axis attributing to the large shape anisotropy in this direction, especially for the NTs with a small wall thickness. Magnetocrystalline anisotropy and magnetostatic interactions were found dominant in the samples when applied field was perpendicular to the channel axis.

  5. A 64-channel readout ASIC for nanowire biosensor array with electrical calibration scheme.

    PubMed

    Chai, Kevin T C; Choe, Kunil; Bernal, Olivier D; Gopalakrishnan, Pradeep K; Zhang, Guo-Jun; Kang, Tae Goo; Je, Minkyu

    2010-01-01

    A 1.8-mW, 18.5-mm(2) 64-channel current readout ASIC was implemented in 0.18-µm CMOS together with a new calibration scheme for silicon nanowire biosensor arrays. The ASIC consists of 64 channels of dedicated readout and conditioning circuits which incorporate correlated double sampling scheme to reduce the effect of 1/f noise and offset from the analog front-end. The ASIC provides a 10-bit digital output with a sampling rate of 300 S/s whilst achieving a minimum resolution of 7 pA(rms). A new electrical calibration method was introduced to mitigate the issue of large variations in the nano-scale sensor device parameters and optimize the sensor sensitivity. The experimental results show that the proposed calibration technique improved the sensitivity by 2 to 10 times and reduced the variation between dataset by 9 times.

  6. Vertically aligned CdSe nanowire arrays for energy harvesting and piezotronic devices.

    PubMed

    Zhou, Yu Sheng; Wang, Kai; Han, Weihua; Rai, Satish Chandra; Zhang, Yan; Ding, Yong; Pan, Caofeng; Zhang, Fang; Zhou, Weilie; Wang, Zhong Lin

    2012-07-24

    We demonstrated the energy harvesting potential and piezotronic effect in vertically aligned CdSe nanowire (NW) arrays for the first time. The CdSe NW arrays were grown on a mica substrate by the vapor-liquid-solid process using a CdSe thin film as seed layer and platinum as catalyst. High-resolution transmission electron microscopy image and selected area electron diffraction pattern indicate that the CdSe NWs have a wurtzite structure and growth direction along (0001). Using conductive atomic force microscopy (AFM), an average output voltage of 30.7 mV and maximum of 137 mV were obtained. To investigate the effect of strain on electron transport, the current-voltage characteristics of the NWs were studied by positioning an AFM tip on top of an individual NW. By applying normal force/stress on the NW, the Schottky barrier between the Pt and CdSe was found to be elevated due to the piezotronic effect. With the change of strain of 0.12%, a current decreased from 84 to 17 pA at 2 V bias. This paper shows that the vertical CdSe NW array is a potential candidate for future piezo-phototronic devices.

  7. Synthesis and characterization of barium silicide (BaSi2) nanowire arrays for potential solar applications.

    PubMed

    Pokhrel, Ankit; Samad, Leith; Meng, Fei; Jin, Song

    2015-11-07

    In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs obtained by metal-assisted chemical etching were converted to single-crystalline BaSi2 NW arrays by reacting with Ba vapor at about 930 °C. Structural characterization by X-ray diffraction and high-resolution transmission electron microscopy confirm that the converted NWs are single-crystalline BaSi2. The optimal conversion reaction conditions allow the phase-pure synthesis of BaSi2 NWs that maintain the original NW morphology, and tuning the reaction parameters led to a controllable synthesis of BaSi2 films on silicon substrates. The optical bandgap and electrochemical measurements of these BaSi2 NWs reveal a bandgap and carrier concentrations comparable to previously reported values for BaSi2 thin films.

  8. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

    NASA Astrophysics Data System (ADS)

    Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas

    2017-03-01

    Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

  9. Design of coated standing nanowire array solar cell performing beyond the planar efficiency limits

    NASA Astrophysics Data System (ADS)

    Zeng, Yang; Ye, Qinghao; Shen, Wenzhong

    2016-05-01

    The single standing nanowire (SNW) solar cells have been proven to perform beyond the planar efficiency limits in both open-circuit voltage and internal quantum efficiency due to the built-in concentration and the shifting of the absorption front. However, the expandability of these nano-scale units to a macro-scale photovoltaic device remains unsolved. The main difficulty lies in the simultaneous preservation of an effective built-in concentration in each unit cell and a broadband high absorption capability of their array. Here, we have provided a detailed theoretical guideline for realizing a macro-scale solar cell that performs furthest beyond the planar limits. The key lies in a complementary design between the light-trapping of the single SNWs and that of the photonic crystal slab formed by the array. By tuning the hybrid HE modes of the SNWs through the thickness of a coaxial dielectric coating, the optimized coated SNW array can sustain an absorption rate over 97.5% for a period as large as 425 nm, which, together with the inherited carrier extraction advantage, leads to a cell efficiency increment of 30% over the planar limit. This work has demonstrated the viability of a large-size solar cell that performs beyond the planar limits.

  10. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.

    PubMed

    Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Wasisto, Hutomo Suryo; Waag, Andreas

    2017-03-03

    Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

  11. Fabricating vertically aligned sub-20 nm Si nanowire arrays by chemical etching and thermal oxidation.

    PubMed

    Li, Luping; Fang, Yin; Xu, Cheng; Zhao, Yang; Zang, Nanzhi; Jiang, Peng; Ziegler, Kirk J

    2016-04-22

    Silicon nanowires (SiNWs) are appealing building blocks in various applications, including photovoltaics, photonics, and sensors. Fabricating SiNW arrays with diameters <100 nm remains challenging through conventional top-down approaches. In this work, chemical etching and thermal oxidation are combined to fabricate vertically aligned, sub-20 nm SiNW arrays. Defect-free SiNWs with diameters between 95 and 200 nm are first fabricated by nanosphere (NS) lithography and chemical etching. The key aspects for defect-free SiNW fabrication are identified as: (1) achieving a high etching selectivity during NS size reduction; (2) retaining the circular NS shape with smooth sidewalls; and (3) using a directional metal deposition technique. SiNWs with identical spacing but variable diameters are demonstrated by changing the reactive ion etching power. The diameter of the SiNWs is reduced by thermal oxidation, where self-limiting oxidation is encountered after oxidizing the SiNWs at 950 °C for 1 h. A second oxidation is performed to achieve vertically aligned, sub-20 nm SiNW arrays. Si/SiO2 core/shell NWs are obtained before removing the oxidized shell. HRTEM imaging shows that the SiNWs have excellent crystallinity.

  12. Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

    PubMed

    Han, Ning; Yang, Zai-Xing; Wang, Fengyun; Yip, SenPo; Li, Dapan; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2016-06-28

    In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

  13. Ultrahigh-Responsivity Photodetectors from Perovskite Nanowire Arrays for Sequentially Tunable Spectral Measurement.

    PubMed

    Deng, Wei; Huang, Liming; Xu, Xiuzhen; Zhang, Xiujuan; Jin, Xiangcheng; Lee, Shuit-Tong; Jie, Jiansheng

    2017-04-12

    Compared with polycrystalline films, single-crystalline methylammonium lead halide (MAPbX3, X = halogen) perovskite nanowires (NWs) with well-defined structure possess superior optoelectronic properties for optoelectronic applications. However, most of the prepared perovskite NWs exhibit properties below expectations due to poor crystalline quality and rough surfaces. It also remains a challenge to achieve aligned growth of single-crystalline perovskite NWs for integrated device applications. Here, we report a facile fluid-guided antisolvent vapor-assisted crystallization (FGAVC) method for large-scale fabrication of high-quality single-crystalline MAPb(I1-xBrx)3 (x = 0, 0.1, 0.2, 0.3, 0.4) NW arrays. The resultant perovskite NWs showed smooth surfaces due to slow crystallization process and moisture-isolated growth environment. Significantly, photodetectors made from the NW arrays exhibited outstanding performance in respect of ultrahigh responsivity of 12 500 A W(-1), broad linear dynamic rang (LDR) of 150 dB, and robust stability. The responsivity represents the best value ever reported for perovskite-based photodetectors. Moreover, the spectral response of the MAPb(I1-xBrx)3 NW arrays could be sequentially tuned by varying the content of x = 0-0.4. On the basis of this feature, the NW arrays were monolithically integrated to form a unique system for directly measuring light wavelength. Our work would open a new avenue for the fabrication of high-performance, integrated optoelectronic devices from the perovskite NW arrays.

  14. Planar Gallium arsenide nanowire arrays for nanoelectronics: Controlled growth, doping, characterization, and devices

    NASA Astrophysics Data System (ADS)

    Dowdy, Ryan Stewart

    The Vapor-Liquid-Solid (VLS) mechanism is a bottom-up approach to produce onedimensional semiconductor structures, or nanowires. VLS nanowires are formed via a chemical or physical deposition process, where a metallic nanoparticle (seed) facilitates the growth. Nanowire growth diameter is strongly correlated to seed size, therefore top-down patterning can control site location and diameter of nanowire growth. Nanowires are sought after for their potential use as a manageable way produce small dimensioned semiconductor features without the need of expensive lithographic techniques. VLS nanowires commonly grow out-of-plane with respect to their growth substrate, resulting in difficulty with integrating VLS nanowires into existing device processing which is intended for planar geometries. Nanowires are typically removed from the substrate, which requires painstaking and uneconomical methods to pattern and align the nanowires. Planar nanowires are a potential solution to this issue; they grow in-plane on the substrate surface, epitaxially attached along its entire axis. Planar nanowires, as is, can be integrated into any preexisting planar semiconductor process, combining the advantages of nanowires with increased manufacturability. In this dissertation, planar GaAs nanowires are grown using metal organic chemical vapor deposition (MOCVD) with Au nanoparticles as the liquid metal seed. Growth occurs across multiple substrates to elucidate the mechanism behind planar nanowire growth direction. Knowledge gained by observing planar nanowire growth is used to precisely control nanowire growth direction. Subsequently the doping of planar nanowires is explored and unique phenomena related to the p-type doping of planar nanowires are investigated and discussed. The advantages of using planar nanowires are demonstrated through the controlled growth and doping of planar nanowires, and ultimately fabrication of electronic devices using conventional planar process techniques

  15. CdS/CdSe cosensitized oriented single-crystalline TiO2 nanowire array for solar cell application

    NASA Astrophysics Data System (ADS)

    Li, Ming; Liu, Yong; Wang, Hai; Shen, Hui; Zhao, Wenxia; Huang, Hong; Liang, Chaolun

    2010-11-01

    Vertically oriented single-crystalline TiO2 nanowires array was grown on transparent conductive oxide glass substrate, and then CdS and CdSe quantum dots (QDs) were deposited on nanowires to form a TiO2/CdS/CdSe core-shell structure films. The optical properties of films with different layers of QDs were compared. The QD sensitized solar cells (QD-SSCs) were assembled and the effect of coating cycles of QDs on the photovoltaic performance was investigated. Under optimum parameters, QD-SSCs assembled with 5 μm thick TiO2 nanowires film exhibited a short-circuit current density of 7.92 mA cm-2, an open-circuit voltage of 0.40 V, and a power conversion efficiency of 1.14%.

  16. Cu oxide nanowire array grown on Si-based SiO{sub 2} nanoscale islands via nanochannels

    SciTech Connect

    Mei, Y.F. . E-mail: meiyongfeng@nju.org.cn; Siu, G.G.; Yang, Y.; Fu, Ricky K.Y.; Hung, T.F.; Chu, Paul K.; Wu, X.L.

    2004-10-04

    Cu oxide nanowire array on Si-based SiO{sub 2} nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu{sub 2}O. The nanowires had a preferential growth direction (1 1 1) and connected with the nanoscale SiO{sub 2} islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu{sub 2}O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires.

  17. Highly Ordered Vertical Arrays of TiO2/ZnO Hybrid Nanowires: Synthesis and Electrochemical Characterization.

    PubMed

    Gujarati, Tanvi P; Ashish, Ajithan G; Rai, Maniratnam; Shaijumon, Manikoth M

    2015-08-01

    We report the fabrication of vertically aligned hierarchical arrays of TiO2/ZnO hybrid nanowires, consisting of ZnO nanowires grown directly from within the pores of TiO2 nanotubes, through a combination of electrochemical anodization and hydrothermal techniques. These novel nano-architectured hybrid nanowires with its unique properties show promise as high performance supercapacitor electrodes. The electrochemical behaviour of these hybrid nanowires has been studied using Cyclic voltammetry, Galvanostatic charge-discharge and Electrochemical impedance spectroscopy (EIS) measurements using 1.5 M tetraethylammoniumtetrafluoroborate in acetonitrile as the electrolyte. Excellent electrochemical performances with a maximum specific capacitance of 2.6 mF cm-2 at a current density of 10 µA cm-2, along with exceptional cyclic stability, have been obtained for TiO2/ZnO-1 h hybrid material. The obtained results demonstrate the possibility of fabricating new geometrical architectures of inorganic hybrid nanowires with well adhered interfaces for the development of hybrid energy devices.

  18. Magnetic behavior of as-deposited and annealed CoFe and CoFeCu nanowire arrays by ac-pulse electrodeposition

    NASA Astrophysics Data System (ADS)

    Ramazani, A.; Almasi-Kashi, M.; Golafshan, E.; Arefpour, M.

    2014-09-01

    CoFe and CoFeCu self-organized alloy nanowires were grown into anodic aluminum oxide template by potentiostatic mode of ac-pulse electrodeposition technique and subsequently annealed at 580 °C. The influence of bath composition, off-time between pulses and annealing treatment on the Cu content, microstructure and magnetic properties of CoFeCu nanowire arrays have been discussed. Increasing the off-time between pulses decreased the coercivity and saturation magnetization of the CoFeCu nanowires due to substitution of Co and Fe with Cu atoms which resulted in electroless process. Coercivity and squareness of the annealed samples increased due to improvement of samples crystallinity. Magnetic measurements showed high perpendicular magnetic anisotropy of the nanowires with easy axis parallel to nanowires axis. X-ray diffraction results indicated that annealed CoFeCu nanowires were polycrystalline with two distinct CoFe and Cu phases.

  19. Fabrication of CoFe2O4 ferrite nanowire arrays in porous silicon template and their local magnetic properties

    NASA Astrophysics Data System (ADS)

    Hui, Zheng; Man-Gui, Han; Long-Jiang, Deng

    2016-02-01

    CoFe2O4 ferrite nanowire arrays are fabricated in porous silicon templates. The porous silicon templates are prepared via metal-assisted chemical etching with gold (Au) nanoparticles as the catalyst. Subsequently, CoFe2O4 ferrite nanowires are successfully synthesized into porous silicon templates by the sol-gel method. The magnetic hysteresis loop of nanowire array shows an isotropic feature of magnetic properties. The coercivity and squareness ratio (Mr/Ms) of ensemble nanowires are found to be 630 Oe (1 Oe, = 79.5775 A·m-1 and 0.4 respectively. However, the first-order reversal curve (FORC) is adopted to reveal the probability density function of local magnetostatic properties (i.e., interwire interaction field and coercivity). The FORC diagram shows an obvious distribution feature for interaction field and coercivity. The local coercivity with a value of about 1000 Oe is found to have the highest probability. Project supported by the National Natural Science Foundation of China (Grant No. 61271039), the Scientific Projects of Sichuan Province, China (Grant No. 2015HH0016), and the Natural Science Foundations of Zhejiang Province, China (Grant Nos. LQ12E02001 and Y107255).

  20. Uniform Nickel Vanadate (Ni3V2O8) Nanowire Arrays Organized by Ultrathin Nanosheets with Enhanced Lithium Storage Properties

    PubMed Central

    Wang, Chang; Fang, Dong; Wang, Hong’en; Cao, Yunhe; Xu, Weilin; Liu, Xiaoqing; Luo, Zhiping; Li, Guangzhong; Jiang, Ming; Xiong, Chuanxi

    2016-01-01

    Development of three-dimensional nano-architectures on current collectors has emerged as an effective strategy for enhancing rate capability and cycling stability of the electrodes. Herein, a novel type of Ni3V2O8 nanowires, organized by ultrathin hierarchical nanosheets (less than 5 nm) on Ti foil, has been obtained by a two-step hydrothermal synthesis method. Studies on structural and thermal properties of the as-prepared Ni3V2O8 nanowire arrays are carried out and their morphology has changed obviously in the following heat treatment at 300 and 500 °C. As an electrode material for lithium ion batteries, the unique configuration of Ni3V2O8 nanowires presents enhanced capacitance, satisfying rate capability and good cycling stability. The reversible capacity of the as-prepared Ni3V2O8 nanowire arrays reaches 969.72 mAh·g−1 with a coulombic efficiency over 99% at 500 mA·g−1 after 500 cycles. PMID:26860692

  1. Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array.

    PubMed

    Dai, Yanmeng; Cai, Hongbing; Ding, Huaiyi; Ning, Zhen; Pan, Nan; Zhu, Hong; Shi, Qinwei; Wang, Xiaoping

    2015-04-06

    Metasurfaces made of subwavelength resonators can modify the wave front of light within the thickness much less than free space wavelength, showing great promises in integrated optics. In this paper, we theoretically show that electric and magnetic resonances supported simultaneously by a subwavelength nanowire with high refractive-index can be utilized to design metasurfaces with near-unity transmittance. Taking silicon nanowire for instance, we design numerically a near-infrared quarter-waveplate with high transmittance using a subwavelength nanowire array. The operation bandwidth of the waveplate is 0.14 μm around the center wavelength of 1.71 μm. The waveplate can convert a 45° linearly polarized incident light to circularly polarized light with conversion efficiency ranging from 94% to 98% over the operation band. The performance of quarter waveplate can in principle be tuned and improved through optimizing the parameters of nanowire arrays. Its compatibility to microelectronic technologies opens up a distinct possibility to integrate nanophotonics into the current silicon-based electronic devices.

  2. A nanoelectronic nose: a hybrid nanowire/carbon nanotube sensor array with integrated micromachined hotplates for sensitive gas discrimination

    NASA Astrophysics Data System (ADS)

    Chen, Po-Chiang; Ishikawa, Fumiaki N.; Chang, Hsiao-Kang; Ryu, Koungmin; Zhou, Chongwu

    2009-03-01

    A novel hybrid chemical sensor array composed of individual In2O3 nanowires, SnO2 nanowires, ZnO nanowires, and single-walled carbon nanotubes with integrated micromachined hotplates for sensitive gas discrimination was demonstrated. Key features of our approach include the integration of nanowire and carbon nanotube sensors, precise control of the sensor temperature using the micromachined hotplates, and the use of principal component analysis for pattern recognition. This sensor array was exposed to important industrial gases such as hydrogen, ethanol and nitrogen dioxide at different concentrations and sensing temperatures, and an excellent selectivity was obtained to build up an interesting 'smell-print' library of these gases. Principal component analysis of the sensing results showed great discrimination of those three tested chemicals, and in-depth analysis revealed clear improvement of selectivity by the integration of carbon nanotube sensors. This nanoelectronic nose approach has great potential for detecting and discriminating between a wide variety of gases, including explosive ones and nerve agents.

  3. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  4. Preparation of Ultrahigh-Density Magnetic Nanowire Arrays beyond 1 Terabit/Inch2 on Si Substrate Using Anodic Aluminum Oxide Template

    NASA Astrophysics Data System (ADS)

    Shimizu, Tomohiro; Aoki, Kazumo; Tanaka, Yoshinori; Terui, Toshifumi; Shingubara, Shoso

    2011-06-01

    Ultrahigh-density Co nanowire arrays were fabricated by the combined use of the anodic aluminum oxide (AAO) template formed on a Si substrate and pulse DC electrodeposition. The AAO templates were prepared with the anodic voltages from 3 to 40 V, whose diameters were from 15 to 40 nm. Using the AAO template with an anodic voltage less than 3 V, the wire density exceeded 2.88 Tbit/in.2. The magnetic property of the nanowire arrays indicated a strong perpendicular magnetic anisotropy, and we observed the tendency of increase in coercivity with decreasing nanowire diameter.

  5. Design and Implementation of Functional Nanoelectronic Interfaces With Biomolecules, Cells, and Tissue Using Nanowire Device Arrays

    PubMed Central

    Timko, Brian P.; Cohen-Karni, Tzahi; Qing, Quan; Tian, Bozhi; Lieber, Charles M.

    2010-01-01

    Nanowire FETs (NWFETs) are promising building blocks for nanoscale bioelectronic interfaces with cells and tissue since they are known to exhibit exquisite sensitivity in the context of chemical and biological detection, and have the potential to form strongly coupled interfaces with cell membranes. We present a general scheme that can be used to assemble NWs with rationally designed composition and geometry on either planar inorganic or biocompatible flexible plastic surfaces. We demonstrate that these devices can be used to measure signals from neurons, cardiomyocytes, and heart tissue. Reported signals are in millivolts range, which are equal to or substantially greater than those recorded with either planar FETs or multielectrode arrays, and demonstrate one unique advantage of NW-based devices. Basic studies showing the effect of device sensitivity and cell/substrate junction quality on signal magnitude are presented. Finally, our demonstrated ability to design high-density arrays of NWFETs enables us to map signal at the subcellular level, a functionality not enabled by conventional microfabricated devices. These advances could have broad applications in high-throughput drug assays, fundamental biophysical studies of cellular function, and development of powerful prosthetics. PMID:21785576

  6. Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire

    NASA Astrophysics Data System (ADS)

    Wang, Renjie; Ra, Yong-Ho; Wu, Yuanpeng; Zhao, Songrui; Nguyen, Hieu P. T.; Shih, Ishiang; Mi, Zetian

    2016-02-01

    The monolithic integration of red, green and blue (RGB) GaN-based light-emitting diodes (LEDs) directly on a single chip is critically important for smart lighting and full color display applications. In this work, RGB InGaN/GaN dot-in-a-wire LED arrays were laterally arranged on a Si wafer using a three-step SiOx-mask selective area growth (SAG) technique, and on a sapphire wafer using a Ti-mask SAG technique. Tunable emission across the entire visible spectral range (~ 450 nm to 700 nm) can be readily achieved on a single Si wafer by varying the sizes and/or compositions of the dots. By separately biasing lateral-arranged multi-color LED subpixels, the correlated color temperature (CCT) values of such a ~ 0.016 mm2 pixel can be varied from ~ 1900 K to 6800 K. The RGB pixel size can be further reduced by using the Ti-mask SAG technique on sapphire wafer. Full-color InGaN/GaN nanowire arrays with sizes of 2.8 × 2.8 μm2 have been monolithically fabricated into the same pixel.

  7. Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

    SciTech Connect

    Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

  8. Nanowire array chips for molecular typing of rare trafficking leukocytes with application to neurodegenerative pathology

    NASA Astrophysics Data System (ADS)

    Kwak, Minsuk; Kim, Dong-Joo; Lee, Mi-Ri; Wu, Yu; Han, Lin; Lee, Sang-Kwon; Fan, Rong

    2014-05-01

    Despite the presence of the blood-brain barrier (BBB) that restricts the entry of immune cells and mediators into the central nervous system (CNS), a small number of peripheral leukocytes can traverse the BBB and infiltrate into the CNS. The cerebrospinal fluid (CSF) is one of the major routes through which trafficking leukocytes migrate into the CNS. Therefore, the number of leukocytes and their phenotypic compositions in the CSF may represent important sources to investigate immune-to-brain interactions or diagnose and monitor neurodegenerative diseases. Due to the paucity of trafficking leucocytes in the CSF, a technology capable of efficient isolation, enumeration, and molecular typing of these cells in the clinical settings has not been achieved. In this study, we report on a biofunctionalized silicon nanowire array chip for highly efficient capture and multiplexed phenotyping of rare trafficking leukocytes in small quantities (50 microliters) of clinical CSF specimens collected from neurodegenerative disease patients. The antibody coated 3D nanostructured materials exhibited vastly improved rare cell capture efficiency due to high-affinity binding and enhanced cell-substrate interactions. Moreover, our platform creates multiple cell capture interfaces, each of which can selectively isolate specific leukocyte phenotypes. A comparison with the traditional immunophenotyping using flow cytometry demonstrated that our novel silicon nanowire-based rare cell analysis platform can perform rapid detection and simultaneous molecular characterization of heterogeneous immune cells. Multiplexed molecular typing of rare leukocytes in CSF samples collected from Alzheimer's disease patients revealed the elevation of white blood cell counts and significant alterations in the distribution of major leukocyte phenotypes. Our technology represents a practical tool for potentially diagnosing and monitoring the pathogenesis of neurodegenerative diseases by allowing an effective

  9. Flexible Near-Infrared Photovoltaic Devices Based on Plasmonic Hot-Electron Injection into Silicon Nanowire Arrays.

    PubMed

    Liu, Dong; Yang, Dong; Gao, Yang; Ma, Jun; Long, Ran; Wang, Chengming; Xiong, Yujie

    2016-03-24

    The development of flexible near-infrared (NIR) photovoltaic (PV) devices containing silicon meets the strong demands for solar utilization, portability, and sustainable manufacture; however, improvements in the NIR light absorption and conversion efficiencies in ultrathin crystalline Si are required. We have developed an approach to improve the quantum efficiency of flexible PV devices in the NIR spectral region by integrating Si nanowire arrays with plasmonic Ag nanoplates. The Ag nanoplates can directly harvest and convert NIR light into plasmonic hot electrons for injection into Si, while the Si nanowire arrays offer light trapping. Taking the wavelength of 800 nm as an example, the external quantum efficiency has been improved by 59 % by the integration Ag nanoplates. This work provides an alternative strategy for the design and fabrication of flexible NIR PVs.

  10. Significantly Enhanced Visible Light Photoelectrochemical Activity in TiO₂ Nanowire Arrays by Nitrogen Implantation.

    PubMed

    Wang, Gongming; Xiao, Xiangheng; Li, Wenqing; Lin, Zhaoyang; Zhao, Zipeng; Chen, Chi; Wang, Chen; Li, Yongjia; Huang, Xiaoqing; Miao, Ling; Jiang, Changzhong; Huang, Yu; Duan, Xiangfeng

    2015-07-08

    Titanium oxide (TiO2) represents one of most widely studied materials for photoelectrochemical (PEC) water splitting but is severely limited by its poor efficiency in the visible light range. Here, we report a significant enhancement of visible light photoactivity in nitrogen-implanted TiO2 (N-TiO2) nanowire arrays. Our systematic studies show that a post-implantation thermal annealing treatment can selectively enrich the substitutional nitrogen dopants, which is essential for activating the nitrogen implanted TiO2 to achieve greatly enhanced visible light photoactivity. An incident photon to electron conversion efficiency (IPCE) of ∼10% is achieved at 450 nm in N-TiO2 without any other cocatalyst, far exceeding that in pristine TiO2 nanowires (∼0.2%). The integration of oxygen evolution reaction (OER) cocatalyst with N-TiO2 can further increase the IPCE at 450 nm to ∼17% and deliver an unprecedented overall photocurrent density of 1.9 mA/cm(2), by integrating the IPCE spectrum with standard AM 1.5G solar spectrum. Systematic photoelectrochemical and electrochemical studies demonstrated that the enhanced PEC performance can be attributed to the significantly improved visible light absorption and more efficient charge separation. Our studies demonstrate the implantation approach can be used to reliably dope TiO2 to achieve the best performed N-TiO2 photoelectrodes to date and may be extended to fundamentally modify other semiconductor materials for PEC water splitting.

  11. Nanowire array chips for molecular typing of rare trafficking leukocytes with application to neurodegenerative pathology.

    PubMed

    Kwak, Minsuk; Kim, Dong-Joo; Lee, Mi-Ri; Wu, Yu; Han, Lin; Lee, Sang-Kwon; Fan, Rong

    2014-06-21

    Despite the presence of the blood-brain barrier (BBB) that restricts the entry of immune cells and mediators into the central nervous system (CNS), a small number of peripheral leukocytes can traverse the BBB and infiltrate into the CNS. The cerebrospinal fluid (CSF) is one of the major routes through which trafficking leukocytes migrate into the CNS. Therefore, the number of leukocytes and their phenotypic compositions in the CSF may represent important sources to investigate immune-to-brain interactions or diagnose and monitor neurodegenerative diseases. Due to the paucity of trafficking leucocytes in the CSF, a technology capable of efficient isolation, enumeration, and molecular typing of these cells in the clinical settings has not been achieved. In this study, we report on a biofunctionalized silicon nanowire array chip for highly efficient capture and multiplexed phenotyping of rare trafficking leukocytes in small quantities (50 microliters) of clinical CSF specimens collected from neurodegenerative disease patients. The antibody coated 3D nanostructured materials exhibited vastly improved rare cell capture efficiency due to high-affinity binding and enhanced cell-substrate interactions. Moreover, our platform creates multiple cell capture interfaces, each of which can selectively isolate specific leukocyte phenotypes. A comparison with the traditional immunophenotyping using flow cytometry demonstrated that our novel silicon nanowire-based rare cell analysis platform can perform rapid detection and simultaneous molecular characterization of heterogeneous immune cells. Multiplexed molecular typing of rare leukocytes in CSF samples collected from Alzheimer's disease patients revealed the elevation of white blood cell counts and significant alterations in the distribution of major leukocyte phenotypes. Our technology represents a practical tool for potentially diagnosing and monitoring the pathogenesis of neurodegenerative diseases by allowing an effective

  12. A high performance three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection.

    PubMed

    Xu, Chenlong; Song, Zhiqian; Xiang, Qun; Jin, Jian; Feng, Xinjian

    2016-04-14

    We describe here a high performance oxygen-rich three-phase enzyme electrode based on superhydrophobic mesoporous silicon nanowire arrays for glucose detection. We demonstrate that its linear detection upper limit is 30 mM, more than 15 times higher than that can be obtained on the normal enzyme-electrode. Notably, the three-phase enzyme electrode output is insensitive to the significant oxygen level fluctuation in analyte solution.

  13. Fabrication and optical property of metal nanowire arrays embedded in anodic porous alumina membrane

    NASA Astrophysics Data System (ADS)

    Takase, Kouichi; Shimizu, Tomohiro; Sugawa, Kosuke; Aono, Takashige; Shirai, Yuma; Nishida, Tomohiko; Shingubara, Shoso

    2016-06-01

    Nanowires embedded in nanopores are potentially tough against surface scraping and agglomeration. In this study, we have fabricated Au and Ni nanowires embedded into anodic porous alumina (APA) and investigated their reflectance to study the effects of surface plasmon absorption properties and conversion from solar energy to thermal energy. Au nanowires embedded into APA show typical gold surface plasmon absorption at approximately 530 nm. On the other hand, Ni nanowires show quite a low reflectance under 600 nm. In the temperature elevation test, both Au and Ni nanowire samples present the same capability to warm up water. It means that Ni nanowires embedded into APA have almost the same photothermal activity as Au nanowires.

  14. Highly ordered MnO{sub 2} nanowire array thin films on Ti/Si substrate as an electrode for electrochemical capacitor

    SciTech Connect

    Xu Cailing . E-mail: xucl01@163.com; Bao Shujuan; Kong Lingbin; Li Hua; Li Hulin . E-mail: lihl@lzu.edu.cn

    2006-05-15

    AAO/Ti/Si substrate was successfully synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow nanowire arrays. The ordered MnO{sub 2} nanowire arrays with about 40 nm diameters had been directly fabricated on AAO/Ti/Si substrate by direct current (DC) electrodeposition. The microstructure of the nanowire arrays was investigated by field-emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Their electrochemical characterization was performed using cyclic voltammetry in 0.5 M Na{sub 2}SO{sub 4} aqueous solution. The synthesized MnO{sub 2} nanowires had amorphous nature until 400 deg. C. The deal capacitive behavior was obtained when the as-prepared sample was heat-treated at 200 deg. C. The specific capacitance of the electrode was about 254 F/g.

  15. Binder-free Co3O4@NiCoAl-layered double hydroxide core-shell hybrid architectural nanowire arrays with enhanced electrochemical performance

    NASA Astrophysics Data System (ADS)

    Li, Xuan; Yang, Zhengchun; Qi, Wen; Li, Yutao; Wu, Ying; Zhou, Shaoxiong; Huang, Shengming; Wei, Jun; Li, Huijun; Yao, Pei

    2016-02-01

    Herein, binder-free Co3O4@NiCoAl-layered double hydroxide (Co3O4@LDH) core-shell hybrid architectural nanowire arrays were prepared via a two-step hydrothermal synthesis route. LDH nanosheets possessing a large electroactive surface area uniformly dispersed on the surface of Co3O4 nanowires were successfully fabricated allowing for fast electron transport that enhances the electrochemical performance of LDH nanosheets. Co3O4@LDH nanowire arrays of 2 to 1.5 molar ratio (Co3O4:LDH) exhibit high specific capacitance (1104 F g-1 at 1 A g-1), adequate rate capability and cycling stability (87.3% after 5000 cycles), attributed to the synergistic effect between the robust Co3O4 nanowire arrays and LDH nanosheets.

  16. Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4.

    PubMed

    Shi, Liang; Pei, Congjian; Xu, Yeming; Li, Quan

    2011-07-13

    Highly ordered quaternary semiconductor Cu(2)ZnSnS(4) nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [110] or [111] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu(2)ZnSnS(4) samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu(2)ZnSnSe(4) nanowire array with similar structural characteristics can also be obtained.

  17. Piezo-generator integrating a vertical array of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Jamond, N.; Chrétien, P.; Houzé, F.; Lu, L.; Largeau, L.; Maugain, O.; Travers, L.; Harmand, J. C.; Glas, F.; Lefeuvre, E.; Tchernycheva, M.; Gogneau, N.

    2016-08-01

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ˜12.7 mW cm-3. This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  18. Piezo-generator integrating a vertical array of GaN nanowires.

    PubMed

    Jamond, N; Chrétien, P; Houzé, F; Lu, L; Largeau, L; Maugain, O; Travers, L; Harmand, J C; Glas, F; Lefeuvre, E; Tchernycheva, M; Gogneau, N

    2016-08-12

    We demonstrate the first piezo-generator integrating a vertical array of GaN nanowires (NWs). We perform a systematic multi-scale analysis, going from single wire properties to macroscopic device fabrication and characterization, which allows us to establish for GaN NWs the relationship between the material properties and the piezo-generation, and to propose an efficient piezo-generator design. The piezo-conversion of individual MBE-grown p-doped GaN NWs in a dense array is assessed by atomic force microscopy (AFM) equipped with a Resiscope module yielding an average output voltage of 228 ± 120 mV and a maximum value of 350 mV generated per NW. In the case of p-doped GaN NWs, the piezo-generation is achieved when a positive piezo-potential is created inside the nanostructures, i.e. when the NWs are submitted to compressive deformation. The understanding of the piezo-generation mechanism in our GaN NWs, gained from AFM analyses, is applied to design a piezo-generator operated under compressive strain. The device consists of NW arrays of several square millimeters in size embedded into spin-on glass with a Schottky contact for rectification and collection of piezo-generated carriers. The generator delivers a maximum power density of ∼12.7 mW cm(-3). This value sets the new state of the art for piezo-generators based on GaN NWs and more generally on nitride NWs, and offers promising prospects for the use of GaN NWs as high-efficiency ultra-compact energy harvesters.

  19. Magnetic and Distribution of Magnetic Moments in Amorphous Fe89.7 P10.3 Alloy Nanowire Arrays

    NASA Astrophysics Data System (ADS)

    Shi, Hui-Gang; Xue, De-Sheng

    2008-01-01

    Binary amorphous Fe89.7P10.3 alloy nanowire arrays in diameter of about 40nm and length of about 3 μm have been fabricated in an anodic aluminium oxide template by electrodeposition. Magnetic properties of the samples are investigated by mean of vibrating sample magnetometer, transmission Mössbauer spectroscopy and conversion electron Mössbauer spectroscopy at room temperature. It is found that the nanowire arrays have obvious perpendicular magnetic anisotropy and are ferromagnetic at room temperature, with its Mössbauer spectra consisting of six broad lines. The average angles between the Fe magnetic moment and the wire axis are about 14° inside and 28° at the end of the amorphous Fe89.7P10.3 alloy nanowire arrays, respectively. The magnetic behaviour is decided by the shape anisotropy and the dipolar interaction between wires. In addition, the magnetic moments distribution is theoretically demonstrated by using the symmetric fanning mechanism of the spheres chain model.

  20. High Density Individually Addressable Nanowire Arrays Record Intracellular Activity from Primary Rodent and Human Stem Cell Derived Neurons.

    PubMed

    Liu, Ren; Chen, Renjie; Elthakeb, Ahmed T; Lee, Sang Heon; Hinckley, Sandy; Khraiche, Massoud L; Scott, John; Pre, Deborah; Hwang, Yoontae; Tanaka, Atsunori; Ro, Yun Goo; Matsushita, Albert K; Dai, Xing; Soci, Cesare; Biesmans, Steven; James, Anthony; Nogan, John; Jungjohann, Katherine L; Pete, Douglas V; Webb, Denise B; Zou, Yimin; Bang, Anne G; Dayeh, Shadi A

    2017-04-10

    We report a new hybrid integration scheme that offers for the first time a nanowire-on-lead approach, which enables independent electrical addressability, is scalable, and has superior spatial resolution in vertical nanowire arrays. The fabrication of these nanowire arrays is demonstrated to be scalable down to submicrometer site-to-site spacing and can be combined with standard integrated circuit fabrication technologies. We utilize these arrays to perform electrophysiological recordings from mouse and rat primary neurons and human induced pluripotent stem cell (hiPSC)-derived neurons, which revealed high signal-to-noise ratios and sensitivity to subthreshold postsynaptic potentials (PSPs). We measured electrical activity from rodent neurons from 8 days in vitro (DIV) to 14 DIV and from hiPSC-derived neurons at 6 weeks in vitro post culture with signal amplitudes up to 99 mV. Overall, our platform paves the way for longitudinal electrophysiological experiments on synaptic activity in human iPSC based disease models of neuronal networks, critical for understanding the mechanisms of neurological diseases and for developing drugs to treat them.