Telemedicine optoelectronic biomedical data processing system
NASA Astrophysics Data System (ADS)
Prosolovska, Vita V.
2010-08-01
The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; Kniffin, Scott D.; LaBel, Kenneth A.; OBryan, Martha V.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Poivey, Christian; Buchner, Stephen P.; Marshall, Cheryl J.
2004-01-01
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACS), among others.
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; Kniffin, Scott D.; LaBel, Kenneth A.; OBryan, Martha V.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Poivey, Christian; Buchner, Stephen P.; Marshall, Cheryl J.
2003-01-01
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others.
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; Buchner, Stephen P.; Irwin, Tim L.; LaBel, Kenneth A.; Marshall, Cheryl J.; Reed, Robert A.; Sanders, Anthony B.; Hawkins, Donald K.; Flanigan, Ryan J.; Cox, Stephen R.
2005-01-01
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to- Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others. T
Recent Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics
NASA Technical Reports Server (NTRS)
OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Buchner, Stephen P.; Barth, Janet L.; Kniffen, Scott D.; Seidleck, Christina M.; Marshall, Cheryl J.;
2001-01-01
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
Current Single Event Effects and Radiation Damage Results for Candidate Spacecraft Electronics
NASA Technical Reports Server (NTRS)
OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Ladbury, Ray L.; Howard, James W., Jr.; Kniffin, Scott D.; Poivey, Christian; Buchner, Stephen P.; Bings, John P.; Titus, Jeff L.
2002-01-01
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
NASA Technical Reports Server (NTRS)
Topper, Alyson D.; Campola, Michael J.; Chen, Dakai; Casey, Megan C.; Yau, Ka-Yen; Cochran, Donna J.; Label, Kenneth A.; Ladbury, Raymond L.; Mondy, Timothy K.; O'Bryan, Martha V.;
2017-01-01
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices. Displacement Damage, Optoelectronics, Proton Damage, Single Event Effects, and Total Ionizing Dose.
Silicon Schottky Diode Safe Operating Area
NASA Technical Reports Server (NTRS)
Casey, Megan C.; Campola, Michael J.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Phan, Anthony M.; LaBel, Kenneth A.
2016-01-01
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
NASA Astrophysics Data System (ADS)
Sun, Degui; Wang, Na-Xin; He, Li-Ming; Weng, Zhao-Heng; Wang, Daheng; Chen, Ray T.
1996-06-01
A space-position-logic-encoding scheme is proposed and demonstrated. This encoding scheme not only makes the best use of the convenience of binary logic operation, but is also suitable for the trinary property of modified signed- digit (MSD) numbers. Based on the space-position-logic-encoding scheme, a fully parallel modified signed-digit adder and subtractor is built using optoelectronic switch technologies in conjunction with fiber-multistage 3D optoelectronic interconnects. Thus an effective combination of a parallel algorithm and a parallel architecture is implemented. In addition, the performance of the optoelectronic switches used in this system is experimentally studied and verified. Both the 3-bit experimental model and the experimental results of a parallel addition and a parallel subtraction are provided and discussed. Finally, the speed ratio between the MSD adder and binary adders is discussed and the advantage of the MSD in operating speed is demonstrated.
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; Boutte, Alvin J.; Chen, Dakai; Pellish, Jonathan A.; Ladbury, Raymond L.; Casey, Megan C.; Campola, Michael J.; Wilcox, Edward P.; Obryan, Martha V.; LaBel, Kenneth A.;
2012-01-01
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.
Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; Chen, Dakai; Oldham, Timothy R.; Sanders, Anthony B.; Kim, Hak S.; Campola, Michael J.; Buchner, Stephen P.; LaBel, Kenneth A.; Marshall, Cheryl J.; Pellish, Jonathan A.;
2010-01-01
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; Boutte, Alvin J.; Campola, Michael J.; Carts, Martin A.; Casey, Megan C.; Chen, Dakai; LaBel, Kenneth A.; Ladbury, Raymond L.; Lauenstein, Jean-Marie; Marshall, Cheryl J.;
2011-01-01
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
NASA Technical Reports Server (NTRS)
Cochran, Donna J.; O'Bryan, Martha V.; Buchner, Stephen P.; Poivey, Christian; Ladbury, Ray L.; LaBel, Kenneth A.
2007-01-01
Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics
NASA Technical Reports Server (NTRS)
OBryan, Martha V.; LaBel, Kenneth A.; Reed, Robert A.; Howard, James W., Jr.; Ladbury, Ray L.; Barth, Janet L.; Kniffin, Scott D.; Seidleck, Christina M.; Marshall, Paul W.; Marshall, Cheryl J.;
2000-01-01
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003-0.33 Rads(Si)/s). Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog to Digital Converters (ADCs), Digital to Analog Converters (DACs), and DC-DC converters, among others.
Standard cell-based implementation of a digital optoelectronic neural-network hardware.
Maier, K D; Beckstein, C; Blickhan, R; Erhard, W
2001-03-10
A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.
NASA Astrophysics Data System (ADS)
Fischer, R.; Müller, R.
1989-08-01
It is shown that nonlinear optical devices are the most promising elements for an optical digital supercomputer. The basic characteristics of various developed nonlinear elements are presented, including bistable Fabry-Perot etalons, interference filters, self-electrooptic effect devices, quantum-well devices utilizing transitions between the lowest electron states in the conduction band of GaAs, etc.
Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA GSFC and NEPP
NASA Technical Reports Server (NTRS)
Topper, Alyson D.; Campola, Michael J.; Chen, Dakai; Casey, Megan C.; Yau, Ka-Yen; Label, Kenneth A.; Cochran, Donna J.; O'Bryan, Martha V.
2017-01-01
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
Active stabilization of a rapidly chirped laser by an optoelectronic digital servo-loop control.
Gorju, G; Jucha, A; Jain, A; Crozatier, V; Lorgeré, I; Le Gouët, J-L; Bretenaker, F; Colice, M
2007-03-01
We propose and demonstrate a novel active stabilization scheme for wide and fast frequency chirps. The system measures the laser instantaneous frequency deviation from a perfectly linear chirp, thanks to a digital phase detection process, and provides an error signal that is used to servo-loop control the chirped laser. This way, the frequency errors affecting a laser scan over 10 GHz on the millisecond timescale are drastically reduced below 100 kHz. This active optoelectronic digital servo-loop control opens new and interesting perspectives in fields where rapidly chirped lasers are crucial.
NASA Astrophysics Data System (ADS)
Odinokov, S. B.; Petrov, A. V.
1995-10-01
Mathematical models of components of a vector-matrix optoelectronic multiplier are considered. Perturbing factors influencing a real optoelectronic system — noise and errors of radiation sources and detectors, nonlinearity of an analogue—digital converter, nonideal optical systems — are taken into account. Analytic expressions are obtained for relating the precision of such a multiplier to the probability of an error amounting to one bit, to the parameters describing the quality of the multiplier components, and to the quality of the optical system of the processor. Various methods of increasing the dynamic range of a multiplier are considered at the technical systems level.
Parallel optoelectronic trinary signed-digit division
NASA Astrophysics Data System (ADS)
Alam, Mohammad S.
1999-03-01
The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.
DOC II 32-bit digital optical computer: optoelectronic hardware and software
NASA Astrophysics Data System (ADS)
Stone, Richard V.; Zeise, Frederick F.; Guilfoyle, Peter S.
1991-12-01
This paper describes current electronic hardware subsystems and software code which support OptiComp's 32-bit general purpose digital optical computer (DOC II). The reader is referred to earlier papers presented in this section for a thorough discussion of theory and application regarding DOC II. The primary optoelectronic subsystems include the drive electronics for the multichannel acousto-optic modulators, the avalanche photodiode amplifier, as well as threshold circuitry, and the memory subsystems. This device utilizes a single optical Boolean vector matrix multiplier and its VME based host controller interface in performing various higher level primitives. OptiComp Corporation wishes to acknowledge the financial support of the Office of Naval Research, the National Aeronautics and Space Administration, the Rome Air Development Center, and the Strategic Defense Initiative Office for the funding of this program under contracts N00014-87-C-0077, N00014-89-C-0266 and N00014-89-C- 0225.
NASA Technical Reports Server (NTRS)
Topper, Alyson D.; Campola, Michael J.; Chen, Dakai; Casey, Megan C.; Yau, Ka-Yen; Cochran, Donna J.; LaBel, Kenneth A.; Ladbury, Raymond L.; Lauenstein, Jean-Marie; Mondy, Timothy K.;
2017-01-01
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Qian, F; Li, G; Ruan, H; Jing, H; Liu, L
1999-09-10
A novel, to our knowledge, two-step digit-set-restricted modified signed-digit (MSD) addition-subtraction algorithm is proposed. With the introduction of the reference digits, the operand words are mapped into an intermediate carry word with all digits restricted to the set {1, 0} and an intermediate sum word with all digits restricted to the set {0, 1}, which can be summed to form the final result without carry generation. The operation can be performed in parallel by use of binary logic. An optical system that utilizes an electron-trapping device is suggested for accomplishing the required binary logic operations. By programming of the illumination of data arrays, any complex logic operations of multiple variables can be realized without additional temporal latency of the intermediate results. This technique has a high space-bandwidth product and signal-to-noise ratio. The main structure can be stacked to construct a compact optoelectronic MSD adder-subtracter.
Optoelectronic frequency discriminated phase tuning technology and its applications
NASA Astrophysics Data System (ADS)
Lin, Gong-Ru; Chang, Yung-Cheng
2000-07-01
By using a phase-tunable optoelectronic phase-locked loop, we are able to continuously change the phase as well as the delay-time of optically distributed microwave clock signals or optical pulse train. The advantages of the proposed technique include such as wide-band operation up to 20GHz, wide-range tuning up to 640 degrees, high tuning resolution of <6x10-2 degree/mV, ultra-low short-term phase fluctuation and drive of 4.7x10-2 degree and 3.4x10- 3 degree/min, good linearity with acceptable deviations, and frequency-independent transferred function with slope of nearly 90 degrees/volt, etc. The novel optoelectronic phase shifter is performed by using a DC-voltage controlled, optoelectronic-mixer-based, frequency-down-converted digital phase-locked-loop. The maximum delay-time is continuously tunable up to 3.9 ns for optical pulses repeated at 500 MHz from a gain-switched laser diode. This corresponds to a delay responsivity of about 0.54 ps/mV. The using of the OEPS as being an optoelectronic delay-time controller for optical pulses is demonstrated with temporal resolution of <0.2 ps. Electro-optic sampling of high-frequency microwave signals by using the in-situ delay-time-tunable pulsed laser as a novel optical probe is primarily reported.
Optoelectronic scanning system upgrade by energy center localization methods
NASA Astrophysics Data System (ADS)
Flores-Fuentes, W.; Sergiyenko, O.; Rodriguez-Quiñonez, J. C.; Rivas-López, M.; Hernández-Balbuena, D.; Básaca-Preciado, L. C.; Lindner, L.; González-Navarro, F. F.
2016-11-01
A problem of upgrading an optoelectronic scanning system with digital post-processing of the signal based on adequate methods of energy center localization is considered. An improved dynamic triangulation analysis technique is proposed by an example of industrial infrastructure damage detection. A modification of our previously published method aimed at searching for the energy center of an optoelectronic signal is described. Application of the artificial intelligence algorithm of compensation for the error of determining the angular coordinate in calculating the spatial coordinate through dynamic triangulation is demonstrated. Five energy center localization methods are developed and tested to select the best method. After implementation of these methods, digital compensation for the measurement error, and statistical data analysis, a non-parametric behavior of the data is identified. The Wilcoxon signed rank test is applied to improve the result further. For optical scanning systems, it is necessary to detect a light emitter mounted on the infrastructure being investigated to calculate its spatial coordinate by the energy center localization method.
Sun, Wei; Tan, Chee-Keong; Tansu, Nelson
2017-07-27
The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.
Lipid Bilayer-Integrated Optoelectronic Tweezers for Nanoparticle Manipulations
2013-01-01
intensities of ∼5 W/cm2 using a digital micromirror device (Texas Instruments, TX, USA). Figure 4a shows the overlapped image of the projected light...CMMI- 1120724). ■ ABBREVIATIONS ITO, indium tin oxide:; a-Si:H, hydrogenated amorphous silicon:; DMD, digital micromirror device; SLB, supported lipid
NASA Astrophysics Data System (ADS)
Zhao, Ziyue; Gan, Xiaochuan; Zou, Zhi; Ma, Liqun
2018-01-01
The dynamic envelope measurement plays very important role in the external dimension design for high-speed train. Recently there is no digital measurement system to solve this problem. This paper develops an optoelectronic measurement system by using monocular digital camera, and presents the research of measurement theory, visual target design, calibration algorithm design, software programming and so on. This system consists of several CMOS digital cameras, several luminous targets for measuring, a scale bar, data processing software and a terminal computer. The system has such advantages as large measurement scale, high degree of automation, strong anti-interference ability, noise rejection and real-time measurement. In this paper, we resolve the key technology such as the transformation, storage and calculation of multiple cameras' high resolution digital image. The experimental data show that the repeatability of the system is within 0.02mm and the distance error of the system is within 0.12mm in the whole workspace. This experiment has verified the rationality of the system scheme, the correctness, the precision and effectiveness of the relevant methods.
NASA Astrophysics Data System (ADS)
Vacas-Jacques, Paulino; Linnes, Jacqueline; Young, Anna; Gerrard, Victoria; Gomez-Marquez, Jose
2014-03-01
Innovations in international health require the use of state-of-the-art technology to enable clinical chemistry for diagnostics of bodily fluids. We propose the implementation of a portable and affordable lock-in amplifier-based instrument that employs digital technology to perform biochemical diagnostics on blood, urine, and other fluids. The digital instrument is composed of light source and optoelectronic sensor, lock-in detection electronics, microcontroller unit, and user interface components working with either power supply or batteries. The instrument performs lock-in detection provided that three conditions are met. First, the optoelectronic signal of interest needs be encoded in the envelope of an amplitude-modulated waveform. Second, the reference signal required in the demodulation channel has to be frequency and phase locked with respect to the optoelectronic carrier signal. Third, the reference signal should be conditioned appropriately. We present three approaches to condition the signal appropriately: high-pass filtering the reference signal, precise offset tuning the reference level by low-pass filtering, and by using a voltage divider network. We assess the performance of the lock-in instrument by comparing it to a benchmark device and by determining protein concentration with single-color absorption measurements. We validate the concentration values obtained with the proposed instrument using chemical concentration measurements. Finally, we demonstrate that accurate retrieval of phase information can be achieved by using the same instrument.
Wrapped optoelectronic devices and methods for making same
DOE Office of Scientific and Technical Information (OSTI.GOV)
Curran, Seamus; Dias, Sampath; Alley, Nigel
In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively,more » the optoelectronic devices may be organic light emitting diodes.« less
Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers
NASA Astrophysics Data System (ADS)
Barton, Jonathon S.; Skogen, Erik J.; Masanovic, Milan L.; Raring, James; Sysak, Matt N.; Johansson, Leif; DenBaars, Steven P.; Coldren, Larry A.
2003-07-01
The Sampled-Grating Distributed-Bragg-Reflector laser(SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network reconfigurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple bandgaps along the device structure. These epitaxial "platforms" provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated electro-absorption modulators.
Fiber Optic Control System Integration program: for optical flight control system development
NASA Astrophysics Data System (ADS)
Weaver, Thomas L.; Seal, Daniel W.
1994-10-01
Hardware and software were developed for optical feedback links in the flight control system of an F/A-18 aircraft. Developments included passive optical sensors and optoelectronics to operate the sensors. Sensors with different methods of operation were obtained from different manufacturers and integrated with common optoelectronics. The sensors were the following: Air Data Temperature; Air Data Pressure; and Leading Edge Flap, Nose Wheel Steering, Trailing Edge Flap, Pitch Stick, Rudder, Rudder Pedal, Stabilator, and Engine Power Lever Control Position. The sensors were built for a variety of aircraft locations and harsh environments. The sensors and optoelectronics were as similar as practical to a production system. The integrated system was installed by NASA for flight testing. Wavelength Division Multiplexing proved successful as a system design philosophy. Some sensors appeared to be better choices for aircraft applications than others, with digital sensors generally being better than analog sensors, and rotary sensors generally being better than linear sensors. The most successful sensor approaches were selected for use in a follow-on program in which the sensors will not just be flown on the aircraft and their performance recorded; but, the optical sensors will be used in closing flight control loops.
Two-dimensional optoelectronic interconnect-processor and its operational bit error rate
NASA Astrophysics Data System (ADS)
Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.
2004-10-01
Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.
All-optical negabinary adders using Mach-Zehnder interferometer
NASA Astrophysics Data System (ADS)
Cherri, A. K.
2011-02-01
In contrast to optoelectronics, all-optical adders are proposed where all-optical signals are used to represent the input numbers and the control signals. In addition, the all-optical adders use the negabinary modified signed-digit number representation (an extension of the negabinary number system) to represent the input digits. Further, the ultra-speed of the designed circuits is achieved due to the use of ultra-fast all-optical switching property of the semiconductor optical amplifier and Mach-Zehnder interferometer (SOA-MZI). Furthermore, two-bit per digit binary encoding scheme is employed to represent the trinary values of the negabinary modified signed-digits.
Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system
NASA Astrophysics Data System (ADS)
Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao
2017-06-01
Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.
NASA Technical Reports Server (NTRS)
Wang, Xinghua; Wang, Bin; Bos, Philip J.; Anderson, James E.; Kujawinska, Malgorzata; Pouch, John; Miranda, Feliz
2004-01-01
In a 3-D display system based on an opto-electronic reconstruction of a digitally recorded hologram, the field of view of such a system is limited by the spatial resolution of the liquid crystal on silicon (LCOS) spatial light modular (SLM) used to perform the opto-electronic reconstruction. In this article, the special resolution limitation of LCOS SLM associated with the fringe field effect and interpixel coupling is determined by the liquid crystal detector simulation and the Finite Difference Time Domain (FDTD) simulation. The diffraction efficiency loss associated with the imperfection in the phase profile is studied with an example of opto-electronic reconstruction of an amplitude object. A high spatial resolution LCOS SLM with a wide reconstruction angle is proposed.
Digital optical computers at the optoelectronic computing systems center
NASA Technical Reports Server (NTRS)
Jordan, Harry F.
1991-01-01
The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.
Limit characteristics of digital optoelectronic processor
NASA Astrophysics Data System (ADS)
Kolobrodov, V. G.; Tymchik, G. S.; Kolobrodov, M. S.
2018-01-01
In this article, the limiting characteristics of a digital optoelectronic processor are explored. The limits are defined by diffraction effects and a matrix structure of the devices for input and output of optical signals. The purpose of a present research is to optimize the parameters of the processor's components. The developed physical and mathematical model of DOEP allowed to establish the limit characteristics of the processor, restricted by diffraction effects and an array structure of the equipment for input and output of optical signals, as well as to optimize the parameters of the processor's components. The diameter of the entrance pupil of the Fourier lens is determined by the size of SLM and the pixel size of the modulator. To determine the spectral resolution, it is offered to use a concept of an optimum phase when the resolved diffraction maxima coincide with the pixel centers of the radiation detector.
NASA Astrophysics Data System (ADS)
Qian, Feng; Li, Guoqiang
2001-12-01
In this paper a generalized look-ahead logic algorithm for number conversion from signed-digit to its complement representation is developed. By properly encoding the signed digits, all the operations are performed by binary logic, and unified logical expressions can be obtained for conversion from modified-signed-digit (MSD) to 2's complement, trinary signed-digit (TSD) to 3's complement, and quaternary signed-digit (QSD) to 4's complement. For optical implementation, a parallel logical array module using electron-trapping device is employed, which is suitable for realizing complex logic functions in the form of sum-of-product. The proposed algorithm and architecture are compatible with a general-purpose optoelectronic computing system.
Integrated Digital Platform for the Valorization of a Cultural Landscape
NASA Astrophysics Data System (ADS)
Angheluţǎ, L. M.; Ratoiu, L.; Chelmus, A. I.; Rǎdvan, R.; Petculescu, A.
2017-05-01
This paper presents a newly started demonstrative project regarding the implementation and validation of an interdisciplinary research model for the Aluniş-Bozioru (Romania) cultural landscape, with the development of an online interactive digital product. This digital product would provide complementary data about the historical monuments and their environment, and also, constant updates and statistical comparison in order to generate an accurate evaluation of the state of conservation for this specific cultural landscape. Furthermore, the resulted information will contribute in the decision making process for the regional development policies. The project is developed by an interdisciplinary joint team of researchers consisted of technical scientists with great experience in advanced non-invasive characterization of the cultural heritage (NIRD for Optoelectronics - INOE 2000) and a group of experts from geology and biology (Romanian Academy's "Emil Racoviţǎ" Institute of Speleology - ISER). Resulted scientific data will include: 3D digital models of the selected historical monuments, microclimate monitoring, Ground Penetrating Radar survey, airborne LIDAR, multispectral and thermal imaging, soil and rock characterization, environmental studies. This digital product is constituted by an intuitive website with a database that allows data corroboration, visualization and comparison of the 3D digital models, as well as a digital mapping in the GIS system.
NASA Astrophysics Data System (ADS)
Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario
2015-10-01
Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.
An Implantable Neural Sensing Microsystem with Fiber-Optic Data Transmission and Power Delivery
Park, Sunmee; Borton, David A.; Kang, Mingyu; Nurmikko, Arto V.; Song, Yoon-Kyu
2013-01-01
We have developed a prototype cortical neural sensing microsystem for brain implantable neuroengineering applications. Its key feature is that both the transmission of broadband, multichannel neural data and power required for the embedded microelectronics are provided by optical fiber access. The fiber-optic system is aimed at enabling neural recording from rodents and primates by converting cortical signals to a digital stream of infrared light pulses. In the full microsystem whose performance is summarized in this paper, an analog-to-digital converter and a low power digital controller IC have been integrated with a low threshold, semiconductor laser to extract the digitized neural signals optically from the implantable unit. The microsystem also acquires electrical power and synchronization clocks via optical fibers from an external laser by using a highly efficient photovoltaic cell on board. The implantable unit employs a flexible polymer substrate to integrate analog and digital microelectronics and on-chip optoelectronic components, while adapting to the anatomical and physiological constraints of the environment. A low power analog CMOS chip, which includes preamplifier and multiplexing circuitry, is directly flip-chip bonded to the microelectrode array to form the cortical neurosensor device. PMID:23666130
NASA Astrophysics Data System (ADS)
Li, Guoqiang; Qian, Feng
2001-11-01
We present, for the first time to our knowledge, a generalized lookahead logic algorithm for number conversion from signed-digit to complement representation. By properly encoding the signed-digits, all the operations are performed by binary logic, and unified logical expressions can be obtained for conversion from modified-signed- digit (MSD) to 2's complement, trinary signed-digit (TSD) to 3's complement, and quarternary signed-digit (QSD) to 4's complement. For optical implementation, a parallel logical array module using an electron-trapping device is employed and experimental results are shown. This optical module is suitable for implementing complex logic functions in the form of the sum of the product. The algorithm and architecture are compatible with a general-purpose optoelectronic computing system.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Vacas-Jacques, Paulino; Wellman Center for Photomedicine and Harvard Medical School, Massachusetts General Hospital, Boston, Massachusetts 02114; Linnes, Jacqueline
Innovations in international health require the use of state-of-the-art technology to enable clinical chemistry for diagnostics of bodily fluids. We propose the implementation of a portable and affordable lock-in amplifier-based instrument that employs digital technology to perform biochemical diagnostics on blood, urine, and other fluids. The digital instrument is composed of light source and optoelectronic sensor, lock-in detection electronics, microcontroller unit, and user interface components working with either power supply or batteries. The instrument performs lock-in detection provided that three conditions are met. First, the optoelectronic signal of interest needs be encoded in the envelope of an amplitude-modulated waveform. Second,more » the reference signal required in the demodulation channel has to be frequency and phase locked with respect to the optoelectronic carrier signal. Third, the reference signal should be conditioned appropriately. We present three approaches to condition the signal appropriately: high-pass filtering the reference signal, precise offset tuning the reference level by low-pass filtering, and by using a voltage divider network. We assess the performance of the lock-in instrument by comparing it to a benchmark device and by determining protein concentration with single-color absorption measurements. We validate the concentration values obtained with the proposed instrument using chemical concentration measurements. Finally, we demonstrate that accurate retrieval of phase information can be achieved by using the same instrument.« less
Development and Performance Analysis of a Photonics-Assisted RF Converter for 5G Applications
NASA Astrophysics Data System (ADS)
Borges, Ramon Maia; Muniz, André Luiz Marques; Sodré Junior, Arismar Cerqueira
2017-03-01
This article presents a simple, ultra-wideband and tunable radiofrequency (RF) converter for 5G cellular networks. The proposed optoelectronic device performs broadband photonics-assisted upconversion and downconversion using a single optical modulator. Experimental results demonstrate RF conversion from DC to millimeter waves, including 28 and 38 GHz that are potential frequency bands for 5G applications. Narrow linewidth and low phase noise characteristics are observed in all generated RF carriers. An experimental digital performance analysis using different modulation schemes illustrates the applicability of the proposed photonics-based device in reconfigurable optical wireless communications.
NASA Astrophysics Data System (ADS)
Furlong, Cosme; Yokum, Jeffrey S.; Pryputniewicz, Ryszard J.
2002-06-01
Sensitivity, accuracy, and precision characteristics in quantitative optical metrology techniques, and specifically in optoelectronic holography based on fiber optics and high-spatial and high-digital resolution cameras, are discussed in this paper. It is shown that sensitivity, accuracy, and precision dependent on both, the effective determination of optical phase and the effective characterization of the illumination-observation conditions. Sensitivity, accuracy, and precision are investigated with the aid of National Institute of Standards and Technology (NIST) traceable gages, demonstrating the applicability of quantitative optical metrology techniques to satisfy constantly increasing needs for the study and development of emerging technologies.
Optoelectronic Reservoir Computing
Paquot, Y.; Duport, F.; Smerieri, A.; Dambre, J.; Schrauwen, B.; Haelterman, M.; Massar, S.
2012-01-01
Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an optoelectronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations. PMID:22371825
NASA Astrophysics Data System (ADS)
Gladkii, V. P.; Nikitin, V. A.; Prokhorov, V. P.; Yakovenko, N. A.
1995-10-01
The results are given of technologic and circuit-engineering development of planar micro-optics components made of glasses and of lithium niobate. These components are intended for devices to be used in logic—arithmetic processing of information.
Radiation Effects on Optoelectronic Devices in Space Missions
NASA Technical Reports Server (NTRS)
Johnston, Allan H.
2006-01-01
Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.
Development of an optoelectronic holographic platform for otolaryngology applications
NASA Astrophysics Data System (ADS)
Harrington, Ellery; Dobrev, Ivo; Bapat, Nikhil; Flores, Jorge Mauricio; Furlong, Cosme; Rosowski, John; Cheng, Jeffery Tao; Scarpino, Chris; Ravicz, Michael
2010-08-01
In this paper, we present advances on our development of an optoelectronic holographic computing platform with the ability to quantitatively measure full-field-of-view nanometer-scale movements of the tympanic membrane (TM). These measurements can facilitate otologists' ability to study and diagnose hearing disorders in humans. The holographic platform consists of a laser delivery system and an otoscope. The control software, called LaserView, is written in Visual C++ and handles communication and synchronization between hardware components. It provides a user-friendly interface to allow viewing of holographic images with several tools to automate holography-related tasks and facilitate hardware communication. The software uses a series of concurrent threads to acquire images, control the hardware, and display quantitative holographic data at video rates and in two modes of operation: optoelectronic holography and lensless digital holography. The holographic platform has been used to perform experiments on several live and post-mortem specimens, and is to be deployed in a medical research environment with future developments leading to its eventual clinical use.
Assembly of opto-electronic module with improved heat sink
Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real
2004-11-23
A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.
Trinary signed-digit arithmetic using an efficient encoding scheme
NASA Astrophysics Data System (ADS)
Salim, W. Y.; Alam, M. S.; Fyath, R. S.; Ali, S. A.
2000-09-01
The trinary signed-digit (TSD) number system is of interest for ultrafast optoelectronic computing systems since it permits parallel carry-free addition and borrow-free subtraction of two arbitrary length numbers in constant time. In this paper, a simple coding scheme is proposed to encode the decimal number directly into the TSD form. The coding scheme enables one to perform parallel one-step TSD arithmetic operation. The proposed coding scheme uses only a 5-combination coding table instead of the 625-combination table reported recently for recoded TSD arithmetic technique.
One-step trinary signed-digit arithmetic using an efficient encoding scheme
NASA Astrophysics Data System (ADS)
Salim, W. Y.; Fyath, R. S.; Ali, S. A.; Alam, Mohammad S.
2000-11-01
The trinary signed-digit (TSD) number system is of interest for ultra fast optoelectronic computing systems since it permits parallel carry-free addition and borrow-free subtraction of two arbitrary length numbers in constant time. In this paper, a simple coding scheme is proposed to encode the decimal number directly into the TSD form. The coding scheme enables one to perform parallel one-step TSD arithmetic operation. The proposed coding scheme uses only a 5-combination coding table instead of the 625-combination table reported recently for recoded TSD arithmetic technique.
Nonlinear research of an image motion stabilization system embedded in a space land-survey telescope
NASA Astrophysics Data System (ADS)
Somov, Yevgeny; Butyrin, Sergey; Siguerdidjane, Houria
2017-01-01
We consider an image motion stabilization system embedded into a space telescope for a scanning optoelectronic observation of terrestrial targets. Developed model of this system is presented taking into account physical hysteresis of piezo-ceramic driver and a time delay at a forming of digital control. We have presented elaborated algorithms for discrete filtering and digital control, obtained results on analysis of the image motion velocity oscillations in the telescope focal plane, and also methods for terrestrial and in-flight verification of the system.
NASA Astrophysics Data System (ADS)
Kim, Young Lae
For 20 years, single walled carbon nanotubes (SWNTs) have been studied actively due to their unique one-dimensional nanostructure and superior electrical, thermal, and mechanical properties. For these reasons, they offer the potential to serve as building blocks for future electronic devices such as field effect transistors (FETs), electromechanical devices, and various sensors. In order to realize these applications, it is crucial to develop a simple, scalable, and reliable nanomanufacturing process that controllably places aligned SWNTs in desired locations, orientations, and dimensions. Also electronic properties (semiconducting/metallic) of SWNTs and their organized networks must be controlled for the desired performance of devices and systems. These fundamental challenges are significantly limiting the use of SWNTs for future electronic device applications. Here, we demonstrate a strategy to fabricate highly controlled micro/nanoscale SWNT network structures and present the related assembly mechanism to engineer the SWNT network topology and its electrical transport properties. A method designed to evaluate the electrical reliability of such nano- and microscale SWNT networks is also presented. Moreover, we develop and investigate a robust SWNT based multifunctional selective chemical sensor and a range of multifunctional optoelectronic switches, photo-transistors, optoelectronic logic gates and complex optoelectronic digital circuits.
Investigations of DC power supplies with optoelectronic transducers and RF energy converters
NASA Astrophysics Data System (ADS)
Guzowski, B.; Gozdur, R.; Bernacki, L.; Lakomski, M.
2016-04-01
Fiber Distribution Cabinets (FDC) monitoring systems are increasingly popular. However it is difficult to realize such system in passive FDC, due to lack of source of power supply. In this paper investigation of four different DC power supplies with optoelectronic transducers is described. Two converters: photovoltaic power converter and PIN photodiode can convert the light transmitted through the optical fiber to electric energy. Solar cell and antenna RF-PCB are also tested. Results presented in this paper clearly demonstrate that it is possible to build monitoring system in passive FDC. During the tests maximum obtained output power was 11 mW. However all converters provided enough power to excite 32-bit microcontroller with ARM-cores and digital thermometer.
Device-packaging method and apparatus for optoelectronic circuits
Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.
2017-04-25
An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.
2005-07-13
UHLMANN University of Technology Ilmenau– PO Box 105565 – D-98684 Ilmenau - Germany RESUME : Les circuits numériques supraconducteurs micro-ondes...circuits RSFQ. Ce banc de mesure comporte deux types d’interfaces opto-RSFQ, basées sur des matériaux semiconducteurs et supraconducteurs , respectivement
Analysis on the dynamic error for optoelectronic scanning coordinate measurement network
NASA Astrophysics Data System (ADS)
Shi, Shendong; Yang, Linghui; Lin, Jiarui; Guo, Siyang; Ren, Yongjie
2018-01-01
Large-scale dynamic three-dimension coordinate measurement technique is eagerly demanded in equipment manufacturing. Noted for advantages of high accuracy, scale expandability and multitask parallel measurement, optoelectronic scanning measurement network has got close attention. It is widely used in large components jointing, spacecraft rendezvous and docking simulation, digital shipbuilding and automated guided vehicle navigation. At present, most research about optoelectronic scanning measurement network is focused on static measurement capacity and research about dynamic accuracy is insufficient. Limited by the measurement principle, the dynamic error is non-negligible and restricts the application. The workshop measurement and positioning system is a representative which can realize dynamic measurement function in theory. In this paper we conduct deep research on dynamic error resources and divide them two parts: phase error and synchronization error. Dynamic error model is constructed. Based on the theory above, simulation about dynamic error is carried out. Dynamic error is quantized and the rule of volatility and periodicity has been found. Dynamic error characteristics are shown in detail. The research result lays foundation for further accuracy improvement.
NASA Technical Reports Server (NTRS)
1991-01-01
Optoelectronic materials and devices are examined. Optoelectronic devices, which generate, detect, modulate, or switch electromagnetic radiation are being developed for a variety of space applications. The program includes spatial light modulators, solid state lasers, optoelectronic integrated circuits, nonlinear optical materials and devices, fiber optics, and optical networking photovoltaic technology and optical processing.
Phosphor Scanner For Imaging X-Ray Diffraction
NASA Technical Reports Server (NTRS)
Carter, Daniel C.; Hecht, Diana L.; Witherow, William K.
1992-01-01
Improved optoelectronic scanning apparatus generates digitized image of x-ray image recorded in phosphor. Scanning fiber-optic probe supplies laser light stimulating luminescence in areas of phosphor exposed to x rays. Luminescence passes through probe and fiber to integrating sphere and photomultiplier. Sensitivity and resolution exceed previously available scanners. Intended for use in x-ray crystallography, medical radiography, and molecular biology.
Sadot, Dan; Dorman, G; Gorshtein, Albert; Sonkin, Eduard; Vidal, Or
2015-01-26
112Gbit/sec DSP-based single channel transmission of PAM4 at 56Gbaud over 15GHz of effective analog bandwidth is experimentally demonstrated. The DSP enables use of mature 25G optoelectronics for 2-10km datacenter intra-connections, and 8Tbit/sec over 80km interconnections between data centers.
3-D movies using microprocessor-controlled optoelectronic spectacles
NASA Astrophysics Data System (ADS)
Jacobs, Ken; Karpf, Ron
2012-02-01
Despite rapid advances in technology, 3-D movies are impractical for general movie viewing. A new approach that opens all content for casual 3-D viewing is needed. 3Deeps--advanced microprocessor controlled optoelectronic spectacles--provides such a new approach to 3-D. 3Deeps works on a different principle than other methods for 3-D. 3-D movies typically use the asymmetry of dual images to produce stereopsis, necessitating costly dual-image content, complex formatting and transmission standards, and viewing via a corresponding selection device. In contrast, all 3Deeps requires to view movies in realistic depth is an illumination asymmetry--a controlled difference in optical density between the lenses. When a 2-D movie has been projected for viewing, 3Deeps converts every scene containing lateral motion into realistic 3-D. Put on 3Deeps spectacles for 3-D viewing, or remove them for viewing in 2-D. 3Deeps works for all analogue and digital 2-D content, by any mode of transmission, and for projection screens, digital or analogue monitors. An example using aerial photography is presented. A movie consisting of successive monoscopic aerial photographs appears in realistic 3-D when viewed through 3Deeps spectacles.
Advanced educational program in optoelectronics for undergraduates and graduates in electronics
NASA Astrophysics Data System (ADS)
Vladescu, Marian; Schiopu, Paul
2015-02-01
The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.
NASA Astrophysics Data System (ADS)
Powers, John P.; Pace, Phillip E.
2008-02-01
We have designed, built and tested an actively mode-locked fiber laser, operating at 1550 nm, for use as the sampling waveform in an opto-electronic analog-to-digital converter (ADC). Analysis shows that, in order to digitize a 10-GHz signal to 10 bits of resolution, the sampling pulsewidth must be less than 2.44 ps, the RMS timing jitter must be below 31.0 fs, and the RMS amplitude jitter must be below 0.195%. Fiber lasers have proven to have the capability to narrowly exceed these operating requirements. The fiber laser is a "sigma" laser consisting of Er-doped gain medium, dispersion-compensating fiber, nonlinear fiber, a Faraday rotation mirror, polarization-maintaining fiber and components, and diode pump lasers. The active mode-locking is achieved by a Mach-Zehnder interferometer modulator, driven by a frequency synthesizer operating at the desired sampling rate. A piezo-electric element is used in a feedback control loop to stabilize the output PRF against environmental changes. Measurements of the laser output revealed the maximum nominal PRF to be 16 GHz, the nominal pulsewidth to be 7.2 ps, and the nominal RNS timing jitter to be 386 fs. Incorporating this laser into a sampling ADC would allow us to sample a 805-MHz bandwidth signal to a resolution of 10 bits as limited by timing jitter. Techniques to reduce the timing-jitter bottleneck are discussed.
NASA Technical Reports Server (NTRS)
Kemeny, Sabrina E.
1994-01-01
Electronic and optoelectronic hardware implementations of highly parallel computing architectures address several ill-defined and/or computation-intensive problems not easily solved by conventional computing techniques. The concurrent processing architectures developed are derived from a variety of advanced computing paradigms including neural network models, fuzzy logic, and cellular automata. Hardware implementation technologies range from state-of-the-art digital/analog custom-VLSI to advanced optoelectronic devices such as computer-generated holograms and e-beam fabricated Dammann gratings. JPL's concurrent processing devices group has developed a broad technology base in hardware implementable parallel algorithms, low-power and high-speed VLSI designs and building block VLSI chips, leading to application-specific high-performance embeddable processors. Application areas include high throughput map-data classification using feedforward neural networks, terrain based tactical movement planner using cellular automata, resource optimization (weapon-target assignment) using a multidimensional feedback network with lateral inhibition, and classification of rocks using an inner-product scheme on thematic mapper data. In addition to addressing specific functional needs of DOD and NASA, the JPL-developed concurrent processing device technology is also being customized for a variety of commercial applications (in collaboration with industrial partners), and is being transferred to U.S. industries. This viewgraph p resentation focuses on two application-specific processors which solve the computation intensive tasks of resource allocation (weapon-target assignment) and terrain based tactical movement planning using two extremely different topologies. Resource allocation is implemented as an asynchronous analog competitive assignment architecture inspired by the Hopfield network. Hardware realization leads to a two to four order of magnitude speed-up over conventional techniques and enables multiple assignments, (many to many), not achievable with standard statistical approaches. Tactical movement planning (finding the best path from A to B) is accomplished with a digital two-dimensional concurrent processor array. By exploiting the natural parallel decomposition of the problem in silicon, a four order of magnitude speed-up over optimized software approaches has been demonstrated.
Optoelectronic Sensor System for Guidance in Docking
NASA Technical Reports Server (NTRS)
Howard, Richard T.; Bryan, Thomas C.; Book, Michael L.; Jackson, John L.
2004-01-01
The Video Guidance Sensor (VGS) system is an optoelectronic sensor that provides automated guidance between two vehicles. In the original intended application, the two vehicles would be spacecraft docking together, but the basic principles of design and operation of the sensor are applicable to aircraft, robots, vehicles, or other objects that may be required to be aligned for docking, assembly, resupply, or precise separation. The system includes a sensor head containing a monochrome charge-coupled- device video camera and pulsed laser diodes mounted on the tracking vehicle, and passive reflective targets on the tracked vehicle. The lasers illuminate the targets, and the resulting video images of the targets are digitized. Then, from the positions of the digitized target images and known geometric relationships among the targets, the relative position and orientation of the vehicles are computed. As described thus far, the VGS system is based on the same principles as those of the system described in "Improved Video Sensor System for Guidance in Docking" (MFS-31150), NASA Tech Briefs, Vol. 21, No. 4 (April 1997), page 9a. However, the two systems differ in the details of design and operation. The VGS system is designed to operate with the target completely visible within a relative-azimuth range of +/-10.5deg and a relative-elevation range of +/-8deg. The VGS acquires and tracks the target within that field of view at any distance from 1.0 to 110 m and at any relative roll, pitch, and/or yaw angle within +/-10deg. The VGS produces sets of distance and relative-orientation data at a repetition rate of 5 Hz. The software of this system also accommodates the simultaneous operation of two sensors for redundancy
NASA Technical Reports Server (NTRS)
Reed, Robert A.; Ladbury, Ray L.; Day, John H. (Technical Monitor)
2000-01-01
Radiation effects in photonic and microelectronic components can impact the performance of high-speed digital optical data link in a variety of ways. This segment of the short course focuses on radiation effects in digital optical data links operating in the MHz to GHz regime. (Some of the information is applicable to frequencies above and below this regime) The three basic component level effects that should be considered are Total Ionizing Dose (TID), Displacement Damage Dose (DDD) and Single Event Effects (SEE). In some cases the system performance degradation can be quantified from component level tests, while in others a more holistic characterization approach must be taken. In Section 2.0 of this segment of the Short Course we will give a brief overview of the space radiation environment follow by a summary of the basic space radiation effects important for microelectronics and photonics listed above. The last part of this section will give an example of a typical mission radiation environment requirements. Section 3.0 gives an overview of intra-satellite digital optical data link systems. It contains a discussion of the digital optical data link and it's components. Also, we discuss some of the important system performance metrics that are impacted by radiation effects degradation of optical and optoelectronic component performance. Section 4.0 discusses radiation effects in optical and optoelectronic components. While each component effect will be discussed, the focus of this section is on degradation of passive optical components and SEE in photodiodes (other mechanisms are covered in segment II of this short course entitled "Photonic Devices with Complex and Multiple Failure Modes"). Section 5.0 will focus on optical data link system response to the space radiation environment. System level SEE ground testing will be discussed. Then we give a discussion of system level assessment of data link performance when operating in the space radiation environment.
Synthesis, structure, and optoelectronic properties of II-IV-V 2 materials
Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; ...
2017-03-07
II-IV-V 2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V 2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V 2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progressmore » has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V 2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.« less
Topical Meeting of Broadband Analog and Digital Optoelectronics
1992-01-01
effects [2]. Laser nonlinearitics can be minimised by careful design of the device to maximise the relaxation oscillation resonance frequency [2...feedback loop ultimately limits the stability of the circuit and determines the maximum frequency of operation. With hybrid circuit constructioi. this...range and number of accessible frequency channels), the tuning lever, and the filter selectivity (which determines the side-mode suppression ratio (SMSR
Optical detectors for GaAs MMIC integration: Technology assessment
NASA Technical Reports Server (NTRS)
Claspy, P. C.; Bhasin, K. B.
1989-01-01
Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.
Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer
NASA Astrophysics Data System (ADS)
Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.
2011-12-01
The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.
Technology Roadmaps for Compound Semiconductors
Bennett, Herbert S.
2000-01-01
The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615
Anderson, Gene R.; Armendariz, Marcelino G.; Carson, Richard F.; Bryan, Robert P.; Duckett, III, Edwin B.; Kemme, Shanalyn Adair; McCormick, Frederick B.; Peterson, David W.
2006-04-04
An apparatus and method of attenuating and/or conditioning optical energy for an optical transmitter, receiver or transceiver module is disclosed. An apparatus for attenuating the optical output of an optoelectronic connector including: a mounting surface; an array of optoelectronic devices having at least a first end; an array of optical elements having at least a first end; the first end of the array of optical elements optically aligned with the first end of the array of optoelectronic devices; an optical path extending from the first end of the array of optoelectronic devices and ending at a second end of the array of optical elements; and an attenuator in the optical path for attenuating the optical energy emitted from the array of optoelectronic devices. Alternatively, a conditioner may be adapted in the optical path for conditioning the optical energy emitted from the array of optoelectronic devices.
Simulating optoelectronic systems for remote sensing with SENSOR
NASA Astrophysics Data System (ADS)
Boerner, Anko
2003-04-01
The consistent end-to-end simulation of airborne and spaceborne remote sensing systems is an important task and sometimes the only way for the adaptation and optimization of a sensor and its observation conditions, the choice and test of algorithms for data processing, error estimation and the evaluation of the capabilities of the whole sensor system. The presented software simulator SENSOR (Software ENvironment for the Simulation of Optical Remote sensing systems) includes a full model of the sensor hardware, the observed scene, and the atmosphere in between. It allows the simulation of a wide range of optoelectronic systems for remote sensing. The simulator consists of three parts. The first part describes the geometrical relations between scene, sun, and the remote sensing system using a ray tracing algorithm. The second part of the simulation environment considers the radiometry. It calculates the at-sensor radiance using a pre-calculated multidimensional lookup-table taking the atmospheric influence on the radiation into account. Part three consists of an optical and an electronic sensor model for the generation of digital images. Using SENSOR for an optimization requires the additional application of task-specific data processing algorithms. The principle of the end-to-end-simulation approach is explained, all relevant concepts of SENSOR are discussed, and examples of its use are given. The verification of SENSOR is demonstrated.
NASA Astrophysics Data System (ADS)
Flores-Moreno, J. M.; Furlong, Cosme; Cheng, Jeffrey T.; Rosowski, John J.; Merchant, S. N.
2011-08-01
Recently, we introduced a Digital Optoelectronic Holographic System (DOEHS) for measurement of acoustically induced deformations of the human tympanic membrane (TM) in order to study and diagnose pathologic conditions of the middle-ear. The DOEHS consists of laser-delivery illumination (IS), optical head (OH), image-processing computer (IP), and positioning arm (PS) subsystems. Holographic information is recorded by a CCD and numerically reconstructed by Fresnel approximation. Our holographic otoscope system is currently deployed in a clinic and is packaged in a custom design. Since digital holography is a high sensitivity measurement technique and the interfering light waves travel along different paths, it makes measurements acquired by DOEHS susceptible to external vibrations. In order to avoid this susceptibility, we are testing a shearography setup as OH. Shearography presents same advantages as holographic interferometry, but it is less susceptible to vibration and external noise, which is a characteristic needed for the use of our techniques in a clinical environment. In this paper we present work in progress in our development of a shearography technique based on a Mach-Zehnder configuration as OH and demonstrate its application by quantifying vibrations modes in thin membranes, including human TM. Results are compared with those obtained with DOEHS.
Control Software for Advanced Video Guidance Sensor
NASA Technical Reports Server (NTRS)
Howard, Richard T.; Book, Michael L.; Bryan, Thomas C.
2006-01-01
Embedded software has been developed specifically for controlling an Advanced Video Guidance Sensor (AVGS). A Video Guidance Sensor is an optoelectronic system that provides guidance for automated docking of two vehicles. Such a system includes pulsed laser diodes and a video camera, the output of which is digitized. From the positions of digitized target images and known geometric relationships, the relative position and orientation of the vehicles are computed. The present software consists of two subprograms running in two processors that are parts of the AVGS. The subprogram in the first processor receives commands from an external source, checks the commands for correctness, performs commanded non-image-data-processing control functions, and sends image data processing parts of commands to the second processor. The subprogram in the second processor processes image data as commanded. Upon power-up, the software performs basic tests of functionality, then effects a transition to a standby mode. When a command is received, the software goes into one of several operational modes (e.g. acquisition or tracking). The software then returns, to the external source, the data appropriate to the command.
2D Organic Materials for Optoelectronic Applications.
Yang, Fangxu; Cheng, Shanshan; Zhang, Xiaotao; Ren, Xiaochen; Li, Rongjin; Dong, Huanli; Hu, Wenping
2018-01-01
The remarkable merits of 2D materials with atomically thin structures and optoelectronic attributes have inspired great interest in integrating 2D materials into electronics and optoelectronics. Moreover, as an emerging field in the 2D-materials family, assembly of organic nanostructures into 2D forms offers the advantages of molecular diversity, intrinsic flexibility, ease of processing, light weight, and so on, providing an exciting prospect for optoelectronic applications. Herein, the applications of organic 2D materials for optoelectronic devices are a main focus. Material examples include 2D, organic, crystalline, small molecules, polymers, self-assembly monolayers, and covalent organic frameworks. The protocols for 2D-organic-crystal-fabrication and -patterning techniques are briefly discussed, then applications in optoelectronic devices are introduced in detail. Overall, an introduction to what is known and suggestions for the potential of many exciting developments are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G; Kaplan, David L; Omenetto, Fiorenzo G; Huang, Yonggang; Kang, Zhan; Rogers, John A
2010-11-01
Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.
Indium phosphide nanowires and their applications in optoelectronic devices.
Zafar, Fateen; Iqbal, Azhar
2016-03-01
Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.
Single event test methodology for integrated optoelectronics
NASA Technical Reports Server (NTRS)
Label, Kenneth A.; Cooley, James A.; Stassinopoulos, E. G.; Marshall, Paul; Crabtree, Christina
1993-01-01
A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.
NASA Astrophysics Data System (ADS)
Furlong, Cosme; Pryputniewicz, Ryszard J.
2002-06-01
Recent technological trends based on miniaturization of mechanical, electro-mechanical, and photonic devices to the microscopic scale, have led to the development of microelectromechanical systems (MEMS). Effective development of MEMS components requires the synergism of advanced design, analysis, and fabrication methodologies, and also of quantitative metrology techniques for characterizing their performance, reliability, and integrity during the electronic packaging cycle. In this paper, we describe opto-electronic techniques for measuring, with sub-micrometer accuracy, shape and changes in states of deformation of MEMS strictures. With the described opto-electronic techniques, it is possible to characterize MEMS components using the display and data modes. In the display mode, interferometric information related to shape and deformation is displayed at video frame rates, providing the capability for adjusting and setting experimental conditions. In the data mode, interferometric information related to shape and deformation is recorded as high-spatial and high-digital resolution images, which are further processed to provide quantitative 3D information. Furthermore, the quantitative 3D data are exported to computer-aided design (CAD) environments and utilized for analysis and optimization of MEMS devices. Capabilities of opto- electronic techniques are illustrated with representative applications demonstrating their applicability to provide indispensable quantitative information for the effective development and optimization of MEMS devices.
WDM hybrid microoptical transceiver with Bragg volume grating
NASA Astrophysics Data System (ADS)
Jeřábek, Vitezslav; Armas, Julio; Mareš, David; Prajzler, Václav
2012-02-01
The paper presents the design, simulation and construction results of the wavelength division multiplex bidirectional transceiver module (WDM transceiver) for the passive optical network (PON) of a fiber to the home (FTTH) topology network. WDM transceiver uses a microoptical hybrid integration technology with volume holographic Bragg grating triplex filter -VHGT and a collimation lenses imagine system for wavelength multiplexing/ demultiplexing. This transmission type VHGT filter has high diffraction angle, very low insertion loses and optical crosstalk, which guide to very good technical parameters of transceiver module. WDM transceiver has been constructed using system of a four micromodules in the new circle topology. The optical micromodule with VHGT filter and collimation and decollimation lenses, two optoelectronics microwave receiver micromodules for receiving download information (internet and digital TV signals) and optoelectronic transmitter micromodule for transmitting upload information. In the paper is presented the optical analysis of the optical imagine system by ray-transfer matrix. We compute and measure VHGT characteristics such as diffraction angle, diffraction efficiency and diffraction crosstalk of the optical system for 1310, 1490 and 1550 nm wavelength radiation. For the design of optoelectronic receiver micromodule was used the low signal electrical equivalent circuit for the dynamic performance signal analysis. In the paper is presented the planar form WDM transceiver with polymer optical waveguides and two stage interference demultiplexing optical filter as well.
WDM hybrid microoptical transceiver with Bragg volume grating
NASA Astrophysics Data System (ADS)
Jeřábek, Vitezslav; Armas, Julio; Mareš, David; Prajzler, Václav
2011-09-01
The paper presents the design, simulation and construction results of the wavelength division multiplex bidirectional transceiver module (WDM transceiver) for the passive optical network (PON) of a fiber to the home (FTTH) topology network. WDM transceiver uses a microoptical hybrid integration technology with volume holographic Bragg grating triplex filter -VHGT and a collimation lenses imagine system for wavelength multiplexing/ demultiplexing. This transmission type VHGT filter has high diffraction angle, very low insertion loses and optical crosstalk, which guide to very good technical parameters of transceiver module. WDM transceiver has been constructed using system of a four micromodules in the new circle topology. The optical micromodule with VHGT filter and collimation and decollimation lenses, two optoelectronics microwave receiver micromodules for receiving download information (internet and digital TV signals) and optoelectronic transmitter micromodule for transmitting upload information. In the paper is presented the optical analysis of the optical imagine system by ray-transfer matrix. We compute and measure VHGT characteristics such as diffraction angle, diffraction efficiency and diffraction crosstalk of the optical system for 1310, 1490 and 1550 nm wavelength radiation. For the design of optoelectronic receiver micromodule was used the low signal electrical equivalent circuit for the dynamic performance signal analysis. In the paper is presented the planar form WDM transceiver with polymer optical waveguides and two stage interference demultiplexing optical filter as well.
Stereoscopic construction and practice of optoelectronic technology textbook
NASA Astrophysics Data System (ADS)
Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling
2017-08-01
It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.
Study of optoelectronic switch for satellite-switched time-division multiple access
NASA Technical Reports Server (NTRS)
Su, Shing-Fong; Jou, Liz; Lenart, Joe
1987-01-01
The use of optoelectronic switching for satellite switched time division multiple access will improve the isolation and reduce the crosstalk of an IF switch matrix. The results are presented of a study on optoelectronic switching. Tasks include literature search, system requirements study, candidate switching architecture analysis, and switch model optimization. The results show that the power divided and crossbar switching architectures are good candidates for an IF switch matrix.
Curriculum optimization of College of Optical Science and Engineering
NASA Astrophysics Data System (ADS)
Wang, Xiaoping; Zheng, Zhenrong; Wang, Kaiwei; Zheng, Xiaodong; Ye, Song; Zhu, Yuhui
2017-08-01
The optimized curriculum of College of Optical Science and Engineering is accomplished at Zhejiang University, based on new trends from both research and industry. The curriculum includes general courses, foundation courses such as mathematics and physics, major core courses, laboratory courses and several module courses. Module courses include optical system designing, optical telecommunication, imaging and vision, electronics and computer science, optoelectronic sensing and metrology, optical mechanics and materials, basics and extension. These curricula reflect the direction of latest researches and relates closely with optoelectronics. Therefore, students may combine flexibly compulsory courses with elective courses, and establish the personalized curriculum of "optoelectronics + X", according to their individual strengths and preferences.
NASA Astrophysics Data System (ADS)
Parekh, Devang
With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance frequency enhancement was exploited for millimeter-wave radio over fiber communications. Experimental demonstration of 4 Gb/s data transmission over 20 km of fiber and 3 m of wireless transmission at a 60 GHz carrier frequency was achieved. Additionally, optical injection of multi-transverse mode (MM) VCSELs was investigated showing record resonance frequency enhancement of > 54 GHz and 3-dB bandwidth of 38 GHz. Besides these applications, a number of other intriguing applications are also discussed, including an optoelectronic oscillator (OEO) and wavelength-division multiplexed passive optical networks (WDM-PON). Finally, the future of optical injection locking and its direction going forward will be discussed.
Optoelectronic devices utilizing materials having enhanced electronic transitions
Black, Marcie R [Newton, MA
2011-02-22
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.
Optoelectronic devices utilizing materials having enhanced electronic transitions
Black, Marcie R.
2013-04-09
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.
Optoelectronic device with nanoparticle embedded hole injection/transport layer
Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA
2012-01-03
An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.
One-dimensional CdS nanostructures: a promising candidate for optoelectronics.
Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou
2013-06-11
As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Inkjet-printed optoelectronics.
Zhan, Zhaoyao; An, Jianing; Wei, Yuefan; Tran, Van Thai; Du, Hejun
2017-01-19
Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy, which is not only of great significance for graphic applications but also has enormous potential for the direct printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the droplet-generation process in the nozzles of printheads and the physical properties affecting droplet formation and the profiles of the printed patterns. The second section outlines the recent activities related to applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photodetectors and transparent electrodes. In each application field, the challenges with the inkjet printing process and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the progress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.
Wrist display concept demonstration based on 2-in. color AMOLED
NASA Astrophysics Data System (ADS)
Meyer, Frederick M.; Longo, Sam J.; Hopper, Darrel G.
2004-09-01
The wrist watch needs an upgrade. Recent advances in optoelectronics, microelectronics, and communication theory have established a technology base that now make the multimedia Dick Tracy watch attainable during the next decade. As a first step towards stuffing the functionality of an entire personnel computer (PC) and television receiver under a watch face, we have set a goal of providing wrist video capability to warfighters. Commercial sector work on the wrist form factor already includes all the functionality of a personal digital assistant (PDA) and full PC operating system. Our strategy is to leverage these commercial developments. In this paper we describe our use of a 2.2 in. diagonal color active matrix light emitting diode (AMOLED) device as a wrist-mounted display (WMD) to present either full motion video or computer generated graphical image formats.
Swept source optical coherence tomography using an all-fiber 1300-nm ring laser source.
Choma, Michael A; Hsu, Kevin; Izatt, Joseph A
2005-01-01
The increased sensitivity of spectral domain optical coherence tomography (OCT) has driven the development of a new generation of technologies in OCT, including rapidly tunable, broad bandwidth swept laser sources and spectral domain OCT interferometer topologies. In this work, the operation of a turnkey 1300-nm swept laser source is demonstrated. This source has a fiber ring cavity with a semiconductor optical amplifier gain medium. Intracavity mode selection is achieved with an in-fiber tunable fiber Fabry-Perot filter. A novel optoelectronic technique that allows for even sampling of the swept source OCT signal in k space also is described. A differential swept source OCT system is presented, and images of in vivo human cornea and skin are presented. Lastly, the effects of analog-to-digital converter aliasing on image quality in swept source OCT are discussed.
Optoelectronic semiconductor device and method of fabrication
Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu
2014-11-25
An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.
1993-03-01
1991; Katulka et al. 1991; Zielinski and Renaud 1992; Powell and Zielinski 1992; Hummer et al. 1992). The electrical plasma is formed on the inside...charge amplifiers, and UPS control systems. 11" CD C)C GD A CJU t In~ 12 6. REFERENCES Bunte, S. W., R. A. Beyer, and A. E. Zielinski . "Temperature...State Devices). Cleveland, OH: Addison-Wesley Publishing Company, Inc. 1988. Katulka, 0. L., H. Burden, A. Zielinski , and K. White. "Electrical Energy
Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; ...
2017-05-16
Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less
Electronic and optoelectronic device applications based on ReS2
NASA Astrophysics Data System (ADS)
Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng
Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.
Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the bandmore » edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. As a result, we expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.« less
Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.
2017-01-01
Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications. PMID:28508866
Indium phosphide nanowires and their applications in optoelectronic devices
Zafar, Fateen
2016-01-01
Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920
NASA Astrophysics Data System (ADS)
Kroupa, Daniel M.; Vörös, Márton; Brawand, Nicholas P.; McNichols, Brett W.; Miller, Elisa M.; Gu, Jing; Nozik, Arthur J.; Sellinger, Alan; Galli, Giulia; Beard, Matthew C.
2017-05-01
Band edge positions of semiconductors determine their functionality in many optoelectronic applications such as photovoltaics, photoelectrochemical cells and light emitting diodes. Here we show that band edge positions of lead sulfide (PbS) colloidal semiconductor nanocrystals, specifically quantum dots (QDs), can be tuned over 2.0 eV through surface chemistry modification. We achieved this remarkable control through the development of simple, robust and scalable solution-phase ligand exchange methods, which completely replace native ligands with functionalized cinnamate ligands, allowing for well-defined, highly tunable chemical systems. By combining experiments and ab initio simulations, we establish clear relationships between QD surface chemistry and the band edge positions of ligand/QD hybrid systems. We find that in addition to ligand dipole, inter-QD ligand shell inter-digitization contributes to the band edge shifts. We expect that our established relationships and principles can help guide future optimization of functional organic/inorganic hybrid nanostructures for diverse optoelectronic applications.
Guo, Linjuan; Yang, Zheng; Dou, Xincun
2017-02-01
A rapid, ultrasensitive artificial olfactory system based on an individual optoelectronic Schottky junction is demonstrated for the discriminative detection of explosive vapors, including military explosives and improvised explosives. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Coupled Optoelectronic Oscillators:. Application to Low-Jitter Pulse Generation
NASA Astrophysics Data System (ADS)
Yu, N.; Tu, M.; Maleki, L.
2002-04-01
Actively mode-locked Erbium-doped fiber lasers (EDFL) have been studied for generating stable ultra-fast pulses (< 2 ps) at high repetition rates (> 5 GHz) [1,2]. These devices can be compact and environmentally stable, quite suitable for fiber-based high-data-rate communications and optical ultra-fast analog-to-digital conversions (ADC) [3]. The pulse-to-pulse jitter of an EDFL-based pulse generator will be ultimately limited by the phase noise of the mode-locking microwave source (typically electronic frequency synthesizers). On the other hand, opto-electronic oscillators (OEO) using fibers have been demonstrated to generate ultra-low phase noise microwaves at 10 GHz and higher [4]. The overall phase noise of an OEO can be much lower than commercially available synthesizers at the offset-frequency range above 100 Hz. Clearly, ultra-low jitter pulses can be generated by taking advantage of the low phase noise of OEOs. In this paper, we report the progress in developing a new low-jitter pulse generator by combing the two technologies. In our approach, the optical oscillator (mode-locked EDFL) and the microwave oscillator (OEO) are coupled through a common Mach-Zehnder (MZ) modulator, thus named coupled opto-electronic oscillator (COEO) [5]. Based on the results of previous OEO study, we can expect a 10 GHz pulse train with jitters less than 10 fs.
Design of neurophysiologically motivated structures of time-pulse coded neurons
NASA Astrophysics Data System (ADS)
Krasilenko, Vladimir G.; Nikolsky, Alexander I.; Lazarev, Alexander A.; Lobodzinska, Raisa F.
2009-04-01
The common methodology of biologically motivated concept of building of processing sensors systems with parallel input and picture operands processing and time-pulse coding are described in paper. Advantages of such coding for creation of parallel programmed 2D-array structures for the next generation digital computers which require untraditional numerical systems for processing of analog, digital, hybrid and neuro-fuzzy operands are shown. The optoelectronic time-pulse coded intelligent neural elements (OETPCINE) simulation results and implementation results of a wide set of neuro-fuzzy logic operations are considered. The simulation results confirm engineering advantages, intellectuality, circuit flexibility of OETPCINE for creation of advanced 2D-structures. The developed equivalentor-nonequivalentor neural element has power consumption of 10mW and processing time about 10...100us.
76 FR 10395 - BreconRidge Manufacturing Solutions, Now Known as Sanmina-SCI Corporation, Division...
Federal Register 2010, 2011, 2012, 2013, 2014
2011-02-24
... Solutions, Now Known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic Design and Manufacturing, a Subsidiary of Sanmina-SCI Corporation, Including On- Site Leased Workers From Kelly Services... Manufacturing Solutions, now known as Sanmina-SCI Corporation, Division Optoelectronic and Microelectronic...
High bandgap III-V alloys for high efficiency optoelectronics
Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark
2017-01-10
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
The construction of bilingual teaching of optoelectronic technology
NASA Astrophysics Data System (ADS)
Zhang, Yang; Zhao, Enming; Yang, Fan; Li, Qingbo; Zhu, Zheng; Li, Cheng; Sun, Peng
2017-08-01
This paper combines the characteristics of optoelectronic technology with that of bilingual teaching. The course pays attention to integrating theory with practice, and cultivating learners' ability. Reform and exploration have been done in the fields of teaching materials, teaching content, teaching methods, etc. The concrete content mainly includes five parts: selecting teaching materials, establishing teaching syllabus, choosing suitable teaching method, making multimedia courseware and improving the test system, which can arouse students' interest in their study and their autonomous learning ability to provide beneficial references for improving the quality of talents of optoelectronic bilingual courses.
Towards pattern generation and chaotic series prediction with photonic reservoir computers
NASA Astrophysics Data System (ADS)
Antonik, Piotr; Hermans, Michiel; Duport, François; Haelterman, Marc; Massar, Serge
2016-03-01
Reservoir Computing is a bio-inspired computing paradigm for processing time dependent signals that is particularly well suited for analog implementations. Our team has demonstrated several photonic reservoir computers with performance comparable to digital algorithms on a series of benchmark tasks such as channel equalisation and speech recognition. Recently, we showed that our opto-electronic reservoir computer could be trained online with a simple gradient descent algorithm programmed on an FPGA chip. This setup makes it in principle possible to feed the output signal back into the reservoir, and thus highly enrich the dynamics of the system. This will allow to tackle complex prediction tasks in hardware, such as pattern generation and chaotic and financial series prediction, which have so far only been studied in digital implementations. Here we report simulation results of our opto-electronic setup with an FPGA chip and output feedback applied to pattern generation and Mackey-Glass chaotic series prediction. The simulations take into account the major aspects of our experimental setup. We find that pattern generation can be easily implemented on the current setup with very good results. The Mackey-Glass series prediction task is more complex and requires a large reservoir and more elaborate training algorithm. With these adjustments promising result are obtained, and we now know what improvements are needed to match previously reported numerical results. These simulation results will serve as basis of comparison for experiments we will carry out in the coming months.
AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.
Sun, Wei; Tan, Chee-Keong; Tansu, Nelson
2017-09-19
The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications.
Perovskite Materials: Solar Cell and Optoelectronic Applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yang, Bin; Geohegan, David B; Xiao, Kai
2017-01-01
Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure,more » and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.« less
Optical fabrication and testing; Proceedings of the Meeting, Singapore, Oct. 22-27, 1990
NASA Astrophysics Data System (ADS)
Lorenzen, Manfred; Campbell, Duncan R.; Johnson, Craig W.
1991-03-01
Various papers on optical fabrication and testing are presented. Individual topics addressed include: interferometry with laser diodes, new methods for economic production of prisms and lenses, interferometer accuracy and precision, optical testing with wavelength scanning interferometer, digital Talbot interferometer, high-sensitivity interferometric technique for strain measurements, absolute interferometric testing of spherical surfaces, contouring using gratings created on an LCD panel, three-dimensional inspection using laser-based dynamic fringe projection, noncontact optical microtopography, laser scan microscope and infrared laser scan microscope, photon scanning tunneling microscopy. Also discussed are: combination-matching problems in the layout design of minilaser rangefinder, design and testing of a cube-corner array for laser ranging, mode and far-field pattern of diode laser-phased arrays, new glasses for optics and optoelectronics, optical properties of Li-doped ZnO films, application and machining of Zerodur for optical purposes, finish machining of optical components in mass production.
High-Speed Laser Scanner Maps a Surface in Three Dimensions
NASA Technical Reports Server (NTRS)
Lavelle, Joseph; Schuet, Stefan
2006-01-01
A scanning optoelectronic instrument generates the digital equivalent of a threedimensional (X,Y,Z) map of a surface that spans an area with resolution on the order of 0.005 in. ( 0.125mm). Originally intended for characterizing surface flaws (e.g., pits) on space-shuttle thermal-insulation tiles, the instrument could just as well be used for similar purposes in other settings in which there are requirements to inspect the surfaces of many objects. While many commercial instruments can perform this surface-inspection function, the present instrument offers a unique combination of capabilities not available in commercial instruments. This instrument utilizes a laser triangulation method that has been described previously in NASA Tech Briefs in connection with simpler related instruments used for different purposes. The instrument includes a sensor head comprising a monochrome electronic camera and two lasers. The camera is a high-resolution
Nagasawa, Shinji; Al-Naamani, Eman; Saeki, Akinori
2018-05-17
Owing to the diverse chemical structures, organic photovoltaic (OPV) applications with a bulk heterojunction framework have greatly evolved over the last two decades, which has produced numerous organic semiconductors exhibiting improved power conversion efficiencies (PCEs). Despite the recent fast progress in materials informatics and data science, data-driven molecular design of OPV materials remains challenging. We report a screening of conjugated molecules for polymer-fullerene OPV applications by supervised learning methods (artificial neural network (ANN) and random forest (RF)). Approximately 1000 experimental parameters including PCE, molecular weight, and electronic properties are manually collected from the literature and subjected to machine learning with digitized chemical structures. Contrary to the low correlation coefficient in ANN, RF yields an acceptable accuracy, which is twice that of random classification. We demonstrate the application of RF screening for the design, synthesis, and characterization of a conjugated polymer, which facilitates a rapid development of optoelectronic materials.
Optical fabrication and testing; Proceedings of the Meeting, Singapore, Oct. 22-27, 1990
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lorenzen, M.; Campbell, D.R.; Johnson, C.W.
1991-01-01
Various papers on optical fabrication and testing are presented. Individual topics addressed include: interferometry with laser diodes, new methods for economic production of prisms and lenses, interferometer accuracy and precision, optical testing with wavelength scanning interferometer, digital Talbot interferometer, high-sensitivity interferometric technique for strain measurements, absolute interferometric testing of spherical surfaces, contouring using gratings created on an LCD panel, three-dimensional inspection using laser-based dynamic fringe projection, noncontact optical microtopography, laser scan microscope and infrared laser scan microscope, photon scanning tunneling microscopy. Also discussed are: combination-matching problems in the layout design of minilaser rangefinder, design and testing of a cube-corner arraymore » for laser ranging, mode and far-field pattern of diode laser-phased arrays, new glasses for optics and optoelectronics, optical properties of Li-doped ZnO films, application and machining of Zerodur for optical purposes, finish machining of optical components in mass production.« less
Investigation of sparsity metrics for autofocusing in digital holographic microscopy
NASA Astrophysics Data System (ADS)
Fan, Xin; Healy, John J.; Hennelly, Bryan M.
2017-05-01
Digital holographic microscopy (DHM) is an optoelectronic technique that is made up of two parts: (i) the recording of the interference pattern of the diffraction pattern of an object and a known reference wavefield using a digital camera and (ii) the numerical reconstruction of the complex object wavefield using the recorded interferogram and a distance parameter as input. The latter is based on the simulation of optical propagation from the camera plane to a plane at any arbitrary distance from the camera. A key advantage of DHM over conventional microscopy is that both the phase and intensity information of the object can be recovered at any distance, using only one capture, and this facilitates the recording of scenes that may change dynamically and that may otherwise go in and out of focus. Autofocusing using traditional microscopy requires mechanical movement of the translation stage or the microscope objective, and multiple image captures that are then compared using some metric. Autofocusing in DHM is similar, except that the sequence of intensity images, to which the metric is applied, is generated numerically from a single capture. We recently investigated the application of a number of sparsity metrics for DHM autofocusing and in this paper we extend this work to include more such metrics, and apply them over a greater range of biological diatom cells and magnification/numerical apertures. We demonstrate for the first time that these metrics may be grouped together according to matching behavior following high pass filtering.
Towards fully analog hardware reservoir computing for speech recognition
NASA Astrophysics Data System (ADS)
Smerieri, Anteo; Duport, François; Paquot, Yvan; Haelterman, Marc; Schrauwen, Benjamin; Massar, Serge
2012-09-01
Reservoir computing is a very recent, neural network inspired unconventional computation technique, where a recurrent nonlinear system is used in conjunction with a linear readout to perform complex calculations, leveraging its inherent internal dynamics. In this paper we show the operation of an optoelectronic reservoir computer in which both the nonlinear recurrent part and the readout layer are implemented in hardware for a speech recognition application. The performance obtained is close to the one of to state-of-the-art digital reservoirs, while the analog architecture opens the way to ultrafast computation.
Huang, Fei; Wu, Hongbin; Cao, Yong
2010-07-01
Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).
Optoelectronic devices product assurance guideline for space application
NASA Astrophysics Data System (ADS)
Bensoussan, A.; Vanzi, M.
2017-11-01
New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.
Direct write of microlens array using digital projection photopolymerization
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lu Yi; Chen Shaochen
Microlens array is a key element in the field of information processing, optoelectronics, and integrated optics. Many existing fabrication processes remain expensive and complicated even though relatively low-cost replication processes have been developed. Here, we demonstrate the fabrication of microlens arrays through projection photopolymerization using a digital micromirror device (DMD) as a dynamic photomask. The DMD projects grayscale images, which are designed in a computer, onto a photocurable resin. The resin is then solidified with its thickness determined by a grayscale ultraviolet light and exposure time. Therefore, various geometries can be formed in a single-step, massively parallel fashion. We presentmore » microlens arrays made of acrylate-based polymer precursor. The physical and optical characteristics of the resulting lenses suggest that this fabrication technique is potentially suitable for applications in integrated optics.« less
Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells.
Nagaosa, Naoto; Morimoto, Takahiro
2017-07-01
The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Tech Briefs, September 2004
NASA Technical Reports Server (NTRS)
2004-01-01
Topics covered include: Brazing SiC/SiC Composites to Metals; Composite-Material Tanks with Chemically Resistant Liners; Thermally Conductive Metal-Tube/Carbon-Composite Joints; Improved BN Coatings on SiC Fibers in SiC Matrices; Iterative Demodulation and Decoding of Non-Square QAM; Measuring Radiation Patterns of Reconfigurable Patch Antennas on Wafers; Low-Cutoff, High-Pass Digital Filtering of Neural Signals; Further Improvement in 3DGRAPE; Ground Support Software for Spaceborne Instrumentation; MER SPICE Interface; Simulating Operation of a Planetary Rover; Analyzing Contents of a Computer Cache; Discrepancy Reporting Management System; Silicone-Rubber Microvalves Actuated by Paraffin; Hydraulic Apparatus for Mechanical Testing of Nuts; Heat Control via Torque Control in Friction Stir Welding; Manufacturing High-Quality Carbon Nanotubes at Lower Cost; Setup for Visual Observation of Carbon-Nanotube Arc Process; Solution Preserves Nucleic Acids in Body-Fluid Specimens; Oligodeoxynucleotide Probes for Detecting Intact Cells; Microwave-Spectral Signatures Would Reveal Concealed Objects; Digital Averaging Phasemeter for Heterodyne Interferometry; Optoelectronic Instrument Monitors pH in a Culture Medium; Imaging of gamma-Irradiated Regions of a Crystal; Photodiode-Based, Passive Ultraviolet Dosimeters; Discrete Wavelength-Locked External Cavity Laser; Flexible Shields for Protecting Spacecraft Against Debris; Part 2 of a Computational Study of a Drop-Laden Mixing Layer; Controllable Curved Mirrors Made from Single-Layer EAP Films; and Demonstration of a Pyrotechnic Bolt-Retractor System.
NASA Astrophysics Data System (ADS)
Chan, Hau P.; Bao, Nai-Keng; Kwok, Wing O.; Wong, Wing H.
2002-04-01
The application of Digital Pixel Hologram (DPH) as anti-counterfeiting technology for products such as commercial goods, credit cards, identity cards, paper money banknote etc. is growing important nowadays. It offers many advantages over other anti-counterfeiting tools and this includes high diffraction effect, high resolving power, resistance to photo copying using two-dimensional Xeroxes, potential for mass production of patterns at a very low cost. Recently, we have successfully in fabricating high definition DPH with resolution higher than 2500dpi for the purpose of anti-counterfeiting by applying modern optical diffraction theory to computer pattern generation technique with the assist of electron beam lithography (EBL). In this paper, we introduce five levels of encryption techniques, which can be embedded in the design of such DPHs to further improve its anti-counterfeiting performance with negligible added on cost. The techniques involved, in the ascending order of decryption complexity, are namely Gray-level Encryption, Pattern Encryption, Character Encryption, Image Modification Encryption and Codebook Encryption. A Hong Kong Special Administration Regions (HKSAR) DPH emblem was fabricated at a resolution of 2540dpi using the facilities housed in our Optoelectronics Research Center. This emblem will be used as an illustration to discuss in details about each encryption idea during the conference.
Absolute Position Encoders With Vertical Image Binning
NASA Technical Reports Server (NTRS)
Leviton, Douglas B.
2005-01-01
Improved optoelectronic patternrecognition encoders that measure rotary and linear 1-dimensional positions at conversion rates (numbers of readings per unit time) exceeding 20 kHz have been invented. Heretofore, optoelectronic pattern-recognition absoluteposition encoders have been limited to conversion rates <15 Hz -- too low for emerging industrial applications in which conversion rates ranging from 1 kHz to as much as 100 kHz are required. The high conversion rates of the improved encoders are made possible, in part, by use of vertically compressible or binnable (as described below) scale patterns in combination with modified readout sequences of the image sensors [charge-coupled devices (CCDs)] used to read the scale patterns. The modified readout sequences and the processing of the images thus read out are amenable to implementation by use of modern, high-speed, ultra-compact microprocessors and digital signal processors or field-programmable gate arrays. This combination of improvements makes it possible to greatly increase conversion rates through substantial reductions in all three components of conversion time: exposure time, image-readout time, and image-processing time.
Optoelectronic advancements in analog avionics networking systems
NASA Astrophysics Data System (ADS)
Wilgus, Joseph S.
1996-12-01
Over the past two decades, the types of networks used in both commercial and military systems to route information throughout a designated platform have essentially remained unchanged. Traditionally, digital networks have been used to route low data rate, low-bandwidth signals usually not exceeding 2 Ghz, amongst a variety of sensors, digital and signal processors and video displays. On the other hand, analog networks have been responsible for routing broad- banded radio-frequency signals, those ranging from 2 Ghz to well beyond 100 Ghz, between a specific antenna aperture and its designated receiver type. Current analog systems use one of either two approaches to transfer this signal information. The first approach uses microwave waveguides. This design is very efficient, albeit bulky, and has typically been used in ground-based systems. HOwever, it does not lend itself very well to airborne platforms where size and weight constraint are of primary concern. The second approach uses coaxial cable, which tends to exhibit excessive loss at higher frequencies and is much heavier than optical fiber. Like its counterpart the microwave waveguide, it too is not ideally suited for airborne platforms. However, up to now it has been the technology of choice for this particular application. This has led to other alternatives to be sought. With recent advancements being made in optoelectronics, optical fiber is becoming a viable alternative to the above mentioned approaches. It is the intent of this paper to identify airborne applications for photonic technology in analog networks and discuss the needed building blocks to implement this particular type of system.
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.
Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho
2016-10-27
Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures
Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho
2016-01-01
Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321
NASA Astrophysics Data System (ADS)
Ye, Chaohui; Wang, Zhong Lin; Zhou, Bingkun
2011-02-01
The 3rd International Photonics and OptoElectronics Meeting (POEM 2010) was held from November 2-5, 2011, in Wuhan, China. POEM takes place annually, usually in November, with the aim of focusing on the key techniques of scientific frontiers and industry in the field of optoelectronics, understanding future trends as well as making the most of the industrial advantages of Wuhan - Optics Valley of China (OVC). POEM 2010 presented a plenary session and six parallel sessions. The latter comprised Laser Technology and Applications; Nano-enabled Energy Technologies and Materials; Optoelectronic Devices and Integration; Optoelectronic Sensing and Imaging; Solar Cells, Solid State Lighting and Information Display Technologies; and Tera-Hertz Science and Technology. 700 delegates from the field of optoelectronics - including world-famous experts, researchers, investors and entrepreneurs from more than 20 countries - attended the conference, among whom were 160 invited speakers. POEM 2010 once again received extensive praise for its intricate planning, rich contents, and the high-level and influential invited speakers which it attracted. Participants remarked that the presentations by the invited experts, the 'hot topic' discussions, students' posters, and the awards for papers were very engaging. They appreciated this valuable and beneficial opportunity for exchanging ideas with top photonics and optoelectronics experts. Our thanks are extended to the Conference Secretariat and Local Organizing Committee, who have been completely dedicated to their work, and who made the conference such a great success. We are also grateful for the financial support from 111 Project (B07038), and for the help with organization and coordination from Wuhan National Laboratory for Optoelectronics and Huazhong University of Science and Technology. Proceedings of POEM 2010234 papers were selected out of the 343 manuscripts submitted. The organizers of POEM 2010 are grateful to all the authors whose papers are being published in this volume of the Journal of Physics: Conference Series. The proceedings are divided into six sections according to different technical areas: Laser Technology and Applications (LTA) Nano-enabled Energy Technologies and Materials (NETM) Optoelectronic Devices and Integration (OEDI) Optoelectronic Sensing and Imaging (OSI) Solar Cells, Solid State Lighting and Information Display Technologies (SSID) Tera-Hertz Science and Technology (THST) Wuhan, PR ChinaDecember, 2010 Chaohui YeZhong Lin WangBingkun ZhouConference Chairs The 3rd International Photonics and OptoElectronics Meeting (POEM 2010)November 2-5, 2010Wuhan, China Supporters:Ministry of Education of China (MOE)State Administration of Foreign Experts Affairs (SAFEA)National Natural Science Foundation of China (NSFC) Sponsors:Huazhong University of Science and Technology (HUST)China Hubei Provincial Science Technology Department (HBSTD)Wuhan East Lake National Innovation Model Park Co-operating Societies:Institute of Physics (IOP)American Institute of Physics (AIP)International Biomedical Optics Society (IBOS)Laser Institute of America (LIA)Optical Society of America (OSA)IEEE Photonics Society (Singapore and Hongkong Chapters)Chinese Optical Society (COS) Organizer:Wuhan National Laboratory for Optoelectronics (WNLO) 1. LASER TECHNOLOGY AND APPLICATIONS (LTA)Editors:Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Katsumi Midorikawa, Extreme Photonics Research Group, RIKEN (Japan)Bernd Wilhelmi, Jenoptik AG, Jena (Germany) 2. NANO-ENABLED ENERGY TECHNOLOGIES AND MATERIALS (NETM)Editors:Zhong Lin Wang, Wuhan National Laboratory for Optoelectronics (China) and Georgia Institute of Technology (USA)Guozhen Shen, Wuhan National Laboratory for Optoelectronics (China) 3. OPTOELECTRONIC DEVICES AND INTEGRATION (OEDI)Editors:Chinlon Lin, Bell Laboratory (USA)Jesper Moerk, Technical University of Denmark (Denmark)Xun Li, McMaster University (Canada)Xinliang Zhang, Wuhan National Laboratory for Optoelectronics (China)Junqiang Sun, Wuhan National Laboratory for Optoelectronics (China) 4. OPTOELECTRONIC SENSING AND IMAGING (OSI)Editors:Kecheng Yang, Wuhan National Laboratory for Optoelectronics (China)Pengcheng Li, Wuhan National Laboratory for Optoelectronics (China) 5. SOLAR CELLS, SOLID-STATE LIGHTING AND INFORMATION DISPLAY TECHNOLOGIES (SSID)Editors:Hiroshi Amano, Meijo University (Japan)Yibing Cheng, Monash University (Australia)Jinzhong Yu, Institute of Semiconductor, CAS (China)Changqing Chen, Wuhan National Laboratory for Optoelectronics (China)Hongwei Han, Wuhan National Laboratory for Optoelectronics (China)Guoli Tu, Wuhan National Laboratory for Optoelectronics (China) 6. TERA-HERTZ SCIENCE AND TECHNOLOGY (THST)Editors:Jianquan Yao, Tianjin University (China)Shenggang Liu, University of Electronic Science and Technology of China (China)X C Zhang, Rensselaer Polytechnic Institute (USA)Jinsong Liu, Wuhan National Laboratory for Optoelectronics (China) International Advisory Committee:Yibing Cheng, Monash University (Australia)Stephen Z D Cheng, University of Akron (USA)Min Gu, Swinburne University of Technology (Australia)Andrew B Holmes, the University of Melbourne (Australia)Chinlon Lin, Bell Laboratory (retired, USA)Xun Li, McMaster University (Canada)Shenggang Liu, University of Electronic Science and Technology of China (China)Jesper Moerk, Technical University of Denmark (Denmark)Dennis L Matthews, University of California, Davis (USA)Jiacong Shen, Jilin University (China)Ping Shum, Nanyang Technological University (Singapore)Chester C T Shu, Chinese University of Hong Kong (China)Valery V Tuchin, Saratov State University (Russia)Bruce Tromberg, University of California/Irvine (USA)Peiheng Wu, University of Nanjing (China)Alan Willner, University of Southern California (USA)Lihong Wang, Washington University in St. Louis (USA)C P Wong, Georgia Institute of Technology (USA)Jianquan Yao, Tianjin University (China)Xi Zhang, Tsinghua University (China)X C Zhang, Rensselaer Polytechnic Institute (USA) Program Committee:Qingming Luo, Wuhan National Laboratory for Optoelectronics (China) - ChairHiroshi Amano, Meijo University (Japan)Yibing Cheng, Monash University (Australia)Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Ruxin Li, Shanghai Institute of Optics and Fine Mechanics (China)Chinlon Lin, Bell Laboratory (USA)Xun Li, McMaster University (Canada)Shenggang Liu, University of Electronic Science and Technology of China (China)Katsumi Midorikawa, Extreme Photonics Research Group, RIKEN (Japan)Jesper Moerk, Technical University of Denmark (Denmark)Valery V Tuchin, Saratov State University (Russia)Lihong Wang, Washington University in St. Louis (USA)Zhong Lin Wang, Georgia Institute of Technology(USA)Jinzhong Yu, Institute of Semiconductor, CAS (China)Jianquan Yao, Tianjin University (China)X C Zhang, Rensselaer Polytechnic Institute (USA) Local Organizing committee:Lin Lin, Wuhan National Laboratory for Optoelectronics (China) - ChairSheng Lu, Administration Committee of Wuhan East Lake Hi-tech Development Zone (China) - ChairChangqing Chen, Wuhan National Laboratory for Optoelectronics (China)Ling Fu, Wuhan National Laboratory for Optoelectronics (China)Hongwei Han, Wuhan National Laboratory for Optoelectronics (China)Peixiang Lu, Wuhan National Laboratory for Optoelectronics (China)Pengcheng Li, Wuhan National Laboratory for Optoelectronics (China)Jinsong Liu, Wuhan National Laboratory for Optoelectronics (China)Junqiang Sun, Wuhan National Laboratory for Optoelectronics (China)Guozhen Shen, Wuhan National Laboratory for Optoelectronics (China)Guoli Tu, Wuhan National Laboratory for Optoelectronics (China)Kecheng Yang, Wuhan National Laboratory for Optoelectronics (China)Xinliang Zhang, Wuhan National Laboratory for Optoelectronics (China)Yuandi Zhao, Wuhan National Laboratory for Optoelectronics (China) Local Secretariat:Xiaochun Xiao, Huazhong University of Science and Technology (China)Weiwei Dong, Huazhong University of Science and Technology (China)
Advanced linear and nonlinear compensations for 16QAM SC-400G unrepeatered transmission system
NASA Astrophysics Data System (ADS)
Zhang, Junwen; Yu, Jianjun; Chien, Hung-Chang
2018-02-01
Digital signal processing (DSP) with both linear equalization and nonlinear compensations are studied in this paper for the single-carrier 400G system based on 65-GBaud 16-quadrature amplitude modulation (QAM) signals. The 16-QAM signals are generated and pre-processed with pre-equalization (Pre-EQ) and Look-up-Table (LUT) based pre-distortion (Pre-DT) at the transmitter (Tx)-side. The implementation principle of training-based equalization and pre-distortion are presented here in this paper with experimental studies. At the receiver (Rx)-side, fiber-nonlinearity compensation based on digital backward propagation (DBP) are also utilized to further improve the transmission performances. With joint LUT-based Pre-DT and DBP-based post-compensation to mitigate the opto-electronic components and fiber nonlinearity impairments, we demonstrate the unrepeatered transmission of 1.6Tb/s based on 4-lane 400G single-carrier PDM-16QAM over 205-km SSMF without distributed amplifier.
NASA Astrophysics Data System (ADS)
Cherri, Abdallah K.
1999-02-01
Trinary signed-digit (TSD) symbolic-substitution-based (SS-based) optical adders, which were recently proposed, are used as the basic modules for designing highly parallel optical multiplications by use of cascaded optical correlators. The proposed multiplications perform carry-free generation of the multiplication partial products of two words in constant time. Also, three different multiplication designs are presented, and new joint spatial encodings for the TSD numbers are introduced. The proposed joint spatial encodings allow one to reduce the SS computation rules involved in optical multiplication. In addition, the proposed joint spatial encodings increase the space bandwidth product of the spatial light modulators of the optical system. This increase is achieved by reduction of the numbers of pixels in the joint spatial encodings for the input TSD operands as well as reduction of the number of pixels used in the proposed matched spatial filters for the optical multipliers.
Cherri, A K
1999-02-10
Trinary signed-digit (TSD) symbolic-substitution-based (SS-based) optical adders, which were recently proposed, are used as the basic modules for designing highly parallel optical multiplications by use of cascaded optical correlators. The proposed multiplications perform carry-free generation of the multiplication partial products of two words in constant time. Also, three different multiplication designs are presented, and new joint spatial encodings for the TSD numbers are introduced. The proposed joint spatial encodings allow one to reduce the SS computation rules involved in optical multiplication. In addition, the proposed joint spatial encodings increase the space-bandwidth product of the spatial light modulators of the optical system. This increase is achieved by reduction of the numbers of pixels in the joint spatial encodings for the input TSD operands as well as reduction of the number of pixels used in the proposed matched spatial filters for the optical multipliers.
All-optical reservoir computing.
Duport, François; Schneider, Bendix; Smerieri, Anteo; Haelterman, Marc; Massar, Serge
2012-09-24
Reservoir Computing is a novel computing paradigm that uses a nonlinear recurrent dynamical system to carry out information processing. Recent electronic and optoelectronic Reservoir Computers based on an architecture with a single nonlinear node and a delay loop have shown performance on standardized tasks comparable to state-of-the-art digital implementations. Here we report an all-optical implementation of a Reservoir Computer, made of off-the-shelf components for optical telecommunications. It uses the saturation of a semiconductor optical amplifier as nonlinearity. The present work shows that, within the Reservoir Computing paradigm, all-optical computing with state-of-the-art performance is possible.
NASA Astrophysics Data System (ADS)
Lee, Seung Yup; Na, Kyounghwan; Pakela, Julia M.; Scheiman, James M.; Yoon, Euisik; Mycek, Mary-Ann
2017-02-01
We present the design, development, and bench-top verification of an innovative compact clinical system including a miniaturized handheld optoelectronic sensor. The integrated sensor was microfabricated with die-level light-emitting diodes and photodiodes and fits into a 19G hollow needle (internal diameter: 0.75 mm) for optical sensing applications in solid tissues. Bench-top studies on tissue-simulating phantoms have verified system performance relative to a fiberoptic based tissue spectroscopy system. With dramatically reduced system size and cost, the technology affords spatially configurable designs for optoelectronic light sources and detectors, thereby enabling customized sensing configurations that would be impossible to achieve with needle-based fiber-optic probes.
NASA Astrophysics Data System (ADS)
Aliverti, Andrea; Pedotti, Antonio; Ferrigno, Giancarlo; Macklem, P. T.
1998-07-01
Although from a respiratory point of view, compartmental volume change or lack of it is the most crucial variable, it has not been possible to measure the volume of chest wall compartments directly. Recently we developed a new method based on a optoelectronic motion analyzer that can give the three-dimensional location of many markers with the temporal and spatial accuracy required for respiratory measurements. Marker's configuration has been designed specifically to measure the volume of three chest wall compartments, the pulmonary and abdominal rib cage compartments and the abdomen, directly. However, it can not track the exact border between the two rib cage compartments (pulmonary and abdominal) which is determined by the cephalic extremity of the area of apposition of the diaphragm to the inner surface of the rib cage, and which can change systematically as a result of disease processes. The diaphragm displacement can be detected by ultrasonography. In the present study, we propose an integrated system able to investigate the relationships between external (chest wall) and internal (diaphragm) movements of the different respiratory structures by simultaneous external imaging with the optoelectronic system combined with internal kinematic imaging using ultrasounds. 2D digitized points belonging to the lower lung margin, taken from ultrasonographic views, are mapped into the 3D space, where chest wall markers are acquired. Results are shown in terms of accuracy of 3D probe location, relative movement between the probe and the body landmarks, dynamic relationships between chest wall volume and position of the diaphragm during quiet breathing, slow inspirations, relaxations and exercise.
NASA Astrophysics Data System (ADS)
Lyu, Yuexi; Han, Xi; Sun, Yaoyao; Jiang, Zhi; Guo, Chunyan; Xiang, Wei; Dong, Yinan; Cui, Jie; Yao, Yuan; Jiang, Dongwei; Wang, Guowei; Xu, Yingqiang; Niu, Zhichuan
2018-01-01
We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high resolution X-ray diffraction (HRXRD) and scanning transmission electron microscope (STEM), phase separation phenomenon of AlInAsSb random alloy with naturally occurring vertical superlattice configuration was demonstrated. To overcome the tendency for phase segregation while maintaining a highly crystalline film, a digital alloy technique with migration-enhanced epitaxy growth method was employed, using a shutter sequence of AlSb, AlAs, AlSb, Sb, In, InAs, In, Sb. AlInAsSb digital alloy has proved to be reproducible and consistent with single phase, showing sharp satellite peaks on HRXRD rocking curve and smooth surface morphology under atomic force microscopy (AFM). Using optimized digital alloy, AlInAsSb separate absorption, grading, charge, and multiplication (SAGCM) APD was grown and fabricated. At room temperature, the device showed high performance with low dark current density of ∼14.1 mA/cm2 at 95% breakdown and maximum stable gain before breakdown as high as ∼200, showing the potential for further applications in optoelectronic devices.
Advances in graphene-based optoelectronics, plasmonics and photonics
NASA Astrophysics Data System (ADS)
Nguyen, Bich Ha; Hieu Nguyen, Van
2016-03-01
Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.
Opto-Electronic Oscillator Using Suppressed Phase Modulation
NASA Technical Reports Server (NTRS)
Dick, G. John; Yu, Nan
2007-01-01
A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.
Research and development on performance models of thermal imaging systems
NASA Astrophysics Data System (ADS)
Wang, Ji-hui; Jin, Wei-qi; Wang, Xia; Cheng, Yi-nan
2009-07-01
Traditional ACQUIRE models perform the discrimination tasks of detection (target orientation, recognition and identification) for military target based upon minimum resolvable temperature difference (MRTD) and Johnson criteria for thermal imaging systems (TIS). Johnson criteria is generally pessimistic for performance predict of sampled imager with the development of focal plane array (FPA) detectors and digital image process technology. Triangle orientation discrimination threshold (TOD) model, minimum temperature difference perceived (MTDP)/ thermal range model (TRM3) Model and target task performance (TTP) metric have been developed to predict the performance of sampled imager, especially TTP metric can provides better accuracy than the Johnson criteria. In this paper, the performance models above are described; channel width metrics have been presented to describe the synthesis performance including modulate translate function (MTF) channel width for high signal noise to ration (SNR) optoelectronic imaging systems and MRTD channel width for low SNR TIS; the under resolvable questions for performance assessment of TIS are indicated; last, the development direction of performance models for TIS are discussed.
High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
NASA Astrophysics Data System (ADS)
Ahmari, David Abbas
Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.
Graphene: an emerging electronic material.
Weiss, Nathan O; Zhou, Hailong; Liao, Lei; Liu, Yuan; Jiang, Shan; Huang, Yu; Duan, Xiangfeng
2012-11-14
Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits. Unadulterated graphene is a semi-metal, incapable of a true off-state, which typically precludes its applications in digital logic electronics without bandgap engineering. The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies. Many challenges remain before this relatively new material becomes commercially viable, but laboratory prototypes have already shown the numerous advantages and novel functionality that graphene provides. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Ke, Jingtang; Pryputniewicz, Ryszard J.
Various papers on the state of the art in laser and optoelectronic technology in industry are presented. Individual topics addressed include: wavelength compensation for holographic optical element, optoelectronic techniques for measurement and inspection, new optical measurement methods in Western Europe, applications of coherent optics at ISL, imaging techniques for gas turbine development, the Rolls-Royce experience with industrial holography, panoramic holocamera for tube and borehole inspection, optical characterization of electronic materials, optical strain measurement of rotating components, quantitative interpretation of holograms and specklegrams, laser speckle technique for hydraulic structural model test, study of holospeckle interferometry, common path shearing fringe scanning interferometer, and laser interferometry applied to nondestructive testing of tires.
Recent advances in flexible and wearable organic optoelectronic devices
NASA Astrophysics Data System (ADS)
Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin
2018-01-01
Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).
Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.
Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T
2015-12-09
Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.
Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.
Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong
2017-02-08
Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe 2 -WSe 2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.
Huang, Kuo-Wei; Su, Ting-Wei; Ozcan, Aydogan; Chiou, Pei-Yu
2013-06-21
We demonstrate an optoelectronic tweezer (OET) coupled to a lensfree holographic microscope for real-time interactive manipulation of cells and micro-particles over a large field-of-view (FOV). This integrated platform can record the holographic images of cells and particles over the entire active area of a CCD sensor array, perform digital image reconstruction to identify target cells, dynamically track the positions of cells and particles, and project light beams to trigger light-induced dielectrophoretic forces to pattern and sort cells on a chip. OET technology has been previously shown to be capable of performing parallel single cell manipulation over a large area. However, its throughput has been bottlenecked by the number of cells that can be imaged within the limited FOV of a conventional microscope objective lens. Integrating lensfree holographic imaging with OET solves this fundamental FOV barrier, while also creating a compact on-chip cell/particle manipulation platform. Using this unique platform, we have successfully demonstrated real-time interactive manipulation of thousands of single cells and micro-particles over an ultra-large area of e.g., 240 mm(2) (i.e. 17.96 mm × 13.52 mm).
Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin.
Kim, Jeonghyun; Salvatore, Giovanni A; Araki, Hitoshi; Chiarelli, Antonio M; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A
2016-08-01
Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have "skin-like" properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics.
Integrated Optoelectronics for Parallel Microbioanalysis
NASA Technical Reports Server (NTRS)
Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur
2003-01-01
Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.
New class of optoelectronic oscillators (OEO) for microwave signal generation and processing
NASA Astrophysics Data System (ADS)
Maleki, Lute; Yao, X. S.
1996-11-01
A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEO's) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetector. Different configurations of OEO's are presented, each of which may be applied to a particular application requiring ultra-high performance, or low cost and small size.
Peumans, Peter; Uchida, Soichi; Forrest, Stephen R.
2013-06-18
Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.
Fast Offset Laser Phase-Locking System
NASA Technical Reports Server (NTRS)
Shaddock, Daniel; Ware, Brent
2008-01-01
Figure 1 shows a simplified block diagram of an improved optoelectronic system for locking the phase of one laser to that of another laser with an adjustable offset frequency specified by the user. In comparison with prior systems, this system exhibits higher performance (including higher stability) and is much easier to use. The system is based on a field-programmable gate array (FPGA) and operates almost entirely digitally; hence, it is easily adaptable to many different systems. The system achieves phase stability of less than a microcycle. It was developed to satisfy the phase-stability requirement for a planned spaceborne gravitational-wave-detecting heterodyne laser interferometer (LISA). The system has potential terrestrial utility in communications, lidar, and other applications. The present system includes a fast phasemeter that is a companion to the microcycle-accurate one described in High-Accuracy, High-Dynamic-Range Phase-Measurement System (NPO-41927), NASA Tech Briefs, Vol. 31, No. 6 (June 2007), page 22. In the present system (as in the previously reported one), beams from the two lasers (here denoted the master and slave lasers) interfere on a photodiode. The heterodyne photodiode output is digitized and fed to the fast phasemeter, which produces suitably conditioned, low-latency analog control signals which lock the phase of the slave laser to that of the master laser. These control signals are used to drive a thermal and a piezoelectric transducer that adjust the frequency and phase of the slave-laser output. The output of the photodiode is a heterodyne signal at the difference between the frequencies of the two lasers. (The difference is currently required to be less than 20 MHz due to the Nyquist limit of the current sampling rate. We foresee few problems in doubling this limit using current equipment.) Within the phasemeter, the photodiode-output signal is digitized to 15 bits at a sampling frequency of 40 MHz by use of the same analog-to-digital converter (ADC) as that of the previously reported phasemeter. The ADC output is passed to the FPGA, wherein the signal is demodulated using a digitally generated oscillator signal at the offset locking frequency specified by the user. The demodulated signal is low-pass filtered, decimated to a sample rate of 1 MHz, then filtered again. The decimated and filtered signal is converted to an analog output by a 1 MHz, 16-bit digital-to-analog converters. After a simple low-pass filter, these analog signals drive the thermal and piezoelectric transducers of the laser.
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
Wanlass, Mark W.; Carapella, Jeffrey J.
2016-01-05
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
Wanlass, Mark W.; Carapella, Jeffrey J.
2014-07-08
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
Wanlass, Mark W.; Carapella, Jeffrey J.
2016-03-22
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
NASA Astrophysics Data System (ADS)
Cao, Binfang; Li, Xiaoqin; Liu, Changqing; Li, Jianqi
2017-08-01
With the further applied transformation of local colleges, teachers are urgently needed to make corresponding changes in the teaching content and methods from different courses. The article discusses practice teaching reform of the Photoelectric Image Processing course in the Optoelectronic Information Science and Engineering major. The Digital Signal Processing (DSP) platform is introduced to the experimental teaching. It will mobilize and inspire students and also enhance their learning motivation and innovation through specific examples. The course via teaching practice process has become the most popular course among students, which will further drive students' enthusiasm and confidence to participate in all kinds of electronic competitions.
Digital holographic otoscope for measurements of the human tympanic membrane in vivo
NASA Astrophysics Data System (ADS)
Dobrev, I.; Harrington, E. J.; Cheng, T.; Furlong, C.; Rosowski, J. J.
We are developing an advanced computer-controlled digital optoelectronic holographic system (DOEHS) for diagnosing middle-ear conductive disorders and investigating the causes of failure of middle-ear surgical procedures. Our current DOEHS system can provide near real-time quantitative measurements of the sound-induced nano-meter scale motion of the eardrum. The DOEHS have been deployed and is currently being tested in clinical conditions, where it is being optimized for in-vivo measurements of patients. The stability of the measurement system during examination is crucial as the non-ideal clinical environment presents disturbances larger than the measured quantities from several domains - thermal, optical, electrical and mechanical. Examples include disturbances are due to heartbeat breathing, patients head's motion as well as environment induced mechanical disturbances (0.1-60Hz, 0.01-100 μm). In this paper we focus on our current progress in the analysis and implementation of various acquisition strategies and algorithms for minimization of the measurement error due to mechanical disturbances in a clinic. We have also developed and implemented a versatile and modular otoscope head (OH) design providing a variety of capabilities for acoustic and displacement measurements of both post-mortem samples of varying sizes (1-12mm) as well as in-vivo examination of patients. The OH offers hybrid on-axis and off axis digital Furrier holographic setup for high resolution (λ/35) 4 phase step measurements as well as fast (<0.1ms) single frame measurements for improved performance in the clinical environment. We also focus on the development of a mechatronic positioning system (MOP) for aiding in the localization of the TM in patients.
Digital optical signal processing with polarization-bistable semiconductor lasers
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jai-Ming Liu,; Ying-Chin Chen,
1985-04-01
The operations of a complete set of optical AND, NAND, OR, and NOR gates and clocked optical S-R, D, J-K, and T flip-flops are demonstrated, based on direct polarization switching and polarization bistability, which we have recently observed in InGaAsP/InP semiconductor lasers. By operating the laser in the direct-polarizationswitchable mode, the output of the laser can be directly switched between the TM00 and TE00 modes with high extinction ratios by changing the injection-current level, and optical logic gates are constructed with two optoelectronic switches or photodetectors. In the polarization-bistable mode, the laser exhibits controllable hysteresis loops in the polarization-resolved powermore » versus current characteristics. When the laser is biased in the middle of the hysteresis loop, the light output can be switched between the two polarization states by injection of short electrical or optical pulses, and clocked optical flip-flops are constructed with a few optoelectronic switches and/or photodetectors. The 1 and 0 states of these devices are defined through polarization changes of the laser and direct complement functions are obtainable from the TE and TM output signals from the same laser. Switching of the polarization-bistable lasers with fast-rising current pulses has an instrument-limited mode-switching time on the order of 1 ns. With fast optoelectronic switches and/or fast photodetectors, the overall switching speed of the logic gates and flip-flops is limited by the polarizationbistable laser to <1 ns. We have demonstrated the operations of these devices using optical signals generated by semiconductor lasers. The proposed schemes of our devices are compatible with monolithic integration based on current fabrication technology and are applicable to other types of bistable semiconductor lasers.« less
Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie
2017-01-30
Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp 2 network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission.
Rapidly-Indexing Incremental-Angle Encoder
NASA Technical Reports Server (NTRS)
Christon, Philip R.; Meyer, Wallace W.
1989-01-01
Optoelectronic system measures relative angular position of shaft or other device to be turned, also measures absolute angular position after device turned through small angle. Relative angular position measured with fine resolution by optoelectronically counting finely- and uniformly-spaced light and dark areas on encoder disk as disk turns past position-sensing device. Also includes track containing coarsely- and nonuniformly-spaced light and dark areas, angular widths varying in proportion to absolute angular position. This second track provides gating and indexing signal.
Experiments On Transparent Conductive Films For Spacecraft
NASA Technical Reports Server (NTRS)
Perez-Davis, Marla E.; Rutledge, Sharon K.; De Groh, Kim K.; Hung, Ching-Cheh; Malave-Sanabria, Tania; Hambourger, Paul; Roig, David
1995-01-01
Report describes experiments on thin, transparent, electrically conductive films made, variously, of indium tin oxide covered by magnesium fluoride (ITO/MgF2), aluminum-doped zinc oxide (AZO), or pure zinc oxide (ZnO). Films are candidates for application to such spacecraft components, including various optoelectronic devices and window surfaces that must be protected against buildup of static electric charge. On Earth, such films useful on heat mirrors, optoelectronic devices, gas sensors, and automotive and aircraft windows.
Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.
Zhao, Yixin; Zhu, Kai
2016-02-07
Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.
NASA Astrophysics Data System (ADS)
Jiang, Shan; Liu, Shuihua
2004-04-01
Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.
NASA Astrophysics Data System (ADS)
Wei, Su-Huai; Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X. G.; Yakobson, Boris I.
Two-dimensional (2D) semiconductors have many unique electronic and optoelectronic properties that is suitable for novel device applications. Most of the current study are focused on group IV or transition metal chalcogenides. In this study, using atomic transmutation and global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide that can overcome shortcomings encountered in conventional 2D semiconducttord. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has unique electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer thickness and strain appliance, and good air stability as well. Therefore, Pma2-SiS is expected to be a very promising 2D material in the field of 2D electronics and optoelectronics. Silicene sulfide also shows similar properties. We believe that the designing principles and approaches used to identify these materials have great potential to accelerate future finding of new functional materials within the 2D families.
Simultaneous thermoelectric and optoelectronic characterization of individual nanowires
Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; ...
2015-11-03
Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less
Interlayer exciton optoelectronics in a 2D heterostructure p–n junction
Ross, Jason S.; Rivera, Pasqual; Schaibley, John; ...
2016-12-22
Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe 2–WSe 2 heterobilayer. Applying a forward bias enablesmore » the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.« less
Solid state carbon nanotube device for controllable trion electroluminescence emission
NASA Astrophysics Data System (ADS)
Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao
2016-03-01
Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07468a
Instruments for Reading Direct-Marked Data-Matrix Symbols
NASA Technical Reports Server (NTRS)
Schramm, Harry F.; Corder, Eric L.
2006-01-01
Improved optoelectronic instruments (specially configured digital cameras) for reading direct-marked data-matrix symbols on the surfaces of optically reflective objects (including specularly reflective ones) are undergoing development. Data-matrix symbols are two-dimensional binary patterns that are used, like common bar codes, for automated identification of objects. The first data-matrix symbols were checkerboard-like patterns of black-and-white rectangles, typically existing in the forms of paint, ink, or detachable labels. The major advantage of direct marking (the marks are more durable than are painted or printed symbols or detachable labels) is offset by a major disadvantage (the marks generated by some marking methods do not provide sufficient contrast to be readable by optoelectronic instruments designed to read black-and-white data-matrix symbols). Heretofore, elaborate lighting, lensing, and software schemes have been tried in efforts to solve the contrast problem in direct-mark matrix- symbol readers. In comparison with prior readers based on those schemes, the readers now undergoing development are expected to be more effective while costing less. All of the prior direct-mark matrix-symbol readers are designed to be aimed perpendicularly to marked target surfaces, and they tolerate very little angular offset. However, the reader now undergoing development not only tolerates angular offset but depends on angular offset as a means of obtaining the needed contrast, as described below. The prototype reader (see Figure 1) includes an electronic camera in the form of a charge-coupled-device (CCD) image detector equipped with a telecentric lens. It also includes a source of collimated visible light and a source of collimated infrared light for illuminating a target. The visible and infrared illumination complement each other: the visible illumination is more useful for aiming the reader toward a target, while the infrared illumination is more useful for reading symbols on highly reflective surfaces. By use of beam splitters, the visible and infrared collimated lights are introduced along the optical path of the telecentric lens, so that the target is illuminated and viewed from the same direction.
Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.
Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung
2016-06-01
Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun
2017-08-01
The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.
Phase-locking and coherent power combining of broadband linearly chirped optical waves.
Satyan, Naresh; Vasilyev, Arseny; Rakuljic, George; White, Jeffrey O; Yariv, Amnon
2012-11-05
We propose, analyze and demonstrate the optoelectronic phase-locking of optical waves whose frequencies are chirped continuously and rapidly with time. The optical waves are derived from a common optoelectronic swept-frequency laser based on a semiconductor laser in a negative feedback loop, with a precisely linear frequency chirp of 400 GHz in 2 ms. In contrast to monochromatic waves, a differential delay between two linearly chirped optical waves results in a mutual frequency difference, and an acoustooptic frequency shifter is therefore used to phase-lock the two waves. We demonstrate and characterize homodyne and heterodyne optical phase-locked loops with rapidly chirped waves, and show the ability to precisely control the phase of the chirped optical waveform using a digital electronic oscillator. A loop bandwidth of ~ 60 kHz, and a residual phase error variance of < 0.01 rad(2) between the chirped waves is obtained. Further, we demonstrate the simultaneous phase-locking of two optical paths to a common master waveform, and the ability to electronically control the resultant two-element optical phased array. The results of this work enable coherent power combining of high-power fiber amplifiers-where a rapidly chirping seed laser reduces stimulated Brillouin scattering-and electronic beam steering of chirped optical waves.
Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin
Kim, Jeonghyun; Salvatore, Giovanni A.; Araki, Hitoshi; Chiarelli, Antonio M.; Xie, Zhaoqian; Banks, Anthony; Sheng, Xing; Liu, Yuhao; Lee, Jung Woo; Jang, Kyung-In; Heo, Seung Yun; Cho, Kyoungyeon; Luo, Hongying; Zimmerman, Benjamin; Kim, Joonhee; Yan, Lingqing; Feng, Xue; Xu, Sheng; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Paik, Ungyu; Rogers, John A.
2016-01-01
Recent advances in materials, mechanics, and electronic device design are rapidly establishing the foundations for health monitoring technologies that have “skin-like” properties, with options in chronic (weeks) integration with the epidermis. The resulting capabilities in physiological sensing greatly exceed those possible with conventional hard electronic systems, such as those found in wrist-mounted wearables, because of the intimate skin interface. However, most examples of such emerging classes of devices require batteries and/or hard-wired connections to enable operation. The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin. Magnetic inductive coupling and near-field communication (NFC) schemes deliver power to multicolored light-emitting diodes and extract digital data from integrated photodetectors in ways that are compatible with standard NFC-enabled platforms, such as smartphones and tablet computers. Examples in the monitoring of heart rate and temporal dynamics of arterial blood flow, in quantifying tissue oxygenation and ultraviolet dosimetry, and in performing four-color spectroscopic evaluation of the skin demonstrate the versatility of these concepts. The results have potential relevance in both hospital care and at-home diagnostics. PMID:27493994
Progress in neuromorphic photonics
NASA Astrophysics Data System (ADS)
Ferreira de Lima, Thomas; Shastri, Bhavin J.; Tait, Alexander N.; Nahmias, Mitchell A.; Prucnal, Paul R.
2017-03-01
As society's appetite for information continues to grow, so does our need to process this information with increasing speed and versatility. Many believe that the one-size-fits-all solution of digital electronics is becoming a limiting factor in certain areas such as data links, cognitive radio, and ultrafast control. Analog photonic devices have found relatively simple signal processing niches where electronics can no longer provide sufficient speed and reconfigurability. Recently, the landscape for commercially manufacturable photonic chips has been changing rapidly and now promises to achieve economies of scale previously enjoyed solely by microelectronics. By bridging the mathematical prowess of artificial neural networks to the underlying physics of optoelectronic devices, neuromorphic photonics could breach new domains of information processing demanding significant complexity, low cost, and unmatched speed. In this article, we review the progress in neuromorphic photonics, focusing on photonic integrated devices. The challenges and design rules for optoelectronic instantiation of artificial neurons are presented. The proposed photonic architecture revolves around the processing network node composed of two parts: a nonlinear element and a network interface. We then survey excitable lasers in the recent literature as candidates for the nonlinear node and microring-resonator weight banks as the network interface. Finally, we compare metrics between neuromorphic electronics and neuromorphic photonics and discuss potential applications.
NASA Astrophysics Data System (ADS)
Kololuoma, Terho K.; Tuomikoski, Markus; Makela, Tapio; Heilmann, Jali; Haring, Tomi; Kallioinen, Jani; Hagberg, Juha; Kettunen, Ilkka; Kopola, Harri K.
2004-06-01
Embedding of optoelectrical, optical, and electrical functionalities into low-cost products like packages and printed matter can be used to increase their information content. These functionalities make also possible the realization of new type of entertaining, impressive or guiding effects on the product packages and printed matter. For these purposes, components like displays, photodetectors, light sources, solar cells, battery elements, diffractive optical elements, lightguides, electrical conductors, resistors, transistors, switching elements etc. and their integration to functional modules are required. Additionally, the price of the components for low-end products has to be in cent scale or preferably below that. Therefore, new, cost-effective, and volume scale capable manufacturing techniques are required. Recent developments of liquid-phase processable electrical and optical polymeric, inorganic, and hybrid materials - inks - have made it possible to fabricate functional electrical, optical and optoelectrical components by conventional roll-to-roll techniques such as gravure printing, embossing, digital printing, offset, and screen printing on flexible paper and plastic like substrates. In this paper, we show our current achievements in the field of roll-to-roll fabricated, optics, electronics and optoelectronics. With few examples, we also demonstrate the printing and hot-embossing capabilities of table scale printing machines and VTT Electronic's 'PICO' roll-to-roll pilot production facility.
Research and Development Annual Report, 1992
NASA Technical Reports Server (NTRS)
1993-01-01
Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 42 additional JSC projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.
The JSC Research and Development Annual Report 1993
NASA Technical Reports Server (NTRS)
1994-01-01
Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 47 additional projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.
Intriguing optoelectronic properties of metal halide perovskites
Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.
2016-06-21
Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX 3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewedmore » with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH 3NH 3PbI 3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less
Development of optical sciences in Poland
NASA Astrophysics Data System (ADS)
Romaniuk, Ryszard S.
2013-10-01
Research and technical communities for optics, photonics and optoelectronics is grouped in this country in several organizations and institutions. These are: Photonics Society of Poland (PSP), Polish Committee of Optoelectronics of SEP, Photonics Section of KEiT PAN, Laser Club at WAT, and Optics Section of PTF. Each of these communities keeps slightly different specificity. PSP publishes a quarterly journal Photonics Letters of Poland, stimulates international cooperation, and organizes conferences during Industrial Fairs on Innovativeness. PKOpto SEP organizes didactic diploma competitions in optoelectronics. KEiT PAN takes patronage over national conferences in laser technology, optical fiber technology and communications, and photonics applications. SO-PTF has recently taken a decision to organize a cyclic event "Polish Optical Conference". The third edition of this conference PKO'2013 was held in Sandomierz on 30.06-04.07.2013. The conference scientific and technical topics include: quantum and nonlinear optics, photon physics, optic and technology of lasers and other sources of coherent radiation, optoelectronics, optical integrated circuits, optical fibers, medical optics, instrumental optics, optical spectroscopy, optical metrology, new optical materials, applications of optics, teaching in optics. This paper reviews chosen works presented during the III Polish Optical Conference (PKO'2013), representing the research efforts at different national institutions.
Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.
2005-06-14
A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.
NASA Technical Reports Server (NTRS)
Vonbraun, C.; Reigber, Christoph
1994-01-01
In the spring of 1993, the MOMS-02 (modular Optoelectronic Multispectral Scanner) camera, as part of the second German Spacelab mission aboard STS-55, successfully took digital threefold stereo images of the surface of the Earth. While the mission is experimental in nature, its primary goals are to produce high quality maps and three-dimensional digital terrain models of the Earth's surface. Considerable improvement in the quality of the terrain model can be attained if information about the position and attitude of the camera is included during the adjustment of the image data. One of the primary sources of error in the Shuttle's position is due to the significant attitude maneuvers conducted during the course of the mission. Various arcs, using actual Tracking and Data Relay Satellite (TDRSS) Doppler data of STS-55, were processed to determine how effectively empirical force modeling could be used to solve for the radial, transverse, and normal components of the orbit perturbations caused by these routine maneuvers. Results are presented in terms of overlap-orbit differences in the three components. Comparisons of these differences, before and after the maneuvers are estimated, show that the quality of an orbit can be greatly enhanced with this technique, even if several maneuvers are present. Finally, a discussion is made of some of the difficulties encountered with this approach, and some ideas for future studies are presented.
Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu
2014-04-01
A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.
Negative terahertz photoconductivity in 2D layered materials.
Lu, Junpeng; Liu, Hongwei; Sun, Jing
2017-11-17
The remarkable qualities of 2D layered materials such as wide spectral coverage, high strength and great flexibility mean that ultrathin 2D layered materials have the potential to meet the criteria of next-generation optoelectronic devices. Photoconductivity is one of the critical parameters of materials applied to optoelectronics. In contrast to traditional semiconductors, specific ultrathin 2D layers present anomalous negative photoconductivity. This opens a new avenue for designing novel optoelectronic devices. It is important to have a deep understanding of the fundamentals of this anomalous response, in order to design and optimize such devices. In this review, we provide an overview of the observation of negative photoconductivity in 2D layered materials including graphene, topological insulators and transitional metal dichalcogenides. We also summarize recent reports on investigations into the fundamental mechanism using ultrafast terahertz (THz) spectroscopies. Finally, we conclude the review by discussing the existing challenges and proposing the possible prospects of this direction of research.
NASA Astrophysics Data System (ADS)
Tsai, Wen-Shing; Lu, Hai-Han; Li, Chung-Yi; Chen, Bo-Rui; Lin, Hung-Hsien; Lin, Dai-Hua
2016-04-01
A hybrid lightwave transmission system based on light injection/optoelectronic feedback techniques and fiber-visible laser light communication (VLLC) integration is proposed and experimentally demonstrated. To be the first one of its kind in employing light injection and optoelectronic feedback techniques in a fiber-VLLC integration lightwave transmission system, the light is successfully directly modulated with Community Access Television (CATV), 16-QAM, and 16-QAM-OFDM signals. Over a 40 km SMF and a 10 m free-space VLLC transport, good performances of carrier-to-noise ratio (CNR)/composite second-order (CSO)/composite triple-beat (CTB)/bit error rate (BER) are achieved for CATV/16-QAM/16-QAM-OFDM signals transmission. Such a hybrid lightwave transmission system would be very useful since it can provide broadband integrated services including CATV, Internet, and telecommunication services over both distribute fiber and in-building networks.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Jr., Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei
Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and an electron transporting layer comprising inorganic nanoparticles dispersed in an organic matrix.
Investigation, study and practice of optoelectronic MOOCs
NASA Astrophysics Data System (ADS)
Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua
2017-08-01
MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.
Semiconductor laser-based optoelectronics oscillators
NASA Astrophysics Data System (ADS)
Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak
1998-08-01
We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.
Optoelectronics education training programs in Scotland
NASA Astrophysics Data System (ADS)
Marsh, John H.
2002-05-01
The optoelectronics industry is of increasing importance to the Scottish economy, with annual sales of 1 billion and it is planned to grow this to 8.8 billion by 2010. The industry already employs around 5,000 people and, in the last year, 800 new jobs were created, including a high percentage filled by graduates and PhDs. One of the major challenges is to provide staff training at all levels: technicians, graduates and postgraduates. A variety of organizations - industry, government, university and professional societies - are working together to meet this challenge.
AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers
NASA Technical Reports Server (NTRS)
Kim, Jae H.
1992-01-01
Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.
Simple Optoelectronic Feedback in Microwave Oscillators
NASA Technical Reports Server (NTRS)
Maleki, Lute; Iltchenko, Vladimir
2009-01-01
A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.
NASA Astrophysics Data System (ADS)
Ironside, C. N.; Haji, Mohsin; Hou, Lianping; Akbar, Jehan; Kelly, Anthony E.; Seunarine, K.; Romeira, Bruno; Figueiredo, José M. L.
2011-05-01
Optoelectronic oscillators can provide low noise oscillators at radio frequencies in the 0.5-40 GHz range and in this paper we review two recently introduced approaches to optoelectronic oscillators. Both approaches use an optical fibre feedback loop. One approach is based on passively modelocked laser diodes and in a 40 GHz oscillator achieves up to 30 dB noise reduction. The other approach is based on resonant tunneling diode optoelectronic devices and in a 1.4 GHz oscillator can achieve up to 30 dB noise reduction.
Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool
NASA Astrophysics Data System (ADS)
Chang, Rang-Seng
1992-05-01
Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.
Single-sided lateral-field and phototransistor-based optoelectronic tweezers
NASA Technical Reports Server (NTRS)
Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)
2011-01-01
Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.
Polarization digital holographic microscopy using low-cost liquid crystal polarization rotators
NASA Astrophysics Data System (ADS)
Dovhaliuk, Rostyslav Yu
2018-02-01
Polarization imaging methods are actively used to study anisotropic objects. A number of methods and systems, such as imaging polarimeters, were proposed to measure the state of polarization of light that passed through the object. Digital holographic and interferometric approaches can be used to quantitatively measure both amplitude and phase of a wavefront. Using polarization modulation optics, the measurement capabilities of such interference-based systems can be extended to measure polarization-dependent parameters, such as phase retardation. Different kinds of polarization rotators can be used to alternate the polarization of a reference beam. Liquid crystals are used in a rapidly increasing number of different optoelectronic devices. Twisted nematic liquid crystals are widely used as amplitude modulators in electronic displays and light valves or shutter glass. Such devices are of particular interest for polarization imaging, as they can be used as polarization rotators, and due to large-scale manufacturing have relatively low cost. A simple Mach-Zehnder polarized holographic setup that uses modified shutter glass as a polarization rotator is demonstrated. The suggested approach is experimentally validated by measuring retardation of quarter-wave film.
NASA Astrophysics Data System (ADS)
Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.
2017-12-01
Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.
NASA Astrophysics Data System (ADS)
Xu, Guowei
Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has unique properties of high carrier mobility, high optical transmittance, chemical inertness and flexibility, making it attractive for electronic and optoelectronic applications, such as graphene transistors, ultrahigh capacitors, transparent conductors (TCs), photodetectors. This work explores novel schemes of nanostructured graphene for optoelectronic applications including advanced TCs and photodetectors. In nanophotonic graphene nanohole arrays patterned using nanoimprinting lithography (NIL), highly efficient chemical doping was achieved on the hole edges. This provides a unique scheme for improving both optical transmittance and electrical conductivity of graphene-based TCs. In plasmonic graphene, Ag nanoparticles were decorated on graphene using thermally assisted self-assembly and NIL. Much enhanced conductivity by a factor of 2-4 was achieved through electron doping in graphene from Ag nanoparticles. More importantly, surface plasmonic effect has been incorporated into plasmonic graphene as advanced TCs with light trapping, which is critical to ultrathin-film optoelectronics such as photovoltaics and photodetectors. Based on plasmonic graphene electric double-layer (EDL) transistor, a novel scheme of photodetection has been demonstrated using plasmonic enhanced local field gating. The resulting tuning of interfacial capacitance as well as the quantum capacitance of graphene manifested as extraordinary photoconductivity and hence photoresponse.
Optoelectronics-related competence building in Japanese and Western firms
NASA Astrophysics Data System (ADS)
Miyazaki, Kumiko
1992-05-01
In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.
NASA Tech Briefs, April 1993. Volume 17, No. 4
NASA Technical Reports Server (NTRS)
1993-01-01
Topics include: Optoelectronics; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery; Fabrication Technology; Mathematics and Information Sciences; Life Sciences;
Recovery of Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter
2017-03-19
Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter William Loh, Siva Yegnanarayanan, Kenneth E. Kolodziej, and Paul...recovery of a weak QPSK signal buried 35-dB beneath an interfering QPSK signal having an overlapping spectrum. This nonlinear optoelectronic filter ...from increased detection sensitivity. Here, we demonstrate an optoelectronic filter that enables the detection of a desired signal hidden beneath a
GaAs Optoelectronic Integrated-Circuit Neurons
NASA Technical Reports Server (NTRS)
Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri
1992-01-01
Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.
NASA Astrophysics Data System (ADS)
Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.
2018-01-01
Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).
Combined reflection and transmission microscope for telemedicine applications in field settings.
Biener, Gabriel; Greenbaum, Alon; Isikman, Serhan O; Lee, Kelvin; Tseng, Derek; Ozcan, Aydogan
2011-08-21
We demonstrate a field-portable upright and inverted microscope that can image specimens in both reflection and transmission modes. This compact and cost-effective dual-mode microscope weighs only ∼135 grams (<4.8 ounces) and utilizes a simple light emitting diode (LED) to illuminate the sample of interest using a beam-splitter cube that is positioned above the object plane. This LED illumination is then partially reflected from the sample to be collected by two lenses, creating a reflection image of the specimen onto an opto-electronic sensor-array that is positioned above the beam-splitter cube. In addition to this, the illumination beam is also partially transmitted through the same specimen, which then casts lensfree in-line holograms of the same objects onto a second opto-electronic sensor-array that is positioned underneath the beam-splitter cube. By rapid digital reconstruction of the acquired lensfree holograms, transmission images (both phase and amplitude) of the same specimen are also created. We tested the performance of this field-portable microscope by imaging various micro-particles, blood smears as well as a histopathology slide corresponding to skin tissue. Being compact, light-weight and cost-effective, this combined reflection and transmission microscope might especially be useful for telemedicine applications in resource limited settings. This journal is © The Royal Society of Chemistry 2011
Šenk, Miroslav; Chèze, Laurence
2010-06-01
Optoelectronic tracking systems are rarely used in 3D studies examining shoulder movements including the scapula. Among the reasons is the important slippage of skin markers with respect to scapula. Methods using electromagnetic tracking devices are validated and frequently applied. Thus, the aim of this study was to develop a new method for in vivo optoelectronic scapular capture dealing with the accepted accuracy issues of validated methods. Eleven arm positions in three anatomical planes were examined using five subjects in static mode. The method was based on local optimisation, and recalculation procedures were made using a set of five scapular surface markers. The scapular rotations derived from the recalculation-based method yielded RMS errors comparable with the frequently used electromagnetic scapular methods (RMS up to 12.6° for 150° arm elevation). The results indicate that the present method can be used under careful considerations for 3D kinematical studies examining different shoulder movements.
Light manipulation for organic optoelectronics using bio-inspired moth's eye nanostructures.
Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong
2014-02-10
Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A(-1) without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.
Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Chu, Junwei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Cheng, Yuhua; Zhai, Tianyou; Li, Liang; Xiong, Jie
2017-12-01
With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe 2 and ReX 2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.
NASA Astrophysics Data System (ADS)
Landowska, A.; Karpienko, K.; Wróbel, M.; Jedrzejewska-Szczerska, M.
2014-11-01
In this article the procedure of selection of physiological parameters for optoelectronic system supporting behavioral therapy of autistic children is proposed. Authors designed and conducted an experiment in which a group of 30 health volunteers (16 females and 14 males) were examined. Under controlled conditions people were exposed to a stressful situation caused by the picture or sound (1kHz constant sound, which was gradually silenced and finished with a shot sound). For each of volunteers, a set of physiological parameters were recorded, including: skin conductance, heart rate, peripheral temperature, respiration rate and electromyography. The selected characteristics were measured in different locations in order to choose the most suitable one for the designed therapy supporting system. The bio-statistical analysis allowed us to discern the proper physiological parameters that are most associated to changes due to emotional state of a patient, such as: skin conductance, temperatures and respiration rate. This allowed us to design optoelectronic sensors network for supporting behavioral therapy of children with autism.
DOE Office of Scientific and Technical Information (OSTI.GOV)
SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.
2003-03-01
Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vitalmore » step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.« less
Chain conformations and phase behavior of conjugated polymers.
Kuei, Brooke; Gomez, Enrique D
2016-12-21
Conjugated polymers may play an important role in various emerging optoelectronic applications because they combine the chemical versatility of organic molecules and the flexibility, stretchability and toughness of polymers with semiconducting properties. Nevertheless, in order to achieve the full potential of conjugated polymers, a clear description of how their structure, morphology, and macroscopic properties are interrelated is needed. We propose that the starting point for understanding conjugated polymers includes understanding chain conformations and phase behavior. Efforts to predict and measure the persistence length have significantly refined our intuition of the chain stiffness, and have led to predictions of nematic-to-isotropic transitions. Exploring mixing between conjugated polymers and small molecules or other polymers has demonstrated tremendous advancements in attaining the needed properties for various optoelectronic devices. Current efforts continue to refine our knowledge of chain conformations and phase behavior and the factors that influence these properties, thereby providing opportunities for the development of novel optoelectronic materials based on conjugated polymers.
Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.
Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling
2017-10-24
Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.
32 x 16 CMOS smart pixel array for optical interconnects
NASA Astrophysics Data System (ADS)
Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.
2000-05-01
Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.
Two Unipolar Terminal-Attractor-Based Associative Memories
NASA Technical Reports Server (NTRS)
Liu, Hua-Kuang; Wu, Chwan-Hwa
1995-01-01
Two unipolar mathematical models of electronic neural network functioning as terminal-attractor-based associative memory (TABAM) developed. Models comprise sets of equations describing interactions between time-varying inputs and outputs of neural-network memory, regarded as dynamical system. Simplifies design and operation of optoelectronic processor to implement TABAM performing associative recall of images. TABAM concept described in "Optoelectronic Terminal-Attractor-Based Associative Memory" (NPO-18790). Experimental optoelectronic apparatus that performed associative recall of binary images described in "Optoelectronic Inner-Product Neural Associative Memory" (NPO-18491).
High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications
NASA Technical Reports Server (NTRS)
Connolly, J. C.; Goldstein, B.; Pultz, G. N.; Slavin, S. E.; Carlin, D. B.; Ettenberg, M.
1988-01-01
A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.
Optoelectronic switch matrix as a look-up table for residue arithmetic.
Macdonald, R I
1987-10-01
The use of optoelectronic matrix switches to perform look-up table functions in residue arithmetic processors is proposed. In this application, switchable detector arrays give the advantage of a greatly reduced requirement for optical sources by comparison with previous optoelectronic residue processors.
Wagner, Arne; Seemann, Rudolf; Schicho, Kurt; Ewers, Rolf; Piehslinger, Eva
2003-11-01
Currently available systems for pantographic tracing are heavy, bulky, and can interfere with jaw movements. This study describes the development and clinical application of optoelectronic axiography designed to overcome system inherent problems of conventional bulky frame-based registration axiography. The purpose of this study is the comparison of the newly developed system and conventional axiography. Three-dimensional recordings of condylar pathways were acquired by means of infrared digitizers interfaced to newly developed software. Ten distinct curves in each of 10 subjects were recorded by synchronous optoelectronic axiography (100 tracings) and by conventional axiography (100 tracings). Usually, two 3-dimensional (3D) light weight sensors are provisionally fixed to the facial surface of a maxillary and mandibular incisor by means of a single orthodontic bracket. To allow for direct comparison of all 100 pairs of curves in this study, the 3D sensors of the optoelectronic system were attached to the bulky double face-bow system of the axiograph. The conformity of tracings (protrusion, opening/closing, mediotrusion, and laterotrusion) was evaluated by means of correlation analysis. Resulting axiographic recordings from both systems were evaluated by 3 experts (dentists, experienced in axiographic investigations, who were blind to the source of the data), focusing on standardized qualitative criteria of the recordings (homogeneity/smoothness, pathway-characteristics, excursion, and left/right-symmetry). After testing for normal distribution of the ratio scaled data (length of pathway, horizontal condylar inclination [HCI], Bennett angle) with the Kolmogoroff-Smirnov test (alpha=.01), axiographic curves were quantitatively compared by means of an intraclass correlation coefficient ([ICC] alpha =.01). The Wilcoxon test (alpha=.01) was used to evaluate equivalence of ordinally scaled values (homogeneity of tracings) and Cohen's Kappa was used to compare excursion and left/right symmetry. High correspondence between curves recorded by conventional and optoelectronic axiography was observed. The mean differences of lengths between the protrusive, opening/closing, and mediotrusive pathways were 0.0 mm, 0.6 mm, and 0.1 mm, respectively. Pathways and values for HCI were found highly correlated (pathways: 95% CI of ICC 0.9776-0.9908; HCI: 95% CI of ICC 0.8641-0.9597). The 95% CIs for differences of pathways, HCI-value, and Bennett angle were -0.1mm/0.3mm, -3.4 degrees/1.9 degrees, and -2.8 degrees/4.8 degrees, respectively. Pathway characteristics also corresponded well (Cohen's Kappa: 0.73 for symmetric and 0.72 for asymmetric movements), 0.77 for left/right symmetry, whereas other characteristics showed less significant correlation (Cohen's Kappa of excursion: 0.21 for symmetric and 0.09 for asymmetric movements, homogeneity: 0.08 for symmetric and 0.15 for asymmetric movements). Within the limitations of this study, optoelectronic axiography proved to be an applicable, promising technique, leading to diagnostic interpretations equivalent (with respect to the CIs) to conventional axiography.
Organic Photodiodes: The Future of Full Color Detection and Image Sensing.
Jansen-van Vuuren, Ross D; Armin, Ardalan; Pandey, Ajay K; Burn, Paul L; Meredith, Paul
2016-06-01
Major growth in the image sensor market is largely as a result of the expansion of digital imaging into cameras, whether stand-alone or integrated within smart cellular phones or automotive vehicles. Applications in biomedicine, education, environmental monitoring, optical communications, pharmaceutics and machine vision are also driving the development of imaging technologies. Organic photodiodes (OPDs) are now being investigated for existing imaging technologies, as their properties make them interesting candidates for these applications. OPDs offer cheaper processing methods, devices that are light, flexible and compatible with large (or small) areas, and the ability to tune the photophysical and optoelectronic properties - both at a material and device level. Although the concept of OPDs has been around for some time, it is only relatively recently that significant progress has been made, with their performance now reaching the point that they are beginning to rival their inorganic counterparts in a number of performance criteria including the linear dynamic range, detectivity, and color selectivity. This review covers the progress made in the OPD field, describing their development as well as the challenges and opportunities. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors
NASA Astrophysics Data System (ADS)
Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas
2017-03-01
Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.
GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.
Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Wasisto, Hutomo Suryo; Waag, Andreas
2017-03-03
Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.
A low power flash-FPGA based brain implant micro-system of PID control.
Lijuan Xia; Fattah, Nabeel; Soltan, Ahmed; Jackson, Andrew; Chester, Graeme; Degenaar, Patrick
2017-07-01
In this paper, we demonstrate that a low power flash FPGA based micro-system can provide a low power programmable interface for closed-loop brain implant inter- faces. The proposed micro-system receives recording local field potential (LFP) signals from an implanted probe, performs closed-loop control using a first order control system, then converts the signal into an optogenetic control stimulus pattern. Stimulus can be implemented through optoelectronic probes. The long term target is for both fundamental neuroscience applications and for clinical use in treating epilepsy. Utilizing our device, closed-loop processing consumes only 14nJ of power per PID cycle compared to 1.52μJ per cycle for a micro-controller implementation. Compared to an application specific digital integrated circuit, flash FPGA's are inherently programmable.
Character Recognition Using Novel Optoelectronic Neural Network
1993-04-01
interest will include machine learning and perception. Permanent Address: William M. Robinson c/o Dave and Judy Bartine 117 Westcliff Drive Harriman, TN 37748 This thesis was typed by William M. Robinson. 190 END
Experimental Optoelectronic Associative Memory
NASA Technical Reports Server (NTRS)
Chao, Tien-Hsin
1992-01-01
Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.
Remote optoelectronic sensors for monitoring of nonlinear surfaces
NASA Astrophysics Data System (ADS)
Petrochenko, Andrew V.; Konyakhin, Igor A.
2015-05-01
Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.
Optoelectronic Devices and Materials
NASA Astrophysics Data System (ADS)
Sweeney, Stephen; Adams, Alfred
Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.
A New Regime of Nanoscale Thermal Transport: Collective Diffusion Increases Dissipation Efficiency
2015-04-21
including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics , and nanoparticle-mediated...applications including thermoelectrics for energyharvesting, nanoparticle-mediated thermal therapy, nano- enhanced photovoltaics , and thermal... thermoelectric devices, nanoparticle- mediated thermal therapies, and nanoenhanced photovoltaics for improving clean-energy technologies. Author contributions
Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Li, Liang
2017-01-01
Abstract With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed. PMID:29270337
NASA Technical Reports Server (NTRS)
Farhat, Nabil H.
1987-01-01
Self-organization and learning is a distinctive feature of neural nets and processors that sets them apart from conventional approaches to signal processing. It leads to self-programmability which alleviates the problem of programming complexity in artificial neural nets. In this paper architectures for partitioning an optoelectronic analog of a neural net into distinct layers with prescribed interconnectivity pattern to enable stochastic learning by simulated annealing in the context of a Boltzmann machine are presented. Stochastic learning is of interest because of its relevance to the role of noise in biological neural nets. Practical considerations and methodologies for appreciably accelerating stochastic learning in such a multilayered net are described. These include the use of parallel optical computing of the global energy of the net, the use of fast nonvolatile programmable spatial light modulators to realize fast plasticity, optical generation of random number arrays, and an adaptive noisy thresholding scheme that also makes stochastic learning more biologically plausible. The findings reported predict optoelectronic chips that can be used in the realization of optical learning machines.
Time-Resolved Measurements in Optoelectronic Microbioanalysis
NASA Technical Reports Server (NTRS)
Bearman, Gregory; Kossakovski, Dmitri
2003-01-01
A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.
Chemical and charge transfer studies on interfaces of a conjugated polymer and ITO
NASA Astrophysics Data System (ADS)
David, Tanya M. S.; Arasho, Wondwosson; Smith, O'Neil; Hong, Kunlun; Bonner, Carl; Sun, Sam-Shajing
2017-08-01
Conjugated oligomers and polymers are very attractive for potential future plastic electronic and opto-electronic device applications such as plastic photo detectors and solar cells, thermoelectric devices, field effect transistors, and light emitting diodes. Understanding and optimizing charge transport between an active polymer layer and conductive substrate is critical to the optimization of polymer based electronic and opto-electronic devices. This study focused on the design, synthesis, self-assembly, and electron transfers and transports of a phosphonic acid end-functionalized polyphenylenevinylene (PPV) that was covalently attached and self-assembled onto an Indium Tin Oxide (ITO) substrate. This study demonstrated how atomic force microscopy (AFM) can be an effective characterization technique in conjunction with conventional electron transfer methods, including cyclic voltammetry (CV), towards determining electron transfer rates in polymer and polymer/conductor interface systems. This study found that the electron transfer rates of covalently attached and self-assembled films were much faster than the spin coated films. The knowledge from this study can be very useful for designing potential polymer based electronic and opto-electronic thin film devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.
Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX 3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewedmore » with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH 3NH 3PbI 3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less
Securing Information with Complex Optical Encryption Networks
2015-08-11
Network Security, Network Vulnerability , Multi-dimentional Processing, optoelectronic devices 16. SECURITY CLASSIFICATION OF: 17. LIMITATION... optoelectronic devices and systems should be analyzed before the retrieval, any hostile hacker will need to possess multi-disciplinary scientific...sophisticated optoelectronic principles and systems where he/she needs to process the information. However, in the military applications, most military
PINPIN a-Si:H based structures for X-ray image detection using the laser scanning technique
NASA Astrophysics Data System (ADS)
Fernandes, M.; Vygranenko, Y.; Vieira, M.
2015-05-01
Conventional film based X-ray imaging systems are being replaced by their digital equivalents. Different approaches are being followed by considering direct or indirect conversion, with the later technique dominating. The typical, indirect conversion, X-ray panel detector uses a phosphor for X-ray conversion coupled to a large area array of amorphous silicon based optical sensors and a couple of switching thin film transistors (TFT). The pixel information can then be readout by switching the correspondent line and column transistors, routing the signal to an external amplifier. In this work we follow an alternative approach, where the electrical switching performed by the TFT is replaced by optical scanning using a low power laser beam and a sensing/switching PINPIN structure, thus resulting in a simpler device. The optically active device is a PINPIN array, sharing both front and back electrical contacts, deposited over a glass substrate. During X-ray exposure, each sensing side photodiode collects photons generated by the scintillator screen (560 nm), charging its internal capacitance. Subsequently a laser beam (445 nm) scans the switching diodes (back side) retrieving the stored charge in a sequential way, reconstructing the image. In this paper we present recent work on the optoelectronic characterization of the PINPIN structure to be incorporated in the X-ray image sensor. The results from the optoelectronic characterization of the device and the dependence on scanning beam parameters are presented and discussed. Preliminary results of line scans are also presented.
Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.
Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A
2016-09-14
We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
Recent Advances in Biointegrated Optoelectronic Devices.
Xu, Huihua; Yin, Lan; Liu, Chuan; Sheng, Xing; Zhao, Ni
2018-05-28
With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Private sector data collection on optoelectronics markets and technologies in the U.S.
NASA Astrophysics Data System (ADS)
Polishuk, Paul J.; Taylor, K.
1992-05-01
Information Gatekeepers Inc. has been in the business of collecting and analyzing information in the fiber optics and optoelectronics industries for the past fourteen years through its publishing and consulting businesses. Since optoelectronic technologies are well reported by the scientific journals and conferences, only data on markets, competitive trends, production capabilities, etc., are discussed in this paper. The paper reviews the present situation of private sector data collection on optoelectronics technologies and markets, the problems that exist in data collection, and possible solutions to what is perceived as a serious national problem.
Prototype Focal-Plane-Array Optoelectronic Image Processor
NASA Technical Reports Server (NTRS)
Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey
1995-01-01
Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.
Millimeter-wave and optoelectronic applications of heterostructure integrated circuits
NASA Technical Reports Server (NTRS)
Pavlidis, Dimitris
1991-01-01
The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.
Millimeter-wave and optoelectronic applications of heterostructure integrated circuits
NASA Astrophysics Data System (ADS)
Pavlidis, Dimitris
1991-02-01
The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.
Fused thiophene-based conjugated polymers and their use in optoelectronic devices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Facchetti, Antonio; Marks, Tobin J.; Takai, Atsuro
The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked tomore » the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.« less
NASA Astrophysics Data System (ADS)
Zheng, Zhaoqiang; Zhang, Tanmei; Yao, Jiandomg; Zhang, Yi; Xu, Jiarui; Yang, Guowei
2016-06-01
Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W-1, external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.
Digital holographic-based cancellable biometric for personal authentication
NASA Astrophysics Data System (ADS)
Verma, Gaurav; Sinha, Aloka
2016-05-01
In this paper, we propose a new digital holographic-based cancellable biometric scheme for personal authentication and verification. The realization of cancellable biometric is presented by using an optoelectronic experimental approach, in which an optically recorded hologram of the fingerprint of a person is numerically reconstructed. Each reconstructed feature has its own perspective, which is utilized to generate user-specific fingerprint features by using a feature-extraction process. New representations of the user-specific fingerprint features can be obtained from the same hologram, by changing the reconstruction distance (d) by an amount Δd between the recording plane and the reconstruction plane. This parameter is the key to make the cancellable user-specific fingerprint features using a digital holographic technique, which allows us to choose different reconstruction distances when reissuing the user-specific fingerprint features in the event of compromise. We have shown theoretically that each user-specific fingerprint feature has a unique identity with a high discrimination ability, and the chances of a match between them are minimal. In this aspect, a recognition system has also been demonstrated using the fingerprint biometric of the enrolled person at a particular reconstruction distance. For the performance evaluation of a fingerprint recognition system—the false acceptance ratio, the false rejection ratio and the equal error rate are calculated using correlation. The obtained results show good discrimination ability between the genuine and the impostor populations with the highest recognition rate of 98.23%.
NASA Astrophysics Data System (ADS)
Evtikhiev, N. N.; Esepkina, N. A.; Dolgii, V. A.; Lavrov, A. P.; Khotyanov, B. M.; Chernokozhin, V. V.; Shestak, S. A.
1995-10-01
An optoelectronic processor in the form of a hybrid microcircuit is described. An analysis is made of the feasibility of developing a new class of optoelectronic processors which are hybrid microcircuits and can operate both as self-contained specialised computers and also as functional components of computing systems.
Optoelectronic hit/miss transform for screening cervical smear slides
NASA Astrophysics Data System (ADS)
Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.
1995-06-01
An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.
Six Classes of Diffraction-Based Optoelectronic Instruments
NASA Technical Reports Server (NTRS)
Spremo, Stevan; Fuhr, Peter; Schipper, John
2003-01-01
Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.
Structured organic materials and devices using low-energy particle beams
Vardeny, Z. Valy; Li, Sergey; Delong, Matthew C.; Jiang, Xiaomei
2005-09-13
Organic materials exposed to an electron beam for patterning a substrate (1) to make an optoelectronic organic device which includes a source, a drain, gate dielectric layer (4), and a substrate for emitting light.
Multi-Axis Force/Torque Sensor Based on Simply-Supported Beam and Optoelectronics.
Noh, Yohan; Bimbo, Joao; Sareh, Sina; Wurdemann, Helge; Fraś, Jan; Chathuranga, Damith Suresh; Liu, Hongbin; Housden, James; Althoefer, Kaspar; Rhode, Kawal
2016-11-17
This paper presents a multi-axis force/torque sensor based on simply-supported beam and optoelectronic technology. The sensor's main advantages are: (1) Low power consumption; (2) low-level noise in comparison with conventional methods of force sensing (e.g., using strain gauges); (3) the ability to be embedded into different mechanical structures; (4) miniaturisation; (5) simple manufacture and customisation to fit a wide-range of robot systems; and (6) low-cost fabrication and assembly of sensor structure. For these reasons, the proposed multi-axis force/torque sensor can be used in a wide range of application areas including medical robotics, manufacturing, and areas involving human-robot interaction. This paper shows the application of our concept of a force/torque sensor to flexible continuum manipulators: A cylindrical MIS (Minimally Invasive Surgery) robot, and includes its design, fabrication, and evaluation tests.
Multi-Axis Force/Torque Sensor Based on Simply-Supported Beam and Optoelectronics
Noh, Yohan; Bimbo, Joao; Sareh, Sina; Wurdemann, Helge; Fraś, Jan; Chathuranga, Damith Suresh; Liu, Hongbin; Housden, James; Althoefer, Kaspar; Rhode, Kawal
2016-01-01
This paper presents a multi-axis force/torque sensor based on simply-supported beam and optoelectronic technology. The sensor’s main advantages are: (1) Low power consumption; (2) low-level noise in comparison with conventional methods of force sensing (e.g., using strain gauges); (3) the ability to be embedded into different mechanical structures; (4) miniaturisation; (5) simple manufacture and customisation to fit a wide-range of robot systems; and (6) low-cost fabrication and assembly of sensor structure. For these reasons, the proposed multi-axis force/torque sensor can be used in a wide range of application areas including medical robotics, manufacturing, and areas involving human–robot interaction. This paper shows the application of our concept of a force/torque sensor to flexible continuum manipulators: A cylindrical MIS (Minimally Invasive Surgery) robot, and includes its design, fabrication, and evaluation tests. PMID:27869689
Shin, Dongsuk; Pierce, Mark C; Gillenwater, Ann M; Williams, Michelle D; Richards-Kortum, Rebecca R
2010-06-23
Early detection is an essential component of cancer management. Unfortunately, visual examination can often be unreliable, and many settings lack the financial capital and infrastructure to operate PET, CT, and MRI systems. Moreover, the infrastructure and expense associated with surgical biopsy and microscopy are a challenge to establishing cancer screening/early detection programs in low-resource settings. Improvements in performance and declining costs have led to the availability of optoelectronic components, which can be used to develop low-cost diagnostic imaging devices for use at the point-of-care. Here, we demonstrate a fiber-optic fluorescence microscope using a consumer-grade camera for in vivo cellular imaging. The fiber-optic fluorescence microscope includes an LED light, an objective lens, a fiber-optic bundle, and a consumer-grade digital camera. The system was used to image an oral cancer cell line labeled with 0.01% proflavine. A human tissue specimen was imaged following surgical resection, enabling dysplastic and cancerous regions to be evaluated. The oral mucosa of a healthy human subject was imaged in vivo, following topical application of 0.01% proflavine. The fiber-optic microscope resolved individual nuclei in all specimens and tissues imaged. This capability allowed qualitative and quantitative differences between normal and precancerous or cancerous tissues to be identified. The optical efficiency of the system permitted imaging of the human oral mucosa in real time. Our results indicate this device as a useful tool to assist in the identification of early neoplastic changes in epithelial tissues. This portable, inexpensive unit may be particularly appropriate for use at the point-of-care in low-resource settings.
Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.
Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing
2017-06-01
p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors
NASA Astrophysics Data System (ADS)
Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda
2017-07-01
Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.
Novel optoelectronic methodology for testing of MOEMS
NASA Astrophysics Data System (ADS)
Pryputniewicz, Ryszard J.; Furlong, Cosme
2003-01-01
Continued demands for delivery of high performance micro-optoelectromechanical systems (MOEMS) place unprecedented requirements on methods used in their development and operation. Metrology is a major and inseparable part of these methods. Optoelectronic methodology is an essential field of metrology. Due to its scalability, optoelectronic methodology is particularly suitable for testing of MOEMS where measurements must be made with ever increasing accuracy and precision. This was particularly evident during the last few years, characterized by miniaturization of devices, when requirements for measurements have rapidly increased as the emerging technologies introduced new products, especially, optical MEMS. In this paper, a novel optoelectronic methodology for testing of MOEMS is described and its applications are illustrated with representative examples. These examples demonstrate capability to measure submicron deformations of various components of the micromirror device, under operating conditions, and show viability of the optoelectronic methodology for testing of MOEMS.
NASA Astrophysics Data System (ADS)
Carter, Andrew C.; Wale, Michael J.; Simmons, T.; Whitbread, Neil; Asghari, M.
2003-06-01
A key attribute emerging in the optoelectronic component supply industry is the ability to deliver 'solution level' products rather than discrete optical components to equipment manufacturers. This approach is primarily aimed at reducing cost for the equipment manufacturer both in engineering and assembly. Such 'solutions' must be designed to be cost effective - offering costs substantially below discrete components - and must be compatible with subcontract board manufacture without the traditional and expensive skills of fibre handling, splicing and management. Examples of 'solutions' in this context may be the core of a multifunctional OADM or a DWDM laser transmitter subsystem, with modulation, wavelength and power management all included in a simple to use module. Essential to the cost effective production of such solutions is a high degree of optical/optoelectronic integration. Co-packaging of discrete components and electronics into modules will not deliver the cost reduction demanded. At Bookham Technology we have brought together what we believe to be the three key integration technologies - InP for monolithic tunable sources, GaAs for high performance integrated modulation and ASOC for smart passives and hybrid platforms - which can deliver this cost reduction, together with performance enhancement, over a wide range of applications. In the paper we will demonstrate and compare our above integration approaches with the competing alternatives and seek to show how the power of integration is finally being harnessed in optoelectronics, delivering radical cost reduction as well as enabling system concepts virtually impossible to achieve with discrete components. In the paper we will demonstrate and compare our above integration approaches with the competing alternatives and seek to show how the power of integration is finally being harnessed in optoelectronics, delivering radical cost reduction as well as enabling system concepts virtually impossible to achieve with discrete components.
Symmetric Gain Optoelectronic Mixers for LADAR
2008-12-01
photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the optoelectronic mixer allows the following transimpedance ...output is the low frequency difference signal, several orders of magnitude lower than the LO signal. Therefore, the gain of the transimpedance ... amplifier (TZA) following the photodetector can be increased, improving LADAR range. The metal-semiconductor- metal (MSM) Schottky detector is such a
Epidermal Inorganic Optoelectronics for Blood Oxygen Measurement.
Li, Haicheng; Xu, Yun; Li, Xiaomin; Chen, Ying; Jiang, Yu; Zhang, Changxing; Lu, Bingwei; Wang, Jian; Ma, Yinji; Chen, Yihao; Huang, Yin; Ding, Minquang; Su, Honghong; Song, Guofeng; Luo, Yi; Feng, X
2017-05-01
Flexible and stretchable optoelectronics, built-in inorganic semiconductor materials, offer a wide range of unprecedented opportunities and will redefine the conventional rigid optoelectronics in biological application and medical measurement. However, a significant bottleneck lies in the brittleness nature of rigid semiconductor materials and the performance's extreme sensitivity to the light intensity variation due to human skin deformation while measuring physical parameters. In this study, the authors demonstrate a systematic strategy to design an epidermal inorganic optoelectronic device by using specific strain-isolation design, nanodiamond thinning, and hybrid transfer printing. The authors propose all-in-one suspension structure to achieve the stretchability and conformability for surrounding environment, and they propose a two-step transfer printing method for hybrid integrating III-V group emitting elements, Si-based photodetector, and interconnects. Owing to the excellent flexibility and stretchability, such device is totally conformal to skin and keeps the constant light transmission between emitting element and photodetector as well as the signal stability due to skin deformation. This method opens a route for traditional inorganic optoelectronics to achieve flexibility and stretchability and improve the performance of optoelectronics for biomedical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Studies in optical parallel processing. [All optical and electro-optic approaches
NASA Technical Reports Server (NTRS)
Lee, S. H.
1978-01-01
Threshold and A/D devices for converting a gray scale image into a binary one were investigated for all-optical and opto-electronic approaches to parallel processing. Integrated optical logic circuits (IOC) and optical parallel logic devices (OPA) were studied as an approach to processing optical binary signals. In the IOC logic scheme, a single row of an optical image is coupled into the IOC substrate at a time through an array of optical fibers. Parallel processing is carried out out, on each image element of these rows, in the IOC substrate and the resulting output exits via a second array of optical fibers. The OPAL system for parallel processing which uses a Fabry-Perot interferometer for image thresholding and analog-to-digital conversion, achieves a higher degree of parallel processing than is possible with IOC.
O’Sullivan, Thomas D.; Heitz, Roxana T.; Parashurama, Natesh; Barkin, David B.; Wooley, Bruce A.; Gambhir, Sanjiv S.; Harris, James S.; Levi, Ofer
2013-01-01
Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm3 and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant. PMID:24009996
Injectable, cellular-scale optoelectronics with applications for wireless optogenetics.
Kim, Tae-il; McCall, Jordan G; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, Gunchul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A; Bruchas, Michael R
2013-04-12
Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.
Materials for optoelectronic devices
Shiang, Joseph John; Smigelski, Jr., Paul Michael
2015-01-27
Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.
Shape-Dependent Optoelectronic Cell Lysis**
Kremer, Clemens; Witte, Christian; Neale, Steven L; Reboud, Julien; Barrett, Michael P; Cooper, Jonathan M
2014-01-01
We show an electrical method to break open living cells amongst a population of different cell types, where cell selection is based upon their shape. We implement the technique on an optoelectronic platform, where light, focused onto a semiconductor surface from a video projector creates a reconfigurable pattern of electrodes. One can choose the area of cells to be lysed in real-time, from single cells to large areas, simply by redrawing the projected pattern. We show that the method, based on the “electrical shadow” that the cell casts, allows the detection of rare cell types in blood (including sleeping sickness parasites), and has the potential to enable single cell studies for advanced molecular diagnostics, as well as wider applications in analytical chemistry. PMID:24402800
4 channels x 10-Gbps optoelectronic transceiver based on silicon optical bench technology
NASA Astrophysics Data System (ADS)
Chen, Chin T.; Hsiao, Hsu L.; Chang, Chia. C.; Shen, Po K.; Lu, Guan F.; Lee, Yun C.; Chang, Shou F.; Lin, Yo S.; Wu, Mount L.
2012-01-01
In this paper, a bi-directional 4-channel x 10-Gbps optoelectronic transceiver based on this silicon optical bench (SiOB) technology is developed. A bi-directional optical sub-assembly (BOSA), fiber ribbon assembly, PCB with high frequency trace design, transmitter driver, and receiver TIA IC are included in this transceiver. The BOSA and PCB also have some specific design for conventional chip-on-board (COB) process. In eye diagram measurement, the transmitter can pass 10-G Ethernet eye mask with 25% margin at room temperature; Bit-error-rate (BER) performance from the transmitter to receiver via 10-meter fiber can achieve 10-12 order, which confirm the transceiver's ability of 10-Gbps data transmission per a channel.
Opto-electronic characterization of third-generation solar cells.
Neukom, Martin; Züfle, Simon; Jenatsch, Sandra; Ruhstaller, Beat
2018-01-01
We present an overview of opto-electronic characterization techniques for solar cells including light-induced charge extraction by linearly increasing voltage, impedance spectroscopy, transient photovoltage, charge extraction and more. Guidelines for the interpretation of experimental results are derived based on charge drift-diffusion simulations of solar cells with common performance limitations. It is investigated how nonidealities like charge injection barriers, traps and low mobilities among others manifest themselves in each of the studied cell characterization techniques. Moreover, comprehensive parameter extraction for an organic bulk-heterojunction solar cell comprising PCDTBT:PC 70 BM is demonstrated. The simulations reproduce measured results of 9 different experimental techniques. Parameter correlation is minimized due to the combination of various techniques. Thereby a route to comprehensive and accurate parameter extraction is identified.
Li, Ting; Zhong, Fulin; Pan, Boan; Li, Zebin; Huang, Chong; Deng, Zishan
2017-01-01
The optoelectronic sensor OPT101 have merits in advanced optoelectronic response characteristics at wavelength range for medical near-infrared spectroscopy and small-size chip design with build-in trans-impedance amplifier. Our lab is devoted to developing a series of portable near-infrared spectroscopy (NIRS) devices embedded with OPT101 for applications in intensive care unit clinics, based on NIRS principle. Here we review the characteristics and advantages of OPT101 relative to clinical NIRS instrumentation, and the most recent achievements, including early-diagnosis and therapeutic effect evaluation of thrombus, noninvasive monitoring of patients' shock severity, and fatigue evaluation. The future prospect on OPT101 improvements in noninvasive clinical applications is also discussed. PMID:28757564
Controlled formation of GeSi nanostructures on pillar-patterned Si substrate
NASA Astrophysics Data System (ADS)
Zhou, Tong; Zeng, Ceng; Fan, Yongliang; Jiang, Zuimin; Xia, Jinsong; Zhong, Zhenyang; Fudan University Team; Huazhong University of Science; Technology Collaboration
2015-03-01
GeSi quantum nanostructures (QNs) have potential applications in optoelectronic devices due to their unique properties and compatibility with the sophisticated Si technology. However, the disadvantages of poor quantum efficiency of the GeSi QNs on flat Si (001) substrates hinder their optoelectronic applications. Today, numerous growth strategies have been proposed to control the formation of GeSi QNs in hope of improving the optoelectronic performances. One of the ways is to fabricate GeSi QNs on patterned substrates, where the GeSi QNs can be greatly manipulated in aspects of size, shape, composition, orientation and arrangement. Here, self-assembled GeSi QNs on periodic Si (001) sub-micro pillars (SPMs) are systematically studied. By controlling the growth conditions and the diameters of the SPMs, different GeSi QNs, including circularly arranged quantum dots (QDs), quantum rings (QRs), and quantum dot molecules (QDMs), are realized at the top edge of SMPs. Meanwhile, fourfold symmetric GeSi QDMs can be also obtained at the base edges of the SPMs. The promising features of self-assembled GeSi QNs are explained in terms of the surface chemical potential, which disclose the critical effect of surface morphology on the diffusion and the aggregation of Ge adatoms.
Multifunctional Silicon Optoelectronics Integrated with Plasmonic Scattering Color.
Wen, Long; Chen, Qin; Hu, Xin; Wang, Huacun; Jin, Lin; Su, Qiang
2016-12-27
Plasmonic scattering from metallic nanoparticles has been used for centuries to create the colorful appearance of stained glass. Besides their use as passive spectral filtering components, multifunctional optoelectronic applications can be achieved by integrating the nanoscatters with semiconductors that generate electricity using the complementary spectral components of plasmonic colors. To suppress the usual degradation of both efficiency and the gamut of plasmonic scattering coloration in highly asymmetric index configurations like a silicon host, aluminum nanodisks on indium tin oxide (ITO) coated silicon were experimentally studied and demonstrated color sorting in the full visible range along with photocurrent generation. Interestingly, the photocurrents were found to be comparable to the reference devices with only antireflection coatings in spite of the power loss for coloration. Detailed investigation shows that ITO serves as both the impedance matching layer for promoting the backward scattering and schottky contact with silicon, and moreover, plasmonic nanoscatters efficiently harvest the complement spectrum components for charge generation. The present approach combines the capacities of nanoscale color sorting and photoelectric converting at a negligible cost of efficiency, thus providing a broad flexibility of being utilized in various optoelectronic applications including self-powered display, filter-free imaging, and colorful photovoltaics.
Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew; ...
2016-02-12
Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS 2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects themore » range of key opto-electronic, structural, and morphological properties of monolayer MoS 2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO 2 substrates. Lastly, our demonstration provides a way of integrating MoS 2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.« less
Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities
Xia, Zhenyang; Song, Haomin; Kim, Munho; ...
2017-07-07
Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. Wemore » introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.« less
Tubbs, R. Shane; Page, Jeni; Chapman, Alexandra; Burgess, Brittni; Laws, Tyler; Warren, Haylie; Oskouian, Rod J
2016-01-01
The operative microscope has been a staple instrument in the neurosurgical operating room over the last 50 years. With advances in optoelectronics, options such as robotically controlled high magnification have become available. Such robotically controlled optoelectronic systems may offer new opportunities in surgical technique and teaching. However, traditionally trained surgeons may find it hard to accept newer technologies due to an inherent bias emerging from their previous background. We, therefore, studied how a medically naïve population in a pilot study would meet set microsurgical goals in a cadaver experiment using either a conventional operative microscope or BrightMatter™ Servo system, a robotically controlled optoelectronic system (Synaptive Medical, Toronto, Ontario, Canada). We found that the relative ease in teaching medical novices with a robotically controlled optoelectronic system was more valuable when compared to using a modern-day surgical microscope. PMID:26973804
1992-09-01
demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology...technology development stage, OETC will advance the development of optical components, produce links for a multiboard processor testbed demonstration, and...components that are affordable, initially at <$100 per line, and reliable, with a li~e BER-15 and MTTF >10 6 hours. Under the OETC program, Honeywell will
Transparent heat-spreader for optoelectronic applications
Minano, Juan Carlos; Benitez, Pablo
2014-11-04
An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.
DARPA Perspectives on Multifunctional Materials/Power and Energy
2012-08-09
In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed
Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films
Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; ...
2016-06-08
The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces themore » relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in V OC for the analyzed devices.« less
Piezophototronic Effect in Single-Atomic-Layer MoS2 for Strain-Gated Flexible Optoelectronics.
Wu, Wenzhuo; Wang, Lei; Yu, Ruomeng; Liu, Yuanyue; Wei, Su-Huai; Hone, James; Wang, Zhong Lin
2016-10-01
Strain-gated flexible optoelectronics are reported based on monolayer MoS 2 . Utilizing the piezoelectric polarization created at the metal-MoS 2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chang, C. Y., E-mail: cychang@gatech.edu; UMI 2958 Georgia Tech-CNRS, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz; Choi, Daeyoung
2016-05-09
A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.
Permanent magnet synchronous motor servo system control based on μC/OS
NASA Astrophysics Data System (ADS)
Shi, Chongyang; Chen, Kele; Chen, Xinglong
2015-10-01
When Opto-Electronic Tracking system operates in complex environments, every subsystem must operate efficiently and stably. As a important part of Opto-Electronic Tracking system, the performance of PMSM(Permanent Magnet Synchronous Motor) servo system affects the Opto-Electronic Tracking system's accuracy and speed greatly[1][2]. This paper applied embedded real-time operating system μC/OS to the control of PMSM servo system, implemented SVPWM(Space Vector Pulse Width Modulation) algorithm in PMSM servo system, optimized the stability of PMSM servo system. Pointing on the characteristics of the Opto-Electronic Tracking system, this paper expanded μC/OS with software redundancy processes, remote debugging and upgrading. As a result, the Opto- Electronic Tracking system performs efficiently and stably.
Field-programmable logic devices with optical input-output.
Szymanski, T H; Saint-Laurent, M; Tyan, V; Au, A; Supmonchai, B
2000-02-10
A field-programmable logic device (FPLD) with optical I/O is described. FPLD's with optical I/O can have their functionality specified in the field by means of downloading a control-bit stream and can be used in a wide range of applications, such as optical signal processing, optical image processing, and optical interconnects. Our device implements six state-of-the-art dynamically programmable logic arrays (PLA's) on a 2 mm x 2 mm die. The devices were fabricated through the Lucent Technologies-Advanced Research Projects Agency-Consortium for Optical and Optoelectronic Technologies in Computing (Lucent/ARPA/COOP) workshop by use of 0.5-microm complementary metal-oxide semiconductor-self-electro-optic device technology and were delivered in 1998. All devices are fully functional: The electronic data paths have been verified at 200 MHz, and optical tests are pending. The device has been programmed to implement a two-stage optical switching network with six 4 x 4 crossbar switches, which can realize more than 190 x 10(6) unique programmable input-output permutations. The same device scaled to a 2 cm x 2 cm substrate could support as many as 4000 optical I/O and 1 Tbit/s of optical I/O bandwidth and offer fully programmable digital functionality with approximately 110,000 programmable logic gates. The proposed optoelectronic FPLD is also ideally suited to realizing dense, statically reconfigurable crossbar switches. We describe an attractive application area for such devices: a rearrangeable three-stage optical switch for a wide-area-network backbone, switching 1000 traffic streams at the OC-48 data rate and supporting several terabits of traffic.
Mudanyali, Onur; Tseng, Derek; Oh, Chulwoo; Isikman, Serhan O; Sencan, Ikbal; Bishara, Waheb; Oztoprak, Cetin; Seo, Sungkyu; Khademhosseini, Bahar; Ozcan, Aydogan
2010-06-07
Despite the rapid progress in optical imaging, most of the advanced microscopy modalities still require complex and costly set-ups that unfortunately limit their use beyond well equipped laboratories. In the meantime, microscopy in resource-limited settings has requirements significantly different from those encountered in advanced laboratories, and such imaging devices should be cost-effective, compact, light-weight and appropriately accurate and simple to be usable by minimally trained personnel. Furthermore, these portable microscopes should ideally be digitally integrated as part of a telemedicine network that connects various mobile health-care providers to a central laboratory or hospital. Toward this end, here we demonstrate a lensless on-chip microscope weighing approximately 46 grams with dimensions smaller than 4.2 cm x 4.2 cm x 5.8 cm that achieves sub-cellular resolution over a large field of view of approximately 24 mm(2). This compact and light-weight microscope is based on digital in-line holography and does not need any lenses, bulky optical/mechanical components or coherent sources such as lasers. Instead, it utilizes a simple light-emitting-diode (LED) and a compact opto-electronic sensor-array to record lensless holograms of the objects, which then permits rapid digital reconstruction of regular transmission or differential interference contrast (DIC) images of the objects. Because this lensless incoherent holographic microscope has orders-of-magnitude improved light collection efficiency and is very robust to mechanical misalignments it may offer a cost-effective tool especially for telemedicine applications involving various global health problems in resource limited settings.
Phase-locked-loop-based delay-line-free picosecond electro-optic sampling system
NASA Astrophysics Data System (ADS)
Lin, Gong-Ru; Chang, Yung-Cheng
2003-04-01
A delay-line-free, high-speed electro-optic sampling (EOS) system is proposed by employing a delay-time-controlled ultrafast laser diode as the optical probe. Versatile optoelectronic delay-time controllers (ODTCs) based on modified voltage-controlled phase-locked-loop phase-shifting technologies are designed for the laser. The integration of the ODTC circuit and the pulsed laser diode has replaced the traditional optomechanical delay-line module used in the conventional EOS system. This design essentially prevents sampling distortion from misalignment of the probe beam, and overcomes the difficulty in sampling free-running high-speed transients. The maximum tuning range, error, scanning speed, tuning responsivity, and resolution of the ODTC are 3.9π (700°), <5% deviation, 25-2405 ns/s, 0.557 ps/mV, and ˜1 ps, respectively. Free-running wave forms from the analog, digital, and pulsed microwave signals are sampled and compared with those measured by the commercial apparatus.
64 x 64 thresholding photodetector array for optical pattern recognition
NASA Astrophysics Data System (ADS)
Langenbacher, Harry; Chao, Tien-Hsin; Shaw, Timothy; Yu, Jeffrey W.
1993-10-01
A high performance 32 X 32 peak detector array is introduced. This detector consists of a 32 X 32 array of thresholding photo-transistor cells, manufactured with a standard MOSIS digital 2-micron CMOS process. A built-in thresholding function that is able to perform 1024 thresholding operations in parallel strongly distinguishes this chip from available CCD detectors. This high speed detector offers responses from one to 10 milliseconds that is much higher than the commercially available CCD detectors operating at a TV frame rate. The parallel multiple peaks thresholding detection capability makes it particularly suitable for optical correlator and optoelectronically implemented neural networks. The principle of operation, circuit design and the performance characteristics are described. Experimental demonstration of correlation peak detection is also provided. Recently, we have also designed and built an advanced version of a 64 X 64 thresholding photodetector array chip. Experimental investigation of using this chip for pattern recognition is ongoing.
Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications
NASA Technical Reports Server (NTRS)
Fang, Wai-Chi; Sheu, Bing J.; Venus, Holger; Sandau, Rainer
1997-01-01
A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.
Optical authentication based on moiré effect of nonlinear gratings in phase space
NASA Astrophysics Data System (ADS)
Liao, Meihua; He, Wenqi; Wu, Jiachen; Lu, Dajiang; Liu, Xiaoli; Peng, Xiang
2015-12-01
An optical authentication scheme based on the moiré effect of nonlinear gratings in phase space is proposed. According to the phase function relationship of the moiré effect in phase space, an arbitrary authentication image can be encoded into two nonlinear gratings which serve as the authentication lock (AL) and the authentication key (AK). The AL is stored in the authentication system while the AK is assigned to the authorized user. The authentication procedure can be performed using an optoelectronic approach, while the design process is accomplished by a digital approach. Furthermore, this optical authentication scheme can be extended for multiple users with different security levels. The proposed scheme can not only verify the legality of a user identity, but can also discriminate and control the security levels of legal users. Theoretical analysis and simulation experiments are provided to verify the feasibility and effectiveness of the proposed scheme.
Project-oriented teaching model about specialized courses in the information age
NASA Astrophysics Data System (ADS)
Chen, Xiaodong; Wang, Jinjiang; Tian, Qingguo; Wang, Yi; Cai, Huaiyu
2017-08-01
Specialized courses play a significant role in the usage of basic knowledge in the practical application for engineering college students. The engineering data available has sharply increased since the beginning of the information age in the 20th century, providing much more approaches to study and practice. Therefore, how to guide students to make full use of resources for active engineering practice learning has become one of the key problems for specialized courses. This paper took the digital image processing course for opto-electronic information science and technology major as an example, discussed the teaching model of specialized course in the information age, put forward the "engineering resource oriented model", and fostered the ability of engineering students to use the basic knowledge to innovate and deal with specific project objectives. The fusion of engineering examples into practical training and teaching encourages students to practice independent engineering thinking.
Origami silicon optoelectronics for hemispherical electronic eye systems.
Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang
2017-11-24
Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.
Opto-electronic microwave oscillator
NASA Astrophysics Data System (ADS)
Yao, X. Steve; Maleki, Lute
1996-12-01
Photonic applications are important in RF communication systems to enhance many functions including remote transfer of antenna signals, carrier frequency up or down conversion, antenna beam steering, and signal filtering. Many of these functions require reference frequency oscillators. However, traditional microwave oscillators cannot meet all the requirements of photonic communication systems that need high frequency and low phase noise signal generation. Because photonic systems involve signals in both optical and electrical domains, an ideal signal source should be able to provide electrical and optical signals. In addition, it should be possible to synchronize or control the signal source by both electrical and optical means. We present such a source1-2 that converts continuous light energy into stable and spectrally pure microwave signals. This Opto-Electronic Oscillator, OEO, consists of a pump laser and a feedback circuit including an intensity modulator, an optical fiber delay line, a photodetector, an amplifier, and a filter, as shown in Figure 1a. Its oscillation frequency, limited only by the speed of the modulator, can be up to 75 GHz.
Hossain, Mozakkar; Kumar, Gundam Sandeep; Barimar Prabhava, S N; Sheerin, Emmet D; McCloskey, David; Acharya, Somobrata; Rao, K D M; Boland, John J
2018-05-22
Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.
Deltombe, T; Jamart, J; Recloux, S; Legrand, C; Vandenbroeck, N; Theys, S; Hanson, P
2007-03-01
We conducted a reliability comparison study to determine the intrarater and inter-rater reliability and the limits of agreement of the volume estimated by circumferential measurements using the frustum sign method and the disk model method, by water displacement volumetry, and by infrared optoelectronic volumetry in the assessment of upper limb lymphedema. Thirty women with lymphedema following axillary lymph node dissection surgery for breast cancer surgery were enrolled. In each patient, the volumes of the upper limbs were estimated by three physical therapists using circumference measurements, water displacement and optoelectronic volumetry. One of the physical therapists performed each measure twice. Intraclass correlation coefficients (ICCs), relative differences, and limits of agreement were determined. Intrarater and interrater reliability ICCs ranged from 0.94 to 1. Intrarater relative differences were 1.9% for the disk model method, 3.2% for the frustum sign model method, 2.9% for water displacement volumetry, and 1.5% for optoelectronic volumetry. Intrarater reliability was always better than interrater, except for the optoelectronic method. Intrarater and interrater limits of agreement were calculated for each technique. The disk model method and optoelectronic volumetry had better reliability than the frustum sign method and water displacement volumetry, which is usually considered to be the gold standard. In terms of low-cost, simplicity, and reliability, we recommend the disk model method as the method of choice in clinical practice. Since intrarater reliability was always better than interrater reliability (except for optoelectronic volumetry), patients should therefore, ideally, always be evaluated by the same therapist. Additionally, the limits of agreement must be taken into account when determining the response of a patient to treatment.
NASA Astrophysics Data System (ADS)
Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant
2014-11-01
While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04688a
NASA Astrophysics Data System (ADS)
Linde, Sivan; Shikler, Rafi
2013-10-01
There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation.
Optoelectronic instrumentation enhancement using data mining feedback for a 3D measurement system
NASA Astrophysics Data System (ADS)
Flores-Fuentes, Wendy; Sergiyenko, Oleg; Gonzalez-Navarro, Félix F.; Rivas-López, Moisés; Hernandez-Balbuena, Daniel; Rodríguez-Quiñonez, Julio C.; Tyrsa, Vera; Lindner, Lars
2016-12-01
3D measurement by a cyber-physical system based on optoelectronic scanning instrumentation has been enhanced by outliers and regression data mining feedback. The prototype has applications in (1) industrial manufacturing systems that include: robotic machinery, embedded vision, and motion control, (2) health care systems for measurement scanning, and (3) infrastructure by providing structural health monitoring. This paper presents new research performed in data processing of a 3D measurement vision sensing database. Outliers from multivariate data have been detected and removal to improve artificial intelligence regression algorithm results. Physical measurement error regression data has been used for 3D measurements error correction. Concluding, that the joint of physical phenomena, measurement and computation is an effectiveness action for feedback loops in the control of industrial, medical and civil tasks.
Opto-electronic characterization of third-generation solar cells
Jenatsch, Sandra
2018-01-01
Abstract We present an overview of opto-electronic characterization techniques for solar cells including light-induced charge extraction by linearly increasing voltage, impedance spectroscopy, transient photovoltage, charge extraction and more. Guidelines for the interpretation of experimental results are derived based on charge drift-diffusion simulations of solar cells with common performance limitations. It is investigated how nonidealities like charge injection barriers, traps and low mobilities among others manifest themselves in each of the studied cell characterization techniques. Moreover, comprehensive parameter extraction for an organic bulk-heterojunction solar cell comprising PCDTBT:PC70BM is demonstrated. The simulations reproduce measured results of 9 different experimental techniques. Parameter correlation is minimized due to the combination of various techniques. Thereby a route to comprehensive and accurate parameter extraction is identified. PMID:29707069
Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices
Raeis-Hosseini, Niloufar; Rho, Junsuk
2017-01-01
Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices. PMID:28878196
German-Chinese cooperative Bachelor in engineering physics/optoelectronics
NASA Astrophysics Data System (ADS)
Wick, Michael; Lindner, Gerhard; Zimmer, Katja; Zheng, Jihong; Xu, Boqing; Wang, Ning; Schreiner, Rupert; Fuhrmann, Thomas; Seebauer, Gudrun
2017-08-01
The University of Shanghai for Science and Technology (USST), the Coburg University of Applied Sciences and Arts (CUASA) and the OTH Regensburg, University of Applied Sciences (OTHR) established an English taught international cooperative bachelor program in the area of Engineering Physics/Optoelectronics. Students from China study their first four semesters at USST. They continue their studies in Germany for the last three semesters, including an internship and a bachelor thesis, graduating with a Chinese and a German bachelor degree. Students from Germany study their third and fourth semester at USST to gain international experience. While the first cohort of Chinese students is currently in Germany, the second cohort of German students is in Shanghai. Up to now the feedback regarding this study program is completely positive, thus it is planned to develop it further.
Coupled opto-electronic oscillator
NASA Technical Reports Server (NTRS)
Yao, X. Steve (Inventor); Maleki, Lute (Inventor)
1999-01-01
A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.
On-chip ultraviolet holography for high-throughput nanoparticle and biomolecule detection
NASA Astrophysics Data System (ADS)
Daloglu, Mustafa Ugur; Ray, Aniruddha; Gorocs, Zoltán.; Xiong, Matthew; Malik, Ravinder; Bitan, Gal; McLeod, Euan; Ozcan, Aydogan
2018-02-01
Nanoparticle and biomolecule imaging has become an important need for various applications. In an effort to find a higher throughput alternative to existing devices, we have designed a lensfree on-chip holographic imaging platform operating at an ultraviolet (UV) wavelength of 266 nm. With a custom-designed free-space light delivery system to illuminate the sample that is placed very close (<0.5 mm) to an opto-electronic image sensor chip, without any imaging lenses in between, the full active area of the imager chip (>16 mm2 ) was utilized as the imaging field-of-view (FOV) capturing holographic signatures of target objects on a chip. These holograms were then digitally back propagated to extract both the amplitude and phase information of the sample. The increased forward scattering from nanoparticles due to this shorter illumination wavelength has enabled us to image individual particles that are smaller than 30 nm over an FOV of >16 mm2 . Our platform was further utilized in high-contrast imaging of nanoscopic biomolecule aggregates since 266 nm illumination light is strongly absorbed by biomolecules including proteins and nucleic acids. Aggregates of Cu/Zn-superoxide dismutase (SOD1), which has been linked to a fatal neurodegenerative disease, ALS (amyotrophic lateral sclerosis), have been imaged with significantly improved contrast compared to imaging at visible wavelengths. This unique UV imaging modality could be valuable for biomedical applications (e.g., viral load measurements) and environmental monitoring including air and water quality monitoring.
Effectively Transparent Front Contacts for Optoelectronic Devices
Saive, Rebecca; Borsuk, Aleca M.; Emmer, Hal S.; ...
2016-06-10
Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq-1. These 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices. Optoelectronic devices such as light emitting diodes, photodiodes, and solar cells play an important and expanding role in modern technology. Photovoltaics is one of the largest optoelectronic industry sectors and an ever-increasing component of the world's rapidly growing renewable carbon-free electricity generation infrastructure. Inmore » recent years, the photovoltaics field has dramatically expanded owing to the large-scale manufacture of inexpensive crystalline Si and thin film cells and modules. The current record efficiency (η = 25.6%) Si solar cell utilizes a heterostructure intrinsic thin layer (HIT) design[1] to enable increased open circuit voltage, while more mass-manufacturable solar cell architectures feature front contacts.[2, 3] Thus improved solar cell front contact designs are important for future large-scale photovoltaics with even higher efficiency.« less
Optoelectronics technologies for Virtual Reality systems
NASA Astrophysics Data System (ADS)
Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław
2017-08-01
Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.
Bao, Wei; Borys, Nicholas J.; Ko, Changhyun; ...
2015-08-13
The ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices are two-dimensional monolayer transition metal dichalcogenide semiconductors. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. We use the ‘Campanile’ nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Moreover, synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected ~300-nm wide, energetically disorderedmore » edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. In conclusion, the nanoscale structure–property relationships established here are critical for the interpretation of edge- and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.« less
NASA Astrophysics Data System (ADS)
Coronel, Juan; Varón, Margarita; Rissons, Angélique
2016-09-01
The optical injection locking (OIL) technique is proposed to reduce the phase noise of a carrier generated for a vertical-cavity surface-emitting laser (VCSEL)-based optoelectronic oscillator. The OIL technique permits the enhancement of the VCSEL direct modulation bandwidth as well as the stabilization of the optical noise of the laser. A 2-km delay line, 10-GHz optical injection-locked VCSEL-based optoelectronic oscillator (OILVBO) was implemented. The internal noise sources of the optoelectronic oscillator components were characterized and analyzed to understand the noise conversion of the system into phase noise in the oscillator carrier. The implemented OILVBO phase noise was -105.7 dBc/Hz at 10 kHz from the carrier; this value agrees well with the performed simulated analysis. From the computed and measured phase noise curves, it is possible to infer the noise processes that take place inside the OILVBO. As a second measurement of the oscillation quality, a time-domain analysis was done through the Allan's standard deviation measurement, reported for first time for an optoelectronic oscillator using the OIL technique.
Small Molecule Organic Optoelectronic Devices
NASA Astrophysics Data System (ADS)
Bakken, Nathan
Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical, mechanical, and water uptake properties relevant to engineering the next generation of optoelectronic devices.
NASA Astrophysics Data System (ADS)
Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi
2014-01-01
In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.
A Fibre-Optic Communications Network for Teaching Clinical Medicine.
ERIC Educational Resources Information Center
Williams, Robin
1985-01-01
Describes an interactive television system based on fiber-optic communications technology which is used to facilitate participation by University of London medical students in lecture/tutorials by teachers in different hospital locations. Highlights include advantages of fiber-optics, cable manufacture and installation, opto-electronic interface,…
NASA Astrophysics Data System (ADS)
Krishnamoorthy, Ashok Venketaraman
This thesis covers the design, analysis, optimization, and implementation of optoelectronic (N,M,F) networks. (N,M,F) networks are generic space-division networks that are well suited to implementation using optoelectronic integrated circuits and free-space optical interconnects. An (N,M,F) networks consists of N input channels each having a fanout F_{rm o}, M output channels each having a fanin F_{rm i}, and Log_{rm K}(N/F) stages of K x K switches. The functionality of the fanout, switching, and fanin stages depends on the specific application. Three applications of optoelectronic (N,M,F) networks are considered. The first is an optoelectronic (N,1,1) content -addressable memory system that achieves associative recall on two-dimensional images retrieved from a parallel-access optical memory. The design and simulation of the associative memory are discussed, and an experimental emulation of a prototype system using images from a parallel-readout optical disk is presented. The system design provides superior performance to existing electronic content-addressable memory chips in terms of capacity and search rate, and uses readily available optical disk and VLSI technologies. Next, a scalable optoelectronic (N,M,F) neural network that uses free-space holographic optical interconnects is presented. The neural architecture minimizes the number of optical transmitters needed, and provides accurate electronic fanin with low signal skew, and dendritic-type fan-in processing capability in a compact layout. Optimal data-encoding methods and circuit techniques are discussed. The implementation of an prototype optoelectronic neural system, and its application to a simple recognition task is demonstrated. Finally, the design, analysis, and optimization of a (N,N,F) self-routing, packet-switched multistage interconnection network is described. The network is suitable for parallel computing and broadband switching applications. The tradeoff between optical and electronic interconnects is examined quantitatively by varying the electronic switch size K. The performance of the (N,N,F) network versus the fanning parameter F, is also analyzed. It is shown that the optoelectronic (N,N,F) networks provide a range of performance-cost alternatives, and offer superior performance-per-cost to fully electronic switching networks and to previous networks designs.
Optoelectronic pH Meter: Further Details
NASA Technical Reports Server (NTRS)
Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.
2009-01-01
A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.
Phase Transition Control for High Performance Ruddlesden-Popper Perovskite Solar Cells.
Zhang, Xu; Munir, Rahim; Xu, Zhuo; Liu, Yucheng; Tsai, Hsinhan; Nie, Wanyi; Li, Jianbo; Niu, Tianqi; Smilgies, Detlef-M; Kanatzidis, Mercouri G; Mohite, Aditya D; Zhao, Kui; Amassian, Aram; Liu, Shengzhong Frank
2018-05-01
Ruddlesden-Popper reduced-dimensional hybrid perovskite (RDP) semiconductors have attracted significant attention recently due to their promising stability and excellent optoelectronic properties. Here, the RDP crystallization mechanism in real time from liquid precursors to the solid film is investigated, and how the phase transition kinetics influences phase purity, quantum well orientation, and photovoltaic performance is revealed. An important template-induced nucleation and growth of the desired (BA) 2 (MA) 3 Pb 4 I 13 phase, which is achieved only via direct crystallization without formation of intermediate phases, is observed. As such, the thermodynamically preferred perpendicular crystal orientation and high phase purity are obtained. At low temperature, the formation of intermediate phases, including PbI 2 crystals and solvate complexes, slows down intercalation of ions and increases nucleation barrier, leading to formation of multiple RDP phases and orientation randomness. These insights enable to obtain high quality (BA) 2 (MA) 3 Pb 4 I 13 films with preferentially perpendicular quantum well orientation, high phase purity, smooth film surface, and improved optoelectronic properties. The resulting devices exhibit high power conversion efficiency of 12.17%. This work should help guide the perovskite community to better control Ruddlesden-Popper perovskite structure and further improve optoelectronic and solar cell devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.
Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun
2017-09-01
2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Optoelectronic properties of single-wall carbon nanotubes.
Nanot, Sébastien; Hároz, Erik H; Kim, Ji-Hee; Hauge, Robert H; Kono, Junichiro
2012-09-18
Single-wall carbon nanotubes (SWCNTs), with their uniquely simple crystal structures and chirality-dependent electronic and vibrational states, provide an ideal laboratory for the exploration of novel 1D physics, as well as quantum engineered architectures for applications in optoelectronics. This article provides an overview of recent progress in optical studies of SWCNTs. In particular, recent progress in post-growth separation methods allows different species of SWCNTs to be sorted out in bulk quantities according to their diameters, chiralities, and electronic types, enabling studies of (n,m)-dependent properties using standard macroscopic characterization measurements. Here, a review is presented of recent optical studies of samples enriched in 'armchair' (n = m) species, which are truly metallic nanotubes but show excitonic interband absorption. Furthermore, it is shown that intense ultrashort optical pulses can induce ultrafast bandgap oscillations in SWCNTs, via the generation of coherent phonons, which in turn modulate the transmission of a delayed probe pulse. Combined with pulse-shaping techniques, coherent phonon spectroscopy provides a powerful method for studying exciton-phonon coupling in SWCNTs in a chirality-selective manner. Finally, some of the basic properties of highly aligned SWCNT films are highlighted, which are particularly well-suited for optoelectronic applications including terahertz polarizers with nearly perfect extinction ratios and broadband photodetectors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Study on optoelectronic properties of Spiro-CN for developing an efficient OLED
NASA Astrophysics Data System (ADS)
Mishra, Ashok Kumar
2018-05-01
There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).
Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi
2016-04-01
Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.
The Optoelectronic Properties of Nanoparticles from First Principles Calculations
NASA Astrophysics Data System (ADS)
Brawand, Nicholas Peter
The tunable optoelectronic properties of nanoparticles through the modification of their size, shape, and surface chemistry, make them promising platforms for numerous applications, including electronic and solar conversion devices. However, the rational design and optimization of nanostructured materials remain open challenges, e.g. due to difficulties in controlling and reproducing synthetic processes and in precise atomic-scale characterization. Hence, the need for accurate theoretical predictions, which can complement and help interpret experiments and provide insight into the underlying physical properties of nanostructured materials. This dissertation focuses on the development and application of first principles calculations to predict the optoelectronic properties of nanoparticles. Novel methods based on density functional theory are developed, implemented, and applied to predict both optical and charge transport properties. In particular, the generalization of dielectric dependent hybrid functionals to finite systems is introduced and shown to yield highly accurate electronic structure properties of molecules and nanoparticles, including photoemission and absorption properties. In addition, an implementation of constrained density functional theory is discussed, for the calculation of hopping transport in nanoparticle systems. The implementation was verified against literature results and compared against other methods used to compute transport properties, showing that some methods used in the literature give unphysical results for thermally disordered systems. Furthermore, the constrained density functional theory implementation was coupled to the self-consistent image charge method, making it possible to include image charge effects self-consistently when predicting charge transport properties of nanoparticles near interfaces. The methods developed in this dissertation were then applied to study the optoelectronic and transport properties of specific systems, in particular, silicon and lead chalcogenide nanoparticles. In the case of Si, blinking in oxidized Si nanoparticles was addressed. Si dangling bonds at the surface were found to introduce defect states which, depending on their charge and local stress conditions, may give rise to ON and OFF states responsible for exponential blinking statistics. We also investigated, engineering of band edge positions of nanoparticles through post-synthetic surface chemistry modification, with a focus on lead chalcogenides. In collaboration with experiment, we demonstrated how band edge positions of lead sulfide nanoparticles can be tuned by over 2.0 eV. We established a clear relationship between ligand dipole moments and nanoparticle band edge shifts which can be used to engineer nanoparticles for optoelectronic applications. Calculations of transport properties focused on charge transfer in silicon and lead chalcogenide nanoparticles. Si nanoparticles with deep defects and shallow impurities were investigated, showing that shallow defects may be more detrimental to charge transport than previously assumed. In the case of lead chalcogenide nanoparticles, hydrogen was found to form complexes with defects which can be used to remove potentially detrimental charge traps in nanoparticle solids. The methods and results presented in this dissertation are expected to help guide engineering of nanoparticles for future device applications.
NASA Technical Reports Server (NTRS)
Morrison, Dennis R.
2005-01-01
The microparticle flow sensor (MFS) is a system for identifying and counting microscopic particles entrained in a flowing liquid. The MFS includes a transparent, optoelectronically instrumented laminar-flow chamber (see figure) and a computer for processing instrument-readout data. The MFS could be used to count microparticles (including micro-organisms) in diverse applications -- for example, production of microcapsules, treatment of wastewater, pumping of industrial chemicals, and identification of ownership of liquid products.
Optoelectronic Mounting Structure
Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.
2004-10-05
An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.
Botiz, Ioan; Stingelin, Natalie
2014-01-01
It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568
Chaotic dynamics and synchronization in microchip solid-state lasers with optoelectronic feedback.
Uchida, Atsushi; Mizumura, Keisuke; Yoshimori, Shigeru
2006-12-01
We experimentally observe the dynamics of a two-mode Nd:YVO4 microchip solid-state laser with optoelectronic feedback. The total laser output is detected and fed back to the injection current of the laser diode for pumping. Chaotic oscillations are observed in the microchip laser with optoelectronic self-feedback. We also observe the dynamics of two microchip lasers coupled mutually with optoelectronic link. The output of one laser is detected by a photodiode and the electronic signal converted from the laser output is sent to the pumping of the other laser. Chaotic fluctuation of the laser output is observed when the relaxation oscillation frequency is close to each other between the two microchip lasers. Synchronization of periodic wave form is also obtained when the microchip lasers have a single-longitudinal mode.
Zhang, Xingwang; Biekert, Nicolas; Choi, Shinhyuk; Naylor, Carl H; De-Eknamkul, Chawina; Huang, Wenzhuo; Zhang, Xiaojie; Zheng, Xiaorui; Wang, Dake; Johnson, A T Charlie; Cubukcu, Ertugrul
2018-02-14
Active tunability of photonic resonances is of great interest for various applications such as optical switching and modulation based on optoelectronic materials. Manipulation of charged excitons in atomically thin transition metal dichalcogenides (TMDCs) like monolayer MoS 2 offers an unexplored route for diverse functionalities in optoelectronic nanodevices. Here, we experimentally demonstrate the dynamic photochemical and optoelectronic control of the photonic crystal Fano resonances by optical and electrical tuning of monolayer MoS 2 refractive index via trions without any chemical treatment. The strong spatial and spectral overlap between the photonic Fano mode and the active MoS 2 monolayer enables efficient modulation of the Fano resonance. Our approach offers new directions for potential applications in the development of optical modulators based on emerging 2D direct band gap semiconductors.
Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff
1999-02-02
An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.
NASA Astrophysics Data System (ADS)
Dmitriev, Alex A.; Dmitriev, Alex S.; Makarov, Petr; Mikhailova, Inna
2018-04-01
In recent years, there has been a great interest in the development and creation of new functional energy mate-rials, including for improving the energy efficiency of power equipment and for effectively removing heat from energy devices, microelectronics and optoelectronics (power micro electronics, supercapacitors, cooling of processors, servers and data centers). In this paper, the technology of obtaining new nanocomposites based on mesoscopic microspheres, polymers and graphene flakes is considered. The methods of sequential production of functional materials from graphene flakes of different volumetric concentration using epoxy polymers, as well as the addition of monodisperse microspheres are described. Data are given on the measurement of the contact angle and thermal conductivity of these nanocomposites with respect to the creation of thermal interface materials for cooling devices of electronics, optoelectronics and power engineering.
TDC Array Tradeoffs in Current and Upcoming Digital SiPM Detectors for Time-of-Flight PET
NASA Astrophysics Data System (ADS)
Tétrault, Marc-André; Therrien, Audrey Corbeil; Lemaire, William; Fontaine, Réjean; Pratte, Jean-François
2017-03-01
Radiation detection used in positron emission tomography (PET) exploits the timing information to remove background noise and refine position measurement through time-of-flight information. Fine time resolution in the order of 10 ps full-width at half-maximum (FWHM) would not only improve contrast in the image, but would also enable direct image reconstruction without iterative or back-projected algorithms. Currently, PET experimental setups based on silicon photomultipliers (SiPMs) reach 73 ps FWHM, where the scintillation process plays the larger role in spreading the timing resolution. This will change with the optimization of faster light emission mechanisms (prompt photons), where readout optoelectronics will once more have a noticeable contribution to the timing resolution limit. In addition to reducing electronic jitter as much as possible, other aspects of the design space must also explored, especially for digital SiPMs. Unlike traditional SiPMs, digital SiPMs can integrate circuits like time-to-digital converters (TDCs) directly with individual or groups of light sensing cells. Designers should consider the number of TDCs to integrate, the area they occupy, their power consumption, their resolution, and the impact of signal processing algorithms and find a compromise with the figure of merit and the coincidence timing resolution (CTR). This paper presents a parametric simulation flow for digital SiPM microsystems that evaluates CTR based on these aspects and on the best linear unbiased estimator (BLUE) in order to guide their design for present and future PET systems. For a small 1.1 × 1.1 × 3.0 mm3 LYSO crystal, the simulations indicate that for a low jitter digital SiPM microsystem with 18.2% photon detection efficiency, fewer than four timestamps with any multi-TDC configuration scheme nearly obtain the optimal CTR with BLUE (just below 100 ps FWHM), but with limited 5% improvement over only using the first observed photon. On the other hand, if a similar crystal but with 2.5% prompt photon fraction is considered, BLUE provides an improvement between 80% and 200% (depending on electronic jitter) over using only the first observed photon. In this case, a few tens of timestamps are required, yielding very different design guidelines than for standard LYSO scintillators.
Opto-electronic oscillators having optical resonators
NASA Technical Reports Server (NTRS)
Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)
2003-01-01
Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.
Hybrid optoelectronic neural networks using a mutually pumped phase-conjugate mirror
NASA Astrophysics Data System (ADS)
Dunning, G. J.; Owechko, Y.; Soffer, B. H.
1991-06-01
A method is described for interconnecting hybrid optoelectronic neural networks by using a mutually pumped phase conjugate mirror (MP-PCM). In this method, cross talk due to Bragg degeneracies is greatly reduced by storing each weight among many spatially and angularly multiplexed gratings. The effective weight throughput is increased by the parallel updating of weights using outer-product learning. Experiments demonstrated a high degree of interconnectivity between adjacent pixels. A diagram is presented showing the architecture for the optoelectronic neural network using an MP-PCM.
Optoelectronic Infrastructure for Radio Frequency and Optical Phased Arrays
NASA Technical Reports Server (NTRS)
Cai, Jianhong
2015-01-01
Optoelectronic integrated circuits offer radiation-hardened solutions for satellite systems in addition to improved size, weight, power, and bandwidth characteristics. ODIS, Inc., has developed optoelectronic integrated circuit technology for sensing and data transfer in phased arrays. The technology applies integrated components (lasers, amplifiers, modulators, detectors, and optical waveguide switches) to a radio frequency (RF) array with true time delay for beamsteering. Optical beamsteering is achieved by controlling the current in a two-dimensional (2D) array. In this project, ODIS integrated key components to produce common RF-optical aperture operation.
Dual-scale topology optoelectronic processor.
Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H
1991-12-15
The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.
NASA Astrophysics Data System (ADS)
Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang
2017-08-01
This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific research laboratory as a platform to explore; (4) To create an out-campus expanded training environment of optoelectronic major practice and optoelectronic system teaching and training, with the major practice base as an expansion of the platform; (5) To break students' "pre-job training barriers" between school and work, with graduation design as the comprehensive training and testing link.
Laser Opto-Electronic Correlator for Robotic Vision Automated Pattern Recognition
NASA Technical Reports Server (NTRS)
Marzwell, Neville
1995-01-01
A compact laser opto-electronic correlator for pattern recognition has been designed, fabricated, and tested. Specifically it is a translation sensitivity adjustable compact optical correlator (TSACOC) utilizing convergent laser beams for the holographic filter. Its properties and performance, including the location of the correlation peak and the effects of lateral and longitudinal displacements for both filters and input images, are systematically analyzed based on the nonparaxial approximation for the reference beam. The theoretical analyses have been verified in experiments. In applying the TSACOC to important practical problems including fingerprint identification, we have found that the tolerance of the system to the input lateral displacement can be conveniently increased by changing a geometric factor of the system. The system can be compactly packaged using the miniature laser diode sources and can be used in space by the National Aeronautics and Space Administration (NASA) and ground commercial applications which include robotic vision, and industrial inspection of automated quality control operations. The personnel of Standard International will work closely with the Jet Propulsion Laboratory (JPL) to transfer the technology to the commercial market. Prototype systems will be fabricated to test the market and perfect the product. Large production will follow after successful results are achieved.
Optoelectronic Devices with Complex Failure Modes
NASA Technical Reports Server (NTRS)
Johnston, A.
2000-01-01
This part of the NSREC-2000 Short Course discusses radiation effects in basic photonic devices along with effects in more complex optoelectronic devices where the overall radiation response depends on several factors, with the possibility of multiple failure modes.
Opto-Electronic Oscillator and its Applications
NASA Technical Reports Server (NTRS)
Yao, X. S.; Maleki, L.
1996-01-01
We present the theoretical and experimental results of a new class of microwave oscillators called opto-electronic oscillators (OEO). We discuss techniques of achieving high stability single mode operation and demonstrate the applications of OEO in photonic communication systems.
Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant
2014-12-21
While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.
Method of fabricating an optoelectronic device having a bulk heterojunction
Shtein, Max [Ann Arbor, MI; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ
2008-10-14
A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.
Effect of doping of tin on optoelectronic properties of indium oxide: DFT study
NASA Astrophysics Data System (ADS)
Tripathi, Madhvendra Nath
2015-06-01
Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In32-xSnxO48+x/2; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.
ERIC Educational Resources Information Center
Choudhury, Sayeed; Hobbs, Benjamin; Lorie, Mark; Flores, Nicholas; Coleman, Anita; Martin, Mairead; Kuhlman, David L.; McNair, John H.; Rhodes, William A.; Tipton, Ron; Agnew, Grace; Nicholson, Dennis; Macgregor, George
2002-01-01
Includes four articles that address issues related to digital libraries. Highlights include a framework for evaluating digital library services, particularly academic research libraries; interdisciplinary approaches to education about digital libraries that includes library and information science and computing; digital rights management; and the…
Coskun, Ahmet F; Sencan, Ikbal; Su, Ting-Wei; Ozcan, Aydogan
2011-01-06
We demonstrate lensfree on-chip fluorescent imaging of transgenic Caenorhabditis elegans (C. elegans) over an ultra-wide field-of-view (FOV) of e.g., >2-8 cm(2) with a spatial resolution of ∼10 µm. This is the first time that a lensfree on-chip platform has successfully imaged fluorescent C. elegans samples. In our wide-field lensfree imaging platform, the transgenic samples are excited using a prism interface from the side, where the pump light is rejected through total internal reflection occurring at the bottom facet of the substrate. The emitted fluorescent signal from C. elegans samples is then recorded on a large area opto-electronic sensor-array over an FOV of e.g., >2-8 cm(2), without the use of any lenses, thin-film interference filters or mechanical scanners. Because fluorescent emission rapidly diverges, such lensfree fluorescent images recorded on a chip look blurred due to broad point-spread-function of our platform. To combat this resolution challenge, we use a compressive sampling algorithm to uniquely decode the recorded lensfree fluorescent patterns into higher resolution images, demonstrating ∼10 µm resolution. We tested the efficacy of this compressive decoding approach with different types of opto-electronic sensors to achieve a similar resolution level, independent of the imaging chip. We further demonstrate that this wide FOV lensfree fluorescent imaging platform can also perform sequential bright-field imaging of the same samples using partially-coherent lensfree digital in-line holography that is coupled from the top facet of the same prism used in fluorescent excitation. This unique combination permits ultra-wide field dual-mode imaging of C. elegans on a chip which could especially provide a useful tool for high-throughput screening applications in biomedical research.
Ozcan, Aydogan
2011-01-01
We demonstrate lensfree on-chip fluorescent imaging of transgenic Caenorhabditis elegans (C. elegans) over an ultra-wide field-of-view (FOV) of e.g., >2–8 cm2 with a spatial resolution of ∼10µm. This is the first time that a lensfree on-chip platform has successfully imaged fluorescent C. elegans samples. In our wide-field lensfree imaging platform, the transgenic samples are excited using a prism interface from the side, where the pump light is rejected through total internal reflection occurring at the bottom facet of the substrate. The emitted fluorescent signal from C. elegans samples is then recorded on a large area opto-electronic sensor-array over an FOV of e.g., >2–8 cm2, without the use of any lenses, thin-film interference filters or mechanical scanners. Because fluorescent emission rapidly diverges, such lensfree fluorescent images recorded on a chip look blurred due to broad point-spread-function of our platform. To combat this resolution challenge, we use a compressive sampling algorithm to uniquely decode the recorded lensfree fluorescent patterns into higher resolution images, demonstrating ∼10 µm resolution. We tested the efficacy of this compressive decoding approach with different types of opto-electronic sensors to achieve a similar resolution level, independent of the imaging chip. We further demonstrate that this wide FOV lensfree fluorescent imaging platform can also perform sequential bright-field imaging of the same samples using partially-coherent lensfree digital in-line holography that is coupled from the top facet of the same prism used in fluorescent excitation. This unique combination permits ultra-wide field dual-mode imaging of C. elegans on a chip which could especially provide a useful tool for high-throughput screening applications in biomedical research. PMID:21253611
NASA Astrophysics Data System (ADS)
Yao, Guang-tao; Zhang, Xiao-hui; Ge, Wei-long
2012-01-01
The underwater laser imaging detection is an effective method of detecting short distance target underwater as an important complement of sonar detection. With the development of underwater laser imaging technology and underwater vehicle technology, the underwater automatic target identification has gotten more and more attention, and is a research difficulty in the area of underwater optical imaging information processing. Today, underwater automatic target identification based on optical imaging is usually realized with the method of digital circuit software programming. The algorithm realization and control of this method is very flexible. However, the optical imaging information is 2D image even 3D image, the amount of imaging processing information is abundant, so the electronic hardware with pure digital algorithm will need long identification time and is hard to meet the demands of real-time identification. If adopt computer parallel processing, the identification speed can be improved, but it will increase complexity, size and power consumption. This paper attempts to apply optical correlation identification technology to realize underwater automatic target identification. The optics correlation identification technology utilizes the Fourier transform characteristic of Fourier lens which can accomplish Fourier transform of image information in the level of nanosecond, and optical space interconnection calculation has the features of parallel, high speed, large capacity and high resolution, combines the flexibility of calculation and control of digital circuit method to realize optoelectronic hybrid identification mode. We reduce theoretical formulation of correlation identification and analyze the principle of optical correlation identification, and write MATLAB simulation program. We adopt single frame image obtained in underwater range gating laser imaging to identify, and through identifying and locating the different positions of target, we can improve the speed and orientation efficiency of target identification effectively, and validate the feasibility of this method primarily.
Comparison between analog and digital neural network implementations for range-finding applications.
Gatet, Laurent; Tap-Béteille, Hélène; Bony, Francis
2009-03-01
A neural network (NN) was developed in order to increase the distance range of a phase-shift laser range finder and to achieve surface recognition, by using two photoelectrical signals issued from the measurement system. The NN architecture consists of a multilayer perceptron (MLP) with two inputs, three neurons in the hidden layer, and one output. Depending on the application, the NN output has to resolve the ambiguity due to phase-shift measurement by linearizing the inverse of the square law, or to indicate an output voltage corresponding to the tested surface. This embedded system dedicated to optoelectronic measurements was successfully tested with an analog NN, implemented in 0.35- microm complimentary metal-oxide-semiconductor (CMOS) technology, resulting in a threefold increase in the distance range with respect to the one limited by the phase-shift measurement, and by discriminating four types of surfaces (a plastic surface, glossy paper, a painted wall, and a porous surface), at a remote distance between the range finder and the target varying from 0.5 m up to 1.25 m and with a laser beam angle varying between -pi/6 and pi/6 with respect to the target. In this type of application, NN analog implementation provides many advantages, notably use of a small silicon area, low power consumption and no analog-to-digital conversions (ADCs). Nevertheless, digital implementation allows ease of conception and reconfigurability and an embedded weight and bias update. This paper presents the complete measurement system and a comparison between both types of implementation, by developing the advantages and drawbacks relative to each method. An optimized mixed architecture, using both techniques, is then proposed and discussed at the end of the paper.
2010-06-01
addition, a new class of donor molecules was invented in the course of the DRI program. 2.1 Polymer Based Donor-acceptor Material The following work by...average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data...information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information
EDFA-based coupled opto-electronic oscillator and its phase noise
NASA Technical Reports Server (NTRS)
Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute
2004-01-01
EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.
Research on hyperspectral dynamic scene and image sequence simulation
NASA Astrophysics Data System (ADS)
Sun, Dandan; Liu, Fang; Gao, Jiaobo; Sun, Kefeng; Hu, Yu; Li, Yu; Xie, Junhu; Zhang, Lei
2016-10-01
This paper presents a simulation method of hyperspectral dynamic scene and image sequence for hyperspectral equipment evaluation and target detection algorithm. Because of high spectral resolution, strong band continuity, anti-interference and other advantages, in recent years, hyperspectral imaging technology has been rapidly developed and is widely used in many areas such as optoelectronic target detection, military defense and remote sensing systems. Digital imaging simulation, as a crucial part of hardware in loop simulation, can be applied to testing and evaluation hyperspectral imaging equipment with lower development cost and shorter development period. Meanwhile, visual simulation can produce a lot of original image data under various conditions for hyperspectral image feature extraction and classification algorithm. Based on radiation physic model and material characteristic parameters this paper proposes a generation method of digital scene. By building multiple sensor models under different bands and different bandwidths, hyperspectral scenes in visible, MWIR, LWIR band, with spectral resolution 0.01μm, 0.05μm and 0.1μm have been simulated in this paper. The final dynamic scenes have high real-time and realistic, with frequency up to 100 HZ. By means of saving all the scene gray data in the same viewpoint image sequence is obtained. The analysis results show whether in the infrared band or the visible band, the grayscale variations of simulated hyperspectral images are consistent with the theoretical analysis results.
Feng, Yongqiang; Max, Ludo
2014-01-01
Purpose Studying normal or disordered motor control requires accurate motion tracking of the effectors (e.g., orofacial structures). The cost of electromagnetic, optoelectronic, and ultrasound systems is prohibitive for many laboratories, and limits clinical applications. For external movements (lips, jaw), video-based systems may be a viable alternative, provided that they offer high temporal resolution and sub-millimeter accuracy. Method We examined the accuracy and precision of 2D and 3D data recorded with a system that combines consumer-grade digital cameras capturing 60, 120, or 240 frames per second (fps), retro-reflective markers, commercially-available computer software (APAS, Ariel Dynamics), and a custom calibration device. Results Overall mean error (RMSE) across tests was 0.15 mm for static tracking and 0.26 mm for dynamic tracking, with corresponding precision (SD) values of 0.11 and 0.19 mm, respectively. The effect of frame rate varied across conditions, but, generally, accuracy was reduced at 240 fps. The effect of marker size (3 vs. 6 mm diameter) was negligible at all frame rates for both 2D and 3D data. Conclusion Motion tracking with consumer-grade digital cameras and the APAS software can achieve sub-millimeter accuracy at frame rates that are appropriate for kinematic analyses of lip/jaw movements for both research and clinical purposes. PMID:24686484
Emissive polymeric materials for optoelectronic devices
Shiang, Joseph John [Niskayuna, NY; Chichak, Kelly Scott [Clifton Park, NY; Cella, James Anthony [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Janora, Kevin Henry [Schenectady, NY
2011-07-05
Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.
Atom Probe Tomography Analysis of Gallium-Nitride-Based Light-Emitting Diodes
NASA Astrophysics Data System (ADS)
Prosa, Ty J.; Olson, David; Giddings, A. Devin; Clifton, Peter H.; Larson, David J.; Lefebvre, Williams
2014-03-01
Thin-film light-emitting diodes (LEDs) composed of GaN/InxGa1-xN/GaN quantum well (QW) structures are integrated into modern optoelectronic devices because of the tunable InGaN band-gap enabling emission of the full visible spectrum. Atom probe tomography (APT) offers unique capabilities for 3D device characterization including compositional mapping of nano-volumes (>106 nm3) , high detection efficiency (>50%), and good sensitivity. In this study, APT is used to understand the distribution of dopants as well as Al and In alloying agents in a GaN device. Measurements using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have also been made to improve the accuracy of the APT analysis by correlating the information content of these complimentary techniques. APT analysis reveals various QW and other optoelectronic structures including a Mg p-GaN layer, an Al-rich electron blocking layer, an In-rich multi-QW region, and an In-based super-lattice structure. The multi-QW composition shows good quantitative agreement with layer thickness and spacing extracted from a high resolution TEM image intensity analysis.
NASA Astrophysics Data System (ADS)
Petrochenko, Andrew V.; Konyakhin, Igor A.
2015-06-01
Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1,2,3,4]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.
Magnetic and optoelectronic properties of gold nanocluster-thiophene assembly.
Qin, Wei; Lohrman, Jessica; Ren, Shenqiang
2014-07-07
Nanohybrids consisting of Au nanocluster and polythiophene nanowire assemblies exhibit unique thermal-responsive optical behaviors and charge-transfer controlled magnetic and optoelectronic properties. The ultrasmall Au nanocluster enhanced photoabsorption and conductivity effectively improves the photocurrent of nanohybrid based photovoltaics, leading to an increase of power conversion efficiency by 14 % under AM 1.5 illumination. In addition, nanohybrids exhibit electric field controlled spin resonance and magnetic field sensing behaviors, which open up the potential of charge-transfer complex system where the magnetism and optoelectronics interact. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Power-efficient dual-rate optical transceiver.
Zuo, Yongrong; Kiamiley, Fouad E; Wang, Xiaoqing; Gui, Ping; Ekman, Jeremy; Wang, Xingle; McFadden, Michael J; Haney, Michael W
2005-11-20
A dual-rate (2 Gbit/s and 100 Mbit/s) optical transceiver designed for power-efficient connections within and between modern high-speed digital systems is described. The transceiver can dynamically adjust its data rate according to performance requirements, allowing for power-on-demand operation. Dynamic power management permits energy saving and lowers device operating temperatures, improving the reliability and lifetime of optoelectronic-devices such as vertical-cavity surface-emitting lasers (VCSELs). To implement dual-rate functionality, we include in the transmitter and receiver circuits separate high-speed and low-power data path modules. The high-speed module is designed for gigabit operation to achieve high bandwidth. A simpler low-power module is designed for megabit data transmission with low power consumption. The transceiver is fabricated in a 0.5 microm silicon-on-sapphire complementary metal-oxide semiconductor. The VCSEL and photodetector devices are attached to the transceiver's integrated circuit by flip-chip bonding. A free-space optical link system is constructed to demonstrate correct dual-rate functionality. Experimental results show reliable link operation at 2 Gbit/s and 100 Mbit/s data transfer rates with approximately 104 and approximately 9 mW power consumption, respectively. The transceiver's switching time between these two data rates is demonstrated as 10 micros, which is limited by on-chip register reconfiguration time. Improvement of this switching time can be obtained by use of dedicated input-output pads for dual-rate control signals.
All-dielectric resonant cavity-enabled metals with broadband optical transparency
NASA Astrophysics Data System (ADS)
Liu, Zhengqi; Zhang, Houjiao; Liu, Xiaoshan; Pan, Pingping; Liu, Yi; Tang, Li; Liu, Guiqiang
2017-06-01
Metal films with broadband optical transparency are desirable in many optoelectronic devices, such as displays, smart windows, light-emitting diodes and infrared detectors. As bare metal is opaque to light, this issue of transparency attracts great scientific interest. In this work, we proposed and demonstrated a feasible and universal approach for achieving broadband optical transparent (BOT) metals by utilizing all-dielectric resonant cavities. Resonant dielectrics provide optical cavity modes and couple strongly with the surface plasmons of the metal film, and therefore produce a broadband near-unity optical transparent window. The relative enhancement factor (EF) of light transmission exceeds 3400% in comparison with that of pure metal film. Moreover, the transparent metal motif can be realized by other common metals including gold (Au), silver (Ag) and copper (Cu). These optical features together with the fully retained electric and mechanical properties of a natural metal suggest that it will have wide applications in optoelectronic devices.
Metal oxides for optoelectronic applications.
Yu, Xinge; Marks, Tobin J; Facchetti, Antonio
2016-04-01
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
Metal oxides for optoelectronic applications
NASA Astrophysics Data System (ADS)
Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio
2016-04-01
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
The hybrid photonic planar integrated receiver with a polymer optical waveguide
NASA Astrophysics Data System (ADS)
Busek, Karel; Jerábek, Vitezslav; Armas Arciniega, Julio; Prajzler, Václav
2008-11-01
This article describes design of the photonic receiver composed of the system polymer planar waveguides, InGaAs p-i-n photodiode and integrated HBT amplifier on a low loss composite substrate. The photonic receiver was the main part of the hybrid integrated microwave optoelectronic transceiver TRx (transciever TRx) for the optical networks PON (passive optical networks) with FTTH (fiber-to-the-home) topology. In this article are presented the research results of threedimensional field between output facet of a optical waveguide and p-i-n photodiode. In terms of our research, there was optimized the optical coupling among the facet waveguide and pi-n photodiode and the electrical coupling among p-i-n photodiode and input of HBT amplifier. The hybrid planar lightwave circuit (PLC) of the transceiver TRx will be composed from a two parts - polymer optical waveguide including VHGT filter section and a optoelectronic microwave section.
Transparent conductive coatings
NASA Technical Reports Server (NTRS)
Ashok, S.
1983-01-01
Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.
Photonics Applications and Web Engineering: WILGA 2017
NASA Astrophysics Data System (ADS)
Romaniuk, Ryszard S.
2017-08-01
XLth Wilga Summer 2017 Symposium on Photonics Applications and Web Engineering was held on 28 May-4 June 2017. The Symposium gathered over 350 participants, mainly young researchers active in optics, optoelectronics, photonics, modern optics, mechatronics, applied physics, electronics technologies and applications. There were presented around 300 oral and poster papers in a few main topical tracks, which are traditional for Wilga, including: bio-photonics, optical sensory networks, photonics-electronics-mechatronics co-design and integration, large functional system design and maintenance, Internet of Things, measurement systems for astronomy, high energy physics experiments, and other. The paper is a traditional introduction to the 2017 WILGA Summer Symposium Proceedings, and digests some of the Symposium chosen key presentations. This year Symposium was divided to the following topical sessions/conferences: Optics, Optoelectronics and Photonics, Computational and Artificial Intelligence, Biomedical Applications, Astronomical and High Energy Physics Experiments Applications, Material Research and Engineering, and Advanced Photonics and Electronics Applications in Research and Industry.
Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.
Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J
2018-06-11
Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.
Advanced Opto-Electronics (LIDAR and Microsensor Development)
NASA Technical Reports Server (NTRS)
Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.
2005-01-01
Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.
One-Dimensional Nanostructures and Devices of II–V Group Semiconductors
2009-01-01
The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452
Organic photosensitive cells grown on rough electrode with nano-scale morphology control
Yang, Fan [Piscataway, NJ; Forrest, Stephen R [Ann Arbor, MI
2011-06-07
An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.
Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.
1999-02-02
An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.
Fiber optic oxygen sensor leak detection system for space applications
NASA Astrophysics Data System (ADS)
Kazemi, Alex A.; Goswami, Kish; Mendoza, Edgar A.; Kempen, Lothar U.
2007-09-01
This paper describes the successful test of a multi-point fiber optic oxygen sensor system during the static firing of an Evolved Expandable Launch Vehicle (EELV)/Delta IV common booster core (CBC) rocket engine at NASA's Stennis Flight Center. The system consisted of microsensors (optrodes) using an oxygen gas sensitive indicator incorporated onto an optically transparent porous substrate. The modular optoelectronics and multiplexing network system was designed and assembled utilizing a multi-channel opto-electronic sensor readout unit that monitored the oxygen and temperature response of the individual optrodes in real-time and communicated this information via a serial communication port to a remote laptop computer. The sensor packaging for oxygen consisted of two optrodes - one doped with an indicator sensitive to oxygen, and the other doped with an indicator sensitive to temperature. The multichannel oxygen sensor system is fully reversible. It has demonstrated a dynamic response to oxygen gas in the range of 0% to 100% with 0.1% resolution and a response time of <=10 seconds. The sensor package was attached to a custom fiber optic ribbon cable, which was then connected to a fiber optic trunk communications cable (standard telecommunications-grade fiber) that connected to the optoelectronics module. Each board in the expandable module included light sources, photo-detectors, and associated electronics required for detecting oxygen and temperature. The paper illustrates the sensor design and performance data under field deployment conditions.
NASA Astrophysics Data System (ADS)
Wang, Zhihuan; Nabet, Bahram
2015-12-01
Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.
Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong
2016-01-01
Recently, organic–inorganic halide perovskites have sparked tremendous research interest because of their ground‐breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light‐emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high‐quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three‐dimensional large sized single crystals, two‐dimensional nanoplates, one‐dimensional nanowires, to zero‐dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high‐performance (opto)electronic devices. PMID:27812463
Perumal, Packiyaraj; Karuppiah, Chelladurai; Liao, Wei-Cheng; Liou, Yi-Rou; Liao, Yu-Ming; Chen, Yang-Fang
2017-08-30
Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO 2 /n-MoS 2 /Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW -1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 10 10 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS 2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.
Optoelectronic Integrated Circuits For Neural Networks
NASA Technical Reports Server (NTRS)
Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.
1990-01-01
Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.
Video Guidance Sensors Using Remotely Activated Targets
NASA Technical Reports Server (NTRS)
Bryan, Thomas C.; Howard, Richard T.; Book, Michael L.
2004-01-01
Four updated video guidance sensor (VGS) systems have been proposed. As described in a previous NASA Tech Briefs article, a VGS system is an optoelectronic system that provides guidance for automated docking of two vehicles. The VGS provides relative position and attitude (6-DOF) information between the VGS and its target. In the original intended application, the two vehicles would be spacecraft, but the basic principles of design and operation of the system are applicable to aircraft, robots, objects maneuvered by cranes, or other objects that may be required to be aligned and brought together automatically or under remote control. In the first two of the four VGS systems as now proposed, the tracked vehicle would include active targets that would light up on command from the tracking vehicle, and a video camera on the tracking vehicle would be synchronized with, and would acquire images of, the active targets. The video camera would also acquire background images during the periods between target illuminations. The images would be digitized and the background images would be subtracted from the illuminated-target images. Then the position and orientation of the tracked vehicle relative to the tracking vehicle would be computed from the known geometric relationships among the positions of the targets in the image, the positions of the targets relative to each other and to the rest of the tracked vehicle, and the position and orientation of the video camera relative to the rest of the tracking vehicle. The major difference between the first two proposed systems and prior active-target VGS systems lies in the techniques for synchronizing the flashing of the active targets with the digitization and processing of image data. In the prior active-target VGS systems, synchronization was effected, variously, by use of either a wire connection or the Global Positioning System (GPS). In three of the proposed VGS systems, the synchronizing signal would be generated on, and transmitted from, the tracking vehicle. In the first proposed VGS system, the tracking vehicle would transmit a pulse of light. Upon reception of the pulse, circuitry on the tracked vehicle would activate the target lights. During the pulse, the target image acquired by the camera would be digitized. When the pulse was turned off, the target lights would be turned off and the background video image would be digitized. The second proposed system would function similarly to the first proposed system, except that the transmitted synchronizing signal would be a radio pulse instead of a light pulse. In this system, the signal receptor would be a rectifying antenna. If the signal contained sufficient power, the output of the rectifying antenna could be used to activate the target lights, making it unnecessary to include a battery or other power supply for the targets on the tracked vehicle.
Inverted organic photosensitive devices
Forrest, Stephen R.; Bailey-Salzman, Rhonda F.
2016-12-06
The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.
NASA Astrophysics Data System (ADS)
Qu, Zhou; Xing, Hao; Wang, Dawei; Wang, Qiugui
2015-10-01
High-energy Laser weapon is a new-style which is developing rapidly nowadays. It is a one kind of direction energy weapon which can destroy the targets or make them invalid. High-energy Laser weapon has many merits such as concentrated energy, fast transmission, long operating range, satisfied precision, fast shift fire, anti-electromagnetic interference, reusability, cost-effectiveness. High-energy Laser weapon has huge potential for modern warfare since its laser beam launch attack to the target by the speed of light. High-energy Laser weapon can be deployed by multiple methods such as skyborne, carrier borne, vehicle-mounted, foundation, space platform. Besides the connection with command and control system, High-energy Laser weapon is consist of high-energy laser and beam steering. Beam steering is comprised of Large diameter launch system and Precision targeting systems. Meanwhile, beam steering includes the distance measurement of target location, detection system of television and infrared sensor, adaptive optical system of Laser atmospheric distortion correction. The development of laser technology is very fast in recent years. A variety of laser sources have been regarded as the key component in many optoelectronic devices. For directed energy weapon, the progress of laser technology has greatly improved the tactical effectiveness, such as increasing the range and strike precision. At the same time, the modern solid-state laser has become the ideal optical source for optical countermeasure, because it has high photoelectric conversion efficiency and small volume or weight. However, the total performance is limited by the mutual cooperation between different subsystems. The optical countermeasure is a complex technique after many years development. The key factor to evaluate the laser weapon can be formulated as laser energy density to target. This article elaborated the laser device technology of optoelectronic countermeasure and Photoelectric tracking technology. Also the allocation of optoelectronic countermeasure was discussed in this article. At last, this article prospected the future development of high-energy laser.
Optoelectronic lessons as an interdisciplinary lecture
NASA Astrophysics Data System (ADS)
Wu, Dan; Wu, Maocheng; Gu, Jihua
2017-08-01
It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.
NASA Astrophysics Data System (ADS)
Yue, Fengfa; Li, Xingfei; Chen, Cheng; Tan, Wenbin
2017-12-01
In order to improve the control accuracy and stability of opto-electronic tracking system fixed on reef or airport under friction and external disturbance conditions, adaptive integral backstepping sliding mode control approach with friction compensation is developed to achieve accurate and stable tracking for fast moving target. The nonlinear observer and slide mode controller based on modified LuGre model with friction compensation can effectively reduce the influence of nonlinear friction and disturbance of this servo system. The stability of the closed-loop system is guaranteed by Lyapunov theory. The steady-state error of the system is eliminated by integral action. The adaptive integral backstepping sliding mode controller and its performance are validated by a nonlinear modified LuGre dynamic model of the opto-electronic tracking system in simulation and practical experiments. The experiment results demonstrate that the proposed controller can effectively realise the accuracy and stability control of opto-electronic tracking system.
Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan
2015-05-27
Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.
Cultivation of students' engineering designing ability based on optoelectronic system course project
NASA Astrophysics Data System (ADS)
Cao, Danhua; Wu, Yubin; Li, Jingping
2017-08-01
We carry out teaching based on optoelectronic related course group, aiming at junior students majored in Optoelectronic Information Science and Engineering. " Optoelectronic System Course Project " is product-designing-oriented and lasts for a whole semester. It provides a chance for students to experience the whole process of product designing, and improve their abilities to search literature, proof schemes, design and implement their schemes. In teaching process, each project topic is carefully selected and repeatedly refined to guarantee the projects with the knowledge integrity, engineering meanings and enjoyment. Moreover, we set up a top team with professional and experienced teachers, and build up learning community. Meanwhile, the communication between students and teachers as well as the interaction among students are taken seriously in order to improve their team-work ability and communicational skills. Therefore, students are not only able to have a chance to review the knowledge hierarchy of optics, electronics, and computer sciences, but also are able to improve their engineering mindset and innovation consciousness.
Optoelectronic properties of valence-state-controlled amorphous niobium oxide
NASA Astrophysics Data System (ADS)
Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi
2016-06-01
In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+ to 4+ by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.
Effect of doping of tin on optoelectronic properties of indium oxide: DFT study
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tripathi, Madhvendra Nath, E-mail: ommadhav27@gmail.com
2015-06-24
Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom ofmore » conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.« less
Optoelectronically probing the density of nanowire surface trap states to the single state limit
NASA Astrophysics Data System (ADS)
Dan, Yaping
2015-02-01
Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.
NASA Astrophysics Data System (ADS)
Yang, Hae In; Park, Seonyoung; Choi, Woong
2018-06-01
We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.
Web-Enabled Optoelectronic Particle-Fallout Monitor
NASA Technical Reports Server (NTRS)
Lineberger, Lewis P.
2008-01-01
A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.
The ship-borne infrared searching and tracking system based on the inertial platform
NASA Astrophysics Data System (ADS)
Li, Yan; Zhang, Haibo
2011-08-01
As a result of the radar system got interferenced or in the state of half silent ,it can cause the guided precision drop badly In the modern electronic warfare, therefore it can lead to the equipment depended on electronic guidance cannot strike the incoming goals exactly. It will need to rely on optoelectronic devices to make up for its shortcomings, but when interference is in the process of radar leading ,especially the electro-optical equipment is influenced by the roll, pitch and yaw rotation ,it can affect the target appear outside of the field of optoelectronic devices for a long time, so the infrared optoelectronic equipment can not exert the superiority, and also it cannot get across weapon-control system "reverse bring" missile against incoming goals. So the conventional ship-borne infrared system unable to track the target of incoming quickly , the ability of optoelectronic rivalry declines heavily.Here we provide a brand new controlling algorithm for the semi-automatic searching and infrared tracking based on inertial navigation platform. Now it is applying well in our XX infrared optoelectronic searching and tracking system. The algorithm is mainly divided into two steps: The artificial mode turns into auto-searching when the deviation of guide exceeds the current scene under the course of leading for radar.When the threshold value of the image picked-up is satisfied by the contrast of the target in the searching scene, the speed computed by using the CA model Least Square Method feeds back to the speed loop. And then combine the infrared information to accomplish the closed-loop control of the infrared optoelectronic system tracking. The algorithm is verified via experiment. Target capturing distance is 22.3 kilometers on the great lead deviation by using the algorithm. But without using the algorithm the capturing distance declines 12 kilometers. The algorithm advances the ability of infrared optoelectronic rivalry and declines the target capturing time by using semi-automatic searching and reliable capturing-tracking, when the lead deviation of the radar is great.
Releasable High-Mechanical-Advantage Linear Actuator
NASA Technical Reports Server (NTRS)
Young, Gordon H.
1994-01-01
Proposed linear actuator includes ball-screw mechanism made to engage or disengage piston as needed. Requires low power to maintain release and no power to maintain engagement. Pins sliding radially in solenoids in yoke engage or disengage slot in piston. With help of optoelectronic feedback, yoke made to follow free piston during disengagement so always in position to "grab" piston.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jain, Abhilasha, E-mail: abhilasha.vnit@gmail.com; Kumar, Ashwini; Peshwe, D. R.
Rare earth activated hybrid phosphors have made significant progress in terms of better light output, color properties and potential for long life. All these features coupled with low cost production and reduced maintenance have offered phosphor converted LEDs for diverse optoelectronic applications including signal lighting in advanced aviation. The present paper explores the effect of various processing parameters on luminescent hybrid phosphors fabricated through combustion synthesis.
An Optoelectronics Research Center
2006-03-08
compared with a -2 mm wide slab, -200 nrn thick silicon (SOl) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and...acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The electron mobility in the...application areas including: nanoscale epitaxial growth for semiconductor heterostructures; nanofluidics for biological separations; nanomagnetics for
NASA Astrophysics Data System (ADS)
Arestova, M. L.; Bykovskii, A. Yu
1995-10-01
An architecture is proposed for a specialised optoelectronic multivalued logic processor based on the Allen—Givone algebra. The processor is intended for multiparametric processing of data arriving from a large number of sensors or for tackling spectral analysis tasks. The processor architecture makes it possible to obtain an approximate general estimate of the state of an object being diagnosed on a p-level scale. Optoelectronic systems are proposed for MAXIMUM, MINIMUM, and LITERAL logic gates, based on optical-frequency encoding of logic levels. Corresponding logic gates form a complete set of logic functions in the Allen—Givone algebra.
OPTICAL PROCESSING OF INFORMATION: Multistage optoelectronic two-dimensional image switches
NASA Astrophysics Data System (ADS)
Fedorov, V. B.
1994-06-01
The implementation principles and the feasibility of construction of high-throughput multistage optoelectronic switches, capable of transmitting data in the form of two-dimensional images along interconnected pairs of optical channels, are considered. Different ways of realising compact switches are proposed. They are based on the use of polarisation-sensitive elements, arrays of modulators of the plane of polarisation of light, arrays of objectives, and free-space optics. Optical systems of such switches can theoretically ensure that the resolution and optical losses in two-dimensional image transmission are limited only by diffraction. Estimates are obtained of the main maximum-performance parameters of the proposed optoelectronic image switches.
Widely tunable opto-electronic oscillator
NASA Astrophysics Data System (ADS)
Maxin, J.; Pillet, G.; Morvan, L.; Dolfi, D.
2012-03-01
We present here a widely tunable opto-electronic oscillator (OEO) based on an Er,Yb:glass Dual Frequency Laser (DFL) at 1.53 μm. The beatnote is stabilized with an optical fiber delay line. Compared to classical optoelectronic oscillators, this architecture does not need RF filter and offers a wide tunability. We measured a reduction of 67 dB of the phase noise power spectral density (PSD) at 10 Hz of the carrier optical fiber leading to a level of -27 dBc/Hz with only 100 m optical fiber. Moreover, the scheme offers a microwave signal tunability from 2.5 to 5.5 GHz limited by the RF components.
Organic-Inorganic Composites of Semiconductor Nanocrystals for Efficient Excitonics.
Guzelturk, Burak; Demir, Hilmi Volkan
2015-06-18
Nanocomposites of colloidal semiconductor nanocrystals integrated into conjugated polymers are the key to soft-material hybrid optoelectronics, combining advantages of both plastics and particles. Synergic combination of the favorable properties in the hybrids of colloidal nanocrystals and conjugated polymers offers enhanced performance and new functionalities in light-generation and light-harvesting applications, where controlling and mastering the excitonic interactions at the nanoscale are essential. In this Perspective, we highlight and critically consider the excitonic interactions in the organic-inorganic nanocomposites to achieve highly efficient exciton transfer through rational design of the nanocomposites. The use of strong excitonic interactions in optoelectronic devices can trigger efficiency breakthroughs in hybrid optoelectronics.
Compensating Unknown Time-Varying Delay in Opto-Electronic Platform Tracking Servo System.
Xie, Ruihong; Zhang, Tao; Li, Jiaquan; Dai, Ming
2017-05-09
This paper investigates the problem of compensating miss-distance delay in opto-electronic platform tracking servo system. According to the characteristic of LOS (light-of-sight) motion, we setup the Markovian process model and compensate this unknown time-varying delay by feed-forward forecasting controller based on robust H∞ control. Finally, simulation based on double closed-loop PI (Proportion Integration) control system indicates that the proposed method is effective for compensating unknown time-varying delay. Tracking experiments on the opto-electronic platform indicate that RMS (root-mean-square) error is 1.253 mrad when tracking 10° 0.2 Hz signal.
Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.
Eda, Goki; Chhowalla, Manish
2010-06-11
Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.
Modelling of optoelectronic circuits based on resonant tunneling diodes
NASA Astrophysics Data System (ADS)
Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.
2017-08-01
Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.
Optoelectronic devices, plasmonics, and photonics with topological insulators
NASA Astrophysics Data System (ADS)
Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.
2017-03-01
Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.
A practice course to cultivate students' comprehensive ability of photoelectricity
NASA Astrophysics Data System (ADS)
Lv, Yong; Liu, Yang; Niu, Chunhui; Liu, Lishuang
2017-08-01
After the studying of many theoretical courses, it's important and urgent for the students from specialty of optoelectronic information science and engineering to cultivate their comprehensive ability of photoelectricity. We set up a comprehensive practice course named "Integrated Design of Optoelectronic Information System" (IDOIS) for the purpose that students can integrate their knowledge of optics, electronics and computer programming to design, install and debug an optoelectronic system with independent functions. Eight years of practice shows that this practice course can train students' ability of analysis, design/development and debugging of photoelectric system, improve their ability in document retrieval, design proposal and summary report writing, teamwork, innovation consciousness and skill.
Curriculum system for experimental teaching in optoelectronic information
NASA Astrophysics Data System (ADS)
Di, Hongwei; Chen, Zhenqiang; Zhang, Jun; Luo, Yunhan
2017-08-01
The experimental curriculum system is directly related to talent training quality. Based on the careful investigation of the developing request of the optoelectronic information talents in the new century, the experimental teaching goal and the content, the teaching goal was set to cultivate students' innovative consciousness, innovative thinking, creativity and problem solving ability. Through straightening out the correlation among the experimental teaching in the main courses, the whole structure design was phased out, as well as the hierarchical curriculum connotation. According to the ideas of "basic, comprehensive, applied and innovative", the construction of experimental teaching system called "triple-three" was put forward for the optoelectronic information experimental teaching practice.
Light-Gated Memristor with Integrated Logic and Memory Functions.
Tan, Hongwei; Liu, Gang; Yang, Huali; Yi, Xiaohui; Pan, Liang; Shang, Jie; Long, Shibing; Liu, Ming; Wu, Yihong; Li, Run-Wei
2017-11-28
Memristive devices are able to store and process information, which offers several key advantages over the transistor-based architectures. However, most of the two-terminal memristive devices have fixed functions once made and cannot be reconfigured for other situations. Here, we propose and demonstrate a memristive device "memlogic" (memory logic) as a nonvolatile switch of logic operations integrated with memory function in a single light-gated memristor. Based on nonvolatile light-modulated memristive switching behavior, a single memlogic cell is able to achieve optical and electrical mixed basic Boolean logic of reconfigurable "AND", "OR", and "NOT" operations. Furthermore, the single memlogic cell is also capable of functioning as an optical adder and digital-to-analog converter. All the memlogic outputs are memristive for in situ data storage due to the nonvolatile resistive switching and persistent photoconductivity effects. Thus, as a memdevice, the memlogic has potential for not only simplifying the programmable logic circuits but also building memristive multifunctional optoelectronics.
Holographic Optical Coherence Imaging of Rat Osteogenic Sarcoma Tumor Spheroids
NASA Astrophysics Data System (ADS)
Yu, Ping; Mustata, Mirela; Peng, Leilei; Turek, John J.; Melloch, Michael R.; French, Paul M. W.; Nolte, David D.
2004-09-01
Holographic optical coherence imaging is a full-frame variant of coherence-domain imaging. An optoelectronic semiconductor holographic film functions as a coherence filter placed before a conventional digital video camera that passes coherent (structure-bearing) light to the camera during holographic readout while preferentially rejecting scattered light. The data are acquired as a succession of en face images at increasing depth inside the sample in a fly-through acquisition. The samples of living tissue were rat osteogenic sarcoma multicellular tumor spheroids that were grown from a single osteoblast cell line in a bioreactor. Tumor spheroids are nearly spherical and have radial symmetry, presenting a simple geometry for analysis. The tumors investigated ranged in diameter from several hundred micrometers to over 1 mm. Holographic features from the tumors were observed in reflection to depths of 500-600 µm with a total tissue path length of approximately 14 mean free paths. The volumetric data from the tumor spheroids reveal heterogeneous structure, presumably caused by necrosis and microcalcifications characteristic of some human avascular tumors.
Holographic implementation of a binary associative memory for improved recognition
NASA Astrophysics Data System (ADS)
Bandyopadhyay, Somnath; Ghosh, Ajay; Datta, Asit K.
1998-03-01
Neural network associate memory has found wide application sin pattern recognition techniques. We propose an associative memory model for binary character recognition. The interconnection strengths of the memory are binary valued. The concept of sparse coding is sued to enhance the storage efficiency of the model. The question of imposed preconditioning of pattern vectors, which is inherent in a sparsely coded conventional memory, is eliminated by using a multistep correlation technique an the ability of correct association is enhanced in a real-time application. A potential optoelectronic implementation of the proposed associative memory is also described. The learning and recall is possible by using digital optical matrix-vector multiplication, where full use of parallelism and connectivity of optics is made. A hologram is used in the experiment as a longer memory (LTM) for storing all input information. The short-term memory or the interconnection weight matrix required during the recall process is configured by retrieving the necessary information from the holographic LTM.
In-vivo confirmation of the use of the dart thrower's motion during activities of daily living.
Brigstocke, G H O; Hearnden, A; Holt, C; Whatling, G
2014-05-01
The dart thrower's motion is a wrist rotation along an oblique plane from radial extension to ulnar flexion. We report an in-vivo study to confirm the use of the dart thrower's motion during activities of daily living. Global wrist motion in ten volunteers was recorded using a three-dimensional optoelectronic motion capture system, in which digital infra-red cameras track the movement of retro-reflective marker clusters. Global wrist motion has been approximated to the dart thrower's motion when hammering a nail, throwing a ball, drinking from a glass, pouring from a jug and twisting the lid of a jar, but not when combing hair or manipulating buttons. The dart thrower's motion is the plane of global wrist motion used during most activities of daily living. Arthrodesis of the radiocarpal joint instead of the midcarpal joint will allow better wrist function during most activities of daily living by preserving the dart thrower's motion.
STS-43 MS Adamson checks OCTW experiment on OV-104's aft flight deck
1991-08-11
STS043-04-038 (2-11 Aug 1991) --- Astronaut James C. Adamson, STS-43 mission specialist, checks on an experiment on Atlantis? flight deck. Part of the experiment, Optical Communications Through the Shuttle Window (OCTW), can be seen mounted in upper right. The OCTW system consists of two modules, one inside the orbiter crew cabin (as pictured here) and one in the payload bay. The crew compartment version houses an optoelectronic transmitter/receiver pair for video and digital subsystems, test circuitry and interface circuitry. The payload bay module serves as a repeater station. During operation a signal is transmitted through the shuttle window to a bundle of optical fiber cables mounted in the payload bay near an aft window. The cables carry optical signals from the crew compartment equipment to the OCTW payload bay module. The signals are returned via optical fiber cable to the aft flight deck window, retransmitted through the window, and received by the crew compartment equipment.
Optoelectronic Inner-Product Neural Associative Memory
NASA Technical Reports Server (NTRS)
Liu, Hua-Kuang
1993-01-01
Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.
GaAs optoelectronic neuron arrays
NASA Technical Reports Server (NTRS)
Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri
1993-01-01
A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.
Federal Register 2010, 2011, 2012, 2013, 2014
2013-12-20
... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...
Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer
Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ
2011-02-22
An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.
The Next Stage: Moving from Isolated Digital Collections to Interoperable Digital Libraries.
ERIC Educational Resources Information Center
Besser, Howard
2002-01-01
Presents a conceptual framework for digital library development and discusses how to move from isolated digital collections to interoperable digital libraries. Topics include a history of digital libraries; user-centered architecture; stages of technological development; standards, including metadata; and best practices. (Author/LRW)
NASA Astrophysics Data System (ADS)
Villafañe, V.; Sesin, P.; Soubelet, P.; Anguiano, S.; Bruchhausen, A. E.; Rozas, G.; Carbonell, C. Gomez; Lemaître, A.; Fainstein, A.
2018-05-01
Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, nonlinearities, and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20-GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated with the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.
NASA Astrophysics Data System (ADS)
Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie
2017-11-01
Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.
Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.
Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua
2018-06-21
Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.
Magnetometer based on the opto-electronic microwave oscillator
NASA Astrophysics Data System (ADS)
Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute
2005-03-01
We present a scheme for an all-optical self-oscillating magnetometer based on the opto-electronic oscillator stabilized with an atomic vapor cell. We demonstrate a proof of the principle with DC magnetic field measurements characterized by 2 × 10-7 G sensitivity and 1-1000 mG dynamic range.
Efficient Optoelectronics Teaching in Undergraduate Engineering Curriculum
ERIC Educational Resources Information Center
Matin, M. A.
2005-01-01
The Engineering Department's vision for undergraduate education for the next century is to develop a set of laboratory experiences that are thoughtfully sequenced and integrated to promote the full development of students in all courses. Optoelectronics is one of the most important and most demanding courses in Electrical and Computer Engineering.…
Correction factor in temperature measurements by optoelectronic systems
NASA Astrophysics Data System (ADS)
Bikberdina, N.; Yunusov, R.; Boronenko, M.; Gulyaev, P.
2017-11-01
It is often necessary to investigate high temperature fast moving microobjects. If you want to measure their temperature, use optoelectronic measuring systems. Optoelectronic systems are always calibrated over a stationary absolutely black body. One of the problems of pyrometry is that you can not use this calibration to measure the temperature of moving objects. Two solutions are proposed in [1]. This article outlines the first results of validation [2]. An experimentally justified coefficient that allows one to take into account the influence of its motion on the decrease in the video signal of the photosensor in the regime of charge accumulation. The study was partially supported by RFBR in the framework of a research project № 15-42-00106
Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.
Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei
2013-10-13
Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.
Analysis of the frontier technology of agricultural IoT and its predication research
NASA Astrophysics Data System (ADS)
Han, Shuqing; Zhang, Jianhua; Zhu, Mengshuai; Wu, Jianzhai; Shen, Chen; Kong, Fantao
2017-09-01
Agricultural IoT (Internet of Things) develops rapidly. Nanotechnology, biotechnology and optoelectronic technology are successfully integrated into the agricultural sensor technology. Big data, cloud computing and artificial intelligence technology have also been successfully used in IoT. This paper carries out the research on integration of agricultural sensor technology, nanotechnology, biotechnology and optoelectronic technology and the application of big data, cloud computing and artificial intelligence technology in agricultural IoT. The advantages and development of the integration of nanotechnology, biotechnology and optoelectronic technology with agricultural sensor technology were discussed. The application of big data, cloud computing and artificial intelligence technology in IoT and their development trend were analysed.
Optical fiber sensors embedded in flexible polymer foils
NASA Astrophysics Data System (ADS)
van Hoe, Bram; van Steenberge, Geert; Bosman, Erwin; Missinne, Jeroen; Geernaert, Thomas; Berghmans, Francis; Webb, David; van Daele, Peter
2010-04-01
In traditional electrical sensing applications, multiplexing and interconnecting the different sensing elements is a major challenge. Recently, many optical alternatives have been investigated including optical fiber sensors of which the sensing elements consist of fiber Bragg gratings. Different sensing points can be integrated in one optical fiber solving the interconnection problem and avoiding any electromagnetical interference (EMI). Many new sensing applications also require flexible or stretchable sensing foils which can be attached to or wrapped around irregularly shaped objects such as robot fingers and car bumpers or which can even be applied in biomedical applications where a sensor is fixed on a human body. The use of these optical sensors however always implies the use of a light-source, detectors and electronic circuitry to be coupled and integrated with these sensors. The coupling of these fibers with these light sources and detectors is a critical packaging problem and as it is well-known the costs for packaging, especially with optoelectronic components and fiber alignment issues are huge. The end goal of this embedded sensor is to create a flexible optical sensor integrated with (opto)electronic modules and control circuitry. To obtain this flexibility, one can embed the optical sensors and the driving optoelectronics in a stretchable polymer host material. In this article different embedding techniques for optical fiber sensors are described and characterized. Initial tests based on standard manufacturing processes such as molding and laser structuring are reported as well as a more advanced embedding technique based on soft lithography processing.
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
NASA Astrophysics Data System (ADS)
Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy
2016-12-01
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.
Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications
NASA Astrophysics Data System (ADS)
Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien
2017-11-01
With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.
Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications.
Romeira, Bruno; Figueiredo, José M L; Javaloyes, Julien
2017-11-01
With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.
Banerjee, Swastika; Jiang, Xiangwei; Wang, Lin-Wang
2018-04-04
β-Ga2O3 has drawn recent attention as a state-of-the-art electronic material due to its stability, optical transparency and appealing performance in power devices. However, it has also found a wider range of opto-electronic applications including photocatalysis, especially in its porous form. For such applications, a lower band gap must be obtained and an electron-hole spatial separation would be beneficial. Like many other metal oxides (e.g. Al2O3), Ga2O3 can also form various types of porous structure. In the present study, we investigate how its optical and electronic properties can be changed in a particular porous structure with stoichiometrically balanced and extended vacancy channels. We apply a set of first principles computational methods to investigate the formation and the structural, dynamic, and opto-electronic properties. We find that such an extended vacancy channel is mechanically stable and has relatively low formation energy. We also find that this results in a spatial separation of the electron and hole, forming a long-lived charge transfer state that has desirable characteristics for a photocatalyst. In addition, the electronic band gap reduces to the vis-region unlike the transparency in the pure β-Ga2O3 crystal. Thus, our systematic study is promising for the application of such a porous structure of β-Ga2O3 as a versatile electronic material.
NASA Astrophysics Data System (ADS)
Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.
2011-11-01
Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.
Quantum Engineering of States in Heterostructure-based Detectors for Enhance Performance
2017-05-26
excited carrier contribution in these heterostructure- based photodetectors has been reduced by using phonon-assisted transitions to design structures ...experimental investigations of nanostructure- based electronic and optoelectronic structures with the goal of facilitating major improvements in the performance...nanostructures. Quantum engineering of nano- structures is emphasized. Related quantum- based structures – including those with spontaneous polarizations are
Building a DAM To Last: Archiving Digital Assets.
ERIC Educational Resources Information Center
Zeichick, Alan
2003-01-01
Discusses archiving digital information and the need for organizations to develop policies regarding digital asset management (DAM) and storage. Topics include determining the value of digital assets; formats of digital information; use of stored information; and system architecture, including hardware and asset management software. (LRW)
A Dual-Loop Opto-Electronic Oscillator
NASA Astrophysics Data System (ADS)
Yao, X. S.; Maleki, L.; Ji, Y.; Lutes, G.; Tu, M.
1998-07-01
We describe and demonstrate a multiloop technique for single-mode selection in an opto-electronic oscillator (OEO). We present experimental results of a dual-loop OEO free running at 10 GHz that has the lowest phase noise (-140 dBc/Hz at 10 kHz from the carrier) of all free-running room-temperature oscillators to date.
1992-03-20
34 Interband Transitions in InGaAs/GaAs Strained Layer Superlattices ," J. of Vac. Sci and Technol. B, Vol. 7(5), pp. 1106-1110, 1989. 33 B. Kh...2 II. C. Resonant Cavity-Enhanced Photodetectors ................................ .............. 3 II. D. Wavelength Selective Optoelectronic...Simultions of Electronic States in Semiconductor Quantum Wells and Superlattices under Electrical Field ................................ ....... 5 II. G . G
Functionalized polyfluorenes for use in optoelectronic devices
Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY
2011-11-01
The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.
The Use of Opto-Electronics in Viscometry.
ERIC Educational Resources Information Center
Mazza, R. J.; Washbourn, D. H.
1982-01-01
Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)
Organic photosensitive devices
Rand, Barry P; Forrest, Stephen R
2013-11-26
The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.
Optoelectronic interconnects for 3D wafer stacks
NASA Astrophysics Data System (ADS)
Ludwig, David E.; Carson, John C.; Lome, Louis S.
1996-01-01
Wafer and chip stacking are envisioned as a means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper provides definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies are discussed.
Optoelectronic interconnects for 3D wafer stacks
NASA Astrophysics Data System (ADS)
Ludwig, David; Carson, John C.; Lome, Louis S.
1996-01-01
Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.
Zhang, Shuai; Lu, Zhufeng; Gu, Li; Cai, Liling; Cao, Xuebo
2013-11-22
We describe a synchronous reduction and assembly procedure to directly produce large-area reduced graphene oxide (rGO) films sandwiched by a high density of metal nanoparticles (silver and copper). Further, by using the sandwiched metal NPs as sources, networks consisting of AgTCNQ and CuTCNQ nanowires were deterministically grown from the rGO films, forming structurally and functionally integrated rGO/metal-TCNQ hybrid films with outstanding flexibility, bending endurance, and electrical stability. Interestingly, due to the p-type nature of the rGO film and the n-type nature of the metal-TCNQ NWs, the hybrid films are essentially thin-film p-n junctions which are useful in ubiquitous electronics and optoelectronics. Measurements of the optoelectronic properties demonstrate that the rGO/metal-TCNQ hybrid films exhibit substantial photoconductivity and highly reproducible photoswitching behaviours. The present approach may open the door to the versatile and deterministic integration of functional nanostructures into flexible conducting substrates and provide an important step towards producing low-cost and high-performance soft electronic and optoelectronic devices.
Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng
2015-10-01
Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.
Yuan, Kai; Chen, Lie; Chen, Yiwang
2014-09-01
The direct growth of CdS nanocrystals in functional solid-state thermotropic liquid crystal (LC) small molecules and a conjugated LC polymer by in situ thermal decomposition of a single-source cadmium xanthate precursor to fabricate LC/CdS hybrid nanocomposites is described. The influence of thermal annealing temperature of the LC/CdS precursors upon the nanomorphology, photophysics, and optoelectronic properties of the LC/CdS nanocomposites is systematically studied. Steady-state PL and ultrafast emission dynamics studies show that the charge-transfer rates are strongly dependent on the thermal annealing temperature. Notably, annealing at liquid-crystal state temperature promotes a more organized nanomorphology of the LC/CdS nanocomposites with improved photophysics and optoelectronic properties. The results confirm that thermotropic LCs can be ideal candidates as organization templates for the control of organic/inorganic hybrid nanocomposites at the nanoscale level. The results also demonstrate that in situ growth of semiconducting nanocrystals in thermotropic LCs is a versatile route to hybrid organic/inorganic nanocomposites and optoelectronic devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Bechtler, Laurie; Velidandla, Vamsi
2003-04-01
In response to demand for higher volumes and greater product capability, integrated optoelectronic device processing is rapidly increasing in complexity, benefiting from techniques developed for conventional silicon integrated circuit processing. The needs for high product yield and low manufacturing cost are also similar to the silicon wafer processing industry. This paper discusses the design and use of an automated inspection instrument called the Optical Surface Analyzer (OSA) to evaluate two critical production issues in optoelectronic device manufacturing: (1) film thickness uniformity, and (2) defectivity at various process steps. The OSA measurement instrument is better suited to photonics process development than most equipment developed for conventional silicon wafer processing in two important ways: it can handle both transparent and opaque substrates (unlike most inspection and metrology tools), and it is a full-wafer inspection method that captures defects and film variations over the entire substrate surface (unlike most film thickness measurement tools). Measurement examples will be provided in the paper for a variety of films and substrates used for optoelectronics manufacturing.
Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng
2015-01-01
Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297
Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian
2017-12-04
High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.
Patterning of conjugated polymers for organic optoelectronic devices.
Xu, Youyong; Zhang, Fan; Feng, Xinliang
2011-05-23
Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.
Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang
2016-03-22
Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.
Wang, Gongming; Li, Dehui; Cheng, Hung -Chieh; ...
2015-10-02
Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that themore » resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. Furthermore, the ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.« less
``Effect of Polyalkylthiophene Microstructure on Physical and Optoelectronic Properties''
NASA Astrophysics Data System (ADS)
Minkler, Michael J., Jr.; Beckingham, Bryan S.
Conjugated polymers have been of widespread interest as flexible semiconductors for organic electronic devices such as solar cells, field effect transistor,s and light-emitting diodes. Of particular interest have been alkyl-substituted polythiophenes due to their well-controlled synthesis, favorable optoelectronic properties, and solubility in organic solvents. Importantly, relatively small changes to the chemical microstructure in poly(3-alkylthiophenes) (P3ATs) can have a significant effect on the resulting physical and optoelectronic properties. For instance, the addition of aliphatic side chains onto unsubstituted polythiophene provides solubility but also greatly decreases conductivity in comparison to unsubstituted polythiophene (PT). In this work, we use Grignard metathesis polymerization to synthesize poly(3-hexylthiophene) (P3HT), PT, and statistical copolymers (P[3HT-co-T]) over a range of compositions. We examine the physical properties (melting temperature, crystallinity, etc) by differential scanning calorimetry and wide angle X-ray scattering, optoelectronic properties by UV/Vis spectroscopy, and solubility in organic solvents of these copolymers in order to gain insights into the interplay of microstructure and properties in this class of materials.
Integrated bio-fluorescence sensor.
Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S
2003-09-26
Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.
Optoelectronic-cache memory system architecture.
Chiarulli, D M; Levitan, S P
1996-05-10
We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.
Ultrasonic imaging using optoelectronic transmitters.
Emery, C D; Casey, H C; Smith, S W
1998-04-01
Conventional ultrasound scanners utilize electronic transmitters and receivers at the scanner with a separate coaxial cable connected to each transducer element in the handle. The number of transducer elements determines the size and weight of the transducer cable assembly that connects the imaging array to the scanner. 2-D arrays that allow new imaging modalities to be introduced significantly increase the channel count making the transducer cable assembly more difficult to handle. Therefore, reducing the size and increasing the flexibility of the transducer cable assembly is a concern. Fiber optics can be used to transmit signals optically and has distinct advantages over standard coaxial cable to increase flexibility and decrease the weight of the transducer cable for larger channel numbers. The use of fiber optics to connect the array and the scanner entails the use of optoelectronics such as detectors and laser diodes to send and receive signals. In transmit, optoelectronics would have to be designed to produce high-voltage wide-bandwidth pulses across the transducer element. In this paper, we describe a 48 channel ultrasound system having 16 optoelectronic transmitters and 32 conventional electronic receivers. We investigated both silicon avalanche photodiodes (APD's) and GaAs lateral photoconductive semiconductor switches (PCSS's) for producing the transmit pulses. A Siemens SI-1200 scanner and a 2.25 MHz linear array were used to compare the optoelectronic system to a conventional electronic transmit system. Transmit signal results and images in tissue mimicking of cysts and tumors are provided for comparison.
Two different ways for waveguides and optoelectronics components on top of C-MOS
NASA Astrophysics Data System (ADS)
Fedeli, J. M.; Jeannot, S.; Kostrzewa, M.; Di Cioccio, L.; Jousseaume, V.; Orobtchouk, R.; Maury, P.; Zussy, M.
2006-02-01
While fabrication of photonic components at the wafer level is a long standing goal of integrated optics, new applications such as optical interconnects are introducing new challenges for waveguides and optoelectronic component fabrication. Indeed, global interconnects are expected to face severe limitations in the near future. To face this problem, optical links on top of a CMOS circuits could be an alternative. The critical points to perform an optical link on a chip are firstly the realization of compact passive optical distribution and secondly the report of optoelectronic components for the sources and detectors. This paper presents two different approaches for the integration of both waveguides and optoelectronic components. In a first "total bonding" approach, waveguides have been elaborated using classical "Silicon On Insulators" technology and then reported using molecular bonding on top off Si wafers. The S0I substrate was then chemically etched, after what InP dies were moleculary bonded on top of the waveguides. With this approach, optical components with low loses and a good equilibrium are demonsrated. Using molecular bonding, InP dies were reported with no degradation of the optoelectronic properties of the films. In a second approach, using PECVD silicon nitride or amorphous silicon coupled to PECVD silicon oxide, basic optical components are demonstrated. This low temperature technology is compatible with a microelectronic Back End process, allowing an integration of the waveguides directly on top of CMOS circuits. InP dies can then be bonded on top of the waveguides.
Multi-material optoelectronic fiber devices
NASA Astrophysics Data System (ADS)
Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.
2017-05-01
The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.
Research on hyperspectral dynamic scene and image sequence simulation
NASA Astrophysics Data System (ADS)
Sun, Dandan; Gao, Jiaobo; Sun, Kefeng; Hu, Yu; Li, Yu; Xie, Junhu; Zhang, Lei
2016-10-01
This paper presents a simulation method of hyper-spectral dynamic scene and image sequence for hyper-spectral equipment evaluation and target detection algorithm. Because of high spectral resolution, strong band continuity, anti-interference and other advantages, in recent years, hyper-spectral imaging technology has been rapidly developed and is widely used in many areas such as optoelectronic target detection, military defense and remote sensing systems. Digital imaging simulation, as a crucial part of hardware in loop simulation, can be applied to testing and evaluation hyper-spectral imaging equipment with lower development cost and shorter development period. Meanwhile, visual simulation can produce a lot of original image data under various conditions for hyper-spectral image feature extraction and classification algorithm. Based on radiation physic model and material characteristic parameters this paper proposes a generation method of digital scene. By building multiple sensor models under different bands and different bandwidths, hyper-spectral scenes in visible, MWIR, LWIR band, with spectral resolution 0.01μm, 0.05μm and 0.1μm have been simulated in this paper. The final dynamic scenes have high real-time and realistic, with frequency up to 100 HZ. By means of saving all the scene gray data in the same viewpoint image sequence is obtained. The analysis results show whether in the infrared band or the visible band, the grayscale variations of simulated hyper-spectral images are consistent with the theoretical analysis results.
Modern approaches for a design and development of optoelectronic measuring systems
NASA Astrophysics Data System (ADS)
Nekrylov, Ivan S.; Korotaev, Valery V.; Denisov, Victor M.; Kleshchenok, Maksim A.
2016-04-01
In the world is the widespread adoption of measuring equipment of new generation, which is characterized by small size, high automation level, a multi-channel, digital filtering, satellite synchronization, wireless communication, digital record in long-term memory with great resource, powered by long-lived sources, etc. However, modern equipment base of the Russian institutions and the level of development of technical facilities and measuring technologies lag far behind developed countries. For this reason, the vacated niches are actively developed by foreign companies. For example, more than 70% instrumentation performing works on the territory of Russia, equipped with imported equipment (products of Sweden and Germany companies); the amount of work performed with German equipment is more than 70% of the total volume of these works; more than 80% of industrial measurements are performed using HEXAGON equipment (Sweden). These trends show that the Russian sector of measuring technology gradually become import-dependent, which poses a threat to the economic security of the country and consistent with national priorities. The results of the research will allow to develop the theory of formation of control systems of the displacement with high accuracy and unattainable for the existing analogue ergonomic and weight characteristics combined with a comparable or lower cost. These advantages will allow you to be successful competition, and eventually to supplant the existing system, which had no fundamental changes in the last 20 years and, therefore, retained all the drawbacks: large size and weight, high power consumption, the dependence on magnetic fields.
NASA Astrophysics Data System (ADS)
Krasilenko, Vladimir G.; Lazarev, Alexander A.; Nikitovich, Diana V.
2017-10-01
The paper considers results of design and modeling of continuously logical base cells (CL BC) based on current mirrors (CM) with functions of preliminary analogue and subsequent analogue-digital processing for creating sensor multichannel analog-to-digital converters (SMC ADCs) and image processors (IP). For such with vector or matrix parallel inputs-outputs IP and SMC ADCs it is needed active basic photosensitive cells with an extended electronic circuit, which are considered in paper. Such basic cells and ADCs based on them have a number of advantages: high speed and reliability, simplicity, small power consumption, high integration level for linear and matrix structures. We show design of the CL BC and ADC of photocurrents and their various possible implementations and its simulations. We consider CL BC for methods of selection and rank preprocessing and linear array of ADCs with conversion to binary codes and Gray codes. In contrast to our previous works here we will dwell more on analogue preprocessing schemes for signals of neighboring cells. Let us show how the introduction of simple nodes based on current mirrors extends the range of functions performed by the image processor. Each channel of the structure consists of several digital-analog cells (DC) on 15-35 CMOS. The amount of DC does not exceed the number of digits of the formed code, and for an iteration type, only one cell of DC, complemented by the device of selection and holding (SHD), is required. One channel of ADC with iteration is based on one DC-(G) and SHD, and it has only 35 CMOS transistors. In such ADCs easily parallel code can be realized and also serial-parallel output code. The circuits and simulation results of their design with OrCAD are shown. The supply voltage of the DC is 1.8÷3.3V, the range of an input photocurrent is 0.1÷24μA, the transformation time is 20÷30nS at 6-8 bit binary or Gray codes. The general power consumption of the ADC with iteration is only 50÷100μW, if the maximum input current is 4μA. Such simple structure of linear array of ADCs with low power consumption and supply voltage 3.3V, and at the same time with good dynamic characteristics (frequency of digitization even for 1.5μm CMOS-technologies is 40÷50 MHz, and can be increased up to 10 times) and accuracy characteristics are show. The SMC ADCs based on CL BC and CM opens new prospects for realization of linear and matrix IP and photo-electronic structures with matrix operands, which are necessary for neural networks, digital optoelectronic processors, neural-fuzzy controllers.
Spörri, Jörg; Schiefermüller, Christian; Müller, Erich
2016-01-01
In the laboratory, optoelectronic stereophotogrammetry is one of the most commonly used motion capture systems; particularly, when position- or orientation-related analyses of human movements are intended. However, for many applied research questions, field experiments are indispensable, and it is not a priori clear whether optoelectronic stereophotogrammetric systems can be expected to perform similarly to in-lab experiments. This study aimed to assess the instrumental errors of kinematic data collected on a ski track using optoelectronic stereophotogrammetry, and to investigate the magnitudes of additional skiing-specific errors and soft tissue/suit artifacts. During a field experiment, the kinematic data of different static and dynamic tasks were captured by the use of 24 infrared-cameras. The distances between three passive markers attached to a rigid bar were stereophotogrammetrically reconstructed and, subsequently, were compared to the manufacturer-specified exact values. While at rest or skiing at low speed, the optoelectronic stereophotogrammetric system's accuracy and precision for determining inter-marker distances were found to be comparable to those known for in-lab experiments (< 1 mm). However, when measuring a skier's kinematics under "typical" skiing conditions (i.e., high speeds, inclined/angulated postures and moderate snow spraying), additional errors were found to occur for distances between equipment-fixed markers (total measurement errors: 2.3 ± 2.2 mm). Moreover, for distances between skin-fixed markers, such as the anterior hip markers, additional artifacts were observed (total measurement errors: 8.3 ± 7.1 mm). In summary, these values can be considered sufficient for the detection of meaningful position- or orientation-related differences in alpine skiing. However, it must be emphasized that the use of optoelectronic stereophotogrammetry on a ski track is seriously constrained by limited practical usability, small-sized capture volumes and the occurrence of extensive snow spraying (which results in marker obscuration). The latter limitation possibly might be overcome by the use of more sophisticated cluster-based marker sets.
NASA Astrophysics Data System (ADS)
Mentzer, Mark A.; Sriram, S.
The design and implementation of integrated optical circuits are discussed in reviews and reports. Topics addressed include lithium niobate devices, silicon integrated optics, waveguide phenomena, coupling considerations, processing technology, nonlinear guided-wave optics, integrated optics for fiber systems, and systems considerations and applications. Also included are eight papers and a panel discussion from an SPIE conference on the processing of guided-wave optoelectronic materials (held in Los Angeles, CA, on January 21-22, 1986).
Organic photosensitive devices using subphthalocyanine compounds
Rand, Barry [Princeton, NJ; Forrest, Stephen R [Ann Arbor, MI; Mutolo, Kristin L [Hollywood, CA; Mayo, Elizabeth [Alhambra, CA; Thompson, Mark E [Anaheim Hills, CA
2011-07-05
An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.
Extreme Light Management in Mesoporous Wood Cellulose Paper for Optoelectronics.
Zhu, Hongli; Fang, Zhiqiang; Wang, Zhu; Dai, Jiaqi; Yao, Yonggang; Shen, Fei; Preston, Colin; Wu, Wenxin; Peng, Peng; Jang, Nathaniel; Yu, Qingkai; Yu, Zongfu; Hu, Liangbing
2016-01-26
Wood fibers possess natural unique hierarchical and mesoporous structures that enable a variety of new applications beyond their traditional use. We dramatically modulate the propagation of light through random network of wood fibers. A highly transparent and clear paper with transmittance >90% and haze <1.0% applicable for high-definition displays is achieved. By altering the morphology of the same wood fibers that form the paper, highly transparent and hazy paper targeted for other applications such as solar cell and antiglare coating with transmittance >90% and haze >90% is also achieved. A thorough investigation of the relation between the mesoporous structure and the optical properties in transparent paper was conducted, including full-spectrum optical simulations. We demonstrate commercially competitive multitouch touch screen with clear paper as a replacement for plastic substrates, which shows excellent process compatibility and comparable device performance for commercial applications. Transparent cellulose paper with tunable optical properties is an emerging photonic material that will realize a range of much improved flexible electronics, photonics, and optoelectronics.
Oden, Jérémy; Lavrov, Roman; Chembo, Yanne K; Larger, Laurent
2017-11-01
We propose a chaos communication scheme based on a chaotic optical phase carrier generated with an optoelectronic oscillator with nonlinear time-delay feedback. The system includes a dedicated non-local nonlinearity, which is a customized three-wave imbalanced interferometer. This particular feature increases the complexity of the chaotic waveform and thus the security of the transmitted information, as these interferometers are characterized by four independent parameters which are part of the secret key for the chaos encryption scheme. We first analyze the route to chaos in the system, and evidence a sequence of period doubling bifurcations from the steady-state to fully developed chaos. Then, in the chaotic regime, we study the synchronization between the emitter and the receiver, and achieve chaotic carrier cancellation with a signal-to-noise ratio up to 20 dB. We finally demonstrate error-free chaos communications at a data rate of 3 Gbit/s.
Understanding the Unique Properties of Organometal Trihalide Perovskite with Single Crystals
NASA Astrophysics Data System (ADS)
Huang, Jinsong
Organometal Trihalide Perovskite has been discovered to be all-round optoelectronic materials many types of electronic devices. The understanding of this family of materials is however limited yet due to the complicated grain structures in polycrystalline films which are generally used in most of the devices. In this contribution, I will present our recent progress in understanding the fundamental properties, including optoelectronic properties and electromechanical properties, using the high quality organometal trihalide perovskite single crystals. I will report the crystallographic orientation dependent charge transport and collection, surface and bulk charge recombination process, and direction measuring of carrier diffusion length using the lasing induced photocurrent scanning. The polarity of the organometal trihalide perovskite crystals will also be examined. We thank financial support from SunShot Initiative at Department of Energy under Award DE-EE0006709, and from National Science Foundation Grant DMR-1505535 and Grant DMR-1420645, and from Office of Naval Research under Award N00014-15-1-2713.
Software for Use with Optoelectronic Measuring Tool
NASA Technical Reports Server (NTRS)
Ballard, Kim C.
2004-01-01
A computer program has been written to facilitate and accelerate the process of measurement by use of the apparatus described in "Optoelectronic Tool Adds Scale Marks to Photographic Images" (KSC-12201). The tool contains four laser diodes that generate parallel beams of light spaced apart at a known distance. The beams of light are used to project bright spots that serve as scale marks that become incorporated into photographic images (including film and electronic images). The sizes of objects depicted in the images can readily be measured by reference to the scale marks. The computer program is applicable to a scene that contains the laser spots and that has been imaged in a square pixel format that can be imported into a graphical user interface (GUI) generated by the program. It is assumed that the laser spots and the distance(s) to be measured all lie in the same plane and that the plane is perpendicular to the line of sight of the camera used to record the image
Advanced interdisciplinary undergraduate program: light engineering
NASA Astrophysics Data System (ADS)
Bakholdin, Alexey; Bougrov, Vladislav; Voznesenskaya, Anna; Ezhova, Kseniia
2016-09-01
The undergraduate educational program "Light Engineering" of an advanced level of studies is focused on development of scientific learning outcomes and training of professionals, whose activities are in the interdisciplinary fields of Optical engineering and Technical physics. The program gives practical experience in transmission, reception, storage, processing and displaying information using opto-electronic devices, automation of optical systems design, computer image modeling, automated quality control and characterization of optical devices. The program is implemented in accordance with Educational standards of the ITMO University. The specific features of the Program is practice- and problem-based learning implemented by engaging students to perform research and projects, internships at the enterprises and in leading Russian and international research educational centers. The modular structure of the Program and a significant proportion of variable disciplines provide the concept of individual learning for each student. Learning outcomes of the program's graduates include theoretical knowledge and skills in natural science and core professional disciplines, deep knowledge of modern computer technologies, research expertise, design skills, optical and optoelectronic systems and devices.
Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams
Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.; ...
2016-08-02
Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, wemore » observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.« less
Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams
DOE Office of Scientific and Technical Information (OSTI.GOV)
Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.
Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, wemore » observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.« less
Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
NASA Astrophysics Data System (ADS)
Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.; Stanford, Michael G.; Lin, Ming-Wei; Li, Xufan; Mahjouri-Samani, Masoud; Jesse, Stephen; Sumpter, Bobby G.; Kalinin, Sergei V.; Joy, David C.; Xiao, Kai; Belianinov, Alex; Ovchinnikova, Olga S.
2016-08-01
Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction the of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe2 locally, and decipher associated mechanisms at the atomic level. We demonstrate He+ beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and increases the Young’s modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at the room temperature. The approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.
Intelligent fiber optic sensor for solution concentration examination
NASA Astrophysics Data System (ADS)
Borecki, Michal; Kruszewski, Jerzy
2003-09-01
This paper presents the working principles of intelligent fiber-optic intensity sensor used for solution concentration examination. The sensor head is the ending of the large core polymer optical fiber. The head works on the reflection intensity basis. The reflected signal level depends on Fresnel reflection and reflection on suspended matter when the head is submersed in solution. The sensor head is mounted on a lift. For detection purposes the signal includes head submerging, submersion, emerging and emergence is measured. This way the viscosity turbidity and refraction coefficient has an effect on measured signal. The signal forthcoming from head is processed electrically in opto-electronic interface. Then it is feed to neural network. The novelty of presented sensor is implementation of neural network that works in generalization mode. The sensor resolution depends on opto-electronic signal conversion precision and neural network learning accuracy. Therefore, the number and quality of points used for learning process is very important. The example sensor application for examination of liquid soap concentration in water is presented in the paper.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mohite, Aditya; Blancon, Jean-Christophe
In the eternal search for next generation high-efficiency solar cells and LEDs, scientists at Los Alamos National Laboratory and their partners are gaining an extra degree of freedom in designing and fabricating efficient optoelectronic devices based on 2D layered hybrid perovskites. Industrial applications could include low cost solar cells, LEDs, laser diodes, detectors, and other nano-optoelectronic devices. The 2D, near-single-crystalline “Ruddlesden-Popper” thin films have an out-of-plane orientation so that uninhibited charge transport occurs through the perovskite layers in planar devices. The new research finds the existence of “layer-edge-states” at the edges of the perovskite layers which are key to bothmore » high efficiency of solar cells (greater than 12 percent) and high fluorescence efficiency (a few tens of percent) for LEDs. The spontaneous conversion of excitons (bound electron-hole pairs) to free carriers via these layer-edge states appears to be the key to the improvement of the photovoltaic and light-emitting thin film layered materials.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Matz, Dallas L.; Schalnat, Matthew C.; Pemberton, Jeanne E.
The reaction between small organic molecules and low work function metals is of interest in organometallic, astronomical, and optoelectronic device chemistry. Here, thin, solid-state, amorphous benzene and pyridine films are reacted with Ca at 30 K under ultrahigh vacuum with the reaction progress monitored by Raman spectroscopy. Although both films react with Ca to produce product species identifiable by their vibrational spectroscopic signatures, benzene is less reactive with Ca than pyridine. Benzene reacts by electron transfer from Ca to benzene producing multiple species including the phenyl radical anion, the phenyl radical, and the benzyne diradical. Pyridine initially reacts along amore » similar electron transfer pathway as indicated by the presence of the corresponding pyridyl radical and pyridyne diradical species, but these pyridyl radicals are less stable and subject to further ring-opening reactions that lead to a complex array of smaller molecule reaction products and ultimately amorphous carbon. The elucidation of this reaction pathway provides insight into the reactions of aromatics with Ca that are relevant in the areas of catalysis, astrochemistry, and organic optoelectronics.« less
Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun
2009-04-01
This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).
NASA Astrophysics Data System (ADS)
Oden, Jérémy; Lavrov, Roman; Chembo, Yanne K.; Larger, Laurent
2017-11-01
We propose a chaos communication scheme based on a chaotic optical phase carrier generated with an optoelectronic oscillator with nonlinear time-delay feedback. The system includes a dedicated non-local nonlinearity, which is a customized three-wave imbalanced interferometer. This particular feature increases the complexity of the chaotic waveform and thus the security of the transmitted information, as these interferometers are characterized by four independent parameters which are part of the secret key for the chaos encryption scheme. We first analyze the route to chaos in the system, and evidence a sequence of period doubling bifurcations from the steady-state to fully developed chaos. Then, in the chaotic regime, we study the synchronization between the emitter and the receiver, and achieve chaotic carrier cancellation with a signal-to-noise ratio up to 20 dB. We finally demonstrate error-free chaos communications at a data rate of 3 Gbit/s.
Intersatellite communications optoelectronics research at the Goddard Space Flight Center
NASA Technical Reports Server (NTRS)
Krainak, Michael A.
1992-01-01
A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.
NASA Astrophysics Data System (ADS)
Balakin, M.; Gulyaev, A.; Kazaryan, A.; Yarovoy, O.
2018-04-01
We study influence of time delay in coupling on the dynamics of two coupled multimode optoelectronic oscillators. We reveal the structure of main synchronization region on the parameter plane and main bifurcations leading to synchronization and multistability formation. The dynamics of the system is studied in a wide range of values of control parameters.
Optoelectronic fuzzy associative memory with controllable attraction basin sizes
NASA Astrophysics Data System (ADS)
Wen, Zhiqing; Campbell, Scott; Wu, Weishu; Yeh, Pochi
1995-10-01
We propose and demonstrate a new fuzzy associative memory model that provides an option to control the sizes of the attraction basins in neural networks. In our optoelectronic implementation we use spatial/polarization encoding to represent the fuzzy variables. Shadow casting of the encoded patterns is employed to yield the fuzzy-absolute difference between fuzzy variables.
Magnetometer Based on the Opto-Electronic Oscillator
NASA Technical Reports Server (NTRS)
Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute
2005-01-01
We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.
Readout systems for inner detectors at the LHC and SLHC
NASA Astrophysics Data System (ADS)
Issever, Cigdem
2006-12-01
A general overview of the optoelectronic readout and control systems of the ATLAS and CMS inner detectors is given. The talk will also cover challenges and issues of future optoelectronic readout systems at the upgraded LHC (SLHC). First results of radiation tests of VCSELs and optical fibres which were irradiated up to SLHC fluences will be presented.
Sheng, Yun; Sun, Huabin; Wang, Jianyu; Gao, Fan; Wang, Junzhuan; Pan, Lijia; Pu, Lin; Zheng, Youdou; Shi, Yi
2013-01-18
A strategy of using structurally matched alumina insulation to produce lateral electrodes on semiconductor nanowires is presented. Nanowires in the architecture are structurally matched with alumina insulation using selective anodic oxidation. Lateral electrodes are fabricated by directly evaporating metallic atoms onto the opposite sides of the nanowires. The integrated architecture with lateral electrodes propels carriers to transport them across nanowires and is crucially beneficial to the injection/extraction in optoelectronics. The matched architecture and the insulating properties of the alumina layer are investigated experimentally. ZnO nanowires are functionalized into an ultraviolet photodiode as an example. The present strategy successfully implements an advantageous architecture and is significant in developing diverse semiconductor nanowires in optoelectronic applications.
A full-duplex working integrated optoelectronic device for optical interconnect
NASA Astrophysics Data System (ADS)
Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei
2018-05-01
In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.
Jiménez-Solano, Alberto; Galisteo-López, Juan F; Míguez, Hernán
2018-04-19
Tailoring the interaction of electromagnetic radiation with matter is central to the development of optoelectronic devices. This becomes particularly relevant for a new generation of devices offering the possibility of solution processing with competitive efficiencies as well as new functionalities. These devices, containing novel materials such as inorganic colloidal quantum dots or hybrid organic-inorganic lead halide perovskites, commonly demand thin (tens of nanometers) active layers in order to perform optimally and thus maximizing the way electromagnetic radiation interacts with these layers is essential. In this Perspective, we discuss the relevance of tailoring the optical environment of the active layer in an optoelectronic device and illustrate it with two real-world systems comprising photovoltaic cells and light emitting devices.
Center for Opto-Electronic Systems Research.
1988-02-01
Stroud, Jr. The Institute of Optics, University of Rochester Rochester, New York 14627 USA Abstract The Jaynes - Cummings model of a single two-level...surfaces, possibly to include certain classes of surfaces without rotational symmetry. An initial investigation was made of the surface roughness...number density of approximately 1018 - and the forward-going pump wave both enter the nonlinear -.molecules/cm3 . The intensities of the interacting
Digital Collections, Digital Libraries and the Digitization of Cultural Heritage Information.
ERIC Educational Resources Information Center
Lynch, Clifford
2002-01-01
Discusses the development of digital collections and digital libraries. Topics include digitization of cultural heritage information; broadband issues; lack of compelling content; training issues; types of materials being digitized; sustainability; digital preservation; infrastructure; digital images; data mining; and future possibilities for…
Digital Collections, Digital Libraries & the Digitization of Cultural Heritage Information.
ERIC Educational Resources Information Center
Lynch, Clifford
2002-01-01
Discusses digital collections and digital libraries. Topics include broadband availability; digital rights protection; content, both non-profit and commercial; digitization of cultural content; sustainability; metadata harvesting protocol; infrastructure; authorship; linking multiple resources; data mining; digitization of reference works;…
Control of the hierarchical assembly of π-conjugated optoelectronic peptides by pH and flow
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mansbach, Rachael A.; Ferguson, Andrew L.
Self-assembled nanoaggregates of p-conjugated peptides possess optoelectronic properties due to electron delocalization over the conjugated peptide groups that make them attractive candidates for the fabrication of bioelectronic materials. We present a computational and theoretical study to resolve the microscopic effects of pH and flow on the non-equilibrium morphology and kinetics of early-stage assembly of an experimentally-realizable optoelectronic peptide that displays pH triggerable assembly. Employing coarse-grained molecular dynamics simulations, we probe the effects of pH on growth kinetics and aggregate morphology to show that control of the peptide protonation state by pH can be used to modulate the assembly rates, degreemore » of molecular alignment, and resulting morphologies within the self-assembling nanoaggregates. We also quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to show that flow influences cluster alignment and assembly rate during early-stage assembly only at extremely high shear rates. This suggests that observed improvements in optoelectronic properties at experimentally-accessible shear rates are due to the alignment of large aggregates of hundreds of monomers on time scales in excess of hundreds of nanoseconds. Lastly, our work provides new fundamental understanding of the effects of pH and flow to control the morphology and kinetics of early-stage assembly of p-conjugated peptides and lays the groundwork for the rational manipulation of environmental conditions to direct assembly and the attendant emergent optoelectronic properties.« less
Control of the hierarchical assembly of π-conjugated optoelectronic peptides by pH and flow
Mansbach, Rachael A.; Ferguson, Andrew L.
2017-01-01
Self-assembled nanoaggregates of p-conjugated peptides possess optoelectronic properties due to electron delocalization over the conjugated peptide groups that make them attractive candidates for the fabrication of bioelectronic materials. We present a computational and theoretical study to resolve the microscopic effects of pH and flow on the non-equilibrium morphology and kinetics of early-stage assembly of an experimentally-realizable optoelectronic peptide that displays pH triggerable assembly. Employing coarse-grained molecular dynamics simulations, we probe the effects of pH on growth kinetics and aggregate morphology to show that control of the peptide protonation state by pH can be used to modulate the assembly rates, degreemore » of molecular alignment, and resulting morphologies within the self-assembling nanoaggregates. We also quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to show that flow influences cluster alignment and assembly rate during early-stage assembly only at extremely high shear rates. This suggests that observed improvements in optoelectronic properties at experimentally-accessible shear rates are due to the alignment of large aggregates of hundreds of monomers on time scales in excess of hundreds of nanoseconds. Lastly, our work provides new fundamental understanding of the effects of pH and flow to control the morphology and kinetics of early-stage assembly of p-conjugated peptides and lays the groundwork for the rational manipulation of environmental conditions to direct assembly and the attendant emergent optoelectronic properties.« less
Method and apparatus for data decoding and processing
Hunter, Timothy M.; Levy, Arthur J.
1992-01-01
A system and technique is disclosed for automatically controlling the decoding and digitizaiton of an analog tape. The system includes the use of a tape data format which includes a plurality of digital codes recorded on the analog tape in a predetermined proximity to a period of recorded analog data. The codes associated with each period of analog data include digital identification codes prior to the analog data, a start of data code coincident with the analog data recording, and an end of data code subsequent to the associated period of recorded analog data. The formatted tape is decoded in a processing and digitization system which includes an analog tape player coupled to a digitizer to transmit analog information from the recorded tape over at least one channel to the digitizer. At the same time, the tape player is coupled to a decoder and interface system which detects and decodes the digital codes on the tape corresponding to each period of recorded analog data and controls tape movement and digitizer initiation in response to preprogramed modes. A host computer is also coupled to the decoder and interface system and the digitizer and programmed to initiate specific modes of data decoding through the decoder and interface system including the automatic compilation and storage of digital identification information and digitized data for the period of recorded analog data corresponding to the digital identification data, compilation and storage of selected digitized data representing periods of recorded analog data, and compilation of digital identification information related to each of the periods of recorded analog data.
Dopantless Diodes for Efficient Mid/deep UV LEDs and Lasers - Topic 4.2 Optoelectronics
2017-09-12
Week, Santa Barbara, CA, “Polarization hole engineering in deep- ultraviolet nanowire LEDs”, ATM Sarwar, Santino Carnevale, Thomas Kent, Brelon May...Electronic Materials Conference, Santa Barbara, California, “ Engineering the polarization hole doping of graded nanowire ultraviolet LEDs integrated on...Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering Publication Type: Thesis or Dissertation
Preface to Special Issue of ChemSusChem on Perovskite Optoelectronics.
Bolink, Henk J; Mhaisalkar, Subodh G
2017-10-09
This Editorial introduces one of two companion Special Issues on "Halide Perovskites for Optoelectronics Applications" in ChemSusChem and Energy Technology following the ICMAT 2017 Conference in Singapore. More information on the other Special Issue can be found in the Editorial published in Energy Technology. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Stabilizing an optoelectronic microwave oscillator with photonic filters
NASA Technical Reports Server (NTRS)
Strekalov, D.; Aveline, D.; Yu, N.; Thompson, R.; Matsko, A. B.; Maleki, L.
2003-01-01
This paper compares methods of active stabilization of an optoelectronic microwave oscillator (OEO) based on insertion of a source of optical group delay into an OEO loop. The performance of an OEO stabilized with either a high- optical cavity or an atomic cell is analyzed. We show that the elements play a role of narrow-band microwave filters improving an OEO stability.
Ultrathin (<1 μm) Substrate-Free Flexible Photodetector on Quantum Dot-Nanocellulose Paper
Wu, Jingda; Lin, Lih Y.
2017-01-01
Conventional approaches to flexible optoelectronic devices typically require depositing the active materials on external substrates. This is mostly due to the weak bonding between individual molecules or nanocrystals in the active materials, which prevents sustaining a freestanding thin film. Herein we demonstrate an ultrathin freestanding ZnO quantum dot (QD) active layer with nanocellulose structuring, and its corresponding device fabrication method to achieve substrate-free flexible optoelectronic devices. The ultrathin ZnO QD-nanocellulose composite is obtained by hydrogel transfer printing and solvent-exchange processes to overcome the water capillary force which is detrimental to achieving freestanding thin films. We achieved an active nanocellulose paper with ~550 nm thickness, and >91% transparency in the visible wavelength range. The film retains the photoconductive and photoluminescent properties of ZnO QDs and is applied towards substrate-free Schottky photodetector applications. The device has an overall thickness of ~670 nm, which is the thinnest freestanding optoelectronic device to date, to the best of our knowledge, and functions as a self-powered visible-blind ultraviolet photodetector. This platform can be readily applied to other nano materials as well as other optoelectronic device applications. PMID:28266651
Optoelectronic aid for patients with severely restricted visual fields in daylight conditions
NASA Astrophysics Data System (ADS)
Peláez-Coca, María Dolores; Sobrado-Calvo, Paloma; Vargas-Martín, Fernando
2011-11-01
In this study we evaluated the immediate effectiveness of an optoelectronic visual field expander in a sample of subjects with retinitis pigmentosa suffering from a severe peripheral visual field restriction. The aid uses the augmented view concept and provides subjects with visual information from outside their visual field. The tests were carried out in daylight conditions. The optoelectronic aid comprises a FPGA (real-time video processor), a wide-angle mini camera and a transparent see-through head-mounted display. This optoelectronic aid is called SERBA (Sistema Electro-óptico Reconfigurable de Ayuda para Baja Visión). We previously showed that, without compromising residual vision, the SERBA system provides information about objects within an area about three times greater on average than the remaining visual field of the subjects [1]. In this paper we address the effects of the device on mobility under daylight conditions with and without SERBA. The participants were six subjects with retinitis pigmentosa. In this mobility test, better results were obtained when subjects were wearing the SERBA system; specifically, both the number of contacts with low-level obstacles and mobility errors decreased significantly. A longer training period with the device might improve its usefulness.
NASA Astrophysics Data System (ADS)
Romaniuk, Ryszard S.
2012-05-01
This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].
NASA Astrophysics Data System (ADS)
Teng, Yichao; Zhang, Pin; Zhang, Baofu; Chen, Yiwang
2018-02-01
A scheme to realize low-phase-noise frequency-quadrupled microwave generation without any filter is demonstrated. In this scheme, a multimode optoelectronic oscillator is mainly contributed by dual-parallel Mach-Zehnder modulators, fiber, photodetector, and microwave amplifier. The local source signal is modulated by a child MZM (MZMa), which is worked at maximum transmission point. Through properly adjusting the bias voltages of the other child MZM (MZMb) and the parent MZM (MZMc), optical carrier is effectively suppressed and second sidebands are retained, then the survived optical signal is fed back to the photodetector and MZMb to form an optoelectronic hybrid resonator and realize frequency-quadrupled signal generation. Due to the high Q-factor and mode selection effect of the optoelectronic hybrid resonator, compared with the source signal, the generated frequency-quadrupled signal has a lower phase noise. The approach has verified by experiments, and 18, 22, and 26 GHz frequency-quadrupled signal are generated by 4.5, 5.5, and 6.5 GHz local source signals. Compared with 4.5 GHz source signal, the phase noise of generated 18 GHz signal at 10 kHz frequency offset has 26.5 dB reduction.
Digital Economy and Management in Spain.
ERIC Educational Resources Information Center
del Aguila, Ana R.; Padilla, Antonio; Serarols, Christian; Veciana, Jose M.
2003-01-01
Explains the digital economy and its impact on the firm. Highlights include subsectors of the digital economy, including infrastructure; analysis of the digital economy in Spain; analysis of the ICT (information and communication technology) sector in Spain; and electronic commerce through the Internet. (LRW)
Digital signal conditioning for flight test instrumentation
NASA Technical Reports Server (NTRS)
Bever, Glenn A.
1991-01-01
An introduction to digital measurement processes on aircraft is provided. Flight test instrumentation systems are rapidly evolving from analog-intensive to digital intensive systems, including the use of onboard digital computers. The topics include measurements that are digital in origin, as well as sampling, encoding, transmitting, and storing data. Particular emphasis is placed on modern avionic data bus architectures and what to be aware of when extracting data from them. Examples of data extraction techniques are given. Tradeoffs between digital logic families, trends in digital development, and design testing techniques are discussed. An introduction to digital filtering is also covered.
Optoelectronics for electrical and computer engineering students
NASA Astrophysics Data System (ADS)
Chua, Soo-Jin; Jalil, Mansoor
2002-05-01
We describe the contents of an advanced undergraduate course on Optoelectronics at the Department of Electrical and Computer Engineering, National University of Singapore. The emphasis has changed over the years to keep abreast of the development in the field but the broad features remain the same. A multidisciplinary approach is taken, incorporating physics, materials science and engineering concepts to explain the operation of optoelectronic components, and their application in display, communications and consumer electronics. The course comprises of 36 hours of lectures and two experiments, and covers basic radiometry and photometry, photoemitters (LEDs and lasers), photodetectors, and liquid crystal displays. The main aim of the course is to equip the student with the requisite theoretical and practical knowledge for participation in the photonics industry and for postgraduate research for students who are so inclined.
NASA Astrophysics Data System (ADS)
Hayat, Ahmad; Bacou, Alexandre; Rissons, Angelique; Mollier, Jean-Claude
2009-02-01
We present here a 1.55 μm single mode Vertical-Cavity Surface-Emitting Laser (VCSEL) based low phasenoise ring optoelectronic (OEO) oscillator operating at 2.49 GHz for aerospace, avionics and embedded systems applications. Experiments using optical fibers of different lengths have been carried out to obtain optimal results. A phase-noise measurement of -107 dBc/Hz at an offset of 10 kHz from the carrier is obtained. A 3-dB linewidth of 16 Hz for this oscillator signal has been measured. An analysis of lateral mode spacing or Free Spectral Range (FSR) as a function of fiber length has been carried out. A parametric comparison with DFB Laser-based and multimode VCSEL-based opto-electronic oscillators is also presented.
Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo
2017-02-20
We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.
NASA Technical Reports Server (NTRS)
Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.
1995-01-01
A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.
A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode
Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.
2013-01-01
We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452
Bekenstein, Yehonadav; Koscher, Brent A.; Eaton, Samuel W.; ...
2015-12-15
Anisotropic colloidal quasi-two-dimensional nanoplates (NPLs) hold great promise as functional materials due to their combination of low dimensional optoelectronic properties and versatility through colloidal synthesis. Recently, lead-halide perovskites have emerged as important optoelectronic materials with excellent efficiencies in photovoltaic and light-emitting applications. Here we report the synthesis of quantum confined all inorganic cesium lead halide nanoplates in the perovskite crystal structure that are also highly luminescent (PLQY 84%). The controllable self-assembly of nanoplates either into stacked columnar phases or crystallographic-oriented thin-sheet structures is demonstrated. Furthermore, the broad accessible emission range, high native quantum yields, and ease of self-assembly make perovskitemore » NPLs an ideal platform for fundamental optoelectronic studies and the investigation of future devices.« less
Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices
NASA Astrophysics Data System (ADS)
Higurashi, Eiji
2018-04-01
Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.
Wang, Kun; Bießmann, Lorenz; Schwartzkopf, Matthias; Roth, Stephan V; Müller-Buschbaum, Peter
2018-06-20
The self-assembly of amphiphilic diblock copolymers yields the possibility of using them as a template for tailoring the film morphologies of sol-gel chemistry-derived inorganic electron transport materials, such as mesoporous ZnO and TiO 2 . However, additional steps including etching and backfilling are required for the common bulk heterojunction fabrication process when using insulating diblock copolymers. Here, we use the conducting diblock copolymer poly(3-hexylthiophene)- block-poly(ethylene oxide) (P3HT- b-PEO) in which P3HT acts as charge carrier transport material and light absorber, whereas PEO serves as a template for ZnO synthesis. The initial solution is subsequently spray-coated to obtain the hybrid film. Scanning electron microscopy and grazing-incidence small-angle X-ray scattering measurements reveal a significant change in the morphology of the hybrid films during deposition. Optoelectronic properties illustrate the improved charge separation and charge transfer process. Both the amount of the diblock copolymer and the annealing temperature play an important role in tuning the morphology and the optoelectronic properties. Hybrid films being sprayed from a solution with the ratio of ω ZnO , ω P3HT , and ω P3HT- b-PEO of 2:1:1 and subsequent annealing at 80 °C show the most promising morphology combined with an optimal photoluminescence quenching. Thus, the presented simple, reagent- and energy-saving fabrication method provides a promising approach for a large-scale preparation of bulk heterojunction P3HT/ZnO films on flexible substrates.
Novel laser communications transceiver with internal gimbal-less pointing and tracking
NASA Astrophysics Data System (ADS)
Chalfant, Charles H., III; Orlando, Fred J., Jr.; Gregory, Jeff T.; Sulham, Clifford; O'Neal, Chad B.; Taylor, Geoffrey W.; Craig, Douglas M.; Foshee, James J.; Lovett, J. Timothy
2002-12-01
This paper describes a novel laser communications transceiver for use in multi-platform satellite networks or clusters that provides internal pointing and tracking technique allowing static mounting of the transceiver subsystems and minimal use of mechanical stabilization techniques. This eliminates the need for the large, power hungry, mechanical gimbals that are required for laser cross-link pointing, acquisition and tracking. The miniature transceiver is designed for pointing accuracies required for satellite cross-link distances of between 500 meters to 5000 meters. Specifically, the designs are targeting Air Force Research Lab's TechSat21 Program, although alternative transceiver configurations can provide for much greater link distances and other satellite systems. The receiver and transmitter are connected via fiber optic cabling from a separate electronics subsystem containing the optoelectronics PCBs, thereby eliminating active optoelectronic elements from the transceiver's mechanical housing. The internal acquisition and tracking capability is provided by an advanced micro-electro-mechanical system (MEMS) and an optical design that provides a specific field-of-view based on the satellite cluster's interface specifications. The acquisition & tracking control electronics will utilize conventional closed loop tracking techniques. The link optical power budget and optoelectronics designs allow use of transmitter sources with output powers of near 100 mW. The transceiver will provide data rates of up to 2.5 Gbps and operate at either 1310 nm or 1550 nm. In addition to space-based satellite to satellite cross-links, we are planning to develop a broad range of applications including air to air communications between highly mobile airborne platforms and terrestrial fixed point to point communications.
Faster processing of multiple spatially-heterodyned direct to digital holograms
Hanson, Gregory R.; Bingham, Philip R.
2006-10-03
Systems and methods are described for faster processing of multiple spatially-heterodyned direct to digital holograms. A method includes of obtaining multiple spatially-heterodyned holograms, includes: digitally recording a first spatially-heterodyned hologram including spatial heterodyne fringes for Fourier analysis; digitally recording a second spatially-heterodyned hologram including spatial heterodyne fringes for Fourier analysis; Fourier analyzing the recorded first spatially-heterodyned hologram by shifting a first original origin of the recorded first spatially-heterodyned hologram including spatial heterodyne fringes in Fourier space to sit on top of a spatial-heterodyne carrier frequency defined as a first angle between a first reference beam and a first, object beam; applying a first digital filter to cut off signals around the first original origin and performing an inverse Fourier transform on the result; Fourier analyzing the recorded second spatially-heterodyned hologram by shifting a second original origin of the recorded second spatially-heterodyned hologram including spatial heterodyne fringes in Fourier space to sit on top of a spatial-heterodyne carrier frequency defined as a second angle between a second reference beam and a second object beam; and applying a second digital filter to cut off signals around the second original origin and performing an inverse Fourier transform on the result, wherein digitally recording the first spatially-heterodyned hologram is completed before digitally recording the second spatially-heterodyned hologram and a single digital image includes both the first spatially-heterodyned hologram and the second spatially-heterodyned hologram.
Faster processing of multiple spatially-heterodyned direct to digital holograms
Hanson, Gregory R [Clinton, TN; Bingham, Philip R [Knoxville, TN
2008-09-09
Systems and methods are described for faster processing of multiple spatially-heterodyned direct to digital holograms. A method includes of obtaining multiple spatially-heterodyned holograms, includes: digitally recording a first spatially-heterodyned hologram including spatial heterodyne fringes for Fourier analysis; digitally recording a second spatially-heterodyned hologram including spatial heterodyne fringes for Fourier analysis; Fourier analyzing the recorded first spatially-heterodyned hologram by shifting a first original origin of the recorded first spatially-heterodyned hologram including spatial heterodyne fringes in Fourier space to sit on top of a spatial-heterodyne carrier frequency defined as a first angle between a first reference beam and a first object beam; applying a first digital filter to cut off signals around the first original origin and performing an inverse Fourier transform on the result; Fourier analyzing the recorded second spatially-heterodyned hologram by shifting a second original origin of the recorded second spatially-heterodyned hologram including spatial heterodyne fringes in Fourier space to sit on top of a spatial-heterodyne carrier frequency defined as a second angle between a second reference beam and a second object beam; and applying a second digital filter to cut off signals around the second original origin and performing an inverse Fourier transform on the result, wherein digitally recording the first spatially-heterodyned hologram is completed before digitally recording the second spatially-heterodyned hologram and a single digital image includes both the first spatially-heterodyned hologram and the second spatially-heterodyned hologram.
Self-assembled III-V quantum dots: potential for silicon optoelectronics
NASA Technical Reports Server (NTRS)
Leon, R.
2001-01-01
The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.
2016-04-01
DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED PHOTON PAIRS SOURCE FOR ULTRAFAST OPTOELECTRONIC APPLICATIONS NORTHWESTERN UNIVERSITY...REPORT TYPE FINAL TECHNICAL REPORT 3. DATES COVERED (From - To) APRIL 2015 – DEC 2015 4. TITLE AND SUBTITLE DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED...in developing a new source for the production of correlated/entangled photon pairs based on the unique nanolayer properties of topological insulator
NASA Astrophysics Data System (ADS)
1995-04-01
Bell Laboratories has developed the world's first optical information processor. Its core device is a self-excited electrooptical effect apparatus array of symmetric operation. After being developed in the United States, this high-technology device was successfully developed by China's scientists,thus making the fact that China's optoelectronic technology is among the most advanced in the world.
Phased-Array Antenna With Optoelectronic Control Circuits
NASA Technical Reports Server (NTRS)
Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.
1995-01-01
Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.
Müller, Erich
2016-01-01
In the laboratory, optoelectronic stereophotogrammetry is one of the most commonly used motion capture systems; particularly, when position- or orientation-related analyses of human movements are intended. However, for many applied research questions, field experiments are indispensable, and it is not a priori clear whether optoelectronic stereophotogrammetric systems can be expected to perform similarly to in-lab experiments. This study aimed to assess the instrumental errors of kinematic data collected on a ski track using optoelectronic stereophotogrammetry, and to investigate the magnitudes of additional skiing-specific errors and soft tissue/suit artifacts. During a field experiment, the kinematic data of different static and dynamic tasks were captured by the use of 24 infrared-cameras. The distances between three passive markers attached to a rigid bar were stereophotogrammetrically reconstructed and, subsequently, were compared to the manufacturer-specified exact values. While at rest or skiing at low speed, the optoelectronic stereophotogrammetric system’s accuracy and precision for determining inter-marker distances were found to be comparable to those known for in-lab experiments (< 1 mm). However, when measuring a skier’s kinematics under “typical” skiing conditions (i.e., high speeds, inclined/angulated postures and moderate snow spraying), additional errors were found to occur for distances between equipment-fixed markers (total measurement errors: 2.3 ± 2.2 mm). Moreover, for distances between skin-fixed markers, such as the anterior hip markers, additional artifacts were observed (total measurement errors: 8.3 ± 7.1 mm). In summary, these values can be considered sufficient for the detection of meaningful position- or orientation-related differences in alpine skiing. However, it must be emphasized that the use of optoelectronic stereophotogrammetry on a ski track is seriously constrained by limited practical usability, small-sized capture volumes and the occurrence of extensive snow spraying (which results in marker obscuration). The latter limitation possibly might be overcome by the use of more sophisticated cluster-based marker sets. PMID:27560498
Quantum Transport and Optoelectronics in Gapped Graphene Nanodevices
2016-11-30
profile publications, including two papers in Science[1, 2], two in Nature Physics[3, 4], two in Nature Nanotechnology [5, 6], two in Nature Communications...The above results have been published in Science [1]and Nature Nanotechnology [6]. Continuing this line of work, we performed a systematic...constituent layers in van der Waals heterostructures. This work was published in Nature Nanotechnology [5]. Figure 3. Real-space imaging of
NASA Astrophysics Data System (ADS)
Mentzer, Mark A.
Recent advances in the theoretical and practical design and applications of optoelectronic devices and optical circuits are examined in reviews and reports. Topics discussed include system and market considerations, guided-wave phenomena, waveguide devices, processing technology, lithium niobate devices, and coupling problems. Consideration is given to testing and measurement, integrated optics for fiber-optic systems, optical interconnect technology, and optical computing.
Limitations of opto-electronic neural networks
NASA Technical Reports Server (NTRS)
Yu, Jeffrey; Johnston, Alan; Psaltis, Demetri; Brady, David
1989-01-01
Consideration is given to the limitations of implementing neurons, weights, and connections in neural networks for electronics and optics. It is shown that the advantages of each technology are utilized when electronically fabricated neurons are included and a combination of optics and electronics are employed for the weights and connections. The relationship between the types of neural networks being constructed and the choice of technologies to implement the weights and connections is examined.
Argon dye photocoagulator for microsurgery of the interior structure of the eye
NASA Astrophysics Data System (ADS)
Wolinski, Wieslaw L.; Kazmirowski, Antoni; Kesik, Jerzy; Korobowicz, Witold; Spytkowski, Wojciech
1991-08-01
Argon-dye laser photocoagulator for the microsurgery of the interior structure of the eye is described. Some technical specifications like power stability shape of the spots and the dependence of the power on the tissue vs. wavelenght for dye laser are given. Argon-dye photocoagulator was designed and constructed including argon laser tube and dye laser in Institute of Microelectronics and Optoelectronics Technical University of Warsaw.
Analysis And Control System For Automated Welding
NASA Technical Reports Server (NTRS)
Powell, Bradley W.; Burroughs, Ivan A.; Kennedy, Larry Z.; Rodgers, Michael H.; Goode, K. Wayne
1994-01-01
Automated variable-polarity plasma arc (VPPA) welding apparatus operates under electronic supervision by welding analysis and control system. System performs all major monitoring and controlling functions. It acquires, analyzes, and displays weld-quality data in real time and adjusts process parameters accordingly. Also records pertinent data for use in post-weld analysis and documentation of quality. System includes optoelectronic sensors and data processors that provide feedback control of welding process.
Work Function Engineering of Graphene
Garg, Rajni; Dutta, Naba K.; Roy Choudhury, Namita
2014-01-01
Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities. PMID:28344223
Passive and electro-optic polymer photonics and InP electronics integration
NASA Astrophysics Data System (ADS)
Zhang, Z.; Katopodis, V.; Groumas, P.; Konczykowska, A.; Dupuy, J.-.; Beretta, A.; Dede, A.; Miller, E.; Choi, J. H.; Harati, P.; Jorge, F.; Nodjiadjim, V.; Dinu, R.; Cangini, G.; Vannucci, A.; Felipe, D.; Maese-Novo, A.; Keil, N.; Bach, H.-.; Schell, Martin; Avramopoulos, H.; Kouloumentas, Ch.
2015-05-01
Hybrid photonic integration allows individual components to be developed at their best-suited material platforms without sacrificing the overall performance. In the past few years a polymer-enabled hybrid integration platform has been established, comprising 1) EO polymers for constructing low-complexity and low-cost Mach-Zehnder modulators (MZMs) with extremely high modulation bandwidth; 2) InP components for light sources, detectors, and high-speed electronics including MUX drivers and DEMUX circuits; 3) Ceramic (AIN) RF board that links the electronic signals within the package. On this platform, advanced optoelectronic modules have been demonstrated, including serial 100 Gb/s [1] and 2x100 Gb/s [2] optical transmitters, but also 400 Gb/s optoelectronic interfaces for intra-data center networks [3]. To expand the device functionalities to an unprecedented level and at the same time improve the integration compatibility with diversified active / passive photonic components, we have added a passive polymer-based photonic board (polyboard) as the 4th material system. This passive polyboard allows for low-cost fabrication of single-mode waveguide networks, enables fast and convenient integration of various thin-film elements (TFEs) to control the light polarization, and provides efficient thermo-optic elements (TOEs) for wavelength tuning, light amplitude regulation and light-path switching.
Work Function Engineering of Graphene.
Garg, Rajni; Dutta, Naba K; Choudhury, Namita Roy
2014-04-03
Graphene is a two dimensional one atom thick allotrope of carbon that displays unusual crystal structure, electronic characteristics, charge transport behavior, optical clarity, physical & mechanical properties, thermal conductivity and much more that is yet to be discovered. Consequently, it has generated unprecedented excitement in the scientific community; and is of great interest to wide ranging industries including semiconductor, optoelectronics and printed electronics. Graphene is considered to be a next-generation conducting material with a remarkable band-gap structure, and has the potential to replace traditional electrode materials in optoelectronic devices. It has also been identified as one of the most promising materials for post-silicon electronics. For many such applications, modulation of the electrical and optical properties, together with tuning the band gap and the resulting work function of zero band gap graphene are critical in achieving the desired properties and outcome. In understanding the importance, a number of strategies including various functionalization, doping and hybridization have recently been identified and explored to successfully alter the work function of graphene. In this review we primarily highlight the different ways of surface modification, which have been used to specifically modify the band gap of graphene and its work function. This article focuses on the most recent perspectives, current trends and gives some indication of future challenges and possibilities.
The Indonesian Digital Library Network Is Born To Struggle with the Digital Divide.
ERIC Educational Resources Information Center
Fahmi, Ismail
2002-01-01
Describes the Indonesian Digital Library Network that is designed to develop Indonesia as a knowledge-based society. Highlights include the digital divide; problems in a developing country, including Internet accessibility, bandwidth capacity, and network delays; gathering information about national assets; information infrastructure; data…
Wear and breakage monitoring of cutting tools by an optical method: theory
NASA Astrophysics Data System (ADS)
Li, Jianfeng; Zhang, Yongqing; Chen, Fangrong; Tian, Zhiren; Wang, Yao
1996-10-01
An essential part of a machining system in the unmanned flexible manufacturing system, is the ability to automatically change out tools that are worn or damaged. An optoelectronic method for in situ monitoring of the flank wear and breakage of cutting tools is presented. A flank wear estimation system is implemented in a laboratory environment, and its performance is evaluated through turning experiments. The flank wear model parameters that need to be known a priori are determined through several preliminary experiments, or from data available in the literature. The resulting cutting conditions are typical of those used in finishing cutting operations. Through time and amplitude domain analysis of the cutting tool wear states and breakage states, it is found that the original signal digital specificity (sigma) 2x and the self correlation coefficient (rho) (m) can reflect the change regularity of the cutting tool wear and break are determined, but which is not enough due to the complexity of the wear and break procedure of cutting tools. Time series analysis and frequency spectrum analysis will be carried out, which will be described in the later papers.
Designing Semiconductor Heterostructures Using Digitally Accessible Electronic-Structure Data
NASA Astrophysics Data System (ADS)
Shapera, Ethan; Schleife, Andre
Semiconductor sandwich structures, so-called heterojunctions, are at the heart of modern applications with tremendous societal impact: Light-emitting diodes shape the future of lighting and solar cells are promising for renewable energy. However, their computer-based design is hampered by the high cost of electronic structure techniques used to select materials based on alignment of valence and conduction bands and to evaluate excited state properties. We describe, validate, and demonstrate an open source Python framework which rapidly screens existing online databases and user-provided data to find combinations of suitable, previously fabricated materials for optoelectronic applications. The branch point energy aligns valence and conduction bands of different materials, requiring only the bulk density functional theory band structure. We train machine learning algorithms to predict the dielectric constant, electron mobility, and hole mobility with material descriptors available in online databases. Using CdSe and InP as emitting layers for LEDs and CH3NH3PbI3 and nanoparticle PbS as absorbers for solar cells, we demonstrate our broadly applicable, automated method.
Research and development of biochip technologies in Taiwan
NASA Astrophysics Data System (ADS)
Ting, Solomon J.; Chiou, Arthur E. T.
2000-07-01
Recent advancements in several genome-sequencing projects have stimulated an enormous interest in microarray DNA chip technology, especially in the biomedical sciences and pharmaceutical industries. The DNA chips facilitated the miniaturization of conventional nucleic acid hybridizations, by either robotically spotting thousands of library cDNAs or in situ synthesis of high-density oligonucleotides onto solid supports. These innovations have found a wide range of applications in molecular biology, especially in studying gene expression and discovering new genes from the global view of genomic analysis. The research and development of this powerful tool has also received great attentions in Taiwan. In this paper, we report the current progresses of our DNA chip project, along with the current status of other biochip projects in Taiwan, such as protein chip, PCR chip, electrophoresis chip, olfactory chip, etc. The new development of biochip technologies integrates the biotechnology with the semiconductor processing, the micro- electro-mechanical, optoelectronic, and digital signal processing technologies. Most of these biochip technologies utilitze optical detection methods for data acquisition and analysis. The strengths and advantages of different approaches are compared and discussed in this report.
The AAPM/RSNA physics tutorial for residents: digital fluoroscopy.
Pooley, R A; McKinney, J M; Miller, D A
2001-01-01
A digital fluoroscopy system is most commonly configured as a conventional fluoroscopy system (tube, table, image intensifier, video system) in which the analog video signal is converted to and stored as digital data. Other methods of acquiring the digital data (eg, digital or charge-coupled device video and flat-panel detectors) will become more prevalent in the future. Fundamental concepts related to digital imaging in general include binary numbers, pixels, and gray levels. Digital image data allow the convenient use of several image processing techniques including last image hold, gray-scale processing, temporal frame averaging, and edge enhancement. Real-time subtraction of digital fluoroscopic images after injection of contrast material has led to widespread use of digital subtraction angiography (DSA). Additional image processing techniques used with DSA include road mapping, image fade, mask pixel shift, frame summation, and vessel size measurement. Peripheral angiography performed with an automatic moving table allows imaging of the peripheral vasculature with a single contrast material injection.
Graphene-MoS2 Heterojunctions for High-Speed Opto-electronics
NASA Astrophysics Data System (ADS)
Horng, Jason; Wang, Alex; Wang, Danqing; Li, Alexander Shengzhi; Wang, Feng
Heterostructures consisting of two-dimensional materials has drawn significant attention in different research fields owning to their novel electronic states and potential applications. Transmitting information with transition metal dichalcogenides(TMDC) electro-optical modulator switch interconnect is of great interest for technological applications. However, their high-speed applications have been slowed by their intrinsically high resistivity as well as the difficulties in making optimized metal contacts. Here, we present a new strategy by using graphene as a tunable contact to two-dimensional semiconductors to explore possible applications in high-speed opto-electronics. We will present an optical study to provide better understanding of band alignment in graphene/MoS2 heterostructures and a demonstration of high-speed opto-electronics based on these heterostructures. The result shows the new scheme could have potential in both opto-modulators and optical sensing applications.
Wafer bonded virtual substrate and method for forming the same
Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcuberta i [Paris, FR
2007-07-03
A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.