Efficient conceptual design for LED-based pixel light vehicle headlamps

NASA Astrophysics Data System (ADS)

Held, Marcel Philipp; Lachmayer, Roland

2017-12-01

High-resolution vehicle headlamps represent a future-oriented technology that can be used to increase traffic safety and driving comfort. As a further development to the current Matrix Beam headlamps, LED-based pixel light systems enable ideal lighting functions (e.g. projection of navigation information onto the road) to be activated in any given driving scenario. Moreover, compared to other light-modulating elements such as DMDs and LCDs, instantaneous LED on-off toggling provides a decisive advantage in efficiency. To generate highly individualized light distributions for automotive applications, a number of approaches using an LED array may be pursued. One approach is to vary the LED density in the array so as to output the desired light distribution. Another notable approach makes use of an equidistant arrangement of the individual LEDs together with distortion optics to formulate the desired light distribution. The optical system adjusts the light distribution in a manner that improves resolution and increases luminous intensity of the desired area. An efficient setup for pixel generation calls for one lens per LED. Taking into consideration the limited space requirements of the system, this implies that the luminous flux, efficiency and resolution image parameters are primarily controlled by the lens dimensions. In this paper a concept for an equidistant LED array arrangement utilizing distortion optics is presented. The paper is divided into two parts. The first part discusses the influence of lens geometry on the system efficiency whereas the second part investigates the correlation between resolution and luminous flux based on the lens dimensions.

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

A charge inverter for III-nitride light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn; Zhang, Yonghui; Bi, Wengang, E-mail: zh.zhang@hebut.edu.cn, E-mail: wbi@hebut.edu.cn, E-mail: volkan@stanfordalumni.org, E-mail: sunxw@sustc.edu.cn

In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO{sub 2} insulator layer on the p{sup +}-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p{sup +}-GaN and SiO{sub 2} insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constantmore » of the thin SiO{sub 2} layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p{sup +}-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm{sup 2} LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.« less

Cost and energy-efficient (LED, induction and plasma) roadway lighting.

DOT National Transportation Integrated Search

2013-11-01

There is an increasing interest in using new lighting technologies such as light emitting diode (LED), Induction, and Plasma light sources : in roadway lighting. The most commonly claimed benefits of the new lighting systems include increased reliabi...

Dependencies of surface plasmon coupling effects on the p-GaN thickness of a thin-p-type light-emitting diode.

PubMed

Su, Chia-Ying; Lin, Chun-Han; Yao, Yu-Feng; Liu, Wei-Heng; Su, Ming-Yen; Chiang, Hsin-Chun; Tsai, Meng-Che; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2017-09-04

The high performance of a light-emitting diode (LED) with the total p-type thickness as small as 38 nm is demonstrated. By increasing the Mg doping concentration in the p-AlGaN electron blocking layer through an Mg pre-flow process, the hole injection efficiency can be significantly enhanced. Based on this technique, the high LED performance can be maintained when the p-type layer thickness is significantly reduced. Then, the surface plasmon coupling effects, including the enhancement of internal quantum efficiency, increase in output intensity, reduction of efficiency droop, and increase of modulation bandwidth, among the thin p-type LED samples of different p-type thicknesses that are compared. These advantageous effects are stronger as the p-type layer becomes thinner. However, the dependencies of these effects on p-type layer thickness are different. With a circular mesa size of 10 μm in radius, through surface plasmon coupling, we achieve the record-high modulation bandwidth of 625.6 MHz among c-plane GaN-based LEDs.

Emission rate and internal quantum efficiency enhancement in different geometrical shapes of GaN LED

NASA Astrophysics Data System (ADS)

Rashid, S.; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Halim, N. S. A. Abdul; Ramli, M. M.; Shahimin, M. M.

2017-09-01

This work is based on the development of light emitting diode (LED) using different geometry of top surface on GaN p-n junction structure. Three types of LED chips are designed with different top surface to differ whether p-type layer or p contact plays an important role in improving its efficiency. The voltage applied ranges from 0V to 4V. Current-voltage characteristic for all three samples are obtained and analyzed. The results show that dome shaped of p-type layer operating at 4V increases the emission rate and internal quantum efficiency up to 70%, which is two times higher than basic cylindrically LED chip. Moreover, this new design effectively solved the higher forward voltage problem of the usual curve surface of p-contact GaN LED.

(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bai, J., E-mail: j.bai@sheffield.ac.uk; Xu, B.; Guzman, F. G.

2015-12-28

We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linearmore » increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.« less

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Kao, Yu-Jui; Yang, Ya-Yu; Sheu, Jinn-Kong

2012-02-27

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

PubMed

Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

2013-05-01

In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Efficient Visible Light Communication Transmitters Based on Switching-Mode dc-dc Converters.

PubMed

Rodríguez, Juan; Lamar, Diego G; Aller, Daniel G; Miaja, Pablo F; Sebastián, Javier

2018-04-07

Visible light communication (VLC) based on solid-state lighting (SSL) is a promising option either to supplement or to substitute existing radio frequency (RF) wireless communication in indoor environments. VLC systems take advantage of the fast modulation of the visible light that light emitting diodes (LEDs) enable. The switching-mode dc-to-dc converter (SMC dc-dc ) must be the cornerstone of the LED driver of VLC transmitters in order to incorporate the communication functionality into LED lighting, keeping high power efficiency. However, the new requirements related to the communication, especially the high bandwidth that the LED driver must achieve, converts the design of the SMC dc-dc into a very challenging task. In this work, three different methods for achieving such a high bandwidth with an SMC dc-dc are presented: increasing the order of the SMC dc-dc output filter, increasing the number of voltage inputs, and increasing the number of phases. These three strategies are combinable and the optimum design depends on the particular VLC application, which determines the requirements of the VLC transmitter. As an example, an experimental VLC transmitter based on a two-phase buck converter with a fourth-order output filter will demonstrate that a bandwidth of several hundred kilohertz (kHz) can be achieved with output power levels close to 10 W and power efficiencies between 85% and 90%. In conclusion, the design strategy presented allows us to incorporate VLC into SSL, achieving high bit rates without damaging the power efficiency of LED lighting.

Efficient Visible Light Communication Transmitters Based on Switching-Mode dc-dc Converters

PubMed Central

2018-01-01

Visible light communication (VLC) based on solid-state lighting (SSL) is a promising option either to supplement or to substitute existing radio frequency (RF) wireless communication in indoor environments. VLC systems take advantage of the fast modulation of the visible light that light emitting diodes (LEDs) enable. The switching-mode dc-to-dc converter (SMCdc-dc) must be the cornerstone of the LED driver of VLC transmitters in order to incorporate the communication functionality into LED lighting, keeping high power efficiency. However, the new requirements related to the communication, especially the high bandwidth that the LED driver must achieve, converts the design of the SMCdc-dc into a very challenging task. In this work, three different methods for achieving such a high bandwidth with an SMCdc-dc are presented: increasing the order of the SMCdc-dc output filter, increasing the number of voltage inputs, and increasing the number of phases. These three strategies are combinable and the optimum design depends on the particular VLC application, which determines the requirements of the VLC transmitter. As an example, an experimental VLC transmitter based on a two-phase buck converter with a fourth-order output filter will demonstrate that a bandwidth of several hundred kilohertz (kHz) can be achieved with output power levels close to 10 W and power efficiencies between 85% and 90%. In conclusion, the design strategy presented allows us to incorporate VLC into SSL, achieving high bit rates without damaging the power efficiency of LED lighting. PMID:29642455

Improved InGaN LED System Efficacy and Cost via Droop Reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wildeson, Isaac

Efficiency droop is a non-thermal process intrinsic to indium gallium nitride light emitting diodes (LEDs) in which the external quantum efficiency (EQE) decreases with increasing drive current density. Mitigating droop would allow one to reduce the size of LEDs driven at a given current or to drive LEDs of given size at higher current while maintaining high efficiencies. In other words, droop mitigation can lead to significant gains in light output per dollar and/or light output per watt of input power. This project set an EQE improvement goal at high drive current density which was to be attained by improvingmore » the LED active region design and growth process following a droop mitigation strategy. The interactions between LED active region design parameters and efficiency droop were studied by modeling and experiments. The crystal defects that tend to form in more complex LED designs intended to mitigate droop were studied with advanced characterization methods that provided insight into the structural and electronic properties of the material. This insight was applied to improve the epitaxy process both in terms of active region design and optimization of growth parameters. The final project goals were achieved on schedule and an epitaxy process leading to LEDs with EQE exceeding the project target was demonstrated.« less

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods.

PubMed

Bano, N; Hussain, I; Sawaf, S; Alshammari, Abeer; Saleemi, F

2017-06-16

The size of ZnO nanorods (NRs) plays an important role in tuning the external quantum efficiency (EQE) and quality of light generated by white light emitting diodes (LEDs). In this work, we report on the enhancement of EQE and the quality of ZnO NR-based hetrojunction white LEDs fabricated on a p-GaN substrate using a low temperature solution method. Cathodoluminescence spectra demonstrate that ultraviolet (UV) emission decreases and visible deep band emission increases with an increase in the length of the ZnO NRs. The UV emission could be internally reabsorbed by the ZnO NR excitation, thus enhancing the emission intensity of the visible deep band. Photocurrent measurements validated the fact that the EQE depends on the size of ZnO NRs, increasing by 87% with an increase in the length of the ZnO NRs. Furthermore, the quality of white light was measured and clearly indicated an increase in the color rendering indices of the LEDs with an increase in the length of the ZnO NRs, confirming that the quality of light generated by LEDs can be tuned by varying the length of the ZnO NRs. These results suggest that the EQE and visible deep band emission from n-ZnONRs/p-GaN heterojunction LEDs can be effectively controlled by adjusting the length of the ZnO NRs, which can be useful for realizing tunable white LEDs.

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods

NASA Astrophysics Data System (ADS)

Bano, N.; Hussain, I.; Sawaf, S.; Alshammari, Abeer; Saleemi, F.

2017-06-01

The size of ZnO nanorods (NRs) plays an important role in tuning the external quantum efficiency (EQE) and quality of light generated by white light emitting diodes (LEDs). In this work, we report on the enhancement of EQE and the quality of ZnO NR-based hetrojunction white LEDs fabricated on a p-GaN substrate using a low temperature solution method. Cathodoluminescence spectra demonstrate that ultraviolet (UV) emission decreases and visible deep band emission increases with an increase in the length of the ZnO NRs. The UV emission could be internally reabsorbed by the ZnO NR excitation, thus enhancing the emission intensity of the visible deep band. Photocurrent measurements validated the fact that the EQE depends on the size of ZnO NRs, increasing by 87% with an increase in the length of the ZnO NRs. Furthermore, the quality of white light was measured and clearly indicated an increase in the color rendering indices of the LEDs with an increase in the length of the ZnO NRs, confirming that the quality of light generated by LEDs can be tuned by varying the length of the ZnO NRs. These results suggest that the EQE and visible deep band emission from n-ZnONRs/p-GaN heterojunction LEDs can be effectively controlled by adjusting the length of the ZnO NRs, which can be useful for realizing tunable white LEDs.

Elimination of resistive losses in large-area LEDs by new diffusion-driven devices

NASA Astrophysics Data System (ADS)

Kivisaari, Pyry; Kim, Iurii; Suihkonen, Sami; Oksanen, Jani

2017-02-01

High-power operation of conventional GaN-based light-emitting diodes (LEDs) is severely limited by current crowding, which increases the bias voltage of the LED, concentrates light emission close to the p-type contact edge, and aggravates the efficiency droop. Fabricating LEDs on thick n-GaN substrates alleviates current crowding but requires the use of expensive bulk GaN substrates and fairly large n-contacts, which take away a large part of the active region (AR). In this work, we demonstrate through comparative simulations how the recently introduced diffusion-driven charge transport (DDCT) concept can be used to realize lateral heterojunction (LHJ) structures, which eliminate most of the lateral current crowding. Specifically in this work, we analyze how using a single-side graded AR can both facilitate electron and hole diffusion in DDCT and increase the effective AR thickness. Our simulations show that the increased effective AR thickness allows a substantial reduction in the efficiency droop at large currents, and that unlike conventional 2D LEDs, the LHJ structure shows practically no added efficiency loss or differential resistance due to current crowding. Furthermore, as both electrons and holes enter the AR from the same side without any notable potential barriers in the LHJ structure, the LHJ structure shows an additional wall-plug efficiency gain over the conventional structures under comparison. This injection from the same side is expected to be even more interesting in multiple quantum well structures, where carriers typically need to surpass several potential barriers in conventional LEDs before recombining. In addition to simulations, we also demonstrate selective-area growth of a finger structure suitable for operation as an LHJ device with 2µm distance between n- and p-GaN regions.

Trade-off between bandwidth and efficiency in semipolar (20 2 ¯ 1 ¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Nami, M.; Oh, S. H.; DenBaars, S. P.; Feezell, D.

2018-05-01

InGaN/GaN light-emitting diodes (LEDs) with large modulation bandwidths are desirable for visible-light communication. Along with modulation speed, the consideration of the internal quantum efficiency (IQE) under operating conditions is also important. Here, we report the modulation characteristics of semipolar (20 2 ¯ 1 ¯ ) InGaN/GaN (LEDs) with single-quantum well (SQW) and multiple-quantum-well (MQW) active regions grown on free-standing semipolar GaN substrates with peak internal quantum efficiencies (IQEs) of 0.93 and 0.73, respectively. The MQW LEDs exhibit on average about 40-80% higher modulation bandwidth, reaching 1.5 GHz at 13 kA/cm2, but about 27% lower peak IQE than the SQW LEDs. We extract the differential carrier lifetimes (DLTs), RC parasitics, and carrier escape lifetimes and discuss their role in the bandwidth and IQE characteristics. A coulomb-enhanced capture process is shown to rapidly reduce the DLT of the MQW LED at high current densities. Auger recombination is also shown to play little role in increasing the speed of the LEDs. Finally, we investigate the trade-offs between the bandwidth and efficiency and introduce the bandwidth-IQE product as a potential figure of merit for optimizing speed and efficiency in InGaN/GaN LEDs.

Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yong Deok; Oh, Seung Kyu; Park, Min Joo

Highlights: • A nitrogen implanted current-blocking layer was successfully demonstrated. • Light-extraction efficiency and radiant intensity was increased by more than 20%. • Ion implantation was successfully implemented in GaN based light-emitting diodes. - Abstract: GaN-based light emitting diodes (LEDs) with a nitrogen implanted current-blocking layer (CBL) were successfully demonstrated for improving the light extraction efficiency (LEE) and radiant intensity. The LEE and radiant intensity of the LEDs with a shallow implanted CBL with nitrogen was greatly increased by more than 20% compared to that of a conventional LED without the CBL due to an increase in the effective currentmore » path, which reduces light absorption at the thick p-pad electrode. Meanwhile, deep implanted CBL with a nitrogen resulted in deterioration of the LEE and radiant intensity because of formation of crystal damage, followed by absorption of the light generated at the multi-quantum well(MQW). These results clearly suggest that ion implantation method, which is widely applied in the fabrication of Si based devices, can be successfully implemented in the fabrication of GaN based LEDs by optimization of implanted depth.« less

Biologically inspired LED lens from cuticular nanostructures of firefly lantern

PubMed Central

Kim, Jae-Jun; Lee, Youngseop; Kim, Ha Gon; Choi, Ki-Ju; Kweon, Hee-Seok; Park, Seongchong; Jeong, Ki-Hun

2012-01-01

Cuticular nanostructures found in insects effectively manage light for light polarization, structural color, or optical index matching within an ultrathin natural scale. These nanostructures are mainly dedicated to manage incoming light and recently inspired many imaging and display applications. A bioluminescent organ, such as a firefly lantern, helps to out-couple light from the body in a highly efficient fashion for delivering strong optical signals in sexual communication. However, the cuticular nanostructures, except the light-producing reactions, have not been well investigated for physical principles and engineering biomimetics. Here we report a unique observation of high-transmission nanostructures on a firefly lantern and its biological inspiration for highly efficient LED illumination. Both numerical and experimental results clearly reveal high transmission through the nanostructures inspired from the lantern cuticle. The nanostructures on an LED lens surface were fabricated by using a large-area nanotemplating and reconfigurable nanomolding with heat-induced shear thinning. The biologically inspired LED lens, distinct from a smooth surface lens, substantially increases light transmission over visible ranges, comparable to conventional antireflection coating. This biological inspiration can offer new opportunities for increasing the light extraction efficiency of high-power LED packages. PMID:23112185

Novel high refractive index, thermally conductive additives for high brightness white LEDs

NASA Astrophysics Data System (ADS)

Hutchison, Richard Stephen

In prior works the inclusion of nanoparticle fillers has typically been shown to increase the thermal conductivity or refractive index of polymer nanocomposites separately. High refractive index zirconia nanoparticles have already proved their merit in increasing the optical efficiency of encapsulated light emitting diodes. However, the thermal properties of zirconia-silicone nanocomposites have yet to be investigated. While phosphor-converted light emitting diodes are at the forefront of solid-state lighting technologies for producing white light, they are plagued by efficiency losses due to excessive heating at the semiconductor die and in and around the phosphor particles, as well as photon scattering losses in the phosphor layer. It would then be of great interest if the high refractive index nanoparticles were found to both be capable of increasing the refractive index, thus reducing the optical scattering, and also the thermal conductivity, channeling more heat away from the LED die and phosphors, mitigating efficiency losses from heat. Thermal conductance measurements on unfilled and nanoparticle loaded silicone samples were conducted to quantify the effect of the zirconia nanoparticle loading on silicone nanocomposite thermal conductivity. An increase in thermal conductivity from 0.27 W/mK to 0.49 W/mK from base silicone to silicone with 33.5 wt% zirconia nanoparticles was observed. This trend closely mirrored a basic rule of mixtures prediction, implying a further enhancement in thermal conductivity could be achieved at higher nanoparticle loadings. The optical properties of transparency and light extraction efficiency of these composites were also investigated. While overall the zirconia nanocomposite showed good transparency, there was a slight decrease at the shorter wavelengths with increasing zirconia content. For longer wavelength LEDs, such as green or red, this might not matter, but phosphor-converted white LEDs use a blue LED as the photon source making this decrease in transparency important to note. This decrease in transparency may be partially or wholly why a decrease in light extraction efficiency is observed at the 33.5 wt% zirconia loading fraction used for the LED samples. Preliminary aging studies under full and enhanced power conditions were conducted over 500 and 1000 hours to observe any changes in the spectral output power and phosphor conversion efficiency of the LEDs due to inclusion of the zirconia nanoparticles. It was found that the nanoparticles have no negative effect on the aging properties but also show no enhancement in relative output power over a preliminary aging study. However, their inclusion did result in increased phosphor conversion efficiency over the use of an unfilled silicone. This increase was seen as around a 10% or greater enhancement for the nanocomposite over that for the base Sylgard silicone. These experiments were originally conducted on the commercially available methylated Sylgard 184 silicone and then again on a higher refractive index methyl-phenyl silicone from Momentive. While some of the results from the Momentive silicone were perplexing, it was seen that, even without the inclusion of nanoparticles, the Momentive silicone had a higher refractive index, better aging properties, and a higher phosphor conversion efficiency over 500 hours under enhanced power conditions, warranting further studies into methyl-phenyl silicone nanocomposites.

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

PubMed Central

2014-01-01

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good current spreading effect. The voltage bias at 20 mA dropped about 0.15 V, and the optical power increased about 10% compared with the LEDs without SACNTs. PMID:24712527

Efficiency improvement of GaN-on-silicon thin-film light-emitting diodes with optimized via-like n-electrodes

NASA Astrophysics Data System (ADS)

Feng, Bo; Deng, Biao; Fu, Yi; Liu, Le Gong; Li, Zeng Cheng; Feng, Mei Xin; Zhao, Han Min; Sun, Qian

2017-07-01

This work reports a significant improvement in efficiency by optimizing the via-like n-electrode architecture design of a GaN-based thin-film LED grown on a 6-inch silicon substrate. The external quantum efficiency of the as-fabricated 1.1 mm × 1.1 mm via-thin-film LED chip at 350 mA was increased by 11.3% compared to that of a vertical thin-film LED chip with a conventional finger-like n-electrode. Detailed analysis of encapsulation gain and false color emission patterns illustrated that the significantly improved LED performance was due to enhanced light extraction efficiency and more uniform current spreading, both of which can be attributed to the optimized via-thin-film chip structure. Minimizing the light loss at the periphery of the Ag mirror was demonstrated to be a critical factor for improving light extraction, rather than simply replacing the finger-like n-electrodes with via-like ones. After encapsulation, the median blue lamp power and the wall-plug efficiency of the via-thin-film LED at 350 mA reached 659 mW and 63.7%, respectively.

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jun Hyuk; Lee, Jong Won; Kim, Dong Yeong

The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specificmore » dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.« less

Spectral effects of light-emitting diodes on plant growth and development: The importance of green and blue light

NASA Astrophysics Data System (ADS)

Cope, K. R.; Bugbee, B.

2011-12-01

Light-emitting diodes (LEDs) are an emerging technology for plant growth lighting. Due to their narrow spectral output, colored LEDs provide many options for studying the spectral effects of light on plants. Early on, efficient red LEDs were the primary focus of photobiological research; however, subsequent studies have shown that normal plant growth and development cannot be achieved under red light without blue light supplementation. More recent studies have shown that red and blue (RB) LEDs supplemented with green light increase plant dry mass. This is because green light transmits more effectively through the leaf canopy than red and blue light, thus illuminating lower plant leaves and increasing whole-plant photosynthesis. Red, green and blue (RGB) light can be provided by either a conventional white light source (such as fluorescent lights), a combination of RGB LEDs, or from recently developed white LEDs. White LEDs exceed the efficiency of fluorescent lights and have a comparable broad spectrum. As such, they have the potential to replace fluorescent lighting for growth-chamber-based crop production both on Earth and in space. Here we report the results of studies on the effects of three white LED types (warm, neutral and cool) on plant growth and development compared to combinations of RB and RGB LEDs. Plants were grown under two constant light intensities (200 and 500 μmol m-2 s-1). Temperature, environmental conditions and root-zone environment were uniformly maintained across treatments. Phytochrome photoequilbria and red/far-red ratios were similar among treatments and were comparable to conventional fluorescent lights. Blue light had a significant effect on both plant growth (dry mass gain) and development (dry mass partitioning). An increase in the absolute amount (μmol m-2 s-1) of blue light from 0-80 μmol m-2 s-1 resulted in a decrease in stem elongation, independent of the light intensity. However, an increase in the relative amount (%) of blue light caused a decrease in specific leaf area (leaf area per unit leaf mass). As the relative amount of blue light increased, chlorophyll concentration per unit leaf area increased, but chlorophyll concentration per unit leaf mass remained constant. The relative amount of blue light increased total dry mass in some species while it remained constant in others. An increase in the fraction of green light increased dry mass in radish. Overall, white LEDs provided a more uniform spectral distribution, reduced stem elongation and leaf area, and maintained or increased dry mass as compared to RB and RGB LEDs. Cool white LEDs are more electrically efficient than the other two white LEDs and have sufficient blue light for normal plant growth and development at both high and low light intensities. Compared to sunlight, cool white LEDs are perhaps deficient in red light and may therefore benefit from supplementation with red LEDs. Future studies will be conducted to test this hypothesis. These results have significant implication for LADA growth chambers which are currently used for vegetable production on the International Space Station.

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

Does multi-functionality affect technical efficiency? A non-parametric analysis of the Scottish dairy industry.

PubMed

Barnes, A P

2006-09-01

Recent policy changes within the Common Agricultural Policy have led to a shift from a solely production-led agriculture towards the promotion of multi-functionality. Conversely, the removal of production-led supports would indicate that an increased concentration on production efficiencies would seem a critical strategy for a country's future competitiveness. This paper explores the relationship between the 'multi-functional' farming attitude desired by policy makers and its effect on technical efficiency within Scottish dairy farming. Technical efficiency scores are calculated by applying the non-parametric data envelopment analysis technique and then measured against causes of inefficiency. Amongst these explanatory factors is a constructed score of multi-functionality. This research finds that, amongst other factors, a multi-functional attitude has a significant positive effect on technical efficiency. Consequently, this seems to validate the promotion of a multi-functional approach to farming currently being championed by policy-makers.

Evaluation of Metal Halide, Plasma, and LED Lighting Technologies for a Hydrogen Fuel Cell Mobile Light (H 2 LT)

DOE PAGES

Miller, L. B.; Donohoe, S. P.; Jones, M. H.; ...

2015-04-22

This article reports on the testing and comparison of a prototype hydrogen fuel cell light tower (H2LT) and a conventional diesel-powered metal halide light trailer for use in road maintenance and construction activities. The prototype was originally outfitted with plasma lights and then with light-emitting diode (LED) luminaires. Light output and distribution, lighting energy efficiency (i.e., efficacy), power source thermal efficiency, and fuel costs are compared. The metal halide luminaires have 2.2 and 3.1 times more light output than the plasma and LED luminaires, respectively, but they require more power/lumen to provide that output. The LED luminaires have 1.6 timesmore » better light efficacy than either the metal halide or plasma luminaires. The light uniformity ratios produced by the plasma and LED towers are acceptable. The fuel cell thermal efficiency at the power required to operate the plasma lights is 48%, significantly higher than the diesel generator efficiency of 23% when operating the metal halide lights. Due to the increased efficiency of the fuel cell and the LED lighting, the fuel cost per lumen-hour of the H2LT is 62% of the metal halide diesel light tower assuming a kilogram of hydrogen is twice the cost of a gallon of diesel fuel.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

PubMed

Ryu, Han-Youl

2014-02-04

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

PubMed Central

2014-01-01

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

LED lighting increases the ecological impact of light pollution irrespective of color temperature.

PubMed

Pawson, S M; Bader, M K-F

Recognition of the extent and magnitude of night-time light pollution impacts on natural ecosystems is increasing, with pervasive effects observed in both nocturnal and diurnal species. Municipal and industrial lighting is on the cusp of a step change where energy-efficient lighting technology is driving a shift from “yellow” high-pressure sodium vapor lamps (HPS) to new “white” light-emitting diodes (LEDs). We hypothesized that white LEDs would be more attractive and thus have greater ecological impacts than HPS due to the peak UV-green-blue visual sensitivity of nocturnal invertebrates. Our results support this hypothesis; on average LED light traps captured 48% more insects than were captured with light traps fitted with HPS lamps, and this effect was dependent on air temperature (significant light × air temperature interaction). We found no evidence that manipulating the color temperature of white LEDs would minimize the ecological impacts of the adoption of white LED lights. As such, large-scale adoption of energy-efficient white LED lighting for municipal and industrial use may exacerbate ecological impacts and potentially amplify phytosanitary pest infestations. Our findings highlight the urgent need for collaborative research between ecologists and electrical engineers to ensure that future developments in LED technology minimize their potential ecological effects.

Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs.

PubMed

Soh, C B; Wang, B; Chua, S J; Lin, Vivian K X; Tan, Rayson J N; Tripathy, S

2008-10-08

We report on the fabrication of a nano-cone structured p-GaN surface for enhanced light extraction from tunable wavelength light emitting diodes (LEDs). Prior to p-contact metallization, self-assembled colloidal particles are deposited and used as a mask for plasma etching to create nano-cone structures on the p-GaN layer of LEDs. A well-defined periodic nano-cone array, with an average cone diameter of 300 nm and height of 150 nm, is generated on the p-GaN surface. The photoluminescence emission intensity recorded from the regions with the nano-cone array is increased by two times as compared to LEDs without surface patterning. The light output power from the LEDs with surface nano-cones shows significantly higher electroluminescence intensity at an injection current of 70 mA. This is due to the internal multiple scattering of light from the nano-cone sidewalls. Furthermore, we have shown that with an incorporation of InGaN nanostructures in the quantum well, the wavelength of these surface-patterned LEDs can be tuned from 517 to 488 nm with an increase in the injection current. This methodology may serve as a practical approach to increase the light extraction efficiency from wavelength tunable LEDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, L. B.; Donohoe, S. P.; Jones, M. H.

This article reports on the testing and comparison of a prototype hydrogen fuel cell light tower (H2LT) and a conventional diesel-powered metal halide light trailer for use in road maintenance and construction activities. The prototype was originally outfitted with plasma lights and then with light-emitting diode (LED) luminaires. Light output and distribution, lighting energy efficiency (i.e., efficacy), power source thermal efficiency, and fuel costs are compared. The metal halide luminaires have 2.2 and 3.1 times more light output than the plasma and LED luminaires, respectively, but they require more power/lumen to provide that output. The LED luminaires have 1.6 timesmore » better light efficacy than either the metal halide or plasma luminaires. The light uniformity ratios produced by the plasma and LED towers are acceptable. The fuel cell thermal efficiency at the power required to operate the plasma lights is 48%, significantly higher than the diesel generator efficiency of 23% when operating the metal halide lights. Due to the increased efficiency of the fuel cell and the LED lighting, the fuel cost per lumen-hour of the H2LT is 62% of the metal halide diesel light tower assuming a kilogram of hydrogen is twice the cost of a gallon of diesel fuel.« less

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

NASA Astrophysics Data System (ADS)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-05-01

The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control

NASA Astrophysics Data System (ADS)

Tsai, Sheng-Chieh; Li, Ming-Jui; Fang, Hsin-Chiao; Tu, Chia-Hao; Liu, Chuan-Pu

2018-05-01

A facile method for fabricating blue light-emitting diodes (B-LEDs) with small embedded quantum dots (QDs) and enhanced light emission is demonstrated by tuning the temperature of the growing GaN capping layer to eliminate V-defects. As the growth temperature increases from 770 °C to 840 °C, not only does the density of the V-defects reduce from 4.12 ∗ 108 #/cm2 nm to zero on a smooth surface, but the QDs also get smaller. Therefore, the growth mechanism of smaller QDs assisted by elimination of V-defects is discussed. Photoluminescence and electroluminescence results show that smaller embedded QDs can improve recombination efficiency, and thus achieve higher peak intensity with smaller peak broadening. Accordingly, the external quantum efficiency of the B-LEDs with smaller QDs is enhanced, leading to a 6.8% increase in light output power in lamp-form package LEDs.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

NASA Astrophysics Data System (ADS)

Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

2013-03-01

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

2017-12-01

A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes.

PubMed

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-06

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

PubMed Central

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments. PMID:28059148

Efficiency of Australian Technical and Further Education Providers

ERIC Educational Resources Information Center

Fieger, Peter; Villano, Renato; Cooksey, Ray

2016-01-01

Budgetary constraints on the public purse have led Australian Federal and State governments to focus increasingly on the efficiency of public institutions, including Technical and Further Education (TAFE) institutes. In this study, we define efficiency as the relationship between financial and administrative inputs and educational outputs. We…

Effects of melamine formaldehyde resin and CaCO3 diffuser-loaded encapsulation on correlated color temperature uniformity of phosphor-converted LEDs.

PubMed

Yang, Liang; Lv, Zhicheng; Jiaojiao, Yuan; Liu, Sheng

2013-08-01

Phosphor-free dispensing is the most widely used LED packaging method, but this method results in poor quality in angular CCT uniformity. This study proposes a diffuser-loaded encapsulation to solve the problem; the effects of melamine formaldehyde (MF) resin and CaCO3 loaded encapsulation on correlated color temperature (CCT) uniformity and luminous efficiency reduction of the phosphor-converted LEDs are investigated. Results reveal that MF resin loaded encapsulation has better light diffusion performance compared to MF resin loaded encapsulation at the same diffuser concentration, but CaCO3 loaded encapsulation has better luminous efficiency maintenance. The improvements in angular color uniformity for the LEDs emitting with MF resin and CaCO3 loaded encapsulation can be explained by the increase in photon scattering. The utility of this low cost and controllable mineral diffuser packaging method provides a practical approach for enhancing the angular color uniformity of LEDs. The diffuser mass ratio of 1% MF resin or 10% CaCO3 is the optimum condition to obtain low angular CCT variance and high luminous efficiency.

Controlling surface property of K2SiF6:Mn4+ for improvement of lighting-emitting diode reliability

NASA Astrophysics Data System (ADS)

Kim, Juseong; Jang, Inseok; Song, Gwang Yeom; Kim, Wan-Ho; Jeon, Sie-Wook; Kim, Jae-Pil

2018-05-01

The surface property of moisture-sensitive K2SiF6:Mn4+ (KSF) as a red-emitting phosphor was controlled through dry-type surface modification in order to improve the photo-performance and reliability of lighting-emitting diode (LED). The phosphor surface was modified with silane coupling agents having different carbon chain length by plasma-assisted method. Comparing between as-prepared and modified KSF, water-resistance and photo-emission efficiency were enhanced due to the formation of hydrophobic shell and the elimination of surface quenching sites. Moreover, the dispersibility of phosphor was increased as increasing the carbon chain length of silane because the interfacial affinity between phosphor and encapsulant was improved. After fabricating LED device, the enhancement of photo-performance and long-term reliability could be successfully achieved in LED device with modified phosphor. It is attributed to that the degradation of phosphor efficiency by moisture was suppressed and heat dissipation in LED PKG was improved through the surface modification.

AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Chou, Ying-Hung; Yan, Jheng-Tai; Lee, Hsin-Ying; Lee, Ching-Ting

2008-02-01

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pozina, Galia; Ciechonski, Rafal; Bi, Zhaoxia

2015-12-21

Today's energy saving solutions for general illumination rely on efficient white light emitting diodes (LEDs). However, the output efficiency droop experienced in InGaN based LEDs with increasing current injection is a serious limitation factor for future development of bright white LEDs. We show using cathodoluminescence (CL) spatial mapping at different electron beam currents that threading dislocations are active as nonradiative recombination centers only at high injection conditions. At low current, the dislocations are inactive in carrier recombination due to local potentials, but these potentials are screened by carriers at higher injection levels. In CL images, this corresponds to the increasemore » of the dark contrast around dislocations with the injection (excitation) density and can be linked with droop related to the threading dislocations. Our data indicate that reduction of droop in the future efficient white LED can be achieved via a drastic reduction of the dislocation density by using, for example, bulk native substrates.« less

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.

PubMed

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-19

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

NASA Astrophysics Data System (ADS)

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-01

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

2015-05-25

We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

Light use efficiency for vegetables production in protected and indoor environments

NASA Astrophysics Data System (ADS)

Cocetta, Giacomo; Casciani, Daria; Bulgari, Roberta; Musante, Fulvio; Kołton, Anna; Rossi, Maurizio; Ferrante, Antonio

2017-01-01

In recent years, there is a growing interest for vegetables production in indoor or disadvantaged climatic zones by using greenhouses. The main problem of crop growing indoor or in environment with limited light availability is the correct choice of light source and the quality of lighting spectrum. In greenhouse and indoor cultivations, plant density is higher than in the open field and plants have to compete for light and nutrients. Nowadays, advanced systems for indoor horticulture use light emitting diodes (LED) for improving crop growth, enhancing the plant productivity and favouring the best nutritional quality formation. In closed environments, as indoor growing modules, the lighting system represents the only source of light and its features are fundamental for obtaining the best lighting performances for plant and the most efficient solution. LED lighting engines are more efficient compared to the lighting sources used traditionally in horticulture and allow light spectrum and intensity modulations to enhance the light use efficiency for plants. The lighting distribution and the digital controls are fundamental for tailoring the spectral distribution on each plant in specific moments of its growth and play an important role for optimizing growth and produce high-quality vegetables. LED lights can increase plant growth and yield, but also nutraceutical quality, since some light intensities increase pigments biosynthesis and enhance the antioxidants content of leaves or fruits: in this regards the selection of LED primary light sources in relation to the peaks of the absorbance curve of the plants is important.

Bridging the "green gap" of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals.

PubMed

Tsai, Yu-Lin; Liu, Che-Yu; Krishnan, Chirenjeevi; Lin, Da-Wei; Chu, You-Chen; Chen, Tzu-Pei; Shen, Tien-Lin; Kao, Tsung-Sheng; Charlton, Martin D B; Yu, Peichen; Lin, Chien-Chung; Kuo, Hao-Chung; He, Jr-Hau

2016-01-14

Green LEDs do not show the same level of performance as their blue and red cousins, greatly hindering the solid-state lighting development, which is the so-called "green gap". In this work, nano-void photonic crystals (NVPCs) were fabricated to embed within the GaN/InGaN green LEDs by using epitaxial lateral overgrowth (ELO) and nano-sphere lithography techniques. The NVPCs act as an efficient scattering back-reflector to outcouple the guided and downward photons, which not only boost the light extraction efficiency of LEDs with an enhancement of 78% but also collimate the view angle of LEDs from 131.5° to 114.0°. This could be because of the highly scattering nature of NVPCs which reduce the interference giving rise to Fabry-Perot resonance. Moreover, due to the threading dislocation suppression and strain relief by the NVPCs, the internal quantum efficiency was increased by 25% and droop behavior was reduced from 37.4% to 25.9%. The enhancement of light output power can be achieved as high as 151% at a driving current of 350 mA. Giant light output enhancement and directional control via NVPCs point the way towards a promising avenue of solid-state lighting.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

PubMed

Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

2018-04-18

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

Feasibility of Ultraviolet Light Emitting Diodes as an Alternative Light Source for Photocatalysis

NASA Technical Reports Server (NTRS)

Levine, Langanf H.; Richards, Jeffrey T.; Soler, Robert; Maxik, Fred; Coutts, Janelle; Wheeler, Raymond M.

2011-01-01

The objective of this study was to determine whether ultraviolet light emitting diodes (UV-LEDs) could serve as an alternative photon source efficiently for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp in a Silica-Titania Composite (STC) packed bed annular reactor. Lighting and thermal properties were characterized to assess the uniformity and total irradiant output. A forward current of (I(sub F)) 100 mA delivered an average irradiance of 4.0 m W cm(exp -2), which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED- and BLB-reactors were tested for the oxidization of 50 ppmv ethanol in a continuous flow-through mode with 0.94 sec space time. At the same irradiance, the UV-A LED reactor resulted in a lower PCO rate constant than the UV-A BLB reactor (19.8 vs. 28.6 nM CO2 sec-I), and consequently lower ethanol removal (80% vs. 91%) and mineralization efficiency (28% vs. 44%). Ethanol mineralization increased in direct proportion to the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED- reactor could be traced to uneven irradiance over the photocatalyst, leaving a portion of the catalyst was under-irradiated. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off' feature for periodic irradiation. Nevertheless, the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB. These results demonstrated that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch

NASA Astrophysics Data System (ADS)

Wilson, Nicholas; Mauch, Daniel; Meyers, Vincent; Feathers, Shannon; Dickens, James; Neuber, Andreas

2017-08-01

The electrical and optical characteristics of a high-power UV light emitting diode (LED) (365 nm wavelength) were evaluated under pulsed operating conditions at current amplitudes several orders of magnitude beyond the LED's manufacturer specifications. Geared towards triggering of photoconductive semiconductor switches (PCSSs) for pulsed power applications, measurements were made over varying pulse widths (25 ns-100 μs), current (0 A-250 A), and repetition rates (single shot-5 MHz). The LED forward voltage was observed to increase linearly with increasing current (˜3.5 V-53 V) and decrease with increasing pulse widths. The peak optical power observed was >30 W, and a maximum system efficiency of 23% was achieved. The evaluated LED and auxiliary hardware were successfully used as the optical trigger source for a 4H-SiC PCSS. The lowest measured on-resistance of SiC was approximately 67 kΩ.

Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch.

PubMed

Wilson, Nicholas; Mauch, Daniel; Meyers, Vincent; Feathers, Shannon; Dickens, James; Neuber, Andreas

2017-08-01

The electrical and optical characteristics of a high-power UV light emitting diode (LED) (365 nm wavelength) were evaluated under pulsed operating conditions at current amplitudes several orders of magnitude beyond the LED's manufacturer specifications. Geared towards triggering of photoconductive semiconductor switches (PCSSs) for pulsed power applications, measurements were made over varying pulse widths (25 ns-100 μs), current (0 A-250 A), and repetition rates (single shot-5 MHz). The LED forward voltage was observed to increase linearly with increasing current (∼3.5 V-53 V) and decrease with increasing pulse widths. The peak optical power observed was >30 W, and a maximum system efficiency of 23% was achieved. The evaluated LED and auxiliary hardware were successfully used as the optical trigger source for a 4H-SiC PCSS. The lowest measured on-resistance of SiC was approximately 67 kΩ.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quan, Zhijue, E-mail: quanzhijue@ncu.edu.cn; Liu, Junlin; Fang, Fang

The effect of InGaN/GaN superlattices (SLs) on quantum efficiency and forward voltage of vertical blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LED) grown on Si substrate has been experimentally and theoretically investigated. We have prepared two LED samples, in which the 30 and 45 periods of SLs are inserted between MQW active layers and n-GaN layer, respectively. Electroluminescence measurement shows that the LED with 45 periods of SLs has higher quantum efficiency but lower forward voltage. It is observed that V-shaped pits grow up in size with an increase in SLs period number by means of scan transmission electronmore » microscope and secondary ion mass spectrometry. Further numerical simulations confirm that the performance improvement of LED by SLs is mainly ascribed to enhancing hole injection from the V-shaped pits.« less

Progress and prospects of GaN-based LEDs using nanostructures

NASA Astrophysics Data System (ADS)

Zhao, Li-Xia; Yu, Zhi-Guo; Sun, Bo; Zhu, Shi-Chao; An, Ping-Bo; Yang, Chao; Liu, Lei; Wang, Jun-Xi; Li, Jin-Min

2015-06-01

Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication. Project supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the “Import Outstanding Technical Talent Plan” and “Youth Innovation Promotion Association Program” of the Chinese Academy of Sciences.

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

NASA Astrophysics Data System (ADS)

Yang, W. F.; Liu, Z. G.; Xie, Y. N.; Cai, J. F.; Liu, S.; Gong, H.; Wu, Z. Y.

2012-06-01

This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.

Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

NASA Astrophysics Data System (ADS)

Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

2018-04-01

We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

NASA Astrophysics Data System (ADS)

Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

2018-06-01

Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

LEDs for Efficient Energy

ERIC Educational Resources Information Center

Guerin, David A.

1978-01-01

Light-emitting diodes (LEDs) are described and three classroom experiments are given, one to prove the, low power requirements and efficiency of LEDs, an LED on-off detector circuit, and the third an LED photoelectric smoke detector. (BB)

Design method of high-efficient 
LED headlamp lens.

PubMed

Chen, Fei; Wang, Kai; Qin, Zong; Wu, Dan; Luo, Xiaobing; Liu, Sheng

2010-09-27

Low optical efficiency of light-emitting diode (LED) based headlamp is one of the most important issues to obstruct applications of LEDs in headlamp. An effective high-efficient LED headlamp freeform lens design method is introduced in this paper. A low-beam lens and a high-beam lens for LED headlamp are designed according to this method. Monte Carlo ray tracing simulation results demonstrate that the LED headlamp with these two lenses can fully comply with the ECE regulation without any other lens or reflector. Moreover, optical efficiencies of both these two lenses are more than 88% in theory.

Metasurface integrated high energy efficient and high linearly polarized InGaN/GaN light emitting diode.

PubMed

Wang, Miao; Xu, Fuyang; Lin, Yu; Cao, Bing; Chen, Linghua; Wang, Chinhua; Wang, Jianfeng; Xu, Ke

2017-07-06

We proposed and demonstrated an integrated high energy efficient and high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with combined metasurface polarizing converter and polarizer system. It is different from those conventional polarized light emissions generated with plasmonic metallic grating in which at least 50% high energy loss occurs inherently due to high reflection of the transverse electric (TE) component of an electric field. A reflecting metasurface, with a two dimensional elliptic metal cylinder array (EMCA) that functions as a half-wave plate, was integrated at the bottom of a LED such that the back-reflected TE component, that is otherwise lost by a dielectric/metal bi-layered wire grids (DMBiWG) polarizer on the top emitting surface of the LED, can be converted to desired transverse magnetic (TM) polarized emission after reflecting from the metasurface. This significantly enhances the polarized light emission efficiency. Experimental results show that extraction efficiency of the polarized emission can be increased by 40% on average in a wide angle of ±60° compared to that with the naked bottom of sapphire substrate, or 20% compared to reflecting Al film on the bottom of a sapphire substrate. An extinction ratio (ER) of average value 20 dB within an angle of ±60° can be simultaneously obtained directly from an InGaN/GaN LED. Our results show the possibility of simultaneously achieving a high degree of polarization and high polarization extraction efficiency at the integrated device level. This advances the field of GaN LED toward energy efficiency, multi-functional applications in illumination, display, medicine, and light manipulation.

Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same

DOEpatents

Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; Kumnorkaew, Pisist

2013-11-19

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

Byproduct metals and rare-earth elements used in the production of light-emitting diodes—Overview of principal sources of supply and material requirements for selected markets

USGS Publications Warehouse

Wilburn, David R.

2012-01-01

The use of light-emitting diodes (LEDs) is expanding because of environmental issues and the efficiency and cost savings achieved compared with use of traditional incandescent lighting. The longer life and reduced power consumption of some LEDs have led to annual energy savings, reduced maintenance costs, and lower emissions of carbon dioxide, sulfur dioxide, and nitrogen oxides from powerplants because of the resulting decrease in energy consumption required for lighting applications when LEDs are used to replace less-energy-efficient sources. Metals such as arsenic, gallium, indium, and the rare-earth elements (REEs) cerium, europium, gadolinium, lanthanum, terbium, and yttrium are important mineral materials used in LED semiconductor technology. Most of the world's supply of these materials is produced as byproducts from the production of aluminum, copper, lead, and zinc. Most of the rare earths required for LED production in 2011 came from China, and most LED production facilities were located in Asia. The LED manufacturing process is complex and is undergoing much change with the growth of the industry and the changes in demand patterns of associated commodities. In many respects, the continued growth of the LED industry, particularly in the general lighting sector, is tied to its ability to increase LED efficiency and color uniformity while decreasing the costs of producing, purchasing, and operating LEDs. Research is supported by governments of China, the European Union, Japan, the Republic of Korea, and the United States. Because of the volume of ongoing research in this sector, it is likely that the material requirements of future LEDs may be quite different than LEDs currently (2011) in use as industry attempts to cut costs by reducing material requirements of expensive heavy rare-earth phosphors and increasing the sizes of wafers for economies of scale. Improved LED performance will allow customers to reduce the number of LEDs in automotive, electronic, and lighting applications, which could reduce the overall demand for material components. Non-Chinese sources for rare earths are being developed, and some of these new sources are likely to be operational in time to meet increasing demand for rare earths from the LED sector. Because most LED component production and manufacturing occurs in Asia and many LED producers have established supply contracts with Chinese producers of rare earths, a significant amount of the metallic gallium, indium, and the rare earths used for LED production will likely continue to come from Chinese sources at least for the next 5 years; however, a greater amount of these materials are now being processed in Japan, the Republic of Korea, and Taiwan. As non-Chinese sources of rare earths come into production, these new mines are likely to be sources of light REEs, but China will likely remain the leading source of supply for the heavy REEs suitable for use as LED dopants and phosphors at least for the next few years. Increased research in the development of phosphors that use smaller amounts of or different REEs is intended to reduce dependence on rare earths from China. Supply disruption of rare earths and other specialty metals could take place if China's specialty metal exports are redirected to domestic markets. The cost of recovery is high and the lifespan for LEDs is comparatively long; thus, the LED waste volume was low in 2010, and few LEDs were recycled. The minute metal content of LEDs leads to a high cost for recovery, so recycling of LEDs outside of electronic waste is unlikely in the near term, although some LED producers are evaluating recycling options. Recycling of metals from LEDs in electronic waste is possible if the costs of recovering metals are justified by demand and metal prices.

Progress in LED technology for solid-state lighting

NASA Astrophysics Data System (ADS)

Bhardwaj, Jy; Guth, Greg; Cesaratto, John M.; Shchekin, Oleg B.; Soer, Wouter A.; Götz, Werner; Bonné, Ron; Song, Zhihua F.; den Breejen, Jeroen

2017-02-01

As solid-state lighting adoption moves from bulb socket replacement to lighting system engineering, luminaire manufacturers are beginning to actualize far greater cost savings through luminaire optimization rather than the simplistic process of component cost pareto management. Indeed, there are an increasing number of applications in which we see major shifts in the value chain in terms of increasing the L1 (LED) and L2 (LED array on PCB) value. The L1 value increase stems from a number of factors ranging from simply higher performing LEDs reducing the LED count, to L1 innovation such as high voltage LEDs, optimizing driver efficiency or to the use of high luminance LEDs enabling compact optics, allowing not only more design freedom but also cost reduction through space and weight savings. The L2 value increase is realized predominantly through increasing L2 performance with the use of algorithms that optimize L1 selection and placement and/or through L2 integration of drivers, control electronics, sensors, secondary lens and/or environmental protection, which is also initiating level collapse in the value chain. In this paper we will present the L1 and L2 innovations that are enabling this disruption as well as provide examples of fixture/luminaire level benefits.

Kinetic study of acetaminophen degradation by visible light photocatalysis.

PubMed

Gotostos, Mary Jane N; Su, Chia-Chi; De Luna, Mark Daniel G; Lu, Ming-Chun

2014-01-01

In this work, a novel photocatalyst K3[Fe(CN)6]/TiO2 synthesized via a simple sol-gel method was utilized to degrade acetaminophen (ACT) under visible light with the use of blue and green LED lights. Parameters (medium pH, initial concentration of reactant, catalyst concentration, temperature, and number of blue LED lights) affecting photocatalytic degradation of ACT were also investigated. The experimental result showed that compared to commercially available Degussa P-25 (DP-25) photocatalyst, K3[Fe(CN)6]/TiO2 gave higher degradation efficiency and rate constant (kapp) of ACT. The degradation efficiency or kapp decreased with increasing initial ACT concentration and temperature, but increased with increased number of blue LED lamps. Additionally, kapp increased as initial pH was increased from 5.6 to 6.9, but decreased at a high alkaline condition (pH 8.3). Furthermore, the degradation efficiency and kapp of ACT increased as K3[Fe(CN)6]/TiO2 loading was increased to 1 g L(-1) but decreased and eventually leveled off at photocatalyst loading above this value. Photocatalytic degradation of ACT in K3[Fe(CN)6]/TiO2 catalyst system follows a pseudo-first-order kinetics. The Langmuir-Hinshelwood equation was also satisfactorily used to model the degradation of ACT in K3[Fe(CN)6]/TiO2 catalyst system indicated by a satisfactory linear correlation between 1/kapp and Co, with kini = 6.54 × 10(-4) mM/min and KACT = 17.27 mM(-1).

Chapter 6: Residential Lighting Evaluation Protocol. The Uniform Methods Project: Methods for Determining Energy Efficiency Savings for Specific Measures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurnik, Charles W; Dimetrosky, Scott; Parkinson, Katie

Given new regulations, increased complexity in the market, and the general shift from CFLs to LEDs, this evaluation protocol was updated in 2017 to shift the focus of the protocols toward LEDs and away from CFLs and to resolve evaluation uncertainties affecting residential lighting incentive programs.

Nonantibiotic interventions to control pathogens and undesired microbial activities in mixed microbial populations residing in the gut of food-producing animals and their excreted wastes

USDA-ARS?s Scientific Manuscript database

The intensification and industrialization of animal agriculture throughout the world has led to considerable increases in animal production efficiencies but has also led to concerns that microbial pathogens, antibiotic residues, and other chemical contaminants could be concentrated in the environmen...

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO

NASA Astrophysics Data System (ADS)

Okada, N.; Morishita, N.; Mori, A.; Tsukada, T.; Tateishi, K.; Okamoto, K.; Tadatomo, K.

2017-04-01

Light-emitting diodes (LEDs) have been demonstrated with a thin p-type layer using the plasmonic effect. Optimal LED device operation was found when using a 20-nm-thick p+-GaN layer. Ag of different thicknesses was deposited on the thin p-type layer and annealed to form the localized Ag particles. The localized Ag particles were embedded by indium tin oxide to form a p-type electrode in the LED structure. By optimization of the plasmonic LED, the significant electroluminescence enhancement was observed when the thickness of Ag was 9.5 nm. Both upward and downward electroluminescence intensities were improved, and the external quantum efficiency was approximately double that of LEDs without the localized Ag particles. The time-resolved photoluminescence (PL) decay time for the LED with the localized Ag particles was shorter than that without the localized Ag particles. The faster PL decay time should cause the increase in internal quantum efficiency by adopting the localized Ag particles. To validate the localized surface plasmon resonance coupling effect, the absorption of the LEDs was investigated experimentally and using simulations.

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

DOE PAGES

Zhang, Yuewei; Allerman, Andrew A.; Krishnamoorthy, Sriram; ...

2016-04-11

The efficiency of ultra violet LEDs has been critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling based p-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs withoutmore » the need for complex manufacturing methods such as flip chip bonding.« less

Energy saving through LED in signaling functions for automotive exterior lighting

NASA Astrophysics Data System (ADS)

Bony, Alexis; Hamami, Khaled; Tebbe, Frank; Mertens, Jens

2011-05-01

Safety considerations have always driven the way for improving exterior automotive lighting legal requirements. With the recent adoption of day-time running lamps for passenger cars, the steadily increasing need for reduction of vehicle power consumption has led to the introduction of LED-based day-time running lamps. Solutions with incandescent bulbs have also been implemented, as they present price advantages while offering limited design perspectives. In the meantime, technology developments has turned LED sources into ideal candidates for daytime running lamps by increasing their lumen per watt efficiency ratio towards values around 100 lm/W or higher. In this work, taking as an example the new Mercedes-Benz roadster SLK (R172), we present the first single LED daytime- running lamp, with a total power consumption below 5W per vehicle. After reviewing legal requirements, the optical and electronic concepts are discussed. Details on the tail lamp LED functions are also discussed, and particularly the advantages from the realization of fog lamp with LEDs.

Laser Based Phosphor Converted Solid State White Light Emitters

NASA Astrophysics Data System (ADS)

Cantore, Michael

Artificial lighting and as a consequence the ability to be productive when the sun does not shine may be a profound achievement in society that is largely taken for granted. As concerns arise due to our dependence on energy sources with finite lifespan or environmentally negative effects, efforts to reduce energy consumption and create clean renewable alternatives has become highly valued. In the scope of artificial lighting, the use of incandescent lamps has shifted to more efficient light sources. Fluorescent lighting made the first big gains in efficiency over incandescent lamps with peak efficiency for mature designs reaching luminous efficacy of approximately 90 lm/W; more than three times as efficient as an incandescent lamp. Lamps based on light emitting diodes (LEDs) which can produce light at even greater efficiency, color quality and without the potential for hazardous chemical release from lamp failure. There is a significant challenge with LED based light sources. Their peak efficiency occurs at low current densities and then droops as the current density increases. Laser diodes (LDs) do not suffer from decreasing efficiency due to increased current. An alternative solid state light source using LDs has potential to make further gains in efficiency as well as allow novel illuminant designs which may be impractical or even impossible even with LED or other conventional sources. While similar to LEDS, the use of LDs does present new challenges largely due to the increased optical power density which must be accommodated in optics and phosphor materials. Single crystal YAG:Ce has been shown to be capable of enduring this more extreme operating environment while retaining the optical and fluorescing qualities desired for use as a wavelength converter in phosphor converted LD based white emitting systems. The incorporation of this single crystal phosphor in a system with a commercial laser diode with peak wall plug efficiency of 31% resulted in emission of white light with a luminous efficacy of 86.7 lm/W at a current of 1.4A. A total luminous flux of 1100 lm with luminous efficacy of 76 lm/W at 3.0 A current was achieved. Simulations have been conducted which show that as the InGaN LD technology matures towards the efficiencies of about 75%, which has been observed in the GaAs material system, luminous efficacy of similar blue LD with single crystal YAG:Ce systems will exceed 200 lm/W.

Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingsheng, E-mail: xsxu@semi.ac.cn

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreasedmore » with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.« less

Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Dong; Peng, Yuelin; Fu, Yongping

Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room- temperature solution-processed lead halide perovskites with high- efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C 6H 5CH 2CH 2NH 3 +, PEA) lead bromide [(PEA) 2PbBr 4]. The natural quantum confinement of two-dimen- sional layered perovskite (PEA) 2PbBr 4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA) 2PbBr 4 nanoplates using solvent vapor annealing,more » we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA) 2PbBr 4 samples and the external quantum efficiency of the violet LED. Finally, the solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.« less

Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates

DOE PAGES

Liang, Dong; Peng, Yuelin; Fu, Yongping; ...

2016-06-23

Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room- temperature solution-processed lead halide perovskites with high- efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C 6H 5CH 2CH 2NH 3 +, PEA) lead bromide [(PEA) 2PbBr 4]. The natural quantum confinement of two-dimen- sional layered perovskite (PEA) 2PbBr 4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA) 2PbBr 4 nanoplates using solvent vapor annealing,more » we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA) 2PbBr 4 samples and the external quantum efficiency of the violet LED. Finally, the solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.« less

Thermal management of LEDs: package to system

NASA Astrophysics Data System (ADS)

Arik, Mehmet; Becker, Charles A.; Weaver, Stanton E.; Petroski, James

2004-01-01

Light emitting diodes, LEDs, historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors have led to a movement towards general illumination. The increased electrical currents used to drive the LEDs have focused more attention on the thermal paths in the developments of LED power packaging. The luminous efficiency of LEDs is soon expected to reach over 80 lumens/W, this is approximately 6 times the efficiency of a conventional incandescent tungsten bulb. Thermal management for the solid-state lighting applications is a key design parameter for both package and system level. Package and system level thermal management is discussed in separate sections. Effect of chip packages on junction to board thermal resistance was compared for both SiC and Sapphire chips. The higher thermal conductivity of the SiC chip provided about 2 times better thermal performance than the latter, while the under-filled Sapphire chip package can only catch the SiC chip performance. Later, system level thermal management was studied based on established numerical models for a conceptual solid-state lighting system. A conceptual LED illumination system was chosen and CFD models were created to determine the availability and limitations of passive air-cooling.

High-efficiency Light-emitting Devices based on Semipolar III-Nitrides

NASA Astrophysics Data System (ADS)

Oh, Sang Ho

In the future, the light-emitting diodes (LEDs) are expected to fully penetrate into the lighting market. A tremendous amount of energy will be saved through the LED-based lighting. Apparently, the amount of the energy saving strongly depends on the efficiency of the LEDs: this dissertation is all about the efficiency. First, the III-nitride LEDs grown on free-standing semipolar (202¯1¯) GaN substrates will be discussed. In many studies, LEDs grown on semipolar III-nitride substrates exhibited high efficiency at high current density. In this dissertation, "droop-free" (202¯1¯) blue LEDs will be demonstrated, especially for the standard industrial chip size. In addition, contact optimization process for (202¯1¯) LEDs will be discussed. Series resistance of the (202¯1¯) LED devices has been improved through the contact optimization. As a result, the wall-plug efficiency (WPE) of the device was boosted by ˜50%, compared to that of the previously reported (202¯1¯) LEDs. Also, chip shaping for the semipolar LEDs to enhance the extraction efficiency will be covered as well. A new mesa design will be introduced, and the cleaving scheme for semipolar LED wafers will be thoroughly discussed. Lastly, as a future work, selective area growth of ZnO light extraction features will be introduced and its preliminary result will be demonstrated.

Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Fan, Chao; Chen, Yu; Hu, Qiang; Li, Jinmin

2014-05-01

In this study, the periodic SiO2 nanosphere nanopatterned sapphire substrate (SiO2-NPSS) was made using self-assembled SiO2 nanosphere monolayer template and inductively coupled plasma (ICP) etching. And the self-assembled SiO2 nanosphere monolayer was directly embedded into the GaN/sapphire interface by nanoscale epitaxial lateral overgrowth (NELOG). For comparison, a common nanopatterned sapphire substrate (C-NPSS) was also made through dry etching with the SiO2 nanospheres used as the mask. Compared with LEDs grown on C-NPSS and flat sapphire substrate (FSS), the external quantum efficiency of LEDs with SiO2 nanopheres (SiO2-NPSS) was increased by 30.7% and 81.9% under a driving current 350 mA. The SiO2-NPSS not only improved the crystalline quality of GaN but also enhanced the light extraction efficiency (LEE) of LED. And the SiO2-NPSS LED also showed more light in vertical direction and more uniform light distribution. By finite-difference time-domain (FDTD) simulation, we confirmed that more light could be reflected from the GaN/SiO2 interface than the GaN/sapphire interface because the refractive index of SiO2 was lower than that of sapphire. Therefore, LED grown on the SiO2-NPSS showed superior light extraction efficiency compared to that on C-NPSS.

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

PubMed

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Feasibility of ultraviolet-light-emitting diodes as an alternative light source for photocatalysis.

PubMed

Levine, Lanfang H; Richards, Jeffrey T; Coutts, Janelle L; Soler, Robert; Maxik, Fred; Wheeler, Raymond M

2011-09-01

The objective of this study was to determine whether ultraviolet-light-emitting diodes (UV-LEDs) could serve as an efficient photon source for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A (lambda max = 365 nm) LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp for a bench scale annular reactor packed with silica-titania composite (STC) pellets. Lighting and thermal properties of the module were characterized to assess its uniformity and total irradiance. A forward current (I(F)) of 100 mA delivered an average irradiance of 4.0 mW cm(-2) at a distance of 8 mm, which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED and BLB reactors were tested for the oxidization of ethanol (50 ppm(v)) in a continuous-flow-through mode with 0.94 sec residence time. At the same average irradiance, the UV-A LED reactor resulted in a lower CO2 production rate (19.8 vs. 28.6 nmol L(-1) s(-1)), lower ethanol removal (80% vs. 91%), and lower mineralization efficiency (28% vs. 44%) than the UV-A BLB reactor. Ethanol mineralization was enhanced with the increase of the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED reactor relative to the BLB reactor at the same average irradiance could be attributed to the nonuniform irradiance over the photocatalyst, that is, a portion of the catalyst was exposed to less than the average irradiance. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off" feature for periodic irradiation. Nevertheless, our results also showed that the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB, demonstrating that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

Analysis of LED arrangement in an array with respect to lens geometry

NASA Astrophysics Data System (ADS)

Ley, Peer-Phillip; Held, Marcel Philipp; Lachmayer, Roland

2018-02-01

Highly adaptive light sources such as LED arrays have been surpassing conventional light sources (halogen, xenon) for automotive applications. Individual LED arrangements within the array, high durability and low energy consumption of the LEDs are some of the reasons. With the introduction of Audi's Matrix beam system, efforts to increase the quantity of pixels were already underway and the stage was practically set for pixel light systems. Current efforts are focused towards the exploration of an optimal LED array density and the use of spatial light modulators. In both cases, one question remains - What arrangement of LEDs is the most suitable in terms of light output efficiency for a given lens geometry? The radiation characteristics of an LED usually shows a Lambertian pattern. Following from the definition of luminous efficacy, this characteristic property of LEDs has a decisive impact on the lens geometry in a given array. Due to the proportional correlation between the lens diameter and the distance of LEDs emission surface to the lens surface. Assuming a constant viewing angle an increase of the distance leads to an increase of the lens diameter. In this paper, two different approaches for an optimized LED array with regards to the LED arrangement will be presented. The introduced designs result from one imaging and one non-imaging optical system, which will be investigated. The paper is concluded with a comparative analysis of the LED array design as a function of the LED pitch and the luminous efficacy.

Review – Quantum Dots and Their Application in Lighting, Displays, and Biology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frecker, Talitha; Bailey, Danielle; Arzeta-Ferrer, Xochitl

2015-08-18

In this review, we focus on the advancement of white light emitting nanocrystals, their usage as the emissive layer in LEDs and display backlights, and examine the increased efficiency and longevity of quantum dots based colored LEDs. In addition, we also explore recent discoveries on quantum dots as biological labels, dynamic trackers, and applications in drug delivery.

Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit.

PubMed

Yeon, Seunghwan; Son, Taejoon; Shin, Dong Su; Jung, Kyung-Young; Park, Jinsub

2015-07-01

We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.

Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dongxue, Wu; Ping, Ma; Boting, Liu; Shuo, Zhang; Junxi, Wang; Jinmin, Li

2016-10-01

The effect of patterned sapphire substrate (PSS) on the top-surface (P-GaN-surface) and the bottom-surface (sapphire-surface) of the light output power (LOP) of GaN-based LEDs was investigated, in order to study the changes in reflection and transmission of the GaN-sapphire interface. Experimental research and computer simulations were combined to reveal a great enhancement in LOP from either the top or bottom surface of GaN-based LEDs, which are prepared on patterned sapphire substrates (PSS-LEDs). Furthermore, the results were compared to those of the conventional LEDs prepared on the planar sapphire substrates (CSS-LEDs). A detailed theoretical analysis was also presented to further support the explanation for the increase in both the effective reflection and transmission of PSS-GaN interface layers and to explain the causes of increased LOP values. Moreover, the bottom-surface of the PSS-LED chip shows slightly increased light output performance when compared to that of the top-surface. Therefore, the light extraction efficiency (LEE) can be further enhanced by integrating the method of PSS and flip-chip structure design. Project supported by the National High Technology Program of China (No. Y48A040000) and the National High Technology Program of China (No. Y48A040000).

Efficient resource allocation scheme for visible-light communication system

NASA Astrophysics Data System (ADS)

Kim, Woo-Chan; Bae, Chi-Sung; Cho, Dong-Ho; Shin, Hong-Seok; Jung, D. K.; Oh, Y. J.

2009-01-01

A visible-light communication utilizing LED has many advantagies such as visibility of information, high SNR (Signal to Noise Ratio), low installation cost, usage of existing illuminators, and high security. Furthermore, exponentially increasing needs and quality of LED have helped the development of visible-light communication. The visibility is the most attractive property in visible-light communication system, but it is difficult to ensure visibility and transmission efficiency simultaneously during initial access because of the small amount of initial access process signals. In this paper, we propose an efficient resource allocation scheme at initial access for ensuring visibility with high resource utilization rate and low data transmission failure rate. The performance has been evaluated through the numerical analysis and simulation results.

Luminescence and luminescence quenching of highly efficient Y2Mo4O15:Eu3+ phosphors and ceramics

PubMed Central

Janulevicius, Matas; Marmokas, Paulius; Misevicius, Martynas; Grigorjevaite, Julija; Mikoliunaite, Lina; Sakirzanovas, Simas; Katelnikovas, Arturas

2016-01-01

A good LED phosphor must possess strong enough absorption, high quantum yields, colour purity, and quenching temperatures. Our synthesized Y2Mo4O15:Eu3+ phosphors possess all of these properties. Excitation of these materials with near-UV or blue radiation yields bright red emission and the colour coordinates are relatively stable upon temperature increase. Furthermore, samples doped with 50% Eu3+ showed quantum yields up to 85%, what is suitable for commercial application. Temperature dependent emission spectra revealed that heavily Eu3+ doped phosphors possess stable emission up to 400 K and lose half of the efficiency only at 515 K. In addition, ceramic disks of Y2Mo4O15:75%Eu3+ phosphor with thickness of 0.71 and 0.98 mm were prepared and it turned out that they efficiently convert radiation of 375 and 400 nm LEDs to the red light, whereas combination with 455 nm LED yields purple colour. PMID:27180941

Luminescence and luminescence quenching of highly efficient Y2Mo4O15:Eu(3+) phosphors and ceramics.

PubMed

Janulevicius, Matas; Marmokas, Paulius; Misevicius, Martynas; Grigorjevaite, Julija; Mikoliunaite, Lina; Sakirzanovas, Simas; Katelnikovas, Arturas

2016-05-16

A good LED phosphor must possess strong enough absorption, high quantum yields, colour purity, and quenching temperatures. Our synthesized Y2Mo4O15:Eu(3+) phosphors possess all of these properties. Excitation of these materials with near-UV or blue radiation yields bright red emission and the colour coordinates are relatively stable upon temperature increase. Furthermore, samples doped with 50% Eu(3+) showed quantum yields up to 85%, what is suitable for commercial application. Temperature dependent emission spectra revealed that heavily Eu(3+) doped phosphors possess stable emission up to 400 K and lose half of the efficiency only at 515 K. In addition, ceramic disks of Y2Mo4O15:75%Eu(3+) phosphor with thickness of 0.71 and 0.98 mm were prepared and it turned out that they efficiently convert radiation of 375 and 400 nm LEDs to the red light, whereas combination with 455 nm LED yields purple colour.

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

PubMed

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm². Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Thermophotonics for ultra-high efficiency visible LEDs

NASA Astrophysics Data System (ADS)

Ram, Rajeev J.

2017-02-01

The wall-plug efficiency of modern light-emitting diodes (LEDs) has far surpassed all other forms of lighting and is expected to improve further as the lifetime cost of a luminaire is today dominated by the cost of energy. The drive towards higher efficiency inevitably opens the question about the limits of future enhancement. Here, we investigate thermoelectric pumping as a means for improving efficiency in wide-bandgap GaN based LEDs. A forward biased diode can work as a heat pump, which pumps lattice heat into the electrons injected into the active region via the Peltier effect. We experimentally demonstrate a thermally enhanced 450 nm GaN LED, in which nearly fourfold light output power is achieved at 615 K (compared to 295 K room temperature operation), with virtually no reduction in the wall-plug efficiency at bias V < ℏω/q. This result suggests the possibility of removing bulky heat sinks in high power LED products. A review of recent high-efficiency GaN LEDs suggests that Peltier thermal pumping plays a more important role in a wide range of modern LED structures that previously thought - opening a path to even higher efficiencies and lower lifetime costs for future lighting.

Feasibility of light-emitting diode uses for annular reactor inner-coated with TiO2 or nitrogen-doped TiO2 for control of dimethyl sulfide.

PubMed

Jo, Wan-Kuen; Eun, Sung-Soo; Shin, Seung-Ho

2011-01-01

Limited environmental pollutants have only been investigated for the feasibility of light-emitting diodes (LED) uses in photocatalytic decomposition (PD). The present study investigated the applicability of LEDs for annular photocatalytic reactors by comparing PD efficiencies of dimethyl sulfide (DMS), which has not been investigated with any LED-PD system, between photocatalytic systems utilizing conventional and various LED lamps with different wavelengths. A conventional 8 W UV/TiO(2) system exhibited a higher DMS PD efficiency as compared with UV-LED/TiO(2) system. Similarly, a conventional 8 W visible-lamp/N-enhanced TiO(2) (NET) system exhibited a higher PD efficiency as compared with six visible-LED/NET systems. However, the ratios of PD efficiency to the electric power consumption were rather high for the photocatalytic systems using UV- or visible-LED lamps, except for two LED lamps (yellow- and red-LED lamps), compared to the photocatalytic systems using conventional lamps. For the photocatalytic systems using LEDs, lower flow rates and input concentrations and shorter hydraulic diameters exhibited higher DMS PD efficiencies. An Fourier-transformation infrared analysis suggested no significant absorption of byproducts on the catalyst surface. Consequently, it was suggested that LEDs can still be energy-efficiently utilized as alternative light sources for the PD of DMS, under the operational conditions used in this study. © 2011 The Authors. Photochemistry and Photobiology © 2011 The American Society of Photobiology.

ZnCuInS/ZnSe/ZnS quantum dot-based downconversion light-emitting diodes and their thermal effect

DOE PAGES

Liu, Wenyan; Zhang, Yu; Wang, Dan; ...

2015-08-13

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half-maximum (FWHM) and power efficiencies (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed littlemore » due to the low emission temperature coefficients of 0.022, 0.050 and 0.068 nm/°C for red-, yellow- and green-emitting ZnCuInS/ZnSe/ZnS QDs. Lastly this indicates that ZnCuInS/ZnSe/ZnS QDs are more suitable for down-conversion LEDs compared to CdSe QDs.« less

Integrated Nanoscale Antenna-LED for On-Chip Optical Communication

NASA Astrophysics Data System (ADS)

Fortuna, Seth

Traditional semiconductor light emitting diodes (LEDs) have low modulation speed because of long spontaneous emission lifetime. Spontaneous emission in semiconductors (and indeed most light emitters) is an inherently slow process owing to the size mismatch between the dipole length of the optical dipole oscillators responsible for light emission and the wavelength of the emitted light. More simply stated: semiconductors behave as a poor antenna for its own light emission. By coupling a semiconductor at the nanoscale to an external antenna, the spontaneous emission rate can be dramatically increased alluding to the exciting possibility of an antenna-LED that can be directly modulated faster than the laser. Such an antenna-LED is well-suited as a light source for on-chip optical communication where small size, fast speed, and high efficiency are needed to achieve the promised benefit of reduced power consumption of on-chip optical interconnect links compared with less efficient electrical interconnect links. Despite the promise of the antenna-LED, significant challenges remain to implement an antenna-coupled device in a monolithically integrated manner. Notably, most demonstrations of antenna-enhanced spontaneous emission have relied upon optical pumping of the light emitting material which is useful for fundamental studies; however, an electrical injection scheme is required for practical implementation of an antenna-LED. In this dissertation, demonstration of an electrically-injected III-V antenna-LED is reported: an important milestone toward on-chip optical interconnects. In the first part of this dissertation, the general design principles of enhancing the spontaneous emission rate of a semiconductor with an optical antenna is discussed. The cavity-backed slot antenna is shown to be uniquely suited for an electrically-injected antenna-LED because of large spontaneous emission enhancement, simple fabrication, and directional emission of light. The design, fabrication, and experimental results of the electrically-injected III-V antenna-LED is then presented. Clear evidence of antenna-enhanced electroluminescence is demonstrated including a large increase in the emitted light intensity with respect to an LED without antenna. Furthermore, it is shown that the active region emission wavelength is influenced by the antenna resonance and the emitted light is polarized; consistent with the expected behavior of the cavity-backed slot antenna. An antenna-LED consisting of a InGaAs quantum well active region is shown to have a large 200-fold enhancement of the spontaneous emission rate. In the last half of this dissertation, the performance of the antenna-LED is discussed. Remarkably, despite the high III-V surface recombination velocity, it is shown that an efficient antenna-LED consisting of an InGaAs active region is possible with an antenna-enhanced spontaneous emission rate. This is true provided the active region surface quality is preserved through the entire device process. A novel technique to preserve and clean InGaAs surfaces is reported. Finally, a rate-equation analysis shows that the optimized antenna-LED with cavity-backed slot antenna is fundamentally capable of achieving greater than 100 GHz direct modulation rate at high efficiency thus showing that an antenna-LED faster than the laser is achievable with this device architecture.

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning

DOE PAGES

Rouet-Leduc, Bertrand; Barros, Kipton Marcos; Lookman, Turab; ...

2016-04-26

A fundamental challenge in the design of LEDs is to maximise electro-luminescence efficiency at high current densities. We simulate GaN-based LED structures that delay the onset of efficiency droop by spreading carrier concentrations evenly across the active region. Statistical analysis and machine learning effectively guide the selection of the next LED structure to be examined based upon its expected efficiency as well as model uncertainty. This active learning strategy rapidly constructs a model that predicts Poisson-Schrödinger simulations of devices, and that simultaneously produces structures with higher simulated efficiencies.

Luminescence and Luminescence Quenching of K2Bi(PO4)(MoO4):Eu3+ Phosphors with Efficiencies Close to Unity.

PubMed

Grigorjevaite, Julija; Katelnikovas, Arturas

2016-11-23

A very good light emitting diode (LED) phosphor must have strong absorption, high quantum efficiency, high color purity, and high quenching temperature. Our synthesized K 2 Bi(PO 4 )(MoO 4 ):Eu 3+ phosphors possess all of the mentioned properties. The excitation of these phosphors with the near-UV or blue radiation results in a bright red luminescence dominated by the 5 D 0 → 7 F 2 transition at ∼615 nm. Color coordinates are very stable when changing Eu 3+ concentration or temperature in the range of 77-500 K. Furthermore, samples doped with 50% and 75% Eu 3+ showed quantum efficiencies close to 100% which is a huge benefit for practical application. Temperature dependent luminescence measurements showed that phosphor performance increases with increasing Eu 3+ concentration. K 2 Eu(PO 4 )(MoO 4 ) sample at 400 K lost only 20% of the initial intensity at 77 K and would lose half of the intensity only at 578 K. Besides, the ceramic disks with thicknesses of 0.33 and 0.89 mm were prepared from K 2 Eu(PO 4 )(MoO 4 ) powder, and it turned out that they efficiently converted the radiation of 375 nm LED to the red light. The conversion of 400 nm LED radiation to the red light was not complete; thus, the light sources with various tints of purple color were obtained. The combination of ceramic disks with 455 nm LED yielded the light sources with tints of blue color due to the low absorption of ceramic disk in this spectral range. In addition, these phosphors possess a very unique emission spectra; thus, they could also be applied in luminescent security pigments.

Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Hu, Hongpo; Liu, Xingtong; Liu, Mengling; Ding, Xinghuo; Gui, Chengqun; Liu, Sheng; Guo, L. Jay

2017-11-01

GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN nucleation layers by metal-organic chemical vapor deposition (MOCVD). It was observed through in situ optical reflectance monitoring that the transition time from a three-dimensional (3D) island to a two-dimensional (2D) coalescence was prolonged when GaN was grown on a larger PSS, owing to a much longer lateral growth time of GaN. The full widths at half-maximum (FWHMs) of symmetric GaN(002) and asymmetric GaN(102) X-ray diffraction (XRD) rocking curves decreased as the PSS size increased. By cross-sectional transmission electron microscopy (TEM) analysis, it was found that the threading dislocation (TD) density in UV LEDs decreased with increasing pattern size and fill factor of the PSS, thereby resulting in a marked improvement in internal quantum efficiency (IQE). Finite-difference time-domain (FDTD) simulations quantitatively demonstrated a progressive decrease in light extraction efficiency (LEE) as the PSS size increased. However, owing to the significantly reduced TD density in InGaN/AlInGaN multiple quantum wells (MQWs) and thus improved IQE, the light output power of the UV LED grown on a large PSS with a fill factor of 0.71 was 131.8% higher than that of the UV LED grown on a small PSS with a fill factor of 0.4, albeit the UV LED grown on a large PSS exhibited a much lower LEE.

Do Energy Efficiency Standards Improve Quality? Evidence from a Revealed Preference Approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Houde, Sebastien; Spurlock, C. Anna

Minimum energy efficiency standards have occupied a central role in U.S. energy policy for more than three decades, but little is known about their welfare effects. In this paper, we employ a revealed preference approach to quantify the impact of past revisions in energy efficiency standards on product quality. The micro-foundation of our approach is a discrete choice model that allows us to compute a price-adjusted index of vertical quality. Focusing on the appliance market, we show that several standard revisions during the period 2001-2011 have led to an increase in quality. We also show that these standards have hadmore » a modest effect on prices, and in some cases they even led to decreases in prices. For revision events where overall quality increases and prices decrease, the consumer welfare effect of tightening the standards is unambiguously positive. Finally, we show that after controlling for the effect of improvement in energy efficiency, standards have induced an expansion of quality in the non-energy dimension. We discuss how imperfect competition can rationalize these results.« less

The aspect ratio effects on the performances of GaN-based light-emitting diodes with nanopatterned sapphire substrates

NASA Astrophysics Data System (ADS)

Kao, Chien-Chih; Su, Yan-Kuin; Lin, Chuing-Liang; Chen, Jian-Jhong

2010-07-01

The nanopatterned sapphire substrates (NPSSs) with aspect ratio that varied from 2.00 to 2.50 were fabricated by nanoimprint lithography. We could improve the epitaxial film quality and enhance the light extraction efficiency by NPSS technique. In this work, the aspect ratio effects on the performances of GaN-based light-emitting diodes (LEDs) with NPSS were investigated. The light output enhancement of GaN-based LEDs with NPSS was increased from 11% to 27% as the aspect ratio of the NPSS increases from 2.00 to 2.50. Owing to the same improvement of crystalline quality by using various aspect ratios of NPSS, these results indicated that the aspect ratio of the NPSS is strongly related to the light extraction efficiency.

YAG glass-ceramic phosphor for white LED (II): luminescence characteristics

NASA Astrophysics Data System (ADS)

Tanabe, Setsuhisa; Fujita, Shunsuke; Yoshihara, Satoru; Sakamoto, Akihiko; Yamamoto, Shigeru

2005-09-01

Optical properties of the Ce:YAG glass-ceramic (GC) phosphor for the white LED were investigated. Concentration dependence of fluorescence intensity of Ce3+:5d→4f transition in the GC showed a maximum at 0.5mol%Ce2O3. Quantum efficiency (QE) of Ce3+ fluorescence in the GC materials, the color coordinate and luminous flux of electroluminescence of LED composite were evaluated with an integrating sphere. QE increased with increasing ceramming temperature of the as-made glass. The color coordinates (x,y) of the composite were increased with increasing thickness of the GC mounted on a blue LED chip. The effect of Gd2O3 substitution on the optical properties of the GC materials was also investigated. The excitation and emission wavelength shifted to longer side up to Gd/(Y+Gd)=0.40 in molar composition. As a result, the color coordinate locus of the LED with various thickness of the GdYAG-GC shifted to closer to the Planckian locus for the blackbody radiation. These results were explained by partial substitution of Gd3+ ions in the precipitated YAG micro-crystals, leading to the increase of lattice constant of unit cell, which was confirmed by X-ray diffraction.

Optimizing illumination in the greenhouse using a 3D model of tomato and a ray tracer

PubMed Central

de Visser, Pieter H. B.; Buck-Sorlin, Gerhard H.; van der Heijden, Gerie W. A. M.

2014-01-01

Reduction of energy use for assimilation lighting is one of the most urgent goals of current greenhouse horticulture in the Netherlands. In recent years numerous lighting systems have been tested in greenhouses, yet their efficiency has been very difficult to measure in practice. This simulation study evaluated a number of lighting strategies using a 3D light model for natural and artificial light in combination with a 3D model of tomato. The modeling platform GroIMP was used for the simulation study. The crop was represented by 3D virtual plants of tomato with fixed architecture. Detailed data on greenhouse architecture and lamp emission patterns of different light sources were incorporated in the model. A number of illumination strategies were modeled with the calibrated model. Results were compared to the standard configuration. Moreover, adaptation of leaf angles was incorporated for testing their effect on light use efficiency (LUE). A Farquhar photosynthesis model was used to translate the absorbed light for each leaf into a produced amount of carbohydrates. The carbohydrates produced by the crop per unit emitted light from sun or high pressure sodium lamps was the highest for horizontal leaf angles or slightly downward pointing leaves, and was less for more upward leaf orientations. The simulated leaf angles did not affect light absorption from inter-lighting LED modules, but the scenario with LEDs shining slightly upward (20°) increased light absorption and LUE relative to default horizontal beaming LEDs. Furthermore, the model showed that leaf orientation more perpendicular to the string of LEDs increased LED light interception. The combination of a ray tracer and a 3D crop model could compute optimal lighting of leaves by quantification of light fluxes and illustration by rendered lighting patterns. Results indicate that illumination efficiency increases when the lamp light is directed at most to leaves that have a high photosynthetic potential. PMID:24600461

LED power efficiency of biomass, fatty acid, and carotenoid production in Nannochloropsis microalgae.

PubMed

Ma, Ruijuan; Thomas-Hall, Skye R; Chua, Elvis T; Eltanahy, Eladl; Netzel, Michael E; Netzel, Gabriele; Lu, Yinghua; Schenk, Peer M

2018-03-01

The microalga Nannochloropsis produces high-value omega-3-rich fatty acids and carotenoids. In this study the effects of light intensity and wavelength on biomass, fatty acid, and carotenoid production with respect to light output efficiency were investigated. Similar biomass and fatty acid yields were obtained at high light intensity (150 μmol m -2  s -1 ) LEDs on day 7 and low light intensity (50 μmol m -2  s -1 ) LEDs on day 11 during cultivation, but the power efficiencies of biomass and fatty acid (specifically eicosapentaenoic acid) production were higher for low light intensity. Interestingly, low light intensity enhanced both, carotenoid power efficiency of carotenoid biosynthesis and yield. White LEDs were neither advantageous for biomass and fatty acid yields, nor the power efficiency of biomass, fatty acid, and carotenoid production. Noticeably, red LED resulted in the highest biomass and fatty acid power efficiency, suggesting that LEDs can be fine-tuned to grow Nannochloropsis algae more energy-efficiently. Copyright © 2017 Elsevier Ltd. All rights reserved.

GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Sun, Yongjian; Trieu, Simeon; Yu, Tongjun; Chen, Zhizhong; Qi, Shengli; Tian, Pengfei; Deng, Junjing; Jin, Xiaoming; Zhang, Guoyi

2011-08-01

Vertical structure LEDs have been fabricated with a novel light extraction composite surface structure composed of a micron grating and nano-structure. The composite surface structure was generated by using a modified YAG laser lift-off technique, separating the wafers from cone-shaped patterned sapphire substrates. LEDs thus fabricated showed the light output power increase about 1.7-2.5 times when compared with conventional vertical structure LEDs grown on plane sapphire substrates. A three-dimensional finite difference time domain method was used to simulate this new kind of LED device. It was determined that nano-structures in composite surface patterns play a key role in the improvement of light extraction efficiency of LEDs.

CMOS-compatible plenoptic detector for LED lighting applications.

PubMed

Neumann, Alexander; Ghasemi, Javad; Nezhadbadeh, Shima; Nie, Xiangyu; Zarkesh-Ha, Payman; Brueck, S R J

2015-09-07

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Ruijun; Liu Duo; Zuo Zhiyuan

2012-03-15

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10more » min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.« less

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Apparatus and method for measuring single cell and sub-cellular photosynthetic efficiency

DOEpatents

Davis, Ryan Wesley; Singh, Seema; Wu, Huawen

2013-07-09

Devices for measuring single cell changes in photosynthetic efficiency in algal aquaculture are disclosed that include a combination of modulated LED trans-illumination of different intensities with synchronized through objective laser illumination and confocal detection. Synchronization and intensity modulation of a dual illumination scheme were provided using a custom microcontroller for a laser beam block and constant current LED driver. Therefore, single whole cell photosynthetic efficiency, and subcellular (diffraction limited) photosynthetic efficiency measurement modes are permitted. Wide field rapid light scanning actinic illumination is provided for both by an intensity modulated 470 nm LED. For the whole cell photosynthetic efficiency measurement, the same LED provides saturating pulses for generating photosynthetic induction curves. For the subcellular photosynthetic efficiency measurement, a switched through objective 488 nm laser provides saturating pulses for generating photosynthetic induction curves. A second near IR LED is employed to generate dark adapted states in the system under study.

Preliminary studies on LED-activated pyropheophorbide-α methyl ester killing cisplatin-resistant ovarian carcinoma cells

NASA Astrophysics Data System (ADS)

Tan, Yong; Xu, Chuan Shan; Xia, Xin Shu; Yu, He Ping; Bai, Ding Qun; He, Yong; Xu, Jing; Wang, Ping; Wang, Xin Na; Leung, Albert Wing Nang

2009-05-01

In the present study, a novel LED source was applied for activating pyropheophorbids-a methyl ester (MPPa) in cisplatin-resistant ovarian cell line COC1/DDP cells. MPPa concentration was 2 μM and light energy from 0.125-8 J/cm2. Cytotoxicity was investigated 24 h using MTT reduction assay and light microscopy after treatment. Cellular ultrastructure was observed using transmission electron microscopy (TEM) and nuclear chromatin by fluorescent microscope with Hoechst33258 staining. MTT reduction assay showed that the cytotoxicity of LED-activated MPPa in the COC1/DDP cells increased along with the light dose of LED source and LED-activated MPPa resulted in light-dependent cytotoxicity. The observations from light microscopy reinforced the above results. TEM showed that necrotic cells with the disruption of karyotheca, karyorrhexis, and karyolysis of nucleus and apoptotic cells, especially the apoptotic body, can be seen post LED-activated MPPa. Hoechst33258 staining showed that condensation of chromatin and nuclear fragmentations could be found in many treated cells and some of them formed the structure of apoptotic bodies when COC1/DDP cells were exposed to 2 μM MPPa for 20 h and then 1 J/cm2 irradiation of LED source. The findings demonstrated that the novel LED source could efficiently activated MPPa and LED-activated MPPa could significantly kill cisplatin-resistant ovarian cell line COC1/DDP cells through two major pathways including necrosis and apoptosis, suggesting that LED is a novel and efficient light source and LED-activated MPPa might be potential therapeutic modality for treating cisplatin-resistant ovarian carcinoma.

Significant growth in. LED use predicted.

PubMed

Simpson, Mike

2012-03-01

Although LED lighting has its critics, a number of whom (see article 'LED--panacea or marketing hype', HEJ--February 2012) are concerned about what they claim are some manufacturers' 'exaggerated claims' about lighting efficiency and lamp lifetime, Philips Lighting believes that, such are the advances being made in this innovative lighting technology, that LED's overall share of the European lighting market will have risen from around 7% in 2008 to 25% by 2020 and that, a decade later, it will account for a remarkable 75% of lighting sales. In the UK, Philips' technical and design director for Lighting, Mike Simpson, told HEJ editor, Jonathan Baillie, healthcare estates and facilities managers are increasingly recognising the potential to save energy, reduce carbon emissions, and cut maintenance costs, using LED.

A comparative study of coagulation, granular- and powdered-activated carbon for the removal of perfluorooctane sulfonate and perfluorooctanoate in drinking water treatment.

PubMed

Pramanik, Biplob Kumar; Pramanik, Sagor Kumar; Suja, Fatihah

2015-01-01

Perfluorooctane sulfonate (PFOS) and perfluorooctanoate (PFOA) are persistent organic pollutants in the environment and their occurrence causes toxicological effects on humans. We examined different conventional coagulant treatments such as alum, ferric chloride and polyaluminium chloride in removing these compounds. These were then compared with a natural coagulant (Moringa oleifera). We also investigated the powdered-activated carbon (PAC) and granular-activated carbon (GAC) for removing these compounds. At an initial dose of 5 mg/L, polyaluminium chloride led to a higher reduction of PFOS/PFOA compared with alum which in turn was higher than ferric. The removal efficiency increased with the increase in coagulant dose and decrease in pH. M. oleifera was very effective in reducing PFOS and PFOA than conventional coagulants, with a reduction efficiencies of 65% and 72%, respectively, at a dose of 30 mg/L. Both PAC and GAC were very effective in reducing these compounds than coagulations. PAC led to a higher reduction in PFOS and PFOA than GAC due to its greater surface area and shorter internal diffusion distances. The addition of PAC (10 min contact time) with coagulation (at 5 mg/L dosage) significantly increased the removal efficiency, and the maximum removal efficiency was for M. oleifera with 98% and 94% for PFOS and PFOA, respectively. The reduction efficiency of PFOS/PFOA was reduced with the increase in dissolved organic concentration due to the adsorption competition between organic molecules and PFOS/PFOA.

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

PubMed

Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing

2013-06-17

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

Low-picomolar limits of detection using high-power light-emitting diodes for fluorescence.

PubMed

de Jong, Ebbing P; Lucy, Charles A

2006-05-01

Fluorescence detectors are ever more frequently being used with light-emitting diodes (LEDs) as the light source. Technological advances in the solid-state lighting industry have produced LEDs which are also suitable tools in analytical measurements. LEDs are now available which deliver 700 mW of radiometric power. While this greater light power can increase the fluorescence signal, it is not trivial to make proper use of this light. This new generation of LEDs has a large emitting area and a highly divergent beam. This presents a classic problem in optics where one must choose between either a small focused light spot, or high light collection efficiency. We have selected for light collection efficiency, which yields a light spot somewhat larger than the emitting area of the LED. This light is focused onto a flow cell. Increasing the detector cell internal diameter (i.d.) produces gains in (sensitivity)3. However, since the detector cell i.d. is smaller than the LED spot size, scattering of excitation light towards the detector remains a significant source of background signal. This can be minimized through the use of spectral filters and spatial filters in the form of pinholes. The detector produced a limit of detection (LOD) of 3 pM, which is roughly three orders of magnitude lower than other reports of LED-based fluorescence detectors. Furthermore, this LOD comes within a factor of six of much more expensive laser-based fluorescence systems. This detector has been used to monitor a separation from a gel filtration column of fluorescently labeled BSA from residual labeling reagent. The LOD of fluorescently labeled BSA is 25 pM.

Understanding possible underlying mechanism in declining germicidal efficiency of UV-LED reactor.

PubMed

Lee, Hyunkyung; Jin, Yongxun; Hong, Seungkwan

2018-06-07

Since ultraviolet light emitting diodes (UV-LEDs) have emerged as an alternative light source for UV disinfection systems, enhancement of reactor performance is a demanding challenge to promote its practical application in water treatment process. This study explored the underlying mechanism of the inefficiency observed in flow-through mode UV disinfection tests to improve the light utilization of UV-LED applications. In particular, the disinfection performance of UV-LED reactors was evaluated using two different flow channel types, reservoir and pathway systems, in order to elucidate the impact of physical circumstances on germicidal efficiency as the light profile was adjusted. Overall, a significant reduction in germicidal efficiency was observed when exposure time was prolonged or a mixing chamber was integrated. Zeta analysis revealed that the repulsion rate between microorganisms decreased with UV fluence transfer, and that change might cause the shielding effect of UV delivery to target microorganisms. In line with the above findings, the reduction in efficiency intensified when opportunities for microbial collision increased. Thus, UV induced microbial aggregation was implicated as being a disinfection hindering factor, exerting its effect through uneven UV illumination. Ultimately, the results refuted the prevailing belief that UV has a cumulative effect. We found that the reservoir system achieved worse performance than the pathway system despite it providing 15 times higher UV fluence: the differences in germicidal efficiency were 1-log, 1.4-log and 1.7-log in the cases of P.aeruginosa, E.coli and S.aureus, respectively. Copyright © 2018 Elsevier B.V. All rights reserved.

Fundamental Studies and Development of III-N Visible LEDs for High-Power Solid-State Lighting Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dupuis, Russell

The goal of this program is to understand in a fundamental way the impact of strain, defects, polarization, and Stokes loss in relation to unique device structures upon the internal quantum efficiency (IQE) and efficiency droop (ED) of III-nitride (III-N) light-emitting diodes (LEDs) and to employ this understanding in the design and growth of high-efficiency LEDs capable of highly-reliable, high-current, high-power operation. This knowledge will be the basis for our advanced device epitaxial designs that lead to improved device performance. The primary approach we will employ is to exploit new scientific and engineering knowledge generated through the application of amore » set of unique advanced growth and characterization tools to develop new concepts in strain-, polarization-, and carrier dynamics-engineered and low-defect materials and device designs having reduced dislocations and improved carrier collection followed by efficient photon generation. We studied the effects of crystalline defect, polarizations, hole transport, electron-spillover, electron blocking layer, underlying layer below the multiplequantum- well active region, and developed high-efficiency and efficiency-droop-mitigated blue LEDs with a new LED epitaxial structures. We believe new LEDs developed in this program will make a breakthrough in the development of high-efficiency high-power visible III-N LEDs from violet to green spectral region.« less

Smooth light extraction in lighting optical fibre

NASA Astrophysics Data System (ADS)

Fernandez-Balbuena, A. A.; Vazquez-Molini, D.; Garcia-Botella, A.; Martinez-Anton, J. C.; Bernabeu, E.

2011-10-01

Recent advances in LED technology have relegated the use of optical fibre for general lighting, but there are several applications where it can be used as scanners lighting systems, daylight, cultural heritage lighting, sensors, explosion risky spaces, etc. Nowadays the use of high intensity LED to inject light in optical fibre increases the possibility of conjugate fibre + LED for lighting applications. New optical fibres of plastic materials, high core diameter up to 12.6 mm transmit light with little attenuation in the visible spectrum but there is no an efficient and controlled way to extract the light during the fibre path. Side extracting fibres extracts all the light on 2π angle so is not well suited for controlled lighting. In this paper we present an extraction system for mono-filament optical fibre which provides efficient and controlled light distribution. These lighting parameters can be controlled with an algorithm that set the position, depth and shape of the optical extraction system. The extraction system works by total internal reflection in the core of the fibre with high efficiency and low cost. A 10 m length prototype is made with 45° sectional cuts in the fibre core as extraction system. The system is tested with a 1W white LED illuminator in one side.

Progress in extremely high brightness LED-based light sources

NASA Astrophysics Data System (ADS)

Hoelen, Christoph; Antonis, Piet; de Boer, Dick; Koole, Rolf; Kadijk, Simon; Li, Yun; Vanbroekhoven, Vincent; Van De Voorde, Patrick

2017-09-01

Although the maximum brightness of LEDs has been increasing continuously during the past decade, their luminance is still far from what is required for multiple applications that still rely on the high brightness of discharge lamps. In particular for high brightness applications with limited étendue, e.g. front projection, only very modest luminance values in the beam can be achieved with LEDs compared to systems based on discharge lamps or lasers. With dedicated architectures, phosphor-converted green LEDs for projection may achieve luminance values up to 200-300 Mnit. In this paper we report on the progress made in the development of light engines based on an elongated luminescent concentrator pumped by blue LEDs. This concept has recently been introduced to the market as ColorSpark High Lumen Density LED technology. These sources outperform the maximum brightness of LEDs by multiple factors. In LED front projection, green LEDs are the main limiting factor. With our green modules, we now have achieved peak luminance values of 2 Gnit, enabling LED-based projection systems with over 4000 ANSI lm. Extension of this concept to yellow and red light sources is presented. The light source efficiency has been increased considerably, reaching 45-60 lm/W for green under practical application conditions. The module architecture, beam shaping, and performance characteristics are reviewed, as well as system aspects. The performance increase, spectral range extensions, beam-shaping flexibility, and cost reductions realized with the new module architecture enable a breakthrough in LED-based projection systems and in a wide variety of other high brightness applications.

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice

NASA Astrophysics Data System (ADS)

Huang, Yong; Li, PeiXian; Yang, Zhuo; Hao, Yue; Wang, XiaoBo

2014-05-01

Significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based UV light-emitting diode (LED) with inserting p-GaN/p-AlGaN superlattice (p-SLs) layers (instead of p-AlGaN single layer) between multiple quantum wells and Mg-doped GaN layer are reported. The pass yield of the LEDs increased from 73.53% to 93.81% under negative 2000 V ESD pulses. In addition, the light output power (LOP) and efficiency droop at high injection current were also improved. The mechanism of the enhanced ESD properties was then investigated. After excluding the effect of capacitance modulation, high-resolution X-ray diffraction (XRD) and atomic force microscope (AFM) measurements demonstrated that the dominant mechanism of the enhanced ESD properties is the material quality improved by p-SLs, which indicated less leakage paths, rather than the current spreading improved by p-SLs.

Growth behavior and growth rate dependency in LEDs performance for Mg-doped a-plane GaN

NASA Astrophysics Data System (ADS)

Song, Keun-Man; Kim, Jong-Min; Lee, Dong-Hun; Shin, Chan-Soo; Ko, Chul-Gi; Kong, Bo-Hyun; Cho, Hyung-Koun; Yoon, Dae-Ho

2011-07-01

We investigated the influence of growth rate of Mg-doped a-plane GaN on the surface morphological and electrical properties, and the characteristics of InGaN-based nonpolar LEDs. Mg-doped a-plane GaN layers were grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and cathode luminescence (CL) analysis exhibited that the surface morphology changed from stripe features with large triangular pits to rough and rugged surface with small asymmetric V-shape pits, as the growth rate increased. The Mg incorporation into a-plane GaN layers increased with increasing growth rate of Mg-doped a-plane GaN, while the activation efficiency of Mg dopants decreased in a-plane GaN. Additionally, it was found that operation voltage at 20 mA decreased in characteristics of LEDs, as the growth rate of Mg-doped a-plane GaN decreased. Meanwhile, the EL intensity of LEDs with p-GaN layers grown at higher growth rate was improved compared to that of LEDs with p-GaN layers grown at lower growth rate. Such an increase of EL intensity is attributed to the rougher surface morphology with increasing growth rate of Mg-doped a-plane GaN.

Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

PubMed

Bilousov, Oleksandr V; Carvajal, Joan J; Geaney, Hugh; Zubialevich, Vitaly Z; Parbrook, Peter J; Martínez, Oscar; Jiménez, Juan; Díaz, Francesc; Aguiló, Magdalena; O'Dwyer, Colm

2014-10-22

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

[Nurse-led in Primary Health Care setting: a well-timed and promising organizational innovation].

PubMed

Torres-Ricarte, Marc; Crusat-Abelló, Ernest; Peñuelas-Rodríguez, Silvia; Zabaleta-del-Olmo, Edurne

2015-01-01

At present, the severe economic crisis along with the increasing prevalence of chronic diseases is leading to different countries to consider updating their Primary Health Care (PHC) services in order to make them more efficient and reduce health inequalities. To that end, various initiatives are being carried out, such as the provision of Nurse-led services and interventions. The purpose of this article is to present the available knowledge, controversies and opportunities for Nurse-led initiatives in the setting of PHC. Nurse- led interventions or health services in PHC have proven to be equal or more effective than usual care in disease prevention, the routine follow-up of patients with chronic conditions, and first contact care for people with minor illness. However, as there are only a few health economic evaluation studies published their efficiency is still potential. In conclusion, the Nurse-led care could be an innovative organizational initiative with the potential to provide an adequate response to the contemporary health needs of the population, as well as an opportunity for the nursing profession and for PHC and health systems in general. Copyright © 2015 Elsevier España, S.L.U. All rights reserved.

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

NASA Astrophysics Data System (ADS)

Sun, Li; Weng, Guo-En; Liang, Ming-Ming; Ying, Lei-Ying; Lv, Xue-Qin; Zhang, Jiang-Yong; Zhang, Bao-Ping

2014-06-01

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O2 ambient (500 °C) and pure N2 ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N2 ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N2 ambient was lower than that annealed in O2 ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O2 ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N2 ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O2 ambient so as to obtain LEDs with better performance.

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination.

PubMed

Zhao, Chao; Ng, Tien Khee; Prabaswara, Aditya; Conroy, Michele; Jahangir, Shafat; Frost, Thomas; O'Connell, John; Holmes, Justin D; Parbrook, Peter J; Bhattacharya, Pallab; Ooi, Boon S

2015-10-28

We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.

Long-Term Effects of Red- and Blue-Light Emitting Diodes on Leaf Anatomy and Photosynthetic Efficiency of Three Ornamental Pot Plants

PubMed Central

Zheng, Liang; Van Labeke, Marie-Christine

2017-01-01

Light quality critically affects plant development and growth. Development of light-emitting diodes (LEDs) enables the use of narrow band red and/or blue wavelengths as supplementary lighting in ornamental production. Yet, long periods under these wavelengths will affect leaf morphology and physiology. Leaf anatomy, stomatal traits, and stomatal conductance, leaf hydraulic conductance (Kleaf), and photosynthetic efficiency were investigated in three ornamental pot plants, namely Cordyline australis (monocot), Ficus benjamina (dicot, evergreen leaves), and Sinningia speciosa (dicot, deciduous leaves) after 8 weeks under LED light. Four light treatments were applied at 100 μmol m−2 s−1 and a photoperiod of 16 h using 100% red (R), 100% blue (B), 75% red with 25% blue (RB), and full spectrum white light (W), respectively. B and RB resulted in a greater maximum quantum yield (Fv/Fm) and quantum efficiency (ΦPSII) in all species compared to R and W and this correlated with a lower biomass under R. B increased the stomatal conductance compared with R. This increase was linked to an increasing stomatal index and/or stomatal density but the stomatal aperture area was unaffected by the applied light quality. Leaf hydraulic conductance (Kleaf) was not significantly affected by the applied light qualities. Blue light increased the leaf thickness of F. benjamina, and a relative higher increase in palisade parenchyma was observed. Also in S. speciosa, increase in palisade parenchyma was found under B and RB, though total leaf thickness was not affected. Palisade parenchyma tissue thickness was correlated to the leaf photosynthetic quantum efficiency (ΦPSII). In conclusion, the role of blue light addition in the spectrum is essential for the normal anatomical leaf development which also impacts the photosynthetic efficiency in the three studied species. PMID:28611818

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.

PubMed

Liu, Mengling; Zhao, Jie; Zhou, Shengjun; Gao, Yilin; Hu, Jinfeng; Liu, Xingtong; Ding, Xinghuo

2018-06-21

Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based green LEDs. We recorded a sequence of light emission properties of InGaN/GaN multiple quantum wells (MQWs) grown on a 0- and 24-pair InGaN/GaN SL by using scanning electron microscopy (SEM) in combination with a room temperature cathodoluminescence (CL) measurement, which demonstrated the presence of a potential barrier formed by the V-pits around threading dislocations (TDs). We find that an increase in V-pit diameter would lead to the increase of V-pit potential barrier height. Our experimental data suggest that a V-pits-embedded, 24-pair InGaN/GaN SL can effectively suppress the lateral diffusion of carriers into non-recombination centers. As a result, the external quantum efficiency (EQE) of green LEDs is improved by 29.6% at an injection current of 20 mA after implementing the V-pits-embedded InGaN/GaN SL layer. In addition, a lower reverse leakage current was achieved with larger V-pits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S.

Solid-state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light-emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission,more » can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state-of-the-art input-power-density-dependent power-conversion efficiencies; potential improvements both in their peak power-conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.« less

Comparative Evaluation of Energy Measurement Models for Transit Systems

DOT National Transportation Integrated Search

1984-02-01

Recent advances in solid state control technology have led to chopper-controlled propulsion systems in urban rail transit applications. Such systems offer the potential for superior train performance through increased train propulsion efficiency and ...

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

Powering a Home with Just 25 Watts of Solar PV. Super-Efficient Appliances Can Enable Expanded Off-Grid Energy Service Using Small Solar Power Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phadke, Amol A.; Jacobson, Arne; Park, Won Young

Highly efficient direct current (DC) appliances have the potential to dramatically increase the affordability of off-grid solar power systems used for rural electrification in developing countries by reducing the size of the systems required. For example, the combined power requirement of a highly efficient color TV, four DC light emitting diode (LED) lamps, a mobile phone charger, and a radio is approximately 18 watts and can be supported by a small solar power system (at 27 watts peak, Wp). Price declines and efficiency advances in LED technology are already enabling rapidly increased use of small off-grid lighting systems in Africamore » and Asia. Similar progress is also possible for larger household-scale solar home systems that power appliances such as lights, TVs, fans, radios, and mobile phones. When super-efficient appliances are used, the total cost of solar home systems and their associated appliances can be reduced by as much as 50%. The results vary according to the appliances used with the system. These findings have critical relevance for efforts to provide modern energy services to the 1.2 billion people worldwide without access to the electrical grid and one billion more with unreliable access. However, policy and market support are needed to realize rapid adoption of super-efficient appliances.« less

Orthodontic brackets removal under shear and tensile bond strength resistance tests - a comparative test between light sources

NASA Astrophysics Data System (ADS)

Silva, P. C. G.; Porto-Neto, S. T.; Lizarelli, R. F. Z.; Bagnato, V. S.

2008-03-01

We have investigated if a new LEDs system has enough efficient energy to promote efficient shear and tensile bonding strength resistance under standardized tests. LEDs 470 ± 10 nm can be used to photocure composite during bracket fixation. Advantages considering resistance to tensile and shear bonding strength when these systems were used are necessary to justify their clinical use. Forty eight human extracted premolars teeth and two light sources were selected, one halogen lamp and a LEDs system. Brackets for premolar were bonded through composite resin. Samples were submitted to standardized tests. A comparison between used sources under shear bonding strength test, obtained similar results; however, tensile bonding test showed distinct results: a statistical difference at a level of 1% between exposure times (40 and 60 seconds) and even to an interaction between light source and exposure time. The best result was obtained with halogen lamp use by 60 seconds, even during re-bonding; however LEDs system can be used for bonding and re-bonding brackets if power density could be increased.

Non-viral gene therapy for bone tissue engineering.

PubMed

Wegman, Fiona; Oner, F Cumhur; Dhert, Wouter J A; Alblas, Jacqueline

2013-01-01

The possibilities of using gene therapy for bone regeneration have been extensively investigated. Improvements in the design of new transfection agents, combining vectors and delivery/release systems to diminish cytotoxicity and increase transfection efficiencies have led to several successful in vitro, ex vivo and in vivo strategies. These include growth factor or short interfering ribonucleic acid (siRNA) delivery, or even enzyme replacement therapies, and have led to increased osteogenic differentiation and bone formation in vivo. These results provide optimism to consider use in humans with some of these gene-delivery strategies in the near future.

Transparent perovskite light-emitting diodes by employing organic-inorganic multilayer transparent top electrodes

NASA Astrophysics Data System (ADS)

Liang, Junqing; Guo, Xiaoyang; Song, Li; Lin, Jie; Hu, Yongsheng; Zhang, Nan; Liu, Xingyuan

2017-11-01

Perovskite light-emitting diodes (PeLEDs) have attracted much attention in the past two years due to their high photoluminescence quantum efficiencies and wavelength tuneable characteristics. In this work, transparent PeLEDs (TPeLEDs) have been reported with organic-inorganic multilayer transparent top electrodes that have more convenient control of the organic/electrode interface. By optimizing the thickness of the MoO3 layer in the top electrode, the best average transmittance of 47.21% has been obtained in the TPeLED in the wavelength range of 380-780 nm. In addition, the TPeLED exhibits a maximum luminance of 6380 cd/m2, a maximum current efficiency (CE) of 3.50 cd/A, and a maximum external quantum efficiency (EQE) of 0.85% from the bottom side together with a maximum luminance of 3380 cd/m2, a maximum CE of 1.47 cd/A, and a maximum EQE of 0.36% from the top side. The total EQE of the TPeLED is about 86% of that of the reference device, indicating efficient TPeLED achieved in this work, which could have significant contribution to PeLEDs for see-through displays.

Scalable Light Module for Low-Cost, High-Efficiency Light- Emitting Diode Luminaires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarsa, Eric

2015-08-31

During this two-year program Cree developed a scalable, modular optical architecture for low-cost, high-efficacy light emitting diode (LED) luminaires. Stated simply, the goal of this architecture was to efficiently and cost-effectively convey light from LEDs (point sources) to broad luminaire surfaces (area sources). By simultaneously developing warm-white LED components and low-cost, scalable optical elements, a high system optical efficiency resulted. To meet program goals, Cree evaluated novel approaches to improve LED component efficacy at high color quality while not sacrificing LED optical efficiency relative to conventional packages. Meanwhile, efficiently coupling light from LEDs into modular optical elements, followed by optimallymore » distributing and extracting this light, were challenges that were addressed via novel optical design coupled with frequent experimental evaluations. Minimizing luminaire bill of materials and assembly costs were two guiding principles for all design work, in the effort to achieve luminaires with significantly lower normalized cost ($/klm) than existing LED fixtures. Chief project accomplishments included the achievement of >150 lm/W warm-white LEDs having primary optics compatible with low-cost modular optical elements. In addition, a prototype Light Module optical efficiency of over 90% was measured, demonstrating the potential of this scalable architecture for ultra-high-efficacy LED luminaires. Since the project ended, Cree has continued to evaluate optical element fabrication and assembly methods in an effort to rapidly transfer this scalable, cost-effective technology to Cree production development groups. The Light Module concept is likely to make a strong contribution to the development of new cost-effective, high-efficacy luminaries, thereby accelerating widespread adoption of energy-saving SSL in the U.S.« less

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

PubMed

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

DTIC Science & Technology

2007-12-01

realized with silicon due to its indirect band gap that results in poor quantum efficiency . The first LEDs and laser diodes were developed with...deep UV (λ < 340 nm) still face many challenges and have low internal quantum efficiency . Jong Kyu Kim et al. have developed a light emitting triode...LET) to try to overcome some of the challenges and 16 have produced a lighting device with increased quantum efficiency (16). AlxGa1-xN has been

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

PubMed Central

Titkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.

2017-01-01

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs. PMID:29156543

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-07-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun; Leung, Benjamin

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantagesmore » of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.« less

Influence of interconnection on the long-term reliability of UV LED packages

NASA Astrophysics Data System (ADS)

Nieland, S.; Mitrenga, D.; Karolewski, D.; Brodersen, O.; Ortlepp, T.

2017-02-01

High power LEDs have conquered the mass market in recent years. Besides the main development focus to achieve higher productivity in the field of visible semiconductor LED processing, the wavelength range is further enhanced by active research and development in the direction of UVA / UVB / UVC. UVB and UVC LEDs are new and promising due to their numerous advantages. UV LEDs emit in a near range of one single emission peak with a width (FWHM) below 15 nm compared to conventional mercury discharge lamps and xenon sources, which show broad spectrums with many emission peaks over a wide range of wavelengths. Furthermore, the UV LED size is in the range of a few hundred microns and offers a high potential of significant system miniaturization. Of course, LED efficiency, lifetime and output power have to be increased [1]. Lifetime limiting issues of UVB/UVC-LED are the very high thermal stress in the chip resulting from the higher forward voltages (6-10 V @ 350 mA), the lower external quantum efficiency, below 10 % (most of the power disappears as heat), and the thermal resistance Rth of conventional LED packages being not able to dissipate these large amounts of heat for spreading. Beside the circuit boards and submounts which should have maximum thermal conductivity, the dimension of contacts as well as the interconnection of UV LED to the submount/package determinates the resolvable amount of heat [2]. In the paper different innovative interconnection techniques for UVC-LED systems will be discussed focused on the optimization of thermal conductivity in consideration of the assembly costs. Results on thermal simulation for the optimal contact dimensions and interconnections will be given. In addition, these theoretical results will be compared with results on electrical characterization as well as IR investigations on real UV LED packages in order to give recommendations for optimal UV LED assembly.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Houqiang; Lu, Zhijian; Zhao, Yuji

We study the low efficiency droop characteristics of semipolar InGaN light-emitting diodes (LEDs) using modified rate equation incoporating the phase-space filling (PSF) effect where the results on c-plane LEDs are also obtained and compared. Internal quantum efficiency (IQE) of LEDs was simulated using a modified ABC model with different PSF filling (n{sub 0}), Shockley-Read-Hall (A), radiative (B), Auger (C) coefficients and different active layer thickness (d), where the PSF effect showed a strong impact on the simulated LED efficiency results. A weaker PSF effect was found for low-droop semipolar LEDs possibly due to small quantum confined Stark effect, short carriermore » lifetime, and small average carrier density. A very good agreement between experimental data and the theoretical modeling was obtained for low-droop semipolar LEDs with weak PSF effect. These results suggest the low droop performance may be explained by different mechanisms for semipolar LEDs.« less

Differential pulse amplitude modulation for multiple-input single-output OWVLC

NASA Astrophysics Data System (ADS)

Yang, S. H.; Kwon, D. H.; Kim, S. J.; Son, Y. H.; Han, S. K.

2015-01-01

White light-emitting diodes (LEDs) are widely used for lighting due to their energy efficiency, eco-friendly, and small size than previously light sources such as incandescent, fluorescent bulbs and so on. Optical wireless visible light communication (OWVLC) based on LED merges lighting and communications in applications such as indoor lighting, traffic signals, vehicles, and underwater communications because LED can be easily modulated. However, physical bandwidth of LED is limited about several MHz by slow time constant of the phosphor and characteristics of device. Therefore, using the simplest modulation format which is non-return-zero on-off-keying (NRZ-OOK), the data rate reaches only to dozens Mbit/s. Thus, to improve the transmission capacity, optical filtering and pre-, post-equalizer are adapted. Also, high-speed wireless connectivity is implemented using spectrally efficient modulation methods: orthogonal frequency division multiplexing (OFDM) or discrete multi-tone (DMT). However, these modulation methods need additional digital signal processing such as FFT and IFFT, thus complexity of transmitter and receiver is increasing. To reduce the complexity of transmitter and receiver, we proposed a novel modulation scheme which is named differential pulse amplitude modulation. The proposed modulation scheme transmits different NRZ-OOK signals with same amplitude and unit time delay using each LED chip, respectively. The `N' parallel signals from LEDs are overlapped and directly detected at optical receiver. Received signal is demodulated by power difference between unit time slots. The proposed scheme can overcome the bandwidth limitation of LEDs and data rate can be improved according to number of LEDs without complex digital signal processing.

Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

NASA Astrophysics Data System (ADS)

May, Brelon J.; Selcu, Camelia M.; Sarwar, A. T. M. G.; Myers, Roberto C.

2018-02-01

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting as they offer distinct photonic advantages and enable direct integration on a variety of different substrates. However, for practical nanowire LEDs to be realized, uniform electrical injection must be achieved through large numbers of nanowire LEDs. Here, we investigate the effect of the integration of a III-Nitride polarization engineered tunnel junction (TJ) in nanowire LEDs on Si on both the overall injection efficiency and nanoscale current uniformity. By using conductive atomic force microscopy (cAFM) and current-voltage (IV) analysis, we explore the link between the nanoscale nonuniformities and the ensemble devices which consist of many diodes wired in parallel. Nanometer resolved current maps reveal that the integration of a TJ on n-Si increases the amount of current a single nanowire can pass at a given applied bias by up to an order of magnitude, with the top 10% of wires passing more than ×3.5 the current of nanowires without a TJ. This manifests at the macroscopic level as a reduction in threshold voltage by more than 3 V and an increase in differential conductance as a direct consequence of the integration of the TJ. These results show the utility of cAFM to quantitatively probe the electrical inhomogeneities in as-grown nanowire ensembles without introducing uncertainty due to additional device processing steps, opening the door to more rapid development of nanowire ensemble based photonics.

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2017-11-01

The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in previous models, the topology of LED die and contacts are shown to significantly affect current spreading and light output characteristics in top emitting devices. We propose an approach for calculating the current transfer length describing current spreading. We show that an inter-digitated electrode configuration with distance between the contact pad and the edge of p-n junction equal to transfer length in the current spreading ITO layer allows one to increase the optical area of LED chip, as compared to the physical area of the die, light output power, and therefore, the LED efficiency for a given current density. A detailed study of unpassivated LEDs also shows that current transfer lengths longer than the distance between the contact pad and the edge of p-n junction leads to increasing surface leakage that can only be remedied with proper passivation.

High-output LED-based light engine for profile lighting fixtures with high color uniformity using freeform reflectors.

PubMed

Gadegaard, Jesper; Jensen, Thøger Kari; Jørgensen, Dennis Thykjær; Kristensen, Peter Kjær; Søndergaard, Thomas; Pedersen, Thomas Garm; Pedersen, Kjeld

2016-02-20

In the stage lighting and entertainment market, light engines (LEs) for lighting fixtures are often based on high-intensity discharge (HID) bulbs. Switching to LED-based light engines gives possibilities for fast switching, additive color mixing, a longer lifetime, and potentially, more energy-efficient systems. The lumen output of a single LED is still not sufficient to replace an HID source in high-output profile fixtures, but combining multiple LEDs can create an LE with a similar output, but with added complexity. This paper presents the results of modeling and testing such a light engine. Custom ray-tracing software was used to design a high-output red, green and blue LED-based light engine with twelve CBT-90 LEDs using a dual-reflector principle. The simulated optical system efficiency was 0.626 with a perfect (R=1) reflector coating for light delivered on a target surface through the entire optical system. A profile lighting fixture prototype was created, and provided an output of 6744 lumen and an efficiency of 0.412. The lower efficiency was mainly due to a non-optimal reflector coating, and the optimized design is expected to reach a significantly higher efficiency.

Thermal management of the remote phosphor layer in LED systems

NASA Astrophysics Data System (ADS)

Perera, Indika U.; Narendran, Nadarajah

2013-09-01

Generally in a white light-emitting diode (LED), a phosphor slurry is placed around the semiconductor chip or the phosphor is conformally coated over the chip to covert the narrowband, short-wavelength radiation to a broadband white light. Over the past few years, the remote-phosphor method has provided significant improvement in overall system efficiency by reducing the photons absorbed by the LED chip and reducing the phosphor quenching effects. However, increased light output and smaller light engine requirements are causing high radiant energy density on the remotephosphor plates, thus heating the phosphor layer. The phosphor layer temperature rise increases when the phosphor material conversion efficiency decreases. Phosphor layer heating can negatively affect performance in terms of luminous efficacy, color shift, and life. In such cases, the performance of remote-phosphor LED lighting systems can be improved by suitable thermal management to reduce the temperature of the phosphor layer. To verify this hypothesis and to understand the factors that influence the reduction in temperature, a phosphor layer was embedded in a perforated metal heatsink to remove the heat; the parameters that influence the effectiveness of heat extraction were then studied. These parameters included the heatsink-to-phosphor layer interface area and the thermal conductivity of the heatsink. The temperature of the remote-phosphor surface was measured using IR thermography. The results showed that when the heat conduction area of the heatsink increased, the phosphor layer temperature decreased, but at the same time the overall light output of the remote phosphor light engine used in this study decreased due to light absorption by the metal areas.

Strong enhancement of emission efficiency in GaN light-emitting diodes by plasmon-coupled light amplification of graphene

NASA Astrophysics Data System (ADS)

Kim, Jong Min; Kim, Sung; Hwang, Sung Won; Kim, Chang Oh; Shin, Dong Hee; Kim, Ju Hwan; Jang, Chan Wook; Kang, Soo Seok; Hwang, Euyheon; Choi, Suk-Ho; El-Gohary, Sherif H.; Byun, Kyung Min

2018-02-01

Recently, we have demonstrated that excitation of plasmon-polaritons in a mechanically-derived graphene sheet on the top of a ZnO semiconductor considerably enhances its light emission efficiency. If this scheme is also applied to device structures, it is then expected that the energy efficiency of light-emitting diodes (LEDs) increases substantially and the commercial potential will be enormous. Here, we report that the plasmon-induced light coupling amplifies emitted light by ˜1.6 times in doped large-area chemical-vapor-deposition-grown graphene, which is useful for practical applications. This coupling behavior also appears in GaN-based LEDs. With AuCl3-doped graphene on Ga-doped ZnO films that is used as transparent conducting electrodes for the LEDs, the average electroluminescence intensity is 1.2-1.7 times enhanced depending on the injection current. The chemical doping of graphene may produce the inhomogeneity in charge densities (i.e., electron/hole puddles) or roughness, which can play a role as grating couplers, resulting in such strong plasmon-enhanced light amplification. Based on theoretical calculations, the plasmon-coupled behavior is rigorously explained and a method of controlling its resonance condition is proposed.

LED therapy or cryotherapy between exercise intervals in Wistar rats: anti-inflammatory and ergogenic effects.

PubMed

da Costa Santos, Vanessa Batista; de Paula Ramos, Solange; Milanez, Vinícius Flávio; Corrêa, Julio Cesar Molina; de Andrade Alves, Rubens Igor; Dias, Ivan Frederico Lupiano; Nakamura, Fábio Yuzo

2014-03-01

The aim of this study was to test, between two bouts of exercise, the effects of light-emitting diode (LED) therapy and cryotherapy regarding muscle damage, inflammation, and performance. Male Wistar rats were allocated in four groups: control, passive recovery (PR), cryotherapy (Cryo), and LED therapy. The animals were submitted to 45 min of swimming exercise followed by 25 min of recovery and then a second bout of either 45 min of exercise (muscle damage analysis) or time to exhaustion (performance). During the rest intervals, the rats were kept in passive rest (PR), submitted to cold water immersion (10 min, 10 °C) or LED therapy (940 nm, 4 J/cm(2)) of the gastrocnemius muscle. Blood samples were collected to analyze creatine kinase activity (CK), C-reactive protein (CRP), and leukocyte counts. The soleus muscles were evaluated histologically. Time to exhaustion was recorded during the second bout of exercise. After a second bout of 45 min, the results demonstrated leukocytosis in the PR and Cryo groups. Neutrophil counts were increased in all test groups. CK levels were increased in the Cryo group. CRP was increased in PR animals. The PR group presented a high frequency of necrosis, but the LED group had fewer necrotic areas. Edema formation was prevented, and fewer areas of inflammatory cells were observed in the LED group. The time to exhaustion was greater in both the LED and Cryo groups, without differences in CK levels. CRP was decreased in LED animals. We conclude that LED therapy and cryotherapy can improve performance, although LED therapy is more efficient in preventing muscle damage and local and systemic inflammation.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

PubMed Central

Jin, Jie; Mi, Chenziyi; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2017-01-01

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. PMID:29072611

Efficiency of endoscopy units can be improved with use of discrete event simulation modeling.

PubMed

Sauer, Bryan G; Singh, Kanwar P; Wagner, Barry L; Vanden Hoek, Matthew S; Twilley, Katherine; Cohn, Steven M; Shami, Vanessa M; Wang, Andrew Y

2016-11-01

Background and study aims: The projected increased demand for health services obligates healthcare organizations to operate efficiently. Discrete event simulation (DES) is a modeling method that allows for optimization of systems through virtual testing of different configurations before implementation. The objective of this study was to identify strategies to improve the daily efficiencies of an endoscopy center with the use of DES. Methods: We built a DES model of a five procedure room endoscopy unit at a tertiary-care university medical center. After validating the baseline model, we tested alternate configurations to run the endoscopy suite and evaluated outcomes associated with each change. The main outcome measures included adequate number of preparation and recovery rooms, blocked inflow, delay times, blocked outflows, and patient cycle time. Results: Based on a sensitivity analysis, the adequate number of preparation rooms is eight and recovery rooms is nine for a five procedure room unit (total 3.4 preparation and recovery rooms per procedure room). Simple changes to procedure scheduling and patient arrival times led to a modest improvement in efficiency. Increasing the preparation/recovery rooms based on the sensitivity analysis led to significant improvements in efficiency. Conclusions: By applying tools such as DES, we can model changes in an environment with complex interactions and find ways to improve the medical care we provide. DES is applicable to any endoscopy unit and would be particularly valuable to those who are trying to improve on the efficiency of care and patient experience.

Efficiency of endoscopy units can be improved with use of discrete event simulation modeling

PubMed Central

Sauer, Bryan G.; Singh, Kanwar P.; Wagner, Barry L.; Vanden Hoek, Matthew S.; Twilley, Katherine; Cohn, Steven M.; Shami, Vanessa M.; Wang, Andrew Y.

2016-01-01

Background and study aims: The projected increased demand for health services obligates healthcare organizations to operate efficiently. Discrete event simulation (DES) is a modeling method that allows for optimization of systems through virtual testing of different configurations before implementation. The objective of this study was to identify strategies to improve the daily efficiencies of an endoscopy center with the use of DES. Methods: We built a DES model of a five procedure room endoscopy unit at a tertiary-care university medical center. After validating the baseline model, we tested alternate configurations to run the endoscopy suite and evaluated outcomes associated with each change. The main outcome measures included adequate number of preparation and recovery rooms, blocked inflow, delay times, blocked outflows, and patient cycle time. Results: Based on a sensitivity analysis, the adequate number of preparation rooms is eight and recovery rooms is nine for a five procedure room unit (total 3.4 preparation and recovery rooms per procedure room). Simple changes to procedure scheduling and patient arrival times led to a modest improvement in efficiency. Increasing the preparation/recovery rooms based on the sensitivity analysis led to significant improvements in efficiency. Conclusions: By applying tools such as DES, we can model changes in an environment with complex interactions and find ways to improve the medical care we provide. DES is applicable to any endoscopy unit and would be particularly valuable to those who are trying to improve on the efficiency of care and patient experience. PMID:27853739

Optimized optical wireless channel for indoor and intra-vehicle communications: power distribution and SNR analysis

NASA Astrophysics Data System (ADS)

Shaaban, Rana; Faruque, Saleh

2018-01-01

Light emitting diodes - LEDs are modernizing the indoor illumination and replacing current incandescent and fluorescent lamps rapidly. LEDs have multiple advantages such as extremely high energy efficient, longer lifespan, and lower heat generation. Due to the ability to switch to different light intensity at a very fast rate, LED has given rise to a unique communication technology (visible light communication - VLC) used for high speed data transmission. By studying various kinds of commonly used VLC channel analysis: diffuse and line of sight channels, we presented a simply improved indoor and intra-vehicle visible light communication transmission model. Employing optical wireless communications within the vehicle, not only enhance user mobility, but also alleviate radio frequency interference, and increase efficiency by lowering the complexity of copper cabling. Moreover, a solution to eliminate ambient noise caused by environmental conditions is examined by using optical differential receiver. The simulation results show the improved received power distribution and signal to noise ratio - SNR.

Charge Transport between Coupling Colloidal Perovskite Quantum Dots Assisted by Functional Conjugated Ligands.

PubMed

Dai, Jinfei; Xi, Jun; Li, Lu; Zhao, JingFeng; Shi, Yifei; Zhang, Wenwen; Ran, Chenxin; Jiao, Bo; Hou, Xun; Duan, Xinhua; Wu, Zhaoxin

2018-05-14

Long alkyl-chain capping ligands are indispensable for preparing stable colloidal quantum dots. However, its insulating feature blocks efficient carrier transport among QDs, leading to inferior performance in light-emitting diodes (LEDs). The trade-off between conductivity and colloidal stability of QDs has now been overcome. Methylamine lead bromide (MAPbBr 3 ) QDs with a conjugated alkyl-amine, 3-phenyl-2-propen-1-amine (PPA), as ligands were prepared. Owing to electron cloud overlapping and the delocalization effect of conjugated molecules, the conductivity and carrier mobility of PPA-QDs films increased almost 22 times over that of OA-QD films without compromising colloidal stability and photoluminescence. PPA-QDs LEDs exhibit a maximum current efficiency of 9.08 cd A -1 , which is 8 times of that of OA-QDs LEDs (1.14 cd A -1 ). This work provides critical solution for the poor conductivity of QDs in applications of energy-related devices. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

NASA Astrophysics Data System (ADS)

Liu, Chao; Ren, Zhi-Wei; Chen, Xin; Zhao, Bi-Jun; Wang, Xing-Fu; Yin, Yi-An; Li, Shu-Ti

2013-05-01

P-InGaN/p-GaN superlattices (SLs) are developed for a hole accumulation layer (HAL) of a blue light emitting diode (LED). Free hole concentration as high as 2.6 × 1018 cm-3 is achieved by adjusting the Cp2Mg flow rate during the growth of p-InGaN/p-GaN SLs. The p-InGaN/p-GaN SLs with appropriate Cp2Mg flow rates are then incorporated between the multi-quantum well and AlGaN electron blocking layer as an HAL, which leads to the enhancement of light output power by 29% at 200 mA, compared with the traditional LED without such SL HAL. Meanwhile, the efficiency droop is also effectively alleviated in the LED with the SL HAL. The improved performance is attributed to the increased hole injection efficiency, and the reduced electron leakage by inserting the p-type SL HAL.

Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

PubMed

Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

2016-06-28

Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

Demonstration of a simplified optical mouse lighting module by integrating the non-Lambertian LED chip and the free-form surface.

PubMed

Pan, Jui-Wen; Tu, Sheng-Han

2012-05-20

A cost-effective, high-throughput, and high-yield method for the efficiency enhancement of an optical mouse lighting module is proposed. We integrated imprinting technology and free-form surface design to obtain a lighting module with high illumination efficiency and uniform intensity distribution. The imprinting technique can increase the light extraction efficiency and modulate the intensity distribution of light-emitting diodes. A modulated light source was utilized to add a compact free-form surface element to create a lighting module with 95% uniformity and 80% optical efficiency.

Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN.

PubMed

Cho, Chu-Young; Kwon, Min-Ki; Lee, Sang-Jun; Han, Sang-Heon; Kang, Jang-Won; Kang, Se-Eun; Lee, Dong-Yul; Park, Seong-Ju

2010-05-21

We demonstrate the surface plasmon-enhanced blue light-emitting diodes (LEDs) using Ag nanoparticles embedded in p-GaN. A large increase in optical output power of 38% is achieved at an injection current of 20 mA due to an improved internal quantum efficiency of the LEDs. The enhancement of optical output power is dependent on the density of the Ag nanoparticles. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and localized surface plasmons in Ag nanoparticles embedded in p-GaN.

Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

DOE PAGES

Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; ...

2015-04-01

The influence of a dilute In xGa 1-xN (x~0.03) underlayer (UL) grown below a single In 0.16Ga 0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that themore » improved radiative efficiency resulted from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

Interfacial engineering with ultrathin poly (9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) layer for high efficient perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Lin, Chunyan; Chen, Ping; Xiong, ZiYang; Liu, Debei; Wang, Gang; Meng, Yan; Song, Qunliang

2018-02-01

Organic-inorganic hybrid perovskites have attracted great attention in the field of lighting and display due to their very high color purity and low-cost solution-process. Researchers have done a lot of work in realizing high performance electroluminescent devices. However, the current efficiency (CE) of methyl-ammonium lead halide perovskite light-emitting diodes (PeLEDs) still needs to be improved. Herein, we demonstrate the enhanced performance of PeLEDs through introducing an ultrathin poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) buffer layer between poly(3,4-ethylendioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and CH3NH3PbBr3 perovskite. Compared to the reference device without PFO, the optimal device luminous intensity, the maximum CE, and the maximum external quantum efficiency increases from 8139 cd m-2 to 30 150 cd m-2, from 7.20 cd A-1 (at 6.8 V) to 10.05 cd A-1 (at 6.6 V), and from 1.73% to 2.44%, respectively. The ultrathin PFO layer not only reduces the exciton quenching at the interface between the hole-transport layer and emission layer, but also passivates the shallow-trap ensure increasing hole injection, as well as increases the coverage of perovskite film.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

Shelf life of fresh meat products under LED or fluorescent lighting.

PubMed

Steele, K S; Weber, M J; Boyle, E A E; Hunt, M C; Lobaton-Sulabo, A S; Cundith, C; Hiebert, Y H; Abrolat, K A; Attey, J M; Clark, S D; Johnson, D E; Roenbaugh, T L

2016-07-01

Enhanced pork loin chops, beef longissimus lumborum steaks, semimembranosus steaks (superficial and deep portions), ground beef, and ground turkey were displayed under light emitting diode (LED) and fluorescent (FLS) lighting in two multi-shelf, retail display cases with identical operating parameters. Visual and instrumental color, internal product temperature, case temperature, case cycling, thiobarbituric acid reactive substances (TBARS), and Enterobacteriaceae and aerobic plate counts were evaluated. Under LED, beef products (except the deep portion of beef semimembranosus steaks) showed less (P<0.05) visual discoloration. Pork loin chops had higher (P<0.05) L* values for LED lighting. Other than beef longissimus lumborum steaks, products displayed under LED lights had colder internal temperatures than products under FLS lights (P<0.05). Under LED, pork loin chops, ground turkey, and beef semimembranosus steaks had higher (P<0.05) values for TBARS. LED provides colder case and product temperatures, more case efficiency, and extended color life by at least 0.5d for longissimus and semimembranosus steaks; however, some LED cuts showed increased lipid oxidation. Copyright © 2016. Published by Elsevier Ltd.

Structural control of InP/ZnS core/shell quantum dots enables high-quality white LEDs.

PubMed

Kumar, Baskaran Ganesh; Sadeghi, Sadra; Melikov, Rustamzhon; Aria, Mohammad Mohammadi; Jalali, Houman Bahmani; Ow-Yang, Cleva W; Nizamoglu, Sedat

2018-08-24

Herein, we demonstrate that the structural and optical control of InP-based quantum dots (QDs) can lead to high-performance light-emitting diodes (LEDs). Zinc sulphide (ZnS) shells passivate the InP QD core and increase the quantum yield in green-emitting QDs by 13-fold and red-emitting QDs by 8-fold. The optimised QDs are integrated in the liquid state to eliminate aggregation-induced emission quenching and we fabricated white LEDs with a warm, neutral and cool-white appearance by the down-conversion mechanism. The QD-functionalized white LEDs achieve luminous efficiency (LE) up to 14.7 lm W -1 and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell QDs enable 23-fold enhancement in LE of white LEDs compared to ones containing only QDs of InP core.

Highway Safety Information System guidebook for the Utah state data files. Volume 2 : single variable tabulations

DOT National Transportation Integrated Search

1996-07-01

The increasingly sophisticated demands placed on transportation planning models by the 1990 Clean Air Act Amendments (CAAA), the 1991 Intermodal Surface Transportation Efficiency Act (ISTEA), and to a lesser extent some earlier legislation, have led ...

Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

NASA Astrophysics Data System (ADS)

Römer, Friedhard; Deppner, Marcus; Andreev, Zhelio; Kölper, Christopher; Sabathil, Matthias; Strassburg, Martin; Ledig, Johannes; Li, Shunfeng; Waag, Andreas; Witzigmann, Bernd

2012-02-01

We present a computational study on the anisotropic luminescence and the efficiency of a core-shell type nanowire LED based on GaN with InGaN active quantum wells. The physical simulator used for analyzing this device integrates a multidimensional drift-diffusion transport solver and a k . p Schrödinger problem solver for quantization effects and luminescence. The solution of both problems is coupled to achieve self-consistency. Using this solver we investigate the effect of dimensions, design of quantum wells, and current injection on the efficiency and luminescence of the core-shell nanowire LED. The anisotropy of the luminescence and re-absorption is analyzed with respect to the external efficiency of the LED. From the results we derive strategies for design optimization.

Power management of direct-view LED backlight for liquid crystal display

NASA Astrophysics Data System (ADS)

Lee, Xuan-Hao; Lin, Che-Chu; Chang, Yu-Yu; Chen, He-Xiang; Sun, Ching-Cherng

2013-03-01

In this paper, we present a study of management of power in function of luminous efficacy of white LED as well as the efficiency enhancement of the direct-view backlight with photon recycling. A cavity efficiency as high as 90.7% is demonstrated for a direct-view backlight with photon recycling. In the future, with a 90% backlight cavity, luminous efficacy of 200 lm/W for white LEDs, and a transmission efficiency of 10% for the liquid crystal panel, the required power of LEDs could be only 16 W. Up to 85% energy saving could be achieved in comparison to the power of the current liquid crystal display.

Solution processable inverted structure ZnO-organic hybrid heterojuction white LEDs

NASA Astrophysics Data System (ADS)

Bano, N.; Hussain, I.; Soomro, M. Y.; EL-Naggar, A. M.; Albassam, A. A.

2018-05-01

Improving luminance efficiency and colour purity are the most important challenges for zinc oxide (ZnO)-organic hybrid heterojunction light emitting diodes (LEDs), affecting their large area applications. If ZnO-organic hybrid heterojunction white LEDs are fabricated by a hydrothermal method, it is difficult to obtain pure and stable blue emission from PFO due to the presence of an undesirable green emission. In this paper, we present an inverted-structure ZnO-organic hybrid heterojunction LED to avoid green emission from PFO, which mainly originates during device processing. With this configuration, each ZnO nanorod (NR) forms a discrete p-n junction; therefore, large-area white LEDs can be designed without compromising the junction area. The configuration used for this novel structure is glass/ZnO NRs/PFO/PEDOT:PSS/L-ITO, which enables the development of efficient, large-area and low-cost hybrid heterojunction LEDs. Inverted-structure ZnO-organic hybrid heterojunction white LEDs offer several improvements in terms of brightness, size, colour, external quantum efficiency and a wider applicability as compared to normal architecture LEDs.

Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier

NASA Astrophysics Data System (ADS)

Prajoon, P.; Anuja Menokey, M.; Charles Pravin, J.; Ajayan, J.; Rajesh, S.; Nirmal, D.

2018-04-01

The advantage of InGaN multiple Quantum well (MQW) Light emitting diode (LED) on a SiC substrate with compositionally step graded GaN/InAlN/GaN multi-layer barrier (MLB) is studied. The Internal quantum efficiency, Optical power, current-voltage characteristics, spontaneous emission rate and carrier distribution profile in the active region are investigated using Sentaurus TCAD simulation. An analytical model is also developed to describe the QW carrier injection efficiency, by including carrier leakage mechanisms like carrier overflow, thermionic emission and tunnelling. The enhanced electron confinement, reduced carrier asymmetry, and suppressed carrier overflow in the active region of the MLB MQW LED leads to render a superior performance than the conventional GaN barrier MQW LED. The simulation result also elucidates the efficiency droop behaviour in the MLB MQW LED, it suggests that the efficiency droop effect is remarkably improved when the GaN barrier is replaced with GaN/InAlN/GaN MLB barrier. The analysis shows a dominating behaviour of carrier escape mechanism due to tunnelling. Moreover, the lower lattice mismatching of SiC substrate with GaN epitaxial layer is attributed with good crystal quality and reduced polarization effect, ultimately enhances the optical performance of the LEDs.

Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.

PubMed

Seo, Hong-Kyu; Kim, Hobeom; Lee, Jaeho; Park, Min-Ho; Jeong, Su-Hun; Kim, Young-Hoon; Kwon, Sung-Joo; Han, Tae-Hee; Yoo, Seunghyup; Lee, Tae-Woo

2017-03-01

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of ethanol-gasoline blends on small engine generator energy efficiency and exhaust emission.

PubMed

Lin, Wen-Yinn; Chang, Yuan-Yi; Hsieh, You-Ru

2010-02-01

This study was focused on fuel energy efficiency and pollution analysis of different ratios of ethanol-gasoline blended fuels (E0, E3, E6, and E9) under different loadings. In this research, the experimental system consisted of a small engine generator, a particulate matter measurement system, and an exhaust gas analyzer system. Different fuels, unleaded gasoline, and ethanol-gasoline blends (E0, E3, E6, and E9) were used to study their effects on the exhaust gas emission and were expressed as thermal efficiency of the small engine generator energy efficiency. The results suggested that particle number concentration increased as the engine loading increased; however, it decreased as the ethanol content in the blend increased. While using E6 as fuel, the carbon monoxide (CO) concentration was less than other fuels (E0, E3, and E9) for each engine loading. The average of CO concentration reduction by using E3, E6, and E9 is 42, 86, and 83%, respectively. Using an ethanol-gasoline blend led to a significant reduction in exhaust emissions by approximately 78.7, 97.5, and 89.46% of the mean average values of hydrocarbons (HCs) with E3, E6, and E9 fuels, respectively, for all engine loadings. Using an ethanol-gasoline blend led to a significant reduction in exhaust emissions by approximately 35, 86, and 77% of the mean average values of nitrogen oxides (NOx) with E3, E6, and E9 fuels, respectively, at each engine loading. The E6 fuel gave the best results of the exhaust emissions, and the E9 fuel gave the best results of the particle emissions and engine performance. The thermal efficiency of the small engine generator increased as the ethanol content in the blend increased and as the engine loading increased.

Long-Term Effects of Red- and Blue-Light Emitting Diodes on Leaf Anatomy and Photosynthetic Efficiency of Three Ornamental Pot Plants.

PubMed

Zheng, Liang; Van Labeke, Marie-Christine

2017-01-01

Light quality critically affects plant development and growth. Development of light-emitting diodes (LEDs) enables the use of narrow band red and/or blue wavelengths as supplementary lighting in ornamental production. Yet, long periods under these wavelengths will affect leaf morphology and physiology. Leaf anatomy, stomatal traits, and stomatal conductance, leaf hydraulic conductance (K leaf ), and photosynthetic efficiency were investigated in three ornamental pot plants, namely Cordyline australis (monocot), Ficus benjamina (dicot, evergreen leaves), and Sinningia speciosa (dicot, deciduous leaves) after 8 weeks under LED light. Four light treatments were applied at 100 μmol m -2 s -1 and a photoperiod of 16 h using 100% red (R), 100% blue (B), 75% red with 25% blue (RB), and full spectrum white light (W), respectively. B and RB resulted in a greater maximum quantum yield (F v /F m ) and quantum efficiency (Φ PSII ) in all species compared to R and W and this correlated with a lower biomass under R. B increased the stomatal conductance compared with R. This increase was linked to an increasing stomatal index and/or stomatal density but the stomatal aperture area was unaffected by the applied light quality. Leaf hydraulic conductance (K leaf ) was not significantly affected by the applied light qualities. Blue light increased the leaf thickness of F. benjamina , and a relative higher increase in palisade parenchyma was observed. Also in S. speciosa , increase in palisade parenchyma was found under B and RB, though total leaf thickness was not affected. Palisade parenchyma tissue thickness was correlated to the leaf photosynthetic quantum efficiency (Φ PSII ). In conclusion, the role of blue light addition in the spectrum is essential for the normal anatomical leaf development which also impacts the photosynthetic efficiency in the three studied species.

Searching for the optimal synthesis parameters of InP/CdxZn1-xSe quantum dots when combined with a broad band phosphor to optimize color rendering and efficacy of a hybrid remote phosphor white LED

NASA Astrophysics Data System (ADS)

Ryckaert, Jana; Correia, António; Smet, Kevin; Tessier, Mickael D.; Dupont, Dorian; Hens, Zeger; Hanselaer, Peter; Meuret, Youri

2017-09-01

Combining traditional phosphors with a broad emission spectrum and non-scattering quantum dots with a narrow emission spectrum can have multiple advantages for white LEDs. It allows to reduce the amount of scattering in the wavelength conversion element, increasing the efficiency of the complete system. Furthermore, the unique possibility to tune the emission spectrum of quantum dots allows to optimize the resulting LED spectrum in order to achieve optimal color rendering properties for the light source. However, finding the optimal quantum dot properties to achieve optimal efficacy and color rendering is a non-trivial task. Instead of simply summing up the emission spectra of the blue LED, phosphor and quantum dots, we propose a complete simulation tool that allows an accurate analysis of the final performance for a range of different quantum dot synthesis parameters. The recycling of the reflected light from the wavelength conversion element by the LED package is taken into account, as well as the re-absorption and the associated red-shift. This simulation tool is used to vary two synthesis parameters (core size and cadmium fraction) of InP/CdxZn1-xSe quantum dots. We find general trends for the ideal quantum dot that should be combined with a specific YAG:Ce broad band phosphor to obtain optimal efficiency and color rendering for a white LED with a specific pumping LED and recycling cavity, with a desired CCT of 3500K.

Carrier lifetimes in polar InGaN-based LEDs

NASA Astrophysics Data System (ADS)

Wang, Lai; Jin, Jie; Hao, Zhibiao; Luo, Yi

2018-02-01

Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Efficiency and rumen responses in younger and older Holstein heifers limit-fed diets of differing energy density.

PubMed

Zanton, G I; Heinrichs, A J

2016-04-01

The objective of this study was to evaluate the effects of limit feeding diets of different predicted energy density on the efficiency of utilization of feed and nitrogen and rumen responses in younger and older Holstein heifers. Eight rumen-cannulated Holstein heifers (4 heifers beginning at 257 ± 7 d, hereafter "young," and 4 heifers beginning at 610 ± 16 d, hereafter "old") were limit-fed high [HED; 2.64 Mcal/kg of dry matter (DM), 15.31% crude protein (CP)] or low (LED; 2.42 Mcal/kg of DM, 14.15% CP) energy density diets according to a 4-period, split-plot Latin square design with 28-d periods. Diets were limit-fed to provide isonitrogenous and isoenergetic intake on a rumen empty body weight (BW) basis at a level predicted to support approximately 800 g/d of average daily gain. During the last 7d of each period, rumen contents were subsampled over a 24-h period, rumen contents were completely evacuated, and total collection of feces and urine was made over 4d. Intakes of DM and water were greater for heifers fed LED, although, by design, calculated intake of metabolizable energy did not differ between age groups or diets when expressed relative to rumen empty BW. Rumen pH was lower, ammonia (NH3-N) concentration tended to be higher, and volatile fatty acids (VFA) concentration was not different for HED compared with LED and was unaffected by age group. Rumen content mass was greater for heifers fed LED and for old heifers, so when expressing rumen fermentation responses corrected for this difference in pool size, NH3-N pool size was not different between diets and total moles of VFA in the rumen were greater for heifers fed LED, whereas these pool sizes were greater for old heifers. Total-tract digestibility of potentially digestible neutral detergent fiber (NDF) was greater in heifers fed LED and for young heifers, whereas the fractional rate of ruminal passage and digestion of NDF were both greater in heifers fed LED. Digestibility of N was greater for heifers fed HED, but was unaffected by age group, whereas the efficiency of N retention was greater for heifers fed HED and for young heifers. Manure output was reduced in heifers fed HED, but the effect was largest in old heifers. Results confirm previous studies in which young heifers utilize N more efficiently than old heifers, primarily through greater efficiency of postabsorptive metabolism. Results also support the concept of limit feeding HED diets as a potential means to reduce manure excretion and increase nitrogen efficiency. Copyright © 2016 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

Replicative manufacturing of complex lighting optics by non-isothermal glass molding

NASA Astrophysics Data System (ADS)

Kreilkamp, Holger; Vu, Anh Tuan; Dambon, Olaf; Klocke, Fritz

2016-09-01

The advantages of LED lighting, especially its energy efficiency and the long service life have led to a wide distribution of LED technology in the world. However, in order to make fully use of the great potential that LED lighting offers, complex optics are required to distribute the emitted light from the LED efficiently. Nowadays, many applications use polymer optics which can be manufactured at low costs. However, due to ever increasing luminous power, polymer optics reach their technological limits. Due to its outstanding properties, especially its temperature resistance, resistance against UV radiation and its long term stability, glass is the alternative material of choice for the use in LED optics. This research is introducing a new replicative glass manufacturing approach, namely non-isothermal glass molding (NGM) which is able to manufacture complex lighting optics in high volumes at competitive prices. The integration of FEM simulation at the early stage of the process development is presented and helps to guarantee a fast development cycle. A coupled thermo-mechanical model is used to define the geometry of the glass preform as well as to define the mold surface geometry. Furthermore, simulation is used to predict main process outcomes, especially in terms of resulting form accuracy of the molded optics. Experiments conducted on a commercially available molding machine are presented to validate the developed simulation model. Finally, the influence of distinct parameters on important process outcomes like form accuracy, surface roughness, birefringence, etc. is discussed.

Closing oil palm yield gaps among Indonesian smallholders through industry schemes, pruning, weeding and improved seeds

PubMed Central

Soliman, T.; Lim, F. K. S.; Lee, J. S. H.

2016-01-01

Oil palm production has led to large losses of valuable habitats for tropical biodiversity. Sparing of land for nature could in theory be attained if oil palm yields increased. The efficiency of oil palm smallholders is below its potential capacity, but the factors determining efficiency are poorly understood. We employed a two-stage data envelopment analysis approach to assess the influence of agronomic, supply chain and management factors on oil palm production efficiency in 190 smallholders in six villages in Indonesia. The results show that, on average, yield increases of 65% were possible and that fertilizer and herbicide use was excessive and inefficient. Adopting industry-supported scheme management practices, use of high-quality seeds and higher pruning and weeding rates were found to improve efficiency. Smallholder oil palm production intensification in Indonesia has the capacity to increase production by 26%, an equivalent of 1.75 million hectares of land. PMID:27853605

The use of poplar during a two-year induced phytoextraction of metals from contaminated agricultural soils.

PubMed

Komárek, Michael; Tlustos, Pavel; Száková, Jirina; Chrastný, Vladislav

2008-01-01

The efficiency of poplar (Populus nigra L.xPopulus maximowiczii Henry.) was assessed during a two-year chemically enhanced phytoextraction of metals from contaminated soils. The tested metal mobilizing agents were EDTA (ethylenediaminetetraacetic acid) and NH4Cl. EDTA was more efficient than chlorides in solubilizing metals (especially Pb) from the soil matrix. The application of chlorides only increased the solubility of Cd and Zn. However, the increased uptake of metals after the application of higher concentrations of mobilizing agents was associated with low biomass yields of the poplar plants and the extraction efficiencies after the two vegetation periods were thus comparable to the untreated plants. Additionally, the application of mobilizing agents led to phytotoxicity effects and increased mobility of metals. Higher phytoextraction efficiencies were observed for Cd and Zn compared to Pb and Cu. Poplars are therefore not suitable for chemically enhanced phytoextraction of metals from severely contaminated agricultural soils.

Closing oil palm yield gaps among Indonesian smallholders through industry schemes, pruning, weeding and improved seeds.

PubMed

Soliman, T; Lim, F K S; Lee, J S H; Carrasco, L R

2016-08-01

Oil palm production has led to large losses of valuable habitats for tropical biodiversity. Sparing of land for nature could in theory be attained if oil palm yields increased. The efficiency of oil palm smallholders is below its potential capacity, but the factors determining efficiency are poorly understood. We employed a two-stage data envelopment analysis approach to assess the influence of agronomic, supply chain and management factors on oil palm production efficiency in 190 smallholders in six villages in Indonesia. The results show that, on average, yield increases of 65% were possible and that fertilizer and herbicide use was excessive and inefficient. Adopting industry-supported scheme management practices, use of high-quality seeds and higher pruning and weeding rates were found to improve efficiency. Smallholder oil palm production intensification in Indonesia has the capacity to increase production by 26%, an equivalent of 1.75 million hectares of land.

Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

NASA Astrophysics Data System (ADS)

Romanov, I. S.; Prudaev, I. A.; Kopyev, V. V.

2018-06-01

The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

PubMed Central

Kim, Jonghak; Woo, Heeje; Joo, Kisu; Tae, Sungwon; Park, Jinsub; Moon, Daeyoung; Park, Sung Hyun; Jang, Junghwan; Cho, Yigil; Park, Jucheol; Yuh, Hwankuk; Lee, Gun-Do; Choi, In-Suk; Nanishi, Yasushi; Han, Heung Nam; Char, Kookheon; Yoon, Euijoon

2013-01-01

Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy for high efficiency LEDs by incorporating silica hollow nanospheres (S-HNS). In this strategy, S-HNSs were introduced as a monolayer on a sapphire substrate and the subsequent growth of GaN by metalorganic chemical vapor deposition results in improved crystal quality due to nano-scale lateral epitaxial overgrowth. Moreover, well-defined voids embedded at the GaN/sapphire interface help scatter lights effectively for improved light extraction, and reduce wafer bowing due to partial alleviation of compressive stress in GaN. The incorporation of S-HNS into LEDs is thus quite advantageous in achieving high efficiency LEDs for solid-state lighting. PMID:24220259

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

NASA Astrophysics Data System (ADS)

Williams, Logan; Kioupakis, Emmanouil

2017-11-01

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75-3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

A receptor-targeted nanocomplex vector system optimized for respiratory gene transfer.

PubMed

Tagalakis, Aristides D; McAnulty, Robin J; Devaney, James; Bottoms, Stephen E; Wong, John B; Elbs, Martin; Writer, Michele J; Hailes, Helen C; Tabor, Alethea B; O'Callaghan, Christopher; Jaffe, Adam; Hart, Stephen L

2008-05-01

Synthetic vectors for cystic fibrosis (CF) gene therapy are required that efficiently and safely transfect airway epithelial cells, rather than alveolar epithelial cells or macrophages, and that are nonimmunogenic, thus allowing for repeated delivery. We have compared several vector systems against these criteria including GL67, polyethylenimine (PEI) 22 and 25 kd and two new, synthetic vector formulations, comprising a cationic, receptor-targeting peptide K(16)GACSERSMNFCG (E), and the cationic liposomes (L) DHDTMA/DOPE or DOSEP3/DOPE. The lipid and peptide formulations self assemble into receptor-targeted nanocomplexes (RTNs) LED-1 and LED-2, respectively, on mixing with plasmid (D). LED-1 transfected airway epithelium efficiently, while LED-2 and GL67 preferentially transfected alveolar cells. PEI transfected airway epithelial cells with high efficiency, but was more toxic to the mice than the other formulations. On repeat dosing, LED-1 was equally as effective as the single dose, while GL67 was 30% less effective and PEI 22 kd displayed a 90% reduction of efficiency on repeated delivery. LED-1 thus was the only formulation that fulfilled the criteria for a CF gene therapy vector while GL67 and LED-2 may be appropriate for other respiratory diseases. Opportunities for PEI depend on a solution to its toxicity problems. LED-1 formulations were stable to nebulization, the most appropriate delivery method for CF.

Phosphor chessboard packaging for white LEDs in high efficiency and high color performance

NASA Astrophysics Data System (ADS)

Nguyen, Quang-Khoi; Chang, Yu-Yu; Lu, Chun-Yan; Yang, Tsung-Hsun; Chung, Te-Yuan; Sun, Ching-Cherng

2016-09-01

We performed the simulation of white LEDs packaging with different chessboard structures of white light converting phosphor layer covered on GaN die chip. Three different types of chessboard structures are called type 1, type 2 and type 3, respectively. The result of investigation according to the phosphor thickness show the increasing of thickness of phosphor layer are, the decreasing of output blue light power are. Meanwhile, the changes of yellow light are neglect. Type 3 shows highest packaging efficiency of 74.3 % compares with packaging efficiency of type 2 and type 1 (72.5 % and 71.3 %, respectively). Type 3 also shows the most effect of forward light. Attention that the type 3 chessboard structure gets packaging efficiency of 74.3 % at color temperature of daylight as well as high saving of phosphor amount. The color temperatures of three types of chessboard structure are higher than 5000 K, so they are suitable for lighting purpose. The angular correlate color temperature deviation (ACCTD) of type 1, type 2 and type 3 are 6500K, 11500K and 17000K, respectively.

A nurse led model of chronic disease care - an interim report.

PubMed

Eley, Diann S; Del Mar, Chris B; Patterson, Elizabeth; Synnott, Robyn L; Baker, Peter G; Hegney, Desley

2008-12-01

Chronic condition management in general practice is projected to account for 50% of all consultations by 2051. General practices under present workforce conditions will be unable to meet this demand. Nurse led collaborative care models of chronic disease management have been successful overseas and are proposed as one solution. This article provides an interim report on a prospective randomised trial to investigate the acceptability, cost effectiveness and feasibility of a nurse led model of care for chronic conditions in Australian general practice. A qualitative study focused on the impact of this model of care through the perceptions of practice staff from one urban and one regional practice in Queensland, and one Victorian rural practice. Primary benefits of the collaborative care model focused on increased efficiency and communication between practice staff and patients. The increased degree of patient self responsibility was noted by all and highlights the motivational aspect of chronic disease management.

Investigation of uniformity field generated from freeform lens with UV LED exposure system

NASA Astrophysics Data System (ADS)

Ciou, F. Y.; Chen, Y. C.; Pan, C. T.; Lin, P. H.; Lin, P. H.; Hsu, F. T.

2015-03-01

In the exposure process, the intensity and uniformity of light in the exposure area directly influenced the precision of products. UV-LED (Ultraviolet Light-Emitting Diode) exposure system was established to reduce the radiation leakage and increase the energy efficiency for energy saving. It is a trend that conventional mercury lamp could be replaced with UV-LED exposure system. This study was based on the law of conservation of energy and law of refraction of optical field distributing on the target plane. With these, a freeform lens with uniform light field of main exposure area could be designed. The light outside the exposure area could be concentrated into the area to improve the intensity of light. The refraction index and UV transmittance of Polydimethylsiloxane (PDMS) is 1.43 at 385 nm wavelength and 85-90%, respectively. The PDMS was used to fabricate the optics lens for UV-LEDs. The average illumination and the uniformity could be obtained by increasing the number of UV-LEDs and the spacing of different arrangement modes. After exposure process with PDMS lens, about 5% inaccuracy was obtained. Comparing to 10% inaccuracy of general exposure system, it shows that it is available to replace conventional exposure lamp with using UV-LEDs.

Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag/p-GaN double grating

NASA Astrophysics Data System (ADS)

Xie, Ruijie; Li, Zhiquan; Li, Xin; Gu, Erdan; Niu, Liyong; Sha, Xiaopeng

2018-07-01

In this paper, a new type of light-emitting diodes (LEDs) structure is designed to enhance the light emission efficiency of GaN-based LEDs. The structure mainly includes Ag grating, ITO layer and p-GaN grating. The principle of stimulating the localized surface plasmon to improve the luminous characteristics of the LED by using this structure is discussed. Based on the COMSOL software, the finite element method is used to simulate the LED structure. The normalized radiated powers, the normalized absorbed powers under different wavelength and geometric parameters, and the distribution of the electric field with the particular geometric parameters are obtained. The simulation results show that with a local ITO thickness of 32 nm, an etching depth of 29 nm, a grating period of 510 nm and a duty ratio of 0.5, the emission intensity of the designed GaN-based LED structure has increased by nearly 55 times than the ordinary LED providing a reliable foundation for the development of high-performance GaN-based LEDs.

Processing of fullerene-single wall carbon nanotube complex for bulk heterojunction photovoltaic cells

NASA Astrophysics Data System (ADS)

Li, Cheng; Mitra, Somenath

2007-12-01

A fullerene-single wall carbon nanotube (C60-SWCNT) complex is used as a component of the photoactive layer in bulk heterojunction photovoltaic cells. This complex synthesized by microwave-assisted reaction takes advantage of the electron accepting feature of C60 and the high electron transport capability of SWCNTs. In this paper, quantum efficiency enhancement by increasing light absorption and by bringing about appropriate morphological rearrangements via solvent vapor treatment and thermal annealing is presented. The optimum combination of these steps led to an increase in efficiency by as much as 87.5%.

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111).

PubMed

Nguyen, H P T; Zhang, S; Cui, K; Han, X; Fathololoumi, S; Couillard, M; Botton, G A; Mi, Z

2011-05-11

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm(2). The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes.

PubMed

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young; Lee, Byeongdu; Lee, Dong Ryeol

2017-09-07

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX 3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Improved Efficiency and Enhanced Color Quality of Light-Emitting Diodes with Quantum Dot and Organic Hybrid Tandem Structure.

PubMed

Zhang, Heng; Feng, Yuanxiang; Chen, Shuming

2016-10-03

Light-emitting diodes based on organic (OLEDs) and colloidal quantum dot (QLEDs) are widely considered as next-generation display technologies because of their attractive advantages such as self-emitting and flexible form factor. The OLEDs exhibit relatively high efficiency, but their color saturation is quite poor compared with that of QLEDs. In contrast, the QLEDs show very pure color emission, but their efficiency is lower than that of OLEDs currently. To combine the advantages and compensate for the weaknesses of each other, we propose a hybrid tandem structure which integrates both OLED and QLED in a single device architecture. With ZnMgO/Al/HATCN interconnecting layer, hybrid tandem LEDs are successfully fabricated. The demonstrated hybrid tandem devices feature high efficiency and high color saturation simultaneously; for example, the devices exhibit maximum current efficiency and external quantum efficiency of 96.28 cd/A and 25.90%, respectively. Meanwhile, the full width at half-maximum of the emission spectra is remarkably reduced from 68 to 44 nm. With the proposed hybrid tandem structure, the color gamut of the displays can be effectively increased from 81% to 100% NTSC. The results indicate that the advantages of different LED technologies can be combined in a hybrid tandem structure.

Effects of the led therapy on the global DNA methylation and the expression of Dnmt1 and Dnmt3a genes in a rat model of skin wound healing.

PubMed

Gomes, Marcus Vinícius de Matos; Manfredo, Marcelo Henrique; Toffoli, Leandro Vaz; Castro-Alves, Daniellen Christine; do Nascimento, Lucas Magnoni; da Silva, Wyllian Rafael; Kashimoto, Roberto Kiyoshi; Rodrigues, Gelson Marcos; Estrada, Viviane Batista; Andraus, Rodrigo Antonio; Pelosi, Gislaine Garcia

2016-09-01

The use of light emitting diodes (LED) as a therapeutic resource for wound healing has increased over the last years; however, little is still known about the molecular pathways associated to LED exposure. In the present study, we verified the effects of LED therapy on DNA methylation and expression of the DNA methyltransferase (Dnmt) genes, Dnmt1 and Dnmt3a, in an in vivo model of epithelial wound healing. Male Wistar rats were submitted to epithelial excision in the dorsal region and subsequently distributed within the experimental groups: group 1, animals that received irradiation of 0.8 J/cm(2) of LED (604 nm); group 2, animals that received 1.6 J/cm(2) of LED (604 nm); control (CTL), animals not submitted to therapeutic intervention. LED applications were performed during 7 days, and tissues from the periphery of the wound area were obtained for molecular analysis. The Image-J software was used for analysis of the wound area. DNA methylation was evaluated by ELISA-based method and gene expressions were quantified by real-time PCR. Decrease on global DNA methylation profile was observed in all experimental groups (CTL, 1, and 2) revealing the participation of DNA methylation in the healing process. Significant decrease in the wound area accompanied by increase in the Dnmt3a expression was associated to group 2. Based on our findings, we propose that DNA methylation is an important molecular mechanism associated to wound healing and that irradiation with 1.6 J/cm(2) of LED evokes an increase in the expression of the Dnmt3a that might associates to the efficiency of the epithelial wound healing.

Current development and patents on high-brightness white LED for illumination.

PubMed

Pang, Wen-Yuan; Lo, Ikai; Hsieh, Chia-Ho; Hsu, Yu-Chi; Chou, Ming-Chi; Shih, Cheng-Hung

2010-01-01

In this paper, we reviewed the current development and patents for the application of high-brightness and high-efficiency white light-emitting diode (LED). The high-efficiency GaN nanostructures, such as disk, pyramid, and rod were grown on LiAlO(2) substrate by plasma-assisted molecular-beam epitaxy, and a model was developed to demonstrate the growth of the GaN nanostructures. Based on the results, the GaN disk p-n junction was designed for the application of high brightness and high efficiency white LED.

Enhanced Reciprocal Interactions between Molecular Stresses and Optoelectronic Energy Transfers for High Efficiency Long Life Devices Based on Conjugated Polymers

DTIC Science & Technology

2014-10-15

led to lower PL efficiencies. The latter, however, posed no problems for solar cells aplications . Furthermore, the molecular dipoles composed of...illuminated under the light of the energy falling in the absorption range of the conjugated polymer, the polymer chain mobility decreased...the other hand, increased concomitantly (Figs. 33, 35). The driving force for the molecular flows is the diffusion of the mobile PS chains toward

ELiXIR—Solid-State Luminaire With Enhanced Light Extraction by Internal Reflection

NASA Astrophysics Data System (ADS)

Allen, Steven C.; Steckl, Andrew J.

2007-06-01

A phosphor-converted light-emitting diode (pcLED) luminaire featuring enhanced light extraction by internal reflection (ELiXIR) with efficacy of 60 lm/W producing 18 lumens of yellowish green light at 100 mA is presented. The luminaire consists of a commercial blue high power LED, a polymer hemispherical shell lens with interior phosphor coating, and planar aluminized reflector. High extraction efficiency of the phosphor-converted light is achieved by separating the phosphor from the LED and using internal reflection to steer the light away from lossy reflectors and the LED package and out of the device. At 10 and 500 mA, the luminaire produces 2.1 and 66 lumens with efficacies of 80 and 37 lm/W, respectively. Technological improvements over existing commercial LEDs, such as more efficient pcLED packages or, alternatively, higher efficiency green or yellow for color mixing, will be essential to achieving 150 200 lm/W solid-state lighting. Advances in both areas are demonstrated.

LED Provides Effective and Efficient Parking Area Lighting at the NAVFAC Engineering Service Center

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-08-12

U.S. Department of Energy (DOE) Federal Energy Management Program (FEMP) emerging technology case study showcasing LED lighting to improve energy efficiency in parking areas at the NAVFAC Engineering Services Center.

Enhancing the Performance of CdSe/CdS Dot-in-Rod Light-Emitting Diodes via Surface Ligand Modification.

PubMed

Rastogi, Prachi; Palazon, Francisco; Prato, Mirko; Di Stasio, Francesco; Krahne, Roman

2018-02-14

The surface ligands on colloidal nanocrystals (NCs) play an important role in the performance of NC-based optoelectronic devices such as photovoltaic cells, photodetectors, and light-emitting diodes (LEDs). On one hand, the NC emission depends critically on the passivation of the surface to minimize trap states that can provide nonradiative recombination channels. On the other hand, the electrical properties of NC films are dominated by the ligands that constitute the barriers for charge transport from one NC to its neighbor. Therefore, surface modifications via ligand exchange have been employed to improve the conductance of NC films. However, in LEDs, such surface modifications are more critical because of their possible detrimental effects on the emission properties. In this work, we study the role of surface ligand modifications on the optical and electrical properties of CdSe/CdS dot-in-rods (DiRs) in films and investigate their performance in all-solution-processed LEDs. The DiR films maintain high photoluminescence quantum yield, around 40-50%, and their electroluminescence in the LED preserves the excellent color purity of the photoluminescence. In the LEDs, the ligand exchange boosted the luminance, reaching a fourfold increase from 2200 cd/m 2 for native surfactants to 8500 cd/m 2 for the exchanged aminoethanethiol (AET) ligands. Moreover, the efficiency roll-off, operational stability, and shelf life are significantly improved, and the external quantum efficiency is modestly increased from 5.1 to 5.4%. We relate these improvements to the increased conductivity of the emissive layer and to the better charge balance of the electrically injected carriers. In this respect, we performed ultraviolet photoelectron spectroscopy (UPS) to obtain a deeper insight into the band alignment of the LED structure. The UPS data confirm similar flat-band offsets of the emitting layer to the electron- and hole-transport layers in the case of AET ligands, which translates to more symmetric barriers for charge injection of electrons and holes. Furthermore, the change in solubility of the NCs induced by the ligand exchange allows for a layer-by-layer deposition process of the DiR films, which yields excellent homogeneity and good thickness control and enables the fabrication of all the LED layers (except for cathode and anode) by spin-coating.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Energy Efficiency and Demand Response for Residential Applications

NASA Astrophysics Data System (ADS)

Wellons, Christopher J., II

The purpose of this thesis is to analyze the costs, feasibility and benefits of implementing energy efficient devices and demand response programs to a residential consumer environment. Energy efficiency and demand response are important for many reasons, including grid stabilization. With energy demand increasing, as the years' pass, the drain on the grid is going up. There are two key solutions to this problem, increasing supply by building more power plants and decreasing demand during peak periods, by increasing participation in demand response programs and by upgrading residential and commercial customers to energy efficient devices, to lower demand throughout the day. This thesis focuses on utilizing demand response methods and energy efficient device to reduce demand. Four simulations were created to analyze these methods. These simulations show the importance of energy efficiency and demand response participation to help stabilize the grid, integrate more alternative energy resources, and reduce emissions from fossil fuel generating facilities. The results of these numerical analyses show that demand response and energy efficiency can be beneficial to consumers and utilities. With demand response being the most beneficial to the utility and energy efficiency, specifically LED lighting, providing the most benefits to the consumer.

DEVELOPMENT, DESIGN AND CONSUMER TESTING OF MARKETABLE RESIDENTIAL LED LIGHT LUMINAIRES

EPA Science Inventory

Developing marketable LED luminaires poses challenges, even though LEDs are energy-efficient and an ecological alternative to conventionally lighting. Challenges include: perceptions that the color rendition of LEDs is unacceptable to the public; numbers of LEDs must be grou...

Efficient electroluminescent cooling with a light-emitting diode coupled to a photovoltaic cell (Conference Presentation)

NASA Astrophysics Data System (ADS)

Xiao, Tianyao P.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2017-02-01

The new breakthrough in photovoltaics, exemplified by the slogan "A great solar cell has to be a great light-emitting diode (LED)", has led to all the major new solar cell records, while also leading to extraordinary LED efficiency. As an LED becomes very efficient in converting its electrical input into light, the device cools as it operates because the photons carry away entropy as well as energy. If these photons are absorbed in a photovoltaic (PV) cell, the generated electricity can be used to provide part of the electrical input that drives the LED. Indeed, the LED/PV cell combination forms a new type of heat engine with light as the working fluid. The electroluminescent refrigerator requires only a small amount of external electricity to provide cooling, leading to a high coefficient of performance. We present the theoretical performance of such a refrigerator, in which the cool side (LED) is radiatively coupled to the hot side (PV) across a vacuum gap. The coefficient of performance is maximized by using a highly luminescent material, such as GaAs, together with device structures that optimize extraction of the luminescence. We consider both a macroscopic vacuum gap and a sub-wavelength gap; the latter allows for evanescent coupling of photons between the devices, potentially providing a further enhancement to the efficiency of light extraction. Using device assumptions based on the current record-efficiency solar cells, we show that electroluminescent cooling can, in certain regimes of cooling power, achieve a higher coefficient of performance than thermoelectric cooling.

Integration of non-Lambertian LED and reflective optical element as efficient street lamp.

PubMed

Pan, Jui-Wen; Tu, Sheng-Han; Sun, Wen-Shing; Wang, Chih-Ming; Chang, Jenq-Yang

2010-06-21

A cost effective, high throughput, and high yield method for the increase of street lamp potency was proposed in this paper. We integrated the imprinting technology and the reflective optical element to obtain a street lamp with high illumination efficiency and without glare effect. The imprinting technique can increase the light extraction efficiency and modulate the intensity distribution in the chip level. The non-Lambertian light source was achieved by using imprinting technique. The compact reflective optical element was added to efficiently suppress the emitting light intensity with small emitting angle for the uniform of illumination intensity and excluded the light with high emitting angle for the prevention of glare. Compared to the conventional street lamp, the novel design has 40% enhancement in illumination intensity, the uniform illumination and the glare effect elimination.

Seed Cotton Mass Flow Measurement in the Gin

USDA-ARS?s Scientific Manuscript database

Seed cotton mass flow measurement is necessary for the development of improved gin process control systems that can increase gin efficiency and improve fiber quality. Previous studies led to the development of a seed cotton mass flow rate sensor based on the static pressure drop across the blowbox, ...

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

NASA Astrophysics Data System (ADS)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

NASA Astrophysics Data System (ADS)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

Effect of defects on the electrical/optical performance of gallium nitride based junction devices

NASA Astrophysics Data System (ADS)

Ferdous, Mohammad Shahriar

Commercial GaN based electronic and optoelectronic devices possess a high density (107-109 cm-2) of threading dislocations (TDs) because of the large mismatch in the lattice constant and the thermal expansion coefficient between the epitaxial layer structure and the substrate. In spite of these dislocations, high brightness light emitting diodes (LEDs) utilizing InGaN or AlGaN multiple quantum wells (MQWs) and with an external quantum efficiency of more than 40%, have already been achieved. This high external quantum efficiency in the presence of a high density of dislocations has been explained by carrier localization induced by indium fluctuations in the quantum well. TDs have been found to increase the reverse leakage current in InGaN based LEDs and to shorten the operating lifetime of InGaN MQW/GaN/AlGaN laser diodes. Thus it is important that the TD density is further reduced. It remains unclear how the TDs interact with the device to cause the effects mentioned above, hence the careful and precise characterization of threading defects and their effects on the electrical and optical performances of InGaN/GaN MQW LEDs is needed. This investigation will be useful not only from the point of view of device optimization but also to develop a clear understanding of the physical processes associated with TDs and especially with their effect on leakage current. We have employed photoelectrochemical (PEC) etching to accurately measure the dislocation density initially in home-grown GaN-based epitaxial structures and recently in InGaN/GaN MQW LEDs fabricated from commercial grade epitaxial structures that were supplied by our industrial collaborators. Measuring the electrical and electroluminescence (EL) characteristics of these devices has revealed correlations between some aspects of the LED behavior and the TD density, and promises to allow a deeper understanding of the role of threading dislocations to be elucidated. We observed that the LED reverse leakage current increased exponentially, and electroluminescence intensity decreased by 22%, as the TD density in the LEDs increased from 1.7 x 107 cm-2 to 2 x 108 cm-2. Forward voltage remained almost constant with the increase of TD density. A model of carrier conduction via hopping through defect related states, was found to provide an excellent fit to the experimental I-V data and provides a useful basis for understanding carrier conduction in the presence of TDs.

LED pumped Nd:YAG laser development program

NASA Technical Reports Server (NTRS)

Farmer, G. I.; Kiang, Y. C.; Lynch, R. J.

1973-01-01

The results of a development program for light emitting diode (LED) pumped Nd:YAG lasers are described. An index matching method to increase the coupling efficiency of the laser is described. A solid glass half-cylinder of 5.0 by 5.6 centimeters was used for index matching and also as a pumping cavity reflector. The laser rods were 1.5 by 56 millimeters with dielectric coatings on both end surfaces. The interfaces between the diode array, glass cylinder, and laser rod were filled with viscous fluid of refractive index n = 1.55. Experiments performed with both the glass cylinder and a gold coated stainless steel reflector of the same dimensions under the same operating conditions indicate that the index matching cylinder gave 159 to 200 percent improvement of coupling efficiency over the metal reflector at various operating temperatures.

A Multilevel Analysis of Institutional Fiscal Autonomy and Its Effect on Affordability, Operating Efficiency, and Minority Access at Public Colleges and Universities

ERIC Educational Resources Information Center

Glass, Christine J.

2012-01-01

In recent years, an unstable funding environment for state higher education systems has led to a trend of increasing institutional fiscal autonomy in exchange for reductions in appropriations. With the growing concern that reducing state oversight will result in increased tuition and spending levels, this study was designed to provide a clearer…

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

NASA Astrophysics Data System (ADS)

Morawiec, Seweryn; Sarzała, Robert P.; Nakwaski, Włodzimierz

2013-11-01

Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantum-confined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (11 22) crystallographic substrate orientation (inclination angle of 58∘ to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to high-quality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In0.3Ga0.7N/GaN QW LED grown on the semipolar (11 22) substrate has been found as currently the optimal LED structure emitting green radiation.

ZnO-nanorods: A possible white LED phosphor

NASA Astrophysics Data System (ADS)

Sarangi, Sachindra Nath; T., Arun; Ray, Dinseh K.; Sahoo, Pratap Kumar; Nozaki, Shinji; Sugiyama, Noriyuki; Uchida, Kazuo

2017-05-01

The white light-emitting diodes (LEDs) have drawn much attention to replace conventional lighting sources because of low energy consumption, high light efficiency and long lifetime. Although the most common approach to produce white light is to combine a blue LED chip and a yellow phosphor, such a white LED cannot be used for a general lighting application, which requires a broad luminescence spectrum in the visible wavelength range. We have successfully chemically synthesized the ZnO nanorods showing intense broad luminescence in the visible wavelength range and made a white LED using the ZnO nanorods as phosphor excited with a blue LED. Their lengths and diameters were 2 - 10 μm and 200 - 800 nm, respectively. The wurtzite structure was confirmed by the x-ray diffraction measurement. The PL spectrum obtained by exciting the ZnO nanorods with the He-Cd laser has two peaks, one associated with the near band-edge recombination and the other with recombination via defects. The peak intensity of the near band-edge luminescence at 388 nm is much weaker than that of the defect-related luminescence. The latter luminescence peak ranges from 450 to 850 nm and broad enough to be used as a phosphor for a white LED. A white LED has been fabricated using a blue LED with 450 nm emission and ZnO nanorod powders. The LED performances show a white light emission and the electroluminescence measurement shows a stiff increase in white light intensity with increasing blue LED current. The Commission International de1'Eclairage (CIE) chromaticity colour coordinates of 450 nm LED pumped white emission shows a coordinate of (0.31, 0.32) for white LED at 350 mA. These results indicate that ZnO nanorods provides an alternate and effective approach to achieve high-performance white LEDs and also other optoelectronic devices.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes.

PubMed

Yao, Yung-Chi; Yang, Zu-Po; Hwang, Jung-Min; Chuang, Yi-Lun; Lin, Chia-Ching; Haung, Jing-Yu; Chou, Chun-Yang; Sheu, Jinn-Kong; Tsai, Meng-Tsan; Lee, Ya-Ju

2016-02-28

ZnO nanorods (NRs) and Ag nanoparticles (NPs) are known to enhance the luminescence of light-emitting diodes (LEDs) through the high directionality of waveguide mode transmission and efficient energy transfer of localized surface plasmon (LSP) resonances, respectively. In this work, we have demonstrated Ag NP-incorporated n-ZnO NRs/p-GaN heterojunctions by facilely hydrothermally growing ZnO NRs on Ag NP-covered GaN, in which the Ag NPs were introduced and randomly distributed on the p-GaN surface to excite the LSP resonances. Compared with the reference LED, the light-output power of the near-band-edge (NBE) emission (ZnO, λ = 380 nm) of our hybridized structure is increased almost 1.5-2 times and can be further modified in a controlled manner by varying the surface morphology of the surrounding medium of the Ag NPs. The improved light-output power is mainly attributed to the LSP resonance between the NBE emission of ZnO NRs and LSPs in Ag NPs. We also observed different behaviors in the electroluminescence (EL) spectra as the injection current increases for the treatment and reference LEDs. This observation might be attributed to the modification of the energy band diagram for introducing Ag NPs at the interface between n-ZnO NRs and p-GaN. Our results pave the way for developing advanced nanostructured LED devices with high luminescence efficiency in the UV emission regime.

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Young, Nathan G.

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

Energy efficient LED layout optimization for near-uniform illumination

NASA Astrophysics Data System (ADS)

Ali, Ramy E.; Elgala, Hany

2016-09-01

In this paper, we consider the problem of designing energy efficient light emitting diodes (LEDs) layout while satisfying the illumination constraints. Towards this objective, we present a simple approach to the illumination design problem based on the concept of the virtual LED. We formulate a constrained optimization problem for minimizing the power consumption while maintaining a near-uniform illumination throughout the room. By solving the resulting constrained linear program, we obtain the number of required LEDs and the optimal output luminous intensities that achieve the desired illumination constraints.

High-luminance LEDs replace incandescent lamps in new applications

NASA Astrophysics Data System (ADS)

Evans, David L.

1997-04-01

The advent of high luminance AlInGaP and InGaN LED technologies has prompted the use of LED devices in new applications formally illuminated by incandescent lamps. The luminous efficiencies of these new LED technologies equals or exceeds that attainable with incandescent sources, with reliability factors that far exceed those of incandescent sources. The need for a highly efficient, dependable, and cost effective replacement for incandescent lamps is being fulfilled with high luminance LED lamps. This paper briefly described some of the new applications incorporating high luminance LED lamps, traffic signals and roadway signs for traffic management, automotive exterior lighting, active matrix and full color displays for commercial advertising, and commercial aircraft panel lighting and military aircraft NVG compatible lighting.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.

PubMed

Lai, Fang-I; Yang, Jui-Fu

2013-05-17

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

PubMed

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

Spatial layout optimization design of multi-type LEDs lighting source based on photoelectrothermal coupling theory

NASA Astrophysics Data System (ADS)

Xue, Lingyun; Li, Guang; Chen, Qingguang; Rao, Huanle; Xu, Ping

2018-03-01

Multiple LED-based spectral synthesis technology has been widely used in the fields of solar simulator, color mixing, and artificial lighting of plant factory and so on. Generally, amounts of LEDs are spatially arranged with compact layout to obtain the high power density output. Mutual thermal spreading among LEDs will produce the coupled thermal effect which will additionally increase the junction temperature of LED. Affected by the Photoelectric thermal coupling effect of LED, the spectrum of LED will shift and luminous efficiency will decrease. Correspondingly, the spectral synthesis result will mismatch. Therefore, thermal management of LED spatial layout plays an important role for multi-LEDs light source system. In the paper, the thermal dissipation network topology model considering the mutual thermal spreading effect among the LEDs is proposed for multi-LEDs system with various types of power. The junction temperature increment cased by the thermal coupling has the great relation with the spatial arrangement. To minimize the thermal coupling effect, an optimized method of LED spatial layout for the specific light source structure is presented and analyzed. The results showed that layout of LED with high-power are arranged in the corner and low-power in the center. Finally, according to this method, it is convenient to determine the spatial layout of LEDs in a system having any kind of light source structure, and has the advantages of being universally applicable to facilitate adjustment.

Impact assessment of energy-efficient lighting in patients with lupus erythematosus: a pilot study.

PubMed

Fenton, L; Dawe, R; Ibbotson, S; Ferguson, J; Silburn, S; Moseley, H

2014-03-01

Patients with lupus erythematosus (LE) are often abnormally photosensitive. Ultraviolet (UV) exposure can not only induce cutaneous lesions but may also contribute to systemic flares and disease progression. Various forms of energy-efficient lighting have been shown to emit UV radiation. To determine the effects of these emissions on individuals with LE. This assessment investigated cutaneous responses to repeated exposures from three types of lighting: compact fluorescent lamp (CFL), light-emitting diode (LED) and energy-efficient halogen (EEH). The subjects were 15 patients with LE and a control group of five healthy volunteers. No cutaneous LE lesions were induced by any of the light sources. Delayed skin erythema was induced at the site of CFL irradiation in six of the 15 patients with LE and two of the five healthy subjects. Erythema was increased in severity and more persistent in patients with LE. One patient with LE produced a positive delayed erythema to the EEH. A single patient with LE produced immediate abnormal erythemal responses to the CFL, LED and EEH. Further investigation revealed that this patient also had solar urticaria. All other subjects had negative responses to LED exposure. Compact fluorescent lamps emit UV that can induce skin erythema in both individuals with LE and healthy individuals when situated in close proximity. However, this occurs to a greater extent and is more persistent in patients with LE. EEHs emit UVA that can induce erythema in patients with LE. LEDs provide a safer alternative light source without risk of UV exposure. © 2013 British Association of Dermatologists.

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

NASA Astrophysics Data System (ADS)

Titkov, Ilya E.; Yadav, Amit; Zerova, Vera L.; Zulonas, Modestas; Tsatsulnikov, Andrey F.; Lundin, Wsevolod V.; Sakharov, Alexey V.; Rafailov, Edik U.

2014-03-01

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

PubMed

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

PubMed

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

Improving efficiency of polystyrene concrete production with composite binders

NASA Astrophysics Data System (ADS)

Lesovik, R. V.; Ageeva, M. S.; Lesovik, G. A.; Sopin, D. M.; Kazlitina, O. V.; Mitrokhina, A. A.

2018-03-01

According to leading marketing researchers, the construction market in Russia and CIS will continue growing at a rapid rate; this applies not only to a large-scale major construction, but to a construction of single-family houses and small-scale industrial facilities as well. Due to this, there are increased requirements for heat insulation of the building enclosures and a significant demand for efficient walling materials with high thermal performance. All these developments led to higher requirements imposed on the equipment that produces such materials.

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.

PubMed

Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon

2016-12-21

A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

An overview of LED applications for general illumination

NASA Astrophysics Data System (ADS)

Pelka, David G.; Patel, Kavita

2003-11-01

This paper begins by reviewing the current state of development of LEDs, their existing markets as well as their potential for energy conservation and their potential for gaining market share in the general illumination market. It discusses LED metrics such as chip size, lumens per watt, thermal resistance, and the recommended maximum current rating. The paper then goes on to consider the importance of non-imaging optics for both optically efficient and extremely compact LED lighting systems. Finally, microstructures useful for controlling the fields-of-view of LED lighting systems are considered and described in some detail. An extremely efficient and cost effective microstructure, called kinoform diffusers, is shown to have very unique properties that make this technology almost ideal for shaping the output beams of LED lighting systems. It concludes by illustrating some general illumination LED lighting systems

Growth and development of Arabidopsis thaliana under single-wavelength red and blue laser light.

PubMed

Ooi, Amanda; Wong, Aloysius; Ng, Tien Khee; Marondedze, Claudius; Gehring, Christoph; Ooi, Boon S

2016-09-23

Indoor horticulture offers a sensible solution for sustainable food production and is becoming increasingly widespread. However, it incurs high energy and cost due to the use of artificial lighting such as high-pressure sodium lamps, fluorescent light or increasingly, the light-emitting diodes (LEDs). The energy efficiency and light quality of currently available horticultural lighting is suboptimal, and therefore less than ideal for sustainable and cost-effective large-scale plant production. Here, we demonstrate the use of high-powered single-wavelength lasers for indoor horticulture. They are highly energy-efficient and can be remotely guided to the site of plant growth, thus reducing on-site heat accumulation. Furthermore, laser beams can be tailored to match the absorption profiles of different plant species. We have developed a prototype laser growth chamber and demonstrate that plants grown under laser illumination can complete a full growth cycle from seed to seed with phenotypes resembling those of plants grown under LEDs reported previously. Importantly, the plants have lower expression of proteins diagnostic for light and radiation stress. The phenotypical, biochemical and proteome data show that the single-wavelength laser light is suitable for plant growth and therefore, potentially able to unlock the advantages of this next generation lighting technology for highly energy-efficient horticulture.

Growth and development of Arabidopsis thaliana under single-wavelength red and blue laser light

PubMed Central

Ooi, Amanda; Wong, Aloysius; Ng, Tien Khee; Marondedze, Claudius; Gehring, Christoph; Ooi, Boon S.

2016-01-01

Indoor horticulture offers a sensible solution for sustainable food production and is becoming increasingly widespread. However, it incurs high energy and cost due to the use of artificial lighting such as high-pressure sodium lamps, fluorescent light or increasingly, the light-emitting diodes (LEDs). The energy efficiency and light quality of currently available horticultural lighting is suboptimal, and therefore less than ideal for sustainable and cost-effective large-scale plant production. Here, we demonstrate the use of high-powered single-wavelength lasers for indoor horticulture. They are highly energy-efficient and can be remotely guided to the site of plant growth, thus reducing on-site heat accumulation. Furthermore, laser beams can be tailored to match the absorption profiles of different plant species. We have developed a prototype laser growth chamber and demonstrate that plants grown under laser illumination can complete a full growth cycle from seed to seed with phenotypes resembling those of plants grown under LEDs reported previously. Importantly, the plants have lower expression of proteins diagnostic for light and radiation stress. The phenotypical, biochemical and proteome data show that the single-wavelength laser light is suitable for plant growth and therefore, potentially able to unlock the advantages of this next generation lighting technology for highly energy-efficient horticulture. PMID:27659906

Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2016-06-01

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.

Constraints on drivers for visible light communications emitters based on energy efficiency.

PubMed

Del Campo-Jimenez, Guillermo; Perez-Jimenez, Rafael; Lopez-Hernandez, Francisco Jose

2016-05-02

In this work we analyze the energy efficiency constraints on drivers for Visible light communication (VLC) emitters. This is the main reason why LED is becoming the main source of illumination. We study the effect of the waveform shape and the modulation techniques on the overall energy efficiency of an LED lamp. For a similar level of illumination, we calculate the emitter energy efficiency ratio η (P_LED/P_TOTAL) for different signals. We compare switched and sinusoidal signals and analyze the effect of both OOK and OFDM modulation techniques depending on the power supply adjustment, level of illumination and signal amplitude distortion. Switched and OOK signals present higher energy efficiency behaviors (0.86≤η≤0.95) than sinusoidal and OFDM signals (0.53≤η≤0.79).

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

A Survey of Methods for Analyzing and Improving GPU Energy Efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mittal, Sparsh; Vetter, Jeffrey S

2014-01-01

Recent years have witnessed a phenomenal growth in the computational capabilities and applications of GPUs. However, this trend has also led to dramatic increase in their power consumption. This paper surveys research works on analyzing and improving energy efficiency of GPUs. It also provides a classification of these techniques on the basis of their main research idea. Further, it attempts to synthesize research works which compare energy efficiency of GPUs with other computing systems, e.g. FPGAs and CPUs. The aim of this survey is to provide researchers with knowledge of state-of-the-art in GPU power management and motivate them to architectmore » highly energy-efficient GPUs of tomorrow.« less

Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures

NASA Astrophysics Data System (ADS)

Guo, Wei; Li, Junmei; Sheikhi, Moheb; Jiang, Jie’an; Yang, Zhenhai; Li, Hongwei; Guo, Shiping; Sheng, Jiang; Sun, Jie; Bo, Baoxue; Ye, Jichun

2018-06-01

Light extraction and current injection are two important considerations in the development of high efficiency light-emitting-diodes (LEDs), but usually cannot be satisfied simultaneously in nanostructure patterned devices. In this work, we investigated near-UV LEDs with nanopillar and nanohole patterns to improve light extraction efficiency. Photoluminescence (PL) intensities were enhanced by 8.0 and 4.1 times for nanopillar and nanohole LEDs compared to that of planar LED. Nanopillar LED exhibits higher PL emission than that of the nanohole LED, attributing to a convex shape sidewall for more effective outward light scattering, and reduction of quantum-confined-stark-effect owing to strain relaxation. However, nanopillar LED exhibits lower electroluminescence intensity than the nanohole sample, which calls for further optimization in carrier distributions. Experimental results were further supported by near-field electric field simulations. This work demonstrates the difference in optical and electrical behaviors between the nanopillar and nanohole LEDs, paving the way for detailed understanding on luminescence extraction mechanisms of nanostructure patterned UV emitters.

Economic analysis of greenhouse lighting: light emitting diodes vs. high intensity discharge fixtures.

PubMed

Nelson, Jacob A; Bugbee, Bruce

2014-01-01

Lighting technologies for plant growth are improving rapidly, providing numerous options for supplemental lighting in greenhouses. Here we report the photosynthetic (400-700 nm) photon efficiency and photon distribution pattern of two double-ended HPS fixtures, five mogul-base HPS fixtures, ten LED fixtures, three ceramic metal halide fixtures, and two fluorescent fixtures. The two most efficient LED and the two most efficient double-ended HPS fixtures had nearly identical efficiencies at 1.66 to 1.70 micromoles per joule. These four fixtures represent a dramatic improvement over the 1.02 micromoles per joule efficiency of the mogul-base HPS fixtures that are in common use. The best ceramic metal halide and fluorescent fixtures had efficiencies of 1.46 and 0.95 micromoles per joule, respectively. We also calculated the initial capital cost of fixtures per photon delivered and determined that LED fixtures cost five to ten times more than HPS fixtures. The five-year electric plus fixture cost per mole of photons is thus 2.3 times higher for LED fixtures, due to high capital costs. Compared to electric costs, our analysis indicates that the long-term maintenance costs are small for both technologies. If widely spaced benches are a necessary part of a production system, the unique ability of LED fixtures to efficiently focus photons on specific areas can be used to improve the photon capture by plant canopies. Our analysis demonstrates, however, that the cost per photon delivered is higher in these systems, regardless of fixture category. The lowest lighting system costs are realized when an efficient fixture is coupled with effective canopy photon capture.

Enhancement in ion adsorption rate and desalination efficiency in a capacitive deionization cell through improved electric field distribution using electrodes composed of activated carbon cloth coated with zinc oxide nanorods.

PubMed

Laxman, Karthik; Myint, Myo Tay Zar; Bourdoucen, Hadj; Dutta, Joydeep

2014-07-09

Electrodes composed of activated carbon cloth (ACC) coated with zinc oxide (ZnO) nanorods are compared with plain ACC electrodes, with respect to their desalination efficiency of a 17 mM NaCl solution at different applied potentials. Polarization of the ZnO nanorods increased the penetration depth and strength of the electric field between the electrodes, leading to an increase in the capacitance and charge efficiency at reduced input charge ratios. Uniform distribution of the electric field lines between two electrodes coated with ZnO nanorods led to faster ion adsorption rates, reduced the electrode saturation time, and increased the average desalination efficiency by ∼45% for all applied potentials. The electrodes were characterized for active surface area, capacitance from cyclic voltammetry, theoretical assessment of surface area utilization, and the magnitude of electric field force acting on an ion of unit charge for each potential.

Evaluating UV-C LED disinfection performance and investigating potential dual-wavelength synergy.

PubMed

Beck, Sara E; Ryu, Hodon; Boczek, Laura A; Cashdollar, Jennifer L; Jeanis, Kaitlyn M; Rosenblum, James S; Lawal, Oliver R; Linden, Karl G

2017-02-01

A dual-wavelength UV-C LED unit, emitting at peaks of 260 nm, 280 nm, and the combination of 260|280 nm together was evaluated for its inactivation efficacy and energy efficiency at disinfecting Escherichia coli, MS2 coliphage, human adenovirus type 2 (HAdV2), and Bacillus pumilus spores, compared to conventional low-pressure and medium-pressure UV mercury vapor lamps. The dual-wavelength unit was also used to measure potential synergistic effects of multiple wavelengths on bacterial and viral inactivation and DNA and RNA damage. All five UV sources demonstrated similar inactivation of E. coli. For MS2, the 260 nm LED was most effective. For HAdV2 and B. pumilus, the MP UV lamp was most effective. When measuring electrical energy per order of reduction, the LP UV lamp was most efficient for inactivating E. coli and MS2; the LP UV and MP UV mercury lamps were equally efficient for HAdV2 and B. pumilus spores. Among the UV-C LEDs, there was no statistical difference in electrical efficiency for inactivating MS2, HAdV2, and B. pumilus spores. The 260 nm and 260|280 nm LEDs had a statistical energy advantage for E. coli inactivation. For UV-C LEDs to match the electrical efficiency per order of log reduction of conventional LP UV sources, they must reach efficiencies of 25-39% or be improved on by smart reactor design. No dual wavelength synergies were detected for bacterial and viral inactivation nor for DNA and RNA damage. Copyright © 2016 Elsevier Ltd. All rights reserved.

Effect of green light spectra on the reduction of retinal damage and stress in goldfish, Carassius auratus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Jin Ah; Kim, Na Na; Choi, Young Jae

We investigated the effect of light spectra on retinal damage and stress in goldfish using green (530 nm) and red (620 nm) light emitting diodes (LEDs) at three intensities each (0.5, 1.0, and 1.5 W/m{sup 2}). We measured the change in the levels of plasma cortisol and H{sub 2}O{sub 2} and expression and levels of caspase-3. The apoptotic response of green and red LED spectra was assessed using the terminal transferase dUTP nick end labeling (TUNEL) assay. Stress indicator (cortisol and H{sub 2}O{sub 2}) and apoptosis-related genes (caspase-3) decreased in green light, but increased in red light with higher light intensities over time.more » The TUNEL assay revealed that more apoptotic cells were detected in outer nuclear layers after exposure to red LED over time with the increase in light intensity, than the other spectra. These results indicate that green light efficiently reduces retinal damage and stress, whereas red light induces it. Therefore, red light-induced retina damage may induce apoptosis in goldfish retina. -- Highlights: •Green light efficiently reduces retinal damage and stress. •Green spectra reduce caspase production and apoptosis. •Red light-induced retina damage may induce apoptosis in goldfish retina. •The retina of goldfish recognizes green spectra as a stable environment.« less

Chip-scale thermal management of high-brightness LED packages

NASA Astrophysics Data System (ADS)

Arik, Mehmet; Weaver, Stanton

2004-10-01

The efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. Light emitting diodes, LEDs, are a strong candidate for the next generation, general illumination applications. LEDs are making great strides in terms of lumen performance and reliability, however the barrier to widespread use in general illumination still remains the cost or $/Lumen. LED packaging designers are pushing the LED performance to its limits. This is resulting in increased drive currents, and thus the need for lower thermal resistance packaging designs. As the power density continues to rise, the integrity of the package electrical and thermal interconnect becomes extremely important. Experimental results with high brightness LED packages show that chip attachment defects can cause significant thermal gradients across the LED chips leading to premature failures. A numerical study was also carried out with parametric models to understand the chip active layer temperature profile variation due to the bump defects. Finite element techniques were utilized to evaluate the effects of localized hot spots at the chip active layer. The importance of "zero defects" in one of the more popular interconnect schemes; the "epi down" soldered flip chip configuration is investigated and demonstrated.

Photonic Design: From Fundamental Solar Cell Physics to Computational Inverse Design

NASA Astrophysics Data System (ADS)

Miller, Owen Dennis

Photonic innovation is becoming ever more important in the modern world. Optical systems are dominating shorter and shorter communications distances, LED's are rapidly emerging for a variety of applications, and solar cells show potential to be a mainstream technology in the energy space. The need for novel, energy-efficient photonic and optoelectronic devices will only increase. This work unites fundamental physics and a novel computational inverse design approach towards such innovation. The first half of the dissertation is devoted to the physics of high-efficiency solar cells. As solar cells approach fundamental efficiency limits, their internal physics transforms. Photonic considerations, instead of electronic ones, are the key to reaching the highest voltages and efficiencies. Proper photon management led to Alta Device's recent dramatic increase of the solar cell efficiency record to 28.3%. Moreover, approaching the Shockley-Queisser limit for any solar cell technology will require light extraction to become a part of all future designs. The second half of the dissertation introduces inverse design as a new computational paradigm in photonics. An assortment of techniques (FDTD, FEM, etc.) have enabled quick and accurate simulation of the "forward problem" of finding fields for a given geometry. However, scientists and engineers are typically more interested in the inverse problem: for a desired functionality, what geometry is needed? Answering this question breaks from the emphasis on the forward problem and forges a new path in computational photonics. The framework of shape calculus enables one to quickly find superior, non-intuitive designs. Novel designs for optical cloaking and sub-wavelength solar cell applications are presented.

Is effective force application in handrim wheelchair propulsion also efficient?

PubMed

Bregman, D J J; van Drongelen, S; Veeger, H E J

2009-01-01

Efficiency in manual wheelchair propulsion is low, as is the fraction of the propulsion force that is attributed to the moment of propulsion of the wheelchair. In this study we tested the hypothesis that a tangential propulsion force direction leads to an increase in physiological cost, due to (1) the sub-optimal use of elbow flexors and extensors, and/or (2) the necessity of preventing of glenohumeral subluxation. Five able-bodied and 11 individuals with a spinal cord injury propelled a wheelchair while kinematics and kinetics were collected. The results were used to perform inverse dynamical simulations with input of (1) the experimentally obtained propulsion force, and (2) only the tangential component of that force. In the tangential force condition the physiological cost was over 30% higher, while the tangential propulsion force was only 75% of the total experimental force. According to model estimations, the tangential force condition led to more co-contraction around the elbow, and a higher power production around the shoulder joint. The tangential propulsion force led to a significant, but small 4% increase in necessity for the model to compensate for glenohumeral subluxation, which indicates that this is not a likely cause of the decrease in efficiency. The present findings support the hypothesis that the observed force direction in wheelchair propulsion is a compromise between efficiency and the constraints imposed by the wheelchair-user system. This implies that training should not be aimed at optimization of the propulsion force, because this may be less efficient and more straining for the musculoskeletal system.

Effect of mass and charge transport speed and direction in porous anodes on microbial electrolysis cell performance.

PubMed

Sleutels, Tom H J A; Hamelers, Hubertus V M; Buisman, Cees J N

2011-01-01

The use of porous electrodes like graphite felt as anode material has the potential of achieving high volumetric current densities. High volumetric current densities, however, may also lead to mass transport limitations within these porous materials. Therefore, in this study we investigated the mass and charge transport limitations by increasing the speed of the forced flow and changing the flow direction through the porous anode. Increase of the flow speed led to a decrease in current density when the flow was directed towards the membrane caused by an increase in anode resistance. Current density increased at higher flow speed when the flow was directed away from the membrane. This was caused by a decrease in transport resistance of ions through the membrane which increased the buffering effect of the system. Furthermore, the increase in flow speed led to an increase of the coulombic efficiency by 306%. Copyright © 2010 Elsevier Ltd. All rights reserved.

Increasing the effective absorption of Eu3+-doped luminescent materials towards practical light emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

van de Haar, Marie Anne; Werner, Jan; Kratz, Nadja; Hilgerink, Tom; Tachikirt, Mohamed; Honold, Jürgen; Krames, Michael R.

2018-03-01

White light emitting diodes (LEDs) composed of a blue LED and a green/yellow downconverter material (phosphor) can be very efficient, but the color is often not considered very pleasant. Although the color rendering can be improved by adding a second, red-emitting phosphor, this generally results in significantly reduced efficacy of the device due to the broad emission of available conventional red-emitting phosphors. Trivalent europium is well-known for its characteristic narrow-band emission in the red region, with little radiation outside the eye sensitivity area, making it an ideal candidate for enabling high color quality as well as a high lumen equivalent of radiation from a spectrum point of view. However, a thorough study of the practical potential and challenges of Eu3+ as a red emitter for white LEDs has remained elusive so far due to the low excitation probability in the blue spectral range which is often even considered a fundamental limitation. Here, we show that the absorption in the blue region can be brought into an interesting regime for white LEDs and show that it is possible to increase both the color rendering and efficacy simultaneously using Eu3+ as a red emitter, compared to warm white LEDs comprising conventional materials.

Evaluating and mapping sources and temporary storage areas of sediment

Treesearch

Leslie M. Reid

1982-01-01

Legislation to regulate forest practices, water quality, and management of federal lands has increased the land managers' need for efficient methods of identifying and mapping sources of sediment in forested basins. At the same time, theoretical analysis of landscape evolution has led research geomorphologists to the consideration of many of the same...

Measuring Technical Vocational Education and Training (TVET) Efficiency: Developing a Framework

ERIC Educational Resources Information Center

Liu, Guimei; Clayton, John

2016-01-01

The growing demand for an increasingly skilled competitive workforce and the associated demand for change and responsiveness in the provision of technical vocational education and training (TVET) has led to the development of stronger links between New Zealand and the People's Republic of China. A collaborative model programme project aims to…

Weed Management in 2050: Perspective on the Future of Weed Science

USDA-ARS?s Scientific Manuscript database

The discipline of weed science is at a critical juncture. Decades of efficient chemical weed control has led to a rise in the number of herbicide resistant weed populations, with few new herbicides and increasing farm labor scarcity available to counter this trend. At the same time, world population...

Whole high-quality light environment for humans and plants

NASA Astrophysics Data System (ADS)

Sharakshane, Anton

2017-11-01

Plants sharing a single light environment on a spaceship with a human being and bearing a decorative function should look as natural and attractive as possible. And consequently they can be illuminated only with white light with a high color rendering index. Can lighting optimized for a human eye be effective and appropriate for plants? Spectrum-based effects have been compared under artificial lighting of plants by high-pressure sodium lamps and general-purpose white LEDs. It has been shown that for the survey sample phytochrome photo-equilibria does not depend significantly on the parameters of white LED light, while the share of phytoactive blue light grows significantly as the color temperature increases. It has been revealed that yield photon flux is proportional to luminous efficacy and increases as the color temperature decreases, general color rendering index Ra and the special color rendering index R14 (green leaf) increase. General-purpose white LED lamps with a color temperature of 2700 K, Ra > 90 and luminous efficacy of 100 lm/W are as efficient as the best high-pressure sodium lamps, and at a higher luminous efficacy their yield photon flux per joule is even bigger in proportion. Here we show that demand for high color rendering white LED light is not contradictory to the agro-technical objectives.

Tin doped indium oxide anodes with artificially controlled nano-scale roughness using segregated Ag nanoparticles for organic solar cells

NASA Astrophysics Data System (ADS)

Kim, Hyo-Joong; Ko, Eun-Hye; Noh, Yong-Jin; Na, Seok-In; Kim, Han-Ki

2016-09-01

Nano-scale surface roughness in transparent ITO films was artificially formed by sputtering a mixed Ag and ITO layer and wet etching of segregated Ag nanoparticles from the surface of the ITO film. Effective removal of self-segregated Ag particles from the grain boundaries and surface of the crystalline ITO film led to a change in only the nano-scale surface morphology of ITO film without changes in the sheet resistance and optical transmittance. A nano-scale rough surface of the ITO film led to an increase in contact area between the hole transport layer and the ITO anode, and eventually increased the hole extraction efficiency in the organic solar cells (OSCs). The heterojunction OSCs fabricated on the ITO anode with a nano-scale surface roughness exhibited a higher power conversion efficiency of 3.320%, than that (2.938%) of OSCs made with the reference ITO/glass. The results here introduce a new method to improve the performance of OSCs by simply modifying the surface morphology of the ITO anodes.

Improving the efficiency of a chemotherapy day unit: applying a business approach to oncology.

PubMed

van Lent, Wineke A M; Goedbloed, N; van Harten, W H

2009-03-01

To improve the efficiency of a hospital-based chemotherapy day unit (CDU). The CDU was benchmarked with two other CDUs to identify their attainable performance levels for efficiency, and causes for differences. Furthermore, an in-depth analysis using a business approach, called lean thinking, was performed. An integrated set of interventions was implemented, among them a new planning system. The results were evaluated using pre- and post-measurements. We observed 24% growth of treatments and bed utilisation, a 12% increase of staff member productivity and an 81% reduction of overtime. The used method improved process design and led to increased efficiency and a more timely delivery of care. Thus, the business approaches, which were adapted for healthcare, were successfully applied. The method may serve as an example for other oncology settings with problems concerning waiting times, patient flow or lack of beds.

Energy analysis and agriculture: an application to US Corn Production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smil, V.; Nachman, P.; Long, T.V. II

1983-01-01

Changes in farming technology have increased the amount and cost of energy used in crop production, raising the question of whether energy efficiency in agriculture has remained constant, decreased, or increased. Despite some studies to the contrary, the authors assert that all essential energy used, both directly and indirectly, in US corn farming has remained constant in relation to crop production during the past two decades. Using a detailed process of energy analysis that takes into account various management and technological changes, they trace and quantify the energy cost of corn production from 1945-1947 and forecast its changes through 1984.more » They conclude that the energy efficiency of corn farming has not declined, and find that future technological and process improvements, led by conservation measures, will likely increase its energy efficiency in the 1980s. 39 references, 33 figures, 88 tables.« less

Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bochkareva, N. I.; Rebane, Yu. T.; Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru

It is shown that the efficiency droop observed as the current through a GaN-based light-emitting diode increases is due to a decrease in the Shockley–Read–Hall nonradiative lifetime. The lifetime decreases with increasing current because a steadily growing number of traps in the density-of-states tails of InGaN/GaN quantum wells become nonradiative recombination centers upon the approach of quasi-Fermi levels to the band edges. This follows from the correlation between the efficiency droop and the appearance of negative differential capacitance, observed in the study. The correlation appears due to slow trap recharging via the trap-assisted tunneling of electrons through the n-type barriermore » of the quantum well and to the inductive nature of the diode-current variation with forward bias.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chun-Han; Su, Chia-Ying; Chen, Chung-Hui

Further reduction of the efficiency droop effect and further enhancements of internal quantum efficiency (IQE) and output intensity of a surface plasmon coupled, blue-emitting light-emitting diode (LED) by inserting a dielectric interlayer (DI) of a lower refractive index between p-GaN and surface Ag nanoparticles are demonstrated. The insertion of a DI leads to a blue shift of the localized surface plasmon (LSP) resonance spectrum and increases the LSP coupling strength at the quantum well emitting wavelength in the blue range. With SiO{sub 2} as the DI, a thinner DI leads to a stronger LSP coupling effect, when compared with themore » case of a thicker DI. By using GaZnO, which is a dielectric in the optical range and a good conductor under direct-current operation, as the DI, the LSP coupling results in the highest IQE, highest LED output intensity, and weakest droop effect.« less

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

Investigation of thermal management technique in blue LED airport taxiway fixtures

NASA Astrophysics Data System (ADS)

Gu, Yimin; Baker, Alex; Narendran, Nadarajah

2007-09-01

On airport runways, blue light fixtures denote taxiways between the runway and the airport terminal. Blue optics transmit mostly short-wavelength radiation, which makes traditional incandescent lamps a poor choice of light source; the resulting fixture efficiency could be less than one percent. LEDs are replacing incandescent lamps in this application. But unlike incandescent sources, LEDs do not radiate enough heat to melt ice and snow from the fixture optics. To meet Federal Aviation Administration (FAA) regulations for weatherability, some LED-based fixtures incorporate electric heaters that, when switched on, nearly negate the energy-savings benefit of converting to LED sources. In this study, we explored methods for conduction and convection of LED junction heat to taxiway fixture optics for the purpose of minimizing snow and ice buildup. A more efficient LED-based system compared to incandescent that would require no additional heaters was demonstrated.

Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

NASA Astrophysics Data System (ADS)

Yue, Qing-Yang; Yang, Yang; Cheng, Zhen-Jia; Guo, Cheng-Shan

2018-06-01

In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs.

Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Stark, Christoph J. M.

Light-emitting diodes (LEDs) are commonly designed and studied based on bulk material properties. In this thesis different approaches based on patterns in the nano and micrometer length scale range are used to tackle low efficiency in the green spectral region, which is known as “green gap”. Since light generation and extraction are governed by microscopic processes, it is instructive to study LEDs with lateral mesa sizes scaled to the nanometer range. Besides the well-known case of the quantum size effect along the growth direction, a continuous lateral scaling could reveal the mechanisms behind the purported absence of a green gap in nanowire LEDs and the role of their extraction enhancement. Furthermore the possibility to modulate strain and piezoelectric polarization by post growth patterning is of practical interest, because the internal electric fields in conventional wurtzite GaN LEDs cause performance problems. A possible alternative is cubic phase GaN, which is free of built-in polarization fields. LEDs on cubic GaN could show the link between strong polarization fields and efficiency roll-off at high current densities, also known as droop. An additional problem for all nitride-based LEDs is efficient light extraction. For a planar GaN LED only roughly 8% of the generated light can be extracted. Novel lightextraction structures with extraction-favoring geometry can yield significant increase in light output power. To investigate the effect of scaling the mesa dimension, micro and nano-sized LED arrays of variable structure size were fabricated. The nano-LEDs were patterned by electron beam lithography and dry etching. They contained up to 100 parallel nano-stripe LEDs connected to one common contact area. The mesa width was varied over 1 μm, 200 nm, and 50 nm. These LEDs were characterized electrically and optically, and the peak emission wavelength was found to depend on the lateral structure size. An electroluminescence (EL) wavelength shift of 3 nm towards smaller values was observed when the stripe width was reduced from 1 μm to 50 nm. At the same time a strong fourfold enhancement of the light emission from the patterned region over the unpatterned area was observed. Micro-patterned LEDs showed non-linear scaling of the light output power, and an enhancement of 39 % was achieved for structures with an area fill ratio of 0.5 over an LED with square mesa. Growth of cubic GaN and cubic GaInN/GaN LEDs was shown by M-OVPE in Vshaped grooves formed by the {111} planes of etched silicon. SEM images of the GaN layer in small ( 0.5 μm) regions show a contrast change where the phase boundary between cubic and wurtzite GaN is expected to occur. The growth parameter space is explored for optimal conditions while minimizing the alloying problem for GaN growth on Si. The cubic GaN phase is confirmed by electron back-scatter diffraction (EBSD) in the V-groove center, whereas wurtzite GaN is found near the groove edges. Luminescence of undoped GaN and GaInN/GaN multi-quantum well structures was studied by cathodoluminescence (CL). The undoped cubic GaN structure showed strong band-edge luminescence at 385 nm (3.22 eV) at 78 K, whereas for the MQW device strong emission at 498 nm is observed, even at room temperature. Full cubic LED structures were grown, and wavelength-stable electroluminescence at 489 nm was demonstrated. LEDs with integrated light extraction structures are grown on free-standing GaN substrates with different off-cut angles. The devices with different off-cut show pronounced features at the top surface that also penetrate the active region. For a 2.24° off-cut, these features resemble fish scales, where the feature sizes are in the μm-range. The 2.24° off-cut LED shows a 3.6-fold increased light output power compared to a LED on virtually on-axis substrate with 0.06° off-cut. The enhancement found in the fish scale LEDs is attributed to increased light scattering, effectively reducing the fraction of trapped light. These results show the potential of structures on the micro and nanometer scale for LED device performance and the progress on cubic GaN could open alternative ways to understand the droop problem.

Essentials for Successful and Widespread LED Lighting Adoption

NASA Astrophysics Data System (ADS)

Khan, Nisa

2011-03-01

Solid-state lighting (SSL), with light-emitting diodes (LEDs) as the light source, is a growing and essential field, particularly in regard to the heightened need for global energy efficiency. In recent years, SSL has experienced remarkable advances in efficiency, light output magnitude and quality. Thus such diverse applications as signage, message centers, displays, and special lighting are now adopting LEDs, taking 2010's market to 9.1 billion - 68% growth from the previous year! While this is promising, future growth in both display and lighting applications will rely upon unveiling deeper understanding and key innovations in LED lighting science and technologies. In this presentation, some LED lighting fundamentals, engineering challenges and novel solutions will be discussed to address reduction in efficiency (a.k.a. droop) at high currents, and to obtain uniform light distribution for overcoming LEDs' directional nature. The droop phenomenon has been a subject of much controversy in the industry and despite several studies and claims, a widely-accepted explanation still lacks because of counter arguments and experiments. Recently several research studies have identified that the droop behavior in nitride-based LEDs beyond certain current density ranges can only be comprehensively explained if the current leaking beyond the LED active region is included. Although such studies have identified a few useful current leakage mechanisms outside the active region, no one has included current leakage, due to non-ideal, 3-D device structures that create undesirable current distribution inside and outside the active region. This talk will address achieving desirable current distributions from optimized 3-D device structures that should reduce current leakage and hence the droop behavior. In addition to novel LED design solutions for droop reduction and uniform light distribution, the talk will address cost and yield concerns as they pertain to core material scarcity. Such solutions are expected to make LED lights more energy efficient, pleasant in appearance, longer-lasting, affordable, and thus suitable for green living.

A cost and technical efficiency analysis of two alternative models for implementing the basic package of health services in Afghanistan.

PubMed

Blaakman, Aaron Philip; Salehi, Ahmad Shah; Boitard, Romain

2014-01-01

Since 2003, the Afghan Ministry of Public Health (MoPH) and international partners have directed a contracting-out model through which non-governmental organisations (NGOs) deliver the Basic Package of Health Services (BPHS) in 31 of the 34 Afghan provinces. The MoPH also managed health service delivery in three provinces under an alternative initiative entitled Strengthening Mechanisms (SM). In 2011, under the authority of the MoPH and Delegation of the European Union to Afghanistan, EPOS Health Management conducted a cost and technical efficiency study of the contracting-out and SM mechanisms in six provinces to examine economic trade-offs in the provision of the BPHS. The study provides analyses of all resource inputs and primary outputs of the BPHS in the six provinces during 2008 and 2009. The authors examined technical efficiency using Data Envelopment Analysis (DEA) at the BPHS facility level. Cost analysis results indicate that the weighted average cost per BPHS outpatient visit totalled $3.41 in the SM provinces and $5.39 in the NGO-led provinces in 2009. Furthermore, the data envelopment analyses (DEAs) indicate that facilities in the three NGO-led provinces scored 0.168 points higher on the DEA scale (0-1) than SM facilities. The authors conclude that an approximate 60% increase in costs yielded a 16.8% increase in technical efficiency in the delivery of the BPHS during 2009 in the six provinces.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

NASA Astrophysics Data System (ADS)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. (Abstract shortened by ProQuest.).

Fabrication of 3D nano-structures using reverse imprint lithography

NASA Astrophysics Data System (ADS)

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures. UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Fabrication of 3D nano-structures using reverse imprint lithography.

PubMed

Han, Kang-Soo; Hong, Sung-Hoon; Kim, Kang-In; Cho, Joong-Yeon; Choi, Kyung-Woo; Lee, Heon

2013-02-01

In spite of the fact that the fabrication process of three-dimensional nano-structures is complicated and expensive, it can be applied to a range of devices to increase their efficiency and sensitivity. Simple and inexpensive fabrication of three-dimensional nano-structures is necessary. In this study, reverse imprint lithography (RIL) with UV-curable benzylmethacrylate, methacryloxypropyl terminated poly-dimethylsiloxane (M-PDMS) resin and ZnO-nano-particle-dispersed resin was used to fabricate three-dimensional nano-structures.UV-curable resins were placed between a silicon stamp and a PVA transfer template, followed by a UV curing process. Then, the silicon stamp was detached and a 2D pattern layer was transferred to the substrate using diluted UV-curable glue. Consequently, three-dimensional nano-structures were formed by stacking the two-dimensional nano-patterned layers. RIL was applied to a light-emitting diode (LED) to evaluate the optical effects of a nano-patterned layer. As a result, the light extraction of the patterned LED was increased by about 12% compared to an unpatterned LED.

Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips.

PubMed

Han, Dan; Ma, Shufang; Jia, Zhigang; Liu, Peizhi; Jia, Wei; Shang, Lin; Zhai, Guangmei; Xu, Bingshe

2018-04-10

InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain.

RECS Data Show Decreased Energy Consumption per Household

EIA Publications

2012-01-01

Total United States energy consumption in homes has remained relatively stable for many years as increased energy efficiency has offset the increase in the number and average size of housing units, according to the newly released data from the Residential Energy Consumption Survey (RECS). The average household consumed 90 million British thermal units (Btu) in 2009 based on RECS. This continues the downward trend in average residential energy consumption of the last 30 years. Despite increases in the number and the average size of homes plus increased use of electronics, improvements in efficiency for space heating, air conditioning, and major appliances have all led to decreased consumption per household. Newer homes also tend to feature better insulation and other characteristics, such as double-pane windows, that improve the building envelope.

High-power LED package requirements

NASA Astrophysics Data System (ADS)

Wall, Frank; Martin, Paul S.; Harbers, Gerard

2004-01-01

Power LEDs have evolved from simple indicators into illumination devices. For general lighting applications, where the objective is to light up an area, white LED arrays have been utilized to serve that function. Cost constraints will soon drive the industry to provide a discrete lighting solution. Early on, that will mean increasing the power densities while quantum efficiencies are addressed. For applications such as automotive headlamps & projection, where light needs to be tightly collimated, or controlled, arrays of die or LEDs will not be able to satisfy the requirements & limitations defined by etendue. Ultimately, whether a luminaire requires a small source with high luminance, or light spread over a general area, economics will force the evolution of the illumination LED into a compact discrete high power package. How the customer interfaces with this new package should be an important element considered early on in the design cycle. If an LED footprint of adequate size is not provided, it may prove impossible for the customer, or end user, to get rid of the heat in a manner sufficient to prevent premature LED light output degradation. Therefore it is critical, for maintaining expected LED lifetime & light output, that thermal performance parameters be defined, by design, at the system level, which includes heat sinking methods & interface materials or methdology.

Output blue light evaluation for phosphor based smart white LED wafer level packages.

PubMed

Kolahdouz, Zahra; Rostamian, Ali; Kolahdouz, Mohammadreza; Ma, Teng; van Zeijl, Henk; Zhang, Kouchi

2016-02-22

This study presents a blue light detector for evaluating the output light of phosphor based white LED package. It is composed of a silicon stripe-shaped photodiode designed and implemented in a 2 μm BiCMOS process which can be used for wafer level integration of different passive and active devices all in just 5 lithography steps. The final device shows a high selectivity to blue light. The maximum responsivity at 480 nm is matched with the target blue LED illumination. The designed structure have better responsivity compared to simple photodiode structure due to reducing the effect of dead layer formation close to the surface because of implantation. It has also a two-fold increase in the responsivity and quantum efficiency compared to previously similar published sensors.

Indoor visible light communication with smart lighting technology

NASA Astrophysics Data System (ADS)

Das Barman, Abhirup; Halder, Alak

2017-02-01

An indoor visible-light communication performance is investigated utilizing energy efficient white light by 2D LED arrays. Enabled by recent advances in LED technology, IEEE 802.15.7 standardizes high-data-rate visible light communication and advocates for colour shift keying (CSK) modulation to overcome flicker and to support dimming. Voronoi segmentation is employed for decoding N-CSK constellation which has superior performance compared to other existing decoding methods. The two chief performance degrading effects of inter-symbol interference and LED nonlinearity is jointly mitigated using LMS post equalization at the receiver which improves the symbol error rate performance and increases field of view of the receiver. It is found that LMS post equalization symbol at 250MHz offers 7dB SNR improvement at SER10-6

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

NASA Astrophysics Data System (ADS)

Huang, Hung-Wen; Huang, Jhi-Kai; Kuo, Shou-Yi; Lee, Kang-Yuan; Kuo, Hao-Chung

2010-06-01

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

Blue light hazard performance comparison of phosphor-converted LED sources with red quantum dots and red phosphor

NASA Astrophysics Data System (ADS)

Zhang, Jingjing; Xie, Bin; Yu, Xingjian; Luo, Xiaobing; Zhang, Tao; Liu, Shishen; Yu, Zhihua; Liu, Li; Jin, Xing

2017-07-01

In this study, the blue light hazard performances of phosphor converted-light-emitting diodes (pc-LEDs) with red phosphor and red quantum dots (QDs) were compared and analyzed by spectral optimization, which boosts the minimum attainable blue light hazard efficiency of radiation (BLHER) at high values of color rendering index (CRI) and luminous efficacy of radiation (LER) when the correlated color temperature (CCT) value changes from 1800 to 7800 K. It is found that the minimal BLHER value increases with the increase in the CCT value, and the minimal BLHER values of the two spectral models are nearly the same. Note that the QDs' model has advantages at CCT coverage under the same constraints of CRI and LER. Then, the relationships between minimal BLHER, CRI, CCT, and LER of pc-LEDs with QDs' model were analyzed. It is found that the minimal BLHER values are nearly the same when the CRI value changes from 50 to 90. Therefore, the influence of CRI on minimal BLHER is insignificant. Minimal BLHER increases with the increase in the LER value from 240 to 360 lm/W.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3 nm–6 nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200 A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelengthmore » we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.« less

Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

NASA Astrophysics Data System (ADS)

Meng, Xiao; Wang, Lai; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-01-01

Efficiency droop is currently one of the most popular research problems for GaN-based light-emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is optimized to accurately determine carrier lifetimes (τ) of blue and green LEDs under different injection current (I). By fitting the τ-I curves and the efficiency droop curves of the LEDs according to the ABC carrier rate equation model, the impact of Auger recombination and carrier leakage on efficiency droop can be characterized simultaneously. For the samples used in this work, it is found that the experimental τ-I curves cannot be described by Auger recombination alone. Instead, satisfactory fitting results are obtained by taking both carrier leakage and carriers delocalization into account, which implies carrier leakage plays a more significant role in efficiency droop at high injection level.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

PubMed Central

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

[Biosynthesis of indigo and indirubin by whole-cell catalyst designed by combination of protein engineering and metabolic engineering].

PubMed

Li, Yang; Zhu, Junge; Wang, Jianjun; Xia, Huanzhang; Wu, Sheng

2016-01-01

The phenylacetone monooxygenase, isolated from Thermobifida fusca, mainly catalyzes Baeyer-Villiger oxidation reaction towards aromatic compounds. Met446 plays a vital role in catalytic promiscuity, based on the structure and function of phenylacetone monooxygenase. Mutation in Met446 locus can offer enzyme new catalytic feature to activate C-H bond, oxidizing indole to finally generate indigo and indirubin, but the yield was only 1.89 mg/L. In order to further improve the biosynthesis efficiency of the whole-cell catalyst, metabolic engineering was applied to change glucose metabolism pathway of Escherichia coli. Blocking glucose isomerase gene pgi led to pentose phosphate pathway instead of the glycolytic pathway to become the major metabolic pathways of glucose, which provided more cofactor NADPH needed in enzymatic oxidation of indole. Engineering the host E. coli led to synthesis of indigo and indirubin efficiency further increased to 25 mg/L. Combination of protein and metabolic engineering to design efficient whole-cell catalysts not only improves the synthesis of indigo and indirubin, but also provides a novel strategy for whole-cell catalyst development.

Ultraviolet light-emitting diodes in water disinfection.

PubMed

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial disinfection. The emitted wavelength was found to be an essential factor when using LEDs; thus, care should be taken in selecting the proper LED for maximum disinfection.

P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

NASA Astrophysics Data System (ADS)

Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

2017-09-01

The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Kim, Jae-Ho; Kim, Jun-Yong; Kim, Dae-Hyun; Na, Jin-Young; Kim, Sun-Kyung; Kang, Daesung; Seong, Tae-Yeon

2017-01-01

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

NASA Astrophysics Data System (ADS)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Evaluating UV-C LED disinfection performance and ...

EPA Pesticide Factsheets

This study evaluated ultraviolet (UV) light emitting diodes (LEDs) emitting at 260 nm, 280 nm, and the combination of 260|280 nm together for their efficacy at inactivating Escherichia. coli, MS2 coliphage, human adenovirus type 2 (HAdV2), and Bacillus pumilus spores; research included an evaluation of genomic damage. Inactivation by the LEDs was compared with the efficacy of conventional UV sources, the low-pressure (LP) and medium-pressure (MP) mercury vapor lamps. The work also calculated the electrical energy per order of reduction of the microorganisms by the five UV sources.For E. coli, all five UV sources yielded similar inactivation rates. For MS2 coliphage, the 260 nm LED was most effective. For HAdV2 and B. pumilus, the MP UV lamp was significantly more effective than the LP UV and UVC LED sources. When considering electrical energy per order of reduction, the LP UV lamp was the most efficient for E. coli and MS2, and the MPUV and LPUV were equally efficient for HAdV2 and B. pumilus spores. Among the UVC LEDs, the 280 nm LED unit required the least energy per log reduction of E. coli and HAdV2. The 280 nm and 260|280 nm LED units were equally efficient per log reduction of B. pumilus spores, and the 260 nm LED unit required the lowest energy per order of reduction of MS2 coliphage. The combination of the 260 nm and 280 nm UV LED wavelengths was also evaluated for potential synergistic effects. No dual-wavelength synergy was detected for inactivation of

Green Acquisition Gap Analysis of the United States Air Force Operational Contracting Organizations

DTIC Science & Technology

2011-12-01

alternative sources, and changing the culture,” and that “for the last several years … the Air Force has led the way in this area.” Furthermore...less-toxic alternatives . Abstract Metrics • Increase renewable energy and renewable energy generation on agency property; • Pursue opportunities...agencies to purchase energy- efficient (Energy Star) products and requires increased use of alternative fuels. In addition, this regulation requires

Facing the future: the effects of the impending financial drought on NHS finances and how UK radiology services can contribute to expected efficiency savings

PubMed Central

Grant, L; Appleby, J; Griffin, N; Adam, A; Gishen, P

2012-01-01

The recent turmoil within the banking sector has led to the development of the most significant recession since the “great depression” of the 1930s. Although the coalition government has promised to “guarantee that health spending increases in real terms in each year of Parliament”, this may still not be enough to meet future needs over the coming years due to increasing demand and cost pressures. The expected mismatch between actual National Health Service (NHS) funding post-2011 and that required to satisfy increasing demand has been estimated by the Department of Health to require efficiency savings representing up to one-fifth of the overall NHS budget. This paper explains the reasons behind the anticipated slowdown in the growth of real NHS funding, and how, as a discipline, radiology can increase the efficiency of the services it provides in anticipation of future financial austerity within the NHS. PMID:22167516

Simulation and comparison of the illuminance, uniformity, and efficiency of different forms of lighting used in basketball court illumination.

PubMed

Sun, Wen-Shing; Tien, Chuen-Lin; Tsuei, Chih-Hsuan; Pan, Jui-Wen

2014-10-10

We simulate and compare the illuminance, uniformity, and efficiency of metal-halide lamps, white LED light sources, and hybrid light box designs combining sunlight and white LED lighting used for indoor basketball court illumination. According to the optical simulation results and our examination of real situations, we find that hybrid light box designs combining sunlight and white LEDs do perform better than either metal-halide lamps or white LED lights. An evaluation of the sunlight concentrator system used in our inverted solar cell shows that the energy consumption of stadium lighting can be reduced significantly.

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography

PubMed Central

2016-01-01

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p-type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination. PMID:28066690

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography.

PubMed

Hölz, K; Lietard, J; Somoza, M M

2017-01-03

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p -type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination.

Highly Efficient Small Form Factor LED Retrofit Lamp

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steven Allen; Fred Palmer; Ming Li

2011-09-11

This report summarizes work to develop a high efficiency LED-based MR16 lamp downlight at OSRAM SYLVANIA under US Department of Energy contract DE-EE0000611. A new multichip LED package, electronic driver, and reflector optic were developed for these lamps. At steady-state, the lamp luminous flux was 409 lumens (lm), luminous efficacy of 87 lumens per watt (LPW), CRI (Ra) of 87, and R9 of 85 at a correlated color temperature (CCT) of 3285K. The LED alone achieved 120 lumens per watt efficacy and 600 lumen flux output at 25 C. The driver had 90% electrical conversion efficiency while maintaining excellent powermore » quality with power factor >0.90 at a power of only 5 watts. Compared to similar existing MR16 lamps using LED sources, these lamps had much higher efficacy and color quality. The objective of this work was to demonstrate a LED-based MR16 retrofit lamp for replacement of 35W halogen MR16 lamps having (1) luminous flux of 500 lumens, (2) luminous efficacy of 100 lumens per watt, (3) beam angle less than 40{sup o} and center beam candlepower of at least 1000 candelas, and (4) excellent color quality.« less

Salicaceae Endophytes Modulate Stomatal Behavior and Increase Water Use Efficiency in Rice

PubMed Central

Rho, Hyungmin; Van Epps, Victor; Wegley, Nicholas; Doty, Sharon L.; Kim, Soo-Hyung

2018-01-01

Bacterial and yeast endophytes isolated from the Salicaceae family have been shown to promote growth and alleviate stress in plants from different taxa. To determine the physiological pathways through which endophytes affect plant water relations, we investigated leaf water potential, whole-plant water use, and stomatal responses of rice plants to Salicaceae endophyte inoculation under CO2 enrichment and water deficit. Daytime stomatal conductance and stomatal density were lower in inoculated plants compared to controls. Leaf ABA concentrations increased with endophyte inoculation. As a result, transpirational water use decreased significantly with endophyte inoculation while biomass did not change or slightly increased. This response led to a significant increase in cumulative water use efficiency at harvest. Different endophyte strains produced the same results in host plant water relations and stomatal responses. These stomatal responses were also observed under elevated CO2 conditions, and the increase in water use efficiency was more pronounced under water deficit conditions. The effect on water use efficiency was positively correlated with daily light integrals across different experiments. Our results provide insights on the physiological mechanisms of plant-endophyte interactions involving plant water relations and stomatal functions. PMID:29552021

Using a compositionally step graded hole reservoir layer with hole accelerating ability for reducing efficiency droop in GaN-based LEDs

NASA Astrophysics Data System (ADS)

Ye, Daqian; Zhang, Dongyan; Wu, Chaoyu; Wang, Duxiang; Xu, Chenke; Zhang, Jie; Huang, Meichun

2017-05-01

We presented a compositionally graded hole reservoir layers(HRL) - an AlGaN/GaN super lattice hole reservoir layer with Al mole fraction multi-step gradient from high to low (GSL-HRL) in this paper. The designed LED with compositionally step graded HRL shows comparable low operating voltage and less efficiency droop. Simulation results reveal that this graded HRL could reserve the hole effectively and the hole in HRL can be energized by the strong electric field due to the polarization caused by different Al contents AlxGa1-xN layers. Such a design makes hole travel across the p-type EBL and inject into the MQWs more efficiently and smoothly. The novel structure of HRL improves the performance of the LED significantly and gives a promising application in high power GaN-based LED in the future.

Highly efficient all-nitride phosphor-converted white light emitting diode

NASA Astrophysics Data System (ADS)

Mueller-Mach, Regina; Mueller, Gerd; Krames, Michael R.; Höppe, Henning A.; Stadler, Florian; Schnick, Wolfgang; Juestel, Thomas; Schmidt, Peter

2005-07-01

The development and demonstration of a highly efficient warm-white all-nitride phosphor-converted light emitting diode (pc-LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials, both of which are doped with Eu2+. For color conversion of the primary blue the nitridosilicates M2Si5N8 (orange-red) and MSi2O2N2 (yellow-green), with M = alkaline earth, were employed, thus achieving a high luminous efficiency (25 lumen/W at 1 W input), excellent color quality (correlated color temperature CCT = 3200 K, general color rendering index Ra > 90) and the highest proven color stability of any pc-LED obtained so far. Thus, these novel all-nitride LEDs are superior to both incandescent and fluorescent lamps and may therefore become the next generation of general lighting sources.

Mechanisms for the prevention of marine bioinvasions for better biosecurity.

PubMed

Hewitt, Chad L; Campbell, Marnie L

2007-01-01

Biosecurity management allows countries to meet a number of international obligations and provides some protection from potential degradation of environmental, economic, social and cultural values. Ocean governance relies on the precepts of ecologically sustainable development to manage the multiple uses in the coastal zone. The increasing reliance on aquaculture to provide food security and economic development has led to an increase in the use of non-native target species grown as food sources. Increased economic activity has led to shifting trade patterns and increased efficiencies in vessels with the resulting increase in the number of introduced marine species via ballast water and hull fouling. Herein we review the different marine biosecurity strategies and legislation that have been implemented internationally and locally that aid in preventing and managing introduced marine species, with some attention to Australia and New Zealand as examples. Typical tools being used include quarantine, Import Health Standards, voluntary cleaning guidelines, and risk assessment, all of which aim to prevent introductions.

Enhancing the production of eicosapentaenoic acid (EPA) from Nannochloropsis oceanica CY2 using innovative photobioreactors with optimal light source arrangements.

PubMed

Chen, Chun-Yen; Chen, Yu-Chun; Huang, Hsiao-Chen; Ho, Shih-Hsin; Chang, Jo-Shu

2015-09-01

Binary combinations of LEDs with four different colors were used as light sources to identify the effects of multiple wavelengths on the production of eicosapentaenoic acid (EPA) by an isolated microalga Nannochloropsis oceanica CY2. Combining LED-Blue and LED-Red could give the highest EPA productivity of 13.24 mg L(-1) d(-1), which was further enhanced to 14.4 mg L(-1) d(-1) when using semi-batch operations at a 40% medium replacement ratio. A novel photobioreactor with additional immersed light sources improved light penetration efficiency and led to an 38% (0.170-0.235 g L(-1) d(-1)) increase in the microalgae biomass productivity and a 9% decrease in electricity consumption yield of EPA (10.15-9.33 kW-h (g EPA)(-1)) when compared with the control (i.e., without immersed light sources). Operating the immersed LEDs at a flashing-frequency of 9 Hz further lowered the energy consumption yield to 8.87 kW-h (g EPA)(-1). Copyright © 2015 Elsevier Ltd. All rights reserved.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

PubMed Central

2013-01-01

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ebert, Jon Llyod

This Small Business Innovative Research (SBIR) Phase I project will demonstrate the feasibility of an innovative temperature control technology for Metal-Organic Chemical Vapor Deposition (MOCVD) process used in the fabrication of Multi-Quantum Well (MQW) LEDs. The proposed control technology has the strong potential to improve both throughput and performance quality of the manufactured LED. The color of the light emitted by an LED is a strong function of the substrate temperature during the deposition process. Hence, accurate temperature control of the MOCVD process is essential for ensuring that the LED performance matches the design specification. The Gallium Nitride (GaN) epitaxymore » process involves depositing multiple layers at different temperatures. Much of the recipe time is spent ramping from one process temperature to another, adding significant overhead to the production time. To increase throughput, the process temperature must transition over a range of several hundred degrees Centigrade many times with as little overshoot and undershoot as possible, in the face of several sources of process disturbance such as changing emissivities. Any throughput increase achieved by faster ramping must also satisfy the constraint of strict temperature uniformity across the carrier so that yield is not affected. SC Solutions is a leading supplier of embedded real-time temperature control technology for MOCVD systems used in LED manufacturing. SC’s Multiple Input Multiple Output (MIMO) temperature controllers use physics-based models to achieve the performance demanded by our customers. However, to meet DOE’s ambitious goals of cost reduction of LED products, a new generation of temperature controllers has to be developed. SC believes that the proposed control technology will be made feasible by the confluence of mathematical formulation as a convex optimization problem, new efficient and scalable algorithms, and the increase in computational power available for real-time control.« less

Photodynamic action of LED-activated pyropheophorbide-α methyl ester in cisplatin-resistant human ovarian carcinoma cells

NASA Astrophysics Data System (ADS)

Tan, Y.; Xu, C. S.; Xia, X. S.; Yu, H. P.; Bai, D. Q.; He, Y.; Leung, A. W. N.

2009-04-01

Cisplatin-resistance is a major obstacle for the successful therapy to ovarian cancer, and exploring novel approach to deactivate cisplatin-resistant ovarian cells will improve the clinical outcomes. Our present study showed that there was no dark cytotoxicity of MPPa in the COC1/DDP cells at the dose of 0.25 - 4 μM, and LED-activated MPPa resulted in drug dose- and light-dependent cytotoxicity. Apoptotic rate 6 h after LED-activated MPPa (2 μM) increased to 16.71% under the light energy of 1 J/cm2. Confocal laser scanning microscopy showed that MPPa mainly localized in the intracellular membrane system, namely the endoplasmic reticulum, Golgi apparatus, lysosomes and mitochondria in the COC1/DDP cells. Mitochondrial membrane potential (ΔΨm) was collapsed when COC1/DDP cells were exposed to 2 μM MPPa for 20 h and then 1 J/cm2 irradiation of LED source. These data demonstrated that LED-activated MPPa significantly deactivated cisplatin-resistant ovarian cell line COC1/DDP cells and enhanced apoptosis and decreased ΔΨm, which suggests LED is an efficient light source for PDT and LED-activated MPPa can be developed as new modality for treating cisplatin-resistant ovarian.

Superior characteristics of microscale light emitting diodes through tightly lateral oxide-confined scheme

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Li, Heng; Zhang, Zhe-Han; Chen, Hsiang; Wang, Shing-Chung; Lu, Tien-Chang

2017-01-01

We report on the design of the geometry and chip size-controlled structures of microscale light-emitting diodes (micro-LEDs) with a shallow-etched oxide-refilled current aperture and their performance. The proposed structure, which combines an indium-tin-oxide layer and an oxide-confined aperture, exhibited not only uniform current distribution but also remarkably tight current confinement. An extremely high injection level of more than 90 kA/cm2 was achieved in the micro-LED with a 5-μm aperture. Current spreading and the droop mechanism in the investigated devices were characterized through electroluminescence measurements, optical microscopy, and beam-view imaging. Furthermore, we utilized the β-model and S-model to elucidate current crowding and the efficiency droop phenomenon in the investigated micro-LEDs. The luminescence results evidenced the highly favorable performance of the fabricated micro-LEDs, which is a result of their more uniform current spreading and lower junction temperature relative to conventional LEDs. Moreover, the maximum endured current density could be further increased by reducing the aperture size of the micro-LEDs. The proposed design, which is expected to be beneficial for the development of high-performance array-based micro-LEDs, is practicable through current state-of-the-art processing techniques.

The activation of directional stem cell motility by green light-emitting diode irradiation.

PubMed

Ong, Wei-Kee; Chen, How-Foo; Tsai, Cheng-Ting; Fu, Yun-Ju; Wong, Yi-Shan; Yen, Da-Jen; Chang, Tzu-Hao; Huang, Hsien-Da; Lee, Oscar Kuang-Sheng; Chien, Shu; Ho, Jennifer Hui-Chun

2013-03-01

Light-emitting diode (LED) irradiation is potentially a photostimulator to manipulate cell behavior by opsin-triggered phototransduction and thermal energy supply in living cells. Directional stem cell motility is critical for the efficiency and specificity of stem cells in tissue repair. We explored that green LED (530 nm) irradiation directed the human orbital fat stem cells (OFSCs) to migrate away from the LED light source through activation of extracellular signal-regulated kinases (ERK)/MAP kinase/p38 signaling pathway. ERK inhibitor selectively abrogated light-driven OFSC migration. Phosphorylation of these kinases as well as green LED irradiation-induced cell migration was facilitated by increasing adenosine triphosphate (ATP) production in OFSCs after green LED exposure, and which was thermal stress-independent mechanism. OFSCs, which are multi-potent mesenchymal stem cells isolated from human orbital fat tissue, constitutionally express three opsins, i.e. retinal pigment epithelium-derived rhodopsin homolog (RRH), encephalopsin (OPN3) and short-wave-sensitive opsin 1 (OPN1SW). However, only two non-visual opsins, i.e. RRH and OPN3, served as photoreceptors response to green LED irradiation-induced OFSC migration. In conclusion, stem cells are sensitive to green LED irradiation-induced directional cell migration through activation of ERK signaling pathway via a wavelength-dependent phototransduction. Copyright © 2012 Elsevier Ltd. All rights reserved.

A 1024-channel 6 mW/mm2 optical stimulator for in-vitro neuroscience experiments.

PubMed

Cai, Lei; Wang, Baitong; Huang, Xiuxiang; Yang, Zhi

2014-01-01

Recent optical stimulation technologies allow improved selectivity and have been widely used in neuroscience research. This paper presents an optical stimulator based on high power LEDs. It has 1024 channels and can produce flexible stimulation patterns in each frame, refreshed at above 20 Hz. To increase the light intensity, each LED has an optical package that directs the light into a small angle. To ensure the light of each LED can reach the lens, the LEDs have been specially placed and oriented to the lens. With these efforts, the achieved power efficiency (defined as the mount of LED light power passing through the lens divided by the LED total power consumption) is 5 × 10(-5). In our current prototype, an individual LED unit can source 60 mW electrical power, where the induced irradiance on neural tissues is 6 mW/mm(2) integrating from 460 nm to 480 nm. The light spot is tunable in size from 18 μm to 40 μm with an extra 5-10 μm separation for isolating two adjacent spots. Through both bench-top measurement and finite element simulation, we found the cross channel interference is below 10%. A customized software interface has been developed to control and program the stimulator operation.

The Effect of Spectral Quality on Daily Patterns of Gas Exchange, Biomass Gain, and Water-Use-Efficiency in Tomatoes and Lisianthus: An Assessment of Whole Plant Measurements

PubMed Central

Lanoue, Jason; Leonardos, Evangelos D.; Ma, Xiao; Grodzinski, Bernard

2017-01-01

Advancements in light-emitting diode (LED) technology have made them a viable alternative to current lighting systems for both sole and supplemental lighting requirements. Understanding how wavelength specific LED lighting can affect plants is thus an area of great interest. Much research is available on the wavelength specific responses of leaves from multiple crops when exposed to long-term wavelength specific lighting. However, leaf measurements do not always extrapolate linearly to the complexities which are found within a whole plant canopy, namely mutual shading and leaves of different ages. Taken together, both tomato (Solanum lycopersicum) leaves under short-term illumination and lisianthus (Eustoma grandiflorum) and tomato whole plant diurnal patterns of plants acclimated to specific lighting indicate wavelength specific responses of both H2O and CO2 gas exchanges involved in the major growth parameters of a plant. Tomato leaves grown under a white light source indicated an increase in transpiration rate and internal CO2 concentration and a subsequent decrease in water-use-efficiency (WUE) when exposed to a blue LED light source compared to a green LED light source. Interestingly, the maximum photosynthetic rate was observed to be similar. Using plants grown under wavelength specific supplemental lighting in a greenhouse, a decrease in whole plant WUE was seen in both crops under both red-blue (RB) and red-white (RW) LEDs when compared to a high pressure sodium (HPS) light. Whole plant WUE was decreased by 31% under the RB LED treatment for both crops compared to the HPS treatment. Tomato whole plant WUE was decreased by 25% and lisianthus whole plant WUE was decreased by 15% when compared to the HPS treatment when grown under RW LED. The understanding of the effects of wavelength specific lighting on both leaf and whole plant gas exchange has significant implications on basic academic research as well as commercial greenhouse production. PMID:28676816

The Effect of Spectral Quality on Daily Patterns of Gas Exchange, Biomass Gain, and Water-Use-Efficiency in Tomatoes and Lisianthus: An Assessment of Whole Plant Measurements.

PubMed

Lanoue, Jason; Leonardos, Evangelos D; Ma, Xiao; Grodzinski, Bernard

2017-01-01

Advancements in light-emitting diode (LED) technology have made them a viable alternative to current lighting systems for both sole and supplemental lighting requirements. Understanding how wavelength specific LED lighting can affect plants is thus an area of great interest. Much research is available on the wavelength specific responses of leaves from multiple crops when exposed to long-term wavelength specific lighting. However, leaf measurements do not always extrapolate linearly to the complexities which are found within a whole plant canopy, namely mutual shading and leaves of different ages. Taken together, both tomato ( Solanum lycopersicum ) leaves under short-term illumination and lisianthus ( Eustoma grandiflorum ) and tomato whole plant diurnal patterns of plants acclimated to specific lighting indicate wavelength specific responses of both H 2 O and CO 2 gas exchanges involved in the major growth parameters of a plant. Tomato leaves grown under a white light source indicated an increase in transpiration rate and internal CO 2 concentration and a subsequent decrease in water-use-efficiency (WUE) when exposed to a blue LED light source compared to a green LED light source. Interestingly, the maximum photosynthetic rate was observed to be similar. Using plants grown under wavelength specific supplemental lighting in a greenhouse, a decrease in whole plant WUE was seen in both crops under both red-blue (RB) and red-white (RW) LEDs when compared to a high pressure sodium (HPS) light. Whole plant WUE was decreased by 31% under the RB LED treatment for both crops compared to the HPS treatment. Tomato whole plant WUE was decreased by 25% and lisianthus whole plant WUE was decreased by 15% when compared to the HPS treatment when grown under RW LED. The understanding of the effects of wavelength specific lighting on both leaf and whole plant gas exchange has significant implications on basic academic research as well as commercial greenhouse production.

Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y-H; Nguyen, H P T; Djavid, M; Mi, Z

2015-10-14

The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

Color-Tunable ZnO/GaN Heterojunction LEDs Achieved by Coupling with Ag Nanowire Surface Plasmons.

PubMed

Yang, Liu; Wang, Yue; Xu, Haiyang; Liu, Weizhen; Zhang, Cen; Wang, Chunliang; Wang, Zhongqiang; Ma, Jiangang; Liu, Yichun

2018-05-09

Color-tunable light-emitting devices (LEDs) have a great impact on our daily life. Herein, LEDs with tunable electroluminescence (EL) color were achieved via introducing Ag nanowires surface plasmons into p-GaN/n-ZnO film heterostructures. By optimizing the surface coverage density of coated Ag nanowires, the EL color was changed continuously from yellow-green to blue-violet. Transient-state and temperature-variable fluorescence emission characterizations uncovered that the spontaneous emission rate and the internal quantum efficiency of the near-UV emission were increased as a consequence of the resonance coupling interaction between Ag nanowires surface plasmons and ZnO excitons. This effect induces the selective enhancement of the blue-violet EL component but suppresses the defect-related yellow-green emission, leading to the observed tunable EL color. The proposed strategy of introducing surface plasmons can be further applied to many other kinds of LEDs for their selective enhancement of EL intensity and effective adjustment of the emission color.

Design of organic ternary blends and small-molecule bulk heterojunctions: photophysical considerations

NASA Astrophysics Data System (ADS)

Rajesh, Kallarakkal Ramakrishnan; Paudel, Keshab; Johnson, Brian; Hallani, Rawad; Anthony, John; Ostroverkhova, Oksana

2015-01-01

We explored relationships between photophysical processes and solar cell characteristics in solution-processable bulk heterojunctions (BHJs), in particular: (1) polymer donor:fullerene acceptor:small-molecule (SM) nonfullerene acceptor, (2) polymer donor:SM donor:SM nonfullerene acceptor, and (3) SM donor:SM nonfullerene or fullerene acceptor. Addition of a nonfullerene SM acceptor to "efficient" polymer:fullerene BHJs led to a reduction in power conversion efficiency (PCE), mostly due to decreased charge photogeneration efficiency and increased disorder. By contrast, addition of an SM donor to "inefficient" polymer:SM nonfullerene acceptor BHJs led to a factor of two to three improvement in the PCE, due to improved charge photogeneration efficiency and transport. In most blends, exciplex formation was observed and correlated with a reduced short-circuit current (Jsc) without negatively impacting the open-circuit voltage (Voc). A factor of ˜5 higher PCE was observed in SM donor:fullerene acceptor BHJs as compared to SMBHJs with the same SM donor but nonfullerene acceptor, due to enhanced charge carrier photogeneration in the blend with fullerene. Our study revealed that the HOMO and LUMO energies of molecules comprising a blend are not reliable parameters for predicting Voc of the blend, and an understanding of the photophysics is necessary for interpreting solar cell characteristics and improving the molecular design of BHJs.

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Whole high-quality light environment for humans and plants.

PubMed

Sharakshane, Anton

2017-11-01

Plants sharing a single light environment on a spaceship with a human being and bearing a decorative function should look as natural and attractive as possible. And consequently they can be illuminated only with white light with a high color rendering index. Can lighting optimized for a human eye be effective and appropriate for plants? Spectrum-based effects have been compared under artificial lighting of plants by high-pressure sodium lamps and general-purpose white LEDs. It has been shown that for the survey sample phytochrome photo-equilibria does not depend significantly on the parameters of white LED light, while the share of phytoactive blue light grows significantly as the color temperature increases. It has been revealed that yield photon flux is proportional to luminous efficacy and increases as the color temperature decreases, general color rendering index R a and the special color rendering index R 14 (green leaf) increase. General-purpose white LED lamps with a color temperature of 2700 K, R a  > 90 and luminous efficacy of 100 lm/W are as efficient as the best high-pressure sodium lamps, and at a higher luminous efficacy their yield photon flux per joule is even bigger in proportion. Here we show that demand for high color rendering white LED light is not contradictory to the agro-technical objectives. Copyright © 2017. Published by Elsevier Ltd.

Enhancing the thermal dissipation of a light-converting composite for quantum dot-based white light-emitting diodes through electrospinning nanofibers

NASA Astrophysics Data System (ADS)

Zheng, Huai; Lei, Xiang; Cheng, Ting; Liu, Sheng; Zeng, Xiaoliang; Sun, Rong

2017-06-01

Quantum dots (QDs) have been developed as one of the most promising light-converting materials for white light-emitting diodes (LEDs). In current QD-based LED packaging structures, composites of QDs and polymers are used as light-converting layers. However, the ultralow thermal conductivity of such composites seriously hinders the dissipation of QD-generating heat. In this paper, we demonstrate a method to enhance the thermal dissipation of QD-polymer composites through electrospinning polymer nanofibers. QD-polymer films embedded by electrospun nanofibers were prepared. Benefitting from aligned polymer chains in the electrospun nanofibers, the through-panel and in-panel thermal conductivities of the proposed QD-polymer film increased by 39.9% and 423.1%, respectively, compared to traditional QD-polymer film. The proposed and traditional QD-polymer films were both packaged on chip on board (CoB) LEDs for experimental comparison. Compared to traditional QD-polymer film, the luminous flux and luminous efficiency of the LEDs were increased by up to 51.8% and 42.9% by the proposed QD-polymer film under a current of 800 mA, respectively. With an increase in the driving current from 20-800 mA, the correlated color temperature (CCT) variation decreased by 72.7%. The maximum temperatures in the QD-polymer films were reduced from 419 K-411 K under a driving current of 200 mA.

A high proportion of blue light increases the photosynthesis capacity and leaf formation rate of Rosa × hybrida but does not affect time to flower opening.

PubMed

Terfa, Meseret Tesema; Solhaug, Knut Asbjørn; Gislerød, Hans Ragnar; Olsen, Jorunn Elisabeth; Torre, Sissel

2013-05-01

Alterations in light quality affect plant morphogenesis and photosynthetic responses but the effects vary significantly between species. Roses exhibit an irradiance-dependent flowering control but knowledge on light quality responses is scarce. In this study we analyzed, the responses in morphology, photosynthesis and flowering of Rosa × hybrida to different blue (B) light proportions provided by light-emitting diodes (LED, high B 20%) and high pressure sodium (HPS, low B 5%) lamps. There was a strong morphological and growth effect of the light sources but no significant difference in total dry matter production and flowering. HPS-grown plants had significantly higher leaf area and plant height, yet a higher dry weight proportion was allocated to leaves than stems under LED. LED plants showed 20% higher photosynthetic capacity (Amax ) and higher levels of soluble carbohydrates. The increase in Amax correlated with an increase in leaf mass per unit leaf area, higher stomata conductance and CO2 exchange, total chlorophyll (Chl) content per area and Chl a/b ratio. LED-grown leaves also displayed a more sun-type leaf anatomy with more and longer palisade cells and a higher stomata frequency. Although floral initiation occurred at a higher leaf number in LED, the time to open flowers was the same under both light conditions. Thereby the study shows that a higher portion of B light is efficient in increasing photosynthesis performance per unit leaf area, enhancing growth and morphological changes in roses but does not affect the total Dry Matter (DM) production or time to open flower. Copyright © Physiologia Plantarum 2012.

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Peng; State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012; Bai, Xue, E-mail: baix@jlu.edu.cn, E-mail: yuzhang@jlu.edu.cn

High quantum yield, narrow full width at half-maximum and tunable emission color of perovskite quantum dots (QDs) make this kind of material good prospects for light-emitting diodes (LEDs). However, the relatively poor stability under high temperature and air condition limits the device performance. To overcome this issue, the liquid-type packaging structure in combination with blue LED chip was employed to fabricate the fluorescent perovskite quantum dot-based LEDs. A variety of monochromatic LEDs with green, yellow, reddish-orange, and red emission were fabricated by utilizing the inorganic cesium lead halide perovskite quantum dots as the color-conversion layer, which exhibited the narrow fullmore » width at half-maximum (<35 nm), the relatively high luminous efficiency (reaching 75.5 lm/W), and the relatively high external quantum efficiency (14.6%), making it the best-performing perovskite LEDs so far. Compared to the solid state LED device, the liquid-type LED devices exhibited excellent color stability against the various working currents. Furthermore, we demonstrated the potential prospects of all-inorganic perovskite QDs for the liquid-type warm white LEDs.« less

Temperature controls oxidative phosphorylation and reactive oxygen species production through uncoupling in rat skeletal muscle mitochondria.

PubMed

Jarmuszkiewicz, Wieslawa; Woyda-Ploszczyca, Andrzej; Koziel, Agnieszka; Majerczak, Joanna; Zoladz, Jerzy A

2015-06-01

Mitochondrial respiratory and phosphorylation activities, mitochondrial uncoupling, and hydrogen peroxide formation were studied in isolated rat skeletal muscle mitochondria during experimentally induced hypothermia (25 °C) and hyperthermia (42 °C) compared to the physiological temperature of resting muscle (35 °C). For nonphosphorylating mitochondria, increasing the temperature from 25 to 42 °C led to a decrease in membrane potential, hydrogen peroxide production, and quinone reduction levels. For phosphorylating mitochondria, no temperature-dependent changes in these mitochondrial functions were observed. However, the efficiency of oxidative phosphorylation decreased, whereas the oxidation and phosphorylation rates and oxidative capacities of the mitochondria increased, with increasing assay temperature. An increase in proton leak, including uncoupling protein-mediated proton leak, was observed with increasing assay temperature, which could explain the reduced oxidative phosphorylation efficiency and reactive oxygen species production. Copyright © 2015 Elsevier Inc. All rights reserved.

Influence of diligent disintegration on anaerobic biomass and performance of microbial fuel cell.

PubMed

Divyalakshmi, Palanisamy; Murugan, Devaraj; Rai, Chockalingam Lajapathi

2017-12-01

To enhance the performance of microbial fuel cells (MFC) by increasing the surface area of cathode and diligent mechanical disintegration of anaerobic biomass. Tannery effluent and anaerobic biomass were used. The increase in surface area of the cathode resulted in 78% COD removal, with the potential, current density, power density and coulombic efficiency of 675 mV, 147 mA m -2 , 33 mW m -2 and 3.5%, respectively. The work coupled with increased surface area of the cathode with diligent mechanical disintegration of the biomass, led to a further increase in COD removal of 82% with the potential, current density, power density and coulombic efficiency of 748 mV, 229 mA m -2 , 78 mW m -2 and 6% respectively. Mechanical disintegration of the biomass along with increased surface area of cathode enhances power generation in vertical MFC reactors using tannery effluent as fuel.

Current Practices in Efficiency Financing: An Overview for State and Local Governments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leventis, Greg; Fadrhonc, Emily Martin; Kramer, Chris

In recent years there has been significant growth in the size and sheer number of energy efficiency financing programs. The term “energy efficiency financing” refers to debt or debt-like products that support the installation of energy efficiency measures by allowing costs to be spread over time. The implementation of the American Recovery and Reinvestment Act (ARRA) led to a proliferation of energy efficiency financing programs, which was followed in subsequent years by the launch of green banks in several states and the ramp up of other ratepayer-supported financing initiatives in various jurisdictions. These activities have brought increased attention to energymore » efficiency financing as an area of programmatic interest. Yet the propagation of various types of financing in a growing number of markets may have also left some policymakers and program administrators with questions as to what categories of products and programs are best suited for their situation.« less

Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

2018-05-01

Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

Efficient perovskite light-emitting diodes featuring nanometre-sized crystallites

NASA Astrophysics Data System (ADS)

Xiao, Zhengguo; Kerner, Ross A.; Zhao, Lianfeng; Tran, Nhu L.; Lee, Kyung Min; Koh, Tae-Wook; Scholes, Gregory D.; Rand, Barry P.

2017-01-01

Organic-inorganic hybrid perovskite materials are emerging as highly attractive semiconductors for use in optoelectronics. In addition to their use in photovoltaics, perovskites are promising for realizing light-emitting diodes (LEDs) due to their high colour purity, low non-radiative recombination rates and tunable bandgap. Here, we report highly efficient perovskite LEDs enabled through the formation of self-assembled, nanometre-sized crystallites. Large-group ammonium halides added to the perovskite precursor solution act as a surfactant that dramatically constrains the growth of 3D perovskite grains during film forming, producing crystallites with dimensions as small as 10 nm and film roughness of less than 1 nm. Coating these nanometre-sized perovskite grains with longer-chain organic cations yields highly efficient emitters, resulting in LEDs that operate with external quantum efficiencies of 10.4% for the methylammonium lead iodide system and 9.3% for the methylammonium lead bromide system, with significantly improved shelf and operational stability.

Preparation and antibacterial activities of chitosan-gallic acid/polyvinyl alcohol blend film by LED-UV irradiation.

PubMed

Yoon, Soon-Do; Kim, Young-Mog; Kim, Boo Il; Je, Jae-Young

2017-11-01

Active blend films from chitosan-gallic acid (CGA) and polyvinyl alcohol (PVA) were prepared via a simple mixing and casting method through the addition of citric acid as a plasticizer. The CGA/PVA blend films were characterized using Fourier transform infrared spectroscopy (FT-IR). The mechanical properties including tensile strength (TS) and elongation at break (%E), degree of solubility (S) and swelling behavior (DS), water vapor adsorption, and antimicrobial activities of the CGA/PVA blend films with and without LED (light emitting diode)-UV irradiation were also investigated. The CGA/PVA blend films exposed to UV irradiation exerted a higher TS (43.5MPa) and lower %E (50.40), S (0.38) and DS (2.73) compared to the CGA/PVA blend films (TS=41.7MPa, %E=55.40, S=0.42, and DS=3.16) not exposed LED-UV irradiation, indicating that the cross-linkage between CGA and PVA had been strengthened by LED-UV irradiation. However, the water vapor adsorption in the CGA/PVA blend films increased due to the changes of surface roughness and pore volume after LED-UV irradiation, and all values increased by increasing the CGA concentrations in the CGA/PVA blend films. The antimicrobial activities of the CGA/PVA blend films showed that the efficient concentration of CGA in the CGA/PVA blend films was over 1.0%. Taken together, the CGA/PVA blend films have potential for use as food packing materials. Copyright © 2017 Elsevier B.V. All rights reserved.

Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits

DTIC Science & Technology

2009-04-29

bulk material and matches that in quantum wells. While these simple linear relationships hold for spin-polarized light-emitting diodes (spin-LEDs...temperature. The quantum efficiency and hence r| increases with decreasing temperature. The individual circuit elements, 33 therefore, exhibit the...Injection, Threshold Reduction and Output Circular Polarization Modulation in Quantum Well and Quantum Dot Semiconductor Spin Polarized Lasers working

Evaluation of Nutrient Balances as an Indicator for the Impact of Agriculture on Environment - A comparison of Case Studies from the U.S. and Poland

USDA-ARS?s Scientific Manuscript database

Efficient nutrient use is critical to ensure economically and environmentally sound food production while minimizing the impacts of nutrients on ground water, the risk of eutrophication in surface waters, and the emission of trace gases. Increasing concerns for future sustainability have led to deve...

Effects of irrigation on water use and water use efficiency in two fast growing Eucalyptus plantations

Treesearch

Robert M. Hubbard; Jose Stape; Michael G. Ryan; Auro C. Almeida; Juan Rojas

2010-01-01

Eucalyptus plantations occupy almost 20 million ha worldwide and exceed 3.7 million ha in Brazil alone. Improved genetics and silviculture have led to as much as a three-fold increase in productivity in Eucalyptus plantations in Brazil and the large land area occupied by these highly productive ecosystems raises concern over their...

A hole modulator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei; Demir, Hilmi Volkan

2015-02-01

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ˜332 meV to ˜294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

Closing emergency operating rooms improves efficiency.

PubMed

Wullink, Gerhard; Van Houdenhoven, Mark; Hans, Erwin W; van Oostrum, Jeroen M; van der Lans, Marieke; Kazemier, Geert

2007-12-01

Long waiting times for emergency operations increase a patient's risk of postoperative complications and morbidity. Reserving Operating Room (OR) capacity is a common technique to maximize the responsiveness of an OR in case of arrival of an emergency patient. This study determines the best way to reserve OR time for emergency surgery. In this study two approaches of reserving capacity were compared: (1) concentrating all reserved OR capacity in dedicated emergency ORs, and (2) evenly reserving capacity in all elective ORs. By using a discrete event simulation model the real situation was modelled. Main outcome measures were: (1) waiting time, (2) staff overtime, and (3) OR utilisation were evaluated for the two approaches. Results indicated that the policy of reserving capacity for emergency surgery in all elective ORs led to an improvement in waiting times for emergency surgery from 74 (+/-4.4) minutes to 8 (+/-0.5) min. Working in overtime was reduced by 20%, and overall OR utilisation can increase by around 3%. Emergency patients are operated upon more efficiently on elective Operating Rooms instead of a dedicated Emergency OR. The results of this study led to closing of the Emergency OR in the Erasmus MC (Rotterdam, The Netherlands).

Thermo-mechanical properties of carbon nanotubes and applications in thermal management

NASA Astrophysics Data System (ADS)

Nguyen, Manh Hong; Thang Bui, Hung; Trinh Pham, Van; Phan, Ngoc Hong; Nguyen, Tuan Hong; Chuc Nguyen, Van; Quang Le, Dinh; Khoi Phan, Hong; Phan, Ngoc Minh

2016-06-01

Thanks to their very high thermal conductivity, high Young’s modulus and unique tensile strength, carbon nanotubes (CNTs) have become one of the most suitable nano additives for heat conductive materials. In this work, we present results obtained for the synthesis of heat conductive materials containing CNT based thermal greases, nanoliquids and lubricating oils. These synthesized heat conductive materials were applied to thermal management for high power electronic devices (CPUs, LEDs) and internal combustion engines. The simulation and experimental results on thermal greases for an Intel Pentium IV processor showed that the thermal conductivity of greases increases 1.4 times and the saturation temperature of the CPU decreased by 5 °C by using thermal grease containing 2 wt% CNTs. Nanoliquids containing CNT based distilled water/ethylene glycol were successfully applied in heat dissipation for an Intel Core i5 processor and a 450 W floodlight LED. The experimental results showed that the saturation temperature of the Intel Core i5 processor and the 450 W floodlight LED decreased by about 6 °C and 3.5 °C, respectively, when using nanoliquids containing 1 g l-1 of CNTs. The CNTs were also effectively utilized additive materials for the synthesis of lubricating oils to improve the thermal conductivity, heat dissipation efficiency and performance efficiency of engines. The experimental results show that the thermal conductivity of lubricating oils increased by 12.5%, the engine saved 15% fuel consumption, and the longevity of the lubricating oil increased up to 20 000 km by using 0.1% vol. CNTs in the lubricating oils. All above results have confirmed the tremendous application potential of heat conductive materials containing CNTs in thermal management for high power electronic devices, internal combustion engines and other high power apparatus.

Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flemish, Joseph; Soer, Wouter

2015-11-30

Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed formore » highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.« less

Toward scatter-free phosphors in white phosphor-converted light-emitting diodes

PubMed Central

Park, Hoo Keun; Oh, Ji Hye; Rag Do, Young

2012-01-01

Scatter-free phosphors promise to suppress the scattering loss of conventional micro-size powder phosphors in white phosphor-converted light-emitting diodes (pc-LEDs). Large micro-size cube phosphors (~100 μm) are newly designed and prepared as scatter-free phosphors, combining the two scatter-free conditions of particles based on Mie’s scattering theory; the grain size or grain boundary was smaller than 50 nm and the particle size was larger than 30 μm. A careful evaluation of the conversion efficiency and packaging efficiency of the large micro-size cube phosphor-based white pc-LED demonstrated that large micro-size cube phosphors are an outstanding potential candidate for scatter-free phosphors in white pc-LEDs. The luminous efficacy and packaging efficiency of the Y3Al5O12:Ce3+ large micro-size cube phosphor-based pc-LEDs were 123.0 lm/W and 0.87 at 4300 K under 300 mA, which are 17% and 34% higher than those of commercial powder phosphor-based white LEDs (104.8 lm/W and 0.65), respectively. In addition, the introduction of large micro-size cube phosphors can reduce the wide variation in optical properties as a function of both the ambient temperature and applied current compared with those of conventional powder phosphor-based white LEDs. PMID:22535113

Study of process variables in supercritical carbon dioxide extraction of soybeans.

PubMed

Wilkinson, Nikolas; Hilton, Ramsey; Hendry, Doug; Venkitasamy, Chandrasekar; Jacoby, William

2014-01-01

Soybean flakes were extracted using supercritical carbon dioxide at 48.3 MPa and 80 °C, which is a higher temperature than previously reported. Several operational parameters were explored to determine their effect on extractions. Flakes, as typically used in this industry, provided the best extraction performance. Particle size distributions were created through grinding. Reducing average particle diameters smaller than 0.069 mm had no appreciable effect on increasing extraction efficiencies. Exploration of flow rate indicated that a residence time of less than 60 s for the supercritical carbon dioxide would be sufficient for complete extractions. A solvent mass to load mass ratio of 10:1 was found to be sufficient for extraction of oils from soybean flakes. Increasing moisture in the soybeans led to decreasing extraction efficiency of oils. Finally, soybean hulls had no effect on extraction efficiency. Thus, the de-hulling procedure can be removed from the extraction process without decreasing extraction efficiency.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lisitsyn, V. M.; Stepanov, S. A., E-mail: stepanovsa@tpu.ru; Yangyang, Ju

In most promising widespread gallium nitride based LEDs emission is generated in the blue spectral region with a maximum at about 450 nm which is converted to visible light with the desired spectrum by means of phosphor. The thermal energy in the conversion is determined by the difference in the energies of excitation and emission quanta and the phosphor quantum yield. Heat losses manifest themselves as decrease in the luminous efficacy. LED heating significantly reduces its efficiency and life. In addition, while heating, the emission generation output and the efficiency of the emission conversion decrease. Therefore, the reduction of the energymore » losses caused by heating is crucial for LED development. In this paper, heat losses in phosphor-converted LEDs (hereinafter chips) during spectrum conversion are estimated. The limit values of the luminous efficacy for white LEDs are evaluated.« less

Hospital competition and inpatient services efficiency in Taiwan: a longitudinal study.

PubMed

Chu, Chiao-Lee; Chiang, Tung-Liang; Chang, Ray-E

2011-10-01

There is no consistent evidence of the relationship between market competition and hospital efficiency. Some studies indicated that more competition led to a faster patient turnover rate, higher hospital costs, and lower hospital efficiency. Since the 1980s some studies found market competition could increase the efficiency of inpatient services. However, there were few studies testing the market competition during a hospital's earlier stages on its efficiency during later stages, or the dynamic of efficiency. In this study, we examined the effect of early-stage market competition on later-stage hospital efficiency in Taiwan, and we determine the efficiency change using longitudinal study design. The data for the analysis came from the annual national hospital survey of 1996 and 2001 provided by the Department of Health. There were 102 teaching hospital be analysed. The results show that no evidence supports the proposition that higher market competition would improve the efficiency of hospitals in delivering inpatient services in Taiwan. Importantly, neither was the inefficiency score nor the Malmquist productivity index of inpatient services associated with the level of hospital market competition, regardless of the adjustment for hospital characteristics. However, the results may be related with the hospital increasing beds investment behavior. Copyright © 2010 John Wiley & Sons, Ltd.

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

PubMed Central

Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

2016-01-01

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

Effects of Light Curing Method and Exposure Time on Mechanical Properties of Resin Based Dental Materials

PubMed Central

Alpöz, A. Riza; Ertuḡrul, Fahinur; Cogulu, Dilsah; Ak, Asli Topaloḡlu; Tanoḡlu, Metin; Kaya, Elçin

2008-01-01

Objectives The aim of this study was to investigate microhardness and compressive strength of composite resin (Tetric-Ceram, Ivoclar Vivadent), compomer (Compoglass, Ivoclar, Vivadent), and resin modified glass ionomer cement (Fuji II LC, GC Corp) polymerized using halogen light (Optilux 501, Demetron, Kerr) and LED (Bluephase C5, Ivoclar Vivadent) for different curing times. Methods Samples were placed in disc shaped plastic molds with uniform size of 5 mm diameter and 2 mm in thickness for surface microhardness test and placed in a diameter of 4 mm and a length of 2 mm teflon cylinders for compressive strength test. For each subgroup, 20 samples for microhardness (n=180) and 5 samples for compressive strength were prepared (n=45). In group 1, samples were polymerized using halogen light source for 40 seconds; in group 2 and 3 samples were polymerized using LED light source for 20 seconds and 40 seconds respectively. All data were analyzed by two way analysis of ANOVA and Tukey’s post-hoc tests. Results Same exposure time of 40 seconds with a low intensity LED was found similar or more efficient than a high intensity halogen light unit (P>.05), however application of LED for 20 seconds was found less efficient than 40 seconds curing time (P=.03). Conclusions It is important to increase the light curing time and use appropriate light curing devices to polymerize resin composite in deep cavities to maximize the hardness and compressive strength of restorative materials. PMID:19212507

Optical properties of wide gap semiconductors studied by means of cathodoluminescence

NASA Astrophysics Data System (ADS)

Fischer Ponce, Alec Mirco

III-nitride semiconductors have been found to be a suitable material for the fabrication of light-emitting diodes (LEDs) emitting in the visible and ultraviolet range through the use of indium gallium nitride (InGaN) active layers. Yet, achieving high-efficient and long lasting LEDs in the long wavelength range, especially in the green spectral region, is limited by difficulties of growth of InGaN layers with high indium content. Additionally, device efficiency is strongly dependent on the formation of low-resistive p-type gallium nitride (GaN)-based layers. In this dissertation, the optical properties of wide gap semiconductor are analyzed using cathodoluminescence imaging and spectroscopy, and time-resolved spectroscopic techniques. A transition at 3.2 eV in magnesium (Mg)-doped GaN has been revealed and it has been identified as a Mg-related donor-acceptor pair, which may be responsible for the increase in intensity with increasing magnesium concentration in the commonly observed donor-acceptor pair region. In a separate study, a decrease of the Mg acceptor energy level and the bulk resistivity in Mg-doped InGaN with increasing indium composition is observed, implying that InGaN p-layers should improve the device performance. Next, Mg-doped GaN and InGaN capping layers in LED structures grown under different ambient gases are shown to alter the quantum well (QW) luminescence. QWs grown with InGaN p-layers exhibit an improvement in the luminescence efficiency and a blue-shift due to reduction of the compressive misfit strain in the QWs. However, p-GaN layers grown under hydrogen ambient gas present a blue-shift of the QW emission. Hydrogen diffusion occurring after thermal annealing of the p-GaN layer may explain the reduction of piezoelectric field effects in polar InGaN quantum wells. In another study, InGaN QWs with high indium content grown in non-polar m-plane GaN were found to exhibit stacking faults originating at the first QW, relaxing the misfit strain in the subsequent layers. Finally, the optical and structural properties of highly luminescent zinc oxide (ZnO) tetrapod powders emitting in the visible green spectral range were studied with high spatial resolution. ZnO nanostructures are strong candidates for devices emitting light with very high efficiencies.

The effects of spectral tuning of evening ambient light on melatonin suppression, alertness and sleep.

PubMed

Rahman, Shadab A; St Hilaire, Melissa A; Lockley, Steven W

2017-08-01

We compared the effects of bedroom-intensity light from a standard fluorescent and a blue- (i.e., short-wavelength) depleted LED source on melatonin suppression, alertness, and sleep. Sixteen healthy participants (8 females) completed a 4-day inpatient study. Participants were exposed to blue-depleted circadian-sensitive (C-LED) light and a standard fluorescent light (FL, 4100K) of equal illuminance (50lx) for 8h prior to a fixed bedtime on two separate days in a within-subject, randomized, cross-over design. Each light exposure day was preceded by a dim light (<3lx) control at the same time 24h earlier. Compared to the FL condition, control-adjusted melatonin suppression was significantly reduced. Although subjective sleepiness was not different between the two light conditions, auditory reaction times were significantly slower under C-LED conditions compared to FL 30min prior to bedtime. EEG-based correlates of alertness corroborated the reduced alertness under C-LED conditions as shown by significantly increased EEG spectral power in the delta-theta (0.5-8.0Hz) bands under C-LED as compared to FL exposure. There was no significant difference in total sleep time (TST), sleep efficiency (SE%), and slow-wave activity (SWA) between the two conditions. Unlike melatonin suppression and alertness, a significant order effect was observed on all three sleep variables, however. Individuals who received C-LED first and then FL had increased TST, SE% and SWA averaged across both nights compared to individuals who received FL first and then C-LED. These data show that the spectral characteristics of light can be fine-tuned to attenuate non-visual responses to light in humans. Copyright © 2017 Elsevier Inc. All rights reserved.

The health risks associated with energy efficient fluorescent, LEDs, and artificial lighting

NASA Astrophysics Data System (ADS)

Panahi, Allen

2014-09-01

With the phasing out of incandescent lamps in many countries, the introduction of new LED based light sources and luminaries sometimes raise the question of whether the spectral characteristics of the LED and other energy savings Fluorescent lights including the popular CFLs are suitable to replace the traditional incandescent lamps. These concerns are sometimes raised particularly for radiation emissions in the UV and Blue parts of the spectrum. This paper aims to address such concerns for the common `white light' sources typically used in household and other general lighting used in the work place. Recent studies have shown that women working the night shift have an increased probability of developing breast cancer. We like to report on the findings of many studies done by medical professionals, in particular the recent announcement of AMA in the US and many studies conducted in the UK, as well as the European community to increase public awareness on the long term health risks of the optical and opto-biological effects on the human health caused by artificial lighting.

Selecting the optimal synthesis parameters of InP/CdxZn1-xSe quantum dots for a hybrid remote phosphor white LED for general lighting applications.

PubMed

Ryckaert, Jana; Correia, António; Tessier, Mickael D; Dupont, Dorian; Hens, Zeger; Hanselaer, Peter; Meuret, Youri

2017-11-27

Quantum dots can be used in white LEDs for lighting applications to fill the spectral gaps in the combined emission spectrum of the blue pumping LED and a broad band phosphor, in order to improve the source color rendering properties. Because quantum dots are low scattering materials, their use can also reduce the amount of backscattered light which can increase the overall efficiency of the white LED. The absorption spectrum and narrow emission spectrum of quantum dots can be easily tuned by altering their synthesis parameters. Due to the re-absorption events between the different luminescent materials and the light interaction with the LED package, determining the optimal quantum dot properties is a highly non-trivial task. In this paper we propose a methodology to select the optimal quantum dot to be combined with a broad band phosphor in order to realize a white LED with optimal luminous efficacy and CRI. The methodology is based on accurate and efficient simulations using the extended adding-doubling approach that take into account all the optical interactions. The method is elaborated for the specific case of a hybrid, remote phosphor white LED with YAG:Ce phosphor in combination with InP/CdxZn 1-x Se type quantum dots. The absorption and emission spectrum of the quantum dots are generated in function of three synthesis parameters (core size, shell size and cadmium fraction) by a semi-empirical 'quantum dot model' to include the continuous tunability of these spectra. The sufficiently fast simulations allow to scan the full parameter space consisting of these synthesis parameters and luminescent material concentrations in terms of CRI and efficacy. A conclusive visualization of the final performance allows to make a well-considered trade-off between these performance parameters. For the hybrid white remote phosphor LED with YAG:Ce and InP/CdxZn 1-x Se quantum dots a CRI Ra = 90 (with R9>50) and an overall efficacy of 110 lm/W is found.

An Integrated Multilevel Converter with Sigma Delta Control for LED Lighting

NASA Astrophysics Data System (ADS)

Gerber, Daniel L.

High brightness LEDs have become a mainstream lighting technology due to their efficiency, life span, and environmental benefits. As such, the lighting industry values LED drivers with low cost, small form factor, and long life span. Additional specifications that define a high quality LED driver are high efficiency, high power factor, wide-range dimming, minimal flicker, and a galvanically isolated output. The flyback LED driver is a popular topology that satisfies all these specifications, but it requires a bulky and costly flyback transformer. In addition, its passive methods for cancelling AC power ripple require electrolytic capacitors, which have been known to have life span issues. This dissertation details the design, construction, and verification of a novel LED driver that satisfies all the specifications. In addition, it does not require a flyback transformer or electrolytic capacitors, thus marking an improvement over the flyback driver on size, cost, and life span. This dissertation presents an integrated circuit (IC) LED driver, which features a pair of generalized multilevel converters that are controlled via sigma-delta modulation. The first is a multilevel rectifier responsible for power factor correction (PFC) and dimming. The PFC rectifier employs a second order sigma-delta loop to precisely control the input current harmonics and amplitude. The second is a bidirectional multilevel inverter used to cancel AC power ripple from the DC bus. This ripple-cancellation module transfers energy to and from a storage capacitor. It uses a first order sigma-delta loop with a preprogrammed waveform to swing the storage capacitor voltage. The system also contains an output stage that powers the LEDs with DC and provides for galvanic isolation. The output stage consists of an H-bridge stack that connects to the output through a small toroid transformer. The IC LED driver was simulated and prototyped on an ABCD silicon test chip. Testing and verification indicates functional performance for all the modules in the LED driver. The driver exhibits moderate efficiency at half voltage. Although the part was only testable to half voltage, loss models predict that its efficiency would be much higher at full voltage. The driver also meets specifications on the line current harmonics and ripple cancellation. This dissertation introduces multilevel circuit techniques to the IC and LED research space. The prototype's functional performance indicates that integrated multilevel converters are a viable topology for lighting and other similar applications.

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

PubMed Central

Wang, Wenliang; Yang, Weijia; Gao, Fangliang; Lin, Yunhao; Li, Guoqiang

2015-01-01

Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La0.3Sr1.7AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been characterized in detail. The characterizations have revealed that the full-width at half-maximums (FWHMs) for X-ray rocking curves of GaN(0002) and GaN(10-12) are 190.1 and 210.2 arcsec, respectively, indicating that high crystalline quality GaN films have been obtained. The scanning electron microscopy and atomic force microscopy measurements have shown the very smooth p-GaN surface with the surface root-mean-square (RMS) roughness of 1.3 nm. The measurements of low-temperature and room-temperature photoluminescence help to calculate the internal quantum efficiency of 79.0%. The as-grown GaN-based LED wafers have been made into LED chips with the size of 300 × 300 μm2 by the standard process. The forward voltage, the light output power and the external quantum efficiency for LED chips are 19.6 W, 2.78 V, and 40.2%, respectively, at a current of 20 mA. These results reveal the high optoelectronic properties of GaN-based LEDs on LSAT substrates. This work brings up a broad future application of GaN-based devices. PMID:25799042

Design and construction evaluation of a photovoltaic DC LED lighting system

NASA Astrophysics Data System (ADS)

Bhamidipati, Jyotsna

2008-08-01

The market demand for commercialization of Photovoltaic (PV) systems depends a lot on the reliability, efficiency and performance of various components within the system. PV panels produce DC power when exposed to sunlight, and an inverter converts this to AC power in a typical solar powered building. Though, PV lighting has existed for a long time it hasn't been very effective, as incandescent light sources were commonly used which are inefficient. Today fluorescent fixtures are mostly used with PV's due to its high efficacy. Light-emitting diodes present a new vision to energy efficiency in lighting design with their low energy consumption. Current research predicts improved efficiencies of LED light fixtures and their commercial use is a few years away. LEDs which operate on DC voltages when coupled with photovoltaics can be a simple PV lighting application and a sustainable solution with potential for payback. This research evaluates the design and construction of a photovoltaic DC LED lighting system for a solar house at Pennsylvania State University. A detailed cost and payback analysis of a PV DC LED lighting system is presented in this research. PV output simulations for the solar house are presented. Results presented in this research indicate that the Solid state lighting market is evolving rapidly and that LED's are a choice in stand-alone photovoltaic DC lighting systems. The efficiency and the cost-effectiveness of such systems would however improve in the coming years with research and development now focused on PV systems and on Solid state lighting technologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using the small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting stronger quantum confinement. The cubic-phase perovskite NCs were formed despite the reaction temperatures increased from 140 to 180 °C. However, monodispersive NC cubes which are required for densely packing self-assembly film were only formed at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lowermore » temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus, the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.« less

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Lan, Ding; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin

2014-02-01

Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

Development of the electric vehicle analyzer

NASA Astrophysics Data System (ADS)

Dickey, Michael R.; Klucz, Raymond S.; Ennix, Kimberly A.; Matuszak, Leo M.

1990-06-01

The increasing technological maturity of high power (greater than 20 kW) electric propulsion devices has led to renewed interest in their use as a means of efficiently transferring payloads between earth orbits. Several systems and architecture studies have identified the potential cost benefits of high performance Electric Orbital Transfer Vehicles (EOTVs). These studies led to the initiation of the Electric Insertion Transfer Experiment (ELITE) in 1988. Managed by the Astronautics Laboratory, ELITE is a flight experiment designed to sufficiently demonstrate key technologies and options to pave the way for the full-scale development of an operational EOTV. An important consideration in the development of the ELITE program is the capability of available analytical tools to simulate the orbital mechanics of a low thrust, electric propulsion transfer vehicle. These tools are necessary not only for ELITE mission planning exercises but also for continued, efficient, accurate evaluation of DoD space transportation architectures which include EOTVs. This paper presents such a tool: the Electric Vehicle Analyzer (EVA).

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode.

PubMed

Wang, Zhibin; Cheng, Tai; Wang, Fuzhi; Bai, Yiming; Bian, Xingming; Zhang, Bing; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2018-05-31

Stable and efficient red (R), green (G), and blue (B) light sources based on solution-processed quantum dots (QDs) play important roles in next-generation displays and solid-state lighting technologies. The brightness and efficiency of blue QDs-based light-emitting diodes (LEDs) remain inferior to their red and green counterparts, due to the inherently unfavorable energy levels of different colors of light. To solve these problems, a device structure should be designed to balance the injection holes and electrons into the emissive QD layer. Herein, through a simple autoxidation strategy, pure blue QD-LEDs which are highly bright and efficient are demonstrated, with a structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Al:Al2O3. The autoxidized Al:Al2O3 cathode can effectively balance the injected charges and enhance radiative recombination without introducing an additional electron transport layer (ETL). As a result, high color-saturated blue QD-LEDs are achieved with a maximum luminance over 13,000 cd m -2 , and a maximum current efficiency of 1.15 cd A -1 . The easily controlled autoxidation procedure paves the way for achieving high-performance blue QD-LEDs.

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Liwen, E-mail: lwcheng@yzu.edu.cn; Chen, Haitao; Wu, Shudong

2015-08-28

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droopmore » was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.« less

Electrical and Luminescent Properties of Color-Changeable Organic Electroluminescent Diode Using Squarylium Dyes

NASA Astrophysics Data System (ADS)

Mori, Tatsuo; Miyachi, Kiyokazu; Kichimi, Tomoaki; Mizutani, Teruyoshi

1994-12-01

The organic electoluminescent diode (LED) with squarylium (Sq) dye-doped Alq3 changes color upon application of voltage (current). The luminescent color from the organic LED changes from red (electroluminescence (EL) of Sq dye) at low voltage to light green (EL of Alq3) at high voltage. We studied the EL efficiency and EL spectrum of organic Sq-doped Alq3 LED with various doping positions in the emission layer. Consequentially, it was clarified that Sq doping near TPD considerably reduced the EL efficiency. The EL mechanism of the organic LED was concluded to be associated with the energy transfer from the excited Alq3 to the guest dye and hole trapping of the guest dye in Alq3.

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

Dynamic control of supplemental lighting for greenhouse

NASA Astrophysics Data System (ADS)

Wang, Yuanxv; Wei, Ruihua; Xu, Lihong

2018-04-01

The development of light-emitting diodes (LED) technology to a large extent reduce the energy consumption of greenhouse, however, the light control methods to realize the energy saving still have great potential. The aim of this paper is to develop a more efficient control method of dynamic control of the LED top-lighting (TL) intensity and the LED inter-lighting (IL) intensity for the greatest economic benefits. A dynamic lighting control algorithm (DLC) based on model is proposed, which defines the economic benefit performance criterion of the supplemental lighting control. The optimal light intensity of TL and IL is calculated in real time according to the algorithm. The simulation shows that economic benefit can be increased by up to 107.35% compared to TL on-off control. It is concluded that DLC is a feasible supplemental light control method, especially under low natural light conditions.

CALiPER Snapshot Report: Troffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2016-12-01

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

CALiPER Snapshot Report: Industrial Luminaires

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2017-03-01

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes

NASA Astrophysics Data System (ADS)

Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F.; Lundin, Wsevolod V.; Sakharov, Alexei V.; Nikolaev, Andrei E.; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J.; Karpov, Sergey Yu

2017-07-01

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.

PubMed

Barettin, Daniele; Auf der Maur, Matthias; di Carlo, Aldo; Pecchia, Alessandro; Tsatsulnikov, Andrei F; Lundin, Wsevolod V; Sakharov, Alexei V; Nikolaev, Andrei E; Korytov, Maxim; Cherkashin, Nikolay; Hÿtch, Martin J; Karpov, Sergey Yu

2017-07-07

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well (MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical results. The LED samples were grown by metalorganic vapor phase epitaxy, utilizing growth interruption in the hydrogen/nitrogen atmosphere and variable reactor pressure to control the AR microstructure. Realistic configuration of the QD AR implied in simulations was directly extracted from HRTEM characterization of the grown QD-based structures. Multi-scale 2D simulations of the carrier transport inside the multiple QD AR have revealed a non-trivial pathway for carrier injection into the dots. Electrons and holes are found to penetrate deep into the multi-layer AR through the gaps between individual QDs and get into the dots via their side edges rather than via top and bottom interfaces. This enables a more homogeneous carrier distribution among the dots situated in different layers than among the laterally uniform quantum well (QWs) in the MQW AR. As a result, a lower turn-on voltage is predicted for QD-based LEDs, as compared to MQW ones. Simulations did not show any remarkable difference in the efficiencies of the MQW and QD-based LEDs, if the same recombination coefficients are utilized, i.e. a similar crystal quality of both types of LED structures is assumed. Measurements of the current-voltage characteristics of LEDs with both kinds of the AR have shown their close similarity, in contrast to theoretical predictions. This implies the conventional assumption of laterally uniform QWs not to be likely an adequate approximation for the carrier transport in MQW LED structures. Optical characterization of MQW and QD-based LEDs has demonstrated that the later ones exhibit a higher efficiency, which could be attributed to better crystal quality of the grown QD-based structures. The difference in the crystal quality explains the recently observed correlation between the growth pressure of LED structures and their efficiency and should be taken into account while further comparing performances of MQW and QD-based LEDs. In contrast to experimental results, our simulations did not reveal any advantages of using QD-based ARs over the MQW ones, if the same recombination constants are assumed for both cases. This fact demonstrates importance of accounting for growth-dependent factors, like crystal quality, which may limit the device performance. Nevertheless, a more uniform carrier injection into multi-layer QD ARs predicted by modeling may serve as the basis for further improvement of LED efficiency by lowering carrier density in individual QDs and, hence, suppressing the Auger recombination losses.

Impact of groundwater markets in India on water use efficiency: a data envelopment analysis approach.

PubMed

Manjunatha, A V; Speelman, S; Chandrakanth, M G; Van Huylenbroeck, G

2011-11-01

In the hard rock areas of India, overdraft of groundwater has led to negative externalities. It increased costs of groundwater irrigation and caused welfare losses. At the same time informal groundwater markets are slowly emerging and are believed to improve water distribution and to increase water use efficiency in the irrigation sector. These claims are evaluated in this study. For this purpose data was collected from a sample containing three different groups of water users: water sellers, water buyers and a control group of non-traders. First the socio-economic characteristics of these groups are compared. Then the efficiency of water use of the three groups is studied using Data Envelopment Analysis. The results indicate that groundwater markets provide resource poor farmers access to irrigation water, giving them the opportunity to raise their productivity. Water buyers are furthermore shown to be most efficient in their water use, while water sellers are also shown to be more efficient than the control group. The differences in efficiency between the groups are statistically significant. The demonstrated potential of groundwater markets to improve the efficiency of water use and to increase equity in resource access should be taken into account by the Indian government when deciding on their attitude towards the emerging groundwater markets. Copyright © 2011 Elsevier Ltd. All rights reserved.

Photometric optimization and comparison of hybrid white LEDs for mesopic road lighting.

PubMed

Zhang, Chuanwen; Xiao, Licai; Zhong, Ping; He, Guoxing

2018-06-01

The photometric model for the mesopic luminous efficacy (LE m ) of hybrid white LEDs, including the radiant efficiency of both blue and red LEDs as well as the overall quantum efficiency of the phosphor layer or the quantum dot (QD) film, was developed. The optimal spectral parameters of integrated with quantum dots (QD-WLED), phosphor-converted white LED (pc-WLED) with red LEDs instead of red phosphor (pc/R WLED) for both color fidelity index (R f ) and color rendering index (R a ) above 70, 80, and 90 at correlated color temperatures of 2700-6500 K were obtained by maximizing the average LE m of four road lighting standards. By comparing among pc-WLED, QD-WLED, and pc/R WLED, it was suggested that the pc/R WLEDs make strong candidates for mesopic road lighting. The requirements of the overall efficiency of QD film were presented if the QD-WLEDs were competitive to the pc-WLEDs. Finally, the three real pc/R WLEDs with both R f and R a about 80 at CCTs of 2982 K, 4560 K, and 5683 K were demonstrated.

Recent advances in application of UV light-emitting diodes for degrading organic pollutants in water through advanced oxidation processes: A review.

PubMed

Matafonova, Galina; Batoev, Valeriy

2018-04-01

Over the last decade, ultraviolet light-emitting diodes (UV LEDs) have attracted considerable attention as alternative mercury-free UV sources for water treatment purposes. This review is a comprehensive analysis of data reported in recent years (mostly, post 2014) on the application of UV LED-induced advanced oxidation processes (AOPs) to degrade organic pollutants, primarily dyes, phenols, pharmaceuticals, insecticides, estrogens and cyanotoxins, in aqueous media. Heterogeneous TiO 2 -based photocatalysis in lab grade water using UVA LEDs is the most frequently applied method for treating organic contaminants. The effects of controlled periodic illumination, different TiO 2 -based nanostructures and reactor types on degradation kinetics and mineralization are discussed. UVB and UVC LEDs have been used for photo-Fenton, photo-Fenton-like and UV/H 2 O 2 treatment of pollutants, primarily, in model aqueous solutions. Notably, UV LED-activated persulfate/peroxymonosulfate processes were capable of providing degradation in DOC-containing waters. Wall-plug efficiency, energy-efficiency of UV LEDs and the energy requirements in terms of Electrical Energy per Order (E EO ) are discussed and compared. Despite the overall high degradation efficiency of the UV LED-based AOPs, practical implementation is still limited and at lab scale. More research on real water matrices at more environmentally relevant concentrations, as well as an estimation of energy requirements providing fluence-based kinetic data are required. Copyright © 2018 Elsevier Ltd. All rights reserved.

Affordable underwater wireless optical communication using LEDs

NASA Astrophysics Data System (ADS)

Pilipenko, Vladimir; Arnon, Shlomi

2013-09-01

In recent years the need for high data rate underwater wireless communication (WC) has increased. Nowadays, the conventional technology for underwater communication is acoustic. However, the maximum data rate that acoustic technology can provide is a few kilobits per second. On the other hand, emerging applications such as underwater imaging, networks of sensors and swarms of underwater vehicles require much faster data rates. As a result, underwater optical WC, which can provide much higher data rates, has been proposed as an alternative means of communication. In addition to high data rates, affordable communication systems become an important feature in the development requirements. The outcome of these requirements is a new system design based on off-the-shelf components such as blue and green light emitting diodes (LEDs). This is due to the fact that LEDs offer solutions characterized by low cost, high efficiency, reliability and compactness. However, there are some challenges to be met when incorporating LEDs as part of the optical transmitter, such as low modulation rates and non linearity. In this paper, we review the main challenges facing the incorporation of LEDs as an integral part of underwater WC systems and propose some techniques to mitigate the LED limitations in order to achieve high data rate communication

A comparative study of fluorescent and LED lighting in industrial facilities

NASA Astrophysics Data System (ADS)

Perdahci PhD, C.; Akin BSc, H. C.; Cekic Msc, O.

2018-05-01

Industrial facilities have always been in search for reducing outgoings and minimizing energy consumption. Rapid developments in lighting technology require more energy efficient solutions not only for industries but also for many sectors and for households. Addition of solid-state technology has brought LED lamps into play and with LED lamp usage, efficacy level has reached its current values. Lighting systems which uses fluorescent and LED lamps have become the prior choice for many industrial facilities. This paper presents a comparative study about fluorescent and LED based indoor lighting systems for a warehouse building in an industrial facility in terms of lighting distribution values, colour rendering, power consumption, energy efficiency and visual comfort. Both scenarios have been modelled and simulated by using Relux and photometric data for the luminaires have been gathered by conducting tests and measurements in an accredited laboratory.

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Min, Guoquan; Song, Zhitang; Zhang, Jing; Liu, Yanbo; Zhang, Jianping

2010-05-01

This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.

Freeform lens design for LED collimating illumination.

PubMed

Chen, Jin-Jia; Wang, Te-Yuan; Huang, Kuang-Lung; Liu, Te-Shu; Tsai, Ming-Da; Lin, Chin-Tang

2012-05-07

We present a simple freeform lens design method for an application to LED collimating illumination. The method is derived from a basic geometric-optics analysis and construction approach. By using this method, a highly collimating lens with LED chip size of 1.0 mm × 1.0 mm and optical simulation efficiency of 86.5% under a view angle of ± 5 deg is constructed. To verify the practical performance of the lens, a prototype of the collimator lens is also made, and an optical efficiency of 90.3% with a beam angle of 4.75 deg is measured.

The LED outdoor lighting revolution : Opportunities, threats and mitigation

NASA Astrophysics Data System (ADS)

Aube, Martin

2017-01-01

The presence of artificial light at night (ALAN) in environment is now known to have non negligible consequences on the night sky, the fauna, the flora and the human health. A real revolution is undergoing in the outdoor lighting industry threatens the night integrity. This revolution is driven by the advent of the cost-effective Light-Emitting Diode (LED) technology into the outdoor lighting industry. The LEDs provides many opportunities: they are long lasting, easily controlled, and generally allow a more efficient photometric design which, in term, may result in energy savings.After explaining the complex and non-linear behaviour of the propagation of the ALAN into the nocturnal environment, we will outline the potential impact of the ALAN on the human health and on the night sky, and we will introduce some dedicated indicators for its evaluation. We will focus on the role of the blue content of the ALAN in the evaluation of its impact. More specifically we will show how white LED technology, that often shows increased blue light content, compares to the traditional High Pressure Sodium technology. Finally, we will identify the possible mitigations to restrict the adverse impacts of the white LEDs in the urban and rural environment.

The potential influence of LED lighting on mental illness.

PubMed

Bauer, Michael; Glenn, Tasha; Monteith, Scott; Gottlieb, John F; Ritter, Philipp S; Geddes, John; Whybrow, Peter C

2018-02-01

Two recent scientific breakthroughs may alter the treatment of mental illness, as discussed in this narrative review. The first was the invention of white light-emitting diodes (LEDs), which enabled an ongoing, rapid transition to energy-efficient LEDs for lighting, and the use of LEDs to backlight digital devices. The second was the discovery of melanopsin-expressing photosensitive retinal ganglion cells, which detect environmental irradiance and mediate non-image forming (NIF) functions including circadian entrainment, melatonin secretion, alertness, sleep regulation and the pupillary light reflex. These two breakthroughs are interrelated because unlike conventional lighting, white LEDs have a dominant spectral wavelength in the blue light range, near the peak sensitivity for the melanopsin system. Pertinent articles were identified. Blue light exposure may suppress melatonin, increase alertness, and interfere with sleep in young, healthy volunteers and in animals. Areas of concern in mental illness include the influence of blue light on sleep, other circadian-mediated symptoms, prescribed treatments that target the circadian system, measurement using digital apps and devices, and adolescent sensitivity to blue light. While knowledge in both fields is expanding rapidly, future developments must address the potential impact of blue light on NIF functions for healthy individuals and those with mental illness.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Guohong

2008-01-01

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS.

Energy efficient lighting and communications

NASA Astrophysics Data System (ADS)

Zhou, Z.; Kavehrad, M.; Deng, P.

2012-01-01

As Light-Emitting Diode (LED)'s increasingly displace incandescent lighting over the next few years, general applications of Visible Light Communication (VLC) technology are expected to include wireless internet access, vehicle-to-vehicle communications, broadcast from LED signage, and machine-to-machine communications. An objective in this paper is to reveal the influence of system parameters on the power distribution and communication quality, in a general plural sources VLC system. It is demonstrated that sources' Half-Power Angles (HPA), receivers' Field-Of Views (FOV), sources layout and the power distribution among sources are significant impact factors. Based on our findings, we developed a method to adaptively change working status of each LED respectively according to users' locations. The program minimizes total power emitted while simultaneously ensuring sufficient light intensity and communication quality for each user. The paper also compares Orthogonal Frequency-Division Multiplexing (OFDM) and On-Off Keying (OOK) signals performance in indoor optical wireless communications. The simulation is carried out for different locations where different impulse response distortions are experienced. OFDM seems a better choice than prevalent OOK for indoor VLC due to its high resistance to multi-path effect and delay spread. However, the peak-to-average power limitations of the method must be investigated for lighting LEDs.

Liquid cooling applications on automotive exterior LED lighting

NASA Astrophysics Data System (ADS)

Aktaş, Mehmet; Şenyüz, Tunç; Şenyıldız, Teoman; Kılıç, Muhsin

2018-02-01

In this study cooling of a LED unit with heatsink and liquid cooling block which is used in automotive head lamp applications has been investigated numerically and experimentally. Junction temperature of a LED which is cooled with heatsink and liquid cooling block obtained in the experiment. 23°C is used both in the simulation and the experiment phase. Liquid cooling block material is choosed aluminium (Al) and polyamide. All tests and simulation are performed with three different flow rate. Temperature distribution of the designed product is investigated by doing the numerical simulations with a commercially software. In the simulations, fluid flow is assumed to be steady, incompressible and laminar and 3 dimensional (3D) Navier-Stokes equations are used. According to the calculations it is obtained that junction temperature is higher in the heatsink design compared to block cooled one. By changing the block material, it is desired to investigate the variation on the LED junction temperature. It is found that more efficient cooling can be obtained in block cooling by using less volume and weight. With block cooling lifetime of LED can be increased and flux loss can be decreased with the result of decreased junction temperature.

Photocatalytic degradation of humic substances in aqueous solution using Cu-doped ZnO nanoparticles under natural sunlight irradiation.

PubMed

Maleki, Afshin; Safari, Mahdi; Shahmoradi, Behzad; Zandsalimi, Yahya; Daraei, Hiua; Gharibi, Fardin

2015-11-01

In this study, Cu-doped ZnO nanoparticles were investigated as an efficient synthesized catalyst for photodegradation of humic substances in aqueous solution under natural sunlight irradiation. Cu-doped ZnO nanocatalyst was prepared through mild hydrothermal method and was characterized using FT-IR, powder XRD and SEM techniques. The effect of operating parameters such as doping ratio, initial pH, catalyst dosage, initial concentrations of humic substances and sunlight illuminance were studied on humic substances degradation efficiency. The results of characterization analyses of samples confirmed the proper synthesis of Cu-doped ZnO nanocatalyst. The experimental results indicated the highest degradation efficiency of HS (99.2%) observed using 1.5% Cu-doped ZnO nanoparticles at reaction time of 120 min. Photocatalytic degradation efficiency of HS in a neutral and acidic pH was much higher than that at alkaline pH. Photocatalytic degradation of HS was enhanced with increasing the catalyst dosage and sunlight illuminance, while increasing the initial HS concentration led to decrease in the degradation efficiency of HS. Conclusively, Cu-doped ZnO nanoparticles can be used as a promising and efficient catalyst for degradation of HS under natural sunlight irradiation.

CALiPER Snapshot Report: Outdoor Area Lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2016-09-30

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

CALiPER Snapshot Report: Outdoor Area Lighting - 2017

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2017-09-29

Snapshot reports use data from DOE's LED Lighting Facts product list to compare the LED performance to standard technologies, and are designed to help lighting retailers, distributors, designers, utilities, energy efficiency program sponsors, and other stakeholders understand the current state of the LED market and its trajectory.

[Removal of volatile organic compounds in soils by soil vapor extraction (SVE)].

PubMed

Yin, Fu-xiang; Zhang, Sheng-tian; Zhao, Xin; Feng, Ke; Lin, Yu-suo

2011-05-01

An experiment study has been carried out to investigate effects of the diameter of soil columns, the size of soil particulate and different contaminants on efficiency of simulated soil vapor extraction (SVE). Experiments with benzene, toluene, ethylbenzene and n-propylbenzene contaminated soils showed that larger bottom area/soil height (S/H) of the columns led to higher efficiency on removal of contaminants. Experiments with contaminated soils of different particulate size showed that the efficiency of SVE decreased with increases in soil particulate size, from 10 mesh to between 20 mesh and 40 mesh and removal of contaminants in soils became more difficult. Experiments with contaminated soils under different ventilation rates suggested that soil vapor extraction at a ventilation rate of 0.10 L x min(-1) can roughly remove most contaminants from the soils. Decreasing of contaminants in soils entered tailing stages after 12 h, 18 h and 48 h for benzene, toluene and ethylbenzene, respectively. Removal rate of TVOCs (Total VOCs) reached a level as high as 99.52%. The results of the experiment have indicated that molecule structure and properties of the VOCs are also important factors which have effects on removal rates of the contaminants. Increases in carbon number on the benzene ring, decreases in vapor pressure and volatile capability resulted in higher difficulties in soil decontamination. n-propylbenzene has a lower vapor pressure than toluene and ethylbenzene which led to a significant retard effect on desorption and volatilization of benzene and ethylbenzene.

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng

2011-07-14

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array

PubMed Central

Hu, Jinyong; Wang, Hong

2014-01-01

Three-dimensional (3D) backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency (LEE) for GaN-based light-emitting diode (LED) chips. A triangle-lattice of microscale SiO2 cone array followed by a 16-pair Ti3O5/SiO2 distributed Bragg reflector (16-DBR) was proposed to be attached on the backside of sapphire substrate, and the light-output enhancement was demonstrated by numerical simulation and experiments. The LED chips with flat reflectors or 3D reflectors were simulated using Monte Carlo ray tracing method. It is shown that the LEE increases as the reflectivity of backside reflector increases, and the light-output can be significantly improved by 3D reflectors compared to flat counterparts. It can also be observed that the LEE decreases as the refractive index of the cone material increases. The 3D 16-DBR patterned by microscale SiO2 cone array benefits large enhancement of LEE. This microscale pattern was prepared by standard photolithography and wet-etching technique. Measurement results show that the 3D 16-DBR can provide 12.1% enhancement of wall-plug efficiency, which is consistent with the simulated value of 11.73% for the enhancement of LEE. PMID:25133262

Plant experiments with light-emitting diode module in Svet space greenhouse

NASA Astrophysics Data System (ADS)

Ilieva, Iliana; Ivanova, Tania; Naydenov, Yordan; Dandolov, Ivan; Stefanov, Detelin

2010-10-01

Light is necessary for photosynthesis and shoot orientation in the space plant growth facilities. Light modules (LM) must provide sufficient photosynthetic photon flux for optimal efficiency of photosynthetic processes and also meet the constraints for power, volume and mass. A new LM for Svet space greenhouse using Cree® XLamp® 7090 XR light-emitting diodes (LEDs) was developed. Monochromic LEDs emitting in the red, green, and blue regions of the spectrum were used. The LED-LM contains 36 LED spots - 30 LED spots with one red, green and blue LED and 6 LED spots with three red LEDs. Digital Multiplex Control Unit controls the LED spots and can set 231 levels of light intensity thus achieving Photosynthetic Photon Flux Density (PPFD) in the range 0-400 μmol m -2 s -1 and different percentages of the red, green and blue light, depending on the experimental objectives. Two one-month experiments with plants - lettuce and radicchio were carried out at 400 μmol m -2 s -1 PPFD (high light - HL) and 220 μmol m -2 s -1 PPFD (low light - LL) and 70% red, 20% green and 10% blue light composition. To evaluate the efficiency of photosynthesis, in vivo modulated chlorophyll fluorescence was measured by Pulse Amplitude Modulation (PAM) fluorometer on leaf discs and the following parameters: effective quantum yield of Photosystem II ( ΦPSII) and non-photochemical quenching (NPQ) were calculated. Both lettuce and radicchio plants grown at LL express higher photochemical activity of Photosystem II (PSII) than HL grown plants, evaluated by ΦPSII. Accelerated rise in NPQ in both LL grown plants was observed, while steady state NPQ values were higher in LL grown lettuce plants and did not differ in LL and HL grown radicchio plants. The extent of photoinhibition process in both plants was evaluated by changes in malonedialdehyde (MDA) concentration, peroxidase (POX) activity and hydrogen peroxide (H 2O 2) content. Accumulation of high levels of MDA and increased POX activity correlating with decreased H 2O 2 content were observed in both HL grown plants. These biochemical indicators revealed higher sensitivity to photodamage in HL grown lettuce and radicchio plants. LL conditions resulted in more effective functioning of PSII than HL when lettuce and radicchio plants were grown at 70% red, 20% green and 10% blue light composition.

Evaluation of inorganic and organic light-emitting diode displays for signage application

NASA Astrophysics Data System (ADS)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the conventional, inorganic LEDs. But, signage panels based on OLEDs can be made cheaper by avoiding the use of acrylic sheet and reflective gratings. Moreover, the distributed light output and light weight of OLEDs and the potential to be built inexpensively on flexible substrates can make OLEDs more beneficial for future signage applications than the inorganic LEDs.

Energy efficiency as a commodity: The emergence of a secondary market for efficiency savings in commercial buildings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kats, G.H.; Rosenfield, A.H.; McIntosh, T.A.

1997-06-01

The energy efficiency industry is constrained by lack of financing. For example, in the United States, commercial and public buildings need an investment of $100 billion for cost-effective retrofits with an average payback of about four years. But the current level of financing is stagnant at only about 34% of this level per year. The U.S. Department of Energy (DOE) has led the development of the North American Energy Measurement and Verification Protocol (NEMVP). This Protocol will increase the reliability and quality of estimated efficiency savings and improve realized savings. A critical element in the development of low cost financingmore » and a secondary market--whether for homes or credit card debt--is the adoption of protocols to provide uniformity and reliability of the product. This is also true of energy efficiency installations, which have been characterized by inconsistency in the installation methodologies and, frequently, unreliability of savings. This Protocol, published in April 1996, is a DOE-led effort involving American Society of Heating, Refrigerating, and Air-Conditioning Engineers, Inc. ASHRAE, National Association of Energy Service Companies NAESCO, National Association of Regulatory Utility Commissioners NARUC, National Association of State Energy Officials NASEO, US Environmental Protection Agency EPA, Canada`s Canadian Association of Energy Service Companies CAESCO, and Mexico`s Comision Nacional Para El Ahorro De Energia CONAE and Fideicomiso De Apoyo Al Programa De Ahorro De Energia Del Sector Electrico FIDE. DOE has begun to build on this Protocol to develop new forms of lower-cost financing including, ultimately, development of a secondary market for energy efficiency. This could double financing for building energy efficiency within five years.« less

Evaluation of health resource utilization efficiency in community health centers of Jiangsu Province, China.

PubMed

Xu, Xinglong; Zhou, Lulin; Antwi, Henry Asante; Chen, Xi

2018-02-20

While the demand for health services keep escalating at the grass roots or rural areas of China, a substantial portion of healthcare resources remain stagnant in the more developed cities and this has entrenched health inequity in many parts of China. At its conception, China's Deepen Medical Reform started in 2012 was intended to flush out possible disparities and promote a more equitable and efficient distribution of healthcare resources. Nearly half a decade of this reform, there are uncertainties as to whether the attainment of the objectives of the reform is in sight. Using a hybrid of panel data analysis and an augmented data envelopment analysis (DEA), we model human resources, material, finance to determine their technical and scale efficiency to comprehensively evaluate the transverse and longitudinal allocation efficiency of community health resources in Jiangsu Province. We observed that the Deepen Medical Reform in China has led to an increase concern to ensure efficient allocation of community health resources by health policy makers in the province. This has led to greater efficiency in health resource allocation in Jiangsu in general but serious regional or municipal disparities still exist. Using the DEA model, we note that the output from the Community Health Centers does not commensurate with the substantial resources (human resources, materials, and financial) invested in them. We further observe that the case is worst in less-developed Northern parts of Jiangsu Province. The government of Jiangsu Province could improve the efficiency of health resource allocation by improving the community health service system, rationalizing the allocation of health personnel, optimizing the allocation of material resources, and enhancing the level of health of financial resource allocation.

Significant reduction in energy for plant-growth lighting in space using targeted LED lighting and spectral manipulation

NASA Astrophysics Data System (ADS)

Poulet, L.; Massa, G. D.; Morrow, R. C.; Bourget, C. M.; Wheeler, R. M.; Mitchell, C. A.

2014-07-01

Bioregenerative life-support systems involving photoautotrophic organisms will be necessary to sustain long-duration crewed missions at distant space destinations. Since sufficient sunlight will not always be available for plant growth at many space destinations, efficient electric-lighting solutions are greatly needed. The present study demonstrated that targeted plant lighting with light-emitting diodes (LEDs) and optimizing spectral parameters for close-canopy overhead LED lighting allowed the model crop leaf lettuce (Lactuca sativa L. cv. 'Waldmann's Green') to be grown using significantly less electrical energy than using traditional electric-lighting sources. Lettuce stands were grown hydroponically in a growth chamber controlling temperature, relative humidity, and CO2 level. Several red:blue ratios were tested for growth rate during the lag phase of lettuce growth. In addition, start of the exponential growth phase was evaluated. Following establishment of a 95% red + 5% blue spectral balance giving the best growth response, the energy efficiency of a targeted lighting system was compared with that of two total coverage (untargeted) LED lighting systems throughout a crop-production cycle, one using the same proportion of red and blue LEDs and the other using white LEDs. At the end of each cropping cycle, whole-plant fresh and dry mass and leaf area were measured and correlated with the amount of electrical energy (kWh) consumed for crop lighting. Lettuce crops grown with targeted red + blue LED lighting used 50% less energy per unit dry biomass accumulated, and the total coverage white LEDs used 32% less energy per unit dry biomass accumulated than did the total coverage red + blue LEDs. An energy-conversion efficiency of less than 1 kWh/g dry biomass is possible using targeted close-canopy LED lighting with spectral optimization. This project was supported by NASA grant NNX09AL99G.

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

NASA Astrophysics Data System (ADS)

Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit

2015-03-01

Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 - 4.5 x 1016 cm-3 , the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2x107 s-1, 8.8x10-10 cm3s-1), (8.5x107 s-1, 6.6x10-10 cm3s-1), and (6.5x107 s-1, 1.4x10-10 cm3s-1) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τrad α Tn/2, the dimensionality n of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ~T1.5 dependence, suggesting a three-dimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (~T1) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohite, Aditya; Blancon, Jean-Christophe

In the eternal search for next generation high-efficiency solar cells and LEDs, scientists at Los Alamos National Laboratory and their partners are gaining an extra degree of freedom in designing and fabricating efficient optoelectronic devices based on 2D layered hybrid perovskites. Industrial applications could include low cost solar cells, LEDs, laser diodes, detectors, and other nano-optoelectronic devices. The 2D, near-single-crystalline “Ruddlesden-Popper” thin films have an out-of-plane orientation so that uninhibited charge transport occurs through the perovskite layers in planar devices. The new research finds the existence of “layer-edge-states” at the edges of the perovskite layers which are key to bothmore » high efficiency of solar cells (greater than 12 percent) and high fluorescence efficiency (a few tens of percent) for LEDs. The spontaneous conversion of excitons (bound electron-hole pairs) to free carriers via these layer-edge states appears to be the key to the improvement of the photovoltaic and light-emitting thin film layered materials.« less

A high-performance doped photocatalysts for inactivation of total coliforms in superficial waters using different sources of radiation.

PubMed

Claro, Elis Marina Turini; Bidoia, Ederio Dino; de Moraes, Peterson Bueno

2016-07-15

Photocatalytic water treatment has a currently elevated electricity demand and maintenance costs, but the photocatalytic water treatment may also assist in overcoming the limitations and drawbacks of conventional water treatment processes. Among the Advanced Oxidation Processes, heterogeneous photocatalysis is one of the most widely and efficiently used processes to degrade and/or remove a wide range of polluting compounds. The goal of this work was to find out a highly efficient photocatalytic disinfection process in superficial water with different doped photocatalysts and using three sources of radiation: mercury vapor lamp, solar simulator and UV-A LED. Three doped photocatalysts were prepared, SiZnO, NSiZnO and FNSiZnO. The inactivation efficiency of each synthesized photocatalysts was compared to a TiO2 P25 (Degussa(®)) 0.5 g L(-1) control. Photolysis inactivation efficiency was 85% with UV-A LED, which is considered very high, demanding low electricity consumption in the process, whereas mercury vapor lamp and solar simulator yielded 19% and 13% inactivation efficiency, respectively. The best conditions were found with photocatalysts SiZnO, FNSiZnO and NSiZnO irradiated with UV-A LED, where efficiency exceeded 95% that matched inactivation of coliforms using the same irradiation and photocatalyst TiO2. All photocatalysts showed photocatalytic activity with all three radiation sources able to inactivate total coliforms from river water. The use of UV-A LED as the light source without photocatalyst is very promising, allowing the creation of cost-effective and highly efficient water treatment plants. Copyright © 2016 Elsevier Ltd. All rights reserved.

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients.

PubMed

Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew; Oh, Sang H; Nami, Mohsen; DenBaars, Steve P; Feezell, Daniel

2017-08-07

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar (202¯1¯) InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 A/cm 2 to 10 kA/cm 2 , and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density (n) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative (A), radiative (B), and Auger (C) recombination coefficients and their n-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher A and a nearly two-fold higher B0 for this semipolar orientation compared to that of c-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar (202¯1¯) is found to be lower than the carrier density in c-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower C0 compared to c-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher B 0 coefficient, and lower C 0 (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar (202¯1¯) LEDs.

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Rashidi, Arman; Aragon, Andrew; Oh, Sang H.; Nami, Mohsen; DenBaars, Steve P.; Feezell, Daniel

2017-08-01

We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\\bar 2\\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier lifetime is analyzed for various injection current densities from 5 $A/cm^2$ to 10 $kA/cm^2$, and the corresponding carrier densities are obtained. The coupling of internal quantum efficiency and differential carrier lifetime vs injected carrier density ($n$) enables the separation of the radiative and nonradiative recombination lifetimes and the extraction of the Shockley-Read-Hall (SRH) nonradiative ($A$), radiative ($B$), and Auger ($C$) recombination coefficients and their $n$-dependency considering the saturation of the SRH recombination rate and phase-space filling. The results indicate a three to four-fold higher $A$ and a nearly two-fold higher $B_0$ for this semipolar orientation compared to that of $c$-plane reported using a similar approach [A. David and M. J. Grundmann, Appl. Phys. Lett. 96, 103504 (2010)]. In addition, the carrier density in semipolar $(20\\bar 2\\bar 1)$ is found to be lower than the carrier density in $c$-plane for a given current density, which is important for suppressing efficiency droop. The semipolar LED also shows a two-fold lower $C_0$ compared to $c$-plane, which is consistent with the lower relative efficiency droop for the semipolar LED (57% vs. 69%). The lower carrier density, higher $B_0$ coefficient, and lower $C_0$ (Auger) coefficient are directly responsible for the high efficiency and low efficiency droop reported in semipolar $(20\\bar 2\\bar 1)$ LEDs.

Testing high brightness LEDs relative to application environment

NASA Astrophysics Data System (ADS)

Singer, Jeffrey; Mangum, Scott; Lundberg, John

2006-08-01

Application of light emitting diodes is expanding as the luminous output and efficiencies of these devices improve. At the same time, the number of LED package types is increasing, making it challenging to determine the appropriate device for use in lighting product designs. A range of factors should be considered when selecting a LED for an application including color coordinates, luminous efficacy, cost, lumen maintenance, application life, packaging and manufacturability. Additional complexities can be introduced as LED packages become obsolete and replacement parts must be selected. The replacement LED characteristics must be understood and assessed against the parameters of the original device, in order to determine if the change will be relatively simple or will force other end-product changes. While some characteristics are readily measured and compared, other factors, such as lumen maintenance, are difficult to verify. This paper will discuss the characteristics of a LED that should be considered during the design process as well as methods to validate these characteristics, particularly those which are not typically on data sheets or, are critical to the design and warrant additional validation. Particular attention will be given to LED lumen maintenance. While published manufacturer data typically provides temperature versus performance curves, the data may not be useful depending upon the application's operating environment. Models must be created to estimate the LED's junction temperature and degradation curve at the applied temperature in order to develop a more precise life estimate. This paper presents one approach to a LED device life and performance study designed with application environments in mind.

Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Hwankyo; Kim, Dae-Hyun; Seong, Tae-Yeon

2017-11-01

We investigated the electrical performance of near ultraviolet (NUV) (390 nm) light-emitting diodes (LEDs) fabricated with various semi-transparent Cr/ITO n-type contacts. It was shown that after annealing at 400 °C, Cr/ITO (10 nm/40 nm) contact was ohmic with a specific contact resistance of 9.8 × 10-4 Ωcm2. NUV AlGaN-based LEDs fabricated with different Cr/ITO (6-12 nm/40 nm) electrodes exhibited forward-bias voltages of 3.27-3.30 V at an injection current of 20 mA, which are similar to that of reference LED with Cr/Ni/Au (20 nm/25 nm/200 nm) electrode (3.29 V). The LEDs with the Cr/ITO electrodes gave series resistances of 10.69-11.98 Ω, while the series resistance is 10.84 Ohm for the reference LED. The transmittance of the Cr/ITO samples significantly improved when annealed at 400 °C. The transmittance (25.8-45.2% at 390 nm) of the annealed samples decreased with increasing Cr layer thickness. The LEDs with the Cr/ITO electrodes exhibited higher light output power than reference LED (with Cr/Ni/Au electrode). In particular, the LED with the Cr/ITO (12 nm/40 nm) electrode showed 9.3% higher light output power at 100 mA than reference LED. Based on the X-ray photoemission spectroscopy (XPS) and electrical results, the ohmic formation mechanism is described and discussed.

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

PubMed

Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

2018-06-01

The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

Treatment of crystallized-fruit wastewater by UV-A LED photo-Fenton and coagulation-flocculation.

PubMed

Rodríguez-Chueca, Jorge; Amor, Carlos; Fernandes, José R; Tavares, Pedro B; Lucas, Marco S; Peres, José A

2016-02-01

This work reports the treatment of crystallized-fruit effluents, characterized by a very low biodegradability (BOD5/COD <0.19), through the application of a UV-A LED photo-Fenton process. Firstly, a Box-Behnken design of Response Surface Methodology was applied to achieve the optimal conditions for the UV-A LED photo-Fenton process, trying to maximize the efficiency by saving chemicals and time. Under the optimal conditions ([H2O2] = 5459 mg/L; [Fe(3+)] = 286 mg/L; time >180 min), a COD removal of 45, 64 and 74% was achieved after 360 min, using an irradiance of 23, 70 and 85 W/m(2) respectively. Then a combination of UV-A LED photo-Fenton with coagulation-flocculation-decantation attained a higher COD removal (80%), as well as almost total removal of turbidity (99%) and total suspended solids (95%). Subsequent biodegradability of treated effluents increased, allowing the application of a biological treatment step after the photochemical/CFD with 85 W/m(2). Copyright © 2015 Elsevier Ltd. All rights reserved.

Analysis of the abnormal voltage-current behaviors on localized carriers of InGaN/GaN multiple quantum well from electron blocking layer

NASA Astrophysics Data System (ADS)

Nam, Giwoong; Kim, Byunggu; Leem, Jae-Young; Lee, Dong-Yul; Kim, Jong Su; Kim, Jin Soo

2013-11-01

The effect of an electron blocking layer (EBL) on the V — I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p-AlGaN EBL is larger than it is without the p-AlGaN EBL at low injection currents because the Mg-doping efficiency for the p-GaN layer is higher than that for the p-AlGaN layer. However, the forward voltage in LEDs with a p-AlGaN EBL is smaller than it is without the p-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a p-AlGaN EBL, in case of LEDs with a p-AlGaN EBL, the carriers are blocked by the EBL.

Multicolor white light-emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

Chi, Solomon W. S.; Chen, Tzer-Perng; Tu, Chuan-Cheng; Chang, Chih-Sung; Tsai, Tzong-Liang; Hsieh, Mario C. C.

2004-01-01

Semiconductor light emitting diode (LED) has become a promising device for general-purpose illumination applications. LED has the features of excellent durability, long operation life, low power consumption, no mercury containing and potentially high efficiency. Several white LED technologies appear capable of meeting the technical requirements of illumination. In this paper we present a new multi-color white (MCW) LED as a high luminous efficacy, high color rendering index and low cost white illuminator. The device consists of two LED chips, one is AlInGaN LED for emitting shorter visible spectra, another is AlInGaP LED for emitting longer visible spectra. At least one chip in the MCW-LED has two or more transition energy levels used for emitting two or more colored lights. The multiple colored lights generated from the MCW-LED can be mixed into a full-spectral white light. Besides, there is no phosphors conversion layer used in the MCW-LED structure. Therefore, its color rendering property and illumination efficiency are excellent. The Correlated Color Temperature (CCT) of the MCW-LED may range from 2,500 K to over 10,000 K. The theoretical General Color Rendering Index (Ra) could be as high as 94, which is close to the incandescent and halogen sources, while the Ra of binary complementary white (BCW) LED is about 30 ~ 45. Moreover, compared to the expensive ternary RGB (Red AlInGaP + Green AlInGaN + Blue AlInGaN) white LED sources, the MCW-LED uses only one AlInGaN chip in combination with one cheap AlInGaP chip, to form a low cost, high luminous performance white light source. The MCW-LED is an ideal light source for general-purpose illumination applications.

Mechanisms of Loss in Internal Quantum Efficiency in III-Nitride-based Blue-and Green-Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Huang, Li

The overarching goals of the research conducted for this dissertation have been to understand the scientific reasons for the losses in the internal quantum efficiency (IQE) in Group III-nitride-based blue and especially green light-emitting diodes (LEDs) containing a multi-quantum well (MQW) active region and to simultaneously develop LED epitaxial structures to ameliorate these losses. The p-type AlGaN EBL was determined to be both mandatory and effective in the prevention of electron overflow from the MQW region into the p-type cladding layer and the resultant lowering of the IQE. The overflow phenomenon was partially due to the low concentration (˜ 5 x 1017 cm-3) and mobility (˜ 10 cm2/(V•s)) of the holes injected into the active region. Electroluminescence (EL) studies of LEDs without an EBL revealed a dominant emission from donor-acceptor pair recombination in the p-type GaN layer. The incorporation of a 90 nm compositionally graded In0-0.1 Ga1-0.9N buffer layer between each MQW and n-GaN cladding layer grown on an Al/SiC substrate resulted in an increase in the luminescence intensity and a blue-shift in the emission wavelength, as observed in photoluminescence (PL) spectra. The graded InGaN buffer layer reduced the stress and thus the piezoelectric field across the MQW; this improved the electron/hole overlap that, in turn, resulted in an enhanced radiative recombination rate and an increase in efficiency. A direct correlation was observed between an increase in the IQE measured in temperature-dependent PL (TDPL) and an increase in the roughness of all the upper InGaN QW/GaN barrier interfaces, as determined using cross-sectional transmission electron microscopy of the MQW. These results agreed in general with the average surface roughness values of the pit-free region on the top GaN barrier determined via atomic force microscopy and the average roughness values of all the interfaces in the MQW calculated from the FWHM of the emission peak in the PL spectra acquired at 10 K for LED structures grown on both SiC and GaN substrates. This improvement occurred as a result of carrier localization at the rougher interfaces that, in turn, resulted in shorter carrier lifetimes and faster decay rates, as determined using time-resolved PL. The peak current densities determined from the curves of external quantum efficiency as a function of current density calculated from EL spectra acquired from a set of LEDs having 3 QWs, 5 QWs, and 6 QWs were 63 A/cm2, 78 A/cm2 and 78 A/cm2, respectively. These data indicated that the minority carrier (holes) in our powered devices penetrated into at least the 4th QW from the top p-type cladding layer. The peak emission from these LEDs occurred at 522 nm. The hole density decreased with distance away from the top p-type layer. Finally, a new process route was developed in this research for the epitaxial deposition of GaN(0001) thin films on chemo-mechanically polished GaN(0001) substrates. The latter possessed threading dislocations (TDs) having a density of the order of 5 x 107 cm-2, predominantly edge in character and oriented along [0001]. Step-flow-controlled growth of the films was achieved; thus, no additional TDs were generated at the film/substrate interface. The density of V-defects in InGaN films and in subsequently grown MQWs containing In0.26Ga0.74N wells grown on the GaN substrates was also reduced to within an order of 107 cm -2. The density of the latter defects was determined to be a function of both the density of the TDs and the growth temperature when the latter was > 900 °C. (Abstract shortened by UMI.)

In search of efficient 5-endo-dig cyclization of a carbon-centered radical: 40 years from a prediction to another success for the Baldwin rules.

PubMed

Alabugin, Igor V; Timokhin, Vitaliy I; Abrams, Jason N; Manoharan, Mariappan; Abrams, Rachel; Ghiviriga, Ion

2008-08-20

Despite being predicted to be stereoelectronically favorable by the Baldwin rules, efficient formation of a C-C bond through a 5-endo-dig radical cyclization remained unknown for more than 40 years. This work reports a remarkable increase in the efficiency of this process upon beta-Ts substitution, which led to the development of an expedient approach to densely functionalized cyclic 1,3-dienes. Good qualitative agreement between the increased efficiency and stereoselectivity for the 5-endo-dig cyclization of Ts-substituted vinyl radicals and the results of density functional theory analysis further confirms the utility of computational methods in the design of new radical processes. Although reactions of Br atoms generated through photochemical Ts-Br bond homolysis lead to the formation of cyclic dibromide side products, the yields of target bromosulfones in the photochemically induced reactions can be increased by recycling the dibromide byproduct into the target bromosulfones through a sequence of addition/elimination reactions at the exocyclic double bond. Discovery of a relatively efficient radical 5-endo-dig closure, accompanied by a C-C bond formation, provides further support to stereoelectronic considerations at the heart of the Baldwin rules and fills one of the last remaining gaps in the arsenal of radical cyclizations.

The double-edged effects of annealing MgO underlayers on the efficient synthesis of single-wall carbon nanotube forests.

PubMed

Tsuji, Takashi; Hata, Kenji; Futaba, Don N; Sakurai, Shunsuke

2017-11-16

Recently, the millimetre-scale, highly efficient synthesis of single-wall carbon nanotube (SWCNT) forests from Fe catalysts has been reported through the annealing of the magnesia (MgO) underlayer. Here, we report the double-edged effects of underlayer annealing on the efficiency and structure of the SWCNT forest synthesis through a temperature-dependent examination. Our results showed that the efficiency of the SWCNT forests sharply increased with increased underlayer annealing temperatures from 600 °C up to 900 °C due to a temperature-dependent structural modification, characterized by increased grain size and reduced defects, of the MgO underlayer. Beyond this temperature, the SWCNT fraction also decreased as a result of further structural modification of the MgO underlayer. This exemplifies the double-edged effects of annealing. Specifically, for underlayer annealing below 600 °C, the catalyst subsurface diffusion was found to limit the growth efficiency, and for excessively high underlayer annealing temperatures (>900 °C), catalyst coalescence/ripening led to the formation of double-wall carbon nanotubes. As a result, three distinct regions of synthesis were observed: (i) a "low yield" region below a threshold temperature (∼600 °C); (ii) an "increased yield" region from 600 to 900 °C, and (iii) a "saturation" region above 900 °C. The efficient SWCNT forest synthesis could only occur within a specific annealing temperature window as a result of this double-edged effects of underlayer annealing.

A perspective perception on the applications of light-emitting diodes.

PubMed

Nair, Govind B; Dhoble, S J

2015-12-01

Light-emitting diodes (LEDs) continue to penetrate the global market; their pervasiveness clearly being felt in such diverse fields as technological, socio-economic and commercial interests. The multi-billion dollar LED market is shared by various segments, including office and household lighting, street lighting, the automobile industry, traffic signals, backlighting for hand-held devices, indoor and outdoor signs and indicators, medicine, communication systems, crop cultivation using artificial light and many more. The technological development of LEDs has undergone many phases in different parts of the world. From the early discovery of luminescence to the invention of highly efficient organic LEDs, researchers have worked with the prime purpose of improving the performance of luminaires. The need to infuse the market with more efficient and cheaper products has been prevalent from the start. LEDs are a result of this uncontrolled desire of researchers to develop superior products that would displace existing products in the market. To understand what led to the current prominence of LEDs, we give a brief historical overview of the field followed by a thorough discussion of the positive features of LEDs. This work includes the basic requirements, advantages and disadvantages of LEDs in a variety of applications. A brief description of the diverse applications of LED in fields such as lighting, indicators and displays, farming, medicine and communication is given. Considerable importance is placed on discussing the possible difficulties that must be overcome before using LEDs in commercial applications. Copyright © 2015 John Wiley & Sons, Ltd.

On the origin of the photocurrent of electrochemically passivated p-InP(100) photoelectrodes.

PubMed

Goryachev, Andrey; Gao, Lu; van Veldhoven, René P J; Haverkort, Jos E M; Hofmann, Jan P; Hensen, Emiel J M

2018-05-15

III-V semiconductors such as InP are highly efficient light absorbers for photoelectrochemical (PEC) water splitting devices. Yet, their cathodic stability is limited due to photocorrosion and the measured photocurrents do not necessarily originate from H2 evolution only. We evaluated the PEC stability and activation of model p-InP(100) photocathodes upon photoelectrochemical passivation (i.e. repeated surface oxidation/reduction). The electrode was subjected to a sequence of linear potential scans with or without intermittent passivation steps (repeated passivation and continuous reduction, respectively). The evolution of H2 and PH3 gases was monitored by online electrochemical mass spectrometry (OLEMS) and the Faradaic efficiencies of these processes were determined. Repeated passivation led to an increase of the photocurrent in 0.5 M H2SO4, while continuous reduction did not affect the photocurrent of p-InP(100). Neither H2 nor PH3 formation increased to the same extent as the photocurrent during the repeated passivation treatment. Surface analysis of the spent electrodes revealed substantial roughening of the electrode surface by repeated passivation, while continuous reduction left the surface unaltered. On the other hand, photocathodic conditioning performed in 0.5 M HCl led to the expected correlation between photocurrent increase and H2 formation. Ultimately, the H2 evolution rates of the photoelectrodes in H2SO4 and HCl are comparable. The much higher photocurrent in H2SO4 is due to competing side-reactions. The results emphasize the need for a detailed evaluation of the Faradaic efficiencies of all the involved processes using a chemical-specific technique like OLEMS. Photo-OLEMS can be beneficial in the study of photoelectrochemical reactions enabling the instantaneous detection of small amounts of reaction by-products.

High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers.

PubMed

Castelli, Andrea; Meinardi, Francesco; Pasini, Mariacecilia; Galeotti, Francesco; Pinchetti, Valerio; Lorenzon, Monica; Manna, Liberato; Moreels, Iwan; Giovanella, Umberto; Brovelli, Sergio

2015-08-12

Colloidal quantum dots (QDs) are emerging as true candidates for light-emitting diodes with ultrasaturated colors. Here, we combine CdSe/CdS dot-in-rod heterostructures and polar/polyelectrolytic conjugated polymers to demonstrate the first example of fully solution-based quantum dot light-emitting diodes (QD-LEDs) incorporating all-organic injection/transport layers with high brightness, very limited roll-off and external quantum efficiency as high as 6.1%, which is 20 times higher than the record QD-LEDs with all-solution-processed organic interlayers and exceeds by over 200% QD-LEDs embedding vacuum-deposited organic molecules.

Modulation selection for visible light communications using lighting LEDs

NASA Astrophysics Data System (ADS)

Siuzdak, Jerzy

2015-09-01

The paper analyzes suitability of various spectrally efficient modulations (PAM, CAP, OFDM/DMT) in a VLC system using lighting LEDs as a transmitter. Although under ideal conditions all modulation have similar efficiency i.e. they produce similar throughputs with a given BER, their practical performances are different. For example, the level of nonlinear distortions generated by each modulation is the least for PAM and by far the greatest for OFDM/DMT locating CAP in the middle. The suitability of various OFDM/DMT variants in a VLC LED link was also analyzed proving that the asymmetrically clipped (ACO) OFDM has a worse performance as compared with DC biased (DCO) OFDM.

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation

PubMed Central

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Lai, Chao-Sung; Ying, Shang-Ping

2018-01-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts’ material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method. PMID:29494534

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation.

PubMed

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Tan, Cher Ming; Lai, Chao-Sung; Chow, Lee; Ying, Shang-Ping

2018-03-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts' material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

PubMed Central

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-01-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

NASA Astrophysics Data System (ADS)

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-03-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

LED luminaire longevity strategy models comparison

NASA Astrophysics Data System (ADS)

Lemieux, Hugo; Thibault, Simon; Martel, Alain A.

2010-08-01

As energy efficiency becomes more and more important, light-emitting diodes (LEDs) are a promising alternative to traditional lighting. Indeed, the energy efficiency of LEDs is still improving as their luminosity is modulated by current. Moreover, for applications such as exterior lamp posts, their small size, directionality, colors and high frequency response allow to combine them and provide design possibilities which are impossible with any other light source. However, as any lamp, LEDs have a lumen depreciation which is a function of both current and temperature. Thus, to take advantage of the full characteristics of LEDs, LED luminaire longevity strategies must be carefully studied and planned, especially since the IES and CIE guidelines state clearly that the luminaire must maintain the rated recommended light level until the end of the system's operating life. The recommended approach for LED luminaire specification is therefore to use the end-of-life light level when evaluating the luminaire. Different power supply strategies have been simulated to determine which one maximizes energy saving and lifetime. With these results, it appears that active control can save at least 25% in energy, but the best strategy cannot be determined because of uncertainties in luminosity degradation models.

The effects of passive and active learning on student preference and performance in an undergraduate basic science course.

PubMed

Minhas, Paras Singh; Ghosh, Arundhati; Swanzy, Leah

2012-01-01

Active learning is based on self-directed and autonomous teaching methods, whereas passive learning is grounded in instructor taught lectures. An animal physiology course was studied over a two-year period (Year 1, n = 42 students; Year 2, n = 30 students) to determine the effects of student-led seminar (andragogical) and lecture (pedagogical) teaching methods on students' retention of information and performance. For each year of the study, the course was divided into two time periods. The first half was dedicated to instructor-led lectures, followed by a control survey in which the students rated the efficiency of pedagogical learning on a five-point Likert scale from one (strongly disagree) to five (strongly agree). During the second period, students engaged in andragogical learning via peer-led seminars. An experimental survey was then administered to students using the same scale as above to determine students' preferred teaching method. Raw examination scores and survey results from both halves of the course were statistically analyzed by ANOVA with Newman-Keuls multiple comparison test. By the end of the study, student preference for peer-led seminars increased [mean ± SD: (2.47 ± 0.94)/(4.03 ± 1.36), P < 0.04], and examination scores significantly increased [mean ± SD: (73.91% ± 13.18)/(85.77 ± 5.22), P < 0.001]. A majority of students (68.8%) preferred a method that contained peer-led seminars and instructor-led lectures. These results may indicate that integration of active and passive learning into undergraduate courses may have greater benefit in terms of student preference and performance than either method alone. Copyright © 2012 American Association of Anatomists.

Au/ZnS core/shell nanocrystals as an efficient anode photocatalyst in direct methanol fuel cells.

PubMed

Chen, Wei-Ta; Lin, Yin-Kai; Yang, Ting-Ting; Pu, Ying-Chih; Hsu, Yung-Jung

2013-10-04

Au/ZnS core/shell nanocrystals with controllable shell thicknesses were synthesized using a cysteine-assisted hydrothermal method. Incorporating Au/ZnS nanocrystals into the traditional Pt-catalyzed half-cell reaction led to a 43.3% increase in methanol oxidation current under light illumination, demonstrating their promising potential for metal/semiconductor hybrid nanocrystals as the anode photocatalyst in direct methanol fuel cells.

A hole modulator for InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei

2015-02-09

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall holemore » concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332 meV to ∼294 meV at 80 A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.« less

Nurse-led treatment for occipital neuralgia.

PubMed

Pike, Denise; Amphlett, Alexander; Weatherby, Stuart

Occipital neuralgia is a headache resulting from dysfunction of the occipital nerves. Medically resistant occipital neuralgia is treated by greater occipital nerve injection, which is traditionally performed by neurologists. A nurse-led clinic was developed to try to improve the service. Patient feedback showed that the clinic was positively perceived by patients, with most stating the nurse-led model was more efficient than the previous one, which had been led by consultants.

Increased glycosylation efficiency of recombinant proteins in Escherichia coli by auto-induction.

PubMed

Ding, Ning; Yang, Chunguang; Sun, Shenxia; Han, Lichi; Ruan, Yao; Guo, Longhua; Hu, Xuejun; Zhang, Jianing

2017-03-25

Escherichia coli cells have been considered as promising hosts for producing N-glycosylated proteins since the successful production of N-glycosylated protein in E. coli with the pgl (N-linked protein glycosylation) locus from Campylobacter jejuni. However, one hurdle in producing N-glycosylated proteins in large scale using E. coli is inefficient glycan glycosylation. In this study, we developed a strategy for the production of N-glycosylated proteins with high efficiency via an optimized auto-induction method. The 10th human fibronectin type III domain (FN3) was engineered with native glycosylation sequon DFNRSK and optimized DQNAT sequon in C-terminus with flexible linker as acceptor protein models. The resulting glycosylation efficiencies were confirmed by Western blots with anti-FLAG M1 antibody. Increased efficiency of glycosylation was obtained by changing the conventional IPTG induction to auto-induction method, which increased the glycosylation efficiencies from 60% and 75% up to 90% and 100% respectively. Moreover, in the condition of inserting the glycosylation sequon in the loop of FN3 (the acceptor sequon with local structural conformation), the glycosylation efficiency was increased from 35% to 80% by our optimized auto-induction procedures. To justify the potential for general application of the optimized auto-induction method, the reconstituted lsg locus from Haemophilus influenzae and PglB from C. jejuni were utilized, and this led to 100% glycosylation efficiency. Our studies provided quantitative evidence that the optimized auto-induction method will facilitate the large-scale production of pure exogenous N-glycosylation proteins in E. coli cells. Copyright © 2017 Elsevier Inc. All rights reserved.

Resource Allocation Strategies to Increase the Efficiency and Sustainability of Gavi's Health System Strengthening Grants.

PubMed

Mimche, Honoré; Squires, Ellen; Miangotar, Yodé; Mokdad, Ali; El Bcheraoui, Charbel

2018-05-01

Despite the increase in Health System Strengthening (HSS) grants, there is no consensus among global health actors about how to maximize the efficiency and sustainability of HSS programs and their resulting gains. To formally analyze and compare the efficiency and sustainability of Gavi's HSS grants, we investigated the factors, events and root causes that increased the time and effort needed to implement HSS grants, decreased expected outcomes and threatened the continuity of activities and the sustainability of the results gained through these grants in Cameron and Chad. We conducted 2 retrospective independent evaluations of Gavi's HSS support in Cameroon and Chad using a mixed methodology. We investigated the chain of events and situations that increased the effort and time required to implement the HSS programs, decreased the value of the funds spent and hindered the sustainability of the implemented activities and gains achieved. Root causes affecting the efficiency and sustainability of HSS grants were common to Cameroon and Chad. Weaknesses in health workforce and leadership/governance of the health system in both countries led to interrupting the HSS grants, reprogramming them, almost doubling their implementation period, shifting their focus during implementation toward procurements and service provision, leaving both countries without solid exit plans to maintain the results gained. To increase the efficiency and sustainability of Gavi's HSS grants, recipient countries need to consider health workforce and leadership/governance prior, or in parallel to strengthening other building blocks of their health systems.

"Light-box" accelerated growth of poinsettias: LED-only illumination

NASA Astrophysics Data System (ADS)

Weerasuriya, Charitha; Detez, Stewart; Hock Ng, Soon; Hughes, Andrew; Callaway, Michael; Harrison, Iain; Katkus, Tomas; Juodkazis, Saulius

2018-01-01

For the current commercialized agricultural industry which requires a reduced product lead time to customer and supply all year round, an artificial light emitting diodes (LEDs)-based illumination has high potential due to high efficiency of electrical-to-light conversion. The main advantage of the deployed Red Green Blue Amber LED lighting system is colour mixing capability, which means ability to generate all the colours in the spectrum by using three or four primary colours LEDs. The accelerated plant growth was carried out in a "light-box" which was made to generate an artificial day/night cycle by moving the colour mixing ratio along the colour temperature curve of the chromaticity diagram. The control group of plants form the same initial batch was grown on the same shelf in a greenhouse at the same conditions with addition of artificial illumination by incandescent lamps for few hours. Costs and efficiency projections of LED lamps for horticultural applications is discussed together with required capital investment. The total cost of the "light-box" including LED lamps and electronics was 850 AUD.

CALiPER Report 21.2. Linear (T8) LED Lamp Performance in Five Types of Recessed Troffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2014-05-01

Although lensed troffers are numerous, there are many other types of optical systems as well. This report looks at the performance of three linear (T8) LED lamps—chosen primarily based on their luminous intensity distributions (narrow, medium, and wide beam angles)—as well as a benchmark fluorescent lamp in five different troffer types. Also included are the results of a subjective evaluation. Results show that linear (T8) LED lamps can improve luminaire efficiency in K12-lensed and parabolic-louvered troffers, effect little change in volumetric and high-performance diffuse-lensed type luminaires, but reduce efficiency in recessed indirect troffers. These changes can be accompanied by visualmore » appearance and visual comfort consequences, especially when LED lamps with clear lenses and narrow distributions are installed. Linear (T8) LED lamps with diffuse apertures exhibited wider beam angles, performed more similarly to fluorescent lamps, and received better ratings from observers. Guidance is provided on which luminaires are the best candidates for retrofitting with linear (T8) LED lamps.« less

DOE CALiPER Program, Report 21.2: Linear (T8) LED Lamp Performance in Five Types of Recessed Troffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Naomi J.; Perrin, Tess E.; Royer, Michael P.

2014-05-20

Although lensed troffers are numerous, there are many other types of optical systems as well. This report looked at the performance of three linear (T8) LED lamps chosen primarily based on their luminous intensity distributions (narrow, medium, and wide beam angles) as well as a benchmark fluorescent lamp in five different troffer types. Also included are the results of a subjective evaluation. Results show that linear (T8) LED lamps can improve luminaire efficiency in K12-lensed and parabolic-louvered troffers, effect little change in volumetric and high-performance diffuse-lensed type luminaires, but reduce efficiency in recessed indirect troffers. These changes can be accompaniedmore » by visual appearance and visual comfort consequences, especially when LED lamps with clear lenses and narrow distributions are installed. Linear (T8) LED lamps with diffuse apertures exhibited wider beam angles, performed more similarly to fluorescent lamps, and received better ratings from observers. Guidance is provided on which luminaires are the best candidates for retrofitting with linear (T8) LED lamps.« less

High-efficiency, radiation-resistant GaAs space cells

NASA Technical Reports Server (NTRS)

Bertness, K. A.; Ristow, M. Ladle; Grounner, M.; Kuryla, M. S.; Werthen, J. G.

1991-01-01

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.

Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements

NASA Astrophysics Data System (ADS)

Quitsch, Wolf-Alexander; Sager, Daniel; Loewenich, Moritz; Meyer, Tobias; Hahn, Berthold; Bacher, Gerd

2018-06-01

Time-resolved photoluminescence spectroscopy and photocurrent measurements at quasi-resonant laser excitation are combined with electroluminescence studies to get access to low injection losses in high power InGaN/GaN LEDs. A direct relation between electroluminescence and photoluminescence efficiencies with photocurrent is found, indicating that tunneling losses play a key role in the low injection regime. This assertion is confirmed by comparing photoluminescence efficiencies under open and closed circuit conditions. Experiments under various excitation wavelengths hint at the role of resonant tunneling processes in the efficiency losses.

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

Strained layer relaxation effect on current crowding and efficiency improvement of GaN based LED

NASA Astrophysics Data System (ADS)

Aurongzeb, Deeder

2012-02-01

Efficiency droop effect of GaN based LED at high power and high temperature is addressed by several groups based on career delocalization and photon recycling effect(radiative recombination). We extend the previous droop models to optical loss parameters. We correlate stained layer relaxation at high temperature and high current density to carrier delocalization. We propose a third order model and show that Shockley-Hall-Read and Auger recombination effect is not enough to account for the efficiency loss. Several strained layer modification scheme is proposed based on the model.

Clinical and Spectrophotometric Evaluation of LED and Laser Activated Teeth Bleaching.

PubMed

Lo Giudice, R; Pantaleo, G; Lizio, A; Romeo, U; Castiello, G; Spagnuolo, G; Giudice, G Lo

2016-01-01

Auxiliary power sources (LED and laser) are used in in-office teeth bleaching techniques to accelerate the redox reaction of the whitening gel to increase ease of use, to improve comfort and safety, and to decrease the procedure time. The aim this study is to evaluate the efficiency of the teeth whitening procedures performed with hydrogen peroxide and carbamide peroxide, LED or Laser activated. 18 patients, affected by exogenous dyschromia, were treated with a bleaching agent composed by 35% hydrogen peroxide and 10% carbamide peroxide. They were divided into two groups: in the first group the bleaching agent was activated by a LED lamp; in the second group it was activated by a Laser diode lamp. Both groups were subjected to 3 bleaching cycle of 15' each. The chromatic evaluations were performed before and after one week from the treatment, using a chromatic scale and a spectrophotometer. The mean value of pre, post bleaching and follow-up were analyzed using a T-test, with results statistically significant for P<0,05. Results showed that the variations in brightness, chroma and hue are significantly influenced by the interaction between the whitening agent and the original colour of the teeth. Laser-activation has marginally improved the bleaching effectiveness. All patients treated with laser activation complained an increase in dental sensitivity. The use of laser-activating systems did not improve the efficacy of bleaching.

The need for strategic tax planning among nonprofit hospitals.

PubMed

Smith, Pamela C

2005-01-01

Strategic tax planning issues are important to the nonprofit health care sector, despite its philanthropic mission. The consolidation of the industry has led management to fight for resources and develop alternative strategies for raising money. When management evaluates alternative collaborative structures to increase efficiency, the impact on governance structures must also be considered. The increased governmental scrutiny of joint ventures within the health care sector warrants management's attention as well. The financial incentives must be considered, along with the various tax policy implications of cross-sector collaborations.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

2016-09-01

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

Effect of green light spectra on the reduction of retinal damage and stress in goldfish, Carassius auratus.

PubMed

Song, Jin Ah; Kim, Na Na; Choi, Young Jae; Choi, Cheol Young

2016-07-22

We investigated the effect of light spectra on retinal damage and stress in goldfish using green (530 nm) and red (620 nm) light emitting diodes (LEDs) at three intensities each (0.5, 1.0, and 1.5 W/m(2)). We measured the change in the levels of plasma cortisol and H2O2 and expression and levels of caspase-3. The apoptotic response of green and red LED spectra was assessed using the terminal transferase dUTP nick end labeling (TUNEL) assay. Stress indicator (cortisol and H2O2) and apoptosis-related genes (caspase-3) decreased in green light, but increased in red light with higher light intensities over time. The TUNEL assay revealed that more apoptotic cells were detected in outer nuclear layers after exposure to red LED over time with the increase in light intensity, than the other spectra. These results indicate that green light efficiently reduces retinal damage and stress, whereas red light induces it. Therefore, red light-induced retina damage may induce apoptosis in goldfish retina. Copyright © 2016 Elsevier Inc. All rights reserved.

Assessment of end-of-life design in solid-state lighting

NASA Astrophysics Data System (ADS)

Dzombak, Rachel; Padon, Jack; Salsbury, Josh; Dillon, Heather

2017-08-01

Consumers in the US market and across the globe are beginning to widely adopt light emitting diode (LED) lighting products while the technology continues to undergo significant changes. While LED products are evolving to consume less energy, they are also more complex than traditional lighting products with a higher number of parts and a larger number of electronic components. Enthusiasm around the efficiency and long expected life span of LED lighting products is valid, but research to optimize product characteristics and design is needed. This study seeks to address that gap by characterizing LED lighting products' suitability for end of life (EOL) recycling and disposal. The authors disassembled and assessed 17 different lighting products to understand how designs differ between brands and manufacture year. Products were evaluated based on six parameters to quantify the design. The analysis indicates that while the efficiency of LED products has improved dramatically in the recent past, product designers and manufacturers could incorporate design strategies to improve environmental performance of lighting products at end-of-life.

Experimental Study on Active Cooling Systems Used for Thermal Management of High-Power Multichip Light-Emitting Diodes

PubMed Central

2014-01-01

The objective of this study was to develop suitable cooling systems for high-power multichip LEDs. To this end, three different active cooling systems were investigated to control the heat generated by the powering of high-power multichip LEDs in two different configurations (30 and 2 × 15 W). The following cooling systems were used in the study: an integrated multi-fin heat sink design with a fan, a cooling system with a thermoelectric cooler (TEC), and a heat pipe cooling device. According to the results, all three systems were observed to be sufficient for cooling high-power LEDs. Furthermore, it was observed that the integrated multifin heat sink design with a fan was the most efficient cooling system for a 30 W high-power multichip LED. The cooling system with a TEC and 46 W input power was the most efficient cooling system for 2 × 15 W high-power multichip LEDs. PMID:25162058

Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer

NASA Astrophysics Data System (ADS)

Shim, Jae-Phil; Seong, Won-Seok; Min, Jung-Hong; Kong, Duk-Jo; Seo, Dong-Ju; Kim, Hyung-jun; Lee, Dong-Seon

2016-11-01

We introduce ITO on graphene as a current-spreading layer for separated InGaN/GaN nanorod LEDs for the purpose of passivation-free and high light-extraction efficiency. Transferred graphene on InGaN/GaN nanorods effectively blocks the diffusion of ITO atoms to nanorods, facilitating the production of transparent ITO/graphene contact on parallel-nanorod LEDs, without filling the air gaps, like a bridge structure. The ITO/graphene layer sufficiently spreads current in a lateral direction, resulting in uniform and reliable light emission observed from the whole area of the top surface. Using KOH treatment, we reduce series resistance and reverse leakage current in nanorod LEDs by recovering the plasma-damaged region. We also control the size of the nanorods by varying the KOH treatment time and observe strain relaxation via blueshift in electroluminescence. As a result, bridge-structured LEDs with 8 min of KOH treatment show 15 times higher light-emitting efficiency than with 2 min of KOH treatment.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lall, Pradeep; Zhang, Hao; Davis, J Lynn

The energy efficiency of light-emitting diode (LED) technology compared to incandescent light bulbs has triggered an increased focus on solid state luminaries for a variety of lighting applications. Solid-state lighting (SSL) utilizes LEDs, for illumination through the process of electroluminescence instead of heating a wire filament as seen with traditional lighting. The fundamental differences in the construction of LED and the incandescent lamp results in different failure modes including lumen degradation, chromaticity shift and drift in the correlated color temperature. The use of LED-based products for safety-critical and harsh environment applications necessitates the characterization of the failure mechanisms and modes.more » In this paper, failure mechanisms and color stability has been studied for commercially available vertical structured thin film LED (VLED) under harsh environment conditions with and without the presence of contaminants. The VLED used for the study was mounted on a ceramic starboard in order to connect it to the current source. Contamination sources studied include operation in the vicinity of vulcanized rubber and adhesive epoxies in the presence of temperature and humidity. Performance of the VLEDs has been quantified using the measured luminous flux and color shift of the VLEDs subjected to both thermal and humidity stresses under a forward current bias of 350 mA. Results indicate that contamination can result in pre-mature luminous flux degradation and color shift in LEDs.« less

Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern

NASA Astrophysics Data System (ADS)

Han, Nam; Jung, Eunjin; Han, Min; Deul Ryu, Beo; Bok Ko, Kang; Park, Young Jae; Cuong, TranViet; Cho, Jaehee; Kim, Hyunsoo; Hong, Chang-Hee

2015-07-01

Thermal management has become a crucial area for further development of high-power light-emitting didoes (LEDs) due to the high operating current densities that are required and result in additional joule heating. This increased joule heating negatively affects the performance of the LEDs since it greatly decreases both the optical performance and the lifetime. To circumvent this problem, a reduced graphene oxide (rGO) layer can be inserted to act as a heat spreader. In this study, current-voltage and light-output-current measurements are systematically performed at different temperatures from 30 to 190 °C to investigate the effect that the embedded rGO pattern has on the device performance. At a high temperature and high operating current, the junction temperature (Tj) is 23% lower and the external quantum efficiency (EQE) is 24% higher for the rGO embedded LEDs relative to those of conventional LEDs. In addition, the thermal activation energy of the rGO embedded LEDs exhibits a 30% enhancement as a function of the temperature at a bias of  -5 V. This indicates that the rGO pattern plays an essential role in decreasing the junction temperature and results in a favorable performance in terms of the temperature of the high power GaN-based LED junction.

Influencing of various phosphor parameters on the LED performance

NASA Astrophysics Data System (ADS)

Wu, Yi Ping; Zhang, Shu Qin; Jin, Shang-zhong; Shi, Chang Shou; Li, Liang; Yu, RenYong

2012-10-01

In this paper ,the advantages and disadvantages of the methods to achieve White LED are reviewed, and phosphor-converted white LEDs are discussed in detail. In the case of blue chip exciting YAG phosphor to get white LED, use Mie scattering theory to construct physical model, then analyze how the package, concentration, thickness and particle size of phosphor work on extraction efficiency, spatial Chroma uniformity and color temperature of white LED. The conclusion of this paper advances the application of LED solid-state light source. In the end, the paper puts forward the direction and focus of phosphor research.

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

NASA Astrophysics Data System (ADS)

Tian, Chao; Wang, Weibiao; Liang, Jingqiu; Liang, Zhongzhu; Qin, Yuxin; Lv, Jinguang

2015-04-01

An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit, and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42-1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2-2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here.

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Chao; University of Chinese Academy of Sciences, Beijing 100049; Wang, Weibiao, E-mail: wangwbcn@163.com

An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit,more » and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42–1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2–2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here.« less

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bochkareva, N. I.; Sheremet, I. A.; Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru

2016-10-15

Point defects in GaN and, in particular, their manifestation in the photoluminescence, optical absorption, and recombination current in light-emitting diodes with InGaN/GaN quantum wells are analyzed. The results of this analysis demonstrate that the wide tail of defect states in the band gap of GaN facilitates the trap-assisted tunneling of thermally activated carriers into the quantum well, but simultaneously leads to a decrease in the nonradiative-recombination lifetime and to an efficiency droop as the quasi-Fermi levels intersect the defect states with increasing forward bias. The results reveal the dominant role of hydrogen in the recombination activity of defects with danglingmore » bonds and in the efficiency of GaN-based devices.« less

Efficient high-throughput biological process characterization: Definitive screening design with the ambr250 bioreactor system.

PubMed

Tai, Mitchell; Ly, Amanda; Leung, Inne; Nayar, Gautam

2015-01-01

The burgeoning pipeline for new biologic drugs has increased the need for high-throughput process characterization to efficiently use process development resources. Breakthroughs in highly automated and parallelized upstream process development have led to technologies such as the 250-mL automated mini bioreactor (ambr250™) system. Furthermore, developments in modern design of experiments (DoE) have promoted the use of definitive screening design (DSD) as an efficient method to combine factor screening and characterization. Here we utilize the 24-bioreactor ambr250™ system with 10-factor DSD to demonstrate a systematic experimental workflow to efficiently characterize an Escherichia coli (E. coli) fermentation process for recombinant protein production. The generated process model is further validated by laboratory-scale experiments and shows how the strategy is useful for quality by design (QbD) approaches to control strategies for late-stage characterization. © 2015 American Institute of Chemical Engineers.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

NASA Astrophysics Data System (ADS)

Latzel, M.; Büttner, P.; Sarau, G.; Höflich, K.; Heilmann, M.; Chen, W.; Wen, X.; Conibeer, G.; Christiansen, S. H.

2017-02-01

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device’s active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 {nm} alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments—chemical etching and alumina deposition—reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

PubMed

Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

2017-02-03

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Coencapsulation of (-)-Epigallocatechin-3-gallate and Quercetin in Particle-Stabilized W/O/W Emulsion Gels: Controlled Release and Bioaccessibility.

PubMed

Chen, Xing; McClements, David Julian; Wang, Jian; Zou, Liqiang; Deng, Sumeng; Liu, Wei; Yan, Chi; Zhu, Yuqing; Cheng, Ce; Liu, Chengmei

2018-04-11

Particle-stabilized W 1 /O/W 2 emulsion gels were fabricated using a two-step procedure: ( i) a W 1 /O emulsion was formed containing saccharose (for osmotic stress balance) and gelatin (as a gelling agent) in the aqueous phase and polyglycerol polyricinoleate (a lipophilic surfactant) in the oil phase; ( ii) this W 1 /O emulsion was then homogenized with another water phase (W 2 ) containing wheat gliadin nanoparticles (hydrophilic emulsifier). The gliadin nanoparticles in the external aqueous phase aggregated at pH 5.5, which led to the formation of particle-stabilized W 1 /O/W 2 emulsion gels with good stability to phase separation. These emulsion gels were then used to coencapsulate a hydrophilic bioactive (epigallocatechin-3-gallate, EGCG) in the internal aqueous phase (encapsulation efficiency = 65.5%) and a hydrophobic bioactive (quercetin) in the oil phase (encapsulation efficiency = 97.2%). The emulsion gels improved EGCG chemical stability and quercetin solubility under simulated gastrointestinal conditions, which led to a 2- and 4-fold increase in their effective bioaccessibility, respectively.

Powerful peracetic acid-ionic liquid pretreatment process for the efficient chemical hydrolysis of lignocellulosic biomass.

PubMed

Uju; Goto, Masahiro; Kamiya, Noriho

2016-08-01

The aim of this work was to design a new method for the efficient saccharification of lignocellulosic biomass (LB) using a combination of peracetic acid (PAA) pretreatment with ionic liquid (IL)-HCl hydrolysis. The pretreatment of LBs with PAA disrupted the lignin fractions, enhanced the dissolution of LB and led to a significant increase in the initial rate of the IL-HCl hydrolysis. The pretreatment of Bagasse with PAA prior to its 1-buthyl-3-methylimidazolium chloride ([Bmim][Cl])-HCl hydrolysis, led to an improvement in the cellulose conversion from 20% to 70% in 1.5h. Interestingly, the 1-buthyl-3-methylpyridium chloride ([Bmpy][Cl])-HCl hydrolysis of Bagasse gave a cellulose conversion greater than 80%, with or without the PAA pretreatment. For LB derived from seaweed waste, the cellulose conversion reached 98% in 1h. The strong hydrolysis power of [Bmpy][Cl] was attributed to its ability to transform cellulose I to II, and lowering the degree of polymerization of cellulose. Copyright © 2016 Elsevier Ltd. All rights reserved.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi

2014-02-15

Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, themore » external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.« less

Computational strategies for three-dimensional flow simulations on distributed computer systems. Ph.D. Thesis Semiannual Status Report, 15 Aug. 1993 - 15 Feb. 1994

NASA Technical Reports Server (NTRS)

Weed, Richard Allen; Sankar, L. N.

1994-01-01

An increasing amount of research activity in computational fluid dynamics has been devoted to the development of efficient algorithms for parallel computing systems. The increasing performance to price ratio of engineering workstations has led to research to development procedures for implementing a parallel computing system composed of distributed workstations. This thesis proposal outlines an ongoing research program to develop efficient strategies for performing three-dimensional flow analysis on distributed computing systems. The PVM parallel programming interface was used to modify an existing three-dimensional flow solver, the TEAM code developed by Lockheed for the Air Force, to function as a parallel flow solver on clusters of workstations. Steady flow solutions were generated for three different wing and body geometries to validate the code and evaluate code performance. The proposed research will extend the parallel code development to determine the most efficient strategies for unsteady flow simulations.

Room-temperature synthesis of zinc oxide nanoparticles in different media and their application in cyanide photodegradation

PubMed Central

2013-01-01

Cyanide is an extreme hazard and extensively found in the wastes of refinery, coke plant, and metal plating industries. A simple, fast, cost-effective, room-temperature wet chemical route, based on cyclohexylamine, for synthesizing zinc oxide nanoparticles in aqueous and enthanolic media was established and tested for the photodegradation of cyanide ions. Particles of polyhedra morphology were obtained for zinc oxide, prepared in ethanol (ZnOE), while spherical and some chunky particles were observed for zinc oxide, prepared in water (ZnOW). The morphology was crucial in enhancing the cyanide ion photocatalytic degradation efficiency of ZnOE by a factor of 1.5 in comparison to the efficiency of ZnOW at an equivalent concentration of 0.02 wt.% ZnO. Increasing the concentration wt.% of ZnOE from 0.01 to 0.09 led to an increase in the photocatalytic degradation efficiency from 85% to almost 100% after 180 min and a doubling of the first-order rate constant (k). PMID:24314056

Lignin: A sustainable biosorbent for heavy metal adsorption from wastewater, a review

NASA Astrophysics Data System (ADS)

Nasrullah, Asma; Bhat, A. H.; Isa, Mohamed Hasnain

2016-11-01

With the recent advancements in science and technology, environmental pollution is a challenging problem due to increased activities in domestic, industrial, and agricultural sector. These activities have led to the release of various types of micropollutants such as heavy metal ions, organic and inorganic ions (detergents, and dye) etc into ground water which badly affects the ecosystem. Among various types of pollutants, heavy metals are the most reported in the recent decade. Water pollution is the most challenging problem, and needs to be controlled for better and healthy ecosystem which requires a healthy, eco-friendly and cheaper technology. In this context. lignin is abundantly available, cheaper and environmentally friendly. For efficient removal of heavy metals, lignin can be modified chemically or thermally to increased its biosorption capacity. In this review merits of adsorption and demerits of other separation technologies are compared. This paper presents the recent state of research on the efficient utilization of lignin, its modification and its adsorption efficiency for heavy metal removal from wastewater.

Advances in light-curing units: four generations of LED lights and clinical implications for optimizing their use: Part 2. From present to future.

PubMed

Shortall, Adrian C; Palin, Will M; Jacquot, Bruno; Pelissier, Bruno

2012-01-01

The first part of this series of two described the history of light curing in dentistry and developments in LED lights since their introduction over 20 years ago. Current second- and third-generation LED light units have progressively replaced their halogen lamp predecessors because of their inherent advantages. The background to this, together with the clinical issues relating to light curing and the possible solutions, are outlined in the second part of this article. Finally, the innovative features of what may be seen as the first of a new fourth-generation of LED lights are described and guidance is given for the practitioner on what factors to consider when seeking to purchase a new LED light activation unit. Adequate curing in depth is fundamental to clinical success with any light-activated restoration. To achieve this goal predictably, an appropriate light source needs to be combined with materials knowledge, requisite clinical skills and attention to detail throughout the entire restoration process. As dentists increasingly use light-cured direct composites to restore large posterior restorations they need to appreciate the issues central to effective and efficient light curing and to know what to look for when seeking to purchase a new light-curing unit.

Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications

NASA Astrophysics Data System (ADS)

Hirano, Akira; Nagasawa, Yosuke; Ippommatsu, Masamichi; Aosaki, Ko; Honda, Yoshio; Amano, Hiroshi; Akasaki, Isamu

2016-09-01

AlGaN-based LEDs are expected to be useful for sterilization, deodorization, photochemical applications such as UV curing and UV printing, medical applications such as phototherapy, and sensing. Today, it has become clear that efficient AlGaN-based LED dies are producible between 355 and 250 nm with an external quantum efficiency (EQE) of 3% on flat sapphire. These dies were realized on flat sapphire without using a special technique, i.e., reduction in threading dislocation density or light extraction enhancement techniques such as the use of a photonic crystal or a patterned sapphire substrate. Despite the limited light extraction efficiency of about 8% owing to light absorption at a thick p-GaN contact layer, high EQEs of approximately 6% has been reproducible between 300 and 280 nm without using special techniques. Moreover, an EQE of 3.9% has been shown at 271 nm, despite the smaller current injection efficiency (CIE). The high EQEs are thought to correspond to the high internal quantum efficiency (IQE), indicating a small room for improving IQE. Accordingly, resin encapsulation on a simple submount is strongly desired. Recently, we have succeeded in demonstrating fluorine resin encapsulation on a ceramic sheet (chip-on-board, COB) that is massproducible. Furthermore, the molecular structure of a resin with a durability of more than 10,000 h is explained in this paper from the photochemical viewpoint. Thus, the key technologies of AlGaN-based DUV-LEDs having an EQE of 10% within a reasonable production cost have been established. The achieved efficiency makes AlGaN-based DUVLEDs comparable to high-pressure mercury lamps.

Contact formation and patterning approaches for group-III nitride light emitters

NASA Astrophysics Data System (ADS)

Hou, Wenting

Solid state lighting via light emitting diodes (LEDs) and laser diodes (LDs) is a rapidly progressing technology with the potential to greatly exceed the efficiency of traditional lighting systems. This dissertation focuses on the development of electrical contacts and patterning schemes for highly efficient green LEDs and LD structures. Efficiency of LEDs can be greatly improved by means of nano-patterning processes. LEDs grown on nano-imprint patterned sapphire substrates showed promising performance, with improvement in both internal quantum efficiency and light extraction efficiency. As an alternative to nano-imprint lithography, this study utilized a simple method to generate irregular nano-patterns by a Ni self-assembly process and applied the process to both sapphire substrate and n-GaN template. In both approaches, the nano-patterned LEDs showed an improvement in light output power. For the device fabrication of LEDs and LDs, low-resistance ohmic contacts are essential for high efficiency. In search of a highly transparent ohmic contact to p-type GaN, I analyzed various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compared them with Ni/Au, NiZn/Ag, and ITO contacts. For ITO-based contacts, the inserted metal layer can boost conductivity while the ITO thickness can be optimized for constructive transmission interference on GaN exceeding the extraction from bare GaN. The best compromise was obtained for an Ag/ITO (3 nm /67 nm) ohmic contact, with a relative transmittance of 97% of the bare GaN near 530 nm, and a specific contact resistance of 3x10-2 O·cm 2. The contact proved particularly suitable for green light emitting diodes in epi-up geometry. Graphene as another alternative transparent p-contact was also evaluated. Furthermore, this dissertation offered a pre-deposition treatment to contact schemes on undoped and n-doped GaN, rendering a standard post-deposition annealing step unnecessary. As-deposited Ti/Al/Ti/Au usually forms a Schottky contact. By means of oxygen rapid thermal annealing prior to the metal deposition, the contact developed an ohmic behavior with a specific contact resistance of 3.8x10-5 O cm2. X-ray photoelectron spectroscopy characterization showed that the Ga 3d electron binding energy increased with the pre-treatment, indicating a shift of the Fermi level closer to the conduction band edge. This explained the improvement in contact performance. While low contact resistance to GaN-based devices has been achieved to p-type and n-type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process in bipolar devices. This dissertation presents a solution to the problem by the pre-deposition oxygen thermal treatment on n-GaN. By utilizing this process, an important gain in device fabrication flexibility was realized. LEDs with the integrated process for both n- and p-contacts showed lower series resistance and lower voltage drop compared to those with separately optimized contacts. In addition to the fabrication of LEDs, the development of green LDs was studied. To extend the emission wavelength of AlGaInN-based LDs to a 500 nm green spectral region, both highly efficient active layers and suitable optical confinement are critical. This work presents the development progress by first identifying active regions that show stimulated emission at 450 nm under optical excitation. Then such layers were embedded in an etched cavity. Under electrical injection, the same transition appeared as a short-wavelength shoulder of a broader band. By using a silver mirror on the p-side, an enhanced optical confinement was obtained, and the 450 nm emission showed an even better dominance over the long-wavelength contribution. As an alternative, an optical confinement was implemented by applying AlGaN cladding layers in ridge wave-guided structures. A superior optical confinement was achieved in an epitaxial ridge re-growth approach. Under pulsed electrical injection, narrow-peak emission in the 510--520 nm range was achieved, rendering the approach suitable for the further development of blue and green laser diodes.

Assessing future reactive nitrogen inputs into global croplands based on the shared socioeconomic pathways

NASA Astrophysics Data System (ADS)

Mogollón, J. M.; Lassaletta, L.; Beusen, A. H. W.; van Grinsven, H. J. M.; Westhoek, H.; Bouwman, A. F.

2018-04-01

Reactive nitrogen (N) inputs in agriculture strongly outpace the outputs at the global scale due to inefficiencies in cropland N use. While improvement in agricultural practices and environmental legislation in developed regions such as Western Europe have led to a remarkable increase in the N use efficiency since 1985, this lower requirement for reactive N inputs via synthetic fertilizers has yet to occur in many developing and transition regions. Here, we explore future N input requirements and N use efficiency in agriculture for the five shared socioeconomic pathways. Results show that under the most optimistic sustainability scenario, the global synthetic fertilizer use in croplands stabilizes and even shrinks (85 Tg N yr‑1 in 2050) regardless of the increase in crop production required to feed the larger estimated population. This scenario is highly dependent on projected increases in N use efficiency, particularly in South and East Asia. In our most pessimistic scenario, synthetic fertilization application rates are expected to increase almost threefold by 2050 (260 Tg N yr‑1). Excepting the sustainability scenario, all other projected scenarios reveal that the areal N surpluses will exceed acceptable limits in most of the developing regions.

Difference in leaf water use efficiency/photosynthetic nitrogen use efficiency of Bt-cotton and its conventional peer.

PubMed

Guo, Ruqing; Sun, Shucun; Liu, Biao

2016-09-15

This study is to test the effects of Bt gene introduction on the foliar water/nitrogen use efficiency in cotton. We measured leaf stomatal conductance, photosynthetic rate, and transpiration rate under light saturation condition at different stages of a conventional cultivar (zhongmian no. 16) and its counterpart Bt cultivar (zhongmian no. 30) that were cultured on three levels of fertilization, based on which leaf instantaneous water use efficiency was derived. Leaf nitrogen concentration was measured to calculate leaf photosynthetic nitrogen use efficiency, and leaf δ(13)C was used to characterize long term water use efficiency. Bt cultivar was found to have lower stomatal conductance, net photosynthetic rates and transpiration rates, but higher instantaneous and long time water use efficiency. In addition, foliar nitrogen concentration was found to be higher but net photosynthetic rate was lower in the mature leaves of Bt cultivar, which led to lower photosynthetic nitrogen use efficiency. This might result from the significant decrease of photosynthetic rate due to the decrease of stomatal conductance. In conclusion, our findings show that the introduction of Bt gene should significantly increase foliar water use efficiency but decrease leaf nitrogen use efficiency in cotton under no selective pressure.

International Trade Drives Global Resource Use: A Structural Decomposition Analysis of Raw Material Consumption from 1990-2010.

PubMed

Plank, Barbara; Eisenmenger, Nina; Schaffartzik, Anke; Wiedenhofer, Dominik

2018-04-03

Globalization led to an immense increase of international trade and the emergence of complex global value chains. At the same time, global resource use and pressures on the environment are increasing steadily. With these two processes in parallel, the question arises whether trade contributes positively to resource efficiency, or to the contrary is further driving resource use? In this article, the socioeconomic driving forces of increasing global raw material consumption (RMC) are investigated to assess the role of changing trade relations, extended supply chains and increasing consumption. We apply a structural decomposition analysis of changes in RMC from 1990 to 2010, utilizing the Eora multi-regional input-output (MRIO) model. We find that changes in international trade patterns significantly contributed to an increase of global RMC. Wealthy developed countries play a major role in driving global RMC growth through changes in their trade structures, as they shifted production processes increasingly to less material-efficient input suppliers. Even the dramatic increase in material consumption in the emerging economies has not diminished the role of industrialized countries as drivers of global RMC growth.

Controlling potential barrier height by changing V-shaped pit size and the effect on optical and electrical properties for InGaN/GaN based light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okada, Narihito, E-mail: nokada@yamaguchi-u.ac.jp; Kashihara, Hiroyuki; Sugimoto, Kohei

2015-01-14

The internal quantum efficiency (IQE) of InGaN/GaN multiple quantum wells (MQWs) with blue light emission was improved by inserting an InGaN/GaN superlattice (SL) beneath the MQWs. While the SL technique is useful for improving the light-emitting diode (LED) performance, its effectiveness from a multilateral point of view requires investigation. V-shaped pits (V-pits), which generate a potential barrier and screen the effect of the threading dislocation, are one of the candidates for increasing the light emission efficiency of LEDs exceptionally. In this research, we investigated the relationship between the V-pit and SL and revealed that the V-pit diameter is strongly correlatedmore » with the IQE by changing the number of SL periods. Using scanning near-field optical microscopy and photoluminescence measurements, we demonstrated the distinct presence of the potential barrier formed by the V-pits around the dislocations. The relationship between the V-pit and the number of SL periods resulted in changing the potential barrier height, which is related to the V-pit diameter determined by the number of SL periods. In addition, we made an attempt to insert pit expansion layers (PELs) composed of combination of SL and middle temperature grown GaN layer instead of only SL structure. As a result of the evaluation of LEDs using SL or PEL, the EL intensity was strongly related to pit diameter regardless of the structures to form the V-pits. In addition, it was clear that larger V-pits reduce the efficiency droop, which is considered to be suppression of the carrier loss at high injection current.« less

Enhancing nurses' roles to improve quality and efficiency of non-medical cardiac stress tests.

PubMed

Bernhardt, Lizelle; Ross, Lisa; Greaves, Claire

Myocardial perfusion imaging (MPI) is a test that aids the diagnosis of coronary heart disease, of which pharmacological stress is a key component. An increase in demand had resulted in a 42 week waiting time for MPI in Leicester. This article looks at how implementing non-medically led stress tests reduced this waiting list. It discusses the obstacles involved and the measures needed to make the service a success.

Users' manual for computer program for three-dimensional analysis of coupler-cavity traveling wave tubes

NASA Technical Reports Server (NTRS)

Omalley, T. A.

1984-01-01

The use of the coupled cavity traveling wave tube for space communications has led to an increased interest in improving the efficiency of the basic interaction process in these devices through velocity resynchronization and other methods. A flexible, three dimensional, axially symmetric, large signal computer program was developed for use on the IBM 370 time sharing system. A users' manual for this program is included.

UV LED lighting for automated crystal centring

PubMed Central

Chavas, Leonard M. G.; Yamada, Yusuke; Hiraki, Masahiko; Igarashi, Noriyuki; Matsugaki, Naohiro; Wakatsuki, Soichi

2011-01-01

A direct outcome of the exponential growth of macromolecular crystallography is the continuously increasing demand for synchrotron beam time, both from academic and industrial users. As more and more projects entail screening a profusion of sample crystals, fully automated procedures at every level of the experiments are being implemented at all synchrotron facilities. One of the major obstacles to achieving such automation lies in the sample recognition and centring in the X-ray beam. The capacity of UV light to specifically react with aromatic residues present in proteins or with DNA base pairs is at the basis of UV-assisted crystal centring. Although very efficient, a well known side effect of illuminating biological samples with strong UV sources is the damage induced on the irradiated samples. In the present study the effectiveness of a softer UV light for crystal centring by taking advantage of low-power light-emitting diode (LED) sources has been investigated. The use of UV LEDs represents a low-cost solution for crystal centring with high specificity. PMID:21169682

Thermal management and light extraction in multi-chip and high-voltage LEDs by cup-shaped copper heat spreader technology

NASA Astrophysics Data System (ADS)

Horng, Ray-Hua; Hu, Hung-Lieh; Tang, Li-Shen; Ou, Sin-Liang

2013-03-01

For LEDs with original structure and copper heat spreader, the highest surface temperatures of 3×3 array LEDs modules were 52.6 and 42.67 °C (with 1050 mA injection current), while the highest surface temperatures of 4×4 array LEDs modules were 58.55 and 48.85 °C (with 1400 mA injection current), respectively. As the 5×5 array LEDs modules with original structure and copper heat spreader were fabricated, the highest surface temperatures at 1750 mA injection current were 68.51 and 56.73 °C, respectively. The thermal resistance of optimal LEDs array module with copper heat spreader on heat sink using compound solder is reduced obviously. On the other hand, the output powers of 3×3, 4×4 and 5×5 array LEDs modules with original structure were 3621.7, 6346.3 and 9760.4 mW at injection currents of 1050, 1400 and 1750 mA, respectively. Meanwhile, the output powers of these samples with copper heat spreader can be improved to 4098.5, 7150.3 and 10919.6 mW, respectively. The optical and thermal characteristics of array LEDs module have been improved significantly using the cup-shaped copper structure. Furthermore, various types of epoxy-packaged LEDs with cup-shaped structure were also fabricated. It is found that the light extraction efficiency of LED with semicircle package has 55% improvement as compared to that of LED with flat package. The cup-shaped copper structure was contacted directly with sapphire to enhance heat dissipation. In addition to efficient heat dissipation, the light extraction of the lateral emitting in high-power LEDs can be improved.

Illumination design for semiconductor backlight inspection and application extensions

NASA Astrophysics Data System (ADS)

Zhou, Wei; Rutherford, Todd; Hart, Darcy

2013-09-01

High speed strobe based illumination scheme is one of the most critical factors for high throughput semiconductor defect inspection applications. HB LEDs are always the first and best options for such applications due to numerous unique advantages such as excellent spatial and temporal stability, fast responding time, large and linear intensity dynamic range and no heat issue for the extremely low duty cycle applications. For some applications where a large area is required to be illuminated simultaneously, it remains a great challenge to efficiently package a large amount of HB-LEDs in a highly confined 3D space, to generate a seamless illuminated area with high luminance efficiency and spatial uniformity. A novel 3D structured collimation lens is presented in this paper. The non-circular edge shape reduces the intensity drop at the channel boundaries, while the secondary curvatures on the top of the collimator lens efficiently guides the light into desired angular space. The number of the edges and the radius of the top surface curvature are control parameters for the system level performance and the manufacture cost trade-off. The proposed 3D structured LED collimation lens also maintains the benefits of traditional LED collimation lens such as coupling efficiency and mold manufacture capability. The applications can be extended into other non-illumination area like parallelism measurement and solar panel concentrator etc.

Impact of industrial hammer mill rotor speed on extraction efficiency and quality of extra virgin olive oil.

PubMed

Polari, Juan J; Garcí-Aguirre, David; Olmo-García, Lucía; Carrasco-Pancorbo, Alegría; Wang, Selina C

2018-03-01

Crushing is a key step during olive oil extraction. Among commercial crushers, the hammer mill is the most widely used due to its robustness and high throughput. In the present work, the impact of hammer mill rotor speed on extraction yield and overall quality of super-high-density Arbosana olive oils were assessed in an industrial facility. Our results show that increasing the rotor speed from 2400rpm to 3600rpm led to a rise in oil yield of 1.2%, while conserving quality parameters. Sensory analysis showed more pungency with increased rotation speed, while others attributes were unaffected. Volatile compounds showed little variation with the differences in crusher speed; however, total phenols content, two relevant secoiridoids, and triterpenoids levels increased with rotor speed. Hammer mill rotor speed is a processing variable that can be tuned to increase the extraction efficiency and modulate the chemical composition of extra virgin olive oil. Copyright © 2017 Elsevier Ltd. All rights reserved.

Mitigating Structural Defects in Droop-Minimizing InGaN/GaN Quantum Well Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Zhibo; Chesin, Jordan; Singh, Akshay

2016-12-01

Modern commercial InGaN/GaN blue LEDs continue to suffer from efficiency droop, a reduction in efficiency with increasing drive current. External quantum efficiency (EQE) typically peaks at low drive currents (< 10 A cm 2) and drops monotonically at higher current densities, falling to <85% of the peak EQE at a drive current of 100 A cm 2. Mitigating droop-related losses will yield tremendous gains in both luminous efficacy (lumens/W) and cost (lumens/$). Such improvements are critical for continued large-scale market penetration of LED technologies, particularly in high-power and high flux per unit area applications. However, device structures that reduce droopmore » typically require higher indium content and are accompanied by a corresponding degradation in material quality which negates the droop improvement via enhanced Shockley-Read-Hall (SRH) recombination. In this work, we use advanced characterization techniques to identify and classify structural defects in InGaN/GaN quantum well (QW) heterostructures that share features with low-droop designs. Using aberration-corrected scanning transmission electron microscopy (C s-STEM), we find the presence of severe well width fluctuations (WWFs) in a number of low droop device architectures. However, the presence of WWFs does not correlate strongly with external quantum efficiency nor defect densities measured via deep level optical spectroscopy (DLOS). Hence, performance losses in the heterostructures of interest are likely dominated by nanoscale point or interfacial defects rather than large-scale extended defects.« less

The Effect of Photon Source on Heterogeneous Photocatalytic Oxidation of Ethanol by a Silica-Titania Composite

NASA Technical Reports Server (NTRS)

Coutts, Janelle L.; Levine, Lanfang H.; Richards, Jeffrey T.; Mazyck, David W.

2011-01-01

The objective of this study was to distinguish the effect of photon flux (i.e., photons per unit time reaching a surface) from that of photon energy (i.e., wavelength) of a photon source on the silica-titania composite (STC)-catalyzed degradation of ethanol in the gas phase. Experiments were conducted in a bench-scale annular reactor packed with STC pellets and irradiated with either a UV-A fluorescent black light blue lamp ((gamma)max=365 nm) at its maximum light intensity or a UV-C germicidal lamp ((gamma)max=254 nm) at three levels of light intensity. The STC-catalyzed oxidation of ethanol was found to follow zero-order kinetics with respect to CO2 production, regardless of the photon source. Increased photon flux led to increased EtOH removal, mineralization, and oxidation rate accompanied by lower intermediate concentration in the effluent. The oxidation rate was higher in the reactor irradiated by UV-C than by UV-A (38.4 vs. 31.9 nM/s) at the same photon flux, with similar trends for mineralization (53.9 vs. 43.4%) and reaction quantum efficiency (i.e., photonic efficiency, 63.3 vs. 50.1 nmol CO2 (mu)mol/photons). UV-C irradiation also led to decreased intermediate concentration in the effluent . compared to UV-A irradiation. These results demonstrated that STC-catalyzed oxidation is enhanced by both increased photon flux and photon energy.

Evolution of the global virtual water trade network.

PubMed

Dalin, Carole; Konar, Megan; Hanasaki, Naota; Rinaldo, Andrea; Rodriguez-Iturbe, Ignacio

2012-04-17

Global freshwater resources are under increasing pressure from economic development, population growth, and climate change. The international trade of water-intensive products (e.g., agricultural commodities) or virtual water trade has been suggested as a way to save water globally. We focus on the virtual water trade network associated with international food trade built with annual trade data and annual modeled virtual water content. The evolution of this network from 1986 to 2007 is analyzed and linked to trade policies, socioeconomic circumstances, and agricultural efficiency. We find that the number of trade connections and the volume of water associated with global food trade more than doubled in 22 years. Despite this growth, constant organizational features were observed in the network. However, both regional and national virtual water trade patterns significantly changed. Indeed, Asia increased its virtual water imports by more than 170%, switching from North America to South America as its main partner, whereas North America oriented to a growing intraregional trade. A dramatic rise in China's virtual water imports is associated with its increased soy imports after a domestic policy shift in 2000. Significantly, this shift has led the global soy market to save water on a global scale, but it also relies on expanding soy production in Brazil, which contributes to deforestation in the Amazon. We find that the international food trade has led to enhanced savings in global water resources over time, indicating its growing efficiency in terms of global water use.

A Robotic Platform for Quantitative High-Throughput Screening

PubMed Central

Michael, Sam; Auld, Douglas; Klumpp, Carleen; Jadhav, Ajit; Zheng, Wei; Thorne, Natasha; Austin, Christopher P.; Inglese, James

2008-01-01

Abstract High-throughput screening (HTS) is increasingly being adopted in academic institutions, where the decoupling of screening and drug development has led to unique challenges, as well as novel uses of instrumentation, assay formulations, and software tools. Advances in technology have made automated unattended screening in the 1,536-well plate format broadly accessible and have further facilitated the exploration of new technologies and approaches to screening. A case in point is our recently developed quantitative HTS (qHTS) paradigm, which tests each library compound at multiple concentrations to construct concentration-response curves (CRCs) generating a comprehensive data set for each assay. The practical implementation of qHTS for cell-based and biochemical assays across libraries of > 100,000 compounds (e.g., between 700,000 and 2,000,000 sample wells tested) requires maximal efficiency and miniaturization and the ability to easily accommodate many different assay formats and screening protocols. Here, we describe the design and utilization of a fully integrated and automated screening system for qHTS at the National Institutes of Health's Chemical Genomics Center. We report system productivity, reliability, and flexibility, as well as modifications made to increase throughput, add additional capabilities, and address limitations. The combination of this system and qHTS has led to the generation of over 6 million CRCs from > 120 assays in the last 3 years and is a technology that can be widely implemented to increase efficiency of screening and lead generation. PMID:19035846

Two-color light-emitting diodes with polarization-sensitive high extraction efficiency based on graphene

NASA Astrophysics Data System (ADS)

H, Sattarian; S, Shojaei; E, Darabi

2016-05-01

In the present study, graphene photonic crystals are employed to enhance the light extraction efficiency (LEE) of two-color, red and blue, light-emitting diode (LED). The transmission characteristics of one-dimensional (1D) Fibonacci graphene photonic crystal LED (FGPC-LED) are investigated by using the transfer matrix method and the scaling study is presented. We analyzed the influence of period, thickness, and permittivity in the structure to enhance the LEE. The transmission spectrum of 1D FGPC has been optimized in detail. In addition, the effects of the angle of incidence and the state of polarization are investigated. As the main result, we found the optimum values of relevant parameters to enhance the extraction of red and blue light from an LED as well as provide perfect omnidirectional and high peak transmission filters for the TE and TM modes.

Light Emitting Diodes and Astronomical Environments: Results from in situ Field Measurements

NASA Astrophysics Data System (ADS)

Craine, Brian L.; Craine, Eric R.

2015-05-01

Light emitting diode (LED) light fixtures are rapidly becoming industry standards for outdoor lighting. They are promoted on the strength of long lifetimes (hence economic efficiencies), low power requirements, directability, active brightness controls, and energy efficiency. They also tend to produce spectral shifts that are undesirable in astronomical settings, but which can be moderated by filters. LED lighting for continuous roadway and parking lot lighting is particularly popular, and many communities are in the process of retrofitting Low Pressure Sodium (LPS) and other lights by tens of thousands of new LED fixtures at a time. What is the impact of this process on astronomical observatories and on dark skies upon which amateur astronomers rely? We bypass modeling and predictions to make actual measurements of these lights in the field. We report on original ground, airborne, and satellite observations of LED lights and discuss their light budgets, zenith angle functions, and impacts on observatory environs.

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

PubMed Central

2016-01-01

We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p–n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal–organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate, and contacted using a flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm does not yield any degradation of the LED performance. The maximal measured external quantum efficiency of the white LED is 9.3%, and the wall plug efficiency is 2.4%. PMID:27331079

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

NASA Astrophysics Data System (ADS)

Wang, Min-Shuai; Huang, Xiao-Jing

2013-08-01

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal—organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Statistical analysis and yield management in LED design through TCAD device simulation

NASA Astrophysics Data System (ADS)

Létay, Gergö; Ng, Wei-Choon; Schneider, Lutz; Bregy, Adrian; Pfeiffer, Michael

2007-02-01

This paper illustrates how technology computer-aided design (TCAD), which nowadays is an essential part of CMOS technology, can be applied to LED development and manufacturing. In the first part, the essential electrical and optical models inherent to LED modeling are reviewed. The second part of the work describes a methodology to improve the efficiency of the simulation procedure by using the concept of process compact models (PCMs). The last part demonstrates the capabilities of PCMs using an example of a blue InGaN LED. In particular, a parameter screening is performed to find the most important parameters, an optimization task incorporating the robustness of the design is carried out, and finally the impact of manufacturing tolerances on yield is investigated. It is indicated how the concept of PCMs can contribute to an efficient design for manufacturing DFM-aware development.

Inactivation kinetics and efficiencies of UV-LEDs against Pseudomonas aeruginosa, Legionella pneumophila, and surrogate microorganisms.

PubMed

Rattanakul, Surapong; Oguma, Kumiko

2018-03-01

To demonstrate the effectiveness of UV light-emitting diodes (UV-LEDs) to disinfect water, UV-LEDs at peak emission wavelengths of 265, 280, and 300 nm were adopted to inactivate pathogenic species, including Pseudomonas aeruginosa and Legionella pneumophila, and surrogate species, including Escherichia coli, Bacillus subtilis spores, and bacteriophage Qβ in water, compared to conventional low-pressure UV lamp emitting at 254 nm. The inactivation profiles of each species showed either a linear or sigmoidal survival curve, which both fit well with the Geeraerd's model. Based on the inactivation rate constant, the 265-nm UV-LED showed most effective fluence, except for with E. coli which showed similar inactivation rates at 265 and 254 nm. Electrical energy consumption required for 3-log 10 inactivation (E E,3 ) was lowest for the 280-nm UV-LED for all microbial species tested. Taken together, the findings of this study determined the inactivation profiles and kinetics of both pathogenic bacteria and surrogate species under UV-LED exposure at different wavelengths. We also demonstrated that not only inactivation rate constants, but also energy efficiency should be considered when selecting an emission wavelength for UV-LEDs. Copyright © 2017 Elsevier Ltd. All rights reserved.

Effects of pitch and shape for diffraction grating in LED fog lamp

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Lin, Jun-Yu; Wu, Jih-Huah; Ma, Shih-Hsin; Yang, Chi-Hao

2011-10-01

The characteristics of light-emitting diodes (LEDs) that make them energy-efficient and long-lasting light source for general illumination have attracted a great attention from the lighting industry and commercial market. As everyone know LEDs have the advantages of environmental protection, long lifetime, fast response time (μs), low voltage and good mechanical properties. Their high luminance and the wide region of the dominant wavelengths within the entire visible spectrum mean that people have high anticipations for the applications of LEDs. The output lighting from reflector in the traditional fog lamp was required to fit the standard of the ECE R19 F3 regulation. Therefore, this study investigated the effects of pitch and angle for a diffraction grating in LED fog lamp. The light pattern of fog lamp must be satisfied ECE regulations, so a design of diffraction grating to shift down the lighting was required. There are three LEDs (Cree XLamp XPE LEDs) as the light source in the fog lamp for the illumination efficiency. Then, an optimal simulation of diffraction grating was done for the pitch and angle of the diffraction grating at the test distance of 25 meters. The best pitch and angle was 2mm and 60 degree for the grating shape of wedge type.

Comparative study of SiC- and Si-based photovoltaic inverters

NASA Astrophysics Data System (ADS)

Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

2017-01-01

This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

Nitride micro-LEDs and beyond--a decade progress review.

PubMed

Jiang, H X; Lin, J Y

2013-05-06

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed.

Color separation system with angularly positioned light source module for pixelized backlighting.

PubMed

Chen, Po-Chou; Lin, Hui-Hsiung; Chen, Cheng-Huan; Lee, Chi-Hung; Lu, Mao-Hong

2010-01-18

A color-separation system that angularly positions color LEDs to produce color separation and a lens array to focus this light onto the pixels is proposed. The LED rays from different incident angles are mapped into corresponding sub-pixel positions to efficiently display color image, which can be used to replace the absorbing color filter in the conventional liquid crystal layer. In this paper, the prototype backlight has been designed, fabricated and characterized. The measurement results of this module showed that a gain factor of transmission efficiency three times more than that of conventional color filters efficiency improvement and a larger color gamut are expected.

Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

NASA Astrophysics Data System (ADS)

Young, Nathan Garrett

The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from a lack of inversion symmetry in GaN's wurtzite crystal structure. These fields can be screened by using highly doped layers, but the extreme dopant densities predicted by simulation for complete screening may require using Ge as an alternative n-type dopant to Si. GaN:Ge layers with excellent electrical characteristics were grown by MOCVD with doping densities exceeding 1020 cm -3. However, their surface morphologies were very poor and they proved a poor screening dopant in LED structures. Using Si as the n-type screening dopant, LEDs with single QW active regions were grown, packaged, and tested. Biased photoluminescence showed strong evidence of complete polarization screening. The LEDs had low droop, but also low peak efficiencies. Possible explanations for trends in efficiency with varying QW width and field screening will be discussed.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED

PubMed Central

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-01

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology. PMID:25586148

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-01

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

NDIR gas sensing using high performance AlInSb mid-infrared LEDs as light source

NASA Astrophysics Data System (ADS)

Camargo, E. G.; Goda, Y.; Morohara, O.; Fujita, H.; Geka, H.; Ueno, K.; Shibata, Y.; Kuze, N.

2017-08-01

In this paper, we report the performance of room temperature operated mid-infrared light emitting diode (LED) with an InSb buffer layer and AlInSb active/barrier layers, which showed to be suitable for non-dispersive infrared (NDIR) gas sensing. Characterization of the LED was performed and we found that good carrier confinement and crystalline quality was responsible for its high performance. High efficiency light extraction was obtained by adopting backside emission architecture together with surface roughening treatment and TiO2 anti-reflection coating. The fabricated AlInSb LED showed 75% higher power conversion efficiency when compared with a commercially available device. The developed LED, together with a commercially available infrared (IR) detector equipped with band-pass optical filter (AK9710, manufactured by Asahi Kasei Microdevices) were coupled into a mirror system forming a light path length of 80 mm, which was tested for CO2 gas sensing. For a non-absorbing environment, sensor output of 8 nA was obtained by driving the LED with peak current of 100 mA and, by exposing the system at CO2 concentration of 1000 ppm signal reduction due to absorbance around 12% was obtained.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: augmented light output of GaN UV-LED.

PubMed

Jeong, Hyun; Jeong, Seung Yol; Park, Doo Jae; Jeong, Hyeon Jun; Jeong, Sooyeon; Han, Joong Tark; Jeong, Hee Jin; Yang, Sunhye; Kim, Ho Young; Baeg, Kang-Jun; Park, Sae June; Ahn, Yeong Hwan; Suh, Eun-Kyung; Lee, Geon-Woong; Lee, Young Hee; Jeong, Mun Seok

2015-01-14

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

Effect of different photoinitiators and reducing agents on cure efficiency and color stability of resin-based composites using different LED wavelengths.

PubMed

de Oliveira, Dayane Carvalho Ramos Salles; Rocha, Mateus Garcia; Gatti, Alexandre; Correr, Americo Bortolazzo; Ferracane, Jack Liborio; Sinhoret, Mario Alexandre Coelho

2015-12-01

To evaluate the effect of photoinitiators and reducing agents on cure efficiency and color stability of resin-based composites using different LED wavelengths. Model resin-based composites were associated with diphenyl(2,4,6-trimethylbenzoyl) phosphine oxide (TPO), phenylbis(2,4,6-trimethylbenzoyl) phosphine oxide (BAPO) or camphorquinone (CQ) associated with 2-(dimethylamino) ethyl methacrylate (DMAEMA), ethyl 4-(dimethyamino) benzoate (EDMAB) or 4-(N,N-dimethylamino) phenethyl alcohol (DMPOH). A narrow (Smartlite, Dentisply) and a broad spectrum (Bluephase G2, Ivoclar Vivadent) LEDs were used for photo-activation (20 J/cm(2)). Fourier transform infrared spectroscopy (FT-IR) was used to evaluate the cure efficiency for each composite, and CIELab parameters to evaluated color stability (ΔE00) after aging. The UV-vis absorption spectrophotometric analysis of each photoinitiator and reducing agent was determined. Data were analyzed using two-way ANOVA and Tukey's test for multiple comparisons (α=0.05). Higher cure efficiency was found for type-I photoinitiators photo-activated with a broad spectrum light, and for CQ-systems with a narrow band spectrum light, except when combined with an aliphatic amine (DMAEMA). Also, when combined with aromatic amines (EDMAB and DMPOH), similar cure efficiency with both wavelength LEDs was found. TPO had no cure efficiency when light-cured exclusively with a blue narrowband spectrum. CQ-systems presented higher color stability than type-I photoinitiators, especially when combined with DMPOH. After aging, CQ-based composites became more yellow and BAPO and TPO lighter and less yellow. However, CQ-systems presented higher color stability than type-I photoinitiators, as BAPO- and TPO-, despite their higher cure efficiency when photo-activated with corresponding wavelength range. Color matching is initially important, but color change over time will be one of the major reasons for replacing esthetic restorations; despite the less yellowing of these alternative photoinitiators, camphorquinone presented higher color stability. Copyright © 2015 Elsevier Ltd. All rights reserved.

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo

2014-07-07

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCsmore » is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.« less

Design of the control system for full-color LED display based on MSP430 MCU

NASA Astrophysics Data System (ADS)

Li, Xue; Xu, Hui-juan; Qin, Ling-ling; Zheng, Long-jiang

2013-08-01

The LED display incorporate the micro electronic technique, computer technology and information processing as a whole, it becomes the most preponderant of a new generation of display media with the advantages of bright in color, high dynamic range, high brightness and long operating life, etc. The LED display has been widely used in the bank, securities trading, highway signs, airport and advertising, etc. According to the display color, the LED display screen is divided into monochrome screen, double color display and full color display. With the diversification of the LED display's color and the ceaseless rise of the display demands, the LED display's drive circuit and control technology also get the corresponding progress and development. The earliest monochrome screen just displaying Chinese characters, simple character or digital, so the requirements of the controller are relatively low. With the widely used of the double color LED display, the performance of its controller will also increase. In recent years, the full color LED display with three primary colors of red, green, blue and grayscale display effect has been highly attention with its rich and colorful display effect. Every true color pixel includes three son pixels of red, green, blue, using the space colour mixture to realize the multicolor. The dynamic scanning control system of LED full-color display is designed based on MSP430 microcontroller technology of the low power consumption. The gray control technology of this system used the new method of pulse width modulation (PWM) and 19 games show principle are combining. This method in meet 256 level grayscale display conditions, improves the efficiency of the LED light device, and enhances the administrative levels feels of the image. Drive circuit used 1/8 scanning constant current drive mode, and make full use of the single chip microcomputer I/O mouth resources to complete the control. The system supports text, pictures display of 256 grayscale full-color LED screen.

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammersley, S.; Dawson, P.; Kappers, M. J.

2015-09-28

InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum efficiencies than their blue-emitting counter parts, a phenomenon referred to as the “green gap.” One of the main differences between green-emitting and blue-emitting samples is that the quantum well growth temperature is lower for structures designed to emit at longer wavelengths, in order to reduce the effects of In desorption. In this paper, we report on the impact of the quantum well growth temperature on the optical properties of InGaN/GaN multiple quantum wells designed to emit at 460 nmmore » and 530 nm. It was found that for both sets of samples increasing the temperature at which the InGaN quantum well was grown, while maintaining the same indium composition, led to an increase in the internal quantum efficiency measured at 300 K. These increases in internal quantum efficiency are shown to be due reductions in the non-radiative recombination rate which we attribute to reductions in point defect incorporation.« less

On the use of controls for subsonic transport performance improvement: Overview and future directions

NASA Technical Reports Server (NTRS)

Gilyard, Glenn; Espana, Martin

1994-01-01

Increasing competition among airline manufacturers and operators has highlighted the issue of aircraft efficiency. Fewer aircraft orders have led to an all-out efficiency improvement effort among the manufacturers to maintain if not increase their share of the shrinking number of aircraft sales. Aircraft efficiency is important in airline profitability and is key if fuel prices increase from their current low. In a continuing effort to improve aircraft efficiency and develop an optimal performance technology base, NASA Dryden Flight Research Center developed and flight tested an adaptive performance seeking control system to optimize the quasi-steady-state performance of the F-15 aircraft. The demonstrated technology is equally applicable to transport aircraft although with less improvement. NASA Dryden, in transitioning this technology to transport aircraft, is specifically exploring the feasibility of applying adaptive optimal control techniques to performance optimization of redundant control effectors. A simulation evaluation of a preliminary control law optimizes wing-aileron camber for minimum net aircraft drag. Two submodes are evaluated: one to minimize fuel and the other to maximize velocity. This paper covers the status of performance optimization of the current fleet of subsonic transports. Available integrated controls technologies are reviewed to define approaches using active controls. A candidate control law for adaptive performance optimization is presented along with examples of algorithm operation.

The effects of CO₂ addition along a pH gradient on wastewater microalgal photo-physiology, biomass production and nutrient removal.

PubMed

Sutherland, Donna L; Howard-Williams, Clive; Turnbull, Matthew H; Broady, Paul A; Craggs, Rupert J

2015-03-01

Carbon limitation in domestic wastewater high rate algal ponds is thought to constrain microalgal photo-physiology and productivity, particularly in summer. This paper investigates the effects of CO₂ addition along a pH gradient on the performance of wastewater microalgae in high rate algal mesocosms. Performance was measured in terms of light absorption, electron transport rate, photosynthetic efficiency, biomass production and nutrient removal efficiency. Light absorption by the microalgae increased by up to 128% with increasing CO₂ supply, while a reduction in the package effect meant that there was less internal self-shading thereby increasing the efficiency of light absorption. CO₂ augmentation increased the maximum rate of both electron transport and photosynthesis by up to 256%. This led to increased biomass, with the highest yield occurring at the highest dissolved inorganic carbon/lowest pH combination tested (pH 6.5), with a doubling of chlorophyll-a (Chl-a) biomass while total microalgal biovolume increased by 660% in Micractinium bornhemiense and by 260% in Pediastrum boryanum dominated cultures. Increased microalgal biomass did not off-set the reduction in ammonia volatilisation in the control and overall nutrient removal was lower with CO₂ than without. Microalgal nutrient removal efficiency decreased as pH decreased and may have been related to decreased Chl-a per cell. This experiment demonstrated that CO₂ augmentation increased microalgal biomass in two distinct communities, however, care must be taken when interpreting results from standard biomass measurements with respect to CO₂ augmentation. Copyright © 2014 Elsevier Ltd. All rights reserved.

New, Efficient Optically Pumped Solid State Lasers.

DTIC Science & Technology

1989-02-21

Lasers", during the contract period from 15 August 1984 thru 11 November 1988 (AFOSR-88-0378) has led to some notable advances. This effort h,.s focused...lower laser states of both Er and 1Ho. This work has led to the inves t igation of the Nd,Er ion-ion interactions in other crystals such as Nd,Er:YALO...backed pyrex reflector. While the laser may work in a gold-plated cavity, the many visible, blue and near uv pump bands suggest better efficiency is

Evaluation of True Power Luminous Efficiency from Experimental Luminance Values

NASA Astrophysics Data System (ADS)

Tsutsui, Tetsuo; Yamamato, Kounosuke

1999-05-01

A method for obtaining true external power luminous efficiencyfrom experimentally obtained luminance in organic light-emittingdiodes (LEDs) wasdemonstrated. Conventional two-layer organic LEDs with different electron-transport layer thicknesses wereprepared. Spatial distributions of emission intensities wereobserved. The large deviation in both emission spectra and spatialemission patterns were observed when the electron-transport layerthickness was varied. The deviation of emission patterns from thestandard Lambertian pattern was found to cause overestimations ofpower luminous efficiencies as large as 30%. A method for evaluatingcorrection factors was proposed.

Local surface plasmon enhanced polarization and internal quantum efficiency of deep ultraviolet emissions from AlGaN-based quantum wells.

PubMed

Zhang, Cai; Tang, Ning; Shang, Liangliang; Fu, Lei; Wang, Weiying; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

2017-05-24

We report the enhancement of the polarization and internal quantum efficiency (IQE) of deep-UV LEDs by evaporating Al nanoparticles on the device surface to induce localized surface plasmons (LSPs). The deep-UV LEDs polarization is improved due to part of TM emission turns into TE emission through LSPs coupling. The significantly enhanced IQE is attributed to LSPs coupling, which suppress the participation of delocalized and dissociated excitons to non-radiative recombination process.

Behaviour of aqueous sulfamethizole solution and temperature effects in cold plasma oxidation treatment.

PubMed

Sokolov, Alexander; Louhi-Kultanen, Marjatta

2018-06-07

The increase in volume and variety of pharmaceuticals found in natural water bodies has become an increasingly serious environmental problem. The implementation of cold plasma technology, specifically gas-phase pulsed corona discharge (PCD), for sulfamethizole abatement was studied in the present work. It was observed that sulfamethizole is easily oxidized by PCD. The flow rate and pH of the solution have no significant effect on the oxidation. Treatment at low pulse repetition frequency is preferable from the energy efficiency point of view but is more time-consuming. The maximum energy efficiency was around 120 g/kWh at half-life and around 50 g/kWh at the end of the treatment. Increasing the solution temperature from room temperature to 50 °C led to a significant reaction retardation of the process and decrease in energy efficiency. The pseudo-first order reaction rate constant (k 1 ) grows with increase in pulse repetition frequency and does not depend on pH. By contrast, decreasing frequency leads to a reduction of the second order reaction rate constant (k 2 ). At elevated temperature of 50 °C, the k 1 , k 2 values decrease 2 and 2.9 times at 50 pps and 500 pps respectively. Lower temperature of 10 °C had no effect on oxidation efficiency compared with room temperature.

Improving confocal microscopy with solid-state semiconductor excitation sources

NASA Astrophysics Data System (ADS)

Sivers, Nelson L.

To efficiently excite the fluorescent dyes used in imaging biological samples with a confocal microscope, the wavelengths of the exciting laser must be near the fluorochrome absorption peak. However, this causes imaging problems when the fluorochrome absorption and emission spectra overlap significantly, i.e. have small Stokes shifts, which is the case for most fluorochromes that emit in the red to infrared. As a result, the reflected laser excitation cannot be distinguished from the information-containing fluorescence signal. However, cryogenically cooling the exciting laser diode enabled the laser emission wavelengths to be tuned to shorter wavelengths, decreasing the interference between the laser and the fluorochrome's fluorescence. This reduced the amount of reflected laser light in the confocal image. However, the cooled laser diode's shorter wavelength signal resulted in slightly less efficient fluorochrome excitation. Spectrophotometric analysis showed that as the laser diodes were cooled, their output power increased, which more than compensated for the lower fluorochrome excitation and resulted in significantly more intense fluorescence. Thus, by tuning the laser diode emission wavelengths away from the fluorescence signal, less reflected laser light and more fluorescence information reached the detector, creating images with better signal to noise ratios. Additionally, new, high, luminous flux, light-emitting diodes (LEDs) are now powerful enough to create confocal fluorescence signals comparable to those produced by the traditional laser excitation sources in fluorescence confocal microscopes. The broader LED spectral response effectively excited the fluorochrome, yet was spectrally limited enough for standard filter sets to separate the LED excitation from the fluorochrome fluorescence signal. Spectrophotometric analysis of the excitation and fluorescence spectra of several fluorochromes showed that high-powered, LED-induced fluorescence contained the same spectral information and could be more intense than that produced by lasers. An alternative, LED-based, confocal microscope is proposed in this thesis that would be capable of exciting multiple fluorochromes in a single specimen, producing images of several distinct cellular components simultaneously. The inexpensive, LED-based, confocal microscope would require lower peak excitation intensities to produce fluorescence signals equal to those produced by laser excitation, reducing cellular damage and slowing fluorochrome photobleaching.

Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, M.; Rashidi, A.; Aragon, A. A.; Oh, S. H.; Rishinaramangalam, A. K.; DenBaars, S. P.; Feezell, D.

2018-01-01

High-speed InGaN/GaN blue light-emitting diodes (LEDs) are needed for future gigabit-per-second visible-light communication systems. Large LED modulation bandwidths are typically achieved at high current densities, with reports close to 1 GHz bandwidth at current densities ranging from 5 to 10 kA/cm2. However, the internal quantum efficiency (IQE) of InGaN/GaN LEDs is quite low at high current densities due to the well-known efficiency droop phenomenon. Here, we show experimentally that nonpolar and semipolar orientations of GaN enable higher modulation bandwidths at low current densities where the IQE is expected to be higher and power dissipation is lower. We experimentally compare the modulation bandwidth vs. current density for LEDs on nonpolar (10 1 ¯ 0 ), semipolar (20 2 ¯ 1 ¯) , and polar (" separators="|0001 ) orientations. In agreement with wavefunction overlap considerations, the experimental results indicate a higher modulation bandwidth for the nonpolar and semipolar LEDs, especially at relatively low current densities. At 500 A/cm2, the nonpolar LED has a 3 dB bandwidth of ˜1 GHz, while the semipolar and polar LEDs exhibit bandwidths of 260 MHz and 75 MHz, respectively. A lower carrier density for a given current density is extracted from the RF measurements for the nonpolar and semipolar LEDs, consistent with the higher wavefunction overlaps in these orientations. At large current densities, the bandwidth of the polar LED approaches that of the nonpolar and semipolar LEDs due to coulomb screening of the polarization field. The results support using nonpolar and semipolar orientations to achieve high-speed LEDs at low current densities.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.

PubMed

Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

2016-12-01

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness

NASA Astrophysics Data System (ADS)

Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

2016-10-01

We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

The initiating radical yields and the efficiency of polymerization for various dental photoinitiators excited by different light curing units.

PubMed

Neumann, Miguel G; Schmitt, Carla C; Ferreira, Giovana C; Corrêa, Ivo C

2006-06-01

To evaluate the efficiency of the photopolymerization of dental resins it is necessary to know to what extent the light emitted by the light curing units is absorbed by the photoinitiators. On the other hand, the efficiency of the absorbed photons to produce species that launch the polymerization process is also of paramount importance. Therefore, the previously determined PAE (photon absorption efficiency) is used in conjunction with the polymerization quantum yields for the photoinitiators, in order to be able to compare the total process on an equivalent basis. This parameter can be used to identify the best performance for the photochemical process with specific photoinitiators. The efficiency of LED (Ultrablue IS) and QTH (Optilux 401) lamps were tested comparing their performances with the photoinitiators camphorquinone (CQ); phenylpropanedione (PPD); monoacylphosphine oxide (Lucirin TPO); and bisacylphosphine oxide (Irgacure 819). The extent of photopolymerization per absorbed photon was determined from the polymerization quantum yields obtained by using the photoinitiators to polymerize methyl methacrylate, and afterwards combined with the previously determined PAEs. Although CQ presents a rather low polymerization quantum yield, its photopolymerization efficiency is practically the highest when irradiated with the Ultrablue LED. On the other hand, Lucirin is much more efficient than the other photoinitiators when irradiated with a QTH lamp, due to its high quantum yield and the overlap between its absorption spectrum and the output of the visible lamp light. Difference in photopolymerization efficiencies arise when combinations of photoinitiators are used, and when LED sources are used in preference to QTH. Mechanistic understanding is essential to optimal initiator formulation.

New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

NASA Astrophysics Data System (ADS)

Broell, Markus; Sundgren, Petrus; Rudolph, Andreas; Schmid, Wolfgang; Vogl, Anton; Behringer, Martin

2014-02-01

We present our latest results on developments of infrared and red light emitting diodes. Both chiptypes are based on the Thinfilm technology. For infrared the brightness has been raised by 25% with respect to former products in a package with standard silicon casting, corresponding to a brightness increase of 33% for the bare chip. In a lab package a wallplug efficiency of more than 72% at a wavelength of 850nm could be reached. For red InGaAlP LEDs we could demonstrate a light output in excess of 200lm/W and a brightness of 133lm at a typical operating current of 350mA.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength ( 1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlOx DBRs.

Steady-state photoluminescent excitation characterization of semiconductor carrier recombination.

PubMed

Bhosale, J S; Moore, J E; Wang, X; Bermel, P; Lundstrom, M S

2016-01-01

Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique can also provide a contactless way to measure the external quantum efficiency of a solar cell.