Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

2018-04-01

In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

Ag+12 ion induced modifications of structural and optical properties of ZnO-PMMA nanocomposite films

NASA Astrophysics Data System (ADS)

Sharma, Sarla; Vyas, Rishi; Vijay, Y. K.

2013-02-01

The influence of swift heavy ion (SHI) irradiation on structural and photoluminescence (PL) properties of ZnO-PMMA nanocomposite films, prepared by solution casting method, was studied. The ZnO-PMMA nanocomposite films were irradiated using 120 MeV Ag+12 ions at different fluences varying from 1×1011 to 1×1013 ions/cm2. The intensity of the X-ray diffraction peaks is increased at the high fluence, without evolution of any new peak. A shift in absorption edge (i.e. shift in optical band gap) towards higher wavelength was observed after irradiation and PL from ZnO-PMMA nanocomposite films is found to increase up to a critical fluence and then found to be suppressed for higher fluence (1×1012 ion/cm2). The change in photoluminescence after irradiation can be attributed to the change in microstructure of PMMA matrix as well as the agglomeration of ZnO nanoparticles.

Effect of 120 MeV Ag9+ ion irradiation of YCOB single crystals

NASA Astrophysics Data System (ADS)

Arun Kumar, R.; Dhanasekaran, R.

2012-09-01

Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag9+ ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 × 1013, 5 × 1013 and 1 × 1014 ions/cm2 fluences at room temperature and with 5 × 1013 ions/cm2 fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

Investigation on optical absorption properties of ion irradiated single walled carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishalli,, E-mail: vishalli-2008@yahoo.com; Dharamvir, Keya, E-mail: keya@pu.ac.in; Kaur, Ramneek

2015-08-28

In the present study change in the optical absorption properties of single walled carbon nanotubes (SWCNTs) under nickel ion (60 MeV) irradiation at various fluences has been investigated. Langmuir Blodgett technique is used to deposit SWCNT thin film of uniform thickness. AFM analysis shows a network of interconnected bundles of nanotubes. UV-Vis-NIR absorption spectra indicate that the sample mainly contain SWCNTs of semiconducting nature. It has been found in absorption spectra that there is decrease in the intensity of the characteristic SWCNT peaks with increase in fluence. At fluence value 1×10{sup 14} ions/cm{sup 2} there is almost complete suppression of themore » characteristic SWCNTs peaks.The decrease in the optical absorption with increase in fluence is due to the increase in the disorder in the system which leads to the decrease in optically active states.« less

Effects of very low fluences of high-energy protons or iron ions on irradiated and bystander cells.

PubMed

Yang, H; Magpayo, N; Rusek, A; Chiang, I-H; Sivertz, M; Held, K D

2011-12-01

In space, astronauts are exposed to radiation fields consisting of energetic protons and high atomic number, high-energy (HZE) particles at very low dose rates or fluences. Under these conditions, it is likely that, in addition to cells in an astronaut's body being traversed by ionizing radiation particles, unirradiated cells can also receive intercellular bystander signals from irradiated cells. Thus this study was designed to determine the dependence of DNA damage induction on dose at very low fluences of charged particles. Novel techniques to quantify particle fluence have been developed at the NASA Space Radiation Biology Laboratory (NSRL) at Brookhaven National Laboratory (BNL). The approach uses a large ionization chamber to visualize the radiation beam coupled with a scintillation counter to measure fluence. This development has allowed us to irradiate cells with 1 GeV/nucleon protons and iron ions at particle fluences as low as 200 particles/cm(2) and quantify biological responses. Our results show an increased fraction of cells with DNA damage in both the irradiated population and bystander cells sharing medium with irradiated cells after low fluences. The fraction of cells with damage, manifest as micronucleus formation and 53BP1 focus induction, is about 2-fold higher than background at doses as low as ∼0.47 mGy iron ions (∼0.02 iron ions/cell) or ∼70 μGy protons (∼2 protons/cell). In the irradiated population, irrespective of radiation type, the fraction of damaged cells is constant from the lowest damaging fluence to about 1 cGy, above which the fraction of damaged cells increases with dose. In the bystander population, the level of damage is the same as in the irradiated population up to 1 cGy, but it does not increase above that plateau level with increasing dose. The data suggest that at fluences of high-energy protons or iron ions less than about 5 cGy, the response in irradiated cell populations may be dominated by the bystander response.

Ion irradiation induced defect evolution in Ni and Ni-based FCC equiatomic binary alloys

DOE PAGES

Jin, Ke; Zhang, Yanwen; Bei, Hongbin

2015-09-09

In order to explore the chemical effects on radiation response of alloys with multi-principal elements, defect evolution under Au ion irradiation was investigated in the elemental Ni, equiatomic NiCo and NiFe alloys. Single crystals were successfully grown in an optical floating zone furnace and their (100) surfaces were irradiated with 3 MeV Au ions at fluences ranging from 1 × 10 13 to 5 × 10 15 ions cm –2 at room temperature. The irradiation-induced defect evolution was analyzed by using ion channeling technique. Experiment shows that NiFe is more irradiation-resistant than NiCo and pure Ni at low fluences. Withmore » continuously increasing the ion fluences, damage level is eventually saturated for all materials but at different dose levels. The saturation level in pure Ni appears at relatively lower irradiation fluence than the alloys, suggesting that damage accumulation slows down in the alloys. Here, under high-fluence irradiations, pure Ni has wider damage ranges than the alloys, indicating that defects in pure Ni have high mobility.« less

Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

NASA Astrophysics Data System (ADS)

Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

2017-12-01

Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (P<0.05) with increasing ion fluences. Biofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

Optical emission spectroscopy of carbon laser plasma ion source

NASA Astrophysics Data System (ADS)

Balki, Oguzhan; Rahman, Md. Mahmudur; Elsayed-Ali, Hani E.

2018-04-01

Carbon laser plasma generated by an Nd:YAG laser (wavelength 1064 nm, pulse width 7 ns, fluence 4-52 J cm-2) is studied by optical emission spectroscopy and ion time-of-flight. Up to C4+ ions are detected with the ion flux strongly dependent on the laser fluence. The increase in ion charge with the laser fluence is accompanied by observation of multicharged ion lines in the optical spectra. The time-integrated electron temperature Te is calculated from the Boltzmann plot using the C II lines at 392.0, 426.7, and 588.9 nm. Te is found to increase from ∼0.83 eV for a laser fluence of 22 J cm-2 to ∼0.90 eV for 40 J cm-2. The electron density ne is obtained from the Stark broadened profiles of the C II line at 392 nm and is found to increase from ∼ 2 . 1 × 1017cm-3 for 4 J cm-2 to ∼ 3 . 5 × 1017cm-3 for 40 J cm-2. Applying an external electric field parallel to the expanding plume shows no effect on the line emission intensities. Deconvolution of ion time-of-flight signal with a shifted Maxwell-Boltzmann distribution for each charge state results in an ion temperature Ti ∼4.7 and ∼6.0 eV for 20 and 36 J cm-2, respectively.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions

NASA Astrophysics Data System (ADS)

Puttaraksa, Nitipon; Norarat, Rattanaporn; Laitinen, Mikko; Sajavaara, Timo; Singkarat, Somsorn; Whitlow, Harry J.

2012-02-01

Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the window Θ0⩽Θ<Θ, where Θ0 and Θ represent the clearing and cross-linking onset doses, respectively. In this work we have used the programmable proximity aperture ion beam lithography systems in Chiang Mai and Jyväskylä to determine the exposure characteristics in terms of fluence for 2 MeV protons, 3 MeV 4He and 6 MeV 12C ions, respectively. After exposure the samples were developed in 7:3 by volume propan-2-ol:de-ionised water mixture. At low fluences, where the fluence is below the clearing fluence, the exposed regions were characterised by rough regions, particularly for He with holes around the ion tracks. As the fluence (dose) increases so that the dose exceeds the clearing dose, the PMMA is uniformly removed with sharp vertical walls. When Θ exceeds the cross-linking onset fluence, the bottom of the exposed regions show undissolved PMMA.

Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Sagheer, Riffat; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Rashid, Rashad; Mahmood, Mazhar

2015-09-01

Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C+ ion implantation effects on PMMA at different fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV-Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 1014 to 5 × 1015 ions/cm2. The existence of amorphization and sp2-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV-Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10-10 (Ω-cm)-1 (pristine) to (0.32 ± 0.01) × 10-5 (Ω-cm)-1 (irradiated sample).

Dynamic defect annealing in wurtzite MgZnO implanted with Ar ions

NASA Astrophysics Data System (ADS)

Azarov, A. Yu.; Wendler, E.; Du, X. L.; Kuznetsov, A. Yu.; Svensson, B. G.

2015-09-01

Successful implementation of ion beams for modification of ternary ZnO-based oxides requires understanding and control of radiation-induced defects. Here, we study structural disorder in wurtzite ZnO and MgxZn1-xO (x ⩽ 0.3) samples implanted at room and 15 K temperatures with Ar ions in a wide fluence range (5 × 1012-3 × 1016 cm-2). The samples were characterized by Rutherford backscattering/channeling spectrometry performed in-situ without changing the sample temperature. The results show that all the samples exhibit high radiation resistance and cannot be rendered amorphous even for high ion fluences. Increasing the Mg content leads to some damage enhancement near the surface region; however, irrespective of the Mg content, the fluence dependence of bulk damage in the samples displays the so-called IV-stage evolution with a reverse temperature effect for high ion fluences.

Electronic excitation induced modifications of structural, electrical and optical properties of Cu-C60 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Inani, H.; Singhal, R.; Sharma, P.; Vishnoi, R.; Ojha, S.; Chand, S.; Sharma, G. D.

2017-09-01

High energy ion irradiation significantly affects the size and shape of nanoparticles in composites. Low concentration metal fraction embedded in fullerene matrix in form of nanocomposites was synthesized by thermal co-evaporation method. Swift heavy ion irradiation was performed with 120 MeV Au ion beam on Cu-C60 nanocomposites at different fluences 1 × 1012, 3 × 1012, 6 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Absorption spectra demonstrated that absorption intensity of nanocomposite thin film was increased whereas absorption modes of fullerene C60 were diminished with fluence. Rutherford backscattering spectroscopy was also performed to estimate the thickness of the film and atomic metal fraction in matrix and found to be 45 nm and 3%, respectively. Transmission electron microscopy was performed for structural and particle size evaluation of Cu nanoparticles (NPs) in fullerene C60 matrix. A growth of Cu nanoparticles is observed at a fluence of 3 × 1013 ions/cm2 with a bi-modal distribution in fullerene C60. Structural evolution of fullerene C60 matrix with increasing fluence of 120 MeV Au ion beam is studied by Raman spectroscopy which shows the amorphization of matrix (fullerene C60) at lower fluence. The growth of Cu nanoparticles is explained using the phenomena of Ostwald ripening.

Effect of Ar ion on the surface properties of low density polyethylene

NASA Astrophysics Data System (ADS)

Zaki, M. F.

2016-04-01

In this paper, low-density polyethylene (LDPE) was irradiated by argon ion with different fluences up to 1015ions/cm2. The optical, chemical and hardness properties have been investigated using UV-Vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and micro-indentation tester, respectively. The results showed the ion beam bombardment induced decreases in the transmittance of the irradiated polymer samples. This change in transmittance can be attributed to the formation of conjugated bonds i.e. possible formation of defects and/or carbon clusters. The indirect optical band gap decreased from 3.0 eV for the pristine sample to 2.3 eV for that sample irradiated with the highest fluence of the Ar ion beam. Furthermore, the number of carbon atoms and clusters increased with increasing Ar ion fluences. FTIR spectra showed the formation of new bands of the bombarded polymer samples. Furthermore, polar groups were created on the surface of the irradiated samples which refer to the increase of the hydrophilic nature of the surface of the irradiated samples. The Vicker's hardness increased from 4.9 MPa for the pristine sample to 17.9 MPa for those bombarded at the highest fluence. This increase is attributed to the increase in the crosslinking and alterations of the bombarded surface into hydrogenated amorphous carbon, which improves the hardness of the irradiated samples. The bombarded LDPE surfaces may be used in special applications to the field of the micro-electronic devices and shock absorbers.

Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velisa, Gihan; Wendler, Elke; Xue, Haizhou

The lack of fundamental understanding on the coupled effects of energy deposition to electrons and atomic nuclei on defect processes and irradiation response poses a significant roadblock for the design and control of material properties. In this work, SrTiO 3 has been irradiated with various ion species over a wide range of ion fluences at room temperature with a goal to deposit different amounts of energy to target electrons and atomic nuclei by varying the ratio of electronic to nuclear energy loss. Here, the results unambiguously show a dramatic difference in behavior of SrTiO 3 irradiated with light ions (Ne,more » O) compared to heavy ions (Ar). While the damage accumulation and amorphization under Ar ion irradiation are consistent with previous observations and existing models, the damage accumulation under Ne irradiation reveals a quasi-saturation state at a fractional disorder of 0.54 at the damage peak for an ion fluence corresponding to a dose of 0.5 dpa; this is followed by further increases in disorder with increasing ion fluence. In the case of O ion irradiation, the damage accumulation at the damage peak closely follows that for Ne ion irradiation up to a fluence corresponding to a dose of 0.5 dpa, where a quasi-saturation of fractional disorder level occurs at about 0.48; however, in this case, the disorder at the damage peak decreases slightly with further increases in fluence. This behavior is associated with changes in kinetics due to irradiation-enhanced diffusional processes that are dependent on electronic energy loss and the ratio of electronic to nuclear energy dissipation. Lastly, these findings are critical for advancing the fundamental understanding of ion-solid interactions and for a large number of applications in oxide electronics where SrTiO 3 is a foundational material.« less

Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Kai; Wang, Yibo; Li, Zhuguo, E-mail: lizg@sjtu.edu.cn

Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enrichedmore » region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.« less

Swift heavy ion-induced radiation damage in isotropic graphite studied by micro-indentation and in-situ electrical resistivity

NASA Astrophysics Data System (ADS)

Hubert, Christian; Voss, Kay Obbe; Bender, Markus; Kupka, Katharina; Romanenko, Anton; Severin, Daniel; Trautmann, Christina; Tomut, Marilena

2015-12-01

Due to its excellent thermo-physical properties and radiation hardness, isotropic graphite is presently the most promising material candidate for new high-power ion accelerators which will provide highest beam intensities and energies. Under these extreme conditions, specific accelerator components including production targets and beam protection modules are facing the risk of degradation due to radiation damage. Ion-beam induced damage effects were tested by irradiating polycrystalline, isotropic graphite samples at the UNILAC (GSI, Darmstadt) with 4.8 MeV per nucleon 132Xe, 150Sm, 197Au, and 238U ions applying fluences between 1 × 1011 and 1 × 1014 ions/cm2. The overall damage accumulation and its dependence on energy loss of the ions were studied by in situ 4-point resistivity measurements. With increasing fluence, the electric resistivity increases due to disordering of the graphitic structure. Irradiated samples were also analyzed off-line by means of micro-indentation in order to characterize mesoscale effects such as beam-induced hardening and stress fields within the specimen. With increasing fluence and energy loss, hardening becomes more pronounced.

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

NASA Astrophysics Data System (ADS)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

Effect of He+ fluence on surface morphology and ion-irradiation induced defect evolution in 7075 aluminum alloys

NASA Astrophysics Data System (ADS)

Ni, Kai; Ma, Qian; Wan, Hao; Yang, Bin; Ge, Junjie; Zhang, Lingyu; Si, Naichao

2018-02-01

The evolution of microstructure for 7075 aluminum alloys with 50 Kev helium ions irradiation were studied by using optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM). The fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 were selected, and irradiation experiments were conducted at room temperatures. The transmission process of He+ ions was simulated by using SRIM software, including distribution of ion ranges, energy losses and atomic displacements. Experimental results show that irradiated pits and micro-cracks were observed on irradiation sample surface, and the size of constituent particles (not including Mg2Si) decreased with the increasing dose. The x-ray diffraction results of the pair of peaks is better resolved in irradiated samples might indicate that the stressed structure consequence due to crystal defects (vacancies and interstitials) after He+ implantation. TEM observation indicated that the density of MgZn2 phase was significantly reduced after helium ion irradiation which is harmful to strength. Besides, the development of compressive stress produced a large amount of dislocation defects in the 1015 ions cm-2 sample. Moreover, higher fluence irradiation produced more dislocations in sample. At fluence of 1016 ions cm-2, dislocation wall formed by dislocation slip and aggregation in the interior of grains, leading to the refinement of these grains. As fluence increased to 1017 ions cm-2, dislocation loops were observed in pinned dislocation. Moreover, dislocation as effective defect sink, irradiation-induced vacancy defects aggregated to these sinks, and resulted in the formation of helium bubbles in dislocation.

Controlled nanopatterning & modifications of materials by energetic ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, O. P.

Compound semiconductors (InP, InAs and GaSb) has been exposed to energetic 3 keV Ar{sup +} ions for a varying fluence range of 10{sup 13} ions/cm{sup 2} to 10{sup 18} ions/cm{sup 2} at room temperature. Morphological modifications of the irradiated surfaces have been investigated by Scanning Tunneling Microscopy (STM) in UHV conditions. It is observed that InP and GaSb have fluence dependent nanopattering e.g. nanoneedle, aligned nanodots, superimposed nanodots ripple like structures while InAs has little fluence dependent behaviour indicating materials dependent growth of features on irradiated surfaces. Moreover, surface roughness and wavelength of the features are also depending on themore » materials and fluences. The RMS surface roughness has been found to be increased rapidly in the early stage of irradiation followed by slower escalate rate and later tends to saturate indicating influence of the nonlinear processes.« less

Effect of Ar ion on the surface properties of low density polyethylene.

PubMed

Zaki, M F

2016-04-15

In this paper, low-density polyethylene (LDPE) was irradiated by argon ion with different fluences up to 10(15) ions/cm(2). The optical, chemical and hardness properties have been investigated using UV-Vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and micro-indentation tester, respectively. The results showed the ion beam bombardment induced decreases in the transmittance of the irradiated polymer samples. This change in transmittance can be attributed to the formation of conjugated bonds i.e. possible formation of defects and/or carbon clusters. The indirect optical band gap decreased from 3.0 eV for the pristine sample to 2.3 eV for that sample irradiated with the highest fluence of the Ar ion beam. Furthermore, the number of carbon atoms and clusters increased with increasing Ar ion fluences. FTIR spectra showed the formation of new bands of the bombarded polymer samples. Furthermore, polar groups were created on the surface of the irradiated samples which refer to the increase of the hydrophilic nature of the surface of the irradiated samples. The Vicker's hardness increased from 4.9 MPa for the pristine sample to 17.9 MPa for those bombarded at the highest fluence. This increase is attributed to the increase in the crosslinking and alterations of the bombarded surface into hydrogenated amorphous carbon, which improves the hardness of the irradiated samples. The bombarded LDPE surfaces may be used in special applications to the field of the micro-electronic devices and shock absorbers. Copyright © 2016 Elsevier B.V. All rights reserved.

Conversion from dose-to-graphite to dose-to-water in an 80 MeV/A carbon ion beam.

PubMed

Rossomme, S; Palmans, H; Shipley, D; Thomas, R; Lee, N; Romano, F; Cirrone, P; Cuttone, G; Bertrand, D; Vynckier, S

2013-08-21

Based on experiments and numerical simulations, a study is carried out pertaining to the conversion of dose-to-graphite to dose-to-water in a carbon ion beam. This conversion is needed to establish graphite calorimeters as primary standards of absorbed dose in these beams. It is governed by the water-to-graphite mass collision stopping power ratio and fluence correction factors, which depend on the particle fluence distributions in each of the two media. The paper focuses on the experimental and numerical determination of this fluence correction factor for an 80 MeV/A carbon ion beam. Measurements have been performed in the nuclear physics laboratory INFN-LNS in Catania (Sicily, Italy). The numerical simulations have been made with a Geant4 Monte Carlo code through the GATE simulation platform. The experimental data are in good agreement with the simulated results for the fluence correction factors and are found to be close to unity. The experimental values increase with depth reaching 1.010 before the Bragg peak region. They have been determined with an uncertainty of 0.25%. Different numerical results are obtained depending on the level of approximation made in calculating the fluence correction factors. When considering carbon ions only, the difference between measured and calculated values is maximal just before the Bragg peak, but its value is less than 1.005. The numerical value is close to unity at the surface and increases to 1.005 near the Bragg peak. When the fluence of all charged particles is considered, the fluence correction factors are lower than unity at the surface and increase with depth up to 1.025 before the Bragg peak. Besides carbon ions, secondary particles created due to nuclear interactions have to be included in the analysis: boron ions ((10)B and (11)B), beryllium ions ((7)Be), alpha particles and protons. At the conclusion of this work, we have the conversion of dose-to-graphite to dose-to-water to apply to the response of a graphite calorimeter in an 80 MeV/A carbon ion beam. This conversion consists of the product of two contributions: the water-to-graphite electronic mass collision stopping power ratio, which is equal to 1.115, and the fluence correction factor which varies linearly with depth, as k(fl, all) = 0.9995 + 0.0048(zw-eq). The latter has been determined on the basis of experiments and numerical simulations.

Plasma focus ion beam-scaling laws

NASA Astrophysics Data System (ADS)

Saw, S. H.

2014-08-01

Measurements on plasma focus ion beams include various advanced techniques producing a variety of data which has yet to produce benchmark numbers. Recent numerical experiments using an extended version of the Lee Code has produced reference numbers and scaling trends for number and energy fluence of deuteron beams as functions of stored energy E0. At the pinch exit the ion number fluence (ions m-2) and energy fluence (J m-2) computed as 2.4-7.8×1020 and 2.2-33×106 respectively were found to be independent of E0 from 0.4 - 486 kJ. This work was extended to the ion beams for various gases. The results show that, for a given plasma focus, the fluence, flux, ion number and ion current decrease from the lightest to the heaviest gas except for trend-breaking higher values for Ar fluence and flux. The energy fluence, energy flux, power flow and damage factors are relatively constant from H2 to N2 but increase for Ne, Ar, Kr and Xe due to radiative cooling and collapse effects. This paper reviews this work and in a concluding section attempts to put the accumulating large amounts of data into the form of a scaling law of beam energy Ebeam versus storage energy E0 taking the form for deuteron as: {Ebeam} = 18.2{E}01.23; where Ebeam is in J and E0 is in kJ. It is hoped that the establishment of such scaling laws places on a firm footing the reference quantitative ideas for plasma focus ion beams.

Effect of 50 MeV Li+3 and 80 MeV C+5 ions' beam irradiation on the optical, structural, chemical and surface topographic properties of PMMA films

NASA Astrophysics Data System (ADS)

Bharti, Madhu Lata; Dutt, Sanjay; Joshi, Veena

2017-10-01

The self-standing films of polymethyl methacrylate (PMMA) were irradiated under vacuum with 50 MeV lithium (Li3+) and 80 MeV carbon (C5+) ions to the fluences of 3 × 1014, 1 × 1015, 1 × 1016 and 1 × 1017 ions µm-2. The pristine and irradiated samples of PMMA films were studied by using ultraviolet-visible (UV-Vis) spectrophotometry, Fourier transform infrared, X-ray diffractrometer and atomic force microscopy. With increasing ion fluence of swift heavy ion (SHI), PMMA suffers degradation, UV-Vis spectra show a shift in the absorption band from the UV towards visible, attributing the formation of the modified system of bonds. Eg and Ea decrease with increasing ion fluence. The size of crystallite and crystallinity percentage decreases with increasing ion fluence. With SHI irradiation, the intensity of IR bands and characteristic bands of different functional groups are found to shift drastically. The change in (Eg) and (N) in carbon cluster is calculated. Shifting of the absorption band from the UV towards visible along with optical activity and as a result of irradiation, some defects are created in the polymer causing the formation of conjugated bonds and carbon clusters in the polymer, which in turn lead to the modification in optical properties that could be useful in the fabrication of optoelectronic devices, gas sensing, electromagnetic shielding and drug delivery.

Electronic excitation induced modifications in elongated iron nanoparticle encapsulated multiwalled carbon nanotubes under ion irradiation

NASA Astrophysics Data System (ADS)

Saikiran, V.; Bazylewski, P.; Sameera, I.; Bhatia, Ravi; Pathak, A. P.; Prasad, V.; Chang, G. S.

2018-05-01

Multi-wall carbon nanotubes (MWCNT) filled with Fe nanorods were shown to have contracted and deformed under heavy ion irradiation. In this study, 120 MeV Ag and 80 MeV Ni ion irradiation was performed to study the deformation and defects induced in iron filled MWCNT under heavy ion irradiation. The structural modifications induced due to electronic excitation by ion irradiation were investigated employing high-resolution transmission electron microscopy, micro-Raman scattering experiments, and synchrotron-based X-ray absorption and emission spectroscopy. We understand that the ion irradiation causes modifications in the Fe nanorods which result in compressions and expansions of the nanotubes, and in turn leads to the buckling of MWCNT. The G band of the Raman spectra shifts slightly towards higher wavenumber and the shoulder G‧ band enhances with the increase of ion irradiation fluence, where the buckling wavelength depends on the radius 'r' of the nanotubes as exp[(r)0.5]. The intensity ratio of the D to G Raman modes initially decreases at the lowest fluence, and then it increases with the increase in ion fluence. The electron diffraction pattern and the high resolution images clearly show the presence of ion induced defects on the walls of the tube and encapsulated iron nanorods.

Interaction between solar energetic particles and interplanetary grains

NASA Astrophysics Data System (ADS)

Strazzulla, G.; Calcagno, L.; Foti, G.; Sheng, K. L.

Some laboratory-studied effects induced by the fluence of fast ions on frosts of astrophysical interest are summarized. The results are applied to the interaction between energetic solar ions and interplanetary dust grains assumed to be cometary debris which spends about one-million yr before being collected in the earth's atmosphere or colliding on the moon's surface. The importance of erosion by particles to the stability of ice grains is confirmed. The build up of carbonaceous material by ion fluence on hydrocarbon containing grains is discussed. It is suggested that these new materials could be the glue which cements submicron silicate particles to form a complex agglomeration whose density increases with increasing proton fluence (packing effect). The IR spectra of laboratory synthesized carbonaceous material are compared with those observed in some carbonaceous meteoritic extracts.

Production of sp3 hybridization by swift heavy ion irradiation of HOPG

NASA Astrophysics Data System (ADS)

Zeng, J.; Zhai, P. F.; Liu, J.; Yao, H. J.; Duan, J. L.; Hou, M. D.; Sun, Y. M.; Li, G. P.

2013-07-01

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by swift heavy ions (86Kr, 209Bi and 238U) with the fluence of 1011-1013 ions/cm2 at room temperature. The production of sp3 hybridization by the irradiation process has been confirmed directly by X-ray photoelectron spectroscopy (XPS). In this work, both irradiated and pristine HOPG samples were investigated by XPS and Raman spectroscopy. The existence of sp3 component is confirmed on the surface of the irradiated HOPG samples. XPS result shows that the acreage ratio Isp3/Isp2 increases with the ion fluence and saturates at a higher value of irradiation. It is found that the amount of hybridization (Isp3/Isp2) strongly depends on the electronic energy loss in the sample. Raman spectra of the irradiated samples show the increasing of acreage ratio ID/IG with the ion fluence, which indicates the change of the atomic structure and the phase transition from sp2 to sp3.

The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gou, J.; Zhang, C. H.; Zhang, L. Q.; Song, Y.; Wang, L. X.; Li, J. J.; Meng, Y. C.; Li, H. X.; Yang, Y. T.; Lu, Z. W.

2014-11-01

The I-V and C-V characteristics of Au/n-GaN Schottky diodes irradiated with 290-MeV 238U32+ ions are presented. The U ions can penetrate the n-type GaN epi-layer with a thickness about 3 μm grown on the c-plane of a sapphire substrate using the MOCVD technique, leaving a purely electronic energy deposition. The Au/n-GaN Schottky diodes were irradiated to successively increasing fluences from 1 × 109 to 5 × 1011 ions cm-2. The measured I-V curves show that the height of the Schottky barrier decreases after irradiation and that the Schottky barrier almost disappears when the ion fluence reaches 5 × 1010 ions cm-2. Meanwhile, the irradiation increases the series resistance. The C-V curves show that the capacitance drops sharply when the ion fluence reaches 5 × 1010 ions cm-2. The dielectric constant also decreases following the irradiation. The changes of the electrical properties are ascribed to the neutralization of the donor-like surface state and the acceptor-like surface state due to the migration of Au atoms at the interface of Au/n-GaN under energetic U ions irradiations.

Purification/annealing of graphene with 100-MeV Ag ion irradiation

PubMed Central

2014-01-01

Studies on interaction of graphene with radiation are important because of nanolithographic processes in graphene-based electronic devices and for space applications. Since the electronic properties of graphene are highly sensitive to the defects and number of layers in graphene sample, it is desirable to develop tools to engineer these two parameters. We report swift heavy ion (SHI) irradiation-induced annealing and purification effects in graphene films, similar to that observed in our studies on fullerenes and carbon nanotubes (CNTs). Raman studies after irradiation with 100-MeV Ag ions (fluences from 3 × 1010 to 1 × 1014 ions/cm2) show that the disorder parameter α, defined by ID/IG ratio, decreases at lower fluences but increases at higher fluences beyond 1 × 1012 ions/cm2. This indicates that SHI induces annealing effects at lower fluences. We also observe that the number of graphene layers is reduced at fluences higher than 1 × 1013 ions/cm2. Using inelastic thermal spike model calculations, we estimate a radius of 2.6 nm for ion track core surrounded by a halo extending up to 11.6 nm. The transient temperature above the melting point in the track core results in damage, whereas lower temperature in the track halo is responsible for annealing. The results suggest that SHI irradiation fluence may be used as one of the tools for defect annealing and manipulation of the number of graphene layers. PACS 60.80.x; 81.05.ue PMID:24636520

Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Sahoo, P. K.; Solanki, V.; Singh, U. B.; Avasthi, D. K.; Mishra, N. C.

2015-12-01

Gold thin films of varying thickness (10-100 nm) grown on silica substrates by e-beam evaporation method were irradiated by 120 MeV Au ions at 3 × 1012 and 1 × 1013 ions cm-2 fluences. Irradiation induced modifications of these films were probed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and surface enhanced Raman scattering (SERS). Irradiation didn't affect the structure, the lattice parameter or the crystallite size, but modified the texturing of grains from [1 1 1] to [2 2 0]. RBS indicated thickness dependent sputtering on irradiation. The sputtering yield was found to decrease with increasing thickness. AFM indicated increase of roughness with increasing irradiation fluence for films of all thickness. In agreement with the AFM observation, the gold nanostructures on the surface of 20 nm thick film were found to increase the SERS signal of acridine orange dye attached to these structures. The SERS peaks were amplified by many fold with increasing ion fluence. The effect of 120 MeV Au ion irradiation on the grain texture, surface morphology and SERS activity in addition to the thickness dependent sputtering in gold thin films are explained by the thermal spike model of ion-matter interaction.

Ripple coarsening on ion beam-eroded surfaces.

PubMed

Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd

2014-01-01

The temporal evolution of ripple pattern on Ge, Si, Al 2 O 3, and SiO 2 by low-energy ion beam erosion with Xe (+) ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 10(17) cm(-2) to 1.3 × 10(19) cm(-2) at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.

Topography evolution of 500 keV Ar(4+) ion beam irradiated InP(100) surfaces - formation of self-organized In-rich nano-dots and scaling laws.

PubMed

Sulania, Indra; Agarwal, Dinesh C; Kumar, Manish; Kumar, Sunil; Kumar, Pravin

2016-07-27

We report the formation of self-organized nano-dots on the surface of InP(100) upon irradiating it with a 500 keV Ar(4+) ion beam. The irradiation was carried out at an angle of 25° with respect to the normal at the surface with 5 different fluences ranging from 1.0 × 10(15) to 1.0 × 10(17) ions per cm(2). The morphology of the ion-irradiated surfaces was examined by atomic force microscopy (AFM) and the formation of the nano-dots on the irradiated surfaces was confirmed. The average size of the nano-dots varied from 44 ± 14 nm to 94 ± 26 nm with increasing ion fluence. As a function of the ion fluence, the variation in the average size of the nano-dots has a great correlation with the surface roughness, which changes drastically up to the ion fluence of 1.0 × 10(16) ions per cm(2) and attains almost a saturation level for further irradiation. The roughness and the growth exponent values deduced from the scaling laws suggest that the kinetic sputtering and the large surface diffusion steps of the atoms are the primary reasons for the formation of the self-organized nanodots on the surface. X-ray photo-electron spectroscopy (XPS) studies show that the surface stoichiometry changes with the ion fluence. With irradiation, the surface becomes more indium (In)-rich owing to the preferential sputtering of the phosphorus atoms (P) and the pure metallic In nano-dots evolve at the highest ion fluence. The cross-sectional scanning electron microscopy (SEM) analysis of the sample irradiated with the highest fluence showed the absence of the nanostructuring beneath the surface. The surface morphological changes at this medium energy ion irradiation are discussed in correlation with the low and high energy experiments to shed more light on the mechanism of the well separated nano-dot formation.

Investigations of spherical Cu NPs in sodium lauryl sulphate with Tb{sup 3+} ions dispersed in PVA films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Brijesh; Kaur, Gagandeep, E-mail: gagandeep_bhu@yahoo.com; Rai, S.B., E-mail: sbrai49@yahoo.co.in

2016-03-15

Highlights: • Cu NPs were prepared in SDS using 1064 nm laser radiation at fluence 37, 64 and 88 J/cm{sup 2}. • Spherical Cu NPs with average diameter varying between 10 and 50 nm atdifferent fluence. • PL of Tb3+ ions in PVA polymer film is maximum with Cu NPS at fluence 37 J/cm{sup 2}. • PVA films of Cu NPs displayed a highly temperature-dependent electrical conductivity. • These copper NPs embedded PVA films can be used as novel, low-cost sensor materials. - Abstract: Cu nanoparticles (NPs) have been prepared in SDS solution using 1064 nm laser radiation at differentmore » fluence 37 J/cm{sup 2}, 64 J/cm{sup 2} and 88 J/cm{sup 2} and structurally characterized. The TEM measurements reveal the presence of nanoparticles of spherical shape with different size. The size of the nanoparticles and their concentration increases with the increase of fluence.The effect of these Cu nanoparticles on the emissive properties of Tb{sup 3+} ion in polymer films has been studied. It is found that emission intensity of Tb{sup 3+} first increases and then deceases both with concentration of Cu NPs as well as with sizes. The PL intensity of Tb{sup 3+} ions is minimum for Cu NPs prepared with highest fluence. It has been explained in term of local field effect. This was also verified by life time measurements. These thin PVA films of copper nanoparticles displayed a highly temperature-dependent electrical conductivity with sensitivity at least comparable to commercial materials which suggest the use of these copper NPs embedded PVA films as novel, low-cost sensor materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com; Agarwal, Avinash; Saxena, Nupur

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra usingmore » two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ{sub a}/Γ{sub b}) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Sarla; Vijay, Y. K.; Vyas, Rishi

The influence of swift heavy ion (SHI) irradiation on structural and photoluminescence (PL) properties of ZnO-PMMA nanocomposite films, prepared by solution casting method, was studied. The ZnO-PMMA nanocomposite films were irradiated using 120 MeV Ag{sup +12} ions at different fluences varying from 1 Multiplication-Sign 10{sup 11} to 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. The intensity of the X-ray diffraction peaks is increased at the high fluence, without evolution of any new peak. A shift in absorption edge (i.e. shift in optical band gap) towards higher wavelength was observed after irradiation and PL from ZnO-PMMA nanocomposite films is found to increasemore » up to a critical fluence and then found to be suppressed for higher fluence (1 Multiplication-Sign 10{sup 12} ion/cm{sup 2}). The change in photoluminescence after irradiation can be attributed to the change in microstructure of PMMA matrix as well as the agglomeration of ZnO nanoparticles.« less

Effect of 100 MeV Ag+7 ion irradiation on the bulk and surface magnetic properties of Co-Fe-Si thin films

NASA Astrophysics Data System (ADS)

Hysen, T.; Geetha, P.; Al-Harthi, Salim; Al-Omari, I. A.; Lisha, R.; Ramanujan, R. V.; Sakthikumar, D.; Avasthi, D. K.; Anantharaman, M. R.

2014-12-01

Thin films of Co-Fe-Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag+7 ions at fluences of 1×1011, 1×1012 and 1×1013 ions/cm2. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag7+ ions modifies the surface morphology. Irradiating with ions at fluences of 1×1011 ions/cm2 smoothens the mesoscopic hill-like structures, and then, at 1×1012 ions/cm2 new surface structures are created. When the fluence is further increased to 1×1013 ions/cm2 an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×1011 ions/cm2, 1×1012 ions/cm2 and 1×1013 ions/cm2 the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation.

Platelet adhesion and plasma protein adsorption control of collagen surfaces by He + ion implantation

NASA Astrophysics Data System (ADS)

Kurotobi, K.; Suzuki, Y.; Nakajima, H.; Suzuki, H.; Iwaki, M.

2003-05-01

He + ion implanted collagen-coated tubes with a fluence of 1 × 10 14 ions/cm 2 were exhibited antithrombogenicity. To investigate the mechanisms of antithrombogenicity of these samples, plasma protein adsorption assay and platelet adhesion experiments were performed. The adsorption of fibrinogen (Fg) and von Willebrand factor (vWf) was minimum on the He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2. Platelet adhesion (using platelet rich plasma) was inhibited on the He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and was accelerated on the untreated collagen and ion implanted collagen with fluences of 1 × 10 13, 1 × 10 15 and 1 × 10 16 ions/cm 2. Platelet activation with washed platelets was observed on untreated collagen and He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and was inhibited with fluences of 1 × 10 13, 1 × 10 15 and 1 × 10 16 ions/cm 2. Generally, platelets can react with a specific ligand inside the collagen (GFOGER sequence). The results of platelets adhesion experiments using washed platelets indicated that there were no ligands such as GFOGER on the He + ion implanted collagen over a fluence of 1 × 10 13 ions/cm 2. On the 1 × 10 14 ions/cm 2 implanted collagen, no platelet activation was observed due to the influence of plasma proteins. From the above, it is concluded that the decrease of adsorbed Fg and vWf caused the antithrombogenicity of He + ion implanted collagen with a fluence of 1 × 10 14 ions/cm 2 and that plasma protein adsorption took an important role repairing the graft surface.

Selective Improvement of NO2 Gas Sensing Behavior in SnO2 Nanowires by Ion-Beam Irradiation.

PubMed

Kwon, Yong Jung; Kang, Sung Yong; Wu, Ping; Peng, Yuan; Kim, Sang Sub; Kim, Hyoun Woo

2016-06-01

We irradiated SnO2 nanowires with He ions (45 MeV) with different ion fluences. Structure and morphology of the SnO2 nanowires did not undergo noticeable changes upon ion-beam irradiation. Chemical equilibrium in SnO2/gas systems was calculated from thermodynamic principles, which were used to study the sensing selectivity of the tested gases, demonstrating the selective sensitivity of the SnO2 surface to NO2 gas. Being different from other gases, including H2, ethanol, acetone, SO2, and NH3, the sensor response to NO2 gas significantly increases as the ion fluence increases, showing a maximum under an ion fluence of 1 × 10(16) ions/cm(2). Photoluminescence analysis shows that the relative intensity of the peak at 2.1 eV to the peak at 2.5 eV increases upon ion-beam irradiation, suggesting that structural defects and/or tin interstitials have been generated. X-ray photoelectron spectroscopy indicated that the ionic ratio of Sn(2+/)Sn(4+) increases by the ion-beam irradiation, supporting the formation of surface Sn interstitials. Using thermodynamic calculations, we explained the observed selective sensing behavior. A molecular level model was also established for the adsorption of NO2 on ion-irradiated SnO2 (110) surfaces. We propose that the adsorption of NO2-related species is considerably enhanced by the generation of surface defects that are comprised of Sn interstitials.

Ion beam induced amorphization and bond breaking in Zn2SiO4:Eu3+ nanocrystalline phosphor.

PubMed

Sunitha, D V; Nagabhushana, H; Singh, Fouran; Sharma, S C; Dhananjaya, N; Nagabhushana, B M; Chakradhar, R P S

2012-05-01

This paper reports on the ionoluminescence (IL) of Zn(2)SiO(4):Eu(3+) nanophosphors bombarded with 100 MeV Si(7+) ions with fluences in the range (3.91-21.48)×10(12) ions cm(-2). The prominent IL emission peaks recorded at 580, 590, 612, 650 and 705 nm are attributed to the luminescence centers activated by Eu(3+) ions. It is observed that IL intensity decreases and saturates with increase of Si(7+) ion fluence. Fourier transform infrared (FT-IR) studies confirm surface/bulk amorphization for a fluence of (3.91-21.48)×10(13) ions cm(-2). These results show degradation of SiO (2ν(3)) bonds present on the surface of the sample and/or due to lattice disorder produced by dense electronic excitation under heavy ion irradiation. These results are discussed in detail. Copyright © 2011 Elsevier B.V. All rights reserved.

Surface topographical and structural analysis of Ag+-implanted polymethylmethacrylate

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Naab, Fabian; Toader, Ovidiu; Sagheer, Riffat; Bashir, Shazia; Zia, Rehana; Siraj, Khurram; Iqbal, Saman

2016-08-01

Specimens of polymethylmethacrylate (PMMA) were implanted with 400-keV Ag+ ions at different ion fluences ranging from 1 × 1014 to 5 × 1015 ions/cm2 using a 400-kV NEC ion implanter. The surface topographical features of the implanted PMMA were investigated by a confocal microscope. Modifications in the structural properties of the implanted specimens were analyzed in comparison with pristine PMMA by X-ray diffraction (XRD) and Raman spectroscopy. UV-Visible spectroscopy was applied to determine the effects of ion implantation on optical transmittance of the implanted PMMA. The confocal microscopic images revealed the formation of hillock-like microstructures along the ion track on the implanted PMMA surface. The increase in ion fluence led to more nucleation of hillocks. The XRD pattern confirmed the amorphous nature of pristine and implanted PMMA, while the Raman studies justified the transformation of Ag+-implanted PMMA into amorphous carbon at the ion fluence of ⩾5 × 1014 ions/cm2. Moreover, the decrease in optical transmittance of PMMA is associated with the formation of hillocks and ion-induced structural modifications after implantation.

Effect of structural transformation of C+-ion implanted PMMA into quasi-continuous carbonaceous layer on its optical and electrical properties

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Sagheer, Riffat

2018-02-01

The samples of Polymethylmethacrylate (PMMA) have been implanted with 500 keV C+-ions at different ion fluences ranging from 9.3 × 1013 to 8.4 × 1014 ions/cm2. The structural modifications are examined by Fourier Transform Infrared and Raman spectral studies. For the investigation of optical, electrical and surface morphological properties of implanted samples UV-Visible spectrometer, four probe apparatus and optical microscope have been employed. The FTIR spectra confirmed the cleavage of chemicals bonds as a consequence of polymer chain scission, whereas, Raman studies revealed the transformation of PMMA structure into quasi-continuous amorphous carbon with increasing ion fluences. A continuous reduction has been observed in the optical band gap of PMMA from 3.16 to 1.42 eV. Moreover, the refractive index, extinction coefficient and electrical conductivity of implanted PMMA are found to be an increasing function of the ion fluence. The micrographic images revealed the signatures of ion-induced defects like cracking, dehydrogenation, stress and swelling on the surface of PMMA. These implanted samples have a potential to be used in the field of optical communications and thin plastic flexible electronics.

Nano-scale phase transformation in Ti-implanted austenitic 301 stainless steel.

PubMed

Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Kinoshita, Hiroshi; Takahashi, Heishichiro

2003-01-01

Phase-transformation behaviours were investigated for austenitic 301 stainless steel during implantation at room temperature with 300 keV Ti ions to fluences of 8 x 10(19) to approximately 3 x 10(21) ions m(-2) by means of transmission electron microscopy. The cross-sectional specimen was prepared using a focused ion beam. Plan observation of the implanted specimen showed that phase transformation from gamma-phase to alpha-phase was induced by implantation to a fluence of 3 x 10(20) Ti ions m(-2). The nucleation of the irradiation (implantation)-induced phase increased with the increase of the dose. The orientation relationship between the gamma matrix and the induced alpha martensitic phase was identified as (011)alpha//(111)gamma and [11-1]alpha//[10-1], close to the Kurdjumov-Sachs relationship. Cross-sectional observation after implantation to a fluence of 5 x 10(20) ions m(-2) showed that phase transformation mostly nucleated near the surface and occurred in the higher the concentration gradient of the implanted ion, i.e. a higher stress concentration takes place and this stress introduced by the implanted ions acts as a driving force for the transformation.

Nanoindentation of ion-irradiated reactor pressure vessel steels - model-based interpretation and comparison with neutron irradiation

NASA Astrophysics Data System (ADS)

Röder, F.; Heintze, C.; Pecko, S.; Akhmadaliev, S.; Bergner, F.; Ulbricht, A.; Altstadt, E.

2018-04-01

Ion-irradiation-induced hardening is investigated on six selected reactor pressure vessel (RPV) steels. The steels were irradiated with 5 MeV Fe2+ ions at fluences ranging from 0.01 to 1.0 displacements per atom (dpa) and the induced hardening of the surface layer was probed with nanoindentation. To separate the indentation size effect and the substrate effect from the irradiation-induced hardness profile, we developed an analytic model with the plastic zone of the indentation approximated as a half sphere. This model allows the actual hardness profile to be retrieved and the measured hardness increase to be assigned to the respective fluence. The obtained values of hardness increase vs. fluence are compared for selected pairs of samples in order to extract effects of the RPV steel composition. We identify hardening effects due to increased levels of copper, manganese-nickel and phosphorous. Further comparison with available neutron-irradiated conditions of the same heats of RPV steels indicates pronounced differences of the considered effects of composition for irradiation with neutrons vs. ions.

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

NASA Astrophysics Data System (ADS)

Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

2012-07-01

Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Understanding self ion damage in FCC Ni-Cr-Fe based alloy using X-ray diffraction techniques

NASA Astrophysics Data System (ADS)

Halder Banerjee, R.; Sengupta, P.; Chatterjee, A.; Mishra, S. C.; Bhukta, A.; Satyam, P. V.; Samajdar, I.; Dey, G. K.

2018-04-01

Using X-ray diffraction line profile analysis (XRDLPA) approach the radiation response of FCC Ni-Cr-Fe based alloy 690 to 1.5 and 3 MeV Ni2+ ion damage was quantified in terms of its microstructural parameters. These microstructural parameters viz. average domain size, microstrain and dislocation density were found to vary anisotropically with fluence. The anisotropic behaviour is mainly attributable to presence of twins in pre-irradiated microstructure. After irradiation, surface roughness increases as a function of fluence attributable to change in surface and sub-surface morphology caused by displacement cascade, defects and sputtered atoms created by incident energetic ion. The radiation hardening in case of 1.5 MeV Ni2+ irradiated specimens too is a consequence of the increase in dislocation density formed by interaction of radiation induced defects with pre-existing dislocations. At highest fluence there is an initiation of saturation.

Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Šiljegović, M.; Bibić, N.

2012-05-01

This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 keV Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (1 0 0) substrates. The TiN films were deposited at the substrate temperature of 150 °C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 × 1015 and 2 × 1016 ions/cm2. The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 × 1016 ions/cm2. It is also observed that the mean crystallite size decreases with the increasing ion fluence.

A study on 100 MeV O7+ irradiated SnO2/Ag/SnO2 multilayer as transparent electrode for flat panel display application

NASA Astrophysics Data System (ADS)

Sharma, Vikas; Singh, Satyavir; Asokan, K.; Sachdev, Kanupriya

2016-07-01

The multilayer thin films of SnO2/Ag/SnO2 were deposited using electron-beam and thermal evaporation for flat panel display application. The as-prepared SnO2/Ag/SnO2 specimen was irradiated with 100 MeV O7+ ions by varying the fluences 1 × 1012 and 5 × 1012 ions/cm2. The pristine and irradiated films were investigated using XRD, SEM, AFM and Raman to find out modification in the structure and surface morphology of the films. UV-Vis and Hall measurement techniques were used to investigate the optical and electrical properties respectively. It was observed that the roughness of the film after irradiation (for the fluence of 1 × 1012 ions/cm2) ​ decreased to 0.68 nm from 1.6 nm and showed an increase in roughness to 1.35 nm on increasing the fluence to 5 × 1012 ions/cm2. This oxide/metal/oxide structure fulfills the basic requirements of a TCE, like high-transmittance >75% for pristine and >80% for the fluence of 1 × 1012 ions/cm2 over a broad spectrum of visible light for practical applications. The multilayer structure shows change in the electrical resistivity from 1.6 × 10-3 Ω cm to 6.3 × 10-3 Ω cm after irradiation.

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in; Kanjilal, A.

2014-07-21

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used inmore » our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.« less

Structural evolution of zirconium carbide under ion irradiation

NASA Astrophysics Data System (ADS)

Gosset, D.; Dollé, M.; Simeone, D.; Baldinozzi, G.; Thomé, L.

2008-02-01

Zirconium carbide is one of the candidate materials to be used for some fuel components of the high temperature nuclear reactors planned in the frame of the Gen-IV project. Few data exist regarding its behaviour under irradiation. We have irradiated ZrC samples at room temperature with slow heavy ions (4 MeV Au, fluence from 10 11 to 5 × 10 15 cm -2) in order to simulate neutron irradiations. Grazing incidence X-Ray diffraction (GIXRD) and transmission electron microscopy (TEM) analysis have been performed in order to study the microstructural evolution of the material versus ion fluence. A high sensitivity to oxidation is observed with the formation of zirconia precipitates during the ion irradiations. Three damage stages are observed. At low fluence (<10 12 cm -2), low modifications are observed. At intermediate fluence, high micro-strains appear together with small faulted dislocation loops. At the highest fluence (>10 14 cm -2), the micro-strains saturate and the loops coalesce to form a dense dislocation network. No other structural modification is observed. The material shows a moderate cell parameter increase, corresponding to a 0.6 vol.% swelling, which saturates around 10 14 ions/cm 2, i.e., a few Zr dpa. As a result, in spite of a strong covalent bonding component, ZrC seems to have a behaviour under irradiation close to cubic metals.

Oxygen ion irradiation effect on corrosion behavior of titanium in nitric acid medium

NASA Astrophysics Data System (ADS)

Ningshen, S.; Kamachi Mudali, U.; Mukherjee, P.; Barat, P.; Raj, Baldev

2011-01-01

The corrosion assessment and surface layer properties after O 5+ ion irradiation of commercially pure titanium (CP-Ti) has been studied in 11.5 N HNO 3. CP-Ti specimen was irradiated at different fluences of 1 × 10 13, 1 × 10 14 and 1 × 10 15 ions/cm 2 below 313 K, using 116 MeV O 5+ ions source. The corrosion resistance and surface layer were evaluated by using potentiodynamic polarization, electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM) and glancing-angle X-ray diffraction (GXRD) methods. The potentiodynamic anodic polarization results of CP-Ti revealed that increased in ion fluence (1 × 10 13-1 × 10 15 ions/cm 2) resulted in increased passive current density due to higher anodic dissolution. SEM micrographs and GXRD analysis corroborated these results showing irradiation damage after corrosion test and modified oxide layer by O 5+ ion irradiation was observed. The EIS studies revealed that the stability and passive film resistance varied depending on the fluence of ion irradiation. The GXRD patterns of O 5+ ion irradiated CP-Ti revealed the oxides formed are mostly TiO 2, Ti 2O 3 and TiO. In this paper, the effects of O 5+ ion irradiation on material integrity and corrosion behavior of CP-Ti in nitric acid are described.

XAS and XMCD studies of magnetic properties modifications of Pt/Co/Au and Pt/Co/Pt trilayers induced by Ga⁺ ions irradiation.

PubMed

Mazalski, Piotr; Sveklo, Iosif; Kurant, Zbigniew; Ollefs, Katharina; Rogalev, Andrei; Wilhelm, Fabrice; Fassbender, Juergen; Baczewski, Lech Tomasz; Wawro, Andrzej; Maziewski, Andrzej

2015-05-01

Magnetic and magneto-optical properties of Pt/Co/Au and Pt/Co/Pt trilayers subjected to 30 keV Ga(+) ion irradiation are compared. In two-dimensional maps of these properties as a function of cobalt thickness and ion fluence, two branches with perpendicular magnetic anisotropy (PMA) for Pt/Co/Pt trilayers are well distinguished. The replacement of the Pt capping layer with Au results in the two branches still being visible but the in-plane anisotropy for the low-fluence branch is suppressed whereas the high-fluence branch displays PMA. The X-ray absorption spectra and X-ray magnetic circular dichroism (XMCD) spectra are discussed and compared with non-irradiated reference samples. The changes of their shapes and peak amplitude, particularly for the high-fluence branch, are related to the modifications of the local environment of Co(Pt) atoms and the etching effects induced by ion irradiation. Additionally, in irradiated trilayers the XMCD measurements at the Pt L2,3-edge reveal an increase of the magnetic moment induced in Pt atoms.

Resistive switching behavior in oxygen ion irradiated TiO2-x films

NASA Astrophysics Data System (ADS)

Barman, A.; Saini, C. P.; Sarkar, P. K.; Bhattacharjee, G.; Bhattacharya, G.; Srivastava, S.; Satpati, B.; Kanjilal, D.; Ghosh, S. K.; Dhar, S.; Kanjilal, A.

2018-02-01

The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO2-x layers at an ion fluence of 5  ×  1016 ions cm-2 is reported. A clear transformation from columnar to layered polycrystalline films is revealed by transmission electron microscopy with increasing ion fluence, while the complementary electron energy loss spectroscopy suggests an evolution of oxygen vacancy (OV) in TiO2-x matrix. This is further verified by determining electron density with the help of x-ray reflectivity. Both local and device current-voltage measurements illustrate that the ion-beam induced OVs play a key role in bistable resistive switching mechanism.

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

NASA Astrophysics Data System (ADS)

Jadhav, Vidya

2015-09-01

Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam

NASA Astrophysics Data System (ADS)

Dev, B. N.; Banu, Nasrin; Fassbender, J.; Grenzer, J.; Schell, N.; Bischoff, L.; Groetzschel, R.; McCord, J.

2017-10-01

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(15 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 µm wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favour an alignment of magnetization parallel to the stripe axis, the opposite behaviour is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behaviour.

He ion irradiation effects on multiwalled carbon nanotubes structure

NASA Astrophysics Data System (ADS)

Elsehly, Emad M.; Chechenin, Nikolay G.; Makunin, Alexey V.; Shemukhin, Andrey A.; Motaweh, Hussien A.

2017-03-01

Samples of multi-walled carbon nanotubes (MWNTs) were irradiated with 80 keV He ions. Scanning electron microscopy (SEM) inspection showed that the average outer diameters of the tube decreased as a result of ion irradiation. The samples were also characterized using Raman spectrometry by analysis of the intensity of main bands in the spectra of virgin and irradiated MWNT samples. Modifications of the disorder mode (D-band) and the tangential mode (G-band) were studied as a function of irradiation fluences. Raman spectra showed that as the fluence increases, the MWNTs first show disorder due to the produced defects, and then amorphization under still higher fluence of ion irradiation. Thermal and athermal mechanisms of the radiation induced MWNTs modifications are discussed. Contribution to the Topical Issue "Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces", edited by A.N. Grum-Grzhimailo, E.V. Gryzlova, Yu V. Popov, and A.V. Solov'yov.

High-resolution fluence verification for treatment plan specific QA in ion beam radiotherapy

NASA Astrophysics Data System (ADS)

Martišíková, Mária; Brons, Stephan; Hesse, Bernd M.; Jäkel, Oliver

2013-03-01

Ion beam radiotherapy exploits the finite range of ion beams and the increased dose deposition of ions toward the end of their range in material. This results in high dose conformation to the target region, which can be further increased using scanning ion beams. The standard method for patient-plan verification in ion beam therapy is ionization chamber dosimetry. The spatial resolution of this method is given by the distance between the chambers (typically 1 cm). However, steep dose gradients created by scanning ion beams call for more information and improved spatial resolution. Here we propose a clinically applicable method, supplementary to standard patient-plan verification. It is based on ion fluence measurements in the entrance region with high spatial resolution in the plane perpendicular to the beam, separately for each energy slice. In this paper the usability of the RID256 L amorphous silicon flat-panel detector for the measurements proposed is demonstrated for carbon ion beams. The detector provides sufficient spatial resolution for this kind of measurement (pixel pitch 0.8 mm). The experiments were performed at the Heidelberg Ion-Beam Therapy Center in Germany. This facility is equipped with a synchrotron capable of accelerating ions from protons up to oxygen to energies between 48 and 430 MeV u-1. Beam application is based on beam scanning technology. The measured signal corresponding to single energy slices was translated to ion fluence on a pixel-by-pixel basis, using calibration, which is dependent on energy and ion type. To quantify the agreement of the fluence distributions measured with those planned, a gamma-index criterion was used. In the patient field investigated excellent agreement was found between the two distributions. At least 95% of the slices contained more than 96% of points agreeing with our criteria. Due to the high spatial resolution, this method is especially valuable for measurements of strongly inhomogeneous fluence distributions like those in intensity-modulated treatment plans or plans including dose painting. Since no water phantom is needed to perform measurements, the flat-panel detector investigated has high potential for use with gantries. Before the method can be used in the clinical routine, it has to be sufficiently tested for each detector-facility combination.

Swift heavy ion irradiation effects on structural, optical properties and ac conductivity of polypyrrole nanofibers

NASA Astrophysics Data System (ADS)

Hazarika, J.; Kumar, A.

2016-12-01

Polypyrrole (PPy) nanofibers have been synthesized by interfacial polymerization method and irradiated with 160 MeV Ni12+ ions under vacuum with fluences in the range of 1010-1012 ions/cm2. High-resolution transmission electron microscopy results show that upon swift heavy ion (SHI) irradiation the PPy nanofibers become denser. The crystallinity of PPy nanofibers increases upon SHI irradiation, while their d-spacing decreases. Upon SHI irradiation, the polaron absorption band gets red-shifted indicating reduction in the optical band gap energy of the irradiated PPy nanofibers. The indirect optical band gap energy is decreased as compared to corresponding direct optical band gap energy. The number of carbon atoms per conjugation length (N) and carbon atoms per cluster (M) of the SHI-irradiated PPy nanofibers increase with increasing the irradiation fluence. Fourier transform infrared spectra reveal the enhancement in intensity of some characteristic vibration bands upon SHI irradiation. The thermal stability of the PPy nanofibers is enhanced on SHI irradiation. The charge carriers in both pristine and irradiated PPy nanofibers follow the correlated barrier hopping mechanism. Scaling of ac conductivity reveals that the conduction mechanism is independent of the SHI irradiation fluence.

Photoluminescence and reflectivity of polymethylmethacrylate implanted by low-energy carbon ions at high fluences

NASA Astrophysics Data System (ADS)

Wang, Jun; Zhu, Fei; Zhang, Bei; Liu, Huixian; Jia, Guangyi; Liu, Changlong

2012-11-01

Polymethylmethacrylate (PMMA) specimens were implanted with 30 keV carbon ions in a fluence range of 1 × 1016 to 2 × 1017 cm-2, and photoluminescence (PL) and reflectivity of the implanted samples were examined. A luminescent band with one peak was found in PL spectra excited by 480 nm line, but its intensity did not vary in parallel with ion fluence. The strongest PL occurred at the fluence of 5 × 1016 cm-2. Results from visible-light-excited micro-Raman spectra indicated that the formation of hydrogenated amorphous carbon structures in subsurface layer and their evolutions with ion fluence could be responsible for the observed PL responses. Measurements of the small-angle reflectance spectra from both the implanted and rear surfaces of samples in the ultraviolet-visible (UV-vis) range demonstrated a kind of both fluence-dependent and wavelength-related reflectivity variations, which were attributed to the structural changes induced by ion implantation. A noticeable reflectivity modification, which may be practically used, could be found at the fluence of 1 × 1016 cm-2.

Low-loss and tunable near-zero-epsilon titanium nitride

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Schmidt, E.; Schöppe, P.; Bibić, N.; Ronning, C.; Rakočević, Z.

2017-10-01

Titanium nitride (TiN) has emerged as alternative plasmonic material in the visible and near-infrared spectral range due to its metallic properties. We studied the influence of silver ion implantation (fluence range from 0.5 × 1016-6 × 1016 ions/cm2) on the structural and optical properties of reactively sputtered 260 nm thick TiN films. The columnar structure was partially destroyed by the irradiation and up to 5 at.% of Ag was incorporated into the films within the projected ion range. The formation of cubic Ag nanoparticles with size of 1-2 nm was observed by high resolution transmission electron microscopy and subsequent fast Fourier transform analysis. This presence of Ag within the TiN matrix drastically changes both the real and imaginary component of the dielectric function and provides low optical losses. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the silver influence on the optical behavior of TiN. With increasing ion fluence, the unscreened plasma frequency decreased and broadening increased. The energy, strength and broadening of the interband transitions were studied with respect to the silver ion fluence and correlated with the microstructural changes induced in TiN films.

Spectroscopic ellipsometry study of N+ ion-implanted ethylene-norbornene films

NASA Astrophysics Data System (ADS)

Šiljegović, M.; Kačarević-Popović, Z. M.; Stchakovsky, M.; Radosavljević, A. N.; Korica, S.; Novaković, M.; Popović, M.

2014-05-01

The optical properties of 150 keV N+ implanted ethylene-norbornene (TOPAS 6017S-04) copolymer were investigated using phase modulated spectroscopic ellipsometry (PMSE) and ultraviolet-visible (UV-Vis) spectroscopy in the ranges of 0.6-6.5 eV and of 1.5-6.2 eV, respectively. The single-effective-oscillator model was used to fit the calculated data to the experimental ellipsometric spectra. The results show that the oscillator and dispersion energies decrease with increasing ion fluence up to 1015 cm-2, and then these parameters increase with further fluence increasing. Analysis of the UV-Vis absorption spectra revealed the presence of indirect electronic transitions with the band gap energy in the range of 1.3 to 2.8 eV. It was found that both the band gap energy and the energy width of the distribution of localized band tail states decrease, while the values of Tauc coefficient increase with increasing the ion fluence. From the ellipsometric data we found that the real part of the dielectric function increased about 7% after irradiation with 1015 cm-2, and decreased about 10% in samples modified with 1016 cm-2.

Amorphization of Ta2O5 under swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Cusick, Alex B.; Lang, Maik; Zhang, Fuxiang; Sun, Kai; Li, Weixing; Kluth, Patrick; Trautmann, Christina; Ewing, Rodney C.

2017-09-01

Crystalline Ta2O5 powder is shown to amorphize under 2.2 GeV 197Au ion irradiation. Synchrotron X-ray diffraction (XRD), Raman spectroscopy, small-angle X-ray scattering (SAXS), and transmission electron microscopy (TEM) were used to characterize the structural transition from crystalline to fully-amorphous. Based on Rietveld refinement of XRD data, the initial structure is orthorhombic (P2mm) with a very large unit cell (a = 6.20, b = 40.29, c = 3.89 Å; V = 971.7 Å3), ideally containing 22 Ta and 55 O atoms. At a fluence of approximately 3 × 1011 ions/cm2, a diffuse amorphous background becomes evident, increasing in intensity relative to diffraction maxima until full amorphization is achieved at approximately 3 × 1012 ions/cm2. An anisotropic distortion of the orthorhombic structure occurred during the amorphization process, with an approximately constant unit cell volume. The amorphous phase fraction as a function of fluence was determined, yielding a trend that is consistent with a direct-impact model for amorphization. SAXS and TEM data indicate that ion tracks exhibit a core-shell morphology. Raman data show that the amorphous phase is comprised of TaO6 and TaO5 coordination-polyhedra in contrast to the TaO6 and TaO7 units that exist in crystalline Ta2O5. Analysis of Raman data shows that oxygen-deficiency increases with fluence, indicating a loss of oxygen that leads to an estimated final stoichiometry of Ta2O4.2 at a fluence of 1 × 1013 ions/cm2.

Effect of silver ion-induced disorder on morphological, chemical and optical properties of poly (methyl methacrylate)

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Saleemi, Farhat; Rafique, M. Shahid; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Aziz, Uzma

2016-11-01

Ion implantation is a versatile technique to tailor the surface properties of polymers in a controlled manner. In the present study, samples of poly (methyl methacrylate) (PMMA) have been implanted with 400 keV silver (Ag+) ion beam to various ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The effect of Ag+ ion-induced disorder on morphological, chemical and optical properties of PMMA is analyzed using Atomic Force Microscope (AFM), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible (UV-Vis) spectroscopy. Furthermore, the electrical conductivity of pristine and implanted PMMA is measured using four probe apparatus. The AFM images revealed the growth of nano-sized grainy structures and hillocks above the surface of implanted PMMA. The FTIR spectra confirmed the modifications in chemical structure of PMMA along with the formation of sbnd Cdbnd Csbnd carbon contents. The refractive index, extinction coefficient and photoconductivity of implanted PMMA have been found to increase as a function of ion fluence. Simultaneously, indirect optical band gap is reduced from 3.13 to 0.81 eV at a relatively high fluence (5 × 1015 ions/cm2). A linear correlation has been established between the band gap and Urbach energies. Moreover, the electrical conductivity of Ag+ implanted PMMA has increased from 2.14 × 10-10 (pristine) to 9.6 × 10-6 S/cm.

Effect of 100 MeV swift Si8+ ions on structural and thermoluminescence properties of Y2O3:Dy3+nanophosphor

NASA Astrophysics Data System (ADS)

Shivaramu, N. J.; Lakshminarasappa, B. N.; Nagabhushana, K. R.; Singh, Fouran

2016-05-01

Nanoparticles of Y2O3:Dy3+ were prepared by the solution combustion method. The X-ray diffraction pattern of the 900°C annealed sample shows a cubic structure and the average crystallite size was found to be 31.49 nm. The field emission scanning electron microscopy image of the 900°C annealed sample shows well-separated spherical shape particles and the average particle size is found to be in a range 40 nm. Pellets of Y2O3:Dy3+ were irradiated with 100 MeV swift Si8+ ions for the fluence range of 3 × 1011_3 × 1013 ions cm-2. Pristine Y2O3:Dy3+ shows seven Raman modes with peaks at 129, 160, 330, 376, 434, 467 and 590 cm-1. The intensity of these modes decreases with an increase in ion fluence. A well-resolved thermoluminescence glow with peaks at ∼414 K (Tm1) and ∼614 K (Tm2) were observed in Si8+ ion-irradiated samples. It is found that glow peak intensity at 414 K increases with an increase in the dopant concentration up to 0.6 mol% and then decreases with an increase in dopant concentration. The high-temperature glow peak (614 K) intensity linearly increases with an increase in ion fluence. The broad TL glow curves were deconvoluted using the glow curve deconvoluted method and kinetic parameters were calculated using the general order kinetic equation.

Effects of ion irradiation on the surface mechanical behavior of hybrid sol-gel derived silicate thin films

NASA Astrophysics Data System (ADS)

Ghisleni, Rudy

A study on the effects of ion irradiation on the surface mechanical behavior of hybrid sol-gel derived thin films has been performed. Hybrid organic/inorganic modified silicate thin films were synthesized by sol-gel processing from tetraethoxysilane (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto (100) Si substrates. The synthesized films were investigated by nanoindentation, photoluminescence spectroscopy, and Raman spectroscopy. Hybrid TEOS/MTES sol-gel films modified by ion irradiation with deposited electronic energies of 1.87 x 1025 eV/cm3 or higher showed higher values of reduced elastic modulus and hardness than 800°C heat treated films. Thus, ion irradiation was found to be an effective means in converting the polymer sol into ceramic type coatings. The ions used in this study were Cu2+, N2+, Si+, O+, N+, He+, and H+, with incident energies ranging from 100 keV to 2 MeV, and fluences ranging from 1 x 1014 to 1 x 1017 ions/cm2. Both the reduced elastic modulus and hardness were seen to increase monotonically with the increase in ion fluence, with an observed maximum hardness of 7.7 GPa (an unirradiated film hardness was 0.4 GPa) and a maximum reduced elastic modulus of 84.0 GPa (an unirradiated film reduced elastic modulus was 7.1 GPa) for 250 keV N2+ irradiation with a 5 x 1016 ions/cm2 fluence. The electronic stopping power was found to be principally responsible for the film hardening, while the role of nuclear stopping power was minimal. A monotonic increase in hardness with increase in electronic energy deposited to the film surface was found. A model describing the hardening of ion irradiated films was developed. This model characterizes the hardening effectiveness of the ion species considered by two parameters: the constant hardening cross-section and the hardening coefficient. Where the hardening cross-section represents the cross-sectional area hardened by the interaction of an incident ion with the target, and the hardening coefficient represents an index of the cross-sectional area gradient as a function of fluence. The increase in hardness of hybrid sol-gel films following ion irradiation was linked to structural changes. Ion irradiation results in a cross-linked silica film as well as the segregation of amorphous carbon clusters, both of which contributed to increase the mechanical properties of the films.

H+-induced irradiation damage resistance in Fe- and Ni-based metallic glass

NASA Astrophysics Data System (ADS)

Zhang, Hongran; Mei, Xianxiu; Zhang, Xiaonan; Li, Xiaona; Wang, Yingmin; Sun, Jianrong; Wang, Younian

2016-05-01

In this study, use of 40-keV H+ ion for irradiating metallic glass Fe80Si7.43B12.57 and Ni62Ta38 as well as metallic tungsten (W) at fluences of 1 × 1018 and 3 × 1018 ions/cm2, respectively, was investigated. At the fluence of 1 × 1018 ions/cm2, a crystalline layer appeared in metallic glass Fe80Si7.43B12.57, with α-Fe as the major crystalline phase, coupled with a little Fe2B, Fe3B, and metastable β-Mn-type phase. Fe80Si7.43B12.57 exhibited good soft magnetic properties after irradiation. At the fluence of 3 × 1018 ions/cm2, Ni62Ta38 was found to be amorphous-based, with a little μ-NiTa and Ni3Ta phases. No significant irradiation damage phenomenon appeared in metallic glasses Fe80Si7.43B12.57 and Ni62Ta38. Blistering, flaking, and other damage occurred on the surface of metallic W, and the root-mean-square (RMS) roughness increased with the increase of fluence. Metallic glass Ni62Ta38 exhibited better resistance to H+ irradiation than Fe80Si7.43B12.57, both of which were superior to the metallic W.

A TLD-based few-channel spectrometer for mixed photon, electron, and ion fields with high fluence rates.

PubMed

Behrens, R; Ambrosi, P

2002-01-01

A few-channel spectrometer for mixed photon, electron and ion radiation fields has been developed. It consists of a front layer of an etched-track detector foil for detecting protons and ions, a stack of PMMA with thermoluminescent detectors at different depths for gaining spectral information about electrons, and a stack of metallic filters with increasing cut-off photon energies, interspersed with thermoluminescent detectors for gaining spectral information about photons. From the reading of the TL detectors the spectral fluence of the electrons (400 keV to 9 MeV) and photons (20 keV to 2 MeV) can be determined by an unfolding procedure. The spectrometer can be used in pulsed radiation fields with extremely high momentary values of the fluence rate. Design and calibration of the spectrometer are described.

Irradiation effects of 12 eV oxygen ions on polyimide and fluorinated ethylene propylene

NASA Astrophysics Data System (ADS)

Majeed, R. M. A.; Purohit, V. S.; Bhoraskar, S. V.; Mandale, A. B.; Bhoraskar, V. N.

2006-08-01

Polyimide (PI) and Fluorinated Ethylene Propylene (FEP) samples (15mm x 15mm x 50 mu m ) were exposed to atomic oxygen ions of average energy similar to 12 eV and flux similar to 5x10(13) ions cm(-2) s(-1) , produced in the Electron Cyclotron Resonance (ECR) plasma. The energy and the flux of the oxygen ions at different positions in the plasma were measured by a retarding field analyzer. The fluence of the oxygen ions was varied from sample to sample in the range of similar to 5x10(16) to 2x10(17) ions cm(-2) by changing the irradiation period. The pre- and the post-irradiated samples were characterized by the weight loss, Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), and Fourier Transform Infrared (FTIR) techniques. The weight of the PI and FEP samples decreased with increasing the ion fluence. However, the erosion yield for the PI is found to be higher, by almost a factor five, when compared with that of FEP. On the surface region of irradiated samples, the concentrations of the carbon, fluorine, and oxygen and their corresponding chemical bonds have changed appreciably. Moreover, blisters and nanoglobules were also observed even at a fluence of similar to 10(17) ions cm(-2) . This oxygen ion fluence is almost two orders of magnitude lower than that of the 5 eV atomic oxygen, which a satellite encounters in the space, at the low Earth orbit, during its mission period of about 7 years.

Probing the Relationship Between Detected Ion Intensity, Laser Fluence, and Beam Profile in Thin Film and Tissue in MALDI MSI

NASA Astrophysics Data System (ADS)

Steven, Rory T.; Race, Alan M.; Bunch, Josephine

2016-08-01

Matrix assisted laser desorption ionization mass spectrometry imaging (MALDI MSI) is increasingly widely used to provide information regarding molecular location within tissue samples. The nature of the photon distribution within the irradiated region, the laser beam profile, and fluence, will significantly affect the form and abundance of the detected ions. Previous studies into these phenomena have focused on circular-core optic fibers or Gaussian beam profiles irradiating dried droplet preparations, where peptides were employed as the analyte of interest. Within this work, we use both round and novel square core optic fibers of 100 and 50 μm diameter to deliver the laser photons to the sample. The laser beam profiles were recorded and analyzed to quantify aspects of the photon distributions and their relation to the spectral data obtained with each optic fiber. Beam profiles with a relatively small number of large beam profile features were found to give rise to the lowest threshold fluence. The detected ion intensity versus fluence relationship was investigated, for the first time, in both thin films of α-cyano-4-hydroxycinnamic acid (CHCA) with phosphatidylcholine (PC) 34:1 lipid standard and in CHCA coated murine tissue sections for both the square and round optic fibers in continuous raster imaging mode. The fluence threshold of ion detection was found to occur at between ~14 and ~64 J/m2 higher in tissue compared with thin film for the same lipid, depending upon the optic fiber employed. The image quality is also observed to depend upon the fluence employed during image acquisition.

Electrical and optical properties of nitrile rubber modified by ion implantation

NASA Astrophysics Data System (ADS)

S, Najidha; Predeep, P.

2014-10-01

Implantation of N+ ion beams are performed on to a non-conjugated elastomer, acrylonirtle butadiene rubber (NBR) with energy 60 keV in the fluence range of 1014 to 1016 ions/cm2. A decrease in the resistivity of the sample by about eight orders of magnitude is observed in the implanted samples along with color changes. The ion exposed specimens were characterized by means of UV/Vis spectroscopy which shows a shift in the absorption edge value for the as deposited polymer towards higher wavelengths. The band gap is evaluated from the absorption spectra and is found to decrease with increasing fluence. This study can possibly throw light on ion induced changes in the polymer surface.

Anisotropic expansion and amorphization of Ga2O3 irradiated with 946 MeV Au ions

NASA Astrophysics Data System (ADS)

Tracy, Cameron L.; Lang, Maik; Severin, Daniel; Bender, Markus; Trautmann, Christina; Ewing, Rodney C.

2016-05-01

The structural response of β-Ga2O3 to irradiation-induced electronic excitation was investigated. A polycrystalline pellet of this material was irradiated with 946 MeV Au ions and the resulting structural modifications were characterized using in situ X-ray diffraction analysis at various ion fluences, up to 1 × 1013 cm-2. Amorphization was induced, with the accumulation of the amorphous phase following a single-impact mechanism in which each ion produces an amorphous ion track along its path. Concurrent with this phase transformation, an increase in the unit cell volume of the material was observed and quantified using Rietveld refinement. This unit cell expansion increased as a function of ion fluence before saturating at 1.8%. This effect is attributed to the generation of defects in an ion track shell region surrounding the amorphous track cores. The unit cell parameter increase was highly anisotropic, with no observed expansion in the [0 1 0] direction. This may be due to the structure of β-Ga2O3, which exhibits empty channels of connected interstitial sites oriented in this direction.

Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

NASA Astrophysics Data System (ADS)

Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

2015-09-01

Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

NASA Astrophysics Data System (ADS)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

NASA Astrophysics Data System (ADS)

Tripathi, J. K.; Novakowski, T. J.; Hassanein, A.

2015-10-01

Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He+ ions as a function of ion fluence (using a constant flux of 7.2 × 1020 ions m-2 s-1) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament ("Mo fuzz") growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He+ ion irradiation deteriorates the surface significantly even at 2.1 × 1023 ions m-2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20-45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 1024 ions m-2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 1024 ions m-2, 7.2 × 1020 ions m-2 s-1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 1021 ions m-2 s-1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 1024 ions m-2 fluence (at a constant flux of 1.2 × 1021 ions m-2 s-1) is quite similar to those for 2.6 × 1024 ions m-2 fluence, the nanostructure wall width extends up to ∼45 nm more and has a quite different nanostructured surface. Ex-situ X-ray photoelectron spectroscopy studies show a sequential reduction in at.% of Mo 3d doublets with fluence, leading to the complete depletion of 2.6 × 1024 ions m-2 at 973 K. For 2.6 × 1024 ions m-2 fluence irradiation at 973 K, only MoO3 3d doublets were observed. However, the Mo 3d doublets reappear at 1273 K irradiation, where a variety of nanostructures were observed with relatively much lower density than that of Mo fuzz. As in the microscopy studies, the reflectivity measurements also show a sequential reduction with ion fluence, leading to almost zero reflectivity value for fully grown fuzzy structures. The study is significant in the understanding of fuzz formation on high-Z refractory metals for fusion applications; in addition, the observed MoO3 fuzz has potential application in solar power concentration technology and in water splitting for hydrogen production.

Erosion and deuterium retention of CLF-1 steel exposed to deuterium plasma

NASA Astrophysics Data System (ADS)

Qiao, L.; Wang, P.; Hu, M.; Gao, L.; Jacob, W.; Fu, E. G.; Luo, G. N.

2017-12-01

In recent years reduced activation ferritic martensitic steel has been proposed as the plasma-facing material in remote regions of the first wall. This study reports the erosion and deuterium retention behaviours in CLF-1 steel exposed to deuterium (D) plasma in a linear experimental plasma system as function of incident ion energy and fluence. The incident D ion energy ranges from 30 to 180 eV at a flux of 4 × 1021 D m-2 s-1 up to a fluence of 1025 D m-2. SEM images revealed a clear change of the surface morphology as functions of incident fluence and impinging energy. The mass loss results showed a decrease of the total sputtering yield of CLF-1 steel with increasing incident fluence by up to one order of magnitude. The total sputtering yield of CLF-1 steel after 7.2 × 1024 D m-2 deuterium plasma exposure reduced by a factor of 4 compared with that of pure iron, which can be attributed to the enrichment of W at the surface due to preferential sputtering of iron and chromium. After D plasma exposure, the total deuterium retention in CLF-1 steel samples measured by TDS decreased with increasing incident fluence and energy, and a clear saturation tendency as function of incident fluence or energy was also observed.

Krypton ion irradiation-induced amorphization and nano-crystal formation in pyrochlore Lu2Ti2O7 at room temperature

NASA Astrophysics Data System (ADS)

Xie, Qiu-Rong; Zhang, Jian; Yin, Dong-Min; Guo, Qi-Xun; Li, Ning

2015-12-01

Polycrystalline pyrochlore Lu2Ti2O7 pellets are irradiated with 600-keV Kr3+ ions up to a fluence of 1.45 × 1016 Kr3+/cm2. Irradiation induced structural modifications are examined by using grazing incidence x-ray diffraction (GIXRD) and cross-sectional transmission electron microscopy (TEM). The GIXRD reveals that amorphous fraction increases with the increase of fluences up to 2 × 1015 Kr3+/cm2, and the results are explained with a direct-impact model. However, when the irradiation fluence is higher than 2 × 1015 Kr3+/cm2, the amorphous fraction reaches a saturation of ∼80%. Further TEM observations imply that nano-crystal is formed with a diameter of ∼10 nm within the irradiation layer at a fluence of 4 × 1015 Kr3+/cm2. No full amorphization is achieved even at the highest fluence of 1.45 × 1016 Kr3+/cm2 (∼36 displacement per atom). The high irradiation resistance of pyrochlore Lu2Ti2O7 at higher fluence is explained on the basis of enhanced radiation tolerance of nano-crystal structure. Project sponsored by the National Natural Science Foundation of China (Grant No. 11205128) and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012121034).

Reduction and structural modification of zirconolite on He+ ion irradiation

NASA Astrophysics Data System (ADS)

Gupta, Merry; Kulriya, P. K.; Shukla, Rishabh; Dhaka, R. S.; Kumar, Raj; Ghumman, S. S.

2016-07-01

The immobilization of minor actinides and alkaline-earth metal is a major concern in nuclear industry due to their long-term radioactive contribution to the high level waste (HLW). Materials having zirconolite, pyrochlore, and perovskite structure are promising candidates for immobilization of HLW. The zirconolite which exhibits high radiation stability and corrosion resistance behavior is investigated for its radiation stability against alpha particles in the present study. CaZrTi2O7 pellets prepared using solid state reaction techniques, were irradiated with 30 keV He+ ions for the ion fluence varying from 1 × 1017 to 1 × 1021 ions/m2. Scanning electron microscopy (SEM) images of the un-irradiated sample exhibited well separated grains with average size of about 6.8 μm. On the ion irradiation, value of the average grains size was about 7.1 μm, and change in the microstructure was insignificant. The X-ray photoelectron spectroscopy (XPS) studies showed a shift in the core level peak position (of Ca 2p, Ti 2p and Zr 3d) towards lower binding energy with respect to pristine sample as well as loss of oxygen was also observed for sample irradiated with the ion fluence of 1 × 1020 ions/m2. These indicate a decrease in co-ordination number and the ionic character of Msbnd O bond. Moreover, core level XPS signal was not detected for sample irradiated with ion fluence of 1 × 1021 ions/m2, suggesting surface damage of the sample at this ion fluence. However, X-ray diffraction (XRD) studies showed that zirconolite was not amorphized even on irradiation up to a fluence order of 1 × 1021 ion/m2. But, significant decrease in peak intensity due to creation of defects and a marginal positive peak shift due to tensile strain induced by irradiation, were observed. Thus, XRD along with XPS investigation suggests that reduction, decrease in co-ordination number, and increase in covalency are responsible for the radiation damage in zirconolite.

Study of irradiation damage induced by He2+ ion irradiation in Ni62Ta38 metallic glass and W metal

NASA Astrophysics Data System (ADS)

Zhang, Xiaonan; Mei, Xianxiu; Zhang, Qi; Li, Xiaona; Wang, Yingmin; Wang, Younian

2017-09-01

Metallic glasses are considered to possess good resistant against irradiation due to their inherent structural long-range disorder and a lack of grain boundaries. The He2+ with an energy of 300 keV was used to irradiate Ni62Ta38 binary metallic glass to investigate its resistance against the irradiation, and the irradiated behaviour of the metallic glass was compared with that of W metal. The irradiation fluence range over 2.0 × 1017 ions/cm2-1.6 × 1018 ions/cm2. The TEM results show that nanocrystals of μ-NiTa phase and Ni2Ta phase appeared in Ni62Ta38 metallic glass under the irradiation fluence of 1.6 × 1018 ions/cm2. The SEM results show that the surfaces of Ni62Ta38 metallic glasses maintained flat and smooth, whereas a large area of blisters with peeling formed on the surface of W metal at the irradiation fluence of 1.0 × 1018 ions/cm2. It indicates that the critical irradiation fluence of surface breakage of the Ni62Ta38 metallic glass is higher than that of W metal. After the irradiation, stress was generated in the surface layer of W metal, leading to the increase of the hardness of W metal.

Graphene defects induced by ion beam

NASA Astrophysics Data System (ADS)

Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

2017-10-01

The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

Influence of Oxygen ions irradiation on Polyaniline/Single Walled Carbon Nanotubes nanocomposite

NASA Astrophysics Data System (ADS)

Patil, Harshada K.; Deshmukh, Megha A.; Gaikwad, Sumedh D.; Bodkhe, Gajanan A.; Asokan, K.; Yasuzawa, Mikito; Koinkar, Pankaj; Shirsat, Mahendara D.

2017-01-01

Influence of Oxygen ions (100 MeV) irradiation on Polyaniline (PANI)/Single Walled Carbon Nanotubes (SWNTs) nanocomposite was studied in the present investigation. PANI/SWNTs nanocomposite was synthesized by electrochemical Cyclic Voltammetry technique. Nanocomposite was exposed under SHI irradiation of Oxygen (100 MeV) ions for three different fluences such as 1×1010 ions/cm2, 5×1010 ions/cm2 and 1×1011 ions/cm2. The SHI irradiated PANI/SWNTs nanocomposite was investigated by using morphological (AFM), structural (XRD) and spectroscopy (FTIR) characterization. AFM study exhibits effects of SHI irradiation on morphology of the nanocomposite and root mean square roughness of the nanocomposite is observed to be decreased as fluence was increased. The FTIR absorption spectrum exhibits formation of new functional sites with the increase in intensity of absorption peaks, due to SHI irradiation. X-Ray Diffraction studies show a gradual decrease in the crystalline nature of the nanocomposite upon irradiation.

Study on swift heavy ions induced modifications of Ag-ZnO nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.; Siva Kumar, V. V.

2017-03-01

In the present work, swift heavy ion (SHI) irradiation induced modifications in structural and optical properties of Ag-ZnO nanocomposite thin films have been investigated. Ag-ZnO nanocomposite (NCs) thin films were synthesized by RF magnetron sputtering technique and irradiated with 100 MeV Ag7+ ions at three different fluences 3 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Rutherford Backscattering Spectrometry revealed Ag concentration to be ∼8.0 at.%, and measured thickness of the films was ∼55 nm. Structural properties of pristine and irradiated films have been analyzed by X-ray diffraction analysis and found that variation in crystallite size of the film with ion irradiation. X-ray photoelectron spectroscopy (XPS) indicates the formation of Ag-ZnO nanocomposite thin film with presence of Ag, Zn and O elements. Oxidation state of Ag and Zn also estimated by XPS analysis. Surface plasmon resonance (SPR) of Ag nanoparticle has appeared at ∼475 nm in the pristine thin film, which is blue shifted by ∼30 nm in film irradiated at fluence of 3 × 1012 ions/cm2 and completely disappeared in film irradiated at higher fluences, 1 × 1013 and 3 × 1013 ions/cm2. A marginal change in the optical band gap of Ag-ZnO nanocomposite thin film is also found with increasing ion fluence. Surface morphology of pristine and irradiated films have been studied using Atomic Force Microscopy (AFM). Raman and Photo-luminance (PL) spectra of nanocomposite thin films have been investigated to understand the ion induced modifications such as lattice defects and disordering in the nanocomposite thin film.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, Rahul; Vishnoi, Ritu; Lakshmi, G. B. V. S.; Biswas, S. K.

2017-04-01

The modifications produced by 55 MeV Si4+ swift heavy ion irradiation on the phenyl C61 butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 1010, 1 × 1011 and 1 × 1012 ions/cm2 fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 1011 ions/cm2 fluence, the overlapping of ion tracks starts and produced overlapping effects.

Ag implantation-induced modification of Ni-Ti shape memory alloy thin films

NASA Astrophysics Data System (ADS)

Kumar, V.; Singhal, R.; Vishnoi, R.; Banerjee, M. K.; Sharma, M. C.; Asokan, K.; Kumar, M.

2017-08-01

Nanocrystalline thin films of Ni-Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120 keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni-Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni-Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni-Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (Er) are observed for the film implanted at an optimized fluence of 9 × 1015 ions/cm2. This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni-Ti thin films.

Electrical and optical properties of nitrile rubber modified by ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

S, Najidha; Predeep, P.

2014-10-15

Implantation of N{sup +} ion beams are performed on to a non-conjugated elastomer, acrylonirtle butadiene rubber (NBR) with energy 60 keV in the fluence range of 10{sup 14} to 10{sup 16} ions/cm{sup 2}. A decrease in the resistivity of the sample by about eight orders of magnitude is observed in the implanted samples along with color changes. The ion exposed specimens were characterized by means of UV/Vis spectroscopy which shows a shift in the absorption edge value for the as deposited polymer towards higher wavelengths. The band gap is evaluated from the absorption spectra and is found to decrease withmore » increasing fluence. This study can possibly throw light on ion induced changes in the polymer surface.« less

120 MeV Ni Ion beam induced modifications in poly (ethylene terephthalate) used in commercial bottled water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Vijay; Sonkawade, R. G.; Ali, Yasir

2012-06-05

We report the effects of heavy ion irradiation on the optical, structural, and chemical properties of polyethylene terephthalate (PET) film used in commercial bottled water. PET bottles were exposed with 120 MeV Ni ions at fluences varying from 3 x 10{sup 10} to 3 x 10{sup 12} ion/cm{sup 2}. The modifications so induced were analyzed by using UV-Vis, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Substantial decrease in optical band gap is observed with the increase in ion fluence. In the FTIR spectra, most of bands are decreased due the degradation of the molecular structure. XRD measurements showmore » the decrease in peak intensity, which reflects the loss of crystallinity after irradiation.« less

Color matters--material ejection and ion yields in UV-MALDI mass spectrometry as a function of laser wavelength and laser fluence.

PubMed

Soltwisch, Jens; Jaskolla, Thorsten W; Dreisewerd, Klaus

2013-10-01

The success of matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) as a widely employed analytical tool in the biomolecular sciences builds strongly on an effective laser-material interaction that is resulting in a soft co-desorption and ionization of matrix and imbedded biomolecules. To obtain a maximized ion yield for the analyte(s) of interest, in general both wavelength and fluence need to be tuned to match the specific optical absorption profile of the used matrix. However, commonly only lasers with fixed emission wavelengths of either 337 or 355 nm are used for MALDI-MS. Here, we employed a wavelength-tunable dye laser and recorded both the neutral material ejection and the MS ion data in a wide wavelength and fluence range between 280 and 377.5 nm. α-Cyano-4-hydroxycinnamic acid (HCCA), 4-chloro-α-cyanocinnamic acid (ClCCA), α-cyano-2,4-difluorocinnamic acid (DiFCCA), and 2,5-dihydroxybenzoic acid (DHB) were investigated as matrices, and several peptides as analytes. Recording of the material ejection was achieved by adopting a photoacoustic approach. Relative ion yields were derived by division of photoacoustic and ion signals. In this way, distinct wavelength/fluence regions can be identified for which maximum ion yields were obtained. For the tested matrices, optimal results were achieved for wavelengths corresponding to areas of high optical absorption of the respective matrix and at fluences about a factor of 2-3 above the matrix- and wavelength-dependent ion detection threshold fluences. The material ejection as probed by the photoacoustic method is excellently fitted by the quasithermal model, while a sigmoidal function allows for an empirical description of the ion signal-fluence relationship.

Development of a simple, low cost, indirect ion beam fluence measurement system for ion implanters, accelerators

NASA Astrophysics Data System (ADS)

Suresh, K.; Balaji, S.; Saravanan, K.; Navas, J.; David, C.; Panigrahi, B. K.

2018-02-01

We developed a simple, low cost user-friendly automated indirect ion beam fluence measurement system for ion irradiation and analysis experiments requiring indirect beam fluence measurements unperturbed by sample conditions like low temperature, high temperature, sample biasing as well as in regular ion implantation experiments in the ion implanters and electrostatic accelerators with continuous beam. The system, which uses simple, low cost, off-the-shelf components/systems and two distinct layers of in-house built softwarenot only eliminates the need for costly data acquisition systems but also overcomes difficulties in using properietry software. The hardware of the system is centered around a personal computer, a PIC16F887 based embedded system, a Faraday cup drive cum monitor circuit, a pair of Faraday Cups and a beam current integrator and the in-house developed software include C based microcontroller firmware and LABVIEW based virtual instrument automation software. The automatic fluence measurement involves two important phases, a current sampling phase lasting over 20-30 seconds during which the ion beam current is continuously measured by intercepting the ion beam and the averaged beam current value is computed. A subsequent charge computation phase lasting 700-900 seconds is executed making the ion beam to irradiate the samples and the incremental fluence received by the sampleis estimated usingthe latest averaged beam current value from the ion beam current sampling phase. The cycle of current sampling-charge computation is repeated till the required fluence is reached. Besides simplicity and cost-effectiveness, other important advantages of the developed system include easy reconfiguration of the system to suit customisation of experiments, scalability, easy debug and maintenance of the hardware/software, ability to work as a standalone system. The system was tested with different set of samples and ion fluences and the results were verified using Rutherford backscattering technique which showed the satisfactory functioning of the system. The accuracy of the fluence measurements is found to be less than 2% which meets the demands of the irradiation experiments undertaken using the developed set up. The system was incorporated for regular use at the existing ultra high vacuum (UHV) ion irradiation chamber of 1.7 MV Tandem accelerator and several ion implantation experiments on a variety of samples like SS304, D9, ODS alloys have been successfully carried out.

Effect of W self-implantation and He plasma exposure on early-stage defect and bubble formation in tungsten

NASA Astrophysics Data System (ADS)

Thompson, M.; Drummond, D.; Sullivan, J.; Elliman, R.; Kluth, P.; Kirby, N.; Riley, D.; Corr, C. S.

2018-06-01

To determine the effect of pre-existing defects on helium-vacancy cluster nucleation and growth, tungsten samples were self-implanted with 1 MeV tungsten ions at varying fluences to induce radiation damage, then subsequently exposed to helium plasma in the MAGPIE linear plasma device. Positron annihilation lifetime spectroscopy was performed both immediately after self-implantation, and again after plasma exposure. After self-implantation vacancies clusters were not observed near the sample surface (<30 nm). At greater depths (30–150 nm) vacancy clusters formed, and were found to increase in size with increasing W-ion fluence. After helium plasma exposure in the MAGPIE linear plasma device at ~300 K with a fluence of 1023 He-m‑2, deep (30–150 nm) vacancy clusters showed similar positron lifetimes, while shallow (<30 nm) clusters were not observed. The intensity of positron lifetime signals fell for most samples after plasma exposure, indicating that defects were filling with helium. The absence of shallow clusters indicates that helium requires pre-existing defects in order to drive vacancy cluster growth at 300 K. Further samples that had not been pre-damaged with W-ions were also exposed to helium plasma in MAGPIE across fluences from 1  ×  1022 to 1.2  ×  1024 He-m‑2. Samples exposed to fluences up to 1  ×  1023 He-m‑2 showed no signs of damage. Fluences of 5  ×  1023 He-m‑2 and higher showed significant helium-cluster formation within the first 30 nm, with positron lifetimes in the vicinity 0.5–0.6 ns. The sample temperature was significantly higher for these higher fluence exposures (~400 K) due to plasma heating. This higher temperature likely enhanced bubble formation by significantly increasing the rate interstitial helium clusters generate vacancies, which is we suspect is the rate-limiting step for helium-vacancy cluster/bubble nucleation in the absence of pre-existing defects.

Effect of 50MeV Li{sup 3+} ion irradiation on structural, optical and electrical properties of amorphous Se{sub 95}Zn{sub 5} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Shabir, E-mail: shaphyjmi@gmail.com; Sethi, Riti; Nasir, Mohd

2015-08-28

Present work focuses on the effect of swift heavy ion (SHI) irradiation of 50MeV Li{sup 3+} ions by varying the fluencies in the range of 1×10{sup 12} to 5×10{sup 13} ions/cm{sup 2} on the morphological, structural, optical and electrical properties of amorphous Se{sub 95}Zn{sub 5} thin films. Thin films of ~250nm thickness were deposited on cleaned glass substrates by thermal evaporation technique. X-ray diffraction (XRD) analysis shows the pristine thin film of Se{sub 95}Zn{sub 5} growsin hexagonal phase structure. Also it was found that the small peak observed in XRD spectra vanishes after SHI irradiation indicates the defects of themore » material increases. The optical parameters: absorption coefficient (α), extinction coefficient (K), refractive index (n) optical band gap (E{sub g}) and Urbach’s energy (E{sub U}) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200-1000nm. It was found that the values of absorption coefficient, refractive index and extinction coefficient increases while the value optical band gap decreases with the increase of ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model. Electrical properties such as dc conductivity and temperature dependent photoconductivity of investigated thin films were carried out in the temperature range 309-370 K. Analysis of data shows activation energy of dark current is greater as compared to activation energy photocurrent. The value of activation energy decreases with the increase of ion fluence indicates that the defect density of states increases.Also it was found that the value of dc conductivity and photoconductivity increases with the increase of ion fluence.« less

Synthesis of nanodimensional orthorhombic SnO2 thin films

NASA Astrophysics Data System (ADS)

Kondkar, V.; Rukade, D.; Kanjilal, D.; Bhattacharyya, V.

2018-04-01

Amorphous thin films of SnO2 are irradiated by swift heavy ions at two different fluences. Unirradiated as well as irradiated films are characterized by glancing angle X-ray diffraction (GAXRD), UV-Vis spectroscopy and atomic force microscopy (AFM). GAXRD study reveals formation of orthorhombic nanophases of SnO2. Nanophase formation is also confirmed by the quantum size effect manifested by blue shift in terms of increase in band gap energy. The size and shape of the irradiation induced surface structures depend on ion fluence.

Fluence correction factor for graphite calorimetry in a clinical high-energy carbon-ion beam.

PubMed

Lourenço, A; Thomas, R; Homer, M; Bouchard, H; Rossomme, S; Renaud, J; Kanai, T; Royle, G; Palmans, H

2017-04-07

The aim of this work is to develop and adapt a formalism to determine absorbed dose to water from graphite calorimetry measurements in carbon-ion beams. Fluence correction factors, [Formula: see text], needed when using a graphite calorimeter to derive dose to water, were determined in a clinical high-energy carbon-ion beam. Measurements were performed in a 290 MeV/n carbon-ion beam with a field size of 11  ×  11 cm 2 , without modulation. In order to sample the beam, a plane-parallel Roos ionization chamber was chosen for its small collecting volume in comparison with the field size. Experimental information on fluence corrections was obtained from depth-dose measurements in water. This procedure was repeated with graphite plates in front of the water phantom. Fluence corrections were also obtained with Monte Carlo simulations through the implementation of three methods based on (i) the fluence distributions differential in energy, (ii) a ratio of calculated doses in water and graphite at equivalent depths and (iii) simulations of the experimental setup. The [Formula: see text] term increased in depth from 1.00 at the entrance toward 1.02 at a depth near the Bragg peak, and the average difference between experimental and numerical simulations was about 0.13%. Compared to proton beams, there was no reduction of the [Formula: see text] due to alpha particles because the secondary particle spectrum is dominated by projectile fragmentation. By developing a practical dose conversion technique, this work contributes to improving the determination of absolute dose to water from graphite calorimetry in carbon-ion beams.

Swift heavy ion induced topography changes of Tin oxide thin films

NASA Astrophysics Data System (ADS)

Jaiswal, Manoj K.; Kumar, Avesh; Kanjilal, D.; Mohanty, T.

2012-12-01

Monodisperse tin oxide nanocrystalline thin films are grown on silicon substrates by electron beam evaporation method followed by 100 MeV silver ion bombardment with varying ion fluence from 5 × 1011 ions cm-2 to 1 × 1013 ions cm-2 at constant ion flux. Enhancement of crystallinity of thin films with fluence is observed from glancing angle X-ray diffraction studies. Morphological studies by atomic force microscopy reveal the changes in grain size from 25 nm to 44 nm with variation in ion fluence. The effect of initial surface roughness and adatom mobility on topography is reported. In this work correlation between ion beam induced defect concentration with topography and grain size distribution is emphasized.

Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. Q.; Zhang, C. H.; Xian, Y. Q.; Liu, J.; Ding, Z. N.; Yan, T. X.; Chen, Y. G.; Su, C. H.; Li, J. Y.; Liu, H. P.

2018-05-01

N-type gallium nitride (GaN) epitaxial layers were subjected to 990-keV Bi33+ ions irradiation to various fluences. Optoelectric properties of the irradiated-GaN specimens were studied by means of Raman scattering and variable temperature photoluminescence (PL) spectroscopy. Raman spectra reveal that both the free-carrier concentration and its mobility generally decrease with a successive increase in ion fluence. Electro-optic mechanisms dominated the electrical transport to a fluence of 1.061 × 1012 Bi33+/cm2. Above this fluence, electrical properties were governed by the deformation potential. The appearance of vacancy-type defects results in an abrupt degradation in electrical transports. Varying temperature photoluminescence (PL) spectra display that all emission lines of 1.061 × 1012 Bi33+/cm2-irradiated specimen present a general remarkable thermal redshift, quenching, and broadening, including donor-bound-exciton peak, yellow luminescence band, and LO-phonon replicas. Moreover, as the temperature rises, a transformation from excitons (donor-acceptor pairs' luminescence) to band-to-band transitions (donor-acceptor combinations) was found, and the shrinkage effect of the band gap dominated the shift of the peak position gradually, especially the temperature increases above 150 K. In contrast to the un-irradiated specimen, a sensitive temperature dependence of all photoluminescence (PL) lines' intensity obtained from 1.061 × 1012 Bi33+/cm2-irradiated specimen was found. Mechanisms underlying were discussed.

Impact of Mg-ion implantation with various fluence ranges on optical properties of n-type GaN

NASA Astrophysics Data System (ADS)

Tsuge, Hirofumi; Ikeda, Kiyoji; Kato, Shigeki; Nishimura, Tomoaki; Nakamura, Tohru; Kuriyama, Kazuo; Mishima, Tomoyoshi

2017-10-01

Optical characteristics of Mg-ion implanted GaN layers with various fluence ranges were evaluated. Mg ion implantation was performed twice at energies of 30 and 60 keV on n-GaN layers. The first implantation at 30 keV was performed with three different fluence ranges of 1.0 × 1014, 1.0 × 1015 and 5.0 × 1015 cm-2. The second implantation at an energy of 60 keV was performed with a fluence of 6.5 × 1013 cm-2. After implantation, samples were annealed at 1250 °C for 1 min under N2 atmosphere. Photoluminescence (PL) spectrum of the GaN layer with the Mg ion implantation at the fluence range of 1.0 × 1014 cm-2 at 30 keV was similar to the one of Mg-doped p-GaN layers grown by MOVPE (Metal-Organic Vapor Phase Epitaxy) on free-standing GaN substrates and those at the fluence ranges over 1.0 × 1015 cm-2 were largely degraded.

Laser fluence dependence on emission dynamics of ultrafast laser induced copper plasma

DOE PAGES

Anoop, K. K.; Harilal, S. S.; Philip, Reji; ...

2016-11-14

The characteristic emission features of a laser-produced plasma strongly depend strongly on the laser fluence. We investigated the spatial and temporal dynamics of neutrals and ions in femtosecond laser (800 nm, ≈ 40 fs, Ti:Sapphire) induced copper plasma in vacuum using both optical emission spectroscopy (OES) and spectrally resolved two-dimensional (2D) imaging methods over a wide fluence range of 0.5 J/cm 2-77.5 J/cm 2. 2D fast gated monochromatic images showed distinct plume splitting between the neutral and ions especially at moderate to higher fluence ranges. OES studies at low to moderate laser fluence regime confirm intense neutral line emission overmore » the ion emission whereas this trend changes at higher laser fluence with dominance of the latter. This evidences a clear change in the physical processes involved in femtosecond laser matter interaction at high input laser intensity. The obtained ion dynamics resulting from the OES, and spectrally resolved 2D imaging are compared with charged particle measurement employing Faraday cup and Langmuir probe and results showed good correlation.« less

Nickel nanowires mesh fabricated by ion beam irradiation-induced nanoscale welding for transparent conducting electrodes

NASA Astrophysics Data System (ADS)

Honey, S.; Ahmad, I.; Madhuku, M.; Naseem, S.; Maaza, M.; Kennedy, J. V.

2017-07-01

In this report, random nickel nanowires (Ni-NWs) meshes are fabricated by ions beam irradiation-induced nanoscale welding of NWs on intersecting positions. Ni-NWs are exposed to beam of 50 KeV Argon (Ar+) ions at various fluencies in the range ~1015 ions cm-2 to 1016 ions cm-2 at room temperature. Ni-NWs are welded due to accumulation of Ar+ ions beam irradiation-induced sputtered atoms on crossing positions. Ar+ ions irradiated Ni-NWs meshes are optically transparent and optical transparency is enhanced with increase in beam fluence of Ar+ ions. Ar+ ions beam irradiation-induced welded and optically transparent mesh is then exposed to 2.75 MeV hydrogen (H+) ions at fluencies 1  ×  1015 ions cm-2, 3  ×  1015 ions cm-2 and 1  ×  1016 ions cm-2 at room temperature. MeV H+ ions irradiation-induced local heat cause melting and fusion of NWs on intersecting points and eventually lead to reduce contact resistance between Ni-NWs. Electrical conductivity is enhanced with increase in beam fluence of H+ ions. These welded highly transparent and electrically conductive Ni-NWs meshes can be employed as transparent conducting electrodes in optoelectronic devices.

Effects of Fe concentration on the ion-irradiation induced defect evolution and hardening in Ni-Fe solid solution alloys

DOE PAGES

Jin, Ke; Guo, Wei; Lu, Chenyang; ...

2016-12-01

Understanding alloying effects on the irradiation response of structural materials is pivotal in nuclear engineering. In order to systematically explore the effects of Fe concentration on the irradiation-induced defect evolution and hardening in face-centered cubic Ni-Fe binary solid solution alloys, single crystalline Ni-xFe (x = 0–60 at%) alloys have been grown and irradiated with 1.5 MeV Ni ions. The irradiations have been performed over a wide range of fluences from 3 × 10 13 to 3 × 10 16 cm -2 at room temperature. Ion channeling technique has shown reduced damage accumulation with increasing Fe concentration in the low fluencemore » regime, which is consistent to the results from molecular dynamic simulations. We did not observe any irradiation-induced compositional segregation in atom probe tomography within the detection limit, even in the samples irradiated with high fluence Ni ions. Transmission electron microscopy analyses have further demonstrated that the defect size significantly decreases with increasing Fe concentration, indicating a delay in defect evolution. Furthermore, irradiation induced hardening has been measured by nanoindentation tests. Ni and the Ni-Fe alloys have largely different initial hardness, but they all follow a similar trend for the increase of hardness as a function of irradiation fluence.« less

Effects of Fe concentration on the ion-irradiation induced defect evolution and hardening in Ni-Fe solid solution alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Ke; Guo, Wei; Lu, Chenyang

Understanding alloying effects on the irradiation response of structural materials is pivotal in nuclear engineering. In order to systematically explore the effects of Fe concentration on the irradiation-induced defect evolution and hardening in face-centered cubic Ni-Fe binary solid solution alloys, single crystalline Ni-xFe (x = 0–60 at%) alloys have been grown and irradiated with 1.5 MeV Ni ions. The irradiations have been performed over a wide range of fluences from 3 × 10 13 to 3 × 10 16 cm -2 at room temperature. Ion channeling technique has shown reduced damage accumulation with increasing Fe concentration in the low fluencemore » regime, which is consistent to the results from molecular dynamic simulations. We did not observe any irradiation-induced compositional segregation in atom probe tomography within the detection limit, even in the samples irradiated with high fluence Ni ions. Transmission electron microscopy analyses have further demonstrated that the defect size significantly decreases with increasing Fe concentration, indicating a delay in defect evolution. Furthermore, irradiation induced hardening has been measured by nanoindentation tests. Ni and the Ni-Fe alloys have largely different initial hardness, but they all follow a similar trend for the increase of hardness as a function of irradiation fluence.« less

Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

NASA Astrophysics Data System (ADS)

Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

2018-05-01

As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

Depth-resolved photo- and ionoluminescence of LiF and Al2O3

NASA Astrophysics Data System (ADS)

Skuratov, V. A.; Kirilkin, N. S.; Kovalev, Yu. S.; Strukova, T. S.; Havanscak, K.

2012-09-01

Microluminescence and laser confocal scanning microscopy techniques have been used to study spatial distribution of F-type color centers in LiF and mechanical stress profiles in Al2O3:Cr single crystals irradiated with 1.2 MeV/amu Ar, Kr, Xe and 3 MeV/amu Kr and Bi ions. It was found that F2 and F3+-center profiles at low ion fluences correlate with ionizing energy loss profiles. With increasing ion fluence, after ion track halo overlapping, the luminescence yield is defined by radiation defects formed in elastic collisions in the end-of-range area. Stress profiles and stress tensor components in ruby crystals across swift heavy ion irradiated layers have been deduced from depth-resolved photo-stimulated spectra using piezospectroscopic effect. Experimental data show that that stresses are compressive in basal plane and tensile in perpendicular direction in all samples irradiated with high energy ions.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

NASA Astrophysics Data System (ADS)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Čubrović, V.; Bibić, N.; Rakočević, Z.

2018-07-01

Evolution of the structure of cobalt-silicon films during Xe ions irradiation has been studied and the same is correlated with magnetic properties. The polycrystalline cobalt films were deposited by electron beam evaporation method to a thickness of 50 nm on crystalline silicon (c-Si) and silicon with pre-amorphized surface (a-Si). After deposition the layers were irradiated with 400 keV Xe ions to the fluences in the range of 2-30 × 1015 ions/cm2. Structural analysis was done by means of transmission electron microscopy, atomic force microscopy (AFM) and X-ray diffraction (XRD), while the magnetic properties were analyzed by using magneto-optical Kerr effect (MOKE) technique. For the both types of substrate the AFM and XRD results show that after Xe ions irradiation the layers become more rough and the grain size of the crystallites increases; the effects being more evidenced for all fluences for the layers deposited on pre-amorphized Si. The MOKE measurements provided the in-plane azimuthal angular dependence of the hysteresis loops and the change of magnetization with the structural parameters. Although the coercive field is influenced by the surface roughness, in the case of c-Si substrate we found it is much more determined by the size of the crystallites. Additionally, independently on the substrate used the magnetic anisotropy in the Co films disappeared as the Xe ion fluence increased, indicating that the changes of magnetization in both systems occur for similar reasons.

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Kondyurin, Alexey; Bilek, Marcela

2011-06-01

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10 15 ions/cm 2 was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.

Near-surface density profiling of Fe ion irradiated Si (100) using extremely asymmetric x-ray diffraction by variation of the wavelength

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de; Pietsch, U.; Facsko, S.

2014-10-20

In this work, we report on correlations between surface density variations and ion parameters during ion beam-induced surface patterning process. The near-surface density variations of irradiated Si(100) surfaces were investigated after off-normal irradiation with 5 keV Fe ions at different fluences. In order to reduce the x-ray probing depth to a thickness below 5 nm, the extremely asymmetrical x-ray diffraction by variation of wavelength was applied, exploiting x-ray refraction at the air-sample interface. Depth profiling was achieved by measuring x-ray rocking curves as function of varying wavelengths providing incidence angles down to 0°. The density variation was extracted from the deviationsmore » from kinematical Bragg angle at grazing incidence angles due to refraction of the x-ray beam at the air-sample interface. The simulations based on the dynamical theory of x-ray diffraction revealed that while a net near-surface density decreases with increasing ion fluence which is accompanied by surface patterning, there is a certain threshold of ion fluence to surface density modulation. Our finding suggests that the surface density variation can be relevant with the mechanism of pattern formation.« less

Ripple pattern formation on silicon surfaces by low-energy ion-beam erosion: Experiment and theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ziberi, B.; Frost, F.; Rauschenbach, B.

The topography evolution of Si surfaces during low-energy noble-gas ion-beam erosion (ion energy {<=}2000 eV) at room temperature has been studied. Depending on the ion-beam parameters, self-organized ripple patterns evolve on the surface with a wavelength {lambda}<100 nm. Ripple patterns were found to occur at near-normal ion incidence angles (5 deg. -30 deg.) with the wave vector oriented parallel to the ion-beam direction. The ordering and homogeneity of these patterns increase with ion fluence, leading to very-well-ordered ripples. The ripple wavelength remains constant with ion fluence. Also, the influence of ion energy on the ripple wavelength is investigated. Additionally itmore » is shown that the mass of the bombarding ion plays a decisive role in the ripple formation process. Ripple patterns evolve for Ar{sup +},Kr{sup +}, and Xe{sup +} ions, while no ripples are observed using Ne{sup +} ions. These results are discussed in the context of continuum theories and by using Monte Carlo simulations.« less

RELATIVE DISTRIBUTIONS OF FLUENCES OF {sup 3}He AND {sup 4}He IN SOLAR ENERGETIC PARTICLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrosian, Vahe; Jiang Yanwei; Liu Siming

2009-08-10

Solar energetic particles show a rich variety of spectra and relative abundances of many ionic species and their isotopes. A long-standing puzzle has been the extreme enrichments of {sup 3}He ions. The most extreme enrichments are observed in low-fluence, the so-called impulsive, events which are believed to be produced at the flare site in the solar corona with little scattering and acceleration during transport to the Earth. In such events, {sup 3}He ions show a characteristic concave curved spectra in a log-log plot. In two earlier papers of Liu et al., we showed how such extreme enrichments and spectra canmore » result in the model developed by Petrosian and Liu, where ions are accelerated stochastically by plasma waves or turbulence. In this paper, we address the relative distributions of the fluences of {sup 3}He and {sup 4}He ions presented by Ho et al., which show that while the distribution of {sup 4}He fluence (which we believe is a good measure of the flare strength) like many other extensive characteristics of solar flare is fairly broad, the {sup 3}He fluence is limited to a narrow range. These characteristics introduce a strong anticorrelation between the ratio of the fluences and the {sup 4}He fluence. One of the predictions of our model presented in the 2006 paper was the presence of steep variation of the fluence ratio with the level of turbulence or the rate of acceleration. We show here that this feature of the model can reproduce the observed distribution of the fluences with very few free parameters. The primary reason for the success of the model in both fronts is because fully ionized {sup 3}He ion, with its unique charge-to-mass ratio, can resonantly interact with plasma modes not accessible to {sup 4}He and be accelerated more readily than {sup 4}He. Essentially in most flares, all background {sup 3}He ions are accelerated to few MeV/nucleon range, while this happens for {sup 4}He ions only in very strong events. A much smaller fraction of {sup 4}He ions reach such energies in weaker events.« less

The effect of fluence on the magnetic properties of superparamagnetic iron-nickel nanoparticles in SiO2 made by dual Ni and Fe low energy ion implantation

NASA Astrophysics Data System (ADS)

Williams, G. V. M.; Prakash, T.; Kennedy, J.

2017-10-01

Superparamagnetic Ni1-yFey nanoparticles were made in a SiO2 film by 10 keV ion beam implantation of Ni followed by Fe with a Ni fluence of 4 × 1016 at.cm-2 and a Fe fluence fraction of 0.47. Nearly all of the moments magnetically ordered, which was not reported for an implanted film made with a Fe fluence fraction of 0.56 and half the Ni fluence. The temperature dependence of the saturation moment is remarkably similar for low and high Ni fluences where there is also the presence of very thin spin-disordered shells. The higher Ni fluence leads to a significant enhancement of the susceptibility by a factor of 9 when compared with the lower fluence sample. This enhancement is likely to be due to a larger magnetically ordered volume fraction.

Structural and chemical alteration of crystalline olivine under low energy He+ irradiation

NASA Astrophysics Data System (ADS)

Demyk, K.; Carrez, Ph.; Leroux, H.; Cordier, P.; Jones, A. P.; Borg, J.; Quirico, E.; Raynal, P. I.; d'Hendecourt, L.

2001-03-01

We present the results of irradiation experiments on crystalline olivine with He+ ions at energies of 4 and 10 keV and fluences varying from 5 1016 to 1018 ions/cm2. The aim of these experiments is to simulate ion implantation into interstellar grains in shocks in the ISM. Irradiated samples were analysed by transmission electron microscopy (TEM). The irradiation causes the amorphization of the olivine, at all He+ fluences considered. The thickness of the amorphized region is 40 +/- 15 nm and 90 +/- 10 nm for the 4 keV and 10 keV experiments, respectively. The amorphization of the olivine occurs in conjunction with an increase in the porosity of the material due to the formation of bubbles. In addition, the amorphized layer is deficient in oxygen and magnesium. We find that the O/Si and Mg/Si ratios decrease as the He+ fluence increases. These experiments show that the irradiation of dust in supernova shocks can efficiently alter the dust structure and composition. Our result are consistent with the lack of crystalline silicates in the interstellar medium and also with the compositional evolution observed from olivine-type silicates around evolved stars to pyroxene-type silicates around protostars.

Oxygen ion implantation induced microstructural changes and electrical conductivity in Bakelite RPC detector material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, K. V. Aneesh, E-mail: aneesh1098@gmail.com; Ravikumar, H. B., E-mail: hbr@physics.uni-mysore.ac.in; Ranganathaiah, C., E-mail: cr@physics.uni-mysore.ac.in

2016-05-06

In order to explore the structural modification induced electrical conductivity, samples of Bakelite Resistive Plate Chamber (RPC) detector materials were exposed to 100 keV Oxygen ion in the fluences of 10{sup 12}, 10{sup 13}, 10{sup 14} and 10{sup 15} ions/cm{sup 2}. Ion implantation induced microstructural changes have been studied using Positron Annihilation Lifetime Spectroscopy (PALS) and X-Ray Diffraction (XRD) techniques. Positron lifetime parameters viz., o-Ps lifetime and its intensity shows the deposition of high energy interior track and chain scission leads to the formation of radicals, secondary ions and electrons at lower ion implantation fluences (10{sup 12} to10{sup 14} ions/cm{supmore » 2}) followed by cross-linking at 10{sup 15} ions/cm{sup 2} fluence due to the radical reactions. The reduction in electrical conductivity of Bakelite detector material is correlated to the conducting pathways and cross-links in the polymer matrix. The appropriate implantation energy and fluence of Oxygen ion on polymer based Bakelite RPC detector material may reduce the leakage current, improves the efficiency, time resolution and thereby rectify the aging crisis of the RPC detectors.« less

Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO₃

DOE PAGES

Huang, Hsu-Cheng; Zhang, Lihua; Malladi, Girish; ...

2015-04-14

In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO₃. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formationmore » than for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)« less

Radiation damage by light- and heavy-ion bombardment of single-crystal LiNbO₃

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Hsu-Cheng; Zhang, Lihua; Malladi, Girish

In this work, a battery of analytical methods including in situ RBS/C, confocal micro-Raman, TEM/STEM, EDS, AFM, and optical microscopy were used to provide a comparative investigation of light- and heavy-ion radiation damage in single-crystal LiNbO₃. High (~MeV) and low (~100s keV) ion energies, corresponding to different stopping power mechanisms, were used and their associated damage events were observed. In addition, sequential irradiation of both ion species was also performed and their cumulative depth-dependent damage was determined. It was found that the contribution from electronic stopping by high-energy heavy ions gave rise to a lower critical fluence for damage formationmore » than for the case of low-energy irradiation. Such energy-dependent critical fluence of heavy-ion irradiation is two to three orders of magnitude smaller than that for the case of light-ion damage. In addition, materials amorphization and collision cascades were seen for heavy-ion irradiation, while for light ion, crystallinity remained at the highest fluence used in the experiment. The irradiation-induced damage is characterized by the formation of defect clusters, elastic strain, surface deformation, as well as change in elemental composition. In particular, the presence of nanometric-scale damage pockets results in increased RBS/C backscattered signal and the appearance of normally forbidden Raman phonon modes. The location of the highest density of damage is in good agreement with SRIM calculations. (author)« less

Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang, Z. Y.; Breese, M. B. H.; Lin, Y.

2014-05-12

A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such asmore » cesium over a wide range of fluences and irradiation geometries.« less

A review of colour center and nanostructure creation in LiF under heavy ion irradiation

NASA Astrophysics Data System (ADS)

Schwartz, K.; Maniks, J.; Manika, I.

2015-09-01

A study of radiation damage in LiF crystals under irradiation with MeV-GeV energy ions, from 12C to 238U, at temperatures varying from 8 to 300 K, depending on the ion energy, energy loss and irradiation temperature, is presented. For light ions (12C, 14N) at low fluences, it is mainly color centers that are created. Increasing the fluence leads to the overlapping of tracks and the creation of more complex color centers, defect aggregates and dislocations. For ions with an energy loss above a threshold value (dE/dx = 10 keV nm-1) the tracks exhibit a central core damage region with a radius of 1-2 nm, surrounded by an extended halo which mainly contains single color centers. In this case, ion-induced nanostructuring is observed. Novel effects of radiation damage creation under ion irradiation at 8 K are observed. The role of energy loss and irradiation temperature in damage creation is discussed.

The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer

NASA Astrophysics Data System (ADS)

Gloux, F.; Ruterana, P.; Wojtowicz, T.; Lorenz, K.; Alves, E.

2006-10-01

The crystallographic nature of the damage created in GaN implanted by rare earth ions at 300 keV and room temperature has been investigated by transmission electron microscopy versus the fluence, from 7×10 13 to 2×10 16 at/cm 2, using Er, Eu or Tm ions. The density of point defect clusters was seen to increase with the fluence. From about 3×10 15 at/cm 2, a highly disordered 'nanocrystalline layer' (NL) appears on the GaN surface. Its structure exhibits a mixture of voids and misoriented nanocrystallites. Basal stacking faults (BSFs) of I 1, E and I 2 types have been noticed from the lowest fluence, they are I 1 in the majority. Their density increases and saturates when the NL is observed. Many prismatic stacking faults (PSFs) with Drum atomic configuration have been identified. The I 1 BSFs are shown to propagate easily through GaN by folding from basal to prismatic planes thanks to the PSFs. When implanting through a 10 nm AlN cap, the NL threshold goes up to about 3×10 16 at/cm 2. The AlN cap plays a protective role against the dissociation of the GaN up to the highest fluences. The flat surface after implantation and the absence of SFs in the AlN cap indicate its high resistance to the damage formation.

Clustered vacancies in ZnO: chemical aspects and consequences on physical properties

NASA Astrophysics Data System (ADS)

Pal, S.; Gogurla, N.; Das, Avishek; Singha, S. S.; Kumar, Pravin; Kanjilal, D.; Singha, A.; Chattopadhyay, S.; Jana, D.; Sarkar, A.

2018-03-01

The chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. The evolution of a defective state with MeV Ar ion irradiation fluence 1  ×  1014 and 1  ×  1016 ions cm-2 has been monitored here using x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Raman spectroscopy. The XPS study shows the presence of oxygen vacancies (V O) in Ar irradiated ZnO. Zn(LMM) Auger spectra clearly identifies a transition involving metallic zinc in the irradiated samples. An intense PL emission from interstitial Zn (I Zn)-related shallow donor bound excitons (DBX) is visible in the 10 K spectra for all samples. Although overall PL is largely reduced with irradiation disorder, DBX intensity is increased for the highest fluence irradiated sample. The Raman study indicates damage in both the zinc and oxygen sub-lattice by an energetic ion beam. Representative Raman modes from defect complexes involving V O, I Zn and I O are visible after irradiation with intermediate fluence. A further increase of fluence shows, to some extent, a homogenization of disorder. A huge reduction of resistance is also noted for this sample. Certainly, high irradiation fluence induces a qualitative modification of the conventional (and highly resistive) grain boundary (GB) structure of granular ZnO. A low resistive path, involving I Zn related shallow donors, across the GB can be presumed to explain resistance reduction. Open volumes (V Zn and V O) agglomerate more and more with increasing irradiation fluence and are finally transformed to voids. The results as a whole have been elucidated with a model which emphasizes the possible evolution of a new defect microstructure that is distinctively different from the GB-related disorder. Based on the model, qualitative explanations of commonly observed radiation hardness, colouration and ferromagnetism in disordered ZnO have been put forward. A coherent scenario on disorder accumulation in ZnO has been presented, which we believe will guide further discussion on this topic.

Investigation of hydrogen concentration and hardness of ion irradiated organically modified silicate thin films

NASA Astrophysics Data System (ADS)

Qi, Y.; Prenzel, T.; Harriman, T. A.; Wang, Y. Q.; Lucca, D. A.; Williams, D.; Nastasi, M.; Dong, J.; Mehner, A.

2010-06-01

A study of the effects of ion irradiation of organically modified silicate thin films on the loss of hydrogen and increase in hardness is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Elastic Recoil Detection (ERD) was used to investigate resulting hydrogen concentration as a function of ion fluence and irradiating species. Nanoindentation was used to measure the hardness of the irradiated films. FT-IR spectroscopy was also used to examine resulting changes in chemical bonding. The resulting hydrogen loss and increase in hardness are compared to similarly processed acid catalyzed silicate thin films.

Atypical self-activation of Ga dopant for Ge nanowire devices.

PubMed

Zeiner, Clemens; Lugstein, Alois; Burchhart, Thomas; Pongratz, Peter; Connell, Justin G; Lauhon, Lincoln J; Bertagnolli, Emmerich

2011-08-10

In this Letter we report the atypical self-activation of gallium (Ga) implanted by focused ion beam (FIB) into germanium nanowires (Ge-NWs). By FIB implantation of 30 keV Ga(+) ions at room temperature, the Ge-NW conductivity increases up to 3 orders of magnitude with increasing ion fluence. Cu(3)Ge heterostructures were formed by diffusion to ensure well-defined contacts to the NW and enable two point I/V measurements. Additional four point measurements prove that the conductivity enhancement emerges from the modification of the wires themselves and not from contact property modifications. The Ga distribution in the implanted Ge-NWs was measured using atom probe tomography. For high ion fluences, and beginning amorphization of the NWs, the conductivity decreases exponentially. Temperature dependent conductivity measurements show strong evidence for an in situ doping of the Ge-NWs without any further annealing. Finally the feasibility of improving the device performance of top-gated Ge-NW MOSFETs by FIB implantation was shown.

Transmission electron microscopy study of the heavy-ion-irradiation-induced changes in the nanostructure of oxide dispersion strengthened steels

NASA Astrophysics Data System (ADS)

Rogozhkin, S. V.; Bogachev, A. A.; Orlov, N. N.; Korchuganova, O. A.; Nikitin, A. A.; Zaluzhnyi, A. G.; Kozodaev, M. A.; Kulevoy, T. V.; Kuibeda, R. P.; Fedin, P. A.; Chalykh, B. B.; Lindau, R.; Hoffman, Ya.; Möslang, A.; Vladimirov, P.; Klimenkov, M.

2017-07-01

Transmission electron microscopy was used to study the effect of heavy-ion irradiation on the structure and the phase state of three oxide dispersion strengthened (ODS) steels: ODS Eurofer, ODS 13.5Cr, and ODS 13.5Cr-0.3Ti (wt %). Samples were irradiated with iron and titanium ions to fluences of 1015 and 3 × 1015 cm-2 at 300, 573, and 773 K. The study of the region of maximum radiation damage shows that irradiation increases the number density of oxide particles in all samples. The fraction of fine inclusions increases in the particle size distribution. This effect is most pronounced in the ODS 13.5Cr steel irradiated with titanium ions at 300 K to a fluence of 3 × 1015 cm-2. It is demonstrated that oxide inclusions in ODS 13.5Cr-0.3Ti and ODS 13.5Cr steels are more stable upon irradiation at 573 and 773 K than upon irradiation at 300 K.

Rutherford Backscattering Spectrometry studies of 100 keV nitrogen ion implanted polypropylene polymer

NASA Astrophysics Data System (ADS)

Chawla, Mahak; Aggarwal, Sanjeev; Sharma, Annu

2017-09-01

The effect of nitrogen ion implantation on the structure and composition in polypropylene (PP) polymer has been studied. Implantation was carried out using 100 keV N+ ions at different fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 with beam current density of ∼0.65 μA cm-2. Surface morphological changes in the pre- and post-implanted PP specimens have been studied using Rutherford Backscattering Spectrometry (RBS) and UV-Visible Spectroscopy. The spatial distribution of implantation induced modification in the form of carbonization and dehydrogenation in the near surface region of PP matrix, the projected range, retained dose of implanted nitrogen, the various elements present in the implanted layers and their differential cross-sections have been analyzed using RBS spectra. RUMP simulation yielded an increase in the concentration of carbon near the surface from 33 at.% (virgin) to 42 at.% at fluence of 1 × 1017 N+ cm-2. Further, optical absorption has been found to increase with a shift in the absorption edge from UV towards visible region with increasing fluence. UV-Vis absorption spectra also indicate a drastic decrease in optical energy gap from 4.12 eV (virgin) to 0.25 eV (1 × 1017 N+ cm-2) indicating towards the formation of carbonaceous network in the implanted region. All these changes observed using UV-Visible have been further correlated with the outcomes of the RBS characterization.

Ion irradiation induced surface modification studies of polymers using SPM

NASA Astrophysics Data System (ADS)

Tripathi, A.; Kumar, Amit; Singh, F.; Kabiraj, D.; Avasthi, D. K.; Pivin, J. C.

2005-07-01

Various types of scanning probe microscopy (SPM) techniques: atomic force microscopy (AFM) (contact and tapping in height and amplitude mode), scanning tunnelling microscopy (STM) and conducting atomic force microscopy (C-AFM) are used for studying ion beam induced surface modifications, nanostructure/cluster formation and disintegration in polymers and similar soft carbon based materials. In the present study, the results of studies on four materials, namely, (A) methyltriethoxysilane/phenyltriethoxysilane (MTES/PTES) based gel, (B) triethoxisilane (TH) based gel, (C) highly oriented pyrolytic graphite (HOPG) bulk and (D) fullerene (C60) thin films are discussed. In the case of Si based gels prepared from pre-cursors containing organic groups (MTES/PTES), hillocks are observed at the surface and their size decreases from 70 to 25 nm with increasing fluence, whereas, in the case of a gel with a stoichiometry SiO1.25H1, prepared from TH, an increases in the size of hillocks is observed. Hillocks are also formed at the surface of HOPG irradiated with 120 MeV Au beam at a low fluence, whereas, formation of craters and a re-organisation of surface features is observed at a higher fluence. In the case of C60 films, 120 MeV Au ion irradiation induces the formation of conducting ion tracks, which is attributed to the transformation from insulating C60 to conducting graphite like carbon.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Influence of Ar-ion implantation on the structural and mechanical properties of zirconia as studied by Raman spectroscopy and nanoindentation techniques

NASA Astrophysics Data System (ADS)

Kurpaska, L.; Jasinski, J.; Wyszkowska, E.; Nowakowska-Langier, K.; Sitarz, M.

2018-04-01

In this study, structural and nanomechanical properties of zirconia polymorphs induced by ion irradiation were investigated by means of Raman spectroscopy and nanoindentation techniques. The zirconia layer have been produced by high temperature oxidation of pure zirconium at 600 °C for 5 h at normal atmospheric pressure. In order to distinguish between the internal and external parts of zirconia, the spherical metallographic sections have been prepared. The samples were irradiated at room temperature with 150 keV Ar+ ions at fluences ranging from 1 × 1015 to 1 × 1017 ions/cm2. The main objective of this study was to distinguish and confirm different structural and mechanical properties between the interface layer and fully developed scale in the internal/external part of the oxide. Conducted studies suggest that increasing ion fluence impacts Raman bands positions (especially characteristic for tetragonal phase) and increases the nanohardness and Young's modulus of individual phases. This phenomenon has been examined from the point of view of stress-induced hardening effect and classical monoclinic → tetragonal (m → t) martensitic phase transformation.

Fibrous structure in GaSb surfaces irradiated with fast Cu cluster ions

NASA Astrophysics Data System (ADS)

Tsuchida, Hidetsugu; Nitta, Noriko; Yanagida, Yusuke; Okumura, Yuya; Murase, Ryu

2018-04-01

The effect of fast cluster irradiation on the formation of fibrous structures is investigated for single crystal GaSb surfaces irradiated by Cun+ ions (n = 1-3) with an energy of 0.4 MeV/atom at ion fluences up to 5 × 1015 cm-2. We study the cluster size dependence on the growth of fibrous network structures. With increasing cluster size, the shape of the fiber changed from rod-like to spherical. To quantitatively evaluate this cluster effect, a fiber diameter d in rod or spherical portion is examined as a function of ion fluence Φ and cluster size n. We find that the fiber diameter nonlinearly increases and follows the relation d ∝nα×Φ , with α≈2 . This evidently implies that the amount of defects generated by n-sized cluster bombardments varies as n2 for n ≤3 . Cluster ion irradiation enhances the defect generation owing to the overlap between cascades of individual cluster constituents and is therefore effective for the growth of nanofibers.

Channeling STIM analysis of radiation damage in single crystal diamond membrane

NASA Astrophysics Data System (ADS)

Sudić, I.; Cosic, D.; Ditalia Tchernij, S.; Olivero, P.; Pomorski, M.; Skukan, N.; Jakšić, M.

2017-08-01

The use of focused ion beam transmission channeling patterns to monitor the damage creation process in thin diamond single crystal membrane is described. A 0.8 MeV proton beam from the Ruđer Bošković Institute nuclear microprobe was used to perform Channeling Scanning Transmission Ion Microscopy (CSTIM) measurements. CSTIM was used instead of RBS channeling because of (several orders of magnitude) lower damage done to the sample during the measurements. Damage was introduced in selected areas by 15 MeV carbon beam in range of fluences 3·1015-2·1017 ions/cm2. Contrary to Ion Beam Induced Charge (IBIC), CSTIM is shown to be sensitive to the large fluences of ion beam radiation. Complementary studies of both IBIC and CSTIM are presented to show that very high fluence range can be covered by these two microprobe techniques, providing much wider information about the diamond radiation hardness. In addition micro Raman measurements were performed and the height of the GR 1 peak was correlated to the ion beam fluence.

Clustering of gold particles in Au implanted CrN thin films: The effect on the SPR peak position

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Schmidt, E.; Mitrić, M.; Bibić, N.; Rakočević, Z.; Ronning, C.

2017-12-01

We report on the formation of gold particles in 280 nm thin polycrystalline CrN layers caused by Au+ ion implantation. The CrN layers were deposited at 150 °C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 150 keV Au+ ions to fluences of 2 × 1016 cm-2 to 4.1 × 1016 cm-2. The implanted layers were analysed by the means of Rutherford backscattering spectrometry, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry measurements. The results revealed that the Au atoms are situated in the near-surface region of the implanted CrN layers. At the fluence of 2 × 1016 cm-2 the formation of Au particles of ∼200 nm in diameter has been observed. With increasing Au ion fluence the particles coalesce into clusters with dimensions of ∼1.7 μm. The synthesized particles show a strong absorption peak associated with the excitation of surface plasmon resonances (SPR). The position of the SPR peak shifted in the range of 426.8-690.5 nm when the Au+ ion fluence was varied from 2 × 1016 cm-2 to 4.1 × 1016 cm-2. A correlation of the shift in the peak wavelength caused by the change in the particles size and clustering has been revealed, suggesting that the interaction between Au particles dominate the surface plasmon resonance effect.

Post-focus expansion of ion beams for low fluence and large area MeV ion irradiation: Application to human brain tissue and electronics devices

NASA Astrophysics Data System (ADS)

Whitlow, Harry J.; Guibert, Edouard; Jeanneret, Patrick; Homsy, Alexandra; Roth, Joy; Krause, Sven; Roux, Adrien; Eggermann, Emmanuel; Stoppini, Luc

2017-08-01

Irradiation with ∼3 MeV proton fluences of 106-109 protons cm-2 have been applied to study the effects on human brain tissue corresponding to single-cell irradiation doses and doses received by electronic components in low-Earth orbit. The low fluence irradiations were carried out using a proton microbeam with the post-focus expansion of the beam; a method developed by the group of Breese [1]. It was found from electrophysiological measurements that the mean neuronal frequency of human brain tissue decreased to zero as the dose increased to 0-1050 Gy. Enhancement-mode MOSFET transistors exhibited a 10% reduction in threshold voltage for 2.7 MeV proton doses of 10 Gy while a NPN bipolar transistor required ∼800 Gy to reduce the hfe by 10%, which is consistent the expected values.

Effect of heavy ion irradiation on C 60

NASA Astrophysics Data System (ADS)

Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

1999-06-01

Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

Solar heavy ion Heinrich fluence spectrum at low earth orbit.

PubMed

Croley, D R; Spitale, G C

1998-01-01

Solar heavy ions from the JPL Solar Heavy Ion Model have been transported into low earth orbit using the Schulz cutoff criterion for L-shell access by ions of a specific charge to mass ratio. The NASA Brouwer orbit generator was used to get L values along the orbit at 60 second time intervals. Heavy ion fluences of ions 2 < or = Z < or = 92 have been determined for the LET range 1 to 130 MeV-cm2/mg by 60, 120 or 250 mils of aluminum over a period of 24 hours in a 425 km circular orbit inclined 51 degrees. The ion fluence is time dependent in the sense that the position of the spacecraft in the orbit at the flare onset time fixes the relationship between particle flux and spacecraft passage through high L-values where particles have access to the spacecraft.

Cd ion implantation in AlN

NASA Astrophysics Data System (ADS)

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

2012-10-01

AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

NASA Astrophysics Data System (ADS)

Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar Sawa, L.; De Echave, T.; Lanfant, B.; Leconte, Y.

2018-05-01

Polycrystalline β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.1015 and 1.1017 cm-2. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 1017 at.cm-2. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.

A systematic Monte Carlo study of secondary electron fluence perturbation in clinical proton beams (70-250 MeV) for cylindrical and spherical ion chambers.

PubMed

Verhaegen, F; Palmans, H

2001-10-01

Current dosimetry protocols for clinical protons do not take into account any secondary electron fluence perturbation in ion chambers. In this work, we performed a systematic study of secondary electron fluence perturbation factors for spherical and cylindrical ion chambers in proton beams (70-250 MeV). The electron fluence perturbation factor, pe, was calculated using Monte Carlo transport of protons and secondary electrons. The influence of proton energy, cavity wall material (graphite, water, A150, PMMA, polystyrene), cavity radius, cavity wall thickness and positioning depth in water is studied. The influence of inelastic nuclear proton interactions is briefly discussed. It was found that pe depends on wall material; the largest values for pe were obtained for ion chambers with A150 walls (pe=1.009), the smallest values for graphite walls. The perturbation factor was found to be largely independent of proton energy. A slight decrease of pe with cavity radius was obtained, especially for low energy protons. The wall thickness was found to have no effect on pe in the range studied (0.025-0.1 cm). The depth of the cavity in a water phantom was also found to have an insignificant effect on pe. Based on the results in the paper for spherical and cylindrical ion chambers, a method to calculate pe for a thimble ion chamber is presented. The results presented in this paper for cylindrical and spherical ion chambers are in contradiction to the calculated electron fluence perturbation factors for planar ion chambers in the paper by Casnati et al.

Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

NASA Astrophysics Data System (ADS)

Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-10-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Weilin; Jiao, Liang; Wang, Haiyan

2011-12-01

Response to irradiation of nanocrystalline 3C-SiC is studied using 2 MeV Au+ ions near the critical temperature for amorphization and is compared to the behavior of its monocrystalline counterpart under the identical irradiation conditions. The irradiated samples have been characterized using in-situ ion channeling, ex-situ x-ray diffraction, and helium ion microscopy. Compared to monocrystalline 3C-SiC, a faster amorphization process in the nanocrystalline material (average grain size = 3.3 nm) is observed at 500 K. However, the nanograin grows with increasing ion fluence at 550 K and the grain size tends to saturate at high fluences. The striking contrast demonstrates amore » sharp transition from irradiation-induced interface-driven amorphization at 500 K to crystallization at 550 K. The results could show potential impacts of nanocrystalline SiC on nuclear fuel cladding and structural components of next-generation nuclear energy systems.« less

Atomic Oxygen (ATOX) simulation of Teflon FEP and Kapton H surfaces using a high intensity, low energy, mass selected, ion beam facility

NASA Technical Reports Server (NTRS)

Vered, R.; Grossman, E.; Lempert, G. D.; Lifshitz, Y.

1994-01-01

A high intensity (greater than 10(exp 15) ions/sq cm) low energy (down to 5 eV) mass selected ion beam (MSIB) facility was used to study the effects of ATOX on two polymers commonly used for space applications (Kapton H and Teflon FEP). The polymers were exposed to O(+) and Ne(+) fluences on 10(exp 15) - 10(exp 19) ions/sq cm, using 30eV ions. A variety of analytical methods were used to analyze the eroded surfaces including: (1) atomic force microscopy (AFM) for morphology measurements; (2) total mass loss measurements using a microbalance; (3) surface chemical composition using x-ray photoelectron spectroscopy (XPS), and (4) residual gas analysis (RGA) of the released gases during bombardment. The relative significance of the collisional and chemical degradation processes was evaluated by comparing the effects of Ne(+) and O(+) bombardment. For 30 eV ions it was found that the Kapton is eroded via chemical mechanisms while Teflon FEP is eroded via collisional mechanisms. AFM analysis was found very powerful in revealing the evolution of the damage from its initial atomic scale (roughness of approx. 1 nm) to its final microscopic scale (roughness greater than 1 micron). Both the surface morphology and the average roughness of the bombarded surfaces (averaged over 1 micron x 1 micron images by the system's computer) were determined for each sample. For 30 eV a non linear increase of the Kapton roughness with the O(+) fluence was discovered (a slow increase rate for fluences phi less than 5 x 10(exp 17) O(+)/sq cm, and a rapid increase rate for phi greater than 5 x 10(exp 17) O(+)/sq cm). Comparative studies on the same materials exposed to RF and DC oxygen plasmas indicate that the specific details of the erosion depend on the simulation facility emphasizing the advantages of the ion beam facility.

Step edge sputtering yield at grazing incidence ion bombardment.

PubMed

Hansen, Henri; Polop, Celia; Michely, Thomas; Friedrich, Andreas; Urbassek, Herbert M

2004-06-18

The surface morphology of Pt(111) was investigated by scanning tunneling microscopy after 5 keV Ar+ ion bombardment at grazing incidence in dependence of the ion fluence and in the temperature range between 625 and 720 K. The average erosion rate was found to be strongly dependent on the ion fluence and the substrate temperature during bombardment. This dependence is traced back to the variation of step concentration with temperature and fluence. We develop a simple model allowing us to determine separately the constant sputtering yields for terraces and for impact area stripes in front of ascending steps. The experimentally determined yield of these stripes--the step-edge sputtering yield--is in excellent agreement with our molecular dynamics simulations performed for the experimental situation.

On the origin of increased sensitivity and mass resolution using silicon masks in MALDI.

PubMed

Diologent, Laurent; Franck, Julien; Wisztorski, Maxence; Treizebre, Anthony; Focsa, Cristian; Fournier, Isabelle; Ziskind, Michael

2014-02-04

Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one way to improve sensitivity by increasing ion transmission and using more sensitive detection systems. On the other side, improving MALDI ion production yields would have important outcomes. MALDI ion production is still not well-controlled and, indeed, the amount of ions produced per laser shot with respect to the total volume of desorbed material is very low. This has particular implications for certain applications, such as MALDI MS imaging where laser beam focusing as fine as possible (5-10 μm) is searched in order to reach higher spatial resolution images. However, various studies point out an intrinsic decrease in signal intensity for strong focusing. We have therefore been interested in developing silicon mask systems to decrease an irradiated area by cutting rather than focusing the laser beam and to study the parameters affecting sensitivity using such systems. For this, we systematically examined variation with laser fluence of intensity and spectral resolution in MALDI of standard peptides when using silicon-etched masks of various aperture sizes. These studies demonstrate a simultaneous increase in spectral resolution and signal intensity. Origin of this effect is discussed in the frame of the two-step ionization model. Experimental data in the low fluence range are fitted with an increase of the primary ionization through matrix-silicon edge contact provided by the masks. On the other hand, behavior at higher fluence could be explained by an effect on the secondary ionization via changes in the plume dynamics.

Silver-gold alloy nanoparticles as tunable substrates for systematic control of ion-desorption efficiency and heat transfer in surface-assisted laser desorption/ionization.

PubMed

Lai, Samuel Kin-Man; Cheng, Yu-Hong; Tang, Ho-Wai; Ng, Kwan-Ming

2017-08-09

Systematically controlling heat transfer in the surface-assisted laser desorption/ionization (SALDI) process and thus enhancing the analytical performance of SALDI-MS remains a challenging task. In the current study, by tuning the metal contents of Ag-Au alloy nanoparticle substrates (AgNPs, Ag55Au45NPs, Ag15Au85NPs and AuNPs, ∅: ∼2.0 nm), it was found that both SALDI ion-desorption efficiency and heat transfer can be controlled in a wide range of laser fluence (21.3 mJ cm -2 to 125.9 mJ cm -2 ). It was discovered that ion detection sensitivity can be enhanced at any laser fluence by tuning up the Ag content of the alloy nanoparticle, whereas the extent of ion fragmentation can be reduced by tuning up the Au content. The enhancement effect of Ag content on ion desorption was found to be attributable to the increase in laser absorption efficiency (at 355 nm) with Ag content. Tuning the laser absorption efficiency by changing the metal composition was also effective in controlling the heat transfer from the NPs to the analytes. The laser-induced heating of Ag-rich alloy NPs could be balanced or even overridden by increasing the Au content of NPs, resulting in the reduction of the fragmentation of analytes. In the correlation of experimental measurement with molecular dynamics simulation, the effect of metal composition on the dynamics of the ion desorption process was also elucidated. Upon increasing the Ag content, it was also found that phase transition temperatures, such as melting, vaporization and phase explosion temperature, of NPs could be reduced. This further enhanced the desorption of analyte ions via phase-transition-driven desorption processes. The significant cooling effect on the analyte ions observed at high laser fluence was also determined to be originated from the phase explosion of the NPs. This study revealed that the development of alloy nanoparticles as SALDI substrates can constitute an effective means for the systematic control of ion-desorption efficiency and the extent of heat transfer, which could potentially enhance the analytical performance of SALDI-MS.

Structural evaluation of reduced graphene oxide in graphene oxide during ion irradiation: X-ray absorption spectroscopy and in-situ sheet resistance studies

NASA Astrophysics Data System (ADS)

Saravanan, K.; Jayalakshmi, G.; Suresh, K.; Sundaravel, B.; Panigrahi, B. K.; Phase, D. M.

2018-03-01

We report the structural evolution of reduced graphene oxide (rGO) in graphene oxide (GO) flakes during 1 MeV Si+ ion irradiation. In-situ electrical resistivity measurements facilitate monitoring the sheet resistance with the increase in the fluence. The electrical sheet resistance of the GO flake shows the exponential decay behaviour with the increasing ion fluence. Raman spectra of the GO flake reveal the increase in the ID/IG ratio, indicating restoration of the sp2 network upon irradiation. The C/O ratio estimated from resonant Rutherford backscattering spectrometry analysis directly evidenced the reduction of oxygen moieties upon irradiation. C K-edge X-ray absorption near edge structure spectra reveal the restoration of C=C sp2-hybridized carbon atoms and the removal of oxygen-containing functional groups in the GO flake. STM data reveal the higher conductance in the rGO regime in comparison with the regime, where the oxygen functional groups are present. The experimental investigation demonstrates that the ion irradiation can be employed for efficient reduction of GO with tunable electrical and structural properties.

Effect of high energy ions on the electrical and morphological properties of Poly(3-Hexylthiophene) (P3HT) thin film

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, R.; Vishnoi, R.; Sharma, G. D.; Biswas, S. K.

2018-05-01

The spin-coated thin films of Poly(3-Hexylthiophene) (P3HT) on the glass and Si (double side polished) substrates have been irradiated with 55 MeV Si+4 swift heavy ions (SHI) at fluences in the range from 1 × 1010 to 1 × 1012 ions/cm2. Structural modifications produced by energetic ions are observed by characterization of pristine and irradiated P3HT thin films. Different techniques like high-resolution X-ray diffraction (HR-XRD), micro-Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR) were used to analyze the structural changes in the material. A significant increase in crystallinity and room temperature electrical conductivity of P3HT film has been detected on exposure to the heavy ions. The observed increase in the electrical conductivity with increased fluences is explained in the light of improved ordering of polymer chains after irradiation. Mott's variable range hopping model has been used to explain the conduction mechanism in the material in the temperature range of 230-350 K. The modification in surface properties also observed using AFM analysis and contact angle measurement. It is observed that nature of the P3HT thin films remains hydrophobic after irradiation.

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

NASA Technical Reports Server (NTRS)

Javanainen, Arto; Galloway, Kenneth F.; Nicklaw, Christopher; Bosser, Alexandre L.; Ferlet-Cavrois, Veronique; Lauenstein, Jean-Marie; Pintacuda, Francesco; Reed, Robert A.; Schrimpf, Ronald D.; Weller, Robert A.;

Swift heavy ion induced structural and luminescence characterization of Y₂O₃:Eu³⁺ phosphor: a comparative study.

PubMed

Som, S; Sharma, S K; Lochab, S P

2014-08-01

We report a comparative study on structural and thermoluminescence modifications of Y2O3:Eu(3+) phosphor induced by 150 MeV Ni(7+), 120 MeV Ag(9+) and 110 MeV Au(8+) swift heavy ions (SHI) in the fluence range 1 × 10(11) to 1 × 10(13) ions/cm(2). X-Ray diffraction and transition electron microscopy studies confirm the loss of crystallinity of the phosphors after ion irradiation, which is greater in the case of Au ion irradiation. Structural refinement using the Rietveld method yields the various structural parameters of ion-irradiated phosphors. Thermoluminescence glow curves of ion-irradiated phosphors show a small shift in the position of the peaks, along with an increase in intensity with ion fluence. Stopping range of ions in Matter (SRIM) calculations were performed to correlate the change in thermoluminescence properties of various ion-irradiated phosphors. It shows that the defects created by 110 MeV Au(8+) ions are greater in number. Trapping parameters of ion-irradiated phosphors were calculated from thermoluminescence data using various glow curve analysis methods. Copyright © 2013 John Wiley & Sons, Ltd.

TiO2 films photocatalytic activity improvements by swift heavy ions irradiation

NASA Astrophysics Data System (ADS)

Rafik, Hazem; Mahmoud, Izerrouken; Mohamed, Trari; Abdenacer, Benyagoub

2014-08-01

TiO2 thin films synthesized by sol-gel on glass substrates are irradiated by 90 MeV Xe ions at various fluences and room temperature under normal incidence. The structural, electrical, optical and surface topography properties before and after Xe ions irradiation are investigated. X-ray diffraction (XRD) reveals that the crystallinity is gradually destroyed, and the films become amorphous above 5×1012 ions/cm2. The band gap is not affected by Xe ions irradiation as evidenced from the optical measurements. By contrast, the conductivity increases with raising Xe fluence. The energy band diagram established from the electrochemical characterization shows the feasibility of TiO2 films for the photo-electrochemical chromate reduction. Xe ion irradiation results in enhanced photocatalytic activity in aquatic medium, evaluated by the reduction of Cr(VI) into trivalent state. TiO2 films irradiated at 1013 Xe/cm2 exhibit the highest photoactivity; 69% of chromate (10 ppm) is reduced at pH 3 after 4 h of exposure to sunlight (1120 mW cm-2) with a quantum yield of 0.06%.

Nanocomposite synthesis and photoluminescence properties of MeV Au-ion beam modified Ni thin films

NASA Astrophysics Data System (ADS)

Siva, Vantari; Datta, Debi P.; Singh, Avanendra; Som, T.; Sahoo, Pratap K.

2016-01-01

We report on the synthesis and properties of nano-composites from thin Ni films on Silica matrix using Au-ion beam. When 2.2 MeV Au-ions are irradiated on 5 nm Ni film on Silica, the surface morphology changes drastically with ion fluence. In fact, within a fluence range of 5 × 1014-1 × 1016 ions/cm2, a sharp increase in surface roughness follows after an initial surface smoothening. The depth profiles extracted from Rutherford backscattering spectra demonstrates the diffusion of Ni and Au into the silica matrix. The photoluminescence spectra of the irradiated samples reveal the development of two bands centered at 3.3 eV and 2.66 eV, respectively. Deconvolution of those bands shows five different emission peaks, corresponding to different luminescence centers, which confirms the existence of Ni-Au nanocomposites in silica matrix. The optical and structural modifications are understood in terms of ion induced local heating and mass transport due to thermal spikes, which leads to nanocomposite formation in silica.

Complex damage distribution behaviour in cobalt implanted rutile TiO2 (1 1 0) lattice

NASA Astrophysics Data System (ADS)

Joshi, Shalik Ram; Padmanabhan, B.; Chanda, Anupama; Ojha, Sunil; Kanjilal, D.; Varma, Shikha

2017-11-01

The present work investigates the radiation damage, amorphization and structural modifications that are produced by ion-solid interactions in TiO2 crystals during 200 keV Cobalt ion implantation. RBS/C and GIXRD have been utilized to evaluate the damage in the host lattice as a function of ion fluence. Multiple scattering formalism has been applied to extract the depth dependent damage distributions in TiO2(1 1 0). The results have been compared with the MC simulations performed using SRIM-2013. RBS/C results delineate a buried amorphous layer at a low fluence. Surprisingly, ion induced dynamic activation produces a recovery in this damage at higher fluences. This improvement interestingly occurs only in deep regions (60-300 nm) where a systematic lowering in damage with fluence is observed. Formation of Co-Ti-O phases and generation of stress in TiO2 lattice can also be responsible for this improvement in deep regions. In contrast, surface region (0-60 nm) indicates a gradual increase in damage with fluence. Such a switch in the damage behavior creates a cross point in damage profiles at 60 nm. Surface region is a sink of vacancies whereas deep layers are interstitial rich. However, these regions are far separated from each other resulting in an intermediate (100-150 nm) region with a significant dip (valley) in damage which can be characterized by enhanced recombination of point defects. The damage profiles thus indicate a very complex behavior. MC simulations, however, present very different results. They depict a damage profile that extends to a depth of only 150 nm, which is only about half of the damage- width observed here via RBS/C. Moreover, MC simulations do not indicate presence of any valley like structure in the damage profile. The complex nature of damage distribution observed here via RBS/C may be related to the high ionic nature of the chemical bonds in the TiO2 lattice.

Accurate on line measurements of low fluences of charged particles

NASA Astrophysics Data System (ADS)

Palla, L.; Czelusniak, C.; Taccetti, F.; Carraresi, L.; Castelli, L.; Fedi, M. E.; Giuntini, L.; Maurenzig, P. R.; Sottili, L.; Taccetti, N.

2015-03-01

Ion beams supplied by the 3MV Tandem accelerator of LABEC laboratory (INFN-Firenze), have been used to study the feasibility of irradiating materials with ion fluences reproducible to about 1%. Test measurements have been made with 7.5 MeV 7Li2+ beams of different intensities. The fluence control is based on counting ions contained in short bursts generated by chopping the continuous beam with an electrostatic deflector followed by a couple of adjustable slits. Ions are counted by means of a micro-channel plate (MCP) detecting the electrons emitted from a thin layer of Al inserted along the beam path in between the pulse defining slits and the target. Calibration of the MCP electron detector is obtained by comparison with the response of a Si detector.

Surface modification and deuterium retention in reduced-activation steels under low-energy deuterium plasma exposure. Part II: steels pre-damaged with 20 MeV W ions and high heat flux

NASA Astrophysics Data System (ADS)

Ogorodnikova, O. V.; Zhou, Z.; Sugiyama, K.; Balden, M.; Pintsuk, G.; Gasparyan, Yu.; Efimov, V.

2017-03-01

The reduced-activation ferritic/martensitic (RAFM) steels including Eurofer (9Cr) and oxide dispersion strengthened (ODS) steels by the addition of Y2O3 particles investigated in Part I were pre-damaged either with 20 MeV W ions at room temperature at IPP (Garching) or with high heat flux at FZJ (Juelich) and subsequently exposed to low energy (~20-200 eV per D) deuterium (D) plasma up to a fluence of 2.9  ×  1025 D m-2 in the temperature range from 290 K to 700 K. The pre-irradiation with 20 MeV W ions at room temperature up to 1 displacement per atom (dpa) has no noticeable influence on the steel surface morphology before and after the D plasma exposure. The pre-irradiation with W ions leads to the same concentration of deuterium in all kinds of investigated steels, regardless of the presence of nanoparticles and Cr content. It was found that (i) both kinds of irradiation with W ions and high heat flux increase the D retention in steels compared to undamaged steels and (ii) the D retention in both pre-damaged and undamaged steels decreases with a formation of surface roughness under the irradiation of steels with deuterium ions with incident energy which exceeds the threshold of sputtering. The increase in the D retention in RAFM steels pre-damaged either with W ions (damage up to ~3 µm) or high heat flux (damage up to ~10 µm) diminishes with increasing the temperature. It is important to mention that the near surface modifications caused by either implantation of high energy ions or a high heat flux load, significantly affect the total D retention at low temperatures or low fluences but have a negligible impact on the total D retention at elevated temperatures and high fluences because, in these cases, the D retention is mainly determined by bulk diffusion.

Au5+ ion implantation induced structural phase transitions probed through structural, microstructural and phonon properties in BiFeO3 ceramics, using synergistic ion beam energy

NASA Astrophysics Data System (ADS)

Dey, Ranajit; Bajpai, P. K.

2018-04-01

Implanted Au5+-ion-induced modification in structural and phonon properties of phase pure BiFeO3 (BFO) ceramics prepared by sol-gel method was investigated. These BFO samples were implanted by 15.8 MeV ions of Au5+ at various ion fluence ranging from 1 × 1014 to 5 × 1015 ions/cm2. Effect of Au5+ ions' implantation is explained in terms of structural phase transition coupled with amorphization/recrystallization due to ion implantation probed through XRD, SEM, EDX and Raman spectroscopy. XRD patterns show broad diffuse contributions due to amorphization in implanted samples. SEM images show grains collapsing and mounds' formation over the surface due to mass transport. The peaks of the Raman spectra were broadened and also the peak intensities were decreased for the samples irradiated with 15.8 MeV Au5+ ions at a fluence of 5 × 1015 ion/cm2. The percentage increase/decrease in amorphization and recrystallization has been estimated from Raman and XRD data, which support the synergistic effects being operative due to comparable nuclear and electronic energy losses at 15.8 MeV Au5+ ion implantation. Effect of thermal treatment on implanted samples is also probed and discussed.

A HiPIMS plasma source with a magnetic nozzle that accelerates ions: application in a thruster

NASA Astrophysics Data System (ADS)

Bathgate, Stephen N.; Ganesan, Rajesh; Bilek, Marcela M. M.; McKenzie, David R.

2017-01-01

We demonstrate a solid fuel electrodeless ion thruster that uses a magnetic nozzle to collimate and accelerate copper ions produced by a high power impulse magnetron sputtering discharge (HiPIMS). The discharge is initiated using argon gas but in a practical device the consumption of argon could be minimised by exploiting the self-sputtering of copper. The ion fluence produced by the HiPIMS discharge was measured with a retarding field energy analyzer (RFEA) as a function of the magnetic field strength of the nozzle. The ion fraction of the copper was determined from the deposition rate of copper as a function of substrate bias and was found to exceed 87%. The ion fluence and ion energy increased in proportion with the magnetic field of the nozzle and the energy of the ions was found to follow a Maxwell-Boltzmann distribution with a directed velocity. The effectiveness of the magnetic nozzle in converting the randomized thermal motion of the ions into a jet was demonstrated from the energy distribution of the ions. The maximum ion exhaust velocity of at least 15.1 km/s, equivalent to a specific impulse of 1543 s was measured which is comparable to existing Hall thrusters and exceeds that of Teflon pulsed plasma thrusters.

Radiation damage studies of soft magnetic metallic glasses irradiated with high-energy heavy ions

NASA Astrophysics Data System (ADS)

Pavlovič, Márius; Miglierini, Marcel; Mustafin, Edil; Ensinger, Wolfgang; Šagátová, Andrea; Šoka, Martin

2015-01-01

Some soft magnetic metallic glasses are considered for use in magnetic cores of accelerator radio frequency cavities. Due to losses of the circulating ion beam, they may be exposed to irradiation by different ions at different energies. This paper presents data and review results of irradiation experiments concerning the influence of high-energy heavy ions on magnetic susceptibility of VITROPERM®-type metallic glasses. Samples of the VITROPERM® magnetic ribbons were irradiated by Au, Xe and U ions at 11.1 MeV/A (per nucleon) and 5.9 MeV/A, respectively. Irradiation fluences from 1 × 1011 up to 1 × 1013 ions/cm2 were applied. In case of the Au and U ions, the total fluence was accumulated in one beamtime, whereas two separate beamtimes were used to accumulate the final fluence in case of the Xe ions. Relative change in the samples' magnetic susceptibility after and before irradiation was evaluated as a function of the irradiation fluence. The irradiation experiments were performed with the UNILAC accelerator at GSI Helmholtzzentrum für Schwerionenforschung GmbH. They were simulated in SRIM2010 in order to obtain ionization densities (electronic stopping, dE/dx) and dpa (displacements per atom) caused by the ion beams in the sample material. This paper focuses mainly on the results collected in experiments with the Xe ions and compares them with data obtained in earlier experiments using Au and U ions. Radiation hardness of VITROPERM® is compared with radiation hardness of VITROVAC® that was studied in previous experiments. The VITROPERM® samples showed less drop in magnetic susceptibility in comparison with the VITROVAC® ones, and this drop occurred at higher fluences. This indicates higher radiation hardness of VITROPERM® compared with VITROVAC®. In addition, heavier ions cause bigger change in magnetic susceptibility than the lighter ones. The effect can be roughly scaled with electronic stopping, which suggests that the main mechanism of radiation damage is associated with swift electrons generated in the material via ionization by primary heavy ions.

Ion irradiation of ternary pyrochlore oxides.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumpkin, G. R.; Smith, K. L.; Blackford, M. G.

2009-05-01

Polycrystalline synthetic samples of Y{sub 2}Ti{sub 2-x}Sn{sub x}O{sub 7} with x = 0.4, 0.8, 1.2, and 1.6, together with Nd{sub 2}Zr{sub 2}O{sub 7}, Nd{sub 2}Zr{sub 1.2}Ti{sub 0.8}O{sub 7}, and La{sub 1.6}Y{sub 0.4}Hf{sub 2}O{sub 7}, were irradiated in situ in the intermediate voltage electron microscope (IVEM)-Tandem Facility at Argonne National Laboratory using 1.0 MeV Kr ions at temperatures of 50 to 650 K. Determination of the critical amorphization fluence (F{sub c}) as a function of temperature has revealed a dramatic increase in radiation tolerance with increasing Sn content on the pyrochlore B site. Nonlinear least-squares analysis of the fluence-temperature curves gavemore » critical temperatures (T{sub c}) of 666 {+-} 4, 335 {+-} 12, and 251 {+-} 51 K for the Y{sub 2}Ti{sub 2-x}Sn{sub x}O{sub 7} samples with x = 0.4, 0.8, and 1.2, respectively. The sample with x = 1.6 appears to disorder to a defect fluorite structure at a fluence below 1.25 x 10{sup 15} ions cm{sup -2} and remains crystalline to 5 x 10{sup 15} ions cm{sup -2} at 50 K. Additionally, the critical fluence-temperature response curves were determined for Nd{sub 2}Zr{sub 1.2}Ti{sub 0.8}O{sub 7} and La{sub 1.6}Y{sub 0.4}Hf{sub 2}O{sub 7}, and we obtained T{sub c} values of 685 {+-} 53 K and 473 {+-} 52 K, respectively, for these pyrochlores. Nd{sub 2}Zr{sub 2}O{sub 7} did not become amorphous after a fluence of 2.5 x 10{sup 15} ions cm{sup -2} at 50 K, but there is evidence that it may amorphize at a higher fluence, with an estimated T{sub c} of 135 K. The observed T{sub c} results are discussed with respect to the predicted T{sub c} values based upon a previously published empirical model (Lumpkin, G. R.; Pruneda, M.; Rios, S.; Smith, K. L.; Trachenko, K.; Whittle, K. R.; Zaluzec, N. J. J. Solid State Chem. 2007, 180, 1512). In the Y{sub 2}Ti{sub 2-x}Sn{sub x}O{sub 7} pyrochlores, T{sub c} appears to be linear with respect to composition, and is linear with respect to r{sub A}/r{sub B} and x(48f) for all samples investigated herein.« less

Laser-ablation-based ion source characterization and manipulation for laser-driven ion acceleration

NASA Astrophysics Data System (ADS)

Sommer, P.; Metzkes-Ng, J.; Brack, F.-E.; Cowan, T. E.; Kraft, S. D.; Obst, L.; Rehwald, M.; Schlenvoigt, H.-P.; Schramm, U.; Zeil, K.

2018-05-01

For laser-driven ion acceleration from thin foils (∼10 μm–100 nm) in the target normal sheath acceleration regime, the hydro-carbon contaminant layer at the target surface generally serves as the ion source and hence determines the accelerated ion species, i.e. mainly protons, carbon and oxygen ions. The specific characteristics of the source layer—thickness and relevant lateral extent—as well as its manipulation have both been investigated since the first experiments on laser-driven ion acceleration using a variety of techniques from direct source imaging to knife-edge or mesh imaging. In this publication, we present an experimental study in which laser ablation in two fluence regimes (low: F ∼ 0.6 J cm‑2, high: F ∼ 4 J cm‑2) was applied to characterize and manipulate the hydro-carbon source layer. The high-fluence ablation in combination with a timed laser pulse for particle acceleration allowed for an estimation of the relevant source layer thickness for proton acceleration. Moreover, from these data and independently from the low-fluence regime, the lateral extent of the ion source layer became accessible.

Anisotropic proton-conducting membranes prepared from swift heavy ion-beam irradiated ETFE films

NASA Astrophysics Data System (ADS)

Kimura, Yosuke; Chen, Jinhua; Asano, Masaharu; Maekawa, Yasunari; Katakai, Ryoichi; Yoshida, Masaru

2007-10-01

Poly(ethylene-co-tetrafluoroethylene) (ETFE) films were irradiated by swift heavy ion-beams of 129Xe 23+ with fluences of 0, 3 × 10 6, 3 × 10 7, 3 × 10 8 and 3 × 10 9 ions/cm 2, followed by γ-ray pre-irradiation for radiation grafting of styrene onto the ETFE films and sulfonation of the grafted ETFE films to prepare highly anisotropic proton-conducting membranes. The fluence of Xe ions and the addition of water in the grafting solvent were examined to determine their effect on the proton conductivity of the resultant membranes. It was found that the polymer electrolyte membrane prepared by grafting the styrene monomer in a mixture of 67% isopropanol and 33% water to the ETFE film with an ion-beam irradiation fluence of 3.0 × 10 6 ions/cm 2 was a highly anisotropic proton-conducting material, as the proton conductivity was three or more times higher in the thickness direction than in the surface direction of the membrane.

Structure and radiation effect of Er-stuffed pyrochlore Er2(Ti2-xErx)O7-x/2 (x = 0-0.667)

NASA Astrophysics Data System (ADS)

Yang, D. Y.; Xu, C. P.; Fu, E. G.; Wen, J.; Liu, C. G.; Zhang, K. Q.; Wang, Y. Q.; Li, Y. H.

2015-08-01

Er-stuffed pyrochlore series Er2(Ti2-xErx)O7-x/2 (x = 0, 0.162, 0.286, 0.424 and 0.667) were synthesized using conventional ceramic processing procedures. The structure of Er2(Ti2-xErx)O7-x/2 is effectively tailored by the Er stuffing level (x). In order to study the radiation effect of Er-stuffed pyrochlores, irradiation experiments were performed with 400 keV Ne2+ ions to fluences ranging from 5 × 1014 to 3.0 × 1015 ions/cm2 at cryogenic condition. Irradiation induced microstructural evolution was examined using a grazing incidence X-ray diffraction technique. It is found that the irradiated layer of Er2(Ti2-xErx)O7-x/2 undergoes significant lattice disordering and swelling at fluences of ⩽1.5 × 1015 ions/cm2 and amorphization at fluences of ⩾1.5 × 1015 ions/cm2. The radiation effect depends strongly on the chemical compositions of the samples. Both the lattice swelling percentage and the amorphous fraction decrease with increasing x. The experimental results are discussed in the context of cation antisite defect. The defect formation energy which varies as a function of x is responsible for the difference in the structural behaviors of Er2(Ti2-xErx)O7-x/2 under 400 keV Ne2+ ion irradiation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alkhaldi, H. S.; Department of Physics in Jubail Education college, Dammam University, Dammam 1982; Kremer, F.

The development of porosity in single-crystal germanium and silicon-germanium alloys (c-Si{sub 1−x} Ge{sub x}) of (100) orientation was studied under bombardment with 140 keV Ge{sup −} ions over a wide range of temperatures (−180 to 400 °C) and ion fluences up to 1 × 10{sup 18} ions/cm{sup 2}. The surface swelling and morphology were investigated using multi-characterization techniques including optical profilometry, transmission electron microscopy, and scanning electron microscopy. The initiation of porosity and the evolution of the near-surface microstructure strongly depend on the ion fluence, the irradiation temperature, and the stoichiometry of the substrate. Significant results and new findings include: (i) the fact that,more » over the entire temperature and stoichiometry range, porosity is only developed once the substrate is rendered amorphous; (ii) with increasing Si content in the alloy, the onset of porosity is pushed to higher fluences; (iii) porosity is observed for Si contents in the alloy up to 23% but not higher under the irradiation conditions used; and (iv) in all cases the initiation of porosity was observed to occur at the surface of the amorphous alloy above a threshold fluence. This last result strongly suggests that the mechanism for initiation of porosity is via preferential vacancy segregation and clustering at the surface of the amorphous alloy. Particularly at elevated temperatures, preferential sputtering of the Si-Ge atomic species in the alloy also plays an important role in developing the surface topography and porosity in alloys. Such effects are discussed along with the implications of our results for mechanisms of porosity in Ge and its alloys.« less

Optical and structural properties of 100 MeV Fe{sup 9+} ion irradiated InP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dubey, R. L., E-mail: radhekrishna.dubey@xaviers.edu; Department of Physics, University of Mumbai, Mumbai-400 032; Dubey, S. K.

2016-05-06

Single crystal InP samples were irradiated with 100 MeV Fe{sup 9+} ions for ion fluences 1x10{sup 12} and 1x10{sup 13} cm{sup −2}. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease inmore » the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.« less

Sensitivity in MALDI MS with small spot sizes

NASA Astrophysics Data System (ADS)

Yamchuk, Andriy

In MALDI, for laser fluences below the saturation point the ion yield per shot follows a cubic dependence on the irradiated area, leading to a conclusion that smaller spots produce overall less ions and therefore are less viable. However, Qiao et al. showed that by decreasing the laser spot size it is possible to raise the saturation point, and thus increase the ion yield per unit area, also known as sensitivity. Here we explore laser spots below 10 micrometer diameter to determine whether they offer any practical advantage. We show that sensitivity is greater for a flat-top 3--4 micrometer spot than for a 10 micrometer spot. The sensitivity is greater for a Gaussian-like 3--5 micrometer spot than for flat-top 5--25 micrometer spots. We also report for the first time sensitivity versus theoretical fluence profile for a Gaussian-like beam focu

Studies on the high electronic energy deposition in polyaniline thin films

NASA Astrophysics Data System (ADS)

Deshpande, N. G.; Gudage, Y. G.; Vyas, J. C.; Singh, F.; Sharma, Ramphal

2008-05-01

We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au7+ ion of 100 MeV energy at different fluences, namely, 5 × 1011 ions/cm2 and 5 × 1012 ions/cm2, respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique.

Quasi-monoenergetic ion generation by hole-boring radiation pressure acceleration in inhomogeneous plasmas using tailored laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weng, S. M., E-mail: weng-sm@ile.osaka-u.ac.jp; Murakami, M.; Azechi, H.

It is proposed that laser hole-boring at a steady speed in inhomogeneous overdense plasma can be realized by the use of temporally tailored intense laser pulses, producing high-fluence quasi-monoenergetic ion beams. A general temporal profile of such laser pulses is formulated for arbitrary plasma density distribution. As an example, for a precompressed deuterium-tritium fusion target with an exponentially increasing density profile, its matched laser profile for steady hole-boring is given theoretically and verified numerically by particle-in-cell simulations. Furthermore, we propose to achieve fast ignition by the in-situ hole-boring accelerated ions using a tailored laser pulse. Simulations show that the effectivemore » energy fluence, conversion efficiency, energy spread, and collimation of the resulting ion beam can be significantly improved as compared to those found with un-tailored laser profiles. For the fusion fuel with an areal density of 1.5 g cm{sup –2}, simulation indicates that it is promising to realize fast ion ignition by using a tailored driver pulse with energy about 65 kJ.« less

DLTS and in situ C-V analysis of trap parameters in swift 50 MeV Li3+ ion-irradiated Ni/SiO2/Si MOS capacitors

NASA Astrophysics Data System (ADS)

Shashank, N.; Singh, Vikram; Gupta, Sanjeev K.; Madhu, K. V.; Akhtar, J.; Damle, R.

2011-04-01

Ni/SiO2/Si MOS structures were fabricated on n-type Si wafers and were irradiated with 50 MeV Li3+ ions with fluences ranging from 1×1010 to 1×1012 ions/cm2. High frequency C-V characteristics are studied in situ to estimate the build-up of fixed and oxide charges. The nature of the charge build-up with ion fluence is analyzed. Defect levels in bulk Si and its properties such as activation energy, capture cross-section, trap concentration and carrier lifetimes are studied using deep-level transient spectroscopy. Electron traps with energies ranging from 0.069 to 0.523 eV are observed in Li ion-irradiated devices. The dependence of series resistance, substrate doping and accumulation capacitance on Li ion fluence are clearly explained. The study of dielectric properties (tan δ and quality factor) confirms the degradation of the oxide layer to a greater extent due to ion irradiation.

Cole-cole analysis and electrical conduction mechanism of N{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak; Shekhawat, Nidhi; Aggarwal, Sanjeev, E-mail: write2sa@gmail.com

2014-05-14

In this paper, we present the analysis of the dielectric (dielectric constant, dielectric loss, a.c. conductivity) and electrical properties (I–V characteristics) of pristine and nitrogen ion implanted polycarbonate. The samples of polycarbonate were implanted with 100 keV N{sup +} ions with fluence ranging from 1 × 10{sup 15} to 1 × 10{sup 17} ions cm{sup −2}. The dielectric measurements of these samples were performed in the frequency range of 100 kHz to 100 MHz. It has been observed that dielectric constant decreases whereas dielectric loss and a.c. conductivity increases with increasing ion fluence. An analysis of real and imaginary parts of dielectric permittivity has beenmore » elucidated using Cole-Cole plot of the complex permittivity. With the help of Cole-Cole plot, we determined the values of static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}), and molecular relaxation time (τ). The I–V characteristics were studied using Keithley (6517) electrometer. The electrical conduction behaviour of pristine and implanted polycarbonate specimens has been explained using various models of conduction.« less

Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaabane, Nihed; Debelle, Aurelien; Sattonnay, Gael

2012-01-01

Single crystals of 6H-SiC were irradiated at room temperature and 670 K with 4 MeV C ions at two fluences: 1015 and 1016 cm2 (0.16 and 1.6 dpa at the damage peak). Damage accumulation was studied by a combination of X-ray diffraction (XRD), Raman spectroscopy and Rutherford backscattering spectrometry in channelling geometry (RBS/C) along the [0001] direction. The irradiated layer is found to be composed of a low damage region up to 1.5 lm followed by a region where the disorder level is higher, consistent with SRIM predictions. At room temperature and low fluence, typically 1015 cm2, the strain depthmore » profile follows the dpa depth distribution (with a maximum value of 2%). The disorder is most likely due to small defect clusters. When increasing the fluence up to 1016 cm2, a buried amorphous layer forms, as indicated by e.g. Raman results where the Si C bands become broader or even disappear. At a higher irradiation temperature of 670 K, amorphization is not observed at the same fluence, revealing a dynamic annealing process. However, results tend to suggest that the irradiated layer is highly heterogeneous and composed of different types of defects.« less

High surface stability of magnetite on bi-layer Fe3O4/Fe/MgO(0 0 1) films under 1 MeV Kr+ ion irradiation

NASA Astrophysics Data System (ADS)

Kim-Ngan, N.-T. H.; Krupska, M.; Balogh, A. G.; Malinsky, P.; Mackova, A.

2017-12-01

We investigate the stability of the bi-layer Fe3O4/Fe(0 0 1) films grown epitaxially on MgO(0 0 1) substrates with the layer thickness in the range of 25-100 nm upon 1 MeV Kr+ ion irradiation. The layer structure and layer composition of the films before and after ion irradiation were studied by XRR, RBS and RBS-C techniques. The interdiffusion and intermixing was analyzed. No visible change in the RBS spectra was observed upon irradiation with ion fluence below 1015 Kr cm-2. The bi-layer structure and the stoichiometric Fe3O4 layer on the surface were well preserved after Kr+ ion irradiation at low damage levels, although the strong intermixing implied a large interfacial (Fe x O y ) and (Fe, Mg)O y layer respective at Fe3O4-Fe and Fe-MgO interface. The high ion fluence of 3.8  ×  1016 Kr cm-2 has induced a complete oxidization of the buffer Fe layer. Under such Kr fluence, the stoichiometry of the Fe3O4 surface layer was still preserved indicating its high stability. The entire film contains Fe x O y -type composition at ion fluence large than 5.0  ×  1016 Kr cm-2.

Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

NASA Astrophysics Data System (ADS)

Mosberg, A. B.; Myklebost, S.; Ren, D.; Weman, H.; Fimland, B. O.; van Helvoort, A. T. J.

2017-09-01

To efficiently evaluate the novel approach of focused ion beam (FIB) direct patterning of substrates for nanowire growth, a reference matrix of hole arrays has been used to study the effect of ion fluence and hole diameter on nanowire growth. Self-catalyzed GaAsSb nanowires were grown using molecular beam epitaxy and studied by scanning electron microscopy (SEM). To ensure an objective analysis, SEM images were analyzed with computer vision to automatically identify nanowires and characterize each array. It is shown that FIB milling parameters can be used to control the nanowire growth. Lower ion fluence and smaller diameter holes result in a higher yield (up to 83%) of single vertical nanowires, while higher fluence and hole diameter exhibit a regime of multiple nanowires. The catalyst size distribution and placement uniformity of vertical nanowires is best for low-value parameter combinations, indicating how to improve the FIB parameters for positioned-controlled nanowire growth.

Use of a Gafchromic film HD-V2 for the profile measurement of energetic ion beams

NASA Astrophysics Data System (ADS)

Yuri, Yosuke; Ishizaka, Tomohisa; Agematsu, Takashi; Yuyama, Takahiro; Seito, Hajime; Okumura, Susumu

2017-09-01

The coloration response of a radiochromic film, Gafchromic HD-V2, to ion beams was investigated to apply the film to measuring the transverse intensity distribution of large-area ion beams. HD-V2 films were, therefore, irradiated with proton (10 MeV) and several heavy-ion (4.1-27 MeV/u) beams in a wide fluence range at the azimuthally-varying-field cyclotron facility in National Institutes for Quantum and Radiological Science and Technology, and read with an image scanner to analyze changes in the optical density. It was shown that the available fluence range (106-1011 ions/cm2) of HD-V2 depends strongly on ion species, i.e., linear energy transfer (LET). In addition, the reduction of the sensitivity to dose was shown over a wide LET range. The transverse intensity distribution of a large-area ion beam was measured using a response function determined from the measured data. We have demonstrated that the Gafchromic film HD-V2 is useful for measuring the intensity distribution at a low fluence and thus evaluating the characteristics of various ion beams.

Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.

2016-12-01

Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

Target Plate Material Influence on Fullerene-C60 Laser Desorption/Ionization Efficiency

NASA Astrophysics Data System (ADS)

Zeegers, Guido P.; Günthardt, Barbara F.; Zenobi, Renato

2016-04-01

Systematic laser desorption/ionization (LDI) experiments of fullerene-C60 on a wide range of target plate materials were conducted to gain insight into the initial ion formation in matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. The positive and negative ion signal intensities of precursor, fragment, and cluster ions were monitored, varying both the laser fluence (0-3.53 Jcm-2) and the ion extraction delay time (0-950 ns). The resulting species-specific ion signal intensities are an indication for the ionization mechanisms that contribute to LDI and the time frames in which they operate, providing insight in the (MA)LDI primary ionization. An increasing electrical resistivity of the target plate material increases the fullerene-C60 precursor and fragment anion signal intensity. Inconel 625 and Ti90/Al6/V4, both highly electrically resistive, provide the highest anion signal intensities, exceeding the cation signal intensity by a factor ~1.4 for the latter. We present a mechanism based on transient electrical field strength reduction to explain this trend. Fullerene-C60 cluster anion formation is negligible, which could be due to the high extraction potential. Cluster cations, however, are readily formed, although for high laser fluences, the preferred channel is formation of precursor and fragment cations. Ion signal intensity depends greatly on the choice of substrate material, and careful substrate selection could, therefore, allow for more sensitive (MA)LDI measurements.

The fragmentation of 510 MeV/nucleon iron-56 in polyethylene. I. Fragment fluence spectra

NASA Technical Reports Server (NTRS)

Zeitlin, C.; Miller, J.; Heilbronn, L.; Frankel, K.; Gong, W.; Schimmerling, W.

1996-01-01

The fragmentation of 510 MeV/nucleon iron ions in several thicknesses of polyethylene has been measured. Non-interacting primary beam particles and fragments have been identified and their LETs calculated by measuring ionization energy loss in a stack of silicon detectors. Fluences, normalized to the incident beam intensity and corrected for detector effects, are presented for each fragment charge and target. Histograms of fluence as a function of LET are also presented. Some implications of these data for measurements of the biological effects of heavy ions are discussed.

Ion-irradiation-induced damage of steels characterized by means of nanoindentation

NASA Astrophysics Data System (ADS)

Heintze, C.; Recknagel, C.; Bergner, F.; Hernández-Mayoral, M.; Kolitsch, A.

2009-05-01

Self-ion irradiation was used to simulate the damage caused by fast neutrons in the austenitic stainless steel SS 304 SA, the ferritic/martensitic steel Eurofer'97 and a Fe-9 at.%Cr model alloy. The irradiation-induced hardness change in the damage layer was evaluated by means of nanoindentation. Three-step irradiations were performed at room temperature and 300 °C up to 1 and 10 dpa. An irradiation-induced hardness change was shown for all materials. No influence of irradiation temperature could be resolved. Irradiation-induced hardening exhibits different fluence dependencies in Eurofer'97 and Fe-9 at.%Cr. While the data indicate a saturation-like behaviour for Fe-9 at.%Cr, an increase of hardness with fluence up to 10 dpa was found for Eurofer'97.

Radiation Chemistry in Ammonia-Water Ices

NASA Technical Reports Server (NTRS)

Loeffler, M. J.; Raut, U.; Baragiola, R. A.

2010-01-01

We studied the effects of 100 keV proton irradiation on films of ammonia-water mixtures between 20 and 120 K. Irradiation destroys ammonia, leading to the formation and trapping of H2, N2 NO, and N2O, the formation of cavities containing radiolytic gases, and ejection of molecules by sputtering. Using infrared spectroscopy, we show that at all temperatures the destruction of ammonia is substantial, but at higher temperatures (120 K), it is nearly complete (approximately 97% destroyed) after a fluence of 10(exp 16) ions per square centimeter. Using mass spectroscopy and microbalance gravimetry, we measure the sputtering yield of our sample and the main components of the sputtered flux. We find that the sputtering yield depends on fluence. At low temperatures, the yield is very low initially and increases quadratically with fluence, while at 120 K the yield is constant and higher initially. The increase in the sputtering yield with fluence is explained by the formation and trapping of the ammonia decay products, N2 and H2 which are seen to be ejected from the ice at all temperatures.

Heavy ion irradiations on synthetic hollandite-type materials: Ba{sub 1.0}Cs{sub 0.3}A{sub 2.3}Ti{sub 5.7}O{sub 16} (A=Cr, Fe, Al)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Ming, E-mail: mtang@lanl.gov; Tumurugoti, Priyatham; Clark, Braeden

2016-07-15

The hollandite supergroup of minerals has received considerable attention as a nuclear waste form for immobilization of Cs. The radiation stability of synthetic hollandite-type compounds described generally as Ba{sub 1.0}Cs{sub 0.3}A{sub 2.3}Ti{sub 5.7}O{sub 16} (A=Cr, Fe, Al) were evaluated by heavy ion (Kr) irradiations on polycrystalline single phase materials and multiphase materials incorporating the hollandite phases. Ion irradiation damage effects on these samples were examined using grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Single phase compounds possess tetragonal structure with space group I4/m. GIXRD and TEM observations revealed that 600 keV Kr irradiation-induced amorphization on single phasemore » hollandites compounds occurred at a fluence between 2.5×10{sup 14} Kr/cm{sup 2} and 5×10{sup 14} Kr/cm{sup 2}. The critical amorphization fluence of single phase hollandite compounds obtained by in situ 1 MeV Kr ion irradiation was around 3.25×10{sup 14} Kr/cm{sup 2}. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system. - Graphical abstract: 600 keV Kr irradiation-induced amorphization on single phase hollandites compounds occurred at a fluence between 2.5×10{sup 14} Kr/cm{sup 2} and 5×10{sup 14} Kr/cm{sup 2}. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system. This is also the first time that the critical amorphization fluence of single phase hollandite compounds were determined at a fluence of around 3.25×10{sup 14} Kr/cm{sup 2} by in situ 1 MeV Kr ion irradiation. Display Omitted.« less

Flux threshold determination for tungsten nano-fuzz formation using an 80 eV He-ion beam

NASA Astrophysics Data System (ADS)

Meyer, Fred W.; Bannister, Mark E.; Parish, Chad M.

2017-10-01

At the ORNL Multicharged Ion Research Facility (MIRF), we have extended our investigation of flux thresholds for He-ion induced nano-fuzz formation on hot tungsten surfaces down to plasma-edge-relevant energies of 80 eV. We measured the size of the incident ion beam by accurate flux-profile measurements, and the size of the region where tungsten nano-fuzz was formed by post-exposure SEM surface analysis and real-time monitoring of the hot W surface-emissivity change throughout the beam exposure. If tungsten nano-fuzz formation had a fluence threshold, the size of the observed nano-fuzz region would be expected to increase with exposure time, eventually filling the entire ion beam spot. Instead, we found that the region of nano-fuzz formation (1) was always smaller than the beam spot itself and (2) did not increase in size with time, i.e. with accumulated He ion fluence. By comparison of the flux profile and the spatial extent of the fuzz region we determined a flux threshold of 9.5 +-3×1019/m2s at 80 eV He ion impact energy. We show that the observed flux-threshold energy dependence for nano-fuzz formation, which we have now mapped out from 80 eV to 8.5 keV, is well reproduced by the combined energy dependences of He-ion reflection, He-ion range and target-damage creation, determined using SRIM. Research sponsored by the LDRD program at ORNL, managed by UT-Battelle for the USDOE, and by the DOE OFES.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

PubMed Central

2013-01-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer. PMID:24138985

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation.

PubMed

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-18

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Is energy pooling necessary in ultraviolet matrix-assisted laser desorption/ionization?

PubMed

Lin, Hou-Yu; Song, Botao; Lu, I-Chung; Hsu, Kuo-Tung; Liao, Chih-Yu; Lee, Yin-Yu; Tseng, Chien-Ming; Lee, Yuan-Tseh; Ni, Chi-Kung

2014-01-15

Energy pooling has been suggested as the key process for generating the primary ions during ultraviolet matrix-assisted laser desorption/ionization (UV-MALDI). In previous studies, decreases in fluorescence quantum yields as laser fluence increased for 2-aminobenzoic acid, 2,5-dihydroxybenzoic acid (2,5-DHB), and 3-hydroxypicolinic acid were used as evidence of energy pooling. This work extends the research to other matrices and addresses whether energy pooling is a universal property in UV-MALDI. Energy pooling was investigated in a time-resolved fluorescence experiment by using a short laser pulse (355 nm, 20 ps pulse width) for excitation and a streak camera (1 ps time resolution) for fluorescence detection. The excited-state lifetime of 2,5-DHB decreased with increases in laser fluence. This suggests that a reaction occurs between two excited molecules, and that energy pooling may be one of the possible reactions. However, the excited-state lifetime of 2,4,6-trihydroxyacetophenone (THAP) did not change with increases in laser fluence. The upper limit of the energy pooling rate constant for THAP is estimated to be approximately 100-500 times smaller than that of 2,5-DHB. The small energy pooling rate constant for THAP indicates that the potential contribution of the energy pooling mechanism to the generation of THAP matrix primary ions should be reconsidered. Copyright © 2013 John Wiley & Sons, Ltd.

The parameter influence of ion irradiation on the distribution profile of the defect in silicon films

NASA Astrophysics Data System (ADS)

Shemukhin, A. A.; Balaskshin, Yu. V.; Evseev, A. P.; Chernysh, V. S.

2017-09-01

As silicon is an important element in semiconductor devices, the process of defect formation under ion irradiation in it is studied well enough. Modern electronic components are made on silicon lattices (films) that are 100-300 nm thick (Chernysh et al., 1980; Shemukhin et al., 2012; Ieshkin et al., 2015). However, there are still features to be observed in the process of defect formation in silicon. In our work we investigate the effect of fluence and target temperature on the defect formation in films and bulk silicon samples. To investigate defect formation in the silicon films and bulk silicon samples we present experimental data on Si+ implantation with an energy of 200 keV, fluences range from 5 * 1014 to 5 * 1015 ion/cm2 for a fixed flux 1 μA/cm2 and the substrate temperatures from 150 to 350 K The sample crystallinity was investigated by using the Rutherford backscattering technique (RBS) in channeling and random modes. It is shown that in contrast to bulk silicon for which amorphization is observed at 5 × 1016 ion/cm2, the silicon films on sapphire amorphize at lower critical fluences (1015 ion/cm2). So the amorphization critical fluences depend on the target temperature. In addition it is shown that under similar implantation parameters, the disordering of silicon films under the action of the ion beam is stronger than the bulk silicon.

Radiation damage induced in Al2O3 single crystal by 90 MeV Xe ions

NASA Astrophysics Data System (ADS)

Zirour, H.; Izerrouken, M.; Sari, A.

2015-12-01

Radiation damage induced in Al2O3 single crystal by 90 MeV Xe ions were investigated by optical absorption measurements, Raman spectroscopy and X-ray diffraction (XRD) techniques. The irradiations were performed at the GANIL accelerator in Caen, France for the fluence in the range from 1012 to 6 × 1013 cm-2 at room temperature under normal incidence. The F+ and F22+ centers kinetic as a function of fluence deduced from the optical measurements explains that the single defects (F and F+) aggregate to F center clusters (F2 , F2+, F22+) during irradiation at high fluence (>1013 cm-2). Raman and XRD analysis reveal a partial disorder of 40% of Al2O3 in the studied fluence range in accordance with Kabir et al. (2008) study. The result suggests that this is due to the stress relaxation process which occurs at high fluence (>1013 cm-2).

Helium-induced hardening effect in polycrystalline tungsten

NASA Astrophysics Data System (ADS)

Kong, Fanhang; Qu, Miao; Yan, Sha; Zhang, Ailin; Peng, Shixiang; Xue, Jianming; Wang, Yugang

2017-09-01

In this paper, helium induced hardening effect of tungsten was investigated. 50 keV He2+ ions at fluences vary from 5 × 1015 cm-2 to 5 × 1017 cm-2 were implanted into polycrystalline tungsten at RT to create helium bubble-rich layers near the surface. The microstructure and mechanical properties of the irradiated specimens were studied by TEM and nano-indentor. Helium bubble rich layers are formed in near surface region, and the layers become thicker with the rise of fluences. Helium bubbles in the area of helium concentration peak are found to grow up, while the bubble density is almost unchanged. Obvious hardening effect is induced by helium implantation in tungsten. Micro hardness increases rapidly with the fluence firstly, and more slowly when the fluence is above 5 × 1016 cm-2. The hardening effect of tungsten can be attributed to helium bubbles, which is found to be in agreement with the Bacon-Orowan stress formula. The growing diameter is the major factor rather than helium bubbles density (voids distance) in the process of helium implantation at fluences below 5 × 1017 cm-2.

Novel optical waveguides by in-depth controlled electronic damage with swift ions

NASA Astrophysics Data System (ADS)

Olivares, J.; García-Navarro, A.; Méndez, A.; Agulló-López, F.; García, G.; García-Cabañes, A.; Carrascosa, M.

2007-04-01

We review recent results on a novel method to modify crystalline dielectric materials and fabricate optical waveguides and integrated optics devices. It relies on irradiation with medium-mass high-energy ions (2-50 MeV) where the electronic stopping power is dominant over that one associated to nuclear collisions. By exploiting the processing capabilities of the method, novel optical structures can be achieved at moderate (1014 cm-2) and even low and ultralow (1012 cm-2) fluences. In particular, step-like waveguides with a high index jump Δn ∼ 0.1-0.2, guiding both ordinary and extraordinary modes, have been prepared with F and O ions (20 MeV) at moderate fluences. They present good non-linear and electrooptic perfomance and low losses. (1 dB/cm). Moreover, useful optical waveguiding has been also achieved at ultralow frequencies (isolated track regime), using Cl and Si ions (40-45 MeV). In this latter case, the individual amorphous nanotracks, whose radius increases with depth, create an effective optical medium causing optical trapping.

Estimation of Al2O3 critical temperature using a Langmuir probe in laser ablation

NASA Astrophysics Data System (ADS)

Yahiaoui, K.; Abdelli-Messaci, S.; Messaoud Aberkane, S.; Kellou, A.

2016-11-01

Pulsed laser deposition (PLD) has demonstrated its capacity in thin films growing under the moderate laser intensity. But when the laser intensity increases, the presence of droplets on the thin film limits the PLD efficiency such that the process needs an optimization study. In this way, an experimental study has been conducted in order to correlate between the appearance of those droplets and the laser fluence. The comprehension of the physical mechanism during ablation and the control of the deposition parameters allowed to get a safe process. Our experiment consists in measuring the amount of ejected matter from polycrystalline alumina target as a function of the laser fluence when irradiated by a KrF laser. According to laser fluence, several kinds of ablation regimes have been identified. Below a threshold value found as 12 J/cm2, the mechanism of ablation was assigned to normal evaporation, desorption and nonthermal processes. While above this threshold value, the mechanism of ablation was assigned to phase explosion phenomenon which is responsible of droplets formation when the surface temperature approaches the critical temperature T tc. A negative charge collector was used to collect the positive ions in the plume. Their times of flight (TOF) signal were used to estimate the appropriate T tc for alumina target. Ions yield, current as well as kinetic energy were deduced from the TOF signal. Their evolutions show the occurrence of an optical breakdown in the vapor plume which is well correlated with the onset of the phase explosion phenomenon. At 10 J/cm2, the ions velocities collected by the probe have been compared to those obtained from optical emission spectroscopy diagnostic and were discussed. To prove the occurrence of phase explosion by the appearance of droplets, several thin films were elaborated on Si (100) substrate at different laser fluence into vacuum. They have been characterized by scanning electron microscope. The results were well correlated with those obtained with mass measurements as function of laser fluence.

Mechanisms of electrical isolation in O+ -irradiated ZnO

NASA Astrophysics Data System (ADS)

Zubiaga, A.; Tuomisto, F.; Coleman, V. A.; Tan, H. H.; Jagadish, C.; Koike, K.; Sasa, S.; Inoue, M.; Yano, M.

2008-07-01

We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000cm-1 when the ion fluence is at most 1015cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.

Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion

PubMed Central

2012-01-01

Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current–voltage characteristics of ZnO-PS heterojunctions were also measured. As compared to the granular crystallites of zinc oxide layer, Al-doped zinc oxide (ZnO) layer showed a flaky structure. The PL spectrum of the pristine composite structure consists of the emission from the ZnO layer as well as the near-infrared emission from the PS substrate. Due to an increase in the number of deep-level defects, possibly oxygen vacancies after swift ion irradiation, PS-Al-doped ZnO nanocomposites formed with high-porosity PS are shown to demonstrate a broadening in the PL emission band, leading to the white light emission. The broadening effect is found to increase with an increase in the ion fluence and porosity. XRD study revealed the relative resistance of the film against the irradiation, i.e., the irradiation of the structure failed to completely amorphize the structure, suggesting its possible application in optoelectronics and sensing applications under harsh radiation conditions. PMID:22748164

Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3D NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Seidleck, Christina; Kim, Hak; Phan, Anthony; Label, Kenneth

2017-01-01

We evaluated the effects of heavy ion and proton irradiation for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-cell level (MLC) storage mode. The 3D NAND showed significantly reduced SEU susceptibility in single-level-cell (SLC) storage mode. Additionally, the 3D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the Micron 16 nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

Ion implantation disorder in strained-layer superlattices

NASA Astrophysics Data System (ADS)

Arnold, G. W.; Picraux, S. T.; Peercy, P. S.; Myers, D. R.; Biefeld, R. M.; Dawson, L. R.

Cantilever beam bending and RBS channeling measurements have been used to examine implantation induced disorder and stress buildup in InO 2GaO 8As/GaAs SLS structures. The critical fluence for saturation of compressive stress occurs prior to amorphous layer formation and is followed by stress relief. For all the ions the maximum ion induced stress scales with energy density into atomic processes and stress relief occurs above approximately 1x10 to the 20th keV/1 cubic cm. Stress relief is more pronounced for the SLSs than for bulk GaAs. Stress relief may lead to slip or other forms of inelastic material flow in SLSs, which would be undesirable for active regions in device applications. Such material flow may be avoided by limiting maximum fluences or by multiple step or simultaneous implantation and annealing for high fluences.

Tuning wettability of hydrogen titanate nanowire mesh by Na+ irradiation

NASA Astrophysics Data System (ADS)

Das, Pritam; Chatterjee, Shyamal

2018-04-01

Hydrogen titanate (HT) nanowires have been widely studied for remarkable properties and various potential applications. However, a handful studies are available related to ion beam induced structural changes and influence on wetting behavior of the HT nanowire surface. In this work, we exposed HT nanowires to 5 keV Na+ at an ion fluence of 1×1016 ions.cm-2. Scanning electron microscope shows that at this ion fluence nanowires are bent arbitrarily and they are welded to each other forming an interlinked network structure. Computer simulation shows that ion beam induces defect formation in the nanowires, which plays major role in such structural modifications. An interesting alteration of surface wetting property is observed due to ion irradiation. The hydrophilic pristine surface turns into hydrophobic after ion irradiation.

Electrical properties and dielectric spectroscopy of Ar{sup +} implanted polycarbonate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak, E-mail: mahak.chawla@gmail.com; Shekhawat, Nidhi; Aggarwal, Sanjeev

2015-05-15

The aim of the present paper is to study the effect of argon ion implantation on electrical and dielectric properties of polycarbonate. Specimens were implanted with 130 keV Ar{sup +} ions in the fluence ranging from 1×10{sup 14} to 1×10{sup 16} ions cm{sup −2}. The beam current used was ∼0.40 µA cm{sup −2}. The electrical conduction behaviour of virgin and Ar{sup +} implanted polycarbonate specimens have been studied through current-voltage (I-V characteristic) measurements. It has been observed that after implantation conductivity increases with increasing ion fluence. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz.more » Relaxation processes were studied by Cole-Cole plot of complex permittivity (real part of complex permittivity, ε′ vs. imaginary part of complex permittivity, ε″). The Cole-Cole plots have also been used to determine static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}) and molecular relaxation time (τ). The dielectric behaviour has been found to be significantly affected due to Ar{sup +} implantation. The possible correlation between this behaviour and the changes induced by the implantation has been discussed.« less

Recharging processes, radiation induced strain and changes of OH - bands under H + ion implantation in Ti doped lithium niobate

NASA Astrophysics Data System (ADS)

Kumar, P.; Moorthy Babu, S.; Bhaumik, I.; Ganesamoorthy, S.; Karnal, A. K.; Kumar, Praveen; Rodrigues, G. O.; Sulania, I.; Kanjilal, D.; Pandey, A. K.; Raman, R.

2010-01-01

A systematic analysis of variations in structural and optical characteristics of Z-cut plates of titanium doped congruent lithium niobate single crystals implanted with 120 keV proton beam at various fluences of 10 15, 10 16 and 10 17 protons/cm 2 is presented. Through, high resolution X-ray diffraction, atomic force microscopy, Fourier transform infrared and UV-visible-NIR analysis of congruent lithium niobate, the correlation of properties before and after implantation are discussed. HRXRD (0 0 6) reflection by Triple Crystal Mode shows that both tensile and compressive strain peak are produced by the high fluence implantation. A distinct tensile peak was observed from implanted region for a fluence of 10 16 protons/cm 2. AFM micrographs indicate mountain ridges, bumps and protrusions on target surface on implantation. UV-visible-NIR spectra reveal an increase in charge transfer between Ti 3+/Ti 4+ and ligand oxygen for implantation with 10 15 protons/cm 2, while spectra for higher fluence implanted samples show complex absorption band in the region from 380-1100 nm. Variations of OH - stretching vibration mode were observed for cLN Pure, cLNT2% virgin, and implanted samples with FTIR spectra. The concentration of OH - ion before and after implantation was calculated from integral absorption intensity. The effect of 120 keV proton implantation induced structural, surface and optical studies were correlated.

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

NASA Astrophysics Data System (ADS)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

Initial stages of ion beam-induced phase transformations in Gd2O3 and Lu2O3

NASA Astrophysics Data System (ADS)

Chen, Chien-Hung; Tracy, Cameron L.; Wang, Chenxu; Lang, Maik; Ewing, Rodney C.

2018-02-01

The atomic-scale evolution of lanthanide sesquioxides Gd2O3 and Lu2O3 irradiated with 1 MeV Kr ions at room temperature and 120 K, up to fluences of 1 × 1016 ions/cm2 (˜20 dpa), has been characterized by in situ transmission electron microscopy. At room temperature, both oxides exhibited high radiation tolerance. Irradiation did not cause any observable structural change in either material, likely due to the mobility of irradiation-induced point defects, causing efficient defect annihilation. For Gd2O3, having the larger cation ionic radius of the two materials, an irradiation-induced stacking fault structure appeared at low fluences in the low temperature irradiation. As compared with the cubic-to-monoclinic phase transformations known to result from higher energy (˜GeV) ion irradiation, Kr ions of lower energies (˜MeV) yield much lower rates of damage accumulation and thus less extensive structural modification. At a fluence of 2.5 × 1015 ions/cm2, only the initial stages of the cubic-to-monoclinic (C to B) phase transformation process, consisting of the formation and aggregation of defects, have been observed.

Fundamental studies of MALDI with an orthogonal TOF mass spectrometer

NASA Astrophysics Data System (ADS)

Qiao, Hui

The interaction between the matrix and analyte molecules are studied with a high resolution MALDI imaging technique in an orthogonal-injection time of flight (TOF) mass spectrometer. The analyte incorporation and distribution patterns have been clearly demonstrated. Purified protein analytes were found to be homogeneously incorporated in large single crystals of DHB and sinapinic acid matrices, with no evidence for preferred crystal faces. Segregation of some species was observed and appeared to correlate with analyte hydrophobicity, and to a lesser extent analyte mass or mobility. Similar segregation phenomena were observed with confocal laser scanning microscopy of the same analytes labeled with fluorescent dyes in 2,5-DHB single crystals. The above investigations may shed some light on optimizing sample preparation with different matrices. The influence of incident laser parameters on sensitivity in MALDI has been investigated using orthogonal-injection TOF instruments. A qualitative comparison was first made between the beam profiles obtained with a N 2 laser and a Nd:YAG laser using 2-m long optical fibers. The N 2 laser gives better sensitivity, consistent with a more uniform fluence distribution and therefore better coverage of the N2 laser profile. Most of the difference disappears when a 30-m long fiber is used or when the fibers are twisted during irradiation to smooth out the fluence distribution. In more systematic measurements, the total integrated ion yield from a single spot (a measure of sensitivity) was found to increase rapidly with fluence to a maximum, and then saturate or decrease slightly. Thus, the optimum sensitivity is achieved at high fluence. For a fluence near threshold, the integrated yield has a steep (cubic) dependence on the spot size, but the yield saturates at higher fluence for smaller spots. The area dependence is much weaker (close to linear) for fluence values above saturation, with the result that the highest integrated yields per unit area are obtained with the smallest spot sizes. The results have particular relevance for imaging MALDI, where sensitivity and spatial resolution are important figures of merit. Finally the detection properties of the MCP detector were studied with a hybrid MCP and CuBe venetian blind converter detector. The measurements show that the detection efficiency of the MCP drops with the increasing of ion mass and the decreasing of the ion energy. For transferrin (79,500 Da), the relative detection efficiency of the MCP is about 40% at 10.6 keV and it decreases to about 5% at 4.6 keV. The secondary electron emission coefficient of the MCP shows a linear dependence on mass and a power law dependence on velocity (˜3.2). No clear velocity threshold is observed for secondary electron emission.

Target Plate Material Influence on Fullerene-C60 Laser Desorption/Ionization Efficiency.

PubMed

Zeegers, Guido P; Günthardt, Barbara F; Zenobi, Renato

2016-04-01

Systematic laser desorption/ionization (LDI) experiments of fullerene-C60 on a wide range of target plate materials were conducted to gain insight into the initial ion formation in matrix-assisted laser desorption/ionization (MALDI) mass spectrometry. The positive and negative ion signal intensities of precursor, fragment, and cluster ions were monitored, varying both the laser fluence (0-3.53 Jcm(-2)) and the ion extraction delay time (0-950 ns). The resulting species-specific ion signal intensities are an indication for the ionization mechanisms that contribute to LDI and the time frames in which they operate, providing insight in the (MA)LDI primary ionization. An increasing electrical resistivity of the target plate material increases the fullerene-C60 precursor and fragment anion signal intensity. Inconel 625 and Ti90/Al6/V4, both highly electrically resistive, provide the highest anion signal intensities, exceeding the cation signal intensity by a factor ~1.4 for the latter. We present a mechanism based on transient electrical field strength reduction to explain this trend. Fullerene-C60 cluster anion formation is negligible, which could be due to the high extraction potential. Cluster cations, however, are readily formed, although for high laser fluences, the preferred channel is formation of precursor and fragment cations. Ion signal intensity depends greatly on the choice of substrate material, and careful substrate selection could, therefore, allow for more sensitive (MA)LDI measurements. Graphical Abstract ᅟ.

On-line Raman spectroscopy of calcite and malachite during irradiation with swift heavy ions

NASA Astrophysics Data System (ADS)

Dedera, Sebastian; Burchard, Michael; Glasmacher, Ulrich A.; Schöppner, Nicole; Trautmann, Christina; Severin, Daniel; Romanenko, Anton; Hubert, Christian

2015-12-01

A new on-line Raman System, which was installed at the M3-beamline at the UNILAC, GSI Helmholtzzentrum für Schwerionenforschung Darmstadt was used for first "in situ" spectroscopic measurements. Calcite and malachite samples were irradiated in steps between 1 × 109 and 1 × 1012 ions/cm2 with Au ions (calcite) and Xe ions (malachite) at an energy of 4.8 MeV/u. After irradiation, calcite revealed a new Raman band at 437 cm-1 and change of the full width at half maximum for the 1087 cm-1 Raman band. The Raman bands of malachite change significantly with increasing fluence. Up to a fluence of 7 × 1010 ions/cm2, all existing bands decrease in intensity. Between 8 × 1010 and 1 × 1011 ions/cm2 a broad Cu2O band between 110 and 220 cm-1 occurs, which superimposes the pre-existing Raman bands. Additionally, a new broad band between 1000 and 1750 cm-1 is formed, which is interpreted as a carbon coating. In contrast to the Cu2O band, the carbon band vanished when further irradiating the sample. The installations as well as first in situ measurements at room temperature are presented.

SHI induced modification in structural, optical, dielectric and thermal properties of poly ethylene oxide films

NASA Astrophysics Data System (ADS)

Patel, Gnansagar B.; Bhavsar, Shilpa; Singh, N. L.; Singh, F.; Kulriya, P. K.

2016-07-01

Poly ethylene oxide (PEO) films were synthesized by solution cast method. These self-standing films were exposed with 60 MeV C+5 ion and 100 MeV Ni+7 ion at different fluences. SHI induced effect was investigated by employing various techniques. The crystalline size decreased upon irradiation as observed from XRD analysis. FTIR analysis reveals the decrement in the peak intensity upon irradiation. Tauc's method was used to determine the optical band gap (Eg), which shows decreasing trends with increase of fluence. The dielectric properties were investigated in the frequency range 10 Hz to 10 MHz for unirradiated and irradiated films. The dielectric constant remains same for the broad-spectrum of frequency and increases at lower frequency. The dielectric loss also moderately influence as a function of frequency due to irradiation. DSC analysis validated the results of XRD. Scanning electron microscopy (SEM) reveals that there is significant change in the surface morphology due to irradiation.

A spectroscopic ellispometric study of the tunability of the optical constants and thickness of GeO{sub x} films with swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayarangamuthu, K.; Singh, Chaman; Rath, Shyama

2011-09-15

Sub-stoichiometric GeO{sub x} films were fabricated by electron-beam evaporation method. The films were irradiated with 100 MeV Ag{sup 7+} ions at fluences between 1 x 10{sup 12} and 1 x 10{sup 14} ions-cm{sup -2}. Spectroscopic ellipsometric measurements were performed in air at room temperature. The values of the layer thickness and refractive index were extracted from ellipsometry using a multilayer analysis and the Tauc Lorentz model. The refractive index (at 633 nm) of the as-deposited GeO{sub x} film was estimated to be 1.860 and decreased to 1.823 for films irradiated at an ion fluence of 1 x 10{sup 14} ions-cm{supmore » -2}. The thickness of the films also decreased after irradiation and is due to a sputtering induced by the ion beam. The change in the refractive index with ion fluence is attributed to a stoichiometric change and structural transformation represented by GeO{sub x}{yields} Ge + GeO{sub y} (y > x) occurring due to a thermal spike induced by ion irradiation. Swift heavy ions thus provide a scope for modulating the refractive index of GeO{sub x} films. The thickness and stoichiometric changes are supported by Rutherford backscattering measurements.« less

Kinetic and Potential Sputtering Enhancements of Lunar Regolith Erosion: The Contribution of the Heavy Multicharged (Minority) Solar Wind Constituents

NASA Technical Reports Server (NTRS)

Meyer, F. W.; Barghouty, A. F.

2012-01-01

We report preliminary results for H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A lunar regolith simulant at solar wind velocities, obtain ed at the ORNL Multicharged Ion Research Facility using quadrupole ma ss spectrometry. The multi-charged Ar ions were used as proxies for i ntermediate mass solar wind multicharged ions. Prior to the Ar beam e xposures, the sample was exposed to high fluence H+ irradiation to si mulate H-loading due to the dominant solar wind constituent. A x80 en hancement of oxygen sputtering by Ar+ over same velocity H+ was measu red and an additional x2 increase for Ar+9 over same velocity Ar+ was demonstrated, giving clear evidence of the importance of potential s puttering by multicharged ions. This enhancement was observed to pers ist to the maximum fluences investigated (approx 10(exp 16)/sq cm). As discussed in a companion abstract by N. Barghouty, such persistent s puttering enhancement has significant implications on weathering and aging of lunar regolith. In addition, XPS measurements showed strong evidence of Fe reduction for those target areas that had been exposed to high fluence Ar+ and Ar+8 beams. Preferential oxidation of the Fe -reduced beam-exposed regions during transfer to the XPS system led t o enhanced O concentrations in those regions as well. On the basis of these very promising preliminary results, a NASA-LASER project on mo re extensive measurements was recently selected for funding. The prop osal expands the collaboration with NASA-MSFC for the simulation effort, and adds a new collaboration with NASA-GSFC for lunar mission-rele vant measurements.

Solar particle induced upsets in the TDRS-1 attitude control system RAM during the October 1989 solar particle events

NASA Astrophysics Data System (ADS)

Croley, D. R.; Garrett, H. B.; Murphy, G. B.; Garrard, T. L.

1995-10-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAR I unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEUs calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEUs by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEUs.

Investigations on the in vitro bioactivity of swift heavy oxygen ion irradiated hydroxyapatite.

PubMed

Suganthi, R V; Prakash Parthiban, S; Elayaraja, K; Girija, E K; Kulariya, P; Katharria, Y S; Singh, F; Asokan, K; Kanjilal, D; Narayana Kalkura, S

2009-12-01

The effect of swift heavy oxygen ion irradiation of hydroxyapatite on its in vitro bioactivity was studied. The irradiation experiment was performed using oxygen ions at energy of 100 MeV with 1 x 10(12) and 1 x 10(13) ions/cm2 fluence range. The irradiated samples were characterized by glancing angle X-ray diffraction (GXRD), photoluminescence spectroscopy (PL) and scanning electron microscopy (SEM). GXRD showed that irradiated samples exhibited better crystallinity. The irradiated samples revealed an increase in PL intensity. In addition, the irradiated hydroxyapatite was found to have enhanced bioactivity.

Role of defects in BiFeO₃ multiferroic films and their local electronic structure by x-ray absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravalia, Ashish; Vagadia, Megha; Solanki, P. S.

2014-10-21

Present study reports the role of defects in the electrical transport in BiFeO₃ (BFO) multiferroic films and its local electronic structure investigated by near-edge X-ray absorption fine structure. Defects created by high energy 200 MeV Ag⁺¹⁵ ion irradiation with a fluence of ∼5 × 10¹¹ ions/cm² results in the increase in structural strain and reduction in the mobility of charge carriers and enhancement in resistive (I-V) and polarization (P-E) switching behaviour. At higher fluence of ∼5 × 10¹² ions/cm², there is a release in the structural strain due to local annealing effect, resulting in an increase in the mobility of charge carriers, which are releasedmore » from oxygen vacancies and hence suppression in resistive and polarization switching. Near-edge X-ray absorption fine structure studies at Fe L₃,₂- and O K-edges show a significant change in the spectral features suggesting the modifications in the local electronic structure responsible for changes in the intrinsic magnetic moment and electrical transport properties of BFO.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panitz, J.K.G.

A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form strongly depend on: (1) argon energy (from 250 to 1500 eV), (2) fluence (10{sup 19} to 10{sup 20} ions/cm{sup 2}), and (3) flux (0.1 to 1 mA/cm{sup 2}). The texture morphology depends less strongly on the background ambient (Mo vs graphite), earlier alloy heat treatments and the temperature during bombardment (100{degree}C and 450{degree}C). As the texture matures with increasing fluence, the number of large features increases at the expensemore » of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical sidewall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including: (1) pulsed power Li+ beam anodes, (2) cold cathode field emission devices, (3) optical absorbers and (4) catalysis supports. 18 refs., 5 figs.« less

CO adsorption on ion bombarded Ni(111): characterization by photoemission from adsorbed xenon

NASA Astrophysics Data System (ADS)

Fu, Sabrina S.; Malafsky, Geoffrey P.; Hsu, David S. Y.

1993-11-01

The adsorption of CO on Ni(111), ion bombarded with various fluences of 1.0 keV Ar + ions, has been investigated using photoemission from adsorbed xenon (PAX). After ion bombardment of the Ni(111) surface, various amounts of CO were adsorbed, followed by adsorption of xenon at 85 K. Two pressures of xenon were used in examining the 3d {5}/{2} peak of xenon: 5 × 10 -6 and 7 × 10 -10 Torr. PAX data taken at both pressures show that CO selectively adsorbs onto the defect (step) sites created by ion bombardment. In addition, it was found that the amount of CO which could occupy a defect site previously occupied by one Xe atom varied from 10 to 2.5, depending on the ion fluence.

Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants

DOE PAGES

Jurewicz, Amy J. G.; Burnett, Don S.; Rieck, Karen D.; ...

2017-07-05

An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp 3–sp 2 bonds (>50%). For 27 months of exposure to space at the first We passively irradiated lagrange point, the collectors, with SW (H fluence ~2 × 10 16 ions cm -2; He fluence ~8 × 10 14 ions cm -2). The radiation damage caused by the implanted H ionsmore » peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg ( 25Mg and 26Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 10 14 ions cm -2. Furthermore, the shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.« less

Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jurewicz, Amy J. G.; Burnett, Don S.; Rieck, Karen D.

An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp 3–sp 2 bonds (>50%). For 27 months of exposure to space at the first We passively irradiated lagrange point, the collectors, with SW (H fluence ~2 × 10 16 ions cm -2; He fluence ~8 × 10 14 ions cm -2). The radiation damage caused by the implanted H ionsmore » peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg ( 25Mg and 26Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 10 14 ions cm -2. Furthermore, the shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.« less

Ferromagnetic order in diamond-like carbon films by Co implantation

NASA Astrophysics Data System (ADS)

Gupta, Prasanth; Williams, Grant; Markwitz, Andreas

2016-02-01

We report the observation of ferromagnetic order in diamond-like carbon (DLC) films made by mass selective ion beam deposition and after low energy implantation with Co ions. Different Co fluences were studied with a peak concentration of up to 25% at an average Co implantation depth of 30 nm. The saturation moment per Co atom (0.2-0.3 μ B) was found to be strongly dependent on temperature and it was significantly lower than that reported in bulk cobalt or cobalt nanoparticles (1.67 μ B per Co atom). The observed magnetic moment cannot be attributed to ferromagnetic nanoparticles as no evidence for superparamagnetism was detected. The magnetic order observed may be due to Co bonding in DLC possibly leading to dilute ferromagnetic semiconductor behaviour with an inhomogeneous distribution of cobalt atoms. Raman spectroscopy measurements showed that Co implantation resulted in an increase in the sp2 clustering with increasing Co fluence. Thus, our results show that Co implantation into DLC films increases the graphitic properties of the film and leads to magnetic order at room temperature.

Stoichiometric titanium dioxide ion implantation in AISI 304 stainless steel for corrosion protection

NASA Astrophysics Data System (ADS)

Hartwig, A.; Decker, M.; Klein, O.; Karl, H.

2015-12-01

The aim of this study is to evaluate the applicability of highly chemically inert titanium dioxide synthesized by ion beam implantation for corrosion protection of AISI 304 stainless steel in sodium chloride solution. More specifically, the prevention of galvanic corrosion between carbon-fiber reinforced plastic (CFRP) and AISI 304 was investigated. Corrosion performance of TiO2 implanted AISI 304 - examined for different implantation and annealing parameters - is strongly influenced by implantation fluence. Experimental results show that a fluence of 5 × 1016 cm-2 (Ti+) and 1 × 1017 cm-2 (O+) is sufficient to prevent pitting corrosion significantly, while galvanic corrosion with CFRP can already be noticeably reduced by an implantation fluence of 5 × 1015 cm-2 (Ti+) and 1 × 1016 cm-2 (O+). Surface roughness, implantation energy and annealing at 200 °C and 400 °C show only little influence on the corrosion behavior. TEM analysis indicates the existence of stoichiometric TiO2 inside the steel matrix for medium fluences and the formation of a separated metal oxide layer for high fluences.

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

NASA Astrophysics Data System (ADS)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Solar Particle Induced Upsets in the TDRS-1 Attitude Control System RAM During the October 1989 Solar Particle Events

NASA Technical Reports Server (NTRS)

Croley, D. R.; Garrett, H. B.; Murphy, G. B.; Garrard,T. L.

1995-01-01

The three large solar particle events, beginning on October 19, 1989 and lasting approximately six days, were characterized by high fluences of solar protons and heavy ions at 1 AU. During these events, an abnormally large number of upsets (243) were observed in the random access memory of the attitude control system (ACS) control processing electronics (CPE) on-board the geosynchronous TDRS-1 (Telemetry and Data Relay Satellite). The RAM unit affected was composed of eight Fairchild 93L422 memory chips. The Galileo spacecraft, launched on October 18, 1989 (one day prior to the solar particle events) observed the fluxes of heavy ions experienced by TDRS-1. Two solid-state detector telescopes on-board Galileo, designed to measure heavy ion species and energy, were turned on during time periods within each of the three separate events. The heavy ion data have been modeled and the time history of the events reconstructed to estimate heavy ion fluences. These fluences were converted to effective LET spectra after transport through the estimated shielding distribution around the TDRS-1 ACS system. The number of single event upsets (SEU) expected was calculated by integrating the measured cross section for the Fairchild 93L422 memory chip with average effective LET spectrum. The expected number of heavy ion induced SEU's calculated was 176. GOES-7 proton data, observed during the solar particle events, were used to estimate the number of proton-induced SEU's by integrating the proton fluence spectrum incident on the memory chips, with the two-parameter Bendel cross section for proton SEU'S. The proton fluence spectrum at the device level was gotten by transporting the protons through the estimated shielding distribution. The number of calculated proton-induced SEU's was 72, yielding a total of 248 predicted SEU'S, very dose to the 243 observed SEU'S. These calculations uniquely demonstrate the roles that solar heavy ions and protons played in the production of SEU's during the October 1989 solar particle events.

Thermal annealing and SHI irradiation induced modifications in sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.

2017-09-01

In the present work, we study the annealing and swift heavy ion (SHI) beam induced modifications in the optical and structural properties of sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite (NCs) thin films. The NCs thin films were synthesized by electron-beam evaporation technique at room temperature with ∼30 nm thickness for both carbon layer and ∼6 nm for gold layer. Gold-carbon NCs thin films were annealed in the presence of argon at a temperature of 500 °C, 600 °C and 750 °C. The NCs thin films were also irradiated with 90 MeV Ni ions beam with different ion fluences in the range from 3 × 1012, 6 × 1012 and 1 × 1013 ions/cm2. Surface plasmon resonance (SPR) of Au nanoparticles are not observed in the pristine film but, after annealing at temperature of 600 °C and 750 °C, it was clearly seen at ∼534 nm as confirmed by UV-visible absorption spectroscopy. 90 MeV Ni irradiated thin film at the fluence of 1 × 1013 ions/cm2 also show strong absorption band at ∼534 nm. The growth and size of Au nanoparticle for pristine and 90 MeV Ni ion irradiated thin film with fluence of 1 × 1013 ions/cm2, were estimated by Transmission electron microscopy (TEM) images with the bi-model distribution. The size of the gold nanoparticle (NPs) was found to be ∼4.5 nm for the pristine film and ∼5.4 nm for the irradiated film at a fluence of 1 × 1013 ions/cm2. The thickness and metal atomic fraction in carbon matrix were estimated by Rutherford backscattering spectroscopy (RBS). The effect of annealing as well as heavy ion irradiation on D and G band of carbon matrix were studied by Raman spectroscopy.

Characterization of PEEK, PET and PI implanted with Mn ions and sub-sequently annealed

NASA Astrophysics Data System (ADS)

Mackova, A.; Malinsky, P.; Miksova, R.; Pupikova, H.; Khaibullin, R. I.; Slepicka, P.; Gombitová, A.; Kovacik, L.; Svorcik, V.; Matousek, J.

2014-04-01

Polyimide (PI), polyetheretherketone (PEEK) and polyethylene terephthalate (PET) foils were implanted with 80 keV Mn+ ions at room temperature at fluencies of 1.0 × 1015-1.0 × 1016 cm-2. Mn depth profiles determined by RBS were compared to SRIM 2012 and TRIDYN simulations. The processes taking place in implanted polymers under the annealing procedure were followed. The measured projected ranges RP differ slightly from the SRIM and TRIDYN simulation and the depth profiles are significantly broader (up to 2.4 times) than those simulated by SRIM, while TRIDYN simulations were in a reasonable agreement up to the fluence 0.5 × 1016 in PEEK. Oxygen and hydrogen escape from the implanted layer was examined using RBS and ERDA techniques. PET, PEEK and PI polymers exhibit oxygen depletion up to about 40% of its content in virgin polymers. The compositional changes induced by implantation to particular ion fluence are similar for all polymers examined. After annealing no significant changes of Mn depth distribution was observed even the further oxygen and hydrogen desorption from modified layers appeared. The surface morphology of implanted polymers was characterized using AFM. The most significant change in the surface roughness was observed on PEEK. Implanted Mn atoms tend to dissipate in the polymer matrix, but the Mn nanoparticles are too small to be observed on TEM micrographs. The electrical, optical and structural properties of the implanted and sub-sequently annealed polymers were investigated by sheet resistance measurement and UV-Vis spectroscopy. With increasing ion fluence, the sheet resistance decreases and UV-Vis absorbance increases simultaneously with the decline of optical band gap Eg. The most pronounced change in the resistance was found on PEEK. XPS spectroscopy shows that Mn appears as a mixture of Mn oxides. Mn metal component is not present. All results were discussed in comparison with implantation experiment using the various ion species (Ni, Co) and energies used in our former experiments. Interesting differences were found in Mn concentration distribution, Mn nano-particle creation and structural changes comparing to Ni, Co ions implantation into the same polymers.

Reflectivity modification of polymethylmethacrylate by silicon ion implantation

NASA Astrophysics Data System (ADS)

Hadjichristov, Georgi B.; Ivanov, Victor; Faulques, Eric

2008-05-01

The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si + beam at fluences in the range from 10 13 to 10 17 cm -2 was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si +-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated.

Electrical conduction in 100 keV Kr+ ion implanted poly (ethylene terephthalate)

NASA Astrophysics Data System (ADS)

Goyal, P. K.; Kumar, V.; Gupta, Renu; Mahendia, S.; Anita, Kumar, S.

2012-06-01

Polyethylene terephthalate (PET) samples have been implanted to 100 keV Kr+ ions at the fluences 1×1015-- 1×1016 cm-2. From I-V characteristics, the conduction mechanism was found to be shifted from ohmic to space charge limited conduction (SCLC) after implantation. The surface conductivity of these implanted samples was found to increase with increasing implantation dose. The structural alterations in the Raman spectra of implanted PET samples indicate that such an increase in the conductivity may be attributed to the formation of conjugated double bonded carbonaceous structure in the implanted layer of PET.

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

NASA Astrophysics Data System (ADS)

Chandramohan, S.; Kanjilal, A.; Sarangi, S. N.; Majumder, S.; Sathyamoorthy, R.; Som, T.

2010-06-01

We report on effects of Fe implantation doping-induced changes in structural, optical, morphological, and vibrational properties of cadmium sulfide thin films. Films were implanted with 90 keV Fe+ ions at room temperature for a wide range of fluences from 0.1×1016 to 3.6×1016 ions cm-2 (corresponding to 0.38-12.03 at.% of Fe). Glancing angle X-ray diffraction analysis revealed that the implanted Fe atoms tend to supersaturate by occupying the substitutional cationic sites rather than forming metallic clusters or secondary phase precipitates. In addition, Fe doping does not lead to any structural phase transformation although it induces structural disorder and lattice contraction. Optical absorption studies show a reduction in the optical band gap from 2.39 to 2.17 eV with increasing Fe concentration. This is attributed to disorder-induced band tailing in semiconductors and ion-beam-induced grain growth. The strain associated with a lattice contraction is deduced from micro-Raman scattering measurements and is found that size and shape fluctuations of grains, at higher fluences, give rise to inhomogeneity in strain.

Hardness depth profile of lattice strained cemented carbide modified by high-energy boron ion implantation

NASA Astrophysics Data System (ADS)

Yoshida, Y.; Matsumura, A.; Higeta, K.; Inoue, T.; Shimizu, S.; Motonami, Y.; Sato, M.; Sadahiro, T.; Fujii, K.

1991-07-01

The hardness depth profiles of cemented carbides which were implanted with high-energy B + ions have been estimated using a dynamic microhardness tester. The B + implantations into (16% Co)-cemented WC alloys were carried out under conditions where the implantation energies were 1-3 MeV and the fluences 1 × 10 17-1 × 10 18ions/cm 2. The profiles show that the implanted layer becomes harder as fluences are chosen at higher values and there is a peak at a certain depth which depends on the implantation energy. In X-ray diffraction (XRD) studies of the implanted surface the broadened refraction peaks of only WC and Co are detected and the increments of lattice strain and of residual stress in the near-surface region are observed. It is supposed that the hardening effect should be induced by an increase in residual stress produced by lattice strain. The hardness depth profile in successive implantation of ions with different energies agrees with the compounded profile of each one of the implantations. It is concluded that the hardness depth profile can be controlled under adequate conditions of implantation.

Concurrent segregation and erosion effects in medium-energy iron beam patterning of silicon surfaces

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Lorenz, K.; Palomares, F. J.; Muñoz, A.; Castro, M.; Muñoz-García, J.; Cuerno, R.; Vázquez, L.

2018-07-01

We have bombarded crystalline silicon targets with a 40 keV Fe+ ion beam at different incidence angles. The resulting surfaces have been characterized by atomic force, current-sensing and magnetic force microscopies, scanning electron microscopy, and x-ray photoelectron spectroscopy. We have found that there is a threshold angle smaller than 40° for the formation of ripple patterns, which is definitely lower than those frequently reported for noble gas ion beams. We compare our observations with estimates of the value of the critical angle and of additional basic properties of the patterning process, which are based on a continuum model whose parameters are obtained from binary collision simulations. We have further studied experimentally the ripple structures and measured how the surface slopes change with the ion incidence angle. We explore in particular detail the fluence dependence of the pattern for an incidence angle value (40°) close to the threshold. Initially, rimmed holes appear randomly scattered on the surface, which evolve into large, bug-like structures. Further increasing the ion fluence induces a smooth, rippled background morphology. By means of microscopy techniques, a correlation between the morphology of these structures and their metal content can be unambiguously established.

Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

NASA Astrophysics Data System (ADS)

Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

2018-04-01

Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Kun; Bannister, Mark E.; Meyer, Fred W.

Here, in a magnetic fusion energy (MFE) device, the plasma-facing materials (PFMs) will be subjected to tremendous fluxes of ions, heat, and neutrons. The response of PFMs to the fusion environment is still not well defined. Tungsten metal is the present candidate of choice for PFM applications such as the divertor in ITER. However, tungsten's microstructure will evolve in service, possibly to include recrystallization. How tungsten's response to plasma exposure evolves with changes in microstructure is presently unknown. In this work, we have exposed hot-worked and recrystallized tungsten to an 80 eV helium ion beam at a temperature of 900more » °C to fluences of 2 × 10 23 or 20 × 10 23 He/m 2. This resulted in a faceted surface structure at the lower fluence or short but well-developed nanofuzz structure at the higher fluence. There was little difference in the hot-rolled or recrystallized material's near-surface (≤50 nm) bubbles at either fluence. At higher fluence and deeper depth, the bubble populations of the hot-rolled and recrystallized were different, the recrystallized being larger and deeper. This may explain previous high-fluence results showing pronounced differences in recrystallized material. The deeper penetration in recrystallized material also implies that grain boundaries are traps, rather than high-diffusivity paths.« less

Ion beam enhanced etching of LiNbO 3

NASA Astrophysics Data System (ADS)

Schrempel, F.; Gischkat, Th.; Hartung, H.; Kley, E.-B.; Wesch, W.

2006-09-01

Single crystals of z- and x-cut LiNbO 3 were irradiated at room temperature and 15 K using He +- and Ar +-ions with energies of 40 and 350 keV and ion fluences between 5 × 10 12 and 5 × 10 16 cm -2. The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He +-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO 3 in the case of Ar +-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He +- and Ar +-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min -1. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO 3 are discussed.

Hydrogen ion-driven permeation in carbonaceous films

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Holland, D. F.; Longhurst, G. R.

1989-04-01

This paper presents the results of investigations into the permeation properties of amorphous carbonaceous, a-C: H, films produced by plasmachemical deposition techniques. Carbonaceous films on iron substrates with thickness ranging from 60 nm to 110 nm were subjected to high fluence implantations with mass analyzed D +3 ions with energies ranging from 600 eV to 3000 eV and fluxes ranging from 5 × 10 14D/ cm2 s to 5 × 10 15D/ cm2 s, respectively. Deuterium re-emission upstream, deuterium permeation downstream and secondary ions sputtered from the implantation surface were measured as a function of implantation fluence for specimens at 420 K. The present studies indicate that the a-C : H film permeability is directly related to the time, hence the fluence, required to achieve isotopic replacement and saturation of the deuterium ion beam atoms stopped in the implant region. Once the deuterium saturation level is achieved in the layer, a significant fraction of the implanting ions can result in permeation. For the present experiment, this permeation factor was much higher than that for uncoated iron specimens subjected to similar beam conditions. Carbon sputter yields of 0.008-0.01 C/D were determined in this work for 1000-eV to 400-eV deuterium ions incident on a-C : H films.

95 MeV oxygen ion irradiation effects on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ke, S. C.; Siddappa, K.

2003-09-01

The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions, in the fluence range of 5 x 10(10) to 5 x 10(13) ions/cm(2). The influence of ion irradiation on threshold voltage (V-TH), linear drain current (I-DLin), leakage current (I-L), drain conductance (g(D)), transconductance (g(m)), mobility (mu) and drain saturation current (I-DSat) of MOSFETs was studied systematically for various fluence. The V-TH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (N-it) and oxide trapped charge (N-ot) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (DeltaN(it)) charge in irradiated MOSFETs were found to he higher than those of the interface trapped charge (DeltaN(ot)). The I-DLin and I-Dsat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on g(m), g(D) and mu show a degradation varying front 70 to 75% after irradiation. The mobility degradation coefficients for N-it(alpha(it)) and N-ot(alpha(it)) were estimated. The results of these studies are presented and discussed.

Effect of helium ion beam treatment on wet etching of silicon dioxide

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Grigoryev, E. A.; Sharov, T. V.; Baraban, A. P.

2018-03-01

We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 1014 cm-2 to 1017 cm-2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

Conversion coefficients from fluence to effective dose for heavy ions with energies up to 3 GeV/A.

PubMed

Sato, T; Tsuda, S; Sakamoto, Y; Yamaguchi, Y; Niita, K

2003-01-01

Radiological protection against high-energy heavy ions has been an essential issue in the planning of long-term space missions. The fluence to effective dose conversion coefficients have been calculated for heavy ions using the particle and heavy ion transport code system PHITS coupled with an anthropomorphic phantom of the MIRD5 type. The calculations were performed for incidences of protons and typical space heavy ions--deuterons, tritons, 3He, alpha particles, 12C, 20Ne, 40Ar, 40Ca and 56Fe--with energies up to 3 GeV/A in the isotropic and anterior-posterior irradiation geometries. A simple fitting formula that can predict the effective dose from almost all kinds of space heavy ions below 3 GeV/A within an accuracy of 30% is deduced from the results.

Effect of swift heavy O7+ ion radiations on conductivity of lithium based polymer blend electrolyte

NASA Astrophysics Data System (ADS)

Joge, Prajakta; Kanchan, D. K.; Sharma, Poonam; Jayswal, Manish; Avasthi, D. K.

2014-07-01

In the present work, effect of swift heavy O7+ ion of 80 MeV of different fluences, on conductivity of [PVA(47.5)-PEO(47.5)-LiCF3SO3(5)]-EC(8) polymeric films has been investigated using ac impedance spectroscopy. The power law exponent n, hopping frequency ωh and activation energies for conduction Eac and relaxation Ear, have been investigated for different fluences. The DSC measurements are carried out in order to investigate the variations in the degree of crystallinity and thermal parameters (Tm) of the blend specimen prior and after irradiation. The Fourier Transform Infrared (FT-IR) measurements are carried out in order to investigate the changes in the vibrational modes of molecules upon irradiation. The FT-IR measurements corroborate the formation of amorphous phase in the blend matrix after irradiation. The conductivity is found to be optimum at the fluence of 1×1012 ions/cm2. The enhancement and the improvement in the electrolytic properties of PVA-PEO blend upon O7+ ion irradiation have been observed.

Structural and optical properties improvements of PVP/gelatin blends induced by neutron irradiation

NASA Astrophysics Data System (ADS)

Basha, Mohammad Ahmad-Fouad; Hassan, Mohamed Ahmed

2018-05-01

Blends of polyvinylpyrrolidone and gelatin were prepared in three different concentrations to study the modifications in their structural and optical properties induced by neutron irradiations with different neutron fluence values from 108 up to 1011 neutron/cm2. X-ray spectroscopy revealed that the irradiation has induced a recrystallization phenomenon in the studied blends and the crystallinity index increased by increasing the neutron fluence due to the breaking of the crystallites. Fourier-transform infrared spectroscopy came to confirm the existence of interactions between interchain groups and a higher compatibility for the irradiated blends. The irradiation induced defects inside the material were responsible for the change in their optical and structural properties. The creation of free radicals or ions inside the conduction bands has led to the increase in the number of carriers on localized states; this has caused the increase in optical conductivity of the irradiated blends as a result of decreasing the energy gaps by increasing the neutron fluence. Results may widen the applications of the gelatin based blends to include optoelectronic devices, organic light emitting devices, solar selective and anti-reflectance bio-coatings, optical organic glass and lenses.

Teflon impregnated anatase TiO2 nanoparticles irradiated by 80 keV Xe+ ions

NASA Astrophysics Data System (ADS)

Khanam, Rizwin; Paul, Nibedita; Kumar, P.; Kanjilal, D.; Ahmed, Gazi A.; Mohanta, Dambarudhar

2014-10-01

We report the effect of 80 keV Xe+ ion irradiation on the morphological and optical responses of TiO2 nanoparticles spread over commercially available polytetrafluoroethylene (PTFE, Teflon). These nanoparticles were synthesized via a convenient, sol-gel approach with titanium isopropoxide as the main precursor. From X-ray diffraction (XRD) studies we found that, the nanoparticles crystallize in anatase phase and with a preferential orientation of crystallites along (1 0 1) plane. Upon irradiation at a fluence of 1.25 × 1017 ions/cm2, the nanoparticle dimension was found to increase from a value of ∼9 nm to ∼20-30 nm. Essentially, particle growth is predicted as a consequence of swelling behavior accompanied by the formation of Xe van der Waal crystals in isolated regions of nano-titania. Evidence of nanoripples was also witnessed on the surface of the irradiated nano-titania. The morphological evolution was assessed both by atomic force and transmission electron microscopies (AFM and TEM) independently. From the UV-Vis optical absorption studies, the estimated optical band gap was found to drop with increasing fluence, while refractive index exhibited a remarkable improvement. Photoluminescence (PL) studies have revealed that, the band edge emission and those due to the self trapped excitons (STE) and other oxygen vacancy related ones were manifested considerably as a result of Xe ion irradiation.

Synthesis Of Noble Metal Nanoparticle Composite Glasses Using Low Energy Ion Beam Mixing

NASA Astrophysics Data System (ADS)

Varma, Ranjana S.; Kothari, D. C.; Mahadkar, A. G.; Kulkarni, N. A.; Kanjilal, D.; Kumar, P.

2010-12-01

Carbon coated thin films of Cu or Au on fused silica glasses have been irradiated using 100 keV Ar+ ions at different fluences ranging from 1×1013 to 1×1016 ion/cm2. In this article, we explore a route to form noble metal nanoparticles in amorphous glass matrices without post irradiation annealing using low energy ion beam mixing where nuclear energy loss process is dominant. Optical and structural properties were studied using UV-Vis-NIR absorbance spectroscopy and Glancing angle X-ray Diffraction (GXRD). Results showed that Cu and Au nanoparticles are formed at higher fluence of 1×1016 ion/cm2 used in this work without annealing. The diameters of metal nanoparticles obtained from UV-Vis NIR and GXRD are in agreement.

Full characterization of dislocations in ion-irradiated polycrystalline UO2

NASA Astrophysics Data System (ADS)

Onofri, C.; Legros, M.; Léchelle, J.; Palancher, H.; Baumier, C.; Bachelet, C.; Sabathier, C.

2017-10-01

In order to fully characterize the dislocation loops and lines features (Burgers vectors, habit/slip planes, interstitial or vacancy type) induced by irradiation in UO2, polycrystalline thin foils were irradiated with 4 MeV Au or 390 keV Xe ions at different temperatures (25, 600 and 800 °C) and fluences (0.5 and 1 × 1015 ions/cm2), and further analyzed using TEM. In all the cases, this study, performed on a large number of dislocation loops (diameter ranging from 10 to 80 nm) and for the first time on several dislocation lines, reveals unfaulted prismatic dislocation loops with an interstitial nature and Burgers vectors only along the <110>-type directions. Almost 60% of the studied loops are purely prismatic type and lie on {110} habit planes perpendicular to the Burgers vector directions. The others lie on the {110} or {111} planes, which are neither perpendicular to the Burgers vectors, nor contain them. About 87% of the dislocation lines, formed by loop overlapping as fluence increases, are edge or mixed type in the <100>{100} slip systems, as those induced under mechanical load.

Effect of crystallographic orientation on structural and mechanical behaviors of Ni-Ti thin films irradiated by Ag7+ ions

NASA Astrophysics Data System (ADS)

Kumar, Veeresh; Singhal, Rahul

2018-04-01

In the present study, thin films of Ni-Ti shape memory alloy have been grown on Si substrate by dc magnetron co-sputtering technique using separate sputter targets Ni and Ti. The prepared thin films have been irradiated by 100 MeV Ag7+ ions at three different fluences, which are 1 × 1012, 5 × 1012, and 1 × 1013 ions/cm2. The elemental composition and depth profile of pristine film have been investigated by Rutherford backscattering spectrometry. The changes in crystal orientation, surface morphology, and mechanical properties of Ni-Ti thin films before and after irradiation have been studied by X-ray diffraction, atomic force microscopy, field-emission scanning electron microscopy, and nanoindentation techniques, respectively. X-ray diffraction measurement has revealed the existence of both austenite and martensite phases in pristine film and the formation of precipitate on the surface of the film after irradiation at an optimized fluence of 1 × 1013 ions/cm2. Nanoindentation measurement has revealed improvement in mechanical properties of Ni-Ti thin films after ion irradiation via increasing hardness and Young modulus due to the formation of precipitate and ductile phase. The improvement in mechanical behavior could be explained in terms of precipitation hardening and structural change of Ni-Ti thin film after irradiation by Swift heavy ion irradiation.

Langmuir probe measurements and mass spectrometry of plasma plumes generated by laser ablation of La0.4Ca0.6MnO3

NASA Astrophysics Data System (ADS)

Chen, Jikun; Lunney, James G.; Lippert, Thomas; Ojeda-G-P, Alejandro; Stender, Dieter; Schneider, Christof W.; Wokaun, Alexander

2014-08-01

The plasma formed in vacuum by UV nanosecond laser ablation of La0.4Ca0.6MnO3 in the fluence range of 0.8 to 1.9 J cm-2 using both Langmuir probe analysis and energy-resolved mass spectrometry has been studied. Mass spectrometry shows that the main positive ion species are Ca+, Mn+, La+, and LaO+. The Ca+ and Mn+ energy distributions are quite broad and lie in the 0-100 eV region, with the average energies increasing with laser fluence. In contrast, the La+ and LaO+ distributions are strongly peaked around 10 eV. The net time-of-arrival signal derived from the measured positive ion energy distributions is broadly consistent with the positive ion signal measured by the Langmuir probe. We also detected a significant number of O- ions with energies in the range of 0 to 10 eV. The Langmuir probe was also used to measure the temporal variation of the electron density and temperature at 6 cm from the ablation target. In the period when O- ions are found at this position, the plasma conditions are consistent with those required for significant negative oxygen ion formation, as revealed by studies on radio frequency excited oxygen plasma.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y2SiO5 crystal

NASA Astrophysics Data System (ADS)

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; Qiao, Mei; Wang, Tie-Jun; Zhang, Jing; Liu, Yong; Liu, Peng; Zhu, Zi-Hua; Wang, Xue-Lin

2017-09-01

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this paper, we used 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated Y2SiO5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prism coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.

Irradiation effect on deuterium behaviour in low-dose HFIR neutron-irradiated tungsten

DOE PAGES

Shimada, Masashi; Cao, G.; Otsuka, T.; ...

2014-12-01

Tungsten samples were irradiated by neutrons in the High Flux Isotope Reactor, Oak Ridge National Laboratory at reactor coolant temperatures of 50-70°C to low displacement damage of 0.025 and 0.3 dpa under the framework of the US-Japan TITAN program (2007-2013). After cooling down, the HFIR neutron-irradiated tungsten samples were exposed to deuterium plasmas in the Tritium Plasma Experiment, Idaho National Laboratory at 100, 200 and 500 °C twice at the ion fluence of 5×10²⁵ m⁻² to reach a total ion fluence of 1×10²⁶ m⁻² in order to investigate the near surface deuterium retention and saturation via nuclear reaction analysis. Finalmore » thermal desorption spectroscopy was performed to elucidate irradiation effect on total deuterium retention. Nuclear reaction analysis results showed that the maximum near surface (<5 µm depth) deuterium concentration increased from 0.5 at % D/W in 0.025 dpa samples to 0.8 at. % D/W in 0.3 dpa samples. The large discrepancy between the total retention via thermal desorption spectroscopy and the near surface retention via nuclear reaction analysis indicated the deuterium was migrated and trapped in bulk (at least 50 µm depth for 0.025 dpa and 35 µm depth for 0.025 dpa) at 500 °C case even in the relatively low ion fluence of 10²⁶ m⁻².« less

Enhancement of Curie temperature of barium hexaferrite by dense electronic excitations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Manju; Kashyap, Subhash C.; Gupta, Hem C.

2014-07-15

Curie temperature of polycrystalline barium hexaferrite (BaFe{sub 12}O{sub 19}), prepared by conventional solid state technique, is anomalously and significantly enhanced (by nearly 15%) by energetic heavy ion irradiation (150 MeV, Ag{sup 12+}) at ambient temperature due to dense electronic excitations Moderate fluence (1 × 10{sup 12} ions/cm{sup 2}) induces structural defects giving rise to above enhancement. As established by X-ray diffraction, scanning electron microscopy and Raman studies, higher fluence (1 × 10{sup 13} ions/cm{sup 2}) has structurally transformed the sample to amorphous phase with marginal change in magnetization and Curie temperature.

Absorption and photoluminescence study of Al 2O 3 single crystal irradiated with fast neutrons

NASA Astrophysics Data System (ADS)

Izerrouken, M.; Benyahia, T.

2010-10-01

Colour centers formation in Al 2O 3 by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation's were performed at 40 °C, up to fast neutron ( E n > 1.2 MeV) fluence of 1.4 × 10 18 n cm -2. After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F + center starts to aggregate to F center clusters (F 2, F 2+ and F22+). These aggregates disappear completely above 650 °C whereas the F and F + centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F 2 center and interstitial Ali+ ions.

Using measured 30-150 kVp polychromatic tungsten x-ray spectra to determine ion chamber calibration factors, Nx (Gy C(-1)).

PubMed

Mercier, J R; Kopp, D T; McDavid, W D; Dove, S B; Lancaster, J L; Tucker, D M

2000-10-01

Two methods for determining ion chamber calibration factors (Nx) are presented for polychromatic tungsten x-ray beams whose spectra differ from beams with known Nx. Both methods take advantage of known x-ray fluence and kerma spectral distributions. In the first method, the x-ray tube potential is unchanged and spectra of differing filtration are measured. A primary standard ion chamber with known Nx for one beam is used to calculate the x-ray fluence spectrum of a second beam. Accurate air energy absorption coefficients are applied to the x-ray fluence spectra of the second beam to calculate actual air kerma and Nx. In the second method, two beams of differing tube potential and filtration with known Nx are used to bracket a beam of unknown Nx. A heuristically derived Nx interpolation scheme based on spectral characteristics of all three beams is described. Both methods are validated. Both methods improve accuracy over the current half value layer Nx estimating technique.

Characteristic Behavior and Scaling Studies of Self Organized InP Nano-dots formed via keV and MeV irradiations

NASA Astrophysics Data System (ADS)

Paramanik, Dipak; Varma, Shikha

2008-04-01

The controlled formation of nano-dots, using ion beams as tool, has become important as it offers a unique method to generate non-equilibrium phases with novel physical properties and structures with nano-dimensions. We have investigated the creation of self assembled nano- dots on InP(111) surfaces after 3 keV as well as 1.5 MeV ion beams at a large range of fluences. We have studied the Scaling exponents of the evolved surfaces by utilizing the technique of Scanning Probe Microscopy (SPM). At keV energies ripening of the nano-dots is seen below a critical time whereas an inverse ripening is observed for longer durations. At the critical time square shaped array of nano --dots are observed. The dots are characterized by narrow height and size distributions. Nano dots have also been observed at MeV ion irradiations. Their size distribution though broad at lowest fluence decreases for larger fluences.

Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Teixeira, B. M. S.; Timopheev, A. A.; Caçoilo, N. F. F.; Auffret, S.; Sousa, R. C.; Dieny, B.; Alves, E.; Sobolev, N. A.

2018-05-01

We have used the ferromagnetic resonance in the X-band (9.37 GHz) to investigate the effect of 400 keV Ar+ irradiation on the perpendicular magnetic anisotropy (PMA) and Gilbert damping parameter, α, of double-MgO free layers designed for application in perpendicular magnetic tunnel junctions. The samples comprised a MgO/Fe72Co8B20/X(0.2 nm)/Fe72Co8B20/MgO layer stack, where X stands for an ultrathin Ta or W spacer. Samples with two different total FeCoB layer thicknesses, tFCB = 3.0 nm and tFCB = 2.6 nm, were irradiated with ion fluences ranging from 1012 cm-2 to 1016 cm-2. The effective first-order PMA field, BK1, decreased nearly linearly with the logarithm of the fluence for both FeCoB thicknesses and spacer elements. The decrease in BK1, which is likely caused by an ion-induced intermixing at the FeCoB/MgO interfaces, resulted in a reorientation of the magnetization of the free layers with tFCB = 2.6 nm, initially exhibiting a perpendicular easy-axis anisotropy. For intermediate fluences, 1013 cm-2 and 1014 cm-2, easy-cone states with different cone angles could be induced in the free layer with a W spacer. Importantly, no corresponding increase in the Gilbert damping was observed. This study shows that ion irradiation can be used to tune the easy-cone anisotropy in perpendicular magnetic tunnel junctions, which is interesting for spintronic applications such as spin-torque magnetic memory devices, oscillators, and sensors.

Influence of Ar-irradiation on structural and nanomechanical properties of pure zirconium measured by means of GIXRD and nanoindentation techniques

NASA Astrophysics Data System (ADS)

Kurpaska, L.; Gapinska, M.; Jasinski, J.; Lesniak, M.; Sitarz, M.; Nowakowska-Langier, K.; Jagielski, J.; Wozniak, K.

2016-12-01

An effect of Ar-irradiation on structural and nanomechanical properties of pure zirconium at room temperature was investigated. In order to simulate the radiation damage, the argon ions were implanted into the pure zirconium coupons with fluences ranging from 1 × 1015 to 1 × 1017 cm-2. Prior to irradiation, zirconium samples were chemically polished with a solution of HF/HNO3/H2O. Structural properties of the implanted layer were studied using Grazing Incidence X-Ray Diffraction (GIXRD) technique. The nanomechanical properties of the material were measured by means of nanoindentation technique. The obtained results revealed correlation between Ar-implantation fluence, hardness and structural properties (as confirmed by the modification of the diffraction peaks). Material hardening and peak shift & broadening in GIXD spectra were associated with the local increase of micro-strains, which is related to the increased density of type - dislocation loops. Presented study confirms that the structural changes induced by ion irradiation are directly linked to the mechanical response of the sample.

Self-organized microstructures induced by MeV ion beam on silicon surface

NASA Astrophysics Data System (ADS)

Ahmad, Muthanna

2017-02-01

Micro patterning of self organized structure on silicon surface is induced by ion implantation of energetic (MeV) copper ions. This work reports for the first time the ability of using energetic ions for producing highly ordered ripples and dots of micro sizes. The experiments are realized at the Tandem ion beam accelerator (3 MV) at the IBA laboratory of the Atomic Energy Commission of Syria. Similarly to nano patterning formed by slow ions, the formation of micro patterned structures dots and ripples is observed to be depending on the angle of ion beam incidence, energy and ion fluence. The observation of such microstructures formation is limited to a range of ion energies (few MeV) at fluence higher than 1.75 × 1017 ion cm-2. The patterned surface layer is completely amorphousized by the ion implantation. Shadowing effect is observed in the formation of microripples and superstructures in the top of ripples. The superstructure develops new morphology that is not observed before. This morphology has butterfly shape with symmetry in its structure.

Effect of starting microstructure on helium plasma-materials interaction in tungsten

DOE PAGES

Wang, Kun; Bannister, Mark E.; Meyer, Fred W.; ...

2016-11-24

Here, in a magnetic fusion energy (MFE) device, the plasma-facing materials (PFMs) will be subjected to tremendous fluxes of ions, heat, and neutrons. The response of PFMs to the fusion environment is still not well defined. Tungsten metal is the present candidate of choice for PFM applications such as the divertor in ITER. However, tungsten's microstructure will evolve in service, possibly to include recrystallization. How tungsten's response to plasma exposure evolves with changes in microstructure is presently unknown. In this work, we have exposed hot-worked and recrystallized tungsten to an 80 eV helium ion beam at a temperature of 900more » °C to fluences of 2 × 10 23 or 20 × 10 23 He/m 2. This resulted in a faceted surface structure at the lower fluence or short but well-developed nanofuzz structure at the higher fluence. There was little difference in the hot-rolled or recrystallized material's near-surface (≤50 nm) bubbles at either fluence. At higher fluence and deeper depth, the bubble populations of the hot-rolled and recrystallized were different, the recrystallized being larger and deeper. This may explain previous high-fluence results showing pronounced differences in recrystallized material. The deeper penetration in recrystallized material also implies that grain boundaries are traps, rather than high-diffusivity paths.« less

Electronic linear energy transfer dependent molecular structural growth in polyethylene terephthalate

NASA Astrophysics Data System (ADS)

Biswas, A.; Lotha, S.; Gupta, R.; Avasthi, D. K.; Paul, S. N.

2002-04-01

Thin films (13 μm) of polyethelene terephthalate (PET) are irradiated by different swift metallic heavy ions (180 MeV Ag14+ and 200 MeV Au15+) with the projectile linear energy transfer (LET) (˜10-14 keV/nm), respectively. LET dependence on the molecular structural changes in PFT irradiated at different ion fluences has been studied by the Fourier transform infrared spectroscopy. The study has revealed that beyond a critical LET entirely different pathways of amorphization beginning with partial recrystallization at lower ion fluence impact occurs in PET, contrary to the earlier established results. At considerably higher LET (˜14 keV/nm), the most characteristic crystalline stretching and bending vibration bands such as at 850 cm-1 (CH2 rocking), 972 cm-1 (C=O stretching), 1341 and 1471 cm-1 (CH2 bending) in PET have shown a significant rise in the respective infrared absorbance intensities upon lower ion fluence (˜1011 ions/cm2) impact. The absence of previously reported unsaturations such as alkynes at both the LET beam used are also observed. Interestingly, the aromatic system also appears to be unstable and participating in the modification process, particularly at the higher LET (˜14 KeV/nm). Possible interpretations are discussed.

Fragmentation studies of relativistic iron ions using plastic nuclear track detectors.

PubMed

Scampoli, P; Durante, M; Grossi, G; Manti, L; Pugliese, M; Gialanella, G

2005-01-01

We measured fluence and fragmentation of high-energy (1 or 5 A GeV) 56Fe ions accelerated at the Alternating Gradient Synchrotron or at the NASA Space Radiation Laboratory (Brookhaven National Laboratory, NY, USA) using solid-state CR-39 nuclear track detectors. Different targets (polyethylene, PMMA, C, Al, Pb) were used to produce a large spectrum of charged fragments. CR-39 plastics were exposed both in front and behind the shielding block (thickness ranging from 5 to 30 g/cm2) at a normal incidence and low fluence. The radiation dose deposited by surviving Fe ions and charged fragments was measured behind the shield using an ionization chamber. The distribution of the measured track size was exploited to distinguish the primary 56Fe ions tracks from the lighter fragments. Measurements of projectile's fluence in front of the shield were used to determine the dose per incident particle behind the block. Simultaneous measurements of primary 56Fe ion tracks in front and behind the shield were used to evaluate the fraction of surviving iron projectiles and the total charge-changing fragmentation cross-section. These physical measurements will be used to characterize the beam used in parallel biological experiments. c2005 COSPAR. Published by Elsevier Ltd. All rights reserved.

Ion beam induced defects in solids studied by optical techniques

NASA Astrophysics Data System (ADS)

Comins, J. D.; Amolo, G. O.; Derry, T. E.; Connell, S. H.; Erasmus, R. M.; Witcomb, M. J.

2009-08-01

Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems. X- and Y-cut LiNbO 3 crystals implanted with 8 MeV Au 3+ ions with a fluence of 1 × 10 17 ions/cm 2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold. Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the I3- structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of I3- and I5- aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed. The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 10 17 ions/cm 2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering. Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 10 15 to 250 × 10 15 ions/cm -2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.

Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Toda, Yoshitake; Hayashi, Katsuro; Hirano, Masahiro; Kamiya, Toshio; Matsunami, Noriaki; Hosono, Hideo

2005-01-01

Inert gas ion implantation (acceleration voltage 300kV) into polycrystalline 12CaO.7Al2O3 (C12A7) films was investigated with fluences from 1×1016 to 1×1017cm-2 at elevated temperatures. Upon hot implantation at 600°C with fluences greater than 1×1017cm-2, the obtained films were colored and exhibited high electrical conductivity in the as-implanted state. The extrusion of O2- ions encaged in the crystallographic cages of C12A7 crystal, which leaves electrons in the cages at concentrations up to ˜1.4×1021cm-3, may cause the high electrical conductivity. On the other hand, when the fluence is less than 1×1017cm-2, the as-implanted films are optically transparent and electrically insulating. The conductivity is enhanced and the films become colored by irradiating with ultraviolet light due to the formation of F +-like centers. The electrons forming the F+-like centers are photo released from the encaged H- ions, which are presumably derived from the preexisting OH- groups. The induced electron concentration is proportional to the calculated displacements per atom, which suggests that nuclear collision effects of the implanted ions play a dominant role in forming the electron and H- ion in the films. The hot ion implantation technique provides a nonchemical process for preparing electronic conductive C12A7 films.

Optical characterization of poly(methyl methacrylate) implanted with low energy ions

NASA Astrophysics Data System (ADS)

Gupta, Renu; Kumar, Vijay; Goyal, Parveen Kumar; Kumar, Shyam

2012-12-01

The samples of poly(methyl methacrylate) (PMMA) were subjected to 100 keV N+ and Ar+ ion implantation up to a maximum fluence of 2 × 1016 ions/cm2. The effect of ion implantation on the optical energy gap and the refractive index has been studied through UV-visible spectroscopy. The results clearly indicate a decrease in the values of optical energy gap and an increase in the values of refractive index as an effect of ion implantation corresponding to both of the ions. It has also been observed that the changes induced by the implanted ions are more pronounced for N+ ions in comparison to Ar+ ions. This variation has been correlated with the calculated ranges of these ions in PMMA polymer using Stopping and Range of Ions in Matter (SRIM) code. Finally, an attempt has been made to correlate all the observed changes with the induced structural changes as revealed through Raman spectroscopy.

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

NASA Astrophysics Data System (ADS)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

A comparative study on the analytical utility of atmospheric and low-pressure MALDI sources for the mass spectrometric characterization of peptides.

PubMed

Moskovets, Eugene; Misharin, Alexander; Laiko, Viktor; Doroshenko, Vladimir

2016-07-15

A comparative MS study was conducted on the analytical performance of two matrix-assisted laser desorption/ionization (MALDI) sources that operated at either low pressure (∼1Torr) or at atmospheric pressure. In both cases, the MALDI sources were attached to a linear ion trap mass spectrometer equipped with a two-stage ion funnel. The obtained results indicate that the limits of detection, in the analysis of identical peptide samples, were much lower with the source that was operated slightly below the 1-Torr pressure. In the low-pressure (LP) MALDI source, ion signals were observed at a laser fluence that was considerably lower than the one determining the appearance of ion signals in the atmospheric pressure (AP) MALDI source. When the near-threshold laser fluences were used to record MALDI MS spectra at 1-Torr and 750-Torr pressures, the level of chemical noise at the 1-Torr pressure was much lower compared to that at AP. The dependency of the analyte ion signals on the accelerating field which dragged the ions from the MALDI plate to the MS analyzer are presented for the LP and AP MALDI sources. The study indicates that the laser fluence, background gas pressure, and field accelerating the ions away from a MALDI plate were the main parameters which determined the ion yield, signal-to-noise (S/N) ratios, the fragmentation of the analyte ions, and adduct formation in the LP and AP MALDI MS methods. The presented results can be helpful for a deeper insight into the mechanisms responsible for the ion formation in MALDI. Copyright © 2016 Elsevier Inc. All rights reserved.

Group III impurities Si interstitials interaction caused by ion irradiation

NASA Astrophysics Data System (ADS)

Romano, L.; Piro, A. M.; De Bastiani, R.; Grimaldi, M. G.; Rimini, E.

2006-01-01

The off-lattice displacement of substitutional impurities (B, Ga) in Si caused by irradiation with energetic light ion beams has been investigated. Samples have been prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 × 1020 at/cm3 confined in a 300 nm thick surface region. The off-lattice displacement of the impurities was induced at room temperature (RT) by irradiation with high energy (>600 keV) light ion beams (H, He) and detected by the channelling technique along different axes, using the 11B(p,α)8Be reaction and standard RBS, for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation, until it saturates at χF < 1 suggesting a non-random displacement of the dopant. Although the precise value of χF depends on the channelling direction and dopant species, the off-lattice displacement rate, deduced from the χ versus interstitial fluence curve, only depends on the excess of Si self-interstitials (SiI) generated by the irradiating beam through a parameter σ that can be interpreted as an effective cross-section for the impurity-SiI interaction.

Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

NASA Astrophysics Data System (ADS)

Sangwijit, K.; Yu, L. D.; Sarapirom, S.; Pitakrattananukool, S.; Anuntalabhochai, S.

2015-12-01

Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 1012 to 1 × 1017 ions/cm2 treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y 2SiO 5 crystal

DOE PAGES

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; ...

2017-01-28

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this study, we used 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated Y 2SiO 5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prismmore » coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. Finally, 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.« less

Importance of ion bombardment during coverage of Au nanoparticles on their structural features and optical response

DOE Office of Scientific and Technical Information (OSTI.GOV)

Resta, V.; Peláez, R. J.; Afonso, C. N.

2014-03-28

This work studies the changes in the optical response and morphological features of 6 ± 1 nm diameter Au nanoparticles (NPs) when covered by a layer of a-Al{sub 2}O{sub 3} by pulsed laser deposition (PLD). The laser fluence used for ablating the Al{sub 2}O{sub 3} target is varied in order to modify the kinetic energy (KE) of the species bombarding the NPs during their coverage. When the ion KE < 200 eV, the structural features and optical properties of the NPs are close to those of uncovered ones. Otherwise, a shift to the blue and a strong damping of the surface plasmon resonance is observed asmore » fluence is increased. There are two processes responsible for these changes, both related to aluminum ions arriving to the substrate during the coverage process, i.e., sputtering of the metal and implantation of aluminum species in the metal. Both processes have been simulated using standard models for ion bombardment, the calculated effective implanted depths allow explaining the observed changes in the optical response, and the use of a size-dependent sputtering coefficient for the Au NPs predicts the experimental sputtering fractions. In spite of the work is based on PLD, the concepts investigated and conclusions can straightforwardly be extrapolated to other physical vapor deposition techniques or processes involving ion bombardment of metal NPs by ions having KE > 200 eV.« less

Deuterium Retention and Physical Sputtering of Low Activation Ferritic Steel

NASA Astrophysics Data System (ADS)

T, Hino; K, Yamaguchi; Y, Yamauchi; Y, Hirohata; K, Tsuzuki; Y, Kusama

2005-04-01

Low activation materials have to be developed toward fusion demonstration reactors. Ferritic steel, vanadium alloy and SiC/SiC composite are candidate materials of the first wall, vacuum vessel and blanket components, respectively. Although changes of mechanical-thermal properties owing to neutron irradiation have been investigated so far, there is little data for the plasma material interactions, such as fuel hydrogen retention and erosion. In the present study, deuterium retention and physical sputtering of low activation ferritic steel, F82H, were investigated by using deuterium ion irradiation apparatus. After a ferritic steel sample was irradiated by 1.7 keV D+ ions, the weight loss was measured to obtain the physical sputtering yield. The sputtering yield was 0.04, comparable to that of stainless steel. In order to obtain the retained amount of deuterium, technique of thermal desorption spectroscopy (TDS) was employed to the irradiated sample. The retained deuterium desorbed at temperature ranging from 450 K to 700 K, in the forms of DHO, D2, D2O and hydrocarbons. Hence, the deuterium retained can be reduced by baking with a relatively low temperature. The fluence dependence of retained amount of deuterium was measured by changing the ion fluence. In the ferritic steel without mechanical polish, the retained amount was large even when the fluence was low. In such a case, a large amount of deuterium was trapped in the surface oxide layer containing O and C. When the fluence was large, the thickness of surface oxide layer was reduced by the ion sputtering, and then the retained amount in the oxide layer decreased. In the case of a high fluence, the retained amount of deuterium became comparable to that of ferritic steel with mechanical polish or SS 316L, and one order of magnitude smaller than that of graphite. When the ferritic steel is used, it is required to remove the surface oxide layer for reduction of fuel hydrogen retention. Ferritic steel sample was exposed to the environment of JFT-2M tokamak in JAERI and after that the deuterium retention was examined. The result was roughly the same as the case of deuterium ion irradiation experiment.

Matching the laser wavelength to the absorption properties of matrices increases the ion yield in UV-MALDI mass spectrometry.

PubMed

Wiegelmann, Marcel; Soltwisch, Jens; Jaskolla, Thorsten W; Dreisewerd, Klaus

2013-09-01

A high analytical sensitivity in ultraviolet matrix-assisted laser desorption ionization mass spectrometry (MALDI-MS) is only achieved if the laser wavelength corresponds to a high optical absorption of the matrix. Laser fluence and the physicochemical properties of the compounds, e.g., the proton affinity, also influence analytical sensitivity significantly. In combination, these parameters determine the amount of material ejected per laser pulse and the ion yield, i.e., the fraction of ionized biomolecules. Here, we recorded peptide ion signal intensities as a function of these parameters. Three cinnamic acid matrices were investigated: α-cyano-4-hydroxycinnamic acid, α-cyano-4-chlorocinnamic acid, and α-cyano-2,4-difluorocinnamic acid. In addition, 2,5-dihydroxybenzoic acid was used in comparison experiments. Ion signal intensities "per laser shot" and integrated ion signal intensities were acquired over 900 consecutive laser pulses applied on distinct positions on the dried-droplet sample preparations. With respect to laser wavelength, the two standard MALDI wavelengths of 337/355 nm were investigated. Also, 305 or 320 nm was selected to account for the blue-shifted absorption profiles of the halogenated derivatives. Maximal peptide ion intensities were obtained if the laser wavelength fell within the peak of the absorption profile of the compound and for fluences two to three times the corresponding ion detection threshold. The results indicate ways for improving the analytical sensitivity in MALDI-MS, and in particular for MALDI-MS imaging applications where a limited amount of material is available per irradiated pixel.

Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Sandeep Kumar; Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067; Cuerno, Rodolfo

We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of patternmore » formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE PAGES

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2017-11-15

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO2

NASA Astrophysics Data System (ADS)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2018-01-01

The accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 ×1016 cm-2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Study on structural recovery of graphite irradiated with swift heavy ions at high temperature

NASA Astrophysics Data System (ADS)

Pellemoine, F.; Avilov, M.; Bender, M.; Ewing, R. C.; Fernandes, S.; Lang, M.; Li, W. X.; Mittig, W.; Schein, M.; Severin, D.; Tomut, M.; Trautmann, C.; Zhang, F. X.

2015-12-01

Thin graphite foils bombarded with an intense high-energy (8.6 MeV/u) gold beam reaching fluences up to 1 × 1015 ions/cm2 lead to swelling and electrical resistivity changes. As shown earlier, these effects are diminished with increasing irradiation temperature. The work reported here extends the investigation of beam induced changes of these samples by structural analysis using synchrotron X-ray diffraction and transmission electron microscope. A nearly complete recovery from swelling at irradiation temperatures above about 1500 °C is identified.

Measurements of the sensitivity of radiochromic film using ion beams

NASA Astrophysics Data System (ADS)

Steidle, J. A.; Shortino, J. P.; Ellison, D. M.; Freeman, C. G.; Sangster, T. C.

2013-10-01

Radiochromic film (RCF) is used in several diagnostics as a dosimeter that chromatically responds to incident particles. This response depends on the fluence, energy, and species of the incident particles. A 1.7 MV tandem Pelletron accelerator is used to create a monoenergetic ion beam which is scattered off a thin gold target onto a strip of RCF. A surface barrier detector is positioned behind a small hole in the film to measure the ion fluence on the nearby film. Once the film develops, it is scanned to examine its optical density. A response curve is acquired by fitting a three parameter formula to optical density and dose. These calibration curves can be used to help determine incident doses in a variety of situations.

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

NASA Technical Reports Server (NTRS)

Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L.; Kim, Hak; Phan, Anthony; Seidleck, Christina; Label, Kenneth

2016-01-01

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

Radiation-quality dependent cellular response in mutation induction in normal human cells.

PubMed

Suzuki, Masao; Tsuruoka, Chizuru; Uchihori, Yukio; Kitamura, Hisashi; Liu, Cui Hua

2009-09-01

We studied cellular responses in normal human fibroblasts induced with low-dose (rate) or low-fluence irradiations of different radiation types, such as gamma rays, neutrons and high linear energy transfer (LET) heavy ions. The cells were pretreated with low-dose (rate) or low-fluence irradiations (approximately 1 mGy/7-8 h) of 137Cs gamma rays, 241Am-Be neutrons, helium, carbon and iron ions before irradiations with an X-ray challenging dose (1.5 Gy). Helium (LET = 2.3 keV/microm), carbon (LET = 13.3 keV/microm) and iron (LET = 200 keV/microm) ions were produced by the Heavy Ion Medical Accelerator in Chiba (HIMAC), Japan. No difference in cell-killing effect, measured by a colony forming assay, was observed among the pretreatment with different radiation types. In mutation induction, which was detected in the hypoxanthine-guanine phosphoribosyltransferase (hprt) locus to measure 6-thioguanine resistant clones, there was no difference in mutation frequency induced by the X-ray challenging dose between unpretreated and gamma-ray pretreated cells. In the case of the pretreatment of heavy ions, X-ray-induced mutation was around 1.8 times higher in helium-ion pretreated and 4.0 times higher in carbon-ion pretreated cells than in unpretreated cells (X-ray challenging dose alone). However, the mutation frequency in cells pretreated with iron ions was the same level as either unpretreated or gamma-ray pretreated cells. In contrast, it was reduced at 0.15 times in cells pretreated with neutrons when compared to unpretreated cells. The results show that cellular responses caused by the influence of hprt mutation induced in cells pretreated with low-dose-rate or low-fluence irradiations of different radiation types were radiation-quality dependent manner.

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

NASA Astrophysics Data System (ADS)

Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Compositional transformations in ion implanted polymers

NASA Astrophysics Data System (ADS)

Abdul-Kader, A. M.; Turos, A.; Grambole, D.; Jagielski, J.; Piątkowska, A.; Madi, N. K.; Al-Maadeed, M.

2005-10-01

Changes of surface layer composition produced by ion bombardment of polyethylene and polypropylene samples were studied. These materials are under consideration for load bearing surfaces in biological and technical applications. To improve their tribological properties, surface layers are usually modified by ionizing radiation. Therefore, to study the mechanism of transformations induced by ion beam bombardment selected polymers were implanted with H, He and Ar ions to the fluences ranging from 1 × 1013 to 2 × 1016/cm2. RBS and NRA techniques were applied for sample analysis. Important hydrogen release was observed with increasing ion dose and was correlated with the ion stopping power. Another important effect observed was the rapid oxidation of samples, which apparently occurs after exposure of implanted samples to the air. Up to 10 at.% of oxygen can be incorporated in the implanted layer.

Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa

2013-10-14

Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachmentmore » properties.« less

Dielectric functions, chemical and atomic compositions of the near surface layers of implanted GaAs by In+ ions

NASA Astrophysics Data System (ADS)

Kulik, M.; Kołodyńska, D.; Bayramov, A.; Drozdziel, A.; Olejniczak, A.; Żuk, J.

2018-06-01

The surfaces of (100) GaAs were irradiated with In+ ions. The implanted samples were isobaric annealed at 800 °C and then of dielectric function, the surface atomic concentrations of atoms and also the chemical composition of the near surface layers in these implanted semiconductor samples were obtained. The following investigation methods were used: spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry analyses (RBSA) and X-ray photoelectron spectroscopy (XPS) in the study of the above mentioned quantities, respectively. The change of the shape spectra of the dielectric functions at about 3.0 eV phonon energy, diffusion of In+ ions as well as chemical composition changes were observed after ion implantation and the thermal treatment. Due to displacement of Ga ions from GaAs by the In+ ions the new chemical compound InAs was formed. The relative amounts Ga2O3 and As2O3 ratio increase in the native oxide layers with the fluences increase after the thermal treatment of the samples. Additionally, it was noticed that the quantities of InO2 increase with the increasing values of the irradiated ions before thermal treatment.

Role of atomic-level defects and electronic energy loss on amorphization in LiNbO3 single crystals

NASA Astrophysics Data System (ADS)

Sellami, N.; Crespillo, M. L.; Xue, H.; Zhang, Y.; Weber, W. J.

2017-08-01

Understanding complex non-equilibrium defect processes, where multiple irradiation mechanisms may take place simultaneously, is a long standing subject in material science. The separate and combined effects of elastic and inelastic energy loss are a very complicated and challenging topic. In this work, LiNbO3 has been irradiated with 0.9 MeV Si+ and 8 MeV O3+, which are representative of regimes where nuclear (S n) and electronic (S e) energy loss are dominant, respectively. The evolution of damage has been investigated by Rutherford backscattering spectrometry (RBS) in channeling configuration. Pristine samples were irradiated with 0.9 MeV Si+ ions to create different pre-existing damage states. Below the threshold (S e,th  =  5-6 keV nm-1) for amorphous track formation in this material, irradiation of the pristine samples with a highly ionizing beam of 8 MeV O3+ ions, with nearly constant S e of about 3 keV nm-1, induces a crystalline to amorphous phase transition at high ion fluences. In the pre-damaged samples, the electronic energy loss from the 8 MeV O3+ ions interacts synergistically with the pre-existing damage, resulting in a rapid, non-linear increase in damage production. There is a significant reduction in the incubation fluence for rapid amorphization with the increasing amount of pre-existing damage. These results highlight the important role of atomic-level defects on increasing the sensitivity of some oxides to amorphization induced by electronic energy loss. Controlling the nature and amount of pre-damage may provide a new approach to tuning optical properties for photonic device applications.

Charged Particle Detection: Potential of Love Wave Acoustic Devices

NASA Astrophysics Data System (ADS)

Pedrick, Michael; Tittmann, Bernhard

2006-03-01

An investigation of the dependence of film density on group and phase velocities in a Love Wave Device shows potential for acoustic-based charged particle detection (CPD). Exposure of an ion sensitive photoresist to charged particles causes localized changes in density through either scission or cross-linking. A theoretical model was developed to study ion fluence effects on Love Wave sensitivity based on: ion energy, effective density changes, layer thickness and mode selection. The model is based on a Poly(Methyl Methacralate) (PMMA) film deposited on a Quartz substrate. The effect of Helium ion fluence on the properties of PMMA has previously been studied. These guidelines were used as an initial basis for the prediction of helium ion detection in a PMMA layer. Procedures for experimental characterization of ion effects on the material properties of PMMA are reviewed. Techniques for experimental validation of the predicted velocity shifts are discussed. A Love Wave Device for CPD could potentially provide a cost-effective alternative to semiconductor or photo-based counterparts. The potential for monitoring ion implantation effects on material properties is also discussed.

Ion irradiation induced effects and magnetization reversal mechanism in (Ni80Fe20)1-xCox nanowires and nanotubes

NASA Astrophysics Data System (ADS)

Ahmad, Naeem; Iqbal, Javed; Chen, J. Y.; Hussain, Asim; Shi, D. W.; Han, X. F.

2015-03-01

The effect of Co on the ferromagnetic characteristics of the Ni80Fe20 nanocylinders having zero magnetostriction and soft magnetic nature is an interesting field of research. The (Ni80Fe20)1-xCox nanocylinders have been prepared by electrodeposition into commercially available anodized aluminum oxide (AAO) nanoporous templates. The analysis of magnetization reversal from the angular dependence of coercivity has been studied in detail. This angular dependence of coercivity has shown a transition from curling to nucleation mode as a function of field angle for all (Ni80Fe20)1-xCox nanocylinders depending upon the critical angle. The shape anisotropy, dipole-dipole interactions, surface effects and magnetocrystalline anisotropy have been found to play an effective role for the spontaneous magnetization in nanowires and nanotubes. It has been interestingly observed that the magnetostatic interactions or dipole-dipole interactions are dominant in nanocylinders regardless of its geometry. Furthermore, the prepared samples have been irradiated with He2+ ions (energy E=2 MeV, fluence=1014 ions/cm2 and ion current=16 nA) at room temperature using a 5-UDH-2pelletron tandem accelerator. The irradiations have created defects and these defects have induced changes in magnetization as a result an increase in coercivity as function of the ion fluences is observed. Such kind of behavior in coercivity enhancement and magnetization reduction can also be attributed to the stress relaxation and percolation in nonuniform states of ferromagnetic alloys, respectively.

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Effects of C3+ ion irradiation on structural, electrical and magnetic properties of Ni nanotubes

NASA Astrophysics Data System (ADS)

Shlimas, D. I.; Kozlovskiy, A. L.; Zdorovets, M. V.; Kadyrzhanov, K. K.; Uglov, V. V.; Kenzhina, I. E.; Shumskaya, E. E.; Kaniukov, E. Y.

2018-03-01

Ion irradiation is an attractive method for obtaining nanostructures that can be used under extreme conditions. Also, it is possible to control the technological process that allows obtaining nanomaterials with new properties at ion irradiation. In this paper, we study the effect of irradiation with 28 MeV C3+ ions and fluences up to 5 × 1011 cm-2 on the structure and properties of template-synthesized nickel nanotubes with a length of 12 μm, with diameters of 400 nm, and a wall thickness of 100 nm. It is demonstrated that the main factor influencing the degradation of nanostructures under irradiation in PET template is the processes of mixing the material of nanostructures with the surrounding polymer. The influence of irradiation with various fluences on the crystal structure, electrical and magnetic properties of nickel nanotubes is studied.

Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

NASA Astrophysics Data System (ADS)

Secchi, M.; Demenev, E.; Colaux, J. L.; Giubertoni, D.; Dell'Anna, R.; Iacob, E.; Gwilliam, R. M.; Jeynes, C.; Bersani, M.

2015-11-01

This work presents a study of application of secondary ion mass spectrometry (SIMS) to measure tin concentration in Ge1-xSnx alloy with x higher than solid solubility ∼1%, i.e. well above the diluted regime where SIMS measurements usually provide the most reliable quantitative results. SIMS analysis was performed on Sn+ ion implanted Ge films, epitaxially deposited on Si, and on chemical vapor deposition deposited Ge0.93Sn0.07 alloy. Three SIMS conditions were investigated, varying primary beam ion species and secondary ion polarity keeping 1 keV impact energy. Best depth profile accuracy, best agreement with the fluences measured by Rutherford backscattering spectrometry, good detection limit (∼1 × 1017 at/cm3) and depth resolution (∼2 nm/decade) are achieved in Cs+/SnCs+ configuration. However, applied sputtering conditions (Cs+ 1 keV, 64° incidence vs. normal) induced an early formation of surface topography on the crater bottom resulting in significant variation of sputtering yield. Atomic force microscopy shows a peculiar topography developed on Ge: for oblique incidence, a topography consisting in a sequence of dots and ripples was observed on the crater bottom. This behavior is unusual for grazing incidence and has been observed to increase with the Cs+ fluence. Rotating sample during sputtering prevents this ripple formation and consequently improves the depth accuracy.

Formation of Ti-Al-Cr-B-N coatings by ion-magnetron sputtering of composite targets

NASA Astrophysics Data System (ADS)

Sergeev, Oleg V.; Kalashnikov, Mark P.; Voronov, Andrey V.; Sergeev, Victor P.; Panin, Victor E.

2017-12-01

The research addresses the influence of bombardment by high-energy ions (Cr + B)+ with a low fluence 4 × 1017 cm-2 on the tribological and mechanical properties of Ti-Al-N coatings. The wear resistance decreases 2.6 times whereas the microhardness decreases 1.2 times. The structural-phase state and the chemical composition of the surface layer of the modified coating are determined. The research is carried out by transmission and scanning of the electron microscopy and the secondary ion mass spectrometry. In the ion-modified coating layer the average concentration of titanium, aluminum and nitrogen decreases and those of chromium and boron increase when at a fluence of 4 × 1017 cm-2 the maximum values of Cr and B reach 16 and 23 at %, respectively, and the minimum values of Ti, Al and N amount to 15, 7 and 39 at %. In this layer the columnar structure is broken; its volume is divided into the alternative local nanosize zone-crystalline and amorphous. The phase composition of the crystalline regions is represented by TiN and AlN phases and a new CrB4 phase. The observed decrease of the tribomechanical properties can be due to both the amorphization of the surface layer and the transformation of a high-strength phase in a brittle one.

Focused-ion-beam-inflicted surface amorphization and gallium implantation--new insights and removal by focused-electron-beam-induced etching.

PubMed

Roediger, P; Wanzenboeck, H D; Waid, S; Hochleitner, G; Bertagnolli, E

2011-06-10

Recently focused-electron-beam-induced etching of silicon using molecular chlorine (Cl(2)-FEBIE) has been developed as a reliable and reproducible process capable of damage-free, maskless and resistless removal of silicon. As any electron-beam-induced processing is considered non-destructive and implantation-free due to the absence of ion bombardment this approach is also a potential method for removing focused-ion-beam (FIB)-inflicted crystal damage and ion implantation. We show that Cl(2)-FEBIE is capable of removing FIB-induced amorphization and gallium ion implantation after processing of surfaces with a focused ion beam. TEM analysis proves that the method Cl(2)-FEBIE is non-destructive and therefore retains crystallinity. It is shown that Cl(2)-FEBIE of amorphous silicon when compared to crystalline silicon can be up to 25 times faster, depending on the degree of amorphization. Also, using this method it has become possible for the first time to directly investigate damage caused by FIB exposure in a top-down view utilizing a localized chemical reaction, i.e. without the need for TEM sample preparation. We show that gallium fluences above 4 × 10(15) cm(-2) result in altered material resulting from FIB-induced processes down to a depth of ∼ 250 nm. With increasing gallium fluences, due to a significant gallium concentration close beneath the surface, removal of the topmost layer by Cl(2)-FEBIE becomes difficult, indicating that gallium serves as an etch stop for Cl(2)-FEBIE.

Thermal defect annealing of swift heavy ion irradiated ThO2

NASA Astrophysics Data System (ADS)

Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; Ewing, Rodney C.; Trautmann, Christina; Lang, Maik

2017-08-01

Isochronal annealing, neutron total scattering, and Raman spectroscopy were used to characterize the structural recovery of polycrystalline ThO2 irradiated with 2-GeV Au ions to a fluence of 1 × 1013 ions/cm2. Neutron diffraction patterns show that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275-425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

Simulated space radiation-induced mutants in the mouse kidney display widespread genomic change

PubMed Central

Grygoryev, Dmytro; Lasarev, Michael; Ohlrich, Anna; Rwatambuga, Furaha A.; Johnson, Sorrel; Dan, Cristian; Eckelmann, Bradley; Hryciw, Gwen; Mao, Jian-Hua; Snijders, Antoine M.; Gauny, Stacey; Kronenberg, Amy

2017-01-01

Exposure to a small number of high-energy heavy charged particles (HZE ions), as found in the deep space environment, could significantly affect astronaut health following prolonged periods of space travel if these ions induce mutations and related cancers. In this study, we used an in vivo mutagenesis assay to define the mutagenic effects of accelerated 56Fe ions (1 GeV/amu, 151 keV/μm) in the mouse kidney epithelium exposed to doses ranging from 0.25 to 2.0 Gy. These doses represent fluences ranging from 1 to 8 particle traversals per cell nucleus. The Aprt locus, located on chromosome 8, was used to select induced and spontaneous mutants. To fully define the mutagenic effects, we used multiple endpoints including mutant frequencies, mutation spectrum for chromosome 8, translocations involving chromosome 8, and mutations affecting non-selected chromosomes. The results demonstrate mutagenic effects that often affect multiple chromosomes for all Fe ion doses tested. For comparison with the most abundant sparsely ionizing particle found in space, we also examined the mutagenic effects of high-energy protons (1 GeV, 0.24 keV/μm) at 0.5 and 1.0 Gy. Similar doses of protons were not as mutagenic as Fe ions for many assays, though genomic effects were detected in Aprt mutants at these doses. Considered as a whole, the data demonstrate that Fe ions are highly mutagenic at the low doses and fluences of relevance to human spaceflight, and that cells with considerable genomic mutations are readily induced by these exposures and persist in the kidney epithelium. The level of genomic change produced by low fluence exposure to heavy ions is reminiscent of the extensive rearrangements seen in tumor genomes suggesting a potential initiation step in radiation carcinogenesis. PMID:28683078

Simulated space radiation-induced mutants in the mouse kidney display widespread genomic change.

PubMed

Turker, Mitchell S; Grygoryev, Dmytro; Lasarev, Michael; Ohlrich, Anna; Rwatambuga, Furaha A; Johnson, Sorrel; Dan, Cristian; Eckelmann, Bradley; Hryciw, Gwen; Mao, Jian-Hua; Snijders, Antoine M; Gauny, Stacey; Kronenberg, Amy

2017-01-01

Exposure to a small number of high-energy heavy charged particles (HZE ions), as found in the deep space environment, could significantly affect astronaut health following prolonged periods of space travel if these ions induce mutations and related cancers. In this study, we used an in vivo mutagenesis assay to define the mutagenic effects of accelerated 56Fe ions (1 GeV/amu, 151 keV/μm) in the mouse kidney epithelium exposed to doses ranging from 0.25 to 2.0 Gy. These doses represent fluences ranging from 1 to 8 particle traversals per cell nucleus. The Aprt locus, located on chromosome 8, was used to select induced and spontaneous mutants. To fully define the mutagenic effects, we used multiple endpoints including mutant frequencies, mutation spectrum for chromosome 8, translocations involving chromosome 8, and mutations affecting non-selected chromosomes. The results demonstrate mutagenic effects that often affect multiple chromosomes for all Fe ion doses tested. For comparison with the most abundant sparsely ionizing particle found in space, we also examined the mutagenic effects of high-energy protons (1 GeV, 0.24 keV/μm) at 0.5 and 1.0 Gy. Similar doses of protons were not as mutagenic as Fe ions for many assays, though genomic effects were detected in Aprt mutants at these doses. Considered as a whole, the data demonstrate that Fe ions are highly mutagenic at the low doses and fluences of relevance to human spaceflight, and that cells with considerable genomic mutations are readily induced by these exposures and persist in the kidney epithelium. The level of genomic change produced by low fluence exposure to heavy ions is reminiscent of the extensive rearrangements seen in tumor genomes suggesting a potential initiation step in radiation carcinogenesis.

Surface-conductivity enhancement of PMMA by keV-energy metal-ion implantation

NASA Astrophysics Data System (ADS)

Bannister, M. E.; Hijazi, H.; Meyer, H. M.; Cianciolo, V.; Meyer, F. W.

2014-11-01

An experiment has been proposed to measure the neutron electric dipole moment (nEDM) with high precision at the Oak Ridge National Laboratory (ORNL) Spallation Neutron Source. One of the requirements of this experiment is the development of PMMA (Lucite) material with a sufficiently conductive surface to permit its use as a high-voltage electrode while immersed in liquid He. At the ORNL Multicharged Ion Research Facility, an R&D activity is under way to achieve suitable surface conductivity in poly-methyl methacrylate (PMMA) using metal ion implantation. The metal implantation is performed using an electron-cyclotron-resonance (ECR) ion source and a recently developed beam line deceleration module that is capable of providing high flux beams for implantation at energies as low as a few tens of eV. The latter is essential for reaching implantation fluences exceeding 1 × 1016 cm-2, where typical percolation thresholds in polymers have been reported. In this contribution, we report results on initial implantation of Lucite by Ti and W beams with keV energies to average fluences in the range 0.5-6.2 × 1016 cm-2. Initial measurements of surface-resistivity changes are reported as function of implantation fluence, energy, and sample temperature. We also report X-ray photoelectron spectroscopy (XPS) surface and depth profiling measurements of the ion implanted samples, to identify possible correlations between the near surface and depth resolved implanted W concentrations and the measured surface resistivities.

Impact of nucleation of carbonaceous clusters on structural, electrical and optical properties of Cr+-implanted PMMA

NASA Astrophysics Data System (ADS)

Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Aziz, Uzma

2016-09-01

Specimens of polymethylmethacrylate (PMMA) have been implanted with 400 keV Cr+ ions at different ion fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The possible chemical reactions involved in the nucleation of conjugated carbonaceous clusters in implanted PMMA are discussed. Furthermore, impact of formation of carbonaceous clusters on structural, optical, electrical and morphological properties of implanted PMMA has been examined. The structural modifications in implanted PMMA are observed by Raman spectroscopy. The variation in optical band gap and Urbach energy is measured using UV-visible spectroscopic analysis. The effects of Cr+ ion implantation on electrical and morphological properties are investigated by four-probe apparatus and atomic force microscopy, respectively. The Raman spectroscopic analysis confirmed the formation of carbonaceous clusters with the transformation of implanted layer of PMMA into amorphous carbon. Simultaneously, the optical band gap of implanted PMMA has reduced from 3.13 to 0.85 eV. The increase in Urbach energy favors the decline in band gap together with the structural modification in implanted PMMA. As a result of Cr+ ion implantation, the electrical conductivity of PMMA has improved from 2.14 ± 0.06 × 10-10 S/cm (pristine) to 7.20 ± 0.36 × 10-6 S/cm. The AFM images revealed a decrease in surface roughness with an increment in ion fluence up to 5 × 1014 ions/cm2. The modification in the electrical, optical and structural properties makes the PMMA a promising candidate for its future utilization, as a semiconducting and optically active material, in various fields like plastic electronics and optoelectronic devices.

Formation and characterization of Ta2O5/TaOx films formed by O ion implantation

NASA Astrophysics Data System (ADS)

Ruffell, S.; Kurunczi, P.; England, J.; Erokhin, Y.; Hautala, J.; Elliman, R. G.

2013-07-01

Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current-voltage and capacitance-voltage measurements. The measurements show that Ta2O5/TaOx oxide/suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

Effects of helium ion implantation on the surface morphology of tungsten at high temperature for the first wall armor and divertor plates of fusion reactors

NASA Astrophysics Data System (ADS)

Zenobia, Samuel J.

Three devices at the University of Wisconsin-Madison Inertial Electrostatic Confinement (UW IEC) laboratory were used to implant W and W alloys with helium ions at high temperatures. These devices were HOMER, HELIOS, and the Materials Irradiation Experiment (MITE-E). The research presented in this thesis will focus on the experiments carried out utilizing the MITE-E. Early UW work in HOMER and HELIOS on silicon carbide, carbon velvet, W-coated carbon velvet, fine-grain W, nano-grain W, W needles, and single- and polycrystalline W showed that these materials were not resistant to He+ implantation above ˜800 °C. Unalloyed W developed a "coral-like" surface morphology after He+ implantation, but appeared to be the most robust material investigated. The MITE-E used an ion gun technology to implant tungsten with 30 keV He+. Tungsten specimens were implanted at 900 °C to total average fluences of 6x1016 -- 6x1018 He +/cm2. Other specimens were implanted to a total average fluence of 5x1018 He+/cm2 at temperatures between 500 and 900 °C. Micrographs of the implanted W specimens revealed the development of three distinct surface morphologies. These morphologies are classified as "blistering", "pitting", and "orientated ridges". Preferential sputtering of the W by the energetic He+ appears to be responsible for pitting and orientated ridges which developed at high fluences (1019 He+/cm2) in the MITE-E. While the orientated ridges were the dominant morphology on the W surface above 700 °C, the pitting was prevalent below 700 °C. The blister morphology was observed at all of the examined temperatures at fluences ≥5x1017 He+/cm2 but disappeared above fluences of 1019 He+/cm 2. The "coral-like" surface morphology on W inherent to He + implantation experiments in HOMER and HELIOS developed from a combination of sources: multiangular ion incidence, ion energy spread (softening), and electron field emission from nano-scale surface features induced by He + implantation. The HOMER and HELIOS devices were found to be better suited for simulation of magnetic fusion environments with off-normal particle incidences, and the MITE-E was found to be more suited for simulating the normal particle incidence of inertial fusion environments.

Controlled removal of ceramic surfaces with combination of ions implantation and ultrasonic energy

DOEpatents

Boatner, Lynn A.; Rankin, Janet; Thevenard, Paul; Romana, Laurence J.

1995-01-01

A method for tailoring or patterning the surface of ceramic articles is provided by implanting ions to predetermined depth into the ceramic material at a selected surface location with the ions being implanted at a fluence and energy adequate to damage the lattice structure of the ceramic material for bi-axially straining near-surface regions of the ceramic material to the predetermined depth. The resulting metastable near-surface regions of the ceramic material are then contacted with energy pulses from collapsing, ultrasonically-generated cavitation bubbles in a liquid medium for removing to a selected depth the ion-damaged near-surface regions containing the bi-axially strained lattice structure from the ceramic body. Additional patterning of the selected surface location on the ceramic body is provided by implanting a high fluence of high-energy, relatively-light ions at selected surface sites for relaxing the bi-axial strain in the near-surface regions defined by these sites and thereby preventing the removal of such ion-implanted sites by the energy pulses from the collapsing ultrasonic cavitation bubbles.

STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF PET POLYMER FILMS MODIFIED BY LOW ENERGY Ar+ ION BEAMS

NASA Astrophysics Data System (ADS)

Fawzy, Y. H. A.; Abdel-Hamid, H. M.; El-Okr, M. M.; Atta, A.

Polyethylene terephthalate (PET) films with thickness 40μm are irradiated with 3keV argon ion beams with different fluence ranging from 0.5×1018ions.cm-2 to 2×1018ions.cm-2 using locally designed broad ion source. The changes in the PET structure are characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) and scanning electron microscope (SEM) techniques. The XRD patterns show that the peak intensity decreases with irradiation and the particle size decreases from 65.75 Å for the un-irradiated to 52.80 Å after irradiation. The FTIR indicates partial decrease and reduction in the intensity of the bands due to the degradation of the polymer after ion irradiation. The optical energy band gap decreases from 3.14eV to 3.05eV and the number of carbon cluster increases from 119 to 126 after ion irradiation. The results show a slight increase in the electrical conductivities and the dielectric constant (ɛ). The results indicate the effectiveness of using PET films as capacitors and resistors in industrial applications.

Microstructural evolution of ion-irradiated sol–gel-derived thin films

DOE PAGES

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.; ...

2017-07-17

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

Photoinduced currents in pristine and ion irradiated kapton-H polyimide

NASA Astrophysics Data System (ADS)

Sharma, Anu; Sridharbabu, Y.; Quamara, J. K.

2014-10-01

The photoinduced currents in pristine and ion irradiated kapton-H polyimide have been investigated for different applied electric fields at 200°C. Particularly the effect of illumination intensity on the maximum current obtained as a result of photoinduced polarization has been studied. Samples were irradiated by using PELLETRON facility, IUAC, New Delhi. The photo-carrier charge generation depends directly on intensity of illumination. The samples irradiated at higher fluence show a decrease in the peak current with intensity of illumination. The secondary radiation induced crystallinity (SRIC) is responsible for the increase in maximum photoinduced currents generated with intensity of illumination.

Photoinduced currents in pristine and ion irradiated kapton-H polyimide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Anu, E-mail: sharmaanu81@gmail.com; Sridharbabu, Y., E-mail: sharmaanu81@gmail.com; Quamara, J. K., E-mail: sharmaanu81@gmail.com

2014-10-15

The photoinduced currents in pristine and ion irradiated kapton-H polyimide have been investigated for different applied electric fields at 200°C. Particularly the effect of illumination intensity on the maximum current obtained as a result of photoinduced polarization has been studied. Samples were irradiated by using PELLETRON facility, IUAC, New Delhi. The photo-carrier charge generation depends directly on intensity of illumination. The samples irradiated at higher fluence show a decrease in the peak current with intensity of illumination. The secondary radiation induced crystallinity (SRIC) is responsible for the increase in maximum photoinduced currents generated with intensity of illumination.

Correlation between the structure modification and conductivity of 3 MeV Si ion-irradiated polyimide

NASA Astrophysics Data System (ADS)

Sun, Youmei; Zhu, Zhiyong; Li, Changlin

2002-05-01

The surface modification of the polyimide (PI/Kapton) films was carried out by 3 MeV Si + implantation to fluences ranging from 1×10 12 to 1.25×10 15 ions/cm 2. Fourier transform infrared (FTIR), Raman and ultraviolet/visible (UV/Vis) spectroscopes were employed to investigate the chemical degradation of function groups in the irradiated layer. FTIR results show that the absorbance of typical function group decreases exponentially as a function of fluence. The damage cross-section of typical bonds of PI was evaluated from the FTIR spectra. Raman analysis shows the absorbed dose for destruction of all function groups is above 218 MGy. The red shifting of the absorption edge from UV to visible reveals the band gap closing which results from increase of the cluster size. The production efficiency of the chromophores was discussed according to UV/Vis analysis. Irradiation dramatically enhances the electrical conductivity and the sheet resistivity in our experiment descends nearly 10 orders of magnitude compared with its intrinsic value.

Anomalous Kinetics of Diffusion-Controlled Defect Annealing in Irradiated Ionic Solids.

PubMed

Kotomin, Eugene; Kuzovkov, Vladimir; Popov, Anatoli I; Maier, Joachim; Vila, Rafael

2018-01-11

The annealing kinetics of the primary electronic F-type color centers (oxygen vacancies with trapped one or two electrons) is analyzed for three ionic materials (Al 2 O 3 , MgO, and MgF 2 ) exposed to intensive irradiation by electrons, neutrons, and heavy swift ions. Phenomenological theory of diffusion-controlled recombination of the F-type centers with much more mobile interstitial ions (complementary hole centers) allows us to extract from experimental data the migration energy of interstitials and pre-exponential factor of diffusion. The obtained migration energies are compared with available first-principles calculations. It is demonstrated that with the increase of radiation fluence both the migration energy and pre-exponent are decreasing in all three materials, irrespective of the type of irradiation. Their correlation satisfies the Meyer-Neldel rule observed earlier in glasses, liquids, and disordered materials.The origin of this effect is discussed. This study demonstrates that in the quantitative analysis of the radiation damage of real materials the dependence of the defect migration parameters on the radiation fluence plays an important role and cannot be neglected.

Atom probe tomography of the evolution of the nanostructure of oxide dispersion strengthened steels under ion irradiation

NASA Astrophysics Data System (ADS)

Orlov, N. N.; Rogozhkin, S. V.; Bogachev, A. A.; Korchuganova, O. A.; Nikitin, A. A.; Zaluzhnyi, A. G.; Kozodaev, M. A.; Kulevoy, T. V.; Kuibeda, R. P.; Fedin, P. A.; Chalykh, B. B.; Lindau, R.; Hoffmann, Ya.; Möslang, A.; Vladimirov, P.

2017-09-01

The atom probe tomography of the nanostructure evolution in ODS1 Eurofer, ODS 13.5Cr, and ODS 13.5Cr-0.3Ti steels under heavy ion irradiation at 300 and 573 K is performed. The samples were irradiated by 5.6 MeV Fe2+ ions and 4.8 MeV Ti2+ ions to a fluence of 1015 cm-2. It is shown that the number of nanoclusters increases by a factor of 2-3 after irradiation. The chemical composition of the clusters in the steels changes after irradiation at 300 K, whereas the chemical composition of the clusters in the 13.5Cr-0.3Ti ODS steel remains the same after irradiation at 573 K.

Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO•7Al2O3

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Kamioka, Hayato; Hirano, Masahiro; Kamiya, Toshio; Sushko, Peter V.; Shluger, Alexander L.; Matsunami, Noriaki; Hosono, Hideo

2006-05-01

Implantation of Au+ ions into a single crystalline 12CaO•7Al2O3 (C12A7) was performed at high temperatures with fluences from 1×1014 to 3×1016cm-2 . This material is composed of positively charged sub-nanometer-sized cages compensated by extra-framework negatively charged species. The depth profile of concentrations of Au species was analyzed using Rutherford backscattering spectrometry. The measured optical spectra and ab initio embedded cluster calculations show that the implanted Au species are stabilized in the form of negative Au- ions below the fluences of ˜1×1016cm-2 (Au volume concentration of ˜2×1021cm-3 ). These ions are trapped in the cages and exhibit photoluminescence (PL) bands peaking at 3.05 and 2.34eV at temperatures below 150K . At fluences exceeding ˜3×1016cm-2 , the implanted Au atoms form nano-sized clusters. This is manifested in quenching of the PL bands and creation of an optical absorption band at 2.43eV due to the surface plasmon of free carriers in the cluster. The PL bands are attributed to the charge transfer transitions (Au0+e-→Au-) due to recombination of photo-excited electrons (e-) , transiently transferred by ultraviolet excitation into a nearby cages, with Au0 atoms.

Probabilistic Model Development

NASA Technical Reports Server (NTRS)

Adam, James H., Jr.

2010-01-01

Objective: Develop a Probabilistic Model for the Solar Energetic Particle Environment. Develop a tool to provide a reference solar particle radiation environment that: 1) Will not be exceeded at a user-specified confidence level; 2) Will provide reference environments for: a) Peak flux; b) Event-integrated fluence; and c) Mission-integrated fluence. The reference environments will consist of: a) Elemental energy spectra; b) For protons, helium and heavier ions.

Characteristics of Ions Emission from Ultrashort Laser Produced Plasma

PubMed Central

Elsied, Ahmed M.; Termini, Nicholas C.; Diwakar, Prasoon K.; Hassanein, Ahmed

2016-01-01

The dynamic characteristics of the ions emitted from ultrashort laser interaction with materials were studied. A series of successive experiments were conducted for six different elements (C, Al, Cu, Mo, Gd, and W) using 40 fs, 800 nm Ti: Sapphire laser. Time-of-flight (TOF) ion profile was analyzed and charge emission dependencies were investigated. The effects of incident laser interaction with each element were studied over a wide range of laser fluences (0.8 J/cm2 to 24 J/cm2) corresponding to laser intensities (2.0 × 1013 W/cm2 to 6.0 × 1014 W/cm2). The dependencies of the angular resolved ion flux and energy were also investigated. The TOF ion profile exhibits two peaks corresponding to a fast and a slow ion regime. The slow ions emission was the result of thermal vaporization while fast ions emission was due to time dependent ambipolar electric field. A theoretical model is proposed to predict the total ion flux emitted during femtosecond laser interaction that depends on laser parameters, material properties, and plume hydrodynamics. Incident laser fluence directly impacts average charge state and in turn affects the ion flux. Slow ions velocity exhibited different behavior from fast ions velocity. The fast ions energy and flux were found to be more collimated. PMID:27905553

Carbon ions irradiation on nano- and microcrystalline CaSO4 : Dy

NASA Astrophysics Data System (ADS)

Salah, Numan

2008-08-01

Nanoparticles of CaSO4 : Dy phosphor with a particle size of around 30 nm have been prepared by the chemical co-precipitation technique. Pellet samples of the nanomaterials were irradiated by a 75 MeV C6+ ion beam at the fluence range 1 × 109-1 × 1013 ions cm-2. Thermoluminescence (TL) glow curves of the irradiated samples were recorded and studied. The microcrystalline form of this sample is also included in the study with the aim of reporting a comparative measurement. The TL analysis shows that the glow curve of the nanomaterial has two peaks at around 166 and 210 °C. These peaks are similar to those induced in the microcrystalline sample with a slight difference in their TL response. The second peak is more prominent in the case of the microcrystalline sample at low fluences, while the first one dominates in the nanostructured sample mainly at higher fluences. The TRIM code based on Monte Carlo simulation was also used for calculating some ion beam parameters. Dosimetric properties of the carbon ion beam irradiated materials show that the nanostructure material has excellent features such as a simple glow curve structure and a linear TL response over a wider range than the corresponding microcrystalline sample. These results show that the nanostructure form of CaSO4 : Dy might be useful for detecting the high doses of carbon ions used in radiotherapy. Thermal analysis of the prepared nano- and microcrystalline materials was also done in the range 50-500 °C using thermogravimetry analysis and differential thermal analysis. No phase transitions within this range of heating for both the materials are observed.

Growth mechanisms of multiscale, mound-like surface structures on titanium by femtosecond laser processing

NASA Astrophysics Data System (ADS)

Peng, Edwin; Bell, Ryan; Zuhlke, Craig A.; Wang, Meiyu; Alexander, Dennis R.; Gogos, George; Shield, Jeffrey E.

2017-10-01

Femtosecond laser surface processing (FLSP) can be used to functionalize many surfaces, imparting specialized properties such as increased broadband optical absorption or super-hydrophobicity/-hydrophilicity. In this study, the subsurface microstructure of a series of mound-like FLSP structures formed on commercially pure titanium using five combinations of laser fluence and cumulative pulse counts was studied. Using a dual beam Scanning Electron Microscope with a Focused Ion Beam, the subsurface microstructure for each FLSP structure type was revealed by cross-sectioning. The microstructure of the mounds formed using the lowest fluence value consists of the original Ti grains. This is evidence that preferential laser ablation is the primary formation mechanism. However, the underlying microstructure of mounds produced using higher fluence values was composed of a distinct smaller-grained α-Ti region adjacent to the original larger Ti grains remaining deeper beneath the surface. This layer was attributed to resolidification of molten Ti from the hydrodynamic Marangoni effect driven fluid flow of molten Ti, which is the result of the femtosecond pulse interaction with the material.

Controlling Fluences of Reactive Species Produced by Multipulse DBDs onto Wet Tissue: Frequency and Liquid Thickness

NASA Astrophysics Data System (ADS)

Tian, Wei; Kushner, Mark J.

2015-09-01

Tissue covered by a thin liquid layer treated by atmospheric pressure plasmas for biomedical applications ultimately requires a reproducible protocol for human healthcare. The outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) depend on the plasma dose which determines the integral fluences of radicals and ions onto the tissue. These fluences are controlled in part by frequency and liquid thickness. In this paper, we report on results from a computational investigation of multipulse DBDs interacting with wet tissue. The DBDs were simulated for 100 stationary or random streamers at different repetition rates and liquid thicknesses followed by 10 s to 2 min of afterglow. At 100 Hz, NOaq and OHaq are mixed by randomly striking streamers, although they have different rates of solvation. NOaq is nearly completely consumed by reactions with OHaq at the liquid surface. Only H2O2aq, produced through OHaq mutual reactions, survives to reach the tissue. After 100 pulses, the liquid becomes ozone-rich, in which the nitrous ion, NO2-aq, is converted to the nitric ion, NO3-aq. Reducing the pulse frequency to 10 Hz results in significant fluence of NOaq to the tissue as NOaq can escape during the interpulse period from the liquid surface where OHaq is formed. For the same reason, NO2-aq can also reach deeper into the liquid at lower frequency. Frequency and thickness of the liquid are methods to control the plasma produced aqueous species to the underlying tissue. Work supported by DOE (DE-SC0001319) and NSF (CHE-1124724).

Molecular dynamics study of radiation damage and microstructure evolution of zigzag single-walled carbon nanotubes under carbon ion incidence

NASA Astrophysics Data System (ADS)

Li, Huan; Tang, Xiaobin; Chen, Feida; Huang, Hai; Liu, Jian; Chen, Da

2016-07-01

The radiation damage and microstructure evolution of different zigzag single-walled carbon nanotubes (SWCNTs) were investigated under incident carbon ion by molecular dynamics (MD) simulations. The radiation damage of SWCNTs under incident carbon ion with energy ranging from 25 eV to 1 keV at 300 K showed many differences at different incident sites, and the defect production increased to the maximum value with the increase in incident ion energy, and slightly decreased but stayed fairly stable within the majority of the energy range. The maximum damage of SWCNTs appeared when the incident ion energy reached 200 eV and the level of damage was directly proportional to incident ion fluence. The radiation damage was also studied at 100 K and 700 K and the defect production decreased distinctly with rising temperature because radiation-induced defects would anneal and recombine by saturating dangling bonds and reconstructing carbon network at the higher temperature. Furthermore, the stability of a large-diameter tube surpassed that of a thin one under the same radiation environments.

Irradiation effects in monazite-(Ce) and zircon: Raman and photoluminescence study of Au-irradiated FIB foils

NASA Astrophysics Data System (ADS)

Nasdala, Lutz; Akhmadaliev, Shavkat; Artac, Andreas; Chanmuang N., Chutimun; Habler, Gerlinde; Lenz, Christoph

2018-05-01

Lamellae of 1.5 µm thickness, prepared from well-crystallised monazite-(Ce) and zircon samples using the focused-ion-beam technique, were subjected to triple irradiation with 1 MeV Au+ ions (15.6% of the respective total fluence), 4 MeV Au2+ ions (21.9%) and 10 MeV Au3+ ions (62.5%). Total irradiation fluences were varied in the range 4.5 × 1012 - 1.2 × 1014 ions/cm2. The highest fluence resulted in amorphisation of both minerals; all other irradiations (i.e. up to 4.5 × 1013 ions/cm2) resulted in moderate to severe damage. Lamellae were subjected to Raman and laser-induced photoluminescence analysis, in order to provide a means of quantifying irradiation effects using these two micro-spectroscopy techniques. Based on extensive Monte Carlo calculations and subsequent defect-density estimates, irradiation-induced spectroscopic changes are compared with those of naturally self-irradiated samples. The finding that ion irradiation of monazite-(Ce) may cause severe damage or even amorphisation, is in apparent contrast to the general observation that naturally self-irradiated monazite-(Ce) does not become metamict (i.e. irradiation-amorphised), in spite of high self-irradiation doses. This is predominantly assigned to the continuous low-temperature damage annealing undergone by this mineral; other possible causes are discussed. According to cautious estimates, monazite-(Ce) samples of Mesoproterozoic to Cretaceous ages have stored only about 1% of the total damage experienced. In contrast, damage in ion-irradiated and naturally self-irradiated zircon is on the same order; reasons for the observed slight differences are discussed. We may assess that in zircon, alpha decays create significantly less than 103 Frenkel-type defect pairs per event, which is much lower than previous estimates. Amorphisation occurs at defect densities of about 0.10 dpa (displacements per lattice atom).

Theoretical studies of defect formation and target heating by intense pulsed ion beams

NASA Astrophysics Data System (ADS)

Barnard, J. J.; Schenkel, T.; Persaud, A.; Seidl, P. A.; Friedman, A.; Grote, D. P.; Davidson, R. C.; Gilson, E. P.; Kaganovich, I.

2015-11-01

We present results of three studies related to experiments on NDCX-II, the Neutralized Drift Compression Experiment, a short-pulse (~ 1ns), high-current (~ 70A) linear accelerator for 1.2 MeV ions at LBNL. These include: (a) Coupled transverse and longitudinal envelope calculations of the final non-neutral ion beam transport, followed by neutralized drift and final focus, for a number of focus and drift lengths and with a series of ion species (Z =1-19). Predicted target fluences were obtained and target temperatures in the 1 eV range estimated. (b) HYDRA simulations of the target response for Li and He ions and for Al and Au targets at various ion fluences (up to 1012 ions/pulse/mm2) and pulse durations, benchmarking temperature estimates from the envelope calculations. (c) Crystal-Trim simulations of ion channeling through single-crystal lattices, with comparisons to ion transmission data as a function of orientation angle of the crystal foil and for different ion intensities and ion species. This work was performed under the auspices of the U.S. DOE under contracts DE-AC52-07NA27344 (LLNL), DE-AC02-05CH11231 (LBNL) and DE-AC02-76CH0307 (PPPL) and was supported by the US DOE Office of Science, Fusion Energy Sciences. LLNL-ABS-67521.

Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velişa, G.; Wendler, E.; Zhao, S.

A combined experimental and computational evaluation of damage accumulation in ion-irradiated Ni, NiFe, and NiFeCoCr is presented. Furthermore, a suppressed damage accumulation, at early stages (low-fluence irradiation), is revealed in NiFeCoCr, with a linear dependence as a function of ion fluence, in sharp contrast with Ni and NiFe. This effect, observed at 16 K, is attributed to the complex energy landscape in these alloys that limits defect mobility and therefore enhances defect interaction and recombination. Our results, together with previous room-temperature and high-temperature investigations, suggest "self-healing" as an intrinsic property of complex alloys that is not a thermally activated process.

Delayed damage accumulation by athermal suppression of defect production in concentrated solid solution alloys

DOE PAGES

Velişa, G.; Wendler, E.; Zhao, S.; ...

2017-12-17

A combined experimental and computational evaluation of damage accumulation in ion-irradiated Ni, NiFe, and NiFeCoCr is presented. Furthermore, a suppressed damage accumulation, at early stages (low-fluence irradiation), is revealed in NiFeCoCr, with a linear dependence as a function of ion fluence, in sharp contrast with Ni and NiFe. This effect, observed at 16 K, is attributed to the complex energy landscape in these alloys that limits defect mobility and therefore enhances defect interaction and recombination. Our results, together with previous room-temperature and high-temperature investigations, suggest "self-healing" as an intrinsic property of complex alloys that is not a thermally activated process.

Calibration of the borated ion chamber at NIST reactor thermal column.

PubMed

Wang, Z; Hertel, N E; Lennox, A

2007-01-01

In boron neutron capture therapy and boron neutron capture enhanced fast neutron therapy, the absorbed dose of tissue due to the boron neutron capture reaction is difficult to measure directly. This dose can be computed from the measured thermal neutron fluence rate and the (10)B concentration at the site of interest. A borated tissue-equivalent (TE) ion chamber can be used to directly measure the boron dose in a phantom under irradiation by a neutron beam. Fermilab has two Exradin 0.5 cm(3) Spokas thimble TE ion chambers, one loaded with boron, available for such measurements. At the Fermilab Neutron Therapy Facility, these ion chambers are generally used with air as the filling gas. Since alpha particles and lithium ions from the (10)B(n,alpha)(7)Li reactions have very short ranges in air, the Bragg-Gray principle may not be satisfied for the borated TE ion chamber. A calibration method is described in this paper for the determination of boron capture dose using paired ion chambers. The two TE ion chambers were calibrated in the thermal column of the National Institute of Standards and Technology (NIST) research reactor. The borated TE ion chamber is loaded with 1,000 ppm of natural boron (184 ppm of (10)B). The NIST thermal column has a cadmium ratio of greater than 400 as determined by gold activation. The thermal neutron fluence rate during the calibration was determined using a NIST fission chamber to an accuracy of 5.1%. The chambers were calibrated at two different thermal neutron fluence rates: 5.11 x 10(6) and 4.46 x 10(7)n cm(-2) s(-1). The non-borated ion chamber reading was used to subtract collected charge not due to boron neutron capture reactions. An optically thick lithium slab was used to attenuate the thermal neutrons from the neutron beam port so the responses of the chambers could be corrected for fast neutrons and gamma rays in the beam. The calibration factor of the borated ion chamber was determined to be 1.83 x 10(9) +/- 5.5% (+/- 1sigma) n cm(-2) per nC at standard temperature and pressure condition.

Ion-irradiation resistance of the orthorhombic Ln2TiO5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) series

NASA Astrophysics Data System (ADS)

Aughterson, Robert D.; Lumpkin, Gregory R.; Ionescu, Mihail; Reyes, Massey de los; Gault, Baptiste; Whittle, Karl R.; Smith, Katherine L.; Cairney, Julie M.

2015-12-01

The response of Ln2TiO5 (where Ln is a lanthanide) compounds exposed to high-energy ions was used to test their suitability for nuclear-based applications, under two different but complementary conditions. Eight samples with nominal stoichiometry Ln2TiO5 (Ln = La, Pr, Nd, Sm, Eu, Gd, Tb and Dy), of orthorhombic (Pnma) structure were irradiated, at various temperatures, with 1 MeV Kr2+ ions in-situ within a transmission electron microscope. In each case, the fluence was increased until a phase transition from crystalline to amorphous was observed, termed critical dose Dc. At certain elevated temperatures, the crystallinity was maintained irrespective of fluence. The critical temperature for maintaining crystallinity, Tc, varied non-uniformly across the series. The Tc was consistently high for La, Pr, Nd and Sm2TiO5 before sequential improvement from Eu to Dy2TiO5 with Tc's dropping from 974 K to 712 K. In addition, bulk Dy2TiO5 was irradiated with 12 MeV Au+ ions at 300 K, 723 K and 823 K and monitored via grazing-incidence X-ray diffraction (GIXRD). At 300 K, only amorphisation is observed, with no transition to other structures, whilst at higher temperatures, specimens retained their original structure. The improved radiation tolerance of compounds containing smaller lanthanides has previously been attributed to their ability to form radiation-induced phase transitions. No such transitions were observed here.

Damage creation in porous silicon irradiated by swift heavy ions

NASA Astrophysics Data System (ADS)

Canut, B.; Massoud, M.; Newby, P.; Lysenko, V.; Frechette, L.; Bluet, J. M.; Monnet, I.

2014-05-01

Mesoporous silicon (PS) samples were processed by anodising p+ Si wafers in (1:1) HF-ethanol solution. Different current densities were used to obtain three different porosities (41%, 56% and 75%). In all cases the morphology of the PS layer is columnar with a mean crystallite size between 12 nm (75% porosity) and 19 nm (41% porosity). These targets were irradiated at the GANIL accelerator, using different projectiles (130Xe ions of 91 MeV and 29 MeV, 238U ions of 110 MeV and 850 MeV) in order to vary the incident electronic stopping power Se. The fluences ranged between 1011 and 7 × 1013 cm-2. Raman spectroscopy and cross sectional SEM observations evidenced damage creation in the irradiated nanocrystallites, without any degradation of the PS layer morphology at fluences below 3 × 1012 cm-2. For higher doses, the columnar morphology transforms into a spongy-like structure. The damage cross sections, extracted from Raman results, increase with the electronic stopping power and with the sample porosity. At the highest Se (>10 keV nm-1) and the highest porosity (75%), the track diameter coincides with the crystallite diameter, indicating that a single projectile impact induces the crystallite amorphization along the major part of the ion path. These results were interpreted in the framework of the thermal spike model, taking into account the low thermal conductivity of the PS samples in comparison with that of bulk silicon.

In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs Schottky diode at low temperature

NASA Astrophysics Data System (ADS)

Singh, R.; Arora, S. K.; Singh, J. P.; Kanjilal, D.

A Au/n-GaAs(100) Schottky diode was irradiated at 80 K by a 180 MeV Ag-107(14+) ion beam. In situ current-voltage (I--V) characterization of the diode was performed at various irradiation fluences ranging from 1x10(10) to 1x10(13) ions cm(-2) . The semiconductor was heavily doped (carrier concentration=1x10(18) cm(-3)), hence thermionic field emission was assumed to be the dominant current transport mechanism in the diode. Systematic variations in various parameters of the Schottky diode like characteristic energy E-0 , ideality factor n , reverse saturation current I-S , flatband barrier height Phi(bf) and reverse leakage current I-R have been observed with respect to the irradiation fluence. The nuclear and electronic energy losses of the swift heavy ion affect the interface state density at the metal-semiconductor interface resulting in observed variations in Schottky diode parameters.

Fluence inhomogeneities due to a ripple filter induced Moiré effect.

PubMed

Ringbæk, Toke Printz; Brons, Stephan; Naumann, Jakob; Ackermann, Benjamin; Horn, Julian; Latzel, Harald; Scheloske, Stefan; Galonska, Michael; Bassler, Niels; Zink, Klemens; Weber, Uli

2015-02-07

At particle therapy facilities with pencil beam scanning, the implementation of a ripple filter (RiFi) broadens the Bragg peak, so fewer energy steps from the accelerator are required for a homogeneous dose coverage of the planning target volume (PTV). However, sharply focusing the scanned pencil beams at the RiFi plane by ion optical settings can lead to a Moiré effect, causing fluence inhomogeneities at the isocenter. This has been experimentally proven at the Heidelberg Ionenstrahl-Therapiezentrum (HIT), Universitätsklinikum Heidelberg, Germany. 150 MeV u(-1) carbon-12 ions are used for irradiation with a 3 mm thick RiFi. The beam is focused in front of and as close to the RiFi plane as possible. The pencil beam width is estimated to be 0.78 mm at a 93 mm distance from the RiFi. Radiographic films are used to obtain the fluence profile 30 mm in front of the isocenter, 930 mm from the RiFi. The Monte Carlo (MC) code SHIELD-HIT12A is used to determine the RiFi-induced inhomogeneities in the fluence distribution at the isocenter for a similar setup, pencil beam widths at the RiFi plane ranging from σχ(RiFi to 1.2 mm and for scanning step sizes ranging from 1.5 to 3.7 mm. The beam application and monitoring system (BAMS) used at HIT is modelled and simulated. When the width of the pencil beams at the RiFi plane is much smaller than the scanning step size, the resulting inhomogeneous fluence distribution at the RiFi plane interfers with the inhomogeneous RiFi mass distribution and fluence inhomogeneity can be observed at the isocenter as large as an 8% deviation from the mean fluence. The inverse of the fluence ripple period at the isocenter is found to be the difference between the inverse of the RiFi period and the inverse of the scanning step size. We have been able to use MC simulations to reproduce the spacing of the ripple stripes seen in films irradiated at HIT. Our findings clearly indicate that pencil beams sharply focused near the RiFi plane result in fluence inhomogeneity at the isocenter. In the normal clinical application, such a setting should generally be avoided.

Study of the effects of focused high-energy boron ion implantation in diamond

NASA Astrophysics Data System (ADS)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Study of ion-irradiated tungsten in deuterium plasma

NASA Astrophysics Data System (ADS)

Khripunov, B. I.; Gureev, V. M.; Koidan, V. S.; Kornienko, S. N.; Latushkin, S. T.; Petrov, V. B.; Ryazanov, A. I.; Semenov, E. V.; Stolyarova, V. G.; Danelyan, L. S.; Kulikauskas, V. S.; Zatekin, V. V.; Unezhev, V. N.

2013-07-01

Experimental study aimed at investigation of neutron induced damage influence on fusion reactor plasma facing materials is reported. Displacement damage was produced in tungsten by high-energy helium and carbon ions at 3-10 MeV. The reached level of displacement damage ranged from several dpa to 600 dpa. The properties of the irradiated tungsten were studied in steady-state deuterium plasma on the LENTA linear divertor simulator. Plasma exposures were made at 250 eV of ion energy to fluence 1021-1022 ion/сm2. Erosion dynamics of the damaged layer and deuterium retention were observed. Surface microstructure modifications and important damage of the 5 μm layer shown. Deuterium retention in helium-damaged tungsten (ERD) showed its complex behavior (increase or decrease) depending on implanted helium quantity and the structure of the surface layer.

Retention of neon in graphite after ion beam implantation or exposures to the scrape-off layer plasma in the TEXTOR tokamak

NASA Astrophysics Data System (ADS)

Kim, Y. M.; Philipps, V.; Rubel, M.; Vietzke, E.; Pospieszczyk, A.; Unterberg, B.; Jaspers, R.

2002-01-01

The interaction of neon ions with graphite was investigated for targets either irradiated with ion beams (2-10 keV range) or exposed to the scrape-off layer plasma in the TEXTOR tokamak during discharges with neon edge cooling. The emphasis was on the influence of the target temperature (300-1200 K) and the implantation dose on the neon retention and reemission. The influence of deuterium impact on the retention of neon implanted into graphite has also been addressed. In ion beam experiments saturation is observed above a certain ion dose with a saturation level, which decreases with increasing target temperature. The temperature dependence of the thermal desorption corresponds to an apparent binding energy of about 2.06 eV. The retention of neon (CNe/CC) decreases with increasing ion energy with values from 0.55 to 0.15 following irradiation with 2 and 10 keV ions, respectively. The reemission yield during the irradiation increases with target temperature and above 1200 K all impinging ions are reemitted instantaneously. The retention densities measured using the sniffer probe at the TEXTOR tokamak are less than 1% of the total neon fluence and are over one order of magnitude smaller than those observed in ion beam experiments. The results are discussed in terms of different process decisive for ion deposition and release under the two experimental conditions.

Effect of gas filling pressure and operation energy on ion and neutron emission in a medium energy plasma focus device

NASA Astrophysics Data System (ADS)

Niranjan, Ram; Rout, R. K.; Srivastava, Rohit; Kaushik, T. C.

2018-03-01

The effects of gas filling pressure and operation energy on deuterium ions and neutrons have been studied in a medium energy plasma focus device, MEPF-12. The deuterium gas filling pressure was varied from 1 to 10 mbar at an operation energy of 9.7 kJ. Also, the operation energy was varied from 3.9 to 9.7 kJ at a deuterium gas filling pressure of 4 mbar. Time resolved emission of deuterium ions was measured using a Faraday cup. Simultaneously, time integrated and time resolved emissions of neutrons were measured using a silver activation detector and plastic scintillator detector, respectively. Various characteristics (fluence, peak density, and most probable energy) of deuterium ions were estimated using the Faraday cup signal. The fluence was found to be nearly independent of the gas filling pressure and operation energy, but the peak density and most probable energy of deuterium ions were found to be varying. The neutron yield was observed to be varying with the gas filling pressure and operation energy. The effect of ions on neutrons emission was observed at each operation condition.

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

Effect of He implantation on the microstructure of zircaloy-4 studied using in situ TEM

NASA Astrophysics Data System (ADS)

Tunes, M. A.; Harrison, R. W.; Greaves, G.; Hinks, J. A.; Donnelly, S. E.

2017-09-01

Zirconium alloys are of great importance to the nuclear industry as they have been widely used as cladding materials in light-water reactors since the 1960s. This work examines the behaviour of these alloys under He ion implantation for the purposes of developing understanding of the fundamental processes behind their response to irradiation. Characterization of zircaloy-4 samples using TEM with in situ 6 keV He irradiation up to a fluence of 2.7 ×1017ions ·cm-2 in the temperature range of 298 to 1148 K has been performed. Ordered arrays of He bubbles were observed at 473 and 1148 K at a fluence of 1.7 ×1017ions ·cm-2 in αZr, the hexagonal compact (HCP) and in βZr, the body centred cubic (BCC) phases, respectively. In addition, the dissolution behaviour of cubic Zr hydrides under He irradiation has been investigated.

Raman study of apatite amorphised with swift heavy ions under various irradiation conditions

NASA Astrophysics Data System (ADS)

Weikusat, Christian; Glasmacher, Ulrich A.; Schuster, Beatrice; Trautmann, Christina; Miletich, Ronald; Neumann, Reinhard

2011-04-01

Crystallographically oriented Durango fluorapatites were exposed to swift heavy ions (Xe, Ta, Au, U) at different irradiation conditions. Beam-induced sample modifications were investigated with respect to the effect of fluence (109-1013 ions/cm2), electronic energy loss (18-27 keV/nm), and pressure (3.6-11.5 GPa) applied during irradiation. In situ high-pressure irradiation was performed in diamond anvil cells. Confocal Raman spectroscopy was used to trace the occurring changes in the crystal lattice. Fragmentation of the crystal specimen depends on the orientation and sample thickness and was found to scale with energy loss and fluence. The radiation damage for irradiation along the c-axis was found to be larger than for the < hk0> direction, independent of the confining pressure. Observations on samples irradiated at high pressures indicate a stabilising effect, leading to reduced amorphisation in comparison to the samples irradiated without pressure.

Synthesis of Fe16N2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation

PubMed Central

Jiang, Yanfeng; Mehedi, Md Al; Fu, Engang; Wang, Yongqiang; Allard, Lawrence F.; Wang, Jian-Ping

2016-01-01

Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe16N2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku > 1.0 × 107 erg/cc), and large saturation magnetization (4πMs > 2.4 T). However, there is no report on the formation of Fe16N2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize free-standing Fe16N2 foils with a coercivity of up to 1910 Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25–30 nm is constructed on the FeN foil sample with the implantation fluence of 5 × 1017/cm2. PMID:27145983

Synthesis of Fe16N2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation.

PubMed

Jiang, Yanfeng; Mehedi, Md Al; Fu, Engang; Wang, Yongqiang; Allard, Lawrence F; Wang, Jian-Ping

2016-05-05

Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe16N2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku > 1.0 × 10(7) erg/cc), and large saturation magnetization (4πMs > 2.4 T). However, there is no report on the formation of Fe16N2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize free-standing Fe16N2 foils with a coercivity of up to 1910 Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25-30 nm is constructed on the FeN foil sample with the implantation fluence of 5 × 10(17)/cm(2).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

Role of atomic-level defects and electronic energy loss on amorphization in LiNbO 3 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sellami, N.; Crespillo, M. L.; Xue, H.

Understanding complex non-equilibrium defect processes, where multiple irradiation mechanisms may take place simultaneously, is a long standing subject in material science. The separate and combined effects of elastic and inelastic energy loss are a very complicated and challenging topic. In this work, LiNbO 3 has been irradiated with 0.9 MeV Si + and 8 MeV O 3+, which are representative of regimes where nuclear (S n) and electronic (S e) energy loss are dominant, respectively. The evolution of damage has been investigated by Rutherford backscattering spectrometry (RBS) in channeling configuration. Pristine samples were irradiated with 0.9 MeV Si + ionsmore » to create different pre-existing damage states. Below the threshold (S e,th = 5–6 keV nm –1) for amorphous track formation in this material, irradiation of the pristine samples with a highly ionizing beam of 8 MeV O 3+ ions, with nearly constant S e of about 3 keV nm –1, induces a crystalline to amorphous phase transition at high ion fluences. In the pre-damaged samples, the electronic energy loss from the 8 MeV O 3+ ions interacts synergistically with the pre-existing damage, resulting in a rapid, non-linear increase in damage production. There is a significant reduction in the incubation fluence for rapid amorphization with the increasing amount of pre-existing damage. Here, these results highlight the important role of atomic-level defects on increasing the sensitivity of some oxides to amorphization induced by electronic energy loss. Controlling the nature and amount of pre-damage may provide a new approach to tuning optical properties for photonic device applications.« less

Role of atomic-level defects and electronic energy loss on amorphization in LiNbO 3 single crystals

DOE PAGES

Sellami, N.; Crespillo, M. L.; Xue, H.; ...

2017-06-20

Understanding complex non-equilibrium defect processes, where multiple irradiation mechanisms may take place simultaneously, is a long standing subject in material science. The separate and combined effects of elastic and inelastic energy loss are a very complicated and challenging topic. In this work, LiNbO 3 has been irradiated with 0.9 MeV Si + and 8 MeV O 3+, which are representative of regimes where nuclear (S n) and electronic (S e) energy loss are dominant, respectively. The evolution of damage has been investigated by Rutherford backscattering spectrometry (RBS) in channeling configuration. Pristine samples were irradiated with 0.9 MeV Si + ionsmore » to create different pre-existing damage states. Below the threshold (S e,th = 5–6 keV nm –1) for amorphous track formation in this material, irradiation of the pristine samples with a highly ionizing beam of 8 MeV O 3+ ions, with nearly constant S e of about 3 keV nm –1, induces a crystalline to amorphous phase transition at high ion fluences. In the pre-damaged samples, the electronic energy loss from the 8 MeV O 3+ ions interacts synergistically with the pre-existing damage, resulting in a rapid, non-linear increase in damage production. There is a significant reduction in the incubation fluence for rapid amorphization with the increasing amount of pre-existing damage. Here, these results highlight the important role of atomic-level defects on increasing the sensitivity of some oxides to amorphization induced by electronic energy loss. Controlling the nature and amount of pre-damage may provide a new approach to tuning optical properties for photonic device applications.« less

Radiation Effects on DC-DC Converters

NASA Technical Reports Server (NTRS)

Zhang, De-Xin; AbdulMazid, M. D.; Attia, John O.; Kankam, Mark D. (Technical Monitor)

2001-01-01

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Comparison between calculation and measured data on secondary neutron energy spectra by heavy ion reactions from different thick targets.

PubMed

Iwase, H; Wiegel, B; Fehrenbacher, G; Schardt, D; Nakamura, T; Niita, K; Radon, T

2005-01-01

Measured neutron energy fluences from high-energy heavy ion reactions through targets several centimeters to several hundred centimeters thick were compared with calculations made using the recently developed general-purpose particle and heavy ion transport code system (PHITS). It was confirmed that the PHITS represented neutron production by heavy ion reactions and neutron transport in thick shielding with good overall accuracy.

An attempt to reproduce high burn-up structure by ion irradiation of SIMFUEL

NASA Astrophysics Data System (ADS)

Baranov, V. G.; Lunev, A. V.; Reutov, V. F.; Tenishev, A. V.; Isaenkova, M. G.; Khlunov, A. V.

2014-09-01

Experiments in IC-100 and U-400 cyclotrons were conducted with SIMFUEL pellets (11.47 wt.% of fission products simulators) to reproduce some aspects of the long-term irradiation conditions in epithermal reactors. Pellets were irradiated with Xe16+, Xe24+ and He+ at energies ranging from 20 keV (He+) to 320 keV (Xe16+) and 1-90 MeV (Xe24+). Some samples were subsequently annealed to obtain larger grain sizes and to study defects recovery. The major microstructural changes consisted in grain sub-division observed on SEM and AFM images and change in composition registered by EPMA (pellets irradiated with 1-90 MeV Xe24+ ions at fluence of 5 × 1015 cm-2). Lattice distortion and increase in dislocation density is also noted according to X-ray data. At low energies and high fluences formation of bubbles (20 keV He+ at 5.5 × 1017 cm-2) was observed. Grain sub-division exhibits full coverage of the grain body and preservation of former grain boundaries. The size of sub-grains depends on local dislocation density and changes from 200 nm to 400 nm along the irradiated surface. Beneath it the size ranges from 150 to 600 nm. Sub-grains are not observed in samples irradiated by low-energy ions even at high dislocation densities.

The composite structure of peak 5 in the glow curve of LiF:Mg,Ti (TLD-100): confirmation of peak 5a arising from a locally trapped electron-hole configuration.

PubMed

Horowitz, Y S; Oster, L; Satinger, D; Biderman, S; Einav, Y

2002-01-01

The hypothesis that glow peak 5a arises from localised e-h capture is confirmed by the following experimental observations: (i) The high conversion efficiency (CE) (CE5a-->4 = 3 +/- 0.5) of peak 5a to peak 4 (a hole-only trap) deduced from detailed Im-Tstop optical bleaching studies at 310 nm compared to the much lower CE of peak 5 (an electron-only trap) (CE5-->4 = 0.0026+/-0.012). (ii) The lack of an increase in the sensitivity of glow peak 5a following 2.6 MeV and 6.8 MeV He ion irradiation in 'sensitised' material compared to the factor two increase in the sensitivity of peak 5; (S/S0)5a = 0.86+/-0.12, compared to (S/S0)5 = 2.0+/-0.2. (iii) The late entry into saturation of the 2.6 MeV and 6.8 MeV He ion TL-fluence response curves for peak 5a compared to peak 5 in sensitised and normal material resulting in the following values for the track radial saturation parameter: (r50)5a = 100+/-20) Angstroms compared to (r50)5 = 380+/-30 Angstroms. (iv) The low value of 0.1 for the 'track-escape' parameter of peak 5a deduced from the Extended Track Interaction Model analysis of He ion TL fluence response compared to order of magnitude greater values for peaks 5 and 5b.

Phase stability in thermally-aged CASS CF8 under heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Meimei; Miller, Michael K.; Chen, Wei-Ying

2015-07-01

The stability of the microstructure of a cast austenitic stainless steel (CASS), before and after heavy ion irradiation, was investigated by atom probe tomography (APT). A CF8 ferrite–austenite duplex alloy was thermally aged at 400 °C for 10,000 h. After this treatment, APT revealed nanometer-sized G-phase precipitates and Fe-rich α and Cr-enriched α' phase separated regions in the ferrite. The thermally-aged CF8 specimen was irradiated with 1 MeV Kr ions to a fluence of 1.88 × 10 19 ions/m 2 at 400 °C. After irradiation, APT analysis revealed a strong spatial/dose dependence of the G-phase precipitates and the α–α' spinodalmore » decomposition in the ferrite. For the G-phase precipitates, the number density increased and the mean size decreased with increasing dose, and the particle size distribution changed considerably under irradiation. The inverse coarsening process can be described by recoil resolution. The amplitude of the α–α' spinodal decomposition in the ferrite was apparently reduced after heavy ion irradiation.« less

Controlling and patterning the effective magnetization in Y3Fe5O12 thin films using ion irradiation

NASA Astrophysics Data System (ADS)

Ruane, W. T.; White, S. P.; Brangham, J. T.; Meng, K. Y.; Pelekhov, D. V.; Yang, F. Y.; Hammel, P. C.

2018-05-01

We report an approach to controlling the effective magnetization (Meff), a combination of the saturation magnetization and uniaxial anisotropy, of the ferrimagnet Y3Fe5O12 (YIG) using different species of ions: He+ and Ga+. The effective magnetization can be tuned as a function of the fluence, with He + providing the largest effect. We quantified the change in effective magnetization through an angular dependence of the ferromagnetic resonance before and after irradiation. Increases in 4πMeff were observed to be as much as 400 G with only a 15% increase in Gilbert damping, α (from 8.2e-4 to 9.4e-4). This result was combined with a method for accurate ion pattering, a focused ion beam, providing a mechanism for shaping the magnetic environment with submicron precision. We observe resonance modes localized by ion patterning of micron-sized dots, whose resonances match well with micromagnetic simulations. This technique offers a flexible tool for precision nanoscale control and characterization of the magnetic properties of YIG.

Effect of argon ion implantation on the electrical and dielectric properties of CR-39

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chawla, Mahak, E-mail: mahak.chawla@gmail.com; Shekhawat, Nidhi; Goyal, Meetika

2016-05-23

The objective of the present work is to study the effect of 130 keV Ar{sup +} ions on the electrical and dielectric properties of CR-39 samples at various doses 5×10{sup 14}, 1×10{sup 15} and 1×10{sup 16} Ar{sup +} cm{sup −2}. Current-Voltage (I-V characteristics) measurements have been used to study the electrical properties of virgin and Ar{sup +} implanted CR-39 specimens. The current has been found to be increased with increasing voltage as well as with increasing ion dose. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz. The dielectric constant has been found tomore » be decreasing whereas dielectric loss factor increases with increasing ion fluence. These kind of behavior observed in the implanted specimens indicate towards the formation of carbonaceous clusters due to the cross linking, chemical bond cleavage, formation of free radicals. The changes observed in the dielectric behavior have been further correlated with the structural changes observed through I-V characteristics.« less

Breast cancer treatment by nanophotolysis approach

NASA Astrophysics Data System (ADS)

Ashiq, Muhammad Gul Bahar

2018-06-01

In this work, gold nanoparticles irradiated with nanosecond short pulse laser for breast cancer treatment is studied theoretically. Nanophotolysis is involved for selective damaging of breast cancer cells. Results shows that laser fluence of 1.5 J/cm2 interact with gold nanoparticles and generates a maximum number of ions. Laser light in the visible region interacts with the gold foil. At 700 nm, 12 × 1012 ions are produced for the laser intensity of 8.89 × 107 W/cm2. Slow increase in the Coulomb explosion pressure from 0.6 × 106 Pa to 2 × 106 Pa is observed for a cluster size of range 10 nm to 20 nm. Penetration of nanobullets in tumor increases with the increase of temperature from 39.83 °C to 62.20 °C. Number of cell damaged increases by increasing the number of ions (6 × 1016 cells are damaged by 9.59 × 1020 gold ions). Findings are compared with the other experimental results and are found in excellent agreement. It is concluded from current work that nanophotolysis therapy is may be useful in future for selective damaging of breast cancer cells.

Swift heavy ion irradiation of Pt nanocrystals: II. Structural changes and H desorption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giulian, R.; Araujo, L.L.; Kluth, P.

2014-09-24

The structural properties and H desorption from embedded Pt nanocrystals (NCs) following irradiation with swift heavy ions were investigated as a function of energy and fluence. From x-ray absorption near-edge spectroscopy analysis, Pt-H bonding was identified in NCs annealed in a forming gas (95% N{sub 2} + 5% H{sub 2}) ambient. The H content decreased upon irradiation and the desorption process was NC-size dependent such that larger NCs required a higher fluence to achieve a H-free state. Pt-H bonding and NC dissolution both perturbed the NC structural parameters (coordination number, bond-length and mean-square relative displacement) as determined with extended x-raymore » absorption fine structure measurements.« less

Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Park, Jun Woo; Jeong, Pil Seong; Choi, Suk-Ho; Lee, Hosun; Kong, Bo Hyun; Koun Cho, Hyung

2009-11-01

Amorphous InGaZnO (IGZO) thin films were grown using RF sputtering deposition at room temperature and their corresponding dielectric functions were measured. In order to reduce defects and increase carrier concentrations, we examined the effect of forming gas annealing and ion implantation. The band gap energy increased with increasing forming gas annealing temperature. We implanted the IGZO thin films with F- ions in order to decrease oxygen vacancies. For comparison, we also implanted InO- ions. Transmission electron microscopy showed that the amorphous phase undergoes transformation to a nanocrystalline phase due to annealing. We also observed InGaZnO4 nanocrystals having an In-(Ga/Zn) superlattice structure. As the annealing temperature increased, the optical gap energy increased due to crystallization. After annealing, we observed an oxygen-vacancy-related 1.9 eV peak for both unimplanted and InO-implanted samples. However, F- ion implantation substantially reduced the amplitude of the 1.9 eV peak, which disappeared completely at a F fluence of 5×1015 cm-2. We observed other defect-related peaks at 3.6 and 4.2 eV after annealing, which also disappeared after F implantation.

Origin of the enhanced exchange bias in polycrystalline-BiFeO3/Co bilayers by X-ray absorption Spectroscopy

NASA Astrophysics Data System (ADS)

Shen, J. D.; Yang, W. B.; Kumar, A.; Zhao, H. H.; Lai, Y. J.; Feng, L. S.; Xu, Q. Y.; Zhang, Y. Q.; Du, J.; Li, Q.

2018-04-01

Polycrystalline-BiFeO3(BFO)/Co bilayers were grown by pulsed laser deposition (PLD) and magnetron sputtering, with fast laser annealing under magnetic field. The enhanced exchange bias (EB) had been found in the BFO/Co bilayers (Appl. Surf. Sci. 367 (2016) 418). In order to reveal the origin of the enhanced EB in the samples, X-ray absorption Spectroscopy (XAS) of Fe 2p, Co 2p and O 1s were performed. The Co 2p XAS indicated the increase of Co oxidation state and the Fe 2p XAS of sample A and B under laser annealing processes showed that crystal field splitting energy decreased and led to the weakening of spin-orbit coupling with the increasing of the laser fluence. It was considered that the appearance of the oxidation state of Co and Fe2+ ions and the existence of the unidirectional anisotropy due to the laser fluence was responsible for the results and also for the enhanced EB.

Enhancement of Ag nanoparticles concentration by prior ion implantation

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Wang, Jun; Liu, Changlong

2017-09-01

Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

Effects of CPII implantation on the characteristics of diamond-like carbon films

NASA Astrophysics Data System (ADS)

Chen, Ya-Chi; Weng, Ko-Wei; Chao, Ching-Hsun; Lien, Shui-Yang; Han, Sheng; Chen, Tien-Lai; Lee, Ying-Chieh; Shih, Han-Chang; Wang, Da-Yung

2009-05-01

A diamond-like carbon film (DLC) was successfully synthesized using a hybrid PVD process, involving a filter arc deposition source (FAD) and a carbon plasma ion implanter (CPII). A quarter-torus plasma duct filter markedly reduced the density of the macro-particles. Graphite targets were used in FAD. Large electron and ion energies generated from the plasma duct facilitate the activation of carbon plasma and the deposition of high-quality DLC films. M2 tool steel was pre-implanted with 45 kV carbon ions before the DLC was deposited to enhance the adhesive and surface properties of the film. The ion mixing effect, the induction of residual stress and the phase transformation at the interface were significantly improved. The hardness of the DLC increased to 47.7 GPa and 56.5 GPa, and the wear life was prolonged to over 70 km with implantation fluences of 1 × 10 17 ions/cm 2 and 2 × 10 17 ions/cm 2, respectively.

Some characteristics of matrix-assisted UV laser desorption/ionization mass spectrometric analysis of large proteins

NASA Astrophysics Data System (ADS)

Perera, I. K.; Kantartzoglou, S.; Dyer, P. E.

1996-12-01

We have performed experiments to explore the characteristics of the matrix-assisted laser desorption/ionization (MALDI) process and to ascertain optimal operational conditions for observing intact molecular ions of large proteins. In this study, several methods have been adopted for the preparation of analyte samples. Of these, the samples prepared with the simple dried-droplet method were found to be the most suitable for the generation of the large molecular clusters, while the near-uniform spin-coated samples were observed to produce highly reproducible molecular ion signals of relatively high mass resolutions. A resulting mass spectrum which illustrates the formation of cluster ions up to the 26-mer [26M+H]+ of bovine insulin corresponding to a mass of about 150,000 Da, is presented. The effect of fluence on the extent of clustering of protein molecules has been studied, the results revealing the existence of an optimum fluence for detecting the large cluster ions. Investigations have also indicated that the use of polyethylene-coated metallic substrates as sample supports can considerably reduce the fragmentation of the matrix/analyte molecular ions and the desorption of "neat" MALDI matrices deposited on these polyethylene-coated sample probes enhance their aggregation, forming up to the heptamer [7M+H]+ of the matrix, ferulic acid. The dependence of the mass resolution on the applied acceleration voltage and the desorption fluence has been examined and the results obtained are discussed in terms of a simple analysis of the linear time-of-flight mass spectrometer. A spectrum of chicken egg lysozyme (M~14,306) displaying the high mass resolutions (M/[Delta]M~690) that can be attained when the mass spectrometer is operated in the reflectron mode is also presented.

Comparing Solar-Flare Acceleration of >-20 MeV Protons and Electrons Above Various Energies

NASA Technical Reports Server (NTRS)

Shih, Albert Y.

2010-01-01

A large fraction (up to tens of percent) of the energy released in solar flares goes into accelerated ions and electrons, and studies indicate that these two populations have comparable energy content. RHESSI observations have shown a striking close linear correlation between the 2.223 MeV neutron-capture gamma-ray line and electron bremsstrahlung emission >300 keV, indicating that the flare acceleration of >^20 MeV protons and >300 keV electrons is roughly proportional over >3 orders of magnitude in fluence. We show that the correlations of neutron-capture line fluence with GOES class or with bremsstrahlung emission at lower energies show deviations from proportionality, primarily for flares with lower fluences. From analyzing thirteen flares, we demonstrate that there appear to be two classes of flares with high-energy acceleration: flares that exhibit only proportional acceleration of ions and electrons down to 50 keV and flares that have an additional soft, low-energy bremsstrahlung component, suggesting two separate populations of accelerated electrons. We use RHESSI spectroscopy and imaging to investigate a number of these flares in detail.

Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

NASA Astrophysics Data System (ADS)

Harmatha, Ladislav; Mikolášek, Miroslav; Stuchlíková, L'ubica; Kósa, Arpád; Žiška, Milan; Hrubčín, Ladislav; Skuratov, Vladimir A.

2015-11-01

The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm-2 to 5 × 1010 cm-2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Deuterium retention in tungsten in dependence of the surface conditions

NASA Astrophysics Data System (ADS)

Ogorodnikova, O. V.; Roth, J.; Mayer, M.

2003-03-01

The paper reviews hydrogen isotope retention and migration in tungsten (W). Due to a large scatter of the deuterium (D) retention database, new measurements of ion-driven D retention in polycrystalline W foil have been performed to clarify the mechanism of hydrogen isotope inventory in W. Deuterium retention has been investigated as a function of ion fluence, implantation temperature, incident energy and surface conditions. Special attention has been given on the investigation of D retention in thin films of tungsten carbide and tungsten oxide which can be formed on W surface in a fusion device. Such kinds of films increase the D retention in W. Several points are reviewed: (i) inventory in pure W, (ii) inventory in W pre-implanted by carbon ions and (iii) inventory in tungsten oxide.

Nanoscale self-recovery of resistive switching in Ar+ irradiated TiO2-x films

NASA Astrophysics Data System (ADS)

Barman, A.; Saini, C. P.; Sarkar, P. K.; Das, D.; Dhar, S.; Singh, M.; Sinha, A. K.; Kanjilal, D.; Gupta, M.; Phase, D. M.; Kanjilal, A.

2017-11-01

Nanoscale evidence of self-recovery in resistive switching (RS) behavior was found in TiO2-x film by conductive atomic force microscopy when exposed to Ar+-ions above a threshold fluence of 1  ×  1016 ions cm-2. This revealed an evolution and gradual disappearance of bipolar RS-loops, followed by reappearance with increasing number of voltage sweep. This was discussed in the realm of oxygen vacancy (OV) driven formation, dissolution and reformation of conducting filaments. The presence of OVs in ion-beam irradiated TiO2-x films was evidenced by decreasing trend of work function in scanning-Kelvin probe microscopy, and was further verified by x-ray absorption near edge spectroscopy at Ti and O-K edges.

Microstructure, hardness and modulus of carbon-ion-irradiated new SiC fiber (601-4)

NASA Astrophysics Data System (ADS)

Huang, Qing; Lei, Guanhong; Liu, Renduo; Li, Jianjian; Yan, Long; Li, Cheng; Liu, Weihua; Wang, Mouhua

2018-05-01

Two types of SiC fibers, one is low-oxygen and carbon-rich fiber denoted by 601-4 and the other is low-oxygen and near-stoichiometric Tyranno SA, were irradiated with 450 keV C+ ions at room temperature. The Raman spectra indicate that irradiation induced distortion and amorphization of SiC crystallites in fibers. TEM characterization of Tyranno SA suggests that SiC crystallites undergo a continued fragmentation into smaller crystalline islands and a continued increase of surrounding amorphous structure. The SiC nano-crystallites (<15 nm) in 601-4 fiber are more likely to be amorphized than larger crystallites (∼200 nm) in Tyranno SA. The hardness and modulus of 601-4 continuously decreases with increasing fluence, while that of Tyranno SA first increases and then decreases.

Influence of radiation damage on ruby as a pressure gauge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schuster, B.; GSI Helmholtzzentrum fuer Schwerionenforschung, Planckstr. 1, 64291 Darmstadt; Weikusat, C.

2010-11-01

This study tackles the question if ruby crystals, irradiated with energetic heavy ions, can still be used as reliable pressure sensors. The problem is linked to novel irradiation experiments, exposing pressurized samples to swift heavy-ion beams. In order to test and quantify a possible influence of radiation damage on the laser-induced fluorescence lines of ruby (Al{sub 2}O{sub 3}:Cr{sup 3+}), small crystals were exposed to different heavy ions (Xe, Au, and U) with kinetic energies of several giga-electron volt at ambient as well as high-pressure conditions. With increasing fluence (ions/cm{sup 2}), the R{sub 1} and R{sub 2} lines shift both tomore » lower wavelengths which leads to an underestimation of the pressure. An empirical correction term {epsilon} is proposed to include the irradiation damage effect into the commonly employed ruby calibration scale.« less

Thermoelectric properties of Zn4Sb3/CeFe(4-x)CoxSb12 nano-layered superlattices modified by MeV Si ion beam

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Minamisawa, R. A.; Muntele, C. I.; Ila, D.

2014-08-01

We prepared multilayers of superlattice thin film system with 50 periodic alternating nano-layers of semiconducting half-Heusler β-Zn4Sb3 and skutterudite CeFe2Co2Sb12 compound thin films using ion beam assisted deposition (IBAD) with Au layers deposited on both sides as metal contacts. The deposited multilayer thin films have alternating layers about 5 nm thick. The total thickness of the multilayer system is 275 nm. The superlattices were then bombarded by 5 MeV Si ion at six different fluences to form nano-cluster structures. The film thicknesses and composition were monitored by Rutherford backscattering spectrometry (RBS) before and after MeV ion bombardment. We have measured the thermoelectric efficiency, Figure of Merit ZT, of the fabricated device by measuring the cross plane thermal conductivity by the 3rd harmonic (3ω) method, the cross plane Seebeck coefficient, and the electrical conductivity using the van der Pauw method before and after the MeV ion bombardments. We reached the remarkable thermoelectric Figure of Merit results at optimal fluences.

Heavy ion irradiations on synthetic hollandite-type materials: Ba1.0Cs0.3A2.3Ti5.7O16 (A=Cr, Fe, Al)

NASA Astrophysics Data System (ADS)

Tang, Ming; Tumurugoti, Priyatham; Clark, Braeden; Sundaram, S. K.; Amoroso, Jake; Marra, James; Sun, Cheng; Lu, Ping; Wang, Yongqiang; Jiang, Ying.-Bing.

2016-07-01

The hollandite supergroup of minerals has received considerable attention as a nuclear waste form for immobilization of Cs. The radiation stability of synthetic hollandite-type compounds described generally as Ba1.0Cs0.3A2.3Ti5.7O16 (A=Cr, Fe, Al) were evaluated by heavy ion (Kr) irradiations on polycrystalline single phase materials and multiphase materials incorporating the hollandite phases. Ion irradiation damage effects on these samples were examined using grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). Single phase compounds possess tetragonal structure with space group I4/m. GIXRD and TEM observations revealed that 600 keV Kr irradiation-induced amorphization on single phase hollandites compounds occurred at a fluence between 2.5×1014 Kr/cm2 and 5×1014 Kr/cm2. The critical amorphization fluence of single phase hollandite compounds obtained by in situ 1 MeV Kr ion irradiation was around 3.25×1014 Kr/cm2. The hollandite phase exhibited similar amorphization susceptibility under Kr ion irradiation when incorporated into a multiphase system.

Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Beuneu, François

2005-04-01

We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO2:Y with 9.5 mol% Y2O3, by swift electron and ion-irradiations. YSZ single crystals with the <1 0 0> orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13C ions. Electron and ion beams produce the same two color centers, namely an F+-type center (singly ionized oxygen vacancy) and the so-called T-center (Zr3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment.

Investigation of the influence of irradiation with Fe+7 ions on structural properties of AlN ceramics

NASA Astrophysics Data System (ADS)

Kozlovskiy, A.; Dukenbayev, K.; Ivanov, I.; Kozin, S.; Aleksandrenko, V.; Kurakhmedov, A.; Sambaev, E.; Kenzhina, I.; Tosi, D.; Loginov, V.; Zdorovets, M.

2018-06-01

The paper presents the results of investigation of defect formation in AlN ceramics under Fe+7 ion irradiation with a fluence from 1 × 1011 to 1 × 1014 ion cm‑2. The change in the main crystallographic characteristics, the decrease in the magnitude of Griffiths criterion, and the increase in the average voltage as a result of irradiation are caused by the appearance of additional defects in the structure and their further evolution leading to a change in the degree of crystallinity. For samples irradiated with Fe+7 ions to a dose of 1 × 1011 ion cm‑2, the formation of pyramidal hillocks is observed on the surface, whose average height is 17–20 nm. An increase in the irradiation dose leads to an increase in chillocks size and their density. At the same time, at large irradiation doses, the formation of conglomerates of chyllocks and grooves on the samples surface is observed. The change in surface morphology, the formation of chyllocks on the ceramic surface, and the dependence of the change in crystallographic characteristics during irradiation make it possible to unambiguously associate the formation of radiation defects in the structure of the ceramic with energy losses in elastic and inelastic interactions of iron ions with lattice atoms.

SPORT: A new sub-nanosecond time-resolved instrument to study swift heavy ion-beam induced luminescence - Application to luminescence degradation of a fast plastic scintillator

NASA Astrophysics Data System (ADS)

Gardés, E.; Balanzat, E.; Ban-d'Etat, B.; Cassimi, A.; Durantel, F.; Grygiel, C.; Madi, T.; Monnet, I.; Ramillon, J.-M.; Ropars, F.; Lebius, H.

2013-02-01

We developed a new sub-nanosecond time-resolved instrument to study the dynamics of UV-visible luminescence under high stopping power heavy ion irradiation. We applied our instrument, called SPORT, on a fast plastic scintillator (BC-400) irradiated with 27-MeV Ar ions having high mean electronic stopping power of 2.6 MeV/μm. As a consequence of increasing permanent radiation damages with increasing ion fluence, our investigations reveal a degradation of scintillation intensity together with, thanks to the time-resolved measurement, a decrease in the decay constant of the scintillator. This combination indicates that luminescence degradation processes by both dynamic and static quenching, the latter mechanism being predominant. Under such high density excitation, the scintillation deterioration of BC-400 is significantly enhanced compared to that observed in previous investigations, mainly performed using light ions. The observed non-linear behaviour implies that the dose at which luminescence starts deteriorating is not independent on particles' stopping power, thus illustrating that the radiation hardness of plastic scintillators can be strongly weakened under high excitation density in heavy ion environments.

Fluence-based relative biological effectiveness for charged particle carcinogenesis in mouse Harderian gland

NASA Technical Reports Server (NTRS)

Alpen, E. L.; Power-Risius, P.; Curtis, S. B.; Deguzman, R.; Fry, R. J. M.

1994-01-01

Neoplasia in the rodent Harderian gland has been used to determine the carcinogenic potential of irradiation by HZE particles. Ions from protons to lanthanum at energies up to 670 MeV/a have been used to irradiate mice, and prevalence of Harderian gland tumors has been measured 16 months after irradiation. The Relative Biological Effectiveness (RBE) for tumor induction has been expressed as the RBE(sub max), which is the ratio of the initial slopes of the dose vs prevalence curve. The RBE(sub max) has been found to be approximately 30 for ions with Linear Energy Transfer (LET) values in excess of 100 keV/micrometer. Analysis on the basis of fluence as a substitute for dose has shown that on a per particle basis all of the ions with LET values in excess of 100 keV/micrometer have equal effectiveness. An analysis of the probabilities of ion traversals of the nucleus has shown that for these high stopping powers that a single hit is effective in producing neoplastic transformation.

Dependence of nanomechanical modification of polymers on plasma-induced cross-linking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tajima, S.; Komvopoulos, K.

2007-01-01

The nanomechanical properties of low-density polyethylene (LDPE) modified by inductively coupled, radio-frequency Ar plasma were investigated by surface force microscopy. The polymer surface was modified under plasma conditions of different ion energy fluences and radiation intensities obtained by varying the sample distance from the plasma power source. Nanoindentation results of the surface stiffness versus maximum penetration depth did not reveal discernible differences between untreated and plasma-treated LDPE, presumably due to the small thickness of the modified surface layer that resulted in a substrate effect. On the contrary, nanoscratching experiments demonstrated a significant increase in the surface shear resistance of plasma-modifiedmore » LDPE due to chain cross-linking. These experiments revealed an enhancement of cross-linking with increasing ion energy fluence and radiation intensity, and a tip size effect on the friction force and dominant friction mechanisms (adhesion, plowing, and microcutting). In addition, LDPE samples with a LiF crystal shield were exposed to identical plasma conditions to determine the role of vacuum ultraviolet (VUV) and ultraviolet (UV) radiation in the cross-linking process. The cross-linked layer of plasma-treated LDPE exhibited much higher shear strength than that of VUV/UV-treated LDPE. Plasma-induced surface modification of the nanomechanical properties of LDPE is interpreted in the context of molecular models of the untreated and cross-linked polymer surfaces derived from experimental findings.« less

Role of positive ions in determining the deposition rate and film chemistry of continuous wave hexamethyl disiloxane plasmas.

PubMed

Michelmore, Andrew; Bryant, Paul M; Steele, David A; Vasilev, Krasimir; Bradley, James W; Short, Robert D

2011-10-04

New data shed light on the mechanisms of film growth from low power, low pressure plasmas of organic compounds. These data rebalance the widely held view that plasma polymer formation is due to radical/neutral reactions only and that ions play no direct role in contributing mass at the surface. Ion reactions are shown to play an important role in both the plasma phase and at the surface. The mass deposition rate and ion flux in continuous wave hexamethyl disiloxane (HMDSO) plasmas have been studied as a function of pressure and applied RF power. Both the deposition rate and ion flux were shown to increase with applied power; however, the deposition rate increased with pressure while the ion flux decreased. Positive ion mass spectrometry of the plasma phase demonstrates that the dominant ionic species is the (HMDSO-CH(3))(+) ion at m/z 147, but significant fragmentation and subsequent oligomerization was also observed. Chemical analysis of the deposits by X-ray photoelectron spectroscopy and secondary ion mass spectrometry show that the deposits were consistent with deposits reported by previous workers grown from plasma and hyperthermal (HMDSO-CH(3))(+) ions. Increasing coordination of silicon with oxygen in the plasma deposits reveals the role of ions in the growth of plasma polymers. Comparing the calculated film thicknesses after a fixed total fluence of 1.5 × 10(19) ions/m(2) to results for hyperthermal ions shows that ions can contribute significantly to the total absorbed mass in the deposits. © 2011 American Chemical Society

Enhancing image contrast of carbon nanotubes on cellular background using helium ion microscope by varying helium ion fluence.

PubMed

Dykas, M M; Poddar, K; Yoong, S L; Viswanathan, V; Mathew, S; Patra, A; Saha, S; Pastorin, G; Venkatesan, T

2018-01-01

Carbon nanotubes (CNTs) have become an important nano entity for biomedical applications. Conventional methods of their imaging, often cannot be applied in biological samples due to an inadequate spatial resolution or poor contrast between the CNTs and the biological sample. Here we report a unique and effective detection method, which uses differences in conductivities of carbon nanotubes and HeLa cells. The technique involves the use of a helium ion microscope to image the sample with the surface charging artefacts created by the He + and neutralised by electron flood gun. This enables us to obtain a few nanometre resolution images of CNTs in HeLa Cells with high contrast, which was achieved by tailoring the He + fluence. Charging artefacts can be efficiently removed for conductive CNTs by a low amount of electrons, the fluence of which is not adequate to discharge the cell surface, resulting in high image contrast. Thus, this technique enables rapid detection of any conducting nano structures on insulating cellular background even in large fields of view and fine spatial resolution. The technique demonstrated has wider applications for researchers seeking enhanced contrast and high-resolution imaging of any conducting entity in a biological matrix - a commonly encountered issue of importance in drug delivery, tissue engineering and toxicological studies. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Monte Carlo transport model comparison with 1A GeV accelerated iron experiment: heavy-ion shielding evaluation of NASA space flight-crew foodstuff

NASA Astrophysics Data System (ADS)

Stephens, D. L.; Townsend, L. W.; Miller, J.; Zeitlin, C.; Heilbronn, L.

Deep-space manned flight as a reality depends on a viable solution to the radiation problem. Both acute and chronic radiation health threats are known to exist, with solar particle events as an example of the former and galactic cosmic rays (GCR) of the latter. In this experiment Iron ions of 1A GeV are used to simulate GCR and to determine the secondary radiation field created as the GCR-like particles interact with a thick target. A NASA prepared food pantry locker was subjected to the iron beam and the secondary fluence recorded. A modified version of the Monte Carlo heavy ion transport code developed by Zeitlin at LBNL is compared with experimental fluence. The foodstuff is modeled as mixed nuts as defined by the 71 st edition of the Chemical Rubber Company (CRC) Handbook of Physics and Chemistry. The results indicate a good agreement between the experimental data and the model. The agreement between model and experiment is determined using a linear fit to ordered pairs of data. The intercept is forced to zero. The slope fit is 0.825 and the R 2 value is 0.429 over the resolved fluence region. The removal of an outlier, Z=14, gives values of 0.888 and 0.705 for slope and R 2 respectively.

Structural Changes in Polymer Films by Fast Ion Implantation

NASA Astrophysics Data System (ADS)

Parada, M. A.; Minamisawa, R. A.; Muntele, C.; Muntele, I.; De Almeida, A.; Ila, D.

2006-11-01

In applications from food wrapping to solar sails, polymers films can be subjected to intense charged panicle bombardment and implantation. ETFE (ethylenetetrafluoroethylene) with high impact resistance is used for pumps, valves, tie wraps, and electrical components. PFA (tetrafluoroethylene-per-fluoromethoxyethylene) and FEP (tetrafluoroethylene-hexa-fluoropropylene) are sufficiently biocompatible to be used as transcutaneous implants since they resist damage from the ionizing space radiation, they can be used in aerospace engineering applications. PVDC (polyvinyllidene-chloride) is used for food packaging, and combined with others plastics, improves the oxygen barrier responsible for the food preservation. Fluoropolymers are also known for their radiation dosimetry applications, dependent on the type and energy of the radiation, as well as of the beam intensity. In this work ETFE, PFA, FEP and PVDC were irradiated with ions of keV and MeV energies at several fluences and were analyzed through techniques as RGA, OAP, FTIR, ATR and Raman spectrophotometry. CF3 is the main specie emitted from PFA and FEP when irradiated with MeV protons. H and HF are released from ETFE due to the broken C-F and C-H bonds when the polymer is irradiated with keV Nitrogen ions and protons. At high fluence, especially for keV Si and N, damage due to carbonization is observed with the formation of hydroperoxide and polymer dehydroflorination. The main broken bonds in PVDC are C-O and C-Cl, with the release of Cl and the formation of double carbon bonds. The ion fluence that causes damage, which could compromise fluoropolymer film applications, has been determined.

Production of clinically useful positron emitter beams during carbon ion deceleration.

PubMed

Lazzeroni, M; Brahme, A

2011-03-21

In external beam radiation therapy, radioactive beams offer the best clinical solution to simultaneously treat and in vivo monitor the dose delivery and tumor response using PET or PET-CT imaging. However, difficulties mainly linked to the low production efficiency have so far limited their use. This study is devoted to the analysis of the production of high energy (11)C fragments, preferably by projectile fragmentation of a stable monodirectional and monoenergetic primary (12)C beam in different absorbing materials (decelerators) in order to identify the optimal elemental composition. The study was performed using the Monte Carlo code SHIELD-HIT07. The track length and fluence of generated secondary particles were scored in a uniform absorber of 300 cm length and 10 cm radius, divided into slices of 1 cm thickness. The (11)C fluence build-up and mean energy variation with increasing decelerator depth are presented. Furthermore, the fluence of the secondary (11)C beam was studied as a function of its mean energy and the corresponding remaining range in water. It is shown that the maximum (11)C fluence build-up is high in compounds where the fraction by weight of hydrogen is high, being the highest in liquid hydrogen. Furthermore, a cost effective alternative solution to the single medium initially envisaged is presented: a two-media decelerator that comprises a first liquid hydrogen section followed by a second decelerating section made of a hydrogen-rich material, such as polyethylene (C(2)H(4)). The purpose of the first section is to achieve a fast initial (11)C fluence build-up, while the second section is primarily designed to modulate the mean energy of the generated (11)C beam in order to reach the tumor depth. Finally, it was demonstrated that, if the intensity of the primary (12)C beam can be increased by an order of magnitude, a sufficient intensity of the secondary (11)C beam is achieved for therapy and subsequent therapeutic PET imaging sessions. Such an increase in the intensity might be easily achieved with a superconducting cyclotron.

Modification of local order in FePd films by low energy He{sup +} irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merkel, D. G.; Tancziko, F.; Sajti, Sz.

2008-07-01

Owing to their strong perpendicular magnetic anisotropy, FePd, CoPd, and their Co(Fe)Pt counterparts are candidate materials for ultrahigh density magnetic recording. The stability and magnetic properties of such films are largely dependent on the orientation and local distribution of the L1{sub 0} FePd phase fraction. Therefore, the formation and transformation of the L1{sub 0} phase in such thin films have been the subject of continued interest. Highly ordered epitaxial FePd(001) thin films (with an L1{sub 0} phase fraction of 0.81) were prepared by molecular-beam epitaxy on a MgO(001) substrate. The effect of postgrown room temperature, 130 keV He{sup +} irradiationmore » was investigated at fluences up to 14.9x10{sup 15} ions/cm{sup 2}. X-ray diffraction and conversion electron Moessbauer spectroscopy revealed that with increasing fluence, the L1{sub 0} FePd phase decomposes into the face centered cubic phase with random Fe and Pd occupation of the sites. A partially ordered local environment exhibiting a large hyperfine magnetic field also develops. Upon He{sup +} irradiation, the lattice parameter c of the FePd L1{sub 0} structure increases and the long range order parameter S steeply decreases. The Fe-Fe nearest-neighbor coordination in the Fe-containing environments increases on average from Fe{sub 47}Pd{sub 53} to Fe{sub 54}Pd{sub 46}, indicating a tendency of formation iron-rich clusters. The equilibrium parameters corresponding to the equiatomic L1{sub 0} phase were found at different fluences by conversion electron Moessbauer spectroscopy and by x-ray diffraction a difference, from which a plane-perpendicular compressive stress and a corresponding in-plane tensile stress are conjectured. The steep increase in the interface roughness above 7.4x10{sup 15} ions/cm{sup 2} is interpreted as a percolation-type behavior related to the high diffusion anisotropy in the L1{sub 0} phase.« less

Gallium arsenide/gold nanostructures deposited using plasma method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangla, O.; Physics Department, Hindu College, University of Delhi, Delhi, 110007; Roy, S.

2016-05-23

The fabrication of gallium arsenide (GaAs) nanostructures on gold coated glass, quartz and silicon substrates using the high fluence and highly energetic ions has been reported. The high fluence and highly energetic ions are produced by the hot, dense and extremely non-equilibrium plasma in a modified dense plasma focus device. The nanostructures having mean size about 14 nm, 13 nm and 18 nm are deposited on gold coated glass, quartz and silicon substrates, respectively. The optical properties of nanostructures studied using absorption spectra show surface plasmon resonance peak of gold nanoparticles. In addition, the band-gap of GaAs nanoparticles is more than that ofmore » bulk GaAs suggesting potential applications in the field of optoelectronic and sensor systems.« less

Geomagnetic transmission disturbances and heavy-ion fluences observed in low Earth orbit during the solar energetic particle events of October 1989.

PubMed

Boberg, P R; Tylka, A J; Adams, J H; Beahm, L P; Fluckiger, E O; Kleis, T; Kobel, E

1996-01-01

The large solar energetic particle (SEP) events and simultaneous large geomagnetic disturbances observed during October 1989 posed a significant, rapidly evolving space radiation hazard. Using data from the GOES-7, NOAA-10, IMP-8 and LDEF satellites, we determined the geomagnetic transmission, heavy ion fluences, mean Fe ionic charge state, and effective radiation hazard observed in low Earth orbit (LEO) for these SEPs. We modeled the geomagnetic transmission by tracing particles through the combination of the internal International Geomagnetic Reference Field (IGRF) and the Tsyganenko (1989) magnetospheric field models, extending the modeling to large geomagnetic disturbances. We used our results to assess the radiation hazard such very large SEP events would pose in the anticipated 52 degrees inclination space station orbit.

Microwave nonlinearity and photoresponse of superconducting resonators with columnar defect micro-channels

NASA Astrophysics Data System (ADS)

Remillard, S. K.; Kirkendall, D.; Ghigo, G.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Yang, Z.; Mendelsohn, N. A.; Ghamsari, B. G.; Friedman, B.; Jung, P.; Anlage, S. M.

2014-09-01

Micro-channels of nanosized columnar tracks were planted by heavy-ion irradiation into superconducting microwave microstrip resonators that were patterned from YBa2Cu3O7 - x thin films on LaAlO3 substrates. Three different ion fluences were used, producing different column densities, with each fluence having a successively greater impact on the microwave nonlinearity of the device, as compared to a control sample. Photoresponse (PR) images made with a 638 nm rastered laser beam revealed that the channel is a location of enhanced PR and a hot spot for the generation of intermodulation distortion. The microwave PR technique was also advanced in this work by investigating the role of coupling strength on the distribution of PR between inductive and resistive components.

Model for Cumulative Solar Heavy Ion Energy and LET Spectra

NASA Technical Reports Server (NTRS)

Xapsos, Mike; Barth, Janet; Stauffer, Craig; Jordan, Tom; Mewaldt, Richard

2007-01-01

A probabilistic model of cumulative solar heavy ion energy and lineary energy transfer (LET) spectra is developed for spacecraft design applications. Spectra are given as a function of confidence level, mission time period during solar maximum and shielding thickness. It is shown that long-term solar heavy ion fluxes exceed galactic cosmic ray fluxes during solar maximum for shielding levels of interest. Cumulative solar heavy ion fluences should therefore be accounted for in single event effects rate calculations and in the planning of space missions.

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

2018-04-01

A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

Study of electronic sputtering of CaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Khan, Saif A.; Kumar, Tanuj; Tripathi, Ambuj; Avasthi, D. K.; Pandey, Avinash C.

2014-01-01

In the present work thin films of CaF2 deposited on Si substrate by electron beam evaporation have been investigated for swift heavy ions induced sputtering and surface modifications. Glancing angle X-ray Diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was performed to determine the sputter yield of CaF2 and a decrease in sputter yield has been observed with increase in film thickness. Thermal spike model has been applied to explain this. The confinement of energy in the grains having size smaller than the electron mean free path (λ) results in a higher sputtering yield. Atomic force microscopy (AFM) studies of irradiated CaF2 thin films show formation of cracks on film surface at a fluence of 5 × 1012 ions/cm2. Also RBS results confirm the removal of film from the surface and more exposure of substrate with increasing dose of ions.

Influence of Au ions irradiation damage on helium implanted tungsten

NASA Astrophysics Data System (ADS)

Kong, Fanhang; Qu, Miao; Yan, Sha; Cao, Xingzhong; Peng, Shixiang; Zhang, Ailin; Xue, Jianming; Wang, Yugang; Zhang, Peng; Wang, Baoyi

2017-10-01

The damages of implanted helium ions together with energetic neutrons in tungsten is concerned under the background of nuclear fusion related materials research. Helium is lowly soluble in tungsten and has high binding energy with vacancy. In present work, noble metal Au ions were used to study the synergistic effect of radiation damage and helium implantation. Nano indenter and the Doppler broaden energy spectrum of positron annihilation analysis measurements were used to research the synergy of radiation damage and helium implantation in tungsten. In the helium fluence range of 4.8 × 1015 cm-2-4.8 × 1016 cm-2, vacancies played a role of trappers only at the very beginning of bubble nucleation. The size and density is not determined by vacancies, but the effective capture radius between helium bubbles and scattered helium atoms. Vacancies were occupied by helium bubbles even at the lowest helium fluence, leaving dislocations and helium bubbles co-exist in tungsten materials.

100 MeV swift Si{sup 7+} ion induced thermoluminescence studies of nanocrystalline erbium doped ZrO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lokesha, H. S.; Nagabhushana, K. R., E-mail: bhushankr@gmail.com; Singh, Fouran

2015-06-24

Pure and erbium (1mol%) doped nanocrystalline ZrO{sub 2} is synthesized by combustion technique. Thermoluminescence (TL) properties ZrO{sub 2}pellets annealed at 873 K and irradiated by 100 MeV swift Si{sup 7+} ion for various fluence are recorded. The evolution crystalline structure and crystallite size are done using by XRD data. Two TL glow curves, a well resolved one peak at ∼420 K and an unresolved with peak at ∼598 K are observed. TL intensity increases up to 3×10{sup 12} ions cm{sup −2} beyond which the TL intensity decreases. The glow peak shape method is used to calculate the TL trap parameter and discussed in thismore » paper.« less

Metal impurity-assisted formation of nanocone arrays on Si by low energy ion-beam irradiation

NASA Astrophysics Data System (ADS)

Steeves Lloyd, Kayla; Bolotin, Igor L.; Schmeling, Martina; Hanley, Luke; Veryovkin, Igor V.

2016-10-01

Fabrication of nanocone arrays on Si surfaces was demonstrated using grazing incidence irradiation with 1 keV Ar+ ions concurrently sputtering the surface and depositing metal impurity atoms on it. Among three materials compared as co-sputtering targets Si, Cu and stainless steel, only steel was found to assist the growth of dense arrays of nanocones at ion fluences between 1018 and 1019 ions/cm2. The structural characterization of samples irradiated with these ion fluences using Scanning Electron Microscopy and Atomic Force Microscopy revealed that regions far away from co-sputtering targets are covered with nanoripples, and that nanocones popped-up out of the rippled surfaces when moving closer to co-sputtering targets, with their density gradually increasing and reaching saturation in the regions close to these targets. The characterization of the samples' chemical composition with Total Reflection X-ray Fluorescence Spectrometry and X-ray Photoelectron Spectroscopy revealed that the concentration of metal impurities originating from stainless steel (Fe, Cr and Ni) was relatively high in the regions with high density of nanocones (Fe reaching a few atomic percent) and much lower (factor of 10 or so) in the region of nanoripples. Total Reflection X-ray Fluorescence Spectrometry measurements showed that higher concentrations of these impurities are accumulated under the surface in both regions. X-ray Photoelectron Spectroscopy experiments showed no direct evidence of metal silicide formation occurring on one region only (nanocones or nanoripples) and thus showed that this process could not be the driver of nanocone array formation. Also, these measurements indicated enhancement in oxide formation on regions covered by nanocones. Overall, the results of this study suggest that the difference in concentration of metal impurities in the thin near-surface layer forming under ion irradiation might be responsible for the differences in surface structures.

Charge Collection Efficiency in a segmented semiconductor detector interstrip region

NASA Astrophysics Data System (ADS)

Alarcon-Diez, V.; Vickridge, I.; Jakšić, M.; Grilj, V.; Schmidt, B.; Lange, H.

2017-09-01

Charged particle semiconductor detectors have been used in Ion Beam Analysis (IBA) for over four decades without great changes in either design or fabrication. However one area where improvement is desirable would be to increase the detector solid angle so as to improve spectrum statistics for a given incident beam fluence. This would allow the use of very low fluences opening the way, for example, to increase the time resolution in real-time RBS or for analysis of materials that are highly sensitive to beam damage. In order to achieve this goal without incurring the costs of degraded resolution due to kinematic broadening or large detector capacitance, a single-chip segmented detector (SEGDET) was designed and built within the SPIRIT EU infrastructure project. In this work we present the Charge Collection Efficiency (CCE) in the vicinity between two adjacent segments focusing on the interstrip zone. Microbeam Ion Beam Induced Charge (IBIC) measurements with different ion masses and energies were used to perform X-Y mapping of (CCE), as a function of detector operating conditions (bias voltage changes, detector housing possibilities and guard ring configuration). We show the (CCE) in the edge region of the active area and have also mapped the charge from the interstrip region, shared between adjacent segments. The results indicate that the electrical extent of the interstrip region is very close to the physical extent of the interstrip and guard ring structure with interstrip impacts contributing very little to the complete spectrum. The interstrip contributions to the spectra that do occur, can be substantially reduced by an offline anti-coincidence criterion applied to list mode data, which should also be easy to implement directly in the data acquisition software.

Effect of 50 MeV Li3 + irradiation on structural and electrical properties of Mn-doped ZnO

NASA Astrophysics Data System (ADS)

Neogi, S. K.; Chattopadhyay, S.; Banerjee, Aritra; Bandyopadhyay, S.; Sarkar, A.; Kumar, Ravi

2011-05-01

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn1 - xMnxO-type system. Zn1 - xMnxO (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li3 + ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn0.98Mn0.02O, whereas for the Zn0.96Mn0.04O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn0.98Mn0.02O, the observed sharp decrease in room temperature resistivity (ρRT) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn0.96Mn0.04O, ρRT decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn0.98Mn0.02O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn0.96Mn0.04O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO.

PubMed

Neogi, S K; Chattopadhyay, S; Banerjee, Aritra; Bandyopadhyay, S; Sarkar, A; Kumar, Ravi

2011-05-25

The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn(1 - x)Mn(x)O-type system. Zn(1 - x)Mn(x)O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li(3+) ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn(0.98)Mn(0.02)O, whereas for the Zn(0.96)Mn(0.04)O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn(0.98)Mn(0.02)O, the observed sharp decrease in room temperature resistivity (ρ(RT)) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn(0.96)Mn(0.04)O, ρ(RT) decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn(0.98)Mn(0.02)O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn(0.96)Mn(0.04)O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Argon ion beam induced surface pattern formation on Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofsäss, H.; Bobes, O.; Zhang, K.

The development of self-organized surface patterns on Si due to noble gas ion irradiation has been studied extensively in the past. In particular, Ar ions are commonly used and the pattern formation was analyzed as function of ion incidence angle, ion fluence, and ion energies between 250 eV and 140 keV. Very few results exist for the energy regime between 1.5 keV and 10 keV and it appears that pattern formation is completely absent for these ion energies. In this work, we present experimental data on pattern formation for Ar ion irradiation between 1 keV and 10 keV and ion incidence angles between 50° and 75°.more » We confirm the absence of patterns at least for ion fluences up to 10{sup 18} ions/cm{sup 2}. Using the crater function formalism and Monte Carlo simulations, we calculate curvature coefficients of linear continuum models of pattern formation, taking into account contribution due to ion erosion and recoil redistribution. The calculations consider the recently introduced curvature dependence of the erosion crater function as well as the dynamic behavior of the thickness of the ion irradiated layer. Only when taking into account these additional contributions to the linear theory, our simulations clearly show that that pattern formation is strongly suppressed between about 1.5 keV and 10 keV, most pronounced at 3 keV. Furthermore, our simulations are now able to predict whether or not parallel oriented ripple patterns are formed, and in case of ripple formation the corresponding critical angles for the whole experimentally studied energies range between 250 eV and 140 keV.« less

Accuracy of Spencer-Attix cavity theory and calculations of fluence correction factors for the air kerma formalism

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Russa, D. J.; Rogers, D. W. O.

EGSnrc calculations of ion chamber response and Spencer-Attix (SA) restricted stopping-power ratios are used to test the assumptions of the SA cavity theory and to assess the accuracy of this theory as it applies to the air kerma formalism for {sup 60}Co beams. Consistent with previous reports, the EGSnrc calculations show that the SA cavity theory, as it is normally applied, requires a correction for the perturbation of the charged particle fluence (K{sub fl}) by the presence of the cavity. The need for K{sub fl} corrections arises from the fact that the standard prescription for choosing the low-energy threshold {Delta}more » in the SA restricted stopping-power ratio consistently underestimates the values of {Delta} needed if no perturbation to the fluence is assumed. The use of fluence corrections can be avoided by appropriately choosing {Delta}, but it is not clear how {Delta} can be calculated from first principles. Values of {Delta} required to avoid K{sub fl} corrections were found to be consistently higher than {Delta} values obtained using the conventional approach and are also observed to be dependent on the composition of the wall in addition to the cavity size. Values of K{sub fl} have been calculated for many of the graphite-walled ion chambers used by the national metrology institutes around the world and found to be within 0.04% of unity in all cases, with an uncertainty of about 0.02%.« less

Matrix Optical Absorption in UV-MALDI MS

NASA Astrophysics Data System (ADS)

Robinson, Kenneth N.; Steven, Rory T.; Bunch, Josephine

2018-03-01

In ultraviolet matrix-assisted laser desorption/ionization mass spectrometry (UV-MALDI MS) matrix compound optical absorption governs the uptake of laser energy, which in turn has a strong influence on experimental results. Despite this, quantitative absorption measurements are lacking for most matrix compounds. Furthermore, despite the use of UV-MALDI MS to detect a vast range of compounds, investigations into the effects of laser energy have been primarily restricted to single classes of analytes. We report the absolute solid state absorption spectra of the matrix compounds α-cyano-4-hydroxycinnamic acid (CHCA), para-nitroaniline (PNA), 2-mercaptobenzothiazole (MBT), 2,5-dihydroxybenzoic acid (2,5-DHB), and 2,4,6-trihydroxyacetophenone (THAP). The desorption/ionization characteristics of these matrix compounds with respect to laser fluence was investigated using mixed systems of matrix with either angiotensin II, PC(34:1) lipid standard, or haloperidol, acting as representatives for typical classes of analyte encountered in UV-MALDI MS. The first absolute solid phase spectra for PNA, MBT, and THAP are reported; additionally, inconsistencies between previously published spectra for CHCA are resolved. In light of these findings, suggestions are made for experimental optimization with regards to matrix and laser wavelength selection. The relationship between matrix optical cross-section and wavelength-dependant threshold fluence, fluence of maximum ion yield, and R, a new descriptor for the change in ion intensity with fluence, are described. A matrix cross-section of 1.3 × 10-17 cm-2 was identified as a potential minimum for desorption/ionization of analytes.

Matrix Optical Absorption in UV-MALDI MS.

PubMed

Robinson, Kenneth N; Steven, Rory T; Bunch, Josephine

2018-03-01

In ultraviolet matrix-assisted laser desorption/ionization mass spectrometry (UV-MALDI MS) matrix compound optical absorption governs the uptake of laser energy, which in turn has a strong influence on experimental results. Despite this, quantitative absorption measurements are lacking for most matrix compounds. Furthermore, despite the use of UV-MALDI MS to detect a vast range of compounds, investigations into the effects of laser energy have been primarily restricted to single classes of analytes. We report the absolute solid state absorption spectra of the matrix compounds α-cyano-4-hydroxycinnamic acid (CHCA), para-nitroaniline (PNA), 2-mercaptobenzothiazole (MBT), 2,5-dihydroxybenzoic acid (2,5-DHB), and 2,4,6-trihydroxyacetophenone (THAP). The desorption/ionization characteristics of these matrix compounds with respect to laser fluence was investigated using mixed systems of matrix with either angiotensin II, PC(34:1) lipid standard, or haloperidol, acting as representatives for typical classes of analyte encountered in UV-MALDI MS. The first absolute solid phase spectra for PNA, MBT, and THAP are reported; additionally, inconsistencies between previously published spectra for CHCA are resolved. In light of these findings, suggestions are made for experimental optimization with regards to matrix and laser wavelength selection. The relationship between matrix optical cross-section and wavelength-dependant threshold fluence, fluence of maximum ion yield, and R, a new descriptor for the change in ion intensity with fluence, are described. A matrix cross-section of 1.3 × 10 -17 cm -2 was identified as a potential minimum for desorption/ionization of analytes. Graphical Abstract ᅟ.

Effects of laser fluence non-uniformity on ambient-temperature soot measurements using the auto-compensating laser-induced incandescence technique

NASA Astrophysics Data System (ADS)

Liu, Fengshan; Rogak, Steven; Snelling, David R.; Saffaripour, Meghdad; Thomson, Kevin A.; Smallwood, Gregory J.

2016-11-01

Multimode pulsed Nd:YAG lasers are commonly used in auto-compensating laser-induced incandescence (AC-LII) measurements of soot in flames and engine exhaust as well as black carbon in the atmosphere. Such lasers possess a certain degree of fluence non-uniformity across the laser beam even with the use of beam shaping optics. Recent research showed that the measured volume fraction of ambient-temperature soot using AC-LII increases significantly, by about a factor of 5-8, with increasing the laser fluence in the low-fluence regime from a very low fluence to a relatively high fluence of near sublimation. The causes of this so-called soot volume fraction anomaly are currently not understood. The effects of laser fluence non-uniformity on the measured soot volume fraction using AC-LII were investigated. Three sets of LII experiments were conducted in the exhaust of a MiniCAST soot generator under conditions of high elemental carbon using Nd:YAG lasers operated at 1064 nm. The laser beams were shaped and relay imaged to achieve a relatively uniform fluence distribution in the measurement volume. To further homogenize the laser fluence, one set of LII experiments was conducted by using a diffractive optical element. The measured soot volume fractions in all three sets of LII experiments increase strongly with increasing the laser fluence before a peak value is reached and then start to decrease at higher fluences. Numerical calculations were conducted using the experimental laser fluence histograms. Laser fluence non-uniformity is found partially responsible for the soot volume fraction anomaly, but is insufficient to explain the degree of soot volume fraction anomaly observed experimentally. Representing the laser fluence variations by a histogram derived from high-resolution images of the laser beam energy profile gives a more accurate definition of inhomogeneity than a simple averaged linear profile across the laser beam.

Isotopic Dependence of GCR Fluence behind Shielding

NASA Technical Reports Server (NTRS)

Cucinotta, Francis A.; Wilson, John W.; Saganti, Premkumar; Kim, Myung-Hee Y.; Cleghorn, Timothy; Zeitlin, Cary; Tripathi, Ram K.

2006-01-01

In this paper we consider the effects of the isotopic composition of the primary galactic cosmic rays (GCR), nuclear fragmentation cross-sections, and isotopic-grid on the solution to transport models used for shielding studies. Satellite measurements are used to describe the isotopic composition of the GCR. For the nuclear interaction data-base and transport solution, we use the quantum multiple-scattering theory of nuclear fragmentation (QMSFRG) and high-charge and energy (HZETRN) transport code, respectively. The QMSFRG model is shown to accurately describe existing fragmentation data including proper description of the odd-even effects as function of the iso-spin dependence on the projectile nucleus. The principle finding of this study is that large errors (+/-100%) will occur in the mass-fluence spectra when comparing transport models that use a complete isotopic-grid (approx.170 ions) to ones that use a reduced isotopic-grid, for example the 59 ion-grid used in the HZETRN code in the past, however less significant errors (<+/-20%) occur in the elemental-fluence spectra. Because a complete isotopic-grid is readily handled on small computer workstations and is needed for several applications studying GCR propagation and scattering, it is recommended that they be used for future GCR studies.

Investigation of microstructure and properties of ultrathin graded ZrNx self-assembled diffusion barrier in deep nano-vias prepared by plasma ion immersion implantation

NASA Astrophysics Data System (ADS)

Zou, Jianxiong; Liu, Bo; Lin, Liwei; Lu, Yuanfu; Dong, Yuming; Jiao, Guohua; Ma, Fei; Li, Qiran

2018-01-01

Ultrathin graded ZrNx self-assembled diffusion barriers with controllable stoichiometry was prepared in Cu/p-SiOC:H interfaces by plasma immersion ion implantation (PIII) with dynamic regulation of implantation fluence. The fundamental relationship between the implantation fluence of N+ and the stoichiometry and thereby the electrical properties of the ZrNx barrier was established. The optimized fluence of a graded ZrN thin film with gradually decreased Zr valence was obtained with the best electrical performance as well. The Cu/p-SiOC:H integration is thermally stable up to 500 °C due to the synergistic effect of Cu3Ge and ZrNx layers. Accordingly, the PIII process was verified in a 100-nm-thick Cu dual-damascene interconnect, in which the ZrNx diffusion barrier of 1 nm thick was successfully self-assembled on the sidewall without barrier layer on the via bottom. In this case, the via resistance was reduced by approximately 50% in comparison with Ta/TaN barrier. Considering the results in this study, ultrathin ZrNx conformal diffusion barrier can be adopted in the sub-14 nm technology node.

Improving the thermal stability and electrical parameters of a liquid crystalline material 4-n-(nonyloxy) benzoic acid by using Li ion beam irradiation

NASA Astrophysics Data System (ADS)

Kumar, Satendra; Verma, Rohit; Dwivedi, Aanchal; Dhar, R.; Tripathi, Ambuj

2018-05-01

Li ion beam irradiation studies on a liquid crystalline material 4-n-(nonyloxy) benzoic acid (NOBA) have been carried out. The material has phase sequence of I-N-SmC-Cr. Thermodynamic studies demonstrate that an irradiation fluence of 1×1013 ions-cm-2 results in the increased thermal stability of the smectic C (SmC) phase of the material. Dielectric measurements illustrate that the transverse component of the dielectric permittivity and hence the dielectric anisotropy of the material in the nematic (N) and SmC phases are increased as compared to those of the pure material due to irradiation. UV-Visible spectrum of the irradiated material shows an additional peak along with the peak of the pure material. The observed change in the thermodynamic and electrical parameters is attributed to the conversion of some of the dimers of NOBA to monomers of NOBA due to irradiation.

Phase stability in thermally-aged CASS CF8 under heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Meimei; Miller, Michael K.; Chen, Wei-Ying

2015-07-01

The stability of the microstructure of a cast austenitic stainless steel (CASS), before and after heavy ion irradiation, was investigated by atom probe tomography (APT). A CF8 ferrite-austenite duplex alloy was thermally aged at 400 degrees C for 10,000 h. After this treatment, APT revealed nanometer-sized G-phase precipitates and Fe-rich alpha and Cr-enriched alpha' phase separated regions in the ferrite. The thermally-aged CF8 specimen was irradiated with 1 MeV Kr ions to a fluence of 1.88 x 10(19) ions/m(2) at 400 degrees C. After irradiation, APT analysis revealed a strong spatial/dose dependence of the G-phase precipitates and the alpha-alpha' spinodalmore » decomposition in the ferrite. For the G-phase precipitates, the number density increased and the mean size decreased with increasing dose, and the particle size distribution changed considerably under irradiation. The inverse coarsening process can be described by recoil resolution. The amplitude of the alpha-alpha' spinodal decomposition in the ferrite was apparently reduced after heavy ion irradiation. (C) 2015 Elsevier B.V. All rights reserved« less

Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

NASA Astrophysics Data System (ADS)

Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

2018-05-01

The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation.

PubMed

Jayalakshmi, G; Saravanan, K; Panigrahi, B K; Sundaravel, B; Gupta, Mukul

2018-05-04

The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar + -ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2 -hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar + -ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

Gallium nitride nanoneedles grown in extremely non-equilibrium nitrogen plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangla, O., E-mail: onkarmangla@gmail.com; Physics Department, Hindu College, University of Delhi, Delhi, 110007; Roy, S.

2016-05-23

In the present work, gallium nitride (GaN) nanoneedles are grown on quartz substrates using the high fluence ions of GaN produced by hot, dense and extremely non-equlibrium nitrogen plasma in a modified dense plasma focus device. The formation of nanoneedles is obtained from the scanning electron microscopy with mean size of the head of nanoneedles ~ 70 nm. The nanoneedles are found to be poly-crystalline when studied structurally through the X-ray diffraction. The optical properties of nanoneedles studied using absorption spectra which show more absorption for nanoneedles depsoited one shot of ions irradiation. In addition, the band gap of nanoneedles ismore » found to be increased as compared to bulk GaN. The obtained nanoneedles with increased band gap have potential applications in detector systems.« less

A TPS kernel for calculating survival vs. depth: distributions in a carbon radiotherapy beam, based on Katz's cellular Track Structure Theory.

PubMed

Waligórski, M P R; Grzanka, L; Korcyl, M; Olko, P

2015-09-01

An algorithm was developed of a treatment planning system (TPS) kernel for carbon radiotherapy in which Katz's Track Structure Theory of cellular survival (TST) is applied as its radiobiology component. The physical beam model is based on available tabularised data, prepared by Monte Carlo simulations of a set of pristine carbon beams of different input energies. An optimisation tool developed for this purpose is used to find the composition of pristine carbon beams of input energies and fluences which delivers a pre-selected depth-dose distribution profile over the spread-out Bragg peak (SOBP) region. Using an extrapolation algorithm, energy-fluence spectra of the primary carbon ions and of all their secondary fragments are obtained over regular steps of beam depths. To obtain survival vs. depth distributions, the TST calculation is applied to the energy-fluence spectra of the mixed field of primary ions and of their secondary products at the given beam depths. Katz's TST offers a unique analytical and quantitative prediction of cell survival in such mixed ion fields. By optimising the pristine beam composition to a published depth-dose profile over the SOBP region of a carbon beam and using TST model parameters representing the survival of CHO (Chinese Hamster Ovary) cells in vitro, it was possible to satisfactorily reproduce a published data set of CHO cell survival vs. depth measurements after carbon ion irradiation. The authors also show by a TST calculation that 'biological dose' is neither linear nor additive. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Variation in the electrical properties of ion beam irradiated cadmium selenate nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, R. P., E-mail: chauhanrpc@gmail.com; Narula, Chetna; Panchal, Suresh

The key feature of nanowires consists in the pronounced change in properties induced by the low dimensionality and high surface to volume ratio. The study of electrical transport properties of nanowires is important for electronic device applications. Energetic ions create changes, which may be structural or chemical, in a material along their track and these changes might alter the material’s properties. The demand of the modern technology is to understand the effect of radiation on the different properties of the material for its further applications. The present study is on the high-energy Nickel ion beam (160 MeV Ni{sup +12}) induced modificationsmore » in the electrical and structural properties of the cadmium selenate nanowires. An enhancement in the electrical conductivity of irradiated wires was observed as the ion fluence was increased especially in the forward I–V characteristics. The creation of defects by ion irradiation and the synergy of the ions during their passage in the sample with the intrinsic charge carriers may be responsible for the variation in the transport properties of the irradiated nanowires.« less

Kinetic and Potential Sputtering of Lunar Regolith: Contribution of Solar-Wind Heavy Ions

NASA Technical Reports Server (NTRS)

Meyer, F. W.; Harris, P. R.; Meyer, H. M., III; Hijiazi, H.; Barghouty, A. F.

2013-01-01

Sputtering of lunar regolith by protons as well as solar-wind heavy ions is considered. From preliminary measurements of H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A AGGL lunar regolith simulant at solar wind velocities, and TRIM simulations of kinetic sputtering yields, the relative contributions of kinetic and potential sputtering contributions are estimated. An 80-fold enhancement of oxygen sputtering by Ar+ over same-velocity H+, and an additional x2 increase for Ar+9 over same-velocity Ar+ was measured. This enhancement persisted to the maximum fluences investigated is approximately 1016/cm (exp2). Modeling studies including the enhanced oxygen ejection by potential sputtering due to the minority heavy ion multicharged ion solar wind component, and the kinetic sputtering contribution of all solar wind constituents, as determined from TRIM sputtering simulations, indicate an overall 35% reduction of near-surface oxygen abundance. XPS analyses of simulant samples exposed to singly and multicharged Ar ions show the characteristic signature of reduced (metallic) Fe, consistent with the preferential ejection of oxygen atoms that can occur in potential sputtering of some metal oxides.

Helium interaction with vacancy-type defects created in silicon carbide single crystal

NASA Astrophysics Data System (ADS)

Linez, F.; Gilabert, E.; Debelle, A.; Desgardin, P.; Barthe, M.-F.

2013-05-01

Generation of He bubbles or cavities in silicon carbide is an important issue for the use of this material in nuclear and electronic applications. To understand the mechanisms prior to the growth of these structures, an atomic-scale study has been conducted. 6H-SiC single crystals have been implanted with 50 keV-He ions at 2 × 1014 and 1015 cm-2 and successively annealed at various temperatures from 150 to 1400 °C. After each annealing, the defect distributions in the samples have been probed by positron annihilation spectroscopy. Four main evolution stages have been evidenced for the two investigated implantation fluences: at (1) 400 °C for both fluences, (2) at 850 °C for the low fluence and 950 °C for the high one, (3) at 950 °C for the low fluence and 1050 °C for the high one and (4) at 1300 °C for both fluences. The perfect correlation between the positron annihilation spectroscopy and the thermodesorption measurements has highlighted the He involvement in the first two stages corresponding respectively to its trapping by irradiation-induced divacancies and the detrapping from various vacancy-type defects generated by agglomeration processes.

Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al2O3 single crystal implanted with Mg ions

NASA Astrophysics Data System (ADS)

Tardío, M.; Egaña, A.; Ramírez, R.; Muñoz-Santiuste, J. E.; Alves, E.

2016-07-01

The electrical conductivity in α-Al2O3 single crystals implanted with Mg ions in two different crystalline orientations, parallel and perpendicular to c axis, was investigated. The samples were implanted at room temperature with energies of 50 and 100 keV and fluences of 1 × 1015, 5 × 1015 and 5 × 1016 ions/cm2. Optical characterization reveals slight differences in the absorption bands at 6.0 and 4.2 eV, attributed to F type centers and Mie scattering from Mg precipitates, respectively. DC electrical measurements using the four and two-point probe methods, between 295 and 490 K, were used to characterize the electrical conductivity of the implanted area (Meshakim and Tanabe, 2001). Measurements in this temperature range indicate that: (1) the electrical conductivity is thermally activated independently of crystallographic orientation, (2) resistance values in the implanted region decrease with fluence levels, and (3) the I-V characteristic of electrical contacts in samples with perpendicular c axis orientation is clearly ohmic, whereas contacts are blocking in samples with parallel c axis. When thin layers are sequentially removed from the implanted region by immersing the sample in a hot solution of nitric and fluorhydric acids the electrical resistance increases until reaching the values of non-implanted crystal (Jheeta et al., 2006). We conclude that the enhancement in conductivity observed in the implanted regions is related to the intrinsic defects created by the implantation rather than to the implanted Mg ions (da Silva et al., 2002; Tardío et al., 2001; Tardío et al., 2008).

Thick optical waveguides in lithium niobate induced by swift heavy ions (approximately 10 MeV/amu) at ultralow fluences.

PubMed

Olivares, José; Crespillo, Miguel L; Caballero-Calero, Olga; Ynsa, María D; García-Cabañes, Angel; Toulemonde, Marcel; Trautmann, Christina; Agulló-López, Fernando

2009-12-21

Heavy mass ions, Kr and Xe, having energies in the approximately 10 MeV/amu range have been used to produce thick planar optical waveguides at the surface of lithium niobate (LiNbO3). The waveguides have a thickness of 40-50 micrometers, depending on ion energy and fluence, smooth profiles and refractive index jumps up to 0.04 (lambda = 633 nm). They propagate ordinary and extraordinary modes with low losses keeping a high nonlinear optical response (SHG) that makes them useful for many applications. Complementary RBS/C data provide consistent values for the partial amorphization and refractive index change at the surface. The proposed method is based on ion-induced damage caused by electronic excitation and essentially differs from the usual implantation technique using light ions (H and He) of MeV energies. It implies the generation of a buried low-index layer (acting as optical barrier), made up of amorphous nanotracks embedded into the crystalline lithium niobate crystal. An effective dielectric medium approach is developed to describe the index profiles of the waveguides. This first test demonstration could be extended to other crystalline materials and could be of great usefulness for mid-infrared applications.

Monte Carlo transport model comparison with 1A GeV accelerated iron experiment: heavy-ion shielding evaluation of NASA space flight-crew foodstuff

NASA Technical Reports Server (NTRS)

Stephens, D. L. Jr; Townsend, L. W.; Miller, J.; Zeitlin, C.; Heilbronn, L.

2002-01-01

Deep-space manned flight as a reality depends on a viable solution to the radiation problem. Both acute and chronic radiation health threats are known to exist, with solar particle events as an example of the former and galactic cosmic rays (GCR) of the latter. In this experiment Iron ions of 1A GeV are used to simulate GCR and to determine the secondary radiation field created as the GCR-like particles interact with a thick target. A NASA prepared food pantry locker was subjected to the iron beam and the secondary fluence recorded. A modified version of the Monte Carlo heavy ion transport code developed by Zeitlin at LBNL is compared with experimental fluence. The foodstuff is modeled as mixed nuts as defined by the 71st edition of the Chemical Rubber Company (CRC) Handbook of Physics and Chemistry. The results indicate a good agreement between the experimental data and the model. The agreement between model and experiment is determined using a linear fit to ordered pairs of data. The intercept is forced to zero. The slope fit is 0.825 and the R2 value is 0.429 over the resolved fluence region. The removal of an outlier, Z=14, gives values of 0.888 and 0.705 for slope and R2 respectively. c2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Monte Carlo transport model comparison with 1A GeV accelerated iron experiment: heavy-ion shielding evaluation of NASA space flight-crew foodstuff.

PubMed

Stephens, D L; Townsend, L W; Miller, J; Zeitlin, C; Heilbronn, L

2002-01-01

Deep-space manned flight as a reality depends on a viable solution to the radiation problem. Both acute and chronic radiation health threats are known to exist, with solar particle events as an example of the former and galactic cosmic rays (GCR) of the latter. In this experiment Iron ions of 1A GeV are used to simulate GCR and to determine the secondary radiation field created as the GCR-like particles interact with a thick target. A NASA prepared food pantry locker was subjected to the iron beam and the secondary fluence recorded. A modified version of the Monte Carlo heavy ion transport code developed by Zeitlin at LBNL is compared with experimental fluence. The foodstuff is modeled as mixed nuts as defined by the 71st edition of the Chemical Rubber Company (CRC) Handbook of Physics and Chemistry. The results indicate a good agreement between the experimental data and the model. The agreement between model and experiment is determined using a linear fit to ordered pairs of data. The intercept is forced to zero. The slope fit is 0.825 and the R2 value is 0.429 over the resolved fluence region. The removal of an outlier, Z=14, gives values of 0.888 and 0.705 for slope and R2 respectively. c2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment

DOEpatents

Swain, J.E.; Stokowski, S.E.; Milam, D.; Kennedy, G.C.; Rainer, F.

1982-07-07

The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.

Band gap engineering by swift heavy ions irradiation induced amorphous nano-channels in LiNbO3

DOE PAGES

Sachan, Ritesh; Pakarinen, Olli H.; Liu, Peng; ...

2015-04-01

The irradiation of lithium niobate with swift heavy ions results in the creation of amorphous nano-sized channels along the incident ion path. These nano-channels are on the order of a hundred microns in length and could be useful for photonic applications. However, there are two major challenges in these nano-channels characterization; (i) it is difficult to investigate the structural characteristics of these nano-channels due to their very long length, and (ii) the analytical electron microscopic analysis of individual ion track is complicated due to electron beam sensitive nature of lithium niobate. Here, we report the first high resolution microscopic characterizationmore » of these amorphous nano-channels, widely known as ion-tracks, by direct imaging them at different depths in the material, and subsequently correlating the key characteristics with Se of ions. Energetic Kr ions ( 84Kr 22 with 1.98 GeV energy) are used to irradiate single crystal lithium niobate with a fluence of 2x10 10 ions/cm 2, which results in the formation of individual ion tracks with a penetration depth of ~180 μm. Along the ion path, electron energy loss of the ions, which is responsible for creating the ion tracks, increases with depth under these conditions in LiNbO 3, resulting in increases in track diameter of a factor of ~2 with depth. This diameter increase with electronic stopping power is consistent with predictions of the inelastic thermal spike model. We also show a new method to measure the band gap in individual ion track by using electron energy-loss spectroscopy.« less

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

PubMed Central

Rzeznik, Lukasz; Fleming, Yves; Wirtz, Tom

2016-01-01

Summary Secondary ion mass spectrometry (SIMS) on the helium ion microscope (HIM) promises higher lateral resolution than on classical SIMS instruments. However, full advantage of this new technique can only be obtained when the interaction of He+ or Ne+ primary ions with the sample is fully controlled. In this work we investigate how He+ and Ne+ bombardment influences roughness formation and preferential sputtering for polymer samples and how they compare to Ar+ primary ions used in classical SIMS by combining experimental techniques with Molecular Dynamics (MD) simulations and SD_TRIM_SP modelling. The results show that diffusion coefficients for He, Ne and Ar in polymers are sufficiently high to prevent any accumulation of rare gas atoms in the polymers which could lead to some swelling and bubble formation. Roughness formation was also not observed. Preferential sputtering is more of a problem, with enrichment of carbon up to surface concentrations above 80%. In general, the preferential sputtering is largely depending on the primary ion species and the impact energies. For He+ bombardment, it is more of an issue for low keV impact energies and for the heavier primary ion species the preferential sputtering is sample dependent. For He+ steady state conditions are reached for fluences much higher than 1018 ions/cm2. For Ne+ and Ar+, the transient regime extends up to fluences of 1017–1018 ions/cm2. Hence, preferential sputtering needs to be taken into account when interpreting images recorded under He+ or Ne+ bombardment on the HIM. PMID:27547629

DOE Office of Scientific and Technical Information (OSTI.GOV)

Magallanes, L., E-mail: lorena.magallanes@med.uni-heidelberg.de; Rinaldi, I., E-mail: ilaria.rinaldi@med.uni-heidelberg.de; Brons, S., E-mail: stephan.brons@med.uni-heidelberg.de

External beam radiotherapy techniques have the common aim to maximize the radiation dose to the target while sparing the surrounding healthy tissues. The inverted and finite depth-dose profile of ion beams (Bragg peak) allows for precise dose delivery and conformai dose distribution. Furthermore, increased radiobiological effectiveness of ions enhances the capability to battle radioresistant tumors. Ion beam therapy requires a precise determination of the ion range, which is particularly sensitive to range uncertainties. Therefore, novel imaging techniques are currently investigated as a tool to improve the quality of ion beam treatments. Approaches already clinically available or under development are basedmore » on the detection of secondary particles emitted as a result of nuclear reactions (e.g., positron-annihilation or prompt gammas, charged particles) or transmitted high energy primary ion beams. Transmission imaging techniques make use of the beams exiting the patient, which have higher initial energy and lower fluence than the therapeutic ones. At the Heidelberg Ion Beam Therapy Center, actively scanned energetic proton and carbon ion beams provide an ideal environment for the investigation of ion-based radiography and tomography. This contribution presents the rationale of ion beam therapy, focusing on the role of ion-based transmission imaging methods towards the reduction of range uncertainties and potential improvement of treatment planning.« less

Accelerator-Based Studies of Heavy Ion Interactions Relevant to Space Biomedicine

NASA Technical Reports Server (NTRS)

Miller, J.; Heilbronn, L.; Zeitlin, C.

1999-01-01

Evaluation of the effects of space radiation on the crews of long duration space missions must take into account the interactions of high energy atomic nuclei in spacecraft and planetary habitat shielding and in the bodies of the astronauts. These heavy ions (i.e. heavier than hydrogen), while relatively small in number compared to the total galactic cosmic ray (GCR) charged particle flux, can produce disproportionately large effects by virtue of their high local energy deposition: a single traversal by a heavy charged particle can kill or, what may be worse, severely damage a cell. Research into the pertinent physics and biology of heavy ion interactions has consequently been assigned a high priority in a recent report by a task group of the National Research Council. Fragmentation of the incident heavy ions in shielding or in the human body will modify an initially well known radiation field and thereby complicate both spacecraft shielding design and the evaluation of potential radiation hazards. Since it is impractical to empirically test the radiation transport properties of each possible shielding material and configuration, a great deal of effort is going into the development of models of charged particle fragmentation and transport. Accurate nuclear fragmentation cross sections (probabilities), either in the form of measurements with thin targets or theoretical calculations, are needed for input to the transport models, and fluence measurements (numbers of fragments produced by interactions in thick targets) are needed both to validate the models and to test specific shielding materials and designs. Fluence data are also needed to characterize the incident radiation field in accelerator radiobiology experiments. For a number of years, nuclear fragmentation measurements at GCR-like energies have been carried out at heavy ion accelerators including the LBL Bevalac, Saturne (France), the Synchrophasotron and Nuklotron (Dubna, Russia), SIS-18 (GSI, Germany), the Alternating Gradient Synchrotron at Brookhaven National Laboratory (BNL AGS) and the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan. Until fairly recently most of these experiments were done to investigate fundamental problems in nuclear physics, but with the increasing interest in heavy charged particles on the part of the space flight, radiobiology and radiotherapy communities, an increasing number of experiments are being directed at these areas. Some of these measurements are discussed in references therein. Over the past several years, our group has taken cross section and fluence data at the AGS and HIMAC for several incident beams with nuclear charge, Z, between 6 and 26 at energies between 290 and 1050 MeV/nucleon. Iron (Z = 26) has been studied most extensively, since it is the heaviest ion present in significant numbers in the GCR. Targets have included tissue-equivalent and proposed shielding materials, as well as a variety of elemental targets for cross section measurements. Most of the data were taken along the beam axis, but measurements have been made off-axis, as well. Here we present selected data and briefly discuss some implications for spacecraft and planetary habitat design.

Effect of elastic collisions and electronic excitation on lattice structure of NiTi bulk intermetallic compound irradiated with energetic ions

NASA Astrophysics Data System (ADS)

Ochi, M.; Kojima, H.; Hori, F.; Kaneno, Y.; Semboshi, S.; Saitoh, Y.; Okamoto, Y.; Ishikawa, N.; Iwase, A.

2018-07-01

NiTi bulk intermetallic compound with the B19‧ structure was irradiated with 1 MeV He, 5 MeV Al, 16 MeV Au and 200 MeV Xe ions, and the change in lattice structure near the surface by the ion bombardment was investigated by using the grazing incidence X-ray diffraction (GIXD) and the extended X-ray absorption fine structure (EXAFS). The lattice structure transformation by the irradiation strongly depends on ion species and/or energies. For the 1 MeV He irradiation, the lattice structure changed from B19‧ to the A2 structure, but did not show an amorphization even after the high fluence irradiation. For the 5 MeV Al irradiation, the samples are partially amorphized. For the 16 MeV Au irradiation, the lattice structure of the NiTi samples changed nearly completely from the B19‧ structure to the amorphous state via the A2 structure. The value of dpa (displacement per atom) which is needed for the amorphization is, however, much smaller than the case of the Al ion irradiation. For the 200 MeV Xe ion irradiation, the lattice structure completely changed to the A2 structure even by a small ion fluence. The dependence of the lattice structure transformation on elastic collisions (dpa), the spectrum of the primary knock-on (PKA) atoms and the density of energy deposited through electronic excitation was discussed.

Valine radiolysis by MeV ions

NASA Astrophysics Data System (ADS)

Da Silveira, Enio

2016-07-01

Valine, (CH3)2 CHCH (NH2) COOH, is a protein amino acid that has been identified in extraterrestrial environments and in the Murchison meteorite [1]. The knowledge of half-lives of small organic molecules under ionizing radiation is important for the setup of models describing the spread out of prebiotics across the Solar System or the Galaxy. We have investigated typical effects of MeV cosmic ray ions on prebiotic molecules in laboratory by impinging ions produced by the PUC-Rio Van de Graaff accelerator. Pure valine films, deposited by evaporation on KBr substrates, were irradiated by H ^{+}, He ^{+} and N ^{+} ion beams, from 0.5 to 1.5 MeV and up to a fluence of 10 ^{15} projectiles/cm ^{2}. The sample temperature was varied from 10 K to 300 K. The irradiation was interrupted several times for Mid-FTIR analysis of the sample. The main findings are: 1- The column density of the valine decreases exponentially with fluence. 2- In some cases, a second exponential appears in the beginning of irradiation; this feature has been attributed to sample compaction by the ion beam [2]. 3- Destruction cross sections of valine are in the 10 ^{-15} cm ^{2} range, while compaction cross sections are in the 10 ^{-14} cm ^{2} range. 4- Destruction cross section increases with the stopping power of the beam and also with the sample temperature. 5- Surprisingly, during the radiolysis of valine, just CO _{2} is seen by as a daughter molecule formed in the bulk. 6- After long beam fluence, also a CO peak appears in the infrared spectrum; this species is however interpreted as a fragment of the formed CO2 molecules. 7- Considering the flux ratio between laboratory experiments and actual galactic cosmic rays, half-life of valine is predicted for ISM conditions [3]. This work on pure valine is the first measurement of a series. New experiments are planned for determining cross sections of valine dissolved in H _{2}O or CO _{2}, inspired by the study performed for glycine [4]. [1] P. Ehrenfreund and S. B. Charnley, Annu. Rev. Astron. Astrophys. 2000. 38:427. [2] C. Mejía et al., Icarus 250 (2015) 222. [3] D. P. P. Andrade et al., Mon. Not. R. Astron. Soc. 430 (2013) 787. [4] P. A. Gerakines and R. L. Hudson, Icarus 252 (2015) 466. Acknowledgments. The agencies CNPq (INEspaço) and FAPERJ are acknowledged for partial support to this work.

Fluorine-doping in titanium dioxide by ion implantation technique

NASA Astrophysics Data System (ADS)

Yamaki, T.; Umebayashi, T.; Sumita, T.; Yamamoto, S.; Maekawa, M.; Kawasuso, A.; Itoh, H.

2003-05-01

We implanted 200 keV F + in single crystalline titanium dioxide (TiO 2) rutile at a nominal fluence of 1 × 10 16 to 1 × 10 17 ions cm -2 and then thermally annealed the implanted sample in air. The radiation damage and its recovery process during the annealing were analyzed by Rutherford backscattering spectrometry in channeling geometry and variable-energy positron annihilation spectroscopy. The lattice disorder was completely recovered at 1200 °C by the migration of point defects to the surface. According to secondary ion mass spectrometry analysis, the F depth profile was shifted to a shallower region along with the damage recovery and this resulted in the formation of an F-doped layer where the impurity concentration steadily increased toward the surface. The F doping proved to provide a modification to the conduction-band edge of TiO 2, as assessed by theoretical band calculations.

Probing electron density across Ar{sup +} irradiation-induced self-organized TiO{sub 2−x} nanochannels for memory application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barman, A.; Saini, C. P.; Ghosh, S. K.

2016-06-13

The variation of electron density in TiO{sub 2−x} nanochannels, exhibiting resistive switching phenomenon, produced by Ar{sup +} ion-irradiation at the threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO{sub 2−x} nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO{sub 2−x}/Pt-basedmore » memory devices via OV migration.« less

Synthesis of Ag metallic nanoparticles by 120 keV Ag- ion implantation in TiO2 matrix

NASA Astrophysics Data System (ADS)

Sharma, Himanshu; Singhal, Rahul

2017-12-01

TiO2 thin film synthesized by the RF sputtering method has been implanted by 120 keV Ag- ion with different doses (3 × 1014, 1 × 1015, 3 × 1015, 1 × 1016 and 3 × 1016 ions/cm2). Further, these were characterized by Rutherford back Scattering, XRD, X-ray photoelectron spectroscopy (XPS), UV-visible and fluorescence spectroscopy. Here we reported that after implantation, localized surface Plasmon resonance has been observed for the fluence 3 × 1016 ions/cm2, which was due to the formation of silver nanoparticles. Ag is in metallic form in the matrix of TiO2, which is very interestingly as oxidation of Ag was reported after implantation. Also, we have observed the interaction between nanoparticles of Ag and TiO2, which results in an increasing intensity in lower charge states (Ti3+) of Ti. This interaction is supported by XPS and fluorescence spectroscopy, which can help improve photo catalysis and antibacterial properties.

Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian

2016-08-09

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantationmore » process.« less

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge.

PubMed

Lim, Lian-Kuang; Yap, Seong-Ling; Bradley, D A

2018-01-01

The plasma focus device discussed herein is a Z-pinch pulsed-plasma arrangement. In this, the plasma is heated and compressed into a cylindrical column, producing a typical density of > 1025 particles/m3 and a temperature of (1-3) × 107 oC. The plasma focus has been widely investigated as a radiation source, including as ion-beams, electron-beams and as a source of x-ray and neutron production, providing considerable scope for use in a variety of technological situations. Thus said, the nature of the radiation emission depends on the dynamics of the plasma pinch. In this study of the characteristics of deuteron-beam emission, in terms of energy, fluence and angular distribution were analyzed. The 2.7 kJ plasma focus discharge has been made to operate at a pressure of less than 1 mbar rather than at its more conventional operating pressure of a few mbar. Faraday cup were used to determine deuteron-beam energy and deuteron-beam fluence per shot while CR-39 solid-state nuclear track detectors were employed in studying the angular distribution of deuteron emission. Beam energy and deuteron-beam fluence per shot have been found to be pressure dependent. The largest value of average deuteron energy measured for present conditions was found to be (52 ± 7) keV, while the deuteron-beam fluence per shot was of the order of 1015 ions/m2 when operated at a pressure of 0.2 mbar. The deuteron-beam emission is in the forward direction and is observed to be highly anisotropic.

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge

PubMed Central

Bradley, D. A.

2018-01-01

The plasma focus device discussed herein is a Z-pinch pulsed-plasma arrangement. In this, the plasma is heated and compressed into a cylindrical column, producing a typical density of > 1025 particles/m3 and a temperature of (1–3) × 107 oC. The plasma focus has been widely investigated as a radiation source, including as ion-beams, electron-beams and as a source of x-ray and neutron production, providing considerable scope for use in a variety of technological situations. Thus said, the nature of the radiation emission depends on the dynamics of the plasma pinch. In this study of the characteristics of deuteron-beam emission, in terms of energy, fluence and angular distribution were analyzed. The 2.7 kJ plasma focus discharge has been made to operate at a pressure of less than 1 mbar rather than at its more conventional operating pressure of a few mbar. Faraday cup were used to determine deuteron-beam energy and deuteron-beam fluence per shot while CR-39 solid-state nuclear track detectors were employed in studying the angular distribution of deuteron emission. Beam energy and deuteron-beam fluence per shot have been found to be pressure dependent. The largest value of average deuteron energy measured for present conditions was found to be (52 ± 7) keV, while the deuteron-beam fluence per shot was of the order of 1015 ions/m2 when operated at a pressure of 0.2 mbar. The deuteron-beam emission is in the forward direction and is observed to be highly anisotropic. PMID:29309425

Impact of the track structure of heavy charged particles on cytogenetic damage in human blood lymphocytes

NASA Astrophysics Data System (ADS)

Lee, Ryonfa; Nasonova, Elena; Sommer, Sylwetster; Hartel, Carola; Durante, Marco; Ritter, Sylvia

In space, astronauts are unavoidably exposed to charged particles from protons to irons. For a better estimate of the health risks of astronauts, further knowledge on the biological effects of charged particles, in particular the induction of cytogenetic damage is required. One im-portant factor that determines the biological response is the track structure of particles, i.e. their microscopic dose deposition in cells. The aim of the present study was to assess the influence of track structure of heavy ions on the yield and the quality of cytogenetic damage in human peripheral blood lymphocytes representing normal tissue. Cells were irradiated with 9.5 MeV/u C-ions or 990 MeV/u Fe-ions which have a comparable LET (175 keV/µm and 155 keV/µm, respectively) but a different track radius (2.3 and 6200 µm, respectively). When aberrations were analyzed in first cycle metaphases collected at different post-irradiation times (48-84 h) following fluorescence plus Giemsa staining, an increase in the aberration yield with sampling time was observed for both radiation qualities reflecting a damage dependent cell cycle progression delay to mitosis. The pronounced differences in the aberration frequency per cell are attributable to the stochastic distribution of particle traversals per cell nucleus (radius: 2.8 µm). Following C-ion exposure we found a high fraction of non-aberrant cells in samples collected at 48 h which represent cells not directly hit by a particle and slightly damaged cells that successfully repaired the induced lesions. In addition, at higher C-ion fluences the aberra-tion yield saturated, suggesting that a fraction of lymphocytes receiving multiple particle hits is not able to reach mitosis. On the other hand, at 48 h after Fe-ion exposure the proportion of non-aberrant cells is lower than after C-ion irradiation clearly reflecting the track structure of high energy particles (i.e. more homogeneous dose deposition compared to low energy C-ions). Furthermore, the aberration yield increased linearly with Fe-ion fluence. When aberrations were analyzed in first cycle G2 -PCC cells to account for the prolonged G2 arrest of damaged cells, the same trend was detected. However, the increase in the aberration yield with time and the saturation effect were less pronounced compared to metaphase samples. Altogether, these data show that the aberration analysis with multiple samplings is necessary for a reliable estimate of cytogenetic damage induced by charged particles. In particular, when damage is measured at one early time-point the effectiveness of low energy particles will be considerably underestimated. When the aberration spectrum induced by low energy C-ions and high en-ergy Fe-ions was compared, we did not find a difference. Preliminary data obtained with the high resolution mFISH-technique confirm this observation. (Work supported by BMBF, Bonn, under contract 02S8497)

Deuterium trapping in tungsten

NASA Astrophysics Data System (ADS)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D irradiation. Deuterium trapping could be characterized by three regimes: (i) enhanced D retention in a graphitic film formed by the C+ irradiation; (ii) decreased D retention in a modified tungsten-carbon layer; and (iii) D retention in pure tungsten.

Magnetic phase composition of strontium titanate implanted with iron ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dulov, E.N., E-mail: evgeny.dulov@ksu.ru; Ivoilov, N.G.; Strebkov, O.A.

2011-12-15

Highlights: Black-Right-Pointing-Pointer The origin of RT-ferromagnetism in iron implanted strontium titanate. Black-Right-Pointing-Pointer Metallic iron nanoclusters form during implantation and define magnetic behaviour. Black-Right-Pointing-Pointer Paramagnetic at room temperature iron-substituted strontium titanate identified. -- Abstract: Thin magnetic films were synthesized by means of implantation of iron ions into single-crystalline (1 0 0) substrates of strontium titanate. Depth-selective conversion electron Moessbauer spectroscopy (DCEMS) indicates that origin of the samples magnetism is {alpha}-Fe nanoparticles. Iron-substituted strontium titanate was also identified but with paramagnetic behaviour at room temperature. Surface magneto-optical Kerr effect (SMOKE) confirms that the films reveal superparamagnetism (the low-fluence sample) or ferromagnetism (themore » high-fluence sample), and demonstrate absence of magnetic in-plane anisotropy. These findings highlight iron implanted strontium titanate as a promising candidate for composite multiferroic material and also for gas sensing applications.« less

Ion track etching revisited: I. Correlations between track parameters in aged polymers

NASA Astrophysics Data System (ADS)

Fink, D.; Muñoz H., G.; García A., H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

2018-04-01

Some yet poorly understood problems of etching of pristine and swift heavy ion track-irradiated aged polymers were treated, by applying conductometry across the irradiated foils during etching. The onset times of etchant penetration across pristine foils, and the onset times of the different etched track regimes in irradiated foils were determined for polymers of various proveniences, fluences and ages, as well as their corresponding etching speeds. From the results, correlations of the parameters with each other were deduced. The normalization of these parameters enables one to compare irradiated polymer foils of different origin and treatment with one another. In a number of cases, also polymeric gel formation and swelling occur which influence the track etching behaviour. The polymer degradation during aging influences the track etching parameters, which differ from each other on both sides of the foils. With increasing sample age, these differences increase.

Ion-Implanted Diamond Films and Their Tribological Properties

NASA Technical Reports Server (NTRS)

Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

1993-01-01

This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

Efficient Performance of Electrostatic Spray-Deposited TiO2 Blocking Layers in Dye-Sensitized Solar Cells after Swift Heavy Ion Beam Irradiation.

PubMed

Sudhagar, P; Asokan, K; Jung, June Hyuk; Lee, Yong-Gun; Park, Suil; Kang, Yong Soo

2011-12-01

A compact TiO2 layer (~1.1 μm) prepared by electrostatic spray deposition (ESD) and swift heavy ion beam (SHI) irradiation using oxygen ions onto a fluorinated tin oxide (FTO) conducting substrate showed enhancement of photovoltaic performance in dye-sensitized solar cells (DSSCs). The short circuit current density (Jsc = 12.2 mA cm(-2)) of DSSCs was found to increase significantly when an ESD technique was applied for fabrication of the TiO2 blocking layer, compared to a conventional spin-coated layer (Jsc = 8.9 mA cm(-2)). When SHI irradiation of oxygen ions of fluence 1 × 10(13) ions/cm(2) was carried out on the ESD TiO2, it was found that the energy conversion efficiency improved mainly due to the increase in open circuit voltage of DSSCs. This increased energy conversion efficiency seems to be associated with improved electronic energy transfer by increasing the densification of the blocking layer and improving the adhesion between the blocking layer and the FTO substrate. The adhesion results from instantaneous local melting of the TiO2 particles. An increase in the electron transport from the blocking layer may also retard the electron recombination process due to the oxidized species present in the electrolyte. These findings from novel treatments using ESD and SHI irradiation techniques may provide a new tool to improve the photovoltaic performance of DSSCs.

Efficient Performance of Electrostatic Spray-Deposited TiO2 Blocking Layers in Dye-Sensitized Solar Cells after Swift Heavy Ion Beam Irradiation

PubMed Central

2011-01-01

A compact TiO2 layer (~1.1 μm) prepared by electrostatic spray deposition (ESD) and swift heavy ion beam (SHI) irradiation using oxygen ions onto a fluorinated tin oxide (FTO) conducting substrate showed enhancement of photovoltaic performance in dye-sensitized solar cells (DSSCs). The short circuit current density (Jsc = 12.2 mA cm-2) of DSSCs was found to increase significantly when an ESD technique was applied for fabrication of the TiO2 blocking layer, compared to a conventional spin-coated layer (Jsc = 8.9 mA cm-2). When SHI irradiation of oxygen ions of fluence 1 × 1013 ions/cm2 was carried out on the ESD TiO2, it was found that the energy conversion efficiency improved mainly due to the increase in open circuit voltage of DSSCs. This increased energy conversion efficiency seems to be associated with improved electronic energy transfer by increasing the densification of the blocking layer and improving the adhesion between the blocking layer and the FTO substrate. The adhesion results from instantaneous local melting of the TiO2 particles. An increase in the electron transport from the blocking layer may also retard the electron recombination process due to the oxidized species present in the electrolyte. These findings from novel treatments using ESD and SHI irradiation techniques may provide a new tool to improve the photovoltaic performance of DSSCs. PMID:27502653

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyazgin, Alexander, E-mail: lyazgin@list.ru; Shugurov, Artur, E-mail: shugurov@ispms.tsc.ru; Sergeev, Viktor, E-mail: retc@ispms.tsc.ru

The effect of bombardment of the Ni-B sublayer by Zr ion beams on the surface morphology and tribomechanical properties of Au-Ni coatings was investigated. It was found that the treatment has no significant effect on the surface roughness and grain size of the Au-Ni coatings, while it provides essential reducing of their friction coefficient and improvement of wear resistance. It is shown that increased wear resistance of these coatings was caused by their strain hardening resulted from localization of plastic strain. The optimal Zr fluence were determined that provide the maximum reduction of linear wear of the coatings.

UV excimer laser and low temperature plasma treatments of polyamide materials

NASA Astrophysics Data System (ADS)

Yip, Yiu Wan Joanne

Polyamides have found widespread application in various industrial sectors, for example, they are used in apparel, home furnishings and similar uses. However, the requirements for high quality performance products are continually increasing and these promote a variety of surface treatments for polymer modification. UV excimer laser and low temperature plasma treatments are ideally suited for polyamide modification because they can change the physical and chemical properties of the material without affecting its bulk features. This project aimed to study the modification of polyamides by UV excimer laser irradiation and low temperature plasma treatment. The morphological changes in the resulting samples were analysed by scanning electron microscopy (SEM) and tapping mode atomic force microscopy (TM-AFM). The chemical modifications were studied by x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and chemical force microscopy (CFM). Change in degree of crystallinity was examined by differential scanning calorimetry (DSC). After high-fluence laser irradiation, topographical results showed that ripples of micrometer size form on the fibre surface. By contrast, sub-micrometer size structures form on the polyamide surface when the applied laser energy is well below its ablation threshold. After high-fluence laser irradiation, chemical studies showed that the surface oxygen content of polyamide is reduced. A reverse result is obtained with low-fluence treatment. The DSC result showed no significant change in degree of crystallinity in either high-fluence or low-fluence treated samples. The same modifications in polyamide surfaces were studied after low temperature plasma treatment with oxygen, argon or tetrafluoromethane gas. The most significant result was that the surface oxygen content of polyamide increased after oxygen and argon plasma treatments. Both treatments induced many hydroxyl (-OH) and carboxylic acid (-COOH) functional groups, which increased water absorption. However, after tetrafluoromethane plasma treatment it was found that the -CF, -CF2 and -CF3 groups were introduced to the polyamide surface and this enhanced the hydrophobicity of the fabric. Suggested explanations are given of the mechanisms that produce the structure of the polyamide after the processes of laser irradiation (both high- and low-fluence) and plasma treatment. The fundamental approach used in modelling was considered the temperature profile of the material during the treatment. The development of high-fluence induced structures was caused by elevated temperatures in the subsurface volume and preexisting stress caused by fiber extrusion. The structure formation under LF laser irradiation was determined by thermal effect accompanied by the optical phenomenon of interference. Ripple structures formed by plasma were closely related to physical or chemical etching. Possible applications of plasma and laser technologies in the textile and clothing industries are considered. Oxygen plasma seems to be the best candidate to improve the wettability of the fabric, while tetrafluoromethane plasma can be applied to produce a water repellent surface. Surface treatments including CF4 plasma, high-fluence and low-fluence laser treatments produce a deeper color in disperse dyed fabrics using the same amount of dyestuff as chemicals like leveling agents and dyestuff can be reduced during the textile manufacturing process. UV laser and low temperature plasma modification processes are promising techniques for polymer/fabric surface modification and have industrial potential as they are environmentally friendly dry processes which do not involve any solvents.

Ultrastructural findings in the brain of fruit flies (Drosophila melanogaster) and mice exposed to high-energy particle radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'Amelio, F.; Kraft, L.M.; D'Antoni-D'Amelio, E.

1984-01-01

Effects of high energy, heavy particle (HZE) radiation were studied in the brain of the fruit fly (Drosophila melanogaster) exposed to argon (40Ar) or krypton (84Kr) ions. In the flies exposed to argon the fluence ranged from 6 X 10(4) to 8 X 10(7) particles/cm2. The insects were killed 35 days after exposure. Extensive tissue fragmentation was observed at the higher fluence employed. At fluences ranging from 5 X 10(6) (one hit/two cell bodies) to 9 X 10(4) (one hit/90 cell bodies) particles/cm2, swelling of the neuronal cytoplasm and focally fragmented membranes was observed. Marked increase of glial lamellae aroundmore » nerve cell processes was seen at fluences ranging from one hit/six to one hit/135 cell bodies. In the flies irradiated with krypton, the fluences employed were 5.8 X 10(3) and 2.2 X 10(6) particles/cm2. Acute and late effects were evaluated. In the flies killed 36 hours after exposure (acute effects) to either fluence, glycogen particles were found in the neuroglial compartment. The granules were no longer present in flies killed 35 days later (late effects). From these studies it appears that the Drosophila brain is a useful model to investigate radiation damage to mature neurons, neuroglia, and therefore, to the glio-neuronal metabolic unit. In a separate study, the synaptic profiles of the neuropil in layers II-III of the frontal cerebral cortex of anesthesized adult LAFl mice were quantitatively appraised after exposure to argon (40Ar) particles. The absorbed dose ranged from 0.05 to 5 gray (Gy) plateau. It was determined that the sodium pentobarbital anesthesia per se results in a significant decrease in synaptic profile length one day after anesthetization, with return to normal values after 2-28 days. Irradiation with 0.05-5 Gy argon particles significantly inhibited the synaptic shortening effect of anesthesia at one day after exposure.« less

Swift heavy ion irradiation studies of GdFeO3 orthoferrite thin films

NASA Astrophysics Data System (ADS)

Kaur, Pawanpreet; Pandit, Rabia; Sharma, K. K.; Kumar, Ravi

2018-04-01

Thin films of GdFeO3, orthoferrite have been grown on MgO (001) substrate by pulsed laser deposition technique (PLD) to investigate the effect of swift heavy ion irradiation on their structural and magnetic properties. Thin films were irradiated with 200 MeV Ag15+ ions with fluence of 1×1011ions/cm2. The results of X-ray diffraction, atomic force microscopy and vibrating sample magnetometer characterization techniques are found to be different for the irradiated film from that of the pristine sample. The modifications in the irradiated samples are explained in terms of the ion-induced disorder.

Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

PubMed

Gnaser, Hubert; Radny, Tobias

2015-12-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

Radiochromic film sensitivity calibrations using ion beams from a Pelletron accelerator

NASA Astrophysics Data System (ADS)

Filkins, T. M.; Steidle, Jessica; Ward, R. J.; Freeman, C. G.; Padalino, S. J.; Regan, S. P.; Sangster, T. C.

2015-11-01

Radiochromic film (RCF) is a transparent detector film that permanently changes color following exposure to ionizing radiation. The optical density of the film increases with increasing absorbed dose. RCF is convenient to use because it requires no chemical processing and can be scanned using commercially available document scanners. RCF is used frequently in medical applications, but is also used in a variety of diagnostics in high energy density physics. The film consists of a single or double layer of radiation-sensitive organic microcrystal monomers placed onto a polyester backing. GafchromicTM manufactures a large number of different types of RCF, and new types of film frequently replace older products. In this study, the sensitivity of several types of RCF to ion beams of different energies was measured. Ion beams produced by the SUNY Geneseo 1.7 MV Pelletron accelerator were directed into a target chamber where they scattered off of a gold foil. A sample of RCF was exposed to the scattered ions. The fluence of incident particles on the film was measured using a surface barrier detector. Results of these calibrations will be presented. This work was funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

Helium-ion microscopy, helium-ion irradiation and nanoindentation of Eurofer 97 and ODS Eurofer

NASA Astrophysics Data System (ADS)

Bergner, F.; Hlawacek, G.; Heintze, C.

2018-07-01

Understanding of unsolved details of helium embrittlement requires experimental evidence for dedicated sets of materials and over a wide range of irradiation conditions. The study is focussed on the comparison of a reduced-activation ferritic-martensitic 9%Cr steel (Eurofer 97) with its oxide dispersion strengthened counterpart (ODS Eurofer) with respect to irradiation-induced hardening. Imaging and He-ion irradiation in the He-ion microscope at 30 °C in a wide range of appm He (from 0.9 × 102 to 1.8 × 106) and displacements per atom (dpa) (from 3 × 10-3 to 65) were combined with post-irradiation nanoindentation in order to detect blistering and irradiation-induced hardness changes. The applicability of this combination of techniques is demonstrated and pros and cons are discussed. We have found that the indentation hardness increases significantly after in-microscope irradiation to 3 dpa (0.9 × 105 appm He). The irradiation-induced hardness increase is higher and the onset of significant hardening tends to occur at lower fluence for Eurofer 97 than for ODS Eurofer, indicating that the presence of oxide nanoparticles is efficient to reduce the detrimental effect of He under the applied irradiation conditions.

Graded Microstructure and Mechanical Performance of Ti/N-Implanted M50 Steel with Polyenergy.

PubMed

Jie, Jin; Shao, Tianmin

2017-10-19

M50 bearing steels were alternately implanted with Ti⁺ and N⁺ ions using solid and gas ion sources of implantation system, respectively. N-implantation was carried out at an energy of about 80 keV and a fluence of 2 × 10 17 ions/cm², and Ti-implantation at an energy of about 40-90 keV and a fluence of 2 × 10 17 ions/cm². The microstructures of modification layers were analyzed by grazing-incidence X-ray diffraction, auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results showed that the gradient structure was formed under the M50 bearing steel subsurface, along the ion implantation influence zone composed of amorphous, nanocrystalline, and gradient-refinement phases. A layer of precipitation compounds like TiN is formed. In addition, nano-indentation hardness and tribological properties of the gradient structure subsurface were examined using a nano-indenter and a friction and wear tester. The nano-indentation hardness of N + Ti-co-implanted sample is above 12 GPa, ~1.3 times than that of pristine samples. The friction coefficient is smaller than 0.2, which is 22.2% of that of pristine samples. The synergism between precipitation-phase strengthening and gradient microstructure is the main mechanism for improving the mechanical properties of M50 materials.

Graded Microstructure and Mechanical Performance of Ti/N-Implanted M50 Steel with Polyenergy

PubMed Central

Jie, Jin; Shao, Tianmin

2017-01-01

M50 bearing steels were alternately implanted with Ti+ and N+ ions using solid and gas ion sources of implantation system, respectively. N-implantation was carried out at an energy of about 80 keV and a fluence of 2 × 1017 ions/cm2, and Ti-implantation at an energy of about 40–90 keV and a fluence of 2 × 1017 ions/cm2. The microstructures of modification layers were analyzed by grazing-incidence X-ray diffraction, auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The results showed that the gradient structure was formed under the M50 bearing steel subsurface, along the ion implantation influence zone composed of amorphous, nanocrystalline, and gradient-refinement phases. A layer of precipitation compounds like TiN is formed. In addition, nano-indentation hardness and tribological properties of the gradient structure subsurface were examined using a nano-indenter and a friction and wear tester. The nano-indentation hardness of N + Ti-co-implanted sample is above 12 GPa, ~1.3 times than that of pristine samples. The friction coefficient is smaller than 0.2, which is 22.2% of that of pristine samples. The synergism between precipitation-phase strengthening and gradient microstructure is the main mechanism for improving the mechanical properties of M50 materials. PMID:29048360

Cell inactivation, repair and mutation induction in bacteria after heavy ion exposure: results from experiments at accelerators and in space.

PubMed

Horneck, G; Schafer, M; Baltschukat, K; Weisbrod, U; Micke, U; Facius, R; Bucker, H

1989-01-01

To understand the mechanisms of accelerated heavy ions on biological matter, the responses of spores of B. subtilis to this structured high LET radiation was investigated applying two different approaches. 1) By the use of the Biostack concept, the inactivation probability as a function of radial distance to single particles' trajectory (i.e. impact parameter) was determined in space experiments as well as at accelerators using low fluences of heavy ions. It was found that spores can survive even a central hit and that the effective range of inactivation extends far beyond impact parameters where inactivation by delta-ray dose would be effective. Concerning the space experiment, the inactivation cross section exceeds those from comparable accelerator experiments by roughly a factor of 20. 2) From fluence effect curves, cross sections for inactivation and mutation induction, and the efficiency of repair processes were determined. They are influenced by the ions characteristics in a complex manner. According to dependence on LET, at least 3 LET ranges can be differentiated: A low LET range (app. < 200 keV/micrometers), where cross sections for inactivation and mutation induction follow a common curve for different ions and where repair processes are effective; an intermediate LET range of the so-called saturation cross section with negligible mutagenic and repair efficiency; and a high LET range (>1000 keV/micrometers) where the biological endpoints are majorly dependent on atomic mass and energy of the ion under consideration.

EPDM Rubber Modified by Nitrogen Plasma Immersion Ion Implantation.

PubMed

Kondyurin, Alexey

2018-04-24

Ethylene-propylene diene monomer rubber (EPDM) was treated by plasma immersion ion implantation (PIII) with nitrogen ions of 20 keV energy and fluence from 10 13 to 10 16 ions/cm². The Fourier-transform infrared attenuated total reflection spectra, atomic force microscopy and optical microscopy showed significant structure changes of the surface. The analysis of an interface of PIII treated EPDM rubber with polyurethane binder showed a cohesive character of the adhesion joint fracture at the presence of solvent and interpreted as covalent bond network formation between the PIII treated rubber and the adhesive.

EPDM Rubber Modified by Nitrogen Plasma Immersion Ion Implantation

PubMed Central

2018-01-01

Ethylene-propylene diene monomer rubber (EPDM) was treated by plasma immersion ion implantation (PIII) with nitrogen ions of 20 keV energy and fluence from 1013 to 1016 ions/cm2. The Fourier-transform infrared attenuated total reflection spectra, atomic force microscopy and optical microscopy showed significant structure changes of the surface. The analysis of an interface of PIII treated EPDM rubber with polyurethane binder showed a cohesive character of the adhesion joint fracture at the presence of solvent and interpreted as covalent bond network formation between the PIII treated rubber and the adhesive. PMID:29695109

Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

NASA Astrophysics Data System (ADS)

Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

2018-05-01

NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

Sputtering Erosion in the Ion Thruster

NASA Technical Reports Server (NTRS)

Ray, Pradosh K.; Mantenieks, Maris A. (Technical Monitor)

2000-01-01

During the first phase of this research, the sputtering yields of molybdenum by low energy (100 eV and higher) xenon ions were measured by using the methods of secondary neutral mass spectrometry (SNMS) and Rutherford backscattering spectrometry (RBS). However, the measured sputtering yields were found to be far too low to explain the sputtering erosions observed in the long-duration tests of ion thrusters. The only difference between the sputtering yield measurement experiments and the ion thruster tests was that the later are conducted at high ion fluences. Hence, a study was initiated to investigate if any linkage exists between high ion fluence and an enhanced sputtering yield. The objective of this research is to gain an understanding of the causes of the discrepancies between the sputtering rates of molybdenum grids in an ion thruster and those measured from our experiments. We are developing a molecular dynamics simulation technique for studying low-energy xenon ion interactions with molybdenum. It is difficult to determine collision sequences analytically for primary ions below the 200 eV energy range where the ion energy is too low to be able to employ a random cascade model with confidence and it is too high to have to consider only single collision at or near the surface. At these low energies, the range of primary ions is about 1 to 2 nm from the surface and it takes less than 4 collisions on the average to get an ion to degrade to such an energy that it can no longer migrate. The fine details of atomic motion during the sputtering process are revealed through computer simulation schemes. By using an appropriate interatomic potential, the positions and velocities of the incident ion together with a sufficient number of target atoms are determined in small time steps. Hence, it allows one to study the evolution of damages in the target and its effect on the sputtering yield. We are at the preliminary stages of setting up the simulation program.

Fabrication and characterisation of embedded metal nanostructures by ion implantation with nanoporous anodic alumina masks

NASA Astrophysics Data System (ADS)

Guan, Wei; Peng, Nianhua; Jeynes, Christopher; Ghatak, Jay; Peng, Yong; Ross, Ian M.; Bhatta, Umananda M.; Inkson, Beverley J.; Möbus, Günter

2013-07-01

Lateral ordered Co, Pt and Co/Pt nanostructures were fabricated in SiO2 and Si3N4 substrates by high fluence metal ion implantation through periodic nanochannel membrane masks based on anodic aluminium oxides (AAO). The quality of nanopatterning transfer defined by various AAO masks in different substrates was examined by transmission electron microscopy (TEM) in both imaging and spectroscopy modes.

Rolling contact fatigue of surface modified 440C using a 'Ge-Polymet' type disc rod test rig

NASA Technical Reports Server (NTRS)

Thom, Robert L.

1989-01-01

Through hardened 440 C martensitic stainless steel test specimens were surface modified and tested for changes in rolling contact fatigue using a disc on rod test rig. The surface modifications consisted of nitrogen, boron, titanium, chromium, tantalum, carbon, or molybdenum ion implantation at various ion fluences and energies. Tests were also performed on specimens reactively sputtered with titanium nitride.

The Use of Ion Implantation for Materials Processing.

DTIC Science & Technology

1986-03-06

34 ASME, J. Lub. Technology 105, pp. 534-541 (1983). 89. J. M. Lambert, P. A. Treado, D . Trbojevic , R. G. Allas, A. R. Knudson, G. W. Reynolds, and F. R...Singer and R.G. Vardiman D . In Situ Auger Analysis Of Surface Composition During High Fluence Ion Implantation...Niobium Implantation Of Iron Films ..............................................37 B. D . Sartwell and D.A. Baldwin F. Sputtering And Migration During Ta

Pulsed Excimer Laser Processing for Cost-Effective Solar Cells

NASA Technical Reports Server (NTRS)

Wong, D.

1985-01-01

Residual lattice damage by 5 keV ion implantation and surface flaws induced by wafer cleaning are proven to affect the V sub oc more adversely for laser annealed cells than conventional thermal diffusion. However, an alternative, molecular implantation of molecular species holds potential. The first experimental results are encouraging. The lack of a commercially available mass analyzed implantation with low energy, high fluence ions is constraining.

Defects and Interfaces on PtPb Nanoplates Boost Fuel Cell Electrocatalysis.

PubMed

Sun, Yingjun; Liang, Yanxia; Luo, Mingchuan; Lv, Fan; Qin, Yingnan; Wang, Lei; Xu, Chuan; Fu, Engang; Guo, Shaojun

2018-01-01

Nanostructured Pt is the most efficient single-metal catalyst for fuel cell technology. Great efforts have been devoted to optimizing the Pt-based alloy nanocrystals with desired structure, composition, and shape for boosting the electrocatalytic activity. However, these well-known controls still show the limited ability in maximizing the Pt utilization efficiency for achieving more efficient fuel cell catalysis. Herein, a new strategy for maximizing the fuel cell catalysis by controlling/tuning the defects and interfaces of PtPb nanoplates using ion irradiation technique is reported. The defects and interfaces on PtPb nanoplates, controlled by the fluence of incident C + ions, make them exhibit the volcano-like electrocatalytic activity for methanol oxidation reaction (MOR), ethanol oxidation reaction (EOR), and oxygen reduction reaction (ORR) as a function of ion irradiation fluence. The optimized PtPb nanoplates with the mixed structure of dislocations, subgrain boundaries, and small amorphous domains are the most active for MOR, EOR, and ORR. They can also maintain high catalytic stability in acid solution. This work highlights the impact and significance of inducing/controlling the defects and interfaces on Pt-based nanocrystals toward maximizing the catalytic performance by advanced ion irradiation strategy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding of the Formation of Micro/Nanoscale Structures on Metal Surfaces by Ultrafast Pulse Laser Processing

NASA Astrophysics Data System (ADS)

Peng, Edwin

In the recent decades, there has been much interest in functionalized surfaces produced by ultrafast laser processing. Using pulse lasers with nanosecond to femtosecond time scale, a wide range of micro/nanoscale structures can be produced on virtually all metal surfaces. These surface structures create special optoelectronic, wetting, and tribological properties with a diverse range of potential applications. The formation mechanisms of these surface structures, especially microscale, mound-like structures, are not fully understood. There has been wide study of ultrafast laser processing of metals. Yet, the proposed formation models present in current literature often lack sufficient experimental verification. Specifically, many studies are limited to surface characterization, e.g. scanning electron microscopy of the surfaces of these micro/nanoscale structures. Valuable insight into the physical processes responsible for formation can be obtained if standard material science characterization methods are performed across the entire mound. In our study, we examined mound-like structures formed on three metal alloys. Using cross section and 3D slice and view operations by a dual beam scanning electron microscope-focused ion beam, the interior microstructures of these mounds are revealed. Taking advantage of amorphous phase formation during laser processing of Ni60Nb40, we verified the fluence-dependent formation model: mounds formed at low fluence are primarily the result of ablation while mounds formed at high fluence are formed by both ablation and rapid resolidification by hydrodynamical fluid flow. For the first time, we revealed the cross section of a wide variety of mound-like structures on titanium surfaces. The increased contribution to mound formation by fluid flow with increasing fluence was observed. Finally, a 3D scanning electron microscopy technique was applied for mounds produced on silver surface by delayed-pulse laser processing. The interior microstructure demonstrated that most of the volume comprised of resolidified silver grains with 1% porosity.

Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

2014-12-01

Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

Tailoring optical properties of TiO2-Cr co-sputtered films using swift heavy ions

NASA Astrophysics Data System (ADS)

Gupta, Ratnesh; Sen, Sagar; Phase, D. M.; Avasthi, D. K.; Gupta, Ajay

2018-05-01

Effect of 100 MeV Au7+ ion irradiation on structure and optical properties of Cr-doped TiO2 films has been studied using X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, UV-Visible spectroscopy, X-ray reflectivity, and atomic force microscopy. X-ray reflectivity measurement implied that film thickness reduces as a function of ion fluence while surface roughness increases. The variation in surface roughness is well correlated with AFM results. Ion irradiation decreases the band gap energy of the film. Swift heavy ion irradiation enhances the oxygen vacancies in the film, and the extra electrons in the vacancies act as donor-like states. In valence band spectrum, there is a shift in the Ti3d peak towards lower energies and the shift is equivalent to the band gap energy obtained from UV spectrum. Evidence for band bending is also provided by the corresponding Ti XPS peak which exhibits a shift towards lower energy due to the downward band bending. X-ray absorption studies on O Kand Cr L3,2 edges clearly indicate that swift heavy ion irradiation induces formation of Cr-clusters in TiO2 matrix.

50 MeV, Li{sup 3+} - ion irradiation effect on magnetic ordering of Y{sup 3+} - substituted yttrium iron garnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, P. U.; Zankat, K. B.; Dolia, S. N.

2016-05-06

This communication presents the effect of non-magnetic Y{sup 3+} ions substitution for magnetic Fe{sup 3+} ions and 50 MeV, Li{sup 3+} ion irradiation (fluence: 5 × 10{sup 13} ions/cm{sup 2}) on magnetic ordering and Neel temperature of Y{sub 3+x}Fe{sub 5-x}O{sub 12} (x = 0.0, 0.2, 0.4 and 0.6) garnet system, studied by means of X-ray powder diffractometry and thermal variation of low field (0.5 Oe) ac susceptibility measurements. The un-irradiated compositions exhibit normal ferrimagnetic behavior with decrease in transition temperature (T{sub N}) on increasing Y{sup 3+}-concentration (x). The irradiated counterparts are characterized by tailing effect indicative of non-uniform effect of irradiationmore » and lower value of T{sub N}. The results have been discussed based on the weakening of magnetic exchange interactions and cumulative effect of redistribution of cations and fractional creation of localized paramagnetic centers resulting from swift heavy ion irradiation. The Neel temperatures and exchange integrals have been calculated theoretically.« less

Radiation-Induced Chemical Dynamics in Ar Clusters Exposed to Strong X-Ray Pulses.

PubMed

Kumagai, Yoshiaki; Jurek, Zoltan; Xu, Weiqing; Fukuzawa, Hironobu; Motomura, Koji; Iablonskyi, Denys; Nagaya, Kiyonobu; Wada, Shin-Ichi; Mondal, Subhendu; Tachibana, Tetsuya; Ito, Yuta; Sakai, Tsukasa; Matsunami, Kenji; Nishiyama, Toshiyuki; Umemoto, Takayuki; Nicolas, Christophe; Miron, Catalin; Togashi, Tadashi; Ogawa, Kanade; Owada, Shigeki; Tono, Kensuke; Yabashi, Makina; Son, Sang-Kil; Ziaja, Beata; Santra, Robin; Ueda, Kiyoshi

2018-06-01

We show that electron and ion spectroscopy reveals the details of the oligomer formation in Ar clusters exposed to an x-ray free electron laser (XFEL) pulse, i.e., chemical dynamics triggered by x rays. With guidance from a dedicated molecular dynamics simulation tool, we find that van der Waals bonding, the oligomer formation mechanism, and charge transfer among the cluster constituents significantly affect ionization dynamics induced by an XFEL pulse of moderate fluence. Our results clearly demonstrate that XFEL pulses can be used not only to "damage and destroy" molecular assemblies but also to modify and transform their molecular structure. The accuracy of the predictions obtained makes it possible to apply the cluster spectroscopy, in connection with the respective simulations, for estimation of the XFEL pulse fluence in the fluence regime below single-atom multiple-photon absorption, which is hardly accessible with other diagnostic tools.

Radiation-Induced Chemical Dynamics in Ar Clusters Exposed to Strong X-Ray Pulses

NASA Astrophysics Data System (ADS)

Kumagai, Yoshiaki; Jurek, Zoltan; Xu, Weiqing; Fukuzawa, Hironobu; Motomura, Koji; Iablonskyi, Denys; Nagaya, Kiyonobu; Wada, Shin-ichi; Mondal, Subhendu; Tachibana, Tetsuya; Ito, Yuta; Sakai, Tsukasa; Matsunami, Kenji; Nishiyama, Toshiyuki; Umemoto, Takayuki; Nicolas, Christophe; Miron, Catalin; Togashi, Tadashi; Ogawa, Kanade; Owada, Shigeki; Tono, Kensuke; Yabashi, Makina; Son, Sang-Kil; Ziaja, Beata; Santra, Robin; Ueda, Kiyoshi

2018-06-01

We show that electron and ion spectroscopy reveals the details of the oligomer formation in Ar clusters exposed to an x-ray free electron laser (XFEL) pulse, i.e., chemical dynamics triggered by x rays. With guidance from a dedicated molecular dynamics simulation tool, we find that van der Waals bonding, the oligomer formation mechanism, and charge transfer among the cluster constituents significantly affect ionization dynamics induced by an XFEL pulse of moderate fluence. Our results clearly demonstrate that XFEL pulses can be used not only to "damage and destroy" molecular assemblies but also to modify and transform their molecular structure. The accuracy of the predictions obtained makes it possible to apply the cluster spectroscopy, in connection with the respective simulations, for estimation of the XFEL pulse fluence in the fluence regime below single-atom multiple-photon absorption, which is hardly accessible with other diagnostic tools.

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

NASA Astrophysics Data System (ADS)

Semsang, Nuananong; Yu, LiangDeng

2013-07-01

Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32-1.0) single crystals

DOE PAGES

Zhang, Limin; Jiang, Weilin; Dissanayake, Amila C.; ...

2016-06-27

Lattice disorder and compositional changes in InxGa1-xN (x=0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3E13 cm-2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x=0.32 and 0.47),more » significant volume swelling of up to ~25% accompanied with oxidation in In-rich InxGa1-xN (x=0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

FTIR study of silicon carbide amorphization by heavy ion irradiations

NASA Astrophysics Data System (ADS)

Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

2017-03-01

We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C-SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C-SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

Physics of the Isotopic Dependence of Galactic Cosmic Ray Fluence Behind Shielding

NASA Technical Reports Server (NTRS)

Cucinotta, Francis A.; Saganti, Premkumar B.; Hu, Xiao-Dong; Kim, Myung-Hee Y.; Cleghorn, Timothy F.; Wilson, John W.; Tripathi, Ram K.; Zeitlin, Cary J.

2003-01-01

For over 25 years, NASA has supported the development of space radiation transport models for shielding applications. The NASA space radiation transport model now predicts dose and dose equivalent in Earth and Mars orbit to an accuracy of plus or minus 20%. However, because larger errors may occur in particle fluence predictions, there is interest in further assessments and improvements in NASA's space radiation transport model. In this paper, we consider the effects of the isotopic composition of the primary galactic cosmic rays (GCR) and the isotopic dependence of nuclear fragmentation cross-sections on the solution to transport models used for shielding studies. Satellite measurements are used to describe the isotopic composition of the GCR. Using NASA's quantum multiple-scattering theory of nuclear fragmentation (QMSFRG) and high-charge and energy (HZETRN) transport code, we study the effect of the isotopic dependence of the primary GCR composition and secondary nuclei on shielding calculations. The QMSFRG is shown to accurately describe the iso-spin dependence of nuclear fragmentation. The principal finding of this study is that large errors (plus or minus 100%) will occur in the mass-fluence spectra when comparing transport models that use a complete isotope grid (approximately 170 ions) to ones that use a reduced isotope grid, for example the 59 ion-grid used in the HZETRN code in the past, however less significant errors (less than 20%) occur in the elemental-fluence spectra. Because a complete isotope grid is readily handled on small computer workstations and is needed for several applications studying GCR propagation and scattering, it is recommended that they be used for future GCR studies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Gen; Lee, Martin A., E-mail: gjk44@wildcats.unh.edu

The effects of scatter-dominated interplanetary transport on the spectral properties of the differential fluence of large gradual solar energetic particle (SEP) events are investigated analytically. The model assumes for simplicity radial constant solar wind and radial magnetic field. The radial diffusion coefficient is calculated with quasilinear theory by assuming a spectrum of Alfvén waves propagating parallel to the magnetic field. Cross-field transport is neglected. The model takes into consideration several essential features of gradual event transport: nearly isotropic ion distributions, adiabatic deceleration in a divergent solar wind, and particle radial scattering mean free paths increasing with energy. Assuming an impulsivemore » and spherically symmetric injection of SEPs with a power-law spectrum near the Sun, the predicted differential fluence spectrum exhibits at 1 AU three distinctive power laws for different energy domains. The model naturally reproduces the spectral features of the double power-law proton differential fluence spectra that tend to be observed in extremely large SEP events. We select nine western ground-level events (GLEs) out of the 16 GLEs during Solar Cycle 23 and fit the observed double power-law spectra to the analytical predictions. The compression ratio of the accelerating shock wave, the power-law index of the ambient wave intensity, and the proton radial scattering mean free path are determined for the nine GLEs. The derived parameters are generally in agreement with the characteristic values expected for large gradual SEP events.« less

Effect of neutron-irradiation on optical properties of SiO2-Na2O-MgO-Al2O3 glasses

NASA Astrophysics Data System (ADS)

Sandhu, Amanpreet Kaur; Singh, Surinder; Pandey, Om Prakash

2009-07-01

Silica based glasses are used as nuclear shielding materials. The effect of radiation on these glasses varies as per the constituents used in these glasses. Glasses of different composition of SiO2-Na2OMgO-Al2O3 were made by melt casting techniques. These glasses were irradiated with neutrons of different fluences. Optical absorption measurements of neutron-irradiated silica based glasses were performed at room temperature (RT) to detect and characterize the induced radiation damage in these materials. The absorption band found for neutron-irradiated glasses are induced by hole type color centers related to non-bridging oxygen ions (NBO) located in different surroundings of glass matrix. Decrease in the transmittance indicates the formation of color-center defects. Values for band gap energy and the width of the energy tail above the mobility gap have been measured before and after irradiation. The band gap energy has been found to decrease with increasing fluence while the Urbach energy shows an increase. The effects of the composition of the glasses on these parameters have been discussed in detail in this paper.

Assessing material properties for fusion applications by ion beams

NASA Astrophysics Data System (ADS)

Catarino, N.; Dias, M.; Jepu, I.; Alves, E.

2017-10-01

The plasma-facing materials in the ITER divertor area must withstand unusual events, such as the edge-localized modes (ELMS). At the point when an ELM occurs, up to 30% of the energy can be deposited on the plasma-facing boundary in the form of the heat and particle load causing material loss due to sublimation. Tungsten is a promising candidate as a plasma-facing material in the ITER divertor area since it has a high melting point, good thermal conductivity and low sputtering yield, which minimizes the plasma contamination. However their brittleness at low temperatures which is worsened by irradiation is an issue. One strategy to modulate the properties of tungsten is alloying this element with other refractory metals, such as tantalum that shows higher toughness, lower activation and higher radiation resistance. In the present study tungsten-tantalum alloys (W-Ta) were produced by Ta implantation. The fundamental mechanisms which govern the behaviour of defect dynamics in W-Ta materials under reactor conditions, were simulated by the implantation of He and D. The microstructure observations of the W plates that after single Ta implantation revealed crater-like cavities and a more severe effect after D implantation. The effect increase with the increasing of D fluence. However at fluences higher than 1021D/m the effect is reduced. In addition, blistering was observed in W-Ta plates implanted with He. The D retention in the W-Ta alloys increases with the implanted fluence with tendency for saturation for high fluences. Moreover the results show that D retention is higher after sequential He and D implantation than for single D implantation. The diffractogram of W-Ta alloys implanted with He evidenced the presence of broadened W peaks associated with stress induced by irradiation, which may cause internal stress field resulting in a distortion of the crystal lattice. These irradiation defects can be observed in the D release spectra where three peaks are associated with three types of defects in W and W-Ta implanted with He and D.

Study of Swift Heavy Ion Modified Conducting Polymer Composites for Application as Gas Sensor

PubMed Central

Srivastava, Alok; Singh, Virendra; Dhand, Chetna; Kaur, Manindar; Singh, Tejvir; Witte, Karin; Scherer, Ulrich W.

2006-01-01

A polyaniline-based conducting composite was prepared by oxidative polymerisation of aniline in a polyvinylchloride (PVC) matrix. The coherent free standing thin films of the composite were prepared by a solution casting method. The polyvinyl chloride-polyaniline composites exposed to 120 MeV ions of silicon with total ion fluence ranging from 1011 to 1013 ions/cm2, were observed to be more sensitive towards ammonia gas than the unirradiated composite. The response time of the irradiated composites was observed to be comparably shorter. We report for the first time the application of swift heavy ion modified insulating polymer conducting polymer (IPCP) composites for sensing of ammonia gas.

Characteristics of Solar Energetic Ions as a Function of Longitude

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cohen, C. M. S.; Mewaldt, R. A.; Mason, G. M., E-mail: cohen@srl.caltech.edu

Since the 2006 launch of STEREO , multi-spacecraft studies have yielded several surprising results regarding the spread of solar energetic particles (SEPs) within the inner heliosphere. We have investigated the role of energy and ridigity, using ACE and STEREO 10 MeV n{sup −1} oxygen data to identify 41 large SEP events observed by two or three spacecraft. We calculated fluence spectra from ∼0.1 to >10 MeV n{sup −1} for H, He, O, and Fe for each event at the observing spacecraft (including SOHO and GOES ). The particle fluences at 0.3, 1, and 10 MeV n{sup −1} were examined asmore » a function of the distance between the associated solar flare longitude and the spacecraft magnetic footpoints at the Sun to determine the longitudinal spread of particles and study how the distribution centers and widths depend on energy and charge-to-mass (Q/M) for the first time. On average, the three-spacecraft event distributions were centered at 22 ± 4° west of the flare site and were 43 ± 1° wide, though there was substantial variability, while the fit to the aggregate of the two-spacecraft event fluences yielded significantly wider distributions at 0.3 and 1 MeV n{sup −1}. The widths derived from both the three- and two-spacecraft events show an energy dependence with distributions narrowing with increasing energy, consistent with lower energy ions experiencing more field line co-rotation, or being accelerated over a larger portion of the CME-driven shock or for longer times as the shock expands. Surprisingly, no clear evidence was found for a Q/M dependence to the widths or centers suggesting that rigidity-related processes are not the dominant means of spreading particles in longitude.« less

Processing of silicon solar cells by ion implantation and laser annealing

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

1981-01-01

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

High fluence swift heavy ion structure modification of the SiO2/Si interface and gate insulator in 65 nm MOSFETs

NASA Astrophysics Data System (ADS)

Ma, Yao; Gao, Bo; Gong, Min; Willis, Maureen; Yang, Zhimei; Guan, Mingyue; Li, Yun

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO2/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO2 and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

2.7 MeV Ar11+ ion irradiation induced structural evolution in Lu2(Ti2-xLux)O7-x/2 pyrochlores

NASA Astrophysics Data System (ADS)

Yang, D. Y.; Liu, C. G.; Zhang, K. Q.; Xia, Y.; Chen, L. J.; Liu, H.; Li, Y. H.

2015-11-01

This paper aims to study the radiation effects of nonstoichiometric pyrochlore series Lu2(Ti2-xLux)O7-x/2 (x = 0-0.667). Polycrystalline Lu2(Ti2-xLux)O7-x/2 samples were irradiated with 2.7 MeV Ar11+ ions up to a fluence of 8 × 1014 ions/cm2. The irradiated samples were characterized using grazing incidence X-ray diffraction technique. The results reveal that Lu2(Ti2-xLux)O7-x/2 samples undergo significant amorphization and lattice swelling upon irradiation. Specifically, the amorphization process is predominantly driven by ballistic nuclear energy deposition of Ar11+ ions at this energy regime, which can be well described by a direct-impact/defect-stimulated model. Both the amorphization fraction and the relative variation of lattice parameter decrease with increasing x, showing a strong dependence on the chemical composition. The results are then discussed in the framework of the structural disorder and recovery ability from damage, applying an atomic layer model.

Thermoluminescent response of TLD-100 irradiated with 20 keV electrons and the use of radiochromic dye films for the fluence determination

NASA Astrophysics Data System (ADS)

Mercado-Uribe, H.; Brandan, M. E.

2004-07-01

We have measured the LiF:Mg,Ti (TLD-100) fluence response and supralinearity function to 20 keV electrons in the fluence interval between 5 × 10 9 and 4 × 10 12 cm -2. TLD-100 shows linear response up to 2 × 10 10 cm -2, followed by supralinearity and saturation after 10 12 cm -2. Peak 5 is slightly supralinear, f( n) max=1.1±0.1, while high temperature peaks reach up to f( n) max≈8. Peak 5 saturates at n≈1×10 11 cm -2, fluence smaller than any of the saturating fluences of the high temperature peaks. We have also measured the glow curve shape of TLD-100 irradiated with 40 keV electrons, beta particles from a 90Sr/ 90Y source and 1.3 and 6.0 MeV electrons from accelerators. Results are interesting and unexpected in that, for a given macroscopic dose, electrons show a smaller relative contribution of high-temperature peaks with respect to peak 5 than heavy ions or X- and γ-rays. The 20 and 40 keV electron irradiations were performed with a scanning electron microscope using radiochromic dye film to measure fluence. Since film calibrations were performed using 60Co γ-rays which expose the totality of the film volume, the use of this method with low energy electrons required to develop a formalism that takes into account the sensitive thickness of the film in relation to the range of the incident particles.

Ion-to-Neutral Ratios and Thermal Proton Transfer in Matrix-Assisted Laser Desorption/Ionization

NASA Astrophysics Data System (ADS)

Lu, I.-Chung; Chu, Kuan Yu; Lin, Chih-Yuan; Wu, Shang-Yun; Dyakov, Yuri A.; Chen, Jien-Lian; Gray-Weale, Angus; Lee, Yuan-Tseh; Ni, Chi-Kung

2015-07-01

The ion-to-neutral ratios of four commonly used solid matrices, α-cyano-4-hydroxycinnamic acid (CHCA), 2,5-dihydroxybenzoic acid (2,5-DHB), sinapinic acid (SA), and ferulic acid (FA) in matrix-assisted laser desorption/ionization (MALDI) at 355 nm are reported. Ions are measured using a time-of-flight mass spectrometer combined with a time-sliced ion imaging detector. Neutrals are measured using a rotatable quadrupole mass spectrometer. The ion-to-neutral ratios of CHCA are three orders of magnitude larger than those of the other matrices at the same laser fluence. The ion-to-neutral ratios predicted using the thermal proton transfer model are similar to the experimental measurements, indicating that thermal proton transfer reactions play a major role in generating ions in ultraviolet-MALDI.

Experimental and Monte Carlo studies of fluence corrections for graphite calorimetry in low- and high-energy clinical proton beams.

PubMed

Lourenço, Ana; Thomas, Russell; Bouchard, Hugo; Kacperek, Andrzej; Vondracek, Vladimir; Royle, Gary; Palmans, Hugo

2016-07-01

The aim of this study was to determine fluence corrections necessary to convert absorbed dose to graphite, measured by graphite calorimetry, to absorbed dose to water. Fluence corrections were obtained from experiments and Monte Carlo simulations in low- and high-energy proton beams. Fluence corrections were calculated to account for the difference in fluence between water and graphite at equivalent depths. Measurements were performed with narrow proton beams. Plane-parallel-plate ionization chambers with a large collecting area compared to the beam diameter were used to intercept the whole beam. High- and low-energy proton beams were provided by a scanning and double scattering delivery system, respectively. A mathematical formalism was established to relate fluence corrections derived from Monte Carlo simulations, using the fluka code [A. Ferrari et al., "fluka: A multi-particle transport code," in CERN 2005-10, INFN/TC 05/11, SLAC-R-773 (2005) and T. T. Böhlen et al., "The fluka Code: Developments and challenges for high energy and medical applications," Nucl. Data Sheets 120, 211-214 (2014)], to partial fluence corrections measured experimentally. A good agreement was found between the partial fluence corrections derived by Monte Carlo simulations and those determined experimentally. For a high-energy beam of 180 MeV, the fluence corrections from Monte Carlo simulations were found to increase from 0.99 to 1.04 with depth. In the case of a low-energy beam of 60 MeV, the magnitude of fluence corrections was approximately 0.99 at all depths when calculated in the sensitive area of the chamber used in the experiments. Fluence correction calculations were also performed for a larger area and found to increase from 0.99 at the surface to 1.01 at greater depths. Fluence corrections obtained experimentally are partial fluence corrections because they account for differences in the primary and part of the secondary particle fluence. A correction factor, F(d), has been established to relate fluence corrections defined theoretically to partial fluence corrections derived experimentally. The findings presented here are also relevant to water and tissue-equivalent-plastic materials given their carbon content.

Desensitization and recovery of phototropic responsiveness in Arabidopsis thaliana

NASA Technical Reports Server (NTRS)

Janoudi, A. K.; Poff, K. L.

1993-01-01

Phototropism is induced by blue light, which also induces desensitization, a partial or total loss of phototropic responsiveness. The fluence and fluence-rate dependence of desensitization and recovery from desensitization have been measured for etiolated and red light (669-nm) preirradiated Arabidopsis thaliana seedlings. The extent of desensitization increased as the fluence of the desensitizing 450-nm light was increased from 0.3 to 60 micromoles m-2 s-1. At equal fluences, blue light caused more desensitization when given at a fluence rate of 1.0 micromole m-2 s-1 than at 0.3 micromole m-2 s-1. In addition, seedlings irradiated with blue light at the higher fluence rate required a longer recovery time than seedlings irradiated at the lower fluence rate. A red light preirradiation, probably mediated via phytochrome, decreased the time required for recovery from desensitization. The minimum time for detectable recovery was about 65 s, and the maximum time observed was about 10 min. It is proposed that the descending arm of the fluence-response relationship for first positive phototropism is a consequence of desensitization, and that the time threshold for second positive phototropism establishes a period during which recovery from desensitization occurs.

Triggering of spin-flipping-modulated exchange bias in FeCo nanoparticles by electronic excitation

PubMed Central

Sarker, Debalaya; Bhattacharya, Saswata; Srivastava, Pankaj; Ghosh, Santanu

2016-01-01

The exchange coupling between ferromagnetic (FM)-antiferromagnetic (AF) interfaces is a key element of modern spintronic devices. We here introduce a new way of triggering exchange bias (EB) in swift heavy ion (SHI) irradiated FeCo-SiO2 films, which is a manifestation of spin-flipping at high irradiation fluence. The elongation of FeCo nanoparticles (NPs) in SiO2 matrix gives rise to perpendicular magnetic anisotropy at intermediate fluence. However, a clear shift in hysteresis loop is evident at the highest fluence. This reveals the existence of an AF exchange pinning domain in the NPs, which is identified not to be oxide shell from XANES analysis. Thermal spike calculations along with first-principles based simulations under the framework of density functional theory (DFT) demonstrate that spin flipping of 3d valence electrons is responsible for formation of these AF domains inside the FM NPs. EXAFS experiments at Fe and Co K-edges further unravel that spin-flipping in highest fluence irradiated film results in reduced bond lengths. The results highlight the possibility of miniaturization of magnetic storage devices by using irradiated NPs instead of conventionally used FM-AF multilayers. PMID:27991552

Mutation induction in bacteria after heavy ion irradiation

NASA Technical Reports Server (NTRS)

Horneck, G.; Kozubek, S.

1994-01-01

From a compilation of experimental data on the mutagenic effects of heavy ions in bacteria, main conclusions have been drawn as follows: (1) The mutagenic efficacy of heavy ions in bacteria depends on physical and biological variables. Physical variables are the radiation dose, energy and charge of the ion; the biological variables are the bacterial strain, the repair genotype of bacteria, and the endpoint investigated (type of mutation, induction of enzymes related to mutagenesis); (2) The responses on dose or fluence are mainly linear or linear quadratic. The quadratic component, if found for low LET radiation, is gradually reduced with increasing LET; (3) At low values of Z and LET the cross section of mutation induction sigma m (as well as SOS response, sigma sos. and lambda phage induction, sigma lambda versus LET curves can be quite consistently described by a common function which increases up to approximately 100 keV/mu m. For higher LET values, the sigma(m) versus LET curves show the so-called 'hooks' observed also for other endpoints; (4) For light ions (Z is less than or equal to 4), the cross sections mostly decrease with increasing ion energy, which is probably related to the decrease of the specific energy departed by the ion inside the sensitive volume (cell). For ions in the range of Z = 10, sigma(m) is nearly independent on the ion energy. For heavier ions (Z is greater than or equal to 16), sigma(m) increases with the energy up to a maximum or saturation around 10 MeV/u. The increment becomes steeper with increasing atomic number of the ion. It correlates with the increasing track radius of the heavy ion; (5) The mutagenic efficiency per lethal event changes slightly with ion energy, if Z is small indicating a rough correlation between cellular lethality and mutation induction, only. For ions of higher Z this relation increases with energy, indicating a change in the 'mode' of radiation action from 'killing-prone' to 'mutation-prone'; and (6) Repair genotype substantially influences the radiation induced mutagenesis. Different mechanisms of mutation induction and/or different types of biologically significant lesions in wild type cells compared to repair deficient strains are a likely explanation.

Light parameters influence cell viability in antifungal photodynamic therapy in a fluence and rate fluence-dependent manner

NASA Astrophysics Data System (ADS)

Prates, Renato A.; da Silva, Eriques G.; Yamada, Aécio M.; Suzuki, Luis C.; Paula, Claudete R.; Ribeiro, Martha S.

2009-05-01

The aim of this study was to investigate the influence of light parameters on yeast cells. It has been proposed for many years that photodynamic therapy (PDT) can inactivate microbial cells. A number of photosensitizer and light sources were reported in different light parameters and in a range of dye concentrations. However, much more knowledge concerning the importance of fluence, fluence rate and exposure time are required for a better understanding of the photodynamic efficiency. Suspensions (106 CFU/mL) of Candida albicans, Candida krusei, and Cryptococcus neoformans var. grubii were used. Two fluence rates, 100 and 300 mW/cm2 were compared at 3, 6, and 9 min of irradiation, resulting fluences from 18 to 162 J/cm2. The light source was a laser emitting at λ = 660 nm with output power adjusted at 30 and 90 mW. As photosensitizer, one hundred-μM methylene blue was used. Temperature was monitored to verify possible heat effect and reactive oxygen species (ROS) formation was evaluated. The same fluence in different fluence rates showed dissimilar levels of inactivation on yeast cells as well as in ROS formation. In addition, the increase of the fluence rate showed an improvement on cell photoinactivation. PDT was efficient against yeast cells (6 log reduction), and no significant temperature increase was observed. Fluence per se should not be used as an isolate parameter to compare photoinactivation effects on yeast cells. The higher fluence rate was more effective than the lower one. Furthermore, an adequate duration of light exposure cannot be discarded.

Microdose Induced Data Loss on Floating Gate Memories

NASA Technical Reports Server (NTRS)

Guertin, Steven M.; Nguyen, Duc M.; Patterson, Jeffrey D.

2006-01-01

Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.

Certified ion implantation fluence by high accuracy RBS.

PubMed

Colaux, Julien L; Jeynes, Chris; Heasman, Keith C; Gwilliam, Russell M

2015-05-07

From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.

A search for energetic ion directivity in large solar flares

NASA Astrophysics Data System (ADS)

Vestrand, W. Thomas

One of the key observational questions for solar flare physics is: What is the number, the energy spectrum, and the angular distribution of flare accelerated ions? The standard method for deriving ion spectral shape employs the ratio of influences observed on the 4-7 MeV band to the narrow neutron capture line at 2.223 MeV. The 4-7 MeV band is dominated by the principal nuclear de-excitation lines from C-12 and O-16 which are generated in the low chromosphere by the direct excitation or spallation of nuclei by energetic ions. In contrast, the narrow 2.223 MeV line is produced by the capture of thermal neutrons on protons in the photosphere. These capture neutrons are generated by energetic ion interactions and thermalized by scattering in the solar atmosphere. In a series of papers, Ramaty, Lingenfelter, and their collaborators have calculated the expected ratio of fluence in the 4-7 MeV band to the 2.223 MeV line for a wide range of energetic ion spectral shapes (see, e.g. Hua and Lingenfelter 1987). Another technique for deriving ion spectral shapes and angular distributions uses the relative strength of the Compton tail associated with the 2.223 MeV neutron capture line (Vestrand 1988, 1990). This technique can independently constrain both the angular and the energy distribution of the energetic parent ions. The combination of this tail/line strength diagnostic with the line/(4-7) MeV fluence ratio can allow one to constrain both properties of the energetic ion distributions. The primary objective of our Solar Maximum Mission (SMM) guest investigator program was to study measurements of neutron capture line emission and prompt nuclear de-excitation for large flares detected by the Solar Maximum Mission/ Gamma-Ray Spectrometer (SMM/GRS) and to use these established line diagnostics to study the properties of flare accelerated ions.

A new Recoil Proton Telescope for energy and fluence measurement of fast neutron fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebreton, Lena; Bachaalany, Mario; Husson, Daniel

The spectrometer ATHENA (Accurate Telescope for High Energy Neutron metrology Applications), is being developed at the IRSN / LMDN (Institut de Radioprotection et de Surete nucleaire / Laboratoire de Metrologie et de dosimetrie des neutrons) and aims at characterizing energy and fluence of fast neutron fields. The detector is a Recoil Proton Telescope and measures neutron fields in the range of 5 to 20 MeV. This telescope is intended to become a primary standard for both energy and fluence measurements. The neutron detection is achieved by a polyethylene radiator for n-p conversion, three 50{sub m} thick silicon sensors that usemore » CMOS technology for the proton tracking and a 3 mm thick silicon diode to measure the residual proton energy. This first prototype used CMOS sensors called MIMOSTAR, initially developed for heavy ion physics. The use of CMOS sensors and silicon diode increases the intrinsic efficiency of the detector by a factor of ten compared with conventional designs. The first prototype has already been done and was a successful study giving the results it offered in terms of energy and fluence measurements. For mono energetic beams going from 5 to 19 MeV, the telescope offered an energy resolution between 5 and 11% and fluence difference going from 5 to 7% compared to other home standards. A second and final prototype of the detector is being designed. It will hold upgraded CMOS sensors called FastPixN. These CMOS sensors are supposed to run 400 times faster than the older version and therefore give the telescope the ability to support neutron flux in the order of 107 to 108cm{sup 2}:s{sup 1}. The first prototypes results showed that a 50 m pixel size is enough for a precise scattering angle reconstruction. Simulations using MCNPX and GEANT4 are already in place for further improvements. A DeltaE diode will replace the third CMOS sensor and will be installed right before the silicon diode for a better recoil proton selection. The final prototype with its new geometry will increase the telescopes efficiency by a factor of 1.5. It will also cover some of the most important points in metrology; repeatability, reproducibility and sustainability. (authors)« less

Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Temperature, illumination, and fluence dependence of current and voltage in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Faith, T. J.; Obenschain, A. F.

1974-01-01

Empirical equations have been derived from measurements of solar cell photovoltaic characteristics relating light-generated current and open circuit voltage to cell temperature, intensity of illumination and 1-MeV electron fluence. Both 2-ohm-cm and 10-ohm-cm cells were tested over the temperature range from 120 to 470 K, the illumination intensity range from 5 to 1830 mW/sq cm, and the electron fluence range from 1 x 10 to the 13th to 1 x 10 to the 16th electrons/sq cm. The normalized temperature coefficient of the light generated current varies as the 0.18 power of the fluence for temperatures above approximately 273 K and is independent of fluence at lower temperatures. At 140 mW/sq cm, a power law expression was derived which shows that the light-generated current decreases at a rate proportional to the 0.153 power of the fluence for both resistivities. The coefficient of the expression is larger for 2-ohm-cm cells; consequently, the advantage for 10-ohm-cm cells increased with increasing fluence.

Electrical properties of PMMA ion-implanted with low-energy Si+ beam

NASA Astrophysics Data System (ADS)

Hadjichristov, G. B.; Gueorguiev, V. K.; Ivanov, Tz E.; Marinov, Y. G.; Ivanov, V. G.; Faulques, E.

2010-01-01

The electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 - 1017 cm-2. The carbonaceous subsurface region of the Si+-implanted PMMA displays a significant DC conductivity and a sizable field effect that can be used for electronic applications.

Fluence-to-dose conversion coefficients for heavy ions calculated using the PHITS code and the ICRP/ICRU adult reference computational phantoms.

PubMed

Sato, Tatsuhiko; Endo, Akira; Niita, Koji

2010-04-21

The fluence to organ-absorbed-dose and effective-dose conversion coefficients for heavy ions with atomic numbers up to 28 and energies from 1 MeV/nucleon to 100 GeV/nucleon were calculated using the PHITS code coupled to the ICRP/ICRU adult reference computational phantoms, following the instruction given in ICRP Publication 103 (2007 (Oxford: Pergamon)). The conversion coefficients for effective dose equivalents derived using the radiation quality factors of both Q(L) and Q(y) relationships were also estimated, utilizing the functions for calculating the probability densities of absorbed dose in terms of LET (L) and lineal energy (y), respectively, implemented in PHITS. The calculation results indicate that the effective dose can generally give a conservative estimation of the effective dose equivalent for heavy-ion exposure, although it is occasionally too conservative especially for high-energy lighter-ion irradiations. It is also found from the calculation that the conversion coefficients for the Q(y)-based effective dose equivalents are generally smaller than the corresponding Q(L)-based values because of the conceptual difference between LET and y as well as the numerical incompatibility between the Q(L) and Q(y) relationships. The calculated data of these dose conversion coefficients are very useful for the dose estimation of astronauts due to cosmic-ray exposure.

Heavy ion mutagenesis: linear energy transfer effects and genetic linkage

NASA Technical Reports Server (NTRS)

Kronenberg, A.; Gauny, S.; Criddle, K.; Vannais, D.; Ueno, A.; Kraemer, S.; Waldren, C. A.; Chatterjee, A. (Principal Investigator)

1995-01-01

We have characterized a series of 69 independent mutants at the endogenous hprt locus of human TK6 lymphoblasts and over 200 independent S1-deficient mutants of the human x hamster hybrid cell line AL arising spontaneously or following low-fluence exposures to densely ionizing Fe ions (600 MeV/amu, linear energy transfer = 190 keV/microns). We find that large deletions are common. The entire hprt gene (> 44 kb) was missing in 19/39 Fe-induced mutants, while only 2/30 spontaneous mutants lost the entire hprt coding sequence. When the gene of interest (S1 locus = M1C1 gene) is located on a nonessential human chromosome 11, multilocus deletions of several million base pairs are observed frequently. The S1 mutation frequency is more than 50-fold greater than the frequency of hprt mutants in the same cells. Taken together, these results suggest that low-fluence exposures to Fe ions are often cytotoxic due to their ability to create multilocus deletions that may often include the loss of essential genes. In addition, the tumorigenic potential of these HZE heavy ions may be due to the high potential for loss of tumor suppressor genes. The relative insensitivity of the hprt locus to mutation is likely due to tight linkage to a gene that is required for viability.

Swift heavy-ions induced sputtering in BaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Singh, Udai B.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

2013-11-01

In our present experiment a series of barium fluoride thin films of different thicknesses have been deposited by electron beam evaporation technique at room temperature on silicon substrates. The effect of film thickness on the electronic sputter yield of polycrystalline BaF2 thin films has been reported in the present work. Power law for sputtered species collected on catcher grids has also been reported for film of lowest thickness. Sputtering has been performed by 100 MeV Au+28 ions. Atomic force microscopy (AFM) has been done to check the surface morphology of pristine samples. Glancing angle X-ray diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was done to determine the areal concentration of Ba and F atoms in the films. A reduction in the sputter yield of BaF2 films with the increase in film thickness has been observed from RBS results. The thickness dependence sputtering is explained on the basis of thermal spike and the energy confinement of the ions in the smaller grains. Also transmission electron microscopy (TEM) of the catchers shows a size distribution of sputtered species with values of power law exponent 1/2 and 3/2 for two fluences 5 × 1011 and 1 × 1012 ions/cm2, respectively.

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

NASA Astrophysics Data System (ADS)

Szilágyi, E.; Bányász, I.; Kótai, E.; Németh, A.; Major, C.; Fried, M.; Battistig, G.

2015-03-01

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2 ×1016 Ar/cm2 and 2.5 ×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.

Compelling evidence for Lucky Survivor and gas phase protonation: the unified MALDI analyte protonation mechanism.

PubMed

Jaskolla, Thorsten W; Karas, Michael

2011-06-01

This work experimentally verifies and proves the two long since postulated matrix-assisted laser desorption/ionization (MALDI) analyte protonation pathways known as the Lucky Survivor and the gas phase protonation model. Experimental differentiation between the predicted mechanisms becomes possible by the use of deuterated matrix esters as MALDI matrices, which are stable under typical sample preparation conditions and generate deuteronated reagent ions, including the deuterated and deuteronated free matrix acid, only upon laser irradiation in the MALDI process. While the generation of deuteronated analyte ions proves the gas phase protonation model, the detection of protonated analytes by application of deuterated matrix compounds without acidic hydrogens proves the survival of analytes precharged from solution in accordance with the predictions from the Lucky Survivor model. The observed ratio of the two analyte ionization processes depends on the applied experimental parameters as well as the nature of analyte and matrix. Increasing laser fluences and lower matrix proton affinities favor gas phase protonation, whereas more quantitative analyte protonation in solution and intramolecular ion stabilization leads to more Lucky Survivors. The presented results allow for a deeper understanding of the fundamental processes causing analyte ionization in MALDI and may alleviate future efforts for increasing the analyte ion yield.

Epidermal protection with cryogen spray cooling during high fluence pulsed dye laser irradiation: an ex vivo study.

PubMed

Tunnell, J W; Nelson, J S; Torres, J H; Anvari, B

2000-01-01

Higher laser fluences than currently used in therapy (5-10 J/cm(2)) are expected to result in more effective treatment of port wine stain (PWS) birthmarks. However, higher incident fluences increase the risk of epidermal damage caused by absorption of light by melanin. Cryogen spray cooling offers an effective method to reduce epidermal injury during laser irradiation. The objective of this study was to determine whether high laser incident fluences (15-30 J/cm(2)) could be used while still protecting the epidermis in ex vivo human skin samples. Non-PWS skin from a human cadaver was irradiated with a Candela ScleroPlus Laser (lambda = 585 nm; pulse duration = 1.5 msec) by using various incident fluences (8-30 J/cm(2)) without and with cryogen spray cooling (refrigerant R-134a; spurt durations: 40-250 msec). Assessment of epidermal damage was based on histologic analysis. Relatively short spurt durations (40-100 msec) protected the epidermis for laser incident fluences comparable to current therapeutic levels (8-10 J/cm(2)). However, longer spurt durations (100-250 msec) increased the fluence threshold for epidermal damage by a factor of three (up to 30 J/cm(2)) in these ex vivo samples. Results of this ex vivo study show that epidermal protection from high laser incident fluences can be achieved by increasing the cryogen spurt duration immediately before pulsed laser exposure. Copyright 2000 Wiley-Liss, Inc.

Physics of Self-Field-Dominated Plasmas.

DTIC Science & Technology

1995-03-31

plasma focus machines (APF) for different optimal levels of discharge feeding energy W, in particular for APF-20O (W <or = 200 kJ) and APF-50 (W <or= 50 kJ). The function of these APF systems was to determine, along with the data of smaller machines, the scaling laws of the emission (fluence) of ion and ion cluster beams as a function of W, ejected from the self field dominated plasma of the APF pinch. Typical ion spectra from a Thomson (parabola) spectrometer in the 80 deg direction from the electrode/pinch axis are also included

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn; Peng, Jinxin; Ai, Wensi

2016-06-28

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrastmore » to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

Collective acceleration of ions in picosecond pinched electron beams

NASA Astrophysics Data System (ADS)

Baryshnikov, V. I.; Paperny, V. L.; Shipayev, I. V.

2017-10-01

Сharacteristics of intense electron-ion beams emitted by a high-voltage (280 kV) electron accelerator with a pulse duration of 200 ps and current 5 kA are studied. The capture phenomena and the subsequent collective acceleration of multi charged ions of the cathode material by the electric field of the electron beam are observed. It is shown that the electron-ion beam diameter does not exceed 30 µm therein in the case of lighter ions, and the decay of the pinched beam occurs at a shorter distance from the cathode. It is established that the ions of the cathode material Tin+ captured by the electron beam are accelerated up to an energy of  ⩽10 MeV, and the ion fluence reaches 1017 ion cm-2 in the pulse. These ions are effectively embedded into the lattice sites of the irradiated substrate (sapphire crystal), forming the luminescent areas of the micron scale.

Investigating the Fundamentals of Molecular Depth Profiling Using Strong-field Photoionization of Sputtered Neutrals

PubMed Central

Willingham, D.; Brenes, D. A.; Winograd, N.; Wucher, A.

2010-01-01

Molecular depth profiles of model organic thin films were performed using a 40 keV C60+ cluster ion source in concert with TOF-SIMS. Strong-field photoionization of intact neutral molecules sputtered by 40 keV C60+ primary ions was used to analyze changes in the chemical environment of the guanine thin films as a function of ion fluence. Direct comparison of the secondary ion and neutral components of the molecular depth profiles yields valuable information about chemical damage accumulation as well as changes in the molecular ionization probability. An analytical protocol based on the erosion dynamics model is developed and evaluated using guanine and trehalose molecular secondary ion signals with and without comparable laser photoionization data. PMID:26269660

Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

PubMed Central

2011-01-01

Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding. PMID:21711934

Interferometric pump-probe characterization of the nonlocal response of optically transparent ion implanted polymers

NASA Astrophysics Data System (ADS)

Stefanov, Ivan L.; Hadjichristov, Georgi B.

2012-03-01

Optical interferometric technique is applied to characterize the nonlocal response of optically transparent ion implanted polymers. The thermal nonlinearity of the ion-modified material in the near-surface region is induced by continuous wave (cw) laser irradiation at a relatively low intensity. The interferometry approach is demonstrated for a subsurface layer of a thickness of about 100 nm formed in bulk polymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV and fluence in the range 1014-1017 cm-2. The laser-induced thermooptic effect in this layer is finely probed by interferometric imaging. The interference phase distribution in the plane of the ion implanted layer is indicative for the thermal nonlinearity of the near-surface region of ion implanted optically transparent polymeric materials.

SU-E-T-146: Reference Dosimetry for Protons and Light-Ion Beams Based on Graphite Calorimetry.

PubMed

Rossomme, S; Palmans, H; Thomas, R; Lee, N; Bailey, M; Shipley, D; Al-Sulaiti, L; Cirrone, P; Romano, F; Kacperek, A; Bertrand, D; Vynckier, S

2012-06-01

The IAEA TRS-398 code of practice can be applied for the measurement of absorbed dose to water under reference conditions with an ionization chamber. For protons, the combined relative standard uncertainty on those measurements is less than 2% while for light-ion beams, it is considerably larger, i.e. 3.2%, mainly due to the higher uncertainty contributions for the water to air stopping power ration and the W air-value on the beam quality correction factors kQ,Q 0 . To decrease this uncertainty, a quantification of kQ,Q 0 is proposed using a primary standard level graphite calorimeter. This work includes numerical and experimental determinations of dose conversion factors to derive dose to water from graphite calorimetry. It also reports on the first experimental data obtained with the graphite calorimeter in proton, alpha and carbon ion beams. Firstly, the dose conversion has been calculated with by Geant4 Monte-Carlo simulations through the determination of the water to graphite stopping power ratio and the fluence correction factor. The latter factor was also derived by comparison of measured ionization curves in graphite and water. Secondly, kQ,Q 0 was obtained by comparison of the dose response of ionization chambers with that of the calorimeter. Stopping power ratios are found to vary by no more than 0.35% up to the Bragg peak, while fluence correction factors are shown to increase slightly above unity close to the Bragg peak. The comparison of the calorimeter with ionization chambers is currently under analysis. For the modulated proton beam, preliminary results on W air confirm the value recommended in TRS-398. Data in both the non-modulated proton and light-ion beams indicate higher values but further investigation of heat loss corrections is needed. The application of graphite calorimetry to proton, alpha and carbon ion beams has been demonstrated successfully. Other experimental campaigns will be held in 2012. This work is supported by the BioWin program of the Wallon Government. © 2012 American Association of Physicists in Medicine.

Modification of Optical, Structural and Dielectric Properties of MeV Ions Irradiated PS/Cu Nanocomposites.

PubMed

Gavade, Chaitali; Singh, N L; Khanna, P K; Shah, Sunil

2015-12-01

In order to study structural, thermal, optical and dielectric behaviors of composites, the films of Cu/polystyrene nanocomposites were synthesized at different concentrations of Cu-nanoparticles. These polymer nanocomposites were irradiated with carbon (85 MeV) and silicon (120 MeV) ions at different fluences. The samples were characterized using different techniques viz: X-ray diffraction, UV-visible spectroscopy, differential scanning calorimetry, and impedance gain phase analyzer. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 120 MeV Si-ions, which may be attributed to radiation-induced cross-linking in polymer. Optical properties like band gap was estimated for pure polymer and nanocomposite films from their optical absorption spectra in the wavelength region 200-800 nm. It was found that the band gap value shifted to lower energy (from 4.38 eV to 3.40 eV) on doping with silver nanoparticles and also upon irradiation. Differential scanning calorimetry analysis revealed an increase in the glass transition temperature upon irradiation, which may be attributed to cross linking of polymer chain due to ion beam irradiation which is also corroborated with XRD analysis. Dependence of dielectric properties on frequency, ions and filler concentration was studied. The results revealed the enhancement in dielectric properties after doping nanoparticles and also upon irradiation. It was observed that the effect of Si-beam is more effectual than the C-beam because of large electronic energy loss of heavy ion.

Cytogenetic effects of high-energy iron ions: dependence on shielding thickness and material.

PubMed

Durante, M; George, K; Gialanella, G; Grossi, G; La Tessa, C; Manti, L; Miller, J; Pugliese, M; Scampoli, P; Cucinotta, F A

2005-10-01

We report results for chromosomal aberrations in human peripheral blood lymphocytes after they were exposed to high-energy iron ions with or without shielding at the HIMAC, AGS and NSRL accelerators. Isolated lymphocytes were exposed to iron ions with energies between 200 and 5000 MeV/nucleon in the 0.1-1-Gy dose range. Shielding materials consisted of polyethylene, lucite (PMMA), carbon, aluminum and lead, with mass thickness ranging from 2 to 30 g/cm2. After exposure, lymphocytes were stimulated to grow in vitro, and chromosomes were prematurely condensed using a phosphatase inhibitor (calyculin A). Aberrations were scored using FISH painting. The yield of total interchromosomal exchanges (including dicentrics, translocations and complex rearrangements) increased linearly with dose or fluence in the range studied. Shielding decreased the effectiveness per unit dose of iron ions. The highest RBE value was measured with the 1 GeV/nucleon iron-ion beam at NSRL. However, the RBE for the induction of aberrations apparently is not well correlated with the mean LET. When shielding thickness was increased, the frequency of aberrations per particle incident on the shield increased for the 500 MeV/nucleon ions and decreased for the 1 GeV/nucleon ions. Maximum variation at equal mass thickness was obtained with light materials (polyethylene, carbon or PMMA). Variations in the yield of chromosomal aberrations per iron particle incident on the shield follow variations in the dose per incident particle behind the shield but can be modified by the different RBE of the mixed radiation field produced by nuclear fragmentation. The results suggest that shielding design models should be benchmarked using both physics and biological data.

Multiple ion beam irradiation for the study of radiation damage in materials

NASA Astrophysics Data System (ADS)

Taller, Stephen; Woodley, David; Getto, Elizabeth; Monterrosa, Anthony M.; Jiao, Zhijie; Toader, Ovidiu; Naab, Fabian; Kubley, Thomas; Dwaraknath, Shyam; Was, Gary S.

2017-12-01

The effects of transmutation produced helium and hydrogen must be included in ion irradiation experiments to emulate the microstructure of reactor irradiated materials. Descriptions of the criteria and systems necessary for multiple ion beam irradiation are presented and validated experimentally. A calculation methodology was developed to quantify the spatial distribution, implantation depth and amount of energy-degraded and implanted light ions when using a thin foil rotating energy degrader during multi-ion beam irradiation. A dual ion implantation using 1.34 MeV Fe+ ions and energy-degraded D+ ions was conducted on single crystal silicon to benchmark the dosimetry used for multi-ion beam irradiations. Secondary Ion Mass Spectroscopy (SIMS) analysis showed good agreement with calculations of the peak implantation depth and the total amount of iron and deuterium implanted. The results establish the capability to quantify the ion fluence from both heavy ion beams and energy-degraded light ion beams for the purpose of using multi-ion beam irradiations to emulate reactor irradiated microstructures.

Optical waveguides in Nd:GdVO4 crystals fabricated by swift N3+ ion irradiation

NASA Astrophysics Data System (ADS)

Dong, Ningning; Yao, Yicun; Chen, Feng

2012-12-01

Optical planar waveguides have been manufactured in Nd:GdVO4 crystal by swift N3+ ions irradiation at fluence of 1.5 × 1014 ions/cm2. A typical "barrier"-style refractive index profile was formed and the light can be well confined in the waveguide region. The modal distribution of the guided modes obtained from numerical calculation has a good agreement with the experimental modal distribution. The measured photoluminescence spectra revealed that the fluorescence properties of the Nd3+ ions have been modified to some extent in the waveguide's volume. The propagation loss of the planar waveguide can decrease to lower than 1 dB/cm after adequate annealing.

Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing.

PubMed

Shen, Qiang; Zhou, Wei; Ran, Guang; Li, Ruixiang; Feng, Qijie; Li, Ning

2017-01-24

The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He⁺ ions with 1 × 10 17 ions/cm² fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irradiated layer distributed with fine helium bubbles was formed with a width of ~170 nm after helium ion irradiation. The size of gas bubbles increased with increasing annealing time and temperature and finally reached stable values at a given annealing temperature. According to the relationship between the bubble radii and annealing time, an empirical formula for calculating the bubble radii at the annealing temperature ranged from 600 to 1400 °C was given by fitting the experiment data. Planar bubble clusters (discs) were found to form on (0001) crystal plane at both sides of the bubble layer when the annealing temperature was at the range of 800-1200 °C. The mechanism of bubble growth during post-implantation annealing and the formation of bubble discs were also analyzed and discussed.

Amorphous surface layers in Ti-implanted Fe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knapp, J.A.; Follstaedt, D.M.; Picraux, S.T.

1979-01-01

Implanting Ti into high-purity Fe results in an amorphous surface layer which is composed of not only Fe and Ti, but also C. Implantations were carried out at room temperature over the energy range 90 to 190 keV and fluence range 1 to 2 x 10/sup 16/ at/cm/sup 2/. The Ti-implanted Fe system has been characterized using transmission electron microscopy (TEM), ion backscattering and channeling analysis, and (d,p) nuclear reaction analysis. The amorphous layer was observed to form at the surface and grow inward with increasing Ti fluence. For an implant of 1 x 10/sup 17/ Ti/cm/sup 2/ at 180more » keV the layer thickness was 150 A, while the measured range of the implanted Ti was approx. 550 A. This difference is due to the incorporation of C into the amorphous alloy by C being deposited on the surface during implantation and subsequently diffusing into the solid. Our results indicate that C is an essential constituent of the amorphous phase for Ti concentrations less than or equal to 10 at. %. For the 1 x 10/sup 17/ Ti/cm/sup 2/ implant, the concentration of C in the amorphous phase was approx. 25 at. %, while that of Ti was only approx. 3 at. %. A higher fluence implant of 2 x 10/sup 17/ Ti/cm/sup 2/ produced an amorphous layer with a lower C concentration of approx. 10 at. % and a Ti concentration of approx. 20 at. %.« less

Improvement of the High Fluence Irradiation Facility at the University of Tokyo

NASA Astrophysics Data System (ADS)

Murakami, Kenta; Iwai, Takeo; Abe, Hiroaki; Sekimura, Naoto

2016-08-01

This paper reports the modification of the High Fluence Irradiation Facility at the University of Tokyo (HIT). The HIT facility was severely damaged during the 2011 earthquake, which occurred off the Pacific coast of Tohoku. A damaged 1.0 MV tandem Cockcroft-Walton accelerator was replaced with a 1.7 MV accelerator, which was formerly used in another campus of the university. A decision was made to maintain dual-beam irradiation capability by repairing the 3.75 MV single-ended Van de Graaff accelerator and reconstructing the related beamlines. A new beamline was connected with a 200 kV transmission electron microscope (TEM) to perform in-situ TEM observation under ion irradiation.

Results of dosimetric measurements in space missions

NASA Astrophysics Data System (ADS)

Reitz, G.; Beaujean, R.; Heilmann, C.; Kopp, J.; Leicher, M.; Strauch, K.

Detector packages consisting of plastic nuclear track detectors, nuclear emulsions, and thermoluminescence detectors were exposed at different locations inside the space laboratory Spacelab and at the astronauts' body and in different sections of the MIR space station. Total dose, particle fluence rate and linear energy transfer (LET) spectra of heavy ions, number of nuclear disintegrations and fast neutron fluence rates were determined of each exposure. The dose equivalent received by the Payload specialists (PSs) were calculated from the measurements, they range from 190 muSv d^-1 to 770 muSv d^-1. Finally, a preliminary investigation of results from a particle telescope of two silicon detectors, first used in the last BIORACK mission on STS 76, is reported.

Pulse fluence dependent nanograting inscription on the surface of fused silica

NASA Astrophysics Data System (ADS)

Liang, Feng; Vallée, Réal; Leang Chin, See

2012-06-01

Pulse fluence dependent nanograting inscription on the surface of fused silica is investigated. The nanograting period is found to decrease with the increase of the incident pulse fluence. Local intensity distribution and incubation effect are responsible for the change of the nanograting period.

Fast Faraday cup for fast ion beam TOF measurements in deuterium filled plasma focus device and correlation with Lee model

NASA Astrophysics Data System (ADS)

Damideh, Vahid; Ali, Jalil; Saw, Sor Heoh; Rawat, Rajdeep Singh; Lee, Paul; Chaudhary, Kashif Tufail; Rizvi, Zuhaib Haider; Dabagh, Shadab; Ismail, Fairuz Diyana; Sing, Lee

2017-06-01

In this work, the design and construction of a 50 Ω fast Faraday cup and its results in correlation with the Lee Model Code for fast ion beam and ion time of flight measurements for a Deuterium filled plasma focus device are presented. Fast ion beam properties such as ion flux, fluence, speed, and energy at 2-8 Torr Deuterium are studied. The minimum 34 ns full width at half maximum ion signal at 12 kV, 3 Torr Deuterium in INTI PF was captured by a Faraday cup. The maximum ion energy of 67 ± 5 keV at 4 Torr Deuterium was detected by the Faraday cup. Ion time of flight measurements by the Faraday cup show consistent correlation with Lee Code results for Deuterium especially at near to optimum pressures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Anne A.; Katoh, Yutai; Snead, Mary A.

A new, fine-grain nuclear graphite, grade G347A from Tokai Carbon Co., Ltd., has been irradiated in the High Flux Isotope Reactor at Oak Ridge National Laboratory to study the materials property changes that occur when exposed to neutron irradiation at temperatures of interest for Generation-IV nuclear reactor applications. Specimen temperatures ranged from 290°C to 800 °C with a maximum neutron fluence of 40 × 10 25 n/m 2 [E > 0.1 MeV] (~30dpa). Lastly, observed behaviors include: anisotropic behavior of dimensional change in an isotropic graphite, Young's modulus showing parabolic fluence dependence, electrical resistivity increasing at low fluence and additionalmore » increase at high fluence, thermal conductivity rapidly decreasing at low fluence followed by continued degradation, and a similar plateau value of the mean coefficient of thermal expansion for all irradiation temperatures.« less

A coupled effect of nuclear and electronic energy loss on ion irradiation damage in lithium niobate

DOE PAGES

Liu, Peng; Zhang, Yanwen; Xue, Haizhou; ...

2016-01-09

Understanding irradiation effects induced by elastic energy loss to atomic nuclei and inelastic energy loss to electrons in a crystal, as well as the coupled effect between them, is a scientific challenge. Damage evolution in LiNbO 3 irradiated by 0.9 and 21 MeV Si ions at 300 K has been studied utilizing Rutherford backscattering spectrometry in channeling mode. During the low-energy ion irradiation process, damage accumulation produced due to elastic collisions is described utilizing a disorder accumulation model. Moreover, low electronic energy loss is shown to induce observable damage that increases with ion fluence. For the same electronic energy loss,more » the velocity of the incident ion could affect the energy and spatial distribution of excited electrons, and therefore effectively modify the diameter of the ion track. Furthermore, nonlinear additive phenomenon of irradiation damage induced by high electronic energy loss in pre-damaged LiNbO 3 has been observed. The result indicates that pre-existing damage induced from nuclear energy loss interacts synergistically with inelastic electronic energy loss to promote the formation of amorphous tracks and lead to rapid phase transformation, much more efficient than what is observed in pristine crystal solely induced by electronic energy loss. As a result, this synergistic effect is attributed to the fundamental mechanism that the defects produced by the elastic collisions result in a decrease in thermal conductivity, increase in the electron-phonon coupling, and further lead to higher intensity in thermal spike from intense electronic energy deposition along high-energy ion trajectory.« less

Effects of anode geometry on forward wide-angle neon ion emissions in 3.5 kJ plasma focus device by novel mega-size panorama polycarbonate image detectors

NASA Astrophysics Data System (ADS)

Sohrabi, M.; Soltani, Z.; Sarlak, Z.

2018-03-01

Forward wide-angle neon ion emissions in a 3.5 kJ plasma focus device (PFD) were studied using 5 different anode top geometries; hollow-end cylinder, solid triangle, solid hemisphere, hollow-end cone and flat-end cone. Position-sensitive mega-size panorama polycarbonate ion image detectors (MS-PCID) developed by dual-cell circular mega-size electrochemical etching (MS-ECE) systems were applied for processesing wide-angle neon ion images on MS-PCIDs exposed on the PFD cylinder top base under a single pinch shot. The images can be simply observed, analyzed and relatively quantified in terms of ion emission angular distributions even by the unaided eyes. By analysis of the forward neon ion emission images, the ion emission yields, ion emission angular distributions, iso-fluence ion contours and solid angles of ion emissions in 4π PFD space were determined. The neon ion emission yields on the PFD cylinder top base are in an increasing order ~2.1×109, ~2.2 ×109, ~2.8×109, ~2.9×109, and ~3.5×109 neon ions/shot for the 5 stated anode top geometries respectively. The panorama neon ion images as diagnosed even by the unaided eyes demonstrate the lowest and highest ion yields from the hollow-end cylinder and flat-end cone anode tops respectively. Relative dynamic qualitative neon ion spectrometry was made by the unaided eyes demonstrating relative neon ion energy as they appear. The study also demonstrates the unique power of the MS-PCID/MS-ECE imaging system as an advanced state-of-the-art ion imaging method for wide-angle dynamic parametric studies in PFD space and other ion study applications.

Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet.

PubMed

Costantini, Jean-Marc; Miro, Sandrine; Beuneu, François; Toulemonde, Marcel

2015-12-16

Pure and (Ca and Si)-substituted yttrium iron garnet (Y3Fe5O12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd3Ga5O12, or GGG) single crystal substrates were irradiated by 50 MeV (32)Si and 50 MeV (or 60 MeV) (63)Cu ions for electronic stopping powers larger than the threshold value (~4 MeV μm(-1)) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10(11)-10(16) cm(-2)) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ~10(14) cm(-2). Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10(14) cm(-2)), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ~660 cm(-1) is assigned to vibration modes of randomized bonds in tetrahedral (FeO4) units.

He behavior in Ni and Ni-based equiatomic solid solution alloy

NASA Astrophysics Data System (ADS)

Yan, Zhanfeng; Liu, Shaoshuai; Xia, Songqin; Zhang, Yong; Wang, Yugang; Yang, Tengfei

2018-07-01

In the current work, pure nickel (99.99 wt.%) and Ni-containing single phase equiatomic solid solution alloy Fe-Co-Cr-Ni were irradiated with 190 keV He ions at room temperature with different fluences and He behavior in both materials are compared. At 1 × 1017 cm-2, TEM observation reveals that only isolated and small He bubbles (1-2 nm) are formed in Fe-Co-Cr-Ni alloy while many small suspected "string"-like He bubbles are observed in nickel at the concentration peak region (5.5 at.%). When the fluence is increased to 5 × 1017 cm-2, average bubble size in nickel increases to ∼8 nm which is almost equal to that in Fe-Co-Cr-Ni, but a higher bubble density is observed in nickel. At the highest dose of 1 × 1018 cm-2, numerous surface blisters and exfoliations occur in nickel which are consistent with TEM observation, while the Fe-Co-Cr-Ni alloy only shows a slight surface blister. Bubble coarsening upon annealing at 500 °C (2 h) is observed at 5 × 1017 cm-2 in both alloys, but a significant larger bubble growth is observed in nickel, suggesting a relatively better resistance to He bubble growth for Fe-Co-Cr-Ni alloy.

Development of indigenous insulation material for superconducting magnets and study of its characteristics under influence of intense neutron irradiation

NASA Astrophysics Data System (ADS)

Sharma, Rajiv; Tanna, V. L.; Rao, C. V. S.; Abhangi, Mitul; Vala, Sudhirsinh; Sundaravel; Varatharajan, S.; Sivakumar, S.; Sasi, K.; Pradhan, S.

2017-02-01

Epoxy based glass fiber reinforced composites are the main insulation system for the superconducting magnets of fusion machines. 14MeV neutrons are generated during the DT fusion process, however the energy spectra and flux gets modified to a great extent when they reach the superconducting magnets. Mechanical properties of the GFRP insulation material is reported to degrade up to 30%. As a part of R & D activity, a joint collaboration with IGCAR, Kalpakkam has been established. The indigenous insulation material is subjected to fast neutron fluence of 1014 - 1019 n/m2 (E>0.1 MeV) in FBTR and KAMINI Reactor, India. TRIM software has been used to simulate similar kind of damage produced by neutrons by ion irradiation with 5 MeV Al ions and 3 MeV protons. Fluence of the ions was adjusted to get the same dpa. We present the test experiment of neutron irradiation of the composite material (E-glass, S-glass fiber boron free and DGEBA epoxy). The test results of tensile, inter laminar shear and electrical breakdown strength as per ASTM standards, assessment of micro-structure surface degradation before and after irradiation will be presented. MCNP simulations are carried out for neutron flux, dose and damages produced in the insulation material.