40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

NASA Astrophysics Data System (ADS)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

Reliable bonding using indium-based solders

NASA Astrophysics Data System (ADS)

Cheong, Jongpil; Goyal, Abhijat; Tadigadapa, Srinivas; Rahn, Christopher

2004-01-01

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

Reliable bonding using indium-based solders

NASA Astrophysics Data System (ADS)

Cheong, Jongpil; Goyal, Abhijat; Tadigadapa, Srinivas; Rahn, Christopher

2003-12-01

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

PubMed Central

Biswal, Rajesh; Maldonado, Arturo; Vega-Pérez, Jaime; Acosta, Dwight Roberto; Olvera, María De La Luz

2014-01-01

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered. PMID:28788118

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride.

PubMed

Biswal, Rajesh; Maldonado, Arturo; Vega-Pérez, Jaime; Acosta, Dwight Roberto; De La Luz Olvera, María

2014-07-04

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10 -3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Cross-current leaching of indium from end-of-life LCD panels.

PubMed

Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

2015-08-01

Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels. Copyright © 2015 Elsevier Ltd. All rights reserved.

Indium: bringing liquid-crystal displays into focus

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

Indium oxide/n-silicon heterojunction solar cells

DOEpatents

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Materials flow of indium in the United States in 2008 and 2009

USGS Publications Warehouse

Goonan, Thomas G.

2012-01-01

Indium is a material that has many applications. It is used by anyone who watches television or views a computer screen. It is found in solar energy arrays and in soldering applications that are required to be lead free. In 2009, about 550 metric tons (t) of indium metal was produced from primary sources world-wide; it was estimated that the United States consumed about 110 t of indium metal (20 percent of world primary production). However, when imports of consumer products that contain indium are considered, the United States consumed about 200 t of indium (36 percent of world primary production). When one considers the recovery from the low-efficiency sputtering process that coats indium-tin oxide onto glass and other surfaces, the recycling rate (within the manufacturing process that uses indium-tin oxide in flat panel displays approaches 36 percent. However, indium recovery from old scrap generated from end-of-life consumer products is not sufficiently economic to add significantly to secondary production. Between 1988 and 2010, indium prices averaged $381 per kilogram (in constant 2000 dollars). However, prices have been quite volatile (deviating from the average of $381 per kilogram by ±$199 per kilogram, a 52 percent difference from the average), reflecting short-term disequilibrium of supply and demand but also responsiveness of supply to demand. The dynamics of zinc smelting govern the primary supply of indium because indium is a byproduct of zinc smelting. Secondary indium supply, which accounts for about one-half of total indium supply, is governed by indium prices and technological advances in recovery. Indium demand is expected to grow because the number and volume of cutting edge technology applications that depend on indium are expected to grow.

Looking Down Under for a Circular Economy of Indium.

PubMed

Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

2018-02-20

Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

PubMed

Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

2016-01-01

This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

Method of manufacturing tin-doped indium oxide nanofibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Soydan; Naskar, Amit K

2017-06-06

A method of making indium tin oxide nanofibers includes the step of mixing indium and tin precursor compounds with a binder polymer to form a nanofiber precursor composition. The nanofiber precursor composition is co-formed with a supporting polymer to form a composite nanofiber having a precursor composition nanofiber completely surrounded by the supporting polymer composition. The supporting polymer composition is removed from the composite nanofiber to expose the precursor composition nanofiber. The precursor composition nanofiber is then heated in the presence of oxygen such as O.sub.2 to form indium tin oxide and to remove the binder polymer to form anmore » indium tin oxide nanofiber. A method of making metal oxide nanofibers is also disclosed.« less

Indium adhesion provides quantitative measure of surface cleanliness

NASA Technical Reports Server (NTRS)

Krieger, G. L.; Wilson, G. J.

1968-01-01

Indium tipped probe measures hydrophobic and hydrophilic contaminants on rough and smooth surfaces. The force needed to pull the indium tip, which adheres to a clean surface, away from the surface provides a quantitative measure of cleanliness.

Reflectance of metallic indium for solar energy applications

NASA Technical Reports Server (NTRS)

Bouquet, F. L.; Hasegawa, T.

1984-01-01

An investigation has been conducted in order to compile quantitative data on the reflective properties of metallic indium. The fabricated samples were of sufficiently high quality that differences from similar second-surface silvered mirrors were not apparent to the human eye. Three second-surface mirror samples were prepared by means of vacuum deposition techniques, yielding indium thicknesses of approximately 1000 A. Both hemispherical and specular measurements were made. It is concluded that metallic indium possesses a sufficiently high specular reflectance to be potentially useful in many solar energy applications.

40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE... subcategory. The provisions of this subpart are applicable to discharges resulting from the production of indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw...

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

2000-01-01

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles In Vitro

PubMed Central

Morgan, Daniel L.

2013-01-01

Indium-containing particles (ICPs) are used extensively in the microelectronics industry. Pulmonary toxicity is observed after inhalation exposure to ICPs; however, the mechanism(s) of pathogenesis is unclear. ICPs are insoluble at physiological pH and are initially engulfed by alveolar macrophages (and likely airway epithelial cells). We hypothesized that uptake of ICPs by macrophages followed by phagolysosomal acidification results in the solubilization of ICPs into cytotoxic indium ions. To address this, we characterized the in vitro cytotoxicity of indium phosphide (InP) or indium tin oxide (ITO) particles with macrophages (RAW cells) and lung-derived epithelial (LA-4) cells at 24h using metabolic (3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium bromide) and membrane integrity (lactate dehydrogenase) assays. InP and ITO were readily phagocytosed by RAW and LA-4 cells; however, the particles were much more cytotoxic to RAW cells and cytotoxicity was dose dependent. Treatment of RAW cells with cytochalasin D (CytoD) blocked particle phagocytosis and reduced cytotoxicity. Treatment of RAW cells with bafilomycin A1, a specific inhibitor of phagolysosomal acidification, also reduced cytotoxicity but did not block particle uptake. Based on direct indium measurements, the concentration of ionic indium was increased in culture medium from RAW but not LA-4 cells following 24-h treatment with particles. Ionic indium derived from RAW cells was significantly reduced by treatment with CytoD. These data implicate macrophage uptake and solubilization of InP and ITO via phagolysosomal acidification as requisite for particle-induced cytotoxicity and the release of indium ions. This may apply to other ICPs and strongly supports the notion that ICPs require solubilization in order to be toxic. PMID:23872580

MOCVD growth of gallium nitride with indium surfactant

NASA Astrophysics Data System (ADS)

Won, Dong Jin

In this thesis research, the effect of indium surfactant on Ga-polar and N-polar GaN films grown at 950 °C by MOCVD on various substrates such as Si-face SiC, bulk GaN, Si(111), and C-face SiC was studied to investigate the stress relaxation mechanism, structural, and optical properties of GaN films which were modified by the indium surfactant. The effect of indium surfactant on GaN films grown on SiC was studied first. In the 1.8 microm thick Ga-polar GaN films grown on lattice-mismatched Si-face SiC substrates utilizing indium surfactant at 950 °C, inverted hexagonal pyramid surface defects, so-called V-defects which consist of six (1011) planes, formed at threading dislocations on the GaN surface, which gave rise to the relaxation of compressive misfit stress in an elastic way. Simultaneously, enhanced surface mobility of Ga and N adatoms with indium surfactant lead to improved 2D growth, which may be contradictory to the formation of surface defects like V-defects. In order to find the driving force for V-defect formation in the presence of indium, a nucleation and growth model was developed, taking into consideration the strain, surface, and dislocation energies modified by indium surfactant. This model found that the V-defect formation can be energetically preferred since indium reduces the surface energy of the (1011) plane, which gives rise to the V-defect formation and growth that can overcome the energy barrier at the critical radius of the V-defect. These Ga-polar GaN films were found to be unintentionally doped with Si. Thus, an investigation into the effect of intentional Si doping at a constant TMIn flow rate on GaN films was also performed. Si turned out to be another important factor in the generation of V-defects because Si may be captured at the threading dislocation cores by forming Si -- N bonds, acting as a mask to locally prevent GaN growth. This behavior appeared to assist the initiation of the V-defect which enables V-defects to easily

Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys

DTIC Science & Technology

2010-03-01

OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS...Government. AFIT/GAP/ENP/10-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS Presented to...ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS Austin C Bergstrom, BS 2 nd Lieutenant, USAF

Indium sealing techniques.

NASA Technical Reports Server (NTRS)

Hochuli, U.; Haldemann, P.

1972-01-01

Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.

The Availability of Indium: The Present, Medium Term, and Long Term

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lokanc, Martin; Eggert, Roderick; Redlinger, Michael

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

Low Pressure Synthesis of Indium Phosphide,

DTIC Science & Technology

1982-04-01

UNCLASSIFIED F/G 713 M EEEEEEEEEII MEEMMMME W , 2~ h IW 𔃼 * ).I 2 MICROCOP RESOWI1OW TWS CHAT . . WROmNA RUIEJ MT STHDMS-W3-ALORMO TNDM- m &6.4. MM RO - TMS...pNode . M-V Semiconductor compound ’S.T o a.ek* !cm .. EImd’b lc a ..... . P Pocry sline large g rain .bgot of indiumn phosphide have been synthe- simed...indium temperature of 1003"C. 2. BACKGROUND .r. Indium phosphide is a compound composed of elements from the third and fifth columns of the periodic

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

NASA Technical Reports Server (NTRS)

Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

1990-01-01

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

POLAROGRAPHIC BEHAVIOUR OF INDIUM IN THE PRESENCE OF TRIHYDROXYGLUTARIC ACID (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinogradova, E.N.; An, C.

1961-09-01

The polarographic behavtor ot indium in the presence of trihydroxyglutaric acid in acid, nautral, and alkalino media was studied. The vaIue of the half-wave potental of a simple indium ion was determined in HClO/sub 4/ by the half-peak: potential during the anodic dissolutaon of and indium from an amalgam. The half-wave potential is eqia; tp 0.488 v. The effect of the concentration of trihydroxyglutaric acido on the E/sub 1/2/ of indium was studied. It was found that the regular shift of E/sub 1/2/ on changing the concentration of trihydroxyglutaric acid is observed only at pH 4 and pH ll. Themore » coordination number p = 2 and the unstability constant for the indium-trihydroxyglutaric aeid eonnplex at pH 4 were found. K (mean) is (9.73 plus or minus 0.82) x 10/sup - 11/. It was established that the process of indium reduction at pH 11 is irreversible. A method was suggested for the polarographic determination of indium and cadmium, when present together, in trihydroxyglutaric acid at pH 3 and pH 9. (auth)« less

Quantification of indium in steel using PIXE

NASA Astrophysics Data System (ADS)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J. C.

1989-04-01

The quantitative analysis of steel for endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important.

Enhanced optical properties due to indium incorporation in zinc oxide nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S.; Mukherjee, S.; Sarkar, K.

Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 10{sup 19 }cm{sup −3} for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurementsmore » confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.« less

Method for enhancing the solubility of boron and indium in silicon

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2002-01-01

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Synthesis and decomposition of a novel carboxylate precursor to indium oxide

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

1994-01-01

Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

Method for forming indium oxide/n-silicon heterojunction solar cells

DOEpatents

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Occult purulent pericarditis detected by indium-111 leukocyte imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenberg, M.L.; Niebulski, H.I.; Uretsky, B.F.

1984-05-01

Leukocyte imaging with indium-111 is a relatively new technique which, to this point in time, has been discussed almost exclusively in the radiologic literature. Although this procedure has been used mainly to detect intra-abdominal infection, the thorax is routinely imaged along with the abdomen, and therefore detection of cardiac disease may be feasible. This case report is of a young woman after liver transplantation who developed occult purulent pericarditis initially detected by a leukocyte scan with indium-111. This case demonstrates that striking pericardial uptake on a whole-body indium-111 leukocyte scan can occur with purulent pericarditis, and it reemphasizes how insidiouslymore » purulent pericarditis may present in an immunosuppressed patient.« less

Effect of impurity on high pressure behavior of nano indium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chitnis, Abhishek, E-mail: abhishekchitnis87@gmail.com; Garg, Nandini; Mishra, A. K.

2015-06-24

Angle dispersive x-ray diffraction studies were carried out on a mixture of nano particles of indium titanate, indium oxide, and disordered TiO{sub 2} upto pressures of ∼ 45 GPa. Our studies show that indium titanate undergoes a partial decomposition to its constituent high pressure oxides. However, concomitantly a very small fraction of indium titanate transforms to a denser phase at ∼ 27.5 GPa. This transformation to new phase was found to be irreversible. At this pressure even cubic In{sub 2}O{sub 3} transformed to the In{sub 2}O{sub 3} (II) (iso-structural to Rh{sub 2}O{sub 3} (II)) phase, without any signature of themore » intermediate corundum phase. The high pressure In{sub 2}O{sub 3} (II) phase transforms to the corundum structure on release of pressure. These studies indicate that the presence of a large fraction of seed impurities could have facilitated the decomposition of indium titanate into its constituent oxides at the cost of its incomplete transformation to the high pressure denser phase.« less

Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Das, Rupali; Soni, R. K.

2018-05-01

Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate

Junction characteristics of indium tin oxide/indium phosphide solar cells

NASA Astrophysics Data System (ADS)

Sheldon, P.; Ahrenkiel, R. K.; Hayes, R. E.; Russell, P. E.; Nottenburg, R. N.; Kazmerski, L. L.

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12 percent at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. We believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ringleb, F.; Eylers, K.; Teubner, Th.

2016-03-14

A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Basedmore » on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.« less

Influence of nitrogen on magnetic properties of indium oxide

NASA Astrophysics Data System (ADS)

Ashok, Vishal Dev; De, S. K.

2013-07-01

Magnetic properties of indium oxide (In2O3) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH4Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In2O3. Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH4Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH4Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation.

Research on the effect of alkali roasting of copper dross on leaching rate of indium

NASA Astrophysics Data System (ADS)

Dafang, Liu; Fan, Xingxiang; Shi, Yifeng; Yang, Kunbin

2017-11-01

The byproduct copper dross produced during refining crude lead was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectrometer (XRF), which showed that copper dross mainly contained lead, copper, zinc, arsenic, antimony, bismuth, sulfur and a small amount of indium and silver etc. The mineralogical phase change of oxidation roasting of copper dross by adding sodium hydroxide was analyzed with the help of XRD and SEM. The effects of water leaching, ratio of sodium hydroxide, roasting time, and roasting temperature on leaching rate of indium were investigated mainly. The experimental results showed that phase of lead metal and sulfides of lead, copper and zinc disappeared after oxidation roasting of copper dross by adding sodium hydroxide, new phase of oxides of lead, copper, zinc and sodium salt of arsenic and antimony appeared. Water leaching could remove arsenic, and acid leaching residue obtained was then leached with acid. The leaching rate of indium was higher 6.98% compared with alkali roasting of copper dross-acid leaching. It showed that removing arsenic by water leaching and acid leaching could increase the leaching rate of indium and be beneficial to reducing subsequent acid consumption of extracting indium by acid leaching. The roasting temperature had a significant effect on the leaching rate of indium, and leaching rate of indium increased with the rise of roasting temperature. When roasting temperature ranged from 450°C to 600°C, leaching rate of indium increased significantly with the rise of roasting temperature. When roasting temperature rose from 450°C to 600°C, leaching rate of indium increased by 60.29%. The amount of sodium hydroxide had an significant effect on the leaching rate of indium, and the leaching of indium increased with the increase of the amount of sodium hydroxide, and the leaching rate of indium was obviously higher than that of copper dross blank roasting and acid leaching.

Optimal design study of high efficiency indium phosphide space solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

Adsorption of collagen to indium oxide nanoparticles and infrared emissivity study thereon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou Yuming; Shan Yun; Sun Yanqing

Adsorption of collagen to indium oxide nanoparticles was carried out in water-acetone solution at volumetric ratio of 1:1 with pH value varying from 3.2 to 9.3. As indicated by TGA, maximum collagen adsorption to indium oxide nanoparticles occurred at pH of 3.2. It was proposed that noncovalent interactions such as hydrogen bonding, hydrophilic and electrostatic interactions made main contributions to collagen adsorption. The IR emissivity values (8-14 {mu}m) of collagen-adsorbed indium oxide nanoparticles decreased significantly compared to either pure collagen or indium oxide nanoparticles possibly due to the interfacial interactions between collagen and indium oxide nanoparticles. And the lowest infraredmore » emissivity value of 0.587 was obtained at collagen adsorption of 1.94 g/100 g In{sub 2}O{sub 3}. On the chance of improved compatibility with organic adhesives, the chemical activity of adsorbed collagen was further confirmed by grafting copolymerization with methyl methacrylate by formation of polymer shell outside, as evidenced by IR spectrum and transmission electron microscopy.« less

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozhukhov, Anton; Volodin, Vladimir; Novosibirsk State University, Novosibirsk 630090

2015-04-14

In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 × 10{sup −3} to 4 × 10{sup −2} Ω cm.

13 CFR 120.430 - What conveyances are covered by §§ 120.430 through 120.435?

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false What conveyances are covered by §§ 120.430 through 120.435? 120.430 Section 120.430 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Other Conveyances § 120.430 What conveyances are covered by §§ 120.430...

13 CFR 120.430 - What conveyances are covered by §§ 120.430 through 120.435?

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false What conveyances are covered by §§ 120.430 through 120.435? 120.430 Section 120.430 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Other Conveyances § 120.430 What conveyances are covered by §§ 120.430...

The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

USGS Publications Warehouse

White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

2017-01-01

Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

Status of indium phosphide solar cell development at Spire

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

1987-01-01

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, Madhvendra Nath, E-mail: ommadhav27@gmail.com

2015-06-24

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom ofmore » conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.« less

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath

2015-06-01

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In32-xSnxO48+x/2; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

Indium nanowires at the silicon surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru; Sheglov, D. V.; Latyshev, A. V.

2016-07-15

Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. The transfer of indium from the probe of the atomic-force microscope onto the silicon surface is initiated by applying a potential between the probe and the surface as they approach each other to spacings, at which the mutual repulsive force is ~10{sup –7} N. The conductivity of the nanowires ranges from 7 × 10{sup –3} to 4 × 10{sup –2} Ω cm, which is several orders ofmore » magnitude lower than that in the case of the alternative technique of heat transfer.« less

Mobility of indium on the ZnO(0001) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinhold, R.; Reeves, R. J.; Allen, M. W.

2015-02-02

The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentionalmore » In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.« less

Plasma Treatment to Remove Carbon from Indium UV Filters

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

2012-01-01

The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2000-01-01

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

NASA Astrophysics Data System (ADS)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Enantioselective and Regioselective Indium(III)-Catalyzed Addition of Pyrroles to Isatins

PubMed Central

Gutierrez, Elisa G.; Wong, Casey J.; Sahin, Aziza H.

2011-01-01

The indium(III)-catalyzed enantioselective and regioselective addition of pyrroles to isatins is described. The effects of metal and solvent on the reactivity and selectivity are compared and discussed, demonstrating that the indium(III)-indapybox complex provides the most effective catalyst. A case of divergent reactivity between pyrroles and indoles is presented. PMID:21992567

Thermodynamic properties of uranium in liquid gallium, indium and their alloys

NASA Astrophysics Data System (ADS)

Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Osipenko, A. G.

2015-09-01

Activity, activity coefficients and solubility of uranium was determined in gallium, indium and gallium-indium alloys containing 21.8 (eutectic), 40 and 70 wt.% In. Activity was measured at 573-1073 K employing the electromotive force method, and solubility between room temperature (or the alloy melting point) and 1073 K employing direct physical measurements. Activity coefficients were obtained from the difference of experimentally determined temperature dependencies of uranium activity and solubility. Intermetallic compounds formed in the respective alloys were characterized using X-ray diffraction. Partial and excess thermodynamic functions of uranium in the studied alloys were calculated. Liquidus lines in U-Ga and U-In phase diagrams from the side rich in gallium or indium are proposed.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices.

PubMed

Lin, Qingfeng; Sarkar, Debarghya; Lin, Yuanjing; Yeung, Matthew; Blankemeier, Louis; Hazra, Jubin; Wang, Wei; Niu, Shanyuan; Ravichandran, Jayakanth; Fan, Zhiyong; Kapadia, Rehan

2017-05-23

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

Early Changes in Clinical, Functional, and Laboratory Biomarkers in Workers at Risk of Indium Lung Disease

PubMed Central

Virji, M. Abbas; Trapnell, Bruce C.; Carey, Brenna; Healey, Terrance; Kreiss, Kathleen

2014-01-01

Rationale: Occupational exposure to indium compounds, including indium–tin oxide, can result in potentially fatal indium lung disease. However, the early effects of exposure on the lungs are not well understood. Objectives: To determine the relationship between short-term occupational exposures to indium compounds and the development of early lung abnormalities. Methods: Among indium–tin oxide production and reclamation facility workers, we measured plasma indium, respiratory symptoms, pulmonary function, chest computed tomography, and serum biomarkers of lung disease. Relationships between plasma indium concentration and health outcome variables were evaluated using restricted cubic spline and linear regression models. Measurements and Main Results: Eighty-seven (93%) of 94 indium–tin oxide facility workers (median tenure, 2 yr; median plasma indium, 1.0 μg/l) participated in the study. Spirometric abnormalities were not increased compared with the general population, and few subjects had radiographic evidence of alveolar proteinosis (n = 0), fibrosis (n = 2), or emphysema (n = 4). However, in internal comparisons, participants with plasma indium concentrations ≥ 1.0 μg/l had more dyspnea, lower mean FEV1 and FVC, and higher median serum Krebs von den Lungen-6 and surfactant protein-D levels. Spline regression demonstrated nonlinear exposure response, with significant differences occurring at plasma indium concentrations as low as 1.0 μg/l compared with the reference. Associations between health outcomes and the natural log of plasma indium concentration were evident in linear regression models. Associations were not explained by age, smoking status, facility tenure, or prior occupational exposures. Conclusions: In indium–tin oxide facility workers with short-term, low-level exposure, plasma indium concentrations lower than previously reported were associated with lung symptoms, decreased spirometric parameters, and increased serum

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.

2005-01-01

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

Effect of indium addition in U-Zr metallic fuel on lanthanide migration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yeon Soo; Wiencek, T.; O'Hare, E.

Advanced fast reactor concepts to achieve ultra-high burnup (~50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys wasmore » performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.« less

Exposure Potential and Health Impacts of Indium and Gallium, Metals Critical to Emerging Electronics and Energy Technologies.

PubMed

White, Sarah Jane O; Shine, James P

2016-12-01

The rapid growth of new electronics and energy technologies requires the use of rare elements of the periodic table. For many of these elements, little is known about their environmental behavior or human health impacts. This is true for indium and gallium, two technology critical elements. Increased environmental concentrations of both indium and gallium create the potential for increased environmental exposure, though little is known about the extent of this exposure. Evidence is mounting that indium and gallium can have substantial toxicity, including in occupational settings where indium lung disease has been recognized as a potentially fatal disease caused by the inhalation of indium particles. This paper aims to review the basic chemistry, changing environmental concentrations, potential for human exposure, and known health effects of indium and gallium.

An evaluation of the potential yield of indium recycled from end-of-life LCDs: A case study in China.

PubMed

Wang, Hengguang; Gu, Yifan; Wu, Yufeng; Zhang, Yi-Nan; Wang, Wei

2015-12-01

With the advances in electronics and information technology, China has gradually become the largest consumer of household appliances (HAs). Increasingly, end-of-life (EOL) HAs are generated in China. EOL recycling is a promising strategy to reduce dependence on virgin production, and indium is one of the recycled substances. The potential yield of indium recycling has not been systematically evaluated in China thus far. This paper estimates the potential yield of recycled indium from waste liquid crystal displays (LCDs) in China during the period from 2015 to 2030. The quantities of indium that will be used to produce LCDs are also predicted. The estimates focus on the following three key LCD waste sources: LCD TVs, desktop computers and portable computers. The results show that the demand for indium will be increasing in the near future. It is expected that 350 tonnes of indium will be needed to produce LCDs in China in 2035. The indium recycled from EOL LCDs, however, is much less than the demand and only accounts for approximately 48% of the indium demand. The sustainable index of indium is always less than 0.5. Therefore, future indium recycling efforts should focus on the development of recycling technology and the improvement of the relevant policy. Copyright © 2015 Elsevier Ltd. All rights reserved.

Template synthesis of indium nanowires using anodic aluminum oxide membranes.

PubMed

Chen, Feng; Kitai, Adrian H

2008-09-01

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

Indium oxide inverse opal films synthesized by structure replication method

NASA Astrophysics Data System (ADS)

Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

2016-04-01

We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

Optimization of Indium Bump Morphology for Improved Flip Chip Devices

NASA Technical Reports Server (NTRS)

Jones, Todd J.; Nikzad, Shouleh; Cunningham, Thomas J.; Blazejewski, Edward; Dickie, Matthew R.; Hoenk, Michael E.; Greer, Harold F.

2011-01-01

Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

NASA Astrophysics Data System (ADS)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

On the impact of indium distribution on the electronic properties in InGaN nanodisks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benaissa, M., E-mail: benaissa.um5@gmail.com, E-mail: benaissa@fsr.ac.ma; Sigle, W.; Aken, P. A. van

2015-03-09

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations—plasmons—at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening.more » In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.« less

Recalibration of indium foil for personnel screening in criticality accidents.

PubMed

Takada, C; Tsujimura, N; Mikami, S

2011-03-01

At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident.

Indium-saving effect and physical properties of transparent conductive multilayers

NASA Astrophysics Data System (ADS)

Kawamura, M.; Kiba, T.; Abe, Y.; Kim, K. H.

2018-03-01

Indium-free transparent conductive multilayer structures consisting of top and bottom MoO3 layers and an Ag interlayer (MoO3/Ag/MoO3; MAM) are deposited onto glass substrates by vacuum evaporation. The transmittance and sheet resistance of the structures are evaluated, and the optimum structure is determined to be MAM (20/14/30 nm) as it shows the best figure of merit (FOM), which is used as the index for transparent conductive films, with a value of 6.2 × 10-3 Ω-1. To further improve the performance of the films, we attempt to fabricate a multilayer consisting of MoO3 and indium zinc oxide (IZO), based on previous results. The obtained IAM (30/14/50 nm) multilayer shows an FOM higher than that of the MAM, with a value of 32 × 10-3 Ω-1. Moreover, it reduces the amount of required indium as compared with the IZO/Ag/IZO multilayer.

High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kyle, Erin C. H.; Kaun, Stephen W.; Wu, Feng; Bonef, Bastien; Speck, James S.

2016-11-01

InAlN grown by plasma-assisted molecular beam epitaxy often contains a honeycomb microstructure. The honeycomb microstructure consists of 5-10 nm diameter aluminum-rich regions which are surrounded by indium-rich regions. Layers without this microstructure were previously developed for nominally lattice-matched InAlN and have been developed here for higher indium content InAlN. In this study, InAlN was grown in a nitrogen-rich environment with high indium to aluminum flux ratios at low growth temperatures. Samples were characterized by high-resolution x-ray diffraction, atomic force microscopy, high-angle annular dark-field scanning transmission electron microscopy, and atom probe tomography. Atomic force microscopy showed InAlN layers grown at temperatures below 450 °C under nitrogen-rich conditions were free of droplets. InAlN films with indium contents up to 81% were grown at temperatures between 410 and 440 °C. High-angle annular dark-field scanning transmission electron microscopy and atom probe tomography showed no evidence of honeycomb microstructure for samples with indium contents of 34% and 62%. These layers are homogeneous and follow a random alloy distribution. A growth diagram for InAlN of all indium contents is reported.

Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

PubMed Central

Gustafsson, Anna M. K.; Björefors, Fredrik; Steenari, Britt-Marie

2015-01-01

Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode), respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective. PMID:26347901

Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films

NASA Astrophysics Data System (ADS)

Al Garni, S. E.; Qasrawi, A. F.

In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 μm, the thickness of the nanosandwiched Indium thin films was varied in the range of 25-100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs ∼70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50-100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains.

Indium-111 labeled anti-melanoma monoclonal antibodies

DOEpatents

Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

1984-04-30

A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

Immune stimulation following dermal exposure to unsintered indium tin oxide

PubMed Central

Brock, Kristie; Anderson, Stacey E.; Lukomska, Ewa; Long, Carrie; Anderson, Katie; Marshall, Nikki; Meade, B. Jean

2015-01-01

In recent years, several types of pulmonary pathology, including alveolar proteinosis, fibrosis, and emphysema, have been reported in workers in the indium industry. To date, there remains no clear understanding of the underlying mechanism(s). Pulmonary toxicity studies in rats and mice have demonstrated the development of mediastinal lymph node hyperplasia and granulomas of mediastinal lymph nodes and bronchus-associated lymphoid tissues following exposure to indium tin oxide. Given the association between exposure to other metals and the development of immune-mediated diseases, these studies were undertaken to begin to investigate the immuno-modulatory potential of unsintered indium tin oxide (uITO) in a mouse model. Using modifications of the local lymph node assay, BALB/c mice (five animals/group) were exposed topically via intact or breached skin or injected intradermally at the base of the ear pinnae with either vehicle or increasing concentrations 2.5–10% uITO (90:10 indium oxide/tin oxide, particle size <50 nm). Dose-responsive increases in lymphocyte proliferation were observed with a calculated EC3 of 4.7% for the intact skin study. Phenotypic analysis of draining lymph node cells following intradermal injection with 5% uITO yielded a profile consistent with a T-cell-mediated response. These studies demonstrate the potential for uITO to induce sensitization and using lymphocyte proliferation as a biomarker of exposure, and demonstrate the potential for uITO to penetrate both intact and breached skin. PMID:24164313

The mobility of indium and gallium in groundwater systems: constraining the role of sorption in sand column experiments

NASA Astrophysics Data System (ADS)

Dror, I.; Ringering, K.; Yecheskel, Y.; Berkowitz, B.

2017-12-01

The mobility of indium and gallium in groundwater environments was studied via laboratory experiments using quartz sand as a porous medium. Indium and gallium are metals of very low abundance in the Earth's crust and, correspondingly, the biosphere is only adapted to very small concentrations of these elements. However, in modern semiconductor industries, both elements play a central role and are incorporated in devices of mass production such as smartphones and digital cameras. The resulting considerable increase in production, use and discharge of indium and gallium throughout the last two decades, with a continuous and fast increase in the near future, raises questions regarding the fate of both elements in the environment. However, the transport behavior of these two metals in soils and groundwater systems remains poorly understood to date. Because of the low solubility of both elements in aqueous solutions, trisodium citrate was used as a complexation agent to stabilize the solutions, enabling investigation of the transport of these metals at neutral pH. Column experiments showed different binding capacities for indium and gallium, where gallium is much more mobile compared to indium and both metals are substantially retarded in the column. Different affinities were also confirmed by examining sorption isotherms of indium and gallium in equilibrium batch systems. The effect of natural organic matter on the mobility of indium and gallium was also studied, by addition of humic acid. For both metals, the presence of humic acid affects the sorption dynamics: for indium, sorption is strongly inhibited leading to much higher mobility, whereas gallium showed a slightly higher sorption affinity and very similar mobility compared to the same setup without humic acid addition. However, in all cases, the binding capacity of gallium to quartz is much weaker than that of indium. These results are consistent with the assumption that indium and gallium form different types

Indium antimonide large-format detector arrays

NASA Astrophysics Data System (ADS)

Davis, Mike; Greiner, Mark

2011-06-01

Large format infrared imaging sensors are required to achieve simultaneously high resolution and wide field of view image data. Infrared sensors are generally required to be cooled from room temperature to cryogenic temperatures in less than 10 min thousands of times during their lifetime. The challenge is to remove mechanical stress, which is due to different materials with different coefficients of expansion, over a very wide temperature range and at the same time, provide a high sensitivity and high resolution image data. These challenges are met by developing a hybrid where the indium antimonide detector elements (pixels) are unconnected islands that essentially float on a silicon substrate and form a near perfect match to the silicon read-out circuit. Since the pixels are unconnected and isolated from each other, the array is reticulated. This paper shows that the front side illuminated and reticulated element indium antimonide focal plane developed at L-3 Cincinnati Electronics are robust, approach background limited sensitivity limit, and provide the resolution expected of the reticulated pixel array.

Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body

NASA Astrophysics Data System (ADS)

Amano, Takaaki; Koga, Kazunori; Sarinont, Thapanut; Seo, Hyunwoong; Itagaki, Naho; Shiratani, Masaharu; Kitazaki, Satoshi; Hirata, Miyuki; Nakatsu, Yoshimichi; Tanaka, Akiyo

2015-09-01

Nanoparticles can be employed for biomedical applications such as biomarkers, drug delivery systems, and cancer therapies. They are, however, pointed out their adverse effects on human body. Here, we synthesed indium-containing nanoparticles using discharge plasmas with indium electrodes immersed in DI water and administrated nanoparticles to rats to analyze their kinetics in living body. The discharge power was 5.1 W. The electron density is 5x1017/cm3 deduced from Stark broadening of hydrogen lines. TEM observation shows the mean size of primary nanoparticles is 7 nm. The nanoparticles are indium crystalline and indium hydroxide crystalline. The synthesized nanoparticles and purchased nanoparticles (In2O3, <100nm) were administrated to rats using subcutaneous injection. Indium of 166.7 g/day (synthesized) and of 27.8 g/day (purchased) are detected from the urine at 12 weeks after the administration. Synthesized nanoparticles dispersed in water are useful for analyzing kinetics of nanoparticles in living body. Work partly supported by KAKENHI.

Functionalization of indium-tin-oxide electrodes by laser-nanostructured gold thin films for biosensing applications

NASA Astrophysics Data System (ADS)

Grochowska, Katarzyna; Siuzdak, Katarzyna; Karczewski, Jakub; Śliwiński, Gerard

2015-12-01

The production and properties of the indium-tin-oxide (ITO) electrodes functionalized by Au nanoparticle (NP) arrays of a relatively large area formed by pulsed laser nanostructuring of thin gold films are reported and discussed. The SEM inspection of modified electrodes reveals the presence of the nearly spherical and disc-shaped particles of dimensions in the range of 40-120 nm. The NP-array geometry can be controlled by selection of the laser processing conditions. It is shown that particle size and packing density of the array are important factors which determine the electrode performance. In the case of NP-modified electrodes the peak current corresponding to the glucose direct oxidation process shows rise with increasing glucose concentration markedly higher comparing to the reference Au disc electrode. The detection limit reaches 12 μM and linear response of the sensor is observed from 0.1 to 47 mM that covers the normal physiological range of the blood sugar detection.

Evaluation of hydrogen radical treatment for indium surface oxide removal and analysis of re-oxidation behavior

NASA Astrophysics Data System (ADS)

Furuyama, Kohta; Yamanaka, Kazuyuki; Higurashi, Eiji; Suga, Tadatomo

2018-02-01

Indium is a commonly used metal for sealing, bonding, and soldering due to its good malleability and ductility even at cryogenic temperatures. The effects of hydrogen radical treatment on indium surface oxide removal were evaluated by the spreading ratio test of indium balls (diameter, 300 µm purity, 99.99%). It was found that hydrogen radical treatment longer than 20 s at temperatures higher than 170 °C results in successful surface oxide removal. X-ray photoelectron spectroscopy analysis was carried out to study the re-oxidation behavior after treatment, and it was found that hydrogen radical treatment slows down the re-oxidation of indium compared with surface oxide removal realized by physical bombardment with an argon fast atom beam.

False positive indium-111 white blood cell scan in a closed clavicle fracture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, R.J.; Gordon, L.

1988-01-01

Aggressive treatment of the multiply injured patient often requires early fixation of many fractures, some of which may be open. Often, patients develop postoperative fevers requiring a thorough workup to rule out infection. Recently, indium-111 white blood cell (WBC) imaging has become a valuable adjunct in the diagnosis of acute infection. The patient described had a simple, closed clavicle fracture with markedly increased activity on an indium-111 WBC scan obtained for fever workup. This subsequently proved to be a normal, healing, noninfected fracture by other diagnostic techniques. Noninfected, simple closed fractures should be added to the list of causes formore » a false-positive indium-111 WBC scan.« less

Low-temperature mechanical dissipation of thermally evaporated indium film for use in interferometric gravitational wave detectors

NASA Astrophysics Data System (ADS)

Murray, Peter G.; Martin, Iain W.; Cunningham, Liam; Craig, Kieran; Hammond, Giles D.; Hofmann, Gerd; Hough, James; Nawrodt, Ronny; Reifert, David; Rowan, Sheila

2015-06-01

Indium bonding is under consideration for use in the construction of cryogenic mirror suspensions in future gravitational wave detectors. This paper presents measurements of the mechanical loss of a thermally evaporated indium film over a broad range of frequencies and temperatures. It provides an estimate of the resulting thermal noise at 20 K for a typical test mass geometry for a cryogenic interferometric gravitational wave detector from an indium layer between suspension elements.

Evaluation of musculoskeletal sepsis with indium-111 white blood cell imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouzounian, T.J.; Thompson, L.; Grogan, T.J.

The detection of musculoskeletal sepsis, especially following joint replacement, continues to be a challenging problem. Often, even with invasive diagnostic evaluation, the diagnosis of infection remains uncertain. This is a report on the first 55 Indium-111 white blood cell (WBC) images performed in 39 patients for the evaluation of musculoskeletal sepsis. There were 40 negative and 15 positive Indium-111 WBC images. These were correlated with operative culture and tissue pathology, aspiration culture, and clinical findings. Thirty-eight images were performed for the evaluation of possible total joint sepsis (8 positive and 30 negative images); 17 for the evaluation of nonarthroplasty-related musculoskeletalmore » sepsis (7 positive and 10 negative images). Overall, there were 13 true-positive, 39 true-negative, two false-positive, and one false-negative images. Indium-111 WBC imaging is a sensitive and specific means of evaluating musculoskeletal sepsis, especially following total joint replacement.« less

Equation of state of liquid Indium under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huaming, E-mail: huamingli@gatech.edu, E-mail: mo.li@gatech.edu; Li, Mo, E-mail: huamingli@gatech.edu, E-mail: mo.li@gatech.edu; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332

2015-09-15

We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids,more » these detailed predictions are yet to be confirmed by further experiment.« less

Recycling of indium from waste LCD: A promising non-crushing leaching with the aid of ultrasonic wave.

PubMed

Zhang, Kaihua; Li, Bin; Wu, Yufeng; Wang, Wei; Li, Rubing; Zhang, Yi-Nan; Zuo, Tieyong

2017-06-01

The tremendous amount of end-of-life liquid crystal displays (LCDs) has become one of the prominent sources of waste electrical and electronic equipment (WEEE) in recent years. Despite the necessity of safe treatment, recycling indium is also a focus of waste LCD treatment because of the scarcity of indium. Based on the analyses of the structure of Indium Tin Oxide (ITO) glass, crushing is demonstrated to be not required. In the present research, a complete non-crushing leaching method was firstly adopted to recycle indium from waste LCDs, and the ultrasonic waves was applied in the leaching process. The results demonstrated that indium can be leached efficiently with even a low concentration of chloride acid (HCl) without extra heating. About 96.80% can be recovered in 60mins, when the ITO glass was leached by 0.8MHCl with an enhancement of 300W ultrasonic waves. The indium leaching process is abridged free from crushing, and proves to be of higher efficiency. In addition, the ultrasonic wave influence on leaching process was also explained combing with micron-scale structure of ITO glass. Copyright © 2017 Elsevier Ltd. All rights reserved.

Extraction equilibrium of indium(III) from nitric acid solutions by di(2-ethylhexyl)phosphoric acid dissolved in kerosene.

PubMed

Tsai, Hung-Sheng; Tsai, Teh-Hua

2012-01-04

The extraction equilibrium of indium(III) from a nitric acid solution using di(2-ethylhexyl) phosphoric acid (D2EHPA) as an acidic extractant of organophosphorus compounds dissolved in kerosene was studied. By graphical and numerical analysis, the compositions of indium-D2EHPA complexes in organic phase and stoichiometry of the extraction reaction were examined. Nitric acid solutions with various indium concentrations at 25 °C were used to obtain the equilibrium constant of InR₃ in the organic phase. The experimental results showed that the extraction distribution ratios of indium(III) between the organic phase and the aqueous solution increased when either the pH value of the aqueous solution and/or the concentration of the organic phase extractant increased. Finally, the recovery efficiency of indium(III) in nitric acid was measured.

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2001-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2002-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

NASA Astrophysics Data System (ADS)

Deshpande, Manisha; Maske, Dilip; Choudhari, Rashmi; Arora, Brij Mohan; Gadkari, Dattatray

2016-05-01

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

PubMed

Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

2016-04-01

Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology. Copyright © 2016 Elsevier Ltd. All rights reserved.

Oxygen-free atomic layer deposition of indium sulfide

DOEpatents

Martinson, Alex B.; Hock, Adam S.; McCarthy, Robert; Weimer, Matthew S.

2016-07-05

A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Yao; National Institute for Materials Science, Tsukuba, Ibaraki 305-0044; Sun, Huabin

2015-05-15

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, whichmore » influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.« less

Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whiddon, R.; Zhou, B.; Borggren, J.

2015-09-15

Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 1/2} and 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2}more » transitions as a function of the calculated TMI seeding concentration over a range of 2–45 ppm. The response was found to be linear over the range 3–22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.« less

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

NASA Astrophysics Data System (ADS)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshpande, Manisha, E-mail: manishauj@gmail.com; Department of Physics, Mithibai College, Vile Parle; Maske, Dilip

2016-05-06

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS.more » The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.« less

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazioti, C.; Kehagias, Th.; Pavlidou, E.

2015-10-21

We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults andmore » threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.« less

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

NASA Astrophysics Data System (ADS)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Indium phosphide space solar cell research: Where we are and where we are going

NASA Technical Reports Server (NTRS)

Jain, R. K.; Flood, D. J.; Weinberg, Irving

1995-01-01

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

(Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2001-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Visible light electroluminescent diodes of indium-gallium phosphide

NASA Technical Reports Server (NTRS)

Clough, R.; Richman, D.; Tietjen, J.

1970-01-01

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Atmospheric Deposition of Indium in the Northeastern United States: Flux and Historical Trends.

PubMed

White, Sarah Jane O; Keach, Carrie; Hemond, Harold F

2015-11-03

The metal indium is an example of an increasingly important material used in electronics and new energy technologies, whose environmental behavior and toxicity are poorly understood despite increasing evidence of detrimental health impacts and human-induced releases to the environment. In the present work, the history of indium deposition from the atmosphere is reconstructed from its depositional record in an ombrotrophic bog in Massachusetts. A novel freeze-coring technique is used to overcome coring difficulties posed by woody roots and peat compressibility, enabling retrieval of relatively undisturbed peat cores dating back more than a century. Results indicate that long-range atmospheric transport is a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak fluxes of 1.9 ng/cm2/yr. Atmospheric deposition to the bog began increasing in the late 1800s/early 1900s, and peaked in the early 1970s. A comparison of deposition data with industrial production and emissions estimates suggests that both coal combustion and the smelting of lead, zinc, copper, and tin sulfides are sources of indium to the atmosphere in this region. Deposition appears to have decreased considerably since the 1970s, potentially a visible effect of particulate emissions controls instated in North America during that decade.

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles as in vitro Correlates to Pulmonary Toxicity in vivo

PubMed Central

Gwinn, William M.; Qu, Wei; Bousquet, Ronald W.; Price, Herman; Shines, Cassandra J.; Taylor, Genie J.; Waalkes, Michael P.; Morgan, Daniel L.

2015-01-01

Macrophage-solubilized indium-containing particles (ICPs) were previously shown in vitro to be cytotoxic. In this study, we compared macrophage solubilization and cytotoxicity of indium phosphide (InP) and indium-tin oxide (ITO) with similar particle diameters (∼1.5 µm) and then determined if relative differences in these in vitro parameters correlated with pulmonary toxicity in vivo. RAW 264.7 macrophages were treated with InP or ITO particles and cytotoxicity was assayed at 24 h. Ionic indium was measured in 24 h culture supernatants. Macrophage cytotoxicity and particle solubilization in vitro were much greater for InP compared with ITO. To correlate changes in vivo, B6C3F1 mice were treated with InP or ITO by oropharyngeal aspiration. On Days 14 and 28, bronchoalveolar lavage (BAL) and pleural lavage (PL) fluids were collected and assayed for total leukocytes. Cell differentials, lactate dehydrogenase activity, and protein levels were also measured in BAL. All lavage parameters were greatly increased in mice treated with InP compared with ITO. These data suggest that macrophage solubilization and cytotoxicity of some ICPs in vitro are capable of predicting pulmonary toxicity in vivo. In addition, these differences in toxicity were observed despite the two particulate compounds containing similar amounts of indium suggesting that solubilization, not total indium content, better reflects the toxic potential of some ICPs. Soluble InCl3 was shown to be more cytotoxic than InP to macrophages and lung epithelial cells in vitro further suggesting that ionic indium is the primary cytotoxic component of InP. PMID:25527823

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

[Mechanism of renal elimination of 2 elements of group IIIA of the periodic table : aluminum and indium].

PubMed

Galle, P

1981-01-05

Aluminium and indium, two elements of group IIIA of the periodic table, are concentrated by the kidney inside lysosomes of proximal tubule cell. In these lysosomes, aluminium and indium are precipitated as non-soluble phosphate salts and these precipitates are then expelled in the tubular lumen and eliminated with the urinary flow. These data have been visualized by analytical microscopy (ion microscopy and X ray microanalysis). Local acid phosphatases are assumed to permit the concentration of aluminium and indium salts inside the lysosomes.

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE PAGES

Zhong, Ruidan; Schneeloch, John; Li, Qiang; ...

2017-02-16

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Ruidan; Schneeloch, John; Li, Qiang

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration wasmore » 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.« less

Patterning of Indium Tin Oxide Films

NASA Technical Reports Server (NTRS)

Immer, Christopher

2008-01-01

A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.

PubMed

Yoon, Young Joon; Chae, S W; Kim, B K; Park, Min Joo; Kwak, Joon Seop

2010-05-01

Interfacial microstructure and elemental diffusion of Cu-doped indium oxide (CIO)/indium tin oxide (ITO) ohmic contacts to p-type GaN for light-emitting diodes (LEDs) were investigated using cross-sectional transmission electron microscopy (XTEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction. The CIO/ITO contacts gave specific contact resistances of approximately 10(-4) omegacm2 and transmittance greater than 95% at a wavelength of 405 nm when annealed at 630 degrees C for 1 min in air. After annealing at 630 degrees C, multi-component oxides composed of Ga2O3-In2O3, Ga2O3-CuO, and In2O3-CuO formed at the interface between p-GaN and ITO. Formation of multi-component oxides reduced the barrier height between p-GaN and ITO due to their higher work functions than that of ITO, and caused Ga in the GaN to diffuse into the CIO/ITO layer, followed by generation of acceptor-like Ga vacancies near the GaN surface, which lowered contact resistivity of the CIO/ITO contacts to p-GaN after the annealing.

Synthesis, characterization and catalytic activity of indium substituted nanocrystalline Mobil Five (MFI) zeolite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, Kishor Kr.; Nandi, Mithun; Talukdar, Anup K., E-mail: anup_t@sify.com

2015-06-15

Highlights: • In situ modification of the MFI zeolite by incorporation of indium. • The samples were characterized by XRD, FTIR, TGA, UV–vis (DRS), SAA, EDX and SEM. • The incorporation of indium was confirmed by XRD, FT-IR, UV–vis (DRS), EDX and TGA. • Hydroxylation of phenol reaction was studied on the synthesized catalysts. - Abstract: A series of indium doped Mobil Five (MFI) zeolite were synthesized hydrothermally with silicon to aluminium and indium molar ratio of 100 and with aluminium to indium molar ratios of 1:1, 2:1 and 3:1. The MFI zeolite phase was identified by XRD and FT-IRmore » analysis. In XRD analysis the prominent peaks were observed at 2θ values of around 6.5° and 23° with a few additional shoulder peaks in case of all the indium incorporated samples suggesting formation of pure phase of the MFI zeolite. All the samples under the present investigation were found to exhibit high crystallinity (∼92%). The crystallite sizes of the samples were found to vary from about 49 to 55 nm. IR results confirmed the formation of MFI zeolite in all cases showing distinct absorbance bands near 1080, 790, 540, 450 and 990 cm{sup −1}. TG analysis of In-MFI zeolites showed mass losses in three different steps which are attributed to the loss due to adsorbed water molecules and the two types TPA{sup +} cations. Further, the UV–vis (DRS) studies reflected the position of the indium metal in the zeolite framework. Surface area analysis of the synthesized samples was carried out to characterize the synthesized samples The analysis showed that the specific surface area ranged from ∼357 to ∼361 m{sup 2} g{sup −1} and the pore volume of the synthesized samples ranged from 0.177 to 0.182 cm{sup 3} g{sup −1}. The scanning electron microscopy studies showed the structure of the samples to be rectangular and twinned rectangular shaped. The EDX analysis was carried out for confirmation of Si, Al and In in zeolite frame work. The catalytic

A Novel Fabrication Method of Bi₂Te₃-Based Thermoelectric Modules by Indium Electroplating and Thermocompression Bonding.

PubMed

Yoon, Jongchan; Bae, Sung Hwa; Sohn, Ho-Sang; Son, Injoon; Kim, Kyung Tae; Ju, Young-Wan

2018-09-01

In this study, we devised a method to bond thermoelectric elements directly to copper electrodes by plating indium with a relatively low melting point. A coating of indium, ~30 μm in thickness, was fabricated by electroplating the surface of a Bi2Te3-based thermoelectric element with a nickel diffusion barrier layer. They were then subjected to direct thermocompression bonding at 453 K on a hotplate for 10 min at a pressure of 1.1 kPa. Scanning electron microscopy images confirmed that a uniform bond was formed at the copper electrode/thermoelectric element interface, and the melted/solidified indium layer was defect free. Thus, the proposed novel method of fabricating a thermoelectric module by electroplating indium on the surface of the thermoelectric element and directly bonding with the copper electrode can be used to obtain a uniformly bonded interface even at a relatively low temperature without the use of solder pastes.

Determination of indium in geological materials by electrothermal-atomization atomic absorption spectrometry with a tungsten-impregnated graphite furance

USGS Publications Warehouse

Zhou, L.; Chao, T.T.; Meier, A.L.

1984-01-01

The sample is fused with lithium metaborate and the melt is dissolved in 15% (v/v) hydrobromic acid. Iron(III) is reduced with ascorbic acid to avoid its coextraction with indium as the bromide into methyl isobutyl ketone. Impregnation of the graphite furnace with sodium tungstate, and the presence of lithium metaborate and ascorbic acid in the reaction medium improve the sensitivity and precision. The limits of determination are 0.025-16 mg kg-1 indium in the sample. For 22 geological reference samples containing more than 0.1 mg kg-1 indium, relative standard deviations ranged from 3.0 to 8.5% (average 5.7%). Recoveries of indium added to various samples ranged from 96.7 to 105.6% (average 100.2%). ?? 1984.

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

DOEpatents

Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

1998-08-08

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Effect of Precursor Selection on the Photocatalytic Performance of Indium Oxide Nanomaterials for Gas-Phase CO 2 Reduction

DOE PAGES

Hoch, Laura B.; He, Le; Qiao, Qiao; ...

2016-06-01

Nonstoichiometric indium oxide nanoparticles, In 2O 3–x(OH)y, have been shown to function as active photocatalysts for gas-phase CO 2 reduction under simulated solar irradiation. We demonstrate that the choice of starting material has a strong effect on the photocatalytic activity of indium oxide nanoparticles. We also examine three indium oxide materials prepared via the thermal decomposition of either indium(III) hydroxide or indium(III) nitrate and correlate their stability and photocatalytic activity to the number and type of defect present in the material. Furthermore, we use 13CO 2 isotope-tracing experiments to clearly identify the origins of the observed carbon-containing products. Significantly, wemore » find that the oxidizing nature of the precursor anion has a substantial impact on the defect formation within the sample. Our study demonstrates the importance of surface defects in designing an active heterogeneous photocatalyst and provides valuable insight into key parameters for the precursor design, selection, and performance optimization of materials for gas-phase CO 2 reduction.« less

Indium-mediated asymmetric Barbier-type propargylations: additions to aldehydes and ketones and mechanistic investigation of the organoindium reagents.

PubMed

Haddad, Terra D; Hirayama, Lacie C; Buckley, Jannise J; Singaram, Bakthan

2012-01-20

We report a simple, efficient, and general method for the indium-mediated enantioselective propargylation of aromatic and aliphatic aldehydes under Barbier-type conditions in a one-pot synthesis affording the corresponding chiral alcohol products in very good yield (up to 90%) and enantiomeric excess (up to 95%). The extension of this methodology to ketones demonstrated the need for electrophilic ketones more reactive than acetophenone as the reaction would not proceed with just acetophenone. Using the Lewis acid indium triflate [In(OTf)(3)] induced regioselective formation of the corresponding homoallenic alcohol product from acetophenone. However, this methodology demonstrated excellent chemoselectivity in formation of only the corresponding secondary homopropargylic alcohol product in the presence of a ketone functionality. Investigation of the organoindium intermediates under our reaction conditions shows the formation of allenylindium species, and we suggest that these species contain an indium(III) center. In addition, we have observed the presence of a shiny, indium(0) nugget throughout the reaction, irrespective of the stoichiometry, indicating disproportionation of indium halide byproduct formed during the reaction.

Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

NASA Astrophysics Data System (ADS)

Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

2016-11-01

Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Stable indium oxide thin-film transistors with fast threshold voltage recovery

NASA Astrophysics Data System (ADS)

Vygranenko, Yuriy; Wang, Kai; Nathan, Arokia

2007-12-01

Stable thin-film transistors (TFTs) with semiconducting indium oxide channel and silicon dioxide gate dielectric were fabricated by reactive ion beam assisted evaporation and plasma-enhanced chemical vapor deposition. The field-effect mobility is 3.3cm2/Vs, along with an on/off current ratio of 106, and subthreshold slope of 0.5V/decade. When subject to long-term gate bias stress, the TFTs show fast recovery of the threshold voltage (VT) when relaxed without annealing, suggesting that charge trapping at the interface and/or in the bulk gate dielectric to be the dominant mechanism underlying VT instability. Device performance and stability make indium oxide TFTs promising for display applications.

A Comparison of Gallium and Indium Alkoxide Complexes as Catalysts for Ring-Opening Polymerization of Lactide.

PubMed

Kremer, Alexandre B; Andrews, Ryan J; Milner, Matthew J; Zhang, Xu R; Ebrahimi, Tannaz; Patrick, Brian O; Diaconescu, Paula L; Mehrkhodavandi, Parisa

2017-02-06

The impact of the metal size and Lewis acidity on the polymerization activity of group 13 metal complexes was studied, and it was shown that, within the same ligand family, indium complexes are far more reactive and selective than their gallium analogues. To this end, gallium and aluminum complexes supported by a tridentate diaminophenolate ligand, as well as gallium complexes supported by N,N'-ethylenebis(salicylimine)(salen) ligands, were synthesized and compared to their indium analogues. Using the tridentate ligand set, it was possible to isolate the gallium chloride complexes 3 and (±)-4 and the aluminum analogues 5 and (±)-6. The alkoxygallium complex (±)-2, supported by a salen ligand, was also prepared and characterized and, along with the three-component system GaCl 3 /BnOH/NEt 3 , was tested for the ring-opening polymerization of lactide and ε-caprolactone. The polymerization rates and selectivities of both systems were significantly lower than those for the indium analogues. The reaction of (±)-2 with 1 equiv of lactide forms the first insertion product, which is stable in solution and can be characterized at room temperature. In order to understand the differences of the reactivity within the group 13 metal complexes, a Lewis acidity study using triethylphosphine oxide (the Gutmann-Beckett method) was undertaken for a series of aluminum, gallium, and indium halide complexes; this study shows that indium halide complexes are less Lewis acidic than their aluminum and gallium analogues. Density functional theory calculations show that the Mulliken charges for the indium complexes are higher than those for the gallium analogues. These data suggest that the impact of ligands on the reactivity is more significant than that of the metal Lewis acidity.

Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

NASA Technical Reports Server (NTRS)

Blackburn, L. B.; Starke, E. A., Jr.

1989-01-01

Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

First-principles analysis of structural and opto-electronic properties of indium tin oxide

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-05-01

Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

Tin-polyimide and indium-polyimide thin-film composites as soft X-ray bandpass filters

NASA Technical Reports Server (NTRS)

Powell, Stephen F.; Allen, Maxwell J.; Willis, Thomas D.

1993-01-01

A tin-polyimide and an indium-polyimide soft X-ray bandpass filter were fabricated with thicknesses of 1400 and 1750 A for the metal and polyimide components, respectively. The transmission of each filter was measured at the Stanford Synchrotron Radiation Laboratory. The transmission of the tin-polyimide filter was found to be about 40 percent for radiation with wavelengths between 60 and 80 A. The transmission of the indium-polyimide filter was greater than 40 percent between 70 and 90 A. The indium was about 5 percent more transmissive than the tin and attained a maximum transmission of about 48 percent at 76 A. Such filters have potential applications to soft X-ray telescopes that operate in this region. They might also be of interest to investigators who work with X-ray microscopes that image live biological specimens in the 23-44-A water window.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

NASA Astrophysics Data System (ADS)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Application of Mythen detector: In-situ XRD study on the thermal expansion behavior of metal indium

NASA Astrophysics Data System (ADS)

Du, Rong; Chen, ZhongJun; Cai, Quan; Fu, JianLong; Gong, Yu; Wu, ZhongHua

2016-07-01

A Mythen detector has been equipped at the beamline 4B9A of Beijing Synchrotron Radiation Facility (BSRF), which is expected to enable BSRF to perform time-resolved measurement of X-ray diffraction (XRD) full-profiles. In this paper, the thermal expansion behavior of metal indium has been studied by using the in-situ XRD technique with the Mythen detector. The indium was heated from 303 to 433 K with a heating rate of 2 K/min. The in-situ XRD full-profiles were collected with a rate of one profile per 10 seconds. Rietveld refinement was used to extract the structural parameters. The results demonstrate that these collected quasi-real-time XRD profiles can be well used for structural analysis. The metal indium was found to have a nonlinear thermal expansion behavior from room temperature to the melting point (429.65 K). The a-axis of the tetragonal unit cell expands with a biquadratic dependency on temperature, while the c-axis contracts with a cubic dependency on temperature. By the time-resolved XRD measurements, it was observed that the [200] preferred orientation can maintain to about 403.15 K. While (110) is the last and detectable crystal plane just before melting of the polycrystalline indium foil. This study is not only beneficial to the application of metal indium, but also exhibits the capacity of in-situ time-resolved XRD measurements at the X-ray diffraction station of BSRF.

Influence of disorder on the superconducting critical temperature in indium-opal nanocomposites

NASA Astrophysics Data System (ADS)

Zakharchuk, I.; Januzaj, A.; Mikhailin, N. Yu.; Traito, K. B.; Chernyaev, A. V.; Romanov, S. G.; Safonchik, M.; Shamshur, D. V.; Lähderanta, E.

2018-06-01

Transport properties of bulk indium-opal and indium-porous glass superconducting nanocomposites possessing moderate and strong disorder are investigated. A strongly nonmonotonous dependence of the global critical temperature Tc versus normal state conductivity of samples is found. The maximum, which is observed at moderate disorder, has Tc higher than that of clean bulk indium. The increasing part can be explained by the Eliashberg equations with disorder and an additional mechanism of interaction between superconducting and dielectric granules. The descending part of the maximum at higher disorder can be explained by the increasing of long-range Coulomb repulsion due to diffusion of charges. Negative slope in magnetic field dependence of resistivity and a peak in the temperature dependence of resistivity, observed in the sample near the proximity to the disorder-induced superconductor-insulator transition (SIT). A large difference between the onset temperature of superconducting fluctuations, Tcon , and global critical temperature Tc is found and considered in the framework of the weak multifractal theory. Slow time-logarithmic relaxation of the resistivity between Tc and Tcon is observed, which assumes existence of the precursor state near the SIT. This unusual state is discussed in the scope of the many-body localization theory.

Evaluation of photopoint photosensitizer mv6401, indium chloride methyl pyropheophorbide, as a photodynamic therapy agent in primate choriocapillaris and laser-induced choroidal neovascularization.

PubMed

Ciulla, Thomas A; Criswell, Mark H; Danis, Ronald P; Snyder, Wendy J; Small, Ward

2004-08-01

To assess the potential of a new photosensitizer, indium chloride methyl pyropheophorbide (PhotoPoint MV6401), for ocular photodynamic therapy (PDT) in normal choriocapillaris vessels and experimentally induced choroidal neovascularization in New-World monkeys (Saimiri sciureus). PhotoPoint MV6401 (Miravant Pharmaceuticals, Inc., Santa Barbara, CA) was activated at 664 nm using a DD3-0665 (Miravant Systems, Inc., Santa Barbara, CA) 0.5 W diode laser. The efficacy of MV6401 was evaluated by indirect ophthalmoscopy, fundus photography, fluorescein angiography, and histology. The drug and light doses were 0.10 micromoles/kg to 0.3 micromoles/kg and 10 J/cm to 40 J/cm, respectively, and post-injection activation times ranged from +10 minutes to +120 minutes. Best closure of normal choriocapillaris was achieved at a dosage level of 0.15 micromoles/kg in primates. Histology demonstrated that increased post-injection activation times (+60 minutes to +90 minutes) and low laser light doses (10 J/cm to 20 J/cm) in the primate model resulted in selective closure of the choriocapillaris and medium sized choroidal vessels with minimal effect to the retina. Histology from neovascular lesions PDT-treated with MV6401 revealed significant diminution of vascularity, correlating with diminution of leakage observed on angiography. PhotoPoint MV6401, indium chloride methyl pyropheophorbide, is a potent photosensitizer that demonstrates both efficacy and selectivity in primate choriocapillaris and laser-induced choroidal neovascularization occlusion. Maximum selectivity was achieved using a post infusion interval of +60 to +90 minutes.

Novel solar light driven photocatalyst, zinc indium vanadate for photodegradation of aqueous phenol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahapure, Sonali A.; Rane, Vilas H.; Ambekar, Jalindar D.

2011-05-15

Graphical abstract: Novel photocatalyst, zinc indium vanadate (ZnIn{sub 2}V{sub 2}O{sub 9}) demonstrated and showed an excellent photocatalytic activity for phenol degradation under visible light. Research highlights: {yields} Designing and identification of a photocatalyst having prospective potential application to be used in visible light (400-800 nm). {yields} Successful synthesis of novel ZnIn{sub 2}V{sub 2}O{sub 9} by solid state route. {yields} Confirmation of the designed product using characterization techniques. {yields} Application study comprising photodegradation of aqueous phenol at visible light despite of UV radiations. -- Abstract: In the present investigation, we have demonstrated the synthesis of novel photocatalyst, zinc indium vanadate (ZIV)more » by solid-solid state route using respective oxides of zinc, indium and vanadium. This novel photocatalyst was characterized using XRD, FESEM, UV-DRS and FTIR in order to investigate its structural, morphological and optical properties. XRD clearly shows the formation of phase pure ZIV of triclinic crystal structure with good crystallinity. FESEM micrographs showed the clustered morphology having particle size between 0.5 and 1 {mu}m. Since, optical study showed the band gap around 2.8 eV, i.e. in visible region, we have performed the photocatalytic activity of phenol degradation under visible light irradiation. The photodecomposition of phenol by ZIV is studied for the first time and an excellent photocatalytic activity was obtained using this novel photocatalyst. Considering the band gap of zinc indium vanadate in visible region, it will also be the potential candidate for water splitting.« less

Indium hydroxide to oxide decomposition observed in one nanocrystal during in situ transmission electron microscopy studies

NASA Astrophysics Data System (ADS)

Miehe, Gerhard; Lauterbach, Stefan; Kleebe, Hans-Joachim; Gurlo, Aleksander

2013-02-01

The high-resolution transmission electron microscopy (HR-TEM) is used to study, in situ, spatially resolved decomposition in individual nanocrystals of metal hydroxides and oxyhydroxides. This case study reports on the decomposition of indium hydroxide (c-In(OH)3) to bixbyite-type indium oxide (c-In2O3). The electron beam is focused onto a single cube-shaped In(OH)3 crystal of {100} morphology with ca. 35 nm edge length and a sequence of HR-TEM images was recorded during electron beam irradiation. The frame-by-frame analysis of video sequences allows for the in situ, time-resolved observation of the shape and orientation of the transformed crystals, which in turn enables the evaluation of the kinetics of c-In2O3 crystallization. Supplementary material (video of the transformation) related to this article can be found online at 10.1016/j.jssc.2012.09.022. After irradiation the shape of the parent cube-shaped crystal is preserved, however, its linear dimension (edge) is reduced by the factor 1.20. The corresponding spotted selected area electron diffraction (SAED) pattern representing zone [001] of c-In(OH)3 is transformed to a diffuse strongly textured ring-like pattern of c-In2O3 that indicates the transformed cube is no longer a single crystal but is disintegrated into individual c-In2O3 domains with the size of about 5-10 nm. The induction time of approximately 15 s is estimated from the time-resolved Fourier transforms. The volume fraction of the transformed phase (c-In2O3), calculated from the shrinkage of the parent c-In(OH)3 crystal in the recorded HR-TEM images, is used as a measure of the kinetics of c-In2O3 crystallization within the framework of Avrami-Erofeev formalism. The Avrami exponent of ˜3 is characteristic for a reaction mechanism with fast nucleation at the beginning of the reaction and subsequent three-dimensional growth of nuclei with a constant growth rate. The structural transformation path in reconstructive decomposition of c-In(OH)3 to c

Work in progress: radionuclide imaging of indium-111-labeled eosinophils in mice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Runge, V.M.; Rand, T.H.; Clanton, J.A.

1983-05-01

Eosinophils isolated from peritoneal exudates were labeled with indium-111-oxine and injected intravenously into sensitized mice. They became localized at sites of inflammation produced by intradermal injections of schistosomal antigen or Toxocara canis larvae, whereas labeled neutrophils did not. Intense uptake of eosinophils by normal spleen, liver, and bone marrow was noted, with tracer distribution effectively complete by 5 hours after injection. Indium-111-eosinophil studies appear to be quite sensitive to parasitic inflammatory reactions; in contrast, nonspecific inflammation such as that induced by turpentine causes localization of eosinophils, but to a lesser extent. This technique may be useful in the study ofmore » parasitic and allergic disease.« less

Apker Award Talk: Atomic Beam Measurement of the Indium 6p1 / 2 Scalar Polarizability

NASA Astrophysics Data System (ADS)

Augenbraun, Benjamin

2016-05-01

We report on the first measurement of the scalar polarizability of the indium 6p1 / 2 -excited state using two-step laser spectroscopy in an atomic beam. This is one in a series of precise atomic structure measurements by the Majumder lab at Williams College, which serve as stringent tests of abinitio calculation methods for three-valence-electron systems. We stabilize a laser to the indium 5p1 / 2 --> 6s1 / 2 410 nm transition and scan a second laser across the 6s1 / 2 --> 6p1 / 2 1343 nm transition. The two laser beams are overlapped and interact transversely with a collimated atomic beam of indium. Two-tone FM spectroscopy allows us to observe the small (< 1 part in 103) IR absorption, and characteristic sideband features in the RF-demodulated lineshape provide built-in frequency calibration. Application of DC electric fields up to 20 kV/cm give rise to Stark shifts of order 100 MHz. Because our group has previously measured the difference in polarizabilities within the 410 nm transition, we can determine the 6p1 / 2 polarizability with no loss of precision. Preliminary results are in excellent agreement with recent theoretical calculations and can be used to infer accurate values for the indium 6 p - 5 d matrix elements.

Recovery of indium ions by nanoscale zero-valent iron

NASA Astrophysics Data System (ADS)

Chen, Wen; Su, Yiming; Wen, Zhipan; Zhang, Yalei; Zhou, Xuefei; Dai, Chaomeng

2017-03-01

Indium and its compounds have plenty of industrial applications and high demand. Therefore, indium recovery from various industrial effluents is necessary. It was sequestered by nanoscale zero-valent iron (nZVI) whose size mainly ranged from 50 to 70 nm. Adsorption kinetics and isotherm, influence of pH, and ionic strength were thoroughly investigated. The reaction process was well fitted to a pseudo second-order model, and the maximum adsorption capacity of In(III) was 390 mg In(III)/g nZVI similar to 385 mg In(III)/g nZVI at 298 K calculated by Langmuir model. The mole ratio of Fe(II) released to In(III) immobilized was 3:2, which implied a special chemical process of co-precipitation combined Fe(OH)2 with In(OH)3. Transmission electron microscopy with an energy-disperse X-ray (TEM-EDX), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were used to characterize surface morphology, corrosion products, and valence state of indium precipitate formed on nanoparticles. The structural evolution changed from core-shell structure of iron oxide to sheet structure of co-precipitation, to sphere structure that hydroxide gradually dissolved as the pH decreased, and to cavity structures for the pH continually decreased. Furthermore, below pH 4.7, the In(III) enrichment was inhibited for the limited capacity of co-precipitation. Also, it was found that Ca2+ and HPO4 2- have more negative influence on In(III) recovery compared with Na+, NO3 -, HCO3 -, and SO4 2-. Therefore, the In(III) recovery can be described by a mechanism which consists of adsorption, co-precipitation, and reduction and was over 78% even after 3 cycles. The results confirmed that it was applicable to employ nZVI for In(III) immobilization.

22 CFR 120.35 - [Reserved

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false [Reserved] 120.35 Section 120.35 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.35 [Reserved] ...

22 CFR 120.35 - [Reserved

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false [Reserved] 120.35 Section 120.35 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.35 [Reserved] ...

22 CFR 120.33 - [Reserved

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false [Reserved] 120.33 Section 120.33 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.33 [Reserved] ...

22 CFR 120.33 - [Reserved

Code of Federal Regulations, 2012 CFR

2012-04-01

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22 CFR 120.38 - [Reserved

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false [Reserved] 120.38 Section 120.38 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.38 [Reserved] ...

22 CFR 120.38 - [Reserved

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false [Reserved] 120.38 Section 120.38 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.38 [Reserved] ...

Synthesis and Structural Characterization of Tris(dimethyldithiocarbamate)Indium(III), In[S2CN(CH3)2]3

NASA Technical Reports Server (NTRS)

Clark, Eric B.; Breen, Marc L.; Fanwick, Phillip E.; Hepp, Aloysius F.; Duraj, Stan A.

1998-01-01

The synthesis and structure of the indium dithiocarbamate, In[SCN(CH3)2]3*1/2 4-mepy (4-mepy = 4-methylpyridine), is described. Indium metal was oxidized by tetramethylthiuramdisulfide in 4-methylpyridine at 25C to form a new, homoleptic indium(HI) dithiocarbamate in yields exceeding 60%. In[S2CN(CH3)213 exists as a discrete molecule with a distorted-octahedral geometry. The compound crystallizes in the P 1-bar (No. 2) space group with a = 9.282(l)A, b = 10.081(1)A, c = 12.502 A, alpha= 73.91 (1) degrees, beta = 70.21(1) degrees, gamma = 85.84(1) degrees, Z = 2,v(A(exp 3)) =1057.3(3), R = 0.046, and R(sub w) = 0.061.

Recent developments in indium phosphide space solar cell research

NASA Technical Reports Server (NTRS)

Brinker, David J.; Weinberg, Irving

1987-01-01

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

Diode laser-based thermometry using two-line atomic fluorescence of indium and gallium

NASA Astrophysics Data System (ADS)

Borggren, Jesper; Weng, Wubin; Hosseinnia, Ali; Bengtsson, Per-Erik; Aldén, Marcus; Li, Zhongshan

2017-12-01

A robust and relatively compact calibration-free thermometric technique using diode lasers two-line atomic fluorescence (TLAF) for reactive flows at atmospheric pressures is investigated. TLAF temperature measurements were conducted using indium and, for the first time, gallium atoms as temperature markers. The temperature was measured in a multi-jet burner running methane/air flames providing variable temperatures ranging from 1600 to 2000 K. Indium and gallium were found to provide a similar accuracy of 2.7% and precision of 1% over the measured temperature range. The reliability of the TLAF thermometry was further tested by performing simultaneous rotational CARS measurements in the same experiments.

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Lee, Hwan-Jae; Oh, Saeroonter; Park, Jin-Seong

2016-12-14

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H 2 O 2 ) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In 2 O 3 ) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In 2 O 3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In 2 O 3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm 2 V -1 s -1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian; Schulze, Dirk

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetimemore » in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.« less

7 CFR 457.120 - [Reserved

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 6 2010-01-01 2010-01-01 false [Reserved] 457.120 Section 457.120 Agriculture Regulations of the Department of Agriculture (Continued) FEDERAL CROP INSURANCE CORPORATION, DEPARTMENT OF AGRICULTURE COMMON CROP INSURANCE REGULATIONS § 457.120 [Reserved] ...

How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

NASA Astrophysics Data System (ADS)

Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

2010-05-01

Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

7 CFR 1280.120 - Research.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 10 2013-01-01 2013-01-01 false Research. 1280.120 Section 1280.120 Agriculture... AND ORDERS; MISCELLANEOUS COMMODITIES), DEPARTMENT OF AGRICULTURE LAMB PROMOTION, RESEARCH, AND INFORMATION ORDER Lamb Promotion, Research, and Information Order Definitions § 1280.120 Research. Research...

7 CFR 1280.120 - Research.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 10 2012-01-01 2012-01-01 false Research. 1280.120 Section 1280.120 Agriculture... AND ORDERS; MISCELLANEOUS COMMODITIES), DEPARTMENT OF AGRICULTURE LAMB PROMOTION, RESEARCH, AND INFORMATION ORDER Lamb Promotion, Research, and Information Order Definitions § 1280.120 Research. Research...

7 CFR 1280.120 - Research.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 10 2014-01-01 2014-01-01 false Research. 1280.120 Section 1280.120 Agriculture... AND ORDERS; MISCELLANEOUS COMMODITIES), DEPARTMENT OF AGRICULTURE LAMB PROMOTION, RESEARCH, AND INFORMATION ORDER Lamb Promotion, Research, and Information Order Definitions § 1280.120 Research. Research...

7 CFR 1280.120 - Research.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 10 2011-01-01 2011-01-01 false Research. 1280.120 Section 1280.120 Agriculture... AND ORDERS; MISCELLANEOUS COMMODITIES), DEPARTMENT OF AGRICULTURE LAMB PROMOTION, RESEARCH, AND INFORMATION ORDER Lamb Promotion, Research, and Information Order Definitions § 1280.120 Research. Research...

7 CFR 1280.120 - Research.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 10 2010-01-01 2010-01-01 false Research. 1280.120 Section 1280.120 Agriculture... AND ORDERS; MISCELLANEOUS COMMODITIES), DEPARTMENT OF AGRICULTURE LAMB PROMOTION, RESEARCH, AND INFORMATION ORDER Lamb Promotion, Research, and Information Order Definitions § 1280.120 Research. Research...

7 CFR 1703.120 - [Reserved

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 11 2010-01-01 2010-01-01 false [Reserved] 1703.120 Section 1703.120 Agriculture Regulations of the Department of Agriculture (Continued) RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE RURAL DEVELOPMENT Distance Learning and Telemedicine Grant Program § 1703.120 [Reserved] ...

7 CFR 1703.120 - [Reserved

Code of Federal Regulations, 2011 CFR

2011-01-01

... 7 Agriculture 11 2011-01-01 2011-01-01 false [Reserved] 1703.120 Section 1703.120 Agriculture Regulations of the Department of Agriculture (Continued) RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE RURAL DEVELOPMENT Distance Learning and Telemedicine Grant Program § 1703.120 [Reserved] ...

7 CFR 1703.120 - [Reserved

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 11 2014-01-01 2014-01-01 false [Reserved] 1703.120 Section 1703.120 Agriculture Regulations of the Department of Agriculture (Continued) RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE RURAL DEVELOPMENT Distance Learning and Telemedicine Grant Program § 1703.120 [Reserved] ...

7 CFR 1703.120 - [Reserved

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 11 2013-01-01 2013-01-01 false [Reserved] 1703.120 Section 1703.120 Agriculture Regulations of the Department of Agriculture (Continued) RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE RURAL DEVELOPMENT Distance Learning and Telemedicine Grant Program § 1703.120 [Reserved] ...

7 CFR 1703.120 - [Reserved

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 11 2012-01-01 2012-01-01 false [Reserved] 1703.120 Section 1703.120 Agriculture Regulations of the Department of Agriculture (Continued) RURAL UTILITIES SERVICE, DEPARTMENT OF AGRICULTURE RURAL DEVELOPMENT Distance Learning and Telemedicine Grant Program § 1703.120 [Reserved] ...

Synthesis and Structural Characterization of Tris(dimethyldithicarbamate)Indium(III), In[S2CN(CH3)2]3

NASA Technical Reports Server (NTRS)

Clark, Eric B.; Breen, Marc L.; Fanwick, Phillip E.; Hepp, Aloysius F.; Duraj, Stan A.

1998-01-01

The synthesis and structure of the indium dithiocarbamate, In[S2CN(CH3)2]30 central dot 1/2 4- mepy (4-mepy = 4-methylpyridine), is described. Indium metal was oxidized by tetramethylthiuramdisulfide in 4-methylpyridine at 25 C to form a new, homoleptic indium(III) dithiocarbamate in yields exceeding 60%. In[S2CN(CH3)2]3 exists as a discrete molecule with a distorted-octahedral geometry. The compound crystallizes in the P 1-bar (No. 2) space group with a = 9.282(l) A, b = 10.081 (1) A, c, c = 12.502 A, alpha = 73.91 (1)(sup 0), beta = 70.21(1)(sup 0), gamma = 85.84(1)(sup 0), Z = 2, V (A(sup 3) = 1057.3(3), R = 0.046, and R(sub w) = 0.061.

40 CFR 82.120 - Petitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 17 2011-07-01 2011-07-01 false Petitions. 82.120 Section 82.120 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) PROTECTION OF STRATOSPHERIC OZONE The Labeling of Products Using Ozone-Depleting Substances § 82.120 Petitions. (a...

40 CFR 82.120 - Petitions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 17 2010-07-01 2010-07-01 false Petitions. 82.120 Section 82.120 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) PROTECTION OF STRATOSPHERIC OZONE The Labeling of Products Using Ozone-Depleting Substances § 82.120 Petitions. (a...

33 CFR 155.120 - Equivalents.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Equivalents. 155.120 Section 155.120 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) POLLUTION OIL OR HAZARDOUS MATERIAL POLLUTION PREVENTION REGULATIONS FOR VESSELS General § 155.120 Equivalents...

33 CFR 155.120 - Equivalents.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Equivalents. 155.120 Section 155.120 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) POLLUTION OIL OR HAZARDOUS MATERIAL POLLUTION PREVENTION REGULATIONS FOR VESSELS General § 155.120 Equivalents...

33 CFR 155.120 - Equivalents.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Equivalents. 155.120 Section 155.120 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) POLLUTION OIL OR HAZARDOUS MATERIAL POLLUTION PREVENTION REGULATIONS FOR VESSELS General § 155.120 Equivalents...

40 CFR 720.120 - Compliance.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Compliance. 720.120 Section 720.120 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT PREMANUFACTURE NOTIFICATION Compliance and Inspections § 720.120 Compliance. (a) Failure to comply with any...

40 CFR 720.120 - Compliance.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Compliance. 720.120 Section 720.120 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT PREMANUFACTURE NOTIFICATION Compliance and Inspections § 720.120 Compliance. (a) Failure to comply with any...

Effect of variation in indium concentration on the photosensitivity of chlorine doped In{sub 2}S{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherian, Angel Susan; Kartha, C. Sudha; Vijayakumar, K. P.

2014-01-28

Consequence of variation in Indium concentration in chlorine doped In2S{sub 3} thin films deposited by spray pyrolysis technique was studied. Chlorine was incorporated in the spray solution, using HCl and Indium concentration was varied by adjusting In/S ratio Interestingly, the photo response of all chlorine doped samples augmented compared to pristine samples; but the highest photosensitivity value of ∼2300 was obtained only when 36ml 0.5M HCl was added to the solution of In{sub 2}S{sub 3} having In/S=2/8. It was also observed that samples with high photosensitivity possess higher band gap and variation in sub band gap absoption levels were observedmore » with increase in Indium concentration. The present study proved that concentration of Indium plays an important role in controlling the crystallinity and photosensitivity of chlorine doped samples.« less

13 CFR 120.411 - Preferences.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Preferences. 120.411 Section 120.411 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Participation Criteria § 120.411 Preferences. An agreement to participate under the Act may not establish any Preferences...

13 CFR 120.411 - Preferences.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Preferences. 120.411 Section 120.411 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Participation Criteria § 120.411 Preferences. An agreement to participate under the Act may not establish any Preferences...

10 CFR 830.120 - Scope.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 10 Energy 4 2010-01-01 2010-01-01 false Scope. 830.120 Section 830.120 Energy DEPARTMENT OF ENERGY NUCLEAR SAFETY MANAGEMENT Quality Assurance Requirements § 830.120 Scope. This subpart establishes quality assurance requirements for contractors conducting activities, including providing items or services, that...

7 CFR 959.120 - Policy.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 8 2014-01-01 2014-01-01 false Policy. 959.120 Section 959.120 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (MARKETING AGREEMENTS... Regulations Safeguards § 959.120 Policy. Whenever shipments of onions for special purposes pursuant to § 959...

7 CFR 65.120 - Chicken.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 3 2010-01-01 2010-01-01 false Chicken. 65.120 Section 65.120 Agriculture Regulations..., PORK, LAMB, CHICKEN, GOAT MEAT, PERISHABLE AGRICULTURAL COMMODITIES, MACADAMIA NUTS, PECANS, PEANUTS, AND GINSENG General Provisions Definitions § 65.120 Chicken. Chicken has the meaning given the term in...

10 CFR 830.120 - Scope.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 10 Energy 4 2011-01-01 2011-01-01 false Scope. 830.120 Section 830.120 Energy DEPARTMENT OF ENERGY NUCLEAR SAFETY MANAGEMENT Quality Assurance Requirements § 830.120 Scope. This subpart establishes quality assurance requirements for contractors conducting activities, including providing items or services, that...

10 CFR 830.120 - Scope.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 10 Energy 4 2014-01-01 2014-01-01 false Scope. 830.120 Section 830.120 Energy DEPARTMENT OF ENERGY NUCLEAR SAFETY MANAGEMENT Quality Assurance Requirements § 830.120 Scope. This subpart establishes quality assurance requirements for contractors conducting activities, including providing items or services, that...

10 CFR 830.120 - Scope.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 10 Energy 4 2012-01-01 2012-01-01 false Scope. 830.120 Section 830.120 Energy DEPARTMENT OF ENERGY NUCLEAR SAFETY MANAGEMENT Quality Assurance Requirements § 830.120 Scope. This subpart establishes quality assurance requirements for contractors conducting activities, including providing items or services, that...

Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

NASA Astrophysics Data System (ADS)

Jewett, Scott A.; Yoder, Jeffrey A.; Ivanisevic, Albena

2012-11-01

Devices containing III-V semiconductors such as InAs are increasingly being used in the electronic industry for a variety of optoelectronic applications. Furthermore, the attractive chemical, material, electronic properties make such materials appealing for use in devices designed for biological applications, such as biosensors. However, in biological applications the leaching of toxic materials from these devices could cause harm to cells or tissue. Additionally, after disposal, toxic inorganic materials can leach from devices and buildup in the environment, causing long-term ecological harm. Therefore, the toxicity of these materials along with their stability in physiological conditions are important factors to consider. Surface modifications are one common method of stabilizing semiconductor materials in order to chemically and electronically passivate them. Such surface modifications could also prevent the leaching of toxic materials by preventing the regrowth of the unstable surface oxide layer and by creating an effective barrier between the semiconductor surface and the surrounding environment. In this study, various surface modifications on InAs are developed with the goal of decreasing the leaching of indium and arsenic. The leaching of indium and arsenic from modified substrates was assessed in physiological conditions using inductively coupled plasma mass spectrometry (ICP-MS). Substrates modified with 11-mercapto-1-undecanol (MU) and graft polymerized with poly(ethylene) glycol (PEG) were most effective at preventing indium and arsenic leaching. These surfaces were characterized using contact angle analysis, ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Substrates modified with collagen and synthetic polyelectrolytes were least effective, due to the destructive nature of acidic environments on InAs. The toxicity of modified and unmodified InAs, along with raw indium, arsenic, and PEG components was assessed

Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

PubMed

Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

2013-03-25

InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

13 CFR 120.351 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Definitions. 120.351 Section 120.351 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.351 Definitions. All terms specific to ESOPs have the same definition...

38 CFR 59.120 - Hearings.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 2 2011-07-01 2011-07-01 false Hearings. 59.120 Section 59.120 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED) GRANTS TO STATES FOR CONSTRUCTION OR ACQUISITION OF STATE HOMES § 59.120 Hearings. If the Secretary determines that...

22 CFR 120.14 - Person.

Code of Federal Regulations, 2010 CFR

2010-04-01

... any other entity, organization or group, including governmental entities. If a provision in this... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Person. 120.14 Section 120.14 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.14 Person. Person...

13 CFR 120.346 - Eligibility.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Eligibility. 120.346 Section 120.346 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans International Trade Loans § 120.346 Eligibility. (a) An applicant must establish that: (1) The loan proceeds...

13 CFR 120.346 - Eligibility.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Eligibility. 120.346 Section 120.346 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans International Trade Loans § 120.346 Eligibility. (a) An applicant must establish that: (1) The loan proceeds...

38 CFR 59.120 - Hearings.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 38 Pensions, Bonuses, and Veterans' Relief 2 2010-07-01 2010-07-01 false Hearings. 59.120 Section 59.120 Pensions, Bonuses, and Veterans' Relief DEPARTMENT OF VETERANS AFFAIRS (CONTINUED) GRANTS TO STATES FOR CONSTRUCTION OR ACQUISITION OF STATE HOMES § 59.120 Hearings. If the Secretary determines that...

21 CFR 120.1 - Applicability.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Applicability. 120.1 Section 120.1 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.1...

21 CFR 120.1 - Applicability.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Applicability. 120.1 Section 120.1 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.1...

21 CFR 120.1 - Applicability.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Applicability. 120.1 Section 120.1 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.1...

21 CFR 120.1 - Applicability.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Applicability. 120.1 Section 120.1 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.1...

21 CFR 120.1 - Applicability.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Applicability. 120.1 Section 120.1 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.1...

13 CFR 120.343 - Collateral.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Collateral. 120.343 Section 120.343 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Export Working Capital Program (ewcp) § 120.343 Collateral. A Borrower must give SBA a first security...

13 CFR 120.351 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Definitions. 120.351 Section 120.351 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.351 Definitions. All terms specific to ESOPs have the same definition...

13 CFR 120.351 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Definitions. 120.351 Section 120.351 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.351 Definitions. All terms specific to ESOPs have the same definition...

13 CFR 120.346 - Eligibility.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Eligibility. 120.346 Section 120.346 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans International Trade Loans § 120.346 Eligibility. (a) An applicant must establish that: (1) The loan proceeds...

13 CFR 120.351 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Definitions. 120.351 Section 120.351 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.351 Definitions. All terms specific to ESOPs have the same definition...

13 CFR 120.351 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Definitions. 120.351 Section 120.351 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.351 Definitions. All terms specific to ESOPs have the same definition...

15 CFR 930.120 - Objectives.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 15 Commerce and Foreign Trade 3 2010-01-01 2010-01-01 false Objectives. 930.120 Section 930.120... AND ATMOSPHERIC ADMINISTRATION, DEPARTMENT OF COMMERCE OCEAN AND COASTAL RESOURCE MANAGEMENT FEDERAL... Objectives of the Act and National Security Interests § 930.120 Objectives. This subpart sets forth the...

Stopping characteristics of boron and indium ions in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A.

2016-12-15

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. Themore » Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.« less

13 CFR 120.925 - Preferences.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Preferences. 120.925 Section 120.925 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company... Preference. (See § 120.10 for a definition of Preference.) [61 FR 3235, Jan. 31, 1996, as amended at 68 FR...

13 CFR 120.349 - Collateral.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Collateral. 120.349 Section 120.349 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans International Trade Loans § 120.349 Collateral. Each IT loan must be secured either by a first lien position or...

14 CFR 1264.120 - Discovery.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 5 2012-01-01 2012-01-01 false Discovery. 1264.120 Section 1264.120... PENALTIES ACT OF 1986 § 1264.120 Discovery. (a) The following types of discovery are authorized: (1..., discovery is available only as ordered by the presiding officer. The presiding officer shall regulate the...

14 CFR 1264.120 - Discovery.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 5 2013-01-01 2013-01-01 false Discovery. 1264.120 Section 1264.120... PENALTIES ACT OF 1986 § 1264.120 Discovery. (a) The following types of discovery are authorized: (1..., discovery is available only as ordered by the presiding officer. The presiding officer shall regulate the...

14 CFR 1264.120 - Discovery.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 5 2011-01-01 2010-01-01 true Discovery. 1264.120 Section 1264.120... PENALTIES ACT OF 1986 § 1264.120 Discovery. (a) The following types of discovery are authorized: (1..., discovery is available only as ordered by the presiding officer. The presiding officer shall regulate the...

21 CFR 120.20 - General.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false General. 120.20 Section 120.20 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.20 General...

21 CFR 120.20 - General.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false General. 120.20 Section 120.20 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.20 General...

21 CFR 120.12 - Records.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Records. 120.12 Section 120.12 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.12 Records. (a...

21 CFR 120.3 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Definitions. 120.3 Section 120.3 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.3 Definitions...

21 CFR 120.3 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Definitions. 120.3 Section 120.3 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.3 Definitions...

21 CFR 120.13 - Training.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Training. 120.13 Section 120.13 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.13 Training...

21 CFR 120.20 - General.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false General. 120.20 Section 120.20 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.20 General...

21 CFR 120.3 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Definitions. 120.3 Section 120.3 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.3 Definitions...

21 CFR 120.13 - Training.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Training. 120.13 Section 120.13 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.13 Training...

21 CFR 120.12 - Records.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Records. 120.12 Section 120.12 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.12 Records. (a...

21 CFR 120.3 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Definitions. 120.3 Section 120.3 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.3 Definitions...

21 CFR 120.13 - Training.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Training. 120.13 Section 120.13 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.13 Training...

21 CFR 120.13 - Training.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Training. 120.13 Section 120.13 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.13 Training...

21 CFR 120.13 - Training.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Training. 120.13 Section 120.13 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.13 Training...

21 CFR 120.12 - Records.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Records. 120.12 Section 120.12 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.12 Records. (a...

21 CFR 120.3 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Definitions. 120.3 Section 120.3 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.3 Definitions...

21 CFR 120.20 - General.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false General. 120.20 Section 120.20 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.20 General...

21 CFR 120.20 - General.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false General. 120.20 Section 120.20 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.20 General...

21 CFR 120.12 - Records.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Records. 120.12 Section 120.12 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.12 Records. (a...

21 CFR 120.12 - Records.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Records. 120.12 Section 120.12 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.12 Records. (a...

13 CFR 120.10 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... Provider is an entity that contracts with a Lender or CDC to perform management, marketing, legal or other... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Definitions. 120.10 Section 120.10 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Definitions § 120.10...

22 CFR 120.14 - Person.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Person. 120.14 Section 120.14 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.14 Person. Person means a natural person as well as a corporation, business association, partnership, society, trust, or...

22 CFR 120.14 - Person.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Person. 120.14 Section 120.14 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.14 Person. Person means a natural person as well as a corporation, business association, partnership, society, trust, or...

22 CFR 120.20 - License.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false License. 120.20 Section 120.20 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.20 License. License means a document bearing the word “license” issued by the Directorate of Defense Trade...

22 CFR 120.20 - License.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false License. 120.20 Section 120.20 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.20 License. License means a document bearing the word “license” issued by the Directorate of Defense Trade...

22 CFR 120.20 - License.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false License. 120.20 Section 120.20 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.20 License. License means a document bearing the word “license” issued by the Directorate of Defense Trade...

22 CFR 120.14 - Person.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Person. 120.14 Section 120.14 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.14 Person. Person means a natural person as well as a corporation, business association, partnership, society, trust, or...

22 CFR 120.14 - Person.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Person. 120.14 Section 120.14 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.14 Person. Person means a natural person as well as a corporation, business association, partnership, society, trust, or...

22 CFR 120.40 - Affiliate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Affiliate. 120.40 Section 120.40 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.40 Affiliate. An affiliate of a registrant is a person that directly, or indirectly through one or more...

22 CFR 120.20 - License.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false License. 120.20 Section 120.20 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.20 License. License means a document bearing the word “license” issued by the Directorate of Defense Trade...

14 CFR 1264.120 - Discovery.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 5 2010-01-01 2010-01-01 false Discovery. 1264.120 Section 1264.120... PENALTIES ACT OF 1986 § 1264.120 Discovery. (a) The following types of discovery are authorized: (1..., discovery is available only as ordered by the presiding officer. The presiding officer shall regulate the...

A novel precursor system and its application to produce tin doped indium oxide.

PubMed

Veith, M; Bubel, C; Zimmer, M

2011-06-14

A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.

Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method

NASA Astrophysics Data System (ADS)

Lau, L. N.; Ibrahim, N. B.; Baqiah, H.

2015-08-01

This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.

Half-life of Xe120

NASA Astrophysics Data System (ADS)

Phillips, A. A.; Andreoiu, C.; Ball, G. C.; Bandyopadhyay, D.; Behr, J. A.; Chupp, T. E.; Finlay, P.; Garrett, P. E.; Grinyer, G. F.; Hackman, G.; Hayden, M. E.; Hyland, B.; Nuss-Warren, S. R.; Pearson, M. R.; Schumaker, M. A.; Smith, M. B.; Svensson, C. E.; Tardiff, E. R.; Valiente-Dobón, J. J.; Warner, T.

2006-08-01

We have measured the half-life of Xe120 using a high-purity germanium (HPGe) detector to monitor the 176, 178, and 762 keV γ rays from Xe120 β+ decay. The result, 46±0.6 min, differs significantly from the value 40±1 min reported by Andersson [Ark. Fys. 28, 37 (1964)]. We have also measured the half-lives of Cs120 and I120 to be 60±0.7 s and 82.1±0.6 min, respectively, both of which are consistent with previous measurements.

13 CFR 120.860 - Required objectives.

Code of Federal Regulations, 2010 CFR

2010-01-01

... Section 120.860 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) Project Economic Development Goals § 120.860 Required objectives. A Project must achieve at least one of the economic development objectives set forth in § 120.861 or § 120.862. ...

Leaching of indium from obsolete liquid crystal displays: Comparing grinding with electrical disintegration in context of LCA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dodbiba, Gjergj, E-mail: dodbiba@sys.t.u-tokyo.ac.jp; Nagai, Hiroki; Wang Lipang

2012-10-15

Highlights: Black-Right-Pointing-Pointer Two pre-treatment methods, prior to leaching of indium from obsolete LCD modules, were described. Black-Right-Pointing-Pointer Conventional grinding and electrical disintegration have been evaluated and compared in the context of LCA. Black-Right-Pointing-Pointer Experimental data on the leaching capacity for indium and the electricity consumption of equipment were inputted into the LCA model in order to compare the environmental performance of each method. Black-Right-Pointing-Pointer An estimate for the environmental performance was calculated as the sum of six impact categories. Black-Right-Pointing-Pointer Electrical disintegration method outperforms conventional grinding in all impact categories. - Abstract: In order to develop an effective recycling systemmore » for obsolete Liquid Crystal Displays (LCDs), which would enable both the leaching of indium (In) and the recovery of a pure glass fraction for recycling, an effective liberation or size-reduction method would be an important pre-treatment step. Therefore, in this study, two different types of liberation methods: (1) conventional grinding, and (2) electrical disintegration have been tested and evaluated in the context of Life Cycle Assessment (LCA). In other words, the above-mentioned methods were compared in order to find out the one that ensures the highest leaching capacity for indium, as well as the lowest environmental burden. One of the main findings of this study was that the electrical disintegration was the most effective liberation method, since it fully liberated the indium containing-layer, ensuring a leaching capacity of 968.5 mg-In/kg-LCD. In turn, the estimate for the environmental burden was approximately five times smaller when compared with the conventional grinding.« less

24 CFR 35.120 - Options.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 24 Housing and Urban Development 1 2010-04-01 2010-04-01 false Options. 35.120 Section 35.120... and Definitions for All Programs. § 35.120 Options. (a) Standard treatments. Where interim controls are required by this part, the designated party has the option to presume that lead-based paint or...

46 CFR 8.120 - Reciprocity.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 1 2011-10-01 2011-10-01 false Reciprocity. 8.120 Section 8.120 Shipping COAST GUARD... § 8.120 Reciprocity. (a) The Commandant may delegate authority to a classification society that has... determine reciprocity on a “case-by-case” basis. (b) In order to demonstrate that the conditions described...

46 CFR 8.120 - Reciprocity.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 1 2010-10-01 2010-10-01 false Reciprocity. 8.120 Section 8.120 Shipping COAST GUARD... § 8.120 Reciprocity. (a) The Commandant may delegate authority to a classification society that has... determine reciprocity on a “case-by-case” basis. (b) In order to demonstrate that the conditions described...

46 CFR 8.120 - Reciprocity.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 1 2012-10-01 2012-10-01 false Reciprocity. 8.120 Section 8.120 Shipping COAST GUARD... § 8.120 Reciprocity. (a) The Commandant may delegate authority to a classification society that has... determine reciprocity on a “case-by-case” basis. (b) In order to demonstrate that the conditions described...

46 CFR 8.120 - Reciprocity.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 1 2013-10-01 2013-10-01 false Reciprocity. 8.120 Section 8.120 Shipping COAST GUARD... § 8.120 Reciprocity. (a) The Commandant may delegate authority to a classification society that has... determine reciprocity on a “case-by-case” basis. (b) In order to demonstrate that the conditions described...

46 CFR 8.120 - Reciprocity.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 1 2014-10-01 2014-10-01 false Reciprocity. 8.120 Section 8.120 Shipping COAST GUARD... § 8.120 Reciprocity. (a) The Commandant may delegate authority to a classification society that has... determine reciprocity on a “case-by-case” basis. (b) In order to demonstrate that the conditions described...

Indium hydroxide to oxide decomposition observed in one nanocrystal during in situ transmission electron microscopy studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miehe, Gerhard; Lauterbach, Stefan; Kleebe, Hans-Joachim

The high-resolution transmission electron microscopy (HR-TEM) is used to study, in situ, spatially resolved decomposition in individual nanocrystals of metal hydroxides and oxyhydroxides. This case study reports on the decomposition of indium hydroxide (c-In(OH){sub 3}) to bixbyite-type indium oxide (c-In{sub 2}O{sub 3}). The electron beam is focused onto a single cube-shaped In(OH){sub 3} crystal of {l_brace}100{r_brace} morphology with ca. 35 nm edge length and a sequence of HR-TEM images was recorded during electron beam irradiation. The frame-by-frame analysis of video sequences allows for the in situ, time-resolved observation of the shape and orientation of the transformed crystals, which in turnmore » enables the evaluation of the kinetics of c-In{sub 2}O{sub 3} crystallization. Supplementary material (video of the transformation) related to this article can be found online at (10.1016/j.jssc.2012.09.022). After irradiation the shape of the parent cube-shaped crystal is preserved, however, its linear dimension (edge) is reduced by the factor 1.20. The corresponding spotted selected area electron diffraction (SAED) pattern representing zone [001] of c-In(OH){sub 3} is transformed to a diffuse strongly textured ring-like pattern of c-In{sub 2}O{sub 3} that indicates the transformed cube is no longer a single crystal but is disintegrated into individual c-In{sub 2}O{sub 3} domains with the size of about 5-10 nm. The induction time of approximately 15 s is estimated from the time-resolved Fourier transforms. The volume fraction of the transformed phase (c-In{sub 2}O{sub 3}), calculated from the shrinkage of the parent c-In(OH){sub 3} crystal in the recorded HR-TEM images, is used as a measure of the kinetics of c-In{sub 2}O{sub 3} crystallization within the framework of Avrami-Erofeev formalism. The Avrami exponent of {approx}3 is characteristic for a reaction mechanism with fast nucleation at the beginning of the reaction and subsequent three

22 CFR 120.17 - Export.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Export. 120.17 Section 120.17 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.17 Export. (a) Export means: (1) Sending or taking a defense article out of the United States in any manner, except by...

22 CFR 120.17 - Export.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Export. 120.17 Section 120.17 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.17 Export. (a) Export means: (1) Sending or taking a defense article out of the United States in any manner, except by...

22 CFR 120.17 - Export.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Export. 120.17 Section 120.17 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.17 Export. (a) Export means: (1) Sending or taking a defense article out of the United States in any manner, except by...

22 CFR 120.17 - Export.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Export. 120.17 Section 120.17 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.17 Export. (a) Export means: (1) Sending or taking a defense article out of the United States in any manner, except by...

22 CFR 120.17 - Export.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Export. 120.17 Section 120.17 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.17 Export. (a) Export means: (1) Sending or taking a defense article out of the United States in any manner, except by...

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma

2015-03-15

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In{sub 0.55}Ga{sub 0.45}N over non-polar (11-20) a-plane In{sub 0.17}Ga{sub 0.83}N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of In{sub x}Ga{sub 1−x}N alloys,more » which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.« less

Enhanced photo-catalytic activity of ordered mesoporous indium oxide nanocrystals in the conversion of CO2 into methanol.

PubMed

Gondal, M A; Dastageer, M A; Oloore, L E; Baig, U; Rashid, S G

2017-07-03

Ordered mesoporous indium oxide nanocrystal (m-In 2 O 3 ) was synthesized by nanocasting technique, in which highly ordered mesoporous silca (SBA-15) was used as structural matrix. X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) Brunauer-Emmett-Teller (BET) and Barrett-Joyner-Halanda (BJH) studies were carried out on m-In 2 O 3 and the results revealed that this material has a highly ordered mesoporous surface with reduced grain size, increased surface area and surface volume compared to the non porous indium oxide. The diffuse reluctance spectrum exhibited substantially improved light absorption efficiency in m-In 2 O 3 compared to normal indium oxide, however, no considerable change in the band gap energies of these materials was observed. When m-In 2 O 3 was used as a photo-catalyst in the photo-catalytic process of converting carbon dioxide (CO 2 ) into methanol under the pulsed laser radiation of 266-nm wavelengths, an enhanced photo-catalytic activity with the quantum efficiency of 4.5% and conversion efficiency of 46.3% were observed. It was found that the methanol production yield in this chemical process is as high as 485 µlg -1 h -1 after 150 min of irradiation, which is substantially higher than the yields reported in the literature. It is quite clear from the results that the introduction of mesoporosity in indium oxide, and the consequent enhancement of positive attributes required for a photo-catalyst, transformed photo-catalytically weak indium oxide into an effective photo-catalyst for the conversion of CO 2 into methanol.

INDIUM AND ZINC MEDIATED ONE-ATOM CARBOCYCLE ENLARGEMENT IN WATER. (R822668)

EPA Science Inventory

Abstract

Six-, seven-, eight-membered rings are enlarged by one carbon-atom into seven-, eight- and nine-membered ring derivatives respectively, via indium or zinc mediated reactions in aqueous medium.

Measuring systolic ankle and toe pressure using the strain gauge technique--a comparison study between mercury and indium-gallium strain gauges.

PubMed

Broholm, Rikke; Wiinberg, Niels; Simonsen, Lene

2014-09-01

Measurement of the ankle and toe pressures are often performed using a plethysmograph, compression cuffs and a strain gauge. Usually, the strain gauge contains mercury but other alternatives exist. From 2014, the mercury-containing strain gauge will no longer be available in the European Union. The aim of this study was to compare an indium-gallium strain gauge to the established mercury-containing strain gauge. Consecutive patients referred to the Department of Clinical Physiology and Nuclear Medicine at Bispebjerg and Frederiksberg Hospitals for measurements of systolic ankle and toe pressures volunteered for the study. Ankle and toe pressures were measured twice with the mercury and the indium-gallium strain gauge in random order. Comparison of the correlation between the mean pressure using the mercury and the indium-gallium device and the difference between the two devices was performed for both toe and ankle level. A total of 53 patients were included (36 male). Mean age was 69 (range, 45-92 years). Mean pressures at toe and ankle level with the mercury and the indium-gallium strain gauges were 77 (range, 0-180) mm Hg and 113 (range, 15-190) mm Hg, respectively. Comparison between the mercury and the indium-gallium strain gauge showed a difference in toe blood pressure values of - 0.7 mm Hg (SD: 7.0). At the ankle level, a difference of 2.0 mm Hg (SD: 8.6) was found. The two different devices agree sufficiently in the measurements of systolic ankle and toe pressure for the indium-gallium strain gauge to replace the mercury strain gauge.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

DOEpatents

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Pulmonary uptake in Indium-111 leukocyte imaging: clinical significance in patients with suspected occult infections

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cook, P.S.; Datz, F.L.; Disbro, M.A.

1984-02-01

A retrospective review was undertaken to evaluate the frequency and significance of pulmonary activity noted on 306 indium-111 leukocyte studies involving 232 patients with suspected occult infections. Forty-eight studies showed pulmonary activity in one of two patterns of uptake, focal or diffuse. Fourteen of 27 studies (52%) with focal uptake and two of 21 studies (10%) with diffuse uptake were associated with infectious processes. Lung uptake of indium-111-labeled leukocytes was a poor predictor of pulmonary infection in patients studied for occult infection, although the focal pattern was more likely than the diffuse pattern to be associated with infection.

Application of Copper Indium Gallium Diselenide Photovoltaic Cells to Extend the Endurance and Capabilities of Unmanned Aerial Vehicles

DTIC Science & Technology

2009-09-01

Group V element to make them n or p material. Another common group of semiconductors are called III–V compounds , such as gallium arsenide (GaAs), or...these compounds used for photovoltaics are Cadmium Telluride (CdTe), and Copper Indium Gallium DiSelenide, commonly referred to as CIGS [49]. Figure...INDIUM GALLIUM DISELENIDE PHOTOVOLTAIC CELLS TO EXTEND THE ENDURANCE AND CAPABILITIES OF UNMANNED AERIAL VEHICLES by William R. Hurd

Indium-mediated asymmetric barbier-type allylations: additions to aldehydes and ketones and mechanistic investigation of the organoindium reagents.

PubMed

Haddad, Terra D; Hirayama, Lacie C; Singaram, Bakthan

2010-02-05

We report a simple, efficient, and general method for the indium-mediated enantioselective allylation of aromatic and aliphatic aldehydes and ketones under Barbier-type conditions in a one-pot synthesis affording the corresponding chiral alcohol products in very good yield (up to 99%) and enantiomeric excess (up to 93%). Our method is able to tolerate various functional groups, such as esters, nitriles, and phenols. Additionally, more substituted allyl bromides, such as crotyl and cinnamyl bromide, can be used providing moderate enantioselectivity (72% and 56%, respectively) and excellent diastereoselectivity when employing cinnamyl bromide (>95/5 anti/syn). However, the distereoselectivity when using crotyl bromide was poor and other functionalized allyl bromides under our method afforded low enantioselectivities for the alcohol products. In these types of indium-mediated additions, solvent plays a major role in determining the nature of the organoindium intermediate and we observed the susceptibility of some allylindium intermediates to hydrolysis in protic solvents. Under our reaction conditions using a polar aprotic solvent, we suggest that an allylindium(III) species is the active allylating intermediate. In addition, we have observed the presence of a shiny, indium(0) nugget throughout the reaction, irrespective of the stoichiometry, indicating disproportionation of indium halide byproduct formed during the reaction.

Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

NASA Astrophysics Data System (ADS)

Trybus, Elaissa

The objective of the proposed research is to establish the technology for material growth by molecular beam epitaxy (MBE) and fabrication of indium gallium nitride/gallium nitride (InxGa1-xN/GaN) heterojunction solar cells. InxGa1-xN solar cells have the potential to span 90% of the solar spectrum, however there has been no success with high indium (In) incorporation and only limited success with low In incorporation InxGa1-xN. Therefore, this present work focuses on 15--30% In incorporation leading to a bandgap value of 2.3--2.8 eV. This work will exploit the revision of the indium nitride (InN) bandgap value of 0.68 eV, which expands the range of the optical emission of nitride-based devices from ultraviolet to near infrared regions, by developing transparent In xGa1-xN solar cells outside the visible spectrum. Photovoltaic devices with a bandgap greater than 2.0 eV are attractive because over half the available power in the solar spectrum is above the photon energy of 2.0 eV. The ability of InxGa1-xN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics. This work presents results confirming the revised bandgap of InN grown on germanium (Ge) substrates and the effects of oxygen contamination on the bandgap. This research adds to the historical discussion of the bandgap value of InN. Using the metal modulated epitaxy (MME) technique in a new, ultra-clean refurbished MBE system, an innovative growth regime is established where In and Ga phase separation is diminished by increasing the growth rate for In xGa1-xN. The MME technique modulates the metal shutters with a fixed duty cycle while maintaining a constant nitrogen flux and proves effective for improving crystal quality and p-type doping. InxGa 1-xN/GaN heterojunction solar cells require p-type doping to create the p-n subcell collecting junction, which facilitates current collection through the electrostatic field created by spatially separated ionized

SU-E-I-14: Comparison of Iodine-Labeled and Indium-Labeled Antibody Biodistributions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, L

2014-06-01

Purpose: It is often assumed that animal biodistributions of novel proteins are not dependent upon the radiolabel used in their determination. In units of percent injected dose per gram of tissue (%ID/g), organ uptake results (u) may be obtained using either iodine or metal as radioactive labels. Iodination is preferred as it is a one-step process whereas metal labeling requires two chemical procedures and therefore more protein material. It is important to test whether the radioactive tag leads to variation in the uptake value. Methods: Uptakes of 3antibodies to Carcinoembryonic Antigen (CEA) were evaluated in a nude mouse model bearingmore » 150 to 300 mg LS174T human colon cancer xenografts. Antibodies included diabody (56 kDa), minibody (80kDa) and intact M5A (150 kDa) anti-CEA cognates. Both radioiodine and indium-111 labels were used with uptakes evaluated at 7 time(t) points out to 96 h. Ratios (R) of u(iodine-label)/u(indium-label) were determined for liver, spleen, kidneys, lung and tumor. Results: Hepatic loss was rapid for diabody and minibody; by 24 h their R values were only 2%; i.e., uptake of iodine was 2% of that of indium for these 2 antibodies. By contrast, R for the intact cognate was 50% at that time point. Splenic results were similar. Tumor uptake ratios did not depend upon the antibody type and were 50% at 24 h. Conclusions: Relatively rapid loss of iodine relative to indium in liver and spleen was observed in lower mass antibodies. Tumor ratios were larger and independent of antibody type. Aside from tumor, the R ratio of uptakes depended on the antibody type. R values decreased monotonically with time in all tissues and for all cognates. Using this ratio, one can possibly correct iodine-based u (t) results so that they resemble radiometal-derived biodistributions.« less

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

NASA Astrophysics Data System (ADS)

Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

2013-09-01

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

42 CFR 421.120 - Performance criteria.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 42 Public Health 3 2013-10-01 2013-10-01 false Performance criteria. 421.120 Section 421.120... (CONTINUED) MEDICARE PROGRAM (CONTINUED) MEDICARE CONTRACTING Intermediaries § 421.120 Performance criteria. (a) Application of performance criteria. As part of the intermediary evaluations authorized by...

42 CFR 421.120 - Performance criteria.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 42 Public Health 3 2012-10-01 2012-10-01 false Performance criteria. 421.120 Section 421.120... (CONTINUED) MEDICARE PROGRAM (CONTINUED) MEDICARE CONTRACTING Intermediaries § 421.120 Performance criteria. (a) Application of performance criteria. As part of the intermediary evaluations authorized by...

42 CFR 421.120 - Performance criteria.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 42 Public Health 3 2014-10-01 2014-10-01 false Performance criteria. 421.120 Section 421.120... (CONTINUED) MEDICARE PROGRAM (CONTINUED) MEDICARE CONTRACTING Intermediaries § 421.120 Performance criteria. (a) Application of performance criteria. As part of the intermediary evaluations authorized by...

The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

PubMed Central

Boukhvalov, Danil W.; Gürbulak, Bekir; Duman, Songül; Wang, Lin; Caputi, Lorenzo S.; Chiarello, Gennaro; Cupolillo, Anna

2017-01-01

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed. PMID:29113090

Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Costen, Nick; Allen, Christine

2007-01-01

This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

The use of indium-111 labeled platelet scanning for the detection of asymptomatic deep venous thrombosis in a high risk population

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siegel, R.S.; Rae, J.L.; Ryan, N.L.

Five hundred indium-111 labeled platelet imaging studies (387 donor and 113 autologous) were performed postoperatively in 473 patients who had undergone total hip replacement, total knee replacement, or internal fixation of a hip fracture to detect occult deep venous thrombosis. All patients had been anticoagulated prophylactically with aspirin, warfarin sodium (Coumadin), or dextran. Thirty-four possible cases of proximal deep venous thrombosis were identified in 28 asymptomatic patients. To verify the scan results, 31 venograms were performed in 25 patients (three refused). In 21 of 31 cases, totally occlusive thrombi were detected; in 5 cases, partially occlusive thrombi were detected; inmore » 5 cases, no thrombus was seen. No patient who had a negative scan nor any patient who had a verified positive scan (and received appropriate heparin therapy) subsequently developed symptoms or signs of pulmonary embolism. One hundred forty-one indium study patients also underwent Doppler ultrasonography/impedance plethysmography (Doppler/IPG) as a comparative non-invasive technique. In 137 cases, the results of the indium study and Doppler/IPG studies were congruent. The indium study had no false negative results that were detected by Doppler/IPG. No patient had any clinically evident toxicity. These results suggest that indium-111 labeled platelet scanning is a safe, noninvasive means for identifying DVT in high risk patients.« less

7 CFR 762.120 - Applicant eligibility.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 7 Agriculture 7 2012-01-01 2012-01-01 false Applicant eligibility. 762.120 Section 762.120 Agriculture Regulations of the Department of Agriculture (Continued) FARM SERVICE AGENCY, DEPARTMENT OF AGRICULTURE SPECIAL PROGRAMS GUARANTEED FARM LOANS § 762.120 Applicant eligibility. Unless otherwise provided...

7 CFR 762.120 - Applicant eligibility.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 7 Agriculture 7 2014-01-01 2014-01-01 false Applicant eligibility. 762.120 Section 762.120 Agriculture Regulations of the Department of Agriculture (Continued) FARM SERVICE AGENCY, DEPARTMENT OF AGRICULTURE SPECIAL PROGRAMS GUARANTEED FARM LOANS § 762.120 Applicant eligibility. Unless otherwise provided...

10 CFR 76.120 - Reporting requirements.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 10 Energy 2 2012-01-01 2012-01-01 false Reporting requirements. 76.120 Section 76.120 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Reports and Inspections § 76.120 Reporting requirements. (a) Immediate report. The Corporation shall notify the NRC...

10 CFR 76.120 - Reporting requirements.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 10 Energy 2 2013-01-01 2013-01-01 false Reporting requirements. 76.120 Section 76.120 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Reports and Inspections § 76.120 Reporting requirements. (a) Immediate report. The Corporation shall notify the NRC...

10 CFR 76.120 - Reporting requirements.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 10 Energy 2 2014-01-01 2014-01-01 false Reporting requirements. 76.120 Section 76.120 Energy NUCLEAR REGULATORY COMMISSION (CONTINUED) CERTIFICATION OF GASEOUS DIFFUSION PLANTS Reports and Inspections § 76.120 Reporting requirements. (a) Immediate report. The Corporation shall notify the NRC...

13 CFR 120.911 - Land contributions.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Land contributions. 120.911 Section 120.911 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) The Borrower's Contribution § 120.911 Land contributions. The Borrower's...

13 CFR 120.911 - Land contributions.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Land contributions. 120.911 Section 120.911 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) The Borrower's Contribution § 120.911 Land contributions. The Borrower's...

13 CFR 120.911 - Land contributions.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Land contributions. 120.911 Section 120.911 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) The Borrower's Contribution § 120.911 Land contributions. The Borrower's...

13 CFR 120.911 - Land contributions.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Land contributions. 120.911 Section 120.911 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) The Borrower's Contribution § 120.911 Land contributions. The Borrower's...

13 CFR 120.911 - Land contributions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Land contributions. 120.911 Section 120.911 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) The Borrower's Contribution § 120.911 Land contributions. The Borrower's...

46 CFR 120.378 - Ungrounded systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... and Distribution Systems § 120.378 Ungrounded systems. Each ungrounded system must be provided with a suitably sensitive ground detection system, located at the respective switchboard, that provides continuous... 46 Shipping 4 2010-10-01 2010-10-01 false Ungrounded systems. 120.378 Section 120.378 Shipping...

46 CFR 120.378 - Ungrounded systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Ungrounded systems. 120.378 Section 120.378 Shipping... and Distribution Systems § 120.378 Ungrounded systems. Each ungrounded system must be provided with a suitably sensitive ground detection system, located at the respective switchboard, that provides continuous...

46 CFR 120.378 - Ungrounded systems.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Ungrounded systems. 120.378 Section 120.378 Shipping... and Distribution Systems § 120.378 Ungrounded systems. Each ungrounded system must be provided with a suitably sensitive ground detection system, located at the respective switchboard, that provides continuous...

46 CFR 120.378 - Ungrounded systems.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Ungrounded systems. 120.378 Section 120.378 Shipping... and Distribution Systems § 120.378 Ungrounded systems. Each ungrounded system must be provided with a suitably sensitive ground detection system, located at the respective switchboard, that provides continuous...

13 CFR 120.390 - Revolving credit.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Revolving credit. 120.390 Section 120.390 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Caplines Program § 120.390 Revolving credit. (a) CapLines finances eligible small businesses...

13 CFR 120.390 - Revolving credit.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Revolving credit. 120.390 Section 120.390 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Caplines Program § 120.390 Revolving credit. (a) CapLines finances eligible small businesses...

13 CFR 120.390 - Revolving credit.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Revolving credit. 120.390 Section 120.390 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Caplines Program § 120.390 Revolving credit. (a) CapLines finances eligible small businesses...

13 CFR 120.390 - Revolving credit.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Revolving credit. 120.390 Section 120.390 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Caplines Program § 120.390 Revolving credit. (a) CapLines finances eligible small businesses...

13 CFR 120.390 - Revolving credit.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Revolving credit. 120.390 Section 120.390 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Caplines Program § 120.390 Revolving credit. (a) CapLines finances eligible small businesses...

13 CFR 120.160 - Loan conditions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Loan conditions. 120.160 Section 120.160 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Policies Applying to All Business Loans Credit Criteria for Sba Loans § 120.160 Loan conditions. The following...

22 CFR 120.16 - Foreign person.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Foreign person. 120.16 Section 120.16 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.16... also means any foreign corporation, business association, partnership, trust, society or any other...

22 CFR 120.23 - Distribution agreement.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Distribution agreement. 120.23 Section 120.23 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.23 Distribution agreement. An agreement (e.g., a contract) to establish a warehouse or...

22 CFR 120.23 - Distribution agreement.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Distribution agreement. 120.23 Section 120.23 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.23 Distribution agreement. An agreement (e.g., a contract) to establish a warehouse or...

22 CFR 120.23 - Distribution agreement.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Distribution agreement. 120.23 Section 120.23 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.23 Distribution agreement. An agreement (e.g., a contract) to establish a warehouse or...

13 CFR 120.170 - Flood insurance.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Flood insurance. 120.170 Section 120.170 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Policies Applying to All Business Loans Requirements Imposed Under Other Laws and Orders § 120.170 Flood insurance...

13 CFR 120.174 - Earthquake hazards.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Earthquake hazards. 120.174 Section 120.174 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Policies Applying to All Business Loans Requirements Imposed Under Other Laws and Orders § 120.174 Earthquake...

21 CFR 640.120 - Alternative procedures.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 7 2010-04-01 2010-04-01 false Alternative procedures. 640.120 Section 640.120 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) BIOLOGICS ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Alternative Procedures § 640.120...

21 CFR 640.120 - Alternative procedures.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 7 2011-04-01 2010-04-01 true Alternative procedures. 640.120 Section 640.120 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) BIOLOGICS ADDITIONAL STANDARDS FOR HUMAN BLOOD AND BLOOD PRODUCTS Alternative Procedures § 640.120...

22 CFR 120.23 - Distribution agreement.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Distribution agreement. 120.23 Section 120.23 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.23 Distribution agreement. An agreement (e.g., a contract) to establish a warehouse or...

22 CFR 120.38 - Maintenance levels.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Maintenance levels. 120.38 Section 120.38 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.38 Maintenance levels. (a) Organizational-level maintenance (or basic-level maintenance) is the...

22 CFR 120.23 - Distribution agreement.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Distribution agreement. 120.23 Section 120.23 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.23 Distribution agreement. An agreement (e.g., a contract) to establish a warehouse or...

42 CFR 421.120 - Performance criteria.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 42 Public Health 3 2010-10-01 2010-10-01 false Performance criteria. 421.120 Section 421.120... (CONTINUED) MEDICARE PROGRAM MEDICARE CONTRACTING Intermediaries § 421.120 Performance criteria. (a) Application of performance criteria. As part of the intermediary evaluations authorized by section 1816(f) of...

42 CFR 421.120 - Performance criteria.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 42 Public Health 3 2011-10-01 2011-10-01 false Performance criteria. 421.120 Section 421.120... (CONTINUED) MEDICARE PROGRAM MEDICARE CONTRACTING Intermediaries § 421.120 Performance criteria. (a) Application of performance criteria. As part of the intermediary evaluations authorized by section 1816(f) of...

13 CFR 120.937 - Assumption.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Assumption. 120.937 Section 120.937 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company... prior written approval. ...

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

Reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel and tin**

PubMed Central

Assael, Marc J.; Chatzimichailidis, Arsenios; Antoniadis, Konstantinos D.; Wakeham, William A.; Huber, Marcia L.; Fukuyama, Hiroyuki

2017-01-01

The available experimental data for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin has been critically examined with the intention of establishing thermal conductivity reference correlations. All experimental data have been categorized into primary and secondary data according to the quality of measurement specified by a series of criteria. The proposed standard reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin are respectively characterized by uncertainties of 9.8, 15.9, 9.7, 13.7, 16.9, 7.7, and 12.6% at the 95% confidence level. PMID:29353915

13 CFR 120.3 - Pilot programs.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Pilot programs. 120.3 Section 120.3 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS General Descriptions of Sba's Business Loan Programs § 120.3 Pilot programs. The Administrator of SBA may from time to...

34 CFR 300.120 - Monitoring activities.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 34 Education 2 2013-07-01 2013-07-01 false Monitoring activities. 300.120 Section 300.120... CHILDREN WITH DISABILITIES State Eligibility Least Restrictive Environment (lre) § 300.120 Monitoring activities. (a) The SEA must carry out activities to ensure that § 300.114 is implemented by each public...

34 CFR 300.120 - Monitoring activities.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 34 Education 2 2012-07-01 2012-07-01 false Monitoring activities. 300.120 Section 300.120... CHILDREN WITH DISABILITIES State Eligibility Least Restrictive Environment (lre) § 300.120 Monitoring activities. (a) The SEA must carry out activities to ensure that § 300.114 is implemented by each public...

28 CFR 0.120 - General functions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 28 Judicial Administration 1 2010-07-01 2010-07-01 false General functions. 0.120 Section 0.120... Community Oriented Policing Services § 0.120 General functions. The Director, Office of Community Oriented Policing Services shall: (a) Exercise the powers and perform the functions vested in the Attorney General...

21 CFR 820.120 - Device labeling.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Device labeling. 820.120 Section 820.120 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES QUALITY SYSTEM REGULATION Labeling and Packaging Control § 820.120 Device labeling. Each manufacturer...

46 CFR 120.350 - Batteries-general.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Batteries-general. 120.350 Section 120.350 Shipping... and Distribution Systems § 120.350 Batteries—general. (a) Where provisions are made for charging batteries, there must be natural or induced ventilation sufficient to dissipate the gases generated. (b...

46 CFR 133.120 - Launching stations.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Launching stations. 133.120 Section 133.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS LIFESAVING SYSTEMS Requirements for All OSVs § 133.120 Launching stations. (a) Each launching station must be positioned to ensure...

46 CFR 133.120 - Launching stations.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Launching stations. 133.120 Section 133.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS LIFESAVING SYSTEMS Requirements for All OSVs § 133.120 Launching stations. (a) Each launching station must be positioned to ensure...

13 CFR 120.951 - Selling agent.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Selling agent. 120.951 Section 120.951 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) Debenture Sales and Service Agents § 120.951 Selling agent. The CDC, with SBA...

13 CFR 120.951 - Selling agent.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Selling agent. 120.951 Section 120.951 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) Debenture Sales and Service Agents § 120.951 Selling agent. The CDC, with SBA...

13 CFR 120.951 - Selling agent.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Selling agent. 120.951 Section 120.951 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) Debenture Sales and Service Agents § 120.951 Selling agent. The CDC, with SBA...

13 CFR 120.951 - Selling agent.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Selling agent. 120.951 Section 120.951 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) Debenture Sales and Service Agents § 120.951 Selling agent. The CDC, with SBA...

13 CFR 120.951 - Selling agent.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Selling agent. 120.951 Section 120.951 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) Debenture Sales and Service Agents § 120.951 Selling agent. The CDC, with SBA...

13 CFR 120.3 - Pilot programs.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Pilot programs. 120.3 Section 120.3 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS General Descriptions of Sba's Business Loan Programs § 120.3 Pilot programs. The Administrator of SBA may from time to...

46 CFR 120.350 - Batteries-general.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Batteries-general. 120.350 Section 120.350 Shipping... and Distribution Systems § 120.350 Batteries—general. (a) Where provisions are made for charging batteries, there must be natural or induced ventilation sufficient to dissipate the gases generated. (b...

46 CFR 120.350 - Batteries-general.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Batteries-general. 120.350 Section 120.350 Shipping... and Distribution Systems § 120.350 Batteries—general. (a) Where provisions are made for charging batteries, there must be natural or induced ventilation sufficient to dissipate the gases generated. (b...

46 CFR 120.350 - Batteries-general.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Batteries-general. 120.350 Section 120.350 Shipping... and Distribution Systems § 120.350 Batteries—general. (a) Where provisions are made for charging batteries, there must be natural or induced ventilation sufficient to dissipate the gases generated. (b...

46 CFR 120.350 - Batteries-general.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Batteries-general. 120.350 Section 120.350 Shipping... and Distribution Systems § 120.350 Batteries—general. (a) Where provisions are made for charging batteries, there must be natural or induced ventilation sufficient to dissipate the gases generated. (b...

13 CFR 120.1702 - Program fee.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Program fee. 120.1702 Section 120.1702 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Establishment of SBA Secondary Market Guarantee Program for First Lien Position 504 Loan Pools § 120.1702 Program fee. Ongoing...

7 CFR 1260.120 - Beef products.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 10 2010-01-01 2010-01-01 false Beef products. 1260.120 Section 1260.120 Agriculture... Promotion and Research Order Definitions § 1260.120 Beef products. Beef products means edible products produced in whole or in part from beef, exclusive of milk and products made therefrom. ...

46 CFR 130.120 - Propulsion control.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Propulsion control. 130.120 Section 130.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS VESSEL CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Vessel Control § 130.120 Propulsion control. (a) Each vessel must have— (1...

46 CFR 130.120 - Propulsion control.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Propulsion control. 130.120 Section 130.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS VESSEL CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Vessel Control § 130.120 Propulsion control. (a) Each vessel must have— (1...

46 CFR 130.120 - Propulsion control.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Propulsion control. 130.120 Section 130.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS VESSEL CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Vessel Control § 130.120 Propulsion control. (a) Each vessel must have— (1...

46 CFR 130.120 - Propulsion control.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Propulsion control. 130.120 Section 130.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS VESSEL CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Vessel Control § 130.120 Propulsion control. (a) Each vessel must have— (1...

46 CFR 130.120 - Propulsion control.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Propulsion control. 130.120 Section 130.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS VESSEL CONTROL, AND MISCELLANEOUS EQUIPMENT AND SYSTEMS Vessel Control § 130.120 Propulsion control. (a) Each vessel must have— (1...

22 CFR 120.39 - Regular employee.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Regular employee. 120.39 Section 120.39 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.39 Regular employee. (a) A regular employee means for purposes of this subchapter: (1) An individual...

22 CFR 120.13 - United States.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false United States. 120.13 Section 120.13 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.13 United States. United States, when used in the geographical sense, includes the several states, the...

22 CFR 120.26 - Presiding Official.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Presiding Official. 120.26 Section 120.26 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.26 Presiding Official. Presiding Official means a person authorized by the U.S. Government to...

22 CFR 120.26 - Presiding Official.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Presiding Official. 120.26 Section 120.26 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.26 Presiding Official. Presiding Official means a person authorized by the U.S. Government to...

22 CFR 120.26 - Presiding Official.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Presiding Official. 120.26 Section 120.26 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.26 Presiding Official. Presiding Official means a person authorized by the U.S. Government to...

22 CFR 120.39 - Regular employee.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Regular employee. 120.39 Section 120.39 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.39 Regular employee. (a) A regular employee means for purposes of this subchapter: (1) An individual...

22 CFR 120.39 - Regular employee.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Regular employee. 120.39 Section 120.39 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.39 Regular employee. (a) A regular employee means for purposes of this subchapter: (1) An individual...

22 CFR 120.13 - United States.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false United States. 120.13 Section 120.13 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.13 United States. United States, when used in the geographical sense, includes the several states, the...

22 CFR 120.13 - United States.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false United States. 120.13 Section 120.13 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.13 United States. United States, when used in the geographical sense, includes the several states, the...

22 CFR 120.13 - United States.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false United States. 120.13 Section 120.13 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.13 United States. United States, when used in the geographical sense, includes the several states, the...

22 CFR 120.26 - Presiding Official.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Presiding Official. 120.26 Section 120.26 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.26 Presiding Official. Presiding Official means a person authorized by the U.S. Government to...

22 CFR 120.26 - Presiding Official.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Presiding Official. 120.26 Section 120.26 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.26 Presiding Official. Presiding Official means a person authorized by the U.S. Government to...

22 CFR 120.4 - Commodity jurisdiction.

Code of Federal Regulations, 2013 CFR

2013-04-01

... with §§ 120.2, 120.3, and 120.4, entails consultation among the Departments of State, Defense, Commerce... Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS.... Munitions List. The Department must provide notice to Congress at least 30 days before any item is removed...

22 CFR 120.4 - Commodity jurisdiction.

Code of Federal Regulations, 2011 CFR

2011-04-01

... with §§ 120.2, 120.3, and 120.4, entails consultation among the Departments of State, Defense, Commerce... Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS.... Munitions List. The Department must provide notice to Congress at least 30 days before any item is removed...

22 CFR 120.4 - Commodity jurisdiction.

Code of Federal Regulations, 2014 CFR

2014-04-01

... with §§ 120.2, 120.3, and 120.4, entails consultation among the Departments of State, Defense, Commerce... Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS.... Munitions List. The Department must provide notice to Congress at least 30 days before any item is removed...

22 CFR 120.4 - Commodity jurisdiction.

Code of Federal Regulations, 2012 CFR

2012-04-01

... with §§ 120.2, 120.3, and 120.4, entails consultation among the Departments of State, Defense, Commerce... Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS.... Munitions List. The Department must provide notice to Congress at least 30 days before any item is removed...

22 CFR 120.41 - Specially designed.

Code of Federal Regulations, 2014 CFR

2014-04-01

..., integration design, layouts. Note 3 to paragraph (b)(3): Commodities in “production” that are subsequently... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Specially designed. 120.41 Section 120.41... § 120.41 Specially designed. (a) Except for commodities or software described in paragraph (b) of this...

13 CFR 120.932 - Interest rate.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Interest rate. 120.932 Section 120.932 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) 504 Loans and Debentures § 120.932 Interest rate. The interest rate of the 504 Loan...

7 CFR 1.20 - Annual report.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 7 Agriculture 1 2013-01-01 2013-01-01 false Annual report. 1.20 Section 1.20 Agriculture Office of the Secretary of Agriculture ADMINISTRATIVE REGULATIONS Official Records § 1.20 Annual report. (a) Each agency of the Department shall compile the following Freedom of Information Act statistics on a...

46 CFR 120.390 - Shore power.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Shore power. 120.390 Section 120.390 Shipping COAST... PASSENGERS OR WITH OVERNIGHT ACCOMMODATIONS FOR MORE THAN 49 PASSENGERS ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 120.390 Shore power. A vessel with an electrical system operating at more...

46 CFR 120.310 - Power sources.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Power sources. 120.310 Section 120.310 Shipping COAST... PASSENGERS OR WITH OVERNIGHT ACCOMMODATIONS FOR MORE THAN 49 PASSENGERS ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 120.310 Power sources. (a)(1) Each vessel that relies on electricity to...

16 CFR 1.20 - Alternative procedures.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Alternative procedures. 1.20 Section 1.20 Commercial Practices FEDERAL TRADE COMMISSION ORGANIZATION, PROCEDURES AND RULES OF PRACTICE GENERAL PROCEDURES Rules and Rulemaking Under Section 18(a)(1)(B) of the FTC Act § 1.20 Alternative procedures. If...

46 CFR 120.390 - Shore power.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Shore power. 120.390 Section 120.390 Shipping COAST... PASSENGERS OR WITH OVERNIGHT ACCOMMODATIONS FOR MORE THAN 49 PASSENGERS ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 120.390 Shore power. A vessel with an electrical system operating at more...

46 CFR 120.310 - Power sources.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Power sources. 120.310 Section 120.310 Shipping COAST... PASSENGERS OR WITH OVERNIGHT ACCOMMODATIONS FOR MORE THAN 49 PASSENGERS ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 120.310 Power sources. (a)(1) Each vessel that relies on electricity to...

46 CFR 120.354 - Battery installations.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Battery installations. 120.354 Section 120.354 Shipping... and Distribution Systems § 120.354 Battery installations. (a) Large batteries. Each large battery installation must be located in a locker, room or enclosed box solely dedicated to the storage of batteries...

46 CFR 120.352 - Battery categories.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Battery categories. 120.352 Section 120.352 Shipping... and Distribution Systems § 120.352 Battery categories. This section applies to batteries installed to... sources of power to final emergency loads. (a) Large. A large battery installation is one connected to a...

13 CFR 120.932 - Interest rate.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Interest rate. 120.932 Section 120.932 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) 504 Loans and Debentures § 120.932 Interest rate. The interest rate of the 504 Loan...

13 CFR 120.932 - Interest rate.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Interest rate. 120.932 Section 120.932 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) 504 Loans and Debentures § 120.932 Interest rate. The interest rate of the 504 Loan...

13 CFR 120.932 - Interest rate.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Interest rate. 120.932 Section 120.932 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) 504 Loans and Debentures § 120.932 Interest rate. The interest rate of the 504 Loan...

21 CFR 120.10 - Corrective actions.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Corrective actions. 120.10 Section 120.10 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.10 Corrective...

21 CFR 120.10 - Corrective actions.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Corrective actions. 120.10 Section 120.10 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.10 Corrective...

21 CFR 120.24 - Process controls.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Process controls. 120.24 Section 120.24 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.24 Process...

21 CFR 120.10 - Corrective actions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Corrective actions. 120.10 Section 120.10 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.10 Corrective...

21 CFR 120.10 - Corrective actions.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Corrective actions. 120.10 Section 120.10 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.10 Corrective...

46 CFR 120.354 - Battery installations.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Battery installations. 120.354 Section 120.354 Shipping... and Distribution Systems § 120.354 Battery installations. (a) Large batteries. Each large battery installation must be located in a locker, room or enclosed box solely dedicated to the storage of batteries...

46 CFR 120.352 - Battery categories.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Battery categories. 120.352 Section 120.352 Shipping... and Distribution Systems § 120.352 Battery categories. This section applies to batteries installed to... sources of power to final emergency loads. (a) Large. A large battery installation is one connected to a...

46 CFR 120.352 - Battery categories.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Battery categories. 120.352 Section 120.352 Shipping... and Distribution Systems § 120.352 Battery categories. This section applies to batteries installed to... sources of power to final emergency loads. (a) Large. A large battery installation is one connected to a...

46 CFR 120.354 - Battery installations.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Battery installations. 120.354 Section 120.354 Shipping... and Distribution Systems § 120.354 Battery installations. (a) Large batteries. Each large battery installation must be located in a locker, room or enclosed box solely dedicated to the storage of batteries...

46 CFR 120.352 - Battery categories.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Battery categories. 120.352 Section 120.352 Shipping... and Distribution Systems § 120.352 Battery categories. This section applies to batteries installed to... sources of power to final emergency loads. (a) Large. A large battery installation is one connected to a...

46 CFR 120.354 - Battery installations.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Battery installations. 120.354 Section 120.354 Shipping... and Distribution Systems § 120.354 Battery installations. (a) Large batteries. Each large battery installation must be located in a locker, room or enclosed box solely dedicated to the storage of batteries...

46 CFR 120.352 - Battery categories.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Battery categories. 120.352 Section 120.352 Shipping... and Distribution Systems § 120.352 Battery categories. This section applies to batteries installed to... sources of power to final emergency loads. (a) Large. A large battery installation is one connected to a...

46 CFR 120.354 - Battery installations.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Battery installations. 120.354 Section 120.354 Shipping... and Distribution Systems § 120.354 Battery installations. (a) Large batteries. Each large battery installation must be located in a locker, room or enclosed box solely dedicated to the storage of batteries...

22 CFR 120.18 - Temporary import.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Temporary import. 120.18 Section 120.18 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.18 Temporary import. Temporary import means bringing into the United States from a foreign country any defense...

22 CFR 120.18 - Temporary import.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Temporary import. 120.18 Section 120.18 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.18 Temporary import. Temporary import means bringing into the United States from a foreign country any defense...

22 CFR 120.18 - Temporary import.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Temporary import. 120.18 Section 120.18 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.18 Temporary import. Temporary import means bringing into the United States from a foreign country any defense...

22 CFR 120.16 - Foreign person.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Foreign person. 120.16 Section 120.16 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.16 Foreign person. Foreign person means any natural person who is not a lawful permanent resident as defined...

22 CFR 120.16 - Foreign person.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Foreign person. 120.16 Section 120.16 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.16 Foreign person. Foreign person means any natural person who is not a lawful permanent resident as defined...

22 CFR 120.16 - Foreign person.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Foreign person. 120.16 Section 120.16 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.16 Foreign person. Foreign person means any natural person who is not a lawful permanent resident as defined...

22 CFR 120.18 - Temporary import.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Temporary import. 120.18 Section 120.18 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.18 Temporary import. Temporary import means bringing into the United States from a foreign country any defense...

22 CFR 120.16 - Foreign person.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Foreign person. 120.16 Section 120.16 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.16 Foreign person. Foreign person means any natural person who is not a lawful permanent resident as defined...

22 CFR 120.18 - Temporary import.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Temporary import. 120.18 Section 120.18 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.18 Temporary import. Temporary import means bringing into the United States from a foreign country any defense...

13 CFR 120.932 - Interest rate.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Interest rate. 120.932 Section 120.932 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company Loan Program (504) 504 Loans and Debentures § 120.932 Interest rate. The interest rate of the 504 Loan...

13 CFR 120.476 - Prohibited financing.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Prohibited financing. 120.476 Section 120.476 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Small Business Lending Companies (sblc) § 120.476 Prohibited financing. An SBLC may not make a loan to a small...

13 CFR 120.476 - Prohibited financing.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Prohibited financing. 120.476 Section 120.476 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Small Business Lending Companies (sblc) § 120.476 Prohibited financing. An SBLC may not make a loan to a small...

13 CFR 120.476 - Prohibited financing.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Prohibited financing. 120.476 Section 120.476 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Small Business Lending Companies (sblc) § 120.476 Prohibited financing. An SBLC may not make a loan to a small...

13 CFR 120.476 - Prohibited financing.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Prohibited financing. 120.476 Section 120.476 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Small Business Lending Companies (sblc) § 120.476 Prohibited financing. An SBLC may not make a loan to a small...

13 CFR 120.476 - Prohibited financing.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Prohibited financing. 120.476 Section 120.476 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Lenders Small Business Lending Companies (sblc) § 120.476 Prohibited financing. An SBLC may not make a loan to a small...

34 CFR 300.120 - Monitoring activities.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 34 Education 2 2011-07-01 2010-07-01 true Monitoring activities. 300.120 Section 300.120 Education... DISABILITIES State Eligibility Least Restrictive Environment (lre) § 300.120 Monitoring activities. (a) The SEA must carry out activities to ensure that § 300.114 is implemented by each public agency. (b) If there...

34 CFR 300.120 - Monitoring activities.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 34 Education 2 2014-07-01 2013-07-01 true Monitoring activities. 300.120 Section 300.120 Education... DISABILITIES State Eligibility Least Restrictive Environment (lre) § 300.120 Monitoring activities. (a) The SEA must carry out activities to ensure that § 300.114 is implemented by each public agency. (b) If there...

22 CFR 120.6 - Defense article.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Defense article. 120.6 Section 120.6 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.6 Defense article. Defense article means any item or technical data designated in § 121.1 of this subchapter...

22 CFR 120.6 - Defense article.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Defense article. 120.6 Section 120.6 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.6 Defense article. Defense article means any item or technical data designated in § 121.1 of this subchapter...

22 CFR 120.6 - Defense article.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Defense article. 120.6 Section 120.6 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.6 Defense article. Defense article means any item or technical data designated in § 121.1 of this subchapter...

22 CFR 120.6 - Defense article.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Defense article. 120.6 Section 120.6 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.6 Defense article. Defense article means any item or technical data designated in § 121.1 of this subchapter...

22 CFR 120.6 - Defense article.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Defense article. 120.6 Section 120.6 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.6 Defense article. Defense article means any item or technical data designated in § 121.1 of this subchapter...

14 CFR 120.31 - Prohibited drugs.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false Prohibited drugs. 120.31 Section 120.31... AND OPERATORS FOR COMPENSATION OR HIRE: CERTIFICATION AND OPERATIONS DRUG AND ALCOHOL TESTING PROGRAM... Under § 91.147 of This Chapter and Safety-Sensitive Employees § 120.31 Prohibited drugs. (a) Each...

14 CFR 120.31 - Prohibited drugs.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 3 2014-01-01 2014-01-01 false Prohibited drugs. 120.31 Section 120.31... AND OPERATORS FOR COMPENSATION OR HIRE: CERTIFICATION AND OPERATIONS DRUG AND ALCOHOL TESTING PROGRAM... Under § 91.147 of This Chapter and Safety-Sensitive Employees § 120.31 Prohibited drugs. (a) Each...

14 CFR 120.31 - Prohibited drugs.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 3 2011-01-01 2011-01-01 false Prohibited drugs. 120.31 Section 120.31... AND OPERATORS FOR COMPENSATION OR HIRE: CERTIFICATION AND OPERATIONS DRUG AND ALCOHOL TESTING PROGRAM... Under § 91.147 of This Chapter and Safety-Sensitive Employees § 120.31 Prohibited drugs. (a) Each...

14 CFR 120.31 - Prohibited drugs.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 3 2012-01-01 2012-01-01 false Prohibited drugs. 120.31 Section 120.31... AND OPERATORS FOR COMPENSATION OR HIRE: CERTIFICATION AND OPERATIONS DRUG AND ALCOHOL TESTING PROGRAM... Under § 91.147 of This Chapter and Safety-Sensitive Employees § 120.31 Prohibited drugs. (a) Each...

14 CFR 120.31 - Prohibited drugs.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 3 2013-01-01 2013-01-01 false Prohibited drugs. 120.31 Section 120.31... AND OPERATORS FOR COMPENSATION OR HIRE: CERTIFICATION AND OPERATIONS DRUG AND ALCOHOL TESTING PROGRAM... Under § 91.147 of This Chapter and Safety-Sensitive Employees § 120.31 Prohibited drugs. (a) Each...

21 CFR 120.9 - Legal basis.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Legal basis. 120.9 Section 120.9 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.9 Legal basis...

21 CFR 120.9 - Legal basis.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Legal basis. 120.9 Section 120.9 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.9 Legal basis...

21 CFR 120.9 - Legal basis.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Legal basis. 120.9 Section 120.9 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.9 Legal basis...

21 CFR 120.9 - Legal basis.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Legal basis. 120.9 Section 120.9 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.9 Legal basis...

21 CFR 120.9 - Legal basis.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Legal basis. 120.9 Section 120.9 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS General Provisions § 120.9 Legal basis...

22 CFR 120.24 - Port Directors.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Port Directors. 120.24 Section 120.24 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.24 Port Directors. Port Directors of U.S. Customs and Border Protection means the U.S. Customs and Border...

22 CFR 120.24 - Port Directors.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Port Directors. 120.24 Section 120.24 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.24 Port Directors. Port Directors of U.S. Customs and Border Protection means the U.S. Customs and Border...

22 CFR 120.24 - Port Directors.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Port Directors. 120.24 Section 120.24 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.24 Port Directors. Port Directors of U.S. Customs and Border Protection means the U.S. Customs and Border...

22 CFR 120.24 - Port Directors.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Port Directors. 120.24 Section 120.24 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.24 Port Directors. Port Directors of U.S. Customs and Border Protection means the U.S. Customs and Border...

22 CFR 120.24 - Port Directors.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Port Directors. 120.24 Section 120.24 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.24 Port Directors. Port Directors of U.S. Customs and Border Protection means the U.S. Customs and Border...

Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

NASA Astrophysics Data System (ADS)

Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

2018-02-01

Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

Optical properties of an indium doped CdSe nanocrystal: A density functional approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in; Mathew, Thomas

2016-05-06

We have studied the electronic and optical properties of a CdSe nanocrystal doped with n-type impurity atom. First principle calculations of the CdSe nanocrystal based on the density functional theory (DFT), as implemented in the Vienna Ab Initio Simulation Package (VASP) was used in the calculations. We have introduced a single Indium impurity atom into CdSe nanocrystal with 1.3 nm diameter. Nanocrystal surface dangling bonds are passivated with hydrogen atom. The band-structure, density of states and absorption spectra of the doped and undopted nanocrystals were discussed. Inclusion of the n-type impurity atom introduces an additional electron in conduction band, and significantlymore » alters the electronic and optical properties of undoped CdSe nanocrystal. Indium doped CdSe nannocrystal have potential applications in optoelectronic devices.« less

13 CFR 120.554 - Conflict of laws.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Conflict of laws. 120.554 Section 120.554 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Servicing... Conflict of laws. In the event of a conflict between the homestead provisions at §§ 120.550 through 120.553...

p120-catenin: past and present

PubMed Central

Reynolds, Albert B.

2010-01-01

p120-catenin was first described in 1989 as a Src substrate whose phosphorylation correlated with transformation. It was identified by cDNA cloning in 1992, and shown to interact with cadherins in 1994. Though enigmatic for some time, p120 has emerged as a master regulator of cadherin stability, and an important modulator of RhoGTPase activities. With the discovery of p120 family members and evidence for fundamental roles in cell biology and cancer, the field has expanded dramatically in recent years. As an introduction to this collection of reviews on p120 and its relatives, the editors have requested a personal commentary and historical perspective on the discovery of p120. The anecdotal parts have no particular purpose, but are mostly unpublished and perhaps of interest to some. PMID:17175391

46 CFR 132.120 - Fire pumps.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Fire pumps. 132.120 Section 132.120 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) OFFSHORE SUPPLY VESSELS FIRE-PROTECTION EQUIPMENT Fire Main § 132.120 Fire pumps. (a) Except as provided by § 132.100(b) of this subpart, each vessel must be equipped...

46 CFR 128.120 - Plan approval.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Plan approval. 128.120 Section 128.120 Shipping COAST... AND SYSTEMS General § 128.120 Plan approval. The plans required by subchapter F of this chapter need not be submitted if the plans required by § 127.110(d) of this subchapter have been. ...

30 CFR 62.120 - Action level.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Action level. 62.120 Section 62.120 Mineral... OCCUPATIONAL NOISE EXPOSURE § 62.120 Action level. If during any work shift a miner's noise exposure equals or exceeds the action level the mine operator must enroll the miner in a hearing conservation program that...

21 CFR 120.10 - Corrective actions.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 2 2010-04-01 2010-04-01 false Corrective actions. 120.10 Section 120.10 Food and... actions. Whenever a deviation from a critical limit occurs, a processor shall take corrective action by... develop written corrective action plans, which become part of their HACCP plans in accordance with § 120.8...

30 CFR 62.120 - Action level.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Action level. 62.120 Section 62.120 Mineral... OCCUPATIONAL NOISE EXPOSURE § 62.120 Action level. If during any work shift a miner's noise exposure equals or exceeds the action level the mine operator must enroll the miner in a hearing conservation program that...

21 CFR 120.24 - Process controls.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 2 2011-04-01 2011-04-01 false Process controls. 120.24 Section 120.24 Food and... CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.24 Process controls. (a) In order to meet the requirements of subpart A of this part, processors of juice products...

21 CFR 120.24 - Process controls.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 2 2014-04-01 2014-04-01 false Process controls. 120.24 Section 120.24 Food and... CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.24 Process controls. (a) In order to meet the requirements of subpart A of this part, processors of juice products...

21 CFR 120.24 - Process controls.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 2 2012-04-01 2012-04-01 false Process controls. 120.24 Section 120.24 Food and... CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.24 Process controls. (a) In order to meet the requirements of subpart A of this part, processors of juice products...

21 CFR 120.24 - Process controls.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 2 2013-04-01 2013-04-01 false Process controls. 120.24 Section 120.24 Food and... CONSUMPTION HAZARD ANALYSIS AND CRITICAL CONTROL POINT (HACCP) SYSTEMS Pathogen Reduction § 120.24 Process controls. (a) In order to meet the requirements of subpart A of this part, processors of juice products...

46 CFR 120.420 - Navigation lights.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Navigation lights. 120.420 Section 120.420 Shipping... Systems § 120.420 Navigation lights. All vessels must have navigation lights that are in compliance with... than 19.8 meters (65 feet) in length must also have navigation lights that meet UL 1104, “Marine...

46 CFR 120.430 - Portable lights.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Portable lights. 120.430 Section 120.430 Shipping COAST... Systems § 120.430 Portable lights. Each vessel must be equipped with at least two operable portable battery lights. One of these lights must be located at the operating station and the other at the access...

46 CFR 120.420 - Navigation lights.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Navigation lights. 120.420 Section 120.420 Shipping... Systems § 120.420 Navigation lights. All vessels must have navigation lights that are in compliance with... than 19.8 meters (65 feet) in length must also have navigation lights that meet UL 1104, “Marine...

46 CFR 120.430 - Portable lights.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Portable lights. 120.430 Section 120.430 Shipping COAST... Systems § 120.430 Portable lights. Each vessel must be equipped with at least two operable portable battery lights. One of these lights must be located at the operating station and the other at the access...

46 CFR 120.420 - Navigation lights.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Navigation lights. 120.420 Section 120.420 Shipping... Systems § 120.420 Navigation lights. All vessels must have navigation lights that are in compliance with... than 19.8 meters (65 feet) in length must also have navigation lights that meet UL 1104, “Marine...

46 CFR 120.420 - Navigation lights.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Navigation lights. 120.420 Section 120.420 Shipping... Systems § 120.420 Navigation lights. All vessels must have navigation lights that are in compliance with... than 19.8 meters (65 feet) in length must also have navigation lights that meet UL 1104, “Marine...

46 CFR 120.430 - Portable lights.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Portable lights. 120.430 Section 120.430 Shipping COAST... Systems § 120.430 Portable lights. Each vessel must be equipped with at least two operable portable battery lights. One of these lights must be located at the operating station and the other at the access...

46 CFR 120.420 - Navigation lights.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Navigation lights. 120.420 Section 120.420 Shipping... Systems § 120.420 Navigation lights. All vessels must have navigation lights that are in compliance with... than 19.8 meters (65 feet) in length must also have navigation lights that meet UL 1104, “Marine...

46 CFR 120.430 - Portable lights.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Portable lights. 120.430 Section 120.430 Shipping COAST... Systems § 120.430 Portable lights. Each vessel must be equipped with at least two operable portable battery lights. One of these lights must be located at the operating station and the other at the access...

46 CFR 120.430 - Portable lights.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Portable lights. 120.430 Section 120.430 Shipping COAST... Systems § 120.430 Portable lights. Each vessel must be equipped with at least two operable portable battery lights. One of these lights must be located at the operating station and the other at the access...

Indium-bearing sulfides from the Hämmerlein skarn deposit, Erzgebirge, Germany: evidence for late-stage diffusion of indium into sphalerite

NASA Astrophysics Data System (ADS)

Bauer, Matthias E.; Seifert, Thomas; Burisch, Mathias; Krause, Joachim; Richter, Nancy; Gutzmer, Jens

2017-12-01

At the Hämmerlein skarn deposit, located in the western Erzgebirge (Germany), a major cassiterite-dominated Sn mineralization stage is spatially associated with a younger Zn-Cu-In sulfide mineralization stage. In this contribution, we provide the first detailed description of the Zn-Cu-In sulfide mineralization stage, based on field geological observations combined with detailed petrographic studies and electron probe microanalysis data. Indium-rich sulfide mineralization occurs as irregular, semi-massive lenses or as infill of short, discontinuous veinlets that crosscut the cassiterite-bearing skarn assemblage. Indium- and Cu-rich sphalerite and roquesite are found to be closely associated with In-bearing chalcopyrite. The highest In concentrations in sphalerite occur at the rims and along cracks of sphalerite grains. The distribution resembles diffusion profiles, suggesting that the In enrichment is due to an hydrothermal overprint that postdates the initial formation of both sphalerite and chalcopyrite. Textural relations illustrate that the diffusion fronts in sphalerite grains are thicker where they are in contact to anhedral masses of hematite and magnetite. Our observations suggest that In enrichment in sphalerite at the Hämmerlein skarn deposit is due to the decomposition of In-bearing chalcopyrite. The resultant release of Fe led to the formation of hematite and magnetite, whereas Cu and In were incorporated into sphalerite along grain boundaries and micro fractures. Incorporation into the sphalerite lattice took place by coupled substitution of Cu+ + In3+ ↔ 2Zn2+, suggesting that the concurrent availability of Cu and In may be an essential factor to enrich In in sphalerite in hydrothermal ore-forming environments.

Negative Magnetoresistance in Amorphous Indium Oxide Wires

PubMed Central

Mitra, Sreemanta; Tewari, Girish C; Mahalu, Diana; Shahar, Dan

2016-01-01

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions. PMID:27876859

22 CFR 120.15 - U.S. person.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false U.S. person. 120.15 Section 120.15 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.15 U.S. person. U.S. person means a person (as defined in § 120.14 of this part) who is a lawful permanent...

22 CFR 120.15 - U.S. person.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false U.S. person. 120.15 Section 120.15 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.15 U.S. person. U.S. person means a person (as defined in § 120.14 of this part) who is a lawful permanent...

22 CFR 120.15 - U.S. person.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false U.S. person. 120.15 Section 120.15 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.15 U.S. person. U.S. person means a person (as defined in § 120.14 of this part) who is a lawful permanent...

22 CFR 120.15 - U.S. person.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false U.S. person. 120.15 Section 120.15 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL TRAFFIC IN ARMS REGULATIONS PURPOSE AND DEFINITIONS § 120.15 U.S. person. U.S. person means a person (as defined in § 120.14 of this part) who is a lawful permanent...

14 CFR § 1264.120 - Discovery.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 5 2014-01-01 2014-01-01 false Discovery. § 1264.120 Section § 1264.120... PENALTIES ACT OF 1986 § 1264.120 Discovery. (a) The following types of discovery are authorized: (1..., discovery is available only as ordered by the presiding officer. The presiding officer shall regulate the...

32 CFR 643.120 - Post offices.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 4 2010-07-01 2010-07-01 true Post offices. 643.120 Section 643.120 National... Additional Authority of Commanders § 643.120 Post offices. Title 10 U.S.C. 4779b, provides that the SA shall assign suitable space for post office purposes at military posts where post offices have been established...

Liquid precursor for deposition of indium selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-22

Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

Heat transfer at a sapphire - indium interface in the 30 mK - 300 mK temperature range

NASA Astrophysics Data System (ADS)

Liberadzka, J.; Koettig, T.; Bremer, J.; van der Post, C. C. W.; ter Brake, H. J. M.

2017-02-01

Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth’s gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper - indium - sapphire - indium - copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.

Growth kinetics of indium metal atoms on Si(1 1 2) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raj, Vidur; Chauhan, Amit Kumar Singh; Gupta, Govind, E-mail: govind@nplindia.org

Graphical abstract: Controlled growth of indium atoms on Si(1 1 2) surface has been carried out systematically and the influence of substrate temperature on the kinetics is analysed under various growth conditions. Temperature induced anomalous layer-to-clusters transformation during thermal desorption has also been reported. - Highlights: • Controlled growth of indium atoms on Si(1 1 2) surface & their thermal stability. • Influence of substrate temperature on the kinetics under various growth conditions. • Temperature induced layer-to-clusters transformation during thermal desorption. - Abstract: The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(1 1 2)more » surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) ∼250 °C follows Frank–van der Merve growth mode whereas at temperatures ≥450 °C, In growth evolves through Volmer–Weber growth mode. Thermal desorption studies of RT and 250 °C grown In/Si(1 1 2) systems show temperature induced rearrangement of In atoms over Si(1 1 2) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(1 1 2) system are calculated to be 2.5 eV and 1.52 eV, while for HT-250 °C the values are found to be 1.6 eV and 1.3 eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(1 1 2) surface.« less

13 CFR 120.354 - Creditworthiness.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 120.354 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.354 Creditworthiness. In determining repayment ability, SBA... earnings history and projected future earnings of the employer small business. SBA may consider the...

13 CFR 120.354 - Creditworthiness.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 120.354 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.354 Creditworthiness. In determining repayment ability, SBA... earnings history and projected future earnings of the employer small business. SBA may consider the...

13 CFR 120.354 - Creditworthiness.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 120.354 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.354 Creditworthiness. In determining repayment ability, SBA... earnings history and projected future earnings of the employer small business. SBA may consider the...

13 CFR 120.354 - Creditworthiness.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 120.354 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified Employee Trusts (esop) § 120.354 Creditworthiness. In determining repayment ability, SBA... earnings history and projected future earnings of the employer small business. SBA may consider the...

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

2014-04-01

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

DOEpatents

Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

1999-02-16

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

DX centers in indium aluminum arsenide heterostructures

NASA Astrophysics Data System (ADS)

Sari, Huseyin

DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

The role of water in the synthesis of indium nanoparticles.

PubMed

Dreyfuss, Sébastien; Pradel, Christian; Vendier, Laure; Mallet-Ladeira, Sonia; Mézailles, Nicolas

2016-12-06

We report the water-assisted synthesis of indium nanoparticles (In NPs). We found that a precise amount of water was necessary to allow the formation of the desired 7 nm In NPs: the oxidation of the In surface by water inhibits the growth of NPs as well as subsequent reactivity with white phosphorus (P 4 ). A novel surface activation method based on the use of organosilanes is presented.

Humidity-induced room-temperature decomposition of Au contacted indium phosphide

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Weizer, Victor G.

1990-01-01

It has been found that Au-contacted InP is chemically unstable at room temperature in a humid ambient due to the leaching action of indium nitrate islands that continually remove In from the contact metallization and thus, in effect, from the Inp substrate. While similar appearing islands form on Au-contacted GaAs, that system appears to be stable since leaching of the group III element does not take place.

13 CFR 120.381 - Eligibility.

Code of Federal Regulations, 2010 CFR

2010-01-01

... assistance (DELTA). The DELTA program provides financial and technical assistance to defense dependent small... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Eligibility. 120.381 Section 120.381 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans...

14 CFR 120.103 - General.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 3 2010-01-01 2010-01-01 false General. 120.103 Section 120.103 Aeronautics and Space FEDERAL AVIATION ADMINISTRATION, DEPARTMENT OF TRANSPORTATION (CONTINUED) AIR CARRIERS AND OPERATORS FOR COMPENSATION OR HIRE: CERTIFICATION AND OPERATIONS DRUG AND ALCOHOL TESTING PROGRAM...

13 CFR 120.354 - Creditworthiness.

Code of Federal Regulations, 2010 CFR

2010-01-01

... earnings history and projected future earnings of the employer small business. SBA may consider the... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Creditworthiness. 120.354 Section 120.354 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose...

7 CFR 959.120 - Policy.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 8 2010-01-01 2010-01-01 false Policy. 959.120 Section 959.120 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing Agreements... of any such onions in trade channels other than those for which intended. Such information and...

13 CFR 120.701 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Definitions. 120.701 Section 120.701 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Microloan Program... participating in the Microloan Program which makes and services Microloans to eligible small businesses and...

13 CFR 120.701 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Definitions. 120.701 Section 120.701 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Microloan Program... participating in the Microloan Program which makes and services Microloans to eligible small businesses and...

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Transparent electrodes for high E-field production using a buried indium tin oxide layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gunton, Will; Polovy, Gene; Semczuk, Mariusz

2016-03-15

We present a design and characterization of optically transparent electrodes suitable for atomic and molecular physics experiments where high optical access is required. The electrodes can be operated in air at standard atmospheric pressure and do not suffer electrical breakdown even for electric fields far exceeding the dielectric breakdown of air. This is achieved by putting an indium tin oxide coated dielectric substrate inside a stack of dielectric substrates, which prevents ion avalanche resulting from Townsend discharge. With this design, we observe no arcing for fields of up to 120 kV/cm. Using these plates, we directly verify the production ofmore » electric fields up to 18 kV/cm inside a quartz vacuum cell by a spectroscopic measurement of the dc Stark shift of the 5{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2} transition for a cloud of laser cooled rubidium atoms. We also report on the shielding of the electric field and on the residual electric fields that persist within the vacuum cell once the electrodes are discharged. In addition, we discuss observed atom loss that results from the motion of free charges within the vacuum. The observed asymmetry of these phenomena on the bias of the electrodes suggests that field emission of electrons within the vacuum is primarily responsible for these effects and may indicate a way of mitigating them.« less

Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

NASA Astrophysics Data System (ADS)

León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

2018-05-01

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

27 CFR 479.120 - Refunds.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2013-04-01 2013-04-01 false Refunds. 479.120 Section 479.120 Alcohol, Tobacco Products, and Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS...

27 CFR 479.120 - Refunds.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2014-04-01 2014-04-01 false Refunds. 479.120 Section 479.120 Alcohol, Tobacco Products, and Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS...

27 CFR 479.120 - Refunds.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2012-04-01 2010-04-01 true Refunds. 479.120 Section 479.120 Alcohol, Tobacco Products, and Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS...

27 CFR 479.120 - Refunds.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2010-04-01 2010-04-01 false Refunds. 479.120 Section 479.120 Alcohol, Tobacco Products, and Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS...

27 CFR 479.120 - Refunds.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 3 2011-04-01 2010-04-01 true Refunds. 479.120 Section 479.120 Alcohol, Tobacco Products, and Firearms BUREAU OF ALCOHOL, TOBACCO, FIREARMS, AND EXPLOSIVES, DEPARTMENT OF JUSTICE FIREARMS AND AMMUNITION MACHINE GUNS, DESTRUCTIVE DEVICES, AND CERTAIN OTHER FIREARMS...

33 CFR 101.120 - Alternatives.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Alternatives. 101.120 Section 101... MARITIME SECURITY: GENERAL General § 101.120 Alternatives. (a) Alternative Security Agreements. (1) The U.S... Alternative Security Arrangements covering short international voyages on fixed routes between facilities...

7 CFR 946.120 - Application.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 8 2010-01-01 2010-01-01 false Application. 946.120 Section 946.120 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing Agreements... safeguarding against entry of such potatoes into trade channels other than those for which the special purpose...

7 CFR 945.120 - General.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 8 2010-01-01 2010-01-01 false General. 945.120 Section 945.120 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing Agreements... entry of any such potatoes into trade channels other than those for which intended. Such information and...

7 CFR 948.120 - General.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 7 Agriculture 8 2010-01-01 2010-01-01 false General. 948.120 Section 948.120 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Marketing Agreements... shipments as safeguards against the entry of any such potatoes into trade channels other than those for...

13 CFR 120.701 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... businesses and which provides marketing, management, and technical assistance to its borrowers. It may be: (1... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Definitions. 120.701 Section 120.701 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Microloan Program...

13 CFR 120.600 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Definitions. 120.600 Section 120.600 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Secondary Market... listed in FTA's records. (k) SBA's Secondary Market Program Guide is an issuance from SBA which describes...

13 CFR 120.934 - Collateral.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Collateral. 120.934 Section 120.934 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Development Company... must be insured against such hazards and risks as SBA may require, with provisions for notice to SBA...

13 CFR 120.350 - Policy.

Code of Federal Regulations, 2013 CFR

2013-01-01

... a qualified employee trust (“ESOP”) to: (a) Help finance the growth of its employer's small business... 13 Business Credit and Assistance 1 2013-01-01 2013-01-01 false Policy. 120.350 Section 120.350 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified...

13 CFR 120.350 - Policy.

Code of Federal Regulations, 2011 CFR

2011-01-01

... a qualified employee trust (“ESOP”) to: (a) Help finance the growth of its employer's small business... 13 Business Credit and Assistance 1 2011-01-01 2011-01-01 false Policy. 120.350 Section 120.350 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified...

13 CFR 120.350 - Policy.

Code of Federal Regulations, 2014 CFR

2014-01-01

... a qualified employee trust (“ESOP”) to: (a) Help finance the growth of its employer's small business... 13 Business Credit and Assistance 1 2014-01-01 2014-01-01 false Policy. 120.350 Section 120.350 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified...

13 CFR 120.350 - Policy.

Code of Federal Regulations, 2012 CFR

2012-01-01

... a qualified employee trust (“ESOP”) to: (a) Help finance the growth of its employer's small business... 13 Business Credit and Assistance 1 2012-01-01 2012-01-01 false Policy. 120.350 Section 120.350 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans Qualified...

37 CFR 2.120 - Discovery.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 37 Patents, Trademarks, and Copyrights 1 2013-07-01 2013-07-01 false Discovery. 2.120 Section 2... COMMERCE RULES OF PRACTICE IN TRADEMARK CASES Procedure in Inter Partes Proceedings § 2.120 Discovery. (a... to disclosure and discovery shall apply in opposition, cancellation, interference and concurrent use...

37 CFR 2.120 - Discovery.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 37 Patents, Trademarks, and Copyrights 1 2011-07-01 2011-07-01 false Discovery. 2.120 Section 2... COMMERCE RULES OF PRACTICE IN TRADEMARK CASES Procedure in Inter Partes Proceedings § 2.120 Discovery. (a... to disclosure and discovery shall apply in opposition, cancellation, interference and concurrent use...

37 CFR 2.120 - Discovery.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 37 Patents, Trademarks, and Copyrights 1 2014-07-01 2014-07-01 false Discovery. 2.120 Section 2... COMMERCE RULES OF PRACTICE IN TRADEMARK CASES Procedure in Inter Partes Proceedings § 2.120 Discovery. (a... to disclosure and discovery shall apply in opposition, cancellation, interference and concurrent use...

37 CFR 2.120 - Discovery.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 37 Patents, Trademarks, and Copyrights 1 2012-07-01 2012-07-01 false Discovery. 2.120 Section 2... COMMERCE RULES OF PRACTICE IN TRADEMARK CASES Procedure in Inter Partes Proceedings § 2.120 Discovery. (a... to disclosure and discovery shall apply in opposition, cancellation, interference and concurrent use...

13 CFR 120.311 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 13 Business Credit and Assistance 1 2010-01-01 2010-01-01 false Definitions. 120.311 Section 120.311 Business Credit and Assistance SMALL BUSINESS ADMINISTRATION BUSINESS LOANS Special Purpose Loans... which: (1) Is organized under federal or state law to operate in the interest of disabled individuals...

45 CFR 96.120 - Scope.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Block Grant administered by the Substance Abuse and Mental Health Services Administration. 45 C.F.R... 45 Public Welfare 1 2010-10-01 2010-10-01 false Scope. 96.120 Section 96.120 Public Welfare DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL ADMINISTRATION BLOCK GRANTS Substance Abuse Prevention and...

45 CFR 96.120 - Scope.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Block Grant administered by the Substance Abuse and Mental Health Services Administration. 45 CFR part... 45 Public Welfare 1 2014-10-01 2014-10-01 false Scope. 96.120 Section 96.120 Public Welfare Department of Health and Human Services GENERAL ADMINISTRATION BLOCK GRANTS Substance Abuse Prevention and...