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Sample records for indium borides

  1. In{sub 3}Ir{sub 3}B, In{sub 3}Rh{sub 3}B and In{sub 5}Ir{sub 9}B{sub 4}, the first indium platinum metal borides

    SciTech Connect

    Kluenter, Wilhelm; Jung, Walter . E-mail: walter.jung@uni-koeln.de

    2006-09-15

    The first indium platinum metal borides have been synthesized and structurally characterized by single crystal X-ray diffraction data. In{sub 3}Ir{sub 3}B and In{sub 3}Rh{sub 3}B are isotypic. They crystallize with the hexagonal space group P6-bar 2m and Z=1. The lattice constants are a=685.78(1)pm, c=287.30(1)pm for In{sub 3}Ir{sub 3}B and a=678.47(3)pm, c=288.61(6)pm for In{sub 3}Rh{sub 3}B. The structure which is derived from the Fe{sub 2}P type is characterized by columns of boron centered triangular platinum metal prisms inserted in a three-dimensional indium matrix. The indium atoms are on split positions. In{sub 5}Ir{sub 9}B{sub 4} (hexagonal, space group P6-bar 2m, a=559.0(2)pm, c=1032.6(3)pm, Z=1) crystallizes with a structure derived from the CeCo{sub 3}B{sub 2} type. The structure can be interpreted as a layer as well as a channel structure. In part the indium atoms are arranged at the vertices of a honeycomb net (Schlaefli symbol 6{sup 3}) separating slabs consisting of double layers of triangular Ir{sub 6}B prisms, and in part they form a linear chain in a hexagonal channel formed by iridium prisms and indium atoms of the honeycomb lattice.

  2. Gradient boride layers formed by diffusion carburizing and laser boriding

    NASA Astrophysics Data System (ADS)

    Kulka, M.; Makuch, N.; Dziarski, P.; Mikołajczak, D.; Przestacki, D.

    2015-04-01

    Laser boriding, instead of diffusion boriding, was proposed to formation of gradient borocarburized layers. The microstructure and properties of these layers were compared to those-obtained after typical diffusion borocarburizing. First method of treatment consists in diffusion carburizing and laser boriding only. In microstructure three zones are present: laser borided zone, hardened carburized zone and carburized layer without heat treatment. However, the violent decrease in the microhardness was observed below the laser borided zone. Additionally, these layers were characterized by a changeable value of mass wear intensity factor thus by a changeable abrasive wear resistance. Although at the beginning of friction the very low values of mass wear intensity factor Imw were obtained, these values increased during the next stages of friction. It can be caused by the fluctuations in the microhardness of the hardened carburized zone (HAZ). The use of through hardening after carburizing and laser boriding eliminated these fluctuations. Two zones characterized the microstructure of this layer: laser borided zone and hardened carburized zone. Mass wear intensity factor obtained a constant value for this layer and was comparable to that-obtained in case of diffusion borocarburizing and through hardening. Therefore, the diffusion boriding could be replaced by the laser boriding, when the high abrasive wear resistance is required. However, the possibilities of application of laser boriding instead of diffusion process were limited. In case of elements, which needed high fatigue strength, the substitution of diffusion boriding by laser boriding was not advisable. The surface cracks formed during laser re-melting were the reason for relatively quickly first fatigue crack. The preheating of the laser treated surface before laser beam action would prevent the surface cracks and cause the improved fatigue strength. Although the cohesion of laser borided carburized layer was

  3. Kinetics of electrochemical boriding of low carbon steel

    NASA Astrophysics Data System (ADS)

    Kartal, G.; Eryilmaz, O. L.; Krumdick, G.; Erdemir, A.; Timur, S.

    2011-05-01

    In this study, the growth kinetics of the boride layers forming on low carbon steel substrates was investigated during electrochemical boriding which was performed at a constant current density of 200 mA/cm 2 in a borax based electrolyte at temperatures ranging from 1123 K to 1273 K for periods of 5-120 min. After boriding, the presence of both FeB and Fe 2B phases were confirmed by the X-ray diffraction method. Cross-sectional microscopy revealed a very dense and thick morphology for both boride phases. Micro hardness testing of the borided steel samples showed a significant increase in the hardness of the borided surfaces (i.e., up to (1700 ± 200) HV), while the hardness of un-borided steel samples was approximately (200 ± 20) HV. Systematic studies over a wide range of boriding time and temperature confirmed that the rate of the boride layer formation is strongly dependent on boriding duration and has a parabolic character. The activation energy of boride layer growth for electrochemical boriding was determined as (172.75 ± 8.6) kJ/mol.

  4. Beta cell device using icosahedral boride compounds

    DOEpatents

    Aselage, Terrence L.; Emin, David

    2002-01-01

    A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B.sub.12 As.sub.2, B.sub.12 P.sub.2, elemental boron having an .alpha.-rhombohedral structure, elemental boron having a .beta.-rhombohedral structure, and boron carbides of the chemical formula B.sub.12-x C.sub.3-x, where 0.15boride compound self-heals, resisting degradation from radiation damage.

  5. The fracture toughness of borides formed on boronized cold work tool steels

    SciTech Connect

    Sen, Ugur; Sen, Saduman

    2003-06-15

    In this study, the fracture toughness of boride layers of two borided cold work tool steels have been investigated. Boriding was carried out in a salt bath consisting of borax, boric acid, ferro-silicon and aluminum. Boriding was performed at 850 and 950 deg. C for 2 to 7 h. The presence of boride phases were determined by X-ray diffraction (XRD) analysis. Hardness and fracture toughness of borides were measured via Vickers indenter. Increasing of boriding time and temperature leads to reduction of fracture toughness of borides. Metallographic examination showed that boride layer formed on cold work tool steels was compact and smooth.

  6. Fracture Microindentation on boride layers on AISI 1020 steel

    NASA Astrophysics Data System (ADS)

    Prince, M.; Thanu, A. Justin; Arjun, S. L.; Velmurugan, U.; Gopalakrishnan, P.

    2016-02-01

    In this paper, an attempt has been made to enhance the fracture toughness (Kc) of boride layer using multi-component (Ni, Cr and B) laser bonding. The fracture toughness of continuously pack borided, interrupted pack borided and multi-component (Ni, Cr and B) laser borided steel specimens was measured using Vickers microindentation fracture toughness test as per ASTM E384 standard. The fracture toughness of continuously pack borided layer was - 3.3 MPa.m1/2. The fracture toughness of interrupted boride layer was in the range of - 4.9 MPa.m1/2. The fracture toughness of multi-component (Ni, Cr and B) laser borided layer was in the range of 13.8 - 18.3 MPa.m1/2. A significant improvement in fracture toughness of laser treated specimens was observed from the experimental results. This may be due to better distribution of boron, nickel, chromium and other alloying elements due to laser treatment and relatively more uniform boride layer as compared with continuously pack borided layer and interrupted pack borided layer.

  7. Investigation of the fracture mechanics of boride composites

    NASA Technical Reports Server (NTRS)

    Kaufman, L.; Clougherty, E. V.; Nesor, H.

    1971-01-01

    Fracture energies of WC-6Co, Boride 5 (ZrB2+SiC), Boride 8(ZrB2+SiC+C) and Boride 8-M2(ZrB2+SiC+C) were measured by slow bend and impact tests of notched charpy bars. Cobalt bonded tungsten carbide exhibited impact energies of 0.76 ft-lb or 73.9 in-lb/square inch. Boride 5 and the Boride 8 exhibit impact energies one third and one quarter of that observed for WC-6Co comparing favorably with measurements for SiC and Si3N4. Slow bend-notched bar-fracture energies for WC-6Co were near 2.6 in-lb/square inch or 1/20 the impact energies. Slow bend energies for Boride 8-M2, Boride 8 and Boride 5 were 58%, 42% and 25% of the value observed for WC-6Co. Fractograph showed differences for WC-6Co where slow bend testing resulted in smooth transgranular cleavage while samples broken by impact exhibited intergranular failures. By contrast the boride fractures showed no distinction based on testing method. Fabrication studies were conducted to effect alteration of the boride composites by alloying and introduction of graphite cloth.

  8. Electrochemical Evaluation of Corrosion on Borided and Non-borided Steels Immersed in 1 M HCl Solution

    NASA Astrophysics Data System (ADS)

    Mejía-Caballero, I.; Martínez-Trinidad, J.; Palomar-Pardavé, M.; Romero-Romo, M.; Herrera-Hernández, H.; Herrera-Soria, O.; Campos Silva, I.

    2014-08-01

    In this study the corrosion resistances of AISI 1018 and AISI 304 borided and non-borided steels were estimated using polarization resistance and electrochemical impedance spectroscopy (EIS) techniques. Boriding of the steel samples was conducted using the powder-pack method at 1223 K with 6 h of exposure. Structural examinations of the surfaces of the borided steels showed the presence of a Fe2B layer with isolated FeB teeth on the AISI 1018 steel, whereas a compact layer of FeB/Fe2B was formed on the AISI 304 steel. Polarization resistance and EIS of the borided and non-borided steels surfaces were performed in a corrosive solution of 1 M HCl. The EIS data were analyzed during 43 days of exposure to the acid solution. Impedance curves obtained during this period for the borided and non-borided steels were modeled using equivalent electrical circuits. The results of both electrochemical techniques indicated that boride layers formed at the steel surfaces effectively protect the samples from the corrosive effects of HCl. The main corrosion processes observed on the boride layers were pitting and crevice corrosion.

  9. Colloidal nickel boride catalyst for hydrogenation of olefins

    SciTech Connect

    Nakao, Y.; Fujishige, S.

    1981-04-01

    Colloidal nickel boride was prepared from nickel(II) chloride by reduction with sodium borohydride in the presence of polyvinylpyrrolidone in ethanol. Hydrogenation of various olefins was examined over the colloidal catalyst at 30/sup 0/C and atmospheric pressure. The colloidal nickel boride was much more effective than the precipitated nickel boride prepared in the absence of polyvinylpyrrolidone as a hydrogenation catalyst, especially for isopropenyl compounds. Additional amines and sodium acetate were slightly inhibitive to the colloidal catalyst, while, being strongly promotive to the precipitated catalyst. The colloidal nickel boride was superior to the charcoal-supported metals of the platinum group in catalytic activity for ..cap alpha..-methylstyrene.

  10. Mechanism of boriding from pastes in a glow discharge

    SciTech Connect

    Isakov, S.A.; Al'tshuler, S.A.

    1987-09-01

    The authors investigate the boridation of steel 45 from the standpoint of the glow-discharge dissociation of a borax paste and the plasma arc spraying of the resulting boron into the steel. The effects of process parameters on the impregnation of boron into the steel and its phase behavior in the boridation process are discussed.

  11. Boriding of high carbon high chromium cold work tool steel

    NASA Astrophysics Data System (ADS)

    Muhammad, W.

    2014-06-01

    High-carbon high-chromium cold work tool steels are widely used for blanking and cold forming of punches and dies. It is always advantageous to obtain an increased wear resistant surface to improve life and performance of these steels. In this connection boriding of a high-carbon high-chromium cold work die steel, D3, was conducted in a mixture of 30% B4C, 70% borax at 950 °C for two, four and six hours. Case depth of the borided layer obtained was between 40 to 80 μm. After boriding, the surface hardness achieved was between 1430 to 1544 HV depending upon the process time. X-ray diffraction studies confirmed the formation of a duplex compound layer consisting of FeB and Fe2B. It is generally considered that FeB is undesirable because of its inherent brittleness. Post boriding treatment (homogenization) transformed the compound layer into single-phase layer of Fe2B, while surface hardness decreased to 1345-1430 HV. Pin-on-disc wer test showed that wear resistance of the borided samples was superior as compared to non-borided material and increased with boriding time.

  12. Synthesis and properties of nanoscale titanium boride

    NASA Astrophysics Data System (ADS)

    Efimova, K. A.; Galevskiy, G. V.; Rudneva, V. V.

    2015-09-01

    This work reports the scientific and technological grounds for plasma synthesis of titanium diboride, including thermodynamic and kinetic conditions of boride formation when titanium and titanium dioxide are interacting with products resulting from boron gasification in the nitrogen - hydrogen plasma flow, and two variations of its behavior using the powder mixtures: titanium - boron and titanium dioxide - boron. To study these technology variations, the mathematical models were derived, describing the relation between element contents in the synthesized products of titanium and free boron and basic parameters. The probable mechanism proposed for forming titanium diboride according to a "vapour - melt - crystal" pattern was examined, covering condensation of titanium vapour in the form of aerosol, boriding of nanoscale melt droplets by boron hydrides and crystallization of titanium - boron melt. The comprehensive physical - chemical certification of titanium diboride was carried out, including the study of its crystal structure, phase and chemical composition, dispersion, morphology and particle oxidation. Technological application prospects for use of titanium diboride nanoscale powder as constituent element in the wettable coating for carbon cathodes having excellent physical and mechanical performance and protective properties.

  13. Method of making an icosahedral boride structure

    DOEpatents

    Hersee, Stephen D.; Wang, Ronghua; Zubia, David; Aselage, Terrance L.; Emin, David

    2005-01-11

    A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

  14. Plasma metallurgical production of nanocrystalline borides and carbides

    NASA Astrophysics Data System (ADS)

    Galevsky, G. V.; Rudneva, V. V.; Cherepanov, A. N.; Galevsky, S. G.; Efimova, K. A.

    2016-09-01

    he experience in production and study of properties of nanocrystalline borides and chromium carbides, titanium, silicon was summarized. The design and features of the vertical three-jet once-through reactor with power 150 kW, used in the plasma metallurgical production, was described. The technological, thermotechnical and resource characteristics of the reactor were identified. The parameters of borides and carbides synthesis, their main characteristics in the nanodispersed state and equipment-technological scheme of production were provided. Evaluation of engineering-and-economical performance of the laboratory and industrial levels of borides and carbides production and the state corresponding to the segment of the world market was carried out.

  15. Pack-boriding of Fe-Mn binary alloys: Characterization and kinetics of the boride layers

    SciTech Connect

    Bektes, M.; Calik, A.; Ucar, N.; Keddam, M.

    2010-02-15

    In this work, the boronizing of Fe-Mn binary alloys at 0.42, 0.76 and 0.94 wt.% Mn was carried out in a solid medium using the powder pack method. In this method, commercial Ekabor-II boron source and activator (ferro-silicon) were thoroughly mixed to form the boriding medium. The samples were boronized in an electrical resistance furnace for exposure times of 2, 4, 6 and 8 h at 1173 K under atmospheric pressure and a series of boronized samples in the temperature range 1073-1373 K for 3 h. After the furnace process, boronized samples were removed from the furnace and cooled in air. Afterwards, the boride layers generated by the pack-boronizing process were characterized by optical microscopy, scanning electron microscopy, XRD analysis, Vickers microhardness and tensile testing. The generated boride layers, showing a saw-tooth morphology, had a surface microhardness in the range 1400-1270 HV0.1. It was shown that the values of yield stresses and ultimate tensile stresses were increased as the Mn content increases in the boronized Fe-Mn binary alloys. In contrast, the values of elongations determined from the stress-strain curves were decreased. Furthermore, it was found that the calculated mean value of the activation energy of boron diffusion was close to 119 J/mol.

  16. NMR studies of borates and borides

    NASA Astrophysics Data System (ADS)

    Bray, P. J.

    1986-04-01

    Nuclear magnetic resonance (NMR) has been employed for some 25 years to study the structure of boron-containing compounds.1-3 The earliest works employed the 11B nuclear isotope in a study of glasses containing boron oxide. Many additional NMR studies3-10 of boron-containing glasses have utilized both the 11B and 10B isotopes. Crystalline materials were also studied2,3 at an early date, with particular attention given to borides and boron carbide. After a discussion of the features of NMR spectroscopy particularly pertinent for the study of boron-containing compounds, highlights of the early work and more recent studies will be summarized to indicate the usefulness of 10B and 11B NMR for structural studies.

  17. Certain physical properties of cobalt and nickel borides

    NASA Technical Reports Server (NTRS)

    Kostetskiy, I. I.; Lvov, S. N.

    1981-01-01

    The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

  18. Corrosion behavior of boride layers evaluated by the EIS technique

    NASA Astrophysics Data System (ADS)

    Campos, I.; Palomar-Pardavé, M.; Amador, A.; VillaVelázquez, C.; Hadad, J.

    2007-09-01

    The corrosion behavior of boride layers at the AISI 304 steel surface is evaluated in the present study. Electrochemical impedance spectroscopy (EIS) technique was used for the evaluation of the polarization resistance at the steel surface, with the aid of AUTOLAB potentiostat. Samples were treated with boron paste thickness of 4 and 5 mm, in the range of temperatures 1123 ≤ T ≤ 1273 K and exposed time of 4 and 6 h. The electrochemical technique employed 10 mV AC with a frequency scan range from 8 kHz to 3 mHz in deaerated 0.1 M NaCl solution. Nyquist diagrams show that the highest values of corrosion resistance are present in the samples borided at the temperature of 1273 K, with treatment time of 4 h and 4 mm of boron paste thickness. The values of corrosion resistance on borided steels are compared with the porosity exhibited in the layers.

  19. The characterization of boride layer on the St37 iron

    NASA Astrophysics Data System (ADS)

    Sutrisno, Soegijono, Bambang

    2012-06-01

    The property such as microhardness of boride layer formed on St37 iron was investigated. Boronizing was carried out in a solid medium consisting of nano size powders of 50% B4C as a donor, 45% SiC as a diluent, and 5% KBF4 as an activator treated at the temperature of 1000°C for 8 hours. The phases that were formed on the substrate was found as Fe2B and FeB layer that had smooth and flate shape morphology. The hardness of boride layer on St37 was over 2000 HV, while the hardness of untreated St37 iron was about 123,82 HV. Depending on process time and temperature, the depth of boride layer ranges from 20 to 60 μm, leading to a diffusion controlled process.

  20. Subminiature eddy current transducers for studying boride coatings

    NASA Astrophysics Data System (ADS)

    Dmitriev, S. F.; Ishkov, A. V.; Malikov, V. N.; Sagalakov, A. M.

    2016-07-01

    Strengthening of parts and units of machines, increased reliability and longer service life is an important task of modern mechanical engineering. The main objects of study in the work were selected steel 65G and 50HGA, wear-resistant boride coatings ternary system Fe-B-Fe n B which were investigated by scanning electron microscopy and eddy-current nondestructive methods.

  1. Development and application of high strength ternary boride base cermets

    SciTech Connect

    Takagi, Ken-ichi . E-mail: u4381@toyokohan.co.jp

    2006-09-15

    Reaction boronizing sintering is a novel strategy to form a ternary boride coexisting with a metal matrix in a cermet during liquid phase sintering. This new sintering technique has successfully developed world first ternary boride base cermets with excellent mechanical properties such as Mo{sub 2}FeB{sub 2}, Mo{sub 2}NiB{sub 2} and WCoB base ones. In these cermets Mo{sub 2}FeB{sub 2} and Mo{sub 2}NiB{sub 2} base ones consist of a tetragonal M {sub 3}B{sub 2} (M: metal)-type complex boride as a hard phase and a transition metal base matrix. The cermets have already been applied to wear resistant applications such as injection molding machine parts, can making tools, and hot copper extruding dies, etc. This paper focuses on the characteristics, effects of the additional elements on the mechanical properties and structure, and practical applications of the ternary boride base cermets. - Graphical abstract: TRS and hardness of Ni-5B-51Mo-17.5Cr and Ni-5B-51Mo-12.5Cr-5V-xMn mass% cermets as functions of Mn content (Fig. 17)

  2. Metals fact sheet - indium

    SciTech Connect

    1994-01-01

    Indium is generally found in concentrations averaging 10 to 20 ppm in sphalerite and chalcopyrite ores associated with zinc, copper, lead and tin deposits. Indium is recovered as a by-product of base metal mining by open pit, underground and other methods. After the recovery of zinc by the electrolytic process (copper concentrate by flotation, and lead and tin by electrolysis), indium antimonide slimes left on the anode and the indium-containing spent electrolyte become the input material for the processing of indium. Sulfuric acid is combined with the residues and heated to form sulfates which are then leached with water to filter off the remaining tin, lead and antimony. The indium in solution is recovered by cementation on aluminum, washed, melted, and refined into a metal.

  3. Nanosize cobalt boride particles: Control of the size and properties

    NASA Astrophysics Data System (ADS)

    Petit, C.; Pileni, M. P.

    1997-02-01

    Cobalt boride is obtained by the reduction of cobalt (2-ethyl hexyl) sulfosuccinate, Co(AOT) 2, by sodium borohydride either in reverse micelles or in a diphasic system. In Co(AOT) 2/Na(AOT)/H 2O reverse micellar solution, the size and polydispersity of the Co 2B particles is controlled by the size of the water droplets, which increases from 4 to 7.5 nm by increasing the water content. In a diphasic system of Co(AOT) 2/isooctane and sodium borohydride in aqueous solution, large and polydisperse particles of cobalt boride are formed (˜ 10 nm), and their magnetization properties are presented. The smallest particles are in a superparamagnetic regime at room temperature, whereas the largest particles show ferromagnetic behavior.

  4. Structural and Magnetic Properties of Ni Rich Amorphous Boride Nanoparticles

    SciTech Connect

    Singh, Vidyadhar; Banerjee, Progna; Srinivas, V.; Babu, N. H.

    2011-06-30

    The Ni rich amorphous boride nanoparticles can be prepared very easily by the solid-solid reaction of the NiCl{sub 2} and NaBH{sub 4} powders at room temperature. XRD, DTA-TG, FESEM, TEM, and selected-area electron diffraction characterize the resultant nanoparticles. The results show that the resultant is mainly composed of the amorphous Ni-B alloy nanoparticles with an average diameter of 15-25 nm.

  5. Synthesis of indium phosphide

    NASA Astrophysics Data System (ADS)

    Adamski, Joseph A.

    1983-11-01

    Polycrystalline ingots of indium phosphide have been synthesized using the direct reaction technique. Indium phosphide has been grown under various phosphorus pressures (3 to 30 atm). Several temperature profiles were used to study the effect of temperature on mobility, carrier concentration, grain size, homogeneity, and stoichiometry. Quartz and pyrolytic boron nitride boats are used. Several experiments were performed placing the PBN and quartz boats inside born nitride and aluminum oxide tubes in an attempt to lower silicon contamination. In-situ vacuum baking of the raw indium charge has resulted in a significant improvement in the purity of the synthesized InP.

  6. [Indium lung disease].

    PubMed

    Nakano, Makiko; Omae, Kazuyuki

    2014-02-01

    "Indium lung" is a new occupational lung disease. The global demand for indium, the major material used in manufacturing flat-screen display panels, has skyrocketed since the 1990s (Japan comprises 85% of the worldwide demand). The first case was reported in Japan in 2003, followed by seven cases (interstitial pneumonia and emphysema) in Japan. Two pulmonary alveolar proteinosis (PAP) cases in the USA followed in 2011. Indium lung has been described as interstitial pneumonia, pneumothorax, emphysema, and PAP. In 2013, The Japan Ministry of Health, Labor and Welfare issued an "Ordinance on the Prevention of Hazards Due to Specified Chemical Substances" requiring employers to provide regular health checks for employees and measurements of work environment concentrations of respirable indium dust.

  7. Characterisation of titanium-titanium boride composites processed by powder metallurgy techniques

    SciTech Connect

    Selva Kumar, M.; Chandrasekar, P.; Chandramohan, P.; Mohanraj, M.

    2012-11-15

    In this work, a detailed characterisation of titanium-titanium boride composites processed by three powder metallurgy techniques, namely, hot isostatic pressing, spark plasma sintering and vacuum sintering, was conducted. Two composites with different volume percents of titanium boride reinforcement were used for the investigation. One was titanium with 20% titanium boride, and the other was titanium with 40% titanium boride (by volume). Characterisation was performed using X-ray diffraction, electron probe micro analysis - energy dispersive spectroscopy and wavelength dispersive spectroscopy, image analysis and scanning electron microscopy. The characterisation results confirm the completion of the titanium boride reaction. The results reveal the presence of titanium boride reinforcement in different morphologies such as needle-shaped whiskers, short agglomerated whiskers and fine plates. The paper also discusses how mechanical properties such as microhardness, elastic modulus and Poisson's ratio are influenced by the processing techniques as well as the volume fraction of the titanium boride reinforcement. - Highlights: Black-Right-Pointing-Pointer Ti-TiB composites were processed by HIP, SPS and vacuum sintering. Black-Right-Pointing-Pointer The completion of Ti-TiB{sub 2} reaction was confirmed by XRD, SEM and EPMA studies. Black-Right-Pointing-Pointer Hardness and elastic properties of Ti-TiB composites were discussed. Black-Right-Pointing-Pointer Processing techniques were compared with respect to their microstructure.

  8. Reactive Boride Brazing on Low-Alloy Automotive Grade Steel

    NASA Astrophysics Data System (ADS)

    Palanisamy, B.; Upadhyaya, A.

    2011-11-01

    Brazing is a widely used process to improve the performance of steels used in automotive applications. The substrate material is often exposed to harsh conditions in these applications and may affect the service life of the component. Reactive boride brazing aims to improve the mechanical properties of the substrate material by forming a ceramic-metal composite coating in a single-step process in situ. In this study, sintered Ancor 4300 low-alloy steel is used as the substrate with chromium-rich braze and chromium-lean braze materials. The mechanical properties of the brazed samples were studied in detail using microindentation hardness measurements and the transverse rupture test. The results indicate that the brazed superlayer has a 10 times higher hardness. There was a significant improvement in the transverse rupture strength of the steel brazed with the chromium-rich boride as compared to the pure substrate material. In an effort to reduce processing time, green compacts of the substrate were also directly brazed and yielded favorable results.

  9. Discovery of elusive structures of multifunctional transition-metal borides.

    PubMed

    Liang, Yongcheng; Wu, Zhaobing; Yuan, Xun; Zhang, Wenqing; Zhang, Peihong

    2016-01-14

    A definitive determination of crystal structures is an important prerequisite for designing and exploiting new functional materials. Even though tungsten and molybdenum borides (TMBx) are the prototype for transition-metal light-element compounds with multiple functionalities, their elusive crystal structures have puzzled scientists for decades. Here, we discover that the long-assumed TMB2 phases with the simple hP3 structure (hP3-TMB2) are in fact a family of complex TMB3 polytypes with a nanoscale ordering along the axial direction. Compared with the energetically unfavorable and dynamically unstable hP3-TMB2 phase, the energetically more favorable and dynamically stable TMB3 polytypes explain the experimental structural parameters, mechanical properties, and X-ray diffraction (XRD) patterns better. We demonstrate that such a structural and compositional modification from the hP3-TMB2 phases to the TMB3 polytypes originates from the relief of the strong antibonding interaction between d electrons by removing one third of metal atoms systematically. These results resolve the longstanding structural mystery of this class of metal borides and uncover a hidden family of polytypic structures. Moreover, these polytypic structures provide an additional hardening mechanism by forming nanoscale interlocks that may strongly hinder the interlayer sliding movements, which promises to open a new avenue towards designing novel superhard nanocomposite materials by exploiting the coexistence of various polytypes.

  10. Microstructure and properties of laser-borided composite layers formed on commercially pure titanium

    NASA Astrophysics Data System (ADS)

    Kulka, M.; Makuch, N.; Dziarski, P.; Piasecki, A.; Miklaszewski, A.

    2014-03-01

    Laser-boriding was proposed in order to produce composite boride layers on commercially pure titanium. Three zones were observed in the microstructure: laser-borided re-melted zone (TiB, TiB2 and Tiα'-phase), heat affected zone (Tiα'-phase) and the substrate without heat treatment (Tiα-phase). The stick-like titanium borides occurred in the re-melted zone. In some areas, the tubular nature of titanium borides was visible. Among the sticks of titanium borides the needles of Tiα'-phase appeared. The high overlapping of multiple laser tracks (86%) caused the formation of uniform laser-alloyed layer in respect of the thickness. The microcracks and pores were not detected in the laser-borided composite layer. The high hardness of the re-melted zone (1250-1650 HV) was obtained. The hardness gradually decreased up to 250-300 HV in heat affected zone and up to about 200 HV in the substrate. In case of higher laser beam power used (1.95 kW), the re-melted zone was thicker and more homogeneous in respect of the microstructure and hardness. The craters obtained at the surface after the Rockwell C indentation test evidently revealed ideal cohesion of the laser-borided layer (HF1 standard). The significant increase in wear resistance of laser-borided composite layers was observed in comparison with commercially pure titanium. The lower mass wear intensity factors were obtained for laser-alloyed layers. The measurements of relative mass loss were also used in order to evaluate wear behavior of the investigated materials. The tests of laser-borided layers showed the catastrophic wear of the counter-specimens. The separated particles of counter-sample caused the accelerated wear of the laser-alloyed specimen. The longer duration of the tests, carried out without the change in a counter-specimen, caused the adhesion of counter-sample particles on the laser-borided specimen. The increased contact surface was the reason for the higher temperature and created the favourable

  11. Indium Lung Disease

    PubMed Central

    Nakano, Makiko; Omae, Kazuyuki; Takeuchi, Koichiro; Chonan, Tatsuya; Xiao, Yong-long; Harley, Russell A.; Roggli, Victor L.; Hebisawa, Akira; Tallaksen, Robert J.; Trapnell, Bruce C.; Day, Gregory A.; Saito, Rena; Stanton, Marcia L.; Suarthana, Eva; Kreiss, Kathleen

    2012-01-01

    Background: Reports of pulmonary fibrosis, emphysema, and, more recently, pulmonary alveolar proteinosis (PAP) in indium workers suggested that workplace exposure to indium compounds caused several different lung diseases. Methods: To better understand the pathogenesis and natural history of indium lung disease, a detailed, systematic, multidisciplinary analysis of clinical, histopathologic, radiologic, and epidemiologic data for all reported cases and workplaces was undertaken. Results: Ten men (median age, 35 years) who produced, used, or reclaimed indium compounds were diagnosed with interstitial lung disease 4-13 years after first exposure (n = 7) or PAP 1-2 years after first exposure (n = 3). Common pulmonary histopathologic features in these patients included intraalveolar exudate typical of alveolar proteinosis (n = 9), cholesterol clefts and granulomas (n = 10), and fibrosis (n = 9). Two patients with interstitial lung disease had pneumothoraces. Lung disease progressed following cessation of exposure in most patients and was fatal in two. Radiographic data revealed that two patients with PAP subsequently developed fibrosis and one also developed emphysematous changes. Epidemiologic investigations demonstrated the potential for exposure to respirable particles and an excess of lung abnormalities among coworkers. Conclusions: Occupational exposure to indium compounds was associated with PAP, cholesterol ester crystals and granulomas, pulmonary fibrosis, emphysema, and pneumothoraces. The available evidence suggests exposure to indium compounds causes a novel lung disease that may begin with PAP and progress to include fibrosis and emphysema, and, in some cases, premature death. Prospective studies are needed to better define the natural history and prognosis of this emerging lung disease and identify effective prevention strategies. PMID:22207675

  12. Deposition and characterization of aluminum magnesium boride thin film coatings

    NASA Astrophysics Data System (ADS)

    Tian, Yun

    Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness

  13. An alternative method of gas boriding applied to the formation of borocarburized layer

    SciTech Connect

    Kulka, M. Makuch, N.; Pertek, A.; Piasecki, A.

    2012-10-15

    The borocarburized layers were produced by tandem diffusion processes: carburizing followed by boriding. An alternative method of gas boriding was proposed. Two-stage gas boronizing in N{sub 2}-H{sub 2}-BCl{sub 3} atmosphere was applied to the formation of iron borides on a carburized substrate. This process consisted in two stages, which were alternately repeated: saturation by boron and diffusion annealing. The microstructure and microhardness of produced layer were compared to those-obtained in case of continuous gas boriding in H{sub 2}-BCl{sub 3} atmosphere, earlier used. The first objective of two-stage boronizing, consisting in acceleration of boron diffusion, has been efficiently implemented. Despite the lower temperature and shorter duration of boronizing, about 1.5 times larger iron borides' zone has been formed on carburized steel. Second objective, the absolute elimination of brittle FeB phase, has failed. However, the amount of FeB phase has been considerably limited. Longer diffusion annealing should provide the boride layer with single-phase microstructure, without FeB phase. - Highlights: Black-Right-Pointing-Pointer Alternative method of gas boriding in H{sub 2}-N{sub 2}-BCl{sub 3} atmosphere was proposed. Black-Right-Pointing-Pointer The process consisted in two stages: saturation by boron and diffusion annealing. Black-Right-Pointing-Pointer These stages of short duration were alternately repeated. Black-Right-Pointing-Pointer The acceleration of boron diffusion was efficiently implemented. Black-Right-Pointing-Pointer The amount of FeB phase in the boride zone was limited.

  14. Plasma boriding of a cobalt-chromium alloy as an interlayer for nanostructured diamond growth

    NASA Astrophysics Data System (ADS)

    Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A.

    2015-02-01

    Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt-chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B2H6) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal-boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

  15. Indium sealing techniques.

    NASA Technical Reports Server (NTRS)

    Hochuli, U.; Haldemann, P.

    1972-01-01

    Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.

  16. Morphology and structure of borides in as-cast titanium and gamma-titanium aluminide-based alloys

    NASA Astrophysics Data System (ADS)

    Kitkamthorn, Usanee

    In this study, the morphology and structure of the borides in boron-modified Ti- and gamma-TiAl-based alloys have been investigated using SEM, TEM, and HRTEM. A variety of different boride morphologies was observed including plates, needles, and ribbons. For the plate and needle borides, the major boride phase is B27 TiB. The needle borides have their major axis parallel to [010], and are bounded by (100) and {101} type-facets. The plate borides develop the same types of facets as the needles and have habit planes parallel to the (100). There are high densities of intrinsic stacking faults on (100) in these borides and these correspond to thin embedded layers of the Bf structure. The plate borides do not exhibit well-defined ORs with respect to the surrounding phases, suggesting that they develop in the liquid melt and were then trapped by the growing solid. Needle borides are observed mostly at boundaries between lamellar colonies: these needles tend to occur in groups lying nearly parallel to one another and, in some cases, to adopt well-defined ORs with respect to the surrounding phases. Cored borides with metallic phases such as beta, alpha, o and alpha 2+gamma in the center are frequently observed, especially in the Ti-based alloy. These core phases usually adopt well-defined ORs with respect to the surrounding boride which enable low-energy coherent interfaces to form between the phases. The ribbon borides are comprised of thin boride flakes interspersed with thin metallic layers. The major boride phase in these flakes is Bf TiB. The habit plane of the flakes is (010) and there are high densities of faults on this plane corresponding to intergrowths of the Ti3B 4 and TiB2 phases, together with thin layers or occluded pockets of metallic B2 phase. Occasional faults are observed on {110} corresponding to embedded slabs of B27 TiB. There is a well-defined OR between the boride flakes and the B2 phase within the ribbons, but not with the surrounding matrix. The

  17. Respirable Indium Exposures, Plasma Indium, and Respiratory Health Among Indium-Tin Oxide (ITO) Workers

    PubMed Central

    Cummings, Kristin J.; Virji, M. Abbas; Park, Ji Young; Stanton, Marcia L.; Edwards, Nicole T.; Trapnell, Bruce C.; Carey, Brenna; Stefaniak, Aleksandr B.; Kreiss, Kathleen

    2016-01-01

    Background Workers manufacturing indium-tin oxide (ITO) are at risk of elevated indium concentration in blood and indium lung disease, but relationships between respirable indium exposures and biomarkers of exposure and disease are unknown. Methods For 87 (93%) current ITO workers, we determined correlations between respirable and plasma indium and evaluated associations between exposures and health outcomes. Results Current respirable indium exposure ranged from 0.4 to 108 μg/m3 and cumulative respirable indium exposure from 0.4 to 923 μg-yr/m3. Plasma indium better correlated with cumulative (rs = 0.77) than current exposure (rs = 0.54) overall and with tenure ≥1.9 years. Higher cumulative respirable indium exposures were associated with more dyspnea, lower spirometric parameters, and higher serum biomarkers of lung disease (KL-6 and SP-D), with significant effects starting at 22 μg-yr/m3, reached by 46% of participants. Conclusions Plasma indium concentration reflected cumulative respirable indium exposure, which was associated with clinical, functional, and serum biomarkers of lung disease. PMID:27219296

  18. Indium Sorption to Iron Oxides

    NASA Astrophysics Data System (ADS)

    White, S. J.; Sacco, S. A.; Hemond, H.; Hussain, F. A.; Runkel, R. L.; Walton-Day, K. E.; Kimball, B. A.; Shine, J. P.

    2014-12-01

    Indium is an increasingly important metal in semiconductors and electronics, and its use is growing rapidly as a semiconductive coating (as indium tin oxide) for liquid crystal displays (LCDs) and flat panel displays. It also has uses in important energy technologies such as light emitting diodes (LEDs) and photovoltaic cells. Despite its rapid increase in use, very little is known about the environmental behavior of indium, and concerns are being raised over the potential health effects of this emerging metal contaminant. One source of indium to the environment is acid mine drainage from the mining of lead, zinc, and copper sulfides. In our previous studies of a stream in Colorado influenced by acid mine drainage from lead and zinc mining activities, indium concentrations were found to be 10,000 times those found in uncontaminated rivers. However, the speciation and mobility of indium could not be reliably modeled because sorption constants to environmental sorbents have not been determined. In this study, we generate sorption constants for indium to ferrihydrite in the laboratory over a range of pHs, sorbent to sorbate ratios, and ionic strengths. Ferrihydrite is one of the most important sorbents in natural systems, and sorption to amorphous iron oxides such as ferrihydrite is thought to be one of the main removal mechanisms of metals from the dissolved phase in aqueous environments. Because of its relatively low solubility, we also find that indium hydroxide precipitation can dominate indium's partitioning at micromolar concentrations of indium. This precipitation may be important in describing indium's behavior in our study stream in Colorado, where modeling sorption to iron-oxides does not explain the complete removal of indium from the dissolved phase when the pH of the system is artificially raised to above 8. This study contributes much-needed data about indium's aqueous behavior, in order to better understand its fate, transport, and impacts in the

  19. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOEpatents

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  20. The Growth Behavior of Titanium Boride Layers in α and β Phase Fields of Titanium

    NASA Astrophysics Data System (ADS)

    Lv, Xiaojun; Hu, Lingyun; Shuang, Yajing; Liu, Jianhua; Lai, Yanqing; Jiang, Liangxing; Li, Jie

    2016-07-01

    In this study, the commercially pure titanium was successfully electrochemical borided in a borax-based electrolyte. The process was carried out at a constant cathodic current density of 300 mA cm-2 and at temperatures of 1123 K and 1223 K (850 °C and 950 °C) for 0.5, 1, 2, 3, and 5 hours. The growth behavior of titanium boride layers in the α phase field of titanium was compared with that in the β phase field. After boriding, the presence of both the TiB2 top layer and TiB whisker sub-layer was confirmed by the X-ray diffraction (XRD) and scanning electron microscope. The relationship between the thickness of boride layers and boriding time was found to have a parabolic character in both α and β phase fields of titanium. The TiB whiskers showed ultra-fast growth rate in the β phase field. Its growth rate constant was found to be as high as 3.2002 × 10-13 m2 s-1. Besides, the chemical resistance of the TiB2 layer on the surface of titanium substrate was characterized by immersion tests in molten aluminum.

  1. Metal boride catalysts for indirect liquefaction. Quarterly technical progress report, December 1, 1983-February 29, 1984

    SciTech Connect

    Bartholomew, C.H.

    1984-04-12

    During the sixth quarter four boron-promoted cobalt catalysts were prepared by a new boriding process using diborane gas as the boriding agent. These catalysts were characterized by chemical analysis, BET, H/sub 2/ chemisorption, and x-ray diffraction. Temperature-programmed desorption spectra of H/sub 2/ were obtained for a sodium-promoted cobalt boride and a sodium-promoted Co/SiO/sub 2/. Four cobalt catalysts (unsupported, boron-promoted, sodium-promoted, and doubly-promoted) were tested for CO hydrogenation activity and selectivity at 1 atm and 3 to 4 temperatures in the range of 190 to 240/sup 0/C. About 10% of the surface of cobalt boride consists of reduced metallic cobalt. The addition of sodium to cobalt increases its binding energy with H/sub 2/ and its activation energy for H/sub 2/ adsorption. Boron does not affect the activity of cobalt; sodium decreases it by a factor of 10. Cobalt boride produces lighter hydrocarbon products relative to cobalt; sodium-promoted cobalt produces heavier products, more alcohols, and more CO/sub 2/. 29 references, 10 figures, 4 tables.

  2. Nano-Disperse Borides and Carbides: Plasma Technology Production, Specific Properties, Economic Evaluation

    NASA Astrophysics Data System (ADS)

    Galevskii, G. V.; Rudneva, V. V.; Galevskii, S. G.; Tomas, K. I.; Zubkov, M. S.

    2016-04-01

    The experience of production and study on properties of nano-disperse chromium and titanium borides and carbides, and silicon carbide has been generalized. The structure and special service aspects of utilized plasma-metallurgical complex equipped with a three-jet direct-flow reactor with a capacity of 150 kW have been outlined. Processing, heat engineering and service life characteristics of the reactor are specified. The synthesis parameters of borides and carbides, as well as their basic characteristics in nano-disperse condition and their production flow diagram are outlined. Engineering and economic performance of synthesizing borides in laboratory and industrial conditions is assessed, and the respective segment of the international market as well. The work is performed at State Siberian Industrial University as a project part of the State Order of Ministry of Science and Education of the Russian Federation No. 11.1531/2014/K.

  3. Boride-based nano-laminates with MAX-phase-like behaviour

    SciTech Connect

    Telle, Rainer . E-mail: telle@ghi.rwth-aachen.de; Momozawa, Ai; Music, Denis; Schneider, Jochen M.

    2006-09-15

    MAX-phases being usually composed of transition metals, group A elements and carbon/nitrogen are considered interesting materials for many applications because of their tremendous bulk modulus, 'reversible' plasticity, and machinability. This is mainly due to their unique kind of bonding comprising covalent, ionic as well as metallic bonds providing 'easy' planes of rupture and deformability due to the layered crystal structures. In transition metal boride systems, similar types of bonding are available. In particular the W{sub 2}B{sub 5}-structure type and its stacking variations allow the synthesis of strongly layered crystal structures exhibiting unique delamination phenomena. The paper presents ab initio calculations showing the similarities of bonding between the ternary carbides and the corresponding ternary or quaternary borides. Formation of boride-based nano-laminates from auxiliary liquid phases, from the melt as well as during sintering and precipitation from supersaturated solid solutions will be discussed by means of SEM and TEM studies. The role of impurities weakening the interlayer bonding will be addressed in particular. The pronounced cleavage parallel to the basal plane gives rise for crack deflection and pull-out mechanisms if the laminates are dispersed in brittle matrices such as boron carbide, silicon carbide or other transition metal borides. - Graphical abstract: Some transition metal borides crystallise in a layered structure of alternating stacks of metal and boron atoms giving rise for strongly anisotropic properties. Their preferred cleavage parallel and the deformability perpendicular to the basal plan are similar to the peculiar mechanical behaviour recently described for MAX-phases. Ab initio calculations of the crystal structure prove the weak bonds between the layers for a variety of borides which can be used to reinforce ceramic materials on a nano-scale level.

  4. Surface hardening of steel by boriding in a cold rf plasma

    NASA Technical Reports Server (NTRS)

    Finberg, I.; Avni, R.; Grill, A.; Spalvins, T.; Buckley, D. H.

    1985-01-01

    Scanning electron spectroscopy, X-ray diffractometry, Auger electron spectroscopy, and microhardness measurements, are used to study the surfaces of 4340-steel samples that have been borided in a cold RF plasma which had been initiated in a gas mixture of 2.7 percent diborane in Ar. As a result of the dislocation of the diborane in the plasma, boron is deposited on the surface of the steel substrate and two crystalline phases, tetragonal Fe2B and orthorhombic FeB, are formed. The formation of boride phases then increases the surface microhardness from 2650 MPa to a maximum value of 7740 MPa.

  5. Mineral of the month: indium

    USGS Publications Warehouse

    George, Micheal W.

    2004-01-01

    Indium was discovered in Germany in 1863. Although it is a lustrous silver-white color, the finders named the new material for the “indigo” spectral lines the mineral created on the spectrograph. Indium ranks 61st in abundance in Earth’s crust and is about three times more abundant than silver or mercury.

  6. Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Johnston, Jamin M.; Catledge, Shane A.

    2016-02-01

    Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W2CoB2 with average hardness from 23 to 27 GPa and average elastic modulus of 600-730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

  7. Niobium boride layers deposition on the surface AISI D2 steel by a duplex treatment

    SciTech Connect

    Kon, O.; Pazarlioglu, S.

    2015-03-30

    In this paper, we investigated the possibility of deposition of niobium boride layers on the surface of AISI D2 steel by a duplex treatment. At the first step of duplex treatment, boronizing was performed on AISI D2 steel samples at 1000{sup o}C for 2h and then pre-boronized samples niobized at 850°C, 900°C and 950°C using thermo-reactive deposition method for 1–4 h. The presence of the niobium boride layers such as NbB, NbB{sub 2} and Nb{sub 3}B{sub 4} and also iron boride phases such as FeB, Fe{sub 2}B were examined by X-ray diffraction analysis. Scanning electron microscope (SEM) and micro-hardness measurements were realized. Experimental studies showed that the depth of the coating layers increased with increasing temperature and times and also ranged from 0.42 µm to 2.43 µm, depending on treatment time and temperature. The hardness of the niobium boride layer was 2620±180 HV{sub 0.005}.

  8. Superabrasive boride and a method of preparing the same by mechanical alloying and hot pressing

    DOEpatents

    Cook, Bruce A.; Harringa, Joel L.; Russell, Alan M.

    2002-08-13

    A ceramic material which is an orthorhombic boride of the general formula: AlMgB.sub.14 :X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40 GPa or greater.

  9. Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

    SciTech Connect

    Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

    2012-10-15

    General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB{sub 2}, ZrB{sub 2}, NbB{sub 2}, CeB{sub 6}, PrB{sub 6}, SmB{sub 6}, EuB{sub 6}, LaB{sub 6}), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN{sub 2}, VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN{sub 3} with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to {approx}850 Degree-Sign C, once the autoclave was heated to 100 Degree-Sign C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: Black-Right-Pointing-Pointer An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. Black-Right-Pointing-Pointer The reaction mechanism is demonstrated by the case of SiC nanowires. Black-Right-Pointing-Pointer The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

  10. Potential and limitations of microanalysis SEM techniques to characterize borides in brazed Ni-based superalloys

    SciTech Connect

    Ruiz-Vargas, J.; Siredey-Schwaller, N.; Noyrez, P.; Mathieu, S.; Bocher, P.; and others

    2014-08-15

    Brazed Ni-based superalloys containing complex phases of different Boron contents remain difficult to characterize at the micrometer scale. Indeed Boron is a light element difficult to measure precisely. The state-of-the-art microanalysis systems have been tested on a single crystal MC2 based metal brazed with BNi-2 alloy to identify boride precipitates. Effort has been made to evaluate the accuracy in Boron quantitation. Energy-dispersive and wavelength-dispersive X-ray spectroscopy attached to a Scanning Electron Microscope have first been used to determine the elemental composition of Boron-free phases, and then applied to various types of borides. Results have been compared to the ones obtained using a dedicated electron probe microanalysis, considered here as the reference technique. The most accurate method to quantify Boron using EDS is definitely by composition difference. A precision of 5 at.% could be achieved with optimized data acquisition and post-processing schemes. Attempts that aimed at directly quantifying Boron with various standards using EDS or coupled EDS/WDS gave less accurate results. Ultimately, Electron Backscatter Diffraction combined with localized EDS analysis has proved invaluable in conclusively identifying micrometer sized boride precipitates; thus further improving the characterization of brazed Ni-based superalloys. - Highlights: • We attempt to accurately identify Boron-rich phases in Ni-based superalloys. • EDS, WDS, EBSD systems are tested for accurate identification of these borides. • Results are compared with those obtained by electron probe microanalysis. • Boron was measured with EDS by composition difference with a precision of 5 at. %. • Additional EBSD in phase identification mode conclusively identifies the borides.

  11. Selection of peptides binding to metallic borides by screening M13 phage display libraries

    PubMed Central

    2014-01-01

    Background Metal borides are a class of inorganic solids that is much less known and investigated than for example metal oxides or intermetallics. At the same time it is a highly versatile and interesting class of compounds in terms of physical and chemical properties, like semiconductivity, ferromagnetism, or catalytic activity. This makes these substances attractive for the generation of new materials. Very little is known about the interaction between organic materials and borides. To generate nanostructured and composite materials which consist of metal borides and organic modifiers it is necessary to develop new synthetic strategies. Phage peptide display libraries are commonly used to select peptides that bind specifically to metals, metal oxides, and semiconductors. Further, these binding peptides can serve as templates to control the nucleation and growth of inorganic nanoparticles. Additionally, the combination of two different binding motifs into a single bifunctional phage could be useful for the generation of new composite materials. Results In this study, we have identified a unique set of sequences that bind to amorphous and crystalline nickel boride (Ni3B) nanoparticles, from a random peptide library using the phage display technique. Using this technique, strong binders were identified that are selective for nickel boride. Sequence analysis of the peptides revealed that the sequences exhibit similar, yet subtle different patterns of amino acid usage. Although a predominant binding motif was not observed, certain charged amino acids emerged as essential in specific binding to both substrates. The 7-mer peptide sequence LGFREKE, isolated on amorphous Ni3B emerged as the best binder for both substrates. Fluorescence microscopy and atomic force microscopy confirmed the specific binding affinity of LGFREKE expressing phage to amorphous and crystalline Ni3B nanoparticles. Conclusions This study is, to our knowledge, the first to identify peptides that

  12. Improving the Adhesion Resistance of the Boride Coatings to AISI 316L Steel Substrate by Diffusion Annealing

    NASA Astrophysics Data System (ADS)

    Campos-Silva, I.; Bernabé-Molina, S.; Bravo-Bárcenas, D.; Martínez-Trinidad, J.; Rodríguez-Castro, G.; Meneses-Amador, A.

    2016-07-01

    In this study, new results about the practical adhesion resistance of boride coating/substrate system formed at the surface of AISI 316 L steel and improved by means of a diffusion annealing process are presented. First, the boriding of AISI 316 L steel was performed by the powder-pack method at 1173 K with different exposure times (4-8 h). The diffusion annealing process was conducted on the borided steels at 1273 K with 2 h of exposure using a diluent atmosphere of boron powder mixture. The mechanical behavior of the boride coating/substrate system developed by both treatments was established using Vickers and Berkovich tests along the depth of the boride coatings, respectively. Finally, for the entire set of experimental conditions, the scratch tests were performed with a continuously increasing normal force, in which the practical adhesion resistance of the boride coating/substrate system was represented by the critical load. The failure mechanisms developed over the surface of the scratch tracks were analyzed; the FeB-Fe2B/substrate system exhibited an adhesive mode, while the Fe2B/substrate system obtained by the diffusion annealing process showed predominantly a cohesive failure mode.

  13. Improving the Adhesion Resistance of the Boride Coatings to AISI 316L Steel Substrate by Diffusion Annealing

    NASA Astrophysics Data System (ADS)

    Campos-Silva, I.; Bernabé-Molina, S.; Bravo-Bárcenas, D.; Martínez-Trinidad, J.; Rodríguez-Castro, G.; Meneses-Amador, A.

    2016-09-01

    In this study, new results about the practical adhesion resistance of boride coating/substrate system formed at the surface of AISI 316 L steel and improved by means of a diffusion annealing process are presented. First, the boriding of AISI 316 L steel was performed by the powder-pack method at 1173 K with different exposure times (4-8 h). The diffusion annealing process was conducted on the borided steels at 1273 K with 2 h of exposure using a diluent atmosphere of boron powder mixture. The mechanical behavior of the boride coating/substrate system developed by both treatments was established using Vickers and Berkovich tests along the depth of the boride coatings, respectively. Finally, for the entire set of experimental conditions, the scratch tests were performed with a continuously increasing normal force, in which the practical adhesion resistance of the boride coating/substrate system was represented by the critical load. The failure mechanisms developed over the surface of the scratch tracks were analyzed; the FeB-Fe2B/substrate system exhibited an adhesive mode, while the Fe2B/substrate system obtained by the diffusion annealing process showed predominantly a cohesive failure mode.

  14. Adsorption of micelle-forming surfactants from aqueous solutions on disperse titanium boride

    SciTech Connect

    Grodskii, A.S.; Komleva, E.A.; Frolov, Yu.G.

    1988-08-10

    Adsorption studies showed that nonionogenic and cationic surfactants are adsorbed on the surface of disperse titanium boride. Anionic surfactants are virtually not adsorbed due to the negative charge of the particles. It was found that in the region of low concentrations of surfactants in the solution, adsorption of Sintanols takes place in lyophobic regions and the surface of the particles becomes hydrophilic. The Sintamid molecules are adsorbed on the entire interface, including both hydrophobic and hydrophilic sections, with subsequent formation of bimolecular layers by adsorption on hydrophobic sections. Catamine-AB is adsorbed on hydrophilic sections of the surface also with the formation of bimolecular layers. Developed polymolecular layers up to 10-15 nm thick are formed on titanium boride particles from micellar solutions of nonionigenic and cationic surfactants.

  15. A Crossover from High Stiffness to High Hardness: The Case of Osmium and Its Borides

    NASA Astrophysics Data System (ADS)

    Bian, Yongming; Liu, Xiaomei; Li, Anhu; Liang, Yongcheng

    2016-09-01

    Transition-metal light-element compounds are currently raising great expectations for hard and superhard materials. Using the widely attracting osmium (Os) and its borides (OsB, Os2B3 and OsB2) as prototypes, we demonstrate by first-principles calculations that heavy transition metals, which possess high stiffness but low hardness, can be converted into highly hard materials by incorporating of light elements to form compounds. Such a crossover is a manifestation that the underlying sources of high stiffness and high hardness are fundamentally different. The stiffness is related to elastic deformation that is closely associated with valence electron density, whereas the hardness depends strongly on plastic deformation that is determined by bonding nature. Therefore, the incorporation of light atoms into transition metal should be a valid pathway of designing hard and superhard materials. This strategy is in principle also applicable to other transition-metal borides, carbides, and nitrides.

  16. Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1978-01-01

    The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

  17. Synthesis and Characterization of an Alumina Forming Nanolaminated Boride: MoAlB

    NASA Astrophysics Data System (ADS)

    Kota, Sankalp; Zapata-Solvas, Eugenio; Ly, Alexander; Lu, Jun; Elkassabany, Omar; Huon, Amanda; Lee, William E.; Hultman, Lars; May, Steve J.; Barsoum, Michel W.

    2016-05-01

    The ‘MAlB’ phases are nanolaminated, ternary transition metal borides that consist of a transition metal boride sublattice interleaved by monolayers or bilayers of pure aluminum. However, their synthesis and properties remain largely unexplored. Herein, we synthesized dense, predominantly single-phase samples of one such compound, MoAlB, using a reactive hot pressing method. High-resolution scanning transmission electron microscopy confirmed the presence of two Al layers in between a Mo-B sublattice. Unique among the transition metal borides, MoAlB forms a dense, mostly amorphous, alumina scale when heated in air. Like other alumina formers, the oxidation kinetics follow a cubic time-dependence. At room temperature, its resistivity is low (0.36–0.49 μΩm) and – like a metal – drops linearly with decreasing temperatures. It is also a good thermal conductor (35 Wm‑1K‑1 at 26 °C). In the 25–1300 °C temperature range, its thermal expansion coefficient is 9.5 × 10‑6 K‑1. Preliminary results suggest the compound is stable to at least 1400 °C in inert atmospheres. Moderately low Vickers hardness values of 10.6 ± 0.3 GPa, compared to other transition metal borides, and ultimate compressive strengths up to 1940 ± 103 MPa were measured at room temperature. These results are encouraging and warrant further study of this compound for potential use at high temperatures.

  18. Direct Hydrogenation Magnesium Boride to Magnesium Borohydride: Demonstration of >11 Weight Percent Reversible Hydrogen Storage

    SciTech Connect

    Severa, Godwin; Ronnebro, Ewa; Jensen, Craig M.

    2010-11-16

    We here for the first time demonstrate direct hydrogenation of magnesium boride, MgB2, to magnesium borohydride, Mg(BH4)2 at 900 bar H2-pressures and 400°C. Upon 14.8wt% hydrogen release, the end-decomposition product of Mg(BH4)2 is MgB2, thus, this is a unique reversible path here obtaining >11wt% H2 which implies promise for a fully reversible hydrogen storage material.

  19. Studies of refractory carbides, nitrides, and borides as the thermionic emitters for electron microscopy.

    PubMed

    Yada, K; Masaoka, H; Shoji, Y; Tanji, T

    1989-07-01

    Thermionic emission properties of several kinds of refractory carbides, nitrides, and borides of the transition metals in the form of powder were investigated with a newly developed measuring device and evaluated by the figure of merit defined as the ratio of the effective work function to the working temperature at which the vapor pressure becomes 1 x 10(-5) Torr. There are several materials whose thermionic emission properties are better than those of tungsten or compatible to those of tungsten among the carbides and borides, such as TaC, HfC, ZrC, LaB6, and CeB6, as judged by the figure of merit. New preparation methods for carburization, nitriding, and boriding of the wires of matrix metals and alloys were successfully developed for using these materials as the cathode of the electron microscope. Other necessary techniques such as spot welding and electrolytic etching were also developed. From the brightness characteristics, it was found that some of carbides, carbide solid solutions, and borides such as HfC, ZrC (Ta0.8-0.7Hf0.2-0.3)C, TaB2, and HfB2 are very good emitters comparable to LaB6. It is emphasized that the work functions of the carbide-solid solutions (Ta0.8Hf0.2)C and (Ta0.7Hf0.3)C, which have low rates of evaporation at high temperature, show no remarkable rise as compared with that of HfC, so that their figures of merit are better than that of HfC. Feasibility of providing good cathodes with HfC and (Ta0.8Hf0.2)C tips was demonstrated by taking high-resolution electron micrographs.

  20. Heat capacity and thermal expansion of icosahedral lutetium boride LuB66

    SciTech Connect

    Novikov, V V; Avdashchenko, D V; Matovnikov, A V; Mitroshenkov, N V; Bud’ko, S L

    2014-01-07

    The experimental values of heat capacity and thermal expansion for lutetium boride LuB66 in the temperature range of 2-300 K were analysed in the Debye-Einstein approximation. It was found that the vibration of the boron sub-lattice can be considered within the Debye model with high characteristic temperatures; low-frequency vibration of weakly connected metal atoms is described by the Einstein model.

  1. Synthesis and Characterization of an Alumina Forming Nanolaminated Boride: MoAlB

    PubMed Central

    Kota, Sankalp; Zapata-Solvas, Eugenio; Ly, Alexander; Lu, Jun; Elkassabany, Omar; Huon, Amanda; Lee, William E.; Hultman, Lars; May, Steve J.; Barsoum, Michel W.

    2016-01-01

    The ‘MAlB’ phases are nanolaminated, ternary transition metal borides that consist of a transition metal boride sublattice interleaved by monolayers or bilayers of pure aluminum. However, their synthesis and properties remain largely unexplored. Herein, we synthesized dense, predominantly single-phase samples of one such compound, MoAlB, using a reactive hot pressing method. High-resolution scanning transmission electron microscopy confirmed the presence of two Al layers in between a Mo-B sublattice. Unique among the transition metal borides, MoAlB forms a dense, mostly amorphous, alumina scale when heated in air. Like other alumina formers, the oxidation kinetics follow a cubic time-dependence. At room temperature, its resistivity is low (0.36–0.49 μΩm) and – like a metal – drops linearly with decreasing temperatures. It is also a good thermal conductor (35 Wm−1K−1 at 26 °C). In the 25–1300 °C temperature range, its thermal expansion coefficient is 9.5 × 10−6 K−1. Preliminary results suggest the compound is stable to at least 1400 °C in inert atmospheres. Moderately low Vickers hardness values of 10.6 ± 0.3 GPa, compared to other transition metal borides, and ultimate compressive strengths up to 1940 ± 103 MPa were measured at room temperature. These results are encouraging and warrant further study of this compound for potential use at high temperatures. PMID:27220751

  2. Synthesis and Characterization of an Alumina Forming Nanolaminated Boride: MoAlB.

    PubMed

    Kota, Sankalp; Zapata-Solvas, Eugenio; Ly, Alexander; Lu, Jun; Elkassabany, Omar; Huon, Amanda; Lee, William E; Hultman, Lars; May, Steve J; Barsoum, Michel W

    2016-01-01

    The 'MAlB' phases are nanolaminated, ternary transition metal borides that consist of a transition metal boride sublattice interleaved by monolayers or bilayers of pure aluminum. However, their synthesis and properties remain largely unexplored. Herein, we synthesized dense, predominantly single-phase samples of one such compound, MoAlB, using a reactive hot pressing method. High-resolution scanning transmission electron microscopy confirmed the presence of two Al layers in between a Mo-B sublattice. Unique among the transition metal borides, MoAlB forms a dense, mostly amorphous, alumina scale when heated in air. Like other alumina formers, the oxidation kinetics follow a cubic time-dependence. At room temperature, its resistivity is low (0.36-0.49 μΩm) and - like a metal - drops linearly with decreasing temperatures. It is also a good thermal conductor (35 Wm(-1)K(-1) at 26 °C). In the 25-1300 °C temperature range, its thermal expansion coefficient is 9.5 × 10(-6 )K(-1). Preliminary results suggest the compound is stable to at least 1400 °C in inert atmospheres. Moderately low Vickers hardness values of 10.6 ± 0.3 GPa, compared to other transition metal borides, and ultimate compressive strengths up to 1940 ± 103 MPa were measured at room temperature. These results are encouraging and warrant further study of this compound for potential use at high temperatures. PMID:27220751

  3. Synthesis and Characterization of an Alumina Forming Nanolaminated Boride: MoAlB.

    PubMed

    Kota, Sankalp; Zapata-Solvas, Eugenio; Ly, Alexander; Lu, Jun; Elkassabany, Omar; Huon, Amanda; Lee, William E; Hultman, Lars; May, Steve J; Barsoum, Michel W

    2016-05-25

    The 'MAlB' phases are nanolaminated, ternary transition metal borides that consist of a transition metal boride sublattice interleaved by monolayers or bilayers of pure aluminum. However, their synthesis and properties remain largely unexplored. Herein, we synthesized dense, predominantly single-phase samples of one such compound, MoAlB, using a reactive hot pressing method. High-resolution scanning transmission electron microscopy confirmed the presence of two Al layers in between a Mo-B sublattice. Unique among the transition metal borides, MoAlB forms a dense, mostly amorphous, alumina scale when heated in air. Like other alumina formers, the oxidation kinetics follow a cubic time-dependence. At room temperature, its resistivity is low (0.36-0.49 μΩm) and - like a metal - drops linearly with decreasing temperatures. It is also a good thermal conductor (35 Wm(-1)K(-1) at 26 °C). In the 25-1300 °C temperature range, its thermal expansion coefficient is 9.5 × 10(-6 )K(-1). Preliminary results suggest the compound is stable to at least 1400 °C in inert atmospheres. Moderately low Vickers hardness values of 10.6 ± 0.3 GPa, compared to other transition metal borides, and ultimate compressive strengths up to 1940 ± 103 MPa were measured at room temperature. These results are encouraging and warrant further study of this compound for potential use at high temperatures.

  4. Structure of superhard tungsten tetraboride: A missing link between MB2 and MB12 higher borides

    PubMed Central

    Lech, Andrew T.; Turner, Christopher L.; Mohammadi, Reza; Tolbert, Sarah H.; Kaner, Richard B.

    2015-01-01

    Superhard metals are of interest as possible replacements with enhanced properties over the metal carbides commonly used in cutting, drilling, and wear-resistant tooling. Of the superhard metals, the highest boride of tungsten—often referred to as WB4 and sometimes as W1–xB3—is one of the most promising candidates. The structure of this boride, however, has never been fully resolved, despite the fact that it was discovered in 1961—a fact that severely limits our understanding of its structure–property relationships and has generated increasing controversy in the literature. Here, we present a new crystallographic model of this compound based on refinement against time-of-flight neutron diffraction data. Contrary to previous X-ray–only structural refinements, there is strong evidence for the presence of interstitial arrangements of boron atoms and polyhedral bonding. The formation of these polyhedra—slightly distorted boron cuboctahedra—appears to be dependent upon the defective nature of the tungsten-deficient metal sublattice. This previously unidentified structure type has an intermediary relationship between MB2 and MB12 type boride polymorphs. Manipulation of the fractionally occupied metal and boron sites may provide insight for the rational design of new superhard metals. PMID:25733870

  5. Structure of superhard tungsten tetraboride: a missing link between MB2 and MB12 higher borides.

    PubMed

    Lech, Andrew T; Turner, Christopher L; Mohammadi, Reza; Tolbert, Sarah H; Kaner, Richard B

    2015-03-17

    Superhard metals are of interest as possible replacements with enhanced properties over the metal carbides commonly used in cutting, drilling, and wear-resistant tooling. Of the superhard metals, the highest boride of tungsten--often referred to as WB4 and sometimes as W(1-x)B3--is one of the most promising candidates. The structure of this boride, however, has never been fully resolved, despite the fact that it was discovered in 1961--a fact that severely limits our understanding of its structure-property relationships and has generated increasing controversy in the literature. Here, we present a new crystallographic model of this compound based on refinement against time-of-flight neutron diffraction data. Contrary to previous X-ray-only structural refinements, there is strong evidence for the presence of interstitial arrangements of boron atoms and polyhedral bonding. The formation of these polyhedral--slightly distorted boron cuboctahedra--appears to be dependent upon the defective nature of the tungsten-deficient metal sublattice. This previously unidentified structure type has an intermediary relationship between MB2 and MB12 type boride polymorphs. Manipulation of the fractionally occupied metal and boron sites may provide insight for the rational design of new superhard metals.

  6. Distinct surface hydration behaviors of boron-rich boride thin film coatings

    NASA Astrophysics Data System (ADS)

    Lu, Xinhong; Liu, Wei; Ouyang, Jun; Tian, Yun

    2014-08-01

    In this work, the surface boron chemical states and surface hydration behaviors of the as-deposited and annealed boron-rich boride thin film coatings, including AlMgB14, TiB2 and AlMgB14-TiB2, were systematically studied by use of X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The XPS results indicate that boron at annealed AlMgB14 film surface can be oxidized; surprisingly, such oxidation does not lead to the formation of boric acid in ambient air. Instead, boric acid can be produced at the surface of annealed TiB2 film and AlMgB14-TiB2 film. It is shown, via the water contact angle measurements, that these boride films exhibit distinct surface wettability characteristics, which are believed to result in the observed surface hydration processes. Furthermore, we found anatase TiO2 formation plays a major role in the surface wetting behaviors for these boride films.

  7. Indium Foil Serves As Thermally Conductive Gasket

    NASA Technical Reports Server (NTRS)

    Eastman, G. Yale; Dussinger, Peter M.

    1993-01-01

    Indium foil found useful as gasket to increase thermal conductance between bodies clamped together. Deforms to fill imperfections on mating surfaces. Used where maximum temperature in joint less than melting temperature of indium. Because of low melting temperature of indium, most useful in cryogenic applications.

  8. Corrosion behavior of titanium boride composite coating fabricated on commercially pure titanium in Ringer's solution for bioimplant applications.

    PubMed

    Sivakumar, Bose; Singh, Raghuvir; Pathak, Lokesh Chandra

    2015-03-01

    The boriding of commercially pure titanium was performed at 850°C, 910°C, and 1050°C for varied soaking periods (1, 3 and 5h) to enhance the surface properties desirable for bioimplant applications. The coating developed was characterized for the evolution of phases, microstructure and morphology, microhardness, and consequent corrosion behavior in the Ringer's solution. Formation of the TiB2 layer at the outermost surface followed by the TiB whiskers across the borided CpTi is unveiled. Total thickness of the composite layer on the substrates borided at 850, 910, and 1050°C for 5h was found to be 19.1, 26.4, and 18.2μm respectively which includes <3μm thick TiB2 layer. The presence of TiB2 phase was attributed to the high hardness ~2968Hv15gf of the composite coating. The anodic polarization studies in the simulated body fluid unveiled a reduction in the pitting corrosion resistance after boriding the CpTi specimens. However, this value is >0.55VSCE (electrochemical potential in in-vivo physiological environment) and hence remains within the safe region. Both the untreated and borided CpTi specimens show two passive zones associated with different passivation current densities. Among the CpTi borided at various times and temperatures, a 3h treated shows better corrosion resistance. The corrosion of borided CpTi occurred through the dissolution of TiB2. PMID:25579920

  9. Corrosion behavior of titanium boride composite coating fabricated on commercially pure titanium in Ringer's solution for bioimplant applications.

    PubMed

    Sivakumar, Bose; Singh, Raghuvir; Pathak, Lokesh Chandra

    2015-03-01

    The boriding of commercially pure titanium was performed at 850°C, 910°C, and 1050°C for varied soaking periods (1, 3 and 5h) to enhance the surface properties desirable for bioimplant applications. The coating developed was characterized for the evolution of phases, microstructure and morphology, microhardness, and consequent corrosion behavior in the Ringer's solution. Formation of the TiB2 layer at the outermost surface followed by the TiB whiskers across the borided CpTi is unveiled. Total thickness of the composite layer on the substrates borided at 850, 910, and 1050°C for 5h was found to be 19.1, 26.4, and 18.2μm respectively which includes <3μm thick TiB2 layer. The presence of TiB2 phase was attributed to the high hardness ~2968Hv15gf of the composite coating. The anodic polarization studies in the simulated body fluid unveiled a reduction in the pitting corrosion resistance after boriding the CpTi specimens. However, this value is >0.55VSCE (electrochemical potential in in-vivo physiological environment) and hence remains within the safe region. Both the untreated and borided CpTi specimens show two passive zones associated with different passivation current densities. Among the CpTi borided at various times and temperatures, a 3h treated shows better corrosion resistance. The corrosion of borided CpTi occurred through the dissolution of TiB2.

  10. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOEpatents

    Curtis, Calvin J.; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S.; Nekuda, Jennifer A.

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  11. PREFACE: The 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008)

    NASA Astrophysics Data System (ADS)

    Tanaka, Takaho

    2009-07-01

    This volume of Journal of Physics: Conference Series contains invited and contributed peer-reviewed papers that were presented at the 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008), which was held on 7-12 September 2008, at Kunibiki Messe, Matsue, Japan. This triennial symposium has a half-century long history starting from the 1st meeting in 1959 at Asbury Park, New Jersey. We were very pleased to organize ISBB 2008, which gathered chemists, physicists, materials scientists as well as diamond and high-pressure researchers. This meeting had a strong background in the boron-related Japanese research history, which includes the discovery of superconductivity in MgB2 and development of Nd-Fe-B hard magnets and of YB66 soft X-ray monochromator. The scope of ISBB 2008 spans both basic and applied interdisciplinary research that is centered on boron, borides and related materials, and the collection of articles defines the state of the art in research on these materials. The topics are centered on: 1. Preparation of new materials (single crystals, thin films, nanostructures, ceramics, etc) under normal or extreme conditions. 2. Crystal structure and chemical bonding (new crystal structures, nonstoichiometry, defects, clusters, quantum-chemical calculations). 3. Physical and chemical properties (band structure, phonon spectra, superconductivity; optical, electrical, magnetic, emissive, mechanical properties; phase diagrams, thermodynamics, catalytic activity, etc) in a wide range of temperatures and pressures. 4. Applications and prospects (thermoelectric converters, composites, ceramics, coatings, etc) There were a few discoveries of new materials, such as nanomaterials, and developments in applications. Many contributions were related to 4f heavy Fermion systems of rare-earth borides. Exotic mechanisms of magnetism and Kondo effects have been discussed, which may indicate another direction of development of boride. Two special sessions

  12. Boride Zone Formation in Transient Liquid Phase Bonding of Pairings of Parent Superalloy Materials with Different Compositions and Grain Structures

    NASA Astrophysics Data System (ADS)

    Steuer, S.; Singer, R. F.

    2013-05-01

    Two nickel-base superalloys are joined via transient liquid phase (TLP) bonding with boron as the MPD. Boride formation is observed in the parent materials at some distance from the solid/liquid interface. The boron concentration profile over the joint is measured with glow discharge optical emission spectroscopy (GDOES). Boron concentration peaks are observed corresponding to the boride formation. Boron distribution is discussed on the basis of theoretical predictions in the literature. It is concluded that diffusion of another element is necessary to explain the results with the second element influencing the solubility of boron.

  13. Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

    DOEpatents

    Halverson, Danny C.; Landingham, Richard L.

    1988-01-01

    A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

  14. [Three cases of indium lung].

    PubMed

    Taguchi, Osamu; Chonan, Tatsuya

    2006-07-01

    The production of indium tin oxide (ITO) has been increasing during the past decade because of its use in liquid crystal and plasma display panels. Following the first report on lethal lung injury in a ITO worker in 2001, we began pulmonary check-ups for 115 workers in the plant in our capacity of industrial physicians of the plant. Hence, we report interstitial pulmonary disease in 3 workers who had engaged in wet-surface grinding of ITO for 8 to 12 years and had significant lung injuries. The serum indium level and serum concentration of KL-6 were significantly elevated in all 3 cases. One non-smoker case among them showed severe obstructive changes on spirometry and had an episode of repeated bilateral pneumothorax before and during the follow-up period. All 3 cases showed both interstitial and/or emphysematous changes on HRCT. It is suggested that inhaled indium compounds can cause a new and unique interstitial pulmonary disease.

  15. Amorphous nickel boride membrane on a platinum-nickel alloy surface for enhanced oxygen reduction reaction.

    PubMed

    He, Daping; Zhang, Libo; He, Dongsheng; Zhou, Gang; Lin, Yue; Deng, Zhaoxiang; Hong, Xun; Wu, Yuen; Chen, Chen; Li, Yadong

    2016-01-01

    The low activity of the oxygen reduction reaction in polymer electrolyte membrane fuel cells is a major barrier for electrocatalysis, and hence needs to be optimized. Tuning the surface electronic structure of platinum-based bimetallic alloys, a promising oxygen reduction reaction catalyst, plays a key role in controlling its interaction with reactants, and thus affects the efficiency. Here we report that a dealloying process can be utilized to experimentally fabricate the interface between dealloyed platinum-nickel alloy and amorphous nickel boride membrane. The coating membrane works as an electron acceptor to tune the surface electronic structure of the platinum-nickel catalyst, and this composite catalyst composed of crystalline platinum-nickel covered by amorphous nickel boride achieves a 27-times enhancement in mass activity relative to commercial platinum/carbon at 0.9 V for the oxygen reduction reaction performance. Moreover, this interactional effect between a crystalline surface and amorphous membrane can be readily generalized to facilitate the 3-times higher catalytic activity of commercial platinum/carbon. PMID:27503412

  16. Amorphous nickel boride membrane on a platinum–nickel alloy surface for enhanced oxygen reduction reaction

    PubMed Central

    He, Daping; Zhang, Libo; He, Dongsheng; Zhou, Gang; Lin, Yue; Deng, Zhaoxiang; Hong, Xun; Wu, Yuen; Chen, Chen; Li, Yadong

    2016-01-01

    The low activity of the oxygen reduction reaction in polymer electrolyte membrane fuel cells is a major barrier for electrocatalysis, and hence needs to be optimized. Tuning the surface electronic structure of platinum-based bimetallic alloys, a promising oxygen reduction reaction catalyst, plays a key role in controlling its interaction with reactants, and thus affects the efficiency. Here we report that a dealloying process can be utilized to experimentally fabricate the interface between dealloyed platinum–nickel alloy and amorphous nickel boride membrane. The coating membrane works as an electron acceptor to tune the surface electronic structure of the platinum–nickel catalyst, and this composite catalyst composed of crystalline platinum–nickel covered by amorphous nickel boride achieves a 27-times enhancement in mass activity relative to commercial platinum/carbon at 0.9 V for the oxygen reduction reaction performance. Moreover, this interactional effect between a crystalline surface and amorphous membrane can be readily generalized to facilitate the 3-times higher catalytic activity of commercial platinum/carbon. PMID:27503412

  17. Amorphous nickel boride membrane on a platinum-nickel alloy surface for enhanced oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    He, Daping; Zhang, Libo; He, Dongsheng; Zhou, Gang; Lin, Yue; Deng, Zhaoxiang; Hong, Xun; Wu, Yuen; Chen, Chen; Li, Yadong

    2016-08-01

    The low activity of the oxygen reduction reaction in polymer electrolyte membrane fuel cells is a major barrier for electrocatalysis, and hence needs to be optimized. Tuning the surface electronic structure of platinum-based bimetallic alloys, a promising oxygen reduction reaction catalyst, plays a key role in controlling its interaction with reactants, and thus affects the efficiency. Here we report that a dealloying process can be utilized to experimentally fabricate the interface between dealloyed platinum-nickel alloy and amorphous nickel boride membrane. The coating membrane works as an electron acceptor to tune the surface electronic structure of the platinum-nickel catalyst, and this composite catalyst composed of crystalline platinum-nickel covered by amorphous nickel boride achieves a 27-times enhancement in mass activity relative to commercial platinum/carbon at 0.9 V for the oxygen reduction reaction performance. Moreover, this interactional effect between a crystalline surface and amorphous membrane can be readily generalized to facilitate the 3-times higher catalytic activity of commercial platinum/carbon.

  18. Investigation of composition and chemical state of elements in iron boride by the method of X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Alyoshin, V. G.; Kharlamov, A. I.; Prokopenko, V. M.

    1981-06-01

    The composition and chemical state of iron and boron in the surface layer of iron boride under different kinds of pretreatment of samples have been investigated by the method of X-ray photo-electron spectroscopy. It has been found that in the initial sample there is oxygen chemically combined with iron and boron atoms. Upon heating (450°C) in hydrogen, in argon, and in vacuo there occurs removal of oxygen only from iron atoms (no pure iron was found to be formed). Boron oxidizes and there probably appears a new surface combination of boron with oxygen in which the bonding energy of 1 s electrons is higher than that in B 2O 3. Treatment of the iron boride surface with argon ions and with protons ensures uniform removal of oxygen from iron and boron atoms. It has been found that thermal treatment of iron boride leads to depletion of iron atoms from the sample surface layer, and pickling with argon ions and with protons leads to strong enrichment. Iron boride samples subjected to Ar + and H + bombardment tend to undergo significant oxidation when subsequently exposed to air at room temperature.

  19. Process for Patterning Indium for Bump Bonding

    NASA Technical Reports Server (NTRS)

    Denis, Kevin

    2012-01-01

    An innovation was created for the Cosmology Large Angular Scale Surveyor for integration of low-temperature detector chips with a silicon backshort and a silicon photonic choke through flipchip bonding. Indium bumps are typically patterned using liftoff processes, which require thick resist. In some applications, it is necessary to locate the bumps close to high-aspect-ratio structures such as wafer through-holes. In those cases, liftoff processes are challenging, and require complicated and time-consuming spray coating technology if the high-aspect-ratio structures are delineated prior to the indium bump process. Alternatively, processing the indium bumps first is limited by compatibility of the indium with subsequent processing. The present invention allows for locating bumps arbitrarily close to multiple-level high-aspect-ratio structures, and for indium bumps to be formed without liftoff resist. The process uses the poor step coverage of indium deposited on a silicon wafer that has been previously etched to delineate the location of the indium bumps. The silicon pattern can be processed through standard lithography prior to adding the high-aspect-ratio structures. Typically, high-aspectratio structures require a thick resist layer so this layer can easily cover the silicon topography. For multiple levels of topography, the silicon can be easily conformally coated through standard processes. A blanket layer of indium is then deposited onto the full wafer; bump bonding only occurs at the high points of the topography.

  20. Valence fluctuations of europium in the boride Eu4Pd(29+x)B8.

    PubMed

    Gumeniuk, Roman; Schnelle, Walter; Ahmida, Mahmoud A; Abd-Elmeguid, Mohsen M; Kvashnina, Kristina O; Tsirlin, Alexander A; Leithe-Jasper, Andreas; Geibel, Christoph

    2016-03-23

    We synthesized a high-quality sample of the boride Eu4Pd(29+x)B8 (x  =  0.76) and studied its structural and physical properties. Its tetragonal structure was solved by direct methods and confirmed to belong to the Eu4Pd29B8 type. All studied physical properties indicate a valence fluctuating Eu state, with a valence decreasing continuously from about 2.9 at 5 K to 2.7 at 300 K. Maxima in the T dependence of the susceptibility and thermopower at around 135 K and 120 K, respectively, indicate a valence fluctuation energy scale on the order of 300 K. Analysis of the magnetic susceptibility evidences some inconsistencies when using the ionic interconfigurational fluctuation (ICF) model, thus suggesting a stronger relevance of hybridization between 4f and valence electrons compared to standard valence-fluctuating Eu systems.

  1. Valence fluctuations of europium in the boride Eu4Pd29+x B8

    NASA Astrophysics Data System (ADS)

    Gumeniuk, Roman; Schnelle, Walter; Ahmida, Mahmoud A.; Abd-Elmeguid, Mohsen M.; Kvashnina, Kristina O.; Tsirlin, Alexander A.; Leithe-Jasper, Andreas; Geibel, Christoph

    2016-03-01

    We synthesized a high-quality sample of the boride Eu4Pd29+x B8 (x  =  0.76) and studied its structural and physical properties. Its tetragonal structure was solved by direct methods and confirmed to belong to the Eu4Pd29B8 type. All studied physical properties indicate a valence fluctuating Eu state, with a valence decreasing continuously from about 2.9 at 5 K to 2.7 at 300 K. Maxima in the T dependence of the susceptibility and thermopower at around 135 K and 120 K, respectively, indicate a valence fluctuation energy scale on the order of 300 K. Analysis of the magnetic susceptibility evidences some inconsistencies when using the ionic interconfigurational fluctuation (ICF) model, thus suggesting a stronger relevance of hybridization between 4f and valence electrons compared to standard valence-fluctuating Eu systems.

  2. Identification of delamination failure of boride layer on common Cr-based steels

    NASA Astrophysics Data System (ADS)

    Taktak, Sukru; Tasgetiren, Suleyman

    2006-10-01

    Adhesion is an important aspect in the reliability of coated components. With low-adhesion of interfaces, different crack paths may develop depending on the local stress field at the interface and the fracture toughness of the coating, substrate, and interface. In the current study, an attempt has been made to identify the delamination failure of coated Cr-based steels by boronizing. For this reason, two commonly used steels (AISI H13, AISI 304) are considered. The steels contain 5.3 and 18.3 wt.% Cr, respectively. Boriding treatment is carried out in a slurry salt bath consisting of borax, boric acid, and ferrosilicon at a temperature range of 800 950 °C for 3, 5, and 7 h. The general properties of the boron coating are obtained by mechanical and metallographic characterization tests. For identification of coating layer failure, some fracture toughness tests and the Daimler-Benz Rockwell-C adhesion test are used.

  3. Valence fluctuations of europium in the boride Eu4Pd(29+x)B8.

    PubMed

    Gumeniuk, Roman; Schnelle, Walter; Ahmida, Mahmoud A; Abd-Elmeguid, Mohsen M; Kvashnina, Kristina O; Tsirlin, Alexander A; Leithe-Jasper, Andreas; Geibel, Christoph

    2016-03-23

    We synthesized a high-quality sample of the boride Eu4Pd(29+x)B8 (x  =  0.76) and studied its structural and physical properties. Its tetragonal structure was solved by direct methods and confirmed to belong to the Eu4Pd29B8 type. All studied physical properties indicate a valence fluctuating Eu state, with a valence decreasing continuously from about 2.9 at 5 K to 2.7 at 300 K. Maxima in the T dependence of the susceptibility and thermopower at around 135 K and 120 K, respectively, indicate a valence fluctuation energy scale on the order of 300 K. Analysis of the magnetic susceptibility evidences some inconsistencies when using the ionic interconfigurational fluctuation (ICF) model, thus suggesting a stronger relevance of hybridization between 4f and valence electrons compared to standard valence-fluctuating Eu systems. PMID:26895077

  4. Physics Among Lightweights: Boride Superconductors (Superconductivity in MgB2)

    SciTech Connect

    Canfield, Paul C.

    2001-06-13

    Recently there has been a great deal of excitement about the intermetallic superconductor MgB2. MgB2 has a superconducting transition temperature Tc {approx} 40 K, can be synthesized as single phase powders and wire segments, has a remarkably low normal state resistivity, and manifests a promising critical current density in the superconducting state. In this colloquium I will review recent discoveries associated with intermetallic borides and try to show how MgB2 fits into the basic gestalt of intermetallic compounds. In addition I will try to explain why anybody should care about this and why some physicists find the topic of novel states in intermetallic compounds to be an extremely interesting research topic.

  5. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  6. Refractory Boride Formation and Microstructure Evolution during Solidification of Titanium-Boron and Titanium Aluminum-Boron Alloys

    NASA Astrophysics Data System (ADS)

    Hyman, Mark Edward

    1990-01-01

    gamma-TiAl alloys targeted for use as a structural material in advanced aerospace applications lack adequate creep strength at high temperatures. Incorporation of hard refractory second phase particles (e.g. TiB _2) exhibiting large aspect ratios (i.e. needles) can increase creep strength by constraining the plastic flow of the matrix during high temperature service. Matrix microstructure evolution and refractory boride formation in binary Ti-B and Ti-(25-52) at% Al and <= ~ 6 at% B alloys during conventional solidification is examined. The effects of rapid solidification processing (RSP) on microstructure evolution and boride morphology in ternary alloys is examined in electromagnetically levitated droplets processed via gas and splat quenching. A liquidus projection near the Ti-Al edge binary is deduced from a combination of computer modelling efforts and experimental evidence. The primary fields of crystallization sequentially traversed with increasing Al content starting from the Ti-B edge binary are: TiB to Ti_3B_4 to TiB_2 and beta to alpha to gamma for B-rich (i.e. ~5 at% B) and dilute alloys, respectively. A monovariant line of the type, L to M + TiB_2 (where M = beta, alpha , and gamma) was found to run slightly below the ~1 at% B isoconcentration line near the equiatomic TiAl composition. Matrix microstructure evolution and boride formation in these ternary alloys can be explained using the proposed liquidus projection for the Ti-Al-B system. TiB_2 forms in Ti-Al-B alloys (i.e. >= 35 at% Al) with various morphologies--blocky, plate/needle and flakes--and are extensively characterized by TEM and SEM. Their growth mechanisms leading to their various morphologies is discussed. Aside from the boride phases formed, the solidification microstructures of the Ti-Al -B alloys of interest showed essentially the same constituent phases as those of binary Ti-Al alloys of similar composition. Characterization of supercooled ternary droplets dilute in B (i.e. <=1 at% B

  7. Distribution of indium ions in indium substituted Mn-Zn ferrites

    NASA Astrophysics Data System (ADS)

    Rao, K. H.; Mendiratta, R. G.

    1983-04-01

    The variations in dc resistivity and Mossbauer line intensities for various dopant concentrations of indium in a manganese-zinc ferrite have been investigated to analyze the site occupancy of indium ions. The indium ions are observed to occupy both tetrahedral and octahedral sites throughout the whole range of concentration studied. The picture proposed on the basis of resistivity measurements has been confirmed by Mossbauer data.

  8. Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

    NASA Astrophysics Data System (ADS)

    Ballinger, Jared

    Diamond thin films have promising applications in numerous fields due to the extreme properties of diamonds in conjunction with the surface enhancement of thin films. Biomedical applications are numerous including temporary implants and various dental and surgical instruments. The unique combination of properties offered by nanostructured diamond films that make it such an attractive surface coating include extreme hardness, low obtainable surface roughness, excellent thermal conductivity, and chemical inertness. Regrettably, numerous problems exist when attempting to coat stainless steel with diamond generating a readily delaminated film: outward diffusion of iron to the surface, inward diffusion of carbon limiting necessary surface carbon precursor, and the mismatch between the coefficients of thermal expansion yielding substantial residual stress. While some exotic methods have been attempted to overcome these hindrances, the most common approach is the use of an intermediate layer between the stainless steel substrate and the diamond thin film. In this research, both 316 stainless steel disks and 440C stainless steel ball bearings were tested with interlayers including discrete coatings and graded, diffusion-based surface enhancements. Titanium nitride and thermochemical diffusion boride interlayers were both examined for their effectiveness at allowing for the growth of continuous and adherent diamond films. Titanium nitride interlayers were deposited by cathodic arc vacuum deposition on 440C bearings. Lower temperature diamond processing resulted in improved surface coverage after cooling, but ultimately, both continuity and adhesion of the nanostructured diamond films were unacceptable. The ability to grow quality diamond films on TiN interlayers is in agreement with previous work on iron and low alloy steel substrates, and the similarly seen inadequate adhesion strength is partially a consequence of the lacking establishment of an interfacial carbide phase

  9. Pt-B System Revisited: Pt2B, a New Structure Type of Binary Borides. Ternary WAl12-Type Derivative Borides.

    PubMed

    Sologub, Oksana; Salamakha, Leonid; Rogl, Peter; Stöger, Berthold; Bauer, Ernst; Bernardi, Johannes; Giester, Gerald; Waas, Monika; Svagera, Robert

    2015-11-16

    On the basis of a detailed study applying X-ray single-crystal and powder diffraction, differential scanning calorimetry, and scanning electron microscopy analysis, it was possible to resolve existing uncertainties in the Pt-rich section (≥65 atom % Pt) of the binary Pt-B phase diagram above 600 °C. The formation of a unique structure has been observed for Pt2B [X-ray single-crystal data: space group C2/m, a = 1.62717(11) nm, b = 0.32788(2) nm, c = 0.44200(3) nm, β = 104.401(4)°, RF2 = 0.030]. Within the homogeneity range of "Pt3B", X-ray powder diffraction phase analysis prompted two structural modifications as a function of temperature. The crystal structure of "hT-Pt3B" complies with the hitherto reported structure of anti-MoS2 [space group P63/mmc, a = 0.279377(2) nm, c = 1.04895(1) nm, RF = 0.075, RI = 0.090]. The structure of the new "[Formula: see text]T-Pt3B" is still unknown. The formation of previously reported Pt∼4B has not been confirmed from binary samples. Exploration of the Pt-rich section of the Pt-Cu-B system at 600 °C revealed a new ternary compound, Pt12CuB6-y [X-ray single-crystal data: space group Im3̅, a = 0.75790(2) nm, y = 3, RF2 = 0.0129], which exhibits the filled WAl12-type structure accommodating boron in the interstitial trigonal-prismatic site 12e. The isotypic platinum-aluminum-boride was synthesized and studied. The solubility of copper in binary platinum borides has been found to attain ∼7 atom % Cu for Pt2B but to be insignificant for "[Formula: see text]T-Pt3B". The architecture of the new Pt2B structure combines puckered layers of boron-filled and empty [Pt6] octahedra (anti-CaCl2-type fragment) alternating along the x axis with a double layer of boron-semifilled [Pt6] trigonal prisms interbedded with a layer of empty tetrahedra and tetragonal pyramids (B-deficient α-T[Formula: see text]I fragment). Assuming boron vacancies ordering (space group R3), the Pt12CuB6-y structure exhibits serpentine-like columns of edge

  10. Pt-B System Revisited: Pt2B, a New Structure Type of Binary Borides. Ternary WAl12-Type Derivative Borides.

    PubMed

    Sologub, Oksana; Salamakha, Leonid; Rogl, Peter; Stöger, Berthold; Bauer, Ernst; Bernardi, Johannes; Giester, Gerald; Waas, Monika; Svagera, Robert

    2015-11-16

    On the basis of a detailed study applying X-ray single-crystal and powder diffraction, differential scanning calorimetry, and scanning electron microscopy analysis, it was possible to resolve existing uncertainties in the Pt-rich section (≥65 atom % Pt) of the binary Pt-B phase diagram above 600 °C. The formation of a unique structure has been observed for Pt2B [X-ray single-crystal data: space group C2/m, a = 1.62717(11) nm, b = 0.32788(2) nm, c = 0.44200(3) nm, β = 104.401(4)°, RF2 = 0.030]. Within the homogeneity range of "Pt3B", X-ray powder diffraction phase analysis prompted two structural modifications as a function of temperature. The crystal structure of "hT-Pt3B" complies with the hitherto reported structure of anti-MoS2 [space group P63/mmc, a = 0.279377(2) nm, c = 1.04895(1) nm, RF = 0.075, RI = 0.090]. The structure of the new "[Formula: see text]T-Pt3B" is still unknown. The formation of previously reported Pt∼4B has not been confirmed from binary samples. Exploration of the Pt-rich section of the Pt-Cu-B system at 600 °C revealed a new ternary compound, Pt12CuB6-y [X-ray single-crystal data: space group Im3̅, a = 0.75790(2) nm, y = 3, RF2 = 0.0129], which exhibits the filled WAl12-type structure accommodating boron in the interstitial trigonal-prismatic site 12e. The isotypic platinum-aluminum-boride was synthesized and studied. The solubility of copper in binary platinum borides has been found to attain ∼7 atom % Cu for Pt2B but to be insignificant for "[Formula: see text]T-Pt3B". The architecture of the new Pt2B structure combines puckered layers of boron-filled and empty [Pt6] octahedra (anti-CaCl2-type fragment) alternating along the x axis with a double layer of boron-semifilled [Pt6] trigonal prisms interbedded with a layer of empty tetrahedra and tetragonal pyramids (B-deficient α-T[Formula: see text]I fragment). Assuming boron vacancies ordering (space group R3), the Pt12CuB6-y structure exhibits serpentine-like columns of edge

  11. Mineral resource of the month: indium

    USGS Publications Warehouse

    Tolcin, Amy C.

    2011-01-01

    Geologically, the occurrence of indium minerals is rare. The element most often occurs as a sulfide inclusion or substitutes in other base-metal minerals, including cassiterite, chalcopyrite, sphalerite and stannite. Indium’s abundance in the crust is estimated to be 0.05 parts per million, which makes it more abundant than silver, but it is so widely disseminated that it does not occur in high enough concentrations to form mineable deposits. Therefore, indium is most often recovered from byproduct residues produced during the refining of lead and zinc. But only about one-quarter of the indium mined worldwide is refined into metal, as many indium-bearing concentrates are sent to refineries that do not have the capability of recovering the metal.

  12. Synthesis and characterization of nitrogen-phosphorus-based fire retardants modified by boride/propanetriol flyeidyl ether complex

    NASA Astrophysics Data System (ADS)

    Kang, Haijiao; Ma, Linrong; Zhang, Shifeng; Li, Jianzhang

    2015-07-01

    A Boride/propanetriol glyeidyl ether (B/PTGE) complex was employed to intensify the fire resistance capabilities of nitrogen-phosphorus (NP) fire retardants by reacting with phosphoric acid and urea to yield nitrogen-phosphorus-boron-PTGE fire retardants. The effects of NPB-PTGE fire retardants on wooden properties were characterized by limit oxygen index (LOI), cone calorimetry, X-ray Diffraction (XRD) and scanning electron microscopy (SEM). The results depict that the fire resistance of the B/PTGE complex modified by NP-based fire retardants was improved significantly. The PTGE was at 10% boride at 2%, and the treated wood has the LOI of 52%, which is 11.46% higher compared with woods treated with NP fire retardant.

  13. Pre-irradiation spatial distribution and stability of boride particles in rapidly solidified boron-doped stainless steels

    SciTech Connect

    Kanani, N.; Arnberg, L.; Harling, O.K.

    1981-01-01

    The time temperature behavior of boride particles has been studied in rapidly solidified ultra low carbon and nitrogen modified 316 stainless steel with 0.088% boron and 0.45% zirconium. The results show that the as-splat-cooled specimens exhibit precipitates at the grain boundaries and triple junctions. For temperatures up to about 750/sup 0/C no significant microstructural changes occur for short heat treatment times. In the temperature range of 750 to 950/sup 0/C, however, particles typically 100 to 500 A in diameter containing Zr and B are formed within the grains. Higher temperatures enhance the formation of such particles and give rise to particle networks. The results show that a fine and uniform distribution of the boride particles almost exclusively within the grains can be achieved if proper annealing conditions are chosen. This type of distribution is an important requirement for the homogeneous production of helium during neutron irradiation in fast reactors.

  14. Structural and mechanical properties of transition metal borides Nb2MB2 (M=Tc, Ru, and Os) under pressure

    NASA Astrophysics Data System (ADS)

    Li, Xiaofeng; Yan, Haiyan; Wei, Qun

    2016-10-01

    First-principle total energy calculations are employed to provide a fundamental understanding of the structural, mechanical, and electronic properties of transition metal borides Nb2MB2 (M=Tc, Ru, and Os) within the tetragonal superstructure P4/mnc structure. The mechanically and dynamically stabilities of three borides have been demonstrated by the elastic constants and phonons calculations under pressure. Among these three compounds, Nb2TcB2 exhibits the biggest bulk and Young's modulus, smallest Poission's ratio, and highest harness. Density of states of them revealed that the strong B-B, Nb-B and M-B covalent bonds are major driving forces for their high bulk and shear moduli as well as small Poisson's ratio.

  15. Indium Single-Ion Frequency Standard

    NASA Technical Reports Server (NTRS)

    Nagourney, Warren

    2001-01-01

    A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

  16. Pressure-induced decomposition of indium hydroxide.

    PubMed

    Gurlo, Aleksander; Dzivenko, Dmytro; Andrade, Miria; Riedel, Ralf; Lauterbach, Stefan; Kleebe, Hans-Joachim

    2010-09-15

    A static pressure-induced decomposition of indium hydroxide into metallic indium that takes place at ambient temperature is reported. The lattice parameter of c-In(OH)(3) decreased upon compression from 7.977(2) to approximately 7.45 A at 34 GPa, corresponding to a decrease in specific volume of approximately 18%. Fitting the second-order Birch-Murnaghan equation of state to the obtained compression data gave a bulk modulus of 99 +/- 3 GPa for c-In(OH)(3). The c-In(OH)(3) crystals with a size of approximately 100 nm are comminuted upon compression, as indicated by the grain-size reduction reflected in broadening of the diffraction reflections and the appearance of smaller (approximately 5 nm) incoherently oriented domains in TEM. The rapid decompression of compressed c-In(OH)(3) leads to partial decomposition of indium hydroxide into metallic indium, mainly as a result of localized stress gradients caused by relaxation of the highly disordered indium sublattice in indium hydroxide. This partial decomposition of indium hydroxide into metallic indium is irreversible, as confirmed by angle-dispersive X-ray diffraction, transmission electron microscopy imaging, Raman scattering, and FTIR spectroscopy. Recovered c-In(OH)(3) samples become completely black and nontransparent and show typical features of metals, i.e., a falling absorption in the 100-250 cm(-1) region accompanied by a featureless spectrum in the 250-2500 cm(-1) region in the Raman spectrum and Drude-like absorption of free electrons in the region of 4000-8000 cm(-1) in the FTIR spectrum. These features were not observed in the initial c-In(OH)(3), which is a typical white wide-band-gap semiconductor.

  17. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal...

  18. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal...

  19. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary indium... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal...

  20. Thermal Stability of Chelated Indium Activable Tracers

    SciTech Connect

    Chrysikopoulos, Costas; Kruger, Paul

    1986-01-21

    The thermal stability of indium tracer chelated with organic ligands ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA) was measured for reservoir temperatures of 150, 200, and 240 C. Measurements of the soluble indium concentration was made as a function of time by neutron activation analysis. From the data, approximate thermal decomposition rates were estimated. At 150 C, both chelated tracers were stable over the experimental period of 20 days. At 200 C, the InEDTA concentration remained constant for 16 days, after which the thermal decomposition occurred at a measured rate constant of k = 0.09 d{sup -1}. The thermal decomposition of InNTA at 200 C showed a first order reaction with a measured rate constant of k = 0.16 d{sup -1}. At 240 C, both indium chelated tracers showed rapid decomposition with rate constants greater than 1.8 d{sup -1}. The data indicate that for geothermal reservoir with temperatures up to about 200 C, indium chelated tracers can be used effectively for transit times of at least 20 days. These experiments were run without reservoir rock media, and do not account for concomitant loss of indium tracer by adsorption processes.

  1. Preliminary investigation of zirconium boride ceramals for gas-turbine blade applications

    NASA Technical Reports Server (NTRS)

    Hoffman, Charles A

    1953-01-01

    Zirconium boride ZrB2 ceramals were investigated for possible gas-turbine-blade application. Included in the study were thermal shock evaluations of disks, preliminary turbine-blade operation, and observations of oxidation resistance. Thermal shock disks of the following three compositions were studied: (a) 97.5 percent ZrB2 plus 2.5 percent B by weight; (b) 92.5 percent ZrB2 plus 7.5 percent B by weight; and (c) 100 percent ZrB2. Thermal shock disks were quenched from temperatures of 1800 degrees, 2000 degrees, 2200 degrees, and 2400 degrees F. The life of turbine blades containing 93 percent ZrB2 plus 7 percent B by weight was determined in gas-turbine tests. The blades were run at approximately 1600 degrees F and 15,000 to 26,000 rpm. The thermal shock resistance of the 97.5 percent ZrB2 plus 2.5 percent boron ceramals compares favorably with that of TiC plus Co and TiC plus Ni ceramals. Oxidation of the disks during the thermal shock evaluation was slight for the comparatively short time (8.3 hr) up through 2000 degrees F. Oxidation of a specimen was severe, however, after 100 hours at 2000 degrees F. The turbine blade performance evaluation of the 93 percent ZrB2 plus 7 percent B composition was preliminary in scope ; no conclusions can be drawn.

  2. Joining of zirconium boride based refractory ceramics to Ti6Al4V

    NASA Astrophysics Data System (ADS)

    Muolo, Maria Luigia; Ferrera, Elena; Morbelli, Luisa; Zanotti, Claudio; Passerone, Alberto

    2003-09-01

    The exploitation of the peculiar characteristics of ceramic refractory materials in extreme conditions (as for Thermal Protection Systems - TPS) often depends to a great extent on the ability to join different ceramics one to the other and to special metallic alloys. Joints may be achieved in a number of ways, but principally are made by either solid phase or liquid phase transformations (brazing). Brazed joints are difficult to realise in the presence of ceramic materials, due to the fact that they are not wet, in general, by liquid metals. This paper presents experimental results on the wettability characteristics of zirconium boride based materials (with Si3N4, Ni etc.) by an AgZr alloy, the microstructures and thermal tests of brazed joints with the special alloy Ti6Al4V. The wetting data will be examined in terms of interfacial characteristics and in terms of the kinetics of spreading. Thermal tests and models will be devoted to evaluate and measure the thermal insulation capacity of the ceramic layers in order to determine the optimal thickness as a function of the foreseen outer surface temperature.

  3. Reduction of boride enhanced diffusion in MeV-implanted silicon

    NASA Astrophysics Data System (ADS)

    Shao, Lin; Thompson, Phillip E.; Bleiler, Roger J.; Baumann, Scott; Wang, Xuemei; Chen, Hui; Liu, Jiarui; Chu, Wei-Kan

    2002-11-01

    We demonstrated that implantation of MeV Si ions into a Si substrate can suppress boride-enhanced diffusion (BED) normally associated with a high B concentration layer. In this study, a molecular-beam-epitaxy grown Si layer with a B concentration of 1021/cm3 over a 10 nm region capped with 100 nm Si was used as a source of BED. A sequence of four B delta-doped layers with 100 nm Si spacers was grown prior to the source layer to monitor the diffusion. Half of the sample was implanted with 1 MeV Si ions at a dose of 1016/cm2, followed by annealing at 800, 900, and 1000 °C for different periods of time. For control samples without the MeV Si implant, BED was observed with enhancements of around 40 while the MeV Si-implanted sample showed a reduced, yet nonvanishing, BED with an enhancement of around 8 after annealing at 800 °C for 1 h. Both BED and suppressed BED with MeV implant show transient behavior with decay after annealing for long periods of time. The effect of high energy implant on B diffusion from surface deposited B layer was also discussed.

  4. Indium: bringing liquid-crystal displays into focus

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-01-01

    Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

  5. Indium: bringing liquid-crystal displays into focus

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-07-30

    Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

  6. Indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1982-12-28

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  7. Indium-111 leukocyte scanning and fracture healing

    SciTech Connect

    Mead, L.P.; Scott, A.C.; Bondurant, F.J.; Browner, B.D. )

    1990-01-01

    This study was undertaken to determine the specificity of indium-111 leukocyte scans for osteomyelitis when fractures are present. Midshaft tibial osteotomies were performed in 14 New Zealand white rabbits, seven of which were infected postoperatively with Staphylococcus aureus per Norden's protocol. All 14 rabbits were scanned following injection with 75 microCi of indium 111 at 72 h after osteotomy and at weekly intervals for 4 weeks. Before the rabbits were killed, the fracture sites were cultured to document the presence or absence of infection. The results of all infected osteotomy sites were positive, whereas no positive scans were found in the noninfected osteotomies. We concluded from this study that uncomplicated fracture healing does not result in a positive indium-111 leukocyte scan.

  8. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  9. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  10. 40 CFR 721.10391 - Copper gallium indium selenide.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN...

  11. Transport in indium-decorated graphene

    NASA Astrophysics Data System (ADS)

    Chandni, U.; Henriksen, Erik A.; Eisenstein, J. P.

    2015-06-01

    The electronic-transport properties of single-layer graphene that has a dilute coating of indium adatoms have been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low-field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.

  12. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael; Sears, Jasmine; Zandbergen, Sander; Nader, Nima; Keiffer, Patrick; Hendrickson, Joshua; Arnoult, Alexandre; Khitrova, Galina

    2015-09-01

    We describe molecular beam epitaxy (MBE) growth conditions for self-assembled indium nanostructures, or islands, which allow for the tuning of the density and size of the indium nanostructures. How the plasmonic resonance of indium nanostructures is affected by the island density, size, distribution in sizes, and indium purity of the nanostructures is explored. These self-assembled nanostructures provide a platform for integration of resonant and non-resonant plasmonic structures within a few nm of quantum wells (QWs) or quantum dots (QDs) in a single process. A 4× increase in peak photoluminescence intensity is demonstrated for near-surface QDs resonantly coupled to indium nanostructures.

  13. Interstitial pulmonary disorders in indium-processing workers.

    PubMed

    Chonan, T; Taguchi, O; Omae, K

    2007-02-01

    The production of indium-tin oxide has increased, owing to the increased manufacture of liquid-crystal panels. It has been reported that interstitial pneumonia occurred in two indium-processing workers; therefore, the present study aimed to evaluate whether interstitial pulmonary disorders were prevalent among indium workers. The study was carried out in 108 male workers in the indium plant where the two interstitial pneumonia patients mentioned above were employed, and included high-resolution computed tomography (HRCT) of the lungs, pulmonary function tests and analysis of serum sialylated carbohydrate antigen KL-6 and the serum indium concentration. Significant interstitial changes were observed in 23 indium workers on HRCT and serum KL-6 was abnormally high (>500 U x mL(-1)) in 40 workers. Workers with serum indium concentrations in the highest quartile had significantly longer exposure periods, greater HRCT changes, lower diffusing capacity of the lung for carbon monoxide and higher KL-6 levels compared with those in the lowest quartile. The serum indium concentration was positively correlated with the KL-6 level and with the degree of HRCT changes. In conclusion, the results of the present study indicated that serum KL-6 and high-resolution computed tomography abnormalities were prevalent among indium workers and that these abnormalities increased with the indium burden, suggesting that inhaled indium could be a potential cause of occupational lung disease.

  14. Sinterless Formation Of Contacts On Indium Phosphide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  15. Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide

    NASA Astrophysics Data System (ADS)

    Palimar, Sowmya; Bangera, Kasturi V.; Shivakumar, G. K.

    2013-12-01

    The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 Ω-1 cm-1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 Ω-1 cm-1, whereas the conductivity of indium oxide-doped films is increased up to 3.5 × 103 Ω-1 cm-1. Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping.

  16. The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants

    NASA Astrophysics Data System (ADS)

    Detweiler, Zachary M.; Wulfsberg, Steven M.; Frith, Matthew G.; Bocarsly, Andrew B.; Bernasek, Steven L.

    2016-06-01

    Metallic indium and its oxides are useful in electronics applications, in transparent conducting electrodes, as well as in electrocatalytic applications. In order to understand more fully the speciation of the indium and oxygen composition of the indium surface exposed to atmospheric oxidants, XPS, HREELS, and TPD were used to study the indium surface exposed to water, oxygen, and carbon dioxide. Clean In and authentic samples of In2O3 and In(OH)3 were examined with XPS to provide standard spectra. Indium was exposed to O2 and H2O, and the ratio of O2 - to OH- in the O1s XPS region was used to monitor oxidation and speciation of the surface. HREELS and TPD indicate that water dissociates on the indium surface even at low temperature, and that In2O3 forms at higher temperatures. Initially, OH- is the major species at the surface. Pure In2O3 is also OH- terminated following water exposure. Ambient pressure XPS studies of water exposure to these surfaces suggest that high water pressures tend to passivate the surface, inhibiting extensive oxide formation.

  17. Slater-Pauling behavior within quaternary intermetallic borides of the Ti 3Co 5B 2 structure-type

    NASA Astrophysics Data System (ADS)

    Burghaus, Jens; Dronskowski, Richard; Miller, Gordon J.

    2009-10-01

    First-principles, density-functional studies of several intermetallic borides of the general type M2M'Ru 5-nRh nB 2 ( n=0-5; M=Sc, Ti, Nb; M'=Fe, Co) show that the variation in saturation magnetic moment with valence-electron count follows a Slater-Pauling curve, with a maximum moment occurring typically at 66 valence electrons. The magnetic moments in these compounds occur primarily from the 3 d electrons of the magnetically active M' sites, with some contribution from the Ru/Rh sites via magnetic polarization. Electronic DOS curves reveal that a rigid-band approach is a reasonable approximation for the estimation of saturation moments and the analysis of orbital interactions in this family of complex borides. COHP analyses of the M'- M' orbital interactions indicate optimized interactions in the minority spin states for Co-containing phases, but strong bonding interactions remaining in Fe-containing phases.

  18. The Wyckoff positional order and polyhedral intergrowth in the M3B2- and M5B3-type boride precipitated in the Ni-based superalloys.

    PubMed

    Hu, X B; Zhu, Y L; Sheng, N C; Ma, X L

    2014-01-01

    Ni-based single superalloys play a crucial role in the hottest parts of jet engines. However, due to the complex geometry and macro-segregation during the solidification process, the cast defect such as stray grains is inevitable. Therefore, the transient liquid phase (TLP) bonding which can join several small single crystalline castings together is gradually believed to be an effective method for improving the yields of production of the complex components. The melting point depressant element B is always added into the interlayer filler material. Consequently, borides including the M3B2 and M5B3 phase usually precipitate during the TLP bonding process. So a comprehensive knowledge of the fine structural characteristics of the borides is very critical for an accurate evaluation of the TLP bonding process. In this work, by means of the aberration-corrected transmission electron microscopy, we show, at an atomic scale, the Wyckoff positional order phenomenon of the metal atoms in the unit cell of M3B2- and M5B3-type boride. Meanwhile, the defect along the (001) plane of the above two types of boride are determined to be the polyhedral intergrowth with complex configurations. PMID:25482386

  19. Surface decoration through electrostatic interaction leading to enhanced reactivity: Low temperature synthesis of nanostructured chromium borides (CrB and CrB{sub 2})

    SciTech Connect

    Menaka,; Kumar, Bharat; Kumar, Sandeep; Ganguli, A.K.

    2013-04-15

    The present study describes a novel low temperature route at ambient pressure for the synthesis of nanocrystalline chromium borides (CrB and CrB{sub 2}) without using any flux or additives. The favorable and intimate mixing of nanoparticles of chromium acetate (Cr source) and boron forms an active chromium–boron precursor which decomposes at much lower temperature (400 °C) to form CrB (which is ∼1000 °C less than the known ambient pressure synthesis). The chromium acetate nanoparticles (∼5 nm) decorate the larger boron particles (150–200 nm) due to electrostatic interactions resulting from opposing surface charges of boron (zeta potential:+48.101 mV) and chromium acetate (zeta potential:−4.021 mV) in ethanolic medium and is evident in the TEM micrographs. The above method leads to the formation of pure CrB film like structure at 400 °C and nanospheres (40–60 nm) at 600 °C. Also, chromium diboride (CrB{sub 2}) nanoparticles (25 nm) could be obtained at 1000 °C. - Graphical abstract: Variation of surface charge of reactants, precursor and the products, chromium borides (CrB and CrB{sub 2}). Highlights: ► Novel borothermal reduction process for synthesis of chromium boride. ► Significant lowering of reaction temperature to obtain nanocrystalline chromium boride. ► Enhanced reactivity due to appropriate surface interactions.

  20. The Wyckoff positional order and polyhedral intergrowth in the M3B2- and M5B3-type boride precipitated in the Ni-based superalloys.

    PubMed

    Hu, X B; Zhu, Y L; Sheng, N C; Ma, X L

    2014-12-08

    Ni-based single superalloys play a crucial role in the hottest parts of jet engines. However, due to the complex geometry and macro-segregation during the solidification process, the cast defect such as stray grains is inevitable. Therefore, the transient liquid phase (TLP) bonding which can join several small single crystalline castings together is gradually believed to be an effective method for improving the yields of production of the complex components. The melting point depressant element B is always added into the interlayer filler material. Consequently, borides including the M3B2 and M5B3 phase usually precipitate during the TLP bonding process. So a comprehensive knowledge of the fine structural characteristics of the borides is very critical for an accurate evaluation of the TLP bonding process. In this work, by means of the aberration-corrected transmission electron microscopy, we show, at an atomic scale, the Wyckoff positional order phenomenon of the metal atoms in the unit cell of M3B2- and M5B3-type boride. Meanwhile, the defect along the (001) plane of the above two types of boride are determined to be the polyhedral intergrowth with complex configurations.

  1. The Wyckoff positional order and polyhedral intergrowth in the M3B2- and M5B3-type boride precipitated in the Ni-based superalloys

    NASA Astrophysics Data System (ADS)

    Hu, X. B.; Zhu, Y. L.; Sheng, N. C.; Ma, X. L.

    2014-12-01

    Ni-based single superalloys play a crucial role in the hottest parts of jet engines. However, due to the complex geometry and macro-segregation during the solidification process, the cast defect such as stray grains is inevitable. Therefore, the transient liquid phase (TLP) bonding which can join several small single crystalline castings together is gradually believed to be an effective method for improving the yields of production of the complex components. The melting point depressant element B is always added into the interlayer filler material. Consequently, borides including the M3B2 and M5B3 phase usually precipitate during the TLP bonding process. So a comprehensive knowledge of the fine structural characteristics of the borides is very critical for an accurate evaluation of the TLP bonding process. In this work, by means of the aberration-corrected transmission electron microscopy, we show, at an atomic scale, the Wyckoff positional order phenomenon of the metal atoms in the unit cell of M3B2- and M5B3-type boride. Meanwhile, the defect along the (001) plane of the above two types of boride are determined to be the polyhedral intergrowth with complex configurations.

  2. The Wyckoff positional order and polyhedral intergrowth in the M3B2- and M5B3-type boride precipitated in the Ni-based superalloys

    PubMed Central

    Hu, X. B.; Zhu, Y. L.; Sheng, N. C.; Ma, X. L.

    2014-01-01

    Ni-based single superalloys play a crucial role in the hottest parts of jet engines. However, due to the complex geometry and macro-segregation during the solidification process, the cast defect such as stray grains is inevitable. Therefore, the transient liquid phase (TLP) bonding which can join several small single crystalline castings together is gradually believed to be an effective method for improving the yields of production of the complex components. The melting point depressant element B is always added into the interlayer filler material. Consequently, borides including the M3B2 and M5B3 phase usually precipitate during the TLP bonding process. So a comprehensive knowledge of the fine structural characteristics of the borides is very critical for an accurate evaluation of the TLP bonding process. In this work, by means of the aberration-corrected transmission electron microscopy, we show, at an atomic scale, the Wyckoff positional order phenomenon of the metal atoms in the unit cell of M3B2- and M5B3-type boride. Meanwhile, the defect along the (001) plane of the above two types of boride are determined to be the polyhedral intergrowth with complex configurations. PMID:25482386

  3. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary...

  4. 40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw... secondary indium subcategory. 421.190 Section 421.190 Protection of Environment ENVIRONMENTAL PROTECTION... CATEGORY Secondary Indium Subcategory § 421.190 Applicability: Description of the secondary...

  5. High-temperature thermochemistry of transition metal borides, silicides and related compounds. Final report

    SciTech Connect

    Klemppa, Ole J.

    2000-10-01

    Earlier this year in collaboration with Dr. Susan V. Meschel we prepared a major review paper which gives a comprehensive summary of what our laboratory has accomplished with support from DOE. This paper is No.43 in the List of Publications provided. It was presented to TMS at its National Meeting in Nashville, TN last March. A copy of the manuscript of this paper was recently mailed to DOE. It has been submitted for publication in Journal of Alloys and Compounds. This review paper summarizes our observed trends in the enthalpies of formation of TR-X and RE-X compounds (where X is a IIIB or IVB element) in their dependence of the atomic number of the transition metal (TR) and the lanthanide metal (RE). In this paper our measured enthalpies of formation for each alloy family are compared for the 3d, 4d and 5d transition metal elements. We also compare our experimental results with predicted values based on Miedema's semi-empirical model. Data are presented for the carbides, silicides, germanides and stannides in Group IVB, and for the borides and aluminides in Group IIIB. During the past year (1999-2000) we have extended our work to compounds of the 3d, 4d and 5d elements with gallium (see papers No.40, No.41, and No.45 in the List of Publications). Fig. 1 (taken from No.45) presents a systematic picture of our experimental values for the most exothermic gallide compounds formed with the transition elements. This figure is characteristic of the other systematic pictures which we have found for the two other IIIB elements which we have studied and for the four IVB elements. These figures are all presented in Ref. No.43. This paper also illustrates how the enthalpy of formation of compounds of the IIIB and IVB elements with the lanthanide elements (with the exception of Pm, Eu and Yb) depend on the atomic number of RE. Finally our results for the RE-X compounds are compared with the predictions of Gschneidner (K.A. Gschneidner, Jr., J. Less Common Metals 17, 1

  6. Structural and Physical Properties Diversity of New CaCu5-Type Related Europium Platinum Borides

    PubMed Central

    2013-01-01

    Three novel europium platinum borides have been synthesized by arc melting of constituent elements and subsequent annealing. They were characterized by X-ray powder and single-crystal diffraction: EuPt4B, CeCo4B type, P6/mmm, a = 0.56167(2) nm, c = 0.74399(3) nm; Eu3Pt7B2, Ca3Al7Cu2 type as an ordered variant of PuNi3, R3̅m, a = 0.55477(2) nm, c = 2.2896(1) nm; and Eu5Pt18B6–x, a new unique structure type, Fmmm, a = 0.55813(3) nm, b = 0.95476(5) nm, c = 3.51578(2) nm. These compounds belong to the CaCu5 family of structures, revealing a stacking sequence of CaCu5-type slabs with different structural units: CaCu5 and CeCo3B2 type in EuPt4B; CeCo3B2 and Laves MgCu2 type in Eu3Pt7B2; and CaCu5-, CeCo3B2-, and site-exchange ThCr2Si2-type slabs in Eu5Pt18B6–x. The striking motif in the Eu5Pt18B6–x structure is the boron-centered Pt tetrahedron [BPt4], which build chains running along the a axis and plays a decisive role in the structure arrangement by linking the terminal fragments of repeating blocks of fused Eu polyhedra. Physical properties of two compounds, EuPt4B and Eu3Pt7B2, were studied. Both compounds were found to order magnetically at 36 and 57 K, respectively. For EuPt4B a mixed-valence state of the Eu atom was confirmed via magnetic and specific heat measurements. Moreover, the Sommerfeld value of the specific heat of Eu3Pt7B2 was found to be extraordinarily large, on the order of 0.2 J/mol K2. PMID:23540751

  7. Indium and indium tin oxide induce endoplasmic reticulum stress and oxidative stress in zebrafish (Danio rerio).

    PubMed

    Brun, Nadja Rebecca; Christen, Verena; Furrer, Gerhard; Fent, Karl

    2014-10-01

    Indium and indium tin oxide (ITO) are extensively used in electronic technologies. They may be introduced into the environment during production, use, and leaching from electronic devices at the end of their life. At present, surprisingly little is known about potential ecotoxicological implications of indium contamination. Here, molecular effects of indium nitrate (In(NO3)3) and ITO nanoparticles were investigated in vitro in zebrafish liver cells (ZFL) cells and in zebrafish embryos and novel insights into their molecular effects are provided. In(NO3)3 led to induction of endoplasmic reticulum (ER) stress response, induction of reactive oxygen species (ROS) and induction of transcripts of pro-apoptotic genes and TNF-α in vitro at a concentration of 247 μg/L. In(NO3)3 induced the ER stress key gene BiP at mRNA and protein level, as well as atf6, which ultimately led to induction of the important pro-apoptotic marker gene chop. The activity of In(NO3)3 on ER stress induction was much stronger than that of ITO, which is explained by differences in soluble free indium ion concentrations. The effect was also stronger in ZFL cells than in zebrafish embryos. Our study provides first evidence of ER stress and oxidative stress induction by In(NO3)3 and ITO indicating a critical toxicological profile that needs further investigation.

  8. Tracking the Sources of Indium to the Environment

    NASA Astrophysics Data System (ADS)

    White, S. O.; Hemond, H.

    2009-12-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known about the natural or industrial cycling of indium, and although toxicity has been shown, toxicological data is incomplete and indium is not currently regulated in the United States. A review of the literature has shown that industrial releases of indium to the environment presently dominate natural fluxes. Mining and coal burning are the primary industrial sources of indium to the environment, with releases from the semiconductor industry small at present. This scenario may change with the rapid growth of semiconductor industries. In order to quantify releases of indium to the environment, it may be useful to exploit differences in the ratio of indium’s two stable isotopes, indium-113 and indium-115, from various sources. This method of source-tracking has proven useful for elements such as lead, where pollutant sources have significantly different isotopic ratios. Few measurements of indium isotopes have been published, and are mainly for purified indium metal or indium compounds; none are for environmental samples. The most recent measurements have shown 95.67 - 95.77% indium-115 and 4.23 - 4.33% indium-113, suggesting a range of natural isotopic abundances of at least 25 per mil. Our own measurements of highly purified, semiconductor grade indium show 95.9% indium-115 and 4.1% indium-113, indicating this range may be even larger. However, while the differences may be attributed to natural variation in isotopic ratios due to source differences or fractionation during processing, they could also be due to analytical error such as instrument fractionation. No isotopic reference material apparently exists with which to normalize measurements, therefore the reporting of absolute isotope percentages and lab-to-lab comparisons are difficult. Additionally, we have seen only a 0.5 per mil

  9. Indium-111 autologous leukocyte imaging in pancreatitis

    SciTech Connect

    Anderson, J.R.; Spence, R.A.; Laird, J.D.; Ferguson, W.R.; Kennedy, T.L.

    1986-03-01

    Thirty-nine patients with acute pancreatitis have been assessed using a prognostic factor grading system, abdominal ultrasound, and autologous leukocyte imaging. Both prognostic factor grading and leukocyte imaging can accurately assess the severity of the disease early in its course. All patients with a negative indium-labeled leukocyte image recovered without sequelae, whereas five of the 12 patients with a positive image developed complications, including two deaths. Abdominal ultrasound is of no value in assessing severity, but is a useful method of detecting those patients with gallstone-associated disease. In patients with suspected abscess formation following acute pancreatitis, indium leukocyte imaging does not differentiate between fat necrosis and abscess formation. In this situation, computerized tomography should be carried out before laparotomy is undertaken.

  10. Electroplated indium bump arrays and the bonding reliability

    NASA Astrophysics Data System (ADS)

    Qiuping, Huang; Gaowei, Xu; Gang, Quan; Yuan, Yuan; Le, Luo

    2010-11-01

    A novel electroplating indium bumping process is described, as a result of which indium bump arrays with a pitch of 100 μm and a diameter of 40 μm were successfully prepared. UBM (under bump metallization) for indium bumping was investigated with an XRD technique. The experimental results indicate that Ti/Pt (300 Å / 200 Å) has an excellent barrier effect both at room temperature and at 200 °C. The bonding reliability of the indium bumps was evaluated by a shear test. Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times. Such a phenomenon may be caused by the change in textures of the indium after reflow. The corresponding flip-chip process is also discussed in this paper.

  11. The toxicology of indium tin oxide.

    PubMed

    Bomhard, Ernst M

    2016-07-01

    Indium tin oxide (ITO) is a technologically important semiconductor. An increasing number of cases of severe lung effects (characterized by pulmonary alveolar proteinosis and/or interstitial fibrosis) in ITO-exposed workers warrants a review of the toxicological hazards. Short- and long-term inhalation studies in rats and mice revealed persistent alveolar proteinosis, inflammation and fibrosis in the lungs down to concentrations as low as 0.01mg/m(3). In rats, the incidences of bronchiolo-alveolar adenomas and carcinomas were significantly increased at all concentrations. In mice, ITO was not carcinogenic. A few bronchiolo-alveolar adenomas occurring after repeated intratracheal instillation of ITO to hamsters have to be interpreted as treatment-related. In vitro and in vivo studies on the formation of reactive oxygen species suggest epigenetic effects as cause of the lung tumor development. Repeated intratracheal instillation of ITO to hamsters slightly affected the male sexual organs, which might be interpreted as a secondary effect of the lung damage. Epidemiological and medical surveillance studies, serum/blood indium levels in workers as well as data on the exposure to airborne indium concentrations indicate a need for measures to reduce exposure at ITO workplaces. PMID:27343753

  12. Method for vacuum baking indium in-situ

    NASA Astrophysics Data System (ADS)

    Adamski, J. A.

    1985-12-01

    This invention pertains to a method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline indium phosphide which includes the step of heating raw indium under vaccuum in an open ended quartz ampoule to a temperature in excess of 850 C, followed by the step of sealing the ampoule while simultaneously maintaining the vacuum in the interior of the ampoule.

  13. InP (Indium Phosphide): Into the future

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  14. Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma Process

    NASA Technical Reports Server (NTRS)

    Greer, H. Frank (Inventor); Jones, Todd J. (Inventor); Vasquez, Richard P. (Inventor); Hoenk, Michael E. (Inventor); Dickie, Matthew R. (Inventor); Nikzad, Shouleh (Inventor)

    2012-01-01

    A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

  15. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  16. J/{psi} production in indium-indium collisions at SPS energies

    SciTech Connect

    Pillot, P.; Ducroux, L.; Guichard, A.; Tieulent, R.; Arnaldi, R.; Colla, A.; Cortese, P.; Ferretti, A.; Oppedisano, C.; Scomparin, E.; Averbeck, R.; Drees, A.; Banicz, K.; Keil, M.; Castor, J.; Devaux, A.; Force, P.; Manso, F.; Chaurand, B.; Cicalo, C.

    2006-01-12

    The NA60 experiment collected data on dimuon production in indium-indium collisions at 158 GeV/c per incident nucleon, in year 2003, to contribute to the clarification of several questions raised by previous experiments studying high-energy heavy-ion physics at the CERN SPS in search of the quark gluon plasma. Among these previous results stands the observation, by NA50, that the production yield of J/{psi} mesons is suppressed in central Pb-Pb collisions beyond the normal nuclear absorption defined by proton-nucleus data. By comparing the centrality dependence of the suppression pattern between different colliding systems, S-U, Pb-Pb and In-In, we should be able to identify the corresponding scaling variable, and the physics mechanism driving the suppression. In this paper, we will present the ratio of J/{psi} and Drell-Yan production cross-sections in indium-indium collisions, in three centrality bins, and how these values compare to previous measurements. We will also present a study of the transverse momentum distributions of the J/{psi} mesons, in seven centrality bins.

  17. Positive indium-111 leukocyte scintigraphy in a skeletal metastasis

    SciTech Connect

    Sfakianakis, G.N.; Mnaymneh, W.; Ghandur-Mnaymneh, L.; Al-Sheikh, W.; Hourani, M.; Heal, A.

    1982-09-01

    Indium-111 scintigraphy is a method proposed for specific diagnosis and localization of focal infection. It has been found that, in general, cancers did not visualize with leukocyte scintigraphy. In this article, a case of positive indium-111 leukocyte scintigrams of a foot metstasis from a mucoepidermoid carcinoma of the lung is reported. (JMT)

  18. Two-Step Plasma Process for Cleaning Indium Bonding Bumps

    NASA Technical Reports Server (NTRS)

    Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

    2009-01-01

    A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

  19. Low frequency pressure modulation of indium antimonide

    SciTech Connect

    Hallock, Gary A.; Meier, Mark A.

    2012-07-15

    A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient {alpha} of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

  20. Fabrication, structure and mechanical properties of indium nanopillars

    SciTech Connect

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  1. Fluxless indium and silver-indium bonding processes for photonics and high-temperature electronics

    NASA Astrophysics Data System (ADS)

    So, William Wilson

    A fluxless oxidation-free bonding technology using multilayer composite solders based on indium, or low melting temperature indium. alloys such as Ag-In, In-Sn and Au-In has been developed and studied. This technology eliminates the need of flux and scrubbing motion that are used in conventional soldering processes, and still produces good quality joints. By depositing multilayer composite materials in high vacuum, we eliminate the formation of an oxide layer thus removing the origin of the problem---solder oxidation. To understand the oxidation kinetics in the bonding process, I have modeled the oxidation rate of tin, which follows a parabolic growth law. For completeness of the oxidation model, I incorporated the temperature dependency of Henry's coefficient in the oxidation model. To prevent the solder material from oxidation when exposing to atmosphere, I have developed a technique, which utilizes the in-situ formation of stable intermetallic compound on the outer surface, or a gold layer to protect the bonding materials. The bonding is achieved by means of solid-liquid interdiffusion (SLID) and in-situ compound formation. The first alloy system that I studied is indium-silver. GaAs and silicon dice have been successfully bonded on silicon or glass substrates. The bonding quality is examined by a Scanning Acoustic Microscope (SAM). The results confirm that void-free joints are achieved. Cross-sections of the joint are examined using a Scanning Electron Microscope (SEM) equipped with Energy Dispersive X-ray (EDX) spectroscopy. The results reveal that the joint is composed of AuIn2, AgIn2-intermetallic compound and pure indium. From the Ag-In phase diagram, as indium composition is reduced to 25 wt. %, the solidus temperature jumps from 144 to above 695°C. By modifying the design of the multilayer composite, we developed a 210°C process to produce 700°C joints. All the well-bonded devices, before or after annealing, exceed the shear test force requirement of 2

  2. Patterning of Indium Tin Oxide Films

    NASA Technical Reports Server (NTRS)

    Immer, Christopher

    2008-01-01

    A relatively rapid, economical process has been devised for patterning a thin film of indium tin oxide (ITO) that has been deposited on a polyester film. ITO is a transparent, electrically conductive substance made from a mixture of indium oxide and tin oxide that is commonly used in touch panels, liquid-crystal and plasma display devices, gas sensors, and solar photovoltaic panels. In a typical application, the ITO film must be patterned to form electrodes, current collectors, and the like. Heretofore it has been common practice to pattern an ITO film by means of either a laser ablation process or a photolithography/etching process. The laser ablation process includes the use of expensive equipment to precisely position and focus a laser. The photolithography/etching process is time-consuming. The present process is a variant of the direct toner process an inexpensive but often highly effective process for patterning conductors for printed circuits. Relative to a conventional photolithography/ etching process, this process is simpler, takes less time, and is less expensive. This process involves equipment that costs less than $500 (at 2005 prices) and enables patterning of an ITO film in a process time of less than about a half hour.

  3. Discovery of Cadmium, Indium, and Tin Isotopes

    NASA Astrophysics Data System (ADS)

    Amos, Stephanie; Thoennessen, Michael

    2009-10-01

    As of today, no comprehensive study has been made covering the initial observations and identifications of isotopes. A project has been undertaken at MSU to document the discovery of all the known isotopes. The criteria defining discovery of a given isotope is the publication of clear mass and element assignment in a refereed journal. Prior to the current work the documentation of the discovery of eleven elements had been completed^1. These elements are cerium^2, arsenic, gold, tungsten, krypton, silver, vanadium, einsteinium, iron, barium, and cobalt. We will present the new documentation for the cadmium, indium, and tin isotopes. Thirty-seven cadmium isotopes, thirty-eight indium isotopes, and thirty-eight tin isotopes have been discovered so far. The description for each discovered isotope includes the year of discovery, the article published on the discovery, the article's author, the method of production, the method of identification, and any previous information concerning the isotope discovery. A summary and overview of all ˜500 isotopes documented so far as a function of discovery year, method and place will also be presented. ^1http://www.nscl.msu.edu/˜thoennes/2009/discovery.htm ^2J.Q. Ginepro, J. Snyder, and M. Thoennessen, At. Data Nucl. Data. Tables, in press (2009), doi:10.1016/j.adt.2009.06.002

  4. Slater-Pauling behavior within quaternary intermetallic borides of the Ti{sub 3}Co{sub 5}B{sub 2} structure-type

    SciTech Connect

    Burghaus, Jens; Dronskowski, Richard; Miller, Gordon J.

    2009-10-15

    First-principles, density-functional studies of several intermetallic borides of the general type M{sub 2}M'Ru{sub 5-n}Rh{sub n}B{sub 2} (n=0-5; M=Sc, Ti, Nb; M'=Fe, Co) show that the variation in saturation magnetic moment with valence-electron count follows a Slater-Pauling curve, with a maximum moment occurring typically at 66 valence electrons. The magnetic moments in these compounds occur primarily from the 3d electrons of the magnetically active M' sites, with some contribution from the Ru/Rh sites via magnetic polarization. Electronic DOS curves reveal that a rigid-band approach is a reasonable approximation for the estimation of saturation moments and the analysis of orbital interactions in this family of complex borides. COHP analyses of the M'-M' orbital interactions indicate optimized interactions in the minority spin states for Co-containing phases, but strong bonding interactions remaining in Fe-containing phases. - Graphical abstract: Theoretically determined (spin-polarized LMTO-GGA) local magnetic moments as a function of the chemical valence Z for various intermetallic borides.

  5. Surface Characterization and Mechanical Properties' Evaluation of Boride-Dispersed Nickel-Based Coatings Deposited on Copper Through Thermal Spray Routes

    NASA Astrophysics Data System (ADS)

    Sharma, Prashant; Majumdar, Jyotsna Dutta

    2012-09-01

    The present study concerns understanding the microstructures and wear resistance of nickel-based alloy (Ni 68.4, Cr 17, B 3.9, Si 4.9, and Fe 5.8) coatings on copper developed by flame spraying and high-velocity oxy-fuel (HVOF) coating techniques. The microstructure of flame spray deposition consists of predominantly equiaxed γ-Ni grains, refined Ni3B precipitates, and Ni2.9Cr0.7Fe0.36 phase. On the other hand, HVOF spray deposition reduces the porosity content significantly in the presence of very fine (with average precipitate size varying from μm to nm range) borides (chromium boride, Cr2B; and nickel boride, Ni3B) in γ-Ni matrix. The microhardness of the HVOF-sprayed and flame-sprayed surfaces were improved to 935 VHN and 251 VHN, respectively as compared with 82 VHN of the as-received substrate. Wear resistance property against WC indenter was also improved in deposited layers with a maximum improvement in HVOF spray deposition. The mechanism of wear was investigated.

  6. Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

    NASA Astrophysics Data System (ADS)

    Gaballa, Osama Gaballa Bahig

    Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering

  7. Convection sensitivity and thermal analyses for indium and indium-lead mixing experiment (74-18)

    NASA Technical Reports Server (NTRS)

    Bourgeois, S. V.; Doty, J. P.

    1976-01-01

    Sounding rocket Experiment 74-18 was designed to demonstrate the effects of the Black Brandt rocket acceleration levels (during the low-g coast phase of its flight) on the motion of a liquid metal system to assist in preflight design. Some post flight analyses were also conducted. Preflight studies consisted of heat transfer analysis and convection sensitivity and convection modeling analyses which aided in the: (1) final selection of fluid materials (indium-lead melts rather than paraffins); (2) design and timing of heater and quench system; and (3) preflight predictions of the degree of lead penetration into the pure indium segment of the fluid. Postflight studies involved: (1) updating the convection sensitivity calculations by utilizing actual flight gravity levels; and (2) modeling the mixing in the flight samples.

  8. High-efficiency indium tin oxide/indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

    1989-01-01

    Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

  9. Reflectance of metallic indium for solar energy applications

    NASA Technical Reports Server (NTRS)

    Bouquet, F. L.; Hasegawa, T.

    1984-01-01

    An investigation has been conducted in order to compile quantitative data on the reflective properties of metallic indium. The fabricated samples were of sufficiently high quality that differences from similar second-surface silvered mirrors were not apparent to the human eye. Three second-surface mirror samples were prepared by means of vacuum deposition techniques, yielding indium thicknesses of approximately 1000 A. Both hemispherical and specular measurements were made. It is concluded that metallic indium possesses a sufficiently high specular reflectance to be potentially useful in many solar energy applications.

  10. Kinetic investigation of indium-palladium alloy electrodeposition

    SciTech Connect

    Vinogradov, S.N.; Perelygin, Yu.P.; Efimov, E.A.

    1988-01-01

    The kinetics of alloy deposition of ammonium-citrate electrolyte used to produce alloys with indium content were studied. The electrolytes were composed of palladium, indium, ammonium sulfate, monosodium citrate, ammonium chloride, and saccharin at pH 9.5. Stationary and rotating disk electrodes and a potentiostat were used for the investigation. Spectrophotometry determined the mixed formation of citrate-ammonia palladium complexes. It was found that the considerable depolarization of indium ion discharge into the alloy occurred when saccharin was present in the electrolyte, and its direct electroreduction occurs from hydroxide compounds.

  11. Determination of indium in rocks by substoichiometric radioisotope dilution analysis

    USGS Publications Warehouse

    Greenland, L. Paul; Campbell, E.Y.

    1973-01-01

    Rocks containing 10-140 ng of indium per g are decomposed with hydrofluoric and nitric acids in the presence of 114In. Indium is separated from other constituents by sequential extractions of the bromide, cupferronate, and acetylacetonate, and is then reacted with a substoichiometric amont of EDTA. Excess of indium is removed by acetylacetone extraction and the specific activity of the complexed fraction is determined by counting 114In. Analyses of the U.S.G.S. standard rocks are reported. These show good agreement with previous neutron activation analyses. Repetitive rock analyses indicated an analytical precision of ??4-7%. ?? 1973.

  12. Electrodeposition of Indium Bumps for Ultrafine Pitch Interconnection

    NASA Astrophysics Data System (ADS)

    Tian, Yingtao; Liu, Changqing; Hutt, David; Stevens, Bob

    2014-02-01

    Electroplating is a promising method to produce ultrafine pitch indium bumps for assembly of pixel detectors in imaging applications. In this work, the process of indium bumping through electrodeposition was demonstrated and the influences of various current waveforms on the bump morphology, microstructure and height uniformity were investigated. Electron microscopy was used to study the microstructure of electroplated indium bumps and a Zygo white light interferometer was utilised to evaluate the height uniformity. The results indicated that the bump uniformities on wafer, pattern and feature scales were improved by using unipolar pulse and bipolar pulse reverse current waveforms.

  13. High quality factor indium oxide mechanical microresonators

    SciTech Connect

    Bartolomé, Javier Cremades, Ana; Piqueras, Javier

    2015-11-09

    The mechanical resonance behavior of as-grown In{sub 2}O{sub 3} microrods has been studied in this work by in-situ scanning electron microscopy (SEM) electrically induced mechanical oscillations. Indium oxide microrods grown by a vapor–solid method are naturally clamped to an aluminum oxide ceramic substrate, showing a high quality factor due to reduced energy losses during mechanical vibrations. Quality factors of more than 10{sup 5} and minimum detectable forces of the order of 10{sup −16} N/Hz{sup 1/2} demonstrate their potential as mechanical microresonators for real applications. Measurements at low-vacuum using the SEM environmental operation mode were performed to study the effect of extrinsic damping on the resonators behavior. The damping coefficient has been determined as a function of pressure.

  14. Indium foil with beryllia washer improves transistor heat dissipation

    NASA Technical Reports Server (NTRS)

    Hilliard, J.; John, J. E. A.

    1964-01-01

    Indium foil, used as an interface material in transistor mountings, greatly reduces the thermal resistance of beryllia washers. This method improves the heat dissipation of power transistors in a vacuum environment.

  15. Clinical imaging with indium-111 leukocytes: uptake in bowel infarction

    SciTech Connect

    Gray, H.W.; Cuthbert, I.; Richards, J.R.

    1981-08-01

    Leukocytes labeled with indium-111 accumulated in an area of small-bowel infarction, mimicking a paracolic abscess. Evidence of subacute bowel obstruction should alert the nuclear medicine physician to the former possibility.

  16. Reliability assessment of indium solder for low temperature electronic packaging

    NASA Astrophysics Data System (ADS)

    Chang, Rui W.; Patrick McCluskey, F.

    2009-11-01

    Indium is the choice of material for cryogenic joining applications. It is superior under repeated wide temperature excursions including extreme cold temperatures (below -55 °C) because of its excellent electrical conductivity and ductility at cryogenic temperatures. In particular, it is being considered for die/substrate attaches in low temperature SiGe BiCMOS modules for Martian and Lunar exploration. An efficient and systematic assessment was conducted to evaluate the reliability of indium solder under thermal fatigue and extended cold temperature mechanical fatigue conditions encountered in space exploration missions. In addition, fatigue failure sites, modes and mechanisms in indium solder at low temperature were investigated. A fatigue model was also calibrated for indium solder joint at cryogenic temperatures.

  17. On the transferability of electron density in binary vanadium borides VB, V3B4 and VB2.

    PubMed

    Terlan, Bürgehan; Akselrud, Lev; Baranov, Alexey I; Borrmann, Horst; Grin, Yuri

    2015-12-01

    Binary vanadium borides are suitable model systems for a systematic analysis of the transferability concept in intermetallic compounds due to chemical intergrowth in their crystal structures. In order to underline this structural relationship, topological properties of the electron density in VB, V3B4 and VB2 reconstructed from high-resolution single-crystal X-ray diffraction data as well as derived from quantum chemical calculations, are analysed in terms of Bader's Quantum Theory of Atoms in Molecules [Bader (1990). Atoms in Molecules: A Quantum Theory, 1st ed. Oxford: Clarendon Press]. The compounds VB, V3B4 and VB2 are characterized by a charge transfer from the metal to boron together with two predominant atomic interactions, the shared covalent B-B interactions and the polar covalent B-M interactions. The resembling features of the crystal structures are well reflected by the respective B-B interatomic distances as well as by ρ(r) values at the B-B bond critical points. The latter decrease with an increase in the corresponding interatomic distances. The B-B bonds show transferable electron density properties at bond critical points depending on the respective bond distances. PMID:26634735

  18. Transition metal carbides, nitrides and borides, and their oxygen containing analogs useful as water gas shift catalysts

    DOEpatents

    Thompson, Levi T.; Patt, Jeremy; Moon, Dong Ju; Phillips, Cory

    2003-09-23

    Mono- and bimetallic transition metal carbides, nitrides and borides, and their oxygen containing analogs (e.g. oxycarbides) for use as water gas shift catalysts are described. In a preferred embodiment, the catalysts have the general formula of M1.sub.A M2.sub.B Z.sub.C O.sub.D, wherein M1 is selected from the group consisting of Mo, W, and combinations thereof; M2 is selected from the group consisting of Fe, Ni, Cu, Co, and combinations thereof; Z is selected from the group consisting of carbon, nitrogen, boron, and combinations thereof; A is an integer; B is 0 or an integer greater than 0; C is an integer; O is oxygen; and D is 0 or an integer greater than 0. The catalysts exhibit good reactivity, stability, and sulfur tolerance, as compared to conventional water shift gas catalysts. These catalysts hold promise for use in conjunction with proton exchange membrane fuel cell powered systems.

  19. Recovery of indium from LCD screens of discarded cell phones.

    PubMed

    Silveira, A V M; Fuchs, M S; Pinheiro, D K; Tanabe, E H; Bertuol, D A

    2015-11-01

    Advances in technological development have resulted in high consumption of electrical and electronic equipment (EEE), amongst which are cell phones, which have LCD (liquid crystal display) screens as one of their main components. These multilayer screens are composed of different materials, some with high added value, as in the case of the indium present in the form of indium tin oxide (ITO, or tin-doped indium oxide). Indium is a precious metal with relatively limited natural reserves (Dodbida et al., 2012), so it can be profitable to recover it from discarded LCD screens. The objective of this study was to develop a complete process for recovering indium from LCD screens. Firstly, the screens were manually removed from cell phones. In the next step, a pretreatment was developed for removal of the polarizing film from the glass of the LCD panels, because the adherence of this film to the glass complicated the comminution process. The choice of mill was based on tests using different equipment (knife mill, hammer mill, and ball mill) to disintegrate the LCD screens, either before or after removal of the polarizing film. In the leaching process, it was possible to extract 96.4 wt.% of the indium under the following conditions: 1.0M H2SO4, 1:50 solid/liquid ratio, 90°C, 1h, and stirring at 500 rpm. The results showed that the best experimental conditions enabled extraction of 613 mg of indium/kg of LCD powder. Finally, precipitation of the indium with NH4OH was tested at different pH values, and 99.8 wt.% precipitation was achieved at pH 7.4.

  20. Determination of indium in standard rocks by neutron activation analysis.

    PubMed

    Johansen, O; Steinnes, E

    1966-08-01

    A rapid neutron activation method for the determination of indium in rocks, based on 54 min (116m)In, is described. The method has been applied to a series of geochemical standards including granite G-1 and diabase W-1. The precision is better than +/- 5% for samples containing more than 5 x 10(-10)g indium. Good agreement with previously published values for G-1 and W-1 has been obtained.

  1. Status of indium phosphide solar cell development at Spire

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

    1987-01-01

    On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

  2. Determination of indium in standard rocks by neutron activation analysis.

    PubMed

    Johansen, O; Steinnes, E

    1966-08-01

    A rapid neutron activation method for the determination of indium in rocks, based on 54 min (116m)In, is described. The method has been applied to a series of geochemical standards including granite G-1 and diabase W-1. The precision is better than +/- 5% for samples containing more than 5 x 10(-10)g indium. Good agreement with previously published values for G-1 and W-1 has been obtained. PMID:18959988

  3. Development of indium bumping technology through AZ9260 resist electroplating

    NASA Astrophysics Data System (ADS)

    Huang, Qiuping; Xu, Gaowei; Yuan, Yuan; Cheng, Xiao; Luo, Le

    2010-05-01

    Indium bumping is very critical technology in the application of high-density interconnection between a FPA (focal plane array) and a Si ROIC (read-out integrated circuit) by flip-chip bonding. In this paper, the indium BGA (ball grid array) chips are prepared with an electroplating method on the Si substrate. With such a method, the first difficulty arises in removing the seed layer. Two ways, including IBE (ion beam etching) and lift-off, are adopted to overcome it. The results show that the lift-off process is effective but not IBE. During the reflow process, many indium bumps fall off the substrate. Two ways are tried to solve this problem: one is to optimize the reflow profile and the other is to thicken the wetting layer. The results show that these two ways can effectively improve such status. The barrier effects of the UBM (under bump metallization) for indium, which are Ti/Pt (300 Å/200 Å) and Ti/Pt/Au/Ep Au (300 Å/200 Å/1000 Å/4 µm), are also investigated. Experimental results indicate that both of them can be used in application of integration of the FPA and ROIC. Reliability of indium bumps with these two kinds of UBM is evaluated by the shear test. The results show that their shear strength has a significant increase after reflow. For the indium bump with UBM of Ti/Pt/Au/Ep Au (300 Å/200 Å/1000 Å/4 µm), IMC (intermetallic compounds) at the interface of Au-In can strengthen the indium bump but may change the plasticity of indium.

  4. Analysis of the production of ATLAS indium bonded pixel modules

    NASA Astrophysics Data System (ADS)

    Alimonti, G.; Andreazza, A.; Bulgheroni, A.; Corda, G.; Di Gioia, S.; Fiorello, A.; Gemme, C.; Koziel, M.; Manca, F.; Meroni, C.; Nechaeva, P.; Paoloni, A.; Rossi, L.; Rovani, A.; Ruscino, E.

    2006-09-01

    The ATLAS collaboration is currently building 1500 pixel modules using the indium bump bonding technique developed by SELEX Sistemi Integrati (former AMS). The indium deposition and flip-chip process are described together with an overview of the chip stripping machine that allows defective modules to be reworked. The production is half-way through at the time of this writing. This paper also discusses the problems encountered during production and the adopted solutions.

  5. Indium acetate toxicity in male reproductive system in rats.

    PubMed

    Lee, Kuo-Hsin; Chen, Hsiu-Ling; Leung, Chung-Man; Chen, Hsin-Pao; Hsu, Ping-Chi

    2016-01-01

    Indium, a rare earth metal characterized by high plasticity, corrosion resistance, and a low melting point, is widely used in the electronics industry, but has been reported to be an environmental pollutant and a health hazard. We designed a study to investigate the effects of subacute exposure of indium compounds on male reproductive function. Twelve-week old male Sprague-Dawley rats were randomly divided into test and control groups, and received weekly intraperitoneal injections of indium acetate (1.5 mg/kg body weight) and normal saline, respectively, for 8 weeks. Serum indium levels, cauda epididymal sperm count, motility, morphology, chromatin DNA structure, mitochondrial membrane potential, oxidative stress, and testis DNA content were investigated. The indium acetate-treated group showed significant reproductive toxicity, as well as an increased percentage of sperm morphology abnormality, chromatin integrity damage, and superoxide anion generation. Furthermore, positive correlations among sperm morphology abnormalities, chromatin DNA damage, and superoxide anion generation were also noted. The results of this study demonstrated the toxic effect of subacute low-dose indium exposure during the period of sexual maturation on male reproductive function in adulthood, through an increase in oxidative stress and sperm chromatin DNA damage during spermiogenesis, in a rodent model.

  6. Indium Antimonide Nanowires: Synthesis and Properties.

    PubMed

    Shafa, Muhammad; Akbar, Sadaf; Gao, Lei; Fakhar-E-Alam, Muhammad; Wang, Zhiming M

    2016-12-01

    This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

  7. Indium Antimonide Nanowires: Synthesis and Properties

    NASA Astrophysics Data System (ADS)

    Shafa, Muhammad; Akbar, Sadaf; Gao, Lei; Fakhar-e-Alam, Muhammad; Wang, Zhiming M.

    2016-03-01

    This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

  8. Anomalous effect of vanadium boride seeding on thermoelectric properties of YB{sub 22}C{sub 2}N

    SciTech Connect

    Prytuliak, A.; Maruyama, S.; Mori, T.

    2013-05-15

    Highlights: ► We doped YB{sub 22}C{sub 2}N; the long awaited n-type counterpart to p-type boron carbide. ► VB{sub 2} seeding of YB{sub 22}C{sub 2}N showed striking results. ► Thermal treatment effects led to VB{sub 2} being intrinsically doped. ► Large increase of both Seebeck coefficient and electrical conductivity was obtained. - Abstract: Vanadium boride seeded YB{sub 22}C{sub 2}N were synthesized and the thermoelectric properties investigated. YB{sub 22}C{sub 2}N is representative of the series of rare earth borocarbonitrides which is the potential long awaited n-type counterpart to p-type boron carbide. VB{sub 2} seeded samples of YB{sub 22}C{sub 2}N were prepared using VB{sub 2} directly as an initial additive and V{sub 2}O{sub 3} which also results in formation of vanadium diboride in the final product. The resistivity and Seebeck coefficient of samples were measured in the temperature range of 323 K to 1073 K. A dramatic effect of thermal treatment on the Seebeck coefficient of VB{sub 2} seeded samples was observed, and it is indicated that there is possible partial intrinsic doping of vanadium into YB{sub 22}C{sub 2}N. VB{sub 2} is revealed to be a promising additive to improve the thermoelectric properties of YB{sub 22}C{sub 2}N. An enhancement of more than 220% of the maximum absolute value of the Seebeck coefficient was obtained while the resistivity was also reduced considerably.

  9. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

    NASA Astrophysics Data System (ADS)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan

    2016-10-01

    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  10. Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Singh, Budhi; Ghosh, Subhasis

    2014-09-01

    Highly conducting transparent indium-doped zinc oxide (IZO) thin films have been achieved by controlling different growth parameters using radio frequency magnetron sputtering. The structural, electrical, and optical properties of the IZO thin films have been investigated for varied indium content and growth temperature ( T G) in order to find out the optimum level of doping to achieve the highest conducting transparent IZO thin films. The highest mobility and carrier concentration of 11.5 cm2/V-s and 3.26 × 1020 cm-3, respectively, have been achieved in IZO doped with 2% indium. It has been shown that as T G of the 2% IZO thin films increase, more and more indium atoms are substituted into Zn sites leading to shift in (002) peaks towards higher angles which correspond to releasing the stress within the IZO thin film. The minimum resistivity of 5.3 × 10-4 Ω-cm has been achieved in 2% indium-doped IZO grown at 700°C.

  11. Indium-granulocyte scanning in the painful prosthetic joint

    SciTech Connect

    Pring, D.J.; Henderson, R.G.; Keshavarzian, A.; Rivett, A.G.; Krausz, T.; Coombs, R.R.; Lavender, J.P.

    1986-07-01

    The value of indium-111-labeled granulocyte scanning to determine the presence of infection was assessed in 50 prosthetic joints (41 of which were painful) in 40 patients. Granulocytes were obtained from the patients' blood and labeled in plasma with indium 111 tropolonate. Abnormal accumulation of indium 111 in the region of the prosthesis was noted. Proven infection occurred in 11 prostheses, and all of the infections were detected by indium-111-labeled granulocyte scanning. Nineteen were not infected (including nine asymptomatic controls) and only two produced false-positive scans. This represents a specificity of 89.5%, sensitivity of 100%, and overall accuracy of 93.2%. These results compare favorably with plain radiography. There was no radiologic evidence of infection in three of the infected prostheses, and 10 of the noninfected prostheses had some radiologic features that suggested sepsis. We conclude that indium-granulocyte scanning can reliably detect or exclude infection in painful prosthetic joints and should prove useful in clinical management.

  12. Method for forming indium oxide/n-silicon heterojunction solar cells

    DOEpatents

    Feng, Tom; Ghosh, Amal K.

    1984-03-13

    A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

  13. Indium-111-Photofrin-II scintillation scan

    SciTech Connect

    Origitano, T.C.; Karesh, S.M.; Reichman, O.H.; Henkin, R.E.; Caron, M.J.

    1989-04-01

    Photodynamic therapy is under intense investigation as an adjuvant treatment for malignant glial tumors of the central nervous system. Photofrin-II (HpD-II) is currently the most actively investigated photosensitizing agent. A crucial issue regarding the safe and efficacious usage of HpD-II-based photodynamic therapy is the individual in vivo kinetics of tumor uptake and retention, compared with normal brain clearance. The optimal time for photoactivation of sensitized tumor must be known to ensure a high target-to-nontarget ratio, resulting in the maximal tumor destruction while preserving normal brain. Our laboratory developed a radionuclide scan based on 111indium (111In)-labeled HpD-II to evaluate HpD-II localization and clearance noninvasively within a canine model of intracerebral gliosarcoma. Synthesis of the 111In-HpD-II complex in greater than 90% yield is achieved by a simple, rapid labeling method. Radiochemical purity and stability were verified by high-performance liquid chromatography. Using the canine model of intracerebral gliosarcoma, we followed the uptake of 111In-HpD-II in tumors with serial scintillation scanning. Localization of the tumor by 111In-HpD-II has been verified by contrast-enhanced computed tomographic scan followed by gross and histological examination of the enhancing brain region. Total body biodistribution of 111In-HpD-II at various times after injection has been evaluated. The ratio of uptake in tumor compared with surrounding brain peaked at 72 hours after injection. The knowledge of regional distribution and concentration of a photosensitizing agent within a tumor mass and surrounding brain allows for the most efficacious timing and localization of a photoactivating source.

  14. Materials flow of indium in the United States in 2008 and 2009

    USGS Publications Warehouse

    Goonan, Thomas G.

    2012-01-01

    Indium is a material that has many applications. It is used by anyone who watches television or views a computer screen. It is found in solar energy arrays and in soldering applications that are required to be lead free. In 2009, about 550 metric tons (t) of indium metal was produced from primary sources world-wide; it was estimated that the United States consumed about 110 t of indium metal (20 percent of world primary production). However, when imports of consumer products that contain indium are considered, the United States consumed about 200 t of indium (36 percent of world primary production). When one considers the recovery from the low-efficiency sputtering process that coats indium-tin oxide onto glass and other surfaces, the recycling rate (within the manufacturing process that uses indium-tin oxide in flat panel displays approaches 36 percent. However, indium recovery from old scrap generated from end-of-life consumer products is not sufficiently economic to add significantly to secondary production. Between 1988 and 2010, indium prices averaged $381 per kilogram (in constant 2000 dollars). However, prices have been quite volatile (deviating from the average of $381 per kilogram by ±$199 per kilogram, a 52 percent difference from the average), reflecting short-term disequilibrium of supply and demand but also responsiveness of supply to demand. The dynamics of zinc smelting govern the primary supply of indium because indium is a byproduct of zinc smelting. Secondary indium supply, which accounts for about one-half of total indium supply, is governed by indium prices and technological advances in recovery. Indium demand is expected to grow because the number and volume of cutting edge technology applications that depend on indium are expected to grow.

  15. Indium oxide inverse opal films synthesized by structure replication method

    NASA Astrophysics Data System (ADS)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  16. Occult purulent pericarditis detected by indium-111 leukocyte imaging

    SciTech Connect

    Greenberg, M.L.; Niebulski, H.I.; Uretsky, B.F.; Salerni, R.; Klein, H.A.; Forstate, W.J.; Starzl, T.E.

    1984-05-01

    Leukocyte imaging with indium-111 is a relatively new technique which, to this point in time, has been discussed almost exclusively in the radiologic literature. Although this procedure has been used mainly to detect intra-abdominal infection, the thorax is routinely imaged along with the abdomen, and therefore detection of cardiac disease may be feasible. This case report is of a young woman after liver transplantation who developed occult purulent pericarditis initially detected by a leukocyte scan with indium-111. This case demonstrates that striking pericardial uptake on a whole-body indium-111 leukocyte scan can occur with purulent pericarditis, and it reemphasizes how insidiously purulent pericarditis may present in an immunosuppressed patient.

  17. Mobility of indium on the ZnO(0001) surface

    SciTech Connect

    Heinhold, R.; Reeves, R. J.; Allen, M. W.; Williams, G. T.; Evans, D. A.

    2015-02-02

    The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.

  18. Synthesis and conductivity of indium-doped tin pyrophosphates

    SciTech Connect

    Garzon, Fernando H; Mukundan, Rangachary; Brosha, Eric L

    2008-01-01

    We have synthesized indium-doped tin pyrophosphates as high-temperature anhydrous proton conductors. The ratio of tin to indium was varied using two different synthetic methods. The first is a high-temperature reaction in which a paste containing the reactants in excess phosphoric acid was heated for various amounts of time at various temperatures. The second method is a solution precipitation procedure followed by calcination, which offers several advantages over traditional synthetic techniques. These advantages inc 1 ude better stoichiometric control, lower temperature requirements, and chemically uniform products. Several phosphate sources were investigated, including phosphoric acid, pyrophosphoric acid, and potassium pyrophosphate. The resulting indium-doped tin pyrophosphates had good proton conductivity over a wide temperature range with no humidification.

  19. Temperature dependence of the internal friction of polycrystalline indium

    NASA Astrophysics Data System (ADS)

    Sapozhnikov, K. V.; Golyandin, S. N.; Kustov, S. B.

    2010-12-01

    The temperature dependences of the internal friction and the elastic modulus of polycrystalline indium have been investigated in the temperature range 7-320 K at oscillatory loading frequencies of approximately 100 kHz. The effect of temperature on the amplitude dependence and the effect of high-amplitude loading at 7 K on the temperature and amplitude dependences of the internal friction of indium have been analyzed. It has been demonstrated that the thermocycling leads to microplastic deformation of indium due to the anisotropy of thermal expansion and the appearance of a "recrystallization" maximum in the spectrum of the amplitude-dependent internal friction. The conclusion has been drawn that the bulk diffusion of vacancies and impurities begins at temperatures of approximately 90 K and that, at lower temperatures, the diffusion occurs in the vicinity of dislocations. It has been revealed that the high-temperature internal friction background becomes noticeable after the dissolution of Cottrell atmospheres.

  20. A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

    NASA Astrophysics Data System (ADS)

    Flores-Rentería, M. A.; Ortiz-Domínguez, M.; Keddam, M.; Damián-Mejía, O.; Elias-Espinosa, M.; Flores-González, M. A.; Medina-Moreno, S. A.; Cruz-Avilés, A.; Villanueva-Ibañez, M.

    2015-02-01

    This work focused on the determination of boron diffusion coefficient through the Fe2B layers on AISI 1026 steel using a mathematical model. The suggested model solves the mass balance equation at the (Fe2B/substrate) interface. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for a treatment time ranging from 2 to 8 h. The generated boride layers were characterized by different experimental techniques such as light optical microscopy, scanning electron microscopy, XRD analysis and the Daimler-Benz Rockwell-C indentation technique. As a result, the boron activation energy for AISI 1026 steel was estimated as 178.4 kJ/mol. Furthermore, this kinetic model was validated by comparing the experimental Fe2B layer thickness with the predicted one at a temperature of 1253 K for 5 h of treatment. A contour diagram relating the layer thickness to the boriding parameters was proposed to be used in practical applications.

  1. Electronic, structural and magnetic studies of niobium borides of group 8 transition metals, Nb2MB2 (M=Fe, Ru, Os) from first principles calculations

    NASA Astrophysics Data System (ADS)

    Touzani, Rachid St.; Fokwa, Boniface P. T.

    2014-03-01

    The Nb2FeB2 phase (U3Si2-type, space group P4/mbm, no. 127) is known for almost 50 years, but until now its magnetic properties have not been investigated. While the synthesis of Nb2OsB2 (space group P4/mnc, no. 128, a twofold superstructure of U3Si2-type) with distorted Nb-layers and Os2-dumbbells was recently achieved, "Nb2RuB2" is still not synthesized and its crystal structure is yet to be revealed. Our first principles density functional theory (DFT) calculations have confirmed not only the experimental structures of Nb2FeB2 and Nb2OsB2, but also predict "Nb2RuB2" to crystalize with the Nb2OsB2 structure type. According to chemical bonding analysis, the homoatomic B-B interactions are optimized and very strong, but relatively strong heteroatomic M-B, B-Nb and M-Nb bonds (M=Fe, Ru, Os) are also found. These interactions, which together build a three-dimensional network, are mainly responsible for the structural stability of these ternary borides. The density-of-states at the Fermi level predicts metallic behavior, as expected, from metal-rich borides. Analysis of possible magnetic structures concluded preferred antiferromagnetic ordering for Nb2FeB2, originating from ferromagnetic interactions within iron chains and antiferromagnetic exchange interactions between them.

  2. The Availability of Indium: The Present, Medium Term, and Long Term

    SciTech Connect

    Lokanc, Martin; Eggert, Roderick; Redlinger, Michael

    2015-10-01

    Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

  3. Equation of state of liquid Indium under high pressure

    SciTech Connect

    Li, Huaming E-mail: mo.li@gatech.edu; Li, Mo E-mail: mo.li@gatech.edu; Sun, Yongli

    2015-09-15

    We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  4. Indium-doped GaAs: Investigation of deep traps

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Wolter, K.; Roentgen, P.; Seibert, K.; Kurz, H.; Camassel, J.

    1989-03-01

    The effect of indium incorporation on the concentration of deep traps in a series of GaAs epitaxial layers has been investigated by performing quantitative photoluminescence (PL) and capacitance [deep-level transient spectroscopy (DLTS)] spectroscopic studies. All samples were epitaxial layers of n-type GaAs:In, grown by organometallic vapor-phase epitaxy (OMVPE) on liquid-encapsulated Czochralski (LEC) -grown GaAs:Cr substrates. The calibrated indium concentration ranged between 0 and 6.5×1019 atoms cm-3, which is about 0.3% in alloy composition. We have investigated (i) the bands associated with chromium in both the epitaxial layers and the original substrates; (ii) a large recombination band, associated with an unidentified (D-VGa) complex, at about 1.2 eV; and (iii) the DLTS signal associated with the well-known deep trap EL2. We find the following. First, there is a one-to-one correspondence between the PL intensity associated with Cr2+, at 0.84 eV, and the D-VGa signal at 1.2 eV. This is true for both the epitaxial layers and the original substrates and suggests identification of the unknown donor participating in the D-VGa complex as Cr4+. Second, we find all PL intensities to decrease with increasing indium concentration, while the concentration and depth profile of EL2 are not affected. In contrast to the near-band-edge PL intensity, which increased with increasing indium content, there is a drop by about 1 order of magnitude for all chromium-related features when going from indium-free to about 0.3% indium-rich sample. Moreover, there is a one-to-one correspondence between the increase in the near-band-edge PL intensity and the decrease in the chromium-related signals. This establishes, on a fully experimental basis, the relative roles played by indium and chromium in our epitaxial samples: both compete to incorporate on gallium sites in the strain field of neighboring vacancies but, because of a higher incorporation rate, increasing the indium

  5. Equation of state of liquid Indium under high pressure

    NASA Astrophysics Data System (ADS)

    Li, Huaming; Sun, Yongli; Li, Mo

    2015-09-01

    We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids, these detailed predictions are yet to be confirmed by further experiment.

  6. Transition properties of low-lying states in atomic indium

    SciTech Connect

    Sahoo, B. K.; Das, B. P.

    2011-07-15

    We present here the results of our relativistic many-body calculations of various properties of the first six low-lying excited states of indium. The calculations were performed using the relativistic coupled-cluster method in the framework of the singles, doubles, and partial triples approximation. The lifetime of the [4p{sup 6}]5s{sup 2}5p{sub 3/2} state in this atom is determined. Our results could be used to shed light on the reliability of the lifetime measurements of the excited states of atomic indium that we have considered in the present work.

  7. Discovery of the calcium, indium, tin, and platinum isotopes

    SciTech Connect

    Amos, S.; Gross, J.L.; Thoennessen, M.

    2011-07-15

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. {yields} Summary of author, journal, year, place and country of discovery for each isotope. {yields} Brief description of discovery history of each isotope.

  8. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    SciTech Connect

    Sallis, Shawn; Quackenbush, Nicholas F.; Williams, Deborah S.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  9. Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

    SciTech Connect

    Yoshimura, Masatoshi Nakai, Eiji; Fukui, Takashi; Tomioka, Katsuhiro

    2013-12-09

    Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

  10. Modeling of Copper Indium/Gallium Diselenide Superlattices

    NASA Astrophysics Data System (ADS)

    Scurlock, Steven

    2005-03-01

    The copper indium/gallium diselenide superlattice is investigated numerically for different layer lengths of this particular lattice matched crystal. The main emphasis is on applying the Kronig-Penny model for the relevant band gap energies. By varying the sizes of the layers, the region where superlattice behavior should exist is determined.

  11. Sub-micronewton thrust measurements of indium field emission thrusters

    NASA Technical Reports Server (NTRS)

    Ziemer, J. K.

    2003-01-01

    The performance of three indium field emission thrusters (In-FETs) developed by the Austrian Research Center Seibersdorf (ARCS) have been measured up to 200 muN, 2 mA, and 20 W using a submicronewton resolution thrust stand.

  12. Visible light electroluminescent diodes of indium-gallium phosphide

    NASA Technical Reports Server (NTRS)

    Clough, R.; Richman, D.; Tietjen, J.

    1970-01-01

    Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

  13. p-type conduction in sputtered indium oxide films

    SciTech Connect

    Stankiewicz, Jolanta; Alcala, Rafael; Villuendas, Francisco

    2010-05-10

    We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.

  14. Detection of accessory spleens with indium 111-labeled autologous platelets

    SciTech Connect

    Davis, H.H., II; Varki, A.; Heaton, W.A.; Siegel, B.A.

    1980-01-01

    In two patients with recurrent immune thrombocytopenia, accessory splenic tissue was demonstrated by radionuclide imaging following administration of indium 111-labeled autologous platelets. In one of these patients, no accessory splenic tissue was seen on images obtained with technetium 99m sulfur colloid. This new technique provides a simple means for demonstrating accessory spleens and simultaneously evaluating the life-span of autologous platelets.

  15. Indium-111 labeled anti-melanoma monoclonal antibodies

    DOEpatents

    Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

    1984-04-30

    A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

  16. Cross-current leaching of indium from end-of-life LCD panels.

    PubMed

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

    2015-08-01

    Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2M sulfuric acid at 80°C for 10min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85-90%, and with 6 steps it was about 50-55%. Indium concentration in the leachate was about 35mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO2 (with 10 steps we assessed that the emission of about 90kg CO2-Eq. could be avoided) thanks to the recovery of indium. This new strategy represents a useful approach for secondary production of indium from waste LCD panels.

  17. Optimization of Indium Bump Morphology for Improved Flip Chip Devices

    NASA Technical Reports Server (NTRS)

    Jones, Todd J.; Nikzad, Shouleh; Cunningham, Thomas J.; Blazejewski, Edward; Dickie, Matthew R.; Hoenk, Michael E.; Greer, Harold F.

    2011-01-01

    Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

  18. Plasma Treatment to Remove Carbon from Indium UV Filters

    NASA Technical Reports Server (NTRS)

    Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

    2012-01-01

    The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

  19. Use of and Occupational Exposure to Indium in the United States

    PubMed Central

    Hines, Cynthia J.; Roberts, Jennifer L.; Andrews, Ronnee N.; Jackson, Matthew V.; Deddens, James A.

    2015-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009–2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m3 for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  20. Use of and occupational exposure to indium in the United States.

    PubMed

    Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

    2013-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  1. Use of and occupational exposure to indium in the United States.

    PubMed

    Hines, Cynthia J; Roberts, Jennifer L; Andrews, Ronnee N; Jackson, Matthew V; Deddens, James A

    2013-01-01

    Indium use has increased greatly in the past decade in parallel with the growth of flat-panel displays, touchscreens, optoelectronic devices, and photovoltaic cells. Much of this growth has been in the use of indium tin oxide (ITO). This increased use has resulted in more frequent and intense exposure of workers to indium. Starting with case reports and followed by epidemiological studies, exposure to ITO has been linked to serious and sometimes fatal lung disease in workers. Much of this research was conducted in facilities that process sintered ITO, including manufacture, grinding, and indium reclamation from waste material. Little has been known about indium exposure to workers in downstream applications. In 2009-2011, the National Institute for Occupational Safety and Health (NIOSH) contacted 89 potential indium-using companies; 65 (73%) responded, and 43 of the 65 responders used an indium material. Our objective was to identify current workplace applications of indium materials, tasks with potential indium exposure, and exposure controls being used. Air sampling for indium was either conducted by NIOSH or companies provided their data for a total of 63 air samples (41 personal, 22 area) across 10 companies. Indium exposure exceeded the NIOSH recommended exposure limit (REL) of 0.1 mg/m(3) for certain methods of resurfacing ITO sputter targets, cleaning sputter chamber interiors, and in manufacturing some inorganic indium compounds. Indium air concentrations were low in sputter target bonding with indium solder, backside thinning and polishing of fabricated indium phosphide-based semiconductor devices, metal alloy production, and in making indium-based solder pastes. Exposure controls such as containment, local exhaust ventilation (LEV), and tool-mounted LEV can be effective at reducing exposure. In conclusion, occupational hygienists should be aware that the manufacture and use of indium materials can result in indium air concentrations that exceed the NIOSH

  2. X-Ray photoelectron spectroscopy study of radiofrequency-sputtered titanium, carbide, molybdenum carbide, and titanium boride coatings and their friction properties

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1977-01-01

    Radiofrequency sputtered coatings of titanium carbide, molybdenum carbide and titanium boride were tested as wear resistant coatings on stainless steel in a pin on disk apparatus. X-ray photoelectron spectroscopy (XPS) was used to analyze the sputtered films with regard to both bulk and interface composition in order to obtain maximum film performance. Significant improvements in friction behavior were obtained when properly biased films were deposited on deliberately preoxidized substrates. XPS depth profile data showed thick graded interfaces for bias deposited films even when adherence was poor. The addition of 10 percent hydrogen to the sputtering gas produced coatings with thin poorly adherent interfaces. Results suggest that some of the common practices in the field of sputtering may be detrimental to achieving maximum adherence and optimum composition for these refractory compounds.

  3. Low-cost industrially available molybdenum boride and carbide as "platinum-like" catalysts for the hydrogen evolution reaction in biphasic liquid systems.

    PubMed

    Scanlon, Micheál D; Bian, Xiaojun; Vrubel, Heron; Amstutz, Véronique; Schenk, Kurt; Hu, Xile; Liu, BaoHong; Girault, Hubert H

    2013-02-28

    Rarely reported low-cost molybdenum boride and carbide microparticles, both of which are available in abundant quantities due to their widespread use in industry, adsorb at aqueous acid-1,2-dichloroethane interfaces and efficiently catalyse the hydrogen evolution reaction in the presence of the organic electron donor - decamethylferrocene. Kinetic studies monitoring biphasic reactions by UV/vis spectroscopy, and further evidence provided by gas chromatography, highlight (a) their superior rates of catalysis relative to other industrially significant transition metal carbides and silicides, as well as a main group refractory compound, and (b) their highly comparable rates of catalysis to Pt microparticles of similar dimensions. Insight into the catalytic processes occurring for each adsorbed microparticle was obtained by voltammetry at the liquid-liquid interface.

  4. Cross-current leaching of indium from end-of-life LCD panels

    SciTech Connect

    Rocchetti, Laura; Amato, Alessia; Fonti, Viviana; Ubaldini, Stefano; De Michelis, Ida; Kopacek, Bernd; Vegliò, Francesco; Beolchini, Francesca

    2015-08-15

    Graphical abstract: Display Omitted - Highlights: • End-of-life LCD panels represent a source of indium. • Several experimental conditions for indium leaching have been assessed. • Indium is completely extracted with 2 M sulfuric acid at 80 °C for 10 min. • Cross-current leaching improves indium extraction and operating costs are lowered. • Benefits to the environment come from reduction of CO{sub 2} emissions and reagents use. - Abstract: Indium is a critical element mainly produced as a by-product of zinc mining, and it is largely used in the production process of liquid crystal display (LCD) panels. End-of-life LCDs represent a possible source of indium in the field of urban mining. In the present paper, we apply, for the first time, cross-current leaching to mobilize indium from end-of-life LCD panels. We carried out a series of treatments to leach indium. The best leaching conditions for indium were 2 M sulfuric acid at 80 °C for 10 min, which allowed us to completely mobilize indium. Taking into account the low content of indium in end-of-life LCDs, of about 100 ppm, a single step of leaching is not cost-effective. We tested 6 steps of cross-current leaching: in the first step indium leaching was complete, whereas in the second step it was in the range of 85–90%, and with 6 steps it was about 50–55%. Indium concentration in the leachate was about 35 mg/L after the first step of leaching, almost 2-fold at the second step and about 3-fold at the fifth step. Then, we hypothesized to scale up the process of cross-current leaching up to 10 steps, followed by cementation with zinc to recover indium. In this simulation, the process of indium recovery was advantageous from an economic and environmental point of view. Indeed, cross-current leaching allowed to concentrate indium, save reagents, and reduce the emission of CO{sub 2} (with 10 steps we assessed that the emission of about 90 kg CO{sub 2}-Eq. could be avoided) thanks to the recovery of indium

  5. Titanium boride formation and its subsequent influence on morphology and crystallography of alpha precipitates in titanium alloys

    NASA Astrophysics Data System (ADS)

    Nandwana, Peeyush

    faults has been explained by calculating the interfacial energy of B27/Bf interfaces along with stacking fault formation energy. The boride precipitates have also been shown to modify the morphology of alpha phase from lath like to more equiaxed like. However, the influence of TiB on the crystallography of alpha precipitation has not been explored in great detail. The present study will clearly demonstrate, for the first time, the influence of various alloying elements present in the titanium alloy, on the resulting effect of B addition on alpha morphology and its crystallography in Ti alloys. Thus, the influence of B addition on alpha precipitation in two classes of commercial Ti alloys, i.e. beta alloys and alpha + beta alloys have been explored. It has been found that TiB nucleated alpha can either become equiaxed by a loss of Burgers orientation relationship (OR) with beta or can retain the lath morphology in case of alloys containing a combination of Ti, Al and Mo.

  6. Metallic Borides, La2Re3B7 and La3Re2B5, Featuring Extensive Boron-Boron Bonding.

    PubMed

    Bugaris, Daniel E; Malliakas, Christos D; Chung, Duck Young; Kanatzidis, Mercouri G

    2016-02-15

    La2Re3B7 and La3Re2B5 have been synthesized in single-crystalline form from a molten La/Ni eutectic at 1000 °C in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La2Re3B7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La3Re2B5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. The compounds possess three-dimensional framework structures that are built up from rhenium boride polyhedra and boron-boron bonding. La3Re2B5 features fairly common B2 dumbbells, whereas La2Re3B7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La3Re2B5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La2Re3B7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300 K of ∼375 μΩ cm. The electronic band structure calculations also suggest that La3Re2B5 is a regular metal. PMID:26812202

  7. Fibrotic gene expression coexists with alveolar proteinosis in early indium lung.

    PubMed

    Noguchi, Shuhei; Eitoku, Masamitsu; Kiyosawa, Hidenori; Suganuma, Narufumi

    2016-08-01

    Occupational inhalation of indium compounds can cause the so-called "indium lung disease". Most affected individuals show pulmonary alveolar proteinosis (PAP) and fibrotic interstitial lung disease. In animal experiments, inhalation of indium tin oxide or indium oxide has been shown to cause lung damage. However, the mechanisms by which indium compounds lead to indium lung disease remain unknown. In this study, we constructed a mouse model of indium lung disease and analyzed gene expression in response to indium exposure. Indium oxide (In2O3, 10 mg/kg, primary particle size <100 nm) was administered intratracheally to C57BL/6 mice (male, 8 weeks of age) twice a week for 8 weeks. Four weeks after the final instillation, histopathological analysis exhibited periodic acid-Schiff positive material in the alveoli, characteristic of PAP. Comprehensive gene expression analysis by RNA-Seq, however, revealed expression of fibrosis-related genes, such as surfactant associated protein D, surfactant associated protein A1, mucin 1, and collagen type I and III, was significantly increased, indicating that fibrotic gene expression progresses in early phase of indium lung. These data supported the latest hypothesis that PAP occurs as an acute phase response and is replaced by fibrosis after long-term latency.

  8. Synthesis and photophysical characterization of stable indium bacteriochlorins.

    PubMed

    Krayer, Michael; Yang, Eunkyung; Kim, Han-Je; Kee, Hooi Ling; Deans, Richard M; Sluder, Camille E; Diers, James R; Kirmaier, Christine; Bocian, David F; Holten, Dewey; Lindsey, Jonathan S

    2011-05-16

    Bacteriochlorins have wide potential in photochemistry because of their strong absorption of near-infrared light, yet metallobacteriochlorins traditionally have been accessed with difficulty. Established acid-catalysis conditions [BF(3)·OEt(2) in CH(3)CN or TMSOTf/2,6-di-tert-butylpyridine in CH(2)Cl(2)] for the self-condensation of dihydrodipyrrin-acetals (bearing a geminal dimethyl group in the pyrroline ring) afford stable free base bacteriochlorins. Here, InBr(3) in CH(3)CN at room temperature was found to give directly the corresponding indium bacteriochlorin. Application of the new acid catalysis conditions has afforded four indium bacteriochlorins bearing aryl, alkyl/ester, or no substituents at the β-pyrrolic positions. The indium bacteriochlorins exhibit (i) a long-wavelength absorption band in the 741-782 nm range, which is shifted bathochromically by 22-32 nm versus the analogous free base species, (ii) fluorescence quantum yields (0.011-0.026) and average singlet lifetime (270 ps) diminished by an order of magnitude versus that (0.13-0.25; 4.0 ns) for the free base analogues, and (iii) higher average yield (0.9 versus 0.5) yet shorter average lifetime (30 vs 105 μs) of the lowest triplet excited state compared to the free base compounds. The differences in the excited-state properties of the indium chelates versus free base bacteriochlorins derive primarily from a 30-fold greater rate constant for S(1) → T(1) intersystem crossing, which stems from the heavy-atom effect on spin-orbit coupling. The trends in optical properties of the indium bacteriochlorins versus free base analogues, and the effects of 5-OMe versus 5-H substituents, correlate well with frontier molecular-orbital energies and energy gaps derived from density functional theory calculations. Collectively the synthesis, photophysical properties, and electronic characteristics of the indium bacteriochlorins and free base analogues reported herein should aid in the further design of such

  9. Pressed boride cathodes

    NASA Technical Reports Server (NTRS)

    Wolski, W.

    1985-01-01

    Results of experimental studies of emission cathodes made from lanthanum, yttrium, and gadolinium hexaborides are presented. Maximum thermal emission was obtained from lanthanum hexaboride electrodes. The hexaboride cathodes operated stably under conditions of large current density power draw, at high voltages and poor vacuum. A microtron electron gun with a lanthanum hexaboride cathode is described.

  10. Oxygen-free atomic layer deposition of indium sulfide

    DOEpatents

    Martinson, Alex B.; Hock, Adam S.; McCarthy, Robert; Weimer, Matthew S.

    2016-07-05

    A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

  11. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOEpatents

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  12. Preparation and photoluminescence study of mesoporous indium hydroxide nanorods

    SciTech Connect

    Li, Changyu; Lian, Suoyuan; Liu, Yang; Liu, Shouxin; Kang, Zhenhui

    2010-02-15

    Mesoporous indium hydroxide nanorods were successfully synthesized by a mild one-step one-pot method. The obtained samples were characterized by X-ray diffraction, transmission electron microscopy with selected area electron diffraction, N{sub 2} adsorption, ultraviolet-visible absorption and photoluminescence, respectively. Transmission electron microscopy showed that there were some pores in the samples, which were mainly composed of rod-like shapes with length of 300 nm and diameter of 90 nm. N{sub 2} adsorption/desorption measurements confirmed that the prepared powder was mesoporous with average pore diameter of 3.1 nm. The ultraviolet-visible absorption spectroscopy analysis indicated that the band gap energy of the samples was 5.15 eV. Photoluminescence spectrum showed that there were two strong emissions under ultraviolet light irradiation. The growth mechanism of indium hydroxide nanorods and the role of cetyltrimethyl ammonium bromide were also discussed.

  13. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Erickson, A.S.; Chu, J.-H.; Toney, M.F.; Geballe, T.H.; Fisher, I.R.; /SLAC, SSRL /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.

    2010-02-15

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  14. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Erickson, A.S.

    2010-05-03

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  15. Determination of series resistance of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Weinberg, Irving

    1991-01-01

    The series resistance of a solar cell is an important parameter, which must be minimized to achieve high cell efficiencies. The cell series resistance is affected by the starting material, its design, and processing. The theoretical approach proposed by Jia, et. al., is used to calculate the series resistance of indium phosphide solar cells. It is observed that the theoretical approach does not predict the series resistance correctly in all cases. The analysis was modified to include the use of effective junction ideality factor. The calculated results were compared with the available experimental results on indium phosphide solar cells processed by different techniques. It is found that the use of process dependent junction ideality factor leads to better estimation of series resistance. An accurate comprehensive series resistance model is warranted to give proper feedback for modifying the cell processing from the design state.

  16. Enhanced superconducting pairing interaction in indium-doped tin telluride

    SciTech Connect

    Lavagnini, M.

    2010-02-24

    The ferroelectric degenerate semiconductor Sn{sub 1-{delta}}Te exhibits superconductivity with critical temperatures, T{sub c}, of up to 0.3 K for hole densities of order 10{sup 21} cm{sup -3}. When doped on the tin site with greater than x{sub c} = 1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for x > x{sub c} than for x < x{sub c}. By examining the effect of In dopant atoms on both T{sub c} and the temperature of the ferroelectric structural phase transition, T{sub SPT}, we show that phonon modes related to this transition are not responsible for this T{sub c} enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

  17. Indium-111 leukocyte scintigraphy in Wegener's granulomatosis involving the spleen

    SciTech Connect

    Morayati, S.J.; Fink-Bennett, D.

    1986-12-01

    Indium-111-labeled leukocyte scintigraphy was performed on a 44-yr-old man to exclude an occult abscess. Four- and twenty-four-hour images of the abdomen revealed splenic photopenia except for a rim of activity medially. A subsequent computed tomography (CT) study demonstrated necrosis or hemorrhage of the spleen except for a medial rim. Exploratory laparotomy demonstrated necrotizing vasculitis with granuloma formation consistent with Wegener's granulomatosis and a rim of viable splenic tissue corresponding to the radionuclide and CT studies.

  18. Immune stimulation following dermal exposure to unsintered indium tin oxide.

    PubMed

    Brock, Kristie; Anderson, Stacey E; Lukomska, Ewa; Long, Carrie; Anderson, Katie; Marshall, Nikki; Meade, B Jean

    2014-01-01

    In recent years, several types of pulmonary pathology, including alveolar proteinosis, fibrosis, and emphysema, have been reported in workers in the indium industry. To date, there remains no clear understanding of the underlying mechanism(s). Pulmonary toxicity studies in rats and mice have demonstrated the development of mediastinal lymph node hyperplasia and granulomas of mediastinal lymph nodes and bronchus-associated lymphoid tissues following exposure to indium tin oxide. Given the association between exposure to other metals and the development of immune-mediated diseases, these studies were undertaken to begin to investigate the immuno-modulatory potential of unsintered indium tin oxide (uITO) in a mouse model. Using modifications of the local lymph node assay, BALB/c mice (five animals/group) were exposed topically via intact or breached skin or injected intradermally at the base of the ear pinnae with either vehicle or increasing concentrations 2.5-10% uITO (90:10 indium oxide/tin oxide, particle size <50 nm). Dose-responsive increases in lymphocyte proliferation were observed with a calculated EC3 of 4.7% for the intact skin study. Phenotypic analysis of draining lymph node cells following intradermal injection with 5% uITO yielded a profile consistent with a T-cell-mediated response. These studies demonstrate the potential for uITO to induce sensitization and using lymphocyte proliferation as a biomarker of exposure, and demonstrate the potential for uITO to penetrate both intact and breached skin.

  19. Indium Helps Strengthen Al/Cu/Li Alloy

    NASA Technical Reports Server (NTRS)

    Blackburn, Linda B.; Starke, Edgar A., Jr.

    1992-01-01

    Experiments on Al/Cu/Li alloys focus specifically on strengthening effects of minor additions of In and Cd. Indium-bearing alloy combines low density with ability to achieve high strength through heat treatment alone. Tensile tests on peak-aged specimens indicated that alloy achieved yield strength approximately 15 percent higher than baseline alloy. Alloy highly suitable for processing to produce parts of nearly net shape, with particular applications in aircraft and aerospace vehicles.

  20. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Metaferia, Wondwosen; Sun, Yan-Ting; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto; Lourdudoss, Sebastian

    2014-07-01

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III-V semiconductor layers on low cost and flexible substrates for solar cell applications.

  1. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    SciTech Connect

    Metaferia, Wondwosen; Sun, Yan-Ting Lourdudoss, Sebastian; Pietralunga, Silvia M.; Zani, Maurizio; Tagliaferri, Alberto

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  2. Effect of strain on indium incorporation in heteroepitaxial (indium, gallium) nitride nanomaterials

    NASA Astrophysics Data System (ADS)

    Ewoldt, David A.

    2011-12-01

    One of the challenges facing LED lighting today is the achievement of low-cost true white lighting. Ideally, multiple LEDs of different colors, blue, red and green, would be utilized in order to achieve white light. Currently, the quality of green LEDs is low when compared to the red and blue counterparts. Green emission from LEDs is difficult to achieve due to phase segregation that occurs during growth of the (In,Ga)N LED structure, which separates into compositions of high and low InN concentration and prevents the moderate composition required for green emission. On the nanoscale, strain effects in the (In,Ga)N material system give rise to shifts in optical properties. Relieving strain allows for the incorporation of additional indium nitride, which shifts the wavelength of light emitted by the structure. In order to control strain effects, growth templates were fabricated by several methods (PAA, FIB, EBL). A robust process for fabrication of pores down to 25 nm in diameter has been developed in order to investigate this effect. From this process, a template using e-beam lithography has been created and then growth of (In,Ga)N on this template in a metallorganic chemical vapor deposition system was performed. As (In,Ga)N grows from the GaN substrate, it is naturally strained due to the lattice mismatch. Lateral growth out of the templates relieves strain by allowing the rods to expand as they grow out of the prepared pores. The effect of the diameter of pores on the emission characteristics has been analyzed and a strong logarithmic trend was discovered correlating emission wavelength to pore diameter. In addition to allowing control over the wavelength of emission based on pore diameter, the process that has been developed and demonstrated will allow a distribution of pore sizes that could facilitate color mixing.

  3. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.

    PubMed

    Tanaka, Akiyo

    2004-08-01

    Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials.

  4. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    NASA Astrophysics Data System (ADS)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  5. Effect of preparation conditions on physic-chemical properties of tin-doped nanocrystalline indium oxide

    NASA Astrophysics Data System (ADS)

    Malinovskaya, T. D.; Sachkov, V. I.; Zhek, V. V.; Nefedov, R. A.

    2016-01-01

    In this paper the results of investigation of phase formation and change of concentration of free electrons (Ne) in indium tin oxide system during heat treatment of coprecipitated hydroxides of indium and tin from nitric and hydrochloric solutions and also, for comparison melts of salts nitrates by an alkaline reactant (NH4OH) are considered.The performed investigation allowed to set the optimal condition of preparation of polycrystalline tin-doped indium oxide with maximal electron concentration.

  6. Determination of indium and tin by activation analysis using replacement substoichiometry.

    PubMed

    Obrusník, I

    1969-05-01

    A new method for the determination of indium by activation analysis has been developed. It is based on the replacement of indium from indium dithizonate (in carbon tetrachloride) by a substoichiometric amount of aqueous mercury(II) solution. Preliminary steps are the extraction of indium from alkaline cyanide solution with an excess of dithizone solution and washing the extract with buffer solution. The time necessary for the separation is 10-20 min. With this method indium can be determined by using either short ((116m)In, t(1 2 ) = 54 min) or long-lived radioisotopes ((114m)In, t(1 2 = 50 d). As by the reaction (112)Sn (n, gamma)) (113)Sn (119d) --> (113)In (104 min), indium-113m is formed, which has a different gamma-spectrum from that of indium-114m, the determination of both indium and tin is possible. The proposed method has been applied to the determination of indium and tin in granite and gallium.

  7. Method for enhancing the solubility of boron and indium in silicon

    DOEpatents

    Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

    2002-01-01

    A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

  8. Optimization of indium bump preparation in infrared focal plane array fabrication

    NASA Astrophysics Data System (ADS)

    Hou, Zhijin; Si, Junjie; Wang, Wei; Wang, Haizhen; Wang, Liwen

    2014-11-01

    Optimization of indium bump preparation in infrared focal plane array (IRFPA) fabrication is presented. Reasons of bringing defective pixels during conventional lift-off and cleanout process in fabrication of indium bump are discussed. IRFPAs are characterized by IRFPA test-bench. Results show that defective pixels of InSb IRFPA are owing to indium bumps connecting through indium residue on the surface of wafer. The characteristic and configuration of defective pixels of InSb IRFPA are given and analyzed. A method of reducing defective pixels through optimizing liftoff and cleanout process in InSb IRFPA is proposed. Results prove that this method is effective.

  9. Ultrasonic-Assisted Acid Leaching of Indium from Blast Furnace Sludge

    NASA Astrophysics Data System (ADS)

    Shen, Xingmei; Li, Liaosha; Wu, Zhaojin; Lü, Huihong; Lü, Jia

    2013-12-01

    Ultrasonic-assisted acid leaching was used to improve extraction of indium from blast furnace sludge. The effects of solid-liquid ratio, leaching temperature, and leaching time on extraction of indium were investigated and three leaching methods of high temperature acid leaching (HL), ultrasonic acid leaching (UL), and high temperature-ultrasonic acid leaching (HUL) were compared. The results show that extraction of indium increases with leaching time for all the methods. UL exhibits the lowest indium extraction. For HL, extraction of indium reaches 32.6 pct when the leaching time is 4 hours, and after 4 hours, the extraction increases slowly. Leaching temperature has a more positive effect on extraction of indium than ultrasonic. HUL can lead to a higher extraction of indium than high temperature acid leaching and UL, and extraction of indium reaches 40.4 pct when the leaching time is 2 hours. After 2 hours, no obvious increase occurs. HUL not only increases extraction of indium but also reduces the leaching time which can improve production efficiency.

  10. The electronic structure, mechanical and thermodynamic properties of Mo{sub 2}XB{sub 2} and MoX{sub 2}B{sub 4} (X = Fe, Co, Ni) ternary borides

    SciTech Connect

    He, TianWei; Jiang, YeHua E-mail: jfeng@seas.harvard.edu; Zhou, Rong; Feng, Jing E-mail: jfeng@seas.harvard.edu

    2015-08-21

    The mechanical properties, electronic structure and thermodynamic properties of the Mo{sub 2}XB{sub 2} and MoX{sub 2}B{sub 4} (X = Fe, Co, Ni) ternary borides were calculated by first-principles methods. The elastic constants show that these ternary borides are mechanically stable. Formation enthalpy of Mo{sub 2}XB{sub 2} and MoX{sub 2}B{sub 4} (X = Fe, Co, Ni) ternary borides are at the range of −118.09 kJ/mol to −40.14 kJ/mol. The electronic structures and chemical bonding characteristics are analyzed by the density of states. Mo{sub 2}FeB{sub 2} has the largest shear and Young's modulus because of its strong chemical bonding, and the values are 204.3 GPa and 500.3 GPa, respectively. MoCo{sub 2}B{sub 4} shows the lowest degree of anisotropy due to the lack of strong direction in the bonding. The Debye temperature of MoFe{sub 2}B{sub 4} is the largest among the six phases, which means that MoFe{sub 2}B{sub 4} possesses the best thermal conductivity. Enthalpy shows an approximately linear function of the temperature above 300 K. The entropy of these compounds increase rapidly when the temperature is below 450 K. The Gibbs free energy decreases with the increase in temperature. MoCo{sub 2}B{sub 4} has the lowest Gibbs free energy, which indicates the strongest formation ability in Mo{sub 2}XB{sub 2} and MoX{sub 2}B{sub 4} (X = Fe, Co, Ni) ternary borides.

  11. Indium hydroxide to bixbyite-type indium oxide transition probed in situ by time resolved synchrotron radiation.

    PubMed

    Schlicker, L; Riedel, R; Gurlo, A

    2009-12-01

    The understanding of the transformation mechanism involved in the dehydroxylation reactions in the In-O-H system exhibits large controversy and discrepancy; it holds especially for the formation of the metastable nanosized intermediates as well as for the structural relation between corresponding phases. It was recently reported that indium oxohydroxide (InOOH) appears as an intermediate phase in the thermal dehydroxylation of nanoscaled In(OH)(3). Our in situ time resolved high energy synchrotron radiation experiments showed unambiguously that no intermediate crystalline or amorphous phases have been observed during the phase transition (dehydroxylation) from nanosized indium hydroxide to indium oxide. Under our experimental conditions, the c-In(OH)(3) to bixbyite-type In(2)O(3) transition was observed between 280 and 305 degrees C and the conversion completed around 305 degrees C without any observable intermediates. The formation of InOOH during the phase transition In(OH)(3)-->bixbyite-type In(2)O(3) can be ruled out. This finding is of high relevance and importance for the controllable synthesis of nanocrystalline In(2)O(3)-based materials.

  12. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  13. Pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody in murine experimental viral myocarditis

    SciTech Connect

    Yamada, T.; Matsumori, A.; Watanabe, Y.; Tamaki, N.; Yonekura, Y.; Endo, K.; Konishi, J.; Kawai, C. )

    1990-11-01

    The pharmacokinetics of indium-111-labeled antimyosin monoclonal antibody Fab were investigated with use of murine experimental viral myocarditis as a model. The biodistribution of indium-111-labeled antimyosin antibody Fab on days 3, 5, 7, 14, 21 and 28 after encephalomyocarditis virus inoculation demonstrated that myocardial uptake increased significantly on days 5, 7 and 14 (maximum on day 7) in infected versus uninfected mice (p less than 0.001). In vivo kinetics in infected mice on day 7 demonstrated that the heart to blood ratio reached a maximum 48 h after the intravenous administration of indium-111-labeled antimyosin Fab, which was considered to be the optimal time for scintigraphy. The scintigraphic images obtained with indium-111-labeled antimyosin Fab demonstrated positive uptake in the cardiac lesion in infected mice. The pathologic study demonstrated that myocardial uptake correlated well with pathologic grades of myocardial necrosis. High performance liquid chromatography revealed the presence of an antigen-antibody complex in the circulation of infected mice after the injection of indium-111-labeled antimyosin Fab. This antigen bound to indium-111-labeled antimyosin Fab in the circulation might be whole myosin and this complex may decrease myocardial uptake and increase liver uptake. It is concluded that indium-111-labeled antimyosin monoclonal antibody Fab accumulates selectively in damaged heart tissue in mice with acute myocarditis and that indium-111-labeled antimyosin Fab scintigraphy may be a useful method for the visualization of acute myocarditis.

  14. Intracellular accumulation of indium ions released from nanoparticles induces oxidative stress, proinflammatory response and DNA damage.

    PubMed

    Tabei, Yosuke; Sonoda, Akinari; Nakajima, Yoshihiro; Biju, Vasudevanpillai; Makita, Yoji; Yoshida, Yasukazu; Horie, Masanori

    2016-02-01

    Due to the widespread use of indium tin oxide (ITO), it is important to investigate its effect on human health. In this study, we evaluated the cellular effects of ITO nanoparticles (NPs), indium chloride (InCl3) and tin chloride (SnCl3) using human lung epithelial A549 cells. Transmission electron microscopy and inductively coupled plasma mass spectrometry were employed to study cellular ITO NP uptake. Interestingly, greater uptake of ITO NPs was observed, as compared with soluble salts. ITO NP species released could be divided into two types: 'indium release ITO' or 'tin release ITO'. We incubated A549 cells with indium release ITO, tin release ITO, InCl3 or SnCl2 and investigated oxidative stress, proinflammatory response, cytotoxicity and DNA damage. We found that intracellular reactive oxygen species were increased in cells incubated with indium release ITO, but not tin release ITO, InCl3 or SnCl2. Messenger RNA and protein levels of the inflammatory marker, interleukin-8, also increased following exposure to indium release ITO. Furthermore, the alkaline comet assay revealed that intracellular accumulation of indium ions induced DNA damage. Our results demonstrate that the accumulation of ionic indium, but not ionic tin, from ITO NPs in the intracellular matrix has extensive cellular effects.

  15. Materials recovery from waste liquid crystal displays: A focus on indium.

    PubMed

    Fontana, Danilo; Forte, Federica; De Carolis, Roberta; Grosso, Mario

    2015-11-01

    In the present work the recovery of indium and of the polarizing film from waste liquid crystal displays was experimentally investigated in the laboratory. First of all, the polarizing film was removed by employing a number of different techniques, including thermal and chemical treatments. Leaching of indium was then performed with HCl 6N, which allowed solubilisation of approximately 90% In (i.e. 260 mg In per kg of glass) at room temperature, without shredding. Indium recovery from the aqueous phase was then investigated through solvent extraction with polyethylene glycol (PEG)-based aqueous biphasic systems. Indium extraction tests through the PEG-ammonium sulphate-water system were conducted as a function of PEG concentration, salt concentration and molecular weight of PEG, using 1,10 phenanthroline as a ligand. The experimental results demonstrated that indium partitioning between the bottom (salt-rich) and the top (PEG-rich) phase is quite independent on the composition of the system, since 80-95% indium is extracted in the bottom phase and 5-20% in the top phase; it was also found that when PEG concentration is increased, the ratio between the bottom and the upper phase volumes decreases, resulting in an increase of indium concentration in the bottom phase (at [PEG]=25% w/w, indium concentration in the bottom phase is ∼30% higher than the initial concentration before the extraction).

  16. Indium phosphide space solar cell research: Where we are and where we are going

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.; Weinberg, Irving

    1995-01-01

    Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

  17. Detection of deep venous thrombosis by indium-111 leukocyte scintigraphy

    SciTech Connect

    D'Alonzo, W.A. Jr.; Alavi, A.

    1986-05-01

    Indium-111-labeled leukocyte ((/sup 111/In)WBC) scintigraphy has been used successfully for detection of inflammation. Occasionally, noninflammatory collections of white blood cells such as hematomas or hemorrhage have been localized. We report a case in which unsuspected femoral deep venous thrombosis was diagnosed on an (/sup 111/In)WBC leukocyte scan performed for detection of osteomyelitis. Readers are advised to avoid interpreting all vascular (/sup 111/In)WBC localization as necessarily infectious. This may be of particular significance in patients with vascular grafts.

  18. Chemical deposition and characterization of copper indium disulphide thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Lokhande, C. D.

    2004-12-01

    A simple chemical deposition method was used to prepare copper indium disulphide thin films. The method is based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water. In the present investigation, CuInS 2 films have been deposited using chemical deposition method. These films were characterized for their structural, surface morphological, compositional and electrical properties by using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), electrical resistivity and thermoemf measurement techniques.

  19. Liquid phase synthesis of copper indium diselenide nanoparticles

    SciTech Connect

    Jakhmola, Priyanka; Agarwal, Garima; Jha, Prafulla K.; Bhatnagar, S. P.

    2014-04-24

    Nanoparticles of Copper Indium diselenide (CuInSe{sub 2}), belongs to I-III-VI{sub 2} family has been synthesized via liquid phase route using ethylenediamine as a solvent. Characterization of as-grown particles is done by XRD, HRTEM, DLS, optical microscopy and UV-Vis spectroscopy. X-ray diffraction pattern confirmed that the CuInSe2 nanoparticles obtained reveals chalcopyrite structure. Particle size evaluated from dynamic light scattering of as grown particle possessing radius of 90 nm. The bandgap of 1.05eV is obtained from UV-Vis spectrum which will applicable to the solar cell devices.

  20. Indium phosphide solar cells for laser power beaming applications

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Lasers can be used to transmit power to photovoltaic cells. Solar cell efficiencies are enhanced significantly under monochromatic light, and therefore a laser beam of proper wavelength could be a very effective source of illumination for a solar array operating at very high efficiencies. This work reviews the modeling studies made on indium phosphide solar cells for such an application. These cells are known to be very radiation resistant and have a potential for high efficiency. Effects of cell series resistance, laser intensity, and temperature on cell performance have been discussed.

  1. Study of indium tin oxide films exposed to atomic axygen

    NASA Technical Reports Server (NTRS)

    Snyder, Paul G.; De, Bhola N.; Woollam, John A.; Coutts, T. J.; Li, X.

    1989-01-01

    A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

  2. Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

    SciTech Connect

    Tripathi, Madhvendra Nath

    2015-06-24

    Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

  3. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering.

    PubMed

    Heo, Young-Woo; Pearton, S J; Norton, D P

    2012-04-01

    We investigated the size-dependent electrical conductivities of indium zinc oxide stripes with different widths from 50 nm to 4 microm and with the same thickness of 50 nm deposited by RF magnetron sputtering. The size of the indium zinc oxide stripes was controlled by e-beam lithography. The distance of the two Ti/Au Ohmic electrodes along the indium zinc oxide stripes was kept constant at 25 microm. The electrical conductivity decreased as the size of the indium zinc oxide stripes decreased below a critical width (80 nm). The activation energy, derived from the electric conductivity versus temperature measurement, was dependent on the dimensions of indium zinc oxide stripes. These results can be understood as stemming from surface charge trapping from the absorption of oxygen and/or water vapor, which leads to an increase in the energy difference between the conduction energy band and the Fermi energy. PMID:22849102

  4. Anti-reflective conducting indium oxide layer on nanostructured substrate as a function of aspect ratio

    NASA Astrophysics Data System (ADS)

    Park, Hyun-Woo; Ji, Seungmuk; Lim, Hyuneui; Choi, Dong-won; Park, Jin-Seong; Chung, Kwun-Bum

    2016-09-01

    Antireflective conducting indium oxide layers were deposited using atomic layer deposition on a transparent nanostructured substrate grown using colloidal lithography. In order to explain the changes in the electrical resistivity and the optical transmittance of conducting indium oxide layers depending on various aspect ratios of the nanostructured substrates, we investigated the surface area and refractive index of the indium oxide layers in the film depth direction as a function of aspect ratio. The conformal indium oxide layer on a transparent nanostructured substrate with optimized geometry exhibited transmittance of 88% and resistivity of 7.32 × 10-4 Ω cm. The enhancement of electrical resistivity is strongly correlated with the surface area of the indium oxide layer depending on the aspect ratio of the nanostructured substrates. In addition, the improvement in transparency was explained by the gradual changes of the refractive index in the film depth direction according to the aspect ratio of the nanostructures.

  5. Recycling indium from waste liquid crystal display panel by vacuum carbon-reduction.

    PubMed

    He, Yunxia; Ma, En; Xu, Zhenming

    2014-03-15

    This study investigated the recovery of indium from waste liquid crystal display (LCD) panel using vacuum carbon-reduction. First of all, high purity In2O3 was investigated. The results indicated that indium can be reclaimed from In2O3 using vacuum carbon-reduction in thermodynamics and dynamics. The conditions of 1223K, 50wt% carbon addition, 30min, and 1Pa were confirmed as the optimal conditions for pure In2O3 and high purity indium could be selectively recovered on condensing zone. Based on this, the experiment of the recovery of indium from waste LCD power was performed. The best parameters were confirmed as 1223K and 1Pa with 30wt% carbon addition for 30min. The recovery rate of indium from LCD powder could reach to 90wt%. No hazardous materials produced in this process. Therefore, this technique provides the possibility of reutilization of LCD in an environmentally friendly way.

  6. Limitations of indium leukocyte imaging for the diagnosis of spine infections

    SciTech Connect

    Whalen, J.L.; Brown, M.L.; McLeod, R.; Fitzgerald, R.H. Jr. )

    1991-02-01

    The usefulness of indium-111 white blood cell (WBC) scintigraphy in the detection of spine sepsis was studied in 22 patients who had open or percutaneous biopsies for microbiologic diagnosis. The indium images in 18 patients with vertebral infection were falsely negative in 15 (83%) and truly positive in 3 (17%). All four patients with negative cultures and histology had true-negative scans. The indium-111 WBC imaging results yielded a sensitivity of 17%, a specificity of 100%, and an accuracy rate of 31%. Prior antibiotic therapy was correlated with a high incidence of false-negative scans and photon-deficient indium-111 WBC uptake. The usefulness of indium-111 WBC scintigraphy for the diagnosis of vertebral infection may be limited to those patients who have not been treated with antibiotics previously.

  7. The study of selective heating of indium bump in MCT infrared focal plane array

    NASA Astrophysics Data System (ADS)

    Zhang, Haiyan; Cao, Lan; Zhuang, Fulong; Hu, Xiaoning; Gong, Haimei

    2012-10-01

    Generally the electrical interconnectivity between The Mercury Cadmium Telluride (MCT) infrared focal plane array (IRFPA) device and circuit takes the flip chip technology using indium bump as a connection medium. In order to improve the reliability of the interconnectivity indium melting is a common packaging technique at present. This technique is called reflow soldering. The heating is transferred to the indium bump by heating the device and circuit. This heating process will persist about 10 minutes resulting in the MCT material going through a 10 minutes high temperature baking course. This baking process will strongly degenerate the characteristic of the MCT device. Under this circumstance this article gives a new heating technique for indium bump which is call induction heating melting technique. This method realizes the selective heating. While the indium bump is melted by the conduction heating the semiconductor material such as MCT can't be heated.

  8. Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

    PubMed

    Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

    2016-01-01

    This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

  9. Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

    PubMed

    Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

    2016-01-01

    This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium. PMID:26771526

  10. Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

    2000-01-01

    The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

  11. Stability and crystal chemistry of the ternary borides M2(Ni21-xMx)B6 (M tbnd Ti, Zr, Hf)

    NASA Astrophysics Data System (ADS)

    Artini, C.; Provino, A.; Valenza, F.; Pani, M.; Cacciamani, G.

    2016-01-01

    A crystallochemical study was undertaken to investigate the structural stability and the compositional extent of the ternary borides M2(Ni21-xMx)B6 (M tbnd Ti, Zr, Hf). This phase often occurs during the production of MB2 joints by means of Ni-B brazing alloys. Samples with the nominal compositions M2Ni21B6 and M3Ni20B6 were synthesized by arc melting and characterized by optical and electron microscopy, and X-ray diffraction. Crystal structure refinements were performed by the Rietveld method. The compositional boundaries of the ternary phases were experimentally determined and found strictly related to the M/Ni size ratio. The stability of this structure is mainly determined by the capability of the structure to expand under the effect of the Ni substitution by the M atom. The CALPHAD modeling of the three M-Ni-B ternary systems in the Ni-rich corner of the phase diagram, performed on the basis of the obtained structural data, shows a good agreement with experimental results.

  12. Microstructural Characterization and Wear Behavior of Nano-Boride Dispersed Coating on AISI 304 Stainless Steel by Hybrid High Velocity Oxy-Fuel Spraying Laser Surface Melting

    NASA Astrophysics Data System (ADS)

    Sharma, Prashant; Majumdar, Jyotsna Dutta

    2015-07-01

    The current study concerns the detailed microstructural characterization and investigation of wear behavior of nano-boride dispersed coating developed on AISI 304 stainless steel by high velocity oxy-fuel spray deposition of nickel-based alloy and subsequent laser melting. There is a significant refinement and homogenization of microstructure with improvement in microhardness due to laser surface melting (1200 VHN as compared to 945 VHN of as-sprayed and 250 VHN of as-received substrate). The high temperature phase stability of the as-coated and laser melted surface has been studied by differential scanning calorimeter followed by detailed phase analysis at room and elevated temperature. There is a significant improvement in wear resistance of laser melted surface as compared to as-sprayed and the as-received one due to increased hardness and reduced coefficient of friction. The mechanism of wear has been investigated in details. Corrosion resistance of the coating in a 3.56 wt pct NaCl solution is significantly improved (4.43 E-2 mm/year as compared to 5 E-1 mm/year of as-sprayed and 1.66 mm/year of as-received substrate) due to laser surface melting as compared to as-sprayed surface.

  13. Field-effect transistors based on cubic indium nitride

    PubMed Central

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-01-01

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics. PMID:24492240

  14. Field-effect transistors based on cubic indium nitride.

    PubMed

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-02-04

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.

  15. Absorption of ac fields in amorphous indium-oxide films

    SciTech Connect

    Ovadyahu, Z.

    2014-08-20

    Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (In{sub x}O) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In{sub 2}O{sub 3−x}) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

  16. Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Babu, S. Harinath; Kaleemulla, S.; Rao, N. Madhusudhana; Krishnamoorthi, C.

    2016-10-01

    The optical and electrical properties are the two important dimensions of Indium oxide and its derivatives (indium tin oxide) and were well studied to understand the origin of wide electronic band gap and high electrical conductivity at room temperature. In2O3 and its derivatives find many applications in electronic and optoelectronic domains based on the above properties. The recent discovery of ferromagnetism in In2O3 at room temperature become a third dimension and lead to intensive research on enhancement of ferromagnetic strength by various means such as dopants and synthesis protocols and extrinsic parameters. The research lead to enormous experimental data and theoretical models proliferation over the past one decade with diverse insights into the origin of ferromagnetism in In2O3 based dilute magnetic semiconductors. The experimental data and theoretical models of ferromagnetism in In2O3 has been thoroughly surveyed in the literature and compiled all the data and presented for easy of understanding in this review. We have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review.

  17. Photoluminescence of monovalent indium centres in phosphate glass

    PubMed Central

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL and X-ray absorption fine structure (XAFS) analysis. Three absorption bands in the UV region are attributed to the In+ centre: two weak forbidden bands (1S0 → 3P1, 1S0 → 3P2) and a strong allowed band (1S0 → 1P1). The strongest PL excitation band cannot be attributed to the conventional allowed transition to the singlet excited state. Emission decay of the order of microseconds suggests that radiative relaxation occurs from the triplet excitation state. The XAFS analysis suggests that these In+ species have shorter In–O distances with lower coordination numbers than in In2O3. These results clearly demonstrate that In+ exists in a metastable amorphous network, which is the origin of the observed luminescent properties.

  18. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    NASA Astrophysics Data System (ADS)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  19. Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body.

    PubMed

    Amano, Takaaki; Sarinont, Thapanut; Koga, Kazunori; Hirata, Miyuki; Tanaka, Akiyo; Shiratani, Masaharu

    2015-11-01

    Nanoparticles have great potential for medical applications such as cancer therapy, whereas their toxic effects on human body are pointed out. To study kinetics and toxicity of nanoparticles in living body, we synthesized indium-containing nanoparticles in aqueous suspension using pulsed electrical discharge plasmas in water, because no indium compounds exist in the living body in the normal situation and hence indium-containing nanoparticles are useful tracer materials for analyzing kinetics of nanoparticles in living body. The mean size of synthesized primary nanoparticles is 7 nm, whereas the mean size of secondary nanoparticles is 315 nm. EDX and XRD analysis reveal that nanoparticles are indium crystalline and indium hydroxide crystalline with the mass ratio of 8:2. Preliminary subcutaneous administration of nanoparticles to mice shows that indium is transported from subcutaneous to blood. These results show that synthesized indium-containing nanoparticles are useful for analyzing kinetics of nanoparticles in living body. PMID:26726686

  20. Synthesis of Indium-Containing Nanoparticles in Aqueous Suspension Using Plasmas in Water for Evaluating Their Kinetics in Living Body.

    PubMed

    Amano, Takaaki; Sarinont, Thapanut; Koga, Kazunori; Hirata, Miyuki; Tanaka, Akiyo; Shiratani, Masaharu

    2015-11-01

    Nanoparticles have great potential for medical applications such as cancer therapy, whereas their toxic effects on human body are pointed out. To study kinetics and toxicity of nanoparticles in living body, we synthesized indium-containing nanoparticles in aqueous suspension using pulsed electrical discharge plasmas in water, because no indium compounds exist in the living body in the normal situation and hence indium-containing nanoparticles are useful tracer materials for analyzing kinetics of nanoparticles in living body. The mean size of synthesized primary nanoparticles is 7 nm, whereas the mean size of secondary nanoparticles is 315 nm. EDX and XRD analysis reveal that nanoparticles are indium crystalline and indium hydroxide crystalline with the mass ratio of 8:2. Preliminary subcutaneous administration of nanoparticles to mice shows that indium is transported from subcutaneous to blood. These results show that synthesized indium-containing nanoparticles are useful for analyzing kinetics of nanoparticles in living body.

  1. Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

    NASA Astrophysics Data System (ADS)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T.; Symietz, C.; Bonse, J.; Andree, S.; Krüger, J.; Heidmann, B.; Schmid, M.; Lux-Steiner, M.

    2016-03-01

    A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

  2. Dissolution Behavior of Indium in CaO-SiO2-Al2O3 Slag

    NASA Astrophysics Data System (ADS)

    Ko, Kyu Yeol; Park, Joo Hyun

    2011-12-01

    The solubility of indium in a molten CaO-SiO2-Al2O3 system was measured at 1773 K (1500 °C) to establish the dissolution mechanism of indium under a highly reducing atmosphere. The solubility of indium increases with increasing oxygen potential, whereas it decreases with increased activity of basic oxide. Therefore, a dissolution mechanism of indium can be constructed according to the following equation: {{In}}({{s}}) + 1/4{{O}}2 ({{g}}) = ({{In}}^{ + } ) + 1/2({{O}}^{2 - } ) The relationship between indium capacity and sulfide capacity shows a good correlation that is consistent with theoretical expectations. The enthalpy change of the indium dissolution reaction is negative, which indicates that the dissolution is an exothermic reaction. The heat of dissolution into high-silica melts is greater than that into low-silica melts. The solubility of indium is strongly dependent on the silica content. The activity coefficient, and thus the excess free energy of In2O, decreases linearly with increasing silica content, indicating that the In2O is believed to behave as a weak basic oxide in the current CaO-SiO2-Al2O3 ternary system under reducing conditions.

  3. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    PubMed

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells.

  4. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    PubMed

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells. PMID:27483886

  5. Optimizing galvanic pulse plating parameters to improve indium bump to bump bonding

    NASA Astrophysics Data System (ADS)

    Coleman, Jonathan J.; Rowen, Adam; Mani, Seethambal S.; Yelton, W. Graham; Arrington, Christian; Gillen, Rusty; Hollowell, Andrew E.; Okerlund, Daniel; Ionescu, Adrian

    2010-02-01

    The plating characteristics of a commercially available indium plating solution are examined and optimized to help meet the increasing performance demands of integrated circuits requiring substantial numbers of electrical interconnections over large areas. Current fabrication techniques rely on evaporation of soft metals, such as indium, into lift-off resist profiles. This becomes increasingly difficult to accomplish as pitches decrease and aspect ratios increase. To minimize pixel dimensions and maximize the number of pixels per unit area, lithography and electrochemical deposition (ECD) of indium has been investigated. Pulse ECD offers the capability of improving large area uniformity ideal for large area device hybridization. Electrochemical experimentation into lithographically patterned molds allow for large areas of bumps to be fabricated for low temperature indium to indium bonds. The galvanic pulse profile, in conjunction with the bath configuration, determines the uniformity of the plated array. This pulse is manipulated to produce optimal properties for hybridizing arrays of aligned and bonded indium bumps. The physical properties of the indium bump arrays are examined using a white light interferometer, a SEM and tensile pull testing. This paper provides details from the electroplating processes as well as conclusions leading to optimized plating conditions.

  6. Design rule of indium bump in infrared focal plane array for longer cycling life

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoling; Meng, Chao; Zhang, Wei; Lv, Yanqiu; Si, Junjie; Meng, Qingduan

    2016-05-01

    In light of the proposed equivalent method, a three-dimensional structural modeling of InSb infrared focal plane arrays (IRFPAs) is created, and the simulated strain distribution is identical to the deformation distribution on the top surface of InSb IRFPAs. After comparing the deformation features at different regions with the structural characteristics of IRFPAs, we infer that the flatness of InSb IRFPAs will be improved with a thinner indium bump array, and this inference is verified by subsequent simulation results. That is, when the diameter of indium bump is smaller than 20 μm, the simulated Z-components of strain on the whole top surface of InSb IRFPAs is uniform, and the deformation amplitude is small. When the diameter of indium bump is larger than 28 μm, the simulated Z-components of strain increases rapidly with the thicker indium bump, and the flatness of InSb IRFPAs is worsened rapidly. According to the changing trend of deformation amplitude with diameters of indium bump, and employing element pitches normalization method, a design rule of indium bump is proposed. That is, when the diameter of indium bump is shorter than 0.4 times the element pitch, the flatness of InSb IRFPAs is in an acceptable range. This design rule was supported by different IRFPAs with different formats delivered by several main research groups for achieving a longer cycling life.

  7. Indium 111-labeled white blood cell scans after vascular prosthetic reconstruction

    SciTech Connect

    Sedwitz, M.M.; Davies, R.J.; Pretorius, H.T.; Vasquez, T.E.

    1987-11-01

    The clinical value of indium 111-labeled white blood cell (WBC) scanning done after vascular graft procedures was investigated to differentiate noninfectious postoperative inflammation associated with graft incorporation from early prosthetic graft infection. Indium 111-labeled WBC scans were initially obtained in 30 patients before discharge from the hospital and during the subsequent follow-up period (334 days). Fourteen of 30 patients (47%) had normal predischarge scans that included all 10 patients who had grafts confined to the abdomen and 4 of 20 patients (20%) who had grafts arising or terminating at the femoral arteries (p less than 0.05). Sixteen of 30 patients (53%) discharged with abnormal initial indium 111 WBC scans underwent serial scanning until the scan normalized or a graft complication developed. All of the 16 patients had grafts involving the groin region. Abnormal indium 111 uptake in the femoral region continued for a mean 114 days without the development of prosthetic graft infections. The sensitivity of indium 111-labeled WBC scans for detecting wound complications was 100%, whereas the specificity was 50%. Thus, the accuracy of the test was only 53%. We conclude that (1) abnormal indium 111 WBC scans are common after graft operations involving the groin region but are unusual after vascular procedures confined to the abdomen, and (2) in the absence of clinical suspicion, the indium 111-labeled WBC scan does not reliably predict prosthetic graft infection because of the low specificity of the test in the early postoperative period.

  8. Tracking Indium Emissions to the Atmosphere in the Northeastern United States

    NASA Astrophysics Data System (ADS)

    White, S. O.; Hemond, H.

    2010-12-01

    Indium is an important metal whose production is increasing dramatically due to new uses in the rapidly growing electronics, photovoltaic, and LED industries. Little is known, however, about the natural or industrial cycling of indium or its environmental behavior. Industrial emissions of indium to the atmosphere are already larger than natural emissions. A review of the literature suggests that mining and coal burning are the primary industrial sources of indium to the atmosphere, while releases from the semiconductor and electronics industries are small at present. This scenario may change with the rapid growth of indium use in electronics and semiconductor industries. In order to determine the concentration of indium in the atmosphere and the natural and anthropogenic sources that contribute to its present concentration, we have measured indium in atmospheric particulate matter in the Northeastern United States. Samples collected every 6th day during 1995 in five different locations from Boston, MA to Rochester, NY showed significant differences between the sample locations and over the course of the year. Using NOAA’s Hybrid Single-Particle Lagrangian Integrated Trajectory (HYSPLIT) model, we have used atmospheric back trajectory analyses to constrain the sources of the indium peaks measured. The back trajectory analysis suggests that the highest indium concentrations come from the north, while lower concentrations are seen in air traveling from the midwestern United States. Together with emissions data for mines, smelters, metal refineries, and coal plants, this approach can be a useful tool for constraining the source of atmospheric pollutants to a particular region, and for confirming the emissions estimates for specific regions.

  9. Indium-111-labeled leukocyte localization in hematomas: a pitfall in abscess detection

    SciTech Connect

    Wing, V.W.; vanSonnenberg, E.; Kipper, S.; Bieberstein, M.P.

    1984-07-01

    Indium-111-labeled white-blood-cell scanning is a useful modality in abscess detection and has replaced gallium scanning in many institutions. Sensitivities of 72% to 90% and specificities of 90% to 100% have been reported. In searching for abscesses seven cases of indium-111-labeled leukocyte uptake were encountered in collections subsequently proved to be noninfected hematomas. Abundant red blood cells with few or no white blood cells, no bacteria, and a benign clinical course identified these noninfected hematomas. Five of the patients were being treated with hemodialysis and three were recent allograft recipients. The results indicate some limitation and nonspecificity in indium-111 scanning, despite its many benefits.

  10. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A.

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  11. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOEpatents

    Seager, Carleton H.; Evans, Jr., Joseph Tate

    1998-01-01

    A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

  12. Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

    SciTech Connect

    Kozhukhov, Anton; Volodin, Vladimir; Klimenko, Anatoliy; Shcheglov, Dmitriy; Karnaeva, Natalya; Latyshev, Alexander

    2015-04-14

    In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 × 10{sup −3} to 4 × 10{sup −2} Ω cm.

  13. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

    DOEpatents

    Seager, C.H.; Evans, J.T. Jr.

    1998-11-24

    A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

  14. Indium phosphide solar cells - Recent developments and estimated performance in space

    NASA Technical Reports Server (NTRS)

    Weinberg, Irving; Brinker, David J.

    1990-01-01

    The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

  15. Transport properties of superconducting high indium-doped SnTe single crystals

    NASA Astrophysics Data System (ADS)

    Zhang, Cheng; Zhong, Ruidan; Gu, Genda; Li, Qiang

    The discovery of topological crystalline insulator SnTe has ignited a search for the predicted topological superconductors. Recently, we performed the transport measurement on a series of indium-doped SnTe single crystals (Sn1-xInxTe). Hall measurement shows that carrier type changes when indium doping level is between x = 0.2 and 0.3. Weak anti-localization effect and Shubnikov-de Hass oscillations was found in x = 0.45 samples, which have the highest superconducting transition temperature at 4.5 K. Both superconducting and normal state properties of high indium-doped SnTe will be discussed.

  16. Rapid thermal annealing of indium phosphide compound semiconductors

    NASA Technical Reports Server (NTRS)

    Biedenbender, Michael D.; Kapoor, Vik J.; Williams, W. D.

    1987-01-01

    The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

  17. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    DOE PAGES

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). Thesemore » ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.« less

  18. Infrared plasmonics with indium-tin-oxide nanorod arrays.

    PubMed

    Li, Shi Qiang; Guo, Peijun; Zhang, Lingxiao; Zhou, Wei; Odom, Teri W; Seideman, Tamar; Ketterson, John B; Chang, Robert P H

    2011-11-22

    This article reports the study of infrared plasmonics with both random and periodic arrays of indium-tin-oxide (ITO) nanorods (NR). A description is given on the synthesis, patterning, and characterization of physical properties of the ITO NR arrays. A classical scattering model, along with a 3-D finite-element-method and a 3-D finite-difference-time-domain numerical simulation method has been used to interpret the unique light scattering phenomena. It is also shown that the intrinsic plasma frequency can be varied through careful postsynthesis processing of the ITO NRs. Examples are given on how coupled plasmon resonances can be tuned through patterning of the ITO NR arrays. In addition, environment dielectric sensing has been demonstrated through the shift of the resonances as a result of index change surrounding the NRs. These initial results suggest potential for further improvement and opportunities to develop a good understanding of infrared plasmonics using ITO and other transparent conducting oxide semiconducting materials.

  19. Tunable morphologies of indium tin oxide nanostructures using nanocellulose templates

    SciTech Connect

    Aytug, Tolga; Meyer, III, Harry M.; Ozcan, Soydan; Lu, Yuan; Poole, II, Joseph E.

    2015-01-01

    Metal oxide nanostructures have emerged as an important family of materials for various device applications. The performance is highly dependent on the morphology of the metal oxide nanostructures. Here we report a completely green approach to prepare indium tin oxide (ITO) nanoparticles using only water and cellulose nanofibril (CNF) in addition to the ITO precursor. Surface hydroxyl groups of the CNFs allow for efficient conjugation of ITO precursors (e.g., metal ions) in aqueous solution. The resulting CNF film allows for controllable spatial arrangement of metal oxide precursors, which results in tunable particle morphology (e.g., nanowires, nanospheres, and octahedral nanoparticles). These ITO nanoparticles can also form conductive and transparent ITO films. This study opens a new perspective on developing metal oxide nanostructures.

  20. Synthesis of indium sulphide quantum dots in perfluoronated ionomer membrane

    SciTech Connect

    Sumi, R.; Warrier, Anita R.; Vijayan, C.

    2014-01-28

    In this paper, we demonstrate a simple and efficient method for synthesis of β-indium sulphide (In{sub 2}S{sub 3}) nanoparticles embedded in an ionomer matrix (nafion membrane). The influence of reaction temperature on structural, compositional and optical properties of these films were analysed using X-Ray Diffraction, EDAX, UV-Vis absorption spectroscopy and photoluminescence studies. Average particle diameter was estimated using modified effective mass approximation method. Absorption spectra of In{sub 2}S{sub 3} nanoparticles show blue shift compared to bulk In{sub 2}S{sub 3}, indicating strong quantum size confinement effects. PL emission in the wavelength range 530–600 nm was recorded using a 488 nm line from an Ar{sup +} laser as the excitation source.

  1. History of ``NANO''-Scale VERY EARLY Solid-State (and Liquid-State) Physics/Chemistry/Metallurgy/ Ceramics; Interstitial-Alloys Carbides/Nitrides/Borides/...Powders and Cermets, Rock Shocks, ...

    NASA Astrophysics Data System (ADS)

    Maiden, Colin; Siegel, Edward

    History of ``NANO'': Siegel-Matsubara-Vest-Gregson[Mtls. Sci. and Eng. 8, 6, 323(`71); Physica Status Solidi (a)11,45(`72)] VERY EARLY carbides/nitrides/borides powders/cermets solid-state physics/chemistry/metallurgy/ ceramics FIRST-EVER EXPERIMENTAL NANO-physics/chemistry[1968 ->Physica Status Solidi (a)11,45(`72); and EARLY NANO-``physics''/NANO-``chemistry'' THEORY(after: Kubo(`62)-Matsubara(`60s-`70s)-Fulde (`65) [ref.: Sugano[Microcluster-Physics, Springer('82 `98)

  2. Crystal structures and compressibility of novel iron borides Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} synthesized at high pressure and high temperature

    SciTech Connect

    Bykova, E.; Gou, H.; Bykov, M.; Hanfland, M.; Dubrovinsky, L.; Dubrovinskaia, N.

    2015-10-15

    We present here a detailed description of the crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} with various iron content (x=1.01(1), 1.04(1), 1.32(1)), synthesized at high pressures and high temperatures. As revealed by high-pressure single-crystal X-ray diffraction, the structure of Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds, which make it as stiff as diamond in one crystallographic direction. The volume compressibility of Fe{sub 2}B{sub 7} (the bulk modulus K{sub 0}= 259(1.8) GPa, K{sub 0}′= 4 (fixed)) is even lower than that of FeB{sub 4} and comparable with that of MnB{sub 4}, known for high bulk moduli among 3d metal borides. Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B, in which Fe atoms occupy an interstitial position. Fe{sub x}B{sub 50} does not show considerable anisotropy in the elastic behavior. - Graphical abstract: Crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} (x=1.01(1), 1.04(1), 1.32(1)). - Highlights: • Novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50}, were synthesized under HPHT conditions. • Fe{sub 2}B{sub 7} has a unique orthorhombic structure (space group Pbam). • Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds that results in high bulk modulus. • Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B composed of B{sub 12} icosahedra. • In Fe{sub x}B{sub 50} intraicosahedral bonds are stiffer than intericosahedral ones.

  3. Macro- and microscopic properties of strontium doped indium oxide

    SciTech Connect

    Nikolaenko, Y. M.; Kuzovlev, Y. E.; Medvedev, Y. V.; Mezin, N. I.; Fasel, C.; Gurlo, A.; Schlicker, L.; Bayer, T. J. M.; Genenko, Y. A.

    2014-07-28

    Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In{sub 2}O{sub 3}:(SrO){sub x} were investigated for materials with different doping levels at different temperatures (T = 20–300 °C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x = 10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn{sub 2}O{sub 4}. An unusual property of high level (x = 10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100–200 °C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3 × 10{sup −13} cm{sup 2}/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

  4. Photoconductivity in reactively evaporated copper indium selenide thin films

    SciTech Connect

    Urmila, K. S. Asokan, T. Namitha Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

    2014-01-28

    Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup −5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 10{sup 6} cm{sup −1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

  5. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments. PMID:24245331

  6. New ternary tantalum borides containing boron dumbbells: Experimental and theoretical studies of Ta2OsB2 and TaRuB

    NASA Astrophysics Data System (ADS)

    Mbarki, Mohammed; Touzani, Rachid St.; Rehorn, Christian W. G.; Gladisch, Fabian C.; Fokwa, Boniface P. T.

    2016-10-01

    The new ternary transition metal-rich borides Ta2OsB2 and TaRuB have been successfully synthesized by arc-melting the elements in a water-cooled crucible under an argon atmosphere. The crystal structures of both compounds were solved by single-crystal X-ray diffraction and their metal compositions were confirmed by EDX analysis. It was found that Ta2OsB2 and TaRuB crystallize in the tetragonal Nb2OsB2 (space group P4/mnc, no. 128) and the orthorhombic NbRuB (space group Pmma, no. 51) structure types with lattice parameters a=5.878(2) Å, c=6.857(2) Å and a=10.806(2) Å, b=3.196(1) Å, c=6.312(2) Å, respectively. Furthermore, crystallographic, electronic and bonding characteristics have been studied by density functional theory (DFT). Electronic structure relaxation has confirmed the crystallographic parameters while COHP bonding analysis indicates that B2-dummbells are the strongest bonds in both compounds. Moreover, the formation of osmium dumbbells in Ta2OsB2 through a Peierls distortion along the c-axis, is found to be the origin of superstructure formation. Magnetic susceptibility measurements reveal that the two phases are Pauli paramagnets, thus confirming the theoretical DOS prediction of metallic character. Also hints of superconductivity are found in the two phases, however lack of single phase samples has prevented confirmation. Furthermore, the thermodynamic stability of the two modifications of AMB (A=Nb, Ta; M =Ru, Os) are studied using DFT, as new possible phases containing either B4- or B2-units are predicted, the former being the most thermodynamically stable modification.

  7. Ternary borides Nb7Fe3B8 and Ta7Fe3B8 with Kagome-type iron framework.

    PubMed

    Zheng, Qiang; Gumeniuk, Roman; Borrmann, Horst; Schnelle, Walter; Tsirlin, Alexander A; Rosner, Helge; Burkhardt, Ulrich; Reissner, Michael; Grin, Yuri; Leithe-Jasper, Andreas

    2016-06-21

    Two new ternary borides TM7Fe3B8 (TM = Nb, Ta) were synthesized by high-temperature thermal treatment of samples obtained by arc-melting. This new type of structure with space group P6/mmm, comprises TM slabs containing isolated planar hexagonal [B6] rings and iron centered TM columns in a Kagome type of arrangement. Chemical bonding analysis in Nb7Fe3B8 by means of the electron localizability approach reveals two-center interactions forming the Kagome net of Fe and embedded B, while weaker multicenter bonding present between this net and Nb atoms. Magnetic susceptibility measurements reveal antiferromagnetic order below TN = 240 K for Nb7Fe3B8 and TN = 265 K for Ta7Fe3B8. Small remnant magnetization below 0.01μB per f.u. is observed in the antiferromagnetic state. The bulk nature of the magnetic transistions was confirmed by the hyperfine splitting of the Mössbauer spectra, the sizable anomalies in the specific heat capacity, and the kinks in the resistivity curves. The high-field paramagnetic susceptibilities fitted by the Curie-Weiss law show effective paramagnetic moments μeff≈ 3.1μB/Fe in both compounds. The temperature dependence of the electrical resistivity also reveals metallic character of both compounds. Density functional calculations corroborate the metallic behaviour of both compounds and demonstrate the formation of a sizable local magnetic moment on the Fe-sites. They indicate the presence of both antiferro- and ferrromagnetic interactions.

  8. An evaluation of the potential yield of indium recycled from end-of-life LCDs: A case study in China.

    PubMed

    Wang, Hengguang; Gu, Yifan; Wu, Yufeng; Zhang, Yi-Nan; Wang, Wei

    2015-12-01

    With the advances in electronics and information technology, China has gradually become the largest consumer of household appliances (HAs). Increasingly, end-of-life (EOL) HAs are generated in China. EOL recycling is a promising strategy to reduce dependence on virgin production, and indium is one of the recycled substances. The potential yield of indium recycling has not been systematically evaluated in China thus far. This paper estimates the potential yield of recycled indium from waste liquid crystal displays (LCDs) in China during the period from 2015 to 2030. The quantities of indium that will be used to produce LCDs are also predicted. The estimates focus on the following three key LCD waste sources: LCD TVs, desktop computers and portable computers. The results show that the demand for indium will be increasing in the near future. It is expected that 350 tonnes of indium will be needed to produce LCDs in China in 2035. The indium recycled from EOL LCDs, however, is much less than the demand and only accounts for approximately 48% of the indium demand. The sustainable index of indium is always less than 0.5. Therefore, future indium recycling efforts should focus on the development of recycling technology and the improvement of the relevant policy.

  9. An evaluation of the potential yield of indium recycled from end-of-life LCDs: A case study in China.

    PubMed

    Wang, Hengguang; Gu, Yifan; Wu, Yufeng; Zhang, Yi-Nan; Wang, Wei

    2015-12-01

    With the advances in electronics and information technology, China has gradually become the largest consumer of household appliances (HAs). Increasingly, end-of-life (EOL) HAs are generated in China. EOL recycling is a promising strategy to reduce dependence on virgin production, and indium is one of the recycled substances. The potential yield of indium recycling has not been systematically evaluated in China thus far. This paper estimates the potential yield of recycled indium from waste liquid crystal displays (LCDs) in China during the period from 2015 to 2030. The quantities of indium that will be used to produce LCDs are also predicted. The estimates focus on the following three key LCD waste sources: LCD TVs, desktop computers and portable computers. The results show that the demand for indium will be increasing in the near future. It is expected that 350 tonnes of indium will be needed to produce LCDs in China in 2035. The indium recycled from EOL LCDs, however, is much less than the demand and only accounts for approximately 48% of the indium demand. The sustainable index of indium is always less than 0.5. Therefore, future indium recycling efforts should focus on the development of recycling technology and the improvement of the relevant policy. PMID:26277718

  10. Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

    SciTech Connect

    Rajammal, R.; Savarimuthu, E. Arumugam, S.

    2014-04-24

    The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10{sup −4}Ω cm and a maximum carrier concentration of 1.20×10{sup 20}cm{sup −3} have been realized.

  11. Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

    NASA Astrophysics Data System (ADS)

    Jia, Ye; Wallace, Joshua S.; Qin, Yueling; Gardella, Joseph A.; Dabiran, Amir M.; Singisetti, Uttam

    2016-04-01

    In this letter, we report the band offset characterization of the atomic layer deposited aluminum oxide on non-polar m-plane indium nitride grown by plasma-assisted molecular beam epitaxy by using x-ray photoelectron spectroscopy. The valence band offset between aluminum oxide and m-plane indium nitride was determined to be 2.83 eV. The Fermi level of indium nitride was 0.63 eV above valence band maximum, indicated a reduced band bending in comparison to polar indium nitride. The band gap of aluminum oxide was found to be to 6.7 eV, which gave a conduction band offset of 3.17 eV.

  12. Optimal design study of high efficiency indium phosphide space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

  13. Dinucleating Ligand Platforms Supporting Indium and Zinc Catalysts for Cyclic Ester Polymerization.

    PubMed

    Kremer, Alexandre B; Osten, Kimberly M; Yu, Insun; Ebrahimi, Tannaz; Aluthge, Dinesh C; Mehrkhodavandi, Parisa

    2016-06-01

    The synthesis of the first alkoxide-bridged indium complex supported by a chiral dinucleating ligand platform (1), along with its zinc analogue (2), is reported. Both complexes are synthesized in a one-pot reaction starting from a chiral dinucleating bis(diamino)phenolate ligand platform, sodium ethoxide, and respective metal salts. The dinucleating indium analogue (7) based on an achiral ligand backbone is also reported. Indium complexes bearing either the chiral or achiral ligand catalyze the ring-opening polymerization of racemic lactide (rac-LA) to afford highly heterotactic poly(lactic acid) (PLA; Pr > 0.85). The indium complex bearing an achiral ligand affords essentially atactic PLA from meso-LA. The role of the dinucleating ligand structure in catalyst synthesis and polymerization activity is discussed. PMID:27187767

  14. Hydrometallurgical Recovery of Indium from Flat-Panel Displays of Spent Liquid Crystal Televisions

    NASA Astrophysics Data System (ADS)

    Inoue, Katsutoshi; Alam, Shafiq

    2015-02-01

    A recovery process for indium from waste liquid crystal display panels was developed on the basis of hydrometallurgical technology. The powdered sample was leached with 3 M HCl to extract its various metal constituents (indium, aluminum, tin, etc.). The mutual separation and subsequent recovery of the dissolved metals was achieved using two column adsorption tests: The first column was packed with a porous resin impregnated with Aliquat 336, a commercially available solvent extraction reagent based on a quaternary ammonium compound, and the resin contained in the second column was impregnated with Cyanex 923, also a commercially available solvent extraction reagent based on trialkylphosphine oxide. In the first column, tin, iron, and zinc were removed from the leach liquor. In the second column, only indium was selectively recovered. The metal ions trapped in these columns were eluted with 0.1 M H2SO4, yielding a solution purified indium solution with a concentration 10 times that of the feed solution.

  15. Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

  16. Optically- and Electrically-Stimulated Terahertz Radiation Emission from Indium Nitride

    NASA Astrophysics Data System (ADS)

    Wilke, Ingrid; Ding, Yujie J.; Shubina, Tatiana V.

    2012-06-01

    Indium nitride is a novel narrow band gap semiconductor. The material is a potential strong source of terahertz frequency electromagnetic radiation with applications in time-domain terahertz spectroscopy and imaging systems. This article reviews recent experimental research on terahertz emission from the binary compound semiconductor indium nitride excited by near-infrared laser beams or microseconds electrical pulses. Advantages of indium nitride as terahertz radiation source material are discussed. It is demonstrated that different mechanisms contribute to the emission of terahertz radiation from indium nitride. The emission of up to 2.4 μW of THz radiation power is observed when InN is excited with near-infrared femtosecond laser pulses at an average power of 1 W.

  17. Indium bump array fabrication on small CMOS circuit for flip-chip bonding

    NASA Astrophysics Data System (ADS)

    Yuyang, Huang; Yuxiang, Zhang; Zhizhen, Yin; Guoxin, Cui; C, Liu H.; Lifeng, Bian; Hui, Yang; Yaohui, Zhang

    2011-11-01

    We demonstrate a novel method for indium bump fabrication on a small CMOS circuit chip that is to be flip-chip bonded with a GaAs/AlGaAs multiple quantum well spatial light modulator. A chip holder with a via hole is used to coat the photoresist for indium bump lift-off. The 1000 μm-wide photoresist edge bead around the circuit chip can be reduced to less than 500 μm, which ensures the integrity of the indium bump array. 64 × 64 indium arrays with 20 μm-high, 30 μm-diameter bumps are successfully formed on a 5 × 6.5 mm2 CMOS chip.

  18. Growth of copper indium sulphide films by thermal evaporation of mixtures of copper sulphide and indium sulphide powders

    SciTech Connect

    Rao, Pritty; Kumar, Sanjiv Sahoo, N.K.

    2013-08-01

    Graphical abstract: - Highlights: • CuInS{sub 2} films are prepared by resistively heating mixtures of CuS and In{sub 2}S{sub 3}. • As deposited films consist of Cu{sub 7}S{sub 4}, InS and In{sub 2}S{sub 3}. • These species react during vacuum annealing to produce CuInS{sub 2} films. • The films bear stoichiometric or Cu-rich composition. • Their electrical and optical features are conducive for photovoltaic applications. - Abstract: The physical evaporation of a 1:1 mixture of copper sulphide (CuS) and indium sulphide (In{sub 2}S{sub 3}) powders by resistive heating followed by the vacuum annealing of the resulting films at 723 K produces copper indium sulphide (CuInS{sub 2}) films with about 95% phase purity. Composed of sub-micron sized grains, the films bear stoichiometric or Cu-rich composition and are endowed with p-type conductivity, a band gap of about 1.5 eV and an absorption coefficient of about 4 × 10{sup 4} cm{sup −1} in visible region. Mechanistically, the formation of CuInS{sub 2} films takes place as a result of solid state reaction among Cu{sub 7}S{sub 4}, InS and In{sub 2}S{sub 3} in the condensed phase. These intermediate species are produced from the decomposition of CuInS{sub 2} formed in the evaporating mixture due to the reaction between CuS and In{sub 2}S{sub 3}, and excess CuS. Process simplicity and the absence of a sulphurisation step make this approach attractive for synthesising CuInS{sub 2} absorber layers for photovoltaic applications.

  19. Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

    NASA Technical Reports Server (NTRS)

    Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

    1990-01-01

    While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

  20. Ultraflexible polymer solar cells using amorphous zinc-indium-tin oxide transparent electrodes.

    PubMed

    Zhou, Nanjia; Buchholz, Donald B; Zhu, Guang; Yu, Xinge; Lin, Hui; Facchetti, Antonio; Marks, Tobin J; Chang, Robert P H

    2014-02-01

    Polymer solar cells are fabricated on highly conductive, transparent amorphous zinc indium tin oxide (a-ZITO) electrodes. For two representative active layer donor polymers, P3HT and PTB7, the power conversion efficiencies (PCEs) are comparable to reference devices using polycrystalline indium tin oxide (ITO) electrodes. Benefitting from the amorphous character of a-ZITO, the new devices are highly flexible and can be repeatedly bent to a radius of 5 mm without significant PCE reduction. PMID:24123578

  1. Role of TBATB in nano indium oxide catalyzed C-S bond formation

    PubMed Central

    Gogoi, Prasanta; Hazarika, Sukanya; Barman, Pranjit

    2015-01-01

    Nano sized indium oxide is found to be an efficient catalyst for the conversion of thiols to sulfides using Na2CO3 as base and TBATB as reagent in DMSO at 110 °C. Here in situ generation of bromo intermediate by TBATB takes place through indium surface. A variety of aryl sulfides can be synthesized in excellent yields from less reactive chlorides, boronic acids and thiols. PMID:26415729

  2. Indium-doped GaAs: A very dilute alloy system

    NASA Astrophysics Data System (ADS)

    Laurenti, J. P.; Roentgen, P.; Wolter, K.; Seibert, K.; Kurz, H.; Camassel, J.

    1988-03-01

    The influence of indium incorporation in GaAs organometallic-vapor-phase-epitaxy (OMVPE) layers has been investigated in great detail. The results obtained concern the change in band-gap energy, the concentration of residual impurities, and the low-temperature (2-K) photoluminescence (PL) efficiency. For In concentrations ranging between 0 and 6.5×1019 cm-3, both A0X and D0X bound-exciton lines could be resolved. Together with the near-band-gap transitions involving shallow impurities (DA- and eA-related recombination lines), they shift toward lower energies versus indium content. This indicates the formation of a ternary compound Ga1-xInxAs, even at these extremely dilute indium concentrations. After a quantitative calibration of the indium content, linear relations have been found which connect the PL emission line energies and the indium concentration. They make low-temperature PL measurements the most quantitative, and nondestructive, tool for precise composition studies. In this case, care should be taken that the slope parameters are line dependent. For instance, we find a slight, but finite, discrepancy between the slope parameters corresponding to substitutional acceptors on Ga and As sites, respectively. This is discussed in terms of the two different sublattices by using a simple cluster model of 17 atoms. Lastly, we find the absolute PL intensities to increase versus indium concentration: This indicates an improvement in the optical quality of our samples. Since, on a relative scale, the PL signals involving ZnGa and/or MgGa residual acceptors are not significantly affected by the amount of indium incorporated, but depend mainly on the growth sequence, we feel that indium in GaAs acts primarily by closing nonradiative-recombination paths which are not necessarily associated with gallium vacancies.

  3. Macrophage solubilization and cytotoxicity of indium-containing particles in vitro.

    PubMed

    Gwinn, William M; Qu, Wei; Shines, Cassandra J; Bousquet, Ronald W; Taylor, Genie J; Waalkes, Michael P; Morgan, Daniel L

    2013-10-01

    Indium-containing particles (ICPs) are used extensively in the microelectronics industry. Pulmonary toxicity is observed after inhalation exposure to ICPs; however, the mechanism(s) of pathogenesis is unclear. ICPs are insoluble at physiological pH and are initially engulfed by alveolar macrophages (and likely airway epithelial cells). We hypothesized that uptake of ICPs by macrophages followed by phagolysosomal acidification results in the solubilization of ICPs into cytotoxic indium ions. To address this, we characterized the in vitro cytotoxicity of indium phosphide (InP) or indium tin oxide (ITO) particles with macrophages (RAW cells) and lung-derived epithelial (LA-4) cells at 24h using metabolic (3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium bromide) and membrane integrity (lactate dehydrogenase) assays. InP and ITO were readily phagocytosed by RAW and LA-4 cells; however, the particles were much more cytotoxic to RAW cells and cytotoxicity was dose dependent. Treatment of RAW cells with cytochalasin D (CytoD) blocked particle phagocytosis and reduced cytotoxicity. Treatment of RAW cells with bafilomycin A1, a specific inhibitor of phagolysosomal acidification, also reduced cytotoxicity but did not block particle uptake. Based on direct indium measurements, the concentration of ionic indium was increased in culture medium from RAW but not LA-4 cells following 24-h treatment with particles. Ionic indium derived from RAW cells was significantly reduced by treatment with CytoD. These data implicate macrophage uptake and solubilization of InP and ITO via phagolysosomal acidification as requisite for particle-induced cytotoxicity and the release of indium ions. This may apply to other ICPs and strongly supports the notion that ICPs require solubilization in order to be toxic.

  4. Dual-energy subtraction imaging utilizing indium as a contrast agent

    SciTech Connect

    Le Duc, G.; Zhong, Z.; Warkentien, L.; Laster, B.; Thomlinson, W.

    1997-10-01

    The purpose of our current work is to establish the minimum detection, of indium contrast agent using dual-energy subtraction imaging above and below indium K-edge. Experiments were performed on the X12 and X17B2 beamlines at the National Synchrotron Light Source using the same method but with two different set-ups. Experiments were first carried out on InCl{sub 3} solutions, then on V79 Chinese hamster cells and on BALB/c mice excised tumors, labeled with indium. For each experiment, several layers of Lucite were placed in front of the phantom to ensure a 43 mm thickness, dose to that of a mammography examination. Results were the same on X12 and X17B2. As expected, indium-free materials disappeared on subtracted images (water, steel reference and screw). Indium samples were easily distinguishable for the following concentrations: 10-5-2-1 mg/cm{sup 2}. Smaller concentrations were not clearly distinguishable and we were unable to see cell samples and tumors. To conclude, the lowest concentration we can image is around 1 mg/cm{sup 2}. These results agree with theoretical results. Such results also suggest that indium concentration in both cells and tumors is lower than 0.5 mg/cm{sup 2}. Since the current detection is dose to optimum, we conclude that dual energy subtraction imaging using indium to label tumors cells and tumors is not possible unless the indium uptake is increased by more than an order of magnitude.

  5. Development of Indium bump bonding for the ATLAS Insertable B-Layer (IBL)

    NASA Astrophysics Data System (ADS)

    Alimonti, G.; Andreazza, A.; Corda, G.; Darbo, G.; Di Gioia, S.; Fiorello, A.; Gariano, G.; Gemme, C.; Meroni, C.; Rovani, A.; Ruscino, E.

    2013-01-01

    About half of the ATLAS pixel modules have been assembled with the Selex indium bump bonding process. The requirements of the ATLAS Insertable B-Layer (IBL) detector ask for larger and thinner chips, two critical parameters for bonding processes. We report on the research and development carried on with Selex to produce modules with 100 μm thick and 18.8 × 20.2 mm2 area read out chips bonded with indium bumps.

  6. Enhanced optical properties due to indium incorporation in zinc oxide nanowires

    NASA Astrophysics Data System (ADS)

    Farid, S.; Mukherjee, S.; Sarkar, K.; Mazouchi, M.; Stroscio, M. A.; Dutta, M.

    2016-01-01

    Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 1019 cm-3 for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurements confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.

  7. Atomic site preferences and its effect on magnetic structure in the intermetallic borides M2Fe(Ru0.8T0.2)5B2 (M=Sc, Ti, Zr; T=Ru, Rh, Ir)

    NASA Astrophysics Data System (ADS)

    Brgoch, Jakoah; Mahmoud, Yassir A.; Miller, Gordon J.

    2012-12-01

    The site preference for a class of intermetallic borides following the general formula M2Fe(Ru0.8T0.2)5B2 (M=Sc, Ti, Zr; T=Ru, Rh, Ir), has been explored using ab initio and semi-empirical electronic structure calculations. This intermetallic boride series contains two potential sites, the Wyckoff 2c and 8j sites, for Rh or Ir to replace Ru atoms. Since the 8j site is a nearest neighbor to the magnetically active Fe atom, whereas the 2c site is a next nearest neighbor, the substitution pattern should play an important role in the magnetic structure of these compounds. The substitution preference is analyzed based on the site energy and bond energy terms, both of which arise from a tight-binding evaluation of the electronic band energy, and are known to influence the locations of atoms in extended solids. According to these calculations, the valence electron-rich Rh and Ir atoms prefer to occupy the 8j site, a result also corroborated by experimental evidence. Additionally, substitution of Rh or Ir at the 8j site results in a modification of the magnetic structure that ultimately results in larger local magnetic moment on the Fe atoms.

  8. Synthesis of indium nanoclusters and formation of thin film contacts on plastic substrates for organic and flexible electronics applications.

    PubMed

    Shi, Frank F; Bulkowski, Michal; Hsieh, K C

    2007-07-01

    In this work, we described the processes of synthesizing free-standing indium nanoclusters using inverse micelles and microemulsions as well as synthesizing organic-encapsulated indium nanoclusters using alkanethiols as the organic encapsulants. The synthesized organic-encapsulated indium nanoclusters have demonstrated the feasibilities to be used as plastic compatible soft metal contacts for emerging organic devices. The homogeneously distributed indium nanoclusters with sizes of 10-30 nm have been fabricated on a few different plastic substrates. By changing the alkanethiol carbon chain length and the sizes of the indium nanoclusters, the annealing temperature required to form low-resistance indium thin film conductors has been reduced to 80-100 °C, which is acceptable for a variety of organic thin films.

  9. Apparatus for Precise Indium-Bump Bonding of Microchips

    NASA Technical Reports Server (NTRS)

    Wild, Larry; Mulder, Jerry; Alvarado, Nicholas

    2005-01-01

    An improved apparatus has been designed and built for use in precise positioning and pressing of a microchip onto a substrate (which could, optionally, be another microchip) for the purpose of indium-bump bonding. The apparatus (see figure) includes the following: A stereomicroscope, A stage for precise positioning of the microchip in rotation angle (theta) about the nominally vertical pressing axis and in translation along two nominally horizontal coordinate axes (x and y), and An actuator system that causes a bonding tip to press the microchip against the substrate with a precisely controlled force. In operation, the microscope and the stage are used to position the microchip under the bonding tip and to align the indium bumps on the chip and the substrate, then the actuator system is used to apply a prescribed bonding force for a prescribed time. The improved apparatus supplants a partly similar prior apparatus that operated with less precision and repeatability, producing inconsistent and unreliable bonds. Results of the use of the prior apparatus included broken microchips, uneven bonds, and bonds characterized, variously, by overcompression or undercompression. In that apparatus, the bonding force was generated and controlled by use of a micrometer head positioned over the center of a spring-loaded scale, and the force was applied to the microchip via the scale, which was equipped for digital readout of the force. The inconsistency of results was attributed to the following causes: It was not possible to control the bonding force with sufficient precision or repeatability. Particularly troublesome was the inability to control the force at levels less than the weight of 150 g. Excessive compliance in the spring-loaded scale, combined with deviations from parallelarity of the substrate and bonding-tip surfaces, gave rise to nonuniformity in the pressure applied to the microchip, thereby generating excessive stresses and deformations in the microchip. In the

  10. Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials

    PubMed Central

    Gustafsson, Anna M. K.; Björefors, Fredrik; Steenari, Britt-Marie; Ekberg, Christian

    2015-01-01

    Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be −0.5 V and −0.9 V (versus the Ag/AgCl reference electrode), respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective. PMID:26347901

  11. Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials.

    PubMed

    Gustafsson, Anna M K; Björefors, Fredrik; Steenari, Britt-Marie; Ekberg, Christian

    2015-01-01

    Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric acid solutions of dissolved selenium-depleted material. Suitable potentials for the reduction of copper and indium were determined to be -0.5 V and -0.9 V (versus the Ag/AgCl reference electrode), respectively, using cyclic voltammetry. Electrodeposition of first copper and then indium from a solution containing the dissolved residue from the selenium separation and ammonium chloride in 1 M HCl gave a copper yield of 100.1 ± 0.5% and an indium yield of 98.1 ± 2.5%. The separated copper and indium fractions contained no significant contamination of the other elements. Gallium remained in solution together with a small amount of indium after the separation of copper and indium and has to be recovered by an alternative method since electrowinning from the chloride-rich acid solution was not effective. PMID:26347901

  12. [Health effects of solar cell component material. Toxicity of indium compounds to laboratory animals determined by intratracheal instillations].

    PubMed

    Tanaka, Akiyo; Hirata, Miyuki

    2013-01-01

    Owing to the increasing interest being paid to the issue of the global environment, the production of solar cells has increased rapidly in recent years. Copper indium gallium diselenide (CIGS) is a new efficient thin film used in some types of solar cell. Indium is a constitutive element of CIGS thin-film solar cells. It was thought that indium compounds were not harmful until the beginning of the 1990s because there was little information regarding the adverse health effects on humans or animals arising from exposure to indium compounds. After the mid-1990s, data became available indicating that indium compounds can be toxic to animals. In animal studies, it has been clearly demonstrated that indium compounds cause pulmonary toxicity and that the dissolution of indium compounds in the lungs is considerably slow, as shown by repeated intratracheal instillations in experimental animals. Thus, it is necessary to pay much greater attention to human exposure to indium compounds, and precautions against possible exposure to indium compounds are paramount with regard to health management.

  13. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

    NASA Astrophysics Data System (ADS)

    Rossow, U.; Hoffmann, L.; Bremers, H.; Buß, E. R.; Ketzer, F.; Langer, T.; Hangleiter, A.; Mehrtens, T.; Schowalter, M.; Rosenauer, A.

    2015-03-01

    We study the incorporation of indium into AlxGa1-x N/GaN quantum well (QW) structures with high indium concentrations above 25% for QW thicknesses in the range 2 nm down to half a c-lattice constant under pulsed and continuous growth conditions. We want to clarify which processes limit the incorporation of indium and lead to a degrading layer structure. The data are discussed in the context of the adlayer proposed by theory (Northrup et al., 2000) [1]. The interplay of the adlayer with the incoming flux, the high desorption rate and segregation of indium can consistently explain the various observed phenomena.

  14. Localization of indium-111 leukocytes in noninfected neoplasms

    SciTech Connect

    Lamki, L.M.; Kasi, L.P.; Haynie, T.P.

    1988-12-01

    Indium-111-labeled autologous leukocyte studies in general carry a high sensitivity, specificity, and accuracy for the investigation of infections and abscesses. However, past studies have described sporadic cases in which In leukocytes localized in tumors. Our experience using In leukocytes for the investigation of fever of unknown origin in cancer patients, however, indicates a relatively high incidence of In leukocyte localization in noninfected neoplasms. Out of the 61 patients studied for fever of unknown origin, 21 patients (34%) manifested abnormal localization of In leukocytes in neoplasms without clinical evidence of infection. These included patients with abnormal localization in: (a) lymph nodes, (b) soft-tissue tumors, and (c) bone neoplasms. The tumors included both primary and secondary lesions, and hematologic as well as solid tumors. The mechanism of In leukocyte localization in tumors is still not completely explained. Interpretations of In leukocyte studies in cancer patients with fever should take into consideration the possibility that localization may occur in neoplastic tissue per se and does not always indicate the presence of infection.

  15. Indium-111-labeled platelet scintigraphy in carotid atherosclerosis

    SciTech Connect

    Minar, E.; Ehringer, H.; Dudczak, R.; Schoefl, R.J.; Jung, M.; Koppensteiner, R.; Ahmadi, R.; Kretschmer, G.

    1989-01-01

    We evaluated platelet accumulation in carotid arteries by means of a dual-radiotracer method, using indium-111-labeled platelets and technetium-99m-labeled human serum albumin, in 123 patients (92 men, 31 women; median age 60 years). Sixty patients had symptoms of transient ischemic carotid artery disease, and 63 patients with peripheral arterial occlusive disease served as controls. Antiplatelet treatment with acetylsalicylic acid was taken by 53 of the 123 patients. In 36 of the 60 symptomatic patients, platelet scintigraphy was repeated 3-4 days after carotid endarterectomy. Comparison of different scintigraphic parameters (platelet accumulation index and percent of the injected dose of labeled platelets at the carotid bifurcation) showed no significant differences between symptomatic and asymptomatic patients, and the severity of stenosis and the presence of plaque ulceration also had no influence on the parameters. There was no difference between patients with a short (less than 4 weeks) or long (greater than 4 weeks) interval from the last transient ischemic attack to scintigraphy and no difference between patients with or without antiplatelet treatment. Classifying the patients according to plaque morphology judged by high-resolution real-time ultrasonography also demonstrated no differences. No significant correlation was found between any scintigraphic parameter and other platelet function parameters such as platelet survival time, platelet turnover rate, and concentration of platelet-specific proteins. Quantification of platelet deposition after carotid endarterectomy in 36 patients demonstrated a significant increase of the median platelet accumulation index and the percent injected dose index.

  16. Using Indium Tin Oxide To Mitigate Dust on Viewing Ports

    NASA Technical Reports Server (NTRS)

    2008-01-01

    NASA plans to use a number of onboard viewing ports to measure lunar regolith in situ and to monitor robotic and human activities on the lunar or Martian surface. Because of the size and abundance of dust particles on these bodies, the potential for dust to occlude viewing ports and windows is high enough to threaten system lifetime and reliability, especially when activities rely on relaying video to either a habitat module or controllers on Earth. This project uses a technology being developed by KSC's Electrostatics and Surface Physics Laboratory to remove dust from windowlike surfaces. The technology applies an alternating electric potential to interlaced electrodes. In this application, we use indium tin oxide (ITO) to create various electrode patterns in order to determine the most reliable pattern for dust removal. This technology has application to systems where optical clarity is important. Specifically, this project considers the in situ resource utilization (ISRU) application of a viewing port for Raman spectroscopy, where the electrode pattern on glass would be coated with a scratch-resistant sapphire film (Al2O3).

  17. Comparative performance of diffused junction indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.; Parat, K. K.

    1987-01-01

    A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

  18. Structural Properties of Amorphous Indium-Based Oxides

    NASA Astrophysics Data System (ADS)

    Khanal, Rabi; Medvedeva, Julia

    2014-03-01

    Amorphous transparent conducting and semiconducting oxides exhibit similar or even superior properties to those observed in their crystalline counterparts. To understand how the structural properties change upon amorphization and how chemical composition affects the local and long-range structure of the amorphous oxides, we employ first-principles molecular dynamics to generate amorphous In-X-O with X =Zn, Ga, Sn, Ge, Y, or Sc, and compare their local structure features to those obtained for amorphous and crystalline indium oxide. The results reveal that the short-range structure of the Metal-O polyhedra is generally preserved in the amorphous oxides; however, different metals (In and X) show quantitatively or qualitatively different behavior. Some of the metals retain their natural distances and/or coordination; while others allow for a highly distorted environment and thus favor ``defect'' formation under variable oxygen conditions. At the same time, we find that the presence of X increases both the average In-O coordination and the number of the 6-coordinated In atoms as compared to those in IO. The improved In coordination may be responsible for the observed reduction in the carrier concentration as the substitution level in In-X-O increases.

  19. A Conductometric Indium Oxide Semiconducting Nanoparticle Enzymatic Biosensor Array

    PubMed Central

    Lee, Dongjin; Ondrake, Janet; Cui, Tianhong

    2011-01-01

    We report a conductometric nanoparticle biosensor array to address the significant variation of electrical property in nanomaterial biosensors due to the random network nature of nanoparticle thin-film. Indium oxide and silica nanoparticles (SNP) are assembled selectively on the multi-site channel area of the resistors using layer-by-layer self-assembly. To demonstrate enzymatic biosensing capability, glucose oxidase is immobilized on the SNP layer for glucose detection. The packaged sensor chip onto a ceramic pin grid array is tested using syringe pump driven feed and multi-channel I–V measurement system. It is successfully demonstrated that glucose is detected in many different sensing sites within a chip, leading to concentration dependent currents. The sensitivity has been found to be dependent on the channel length of the resistor, 4–12 nA/mM for channel lengths of 5–20 μm, while the apparent Michaelis-Menten constant is 20 mM. By using sensor array, analytical data could be obtained with a single step of sample solution feeding. This work sheds light on the applicability of the developed nanoparticle microsensor array to multi-analyte sensors, novel bioassay platforms, and sensing components in a lab-on-a-chip. PMID:22163696

  20. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  1. Pulsed laser deposition of nanostructured indium-tin-oxide film

    NASA Astrophysics Data System (ADS)

    Yong, Thian Kok; Nee, Chen Hon; Yap, Seong Shan; Siew, Wee Ong; Sáfran, György; Yap, Yoke Kin; Tou, Teck Yong

    2010-08-01

    Effects of O2, N2, Ar and He on the formation of micro- and nanostructured indium tin oxide (ITO) thin films were investigated in pulsed Nd:YAG laser deposition on glass substrate. For O2 and Ar, ITO resistivity of <= 4 × 10-4 Ωcm and optical transmittance of > 90% were obtained with substrate temperature of 250 °C. For N2 and He, low ITO resisitivity could be obtained but with poor optical transmittance. SEM images show nano-structured ITO thin films for all gases, where dense, larger and highly oriented, microcrystalline structures were obtained for deposition in O2 and He, as revealed from the XRD lines. EDX results indicated the inclusion of Ar and N2 at the expense of reduced tin (Sn) content. When the ITO films were applied for fabrication of organic light emitting devices (OLED), only those deposited in Ar and O2 produced comparable performance to single-layer OLED fabricated on the commercial ITO.

  2. Nanocrystalline zinc indium vanadate: a novel photocatalyst for hydrogen generation.

    PubMed

    Mahapure, Sonali A; Ambekar, Jalindar D; Nikam, Latesh K; Marimuthu, Ramadoss; Kulkarni, Milind V; Kale, Bharat B

    2011-08-01

    Hydrogen is a future fuel and hence production of cheap hydrogen is an important area of research. Recently, the photocatalysts were used to generate hydrogen from water and hydrogen sulfide splitting under solar light. Hence, we designed Zinc Indium Vanadate, a novel visible light active photocatalyst and used for the generation of hydrogen by using solar light. We have demonstrated the synthesis of ZnIn2V2O9 (ZIV) catalyst by sonochemical route using NH4VO3, In (NO3)3 and Zn(CH3COO)2 as a precursors and PVP as a capping agent. The obtained product was further characterized by XRD, UV-DRS and FESEM. The XRD pattern reveals the existence of monoclinic crystal structure and broader peaks indicating the nanocrystalline nature of the material. The particle size was observed in the range of 50-70 nm. The optical study showed the absorption edge cut off at 520 nm with estimated band gap about 2.3 eV. Considering the band gap in visible range, ZnIn2V2O9 was used as a photocatalyst for photodecomposition of H2S under visible light irradiation to produce hydrogen. We observed excellent photocatalytic activity for the hydrogen generation by using this photocatalyst. PMID:22103105

  3. Finite-size effects in amorphous indium oxide

    NASA Astrophysics Data System (ADS)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-04-01

    We study the low-temperature magnetotransport properties of several highly disordered amorphous indium oxide (a:InO) samples. Simultaneously fabricated devices comprising a two-dimensional (2D) film and 10 -μ m -long wires of different widths were measured to investigate the effect of size as we approach the 1D limit, which is around 4 times the correlation length, and happens to be around 100 nm for a:InO. The film and the wires showed magnetic field (B )-induced superconductor to insulator transition (SIT). In the superconducting side, the resistance increased with decrease in wire width, whereas an opposite trend is observed in the insulating side. We find that this effect can be explained in light of charge-vortex duality picture of the SIT. Resistance of the 2D film follows an activated behavior over the temperature (T ), whereas, the wires show a crossover from the high-T -activated to a T -independent behavior. At high-temperature regime the wires' resistance follow the film's until they deviate and became independent of T . We find that the temperature at which this deviation occurs evolves with the magnetic field and the width of the wire, which show the effect of finite size on the transport.

  4. Indium oxide diffusion barriers for Al/Si metallizations

    NASA Astrophysics Data System (ADS)

    Kolawa, E.; Garland, C.; Tran, L.; Nieh, C. W.; Molarius, J. M.; Flick, W.; Nicolet, M.-A.; Wei, J.

    1988-12-01

    Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in /In2O3/Al and /TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+-p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in /In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a /TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment.

  5. Experiments with the low melting indium-bismuth alloy system

    NASA Technical Reports Server (NTRS)

    Krepski, Richard P.

    1992-01-01

    The following is a laboratory experiment designed to create an interest in and to further understanding of materials science. The primary audience for this material is the junior high school or middle school science student having no previous familiarity with the material, other than some knowledge of temperature and the concepts of atoms, elements, compounds, and chemical reactions. The objective of the experiment is to investigate the indium-bismuth alloy system. Near the eutectic composition, the liquidus is well below the boiling point of water, allowing simple, minimal hazard casting experiments. Such phenomena as metal oxidation, formation of intermetallic compound crystals, and an unusual volume increase during solidification could all be directly observed. A key concept for students to absorb is that properties of an alloy (melting point, mechanical behavior) may not correlate with simple interpolation of properties of the pure components. Discussion of other low melting metals and alloys leads to consideration of environmental and toxicity issues, as well as providing some historical context. Wetting behavior can also be explored.

  6. Prosthetic graft infection: limitations of indium white blood cell scanning.

    PubMed

    Brunner, M C; Mitchell, R S; Baldwin, J C; James, D R; Olcott, C; Mehigan, J T; McDougall, I R; Miller, D C

    1986-01-01

    The lack of a rapid, noninvasive, and accurate method to confirm or rule out prosthetic graft infection continues to constitute a compelling and vexing clinical problem. A host of adjunctive diagnostic techniques has been used in the past, but early promising results subsequently have usually not yielded acceptable sensitivity (reflecting false negatives) and specificity (reflecting false positive) data. White blood cell (WBC) indium 111 scanning has recently been added to this list. The utility and accuracy of 111In WBC scans were assessed by retrospective review of WBC scan results in 70 patients undergoing evaluation for possible prosthetic graft infection over a 7-year period. Operative and autopsy data (mean follow-up, 18 months for survivors with negative scans) were used to confirm the 22 positive, 45 negative, and three equivocal WBC scans. The false positive rate (+/- 70% confidence limits) was 36% +/- 6% (n = 8) among the 22 patients with positive scans (44% +/- 6% [11 of 25] if the three equivocal scans are included as false positive), yielding a specificity of 85% +/- 5% and an overall accuracy rate of 88% +/- 4% (80% +/- 5% and 84% +/- 5%, respectively, if the three equivocal cases are considered as false positive). All three patients with equivocal scans ultimately were judged not to have prosthetic graft infection. As implied by the high accuracy rate, the sensitivity of the test was absolute (100% [14 of 14]); there were no false negative results. (ABSTRACT TRUNCATED AT 250 WORDS)

  7. Prosthetic graft infection: limitations of indium white blood cell scanning

    SciTech Connect

    Brunner, M.C.; Mitchell, R.S.; Baldwin, J.C.; James, D.R.; Olcott C 4; Mehigan, J.T.; McDougall, I.R.; Miller, D.C.

    1986-01-01

    The lack of a rapid, noninvasive, and accurate method to confirm or rule out prosthetic graft infection continues to constitute a compelling and vexing clinical problem. A host of adjunctive diagnostic techniques has been used in the past, but early promising results subsequently have usually not yielded acceptable sensitivity (reflecting false negatives) and specificity (reflecting false positive) data. White blood cell (WBC) indium 111 scanning has recently been added to this list. The utility and accuracy of /sup 111/In WBC scans were assessed by retrospective review of WBC scan results in 70 patients undergoing evaluation for possible prosthetic graft infection over a 7-year period. Operative and autopsy data (mean follow-up, 18 months for survivors with negative scans) were used to confirm the 22 positive, 45 negative, and three equivocal WBC scans. The false positive rate (+/- 70% confidence limits) was 36% +/- 6% (n = 8) among the 22 patients with positive scans (44% +/- 6% (11 of 25) if the three equivocal scans are included as false positive), yielding a specificity of 85% +/- 5% and an overall accuracy rate of 88% +/- 4% (80% +/- 5% and 84% +/- 5%, respectively, if the three equivocal cases are considered as false positive). All three patients with equivocal scans ultimately were judged not to have prosthetic graft infection. As implied by the high accuracy rate, the sensitivity of the test was absolute (100% (14 of 14)); there were no false negative results.

  8. Crumpled indium-tin-oxide electrodes for transparency tuning

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih Keong

    2016-04-01

    Optical transparency of an indium-tin-oxide (ITO) thin film depends on its topography. Wrinkling of ITO thin film can reduce normal transmittance or visibility by scattering the incident light away. In this paper, we study topography change of ITO thin film and its effect on normal transmittance of light. Coating of ITO thin film on adhesive poly-acrylate elastomer forms wrinkles and folds when subjected to mechanical compression and surface buckling. At excessive compression, such as 25% equi-biaxial, folds of the ITO thin film are so deep and convoluted like crumpling of a piece of paper. This crumpled form of ITO thin film can well obscure the light passing even though a flat ITO thin film is transparent. Surprisingly, the crumpled ITO thin film remains continuous and conductive even with 25% equi-biaxial compression despite the fact that ITO is known to be brittle. These crumpled ITO thin films were subsequently used to make compliant electrodes for Dielectric elastomer actuator (DEA). These crumpled ITO thin film can be reversibly unfolded through the DEA's areal expansion. This DEA with 14.2% equi-biaxially crumpled ITO thin films can produce 37% areal expansion and demonstrate an optical transmittance change from 39.14% to 52.08% at 550nm wavelength.

  9. Indium-/sup 111/ leukocyte imaging in appendicitis

    SciTech Connect

    Navarro, D.A.; Weber, P.M.; Kang, I.Y.; dos Remedios, L.V.; Jasko, I.A.; Sawicki, J.E.

    1987-04-01

    Indium-/sup 111/-labeled leukocyte scintigraphy was applied to the diagnosis of acute appendicitis. Thirty-two patients observed in the hospital for possible appendicitis were prospectively studied. Scanning was done 2 hr after radiopharmaceutical injection. Thirteen scans were positive for acute appendicitis, and all but one were confirmed at laparotomy. In addition, two cases of colitis and two cases of peritonitis were detected. Of 15 negative studies, 11 had a benign course. Four patients with negative studies had laparotomy; two were found to have appendicitis and two had a normal appendix. Of 14 proven cases of appendicitis, 12 scans were positive for appendicitis with one false-positive scan, providing a sensitivity of 86%. Specificity was 93%: all negative cases except one had negative scans. Overall accuracy was 91% (29 of 32), comparing favorably with the accepted false-positive laparotomy rate of 25%. Use of In-/sup 111/-labeled leukocyte scintigraphy serves to reduce the false-positive laparotomy rate and to shorten the clinical observation time in patients with acute appendicitis.

  10. Broadband resonances in indium-tin-oxide nanorod arrays

    SciTech Connect

    Li, Shi-Qiang E-mail: r-chang@northwestern.edu; Sakoda, Kazuaki; Ketterson, John B.; Chang, Robert P. H. E-mail: r-chang@northwestern.edu

    2015-07-20

    There is currently much discussion within the nanophotonics community regarding the origin of wavelength selective absorption/scattering of light by the resonances in nanorod arrays. Here, we report a study of resonances in ordered indium-tin-oxide nanorod arrays resulting from waveguide-like modes. We find that with only a 2.4% geometrical coverage, micron-length nanorod arrays interact strongly with light across a surprisingly wide band from the visible to the mid-infrared, resulting in less than 10% transmission. Simulations show excellent agreement with our experimental observations. The field profile in the vicinity of the rods obtained from simulations shows that the electric field is mainly localized on the surfaces of the nanorods for all resonances. Based on our analysis, the resonances in the visible are different in character from those in the infrared. When light is incident on the array, part of it propagates in the space between the rods and part of it is guided within the rods. The phase difference (interference) at the ends of the rods forms the basis for the resonances in the visible region. The resonances in the infrared are Fabry-Perot-like resonances involving standing surface waves between the opposing ends of the rods. Simple analytical formulae predict the spectral positions of these resonances. It is suggested that these phenomena can be utilized for wavelength-selective photodetectors, modulators, and nanorod-based solar cells.

  11. Indium-substitution and indium-less case effects on structural and magnetic properties of yttrium-iron garnet

    NASA Astrophysics Data System (ADS)

    Nazlan, Rodziah; Hashim, Mansor; Ibrahim, Idza Riati; Idris, Fadzidah Mohd; Ismail, Ismayadi; Ab Rahman, Wan Norailiana Wan; Abdullah, Nor Hapishah; Zulkimi, Muhammad Misbah Muhammad; Mustaffa, Muhammad Syazwan

    2015-10-01

    The effect of indium (In) substitution in the dynamics of structure and ferrimagnetism of yttrium iron garnet (YIG) employing sintering temperature as a temporary agent of composition and structural changes was reported in this study. The nanoparticles of YIG powder samples with various In content (x=0.0-0.4) were prepared via the mechanical alloying (MA) technique. A brief, yet revealing characterization of the samples was carried out via transmission electron microscope, X-ray diffraction, Raman spectroscopy, B-H Hysteresisgraph, and LCR-metre. The X-ray diffraction analysis of the samples prepared via the MA indicates the formation of single phase YIG structure at much lower sintering temperature than that in the conventional ceramic technique. The lattice constant increases as In content increases which obeys Vegard's Law due to the larger In3+ ions replacing the smaller Fe3+ ions. The saturation induction increased reaching about 699.1 G for x=0.3 and decreased with further In substitution. Three stages of ordered magnetism formation were identified which attributed to development of crystallinity and larger grains for magnetic domain accommodation. The Curie temperature shows a decrement in their values with In content due to weakening of superexchange interactions. Raman shifts from 268.1 to 272.2 cm-1 with increasing In content were observed due to stress developed in the YIG crystal structure.

  12. Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets

    SciTech Connect

    Tsai, T. K.; Chen, H. C.; Lee, J. H.; Huang, Y. Y.; Fang, J. S.

    2010-05-15

    Zn-doped In{sub 2}O{sub 3} film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In{sub 2}O{sub 3} thin film on Corning Eagle{sup 2000} glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In{sub 2}O{sub 3} polycrystalline structure when the film was deposited on 150 and 300 deg. C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In{sub 2}O{sub 3} film had a low resistivity of 6.1x10{sup -4} {Omega} cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 deg. C annealing.

  13. Effect of impurity on high pressure behavior of nano indium titanate

    SciTech Connect

    Chitnis, Abhishek Garg, Nandini; Mishra, A. K.; Pandey, K. K.; Sharma, Surinder M.; Singhal, Anshu

    2015-06-24

    Angle dispersive x-ray diffraction studies were carried out on a mixture of nano particles of indium titanate, indium oxide, and disordered TiO{sub 2} upto pressures of ∼ 45 GPa. Our studies show that indium titanate undergoes a partial decomposition to its constituent high pressure oxides. However, concomitantly a very small fraction of indium titanate transforms to a denser phase at ∼ 27.5 GPa. This transformation to new phase was found to be irreversible. At this pressure even cubic In{sub 2}O{sub 3} transformed to the In{sub 2}O{sub 3} (II) (iso-structural to Rh{sub 2}O{sub 3} (II)) phase, without any signature of the intermediate corundum phase. The high pressure In{sub 2}O{sub 3} (II) phase transforms to the corundum structure on release of pressure. These studies indicate that the presence of a large fraction of seed impurities could have facilitated the decomposition of indium titanate into its constituent oxides at the cost of its incomplete transformation to the high pressure denser phase.

  14. Bone scan: Indium-WBC correlation in the diagnosis of osteomyelitis of the foot

    SciTech Connect

    Eisenberg, B.; Wrege, S.S.; Altman, M.I.; Moore, J.W. )

    1989-11-01

    A retrospective study was performed of 20 podiatric cases using technetium-99m methylene diphosphonate three-phase bone scans along with indium-111 oxine leukocyte scans, as needed, to determine the presence and extent of osteomyelitis of the foot. Using criteria developed at our institution, the authors attempt to provide a mechanism to make a reliable diagnosis for osteomyelitis that has been supported by surgical/pathologic confirmation of long-term clinical follow-up. The sensitivity, using bone scans alone, was 100%, and specificity was 47%. Correlating bone and indium-111 leukocyte scans yielded a sensitivity of 100% with a specificity raised to 81%. Indium-111 leukocyte scans were used in 40% of cases when a definitive diagnosis for osteomyelitis could not be made on the basis of the three-phase bone scan or clinical presentation alone. Indium-111 leukocyte scans were also helpful in delineating the extent of the disease process. The authors present a standard technique for a 5-hour delayed imaging in the three-phase bone scan, as well as marking the foot in the indium-111 leukocyte scan with three routine views obtained for each imaging procedure, to ensure clinical accuracy.

  15. Atom-efficient metal-catalyzed cross-coupling reaction of indium organometallics with organic electrophiles.

    PubMed

    Pérez, I; Sestelo, J P; Sarandeses, L A

    2001-05-01

    The novel metal-catalyzed cross-coupling reaction of indium organometallics with organic electrophiles is described. Triorganoindium compounds (R(3)In) containing alkyl, vinyl, aryl, and alkynyl groups are efficiently prepared from the corresponding lithium or magnesium organometallics by reaction with indium trichloride. The cross-coupling reaction of R(3)In with aryl halides and pseudohalides (iodide 2, bromide 5, and triflate 4), vinyl triflates, benzyl bromides, and acid chlorides proceeds under palladium catalysis in excellent yields and with high chemoselectivity. Indium organometallics also react with aryl chlorides as under nickel catalysis. In the cross-coupling reaction the triorganoindium compounds transfer, in a clear example of atom economy, all three of the organic groups attached to the metal, as shown by the necessity of using only 34 mol % of indium. The feasibility of using R(3)In in reactions with different electrophiles, along with the high yields and chemoselectivities obtained, reveals indium organometallics to be useful alternatives to other organometallics in cross-coupling reactions.

  16. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  17. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  18. Frequency of myocardial indium-111 antimyosin uptake after uncomplicated coronary artery bypass grafting

    SciTech Connect

    van Vlies, B.; van Royen, E.A.; Visser, C.A.; Meyne, N.G.; van Buul, M.M.; Peters, R.J.; Dunning, A.J. )

    1990-11-15

    The reported incidence of myocardial damage after coronary artery bypass grafting (CABG) is highly related to the methods used. Since indium-111 monoclonal antimyosin antibody scintigraphy has been shown to be highly specific and sensitive for myocardial necrosis, even in small lesions, uptake of this radiotracer was evaluated after CABG. In 23 consecutive patients without previous myocardial infarction who underwent CABG for stable angina, 80 MBq indium-111 antimyosin was injected on the third postoperative day. Planar images were obtained 48 hours later and analyzed for myocardial uptake of indium-111 antimyosin. Scintigraphic results were related to creatine kinase MB levels, duration of both aortic cross-clamping and cardiopulmonary bypass, and electrocardiographic changes. In all patients surgical procedure and postoperative course was uncomplicated. Indium-111 antimyosin uptake was present in 19 of 23 patients (82%). It was diffused in 7 patients and localized in 12. No pathologic Q waves occurred postoperatively. Fourteen patients exhibited ST-segment changes. No good relation was found among indium-111 antimyosin uptake and creatine kinase MB levels, duration of cross-clamping or bypass, and ST-T changes. It is concluded that some degree of myocardial damage, though silent, is common after CABG.

  19. Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties

    PubMed Central

    2009-01-01

    Single crystalline indium nanowires were prepared on Zn substrate which had been treated in concentrated sulphuric acid by galvanic displacement in the 0.002 mol L−1In2(SO4)3-0.002 mol L−1SeO2-0.02 mol L−1SDS-0.01 mol L−1citric acid aqueous solution. The typical diameter of indium nanowires is 30 nm and most of the nanowires are over 30 μm in length. XRD, HRTEM, SAED and structural simulation clearly demonstrate that indium nanowires are single-crystalline with the tetragonal structure, the growth direction of the nanowires is along [100] facet. The UV-Vis absorption spectra showed that indium nanowires display typical transverse resonance of SPR properties. The surfactant (SDS) and the pretreatment of Zn substrate play an important role in the growth process. The mechanism of indium nanowires growth is the synergic effect of treated Zn substrate (hard template) and SDS (soft template). PMID:20592961

  20. Adsorption of indium(III) ions from aqueous solution using chitosan-coated bentonite beads.

    PubMed

    Calagui, Mary Jane C; Senoro, Delia B; Kan, Chi-Chuan; Salvacion, Jonathan W L; Futalan, Cybelle Morales; Wan, Meng-Wei

    2014-07-30

    Batch adsorption study was utilized in evaluating the potential suitability of chitosan-coated bentonite (CCB) as an adsorbent in the removal of indium ions from aqueous solution. The percentage (%) removal and adsorption capacity of indium(III) were examined as a function of solution pH, initial concentration, adsorbent dosage and temperature. The experimental data were fitted with several isotherm models, where the equilibrium data was best described by Langmuir isotherm. The mean energy (E) value was found in the range of 1-8kJ/mol, indicating that the governing type of adsorption of indium(III) onto CCB is essentially physical. Thermodynamic parameters, including Gibbs free energy, enthalpy, and entropy indicated that the indium(III) ions adsorption onto CCB was feasible, spontaneous and endothermic in the temperature range of 278-318K. The kinetics was evaluated utilizing the pseudo-first order and pseudo-second order model. The adsorption kinetics of indium(III) best fits the pseudo-second order (R(2)>0.99), which implies that chemical sorption as the rate-limiting step. PMID:24802798

  1. On the impact of indium distribution on the electronic properties in InGaN nanodisks

    SciTech Connect

    Benaissa, M. E-mail: benaissa@fsr.ac.ma; Sigle, W.; Aken, P. A. van; Ng, T. K.; Ooi, B. S.; El Bouayadi, R.; Jahangir, S.; Bhattacharya, P.

    2015-03-09

    We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations—plasmons—at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.

  2. Anodic stripping voltammetric determination of cadmium using a "mercury free" indium film electrode.

    PubMed

    Anandhakumar, Sukeri; Mathiyarasu, Jayaraman; Phani, Kanala Lakshimi Narasimha

    2013-10-01

    In this work, the determination of cadmium has been attempted using an indium film electrode in the presence of bromide ions as an additive, for the first time. The electrode was prepared in situ on a glassy carbon substrate and employed in combination with square wave anodic stripping voltammetry. The purpose of having bromide ions is to enhance the analytical value of cadmium detection. In the absence of bromide ions, cadmium stripping peaks coalesce with indium and it is difficult to resolve for analytical purposes. The addition of bromide ions strongly influences the peak separation, thanks to the complex-forming characteristics of cadmium with bromide ions. Several key operational parameters influencing the electroanalytical response of indium modified electrodes were examined and optimized, such as deposition potential, pH, bromide ion and indium concentration. The indium modified electrode exhibited well-defined, separated stripping signals and revealed good linear behavior in the examined concentration range from 1 to 25 ng ml(-1). The present method shows a low detection limit value of 0.36 ng ml(-1). These results suggest that the proposed electrode contributes to the wider applicability of electrochemical stripping techniques in connection with "mercury-free" electrodes.

  3. Adsorption of indium(III) ions from aqueous solution using chitosan-coated bentonite beads.

    PubMed

    Calagui, Mary Jane C; Senoro, Delia B; Kan, Chi-Chuan; Salvacion, Jonathan W L; Futalan, Cybelle Morales; Wan, Meng-Wei

    2014-07-30

    Batch adsorption study was utilized in evaluating the potential suitability of chitosan-coated bentonite (CCB) as an adsorbent in the removal of indium ions from aqueous solution. The percentage (%) removal and adsorption capacity of indium(III) were examined as a function of solution pH, initial concentration, adsorbent dosage and temperature. The experimental data were fitted with several isotherm models, where the equilibrium data was best described by Langmuir isotherm. The mean energy (E) value was found in the range of 1-8kJ/mol, indicating that the governing type of adsorption of indium(III) onto CCB is essentially physical. Thermodynamic parameters, including Gibbs free energy, enthalpy, and entropy indicated that the indium(III) ions adsorption onto CCB was feasible, spontaneous and endothermic in the temperature range of 278-318K. The kinetics was evaluated utilizing the pseudo-first order and pseudo-second order model. The adsorption kinetics of indium(III) best fits the pseudo-second order (R(2)>0.99), which implies that chemical sorption as the rate-limiting step.

  4. Imaging of cardiac allograft rejection in dogs using indium-111 monoclonal antimyosin Fab

    SciTech Connect

    Addonizio, L.J.; Michler, R.E.; Marboe, C.; Esser, P.E.; Johnson, L.L.; Seldin, D.W.; Gersony, W.M.; Alderson, P.O.; Rose, E.A.; Cannon, P.J.

    1987-03-01

    The acute rejection of cardiac allografts is currently diagnosed by the presence of myocyte necrosis on endomyocardial biopsy. We evaluated the efficacy of noninvasive scintigraphic imaging with indium-111-labeled anticardiac myosin Fab fragments (indium-111 antimyosin) to detect and quantify cardiac allograft rejection. Six dogs that had intrathoracic heterotopic cardiac allograft transplantation were injected with indium-111 antimyosin and planar and single photon emission computed tomographic (SPECT) images were obtained in various stages of acute and subacute rejection. Four dogs had an allograft older than 8 months and had been on long-term immunosuppressive therapy; two dogs had an allograft less than 2 weeks old and were not on immunosuppressive therapy. Count ratios comparing heterotopic with native hearts were calculated from both SPECT images and in vitro scans of excised and sectioned hearts and were compared with the degree of rejection scored by an independent histopathologic review. Indium-111 antimyosin uptake was not visible in planar or SPECT images of native hearts. Faint diffuse uptake was apparent in cardiac allografts during long-term immunosuppression and intense radioactivity was present in hearts with electrocardiographic evidence of rejection. The heterotopic to native heart count ratios in SPECT images correlated significantly with the count ratios in the excised hearts (r = 0.93) and with the histopathologic rejection score (r = 0.97). The distribution of indium-111 antimyosin activity in right and left ventricles corresponded to areas of histopathologic abnormalities.

  5. Adsorption of collagen to indium oxide nanoparticles and infrared emissivity study thereon

    SciTech Connect

    Zhou Yuming Shan Yun; Sun Yanqing; Ju Huangxian

    2008-08-04

    Adsorption of collagen to indium oxide nanoparticles was carried out in water-acetone solution at volumetric ratio of 1:1 with pH value varying from 3.2 to 9.3. As indicated by TGA, maximum collagen adsorption to indium oxide nanoparticles occurred at pH of 3.2. It was proposed that noncovalent interactions such as hydrogen bonding, hydrophilic and electrostatic interactions made main contributions to collagen adsorption. The IR emissivity values (8-14 {mu}m) of collagen-adsorbed indium oxide nanoparticles decreased significantly compared to either pure collagen or indium oxide nanoparticles possibly due to the interfacial interactions between collagen and indium oxide nanoparticles. And the lowest infrared emissivity value of 0.587 was obtained at collagen adsorption of 1.94 g/100 g In{sub 2}O{sub 3}. On the chance of improved compatibility with organic adhesives, the chemical activity of adsorbed collagen was further confirmed by grafting copolymerization with methyl methacrylate by formation of polymer shell outside, as evidenced by IR spectrum and transmission electron microscopy.

  6. Influences of indium doping and annealing on microstructure and optical properties of cadmium oxide thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Yuankun; Lei, Pei; Zhu, Jiaqi; Han, Jiecai

    2016-04-01

    The influences of indium doping and subsequent annealing in nitrogen and air atmospheres on the microstructure and optical properties of cadmium oxide films were studied in detail with the aid of various characterizations. X-ray photoelectronic spectroscopy analysis shows that indium atom forms chemically oxidized bonds in Cd-O matrix. X-ray diffraction results demonstrate that CdO structure remains FCC structure with indium doping, whereas the preferential orientation transforms from (222) into (200) orientation. Indium doping prevents the large crystalline growth, and this role still works under both nitrogen and air annealing processes. Similarly, CdO films show rough surface under annealing conditions, but the force has been greatly weakened at high doping level. It is clear that refractive index and extinction coefficient are closely correlated with crystalline size for undoped films, whereas it turns to the doping level for doped films, which can be performed by the mechanism of indium atom substitution. This work provides a very useful guild for design and application of optical-electronic devices.

  7. Synthesis and decomposition of a novel carboxylate precursor to indium oxide

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

    1994-01-01

    Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

  8. Spectral analysis of the fifth spectrum of indium: In V

    NASA Astrophysics Data System (ADS)

    Swapnil; Tauheed, A.

    2016-01-01

    The fifth spectrum of indium (In V) has been investigated in the grazing and normal incidence wavelength regions. In4+ is a Rh-like ion with the ground configuration 4p64d9 and first excited configurations of the type 4p64d8nℓ (n≥4). The theoretical predications for this ion were made by Cowan's quasi-relativistic Hartree-Fock code with superposition of configurations involving 4p64d8(5p+6p+7p+4f+5f+6f), 4p54d10, 4p64d75s(5p+4f) for the odd parity matrix and 4p64d8 (5s+6s+7s+5d+6d), 4p64d7(5s2+5p2) for the even parity system. The spectra used for this work were recorded on 10.7 m grazing and normal incidence spectrographs at the National Institute of Standards and Technology, Gaithersburg, Maryland (USA) and also on a 3-m normal incidence vacuum spectrograph at Antigonish (Canada). The sources used were a sliding spark and a triggered spark respectively. Two hundred and thirty two energy levels based on the identification of 873 spectral lines have been established, forty six being new. Least squares fitted parametric calculations were used to interpret the observed level structure. The energy levels were optimized using a level optimization computer program (LOPT). Our wavelength accuracy for sharp and unblended lines is estimated to be within ±0.005 Å for λ below 400 Å and ±0.006 Å up to 1200 Å.

  9. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    NASA Technical Reports Server (NTRS)

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  10. Lithium indium diselenide: A new scintillator for neutron imaging

    NASA Astrophysics Data System (ADS)

    Lukosi, Eric; Herrera, Elan; Hamm, Daniel; Lee, Kyung-Min; Wiggins, Brenden; Trtik, Pavel; Penumadu, Dayakar; Young, Stephen; Santodonato, Louis; Bilheux, Hassina; Burger, Arnold; Matei, Liviu; Stowe, Ashley C.

    2016-09-01

    Lithium indium diselenide, 6LiInSe2 or LISe, is a newly developed neutron detection material that shows both semiconducting and scintillating properties. This paper reports on the performance of scintillating LISe crystals for its potential use as a converter screen for cold neutron imaging. The spatial resolution of LISe, determined using a 10% threshold of the Modulation Transfer Function (MTF), was found to not scale linearly with thickness. Crystals having a thickness of 450 μm or larger resulted in an average spatial resolution of 67 μm, and the thinner crystals exhibited an increase in spatial resolution down to the Nyquist frequency of the CCD. The highest measured spatial resolution of 198 μm thick LISe (27 μm) outperforms a commercial 50 μm thick ZnS(Cu):6LiF scintillation screen by more than a factor of three. For the LISe dimensions considered in this study, it was found that the light yield of LISe did not scale with its thickness. However, absorption measurements indicate that the 6Li concentration is uniform and the neutron absorption efficiency of LISe as a function of thickness follows general nuclear theory. This suggests that the differences in apparent brightness observed for the LISe samples investigated may be due to a combination of secondary charged particle escape, scintillation light transport in the bulk and across the LISe-air interface, and variations in the activation of the scintillation mechanism. Finally, it was found that the presence of 115In and its long-lived 116In activation product did not result in ghosting (memory of past neutron exposure), demonstrating potential of LISe for imaging transient systems.

  11. Decay studies of the highly neutron-deficient indium isotopes

    SciTech Connect

    Wouters, J.M.

    1982-02-01

    An extension of the experimentally known nuclidic mass surface to nuclei far from the region of beta-stability is of fundamental interest in providing a better determination of the input parameters for the various nuclear mass formulae, allowing a more accurate prediction of the ultimate limits of nuclear stability. In addition, a study of the shape of the mass surface in the vicinity of the doubly-closed nuclide /sup 100/Sn provides initial information on the behavior of the shell closure to be expected when Z = N = 50. Experiments measuring the decay energies of /sup 103/ /sup 105/In by ..beta..-endpoint measurements are described with special attention focused on the development of a plastic scintillator ..beta..-telescope coupled to the on-line mass separator RAMA (Recoil Atom Mass Analyzer). An attempt to measure the ..beta..-endpoint energy of /sup 102/In is also briefly described. The experimentally determined decay energies and derived masses for /sup 103/ /sup 105/In are compared with the predictions of different mass models to identify which models are more successful in this region. Furthermore, the inclusion in these comparisons of the available data on the neutron-rich indium nuclei permits a systematic study of their ground state mass behavior as a function of the neutron number between the shell closures at N = 50 and N = 82. These analyses indicate that the binding energy of /sup 103/In is 1 MeV larger than predicted by the majority of the mass models. An examination of the Q/sub EC/ surface and the single- and two-neutron separation energies in the vicinity of /sup 103/ /sup 105/In is also performed to investigate further the deviation and other possible systematic variations in the mass surface in a model-independent way.

  12. Preparation and properties of electrically conducting ceramics based on indium oxide-rare earth oxides-hafnium oxides

    SciTech Connect

    Marchant, D.D.; Bates, J.L.

    1983-09-01

    Electrically conducting refractory oxides based on adding indium oxide to rare earth-stabilized hafnium oxide are being studied for use in magnetohydrodynamic (MHD) generators, fuel cells, and thermoelectric generators. The use of indium oxide generally increases the electrical conductivity. The results of measurements of the electrical conductivity and data on corrosion resistance in molten salts are presented.

  13. Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

    NASA Astrophysics Data System (ADS)

    Deshpande, Manisha; Maske, Dilip; Choudhari, Rashmi; Arora, Brij Mohan; Gadkari, Dattatray

    2016-05-01

    Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

  14. Charge mobility increase in indium-molybdenum oxide thin films by hydrogen doping

    NASA Astrophysics Data System (ADS)

    Catalán, S.; Álvarez-Fraga, L.; Salas, E.; Ramírez-Jiménez, R.; Rodriguez-Palomo, A.; de Andrés, A.; Prieto, C.

    2016-11-01

    The increase of charge mobility in transparent conductive indium molybdenum oxide (IMO) films is correlated with the presence of hydroxyl groups. The introduction of H2 in the chamber during sputtering deposition compensates the excess charge introduced by cationic Mo doping of indium oxide either by oxygen or hydroxyl interstitials. Films present a linear increase of carrier mobility correlated with H2 content only after vacuum annealing. This behavior is explained because vacuum annealing favors the removal of oxygen interstitials over that of hydroxyl groups. Since hydroxyl groups offer lower effective charge and smaller lattice distortions than those associated with interstitial oxygen, this compensation mechanism offers the conditions for the observed increase in mobility. Additionally, the short-range order around molybdenum is evaluated by extended X-ray absorption fine structure (EXAFS) spectroscopy, showing that Mo4+ is placed at the In site of the indium oxide.

  15. Photoluminescence Spectroscopy Of Thin Indium-Tin-Oxide Contacts On Mercuric Iodide Substrates

    NASA Astrophysics Data System (ADS)

    James, Ralph B.; Bao, Xue J.; Schlesinger, Tuviah E.; Markakis, Jeff; Cheng, A. Y.; Ortale, Carol

    1989-05-01

    Mercuric iodide (HgI2) photodetectors with sputtered indium-tin-oxide (ITO) entrance electodes were studied using low-temperature photoluminesence spectroscopy. The photoluminescence spectra obtained on each photodetector was found to differ for points beneath the ITO contact and points adjacent to it, indicating that the contact fabrication process introduces new carrier traps and radiative recombination centers within the ITO-HgI2 interfacial region. In particular, a new broad band was observed in the spectra taken from points beneath the ITO electrode. Photo-current-versus-position measurements showed that the intensity of this broad band was enhanced in regions having relatively poor photoresponse. Specimens of HgI2 with evaporated semi-transparent tin and indium films were also investigated. The spectra obtained from points beneath the Sn and In films suggest that the regions having poor photoresponse in the ITO-contacted photodetector contain either free tin or indium metal.

  16. Thermodynamic properties of uranium in liquid gallium, indium and their alloys

    NASA Astrophysics Data System (ADS)

    Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Osipenko, A. G.

    2015-09-01

    Activity, activity coefficients and solubility of uranium was determined in gallium, indium and gallium-indium alloys containing 21.8 (eutectic), 40 and 70 wt.% In. Activity was measured at 573-1073 K employing the electromotive force method, and solubility between room temperature (or the alloy melting point) and 1073 K employing direct physical measurements. Activity coefficients were obtained from the difference of experimentally determined temperature dependencies of uranium activity and solubility. Intermetallic compounds formed in the respective alloys were characterized using X-ray diffraction. Partial and excess thermodynamic functions of uranium in the studied alloys were calculated. Liquidus lines in U-Ga and U-In phase diagrams from the side rich in gallium or indium are proposed.

  17. Theranostic etoposide phosphate/indium nanoparticles for cancer therapy and imaging.

    PubMed

    Srinivas, Ramishetti; Satterlee, Andrew; Wang, Yuhua; Zhang, Yuan; Wang, Yongjun; Huang, Leaf

    2015-11-28

    Etoposide phosphate (EP), a water-soluble anticancer prodrug, is widely used for treatment of many cancers. After administration it is rapidly converted to etoposide, its parent compound, which exhibits anticancer activity. Difficulty in parenteral administration necessitates the development of a suitable nanoparticle delivery system for EP. Here we have used indium both as a carrier to deliver etoposide phosphate to tumor cells and as a SPECT imaging agent through incorporation of (111)In. Etoposide phosphate was successfully encapsulated together with indium in nanoparticles, and exhibited dose dependent cytotoxicity and induction of apoptosis in cultured H460 cancer cells via G2/M cell cycle arrest. In a mouse xenograft lung cancer model, etoposide phosphate/indium nanoparticles induce tumor cell apoptosis, leading to significant enhancement of tumor growth inhibition compared to the free drug.

  18. Indium-111 labeled gold nanoparticles for in-vivo molecular targeting.

    PubMed

    Ng, Quinn K T; Olariu, Cristina I; Yaffee, Marcus; Taelman, Vincent F; Marincek, Nicolas; Krause, Thomas; Meier, Lorenz; Walter, Martin A

    2014-08-01

    The present report describes the synthesis and biological evaluation of a molecular imaging platform based on gold nanoparticles directly labeled with indium-111. The direct labeling approach facilitated radiolabeling with high activities while maintaining excellent stability within the biological environment. The resulting imaging platform exhibited low interference of the radiolabel with targeting molecules, which is highly desirable for in-vivo probe tracking and molecular targeted tumor imaging. The indium-111 labeled gold nanoparticles were synthesized using a simple procedure that allowed stable labeling of the nanoparticle core with various indium-111 activities. Subsequent surface modification of the particle cores with RGD-based ligands at various densities allowed for molecular targeting of the αvß3 integrin in-vitro and for molecular targeted imaging in human melanoma and glioblastoma models in-vivo. The results demonstrate the vast potential of direct labeling with radioisotopes for tracking gold nanoparticles within biological systems.

  19. Structural and electronic properties of indium-doped YBa2Cu3O(sigma)

    NASA Astrophysics Data System (ADS)

    Weidlich, Georg; Goelz, Michael; Wang, Ruiping; Evenson, William E.; Gardner, John A.

    1991-03-01

    X-ray diffraction patterns and Meissner flux exclusion of YBa2Cu3O(sigma) containing indium have been measured. All samples were synthesized at temperatures near 940 C, and the data indicate the indium atomic solubility to be approximately 3 pct per formula unit. At the solubility limit Tc is reduced from 92.7 to 91.3 K relative to undoped samples, and the total magnetic flux is reduced from approximately 40 to about 10 pct. For samples of In(x)Y(1-x)Ba2Cu3O(sigma) concentrations of other Y-Ba-Cu oxide phases are low and do not depend systematically on x. These results indicate that indium substitutes predominantly for yttrium when x is small.

  20. Detection of musculoskeletal infection with the indium-III leukocyte scan

    SciTech Connect

    Prchal, C.L.; Kahen, H.L.; Blend, M.J.; Barmada, R.

    1987-09-01

    Indium-111-labeled leukocyte scans were performed on 39 patients with suspected musculoskeletal infections to assess the usefulness of this study in detecting bone and joint infections. Results of these scans, as well as results of technetium-99m bone scans, were correlated with the patients' final diagnoses. The indium scan had an overall sensitivity of 77%, a specificity of 69%, and an accuracy of 72%. In 10 patients with a duration of symptoms of six weeks or less, the sensitivity was 100% and the specificity was 75%. In 29 patients with symptoms of greater than six weeks, the sensitivity and specificity were lower at 50% and 71% respectively. Technetium-99m bone scans were performed on 23 patients; sensitivity for infection was 100% while specificity was 60%. Our results suggest that the indium-111 leukocyte scan is a useful adjunct in the diagnosis of acute musculoskeletal infections, but may be inconclusive in chronic infections.

  1. Theranostic etoposide phosphate/indium nanoparticles for cancer therapy and imaging

    NASA Astrophysics Data System (ADS)

    Srinivas, Ramishetti; Satterlee, Andrew; Wang, Yuhua; Zhang, Yuan; Wang, Yongjun; Huang, Leaf

    2015-11-01

    Etoposide phosphate (EP), a water-soluble anticancer prodrug, is widely used for treatment of many cancers. After administration it is rapidly converted to etoposide, its parent compound, which exhibits anticancer activity. Difficulty in parenteral administration necessitates the development of a suitable nanoparticle delivery system for EP. Here we have used indium both as a carrier to deliver etoposide phosphate to tumor cells and as a SPECT imaging agent through incorporation of 111In. Etoposide phosphate was successfully encapsulated together with indium in nanoparticles, and exhibited dose dependent cytotoxicity and induction of apoptosis in cultured H460 cancer cells via G2/M cell cycle arrest. In a mouse xenograft lung cancer model, etoposide phosphate/indium nanoparticles induce tumor cell apoptosis, leading to significant enhancement of tumor growth inhibition compared to the free drug.

  2. Measurement of Activity of Indium in Liquid Bi-In-Sn Alloys by EMF Method

    NASA Astrophysics Data System (ADS)

    Kumar, M. R.; Mohan, S.; Behera, C. K.

    2016-08-01

    The electrochemical technique based on a molten salt electrolyte galvanic cell has been used to measure the activity of indium in liquid Bi-In-Sn alloys in the temperature range of 723 K to 855 K along three ternary sections. The activity of tin in Bi-Sn binary alloys has also been measured by the same technique in the above temperature range. The activity of indium in Bi-In-Sn alloys shows negative deviation from Raoult's law for most of the compositions and slight positive deviations for a few indium-rich compositions. The ternary excess molar free energies have been calculated by Darken's treatment. Isoactivity curves at 813 K in the ternary Bi-In-Sn alloys were derived by combining the activity data of In-Sn and Bi-In alloys. The values of excess molar free energy obtained in this study are compared with those calculated from the Muggianu model at 813 K.

  3. Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

    NASA Astrophysics Data System (ADS)

    Whiddon, R.; Zhou, B.; Borggren, J.; Aldén, M.; Li, Z. S.

    2015-09-01

    Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 62S1/2 → 52P1/2 and 62S1/2 → 52P3/2 transitions as a function of the calculated TMI seeding concentration over a range of 2-45 ppm. The response was found to be linear over the range 3-22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.

  4. Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry.

    PubMed

    Whiddon, R; Zhou, B; Borggren, J; Aldén, M; Li, Z S

    2015-09-01

    Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6(2)S1/2 → 5(2)P1/2 and 6(2)S1/2 → 5(2)P3/2 transitions as a function of the calculated TMI seeding concentration over a range of 2-45 ppm. The response was found to be linear over the range 3-22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence. PMID:26429429

  5. Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

    SciTech Connect

    Whiddon, R.; Zhou, B.; Borggren, J.; Aldén, M.; Li, Z. S.

    2015-09-15

    Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 1/2} and 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2} transitions as a function of the calculated TMI seeding concentration over a range of 2–45 ppm. The response was found to be linear over the range 3–22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.

  6. Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM.

    PubMed

    Lee, Cheol-Hee; Jeong, Mi-Kyung; Kilicaslan, M Fatih; Lee, Jong-Hyeon; Hong, Hyun-Seon; Hong, Soon-Jik

    2013-03-01

    In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

  7. Extraction equilibrium of indium(III) from nitric acid solutions by di(2-ethylhexyl)phosphoric acid dissolved in kerosene.

    PubMed

    Tsai, Hung-Sheng; Tsai, Teh-Hua

    2012-01-04

    The extraction equilibrium of indium(III) from a nitric acid solution using di(2-ethylhexyl) phosphoric acid (D2EHPA) as an acidic extractant of organophosphorus compounds dissolved in kerosene was studied. By graphical and numerical analysis, the compositions of indium-D2EHPA complexes in organic phase and stoichiometry of the extraction reaction were examined. Nitric acid solutions with various indium concentrations at 25 °C were used to obtain the equilibrium constant of InR₃ in the organic phase. The experimental results showed that the extraction distribution ratios of indium(III) between the organic phase and the aqueous solution increased when either the pH value of the aqueous solution and/or the concentration of the organic phase extractant increased. Finally, the recovery efficiency of indium(III) in nitric acid was measured.

  8. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    DOEpatents

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  9. Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

    NASA Technical Reports Server (NTRS)

    Miller, Timothy M.; Costen, Nick; Allen, Christine

    2007-01-01

    This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

  10. Pulmonary uptake in Indium-111 leukocyte imaging: clinical significance in patients with suspected occult infections

    SciTech Connect

    Cook, P.S.; Datz, F.L.; Disbro, M.A.; Alazraki, N.P.; Taylor, A.T.

    1984-02-01

    A retrospective review was undertaken to evaluate the frequency and significance of pulmonary activity noted on 306 indium-111 leukocyte studies involving 232 patients with suspected occult infections. Forty-eight studies showed pulmonary activity in one of two patterns of uptake, focal or diffuse. Fourteen of 27 studies (52%) with focal uptake and two of 21 studies (10%) with diffuse uptake were associated with infectious processes. Lung uptake of indium-111-labeled leukocytes was a poor predictor of pulmonary infection in patients studied for occult infection, although the focal pattern was more likely than the diffuse pattern to be associated with infection.

  11. Distribution of indium, thallium and bismuth in the environmental water of Japan.

    PubMed

    Miyazaki, A; Kimura, A; Tao, H

    2012-12-01

    Indium, thallium and bismuth are toxic and it is important to know the distribution of these elements in environmental water. The concentrations of these elements were measured in 50 sampling points in Japan and the reasons of high concentrations in several samples were discussed. The average concentrations (ng/L) of dissolved and particulate indium in river, lake and coastal seawater were 1.4-3.0 and 2.4-9.1, respectively. Those for thallium were 7.2-11.3 and 3.5-36.0. Those for bismuth were 12.7-24.0 and 12.1-52.7.

  12. Work in progress: radionuclide imaging of indium-111-labeled eosinophils in mice

    SciTech Connect

    Runge, V.M.; Rand, T.H.; Clanton, J.A.; Jones, J.P.; Colley, D.G.; Partain, C.L.; James, A.E. Jr.

    1983-05-01

    Eosinophils isolated from peritoneal exudates were labeled with indium-111-oxine and injected intravenously into sensitized mice. They became localized at sites of inflammation produced by intradermal injections of schistosomal antigen or Toxocara canis larvae, whereas labeled neutrophils did not. Intense uptake of eosinophils by normal spleen, liver, and bone marrow was noted, with tracer distribution effectively complete by 5 hours after injection. Indium-111-eosinophil studies appear to be quite sensitive to parasitic inflammatory reactions; in contrast, nonspecific inflammation such as that induced by turpentine causes localization of eosinophils, but to a lesser extent. This technique may be useful in the study of parasitic and allergic disease.

  13. Indium-111 labeled leukocytes in the evaluation of suspected abdominal abscesses.

    PubMed

    Coleman, R E; Black, R E; Welch, D M; Maxwell, J G

    1980-01-01

    Sixty-eight indium-111-labeled leukocyte imaging studies were performed in 53 patients with suspected abdominal abscesses. Twenty-nine studies gave abnoramal results. Nine wound infections were demonstrated, and 14 abscesses were correctly identified. Four studied demonstrated colonic accumulation, one of which remains unexplained, and two accessory spleens were identified. Indium-111 leukocyte imaging is a sensitive and specific study in evaluating patients with suspected abdominal abscess. Differentiation of abscess from other causes of inflammation has not been a problem. The exact role of leukocyte imaging compared with gallium-67 citrate imaging, ultrasound and computerized tomography remains to be determined.

  14. Ternary boride product and process

    NASA Technical Reports Server (NTRS)

    Clougherty, Edward V. (Inventor)

    1976-01-01

    A hard, tough, strong ceramic body is formed by hot pressing a mixture of a powdered metal and a powdered metal diboride. The metal employed is zirconium, titanium or hafnium and the diboride is the diboride of a different member of the same group of zirconium, titanium or hafnium to form a ternary composition. During hot pressing at temperatures above about 2,000.degree.F., a substantial proportion of acicular ternary monoboride is formed.

  15. High Affinity Binding of Indium and Ruthenium Ions by Gastrins.

    PubMed

    Baldwin, Graham S; George, Graham N; Pushie, M Jake

    2015-01-01

    The peptide hormone gastrin binds two ferric ions with high affinity, and iron binding is essential for the biological activity of non-amidated forms of the hormone. Since gastrins act as growth factors in gastrointestinal cancers, and as peptides labelled with Ga and In isotopes are increasingly used for cancer diagnosis, the ability of gastrins to bind other metal ions was investigated systematically by absorption spectroscopy. The coordination structures of the complexes were characterized by extended X-ray absorption fine structure (EXAFS) spectroscopy. Changes in the absorption of gastrin in the presence of increasing concentrations of Ga3+ were fitted by a 2 site model with dissociation constants (Kd) of 3.3 x 10-7 and 1.1 x 10-6 M. Although the absorption of gastrin did not change upon the addition of In3+ ions, the changes in absorbance on Fe3+ ion binding in the presence of indium ions were fitted by a 2 site model with Kd values for In3+ of 6.5 x 10-15 and 1.7 x 10-7 M. Similar results were obtained with Ru3+ ions, although the Kd values for Ru3+ of 2.6 x 10-13 and 1.2 x 10-5 M were slightly larger than observed for In3+. The structures determined by EXAFS all had metal:gastrin stoichiometries of 2:1 but, while the metal ions in the Fe, Ga and In complexes were bridged by a carboxylate and an oxygen with a metal-metal separation of 3.0-3.3 Å, the Ru complex clearly demonstrated a short range Ru-Ru separation, which was significantly shorter, at 2.4 Å, indicative of a metal-metal bond. We conclude that gastrin selectively binds two In3+ or Ru3+ ions, and that the affinity of the first site for In3+ or Ru3+ ions is higher than for ferric ions. Some of the metal ion-gastrin complexes may be useful for cancer diagnosis and therapy.

  16. High Affinity Binding of Indium and Ruthenium Ions by Gastrins

    PubMed Central

    Baldwin, Graham S.; George, Graham N.; Pushie, M. Jake

    2015-01-01

    The peptide hormone gastrin binds two ferric ions with high affinity, and iron binding is essential for the biological activity of non-amidated forms of the hormone. Since gastrins act as growth factors in gastrointestinal cancers, and as peptides labelled with Ga and In isotopes are increasingly used for cancer diagnosis, the ability of gastrins to bind other metal ions was investigated systematically by absorption spectroscopy. The coordination structures of the complexes were characterized by extended X-ray absorption fine structure (EXAFS) spectroscopy. Changes in the absorption of gastrin in the presence of increasing concentrations of Ga3+ were fitted by a 2 site model with dissociation constants (Kd) of 3.3 x 10−7 and 1.1 x 10−6 M. Although the absorption of gastrin did not change upon the addition of In3+ ions, the changes in absorbance on Fe3+ ion binding in the presence of indium ions were fitted by a 2 site model with Kd values for In3+ of 6.5 x 10−15 and 1.7 x 10−7 M. Similar results were obtained with Ru3+ ions, although the Kd values for Ru3+ of 2.6 x 10−13 and 1.2 x 10−5 M were slightly larger than observed for In3+. The structures determined by EXAFS all had metal:gastrin stoichiometries of 2:1 but, while the metal ions in the Fe, Ga and In complexes were bridged by a carboxylate and an oxygen with a metal-metal separation of 3.0–3.3 Å, the Ru complex clearly demonstrated a short range Ru—Ru separation, which was significantly shorter, at 2.4 Å, indicative of a metal-metal bond. We conclude that gastrin selectively binds two In3+ or Ru3+ ions, and that the affinity of the first site for In3+ or Ru3+ ions is higher than for ferric ions. Some of the metal ion-gastrin complexes may be useful for cancer diagnosis and therapy. PMID:26457677

  17. Scaling Mesa Indium Phosphide DHBTs to Record Bandwidths

    NASA Astrophysics Data System (ADS)

    Lobisser, Evan

    Indium phosphide heterojunction bipolar transistors are able to achieve higher bandwidths at a given feature size than transistors in the Silicon material system for a given feature size. Indium phosphide bipolar transistors demonstrate higher breakdown voltages at a given bandwidth than both Si bipolars and field effect transistors in the InP material system. The high bandwidth of InP HBTs results from both intrinsic material parameters and bandgap engineering through epitaxial growth. The electron mobility in the InGaAs base and saturation velocity in the InP collector are both approximately three times higher than their counterparts in the SiGe material system. Resistance of the base can be made very low due to the large offset in the valence band between the InP emitter and the InGaAs base, which allows the base to be doped on the order of 1020 cm-3 with negligible reduction in emitter injection efficiency. This thesis deals with type-I, NPN dual-heterojunction bipolar transistors. The emitters are InP, and the base is InGaAs. There is a thin (˜ 10 nm) n-type InGaAs "setback" region, followed by a chirped superlattice InGaAs/InAlAs grade to the InP collector. The setback, grade, and collector are all lightly doped n-type. The emitter and collector are contacted through thin (˜ 5 nm) heavily doped n-type InGaAs layers to reduce contact resistivity. The primary focus of this work is increasing the bandwidth of InP HBTs through the proportional scaling of the device dimensions, both layer thicknesses and junction areas, as well as the reduction of the contact resistivities associated with the transistor. Essentially, all RC time constants and transit times must be reduced by a factor of two to double a transistor's bandwidth. Chapter 2 describes in detail the scaling laws and design principles for high frequency bipolar transistor design. A low-stress, blanket sputter deposited composite emitter metal process was developed. Refractory metal base contacts were

  18. Detection of primary colorectal cancer with indium 111 monoclonal antibody B72. 3

    SciTech Connect

    Doerr, R.J.; Abdel-Nabi, H.; Baker, J.M.; Steinberg, S. )

    1990-12-01

    B72.3 is a murine monoclonal antibody of the immunoglobulin subclass IgG1 directed against TAG-72, a cell surface antigen present on colorectal carcinoma cells. We investigated the utility of scanning with indium 111-labeled B72.3 in 16 patients with a high clinical suspicion of or biopsy-proven primary colorectal cancer. Each patient received 1 or 2 mg of B72.3 monoclonal antibody labeled with 152 MBq of indium 111. Patients underwent scanning 2 to 3 days and 7 days after infusion by planar and emission computed tomography. Nineteen lesions were confirmed in 12 patients. Three patients with benign polyps had true-negative monoclonal antibody scans. Indium 111-labeled imaging of B72.3 detected nine of 19 lesions. Unsuspected tumor sites were identified by monoclonal antibody scan in three patients. By detection of additional abdominal disease and extra-abdominal spread, indium 111-labeled scanning of B72.3 directly affected treatment in 18% of patients.

  19. Liquid precursor for deposition of indium selenide and method of preparing the same

    SciTech Connect

    Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

    2015-09-22

    Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

  20. Total synthesis of (-)-dihydrosporothriolide utilizing an indium-mediated Reformatsky-Claisen rearrangement.

    PubMed

    Ishihara, Jun; Tsuru, Hiroaki; Hatakeyama, Susumi

    2014-06-20

    The asymmetric synthesis of (-)-dihydrosporothriolide (1), a biologically active bis-γ-butyrolactone, is described, that proceeds through a D-proline-catalyzed asymmetric aminooxylation, indium-mediated Reformatsky-Claisen rearrangement of an α,α-dibromoacetate derivative, and diastereoselective dihydroxylation. The route requires no protective group manipulation and allows the concise seven-step synthesis of 1 from n-octanal.

  1. High activity of an indium alkoxide complex toward ring opening polymerization of cyclic esters.

    PubMed

    Quan, Stephanie M; Diaconescu, Paula L

    2015-06-14

    An indium complex supported by a ferrocene-derived Schiff base ligand has an unprecedented high activity toward ε-caprolactone, δ-valerolactone, and β-butyrolactone. l-Lactide, d,l-lactide, and trimethylene carbonate polymerizations also showed moderate to high activity.

  2. Atmospheric Deposition of Indium in the Northeastern United States: Flux and Historical Trends.

    PubMed

    White, Sarah Jane O; Keach, Carrie; Hemond, Harold F

    2015-11-01

    The metal indium is an example of an increasingly important material used in electronics and new energy technologies, whose environmental behavior and toxicity are poorly understood despite increasing evidence of detrimental health impacts and human-induced releases to the environment. In the present work, the history of indium deposition from the atmosphere is reconstructed from its depositional record in an ombrotrophic bog in Massachusetts. A novel freeze-coring technique is used to overcome coring difficulties posed by woody roots and peat compressibility, enabling retrieval of relatively undisturbed peat cores dating back more than a century. Results indicate that long-range atmospheric transport is a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak fluxes of 1.9 ng/cm2/yr. Atmospheric deposition to the bog began increasing in the late 1800s/early 1900s, and peaked in the early 1970s. A comparison of deposition data with industrial production and emissions estimates suggests that both coal combustion and the smelting of lead, zinc, copper, and tin sulfides are sources of indium to the atmosphere in this region. Deposition appears to have decreased considerably since the 1970s, potentially a visible effect of particulate emissions controls instated in North America during that decade.

  3. INDIUM MEDIATED REACTIONS IN WATER: SYNTHESIS OF BETA-HYDROXYL ESTERS. (R822668)

    EPA Science Inventory

    Abstract

    A variety of small beta, Greek-hydroxyl esters were synthesized efficiently through indium mediated carbon-carbon bond formation in water followed by ozonolysis.

  4. Charge-tunable indium-organic frameworks built from cationic, anionic, and neutral building blocks.

    PubMed

    Bu, Fei; Lin, Qipu; Zhai, Quan-Guo; Bu, Xianhui; Feng, Pingyun

    2015-10-14

    By using the same ligand, 2,5-furandicarboxylic acid (FDA), and varying synthetic conditions (especially the In(3+)/FDA ratio), it is possible to access three unique building blocks of indium, demonstrating charge-switching from a positive trimer to a negative monomer and leading to the synthesis of In-MOFs with tunable framework charge.

  5. Electrochemical study of the properties of indium in room temperature chloroaluminate molten salts

    SciTech Connect

    Liu, J.S.Y.; Sun, I.W.

    1997-01-01

    The electrochemistry of indium was studied with voltammetry and chronoamperometry at glassy carbon, tungsten, and nickel electrodes in the basic and acidic aluminum chloride-1,2-dimethyl-3-propylimidazolium chloride molten salt at 27 C. In the basic melt, In(III) is complexed as [InCl{sub 5}]{sup 2{minus}}, which could be reduced to indium metal through a three-electron reduction process. The electrodeposition of indium on glassy carbon and tungsten electrodes involves progressive three-dimensional nucleation on a finite number of active sites with diffusion-controlled growth of the nuclei. The electrodeposition of indium metal on a nickel electrode entails progressive three-dimensional nucleation on a large number of active sites. The formal potentials of the In(III)/In couple in the 44.4 to 55.6 and 49.0 to 51.0 mole percent (m/o) melts are {minus}1.096 and {minus}1.009 V, respectively, vs. Al(III)Al in the 66.7 to 33.3 m/o.

  6. Apker Award Talk: Atomic Beam Measurement of the Indium 6p1 / 2 Scalar Polarizability

    NASA Astrophysics Data System (ADS)

    Augenbraun, Benjamin

    2016-05-01

    We report on the first measurement of the scalar polarizability of the indium 6p1 / 2 -excited state using two-step laser spectroscopy in an atomic beam. This is one in a series of precise atomic structure measurements by the Majumder lab at Williams College, which serve as stringent tests of abinitio calculation methods for three-valence-electron systems. We stabilize a laser to the indium 5p1 / 2 --> 6s1 / 2 410 nm transition and scan a second laser across the 6s1 / 2 --> 6p1 / 2 1343 nm transition. The two laser beams are overlapped and interact transversely with a collimated atomic beam of indium. Two-tone FM spectroscopy allows us to observe the small (< 1 part in 103) IR absorption, and characteristic sideband features in the RF-demodulated lineshape provide built-in frequency calibration. Application of DC electric fields up to 20 kV/cm give rise to Stark shifts of order 100 MHz. Because our group has previously measured the difference in polarizabilities within the 410 nm transition, we can determine the 6p1 / 2 polarizability with no loss of precision. Preliminary results are in excellent agreement with recent theoretical calculations and can be used to infer accurate values for the indium 6 p - 5 d matrix elements.

  7. Precise measurement of the scalar polarizability of ^115In in an indium atomic beam

    NASA Astrophysics Data System (ADS)

    Schneider, Anders; Ranjit, Gambhir; Schine, Nathan; Majumder, P. K.

    2012-06-01

    In recent years, we have pursued a series of precise atomic structure measurements in Group III elements thallium and indium in order to test recent ab initio theory calculations in these three-valance-electron systems. We are currently completing a precision measurement of the indium scalar polarizability within the 410 nm 5P1/2->6S1/2 transition using a GaN semiconductor laser interacting transversely with a collimated indium atomic beam in the presence of precisely calibrated high voltage electric field. We use 100 MHz laser frequency modulation and RF lock-in detection to obtain a high-resolution absorption signal despite indium beam optical depths of < 10-3. An in-vacuum chopper wheel modulates the atomic beam and provides further noise and background reduction. Our current level of precision produces 1% statistical measurement of the Stark Shift in less than one hour of data collection. Our preliminary results for the scalar polarizability within this transition agree with a previous result,ootnotetextT.R. Fowler and J. Yellin, Phys. Rev. A 1, 1006 (1970) and we expect an eventual tenfold improvement in accuracy, providing a challenge to ongoing atomic theory calculations. Current results will be presented.

  8. Reduction of the Casimir Force from Indium Tin Oxide Film by UV Treatment

    SciTech Connect

    Chang, C.-C.; Banishev, A. A.; Mohideen, U.; Klimchitskaya, G. L.; Mostepanenko, V. M.

    2011-08-26

    A significant decrease in the magnitude of the Casimir force (from 21% to 35%) was observed after an indium tin oxide sample interacting with an Au sphere was subjected to the UV treatment. Measurements were performed by using an atomic force microscope in high vacuum. The experimental results are compared with theory and a hypothetical explanation for the observed phenomenon is proposed.

  9. INDIUM AND ZINC MEDIATED ONE-ATOM CARBOCYCLE ENLARGEMENT IN WATER. (R822668)

    EPA Science Inventory

    Abstract

    Six-, seven-, eight-membered rings are enlarged by one carbon-atom into seven-, eight- and nine-membered ring derivatives respectively, via indium or zinc mediated reactions in aqueous medium.

  10. Preparation and properties of hydrogen-intercalated indium and gallium monoselenides

    SciTech Connect

    Koz'mik, I.D.; Kovalyuk, Z.D.; Grigorchak, I.I.; Bakhmatyuk, B.P.

    1987-10-01

    Indium and gallium monoselenides can be intercalated by hydrogen ions. Thermodynamic parameters have been calculated for the intercalation and the proton diffusion coefficient in the van der Waals' spaces has been determined. The effects of hydrogen intercalation on the resistance perpendicular to the layers in InSe and GaSe have been determined.

  11. Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

    NASA Astrophysics Data System (ADS)

    Miller, Timothy M.; Costen, Nick; Allen, Christine

    2008-04-01

    In our effort to develop large format kilo-pixel arrays of transition edge sensors, we are working toward demonstrating electrical connectivity of a hybridized 32×40 element detector to a NIST multiplexer. The geometry of large-scale arrays that attempt to maintain a high filling factor does not allow for typical fan-out wiring, thus the detector array is hybridized directly to the readout multiplexer. The two parts are bonded together with 10 micron tall indium bumps, which complete the electrical path and also provide mechanical strength. The indium hybridization was developed and performed at the Goddard Space Flight Center and has been shown to withstand tensile loading up to 0.26 gram-force per indium bump. A cavity is deep etched behind each pixel prior to bonding, leaving only 30 micron support walls, which maintains a high filling fraction. Electrical continuity has been shown through the indium path in room temperature measurements. We report on the fabrication process used to hybridize the parts and the subsequent electrical performance.

  12. Use of indium-111-labeled white blood cells in the diagnosis of diabetic foot infections

    SciTech Connect

    Zeiger, L.S.; Fox, I.M.

    1990-01-01

    The diagnosis of bone infection in the patient with nonvirgin bone is a diagnostic dilemma. This is especially true in the diabetic patient with a soft tissue infection and an underlying osteoarthropathy. The authors present a retrospective study using the new scintigraphic technique of indium-111-labeled white blood cells as a method of attempting to solve this diagnostic dilemma.

  13. Chelant-induced reclamation of indium from the spent liquid crystal display panels with the aid of microwave irradiation.

    PubMed

    Hasegawa, Hiroshi; Rahman, Ismail M M; Egawa, Yuji; Sawai, Hikaru; Begum, Zinnat A; Maki, Teruya; Mizutani, Satoshi

    2013-06-15

    Indium is a rare metal that is mostly consumed as indium tin oxide (ITO) in the fabrication process of liquid crystal display (LCD) panels. The spent LCD panels, termed as LCD-waste hereafter, is an increasing contributor of electronic waste burden worldwide and can be an impending secondary source of indium. The present work reports a new technique for the reclamation of indium from the unground LCD-waste using aminopolycarboxylate chelants (APCs) as the solvent in a hyperbaric environment and at a high-temperature. Microwave irradiation was used to create the desired system conditions, and a substantial abstraction of indium (≥80%) from the LCD-waste with the APCs (EDTA or NTA) was attained in the acidic pH region (up to pH 5) at the temperature of ≥120 °C and the pressure of ~50 bar. The unique point of the reported process is the almost quantitative recovery of indium from the LCD-waste that ensured via the combination of the reaction facilitatory effect of microwave exposure and the metal extraction capability of APCs. A method for the selective isolation of indium from the extractant solution and recycle of the chelant in solution is also described.

  14. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

    SciTech Connect

    Bazioti, C.; Kehagias, Th.; Pavlidou, E.; Komninou, Ph.; Karakostas, Th.; Dimitrakopulos, G. P.; Papadomanolaki, E.; Iliopoulos, E.; Walther, T.; Smalc-Koziorowska, J.

    2015-10-21

    We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults and threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.

  15. Characterization and exposure measurement for indium oxide nanofibers generated as byproducts in the LED manufacturing environment.

    PubMed

    Choi, Kwang-Min; An, Hee-Chul

    2016-01-01

    This article aimed to elucidate the physicochemical characteristics and exposure concentration of powder and airborne particles as byproducts generated from indium tin oxide thin film process by an electron beam evaporation method during maintenance in light-emitting diode manufacturing environment. The chemical composition, size, shape, and crystal structure of powder and airborne particles as byproducts were investigated using a scanning electron microscope equipped with energy dispersive spectrometer, and an X-ray diffractometer. The number and mass concentration measurements of airborne particles were performed by using an optical particle counter of direct-reading aerosol monitor and an inductively coupled plasma-mass spectrometry after sampling, respectively. The airborne particles are composed of oxygen and indium. On the other hand, the powder byproducts consist mostly of oxygen and indium, but tin was found as a minor component. The shapes of the airborne and powder byproducts were fiber type. The length and diameter of fibrous particles were approximately 500-2,000 nm and 30-50 nm, respectively. The powder byproducts indicated indium oxide nanofibers with a rhombohedral structure. On the other hand, the indium oxide used as a source material in the preparation of ITO target showed spherical morphology with a body-centered cubic structure, and it was the same as that of the pure crystalline indium oxide powder. During maintenance, the number concentrations ranged from 350-75,693 particles/ft(3), and arithmetic mean±standard deviation and geometric mean±geometric standard deviation were 11,624±15,547 and 4,846±4.12 particles/ft(3), respectively. Meanwhile, under the same conditions, the airborne mass concentrations of the indium based on respirable particle size (3.5 µm cut-point 50%) were 0.09-0.19 µg/m(3). Physicochemical characteristics of nanoparticle can affect toxicity so the fact that shape and crystal structure have changed is important. Thus

  16. Synthesis, characterization and catalytic activity of indium substituted nanocrystalline Mobil Five (MFI) zeolite

    SciTech Connect

    Shah, Kishor Kr.; Nandi, Mithun; Talukdar, Anup K.

    2015-06-15

    Highlights: • In situ modification of the MFI zeolite by incorporation of indium. • The samples were characterized by XRD, FTIR, TGA, UV–vis (DRS), SAA, EDX and SEM. • The incorporation of indium was confirmed by XRD, FT-IR, UV–vis (DRS), EDX and TGA. • Hydroxylation of phenol reaction was studied on the synthesized catalysts. - Abstract: A series of indium doped Mobil Five (MFI) zeolite were synthesized hydrothermally with silicon to aluminium and indium molar ratio of 100 and with aluminium to indium molar ratios of 1:1, 2:1 and 3:1. The MFI zeolite phase was identified by XRD and FT-IR analysis. In XRD analysis the prominent peaks were observed at 2θ values of around 6.5° and 23° with a few additional shoulder peaks in case of all the indium incorporated samples suggesting formation of pure phase of the MFI zeolite. All the samples under the present investigation were found to exhibit high crystallinity (∼92%). The crystallite sizes of the samples were found to vary from about 49 to 55 nm. IR results confirmed the formation of MFI zeolite in all cases showing distinct absorbance bands near 1080, 790, 540, 450 and 990 cm{sup −1}. TG analysis of In-MFI zeolites showed mass losses in three different steps which are attributed to the loss due to adsorbed water molecules and the two types TPA{sup +} cations. Further, the UV–vis (DRS) studies reflected the position of the indium metal in the zeolite framework. Surface area analysis of the synthesized samples was carried out to characterize the synthesized samples The analysis showed that the specific surface area ranged from ∼357 to ∼361 m{sup 2} g{sup −1} and the pore volume of the synthesized samples ranged from 0.177 to 0.182 cm{sup 3} g{sup −1}. The scanning electron microscopy studies showed the structure of the samples to be rectangular and twinned rectangular shaped. The EDX analysis was carried out for confirmation of Si, Al and In in zeolite frame work. The catalytic activities of

  17. Characterization and exposure measurement for indium oxide nanofibers generated as byproducts in the LED manufacturing environment.

    PubMed

    Choi, Kwang-Min; An, Hee-Chul

    2016-01-01

    This article aimed to elucidate the physicochemical characteristics and exposure concentration of powder and airborne particles as byproducts generated from indium tin oxide thin film process by an electron beam evaporation method during maintenance in light-emitting diode manufacturing environment. The chemical composition, size, shape, and crystal structure of powder and airborne particles as byproducts were investigated using a scanning electron microscope equipped with energy dispersive spectrometer, and an X-ray diffractometer. The number and mass concentration measurements of airborne particles were performed by using an optical particle counter of direct-reading aerosol monitor and an inductively coupled plasma-mass spectrometry after sampling, respectively. The airborne particles are composed of oxygen and indium. On the other hand, the powder byproducts consist mostly of oxygen and indium, but tin was found as a minor component. The shapes of the airborne and powder byproducts were fiber type. The length and diameter of fibrous particles were approximately 500-2,000 nm and 30-50 nm, respectively. The powder byproducts indicated indium oxide nanofibers with a rhombohedral structure. On the other hand, the indium oxide used as a source material in the preparation of ITO target showed spherical morphology with a body-centered cubic structure, and it was the same as that of the pure crystalline indium oxide powder. During maintenance, the number concentrations ranged from 350-75,693 particles/ft(3), and arithmetic mean±standard deviation and geometric mean±geometric standard deviation were 11,624±15,547 and 4,846±4.12 particles/ft(3), respectively. Meanwhile, under the same conditions, the airborne mass concentrations of the indium based on respirable particle size (3.5 µm cut-point 50%) were 0.09-0.19 µg/m(3). Physicochemical characteristics of nanoparticle can affect toxicity so the fact that shape and crystal structure have changed is important. Thus

  18. Development of an Indium bump bond process for silicon pixel detectors at PSI

    NASA Astrophysics Data System (ADS)

    Broennimann, Ch.; Glaus, F.; Gobrecht, J.; Heising, S.; Horisberger, M.; Horisberger, R.; Kästli, H. C.; Lehmann, J.; Rohe, T.; Streuli, S.

    2006-09-01

    The hybrid pixel detectors used in the high-energy physics experiments currently under construction use a vertical connection technique, the so-called bump bonding. As the pitch below 100 μm, required in these applications, cannot be fulfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflowed indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflowed afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self-alignment and obtaining high mechanical strength. For the placement of the chips a manual and an automatic machine were constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatization and is therefore much more suited for producing hundreds of modules with a well-defined geometry. The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) has started in early 2006.

  19. Indium telluride nanotubes: Solvothermal synthesis, growth mechanism, and properties

    SciTech Connect

    Zhou, Liyan; Yan, Shancheng; Lu, Tao; Shi, Yi; Wang, Jianyu; Yang, Fan

    2014-03-15

    hydrogen storage, compared with the nanowires. The nanotube device also has a broad light detection range from 300 nm to 1100 nm, covering the UV–visible–NIR region. This good performance of In{sub 2}Te{sub 3} nanotubes may enable significant advancements of new photodetection and photosensing applications. Highlights: • The In{sub 2}Te{sub 3} nanotube device also has a broad light detection range from 300 nm to 1100 nm. • The nanotube is 137.85 m{sup 2} g{sup −1}, which makes it suitable for gas sensing and hydrogen storage. • A possible growth mechanism of the indium telluride nanotubes was proposed. • In addition, no In{sub 2}Te{sub 3} nanotubes have been reported until now.

  20. [Mechanism of renal elimination of 2 elements of group IIIA of the periodic table : aluminum and indium].

    PubMed

    Galle, P

    1981-01-01

    Aluminium and indium, two elements of group IIIA of the periodic table, are concentrated by the kidney inside lysosomes of proximal tubule cell. In these lysosomes, aluminium and indium are precipitated as non-soluble phosphate salts and these precipitates are then expelled in the tubular lumen and eliminated with the urinary flow. These data have been visualized by analytical microscopy (ion microscopy and X ray microanalysis). Local acid phosphatases are assumed to permit the concentration of aluminium and indium salts inside the lysosomes.

  1. Indium-111 leukocyte scintigraphic detection of subclinical osteomyelitis complicating delayed and nonunion long bone fractures: a prospective study

    SciTech Connect

    Esterhai, J.L. Jr.; Goll, S.R.; McCarthy, K.E.; Velchik, M.; Alavi, A.; Brighton, C.T.; Heppenstall, R.B.

    1987-01-01

    Twenty patients were studied prospectively with indium-labeled leukocyte imaging to evaluate its effectiveness in differentiating noninfected delayed or nonunion from osteomyelitis complicating these entities. All patients underwent an open surgical procedure within 24 h of the scan. Bone specimens from the nonunion site were obtained for microbiological and histological analysis to confirm the presence or absence of osteomyelitis. In these twenty patients, the sensitivity of the indium scintigraphy was 100%, the specificity 100%, and the overall accuracy 100%. Indium-labeled leukocyte scintigraphy is significantly more accurate than /sup 99m/technetium and /sup 67/gallium imaging had been, when studied earlier, in detecting subclinical osteomyelitis complicating nonunion. Indium-labeled leukocyte scintigraphy should supplant sequential technetium and gallium studies in this patient population when the surgeon must determine whether subclinical osteomyelitis is complicating fracture management of delayed and nonunions.

  2. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

    SciTech Connect

    Yin, Yao; Sun, Huabin; Chen, Peng; Sang, Liwen; Dierre, Benjamin; Sumiya, Masatomo; Sekiguchi, Takashi; Zheng, Youdou; Shi, Yi

    2015-05-15

    The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, which influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.

  3. Determination of indium in geological materials by electrothermal-atomization atomic absorption spectrometry with a tungsten-impregnated graphite furance

    USGS Publications Warehouse

    Zhou, L.; Chao, T.T.; Meier, A.L.

    1984-01-01

    The sample is fused with lithium metaborate and the melt is dissolved in 15% (v/v) hydrobromic acid. Iron(III) is reduced with ascorbic acid to avoid its coextraction with indium as the bromide into methyl isobutyl ketone. Impregnation of the graphite furnace with sodium tungstate, and the presence of lithium metaborate and ascorbic acid in the reaction medium improve the sensitivity and precision. The limits of determination are 0.025-16 mg kg-1 indium in the sample. For 22 geological reference samples containing more than 0.1 mg kg-1 indium, relative standard deviations ranged from 3.0 to 8.5% (average 5.7%). Recoveries of indium added to various samples ranged from 96.7 to 105.6% (average 100.2%). ?? 1984.

  4. GEMAS: Concentrations and origin of indium in agricultural soil of Europe

    NASA Astrophysics Data System (ADS)

    Ladenberger, Anna; Sadeghi, Martiya; Demetriades, Alecos; Reimann, Clemens; Birke, Manfred; Andersson, Madelen; Jonsson, Erik

    2014-05-01

    Indium is classified as a critical metal, urgently needed in the electronics industry, especially for the production of solar panels and LCD screens. It is a volatile chalcophile rare element and its primary sources are different types of sulphide ore deposits. Although sphalerite is the main host mineral for indium, chalcopyrite-rich ores usually contain the highest contents of this element. Apart from common sulphides, higher indium concentrations can occur in cassiterite, wolframite and magnetite, in addition to few known indium minerals such as roquesite. Indium is a very rare element and its determination needs a technique with very low detection limits. Data for In are hardly ever provided in geochemical data sets due to its function as an internal standard when using the ICP-MS for analysis. Within the GEMAS project, over 4000 samples of agricultural (Ap) and grazing land (Gr) soil have been collected, and indium concentrations have been measured by ICP-MS in an aqua regia extraction. The median value of aqua regia extractable In in European soil is 0.0176 mg/kg in the Ap and 0.0177 mg/kg in the Gr samples. The most striking pattern on an In distribution map of Europe in an aqua regia extraction is the large difference between northern (low - median 0.012 mg/kg In in the Ap samples) and southern Europe (high - median 0.021 mg/kg In in the Ap samples). The boundary between predominantly high and low concentrations follows exactly the southernmost limit of the last glaciation. In southern Scandinavia, clay-rich soil is indicated by In anomalies, as is the Oslo Rift and the old silver mine at Kongsberg (Norway). Generally, distinct In anomalies mark many of the famous old mining areas of the continent, typically those featuring relatively young hydrothermal deposits (northern Portugal, Iberian Pyrite Belt, Cornwall in the UK, Harz in Germany and Erzgebirge at the German/Czech border), and granitic intrusions (probably related to associated Sn and skarn

  5. Indium Growth and Island Height Control on Si Submonolayer Phases

    SciTech Connect

    Chen, Jizhou

    2009-01-01

    is no clear oscillations in the g(s) curve as the In on Pb-α phase. This may be due to the extra mobility of In atoms, which causes the In bct islands to grow too fast to be observed in diffraction or STM (Ch.5). From these experiments we can see the importance of Pb-α phase in growth of In islands. It is the best interface to grow In islands in the phases we have experimented. Recent experiments show that the Existence of Pb will decrease the diffusion speed of In. In Ch.6 we have shown that In atoms diffusion is so fast that the bct spots are not visible in diffraction. But when we put some Pb onto the In surface, we can see the bct spots, although very weak. So Pb should play an role in slowing down the indium atoms diffusion. The interaction of Pb and In may play a role, but it is still not fully understood. So the general conclusion of this thesis is that In/Pb interface has extraordinary properties and may have potential in self-assembling growth.

  6. Complete titanium substitution by boron in a tetragonal prism: exploring the complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) by experiment and theory.

    PubMed

    Fokwa, Boniface P T; Hermus, Martin

    2011-04-18

    Polycrystalline samples and single crystals of four members of the new complex boride series Ti(3-x)Ru(5-y)Ir(y)B(2+x) (0 ≤ x ≤ 1 and 1 < y < 3) were synthesized by arc-melting the elements in a water-cooled copper crucible under an argon atmosphere. The new silvery phases were structurally characterized by powder and single-crystal X-ray diffraction as well as energy- and wavelength-dispersive X-ray spectroscopy analyses. They crystallize with the tetragonal Ti(3)Co(5)B(2) structure type in space group P4/mbm (No. 127). Tetragonal prisms of Ru/Ir atoms are filled with titanium in the boron-poorest phase (Ti(3)Ru(2.9)Ir(2.1)B(2)). Gradual substitution of titanium by boron then results in the successive filling of this site by a Ti/B mixture en route to the complete boron occupation, leading to the boron-richest phase (Ti(2)Ru(2.8)Ir(2.2)B(3)). Furthermore, both ruthenium and iridium share two sites in these structures, but a clear Ru/Ir site preference is found. First-principles density functional theory calculations (Vienna ab initio simulation package) on appropriate structural models (using a supercell approach) have provided more evidence on the stability of the boron-richest and -poorest phases, and the calculated lattice parameters corroborate very well with the experimentally found ones. Linear muffin-tin orbital atomic sphere approximation calculations further supported these findings through crystal orbital Hamilton population bonding analyses, which also show that the Ru/Ir-B and Ru/Ir-Ti heteroatomic interactions are mainly responsible for the structural stability of these compounds. Furthermore, some stable and unstable phases of this complex series could be predicted using the rigid-band model. According to the density of states analyses, all phases should be metallic conductors, as was expected from these metal-rich borides. PMID:21428308

  7. Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

    NASA Astrophysics Data System (ADS)

    Chen, Yung-Sheng; Liao, Che-Hao; Kuo, Chie-Tong; Tsiang, Raymond Chien-Chao; Wang, Hsiang-Chen

    2014-07-01

    Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded.

  8. Recycling of indium from CIGS photovoltaic cells: potential of combining acid-resistant nanofiltration with liquid-liquid extraction.

    PubMed

    Zimmermann, Yannick-Serge; Niewersch, Claudia; Lenz, Markus; Kül, Zöhre Zohra; Corvini, Philippe F-X; Schäffer, Andreas; Wintgens, Thomas

    2014-11-18

    Electronic consumer products such as smartphones, TV, computers, light-emitting diodes, and photovoltaic cells crucially depend on metals and metalloids. So-called "urban mining" considers them as secondary resources since they may contain precious elements at concentrations many times higher than their primary ores. Indium is of foremost interest being widely used, expensive, scarce and prone to supply risk. This study first investigated the capability of different nanofiltration membranes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leachates under low pH conditions and low transmembrane pressure differences (<3 bar). Retentates were then subjected to a further selective liquid-liquid extraction (LLE). Even at very acidic pH indium was retained to >98% by nanofiltration, separating it from parts of the Ag, Sb, Se, and Zn present. LLE using di-(2-ethylhexyl)phosphoric acid (D2EHPA) extracted 97% of the indium from the retentates, separating it from all other elements except for Mo, Al, and Sn. Overall, 95% (2.4 g m(-2) CIGS) of the indium could be extracted to the D2EHPA phase. Simultaneously, by nanofiltration the consumption of D2EHPA was reduced by >60% due to the metal concentration in the reduced retentate volume. These results show clearly the potential for efficient scarce metal recovery from secondary resources. Furthermore, since nanofiltration was applicable at very low pH (≥ 0.6), it may be applied in hydrometallurgy typically using acidic conditions.

  9. Indium 111 platelet imaging for the detection of deep venous thrombosis and pulmonary embolism in patients without symptoms after surgery

    SciTech Connect

    Clarke-Pearson, D.L.; Coleman, R.E.; Siegel, R.; Synan, I.S.; Petry, N.

    1985-07-01

    Indium 111 platelet imaging for the detection of deep vein thrombosis and pulmonary emboli was performed in 171 patients after abdominal and pelvic surgery. Fifteen patients were found to have inadequate circulating blood pools of indium 111 platelets, making the study nondiagnostic. Of 156 patients with technically satisfactory images, 46 (29.5%) had images consistent with deep venous thrombosis and/or pulmonary emboli. The incidence, time of occurrence, and location of thromboemboli was similar to those of other reports of postoperative patients groups studied by iodine 125 fibrinogen uptake testing. Eighty patients had normal indium 111 platelets and 30 patients had diffusely distributed indium 111 platelets found in the operative field, suggesting accumulation in a postoperative hematoma. None of these results was confused with a diagnosis of deep venous thrombosis. When compared with another accurate diagnostic test in 23 patients, indium 111 platelet imaging was found to have a sensitivity of 100% and specificity of 90%. The technique of indium 111 platelet imaging is performed easily in patients after surgery with some limitations as to the use of donor platelets and the occasionally altered imaging of the operative site. This diagnostic technique enjoys the distinct advantage in that it allows surveillance of the legs, pelvis, abdomen, and chest by a single method, making it a near-ideal method of postoperative thromboembolism surveillance.

  10. Recovery of indium from used LCD panel by a time efficient and environmentally sound method assisted HEBM

    SciTech Connect

    Lee, Cheol-Hee; Jeong, Mi-Kyung; Fatih Kilicaslan, M.; Lee, Jong-Hyeon; Hong, Hyun-Seon; Hong, Soon-Jik

    2013-03-15

    Highlights: ► In this study, we recovered indium from a waste LCD panel. ► The ITO glass was milled to obtain micron size particles in a HEBM machine. ► Effect of particle size of ITO glass on the amount of dissolved In was investigated. ► In a very short time, a considerable amount of In was recovered. ► Amount of HCl in acid solution was decreased to 40 vol.%. - Abstract: In this study, a method which is environmentally sound, time and energy efficient has been used for recovery of indium from used liquid crystal display (LCD) panels. In this method, indium tin oxide (ITO) glass was crushed to micron size particles in seconds via high energy ball milling (HEBM). The parameters affecting the amount of dissolved indium such as milling time, particle size, effect time of acid solution, amount of HCl in the acid solution were tried to be optimized. The results show that by crushing ITO glass to micron size particles by HEBM, it is possible to extract higher amount of indium at room temperature than that by conventional methods using only conventional shredding machines. In this study, 86% of indium which exists in raw materials was recovered about in a very short time.

  11. A study of thermal cycling and radiation effects on indium and solder bump bonding

    SciTech Connect

    Selcuk Cihangir et al.

    2001-09-12

    The BTeV hybrid pixel detector is constructed of readout chips and sensor arrays which are developed separately. The detector is assembled by flip-chip mating of the two parts. This method requires the availability of highly reliable, reasonably low cost fine-pitch flip-chip attachment technology. We have tested the quality of two bump-bonding technologies; indium bumps (by Advanced Interconnect Technology Ltd. (AIT) of Hong Kong) and fluxless solder bumps (by MCNC in North Carolina, USA). The results have been presented elsewhere[1]. In this paper we describe tests we performed to further evaluate these technologies. We subjected 15 indium bump-bonded and 15 fluxless solder bump-bonded dummy detectors through a thermal cycle and then a dose of radiation to observe the effects of cooling, heating and radiation on bump-bonds.

  12. Limitations of indium-111 leukocyte scanning in febrile renal transplant patients

    SciTech Connect

    Sebrechts, C.; Biberstein, M.; Klein, J.L.; Witztum, K.F.

    1986-04-01

    Indium-111-labeled leukocyte scanning was evaluated as a technique for investigating possible abscess as the cause of fever in 10 renal allograft recipients under therapy for rejection, acute tubular necrosis, or urinary infection. The usefulness of the method in this setting was found to be limited by marked nonspecificity of renal, pulmonary, and other focal leukocyte accumulation. Although wound infections were correctly identified, false-positive scans resulted in multiple nonproductive consultations and radiologic procedures (some invasive) and contributed to the decision to perform one negative exploratory laparotomy. Such generalized nonspecificity in this patient population is in distinct contrast to the experience with this diagnostic test in nontransplant patients, and has not previously been reported. Possible explanations and implications of these findings are discussed. Consequently, great caution is recommended in the use of indium-111 leukocyte scans to diagnose infection in febrile renal transplant patients who present in a similar clinical setting.

  13. Role of indium in highly crystalline ZnO thin films

    SciTech Connect

    Singh, Anil; Chaudhary, Sujeet; Pandya, Dinesh K.

    2013-02-05

    Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73 Multiplication-Sign 10{sup -3} ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63 Multiplication-Sign 10{sup -3} ohm.cm and mobility of 126.4 cm{sup 2}/V.s are achieved.

  14. Role of indium in highly crystalline ZnO thin films

    NASA Astrophysics Data System (ADS)

    Singh, Anil; Chaudhary, Sujeet; Pandya, Dinesh K.

    2013-02-01

    Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73×10-3 ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63×10-3 ohm.cm and mobility of 126.4 cm2/V.s are achieved.

  15. Synthesis and Raman spectrum of crystalline indium oxide micro-rods with rectangular cross-section

    SciTech Connect

    Yadav, Kavita Mehta, B. R. Singh, J. P.

    2014-04-24

    Indium oxide (IO) micro-rods with rectangular cross section were synthesized without catalyst in chemical vapor deposition (CVD) system by carbothermal reduction of indium oxide at 900 °C. The rectangular micro-rods (RMRs) were grown on Si substrate in presence of water vapors and Ar atmosphere. Water was used as oxidizing reagent which controls the In/O stoichiometry in RMRs. The IO RMRs have dimensions of about 20 μm in length and about 1 μm width. The growth process involved in formation of RMRs is vapor-solid (VS) mechanism. Raman analysis was performed to obtain the phonon modes of the RMRs and the peaks of Raman spectrum were indexed to the modes being associated with bcc−In{sub 2}O{sub 3}.

  16. Effects of nitrogen flow rate on the properties of indium oxide thin films.

    PubMed

    Cho, Shinho; Kim, Moonhwan

    2013-11-01

    Indium oxide thin films are deposited on glass substrates at nitrogen flow rates of 0-50% by rf reactive magnetron sputtering and are characterized for their structural, morphological, electrical, and optical properties. The experimental results showed that the control of nitrogen flow rate has a significant effect on the properties of the In2O3 thin films. The change in the preferred growth orientation from (222) to (400) planes is observed above a nitrogen flow rate of 10%. The average optical transmittance in the wavelength range of 400-1100 nm is increased from 85.4% at 0% to 86.7% at 50%, where the smallest value of the optical band gap energy is obtained. In addition to the improvement in crystallinity of the films, the nitrogen flow rate plays a crucial role in the fabrication of high-quality indium oxide films and devices. PMID:24245335

  17. A multi-step solvent-free mechanochemical route to indium(iii) complexes.

    PubMed

    Wang, Jingyi; Ganguly, Rakesh; Yongxin, Li; Díaz, Jesus; Soo, Han Sen; García, Felipe

    2016-05-10

    Mechanochemistry is well-established in the solid-phase synthesis of inorganic materials but has rarely been employed for molecular syntheses. In recent years, there has been nascent interest in 'greener' synthetic methods with less solvent, higher yields, and shorter reaction times being especially appealing to the fine chemicals and inorganic catalyst industries. Herein, we demonstrate that main-group indium(iii) complexes featuring bis(imino)acenaphthene (BIAN) ligands are readily accessible through a mechanochemical milling approach. The synthetic methodology reported herein not only bypasses the use of large solvent quantities and transition metal reagents for ligand synthesis, but also reduces reaction times dramatically. These new main-group complexes exhibit the potential to be reduced to indium(i) compounds, which may be employed as photosensitizers in organic catalyses and functional materials. PMID:27112317

  18. Adhesion enhancement of indium tin oxide (ITO) coated quartz optical fibers

    NASA Astrophysics Data System (ADS)

    Wang, Yihua; Liu, Jing; Wu, Xu; Yang, Bin

    2014-07-01

    Transparent conductive indium tin oxide (ITO) film was prepared on optical fiber through a multi-step sol-gel process. The influence of annealing temperature on the adhesion of ITO coated optical fibers was studied. Different surface treatments were applied to improve the adhesion between ITO film and quartz optical fiber. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction analysis (XRD), UV-vis spectrophotometer and Avometer were used to characterize the morphology, crystal structure and photo-electric properties. A thermal shock test was used to evaluate the adhesion. The result shows that the adhesion between ITO film and quartz optical fiber can be strongly influenced by the annealing process, and optimal adhesion can be acquired when annealing temperature is 500 °C. Surface treatments of ultrasonic cleaning and the application of surface-active agent have effectively enhanced the adhesion and photo-electric properties of indium tin oxide film coated quartz optical fiber.

  19. A multi-step solvent-free mechanochemical route to indium(iii) complexes.

    PubMed

    Wang, Jingyi; Ganguly, Rakesh; Yongxin, Li; Díaz, Jesus; Soo, Han Sen; García, Felipe

    2016-05-10

    Mechanochemistry is well-established in the solid-phase synthesis of inorganic materials but has rarely been employed for molecular syntheses. In recent years, there has been nascent interest in 'greener' synthetic methods with less solvent, higher yields, and shorter reaction times being especially appealing to the fine chemicals and inorganic catalyst industries. Herein, we demonstrate that main-group indium(iii) complexes featuring bis(imino)acenaphthene (BIAN) ligands are readily accessible through a mechanochemical milling approach. The synthetic methodology reported herein not only bypasses the use of large solvent quantities and transition metal reagents for ligand synthesis, but also reduces reaction times dramatically. These new main-group complexes exhibit the potential to be reduced to indium(i) compounds, which may be employed as photosensitizers in organic catalyses and functional materials.

  20. /sup 111/Indium leucocyte scanning in ampicillin-associated right-sided hemorrhagic colitis

    SciTech Connect

    Keshavarzian, A.; Saverymuttu, S.H.; Chadwick, V.S.

    1984-07-01

    Hemorrhagic colitis is a rare but well-recognized complication with ampicillin or penicillin derivative treatment. Early colonoscopy has been advocated in establishing the diagnosis by demonstrating the characteristic pattern of only right-sided involvement and so distinguishing it from other colitides. The authors report a patient who developed colitis after amoxycillin therapy in whom /sup 111/Indium leucocyte scan demonstrated right-sided colitis which alerted them to the diagnosis. Discontinuation of the antibiotic resulting in rapid improvement, and return of the /sup 111/Indium leucocyte scan to normal in this patient suggests that ampicillin-associated colitis should not be considered purely as a hemorrhagic disease but may in some cases have an inflammatory component.

  1. Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Mizutani, S.; Nakashima, S.; Iwaya, M.; Takeuchi, T.; Kamiyama, S.; Akasaki, I.; Kondo, T.; Teramae, F.; Suzuki, A.; Kitano, T.; Mori, M.; Matsubara, M.

    2013-03-01

    The basic properties of indium-zinc oxide (IZO) were investigated from the view point of the potential of light-emitting diodes (LEDs) for nanostructured transparent contact. The resistivity and contact resistance to p-GaN were obtained to be 2.5×10-4 Ωcm and 9.4×10-4 Ωcm2, respectively, which are comparable to those of indium-tin oxide (ITO). The light output of the LED with the moth-eye IZO was 10 % and 40 % higher than that of the LED with the moth-eye ITO and that of the LED without the moth-eye structure, respectively.

  2. Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands

    SciTech Connect

    Sobolev, V. V. Perevoshchikov, D. A.

    2015-05-15

    The bands and densities of states of d bands in indium antimonide (InSb) are determined taking into account and disregarding the spin-orbit interaction. It is established that taking into account the effect of spin-orbit interaction results also in a substantial change in the dispersion of the obtained bands instead of only in the doublet splitting of the band of core d levels at ∼(0.79–0.86) eV. It is established that it is indium 4d states with e{sub g} and t{sub 2g} symmetry that give the main contribution to the density of states. The calculations are carried out by the LAPW method with the exchange-correlation potential in the generalized gradient approximation (LAPW + GGA)

  3. Electron conduction through quasi-one-dimensional indium wires on silicon

    NASA Astrophysics Data System (ADS)

    Uchihashi, Takashi; Ramsperger, Urs

    2002-06-01

    Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4×1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a conductance per square as high as 100 μS, with global conduction despite numerous surface steps. A complete growth of indium wires up to both the surface steps and the lithographically printed electrodes is essential for the macroscopic transport. The system exhibits a metal-insulator transition at 130 K, consistent with a recent ultraviolet photoemission study [H. W. Yeom, S. Takeda, E. Rotenberg, I. Matsuda, K. Horikoshi, J. Schaefer, C. M. Lee, S. D. Kevan, T. Ohta, T. Nagao, and S. Hasegawa, Phys. Rev. Lett. 82, 4898 (1999)].

  4. Thermoelectric properties of indium doped PbTe{sub 1-y}Se{sub y} alloys

    SciTech Connect

    Bali, Ashoka; Mallik, Ramesh Chandra; Wang, Heng; Snyder, G. Jeffrey

    2014-07-21

    Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe{sub 1-y}Se{sub y} alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content.

  5. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  6. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE PAGES

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  7. Effect of InAlAs window layer on efficiency of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Landis, Geoffrey A.

    1992-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide bandgap, lattice-matched indium aluminum arsenide (In(0.52)Al(0.48)As) window layer on the performance of InP solar cells was investigated by using the numerical code PC-1D. The p(+)n InP solar cell performance improved significantly with the use of the window layer. No improvement was seen for the n(+)p InP cells. The cell results were explained by the band diagram of the heterostructure and the conduction band energy discontinuity. The calculated current voltage and internal quantum efficiency results clearly demonstrated that In(0.52)Al(0.48)As is a very promising candidate for a window layer material for p(+)n InP solar cells.

  8. Indium plasma in single- and two-color mid-infrared fields: Enhancement of tunable harmonics

    NASA Astrophysics Data System (ADS)

    Ganeev, R. A.; Wang, Zhe; Lan, Pengfei; Lu, Peixiang; Suzuki, M.; Kuroda, H.

    2016-04-01

    The tuning of odd and even high-order harmonics of ultrashort pulses along the strong resonance of laser-produced indium plasma using an optical parametric amplifier of white-light continuum radiation (1250-1400 nm) allowed observation of different harmonics enhanced in the vicinity of the 4 d105 s21S0→4 d95 s25 p 1P1 transition of In ii ions. We demonstrate various peculiarities and discuss the theoretical model of the phenomenon of tunable harmonics enhancement in the region of 62 nm using indium plasma. With the theoretical analysis we can reproduce the experimental observations and characterize the dynamics of the resonant harmonic emissions.

  9. Effect of InAlAs window layer on the efficiency of indium phosphide solar cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Landis, G. A.

    1991-01-01

    Indium phosphide (InP) solar cell efficiencies are limited by surface recombination. The effect of a wide-bandgap lattice-matched indium aluminum arsenide (In0.52Al0.48As) window layer on the performance of InP solar cells was investigated using a numerical code PC-1D. The p(+)n InP solar cell performance improves significantly with the use of a window layer. No improvement is seen for n(+)p InP cells. Cell results are explained by the band diagram of the heterostructure and the conduction-band energy discontinuity. The calculated I-V and internal quantum efficiency results clearly demonstrate that In0.52Al0.48As is a promising candidate as a window layer material for p(+)n InP solar cells.

  10. Experimental investigation of effect of aromatic hydrocarbons on resistivity of indium selenide

    SciTech Connect

    Drapak, S. I. Kovalyuk, Z. D.

    2007-10-15

    The regular features in the variation of resistivity of n-and p-type indium selenide in the direction parallel to the hexagonal symmetry axis of crystals during its intercalation with aromatic-hydrocarbon molecules (benzene and naphthalene) are investigated. For the first time, the possibility of decreasing the resistivity of n-InSe aged under pressure of C{sub 10}H{sub 8} saturated vapors to values comparable to those in semiconductors used for manufacturing high-performance solar cells (for example, Si) is found. The qualitative model explaining the transition of n-type indium monoselenide from a 'high-resistance' to 'low-resistance' state during its intercalation with naphthalene molecules is proposed.

  11. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    SciTech Connect

    Si, Weidong E-mail: qiangli@bnl.gov; Zhang, Cheng; Wu, Lijun; Ozaki, Toshinori; Gu, Genda; Li, Qiang E-mail: qiangli@bnl.gov

    2015-08-31

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.

  12. Temperature sensibility of the birefringence properties in side-hole photonic crystal fiber filled with Indium

    SciTech Connect

    Reyes-Vera, Erick Gómez-Cardona, Nelson D.; Chesini, Giancarlo; Cordeiro, Cristiano M. B.; Torres, Pedro

    2014-11-17

    We report on the temperature sensitivity of the birefringence properties of a special kind of photonic crystal fiber containing two side holes filled with Indium metal. The modulation of the fiber birefringence is accomplished through the stress field induced by the expansion of the metal. Although the fiber was made at low gas pressures during the indium infiltration process, the birefringence showed anomalous property at a relatively low temperature value, which is completely different from those reported in conventional-like fibers with two holes filled with metal. By modeling the anisotropic changes induced by the metal expansion to the refractive index within the fiber, we are able to reproduce the experimental results. Our results have practical relevance for the design of devices based on this technology.

  13. Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

    NASA Astrophysics Data System (ADS)

    Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

    2009-10-01

    Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

  14. Preparation of a silicon heterojunction photodetector from colloidal indium oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Ismail, Raid A.; Ali, Abdulrahman K.; Hassoon, Khaleel I.

    2013-10-01

    A colloidal indium oxide (In2O3) nanoparticles (NPs) were synthesized by using a Q-switched Nd:YAG laser ablation of indium target in water at room temperature. Optical absorption and x-ray diffraction (XRD) investigation of the prepared samples confirm the formation of In2O3 NPs. A solution-processed silicon heterojunction photodetector, fabricated by drop cast film of colloidal In2O3 NPs onto n-type single crystal silicon wafer, is demonstrated. I-V characteristics of In2O3 NPs/Si heterojunction under dark and illumination conditions confirmed the rectifying behavior and the good photoresponse. The built-in-voltage was determined from the C-V measurements which revealed an abrupt junction.

  15. Low-temperature thin-film indium bonding for reliable wafer-level hermetic MEMS packaging

    NASA Astrophysics Data System (ADS)

    Straessle, R.; Pétremand, Y.; Briand, D.; Dadras, M.; de Rooij, N. F.

    2013-07-01

    This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsulation and packaging of delicate and temperature sensitive devices. This indium-bonding technology enables bonding of surface materials commonly used in MEMS technology. The temperature is kept below 140 °C for all process steps and no surface treatment is applied before and during bonding. This bonding technology allows hermetic sealing at 140 °C with a leak rate below 4 × 10-12 mbar l s-1 at room temperature. The tensile strength of the bonds up to 25 MPa goes along with a very high yield.

  16. Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

    2016-08-01

    Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

  17. Indium-111 labeled leukocyte uptake: false-positive results in noninfected pseudoaneurysms

    SciTech Connect

    Gilbert, B.R.; Cerqueira, M.D.; Vea, H.W.; Nelp, W.B.

    1986-03-01

    Indium-111 (In-111) leukocyte scintigraphy was performed in two patients with postsurgical pseudoaneurysms as part of preoperative evaluation for evidence of graft infection. Despite positive In-111 uptake by the pseudoaneurysms, surgical and pathologic examinations failed to reveal any evidence of infection. The most likely explanation for the false-positive results is the labeling of contaminating platelets and erythrocytes in the leukocyte mixture. Caution must be exercised in interpretation of In-111 leukocyte scans in patients with postsurgical pseudoaneurysms.

  18. Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition.

    PubMed

    Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

    2016-09-01

    Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.

  19. Pulmonary toxicity of indium-tin oxide production facility particles in rats

    PubMed Central

    Badding, Melissa A.; Fix, Natalie R.; Orandle, Marlene S.; Barger, Mark W.; Dunnick, Katherine M.; Cummings, Kristin J.; Leonard, Stephen S.

    2016-01-01

    Indium-tin oxide (ITO) is used to make transparent conductive coatings for touch-screen and liquid crystal display electronics. Occupational exposures to potentially toxic particles generated during ITO production have increased in recent years as the demand for consumer electronics continues to rise. Previous studies have demonstrated cytotoxicity in vitro and animal models have shown pulmonary inflammation and injury in response to various indium-containing particles. In humans, pulmonary alveolar proteinosis (PAP) and fibrotic interstitial lung disease have been observed in ITO facility workers. However, which indium materials or specific processes in the workplace may be the most toxic to workers is unknown. Here we examined the pulmonary toxicity of three different particle samples that represent real-life worker exposures, as they were collected at various production stages throughout an ITO facility. Indium oxide (In2O3), sintered ITO (SITO) and ventilation dust (VD) particles each caused pulmonary inflammation and damage in rats over a time course (1, 7 and 90 days post-intratracheal instillation), but SITO and VD appeared to induce greater toxicity in rat lungs than In2O3 at a dose of 1 mg per rat. Downstream pathological changes such as PAP and fibrosis were observed in response to all three particles 90 days after treatment, with a trend towards greatest severity in animals exposed to VD when comparing animals that received the same dose. These findings may inform workplace exposure reduction efforts and provide a better understanding of the pathogenesis of an emerging occupational health issue. Published 2015. This article is a U.S. Government work and is in the public domain in the USA. PMID:26472246

  20. Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition.

    PubMed

    Nayak, Pradipta K; Wang, Zhenwei; Alshareef, Husam N

    2016-09-01

    Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices. PMID:27376468

  1. SU-E-I-14: Comparison of Iodine-Labeled and Indium-Labeled Antibody Biodistributions

    SciTech Connect

    Williams, L

    2014-06-01

    Purpose: It is often assumed that animal biodistributions of novel proteins are not dependent upon the radiolabel used in their determination. In units of percent injected dose per gram of tissue (%ID/g), organ uptake results (u) may be obtained using either iodine or metal as radioactive labels. Iodination is preferred as it is a one-step process whereas metal labeling requires two chemical procedures and therefore more protein material. It is important to test whether the radioactive tag leads to variation in the uptake value. Methods: Uptakes of 3antibodies to Carcinoembryonic Antigen (CEA) were evaluated in a nude mouse model bearing 150 to 300 mg LS174T human colon cancer xenografts. Antibodies included diabody (56 kDa), minibody (80kDa) and intact M5A (150 kDa) anti-CEA cognates. Both radioiodine and indium-111 labels were used with uptakes evaluated at 7 time(t) points out to 96 h. Ratios (R) of u(iodine-label)/u(indium-label) were determined for liver, spleen, kidneys, lung and tumor. Results: Hepatic loss was rapid for diabody and minibody; by 24 h their R values were only 2%; i.e., uptake of iodine was 2% of that of indium for these 2 antibodies. By contrast, R for the intact cognate was 50% at that time point. Splenic results were similar. Tumor uptake ratios did not depend upon the antibody type and were 50% at 24 h. Conclusions: Relatively rapid loss of iodine relative to indium in liver and spleen was observed in lower mass antibodies. Tumor ratios were larger and independent of antibody type. Aside from tumor, the R ratio of uptakes depended on the antibody type. R values decreased monotonically with time in all tissues and for all cognates. Using this ratio, one can possibly correct iodine-based u (t) results so that they resemble radiometal-derived biodistributions.

  2. Absent splenic uptake of indium-111-oxine-labeled autologous leukocytes in functional asplenia

    SciTech Connect

    Hicks, R.J.; Young, W.; Shapiro, B.; Kuhl, D.E. )

    1991-03-01

    An incidental finding of absent splenic uptake of autologous, indium-111-oxine-labeled leukocytes in an immunosuppressed renal transplant recipient was documented to be associated with functional asplenia based on absence of technetium-99m-sulfur colloid clearance by a morphologically normal spleen. The patient had recently suffered an episode of disseminated varicella infection that might have led to the development of functional asplenia.

  3. Indium 111-labeled leukocyte scanning for detection of prosthetic vascular graft infection

    SciTech Connect

    Lawrence, P.F.; Dries, D.J.; Alazraki, N.; Albo, D. Jr.

    1985-01-01

    Recent animal and human studies have suggested that positive indium 111-labeled leukocyte scans may help establish the diagnosis of vascular graft infection; however, there is little information available about the predictive value of both positive and negative leukocyte scans in larger groups of patients. In this study 31 indium 111 leukocyte scans were performed prior to definitive treatment in 21 patients with suspected vascular graft infections. Patients with more than one leukocyte scan performed had either anatomically distinct sites of infection or rescanning of a potentially infected site after definitive treatment. Scans were performed according to the method of Baker et al., attaching 500 muCi of indium 111 to leukocytes with imaging 24 hours later. All patients with positive scans underwent surgical exploration of the area of leukocyte accumulation, with documentation of purulence and culture of the graft. Patients with negative scans were treated as if scan results were indeterminate and underwent surgical exploration for usual clinical indications; if no exploration was performed, the patient was followed up closely for at least 1 year. Twelve of 12 positive scans showed purulence or culture evidence of infection with three different organisms; in 15 instances of negative scans, two operations were performed with one infection noted, whereas no patient without surgery has had a graft infection at 10 months follow-up. In addition to localizing graft infections, two scans demonstrated a nonvascular site of infection. Positive scans also helped determine the extent of infection along the graft, allowing better planning of the surgical procedure. These results indicate that indium 111-labeled leukocyte scans help document and localize prosthetic vascular graft infections.

  4. Highly diastereoselective palladium-catalyzed indium-mediated allylation of chiral hydrazones.

    PubMed

    Balasubramanian, Narayanaganesh; Mandal, Tanmay; Cook, Gregory R

    2015-01-16

    The general and efficient palladium-catalyzed indium-mediated allylation of chiral hydrazones was accomplished with excellent yield (72-92%) and diastereoselectivity (up to 99:1). The development of this reaction and the substrate scope are described. The conversion was found to be proportional to the phosphine concentration, which provided insight into the mechanism and competing pathways of the redox transmetalation process.

  5. Pulmonary toxicity of indium-tin oxide production facility particles in rats.

    PubMed

    Badding, Melissa A; Fix, Natalie R; Orandle, Marlene S; Barger, Mark W; Dunnick, Katherine M; Cummings, Kristin J; Leonard, Stephen S

    2016-04-01

    Indium-tin oxide (ITO) is used to make transparent conductive coatings for touch-screen and liquid crystal display electronics. Occupational exposures to potentially toxic particles generated during ITO production have increased in recent years as the demand for consumer electronics continues to rise. Previous studies have demonstrated cytotoxicity in vitro and animal models have shown pulmonary inflammation and injury in response to various indium-containing particles. In humans, pulmonary alveolar proteinosis (PAP) and fibrotic interstitial lung disease have been observed in ITO facility workers. However, which indium materials or specific processes in the workplace may be the most toxic to workers is unknown. Here we examined the pulmonary toxicity of three different particle samples that represent real-life worker exposures, as they were collected at various production stages throughout an ITO facility. Indium oxide (In2O3), sintered ITO (SITO) and ventilation dust (VD) particles each caused pulmonary inflammation and damage in rats over a time course (1, 7 and 90 days post-intratracheal instillation), but SITO and VD appeared to induce greater toxicity in rat lungs than In2O3 at a dose of 1 mg per rat. Downstream pathological changes such as PAP and fibrosis were observed in response to all three particles 90 days after treatment, with a trend towards greatest severity in animals exposed to VD when comparing animals that received the same dose. These findings may inform workplace exposure reduction efforts and provide a better understanding of the pathogenesis of an emerging occupational health issue.

  6. Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

    NASA Astrophysics Data System (ADS)

    Jewett, Scott A.; Yoder, Jeffrey A.; Ivanisevic, Albena

    2012-11-01

    Devices containing III-V semiconductors such as InAs are increasingly being used in the electronic industry for a variety of optoelectronic applications. Furthermore, the attractive chemical, material, electronic properties make such materials appealing for use in devices designed for biological applications, such as biosensors. However, in biological applications the leaching of toxic materials from these devices could cause harm to cells or tissue. Additionally, after disposal, toxic inorganic materials can leach from devices and buildup in the environment, causing long-term ecological harm. Therefore, the toxicity of these materials along with their stability in physiological conditions are important factors to consider. Surface modifications are one common method of stabilizing semiconductor materials in order to chemically and electronically passivate them. Such surface modifications could also prevent the leaching of toxic materials by preventing the regrowth of the unstable surface oxide layer and by creating an effective barrier between the semiconductor surface and the surrounding environment. In this study, various surface modifications on InAs are developed with the goal of decreasing the leaching of indium and arsenic. The leaching of indium and arsenic from modified substrates was assessed in physiological conditions using inductively coupled plasma mass spectrometry (ICP-MS). Substrates modified with 11-mercapto-1-undecanol (MU) and graft polymerized with poly(ethylene) glycol (PEG) were most effective at preventing indium and arsenic leaching. These surfaces were characterized using contact angle analysis, ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Substrates modified with collagen and synthetic polyelectrolytes were least effective, due to the destructive nature of acidic environments on InAs. The toxicity of modified and unmodified InAs, along with raw indium, arsenic, and PEG components was assessed

  7. Novel solar light driven photocatalyst, zinc indium vanadate for photodegradation of aqueous phenol

    SciTech Connect

    Mahapure, Sonali A.; Ambekar, Jalindar D.; Nikam, Latesh K.; Marimuthu, R.; Kulkarni, Milind V.

    2011-05-15

    Graphical abstract: Novel photocatalyst, zinc indium vanadate (ZnIn{sub 2}V{sub 2}O{sub 9}) demonstrated and showed an excellent photocatalytic activity for phenol degradation under visible light. Research highlights: {yields} Designing and identification of a photocatalyst having prospective potential application to be used in visible light (400-800 nm). {yields} Successful synthesis of novel ZnIn{sub 2}V{sub 2}O{sub 9} by solid state route. {yields} Confirmation of the designed product using characterization techniques. {yields} Application study comprising photodegradation of aqueous phenol at visible light despite of UV radiations. -- Abstract: In the present investigation, we have demonstrated the synthesis of novel photocatalyst, zinc indium vanadate (ZIV) by solid-solid state route using respective oxides of zinc, indium and vanadium. This novel photocatalyst was characterized using XRD, FESEM, UV-DRS and FTIR in order to investigate its structural, morphological and optical properties. XRD clearly shows the formation of phase pure ZIV of triclinic crystal structure with good crystallinity. FESEM micrographs showed the clustered morphology having particle size between 0.5 and 1 {mu}m. Since, optical study showed the band gap around 2.8 eV, i.e. in visible region, we have performed the photocatalytic activity of phenol degradation under visible light irradiation. The photodecomposition of phenol by ZIV is studied for the first time and an excellent photocatalytic activity was obtained using this novel photocatalyst. Considering the band gap of zinc indium vanadate in visible region, it will also be the potential candidate for water splitting.

  8. Indium diffusion through high-k dielectrics in high-k/InP stacks

    SciTech Connect

    Dong, H.; Cabrera, W.; Santosh KC,; Brennan, B.; Qin, X.; McDonnell, S.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Galatage, R. V.; Zhernokletov, D.; Wallace, R. M.

    2013-08-05

    Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

  9. Advantage of indium-111 leukocytes over ultrasound in imaging an infected renal cyst

    SciTech Connect

    Fortner, A.; Taylor, A. Jr.; Alazraki, N.; Datz, F.L.

    1986-07-01

    Indium-111-labeled leukocyte scanning is a highly sensitive and specific method of detecting abscesses. This report describes a patient with polycystic kidneys and a single infected cyst. Ultrasound could not determine which cyst was infected, but the infected cyst could be localized by (/sup 111/In)leukocyte imaging in conjunction with a (/sup 99m/Tc)DMSA renal scan. The two radionuclide studies were used to identify an infected renal cyst and direct ultrasound guided aspiration.

  10. Localization of abscess in adult polycystic kidney by indium-111 leukocyte scan

    SciTech Connect

    Bretan, P.N. Jr.; Price, D.C.; McClure, R.D.

    1988-08-01

    In patients with adult polycystic kidney disease (APKD) infected cysts are difficult to localize with current radiographic techniques, especially those dependent on renal function. Indium-111 leukocyte (In-WBC) imaging is both highly sensitive and effective in detecting and localizing abscesses in patients with renal failure. We report on a patient with APKD and sepsis in whom computed tomography, ultrasound, and physical examination failed to locate the renal abscess, which was found by In-WBC scanning.

  11. Humidity-induced room-temperature decomposition of Au contacted indium phosphide

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1990-01-01

    It has been found that Au-contacted InP is chemically unstable at room temperature in a humid ambient due to the leaching action of indium nitrate islands that continually remove In from the contact metallization and thus, in effect, from the Inp substrate. While similar appearing islands form on Au-contacted GaAs, that system appears to be stable since leaching of the group III element does not take place.

  12. Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.

    PubMed

    Lee, Changhun; Ko, Yoonduk; Kim, Youngsung

    2013-12-01

    Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays. PMID:24266182

  13. Indium 111-granulocyte scanning in the assessment of disease extent and disease activity in inflammatory bowel disease. A comparison with colonoscopy, histology, and fecal indium 111-granulocyte excretion

    SciTech Connect

    Saverymuttu, S.H.; Camilleri, M.; Rees, H.; Lavender, J.P.; Hodgson, H.J.; Chadwick, V.S.

    1986-05-01

    Indium 111-leukocyte scanning has recently been introduced as a new method for imaging inflammatory bowel disease. The technique has recently been made more specific for acute inflammation by labeling a pure granulocyte fraction rather than the conventional mixed leukocyte preparation. We now report a prospective study comparing 111In-granulocyte scanning with endoscopy, histology, and fecal 111In-granulocyte excretion for the assessment of disease extent and severity in colonic inflammatory bowel disease. In 52 patients with Crohn's disease or ulcerative colitis, disease extent and severity were assessed macroscopically, histologically, or by scanning using a numerical grading system. Excellent correlations were found between both endoscopy and histology and 111In scans (r = 0.90 (endoscopy) and r = 0.90 (histology) for extent; r = 0.86 and r = 0.91 for disease activity). Severity graded by scanning also showed a close correlation with fecal 111In-granulocyte excretion (r = 0.90). Indium 111-granulocyte scans are a rapid, accurate, noninvasive means of assessing both disease extent and severity of colonic involvement in inflammatory bowel disease.

  14. Quantitation of acute experimental ocular inflammation with /sup 111/indium-leukocytes

    SciTech Connect

    Howes, E.L. Jr.; Cole, P.W.; Cruse, V.K.; Pollycove, M.

    1988-03-01

    The cellular component of an acute ocular inflammation in rabbits was measured with autologous leukocytes exogenously labeled with /sup 111/Indium tropolonate. Inflammation was induced by intravitreal bacterial lipopolysaccharide (LPS). After 16 hr blood was removed, leukocytes separated, labeled with /sup 111/Indium tropolonate and reinjected. Three cell fractions were examined: a leukocyte rich fraction which had been prepared with Dextran; and polymorphonuclear and mononuclear leukocyte fractions which had been prepared using a discontinuous Percoll gradient. Two hours after labeled leukocytes were injected, measurements of /sup 111/Indium were made in blood, plasma, the whole eye and in ocular compartments. From these data the numbers of each leukocyte population present were estimated and compared directly to histopathologic changes. Both polymorphonuclear and mononuclear leukocytes entered ocular tissues during the 2 hr period beginning 20 hr after LPS injection. Altered ocular vascular permeability was successfully measured with /sup 125/Iodine-albumin in some of these same rabbits. Both the number and type of inflammatory cell entering ocular tissues during a set period of time of the inflammatory response could thus be measured. This technique provides an opportunity to define the relationship of leukocyte infiltration and altered ocular vascular permeability in ocular tissues during the inflammatory response.

  15. Synthesis, characterization and study of band gap variations of vanadium doped indium oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Parhoodeh, Saeed; Kowsari, Mohammad

    2016-10-01

    In this study, effects of vanadium doping in crystal lattice structure of indium oxide (In2O3) were investigated. Indium oxide nanoparticles with different amounts of dopant concentrations were fabricated by a facile and cost effective method. X-ray diffraction (XRD) analysis revealed the formation of cubic phase for doped and undoped samples. It was observed that the lattice parameters of doped samples were decreased respect to the pure indium oxide, but the crystallite sizes and the particles' sizes of doped samples were increased in result of substitution of vanadium in crystal lattice of In2O3. The scanning electron microscope (SEM) images of samples showed that all samples have spherical shapes, and their distribution sizes are between 10 and 70 nm. It was found that the average sizes of nanoparticles were increased linearly with the amounts of dopant concentration. A red shift was founded in the band gap of vanadium doped samples respect to pure In2O3. The maximum of the band gap shift was observed for samples with 0.025 M concentration of dopant. Based on impedance spectroscopy data, it was found that impedances of samples are increased by increasing of dopant concentration for all frequencies which were tested in this study.

  16. Packaging of complete indium-free high reliable and high power diode laser array

    NASA Astrophysics Data System (ADS)

    Wang, Jingwei; Li, Xiaoning; Feng, Feifei; Liu, Yalong; Hou, Dong; Liu, Xingsheng

    2015-02-01

    High power diode lasers have been widely used in many fields. For many applications, a diode laser needs to be robust under on-off power-cycling as well as environmental thermal cycling conditions. To meet the requirements, the conduction cooled single bar CS-packaged diode laser arrays must have high durability to withstand thermal fatigue and long lifetime. In this paper, a complete indium-free bonding technology is presented for packaging high power diode laser arrays. Numerical simulations on the thermal behavior of CS-packaged diode laser array with different packaging structure were conducted and analyzed. Based on the simulation results, the device structure and packaging process of complete indium-free CS-packaged diode laser array were optimized. A series of high power hard solder CS (HCS) diode laser arrays were fabricated and characterized. Under the harsh working condition of 90s on and 30s off, good lifetime was demonstrated on 825nm 60W single bar CS-packaged diode laser with a lifetime test of more than 6100hours achieved so far with less 5% power degradation and less 1.5nm wavelength shift. Additionally, the measurement results indicated that the lower smile of complete indium-free CS-packaged diode laser arrays were achieved by advanced packaging process.

  17. Contrasting the grain boundary-affected performance of zinc and indium oxide transparent conductors.

    PubMed

    Vai, A T; Rashidi, N; Fang, Y; Kuznetsov, V L; Edwards, P P

    2016-06-01

    Zinc oxide-based transparent conductors have long been advanced for their potential as low-cost, earth-abundant replacements for the indium oxide-based materials that currently dominate in practical applications. However, this potential has yet to be realized because of the difficulties in producing zinc oxide thin films with the necessary high levels of electrical conductivity and environmental stability that are readily achieved using indium oxide. To better understand the fundamental reasons for this, polycrystalline zinc and indium oxide thin films were prepared across a range of deposition temperatures using the technique of spray pyrolysis. Electrical transport measurements of these samples both as a function of temperature and UV irradiation were correlated with film morphology to illustrate that the different grain boundary behaviour of these two materials is one of the key reasons for their divergent performance. This is a critical challenge that must be addressed before any substantial increase in the adoption of ZnO-based transparent conductors can take place. PMID:26952740

  18. Contrasting the grain boundary-affected performance of zinc and indium oxide transparent conductors

    NASA Astrophysics Data System (ADS)

    Vai, A. T.; Rashidi, N.; Fang, Y.; Kuznetsov, V. L.; Edwards, P. P.

    2016-06-01

    Zinc oxide-based transparent conductors have long been advanced for their potential as low-cost, earth-abundant replacements for the indium oxide-based materials that currently dominate in practical applications. However, this potential has yet to be realized because of the difficulties in producing zinc oxide thin films with the necessary high levels of electrical conductivity and environmental stability that are readily achieved using indium oxide. To better understand the fundamental reasons for this, polycrystalline zinc and indium oxide thin films were prepared across a range of deposition temperatures using the technique of spray pyrolysis. Electrical transport measurements of these samples both as a function of temperature and UV irradiation were correlated with film morphology to illustrate that the different grain boundary behaviour of these two materials is one of the key reasons for their divergent performance. This is a critical challenge that must be addressed before any substantial increase in the adoption of ZnO-based transparent conductors can take place.

  19. A method for following human lymphocyte traffic using indium-111 oxine labelling.

    PubMed Central

    Wagstaff, J; Gibson, C; Thatcher, N; Ford, W L; Sharma, H; Benson, W; Crowther, D

    1981-01-01

    A method is described whereby large numbers of human lymphocytes are separated from peripheral blood and labelled in vitro with indium-111 oxine. Following autologous reinjection, the distribution within the body is followed by means of serial blood samples, surface-probe counting and gamma camera imaging. The distribution of radioactivity following reinjection of heat-damaged labelled lymphocytes and free indium-111 oxine is different from that of 'normal' lymphocytes. The results suggest that the separation and labelling procedure does not cause significant physical damage to the lymphocytes The importance of restricting the specific lymphocyte activity to 20-40 microCi per 10(8) cells in order to minimize radiation damage to the lymphocytes is emphasized. Good resolution of lymphoid structures is obtained using gamma camera imaging and the changes recorded in organ distribution correlate well with data from animal models of lymphocyte migration. Thus, indium-111 oxine labelling of human lymphocytes provides a non-invasive method whereby the migratory properties of human lymphocytes can be followed. Images Fig. 2 Fig. 3 Fig. 4 PMID:7285387

  20. Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method.

    PubMed

    Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu

    2016-05-01

    We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt% + WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 x 10(19) cm(-3) to 8.58 x 10(21) cm(-3), while the resistivity varied from 3.15 x 10(-4) Ωcm to 2.26 x 10(-3) Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region.

  1. Resonance-state-induced superconductivity at high Indium contents in In-doped SnTe

    NASA Astrophysics Data System (ADS)

    Haldolaarachchige, Neel; Gobson, Quinn; Xie, Weiwei; Nielsen, Morten; Kushwaha, Satya; Cava, Robert; Cava's Group Team

    We report a reinvestigation of superconducting Sn1-xInxTe at both low and high In doping levels. Analysis of the superconductivity reveals a fundamental change as a function of x: the system evolves from a weakly coupled to a strongly coupled superconductor with increasing indium content. Hall Effect measurements further show that the carrier density does not vary linearly with Indium content; indeed at high Indium content, the samples are overall n-type, which is contrary to expectations of the standard picture of In1+ replacing Sn2+ in this material. Density functional theory calculations probing the electronic state of In in SnTe show that it does not act as a trivial hole dopant, but instead forms a distinct, partly flled In 5s - Te 5p hybridized state centered around EF, very different from what is seen for other nominal hole dopants such as Na, Ag, and vacant Sn sites. We conclude that superconducting In-doped SnTe therefore cannot be considered as a simple hole doped semiconductor.

  2. High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

    SciTech Connect

    Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma; Krupanidhi, S. B. Shinde, Satish; Nanda, K. K.; Roul, Basanta; Maiti, R.; Ray, S. K.

    2015-03-15

    Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In{sub 0.55}Ga{sub 0.45}N over non-polar (11-20) a-plane In{sub 0.17}Ga{sub 0.83}N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of In{sub x}Ga{sub 1−x}N alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.

  3. Characterization of indium oxide for the use as a counter-electrode in an electrochromic device

    SciTech Connect

    Yu, P.C.; Haas, T.E. . Dept. of Chemistry); Goldner, R.B. . Electro-Optics Technology Center); Cogan, S.F. )

    1991-01-01

    Thin films of indium oxide, In{sub 2}O{sub 3} (4000 {Angstrom}), deposited on commercially available In{sub 2}O{sub 3}: Sn (ITO)/glass by rf sputtering, have been examined for potential application as a counter-electrode material in an electrochromic device, based on their chemical, structural, and optical properties. Cyclic voltammetry experiments showed that mobile lithium ions can be inserted (chemical reduction) and removed (chemical oxidation) from the host structure of indium oxide. Coulometric titrations showed that the films exhibited a hysteresis behavior for the injection and removal of lithium ions in Li{sub x}In{sub 2}O{sub 3} (x=0-0.23). Structural investigations of the indium oxide films, utilizing electron diffraction techniques, indicated that they were crystalline with a crystallite size of 175 {Angstrom}, in agreement with x-ray diffraction results. Differences in optical transmission between the lithiated and delithiated thin films were no more than 5% in the visible/near-infrared regions of the spectrum. 6 refs., 5 figs., 1 tab.

  4. Defect Levels of Indium-doped CdMnTe Crystals

    SciTech Connect

    K Kim; A Bolotinikov; G Camarda; R Gul; A Hossain; G Yang; Y Cui; R James

    2011-12-31

    Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

  5. Work Function Modification of Tungsten-Doped Indium Oxides Deposited by the Co-Sputtering Method.

    PubMed

    Oh, Gyujin; Jeon, Jia; Lee, Kyoung Su; Kim, Eun Kyu

    2016-05-01

    We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt% + WO3 20 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 x 10(19) cm(-3) to 8.58 x 10(21) cm(-3), while the resistivity varied from 3.15 x 10(-4) Ωcm to 2.26 x 10(-3) Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region. PMID:27483882

  6. Diagnostics of surface wave driven low pressure plasmas based on indium monoiodide-argon system

    NASA Astrophysics Data System (ADS)

    Ögün, C. M.; Kaiser, C.; Kling, R.; Heering, W.

    2015-06-01

    Indium monoiodide is proposed as a suitable alternative to hazardous mercury, i.e. the emitting component inside the compact fluorescent lamps (CFL), with comparable luminous efficacy. Indium monoiodide-argon low pressure lamps are electrodelessly driven with surface waves, which are launched and coupled into the lamp by the ‘surfatron’, a microwave coupler optimized for an efficient operation at a frequency of 2.45 GHz. A non intrusive diagnostic method based on spatially resolved optical emission spectroscopy is employed to characterize the plasma parameters. The line emission coefficients of the plasma are derived by means of Abel’s inversion from the measured spectral radiance data. The characteristic plasma parameters, e.g. electron temperature and density are determined by comparing the experimentally obtained line emission coefficients with simulated ones from a collisional-radiative model. Additionally, a method to determine the absolute plasma efficiency via irradiance measurements without any goniometric setup is presented. In this way, the relationship between the plasma efficiency and the plasma parameters can be investigated systematically for different operating configurations, e.g. electrical input power, buffer gas pressure and cold spot temperature. The performance of indium monoiodide-argon plasma is compared with that of conventional CFLs.

  7. Measurement of the indium segregation in InGaN based LEDs with single atom sensitivity

    SciTech Connect

    Jinschek, Joerg; Kisielowski, Christian; Van Dyck, Dirk; Geuens, Philippe

    2003-07-30

    In light emitting diodes (LED) consisting of GaN/InGaN/GaN quantum wells (QWs), the exact indium distribution inside the wells of the active region affects the performance of devices. Indium segregation can take place forming small InGaN clusters of locally varying composition. In the past, we used a local strain analysis from single HRTEM lattice images to determine the In composition inside the InGaN QWs with a resolution of 0.5 nm x 0.3 nm. Truly atomic resolution can be pursued by exploitation of intensity dependencies on the atomic number (Z) of the electron exit-wave (EW). In microscopes with sufficient sensitivity, local variations of amplitude and phase are found to be discrete with sample thickness, which allows for counting the number of atoms in each individual column of {approx}0.08 nm diameter. In QW s of {approx}17 percent of average indium concentration it is possible to discriminate between pure Ga columns and columns containing 1, 2, 3, or more In atoms because phase changes are discrete and element specific. The preparation of samples with atomically flat surfaces is a limiting factor for the application of the procedure.

  8. Adiabatic Calorimetry Approach to Assess Thermal Influences on the Indium Melting Point

    NASA Astrophysics Data System (ADS)

    Failleau, G.; Fleurence, N.; Morice, R.; Gaviot, E.; Rénaot, E.

    2010-09-01

    Within the framework of the Euramet project 732, LCM/LNE-CNAM has recently proposed a new device to investigate the melting point of indium (156.5985 °C) by the way of an adiabatic calorimetry approach. An apparatus based on a cell-within-cell configuration was developed and experimentally tested. First results highlighted parasitic heat flows due to the geometrical characteristics of the cell, disturbing significantly the isothermal condition within the calorimeter. Such thermal effects were also clearly identified with a specific numerical model developed for this purpose. Considering the remarkable agreement between the model and relevant experiments, an optimization step has been carried out to design a suitable cell geometry. A new enhanced cell was subsequently fabricated and arranged within the calorimeter (indium load of 122.32 g). The purpose of this article is to introduce the thermal behavior of such a highly effective apparatus, while presenting some series of measurements; on the one hand, the melting point of indium under adiabatic conditions is studied, and on the other hand, the so-called continuous heat flow method under isothermal conditions is worked out. The obtained results are discussed and analyzed according to the impurity concentrations into the ingot (sum of individual estimate method).

  9. Thermal conductivity of layered borides: The effect of building defects on the thermal conductivity of TmAlB{sub 4} and the anisotropic thermal conductivity of AlB{sub 2}

    SciTech Connect

    Wang, X. J. E-mail: xwang58@illinois.edu; Mori, T. E-mail: xwang58@illinois.edu; Kuzmych-Ianchuk, I.; Michiue, Y.; Yubuta, K.; Shishido, T.; Grin, Y.; Okada, S.; Cahill, D. G.

    2014-04-01

    Rare earth metal borides have attracted great interest due to their unusual properties, such as superconductivity and f-electron magnetism. A recent discovery attributes the tunability of magnetism in rare earth aluminoborides to the effect of so-called “building defects.” In this paper, we report data for the effect of building defects on the thermal conductivities of α-TmAlB{sub 4} single crystals. Building defects reduce the thermal conductivity of α-TmAlB{sub 4} by ≈30%. At room temperature, the thermal conductivity of AlB{sub 2} is nearly a factor of 5 higher than that of α-TmAlB{sub 4}. AlB{sub 2} single crystals are thermally anisotropic with the c-axis thermal conductivity nearly twice the thermal conductivity of the a-b plane. Temperature dependence of the thermal conductivity near and above room temperature reveals that both electrons and phonons contribute substantially to thermal transport in AlB{sub 2} with electrons being the dominant heat carriers.

  10. Enhancement effect of short-circuit currents of Si solar cells with inclusion of indium tin oxide layers on metal-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Ji, Hyung Yong; Parida, Bhaskar; Park, Seungil; Kim, Myeong Jun; Chung, Sang Jo; Kim, Keunjoo

    2015-10-01

    We investigated the enhancement effect on short-circuit currents by indium tin oxide contact layers imbedded in metal-semiconductor interfaces in Si solar cells. Both samples that incorporate the thin film layer and the crossed finger lines of indium tin oxide exhibit an enhancement of p-n junction photocurrents and depletion capacitances with enhanced bulk donor concentrations at the emitter contacts. The indium tin oxide layer provides the passivation layer on the Si emitter surface with reduced trap states and the carrier transport layer for charge collection. The Si solar cells with indium tin oxide showed improved performance in shunt resistance and short-circuit current.

  11. Macrophage solubilization and cytotoxicity of indium-containing particles as in vitro correlates to pulmonary toxicity in vivo.

    PubMed

    Gwinn, William M; Qu, Wei; Bousquet, Ronald W; Price, Herman; Shines, Cassandra J; Taylor, Genie J; Waalkes, Michael P; Morgan, Daniel L

    2015-03-01

    Macrophage-solubilized indium-containing particles (ICPs) were previously shown in vitro to be cytotoxic. In this study, we compared macrophage solubilization and cytotoxicity of indium phosphide (InP) and indium-tin oxide (ITO) with similar particle diameters (∼ 1.5 µm) and then determined if relative differences in these in vitro parameters correlated with pulmonary toxicity in vivo. RAW 264.7 macrophages were treated with InP or ITO particles and cytotoxicity was assayed at 24 h. Ionic indium was measured in 24 h culture supernatants. Macrophage cytotoxicity and particle solubilization in vitro were much greater for InP compared with ITO. To correlate changes in vivo, B6C3F1 mice were treated with InP or ITO by oropharyngeal aspiration. On Days 14 and 28, bronchoalveolar lavage (BAL) and pleural lavage (PL) fluids were collected and assayed for total leukocytes. Cell differentials, lactate dehydrogenase activity, and protein levels were also measured in BAL. All lavage parameters were greatly increased in mice treated with InP compared with ITO. These data suggest that macrophage solubilization and cytotoxicity of some ICPs in vitro are capable of predicting pulmonary toxicity in vivo. In addition, these differences in toxicity were observed despite the two particulate compounds containing similar amounts of indium suggesting that solubilization, not total indium content, better reflects the toxic potential of some ICPs. Soluble InCl3 was shown to be more cytotoxic than InP to macrophages and lung epithelial cells in vitro further suggesting that ionic indium is the primary cytotoxic component of InP.

  12. Preparation and nonlinear optical properties of indium nanocrystals in sodium borosilicate glass by the sol–gel route

    SciTech Connect

    Zhong, Jiasong; Xiang, Weidong; Zhao, Haijun; Chen, Zhaoping; Liang, Xiaojuan; Zhao, Wenguang; Chen, Guoxin

    2012-11-15

    Graphical abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel methods. And the indium nanocrystals in tetragonal crystal system have formed uniformly in the glass, and the average diameter of indium nanocrystals is about 30 nm. The third-order optical nonlinear refractive index γ, absorption coefficient β, and susceptibility χ{sup (3)} of the glass are determined to be −4.77 × 10{sup −16} m{sup 2}/W, 2.67 × 10{sup −9} m/W, and 2.81 × 10{sup −10} esu, respectively. Highlights: ► Indium nanocrystals embedded in glass matrix have been prepared by sol–gel route. ► The crystal structure and composition are investigated by XRD and XPS. ► Size and distribution of indium nanocrystals is determined by TEM. ► The third-order optical nonlinearity is investigated by using Z-scan technique. -- Abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel route. The thermal stability behavior of the stiff gel is investigated by thermogravimetric (TG) and differential thermal (DTA) analysis. The crystal structure of the glass is characterized by X-ray powder diffraction (XRD). Particle composition is determined by X-ray photoelectron spectroscopy (XPS). Size and distribution of the nanocrystals are characterized by transmission electron microscopy (TEM) as well as high-resolution transmission electron microscopy (HRTEM). Results show that the indium nanocrystals in tetragonal crystal structure have formed in glass, and the average diameter is about 30 nm. Further, the glass is measured by Z-scan technique to investigate the nonlinear optical (NLO) properties. The third-order NLO coefficient χ{sup (3)} of the glass is determined to be 2.81 × 10{sup −10} esu. The glass with large third-order NLO coefficient is promising materials for applications in optical devices.

  13. Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles as in vitro Correlates to Pulmonary Toxicity in vivo

    PubMed Central

    Gwinn, William M.; Qu, Wei; Bousquet, Ronald W.; Price, Herman; Shines, Cassandra J.; Taylor, Genie J.; Waalkes, Michael P.; Morgan, Daniel L.

    2015-01-01

    Macrophage-solubilized indium-containing particles (ICPs) were previously shown in vitro to be cytotoxic. In this study, we compared macrophage solubilization and cytotoxicity of indium phosphide (InP) and indium-tin oxide (ITO) with similar particle diameters (∼1.5 µm) and then determined if relative differences in these in vitro parameters correlated with pulmonary toxicity in vivo. RAW 264.7 macrophages were treated with InP or ITO particles and cytotoxicity was assayed at 24 h. Ionic indium was measured in 24 h culture supernatants. Macrophage cytotoxicity and particle solubilization in vitro were much greater for InP compared with ITO. To correlate changes in vivo, B6C3F1 mice were treated with InP or ITO by oropharyngeal aspiration. On Days 14 and 28, bronchoalveolar lavage (BAL) and pleural lavage (PL) fluids were collected and assayed for total leukocytes. Cell differentials, lactate dehydrogenase activity, and protein levels were also measured in BAL. All lavage parameters were greatly increased in mice treated with InP compared with ITO. These data suggest that macrophage solubilization and cytotoxicity of some ICPs in vitro are capable of predicting pulmonary toxicity in vivo. In addition, these differences in toxicity were observed despite the two particulate compounds containing similar amounts of indium suggesting that solubilization, not total indium content, better reflects the toxic potential of some ICPs. Soluble InCl3 was shown to be more cytotoxic than InP to macrophages and lung epithelial cells in vitro further suggesting that ionic indium is the primary cytotoxic component of InP. PMID:25527823

  14. Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

    NASA Technical Reports Server (NTRS)

    Blackburn, L. B.; Starke, E. A., Jr.

    1989-01-01

    Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

  15. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOEpatents

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  16. Optical and X-ray studies of MOCVD-grown InGaN epilayers with low indium concentration

    NASA Astrophysics Data System (ADS)

    Park, Gil; Hwang, Seon-Ju; Shee, Sang-Kee; Sugahara, Tomoya; Lam, Jack; Gainer, Gordon; Song, Jin-Joo; Sakai, S.

    2001-03-01

    Optical and X-ray studies of MOCVD-grown InGaN epilayers with low indium concentration G. H. Park, S. J. Hwang, S. K. Shee, T. Sugahara, J. B. Lam, G. H. Gainer and J. J. Song, Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA; S. Sakai, Electrical and Electronic Department, University of Tokushima, Tokushima, Japan. In_xGa_1-xN epilayers with low indium concentration (x < 5%) were grown by low pressure metalorganic chemical vapor deposition on (0001) sapphire. These samples were characterized by optical techniques and high-resolution X-ray diffraction. Photoluminescence (PL) and stimulated emission (SE) were measured. The PL intensity of the InGaN epilayers is much higher than that of GaN, even for very small indium concentrations. The PL peaks show the S-shaped temperature dependence, and the stimulated emission threshold is also temperature dependent. The PL and SE also vary greatly with indium concentration. These observations indicate that the way indium incorporates into GaN varies with In concentration. The structural characteristics will be discussed in light of their possible relation to the optical characteristics. This work is supported by ONR, BMDO, and AFOSR.

  17. Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body

    NASA Astrophysics Data System (ADS)

    Amano, Takaaki; Koga, Kazunori; Sarinont, Thapanut; Seo, Hyunwoong; Itagaki, Naho; Shiratani, Masaharu; Kitazaki, Satoshi; Hirata, Miyuki; Nakatsu, Yoshimichi; Tanaka, Akiyo

    2015-09-01

    Nanoparticles can be employed for biomedical applications such as biomarkers, drug delivery systems, and cancer therapies. They are, however, pointed out their adverse effects on human body. Here, we synthesed indium-containing nanoparticles using discharge plasmas with indium electrodes immersed in DI water and administrated nanoparticles to rats to analyze their kinetics in living body. The discharge power was 5.1 W. The electron density is 5x1017/cm3 deduced from Stark broadening of hydrogen lines. TEM observation shows the mean size of primary nanoparticles is 7 nm. The nanoparticles are indium crystalline and indium hydroxide crystalline. The synthesized nanoparticles and purchased nanoparticles (In2O3, <100nm) were administrated to rats using subcutaneous injection. Indium of 166.7 g/day (synthesized) and of 27.8 g/day (purchased) are detected from the urine at 12 weeks after the administration. Synthesized nanoparticles dispersed in water are useful for analyzing kinetics of nanoparticles in living body. Work partly supported by KAKENHI.

  18. Application of Mythen detector: In-situ XRD study on the thermal expansion behavior of metal indium

    NASA Astrophysics Data System (ADS)

    Du, Rong; Chen, ZhongJun; Cai, Quan; Fu, JianLong; Gong, Yu; Wu, ZhongHua

    2016-07-01

    A Mythen detector has been equipped at the beamline 4B9A of Beijing Synchrotron Radiation Facility (BSRF), which is expected to enable BSRF to perform time-resolved measurement of X-ray diffraction (XRD) full-profiles. In this paper, the thermal expansion behavior of metal indium has been studied by using the in-situ XRD technique with the Mythen detector. The indium was heated from 303 to 433 K with a heating rate of 2 K/min. The in-situ XRD full-profiles were collected with a rate of one profile per 10 seconds. Rietveld refinement was used to extract the structural parameters. The results demonstrate that these collected quasi-real-time XRD profiles can be well used for structural analysis. The metal indium was found to have a nonlinear thermal expansion behavior from room temperature to the melting point (429.65 K). The a-axis of the tetragonal unit cell expands with a biquadratic dependency on temperature, while the c-axis contracts with a cubic dependency on temperature. By the time-resolved XRD measurements, it was observed that the [200] preferred orientation can maintain to about 403.15 K. While (110) is the last and detectable crystal plane just before melting of the polycrystalline indium foil. This study is not only beneficial to the application of metal indium, but also exhibits the capacity of in-situ time-resolved XRD measurements at the X-ray diffraction station of BSRF.

  19. Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

    NASA Astrophysics Data System (ADS)

    Ghosh, Biswajit; Kumar, Kamlesh; Singh, Balwant Kr; Banerjee, Pushan; Das, Subrata

    2014-11-01

    In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135 nm CdS films were grown onto 20 nm and 35 nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400 °C for 4 min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400 °C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

  20. Effects of O 7+ swift heavy ion irradiation on indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Gokulakrishnan, V.; Parthiban, S.; Elangovan, E.; Ramamurthi, K.; Jeganathan, K.; Kanjilal, D.; Asokan, K.; Martins, R.; Fortunato, E.

    2011-08-01

    Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O 7+ ions with different fluences of 5 × 10 11, 1 × 10 12 and 1 × 10 13 ions/cm 2. X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from ˜78.9 to 43.0 cm 2/V s, following irradiation. Films irradiated with a fluence of 5 × 10 11 ions/cm 2 showed a better combination of electrical properties, with a resistivity of 4.57 × 10 -3 Ω cm, carrier concentration of 2.2 × 10 19 cm -3 and mobility of 61.0 cm 2/V s. The average transmittance obtained from the as-deposited films decreased from ˜81% to 72%, when irradiated with a fluence of 5 × 10 11 ions/cm 2. The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as "radish-like" morphology when irradiated with a fluence of 5 × 10 11 ions/cm 2.

  1. Effect of acetaminophen on the leukocyte-labeling efficiency of indium oxine In 111

    SciTech Connect

    Augustine, S.C.; Schmelter, R.F.; Nelson, K.L.; Petersen, R.J.; Qualfe, M.A.

    1983-11-01

    The effect of acetaminophen on the labeling efficiency of leukocytes with indium oxine In 111 was studied. A blood sample was obtained from eight healthy men before and after they received acetaminophen 650 mg every four hours for 24 hours. After dividing the plasma from each sample into three portions, leukocytes were separated and labeled with indium oxine In 111. In an in vitro study, 200 ml of blood was obtained from one of the men, and the plasma was separated into four portions. Acetaminophen in 95% ethanol was added to three of the plasma fractions to produce acetaminophen concentrations of 4, 20, and 100 micrograms/ml; ethanol was added to the fourth fraction as a control. Each plasma fraction was then subdivided into three aliquots, and leukocytes were labeled as in the in vivo study. Mean leukocyte labeling efficiencies in both studies were calculated from the ratios of leukocyte radioactivity to initial radioactivity in the samples, expressed as percentages. Leukocyte labeling efficiencies before acetaminophen administration ranged from 79 to 85%; after administration, labeling efficiencies ranged from 70 to 87%. No significant differences in mean labeling efficiency before and after acetaminophen administration were noted in any of the subjects. Leukocyte labeling efficiencies in all in vitro plasma fractions were reduced, ranging from 54 to 63%, but no significant differences in labeling efficiency between any of the plasma fractions were found. Using the labeling procedures in this study, exposure of leukocytes from healthy men to acetaminophen in vivo or in vitro does not affect labeling efficiency with indium oxine In 111.

  2. Improved performance of diode-end-pumped Nd:GdVO4 912 nm laser property with indium solder technology

    NASA Astrophysics Data System (ADS)

    Yan, R. P.; Yu, X.; Chen, D. Y.; Chen, F.; Li, X. D.; Ma, Y. F.; Wang, C.; Yu, J. H.

    2011-03-01

    A novel indium-solder technology is demonstrated to deal with the serious thermal dissipation problem in the 912 nm Nd:GdVO4 laser operation. By use of indium-solder between the laser rod and the heat-sink, the contact resistance is reduced by removing the air bubble and heat conducting silicon and the boundary heat transfer coefficient is raised. After the indium-solder was used, it is found that the temperature in the laser rod and the deformation in the pumping end surface are eased remarkably based on a simulation of finite element analysis. Experimental results show that the continuous-wave 912 nm laser performance is improved obviously, both in a plano-plano cavity and a plano-concave cavity.

  3. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

    PubMed

    Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua

    2012-07-01

    High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets. PMID:22772213

  4. Technological process and optimum design of organic materials vacuum pyrolysis and indium chlorinated separation from waste liquid crystal display panels.

    PubMed

    Ma, En; Xu, Zhenming

    2013-12-15

    In this study, a technology process including vacuum pyrolysis and vacuum chlorinated separation was proposed to convert waste liquid crystal display (LCD) panels into useful resources using self-design apparatuses. The suitable pyrolysis temperature and pressure are determined as 300°C and 50 Pa at first. The organic parts of the panels were converted to oil (79.10 wt%) and gas (2.93 wt%). Then the technology of separating indium was optimized by central composite design (CCD) under response surface methodology (RSM). The results indicated the indium recovery ratio was 99.97% when the particle size is less than 0.16 mm, the weight percentage of NH4Cl to glass powder is 50 wt% and temperature is 450°C. The research results show that the organic materials, indium and glass of LCD panel can be recovered during the recovery process efficiently and eco-friendly.

  5. CH4/Ar/H2/SF6 Plasma Etching for Surface Oxide Removal of Indium Bumps

    NASA Astrophysics Data System (ADS)

    Huang, Yue; Lin, Chun; Ye, Zhen-Hua; Liao, Qing-Jun; Ding, Rui-Jun

    2015-07-01

    Plasma etching for surface indium oxide removal by methane/argon/hydrogen/sulfur hexafluoride (CH4/Ar/H2/SF6) mixture has been implemented. The morphology of the indium bumps was not deteriorated after the plasma etching. High-resolution O 1 s x-ray photoelectron spectroscopy (XPS) proved that the In-O component decreased from 44.5% for the nonetched sample to 10.8% for the sample after plasma etching. The surface modification of the indium bumps might be in the form of doped fluorine according to the XPS results. The zero-bias resistance derived from current-voltage ( I- V) measurements for plasma-etched infrared detectors was comparable to that for nonetched ones, indicating that such plasma treatment is suitable for processing sensitive materials such as mercury cadmium telluride.

  6. Humidity Sensing Using Gelatin and Cobalt Chloride Coating on Indium Tin Oxide-Coated Long-Period Grating

    NASA Astrophysics Data System (ADS)

    Nidhi; Kaler, R. S.; Kapur, Pawan

    2014-01-01

    In this article, humidity sensing using gelatin and cobalt chloride on indium tin oxide coated long-period gratings was proposed and demonstrated. First, a thin overlay of indium tin oxide was deposited on a long-period grating by using a simple dip coating methodology. Similarly, a combination of gelatin and cobalt chloride was deposited onto the indium tin oxide layer. A field emission scanning electron microscope provided detailed evidence of the attachment of amalgamation on long-period gratings. The designed sensor showed a significant shift in the resonance wavelength when the relative humidity varied from 40% to 95%, with a sensitivity of 0.12 nm/% relative humidity and an accuracy of 98.45%.

  7. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target.

    PubMed

    Shen, Kun-Ching; Wang, Tzu-Yu; Wuu, Dong-Sing; Horng, Ray-Hua

    2012-07-01

    High indium compositions InGaN films were grown on sapphires using low temperature pulse laser deposition (PLD) with a dual-compositing target. This target was used to overcome the obstacle in the InGaN growth by PLD due to the difficulty of target preparation, and provided a co-deposition reaction, where InGaN grains generated from the indium and GaN vapors deposit on sapphire surface and then act as nucleation seeds to promote further InGaN growth. The effects of co-deposition on growth mechanisms, surface morphology, and electrical properties of films were thoroughly investigated and the results clearly show promise for the development of high indium InGaN films using PLD technique with dual-compositing targets.

  8. Tin-polyimide and indium-polyimide thin-film composites as soft X-ray bandpass filters

    NASA Technical Reports Server (NTRS)

    Powell, Stephen F.; Allen, Maxwell J.; Willis, Thomas D.

    1993-01-01

    A tin-polyimide and an indium-polyimide soft X-ray bandpass filter were fabricated with thicknesses of 1400 and 1750 A for the metal and polyimide components, respectively. The transmission of each filter was measured at the Stanford Synchrotron Radiation Laboratory. The transmission of the tin-polyimide filter was found to be about 40 percent for radiation with wavelengths between 60 and 80 A. The transmission of the indium-polyimide filter was greater than 40 percent between 70 and 90 A. The indium was about 5 percent more transmissive than the tin and attained a maximum transmission of about 48 percent at 76 A. Such filters have potential applications to soft X-ray telescopes that operate in this region. They might also be of interest to investigators who work with X-ray microscopes that image live biological specimens in the 23-44-A water window.

  9. Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices.

    PubMed

    O'Dwyer, C; Szachowicz, M; Visimberga, G; Lavayen, V; Newcomb, S B; Torres, C M Sotomayor

    2009-04-01

    Thin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices. PMID:19350034

  10. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  11. Liquid crystal terahertz phase shifters with functional indium-tin-oxide nanostructures for biasing and alignment

    SciTech Connect

    Yang, Chan-Shan; Tang, Tsung-Ta; Pan, Ru-Pin; Yu, Peichen; Pan, Ci-Ling

    2014-04-07

    Indium Tin Oxide (ITO) nanowhiskers (NWhs) obliquely evaporated by electron-beam glancing-angle deposition can serve simultaneously as transparent electrodes and alignment layer for liquid crystal (LC) devices in the terahertz (THz) frequency range. To demonstrate, we constructed a THz LC phase shifter with ITO NWhs. Phase shift exceeding π/2 at 1.0 THz was achieved in a ∼517 μm-thick cell. The phase shifter exhibits high transmittance (∼78%). The driving voltage required for quarter-wave operation is as low as 5.66 V (rms), compatible with complementary metal-oxide-semiconductor (CMOS) and thin-film transistor (TFT) technologies.

  12. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    SciTech Connect

    Guo, Li Qiang Ding, Jian Ning; Huang, Yu Kai; Zhu, Li Qiang

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  13. Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates

    NASA Astrophysics Data System (ADS)

    Alfimova, D. L.; Lunin, L. S.; Lunina, M. L.; Pashchenko, A. S.; Chebotarev, S. N.

    2016-09-01

    The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga-In-P-Sb-As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga z In1- z P x SbyAs1- x- y /InAs isoperiodic heterostructures have been investigated.

  14. Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

    NASA Astrophysics Data System (ADS)

    Wu, Guodong; Wan, Changjin; Zhou, Jumei; Zhu, Liqiang; Wan, Qing

    2014-03-01

    Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics.

  15. Real-time x-ray studies of indium island growth kinetics

    SciTech Connect

    Demasi, Alexander; Rainville, Meliha G.; Ludwig, Karl F.

    2015-03-15

    The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations.

  16. Highly efficient inverted organic solar cells using amino acid modified indium tin oxide as cathode

    SciTech Connect

    Li, Aiyuan; Nie, Riming; Deng, Xianyu; Wei, Huaixin; Li, Yanqing; Tang, Jianxin; Zheng, Shizhao; Wong, King-Young

    2014-03-24

    In this paper, we report that highly efficient inverted organic solar cells were achieved by modifying the surface of indium tin oxide (ITO) using an amino acid, Serine (Ser). With the modification of the ITO surface, device efficiency was significantly enhanced from 0.63% to 4.17%, accompanied with an open circuit voltage (Voc) that was enhanced from 0.30 V to 0.55 V. Ultraviolet and X-ray photoelectron spectroscopy studies indicate that the work function reduction induced by the amino acid modification resulting in the decreased barrier height at the ITO/organic interface played a crucial role in the enhanced performances.

  17. Formation of High-Purity Indium Oxide Nanoparticles and Their Application to Sensitive Detection of Ammonia.

    PubMed

    Bhardwaj, Sanjeev K; Bhardwaj, Neha; Kukkar, Manil; Sharma, Amit L; Kim, Ki-Hyun; Deep, Akash

    2015-01-01

    High-purity In₂O₃ nanoparticles were recovered from scrap indium tin oxide substrates in a stepwise process involving acidic leaching, liquid-liquid extraction with a phosphine oxide extractant, and combustion of the organic phase. The morphological and structural parameters of the recovered nanoparticles were investigated to support the formation of the desired products. These In₂O₃ nanoparticles were used for sensitive sensing of ammonia gas using a four-probe electrode device. The proposed sensor offered very quick response time (around 10 s) and highly sensitive detection of ammonia (at a detection limit of 1 ppm).

  18. Highly flexible, hybrid-structured indium tin oxides for transparent electrodes on polymer substrates

    SciTech Connect

    Triambulo, Ross E.; Kim, Jung-Hoon; Park, Jin-Woo; Na, Min-Young; Chang, Hye-Jung

    2013-06-17

    We developed highly flexible, hybrid-structured crystalline indium tin oxide (ITO) for use as transparent electrodes on polymer substrates by embedding Ag nanoparticles (AgNPs) into the substrate. The hybrid ITO consists of domains in one orientation grown on the AgNPs and a matrix of the other orientation. The domains are stronger than the matrix and function as barriers to crack propagation. As a result, both the critical bending radius (r{sub c}) (under which the resistivity change ({Delta}{rho}) is less than a given value) and the change in {Delta}{rho} with decreasing r significantly decreased in the hybrid ITO compared with homogenous ITO.

  19. Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.

    PubMed

    Hong, Chan-Hwa; Shin, Jae-Heon; Ju, Byeong-Kwon; Kim, Kyung-Hyun; Park, Nae-Man; Kim, Bo-Sul; Cheong, Woo-Seok

    2013-11-01

    Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a deltaR of less than 1% were achieved, along with a low sheet resistance of 90 omega/square. PMID:24245328

  20. UV Light and Gas Sensing Properties of Hybrid Sensor Based on Indium-Tin-Oxide Nanocrystals.

    PubMed

    Koo, J E; Lee, S T; Chang, J H

    2015-01-01

    We proposed a hybrid sensor which is able to detect both UV light and gas species. The sensor was fabricated by screen printing using indium-tin-oxide (ITO) nanocrystals. To improve the UV sensitivity, high temperature annealing (600 degrees C) under an external pressure (0.2 MPa) was applied. We could observe room temperature operation of the sensor under the simultaneous stimulation of UV light and CH4 gas. This is indicating that an improved fire warning is possible by using the proposed hybrid sensor. PMID:26328423