40 CFR 421.190 - Applicability: Description of the secondary indium subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE... subcategory. The provisions of this subpart are applicable to discharges resulting from the production of indium at secondary indium facilities processing spent electrolyte solutions and scrap indium metal raw...

The precipitation of indium at elevated pH in a stream influenced by acid mine drainage

USGS Publications Warehouse

White, Sarah Jane O.; Hussain, Fatima A.; Hemond, Harold F.; Sacco, Sarah A.; Shine, James P.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.

2017-01-01

Indium is an increasingly important metal in semiconductors and electronics and has uses in important energy technologies such as photovoltaic cells and light-emitting diodes (LEDs). One significant flux of indium to the environment is from lead, zinc, copper, and tin mining and smelting, but little is known about its aqueous behavior after it is mobilized. In this study, we use Mineral Creek, a headwater stream in southwestern Colorado severely affected by heavy metal contamination as a result of acid mine drainage, as a natural laboratory to study the aqueous behavior of indium. At the existing pH of ~ 3, indium concentrations are 6–29 μg/L (10,000 × those found in natural rivers), and are completely filterable through a 0.45 μm filter. During a pH modification experiment, the pH of the system was raised to > 8, and > 99% of the indium became associated with the suspended solid phase (i.e. does not pass through a 0.45 μm filter). To determine the mechanism of removal of indium from the filterable and likely primarily dissolved phase, we conducted laboratory experiments to determine an upper bound for a sorption constant to iron oxides, and used this, along with other published thermodynamic constants, to model the partitioning of indium in Mineral Creek. Modeling results suggest that the removal of indium from the filterable phase is consistent with precipitation of indium hydroxide from a dissolved phase. This work demonstrates that nonferrous mining processes can be a significant source of indium to the environment, and provides critical information about the aqueous behavior of indium.

Research on the effect of alkali roasting of copper dross on leaching rate of indium

NASA Astrophysics Data System (ADS)

Dafang, Liu; Fan, Xingxiang; Shi, Yifeng; Yang, Kunbin

2017-11-01

The byproduct copper dross produced during refining crude lead was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectrometer (XRF), which showed that copper dross mainly contained lead, copper, zinc, arsenic, antimony, bismuth, sulfur and a small amount of indium and silver etc. The mineralogical phase change of oxidation roasting of copper dross by adding sodium hydroxide was analyzed with the help of XRD and SEM. The effects of water leaching, ratio of sodium hydroxide, roasting time, and roasting temperature on leaching rate of indium were investigated mainly. The experimental results showed that phase of lead metal and sulfides of lead, copper and zinc disappeared after oxidation roasting of copper dross by adding sodium hydroxide, new phase of oxides of lead, copper, zinc and sodium salt of arsenic and antimony appeared. Water leaching could remove arsenic, and acid leaching residue obtained was then leached with acid. The leaching rate of indium was higher 6.98% compared with alkali roasting of copper dross-acid leaching. It showed that removing arsenic by water leaching and acid leaching could increase the leaching rate of indium and be beneficial to reducing subsequent acid consumption of extracting indium by acid leaching. The roasting temperature had a significant effect on the leaching rate of indium, and leaching rate of indium increased with the rise of roasting temperature. When roasting temperature ranged from 450°C to 600°C, leaching rate of indium increased significantly with the rise of roasting temperature. When roasting temperature rose from 450°C to 600°C, leaching rate of indium increased by 60.29%. The amount of sodium hydroxide had an significant effect on the leaching rate of indium, and the leaching of indium increased with the increase of the amount of sodium hydroxide, and the leaching rate of indium was obviously higher than that of copper dross blank roasting and acid leaching.

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE PAGES

Zhong, Ruidan; Schneeloch, John; Li, Qiang; ...

2017-02-16

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Ruidan; Schneeloch, John; Li, Qiang

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Exposure Potential and Health Impacts of Indium and Gallium, Metals Critical to Emerging Electronics and Energy Technologies.

PubMed

White, Sarah Jane O; Shine, James P

2016-12-01

The rapid growth of new electronics and energy technologies requires the use of rare elements of the periodic table. For many of these elements, little is known about their environmental behavior or human health impacts. This is true for indium and gallium, two technology critical elements. Increased environmental concentrations of both indium and gallium create the potential for increased environmental exposure, though little is known about the extent of this exposure. Evidence is mounting that indium and gallium can have substantial toxicity, including in occupational settings where indium lung disease has been recognized as a potentially fatal disease caused by the inhalation of indium particles. This paper aims to review the basic chemistry, changing environmental concentrations, potential for human exposure, and known health effects of indium and gallium.

Optoelectronic properties and interfacial durability of CNT and ITO on boro-silicate glass and PET substrates with nano- and heterostructural aspects

NASA Astrophysics Data System (ADS)

Park, Joung-Man; Wang, Zuo-Jia; Kwon, Dong-Jun; DeVries, Lawrence

2011-02-01

Nano- and hetero-structures of carbon nanotube (CNT) and indium tin oxide (ITO) can control significantly piezoelectric and optoelectronic properties in Microelectromechanical Systems (MEMS) as sensing and actuator under cyclic loading. Optimized preparing conditions were obtained for multi-functional purpose of the specimen by obtaining the best dispersion and turbidity in the solution. Optical transmittance and electrical properties were investigated for CNT and ITO dipping and spraying coating on boro-silicate glass and polyethylene terephthalate (PET) substrates by electrical resistance measurement under cyclic loading and wettability test. Uniform dip-coating was performed using Wilhelmy plate method due to its simple and convenience. Spraying coating was applied to the specimen additionally. The change in the electrical resistance and optical properties of coated layer were mainly dependent upon the number of dip-coating, the concentration of CNT and ITO solutions, and the surface treatment condition. Electric properties of coating layers were measured using four-point probe method, and surface resistance was calculated using a dual configuration method. Optical transmittance of CNT and ITO coated PET film was also evaluated using UV spectrum. Surface energy and their hydrophilic and hydrophobic properties of CNT and ITO coated substrates were investigated by wettability test via static and dynamic contact angle measurements. As the elapsing time of cyclic loading passed, the stability of surface resistance and thus comparative interfacial adhesion between coated layer and substrates was evaluated to compare the thermodynamic work of adhesion, Wa. As dip-coating number increased, surface resistance of coated CNT decreased, whereas the transmittance decreased step-by-step due to the thicker CNT and ITO networked layer. Nano- and heterostructural effects of CNT and ITO solution on the optical and electrical effects have been studied continuously.

Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

NASA Astrophysics Data System (ADS)

Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

2016-08-01

Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

Indium oxide based fiber optic SPR sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, Sarika; Sharma, Navneet K., E-mail: navneetk.sharma@jiit.ac.in

2016-05-06

Surface plasmon resonance based fiber optic sensor using indium oxide layer is presented and theoretically studied. It has been found that with increase in thickness of indium oxide layer beyond 170 nm, the sensitivity of SPR sensor decreases. 170 nm thick indium oxide layer based SPR sensor holds maximum sensitivity.

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

40 CFR 721.10391 - Copper gallium indium selenide.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Copper gallium indium selenide. 721... Substances § 721.10391 Copper gallium indium selenide. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as copper gallium indium selenide (PMN P-10...

Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys

DTIC Science & Technology

2010-03-01

OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS...Government. AFIT/GAP/ENP/10-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS THESIS Presented to...ELECTRICAL CHARACTERIZATION OF BULK GROWN INDIUM- GALLIUM -ARSENIDE ALLOYS Austin C Bergstrom, BS 2 nd Lieutenant, USAF

Early Changes in Clinical, Functional, and Laboratory Biomarkers in Workers at Risk of Indium Lung Disease

PubMed Central

Virji, M. Abbas; Trapnell, Bruce C.; Carey, Brenna; Healey, Terrance; Kreiss, Kathleen

2014-01-01

Rationale: Occupational exposure to indium compounds, including indium–tin oxide, can result in potentially fatal indium lung disease. However, the early effects of exposure on the lungs are not well understood. Objectives: To determine the relationship between short-term occupational exposures to indium compounds and the development of early lung abnormalities. Methods: Among indium–tin oxide production and reclamation facility workers, we measured plasma indium, respiratory symptoms, pulmonary function, chest computed tomography, and serum biomarkers of lung disease. Relationships between plasma indium concentration and health outcome variables were evaluated using restricted cubic spline and linear regression models. Measurements and Main Results: Eighty-seven (93%) of 94 indium–tin oxide facility workers (median tenure, 2 yr; median plasma indium, 1.0 μg/l) participated in the study. Spirometric abnormalities were not increased compared with the general population, and few subjects had radiographic evidence of alveolar proteinosis (n = 0), fibrosis (n = 2), or emphysema (n = 4). However, in internal comparisons, participants with plasma indium concentrations ≥ 1.0 μg/l had more dyspnea, lower mean FEV1 and FVC, and higher median serum Krebs von den Lungen-6 and surfactant protein-D levels. Spline regression demonstrated nonlinear exposure response, with significant differences occurring at plasma indium concentrations as low as 1.0 μg/l compared with the reference. Associations between health outcomes and the natural log of plasma indium concentration were evident in linear regression models. Associations were not explained by age, smoking status, facility tenure, or prior occupational exposures. Conclusions: In indium–tin oxide facility workers with short-term, low-level exposure, plasma indium concentrations lower than previously reported were associated with lung symptoms, decreased spirometric parameters, and increased serum biomarkers of lung disease. PMID:25295756

The Availability of Indium: The Present, Medium Term, and Long Term

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lokanc, Martin; Eggert, Roderick; Redlinger, Michael

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

10 CFR Appendix C to Part 20 - Quantities 1 of Licensed Material Requiring Labeling

Code of Federal Regulations, 2012 CFR

2012-01-01

... Indium-115 100 Indium-116m 1,000 Indium-117m 1,000 Indium-117 1,000 Indium-119m 1,000 Tin-110 100 Tin-111 1,000 Tin-113 100 Tin-117m 100 Tin-119m 100 Tin-121m 100 Tin-121 1,000 Tin-123m 1,000 Tin-123 10 Tin-125 10 Tin-126 10 Tin-127 1,000 Tin-128 1,000 Antimony-115 1,000 Antimony-116m 1,000 Antimony-116 1...

POLAROGRAPHIC BEHAVIOUR OF INDIUM IN THE PRESENCE OF TRIHYDROXYGLUTARIC ACID (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinogradova, E.N.; An, C.

1961-09-01

The polarographic behavtor ot indium in the presence of trihydroxyglutaric acid in acid, nautral, and alkalino media was studied. The vaIue of the half-wave potental of a simple indium ion was determined in HClO/sub 4/ by the half-peak: potential during the anodic dissolutaon of and indium from an amalgam. The half-wave potential is eqia; tp 0.488 v. The effect of the concentration of trihydroxyglutaric acido on the E/sub 1/2/ of indium was studied. It was found that the regular shift of E/sub 1/2/ on changing the concentration of trihydroxyglutaric acid is observed only at pH 4 and pH ll. Themore » coordination number p = 2 and the unstability constant for the indium-trihydroxyglutaric aeid eonnplex at pH 4 were found. K (mean) is (9.73 plus or minus 0.82) x 10/sup - 11/. It was established that the process of indium reduction at pH 11 is irreversible. A method was suggested for the polarographic determination of indium and cadmium, when present together, in trihydroxyglutaric acid at pH 3 and pH 9. (auth)« less

1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current

DTIC Science & Technology

2010-02-02

pf a- IGZO TFTs. IV. RF Characteristics of Room Temperature Deposited Indium Zinc Oxide Thin - Film Transistors Depletion-mode indium zinc...III. High Performance Indium Gallium Zinc Oxide Thin Film Transistors Fabricated On Polyethylene Terephthalate Substrates High-performance...amorphous (a-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate (PET) substrates coated with indium

The mobility of indium and gallium in groundwater systems: constraining the role of sorption in sand column experiments

NASA Astrophysics Data System (ADS)

Dror, I.; Ringering, K.; Yecheskel, Y.; Berkowitz, B.

2017-12-01

The mobility of indium and gallium in groundwater environments was studied via laboratory experiments using quartz sand as a porous medium. Indium and gallium are metals of very low abundance in the Earth's crust and, correspondingly, the biosphere is only adapted to very small concentrations of these elements. However, in modern semiconductor industries, both elements play a central role and are incorporated in devices of mass production such as smartphones and digital cameras. The resulting considerable increase in production, use and discharge of indium and gallium throughout the last two decades, with a continuous and fast increase in the near future, raises questions regarding the fate of both elements in the environment. However, the transport behavior of these two metals in soils and groundwater systems remains poorly understood to date. Because of the low solubility of both elements in aqueous solutions, trisodium citrate was used as a complexation agent to stabilize the solutions, enabling investigation of the transport of these metals at neutral pH. Column experiments showed different binding capacities for indium and gallium, where gallium is much more mobile compared to indium and both metals are substantially retarded in the column. Different affinities were also confirmed by examining sorption isotherms of indium and gallium in equilibrium batch systems. The effect of natural organic matter on the mobility of indium and gallium was also studied, by addition of humic acid. For both metals, the presence of humic acid affects the sorption dynamics: for indium, sorption is strongly inhibited leading to much higher mobility, whereas gallium showed a slightly higher sorption affinity and very similar mobility compared to the same setup without humic acid addition. However, in all cases, the binding capacity of gallium to quartz is much weaker than that of indium. These results are consistent with the assumption that indium and gallium form different types of complexes with organic ligands. It was further observed that the complexes of gallium appear to be more stable than those of indium.

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Effects of a powered air-purifying respirator intervention on indium exposure reduction and indium related biomarkers among ITO sputter target manufacturing workers.

PubMed

Liu, Hung-Hsin; Chen, Chang-Yuh; Lan, Cheng-Hang; Chang, Cheng-Ping; Peng, Chiung-Yu

2016-01-01

This study aimed to evaluate the efficacy of powered air-purifying respirators (PAPRs) worn by the workers, and to investigate the effect of this application on exposure and preclinical effects in terms of workplace measuring and biomarker monitoring in ITO sputter target manufacturing plants and workers, respectively. Fifty-four workers were recruited and investigated from 2010-2012, during which PAPRs were provided to on-site workers in September 2011. Each worker completed questionnaires and provided blood and urine samples for analysis of biomarkers of indium exposure and preclinical effects. Area and personal indium air samples were randomly collected from selected worksites and from participants. The penetration percentage of the respirator (concentration inside respirator divided by concentration outside respirator) was 6.6%. Some biomarkers, such as S-In, SOD, GPx, GST, MDA, and TMOM, reflected the decrease in exposure and showed lower levels, after implementation of PAPRs. This study is the first to investigate the efficacy of PAPRs for reducing indium exposure. The measurement results clearly showed that the implementation of PAPRs reduces levels of indium-related biomarkers. These findings have practical applications for minimizing occupational exposure to indium and for managing the health of workers exposed to indium.

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazioti, C.; Kehagias, Th.; Pavlidou, E.

2015-10-21

We investigate the structural properties of a series of high alloy content InGaN epilayers grown by plasma-assisted molecular beam epitaxy, employing the deposition temperature as variable under invariant element fluxes. Using transmission electron microscopy methods, distinct strain relaxation modes were observed, depending on the indium content attained through temperature adjustment. At lower indium contents, strain relaxation by V-pit formation dominated, with concurrent formation of an indium-rich interfacial zone. With increasing indium content, this mechanism was gradually substituted by the introduction of a self-formed strained interfacial InGaN layer of lower indium content, as well as multiple intrinsic basal stacking faults andmore » threading dislocations in the rest of the film. We show that this interfacial layer is not chemically abrupt and that major plastic strain relaxation through defect introduction commences upon reaching a critical indium concentration as a result of compositional pulling. Upon further increase of the indium content, this relaxation mode was again gradually succeeded by the increase in the density of misfit dislocations at the InGaN/GaN interface, leading eventually to the suppression of the strained InGaN layer and basal stacking faults.« less

Looking Down Under for a Circular Economy of Indium.

PubMed

Werner, Tim T; Ciacci, Luca; Mudd, Gavin Mark; Reck, Barbara K; Northey, Stephen Alan

2018-02-20

Indium is a specialty metal crucial for modern technology, yet it is potentially critical due to its byproduct status in mining. Measures to reduce its criticality typically focus on improving its recycling efficiency at end-of-life. This study quantifies primary and secondary indium resources ("stocks") for Australia through a dynamic material-flow analysis. It is based on detailed assessments of indium mineral resources hosted in lead-zinc and copper deposits, respective mining activities from 1844 to 2013, and the trade of indium-containing products from 1988 to 2015. The results show that Australia's indium stocks are substantial, estimated at 46.2 kt in mineral resources and an additional 14.7 kt in mine wastes. Australian mineral resources alone could meet global demand (∼0.8 kt/year) for more than five decades. Discarded material from post-consumer products, instead, is negligible (43 t). This suggests that the resilience of Australia's indium supply can best be increased through efficiency gains in mining (such as introducing domestic indium refining capacity) rather than at the end of the product life. These findings likely also apply to other specialty metals, such as gallium or germanium, and other resource-dominated countries. Finally, the results illustrate that national circular economy strategies can differ substantially.

InP (Indium Phosphide): Into the future

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

Indium: bringing liquid-crystal displays into focus

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Compared to more abundant industrial metals such as lead and zinc, information about the behavior and toxicity of indium in the environment is limited. However, many indium compounds have been proven to be toxic to animals.

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride

PubMed Central

Biswal, Rajesh; Maldonado, Arturo; Vega-Pérez, Jaime; Acosta, Dwight Roberto; Olvera, María De La Luz

2014-01-01

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10−3 Ω·cm and high optical transmittance, in the visible range, of 50%–70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered. PMID:28788118

Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique, Starting from Zinc Acetylacetonate and Indium Chloride.

PubMed

Biswal, Rajesh; Maldonado, Arturo; Vega-Pérez, Jaime; Acosta, Dwight Roberto; De La Luz Olvera, María

2014-07-04

The physical characteristics of ultrasonically sprayed indium-doped zinc oxide (ZnO:In) thin films, with electrical resistivity as low as 3.42 × 10 -3 Ω·cm and high optical transmittance, in the visible range, of 50%-70% is presented. Zinc acetylacetonate and indium chloride were used as the organometallic zinc precursor and the doping source, respectively, achieving ZnO:In thin films with growth rate in the order of 100 nm/min. The effects of both indium concentration and the substrate temperature on the structural, morphological, optical, and electrical characteristics were measured. All the films were polycrystalline, fitting well with hexagonal wurtzite type ZnO. A switching in preferential growth, from (002) to (101) planes for indium doped samples were observed. The surface morphology of the films showed a change from hexagonal slices to triangle shaped grains as the indium concentration increases. Potential applications as transparent conductive electrodes based on the resulting low electrical resistance and high optical transparency of the studied samples are considered.

Indium oxide/n-silicon heterojunction solar cells

DOEpatents

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Indium adhesion provides quantitative measure of surface cleanliness

NASA Technical Reports Server (NTRS)

Krieger, G. L.; Wilson, G. J.

1968-01-01

Indium tipped probe measures hydrophobic and hydrophilic contaminants on rough and smooth surfaces. The force needed to pull the indium tip, which adheres to a clean surface, away from the surface provides a quantitative measure of cleanliness.

Extraction equilibrium of indium(III) from nitric acid solutions by di(2-ethylhexyl)phosphoric acid dissolved in kerosene.

PubMed

Tsai, Hung-Sheng; Tsai, Teh-Hua

2012-01-04

The extraction equilibrium of indium(III) from a nitric acid solution using di(2-ethylhexyl) phosphoric acid (D2EHPA) as an acidic extractant of organophosphorus compounds dissolved in kerosene was studied. By graphical and numerical analysis, the compositions of indium-D2EHPA complexes in organic phase and stoichiometry of the extraction reaction were examined. Nitric acid solutions with various indium concentrations at 25 °C were used to obtain the equilibrium constant of InR₃ in the organic phase. The experimental results showed that the extraction distribution ratios of indium(III) between the organic phase and the aqueous solution increased when either the pH value of the aqueous solution and/or the concentration of the organic phase extractant increased. Finally, the recovery efficiency of indium(III) in nitric acid was measured.

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath

2015-06-01

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In32-xSnxO48+x/2; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

Method for forming indium oxide/n-silicon heterojunction solar cells

DOEpatents

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Method for enhancing the solubility of boron and indium in silicon

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2002-01-01

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

An investigation on the In doping of ZnO thin films by spray pyrolysis

NASA Astrophysics Data System (ADS)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

NASA Astrophysics Data System (ADS)

Kyle, Erin C. H.; Kaun, Stephen W.; Young, Erin C.; Speck, James S.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5-6 × 1019 cm-3 as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 1018 cm-3. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

Recycling of indium from waste LCD: A promising non-crushing leaching with the aid of ultrasonic wave.

PubMed

Zhang, Kaihua; Li, Bin; Wu, Yufeng; Wang, Wei; Li, Rubing; Zhang, Yi-Nan; Zuo, Tieyong

2017-06-01

The tremendous amount of end-of-life liquid crystal displays (LCDs) has become one of the prominent sources of waste electrical and electronic equipment (WEEE) in recent years. Despite the necessity of safe treatment, recycling indium is also a focus of waste LCD treatment because of the scarcity of indium. Based on the analyses of the structure of Indium Tin Oxide (ITO) glass, crushing is demonstrated to be not required. In the present research, a complete non-crushing leaching method was firstly adopted to recycle indium from waste LCDs, and the ultrasonic waves was applied in the leaching process. The results demonstrated that indium can be leached efficiently with even a low concentration of chloride acid (HCl) without extra heating. About 96.80% can be recovered in 60mins, when the ITO glass was leached by 0.8MHCl with an enhancement of 300W ultrasonic waves. The indium leaching process is abridged free from crushing, and proves to be of higher efficiency. In addition, the ultrasonic wave influence on leaching process was also explained combing with micron-scale structure of ITO glass. Copyright © 2017 Elsevier Ltd. All rights reserved.

Enhanced optical properties due to indium incorporation in zinc oxide nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S.; Mukherjee, S.; Sarkar, K.

Indium-doped zinc oxide nanowires grown by vapor-liquid-solid technique with 1.6 at. % indium content show intense room temperature photoluminescence (PL) that is red shifted to 20 meV from band edge. We report on a combination of nanowires and nanobelts-like structures with enhanced optical properties after indium doping. The near band edge emission shift gives an estimate for the carrier density as high as 5.5 × 10{sup 19 }cm{sup −3} for doped nanowires according to Mott's critical density theory. Quenching of the visible green peak is seen for doped nanostructures indicating lesser oxygen vacancies and improved quality. PL and transmission electron microscopy measurementsmore » confirm indium doping into the ZnO lattice, whereas temperature dependent PL data give an estimation of the donor and acceptor binding energies that agrees well with indium doped nanowires. This provides a non-destructive technique to estimate doping for 1D structures as compared to the traditional FET approach. Furthermore, these indium doped nanowires can be a potential candidate for transparent conducting oxides applications and spintronic devices with controlled growth mechanism.« less

40 CFR 421.195 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Indium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly average mg...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Indium... existing sources. The mass of wastewater pollutants in secondary indium process wastewater introduced into...

40 CFR 421.195 - Pretreatment standards for existing sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Indium Subcategory Pollutant or pollutant property Maximum for any 1 day Maximum for monthly average mg...) EFFLUENT GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Indium... existing sources. The mass of wastewater pollutants in secondary indium process wastewater introduced into...

THE TOXICITY OF INDIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Downs, W.L.; Scott, J.K.; Steadman, L.T.

1959-09-16

Data are presented on the toxic effects of indium, administered as a chloride (InCl/sub 3/) or as an oxide (In/sub 2/O/sub 3/), in rats, rabbits, and dcgs. Data are included on the tissue distribution and excretion of indium-114. (C.H.)

Low-temperature mechanical dissipation of thermally evaporated indium film for use in interferometric gravitational wave detectors

NASA Astrophysics Data System (ADS)

Murray, Peter G.; Martin, Iain W.; Cunningham, Liam; Craig, Kieran; Hammond, Giles D.; Hofmann, Gerd; Hough, James; Nawrodt, Ronny; Reifert, David; Rowan, Sheila

2015-06-01

Indium bonding is under consideration for use in the construction of cryogenic mirror suspensions in future gravitational wave detectors. This paper presents measurements of the mechanical loss of a thermally evaporated indium film over a broad range of frequencies and temperatures. It provides an estimate of the resulting thermal noise at 20 K for a typical test mass geometry for a cryogenic interferometric gravitational wave detector from an indium layer between suspension elements.

Indium Single-Ion Frequency Standard

NASA Technical Reports Server (NTRS)

Nagourney, Warren

2001-01-01

A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles In Vitro

PubMed Central

Morgan, Daniel L.

2013-01-01

Indium-containing particles (ICPs) are used extensively in the microelectronics industry. Pulmonary toxicity is observed after inhalation exposure to ICPs; however, the mechanism(s) of pathogenesis is unclear. ICPs are insoluble at physiological pH and are initially engulfed by alveolar macrophages (and likely airway epithelial cells). We hypothesized that uptake of ICPs by macrophages followed by phagolysosomal acidification results in the solubilization of ICPs into cytotoxic indium ions. To address this, we characterized the in vitro cytotoxicity of indium phosphide (InP) or indium tin oxide (ITO) particles with macrophages (RAW cells) and lung-derived epithelial (LA-4) cells at 24h using metabolic (3-(4,5-dimethylthiazolyl-2)-2,5-diphenyltetrazolium bromide) and membrane integrity (lactate dehydrogenase) assays. InP and ITO were readily phagocytosed by RAW and LA-4 cells; however, the particles were much more cytotoxic to RAW cells and cytotoxicity was dose dependent. Treatment of RAW cells with cytochalasin D (CytoD) blocked particle phagocytosis and reduced cytotoxicity. Treatment of RAW cells with bafilomycin A1, a specific inhibitor of phagolysosomal acidification, also reduced cytotoxicity but did not block particle uptake. Based on direct indium measurements, the concentration of ionic indium was increased in culture medium from RAW but not LA-4 cells following 24-h treatment with particles. Ionic indium derived from RAW cells was significantly reduced by treatment with CytoD. These data implicate macrophage uptake and solubilization of InP and ITO via phagolysosomal acidification as requisite for particle-induced cytotoxicity and the release of indium ions. This may apply to other ICPs and strongly supports the notion that ICPs require solubilization in order to be toxic. PMID:23872580

Method of manufacturing tin-doped indium oxide nanofibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Soydan; Naskar, Amit K

2017-06-06

A method of making indium tin oxide nanofibers includes the step of mixing indium and tin precursor compounds with a binder polymer to form a nanofiber precursor composition. The nanofiber precursor composition is co-formed with a supporting polymer to form a composite nanofiber having a precursor composition nanofiber completely surrounded by the supporting polymer composition. The supporting polymer composition is removed from the composite nanofiber to expose the precursor composition nanofiber. The precursor composition nanofiber is then heated in the presence of oxygen such as O.sub.2 to form indium tin oxide and to remove the binder polymer to form anmore » indium tin oxide nanofiber. A method of making metal oxide nanofibers is also disclosed.« less

Evaluation of hydrogen radical treatment for indium surface oxide removal and analysis of re-oxidation behavior

NASA Astrophysics Data System (ADS)

Furuyama, Kohta; Yamanaka, Kazuyuki; Higurashi, Eiji; Suga, Tadatomo

2018-02-01

Indium is a commonly used metal for sealing, bonding, and soldering due to its good malleability and ductility even at cryogenic temperatures. The effects of hydrogen radical treatment on indium surface oxide removal were evaluated by the spreading ratio test of indium balls (diameter, 300 µm purity, 99.99%). It was found that hydrogen radical treatment longer than 20 s at temperatures higher than 170 °C results in successful surface oxide removal. X-ray photoelectron spectroscopy analysis was carried out to study the re-oxidation behavior after treatment, and it was found that hydrogen radical treatment slows down the re-oxidation of indium compared with surface oxide removal realized by physical bombardment with an argon fast atom beam.

40 CFR 421.196 - Pretreatment standards for new sources.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Electrolyte. PSNS for the Secondary Indium Subcategory Pollutant or pollutant property Maximum for any 1 day... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory... wastewater pollutants in secondary indium process wastewater introduced into a POTW should not exceed the...

40 CFR 421.196 - Pretreatment standards for new sources.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Electrolyte. PSNS for the Secondary Indium Subcategory Pollutant or pollutant property Maximum for any 1 day... GUIDELINES AND STANDARDS NONFERROUS METALS MANUFACTURING POINT SOURCE CATEGORY Secondary Indium Subcategory... wastewater pollutants in secondary indium process wastewater introduced into a POTW should not exceed the...

On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Glukhovskoi, E. G.; Khazanov, A. A.

2016-06-15

The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonidemore » and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.« less

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, Madhvendra Nath, E-mail: ommadhav27@gmail.com

2015-06-24

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom ofmore » conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.« less

On the impact of indium distribution on the electronic properties in InGaN nanodisks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benaissa, M., E-mail: benaissa.um5@gmail.com, E-mail: benaissa@fsr.ac.ma; Sigle, W.; Aken, P. A. van

2015-03-09

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations—plasmons—at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening.more » In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.« less

Synthesis and decomposition of a novel carboxylate precursor to indium oxide

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Andras, Maria T.; Duraj, Stan A.; Clark, Eric B.; Hehemann, David G.; Scheiman, Daniel A.; Fanwick, Phillip E.

1994-01-01

Reaction of metallic indium with benzoyl peroxide in 4-1 methylpyridine (4-Mepy) at 25 C produces an eight-coordinate mononuclear indium(III) benzoate, In(eta(sup 2)-O2CC6H5)3(4-Mepy)2 4H2O (I), in yields of up to 60 percent. The indium(III) benzoate was fully characterized by elemental analysis, spectroscopy, and X-ray crystallography; (I) exists in the crystalline state as discrete eight-coordinate molecules; the coordination sphere around the central indium atom is best described as pseudo-square pyramidal. Thermogravimetric analysis of (I) and X-ray diffraction powder studies on the resulting pyrolysate demonstrate that this new benzoate is an inorganic precursor to indium oxide. Decomposition of (I) occurs first by loss of 4-methylpyridine ligands (100 deg-200 deg C), then loss of benzoates with formation of In2O3 at 450 C. We discuss both use of carboxylates as precursors and our approach to their preparation.

Synthesis of indium-containing nanoparticles using plasmas in water to study their effects on living body

NASA Astrophysics Data System (ADS)

Amano, Takaaki; Koga, Kazunori; Sarinont, Thapanut; Seo, Hyunwoong; Itagaki, Naho; Shiratani, Masaharu; Kitazaki, Satoshi; Hirata, Miyuki; Nakatsu, Yoshimichi; Tanaka, Akiyo

2015-09-01

Nanoparticles can be employed for biomedical applications such as biomarkers, drug delivery systems, and cancer therapies. They are, however, pointed out their adverse effects on human body. Here, we synthesed indium-containing nanoparticles using discharge plasmas with indium electrodes immersed in DI water and administrated nanoparticles to rats to analyze their kinetics in living body. The discharge power was 5.1 W. The electron density is 5x1017/cm3 deduced from Stark broadening of hydrogen lines. TEM observation shows the mean size of primary nanoparticles is 7 nm. The nanoparticles are indium crystalline and indium hydroxide crystalline. The synthesized nanoparticles and purchased nanoparticles (In2O3, <100nm) were administrated to rats using subcutaneous injection. Indium of 166.7 g/day (synthesized) and of 27.8 g/day (purchased) are detected from the urine at 12 weeks after the administration. Synthesized nanoparticles dispersed in water are useful for analyzing kinetics of nanoparticles in living body. Work partly supported by KAKENHI.

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

PubMed

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Mineral of the month: indium

USGS Publications Warehouse

George, Micheal W.

2004-01-01

Indium was discovered in Germany in 1863. Although it is a lustrous silver-white color, the finders named the new material for the “indigo” spectral lines the mineral created on the spectrograph. Indium ranks 61st in abundance in Earth’s crust and is about three times more abundant than silver or mercury.

[Mechanism of renal elimination of 2 elements of group IIIA of the periodic table : aluminum and indium].

PubMed

Galle, P

1981-01-05

Aluminium and indium, two elements of group IIIA of the periodic table, are concentrated by the kidney inside lysosomes of proximal tubule cell. In these lysosomes, aluminium and indium are precipitated as non-soluble phosphate salts and these precipitates are then expelled in the tubular lumen and eliminated with the urinary flow. These data have been visualized by analytical microscopy (ion microscopy and X ray microanalysis). Local acid phosphatases are assumed to permit the concentration of aluminium and indium salts inside the lysosomes.

Reflectance of metallic indium for solar energy applications

NASA Technical Reports Server (NTRS)

Bouquet, F. L.; Hasegawa, T.

1984-01-01

An investigation has been conducted in order to compile quantitative data on the reflective properties of metallic indium. The fabricated samples were of sufficiently high quality that differences from similar second-surface silvered mirrors were not apparent to the human eye. Three second-surface mirror samples were prepared by means of vacuum deposition techniques, yielding indium thicknesses of approximately 1000 A. Both hemispherical and specular measurements were made. It is concluded that metallic indium possesses a sufficiently high specular reflectance to be potentially useful in many solar energy applications.

Determination of indium in geological materials by electrothermal-atomization atomic absorption spectrometry with a tungsten-impregnated graphite furance

USGS Publications Warehouse

Zhou, L.; Chao, T.T.; Meier, A.L.

1984-01-01

The sample is fused with lithium metaborate and the melt is dissolved in 15% (v/v) hydrobromic acid. Iron(III) is reduced with ascorbic acid to avoid its coextraction with indium as the bromide into methyl isobutyl ketone. Impregnation of the graphite furnace with sodium tungstate, and the presence of lithium metaborate and ascorbic acid in the reaction medium improve the sensitivity and precision. The limits of determination are 0.025-16 mg kg-1 indium in the sample. For 22 geological reference samples containing more than 0.1 mg kg-1 indium, relative standard deviations ranged from 3.0 to 8.5% (average 5.7%). Recoveries of indium added to various samples ranged from 96.7 to 105.6% (average 100.2%). ?? 1984.

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

NASA Technical Reports Server (NTRS)

Gessert, T. A.; Li, X.; Wanlass, M. W.; Nelson, A. J.; Coutts, T. J.

1990-01-01

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kyle, Erin C. H.; Kaun, Stephen W.; Wu, Feng; Bonef, Bastien; Speck, James S.

2016-11-01

InAlN grown by plasma-assisted molecular beam epitaxy often contains a honeycomb microstructure. The honeycomb microstructure consists of 5-10 nm diameter aluminum-rich regions which are surrounded by indium-rich regions. Layers without this microstructure were previously developed for nominally lattice-matched InAlN and have been developed here for higher indium content InAlN. In this study, InAlN was grown in a nitrogen-rich environment with high indium to aluminum flux ratios at low growth temperatures. Samples were characterized by high-resolution x-ray diffraction, atomic force microscopy, high-angle annular dark-field scanning transmission electron microscopy, and atom probe tomography. Atomic force microscopy showed InAlN layers grown at temperatures below 450 °C under nitrogen-rich conditions were free of droplets. InAlN films with indium contents up to 81% were grown at temperatures between 410 and 440 °C. High-angle annular dark-field scanning transmission electron microscopy and atom probe tomography showed no evidence of honeycomb microstructure for samples with indium contents of 34% and 62%. These layers are homogeneous and follow a random alloy distribution. A growth diagram for InAlN of all indium contents is reported.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyle, Erin C. H., E-mail: erinkyle@engineering.ucsb.edu; Kaun, Stephen W.; Young, Erin C.

2015-06-01

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration wasmore » 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.« less

Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films

NASA Astrophysics Data System (ADS)

Al Garni, S. E.; Qasrawi, A. F.

In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 μm, the thickness of the nanosandwiched Indium thin films was varied in the range of 25-100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs ∼70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50-100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains.

Germanium and indium

USGS Publications Warehouse

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in southeastern Yunnan Province), and the Dabaoshan SEDEX deposit (located in the Nanling region of China) contain indium-enriched sphalerite. Another major potential source of indium occurs in the polymetallic tin-tungsten belt in the Eastern Cordillera of the Andes Mountains of Bolivia. Deposits there occur as dense arrays of narrow, elongate, indium-enriched tin oxide-polymetallic sulfide veins in volcanic rocks and porphyry stocks.Information about the behavior of germanium and indium in the environment is limited. In surface weathering environments, germanium and indium may dissolve from host minerals and form complexes with chloride, fluoride, hydroxide, organic matter, phosphate, or sulfate compounds. The tendency for germanium and indium to be dissolved and transported largely depends upon the pH and temperature of the weathering solutions. Because both elements are commonly concentrated in sulfide minerals, they can be expected to be relatively mobile in acid mine drainage where oxidative dissolution of sulfide minerals releases metals and sulfuric acid, resulting in acidic pH values that allow higher concentrations of metals to be dissolved into solution.

78 FR 69417 - Proposed Data Collections Submitted for Public Comment and Recommendations

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-19

... days of this notice. Proposed Project An Investigation of Lung Health at an Indium-Tin Oxide Production... conduct a study regarding the lung health of workers at an indium-tin oxide production facility. Indium-tin oxide (ITO) is a sintered material used in the manufacture of devices such as liquid crystal...

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2000-01-01

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

2009-01-01

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Adsorption of collagen to indium oxide nanoparticles and infrared emissivity study thereon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou Yuming; Shan Yun; Sun Yanqing

Adsorption of collagen to indium oxide nanoparticles was carried out in water-acetone solution at volumetric ratio of 1:1 with pH value varying from 3.2 to 9.3. As indicated by TGA, maximum collagen adsorption to indium oxide nanoparticles occurred at pH of 3.2. It was proposed that noncovalent interactions such as hydrogen bonding, hydrophilic and electrostatic interactions made main contributions to collagen adsorption. The IR emissivity values (8-14 {mu}m) of collagen-adsorbed indium oxide nanoparticles decreased significantly compared to either pure collagen or indium oxide nanoparticles possibly due to the interfacial interactions between collagen and indium oxide nanoparticles. And the lowest infraredmore » emissivity value of 0.587 was obtained at collagen adsorption of 1.94 g/100 g In{sub 2}O{sub 3}. On the chance of improved compatibility with organic adhesives, the chemical activity of adsorbed collagen was further confirmed by grafting copolymerization with methyl methacrylate by formation of polymer shell outside, as evidenced by IR spectrum and transmission electron microscopy.« less

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2001-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Effect of impurity on high pressure behavior of nano indium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chitnis, Abhishek, E-mail: abhishekchitnis87@gmail.com; Garg, Nandini; Mishra, A. K.

2015-06-24

Angle dispersive x-ray diffraction studies were carried out on a mixture of nano particles of indium titanate, indium oxide, and disordered TiO{sub 2} upto pressures of ∼ 45 GPa. Our studies show that indium titanate undergoes a partial decomposition to its constituent high pressure oxides. However, concomitantly a very small fraction of indium titanate transforms to a denser phase at ∼ 27.5 GPa. This transformation to new phase was found to be irreversible. At this pressure even cubic In{sub 2}O{sub 3} transformed to the In{sub 2}O{sub 3} (II) (iso-structural to Rh{sub 2}O{sub 3} (II)) phase, without any signature of themore » intermediate corundum phase. The high pressure In{sub 2}O{sub 3} (II) phase transforms to the corundum structure on release of pressure. These studies indicate that the presence of a large fraction of seed impurities could have facilitated the decomposition of indium titanate into its constituent oxides at the cost of its incomplete transformation to the high pressure denser phase.« less

Effect of Precursor Selection on the Photocatalytic Performance of Indium Oxide Nanomaterials for Gas-Phase CO 2 Reduction

DOE PAGES

Hoch, Laura B.; He, Le; Qiao, Qiao; ...

2016-06-01

Nonstoichiometric indium oxide nanoparticles, In 2O 3–x(OH)y, have been shown to function as active photocatalysts for gas-phase CO 2 reduction under simulated solar irradiation. We demonstrate that the choice of starting material has a strong effect on the photocatalytic activity of indium oxide nanoparticles. We also examine three indium oxide materials prepared via the thermal decomposition of either indium(III) hydroxide or indium(III) nitrate and correlate their stability and photocatalytic activity to the number and type of defect present in the material. Furthermore, we use 13CO 2 isotope-tracing experiments to clearly identify the origins of the observed carbon-containing products. Significantly, wemore » find that the oxidizing nature of the precursor anion has a substantial impact on the defect formation within the sample. Our study demonstrates the importance of surface defects in designing an active heterogeneous photocatalyst and provides valuable insight into key parameters for the precursor design, selection, and performance optimization of materials for gas-phase CO 2 reduction.« less

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2002-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Indium-mediated asymmetric Barbier-type propargylations: additions to aldehydes and ketones and mechanistic investigation of the organoindium reagents.

PubMed

Haddad, Terra D; Hirayama, Lacie C; Buckley, Jannise J; Singaram, Bakthan

2012-01-20

We report a simple, efficient, and general method for the indium-mediated enantioselective propargylation of aromatic and aliphatic aldehydes under Barbier-type conditions in a one-pot synthesis affording the corresponding chiral alcohol products in very good yield (up to 90%) and enantiomeric excess (up to 95%). The extension of this methodology to ketones demonstrated the need for electrophilic ketones more reactive than acetophenone as the reaction would not proceed with just acetophenone. Using the Lewis acid indium triflate [In(OTf)(3)] induced regioselective formation of the corresponding homoallenic alcohol product from acetophenone. However, this methodology demonstrated excellent chemoselectivity in formation of only the corresponding secondary homopropargylic alcohol product in the presence of a ketone functionality. Investigation of the organoindium intermediates under our reaction conditions shows the formation of allenylindium species, and we suggest that these species contain an indium(III) center. In addition, we have observed the presence of a shiny, indium(0) nugget throughout the reaction, irrespective of the stoichiometry, indicating disproportionation of indium halide byproduct formed during the reaction.

Highly conductive indium nanowires deposited on silicon by dip-pen nanolithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozhukhov, Anton; Volodin, Vladimir; Novosibirsk State University, Novosibirsk 630090

2015-04-14

In this paper, we developed a new dip-pen nanolithography (DPN) method. Using this method, we fabricated conductive nanowires with diameters of 30–50 nm on silicon substrates. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 × 10{sup −3} to 4 × 10{sup −2} Ω cm.

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

NASA Astrophysics Data System (ADS)

McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

2018-05-01

Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method

NASA Astrophysics Data System (ADS)

Lau, L. N.; Ibrahim, N. B.; Baqiah, H.

2015-08-01

This research was carried out to study the effect of different precursor concentrations on the physical properties of indium oxide (In2O3) thin film. In2O3 is a promising n-type semiconductor material that has been used in optoelectronic applications because of its highly transparent properties. It is a transparent conducting oxide with a wide band gap (∼3.7 eV). The experiment was started by preparing different precursor concentrations of indium nitrate hydrate (In (NO3)·H2O) solution and followed by the spin coating technique prior to an annealing process at 500 °C. Indium oxide thin films were characterized using an X-ray diffractometer, an ultraviolet-visible spectroscopy, a field emission scanning electron microscope and a Hall Effect Measurement System in order to determine the influence caused by the different molarities of indium oxide. The result showed that the film thickness increased with the indium oxide molarity. Film thicknesses were in the range of 0.3-135.1 nm and optical transparency of films was over 94%. Lowest resistivity of 2.52 Ω cm with a mobility of 26.60 cm2 V-1 S-1 and carrier concentration of 4.27 × 1017 cm-3 was observed for the indium oxide thin film prepared at 0.30 M.

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

PubMed Central

2014-01-01

Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded. PMID:25024692

Enantioselective and Regioselective Indium(III)-Catalyzed Addition of Pyrroles to Isatins

PubMed Central

Gutierrez, Elisa G.; Wong, Casey J.; Sahin, Aziza H.

2011-01-01

The indium(III)-catalyzed enantioselective and regioselective addition of pyrroles to isatins is described. The effects of metal and solvent on the reactivity and selectivity are compared and discussed, demonstrating that the indium(III)-indapybox complex provides the most effective catalyst. A case of divergent reactivity between pyrroles and indoles is presented. PMID:21992567

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles as in vitro Correlates to Pulmonary Toxicity in vivo

PubMed Central

Gwinn, William M.; Qu, Wei; Bousquet, Ronald W.; Price, Herman; Shines, Cassandra J.; Taylor, Genie J.; Waalkes, Michael P.; Morgan, Daniel L.

2015-01-01

Macrophage-solubilized indium-containing particles (ICPs) were previously shown in vitro to be cytotoxic. In this study, we compared macrophage solubilization and cytotoxicity of indium phosphide (InP) and indium-tin oxide (ITO) with similar particle diameters (∼1.5 µm) and then determined if relative differences in these in vitro parameters correlated with pulmonary toxicity in vivo. RAW 264.7 macrophages were treated with InP or ITO particles and cytotoxicity was assayed at 24 h. Ionic indium was measured in 24 h culture supernatants. Macrophage cytotoxicity and particle solubilization in vitro were much greater for InP compared with ITO. To correlate changes in vivo, B6C3F1 mice were treated with InP or ITO by oropharyngeal aspiration. On Days 14 and 28, bronchoalveolar lavage (BAL) and pleural lavage (PL) fluids were collected and assayed for total leukocytes. Cell differentials, lactate dehydrogenase activity, and protein levels were also measured in BAL. All lavage parameters were greatly increased in mice treated with InP compared with ITO. These data suggest that macrophage solubilization and cytotoxicity of some ICPs in vitro are capable of predicting pulmonary toxicity in vivo. In addition, these differences in toxicity were observed despite the two particulate compounds containing similar amounts of indium suggesting that solubilization, not total indium content, better reflects the toxic potential of some ICPs. Soluble InCl3 was shown to be more cytotoxic than InP to macrophages and lung epithelial cells in vitro further suggesting that ionic indium is the primary cytotoxic component of InP. PMID:25527823

Superconductivity induced by In substitution into the topological crystalline insulator Pb0.5Sn0.5Te

NASA Astrophysics Data System (ADS)

Zhong, R. D.; Schneeloch, J. A.; Liu, T. S.; Camino, F. E.; Tranquada, J. M.; Gu, G. D.

2014-07-01

Indium substitution turns the topological crystalline insulator (TCI) Pb0.5Sn0.5Te into a possible topological superconductor. To investigate the effect of the indium concentration on the crystal structure and superconducting properties of (Pb0.5Sn0.5)1-xInxTe, we have grown high-quality single crystals using a modified floating-zone method and have performed systematic studies for indium content in the range 0≤x≤0.35. We find that the single crystals retain the rocksalt structure up to the solubility limit of indium (x ˜0.30). Experimental dependencies of the superconducting transition temperature (Tc) and the upper critical magnetic field (Hc2) on the indium content x have been measured. The maximum Tc is determined to be 4.7 K at x =0.30, with μ0Hc2(T =0)≈5 T.

Reliable bonding using indium-based solders

NASA Astrophysics Data System (ADS)

Cheong, Jongpil; Goyal, Abhijat; Tadigadapa, Srinivas; Rahn, Christopher

2004-01-01

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

Reliable bonding using indium-based solders

NASA Astrophysics Data System (ADS)

Cheong, Jongpil; Goyal, Abhijat; Tadigadapa, Srinivas; Rahn, Christopher

2003-12-01

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10-11 mbar-l/s when tested using a commercial helium leak tester.

Effect of indium addition in U-Zr metallic fuel on lanthanide migration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yeon Soo; Wiencek, T.; O'Hare, E.

Advanced fast reactor concepts to achieve ultra-high burnup (~50%) require prevention of fuel-cladding chemical interaction (FCCI). Fission product lanthanide accumulation at high burnup is substantial and significantly contributes to FCCI upon migration to the cladding interface. Diffusion barriers are typically used to prevent interaction of the lanthanides with the cladding. A more active method has been proposed which immobilizes the lanthanides through formation of stable compounds with an additive. Theoretical analysis showed that indium, thallium, and antimony are good candidates. Indium was the strongest candidate because of its low reactivity with iron-based cladding alloys. Characterization of the as-fabricated alloys wasmore » performed to determine the effectiveness of the indium addition in forming compounds with lanthanides, represented by cerium. Tests to examine how effectively the dopant prevents lanthanide migration under a thermal gradient were also performed. The results showed that indium effectively prevented cerium migration.« less

Effect of variation in indium concentration on the photosensitivity of chlorine doped In{sub 2}S{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherian, Angel Susan; Kartha, C. Sudha; Vijayakumar, K. P.

2014-01-28

Consequence of variation in Indium concentration in chlorine doped In2S{sub 3} thin films deposited by spray pyrolysis technique was studied. Chlorine was incorporated in the spray solution, using HCl and Indium concentration was varied by adjusting In/S ratio Interestingly, the photo response of all chlorine doped samples augmented compared to pristine samples; but the highest photosensitivity value of ∼2300 was obtained only when 36ml 0.5M HCl was added to the solution of In{sub 2}S{sub 3} having In/S=2/8. It was also observed that samples with high photosensitivity possess higher band gap and variation in sub band gap absoption levels were observedmore » with increase in Indium concentration. The present study proved that concentration of Indium plays an important role in controlling the crystallinity and photosensitivity of chlorine doped samples.« less

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Yao; National Institute for Materials Science, Tsukuba, Ibaraki 305-0044; Sun, Huabin

2015-05-15

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (ELO), and the spatial distribution of indium composition in the InGaN layer was characterized by using cathodoluminescence. It is found that the indium composition is mainly controlled by the diffusion behaviors of metal atoms (In and Ga) on the surface. The diffusivity of metal atoms decreases sharply as migrating to the region with a high density of dislocations and other defects, whichmore » influences the distribution of indium composition evidently. Our work is beneficial for the understanding of ELO process and the further development of InGaN/GaN heterostructure based devices.« less

Optimal design study of high efficiency indium phosphide space solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

Energy structure and radiative lifetimes of InxGa1-xN /AlN quantum dots

NASA Astrophysics Data System (ADS)

Aleksandrov, Ivan A.; Zhuravlev, Konstantin S.

2018-01-01

We report calculations of the ground state transition energies and the radiative lifetimes in InxGa1-xN /AlN quantum dots with different size and indium content. The ground state transition energy and the radiative lifetime of the InxGa1-xN /AlN quantum dots can be varied over a wide range by changing the height of the quantum dot and the indium content. The sizes and compositions for quantum dots emitting in the wavelength range for fiber-optic telecommunications have been found. The radiative lifetime of the InxGa1-xN /AlN quantum dots increases with increase in quantum dot height at a constant indium content, and increases with increase in indium content at constant quantum dot height. For quantum dots with constant ground state transition energy the radiative lifetime decreases with increase in indium content.

Indium phosphide space solar cell research: Where we are and where we are going

NASA Technical Reports Server (NTRS)

Jain, R. K.; Flood, D. J.; Weinberg, Irving

1995-01-01

Indium phosphide is considered to be a strong contender for many photovoltaic space applications because of its radiation resistance and its potential for high efficiency. An overview of recent progress is presented, and possible future research directions for indium phosphide space solar cells are discussed. The topics considered include radiation damage studies and space flight experiments.

Electron emitting device and method of making the same

DOEpatents

Olsen, Gregory Hammond; Martinelli, Ramon Ubaldo; Ettenberg, Michael

1977-04-19

A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Microstructure-mechanical property relationships for Al-Cu-Li-Zr alloys with minor additions of cadmium, indium or tin

NASA Technical Reports Server (NTRS)

Blackburn, L. B.; Starke, E. A., Jr.

1989-01-01

Minor amounts of cadmium, indium or tin were added to a baseline alloy with the nominal composition of Al-2.4Cu-2.4Li-0.15Zr. These elements were added in an attempt to increase the age-hardening response of the material such that high strengths could be achieved through heat-treatment alone, without the need for intermediate mechanical working. The alloy variant containing indium achieved a higher peak hardness in comparison to the other alloy variations, including the baseline material, when aged at temperatures ranging from 160 C to 190 C. Tensile tests on specimens peak-aged at 160 indicated the yield strength of the indium-bearing alloy increased by approximately 15 percent compared to that of the peak-aged baseline alloy. In addition, the yield strength obtained in the indium-bearing alloy was comparable to that reported for similar baseline material subjected to a 6 percent stretch prior to peak-aging at 190 C. The higher strength levels obtaied for the indium-bearing alloy are attributed to increased number densities and homogeneity of both the T1 and theta-prime phases, as determined by TEM studies.

(Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

DOEpatents

Marks, Tobin J.; Chen, You-Xian

2001-01-01

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In2 O3 Films Using an InIII Amidinate and H2 O.

PubMed

Kim, Sang Bok; Jayaraman, Ashwin; Chua, Danny; Davis, Luke M; Zheng, Shao-Liang; Zhao, Xizhu; Lee, Sunghwan; Gordon, Roy G

2018-06-05

Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In 2 O 3 using water as a co-precursor at substrate temperatures below 200 °C. Several alternative indium sources have been developed, but none allows ALD at lower temperatures except in the presence of oxidants such as O 2 or O 3 , which are not compatible with some substrates or alloying processes. We have synthesized a new indium precursor, tris(N,N'-diisopropylformamidinato)indium(III), compound 1, which allows ALD of pure, carbon-free In 2 O 3 films using H 2 O as the only co-reactant, on substrates in the temperature range 150-275 °C. In contrast, replacing just the H of the anionic iPrNC(H)NiPr ligand with a methyl group (affording the known tris(N,N'-diisopropylacetamidinato)indium(III), compound 2) results in a considerably higher and narrower ALD window in the analogous reaction with H 2 O (225-300 °C). Kinetic studies demonstrate that a higher rate of surface reactions in both parts of the ALD cycle gives rise to this difference in the ALD windows. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Indium Lung Disease

PubMed Central

Nakano, Makiko; Omae, Kazuyuki; Takeuchi, Koichiro; Chonan, Tatsuya; Xiao, Yong-long; Harley, Russell A.; Roggli, Victor L.; Hebisawa, Akira; Tallaksen, Robert J.; Trapnell, Bruce C.; Day, Gregory A.; Saito, Rena; Stanton, Marcia L.; Suarthana, Eva; Kreiss, Kathleen

2012-01-01

Background: Reports of pulmonary fibrosis, emphysema, and, more recently, pulmonary alveolar proteinosis (PAP) in indium workers suggested that workplace exposure to indium compounds caused several different lung diseases. Methods: To better understand the pathogenesis and natural history of indium lung disease, a detailed, systematic, multidisciplinary analysis of clinical, histopathologic, radiologic, and epidemiologic data for all reported cases and workplaces was undertaken. Results: Ten men (median age, 35 years) who produced, used, or reclaimed indium compounds were diagnosed with interstitial lung disease 4-13 years after first exposure (n = 7) or PAP 1-2 years after first exposure (n = 3). Common pulmonary histopathologic features in these patients included intraalveolar exudate typical of alveolar proteinosis (n = 9), cholesterol clefts and granulomas (n = 10), and fibrosis (n = 9). Two patients with interstitial lung disease had pneumothoraces. Lung disease progressed following cessation of exposure in most patients and was fatal in two. Radiographic data revealed that two patients with PAP subsequently developed fibrosis and one also developed emphysematous changes. Epidemiologic investigations demonstrated the potential for exposure to respirable particles and an excess of lung abnormalities among coworkers. Conclusions: Occupational exposure to indium compounds was associated with PAP, cholesterol ester crystals and granulomas, pulmonary fibrosis, emphysema, and pneumothoraces. The available evidence suggests exposure to indium compounds causes a novel lung disease that may begin with PAP and progress to include fibrosis and emphysema, and, in some cases, premature death. Prospective studies are needed to better define the natural history and prognosis of this emerging lung disease and identify effective prevention strategies. PMID:22207675

Preparation of CIGS-based solar cells using a buffered electrodeposition bath

DOEpatents

Bhattacharya, Raghu Nath

2007-11-20

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Semiconductor material and method for enhancing solubility of a dopant therein

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Rubia, Tomas Diaz; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2003-09-09

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Occult purulent pericarditis detected by indium-111 leukocyte imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenberg, M.L.; Niebulski, H.I.; Uretsky, B.F.

1984-05-01

Leukocyte imaging with indium-111 is a relatively new technique which, to this point in time, has been discussed almost exclusively in the radiologic literature. Although this procedure has been used mainly to detect intra-abdominal infection, the thorax is routinely imaged along with the abdomen, and therefore detection of cardiac disease may be feasible. This case report is of a young woman after liver transplantation who developed occult purulent pericarditis initially detected by a leukocyte scan with indium-111. This case demonstrates that striking pericardial uptake on a whole-body indium-111 leukocyte scan can occur with purulent pericarditis, and it reemphasizes how insidiouslymore » purulent pericarditis may present in an immunosuppressed patient.« less

A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

DOEpatents

Sadigh, Babak; Lenosky, Thomas J.; Diaz de la Rubia, Tomas; Giles, Martin; Caturla, Maria-Jose; Ozolins, Vidvuds; Asta, Mark; Theiss, Silva; Foad, Majeed; Quong, Andrew

2005-03-29

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

False positive indium-111 white blood cell scan in a closed clavicle fracture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, R.J.; Gordon, L.

1988-01-01

Aggressive treatment of the multiply injured patient often requires early fixation of many fractures, some of which may be open. Often, patients develop postoperative fevers requiring a thorough workup to rule out infection. Recently, indium-111 white blood cell (WBC) imaging has become a valuable adjunct in the diagnosis of acute infection. The patient described had a simple, closed clavicle fracture with markedly increased activity on an indium-111 WBC scan obtained for fever workup. This subsequently proved to be a normal, healing, noninfected fracture by other diagnostic techniques. Noninfected, simple closed fractures should be added to the list of causes formore » a false-positive indium-111 WBC scan.« less

Synthesis, characterization and investigation of the photophysical and photochemical properties of highly soluble novel metal-free, zinc(II), and indium(III) phthalocyanines substituted with 2,3,6-trimethylphenoxy moieties.

PubMed

Gürel, Ekrem; Pişkin, Mehmet; Altun, Selçuk; Odabaş, Zafer; Durmuş, Mahmut

2015-04-07

This work presents the synthesis and characterization of metal-free, zinc(II), and indium(III)acetate phthalocyanines substituted with 2,3,6-trimethylphenoxy groups at the peripheral and non-peripheral positions. The photophysical (fluorescence quantum yields and lifetimes) and photochemical (singlet oxygen generation and photodegradation under light irradiation) properties of these novel phthalocyanines and unsubstituted zinc(II) and indium(III)acetate phthalocyanines were investigated in dimethylformamide solution. The effects of the types of substituents and their positions and the variety of central metal ions on the phthalocyanine core on their spectroscopic, photophysical and photochemical properties were also determined. The studied 2,3,6-trimethylphenoxy substituted metal-free, zinc(II) and indium(III)acetate phthalocyanines especially indium(III)acetate derivatives exhibited appropriate photophysical and photochemical properties such as high singlet oxygen generation and these phthalocyanines can be potential Type II photosensitizers for photodynamic therapy in cancer applications.

A Novel Fabrication Method of Bi₂Te₃-Based Thermoelectric Modules by Indium Electroplating and Thermocompression Bonding.

PubMed

Yoon, Jongchan; Bae, Sung Hwa; Sohn, Ho-Sang; Son, Injoon; Kim, Kyung Tae; Ju, Young-Wan

2018-09-01

In this study, we devised a method to bond thermoelectric elements directly to copper electrodes by plating indium with a relatively low melting point. A coating of indium, ~30 μm in thickness, was fabricated by electroplating the surface of a Bi2Te3-based thermoelectric element with a nickel diffusion barrier layer. They were then subjected to direct thermocompression bonding at 453 K on a hotplate for 10 min at a pressure of 1.1 kPa. Scanning electron microscopy images confirmed that a uniform bond was formed at the copper electrode/thermoelectric element interface, and the melted/solidified indium layer was defect free. Thus, the proposed novel method of fabricating a thermoelectric module by electroplating indium on the surface of the thermoelectric element and directly bonding with the copper electrode can be used to obtain a uniformly bonded interface even at a relatively low temperature without the use of solder pastes.

Technologies for Trapped-Ion Quantum Information Systems

DTIC Science & Technology

2016-03-21

mate- rials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and...trapping techniques. Keywords ion traps · quantum computation · quantum information · trapped ions · ion-photon interface · graphene · indium tin oxide...displays are typically made of indium tin oxide (ITO), a material that is both an elec- trical and an optical conductor. However, using ITO electrodes

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

NASA Astrophysics Data System (ADS)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices.

PubMed

Lin, Qingfeng; Sarkar, Debarghya; Lin, Yuanjing; Yeung, Matthew; Blankemeier, Louis; Hazra, Jubin; Wang, Wei; Niu, Shanyuan; Ravichandran, Jayakanth; Fan, Zhiyong; Kapadia, Rehan

2017-05-23

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

Cosputtering crystal growth of zinc oxide-based composite films: From the effects of doping to phase on photoactivity and gas sensing properties

NASA Astrophysics Data System (ADS)

Liang, Yuan-Chang; Lee, Chia-Min

2016-10-01

ZnO-In2O3 (InO) composite thin films were grown by radio frequency cosputtering ZnO and InO ceramic targets in this study. The indium content of the composite films was varied from 1.7 at. % to 8.2 at. % by varying the InO sputtering power during cosputtering thin-film growth. X-ray diffraction and transmission electron microscopy analysis results show that the high indium content leads to the formation of a separated InO phase in the ZnO matrix. The surface crystallite size and roughness of the ZnO-InO composite films grown here increased with an increasing indium content. Furthermore, under the conditions of a higher indium content and InO sputtering power, the number of crystal defects in the composite films increased, and the optical absorbance edge of the composite films broadened. The photoactivity and ethanol gas sensing response of the ZnO-InO composite films increased as their indium content increased; this finding is highly correlated with the microstructural evolution of ZnO-InO composite films of various indium contents, which is achieved by varying the InO sputtering power during cosputtering.

The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn

2015-08-24

Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. Themore » Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.« less

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

PubMed

Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

2016-12-01

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

[Risk analysis and assessment of occupational hazard fromindiumand its compounds in manufacture of liquid crystal display panel].

PubMed

Qiu, Haili; Zhou, Wei; Li, Zhimin; Tian, Dongchao; Weng, Shaofan; He, Juntao

2015-08-01

To understand the exposed positions and levels of indium and its compounds in manufacture of liquid crystal displays, and to evaluate the degree of occupational hazard from indium and its compounds. On-site investigation of occupational health, occupational hazard monitoring, and occupational health examination were used to evaluate the degree of occupational hazard from indium and its compounds in three manufacturers of liquid crystal display panel in Shenzhen, Guangdong, China. The time-weighted average (TWA) and short-term exposure limit (STEL) concentrations of indium and its compounds to which sputtering machine operating positions were exposed were less than 0.002~0.004 mg/m³ and 0.006~0.007 mg/m³, respectively, both of which complied with the National Hygienic Standard (PC-TWA = 0.1 mg/m³; PC-STEL = 0.3 mg/m³); the TWA and STEL concentrations of indium and its compounds to which grinding positions were exposed were 0.114~2.98 mg/m³ and 0.31~10.02 mg/m³, respectively, both of which exceeded the National Hygienic Standard with the highest concentration 33-fold higher than the standard. No significant health damages were found in exposed workers according to the results of occupational health examination. The grinding positions are the key to the control of occupational hazard from indium and its compounds in manufacture of liquid crystal display panel. The workers should be equipped with the anti-particulate full-face respirator, which is an effective way to prevent occupational hazard from indium and its compounds.

Quantification of indium in steel using PIXE

NASA Astrophysics Data System (ADS)

Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J. C.

1989-04-01

The quantitative analysis of steel for endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important.

High-efficiency indium tin oxide/indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Li, X.; Wanlass, M. W.; Gessert, T. A.; Emery, K. A.; Coutts, T. J.

1989-01-01

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Thermodynamic properties of uranium in liquid gallium, indium and their alloys

NASA Astrophysics Data System (ADS)

Volkovich, V. A.; Maltsev, D. S.; Yamshchikov, L. F.; Osipenko, A. G.

2015-09-01

Activity, activity coefficients and solubility of uranium was determined in gallium, indium and gallium-indium alloys containing 21.8 (eutectic), 40 and 70 wt.% In. Activity was measured at 573-1073 K employing the electromotive force method, and solubility between room temperature (or the alloy melting point) and 1073 K employing direct physical measurements. Activity coefficients were obtained from the difference of experimentally determined temperature dependencies of uranium activity and solubility. Intermetallic compounds formed in the respective alloys were characterized using X-ray diffraction. Partial and excess thermodynamic functions of uranium in the studied alloys were calculated. Liquidus lines in U-Ga and U-In phase diagrams from the side rich in gallium or indium are proposed.

Measuring systolic ankle and toe pressure using the strain gauge technique--a comparison study between mercury and indium-gallium strain gauges.

PubMed

Broholm, Rikke; Wiinberg, Niels; Simonsen, Lene

2014-09-01

Measurement of the ankle and toe pressures are often performed using a plethysmograph, compression cuffs and a strain gauge. Usually, the strain gauge contains mercury but other alternatives exist. From 2014, the mercury-containing strain gauge will no longer be available in the European Union. The aim of this study was to compare an indium-gallium strain gauge to the established mercury-containing strain gauge. Consecutive patients referred to the Department of Clinical Physiology and Nuclear Medicine at Bispebjerg and Frederiksberg Hospitals for measurements of systolic ankle and toe pressures volunteered for the study. Ankle and toe pressures were measured twice with the mercury and the indium-gallium strain gauge in random order. Comparison of the correlation between the mean pressure using the mercury and the indium-gallium device and the difference between the two devices was performed for both toe and ankle level. A total of 53 patients were included (36 male). Mean age was 69 (range, 45-92 years). Mean pressures at toe and ankle level with the mercury and the indium-gallium strain gauges were 77 (range, 0-180) mm Hg and 113 (range, 15-190) mm Hg, respectively. Comparison between the mercury and the indium-gallium strain gauge showed a difference in toe blood pressure values of - 0.7 mm Hg (SD: 7.0). At the ankle level, a difference of 2.0 mm Hg (SD: 8.6) was found. The two different devices agree sufficiently in the measurements of systolic ankle and toe pressure for the indium-gallium strain gauge to replace the mercury strain gauge.

A Comparison of Gallium and Indium Alkoxide Complexes as Catalysts for Ring-Opening Polymerization of Lactide.

PubMed

Kremer, Alexandre B; Andrews, Ryan J; Milner, Matthew J; Zhang, Xu R; Ebrahimi, Tannaz; Patrick, Brian O; Diaconescu, Paula L; Mehrkhodavandi, Parisa

2017-02-06

The impact of the metal size and Lewis acidity on the polymerization activity of group 13 metal complexes was studied, and it was shown that, within the same ligand family, indium complexes are far more reactive and selective than their gallium analogues. To this end, gallium and aluminum complexes supported by a tridentate diaminophenolate ligand, as well as gallium complexes supported by N,N'-ethylenebis(salicylimine)(salen) ligands, were synthesized and compared to their indium analogues. Using the tridentate ligand set, it was possible to isolate the gallium chloride complexes 3 and (±)-4 and the aluminum analogues 5 and (±)-6. The alkoxygallium complex (±)-2, supported by a salen ligand, was also prepared and characterized and, along with the three-component system GaCl 3 /BnOH/NEt 3 , was tested for the ring-opening polymerization of lactide and ε-caprolactone. The polymerization rates and selectivities of both systems were significantly lower than those for the indium analogues. The reaction of (±)-2 with 1 equiv of lactide forms the first insertion product, which is stable in solution and can be characterized at room temperature. In order to understand the differences of the reactivity within the group 13 metal complexes, a Lewis acidity study using triethylphosphine oxide (the Gutmann-Beckett method) was undertaken for a series of aluminum, gallium, and indium halide complexes; this study shows that indium halide complexes are less Lewis acidic than their aluminum and gallium analogues. Density functional theory calculations show that the Mulliken charges for the indium complexes are higher than those for the gallium analogues. These data suggest that the impact of ligands on the reactivity is more significant than that of the metal Lewis acidity.

Vapor phase tri-methyl-indium seeding system suitable for high temperature spectroscopy and thermometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whiddon, R.; Zhou, B.; Borggren, J.

2015-09-15

Tri-methyl-indium (TMI) is used as an indium transport molecule to introduce indium atoms to reactive hot gas flows/combustion environments for spectroscopic diagnostics. A seeding system was constructed to allow the addition of an inert TMI laden carrier gas into an air/fuel mixture burning consequently on a burner. The amount of the seeded TMI in the carrier gas can be readily varied by controlling the vapor pressure through the temperature of the container. The seeding process was calibrated using the fluorescent emission intensity from the indium 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 1/2} and 6{sup 2}S{sub 1/2} → 5{sup 2}P{sub 3/2}more » transitions as a function of the calculated TMI seeding concentration over a range of 2–45 ppm. The response was found to be linear over the range 3–22.5 ppm; at concentrations above 25 ppm there is a loss of linearity attributable to self-absorption or loss of saturation of TMI vapor pressure in the carrier gas flow. When TMI was introduced into a post-combustion environment via an inert carrier gas, molecular transition from InH and InOH radicals were observed in the flame emission spectrum. Combined laser-induced fluorescence and absorption spectroscopy were applied to detect indium atoms in the TMI seeded flame and the measured atomic indium concentration was found to be at the ppm level. This method of seeding organometallic vapor like TMI to a reactive gas flow demonstrates the feasibility for quantitative spectroscopic investigations that may be applicable in various fields, e.g., chemical vapor deposition applications or temperature measurement in flames with two-line atomic fluorescence.« less

Junction characteristics of indium tin oxide/indium phosphide solar cells

NASA Astrophysics Data System (ADS)

Sheldon, P.; Ahrenkiel, R. K.; Hayes, R. E.; Russell, P. E.; Nottenburg, R. N.; Kazmerski, L. L.

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12 percent at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. We believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

Status of indium phosphide solar cell development at Spire

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Keavney, C. J.; Vernon, S. M.

1987-01-01

On-going development of indium phosphide solar cells for space applications is presented. The development is being carried out with a view towards both high conversion efficiency and simplicity of manufacture. The cell designs comprise the ion-implanted cell, the indium tin oxide top contact cell, and the epitaxial cell grown by metal organic chemical vapor deposition. Modelling data on the limit to the efficiency are presented and comparison is made to measured performance data.

Application of Copper Indium Gallium Diselenide Photovoltaic Cells to Extend the Endurance and Capabilities of Unmanned Aerial Vehicles

DTIC Science & Technology

2009-09-01

Group V element to make them n or p material. Another common group of semiconductors are called III–V compounds , such as gallium arsenide (GaAs), or...these compounds used for photovoltaics are Cadmium Telluride (CdTe), and Copper Indium Gallium DiSelenide, commonly referred to as CIGS [49]. Figure...INDIUM GALLIUM DISELENIDE PHOTOVOLTAIC CELLS TO EXTEND THE ENDURANCE AND CAPABILITIES OF UNMANNED AERIAL VEHICLES by William R. Hurd

Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

PubMed

Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

2013-03-25

InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances

NASA Astrophysics Data System (ADS)

Zhang, Zhuo; Choi, Mingi; Baek, Minki; Yong, Kijung

2015-05-01

A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.

Thermal replacement reaction: a novel route for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-nanostructures by replacing cadmium with indium and their photoelectrochemical and photocatalytic performances.

PubMed

Zhang, Zhuo; Choi, Mingi; Baek, Minki; Yong, Kijung

2015-05-21

A novel route called thermal replacement reaction was demonstrated for synthesizing eco-friendly ZnO@γ-In2Se3 hetero-structural nanowires on FTO glass by replacing the element cadmium with indium for the first time. The indium layer was coated on the surface of the ZnO nanowires beforehand, then CdSe quantum dots were deposited onto the coated indium layer, and finally the CdSe quantum dots were converted to γ-In2Se3 quantum dots by annealing under vacuum at 350 °C for one hour. The prepared ZnO@γ-In2Se3 hetero-nanostructures exhibit stable photoelectrochemical properties that can be ascribed to the protection of the In2O3 layer between the ZnO nanowire and γ-In2Se3 quantum dots and better photocatalytic performance in the wide wavelength region from 400 nm to nearly 750 nm. This strategy for preparing the ZnO@γ-In2Se3 hetero-nanostructures not only enriches our understanding of the single replacement reaction where the active element cadmium can be replaced with indium, but also opens a new way for the in situ conversion of cadmium-based to eco-friendly indium-based nano-devices.

The use of indium-111 labeled platelet scanning for the detection of asymptomatic deep venous thrombosis in a high risk population

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siegel, R.S.; Rae, J.L.; Ryan, N.L.

Five hundred indium-111 labeled platelet imaging studies (387 donor and 113 autologous) were performed postoperatively in 473 patients who had undergone total hip replacement, total knee replacement, or internal fixation of a hip fracture to detect occult deep venous thrombosis. All patients had been anticoagulated prophylactically with aspirin, warfarin sodium (Coumadin), or dextran. Thirty-four possible cases of proximal deep venous thrombosis were identified in 28 asymptomatic patients. To verify the scan results, 31 venograms were performed in 25 patients (three refused). In 21 of 31 cases, totally occlusive thrombi were detected; in 5 cases, partially occlusive thrombi were detected; inmore » 5 cases, no thrombus was seen. No patient who had a negative scan nor any patient who had a verified positive scan (and received appropriate heparin therapy) subsequently developed symptoms or signs of pulmonary embolism. One hundred forty-one indium study patients also underwent Doppler ultrasonography/impedance plethysmography (Doppler/IPG) as a comparative non-invasive technique. In 137 cases, the results of the indium study and Doppler/IPG studies were congruent. The indium study had no false negative results that were detected by Doppler/IPG. No patient had any clinically evident toxicity. These results suggest that indium-111 labeled platelet scanning is a safe, noninvasive means for identifying DVT in high risk patients.« less

Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Lee, Minkyung; Kim, Minho; Jo, Jeong-Wan; Park, Sung Kyu; Kim, Yong-Hoon

2018-01-01

This study offers a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in order to achieve rapid photo-recovery. Various analyses were used to examine the photo-instability of indium-gallium-zinc-oxide (IGZO) TFTs including negative-bias-illumination-stress (NBIS) and transient photo-response behaviors. It was found that the indium ratio in metallic components had a significant impact on their PPC and photo-recovery characteristics. In particular, when the indium ratio was low (51.5%), the PPC characteristic was significantly suppressed and achieving rapid photo-recovery was possible without significantly affecting the electrical performance of AOSs. These results imply that the optimization of the indium composition ratio may allow achieving highly photo-stable and near PPC-free characteristics while maintaining high electrical performance of AOSs. It is considered that the negligible PPC behavior and rapid photo-recovery observed in IGZO TFTs with a lower indium composition are attributed to the less activation energy required for the neutralization of ionized oxygen vacancies.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

2015-03-01

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Silicate calculi, a rare cause of kidney stones in children.

PubMed

Taşdemir, Mehmet; Fuçucuoğlu, Dilara; Özman, Oktay; Sever, Lale; Önal, Bülent; Bilge, Ilmay

2017-02-01

Urinary silicate calculi in humans are extremely rare. Reported cases of silicate calculi are mostly documented in adults and are commonly related to an excessive intake of magnesium trisilicate in food or drugs. Published studies on the presence of silicate calculi in children are scarce. Three cases of silicate kidney stones without prior silicate intake are reported. Two patients underwent surgical treatment, and the third patient was treated using conservative methods. Urinalysis revealed no underlying metabolic abnormalities. Analyses revealed that silicate was the major component of the stones. Siliceous deposits in urinary stones may be more common than anticipated, and the underlying pathophysiology remains to be clarified.

Influence of nitrogen on magnetic properties of indium oxide

NASA Astrophysics Data System (ADS)

Ashok, Vishal Dev; De, S. K.

2013-07-01

Magnetic properties of indium oxide (In2O3) prepared by the decomposition of indium nitrate/indium hydroxide in the presence of ammonium chloride (NH4Cl) has been investigated. Structural and optical characterizations confirm that nitrogen is incorporated into In2O3. Magnetization has been convoluted to individual diamagnetic paramagnetic and ferromagnetic contributions with varying concentration of NH4Cl. Spin wave with diverging thermal exponent dominates in both field cool and zero field cool magnetizations. Uniaxial anisotropy plays an important role in magnetization as a function of magnetic field at higher concentration of NH4Cl. Avrami analysis indicates the absence of pinning effect in the magnetization process. Ferromagnetism has been interpreted in terms of local moments induced by anion dopant and strong hybridization with host cation.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

NASA Astrophysics Data System (ADS)

Deshpande, Manisha; Maske, Dilip; Choudhari, Rashmi; Arora, Brij Mohan; Gadkari, Dattatray

2016-05-01

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.

Prototyping for LENS

NASA Astrophysics Data System (ADS)

Rasco, B. C.

2012-03-01

The Low-Energy Neutrino Spectroscopy (LENS) experiment will precisely measure the energy spectrum of low-energy solar neutrinos via charged-current neutrino reactions on indium. The LENS detector concept applies indium-loaded scintillator in an optically-segmented lattice geometry to achieve precise time and spatial resolution with unprecedented sensitivity for low-energy neutrino events. The LENS collaboration is currently developing prototypes that aim to demonstrate the performance and selectivity of the technology and to benchmark Monte Carlo simulations that will guide scaling to the full LENS instrument. Currently a 120 liter prototype, microLENS, is operating with pure scintillator (no indium loading) in the Kimballton Underground Research Facility (KURF). We will present results from initial measurements with microLENS and plans for a 400 liter prototype, miniLENS, using indium loaded scintillator that will be installed this summer.

Synthesis and Structural Characterization of Tris(dimethyldithiocarbamate)Indium(III), In[S2CN(CH3)2]3

NASA Technical Reports Server (NTRS)

Clark, Eric B.; Breen, Marc L.; Fanwick, Phillip E.; Hepp, Aloysius F.; Duraj, Stan A.

1998-01-01

The synthesis and structure of the indium dithiocarbamate, In[SCN(CH3)2]3*1/2 4-mepy (4-mepy = 4-methylpyridine), is described. Indium metal was oxidized by tetramethylthiuramdisulfide in 4-methylpyridine at 25C to form a new, homoleptic indium(HI) dithiocarbamate in yields exceeding 60%. In[S2CN(CH3)213 exists as a discrete molecule with a distorted-octahedral geometry. The compound crystallizes in the P 1-bar (No. 2) space group with a = 9.282(l)A, b = 10.081(1)A, c = 12.502 A, alpha= 73.91 (1) degrees, beta = 70.21(1) degrees, gamma = 85.84(1) degrees, Z = 2,v(A(exp 3)) =1057.3(3), R = 0.046, and R(sub w) = 0.061.

MOCVD growth of gallium nitride with indium surfactant

NASA Astrophysics Data System (ADS)

Won, Dong Jin

In this thesis research, the effect of indium surfactant on Ga-polar and N-polar GaN films grown at 950 °C by MOCVD on various substrates such as Si-face SiC, bulk GaN, Si(111), and C-face SiC was studied to investigate the stress relaxation mechanism, structural, and optical properties of GaN films which were modified by the indium surfactant. The effect of indium surfactant on GaN films grown on SiC was studied first. In the 1.8 microm thick Ga-polar GaN films grown on lattice-mismatched Si-face SiC substrates utilizing indium surfactant at 950 °C, inverted hexagonal pyramid surface defects, so-called V-defects which consist of six (1011) planes, formed at threading dislocations on the GaN surface, which gave rise to the relaxation of compressive misfit stress in an elastic way. Simultaneously, enhanced surface mobility of Ga and N adatoms with indium surfactant lead to improved 2D growth, which may be contradictory to the formation of surface defects like V-defects. In order to find the driving force for V-defect formation in the presence of indium, a nucleation and growth model was developed, taking into consideration the strain, surface, and dislocation energies modified by indium surfactant. This model found that the V-defect formation can be energetically preferred since indium reduces the surface energy of the (1011) plane, which gives rise to the V-defect formation and growth that can overcome the energy barrier at the critical radius of the V-defect. These Ga-polar GaN films were found to be unintentionally doped with Si. Thus, an investigation into the effect of intentional Si doping at a constant TMIn flow rate on GaN films was also performed. Si turned out to be another important factor in the generation of V-defects because Si may be captured at the threading dislocation cores by forming Si -- N bonds, acting as a mask to locally prevent GaN growth. This behavior appeared to assist the initiation of the V-defect which enables V-defects to easily grow beyond the critical radius. Thus, introduction of indium surfactant and Si doping was found to be the most favorable conditions for V-defect formation in Ga-polar GaN films grown on Si-face SiC substrates. The nucleation and growth model predicted that V-defects may not form in homoepitaxy because the energy barrier for V-defect formation approaches infinity due to zero misfit stress. When indium surfactant and Si dopant were introduced simultaneously during the homoepitaxial growth, V-defects did not form in 1.8 microm thick Ga-polar GaN films grown at 950 °C on bulk GaN that had very low threading dislocation density, as predicted by the nucleation and growth model. Ga-polar GaN films grown on Si(111) substrates using indium surfactant showed that additional tensile stress was induced by indium with respect to the reference GaN. Since cracking is known to be a stress relaxation mechanism for tension, the In-induced additional tensile stress is thus detrimental to the GaN films which experience the tensile thermal stress associated with the difference in coefficient of thermal expansion between GaN and the substrate during cooling after growth. The generation of tensile stress by indium seemed correlated with a reduction of V-defects since a high density of V-defects formed under the initial compressive stress at the GaN nucleation stage and then V-defect density decreased as the film grew. Even though the initial misfit stress of the GaN film grown on Si(111) was lower than that of GaN grown on SiC, a high density of V-defects were created under the initial compressive stress. Therefore, the high density of threading dislocations was believed to strongly drive the V-defect formation under In-rich conditions. Consequently, without using high quality bulk GaN substrates, V-defects could not be avoided in Ga-polar GaN films grown on foreign substrates such as Si-face SiC and Si(111) in the presence of indium surfactant and Si dopants during growth. Thus, N-polar GaN films were investigated using vicinal C-face SiC substrates because a theoretical study utilizing first-principles calculations predicted that V-defects are not energetically favored on the N-face GaN. When indium surfactant and Si doping were used during N-polar GaN growth, V-defects did not form, as predicted by theory. This observation suggests that V-defect free N-polar InGaN alloys also can be achieved, which may enable stable green laser diodes with long lifetime to be fabricated using the high indium composition N-polar InGaN films. (Abstract shortened by UMI.)

Template synthesis of indium nanowires using anodic aluminum oxide membranes.

PubMed

Chen, Feng; Kitai, Adrian H

2008-09-01

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

Modifying Silicates for Better Dispersion in Nanocomposites

NASA Technical Reports Server (NTRS)

Campbell, Sandi

2005-01-01

An improved chemical modification has been developed to enhance the dispersion of layered silicate particles in the formulation of a polymer/silicate nanocomposite material. The modification involves, among other things, the co-exchange of an alkyl ammonium ion and a monoprotonated diamine with interlayer cations of the silicate. The net overall effects of the improved chemical modification are to improve processability of the nanocomposite and maximize the benefits of dispersing the silicate particles into the polymer. Some background discussion is necessary to give meaning to a description of this development. Polymer/silicate nanocomposites are also denoted polymer/clay composites because the silicate particles in them are typically derived from clay particles. Particles of clay comprise layers of silicate platelets separated by gaps called "galleries." The platelet thickness is 1 nm. The length varies from 30 nm to 1 m, depending on the silicate. In order to fully realize the benefits of polymer/silicate nanocomposites, it is necessary to ensure that the platelets become dispersed in the polymer matrices. Proper dispersion can impart physical and chemical properties that make nanocomposites attractive for a variety of applications. In order to achieve nanometer-level dispersion of a layered silicate into a polymer matrix, it is typically necessary to modify the interlayer silicate surfaces by attaching organic functional groups. This modification can be achieved easily by ion exchange between the interlayer metal cations found naturally in the silicate and protonated organic cations - typically protonated amines. Long-chain alkyl ammonium ions are commonly chosen as the ion-exchange materials because they effectively lower the surface energies of the silicates and ease the incorporation of organic monomers or polymers into the silicate galleries. This completes the background discussion. In the present improved modification of the interlayer silicate surfaces, the co-ion exchange strengthens the polymer/silicate interface and ensures irreversible separation of the silicate layers. One way in which it does this is to essentially tether one amine of each diamine molecule to a silicate surface, leaving the second amine free for reaction with monomers during the synthesis of a polymer. In addition, the incorporation of alkyl ammonium ions into the galleries at low concentration helps to keep low the melt viscosity of the oligomer formed during synthesis of the polymer and associated processing - a consideration that is particularly important in the case of a highly cross-linked, thermosetting polymer. Because of the chemical bonding between the surface-modifying amines and the monomers, even when the alkyl ammonium ions become degraded at high processing temperature, the silicate layers do not aggregate and, hence, nanometer-level dispersion is maintained.

Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

NASA Astrophysics Data System (ADS)

Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

2015-08-01

Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

Synthesis and Structural Characterization of Tris(dimethyldithicarbamate)Indium(III), In[S2CN(CH3)2]3

NASA Technical Reports Server (NTRS)

Clark, Eric B.; Breen, Marc L.; Fanwick, Phillip E.; Hepp, Aloysius F.; Duraj, Stan A.

1998-01-01

The synthesis and structure of the indium dithiocarbamate, In[S2CN(CH3)2]30 central dot 1/2 4- mepy (4-mepy = 4-methylpyridine), is described. Indium metal was oxidized by tetramethylthiuramdisulfide in 4-methylpyridine at 25 C to form a new, homoleptic indium(III) dithiocarbamate in yields exceeding 60%. In[S2CN(CH3)2]3 exists as a discrete molecule with a distorted-octahedral geometry. The compound crystallizes in the P 1-bar (No. 2) space group with a = 9.282(l) A, b = 10.081 (1) A, c, c = 12.502 A, alpha = 73.91 (1)(sup 0), beta = 70.21(1)(sup 0), gamma = 85.84(1)(sup 0), Z = 2, V (A(sup 3) = 1057.3(3), R = 0.046, and R(sub w) = 0.061.

Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshpande, Manisha, E-mail: manishauj@gmail.com; Department of Physics, Mithibai College, Vile Parle; Maske, Dilip

2016-05-06

Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS.more » The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.« less

Comparison of indium-labeled-leukocyte imaging with sequential technetium-gallium scanning in the diagnosis of low-grade musculoskeletal sepsis. A prospective study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merkel, K.D.; Brown, M.L.; Dewanjee, M.K.

We prospectively compared sequential technetium-gallium imaging with indium-labeled-leukocyte imaging in fifty patients with suspected low-grade musculoskeletal sepsis. Adequate images and follow-up examinations were obtained for forty-two patients. The presence or absence of low-grade sepsis was confirmed by histological and bacteriological examinations of tissue specimens taken at surgery in thirty of the forty-two patients. In these thirty patients, the sensitivity of sequential Tc-Ga imaging was 48 per cent, the specificity was 86 per cent, and the accuracy was 57 per cent, whereas the sensitivity of the indium-labeled-leukocyte technique was 83 per cent, the specificity was 86 per cent, and the accuracymore » was 83 per cent. When the additional twelve patients for whom surgery was deemed unnecessary were considered, the sensitivity of sequential Tc-Ga imaging was 50 per cent, the specificity was 78 per cent, and the accuracy was 62 per cent, as compared with a sensitivity of 83 per cent, a specificity of 94 per cent, and an accuracy of 88 per cent with the indium-labeled-leukocyte method. In patients with a prosthesis the indium-labeled-leukocyte image was 94 per cent accurate, compared with 75 per cent accuracy for sequential Tc-Ga imaging. Statistical analysis of these data demonstrated that the indium-labeled-leukocyte technique was superior to sequential Tc-Ga imaging in detecting areas of low-grade musculoskeletal sepsis.« less

Effects of the unintentional background concentration, indium composition and defect density on the performance of InGaN p-i-n homojunction solar cells

NASA Astrophysics Data System (ADS)

Wu, Shudong; Cheng, Liwen; Wang, Qiang

2018-07-01

We theoretically investigate the effects of the unintentional background concentration, indium composition and defect density of intrinsic layer (i-layer) on the photovoltaic performance of InGaN p-i-n homojunction solar cells by solving the Poisson and steady-state continuity equations. The built-in electric field and carrier generation rate depend on the position within the i-layer. The collection efficiency, short circuit current density, open circuit voltage, fill factor, and conversion efficiency are found to depend strongly on the background concentration, thickness, indium composition, and defect density of the i-layer. With increasing the background concentration, the maximum thickness of field-bearing i-layer decreases, and the width of depletion region may become even too small to cover the whole i-layer, resulting in a serious decrease of the carrier collection. Some oscillations as a function of indium composition are found in the short circuit current density and conversion efficiency at high indium composition and low defect density due to the interference between the absorbance and the generation rate of carriers. The defect density degrades seriously the overall photovoltaic performance, and its effect on the photovoltaic performance is roughly seven orders of magnitude higher than the previously reported values [Feng et al., J. Appl. Phys. 108 (2010) 093118]. As a result, the high crystalline quality InGaN with high indium composition is a key factor in the device performance of III-nitride based solar cells.

Application of Mythen detector: In-situ XRD study on the thermal expansion behavior of metal indium

NASA Astrophysics Data System (ADS)

Du, Rong; Chen, ZhongJun; Cai, Quan; Fu, JianLong; Gong, Yu; Wu, ZhongHua

2016-07-01

A Mythen detector has been equipped at the beamline 4B9A of Beijing Synchrotron Radiation Facility (BSRF), which is expected to enable BSRF to perform time-resolved measurement of X-ray diffraction (XRD) full-profiles. In this paper, the thermal expansion behavior of metal indium has been studied by using the in-situ XRD technique with the Mythen detector. The indium was heated from 303 to 433 K with a heating rate of 2 K/min. The in-situ XRD full-profiles were collected with a rate of one profile per 10 seconds. Rietveld refinement was used to extract the structural parameters. The results demonstrate that these collected quasi-real-time XRD profiles can be well used for structural analysis. The metal indium was found to have a nonlinear thermal expansion behavior from room temperature to the melting point (429.65 K). The a-axis of the tetragonal unit cell expands with a biquadratic dependency on temperature, while the c-axis contracts with a cubic dependency on temperature. By the time-resolved XRD measurements, it was observed that the [200] preferred orientation can maintain to about 403.15 K. While (110) is the last and detectable crystal plane just before melting of the polycrystalline indium foil. This study is not only beneficial to the application of metal indium, but also exhibits the capacity of in-situ time-resolved XRD measurements at the X-ray diffraction station of BSRF.

21 CFR 172.410 - Calcium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Calcium silicate. 172.410 Section 172.410 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.410 Calcium silicate. Calcium silicate, including synthetic calcium silicate, may be safely...

21 CFR 172.410 - Calcium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Calcium silicate. 172.410 Section 172.410 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.410 Calcium silicate. Calcium silicate, including synthetic calcium silicate, may be safely...

21 CFR 172.410 - Calcium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Calcium silicate. 172.410 Section 172.410 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.410 Calcium silicate. Calcium silicate, including synthetic calcium silicate, may be safely...

21 CFR 172.410 - Calcium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Calcium silicate. 172.410 Section 172.410 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.410 Calcium silicate. Calcium silicate, including synthetic calcium silicate, may be safely...

21 CFR 172.410 - Calcium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Calcium silicate. 172.410 Section 172.410 Food and... PERMITTED FOR DIRECT ADDITION TO FOOD FOR HUMAN CONSUMPTION Anticaking Agents § 172.410 Calcium silicate. Calcium silicate, including synthetic calcium silicate, may be safely used in food in accordance with the...

Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.

PubMed

Sheng, Jiazhen; Lee, Hwan-Jae; Oh, Saeroonter; Park, Jin-Seong

2016-12-14

Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H 2 O 2 ) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In 2 O 3 ) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In 2 O 3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 °C. We propose growth temperature-dependent surface reactions during the In 2 O 3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm 2 V -1 s -1 and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian; Schulze, Dirk

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetimemore » in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.« less

Biological and therapeutic effects of ortho-silicic acid and some ortho-silicic acid-releasing compounds: New perspectives for therapy.

PubMed

Jurkić, Lela Munjas; Cepanec, Ivica; Pavelić, Sandra Kraljević; Pavelić, Krešimir

2013-01-08

Silicon (Si) is the most abundant element present in the Earth's crust besides oxygen. However, the exact biological roles of silicon remain unknown. Moreover, the ortho-silicic acid (H4SiO4), as a major form of bioavailable silicon for both humans and animals, has not been given adequate attention so far. Silicon has already been associated with bone mineralization, collagen synthesis, skin, hair and nails health atherosclerosis, Alzheimer disease, immune system enhancement, and with some other disorders or pharmacological effects. Beside the ortho-silicic acid and its stabilized formulations such as choline chloride-stabilized ortho-silicic acid and sodium or potassium silicates (e.g. M2SiO3; M= Na,K), the most important sources that release ortho-silicic acid as a bioavailable form of silicon are: colloidal silicic acid (hydrated silica gel), silica gel (amorphous silicon dioxide), and zeolites. Although all these compounds are characterized by substantial water insolubility, they release small, but significant, equilibrium concentration of ortho-silicic acid (H4SiO4) in contact with water and physiological fluids. Even though certain pharmacological effects of these compounds might be attributed to specific structural characteristics that result in profound adsorption and absorption properties, they all exhibit similar pharmacological profiles readily comparable to ortho-silicic acid effects. The most unusual ortho-silicic acid-releasing agents are certain types of zeolites, a class of aluminosilicates with well described ion(cation)-exchange properties. Numerous biological activities of some types of zeolites documented so far might probably be attributable to the ortho-silicic acid-releasing property. In this review, we therefore discuss biological and potential therapeutic effects of ortho-silicic acid and ortho-silicic acid -releasing silicon compounds as its major natural sources.

Method 366.0 Determination of Dissolved Silicate in Estuarine and Coastal Watersby Gas Segmented Continuous Flow Colorimetric Analysis

EPA Science Inventory

This method provides a procedure for the determination of dissolved silicate concentration in estuarine and coastal waters. The dissolved silicate is mainly in the form of silicic acid, H SiO , in estuarine and 4 4 coastal waters. All soluble silicate, including colloidal silici...

Dependence of Strain Distribution on In Content in InGaN/GaN Quantum Wires and Spherical Quantum Dots

NASA Astrophysics Data System (ADS)

Sharma, Akant Sagar; Dhar, S.

2018-02-01

The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.

Low Pressure Synthesis of Indium Phosphide,

DTIC Science & Technology

1982-04-01

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Barrier Properties of Layered-Silicate Reinforced Ethylenepropylenediene Monomer/Chloroprene Rubber Nanorubbers.

PubMed

Wu, Chang Mou; Hsieh, Wen Yen; Cheng, Kuo Bin; Lai, Chiu-Chun; Lee, Kuei Chi

2018-05-09

The triacetin and nitroglycerin barrier properties of layered-silicate reinforced ethylenepropylenediene monomer/chloroprene rubber (EPDM/CR) nanorubbers were investigated as rocket-propellant inhibitors. EPDM/CR nanorubbers with intercalated structures were formulated and prepared by the melt-compounding method. The triacetin permeability and nitroglycerin absorption were observed to decrease with increasing layered-silicate content. The layered silicates also improved the flame retardancies of the nanorubbers by forming silicate reinforced carbonaceous chars. Layered-silicate reinforced EPDM/CR nanorubbers are potentially effective rocket propellant-inhibiting materials.

Raining a magma ocean: Thermodynamics of rocky planets after a giant impact

NASA Astrophysics Data System (ADS)

Stewart, S. T.; Lock, S. J.; Caracas, R.

2017-12-01

Rocky planets in exoplanetary systems have equilibrium temperatures up to a few 1000 K. The thermal evolution after a giant impact is sensitive to the equilibrium temperature. Post-impact rocky bodies are thermally stratified, with cooler, lower-entropy silicate overlain by vaporized, higher-entropy silicate. The radii of impact-vaporized rocky planets are much larger than the radii of equivalent condensed bodies. Furthermore, after some high-energy, high-angular momentum collisions, the post-impact body exceeds the corotation limit for a rocky planet and forms a synestia. Initially, volatiles and silicates are miscible at the high temperatures of the outer layer. If the equilibrium temperature with the star is lower than the silicate condensation temperature ( 2000 K), silicate droplets form at the photosphere and fall while volatile components remain in the vapor. Radiation and turbulent convection cool the vapor outer layer to the silicate vapor curve. A distinct magma ocean forms as the thermal profile crosses the silicate vapor curve and the critical curves for the volatiles. Near the temperatures and pressures of the critical curves, volatiles and silicates are partially soluble in each other. As the system continues cooling, the volatile vapor and silicate liquid separate toward the end member compositions, which are determined by the equilibrium temperature and the total vapor pressure of volatiles. If the equilibrium temperature with the star is near or above the condensation temperature for silicates, there would be limited condensation at the photosphere. Initially, the cooler lower mantle would slowly, diffusively equilibrate with the hotter upper mantle. In some cases, the thermal profile may cross the silicate vapor curve in the middle of the silicate layer, producing a silicate rain layer within the body. With continued evolution toward an adiabatic thermal profile, the body would separate into a silicate liquid layer underlying a silicate-volatile vapor layer. As the hottest rocky planets become tidally locked to their star, cooling progresses asymmetrically. The timing and degree of differentiation of rocky planets into silicate mantles and volatile atmospheres depends on the thermal evolution of vaporized rocky planets and may vary widely with equilibrium temperature.

Basic Operating Mode | Materials Science | NREL

Science.gov Websites

indium diselenide thin film, showing elemental maps of copper (left) and indium (right). CuInSe2 thin film. Cu and In elemental maps obtained by EDS. In its basic operating mode, scanning electron

Recalibration of indium foil for personnel screening in criticality accidents.

PubMed

Takada, C; Tsujimura, N; Mikami, S

2011-03-01

At the Nuclear Fuel Cycle Engineering Laboratories of the Japan Atomic Energy Agency (JAEA), small pieces of indium foil incorporated into personal dosemeters have been used for personnel screening in criticality accidents. Irradiation tests of the badges were performed using the SILENE reactor to verify the calibration of the indium activation that had been made in the 1980s and to recalibrate them for simulated criticalities that would be the most likely to occur in the solution process line. In addition, Monte Carlo calculations of the indium activation using the badge model were also made to complement the spectral dependence. The results lead to a screening level of 15 kcpm being determined that corresponds to a total dose of 0.25 Gy, which is also applicable in posterior-anterior exposure. The recalibration based on the latest study will provide a sounder basis for the screening procedure in the event of a criticality accident.

Evaluation of musculoskeletal sepsis with indium-111 white blood cell imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouzounian, T.J.; Thompson, L.; Grogan, T.J.

The detection of musculoskeletal sepsis, especially following joint replacement, continues to be a challenging problem. Often, even with invasive diagnostic evaluation, the diagnosis of infection remains uncertain. This is a report on the first 55 Indium-111 white blood cell (WBC) images performed in 39 patients for the evaluation of musculoskeletal sepsis. There were 40 negative and 15 positive Indium-111 WBC images. These were correlated with operative culture and tissue pathology, aspiration culture, and clinical findings. Thirty-eight images were performed for the evaluation of possible total joint sepsis (8 positive and 30 negative images); 17 for the evaluation of nonarthroplasty-related musculoskeletalmore » sepsis (7 positive and 10 negative images). Overall, there were 13 true-positive, 39 true-negative, two false-positive, and one false-negative images. Indium-111 WBC imaging is a sensitive and specific means of evaluating musculoskeletal sepsis, especially following total joint replacement.« less

Tin-polyimide and indium-polyimide thin-film composites as soft X-ray bandpass filters

NASA Technical Reports Server (NTRS)

Powell, Stephen F.; Allen, Maxwell J.; Willis, Thomas D.

1993-01-01

A tin-polyimide and an indium-polyimide soft X-ray bandpass filter were fabricated with thicknesses of 1400 and 1750 A for the metal and polyimide components, respectively. The transmission of each filter was measured at the Stanford Synchrotron Radiation Laboratory. The transmission of the tin-polyimide filter was found to be about 40 percent for radiation with wavelengths between 60 and 80 A. The transmission of the indium-polyimide filter was greater than 40 percent between 70 and 90 A. The indium was about 5 percent more transmissive than the tin and attained a maximum transmission of about 48 percent at 76 A. Such filters have potential applications to soft X-ray telescopes that operate in this region. They might also be of interest to investigators who work with X-ray microscopes that image live biological specimens in the 23-44-A water window.

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Brendan T.; Oleksak, Richard P.; Thevuthasan, Suntharampillai

A method to modulate the Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. The interfacial chemistries that modulate barrier heights for the Pt/a-IGZO system were investigated using in-situ X-ray photoelectron spectroscopy. A significant reduction of indium, from In3+ to In0, occurs during deposition of Pt on to the a-IGZO surface in ultra-high vacuum. Post-annealing and controlling the background ambient O2 pressure allows tuning the degree of indium reduction and the corresponding Schottky barrier height between 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries atmore » Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metalsemiconductor field-effect transistors.« less

High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuo; Ma, Ping, E-mail: maping@semi.ac.cn; Liu, Boting

2016-06-15

High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10{sup 10}Ω/sq in the light and 2 × 10{sup 11}Ω/sq in the dark when the in situ annealing temperature reached 970{sup ∘}C. The acquirement of high-resistive layers is attributed to the generation ofmore » indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.« less

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method,more » is proposed.« less

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Indium oxide inverse opal films synthesized by structure replication method

NASA Astrophysics Data System (ADS)

Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

2016-04-01

We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2015-02-07

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, andmore » therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs.« less

Mobility of indium on the ZnO(0001) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heinhold, R.; Reeves, R. J.; Allen, M. W.

2015-02-02

The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at ∼520 °C, with indium migrating from the (0001{sup ¯}) underside of the wafer, around the non-polar (11{sup ¯}00) and (112{sup ¯}0) sidewalls, to form a uniform self-organized (∼20 Å) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In{sub 2}O{sub 3} precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentionalmore » In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates.« less

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Brendan T.; Oleksak, Richard P.; Thevuthasan, Suntharampillai

A method to modulate the Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. The interfacial chemistries that modulate barrier heights for the Pt/a-IGZO system were investigated using in-situ X-ray photoelectron spectroscopy. A significant reduction of indium, from In 3+ to In 0, occurs during deposition of Pt on to the a-IGZO surface in ultra-high vacuum. Post-annealing and controlling the background ambient O 2 pressure allows tuning the degree of indium reduction and the corresponding Schottky barrier height between 0.17 to 0.77 eV. Understanding the detailedmore » interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metalsemiconductor field-effect transistors.« less

Effect of temperature on hydration kinetics and polymerization of tricalcium silicate in stirred suspensions of CaO-saturated solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grant, Steven A.; Boitnott, Ginger E.; Korhonen, Charles J.

2006-04-15

Tricalcium silicate was hydrated at 274, 278, 283, 298, and 313 K in stirred suspensions of saturated CaO solutions under a nitrogen-gas atmosphere until the end of deceleratory period. The suspension conductivities and energy flows were measured continuously. The individual reaction rates for tricalcium silicate dissolution, calcium silicate hydrate precipitation, and calcium hydroxide precipitation were calculated from these measurements. The results suggest that the proportion of tricalcium silicate dissolved was determined by the rate of tricalcium silicate dissolution and the time to very rapid calcium hydroxide precipitation. The time to very rapid calcium hydroxide precipitation was more sensitive to changesmore » in temperature than was the rate of tricalcium silicate dissolution, so that the proportion of tricalcium silicate hydration dissolved by the deceleratory period increased with decreasing temperature. The average chain length of the calcium silicate hydrate ascertained by magic-angle spinning nuclear magnetic resonance spectroscopy increased with increasing temperature.« less

Enhanced photo-catalytic activity of ordered mesoporous indium oxide nanocrystals in the conversion of CO2 into methanol.

PubMed

Gondal, M A; Dastageer, M A; Oloore, L E; Baig, U; Rashid, S G

2017-07-03

Ordered mesoporous indium oxide nanocrystal (m-In 2 O 3 ) was synthesized by nanocasting technique, in which highly ordered mesoporous silca (SBA-15) was used as structural matrix. X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) Brunauer-Emmett-Teller (BET) and Barrett-Joyner-Halanda (BJH) studies were carried out on m-In 2 O 3 and the results revealed that this material has a highly ordered mesoporous surface with reduced grain size, increased surface area and surface volume compared to the non porous indium oxide. The diffuse reluctance spectrum exhibited substantially improved light absorption efficiency in m-In 2 O 3 compared to normal indium oxide, however, no considerable change in the band gap energies of these materials was observed. When m-In 2 O 3 was used as a photo-catalyst in the photo-catalytic process of converting carbon dioxide (CO 2 ) into methanol under the pulsed laser radiation of 266-nm wavelengths, an enhanced photo-catalytic activity with the quantum efficiency of 4.5% and conversion efficiency of 46.3% were observed. It was found that the methanol production yield in this chemical process is as high as 485 µlg -1 h -1 after 150 min of irradiation, which is substantially higher than the yields reported in the literature. It is quite clear from the results that the introduction of mesoporosity in indium oxide, and the consequent enhancement of positive attributes required for a photo-catalyst, transformed photo-catalytically weak indium oxide into an effective photo-catalyst for the conversion of CO 2 into methanol.

Steam based conversion coating on AA6060 alloy: Effect of sodium silicate chemistry and corrosion performance

NASA Astrophysics Data System (ADS)

Din, Rameez Ud; Bordo, Kirill; Tabrizian, Naja; Jellesen, Morten Stendahl; Ambat, Rajan

2017-11-01

Surface treatment of aluminium alloy AA6060 using an industrially applicable pilot steam jet system with and without silicate chemistry has been investigated. Treatment using steam alone and steam with silicate, resulted in an oxide layer formation with thickness ∼425 nm and ∼160 nm, respectively. Moreover, the use of sodium silicate resulted in the formation of distinct microstructure and incorporation of silicate into the oxide film. These oxide films reduced the anodic activity 4 times, while the corrosion protection by silicate containing oxide was the function of its concentration. Further, in acid salt spray and filiform corrosion tests, oxide layer containing silicate exhibited two times higher corrosion resistance.

The nature, fabrication, and applications of photosensitive, bulk, germano-silicate glass

NASA Astrophysics Data System (ADS)

Heaney, Alan Douglas

2000-08-01

The photosensitive nature of germano-silicate glass is widely used to create fiber-optic devices. This thesis examines the cause of photosensitivity in germano- silicate glass. The results of this research elucidate the role that germanium oxygen deficient defects play in the photosensitivity of hydrogen-loaded, germano-silicate glass. We find that defects are not vital to the photosensitivity of hydrogen-loaded, germano-silicate glass but they do enhance the effect. Quantitative measurements show that germanium oxygen deficient defects promote the formation of OH, GeH, and GeH2 when hydrogen-loaded, germano-silicate glass is exposed to ultraviolet light. A sol-gel process for fabricating germano-silicate glass in bulk samples has been developed. The sol-gel process produces high-quality, germano-silicate glass which can be tailored to contain defects or be relatively free of defects. Control over the glass defect concentration allows us to use sol-gel derived glass for comparative studies of the photosensitive process and for device applications. The unique properties of germano-silicate glass make it a likely choice for use in optical applications. To prove the feasibility of bulk devices, chirped-pulse amplification is demonstrated using gratings written in bulk germano-silicate glass.

Indium-111 labeled anti-melanoma monoclonal antibodies

DOEpatents

Srivastava, S.C.; Fawwaz, R.A.; Ferrone, S.

1984-04-30

A monoclonal antibody to a high molecular weight melanoma-associated antigen was chelated and radiolabeled with indium-111. This material shows high affinity for melanoma and thus can be used in the detection, localization and imaging of melanoma. 1 figure.

Barrier Properties of Layered-Silicate Reinforced Ethylenepropylenediene Monomer/Chloroprene Rubber Nanorubbers

PubMed Central

Hsieh, Wen Yen; Cheng, Kuo Bin; Lai, Chiu-Chun; Lee, Kuei Chi

2018-01-01

The triacetin and nitroglycerin barrier properties of layered-silicate reinforced ethylenepropylenediene monomer/chloroprene rubber (EPDM/CR) nanorubbers were investigated as rocket-propellant inhibitors. EPDM/CR nanorubbers with intercalated structures were formulated and prepared by the melt-compounding method. The triacetin permeability and nitroglycerin absorption were observed to decrease with increasing layered-silicate content. The layered silicates also improved the flame retardancies of the nanorubbers by forming silicate reinforced carbonaceous chars. Layered-silicate reinforced EPDM/CR nanorubbers are potentially effective rocket propellant-inhibiting materials. PMID:29747427

Solubility of copper in silicate melts as function of oxygen and sulfur fugacities, temperature, and silicate composition

NASA Astrophysics Data System (ADS)

Holzheid, A.; Lodders, K.

2001-06-01

The solubility of Cu in silicate melts coexisting with liquid Cu(Fe) metal and liquid Cu(Fe) sulfide was determined experimentally at oxygen fugacities ranging from 10 -9.1 to 10 -13.6 bar and sulfur fugacities ranging from 10 -2.5 to 10 -6.3 bar at 1300°C. An iron oxide-free silicate of anorthite-diopside eutectic composition and a synthetic MgO-rich basaltic silicate (FeO-bearing) were used in the partitioning experiments. In S-containing systems, some of the metal reacted to metal sulfide. The silicates in the four systems investigated (Fe-free and S-free; Fe-containing and S-free; Fe-free and S-containing; Fe-containing and S-containing) had different colors depending on the dissolved Cu species and the presence of iron and/or sulfur. Irrespective of the presence of sulfur, the solubility of Cu in the silicate increases with increasing oxygen fugacity and metal/silicate partition coefficients for Cu decrease. Increasing the temperature from 1300°C to 1514°C increases the Cu solubility (decreases the metal/silicate partition coefficient) at an oxygen fugacity 0.5 log units below the iron-wüstite (IW) equilibrium in the Fe-free, S-free and Fe-containing, S-free systems. We infer the presence of monovalent Cu + ("CuO 0.5") in the silicate melt on the basis of the solubility of Cu as function of oxygen fugacity. Experiments containing iron yield a formal valence of ˜0.5 for Cu at very low oxygen fugacities, which is not observed in Fe-free systems. The low formal valence is explained by redox reactions between iron and copper in the silicate melts. There is no evidence for sulfidic dissolution of Cu in the silicates but sulfur has indirect effects on Cu partitioning. Iron metal/silicate partition coefficients depend on oxygen fugacity and on sulfur fugacity. Sulfidic dissolution of iron and oxide-sulfide exchange reactions with Cu cause a small increase in Cu metal/silicate partition coefficients. We derive an activity coefficient (γ CuO 0.5) of 10 ± 1 for liquid CuO 0.5 at 1300°C for the silicate melts used here. A comparison with literature data shows that log γ CuO 0.5 increases in proportion to the mass percentages [CaO +(Al 2O 3)/2] in silicate melts. We recommend the following equations for Cu metal/silicate and sulfide/silicate partitioning for geochemical and cosmochemical modeling if silicate composition and the activity of Cu in the metal or sulfide is known: log D met/sil = -0.48 - 0.25 · log fO 2 - log γ Cu metal + 0.02 · [CaO + (Al 2O 3)/2; wt%] silicate logD sul/sil=+0.76-0.25 · logfO 2+0.25logfS 2-logγ CS 0.5,sulfide +0.02 · [CaO+Al 2O 3/2;wt%] silicate. The derived Cu metal/silicate and metal/sulfide partition coefficients are applied to core formation in the Earth and Mars. The observed Cu abundances in the Earth cannot be easily explained by simple core-mantle equilibrium, but the observed Cu abundances for Mars are consistent with core-mantle equilibrium at low pressure and temperatures.

INDIUM AND ZINC MEDIATED ONE-ATOM CARBOCYCLE ENLARGEMENT IN WATER. (R822668)

EPA Science Inventory

Abstract

Six-, seven-, eight-membered rings are enlarged by one carbon-atom into seven-, eight- and nine-membered ring derivatives respectively, via indium or zinc mediated reactions in aqueous medium.

Atmospheric Deposition of Indium in the Northeastern United States: Flux and Historical Trends.

PubMed

White, Sarah Jane O; Keach, Carrie; Hemond, Harold F

2015-11-03

The metal indium is an example of an increasingly important material used in electronics and new energy technologies, whose environmental behavior and toxicity are poorly understood despite increasing evidence of detrimental health impacts and human-induced releases to the environment. In the present work, the history of indium deposition from the atmosphere is reconstructed from its depositional record in an ombrotrophic bog in Massachusetts. A novel freeze-coring technique is used to overcome coring difficulties posed by woody roots and peat compressibility, enabling retrieval of relatively undisturbed peat cores dating back more than a century. Results indicate that long-range atmospheric transport is a significant pathway for the transport of indium, with peak concentrations of 69 ppb and peak fluxes of 1.9 ng/cm2/yr. Atmospheric deposition to the bog began increasing in the late 1800s/early 1900s, and peaked in the early 1970s. A comparison of deposition data with industrial production and emissions estimates suggests that both coal combustion and the smelting of lead, zinc, copper, and tin sulfides are sources of indium to the atmosphere in this region. Deposition appears to have decreased considerably since the 1970s, potentially a visible effect of particulate emissions controls instated in North America during that decade.

Indium-mediated asymmetric barbier-type allylations: additions to aldehydes and ketones and mechanistic investigation of the organoindium reagents.

PubMed

Haddad, Terra D; Hirayama, Lacie C; Singaram, Bakthan

2010-02-05

We report a simple, efficient, and general method for the indium-mediated enantioselective allylation of aromatic and aliphatic aldehydes and ketones under Barbier-type conditions in a one-pot synthesis affording the corresponding chiral alcohol products in very good yield (up to 99%) and enantiomeric excess (up to 93%). Our method is able to tolerate various functional groups, such as esters, nitriles, and phenols. Additionally, more substituted allyl bromides, such as crotyl and cinnamyl bromide, can be used providing moderate enantioselectivity (72% and 56%, respectively) and excellent diastereoselectivity when employing cinnamyl bromide (>95/5 anti/syn). However, the distereoselectivity when using crotyl bromide was poor and other functionalized allyl bromides under our method afforded low enantioselectivities for the alcohol products. In these types of indium-mediated additions, solvent plays a major role in determining the nature of the organoindium intermediate and we observed the susceptibility of some allylindium intermediates to hydrolysis in protic solvents. Under our reaction conditions using a polar aprotic solvent, we suggest that an allylindium(III) species is the active allylating intermediate. In addition, we have observed the presence of a shiny, indium(0) nugget throughout the reaction, irrespective of the stoichiometry, indicating disproportionation of indium halide byproduct formed during the reaction.

EFFECT OF SILICATE ON GRAM STAINING AND VIABILITY OF PNEUMOCOCCI AND OTHER BACTERIA

PubMed Central

MacLeod, Colin M.; Roe, Amy S.

1956-01-01

Application of silicate solutions to living or heat-killed pneumococci and to certain "viridans" streptococci causes their conversion from a Gram-positive to a Gram-negative state. The original staining properties can be restored by suspending the silicate-treated bacteria in alkaline solutions of various salts but not by simple washing in water. Living pneumococci and the strains of streptococci whose staining properties are similarly affected are killed when suspended in silicate solutions. In other Gram-positive species silicate causes conversion to Gram negativity but restoration to positivity occurs upon washing in water. In a third group of Gram-positive organisms silicate has no effect on the Gram reaction. The viability of organisms in these two groups is unaffected by silicate under the conditions employed. No effect on staining or viability of Gram-negative bacteria has been observed. The effects of silicate on staining and viability are inhibited by nutrient broth or whole serum but not by purified serum albumin. Lecithin, choline, and other substituted ammonium compounds also inhibit the effects of silicate on pneumococci. PMID:13306854

The effect of thermal and organic additive in morphology of ceramic based silicate

NASA Astrophysics Data System (ADS)

Ginting, J.; Bangun, N.; Sembiring, H. Br; Putri, N. K.

2017-04-01

M-Silicate (M = Mg, Ca) has been prepared by exchange metal reaction from M-Chloride salts and sodium silicate. The resulting white solid of chloride salts then heated at 700, 800, 900 and 1000 °C. Due to increase the porosity of M-Silicate, 1,2-propanediol, oleic acid and glycerol were added, then formed M-silicates were heated at 800 °C. Then, obtained white solid M-Silicates were characterized by Scanning Electron Microscopy (SEM). SEM images show the variance of surface morphology when the temperature increases. The addition of organic compounds is involved in surface modification.

The utilization of waste by-products for removing silicate from mineral processing wastewater via chemical precipitation.

PubMed

Kang, Jianhua; Sun, Wei; Hu, Yuehua; Gao, Zhiyong; Liu, Runqing; Zhang, Qingpeng; Liu, Hang; Meng, Xiangsong

2017-11-15

This study investigates an environmentally friendly technology that utilizes waste by-products (waste acid and waste alkali liquids) to treat mineral processing wastewater. Chemical precipitation is used to remove silicate from scheelite (CaWO 4 ) cleaning flotation wastewater and the waste by-products are used as a substitute for calcium chloride (CaCl 2 ). A series of laboratory experiments is conducted to explain the removal of silicate and the characterization and formation mechanism of calcium silicate. The results show that silicate removal reaches 90% when the Ca:Si molar ratio exceeds 1.0. The X-ray diffraction (XRD) results confirm the characterization and formation of calcium silicate. The pH is the key factor for silicate removal, and the formation of polysilicic acid with a reduction of pH can effectively improve the silicate removal and reduce the usage of calcium. The economic analysis shows that the treatment costs with waste acid (0.63 $/m 3 ) and waste alkali (1.54 $/m 3 ) are lower than that of calcium chloride (2.38 $/m 3 ). The efficient removal of silicate is confirmed by industrial testing at a plant. The results show that silicate removal reaches 85% in the recycled water from tailings dam. Copyright © 2017 Elsevier Ltd. All rights reserved.

Argillization by descending acid at Steamboat Springs, Nevada

USGS Publications Warehouse

Schoen, Robert; White, Donald E.; Hemley, J.J.

1974-01-01

Steamboat Springs, Nevada, an area of present-day hot springs, clearly illustrates the genetic dependence of some kaolin deposits on hot-spring activity. Andesite, granodiorite and arkosic sediments are locally altered at the land surface to siliceous residues consisting of primary quartz and anatase, plus opal from primary silicates. These siliceous residues commonly exhibit the textural and structural features of their unaltered equivalents. Beneath the siliceous residues, kaolin and alunite replace primary silicates and fill open spaces, forming a blanketlike deposit. Beneath the kaolin-alunite zone, montmorillonite, commonly accompanied by pyrite, replaces the primary silicates. On the ground surface, the same alteration mineral zones can be traced outward from the siliceous residue; however, hematite rather than pyrite accompanies montmorillonite.Chemical analysis indicates that sulfuric acid is the active altering agent. The acid forms from hydrogen sulfide that exsolves from deep thermal water, rises above the water table and is oxidized by sulfur-oxidizing bacteria living near the ground surface. This acid dissolves in precipitation or condensed water vapor and percolates downward destroying most of the primary minerals producing a siliceous residue. Coincidence of the water table with the downward transition from siliceous residue to kaolin-alunite signifies decreasing hydrogen metasomatism because of dilution of descending acid by ground water.In hot-spring areas, beds of siliceous sinter deposited at the surface by hypogene thermal water look, superficially, like areas of surficial acid alteration. Features diagnostic of a surficial alteration are the relict rock structures of a siliceous residue and a kaolin-alunite zone immediately beneath.

Influence of Silicate Melt Composition on Metal/Silicate Partitioning of W, Ge, Ga and Ni

NASA Technical Reports Server (NTRS)

Singletary, S. J.; Domanik, K.; Drake, M. J.

2005-01-01

The depletion of the siderophile elements in the Earth's upper mantle relative to the chondritic meteorites is a geochemical imprint of core segregation. Therefore, metal/silicate partition coefficients (Dm/s) for siderophile elements are essential to investigations of core formation when used in conjunction with the pattern of elemental abundances in the Earth's mantle. The partitioning of siderophile elements is controlled by temperature, pressure, oxygen fugacity, and by the compositions of the metal and silicate phases. Several recent studies have shown the importance of silicate melt composition on the partitioning of siderophile elements between silicate and metallic liquids. It has been demonstrated that many elements display increased solubility in less polymerized (mafic) melts. However, the importance of silicate melt composition was believed to be minor compared to the influence of oxygen fugacity until studies showed that melt composition is an important factor at high pressures and temperatures. It was found that melt composition is also important for partitioning of high valency siderophile elements. Atmospheric experiments were conducted, varying only silicate melt composition, to assess the importance of silicate melt composition for the partitioning of W, Co and Ga and found that the valence of the dissolving species plays an important role in determining the effect of composition on solubility. In this study, we extend the data set to higher pressures and investigate the role of silicate melt composition on the partitioning of the siderophile elements W, Ge, Ga and Ni between metallic and silicate liquid.

Tableting properties of silica aerogel and other silicates.

PubMed

Hentzschel, C M; Alnaief, M; Smirnova, I; Sakmann, A; Leopold, C S

2012-04-01

In solid oral dosage forms silicates are commonly used as glidants in low concentration. However, due to their large specific surface area, silicates may also be used as carrier materials for drugs. Moreover, silicates allow amorphisation of drugs by co-grinding or processing with supercritical fluids. The aim of this study was to investigate the physical and the tableting properties of Silica Aerogel (special type of silica with an extremely large specific surface area), Neusilin(®) US2 (magnesium aluminometasilicate), Florite(®) (calcium silicate) and Aerosil(®) 200 (colloidal silica). Powder blends of Avicel(®) PH102 (microcrystalline cellulose) and different amounts of the respective silicate were compacted and analyzed for their tabletability (tensile strength vs. compaction pressure) as well as their Heckel plot. With Neusilin(®) the tabletability appeared to be independent of the silicate concentration, whereas with Florite(®) an increasing silicate concentration led to a higher tensile strength. In contrast, the addition of Silica Aerogel and Aerosil(®) resulted in a decrease of the tensile strength. With Aerosil(®) a maximum tolerable concentration of 20% [w/w] was determined. Plastic deformation of all powder blends decreased with increasing silicate concentration. This effect was most pronounced with Aerosil(®) and least with Florite(®). Tablets with acceptable tensile strength were obtained with all plain silicates except for Aerosil(®). Therefore, these silicates may be used in tablet formulations, e.g. as carrier materials for liquid or amorphous drugs.

Regularities in Low-Temperature Phosphatization of Silicates

NASA Astrophysics Data System (ADS)

Savenko, A. V.

2018-01-01

The regularities in low-temperature phosphatization of silicates are defined from long-term experiments on the interaction between different silicate minerals and phosphate-bearing solutions in a wide range of medium acidity. It is shown that the parameters of the reaction of phosphatization of hornblende, orthoclase, and labradorite have the same values as for clayey minerals (kaolinite and montmorillonite). This effect may appear, if phosphotization proceeds, not after silicate minerals with a different structure and composition, but after a secondary silicate phase formed upon interaction between silicates and water and stable in a certain pH range. Variation in the parameters of the reaction of phosphatization at pH ≈ 1.8 is due to the stability of the silicate phase different from that at higher pH values.

Leaching of indium from obsolete liquid crystal displays: Comparing grinding with electrical disintegration in context of LCA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dodbiba, Gjergj, E-mail: dodbiba@sys.t.u-tokyo.ac.jp; Nagai, Hiroki; Wang Lipang

2012-10-15

Highlights: Black-Right-Pointing-Pointer Two pre-treatment methods, prior to leaching of indium from obsolete LCD modules, were described. Black-Right-Pointing-Pointer Conventional grinding and electrical disintegration have been evaluated and compared in the context of LCA. Black-Right-Pointing-Pointer Experimental data on the leaching capacity for indium and the electricity consumption of equipment were inputted into the LCA model in order to compare the environmental performance of each method. Black-Right-Pointing-Pointer An estimate for the environmental performance was calculated as the sum of six impact categories. Black-Right-Pointing-Pointer Electrical disintegration method outperforms conventional grinding in all impact categories. - Abstract: In order to develop an effective recycling systemmore » for obsolete Liquid Crystal Displays (LCDs), which would enable both the leaching of indium (In) and the recovery of a pure glass fraction for recycling, an effective liberation or size-reduction method would be an important pre-treatment step. Therefore, in this study, two different types of liberation methods: (1) conventional grinding, and (2) electrical disintegration have been tested and evaluated in the context of Life Cycle Assessment (LCA). In other words, the above-mentioned methods were compared in order to find out the one that ensures the highest leaching capacity for indium, as well as the lowest environmental burden. One of the main findings of this study was that the electrical disintegration was the most effective liberation method, since it fully liberated the indium containing-layer, ensuring a leaching capacity of 968.5 mg-In/kg-LCD. In turn, the estimate for the environmental burden was approximately five times smaller when compared with the conventional grinding.« less

Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Das, Rupali; Soni, R. K.

2018-05-01

Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate exogenous contrast agent for efficient Raman spectroscopy from molecules.

Plasma Treatment to Remove Carbon from Indium UV Filters

NASA Technical Reports Server (NTRS)

Greer, Harold F.; Nikzad, Shouleh; Beasley, Matthew; Gantner, Brennan

2012-01-01

The sounding rocket experiment FIRE (Far-ultraviolet Imaging Rocket Experiment) will improve the science community fs ability to image a spectral region hitherto unexplored astronomically. The imaging band of FIRE (.900 to 1,100 Angstroms) will help fill the current wavelength imaging observation hole existing from approximately equal to 620 Angstroms to the GALEX band near 1,350 Angstroms. FIRE is a single-optic prime focus telescope with a 1.75-m focal length. The bandpass of 900 to 1100 Angstroms is set by a combination of the mirror coating, the indium filter in front of the detector, and the salt coating on the front of the detector fs microchannel plates. Critical to this is the indium filter that must reduce the flux from Lymanalpha at 1,216 Angstroms by a minimum factor of 10(exp -4). The cost of this Lyman-alpha removal is that the filter is not fully transparent at the desired wavelengths of 900 to 1,100 Angstroms. Recently, in a project to improve the performance of optical and solar blind detectors, JPL developed a plasma process capable of removing carbon contamination from indium metal. In this work, a low-power, low-temperature hydrogen plasma reacts with the carbon contaminants in the indium to form methane, but leaves the indium metal surface undisturbed. This process was recently tested in a proof-of-concept experiment with a filter provided by the University of Colorado. This initial test on a test filter showed improvement in transmission from 7 to 9 percent near 900 with no process optimization applied. Further improvements in this performance were readily achieved to bring the total transmission to 12% with optimization to JPL's existing process.

21 CFR 582.2437 - Magnesium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Magnesium silicate. 582.2437 Section 582.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 582.2437 - Magnesium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Magnesium silicate. 582.2437 Section 582.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 582.2437 - Magnesium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Magnesium silicate. 582.2437 Section 582.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 582.2437 - Magnesium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Magnesium silicate. 582.2437 Section 582.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 582.2437 - Magnesium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Magnesium silicate. 582.2437 Section 582.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

Influence of the type of aqueous sodium silicate on the stabilization and rheology of kaolin clay suspensions

NASA Astrophysics Data System (ADS)

Izak, Piotr; Ogłaza, Longin; Mozgawa, Włodzimierz; Mastalska-Popławska, Joanna; Stempkowska, Agata

2018-05-01

To avoid agglomeration and sedimentation of grains, ceramic slurries should be modified by stabilizers in order to increase the electrostatic interactions between the dispersed particles. In this study we present the spectral analysis of aqueous sodium silicates obtained by different synthesis methods and their influence on the rheological properties of kaolin based slurries. Infrared and Raman spectra can be used to describe the structure of silicate structural units present in aqueous sodium silicates. It was confirmed that the best stabilization results possess aqueous sodium silicates of the silicate moduli of about 2 and the optimal concentration of the used fluidizer is 0.3 wt% to the kaolin clay dry mass. One of the most important conclusions is that the synthesis method of the fluidizer has no significant effect on its stabilization properties but used medium does create adequate stabilization mechanism depending on the silicate structures present in the sodium silicate solution.

SILICATE COMPOSITION OF THE INTERSTELLAR MEDIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fogerty, S.; Forrest, W.; Watson, D. M.

2016-10-20

The composition of silicate dust in the diffuse interstellar medium and in protoplanetary disks around young stars informs our understanding of the processing and evolution of the dust grains leading up to planet formation. An analysis of the well-known 9.7 μ m feature indicates that small amorphous silicate grains represent a significant fraction of interstellar dust and are also major components of protoplanetary disks. However, this feature is typically modeled assuming amorphous silicate dust of olivine and pyroxene stoichiometries. Here, we analyze interstellar dust with models of silicate dust that include non-stoichiometric amorphous silicate grains. Modeling the optical depth alongmore » lines of sight toward the extinguished objects Cyg OB2 No. 12 and ζ Ophiuchi, we find evidence for interstellar amorphous silicate dust with stoichiometry intermediate between olivine and pyroxene, which we simply refer to as “polivene.” Finally, we compare these results to models of silicate emission from the Trapezium and protoplanetary disks in Taurus.« less

Visible light electroluminescent diodes of indium-gallium phosphide

NASA Technical Reports Server (NTRS)

Clough, R.; Richman, D.; Tietjen, J.

1970-01-01

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt-Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy.

PubMed

Flynn, Brendan T; Oleksak, Richard P; Thevuthasan, Suntharampillai; Herman, Gregory S

2018-01-31

A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In 3+ to In 0 , that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O 2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

NASA Astrophysics Data System (ADS)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

NASA Astrophysics Data System (ADS)

Fischer, A. M.; Wei, Y. O.; Ponce, F. A.; Moseley, M.; Gunning, B.; Doolittle, W. A.

2013-09-01

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ˜ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ˜ 0.6. Surprisingly, the InxGa1-xN film with x ˜ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (˜400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

Sensitive elemental detection using microwave-assisted laser-induced breakdown imaging

NASA Astrophysics Data System (ADS)

Iqbal, Adeel; Sun, Zhiwei; Wall, Matthew; Alwahabi, Zeyad T.

2017-10-01

This study reports a sensitive spectroscopic method for quantitative elemental detection by manipulating the temporal and spatial parameters of laser-induced plasma. The method was tested for indium detection in solid samples, in which laser ablation was used to generate a tiny plasma. The lifetime of the laser-induced plasma can be extended to hundreds of microseconds using microwave injection to remobilize the electrons. In this novel method, temporal integrated signal of indium emission was significantly enhanced. Meanwhile, the projected detectable area of the excited indium atoms was also significantly improved using an interference-, instead of diffraction-, based technique, achieved by directly imaging microwave-enhanced plasma through a novel narrow-bandpass filter, exactly centered at the indium emission line. Quantitative laser-induce breakdown spectroscopy was also recorded simultaneously with the new imaging method. The intensities recorded from both methods exhibit very good mutual linear relationship. The detection intensity was improved to 14-folds because of the combined improvements in the plasma lifetime and the area of detection.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Mechanism of laser induced fluorescence signal generation in InCl3-ethanol mixture flames

NASA Astrophysics Data System (ADS)

Fang, Bolang; Hu, Zhiyun; Zhang, Zhenrong; Li, Guohua; Shao, Jun; Feng, Guobin

2017-05-01

Nonlinear regime Two-line Atomic Fluorescence (NTLAF) is a promising technique for two-dimensional thermometry. A key challenge is seeding of indium atoms into flame. This work aims at investigating the mechanism of Indium LIF signal generation in a fuel-rich InCl3-ethanol premixed flame. Several types of images including natural emission of the flame itself, natural emission of CH, natural emission of OH, natural emission at 410 nm/451 nm of indium atom, and laser induced fluorescence at 410 nm/451 nm were obtained. The indium atom was generated in the flame front, and could survive in the post-flame zone for a while which is benefit for making NTLAF measurements. Further detail mechanism of fluorescence signals generation in InCl3-ethanol solution burning was investigated. The conclusion which probable to be drew is that to gain high NTLAF signals, the size of liquid droplets should be well controlled, neither to be too large nor to be gasified.

Indium-saving effect and physical properties of transparent conductive multilayers

NASA Astrophysics Data System (ADS)

Kawamura, M.; Kiba, T.; Abe, Y.; Kim, K. H.

2018-03-01

Indium-free transparent conductive multilayer structures consisting of top and bottom MoO3 layers and an Ag interlayer (MoO3/Ag/MoO3; MAM) are deposited onto glass substrates by vacuum evaporation. The transmittance and sheet resistance of the structures are evaluated, and the optimum structure is determined to be MAM (20/14/30 nm) as it shows the best figure of merit (FOM), which is used as the index for transparent conductive films, with a value of 6.2 × 10-3 Ω-1. To further improve the performance of the films, we attempt to fabricate a multilayer consisting of MoO3 and indium zinc oxide (IZO), based on previous results. The obtained IAM (30/14/50 nm) multilayer shows an FOM higher than that of the MAM, with a value of 32 × 10-3 Ω-1. Moreover, it reduces the amount of required indium as compared with the IZO/Ag/IZO multilayer.

Technological process and optimum design of organic materials vacuum pyrolysis and indium chlorinated separation from waste liquid crystal display panels.

PubMed

Ma, En; Xu, Zhenming

2013-12-15

In this study, a technology process including vacuum pyrolysis and vacuum chlorinated separation was proposed to convert waste liquid crystal display (LCD) panels into useful resources using self-design apparatuses. The suitable pyrolysis temperature and pressure are determined as 300°C and 50 Pa at first. The organic parts of the panels were converted to oil (79.10 wt%) and gas (2.93 wt%). Then the technology of separating indium was optimized by central composite design (CCD) under response surface methodology (RSM). The results indicated the indium recovery ratio was 99.97% when the particle size is less than 0.16 mm, the weight percentage of NH4Cl to glass powder is 50 wt% and temperature is 450°C. The research results show that the organic materials, indium and glass of LCD panel can be recovered during the recovery process efficiently and eco-friendly. Copyright © 2013 Elsevier B.V. All rights reserved.

Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films

NASA Astrophysics Data System (ADS)

Prozheeva, V.; Hölldobler, R.; von Wenckstern, H.; Grundmann, M.; Tuomisto, F.

2018-03-01

Various nominally undoped and Si-doped (InxGa1-x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.

40 CFR 721.9513 - Modified magnesium silicate polymer (generic).

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Modified magnesium silicate polymer... Specific Chemical Substances § 721.9513 Modified magnesium silicate polymer (generic). (a) Chemical... as modified magnesium silicate polymer (PMN P-98-604) is subject to reporting under this section for...

40 CFR 721.9513 - Modified magnesium silicate polymer (generic).

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Modified magnesium silicate polymer... Specific Chemical Substances § 721.9513 Modified magnesium silicate polymer (generic). (a) Chemical... as modified magnesium silicate polymer (PMN P-98-604) is subject to reporting under this section for...

21 CFR 182.2437 - Magnesium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Magnesium silicate. 182.2437 Section 182.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 182.2437 - Magnesium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Magnesium silicate. 182.2437 Section 182.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 182.2437 - Magnesium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Magnesium silicate. 182.2437 Section 182.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 182.2437 - Magnesium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Magnesium silicate. 182.2437 Section 182.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Magnesium silicate. (a) Product. Magnesium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions...

21 CFR 182.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Aluminum calcium silicate. 182.2122 Section 182.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 182.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Aluminum calcium silicate. 182.2122 Section 182.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 582.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Aluminum calcium silicate. 582.2122 Section 582.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 582.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Aluminum calcium silicate. 582.2122 Section 582.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 582.2227 - Calcium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Calcium silicate. 582.2227 Section 582.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

21 CFR 582.2227 - Calcium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 6 2011-04-01 2011-04-01 false Calcium silicate. 582.2227 Section 582.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

40 CFR 721.9513 - Modified magnesium silicate polymer (generic).

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Modified magnesium silicate polymer... Specific Chemical Substances § 721.9513 Modified magnesium silicate polymer (generic). (a) Chemical... as modified magnesium silicate polymer (PMN P-98-604) is subject to reporting under this section for...

40 CFR 721.9513 - Modified magnesium silicate polymer (generic).

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Modified magnesium silicate polymer... Specific Chemical Substances § 721.9513 Modified magnesium silicate polymer (generic). (a) Chemical... as modified magnesium silicate polymer (PMN P-98-604) is subject to reporting under this section for...

40 CFR 721.9513 - Modified magnesium silicate polymer (generic).

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Modified magnesium silicate polymer... Specific Chemical Substances § 721.9513 Modified magnesium silicate polymer (generic). (a) Chemical... as modified magnesium silicate polymer (PMN P-98-604) is subject to reporting under this section for...

21 CFR 582.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Aluminum calcium silicate. 582.2122 Section 582.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 582.2227 - Calcium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Calcium silicate. 582.2227 Section 582.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

21 CFR 182.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Aluminum calcium silicate. 182.2122 Section 182.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 582.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 6 2014-04-01 2014-04-01 false Aluminum calcium silicate. 582.2122 Section 582.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 582.2227 - Calcium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 6 2012-04-01 2012-04-01 false Calcium silicate. 582.2227 Section 582.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

21 CFR 582.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Aluminum calcium silicate. 582.2122 Section 582.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

21 CFR 182.2227 - Calcium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Calcium silicate. 182.2227 Section 182.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Anticaking Agents § 182.2227 Calcium silicate. (a) Product. Calcium silicate...

21 CFR 582.2227 - Calcium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 6 2013-04-01 2013-04-01 false Calcium silicate. 582.2227 Section 582.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

21 CFR 182.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Aluminum calcium silicate. 182.2122 Section 182...) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Anticaking Agents § 182.2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c) Limitations, restrictions, or explanation. This...

21 CFR 182.2122 - Aluminum calcium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Aluminum calcium silicate. 182.2122 Section 182.2122 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED....2122 Aluminum calcium silicate. (a) Product. Aluminum calcium silicate. (b) Tolerance. 2 percent. (c...

Corrosion resistant thermal barrier coating. [protecting gas turbines and other engine parts

NASA Technical Reports Server (NTRS)

Levine, S. R.; Miller, R. A.; Hodge, P. E. (Inventor)

1981-01-01

A thermal barrier coating system for protecting metal surfaces at high temperature in normally corrosive environments is described. The thermal barrier coating system includes a metal alloy bond coating, the alloy containing nickel, cobalt, iron, or a combination of these metals. The system further includes a corrosion resistant thermal barrier oxide coating containing at least one alkaline earth silicate. The preferred oxides are calcium silicate, barium silicate, magnesium silicate, or combinations of these silicates.

Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Costen, Nick; Allen, Christine

2007-01-01

This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

PERSONNEL NEUTRON DOSIMETER

DOEpatents

Fitzgerald, J.J.; Detwiler, C.G. Jr.

1960-05-24

A description is given of a personnel neutron dosimeter capable of indicating the complete spectrum of the neutron dose received as well as the dose for each neutron energy range therein. The device consists of three sets of indium foils supported in an aluminum case. The first set consists of three foils of indium, the second set consists of a similar set of indium foils sandwiched between layers of cadmium, whereas the third set is similar to the second set but is sandwiched between layers of polyethylene. By analysis of all the foils the neutron spectrum and the total dose from neutrons of all energy levels can be ascertained.

Pulmonary uptake in Indium-111 leukocyte imaging: clinical significance in patients with suspected occult infections

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cook, P.S.; Datz, F.L.; Disbro, M.A.

1984-02-01

A retrospective review was undertaken to evaluate the frequency and significance of pulmonary activity noted on 306 indium-111 leukocyte studies involving 232 patients with suspected occult infections. Forty-eight studies showed pulmonary activity in one of two patterns of uptake, focal or diffuse. Fourteen of 27 studies (52%) with focal uptake and two of 21 studies (10%) with diffuse uptake were associated with infectious processes. Lung uptake of indium-111-labeled leukocytes was a poor predictor of pulmonary infection in patients studied for occult infection, although the focal pattern was more likely than the diffuse pattern to be associated with infection.

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

NASA Astrophysics Data System (ADS)

Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel; Doolittle, W. Alan

2010-11-01

The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.

Diode laser-based thermometry using two-line atomic fluorescence of indium and gallium

NASA Astrophysics Data System (ADS)

Borggren, Jesper; Weng, Wubin; Hosseinnia, Ali; Bengtsson, Per-Erik; Aldén, Marcus; Li, Zhongshan

2017-12-01

A robust and relatively compact calibration-free thermometric technique using diode lasers two-line atomic fluorescence (TLAF) for reactive flows at atmospheric pressures is investigated. TLAF temperature measurements were conducted using indium and, for the first time, gallium atoms as temperature markers. The temperature was measured in a multi-jet burner running methane/air flames providing variable temperatures ranging from 1600 to 2000 K. Indium and gallium were found to provide a similar accuracy of 2.7% and precision of 1% over the measured temperature range. The reliability of the TLAF thermometry was further tested by performing simultaneous rotational CARS measurements in the same experiments.

Reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel and tin**

PubMed Central

Assael, Marc J.; Chatzimichailidis, Arsenios; Antoniadis, Konstantinos D.; Wakeham, William A.; Huber, Marcia L.; Fukuyama, Hiroyuki

2017-01-01

The available experimental data for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin has been critically examined with the intention of establishing thermal conductivity reference correlations. All experimental data have been categorized into primary and secondary data according to the quality of measurement specified by a series of criteria. The proposed standard reference correlations for the thermal conductivity of liquid copper, gallium, indium, iron, lead, nickel, and tin are respectively characterized by uncertainties of 9.8, 15.9, 9.7, 13.7, 16.9, 7.7, and 12.6% at the 95% confidence level. PMID:29353915

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

NASA Astrophysics Data System (ADS)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Strained quantum well photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

1998-01-01

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

DOEpatents

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Metal-silicate interaction in quenched shock-induced melt of the Tenham L6-chondrite

NASA Astrophysics Data System (ADS)

Leroux, Hugues; Doukhan, Jean-Claude; Guyot, François

2000-07-01

The metal-silicate microstructures in the shock-induced melt pockets of the Tenham (L6) chondrite have been investigated by analytical transmission electron microscopy. The melt areas, formed under high-pressure, high-temperature dynamic shock conditions, consist of spherical Fe-Ni metal/iron sulfide globules embedded in a silicate glass matrix, showing that the melt was quenched at high cooling rate. The Fe-Ni fraction in the globules is two-phase, composed of a bcc phase (˜5 wt% Ni) and an fcc phase (˜49 wt% Ni), indicating that fractional crystallisation of the metal occurred during the fast cooling. The metal fraction also contains appreciable amounts of non-siderophile elements (mostly Si, Mg and O) suggesting that these elements were trapped in the metal, either as alloying components or as tiny silicate or oxide inclusions. In the iron sulfide fraction, the Na content is high (>3 wt%), suggesting chalcophile behaviour for Na during the shock event. The composition of the silicate glass reflects non-equilibrium melting of several silicate phases (olivine, pyroxene and plagioclase). Moreover, the FeO content is high compared to the FeO contents of the unmelted silicates. Some Fe redistribution took place between metal and silicate liquids during the shock event. The silicate glass also contains tiny iron sulfide precipitates which most probably originated by exsolution during quench, suggesting that the molten silicate retained significant amounts of S, dissolved at high temperature and high pressure. Based on these observations, we suggest that non-equilibrium phenomena may be important in determining the compositions of metal and silicate reservoirs during their differentiation.

Experimental segregation of iron-nickel metal, iron-sulfide, and olivine in a thermal gradient: Preliminary results

NASA Technical Reports Server (NTRS)

Jurewicz, Stephen R.; Jones, J. H.

1993-01-01

Speculation about the possible mechanisms for core formation in small asteroids raises more questions than answers. Petrologic evidence from iron meteorites, pallasites, and astronomical observations of M asteroids suggests that many small bodies were capable of core formation. Recent work by Taylor reviews the geochemical evidence and examines the possible physical/mechanical constraints on segregation processes. Taylor's evaluation suggests that extensive silicate partial melting (preferably 50 vol. percent or greater) is required before metal can segregate from the surrounding silicate and form a metal core. The arguments for large degrees of silicate partial melting are two-fold: (1) elemental trends in iron meteorites require that the metal was at is liquidus; and (2) experimental observations of metal/sulfide inclusions in partially molten silicate meteorites show that the metal/sulfide tends to form spherules in the liquid silicate due to surface tension effects. Taylor points out that for these metal spherules to sink through a silicate mush, high degrees of silicate partial melting are required to lower the silicate yield strength. Although some qualitative experimental data exists, little is actually known about the behavior of metals and liquid sulfides dispersed in silicate systems. In addition, we have been impressed with the ability of cumulative olivine to expel trapped liquid when placed in a thermal gradient. Consequently, we undertook to accomplish the following: (1) experimentally evaluate the potential for metal/sulfide/silicate segregation in a thermal gradient; and (2) obtain quantitative data of the wetting parameters of metal-sulfide melts among silicate grains.

The Biogeochemistry of Indium, Gallium, and Germanium in Mine Wastes

NASA Astrophysics Data System (ADS)

White, S. J.; Schaider, L. A.; Shine, J. P.

2017-12-01

Indium (In), gallium (Ga), and germanium (Ge) are metals important in new energy technologies, and use of these metals is expanding dramatically. Humans are significantly impacting their natural cycling. Mining and smelting appear to be currently the largest sources of these metals to the environment, primarily because In, Ga, and Ge are byproducts of lead and zinc mining. The life cycle of these metals is poorly understood, including partitioning and speciation during mining processes, environmental behavior, and toxicity. The Tar Creek Superfund Site in Oklahoma, USA, is an abandoned Mississippi Valley-type lead and zinc mining area, containing sphalerite (ZnS) and galena (PbS). 30 major tailings piles remain in the area; elevated concentrations of lead (Pb), zinc (Zn), and cadmium (Cd) in these wastes have caused human health concerns. In order to better understand the biogeochemical cycling of In, Ga, and Ge associated with mining processes, we conducted geochemical and biological extractions of size-fractionated mine tailings from the Tar Creek site. Small tailings particles (<2.5 μm) contain higher concentrations of In, Ga, and Ge than large particles (>0.5 mm); a similar enrichment has been shown previously for Pb, Zn, and Cd. Ge is highly elevated in the mine wastes at this site; small particles contain up to 40x crustal concentrations. Ga and In are not significantly higher than crustal. (Crustal concentrations: Ge 1.4 mg/kg; Ga 14 mg/kg; In 100 mg/kg) While Pb, Zn, and Cd have been shown previously to be highly labile, and thus significantly re-worked from the original sulfide ore, sequential extractions suggest that In, Ga, and Ge are in less labile forms. In and Ga are liberated primarily from solutions that target semi-labile amorphous sulfides, Fe- and Mn-oxyhydroxides, and crystalline sulfide phases. By contrast, over 85% of the Ge in mine wastes from this site is bound in a residual mineral fraction (e.g. silicates) that is not liberated by a hot nitric acid leach. The bioaccessibility of In, Ga, and Ge also is significant - simulated gastric fluid extractions release 41-84% of each metal, suggesting that they do not reside in the ZnS or PbS phases. Future studies will further explore the cycling of Ga, Ge, and In at the Tar Creek site, including differences in speciation, mobility, and bioaccessibility of each.

21 CFR 182.2227 - Calcium silicate.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Calcium silicate. 182.2227 Section 182.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

21 CFR 182.2227 - Calcium silicate.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 3 2011-04-01 2011-04-01 false Calcium silicate. 182.2227 Section 182.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

40 CFR 721.9514 - Ethyl silicate, reaction products with modified alkoxysilane salt (generic).

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Ethyl silicate, reaction products with... Significant New Uses for Specific Chemical Substances § 721.9514 Ethyl silicate, reaction products with.... (1) The chemical substance identified generically as Ethyl silicate, reaction products with modified...

40 CFR 721.9514 - Ethyl silicate, reaction products with modified alkoxysilane salt (generic).

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Ethyl silicate, reaction products with... Significant New Uses for Specific Chemical Substances § 721.9514 Ethyl silicate, reaction products with.... (1) The chemical substance identified generically as Ethyl silicate, reaction products with modified...

21 CFR 182.2227 - Calcium silicate.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 3 2012-04-01 2012-04-01 false Calcium silicate. 182.2227 Section 182.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

21 CFR 182.2227 - Calcium silicate.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 3 2013-04-01 2013-04-01 false Calcium silicate. 182.2227 Section 182.2227 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR... Calcium silicate. (a) Product. Calcium silicate. (b) Tolerance. 2 percent and 5 percent. (c) Limitations...

Liquid precursor for deposition of indium selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-22

Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and method of depositing a liquid precursor on a substrate are also disclosed.

Indium sealing techniques.

NASA Technical Reports Server (NTRS)

Hochuli, U.; Haldemann, P.

1972-01-01

Gold films are used as an alloying flux to form 5-micron-thick indium film seals at temperatures below 300 C. Pyrex was sealed to quartz, ULE, CER-VIT, Irtran 2, Ge, GaAs, Invar, Kovar, Al, and Cu. The seals can also be used as current feedthroughs and graded seals.

Synthesis, characterization and catalytic activity of indium substituted nanocrystalline Mobil Five (MFI) zeolite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, Kishor Kr.; Nandi, Mithun; Talukdar, Anup K., E-mail: anup_t@sify.com

2015-06-15

Highlights: • In situ modification of the MFI zeolite by incorporation of indium. • The samples were characterized by XRD, FTIR, TGA, UV–vis (DRS), SAA, EDX and SEM. • The incorporation of indium was confirmed by XRD, FT-IR, UV–vis (DRS), EDX and TGA. • Hydroxylation of phenol reaction was studied on the synthesized catalysts. - Abstract: A series of indium doped Mobil Five (MFI) zeolite were synthesized hydrothermally with silicon to aluminium and indium molar ratio of 100 and with aluminium to indium molar ratios of 1:1, 2:1 and 3:1. The MFI zeolite phase was identified by XRD and FT-IRmore » analysis. In XRD analysis the prominent peaks were observed at 2θ values of around 6.5° and 23° with a few additional shoulder peaks in case of all the indium incorporated samples suggesting formation of pure phase of the MFI zeolite. All the samples under the present investigation were found to exhibit high crystallinity (∼92%). The crystallite sizes of the samples were found to vary from about 49 to 55 nm. IR results confirmed the formation of MFI zeolite in all cases showing distinct absorbance bands near 1080, 790, 540, 450 and 990 cm{sup −1}. TG analysis of In-MFI zeolites showed mass losses in three different steps which are attributed to the loss due to adsorbed water molecules and the two types TPA{sup +} cations. Further, the UV–vis (DRS) studies reflected the position of the indium metal in the zeolite framework. Surface area analysis of the synthesized samples was carried out to characterize the synthesized samples The analysis showed that the specific surface area ranged from ∼357 to ∼361 m{sup 2} g{sup −1} and the pore volume of the synthesized samples ranged from 0.177 to 0.182 cm{sup 3} g{sup −1}. The scanning electron microscopy studies showed the structure of the samples to be rectangular and twinned rectangular shaped. The EDX analysis was carried out for confirmation of Si, Al and In in zeolite frame work. The catalytic activities of the synthesized samples were investigated with respect to hydroxylation of phenol, in which catechol and hydroquinone were found to be the major products. It is observed that under all reaction conditions catechol selectivity was higher than the hydroquinone selectivity. In-MFI zeolites were successfully synthesized and were used as an effective catalyst for the hydroxylation of phenol to synthesize catechol and hydroquinone as the major product.« less

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

PubMed

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

First-principles analysis of structural and opto-electronic properties of indium tin oxide

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-05-01

Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

Apker Award Talk: Atomic Beam Measurement of the Indium 6p1 / 2 Scalar Polarizability

NASA Astrophysics Data System (ADS)

Augenbraun, Benjamin

2016-05-01

We report on the first measurement of the scalar polarizability of the indium 6p1 / 2 -excited state using two-step laser spectroscopy in an atomic beam. This is one in a series of precise atomic structure measurements by the Majumder lab at Williams College, which serve as stringent tests of abinitio calculation methods for three-valence-electron systems. We stabilize a laser to the indium 5p1 / 2 --> 6s1 / 2 410 nm transition and scan a second laser across the 6s1 / 2 --> 6p1 / 2 1343 nm transition. The two laser beams are overlapped and interact transversely with a collimated atomic beam of indium. Two-tone FM spectroscopy allows us to observe the small (< 1 part in 103) IR absorption, and characteristic sideband features in the RF-demodulated lineshape provide built-in frequency calibration. Application of DC electric fields up to 20 kV/cm give rise to Stark shifts of order 100 MHz. Because our group has previously measured the difference in polarizabilities within the 410 nm transition, we can determine the 6p1 / 2 polarizability with no loss of precision. Preliminary results are in excellent agreement with recent theoretical calculations and can be used to infer accurate values for the indium 6 p - 5 d matrix elements.

A new indium metal-organic 3D framework with 1,3,5-benzenetricarboxylate, MIL-96 (In), containing {mu} {sub 3}-oxo-centered trinuclear units and a hexagonal 18-ring network

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volkringer, Christophe; Loiseau, Thierry

2006-05-25

A new indium trimesate In{sub 12}O(OH){sub 12}({l_brace}OH{r_brace}{sub 4},{l_brace}H{sub 2}O{r_brace}{sub 5})[btc]{sub 6}.{approx}31H{sub 2}O, called MIL-96 (btc = 1,3,5-benzenetricarboxylate or trimesate species) was hydrothermally synthesized under mild condition (210 deg. C, 5 h) in the presence of trimethyl 1,3,5-benzenetricarboxylate in water and characterized by single-crystal X-ray diffraction technique. The MIL-96 (In) structure exhibits a three-dimensional metal-organic framework containing isolated trinuclear {mu} {sub 3}-oxo-bridged indium clusters and infinite chains of InO{sub 4}(OH){sub 2} and InO{sub 2}(OH){sub 3}(H{sub 2}O) octahedra generating a hexagonal network based on 18-membered ring. The two types of indium entities are connected to each other through the trimesate species whichmore » induce corrugated chains of indium octahedra, linked via {mu} {sub 2}-hydroxo bonds with the specific -cis-cis-trans- sequence. The 3D framework of MIL-96 reveals three kind of cavities (two of them have estimated {approx} 400 A{sup 3} volumes), in which are encapsulated free water molecules. The latter species are removed upon heating at 150 deg. C.« less

Genesis of IIICD Iron Meteorites: Evidence From Silicate Inclusions

NASA Astrophysics Data System (ADS)

McCoy, T. J.; Keil, K.; Scott, E. R. D.; Haack, H.

1992-07-01

The IAB and IIICD iron meteorite groups exhibit much larger ranges in siderophile concentrations than other groups and commonly contain silicate inclusions. Extensive studies of metal in both groups and silicates in IAB irons have led to a variety of ideas to explain the genesis of these groups. Wasson et al. (1980) envision each meteorite forming in a separate impact melt pool. Kracher (1982, 1985) suggested that the siderophile trends might result from fractional crystallization of both metal and troilite in a S-saturated magma. A role for oxidation-reduction in these groups has been proposed by Scott and Bild (1974). Similarities in siderophile elemental trends indicate that IIICD metal has a similar origin, although data on silicate inclusions in IIICD irons are scarce (Ramdohr, 1973; Scott and Bild, 1974; Kracher and Kurat, 1977; Prinz et al., 1982; Clayton et al., 1983). We report the first detailed study of silicate inclusions in IIICD iron meteorites in an attempt to elucidate their history. We have studied the only silicate-bearing IIICD irons - Carlton, Dayton, and the recently reported Maltahohe. Silicate-graphite-phosphate inclusions comprise at most a few percent of the bulk meteorite, and silicates comprise <25 vol% of the inclusion. Silicate mineralogy and chemistry vary systematically with increasing M content of the metal. Maltahohe (10.7 wt% Ni) and Carlton (13.0%) contain olivine, pyroxene, and plagioclase, whereas Dayton (17.0%) contains pyroxene, plagioclase, and SiO2. Pyroxene becomes more FeO-rich from Maltahohe (FS(sub)7.8) to Carlton (Fs(sub)9.7) to Dayton (Fs(sub)11.6). Inverse FeO zoning in silicates and lower Fa than Fs indicate reduction in all three meteorites. Plagioclase compositions in IIICD (An(sub)1.1-4.9) are lower than IAB (An(sub)9.2-2l.5) and uncorrelated with Ni content. The abundances of associated phases also vary. Graphite comprises ~25 vol% of Maltahohe silicate inclusions, but only a few percent in Carlton, and is absent in Dayton silicate inclusions. Phosphate mineralogy and modal abundance also vary, with phosphates absent in Maltahohe, chlorapatite comprising 0-70 vol% of inclusions in Carlton, and the unusual phosphates brianite and panethite, along with whitlockite, comprising up to 55 vol% of Dayton's inclusions. The small number of silicate-bearing IIICD irons require that any conclusions must be considered tentative. The precursor silicate assemblage was similar for IAB and IIICD, as suggested by the general similarity between Maltahohe and IAB silicate inclusions. With increasing Ni contents, however, IIICD and IAB silicate inclusions become dramatically different, as indicated by the mineralogical and chemical trends present in IIICD and absent in IAB silicate inclusions. Silicate inclusions in the Ni-rich IAB irons (e.g., San Cristobal, 25 wt% Ni) do not resemble the phosphate-rich, evolved-silicate assemblages observed in Dayton. It is clear that one or more processes were capable of producing changes in metal compositions and silicate inclusion mineralogy, which correlated with one another. None of the observed trends in silicate mineralogy are predicted by the impact-melt model, although impact might have played a role in mixing silicates into the metallic magma. Some trends are consistent with oxidation-reduction, but variations in some siderophiles (e.g., Ir, Cu) cannot be explained easily by this mechanism. We believe that solid silicates must have been mixed with an evolving metallic melt, with the metallic magma dramatically influencing the mineralogy and chemistry of the inclusion, similar to the fractional crystallization model of Kracher (1982,1985). However, many details of this process remain obscure, including the mechanism that concentrated a S-rich melt, the mixing of metal and silicates, and the fractionation of S. References: Clayton et al. (1983) EPSL 65, 229-232. Kracher (1982) GRL 9, 412-415. Kracher (1985) PLPSC 15, C689-C698. Kracher and Kurat (1977) Meteoritics 12, 282-283. Scott and Bild (1974) GCA 38, 1379-1391. Prinz et al. (1982) LPSC XIlI, 632-633. Ramdohr (1973) Elsevier Pub. Co. Wasson et al. (1980) Z. Naturforsch. 35a, 781-795.

Method for the production of mineral wool and iron from serpentine ore

DOEpatents

O'Connor, William K [Albany, OR; Rush, Gilbert E [Scio, OR; Soltau, Glen F [Lebanon, OR

2011-10-11

Magnesium silicate mineral wools having a relatively high liquidus temperature of at least about 1400.degree. C. and to methods for the production thereof are provided. The methods of the present invention comprise melting a magnesium silicate feedstock (e.g., comprising a serpentine or olivine ore) having a liquidus temperature of at least about 1400.degree. C. to form a molten magnesium silicate, and subsequently fiberizing the molten magnesium silicate to produce a magnesium silicate mineral wool. In one embodiment, the magnesium silicate feedstock contains iron oxide (e.g., up to about 12% by weight). Preferably, the melting is performed in the presence of a reducing agent to produce an iron alloy, which can be separated from the molten ore. Useful magnesium silicate feedstocks include, without limitation, serpentine and olivine ores. Optionally, silicon dioxide can be added to the feedstock to lower the liquidus temperature thereof.

Mineralogical Characterization of Fe-Bearing AGB and Supernova Silicate Grains From the Queen Alexandra Range 99177 Meteorite

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Keller, L. P.; Messenger, S.; Rahman, Z.

2017-01-01

Spectroscopic observations of the circumstellar envelopes of evolved O-rich stars indicate the dust is mostly amorphous silicate with olivine-like compositions. Spectral modeling suggests these grains are Fe-rich [Mg/(Mg+Fe) 0.5], but it is not known whether the Fe is distributed within the silicate matrix or exists as metal inclusions. In contrast, the crystalline silicates are inferred to be extremely Mg-rich [Mg/(Mg+Fe) > 0.95]. The mineralogies and chemical compositions of dust in supernova (SN) remnants are not as well constrained, but abundant silicates of olivine-like and enstatite-like compositions have been fit to the infrared emission features. Silicates in the interstellar medium (ISM) are >99% amor-phous and Fe-bearing. The dearth of crystalline silicates in the ISM requires that some amorphization or destruction mechanisms process these grains.

IN SITU INFRARED MEASUREMENTS OF FREE-FLYING SILICATE DURING CONDENSATION IN THE LABORATORY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishizuka, Shinnosuke; Kimura, Yuki; Sakon, Itsuki

2015-04-20

We developed a new experimental system for infrared (IR) measurements on free-flying nucleating nanoparticles in situ and applied it to studies on silicate particles. We monitored the condensation of magnesium-bearing silicate nanoparticles from thermally evaporated magnesium and silicon monoxide vapor under an atmosphere of oxygen and argon. The IR spectrum of newly condensed particles showed a spectral feature for non-crystalline magnesium-bearing silicate that is remarkably consistent with the IR spectrum of astronomically observed non-crystalline silicate around oxygen-rich evolved stars. The silicate crystallized at <500 K and eventually developed a high crystallinity. Because of the size effects of nanoparticles, the silicatemore » would be expected to be like a liquid at least during the initial stages of nucleation and growth. Our experimental results therefore suggest decreasing the possible formation temperature of crystalline silicates in dust formation environments with relatively higher pressure.« less

Two rare indium-based porous metal-metalloporphyrin frameworks exhibiting interesting CO 2 uptake

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Wen-Yang; Zhang, Zhuxiu; Cash, Lindsay

2014-01-13

Two rare indium-based porous metal–metalloporphyrin frameworks (MMPFs), MMPF-7 and MMPF-8, were constructed by self-assembly of In(III) and two custom-designed porphyrin–tetracarboxylate ligands. MMPF-7 and MMPF-8 possess the pts topology and exhibit interesting CO 2 adsorption properties.

Scintigraphic evaluation in musculoskeletal sepsis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merkel, K.D.; Fitzgerald, R.H. Jr.; Brown, M.L.

In this article, the mechanism of technetium, gallium, and indium-labeled white blood cell localization in septic processes is detailed, and the method of interpretation of these three isotopes with relationship to musculoskeletal infection is outlined. Specific clinical application of technetium, gallium, and indium-labeled white blood cell imaging for musculoskeletal sepsis is reviewed.

The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

ERIC Educational Resources Information Center

Steel, G. G.

1970-01-01

Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

Thin Metallic Films from Solvated Metal Atoms.

DTIC Science & Technology

1987-07-14

platinium , and especially indium are discussed. N, ; ,, -- !, : N) By Dist , , . N S f1 -- ~~r, 821-19 C[ Thin metallic films from solvated metal atoms...metallic films. Cold, palladium, platinium , and especially indium are discussed. 1- INTRQDUCTION In the field of chemistry an active and broad area of

Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

NASA Technical Reports Server (NTRS)

Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

2005-01-01

This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

NASA Astrophysics Data System (ADS)

Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

2010-05-01

Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron Radiation Facility, in Grenoble/France). Polymetallic chalcogenide minerals and various model compounds displaying distinct bonding situations of indium to other ligands (oxygen and halides) were studied. Encouraging results from a first experiment [5] showed the presence of a "white line" in the XANES spectra collected from InF3 and from In-hosting bornite; however, the impossibility of clearly identifying the nanoscale phase hosting indium in sulphide ore samples has hindered a full interpretation of X-ray absorption data. The crystal chemistry of indium in natural chalcogenides is now reanalysed and XANES results obtained so far for polymetallic sulphides are accordingly re-evaluated, disclosing a challenging clue for indium binding state in these host minerals within sulphide ores. [1] M.O. Figueiredo et al. (2007) Procd. 9th Biennial SGA Mtg., Dublin/Ireland, edt. C. Andrew et al., 1355-1357. [2] O.C. Gaspar (2002) Canad. Miner. 40, 611-636. [3] M.O. Figueiredo & T.P. Silva (2009) ICANS 23, 23rd Int. Conf. Amorphous & Nano-crystalline Semiconductors, Netherlands, August 23-28. Poster ID 229 (abstract). [4] T. Seifert & D. Sandmann (2002) Ore Geol. Reviews 28, 1-31. [5] M.O. Figueiredo & T.P. Silva (2009) XVIII Int. Mater. Res. Congr., Mexico, August 16-20. Symp. 20, Poster nr. 1 (abstract). * Work developed within the research project PTDC/CTE-GIN/67027/2006 financed by the Portuguese Foundation for Science & Technology (FCT/MCTES). The financial support from EU to perform the experiments at the ESRF is also acknowledged.

Rice husks as a sustainable silica source for hierarchical flower-like metal silicate architectures assembled into ultrathin nanosheets for adsorption and catalysis.

PubMed

Zhang, Shouwei; Gao, Huihui; Li, Jiaxing; Huang, Yongshun; Alsaedi, Ahmed; Hayat, Tasawar; Xu, Xijin; Wang, Xiangke

2017-01-05

Metal silicates have attracted extensive interests due to their unique structure and promising properties in adsorption and catalysis. However, their applications were hampered by the complex and expensive synthesis. In this paper, three-dimensional (3D) hierarchical flower-like metal silicate, including magnesium silicate, zinc silicate, nickel silicate and cobalt silicate, were for the first time prepared by using rice husks as a sustainable silicon source. The flower-like morphology, interconnected ultrathin nanosheets structure and high specific surface area endowed them with versatile applications. Magnesium silicate was used as an adsorbent with the maximum adsorption capacities of 557.9, 381.3, and 482.8mg/g for Pb 2+ , tetracycline (TC), and UO 2 2+ , respectively. Ni nanoparticles/silica (Ni NPs/SiO 2 ) exhibited high catalytic activity and good stability for 4-nitrophenol (4-NP) reduction within only ∼160s, which can be attributed to the ultra-small particle size (∼6.8nm), good dispersion and high loading capacity of Ni NPs. Considering the abundance and renewability of rice husks, metal silicate with complex architecture can be easily produced at a large scale and become a sustainable and reliable resource for multifunctional applications. Copyright © 2016 Elsevier B.V. All rights reserved.

A comparative study of the continuum and emission characteristics of comet dust. 1: Are the silicates in Comet Halley and Kohoutek amorphous or crystalline

NASA Technical Reports Server (NTRS)

Nansheng, Zhao; Greenberg, J. Mayo; Hage, J. I.

1989-01-01

A continuum emission was subtracted from the 10 micron emission observed towards comets Halley and Kohoutek. The 10 micron excess emissions were compared with BN absorption and laboratory amorphous silicates. The results show that cometary silicates are predominantly amorphous which is consistent with the interstellar dust model of comets. It is concluded that cometary silicates are predominantly similar to interstellar silicates. For a periodic comet like Comet Halley, it is to be expected that some of the silicate may have been heated enough to convert to crystalline form. But apparently, this is only a small fraction of the total. A comparison of Comet Halley silicates with a combination of the crystalline forms observed in interplanetary dust particles (IPDs) seemed reasonable at first sight (Walker 1988, Brownlee 1988). But, if true, it would imply that the total silicate mass in Comet Halley dust is lower than that given by mass spectrometry data of Kissel and Krueger (1987). They estimated m sub org/m sub sil = 0.5 while using crystalline silicate to produce the 10 micron emission would give m sub org/m sub sil = 5 (Greenberg et al. 1988). This is a factor of 10 too high.

Calcium silicate-based drug delivery systems.

PubMed

Zhu, Ying-Jie; Guo, Xiao-Xuan; Sham, Tsun-Kong

2017-02-01

Compared with other inorganic materials such as silica, metal oxides, noble metals and carbon, calcium silicate-based materials, especially nanostructured calcium silicate materials, have high biocompatibility, bioactivity and biodegradability, high specific surface area, nanoporous/hollow structure, high drug-loading capacity, pH-responsive drug release behavior and desirable drug release properties, and thus they are promising for the application in drug delivery. Calcium silicate-based drug delivery systems have a long drug-release time, which can significantly prolong the therapeutic effect of drugs. Another advantage of calcium silicate-based drug delivery systems is their pH-responsive drug release property, which can act as an ideal platform for targeted drug delivery. Areas covered: In recent years, studies have been carried out on calcium silicate-based drug delivery systems, and important results and insights have been documented. This article is not intended to offer a comprehensive review on the research on calcium silicate-based drug delivery systems, but presents some examples reported in the literature, and includes new insights obtained by tracking the interactions between drug molecules and calcium silicate carriers on the molecular level using the synchrotron-based X-ray spectroscopy. Expert opinion: Finally, our opinions on calcium silicate-based drug delivery systems are provided, and several research directions for the future studies are proposed.

Measurement of the efficacy of calcium silicate for the protection and repair of dental enamel.

PubMed

Parker, Alexander S; Patel, Anisha N; Al Botros, Rehab; Snowden, Michael E; McKelvey, Kim; Unwin, Patrick R; Ashcroft, Alexander T; Carvell, Mel; Joiner, Andrew; Peruffo, Massimo

2014-06-01

To investigate the formation of hydroxyapatite (HAP) from calcium silicate and the deposition of calcium silicate onto sound and acid eroded enamel surfaces in order to investigate its repair and protective properties. Calcium silicate was mixed with phosphate buffer for seven days and the resulting solids analysed for crystalline phases by Raman spectroscopy. Deposition studies were conducted on bovine enamel surfaces. Acid etched regions were produced on the enamel surfaces using scanning electrochemical cell microscopy (SECCM) with acid filled pipettes and varying contact times. Following treatment with calcium silicate, the deposition was visualised with FE-SEM and etch pit volumes were measured by AFM. A second set of bovine enamel specimens were pre-treated with calcium silicate and fluoride, before acid exposure with the SECCM. The volumes of the resultant acid etched pits were measured using AFM and the intrinsic rate constant for calcium loss was calculated. Raman spectroscopy confirmed that HAP was formed from calcium silicate. Deposition studies demonstrated greater delivery of calcium silicate to acid eroded than sound enamel and that the volume of acid etched enamel pits was significantly reduced following one treatment (p<0.05). In the protection study, the intrinsic rate constant for calcium loss from enamel was 0.092 ± 0.008 cm/s. This was significantly reduced, 0.056 ± 0.005 cm/s, for the calcium silicate treatments (p<0.0001). Calcium silicate can transform into HAP and can be deposited on acid eroded and sound enamel surfaces. Calcium silicate can provide significant protection of sound enamel from acid challenges. Calcium silicate is a material that has potential for a new approach to the repair of demineralised enamel and the protection of enamel from acid attacks, leading to significant dental hard tissue benefits. © 2014 Elsevier Ltd. All rights reserved.

Mineral stimulation of subsurface microorganisms: release of limiting nutrients from silicates

USGS Publications Warehouse

Roger, Jennifer Roberts; Bennett, Philip C.

2004-01-01

Microorganisms play an important role in the weathering of silicate minerals in many subsurface environments, but an unanswered question is whether the mineral plays an important role in the microbial ecology. Silicate minerals often contain nutrients necessary for microbial growth, but whether the microbial community benefits from their release during weathering is unclear. In this study, we used field and laboratory approaches to investigate microbial interactions with minerals and glasses containing beneficial nutrients and metals. Field experiments from a petroleum-contaminated aquifer, where silicate weathering is substantially accelerated in the contaminated zone, revealed that phosphorus (P) and iron (Fe)-bearing silicate glasses were preferentially colonized and weathered, while glasses without these elements were typically barren of colonizing microorganisms, corroborating previous studies using feldspars. In laboratory studies, we investigated microbial weathering of silicates and the release of nutrients using a model ligand-promoted pathway. A metal-chelating organic ligand 3,4 dihydroxybenzoic acid (3,4 DHBA) was used as a source of chelated ferric iron, and a carbon source, to investigate mineral weathering rate and microbial metabolism.In the investigated aquifer, we hypothesize that microbes produce organic ligands to chelate metals, particularly Fe, for metabolic processes and also form stable complexes with Al and occasionally with Si. Further, the concentration of these ligands is apparently sufficient near an attached microorganism to destroy the silicate framework while releasing the nutrient of interest. In microcosms containing silicates and glasses with trace phosphate mineral inclusions, microbial biomass increased, indicating that the microbial community can use silicate-bound phosphate inclusions. The addition of a native microbial consortium to microcosms containing silicates or glasses with iron oxide inclusions correlated to accelerated weathering and release of Si into solution as well as the accelerated degradation of the model substrate 3,4 DHBA. We propose that silicate-bound P and Fe inclusions are bioavailable, and microorganisms may use organic ligands to dissolve the silicate matrix and access these otherwise limiting nutrients.

Predicting the Sources and Formation Mechanisms of Evolved Lunar Crust by Linking K/Ca Ratios of Lunar Granites to Analogous Terrestrial Igneous Rocks

NASA Technical Reports Server (NTRS)

Mills, R. D.; Simon, J. I.

2012-01-01

Although silicic rocks (i.e. granites and rhyolites) comprise a minor component of the sampled portion of the lunar crust, recent remote sensing studies [e.g., 1-4] indicate that several un-sampled regions of the Moon have significantly higher concentrations of silicic material (also high in [K], [U], and [Th]) than sampled regions. Within these areas are morphological features that are best explained by the existence of chemically evolved volcanic rocks. Observations of silicic domes [e.g., 1-5] suggest that sizable networks of silicic melt were present during crust formation. Isotopic data indicate that silicic melts were generated over a prolonged timespan from 4.3 to 3.9 Ga [e.g., 6-8]. The protracted age range and broad distribution of silicic rocks on the Moon indicate that their petrogenesis was an important mechanism for secondary crust formation. Understanding the origin and evolution of such silicic magmas is critical to determining the composition of the lunar crustal highlands and will help to distinguish between opposing ideas for the Moon's bulk composition and differentiation. The two main hypotheses for generating silicic melts on Earth are fractional crystallization or partial melting. On the Moon silicic melts are thought to have been generated during extreme fractional crystallization involving end-stage silicate liquid immiscibility (SLI) [e.g. 9, 10]. However, SLI cannot account for the production of significant volumes of silicic melt and its wide distribution, as reported by the remote global surveys [1, 2, 3]. In addition, experimental and natural products of SLI show that U and Th, which are abundant in the lunar granites and seen in the remote sensing data of the domes, are preferentially partitioned into the depolymerized ferrobasaltic magma and not the silicic portion [11, 12]. If SLI is not the mechanism that generated silicic magmas on the Moon then alternative processes such as fractional crystallization (only crystal-liquid separation) or partial melting should be considered as viable possibilities to be tested.

Final report on the safety assessment of potassium silicate, sodium metasilicate, and sodium silicate.

PubMed

Elmore, Amy R

2005-01-01

Potassium Silicate, Sodium Metasilicate, and Sodium Silicate combine metal cations with silica to form inorganic salts used as corrosion inhibitors in cosmetics. Sodium Metasilicate also functions as a chelating agent and Sodium Silicate as a buffering and pH adjuster. Sodium Metasilicate is currently used in 168 formulations at concentrations ranging from 13% to 18%. Sodium Silicate is currently used in 24 formulations at concentrations ranging from 0.3% to 55%. Potassium Silicate and Sodium Silicate have been reported as being used in industrial cleaners and detergents. Sodium Metasilicate is a GRAS (generally regarded as safe) food ingredient. Aqueous solutions of Sodium Silicate species are a part of a chemical continuum of silicates based on an equilibrium of alkali, water, and silica. pH determines the solubility of silica and, together with concentration, determines the degree of polymerization. Sodium Silicate administered orally is readily absorbed from the alimentary canal and excreted in the urine. The toxicity of these silicates has been related to the molar ratio of SiO2/Na2O and the concentration being used. The Sodium Metasilicate acute oral LD50 ranged from 847 mg/kg in male rats to 1349.3 mg/kg in female rats and from 770 mg/kg in female mice to 820 mg/kg in male mice. Gross lesions of variable severity were found in the oral cavity, pharynx, esophagus, stomach, larynx, lungs, and kidneys of dogs receiving 0.25 g/kg or more of a commercial detergent containing Sodium Metasilicate; similar lesions were also seen in pigs administered the same detergent and dose. Male rats orally administered 464 mg/kg of a 20% solution containing either 2.0 or 2.4 to 1.0 ratio of sodium oxide showed no signs of toxicity, whereas doses of 1000 and 2150 mg/kg produced gasping, dypsnea, and acute depression. Dogs fed 2.4 g/kg/day of Sodium Silicate for 4 weeks had gross renal lesions but no impairment of renal function. Dermal irritation of Potassium Silicate, Sodium Metasilicate, and Sodium Silicate ranged from negligible to severe, depending on the species tested and the molar ratio and concentration tested. Sodium Metasilicate was negative in the local lymph node assay (LLNA), but a delayed-type hypersensitivity response was observed in mice. Potassium Silicate was nonirritating in two acute eye irritation studies in rabbits. Sodium Metasilicate (42.4% H2O) was corrosive to the rabbit eye. Sodium Silicate was a severe eye irritant in some eye irritation studies, but was irritating or nonirritating in others. A skin freshener containing Sodium Silicate was nonirritating. Sodium Metasilicate was nonmutagenic in bacterial cells. Rats given Sodium Silicate (600 and 1200 ppm of added silica) in the drinking water in reproductive studies produced a reduced number of offspring: to 67% of controls at 600 ppm and to 80% of controls at 1200 ppm. Three adult rats injected intratesticularly and subcutaneously with 0.8 mM/kg of Sodium Silicate showed no morphological changes in the testes and no effect on the residual spermatozoa in the ductus deferens. Sodium Metasilicate (37% in a detergent) mixed with water was a severe skin irritant when tested on intact and abraded human skin, but 6%, 7%, and 13% Sodium Silicate were negligible skin irritants to intact and abraded human skin. Sodium Silicate (10% of a 40% aqueous solution) was negative in a repeat-insult predictive patch test in humans. The same aqueous solution of Sodium Silicate was considered a mild irritant under normal use conditions in a study of cumulative irritant properties. The Cosmetic Ingredient Review (CIR) Expert Panel recognized the irritation potential of these ingredients, especially in leave-on products. However, because these ingredients have limited dermal absorption and Sodium Metasilicate is a GRAS direct food substance, the Panel deemed the ingredients safe for use in cosmetic products in the practices of use and concentration described in this safety assessment, when formulated to avoid irritation.

40 CFR 180.1268 - Potassium silicate; exemption from the requirement of a tolerance.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 24 2014-07-01 2014-07-01 false Potassium silicate; exemption from the... Exemptions From Tolerances § 180.1268 Potassium silicate; exemption from the requirement of a tolerance. Potassium silicate is exempt from the requirement of a tolerance in or on all food commodities so long as...

40 CFR 180.1268 - Potassium silicate; exemption from the requirement of a tolerance.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 25 2012-07-01 2012-07-01 false Potassium silicate; exemption from the... Exemptions From Tolerances § 180.1268 Potassium silicate; exemption from the requirement of a tolerance. Potassium silicate is exempt from the requirement of a tolerance in or on all food commodities so long as...

40 CFR 180.1268 - Potassium silicate; exemption from the requirement of a tolerance.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 23 2010-07-01 2010-07-01 false Potassium silicate; exemption from the... Exemptions From Tolerances § 180.1268 Potassium silicate; exemption from the requirement of a tolerance. Potassium silicate is exempt from the requirement of a tolerance in or on all food commodities so long as...

40 CFR 180.1268 - Potassium silicate; exemption from the requirement of a tolerance.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 25 2013-07-01 2013-07-01 false Potassium silicate; exemption from the... Exemptions From Tolerances § 180.1268 Potassium silicate; exemption from the requirement of a tolerance. Potassium silicate is exempt from the requirement of a tolerance in or on all food commodities so long as...

40 CFR 180.1268 - Potassium silicate; exemption from the requirement of a tolerance.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 24 2011-07-01 2011-07-01 false Potassium silicate; exemption from the... Exemptions From Tolerances § 180.1268 Potassium silicate; exemption from the requirement of a tolerance. Potassium silicate is exempt from the requirement of a tolerance in or on all food commodities so long as...

Soft X-Ray Irradiation of Silicates: Implications for Dust Evolution in Protoplanetary Disks

NASA Astrophysics Data System (ADS)

Ciaravella, A.; Cecchi-Pestellini, C.; Chen, Y.-J.; Muñoz Caro, G. M.; Huang, C.-H.; Jiménez-Escobar, A.; Venezia, A. M.

2016-09-01

The processing of energetic photons on bare silicate grains was simulated experimentally on silicate films submitted to soft X-rays of energies up to 1.25 keV. The silicate material was prepared by means of a microwave assisted sol-gel technique. Its chemical composition reflects the Mg2SiO4 stoichiometry with residual impurities due to the synthesis method. The experiments were performed using the spherical grating monochromator beamline at the National Synchrotron Radiation Research Center in Taiwan. We found that soft X-ray irradiation induces structural changes that can be interpreted as an amorphization of the processed silicate material. The present results may have relevant implications in the evolution of silicate materials in X-ray-irradiated protoplanetary disks.

Diagrams of the formation of In2S3 and In2Se3 films on vitroceramic upon precipitation, according to potentiometric titration

NASA Astrophysics Data System (ADS)

Tulenin, S. S.; Bakhteev, S. A.; Yusupov, R. A.; Maskaeva, L. N.; Markov, V. F.

2013-10-01

Boundary conditions and ranges of the formation of indium(III) sulfide and selenide upon precipitation by thiocarbamide and selenocarbamide are determined. Potentiometric titration of indium chloride (InCl3) in the concentration range of 0.0001 to 0.100 mol/L by a solution of sodium hydroxide is performed. It is found that the following pH ranges are optimal for In2S3 and In2Se3 film precipitation: from 3.0 to 4.5 and from 9.0 to 14.0. Indium selenide layers 100 to 300 nm thick are prepared on vitroceramic by hydrochemcial precipitation.

Work in progress: radionuclide imaging of indium-111-labeled eosinophils in mice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Runge, V.M.; Rand, T.H.; Clanton, J.A.

1983-05-01

Eosinophils isolated from peritoneal exudates were labeled with indium-111-oxine and injected intravenously into sensitized mice. They became localized at sites of inflammation produced by intradermal injections of schistosomal antigen or Toxocara canis larvae, whereas labeled neutrophils did not. Intense uptake of eosinophils by normal spleen, liver, and bone marrow was noted, with tracer distribution effectively complete by 5 hours after injection. Indium-111-eosinophil studies appear to be quite sensitive to parasitic inflammatory reactions; in contrast, nonspecific inflammation such as that induced by turpentine causes localization of eosinophils, but to a lesser extent. This technique may be useful in the study ofmore » parasitic and allergic disease.« less

Energy level alignment at the interfaces between typical electrodes and nucleobases: Al/adenine/indium-tin-oxide and Al/thymine/indium-tin-oxide

NASA Astrophysics Data System (ADS)

Lee, Younjoo; Lee, Hyunbok; Park, Soohyung; Yi, Yeonjin

2012-12-01

We investigated the interfacial electronic structures of Al/adenine/indium-tin-oxide (ITO) and Al/thymine/ITO using in situ ultraviolet and x-ray photoemission spectroscopy and density functional theory calculations. Adenine shows both an interface dipole and level bending, whereas thymine shows only an interface dipole in contact with ITO. In addition, thymine possesses a larger ionization energy than adenine. These are understood with delocalized π states confirmed with theoretical calculations. For the interface between nucleobases and Al, both nucleobases show a prominent reduction of the electron injection barrier from Al to each base in accordance with a downward level shift.

On the shift of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veleschuk, V. P., E-mail: vvvit@ukr.nd; Vlasenko, A. I.; Kisselyuk, M. P.

2015-08-15

The shift between the maxima of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures is measured at forward and reverse bias depending on the indium content x in the quantum well and on the substrate material (SiC, AuSn/Si, and Al{sub 2}O{sub 3}). It is established that this shift increases as the indium concentration in the In{sub x}Ga{sub 1−x}N layer and mechanical stresses from the substrate increase.

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.

2014-04-01

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Stable indium oxide thin-film transistors with fast threshold voltage recovery

NASA Astrophysics Data System (ADS)

Vygranenko, Yuriy; Wang, Kai; Nathan, Arokia

2007-12-01

Stable thin-film transistors (TFTs) with semiconducting indium oxide channel and silicon dioxide gate dielectric were fabricated by reactive ion beam assisted evaporation and plasma-enhanced chemical vapor deposition. The field-effect mobility is 3.3cm2/Vs, along with an on/off current ratio of 106, and subthreshold slope of 0.5V/decade. When subject to long-term gate bias stress, the TFTs show fast recovery of the threshold voltage (VT) when relaxed without annealing, suggesting that charge trapping at the interface and/or in the bulk gate dielectric to be the dominant mechanism underlying VT instability. Device performance and stability make indium oxide TFTs promising for display applications.

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

DOEpatents

Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

1999-02-16

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Modeling of the absorption properties of Ga1-xInxAs1-yNy/GaAs quantum well structures for photodetection applications

NASA Astrophysics Data System (ADS)

Aissat, A.; Bestam, R.; Alshehri, B.; Vilcot, J. P.

2015-06-01

This work reports on theoretical studies on the GaInNAs material properties (bandgap, lattice mismatch, absorption coefficient) as grown on GaAs substrate. The Band Anti-Crossing (BAC) kṡp 8 × 8 model has been used to determine the influence of indium and nitrogen concentrations on the position of conduction and valence bands. The incorporation of nitrogen at a level lower than 5% causes the split of the conduction band. For indium and nitrogen concentrations of 38% and 3.5%, respectively, the strained bandgap energy is 0.70 eV and the absorption coefficient of indium and nitrogen-rich compounds increases significantly.

Equation of state of liquid Indium under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Huaming, E-mail: huamingli@gatech.edu, E-mail: mo.li@gatech.edu; Li, Mo, E-mail: huamingli@gatech.edu, E-mail: mo.li@gatech.edu; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332

2015-09-15

We apply an equation of state of a power law form to liquid Indium to study its thermodynamic properties under high temperature and high pressure. Molar volume of molten indium is calculated along the isothermal line at 710K within good precision as compared with the experimental data in an externally heated diamond anvil cell. Bulk modulus, thermal expansion and internal pressure are obtained for isothermal compression. Other thermodynamic properties are also calculated along the fitted high pressure melting line. While our results suggest that the power law form may be a better choice for the equation of state of liquids,more » these detailed predictions are yet to be confirmed by further experiment.« less

IOMIDAZOLIUM-BASED INDIUM(III) TETRAHIDES: RECYCLABLE CATALYSTS FOR EFFICIENT COUPLING OF CARBON DIOXIDE WITH EXPOXIDES TO FORM CYCLIC CARBONATES

EPA Science Inventory

The transformation of CO2 an abundant greenhouse gas, into cyclic carbonates by coupling reaction with epoxides is receiving well-deserved attention. A series of imidazolium-based indium tetrahalides, prepared efficiently via microwave assisted reaction of InX3 with [1-R-3-metht...

Understanding the adhesion and optical properties of eutectic metal alloys for solution-processed electronics

NASA Astrophysics Data System (ADS)

Kumar, Prashant; Aggarwal, Shantanu; Narayana, Chandrabhas; Narayan, K. S.

2018-02-01

The role of indium in controlling the adhesion and the optical properties of fusible, low- melting alloys is highlighted in this work. The optical activity of indium-alloy/polymer interface is probed using surface-enhanced Raman spectroscopy, which shows a large increase in polymer Raman modes intensity. Signatures of plasmon and chemically enhanced Raman are visible for more than one polymer. Improvement in adhesion is also reflected in their ability to coat conformally onto the polymer surface resulting in a suitable interface for electrical transport. The electrical characteristics of alloy electrodes, which are printed in ambient conditions, are superior when compared to the thermally evaporated aluminum cathodes. Raman and responsivity measurements indicate that indium (In) forms metal/organic hybrid charge-transfer states at the alloy/polymer interface and assumes a decisive role in controlling the mechanical, optical, and electrical properties of these electrodes. Our studies suggest that the indium present in small quantities (˜5 wt. %) can significantly improve the overall performance of the low-temperature printable eutectic alloy electrodes.

DNA AND THE FINE STRUCTURE OF SYNAPTIC CHROMOSOMES IN THE DOMESTIC ROOSTER (GALLUS DOMESTICUS)

PubMed Central

Coleman, James R.; Moses, Montrose J.

1964-01-01

The indium trichloride method of Watson and Aldridge (38) for staining nucleic acids for electron microscopy was employed to study the relationship of DNA to the structure of the synaptinemal complex in meiotic prophase chromosomes of the domestic rooster. The selectivity of the method was demonstrated in untreated and DNase-digested testis material by comparing the distribution of indium staining in the electron microscope to Feulgen staining and ultraviolet absorption in thicker sections seen with the light microscope. Following staining by indium, DNA was found mainly in the microfibril component of the synaptinemal complex. When DNA was known to have been removed from aldehyde-fixed material by digestion with DNase, indium stainability was also lost. However, staining of the digested material with non-selective heavy metal techniques demonstrated the presence of material other than DNA in the microfibrils and showed that little alteration in appearance of the chromosome resulted from DNA removal. The two dense lateral axial elements of the synaptinemal complex, but not the central one to any extent, also contained DNA, together with non-DNA material. PMID:14228519

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

Study the physical and optoelectronic properties of silver gallium indium selenide AgGaInSe2/Si heterojunction solar cell

NASA Astrophysics Data System (ADS)

Hassun, Hanan K.

2018-05-01

AgGa1-x InxSe2 (AGIS) thin films was deposited on Si and glass substrates by thermal evaporation at RT and different ratios of Indium (x=0.2, 0.5, 0.8). The synthetics properties of AGIS thin film have been examined using X-ray diffraction and AFM. AGIS thin films possessed a polycrystalline tetragonal structure. Average diameter and roughness calculated from AFM images shows an increase in its value with increasing the ratios of Indium. Hall measurements showed n-type conduction with high mobility. The AgGa0.2In0.8Se2 thin film solar cell with a band gap of 1.65eV exhibit a total efficiency of 6.3% with open-circuit voltage Voc 0.38V, short circuit current Jsc 29 mA/cm2, fill factor FF 0.571 and total area 1 cm2. The built-in potential Vbi, concentration of majoritarian carrier ND and depletion width w are definite under different ratios of Indium from C-V amount.

Thermal contact resistance measurement of conduction cooled binary current lead joint block in cryocooler based self field I-V characterization facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kundu, Ananya, E-mail: ananya@ipr.res.in; Das, Subrat Kumar; Agarwal, Anees Bano Pooja

2016-05-23

In the present study thermal resistance of conduction cooled current lead joint block employing two different interfacial material namely AlN sheet and Kapton Film have been studied in the temperature range 5K-35K. In each case, the performance of different interlayer materials e.g. Indium foil for moderately pressurized contacts (contact pressure <1 MPa), and Apiezon N Grease, GE varnish for low pressurized contact (contact pressure <1 MPa) is studied. The performances of AlN joint with Indium foil and with Apeizon N Grease are studied and it is observed that the contact resistance reduces more with indium foil as compared to greasedmore » contact. The contact resistance measurements of Kapton film with Apiezon N grease and with GE varnish were also carried out in the same temperature range. A comparative study of AlN joint with Indium foil and Kapton with GE varnish as filler material is carried out to demonstrate better candidate material among Kapton and AlN for a particular filler material in the same temperature range.« less

Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

NASA Astrophysics Data System (ADS)

Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu, Jiangtao; Wakeham, William A.

2012-09-01

The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

Heat transfer at a sapphire - indium interface in the 30 mK - 300 mK temperature range

NASA Astrophysics Data System (ADS)

Liberadzka, J.; Koettig, T.; Bremer, J.; van der Post, C. C. W.; ter Brake, H. J. M.

2017-02-01

Within the framework of the AEgIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) project a direct measurement of the Earth’s gravitational acceleration on antihydrogen will be carried out. In order to obtain satisfactory precision of the measurement, the thermal movement of the particles should be reduced. Therefore a Penning trap, which is used to trap antiprotons and create antihydrogen, will be placed on a mixing chamber of an especially designed dilution refrigerator. The trap consists of 10 electrodes, which need to be electrically insulated, but thermally anchored. To ensure that the trap remains at a temperature below 100 mK, the heat transfer at the metallic-dielectric boundary is investigated. A copper - indium - sapphire - indium - copper sandwich setup was mounted on the CERN Cryolab dilution refrigerator. Keeping the mixing chamber at a constant low temperature in the range of 30 mK to 300 mK, steady-state measurements with indium in normal conducting and superconducting states have been performed. Obtained results along with a precise description of our setup are presented.

Amorphous Silicate Smokes as Catalysts for the Production of Complex Organic Species in the Primitive Solar Nebula

NASA Technical Reports Server (NTRS)

Nuth, J. A., III; Hill, H. G. M.

2002-01-01

Amorphous Mg-silicates are excellent Fischer-Tropsch catalysts that convert H2 and CO into hydrocarbons almost as well as Fe-silicates. Mg-silicates do not catalyze formation of ammonia. N is incorporated into the organics if CO, N2 and H2 are used. Additional information is contained in the original extended abstract.

FE and MG Isotopic Analyses of Isotopically Unusual Presolar Silicate Grains

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Messenger, S.; Ito, M.; Rahman, Z.

2011-01-01

Interstellar and circumstellar silicate grains are thought to be Mg-rich and Fe-poor, based on astronomical observations and equilibrium condensation models of silicate dust formation in stellar outflows. On the other hand, presolar silicates isolated from meteorites have surprisingly high Fe contents and few Mg-rich grains are observed. The high Fe contents in meteoritic presolar silicates may indicate they formed by a non-equilibrium condensation process. Alternatively, the Fe in the stardust grains could have been acquired during parent body alteration. The origin of Fe in presolar silicates may be deduced from its isotopic composition. Thus far, Fe isotopic measurements of presolar silicates are limited to the Fe-54/Fe-56 ratios of 14 grains. Only two slight anomalies (albeit solar within error) were observed. However, these measurements suffered from contamination of Fe from the adjacent meteorite matrix, which diluted any isotopic anomalies. We have isolated four presolar silicates having unusual O isotopic compositions by focused ion beam (FIB) milling and obtained their undiluted Mg and Fe isotopic compositions. These compositions help to identify the grains stellar sources and to determine the source of Fe in the grains.

Mineralogical Studies of a Highly O-17-Depleted and an O-17-Rich Presolar Grain from the Acfer 094 Meteorite

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Keller, L. P.; Rahman, Z.; Messenger, S.

2012-01-01

Silicate grains are the most abundant condensate around O-rich evolved stars, including red giants, supernovae (SNe) and binary systems. These grains have been identified in abundance in primitive meteorites and interplanetary dust particles [1,2]. Astronomical observations of the silicate spectroscopic features around circumstellar disks indicate that most silicates are amorphous olivine-like grains, though some sources show a large crystalline portion [3]. Fewer astronomical observations of SN and nova silicates exist, but amorphous Mg-rich grains predominate [4,5]. The laboratory analysis of presolar silicates by transmission electron microscopy (TEM) offers more details on the structure and chemistry of individual grains. These studies provide information on the physical and chemical conditions of the parent stellar atmosphere during grain condensation. Moreover, be-cause silicates are susceptible to secondary alteration, processing events succeeding condensation can be traced. Thus far, similar microstructures have been observed for silicates that condensed in SN outflows and in the envelopes of asymptotic giant branch (AGB) stars, but not as many of the comparatively rare SN grains have been analyzed. Here we examine the mineralogies of two presolar silicate grains having different origins.

Immune stimulation following dermal exposure to unsintered indium tin oxide

PubMed Central

Brock, Kristie; Anderson, Stacey E.; Lukomska, Ewa; Long, Carrie; Anderson, Katie; Marshall, Nikki; Meade, B. Jean

2015-01-01

In recent years, several types of pulmonary pathology, including alveolar proteinosis, fibrosis, and emphysema, have been reported in workers in the indium industry. To date, there remains no clear understanding of the underlying mechanism(s). Pulmonary toxicity studies in rats and mice have demonstrated the development of mediastinal lymph node hyperplasia and granulomas of mediastinal lymph nodes and bronchus-associated lymphoid tissues following exposure to indium tin oxide. Given the association between exposure to other metals and the development of immune-mediated diseases, these studies were undertaken to begin to investigate the immuno-modulatory potential of unsintered indium tin oxide (uITO) in a mouse model. Using modifications of the local lymph node assay, BALB/c mice (five animals/group) were exposed topically via intact or breached skin or injected intradermally at the base of the ear pinnae with either vehicle or increasing concentrations 2.5–10% uITO (90:10 indium oxide/tin oxide, particle size <50 nm). Dose-responsive increases in lymphocyte proliferation were observed with a calculated EC3 of 4.7% for the intact skin study. Phenotypic analysis of draining lymph node cells following intradermal injection with 5% uITO yielded a profile consistent with a T-cell-mediated response. These studies demonstrate the potential for uITO to induce sensitization and using lymphocyte proliferation as a biomarker of exposure, and demonstrate the potential for uITO to penetrate both intact and breached skin. PMID:24164313

Neutron diffraction and thermoelectric properties of indium filled In x Co 4 Sb 12 ( x=0.05, 0.2) and indium cerium filled Ce 0.05 In 0.1 Co 4 Sb 12 skutterudites: Neutron diffraction and thermoelectric properties of In/Ce skutterudites

DOE PAGES

Sesselmann, Andreas; Klobes, Benedikt; Dasgupta, Titas; ...

2015-09-25

The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions In xCo 4Sb 12 (x= 0.05, 0.2) and Ce 0.05In 0.1Co 4Sb 12 as a function of temperature (12- 300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Our results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that amore » considerable amount of indium is lost during synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. The double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass in our experiment. Finally, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.« less

Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures

NASA Astrophysics Data System (ADS)

Sears, Jasmine Soria

The fields of telecommunications and optoelectronics are under constant pressure to shrink devices and reduce power consumption. Micro-scale photonic and plasmonic structures can trap light and enhance the brightness of active emitters; thus, these types of structures are promising avenues to accomplishing the goals of miniaturization and efficiency. A deeper understanding of specific structures is important in order to gauge their suitability for specific applications. In this dissertation, two types of microstructures are explored: one-dimensional silicon photonic crystals and self-assembled indium islands. This dissertation will provide novel characterization of these structures and a description of how to utilize or compensate for the observed features. A photonic crystal can act as a tiny resonator for certain wavelengths, making it a promising structure for applications that require extremely small lasers. However, because of silicon’s indirect bandgap, a silicon photonic crystal cavity would require the addition of an active emitter to function as a light source. Attempts to incorporate erbium into these cavities, and the observation of an unusual coupling phenomenon, will be discussed. Self-assembled indium islands are plasmonic structures that can be grown via molecular beam epitaxy. In theory, these islands should be pure indium nanoantennas on top of a smooth gallium arsenide substrate. In practice, the component materials are less segregated than predicted, giving rise to unexpected hollow dome shapes and a sub-surface indium layer. Although these features were not an intended result of indium island growth, they provide information regarding the island formation process and potentially contribute additional applications.

Comment on "The shape and composition of interstellar silicate grains"

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley, J P; Ishii, H

2007-09-27

In the paper entitled 'The shape and composition of interstellar silicate grains' (A & A, 462, 667-676 (2007)), Min et al. explore non-spherical grain shape and composition in modeling the interstellar 10 and 20 {micro}m extinction features. This progression towards more realistic models is vitally important to enabling valid comparisons between dust observations and laboratory measurements. Min et al. proceed to compare their model results with GEMS (glass with embedded metals and sulfides) from IDPs (interplanetary dust particles) and to discuss the nature and origin of GEMS. Specifically, they evaluate the hypothesis of Bradley (1994) that GEMS are interstellar (IS)more » amorphous silicates. From a comparison of the mineralogy, chemical compositions, and infrared (IR) spectral properties of GEMS with their modeling results, Min et al. conclude: 'GEMS are, in general, not unprocessed leftovers from the diffuse ISM'. This conclusion is based, however, on erroneous and incomplete GEMS data. It is important to clarify first that Bradley (1994) never proposed that GEMS are unprocessed leftovers from the diffuse ISM, nor did he suggest that individual subnanogram mass GEMS are a representative sampling of the enormous mass of silicates in the diffuse ISM. Bradley (1994) simply showed that GEMS properties are consistent with those of IS amorphous silicates. It is widely accepted that circumstellar outflows are important sources of IS silicates, and whether GEMS are processed or not, the circumstellar heritage of some has been rigorously confirmed through measurements of non-solar oxygen (O) isotope abundances (Messenger et al., 2003; Floss et al., 2006). Keller et al. (2000) assert that even GEMS without detectable O isotope anomalies are probably also extrasolar IS silicates because they are embedded in carbonaceous material with non-solar D/H isotopic composition. (Much of the silicate dust in the ISM may be isotopically homogenized (Zhukovska et al., 2007)). Recent measurements show that the elemental compositions of GEMS with non-solar isotopic compositions are 'remarkably similar' to those with solar isotopic compositions (Keller & Messenger, 2007). About 80% of all isotopically anomalous IS silicates identified to date are GEMS with detectable and variable O isotopic memories of a circumstellar ancestry (Messenger, 2007). Bradley (1999) proposed that GEMS are IS silicates from 'a presolar interstellar molecular cloud, presumably the local molecular cloud from which the solar system formed'. Although based on incorrect data (detailed below), Min et al. propose that most GEMS actually formed in the presolar molecular cloud, and they further propose that none of them are IS silicates. IS silicate sources include molecular clouds, circumstellar outflows, supernovae, and even recently discovered black hole winds (Molster & Waters; 2003; Jones, 2005; Zhukovska et al. 2007; Markwick-Kemper et al. 2007). The average IS 10 {micro}m extinction feature observed along lines of sight towards the galactic center (modeled by Min et al.) presumably provides a good average for IS silicates, but it cannot distinguish amorphous silicates originating in the presolar molecular cloud from amorphous silicates originating in other interstellar molecular clouds or indeed other sources of amorphous IS silicates. Even if most GEMS accreted in the presolar molecular cloud, then they must also be representatives of some portion of the IS amorphous silicate population. Laboratory heating experiments indicate it is highly unlikely that GEMS were modified in a protoplanetary accretion disk environment (Brownlee et al. 2005). In summary, Min et al. conclude from their modeling of the shape and composition of IS silicates that the properties of GEMS are generally inconsistent with those of IS silicates. First, it has been rigorously confirmed via ion microprobe measurements that some GEMS are indeed presolar IS silicates. Second, regardless of whether GEMS, or components of GEMS, originated in presolar circumstellar outflows or a presolar molecular cloud they are all IS silicates. Third, key GEMS data reported in Min et al. are inaccurate. Had complete isotopic, chemical, mineralogical and infrared (IR) spectral properties of GEMS been considered, Min et al. may have concluded that the properties of GEMS, although not an exact match, are generally consistent with those of amorphous silicates in the ISM.« less

Cooked GEMS - Insights into the Hot Origins of Crystalline Silicates in Circumstellar Disks and the Cold Origins of GEMS

NASA Technical Reports Server (NTRS)

Brownlee, D. E.; Joswiak, D. J.; Bradley, J. P.; Matrajt, G.; Wooden, D. H.

2005-01-01

The comparison of interstellar, circumstellar and primitive solar nebula silicates has led to a significant conundrum in the understanding of the nature of solid materials that begin the planet forming processes. Crystalline silicates are found in circumstellar regions around young stars and also evolved stars ejecting particles into the interstellar medium (ISM) but they are not seen in the interstellar medium itself, the source material for star and planet formation. Crystalline silicates are minor to major components of all known early solar system materials that have been examined as meteorites or interplanetary dust samples. The strong presence of Mg-rich crystalline silicates in Oort cloud comets and their minor presence in some Kuiper belt comets is also indicated by 11.2 m peak in approx. 10 microns "silicate" infrared feature. This evidence strongly indicates that Mg-rich crystalline silicates were abundant components of the solar nebula disk out to at least 10 AU, and present out to 30 AU.

Constraints on cosmic silicates

NASA Astrophysics Data System (ADS)

Ossenkopf, V.; Henning, Th.; Mathis, J. S.

1992-08-01

Observational determinations of opacities of circumstellar silicates, relative to the peak value near 10 microns, are used to estimate the optical constants n and k, the real and imaginary parts of the index of refraction. Circumstellar dust is modified by processing within the interstellar medium. This leads to higher band strengths and a somewhat larger ratio of the opacities at the 18 and 10-micron peaks, compared with circumstellar silicates. By using an effective-medium theory, we calculate the effects of small spherical inclusions of various materials (various oxides, sulfides, carbides, amorphous carbon, and metallic iron) upon silicate opacities. Some of these can increase the absorption coefficient k in the 2-8 micron region appreciably, as is needed to reconcile laboratory silicate opacities with observations of both the interstellar medium and envelopes around late-type stars. We give tables of two sets of optical constants for warm oxygen-deficient and cool oxygen-rich silicates, representative for circumstellar and interstellar silicates. The required opacity in the 2-8 micron region is provided by iron and magnetite.

Battery components employing a silicate binder

DOEpatents

Delnick, Frank M [Albuquerque, NM; Reinhardt, Frederick W [Albuquerque, NM; Odinek, Judy G [Rio Rancho, NM

2011-05-24

A battery component structure employing inorganic-silicate binders. In some embodiments, casting or coating of components may be performed using aqueous slurries of silicates and electrode materials or separator materials.

SOFT X-RAY IRRADIATION OF SILICATES: IMPLICATIONS FOR DUST EVOLUTION IN PROTOPLANETARY DISKS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciaravella, A.; Cecchi-Pestellini, C.; Jiménez-Escobar, A.

2016-09-01

The processing of energetic photons on bare silicate grains was simulated experimentally on silicate films submitted to soft X-rays of energies up to 1.25 keV. The silicate material was prepared by means of a microwave assisted sol–gel technique. Its chemical composition reflects the Mg{sub 2}SiO{sub 4} stoichiometry with residual impurities due to the synthesis method. The experiments were performed using the spherical grating monochromator beamline at the National Synchrotron Radiation Research Center in Taiwan. We found that soft X-ray irradiation induces structural changes that can be interpreted as an amorphization of the processed silicate material. The present results may havemore » relevant implications in the evolution of silicate materials in X-ray-irradiated protoplanetary disks.« less

Identification of an Extremely 180-Rich Presolar Silicate Grain in Acfer 094

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Messenger, S.

2009-01-01

Presolar silicate grains have been abundantly identified since their first discovery less than a decade ago [1,2,3]. The O isotopic compositions of both silicate and oxide stardust indicate the vast majority (>90%) condensed around Orich asymptotic giant branch (AGB) stars. Though both presolar phases have average sizes of 300 nm, grains larger than 1 m are extremely uncommon for presolar silicates. Thus, while numerous isotopic systems have been measured in presolar oxide grains [4], very few isotopic analyses for presolar silicates exist outside of O and Si [2,5]. And still, these measurements suffer from isotopic dilution with surrounding matrix material [6]. We conduct a search for presolar silicates in the primitive carbonaceous chondrite Acfer 094 and in some cases obtain high spatial resolution, high precision isotopic ratios.

Optimization of Indium Bump Morphology for Improved Flip Chip Devices

NASA Technical Reports Server (NTRS)

Jones, Todd J.; Nikzad, Shouleh; Cunningham, Thomas J.; Blazejewski, Edward; Dickie, Matthew R.; Hoenk, Michael E.; Greer, Harold F.

2011-01-01

Flip-chip hybridization, also known as bump bonding, is a packaging technique for microelectronic devices that directly connects an active element or detector to a substrate readout face-to-face, eliminating the need for wire bonding. In order to make conductive links between the two parts, a solder material is used between the bond pads on each side. Solder bumps, composed of indium metal, are typically deposited by thermal evaporation onto the active regions of the device and substrate. While indium bump technology has been a part of the electronic interconnect process field for many years and has been extensively employed in the infrared imager industry, obtaining a reliable, high-yield process for high-density patterns of bumps can be quite difficult. Under the right conditions, a moderate hydrogen plasma exposure can raise the temperature of the indium bump to the point where it can flow. This flow can result in a desirable shape where indium will efficiently wet the metal contact pad to provide good electrical contact to the underlying readout or imager circuit. However, it is extremely important to carefully control this process as the intensity of the hydrogen plasma treatment dramatically affects the indium bump morphology. To ensure the fine-tuning of this reflow process, it is necessary to have realtime feedback on the status of the bumps. With an appropriately placed viewport in a plasma chamber, one can image a small field (a square of approximately 5 millimeters on each side) of the bumps (10-20 microns in size) during the hydrogen plasma reflow process. By monitoring the shape of the bumps in real time using a video camera mounted to a telescoping 12 magnifying zoom lens and associated optical elements, an engineer can precisely determine when the reflow of the bumps has occurred, and can shut off the plasma before evaporation or de-wetting takes place.

A view of aqueous electrochemical carbon dioxide reduction to formate at indium electrodes, and the reversible electrodeposition of silver in ionic liquids through the lens of fundamental surface science

NASA Astrophysics Data System (ADS)

Detweiler, Zachary M.

Two systems were studied using in situ measurement techniques, demonstrating the importance of creative experimental design. The electroreduction of CO2 at heterogeneous indium electrodes in aqueous solution was analyzed by cyclic voltammetry. Bulk electrolyses showed that increased indium oxide presence prior to electrolysis improved the Faradaic efficiency of CO 2 reduction to formate in 0.5 M K2SO2 aqueous solutions at a pH of 4.4. In order to more accurately assign speciation at the electrode surface ex situ O2 and H2O dosing of metallic indium under UHV was studied with XPS, HREELS and TPD. Ambient pressure XPS showed that the ratio of oxide to hydroxide at the indium interface is strongly dependent on the partial pressure of water; decreasing as P(H2O) increases. Using this information, a qualitative picture of the indium interface could be generated. In situ ATR-FTIR with an indium thin film as the working electrode showed that bulk oxide quickly reduces with applied potential, but an interfacial oxide is still present at high reductive overpotential. Additionally, an adsorbed carbonate at the thin film interface was observed upon introducing CO 2 to the cell. The implication of a surface bound carbonate as the CO 2 reduction intermediate draws on a mechanism that has not previously been discussed in the electrochemical reduction of CO2. The previous study of this mechanism from Ficscher-Tropsch literature helps to predict the further reduced products found at more electropositive metals, such as copper or magnesium, the latter of which is described here. Additionaly described here is a series of ILs that were employed as electrolyte for reversible silver deposition. BMIM N(TfO)2 was found to be the most promising of those studied, intrinsically giving a more uniform deposit that was bright and reversible. Deposit formation was studied using SEM and EDX as a function of deposition potential and deposition time. In situ reflectometry was employed to get a direct measure of deposit reflectivity on ITO coated glass as a function of time. A promising device system has been elucidated as a result and future considerations have been identified from coincident electrochemical and spectroscopic measurements.

A review of bioactive silicate ceramics.

PubMed

Wu, Chengtie; Chang, Jiang

2013-06-01

Silicate bioceramics, as a new family of biomaterials, have received significant attention in their application to hard tissue regeneration. Some silicate bioceramics have shown excellent apatite mineralization in simulated body fluids and their ionic products have been shown to enhance the proliferation, osteogenic differentiation and gene expression of stem cells. In this paper, we review the advances in the research of silicate system bioceramics, including preparation methods, mechanical strength, apatite mineralization, dissolution and in vitro and in vivo biological properties. The biological properties and the corresponding mechanism have been highlighted. A look forward to the application of silicate bioceramics to bone regeneration is further suggested.

Pt, Au, Pd and Ru Partitioning Between Mineral and Silicate Melts: The Role of Metal Nanonuggets

NASA Technical Reports Server (NTRS)

Malavergne, V.; Charon, E.; Jones, J.; Agranier, A.; Campbell, A.

2012-01-01

The partition coefficients of Pt and other Pt Group Elements (PGE) between metal and silicate D(sub Metal-Silicate) and also between silicate minerals and silicate melts D(sub Metal-Silicate) are among the most challenging coefficients to obtain precisely. The PGE are highly siderophile elements (HSE) with D(sub Metal-Silicate) >10(exp 3) due to the fact that their concentrations in silicates are very low (ppb to ppt range). Therefore, the analytical difficulty is increased by the possible presence of HSE-rich-nuggets in reduced silicate melts during experiments). These tiny HSE nuggets complicate the interpretation of measured HSE concentrations. If the HSE micro-nuggets are just sample artifacts, then their contributions should be removed before calculations of the final concentration. On the other hand, if they are produced during the quench, then they should be included in the analysis. We still don't understand the mechanism of nugget formation well. Are they formed during the quench by precipitation from precursor species dissolved homogeneously in the melts, or are they precipitated in situ at high temperature due to oversaturation? As these elements are important tracers of early planetary processes such as core formation, it is important to take up this analytical and experimental challenge. In the case of the Earth for example, chondritic relative abundances of the HSE in some mantle xenoliths have led to the concept of the "late veneer" as a source of volatiles (such as water) and siderophiles in the silicate Earth. Silicate crystal/liquid fractionation is responsible for most, if not all, the HSE variation in the martian meteorite suites (SNC) and Pt is the element least affected by these fractionations. Therefore, in terms of reconstructing mantle HSE abundances for Mars, Pt becomes a very important player. In the present study, we have performed high temperature experiments under various redox conditions in order to determine the abundances of Pt, Au, Ru and Pd in minerals (olivine and diopside) and in silicate melts, but also to characterize the sizes, density and chemistry of HSE nuggets when present in the samples.

Experimental evidence for the absence of iron isotope fractionation between metal and silicate liquids at 1 GPa and 1250-1300 °C and its cosmochemical consequences

NASA Astrophysics Data System (ADS)

Hin, Remco C.; Schmidt, Max W.; Bourdon, Bernard

2012-09-01

Iron isotope fractionation during metal-silicate differentiation has been proposed as a cause for differences in iron isotope compositions of chondrites, iron meteorites and the bulk silicate Earth. Stable isotope fractionation, however, rapidly decreases with increasing temperature. We have thus performed liquid metal-liquid silicate equilibration experiments at 1250-1300 °C and 1 GPa to address whether Fe isotope fractionation is resolvable at the lowest possible temperatures for magmatic metal-silicate differentiation. A centrifuging piston cylinder apparatus enabled quantitative metal-silicate segregation. Elemental tin or sulphur was used in the synthetic metal-oxide mixtures to lower the melting temperature of the metal. The analyses demonstrate that eight of the 10 experimental systems equilibrated in a closed isotopic system, as was assessed by varying run durations and starting Fe isotope compositions. Statistically significant iron isotope fractionation between quenched metals and silicates was absent in nine of the 10 experiments and all 10 experiments yield an average metal-silicate fractionation factor of 0.01 ± 0.04‰, independent of whether graphite or silica glass capsules were used. This implies that Fe isotopes do not fractionate during low pressure metal-silicate segregation under magmatic conditions. In large bodies such as the Earth, fractionation between metal and high pressure (>20 GPa) silicate phases may still be a possible process for equilibrium fractionation during metal-silicate differentiation. However, the 0.07 ± 0.02‰ heavier composition of bulk magmatic iron meteorites relative to the average of bulk ordinary/carbonaceous chondrites cannot result from equilibrium Fe isotope fractionation during core segregation. The up to 0.5‰ lighter sulphide than metal fraction in iron meteorites and in one ordinary chondrite can only be explained by fractionation during subsolidus processes.

The effect of melt composition on metal-silicate partitioning of siderophile elements and constraints on core formation in the angrite parent body

NASA Astrophysics Data System (ADS)

Steenstra, E. S.; Sitabi, A. B.; Lin, Y. H.; Rai, N.; Knibbe, J. S.; Berndt, J.; Matveev, S.; van Westrenen, W.

2017-09-01

We present 275 new metal-silicate partition coefficients for P, S, V, Cr, Mn, Co, Ni, Ge, Mo, and W obtained at moderate P (1.5 GPa) and high T (1683-1883 K). We investigate the effect of silicate melt composition using four end member silicate melt compositions. We identify possible silicate melt dependencies of the metal-silicate partitioning of lower valence elements Ni, Ge and V, elements that are usually assumed to remain unaffected by changes in silicate melt composition. Results for the other elements are consistent with the dependence of their metal-silicate partition coefficients on the individual major oxide components of the silicate melt composition suggested by recently reported parameterizations and theoretical considerations. Using multiple linear regression, we parameterize compiled metal-silicate partitioning results including our new data and report revised expressions that predict their metal-silicate partitioning behavior as a function of P-T-X-fO2. We apply these results to constrain the conditions that prevailed during core formation in the angrite parent body (APB). Our results suggest the siderophile element depletions in angrite meteorites are consistent with a CV bulk composition and constrain APB core formation to have occurred at mildly reducing conditions of 1.4 ± 0.5 log units below the iron-wüstite buffer (ΔIW), corresponding to a APB core mass of 18 ± 11%. The core mass range is constrained to 21 ± 8 mass% if light elements (S and/or C) are assumed to reside in the APB core. Incorporation of light elements in the APB core does not yield significantly different redox states for APB core-mantle differentiation. The inferred redox state is in excellent agreement with independent fO2 estimates recorded by pyroxene and olivine in angrites.

Sulfur Saturation Limits in Silicate Melts and their Implications for Core Formation Scenarios for Terrestrial Planets

NASA Technical Reports Server (NTRS)

Holzheid, Astrid; Grove, Timothy L.

2002-01-01

This study explores the controls of temperature, pressure, and silicate melt composition on S solubility in silicate liquids. The solubility of S in FeO-containing silicate melts in equilibrium with metal sulfide increases significantly with increasing temperature but decreases with increasing pressure. The silicate melt structure also exercises a control on S solubility. Increasing the degree of polymerization of the silicate melt structure lowers the S solubility in the silicate liquid. The new set of experimental data is used to expand the model of Mavrogenes and O'Neill(1999) for S solubility in silicate liquids by incorporating the influence of the silicate melt structure. The expected S solubility in the ascending magma is calculated using the expanded model. Because the negative pressure dependence of S solubility is more influential than the positive temperature dependence, decompression and adiabatic ascent of a formerly S-saturated silicate magma will lead to S undersaturation. A primitive magma that is S-saturated in its source region will, therefore, become S-undersaturated as it ascends to shallower depth. In order to precipitate magmatic sulfides, the magma must first cool and undergo fractional crystallization to reach S saturation. The S content in a metallic liquid that is in equilibrium with a magma ocean that contains approx. 200 ppm S (i.e., Earth's bulk mantle S content) ranges from 5.5 to 12 wt% S. This range of S values encompasses the amount of S (9 to 12 wt%) that would be present in the outer core if S is the light element. Thus, the Earth's proto-mantle could be in equilibrium (in terms of the preserved S abundance) with a core-forming metallic phase.

Lattice thermal conductivity of silicate glasses at high pressures

NASA Astrophysics Data System (ADS)

Chang, Y. Y.; Hsieh, W. P.

2016-12-01

Knowledge of the thermodynamic and transport properties of magma holds the key to understanding the thermal evolution and chemical differentiation of Earth. The discovery of the remnant of a deep magma ocean above the core mantle boundary (CMB) from seismic observations suggest that the CMB heat flux would strongly depend on the thermal conductivity, including lattice (klat) and radiative (krad) components, of dense silicate melts and major constituent minerals around the region. Recent measurements on the krad of dense silicate glasses and lower-mantle minerals show that krad of dense silicate glasses could be significantly smaller than krad of the surrounding solid mantle phases, and therefore the dense silicate melts would act as a thermal insulator in deep lower mantle. This conclusion, however, remains uncertain due to the lack of direct measurements on the lattice thermal conductivity of silicate melts under relevant pressure-temperature conditions. Besides the CMB, magmas exist in different circumstances beneath the surface of the Earth. Chemical compositions of silicate melts vary with geological and geodynamic settings of the melts and have strong influences on their thermal properties. In order to have a better view of heat transport within the Earth, it is important to study compositional and pressure dependences of thermal properties of silicate melts. Here we report experimental results on lattice thermal conductivities of silicate glasses with basaltic and rhyolitic compositions up to Earth's lower mantle pressures using time-domain thermoreflectance coupled with diamond-anvil cell techniques. This study not only provides new data for the thermal conductivity of silicate melts in the Earth's deep interior, but is crucial for further understanding of the evolution of Earth's complex internal structure.

Superlattices and Semiconductor/Semiconductor Interfaces.

DTIC Science & Technology

1984-01-17

the electron effective ’J. N. Schulman and T. C. Mc"il AppI. Phys. Lett 34. 66311979). masse in the snuff band-gap alloys, suggesting reducedp- 3.P...et al. " have made DLTS measurements on n-type, , lead to the loss of electrically active indium through the for- indium doped CdTe films grown on BaF

Direct synthesis of alkenyl iodides via indium-catalyzed iodoalkylation of alkynes with alcohols and aqueous HI.

PubMed

Wu, Chao; Wang, Zheng; Hu, Zhan; Zeng, Fei; Zhang, Xing-Yu; Cao, Zhong; Tang, Zilong; He, Wei-Min; Xu, Xin-Hua

2018-05-02

A convenient and efficient indium-catalyzed approach to synthesize alkenyl iodides has been developed through direct iodoalkylation of alkynes with alcohols and aqueous HI under mild conditions. This catalytic protocol offers an attractive approach for the synthesis of a diverse range of alkenyl iodides in good to excellent yields.

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

DOEpatents

Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

1998-08-08

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction

NASA Astrophysics Data System (ADS)

Sasaki, Takuo; Takahasi, Masamitu

2017-06-01

In this study, we analyzed the influence of indium supply on the growth dynamics of gold-catalyzed InGaAs nanowires by in situ synchrotron X-ray diffraction. A high In/Ga supply ratio results in strong size inhomogeneity of Au particles and interrupts the nanowire growth at a certain point of time. Based on the experimental results, we discussed the state of Au catalysts with high indium content during the nanowire growth. We found that a growth temperature below the eutectic temperature is essential to avoid the growth interruption and maintain the nanowire growth. The high In/Ga ratio necessitates accurate size control of Au particles before growth for further improvement of the nanowire growth.

Indium nanowires at the silicon surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru; Sheglov, D. V.; Latyshev, A. V.

2016-07-15

Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. The transfer of indium from the probe of the atomic-force microscope onto the silicon surface is initiated by applying a potential between the probe and the surface as they approach each other to spacings, at which the mutual repulsive force is ~10{sup –7} N. The conductivity of the nanowires ranges from 7 × 10{sup –3} to 4 × 10{sup –2} Ω cm, which is several orders ofmore » magnitude lower than that in the case of the alternative technique of heat transfer.« less

One-Step Synthesis of Monodisperse In-Doped ZnO Nanocrystals

NASA Astrophysics Data System (ADS)

Wang, Qing Ling; Yang, Ye Feng; He, Hai Ping; Chen, Dong Dong; Ye, Zhi Zhen; Jin, Yi Zheng

2010-05-01

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the products indicate the incorporation of indium into the host ZnO lattices. The individual nanocrystals with cubic structures were observed in the 5% In-ZnO reaction, due to the relatively high reactivity of indium precursors. Our study would provide further insights for the growth of doped oxide nanocrystals, and deepen the understanding of doping process in colloidal nanocrystal syntheses.

Superior local conductivity in self-organized nanodots on indium-tin-oxide films induced by femtosecond laser pulses.

PubMed

Wang, Chih; Wang, Hsuan-I; Tang, Wei-Tsung; Luo, Chih-Wei; Kobayashi, Takayoshi; Leu, Jihperng

2011-11-21

Large-area surface ripple structures of indium-tin-oxide films, composed of self-organized nanodots, were induced by femtosecond laser pulses, without scanning. The multi-periodic spacing (~800 nm, ~400 nm and ~200 nm) was observed in the laser-induced ripple of ITO films. The local conductivity of ITO films is significantly higher, by approximately 30 times, than that of the as-deposited ITO films, due to the formation of these nanodots. Such a significant change can be ascribed to the formation of indium metal-like clusters, which appear as budges of ~5 nm height, due to an effective volume increase after breaking the In-O to form In-In bonding. © 2011 Optical Society of America

Silicate Inclusions in the Kodaikanal IIE Iron Meteorite

NASA Technical Reports Server (NTRS)

Kurat, G.; Varela, M. E.; Zinner, E.

2005-01-01

Silicate inclusions in iron meteorites display an astonishing chemical and mineralogical variety, ranging from chondritic to highly fractionated, silica- and alkali-rich assemblages. In spite of this, their origin is commonly considered to be a simple one: mixing of silicates, fractionated or unfractionated, with metal. The latter had to be liquid in order to accommodate the former in a pore-free way which all models accomplish by assuming shock melting. II-E iron meteorites are particularly interesting because they contain an exotic zoo of silicate inclusions, including some chemically strongly fractionated ones. They also pose a formidable conundrum: young silicates are enclosed by very old metal. This and many other incompatibilities between models and reality forced the formulation of an alternative genetic model for irons. Here we present preliminary findings in our study of Kodaikanal silicate inclusions.

The Abundance and Distribution of Presolar Materials in Cluster IDPS

NASA Technical Reports Server (NTRS)

Messenger, Scott; Keller, Lindsay; Nakamura-Messenger, Keiko; Ito, Motoo

2007-01-01

Presolar grains and remnants of interstellar organic compounds occur in a wide range of primitive solar system materials, including meteorites, interplanetary dust particles (IDPs), and comet Wild-2 samples. Among the most abundant presolar phases are silicate stardust grains and molecular cloud material. However, these materials have also been susceptible to destruction and alteration during parent body and nebular processing. In addition to their importance as direct samples of remote and ancient astrophysical environments, presolar materials thus provide a measure of how well different primitive bodies have preserved the original solar system starting materials. The matrix normalized abundances of presolar silicate grains in meteorites range from 20 ppm in Semarkona and Bishunpur to 170 ppm for Acfer 094. The lower abundances of presolar silicates in Bishunpur and Semarkona has been ascribed to the destruction of presolar silicates during aqueous processes. Presolar silicates appear to be significantly more abundant in anhydrous IDPs, possibly because these materials did not experience parent body hydrothermal alteration. Among IDPs the estimated abundances of presolar silicates vary by more than an order of magnitude, from 480 to 5500 ppm. The wide disparity in the abundances of presolar silicates of IDPs may be a consequence of the relatively small total area analyzed in those studies and the fine grain sizes of the IDPs. Alternatively, there may be a wide range in presolar silicate abundances between different IDPs. This view is supported by the observation that 15N-rich IDPs have higher presolar silicate abundances than those with isotopically normal N.

Crystal Structure and Chemical Composition of a Presolar Silicate from the Queen Elizabeth Range 99177 Meteorite

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Keller, L. P.; Rahman, Z.; Messenger, S.

2013-01-01

Mineral characterization of presolar silicate grains, the most abundant stardust phase, has provided valuable information about the formation conditions in circumstellar environments and in super-nova (SN) outflows. Spectroscopic observations of dust around evolved stars suggest a majority of amor-phous, Mg-rich olivine grains, but crystalline silicates, most of which are pyroxene, have also been observed [1]. The chemical compositions of hundreds of presolar silicates have been determined by Auger spectroscopy and reveal high Fe contents and nonstoichiometric compositions intermediate to olivine and pyroxene [2-6]. The unexpectedly high Fe contents can partly be attributed to secondary alteration on the meteorite parent bodies, as some grains have Fe isotopic anomalies from their parent stellar source [7]. Only about 35 presolar silicates have been studied for their mineral structures and chemical compositions by transmission electron microscopy (TEM). These grains display a wide range of compositions and structures, including crystalline forsterite, crystalline pyroxene, nanocrystalline grains, and a majority of amorphous nonstoichiometric grains. Most of these grains were identified in the primitive Acfer 094 meteorite. Presolar silicates from this meteorite show a wide range of Fe-contents, suggestive of secondary processing on the meteorite parent body. The CR chondrite QUE 99177 has not suffered as much alteration [8] and displays the highest presolar silicate abundance to date among carbonaceous chondrites [3, 6]. However, no mineralogical studies of presolar silicates from this meteorite have been performed. Here we examine the mineralogy of a presolar silicate from QUE 99177.

Partial Melting of the Indarch (EH4) Meteorite : A Textural, Chemical and Phase Relations View of Melting and Melt Migration

NASA Technical Reports Server (NTRS)

McCoy, Timothy J.; Dickinson, Tamara L.; Lofgren, Gary E.

2000-01-01

To Test whether Aubrites can be formed by melting of enstatite Chondrites and to understand igneous processes at very low oxygen fugacities, we have conducted partial melting experiments on the Indarch (EH4) chondrite at 1000-1500 C. Silicate melting begins at 1000 C. Substantial melt migration occurs at 1300-1400 C and metal migrates out of the silicate change at 1450 C and approx. 50% silicate partial melting. As a group, our experiments contain three immiscible metallic melts 9Si-, and C-rich), two immiscible sulfide melts(Fe-and FeMgMnCa-rich) and Silicate melt. Our partial melting experiments on the Indarch (EH4) enstatite Chondrite suggest that igneous processes at low fO2 exhibit serveral unique features. The complete melting of sulfides at 1000 C suggest that aubritic sulfides are not relicts. Aubritic oldhamite may have crystallized from Ca and S complexed in the silicate melt. Significant metal-sulfide melt migration might occur at relatively low degrees of silicate partial melting. Substantial elemental exchange occurred between different melts (e.g., between sulfide and silicate, Si between silicate and metal), a feature not observed during experiments at higher fO2. This exchange may help explain the formation of aubrites from known enstatite chondrites.

A design of spectrophotometric microfluidic chip sensor for analyzing silicate in seawater

NASA Astrophysics Data System (ADS)

Cao, X.; Zhang, S. W.; Chu, D. Z.; Wu, N.; Ma, H. K.; Liu, Y.

2017-08-01

High quality and continuous in situ silicate data are required to investigate the mechanism of the biogeochemical cycles and the formation of red tide. There is an urgently growing need for autonomous in situ silicate instruments that perform determination on various platforms. However, due to the high reagents and power consumption, as well as high system complexity leading to low reliability and robustness, the performance of the commercially available silicate sensors is not satisfactory. With these problems, here we present a new generation of microfluidic continuous flow analysis silicate sensor with sufficient analytical performance and robustness, for in situ determination of soluble silicate in seawater. The reaction mechanism of this sensor is based on the reaction of silicate with ammonium molybdate to form a yellow silicomolybdate complex and further reduction to silicomoIybdenum blue by ascorbic acid. The minimum limit of detection was 45.1 nmol L-1, and the linear determination range of the sensor is 0-400 μmol L-1. The recovery rate of the actual water is between 98.1%-104.0%, and the analyzing cycle of the sensor is about 5 minutes. This sensor has the advantages of high accuracy, high integration, low water consumption, and strong anti-interference ability. It has been successfully applied to measuring the silicate in seawater in Jiaozhou Bay.

Effect of silicate ions on electrode overvoltage

NASA Technical Reports Server (NTRS)

Gras, J. M.; Seite, C.

1979-01-01

The influence of the addition of a silicate to a caustic solution (KOH) is studied in order to determine the degree to which silicates inhibit the corrosion of chrysotile under conditions of electrolysis at working temperatures of 100 C and above. In an alkaline solution containing various silicate concentrations, current density was increased and electrode overvoltage was measured. Results show that silicate ion concentrations in the electrolyte increase with temperature without effecting electrochemical performance up to 115 C at 700 MA/sqcm. At this point the concentration is about 0.5 g Si/100 g KOH. Beyond this limit, electrolytic performance rapidly degenerates due to severe oxidation of the electrodes.

Laboratory simulation of infrared astrophysical features. Ph.D. Thesis; [emission spectra of comets

NASA Technical Reports Server (NTRS)

Rose, L. A.

1977-01-01

Intermediate resolution emission spectroscopy was used to study a group of 9 terrestrial silicates, 1 synthetic silicate, 6 meteorites and 2 lunar soils; comparisons were made with the intermediate resolution spectra of Comet Kohoutek in order to determine which materials best simulate the 10um astrophysical feature. Mixtures of silicates which would yield spectra matching the spectrum of the comet in the 10um region include: (1) A hydrous layer lattice silicate in combination with a high temperature condensate; (2) an amorphous magnesium silicate in combination with a high temperature condensate and (3) glassy olivine and glassy anorthite in approximately equal proportions.

Nature of very small grains - PAH molecules or silicates?. [Polycyclic Aromatic Hydrocarbon in interstellar dust

NASA Technical Reports Server (NTRS)

Desert, F. X.; Leger, A.; Puget, J. L.; Boulanger, F.; Sellgren, K.

1986-01-01

The predictions of the model of Puget et al. (1985) for the emission from Very Small Grains (VSGs) including both graphitic and silicate components are compared with published 8-13-micron observations of astronomical sources. The VSGs are found to be mainly graphitic and an upper limit is placed on the relative mass of silicates based on lack of the 9.7-micron silicate emission feature on M 82 and NGC 2023. This dissymetry in the composition of VSGs supports the suggestion that they are formed in grain-grain collisions where the behaviors of graphite and silicate grains are expected to be quite different.

Microfabrics in Siliceous Hotsprings: Yellowstone National Park, Wyoming

NASA Technical Reports Server (NTRS)

Guidry, S. A.; Chafetz, H. S.; Westall, F.

2001-01-01

Microfabrics shed light on the mechanisms governing siliceous sinter precipitation, the profound effects of microorganisms, as well as a conventional facies model for siliceous hotsprings. Additional information is contained in the original extended abstract.

Thermodynamics and Kinetics of Silicate Vaporization

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Costa, Gustavo C. C.

2015-01-01

Silicates are a common class of materials that are often exposed to high temperatures. The behavior of these materials needs to be understood for applications as high temperature coatings in material science as well as the constituents of lava for geological considerations. The vaporization behavior of these materials is an important aspect of their high temperature behavior and it also provides fundamental thermodynamic data. The application of Knudsen effusion mass spectrometry (KEMS) to silicates is discussed. There are several special considerations for silicates. The first is selection of an appropriate cell material, which is either nearly inert or has well-understood interactions with the silicate. The second consideration is proper measurement of the low vapor pressures. This can be circumvented by using a reducing agent to boost the vapor pressure without changing the solid composition or by working at very high temperatures. The third consideration deals with kinetic barriers to vaporization. The measurement of these barriers, as encompassed in a vaporization coefficient, is discussed. Current measured data of rare earth silicates for high temperature coating applications are discussed. In addition, data on magnesium-iron-silicates (olivine) are presented and discussed.

On the Relation of Silicates and SiO Maser in Evolved Stars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jiaming; Jiang, Biwei, E-mail: bjiang@bnu.edu.cn

2017-04-01

The SiO molecule is one of the candidates for the seed of silicate dust in the circumstellar envelope of evolved stars, but this opinion is challenged. In this work we investigate the relation of the SiO maser emission power and the silicate dust emission power. With both our own observation by using the PMO/Delingha 13.7 m telescope and archive data, a sample is assembled of 21 SiO v  = 1, J  = 2 − 1 sources and 28 SiO v  = 1, J  = 1 − 0 sources that exhibit silicate emission features in the ISO /SWS spectrum as well. The analysis of their SiO maser and silicatemore » emission power indicates a clear correlation, which is not against the hypothesis that the SiO molecules are the seed nuclei of silicate dust. On the other hand, no correlation is found between SiO maser and silicate crystallinity, which may imply that silicate crystallinity does not correlate with mass-loss rate.« less

AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

PubMed

Park, Jae-Jun; Lee, Jae-Young

2013-05-01

Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

Novel solar light driven photocatalyst, zinc indium vanadate for photodegradation of aqueous phenol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahapure, Sonali A.; Rane, Vilas H.; Ambekar, Jalindar D.

2011-05-15

Graphical abstract: Novel photocatalyst, zinc indium vanadate (ZnIn{sub 2}V{sub 2}O{sub 9}) demonstrated and showed an excellent photocatalytic activity for phenol degradation under visible light. Research highlights: {yields} Designing and identification of a photocatalyst having prospective potential application to be used in visible light (400-800 nm). {yields} Successful synthesis of novel ZnIn{sub 2}V{sub 2}O{sub 9} by solid state route. {yields} Confirmation of the designed product using characterization techniques. {yields} Application study comprising photodegradation of aqueous phenol at visible light despite of UV radiations. -- Abstract: In the present investigation, we have demonstrated the synthesis of novel photocatalyst, zinc indium vanadate (ZIV)more » by solid-solid state route using respective oxides of zinc, indium and vanadium. This novel photocatalyst was characterized using XRD, FESEM, UV-DRS and FTIR in order to investigate its structural, morphological and optical properties. XRD clearly shows the formation of phase pure ZIV of triclinic crystal structure with good crystallinity. FESEM micrographs showed the clustered morphology having particle size between 0.5 and 1 {mu}m. Since, optical study showed the band gap around 2.8 eV, i.e. in visible region, we have performed the photocatalytic activity of phenol degradation under visible light irradiation. The photodecomposition of phenol by ZIV is studied for the first time and an excellent photocatalytic activity was obtained using this novel photocatalyst. Considering the band gap of zinc indium vanadate in visible region, it will also be the potential candidate for water splitting.« less

Fabrication and characterization of copper oxide (CuO)–gold (Au)–titania (TiO{sub 2}) and copper oxide (CuO)–gold (Au)–indium tin oxide (ITO) nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chopra, Nitin, E-mail: nchopra@eng.ua.edu; Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487; Shi, Wenwu

2014-10-15

Nanoscale heterostructures composed of standing copper oxide nanowires decorated with Au nanoparticles and shells of titania and indium tin oxide were fabricated. The fabrication process involved surfactant-free and wet-chemical nucleation of gold nanoparticles on copper oxide nanowires followed by a line-of-sight sputtering of titania or indium tin oxide. The heterostructures were characterized using high resolution electron microscopy, diffraction, and energy dispersive spectroscopy. The interfaces, morphologies, crystallinity, phases, and chemical compositions were analyzed. The process of direct nucleation of gold nanoparticles on copper oxide nanoparticles resulted in low energy interface with aligned lattice for both the components. Coatings of polycrystalline titaniamore » or amorphous indium tin oxide were deposited on standing copper oxide nanowire–gold nanoparticle heterostructures. Self-shadowing effect due to standing nanowire heterostructures was observed for line-of-sight sputter deposition of titania or indium tin oxide coatings. Finally, the heterostructures were studied using Raman spectroscopy and ultraviolet–visible spectroscopy, including band gap energy analysis. Tailing in the band gap energy at longer wavelengths (or lower energies) was observed for the nanowire heterostructures. - Highlights: • Heterostructures comprised of CuO nanowires coated with Au nanoparticles. • Au nanoparticles exhibited nearly flat and low energy interface with nanowire. • Heterostructures were further sputter-coated with oxide shell of TiO{sub 2} or ITO. • The process resulted in coating of polycrystalline TiO{sub 2} and amorphous ITO shell.« less

Economic and Environmental Consequences of Widespread Expansion of Solar energy

NASA Astrophysics Data System (ADS)

Satija, Gaurav

The purpose of the thesis is to examine the sustainability of an expansion in solar energy subject to resource constraints of Indium. Coal and natural gas are taken as competitors for solar in the energy market. The consumer electronics market also competes with solar PV production because of Indium's use in the manufacturing of LCD screens. A partial equilibrium model is made which determines the rate of extraction of indium, coal and natural gas endogenously. Consumer demand is modeled by the use of cost shares. Generation of electricity and production of LCDs are modeled using Constant Elasticity of Substitution functions. Initial production capacity for both electricity and LCD is considered in the model. The model then endogenously determines the level of investment required. Model simulations are performed to predict the extraction paths and production levels for a timeline of 100 years. A sensitivity analysis is performed to see the reaction of the model to changes in consumer demand and learning rates in solar energy. The response of the model to imposition of various emission caps is also shown. Results of the model show that indium scarcity prevents solar from expanding significantly to a level where it can take over from non-renewable sources of energy. Increased research in solar technologies would not be of much help unless more Indium is available, either by recycling of solar PVs and LCDs or searching for alternate technologies to manufacture LCD screes. Emission caps are able to control excessive usage of fossil fuels and preserve them for a longer time.

40 CFR 721.10018 - Calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3).

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Calcium hydroxide oxide silicate (Ca6... New Uses for Specific Chemical Substances § 721.10018 Calcium hydroxide oxide silicate (Ca6(OH)2O2... substance identified as calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3) (PMN P-01-442; CAS No. 13169...

40 CFR 721.10018 - Calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3).

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Calcium hydroxide oxide silicate (Ca6... New Uses for Specific Chemical Substances § 721.10018 Calcium hydroxide oxide silicate (Ca6(OH)2O2... substance identified as calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3) (PMN P-01-442; CAS No. 13169...

40 CFR 721.10018 - Calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3).

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Calcium hydroxide oxide silicate (Ca6... New Uses for Specific Chemical Substances § 721.10018 Calcium hydroxide oxide silicate (Ca6(OH)2O2... substance identified as calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3) (PMN P-01-442; CAS No. 13169...

40 CFR 721.10018 - Calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3).

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Calcium hydroxide oxide silicate (Ca6... New Uses for Specific Chemical Substances § 721.10018 Calcium hydroxide oxide silicate (Ca6(OH)2O2... substance identified as calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3) (PMN P-01-442; CAS No. 13169...

40 CFR 721.10018 - Calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3).

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Calcium hydroxide oxide silicate (Ca6... New Uses for Specific Chemical Substances § 721.10018 Calcium hydroxide oxide silicate (Ca6(OH)2O2... substance identified as calcium hydroxide oxide silicate (Ca6(OH)2O2(Si2O5)3) (PMN P-01-442; CAS No. 13169...

Polysilicate binding for silicate paints

NASA Astrophysics Data System (ADS)

Ivanovna, Loganina Valentina; Nikolaevna, Kislitsyna Svetlana; Bisengalievich, Mazhitov Yerkebulan

2018-06-01

It was suggested, that the polysilicate solutions obtained by mixing liquid glass and silicic acid sol as a binder in the manufacture of silicate paints. Information is provided on the structure and a property of the sodium polysilicate binder is presented. It has been found that the addition of silica powder to a liquid glass causes gelling in the course of time. It has been established that the introduction of the sol (increasing the silicate module) contributes to an increase in the fraction of high-polymer fractions of silicic anion, with the increase in the sol content of the polymer form of silica increasing. The research results the structure of sols and polysilicate solutions by the method of violation of total internal reflection. By the method of IR spectroscopy, the molybdate method established the presence of silica in the polysilicate binder polymeric varieties, which provides an increase in the stability of silicate coatings.

THE METABOLISM OF SILICON IN THE RAT AND ITS RELATION TO THE FORMATION OF ARTIFICIAL SILICEOUS CALCULI

PubMed Central

Keeler, Richard F.; Lovelace, Stuart A.

1959-01-01

The urinary excretion of silicon in the rat was found to be enhanced beyond normal levels by the administration of various chemical forms of silicon. The excretion was enhanced to a much greater degree by the administration of ethyl silicate than by magnesium trisilicate, sodium metasilicate, or water glass. The tolerance level of rats to sustained daily doses of ethyl silicate fed via stomach tube was approximately 15 to 30 mg. of silicon per rat per day. Urinary silicon excretion was found to be a straight line function of the concentration of ethyl silicate administered, via stomach tube, with approximately 18 per cent of the administered silicon appearing in the urine at all levels tested. Using sustained dietary additions of ethyl silicate as a means of enhancing urine silicon levels, artificial siliceous urinary calculi were consistently produced on zinc pellets implanted in the bladders of rats. PMID:13654631

Search for Large Presolar Silicate Grains in the QUE 99177 CR Chondrite

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Messenger, S.

2012-01-01

Silicates are among the most abundant pre-solar grain type, and their diverse chemical and isotopic compos-tions preserve detailed constraints on their stellar origins, condensation conditions, and nucleosynthetic and interstellar processes. Yet, owing to their small sizes, relatively few grains have been measured for isotopic compositions besides O and Si, and their mineralogy is poorly characterized. The average grain size (approx 270 nm) limits the number of analyses that can be conducted on a given grain, and their identification among solar system silicates introduces contaminating signal. These difficulties can be overcome by identifying large presolar silicate grains. However, such grains are very rare and only two approx 1 micron grains have been discovered. We are conducting a dedicated search for large presolar silicates in size-separated QUE 99177 matrix material. This primitive meteorite has among the highest abundance of presolar silicates

Stopping characteristics of boron and indium ions in silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. S., E-mail: DSVeselov@mephi.ru; Voronov, Yu. A.

2016-12-15

The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.

Lupus myocarditis: case report

DOE Office of Scientific and Technical Information (OSTI.GOV)

LaManna, M.M.; Lumia, F.J.; Gordon, C.I.

1988-03-01

Although gallium-67 (/sup 67/Ga) accumulates in both neoplastic and inflammatory tissues, indium-111 (/sup 111/In) labeled leukocytes are seen only in inflammatory cells. Indium-111-labeled leukocytes therefore are a useful agent in the noninvasive differentiation of inflammatory tissue from neoplastic tissue. This case is an interesting example of the use of /sup 111/In-labeled leukocytes to make that differentiation.

Indium diffusion through high-k dielectrics in high-k/InP stacks

NASA Astrophysics Data System (ADS)

Dong, H.; Cabrera, W.; Galatage, R. V.; Santosh KC, Brennan, B.; Qin, X.; McDonnell, S.; Zhernokletov, D.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Wallace, R. M.

2013-08-01

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.

Wavelength-scale Microlasers based on VCSEL-Photonic Crystal Architecture

DTIC Science & Technology

2015-01-20

molecular beam epitaxy , MBE). We will also assume the triangular lattice of air...Abbreviations, and Acronyms InP: indium phosphide InGaAsP: indium gallium arsenide phosphide MBE: molecular beam epiitaxy VCSEL : vertical cavity...substrates and were grown by MBE. Electron beam lithography and reactive ion etching was used to deep‐etch the holes of the PhC‐ VCSELS ,

Influence of disorder on the superconducting critical temperature in indium-opal nanocomposites

NASA Astrophysics Data System (ADS)

Zakharchuk, I.; Januzaj, A.; Mikhailin, N. Yu.; Traito, K. B.; Chernyaev, A. V.; Romanov, S. G.; Safonchik, M.; Shamshur, D. V.; Lähderanta, E.

2018-06-01

Transport properties of bulk indium-opal and indium-porous glass superconducting nanocomposites possessing moderate and strong disorder are investigated. A strongly nonmonotonous dependence of the global critical temperature Tc versus normal state conductivity of samples is found. The maximum, which is observed at moderate disorder, has Tc higher than that of clean bulk indium. The increasing part can be explained by the Eliashberg equations with disorder and an additional mechanism of interaction between superconducting and dielectric granules. The descending part of the maximum at higher disorder can be explained by the increasing of long-range Coulomb repulsion due to diffusion of charges. Negative slope in magnetic field dependence of resistivity and a peak in the temperature dependence of resistivity, observed in the sample near the proximity to the disorder-induced superconductor-insulator transition (SIT). A large difference between the onset temperature of superconducting fluctuations, Tcon , and global critical temperature Tc is found and considered in the framework of the weak multifractal theory. Slow time-logarithmic relaxation of the resistivity between Tc and Tcon is observed, which assumes existence of the precursor state near the SIT. This unusual state is discussed in the scope of the many-body localization theory.

Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.

PubMed

Yoon, Young Joon; Chae, S W; Kim, B K; Park, Min Joo; Kwak, Joon Seop

2010-05-01

Interfacial microstructure and elemental diffusion of Cu-doped indium oxide (CIO)/indium tin oxide (ITO) ohmic contacts to p-type GaN for light-emitting diodes (LEDs) were investigated using cross-sectional transmission electron microscopy (XTEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction. The CIO/ITO contacts gave specific contact resistances of approximately 10(-4) omegacm2 and transmittance greater than 95% at a wavelength of 405 nm when annealed at 630 degrees C for 1 min in air. After annealing at 630 degrees C, multi-component oxides composed of Ga2O3-In2O3, Ga2O3-CuO, and In2O3-CuO formed at the interface between p-GaN and ITO. Formation of multi-component oxides reduced the barrier height between p-GaN and ITO due to their higher work functions than that of ITO, and caused Ga in the GaN to diffuse into the CIO/ITO layer, followed by generation of acceptor-like Ga vacancies near the GaN surface, which lowered contact resistivity of the CIO/ITO contacts to p-GaN after the annealing.

High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukundan, Shruti; Mohan, Lokesh; Chandan, Greeshma

2015-03-15

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In{sub 0.55}Ga{sub 0.45}N over non-polar (11-20) a-plane In{sub 0.17}Ga{sub 0.83}N epilayer grown on a-plane (11-20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of In{sub x}Ga{sub 1−x}N alloys,more » which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region.« less

Synthesis of Two New Group 13 Benzoato-Chloro Complexes: A Structural Study of Gallium and Indium Chelating Carboxylates

NASA Technical Reports Server (NTRS)

Duraj, Stan A.; Hepp, Aloysius F.; Woloszynek, Robert; Protasiewicz, John D.; Dequeant, Michael; Ren, Tong

2010-01-01

Two new heteroleptic chelated-benzoato gallium (III) and indium (III) complexes have been prepared and structurally characterized. The molecular structures of [GaCl2(4-Mepy)2(O2CPh)]4-Mepy (1) and [InCl(4-Mepy)2(O2CPh)2]4-Mepy (2) have been determined by single-crystal x-ray diffraction. The gallium compound (1) is a distorted octahedron with cis-chloride ligands co-planar with the chelating benzoate and the 4-methylpyridines trans to each other. This is the first example of a Ga(III) structure with a chelating benzoate. The indium compound (2) is a distorted pentagonal bipyramid with two chelating benzoates, one 4-methylpyridine in the plane and a chloride trans to the other 4-methylpyridine. The indium bis-benzoate is an unusual example of a seven-coordinate structure with classical ligands. Both complexes, which due to the chelates, could also be described as pseudo-trigonal bipyramidal, include a three-bladed motif with three roughly parallel aromatic rings that along with a solvent of crystallization and electron-withdrawing chloride ligand(s) stabilize the solid-state structures.

The Mineralogy of Circumstellar Silicates Preserved in Cometary Dust

NASA Technical Reports Server (NTRS)

Keller, L. P.; Messenger, S.

2010-01-01

Interplanetary dust particles (IDPs) contain a record of the building blocks of the solar system including presolar grains, molecular cloud material, and materials formed in the early solar nebula. Cometary IDPs have remained relatively unaltered since their accretion because of the lack of parent body thermal and aqueous alteration. We are using coordinated transmission electron microscope (TEM) and ion microprobe studies to establish the origins of the various components within cometary IDPs. Of particular interest is the nature and abundance of presolar silicates in these particles because astronomical observations suggest that crystalline and amorphous silicates are the dominant grain types produced in young main sequence stars and evolved O-rich stars. Five circumstellar grains have been identified including three amorphous silicate grains and two polycrystalline aggregates. All of these grains are between 0.2 and 0.5 micrometers in size. The isotopic compositions of all five presolar silicate grains fall within the range of presolar oxides and silicates, having large (17)O-enrichments and normal (18)O/(16)O ratios (Group 1 grains from AGB and RG stars). The amorphous silicates are chemically heterogeneous and contain nanophase FeNi metal and FeS grains in a Mg-silicate matrix. Two of the amorphous silicate grains are aggregates with subgrains showing variable Mg/Si ratios in chemical maps. The polycrystalline grains show annealed textures (equilibrium grains boundaries, uniform Mg/Fe ratios), and consist of 50-100 nm enstatite and pyrrhotite grains with lesser forsterite. One of the polycrystalline aggregates contains a subgrain of diopside. The polycrystalline aggregates form by subsolidus annealing of amorphous precursors. The bulk compositions of the five grains span a wide range in Mg/Si ratios from 0.4 to 1.2 (avg. 0.86). The average Fe/Si (0.40) and S/Si (0.21) ratios show a much narrower range of values and are approximately 50% of their solar abundances. The latter observation may indicate a decoupling of the silicate and sulfide components in grains that condense in stellar outflows. The amorphous silicate grains described here were not extensively affected by irradiation, sputtering, or thermal processing and may represent relatively pristine circumstellar grains. They are strong candidates for the "dirty silicates" in astronomical observations of circumstellar dust shells. The polycrystalline grains were originally amorphous silicate grains that were likely annealed in the early solar nebula but the processing was not sufficient to erase their anomalous oxygen isotopic compositions.

Partitioning of carbon between Fe-rich alloy melt and silicate melt in a magma ocean - Implications for the abundance and origin of volatiles in Earth, Mars, and the Moon

NASA Astrophysics Data System (ADS)

Chi, Han; Dasgupta, Rajdeep; Duncan, Megan S.; Shimizu, Nobumichi

2014-08-01

The budget and origin of carbon in Earth and other terrestrial planets are debated and one of the key unknowns is the fate of carbon during early planetary processes including accretion, core formation, and magma ocean (MO) crystallization. Here we determine, experimentally, the solubility of carbon in coexisting Fe-Ni alloy melt and basaltic silicate melt in shallow MO conditions, i.e., at 1-3 GPa, 1500-1800 °C. Oxygen fugacity of the experiments, estimated based on Fe (in metallic alloy melt)-FeO (in silicate melt) equilibrium, varied between ∼IW-0.4 and IW-1.0, where IW refers to the oxygen fugacity imposed by the coexistence of iron and wüstite. Four different starting mixes, each with 7:3 silicate:metal mass ratio and silicate melt NBO/T (estimated proportion of non-bridging oxygen with respect to tetrahedral cations; NBO/T=2×/total OT -4, where T = Si + Ti + Al + Cr + P) ranging from 0.81 to 1.54 were studied. Concentrations of carbon in the alloy melt were determined using electron microprobe whereas carbon contents of quenched basaltic glasses were determined using secondary ionization mass spectrometry (SIMS). Identification of carbon and hydrogen-bearing species in silicate glasses was performed using Raman and Fourier Transformed Infrared (FTIR) spectroscopy. Our results show that carbon in the metallic melt varies between 4.4 wt.% and 7.4 wt.% and increases with increasing temperature and modestly with increasing pressure but decreases with increasing Ni content of the alloy melt. Carbon concentration in the silicate melts, on the other hand, varies from 11 ± 1 ppm to 111 ± 7 ppm and is negatively correlated with pressure but positively correlated with temperature, the NBO/T, the oxygen fugacity and the water content of the silicate melts. Raman and FTIR results show that at our experimental conditions, carbon in silicate melt is dissolved both as hydrogenated species and CO32-. The calculated carbon partition coefficient DCmetal/silicate varies from 510 ± 53 to 5369 ± 217 and varies systematically as a function of P, T, fO2, water content, the composition of the silicate melt (expressed using NBO/T), and Ni content of alloy melt (XNi). The range of DCmetal/silicate measured in our study with carbonated and hydrogenated carbon species in silicate melt is similar to that reported in the literature for experiments where carbonyl complexes are the chief carbon species in silicate melts. A parameterization was derived using the data from this and existing studies such as lnDCmetal/silicate=a/T+b·P/T+c·ln(fO2)+d·(NBO/T)+e·ln(1-XNi)+f where a = -33,510, b = 1357, c = -0.596, d = -1.182, e = 4.15, f = 13.38, the temperature is in Kelvin, and the pressure is in gigapascal. Using this parameterization and the estimated conditions for the base of the MOs, the average DCmetal/silicate value for Earth, Mars, and the Moon can be predicted. The deep MO of Earth is predicted to cause the strongest depletion of its silicate carbon budget, closely followed by Mars with intermediate depth MO, and then the Moon with a shallow MO. We predict that the lunar mantle carbon budget, similar to that of the Earth’s present-day upper mantle, might have been set by equilibrium core-mantle fractionation in MO; whereas for Earth, later processes such as ingassing from a proto-atmosphere and late-stage accretion of volatile-rich material was necessary for delivery of carbon and other volatiles. Finally, the comparison of our measured and predicted value of DCmetal/silicate for terrestrial MO with similar constraints on DNmetal/silicate from the literature suggests that the apparent depletion of nitrogen relative to carbon for the bulk silicate Earth and the Earth’s upper mantle is unlikely to be caused by preferential partitioning of nitrogen to alloy melt during core formation.

Spinodal decomposition in amorphous metal-silicate thin films: Phase diagram analysis and interface effects on kinetics

NASA Astrophysics Data System (ADS)

Kim, H.; McIntyre, P. C.

2002-11-01

Among several metal silicate candidates for high permittivity gate dielectric applications, the mixing thermodynamics of the ZrO2-SiO2 system were analyzed, based on previously published experimental phase diagrams. The driving force for spinodal decomposition was investigated in an amorphous silicate that was treated as a supercooled liquid solution. A subregular model was used for the excess free energy of mixing of the liquid, and measured invariant points were adopted for the calculations. The resulting simulated ZrO2-SiO2 phase diagram matched the experimental results reasonably well and indicated that a driving force exists for amorphous Zr-silicate compositions between approx40 mol % and approx90 mol % SiO2 to decompose into a ZrO2-rich phase (approx20 mol % SiO2) and SiO2-rich phase (>98 mol % SiO2) through diffusional phase separation at a temperature of 900 degC. These predictions are consistent with recent experimental reports of phase separation in amorphous Zr-silicate thin films. Other metal-silicate systems were also investigated and composition ranges for phase separation in amorphous Hf, La, and Y silicates were identified from the published bulk phase diagrams. The kinetics of one-dimensional spinodal decomposition normal to the plane of the film were simulated for an initially homogeneous Zr-silicate dielectric layer. We examined the effects that local stresses and the capillary driving force for component segregation to the interface have on the rate of spinodal decomposition in amorphous metal-silicate thin films.

Protective Coating For Laser Drilling Of Silicon

NASA Technical Reports Server (NTRS)

Shlichta, Paul J.

1988-01-01

Sodium silicate prevents spattered silicon from fusing with surrounding material. Sodium silicate solution applied to wafer by dipping and draining or by spinning; application by spraying also works. When dried in oven, solution leaves thin coating of sodium silicate glass.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Wang, Kuan-Hsun; Zan, Hsiao-Wen; Soppera, Olivier

2018-03-01

We investigate the composition of the DUV-patterned sol-gel indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) and observe a significant zinc loss effect during developing when the DUV exposure is insufficient. The zinc loss, however, is beneficial for increasing the mobility. Reducing zinc to indium composition ratio from 0.5 to 0.02 can effectively increase mobility from 0.27 to 7.30 cm2 V-1 s-1 when the gallium to indium ratio is fixed as 0.25 and the post annealing process is fixed as 300 °C for 2 h. On the other hand, an IGO TFT fails to deliver a uniform film and a reproducible TFT performance, revealing the critical role of zinc in forming homogeneous IGZO TFTs.

Determination of gold, indium, tellurium and thallium in the same sample digest of geological materials by atomic-absorption spectroscopy and two-step solvent extraction

USGS Publications Warehouse

Hubert, A.E.; Chao, T.T.

1985-01-01

A rock, soil, or stream-sediment sample is decomposed with hydrofluoric acid, aqua regia, and hydrobromic acid-bromine solution. Gold, thallium, indium and tellurium are separated and concentrated from the sample digest by a two-step MIBK extraction at two concentrations of hydrobromic add. Gold and thallium are first extracted from 0.1M hydrobromic acid medium, then indium and tellurium are extracted from 3M hydrobromic acid in the presence of ascorbic acid to eliminate iron interference. The elements are then determined by flame atomic-absorption spectrophotometry. The two-step solvent extraction can also be used in conjunction with electrothermal atomic-absorption methods to lower the detection limits for all four metals in geological materials. ?? 1985.

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes

NASA Astrophysics Data System (ADS)

Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan

2014-08-01

Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visible region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Das, Saikat; Izyumskaya, Natalia; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm

DOE PAGES

Yoo, Jae -Hyuck; Lange, Andrew; Bude, Jeff; ...

2017-02-10

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ. A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performancemore » degradation.« less

Mid-infrared emission in InxGa1-xAs/GaAs T-shaped quantum wire lasers and its indium composition dependence

NASA Astrophysics Data System (ADS)

Ridene, Said

2018-03-01

In this work, the emission wavelength has been extended out to 1.3, 1.5, and 2.2 μm for InxGa1-xAs/GaAs T-shaped quantum wire (TQWR) using multi-band k.p model and variational formalism. We have investigated the impact of the indium composition on the performance of a series of TQWR through a calculation of the optical gain and transition energies. It is found that the optical gain and the emission wavelength are more influenced taking into account the effect of the indium concentration and persisted up at room temperature (RT). The results could open the way to the development of laser communication systems operating at long wavelengths and fabricated from TQWRs structure.

Pyrolytic Synthesis of Carbon Nanotubes from Sucrose on a Mesoporous Silicate

NASA Technical Reports Server (NTRS)

Abdel-Fattah, Tarek; Siochi, Mia; Crooks, Roy

2005-01-01

Multiwall carbon nanotubes were synthesized from sucrose by a pyrolytic technique using mesoporous MCM-41 silicate templates without transition metal catalysts. The Nanotubes were examined in the carbon/silicate composite and after dissolution of the silicate. High resolution transmission electron microscopy study of the multiwall nanotubes showed them to be 15 nm in diameter, 200 nm in length and close-ended. There was variation in crystallinity with some nanotubes showing disordered wall structures.

Reagentless and calibrationless silicate measurement in oceanic waters.

PubMed

Giraud, William; Lesven, Ludovic; Jońca, Justyna; Barus, Carole; Gourdal, Margaux; Thouron, Danièle; Garçon, Véronique; Comtat, Maurice

2012-08-15

Determination of silicate concentration in seawater without addition of liquid reagents was the key prerequisite for developing an autonomous in situ electrochemical silicate sensor (Lacombe et al., 2007) [11]. The present challenge is to address the issue of calibrationless determination. To achieve such an objective, we chose chronoamperometry performed successively on planar microelectrode (ME) and ultramicroelectrode (UME) among the various possibilities. This analytical method allows estimating simultaneously the diffusion coefficient and the concentration of the studied species. Results obtained with ferrocyanide are in excellent agreement with values of the imposed concentration and diffusion coefficient found in the literature. For the silicate reagentless method, successive chronoamperometric measurements have been performed using a pair of gold disk electrodes for both UME and ME. Our calibrationless method was tested with different concentrations of silicate in artificial seawater from 55 to 140×10(-6) mol L(-1). The average value obtained for the diffusion coefficient of the silicomolybdic complex is 2.2±0.4×10(-6) cm(2) s(-1), consistent with diffusion coefficient values of molecules in liquid media. Good results were observed when comparing known concentration of silicate with experimentally derived ones. Further work is underway to explore silicate determination within the lower range of oceanic silicate concentration, down to 0.1×10(-6) mol L(-1). Copyright © 2012 Elsevier B.V. All rights reserved.

The effects of sulfide composition on the solubility of sulfur in coexisting silicate melts

NASA Astrophysics Data System (ADS)

Smythe, Duane; Wood, Bernard; Kiseeva, Ekaterina

2016-04-01

The extent to which sulfur dissolves in silicate melts saturated in an immiscible sulfide phase is a fundamental question in igneous petrology and plays a primary role in the generation of magmatic ore deposits, volcanic degassing and planetary differentiation. Terrestrial sulfide melts often contain over 20 weight percent Ni + Cu, however, most experimental studies investigating sulfur solubility in silicate melt have been primarily concerned with the effects of silicate melt composition, and pure FeS has been use as the immiscible sulfide melt (O'Neill and Mavrogenes, 2002; Li and Ripley, 2005). To investigation of the effects of sulfide composition, in addition to those of temperature, pressure and silicate melt composition, on sulfur solubility in silicate melts, we have carried out a series of experiments done at pressures between 1.5 and 3 GPa and temperatures from 1400 to 1800C over a range of compositions of both the silicate and sulfide melt. We find that the solubility of sulfur in silicate melts drops significantly with the substitution of Ni and Cu for Fe in the immiscible sulfide melt, decreasing by approximately 40% at mole fractions of NiS + Cu2S of 0.4. Combining our results with those from the previous studies investigating sulfur solubility in silicate melts we have also found that solubility increases with increasing temperature and decreases pressure. These results show that without considering the composition of the immiscible sulfide phase the sulfur content of silicate melts can be significantly overestimated. This may serve to explain the relatively low sulfur concentrations in MORB melts, which previous models predict to be undersaturated in a sulfide phase despite showing chemical and textural evidence for sulfide saturation. Li, C. & Ripley, E. M. (2005). Empirical equations to predict the sulfur content of mafic magmas at sulfide saturation and applications to magmatic sulfide deposits. Mineralium Deposita 40, 218-230. O'Neill, H. S. C. & Mavrogenes, J. A. (2002). The Sulfide Capacity and the Sulfur Content at Sulfide Saturation of Silicate Melts at 1400°C and 1 bar. Journal of Petrology 43, 1049-1087.

DEMONSTRATION BULLETIN: SOLIDIFICATION/STABILIZATION OF ORGANIC/INORGANIC CONTAMINANTS - SILICATE TECHNOLOGY CORPORATION

EPA Science Inventory

Silicate Technology Corporation's (STC's) technology for treating hazardous waste utilizes silicate compounds to stabilize organic and inorganic constituents in contaminated soils and sludges. STC has developed two groups of reagents: SOILSORB HM for treating wastes with inorgan...

Wind-Eroded Silicate as a Source of Hydrogen Peroxide on Mars

NASA Astrophysics Data System (ADS)

Bak, E. N.; Merrison, J. P.; Jensen, S. K.; Nørnberg, P.; Finster, K.

2014-07-01

Laboratory simulations show that wind-eroded silicate can be a source of hydrogen peroxide. The ubiquitous, fine-grained silicate dust might thus explain the oxidizing properties of the martian soil and affect the preservation of organic compounds.

Understanding Vesuvius magmatic processes: Evidence from primitive silicate-melt inclusions in medieval scoria clinopyroxenes (Terzigno formation)

USGS Publications Warehouse

Lima, A.; Belkin, H.E.; Torok, K.

1999-01-01

Microthermometric investigations of silicate-melt inclusions and electron microprobe analyses were conducted on experimentally homogenized silicate-melt inclusions and on the host clinopyroxenes from 4 scoria samples of different layers from the Mt. Somma-Vesuvius medieval eruption (Formazione di Terzigno, 893 A.D.). The temperature of homogenization, considered the minimum trapping temperature, ranges from 1190 to 1260??5 ??C for all clinopyroxene-hosted silicate melt inclusions. The major and minor-element compositional trends shown by Terzigno scoria and matrix glass chemical analysis are largely compatible with fractional crystallization of clinopyroxene and Fe-Ti oxides. Sulfur contents of the homogenized silicate-melt inclusions in clinopyroxene phenocrysts compared with that in the host scoria show that S has been significantly degassed in the erupted products; whereas, Cl has about the same abundance in the inclusions and in host scoria. Fluorine is low (infrequently up to 800 ppm) in the silicate-melt inclusions compared to 2400 ppm in the bulk scoria. Electron microprobe analyses of silicate-melt inclusions show that they have primitive magma compositions (Mg# = 75-91). The composition of the host clinopyroxene phenocrysts varies from typical plinian-related (Mg#???85) to non-plinian related (Mg#???85). The mixed source of the host clinopyroxenes and primitive nature of the silicate-melt inclusions implies that these phenocrysts, in part, may be residual and/or have a polygenetic origin. The similar variation trends of major and minor-elements between homogenized silicate-melt inclusions from the Terzigno scoria, and silicate-melt inclusions in olivine and diopside phenocrysts from plinian eruptions (Marianelli et al., 1995) suggest that the trapped inclusions represent melts similar to those that supplied the plinian and sub-plinian magma chambers. These geochemical characteristics suggest that the Vesuvius magmatic system retained a vestige of the most recent plinian event.

Cometary crystalline silicate before and after perihelion passage II

NASA Astrophysics Data System (ADS)

Ootsubo, Takafumi

2014-01-01

Crystalline silicate is often observed in comets as an 11.3-micron resonant emission feature, and may be used for probing the early solar nebula. Because the formation of the crystalline silicate requires high temperature, they are thought to have been born from amorphous silicate at the inner region, and then transported toward the outer regions where comets were born. This transportation can produce the difference in the crystalline fraction in the cometary silicate dust between two dynamical types of comets, Oort-cloud comets (OCs) and Ecliptic comets (ECs), due to the different heliocentric distances of their birth places. The study of peak wavelengths in crystalline features is important to investigate the conditions of the crystalline silicate formation as well. Thus far, we don't have enough observational samples of OCs. Fortunately, we can observe comet C/2012 K1 (PanSTARRS) along with C/2013 A1 (Siding Spring) in this semester. In particular, the comet C/2012 K1 (PanSTARRS) is a bright and good target for this silicate peak feature study. Observations at pre- and post-perihelion provide us precious information on the dust evolution of the comet.

A SYSTEMATIC SEARCH FOR THE SPECTRA WITH FEATURES OF CRYSTALLINE SILICATES IN THE SPITZER IRS ENHANCED PRODUCTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Rui; Luo, Ali; Liu, Jiaming

2016-06-01

The crystalline silicate features are mainly reflected in infrared bands. The Spitzer Infrared Spectrograph (IRS) collected numerous spectra of various objects and provided a big database to investigate crystalline silicates in a wide range of astronomical environments. We apply the manifold ranking algorithm to perform a systematic search for the spectra with crystalline silicate features in the Spitzer IRS Enhanced Products available. In total, 868 spectra of 790 sources are found to show the features of crystalline silicates. These objects are cross-matched with the SIMBAD database as well as with the Large Sky Area Multi-object Fiber Spectroscopic Telescope (LAMOST)/DR2. Themore » average spectrum of young stellar objects shows a variety of features dominated either by forsterite or enstatite or neither, while the average spectrum of evolved objects consistently present dominant features of forsterite in AGB, OH/IR, post-AGB, and planetary nebulae. They are identified optically as early-type stars, evolved stars, galaxies and so on. In addition, the strength of spectral features in typical silicate complexes is calculated. The results are available through CDS for the astronomical community to further study crystalline silicates.« less

SILICATES FOR CORROSION CONTROL IN BUILDING POTABLE WATER SYSTEMS

EPA Science Inventory

Silicates have been used to control the corrosion of drinking water distribution system materials. Previous work has shown that they are particularly useful in reducing the release of zinc from galvanized materials in hot water systems. Negatively charged silicate species were re...

Formation and Characterization of Gold Nanoparticles

DTIC Science & Technology

2013-09-01

nanowires are useful because they can be grown almost dislocation free, due to their nano dimension. The quality of crystalline materials is diminished by...real substrate temperature was obtained from the calibration based on the melting points of indium (In), selenium (Se), cadmium (Cd), and zinc (Zn...hydrogen fluoride In indium MBE molecular beam epitaxy NH3OH ammonium hydroxide RHEED reflection high-energy electron diffraction Se selenium SEM

Intra-abdominal abscess demonstrating an unusually large intra-abdominal pattern on an indium-111 leukocyte scan

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, R.R.; Fernandez-Ulloa, M.; ter Penning, B.

1988-12-01

Indium-111 WBC imaging of a patient with occult septicemia revealed a large focal pattern of radiopharmaceutical distribution within the abdominal cavity at 24 hours post radiopharmaceutical administration. This finding was felt to represent a large intra-abdominal abscess. A five liter peritoneal abscess was found at surgery. This case illustrates an unusual presentation of an intra-abdominal abscess.

COORDINATED ANALYSES OF PRESOLAR GRAINS IN THE ALLAN HILLS 77307 AND QUEEN ELIZABETH RANGE 99177 METEORITES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ann N.; Nittler, Larry R.; Alexander, Conel M. O'D.

2010-08-10

We report the identification of presolar silicates ({approx}177 ppm), presolar oxides ({approx}11 ppm), and one presolar SiO{sub 2} grain in the Allan Hills (ALHA) 77307 chondrite. Three grains having Si-isotopic compositions similar to SiC X and Z grains were also identified, though the mineral phases are unconfirmed. Similar abundances of presolar silicates ({approx}152 ppm) and oxides ({approx}8 ppm) were also uncovered in the primitive CR chondrite Queen Elizabeth Range (QUE) 99177, along with 13 presolar SiC grains and one presolar silicon nitride. The O-isotopic compositions of the presolar silicates and oxides indicate that most of the grains condensed in low-massmore » red giant and asymptotic giant branch stars. Interestingly, unlike presolar oxides, few presolar silicate grains have isotopic compositions pointing to low-metallicity, low-mass stars (Group 3). The {sup 18}O-rich (Group 4) silicates, along with the few Group 3 silicates that were identified, likely have origins in supernova outflows. This is supported by their O- and Si-isotopic compositions. Elemental compositions for 74 presolar silicate grains were determined by scanning Auger spectroscopy. Most of the grains have non-stoichiometric elemental compositions inconsistent with pyroxene or olivine, the phases commonly used to fit astronomical spectra, and have comparable Mg and Fe contents. Non-equilibrium condensation and/or secondary alteration could produce the high Fe contents. Transmission electron microscopic analysis of three silicate grains also reveals non-stoichiometric compositions, attributable to non-equilibrium or multistep condensation, and very fine scale elemental heterogeneity, possibly due to subsequent annealing. The mineralogies of presolar silicates identified in meteorites thus far seem to differ from those in interplanetary dust particles.« less

Effect of natural fiber types and sodium silicate coated on natural fiber mat/PLA composites: Tensile properties and rate of fire propagation

NASA Astrophysics Data System (ADS)

Thongpin, C.; Srimuk, J.; hipkam, N.; Wachirapong, P.

2015-07-01

In this study, 3 types of natural fibres, i.e. jute, sisal and abaca, were plain weaved to fibre mat. Before weaving, the fibres were treated with 5% NaOH to remove hemi cellulose and lignin. The weaving was performed by hand using square wooden block fit with nails for weaving using one and two types of natural fibres as weft and warp fibre to produce natural fibre mat. The fibre mat was also impregnated in sodium silicate solution extracted from rich husk ash. The pH of the solution was adjusted to pH 7 using H2SO4 before impregnation. After predetermined time, sodium silicate was gelled and deposited on the mat. The fabric mat and sodium silicate coated mat were then impregnated with PLA solution to produce prepreg. Dried pepreg was laminated with PLA sheet using compressing moulding machine to obtain natural fibre mat/PLA composite. The composite containing abaca aligned in longitudinal direction with respect to tension force enhanced Young's modulus more than 300%. Fibre mat composites with abaca aligned in longitudinal direction also showed tensile strength enhancement nearly 400% higher than neat PLA. After coating with sodium silicate, the tensile modulus of the composites was found slightly increased. The silicate coating was disadvantage on tensile strength of the composite due to the effect of sodium hydroxide solution that was used as solvent for silicate extraction from rice husk ash. However, sodium silicate could retard rate of fire propagation about 50%compare to neat PLA and about 10% reduction compared to fibre mat composites without sodium silicate coated fibre mat.

Compositional effects on Si–OH bond length in hydrous silicates with implications for trends in the SiOH acidity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarubin, Dmitri P., E-mail: dmitri.zarubin@mtu-net.ru

2014-04-01

Theoretical calculations of the structure and Brønsted acidity of SiOH groups in silica clusters have never addressed the question if these vary with the degree of SiOH deprotonation. In this connection, a statistical analysis is presented of Si–OH bond lengths in crystalline hydrogen silicates with well-determined structures with a special emphasis placed on effects of the silicate composition. It is found that among hydrogen silicates of large cations with low charges the Si–OH bonds are always longer than terminal Si–O bonds in the same anion and correlate in length with the anionic charge per tetrahedron. The findings are explained bymore » steric limitations on charge balancing at oxygen atoms by hydrogen bonds and/or cations. It is suggested that similar limitations and imbalances may underlie the well-known trends in the Brønsted acidity of silicic acids and silicas in aqueous media: decreased acidity with increased SiOH deprotonation and increased acidity with increased tetrahedra connectivity. - Graphical abstract: Si–OH bonds in crystalline silicates lengthen with the anionic charge per tetrahedron, which is in parallel with the well-known trend of decreased acidity of silicic acids and silicas in solution with increased degree of deprotonation. - Highlights: • Si–OH bonds in alkali hydrogen silicates are always longer than terminal Si–O bonds. • Si–OH bonds in silicates lengthen with the anionic charge per tetrahedron. • The Si–OH bond elongation results from inherent underbonding of terminal O atoms. • The longer the Si–OH bond, the less acidic the OH group is.« less

Carbonation of metal silicates for long-term CO2 sequestration

DOEpatents

Blencoe, James G; Palmer, Donald A; Anovitz, Lawrence M; Beard, James S

2014-03-18

In a preferred embodiment, the invention relates to a process of sequestering carbon dioxide. The process comprises the steps of: (a) reacting a metal silicate with a caustic alkali-metal hydroxide to produce a hydroxide of the metal formerly contained in the silicate; (b) reacting carbon dioxide with at least one of a caustic alkali-metal hydroxide and an alkali-metal silicate to produce at least one of an alkali-metal carbonate and an alkali-metal bicarbonate; and (c) reacting the metal hydroxide product of step (a) with at least one of the alkali-metal carbonate and the alkali-metal bicarbonate produced in step (b) to produce a carbonate of the metal formerly contained in the metal silicate of step (a).

Carbonation of metal silicates for long-term CO.sub.2 sequestration

DOEpatents

Blencoe, James G [Harriman, TN; Palmer, Donald A [Oliver Springs, TN; Anovitz, Lawrence M [Knoxville, TN; Beard, James S [Martinsville, VA

2012-02-14

In a preferred embodiment, the invention relates to a process of sequestering carbon dioxide. The process comprises the steps of: (a) reacting a metal silicate with a caustic alkali-metal hydroxide to produce a hydroxide of the metal formerly contained in the silicate; (b) reacting carbon dioxide with at least one of a caustic alkali-metal hydroxide and an alkali-metal silicate to produce at least one of an alkali-metal carbonate and an alkali-metal bicarbonate; and (c) reacting the metal hydroxide product of step (a) with at least one of the alkali-metal carbonate and the alkali-metal bicarbonate produced in step (b) to produce a carbonate of the metal formerly contained in the metal silicate of step (a).

SILICATE TECHNOLOGY CORPORATION'S SOLIDIFICATION/ STABILIZATION TECHNOLOGY FOR ORGANIC AND INORGANIC CONTAMINANTS IN SOILS - APPLICATIONS ANALYSIS REPORT

EPA Science Inventory

This Applications Analysis Report evaluates the solidification/stabilization treatment process of Silicate Technology Corporation (STC) for the on-site treatment of hazardous waste. The STC immobilization technology utilizes a proprietary product (FMS Silicate) to chemically stab...

TECHNOLOGY EVALUATION REPORT: SILICATE TECHNOLOGY CORPORATION - SOLIDIFICATION/STABILIZATION OF PCP AND INORGANIC CONTAMINANTS IN SOILS - SELMA, CA

EPA Science Inventory

This Technolgy Evaluation Report evaluates the solidification/stabilization process of Silicate Technology Corporation (STC) for the on-site treatment of contaminated soil The STC immobilization technology uses a proprietary product (FMS Silicate) to chemically stabilize and ...

77 FR 21676 - Silicic Acid, Sodium Salt etc.; Tolerance Exemption

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-11

... Silicic acid, sodium salt, reaction products with chlorotrimethylsilane and iso-propyl alcohol, reaction..., reaction products with chlorotrimethylsilane and iso-propyl alcohol, reaction with poly(oxypropylene)-poly... from the requirement of a tolerance for residues of Silicic acid, sodium salt, reaction products with...

Metal/Silicate Partitioning of P, Ga, and W at High Pressures and Temperatures: Dependence on Silicate Melt Composition

NASA Technical Reports Server (NTRS)

Bailey, Edward; Drake, Michael J.

2004-01-01

The distinctive pattern of element concentrations in the upper mantle provides essential evidence in our attempts to understand the accretion and differentiation of the Earth (e.g., Drake and Righter, 2002; Jones and Drake, 1986; Righter et al., 1997; Wanke 1981). Core formation is best investigated through use of metal/silicate partition coefficients for siderophile elements. The variables influencing partition coefficients are temperature, pressure, the major element compositions of the silicate and metal phases, and oxygen fugacity. Examples of studies investigating the effects of these variables on partitioning behavior are: composition of the metal phase by Capobianco et al. (1999) and Righter et al. (1997); silicate melt composition by Watson (1976), Walter and Thibault (1995), Hillgren et al. (1996), Jana and Walker (1997), and Jaeger and Drake (2000); and oxygen fugacity by Capobianco et al. (1999), and Walter and Thibault (1995). Here we address the relative influences of silicate melt composition, pressure and temperature.

Heterogeneous Nucleation of Protein Crystals on Fluorinated Layered Silicate

PubMed Central

Ino, Keita; Udagawa, Itsumi; Iwabata, Kazuki; Takakusagi, Yoichi; Kubota, Munehiro; Kurosaka, Keiichi; Arai, Kazuhito; Seki, Yasutaka; Nogawa, Masaya; Tsunoda, Tatsuo; Mizukami, Fujio; Taguchi, Hayao; Sakaguchi, Kengo

2011-01-01

Here, we describe an improved system for protein crystallization based on heterogeneous nucleation using fluorinated layered silicate. In addition, we also investigated the mechanism of nucleation on the silicate surface. Crystallization of lysozyme using silicates with different chemical compositions indicated that fluorosilicates promoted nucleation whereas the silicates without fluorine did not. The use of synthesized saponites for lysozyme crystallization confirmed that the substitution of hydroxyl groups contained in the lamellae structure for fluorine atoms is responsible for the nucleation-inducing property of the nucleant. Crystallization of twelve proteins with a wide range of pI values revealed that the nucleation promoting effect of the saponites tended to increase with increased substitution rate. Furthermore, the saponite with the highest fluorine content promoted nucleation in all the test proteins regardless of their overall net charge. Adsorption experiments of proteins on the saponites confirmed that the density of adsorbed molecules increased according to the substitution rate, thereby explaining the heterogeneous nucleation on the silicate surface. PMID:21818343

Shear strengths of a gallium alloy bonded to human enamel following nine different surface treatments.

PubMed

Claire, J; Williams, P T

2001-03-01

Gallium and indium-containing alloys have demonstrated an ability to wet and bond to many types of materials including enamel. The purpose of this study was to evaluate and compare the bond strengths of a gallium-and-indium-containing alloy and a dental amalgam to human enamel surfaces. A flat enamel bonding surface was created by slicing recently extracted human molars with a 180-grit diamond wheel. Cylinders of amalgam or a gallium-indium alloy were bonded to the as-cut surfaces or to as-cut surfaces that had been pumiced, air-abraded or acid-etched for various times. Before testing, samples were stored under different conditions (100% humidity, immersed in water, thermocycled). The shear-bond strength was determined using a crosshead speed of 0.1 mm x min(-1). Sample size was 10. Data was subjected to ANOVA and a post-hoc Tukey's test. The bond strength of amalgam to enamel was zero. The bond strength of the gallium-indium alloy ranged between 6.5 MPa (10s etch with 10% phosphoric acid) and 4.2 MPa (pumiced enamel). Acid-etching significantly increased the bond strength (P>0.0001) The bond strength was not significantly affected by the type of mechanical surface preparation, storage conditions, thermocycling, etching times or acid concentrations. Bonding, particularly chemical bonding, suggests a greater potential for better wetting and therefore better sealing of a cavity. Since microleakage of restorations is one of the principal causes of restoration failure, materials that can bond may in turn posses enhanced resistance to microleakage and ultimately, resistance to restoration failure. The gallium-indium alloy evaluated in this study may be such an alloy.

Measurement of acute Q-wave myocardial infarct size with single photon emission computed tomography imaging of indium-111 antimyosin.

PubMed

Antunes, M L; Seldin, D W; Wall, R M; Johnson, L L

1989-04-01

Myocardial infarct size was measured by single photon emission computed tomography (SPECT) following injection of indium-111 antimyosin in 27 patients (18 male and 9 female; mean age 57.4 +/- 10.5 years, range 37 to 75) who had acute transmural myocardial infarction (MI). These 27 patients represent 27 of 35 (77%) consecutive patients with acute Q-wave infarctions who were injected with indium-111 antimyosin. In the remaining 8 patients either tracer uptake was too faint or the scans were technically inadequate to permit infarct sizing from SPECT reconstructions. In the 27 patients studied, infarct location by electrocardiogram was anterior in 15 and inferoposterior in 12. Nine patients had a history of prior infarction. Each patient received 2 mCi of indium-111 antimyosin followed by SPECT imaging 48 hours later. Infarct mass was determined from coronal slices using a threshold value obtained from a human torso/cardiac phantom. Infarct size ranged from 11 to 87 g mean 48.5 +/- 24). Anterior infarcts were significantly (p less than 0.01) larger (60 +/- 20 g) than inferoposterior infarcts (34 +/- 21 g). For patients without prior MI, there were significant inverse correlations between infarct size and ejection fraction (r = 0.71, p less than 0.01) and wall motion score (r = 0.58, p less than 0.01) obtained from predischarge gated blood pool scans. Peak creatine kinase-MB correlated significantly with infarct size for patients without either reperfusion or right ventricular infarction (r = 0.66). Seven patients without prior infarcts had additional simultaneous indium-111/thallium-201 SPECT studies using dual energy windows.(ABSTRACT TRUNCATED AT 250 WORDS)

Determination of silver, antimony, bismuth, copper, cadmium and indium in ores, concentrates and related materials by atomic-absorption spectrophotometry after methyl isobutyl ketone extraction as iodides.

PubMed

Donaldson, E M; Wang, M

1986-03-01

Methods for determining ~ 0.2 mug g or more of silver and cadmium, ~ 0.5 mug g or more of copper and ~ 5 mug g or more of antimony, bismuth and indium in ores, concentrates and related materials are described. After sample decomposition and recovery of antimony and bismuth retained by lead and calcium sulphates, by co-precipitation with hydrous ferric oxide at pH 6.20 +/- 0.05, iron(III) is reduced to iron(II) with ascorbic acid, and antimony, bismuth, copper, cadmium and indium are separated from the remaining matrix elements by a single methyl isobutyl ketone extraction of their iodides from ~2M sulphuric acid-0.1M potassium iodide. The extract is washed with a sulphuric acid-potassium iodide solution of the same composition to remove residual iron and co-extracted zinc, and the extracted elements are stripped from the extract with 20% v v nitric acid-20% v v hydrogen peroxide. Alternatively, after the removal of lead sulphate by filtration, silver, copper, cadmium and indium can be extracted under the same conditions and stripped with 40% v v nitric acid-25% v v hydrochloric acid. The strip solutions are treated with sulphuric and perchloric acids and ultimately evaporated to dry ness. The individual elements are determined in a 24% v v hydrochloric acid medium containing 1000 mug of potassium per ml by atomic-absorption spectrophotometry with an air-acetylene flame. Tin, arsenic and molybdenum are not co-extracted under the conditions above. Results obtained for silver, antimony, bismuth and indium in some Canadian certified reference materials by these methods are compared with those obtained earlier by previously published methods.

Super-stretchable metallic interconnects on polymer with a linear strain of up to 100%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arafat, Yeasir; Dutta, Indranath; Panat, Rahul, E-mail: Rahul.panat@wsu.edu

Metal interconnects in flexible and wearable devices are heterogeneous metal-polymer systems that are expected to sustain large deformation without failure. The principal strategy to make strain tolerant interconnect lines on flexible substrates has comprised of creating serpentine structures of metal films with either in-plane or out-of-plane waves, using porous substrates, or using highly ductile materials such as gold. The wavy and helical serpentine patterns preclude high-density packing of interconnect lines on devices, while ductile materials such as Au are cost prohibitive for real world applications. Ductile copper films can be stretched if bonded to the substrate, but show high levelmore » of cracking beyond few tens of % strain. In this paper, we demonstrate a material system consisting of Indium metal film over an elastomer (PDMS) with a discontinuous Cr layer such that the metal interconnect can be stretched to extremely high linear strain (up to 100%) without any visible cracks. Such linear strain in metal interconnects exceeds that reported in literature and is obtained without the use of any geometrical manipulations or porous substrates. Systematic experimentation is carried out to explain the mechanisms that allow the Indium film to sustain the high strain level without failure. The islands forming the discontinuous Cr layer are shown to move apart from each other during stretching without delamination, providing strong adhesion to the Indium film while accommodating the large strain in the system. The Indium film is shown to form surface wrinkles upon release from the large strain, confirming its strong adhesion to PDMS. A model is proposed based upon the observations that can explain the high level of stretch-ability of the Indium metal film over the PDMS substrate.« less

High In-content InGaN nano-pyramids: Tuning crystal homogeneity by optimized nucleation of GaN seeds

NASA Astrophysics Data System (ADS)

Bi, Zhaoxia; Gustafsson, Anders; Lenrick, Filip; Lindgren, David; Hultin, Olof; Wallenberg, L. Reine; Ohlsson, B. Jonas; Monemar, Bo; Samuelson, Lars

2018-01-01

Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent {" separators="| 10 1 ¯ 1 } facets. Further analysis reveals a variation in the indium composition to be mediated by competing InGaN growth on two types of crystal planes, {" separators="| 10 1 ¯ 1 } and (0001). Typically, the InGaN growth on {" separators="| 10 1 ¯ 1 } planes is much slower than on the (0001) plane. The formation of the (0001) plane and the growth of InGaN on it were found to be dependent on the morphology of the GaN seeds. We propose growth of InGaN pyramids seeded by {" separators="| 10 1 ¯ 1 }-faceted GaN pyramids as a mean to avoid InGaN material grown on the otherwise formed (0001) plane, leading to a significant reduction of variations in the indium composition in the InGaN pyramids. The InGaN pyramids in this work can be used as a high-quality template for optoelectronic devices having indium-rich active layers, with a potential of reaching green, yellow, and red emissions for LEDs.

Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

NASA Astrophysics Data System (ADS)

Jewett, Scott A.; Yoder, Jeffrey A.; Ivanisevic, Albena

2012-11-01

Devices containing III-V semiconductors such as InAs are increasingly being used in the electronic industry for a variety of optoelectronic applications. Furthermore, the attractive chemical, material, electronic properties make such materials appealing for use in devices designed for biological applications, such as biosensors. However, in biological applications the leaching of toxic materials from these devices could cause harm to cells or tissue. Additionally, after disposal, toxic inorganic materials can leach from devices and buildup in the environment, causing long-term ecological harm. Therefore, the toxicity of these materials along with their stability in physiological conditions are important factors to consider. Surface modifications are one common method of stabilizing semiconductor materials in order to chemically and electronically passivate them. Such surface modifications could also prevent the leaching of toxic materials by preventing the regrowth of the unstable surface oxide layer and by creating an effective barrier between the semiconductor surface and the surrounding environment. In this study, various surface modifications on InAs are developed with the goal of decreasing the leaching of indium and arsenic. The leaching of indium and arsenic from modified substrates was assessed in physiological conditions using inductively coupled plasma mass spectrometry (ICP-MS). Substrates modified with 11-mercapto-1-undecanol (MU) and graft polymerized with poly(ethylene) glycol (PEG) were most effective at preventing indium and arsenic leaching. These surfaces were characterized using contact angle analysis, ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Substrates modified with collagen and synthetic polyelectrolytes were least effective, due to the destructive nature of acidic environments on InAs. The toxicity of modified and unmodified InAs, along with raw indium, arsenic, and PEG components was assessed using zebrafish embryos.

Effects of Incorporating High-Volume Fly Ash into Tricalcium Silicate on the Degree of Silicate Polymerization and Aluminum Substitution for Silicon in Calcium Silicate Hydrate

DOE PAGES

Bae, Sungchul; Taylor, Rae; Kilcoyne, David; ...

2017-02-04

This study assesses the quantitative effects of incorporating high-volume fly ash (HVFA) into tricalcium silicate (C 3S) paste on the hydration, degree of silicate polymerization, and Al substitution for Si in calcium silicate hydrate (C–S–H). Thermogravimetric analysis and isothermal conduction calorimetry showed that, although the induction period of C 3S hydration was significantly extended, the degree of hydration of C 3S after the deceleration period increased due to HVFA incorporation. Synchrotron-sourced soft X-ray spectromicroscopy further showed that most of the C 3S in the C 3S-HVFA paste was fully hydrated after 28 days of hydration, while that in the puremore » C 3S paste was not. The chemical shifts of the Si K edge peaks in the near-edge X-ray fine structure of C–S–H in the C 3S-HVFA paste directly indicate that Al substitutes for Si in C–S–H and that the additional silicate provided by the HVFA induces an enhanced degree of silicate polymerization. This new spectromicroscopic approach, supplemented with 27Al and 29Si magic-angle spinning nuclear magnetic resonance spectroscopy and transmission electron microscopy, turned out to be a powerful characterization tool for studying a local atomic binding structure of C–S–H in C 3S-HVFA system and presented results consistent with previous literature.« less

Effects of Incorporating High-Volume Fly Ash into Tricalcium Silicate on the Degree of Silicate Polymerization and Aluminum Substitution for Silicon in Calcium Silicate Hydrate

PubMed Central

Bae, Sungchul; Taylor, Rae; Kilcoyne, David; Moon, Juhyuk; Monteiro, Paulo J. M.

2017-01-01

This study assesses the quantitative effects of incorporating high-volume fly ash (HVFA) into tricalcium silicate (C3S) paste on the hydration, degree of silicate polymerization, and Al substitution for Si in calcium silicate hydrate (C–S–H). Thermogravimetric analysis and isothermal conduction calorimetry showed that, although the induction period of C3S hydration was significantly extended, the degree of hydration of C3S after the deceleration period increased due to HVFA incorporation. Synchrotron-sourced soft X-ray spectromicroscopy further showed that most of the C3S in the C3S-HVFA paste was fully hydrated after 28 days of hydration, while that in the pure C3S paste was not. The chemical shifts of the Si K edge peaks in the near-edge X-ray fine structure of C–S–H in the C3S-HVFA paste directly indicate that Al substitutes for Si in C–S–H and that the additional silicate provided by the HVFA induces an enhanced degree of silicate polymerization. This new spectromicroscopic approach, supplemented with 27Al and 29Si magic-angle spinning nuclear magnetic resonance spectroscopy and transmission electron microscopy, turned out to be a powerful characterization tool for studying a local atomic binding structure of C–S–H in C3S-HVFA system and presented results consistent with previous literature. PMID:28772490

Effects of Incorporating High-Volume Fly Ash into Tricalcium Silicate on the Degree of Silicate Polymerization and Aluminum Substitution for Silicon in Calcium Silicate Hydrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bae, Sungchul; Taylor, Rae; Kilcoyne, David

This study assesses the quantitative effects of incorporating high-volume fly ash (HVFA) into tricalcium silicate (C 3S) paste on the hydration, degree of silicate polymerization, and Al substitution for Si in calcium silicate hydrate (C–S–H). Thermogravimetric analysis and isothermal conduction calorimetry showed that, although the induction period of C 3S hydration was significantly extended, the degree of hydration of C 3S after the deceleration period increased due to HVFA incorporation. Synchrotron-sourced soft X-ray spectromicroscopy further showed that most of the C 3S in the C 3S-HVFA paste was fully hydrated after 28 days of hydration, while that in the puremore » C 3S paste was not. The chemical shifts of the Si K edge peaks in the near-edge X-ray fine structure of C–S–H in the C 3S-HVFA paste directly indicate that Al substitutes for Si in C–S–H and that the additional silicate provided by the HVFA induces an enhanced degree of silicate polymerization. This new spectromicroscopic approach, supplemented with 27Al and 29Si magic-angle spinning nuclear magnetic resonance spectroscopy and transmission electron microscopy, turned out to be a powerful characterization tool for studying a local atomic binding structure of C–S–H in C 3S-HVFA system and presented results consistent with previous literature.« less

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Optoelectronic and magnetic properties of Mn-doped indium tin oxide: A first-principles study

NASA Astrophysics Data System (ADS)

Nath Tripathi, Madhvendra; Saeed Bahramy, Mohammad; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-10-01

The manganese doped indium tin oxide (ITO) has integrated magnetics, electronics, and optical properties for next generation multifunctional devices. Our first-principles density functional theory (DFT) calculations show that the manganese atom replaces b-site indium atom, located at the second coordination shell of the interstitial oxygen in ITO. It is also found that both anti-ferromagnetic and ferromagnetic behaviors are realizable. The calculated magnetic moment of 3.95μB/Mn as well as the high transmittance of ˜80% for a 150 nm thin film of Mn doped ITO is in good agreement with the experimental data. The inclusion of on-site Coulomb repulsion corrections via DFT + U methods turns out to improve the optical behavior of the system. The optical behaviors of this system reveal its suitability for the magneto-opto-electronic applications.

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

NASA Astrophysics Data System (ADS)

Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Oxygen-free atomic layer deposition of indium sulfide

DOEpatents

Martinson, Alex B.; Hock, Adam S.; McCarthy, Robert; Weimer, Matthew S.

2016-07-05

A method for synthesizing an In(III) N,N'-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately -30.degree. C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N'-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.

PubMed

Chen, Kai-Huang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Liang, Shu-Ping; Young, Tai-Fa; Syu, Yong-En; Sze, Simon M

2016-12-01

Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

Optical properties of an indium doped CdSe nanocrystal: A density functional approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in; Mathew, Thomas

2016-05-06

We have studied the electronic and optical properties of a CdSe nanocrystal doped with n-type impurity atom. First principle calculations of the CdSe nanocrystal based on the density functional theory (DFT), as implemented in the Vienna Ab Initio Simulation Package (VASP) was used in the calculations. We have introduced a single Indium impurity atom into CdSe nanocrystal with 1.3 nm diameter. Nanocrystal surface dangling bonds are passivated with hydrogen atom. The band-structure, density of states and absorption spectra of the doped and undopted nanocrystals were discussed. Inclusion of the n-type impurity atom introduces an additional electron in conduction band, and significantlymore » alters the electronic and optical properties of undoped CdSe nanocrystal. Indium doped CdSe nannocrystal have potential applications in optoelectronic devices.« less

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdinov, A. Sh., E-mail: abdinov-axmed@yandex.ru; Babayeva, R. F., E-mail: Babaeva-Rena@yandex.ru; Amirova, S. I.

2013-08-15

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributedmore » to the presence of random drift barriers in the free energy bands.« less

Temperature sensibility of the birefringence properties in side-hole photonic crystal fiber filled with Indium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reyes-Vera, Erick, E-mail: erickreyes@itm.edu.co; Gómez-Cardona, Nelson D.; Facultad de Ingeniería, Instituto Tecnológico Metropolitano, A.A. 54954 Medellín

2014-11-17

We report on the temperature sensitivity of the birefringence properties of a special kind of photonic crystal fiber containing two side holes filled with Indium metal. The modulation of the fiber birefringence is accomplished through the stress field induced by the expansion of the metal. Although the fiber was made at low gas pressures during the indium infiltration process, the birefringence showed anomalous property at a relatively low temperature value, which is completely different from those reported in conventional-like fibers with two holes filled with metal. By modeling the anisotropic changes induced by the metal expansion to the refractive indexmore » within the fiber, we are able to reproduce the experimental results. Our results have practical relevance for the design of devices based on this technology.« less

Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Emelyanov, V. M.; Rybalchenko, D. V.

Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of ~80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers inmore » the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.« less

21 CFR 182.2437 - Magnesium silicate.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 3 2014-04-01 2014-04-01 false Magnesium silicate. 182.2437 Section 182.2437 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) SUBSTANCES GENERALLY RECOGNIZED AS SAFE Anticaking Agents § 182.2437 Magnesium silicate. (a) Product. Magnesium...

Novel Routes to Tune Thermal Conductivities and Thermoelectric Properties of Materials

DTIC Science & Technology

2012-11-15

expand the possibilities of borides as functional compou nds. A series of indium-free novel TCO compounds with novel crystal structures, has...powerful methods for modification were demonstrated in the borides , silicides and oxides. Introduction: The goal of this project is to...the possibility to modify the crystal structures can expand the possibilities of borides as functional compounds. A series of indium-free novel TCO

The role of water in the synthesis of indium nanoparticles.

PubMed

Dreyfuss, Sébastien; Pradel, Christian; Vendier, Laure; Mallet-Ladeira, Sonia; Mézailles, Nicolas

2016-12-06

We report the water-assisted synthesis of indium nanoparticles (In NPs). We found that a precise amount of water was necessary to allow the formation of the desired 7 nm In NPs: the oxidation of the In surface by water inhibits the growth of NPs as well as subsequent reactivity with white phosphorus (P 4 ). A novel surface activation method based on the use of organosilanes is presented.

Active spacecraft potential control: An ion emitter experiment. [Cluster mission

NASA Technical Reports Server (NTRS)

Riedler, W.; Goldstein, R.; Hamelin, M.; Maehlum, B. N.; Troim, J.; Olsen, R. C.; Pedersen, A.; Grard, R. J. L.; Schmidt, R.; Rudenauer, F.

1988-01-01

The cluster spacecraft are instrumented with ion emitters for charge neutralization. The emitters produce indium ions at 6 keV. The ion current is adjusted in a feedback loop with instruments measuring the spacecraft potential. The system is based on the evaporation of indium in the apex field of a needle. The design of the active spacecraft potential control instruments, and the ion emitters is presented.

Modeling and Simulation of a Dual-Junction CIGS Solar Cell Using Silvaco ATLAS

DTIC Science & Technology

2012-12-01

junction Copper Indium Gallium Selenide (CIGS) photovoltaic cell is investigated in this thesis. Research into implementing a dual-junction solar cell...Silvaco ATLASTM model of a single CIGS cell was created by utilizing actual solar cell parameters (such as layer thicknesses, gallium ratio, doping...THIS PAGE INTENTIONALLY LEFT BLANK v ABSTRACT The potential of designing a dual-junction Copper Indium Gallium Selenide (CIGS) photovoltaic

Purchase of a Raman and Photoluminescence Imaging System for Characterization of Advanced Electrochemical and Electronic Materials

DTIC Science & Technology

2016-01-05

regularly used the Raman imaging system to characterize the doping chemistry of colloidal indium nitride nanoparticles . This material shows an interesting...regularly used the Raman imaging system to characterize the doping chemistry of colloidal indium nitride nanoparticles . This material shows an...analysis of thin film coatings, bulk materials, powders and nanoparticles . The instrument is extensively used to characterize advanced electrochemical and

DARPA Perspectives on Multifunctional Materials/Power and Energy

DTIC Science & Technology

2012-08-09

In-situ growth of aligned CNTs Electronics Graphene /Metal oxide CMOS interconnects Erosion Diamond/ZnS LWIR missile domes Tribology TiN/Carbon...application Optoelectronics InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel...InGaN LEDs Energy ZnSnN2 Photovoltaics Optoelectronics Indium Tin Oxide/ Polycarbonate Anti-corrosion Paint /Steel Tribology TiN/High speed

Structural, optical, and electrical properties of NiO-In composite films deposited by radio frequency cosputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Sheng-Chi, E-mail: chensc@mail.mcut.edu.tw; Wen, Chao-Kuang; Lin, Yu-Chin

2014-03-15

In-doped NiO films with indium concentrations ranging from 0 to 30.3 at. % were deposited on glass substrates to investigate corresponding structural, optical, and electrical property variations. The x-ray diffraction patterns show that all films display only NiO peaks. When In atoms were added to NiO films, the NiO peaks shifted to lower angles, indicating that the lattice parameters of the films increased due to the larger In ions substituting for the smaller Ni ions. An electrical resistivity (ρ) too high to be measured occurred when the indium concentration in the NiO film was less than 15.6 at. %. Themore » ρ value dropped significantly to 0.06 Ω·cm as the indium concentration increased to 26.9 at. %. Upon further raising the In to 30.3 at. %, the ρ value decreased further to 0.01 Ω·cm. All the In-doped NiO films showed n-type conduction. The transmittance of undoped NiO film is as high as 96%. On raising the indium concentration to 15.6, 19.9, 26.9, and 30.3 at. %, the transmittances decreased further to 68%, 62%, 57%, and 47%, respectively. Introducing higher In concentrations improved the films’ thermal stability of electrical resistivity.« less

Shape-transformable liquid metal nanoparticles in aqueous solution† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c7sc00057j Click here for additional data file.

PubMed Central

Lin, Yiliang; Liu, Yang

2017-01-01

Stable suspensions of eutectic gallium indium (EGaIn) liquid metal nanoparticles form by probe-sonicating the metal in an aqueous solution. Positively-charged molecular or macromolecular surfactants in the solution, such as cetrimonium bromide or lysozyme, respectively, stabilize the suspension by interacting with the negative charges of the surface oxide that forms on the metal. The liquid metal breaks up into nanospheres via sonication, yet can transform into rods of gallium oxide monohydroxide (GaOOH) via moderate heating in solution either during or after sonication. Whereas heating typically drives phase transitions from solid to liquid (via melting), here heating drives the transformation of particles from liquid to solid via oxidation. Interestingly, indium nanoparticles form during the process of shape transformation due to the selective removal of gallium. This dealloying provides a mechanism to create indium nanoparticles at temperatures well below the melting point of indium. To demonstrate the versatility, we show that it is possible to shape transform and dealloy other alloys of gallium including ternary liquid metal alloys. Scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDS) mapping, and X-ray diffraction (XRD) confirm the dealloying and transformation mechanism. PMID:28580116

A novel precursor system and its application to produce tin doped indium oxide.

PubMed

Veith, M; Bubel, C; Zimmer, M

2011-06-14

A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

PubMed Central

Li, Ying-Chang; Chang, Liann-Be; Chen, Hou-Jen; Yen, Chia-Yi; Pan, Ke-Wei; Huang, Bohr-Ran; Kuo, Wen-Yu; Chow, Lee; Zhou, Dan; Popko, Ewa

2017-01-01

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications. PMID:28772792

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Preparation of cuxinygazsen precursor films and powders by electroless deposition

DOEpatents

Bhattacharya, Raghu N.; Batchelor, Wendi Kay; Wiesner, Holm; Ramanathan, Kannan; Noufi, Rommel

1999-01-01

A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising: preparing an aqueous bath solution of compounds selected from the group consisting of: I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3); adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; and initiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) from the aqueous bath solution onto a metallic substrate.

Effect of replacement of tin doped indium oxide (ITO) by ZnO: analysis of environmental impact categories

NASA Astrophysics Data System (ADS)

Ziemińska-Stolarska, Aleksandra; Barecka, Magda; Zbiciński, Ireneusz

2017-10-01

Abundant use of natural resources is doubtlessly one of the greatest challenges of sustainable development. Process alternatives, which enable sustainable manufacturing of valuable products from more accessible resources, are consequently required. One of examples of limited resources is Indium, currently broadly used for tin doped indium oxide (ITO) for production of transparent conductive films (TCO) in electronics industry. Therefore, candidates for Indium replacement, which would offer as good performance as the industrial state-of-the-art technology based on ITO are widely studied. However, the environmental impact of new layers remains unknown. Hence, this paper studies the environmental effect of ITO replacement by zinc oxide (ZnO) by means life cycle assessment (LCA) methodology. The analysis enables to quantify the environmental impact over the entire period of life cycle of products—during manufacturing, use phase and waste generation. The analysis was based on experimental data for deposition process. Further, analysis of different impact categories was performed in order to determine specific environmental effects related to technology change. What results from the analysis, is that ZnO is a robust alternative material for ITO replacement regarding environmental load and energy efficiency of deposition process which is also crucial for sustainable TCO layer production.

High Pressure Response of Siliceous Materials

DTIC Science & Technology

2013-02-01

iron-containing soda lime silicate glass, opal (a hydrated silicate glass), ROBAX glass ceramic, and others were single crystal (α-quartz) and...10 2.6. Opal (hydrated amorphous silica...Raman spectrum as a function of stress for opal (hydrated silica) glass. ................... 29 4.9. Raman spectrum as a function of stress for

The stripping of penetration 85-100 asphalt from silicate aggregate rocks : a laboratory study.

DOT National Transportation Integrated Search

1972-01-01

In Virginia stripping has occurred when certain of the acidic silicate rocks have been used as aggregate in bituminous paving. The purpose of this project was to discover which kinds of silicate aggregate would be most apt to remain well bonded in bi...

Carbonate formation in non-aqueous environments by solid-gas carbonation of silicates

NASA Astrophysics Data System (ADS)

Day, S. J.; Thompson, S. P.; Evans, A.; Parker, J. E.

2012-02-01

We have produced synthetic analogues of cosmic silicates using the Sol Gel method, producing amorphous silicates of composition Mg(x)Ca(1-x)SiO3. Using synchrotron X-ray powder diffraction on Beamline I11 at the Diamond Light Source, together with a newly-commissioned gas cell, real-time powder diffraction scans have been taken of a range of silicates exposed to CO2 under non-ambient conditions. The SXPD is complemented by other techniques including Raman and Infrared Spectroscopy and SEM imaging.

Microstructures of Rare Silicate Stardust from Nova and Supernovae

NASA Technical Reports Server (NTRS)

Nguyen, A. N.; Keller, L. P.; Rahman, Z.; Messenger, S

2011-01-01

Most silicate stardust analyzed in the laboratory and observed around stellar environments derives from O-rich red giant and AGB stars [1,2]. Supernova (SN) silicates and oxides are comparatively rare, and fewer than 10 grains from no-va or binary star systems have been identified to date. Very little is known about dust formation in these stellar environments. Mineralogical studies of only three O-rich SN [3-5] and no nova grains have been performed. Here we report the microstructure and chemical makeup of two SN silicates and one nova grain.

Sol-gel-derived double-layered nanocrystal memory

NASA Astrophysics Data System (ADS)

Ko, Fu-Hsiang; You, Hsin-Chiang; Lei, Tan-Fu

2006-12-01

The authors have used the sol-gel spin-coating method to fabricate a coexisting hafnium silicate and zirconium silicate double-layered nanocrystal (NC) memories. From transmission electron microscopic and x-ray photoelectron spectroscopic analyses, the authors determined that the hafnium silicate and zirconium silicate NCs formed after annealing at 900°C for 1min. When using channel hot electron injection for charging and band-to-band tunneling-induced hot hole injection for discharging, the NC memories exhibited superior Vth shifting because of the higher probability for trapping the charge carrier.

Silicate-catalyzed chemical grouting compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1972-09-28

Chemical grouting compositions for stabilizing earth, sand, and other porous particulate formations or agglomerates of solids are described. The composition for producing a chemically grouting structure consists of an aqueous base solution of: (1) vegetative polyphenolic material consisting of condensed type tannins, and an aqueous catalyst solution of (2) a water-soluble alkali metal silicate. The polyphenolic material is present in an amount from 5% to 40% based on the weight of the base solution, and the water- soluble alkali metal silicate is present in an amount to provide from 1% to 15% SiOD2U in the silicate compound based on themore » weight of the polyphenolic material. These grouting compositions are completely safe to operating personnel and to surrounding environment, since the potassium or sodium silicate catalysts are nontoxic. (15 claims)« less

Carbonation of metal silicates for long-term CO.sub.2 sequestration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blencoe, James G.; Palmer, Donald A.; Anovitz, Lawrence M.

In a preferred embodiment, the invention relates to a process of sequestering carbon dioxide. The process comprises the steps of: (a) reacting a metal silicate with a caustic alkali-metal hydroxide to produce a hydroxide of the metal formerly contained in the silicate; (b) reacting carbon dioxide with at least one of a caustic alkali-metal hydroxide and an alkali-metal silicate to produce at least one of an alkali-metal carbonate and an alkali-metal bicarbonate; and (c) reacting the metal hydroxide product of step (a) with at least one of the alkali-metal carbonate and the alkali-metal bicarbonate produced in step (b) to producemore » a carbonate of the metal formerly contained in the metal silicate of step (a).« less

Pumping Iron and Silica Bodybuilding

NASA Astrophysics Data System (ADS)

Mcnair, H.; Brzezinski, M. A.; Krause, J. W.; Parker, C.; Brown, M.; Coale, T.; Bruland, K. W.

2016-02-01

The availability of dissolved iron influences the stoichiometry of nutrient uptake by diatoms. Under nutrient replete conditions diatoms consume silicic acid and nitrate in a 1:1 ratio, this ratio increases under iron stress. Using the tracers 32Si and PDMPO, the total community and group-specific silica production rates were measured along a gradient of dissolved iron in an upwelling plume off the California coast. At each station, a control (ambient silicic acid) and +20 µM silicic acid treatment were conducted with each tracer to determine whether silicic acid limitation controlled the rate of silica production. Dissolved iron was 1.3 nmol kg-1 nearshore and decreased to 0.15 nmol kg-1 offshore. Silicic acid decreased more rapidly than nitrate, it was nearly 9 µM higher in the nearshore and 7 µM lower than nitrate in the middle of the transect where the iron concentration had decreased. The rate of diatom silica production decreased in tandem with silicic acid concentration, and silica production limitation by low silicic acid was most pronounced when iron concentrations were >0.4 nmol kg-1. The composition of the diatom assemblage shifted from Chaetoceros spp. dominated nearshore to a more sparse pennate-dominated assemblage offshore. Changes in taxa-specific silica production rates will be reported based on examination of PDMPO labeled cells using confocal microscopy.

A framework for predicting global silicate weathering and CO2 drawdown rates over geologic time-scales.

PubMed

Hilley, George E; Porder, Stephen

2008-11-04

Global silicate weathering drives long-time-scale fluctuations in atmospheric CO(2). While tectonics, climate, and rock-type influence silicate weathering, it is unclear how these factors combine to drive global rates. Here, we explore whether local erosion rates, GCM-derived dust fluxes, temperature, and water balance can capture global variation in silicate weathering. Our spatially explicit approach predicts 1.9-4.6 x 10(13) mols of Si weathered globally per year, within a factor of 4-10 of estimates of global silicate fluxes derived from riverine measurements. Similarly, our watershed-based estimates are within a factor of 4-18 (mean of 5.3) of the silica fluxes measured in the world's ten largest rivers. Eighty percent of total global silicate weathering product traveling as dissolved load occurs within a narrow range (0.01-0.5 mm/year) of erosion rates. Assuming each mol of Mg or Ca reacts with 1 mol of CO(2), 1.5-3.3 x 10(8) tons/year of CO(2) is consumed by silicate weathering, consistent with previously published estimates. Approximately 50% of this drawdown occurs in the world's active mountain belts, emphasizing the importance of tectonic regulation of global climate over geologic timescales.

Effect of Silicate Slag Application on Wheat Grown Under Two Nitrogen Rates

PubMed Central

White, Brandon; Tubana, Brenda S.; Babu, Tapasya; Mascagni, Henry; Agostinho, Flavia; Datnoff, Lawrence E.; Harrison, Steve

2017-01-01

Field studies were established on the alluvial floodplain soils in Louisiana, from 2013 to 2015, to evaluate the effect of silicate slag applications on productivity of wheat (Triticum aestivum), under sufficient and high nitrogen (N) application rates. Treatments were arranged in a randomized complete block design, with four replications consisting of twelve treatments: a factorial combination of two N (101 and 145 kg N ha−1) and five silicate slag rates (0, 1, 2, 4.5, and 9 Mg ha−1), and two control plots (with and without lime). Nitrogen had a greater impact on wheat productivity than silicate slag application. Wheat grain yield reached over 7000 kg ha−1 with applications of 145 kg N, and 9 Mg silicate slag per ha for soil having Si level <20 mg kg−1. Yield increases due to N or Si were attributed to the increase in number of spike m−2 and grain number spike−1. Silicate slag application effectively raised soil pH, and availability of several plant-essential nutrients, including plant-available N (nitrate, NO3−), demonstrating the benefits of slag application are beyond increasing plant-available Si. The benefits of silicate slag application were clearly observed in wheat supplied with high N, and on soil with low plant-available Si. PMID:29019922

Discovery of Ni-smectite-rich saprolite at Loma Ortega, Falcondo mining district (Dominican Republic): geochemistry and mineralogy of an unusual case of "hybrid hydrous Mg silicate - clay silicate" type Ni-laterite

NASA Astrophysics Data System (ADS)

Tauler, Esperança; Lewis, John F.; Villanova-de-Benavent, Cristina; Aiglsperger, Thomas; Proenza, Joaquín A.; Domènech, Cristina; Gallardo, Tamara; Longo, Francisco; Galí, Salvador

2017-10-01

Hydrous Mg silicate-type Ni-laterite deposits, like those in the Falcondo district, Dominican Republic, are dominated by Ni-enriched serpentine and garnierite. Recently, abundant Ni-smectite in the saprolite zone have been discovered in Loma Ortega, one of the nine Ni-laterite deposits in Falcondo. A first detailed study on these Ni-smectites has been performed (μXRD, SEM, EPMA), in addition to a geochemical and mineralogical characterisation of the Loma Ortega profile (XRF, ICP-MS, XRD). Unlike other smectite occurrences in laterite profiles worldwide, the Loma Ortega smectites are trioctahedral and exhibit high Ni contents never reported before. These Ni-smectites may be formed from weathering of pyroxene and olivine, and their composition can be explained by the mineralogy and the composition of the Al-depleted, olivine-rich parent ultramafic rock. Our study shows that Ni-laterites are mineralogically complex, and that a hydrous Mg silicate ore and a clay silicate ore can be confined to the same horizon in the weathering profile, which has significant implications from a recovery perspective. In accordance, the classification of "hybrid hydrous Mg silicate - clay silicate" type Ni-laterite deposit for Loma Ortega would be more appropriate.

Silicate and carbonate mineral weathering in soil profiles developed on Pleistocene glacial drift (Michigan, USA): Mass balances based on soil water geochemistry

NASA Astrophysics Data System (ADS)

Jin, Lixin; Williams, Erika L.; Szramek, Kathryn J.; Walter, Lynn M.; Hamilton, Stephen K.

2008-02-01

Geochemistry of soil, soil water, and soil gas was characterized in representative soil profiles of three Michigan watersheds. Because of differences in source regions, parent materials in the Upper Peninsula of Michigan (the Tahquamenon watershed) contain only silicates, while those in the Lower Peninsula (the Cheboygan and the Huron watersheds) have significant mixtures of silicate and carbonate minerals. These differences in soil mineralogy and climate conditions permit us to examine controls on carbonate and silicate mineral weathering rates and to better define the importance of silicate versus carbonate dissolution in the early stage of soil-water cation acquisition. Soil waters of the Tahquamenon watershed are the most dilute; solutes reflect amphibole and plagioclase dissolution along with significant contributions from atmospheric precipitation sources. Soil waters in the Cheboygan and the Huron watersheds begin their evolution as relatively dilute solutions dominated by silicate weathering in shallow carbonate-free soil horizons. Here, silicate dissolution is rapid and reaction rates dominantly are controlled by mineral abundances. In the deeper soil horizons, silicate dissolution slows down and soil-water chemistry is dominated by calcite and dolomite weathering, where solutions reach equilibrium with carbonate minerals within the soil profile. Thus, carbonate weathering intensities are dominantly controlled by annual precipitation, temperature and soil pCO 2. Results of a conceptual model support these field observations, implying that dolomite and calcite are dissolving at a similar rate, and further dissolution of more soluble dolomite after calcite equilibrium produces higher dissolved inorganic carbon concentrations and a Mg 2+/Ca 2+ ratio of 0.4. Mass balance calculations show that overall, silicate minerals and atmospheric inputs generally contribute <10% of Ca 2+ and Mg 2+ in natural waters. Dolomite dissolution appears to be a major process, rivaling calcite dissolution as a control on divalent cation and inorganic carbon contents of soil waters. Furthermore, the fraction of Mg 2+ derived from silicate mineral weathering is much smaller than most of the values previously estimated from riverine chemistry.

The influence of oxalate-promoted growth of saponite and talc crystals

USGS Publications Warehouse

Schumann, Dirk; Hartman, Hyman; Eberl, Dennis D.; Sears, S. Kelly; Hesse, Reinhard; Vali, Hojatollah

2013-01-01

The intercalating growth of new silicate layers or metal hydroxide layers in the interlayer space of other clay minerals is known from various mixed-layer clay minerals such as illite-smectite (I-S), chlorite-vermiculite, and mica-vermiculite. In a recent study, the present authors proposed that smectite-group minerals can be synthesized from solution as new 2:1 silicate layers within the low-charge interlayers of rectorite. That study showed how oxalate catalyzes the crystallization of saponite from a silicate gel at low temperatures (60ºC) and ambient pressure. As an extension of this work the aim of the present study was to test the claim that new 2:1 silicate layers can be synthesized as new intercalating layers in the low-charge interlayers of rectorite and whether oxalate could promote such an intercalation synthesis. Two experiments were conducted at 60ºC and atmospheric pressure. First, disodium oxalate solution was added to a suspension of rectorite in order to investigate the effects that oxalate anions have on the structure of rectorite. In a second experiment, silicate gel of saponitic composition (calculated interlayer charge −0.33 eq/O10(OH)2) was mixed with a suspension of rectorite and incubated in disodium oxalate solution. The synthesis products were extracted after 3 months and analyzed by X-ray diffraction and high-resolution transmission electron microscopy (HRTEM). The treatment of ultrathin sections with octadecylammonium (nC = 18) cations revealed the presence of 2:1 layer silicates with different interlayer charges that grew from the silicate gel. The oxalate-promoted nucleation of saponite and talc crystallites on the rectorite led to the alteration and ultimately to the destruction of the rectorite structure. The change was documented in HRTEM lattice-fringe images. The crystallization of new 2:1 layer silicates also occurred within the expandable interlayers of rectorite but not as new 2:1 silicate layers parallel to the previous 2:1 silicate layers. Instead, they grew independently of any orientation predetermined by the rectorite crystal substrate and their crystallization was responsible for the destruction of the rectorite structure.

On the metallicity dependence of crystalline silicates in oxygen-rich asymptotic giant branch stars and red supergiants

NASA Astrophysics Data System (ADS)

Jones, O. C.; Kemper, F.; Sargent, B. A.; McDonald, I.; Gielen, C.; Woods, Paul M.; Sloan, G. C.; Boyer, M. L.; Zijlstra, A. A.; Clayton, G. C.; Kraemer, K. E.; Srinivasan, S.; Ruffle, P. M. E.

2012-12-01

We investigate the occurrence of crystalline silicates in oxygen-rich evolved stars across a range of metallicities and mass-loss rates. It has been suggested that the crystalline silicate feature strength increases with increasing mass-loss rate, implying a correlation between lattice structure and wind density. To test this, we analyse Spitzer Infrared Spectrograph and Infrared Space Observatory Short Wavelength Spectrometer spectra of 217 oxygen-rich asymptotic giant branch and 98 red supergiants in the Milky Way, the Large and Small Magellanic Clouds, and Galactic globular clusters. These encompass a range of spectral morphologies from the spectrally rich which exhibit a wealth of crystalline and amorphous silicate features to 'naked' (dust-free) stars. We combine spectroscopic and photometric observations with the GRAMS grid of radiative transfer models to derive (dust) mass-loss rates and temperature. We then measure the strength of the crystalline silicate bands at 23, 28 and 33 μm. We detect crystalline silicates in stars with dust mass-loss rates which span over 3 dex, down to rates of ˜10-9 M⊙ yr-1. Detections of crystalline silicates are more prevalent in higher mass-loss rate objects, though the highest mass-loss rate objects do not show the 23-μm feature, possibly due to the low temperature of the forsterite grains or it may indicate that the 23-μm band is going into absorption due to high column density. Furthermore, we detect a change in the crystalline silicate mineralogy with metallicity, with enstatite seen increasingly at low metallicity.

High Pressure Response of Siliceous Materials

DTIC Science & Technology

2013-02-01

quartz, Starphire soda lime silicate glass, hydrated Starphire, BOROFLOAT borosilicate glass, an iron-containing soda lime silicate glass, opal (a hydrated... Opal (hydrated amorphous silica). .............................................................................. 10 2.7. ROBAX glass ceramic...spectrum as a function of stress for BOROFLOAT borosilicate glass. .......... 29 4.8. Raman spectrum as a function of stress for opal (hydrated

Standards for electron probe microanalysis of silicates prepared by convenient method

NASA Technical Reports Server (NTRS)

Walter, L. S.

1966-01-01

Standard compositions suitable for electron probe microanalysis of various silicates are prepared by coprecipitation of specified salts with colloidal silica to form a gel which is decomposed into a powdered oxide mixture and compressed into thin pellets. These pellets of predetermined standard are compared with a silicate sample to determine its composition.

Geochemical and lithological factors in acid precipitation

Treesearch

James R. Kramer

1976-01-01

Acid precipitation is altered by interaction with rocks, sediment and soil. A calcareous region buffers even the most intense loading at pH ~8; an alumino silicate region with unconsolidated sediment buffers acid loadings at pH ~6.5; alumino silicate outcrops are generally acidified. Either FeOOH or alumino silicates are probable H+...

Continental erosion and the Cenozoic rise of marine diatoms

NASA Astrophysics Data System (ADS)

Cermeño, Pedro; Falkowski, Paul G.; Romero, Oscar E.; Schaller, Morgan F.; Vallina, Sergio M.

2015-04-01

Marine diatoms are silica-precipitating microalgae that account for over half of organic carbon burial in marine sediments and thus they play a key role in the global carbon cycle. Their evolutionary expansion during the Cenozoic era (66 Ma to present) has been associated with a superior competitive ability for silicic acid relative to other siliceous plankton such as radiolarians, which evolved by reducing the weight of their silica test. Here we use a mathematical model in which diatoms and radiolarians compete for silicic acid to show that the observed reduction in the weight of radiolarian tests is insufficient to explain the rise of diatoms. Using the lithium isotope record of seawater as a proxy of silicate rock weathering and erosion, we calculate changes in the input flux of silicic acid to the oceans. Our results indicate that the long-term massive erosion of continental silicates was critical to the subsequent success of diatoms in marine ecosystems over the last 40 My and suggest an increase in the strength and efficiency of the oceanic biological pump over this period.

Effect of silicate module of water glass on rheological parameters of poly(sodium acrylate)/sodium silicate hydrogels

NASA Astrophysics Data System (ADS)

Mastalska-Popiawska, J.; Izak, P.

2017-01-01

The poly(sodium acrylate)/sodium silicate hydrogels were synthesized in the presence of sodium thiosulphate and potassium persulphate as the redox initiators and N,N’-methylene-bisacrylamide as the cross-linking monomer. 20 wt% aqueous solution of sodium acrylate was polymerized together with water glass with different silicate modules (M) from 1.74 to 2.29, in three mass ratio of the monomer solution to the water glass 2:1, 1:1 and 1:2. Such obtained hybrid composites were rheologically tested using the oscillation method. It allowed to designate the crossover point during polymerization, as well as to define the viscoelastic properties of the casted hydrogel samples one week after the reaction. The obtained results of the oscillation measurements showed that cross-linking reaction proceeds very quickly and the lower the silicate module is, the process starts faster. After the completion of the reaction the silicate-polymer hydrogels are strongly elastic materials and the highest elasticity characterizes systems with the mass ratio 1:2, i.e. with the highest water glass content.

Synthesis, characterization and modelling of zinc and silicate co-substituted hydroxyapatite

PubMed Central

Friederichs, Robert J.; Chappell, Helen F.; Shepherd, David V.; Best, Serena M.

2015-01-01

Experimental chemistry and atomic modelling studies were performed here to investigate a novel ionic co-substitution in hydroxyapatite (HA). Zinc, silicate co-substituted HA (ZnSiHA) remained phase pure after heating to 1100°C with Zn and Si amounts of 0.6 wt% and 1.2 wt%, respectively. Unique lattice expansions in ZnSiHA, silicate Fourier transform infrared peaks and changes to the hydroxyl IR stretching region suggested Zn and silicate co-substitution in ZnSiHA. Zn and silicate insertion into HA was modelled using density functional theory (DFT). Different scenarios were considered where Zn substituted for different calcium sites or at a 2b site along the c-axis, which was suspected in singly substituted ZnHA. The most energetically favourable site in ZnSiHA was Zn positioned at a previously unreported interstitial site just off the c-axis near a silicate tetrahedron sitting on a phosphate site. A combination of experimental chemistry and DFT modelling provided insight into these complex co-substituted calcium phosphates that could find biomedical application as a synthetic bone mineral substitute. PMID:26040597

Continental erosion and the Cenozoic rise of marine diatoms

PubMed Central

Cermeño, Pedro; Falkowski, Paul G.; Romero, Oscar E.; Schaller, Morgan F.; Vallina, Sergio M.

2015-01-01

Marine diatoms are silica-precipitating microalgae that account for over half of organic carbon burial in marine sediments and thus they play a key role in the global carbon cycle. Their evolutionary expansion during the Cenozoic era (66 Ma to present) has been associated with a superior competitive ability for silicic acid relative to other siliceous plankton such as radiolarians, which evolved by reducing the weight of their silica test. Here we use a mathematical model in which diatoms and radiolarians compete for silicic acid to show that the observed reduction in the weight of radiolarian tests is insufficient to explain the rise of diatoms. Using the lithium isotope record of seawater as a proxy of silicate rock weathering and erosion, we calculate changes in the input flux of silicic acid to the oceans. Our results indicate that the long-term massive erosion of continental silicates was critical to the subsequent success of diatoms in marine ecosystems over the last 40 My and suggest an increase in the strength and efficiency of the oceanic biological pump over this period. PMID:25831504

Continental erosion and the Cenozoic rise of marine diatoms.

PubMed

Cermeño, Pedro; Falkowski, Paul G; Romero, Oscar E; Schaller, Morgan F; Vallina, Sergio M

2015-04-07

Marine diatoms are silica-precipitating microalgae that account for over half of organic carbon burial in marine sediments and thus they play a key role in the global carbon cycle. Their evolutionary expansion during the Cenozoic era (66 Ma to present) has been associated with a superior competitive ability for silicic acid relative to other siliceous plankton such as radiolarians, which evolved by reducing the weight of their silica test. Here we use a mathematical model in which diatoms and radiolarians compete for silicic acid to show that the observed reduction in the weight of radiolarian tests is insufficient to explain the rise of diatoms. Using the lithium isotope record of seawater as a proxy of silicate rock weathering and erosion, we calculate changes in the input flux of silicic acid to the oceans. Our results indicate that the long-term massive erosion of continental silicates was critical to the subsequent success of diatoms in marine ecosystems over the last 40 My and suggest an increase in the strength and efficiency of the oceanic biological pump over this period.

Silicate Crystal Formation in the Disk of an Erupting Star Artist Concept

NASA Image and Video Library

2009-05-13

This artist's concept illustrates how silicate crystals like those found in comets can be created by an outburst from a growing star. The image shows a young sun-like star encircled by its planet-forming disk of gas and dust. The silicate that makes up most of the dust would have begun as non-crystallized, amorphous particles. Streams of material are seen spiraling from the disk onto the star increasing its mass and causing the star to brighten and heat up dramatically. The outburst causes temperatures to rise in the star's surrounding disk. The animation (figure 1) zooms into the disk to show close-ups of silicate particles. When the disk warms from the star's outburst, the amorphous particles of silicate melt. As they cool off, they transform into forsterite (figure 2), a type of silicate crystal often found in comets in our solar system. In April 2008, NASA's Spitzer Space Telescope detected evidence of this process taking place on the disk of a young sun-like star called EX Lupi. http://photojournal.jpl.nasa.gov/catalog/PIA12008

A novel multifunctional pharmaceutical excipient: modification of the permeability of starch by processing with magnesium silicate.

PubMed

Rashid, Iyad; Al-Remawi, Mayyas; Leharne, Stephen A; Chowdhry, Babur Z; Badwan, Adnan

2011-06-15

A directly compressible excipient has been developed by co-processing starch with magnesium silicate. The foregoing was achieved either by co-precipitation of magnesium silicate onto different types of starch or by dry granulation of maize starch with magnesium silicate. A variety of techniques (permeability, water retention/swelling, compression analysis, scanning electron microscopy, tensile strength and disintegration/dissolution studies) were used to characterize these systems. The permeability of the formulations produced using the two methods was evaluated experimentally using Darcy's permeability law. Magnesium silicate, as an anti-adhering agent, increases the permeability of both maize and partially pregelatinized starch, resulting in compacts of high mechanical strength, short disintegration time and low lubricant sensitivity. Such advantages are evident when the properties of the physical mixture of maize starch with magnesium silicate are compared with the co-precipitation and dry granulation techniques. Formulation with this novel excipient system, using paracetamol as a model drug, indicated its suitability as a single multifunctional excipient. Copyright © 2011 Elsevier B.V. All rights reserved.

A mid-Permian chert event: widespread deposition of biogenic siliceous sediments in coastal, island arc and oceanic basins

USGS Publications Warehouse

Murchey, B.L.; Jones, D.L.

1992-01-01

Radiolarian and conodont of Permian siliceous rocks from twenty-three areas in teh the circum-Pacific and Mediterranean regions reveal a widespread Permian Chert Event during the middle Leonardian to Wordian. Radiolarian- and (or) sponge spicule-rich siliceous sediments accumulated beneath high productivity zones in coastal, island arc and oceanic basins. Most of these deposits now crop out in fault-bounded accreted terranes. Biogenic siliceous sediments did not accumulate in terranes lying beneath infertile waters including the marine sequences in terranes of northern and central Alaska. The Permian Chert Event is coeval with major phosphorite deposition along the western margin of Pangea (Phosphoria Formation and related deposits). A well-known analogue for this event is middle Miocene deposition of biogenic siliceous sediments beneath high productivity zones in many parts of the Pacific and concurrent deposition of phosphatic as well as siliceous sediments in basins along the coast of California. Interrelated factors associated with both the Miocene and Permian depositional events include plate reorientations, small sea-level rises and cool polar waters. ?? 1992.

Q-Speciation and Network Structure Evolution in Invert Calcium Silicate Glasses.

PubMed

Kaseman, Derrick C; Retsinas, A; Kalampounias, A G; Papatheodorou, G N; Sen, S

2015-07-02

Binary silicate glasses in the system CaO-SiO2 are synthesized over an extended composition range (42 mol % ≤ CaO ≤ 61 mol %), using container-less aerodynamic levitation techniques and CO2-laser heating. The compositional evolution of Q speciation in these glasses is quantified using (29)Si and (17)O magic angle spinning nuclear magnetic resonance spectroscopy. The results indicate progressive depolymerization of the silicate network upon addition of CaO and significant deviation of the Q speciation from the binary model. The equilibrium constants for the various Q species disproportionation reactions for these glasses are found to be similar to (much smaller than) those characteristic of Li (Mg)-silicate glasses, consistent with the corresponding trends in the field strengths of these modifier cations. Increasing CaO concentration results in an increase in the packing density and structural rigidity of these glasses and consequently in their glass transition temperature Tg. This apparent role reversal of conventional network-modifying cations in invert alkaline-earth silicate glasses are compared and contrasted with that in their alkali silicate counterparts.

Interpreting the 10 micron Astronomical Silicate Feature

NASA Astrophysics Data System (ADS)

Bowey, Janet E.

1998-11-01

10micron spectra of silicate dust in the diffuse medium towards Cyg OB2 no. 12 and towards field and embedded objects in the Taurus Molecular Cloud (TMC) were obtained with CGS3 at the United Kingdom Infrared Telescope (UKIRT). Cold molecular-cloud silicates are sampled in quiescent lines of sight towards the field stars Taurus-Elias 16 and Elias 13, whilst observations of the embedded young stellar objects HL Tau, Taurus-Elias 7 (Haro6-10) and Elias 18 also include emission from heated dust. To obtain the foreground silicate absorption profiles, featureless continua are estimated using smoothed astronomical and laboratory silicate emissivities. TMC field stars and Cyg OB2 no. 12 are modelled as photospheres reddened by foreground continuum and silicate extinction. Dust emission in the non-photospheric continua of HL Tau and Elias 7 (Haro6-10) is distinguished from foreground silicate absorption using a 10micron disk model, based on the IR-submm model of T Tauri stars by Adams, Lada & Shu (1988), with terms added to represent the foreground continuum and silicate extinction. The absorption profiles of HL Tau and Elias 7 are similar to that of the field star Elias 16. Fitted temperature indices of 0.43 (HL Tau) and 0.33 (Elias 7) agree with Boss' (1996) theoretical models of the 200-300K region, but are lower than those of IR-submm disks (0.5-0.61; Mannings & Emerson 1994); the modelled 10micron emission of HL Tau is optically thin, that of Elias 7 is optically thick. A preliminary arcsecond-resolution determination of the 10micron emissivity near θ1 Ori D in the Trapezium region of Orion and a range of emission temperatures (225-310K) are derived from observations by T. L. Hayward; this Ney-Allen emissivity is 0.6micron narrower than the Trapezium emissivity obtained by Forrest et al. (1975) with a large aperture. Published interstellar grain models, elemental abundances and laboratory studies of Solar System silicates (IDPs, GEMS and meteorites), the 10micron spectra of comets, interstellar silicates, synthetic silicates and terrestrial minerals, and the effects of laboratory processing on the 10micron spectra of crystalline and amorphous silicates are reviewed to provide insight into the mineralogy of interstellar silicate dust. The wavelengths of the peaks of the 10micron silicate profiles decrease between circumstellar, diffuse medium and molecular-cloud environments, indicating (after Gürtler & Henning 1986) that the amorphous pyroxene content of initially olivine-rich interstellar dust increases with time. This is accompanied by an increase in the FWHM of the features which indicates an increase in grain size and/or an increasing fraction of chemically-varied crystalline pyroxene. Fine structure in the Cyg OB2 no. 12, Elias 16, Elias 7, HL Tau profiles indicate that hydrated layer silicates similar to terrestrial serpentines, clays and talc may be a ubiquitous component of interstellar dust. At 10microns the narrow bands of mixed crystalline pyroxenes blend, making their identification difficult. Since no fine structure is observed near 11.2microns, the fraction of crystalline olivine is small. In geology direct olivine-plus-SiO2 to pyroxene reactions occur only at high pressure within the terrestrial mantle. Therefore the fraction of amorphous pyroxene is probably increased by the hydration of Mg-rich olivine to form a serpentine-like hydrated silicate, which is subsequently annealed to form a mixture of amorphous pyroxene and olivine. Terrestrial and laboratory olivine samples are readily converted to serpentine in the presence of water, and (after extended annealing) the first crystalline band to appear is the 11.2micron olivine feature frequently observed in cometary spectra.

Methylated silicates may explain the release of chlorinated methane from Martian soil

NASA Astrophysics Data System (ADS)

Bak, Ebbe N.; Jensen, Svend J. Knak; Nørnberg, Per; Finster, Kai

2016-01-01

The only organic compounds that have been detected in the Martian soil are simple chlorinated compounds released from heated surface material. However, the sources of the organic carbon are in dispute. Wind abraded silicates, which are widespread on the Martian surface, can sequester atmospheric methane which generates methylated silicates and thus could provide a mechanism for accumulation of reduced carbon in the surface soil. In this study we show that thermal volatilization of methylated silicates in the presence of perchlorate leads to the production of chlorinated methane. Thus, methylated silicates could be a source of the organic carbon released as chlorinated methane upon thermal volatilization of Martian soil samples. Further, our experiments show that the ratio of the different chlorinated compounds produced is dependent on the mass ratio of perchlorate to organic carbon in the soil.

Silicate Emission in the TW Hydrae Association

NASA Astrophysics Data System (ADS)

Sitko, Michael L.; Lynch, David K.; Russell, Ray W.

2000-11-01

The TW Hydrae association is the nearest young stellar association. Among its members are HD 98800, HR 4796A, and TW Hydrae itself, the nearest known classical T Tauri star. We have observed these three stars spectroscopically between 3 and 13 μm. In TW Hya, the spectrum shows a silicate emission feature that is similar to many other young stars' with protostellar disks. The 11.2 μm feature indicative of significant amounts of crystalline olivine is not as strong as in some young stars and solar system comets. In HR 4796A, the thermal emission in the silicate feature is very weak, suggesting little in the way of (small silicate) grains near the star. The silicate band of HD 98800 (observed by us, but also reported by Sylvester & Skinner) is intermediate in strength between TW Hya and HR 4796A.

Concentrations and behavior of oxygen and oxide ion in melts of composition CaO.MgO.xSiO2

NASA Technical Reports Server (NTRS)

Semkow, K. W.; Haskin, L. A.

1985-01-01

The behavior of oxygen and oxide ion in silicate melts was investigated through their electrochemical reactions at a platinum electrode. Values are given for the diffusion coefficient for molecular oxygen in diopside melt and the activation energy of diffusion. It is shown that molecular oxygen dissociates prior to undergoing reduction and that oxide ion reacts quickly with silicate polymers when it is produced. The concentration of oxide ion is kept low by a buffering effect of the silicate, the exact level being dependent on the silicate composition. Data on the kinetics of reaction of the dissociation of molecular oxygen and on the buffering reactions are provided. It is demonstrated that the data on oxygen in these silicate melts are consistent with those for solid buffers.

Humidity-induced room-temperature decomposition of Au contacted indium phosphide

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Weizer, Victor G.

1990-01-01

It has been found that Au-contacted InP is chemically unstable at room temperature in a humid ambient due to the leaching action of indium nitrate islands that continually remove In from the contact metallization and thus, in effect, from the Inp substrate. While similar appearing islands form on Au-contacted GaAs, that system appears to be stable since leaching of the group III element does not take place.

Surface smoothing of indium tin oxide film by laser-induced photochemical etching

NASA Astrophysics Data System (ADS)

Kang, JoonHyun; Kim, Young-Hwan; Kwon, Seok Joon; Park, Joon-Suh; Park, Kyoung Wan; Park, Jae-Gwan; Han, Il Ki

2017-12-01

Surface smoothing of indium tin oxide (ITO) film by laser irradiation was demonstrated. The ITO surface was etched by choline radicals, which were activated by laser irradiation at a wavelength of 532 nm. The RMS surface roughness was improved from 5.6 to 4.6 nm after 10 min of laser irradiation. We also showed the changes in the surface morphology of the ITO film with various irradiation powers and times.

Growth of Gallium Nitride Nanorods and Their Coalescence Overgrowth

DTIC Science & Technology

2012-09-07

absorption enhancements of amorphous silicon solar cells with periodical metal nanowall and nanopillar structures,” Optics Express, Vol. 20, No. S1, p...The obtained indium content can be slightly underestimated because certain incorporated indium atoms may diffuse out of the SSA image . However, such... luminescence InGaN/GaN quantum-well structures of various silicon -doping conditions,” Appl. Phys. Lett. 84, 2506-2508 (2004). 41. R. K. Debnath, R

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

NASA Astrophysics Data System (ADS)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Effect of Temperature on Nucleation of Nanocrystalline Indium Tin Oxide Synthesized by Electron-Beam Evaporation

NASA Astrophysics Data System (ADS)

Shen, Yan; Zhao, Yujun; Shen, Jianxing; Xu, Xiangang

2017-07-01

Indium tin oxide (ITO) has been widely applied as a transparent conductive layer and optical window in light-emitting diodes, solar cells, and touch screens. In this paper, crystalline nano-sized ITO dendrites are obtained using an electron-beam evaporation technique. The surface morphology of the obtained ITO was studied for substrate temperatures of 25°C, 130°C, 180°C, and 300°C. Nano-sized crystalline dendrites were synthesized only at a substrate temperature of 300°C. The dendrites had a cubic structure, confirmed by the results of x-ray diffraction and transmission electron microscopy. The growth mechanism of the nano-crystalline dendrites could be explained by a vapor-liquid-solid (VLS) growth model. The catalysts of the VLS process were indium and tin droplets, confirmed by varying the substrate temperature, which further influenced the nucleation of the ITO dendrites.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yang; Kidder, Michelle; Ruther, Rose E.

In this paper, we present a new class of catalysts, InMo-ZSM- 5, which can be prepared by indium impregnation of Mo-ZSM- 5. The incorporation of indium dramatically decreases coke formation during methane dehydroaromatization. The benzene and C 2 hydrocarbons selectivity among total hydrocarbons over InMo-ZSM- 5 remains comparable to that of Mo-ZSM- 5 despite reduced methane conversion due to decreased coke formation. We found 1 wt% indium to be optimal loading for reducing coke selectivity to half that of Mo-ZSM- 5. Characterization methods were not helpful in discerning the interaction of In with Mo but experiments with bimetallic 1In2Mo-ZSM- 5more » and mechanical mixture 1In+2Mo-ZSM- 5 suggest that In and Mo need to be in close proximity to suppress coke formation. Finally, this is supported by temperature programmed reduction experiments which show that In incorporation leads to lower Mo reduction temperature in In2Mo-ZMS- 5.« less

The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

PubMed Central

Boukhvalov, Danil W.; Gürbulak, Bekir; Duman, Songül; Wang, Lin; Caputi, Lorenzo S.; Chiarello, Gennaro; Cupolillo, Anna

2017-01-01

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed. PMID:29113090

Diagnostics of RF magnetron sputtering plasma for synthesizing transparent conductive Indium-Zinc-Oxide film

NASA Astrophysics Data System (ADS)

Ohta, Takayuki; Inoue, Mari; Takota, Naoki; Ito, Masafumi; Higashijima, Yasuhiro; Kano, Hiroyuki; den, Shoji; Yamakawa, Koji; Hori, Masaru

2009-10-01

Transparent conductive Oxide film has been used as transparent conducting electrodes of optoelectronic devices such as flat panel display, solar cells, and so on. Indium-Zinc-Oxide (IZO) has been investigated as one of promising alternatives Indium Tin Oxide film, due to amorphous, no nodule and so on. In order to control a sputtering process with highly precise, RF magnetron sputtering plasma using IZO composite target was diagnosed by absorption and emission spectroscopy. We have developed a multi-micro hollow cathode lamp which can emit simultaneous multi-atomic lines for monitoring Zn and In densities simultaneously. Zn and In densities were measured to be 10^9 from 10^10 cm-3 at RF power from 40 to 100 W, pressure of 5Pa, and Ar flow rate of 300 sccm. The emission intensities of Zn, In, InO, and Ar were also observed.

Mass measurements of neutron-rich indium isotopes toward the N =82 shell closure

NASA Astrophysics Data System (ADS)

Babcock, C.; Klawitter, R.; Leistenschneider, E.; Lascar, D.; Barquest, B. R.; Finlay, A.; Foster, M.; Gallant, A. T.; Hunt, P.; Kootte, B.; Lan, Y.; Paul, S. F.; Phan, M. L.; Reiter, M. P.; Schultz, B.; Short, D.; Andreoiu, C.; Brodeur, M.; Dillmann, I.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.; Dilling, J.

2018-02-01

Precise mass measurements of the neutron-rich In-130125 isotopes have been performed with the TITAN Penning trap mass spectrometer. TITAN's electron beam ion trap was used to charge breed the ions to charge state q =13 + thus providing the necessary resolving power to measure not only the ground states but also isomeric states at each mass number. In this paper, the properties of the ground states are investigated through a series of mass differentials, highlighting trends in the indium isotopic chain as compared to its proton-magic neighbor, tin (Z =50 ). In addition, the energies of the indium isomers are presented. The (8-) level in 128In is found to be 78 keV lower than previously thought and the (21 /2- ) isomer in 127In is shown to be lower than the literature value by more than 150 keV.

Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line

NASA Astrophysics Data System (ADS)

León Pérez, Edgar A. A.; Guenery, Pierre-Vincent; Abouzaid, Oumaïma; Ayadi, Khaled; Brottet, Solène; Moeyaert, Jérémy; Labau, Sébastien; Baron, Thierry; Blanchard, Nicholas; Baboux, Nicolas; Militaru, Liviu; Souifi, Abdelkader

2018-05-01

We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles in MIM structures. Our approach is based on the use of indium oxide (In2O3) nanoparticles embedded in a dielectric matrix using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. A bipolar switching behavior has been observed using current-voltage measurements (I-V) for all devices. Very high ION/IOFF ratios have been obtained up to 108. Our results provide insights for further integration of In2O3 nanoparticles-based devices for NVM applications. He is currently a Postdoctoral Researcher in the Institute of Nanotechnologies of Lyon (INL), INSA de Lyon, France, in the Electronics Department. His current research include indium oxide nanoparticles for non-volatile memory applications, and the integrations of these devices in CMOS BEOL.

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE PAGES

Si, W.; Zhang, C.; Wu, L.; ...

2015-09-01

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freytag, Stefan, E-mail: stefan.freytag@ovgu.de; Feneberg, Martin; Berger, Christoph

2016-07-07

In{sub x}Ga{sub 1–x}N/GaN single and multi quantum well (MQW) structures with x ≈ 0.13 were investigated optically by photoreflectance, photoluminescence excitation spectroscopy, and luminescence. Clear evidence of unintentional indium incorporation into the nominal GaN barrier layers is found. The unintentional In content is found to be around 3%. Inhomogeneous distribution of In atoms occurs within the distinct quantum well (QW) layers, which is commonly described as statistical alloy fluctuation and leads to the characteristic S-shape temperature shift of emission energy. Furthermore, differences in emission energy between the first and the other QWs of a MQW stack are found experimentally. Thismore » effect is discussed with the help of model calculations and is assigned to differences in the confining potential due to unwanted indium incorporation for the upper QWs.« less

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, Weidong, E-mail: wds@bnl.gov, E-mail: qiangli@bnl.gov; Zhang, Cheng; Wu, Lijun

2015-08-31

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. Withmore » large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Emission beyond 4  μm and mid-infrared lasing in a dysprosium-doped indium fluoride (InF3) fiber.

PubMed

Majewski, Matthew R; Woodward, Robert I; Carreé, Jean-Yves; Poulain, Samuel; Poulain, Marcel; Jackson, Stuart D

2018-04-15

Optical emission from rare-earth-doped fluoride fibers has thus far been limited to less than 4 μm. We extend emission beyond this limit by employing an indium fluoride (InF 3 ) glass fiber as the host, which exhibits an increased infrared transparency over commonly used zirconium fluoride (ZBLAN). Near-infrared pumping of a dysprosium-doped InF 3 fiber results in broad emission centered around 4.3 μm, representing the longest emission yet achieved from a fluoride fiber. The first laser emission in an InF 3 fiber is also demonstrated from the 3 μm dysprosium transition. Finally, a frequency domain excited state lifetime measurement comparison between fluoride hosts suggests that multiphonon effects are significantly reduced in indium fluoride fiber, paving the way to more efficient, longer wavelength lasers compared to ZBLAN fibers.

Enhancing heat capacity of colloidal suspension using nanoscale encapsulated phase-change materials for heat transfer.

PubMed

Hong, Yan; Ding, Shujiang; Wu, Wei; Hu, Jianjun; Voevodin, Andrey A; Gschwender, Lois; Snyder, Ed; Chow, Louis; Su, Ming

2010-06-01

This paper describes a new method to enhance the heat-transfer property of a single-phase liquid by adding encapsulated phase-change nanoparticles (nano-PCMs), which absorb thermal energy during solid-liquid phase changes. Silica-encapsulated indium nanoparticles and polymer-encapsulated paraffin (wax) nanoparticles have been made using colloid method, and suspended into poly-alpha-olefin (PAO) and water for potential high- and low-temperature applications, respectively. The shells prevent leakage and agglomeration of molten phase-change materials, and enhance the dielectric properties of indium nanoparticles. The heat-transfer coefficients of PAO containing indium nanoparticles (30% by mass) and water containing paraffin nanoparticles (10% by mass) are 1.6 and 1.75 times higher than those of corresponding single-phase fluids. The structural integrity of encapsulation allows repeated use of such nanoparticles for many cycles in high heat generating devices.

History of Nebular Processing Traced by Silicate Stardust in IDPS

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Keller, L. P.; Nakamura-Messenger, K.

2010-01-01

Chondritic porous interplanetary dust particles (CP-IDPs) may be the best preserved remnants of primordial solar system materials, in part because they were not affected by parent body hydrothermal alteration. Their primitive characteristics include fine grained, unequilibrated, anhydrous mineralogy, enrichment in volatile elements, and abundant molecular cloud material and silicate stardust. However, while the majority of CP-IDP materials likely derived from the Solar System, their formation processes and provenance are poorly constrained. Stardust abundances provide a relative measure of the extent of processing that the Solar System starting materials has undergone in primitive materials. For example, among primitive meteorites silicate stardust abundances vary by over two orders of magnitude (less than 10-200 ppm). This range of abundances is ascribed to varying extents of aqueous processing in the meteorite parent bodies. The higher average silicate stardust abundances among CP-IDPs (greater than 375 ppm) are thus attributable to the lack of aqueous processing of these materials. Yet, silicate stardust abundances in IDPs also vary considerably. While the silicate stardust abundance in IDPs having anomalous N isotopic compositions was reported to be 375 ppm, the abundance in IDPs lacking N anomalies is less than 10 ppm. Furthermore, these values are significantly eclipsed among some IDPs with abundances ranging from 2,000 ppm to 10,000 ppm. Given that CP-IDPs have not been significantly affected by parent body processes, the difference in silicate stardust abundances among these IDPs must reflect varying extents of nebular processing. Here we present recent results of a systematic coordinated mineralogical/isotopic study of large cluster IDPs aimed at (1) characterizing the mineralogy of presolar silicates and (2) delineating the mineralogical and petrographic characteristics of IDPs with differing silicate stardust abundances. One of the goals of this study is to better understand the earliest stages of evolution of the Solar System starting materials.

Three-dimensional culture of dental pulp stem cells in direct contact to tricalcium silicate cements.

PubMed

Widbiller, M; Lindner, S R; Buchalla, W; Eidt, A; Hiller, K-A; Schmalz, G; Galler, K M

2016-03-01

Calcium silicate cements are biocompatible dental materials applicable in contact with vital tissue. The novel tricalcium silicate cement Biodentine™ offers properties superior to commonly used mineral trioxide aggregate (MTA). Objective of this study was to evaluate its cytocompatibility and ability to induce differentiation and mineralization in three-dimensional cultures of dental pulp stem cells after direct contact with the material. Test materials included a new tricalcium silicate (Biodentine™, Septodont, Saint-Maur-des-Fossés, France), MTA (ProRoot® MTA, DENSPLY Tulsa Dental Specialities, Johnson City, TN, USA), glass ionomer (Ketac™ Molar Aplicap™, 3M ESPE, Seefeld, Germany), human dentin disks and polystyrene. Magnetic activated cell sorting for to the surface antigen STRO-1 was performed to gain a fraction enriched with mesenchymal stem cells. Samples were allowed to set and dental pulp stem cells in collagen carriers were placed on top. Scanning electron microscopy of tricalcium silicate cement surfaces with and without cells was conducted. Cell viability was measured for 14 days by MTT assay. Alkaline phosphatase activity was evaluated (days 3, 7, and 14) and expression of mineralization-associated genes (COL1A1, ALP, DSPP, and RUNX2) was quantified by real-time quantitative PCR. Nonparametric statistical analysis for cell viability and alkaline phosphatase data was performed to compare different materials as well as time points (Mann-Whitney U test, α = 0.05). Cell viability was highest on tricalcium silicate cement, followed by MTA. Viability on glass ionomer cement and dentin disks was significantly lower. Alkaline phosphatase activity was lower in cells on new tricalcium silicate cement compared to MTA, whereas expression patterns of marker genes were alike. Increased cell viability and similar levels of mineralization-associated gene expression in three-dimensional cell cultures on the novel tricalcium silicate cement and mineral trioxide aggregate indicate that the material is cytocompatible and bioactive. The tested new tricalcium silicate cement confirms its suitability as an alternative to MTA in vital pulp therapy.

The stable Cr isotopic compositions of chondrites and silicate planetary reservoirs

NASA Astrophysics Data System (ADS)

Schoenberg, Ronny; Merdian, Alexandra; Holmden, Chris; Kleinhanns, Ilka C.; Haßler, Kathrin; Wille, Martin; Reitter, Elmar

2016-06-01

The depletion of chromium in Earth's mantle (∼2700 ppm) in comparison to chondrites (∼4400 ppm) indicates significant incorporation of chromium into the core during our planet's metal-silicate differentiation, assuming that there was no significant escape of the moderately volatile element chromium during the accretionary phase of Earth. Stable Cr isotope compositions - expressed as the ‰-difference in 53Cr/52Cr from the terrestrial reference material SRM979 (δ53/52CrSRM979 values) - of planetary silicate reservoirs might thus yield information about the conditions of planetary metal segregation processes when compared to chondrites. The stable Cr isotopic compositions of 7 carbonaceous chondrites, 11 ordinary chondrites, 5 HED achondrites and 2 martian meteorites determined by a double spike MC-ICP-MS method are within uncertainties indistinguishable from each other and from the previously determined δ53/52CrSRM979 value of -0.124 ± 0.101‰ for the igneous silicate Earth. Extensive quality tests support the accuracy of the stable Cr isotope determinations of various meteorites and terrestrial silicates reported here. The uniformity in stable Cr isotope compositions of samples from planetary silicate mantles and undifferentiated meteorites indicates that metal-silicate differentiation of Earth, Mars and the HED parent body did not cause measurable stable Cr isotope fractionation between these two reservoirs. Our results also imply that the accretionary disc, at least in the inner solar system, was homogeneous in its stable Cr isotopic composition and that potential volatility loss of chromium during accretion of the terrestrial planets was not accompanied by measurable stable isotopic fractionation. Small but reproducible variations in δ53/52CrSRM979 values of terrestrial magmatic rocks point to natural stable Cr isotope variations within Earth's silicate reservoirs. Further and more detailed studies are required to investigate whether silicate differentiation processes, such as partial mantle melting and crystal fractionation, can cause stable Cr isotopic fractionation on Earth and other planetary bodies.

Pockels effect of silicate glass-ceramics: Observation of optical modulation in Mach–Zehnder system

PubMed Central

Yamaoka, Kazuki; Takahashi, Yoshihiro; Yamazaki, Yoshiki; Terakado, Nobuaki; Miyazaki, Takamichi; Fujiwara, Takumi

2015-01-01

Silicate glass has been used for long time because of its advantages from material’s viewpoint. In this paper, we report the observation of Pockels effect by Mach–Zehnder interferometer in polycrystalline ceramics made from a ternary silicate glass via crystallization due to heat-treatment, i.e., glass-ceramics. Since the silicate system is employed as the precursor, merits of glass material are fully utilized to fabricate the optical device component, in addition to that of functional crystalline material, leading us to provide an electro-optic device, which is introducible into glass-fiber network. PMID:26184722

Alkali Silicate Vehicle Forms Durable, Fireproof Paint

NASA Technical Reports Server (NTRS)

Schutt, John B.; Seindenberg, Benjamin

1964-01-01

The problem: To develop a paint for use on satellites or space vehicles that exhibits high resistance to cracking, peeling, or flaking when subjected to a wide range of temperatures. Organic coatings will partially meet the required specifications but have the inherent disadvantage of combustibility. Alkali-silicate binders, used in some industrial coatings and adhesives, show evidence of forming a fireproof paint, but the problem of high surface-tension, a characteristic of alkali silicates, has not been resolved. The solution: Use of a suitable non-ionic wetting agent combined with a paint incorporating alkali silicate as the binder.

The Effect of Specific Surface Area of Chitin-Metal Silicate Coprocessed Excipient on the Chemical Decomposition of Cefotaxime Sodium.

PubMed

Al-Nimry, Suhair S; Alkhamis, Khouloud A; Alzarieni, Kawthar Z

2017-02-01

Chitin-metal silicates are multifunctional excipients used in tablets. Previously, a correlation between the surface acidity of chitin-calcium and chitin-magnesium silicate and the chemical decomposition of cefotaxime sodium was found but not with chitin-aluminum silicate. This lack of correlation could be due to the catalytic effect of silica alumina or the difference in surface area of the excipients. The objective of this study was to investigate the effect of the specific surface area of the excipient on the chemical decomposition of cefotaxime sodium in the solid state. Chitin was purified and coprocessed with different metal silicates to prepare the excipients. The specific surface area was determined using gas adsorption. The chemical decomposition was studied at constant temperature and relative humidity. Also, the degradation in solution was studied. A correlation was found between the degradation rate constant and the surface area of chitin-aluminum and chitin-calcium silicate but not with chitin-magnesium silicate. This was due to the small average pore diameter of this excipient. Also, the degradation in solution was slower than in solid state. In conclusion, the stability of cefotaxime sodium was dependent on the surface area of the excipient in contact with the drug. Copyright © 2017 American Pharmacists Association®. Published by Elsevier Inc. All rights reserved.

High Pressure/Temperature Metal Silicate Partitioning of Tungsten

NASA Technical Reports Server (NTRS)

Shofner, G. A.; Danielson, L.; Righter, K.; Campbell, A. J.

2010-01-01

The behavior of chemical elements during metal/silicate segregation and their resulting distribution in Earth's mantle and core provide insight into core formation processes. Experimental determination of partition coefficients allows calculations of element distributions that can be compared to accepted values of element abundances in the silicate (mantle) and metallic (core) portions of the Earth. Tungsten (W) is a moderately siderophile element and thus preferentially partitions into metal versus silicate under many planetary conditions. The partitioning behavior has been shown to vary with temperature, silicate composition, oxygen fugacity, and pressure. Most of the previous work on W partitioning has been conducted at 1-bar conditions or at relatively low pressures, i.e. <10 GPa, and in two cases at or near 20 GPa. According to those data, the stronger influences on the distribution coefficient of W are temperature, composition, and oxygen fugacity with a relatively slight influence in pressure. Predictions based on extrapolation of existing data and parameterizations suggest an increased pressured dependence on metal/ silicate partitioning of W at higher pressures 5. However, the dependence on pressure is not as well constrained as T, fO2, and silicate composition. This poses a problem because proposed equilibration pressures for core formation range from 27 to 50 GPa, falling well outside the experimental range, therefore requiring exptrapolation of a parametereized model. Higher pressure data are needed to improve our understanding of W partitioning at these more extreme conditions.

Inhibition and enhancement of microbial surface colonization: the role of silicate composition

USGS Publications Warehouse

Roberts, Jennifer A.

2004-01-01

Classical treatment of cell attachment by models of filtration or coulombic attraction assumes that attachment of cells to mineral surfaces would be controlled by factors such as response to predation, collision efficiency, or coulombic attraction between the charged groups at the mineral and cell surfaces. In the study reported here, the passive model of attachment was investigated using a native microbial consortium and a variety of Al- and Fe-bearing silicates and oxides to determine if other controls, such as mineral composition, also influence the interaction between cells and surfaces. Results from in situ colonization studies in an anaerobic groundwater at pH 6.8 combined with most probable number analyses (MPN) of surface-adherent cells demonstrate that electrostatic effects dominate microbial colonization on positively charged oxide surfaces regardless of mineral composition. In contrast, on negatively charged silicate minerals and glasses, the solid phase composition is a factor in determining the extent of microbial colonization, as well as the diversity of the attached community. In particular, silicates containing more than 1.2% Al exhibit less biomass than Al-poor silicates and MPN suggests a shift in community diversity, possibly indicating Al toxicity on these surfaces. When Fe is present in the silicate, however, this trend is reversed and abundant colonization of the surface is observed. Here, microorganisms preferentially colonize those silicate surfaces that offer beneficial nutrients and avoid those that contain potentially toxic elements.

Thermochemistry of amorphous and crystalline zirconium and hafnium silicates.

NASA Astrophysics Data System (ADS)

Ushakov, S.; Brown, C. E.; Navrotsky, Alexandra; Boatner, L. A.; Demkov, A. A.; Wang, C.; Nguyen, B.-Y.

2003-03-01

Calorimetric investigation of amorphous and crystalline zirconium and hafnium silicates was performed as part of a research program on thermochemistry of alternative gate dielectrics. Amorphous hafnium and zirconium silicates with varying SiO2 content were synthesized by a sol-gel process. Crystalline zirconium and hafnium silicates (zircon and hafnon) were synthesized by solid state reaction at 1450 °C from amorphous gels and grown as single crystals from flux. High temperature oxide melt solution calorimetry in lead borate (2PbO.B2O3) solvent at 800 oC was used to measure drop solution enthalpies for amorphous and crystalline zirconium and hafnium silicates and corresponding oxides. Applying appropriate thermochemical cycles, formation enthalpy of crystalline ZrSiO4 (zircon) from binary oxides (baddeleite and quartz) at 298 K was calculated as -23 +/-2 kJ/mol and enthalpy difference between amorphous and crystalline zirconium silicate (vitrification enthalpy) was found to be 61 +/-3 kJ/mol. Crystallization onset temperatures of amorphous zirconium and hafnium silicates, as measured by differential scanning calorimetry (DSC), increased with silica content. The resulting crystalline phases, as characterized by X-ray diffraction (XRD), were tetragonal HfO2 and ZrO2. Critical crystallite size for tetragonal to monoclinic transformation of HfO2 in the gel was estimated as 6 +/-2 nm from XRD data Crystallization enthalpies per mole of hafnia and zirconia in gels decrease slightly together with crystallite size with increasing silica content, for example from -22 to -15 +/-1 kJ per mol of HfO2 crystallized at 740 and 1006 °C from silicates with 10 and 70 mol Applications of thermal analyses and solution calorimetry techniques together with first-principles density functional calculations to estimate interface and surface energies are discussed.

Partitioning of Mo, P and other siderophile elements (Cu, Ga, Sn, Ni, Co, Cr, Mn, V, and W) between metal and silicate melt as a function of temperature and silicate melt composition

NASA Astrophysics Data System (ADS)

Righter, K.; Pando, K. M.; Danielson, L.; Lee, Cin-Ty

2010-03-01

Metal-silicate partition coefficients can provide information about the earliest differentiation histories of terrestrial planets and asteroids. Systematic studies of the effects of key parameters such as temperature and melt composition are lacking for many elements. In particular, data for Mo is scarce, but given its refractory nature, is of great value in interpreting metal-silicate equilibrium. Two series of experiments have been carried out to study Mo and P partitioning between Fe metallic liquid and basaltic to peridotitic silicate melt, at 1 GPa and temperatures between 1500 and 1900 °C. Because the silicate melt utilized was natural basalt, there are also measurable quantities of 9 other siderophile elements (Ni, Co, W, Sn, Cu, Mn, V, Cr, Ga and Zn). The Ni and Co data can be used to assess consistency with previous studies. In addition, the new data also allow a first systematic look at the temperature dependence of Cu, Ga, Sn, Cr, Mn V and W for basaltic to peridotitic melts. Many elements exhibit an increase in siderophile behavior at higher temperature, contrary to popular belief, but consistent with predictions from thermodynamics. Using these new data we examine DMomet/sil and DPmet/sil in detail and show that increasing temperature causes a decrease in the former and an increase in the latter, whereas both increase with MgO content of the silicate melt. The depletions of Mo and P in the mantle of the Earth can be explained by metal-silicate equilibrium at magma ocean conditions — both elements are satisfied at PT conditions of an intermediate depth magma ocean for the Earth 22.5 GPa and 2400 °C.

Physical processes affecting availability of dissolved silicate for diatom production in the Arabian Sea

NASA Technical Reports Server (NTRS)

Young, David K.; Kindle, John C.

1994-01-01

A passive tracer to represent dissolved silicate concentrations, with biologically realistic uptake kinetics, is successfully incorporated into a three-dimensional, eddy-resolving, ocean circulation model of the Indian Ocean. Hypotheses are tested to evaluate physical processes which potentially affect the availability of silicate for diatom production in the Arabian Sea. An alternative mechanism is offered to the idea that open ocean upwelling is primarily responsible for the high, vertical nutrient flux and consequent large-scale phytoplankton bloom in the northwestern Arabian Sea during the southwest monsoon. Model results show that dissolved silicate in surface waters available for uptake by diatoms is primarily influenced by the intensity of nearshore upwelling from soutwest monsoonal wind forcing and by the offshore advective transport of surface waters. The upwelling, which in the model occurs within 200 +/- 50 km of the coast, appears to be a result of a combination of coastal upwelling, Elkman pumping, and divergence of the coastal flow as it turns offshore. Localized intensifications of silicate concentrations appear to be hydrodynamically driven and geographically correlated to coastal topographic features. The absence of diatoms in sediments of the eastern Arabian Basin is consistent with modeled distributional patterns of dissolved silicate resulting from limited westward advection of upwelled coastal waters from the western continental margin of India and rapid uptake of available silicate by diatoms. Concentrations of modeled silicate become sufficiently low to become unavailable for diatom production in the eastern Arabian Sea, a region between 61 deg E and 70 deg E at 8 deg N on the south, with the east and west boundaries converging on the north at approximately 67 deg E, 20 deg N.

Emission, fate and effects of soluble silicates (waterglass) in the aquatic environment.

PubMed

van Dokkum, Henno P; Hulskotte, Ian H J; Kramer, Kees J M; Wilmot, Joël

2004-01-15

Soluble silicates, commercially known as waterglass, are among the largest volume synthetic chemicals in the world. Silicon from waterglass is rapidly transformed to the biologically active orthosilicic acid (referred to as dissolved silicate). This paper aims to assess the impact of waterglass on the aquatic environment in Western Europe. The emission to surface waters from the four most relevant application areas, household detergents, pulp and paper production, water and wastewater treatment, and soil stabilization, is estimated to be ca. 88-121 kton of SiO2 per year. This is a small fraction (<2%) of the estimated total amount of dissolved silicate transported by rivers to the oceans. Locally, increases in dissolved silicate concentration will decrease the ratios of N:Si and P:Si, which could influence phytoplankton species composition and favor the growth of diatoms over other groups of algae. Significant adverse effects in aquatic ecosystems are not expected.

Interaction of Nanostructured Calcium Silicate Hydrate with Ibuprofen Drug Molecules: X-ray Absorption Near Edge Structure (XANES) Study at the Ca, Si and O K-edge

NASA Astrophysics Data System (ADS)

Guo, X. X.; Sham, T. K.; Zhu, Y. J.; Hu, Y. F.

2013-04-01

Mesoporous calcium silicate hydrate (CSH) nanostructure has been proven to be bioactive and biocompatible, and has a bright future in the application of bone treatment among other applications. X-ray absorption near edge structure (XANES) is a powerful tool for the study of the interactions of calcium silicate hydrates with drug molecules because it is element specific and it probes the unoccupied electronic states. Herein, we report the use of the calcium, silicon and oxygen K-edge XANES spectroscopy to identify how drug molecules interact with different groups in calcium silicate hydrate mesoporous nano-carriers with different morphologies. Significant changes are observed in XANES spectra after drug loading into the calcium silicate hydrate system, especially at the Si and O K-edge. The implications of these findings are discussed.

Molybdenum Valence in Basaltic Silicate Melts: Effects of Temperature and Pressure

NASA Technical Reports Server (NTRS)

Danielson, L. R.; Righter, K.; Newville, M.; Sutton, S.; Choi, Y.; Pando, K.

2011-01-01

The metal-silicate partitioning behavior of molybdenum has been used as a test for equilibrium core formation hypotheses [for example, 1-6]. However, current models that apply experimental data to equilibrium core-mantle differentiation infer the oxidation state of molybdenum from solubility data or from multivariable coefficients from metal-silicate partitioning data [1,3,7]. Molybdenum, a multi-valent element with a valence transition near the fO2 of interest for core formation (approx.IW-2) will be sensitive to changes in fO2 of the system and silicate melt structure. In a silicate melt, Mo can occur in either 4+ or 6+ valence state, and Mo(6+) can be either octahedrally or tetrahedrally coordinated. Here we present X-ray absorption near edge structure (XANES) measurements of Mo valence in basaltic run products at a range of P, T, and fO2 and further quantify the valence transition of Mo.

Mid-infrared spectra of cometary dust: the evasion of its silicate mineralogy

NASA Astrophysics Data System (ADS)

Kimura, H.; Chigai, T.; Yamamoto, T.

2008-04-01

Infrared spectra of dust in cometary comae provide a way to identify its silicate constituents, and this is crucial for correctly understanding the condition under which our planetary system is formed. Recent studies assign a newly detected peak at a wavelength of 9.3 μm to pyroxenes and regard them as the most abundant silicate minerals in comets. Here we dispense with this pyroxene hypothesis to numerically reproduce the infrared features of cometary dust in the framework of our interstellar dust models. Presolar interstellar dust in a comet is modeled as fluffy aggregates consisting of submicrometer-sized organic grains with an amorphous-silicate core that undergoes nonthermal crystallization in a coma. We assert that forsterite (Mg2SiO4) is the carrier of all the observed features, including the 9.3 μm peak and that the major phase of iron is sulfides rather than iron-rich silicates.

Chemically bonded phospho-silicate ceramics

DOEpatents

Wagh, Arun S.; Jeong, Seung Y.; Lohan, Dirk; Elizabeth, Anne

2003-01-01

A chemically bonded phospho-silicate ceramic formed by chemically reacting a monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and a sparsely soluble oxide, with a sparsely soluble silicate in an aqueous solution. The monovalent alkali metal phosphate (or ammonium hydrogen phosphate) and sparsely soluble oxide are both in powder form and combined in a stochiometric molar ratio range of (0.5-1.5):1 to form a binder powder. Similarly, the sparsely soluble silicate is also in powder form and mixed with the binder powder to form a mixture. Water is added to the mixture to form a slurry. The water comprises 50% by weight of the powder mixture in said slurry. The slurry is allowed to harden. The resulting chemically bonded phospho-silicate ceramic exhibits high flexural strength, high compression strength, low porosity and permeability to water, has a definable and bio-compatible chemical composition, and is readily and easily colored to almost any desired shade or hue.

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

NASA Astrophysics Data System (ADS)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

NASA Astrophysics Data System (ADS)

Fujioka, Masaya; Shibuya, Taizo; Nakai, Junya; Yoshiyasu, Keigo; Sakai, Yuki; Takano, Yoshihiko; Kamihara, Yoichi; Matoba, Masanori

2014-12-01

The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows semiconducting-like behavior. In this study we have demonstrated that metallic behavior and a decrease in resistivity for Se-doped Co3SnInS2 occurs without suppression of the Seebeck coefficient. From the DFT calculations, when the selenium content is above 0.5, the total crystallographic energy shows that a higher indium occupancy at Sn2 site is more stable. Therefore, it is suggested that the selenium doping suppress the site preference for indium substitution. This is one of the possible explanations for the metallic conductivity observed in Se-doped Co3SnInS2

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

NASA Astrophysics Data System (ADS)

Liu, Po-Tsun; Tsai, T. M.; Chang, T. C.

2005-05-01

This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150°C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.

Impact on the earth, ocean and atmosphere

NASA Technical Reports Server (NTRS)

Ahrens, Thomas J.; O'Keefe, John D.

1987-01-01

On the basis of finite-difference techniques, cratering flow calculations are used to obtain the spatial attenuation of shock pressure with radius along the impact axis for the impact of silicate rock and iron impactors on a silicate half-space at speeds of 5 to 45 km/sec. Upon impact of a 10 to 30 km diameter silicate or water object onto a 5 km deep ocean overlying a silicate half-space planet at 30 km/sec, it is found that from 12 to 15 percent of the incident energy is coupled into the water. The mass of atmosphere lost due to impacts of 1 to 5 km radius projectiles is calculated.