Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces

PubMed Central

Grisolia, M.N.; Arora, A.; Valencia, S.; Varela, M.; Abrudan, R.; Weschke, E.; Schierle, E.; Rault, J.E.; Rueff, J.-P.; Barthélémy, A.; Santamaria, J.; Bibes, M.

2015-01-01

At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from strong Coulomb interactions between transition metal and oxygen ions. Such electronic correlations offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. Here we show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metal-oxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we probe charge reconstruction at interfaces with gadolinium titanate GdTiO3. X-ray absorption spectroscopy shows that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence. PMID:27158255

Hybridization-controlled charge transfer and induced magnetism at correlated oxide interfaces

NASA Astrophysics Data System (ADS)

Grisolia, M. N.; Varignon, J.; Sanchez-Santolino, G.; Arora, A.; Valencia, S.; Varela, M.; Abrudan, R.; Weschke, E.; Schierle, E.; Rault, J. E.; Rueff, J.-P.; Barthélémy, A.; Santamaria, J.; Bibes, M.

2016-05-01

At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from strong Coulomb interactions at and between transition metal and oxygen ions. Such electronic correlations offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. Here we show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metal-oxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we probe charge reconstruction at interfaces with gadolinium titanate GdTiO3. X-ray absorption spectroscopy shows that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate, exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence.

Numerical study of metal oxide hetero-junction solar cells with defects and interface states

NASA Astrophysics Data System (ADS)

Zhu, Le; Shao, Guosheng; Luo, J. K.

2013-05-01

Further to our previous work on ideal metal oxide (MO) hetero-junction solar cells, a systematic simulation has been carried out to investigate the effects of defects and interface states on the cells. Two structures of the window/absorber (WA) and window/absorber/voltage-enhancer (WAV) were modelled with defect concentration, defect energy level, interface state (ISt) density and ISt energy level as parameters. The simulation showed that the defects in the window layer and the voltage-enhancer layer have very limited effects on the performance of the cells, but those in the absorption layer have profound effects on the cell performance. The interface states at the W/A interface have a limited effect on the performance even for a density up to 1013 cm-2, while those at the A/V interface cause the solar cell to deteriorate severely even at a low density of lower than 1 × 1011 cm-2. It also showed that the back surface field (BSF) induced by band gap off-set in the WAV structure loses its function when defects with a modest concentration exist in the absorption layer and does not improve the open voltage at all.

Conformation changes in the Glutamate receptor as studied by LRET

NASA Astrophysics Data System (ADS)

Jayaraman, Vasanthi

2009-03-01

Glutamate receptors are the primary mediators of excitatory neurotransmission in the mammalian central nervous system. Glutamate binding to an extracellular ligand binding domain initiates a series of conformational changes that results in the formation of cation selective transmembrane ion channels that ultimately desensitize. We have used luminescence resonance energy transfer to determine the conformational changes that underlie the allosteric process of glutamate mediated gating in the receptor. These investigations showed that agonist binding induced cleft closure in the ligand binding domain confirming that this change observed in the isolated ligand binding domain of the receptor is one of the mechanisms by which agonist mediates activation. The LRET investigations also allowed a study of the conformational changes between the subunits. The apo state of the protein showed a dimer interface that was open. The dimer interface was brought together only in the activated state, suggesting that cleft closure drives the formation of the contacts at dimer interface, which in turn transiently stabilizes the open channel. At longer times, the stress induced by the transmembrane segments, ultimately drives the breakdown of the interface, leading to channel closure and receptor desensitization.

Effect of dielectric stoichiometry and interface chemical state on band alignment between tantalum oxide and platinum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lebedinskii, Yu. Yu.; National Research Nuclear University MEPhI; Chernikova, A. G.

2015-10-05

The tantalum oxide–platinum interface electronic properties determined by X-ray photoelectron spectroscopy are found to depend on the dielectric stoichiometry and platinum chemical state. We demonstrate the slow charging of the tantalum oxide in cases of Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces under the X-ray irradiation. This behavior is proposed to be related to the charge accumulation at oxygen vacancies induced traps. Based on the proposed methodology, we define the intrinsic conductive band offset (CBO) ∼1.3 eV (both for Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt) and CBO after the full saturation of the traps charging ∼0.5 eV, while the lastmore » one defines the energy position of charged traps below the bottom of conduction band. We demonstrate also the pining at the both Ta{sub 2}O{sub 5}/Pt and Ta{sub 2}O{sub 5−y}/Pt interfaces even in the “intrinsic” state, apparently induced by the presence of additional interfacial states. No shifts of Ta4f line and band alignment in over stoichiometric Ta{sub 2}O{sub 5+x}/Pt structure during X-ray irradiation, as well as the absence of pinning, resulting in increase of CBO up to 2.3 eV are found. This behavior is related to the PtO{sub 2} interfacing layer formation at Ta{sub 2}O{sub 5+x}/Pt, blocking the charging of the surface states and associated dipole formation.« less

Charge transfer induced by MoO3 at boron subphthalocyanine chloride/α-sexithiophene heterojunction interface

NASA Astrophysics Data System (ADS)

Foggiatto, Alexandre L.; Sakurai, Takeaki

2018-03-01

The energy-level alignment of boron subphthalocyanine chloride (SubPc)/α-sexithiophene (6T) grown on MoO3 was investigated using ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS). We demonstrated that the p-doping effect generated by the MoO3 layer can induce charge transfer at the organic-organic heterojunction interface. After the deposition of 6T on MoO3, the fermi level becomes pinned close to the 6T highest occupied molecular orbital (HOMO) level and when SubPc is deposited, owing to its tail states, charge transfer occurs in order to achieve thermodynamic equilibrium. We also demonstrated that the charge transfer can be reduced by annealing the film. We suggested that the reduction of the misalignment on the film induces a reduction in the density of gap states, which controls the charge transfer.

Quantum State-Resolved Collision Dynamics of Nitric Oxide at Ionic Liquid and Molten Metal Surfaces

NASA Astrophysics Data System (ADS)

Zutz, Amelia Marie

Detailed molecular scale interactions at the gas-liquid interface are explored with quantum state-to-state resolved scattering of a jet-cooled beam of NO(2pi1/2; N = 0) from ionic liquid and molten metal surfaces. The scattered distributions are probed via laser-induced fluorescence methods, which yield rotational and spin-orbit state populations that elucidate the dynamics of energy transfer at the gas-liquid interface. These collision dynamics are explored as a function of incident collision energy, surface temperature, scattering angle, and liquid identity, all of which are found to substantially affect the degree of rotational, electronic and vibrational excitation of NO via collisions at the liquid surface. Rotational distributions observed reveal two distinct scattering pathways, (i) molecules that trap, thermalize and eventually desorb from the surface (trapping-desorption, TD), and (ii) those that undergo prompt recoil (impulsive scattering, IS) prior to complete equilibration with the liquid surface. Thermally desorbing NO molecules are found to have rotational temperatures close to, but slightly cooler than the surface temperature, indicative of rotational dependent sticking probabilities on liquid surfaces. Nitric oxide is a radical with multiple low-lying electronic states that serves as an ideal candidate for exploring nonadiabatic state-changing collision dynamics at the gas-liquid interface, which induce significant excitation from ground (2pi1/2) to excited (2pi 3/2) spin-orbit states. Molecular beam scattering of supersonically cooled NO from hot molten metals (Ga and Au, Ts = 300 - 1400 K) is also explored, which provide preliminary evidence for vibrational excitation of NO mediated by thermally populated electron-hole pairs in the hot, conducting liquid metals. The results highlight the presence of electronically nonadiabatic effects and build toward a more complete characterization of energy transfer dynamics at gas-liquid interfaces.

Photoresponsive smart surface of LC azo-dendrimer: photomanipulation of topological structures and real-time imaging at a nano-scale

NASA Astrophysics Data System (ADS)

Araoka, Fumito; Eremin, Alexey; Aya, Satoshi; Lee, Guksik; Ito, Atsuki; Nadasi, Hajnalka; Sebastian, Nerea; Ishikawa, Ken; Haba, Osamu; Stannarius, Ralf; Yonetake, Koichiro; Takezoe, Hideo

2017-02-01

In this paper, we review some results on our recent studies on photo-induced phenomena of liquid crystals (LCs) by means of interfaces decorated with a photo-responsive azobenzene dendrimer (azo-dendrimer). The azo-dendrimer molecules doped in a LC are spontaneously segregated from bulk and adsorbed onto substrate/LC or solvent/LC interfaces, and their photo-isomerization can bring about the so-called anchoring transition, i.e. reversible switching between homeotropic and planar alignment states of the bulk LC, when exposed to UV/VIS light. In addition to photoinduced anchoring transition in a LC cell, several interesting photo-induced phenomena through the azo-dendrimerdecorated interfaces have been reported, such as photo-induced transformation of the interior topological structures of nematic, cholesteric and smectic droplets, photo-mechanical motion of the micro particles dispersed in a nematic matrix, and optical assistance of the athermal anchoring transition with the aid of a perfluoropolymer surface. In addition to such phenomena, we also discuss the conditions of such photo-responsive interfaces in terms of the polar anchoring energy at the interface upon photo-isomerization under illumination of UV and/or VIS lights. The anisotropy of the polar anchoring energy was evaluated experimentally by means of Polarization Microscopy (POM), Dielectric Spectroscopy (DS), Second Harmonic Generation (SHG), and Attenuated Total Reflection Fourier Transform Infrared (ATR-IR) Spectroscopy, and theoretically based on the simple Rapini-Papoular model. We also demonstrate the continuous bulk orientation change by the photo-dynamic process through the fine control of the polar anchoring energy. Besides, the state-of-the-art video-rate atomic force microscopy (ν-AFM) was carried out to visualize the dynamics of such interfaces at a nano-meter scale.

Interface induced ferromagnetism in topological insulator above room temperature

NASA Astrophysics Data System (ADS)

Tang, Chi; Chang, Cui-Zu; Liu, Yawen; Chen, Tingyong; Moodera, Jagadeesh; Shi, Jing

The quantum anomalous Hall effect (QAHE) observed in magnetic topological insulators (TI), an outcome of time reversal symmetry broken surface states, exhibits many exotic properties. However, a major obstacle towards high temperature QAHE is the low Curie temperature in the disordered magnetically doped TI systems. Here we report a study on heterostructures of TI and magnetic insulator in which the magnetic insulator, namely thulium iron garnet or TIG, has perpendicular magnetic anisotropy. At the TIG/TI interface, TIG magnetizes the surface states of the TI film by exchange coupling, as revealed by the anomalous Hall effect (AHE). We demonstrate that squared AHE hysteresis loops persist well above room temperature. The interface proximity induced high-temperature ferromagnetism in topological insulators opens up new possibilities for the realization of QAHE at high temperatures. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

DFT calculations of strain and interface effects on electronic structures and magnetic properties of L10-FePt/Ag heterojunction of GMR applications

NASA Astrophysics Data System (ADS)

Pramchu, Sittichain; Jaroenjittichai, Atchara Punya; Laosiritaworn, Yongyut

2018-03-01

In this work, density functional theory (DFT) was employed to investigate the effect of strain and interface on electronic structures and magnetic properties of L10-FePt/Ag heterojunction. Two possible interface structures of L10-FePt(001)/Ag(001), that is, interface between Fe and Ag layers (Fe/Ag) and between Pt and Ag layers (Pt/Ag), were inspected. It was found that Pt/Ag interface is more stable than Fe/Ag interface due to its lower formation energy. Further, under the lattice mismatch induced tensile strain, the enhancement of magnetism for both Fe/Ag and Pt/Ag interface structures has been found to have progressed, though the magnetic moments of "interfacial" Fe and Pt atoms have been found to have decreased. To explain this further, the local density of states (LDOS) analysis suggests that interaction between Fe (Pt) and Ag near Fe/Ag (Pt/Ag) interface leads to spin symmetry breaking of the Ag atom and hence induces magnetism magnitude. In contrast, the magnetic moments of interfacial Fe and Pt atoms reduce because of the increase in the electronic states near the Fermi level of the minority-spin electrons. In addition, the significant enhancements of the LDOS near the Fermi levels of the minority-spin electrons signify the boosting of the transport properties of the minority-spin electrons and hence the spin-dependent electron transport at this ferromagnet/metal interface. From this work, it is expected that this clarification of the interfacial magnetism may inspire new innovation on how to improve spin-dependent electron transport for enhancing the giant magnetoresistance (GMR) ratio of potential GMR-based spintronic devices.

Organic heterojunctions: Contact-induced molecular reorientation, interface states, and charge re-distribution

PubMed Central

Opitz, Andreas; Wilke, Andreas; Amsalem, Patrick; Oehzelt, Martin; Blum, Ralf-Peter; Rabe, Jürgen P.; Mizokuro, Toshiko; Hörmann, Ulrich; Hansson, Rickard; Moons, Ellen; Koch, Norbert

2016-01-01

We reveal the rather complex interplay of contact-induced re-orientation and interfacial electronic structure – in the presence of Fermi-level pinning – at prototypical molecular heterojunctions comprising copper phthalocyanine (H16CuPc) and its perfluorinated analogue (F16CuPc), by employing ultraviolet photoelectron and X-ray absorption spectroscopy. For both layer sequences, we find that Fermi-level (EF) pinning of the first layer on the conductive polymer substrate modifies the work function encountered by the second layer such that it also becomes EF-pinned, however, at the interface towards the first molecular layer. This results in a charge transfer accompanied by a sheet charge density at the organic/organic interface. While molecules in the bulk of the films exhibit upright orientation, contact formation at the heterojunction results in an interfacial bilayer with lying and co-facial orientation. This interfacial layer is not EF-pinned, but provides for an additional density of states at the interface that is not present in the bulk. With reliable knowledge of the organic heterojunction’s electronic structure we can explain the poor performance of these in photovoltaic cells as well as their valuable function as charge generation layer in electronic devices. PMID:26887445

Amplification of the electroosmotic velocity by induced charges at fluidic interfaces

NASA Astrophysics Data System (ADS)

Steffes, Clarissa; Baier, Tobias; Hardt, Steffen

2010-11-01

The performance of microfluidic devices like electroosmotic pumps is strongly limited by drag forces at the channel walls. In order to replace the standard no-slip condition at the wall with a more favorable slip condition, superhydrophobic surfaces are employed. In the Cassie-Baxter state, air is entrapped in the surface cavities, so that a significant fraction of water-air interfaces at which slip does occur is provided. However, such surfaces do not enhance electroosmotic flow. Since no net charge accumulates at the water-air interfaces, the driving force is reduced, and no flow enhancement is obtained. We consider electrodes incorporated in the superhydrophobic structure to induce charges at these interfaces, thereby increasing the driving force. A theoretical model is set up, yielding an understanding of the influence of the surface morphology on the flow, which serves as a basis for ongoing experimental work. While a considerable enhancement of the electroosmotic velocity is already expected for standard superhydrophobic surfaces, greater amplifications of one order of magnitude may be achieved by substituting the air in the surface cavities by oil, reducing the risk for electric breakdown or transition to the unfavorable Wenzel state.

Graphene-ferromagnet interfaces: hybridization, magnetization and charge transfer.

PubMed

Abtew, Tesfaye; Shih, Bi-Ching; Banerjee, Sarbajit; Zhang, Peihong

2013-03-07

Electronic and magnetic properties of graphene-ferromagnet interfaces are investigated using first-principles electronic structure methods in which a single layer graphene is adsorbed on Ni(111) and Co(111) surfaces. Due to the symmetry matching and orbital overlap, the hybridization between graphene pπ and Ni (or Co) d(z(2)) states is very strong. This pd hybridization, which is both spin and k dependent, greatly affects the electronic and magnetic properties of the interface, resulting in a significantly reduced (by about 20% for Ni and 10% for Co) local magnetic moment of the top ferromagnetic layer at the interface and an induced spin polarization on the graphene layer. The calculated induced magnetic moment on the graphene layer agrees well with a recent experiment. In addition, a substantial charge transfer across the graphene-ferromagnet interfaces is observed. We also investigate the effects of thickness of the ferromagnet slab on the calculated electronic and magnetic properties of the interface. The strength of the pd hybridization and the thickness-dependent interfacial properties may be exploited to design structures with desirable magnetic and transport properties for spintronic applications.

Nonlocal spin-confinement of electrons in graphene with proximity exchange interaction

NASA Astrophysics Data System (ADS)

Ang, Yee Sin; Liang, Shi-Jun; Ooi, Kelvin J. A.; Zhang, Chao; Ma, Zhongshui; Ang, Lay Kee

In graphene-magnetic-insulator hybrid structure such as graphene-Europium-oxide (EuO-G), proximity induced exchange interaction opens up a spin-dependent bandgap and spin splitting in the Dirac band. We study the bound state formation in a hetero-interface composed of EuO-G. We theoretically predict a remarkable nonlocal spin-confinement effect in EuO-G and show that spin-polarized quasi-1D electron interface state can be generated in a magnetic-field-free channel. Quasiparticle transport mediated by the interface state can be efficiently controlled by the channel width and electrostatic gating. Our results suggest a pathway to further reduce the dimensionality of graphene quasiparticles from 2D to 1D, thus offering an exciting graphene-based platform for the search of exotic 1D physics and spintronic applications.

Interfaces between strongly correlated oxides: controlling charge transfer and induced magnetism by hybridization

NASA Astrophysics Data System (ADS)

Bibes, Manuel

At interfaces between conventional materials, band bending and alignment are controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed valence has led to the discovery of novel two-dimensional states between simple band insulators such as LaAlO3 and SrTiO3. However, many oxides have a more complex electronic structure, with charge, orbital and/or spin orders arising from correlations between transition metal and oxygen ions. Strong correlations thus offer a rich playground to engineer functional interfaces but their compatibility with the classical band alignment picture remains an open question. In this talk we will show that beyond differences in electron affinities and polar effects, a key parameter determining charge transfer at correlated oxide interfaces is the energy required to alter the covalence of the metal-oxygen bond. Using the perovskite nickelate (RNiO3) family as a template, we have probed charge reconstruction at interfaces with gadolinium titanate GdTiO3 using soft X-ray absorption spectroscopy and hard X-ray photoemission spectroscopy. We show that the charge transfer is thwarted by hybridization effects tuned by the rare-earth (R) size. Charge transfer results in an induced ferromagnetic-like state in the nickelate (observed by XMCD), exemplifying the potential of correlated interfaces to design novel phases. Further, our work clarifies strategies to engineer two-dimensional systems through the control of both doping and covalence. Work supported by ERC CoG MINT #615759.

Protons at the speed of sound: Predicting specific biological signaling from physics.

PubMed

Fichtl, Bernhard; Shrivastava, Shamit; Schneider, Matthias F

2016-05-24

Local changes in pH are known to significantly alter the state and activity of proteins and enzymes. pH variations induced by pulses propagating along soft interfaces (e.g. membranes) would therefore constitute an important pillar towards a physical mechanism of biological signaling. Here we investigate the pH-induced physical perturbation of a lipid interface and the physicochemical nature of the subsequent acoustic propagation. Pulses are stimulated by local acidification and propagate - in analogy to sound - at velocities controlled by the interface's compressibility. With transient local pH changes of 0.6 directly observed at the interface and velocities up to 1.4 m/s this represents hitherto the fastest protonic communication observed. Furthermore simultaneously propagating mechanical and electrical changes in the lipid interface are detected, exposing the thermodynamic nature of these pulses. Finally, these pulses are excitable only beyond a threshold for protonation, determined by the pKa of the lipid head groups. This protonation-transition plus the existence of an enzymatic pH-optimum offer a physical basis for intra- and intercellular signaling via sound waves at interfaces, where not molecular structure and mechano-enyzmatic couplings, but interface thermodynamics and thermodynamic transitions are the origin of the observations.

A concise way to estimate the average density of interface states in an ITO-SiOx/n-Si heterojunction solar cell

NASA Astrophysics Data System (ADS)

Li, Y.; Han, B. C.; Gao, M.; Wan, Y. Z.; Yang, J.; Du, H. W.; Ma, Z. Q.

2017-09-01

On the basis of a photon-assisted high frequency capacitance-voltage (C-V) method (1 MHz C-V), an effective approach is developed to evaluate the average interface state density (Dit) of an ITO-SiOx/n-Si heterojunction structure. Tin-doped indium oxide (ITO) films with different thicknesses were directly deposited on (100) n-type crystalline silicon by magnetron sputtering to fabricate semiconductor-insulator-semiconductor (SIS) hetero-interface regions where an ultra-thin SiOx passivation layer was naturally created. The morphology of the SiOx layer was confirmed by X-ray photoelectron spectroscopy depth profiling and transmission electron microscope analysis. The thinness of this SiOx layer was the main reason for the SIS interface state density being more difficult to detect than that of a typical metal-oxide-semiconductor structure. A light was used for photon injection while measuring the C-V of the device, thus enabling the photon-assisted C-V measurement of the Dit. By quantifying decreases of the light-induced-voltage as a variation of the capacitance caused by parasitic charge at interface states the passivation quality within the interface of ITO-SiOx/n-Si could be reasonably evaluated. The average interface state density of these SIS devices was measured as 1.2-1.7 × 1011 eV-1 cm-2 and declined as the passivation layer was made thicker. The lifetime of the minority carriers, dark leakage current, and the other photovoltaic parameters of the devices were also used to determine the passivation.

Affective Pacman: A Frustrating Game for Brain-Computer Interface Experiments

NASA Astrophysics Data System (ADS)

Reuderink, Boris; Nijholt, Anton; Poel, Mannes

We present the design and development of Affective Pacman, a game that induces frustration to study the effect of user state changes on the EEG signal. Affective Pacman is designed to induce frustration for short periods, and allows the synchronous recording of a wide range of sensors, such as physiological sensors and EEG in addition to the game state. A self-assessment is integrated in the game to track changes in user state. Preliminary results indicate a significant effect of the frustration induction on the EEG.

Origin of photovoltaic effect in superconducting YBa2Cu3O6.96 ceramics

PubMed Central

Yang, F.; Han, M. Y.; Chang, F. G.

2015-01-01

We report remarkable photovoltaic effect in YBa2Cu3O6.96 (YBCO) ceramic between 50 and 300 K induced by blue-laser illumination, which is directly related to the superconductivity of YBCO and the YBCO-metallic electrode interface. There is a polarity reversal for the open circuit voltage Voc and short circuit current Isc when YBCO undergoes a transition from superconducting to resistive state. We show that there exists an electrical potential across the superconductor-normal metal interface, which provides the separation force for the photo-induced electron-hole pairs. This interface potential directs from YBCO to the metal electrode when YBCO is superconducting and switches to the opposite direction when YBCO becomes nonsuperconducting. The origin of the potential may be readily associated with the proximity effect at metal-superconductor interface when YBCO is superconducting and its value is estimated to be ~10–8 mV at 50 K with a laser intensity of 502 mW/cm2. Combination of a p-type material YBCO at normal state with an n-type material Ag-paste forms a quasi-pn junction which is responsible for the photovoltaic behavior of YBCO ceramics at high temperatures. Our findings may pave the way to new applications of photon-electronic devices and shed further light on the proximity effect at the superconductor-metal interface. PMID:26099727

Current-induced depairing in the Bi2Te3/FeTe interfacial superconductor

NASA Astrophysics Data System (ADS)

Kunchur, M. N.; Dean, C. L.; Moghadam, N. Shayesteh; Knight, J. M.; He, Q. L.; Liu, H.; Wang, J.; Lortz, R.; Sou, I. K.; Gurevich, A.

2015-09-01

We investigated current induced depairing in the Bi2Te3 /FeTe topological insulator-chalcogenide interface superconductor. The measured depairing current density provides information on the magnetic penetration depth and superfluid density, which in turn shed light on the nature of the normal state that underlies the interfacial superconductivity.

Local Peltier-effect-induced reversible metal–insulator transition in VO{sub 2} nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takami, Hidefumi; Kanki, Teruo, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp; Tanaka, Hidekazu, E-mail: kanki@sanken.osaka-u.ac.jp, E-mail: h-tanaka@sanken.osaka-u.ac.jp

2016-06-15

We report anomalous resistance leaps and drops in VO{sub 2} nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO{sub 2} nanowires because one straight current path through the electronicmore » domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.« less

Crystal orientation induced spin Rabi beat oscillations of point defects at the c-Si(111)/ SiO 2 interface

NASA Astrophysics Data System (ADS)

Paik, Seoyoung; Lee, Sang-Yun; Boehme, Christoph

2011-03-01

Spin-dependent electronic transitions such as certain charge carrier recombination and transport processes in semiconductors are usually governed by the Pauli blockade within pairs of two paramagnetic centers. One implication of this is that the manipulation of spin states, e.g. by magnetic resonant excitation, can produce changes to electric currents of the given semiconductor material. If both spins are changed at the same time, quantum beat effects such as beat oscillation between resonantly induced spin Rabi nutation becomes detectable through current measurements. Here, we report on electrically detected spin Rabi beat oscillation caused by pairs of 31 P donor states and Pb interface defects at the phosphorous doped Si(111)/ Si O2 interface. Due to the g-factor anisotropy of the Pb center we can tune the intra pair Larmor frequency difference (so called Larmor separation) through orientation of the sample with regard to the external magnetic field. As the Larmor separation governs the spin Rabi beat oscillation, we show experimentally how the crystal orientation can influence the beat effect.

Chemistry of MOS-LSI radiation hardening

NASA Technical Reports Server (NTRS)

Grunthaner, P.

1985-01-01

The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance

NASA Astrophysics Data System (ADS)

Paik, Seoyoung

A study of spin-dependent electronic transitions at the (111) oriented phosphorous doped crystalline silicon (c-Si) to silicon dioxide (SiO 2) interface is presented for [31P] = 1015 cm-3 and [31P] = 1016 cm -3 and a temperature range between T ≈ 5K and T ≈ 15K. Using pulsed electrically detected magnetic resonance (pEDMR), spin-dependent transitions involving 31P donor states and two different interface states are observed, namely (i) Pb centers which can be identified by their characteristic anisotropy and (ii) the E' center which is attributed to defects of the near interface SiO 2 bulk. Correlation measurements of the dynamics of spin-dependent recombination confirm that previously proposed transitions between 31P and the interface defects take place. The influence of these near interface transitions on the 31P donor spin coherence time T 2 as well as the donor spin-lattice relaxation time T 1 is then investigated by comparison of spin Hahn echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR measurements, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that the T2 times of both interface states and 31P donor electrons spins in proximity of them are consistently shorter than the T1 times, and both T2 and T1 times of the near interface donors are reduced by several orders of magnitude from those in the bulk, at T ≤ 13 K. The T 2 times of the 31P donor electrons are in agreement with the prediction by De Sousa that they are limited by interface defect-induced field noise. To further investigate the dynamic properties of spin-dependent near interface processes, electrical detection of spin beat oscillation between resonantly induced spin-Rabi nutation is conducted at the phosphorous doped (1016cm-3) Si(111)/SiO2 interface. Predictions of Rabi beat oscillations based on several different spin-pair models are compared with measured Rabi beat nutation data. Due to the g-factor anisotropy of the Pb center (a silicon surface dangling bond), one can tune intra-pair Larmor frequency differences (Larmor separations) by orientation of the crystal with regard to an external magnetic field. Since Larmor separation governs the number of beating spin-pairs, crystal orientation can control the beat current. This is used to identify spin states that are paired by mutual electronic transitions. Based on the agreement between hypothesis and data, the experiments confirm the presence of the previously observed 31P-P b transition and the previously hypothesized P b to near interface SiO2 bulk state (E' center) transition.

Electric Field Induce Blue Shift and Intensity Enhancement in 2D Exciplex Organic Light Emitting Diodes; Controlling Electron-Hole Separation.

PubMed

Al Attar, Hameed A; Monkman, Andy P

2016-09-01

A simple but novel method is designed to study the characteristics of the exciplex state pinned at a donor-acceptor abrupt interface and the effect an external electric field has on these excited states. The reverse Onsager process, where the field induces blue-shifted emission and increases the efficiency of the exciplex emission as the e-h separation reduces, is discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantum computing with acceptor spins in silicon.

PubMed

Salfi, Joe; Tong, Mengyang; Rogge, Sven; Culcer, Dimitrie

2016-06-17

The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently (arXiv:1508.04259), here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time [Formula: see text] as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

NASA Astrophysics Data System (ADS)

Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

2017-04-01

The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

Origin of the energy level alignment at organic/organic interfaces: The role of structural defects

NASA Astrophysics Data System (ADS)

Bussolotti, Fabio; Yang, Jinpeng; Hinderhofer, Alexander; Huang, Yuli; Chen, Wei; Kera, Satoshi; Wee, Andrew T. S.; Ueno, Nobuo

2014-03-01

In this paper, the electronic properties of as-deposited and N2-exposedCuPc/F16CuPc interface, a prototype system for organic photovoltaic applications, are investigated by using ultralow background, high-sensitivity photoemission spectroscopy. It is found that (i) N2 exposure significantly modifies the energy level alignment (ELA) at the interface between CuPc and F16CuPc layer and (ii) the direction of the N2-induced energy level shift of the CuPc depends on the position of the Fermi level (EF) in the CuPc highest occupied molecular orbital-lowest unoccupied molecular orbital gap of the as-deposited film. These observations are related to the changes in the density of gap states (DOGS) produced by structural imperfections in the molecular packing geometry, as introduced by the N2 penetration into the CuPc layer. This result demonstrates the key role of structure-induced DOGS in controlling the ELA at organic/organic interfaces.

Persistent ferromagnetism and topological phase transition at the interface of a superconductor and a topological insulator.

PubMed

Qin, Wei; Zhang, Zhenyu

2014-12-31

At the interface of an s-wave superconductor and a three-dimensional topological insulator, Majorana zero modes and Majorana helical states have been proposed to exist respectively around magnetic vortices and geometrical edges. Here we first show that randomly distributed magnetic impurities at such an interface will induce bound states that broaden into impurity bands inside (but near the edges of) the superconducting gap, which remains open unless the impurity concentration is too high. Next we find that an increase in the superconducting gap suppresses both the oscillation magnitude and the period of the Ruderman-Kittel-Kasuya-Yosida interaction between two magnetic impurities. Within a mean-field approximation, the ferromagnetic Curie temperature is found to be essentially independent of the superconducting gap, an intriguing phenomenon due to a compensation effect between the short-range ferromagnetic and long-range antiferromagnetic interactions. The existence of robust superconductivity and persistent ferromagnetism at the interface allows realization of a novel topological phase transition from a nonchiral to a chiral superconducting state at sufficiently low temperatures, providing a new platform for topological quantum computation.

Vacuum-induced quantum memory in an opto-electromechanical system

NASA Astrophysics Data System (ADS)

Qin, Li-Guo; Wang, Zhong-Yang; Wu, Shi-Chao; Gong, Shang-Qing; Ma, Hong-Yang; Jing, Jun

2018-03-01

We propose a scheme to implement electrically controlled quantum memory based on vacuum-induced transparency (VIT) in a high-Q tunable cavity, which is capacitively coupled to a mechanically variable capacitor by a charged mechanical cavity mirror as an interface. We analyze the changes of the cavity photons arising from vacuum-induced-Raman process and discuss VIT in an atomic ensemble trapped in the cavity. By slowly adjusting the voltage on the capacitor, the VIT can be adiabatically switched on or off, meanwhile, the transfer between the probe photon state and the atomic spin state can be electrically and adiabatically modulated. Therefore, we demonstrate a vacuum-induced quantum memory by electrically manipulating the mechanical mirror of the cavity based on electromagnetically induced transparency mechanism.

Two-dimensional spinodal interface in one-step grown graphene-molybdenum carbide heterostructures

NASA Astrophysics Data System (ADS)

Qiao, Jia-Bin; Gong, Yue; Liu, Haiwen; Shi, Jin-An; Gu, Lin; He, Lin

2018-05-01

Heterostructures made by stacking different materials on top of each other are expected to exhibit unusual properties and new phenomena. Interface of the heterostructures plays a vital role in determining their properties. Here, we report the observation of a two-dimensional (2D) spinodal interface in graphene-molybdenum carbide (α -M o2C ) heterostructures, which arises from spinodal decomposition occurring at the heterointerface, by using scanning tunneling microscopy. Our experiment demonstrates that the 2D spinodal interface modulates graphene into whispering gallery resonant networks filled with quasibound states of massless Dirac fermions. Moreover, below the superconducting transition temperature of the underlying α -M o2C , the 2D spinodal interface behaves as disorders, resulting in the breakdown of the proximity-induced superconductivity in graphene. Our result sheds light on tuning properties of heterostructures based on interface engineering.

Colloidal Particle Adsorption at Water-Water Interfaces with Ultralow Interfacial Tension

NASA Astrophysics Data System (ADS)

Keal, Louis; Colosqui, Carlos E.; Tromp, R. Hans; Monteux, Cécile

2018-05-01

Using fluorescence confocal microscopy we study the adsorption of single latex microparticles at a water-water interface between demixing aqueous solutions of polymers, generally known as a water-in-water emulsion. Similar microparticles at the interface between molecular liquids have exhibited an extremely slow relaxation preventing the observation of expected equilibrium states. This phenomenon has been attributed to "long-lived" metastable states caused by significant energy barriers Δ F ˜γ Ad≫kBT induced by high interfacial tension (γ ˜10-2 N /m ) and nanoscale surface defects with characteristic areas Ad≃10 - 30 nm2 . For the studied water-water interface with ultralow surface tension (γ ˜10-4 N /m ) we are able to characterize the entire adsorption process and observe equilibrium states prescribed by a single equilibrium contact angle independent of the particle size. Notably, we observe crossovers from fast initial dynamics to slower kinetic regimes analytically predicted for large surface defects (Ad≃500 nm2). Moreover, particle trajectories reveal a position-independent damping coefficient that is unexpected given the large viscosity contrast between phases. These observations are attributed to the remarkably diffuse nature of the water-water interface and the adsorption and entanglement of polymer chains in the semidilute solutions. This work offers some first insights on the adsorption dynamics or kinetics of microparticles at water-water interfaces in biocolloidal systems.

Flow-induced 2D protein crystallization: characterization of the coupled interfacial and bulk flows.

PubMed

Young, James E; Posada, David; Lopez, Juan M; Hirsa, Amir H

2015-05-14

Two-dimensional crystallization of the protein streptavidin, crystallizing below a biotinylated lipid film spread on a quiescent air-water interface is a well studied phenomenon. More recently, 2D crystallization induced by a shearing interfacial flow has been observed at film surface pressures significantly lower than those required in a quiescent system. Here, we quantify the interfacial and bulk flow associated with 2D protein crystallization through numerical modeling of the flow along with a Newtonian surface model. Experiments were conducted over a wide range of conditions resulting in a state diagram delineating the flow strength required to induce crystals for various surface pressures. Through measurements of the velocity profile at the air-water interface, we found that even in the cases where crystals are formed, the macroscopic flow at the interface is well described by the Newtonian model. However, the results show that even in the absence of any protein in the system, the viscous response of the biotinylated lipid film is complicated and strongly dependent on the strength of the flow. This observation suggests that the insoluble lipid film plays a key role in flow-induced 2D protein crystallization.

Water promotes the sealing of nanoscale packing defects in folding proteins.

PubMed

Fernández, Ariel

2014-05-21

A net dipole moment is shown to arise from a non-Debye component of water polarization created by nanoscale packing defects on the protein surface. Accordingly, the protein electrostatic field exerts a torque on the induced dipole, locally impeding the nucleation of ice at the protein-water interface. We evaluate the solvent orientation steering (SOS) as the reversible work needed to align the induced dipoles with the Debye electrostatic field and computed the SOS for the variable interface of a folding protein. The minimization of the SOS is shown to drive protein folding as evidenced by the entrainment of the total free energy by the SOS energy along trajectories that approach a Debye limit state where no torque arises. This result suggests that the minimization of anomalous water polarization at the interface promotes the sealing of packing defects, thereby maintaining structural integrity and committing the protein chain to fold.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Photoinduced surface plasmon switching at VO2/Au interface.

PubMed

Kumar, Nardeep; Rúa, Armando; Aldama, Jennifer; Echeverría, Karla; Fernández, Félix E; Lysenko, Sergiy

2018-05-28

Angle-resolved reflection, light scattering and ultrafast pump-probe spectroscopy combined with a surface plasmon-polariton (SPP) resonance technique in attenuated total reflection geometry was used to investigate the light-induced plasmonic switching in a photorefractive VO 2 /Au hybrid structure. Measurements of SPP scattering and reflection shows that the optically-induced formation of metallic state in a vanadium dioxide layer deposited on a gold film significantly alters the electromagnetic field enhancement and SPP propagation length at the VO 2 /Au interface. The ultrafast optical manipulation of SPP resonance is shown on a picosecond timescale. Obtained results demonstrate high potential of photorefractive vanadium oxides as efficient plasmonic modulating materials for ultrafast optoelectronic devices.

Metal-induced gap states in ferroelectric capacitors and its relationship with complex band structures

NASA Astrophysics Data System (ADS)

Junquera, Javier; Aguado-Puente, Pablo

2013-03-01

At metal-isulator interfaces, the metallic wave functions with an energy eigenvalue within the band gap decay exponentially inside the dielectric (metal-induced gap states, MIGS). These MIGS can be actually regarded as Bloch functions with an associated complex wave vector. Usually only real values of the wave vectors are discussed in text books, since infinite periodicity is assumed and, in that situation, wave functions growing exponentially in any direction would not be physically valid. However, localized wave functions with an exponential decay are indeed perfectly valid solution of the Schrodinger equation in the presence of defects, surfaces or interfaces. For this reason, properties of MIGS have been typically discussed in terms of the complex band structure of bulk materials. The probable dependence on the interface particulars has been rarely taken into account explicitly due to the difficulties to include them into the model or simulations. We aim to characterize from first-principles simulations the MIGS in realistic ferroelectric capacitors and their connection with the complex band structure of the ferroelectric material. We emphasize the influence of the real interface beyond the complex band structure of bulk materials. Financial support provided by MICINN Grant FIS2009-12721-C04-02, and by the European Union Grant No. CP-FP 228989-2 ``OxIDes''. Computer resources provided by the RES.

Robustness of Topological Superconductivity in Solid State Hybrid Structures

NASA Astrophysics Data System (ADS)

Sitthison, Piyapong

The non-Abelian statistics of Majorana fermions (MFs) makes them an ideal platform for implementing topological quantum computation. In addition to the fascinating fundamental physics underlying the emergence of MFs, this potential for applications makes the study of these quasiparticles an extremely popular subject in condensed matter physics. The commonly called `Majorana fermions' are zero-energy bound states that emerge near boundaries and defects in topological superconducting phases, which can be engineered, for example, by proximity coupling strong spin-orbit coupling semiconductor nanowires and ordinary s-wave superconductors. The stability of these bound states is determined by the stability of the underlying topological superconducting phase. Hence, understanding their stability (which is critical for quantum computation), involves studying the robustness of the engineered topological superconductors. This work addresses this important problem in the context of two types of hybrid structures that have been proposed for realizing topological superconductivity: topological insulator - superconductor (TI-SC) and semiconductor - superconductor (SM-SC) nanostructures. In both structures, electrostatic effects due to applied external potentials and interface-induced potentials are significant. This work focuses on developing a theoretical framework for understanding these effects, to facilitate the optimization of the nanostructures studied in the laboratory. The approach presented in this thesis is based on describing the low-energy physics of the hybrid structure using effective tight-binding models that explicitly incorporate the proximity effects emerging at interfaces. Generically, as a result of the proximity coupling to the superconductor, an induced gap emerges in the semiconductor (topological insulator) sub-system. The strength of the proximity-induced gap is determined by the transparency of the interface and by the amplitude of the low- energy SM (TI) states at the interface. In turn, this amplitude is strongly impacted by electrostatic effects. In addition, these effects control the value of the chemical potential in the nanowire (nanoribbon), as well as the strength of the Rashba-type spin-orbit coupling - two key parameters that determine the stability of the topological superconducting phase. To account for these critical effects, a numerically efficient Poisson-Schrodinger scheme is developed.

Spin-polarized two-dimensional t2 g electron gas: Ab initio study of EuO interface with oxygen-deficient SrTi O3

NASA Astrophysics Data System (ADS)

Gao, Lingyuan; Demkov, Alexander A.

2018-03-01

Using first-principles calculations we predict the existence of a spin-polarized two-dimensional electron gas (2DEG) at the interface of a ferromagnetic insulator EuO and oxygen-deficient SrTi O3 . The carriers are generated by oxygen vacancies in SrTi O3 near the interface and have predominantly Ti-t2 g orbital character. At the interface, the split-off dx y-derived conduction band of SrTi O3 is fully spin-polarized and the in-gap vacancy-induced state, found below the conduction-band edge, is aligned ferromagnetically with EuO. The calculations suggest a possible mechanism for generating spin-polarized 2DEG for spintronic applications.

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

PubMed

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

NASA Astrophysics Data System (ADS)

Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

2017-08-01

Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

Mapping atomic contact between pentacene and a Au surface using scanning tunneling spectroscopy.

PubMed

Song, Young Jae; Lee, Kyuho; Kim, Seong Heon; Choi, Byoung-Young; Yu, Jaejun; Kuk, Young

2010-03-10

We mapped spatially varying intramolecular electronic structures on a pentacene-gold interface using scanning tunneling spectroscopy. Along with ab initio calculations based on density functional theory, we found that the directional nature of the d orbitals of Au atoms plays an important role in the interaction at the pentacene-gold contact. The gold-induced interface states are broadened and shifted by various pentacene-gold distances determined by the various registries of a pentacene molecule on a gold substrate.

Emergence of Metallic Properties at LiFePO4 Surfaces and LiFePO4/Li2S Interfaces: An Ab Initio Study.

PubMed

Timoshevskii, Vladimir; Feng, Zimin; Bevan, Kirk H; Zaghib, Karim

2015-08-26

The atomic and electronic structures of the LiFePO4 (LFP) surface, both bare and reconstructed upon possible oxygenation, are theoretically studied by ab initio methods. On the basis of total energy calculations, the atomic structure of the oxygenated surface is proposed, and the effect of surface reconstruction on the electronic properties of the surface is clarified. While bare LFP(010) surface is insulating, adsorption of oxygen leads to the emergence of semimetallic behavior by inducing the conducting states in the band gap of the system. The physical origin of these conducting states is investigated. We further demonstrate that deposition of Li2S layers on top of oxygenated LFP(010) surface leads to the formation of additional conducting hole states in the first layer of Li2S surface because of the charge transfer from sulfur p-states to the gap states of LFP surface. This demonstrates that oxygenated LFP surface not only provides conducting layers itself, but also induces conducting channels in the top layer of Li2S. These results help to achieve further understanding of potential role of LFP particles in improving the performance of Li-S batteries through emergent interface conductivity.

Pressure-induced reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure

NASA Astrophysics Data System (ADS)

Shen, Junying; Heuckeroth, Claire; Deng, Yuhang; He, Qinglin; Liu, Hong Chao; Liang, Jing; Wang, Jiannong; Sou, Iam Keong; Schilling, James S.; Lortz, Rolf

2017-12-01

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron-based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We interpret our data in the context of a pressure-induced enhanced coupling of the Fe1+yTe interfacial layer with the Bi2Te3 surface state, which modifies the electronic properties of the interface layer in a way that superconductivity emerges and becomes further enhanced under pressure. This demonstrates the important role of the TI in the interfacial superconducting mechanism.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Technical Reports Server (NTRS)

Jones, C. W. (Editor)

1985-01-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Astrophysics Data System (ADS)

Jones, C. W.

1985-12-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Temperature Dependence and Energetics of Single Ions at the Aqueous Liquid-Vapor Interface

PubMed Central

Ou, Shuching; Patel, Sandeep

2014-01-01

We investigate temperature-dependence of free energetics with two single halide anions, I− and Cl−, crossing the aqueous liquid-vapor interface through molecular dynamics simulations. The result shows that I− has a modest surface stability of 0.5 kcal/mol at 300 K and the stability decreases as the temperature increases, indicating the surface adsorption process for the anion is entropically disfavored. In contrast, Cl− shows no such surface state at all temperatures. Decomposition of free energetics reveals that water-water interactions provide a favorable enthalpic contribution, while the desolvation of ion induces an increase in free energy. Calculations of surface fluctuations demonstrate that I− generates significantly greater interfacial fluctuations compared to Cl−. The fluctuation is attributed to the malleability of the solvation shells, which allows for more long-ranged perturbations and solvent density redistribution induced by I− as the anion approaches the liquid-vapor interface. The increase in temperature of the solvent enhances the inherent thermally-excited fluctuations and consequently reduces the relative contribution from anion to surface fluctuations, which is consistent with the decrease in surface-stability of I−. Our results indicate a strong correlation with induced interfacial fluctuations and anion surface stability; moreover, resulting temperature dependent behavior of induced fluctuations suggests the possibility of a critical level of induced fluctuations associated with surface stability. PMID:23537166

Photoelectron spectroscopy study of the electronic structures at CoPc/Bi(111) interface

NASA Astrophysics Data System (ADS)

Sun, Haoliang; Liang, Zhaofeng; Shen, Kongchao; Hu, Jinbang; Ji, Gengwu; Li, Zheshen; Li, Haiyang; Zhu, Zhiyuan; Li, Jiong; Gao, Xingyu; Han, Huang; Jiang, Zheng; Song, Fei

2017-07-01

Self-assembly of functional molecules on solid substrate has been recognized as an appealing approach for the fabrication of diverse nanostructures for nanoelectronics. Herein, we investigate the growth of cobalt phthalocyanine (CoPc) on a Bi(111) surface with focus on the interface electronic structures utilizing photoelectron spectroscopy. While charge transfer from bismuth substrate to the molecule results in the emergence of an interface component in the Co 3p core level at lower binding energy, core-levels associated to the molecular ligand (C 1s and N 1s) are less influenced by the adsorption. In addition, density functional theory (DFT) calculations also support the empirical inference that the molecule-substrate interaction mainly involves the out-of-plane empty Co 3d orbital and bismuth states. Finally, valence band spectra demonstrate the molecule-substrate interaction is induced by interface charge transfer, agreeing well with core level measurements. Charge transfer is shown to be mainly from the underlying bismuth substrate to the empty states located at the central Co atom in the CoPc molecules. This report may provide a fundamental basis to the on-surface engineering of interfaces for molecular devices and spintronics.

Design principle for efficient charge separation at the donor-acceptor interface for high performance organic solar cell device

NASA Astrophysics Data System (ADS)

Nie, Wanyi; Gupta, Gautam; Crone, Brian; Wang, Hsing-Lin; Mohite, Aditya; MPA-11 Material synthesis and integrated device Team; MPA-chemistry Team

2014-03-01

The performance of donor (D) /acceptor (A) structure based organic electronic devices, such as solar cell, light emitting devices etc., relays on the charge transfer process at the interface dramatically. In organic solar cell, the photo-induced electron-hole pair is tightly bonded and will form a charge transfer (CT) state at the D/A interface after dissociation. There is a large chance for them to recombine through CT state and thus is a major loss that limit the overall performance. Here, we report three different strategies that allow us to completely suppress the exciplex (or charge transfer state) recombination between any D/A system. We observe that the photocurrent increases by 300% and the power conversion efficiency increases by 4-5 times simply by inserting a spacer layer in the form of an a) insulator b) Oliogomer or using a c) heavy atom at the donor-acceptor interface in a P3HT/C60 bilayer device. By using those different functional mono layers, we successfully suppressed the exciplex recombination in evidence of increased photocurrent and open circuit voltage. Moreover, these strategies are applicable universally to any donor-acceptor interface. And we demonstrated such strategies in a bulk-heterojunction device which improved the power conversion efficiency from 3.5% up to 4.6%.

Proteins at the air-water interface in a lattice model

NASA Astrophysics Data System (ADS)

Zhao, Yani; Cieplak, Marek

2018-03-01

We construct a lattice protein version of the hydrophobic-polar model to study the effects of the air-water interface on the protein and on an interfacial layer formed through aggregation of many proteins. The basic unit of the model is a 14-mer that is known to have a unique ground state in three dimensions. The equilibrium and kinetic properties of the systems with and without the interface are studied through a Monte Carlo process. We find that the proteins at high dilution can be pinned and depinned many times from the air-water interface. When pinned, the proteins undergo deformation. The staying time depends on the strength of the coupling to the interface. For dense protein systems, we observe glassy effects. Thus, the lattice model yields results which are similar to those obtained through molecular dynamics in off-lattice models. In addition, we study dynamical effects induced by local temperature gradients in protein films.

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

PubMed

Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

2003-12-31

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

NASA Astrophysics Data System (ADS)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

2014-07-01

The density of traps at semiconductor-insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 1012 cm-2, and the hole mobility was up to 6.5 cm2 V-1 s-1 after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Influence of peak oral temperatures on veneer–core interface stress state

PubMed Central

Marrelli, Massimo; Pujia, Antonella; Apicella, Davide; Sansalone, Salvatore; Tatullo, Marco

2015-01-01

Abstract Objective: There is a growing interest for the use of Y-TZP zirconia as core material in veneered all-ceramic prostheses. The objective of this study was to evaluate the influence of CET on the stress distribution of a porcelain layered to zirconia core single crowns by finite elements analysis. Material and methods: CET of eight different porcelains was considered during the analysis. Results: Results of this study indicated that the mismatch in CET between the veneering porcelain and the Y-TZP zirconia core has to be minimum (0.5–1 μm/mK) so as to decrease the growing of residual stresses which could bring chipping. Conclusions: The stress state due to temperature variation should be carefully taken into consideration while studying the effect of mechanical load on zirconia core crown by FEA. The interfacial stress state can be increased by temperature variation up to 20% with respect to the relative failure parameter (interface strength in this case). This means that stress due to mechanical load combined to temperature variation-induced stress can lead porcelain veneer–zirconia core interfaces to failure. PMID:28642897

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

NASA Astrophysics Data System (ADS)

Hsu, Sheng-Chia; Li, Yiming

2014-11-01

In this work, we study the impact of random interface traps (RITs) at the interface of SiO x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of RIT density of state ( D it). The variability of the off-state current ( I off) and drain-induced barrier lowering (DIBL) will be severely affected by RITs with high D it varying from 5 × 1012 to 5 × 1013 eV-1 cm-2 owing to significant threshold voltage ( V th) fluctuation. The results of this study indicate that if the level of D it is lower than 1 × 1012 eV-1 cm-2, the normalized variability of the on-state current, I off, V th, DIBL, and subthreshold swing is within 5%.

Measurement of Conformational Changes Accompanying Desensitization in an Ionotropic Glutamate Receptor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armstrong,N.; Jasti, J.; Beich-Frandsen, M.

2006-01-01

The canonical conformational states occupied by most ligand-gated ion channels, and many cell-surface receptors, are the resting, activated, and desensitized states. While the resting and activated states of multiple receptors are well characterized, elaboration of the structural properties of the desensitized state, a state that is by definition inactive, has proven difficult. Here we use electrical, chemical, and crystallographic experiments on the AMPA-sensitive GluR2 receptor, defining the conformational rearrangements of the agonist binding cores that occur upon desensitization of this ligand-gated ion channel. These studies demonstrate that desensitization involves the rupture of an extensive interface between domain 1 of 2-foldmore » related glutamate-binding core subunits, compensating for the ca. 21{sup o} of domain closure induced by glutamate binding. The rupture of the domain 1 interface allows the ion channel to close and thereby provides a simple explanation to the long-standing question of how agonist binding is decoupled from ion channel gating upon receptor desensitization.« less

A numerical method for electro-kinetic flow with deformable fluid interfaces

NASA Astrophysics Data System (ADS)

Booty, Michael; Ma, Manman; Siegel, Michael

2013-11-01

We consider two-phase flow of ionic fluids whose motion is driven by an imposed electric field. At a fluid interface, a screening cloud of ions develops and forms an electro-chemical double layer or Debye layer. The imposed field acts on this induced charge distribution, resulting in a strong slip flow near the interface. We formulate a ``hybrid'' or multiscale numerical method in the thin Debye layer limit that incorporates an asymptotic analysis of the electrostatic potential and fluid dynamics in the Debye layer into a boundary integral solution of the full moving boundary problem. Results of the method are presented that show time-dependent deformation and steady state drop interface shapes when the timescale for charge-up of the Debye layer is either much less than or comparable to the timescale of the flow.

Induced superconductivity in the three-dimensional topological insulator HgTe.

PubMed

Maier, Luis; Oostinga, Jeroen B; Knott, Daniel; Brüne, Christoph; Virtanen, Pauli; Tkachov, Grigory; Hankiewicz, Ewelina M; Gould, Charles; Buhmann, Hartmut; Molenkamp, Laurens W

2012-11-02

A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as a superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measurements. This anomaly originates from proximity-induced superconductivity in the HgTe surface states. In the most transparent junction, we observe periodic oscillations of the differential resistance as a function of an applied magnetic field, which correspond to a Fraunhofer-like pattern. This unambiguously shows that a precursor of the Josephson effect occurs in the topological surface states of HgTe.

Introduction of Si/SiO{sub 2} interface states by annealing Ge-implanted films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marstein, E.S.; Gunnaes, A.E.; Olsen, A.

2004-10-15

Nanocrystals embedded in SiO{sub 2} films are the subject of a number of recent works, mainly because of their potential usefulness in the fabrication of optoelectronic devices and nanocrystal memory structures. One interesting method for the fabrication of such nanocrystals is the ion implantation of segregating species into SiO{sub 2} films followed by heat treatment in order to induce nanocrystal formation. This method is both relatively simple and also compatible with the current MOS (metal-oxide-semiconductor) device technology. An unintentional effect can occur during the fabrication of nanocrystals using this method, namely a significant diffusion of the implanted species during annealing,more » away from the regions with the highest concentration. The Si/SiO{sub 2} interface can be exposed to this diffusion flux. This can result in an altered interface and have a significant influence on electronic devices. Here, we report on ion implantation of Ge into SiO{sub 2} on Si followed by annealing under conditions, resulting in Ge accumulation at the Si/SiO{sub 2} interface as determined by secondary-ion mass spectroscopy analysis, transmission electron microscopy with energy dispersive analysis of x-rays, and Rutherford backscattering spectrometry. The accumulation of Ge at the Si/SiO{sub 2} interface has also been reported before. The resulting effect on the electronic structure of the interface is a priori unknown. We have fabricated MOS capacitors on the sample structures and their capacitance-voltage characteristics were measured and analyzed. We measure an interface state density around 1x10{sup 12} cm{sup -2}, which is high compared to standard Si MOS devices. We discuss the results in terms of the previous electrical measurements on Ge-oxide interfaces and SiGe interfaces, which also can yield a high interface state density. The specific conditions we report result in a sufficiently low Ge concentration that nanocrystals are not segregated in the SiO{sub 2} film, while Ge still accumulates at the Si/SiO{sub 2} interface after annealing.« less

Probing the Self-Assembly and the Accompanying Structural Changes of Hydrophobin SC3 on a Hydrophobic Surface by Mass Spectrometry

PubMed Central

Wang, X.; Permentier, H. P.; Rink, R.; Kruijtzer, J. A. W.; Liskamp, R. M. J.; Wösten, H. A. B.; Poolman, B.; Robillard, G. T.

2004-01-01

The fungal class I hydrophobin SC3 self-assembles into an amphipathic membrane at hydrophilic-hydrophobic interfaces such as the water-air and water-Teflon interface. During self-assembly, the water-soluble state of SC3 proceeds via the intermediate α-helical state to the stable end form called the β-sheet state. Self-assembly of the hydrophobin at the Teflon surface is arrested in the α-helical state. The β-sheet state can be induced at elevated temperature in the presence of detergent. The structural changes of SC3 were monitored by various mass spectrometry techniques. We show that the so-called second loop of SC3 (C39–S72) has a high affinity for Teflon. Binding of this part of SC3 to Teflon was accompanied by the formation of α-helical structure and resulted in low solvent accessibility. The solvent-protected region of the second loop extended upon conversion to the β-sheet state. In contrast, the C-terminal part of SC3 became more exposed to the solvent. The results indicate that the second loop of class I hydrophobins plays a pivotal role in self-assembly at the hydrophilic-hydrophobic interface. Of interest, this loop is much smaller in case of class II hydrophobins, which may explain the differences in their assembly. PMID:15345568

Design of n - and p -type oxide thermoelectrics in LaNiO3/SrTiO3(001 ) superlattices exploiting interface polarity

NASA Astrophysics Data System (ADS)

Geisler, Benjamin; Blanca-Romero, Ariadna; Pentcheva, Rossitza

2017-03-01

We investigate the structural, electronic, transport, and thermoelectric properties of LaNiO3/SrTiO3(001 ) superlattices containing either exclusively n - or p -type interfaces or coupled interfaces of opposite polarity by using density functional theory calculations with an on-site Coulomb repulsion term. The results show that significant octahedral tilts are induced in the SrTiO3 part of the superlattice. Moreover, the La-Sr distances and Ni-O out-of-plane bond lengths at the interfaces exhibit a distinct variation by about 7 % with the sign of the electrostatic doping. In contrast to the much studied LaAlO3/SrTiO3 system, the charge mismatch at the interfaces is exclusively accommodated within the LaNiO3 layers, whereas the interface polarity leads to a band offset and to the formation of an electric field within the coupled superlattice. Features of the electronic structure indicate an orbital-selective quantization of quantum well states. The potential- and confinement-induced multiband splitting results in complex cylindrical Fermi surfaces with a tendency towards nesting that depends on the interface polarity. The analysis of the thermoelectric response reveals a particularly large positive Seebeck coefficient (135 μ V /K) and a high figure of merit (0.35) for room-temperature cross-plane transport in the p -type superlattice that is attributed to the participation of the SrTiO3 valence band. Superlattices with either n - or p -type interfaces show cross-plane Seebeck coefficients of opposite sign and thus emerge as a platform to construct an oxide-based thermoelectric generator with structurally and electronically compatible n - and p -type oxide thermoelectrics.

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

PubMed

Kioseoglou, J; Pontikis, V; Komninou, Ph; Pavloudis, Th; Chen, J; Karakostas, Th

2015-04-01

AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar <0 0 0 1> direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

Tuning Magnetic Order in Transition Metal Oxide Thin Films

NASA Astrophysics Data System (ADS)

Grutter, Alexander John

In recent decades, one of the most active and promising areas of condensed matter research has been that of complex oxides. With the advent of new growth techniques such as pulsed laser deposition and molecular beam epitaxy, a wealth of new magnetic and electronic ground states have emerged in complex oxide heterostructures. The wide variety of ground states in complex oxides is well known and generally attributed to the unprecedented variety of valence, structure, and bonding available in these systems. The tunability of this already diverse playground of states and interactions is greatly multiplied in thin films and heterostructures by the addition of parameters such as substrate induced strain and interfacial electronic reconstruction. Thus, recent studies have shown emergent properties such as the stabilization of ferromagnetism in a paramagnetic system, conductivity at the interface of two insulators, and even exchange bias at the interface between a paramagnet and a ferromagnet. Despite these steps forward, there remains remarkable disagreement on the mechanisms by which these emergent phenomena are stabilized. The contributions of strain, stoichiometry, defects, intermixing, and electronic reconstruction are often very difficult to isolate in thin films and superlattices. This thesis will present model systems for isolating the effects of strain and interfacial electronic interactions on the magnetic state of complex oxides from alternative contributions. We will focus first on SrRuO3, an ideal system in which to isolate substrate induced strain effects. We explore the effects of structural distortions in the simplest case of growth on (100) oriented substrates. We find that parameters including saturated magnetic moment and Curie temperature are all highly tunable through substrate induced lattice distortions. We also report the stabilization of a nonmagnetic spin-zero configuration of Ru4+ in tetragonally distorted films under tensile strain. Through growth on (110) and (111) oriented substrates we explore the effects of different distortion symmetries on SrRuO3 and demonstrate the first reported strain induced transition to a high-spin state of Ru 4+. Finally, we examine the effects of strain on SrRuO3 thin films and demonstrate a completely reversible universal out-of-plane magnetic easy axis on films grown on different substrate orientations. Having demonstrated the ability to tune nearly every magnetic parameter of SrRuO 3 through strain, we turn to magnetic properties at interfaces. We study the emergent interfacial ferromagnetism in superlattices of the paramagnetic metal CaRuO3 and the antiferromagnetic insulator CaMnO3 and demonstrate that the interfacial ferromagnetic layer in this system is confined to a single unit cell of CaMnO3 at the interface. We discuss the remarkable oscillatory dependence of the saturated magnetic moment on the thickness of the CaMnO3 layers and explore mechanisms by which this oscillation may be stabilized. We find long range coherence of the antiferromagnetism of the CaMnO3 layers across intervening layers of paramagnetic CaRuO3. Finally, we utilize the system of LaNiO3/CaMnO3 to separate the effects of intermixing and interfacial electronic reconstruction and conclusively demonstrate intrinsic interfacial ferromagnetism at the interface between a paramagnetic metal and an antiferromagnetic insulator. We find that the emergent ferromagnetism is stabilized through interfacial double exchange and that the leakage of conduction electrons from the paramagnetic metal to the antiferromagnetic insulator is critical to establishing the ferromagnetic ground state.

Protein denaturants at aqueous-hydrophobic interfaces: self-consistent correlation between induced interfacial fluctuations and denaturant stability at the interface.

PubMed

Cui, Di; Ou, Shu-Ching; Patel, Sandeep

2015-01-08

The notion of direct interaction between denaturing cosolvent and protein residues has been proposed in dialogue relevant to molecular mechanisms of protein denaturation. Here we consider the correlation between free energetic stability and induced fluctuations of an aqueous-hydrophobic interface between a model hydrophobically associating protein, HFBII, and two common protein denaturants, guanidinium cation (Gdm(+)) and urea. We compute potentials of mean force along an order parameter that brings the solute molecule close to the known hydrophobic region of the protein. We assess potentials of mean force for different relative orientations between the protein and denaturant molecule. We find that in both cases of guanidinium cation and urea relative orientations of the denaturant molecule that are parallel to the local protein-water interface exhibit greater stability compared to edge-on or perpendicular orientations. This behavior has been observed for guanidinium/methylguanidinium cations at the liquid-vapor interface of water, and thus the present results further corroborate earlier findings. Further analysis of the induced fluctuations of the aqueous-hydrophobic interface upon approach of the denaturant molecule indicates that the parallel orientation, displaying a greater stability at the interface, also induces larger fluctuations of the interface compared to the perpendicular orientations. The correlation of interfacial stability and induced interface fluctuation is a recurring theme for interface-stable solutes at hydrophobic interfaces. Moreover, observed correlations between interface stability and induced fluctuations recapitulate connections to local hydration structure and patterns around solutes as evidenced by experiment (Cooper et al., J. Phys. Chem. A 2014, 118, 5657.) and high-level ab initio/DFT calculations (Baer et al., Faraday Discuss 2013, 160, 89).

Protein Denaturants at Aqueous–Hydrophobic Interfaces: Self-Consistent Correlation between Induced Interfacial Fluctuations and Denaturant Stability at the Interface

PubMed Central

2015-01-01

The notion of direct interaction between denaturing cosolvent and protein residues has been proposed in dialogue relevant to molecular mechanisms of protein denaturation. Here we consider the correlation between free energetic stability and induced fluctuations of an aqueous–hydrophobic interface between a model hydrophobically associating protein, HFBII, and two common protein denaturants, guanidinium cation (Gdm+) and urea. We compute potentials of mean force along an order parameter that brings the solute molecule close to the known hydrophobic region of the protein. We assess potentials of mean force for different relative orientations between the protein and denaturant molecule. We find that in both cases of guanidinium cation and urea relative orientations of the denaturant molecule that are parallel to the local protein–water interface exhibit greater stability compared to edge-on or perpendicular orientations. This behavior has been observed for guanidinium/methylguanidinium cations at the liquid–vapor interface of water, and thus the present results further corroborate earlier findings. Further analysis of the induced fluctuations of the aqueous–hydrophobic interface upon approach of the denaturant molecule indicates that the parallel orientation, displaying a greater stability at the interface, also induces larger fluctuations of the interface compared to the perpendicular orientations. The correlation of interfacial stability and induced interface fluctuation is a recurring theme for interface-stable solutes at hydrophobic interfaces. Moreover, observed correlations between interface stability and induced fluctuations recapitulate connections to local hydration structure and patterns around solutes as evidenced by experiment (Cooper et al., J. Phys. Chem. A2014, 118, 5657.) and high-level ab initio/DFT calculations (Baer et al., Faraday Discuss2013, 160, 89). PMID:25536388

Tunnelling spectroscopy of gate-induced superconductivity in MoS2

NASA Astrophysics Data System (ADS)

Costanzo, Davide; Zhang, Haijing; Reddy, Bojja Aditya; Berger, Helmuth; Morpurgo, Alberto F.

2018-06-01

The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nanoelectronics. With the exception of LaAlO3/SrTiO3 interfaces, experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. Here, we explore gate-induced superconductivity in MoS2 by performing tunnelling spectroscopy to determine the energy-dependent density of states (DOS) for different levels of electron density n. In the superconducting state, the DOS is strongly suppressed at energy smaller than the gap Δ, which is maximum (Δ 2 meV) for n of 1 × 1014 cm-2 and decreases monotonously for larger n. A perpendicular magnetic field B generates states at E < Δ that fill the gap, but a 20% DOS suppression of superconducting origin unexpectedly persists much above the transport critical field. Conversely, an in-plane field up to 10 T leaves the DOS entirely unchanged. Our measurements exclude that the superconducting state in MoS2 is fully gapped and reveal the presence of a DOS that vanishes linearly with energy, the explanation of which requires going beyond a conventional, purely phonon-driven Bardeen-Cooper-Schrieffer mechanism.

Creating and optimizing interfaces for electric-field and photon-induced charge transfer.

PubMed

Park, Byoungnam; Whitham, Kevin; Cho, Jiung; Reichmanis, Elsa

2012-11-27

We create and optimize a structurally well-defined electron donor-acceptor planar heterojunction interface in which electric-field and/or photon-induced charge transfer occurs. Electric-field-induced charge transfer in the dark and exciton dissociation at a pentacene/PCBM interface were probed by in situ thickness-dependent threshold voltage shift measurements in field-effect transistor devices during the formation of the interface. Electric-field-induced charge transfer at the interface in the dark is correlated with development of the pentacene accumulation layer close to PCBM, that is, including interface area, and dielectric relaxation time in PCBM. Further, we demonstrate an in situ test structure that allows probing of both exciton diffusion length and charge transport properties, crucial for optimizing optoelectronic devices. Competition between the optical absorption length and the exciton diffusion length in pentacene governs exciton dissociation at the interface. Charge transfer mechanisms in the dark and under illumination are detailed.

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

PubMed

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

The Self-Paced Graz Brain-Computer Interface: Methods and Applications

PubMed Central

Scherer, Reinhold; Schloegl, Alois; Lee, Felix; Bischof, Horst; Janša, Janez; Pfurtscheller, Gert

2007-01-01

We present the self-paced 3-class Graz brain-computer interface (BCI) which is based on the detection of sensorimotor electroencephalogram (EEG) rhythms induced by motor imagery. Self-paced operation means that the BCI is able to determine whether the ongoing brain activity is intended as control signal (intentional control) or not (non-control state). The presented system is able to automatically reduce electrooculogram (EOG) artifacts, to detect electromyographic (EMG) activity, and uses only three bipolar EEG channels. Two applications are presented: the freeSpace virtual environment (VE) and the Brainloop interface. The freeSpace is a computer-game-like application where subjects have to navigate through the environment and collect coins by autonomously selecting navigation commands. Three subjects participated in these feedback experiments and each learned to navigate through the VE and collect coins. Two out of the three succeeded in collecting all three coins. The Brainloop interface provides an interface between the Graz-BCI and Google Earth. PMID:18350133

Phase transition detection by surface photo charge effect in liquid crystals

NASA Astrophysics Data System (ADS)

Ivanov, O.; Petrov, M.; Naradikian, H.; Perez-Diaz, J. L.

2018-05-01

The surface photo charge effect (SPCE) was applied for the first time at structure and phase transitions study of hydrogen bonded in dimer liquid crystals (HBDLCs). Due to the high sensitivity of this method, besides first-order phase transitions, characteristic for the p,n-octyloxibenzoic acids (8OBA), an order transition was definitely detected within the nematic range. We state that the SPCE, arising at the solid-HBDLCs interface due to the double electrical layer, is invariably concomitant with solid surface-liquid interfaces, and indicates that the changes of the characteristics of this layer, under incident optical irradiation, induce surface charge rearrangement and alternating potential difference. A mechanism of induction of the SPCE at the interface of solid surface-anisotropic liquids is proposed. We also indicate that this mechanism can be adapted for solid surface-isotropic liquid interface, including colloids (milk) and fog (aerosols)-condensed medium.

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-03-20

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. Here, we measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. While using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. Furthermore, the relative strengthmore » of the effect is in agreement with spectroscopic measurements and first principles calculations. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

NASA Astrophysics Data System (ADS)

Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

2018-02-01

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

Spin-sensitive interference due to Majorana state on the interface between normal and superconducting leads

NASA Astrophysics Data System (ADS)

Barański, J.; Kobiałka, A.; Domański, T.

2017-02-01

We investigate the subgap spectrum and transport properties of the quantum dot on the interface between the metallic and superconducting leads and additionally side-coupled to the edge of the topological superconducting (TS) chain, hosting the Majorana quasiparticle. Due to the chiral nature of the Majorana states only one spin component of the quantum dot electrons (say \\uparrow ) is directly affected, however the proximity induced on-dot pairing transmits its influence on the opposite spin as well. We investigate the unique interferometric patterns driven by the Majorana quasiparticle that are different for each spin component. We also address the spin-sensitive interplay with the Kondo effect manifested at the same zero-energy and we come to the conclusion that quantum interferometry can unambiguously identify the Majorana quasiparticle.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{supmore » 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.« less

Interfaces and hydrophobic interactions in receptor-ligand systems: A level-set variational implicit solvent approach.

PubMed

Cheng, Li-Tien; Wang, Zhongming; Setny, Piotr; Dzubiella, Joachim; Li, Bo; McCammon, J Andrew

2009-10-14

A model nanometer-sized hydrophobic receptor-ligand system in aqueous solution is studied by the recently developed level-set variational implicit solvent model (VISM). This approach is compared to all-atom computer simulations. The simulations reveal complex hydration effects within the (concave) receptor pocket, sensitive to the distance of the (convex) approaching ligand. The ligand induces and controls an intermittent switching between dry and wet states of the hosting pocket, which determines the range and magnitude of the pocket-ligand attraction. In the level-set VISM, a geometric free-energy functional of all possible solute-solvent interfaces coupled to the local dispersion potential is minimized numerically. This approach captures the distinct metastable states that correspond to topologically different solute-solvent interfaces, and thereby reproduces the bimodal hydration behavior observed in the all-atom simulation. Geometrical singularities formed during the interface relaxation are found to contribute significantly to the energy barrier between different metastable states. While the hydration phenomena can thus be explained by capillary effects, the explicit inclusion of dispersion and curvature corrections seems to be essential for a quantitative description of hydrophobically confined systems on nanoscales. This study may shed more light onto the tight connection between geometric and energetic aspects of biomolecular hydration and may represent a valuable step toward the proper interpretation of experimental receptor-ligand binding rates.

Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure.

PubMed

Nazir, Safdar; Cheng, Jianli; Yang, Kesong

2016-01-13

We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.

Real-Time Monitoring of Azo Dye Interfacial Adsorption at Silica-Water Interface by Total Internal Reflection-Induced Surface Evanescent Wave.

PubMed

Xiong, Yan; Wang, Qing; Duan, Ming; Tan, Jun; Fang, Shenwen; Wu, Jiayi

2018-06-19

An interface research method based on total internal reflection induced evanescent wave (TIR-EW) is developed to monitor the adsorption behavior of azo dye at the silica-water interface. The monitoring system is constructed by employing silica optical fiber (SOF) as both charged substrate for dye adsorption and light transmission waveguide for evanescent wave production. According to the change of evanescent wave intensity and followed by Beer's law, the methylene blue (MB) adsorption behavior can be real-time monitored at the silica-water interface. Langmuir adsorption model and pseudo-first-order model are applied to obtain the related thermodynamic and kinetic data. The adsorption equilibrium constant ( K ads ) and adsorption free energy (Δ G) of MB at the silica-water interface are determined to be (3.3 ± 0.5) × 10 4 M -1 and -25.7 ± 1.7 kJ mol -1 . Meanwhile, this method is highlighted to isolate elementary processes of adsorption and desorption under steady-state conditions, and gives adsorption rate constant ( k a ) and desorption rate constant ( k d ) of 8585 ± 19.8 min -1 and 0.26 ± 0.0006 min -1 for 15 r/min flow rate. The surface interaction process is revealed and adsorption mechanism is proposed, indicating MB first adsorbed on Si-O - sites through electrostatic attraction and then on Si-OH sites through hydrogen bond with increasing MB concentrations. Our findings from this study provided molecular-level interpretation of azo dye adsorption at silica-water interface, and the results provide important insight into how MB adsorption can be controlled at the interface.

Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagase, Takeshi, E-mail: t-nagase@uhvem.osaka-u.ac.jp; Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871; Yamashita, Ryo

2016-04-28

Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiO{sub x}) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiO{sub x}) interface, followed by the formation of a Pd{sub 2}Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiO{sub x} and Pd/SiO{sub x}more » interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.« less

Pressure and partial wetting effects on superhydrophobic friction reduction in microchannel flow

NASA Astrophysics Data System (ADS)

Kim, Tae Jin; Hidrovo, Carlos

2012-11-01

Friction reduction in microchannel flows can help alleviate the inherently taxing pumping power requirements associated with the dimensions involved. One possible way of achieving friction reduction is through the introduction of surface microtexturing that can lead to a superhydrophobic Cassie-Baxter state. The Cassie-Baxter state is characterized by the presence of air pockets within the surface microtexturing believed to act as an effective "shear free" (or at least shear reduced) layer, decreasing the overall friction characteristics of the surface. Most work in this area has concentrated on optimizing the surface microtexturing geometry to maximize the friction reduction effects and overall stability of the Cassie-Baxter state. However, less attention has been paid to the effects of partially wetted conditions induced by pressure and the correlation between the liquid-gas interface location within the surface microtexturing and the microchannel flow characteristics. This is mainly attributed to the difficulty in tracking the interface shape and location within the microtexturing in the typical top-down view arrangements used in most studies. In this paper, a rectangular microchannel with regular microtexturing on the sidewalls is used to visualize and track the location of the air-water interface within the roughness elements. While visually tracking the wetting conditions in the microtextures, pressure drops versus flow rates for each microchannel are measured and analyzed in terms of the non-dimensional friction coefficient. The frictional behavior of the Poiseuille flow suggests that (1) the air-water interface more closely resembles a no-slip boundary rather than a shear-free one, (2) the friction is rather insensitive to the degree of microtexturing wetting, and (3) the fully wetted (Wenzel state) microtexturing provides lower friction than the non-wetted one (Cassie state), in corroboration with observations (1) and (2).

Influence of metallic surface states on electron affinity of epitaxial AlN films

NASA Astrophysics Data System (ADS)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha; Gupta, Govind

2017-06-01

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6-1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2-3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Adsorption-induced conformational changes of antifreeze glycoproteins at the ice/water interface.

PubMed

Uda, Yukihiro; Zepeda, Salvador; Kaneko, Fumitoshi; Matsuura, Yoshiki; Furukawa, Yoshinori

2007-12-27

The conformation of antifreeze glycoprotein (AFGP) molecules adsorbed at the ice/water interface was studied by attenuated total reflection (ATR)-FTIR spectroscopy. Measurements were carried out for AFGP/D2O solution films formed on the surface of an ATR prism as a function of temperature. Using the FTIR spectrum from the O-D stretching band of D2O molecules, we monitored the supercooled and frozen states of the film and measured the thickness of the quasi-liquid layer (QLL) at the ice/prism interfaces. The AFGP structure was determined for the liquid, supercooled, and frozen states of the solution film using the amide I band spectra. No noticeable differences in conformation were observed in the solution conformation from room temperature down to the 15 K supercooling studied, whereas the alpha-helical content of AFGP suddenly increased when the supercooled solution film froze at -15 degrees C. This change in conformation can increase the overall interaction between the AFGP molecules and ice surface and allow a stronger adsorption. In contrast, the alpha-helical content of AFGP in the frozen film gradually decreased with increasing temperature and finally returned to its solution-state level at the melting point of D2O ice. This gradual decrease in the alpha-helix content directly correlates with the measured increase in QLL thickness. Finally, we conclude that the differences in the alpha-helix signals between the frozen and supercooled states indicate the conformational change of AFGP molecules upon adsorption at the ice/water interface, emphasizing the importance of the structure-function relationship, even for this highly flexible antifreeze.

Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jo, Jeong-Wan; Park, Sung Kyu, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr

2014-07-28

In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies bymore » electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.« less

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

NASA Astrophysics Data System (ADS)

Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

2018-05-01

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

Hydrogen incorporation and radiation induced dynamics in metal-oxide-silicon structures: A study using nuclear reaction analysis

NASA Astrophysics Data System (ADS)

Briere, M. A.

Resonant Nuclear Reaction Analysis (NRA), using the H-1/N-15, alpha gamma/c-12 reaction at 6.4 MeV, is successfully applied to the investigation of hydrogen incorporation and radiation induced migration in metal oxide silicon structures. The influence of processing parameters on the H content of thermal oxides, with and without gate material present, is studied. Hydrogen accumulation at the Si-SiO2 interface is reproducibly demonstrated for as-oxidized samples, as well as for oxides exposed to H2 containing atmospheres during subsequent thermal processing. The migration of hydrogen, from the bulk oxide to the silicon oxide interface during NRA, is investigated. It is found that the cross section for this migration, per incident N-15 ion, depends on the sample processing history. It is argued that the release is due to electron capture at Si-OH sites and that the migration is driven by reductions in the interfacial free energy associated with the incorporation of hydrogen within the strained oxide region. A similar migration of hydrogen during irradiation with 2.5 MeV electrons is presented, which suggests that the migration occurs preferentially under applied fields which are directed to the silicon interface. It is argued that this bias effect is due to holes, which modify the interfacial region so as to increase hydrogen solubility, that is explained by the diffusivity of the hydrogen species during N-15 irradiation, which suggest identification as neutral atomic hydrogen. The spatial distribution of hydrogen at the Si-SiO2 interface is shown to be confined to within ca. 2 nm of the metallurgical boundary, in agreement with measurements of the location of oxide charge states, paramagnetic centers, as well as the width of the strained transition region in the neighborhood of this interface. A direct correlation between the hydrogen content of the bulk oxide and the radiation generated oxide charges and interface states is presented. These data provide strong support for the important role of hydrogen in determining the radiation sensitivity of electronic devices.

Brain-computer interface after nervous system injury.

PubMed

Burns, Alexis; Adeli, Hojjat; Buford, John A

2014-12-01

Brain-computer interface (BCI) has proven to be a useful tool for providing alternative communication and mobility to patients suffering from nervous system injury. BCI has been and will continue to be implemented into rehabilitation practices for more interactive and speedy neurological recovery. The most exciting BCI technology is evolving to provide therapeutic benefits by inducing cortical reorganization via neuronal plasticity. This article presents a state-of-the-art review of BCI technology used after nervous system injuries, specifically: amyotrophic lateral sclerosis, Parkinson's disease, spinal cord injury, stroke, and disorders of consciousness. Also presented is transcending, innovative research involving new treatment of neurological disorders. © The Author(s) 2014.

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Matys, M.; Kaneki, S.; Nishiguchi, K.; Adamowicz, B.; Hashizume, T.

2017-12-01

We proposed that the disorder induced gap states (DIGS) can be responsible for the threshold voltage (Vth) instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. In order to verify this hypothesis, we performed the theoretical calculations of the capacitance voltage (C-V) curves for the Al2O3/AlGaN/GaN structures using the DIGS model and compared them with measured ones. We found that the experimental C-V curves with a complex hysteresis behavior varied with the maximum forward bias and the sweeping rate can be well reproduced theoretically by assuming a particular distribution in energy and space of the DIGS continuum near the Al2O3/AlGaN interface, i.e., a U-shaped energy density distribution and exponential depth decay from the interface into Al2O3 layer (up to 4 nm), as well as suitable DIGS capture cross sections (the order of magnitude of 10-15 cm2). Finally, we showed that the DIGS model can also explain the negative bias induced threshold voltage instability. We believe that these results should be critical for the successful development of the passivation techniques, which allows to minimize the Vth instability related effects.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

NASA Astrophysics Data System (ADS)

Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

2015-08-01

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Tuning charge transfer in the LaTiO3/RO/LaNiO3 (R = rare-earth) superlattices by the rare-earth oxides interfaces from a first-principles calculation

NASA Astrophysics Data System (ADS)

Yao, Fen; Zhang, Lifang; Meng, Junling; Liu, Xiaojuan; Zhang, Xiong; Zhang, Wenwen; Meng, Jian; Zhang, Hongjie

2018-03-01

We investigate the internal charge transfer at the isopolar interfaces in LaTiO3/RO/LaNiO3 (R = La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu) superlattices by means of density functional theory calculations. The charge transfer from Ti sites to Ni sites in all superlattices is induced by the electronegativity difference between the elements Ti and Ni, and the lanthanide oxides interfaces can modulate the amount of charge transfer. Comparison of the perovskite heterostructures with the different rare-earth interfaces shows that increasing the deviations of bond angles from 180.0° and the oxygen motions near the interfaces enhance charge transfer. The 4f electrons themselves of rare-earth elements have faint influences on charge transfer. In addition, the reasons why our calculated 4f states of Sm and Tm elements disagree with the experimental systems have been provided. It is hoped that all the calculated results could be used to design new functional nanoelectronic devices in perovskite oxides.

Characterization of opto-electrical enhancement of tandem photoelectrochemical cells by using photoconductive-AFM

NASA Astrophysics Data System (ADS)

Park, Sun-Young; Elbersen, Rick; Huskens, Jurriaan; Gardeniers, Han; Lee, Joo-Yul; Mul, Guido; Heo, Jinhee

2017-07-01

Solar-to-hydrogen conversion by water splitting in photoelectrochemical cells (PECs) is a promising approach to alleviate problems associated with intermittency in solar energy supply and demand. Several interfacial resistances in photoelectrodes limit the performance of such cells, while the properties of interfaces are not easy to analyze in situ. We applied photoconductive-AFM to analyze the performance of WO3/p+n Si photoanodes, containing an ultra-thin metal interface of either Au or Pt. The Au interface consisted of Au nanoparticles with well-ordered interspacing, while Pt was present in the form of a continuous film. Photoconductive-AFM data show that upon illumination significantly larger currents are measured for the WO3/p+n Si anode equipped with the Au interface, as compared to the WO3/p+n Si anode with the Pt interface, in agreement with the better performance of the former electrode in a photoelectrochemical cell. The remarkable performance of the Au-containing electrode is proposed to be the result of favorable electron-hole recombination rates induced by the Au nanoparticles in a plasmon resonance excited state.

Partial liquid-penetration inside a deep trench by film flowing over it

NASA Astrophysics Data System (ADS)

Nguyen, Phuc-Khanh; Dimakopoulos, Yiannis; Tsamopoulos, John

2014-11-01

Liquid film flow along substrates featuring a deep trench may not wet the trench floor, but create a second gas-liquid interface inside the trench. The liquid penetration inside the trench depends on the location and shape of this inner interface. The penetration increases by decreasing the two three-phase contact lines between the inner interface and the two side-walls or the flow rate and depends on the liquid properties. This partial-penetration is studied by employing the Galerkin / finite element method to solve the two-dimensional steady-state Navier-Stokes equations in a physical domain that is adaptively remeshed. Multiple branches of steady solutions connected via turning points are revealed by pseudo arc-length continuation. Flow hysteresis may occur in a certain range of liquid penetration depth, when the interaction of the two interfaces changes qualitatively. This induces an abrupt jump of penetration distance and deformation amplitude of the outer interface. Work supported by the General Secretariat of Research & Technology of Greece through the program ``Excellence'' (Grant No. 1918) in the framework ``Education and Lifelong Learning'' co-funded by the ESF.

Controlling electron beam-induced structure modifications and cation exchange in cadmium sulfide-copper sulfide heterostructured nanorods.

PubMed

Zheng, Haimei; Sadtler, Bryce; Habenicht, Carsten; Freitag, Bert; Alivisatos, A Paul; Kisielowski, Christian

2013-11-01

The atomic structure and interfaces of CdS/Cu2S heterostructured nanorods are investigated with the aberration-corrected TEAM 0.5 electron microscope operated at 80 kV and 300 kV applying in-line holography and complementary techniques. Cu2S exhibits a low-chalcocite structure in pristine CdS/Cu2S nanorods. Under electron beam irradiation the Cu2S phase transforms into a high-chalcocite phase while the CdS phase maintains its wurtzite structure. Time-resolved experiments reveal that Cu(+)-Cd(2+) cation exchange at the CdS/Cu2S interfaces is stimulated by the electron beam and proceeds within an undisturbed and coherent sulfur sub-lattice. A variation of the electron beam current provides an efficient way to control and exploit such irreversible solid-state chemical processes that provide unique information about system dynamics at the atomic scale. Specifically, we show that the electron beam-induced copper-cadmium exchange is site specific and anisotropic. A resulting displacement of the CdS/Cu2S interfaces caused by beam-induced cation interdiffusion equals within a factor of 3-10 previously reported Cu diffusion length measurements in heterostructured CdS/Cu2S thin film solar cells with an activation energy of 0.96 eV. © 2013 Elsevier B.V. All rights reserved.

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

NASA Astrophysics Data System (ADS)

Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

2016-04-01

The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

Visualizing buried silicon atoms at the Cd-Si(111)-7 ×7 interface with localized electrons

NASA Astrophysics Data System (ADS)

Tao, Min-Long; Xiao, Hua-Fang; Sun, Kai; Tu, Yu-Bing; Yuan, Hong-Kuan; Xiong, Zu-Hong; Wang, Jun-Zhong; Xue, Qi-Kun

2017-09-01

We report the atomic-scale imaging of the buried Cd-Si(111)-7 ×7 interface with a low temperature scanning tunneling microscopy (STM). The Cd(0001) films grown on Si(111)-7 ×7 reveal the electronic growth mode, and manifest a series of quantum-well states. In the low-bias STM images, not only the 7 ×7 reconstruction but also individual Si adatoms buried by thick Cd islands are clearly visible. The two successive layers of Cd islands exhibit the distinct contrasts due to the quantum size effect. Moreover, we found a small gap appeared at Fermi level owing to the Anderson localization induced by interface scattering. The perfect transparency of Cd films can be attributed to the anisotropic electron motion, i.e., lateral electron localization and transverse motion like free-electron.

In-depth evolution of chemical states and sub-10-nm-resolution crystal orientation mapping of nanograins in Ti(5 nm)/Au(20 nm)/Cr(3 nm) tri-layer thin films

NASA Astrophysics Data System (ADS)

Zhu, Xiaoli; Todeschini, Matteo; Bastos da Silva Fanta, Alice; Liu, Lintao; Jensen, Flemming; Hübner, Jörg; Jansen, Henri; Han, Anpan; Shi, Peixiong; Ming, Anjie; Xie, Changqing

2018-09-01

The applications of Au thin films and their adhesion layers often suffer from a lack of sufficient information about the chemical states of adhesion layers and about the high-lateral-resolution crystallographic morphology of Au nanograins. Here, we demonstrate the in-depth evolution of the chemical states of adhesive layers at the interfaces and the crystal orientation mapping of gold nanograins with a lateral resolution of less than 10 nm in a Ti/Au/Cr tri-layer thin film system. Using transmission electron microscopy, the variation in the interdiffusion at Cr/Au and Ti/Au interfaces was confirmed. From X-ray photoelectron spectroscopy (XPS) depth profiling, the chemical states of Cr, Au and Ti were characterized layer by layer, suggesting the insufficient oxidation of the adhesive layers. At the interfaces the Au 4f peaks shift to higher binding energies and this behavior can be described by a proposed model based on electron reorganization and substrate-induced final-state neutralization in small Au clusters supported by the partially oxidized Ti layer. Utilizing transmission Kikuchi diffraction (TKD) in a scanning electron microscope, the crystal orientation of Au nanograins between two adhesion layers was non-destructively characterized with sub-10 nm spatial resolution. The results provide nanoscale insights into the Ti/Au/Cr thin film system and contribute to our understanding of its behavior in nano-optic and nano-electronic devices.

Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.

PubMed

Kim, Seung-Yoon; Park, Jong Kyung; Hwang, Wan Sik; Lee, Seung-Jun; Lee, Ki-Hong; Pyi, Seung Ho; Cho, Byung Jin

2016-05-01

We investigated the dependence of grain size on the performance of a polycrystalline silicon (poly-Si) channel TFT for application to 3D NAND Flash memory devices. It has been found that the device performance and memory characteristics are strongly affected by the grain size of the poly-Si channel. Higher on-state current, faster program speed, and poor endurance/reliability properties are observed when the poly-Si grain size is large. These are mainly attributed to the different local electric field induced by an oxide valley at the interface between the poly-Si channel and the gate oxide. In addition, the trap density at the gate oxide interface was successfully measured using a charge pumping method by the separation between the gate oxide interface traps and traps at the grain boundaries in the poly-Si channel. The poly-Si channel with larger grain size has lower interface trap density.

Non-random walk diffusion enhances the sink strength of semicoherent interfaces

DOE PAGES

Vattré, A.; Jourdan, T.; Ding, H.; ...

2016-01-29

Clean, safe and economical nuclear energy requires new materials capable of withstanding severe radiation damage. One strategy of imparting radiation resistance to solids is to incorporate into them a high density of solid-phase interfaces capable of absorbing and annihilating radiation-induced defects. Here we show that elastic interactions between point defects and semicoherent interfaces lead to a marked enhancement in interface sink strength. Our conclusions stem from simulations that integrate first principles, object kinetic Monte Carlo and anisotropic elasticity calculations. Surprisingly, the enhancement in sink strength is not due primarily to increased thermodynamic driving forces, but rather to reduced defect migrationmore » barriers, which induce a preferential drift of defects towards interfaces. The sink strength enhancement is highly sensitive to the detailed character of interfacial stresses, suggesting that ‘super-sink’ interfaces may be designed by optimizing interface stress fields. Lastly, such interfaces may be used to create materials with unprecedented resistance to radiation-induced damage.« less

Driving spin transition at interface: Role of adsorption configurations

NASA Astrophysics Data System (ADS)

Zhang, Yachao

2018-01-01

A clear insight into the electrical manipulation of molecular spins at interface is crucial to the design of molecule-based spintronic devices. Here we report on the electrically driven spin transition in manganocene physisorbed on a metallic surface in two different adsorption configurations predicted by ab initio techniques, including a Hubbard-U correction at the manganese site and accounting for the long-range van der Waals interactions. We show that the application of an electric field at the interface induces a high-spin to low-spin transition in the flat-lying manganocene, while it could hardly alter the high-spin ground state of the standing-up molecule. This phenomenon cannot be explained by either the molecule-metal charge transfer or the local electron correlation effects. We demonstrate a linear dependence of the intra-molecular spin-state splitting on the energy difference between crystal-field splitting and on-site Coulomb repulsion. After considering the molecule-surface binding energy shifts upon spin transition, we reproduce the obtained spin-state energetics. We find that the configuration-dependent responses of the spin-transition originate from the binding energy shifts instead of the variation of the local ligand field. Through these analyses, we obtain an intuitive understanding of the effects of molecule-surface contact on spin-crossover under electrical bias.

Titanium magnetic polarization at the Fe/BaTiO3 interfaces: An effect of ferroelectric polarization discontinuity

NASA Astrophysics Data System (ADS)

Paul, Amitesh; Zheng, Jian-Guo; Aoki, Toshihiro

2017-10-01

The exotic magnetic phenomena and the associated functionalities have attracted extensive scientific interest in fundamental physics and cater to the purpose of the novel material search. In this article, with a combination of the electron energy-loss spectroscopy and the X-ray absorption spectroscopy, we have investigated the interfacial Fe atoms and the induced ferromagnetic moment of Ti atoms in Fe/BaTiO3 (BTO) heterostructures. The samples were grown with two different BTO thicknesses, thus resulting in two different states of distorted oxygen environments or different electrostatic potentials. We demonstrate that in these systems, the electronic and magnetic proximity effects remain coupled as the ferroelectric polar discontinuity is held responsible for an induced transfer of the interface electrons. These electrons migrate from the Fe2+ layers to the Ti(4+)-δ layers with the hybridization via O-2p oxide orbitals into Ti orbitals to screen the ferroelectric polarization. These findings, in charge neutral BaO-TiO2 and FeO layers or nonpolar/nopolar interface, essentially underline the central role of the covalent bonding in defining the spin-electronic properties.

Vapor condensation on liquid surface due to laminar jet-induced mixing: The effects of system parameters

NASA Technical Reports Server (NTRS)

Lin, Chin-Shun; Hasan, Mohammad M.

1989-01-01

The effects of system parameters on the interface condensation rate in a laminar jet induced mixing tank are numerically studied. The physical system consists of a partially filled cylindrical tank with a slightly subcooled jet discharged from the center of the tank bottom toward the liquid-vapor interface which is at a saturation temperature corresponding to the constant tank pressure. Liquid is also withdrawn from the outer part of the tank bottom to maintain the constant liquid level. The jet velocity is selected to be low enough such that the free surface is approximately flat. The effect of vapor superheat is assumed to be negligible. Therefore, the interface condensation rate can be determined from the resulting temperature field in the liquid region alone. The nondimensional form of the steady state conservation equations are solved by a finite difference method for various system parameters including liquid height to tank diameter ratio, tank to jet diameter ratio, liquid inflow to outflow area ratio, and a heat leak parameter which characterizes the uniform wall heat flux. Detailed analyses based on the numerical solutions are performed and simplified equations are suggested for the prediction of condensation rate.

La interstitial defect-induced insulator-metal transition in the oxide heterostructures LaAl O3 /SrTi O3

NASA Astrophysics Data System (ADS)

Zhou, Jun; Yang, Ming; Feng, Yuan Ping; Rusydi, Andrivo

2017-11-01

Perovskite oxide interfaces have attracted tremendous research interest for their fundamental physics and promising all-oxide electronic applications. Here, based on first-principles calculations, we propose a surface La interstitial promoted interface insulator-metal transition in LaAl O3 /SrTi O3 (110). Compared with surface oxygen vacancies, which play a determining role on the insulator-metal transition of LaAl O3 /SrTi O3 (001) interfaces, we find that surface La interstitials can be more experimentally realistic and accessible for manipulation and more stable in an ambient atmospheric environment. Interestingly, these surface La interstitials also induce significant spin-splitting states with a Ti dy z/dx z character at a conducting LaAl O3 /SrTi O3 (110) interface. On the other hand, for insulating LaAl O3 /SrTi O3 (110) (<4 unit cells LaAl O3 thickness), a distortion between La (Al) and O atoms is found at the LaAl O3 side, partially compensating the polarization divergence. Our results reveal the origin of the metal-insulator transition in LaAl O3 /SrTi O3 (110) heterostructures, and also shed light on the manipulation of the superior properties of LaAl O3 /SrTi O3 (110) for different possibilities in electronic and magnetic applications.

Interaction of Porosity with a Planar Solid/Liquid Interface

NASA Technical Reports Server (NTRS)

Catalina, Adrian V.; Stefanescu, Doru M.; Sen, Subhayu; Kaukler, William F.

2004-01-01

In this article, an investigation of the interaction between gas porosity and a planar solid/liquid (SL) interface is reported. A two-dimensional numerical model able to accurately track sharp SL interfaces during solidification of pure metals and alloys is proposed. The finite-difference method and a rectangular undeformed grid are used for computation. The SL interface is described through the points of intersection with the grid lines. Its motion is determined by the thermal and solute gradients at each particular point. Changes of the interface temperature because of capillarity or solute redistribution as well as any perturbation of the thermal and solute field produced by the presence of non-metallic inclusions can be computed. To validate the model, the dynamics of the interaction between a gas pore and a solidification front in metal alloys was observed using a state of the art X-ray transmission microscope (XTM). The experiments included observation of the distortion of the SL interface near a pore, real-time measurements of the growth rate, and the change in shape of the porosity during interaction with the SL interface in pure Al and Al-0.25 wt pct Au alloy. In addition, porosity-induced solute segregation patterns surrounding a pore were also quantified.

Effect of magnetic fullerene on magnetization reversal created at the Fe/C60 interface.

PubMed

Mallik, Srijani; Mattauch, Stefan; Dalai, Manas Kumar; Brückel, Thomas; Bedanta, Subhankar

2018-04-03

Probing the hybridized magnetic interface between organic semiconductor (OSC) and ferromagnetic (FM) layers has drawn significant attention in recent years because of their potential in spintronic applications. Recent studies demonstrate various aspects of organic spintronics such as magnetoresistance, induced interface moment etc. However, not much work has been performed to investigate the implications of such OSC/FM interfaces on the magnetization reversal and domain structure which are the utmost requirements for any applications. Here, we show that non-magnetic Fullerene can obtain non-negligible magnetic moment at the interface of Fe(15 nm)/C 60 (40 nm) bilayer. This leads to substantial effect on both the magnetic domain structure as well as the magnetization reversal when compared to a single layer of Fe(15 nm). This is corroborated by the polarized neutron reflectivity (PNR) data which indicates presence of hybridization at the interface by the reduction of magnetic moment in Fe. Afterwards, upto 1.9 nm of C 60 near the interface exhibits magnetic moment. From the PNR measurements it was found that the magnetic C 60 layer prefers to be aligned anti-parallel with the Fe layer at the remanant state. The later observation has been confirmed by domain imaging via magneto-optic Kerr microscopy.

Local switching of two-dimensional superconductivity using the ferroelectric field effect

NASA Astrophysics Data System (ADS)

Takahashi, K. S.; Gabay, M.; Jaccard, D.; Shibuya, K.; Ohnishi, T.; Lippmaa, M.; Triscone, J.-M.

2006-05-01

Correlated oxides display a variety of extraordinary physical properties including high-temperature superconductivity and colossal magnetoresistance. In these materials, strong electronic correlations often lead to competing ground states that are sensitive to many parameters-in particular the doping level-so that complex phase diagrams are observed. A flexible way to explore the role of doping is to tune the electron or hole concentration with electric fields, as is done in standard semiconductor field effect transistors. Here we demonstrate a model oxide system based on high-quality heterostructures in which the ferroelectric field effect approach can be studied. We use a single-crystal film of the perovskite superconductor Nb-doped SrTiO3 as the superconducting channel and ferroelectric Pb(Zr,Ti)O3 as the gate oxide. Atomic force microscopy is used to locally reverse the ferroelectric polarization, thus inducing large resistivity and carrier modulations, resulting in a clear shift in the superconducting critical temperature. Field-induced switching from the normal state to the (zero resistance) superconducting state was achieved at a well-defined temperature. This unique system could lead to a field of research in which devices are realized by locally defining in the same material superconducting and normal regions with `perfect' interfaces, the interface being purely electronic. Using this approach, one could potentially design one-dimensional superconducting wires, superconducting rings and junctions, superconducting quantum interference devices (SQUIDs) or arrays of pinning centres.

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Theory of wave propagation in magnetized near-zero-epsilon metamaterials: evidence for one-way photonic states and magnetically switched transparency and opacity.

PubMed

Davoyan, Arthur R; Engheta, Nader

2013-12-20

We study propagation of transverse-magnetic electromagnetic waves in the bulk and at the surface of a magnetized epsilon-near-zero (ENZ) medium in a Voigt configuration. We reveal that in a certain range of material parameters novel regimes of wave propagation emerge; we show that the transparency of the medium can be altered with the magnetization leading either to magnetically induced Hall opacity or Hall transparency of the ENZ. In our theoretical study, we demonstrate that surface waves at the interface between either a transparent or an opaque Hall medium and a homogeneous medium may, under certain conditions, be predominantly one way. Moreover, we predict that one-way photonic surface states may exist at the interface of an opaque Hall ENZ and a regular metal, giving rise to the possibility for backscattering immune wave propagation and isolation.

The frequency response of dynamic friction: Enhanced rate-and-state models

NASA Astrophysics Data System (ADS)

Cabboi, A.; Putelat, T.; Woodhouse, J.

2016-07-01

The prediction and control of friction-induced vibration requires a sufficiently accurate constitutive law for dynamic friction at the sliding interface: for linearised stability analysis, this requirement takes the form of a frictional frequency response function. Systematic measurements of this frictional frequency response function are presented for small samples of nylon and polycarbonate sliding against a glass disc. Previous efforts to explain such measurements from a theoretical model have failed, but an enhanced rate-and-state model is presented which is shown to match the measurements remarkably well. The tested parameter space covers a range of normal forces (10-50 N), of sliding speeds (1-10 mm/s) and frequencies (100-2000 Hz). The key new ingredient in the model is the inclusion of contact stiffness to take into account elastic deformations near the interface. A systematic methodology is presented to discriminate among possible variants of the model, and then to identify the model parameter values.

Can interface features affect aggression resulting from violent video game play? An examination of realistic controller and large screen size.

PubMed

Kim, Ki Joon; Sundar, S Shyam

2013-05-01

Aggressiveness attributed to violent video game play is typically studied as a function of the content features of the game. However, can interface features of the game also affect aggression? Guided by the General Aggression Model (GAM), we examine the controller type (gun replica vs. mouse) and screen size (large vs. small) as key technological aspects that may affect the state aggression of gamers, with spatial presence and arousal as potential mediators. Results from a between-subjects experiment showed that a realistic controller and a large screen display induced greater aggression, presence, and arousal than a conventional mouse and a small screen display, respectively, and confirmed that trait aggression was a significant predictor of gamers' state aggression. Contrary to GAM, however, arousal showed no effects on aggression; instead, presence emerged as a significant mediator.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Time domain optical coherence tomography investigation of bone matrix interface in rat femurs

NASA Astrophysics Data System (ADS)

Rusu, Laura-Cristina; Negruá¹±iu, Meda-Lavinia; Sinescu, Cosmin; Hoinoiu, Bogdan; Topala, Florin-Ionel; Duma, Virgil-Florin; Rominu, Mihai; Podoleanu, Adrian G.

2013-08-01

The materials used to fabricate scaffolds for tissue engineering are derived from synthetic polymers, mainly from the polyester family, or from natural materials (e.g., collagen and chitosan). The mechanical properties and the structural properties of these materials can be tailored by adjusting the molecular weight, the crystalline state, and the ratio of monomers in the copolymers. Quality control and adjustment of the scaffold manufacturing process are essential to achieve high standard scaffolds. Most scaffolds are made from highly crystalline polymers, which inevitably result in their opaque appearance. Their 3-D opaque structure prevents the observation of internal uneven surface structures of the scaffolds under normal optical instruments, such as the traditional light microscope. The inability to easily monitor the inner structure of scaffolds as well as the interface with the old bone poses a major challenge for tissue engineering: it impedes the precise control and adjustment of the parameters that affect the cell growth in response to various mimicked culture conditions. The aim of this paper is to investigate the interface between the femur rat bone and the new bone that is obtained using a method of tissue engineering that is based on different artificial matrixes inserted in previously artificially induced defects. For this study, 15 rats were used in conformity with ethical procedures. In all the femurs a round defect was induced by drilling with a 1 mm spherical Co-Cr surgical drill. The matrixes used were Bioss and 4bone. These materials were inserted into the induced defects. The femurs were investigated at 1 week, 1 month, 2 month and three month after the surgical procedures. The interfaces were examined using Time Domain (TD) Optical Coherence Tomography (OCT) combined with Confocal Microscopy (CM). The optical configuration uses two single mode directional couplers with a superluminiscent diode as the source centered at 1300 nm. The scanning procedure is similar to that used in any CM, where the fast scanning is en-face (line rate) and the scanning in depth is much slower (at the frame rate). The results showed open interfaces due to the insufficient healing process, as well as closed interfaces due to a new bone formation inside the defect. The conclusion of this study is that TD-OCT can act as a valuable tool in the investigation of the interface between the old bone and the one that has been newly induced due to the osteoinductive process.

Affective Aspects of Perceived Loss of Control and Potential Implications for Brain-Computer Interfaces.

PubMed

Grissmann, Sebastian; Zander, Thorsten O; Faller, Josef; Brönstrup, Jonas; Kelava, Augustin; Gramann, Klaus; Gerjets, Peter

2017-01-01

Most brain-computer interfaces (BCIs) focus on detecting single aspects of user states (e.g., motor imagery) in the electroencephalogram (EEG) in order to use these aspects as control input for external systems. This communication can be effective, but unaccounted mental processes can interfere with signals used for classification and thereby introduce changes in the signal properties which could potentially impede BCI classification performance. To improve BCI performance, we propose deploying an approach that potentially allows to describe different mental states that could influence BCI performance. To test this approach, we analyzed neural signatures of potential affective states in data collected in a paradigm where the complex user state of perceived loss of control (LOC) was induced. In this article, source localization methods were used to identify brain dynamics with source located outside but affecting the signal of interest originating from the primary motor areas, pointing to interfering processes in the brain during natural human-machine interaction. In particular, we found affective correlates which were related to perceived LOC. We conclude that additional context information about the ongoing user state might help to improve the applicability of BCIs to real-world scenarios.

Affective Aspects of Perceived Loss of Control and Potential Implications for Brain-Computer Interfaces

PubMed Central

Grissmann, Sebastian; Zander, Thorsten O.; Faller, Josef; Brönstrup, Jonas; Kelava, Augustin; Gramann, Klaus; Gerjets, Peter

2017-01-01

Most brain-computer interfaces (BCIs) focus on detecting single aspects of user states (e.g., motor imagery) in the electroencephalogram (EEG) in order to use these aspects as control input for external systems. This communication can be effective, but unaccounted mental processes can interfere with signals used for classification and thereby introduce changes in the signal properties which could potentially impede BCI classification performance. To improve BCI performance, we propose deploying an approach that potentially allows to describe different mental states that could influence BCI performance. To test this approach, we analyzed neural signatures of potential affective states in data collected in a paradigm where the complex user state of perceived loss of control (LOC) was induced. In this article, source localization methods were used to identify brain dynamics with source located outside but affecting the signal of interest originating from the primary motor areas, pointing to interfering processes in the brain during natural human-machine interaction. In particular, we found affective correlates which were related to perceived LOC. We conclude that additional context information about the ongoing user state might help to improve the applicability of BCIs to real-world scenarios. PMID:28769776

Nano- and microparticles at fluid and biological interfaces.

PubMed

Dasgupta, S; Auth, T; Gompper, G

2017-09-20

Systems with interfaces are abundant in both technological applications and biology. While a fluid interface separates two fluids, membranes separate the inside of vesicles from the outside, the interior of biological cells from the environment, and compartmentalize cells into organelles. The physical properties of interfaces are characterized by interface tension, those of membranes are characterized by bending and stretching elasticity. Amphiphilic molecules like surfactants that are added to a system with two immiscible fluids decrease the interface tension and induce a bending rigidity. Lipid bilayer membranes of vesicles can be stretched or compressed by osmotic pressure; in biological cells, also the presence of a cytoskeleton can induce membrane tension. If the thickness of the interface or the membrane is small compared with its lateral extension, both can be described using two-dimensional mathematical surfaces embedded in three-dimensional space. We review recent work on the interaction of particles with interfaces and membranes. This can be micrometer-sized particles at interfaces that stabilise emulsions or form colloidosomes, as well as typically nanometer-sized particles at membranes, such as viruses, parasites, and engineered drug delivery systems. In both cases, we first discuss the interaction of single particles with interfaces and membranes, e.g. particles in external fields, non-spherical particles, and particles at curved interfaces, followed by interface-mediated interaction between two particles, many-particle interactions, interface and membrane curvature-induced phenomena, and applications.

Nano- and microparticles at fluid and biological interfaces

NASA Astrophysics Data System (ADS)

Dasgupta, S.; Auth, T.; Gompper, G.

2017-09-01

Systems with interfaces are abundant in both technological applications and biology. While a fluid interface separates two fluids, membranes separate the inside of vesicles from the outside, the interior of biological cells from the environment, and compartmentalize cells into organelles. The physical properties of interfaces are characterized by interface tension, those of membranes are characterized by bending and stretching elasticity. Amphiphilic molecules like surfactants that are added to a system with two immiscible fluids decrease the interface tension and induce a bending rigidity. Lipid bilayer membranes of vesicles can be stretched or compressed by osmotic pressure; in biological cells, also the presence of a cytoskeleton can induce membrane tension. If the thickness of the interface or the membrane is small compared with its lateral extension, both can be described using two-dimensional mathematical surfaces embedded in three-dimensional space. We review recent work on the interaction of particles with interfaces and membranes. This can be micrometer-sized particles at interfaces that stabilise emulsions or form colloidosomes, as well as typically nanometer-sized particles at membranes, such as viruses, parasites, and engineered drug delivery systems. In both cases, we first discuss the interaction of single particles with interfaces and membranes, e.g. particles in external fields, non-spherical particles, and particles at curved interfaces, followed by interface-mediated interaction between two particles, many-particle interactions, interface and membrane curvature-induced phenomena, and applications.

Water Dynamics at Protein-Protein Interfaces: Molecular Dynamics Study of Virus-Host Receptor Complexes.

PubMed

Dutta, Priyanka; Botlani, Mohsen; Varma, Sameer

2014-12-26

The dynamical properties of water at protein-water interfaces are unlike those in the bulk. Here we utilize molecular dynamics simulations to study water dynamics in interstitial regions between two proteins. We consider two natural protein-protein complexes, one in which the Nipah virus G protein binds to cellular ephrin B2 and the other in which the same G protein binds to ephrin B3. While the two complexes are structurally similar, the two ephrins share only a modest sequence identity of ∼50%. X-ray crystallography also suggests that these interfaces are fairly extensive and contain exceptionally large amounts of waters. We find that while the interstitial waters tend to occupy crystallographic sites, almost all waters exhibit residence times of less than hundred picoseconds in the interstitial region. We also find that while the differences in the sequence of the two ephrins result in quantitative differences in the dynamics of interstitial waters, the trends in the shifts with respect to bulk values are similar. Despite the high wetness of the protein-protein interfaces, the dynamics of interstitial waters are considerably slower compared to the bulk-the interstitial waters diffuse an order of magnitude slower and have 2-3 fold longer hydrogen bond lifetimes and 2-1000 fold slower dipole relaxation rates. To understand the role of interstitial waters, we examine how implicit solvent models compare against explicit solvent models in producing ephrin-induced shifts in the G conformational density. Ephrin-induced shifts in the G conformational density are critical to the allosteric activation of another viral protein that mediates fusion. We find that in comparison with the explicit solvent model, the implicit solvent model predicts a more compact G-B2 interface, presumably because of the absence of discrete waters at the G-B2 interface. Simultaneously, we find that the two models yield strikingly different induced changes in the G conformational density, even for those residues whose conformational densities in the apo state are unaffected by the treatment of the bulk solvent. Together, these results show that the explicit treatment of interstitial water molecules is necessary for a proper description of allosteric transitions.

Molecular dynamics modeling of helium bubbles in austenitic steels

NASA Astrophysics Data System (ADS)

Jelea, A.

2018-06-01

The austenitic steel devices from pressurized water reactors are continuously subjected to neutron irradiation that produces crystalline point defects and helium atoms in the steel matrix. These species evolve into large defects such as dislocation loops and helium filled bubbles. This paper analyzes, through molecular dynamics simulations with recently developed interatomic potentials, the impact of the helium/steel interface on the helium behavior in nanosize bubbles trapped in an austenitic steel matrix. It is shown that the repulsive helium-steel interactions induce higher pressures in the bubble compared to bulk helium at the same temperature and average density. A new equation of state for helium is proposed in order to take into account these interface effects.

Boosting hot electron flux and catalytic activity at metal-oxide interfaces of PtCo bimetallic nanoparticles.

PubMed

Lee, Hyosun; Lim, Juhyung; Lee, Changhwan; Back, Seoin; An, Kwangjin; Shin, Jae Won; Ryoo, Ryong; Jung, Yousung; Park, Jeong Young

2018-06-08

Despite numerous studies, the origin of the enhanced catalytic performance of bimetallic nanoparticles (NPs) remains elusive because of the ever-changing surface structures, compositions, and oxidation states of NPs under reaction conditions. An effective strategy for obtaining critical clues for the phenomenon is real-time quantitative detection of hot electrons induced by a chemical reaction on the catalysts. Here, we investigate hot electrons excited on PtCo bimetallic NPs during H 2 oxidation by measuring the chemicurrent on a catalytic nanodiode while changing the Pt composition of the NPs. We reveal that the presence of a CoO/Pt interface enables efficient transport of electrons and higher catalytic activity for PtCo NPs. These results are consistent with theoretical calculations suggesting that lower activation energy and higher exothermicity are required for the reaction at the CoO/Pt interface.

Optical Radiation from Shock-Compressed Materials. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Svendsen, Robert F., Jr.

1987-01-01

Recent observations of shock-induced radiation from oxides, silicates, and metals of geophysical interest constrain the shock-compressed temperature of these materials. The relationships between the temperature inferred from the observed radiation and the temperature of the shock-compressed film or foil and/or window were investigated. Changes of the temperature field in each target component away from that of their respective shock-compressed states occur because of: shock-impedance mismatch between target components; thermal mismatch between target components; surface roughness at target interfaces; and conduction within and between target components. In particular, conduction may affect the temperature of the film/foil window interface on the time scale of the experiments, and so control the intensity and history of the dominant thermal radiation sources in the target. This type of model was used to interpret the radiation emitted by a variety of shock-compressed materials and interfaces.

Bacteria interface interactions in Ecology-on-a-Chip by holographic microscopy and interferometry

NASA Astrophysics Data System (ADS)

Sheng, Jian; White, Andrew; Jalali, Maryam

2017-11-01

To improve our remediation of oil spills into marine system, one must understand the fate of oil under complex physical, chemical and biological environments. It is found that various processes such as wind, wave, turbulence and currents break oil into suspensions of droplets, in which states consumption by microbial further degrade the oil. Our prior studies show that marine bacteria do not adopt biofilm life style at oil-water interface in comparison to those near a solid substrate. On the contrary, Extracellular Polymer Substance of oily microbial aggregates is easily formed around an oil droplet. This highlights complexities of cell oil interactions at a liquid-liquid interface. To investigate these mechanisms at oil water interface quantitative, we have developed a micro-bioassay consisting of continuous microfluidics with a substrate printed with oil droplet array, namely Ecology-on-a-Chip, and an integrated digital holographic microscopy (DHM) and interferometer (DHI). The oil-water interface can be maintained over days (>10 days), suitable for conducting long-term observations. 3D movements of bacteria are tracked by DHM, while the interface morphology are measured by DHI at 10nm. The system is applied to Pseudomonas sp. (PS62) near crude-water interface and Escherichia coli (AW405) at hexadecane-water interface subject to low surface tension. The 3D motility, attachment, detachment and dispersion of cells as well as motility induced interface change are discussed. Funded by Gulf of Mexico Research Initiative (GoMRI).

Positron states on the Cs/Cu(100) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koeymen, A.R.; Lee, K.H.; Mehl, D.

1991-02-01

The attenuation of the CuM{sub 23}VV Auger peak with Cs coverage on Cu(100) is measured using both positron-annihilation-induced Auger electron emission (PAES) and conventional (electron induced) Auger electron spectroscopy (EAES). The Cs coverage varies from 0 to 1 physical monolayer (ML). The data indicates that below 0.5 ML in agreement with first order theoretical calculations the positrons are trapped at the Cu/Cs interface. At higher Cs coverages the thermal desorption of the positrons as positronium drops the PAES intensity to zero whereas the EAES signal changes linearly as expected.

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

NASA Astrophysics Data System (ADS)

Kononov, A.; Kostarev, V. A.; Semyagin, B. R.; Preobrazhenskii, V. V.; Putyato, M. A.; Emelyanov, E. A.; Deviatov, E. V.

2017-12-01

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of the InAs/GaSb spectrum, we study samples with 10-nm-, 12-nm-, and 14-nm-thick InAs quantum wells. For the trivial case of a direct band insulator in 10 nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12 and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14 nm InAs well samples, we additionally observe mesoscopiclike resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.

Quantum-Fluctuation Effects in the Transport Properties of Ultrathin Films of Disordered Superconductors above the Paramagnetic Limit

NASA Astrophysics Data System (ADS)

Khodas, M.; Levchenko, A.; Catelani, G.

2012-06-01

We study the transport in ultrathin disordered film near the quantum critical point induced by the Zeeman field. We calculate corrections to the normal state conductivity due to quantum pairing fluctuations. The fluctuation-induced transport is mediated by virtual rather than real quasiparticle excitations. We find that at zero temperature, where the corrections come from purely quantum fluctuations, the Aslamazov-Larkin paraconductivity term, the Maki-Thompson interference contribution, and the density of states effects are all of the same order. The total correction leads to the negative magnetoresistance. This result is in qualitative agreement with the recent transport observations in the parallel magnetic field of the homogeneously disordered amorphous films and superconducting two-dimensional electron gas realized at the oxide interfaces.

Lattice structures and electronic properties of CIGS/CdS interface: First-principles calculations

NASA Astrophysics Data System (ADS)

Tang, Fu-Ling; Liu, Ran; Xue, Hong-Tao; Lu, Wen-Jiang; Feng, Yu-Dong; Rui, Zhi-Yuan; Huang, Min

2014-07-01

Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+InCu) CuInGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+InCu) interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the (2VCu+InCu) interface the interface states near the Fermi level in CuInGaSe2 and CdS band gap regions are mainly composed of interfacial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CuInGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region.

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Chen, Hua-Mao; Tseng, Tseung-Yuen; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung

2013-09-01

This work investigates the channel hot carrier (CHC) effect in HfO2/Ti1-xNx p-channel metal oxide semiconductor field effect transistors (p-MOSFETs). Generally, the subthreshold swing (S.S.) should increase during CHC stress (CHCS), since interface states will be generated near the drain side under high electric field due to drain voltage (Vd). However, our experimental data indicate that S.S. has no evident change under CHCS, but threshold voltage (Vth) shifts positively. This result can be attributed to hot carrier injected into high-k dielectric near the drain side. Meanwhile, it is surprising that such Vth degradation is not observed in the saturation region during stress. Therefore, drain-induced-barrier-lowering (DIBL) as a result of CHC-induced electron trapping is proposed to explain the different Vth behaviors in the linear and saturation regions. Additionally, the influence of different nitrogen concentrations in HfO2/Ti1-xNx p-MOSFETs on CHCS is also investigated in this work. Since nitrogen diffuses to SiO2/Si interface induced pre-Nit occurring to degrades channel mobility during the annealing process, a device with more nitrogen shows slightly less impact ionization, leading to insignificant charge trapping-induced DIBL behavior.

On the annealing-induced enhancement of the interface properties of NiO:Cu/wet-SiOx/n-Si tunnelling junction solar cells

NASA Astrophysics Data System (ADS)

Yang, Xueliang; Liu, Wei; Chen, Jingwei; Sun, Yun

2018-04-01

Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential to reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, a p-type oxide, Cu-doped NiO (NiO:Cu), is explored as a transparent hole-selective contact to n-Si. An ultrathin SiOx layer, fabricated by a wet-chemical method (wet-SiOx), is introduced at the NiO:Cu/n-Si interface to achieve a tunnelling junction solar cell. Interestingly, it was observed that the interface quality of the NiO:Cu/wet-SiOx/n-Si heterojunction was dramatically enhanced by post-deposition annealing (PDA) at a temperature of 200 °C. Our device exhibits an improved power conversion efficiency of 10.8%, which is the highest efficiency among NiO/Si heterojunction photo-electric devices to date. It is demonstrated that the 200 °C PDA treatment enhances the built-in field by a reduction in the interface density of states (Dit) but does not influence the work function of the NiO:Cu thin layer. This stable work function after the PDA treatment is in conflict with the changed built-in field according to the Schottky model. Thus, the Bardeen model is introduced for this physical insight: the enhancement of the built-in field originates from the unpinning of the Fermi levels of NiO:Cu and n-Si by the interface state reduction.

Interface roughness mediated phonon relaxation rates in Si quantum dots.

NASA Astrophysics Data System (ADS)

Ferdous, Rifat; Hsueh, Yuling; Klimeck, Gerhard; Rahman, Rajib

2015-03-01

Si QDs are promising candidates for solid-state quantum computing due to long spin coherence times. However, the valley degeneracy in Si adds an additional degree of freedom to the electronic structure. Although the valley and orbital indices can be uniquely identified in an ideal Si QD, interface roughness mixes valley and orbital states in realistic dots. Such valley-orbit coupling can strongly influence T1 times in Si QDs. Recent experimental measurements of various relaxation rates differ from previous predictions of phonon relaxation in ideal Si QDs. To understand how roughness affects different relaxation rates, for example spin relaxation due to spin-valley coupling, which is a byproduct of spin-orbit and valley-orbit coupling, we need to understand the effect of valley-orbit coupling on valley relaxation first. Using a full-band atomistic tight-binding description for both the system's electron and electron-phonon hamiltonian, we analyze the effect of atomic-scale interface disorder on phonon induced valley relaxation and spin relaxation in a Si QD. We find that, the valley splitting dependence of valley relaxation rate governs the magnetic field dependence of spin relaxation rate. Our results help understand experimentally measured relaxation times.

Distinct photoresponse in graphene induced by laser irradiation and interfacial gating.

NASA Astrophysics Data System (ADS)

Wang, Wenhui; Guo, Xitao; Nan, Haiyan; Ni, Zhenhua; Spectroscopy; Optoelectronics Group Team

Graphene-based photodetectors have recently received much attention due to its unique optical and electronic properties. The photoresponse modulation plays a crucial role in the study of photocurrent generation mechanism and optoelectronic applications. Here, the tunable p-p +-p junctions of graphene were fabricated through simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiation graphene (LIG) junction. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junction. On the other hand, the localized interface states, existing at the silicon dioxide/lightly doped Si interface, would induce an interfacial gating mechanism, which will enhance the photoresponsivity to 1000 A/W. More important, the photoresponse time of our device has been pushed to 400ns. The current device structure does not need a complicated fabrication process and is fully compatible with silicon technology. This work will open up a route to graphene-based high-performance optoelectronic devices. This work was supported by Southeast University.

Etude de L'interface Or/silicium Par Analyse de Surface et Microscopie Electronique

NASA Astrophysics Data System (ADS)

Lamontagne, Boris

In order to start with the cleanest c-Si surface achievable, two cleaning procedures have been used and compared: aqueous chemical cleaning with HF, and sputter cleaning followed by high temperature annealing; the former is found to be the most efficient of the two. We have observed the formation of Si-C bonds induced by energetic particles associated to sputtering and sputter deposition. One of the main objectives of this work was to compare the Au/Si interfaces obtained by e-beam evaporation and by sputter deposition; Ag/Si, Cu/Si and Al/Si interfaces have also been examined. X-ray photoelectron diffraction has allowed us to judge the quality of the substrate crystallinity under the metallic overlayer, a method which readily showed the amorphisation of the c-Si substrate induced by sputter deposition. Moreover, XPD has indicated the Au overlayer to be amorphous, while the Ag and Cu appear to grow heteroepitaxially on c-Si(100). A new XPS parameter has been developed to characterize the metal/Si interface state, in particular, broadening of the interface induced by the sputter deposition. For the case of evaporated layers, it indicates that Au/Si and Cu/Si interfaces are diffuse, while Ag/Si and Al/Si interfaces are abrupt. Atomic force microscopy has revealed that sputter deposition reduces the tendency to form metal islands, characteristic of some overlayer/substrate systems such as Ag/Si. Our experiments have illustrated the role of two "new" parameters which lead to better knowledge and control of the sputter deposition process, namely the ion masses and the sample position relative to that of the target position. In the scientific literature, the value of the critical thickness, d_{rm c} , for reaction between Au and Si is still a controversial issue, probably on account of calibration problems. By using newly observed XPS discontinuities, corresponding to the completion of the first and second Au monolayers, we have been able to resolve this problem, and thereby precisely evaluate the critical thickness, d_ {rm c} = 2 ML. We obtained various new information about the Au/Si interface using complementary methods (XPD, XPS, TEM, AFM, etc.) information from which we developed a new model of the Au/Si interface; this so called "cluster model" correlates the observed overlayer structural transition with the beginning of the reaction between Au and Si. It suggests that reconstruction of the overlayer at 2 ML thickness activates the reaction between Si and Au (Si-Si bonds disruption, followed by Si outdiffusion). This model seems to be the only one capable of explaining the difference in reactivity between Au/Si and Ag/Si interfaces. (Abstract shortened by UMI.).

Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shetty, Satish; Shivaprasad, S. M., E-mail: smsprasad@jncasr.ac.in

2016-02-07

We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures—“8 × 8” and “8/3 × 8/3”—form, and further nitridation leads to 1 × 1 stoichiometric silicon nitride. The interface is seen to have the Si{sup 1+} and Si{sup 3+} states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses.more » The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending.« less

Tailoring the Two Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics.

PubMed

Li, Changjian; Liu, Zhiqi; Lü, Weiming; Wang, Xiao Renshaw; Annadi, Anil; Huang, Zhen; Zeng, Shengwei; Ariando; Venkatesan, T

2015-08-26

The 2D electron gas at the polar/non-polar oxide interface has become an important platform for several novel oxide electronic devices. In this paper, the transport properties of a wide range of polar perovskite oxide ABO3/SrTiO3 (STO) interfaces, where ABO3 includes LaAlO3, PrAlO3, NdAlO3, NdGaO3 and LaGaO3 in both crystalline and amorphous forms, were investigated. A robust 4 unit cell (uc) critical thickness for metal insulator transition was observed for crystalline polar layer/STO interface while the critical thickness for amorphous ones was strongly dependent on the B site atom and its oxygen affinity. For the crystalline interfaces, a sharp transition to the metallic state (i.e. polarization catastrophe induced 2D electron gas only) occurs at a growth temperature of 515 °C which corresponds to a critical relative crystallinity of ~70 ± 10% of the LaAlO3 overlayer. This temperature is generally lower than the metal silicide formation temperature and thus offers a route to integrate oxide heterojunction based devices on silicon.

Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces.

PubMed

Su, Jie; Feng, Liping; Zeng, Wei; Liu, Zhengtang

2017-06-08

Metal/insertion-MoS 2 sandwich interfaces are designed to reduce the Schottky barriers at metal-MoS 2 interfaces. The effects of geometric and electronic structures of two-dimensional (2D) insertion materials on the contact properties of metal/insertion-MoS 2 interfaces are comparatively studied by first-principles calculations. Regardless of the geometric and electronic structures of 2D insertion materials, Fermi level pinning effects and charge scattering at the metal/insertion-MoS 2 interface are weakened due to weak interactions between the insertion and MoS 2 layers, no gap states and negligible structural deformations for MoS 2 layers. The Schottky barriers at metal/insertion-MoS 2 interfaces are induced by three interface dipoles and four potential steps that are determined by the charge transfers and structural deformations of 2D insertion materials. The lower the electron affinities of 2D insertion materials, the more are the electrons lost from the Sc surface, resulting in lower n-type Schottky barriers at Sc/insertion-MoS 2 interfaces. The larger the ionization potentials and the thinner the thicknesses of 2D insertion materials, the fewer are the electrons that accumulate at the Pt surface, leading to lower p-type Schottky barriers at Pt/insertion-MoS 2 interfaces. All Sc/insertion-MoS 2 interfaces exhibited ohmic characters. The Pt/BN-MoS 2 interface exhibits the lowest p-type Schottky barrier of 0.52 eV due to the largest ionization potential (∼6.88 eV) and the thinnest thickness (single atomic layer thickness) of BN. These results in this work are beneficial to understand and design high performance metal/insertion-MoS 2 interfaces through 2D insertion materials.

Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment.

PubMed

Kim, Kwangeun; Ryu, Jae Ha; Kim, Jisoo; Cho, Sang June; Liu, Dong; Park, Jeongpil; Lee, In-Kyu; Moody, Baxter; Zhou, Weidong; Albrecht, John; Ma, Zhenqiang

2017-05-24

Understanding the band bending at the interface of GaN/dielectric under different surface treatment conditions is critically important for device design, device performance, and device reliability. The effects of ultraviolet/ozone (UV/O 3 ) treatment of the GaN surface on the energy band bending of atomic-layer-deposition (ALD) Al 2 O 3 coated Ga-polar GaN were studied. The UV/O 3 treatment and post-ALD anneal can be used to effectively vary the band bending, the valence band offset, conduction band offset, and the interface dipole at the Al 2 O 3 /GaN interfaces. The UV/O 3 treatment increases the surface energy of the Ga-polar GaN, improves the uniformity of Al 2 O 3 deposition, and changes the amount of trapped charges in the ALD layer. The positively charged surface states formed by the UV/O 3 treatment-induced surface factors externally screen the effect of polarization charges in the GaN, in effect, determining the eventual energy band bending at the Al 2 O 3 /GaN interfaces. An optimal UV/O 3 treatment condition also exists for realizing the "best" interface conditions. The study of UV/O 3 treatment effect on the band alignments at the dielectric/III-nitride interfaces will be valuable for applications of transistors, light-emitting diodes, and photovoltaics.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe.

PubMed

Gurevich, A S; Kochereshko, V P; Bleuse, J; Mariette, H; Waag, A; Akimoto, R

2011-09-07

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

NASA Astrophysics Data System (ADS)

Gurevich, A. S.; Kochereshko, V. P.; Bleuse, J.; Mariette, H.; Waag, A.; Akimoto, R.

2011-09-01

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

Magnetic proximity effect at the interface between a cuprate superconductor and an oxide spin valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ovsyannikov, G. A., E-mail: gena@hitech.cplire.ru; Demidov, V. V.; Khaydukov, Yu. N.

2016-04-15

A heterostructure that consists of the YBa{sub 2}Cu{sub 3}O{sub 7–δ} cuprate superconductor and the SrRuO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} ruthenate/manganite spin valve is investigated using SQUID magnetometry, ferromagnetic resonance, and neutron reflectometry. It is shown that a magnetic moment is induced due to the magnetic proximity effect in the superconducting part of the heterostructure, while the magnetic moment in the composite ferromagnetic interlayer is suppressed. The magnetization emerging in the superconductor coincides in order of magnitude with the results of calculations taking into account the induced magnetic moment of Cu atoms because of orbital reconstruction at the interface between themore » superconductor and the ferromagnet, as well as with the results of the model taking into account the variations in the density of states at a distance on the order of the coherence length in the superconductor. The experimentally obtained characteristic penetration depth of the magnetic moment in the superconductor considerably exceeds the coherence length of the cuprate superconductor, which indicates the predominance of the mechanism of induced magnetic moment of Cu atoms.« less

Pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor.

PubMed

He, M Q; Shen, J Y; Petrović, A P; He, Q L; Liu, H C; Zheng, Y; Wong, C H; Chen, Q H; Wang, J N; Law, K T; Sou, I K; Lortz, R

2016-09-02

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3.

Pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor

PubMed Central

He, M. Q.; Shen, J. Y.; Petrović, A. P.; He, Q. L.; Liu, H. C.; Zheng, Y.; Wong, C. H.; Chen, Q. H.; Wang, J. N.; Law, K. T.; Sou, I. K.; Lortz, R.

2016-01-01

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3. PMID:27587000

Thermal Stir Welder

NASA Technical Reports Server (NTRS)

Ding, R. Jeffrey (Inventor)

2012-01-01

A welding apparatus is provided for forming a weld joint between first and second elements of a workpiece. The apparatus heats the first and second elements to form an interface of material in a plasticized or melted state interface between the elements. The interface material is then allowed to cool to a plasticized state if previously in a melted state. The interface material, while in the plasticized state, is then mixed, for example, using a grinding/extruding mixer, to remove any dendritic-type weld microstructures introduced into the interface material during heating.

Dynamics of the BH3-Only Protein Binding Interface of Bcl-xL.

PubMed

Liu, Xiaorong; Beugelsdijk, Alex; Chen, Jianhan

2015-09-01

The balance and interplay between pro-death and pro-survival members of the B-cell lymphoma-2 (Bcl-2) family proteins play key roles in regulation of the mitochondrial pathway of programmed cell death. Recent NMR and biochemical studies have revealed that binding of the proapoptotic BH3-only protein PUMA induces significant unfolding of antiapoptotic Bcl-xL at the interface, which in turn disrupts the Bcl-xL/p53 interaction to activate apoptosis. However, the molecular mechanism of such regulated unfolding of Bcl-xL is not fully understood. Analysis of the existing Protein Data Bank structures of Bcl-xL in both bound and unbound states reveal substantial intrinsic heterogeneity at its BH3-only protein binding interface. Large-scale atomistic simulations were performed in explicit solvent for six representative structures to further investigate the intrinsic conformational dynamics of Bcl-xL. The results support that the BH3-only protein binding interface of Bcl-xL is much more dynamic compared to the rest of the protein, both unbound and when bound to various BH3-only proteins. Such intrinsic interfacial conformational dynamics likely provides a physical basis that allows Bcl-xL to respond sensitively to detailed biophysical properties of the ligand. The ability of Bcl-xL to retain or even enhance dynamics at the interface in bound states could further facilitate the regulation of its interactions with various BH3-only proteins such as through posttranslational modifications. Copyright © 2015 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Operation of Kelvin Effect in the Activities of an Antifreeze Protein: A Molecular Dynamics Simulation Study.

PubMed

Midya, Uday Sankar; Bandyopadhyay, Sanjoy

2018-03-29

Ice growth and melting inhibition activities of antifreeze proteins (AFPs) are better explained by the adsorption-inhibition mechanism. Inhibition occurs as a result of the Kelvin effect induced by adsorbed protein molecules onto the surface of seed ice crystal. However, the Kelvin effect has not been explored by the state-of-the-art experimental techniques. In this work, atomistic molecular dynamics simulations have been carried out with Tenebrio molitor antifreeze protein ( TmAFP) placed at ice-water interface to probe the Kelvin effect in the mechanism of AFPs. Simulations show that, below equilibrium melting temperature, ice growth is inhibited through the convex ice-water interface formation toward the water phase and, above equilibrium melting temperature, ice melting is inhibited through the concave ice-water interface formation inward to ice phase. Simulations further reveal that the radius of curvature of the interface formed to stop the ice growth increases with decrease in the degree of supercooling. Our results are in qualitative agreement with the theoretical prediction of the Kelvin effect and thus reveal its operation in the activities of AFPs.

Designing an in-situ ultrasonic nondestructive evaluation system for ultrasonic additive manufacturing

NASA Astrophysics Data System (ADS)

Nadimpalli, Venkata K.; Nagy, Peter B.

2018-04-01

Ultrasonic Additive Manufacturing (UAM) is a solid-state layer by layer manufacturing process that utilizes vibration induced plastic deformation to form a metallurgical bond between a thin layer and an existing base structure. Due to the vibration based bonding mechanism, the quality of components at each layer depends on the geometry of the structure. In-situ monitoring during and between UAM manufacturing steps offers the potential for closed-loop control to optimize process parameters and to repair existing defects. One interface that is most prone to delamination is the base/build interface and often UAM component height and quality are limited by failure at the base/build interface. Low manufacturing temperatures and favorable orientation of typical interface defects in UAM make ultrasonic NDE an attractive candidate for online monitoring. Two approaches for in-situ NDE are discussed and the design of the monitoring system optimized so that the quality of UAM components is not affected by the addition of the NDE setup. Preliminary results from in-situ ultrasonic NDE indicate the potential to be utilized for online qualification, closed-loop control and offline certification of UAM components.

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei, E-mail: zwei@anl.gov; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-05-07

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. We measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. Using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. The relative strength of the effect is in agreementmore » with spectroscopic measurements and first principles calculations. We also vary the interlayer materials to study the voltage output in relation to the change of the effective spin mixing conductance. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

DTK C/Fortran Interface Development for NEAMS FSI Simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slattery, Stuart R.; Lebrun-Grandie, Damien T.

This report documents the development of DataTransferKit (DTK) C and Fortran interfaces for fluid-structure-interaction (FSI) simulations in NEAMS. In these simulations, the codes Nek5000 and Diablo are being coupled within the SHARP framework to study flow-induced vibration (FIV) in reactor steam generators. We will review the current Nek5000/Diablo coupling algorithm in SHARP and the current state of the solution transfer scheme used in this implementation. We will then present existing DTK algorithms which may be used instead to provide an improvement in both flexibility and scalability of the current SHARP implementation. We will show how these can be used withinmore » the current FSI scheme using a new set of interfaces to the algorithms developed by this work. These new interfaces currently expose the mesh-free solution transfer algorithms in DTK, a C++ library, and are written in C and Fortran to enable coupling of both Nek5000 and Diablo in their native Fortran language. They have been compiled and tested on Cooley, the test-bed machine for Mira at ALCF.« less

Interfacial Symmetry Control of Emergent Ferromagnetism

NASA Astrophysics Data System (ADS)

Grutter, Alexander; Borchers, Julie; Kirby, Brian; He, Chunyong; Arenholz, Elke; Vailionis, Arturas; Flint, Charles; Suzuki, Yuri

Atomically precise complex oxide heterostructures provide model systems for the discovery of new emergent phenomena since their magnetism, structure and electronic properties are strongly coupled. Octahedral tilts and rotations have been shown to alter the magnetic properties of complex oxide heterostructures, but typically induce small, gradual magnetic changes. Here, we demonstrate sharp switching between ferromagnetic and antiferromagnetic order at the emergent ferromagnetic interfaces of CaRuO3/CaMnO3 superlattices. Through synchrotron X-ray diffraction and neutron reflectometry, we show that octahedral distortions in superlattices with an odd number of CaMnO3 unit cells in each layer are symmetry mismatched across the interface. In this case, the rotation symmetry switches across the interface, reducing orbital overlap, suppressing charge transfer from Ru to Mn, and disrupting the interfacial double exchange. This disruption switches half of the interfaces from ferromagnetic to antiferromagnetic and lowers the saturation magnetic of the superlattice from 1.0 to 0.5 μB/interfacial Mn. By targeting a purely interfacial emergent magnetic system, we achieve drastic alterations to the magnetic ground state with extremely small changes in layer thickness.

Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

NASA Astrophysics Data System (ADS)

Buchanan, D. A.; Marwick, A. D.; Dimaria, D. J.; Dori, L.

1994-09-01

Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with N-15 nuclear reaction analysis and electrical methods. Internal photoemission and Fowler-Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (about 10(exp 15) atoms/sq cm) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from this layer was found to be retrapped near the Si/SiO2 interface for large electron fluences in the Al-gate samples. Within the limit of detectability, about 10(exp 14)/sq cm, no hydrogen was measured using nuclear reaction analysis in the polysilicon-gate samples. The buildup of hydrogen at the Si/SiO2 interface exhibits a threshold at about 1 MV/cm, consistent with the threshold for electron heating in SiO2. In the 'wet' SiO2 films with purposely introduced excess hydrogen, the rate of hydrogen buildup at the Si/SiO2 interface is found to be significantly greater than that found in the 'dry' films. During electron injection, hydrogen redistribution was also confirmed via the deactivation of boron dopant in the silicon substrate. The generation rates of interface states, neutral electron traps, and anomalous positive charge are found to increase with increasing hydrogen buildup in the substrate and the initial hydrogen concentration in the film. It is concluded that the generation of defects is preceded by the hot-electron-induced release and transport of atomic hydrogen and it is the chemical reaction of this species within the metal-oxide-semiconductor structure that generates the electrically active defects.

Effects of nonadditive interactions on ion solvation at the water/vapor interface: a molecular dynamics study.

PubMed

Yagasaki, Takuma; Saito, Shinji; Ohmine, Iwao

2010-12-09

The solvation of halide ions at the water/vapor interface is investigated by using molecular dynamics simulations with nonpolarizable molecular mechanical (MM), polarizable MM, and quantum mechanical (QM)/MM methods. The free energy profile of the ion solvation is decomposed into the energy and the entropic contributions along the ion displacement from inside to the surface of water. It is found that the surface affinity of the ion, relative to the bulk value, is determined by a subtle balance between the energetic destabilization and the entropic stabilization with the ion displacement. The amount of energetic destabilization is found to be reduced when nonadditive interactions are included, as in the polarizable MM and QM/MM models. The structure of water around the ion at the interface is also largely modified when the higher order effects are considered. For example, the induced dipole effect enhances the solvation structure around the ion at the interface significantly and thus reduces the amount of entropic stabilization at the interface, relative to in the bulk. It is found that this induced dipole effect causes the slowing in the ion-water hydrogen bond dynamics at the interface. On the other hand, the higher order induced multipole effects in the QM/MM method suppress both the excessive enhancement of the solvation structure and the slowing of the ion-water hydrogen bond dynamics at the interface. The present study demonstrates that not only the induced dipole moment but also the higher order induced multipole moments, which are neglected in standard empirical models, are essential for the correct description of the ion solvation at the water/vapor interface.

A brain-machine interface for control of medically-induced coma.

PubMed

Shanechi, Maryam M; Chemali, Jessica J; Liberman, Max; Solt, Ken; Brown, Emery N

2013-10-01

Medically-induced coma is a drug-induced state of profound brain inactivation and unconsciousness used to treat refractory intracranial hypertension and to manage treatment-resistant epilepsy. The state of coma is achieved by continually monitoring the patient's brain activity with an electroencephalogram (EEG) and manually titrating the anesthetic infusion rate to maintain a specified level of burst suppression, an EEG marker of profound brain inactivation in which bursts of electrical activity alternate with periods of quiescence or suppression. The medical coma is often required for several days. A more rational approach would be to implement a brain-machine interface (BMI) that monitors the EEG and adjusts the anesthetic infusion rate in real time to maintain the specified target level of burst suppression. We used a stochastic control framework to develop a BMI to control medically-induced coma in a rodent model. The BMI controlled an EEG-guided closed-loop infusion of the anesthetic propofol to maintain precisely specified dynamic target levels of burst suppression. We used as the control signal the burst suppression probability (BSP), the brain's instantaneous probability of being in the suppressed state. We characterized the EEG response to propofol using a two-dimensional linear compartment model and estimated the model parameters specific to each animal prior to initiating control. We derived a recursive Bayesian binary filter algorithm to compute the BSP from the EEG and controllers using a linear-quadratic-regulator and a model-predictive control strategy. Both controllers used the estimated BSP as feedback. The BMI accurately controlled burst suppression in individual rodents across dynamic target trajectories, and enabled prompt transitions between target levels while avoiding both undershoot and overshoot. The median performance error for the BMI was 3.6%, the median bias was -1.4% and the overall posterior probability of reliable control was 1 (95% Bayesian credibility interval of [0.87, 1.0]). A BMI can maintain reliable and accurate real-time control of medically-induced coma in a rodent model suggesting this strategy could be applied in patient care.

Odd-frequency pairing in superconducting heterostructures .

NASA Astrophysics Data System (ADS)

Golubov, A. A.; Tanaka, Y.; Yokoyama, T.; Asano, Y.

2007-03-01

We present a general theory of the proximity effect in junctions between unconventional superconductors and diffusive normal metals (DN) or ferromagnets (DF). We consider all possible symmetry classes in a superconductor allowed by the Pauli principle: even-frequency spin-singlet even-parity state, even-frequency spin-triplet odd-parity state, odd-frequency spin-triplet even-parity state and odd-frequency spin-singlet odd-parity state. For each of the above states, symmetry and spectral properties of the induced pair amplitude in the DN (DF) are determined. The cases of junctions with spin-singlet s- and d-wave superconductors and spin-triplet p-wave superconductors are adressed in detail. We discuss the interplay between the proximity effect and midgap Andreev bound states arising at interfaces in unconventional (d- or p-wave) junctions. The most striking property is the odd-frequency symmetry of the pairing amplitude induced in DN (DF) in contacts with p-wave superconductors. This leads to zero-energy singularity in the density of states and to anomalous screening of an external magnetic field. Peculiarities of Josephson effect in d- or p-wave junctions are discussed. Experiments are suggested to detect an order parameter symmetry using heterostructures with unconventional superconductors.

Slippery interfaces: lubrication of director and helix rotation motions (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yamamoto, Jun; Sakatsuji, Waki; Nishiyama, Isa

2017-02-01

Anchoring effects on the polymer films in the liquid crystal (LC) display devices plays key role to create the restoring force to the black state. However, the chiral materials with spontaneous helix, such as deformed helix mode in SmC* (DH-FLC) or the polymer stabilized blue phase (PSChBP), can recover black state by rewinding motion of the helix itself. We have invented the principle and design of slippery interfaces, which has zero anchoring force for attached LC molecules on the interfaces, and confirmed the drastic reduction of driving voltage in DH-FLC mode of SmC* (<1 order) keeping the fast switching response (tau 50 micro sec). We have reported the lateral slippery interfaces consist of the phase separated liquid phases created by tran-cis isomerization of doped azo dye. It is not enough to the complete transmission of the light(I/I0 1) by applying the typical driving voltage ( 1.0V/micro m) for current IPS panels. It is also problem that slippery interface become effective only just below the I-SmC phase transition temperature (TIC-T<20°). Here, we report new type of the vertical slippery interface realized by the spin coated swollen azo-LC gel films on the glass substrates. Under UV irradiation, trans-cis isomerization of the azo-dye co-polymerized in the azo-LC gel film, induces the vertical slippery interfaces by the disordering effect. Since the co-polymerized azo-dye cannot be dissolved into LC, the disordering effect is completely localized in the interface between swollen azo-LC gel and bulk SmC* material. Then the slippery interfaces can be stabilized over wide temperature range. We greatly improve the reduction of the driving voltage, I/Io=1, 1.0V/micro m for rather slow change of the driving voltage (tau 1msec 2.5msec pulse), I/I0=0.6, 1.5V/micro m for fast change (tau 50 micro sec, 250 micro sec pulse) by lubrication of intra and inter helix C-director rotation motions.

Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

NASA Astrophysics Data System (ADS)

Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

2018-03-01

Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

Reduced Charge Transfer Exciton Recombination in Organic Semiconductor Heterojunctions by Molecular Doping

NASA Astrophysics Data System (ADS)

Deschler, Felix; da Como, Enrico; Limmer, Thomas; Tautz, Raphael; Godde, Tillmann; Bayer, Manfred; von Hauff, Elizabeth; Yilmaz, Seyfullah; Allard, Sybille; Scherf, Ullrich; Feldmann, Jochen

2011-09-01

We investigate the effect of molecular doping on the recombination of electrons and holes localized at conjugated-polymer-fullerene interfaces. We demonstrate that a low concentration of p-type dopant molecules (<4% weight) reduces the interfacial recombination via charge transfer excitons and results in a favored formation of separated carriers. This is observed by the ultrafast quenching of photoluminescence from charge transfer excitons and the increase in photoinduced polaron density by ˜70%. The results are consistent with a reduced formation of emissive charge transfer excitons, induced by state filling of tail states.

A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.

PubMed

Raza, Syed Raza Ali; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

2013-11-21

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

PubMed

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

2015-06-11

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

PubMed Central

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J.; Pfeiffer, Loren N.; West, Ken W.; Rokhinson, Leonid P.

2015-01-01

Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields. PMID:26067452

Thermal stir welding process

NASA Technical Reports Server (NTRS)

Ding, R. Jeffrey (Inventor)

2012-01-01

A welding method is provided for forming a weld joint between first and second elements of a workpiece. The method includes heating the first and second elements to form an interface of material in a plasticized or melted state interface between the elements. The interface material is then allowed to cool to a plasticized state if previously in a melted state. The interface material, while in the plasticized state, is then mixed, for example, using a grinding/extruding process, to remove any dendritic-type weld microstructures introduced into the interface material during the heating process.

Thermal stir welding apparatus

NASA Technical Reports Server (NTRS)

Ding, R. Jeffrey (Inventor)

2011-01-01

A welding method and apparatus are provided for forming a weld joint between first and second elements of a workpiece. The method includes heating the first and second elements to form an interface of material in a plasticized or melted state interface between the elements. The interface material is then allowed to cool to a plasticized state if previously in a melted state. The interface material, while in the plasticized state, is then mixed, for example, using a grinding/extruding process, to remove any dendritic-type weld microstructures introduced into the interface material during the heating process.

Edge states at the interface of non-Hermitian systems

NASA Astrophysics Data System (ADS)

Yuce, C.

2018-04-01

Topological edge states appear at the interface of two topologically distinct Hermitian insulators. We study the extension of this idea to non-Hermitian systems. We consider P T -symmetric and topologically distinct non-Hermitian insulators with real spectra and study topological edge states at the interface of them. We show that P T symmetry is spontaneously broken at the interface during the topological phase transition. Therefore, topological edge states with complex energy eigenvalues appear at the interface. We apply our idea to a complex extension of the Su-Schrieffer-Heeger model.

Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface

NASA Astrophysics Data System (ADS)

Okada, Tatsuya; Tomita, Takuro; Ueki, Tomoyuki; Hashimoto, Takuya; Kawakami, Hiroki; Fuchikami, Yuki; Hisazawa, Hiromu; Tanaka, Yasuhiro

2018-01-01

We investigated low-temperature diffusion at the Ni/SiC interface with the assistance of femtosecond laser-induced modifications. Cross sections of the laser-irradiated lines of two different pulse energies — 0.84 and 0.60 J/cm2 in laser fluence — were compared before and after annealing at 673 K. At the laser fluence of 0.60 J/cm2, a single flat Ni-based particle was formed at the interface after annealing. The SiC crystal under the particle was defect-free. The present results suggest the potential application of femtosecond laser-induced modifications to the low-temperature fabrication of contacts at the interface without introducing crystal defects, e.g., dislocations and stacking faults, in SiC.

Vortex properties of two-dimensional superconducting Pb films.

PubMed

Ning, Y X; Song, C L; Wang, Y L; Chen, Xi; Jia, J F; Xue, Q K; Ma, X C

2010-02-17

Using low temperature scanning tunnelling microscopy/spectroscopy (STM/STS) we have investigated the vortex behaviours of two-dimensional superconducting Pb films at different thicknesses. STS at the vortex core shows an evolution of electronic states with film thickness. Transition from the clean limit to the dirty limit of superconductivity is identified, which can be ascribed to the decreased electronic mean free path induced by stronger scattering from the disordered interface at smaller thicknesses. A magnetic field dependent vortex core size is observed even for such a low- κ superconductor. The weak pinning induced by surface defects leads to the formation of a distorted hexagonal vortex lattice.

Correlation between superconductivity, band filling, and electron confinement at the LaAlO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Smink, A. E. M.; Stehno, M. P.; de Boer, J. C.; Brinkman, A.; van der Wiel, W. G.; Hilgenkamp, H.

2018-06-01

By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO3/SrTiO3 interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate dependence of Tc to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum Tc to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrödinger-Poisson calculations relate this kink to a Lifshitz transition of the second dx y subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO3 surface states, and establish gating as a means to control the relative energy of these states.

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction.

PubMed

Hsu, Hsun-Feng; Huang, Wan-Ru; Chen, Ting-Hsuan; Wu, Hwang-Yuan; Chen, Chun-An

2013-05-10

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation.

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

PubMed Central

2013-01-01

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

Noncontact evaluation for interface states by photocarrier counting

NASA Astrophysics Data System (ADS)

Furuta, Masaaki; Shimizu, Kojiro; Maeta, Takahiro; Miyashita, Moriya; Izunome, Koji; Kubota, Hiroshi

2018-03-01

We have developed a noncontact measurement method that enables in-line measurement and does not have any test element group (TEG) formation. In this method, the number of photocarriers excited from the interface states are counted which is called “photocarrier counting”, and then the energy distribution of the interface states density (D it) is evaluated by spectral light excitation. In our previous experiment, the method used was a preliminary contact measurement method at the oxide on top of the Si wafer. We developed, at this time, a D it measurement method as a noncontact measurement with a gap between the probes and the wafer. The shallow trench isolation (STI) sidewall has more localized interface states than the region under the gate electrode. We demonstrate the noncontact measurement of trapped carriers from interface states using wafers of three different crystal plane orientations. The demonstration will pave the way for evaluating STI sidewall interface states in future studies.

An analysis of fiber-matrix interface failure stresses for a range of ply stress states

NASA Technical Reports Server (NTRS)

Crews, J. H.; Naik, R. A.; Lubowinski, S. J.

1993-01-01

A graphite/bismaleimide laminate was prepared without the usual fiber treatment and was tested over a wide range of stress states to measure its ply cracking strength. These tests were conducted using off-axis flexure specimens and produced fiber-matrix interface failure data over a correspondingly wide range of interface stress states. The absence of fiber treatment, weakened the fiber-matrix interfaces and allowed these tests to be conducted at load levels that did not yield the matrix. An elastic micromechanics computer code was used to calculate the fiber-matrix interface stresses at failure. Two different fiber-array models (square and diamond) were used in these calculations to analyze the effects of fiber arrangement as well as stress state on the critical interface stresses at failure. This study showed that both fiber-array models were needed to analyze interface stresses over the range of stress states. A linear equation provided a close fit to these critical stress combinations and, thereby, provided a fiber-matrix interface failure criterion. These results suggest that prediction procedures for laminate ply cracking can be based on micromechanics stress analyses and appropriate fiber-matrix interface failure criteria. However, typical structural laminates may require elastoplastic stress analysis procedures that account for matrix yielding, especially for shear-dominated ply stress states.

The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

NASA Technical Reports Server (NTRS)

Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1983-01-01

The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.

Mechanical stretch increases CCN2/CTGF expression in anterior cruciate ligament-derived cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyake, Yoshiaki; Department of Biochemistry and Molecular Dentistry, Okayama University Graduate School of Medicine, Dentistry, and Pharmaceutical Sciences, 2-5-1 Shikata-cho, Kita-ku, Okayama; Furumatsu, Takayuki, E-mail: matino@md.okayama-u.ac.jp

Highlights: {yields} CCN2/CTGF localizes to the ligament-to-bone interface, but is not to the midsubstance region of human anterior cruciate ligament (ACL). {yields} Mechanical stretch induces higher increase of CCN2/CTGF gene expression and protein secretion in ACL interface cells compared with ACL midsubstance cells. {yields} CCN2/CTGF treatment stimulates the proliferation of ACL interface cells. -- Abstract: Anterior cruciate ligament (ACL)-to-bone interface serves to minimize the stress concentrations that would arise between two different tissues. Mechanical stretch plays an important role in maintaining cell-specific features by inducing CCN family 2/connective tissue growth factor (CCN2/CTGF). We previously reported that cyclic tensile strain (CTS)more » stimulates {alpha}1(I) collagen (COL1A1) expression in human ACL-derived cells. However, the biological function and stress-related response of CCN2/CTGF were still unclear in ACL fibroblasts. In the present study, CCN2/CTGF was observed in ACL-to-bone interface, but was not in the midsubstance region by immunohistochemical analyses. CTS treatments induced higher increase of CCN2/CTGF expression and secretion in interface cells compared with midsubstance cells. COL1A1 expression was not influenced by CCN2/CTGF treatment in interface cells despite CCN2/CTGF stimulated COL1A1 expression in midsubstance cells. However, CCN2/CTGF stimulated the proliferation of interface cells. Our results suggest that distinct biological function of stretch-induced CCN2/CTGF might regulate region-specific phenotypes of ACL-derived cells.« less

Electronic properties of MoS2 / MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

DOE PAGES

Santosh, K. C.; Longo, Roberto; Addou, Rafik; ...

2016-09-26

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS 2/MoO 3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO 3 and the relative band alignment with MoS 2, together with small energy gap, the MoS 2/MoO 3 interface is a goodmore » candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO 3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS 2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS 2 and MoO x (x < 3) interface, which consistently explains the available experimental observations.« less

Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

PubMed Central

K. C., Santosh; Longo, Roberto C.; Addou, Rafik; Wallace, Robert M.; Cho, Kyeongjae

2016-01-01

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations. PMID:27666523

Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors

NASA Astrophysics Data System (ADS)

Kao, Wei-Chieh

Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.

Strain induced atomic structure at the Ir-doped LaAlO3/SrTiO3 interface.

PubMed

Lee, M; Arras, R; Warot-Fonrose, B; Hungria, T; Lippmaa, M; Daimon, H; Casanove, M J

2017-11-01

The structure of Ir-doped LaAlO 3 /SrTiO 3 (001) interfaces was investigated on the atomic scale using probe-corrected transmission electron microscopy in high-angle annular dark-field scanning mode (HAADF-STEM) and electron energy loss spectroscopy (EELS), combined with first-principles calculations. We report the evolution of the strain state experimentally measured in a 5 unit-cell thick LaAlO 3 film as a function of the Ir concentration in the topmost SrTiO 3 layer. It is shown that the LaAlO 3 layers remain fully elastically strained up to 3% of Ir doping, whereas a higher doping level seems to promote strain relaxation through enhanced cationic interdiffusion. The observed differences between the energy loss near edge structure (ELNES) of Ti-L 2,3 and O-K edges at non-doped and Ir-doped interfaces are consistent with the location of the Ir dopants at the interface, up to 3% of Ir doping. These findings, supported by the results of density functional theory (DFT) calculations, provide strong evidence that the effect of dopant concentrations on the properties of this kind of interface should not be analyzed without obtaining essential information from the fine structural and chemical analysis of the grown structures.

Vibration-Induced Gas-Liquid Interface Breakup

NASA Astrophysics Data System (ADS)

O'Hern, Timothy; Torczynski, John; Romero, Ed; Shelden, Bion

2010-11-01

Gas-liquid interfaces can be forced to break up when subjected to vibrations within critical ranges of frequency and amplitude. This breakup mechanism was examined experimentally using deep layers of silicone oils over a range of viscosity and sinusoidal, primarily axial vibration conditions that can produce dramatic disturbances at the gas-liquid free surface. Although small-amplitude vibrations produce standing Faraday waves, large-amplitude vibrations produce liquid jets into the gas, droplets pinching off from the jets, gas cavities in the liquid from droplet impact, and bubble transport below the interface. Experiments used several different silicone oils over a range of pressures and vibration conditions. Computational simulations exhibiting similar behavior will be included in the presentation. Applications include liquid fuel rockets, inertial sensing devices, moving vehicles, mixing processes, and acoustic excitation. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping

DOE PAGES

Bruno, F. Y.; Grisolia, M. N.; Visani, C.; ...

2015-02-17

At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO 3 (LFO) and ferromagnetic La 0.7Sr 0.3MnO 3 (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show thatmore » the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.« less

Interface electronic structures of reversible double-docking self-assembled monolayers on an Au(111) surface

PubMed Central

Zhang, Tian; Ma, Zhongyun; Wang, Linjun; Xi, Jinyang; Shuai, Zhigang

2014-01-01

Double-docking self-assembled monolayers (DDSAMs), namely self-assembled monolayers (SAMs) formed by molecules possessing two docking groups, provide great flexibility to tune the work function of metal electrodes and the tunnelling barrier between metal electrodes and the SAMs, and thus offer promising applications in both organic and molecular electronics. Based on the dispersion-corrected density functional theory (DFT) in comparison with conventional DFT, we carry out a systematic investigation on the dual configurations of a series of DDSAMs on an Au(111) surface. Through analysing the interface electronic structures, we obtain the relationship between single molecular properties and the SAM-induced work-function modification as well as the level alignment between the metal Fermi level and molecular frontier states. The two possible conformations of one type of DDSAM on a metal surface reveal a strong difference in the work-function modification and the electron/hole tunnelling barriers. Fermi-level pinning is found to be a key factor to understand the interface electronic properties. PMID:24615153

Electron beam induced strong organic/inorganic grafting for thermally stable lithium-ion battery separators

NASA Astrophysics Data System (ADS)

Choi, Yunah; Kim, Jin Il; Moon, Jungjin; Jeong, Jongyeob; Park, Jong Hyeok

2018-06-01

A tailored interface between organic and inorganic materials is of great importance to maximize the synergistic effects from hybridization. Polyethylene separators over-coated with inorganic thin films are the state-of-the art technology for preparing various secondary batteries with high safety. Unfortunately, the organic/inorganic hybrid separators have the drawback of a non-ideal interface, thus causing poor thermal/dimensional stability. Here, we report a straightforward method to resolve the drawback of the non-ideal interface between vapor deposited SiO2 and polyethylene separators, to produce a highly stable lithium-ion battery separator through strong chemical linking generated by direct electron beam irradiation. The simple treatment with an electron beam with an optimized dose generates thermally stable polymer separators, which may enhance battery safety under high-temperature conditions. Additionally, the newly formed Si-O-C or Si-CH3 chemical bonding enhances electrolyte-separator compatibility and thus may provide a better environment for ionic transport between the cathode and anode, thereby leading to better charge/discharge behaviors.

Amplitude-dependent topological edge states in nonlinear phononic lattices

NASA Astrophysics Data System (ADS)

Pal, Raj Kumar; Vila, Javier; Leamy, Michael; Ruzzene, Massimo

2018-03-01

This work investigates the effect of nonlinearities on topologically protected edge states in one- and two-dimensional phononic lattices. We first show that localized modes arise at the interface between two spring-mass chains that are inverted copies of each other. Explicit expressions derived for the frequencies of the localized modes guide the study of the effect of cubic nonlinearities on the resonant characteristics of the interface, which are shown to be described by a Duffing-like equation. Nonlinearities produce amplitude-dependent frequency shifts, which in the case of a softening nonlinearity cause the localized mode to migrate to the bulk spectrum. The case of a hexagonal lattice implementing a phononic analog of a crystal exhibiting the quantum spin Hall effect is also investigated in the presence of weakly nonlinear cubic springs. An asymptotic analysis provides estimates of the amplitude dependence of the localized modes, while numerical simulations illustrate how the lattice response transitions from bulk-to-edge mode-dominated by varying the excitation amplitude. In contrast with the interface mode of the first example studies, this occurs both for hardening and softening springs. The results of this study provide a theoretical framework for the investigation of nonlinear effects that induce and control topologically protected wave modes through nonlinear interactions and amplitude tuning.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Effects of lengthscales and attractions on the collapse of hydrophobic polymers in water

PubMed Central

Athawale, Manoj V.; Goel, Gaurav; Ghosh, Tuhin; Truskett, Thomas M.; Garde, Shekhar

2007-01-01

We present results from extensive molecular dynamics simulations of collapse transitions of hydrophobic polymers in explicit water focused on understanding effects of lengthscale of the hydrophobic surface and of attractive interactions on folding. Hydrophobic polymers display parabolic, protein-like, temperature-dependent free energy of unfolding. Folded states of small attractive polymers are marginally stable at 300 K and can be unfolded by heating or cooling. Increasing the lengthscale or decreasing the polymer–water attractions stabilizes folded states significantly, the former dominated by the hydration contribution. That hydration contribution can be described by the surface tension model, ΔG = γ(T)ΔA, where the surface tension, γ, is lengthscale-dependent and decreases monotonically with temperature. The resulting variation of the hydration entropy with polymer lengthscale is consistent with theoretical predictions of Huang and Chandler [Huang DM, Chandler D (2000) Proc Natl Acad Sci USA 97:8324–8327] that explain the blurring of entropy convergence observed in protein folding thermodynamics. Analysis of water structure shows that the polymer–water hydrophobic interface is soft and weakly dewetted, and is characterized by enhanced interfacial density fluctuations. Formation of this interface, which induces polymer folding, is strongly opposed by enthalpy and favored by entropy, similar to the vapor–liquid interface. PMID:17215352

Organic-inorganic interface-induced multi-fluorescence of MgO nanocrystal clusters and their applications in cellular imaging.

PubMed

Xie, Shuifen; Bao, Shixiong; Ouyang, Junjie; Zhou, Xi; Kuang, Qin; Xie, Zhaoxiong; Zheng, Lansun

2014-04-25

Surface functionalization of inorganic nanomaterials through chemical binding of organic ligands on the surface unsaturated atoms, forming unique organic-inorganic interfaces, is a powerful approach for creating special functions for inorganic nanomaterials. Herein, we report the synthesis of hierarchical MgO nanocrystal clusters (NCs) with an organic-inorganic interface induced multi-fluorescence and their application as new alternative labels for cellular imaging. The synthetic method was established by a dissolution and regrowth process with the assistance of carboxylic acid, in which the as-prepared MgO NCs were modified with carboxylic groups at the coordinatively unsaturated atoms of the surface. By introducing acetic acid to partially replace oleic acid in the reaction, the optical absorption of the produced MgO NCs was progressively engineered from the UV to the visible region. Importantly, with wider and continuous absorption profile, those MgO NCs presented bright and tunable multicolor emissions from blue-violet to green and yellow, with the highest absolute quantum yield up to (33±1) %. The overlap for the energy levels of the inorganic-organic interface and low-coordinated states stimulated a unique fluorescence resonance energy transfer phenomenon. Considering the potential application in cellular imaging, such multi-fluorescent MgO NCs were further encapsulated with a silica shell to improve the water solubility and stability. As expected, the as-formed MgO@SiO2 NCs possessed great biocompatibility and high performance in cellular imaging. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

NASA Astrophysics Data System (ADS)

Wu, Kongping; Liao, Meiyong; Sang, Liwen; Liu, Jiangwei; Imura, Masataka; Ye, Haitao; Koide, Yasuo

2018-04-01

Tailoring the electronic states of the dielectric oxide/diamond interface is critical to the development of next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate the electronic states of the TiO2/diamond 2 × 1-(100) interface by using first principles total energy calculations. Based on the calculation of the chemical potentials for the TiO2/diamond interface, it is observed that the hetero-interfaces with the C-OTi configuration or with two O vacancies are the most energetically favorable structures under the O-rich condition and under Ti-rich condition, respectively. The band structure and density of states of both TiO2/diamond and TiO2/H-diamond hetero-structures are calculated. It is revealed that there are considerable interface states at the interface of the anatase TiO2/diamond hetero-structure. By introducing H on the diamond surface, the interface states are significantly suppressed. A type-II alignment band structure is disclosed at the interface of the TiO2/diamond hetero-structure. The valence band offset increases from 0.6 to 1.7 eV when H is introduced at the TiO2/diamond interface.

All-Manganite Tunnel Junctions with Interface-Induced Barrier Magnetism

NASA Astrophysics Data System (ADS)

Sefrioui, Zouhair

2011-03-01

The recent discovery of several unexpected phases at complex oxide interfaces is providing new insights into the physics of strongly correlated electron systems. The possibility of tailoring the electronic structure of such interfaces has triggered a great technological drive to functionalize them into devices. In this communication, we describe an alternative strategy to produce spin filtering by inducing a ferromagnetic insulating state in an ultrathin antiferromagnetic layer in contact with a ferromagnetic layer. This artificially induced spin filtering persists up to relatively high temperatures and operates at high applied bias voltages. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets. Work done in collaboration with M. Bibes, C. Carrétéro, A. Barthélémy (Unité Mixte de Physique CNRS/Thales, Campus de Polytechnique, 1, Avenue A. Fresnel, 91767 Palaiseau (France) and Université Paris-Sud, 91045 Orsay (France)), F.A. Cuellar, C. Visani, A. Rivera-Calzada, , C. León, J. Santamaria (Grupo de Física de Materiales Complejos, Universidad Complutense de Madrid, 28040 Madrid (Spain)), M.J. Calderón, L. Brey (Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid (Spain)), K. March, M. Walls, D. Imhoff (Laboratoire de Physique des Solides, CNRS, Université Paris-Sud, 91405 Orsay (France)), R. Lopez Anton, T.R. Charlton (ISIS, Rutherford Appleton Laboratory, Chilton, Oxon OX11 0QX (United Kingdom)), E. Iborra (Universidad Politécnica de Madrid, Escuela Técnica Superior de Ingenieros de Telecomunicaciones, 28040 Madrid (Spain)), F. Ott (Léon Brillouin, CEA/CNRS, UMR 12, 91191 Gif-sur-Yvette (France)). This work was supported by the Spanish Ministry for Science and Education programs MAT2008 06517, and the Réseau Thématique de Recherche Avancée (RTRA) ``Triangle de la Physique.''

First-Principles Molecular Dynamics Study on the Electric-double layer Capacitance of Water-MXene interfaces

NASA Astrophysics Data System (ADS)

Ando, Yasunobu; Otani, Minoru

MXenes are a new, large family of layered materials synthesized from MAX phases by simple chemical treatments. Due to their enormous variations, MXenes have attracted great attention as promising candidates as anode materials for next-generation secondary batteries. Unfortunately, the specific capacitance of MXenes supercapacitors is lower than that of active-carbon ones. Theoretical investigation of the electric-double layer (EDL) at electrode interfaces is necessary to improve their capacitance. First-principles molecular dynamics (FPMD) simulation based on the density functional theory (DFT) is performed to estimate the EDL capacitance from a potential profile V(z) and a charge distribution q(z) induced by the ions at water-Ti2CTx (T =O, F) interfaces. Potential profiles V(z) of both Ti2CO2 and Ti2CF2 decrease about 1.0 eV steeply in a region of only 3 Å from a Ti layer, which is the same profile at the platinum interfaces. On the other hand, induced charge distribution q(z) depends on the species of surface termination. Induced electrons are introduced at Ti layers in the case of O surface termination. However, Ti2CF2 is not capable to store electrons at Ti layers because it is mono-valence anions. It indicates that effective surface-position of MXenes depends on the surface terminations. Our results are revealed that small induced charge leads the low EDL capacitance at MXene interfaces. This is because interface polarization due to strong interaction between water and Ti2CTx induces net charge. The surface net charge hinders the introduction of ion-induced charges.

McStas event logger: Definition and applications

NASA Astrophysics Data System (ADS)

Bergbäck Knudsen, Erik; Bryndt Klinkby, Esben; Kjær Willendrup, Peter

2014-02-01

Functionality is added to the McStas neutron ray-tracing code, which allows individual neutron states before and after a scattering to be temporarily stored, and analysed. This logging mechanism has multiple uses, including studies of longitudinal intensity loss in neutron guides and guide coating design optimisations. Furthermore, the logging method enables the cold/thermal neutron induced gamma background along the guide to be calculated from the un-reflected neutron, using a recently developed MCNPX-McStas interface.

Conformational epitopes at cadherin calcium-binding sites and p120-catenin phosphorylation regulate cell adhesion

PubMed Central

Petrova, Yuliya I.; Spano, MarthaJoy M.; Gumbiner, Barry M.

2012-01-01

We investigated changes in cadherin structure at the cell surface that regulate its adhesive activity. Colo 205 cells are nonadhesive cells with a full but inactive complement of E-cadherin–catenin complexes at the cell surface, but they can be triggered to adhere and form monolayers. We were able to distinguish the inactive and active states of E-cadherin at the cell surface by using a special set of monoclonal antibodies (mAbs). Another set of mAbs binds E-cadherin and strongly activates adhesion. In other epithelial cell types these activating mAbs inhibit growth factor–induced down-regulation of adhesion and epithelial morphogenesis, indicating that these phenomena are also controlled by E-cadherin activity at the cell surface. Both types of mAbs recognize conformational epitopes at different interfaces between extracellular cadherin repeat domains (ECs), especially near calcium-binding sites. Activation also induces p120-catenin dephosphorylation, as well as changes in the cadherin cytoplasmic domain. Moreover, phospho-site mutations indicate that dephosphorylation of specific Ser/Thr residues in the N-terminal domain of p120-catenin mediate adhesion activation. Thus physiological regulation of the adhesive state of E-cadherin involves physical and/or conformational changes in the EC interface regions of the ectodomain at the cell surface that are mediated by catenin-associated changes across the membrane. PMID:22513089

Numerical Solution of Moving Phase Boundary and Diffusion-Induced Stress of Sn Anode in the Lithium-Ion Battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Chun-Hao; Chason, Eric; Guduru, Pradeep R.

Here, we have previously observed a large transient stress in Sn film anodes at the beginning of the Sn-Li 2Sn 5 phase transformation. To understand this behavior, we use numerical modeling to simulate the kinetics of the 1-D moving boundary and Li diffusion in the Sn anodes. A mixture of diffusion-controlled and interface-controlled kinetics is found. The Li concentration in the Li 2Sn 5 phase remains near a steady-state profile as the phase boundary propagates, whereas the Li diffusion in Sn is more complicated. Li continuously diffuses into the Sn layer and produces a supersaturation; the Li can then diffusemore » toward the Sn/Li 2Sn 5 interface and contribute to further phase transformation. Finally, the evolution of Li concentration in the Sn induces strain which involves rate-dependent plasticity and elastic unloading, resulting in the complex stress evolution that is observed. In the long term, the measured stress is dominated by the stress in the growing Li 2Sn 5 phase.« less

Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

NASA Astrophysics Data System (ADS)

Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2017-02-01

By using electric-field-induced optical second harmonic generation (EFISHG) measurement and charge modulation spectroscopy (CMS), we studied carrier behavior and polarization reversal in ITO/ poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE))/pentacene/Au diodes with a ferroelectric P(VDF-TrFE) layer in terms of carrier energetics. The current-voltage (I-V) characteristics of the diodes showed three-step polarization reversal in the dark. However, the I-V was totally different under illumination and exhibited two-step behavior. EFISHG probed the internal electric field in the pentacene layer and accounted for the polarization reversal change due to charge accumulation at the pentacene/P(VDF-TrFE) interface. CMS probed the related carrier energetics and indicated that exciton dissociation in pentacene molecular states governed carrier accumulation at the pentacene/ferroelectric interface, leading to different polarization reversal processes in the dark and under light illumination. Combining EFISHG measurement and CMS provides us a way to study carrier energetics that govern polarization reversal in ferroelectric P(VDF-TrFE)/pentacene diodes.

Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondarenko, Anton; Vyvenko, Oleg

2014-02-21

Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of trapsmore » refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.« less

Numerical Solution of Moving Phase Boundary and Diffusion-Induced Stress of Sn Anode in the Lithium-Ion Battery

DOE PAGES

Chen, Chun-Hao; Chason, Eric; Guduru, Pradeep R.

2017-08-02

Here, we have previously observed a large transient stress in Sn film anodes at the beginning of the Sn-Li 2Sn 5 phase transformation. To understand this behavior, we use numerical modeling to simulate the kinetics of the 1-D moving boundary and Li diffusion in the Sn anodes. A mixture of diffusion-controlled and interface-controlled kinetics is found. The Li concentration in the Li 2Sn 5 phase remains near a steady-state profile as the phase boundary propagates, whereas the Li diffusion in Sn is more complicated. Li continuously diffuses into the Sn layer and produces a supersaturation; the Li can then diffusemore » toward the Sn/Li 2Sn 5 interface and contribute to further phase transformation. Finally, the evolution of Li concentration in the Sn induces strain which involves rate-dependent plasticity and elastic unloading, resulting in the complex stress evolution that is observed. In the long term, the measured stress is dominated by the stress in the growing Li 2Sn 5 phase.« less

Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Z. Q.; Chim, W. K.; Chiam, S. Y

2011-11-01

In this work, photoelectron spectroscopy is used to characterize the band alignment of lanthanum aluminate heterostructures which possess a wide range of potential applications. It is found that our experimental slope parameter agrees with theory using the metal-induced gap states model while the interface induced gap states (IFIGS) model yields unsatisfactory results. We show that this discrepancy can be attributed to the correlation between the dielectric work function and the electronegativity in the IFIGS model. It is found that the original trend, as established largely by metals, may not be accurate for larger band gap materials. By using a newmore » correlation, our experimental data shows good agreement of the slope parameter using the IFIGS model. This correlation, therefore, plays a crucial role in heterostructures involving wider bandgap materials for accurate band alignment prediction using the IFIGS model.« less

Induced spin-polarization of EuS at room temperature in Ni/EuS multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poulopoulos, P., E-mail: poulop@upatras.gr; Materials Science Department, University of Patras, 26504 Patras; Goschew, A.

2014-03-17

Ni/EuS multilayers with excellent multilayer sequencing are deposited via e-beam evaporation on the native oxide of Si(100) wafers at 4 × 10{sup −9} millibars. The samples have very small surface and interface roughness and show sharp interfaces. Ni layers are nanocrystalline 4–8 nm thick and EuS layers are 2–4 nm thick and are either amorphous or nanocrystalline. Unlike for Co/EuS multilayers, all Eu ions are in divalent (ferromagnetic) state. We show a direct antiferromagnetic coupling between EuS and Ni layers. At room temperature, the EuS layers are spin-polarized due to the proximity of Ni. Therefore, Ni/EuS is a candidate for room-temperature spintronics applications.

Electronic properties of in-plane phase engineered 1T'/2H/1T' MoS2

NASA Astrophysics Data System (ADS)

Thakur, Rajesh; Sharma, Munish; Ahluwalia, P. K.; Sharma, Raman

2018-04-01

We present the first principles studies of semi-infinite phase engineered MoS2 along zigzag direction. The semiconducting (2H) and semi-metallic (1T') phases are known to be stable in thin-film MoS2. We described the electronic and structural properties of the infinite array of 1T'/2H/1T'. It has been found that 1T'phase induced semi-metallic character in 2H phase beyond interface but, only Mo atoms in 2H phase domain contribute to the semi-metallic nature and S atoms towards semiconducting state. 1T'/2H/1T' system can act as a typical n-p-n structure. Also high holes concentration at the interface of Mo layer provides further positive potential barriers.

Direct measurement of proximity-induced magnetism at the interface between a topological insulator and a ferromagnet

DOE PAGES

Lee, Changmin; Katmis, Ferhat; Jarillo-Herrero, Pablo; ...

2016-06-27

When a topological insulator (TI) is in contact with a ferromagnet, both time-reversal and inversion symmetries are broken at the interface. An energy gap is formed at the TI surface, and its electrons gain a net magnetic moment through short-range exchange interactions. Magnetic TIs can host various exotic quantum phenomena, such as massive Dirac fermions, Majorana fermions, the quantum anomalous Hall effect and chiral edge currents along the domain boundaries. However, selective measurement of induced magnetism at the buried interface has remained a challenge. Using magnetic second-harmonic generation, we directly probe both the in-plane and out-of-plane magnetizations induced at themore » interface between the ferromagnetic insulator (FMI) EuS and the three-dimensional TI Bi 2Se 3. Furthermore, our findings not only allow characterizing magnetism at the TI–FMI interface but also lay the groundwork for imaging magnetic domains and domain boundaries at the magnetic TI surfaces.« less

Substrate-induced interfacial plasmonics for photovoltaic conversion

PubMed Central

Li, Xinxi; Jia, Chuancheng; Ma, Bangjun; Wang, Wei; Fang, Zheyu; Zhang, Guoqing; Guo, Xuefeng

2015-01-01

Surface plasmon resonance (SPR) is widely used as light trapping schemes in solar cells, because it can concentrate light fields surrounding metal nanostructures and realize light management at the nanoscale. SPR in photovoltaics generally occurs at the metal/dielectric interfaces. A well-defined interface is therefore required to elucidate interfacial SPR processes. Here, we designed a photovoltaic device (PVD) with an atomically flat TiO2 dielectric/dye/graphene/metal nanoparticle (NP) interface for quantitatively studying the SPR enhancement of the photovoltaic conversion. Theoretical and experimental results indicated that the graphene monolayer was transparent to the electromagnetic field. This transparency led to significant substrate-induced plasmonic hybridization at the heterostructure interface. Combined with interparticle plasmonic coupling, the substrate-induced plasmonics concentrated light at the interface and enhanced the photo-excitation of dyes, thus improving the photoelectric conversion. Such a mechanistic understanding of interfacial plasmonic enhancement will further promote the development of efficient plasmon-enhanced solar cells and composite photocatalysts. PMID:26412576

First principles study on electrochemical and chemical stability of solid electrolyte–electrode interfaces in all-solid-state Li-ion batteries

DOE PAGES

Zhu, Yizhou; He, Xingfeng; Mo, Yifei

2015-12-11

All-solid-state Li-ion batteries based on ceramic solid electrolyte materials are a promising next-generation energy storage technology with high energy density and enhanced cycle life. The poor interfacial conductance is one of the key limitations in enabling all-solid-state Li-ion batteries. However, the origin of this poor conductance has not been understood, and there is limited knowledge about the solid electrolyte–electrode interfaces in all-solid-state Li-ion batteries. In this paper, we performed first principles calculations to evaluate the thermodynamics of the interfaces between solid electrolyte and electrode materials and to identify the chemical and electrochemical stabilities of these interfaces. Our computation results revealmore » that many solid electrolyte–electrode interfaces have limited chemical and electrochemical stability, and that the formation of interphase layers is thermodynamically favorable at these interfaces. These formed interphase layers with different properties significantly affect the electrochemical performance of all-solid-state Li-ion batteries. The mechanisms of applying interfacial coating layers to stabilize the interface and to reduce interfacial resistance are illustrated by our computation. This study demonstrates a computational scheme to evaluate the chemical and electrochemical stability of heterogeneous solid interfaces. Finally, the enhanced understanding of the interfacial phenomena provides the strategies of interface engineering to improve performances of all-solid-state Li-ion batteries.« less

A Numerical Method for Simulating the Microscopic Damage Evolution in Composites Under Uniaxial Transverse Tension

NASA Astrophysics Data System (ADS)

Zhi, Jie; Zhao, Libin; Zhang, Jianyu; Liu, Zhanli

2016-06-01

In this paper, a new numerical method that combines a surface-based cohesive model and extended finite element method (XFEM) without predefining the crack paths is presented to simulate the microscopic damage evolution in composites under uniaxial transverse tension. The proposed method is verified to accurately capture the crack kinking into the matrix after fiber/matrix debonding. A statistical representative volume element (SRVE) under periodic boundary conditions is used to approximate the microstructure of the composites. The interface parameters of the cohesive models are investigated, in which the initial interface stiffness has a great effect on the predictions of the fiber/matrix debonding. The detailed debonding states of SRVE with strong and weak interfaces are compared based on the surface-based and element-based cohesive models. The mechanism of damage in composites under transverse tension is described as the appearance of the interface cracks and their induced matrix micro-cracking, both of which coalesce into transversal macro-cracks. Good agreement is found between the predictions of the model and the in situ experimental observations, demonstrating the efficiency of the presented model for simulating the microscopic damage evolution in composites.

A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

NASA Astrophysics Data System (ADS)

Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

2018-01-01

Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

Creep and stress relaxation induced by interface diffusion in metal matrix composites

NASA Astrophysics Data System (ADS)

Li, Yinfeng; Li, Zhonghua

2013-03-01

An analytical solution is developed to predict the creep rate induced by interface diffusion in unidirectional fiber-reinforced and particle reinforced composites. The driving force for the interface diffusion is the normal stress acting on the interface, which is obtained from rigorous Eshelby inclusion theory. The closed-form solution is an explicit function of the applied stress, volume fraction and radius of the fiber, as well as the modulus ratio between the fiber and the matrix. It is interesting that the solution is formally similar to that of Coble creep in polycrystalline materials. For the application of the present solution in the realistic composites, the scale effect is taken into account by finite element analysis based on a unit cell. Based on the solution, a closed-form solution is also given as a description of stress relaxation induced by interfacial diffusion under constant strain. In addition, the analytical solution for the interface stress presented in this study gives some insight into the relationship between the interface diffusion and interface slip. This work was supported by the financial support from the Nature Science Foundation of China (No. 10932007), the National Basic Research Program of China (No. 2010CB631003/5), and the Doctoral Program of Higher Education of China (No. 20100073110006).

Human Helminths and Allergic Disease: The Hygiene Hypothesis and Beyond

PubMed Central

Santiago, Helton C.; Nutman, Thomas B.

2016-01-01

There is much debate about the interaction between helminths and allergic disease. The “Hygiene Hypothesis,” a very popular concept among scientists and the lay public, states that infections, especially during childhood, can protect against allergic diseases. Indeed, helminth infections are known to induce regulatory responses in the host that can help the control of inflammation (including allergic inflammation). However, these infections also induce type-2-associated immune responses including helminth-specific IgE that can cross-react against environmental allergens and mediate IgE-driven effector responses. Thus, it is the delicate balance between the parasites' anti- and pro-allergenic effects that define the helminth/allergy interface. PMID:27573628

Human Helminths and Allergic Disease: The Hygiene Hypothesis and Beyond.

PubMed

Santiago, Helton C; Nutman, Thomas B

2016-10-05

There is much debate about the interaction between helminths and allergic disease. The "Hygiene Hypothesis," a very popular concept among scientists and the lay public, states that infections, especially during childhood, can protect against allergic diseases. Indeed, helminth infections are known to induce regulatory responses in the host that can help the control of inflammation (including allergic inflammation). However, these infections also induce type-2-associated immune responses including helminth-specific IgE that can cross-react against environmental allergens and mediate IgE-driven effector responses. Thus, it is the delicate balance between the parasites' anti- and pro-allergenic effects that define the helminth/allergy interface. © The American Society of Tropical Medicine and Hygiene.

Consolidation of hydrophobic transition criteria by using an approximate energy minimization approach.

PubMed

Patankar, Neelesh A

2010-06-01

Recent experimental work has successfully revealed pressure induced transition from Cassie to Wenzel state on rough hydrophobic substrates. Formulas, based on geometric considerations and imposed pressure, have been developed as transition criteria. In the past, transition has also been considered as a process of overcoming the energy barrier between the Cassie and Wenzel states. A unified understanding of the various considerations of transition has not been apparent. To address this issue, in this work, we consolidate the transition criteria with a homogenized energy minimization approach. This approach decouples the problem of minimizing the energy to wet the rough substrate, from the energy of the macroscopic drop. It is seen that the transition from Cassie to Wenzel state, due to depinning of the liquid-air interface, emerges from the approximate energy minimization approach if the pressure-volume energy associated with the impaled liquid in the roughness is included. This transition can be viewed as a process in which the work done by the pressure force is greater than the barrier due to the surface energy associated with wetting the roughness. It is argued that another transition mechanism, due to a sagging liquid-air interface that touches the bottom of the roughness grooves, is not typically relevant if the substrate roughness is designed such that the Cassie state is at lower energy compared to the Wenzel state.

Radiation-Hardened Solid-State Drive

NASA Technical Reports Server (NTRS)

Sheldon, Douglas J.

2010-01-01

A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial off-the-shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated circuit) or a FPGA (field programmable gate array). Specific error handling and data management protocols are developed for use in a rad-hard environment. The rad-hard memories are smaller in overall memory density, but are used to control and manage radiation-induced errors in the main, and much larger density, non-rad-hard COTS memory devices. Small amounts of rad-hard memory are used as error buffers and temporary caches for radiation-induced errors in the large COTS memories. The rad-hard ASIC/FPGA implements a variety of error-handling protocols to manage these radiation-induced errors. The large COTS memory is triplicated for protection, and CRC-based counters are calculated for sub-areas in each COTS NVM array. These counters are stored in the rad-hard non-volatile memory. Through monitoring, rewriting, regeneration, triplication, and long-term storage, radiation-induced errors in the large NV memory are managed. The rad-hard ASIC/FPGA also interfaces with the external computer buses.

Induced-fit Mechanism for Prolyl Endopeptidase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Min; Chen, Changqing; Davies, David R.

2010-11-15

Prolyl peptidases cleave proteins at proline residues and are of importance for cancer, neurological function, and type II diabetes. Prolyl endopeptidase (PEP) cleaves neuropeptides and is a drug target for neuropsychiatric diseases such as post-traumatic stress disorder, depression, and schizophrenia. Previous structural analyses showing little differences between native and substrate-bound structures have suggested a lock-and-key catalytic mechanism. We now directly demonstrate from seven structures of Aeromonus punctata PEP that the mechanism is instead induced fit: the native enzyme exists in a conformationally flexible opened state with a large interdomain opening between the {beta}-propeller and {alpha}/{beta}-hydrolase domains; addition of substrate tomore » preformed native crystals induces a large scale conformational change into a closed state with induced-fit adjustments of the active site, and inhibition of this conformational change prevents substrate binding. Absolute sequence conservation among 28 orthologs of residues at the active site and critical residues at the interdomain interface indicates that this mechanism is conserved in all PEPs. This finding has immediate implications for the use of conformationally targeted drug design to improve specificity of inhibition against this family of proline-specific serine proteases.« less

FOREWORD: The 12th International Workshop on Desorption Induced by Electronic Transitions (DIET XII) (Pine Mountain, Georgia, USA, 19-23 April 2009) The 12th International Workshop on Desorption Induced by Electronic Transitions (DIET XII) (Pine Mountain, Georgia, USA, 19-23 April 2009)

NASA Astrophysics Data System (ADS)

Orlando, Thomas M.; Diebold, Ulrike

2010-03-01

The 12th International Workshop on Desorption Induced by Electronic Transitions (DIET XII) took place from 19-23 April 2009 in Pine Mountain, Georgia, USA. This was the 12th conference in a strong and vibrant series, which dates back to the early 1980s. DIET XII continued the tradition of exceptional interdisciplinary science and focused on the study of desorption and dynamics induced by electronic excitations of surfaces and interfaces. The format involved invited lectures, contributed talks and a poster session on the most recent developments and advances in this area of surface physics. The Workshop International Steering Committee and attendees wish to dedicate DIET XII to the memory of the late Professor Theodore (Ted) Madey. Ted was one of the main pioneers of this field and was one of the primary individuals working to keep this area of science exciting and adventurous. His overall contributions to surface science were countless and his contributions to the DIET field and community were enormous. He is missed and remembered by many friends and colleagues throughout the world. The papers collected in this issue cover many of the highlights of DIET XII. Topics include ultrafast electron transfer at surfaces and interfaces, quantum and spatially resolved mapping of surface dynamics and desorption, photon-, electron- and ion-beam induced processes at complex interfaces, the role of non-thermal desorption in astrochemistry and astrophysics and laser-/ion-based methods of examining soft matter and biological media. Although the workshop attracted many scientists active in the general area of non-thermal surface processes, DIET XII also attracted many younger scientists (i.e., postdoctoral fellows, advanced graduate students, and a select number of advanced undergraduate students). This field has had an impact in a number of areas including nanoscience, device physics, astrophysics, and now biophysics. We believe that this special issue of Journal of Physics: Condensed Matter will help foster further progress in the study of DIET processes. Since the field remains vibrant and exciting, the workshop series will continue with DIET XIII. Professor Richard Palmer (University of Birmingham, UK) will chair DIET XIII in the UK in early summer 2012. We gratefully acknowledge financial support from SPECS, HIDEN Analytical, BRUKER, The United States National Science Foundation, Georgia Institute of Technology and The State University of New Jersey, Rutgers.

Light tunneling effect tuned by a meta-interface with electromagnetically-induced-transparency-like properties

NASA Astrophysics Data System (ADS)

Feng, Tuanhui; Yang, Fei; Li, Yunhui; Sun, Yong; Lu, Hai; Jiang, Haitao; Zhang, Yewen; Chen, Hong

2013-06-01

In this letter, light tunneling effect tuned by a meta-interface with electromagnetically-induced-transparency-like (EIT-like) properties is investigated. Both numerical and experimental results show that the Q-factor of tunneling mode can be well enhanced when an atomic-like three-level system with EIT-like properties is introduced at the interface of a pair structure constructed by epsilon-negative and mu-negative metamaterials. Further study reveals that the Q-factor can be tuned conveniently by altering the EIT-like meta-interface. Moreover, these advantages are not at costs of increase of volume and drastic reduction of transmittance.

Solvent-Induced Crystallization in Poly(Ethylene Terephthalate) during Mass Transport

NASA Astrophysics Data System (ADS)

Ouyang, Hao

2001-03-01

The solvent transport in poly(ethylene terephthalate) (PET) and related phase transformation were investigated. The data of mass sorption were analyzed according to Harmon¡¦s model for Case I (Fickian), Case II (swelling) and anomalous transport. This transport process in PET is accompanied by the induced crystallization of the original amorphous state. The transformation was studied by wide angle x-ray scattering (WAXS), small angle x-ray scattering (SAXS), Differential Scanning Calorimeter (DSC), density gradient column, and Fourier Transform Infra-Red (FTIR). During this process, the matrix is under a compressive strain that causes different kinetic path of crystallization as compared to that by thermal annealing. This state of strain will assist the development of the solvent-induced crystallization. It also can be explained in terms of the principle of Le Chatelier if the local equilibrium is assumed. The model regarding the crystallization was proposed in terms of the study of long period L, the crystal thickness lc and the thickness of amorphous layer la, obtained from the linear correlation function and interface distribution function.

Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubio, E. J.; Mates, T. E.; Manandhar, S.

Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films alsomore » crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.« less

Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

PubMed Central

Araujo, Karolline A S; Cury, Luiz A; Matos, Matheus J S; Fernandes, Thales F D; Cançado, Luiz G

2018-01-01

The influence of graphene and retinoic acid (RA) – a π-conjugated organic semiconductor – interface on their hybrid system is investigated. The physical properties of the interface are assessed via scanning probe microscopy, optical spectroscopy (photoluminescence and Raman) and ab initio calculations. The graphene/RA interaction induces the formation of a well-organized π-conjugated self-assembled monolayer (SAM) at the interface. Such structural organization leads to the high optical emission efficiency of the RA SAM, even at room temperature. Additionally, photo-assisted electrical force microscopy, photo-assisted scanning Kelvin probe microscopy and Raman spectroscopy indicate a RA-induced graphene doping and photo-charge generation. Finally, the optical excitation of the RA monolayer generates surface potential changes on the hybrid system. In summary, interface-induced organized structures atop 2D materials may have an important impact on both design and operation of π-conjugated nanomaterial-based hybrid systems. PMID:29600157

Autonomous sweat extraction and analysis applied to cystic fibrosis and glucose monitoring using a fully integrated wearable platform.

PubMed

Emaminejad, Sam; Gao, Wei; Wu, Eric; Davies, Zoe A; Yin Yin Nyein, Hnin; Challa, Samyuktha; Ryan, Sean P; Fahad, Hossain M; Chen, Kevin; Shahpar, Ziba; Talebi, Salmonn; Milla, Carlos; Javey, Ali; Davis, Ronald W

2017-05-02

Perspiration-based wearable biosensors facilitate continuous monitoring of individuals' health states with real-time and molecular-level insight. The inherent inaccessibility of sweat in sedentary individuals in large volume (≥10 µL) for on-demand and in situ analysis has limited our ability to capitalize on this noninvasive and rich source of information. A wearable and miniaturized iontophoresis interface is an excellent solution to overcome this barrier. The iontophoresis process involves delivery of stimulating agonists to the sweat glands with the aid of an electrical current. The challenge remains in devising an iontophoresis interface that can extract sufficient amount of sweat for robust sensing, without electrode corrosion and burning/causing discomfort in subjects. Here, we overcame this challenge through realizing an electrochemically enhanced iontophoresis interface, integrated in a wearable sweat analysis platform. This interface can be programmed to induce sweat with various secretion profiles for real-time analysis, a capability which can be exploited to advance our knowledge of the sweat gland physiology and the secretion process. To demonstrate the clinical value of our platform, human subject studies were performed in the context of the cystic fibrosis diagnosis and preliminary investigation of the blood/sweat glucose correlation. With our platform, we detected the elevated sweat electrolyte content of cystic fibrosis patients compared with that of healthy control subjects. Furthermore, our results indicate that oral glucose consumption in the fasting state is followed by increased glucose levels in both sweat and blood. Our solution opens the possibility for a broad range of noninvasive diagnostic and general population health monitoring applications.

An interface tracking model for droplet electrocoalescence.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Lindsay Crowl

This report describes an Early Career Laboratory Directed Research and Development (LDRD) project to develop an interface tracking model for droplet electrocoalescence. Many fluid-based technologies rely on electrical fields to control the motion of droplets, e.g. microfluidic devices for high-speed droplet sorting, solution separation for chemical detectors, and purification of biodiesel fuel. Precise control over droplets is crucial to these applications. However, electric fields can induce complex and unpredictable fluid dynamics. Recent experiments (Ristenpart et al. 2009) have demonstrated that oppositely charged droplets bounce rather than coalesce in the presence of strong electric fields. A transient aqueous bridge forms betweenmore » approaching drops prior to pinch-off. This observation applies to many types of fluids, but neither theory nor experiments have been able to offer a satisfactory explanation. Analytic hydrodynamic approximations for interfaces become invalid near coalescence, and therefore detailed numerical simulations are necessary. This is a computationally challenging problem that involves tracking a moving interface and solving complex multi-physics and multi-scale dynamics, which are beyond the capabilities of most state-of-the-art simulations. An interface-tracking model for electro-coalescence can provide a new perspective to a variety of applications in which interfacial physics are coupled with electrodynamics, including electro-osmosis, fabrication of microelectronics, fuel atomization, oil dehydration, nuclear waste reprocessing and solution separation for chemical detectors. We present a conformal decomposition finite element (CDFEM) interface-tracking method for the electrohydrodynamics of two-phase flow to demonstrate electro-coalescence. CDFEM is a sharp interface method that decomposes elements along fluid-fluid boundaries and uses a level set function to represent the interface.« less

Nano-inspired fluidic interactivity for boiling heat transfer: impact and criteria

PubMed Central

Kim, Beom Seok; Choi, Geehong; Shin, Sangwoo; Gemming, Thomas; Cho, Hyung Hee

2016-01-01

The enhancement of boiling heat transfer, the most powerful energy-transferring technology, will lead to milestones in the development of high-efficiency, next-generation energy systems. Perceiving nano-inspired interface functionalities from their rough morphologies, we demonstrate interface-induced liquid refreshing is essential to improve heat transfer by intrinsically avoiding Leidenfrost phenomenon. High liquid accessibility of hemi-wicking and catalytic nucleation, triggered by the morphological and hydrodynamic peculiarities of nano-inspired interfaces, contribute to the critical heat flux (CHF) and the heat transfer coefficient (HTC). Our experiments show CHF is a function of universal hydrodynamic characteristics involving interfacial liquid accessibility and HTC is improved with a higher probability of smaller nuclei with less superheat. Considering the interface-induced and bulk liquid accessibility at boiling, we discuss functionalizing the interactivity between an interface and a counteracting fluid seeking to create a novel interface, a so-called smart interface, for a breakthrough in boiling and its pragmatic application in energy systems. PMID:27708341

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

NASA Astrophysics Data System (ADS)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Ultrafast modification of the polarity at LaAlO3/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Rubano, A.; Günter, T.; Fiebig, M.; Granozio, F. Miletto; Marrucci, L.; Paparo, D.

2018-01-01

Oxide growth with semiconductorlike accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This has yielded spectacular discoveries such as the conducting, magnetic, and even superconducting LaAlO3/SrTiO3 interfaces separating two prototypical insulating perovskite materials. All these investigations, however, consider the static state at the interface, although studies on fast oxide interface dynamics would introduce a powerful degree of freedom to understanding the nature of the LaAlO3/SrTiO3 interface state. Here, we show that the polarization state at the LaAlO3/SrTiO3 interface can be optically enhanced or attenuated within picoseconds. Our observations are explained by a model based on charge propagation effects in the interfacial vicinity and transient polarization buildup at the interface.

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

NASA Astrophysics Data System (ADS)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection

NASA Astrophysics Data System (ADS)

Bidzinski, Piotr; Miczek, Marcin; Adamowicz, Boguslawa; Mizue, Chihoko; Hashizume, Tamotsu

2011-04-01

The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias (-0.1 to -3 V) and light intensity (109 to 1020 photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on-off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance-voltage-light intensity measurements was also proposed.

The simulation study of protein-protein interfaces based on the 4-helix bundle structure

NASA Astrophysics Data System (ADS)

Fukuda, Masaki; Komatsu, Yu; Morikawa, Ryota; Miyakawa, Takeshi; Takasu, Masako; Akanuma, Satoshi; Yamagishi, Akihiko

2013-02-01

Docking of two protein molecules is induced by intermolecular interactions. Our purposes in this study are: designing binding interfaces on the two proteins, which specifically interact to each other; and inducing intermolecular interactions between the two proteins by mixing them. A 4-helix bundle structure was chosen as a scaffold on which binding interfaces were created. Based on this scaffold, we designed binding interfaces involving charged and nonpolar amino acid residues. We performed molecular dynamics (MD) simulation to identify suitable amino acid residues for the interfaces. We chose YciF protein as the scaffold for the protein-protein docking simulation. We observed the structure of two YciF protein molecules (I and II), and we calculated the distance between centroids (center of gravity) of the interfaces' surface planes of the molecules I and II. We found that the docking of the two protein molecules can be controlled by the number of hydrophobic and charged amino acid residues involved in the interfaces. Existence of six hydrophobic and five charged amino acid residues within an interface were most suitable for the protein-protein docking.

Theory of Interface States at Silicon / Transition - - Silicide Interfaces.

NASA Astrophysics Data System (ADS)

Lim, Hunhwa

The Si/NiSi(,2)(111) interface is of both fundamental and techno- logical interest: From the fundamental point of view, it is the best characterized of all semiconductor/metal interfaces, with two well-determined geometries (A and B) involving nearly perfect bonding. (This is because Si and NiSi(,2) have nearly the same lattice spacing.) Consequently, a theoretical treatment of this system makes sense--as it would not for messier systems--and one can have some confidence that the theoretical predictions are relevant to experimental observa- tions. From the technological point of view, Si/NiSi(,2) is representative of the class of semiconductor/metal interfaces that are currently of greatest interest in regard to electronic devices--Si/transition -metal-silicide interfaces. The calculations of this dissertation are for the intrinsic interface states of Si/NiSi(,2)-A geometry. These calculations also provide a foundation for later studies of defects at this interface, and for studies of other related systems, such as CoSi(,2). The calculations employ empirical tight-binding Hamiltonians for both Si and NiSi(,2) (with the parameters fitted to prior calculations of the bulk band structures, which appear to be in agreement with the available experimental data on bulk Si and NiSi(,2)). They also employ Green's function techniques--in particular, the subspace Hamiltonian technique. Our principal results are the following: (1) Interface state disper- sion curves are predicted along the symmetry lines (')(GAMMA)(')M, (')M(')K and (')K(')(GAMMA) of the surface Brillouin zone. (2) A prominent band of interface states is found which disperses downward from an energy within the Si band gap to an energy below the Si valence band edge E(,(upsilon)) as the planar wavevector (')k increases from (')(GAMMA) ((')k = 0) to (')M or (')K (symmetry points at boundary of the surface Brillouin zone). This band of inter- face states should be observable. It produces a peak in the surface density of states well below the valence band edge ((TURN)1 - 2eV below). Experimental studies to confirm these predictions would be of con- siderable interest. (3) These results may help to explain the intrinsic interface states already observed for another Si/transition -metal-silicide interface--Si/Pd(,2)Si. (4) Although observable in photo- emission experiments, these intrinsic interface states probably do not explain the observed Schottky barrier for Si/NiSi(,2), since they are primarily associated with the metal (NiSi(,2)) rather than the semi- conductor (Si). This appears to indicate that defect states are the best candidate to explain the Schottky barrier. For this conclusion to be definitive, further studies of the proper- ties of the intrinsic states are required. Perhaps more importantly, the defect states themselves need to be calculated. Such calculations are planned for the future. The present theory can also be applied to other Si/transition-metal-silicide interfaces, such as CoSi(,2).

Interface-induced multiferroism by design in complex oxide superlattices

PubMed Central

Guo, Hangwen; Wang, Zhen; Dong, Shuai; Ghosh, Saurabh; Saghayezhian, Mohammad; Chen, Lina; Weng, Yakui; Herklotz, Andreas; Ward, Thomas Z.; Jin, Rongying; Pantelides, Sokrates T.; Zhu, Yimei; Zhang, Jiandi; Plummer, E. W.

2017-01-01

Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La2/3Sr1/3MnO3 (LSMO)/BaTiO3 (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin–lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin–lattice coupling. PMID:28607082

On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi{sub 1–x}Sb{sub x} (0.07 ≤ x ≤ 0.2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muntyanu, F. M., E-mail: muntean-teodor@yahoo.com; Gheorghitsa, E. I.; Gilewski, A.

2017-04-15

Galvanomagnetic effects in twisting bicrystals of Bi{sub 1–x}Sb{sub x} alloys (0.07 ≤ x ≤ 0.2) at low temperatures and in magnetic fields up to 40 T are studied. It is found that, at small crystallite misorientation angles, the semiconductor–semimetal transition is induced in the central layer (~60-nm-thick) and two adjacent layers (each ~20-nm-thick) of the interface at different values of ultraquantum magnetic field. Bicrystals with large misorientation angles, being located in strong magnetic fields, exhibit quantum oscillations of the magnetoresistance and the Hall effect, thus indicating that the density of states is higher and charge carriers are heavier in themore » adjacent layers of the interfaces than in the crystallites. Our results show also that twisting bicrystals contain regions with different densities of quantum electronic states, which are determined by the crystallite misorientation angle and magnetic-field strength.« less

Characteristic-based and interface-sharpening algorithm for high-order simulations of immiscible compressible multi-material flows

NASA Astrophysics Data System (ADS)

He, Zhiwei; Tian, Baolin; Zhang, Yousheng; Gao, Fujie

2017-03-01

The present work focuses on the simulation of immiscible compressible multi-material flows with the Mie-Grüneisen-type equation of state governed by the non-conservative five-equation model [1]. Although low-order single fluid schemes have already been adopted to provide some feasible results, the application of high-order schemes (introducing relatively small numerical dissipation) to these flows may lead to results with severe numerical oscillations. Consequently, attempts to apply any interface-sharpening techniques to stop the progressively more severe smearing interfaces for a longer simulation time may result in an overshoot increase and in some cases convergence to a non-physical solution occurs. This study proposes a characteristic-based interface-sharpening algorithm for performing high-order simulations of such flows by deriving a pressure-equilibrium-consistent intermediate state (augmented with approximations of pressure derivatives) for local characteristic variable reconstruction and constructing a general framework for interface sharpening. First, by imposing a weak form of the jump condition for the non-conservative five-equation model, we analytically derive an intermediate state with pressure derivatives treated as additional parameters of the linearization procedure. Based on this intermediate state, any well-established high-order reconstruction technique can be employed to provide the state at each cell edge. Second, by designing another state with only different reconstructed values of the interface function at each cell edge, the advection term in the equation of the interface function is discretized twice using any common algorithm. The difference between the two discretizations is employed consistently for interface compression, yielding a general framework for interface sharpening. Coupled with the fifth-order improved accurate monotonicity-preserving scheme [2] for local characteristic variable reconstruction and the tangent of hyperbola for the interface capturing scheme [3] for designing other reconstructed values of the interface function, the present algorithm is examined using some typical tests, with the Mie-Grüneisen-type equation of state used for characterizing the materials of interest in both one- and two-dimensional spaces. The results of these tests verify the effectiveness of the present algorithm: essentially non-oscillatory and interface-sharpened results are obtained.

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces.

PubMed

Zu, Fengshuo; Amsalem, Patrick; Ralaiarisoa, Maryline; Schultz, Thorsten; Schlesinger, Raphael; Koch, Norbert

2017-11-29

Substantial variations in the electronic structure and thus possibly conflicting energetics at interfaces between hybrid perovskites and charge transport layers in solar cells have been reported by the research community. In an attempt to unravel the origin of these variations and enable reliable device design, we demonstrate that donor-like surface states stemming from reduced lead (Pb 0 ) directly impact the energy level alignment at perovskite (CH 3 NH 3 PbI 3-x Cl x ) and molecular electron acceptor layer interfaces using photoelectron spectroscopy. When forming the interfaces, it is found that electron transfer from surface states to acceptor molecules occurs, leading to a strong decrease in the density of ionized surface states. As a consequence, for perovskite samples with low surface state density, the initial band bending at the pristine perovskite surface can be flattened upon interface formation. In contrast, for perovskites with a high surface state density, the Fermi level is strongly pinned at the conduction band edge, and only minor changes in surface band bending are observed upon acceptor deposition. Consequently, depending on the initial perovskite surface state density, very different interface energy level alignment situations (variations over 0.5 eV) are demonstrated and rationalized. Our findings help explain the rather dissimilar reported energy levels at interfaces with perovskites, refining our understanding of the operating principles in devices comprising this material.

Soft beams: When capillarity induces axial compression

NASA Astrophysics Data System (ADS)

Neukirch, S.; Antkowiak, A.; Marigo, J.-J.

2014-01-01

We study the interaction of an elastic beam with a liquid drop in the case where bending and extensional effects are both present. We use a variational approach to derive equilibrium equations and constitutive relation for the beam. This relation is shown to include a term due to surface energy in addition to the classical Young's modulus term, leading to a modification of Hooke's law. At the triple point where solid, liquid, and vapor phases meet, we find that the external force applied on the beam is parallel to the liquid-vapor interface. Moreover, in the case where solid-vapor and solid-liquid interface energies do not depend on the extension state of the beam, we show that the extension in the beam is continuous at the triple point and that the wetting angle satisfies the classical Young-Dupré relation.

Soft beams: when capillarity induces axial compression.

PubMed

Neukirch, S; Antkowiak, A; Marigo, J-J

2014-01-01

We study the interaction of an elastic beam with a liquid drop in the case where bending and extensional effects are both present. We use a variational approach to derive equilibrium equations and constitutive relation for the beam. This relation is shown to include a term due to surface energy in addition to the classical Young's modulus term, leading to a modification of Hooke's law. At the triple point where solid, liquid, and vapor phases meet, we find that the external force applied on the beam is parallel to the liquid-vapor interface. Moreover, in the case where solid-vapor and solid-liquid interface energies do not depend on the extension state of the beam, we show that the extension in the beam is continuous at the triple point and that the wetting angle satisfies the classical Young-Dupré relation.

Coherently coupled ZnO and VO2 interface studied by photoluminescence and electrical transport across a phase transition

NASA Astrophysics Data System (ADS)

Srivastava, Amar; Herng, T. S.; Saha, Surajit; Nina, Bao; Annadi, A.; Naomi, N.; Liu, Z. Q.; Dhar, S.; Ariando; Ding, J.; Venkatesan, T.

2012-06-01

We have investigated the photoluminescence and electrical properties of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO2 layer on sapphire across the phase transition of VO2. The band edge and defect luminescence of the ZnO overlayer exhibit hysteresis in opposite directions induced by the phase transition of VO2. Concomitantly the phase transition of VO2 was seen to induce defects in the ZnO layer. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces in situ and also for novel device application.

Spin-orbit torque in a three-dimensional topological insulator-ferromagnet heterostructure: Crossover between bulk and surface transport

NASA Astrophysics Data System (ADS)

Ghosh, S.; Manchon, A.

2018-04-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Chemically sensitive free-volume study of amorphization of Cu60Zr40 induced by cold rolling and folding

NASA Astrophysics Data System (ADS)

Puff, Werner; Rabitsch, Herbert; Wilde, Gerhard; Dinda, Guru P.; Würschum, Roland

2007-06-01

With the aim to contribute to a microscopical understanding of the processes of solid-state amorphization, the chemically sensitive technique of background—reduced Doppler broadening of positron-electron annihilation radiation in combination with positron lifetime spectroscopy and microstructural characterization is applied to a free volume study of the amorphization of Cu60Zr40 induced by consecutive folding and rolling. Starting from the constituent pure metal foils, a nanosale multilayer structure of elemental layers and amorphous interlayers develops in an intermediate state of folding and rolling, where free volumes with a Zr-rich environment occur presumably located in the hetero-interfaces between the various layers or in grain boundaries of the Cu layers. After complete intermixing and amorphization, the local chemical environment of the free volumes reflects the average chemical alloy composition. In contrast to other processes of amorphization, free volumes of the size of few missing atoms occur in the rolling-induced amorphous state. Self-consistent results from three different methods for analyzing the Doppler broadening spectra, i.e., S-W-parameter correlation, multicomponent fit, and the shape of ratio curves, demonstrate the potential of the background-reduced Doppler technique for chemically sensitive characterization of structurally complex materials on an atomic scale.

Quantum routing of single optical photons with a superconducting flux qubit

NASA Astrophysics Data System (ADS)

Xia, Keyu; Jelezko, Fedor; Twamley, Jason

2018-05-01

Interconnecting optical photons with superconducting circuits is a challenging problem but essential for building long-range superconducting quantum networks. We propose a hybrid quantum interface between the microwave and optical domains where the propagation of a single-photon pulse along a nanowaveguide is controlled in a coherent way by tuning the electromagnetically induced transparency window with the quantum state of a flux qubit mediated by the spin in a nanodiamond. The qubit can route a single-photon pulse using the nanodiamond into a quantum superposition of paths without the aid of an optical cavity—simplifying the setup. By preparing the flux qubit in a superposition state our cavityless scheme creates a hybrid state-path entanglement between a flying single optical photon and a static superconducting qubit.

Measurement-induced long-distance entanglement of superconducting qubits using optomechanical transducers

NASA Astrophysics Data System (ADS)

Černotík, Ondřej; Hammerer, Klemens

2016-07-01

Although superconducting systems provide a promising platform for quantum computing, their networking poses a challenge because they cannot be interfaced to light, the medium used to send quantum signals through channels at room temperature. We show that mechanical oscillators can mediate such coupling and light can be used to measure the joint state of two distant qubits. The measurement provides information on the total spin of the two qubits such that entangled qubit states can be postselected. Entanglement generation is possible without ground-state cooling of the mechanical oscillators for systems with optomechanical cooperativity moderately larger than unity; in addition, our setup tolerates a substantial transmission loss. The approach is scalable to the generation of multipartite entanglement and represents a crucial step towards quantum networks with superconducting circuits.

A Novel Intrinsic Interface State Controlled by Atomic Stacking Sequence at Interfaces of SiC/SiO2.

PubMed

Matsushita, Yu-Ichiro; Oshiyama, Atsushi

2017-10-11

On the basis of ab initio total-energy electronic-structure calculations, we find that electron states localized at the SiC/SiO 2 interface emerge in the energy region between 0.3 eV below and 1.2 eV above the bulk conduction-band minimum (CBM) of SiC, being sensitive to the sequence of atomic bilayers in SiC near the interface. These new interface states unrecognized in the past are due to the peculiar characteristics of the CBM states that are distributed along the crystallographic channels. We also find that the electron doping modifies the energetics among the different stacking structures. Implication for performance of electron devices fabricated on different SiC surfaces is discussed.

EEG datasets for motor imagery brain-computer interface.

PubMed

Cho, Hohyun; Ahn, Minkyu; Ahn, Sangtae; Kwon, Moonyoung; Jun, Sung Chan

2017-07-01

Most investigators of brain-computer interface (BCI) research believe that BCI can be achieved through induced neuronal activity from the cortex, but not by evoked neuronal activity. Motor imagery (MI)-based BCI is one of the standard concepts of BCI, in that the user can generate induced activity by imagining motor movements. However, variations in performance over sessions and subjects are too severe to overcome easily; therefore, a basic understanding and investigation of BCI performance variation is necessary to find critical evidence of performance variation. Here we present not only EEG datasets for MI BCI from 52 subjects, but also the results of a psychological and physiological questionnaire, EMG datasets, the locations of 3D EEG electrodes, and EEGs for non-task-related states. We validated our EEG datasets by using the percentage of bad trials, event-related desynchronization/synchronization (ERD/ERS) analysis, and classification analysis. After conventional rejection of bad trials, we showed contralateral ERD and ipsilateral ERS in the somatosensory area, which are well-known patterns of MI. Finally, we showed that 73.08% of datasets (38 subjects) included reasonably discriminative information. Our EEG datasets included the information necessary to determine statistical significance; they consisted of well-discriminated datasets (38 subjects) and less-discriminative datasets. These may provide researchers with opportunities to investigate human factors related to MI BCI performance variation, and may also achieve subject-to-subject transfer by using metadata, including a questionnaire, EEG coordinates, and EEGs for non-task-related states. © The Authors 2017. Published by Oxford University Press.

Suppression of low-frequency charge noise in superconducting resonators by surface spin desorption.

PubMed

de Graaf, S E; Faoro, L; Burnett, J; Adamyan, A A; Tzalenchuk, A Ya; Kubatkin, S E; Lindström, T; Danilov, A V

2018-03-20

Noise and decoherence due to spurious two-level systems located at material interfaces are long-standing issues for solid-state quantum devices. Efforts to mitigate the effects of two-level systems have been hampered by a lack of knowledge about their chemical and physical nature. Here, by combining dielectric loss, frequency noise and on-chip electron spin resonance measurements in superconducting resonators, we demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the charge-induced frequency noise in the resonators. These measurements provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and highlights their role in generating charge noise in solid-state quantum devices.

Influence of convection on microstructure

NASA Technical Reports Server (NTRS)

Wilcox, William R.; Caram, Rubens; Mohanty, A. P.; Seth, Jayshree

1990-01-01

In eutectic growth, as the solid phases grow they reject atoms to the liquid. This results in a variation of melt composition along the solid/liquid interface. In the past, mass transfer in eutectic solidification, in the absence of convection, was considered to be governed only by the diffusion induced by compositional gradients. However, mass transfer can also be generated by a temperature gradient. This is called thermotransport, thermomigration, thermal diffusion or the Soret effect. A theoretical model of the influence of the Soret effect on the growth of eutectic alloys is presented. A differential equation describing the compositional field near the interface during unidirectional solidification of a binary eutectic alloy was formulated by including the contributions of both compositional and thermal gradients in the liquid. A steady-state solution of the differential equation was obtained by applying appropriate boundary conditions and accounting for heat flow in the melt. Following that, the average interfacial composition was converted to a variation of undercooling at the interface, and consequently to microstructural parameters. The results obtained show that thermotransport can, under certain circumstances, be a parameter of paramount importance.

Molecular Dynamics Simulations of Shock Wave Propagation across the Nitromethane Crystal-Melt Interface

NASA Astrophysics Data System (ADS)

Jiang, Shan; Sewell, Thomas D.; Thompson, Donald L.

2015-06-01

We are interested in understanding the fundamental processes that occur during propagation of shock waves across the crystal-melt interface in molecular substances. We have carried out molecular dynamics simulations of shock passage from the nitromethane (100)-oriented crystal into the melt and vice versa using the fully flexible, non-reactive Sorescu, Rice, and Thompson force field. A stable interface was established for a temperature near the melting point by using a combination of isobaric-isothermal (NPT) and isochoric-isothermal (NVT) simulations. The equilibrium bulk and interfacial regions were characterized using spatial-temporal distributions of molecular number density, kinetic and potential energy, and C-N bond orientations. Those same properties were calculated as functions of time during shock propagation. As expected, the local temperatures (intermolecular, intramolecular, and total) and stress states differed significantly between the liquid and crystal regions and depending on the direction of shock propagation. Substantial differences in the spatial distribution of shock-induced defect structures in the crystalline region were observed depending on the direction of shock propagation. Research supported by the U.S. Army Research Office.

Interfacial coupling and polarization of perovskite ABO3 heterostructures

NASA Astrophysics Data System (ADS)

Wu, Lijun; Wang, Zhen; Zhang, Bangmin; Yu, Liping; Chow, G. M.; Tao, Jing; Han, Myung-Geun; Guo, Hangwen; Chen, Lina; Plummer, E. W.; Zhang, Jiandi; Zhu, Yimei

2017-02-01

Interfaces with subtle difference in atomic and electronic structures in perovskite ABO3 heterostructures often yield intriguingly different properties, yet their exact roles remain elusive. In this article, we report an integrated study of unusual transport, magnetic, and structural properties of Pr0.67Sr0.33MnO3 (PSMO) films and La0.67Sr0.33MnO3 (LSMO) films of various thicknesses on SrTiO3 (STO) substrate. In particular, using atomically resolved imaging and electron energy-loss spectroscopy (EELS), we measured interface related local lattice distortion, BO6 octahedral rotation and cation-anion displacement induced polarization. In the very thin PSMO film, an unexpected interface-induced ferromagnetic polaronic insulator phase was observed during the cubic-to-tetragonal phase transition of the substrate STO, due to the enhanced electron-phonon interaction and atomic disorder in the film. On the other hand, for the very thin LSMO films we observed a remarkably deep polarization in non-ferroelectric STO substrate near the interface. Combining the experimental results with first principles calculations, we propose that the observed deep polarization is induced by an electric field originating from oxygen vacancies that extend beyond a dozen unit-cells from the interface, thus providing important evidence of the role of defects in the emergent interface properties of transition metal oxides.

Near Axisymmetric Partial Wetting Using Interface-Localized Liquid Dielectrophoresis.

PubMed

Brabcova, Zuzana; McHale, Glen; Wells, Gary G; Brown, Carl V; Newton, Michael I; Edwards, Andrew M J

2016-10-25

The wetting of solid surfaces can be modified by altering the surface free energy balance between the solid, liquid, and vapor phases. Liquid dielectrophoresis (L-DEP) can produce wetting on normally nonwetting surfaces, without modification of the surface topography or chemistry. L-DEP is a bulk force acting on the dipoles of a dielectric liquid and is not normally considered to be a localized effect acting at the interface between the liquid and a solid or other fluid. However, if this force is induced by a nonuniform electric field across a solid-liquid interface, it can be used to enhance and control the wetting of a dielectric liquid. Recently, it was reported theoretically and experimentally that this approach can cause a droplet of oil to spread along parallel interdigitated electrodes thus forming a stripe of liquid. Here we show that by using spiral-shaped electrodes actuated with four 90° successive phase-shifted signals, a near axisymmetric spreading of droplets can be achieved. Experimental observations show that the induced wetting can achieve film formation, an effect not possible with electrowetting. We show that the spreading is reversible thus enabling a wide range of partial wetting droplet states to be achieved in a controllable manner. Furthermore, we find that the cosine of the contact angle has a quadratic dependence on applied voltage during spreading and deduce a scaling law for the dependence of the strength of the effect on the electrode size.

Light-Induced Surface Reactions at the Bismuth Vanadate/Potassium Phosphate Interface.

PubMed

Favaro, Marco; Abdi, Fatwa F; Lamers, Marlene; Crumlin, Ethan J; Liu, Zhi; van de Krol, Roel; Starr, David E

2018-01-18

Bismuth vanadate has recently drawn significant research attention as a light-absorbing photoanode due to its performance for photoelectrochemical water splitting. In this study, we use in situ ambient pressure X-ray photoelectron spectroscopy with "tender" X-rays (4.0 keV) to investigate a polycrystalline bismuth vanadate (BiVO 4 ) electrode in contact with an aqueous potassium phosphate (KPi) solution at open circuit potential under both dark and light conditions. This is facilitated by the creation of a 25 to 30 nm thick electrolyte layer using the "dip-and-pull" method. We observe that under illumination bismuth phosphate forms on the BiVO 4 surface leading to an increase of the surface negative charge. The bismuth phosphate layer may act to passivate surface states observed in photoelectrochemical measurements. The repulsive interaction between the negatively charged surface under illumination and the phosphate ions in solution causes a shift in the distribution of ions in the thin aqueous electrolyte film, which is observed as an increase in their photoelectron signals. Interestingly, we find that such changes at the BiVO 4 /KPi electrolyte interface are reversible upon returning to dark conditions. By measuring the oxygen 1s photoelectron peak intensities from the phosphate ions and liquid water as a function of time under dark and light conditions, we determine the time scales for the forward and reverse reactions. Our results provide direct evidence for light-induced chemical modification of the BiVO 4 /KPi electrolyte interface.

Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS2/WS2 planar heterojunctions

NASA Astrophysics Data System (ADS)

Ghadiri, Hassan; Saffarzadeh, Alireza

2018-03-01

Low-energy coherent transport and a Goos-Hänchen (GH) lateral shift of valley electrons in planar heterojunctions composed of normal MoS2 and ferromagnetic WS2 monolayers are theoretically investigated. Two types of heterojunctions in the forms of WS2/MoS2/WS2 (type-A) and MoS2/WS2/MoS2 (type-B) with incident electrons in the MoS2 region are considered in which the lateral shift of electrons is induced by band alignments of the two constituent semiconductors. It is shown that the type-A heterojunction can act as an electron waveguide due to electron confinement between the two WS2/MoS2 interfaces which cause the incident electrons with an appropriate incidence angle to propagate along the interfaces. In this case, the spin- and valley-dependent GH shifts of totally reflected electrons from the interface lead to separated electrons with distinct spin-valley indexes after traveling a sufficiently long distance. In the type-B heterojunction, however, transmission resonances occur for incident electron beams passing through the structure, and large spin- and valley-dependent lateral shift values in propagating states can be achieved. Consequently, the transmitted electrons are spatially well-separated into electrons with distinct spin-valley indexes. Our findings reveal that the planar heterojunctions of transition metal dichalcogenides can be utilized as spin-valley beam filters and/or splitters without external gating.

Study of GaAs-oxide interface by transient capacitance spectroscopy - Discrete energy interface states

NASA Technical Reports Server (NTRS)

Kamieniecki, E.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

1980-01-01

Interface states and bulk GaAs energy levels were simultaneously investigated in GaAs MOS structures prepared by anodic oxidation. These two types of energy levels were successfully distinguished by carrying out a comparative analysis of deep level transient capacitance spectra of the MOS structures and MS structures prepared on the same samples of epitaxially grown GaAs. The identification and study of the interface states and bulk levels was also performed by investigating the transient capacitance spectra as a function of the filling pulse magnitude. It was found that in the GaAs-anodic oxide interface there are states present with a discrete energy rather than with a continuous energy distribution. The value of the capture cross section of the interface states was found to be 10 to the 14th to 10 to the 15th/sq cm, which is more accurate than the extremely large values of 10 to the -8th to 10 to the -9th/sq cm reported on the basis of conductance measurements.

The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces

NASA Astrophysics Data System (ADS)

Kuklin, Artem V.; Kuzubov, Alexander A.; Kovaleva, Evgenia A.; Lee, Hyosun; Sorokin, Pavel B.; Sakai, Seiji; Entani, Shiro; Naramoto, Hiroshi; Avramov, Paul

2017-10-01

Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

PubMed Central

Chen, Weifeng; Wu, Weijing; Zhou, Lei; Xu, Miao; Wang, Lei; Peng, Junbiao

2018-01-01

A semi-analytical extraction method of interface and bulk density of states (DOS) is proposed by using the low-frequency capacitance–voltage characteristics and current–voltage characteristics of indium zinc oxide thin-film transistors (IZO TFTs). In this work, an exponential potential distribution along the depth direction of the active layer is assumed and confirmed by numerical solution of Poisson’s equation followed by device simulation. The interface DOS is obtained as a superposition of constant deep states and exponential tail states. Moreover, it is shown that the bulk DOS may be represented by the superposition of exponential deep states and exponential tail states. The extracted values of bulk DOS and interface DOS are further verified by comparing the measured transfer and output characteristics of IZO TFTs with the simulation results by a 2D device simulator ATLAS (Silvaco). As a result, the proposed extraction method may be useful for diagnosing and characterising metal oxide TFTs since it is fast to extract interface and bulk density of states (DOS) simultaneously. PMID:29534492

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide.

PubMed

Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

2018-02-03

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

NASA Astrophysics Data System (ADS)

Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

2018-02-01

CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

M2 pyruvate kinase provides a mechanism for nutrient sensing and regulation of cell proliferation

PubMed Central

Morgan, Hugh P.; O’Reilly, Francis J.; Wear, Martin A.; O’Neill, J. Robert; Fothergill-Gilmore, Linda A.; Hupp, Ted; Walkinshaw, Malcolm D.

2013-01-01

We show that the M2 isoform of pyruvate kinase (M2PYK) exists in equilibrium between monomers and tetramers regulated by allosteric binding of naturally occurring small-molecule metabolites. Phenylalanine stabilizes an inactive T-state tetrameric conformer and inhibits M2PYK with an IC50 value of 0.24 mM, whereas thyroid hormone (triiodo-l-thyronine, T3) stabilizes an inactive monomeric form of M2PYK with an IC50 of 78 nM. The allosteric activator fructose-1,6-bisphosphate [F16BP, AC50 (concentration that gives 50% activation) of 7 μM] shifts the equilibrium to the tetrameric active R-state, which has a similar activity to that of the constitutively fully active isoform M1PYK. Proliferation assays using HCT-116 cells showed that addition of inhibitors phenylalanine and T3 both increased cell proliferation, whereas addition of the activator F16BP reduced proliferation. F16BP abrogates the inhibitory effect of both phenylalanine and T3, highlighting a dominant role of M2PYK allosteric activation in the regulation of cancer proliferation. X-ray structures show constitutively fully active M1PYK and F16BP-bound M2PYK in an R-state conformation with a lysine at the dimer-interface acting as a peg in a hole, locking the active tetramer conformation. Binding of phenylalanine in an allosteric pocket induces a 13° rotation of the protomers, destroying the peg-in-hole R-state interface. This distinct T-state tetramer is stabilized by flipped out Trp/Arg side chains that stack across the dimer interface. X-ray structures and biophysical binding data of M2PYK complexes explain how, at a molecular level, fluctuations in concentrations of amino acids, thyroid hormone, and glucose metabolites switch M2PYK on and off to provide the cell with a nutrient sensing and growth signaling mechanism. PMID:23530218

Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

2017-07-01

In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

Study of Surface States at the Semiconductor/electrolyte Interface of Liquid-Junction Solar Cells.

NASA Astrophysics Data System (ADS)

Siripala, Withana P.

The existence of surface states at the semiconductor electrolyte interface of photoelectrochemical (PEC) cells plays a major role in determining the performance of the device in regard to the potential distribution and transport mechanisms of photogenerated carriers at the interface. We have investigated the n-TiO(,2)/electrolyte interface using three experimental techniques: relaxation spectrum analysis, photocurrent spectroscopy, and electrolyte electroreflectance (EER) spectroscopy. The effect of Fermi level pinning at the CdIn(,2)SE(,4)/aqueous-polysulfide interface was also studied using EER. Three distinct surface states were observed at the n-TiO(,2)/aqueous-electrolyte interface. The dominant state, which tails from the conduction band edge, is primarily responsible for the surface recombination of photocarriers at the interface. The second surface state, observed at 0.8 eV below the conduction band of TiO(,2), originates in the dark charge transfer intermediates (TiO(,2)-H). It is proposed that the sub-bandgap (SBG) photocurrent-potential behavior is a result of the mechanism of dynamic formation and annihilation of these surface states. The third surface state was at 1.3 eV below the conduction band of TiO(,2), and the SBG EER measurements show this state is "intrinsic" to the surface. These states were detected with SBG EER and impedance measurements in the presence of electrolytes that can adsorb on the surface of TiO(,2). Surface concentration of these states was evaluated with impedance measurements. EER measurements on a CdIn(,2)Se(,4)/polysulfide system have shown that the EER spectrum is sensitive to the surface preparation of the sample. The EER signal was quenched as the surface was driven to strong depletion, owing to Fermi level pinning at the interface in the presence of a high density of surface states. The full analysis of this effect enables us to measure the change in the flatband potential, as a function of the electrode potential, and also the energy distribution of these states.

Atomic Structure of Interface States in Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

George, B. M.; Behrends, J.; Schnegg, A.; Schulze, T. F.; Fehr, M.; Korte, L.; Rech, B.; Lips, K.; Rohrmüller, M.; Rauls, E.; Schmidt, W. G.; Gerstmann, U.

2013-03-01

Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic structures to paramagnetic states involved in spin-dependent recombination at the interface of hydrogenated amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction solar cells. We find that (i) the interface exhibits microscopic roughness, (ii) the electronic structure of the interface defects is mainly determined by c-Si, (iii) we identify the microscopic origin of the conduction band tail state in the a-Si:H layer, and (iv) present a detailed recombination mechanism.

PREFACE: Functionalized Liquid Liquid Interfaces

NASA Astrophysics Data System (ADS)

Girault, Hubert; Kornyshev, Alexei A.; Monroe, Charles W.; Urbakh, Michael

2007-09-01

Most natural processes take place at interfaces. For this reason, surface science has been a focal point of modern research. At solid-liquid interfaces one can induce various species to adsorb or react, and thus may study interactions between the substrate and adsorbates, kinetic processes, optical properties, etc. Liquid-liquid interfaces, formed by immiscible liquids such as water and oil, have a number of distinctive features. Both sides of the interface are amenable to detailed physical and chemical analysis. By chemical or electrochemical means, metal or semiconductor nanoparticles can be formed or localised at the interface. Surfactants can be used to tailor surface properties, and also to place organic molecular or supermolecular constructions at the boundary between the liquids. Electric fields can be used to drive ions from one fluid to another, or even change the shape of the interface itself. In many cases, both liquids are optically transparent, making functionalized liquid-liquid interfaces promising for various optical applications based on the transmission or reflection of light. An advantage common to most of these systems is self-assembly; because a liquid-liquid interface is not mechanically constrained like a solid-liquid interface, it can easily access its most stable state, even after it has been driven far from equilibrium. This special issue focuses on four modes of liquid-liquid interfacial functionalization: the controlled adsorption of molecules or nanoparticles, the formation of adlayers or films, electrowetting, and ion transfer or interface-localized reactions. Interfacial adsorption can be driven electrically, chemically, or mechanically. The liquid-liquid interface can be used to study how anisotropic particles orient at a surface under the influence of a field, how surfactants interact with other adsorbates, and how nanoparticles aggregate; the transparency of the interface also makes the chirality of organic adsorbates amenable to optical study. Film formation goes a step beyond adsorption; some surfactants form monolayers or multilayers at the interface. A polymer microfilm or a polymer-particle matrix can be synthesized at the liquid-liquid boundary. Such films exhibit unique adsorption and ion-intercalation properties of their own. Electrowetting refers broadly to the phenomenon in which an applied voltage modulates the shape of a liquid-liquid interface, essentially by altering the surface tension. Electric fields can be used to induce droplets on solid substrates to change shape, or to affect the structure of liquid-liquid emulsions. Various chemical reactions can be performed at the liquid-liquid boundary. Liquid-liquid microelectrodes allow detailed study of ion-transfer kinetics at the interface. Photochemical processes can also be used to control the conformations of molecules adsorbed at the interface. But how much precise control do we actually have on the state of the interfacial region? Several contributions to this issue address a system which has been studied for decades in electrochemistry, but remains essentially unfamilar to physicists. This is the interface between two immiscible electrolytic solutions (ITIES), a progressing interdisciplinary field in which condensed-matter physics and physical chemistry meet molecular electrochemistry. Why is it so exciting? The reason is simple. The ITIES is chargeable: when positioned between two electrodes it can be polarized, and back- to-back electrical double layers form on both sides of the liquid-liquid interface. Importantly, the term immiscible refers not only to oil and water but also to the electrolytes. Inorganic electrolytes, such as alkali halides, tend to stay in water, whereas organic electrolytes, such as tetrabutylammonium tetraphenylborate, stay in oil. This behaviour arises because energies of the order of 0.2-0.3 eV are needed to drive ions across the interface. As long as these free energies of transfer are not exceeded by the external potential bias, the ITIES works as an 'electrode'; there is no traffic of ions across it. Thus the interface can sustain fields of the order of 106 V/cm, which are localized in a nanoscopic layer near the interface. This gives many new options for building various kinds of electrically tunable self assembled moloecular devices. Through the years, ITIES have been considered by electrochemists as a popular biomimetic model system, or for studies of interfacial reaction kinetics; ITIES were also used in industrial phase-transfer catalysis. Recently, this system has opened up new options for nano-scale engineering of functional assemblies (for dense information storage, efficient energy conversion, light-harvesting, and miniaturized sensors), which justifies its presentation in this issue.

Growth Kinetics of Magnesio-Aluminate Spinel in Al/Mg Lamellar Composite Interface

NASA Astrophysics Data System (ADS)

Fouad, Yasser; Rabeeh, Bakr Mohamed

The synthesis of Mg-Al2O3 double layered interface is introduced via the application of hot isostatic pressing, HIPing, in Al-Mg foils. Polycrystalline spinel layers are grown experimentally at the interfacial contacts between Al-Mg foils. The growth behavior of the spinel layers along with the kinetic parameters characterizing interface motion and long-range diffusion is established. Low melting depressant (LMD), Zn, and alloying element segregation tends to form micro laminated and/or Nano structure interphase in a lamellar composite solid state processing. Nano composite ceramic interphase materials offer interesting mechanical properties not achievable in other materials, such as superplastic flow and metal-like machinability. Microstructural characterization, mechanical characterization is also established via optical microscopy scanning electron microscopy, energy dispersive X-ray spectroscopy and tensile testing. Chemical and mechanical bonding via inter diffusion processing with alloy segregation are dominant for interphase kinetics. Mechanical characterization with interfacial shear strength is also introduced. HIPing processing is successfully applied on 6082 Al-alloy and AZ31 magnesium alloy for either particulate or micro-laminated interfacial composite processing. The interphase kinetic established through localized micro plasticity, metal flow, alloy segregation and delocalized Al oxide and Mg oxide. The kinetic of interface/interphase induce new nontraditional crack mitigation a long with new bridging and toughening mechanisms.

A computational study of photo-induced electron transfer rate constants in subphthalocyanine/C60 organic photovoltaic materials via Fermi's golden rule

NASA Astrophysics Data System (ADS)

Lee, Myeong H.; Dunietz, Barry D.; Geva, Eitan

2014-03-01

We present a methodology to obtain the photo-induced electron transfer rate constant in organic photovoltaic (OPV) materials within the framework of Fermi's golden rule, using inputs obtained from first-principles electronic structure calculation. Within this approach, the nuclear vibrational modes are treated quantum-mechanically and a short-time approximation is avoided in contrast to the classical Marcus theory where these modes are treated classically within the high-temperature and short-time limits. We demonstrate our methodology on boron-subphthalocyanine-chloride/C60 OPV system to determine the rate constants of electron transfer and electron recombination processes upon photo-excitation. We consider two representative donor/acceptor interface configurations to investigate the effect of interface configuration on the charge transfer characteristics of OPV materials. In addition, we determine the time scale of excited states population by employing a master equation after obtaining the rate constants for all accessible electronic transitions. This work is pursued as part of the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the US Department of Energy Office of Science, Office of Basic Energy Sciences under 390 Award No. DE-SC0000957.

Effects of Soluble Surfactant on Lateral Migration of a Bubble in a Shear Flow

NASA Astrophysics Data System (ADS)

Muradoglu, Metin; Tryggvason, Gretar

2014-11-01

Motivated by the recent experimental study of Takagi et al. (2008), direct numerical simulations are performed to examine effects of soluble surfactant on the lateral migration of a deformable bubble in a pressure-driven channel flow. The interfacial and bulk surfactant concentration evolution equations are solved fully coupled with the incompressible Navier-Stokes equations. A non-linear equation of state is used to relate interfacial surface tension to surfactant concentration at the interface. A multiscale method is developed to handle the mass exchange between the interface and bulk fluid at high Peclet numbers, using a boundary-layer approximation next to the bubble and a relatively coarse grid for the rest of the flow. It is found that the surfactant induced Marangoni stresses can dominate over the shear-induced lift force and thus alter the behavior of the bubble completely, i.e., the contaminated bubble drifts away from the channel wall and stabilizes at the center of the channel in contrast with the corresponding clean bubble that drifts toward the wall and stabilizes near the wall. The Scientific and Technical Research Council of Turkey (TUBITAK), Grant 112M181 and Turkish Academy of Sciences (TUBA).

Flow microcapillary plasma mass spectrometry-based investigation of new Al-Cr-Fe complex metallic alloy passivation.

PubMed

Ott, N; Beni, A; Ulrich, A; Ludwig, C; Schmutz, P

2014-03-01

Al-Cr-Fe complex metallic alloys are new intermetallic phases with low surface energy, low friction, and high corrosion resistance down to very low pH values (0-2). Flow microcapillary plasma mass spectrometry under potentiostatic control was used to characterize the dynamic aspect of passivation of an Al-Cr-Fe gamma phase in acidic electrolytes, allowing a better insight on the parameters inducing chemical stability at the oxyhydroxide-solution interface. In sulfuric acid pH 0, low element dissolution rates (in the µg cm(-2) range after 60 min) evidenced the passive state of the Al-Cr-Fe gamma phase with a preferential over-stoichiometric dissolution of Al and Fe cations. Longer air-aging was found to be beneficial for stabilizing the passive film. In chloride-containing electrolytes, ten times higher Al dissolution rates were detected at open-circuit potential (OCP), indicating that the spontaneously formed passive film becomes unstable. However, electrochemical polarization at low passive potentials induces electrical field generated oxide film modification, increasing chemical stability at the oxyhydroxide-solution interface. In the high potential passive region, localized attack is initiated with subsequent active metal dissolution. © 2013 Published by Elsevier B.V.

Inducing electric polarization in ultrathin insulating layers

NASA Astrophysics Data System (ADS)

Martinez-Castro, Jose; Piantek, Marten; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

Studies of ultrathin polar oxide films have attracted the interest of researchers for a long time due to their different properties compared to bulk materials. However they present several challenges such as the difficulty in the stabilization of the polar surfaces and the limited success in tailoring their properties. Moreover, recently developed Van der Waals materials have shown that the stacking of 2D-layers trigger new collective states thanks to the interaction between layers. Similarly, interface phenomena emerge in polar oxides, like induced ferroelectricity. This represents a promising way for the creation of new materials with customized properties that differ from those of the isolated layers. Here we present a new approach for the fabrication and study of atomically thin insulating films. We show that the properties of insulating polar layers of sodium chloride (NaCl) can be engineered when they are placed on top of a charge modulated template of copper nitride (Cu2N). STM studies carried out in ultra-high vacuum and at low temperatures over NaCl/Cu2N/Cu(001) show that we are able to build up and stabilize interfaces of polar surface at the limit of one atomic layer showing new properties not present before at the atomic scale.

Reversible control of magnetism in La 0.67Sr 0.33MnO 3 through chemically-induced oxygen migration

DOE PAGES

Grutter, A. J.; Gilbert, D. A.; Alaan, U. S.; ...

2016-02-22

We demonstrate reversible control of magnetization and anisotropy in La 0.67Sr 0.33MnO 3 films through interfacial oxygen migration. Gd metal capping layers deposited onto La 0.67Sr 0.33MnO 3 leach oxygen from the film through a solid-state redox reaction to form porous Gd 2O 3. X-ray absorption and polarized neutron reflectometry measurements show Mn valence alterations consistent with high oxygen vacancy concentrations, resulting in suppressed magnetization and increased coercive fields. Effects of the oxygen migration are observed both at the interface and also throughout the majority of a 40 nm thick film, suggesting extensive diffusion of oxygen vacancies. After Gd-capped Lamore » 0.67Sr 0.33MnO 3 is exposed to atmospheric oxygen for a prolonged period of time, oxygen diffuses through the Gd 2O 3 layer and the magnetization of the La 0.67Sr 0.33MnO 3 returns to the uncapped value. In conclusion, these findings showcase perovskite heterostructures as ideal candidates for developing functional interfaces through chemically-induced oxygen migration.« less

Apport de la microscopie a effet tunnel a la caracterisation d'interfaces molecule-metal a fort transfert de charge

NASA Astrophysics Data System (ADS)

Bedwani, Stephane

To assess the importance of charge-transfer on the interface properties, we studied the interaction of the tetracyanoethylene (TCNE) molecule with various copper surfaces. TCNE, a highly electrophilic molecule, appears as an ideal candidate to study the influence of high charge-transfer on the electronic and structural properties of molecule-surface interfaces. Indeed, various TCNE-transition metal complexes exhibit magnetism at room temperature, which is in agreement with a very significant change of the residual charge on the TCNE molecule. The adsorption of TCNE molecules on Cu(100) and Cu(111) surfaces was studied by scanning tunneling microscopy (STM) and by density functional theory (DFT) calculations with a local density approximation (LDA). DFT-LDA calculations were performed to determine the geometric and electronic structure of the studied interfaces. Mulliken analysis was used to evaluate the partial net charge on the adsorbed species. The density of states (DOS) diagrams provided informations on the nature of the frontier orbitals involved in the charge-transfer at molecule-metal interfaces. To validate the theoretical observations, a comparative study was conducted between our simulated STM images and experimental STM images provided by our collaborators. The theoretical STM images were obtained with the SPAGS-STM software using the Landauer-Buttiker formalism with a semi-empirical Hamiltonian based on the extended Huckel theory (EHT) and parameterized using DFT calculations. During the development of the SPAGS-STM software, we have created a discretization module allowing rapid generation of STM images. This module is based on an adaptive Delaunay meshing scheme to minimize the amount of tunneling current to be computed. The general idea consists into refining the mesh, and therefore the calculations, near large contrast zones rather than over the entire image. The adapted mesh provides an STM image resolution equivalent to that obtained with a conventional Cartesian grid but with a significantly smaller number of calculated pixels. This module is independent of the solver used to compute the tunneling current and can be transposed to different imaging techniques. Our work on the adsorption of TCNE molecules on Cu(100) surfaces revealed that the molecules assemble into a 1D chain, thereby buckling excessively a few Cu atoms from the surface. The large deformations observed at the molecule-metal interface show that the Cu atoms close to the TCNE nitrile groups assist the molecular assembly and show a distinct behavior compared with other Cu atoms. A strong charge-transfer is observed at the interface leading to an almost complete occupation of the state ascribed to the lowest unoccupied molecular orbital (LUMO) of TCNE in gas phase. In addition, a back-donation of charge from the molecule to the metal via the states associated with the highest occupied molecular orbitals (HOMO) of TCNE in gas phase may be seen. The magnitude of the charge-transfer between a TCNE molecule and Cu atoms is of the same order on the Cu(111) surface but causes much less buckling than that on the Cu(100) surface. However, experimental STM images of single TCNE molecules adsorbed on Cu(111) surfaces reveal a surprising electronic multistability. In addition, scanning tunneling spectroscopy (STS) reveals that one of these states has a magnetic nature and shows a Kondo resonance. STM simulations identified the source of two non-magnetic states. DFT-LDA calculations were able to ascribe the magnetic state to the partial occupation of a state corresponding to the LUMO+2 of TCNE. Moreover, the calculations showed that additional molecular deformations to those of TCNE in adsorbed phase, such the elongation of the C=C central bond and the bend of nitrile groups toward the surface, favor this charge-transfer to the LUMO+2. This suggested the presence of a Kondo state through the vibrational excitation of the stretching mode of the C=C central bond. The main results of this thesis led to the conclusion that strong charge-transfer between adsorbed molecules on a metallic surface may induce significant buckling of the surface. This surface reconstruction mechanism that involves a bidirectional charge-transfer between the species results into a partial net charge over the molecule. This mechanism is involved in the supramolecular self-assembly process that appears similar to a coordination network. Moreover, the adsorbed molecule presents some important geometric distortions that alter its electronic structure. Additional distortions on the adsorbed molecule induced by some molecular vibration modes seem to explain a stable magnetic state that can be switch on or off by an electrical impulse. (Abstract shortened by UMI.)

Interfacial charge-induced polarization switching in Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} bi-layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yu Jin; Park, Min Hyuk; Jeon, Woojin

2015-12-14

Detailed polarization switching behavior of an Al{sub 2}O{sub 3}/Pb(Zr,Ti)O{sub 3} (AO/PZT) structure is examined by comparing the phenomenological thermodynamic model to the experimental polarization–voltage (P-V) results. Amorphous AO films with various thicknesses (2–10 nm) were deposited on the polycrystalline 150-nm-thick PZT film. The thermodynamic calculation showed that the transition from the ferroelectric-like state to the paraelectric-like state with increasing AO thickness occurs at ∼3 nm thickness. This paraelectric-like state should have exhibited a negative capacitance effect without permanent polarization switching if no other adverse effects are involved. However, experiments showed typical ferroelectric-like hysteresis loops where the coercive voltage increased with the increasingmore » AO thickness, which could be explained by the carrier injection through the thin AO layer and trapping of the carriers at the AO/PZT interface. The fitting of the experimental P-V loops using the thermodynamic model considering the depolarization energy effect showed that trapped charge density was ∼±0.1 Cm{sup −2} and critical electric field at the Pt electrode/AO interface, at which the carrier transport occurs, was ∼±10 MV/cm irrespective of the AO thickness. Energy band model at each electrostatic state along the P-V loop was provided to elucidate correlation between macroscopic polarization and internal charge state of the stacked films.« less

Molecular level energy and electron transfer processes at nanocrystalline titanium dioxide interfaces

NASA Astrophysics Data System (ADS)

Farzad, Fereshteh

This thesis describes photo-induced molecular electron and energy transfer processes occurring at nanocrystalline semiconductor interfaces. The Introductory Chapter provides background and describes how these materials may be useful for solar energy conversion. In Chapter 2, results describing excitation of Ru(deeb)(bpy)2 2+, bis(2,2'-bipyridine)(2,2'-bipyridine-4,4 '-diethylester)ruthenium(II) hexafluorophosphate, bound to nanocrystalline TiO2 thin films, immersed in an acetonitrile bath are presented. The data indicates that light excitation forms predominately long-lived metal-to-ligand charge-transfer, MLCT, excited states under these conditions. Modeling of the data as a function of irradiance has been accomplished assuming parallel unimolecular and bimolecular excited state deactivation processes. The quantum yield for excited state formation depends on the excitation irradiance, consistent with triplet-triplet annihilation processes that occur with k > 1 x 108 s-1. Chapter 3 extends the work described in Chapter 2 to LiClO4 acetonitrile solutions. Li+ addition results in a red shift in the MLCT absorption and photoluminescence, PL, and a concentration dependent quenching of the PL intensity on TiO2. The Li+ induced spectroscopic changes were found to be reversible by varying the electrolyte composition. A second-order kinetic model quantified charge recombination transients. A model is proposed wherein Li+ ion adsorption stabilizes TiO2 acceptor states resulting in energetically more favorable interfacial electron transfer. The photophysical and photoelectrochemical properties of porous nanocrystalline anatase TiO2 electrodes modified with Ru(deeb)(bpy)2 2+, Os(deeb)(bpy)22+, and mixtures of both are described in Chapters 4 and 5. In regenerative solar cells with 0.5 M LiI/0.05 M I2 acetonitrile electrolyte, both compounds efficiently inject electrons into TiO2 producing monochromatic incident photon-to-current efficiencies (IPCE), IPCE (460 nm) = 0.70 + 0.05 for Ru(dcb)(bpy)2 2+/TiO2 and 0. 10 + 0.05 for Os(dcb)(bpy)2 2+/TiO2. Os(dcb)(bpy)22+ extends the spectral sensitivity of the TiO2 material beyond 700 rim. Application of a negative bias to the derivatized TiO2 surfaces results in inefficient interfacial electron transfer and no significant photocurrent. Instead, lateral energy transfer cross the nanocrystalline TiO2 surface from Ru(dcb)(bpy)22+* to Os(dcb)(bpy) 22+ is observed. The energy transfer process can be switched off with a positive applied bias ten times with no significant deterioration. The results demonstrate control of molecular excited states at nanostructured interfaces.

Atomic study on the ordered structure in Al melts induced by liquid/substrate interface with Ti solute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, H. L.; Han, Y. F., E-mail: yfhan@sjtu.edu.cn, E-mail: bdsun@sjtu.edu.cn; Zhou, W.

2015-01-26

Atomic ordering in Al melts induced by liquid/substrate interface with Ti solute was investigated by ab initio molecular dynamics simulations and in-situ synchrotron X-ray diffraction. It is predicted that deformed nanoscale ordering Al layers with a rhombohedral-centered hexagonal structure (R3{sup ¯}m space group) instead of the intrinsic fcc structure (Fm3{sup ¯}m space group) form on substrate at temperature above Al liquids. With Al atoms stacking away from the interface, the ordering structure reaches a critical thickness, which inhibits the consecutive stacking of Al atoms on substrates. The locally stacking reconstruction induced by Ti atom relieves the accumulated elastic strain energymore » in ordered Al layers, facilitating fully heterogeneous nucleation on substrate beyond the deformed ordering Al layer around the melting point. The roles of liquid/substrate interface with Ti solute in the physical behavior of heterogeneous nucleation on substrate were discussed.« less

Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene

DOE PAGES

Kalugin, Nikolai G.; Jing, Lei; Morell, Eric Suarez; ...

2016-10-24

Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localizedmore » electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. Here, the interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.« less

Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalugin, Nikolai G.; Jing, Lei; Morell, Eric Suarez

Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localizedmore » electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. Here, the interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.« less

The structural, electronic and optical properties of Au-ZnO interface structure from the first-principles calculation

NASA Astrophysics Data System (ADS)

Huo, Jin-Rong; Li, Lu; Cheng, Hai-Xia; Wang, Xiao-Xu; Zhang, Guo-Hua; Qian, Ping

2018-03-01

The interface structure, electronic and optical properties of Au-ZnO are studied using the first-principles calculation based on density functional theory (DFT). Given the interfacial distance, bonding configurations and terminated surface, we built the optimal interface structure and calculated the electronic and optical properties of the interface. The total density of states, partial electronic density of states, electric charge density and atomic populations (Mulliken) are also displayed. The results show that the electrons converge at O atoms at the interface, leading to a stronger binding of interfaces and thereby affecting the optical properties of interface structures. In addition, we present the binding energies of different interface structures. When the interface structure of Au-ZnO gets changed, furthermore, varying optical properties are exhibited.

Thermal imaging of spin Peltier effect

NASA Astrophysics Data System (ADS)

Daimon, Shunsuke; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji; Uchida, Ken-Ichi

2016-12-01

The Peltier effect modulates the temperature of a junction comprising two different conductors in response to charge currents across the junction, which is used in solid-state heat pumps and temperature controllers in electronics. Recently, in spintronics, a spin counterpart of the Peltier effect was observed. The `spin Peltier effect' modulates the temperature of a magnetic junction in response to spin currents. Here we report thermal imaging of the spin Peltier effect; using active thermography technique, we visualize the temperature modulation induced by spin currents injected into a magnetic insulator from an adjacent metal. The thermal images reveal characteristic distribution of spin-current-induced heat sources, resulting in the temperature change confined only in the vicinity of the metal/insulator interface. This finding allows us to estimate the actual magnitude of the temperature modulation induced by the spin Peltier effect, which is more than one order of magnitude greater than previously believed.

Topologically protected bound states in photonic parity-time-symmetric crystals.

PubMed

Weimann, S; Kremer, M; Plotnik, Y; Lumer, Y; Nolte, S; Makris, K G; Segev, M; Rechtsman, M C; Szameit, A

2017-04-01

Parity-time (PT)-symmetric crystals are a class of non-Hermitian systems that allow, for example, the existence of modes with real propagation constants, for self-orthogonality of propagating modes, and for uni-directional invisibility at defects. Photonic PT-symmetric systems that also support topological states could be useful for shaping and routing light waves. However, it is currently debated whether topological interface states can exist at all in PT-symmetric systems. Here, we show theoretically and demonstrate experimentally the existence of such states: states that are localized at the interface between two topologically distinct PT-symmetric photonic lattices. We find analytical closed form solutions of topological PT-symmetric interface states, and observe them through fluorescence microscopy in a passive PT-symmetric dimerized photonic lattice. Our results are relevant towards approaches to localize light on the interface between non-Hermitian crystals.

Analysis on annealing-induced stress of blind-via TSV using FEM

NASA Astrophysics Data System (ADS)

Shao, Jie; Shi, Tielin; Du, Li; Su, Lei; Lu, Xiangning; Liao, Guanglan

2017-07-01

Copper-filled through silicon via (TSV) is a promising material owing to its application in high-density three-dimensional (3D) packaging. However, in TSV manufacturing, thermo-mechanical stress is induced during the annealing process, often causing reliability issues. In this paper, the finite element method is employed to investigate the impacts of via shape and SiO2 liner uniformity on the thermo-mechanical properties of copper- filled blind-via TSV after annealing. Top interface stress analysis on the TSV structure shows that the curvature of via openings releases stress concentration that leads to 60 MPa decrease of normal stresses, σ xx and σ yy , in copper and 70 MPa decrease of σ xx in silicon. Meanwhile, the vertical interface analysis shows that annealing-induced stress at the SiO2/Si interface depends heavily on SiO2 uniformity. By increasing the thickness of SiO2 linear, the stress at the vertical interface can be significantly reduced. Thus, process optimization to reduce the annealing-induced stress becomes feasible. The results of this study help us gain a better understanding of the thermo-mechanical behavior of the annealed TSV in 3D packaging.

Structural basis for drug-induced allosteric changes to human β-cardiac myosin motor activity

PubMed Central

Winkelmann, Donald A.; Forgacs, Eva; Miller, Matthew T.; Stock, Ann M.

2015-01-01

Omecamtiv Mecarbil (OM) is a small molecule allosteric effector of cardiac myosin that is in clinical trials for treatment of systolic heart failure. A detailed kinetic analysis of cardiac myosin has shown that the drug accelerates phosphate release by shifting the equilibrium of the hydrolysis step towards products, leading to a faster transition from weak to strong actin-bound states. The structure of the human β-cardiac motor domain (cMD) with OM bound reveals a single OM-binding site nestled in a narrow cleft separating two domains of the human cMD where it interacts with the key residues that couple lever arm movement to the nucleotide state. In addition, OM induces allosteric changes in three strands of the β-sheet that provides the communication link between the actin-binding interface and the nucleotide pocket. The OM-binding interactions and allosteric changes form the structural basis for the kinetic and mechanical tuning of cardiac myosin. PMID:26246073

Controllable stearic acid crystal induced high hydrophobicity on cellulose film surface.

PubMed

He, Meng; Xu, Min; Zhang, Lina

2013-02-01

A novel, highly hydrophobic cellulose composite film (RCS) with biodegradability was fabricated via solvent-vaporized controllable crystallization of stearic acid in the porous structure of cellulose films (RC). The interface structure and properties of the composite films were investigated with wide-angle X-ray diffraction (WAXD), scanning electron microscopy (SEM), differential scanning calorimetry (DSC), FT-IR, solid-state (13)C NMR, water uptake, tensile testing, water contact angle, and biodegradation tests. The results indicated that the RCS films exhibited high hydrophobicity (water contact angle achieved to 145°), better mechanical properties in the humid state and lower water uptake ratio than RC. Interestingly, the stearic acid crystallization was induced by the pore wall of the cellulose matrix to form a micronano binary structure, resulting in a rough surface. The rough surface with a hierarchical structure containing micronanospace on the RCS film surface could trap abundant air, leading to the high hydrophobicity. Moreover, the RCS films were flexible, biodegradable, and low-cost, showing potential applications in biodegradable water-proof packaging.

Large interdomain rearrangement triggered by suppression of micro- to millisecond dynamics in bacterial Enzyme I

NASA Astrophysics Data System (ADS)

Venditti, Vincenzo; Tugarinov, Vitali; Schwieters, Charles D.; Grishaev, Alexander; Clore, G. Marius

2015-01-01

Enzyme I (EI), the first component of the bacterial phosphotransfer signal transduction system, undergoes one of the largest substrate-induced interdomain rearrangements documented to date. Here we characterize the perturbations generated by two small molecules, the natural substrate phosphoenolpyruvate and the inhibitor α-ketoglutarate, on the structure and dynamics of EI using NMR, small-angle X-ray scattering and biochemical techniques. The results indicate unambiguously that the open-to-closed conformational switch of EI is triggered by complete suppression of micro- to millisecond dynamics within the C-terminal domain of EI. Indeed, we show that a ligand-induced transition from a dynamic to a more rigid conformational state of the C-terminal domain stabilizes the interface between the N- and C-terminal domains observed in the structure of the closed state, thereby promoting the resulting conformational switch and autophosphorylation of EI. The mechanisms described here may be common to several other multidomain proteins and allosteric systems.

Data and results of a laboratory investigation of microprocessor upset caused by simulated lightning-induced analog transients

NASA Technical Reports Server (NTRS)

Belcastro, C. M.

1984-01-01

A methodology was developed a assess the upset susceptibility/reliability of a computer system onboard an aircraft flying through a lightning environment. Upset error modes in a general purpose microprocessor were studied. The upset tests involved the random input of analog transients which model lightning induced signals onto interface lines of an 8080 based microcomputer from which upset error data was recorded. The program code on the microprocessor during tests is designed to exercise all of the machine cycles and memory addressing techniques implemented in the 8080 central processing unit. A statistical analysis is presented in which possible correlations are established between the probability of upset occurrence and transient signal inputs during specific processing states and operations. A stochastic upset susceptibility model for the 8080 microprocessor is presented. The susceptibility of this microprocessor to upset, once analog transients have entered the system, is determined analytically by calculating the state probabilities of the stochastic model.

Excitation of high density surface plasmon polariton vortex array

NASA Astrophysics Data System (ADS)

Kuo, Chun-Fu; Chu, Shu-Chun

2018-06-01

This study proposes a method to excite surface plasmon polariton (SPP) vortex array of high spatial density on metal/air interface. A doughnut vector beam was incident at four rectangularly arranged slits to excite SPP vortex array. The doughnut vector beam used in this study has the same field intensity distribution as the regular doughnut laser mode, TEM01* mode, but a different polarization distribution. The SPP vortex array is achieved through the matching of both polarization state and phase state of the incident doughnut vector beam with the four slits. The SPP field distribution excited in this study contains stable array-distributed time-varying optical vortices. Theoretical derivation, analytical calculation and numerical simulation were used to discuss the characteristics of the induced SPP vortex array. The period of the SPP vortex array induced by the proposed method had only half SPPs wavelength. In addition, the vortex number in an excited SPP vortex array can be increased by enlarging the structure.

Crystal structure and dynamics of a lipid-induced potential desensitized-state of a pentameric ligand-gated channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basak, Sandip; Schmandt, Nicolaus; Gicheru, Yvonne

Desensitization in pentameric ligand-gated ion channels plays an important role in regulating neuronal excitability. Here, we show that docosahexaenoic acid (DHA), a key ω-3 polyunsaturated fatty acid in synaptic membranes, enhances the agonist-induced transition to the desensitized state in the prokaryotic channel GLIC. We determined a 3.25 Å crystal structure of the GLIC-DHA complex in a potentially desensitized conformation. The DHA molecule is bound at the channel-periphery near the M4 helix and exerts a long-range allosteric effect on the pore across domain-interfaces. In this previously unobserved conformation, the extracellular-half of the pore-lining M2 is splayed open, reminiscent of the openmore » conformation, while the intracellular-half is constricted, leading to a loss of both water and permeant ions. These findings, in combination with spin-labeling/EPR spectroscopic measurements in reconstituted-membranes, provide novel mechanistic details of desensitization in pentameric channels.« less

Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Asghar, M.; Mahmood, K.; Malik, Faisal; Hasan, M. A.

2013-06-01

In this paper, we have discussed the growth of ZnO by molecular beam epitaxy (MBE) and interface properties of Au Schottky contacts on grown sample. After the verification of structure and surface properties by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM), respectively, Au metal contact was fabricated by e-beam evaporation to study contact properties. The high value of ideality factor (2.15) and barrier height (0.61 eV) at room temperature obtained by current-voltage (I-V) characteristics suggested the presence of interface states between metal and semiconductor. To confirm this observation we carried out frequency dependent capacitance-voltage (C-V) and conductance-voltage (G-V) demonstrated that the capacitance of diode decreased with increasing frequency. The reason of this behavior is related with density of interface states, series resistance and image force lowering. The C-2-V plot drawn to calculate the carrier concentration and barrier height with values 1.4×1016 cm-3 and 0.92 eV respectively. Again, high value of barrier height obtained from C-V as compared to the value obtained from I-V measurements revealed the presence of interface states. The density of these interface states (Dit) was calculated by well known Hill-Coleman method. The calculated value of Dit at 1 MHz frequency was 2×1012 eV-1 cm-2. The plot between interface states and frequency was also drawn which demonstrated that density of interface states had inverse proportion with measuring frequency.

Mechanical stretch increases CCN2/CTGF expression in anterior cruciate ligament-derived cells.

PubMed

Miyake, Yoshiaki; Furumatsu, Takayuki; Kubota, Satoshi; Kawata, Kazumi; Ozaki, Toshifumi; Takigawa, Masaharu

2011-06-03

Anterior cruciate ligament (ACL)-to-bone interface serves to minimize the stress concentrations that would arise between two different tissues. Mechanical stretch plays an important role in maintaining cell-specific features by inducing CCN family 2/connective tissue growth factor (CCN2/CTGF). We previously reported that cyclic tensile strain (CTS) stimulates α1(I) collagen (COL1A1) expression in human ACL-derived cells. However, the biological function and stress-related response of CCN2/CTGF were still unclear in ACL fibroblasts. In the present study, CCN2/CTGF was observed in ACL-to-bone interface, but was not in the midsubstance region by immunohistochemical analyses. CTS treatments induced higher increase of CCN2/CTGF expression and secretion in interface cells compared with midsubstance cells. COL1A1 expression was not influenced by CCN2/CTGF treatment in interface cells despite CCN2/CTGF stimulated COL1A1 expression in midsubstance cells. However, CCN2/CTGF stimulated the proliferation of interface cells. Our results suggest that distinct biological function of stretch-induced CCN2/CTGF might regulate region-specific phenotypes of ACL-derived cells. Copyright © 2011 Elsevier Inc. All rights reserved.

Effect of Fullerene Passivation on the Charging and Discharging Behavior of Perovskite Solar Cells: Reduction of Bound Charges and Ion Accumulation.

PubMed

Shih, Yen-Chen; Wang, Leeyih; Hsieh, Hsiao-Chi; Lin, King-Fu

2018-04-11

Ion accumulation of organometal halide perovskites (OHPs) induced by electrode polarization of perovskite solar cells (PSCs) under illumination has been intensely studied and associated with a widely observed current-voltage hysteresis behavior. This work is dedicated to the investigation of the behavior of charged species at the compact TiO 2 /OHP interface with respect to electrode polarization in PSC devices. By providing a comprehensive discussion of open-circuit voltage ( V OC ) buildup and V OC decay under illumination and in the dark for the PSCs modified with [6,6]-phenyl-C 61 butyric acid methyl ester (PCBM) at the TiO 2 /OHP interface and their corresponding electrochemical impedance spectroscopies (EISs), a justified mechanism is proposed attempting to elucidate the dynamics of interfacial species with respect to the time and frequency domains. Our results demonstrate that the retarded V OC buildup and decay observed in PSC devices are related to the formation of bound charges in TiO 2 , which is essential to neutralize the oppositely charged ions accumulating at the OHP side. Besides, inserting a thicker PCBM at the TiO 2 /OHP interface as a passivation layer can alleviate the electrode polarization more efficiently as verified by the low dielectric constant measured from EIS. Moreover, photoluminescence measurements indicate that PCBM at the TiO 2 /OHP interface is capable of passivating a trap state and improving charge transfer. However, with respect to the time scale investigated in this work, the reduction of the hysteresis behavior on a millisecond scale is more likely due to less bound charge formation at the interface rather than shallow trap-state passivation by PCBM. After all, this work comprehensively demonstrates the interfacial properties of PSCs associated with PCBM passivation and helps to further understand its impact on charging/discharging as well as device performance.

Autonomous sweat extraction and analysis applied to cystic fibrosis and glucose monitoring using a fully integrated wearable platform

DOE PAGES

Emaminejad, Sam; Gao, Wei; Wu, Eric; ...

2017-04-17

Perspiration-based wearable biosensors facilitate continuous monitoring of individuals' health states with real-time and molecular-level insight. The inherent inaccessibility of sweat in sedentary individuals in large volume (≥10 μL) for on-demand and in situ analysis has limited our ability to capitalize on this noninvasive and rich source of information. A wearable and miniaturized iontophoresis interface is an excellent solution to overcome this barrier. The iontophoresis process involves delivery of stimulating agonists to the sweat glands with the aid of an electrical current. The challenge remains in devising an iontophoresis interface that can extract sufficient amount of sweat for robust sensing, withoutmore » electrode corrosion and burning/causing discomfort in subjects. Here, we overcame this challenge through realizing an electrochemically enhanced iontophoresis interface, integrated in a wearable sweat analysis platform. This interface can be programmed to induce sweat with various secretion profiles for real-time analysis, a capability which can be exploited to advance our knowledge of the sweat gland physiology and the secretion process. To demonstrate the clinical value of our platform, human subject studies were performed in the context of the cystic fibrosis diagnosis and preliminary investigation of the blood/sweat glucose correlation. With our platform, we detected the elevated sweat electrolyte content of cystic fibrosis patients compared with that of healthy control subjects. Furthermore, our results indicate that oral glucose consumption in the fasting state is followed by increased glucose levels in both sweat and blood. In conclusion, our solution opens the possibility for a broad range of noninvasive diagnostic and general population health monitoring applications.« less

Effects of TiO2 and TiC Nanofillers on the Performance of Dye Sensitized Solar Cells Based on the Polymer Gel Electrolyte of a Cobalt Redox System.

PubMed

Venkatesan, Shanmuganathan; Liu, I-Ping; Chen, Li-Tung; Hou, Yi-Chen; Li, Chiao-Wei; Lee, Yuh-Lang

2016-09-21

Polymer gel electrolytes (PGEs) of cobalt redox system are prepared for dye sensitized solar cell (DSSC) applications. Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) is used as a gelator of an acetonitrile (ACN) liquid electrolyte containing tris(2,2'-bipyridine)cobalt(II/III) redox couple. Titanium dioxide (TiO2) and titanium carbide (TiC) nanoparticles are utilized as nanofillers (NFs) of this PGE, and the effects of the two NFs on the conductivity of the PGEs, charge-transfer resistances at the electrode/PGE interface, and the performance of the gel-state DSSCs are studied and compared. The results show that the presence of TiC NFs significantly increases the conductivity of the PGE and decreases the charge-transfer resistance at the Pt counter-electrode (CE)/PGE interface. Therefore, the gel-state DSSC utilizing TiC NFs can achieve a conversion efficiency (6.29%) comparable to its liquid counterpart (6.30%), and, furthermore, the cell efficiency can retain 94% of its initial value after a 1000 h stability test at 50 °C. On the contrary, introduction of TiO2 NFs in the PGE causes a decrease of cell performances. It shows that the presence of TiO2 NFs increases the charge-transfer resistance at the Pt CE/PGE interface, induces the charge recombination at the photoanode/PGE interface, and, furthermore, causes a dye desorption in a long-term-stability test. These results are different from those reported for the iodide redox system and are ascribed to a specific attractive interaction between TiO2 and cobalt redox ions.

Autonomous sweat extraction and analysis applied to cystic fibrosis and glucose monitoring using a fully integrated wearable platform

PubMed Central

Emaminejad, Sam; Gao, Wei; Wu, Eric; Davies, Zoe A.; Yin Yin Nyein, Hnin; Challa, Samyuktha; Ryan, Sean P.; Fahad, Hossain M.; Chen, Kevin; Shahpar, Ziba; Talebi, Salmonn; Milla, Carlos; Javey, Ali; Davis, Ronald W.

2017-01-01

Perspiration-based wearable biosensors facilitate continuous monitoring of individuals’ health states with real-time and molecular-level insight. The inherent inaccessibility of sweat in sedentary individuals in large volume (≥10 µL) for on-demand and in situ analysis has limited our ability to capitalize on this noninvasive and rich source of information. A wearable and miniaturized iontophoresis interface is an excellent solution to overcome this barrier. The iontophoresis process involves delivery of stimulating agonists to the sweat glands with the aid of an electrical current. The challenge remains in devising an iontophoresis interface that can extract sufficient amount of sweat for robust sensing, without electrode corrosion and burning/causing discomfort in subjects. Here, we overcame this challenge through realizing an electrochemically enhanced iontophoresis interface, integrated in a wearable sweat analysis platform. This interface can be programmed to induce sweat with various secretion profiles for real-time analysis, a capability which can be exploited to advance our knowledge of the sweat gland physiology and the secretion process. To demonstrate the clinical value of our platform, human subject studies were performed in the context of the cystic fibrosis diagnosis and preliminary investigation of the blood/sweat glucose correlation. With our platform, we detected the elevated sweat electrolyte content of cystic fibrosis patients compared with that of healthy control subjects. Furthermore, our results indicate that oral glucose consumption in the fasting state is followed by increased glucose levels in both sweat and blood. Our solution opens the possibility for a broad range of noninvasive diagnostic and general population health monitoring applications. PMID:28416667

Autonomous sweat extraction and analysis applied to cystic fibrosis and glucose monitoring using a fully integrated wearable platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emaminejad, Sam; Gao, Wei; Wu, Eric

Perspiration-based wearable biosensors facilitate continuous monitoring of individuals' health states with real-time and molecular-level insight. The inherent inaccessibility of sweat in sedentary individuals in large volume (≥10 μL) for on-demand and in situ analysis has limited our ability to capitalize on this noninvasive and rich source of information. A wearable and miniaturized iontophoresis interface is an excellent solution to overcome this barrier. The iontophoresis process involves delivery of stimulating agonists to the sweat glands with the aid of an electrical current. The challenge remains in devising an iontophoresis interface that can extract sufficient amount of sweat for robust sensing, withoutmore » electrode corrosion and burning/causing discomfort in subjects. Here, we overcame this challenge through realizing an electrochemically enhanced iontophoresis interface, integrated in a wearable sweat analysis platform. This interface can be programmed to induce sweat with various secretion profiles for real-time analysis, a capability which can be exploited to advance our knowledge of the sweat gland physiology and the secretion process. To demonstrate the clinical value of our platform, human subject studies were performed in the context of the cystic fibrosis diagnosis and preliminary investigation of the blood/sweat glucose correlation. With our platform, we detected the elevated sweat electrolyte content of cystic fibrosis patients compared with that of healthy control subjects. Furthermore, our results indicate that oral glucose consumption in the fasting state is followed by increased glucose levels in both sweat and blood. In conclusion, our solution opens the possibility for a broad range of noninvasive diagnostic and general population health monitoring applications.« less

What can Andreev bound states tell us about superconductors?

PubMed

Millo, Oded; Koren, Gad

2018-08-06

Zero-energy Andreev bound states, which manifest themselves in the tunnelling spectra as zero-bias conductance peaks (ZBCPs), are abundant at interfaces between superconductors and other materials and on the nodal surface of high-temperature superconductors. In this review, we focus on the information such excitations can provide on the properties of superconductor systems. First, a general introduction to the physics of Andreev bound states in superconductor/normal metal interfaces is given with a particular emphasis on why they appear at zero energy in d -wave superconductors. Then, specific spectroscopic tunnelling studies of thin films, bilayers and junctions are described, focusing on the corresponding ZBCP features. Scanning tunnelling spectroscopy (STS) studies show that the ZBCPs on the c -axis YBa 2 Cu 3 O 7- δ (YBCO) films are correlated with the surface morphology and appear only in proximity to (110) facets. STS on c -axis La 1.88 Sr 0.12 CuO 4 (LSCO) films exhibiting the 1/8 anomaly shows spatially modulated peaks near zero bias associated with the anti-phase ordering of the d -wave order parameter predicted at this doping level. ZBCPs were also found in micrometre-size edge junctions of YBCO/SrRuO 3 /YBCO, where SrRuO 3 is ferromagnetic. Here, the results are consistent with a crossed Andreev reflection effect (CARE) at the narrow domain walls of the SrRuO 3 ZBCPs measured in STS studies of manganite/cuprate bilayers could not be attributed to CARE because the manganite's domain wall is much larger than the coherence length in YBCO, and instead are attributed to proximity-induced triplet-pairing superconductivity with non-conventional symmetry. And finally, ZBCPs found in junctions of non-intentionally doped topological insulator films of Bi 2 Se 3 and the s -wave superconductor NbN are attributed to proximity-induced p x  + ip y triplet order parameter in the topological material.This article is part of the theme issue 'Andreev bound states'. © 2018 The Author(s).

Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

NASA Astrophysics Data System (ADS)

Yoshioka, Hironori; Hirata, Kazuto

2018-04-01

The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14-350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm-2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V-1s-1 and was almost independent of temperature.

Application of Fault-Tolerant Computing For Spacecraft Using Commercial-Off-The-Shelf Microprocessors

DTIC Science & Technology

2000-06-01

real - time operating system and design of a human-computer interface (HCI) for a triple modular redundant (TMR) fault-tolerant microprocessor for use in space-based applications. Once disadvantage of using COTS hardware components is their susceptibility to the radiation effects present in the space environment. and specifically, radiation-induced single-event upsets (SEUs). In the event of an SEU, a fault-tolerant system can mitigate the effects of the upset and continue to process from the last known correct system state. The TMR basic hardware

Acoustic Dirac degeneracy and topological phase transitions realized by rotating scatterers

NASA Astrophysics Data System (ADS)

Wen, Xinhua; Qiu, Chunyin; Lu, Jiuyang; He, Hailong; Ke, Manzhu; Liu, Zhengyou

2018-03-01

The artificial crystals for classical waves provide a good platform to explore the topological physics proposed originally in condensed matter systems. In this paper, acoustic Dirac degeneracy is realized by simply rotating the scatterers in sonic crystals, where the degeneracy is induced accidentally by modulating the scattering strength among the scatterers during the rotation process. This gives a flexible way to create a topological phase transition in acoustic systems. Edge states are further observed along the interface separating the two topologically distinct gapped sonic crystals.

Symmetric and asymmetric exchange stiffnesses of transition-metal thin film interfaces in external electric field

NASA Astrophysics Data System (ADS)

Nakamura, K.; Pradipto, A.-M.; Akiyama, T.; Ito, T.; Oguchi, T.; Weinert, M.

2018-07-01

The electric-field induced modifications of the symmetric and asymmetric exchange stiffness constants for the prototypical transition-metal system of a Co monolayer on Pt(111) are determined from first-principles calculated total energy differences of spin-spiral states with oppositely rotating magnetizations in the presence of both the external field and spin-orbit coupling. The trend underlying the modifications is shown to be linked to orbital magnetism. The results demonstrate that an electric field may be a promising approach to manipulate macroscopically magnetic textures.

Anomalous behavior in the third harmonic generation z response through dispersion induced shape changes and matching χ(3)

NASA Astrophysics Data System (ADS)

Pillai, Rajesh S.; Brakenhoff, G. J.; Müller, M.

2006-09-01

The third harmonic generation (THG) axial response in the vicinity of an interface formed by two isotropic materials of normal dispersion is typically single peaked, with the maximum intensity at the interface position. Here it is shown experimentally that this THG z response may show anomalous behavior—being double peaked with a dip coinciding with the interface position—when the THG contributions from both materials are of similar magnitude. The observed anomalous behavior is explained, using paraxial Gaussian theory, by considering dispersion induced shape changes in the THG z response.

Selected Growth of Cubic and Hexagonal GaN Epitaxial Films on Polar MgO(111)

NASA Astrophysics Data System (ADS)

Lazarov, V. K.; Zimmerman, J.; Cheung, S. H.; Li, L.; Weinert, M.; Gajdardziska-Josifovska, M.

2005-06-01

Selected molecular beam epitaxy of zinc blende (111) or wurtzite (0001) GaN films on polar MgO(111) is achieved depending on whether N or Ga is deposited first. The cubic stacking is enabled by nitrogen-induced polar surface stabilization, which yields a metallic MgO(111)-(1×1)-ON surface. High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site. This specific atomic arrangement at the interface allows the cubic stacking to more effectively screen the substrate and film electric dipole moment than the hexagonal stacking, thus stabilizing the zinc blende phase even though the wurtzite phase is the ground state in the bulk.

Anomalous Dynamics of Water Confined in Protein-Protein and Protein-DNA Interfaces.

PubMed

Chong, Song-Ho; Ham, Sihyun

2016-10-06

Confined water often exhibits anomalous properties not observable in the bulk phase. Although water in hydrophobic confinement has been the focus of intense investigation, the behavior of water confined between hydrophilic surfaces, which are more frequently found in biological systems, has not been fully explored. Here, we investigate using molecular dynamics simulations dynamical properties of the water confined in hydrophilic protein-protein and protein-DNA interfaces. We find that the interfacial water exhibits glassy slow relaxations even at 300 K. In particular, the rotational dynamics show a logarithmic decay that was observed in glass-forming liquids at deeply supercooled states. We argue that such slow water dynamics are indeed induced by the hydrophilic binding surfaces, which is in opposition to the picture that the hydration water slaves protein motions. Our results will significantly impact the view on the role of water in biomolecular interactions.

Periplasmic Binding Protein Dimer Has a Second Allosteric Event Tied to Ligand Binding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Le; Ghimire-Rijal, Sudipa; Lucas, Sarah L.

Here, the ligand-induced conformational changes of periplasmic binding proteins (PBP) play a key role in the acquisition of metabolites in ATP binding cassette (ABC) transport systems. This conformational change allows for differential recognition of the ligand occupancy of the PBP by the ABC transporter. This minimizes futile ATP hydrolysis in the transporter, a phenomenon in which ATP hydrolysis is not coupled to metabolite transport. In many systems, the PBP conformational change is insufficient at eliminating futile ATP hydrolysis. Here we identify an additional state of the PBP that is also allosterically regulated by the ligand. Ligand binding to the homodimericmore » apo PBP leads to a tightening of the interface alpha-helices so that the hydrogen bonding pattern shifts to that of a 3 10 helix, in-turn altering the contacts and the dynamics of the protein interface so that the monomer exists in the presence of ligand.« less

Observation of topological valley transport of sound in sonic crystals

NASA Astrophysics Data System (ADS)

Lu, Jiuyang; Qiu, Chunyin; Ye, Liping; Fan, Xiying; Ke, Manzhu; Zhang, Fan; Liu, Zhengyou

2017-04-01

The concept of valley pseudospin, labelling quantum states of energy extrema in momentum space, is attracting attention because of its potential as a new type of information carrier. Compared with the non-topological bulk valley transport, realized soon after predictions, topological valley transport in domain walls is extremely challenging owing to the inter-valley scattering inevitably induced by atomic-scale imperfections--but an electronic signature was recently observed in bilayer graphene. Here, we report the experimental observation of topological valley transport of sound in sonic crystals. The macroscopic nature of sonic crystals permits a flexible and accurate design of domain walls. In addition to a direct visualization of the valley-selective edge modes through spatial scanning of the sound field, reflection immunity is observed in sharply curved interfaces. The topologically protected interface transport of sound, strikingly different from that in traditional sound waveguides, may serve as the basis for designing devices with unconventional functions.

Conduction at a ferroelectric interface

DOE PAGES

Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; ...

2014-11-05

Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

Addition of visual noise boosts evoked potential-based brain-computer interface.

PubMed

Xie, Jun; Xu, Guanghua; Wang, Jing; Zhang, Sicong; Zhang, Feng; Li, Yeping; Han, Chengcheng; Li, Lili

2014-05-14

Although noise has a proven beneficial role in brain functions, there have not been any attempts on the dedication of stochastic resonance effect in neural engineering applications, especially in researches of brain-computer interfaces (BCIs). In our study, a steady-state motion visual evoked potential (SSMVEP)-based BCI with periodic visual stimulation plus moderate spatiotemporal noise can achieve better offline and online performance due to enhancement of periodic components in brain responses, which was accompanied by suppression of high harmonics. Offline results behaved with a bell-shaped resonance-like functionality and 7-36% online performance improvements can be achieved when identical visual noise was adopted for different stimulation frequencies. Using neural encoding modeling, these phenomena can be explained as noise-induced input-output synchronization in human sensory systems which commonly possess a low-pass property. Our work demonstrated that noise could boost BCIs in addressing human needs.

Periplasmic Binding Protein Dimer Has a Second Allosteric Event Tied to Ligand Binding

DOE PAGES

Li, Le; Ghimire-Rijal, Sudipa; Lucas, Sarah L.; ...

2017-09-06

Here, the ligand-induced conformational changes of periplasmic binding proteins (PBP) play a key role in the acquisition of metabolites in ATP binding cassette (ABC) transport systems. This conformational change allows for differential recognition of the ligand occupancy of the PBP by the ABC transporter. This minimizes futile ATP hydrolysis in the transporter, a phenomenon in which ATP hydrolysis is not coupled to metabolite transport. In many systems, the PBP conformational change is insufficient at eliminating futile ATP hydrolysis. Here we identify an additional state of the PBP that is also allosterically regulated by the ligand. Ligand binding to the homodimericmore » apo PBP leads to a tightening of the interface alpha-helices so that the hydrogen bonding pattern shifts to that of a 3 10 helix, in-turn altering the contacts and the dynamics of the protein interface so that the monomer exists in the presence of ligand.« less

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Emission efficiency limit of Si nanocrystals

PubMed Central

Limpens, Rens; Luxembourg, Stefan L.; Weeber, Arthur W.; Gregorkiewicz, Tom

2016-01-01

One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3 × 1012 cm12, which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible. PMID:26786062

Tuning Interfacial States Using Organic Molecules as Spin Filters

NASA Astrophysics Data System (ADS)

Deloach, Andrew; Wang, Jingying; Papa, Christopher M.; Myahkostupov, Mykhaylo; Castellano, Felix N.; Dougherty, Daniel B.; Jiang, Wei; Liu, Feng

Organic semiconductors are known to have long spin relaxation times which makes them a good candidate for spintronics. However, an issue with these materials is that at metal-organic interfaces there is a conductivity mismatch problem that suppresses spin injection. To overcome this, orbital mixing at the interface can be tuned with an organic spacer layer to promote the formation of spin polarized interface states. These states act as a ``spin filters'' and have been proposed as an explanation for the large tunneling magnetoresistance seen in devices using tris-(8-hydroxyquinolate)-aluminum(Alq3). Here, we show that the spin polarized interface states can be tuned from metallic to resistive by subtle changes in molecular orbitals. This is done using spin polarized scanning tunneling microscopy with three different tris-(8-hydroxyquinolate) compounds: aluminum, chromium, and iron. Differences in d-orbital mixing results in different mechanisms of interfacial coupling, giving rise to metallic or resistive interface states. Supported by the U.S. DoE award No. DE-SC0010324.

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

NASA Technical Reports Server (NTRS)

Grunthaner, P. J.; Hecht, M. H.; Grunthaner, F. J.; Johnson, N. M.

1987-01-01

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

Superconducting proximity effect in topological materials

NASA Astrophysics Data System (ADS)

Reeg, Christopher R.

In recent years, there has been a renewed interest in the proximity effect due to its role in the realization of topological superconductivity. In this dissertation, we discuss several results that have been obtained in the field of proximity-induced superconductivity and relate the results to the search for Majorana fermions. First, we show that repulsive electron-electron interactions can induce a non-Majorana zero-energy bound state at the interface between a conventional superconductor and a normal metal. We show that this state is very sensitive to disorder, owing to its lack of topological protection. Second, we show that Rashba spin-orbit coupling, which is one of the key ingredients in engineering a topological superconductor, induces triplet pairing in the proximity effect. When the spin-orbit coupling is strong (i.e., when the characteristic energy scale for spin-orbit coupling is comparable to the Fermi energy), the induced singlet and triplet pairing amplitudes can be comparable in magnitude. Finally, we discuss how the size of the proximity-induced gap, which appears in a low-dimensional material coupled to a superconductor, evolves as the thickness of the (quasi-)low-dimensional material is increased. We show that the induced gap can be comparable to the bulk energy gap of the underlying superconductor in materials that are much thicker than the Fermi wavelength, even in the presence of an interfacial barrier and strong Fermi surface mismatch. This result has important experimental consequences for topological superconductivity, as a sizable gap is required to isolate and detect the Majorana modes.

Modified Oxygen Defect Chemistry at Transition Metal Oxide Heterostructures Probed by Hard X-ray Photoelectron Spectroscopy and X-ray Diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yan; Fong, Dillon D.; Herbert, F. William

Transition metal oxide hetero-structures are interesting due to the distinctly different properties that can arise from their interfaces, such as superconductivity, high catalytic activity and magnetism. Oxygen point defects can play an important role at these interfaces in inducing potentially novel properties. The design of oxide hetero-structures in which the oxygen defects are manipulated to attain specific functionalities requires the ability to resolve the state and concentration of local oxygen defects across buried interfaces. In this work, we utilized a novel combination of hard x-ray photoelectron spectroscopy (HAXPES) and high resolution xray diffraction (HRXRD) to probe the local oxygen defectmore » distribution across the buried interfaces of oxide heterolayers. This approach provides a non-destructive way to qualitatively probe locally the oxygen defects in transition metal oxide hetero-structures. We studied two trilayer structures as model systems - the La 0.8Sr 0.2CoO 3-δ/(La 0.5Sr 0.5) 2CoO 4/La 0.8Sr 0.2CoO 3-δ (LSC 113/LSC 214) and the La 0.8Sr 0.2CoO 3-δ/La 2NiO 4+δ/La 0.8Sr 0.2CoO 3-δ (LSC 113/LNO 214) on SrTiO 3(001) single crystal substrates. We found that the oxygen defect chemistry of these transition metal oxides was strongly impacted by the presence of interfaces and the properties of the adjacent phases. Under reducing conditions, the LSC 113 in the LSC 113/LNO 214 tri-layer had less oxygen vacancies than the LSC 113 in the LSC 113/LSC 214 tri-layer and the LSC 113 single phase film. On the other hand, LSC 214 and LNO 214 were more reduced in the two tri-layer structures when in contact with the LSC 113 layer compared to their single phase counterparts. Furthermore, the results point out a potential way to modify the local oxygen defect states at oxide hetero-interfaces.« less

Modified Oxygen Defect Chemistry at Transition Metal Oxide Heterostructures Probed by Hard X-ray Photoelectron Spectroscopy and X-ray Diffraction

DOE PAGES

Chen, Yan; Fong, Dillon D.; Herbert, F. William; ...

2018-04-17

Transition metal oxide hetero-structures are interesting due to the distinctly different properties that can arise from their interfaces, such as superconductivity, high catalytic activity and magnetism. Oxygen point defects can play an important role at these interfaces in inducing potentially novel properties. The design of oxide hetero-structures in which the oxygen defects are manipulated to attain specific functionalities requires the ability to resolve the state and concentration of local oxygen defects across buried interfaces. In this work, we utilized a novel combination of hard x-ray photoelectron spectroscopy (HAXPES) and high resolution xray diffraction (HRXRD) to probe the local oxygen defectmore » distribution across the buried interfaces of oxide heterolayers. This approach provides a non-destructive way to qualitatively probe locally the oxygen defects in transition metal oxide hetero-structures. We studied two trilayer structures as model systems - the La 0.8Sr 0.2CoO 3-δ/(La 0.5Sr 0.5) 2CoO 4/La 0.8Sr 0.2CoO 3-δ (LSC 113/LSC 214) and the La 0.8Sr 0.2CoO 3-δ/La 2NiO 4+δ/La 0.8Sr 0.2CoO 3-δ (LSC 113/LNO 214) on SrTiO 3(001) single crystal substrates. We found that the oxygen defect chemistry of these transition metal oxides was strongly impacted by the presence of interfaces and the properties of the adjacent phases. Under reducing conditions, the LSC 113 in the LSC 113/LNO 214 tri-layer had less oxygen vacancies than the LSC 113 in the LSC 113/LSC 214 tri-layer and the LSC 113 single phase film. On the other hand, LSC 214 and LNO 214 were more reduced in the two tri-layer structures when in contact with the LSC 113 layer compared to their single phase counterparts. Furthermore, the results point out a potential way to modify the local oxygen defect states at oxide hetero-interfaces.« less

Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Chen, Bingbing; Shen, Yanjiao; Guo, Jianxin; Liu, Baoting; Dai, Xiuhong; Xu, Ying; Mai, Yaohua

2017-11-01

A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics.

Amino-Acid-Induced Preferential Orientation of Perovskite Crystals for Enhancing Interfacial Charge Transfer and Photovoltaic Performance.

PubMed

Shih, Yen-Chen; Lan, Yu-Bing; Li, Chia-Shuo; Hsieh, Hsiao-Chi; Wang, Leeyih; Wu, Chih-I; Lin, King-Fu

2017-06-01

Interfacial engineering of perovskite solar cells (PSCs) is attracting intensive attention owing to the charge transfer efficiency at an interface, which greatly influences the photovoltaic performance. This study demonstrates the modification of a TiO 2 electron-transporting layer with various amino acids, which affects charge transfer efficiency at the TiO 2 /CH 3 NH 3 PbI 3 interface in PSC, among which the l-alanine-modified cell exhibits the best power conversion efficiency with 30% enhancement. This study also shows that the (110) plane of perovskite crystallites tends to align in the direction perpendicular to the amino-acid-modified TiO 2 as observed in grazing-incidence wide-angle X-ray scattering of thin CH 3 NH 3 PbI 3 perovskite film. Electrochemical impedance spectroscopy reveals less charge transfer resistance at the TiO 2 /CH 3 NH 3 PbI 3 interface after being modified with amino acids, which is also supported by the lower intensity of steady-state photoluminescence (PL) and the reduced PL lifetime of perovskite. In addition, based on the PL measurement with excitation from different side of the sample, amino-acid-modified samples show less surface trapping effect compared to the sample without modification, which may also facilitate charge transfer efficiency at the interface. The results suggest that appropriate orientation of perovskite crystallites at the interface and trap-passivation are the niche for better photovoltaic performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron mobility in the inversion layers of fully depleted SOI films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I.

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished.more » The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.« less

Direct observation of stick-slip movements of water nanodroplets induced by an electron beam

PubMed Central

Mirsaidov, Utkur M.; Zheng, Haimei; Bhattacharya, Dipanjan; Casana, Yosune; Matsudaira, Paul

2012-01-01

Dynamics of the first few nanometers of water at the interface are encountered in a wide range of physical, chemical, and biological phenomena. A simple but critical question is whether interfacial forces at these nanoscale dimensions affect an externally induced movement of a water droplet on a surface. At the bulk-scale water droplets spread on a hydrophilic surface and slip on a nonwetting, hydrophobic surface. Here we report the experimental description of the electron beam-induced dynamics of nanoscale water droplets by direct imaging the translocation of 10- to 80-nm-diameter water nanodroplets by transmission electron microscopy. These nanodroplets move on a hydrophilic surface not by a smooth flow but by a series of stick-slip steps. We observe that each step is preceded by a unique characteristic deformation of the nanodroplet into a toroidal shape induced by the electron beam. We propose that this beam-induced change in shape increases the surface free energy of the nanodroplet that drives its transition from stick to slip state. PMID:22517747

Depth Profile of Induced Magnetic Polarization in Cu Layers of Co/Cu(111) Metallic Superlattices by Resonant X-ray Magnetic Scattering at the Cu K Absorption Edge

NASA Astrophysics Data System (ADS)

Uegaki, Shin; Yoshida, Akihiro; Hosoito, Nobuyoshi

2015-03-01

We investigated induced spin polarization of 4p conduction electrons in Cu layers of antiferromagnetically (AFM) and ferromagnetically (FM) coupled Co/Cu(111) metallic superlattices by resonant X-ray magnetic scattering at the Cu K absorption edge. Magnetic reflectivity profiles of the two superlattices were measured in the magnetic saturation state with circularly polarized synchrotron radiation X-rays at 8985 eV. Depth profiles of the resonant magnetic scattering length of Cu, which corresponds to the induced spin polarization of Cu, were evaluated in the two Co/Cu superlattices by analyzing the observed magnetic reflectivity profiles. We demonstrated that the spin polarization induced in the Cu layer was distributed around the Co/Cu interfaces with an attenuation length of several Å in both AFM and FM coupled superlattices. The uniform component, which exists in Au layers of Fe/Au(001) superlattices, was not found in the depth distribution of induced magnetic polarization in the Cu layers of Co/Cu(111) superlattices.

Manipulating mesoscopic multipartite entanglement with atom-light interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stasinska, J.; Rodo, C.; Paganelli, S.

2009-12-15

Entanglement between two macroscopic atomic ensembles induced by measurement on an ancillary light system has proven to be a powerful method for engineering quantum memories and quantum state transfer. Here we investigate the feasibility of such methods for generation, manipulation, and detection of genuine multipartite entanglement (Greenberger-Horne-Zeilinger and clusterlike states) between mesoscopic atomic ensembles without the need of individual addressing of the samples. Our results extend in a nontrivial way the Einstein-Podolsky-Rosen entanglement between two macroscopic gas samples reported experimentally in [B. Julsgaard, A. Kozhekin, and E. Polzik, Nature (London) 413, 400 (2001)]. We find that under realistic conditions, amore » second orthogonal light pulse interacting with the atomic samples, can modify and even reverse the entangling action of the first one leaving the samples in a separable state.« less

Photoelectron spectroscopy of Ar/Cu(100) interface states

NASA Astrophysics Data System (ADS)

Rohleder, M.; Berthold, W.; Güdde, J.; Höfer, U.

2007-08-01

Buried interface states in Ar/Cu(100) were studied by means of one- and two-photon photoemission experiments. With increasing Ar overlayer thickness, a transition from broad electron scattering resonances in the Ar conduction band into a hydrogen-like series of quasi-bound states at the Ar/Cu interface was observed. The thickness dependence of energies and lifetimes is compared to theoretical resonance positions and linewidths derived from a parameterized one-dimensional potential.

State transition storyboards: A tool for designing the Goldstone solar system radar data acquisition system user interface software

NASA Technical Reports Server (NTRS)

Howard, S. D.

1987-01-01

Effective user interface design in software systems is a complex task that takes place without adequate modeling tools. By combining state transition diagrams and the storyboard technique of filmmakers, State Transition Storyboards were developed to provide a detailed modeling technique for the Goldstone Solar System Radar Data Acquisition System human-machine interface. Illustrations are included with a description of the modeling technique.

Convection-induced distortion of a solid-liquid interface

NASA Technical Reports Server (NTRS)

Schaefer, R. J.; Coriell, S. R.

1984-01-01

Measurements of convective flow fields and solid-liquid interface shapes during the solidification of a pure and a slightly alloyed transparent material reveal that the convective transport of solute can cause a macroscopic depression to develop in the solid-liquid interface. This effect occurs under conditions close to those which are predicted to produce morphological instability of a planar interface. A cellular or dendritic microstructure later develops within the interface depression. The convection is attributed to the effect of radial temperature gradients in the crystal growth apparatus.

Hydrodynamically induced fluid transfer and non-convective double-diffusion in microgravity sliding solvent diffusion cells

NASA Technical Reports Server (NTRS)

Pollmann, Konrad W.; Stodieck, Louis S.; Luttges, Marvin W.

1994-01-01

Microgravity can provide a diffusion-dominated environment for double-diffusion and diffusion-reaction experiments otherwise disrupted by buoyant convection or sedimentation. In sliding solvent diffusion cells, a diffusion interface between two liquid columns is achieved by aligning two offset sliding wells. Fluid in contact with the sliding lid of the cavities is subjected to an applied shear stress. The momentum change by the start/stop action of the well creates an additional hydrodynamical force. In microgravity, these viscous and inertial forces are sufficiently large to deform the diffusion interface and induce hydrodynamic transfer between the wells. A series of KC-135 parabolic flight experiments were conducted to characterize these effects and establish baseline data for microgravity diffusion experiments. Flow visualizations show the diffusion interface to be deformed in a sinusoidal fashion following well alignment. After the wells were separated again in a second sliding movement, the total induced liquid transfer was determined and normalized by the well aspect ratio. The normalized transfer decreased linearly with Reynolds number from 3.3 to 4.0% (w/v) for Re = 0.4 (Stokes flow) to a minimum of 1.0% for Re = 23 to 30. Reynolds numbers that provide minimum induced transfers are characterized by an interface that is highly deformed and unsuitable for diffusion measurements. Flat diffusion interfaces acceptable for diffusion measurements are obtained with Reynolds numbers on the order of 7 to 10. Microgravity experiments aboard a sounding rocket flight verified counterdiffusion of different solutes to be diffusion dominated. Ground control experiments showed enhanced mixing by double-diffusive convection. Careful selection of experimental parameters improves initial conditions and minimizes induced transfer rates.

GaAs-oxide interface states - A gigantic photoionization effect and its implications to the origin of these states

NASA Technical Reports Server (NTRS)

Lagowski, J.; Walukiewicz, W.; Kazior, T. E.; Gatos, H. C.; Siejka, J.

1981-01-01

Gigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 1000 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor-donor transitions and is explained as due to energy transfer from photo-excited donor-acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.

Local Structure Analysis and Interface Layer Effect of Phase-Change Recording Material Using Actual Media

NASA Astrophysics Data System (ADS)

Nakai, Tsukasa; Yoshiki, Masahiko; Satoh, Yasuhiro; Ashida, Sumio

2008-07-01

The influences of the interface layer on crystal structure, the local atomic arrangement, and the electronic and chemical structure of a GeBiTe (GBT) phase-change recording material have been investigated using X-ray diffraction (XRD), X-ray absorption fine structure (XAFS), and hard X-ray photoelectron spectroscopy (HX-PES) methods using actual rewritable high-speed HD DVD media without special sample processing. XRD results showed that the crystal structure of laser-crystallized GBT alloy in the actual HD DVD media is the same as that of GeSbTe (GST) alloy, which has a NaCl-type structure. No differences between samples with and without interface layers were found. The lattice constant of GBT is larger than that of GST. Bi increases the lattice constant of GST with respect to the Bi substitution ratio of Sb. According to HX-PES, the DOS of in the recording film amorphous state with an interface layer is closer to that of the crystalline state than the recording film without an interface layer. From XAFS results, clear differences between amorphous (Amo.) and crystalline states (Cry.) were observed. The interatomic distance of amorphous recording material is independent of the existence of an interface layer. On the other hand, the coordination number varied slightly due to the presence of the interface layer. Therefore, the electronic state of the recording layer changes because of the interface layer, although the local structure changes only slightly except for the coordination number. Combining these results, we conclude that the interface layer changes the electronic state of the recording layer and promotes crystallization, but only affects the local structure of the atomic arrangement slightly.

Cutting Modeling of Hybrid CFRP/Ti Composite with Induced Damage Analysis

PubMed Central

Xu, Jinyang; El Mansori, Mohamed

2016-01-01

In hybrid carbon fiber reinforced polymer (CFRP)/Ti machining, the bi-material interface is the weakest region vulnerable to severe damage formation when the tool cutting from one phase to another phase and vice versa. The interface delamination as well as the composite-phase damage is the most serious failure dominating the bi-material machining. In this paper, an original finite element (FE) model was developed to inspect the key mechanisms governing the induced damage formation when cutting this multi-phase material. The hybrid composite model was constructed by establishing three disparate physical constituents, i.e., the Ti phase, the interface, and the CFRP phase. Different constitutive laws and damage criteria were implemented to build up the entire cutting behavior of the bi-material system. The developed orthogonal cutting (OC) model aims to characterize the dynamic mechanisms of interface delamination formation and the affected interface zone (AIZ). Special focus was made on the quantitative analyses of the parametric effects on the interface delamination and composite-phase damage. The numerical results highlighted the pivotal role of AIZ in affecting the formation of interface delamination, and the significant impacts of feed rate and cutting speed on delamination extent and fiber/matrix failure. PMID:28787824

Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations

NASA Astrophysics Data System (ADS)

Yu, Sheng; Ran, Shunjie; Zhu, Hao; Eshun, Kwesi; Shi, Chen; Jiang, Kai; Gu, Kunming; Seo, Felix Jaetae; Li, Qiliang

2018-01-01

With the advances in two-dimensional (2D) transition metal dichalcogenides (TMDCs) based metal-oxide-semiconductor field-effect transistor (MOSFET), the interface between the semiconductor channel and gate dielectrics has received considerable attention due to its significant impacts on the morphology and charge transport of the devices. In this study, first principle calculations were utilized to investigate the strain effect induced by the interface between crystalline α-Al2O3 (0001)/h-MoS2 monolayer. The results indicate that the 1.3 nm Al2O3 can induce a 0.3% tensile strain on the MoS2 monolayer. The strain monotonically increases with thicker dielectric layers, inducing more significant impact on the properties of MoS2. In addition, the study on temperature effect indicates that the increasing temperature induces monotonic lattice expansion. This study clearly indicates that the dielectric engineering can effectively tune the properties of 2D TMDCs, which is very attractive for nanoelectronics.

Substructure program for analysis of helicopter vibrations

NASA Technical Reports Server (NTRS)

Sopher, R.

1981-01-01

A substructure vibration analysis which was developed as a design tool for predicting helicopter vibrations is described. The substructure assembly method and the composition of the transformation matrix are analyzed. The procedure for obtaining solutions to the equations of motion is illustrated for the steady-state forced response solution mode, and rotor hub load excitation and impedance are analyzed. Calculation of the mass, damping, and stiffness matrices, as well as the forcing function vectors of physical components resident in the base program code, are discussed in detail. Refinement of the model is achieved by exercising modules which interface with the external program to represent rotor induced variable inflow and fuselage induced variable inflow at the rotor. The calculation of various flow fields is discussed, and base program applications are detailed.

Exploring what prompts ITIC to become a superior acceptor in organic solar cell by combining molecular dynamics simulation with quantum chemistry calculation.

PubMed

Pan, Qing-Qing; Li, Shuang-Bao; Duan, Ying-Chen; Wu, Yong; Zhang, Ji; Geng, Yun; Zhao, Liang; Su, Zhong-Min

2017-11-29

The interface characteristic is a crucial factor determining the power conversion efficiency of organic solar cells (OSCs). In this work, our aim is to conduct a comparative study on the interface characteristics between the very famous non-fullerene acceptor, ITIC, and a fullerene acceptor, PC71BM by combining molecular dynamics simulations with density functional theory. Based on some typical interface models of the acceptor ITIC or PC71BM and the donor PBDB-T selected from MD simulation, besides the evaluation of charge separation/recombination rates, the relative positions of Frenkel exciton (FE) states and the charge transfer states along with their oscillator strengths are also employed to estimate the charge separation abilities. The results show that, when compared with those for the PBDB-T/PC71BM interface, the CT states are more easily formed for the PBDB-T/ITIC interface by either the electron transfer from the FE state or direct excitation, indicating the better charge separation ability of the former. Moreover, the estimation of the charge separation efficiency manifests that although these two types of interfaces have similar charge recombination rates, the PBDB-T/ITIC interface possesses the larger charge separation rates than those of the PBDB-T/PC71BM interface. Therefore, the better match between PBDB-T and ITIC together with a larger charge separation efficiency at the interface are considered to be the reasons for the prominent performance of ITIC in OSCs.

Angle-resolved molecular beam scattering of NO at the gas-liquid interface.

PubMed

Zutz, Amelia; Nesbitt, David J

2017-08-07

This study presents first results on angle-resolved, inelastic collision dynamics of thermal and hyperthermal molecular beams of NO at gas-liquid interfaces. Specifically, a collimated incident beam of supersonically cooled NO ( 2 Π 1/2 , J = 0.5) is directed toward a series of low vapor pressure liquid surfaces ([bmim][Tf 2 N], squalane, and PFPE) at θ inc = 45(1)°, with the scattered molecules detected with quantum state resolution over a series of final angles (θ s = -60°, -30°, 0°, 30°, 45°, and 60°) via spatially filtered laser induced fluorescence. At low collision energies [E inc = 2.7(9) kcal/mol], the angle-resolved quantum state distributions reveal (i) cos(θ s ) probabilities for the scattered NO and (ii) electronic/rotational temperatures independent of final angle (θ s ), in support of a simple physical picture of angle independent sticking coefficients and all incident NO thermally accommodating on the surface. However, the observed electronic/rotational temperatures for NO scattering reveal cooling below the surface temperature (T elec < T rot < T S ) for all three liquids, indicating a significant dependence of the sticking coefficient on NO internal quantum state. Angle-resolved scattering at high collision energies [E inc = 20(2) kcal/mol] has also been explored, for which the NO scattering populations reveal angle-dependent dynamical branching between thermal desorption and impulsive scattering (IS) pathways that depend strongly on θ s . Characterization of the data in terms of the final angle, rotational state, spin-orbit electronic state, collision energy, and liquid permit new correlations to be revealed and investigated in detail. For example, the IS rotational distributions reveal an enhanced propensity for higher J/spin-orbit excited states scattered into near specular angles and thus hotter rotational/electronic distributions measured in the forward scattering direction. Even more surprisingly, the average NO scattering angle (⟨θ s ⟩) exhibits a remarkably strong correlation with final angular momentum, N, which implies a linear scaling between net forward scattering propensity and torque delivered to the NO projectile by the gas-liquid interface.

Angle-resolved molecular beam scattering of NO at the gas-liquid interface

NASA Astrophysics Data System (ADS)

Zutz, Amelia; Nesbitt, David J.

2017-08-01

This study presents first results on angle-resolved, inelastic collision dynamics of thermal and hyperthermal molecular beams of NO at gas-liquid interfaces. Specifically, a collimated incident beam of supersonically cooled NO (2 Π 1/2, J = 0.5) is directed toward a series of low vapor pressure liquid surfaces ([bmim][Tf2N], squalane, and PFPE) at θinc = 45(1)°, with the scattered molecules detected with quantum state resolution over a series of final angles (θs = -60°, -30°, 0°, 30°, 45°, and 60°) via spatially filtered laser induced fluorescence. At low collision energies [Einc = 2.7(9) kcal/mol], the angle-resolved quantum state distributions reveal (i) cos(θs) probabilities for the scattered NO and (ii) electronic/rotational temperatures independent of final angle (θs), in support of a simple physical picture of angle independent sticking coefficients and all incident NO thermally accommodating on the surface. However, the observed electronic/rotational temperatures for NO scattering reveal cooling below the surface temperature (Telec < Trot < TS) for all three liquids, indicating a significant dependence of the sticking coefficient on NO internal quantum state. Angle-resolved scattering at high collision energies [Einc = 20(2) kcal/mol] has also been explored, for which the NO scattering populations reveal angle-dependent dynamical branching between thermal desorption and impulsive scattering (IS) pathways that depend strongly on θs. Characterization of the data in terms of the final angle, rotational state, spin-orbit electronic state, collision energy, and liquid permit new correlations to be revealed and investigated in detail. For example, the IS rotational distributions reveal an enhanced propensity for higher J/spin-orbit excited states scattered into near specular angles and thus hotter rotational/electronic distributions measured in the forward scattering direction. Even more surprisingly, the average NO scattering angle (⟨θs⟩) exhibits a remarkably strong correlation with final angular momentum, N, which implies a linear scaling between net forward scattering propensity and torque delivered to the NO projectile by the gas-liquid interface.

Amine treatment induced perovskite nanowire network in perovskite solar cells: efficient surface passivation and carrier transport

NASA Astrophysics Data System (ADS)

Xiao, Ke; Cui, Can; Wang, Peng; Lin, Ping; Qiang, Yaping; Xu, Lingbo; Xie, Jiangsheng; Yang, Zhengrui; Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

2018-02-01

In the fabrication of high efficiency organic-inorganic metal halide perovskite solar cells (PSCs), an additional interface modifier is usually applied for enhancing the interface passivation and carrier transport. In this paper, we develop an innovative method with in-situ growth of one-dimensional perovskite nanowire (1D PNW) network triggered by Lewis amine over the perovskite films. To our knowledge, this is the first time to fabricate PSCs with shape-controlled perovskite surface morphology, which improved power conversion efficiency (PCE) from 14.32% to 16.66% with negligible hysteresis. The amine molecule can passivate the trap states on the polycrystalline perovskite surface to reduce trap-state density. Meanwhile, as a fast channel, the 1D PNWs would promote carrier transport from the bulk perovskite film to the electron transport layer. The PSCs with 1D PNW modification not only exhibit excellent photovoltaic performances, but also show good stability with only 4% PCE loss within 30 days in the ambient air without encapsulation. Our results strongly suggest that in-situ grown 1D PNW network provides a feasible and effective strategy for nanostructured optoelectronic devices such as PSCs to achieve superior performances.

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

NASA Astrophysics Data System (ADS)

Townsend, Nicola J.; Amit, Iddo; Craciun, Monica F.; Russo, Saverio

2018-04-01

The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that is bound to become a crucial ingredient in the future of electronics. To utilise these properties for the prospect of electronics in general, and long-wavelength-based photodetectors in particular, the Schottky barriers formed upon contact with a metal and the contact resistance that arises at these interfaces have to be measured and controlled. We present experimental evidence for the formation of Schottky barriers as low as 10 meV between MoTe2 and metal electrodes. By varying the electrode work functions, we demonstrate that Fermi level pinning due to metal induced gap states at the interfaces occurs at 0.14 eV above the valence band maximum. In this configuration, thermionic emission is observed for the first time at temperatures between 40 K and 75 K. Finally, we discuss the ability to tune the barrier height using a gate electrode.

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

NASA Astrophysics Data System (ADS)

Ferri, Nicola; Ambrosetti, Alberto; Tkatchenko, Alexandre

2017-07-01

Electronic charge rearrangements at interfaces between organic molecules and solid surfaces play a key role in a wide range of applications in catalysis, light-emitting diodes, single-molecule junctions, molecular sensors and switches, and photovoltaics. It is common to utilize electrostatics and Pauli pushback to control the interface electronic properties, while the ubiquitous van der Waals (vdW) interactions are often considered to have a negligible direct contribution (beyond the obvious structural relaxation). Here, we apply a fully self-consistent Tkatchenko-Scheffler vdW density functional to demonstrate that the weak vdW interactions can induce sizable charge rearrangements at hybrid metal/organic systems (HMOS). The complex vdW correlation potential smears out the interfacial electronic density, thereby reducing the charge transfer in HMOS, changes the interface work functions by up to 0.2 eV, and increases the interface dipole moment by up to 0.3 Debye. Our results suggest that vdW interactions should be considered as an additional control parameter in the design of hybrid interfaces with the desired electronic properties.

Amphiphile-Induced Reorganization of Nematic Liquid Crystals at Aqueous Interfaces

NASA Astrophysics Data System (ADS)

Rahimi, Amin; Ramezani-Dakhel, Hadi; Pendery, Joel; Abbott, Nicholas; de Pablo, Juan; Juan de Pablo Team, Prof; Nicholas Abbott Collaboration, Prof

Recent studies have shown that ordering transitions in 4-cyano-4'-pentylbiphenyl (5CB) molecules can be triggered by the self-assembly of specific amphiphiles near a flat aqueous-LC interface. In the absence of adsorbed amphiphiles, LC molecules adopt a parallel orientation at the aqueous interface. Self-assembly of amphiphile molecules at the LC-aqueous interface triggers a spontaneous reorientation of the LC at the aqueous interface. A number of observations indicate that the hydrophilic headgroup of the surfactant has marginal effect on the orientation of 5CB whereas the aliphatic tail structure, length, and conformation greatly affect the ordering of the LC. The structural reorganization of liquid crystals at aqueous interfaces has been primarily ascribed to a weakening of the surface anchoring strength induced by amphiphile molecules. Such explanations, however, have only been supported by a posteriorimicroscopic observations. The underlying mechanism of such an ordering transition and the effect of amphiphile structure remain poorly understood. Here, we study the nature of molecular interactions between amphiphiles, 5CB, and water to understand the mechanism of ordering transitions using atomistic molecular dynamics simulations.

Vibrational sum-frequency generation spectroscopy of ionic liquid 1-butyl-3-methylimidazolium tris(pentafluoroethyl)trifluorophosphate at the air-water interface

NASA Astrophysics Data System (ADS)

Saha, Ankur; SenGupta, Sumana; Kumar, Awadhesh; Choudhury, Sipra; Naik, Prakash D.

2016-08-01

The structure and orientation of room temperature ionic liquid (RTIL) 1-butyl-3-methylimidazolium tris(pentafluoroethyl)trifluorophosphate [PF3(C2F5)3], commonly known as [bmim][fap], have been investigated at the air-[bmim][fap] and air-water interfaces, employing vibrational sum-frequency generation (VSFG) spectroscopy. The VSFG spectra in the CH stretch region suggest presence of the [bmim] cation at the interfaces. Studies reveal that the butyl chain protrudes out into air, and the imidazolium ring lies almost planar to the interface. The CH stretch intensities get enhanced at the air-water interface, mainly because of polar orientation of imidazolium cation induced by interfacial water molecules. The OH stretch intensities are also enhanced at the air-water interface due to polar orientation of interfacial water molecules induced by [bmim][fap]. The Brewster angle microscopy suggests self aggregation of [bmim][fap] in the presence of water, and the aggregation becomes extensive showing dense surface domains with time. However, the surface pressure is almost unaffected due to aggregation.

Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shutthanandan, Vaithiyalingam; Choudhury, Samrat; Manandhar, Sandeep

The interaction of radiation with materials controls the performance, reliability, and safety of many structures in nuclear power systems. Revolutionary improvements in radiation damage resistance may be attainable if methods can be found to manipulate interface properties to give optimal interface stability and point defect recombination capability. To understand how variations in interface properties such as misfit dislocation density and local chemistry affect radiation-induced defect absorption and recombination, a model system of metallic Cr xV 1-x (0 ≤ x ≤ 1) epitaxial films deposited on MgO(001) single crystal substrates has been explored in this paper. By controlling film composition, themore » lattice mismatch between the film and MgO is adjusted to vary the misfit dislocation density at the metal/oxide interface. The stability of these interfaces under various irradiation conditions is studied experimentally and theoretically. The results indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry and the location of the misfit dislocation extra half-plane (in the metal or the oxide) drive radiation-induced defect behavior. Finally, together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials for next-generation nuclear power plants.« less

Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

DOE PAGES

Shutthanandan, Vaithiyalingam; Choudhury, Samrat; Manandhar, Sandeep; ...

2017-04-24

The interaction of radiation with materials controls the performance, reliability, and safety of many structures in nuclear power systems. Revolutionary improvements in radiation damage resistance may be attainable if methods can be found to manipulate interface properties to give optimal interface stability and point defect recombination capability. To understand how variations in interface properties such as misfit dislocation density and local chemistry affect radiation-induced defect absorption and recombination, a model system of metallic Cr xV 1-x (0 ≤ x ≤ 1) epitaxial films deposited on MgO(001) single crystal substrates has been explored in this paper. By controlling film composition, themore » lattice mismatch between the film and MgO is adjusted to vary the misfit dislocation density at the metal/oxide interface. The stability of these interfaces under various irradiation conditions is studied experimentally and theoretically. The results indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry and the location of the misfit dislocation extra half-plane (in the metal or the oxide) drive radiation-induced defect behavior. Finally, together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials for next-generation nuclear power plants.« less

IPPA08 allosterically enhances the action of imidacloprid on nicotinic acetylcholine receptors.

PubMed

Bao, Haibo; Shao, Xusheng; Zhang, Yixi; Cheng, Jiagao; Wang, Yunchao; Xu, Xiaoyong; Fang, Jichao; Liu, Zewen; Li, Zhong

2016-12-01

Our previous study showed that IPPA08, a cis-configuration neonicotinoid compound with unique oxabridged substructure, acted as a specific synergist to neonicotinoid insecticides targeting nicotinic acetylcholine receptors (nAChRs). Heteropentamer nAChRs have diverse characteristics and can form canonical and noncanonical subunit interfaces. While canonical interfaces have been exploited as targets of many drugs, noncanonical interfaces have received less attention. In this study, the mechanism of IPPA08 synergism was evaluated on hybrid nAChRs consisting of three α1 subunits from the brown planthopper and two rat β1 subunits (Nlα1/rβ2) expressed in Xenopus oocytes. IPPA08 alone evoked inward currents, but only at very high concentrations, greater than 1 mM. However, at concentrations below 200 μM, IPPA08 slowed the decay of inward currents evoked by imidacloprid, but not by acetylcholine, and also increased the sensitivity of Nlα1/rβ2 to imidacloprid. Both modulations by IPPA08 were concentration-dependent in the same concentration range of 10-150 μM. Experimentally induced mutations in canonical (α+/β-) and noncanonical (β+/α-) interfaces of Nlα1/rβ2 receptors were also examined to evaluate the presence of possible binding sites for IPPA08 on the receptors. Our results showed that mutations in the canonical interfaces affected only the potency of IPPA08 as an agonist, while mutations in the noncanonical interfaces affected only the synergistic action of IPPA08. Based on these results, we propose that at low concentrations IPPA08 can act as a positive allosteric modulator of noncanonical interfaces, and likely slow the decay of currents through stabilizing the open-channel state caused by the action of imidacloprid on canonical interfaces. Copyright © 2016 Elsevier Ltd. All rights reserved.

Measuring the Thermodynamics of the Alloy/Scale Interface

NASA Technical Reports Server (NTRS)

Copland, Evan

2004-01-01

A method is proposed for the direct measurement of the thermodynamic properties of the alloy and oxide compound at the alloy/scale interface observed during steady-state oxidation. The thermodynamic properties of the alloy/scale interface define the driving force for solid-state transport in the alloy and oxide compound. Accurate knowledge of thermodynamic properties of the interface will advance our understanding of oxidation behavior. The method is based on the concept of local equilibrium and assumes that an alloy+scale equilibrium very closely approximates the alloy/scale interface observed during steady-state oxidation. The thermodynamics activities of this alloy+scale equilibrium are measured directly by Knudsen effusion-cell mass spectrometer (KEMS) using the vapor pressure technique. The theory and some practical considerations of this method are discussed in terms of beta-NiAl oxidation.

Engineering the Membrane/Electrode Interface To Improve the Performance of Solid-State Supercapacitors.

PubMed

Huang, Chun; Zhang, Jin; Snaith, Henry J; Grant, Patrick S

2016-08-17

This paper investigates the effect of adding a 450 nm layer based on porous TiO2 at the interface between a 4.5 μm carbon/TiO2 nanoparticle-based electrode and a polymer electrolyte membrane as a route to improve energy storage performance in solid-state supercapacitors. Electrochemical characterization showed that adding the interface layer reduced charge transfer resistance, promoted more efficient ion transfer across the interface, and significantly improved charge/discharge dynamics in a solid-state supercapacitor, resulting in an increased areal capacitance from 45.3 to 111.1 mF cm(-2) per electrode at 0.4 mA cm(-2).

Colossal super saturation of oxygen at the iron-aluminum interfaces fabricated using solid state welding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridharan, Niyanth; Isheim, D.; Seidman, David N.

Solid state joining is achieved in three steps, (i) interface asperity deformation, (ii) oxide dispersion, followed by (iii) atomic contact and bonding. Atomically clean metallic surfaces without an oxide layer bond spontaneously. Despite its importance the oxide dispersion mechanism is not well studied. In this work the first ever atom probe study of iron-aluminum solid state welds show that the oxygen concentration at the interface is 20 at.%. This is significantly lower than any equilibrium oxide concentration. Here, we therefore propose that the high-strain rate deformation at the interfaces renders the oxide unstable resulting in the observed concentration of oxygen.

Colossal super saturation of oxygen at the iron-aluminum interfaces fabricated using solid state welding

DOE PAGES

Sridharan, Niyanth; Isheim, D.; Seidman, David N.; ...

2016-12-14

Solid state joining is achieved in three steps, (i) interface asperity deformation, (ii) oxide dispersion, followed by (iii) atomic contact and bonding. Atomically clean metallic surfaces without an oxide layer bond spontaneously. Despite its importance the oxide dispersion mechanism is not well studied. In this work the first ever atom probe study of iron-aluminum solid state welds show that the oxygen concentration at the interface is 20 at.%. This is significantly lower than any equilibrium oxide concentration. Here, we therefore propose that the high-strain rate deformation at the interfaces renders the oxide unstable resulting in the observed concentration of oxygen.

Roles of interfacial reaction on mechanical properties of solder interfaces

NASA Astrophysics Data System (ADS)

Liu, Pilin

This study investigated roles of interfacial reaction in fracture and fatigue of solder interconnects. The interfacial reaction phases in the as-reflowed and after aging were examined by cross-sectional transmission electron microscopy (TEM) while interfacial mechanical properties were determined from a flexural peel fracture mechanics technique. Because of their widespread uses in microelectronic packaging, SnPb solder interfaces, and Bi-containing Pb-free solder interfaces were chosen as the subjects of this study. In the interfacial reaction study, we observed a complicated micro structural evolution during solid-state aging of electroless-Ni(P)/SnPb solder interconnects. In as-reflowed condition, the interfacial reaction produced Ni3Sn 4 and P-rich layers. Following overaging, the interfacial microstructure degenerated into a complex multilayer structure consisting of multiple layers of Ni-Sn compounds and transformed Ni-P phases. In SnPb solder interfacial system, fatigue study showed that the overaging of the high P electroless Ni-P/SnPb interconnects resulted in a sharp reduction in the fatigue resistance of the interface in the high crack growth rate regime. Fracture mechanism analysis indicated that the sharp drop in fatigue resistance was triggered by the brittle fracture of the Ni3Sn2 intermetallic phase developed at the overaged interface. The fatigue behavior was strongly dependent on P concentration in electroless Ni. Kirkendall voids were found in the interfacial region after aging, but they did not cause premature fracture of the solder interfaces. In Bi-containing solder interfacial system, we found that Bi segregated to the Cu-intermetallic interface during aging in SnBi/Cu interconnect. This caused serious embrittlement of Sn-Bi/Cu interface. Further aging induced numerous voids along the Cu3Sn/Cu interface. These interfacial voids were different from Kirkendall voids. Their formation was explained on basis of vacancy condensation at the interface as the Bi segregants reduced the number of effective Cu vacancy sink sites and enhanced void nucleation at the interface. The Bi segregation was avoided by replacing the Cu metallization with Ni. It was found that Bi developed a concentration gradient in the Ni 3Sn4 during interfacial reaction, with the Bi concentration falling off to zero as the Ni/IMC interface was approached. Therefore, the inhibition of Bi segregation by Ni was due to the inability of Bi to reach Ni/IMC interface.

Curvature-induced capillary interaction of spherical particles at a liquid interface.

PubMed

Würger, Alois

2006-10-01

We consider a liquid interface with different principal curvatures +/-c and find that the mere presence of a spherical particle leads to a deformation field of quadrupolar symmetry; the corresponding "capillary quadrupole moment" is given by the ratio of the particle size and the curvature radius. The resulting pair interaction of nearby particles is anisotropic and favors the formation of aggregates of cubic symmetry. Since the single-particle trapping energy depends quadratically on curvature with a negative prefactor, a curvature gradient induces a lateral force that pushes the particles towards strongly curved regions of the interface. As an illustration we discuss the effects occurring on a catenoid.

Optical emission of directly contacted copper/sapphire interface under shock compression of megabar

NASA Astrophysics Data System (ADS)

Hao, G. Y.; Liu, F. S.; Zhang, D. Y.; Zhang, M. J.

2007-06-01

The shock-induced optical emission histories from copper/sapphire interface were measured under two different contact conditions, which simulated the typical situations of pyrometry experiments. Results showed that the "peak" feature of the radiation, previously interpreted as the appearance of so-called high-temperature layer, was nearly diminished by finely polishing and uniformly prepressing technique, and that it is possible to directly measure the equilibrium temperature of bulk metal/window interface. Study also demonstrated that the saturated value of the apparent temperature in nonideal contact situation is related to the color temperature of the shock-induced "bright spot" in sapphire window under megabar pressures.

Interface states, negative differential resistance, and rectification in molecular junctions with transition-metal contacts

NASA Astrophysics Data System (ADS)

Dalgleish, Hugh; Kirczenow, George

2006-06-01

We present a theory of nonlinear transport phenomena in molecular junctions where single thiolated organic molecules bridge transition metal nanocontacts whose densities of states have strong d orbital components near the Fermi level. At moderate bias, we find electron transmission between the contacts to be mediated by interface states within the molecular highest-occupied-molecular-orbital-lowest-unoccupied-molecular-orbital gap that arise from hybridization between the thiol-terminated ends of the molecules and the d orbitals of the transition metals. Because these interface states are localized mainly within the metal electrodes, we find their energies to accurately track the electrochemical potentials of the contacts when a variable bias is applied across the junction. We predict resonant enhancement and reduction of the interface state transmission as the applied bias is varied, resulting in negative differential resistance (NDR) in molecular junctions with Pd nanocontacts. We show that these nonlinear phenomena can be tailored by suitably choosing the nanocontact materials: If a Rh electrode is substituted for one Pd contact, we predict enhancement of these NDR effects. The same mechanism is also predicted to give rise to rectification in Pd/molecule/Au junctions. The dependences of the interface state resonances on the orientation of the metal interface, the adsorption site of the molecule, and the separation between the thiolated ends of the molecule and the metal contacts are also discussed.

Surface Magnetism of Cobalt Nanoislands Controlled by Atomic Hydrogen

DOE PAGES

Park, Jewook; Park, Changwon; Yoon, Mina; ...

2016-12-01

Controlling the spin states of the surface and interface is key to spintronic applications of magnetic materials. We report the evolution of surface magnetism of Co nanoislands on Cu(111) upon hydrogen adsorption and desorption with the hope of realizing reversible control of spin-dependent tunneling. Spin-polarized scanning tunneling microscopy reveals three types of hydrogen-induced surface superstructures, 1H-(2 × 2), 2H-(2 × 2), and 6H-(3 × 3), with increasing H coverage. The prominent magnetic surface states of Co, while being preserved at low H coverage, become suppressed as the H coverage level increases, which can then be recovered by H desorption. First-principlesmore » calculations reveal the origin of the observed magnetic surface states by capturing the asymmetry between the spin-polarized surface states and identify the role of hydrogen in controlling the magnetic states. This study offers new insights into the chemical control of magnetism in low-dimensional systems.« less

Depth-Dependent Defect Studies Using Coherent Acoustic Phonons

DTIC Science & Technology

2014-09-29

using CAP waves as an active moving interface to induce local changes in electric, acoustic , and optical properties. This is able to generate ultrafast...the elastic strain component [6]. b) Modification of the crystal lattice due to transient strain caused by the coherent acoustic phonon wave . The...opto-electronic properties of materials. We are also using CAP waves as an active moving interface to induce local changes in electric, acoustic , and

The Characteristics of LTP Induced in Hippocampal Slices Are Dependent on Slice-Recovery Conditions

ERIC Educational Resources Information Center

Godaux, Emile; Ris, Laurence; Capron, Brigitte; Sindic, Christian

2006-01-01

In area CA1 of hippocampal slices which are allowed to recover from slicing "in interface" and where recordings are carried out in interface, a single 1-sec train of 100-Hz stimulation triggers a short-lasting long-term potentiation (S-LTP), which lasts 1-2 h, whereas multiple 1-sec trains induce a long-lasting LTP (L-LTP), which lasts several…

Numerical investigation on the self-induced unsteadiness in tip leakage flow of a micro-axial fan rotor

NASA Astrophysics Data System (ADS)

Chen, Jinxin; Lai, Huanxin

2015-06-01

The self-induced unsteadiness in tip leakage flow (TLF) of a micro-axial fan rotor is numerically studied by solvingReynolds-averaged Navier-Stokes equations. The micro-axial fan, which is widely used in cooling systems of electronic devices, has a tip clearance of 6% of the axial chord length of the blade. At the design rotation speed, four cases near the peak efficiency point (PEP) with self-induced unsteadiness and four steady cases which have much weaker pressure fluctuations are investigated Using the "interface" separating the incoming main flow and the TLF defined by Du et al. [1], an explanation based on the propagation of the low energy spot and its multi-passing through the high gradient zone of the relativetotal pressure, is proposed to clarify the originating mechanism of the unsteadiness. At the operating points near the PEP, the main flow is weaker than the TLF and the interface moves upstream. The low energy spot which propagates along in the close behind of the interface has opportunity to circulate in the circumferential direction and passes through the sensitive interfaces several times, a slight perturbation therefore may be magnified significantlyand develops into the self-induced unsteadiness. The explanation is demonstrated by numerical results

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

NASA Astrophysics Data System (ADS)

Jung, A.; Zhang, Y.; Arroyo Rojas Dasilva, Y.; Isa, F.; von Känel, H.

2018-02-01

We study covalent bonds between p-doped Si wafers (resistivity ˜10 Ω cm) fabricated on a recently developed 200 mm high-vacuum system. Oxide- and void free interfaces were obtained by argon (Ar) or neon (Ne) sputtering prior to wafer bonding at room temperature. The influence of the sputter induced amorphous Si layer at the bonding interface on the electrical behavior is accessed with temperature-dependent current-voltage measurements. In as-bonded structures, charge transport is impeded by a potential barrier of 0.7 V at the interface with thermionic emission being the dominant charge transport mechanism. Current-voltage characteristics are found to be asymmetric which can tentatively be attributed to electric dipole formation at the interface as a result of the time delay between the surface preparation of the two bonding partners. Electron beam induced current measurements confirm the corresponding asymmetric double Schottky barrier like band-alignment. Moreover, we demonstrate that defect annihilation at a low temperature of 400 °C increases the electrical conductivity by up to three orders of magnitude despite the lack of recrystallization of the amorphous layer. This effect is found to be more pronounced for Ne sputtered surfaces which is attributed to the lighter atomic mass compared to Ar, inducing weaker lattice distortions during the sputtering.

Irradiation Induced Microstructure Evolution in Nanostructured Materials: A Review

PubMed Central

Liu, Wenbo; Ji, Yanzhou; Tan, Pengkang; Zang, Hang; He, Chaohui; Yun, Di; Zhang, Chi; Yang, Zhigang

2016-01-01

Nanostructured (NS) materials may have different irradiation resistance from their coarse-grained (CG) counterparts. In this review, we focus on the effect of grain boundaries (GBs)/interfaces on irradiation induced microstructure evolution and the irradiation tolerance of NS materials under irradiation. The features of void denuded zones (VDZs) and the unusual behavior of void formation near GBs/interfaces in metals due to the interactions between GBs/interfaces and irradiation-produced point defects are systematically reviewed. Some experimental results and calculation results show that NS materials have enhanced irradiation resistance, due to their extremely small grain sizes and large volume fractions of GBs/interfaces, which could absorb and annihilate the mobile defects produced during irradiation. However, there is also literature reporting reduced irradiation resistance or even amorphization of NS materials at a lower irradiation dose compared with their bulk counterparts, since the GBs are also characterized by excess energy (compared to that of single crystal materials) which could provide a shift in the total free energy that will lead to the amorphization process. The competition of these two effects leads to the different irradiation tolerance of NS materials. The irradiation-induced grain growth is dominated by irradiation temperature, dose, ion flux, character of GBs/interface and nanoprecipitates, although the decrease of grain sizes under irradiation is also observed in some experiments. PMID:28787902

Superconductivity and ferromagnetism in topological insulators

NASA Astrophysics Data System (ADS)

Zhang, Duming

Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to exist when topological insulators are interfaced with superconductors. The observation of Majorana fermions would not only be fundamentally important, but would also lead to applications in fault-tolerant topological quantum computation. By interfacing topological insulator nanoribbons with superconducting electrodes, we observe distinct signatures of proximity-induced superconductivity, which is found to be present in devices with channel lengths that are much longer than the normal transport characteristic lengths. This might suggest preferential coupling of the proximity effect to a ballistic surface channel of the topological insulator. In addition, when the electrodes are in the superconducting state, we observe periodic magnetoresistance oscillations which suggest the formation of vortices in the proximity-induced region of the nanoribbons. Our results demonstrate that proximity-induced superconductivity and vortices can be realized in our nanoribbon geometry, which accomplishes a first important step towards the search for Majorana fermions in condensed matter. In Chapter 5, I will discuss experiments on a magnetically-doped topological insulator (Mn-doped Bi2Se3) to induce a surface state gap. The metallic Dirac cone surface states of a topological insulator are expected to be protected against small perturbations by time-reversal symmetry. However, these surface states can be dramatically modified and a finite energy gap can be opened at the Dirac point by breaking the time-reversal symmetry via magnetic doping. The interplay between magnetism and topological surface states is predicted to yield novel phenomena of fundamental interest such as a topological magneto-electric effect, a quantized anomalous Hall effect, and the induction of magnetic monopoles. Our systematic measurements reveal a close correlation between the onset of ferromagnetism and quantum corrections to diffusive transport, which crosses over from the symplectic (weak anti-localization) to the unitary (weak localization) class. A comprehensive interpretation of data obtained from electrical transport, angle-resolved photoemission spectroscopy, superconducting quantum interference device magnetometry, and scanning tunneling microscopy indicates that the ferromagnetism responsible for modifications in the surface states occurs in nanoscale regions on the surface where magnetic atoms segregate during sample growth. This suggests that some aspects of the observed magnetoconductance may indeed originate from surface transport despite the non-ideal nature of the samples. These observations are consistent with the prediction of a time-reversal symmetry breaking gap, which is further supported by angle-resolved photoemission spectroscopy measurements.

Interface coupling-induced enhancement of magnetoimpedance effect in heterogeneous nanobrush by adjusting textures of Co nanowires

PubMed Central

2013-01-01

Interface coupling-induced and interface coupling-enhanced magnetoimpedance (MI) effect in heterogeneous nanobrush has been investigated. The nanobrush is composed of Fe25Ni75 nanofilm and textured hexagonal close-packed cobalt nanowire array, respectively fabricated by RF magnetron sputtering and electrochemical deposition. The design of this structure is based on the vortex distribution of magnetic moments in thin film, which can be induced by the exchange coupling effect at the interfaces of the nanobrush. The texture of nanowires plays an important role in the MI effect of the nanobrush, which is regulated by controlling the pH values and temperatures of the deposition process. The ‘parallel’ and ‘perpendicular’ coupling models were used to explain the different MI results of the nanobrush with cobalt nanowires, which have (100) and (002) textures, respectively. The optimized MI effect of the nanobrush brought by (100) nanowires can be magnified by 300% with more than 80%/Oe magnetic sensitivity at a low frequency, which has great application potentials in low-frequency MI sensors. PMID:24207011

Interface-induced multiferroism by design in complex oxide superlattices

DOE PAGES

Guo, Hangwen; Wang, Zhen; Dong, Shuai; ...

2017-05-19

Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La 2/3Sr 1/3MnO 3 (LSMO)/BaTiO 3 (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacingmore » with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin–lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin–lattice coupling.« less

Bioinspired super-antiwetting interfaces with special liquid-solid adhesion.

PubMed

Liu, Mingjie; Zheng, Yongmei; Zhai, Jin; Jiang, Lei

2010-03-16

Super-antiwetting interfaces, such as superhydrophobic and superamphiphobic surfaces in air and superoleophobic interfaces in water, with special liquid-solid adhesion have recently attracted worldwide attention. Through tuning surface microstructures and compositions to achieve certain solid/liquid contact modes, we can effectively control the liquid-solid adhesion in a super-antiwetting state. In this Account, we review our recent progress in the design and fabrication of these bioinspired super-antiwetting interfaces with special liquid-solid adhesion. Low-adhesion superhydrophobic surfaces are biologically inspired, typically by the lotus leaf. Wettability investigated at micro- and nanoscale reveals that the low adhesion of the lotus surface originates from the composite contact mode, a microdroplet bridging several contacts, within the hierarchical structures. Recently high-adhesion superhydrophobic surfaces have also attracted research attention. These surfaces are inspired by the surfaces of gecko feet and rose petals. Accordingly, we propose two biomimetic approaches for the fabrication of high-adhesion superhydrophobic surfaces. First, to mimic a sticky gecko's foot, we designed structures with nanoscale pores that could trap air isolated from the atmosphere. In this case, the negative pressure induced by the volume change of sealed air as the droplet is pulled away from surface can produce a normal adhesive force. Second, we constructed microstructures with size and topography similar to that of a rose petal. The resulting materials hold air gaps in their nanoscale folds, controlling the superhydrophobicity in a Wenzel state on the microscale. Furthermore, we can tune the liquid-solid adhesion on the same superhydrophobic surface by dynamically controlling the orientations of microstructures without altering the surface composition. The superhydrophobic wings of the butterfly (Morpho aega) show directional adhesion: a droplet easily rolls off the surface of wings along one direction but is pinned tightly against rolling in the opposite direction. Through coordinating the stimuli-responsive materials and appropriate surface-geometry structures, we developed materials with reversible transitions between a low-adhesive rolling state and a high-adhesive pinning state for water droplets on the superhydrophobic surfaces, which were controlled by temperature and magnetic and electric fields. In addition to the experiments done in air, we also demonstrated bioinspired superoleophobic water/solid interfaces with special adhesion to underwater oil droplets and platelets. In these experiments, the high content of water trapped in the micro- and nanostructures played a key role in reducing the adhesion of the oil droplets and platelets. These findings will offer innovative insights into the design of novel antibioadhesion materials.

Dominant Majorana bound energy and critical current enhancement in ferromagnetic-superconducting topological insulator

NASA Astrophysics Data System (ADS)

Khezerlou, Maryam; Goudarzi, Hadi; Asgarifar, Samin

2017-03-01

Among the potential applications of topological insulators, we theoretically study the coexistence of proximity-induced ferromagnetic and superconducting orders in the surface states of a 3-dimensional topological insulator. The superconducting electron-hole excitations can be significantly affected by the magnetic order induced by a ferromagnet. In one hand, the surface state of the topological insulator, protected by the time-reversal symmetry, creates a spin-triplet and, on the other hand, magnetic order causes to renormalize the effective superconducting gap. We find Majorana mode energy along the ferromagnet/superconductor interface to sensitively depend on the magnitude of magnetization m zfs from superconductor region, and its slope around perpendicular incidence is steep with very low dependency on m zfs . The superconducting effective gap is renormalized by a factor η( m zfs ), and Andreev bound state in ferromagnet-superconductor/ferromagnet/ferromagnet-superconductor (FS/F/FS) Josephson junction is more sensitive to the magnitude of magnetizations of FS and F regions. In particular, we show that the presence of m zfs has a noticeable impact on the gap opening in Andreev bound state, which occurs in finite angle of incidence. This directly results in zero-energy Andreev state being dominant. By introducing the proper form of corresponding Dirac spinors for FS electron-hole states, we find that via the inclusion of m zfs , the Josephson supercurrent is enhanced and exhibits almost abrupt crossover curve, featuring the dominant zero-energy Majorana bound states.

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

NASA Astrophysics Data System (ADS)

Le, Son Phuong; Nguyen, Duong Dai; Suzuki, Toshi-kazu

2018-01-01

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of Al2O3 and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences of threshold voltages for the MIS devices, we evaluated positive interface fixed charges, whose density at the AlTiO/AlGaN interface is significantly lower than that at the Al2O3/AlGaN interface. This and a higher dielectric constant of AlTiO lead to rather shallower threshold voltages for the AlTiO gate dielectric than for Al2O3. The lower interface fixed charge density also leads to the fact that the two-dimensional electron concentration is a decreasing function of the insulator thickness for AlTiO, whereas being an increasing function for Al2O3. Moreover, we discuss the relationship between the interface fixed charges and interface states. From the conductance method, it is shown that the interface state densities are very similar at the Al2O3/AlGaN and AlTiO/AlGaN interfaces. Therefore, we consider that the lower AlTiO/AlGaN interface fixed charge density is not owing to electrons trapped at deep interface states compensating the positive fixed charges and can be attributed to a lower density of oxygen-related interface donors.

Gate-Induced Metal–Insulator Transition in MoS 2 by Solid Superionic Conductor LaF 3

DOE PAGES

Wu, Chun-Lan; Yuan, Hongtao; Li, Yanbin; ...

2018-03-23

Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 10 14 cm –2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, wemore » demonstrate an all solid-state EDL device based on a solid superionic conductor LaF 3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF 3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS 2. Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS 2 transistors. Finally, this result shows the powerful gating capability of LaF 3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.« less

Enhancing performance of a motor imagery based brain-computer interface by incorporating electrical stimulation-induced SSSEP

NASA Astrophysics Data System (ADS)

Yi, Weibo; Qiu, Shuang; Wang, Kun; Qi, Hongzhi; Zhao, Xin; He, Feng; Zhou, Peng; Yang, Jiajia; Ming, Dong

2017-04-01

Objective. We proposed a novel simultaneous hybrid brain-computer interface (BCI) by incorporating electrical stimulation into a motor imagery (MI) based BCI system. The goal of this study was to enhance the overall performance of an MI-based BCI. In addition, the brain oscillatory pattern in the hybrid task was also investigated. Approach. 64-channel electroencephalographic (EEG) data were recorded during MI, selective attention (SA) and hybrid tasks in fourteen healthy subjects. In the hybrid task, subjects performed MI with electrical stimulation which was applied to bilateral median nerve on wrists simultaneously. Main results. The hybrid task clearly presented additional steady-state somatosensory evoked potential (SSSEP) induced by electrical stimulation with MI-induced event-related desynchronization (ERD). By combining ERD and SSSEP features, the performance in the hybrid task was significantly better than in both MI and SA tasks, achieving a ~14% improvement in total relative to the MI task alone and reaching ~89% in mean classification accuracy. On the contrary, there was no significant enhancement obtained in performance while separate ERD feature was utilized in the hybrid task. In terms of the hybrid task, the performance using combined feature was significantly better than using separate ERD or SSSEP feature. Significance. The results in this work validate the feasibility of our proposed approach to form a novel MI-SSSEP hybrid BCI outperforming a conventional MI-based BCI through combing MI with electrical stimulation.

Interdimensional effects in systems with quasirelativistic fermions

NASA Astrophysics Data System (ADS)

Zulkoskey, A. C.; Dick, R.; Tanaka, K.

2017-07-01

We examine the Green function and the density of states for fermions moving in three-dimensional Dirac materials with interfaces which affect the propagation properties of particles. Motivation for our research comes from interest in materials that exhibit quasirelativistic dispersion relations. By modifying Dirac-type contributions to the Hamiltonian in an interface we are able to calculate the Green function and the density of states. The density of states inside the interface exhibits interpolating behavior between two and three dimensions, with two-dimensional behavior at high energies and three-dimensional behavior at low energies, provided that the shift in the mass parameter in the interface is small. We also discuss the impact of the interpolating density of states on optical absorption in Dirac materials with a two-dimensional substructure.

Electro-convective versus electroosmotic instability in concentration polarization.

PubMed

Rubinstein, Isaak; Zaltzman, Boris

2007-10-31

Electro-convection is reviewed as a mechanism of mixing in the diffusion layer of a strong electrolyte adjacent to a charge-selective solid, such as an ion exchange (electrodialysis) membrane or an electrode. Two types of electro-convection in strong electrolytes may be distinguished: bulk electro-convection, due to the action of the electric field upon the residual space charge of a quasi-electro-neutral bulk solution, and convection induced by electroosmotic slip, due to electric forces acting in the thin electric double layer of either quasi-equilibrium or non-equilibrium type near the solid/liquid interface. According to recent studies, the latter appears to be the likely source of mixing in the diffusion layer, leading to 'over-limiting' conductance in electrodialysis. Electro-convection near a planar uniform charge selective solid/liquid interface sets on as a result of hydrodynamic instability of one-dimensional steady state electric conduction through such an interface. We compare the results of linear stability analysis obtained for instabilities of this kind appearing in the full electro-convective and limiting non-equilibrium electroosmotic formulations. The short- and long-wave aspects of these instabilities are discussed along with the wave number selection principles.

Hydrated proton and hydroxide charge transfer at the liquid/vapor interface of water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soniat, Marielle; Rick, Steven W., E-mail: srick@uno.edu; Kumar, Revati

2015-07-28

The role of the solvated excess proton and hydroxide ions in interfacial properties is an interesting scientific question with applications in a variety of aqueous behaviors. The role that charge transfer (CT) plays in interfacial behavior is also an unsettled question. Quantum calculations are carried out on clusters of water with an excess proton or a missing proton (hydroxide) to determine their CT. The quantum results are applied to analysis of multi-state empirical valence bond trajectories. The polyatomic nature of the solvated excess proton and hydroxide ion results in directionally dependent CT, depending on whether a water molecule is amore » hydrogen bond donor or acceptor in relation to the ion. With polyatomic molecules, CT also depends on the intramolecular bond distances in addition to intermolecular distances. The hydrated proton and hydroxide affect water’s liquid/vapor interface in a manner similar to monatomic ions, in that they induce a hydrogen-bonding imbalance at the surface, which results in charged surface waters. This hydrogen bond imbalance, and thus the charged waters at the surface, persists until the ion is at least 10 Å away from the interface.« less

Mixing and transient interface condensation of a liquid hydrogen tank

NASA Technical Reports Server (NTRS)

Lin, C. S.; Hasan, M. M.; Nyland, T. W.

1993-01-01

Experiments were conducted to investigate the effect of axial jet-induced mixing on the pressure reduction of a thermally stratified liquid hydrogen tank. The tank was nearly cylindrical, having a volume of about 0.144 cu m with 0.559 m in diameter and 0.711 m length. A mixer/pump unit, which had a jet nozzle outlet of 0.0221 m in diameter was located 0.178 m from the tank bottom and was installed inside the tank to generate the axial jet mixing and tank fluid circulation. Mixing tests began with the tank pressures at which the thermal stratification results in 4.9-6.2 K liquid subcooling. The mixing time and transient vapor condensation rate at the liquid-vapor interface are determined. Two mixing time correlations, based on the thermal equilibrium and pressure equilibrium, are developed and expressed as functions of system and buoyancy parameters. The limited liquid hydrogen data of the present study shows that the modified steady state condensation rate correlation may be used to predict the transient condensation rate in a mixing process if the instantaneous values of jet sub cooling and turbulence intensity at the interface are employed.

Pattern formation study of dissolution-driven convection

NASA Astrophysics Data System (ADS)

Aljahdaly, Noufe; Hadji, Layachi

2017-11-01

A three-dimensional pattern formation analysis is performed to investigate the dissolution-driven convection induced by the sequestration of carbon dioxide. We model this situation by considering a Rayleigh-Taylor like base state consisting of carbon-rich heavy brine overlying a carbon-free layer and seek, through a linear stability analysis, the instability threshold conditions as function of the thickness of the CO2-rich brine layer. Our model accounts for carbon diffusion anisotropy, permeability dependence on depth and the presence of a first order chemical reaction between the carbon-rich brine and host mineralogy. A small amplitude nonlinear stability analysis is performed to isolate the preferred regular pattern and solute flux conditions at the interface. The latter are used to derive equations for the time and space evolution of the interface as it migrates upward. We quantify the terminal time when the interface reaches the top boundary as function of the type of solute boundary conditions at the top boundary thereby also quantifying the beginning of the shutdown regime. The analysis will also shed light on the development of the three-dimensional fingering pattern that is observed when the constant flux regime is attained.

Superstructures at Te/Au(111) interface evolving upon increasing Te coverage

NASA Astrophysics Data System (ADS)

Guan, Jiaqi; Huang, Xiaochun; Xu, Xiaofeng; Zhang, Shuyuan; Jia, Xun; Zhu, Xuetao; Wang, Weihua; Guo, Jiandong

2018-03-01

By in-situ low temperature scanning tunneling microscopy, we systematically investigated the superstructure evolution at Te/Au(111) interface upon increasing Te coverage. Te atoms form one-dimensional √{ 3} R30∘ chains at ∼0.10 monolayer (ML) coverage. Two two-dimensional chiral superstructures, (√{ 111} ×√{ 111}) R 4 .7∘ and (3√{ 21} × 3√{ 21}) R 10 .9∘ , are selectively formed with the Te coverage below and above 1/3 ML, respectively. The two chiral superstructures can be converted to each other reversibly by adding Te atoms or moderately annealing. A honeycomb-like superstructure, decorated with adatoms that are distributed in quasi-one-dimensional chains, is observed by further increasing the Te coverage to 4/9 ML. At the Te/Au(111) interface, an interfacial state at -0.65 eV to -0.55 eV below the Fermi level is also resolved by scanning tunneling spectroscopy. The formation of these Te-induced high-order superstructures is accompanied by relaxation of gold atoms in the surface layer, indicating a strong Te-Au interaction. Our work demonstrates a reliable method to fabricate Te nanostructures on noble metals in a controlled way.

Induced Ferromagnetism at BiFeO 3/YBa 2Cu 3O 7 Interfaces

DOE PAGES

Zhu, Jian-Xin; Wen, Xiao-Dong; Haraldsen, J. T.; ...

2014-06-20

We report that transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO 3/YBa 2Cu 3O 7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFeO 3, we are able to show that a metallic ferromagnetism is induced near the interface. We further develop an interface exchange-coupling model and place the extracted exchange coupling interactionmore » strengths, from the first-principles calculations, into a resultant generic phase diagram. Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hysteresis loop in field-dependent magnetization data. Lastly, the emergence of interfacial ferromagnetism should have implications to electronic and transport properties.« less

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces.

PubMed

Gurbán, S; Petrik, P; Serényi, M; Sulyok, A; Menyhárd, M; Baradács, E; Parditka, B; Cserháti, C; Langer, G A; Erdélyi, Z

2018-02-01

Al 2 O 3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10 -9 mbar) and formation of amorphous SiO 2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al 2 O 3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO 2 rich layer has grown into the Al 2 O 3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.

Maillard Conjugation of Sodium Alginate to Whey Protein for Enhanced Resistance to Surfactant-Induced Competitive Displacement from Air-Water Interfaces.

PubMed

Cai, Bingqing; Saito, Anna; Ikeda, Shinya

2018-01-24

Whey protein adsorbed to an interface forms a viscoelastic interfacial film but is displaced competitively from the interface by a small-molecule surfactant added afterward. The present study evaluated the impact of the covalent conjugation of high- or low-molecular-weight sodium alginate (HA or LA) to whey protein isolate (WPI) via the Maillard reaction on the ability of whey protein to resist surfactant-induced competitive displacement from the air-water interface. Surfactant added after the pre-adsorption of conjugate to the interface increased surface pressure. At a given surface pressure, the WPI-LA conjugate showed a significantly higher interfacial area coverage and lower interfacial film thickness compared to those of the WPI-HA conjugate or unconjugated WPI. The addition of LA to the aqueous phase had little effect on the interfacial area and thickness of pre-adsorbed WPI. These results suggest the importance of the molecular weight of the polysaccharide moiety in determining interfacial properties of whey protein-alginate conjugates.

Phase transition of LB films of mixed diblock copolymer at the air/water interface

NASA Astrophysics Data System (ADS)

Seo, Y. S.; Kim, K. S.; Samuilov, V.; Rafailovich, M. H.; Sokolov, J.; Lammertink, Rob G. H.; Vancso, G. J.

2000-03-01

We have studied the morphology of Langmuir blodgett films at the air/water interface of mixed diblock copolymer films. Solutions of poly(styrene-b-ferrocenyldimethylsilane) and PS-b-P2VP mixed in a ratio of 20/80 in chloroform were spread at the air/water interface. The morphology of the films was studied with AFM as a function of the surface pressure and the diblock copolymer molecular weight. The results show that the two diblock copolymers can be induced to mix at the air/water interface with increasing surface pressure. A reversible transition from spherical to cylindrical morphologies is induced in the mixture which can not be observed in films formed of the two components separately. The effective surface phase diagram as a function of block copolymer composition and pressure will be presented.

Driving force behind adsorption-induced protein unfolding: a time-resolved X-ray reflectivity study on lysozyme adsorbed at an air/water interface.

PubMed

Yano, Yohko F; Uruga, Tomoya; Tanida, Hajime; Toyokawa, Hidenori; Terada, Yasuko; Takagaki, Masafumi; Yamada, Hironari

2009-01-06

Time-resolved X-ray reflectivity measurements for lysozyme (LSZ) adsorbed at an air/water interface were performed to study the mechanism of adsorption-induced protein unfolding. The time dependence of the density profile at the air/water interface revealed that the molecular conformation changed significantly during adsorption. Taking into account previous work using Fourier transform infrared (FTIR) spectroscopy, we propose that the LSZ molecules initially adsorbed on the air/water interface have a flat unfolded structure, forming antiparallel beta-sheets as a result of hydrophobic interactions with the gas phase. In contrast, as adsorption continues, a second layer forms in which the molecules have a very loose structure having random coils as a result of hydrophilic interactions with the hydrophilic groups that protrude from the first layer.

Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties

NASA Astrophysics Data System (ADS)

Lee, Kin Kiong; Wang, Danna; Shinobu, Onoda; Ohshima, Takeshi

2018-04-01

Radiation-induced charge trapping and interface traps in n-channel ZnO thin film transistors are characterised as a function of total dose and irradiation bias following exposure to gamma-rays. Devices were irradiated up to ∼60 kGy(SiO?) and the electrical characteristic exhibits two distinct regimes. In the first regime, up to a total dose of 40 kGy(SiO?), the threshold voltage increases positively. However, in the second regime with irradiation greater than 40 kGy(SiO?), the threshold voltage moves in the opposite direction. This reversal of threshold voltage is attributed to the influence of the radiation-induced interface and oxide- charge, in which both have opposite polarity, on the electrical performance of the transistors. In the first regime, the generation of the oxide- charge is initially greater than the density of interface traps and caused a positive shift. In the second regime, when the total doses were greater than 40 kGy(SiO?), the radiation-induced interface traps are greater than the density of oxide- charge and caused the threshold voltage to switch direction. Further, the generated interface traps contributed to the degradation of the effective channel mobility, whereas the density of traps at the grain-boundaries did not increase significantly upon irradiation. Isothermal annealing of the devices at 363 K results in a reduction in the trap density and an improvement of the effective channel mobility to ∼90% of its pre-irradiation value.

Accessing the bottleneck in all-solid state batteries, lithium-ion transport over the solid-electrolyte-electrode interface.

PubMed

Yu, Chuang; Ganapathy, Swapna; Eck, Ernst R H van; Wang, Heng; Basak, Shibabrata; Li, Zhaolong; Wagemaker, Marnix

2017-10-20

Solid-state batteries potentially offer increased lithium-ion battery energy density and safety as required for large-scale production of electrical vehicles. One of the key challenges toward high-performance solid-state batteries is the large impedance posed by the electrode-electrolyte interface. However, direct assessment of the lithium-ion transport across realistic electrode-electrolyte interfaces is tedious. Here we report two-dimensional lithium-ion exchange NMR accessing the spontaneous lithium-ion transport, providing insight on the influence of electrode preparation and battery cycling on the lithium-ion transport over the interface between an argyrodite solid-electrolyte and a sulfide electrode. Interfacial conductivity is shown to depend strongly on the preparation method and demonstrated to drop dramatically after a few electrochemical (dis)charge cycles due to both losses in interfacial contact and increased diffusional barriers. The reported exchange NMR facilitates non-invasive and selective measurement of lithium-ion interfacial transport, providing insight that can guide the electrolyte-electrode interface design for future all-solid-state batteries.

Inhomogeneous screening of gate electric field by interface states in graphene FETs

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2017-09-01

The electronic states at graphene-SiO2 interface and their inhomogeneity is investigated using the back-gate-voltage dependence of local tunnel spectra acquired with a scanning tunneling microscope. The conductance spectra show two, or occasionally three, minima that evolve along the bias-voltage axis with the back gate voltage. This evolution is modeled using tip-gating and interface states. The energy dependent interface states’ density, Dit(E) , required to model the back-gate evolution of the minima, is found to have significant inhomogeneity in its energy-width. A broad Dit(E) leads to an effect similar to a reduction in the Fermi velocity while the narrow Dit(E) leads to the pinning of the Fermi energy close to the Dirac point, as observed in some places, due to enhanced screening of the gate electric field by the narrow Dit(E) . Finally, this also demonstrates STM as a tool to probe the density of interface states in various 2D Dirac materials.

Entanglement evolution across a conformal interface

NASA Astrophysics Data System (ADS)

Wen, Xueda; Wang, Yuxuan; Ryu, Shinsei

2018-05-01

For two-dimensional conformal field theories (CFTs) in the ground state, it is known that a conformal interface along the entanglement cut can suppress the entanglement entropy from to , where L is the length of the subsystem A, and is the effective central charge which depends on the transmission property of the conformal interface. In this work, by making use of conformal mappings, we show that a conformal interface has the same effect on entanglement evolution in non-equilibrium cases, including global, local and certain inhomogeneous quantum quenches. I.e. a conformal interface suppresses the time evolution of entanglement entropy by effectively replacing the central charge c with , where is exactly the same as that in the ground state case. We confirm this conclusion by a numerical study on a critical fermion chain. Furthermore, based on the quasi-particle picture, we conjecture that this conclusion holds for an arbitrary quantum quench in CFTs, as long as the initial state can be described by a regularized conformal boundary state.

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

PubMed

Zhang, Zhaofu; Cao, Ruyue; Wang, Changhong; Li, Hao-Bo; Dong, Hong; Wang, Wei-Hua; Lu, Feng; Cheng, Yahui; Xie, Xinjian; Liu, Hui; Cho, Kyeongjae; Wallace, Robert; Wang, Weichao

2015-03-11

The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms.

Immature, Semi-Mature, and Fully Mature Dendritic Cells: Toward a DC-Cancer Cells Interface That Augments Anticancer Immunity

PubMed Central

Dudek, Aleksandra M.; Martin, Shaun; Garg, Abhishek D.; Agostinis, Patrizia

2013-01-01

Dendritic cells (DCs) are the sentinel antigen-presenting cells of the immune system; such that their productive interface with the dying cancer cells is crucial for proper communication of the “non-self” status of cancer cells to the adaptive immune system. Efficiency and the ultimate success of such a communication hinges upon the maturation status of the DCs, attained following their interaction with cancer cells. Immature DCs facilitate tolerance toward cancer cells (observed for many apoptotic inducers) while fully mature DCs can strongly promote anticancer immunity if they secrete the correct combinations of cytokines [observed when DCs interact with cancer cells undergoing immunogenic cell death (ICD)]. However, an intermediate population of DC maturation, called semi-mature DCs exists, which can potentiate either tolerogenicity or pro-tumorigenic responses (as happens in the case of certain chemotherapeutics and agents exerting ambivalent immune reactions). Specific combinations of DC phenotypic markers, DC-derived cytokines/chemokines, dying cancer cell-derived danger signals, and other less characterized entities (e.g., exosomes) can define the nature and evolution of the DC maturation state. In the present review, we discuss these different maturation states of DCs, how they might be attained and which anticancer agents or cell death modalities (e.g., tolerogenic cell death vs. ICD) may regulate these states. PMID:24376443

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

Electrical potential induced switchable wettability of super-aligned carbon nanotube films

NASA Astrophysics Data System (ADS)

Zhang, Guang; Duan, Zheng; Wang, Qinggong; Li, Long; Yao, Wei; Liu, Changhong

2018-01-01

Controlling of the wettability of micro-nano scale surfaces not only plays important roles in basic science but also presents some significant applications in interference shielding materials, microfluidics and phase-change heat transfer enhancement, etc. Here, the superhydrophobic super-aligned carbon nanotube (SACNT) films are firstly obtained by the chemical vapor deposition method and the annealing process. Then their wettabilities are in-situ switched by the electrowetting strategy. Specifically, the fascinating transformation of superhydrophobicity to the superhydrophilicity is achieved by exerting external DC voltages across the CNT-liquid interfaces, and the transitions of Cassie-to-Wenzel states are observed on the multilayer SACNT films. In addition, the electrowetting induced salt absorption of the porous SACNT is also reported here. Finally, the threshold voltages of the electrowetting behaviors for different liquids on the SACNT films and unit capacitances across the CNT-liquid interfaces are obtained, which reveal that the SACNT films have much more outstanding electrowetting properties than the previously reported works. Our approach reported here demonstrates that the wettability of SACNT films could be simply, effectively and in-situ controlled by the electrowetting method, which will have many profound implications in numerous applications such as phase-change heat transfer enhancement, optical lens with variable focal length and microfluidics, etc.

Persistent photocurrent (PPC) in solution-processed organic thin film transistors: Mechanisms of gate voltage control

NASA Astrophysics Data System (ADS)

Singh, Subhash; Mohapatra, Y. N.

2016-07-01

There is a growing need to understand mechanisms of photoresponse in devices based on organic semiconductor thin films and interfaces. The phenomenon of persistent photocurrent (PPC) has been systematically investigated in solution processed TIPS-Pentacene based organic thin film transistors (OTFTs) as an important example of an organic semiconductor material system. With increasing light intensity from dark to 385 mW/cm2, there is a significant shift in threshold voltage (VTh) while the filed-effect mobility remains unchanged. The OTFT shows large photoresponse under white light illumination due to exponential tail states with characteristic energy parameter of 86 meV. The photo-induced current is observed to persist even for several hours after turning the light off. To investigate the origin of PPC, its quenching mechanism is investigated by a variety of methods involving a combination of gate bias, illumination and temperature. We show that a coherent model of trap-charge induced carrier concentration is able to account for the quenching behavior. Analysis of isothermal transients using time-analyzed transient spectroscopy shows that the emission rates are activated and are also field enhanced due to Poole-Frankel effect. The results shed light on the nature, origin, and energetic distribution of the traps controlling PPC in solution processed organic semiconductors and their interfaces.

Progesterone Decreases in vitro Indoleamine 2, 3-dioxygenase Expression in Dendritic and CD4+ Cells from Maternal-Fetal Interface of Rats.

PubMed

Bianchi, Pedro Kastein Faria da Cunha; Leandro, Rafael Magdanelo; Poscai, Aline Nayara; Yoshinaga, Tulio; Gonçalez, Patrícia Orlandini; Kfoury Junior, José Roberto

2017-07-01

Several mechanisms contribute to the tolerogenic state observed during pregnancy, such as the activity of the enzyme indoleamine 2, 3-dioxygenase (IDO). This initializes the catabolism of tryptophan, inducing T cells to apoptosis due to its deprivation and by the action of its catabolites in the placental microenvironment. Progesterone plays an important part on immunological tolerance mechanisms during pregnancy; however, there is no evidence it is related to IDO activity. Thus, this study aimed to investigate progesterone influence on the maternal-fetal interface of pregnant Wistar rats, by identifying IDO positive cells by immunophenotyping and flow cytometry under exogenous progesterone supplementation. Placenta and embryo cells were cultured and separated into groups that received interferon γ or progesterone, supplemented or not with mifepristone. After 2 and 24 h, these were labeled with an anti-IDO and a series of antibodies specific to leucocytes and progesterone receptor and processed through flow cytometry analysis. Progesterone induced a significant decrease in the expression of IDO in dendritic cells and CD4 + lymphocytes. The blocking of progesterone receptor on these cells by mifepristone restored IDO expression levels and may constitute evidence of the participation of this hormone through a direct route in these cells.

Finite element analysis when orthogonal cutting of hybrid composite CFRP/Ti

NASA Astrophysics Data System (ADS)

Xu, Jinyang; El Mansori, Mohamed

2015-07-01

Hybrid composite, especially CFRP/Ti stack, is usually considered as an innovative structural configuration for manufacturing the key load-bearing components in modern aerospace industry. This paper originally proposed an FE model to simulate the total chip formation process dominated the hybrid cutting operation. The hybrid composite model was established based on three physical constituents, i.e., Ti constituent, interface and CFRP constituent. Different constitutive models and damage criteria were introduced to replicate the interrelated cutting behaviour of the stack material. The CFRP/Ti interface was modelled as a third phase through the concept of cohesive zone (CZ). Particular attention was made on the comparative studies of the influence of different cutting-sequence strategies on the machining responses induced in hybrid stack cutting. The numerical results emphasized the pivotal role of cutting-sequence strategy on the various machining induced responses including cutting-force generation, machined surface quality and induced interface damage.

Engineered unique elastic modes at a BaTiO 3/2x1-Ge(001) interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumah, D. P.; Dogan, M.; Ngai, J. H.

Here, the strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2×1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO 3 where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO 3. While the complex crystal structure is predicted using first-principles theory, it is further shown that themore » details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO 3 induced by the symmetry of forces exerted by the germanium substrate.« less

Engineered Unique Elastic Modes at a BaTiO 3 / ( 2 × 1 ) - Ge ( 001 ) Interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumah, D. P.; Dogan, M.; Ngai, J. H.

The strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2×1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO3 where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO3. While the complex crystal structure is predicted using first-principles theory, it is further shown that the details of themore » structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO3 induced by the symmetry of forces exerted by the germanium substrate.« less

Engineered unique elastic modes at a BaTiO 3/2x1-Ge(001) interface

DOE PAGES

Kumah, D. P.; Dogan, M.; Ngai, J. H.; ...

2016-03-07

Here, the strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2×1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO 3 where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO 3. While the complex crystal structure is predicted using first-principles theory, it is further shown that themore » details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO 3 induced by the symmetry of forces exerted by the germanium substrate.« less

Spectra of electrons emitted as a result of the sticking and annihilation of low energy positrons to the surfaces of graphene and highly oriented pyrolytic graphite (HOPG)

NASA Astrophysics Data System (ADS)

Chrysler, M.; Chirayath, V.; McDonald, A.; Lim, Z.; Shastry, K.; Gladen, R.; Fairchild, A.; Koymen, A.; Weiss, A.

Positron annihilation induced Auger electron spectroscopy (PAES) was used to study the positron induced low energy electron spectra from HOPG and a sample composed of 6-8 layers of graphene grown on polycrystalline copper. A low energy (~2eV) beam of positrons was used to implant positrons into a surface localized state on the graphene and HOPG samples. Measurements of the energy spectra of the positron induced electrons obtained using a TOF spectrometer indicate the presence of an annihilation induced KLL C Auger peak (at ~263 eV) along with a narrow low energy secondary peak due to an Auger mediated positron sticking (AMPS) process. A broad spectral feature was also observed below ~15 eV which we believe may be due to a VVV C Auger transition not previously observed. The energy dependence of the integrated intensity of the AMPS peak was measured for a series of incident positron kinetic energies ranging from ~1.5 eV up to 11 eV from which the binding energy of the surface localized positron state on graphene and HOPG was estimated. The implication of our results regarding the applicability of AMPS and PAES to the study of graphene surfaces and interfaces will be discussed. This work was supported by NSF Grant No. DMR 1508719 and DMR 1338130.

Controllable Grid Interface Test System | Energy Systems Integration

Science.gov Websites

Facility | NREL Controllable Grid Interface Test System Controllable Grid Interface Test System NREL's controllable grid interface (CGI) test system can reduce certification testing time and costs grid interface is the first test facility in the United States that has fault simulation capabilities

The Moving Edge: Perspectives on the Southern Wildland-Urban Interface

Treesearch

Martha C. Monroe; Alison W. Bowers; L. Annie Hermansen

2003-01-01

To better understand the wildland-urban interface across the 13 Southern States and to identify issues to be covered in the USDA Forest Service report, "Human Influences on Forest Ecosystems: The Southern Wildland-Urban Interface Assessment," 12 focus groups were conducted in 6 of the Southern States in May and June 2000. The groups were guided through a...

Steady-State Somatosensory Evoked Potential for Brain-Computer Interface—Present and Future

PubMed Central

Ahn, Sangtae; Kim, Kiwoong; Jun, Sung Chan

2016-01-01

Brain-computer interface (BCI) performance has achieved continued improvement over recent decades, and sensorimotor rhythm-based BCIs that use motor function have been popular subjects of investigation. However, it remains problematic to introduce them to the public market because of their low reliability. As an alternative resolution to this issue, visual-based BCIs that use P300 or steady-state visually evoked potentials (SSVEPs) seem promising; however, the inherent visual fatigue that occurs with these BCIs may be unavoidable. For these reasons, steady-state somatosensory evoked potential (SSSEP) BCIs, which are based on tactile selective attention, have gained increasing attention recently. These may reduce the fatigue induced by visual attention and overcome the low reliability of motor activity. In this literature survey, recent findings on SSSEP and its methodological uses in BCI are reviewed. Further, existing limitations of SSSEP BCI and potential future directions for the technique are discussed. PMID:26834611

The wildland-urban interface in the United States

Treesearch

Susan I. Stewart; Volker C. Radeloff; Roger B. Hammer

2006-01-01

This paper presents a map of the wildland-urban interface (WUI) in 2000 for the lower 48 States of the United States. The WUI was extensive, covering 9 percent of the land area in the lower 48 States and encompassing 38 percent of all homes. Major WUI areas are located along the west coast, the Colorado Front Range, southeast Texas, the Great Lakes States, and across...

COMMENT: Comment on 'Particle size dependent exchange bias and cluster-glass states in LaMn0.7Fe0.3O3 '

NASA Astrophysics Data System (ADS)

Geshev, J.

2009-02-01

Thakur et al (2008 J. Phys.: Condens. Matter 20 195215) have recently reported magnetization hysteresis loops shifted along the field axis of the cluster-glass compound LaMn0.7Fe0.3O3, attributed there to exchange bias induced at ferromagnetic/spin-glass-like interfaces. The present comment affirms that their results are insufficient for assigning the phenomenon solely to exchange bias since the corresponding field shift, if any, cannot be separated from that of a minor hysteresis loop of a ferromagnet, naturally displaced from the origin.

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Interfacial Charge Transfer States in Condensed Phase Systems

NASA Astrophysics Data System (ADS)

Vandewal, Koen

2016-05-01

Intermolecular charge transfer (CT) states at the interface between electron-donating (D) and electron-accepting (A) materials in organic thin films are characterized by absorption and emission bands within the optical gap of the interfacing materials. CT states efficiently generate charge carriers for some D-A combinations, and others show high fluorescence quantum efficiencies. These properties are exploited in organic solar cells, photodetectors, and light-emitting diodes. This review summarizes experimental and theoretical work on the electronic structure and interfacial energy landscape at condensed matter D-A interfaces. Recent findings on photogeneration and recombination of free charge carriers via CT states are discussed, and relations between CT state properties and optoelectronic device parameters are clarified.

Electrically detected crystal orientation dependent spin-Rabi beat oscillation of c-Si(111)/SiO2 interface states

NASA Astrophysics Data System (ADS)

Paik, Seoyoung; Lee, Sang-Yun; McCamey, Dane R.; Boehme, Christoph

2011-12-01

Electrically detected spin-Rabi beat oscillation of pairs of paramagnetic near interface states at the phosphorous doped (1016 cm-3) Si(111)/SiO2 interface is reported. Due to the g-factor anisotropy of the Pb center (a silicon surface dangling bond), one can tune intrapair Larmor frequency differences (Larmor separations) by orientation of the crystal with regard to an external magnetic field. Since Larmor separation governs the number of beating spin pairs, crystal orientation can control the beat current. This is used to identify spin states that are paired by mutual electronic transitions. The experiments confirm the presence of the previously reported 31P-Pb transition and provide direct experimental evidence of the previously hypothesized Pb-E' center (a near interface SiO2 bulk state) transition.

Method of transferring strained semiconductor structure

DOEpatents

Nastasi, Michael A [Santa Fe, NM; Shao, Lin [College Station, TX

2009-12-29

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.

Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric

NASA Astrophysics Data System (ADS)

Cheng, Yunfei; Wang, Wu

2017-10-01

In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.

Numerical Modeling of Solidification in Space With MEPHISTO-4. Part 2

NASA Technical Reports Server (NTRS)

Simpson, James E.; Yoa, Minwu; deGroh, Henry C., III; Garimella, V. Suresh

1998-01-01

A pre-flight analysis of the directional solidification of BiSn with MEPHISTO-4 is presented. Simplified Bridgman growth under microgravity conditions is simulated using a two dimensional finite element model. This numerical model is a single domain, pseudo-steady state model, and includes the effects of both thermal and solutal convection. The results show that for all orientations of the applied steady state gravity vector, of magnitude 1 micro-g, the directional solidification process remains diffusion controlled. The maximum convective velocity was found to be 4.424 x 10(exp -5) cm/s for the horizontal Bridgman growth configuration. This value is an order of magnitude lower than the growth velocity. The maximum and minimum values or solute concentration in the liquid at the crystal-melt interface were 13.867 at.% and 13.722 at.%, respectively. This gives a radial segregation value of xi = 1.046% at the interface. A secondary objective of this work was to compare the results obtained to those that consider thermal convection only (no solutal convection). It was found that the convective flow patterns in simulations which included solutal convection were significantly different from those which ignored solutal convection. The level of radial segregation predicted by the current simulations is an order of magnitude lower than that found in simulations which ignore solutal convection. The final aim was to investigate the effect of g-jitter on the crystal growth process. A simulation was performed to calculate the system response to a 1 second, 100 micro-g gravity impulse acting normal to the direction of growth. This pulse is consistent with that induced by Orbiter thruster firings. The results obtained indicate that such a gravity pulse causes an increase in the level of radial solute segregation at the interface from the steady state values. The maximum value of solute concentration in the liquid was found to be 13.888 at.%, the minimum value calculated was 13.706 at.%, yielding a radial segregation value of xi = 1.31% at the interface. These values occurred 126 seconds after the pulse terminated. Thus it is anticipated that the process will remain diffusion controlled even when subjected to such g-jitter.

Attraction induced frictionless sliding of rare gas monolayer on metallic surfaces: an efficient strategy for superlubricity.

PubMed

Sun, Junhui; Zhang, Yanning; Lu, Zhibin; Xue, Qunji; Wang, Liping

2017-05-10

Friction on a nanoscale revealed rich load-dependent behavior, which departs strongly from the long-standing Amonton's law. Whilst electrostatic repulsion-induced friction collapse for rare gas sliding over metallic surfaces in a high-load regime was reported by Righi et al. (Phys. Rev. Lett., 2007, 99, 176101), the significant role of attraction on frictional properties has not been reported to date. In this study, the frictional motion of Xe/Cu(111), Xe/Pd(111) and Ar/Cu(111) was studied using van der Waals corrected density functional calculations. An attraction-induced zero friction, which is a signal of superlubricity, was found for the sliding systems. The superlubric state results from the disappearance of the potential corrugation along the favored sliding path as a consequence of the potential crossing in the attractive regime when the interfacial pressure approaches a critical-value. The finding of an attraction-driven friction drop, together with the repulsion-induced collapse in the high-load regime, which breaks down the classic Amonton's law, provides a distinct approach for the realization of inherent superlubricity in some adsorbate/substrate interfaces.

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

PubMed

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

The Interface Influence in TiN/SiN x Multilayer Nanocomposite Under Irradiation

NASA Astrophysics Data System (ADS)

Uglov, V. V.; Safronov, I. V.; Kvasov, N. T.; Remnev, G. E.; Shimanski, V. I.

2018-01-01

The paper focuses on studying the kinetics of radiation-induced point defects formed in TiN/SiN x multilayer nanocomposites with account of their generation, diffusion recombination, and the influence of sinks functioning as interfaces. In order to describe the kinetics in nanocrystalline TiN and amorphous SiN x phases, a finite-difference method is used to solve the system of balance kinetic equations for absolute defect concentrations depending on the spatiotemporal variables. A model of the disclination-dislocation interface structure is used to study the absorption of radiation-induced point defects on the boundaries in created stress fields. It is shown that the interface effectively absorbs point defects in these phases of TiN/SiN x multilayer nanocomposite, thereby reducing their amount within the space between phases. This behavior of point defects partially explains a mechanism of the radiation resistance in this type of nanocomposites.

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mäkelä, J., E-mail: jaakko.m.makela@utu.fi, E-mail: pekka.laukkanen@utu.fi, E-mail: rmwallace@utdallas.edu; Tuominen, M.; Yasir, M.

2015-08-10

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.

Steady-state propagation speed of rupture fronts along one-dimensional frictional interfaces.

PubMed

Amundsen, David Skålid; Trømborg, Jørgen Kjoshagen; Thøgersen, Kjetil; Katzav, Eytan; Malthe-Sørenssen, Anders; Scheibert, Julien

2015-09-01

The rupture of dry frictional interfaces occurs through the propagation of fronts breaking the contacts at the interface. Recent experiments have shown that the velocities of these rupture fronts range from quasistatic velocities proportional to the external loading rate to velocities larger than the shear wave speed. The way system parameters influence front speed is still poorly understood. Here we study steady-state rupture propagation in a one-dimensional (1D) spring-block model of an extended frictional interface for various friction laws. With the classical Amontons-Coulomb friction law, we derive a closed-form expression for the steady-state rupture velocity as a function of the interfacial shear stress just prior to rupture. We then consider an additional shear stiffness of the interface and show that the softer the interface, the slower the rupture fronts. We provide an approximate closed form expression for this effect. We finally show that adding a bulk viscosity on the relative motion of blocks accelerates steady-state rupture fronts and we give an approximate expression for this effect. We demonstrate that the 1D results are qualitatively valid in 2D. Our results provide insights into the qualitative role of various key parameters of a frictional interface on its rupture dynamics. They will be useful to better understand the many systems in which spring-block models have proved adequate, from friction to granular matter and earthquake dynamics.

Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

NASA Astrophysics Data System (ADS)

Nazir, S.; Singh, N.; Schwingenschlögl, U.

2011-03-01

The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes in the crystal structure and chemical bonding near the interface, which is due to a minimal lattice mismatch. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO3/SrTiO3. The KTaO3/SrTiO3 system is ideal for disentangling the complex behavior of metallic interface states, since almost no structural relaxation takes place.

Influence of Pentacene Interface Layer in ITO/α-NPD/Alq3/Al Organic Light Emitting Diodes by Time-Resolved Electric-Field-Induced Optical Second-Harmonic Generation Measurement.

PubMed

Oda, Yoshiaki; Sadakata, Atsuo; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2016-04-01

By using I-V, EL-V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and a-NPD layers in ITO/α-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I-V and EL-V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the a-NPD and Alq3 layers, which resulted in the relaxation of electric field of a-NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I-V and EL-V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.

Chromium silicide formation by ion mixing

NASA Technical Reports Server (NTRS)

Shreter, U.; So, F. C. T.; Nicolet, M.-A.

1984-01-01

The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

Research on c-HfO2 (0 0 1)/α -Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

NASA Astrophysics Data System (ADS)

Lu, Wenjuan; Dai, Yuehua; Wang, Feifei; Yang, Fei; Ma, Chengzhi; Zhang, Xu; Jiang, Xianwei

2017-12-01

With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

In vitro mechanical stimulation facilitates stress dissipation and sealing ability at the conventional glass ionomer cement-dentin interface.

PubMed

Toledano, Manuel; Osorio, Raquel; Osorio, Estrella; Cabello, Inmaculada; Toledano-Osorio, Manuel; Aguilera, Fátima S

2018-06-01

The aim of this study was to evaluate the induced changes in the chemical and mechanical performance at the glass-ionomer cement-dentin interface after mechanical load application. A conventional glass-ionomer cement (GIC) (Ketac Bond), and a resin-modified glass-ionomer cement (RMGIC) (Vitrebond Plus) were used. Bonded interfaces were stored in simulated body fluid, and then tested or submitted to the mechanical loading challenge. Different loading waveforms were applied: No cycling, 24 h cycled in sine or loaded in sustained hold waveforms. The cement-dentin interface was evaluated using a nano-dynamic mechanical analysis, estimating the complex modulus and tan δ. Atomic Force Microscopy (AFM) imaging, Raman analysis and dye assisted confocal microscopy evaluation (CLSM) were also performed. The complex modulus was lower and tan delta was higher at interfaces promoted with the GIC if compared to the RMGIC unloaded. The conventional GIC attained evident reduction of nanoleakage. Mechanical loading favored remineralization and promoted higher complex modulus and lower tan delta values at interfaces with RMGIC, where porosity, micropermeability and nanoleakage were more abundant. Mechanical stimuli diminished the resistance to deformation and increased the stored energy at the GIC-dentin interface. The conventional GIC induced less porosity and nanoleakage than RMGIC. The RMGIC increased nanoleakage at the porous interface, and dye sorption appeared within the cement. Both cements created amorphous and crystalline apatites at the interface depending on the type of mechanical loading. Remineralization, lower stress concentration and resistance to deformation after mechanical loading improved the sealing of the GIC-dentin interface. In vitro oral function will favor high levels of accumulated energy and permits micropermeability at the RMGIC-dentin interface which will become remineralized. Copyright © 2018 Elsevier Ltd. All rights reserved.

Analysis of steady-state salt-water upconing with application at Truro well field, Cape Cod, Massachusetts

USGS Publications Warehouse

Reilly, T.E.; Frimpter, M.H.; LeBlanc, D.R.; Goodman, A.S.

1987-01-01

Sharp interface methods have been used successfully to describe the physics of upconing. A finite-element model is developed to simulate a sharp interface for determination of the steady-state position of the interface and maximum permissible well discharges. The model developed is compared to previous published electric-analog model results of Bennett and others (1968). -from Authors

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Origin of bias-stress induced instability in organic thin-film transistors with semiconducting small-molecule/insulating polymer blend channel.

PubMed

Park, Ji Hoon; Lee, Young Tack; Lee, Hee Sung; Lee, Jun Young; Lee, Kimoon; Lee, Gyu Baek; Han, Jiwon; Kim, Tae Woong; Im, Seongil

2013-03-13

The stabilities of a blending type organic thin-film transistor with phase-separated TIPS-pentacene channel layer were characterized under the conditions of negative-bias-stress (NBS) and positive-bias-stress (PBS). During NBS, threshold voltage (Vth) shifts noticeably. NBS-imposed devices revealed interfacial trap density-of-states (DOS) at 1.56 and 1.66 eV, whereas initial device showed the DOS at only 1.56 eV, as measured by photoexcited charge-collection spectroscopy (PECCS) method. Possible origin of this newly created defect is related to ester group in PMMA, which induces some hole traps at the TIPS-pentacene/i-PMMA interface. PBS-imposed device showed little Vth shift but visible off-current increase as "back-channel" effect, which is attributed to the water molecules trapped on the TFT surface.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

Anti-Adhesive Behaviors between Solid Hydrate and Liquid Aqueous Phase Induced by Hydrophobic Silica Nanoparticles.

PubMed

Min, Juwon; Baek, Seungjun; Somasundaran, P; Lee, Jae W

2016-09-20

This study introduces an "anti-adhesive force" at the interface of solid hydrate and liquid solution phases. The force was induced by the presence of hydrophobic silica nanoparticles or one of the common anti-agglomerants (AAs), sorbitan monolaurate (Span 20), at the interface. The anti-adhesive force, which is defined as the maximum pushing force that does not induce the formation of a capillary bridge between the cyclopentane (CP) hydrate particle and the aqueous solution, was measured using a microbalance. Both hydrophobic silica nanoparticles and Span 20 can inhibit adhesion between the CP hydrate probe and the aqueous phase because silica nanoparticles have an aggregative property at the interface, and Span 20 enables the hydrate surface to be wetted with oil. Adding water-soluble sodium dodecyl sulfate (SDS) to the nanoparticle system cannot affect the aggregative property or the distribution of silica nanoparticles at the interface and, thus, cannot change the anti-adhesive effect. However, the combined system of Span 20 and SDS dramatically reduces the interfacial tension: emulsion drops were formed at the interface without any energy input and were adsorbed on the CP hydrate surface, which can cause the growth of hydrate particles. Silica nanoparticles have a good anti-adhesive performance with a relatively smaller dosage and are less influenced by the presence of molecular surfactants; consequently, these nanoparticles may have a good potential for hydrate inhibition as AAs.

Structural deformation upon protein-protein interaction: A structural alphabet approach

PubMed Central

Martin, Juliette; Regad, Leslie; Lecornet, Hélène; Camproux, Anne-Claude

2008-01-01

Background In a number of protein-protein complexes, the 3D structures of bound and unbound partners significantly differ, supporting the induced fit hypothesis for protein-protein binding. Results In this study, we explore the induced fit modifications on a set of 124 proteins available in both bound and unbound forms, in terms of local structure. The local structure is described thanks to a structural alphabet of 27 structural letters that allows a detailed description of the backbone. Using a control set to distinguish induced fit from experimental error and natural protein flexibility, we show that the fraction of structural letters modified upon binding is significantly greater than in the control set (36% versus 28%). This proportion is even greater in the interface regions (41%). Interface regions preferentially involve coils. Our analysis further reveals that some structural letters in coil are not favored in the interface. We show that certain structural letters in coil are particularly subject to modifications at the interface, and that the severity of structural change also varies. These information are used to derive a structural letter substitution matrix that summarizes the local structural changes observed in our data set. We also illustrate the usefulness of our approach to identify common binding motifs in unrelated proteins. Conclusion Our study provides qualitative information about induced fit. These results could be of help for flexible docking. PMID:18307769

Structural deformation upon protein-protein interaction: a structural alphabet approach.

PubMed

Martin, Juliette; Regad, Leslie; Lecornet, Hélène; Camproux, Anne-Claude

2008-02-28

In a number of protein-protein complexes, the 3D structures of bound and unbound partners significantly differ, supporting the induced fit hypothesis for protein-protein binding. In this study, we explore the induced fit modifications on a set of 124 proteins available in both bound and unbound forms, in terms of local structure. The local structure is described thanks to a structural alphabet of 27 structural letters that allows a detailed description of the backbone. Using a control set to distinguish induced fit from experimental error and natural protein flexibility, we show that the fraction of structural letters modified upon binding is significantly greater than in the control set (36% versus 28%). This proportion is even greater in the interface regions (41%). Interface regions preferentially involve coils. Our analysis further reveals that some structural letters in coil are not favored in the interface. We show that certain structural letters in coil are particularly subject to modifications at the interface, and that the severity of structural change also varies. These information are used to derive a structural letter substitution matrix that summarizes the local structural changes observed in our data set. We also illustrate the usefulness of our approach to identify common binding motifs in unrelated proteins. Our study provides qualitative information about induced fit. These results could be of help for flexible docking.

Investigating the Effects of Multimodal Feedback through Tracking State in Pen-Based Interfaces

ERIC Educational Resources Information Center

Sun, Minghui; Ren, Xiangshi

2011-01-01

A tracking state increases the bandwidth of pen-based interfaces. However, this state is difficult to detect with default visual feedback. This paper reports on two experiments that are designed to evaluate multimodal feedback for pointing tasks (both 1D and 2D) in tracking state. In 1D pointing experiments, results show that there is a…

Phase field crystal simulation of stress induced localized solid-state amorphization in nanocrystalline materials

NASA Astrophysics Data System (ADS)

Xi, Wen; Song, Xiaoqing; Hu, Shi; Chen, Zheng

2017-11-01

In this work, the phase field crystal (PFC) method is used to study the localized solid-state amorphization (SSA) and its dynamic transformation process in polycrystalline materials under the uniaxial tensile deformation with different factors. The impacts of these factors, including strain rates, temperatures and grain sizes, are analyzed. Kinetically, the ultra-high strain rate causes the lattice to be seriously distorted and the grain to gradually collapse, so the dislocation density rises remarkably. Therefore, localized SSA occurs. Thermodynamically, as high temperature increases the activation energy, the atoms are active and prefer to leave the original position, which induce atom rearrangement. Furthermore, small grain size increases the percentage of grain boundary and the interface free energy of the system. As a result, Helmholtz free energy increases. The dislocations and Helmholtz free energy act as the seed and driving force for the process of the localized SSA. Also, the critical diffusion-time step and the percentage of amorphous region areas are calculated. Through this work, the PFC method is proved to be an effective means to study localized SSA under uniaxial tensile deformation.

Dynamical photo-induced electronic properties of molecular junctions

NASA Astrophysics Data System (ADS)

Beltako, K.; Michelini, F.; Cavassilas, N.; Raymond, L.

2018-03-01

Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, naturally flexible and efficient, for next-generation technologies. A deeper understanding of carrier dynamics in molecular junctions is expected to benefit many fields of nanoelectronics and power devices. We determine time-resolved charge current flowing at the donor-acceptor interface in molecular junctions connected to metallic electrodes by means of quantum transport simulations. The current is induced by the interaction of the donor with a Gaussian-shape femtosecond laser pulse. Effects of the molecular internal coupling, metal-molecule tunneling, and light-donor coupling on photocurrent are discussed. We then define the time-resolved local density of states which is proposed as an efficient tool to describe the absorbing molecule in contact with metallic electrodes. Non-equilibrium reorganization of hybridized molecular orbitals through the light-donor interaction gives rise to two phenomena: the dynamical Rabi shift and the appearance of Floquet-like states. Such insights into the dynamical photoelectronic structure of molecules are of strong interest for ultrafast spectroscopy and open avenues toward the possibility of analyzing and controlling the internal properties of quantum nanodevices with pump-push photocurrent spectroscopy.

Phase field crystal simulation of stress induced localized solid-state amorphization in nanocrystalline materials.

PubMed

Xi, Wen; Song, Xiaoqing; Hu, Shi; Chen, Zheng

2017-11-29

In this work, the phase field crystal (PFC) method is used to study the localized solid-state amorphization (SSA) and its dynamic transformation process in polycrystalline materials under the uniaxial tensile deformation with different factors. The impacts of these factors, including strain rates, temperatures and grain sizes, are analyzed. Kinetically, the ultra-high strain rate causes the lattice to be seriously distorted and the grain to gradually collapse, so the dislocation density rises remarkably. Therefore, localized SSA occurs. Thermodynamically, as high temperature increases the activation energy, the atoms are active and prefer to leave the original position, which induce atom rearrangement. Furthermore, small grain size increases the percentage of grain boundary and the interface free energy of the system. As a result, Helmholtz free energy increases. The dislocations and Helmholtz free energy act as the seed and driving force for the process of the localized SSA. Also, the critical diffusion-time step and the percentage of amorphous region areas are calculated. Through this work, the PFC method is proved to be an effective means to study localized SSA under uniaxial tensile deformation.

Electric control of magnetization reorientation in FeRh /BaTiO3 mediated by a magnetic phase transition

NASA Astrophysics Data System (ADS)

Odkhuu, Dorj

2017-10-01

Employing first-principles calculations we predict magnetization reorientation in FeRh films epitaxially grown on BaTiO3 by reversing the electric polarization or applying the strain effect, which is associated with the recently discovered voltage-induced interfacial magnetic-phase transition by R. O. Cherifi et al. [Nat. Mater. 13, 345 (2014), 10.1038/nmat3870]. We propose that this transition from antiferromagnetic to ferromagnetic phase is the results of the mutual mechanisms of the polarization-reversal-induced volume/strain expansion in the interfacial FeRh layers and the competition between direct and indirect exchange interactions. These mechanisms are mainly driven by the ferroelectrically driven hybridization between Fe and Ti 3 d orbital states at the interface. Such a strong hybridization can further involve Rh 4 d states with large spin-orbit coupling, which, rather than the Fe 3 d orbitals, is responsible for magnetization reorientation at the magnetic-phase transition. These findings point toward the feasibility of electric field control of magnetization switching associated with the magnetic-phase transition in an antiferromagnet structure.

Domain wall in a quantum anomalous Hall insulator as a magnetoelectric piston

NASA Astrophysics Data System (ADS)

Upadhyaya, Pramey; Tserkovnyak, Yaroslav

2016-07-01

We theoretically study the magnetoelectric coupling in a quantum anomalous Hall insulator state induced by interfacing a dynamic magnetization texture to a topological insulator. In particular, we propose that the quantum anomalous Hall insulator with a magnetic configuration of a domain wall, when contacted by electrical reservoirs, acts as a magnetoelectric piston. A moving domain wall pumps charge current between electrical leads in a closed circuit, while applying an electrical bias induces reciprocal domain-wall motion. This pistonlike action is enabled by a finite reflection of charge carriers via chiral modes imprinted by the domain wall. Moreover, we find that, when compared with the recently discovered spin-orbit torque-induced domain-wall motion in heavy metals, the reflection coefficient plays the role of an effective spin-Hall angle governing the efficiency of the proposed electrical control of domain walls. Quantitatively, this effective spin-Hall angle is found to approach a universal value of 2, providing an efficient scheme to reconfigure the domain-wall chiral interconnects for possible memory and logic applications.

Bimodal behaviour of charge carriers in graphene induced by electric double layer

PubMed Central

Tsai, Sing-Jyun; Yang, Ruey-Jen

2016-01-01

A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

Effects of External Hydrogen on Hydrogen Transportation and Distribution Around the Fatigue Crack Tip in Type 304 Stainless Steel

NASA Astrophysics Data System (ADS)

Chen, Xingyang; Zhou, Chengshuang; Cai, Xiao; Zheng, Jinyang; Zhang, Lin

2017-10-01

The effects of external hydrogen on hydrogen transportation and distribution around the fatigue crack tip in type 304 stainless steel were investigated by using hydrogen microprint technique (HMT) and thermal desorption spectrometry. HMT results show that some silver particles induced by hydrogen release are located near the fatigue crack and more silver particles are concentrated around the crack tip, which indicates that hydrogen accumulates in the vicinity of the crack tip during the crack growth in hydrogen gas environment. Along with the crack propagation, strain-induced α' martensite forms around the crack tip and promotes hydrogen invasion into the matrix, which will cause the crack initiation and propagation at the austenite/ α' martensite interface. In addition, the hydrogen content in the vicinity of the crack tip is higher than that at the crack edge far away from the crack tip, which is related to the stress state and strain-induced α' martensite.

Atomistic Simulation of Interfaces in Materials of Solid State Ionics

NASA Astrophysics Data System (ADS)

Ivanov-Schitz, A. K.; Mazo, G. N.

2018-01-01

The possibilities of describing correctly interfaces of different types in solids within a computer experiment using molecular statics simulation, molecular dynamics simulation, and quantum chemical calculations are discussed. Heterophase boundaries of various types, including grain boundaries and solid electrolyte‒solid electrolyte and ionic conductor‒electrode material interfaces, are considered. Specific microstructural features and mechanisms of the ion transport in real heterophase structures (cationic conductor‒metal anode and anionic conductor‒cathode) existing in solid state ionics devices (such as solid-state batteries and fuel cells) are discussed.

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Integrated Interface Strategy toward Room Temperature Solid-State Lithium Batteries.

PubMed

Ju, Jiangwei; Wang, Yantao; Chen, Bingbing; Ma, Jun; Dong, Shanmu; Chai, Jingchao; Qu, Hongtao; Cui, Longfei; Wu, Xiuxiu; Cui, Guanglei

2018-04-25

Solid-state lithium batteries have drawn wide attention to address the safety issues of power batteries. However, the development of solid-state lithium batteries is substantially limited by the poor electrochemical performances originating from the rigid interface between solid electrodes and solid-state electrolytes. In this work, a composite of poly(vinyl carbonate) and Li 10 SnP 2 S 12 solid-state electrolyte is fabricated successfully via in situ polymerization to improve the rigid interface issues. The composite electrolyte presents a considerable room temperature conductivity of 0.2 mS cm -1 , an electrochemical window exceeding 4.5 V, and a Li + transport number of 0.6. It is demonstrated that solid-state lithium metal battery of LiFe 0.2 Mn 0.8 PO 4 (LFMP)/composite electrolyte/Li can deliver a high capacity of 130 mA h g -1 with considerable capacity retention of 88% and Coulombic efficiency of exceeding 99% after 140 cycles at the rate of 0.5 C at room temperature. The superior electrochemical performance can be ascribed to the good compatibility of the composite electrolyte with Li metal and the integrated compatible interface between solid electrodes and the composite electrolyte engineered by in situ polymerization, which leads to a significant interfacial impedance decrease from 1292 to 213 Ω cm 2 in solid-state Li-Li symmetrical cells. This work provides vital reference for improving the interface compatibility for room temperature solid-state lithium batteries.

Direct measurement of density of states in pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Yogev, S.; Halpern, E.; Matsubara, R.; Nakamura, M.; Rosenwaks, Y.

2011-10-01

We report on direct high lateral resolution measurements of density of states in pentacene thin film transistors using Kelvin probe force microscopy. The measurements were conducted on passivated (hexamethyldisilazane) and unpassivated field effect transistors with 10- and 30-nm-thick pentacene polycrystalline layers. The analysis takes into account both the band bending in the organic film and the trapped charge at the SiO2-pentacene interface. We found that the density of states for the highest occupied molecular orbital band of pentacene film on the treated substrate is Gaussian with a width (variance) of σ=0.07±0.01eV and an exponential tail. The concentration of the density of states in the gap for pentacene on bare SiO2 substrate was larger by one order of magnitude, had a different energy distribution, and induced Fermi level pinning. The results are discussed in view of their effect on pentacene thin film transistors’ performance.

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

NASA Astrophysics Data System (ADS)

Walker, Roger C.; Shi, Tan; Jariwala, Bhakti; Jovanovic, Igor; Robinson, Joshua A.

2017-10-01

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that approach the limit of physical thickness are now possible. Such devices could be useful for space applications, but understanding how high-energy radiation impacts the properties of WSe2 and the WSe2/substrate interface has been lacking. In this work, we compare the stability against high energy proton radiation of WSe2 and silicon carbide (SiC) heterostructures generated by mechanical exfoliation of WSe2 flakes and by direct growth of WSe2 via metal-organic chemical vapor deposition (MOCVD). These two techniques produce WSe2/SiC heterostructures with distinct differences due to interface states generated during the MOCVD growth process. This difference carries over to differences in band alignment from interface states and the ultra-thin nature of the MOCVD-grown material. Both heterostructures are not susceptible to proton-induced charging up to a dose of 1016 protons/cm2, as measured via shifts in the binding energy of core shell electrons and a decrease in the valence band offset. Furthermore, the MOCVD-grown material is less affected by the proton exposure due to its ultra-thin nature and a greater interaction with the substrate. These combined effects show that the directly grown material is suitable for multi-year use in space, provided that high quality devices can be fabricated from it.

Mixing and transient interface condensation of a liquid hydrogen tank

NASA Technical Reports Server (NTRS)

Lin, C. S.; Hasan, M. M.; Nyland, T. W.

1993-01-01

Experiments were conducted to investigate the effect of axial jet-induced mixing on the pressure reduction of a thermally stratified liquid hydrogen tank. The tank was nearly cylindrical, having a volume of about 0.144 cu m with 0.559 m in diameter and 0.711 m long. A mixer/pump unit, which had a jet nozzle outlet of 0.0221 m in diameter was located 0.178 m from the tank bottom and was installed inside the tank to generate the axial jet mixing and tank fluid circulation. The liquid fill and jet flow rate ranged from 42 to 85 percent (by volume) and 0.409 to 2.43 cu m/hr, respectively. Mixing tests began with the tank pressure ranging from 187.5 to 238.5 kPa at which the thermal stratification results in 4.9 to 6.2 K liquid sub cooling. The mixing time and transient vapor condensation rate at the liquid-vapor interface are determined. Two mixing time correlations, based on the thermal equilibrium and pressure equilibrium, are developed. Both mixing time correlations are expressed as functions of system and buoyancy parameters and compared well with other experimental data. The steady state condensation rate correlation of Sonin et al. based on steam-water data is modified and expressed as a function of jet subcooling. The limited liquid hydrogen data of the present study shows that the modified steady state condensation rate correlation may be used to predict the transient condensation rate in a mixing process if the instantaneous values of jet sub cooling and turbulence intensity at the interface are employed.

Modeling Evaporation and Particle Assembly in Colloidal Droplets.

PubMed

Zhao, Mingfei; Yong, Xin

2017-06-13

Evaporation-induced assembly of nanoparticles in a drying droplet is of great importance in many engineering applications, including printing, coating, and thin film processing. The investigation of particle dynamics in evaporating droplets can provide fundamental hydrodynamic insight for revealing the processing-structure relationship in the particle self-organization induced by solvent evaporation. We develop a free-energy-based multiphase lattice Boltzmann method coupled with Brownian dynamics to simulate evaporating colloidal droplets on solid substrates with specified wetting properties. The influence of interface-bound nanoparticles on the surface tension and evaporation of a flat liquid-vapor interface is first quantified. The results indicate that the particles at the interface reduce surface tension and enhance evaporation flux. For evaporating particle-covered droplets on substrates with different wetting properties, we characterize the increase of evaporate rate via measuring droplet volume. We find that droplet evaporation is determined by the number density and circumferential distribution of interfacial particles. We further correlate particle dynamics and assembly to the evaporation-induced convection in the bulk and on the surface of droplet. Finally, we observe distinct final deposits from evaporating colloidal droplets with bulk-dispersed and interface-bound particles. In addition, the deposit pattern is also influenced by the equilibrium contact angle of droplet.

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

NASA Astrophysics Data System (ADS)

Javadi, Alisa; Ding, Dapeng; Appel, Martin Hayhurst; Mahmoodian, Sahand; Löbl, Matthias Christian; Söllner, Immo; Schott, Rüdiger; Papon, Camille; Pregnolato, Tommaso; Stobbe, Søren; Midolo, Leonardo; Schröder, Tim; Wieck, Andreas Dirk; Ludwig, Arne; Warburton, Richard John; Lodahl, Peter

2018-05-01

The spin of an electron is a promising memory state and qubit. Connecting spin states that are spatially far apart will enable quantum nodes and quantum networks based on the electron spin. Towards this goal, an integrated spin-photon interface would be a major leap forward as it combines the memory capability of a single spin with the efficient transfer of information by photons. Here, we demonstrate such an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared in the ground state with a fidelity of up to 96%. Subsequently, the system is used to implement a single-spin photonic switch, in which the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates, single-photon transistors and the efficient generation of a photonic cluster state.

Silicon/HfO{sub 2} interface: Effects of gamma irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, Savita

2016-05-23

Quality of MOS devices is a strong function of substrate and oxide interface. In this work we have studied how gamma photon irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide deposited on silicon wafer. CV and GV measurements have been done for pristine and irradiated samples to quantify the effect of gamma photon irradiation. Gamma photon irradiation not only introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface but also induce phase change of oxide layer. Maximum oxide capacitances are affected by gamma photon irradiation.

Gap state analysis in electric-field-induced band gap for bilayer graphene.

PubMed

Kanayama, Kaoru; Nagashio, Kosuke

2015-10-29

The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not been conducted. Here, we report the systematic estimation of the energy gap by both quantum capacitance and transport measurements and the density of states for gap states by the conductance method. An energy gap of ~ 250 meV is obtained at the maximum displacement field of ~ 3.1 V/nm, where the current on/off ratio of ~ 3 × 10(3) is demonstrated at 20 K. The density of states for the gap states are in the range from the latter half of 10(12) to 10(13) eV(-1) cm(-2). Although the large amount of gap states at the interface of high-k oxide/bilayer graphene limits the current on/off ratio at present, our results suggest that the reduction of gap states below ~ 10(11) eV(-1) cm(-2) by continual improvement of the gate stack makes bilayer graphene a promising candidate for future nanoelectronic device applications.

Magnetocapacitance and the physics of solid state interfaces

NASA Astrophysics Data System (ADS)

Hebard, Arthur

2008-10-01

When Herbert Kroemer stated in his Nobel address [1] that ``the interface is the device,'' he was implicitly acknowledging the importance of understanding the physics of interfaces. If interfaces are to have character traits, then ``impedance'' (or complex capacitance) would be a commonly used descriptor. In this talk I will discuss the use of magnetic fields to probe the ``character'' of a variety of interfaces including planar capacitor structures with magnetic electrodes, simple metal/semiconductor contacts (Schottky barriers) and the interface-dominated competition on microscopic length scales between ferromagnetic metallic and charge-ordered insulating phases in complex oxides. I will show that seeking experimental answers to surprisingly simple questions often leads to striking results that seriously challenge theoretical understanding. Perhaps Herbert Kroemer should have said, ``the interface is the device with a magnetic personality that continually surprises.'' [3pt] [1] Herbert Kroemer, ``Quasielectric fields and band offsets: teaching electron s new tricks,'' Nobel Lecture, December 8, 2000:

Calculation of rates of exciton dissociation into hot charge-transfer states in model organic photovoltaic interfaces

NASA Astrophysics Data System (ADS)

Vázquez, Héctor; Troisi, Alessandro

2013-11-01

We investigate the process of exciton dissociation in ordered and disordered model donor/acceptor systems and describe a method to calculate exciton dissociation rates. We consider a one-dimensional system with Frenkel states in the donor material and states where charge transfer has taken place between donor and acceptor. We introduce a Green's function approach to calculate the generation rates of charge-transfer states. For disorder in the Frenkel states we find a clear exponential dependence of charge dissociation rates with exciton-interface distance, with a distance decay constant β that increases linearly with the amount of disorder. Disorder in the parameters that describe (final) charge-transfer states has little effect on the rates. Exciton dissociation invariably leads to partially separated charges. In all cases final states are “hot” charge-transfer states, with electron and hole located far from the interface.

A theoretical model and phase field simulation on the evolution of interface roughness in the oxidation process

NASA Astrophysics Data System (ADS)

Yang, Fan; Fang, Dai-Ning; Liu, Bin

2012-01-01

An oxidation kinetics model is developed to account for the effects of the oxidation interface curvature and the oxidation-induced volume change or Pilling-Bedworth ratio. For the oxidation of Fe-Cr-Al-Y alloy fiber, the predictions agree well with experimental results. By considering the influence of the oxidation interface curvature on oxidation rates, the evolution of fluctuant oxidation interface is predicted. We also developed the phase field method (PFM) to simulate the evolution of the interface roughness. Both the theoretical model and the PFM results show that the interface will become smooth during high temperature oxidation. Stress distribution and evolution are calculated by PFM, which indicates that the stress level decreases as the interface morphology evolves.

Exchange bias mechanism in FM/FM/AF spin valve systems in the presence of random unidirectional anisotropy field at the AF interface: The role played by the interface roughness due to randomness

NASA Astrophysics Data System (ADS)

Yüksel, Yusuf

2018-05-01

We propose an atomistic model and present Monte Carlo simulation results regarding the influence of FM/AF interface structure on the hysteresis mechanism and exchange bias behavior for a spin valve type FM/FM/AF magnetic junction. We simulate perfectly flat and roughened interface structures both with uncompensated interfacial AF moments. In order to simulate rough interface effect, we introduce the concept of random exchange anisotropy field induced at the interface, and acting on the interface AF spins. Our results yield that different types of the random field distributions of anisotropy field may lead to different behavior of exchange bias.

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Yu; Tang, Fu-Ling; Xue, Hong-Tao; Lu, Wen-Jiang; Liu, Jiang-Fei; Huang, Min

2015-02-01

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe2 (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about -1.2 J/m2, indicating that this interface is very stable. The MoSe2 layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about -6.5 to -5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about -5.0 to -1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe2 layer.

The Minimal Pharmacophore for Silent Agonism of the α7 Nicotinic Acetylcholine Receptor

PubMed Central

Chojnacka, Kinga; Horenstein, Nicole A.

2014-01-01

The minimum pharmacophore for activation of the human α7 nicotinic acetylcholine receptor (nAChR) is the tetramethylammonium cation. Previous work demonstrated that larger quaternary ammonium compounds, such as diethyldimethylammonium or 1-methyl quinuclidine, were α7-selective partial agonists, but additional increase in the size of the ammonium cation or the quinuclidine N-alkyl group by a single carbon to an N-ethyl group led to a loss of efficacy for ion channel activation. We report that although such compounds are ineffective at inducing the normal channel open state, they nonetheless regulate the induction of specific conformational states normally considered downstream of channel activation. We synthesized several panels of quaternary ammonium nAChR ligands that systematically varied the size of the substituents bonded to the central positively charged nitrogen atom. In these molecular series, we found a correlation between the molecular volume of the ligand and/or charge density, and the receptor’s preferred distribution among conformational states including the closed state, the active state, a nonconducting state that could be converted to an activated state by a positive allosteric modulator (PAM), and a PAM-insensitive nonconducting state. We hypothesize that the changes of molecular volume of an agonist’s cationic core subtly impact interactions at the subunit interface constituting the orthosteric binding site in such a way as to regulate the probability of conversions among the conformational states. We define a new minimal pharmacophore for the class of compounds we have termed “silent agonists,” which are able to induce allosteric modulator-dependent activation but not the normal activated state. PMID:24990939

Linking process and structure in the friction stir scribe joining of dissimilar materials: A computational approach with experimental support

DOE PAGES

Gupta, Varun; Upadhyay, Piyush; Fifield, Leonard S.; ...

2018-04-04

We present that friction stir welding (FSW) is a popular technique to join dissimilar materials in numerous applications. The solid state nature of the process enables joining materials with strikingly different physical properties. For welds in lap configuration, an enhancement to this technology is made by introducing a short, hard insert, referred to as a cutting-scribe, at the bottom of the tool pin. The cutting-scribe induces deformation in the bottom plate which leads to the formation of mechanical interlocks or hook like structures at the interface of two materials. A thermo-mechanical computational model employing a coupled Eulerian-Lagrangian approach is developedmore » to quantitatively capture the morphology of these interlocks during the FSW process. Simulations using this model are validated by experimental observations. In conclusion, the identified interface morphology coupled with the predicted temperature field from this process–structure model can be used to estimate the post-weld microstructure and joint strength.« less

Thermal denaturation of the BRCT tandem repeat region of human tumour suppressor gene product BRCA1.

PubMed

Pyrpassopoulos, Serapion; Ladopoulou, Angela; Vlassi, Metaxia; Papanikolau, Yannis; Vorgias, Constantinos E; Yannoukakos, Drakoulis; Nounesis, George

2005-04-01

Reduced stability of the tandem BRCT domains of human BReast CAncer 1 (BRCA1) due to missense mutations may be critical for loss of function in DNA repair and damage-induced checkpoint control. In the present thermal denaturation study of the BRCA1 BRCT region, high-precision differential scanning calorimetry (DSC) and circular dichroism (CD) spectroscopy provide evidence for the existence of a denatured state that is structurally very similar to the native. Consistency between theoretical structure-based estimates of the enthalpy (DeltaH) and heat capacity change (DeltaCp) and the calorimetric results is obtained when considering partial thermal unfolding contained in the region of the conserved hydrophobic pocket formed at the interface of the two BRCT repeats. The structural integrity of this region has been shown to be crucial for the interaction of BRCA1 with phosphorylated peptides. In addition, cancer-causing missense mutations located at the inter-BRCT-repeat interface have been linked to the destabilization of the tandem BRCT structure.

The Influence of Oxygen in Transition Metal Oxides

NASA Astrophysics Data System (ADS)

Bach, P. L.; Leboran, V.; Rivadulla, F.

2012-02-01

The existence of a 2D metallic state at the interface between LaAlO3 and SrTiO3 (LAO/STO) has generated much excitement. Its origin has been attributed to charge redistribution to avoid a dielectric catastrophe; however, oxygen vacancies in TiO2-terminated STO can play a significant role in the electronic properties of the interface. In order to determine the nature and origin of the metallic phase, we have induced vacancies in TiO2-terminated STO single crystal substrates by annealing under controlled vacuum conditions. We report resistivity, Hall effect, and thermopower measurements on these materials and discuss their implications for the nature of the 2D electron gas at the STO surface. We have explored the possibility of gate-tuning these systems in order to fabricate single-oxide based devices. This work was supported by the Ministerio de Ciencia e Innovaci'on (Spain), grant MAT2010-16157, and the European Research Council, grant ERC-2010-StG 259082 2D THERMS.

Crystal Structure of PKG I:cGMP Complex Reveals a cGMP-Mediated Dimeric Interface that Facilitates cGMP-Induced Activation

DOE PAGES

Kim, Jeong Joo; Lorenz, Robin; Arold, Stefan T.; ...

2016-04-07

Cyclic guanosine monophosphate (cGMP)-dependent protein kinase (PKG) is a key regulator of smooth muscle and vascular tone and represents an important drug target for treating hypertensive diseases and erectile dysfunction. Despite its importance, its activation mechanism is not fully understood. To understand the activation mechanism, we determined a 2.5 Å crystal structure of the PKG I regulatory (R) domain bound with cGMP, which represents the activated state. Here, although we used a monomeric domain for crystallization, the structure reveals that two R domains form a symmetric dimer where the cGMP bound at high-affinity pockets provide critical dimeric contacts. Small-angle X-raymore » scattering and mutagenesis support this dimer model, suggesting that the dimer interface modulates kinase activation. Finally, structural comparison with the homologous cyclic AMP-dependent protein kinase reveals that PKG is drastically different from protein kinase A in its active conformation, suggesting a novel activation mechanism for PKG.« less

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

NASA Astrophysics Data System (ADS)

Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

2018-04-01

It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

Linking process and structure in the friction stir scribe joining of dissimilar materials: A computational approach with experimental support

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Varun; Upadhyay, Piyush; Fifield, Leonard S.

The friction stir welding (FSW) is a popular technique to join dissimilar materials in numerous applications. The solid state nature of the process enables joining materials with strikingly different physical properties. For the welds in lap configuration, an enhancement to this technology is made by introducing a short hard insert, referred to as cutting-scribe, at the bottom of the tool pin. The cutting-scribe induces deformation in the bottom plate which leads to the formation of mechanical interlocks or hook like structures at the interface of two materials. A thermo-mechanically coupled computational model employing coupled Eulerian-Lagrangian approach is developed to quantitativelymore » capture the morphology of these interlocks during the FSW process. The simulations using developed model are validated by the experimental observations.The identified interface morphology coupled with the predicted temperature field from this process-structure model can then be used to estimate the post-weld microstructure and joint strength.« less

Linking process and structure in the friction stir scribe joining of dissimilar materials: A computational approach with experimental support

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Varun; Upadhyay, Piyush; Fifield, Leonard S.

We present that friction stir welding (FSW) is a popular technique to join dissimilar materials in numerous applications. The solid state nature of the process enables joining materials with strikingly different physical properties. For welds in lap configuration, an enhancement to this technology is made by introducing a short, hard insert, referred to as a cutting-scribe, at the bottom of the tool pin. The cutting-scribe induces deformation in the bottom plate which leads to the formation of mechanical interlocks or hook like structures at the interface of two materials. A thermo-mechanical computational model employing a coupled Eulerian-Lagrangian approach is developedmore » to quantitatively capture the morphology of these interlocks during the FSW process. Simulations using this model are validated by experimental observations. In conclusion, the identified interface morphology coupled with the predicted temperature field from this process–structure model can be used to estimate the post-weld microstructure and joint strength.« less

Influence of surface diffusion on the formation of hollow nanostructures induced by the Kirkendall effect: the basic concept.

PubMed

Fan, Hong Jin; Knez, Mato; Scholz, Roland; Hesse, Dietrich; Nielsch, Kornelius; Zacharias, Margit; Gösele, Ulrich

2007-04-01

The Kirkendall effect has been widely applied for fabrication of nanoscale hollow structures, which involves an unbalanced counterdiffusion through a reaction interface. Conventional treatment of this process only considers the bulk diffusion of growth species and vacancies. In this letter, a conceptual extension is proposed: the development of the hollow interior undergoes two main stages. The initial stage is the generation of small Kirkendall voids intersecting the compound interface via a bulk diffusion process; the second stage is dominated by surface diffusion of the core material (viz., the fast-diffusing species) along the pore surface. This concept applies to spherical as well as cylindrical nanometer and microscale structures, and even to macroscopic bilayers. As supporting evidence, we show the results of a spinel-forming solid-state reaction of core-shell nanowires, as well as of a planar bilayer of ZnO-Al2O3 to illustrate the influence of surface diffusion on the morphology evolution.

Prenucleation Induced by Crystalline Substrates

NASA Astrophysics Data System (ADS)

Men, H.; Fan, Z.

2018-04-01

Prenucleation refers to the phenomenon of atomic ordering in the liquid adjacent to the substrate/liquid interface at temperatures above the liquidus. In this paper, we have systematically investigated and holistically quantified the prenucleation phenomenon as a function of temperature and the lattice misfit between the substrate and the solid, using molecular dynamics (MD) simulations. Our results have confirmed that at temperatures above the liquidus, the atoms in the liquid at the interface may exhibit pronounced atomic ordering, manifested by atomic layering normal to the interface, in-plane atomic ordering parallel to the interface, and the formation of a 2-dimensional (2D) ordered structure (a few atomic layers in thickness) on the substrate surface. Holistic quantification of such atomic ordering at the interface has revealed that the atomic layering is independent of lattice misfit and is only slightly enhanced by reducing temperature while both in-plane atomic ordering and the formation of the 2D ordered structure are significantly enhanced by reducing the lattice misfit and/or temperature. This substrate-induced atomic ordering in the liquid may have a significant influence on the subsequent heterogeneous nucleation process.

Imaging trypsin activity through changes in the orientation of liquid crystals coupled to the interactions between a polyelectrolyte and a phospholipid layer.

PubMed

Hu, Qiong-Zheng; Jang, Chang-Hyun

2012-03-01

In this study, we developed a new type of liquid crystal (LC)-based sensor for the real-time and label-free monitoring of enzymatic activity through changes in the orientation of LCs coupled to the interactions between polyelectrolyte and phospholipid. The LCs changed from dark to bright after an aqueous solution of poly-l-lysine (PLL) was transferred onto a self-assembled monolayer of the phospholipid, dioleoyl-sn-glycero-3-phospho-rac-(1-glycerol) sodium salt (DOPG), at the aqueous/LC interface. Interactions between the positively charged PLL and the negatively charged DOPG drove the reorganization of the phospholipid membrane, which induced an orientational transition in the LCs from a homeotropic to planar state. Since the serine endopeptidase trypsin can enzymatically catalyze the hydrolysis of PLL, the dark-to-bright shift in the optical response was not observed after transferring a mixed solution of PLL and trypsin onto the DOPG-decorated LC interface, indicating that no orientational transitions in the LCs occurred. However, the optical response from dark to bright was observed when the mixture in the optical cell was replaced by an aqueous solution of PLL. Control experiments with trypsin or an aqueous mixture of PLL and deactivated trypsin further confirmed the feasibility of this approach. The detection limit of trypsin was determined to be ~1 μg/mL. This approach holds great promise for use in the development of LC-based sensors for the detection of enzymatic reactions in cases where the biological polyelectrolyte substrates of enzymes could disrupt the organization of the membrane and induce orientational transitions of LCs at the aqueous/LC interface. © 2012 American Chemical Society

4D synchrotron X-ray imaging to understand porosity development in shales during exposure to hydraulic fracturing fluid

NASA Astrophysics Data System (ADS)

Kiss, A. M.; Bargar, J.; Kohli, A. H.; Harrison, A. L.; Jew, A. D.; Lim, J. H.; Liu, Y.; Maher, K.; Zoback, M. D.; Brown, G. E.

2016-12-01

Unconventional (shale) reservoirs have emerged as the most important source of petroleum resources in the United States and represent a two-fold decrease in greenhouse gas emissions compared to coal. Despite recent progress, hydraulic fracturing operations present substantial technical, economic, and environmental challenges, including inefficient recovery, wastewater production and disposal, contaminant and greenhouse gas pollution, and induced seismicity. A relatively unexplored facet of hydraulic fracturing operations is the fluid-rock interface, where hydraulic fracturing fluid (HFF) contacts shale along faults and fractures. Widely used, water-based fracturing fluids contain oxidants and acid, which react strongly with shale minerals. Consequently, fluid injection and soaking induces a host of fluid-rock interactions, most notably the dissolution of carbonates and sulfides, producing enhanced or "secondary" porosity networks, as well as mineral precipitation. The competition between these mechanisms determines how HFF affects reactive surface area and permeability of the shale matrix. The resultant microstructural and chemical changes may also create capillary barriers that can trap hydrocarbons and water. A mechanistic understanding of the microstructure and chemistry of the shale-HFF interface is needed to design new methodologies and fracturing fluids. Shales were imaged using synchrotron micro-X-ray computed tomography before, during, and after exposure to HFF to characterize changes to the initial 3D structure. CT reconstructions reveal how the secondary porosity networks advance into the shale matrix. Shale samples span a range of lithologies from siliceous to calcareous to organic-rich. By testing shales of different lithologies, we have obtained insights into the mineralogic controls on secondary pore network development and the morphologies at the shale-HFF interface and the ultimate composition of produced water from different facies. These results show that mineral texture is a major control over secondary porosity network morphology.

A Theoretical Study of Cold Air Damming.

NASA Astrophysics Data System (ADS)

Xu, Qin

1990-12-01

The dynamics of cold air damming are examined analytically with a two-layer steady state model. The upper layer is a warm and saturated cross-mountain (easterly or southeasterly onshore) flow. The lower layer is a cold mountain-parallel (northerly) jet trapped on the windward (eastern) side of the mountain. The interface between the two layers represents a coastal front-a sloping inversion layer coupling the trapped cold dome with the warm onshore flow above through pressure continuity.An analytical expression is obtained for the inviscid upper-layer flow with hydrostatic and moist adiabatic approximations. Blackadar's PBL parameterization of eddy viscosity is used in the lower-layer equations. Solutions for the mountain-parallel jet and its associated secondary transverse circulation are obtained by expanding asymptotically upon a small parameter proportional to the square root of the inertial aspect ratio-the ratio between the mountain height and the radius of inertial oscillation. The geometric shape of the sloping interface is solved numerically from a differential-integral equation derived from the pressure continuity condition imposed at the interface.The observed flow structures and force balances of cold air damming events are produced qualitatively by the model. In the cold dome the mountain-parallel jet is controlled by the competition between the mountain-parallel pressure gradient and friction: the jet is stronger with smoother surfaces, higher mountains, and faster mountain-normal geostrophic winds. In the mountain-normal direction the vertically averaged force balance in the cold dome is nearly geostrophic and controls the geometric shape of the cold dome. The basic mountain-normal pressure gradient generated in the cold dome by the negative buoyancy distribution tends to flatten the sloping interface and expand the cold dome upstream against the mountain-normal pressure gradient (produced by the upper-layer onshore wind) and Coriolis force (induced by the lower-layer mountain-parallel jet). It is found that the interface slope increases and the cold dome shrinks as the Froude number and/or upstream mountain-parallel geostrophic wind increase, or as the Rossby number, upper-layer depth, and/or surface roughness length decrease, and vice versa. The cold dome will either vanish or not be in a steady state if the Froude number is large enough or the roughness length gets too small. The theoretical findings are explained physically based on detailed analyses of the force balance along the inversion interface.

Surface charge-induced EDL interaction on the contact angle of surface nanobubbles.

PubMed

Jing, Dalei; Li, Dayong; Pan, Yunlu; Bhushan, Bharat

2016-11-01

The contact angle (CA) of surface nanobubbles is believed to affect the stability of nanobubbles and fluid drag in micro/nanofluidic systems. The CA of nanobubbles is dependent on size and is believed to be affected by the surface charge-induced electrical double layer (EDL). However, neither of these of attributes are well understood. In this paper, by introducing an EDL-induced electrostatic wetting tension, a theoretical model is first established to study the effect of EDLs formed near the solid-liquid interface and the liquid-nanobubble interface on the gas phase CA of nanobubbles. The size-dependence of this EDL interaction is studied as well. Next, by using atomic force microscopy (AFM), the effect of the EDL on nanobubbles' gas phase CA is studied with variable electrical potential at the solid-liquid interface, which is adjusted by an applied voltage. Both the theoretical and the experimental results show that the EDLs formed near the solid-liquid interface and the liquid-nanobubble interface lead to a reduction of gas phase CA of the surface nanobubbles because of an electrostatic wetting tension on the nanobubble due to the attractive electrostatic interaction between the liquid and nanobubble within the EDL, which is in the nanobubbles' outward direction. An EDL with a larger zeta potential magnitude leads to a larger gas phase CA reduction. Furthermore, the effect of EDL on the nanobubbles' gas phase CA shows a significant size-dependence considering the size dependence of the electrostatic wetting tension. The gas phase CA reduction due to the EDL decreases with increasing nanobubble height and increases with the nanobubble's increasing curvature radius, indicating that a surface charge-induced EDL could possibly explain the size dependence of the gas phase CA of nanobubbles.

Overlayer growth and electronic properties of the Bi/GaSb(110) interface

NASA Astrophysics Data System (ADS)

Gavioli, Luca; Betti, Maria Grazia; Casarini, Paolo; Mariani, Carlo

1995-06-01

The overlayer growth and electronic properties of the Bi/GaSb(110) interface and of the two-dimensional ordered (1×1)- and (1×2)-Bi layers have been investigated by complementary spectroscopic techniques (high-resolution electron-energy-loss, photoemission, and Auger spectroscopy). Bismuth forms an epitaxial monolayer, followed by island formation (Stranski-Krastanov growth mode) covering an average surface area of 40% at a nominal coverage of 4 ML. The (1×2)-symmetry stable structural phase, obtained after annealing at ~220 °C, corresponds to an average nominal Bi coverage of about 0.7 ML, suggesting an atomic geometry different from the epitaxial-continued layer structure. The disposal of Bi atoms in the (1×2) structure should build up an ``open'' layer, as the Ga-related surface exciton quenched in the (1×1) epitaxial monolayer is present in the (1×2) stable phase. The two symmetry phases are characterized by strong absorption features at 1 eV [(1×1)-Bi] and 0.54 eV [(1×2)-Bi], related to interband electronic transitions between Bi-induced electronic states. The major Bi-related occupied electronic levels, present in the valence band of the (1×1)- and (1×2)-Bi layer, have been detected by angle-integrated ultraviolet photoemission spectroscopy. Both the (1×1) and (1×2) phases show a metallic nature, with a low density of electronic states at the Fermi level. Schottky barrier heights of 0.20 and 0.14 eV are estimated for the epitaxial (1×1)- and (1×2)-symmetry stage, respectively, by analyzing the space-charge layer conditions through the study of the dopant-induced free-carrier plasmon in the GaSb substrate.

Polychromatic SSVEP stimuli with subtle flickering adapted to brain-display interactions

NASA Astrophysics Data System (ADS)

Chien, Yu-Yi; Lin, Fang-Cheng; Zao, John K.; Chou, Ching-Chi; Huang, Yi-Pai; Kuo, Heng-Yuan; Wang, Yijun; Jung, Tzyy-Ping; Shieh, Han-Ping D.

2017-02-01

Objective. Interactive displays armed with natural user interfaces (NUIs) will likely lead the next breakthrough in consumer electronics, and brain-computer interfaces (BCIs) are often regarded as the ultimate NUI-enabling machines to respond to human emotions and mental states. Steady-state visual evoked potentials (SSVEPs) are a commonly used BCI modality due to the ease of detection and high information transfer rates. However, the presence of flickering stimuli may cause user discomfort and can even induce migraines and seizures. With the aim of designing visual stimuli that can be embedded into video images, this study developed a novel approach to induce detectable SSVEPs using a composition of red/green/blue flickering lights. Approach. Based on the opponent theory of colour vision, this study used 32 Hz/40 Hz rectangular red-green or red-blue LED light pulses with a 50% duty cycle, balanced/equal luminance and 0°/180° phase shifts as the stimulating light sources and tested their efficacy in producing SSVEP responses with high signal-to-noise ratios (SNRs) while reducing the perceived flickering sensation. Main results. The empirical results from ten healthy subjects showed that dual-colour lights flickering at 32 Hz/40 Hz with a 50% duty cycle and 180° phase shift achieved a greater than 90% detection accuracy with little or no flickering sensation. Significance. As a first step in developing an embedded SSVEP stimulus in commercial displays, this study provides a foundation for developing a combination of three primary colour flickering backlights with adjustable luminance proportions to create a subtle flickering polychromatic light that can elicit SSVEPs at the basic flickering frequency.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Effects of the conjugation of whey proteins with gellan polysaccharides on surfactant-induced competitive displacement from the air-water interface.

PubMed

Cai, B; Ikeda, S

2016-08-01

Whey proteins can be used to stabilize foams and emulsions against coalescence because of their ability to form viscoelastic films at the interface that resist film rupture on collision between colloidal particles. However, whey proteins are competitively displaced from the interface if small-molecule surfactants are added, leading to destabilization of the entire system. This is because surfactants are more effective in molecular packing at the interface, and they lower interfacial tension to a greater degree than whey proteins do, but their interfacial films are poor in viscoelasticity. We hypothesized that whey proteins would become more resistant to surfactant-induced competitive displacement if they were conjugated with network-forming polysaccharides. The protein moiety of the conjugate would be expected to enable its adsorption to the interface, and the polysaccharide moiety would be expected to form self-assembled networks, strengthening the interfacial film as a whole. In this study, whey proteins were conjugated with gellan polysaccharides using the Maillard reaction. Atomic force microscopy images of interfacial films formed by the whey protein-gellan conjugate at the air-water interface and transferred onto mica sheets using the Langmuir-Blodgett method revealed that gellan did form self-assembled networks at the interface and that interfacial films also contained a large number of unconjugated whey protein molecules. Following the addition of a small-molecule surfactant (Tween 20) to the sub-phase, surface pressure increased, indicating spontaneous adsorption of surfactants to the interface. Atomic force microscopy images showed decreases in interfacial area coverage by whey proteins as surface pressure increased. At a given surface pressure, the interfacial area coverage by whey protein-gellan conjugates was greater than coverage by unconjugated whey proteins, confirming that whey proteins became more resistant to surfactant-induced displacement after conjugation with gellan. Furthermore, gellan molecules added to the sub-phase after the formation of a monolayer of whey proteins at the air-water interface did not adsorb to the interfacial protein film. These results provide a molecular basis for designing interfacial structures to enhance the stability of colloidal systems. Copyright © 2016 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.

Optical Interface States Protected by Synthetic Weyl Points

NASA Astrophysics Data System (ADS)

Wang, Qiang; Xiao, Meng; Liu, Hui; Zhu, Shining; Chan, C. T.

2017-07-01

Weyl fermions have not been found in nature as elementary particles, but they emerge as nodal points in the band structure of electronic and classical wave crystals. Novel phenomena such as Fermi arcs and chiral anomaly have fueled the interest in these topological points which are frequently perceived as monopoles in momentum space. Here, we report the experimental observation of generalized optical Weyl points inside the parameter space of a photonic crystal with a specially designed four-layer unit cell. The reflection at the surface of a truncated photonic crystal exhibits phase vortexes due to the synthetic Weyl points, which in turn guarantees the existence of interface states between photonic crystals and any reflecting substrates. The reflection phase vortexes have been confirmed for the first time in our experiments, which serve as an experimental signature of the generalized Weyl points. The existence of these interface states is protected by the topological properties of the Weyl points, and the trajectories of these states in the parameter space resembles those of Weyl semimetal "Fermi arc surface states" in momentum space. Tracing the origin of interface states to the topological character of the parameter space paves the way for a rational design of strongly localized states with enhanced local field.

Shock-induced collapse of a bubble inside a deformable vessel

PubMed Central

Coralic, Vedran; Colonius, Tim

2013-01-01

Shockwave lithotripsy repeatedly focuses shockwaves on kidney stones to induce their fracture, partially through cavitation erosion. A typical side effect of the procedure is hemorrhage, which is potentially the result of the growth and collapse of bubbles inside blood vessels. To identify the mechanisms by which shock-induced collapse could lead to the onset of injury, we study an idealized problem involving a preexisting bubble in a deformable vessel. We utilize a high-order accurate, shock- and interface-capturing, finite-volume scheme and simulate the three-dimensional shock-induced collapse of an air bubble immersed in a cylindrical water column which is embedded in a gelatin/water mixture. The mixture is a soft tissue simulant, 10% gelatin by weight, and is modeled by the stiffened gas equation of state. The bubble dynamics of this model configuration are characterized by the collapse of the bubble and its subsequent jetting in the direction of the propagation of the shockwave. The vessel wall, which is defined by the material interface between the water and gelatin/water mixture, is invaginated by the collapse and distended by the impact of the jet. The present results show that the highest measured pressures and deformations occur when the volumetric confinement of the bubble is strongest, the bubble is nearest the vessel wall and/or the angle of incidence of the shockwave reduces the distance between the jet tip and the nearest vessel surface. For a particular case considered, the 40 MPa shockwave utilized in this study to collapse the bubble generated a vessel wall pressure of almost 450 MPa and produced both an invagination and distention of nearly 50% of the initial vessel radius on a 𝒪(10) ns timescale. These results are indicative of the significant potential of shock-induced collapse to contribute to the injury of blood vessels in shockwave lithotripsy. PMID:24015027

Spatially Resolved One-Dimensional Boundary States in Graphene-Hexagonal Boron Nitride Planar Heterostructures

DOE PAGES

Li, An-Ping; Park, Jewook; Lee, Jaekwang; ...

2014-01-01

Two-dimensional (2D) interfaces between crystalline materials have been shown to generate unusual interfacial electronic states in complex oxides1-4. Recently, a onedimensional (1D) polar-on-nonpolar interface has been realized in hexagonal boron nitride (hBN) and graphene heterostructures 5-10, where a coherent 1D boundary is expected to possess peculiar electronic states dictated by edge states of graphene and the polarity of hBN 11-13. Here we present a combined scanning tunneling microscopy (STM) and firstprinciples theory study of the graphene-hBN boundary to provide a rare glimpse into the spatial and energetic distributions of the 1D boundary states in real-space. The interfaces studied here aremore » crystallographically coherent with sharp transitions from graphene zigzag edges to B (or N) terminated hBN atomic layers on a Cu foil substrate5. The revealed boundary states are about 0.6 eV below or above the Fermi energy depending on the termination of the hBN at the boundary, and are extended along but localized at the boundary with a lateral thickness of 2-3nm. These results suggest that unconventional physical effects similar to those observed at 2D interfaces can also exist in lower dimensions, opening a route for tuning of electronic properties at interfaces in 2D heterostructures.« less

Evaluation of Interfacial Forces and Bubble-Induced Turbulence Using Direct Numerical Simulation

NASA Astrophysics Data System (ADS)

Feng, Jinyong

High fidelity prediction of multiphase flows is important in a wide range of engineering applications. While some multiphase flow scenarios can be successfully modeled, many questions remain unanswered regarding the interaction between the bubbles and the turbulence, and present significant challenges in the development of closure laws for the multiphase computational fluid dynamics (M-CFD) models. To address these challenges, we propose to evaluate the interfacial forces and bubble-induced turbulence in both laminar and turbulent flow field with direct numerical simulation (DNS) approach. Advanced finite-element based flow solver (PHASTA) with level-set interface tracking method is utilized for these studies. The proportional-integral-derivative (PID) controller is adopted to ensure the statistically steady state bubble position and perform the detailed study of the turbulent field around the bubble. Selected numerical capabilities and post-processing codes are developed to achieve the research goals. The interface tracking approach is verified and validated by comparing the interfacial forces with the experiment-based data and correlations. The sign change of transverse lift force is observed as the bubble becomes more deformable. A new correlation is proposed to predict the behavior of the drag coefficient over the wide range of conditions. The wall effect on the interfacial forces are also investigated. In homogeneous turbulent flow, the effect of bubble deformability, turbulent intensity and relative velocity on the bubble-induced turbulence are analyzed. The presented method and novel results will complement the experimental database, provide insight to the bubbleinduced turbulence mechanism and help the development of M-CFD closure models.

Two-phase charge-coupled device

NASA Technical Reports Server (NTRS)

Kosonocky, W. F.; Carnes, J. E.

1973-01-01

A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.

Asymmetric Andreev resonant state with a magnetic exchange field in spin-triplet superconducting monolayer MoS2

NASA Astrophysics Data System (ADS)

Goudarzi, H.; Khezerlou, M.; Ebadzadeh, S. F.

2018-03-01

We study the influence of magnetic exchange field (MEF) on the chirality of Andreev resonant state (ARS) appearing at the relating monolayer MoS2 ferromagnet/superconductor interface, in which the induced pairing order parameter is chiral p-wave symmetry. Transmission of low-energy Dirac-like electron (hole) quasiparticles through a ferromagnet/superconductor (F/S) interface is considered based on Dirac-Bogoliubov-de Gennes Hamiltonian and, of course, Andreev reflection process. The magnetic exchange field of a ferromagnetic section on top of ML-MDS may affect the electron (hole) excitations for spin-up and spin-down electrons, differently. We find the chirality symmetry of ARS to be conserved in the absence of MEF, whereas it is broken in the presence of MEF. Tuning the MEF enables one to control either electrical properties (such as band gap, SOC and etc.) or spin-polarized transport. The resulting normal conductance is found to be more sensitive to the magnitude of MEF and doping regime of F region. Unconventional spin-triplet p-wave symmetry features the zero-bias conductance, which strongly depends on p-doping level of F region in the relating NFS junction. A sharp conductance switching in zero is achieved in the absence of SOC.

Inner Core Rotation from Geomagnetic Westward Drift and a Stationary Spherical Vortex in Earth's Core

NASA Technical Reports Server (NTRS)

Voorhies, Coerte V.

1998-01-01

The idea that geomagnetic westward drift indicates convective leveling of the planetary momentum gradient within Earth's core is pursued in search of a differentially rotating mean state, upon which various oscillations and secular effects might be superimposed. The desired state conforms to roughly spherical boundary conditions, minimizes dissipative interference with convective cooling in the bulk of the core, yet may aid core cooling by depositing heat in the uppermost core and lower mantle. The variational calculus of stationary dissipation applied to a spherical vortex within the core yields an interesting differential rotation profile, akin to spherical Couette flow bounded by thin Hartmann layers. Four boundary conditions are required. To concentrate shear induced dissipation near the core-mantle boundary, these are taken to be: (i) no-slip at the core-mantle interface; (ii) geomagnetically estimated bulk westward flow at the base of the core-mantle boundary layer; (iii) no-slip at the inner-outer core interface; and, to describe magnetic locking of the inner core to the deep outer core; (iv) hydrodynamically stress-free at the inner-outer core boundary. By boldly assuming the axial core angular momentum anomaly to be zero, the super-rotation of the inner core relative to the mantle is calculated to be at most 1.5 deg./yr.

Inner Core Rotation from Geomagnetic Westward Drift and a Stationary Spherical Vortex in Earth's Core

NASA Technical Reports Server (NTRS)

Voorhies, C. V.

1999-01-01

The idea that geomagnetic westward drift indicates convective leveling of the planetary momentum gradient within Earth's core is pursued in search of a differentially rotating mean state, upon which various oscillations and secular effects might be superimposed. The desired state conforms to roughly spherical boundary conditions, minimizes dissipative interference with convective cooling in the bulk of the core, yet may aide core cooling by depositing heat in the uppermost core and lower mantle. The variational calculus of stationary dissipation applied to a spherical vortex within the core yields an interesting differential rotation profile akin to spherical Couette flow bounded by thin Hartmann layers. Four boundary conditions are required. To concentrate shear induced dissipation near the core-mantle boundary, these are taken to be: (i) no-slip at the core-mantle interface; (ii) geomagnetically estimated bulk westward flow at the base of the core-mantle boundary layer; (iii) no-slip at the inner-outer core interface; and, to describe magnetic locking of the inner core to the deep outer core, (iv) hydrodynamically stress-free at the inner-outer core boundary. By boldly assuming the axial core angular momentum anomaly to be zero, the super-rotation of the inner core is calculated to be at most 1.5 degrees per year.

Crystal structures of the GCaMP calcium sensor reveal the mechanism of fluorescence signal change and aid rational design.

PubMed

Akerboom, Jasper; Rivera, Jonathan D Vélez; Guilbe, María M Rodríguez; Malavé, Elisa C Alfaro; Hernandez, Hector H; Tian, Lin; Hires, S Andrew; Marvin, Jonathan S; Looger, Loren L; Schreiter, Eric R

2009-03-06

The genetically encoded calcium indicator GCaMP2 shows promise for neural network activity imaging, but is currently limited by low signal-to-noise ratio. We describe x-ray crystal structures as well as solution biophysical and spectroscopic characterization of GCaMP2 in the calcium-free dark state, and in two calcium-bound bright states: a monomeric form that dominates at intracellular concentrations observed during imaging experiments and an unexpected domain-swapped dimer with decreased fluorescence. This series of structures provides insight into the mechanism of Ca2+-induced fluorescence change. Upon calcium binding, the calmodulin (CaM) domain wraps around the M13 peptide, creating a new domain interface between CaM and the circularly permuted enhanced green fluorescent protein domain. Residues from CaM alter the chemical environment of the circularly permuted enhanced green fluorescent protein chromophore and, together with flexible inter-domain linkers, block solvent access to the chromophore. Guided by the crystal structures, we engineered a series of GCaMP2 point mutants to probe the mechanism of GCaMP2 function and characterized one mutant with significantly improved signal-to-noise. The mutation is located at a domain interface and its effect on sensor function could not have been predicted in the absence of structural data.

The work-family interface in the United States and Singapore: conflict across cultures.

PubMed

Galovan, Adam M; Fackrell, Tamara; Buswell, Lydia; Jones, Blake L; Hill, E Jeffrey; Carroll, Sarah June

2010-10-01

This article examines the work-family interface in a cross-cultural comparison between two nationally representative samples from the United States (n = 1,860) and Singapore (n = 1,035) with emphasis on work-family conflict. Family-to-work conflict was negatively related to marital satisfaction in both Singapore and the United States, although the effect was stronger in the United States. Similarly, family-to-work conflict was positively related to job satisfaction in the United States but was negatively related in Singapore. As expected, schedule flexibility was negatively related to depression in the United States, but in Singapore the relationship was positive. These findings suggest that theoretical relationships in the work-family interface developed in the more culturally individualistic West may need to be adapted when studying populations in the more collectivist East.

The autoinhibitory CARD2-Hel2i Interface of RIG-I governs RNA selection.

PubMed

Ramanathan, Anand; Devarkar, Swapnil C; Jiang, Fuguo; Miller, Matthew T; Khan, Abdul G; Marcotrigiano, Joseph; Patel, Smita S

2016-01-29

RIG-I (Retinoic Acid Inducible Gene-I) is a cytosolic innate immune receptor that detects atypical features in viral RNAs as foreign to initiate a Type I interferon signaling response. RIG-I is present in an autoinhibited state in the cytoplasm and activated by blunt-ended double-stranded (ds)RNAs carrying a 5' triphosphate (ppp) moiety. These features found in many pathogenic RNAs are absent in cellular RNAs due to post-transcriptional modifications of RNA ends. Although RIG-I is structurally well characterized, the mechanistic basis for RIG-I's remarkable ability to discriminate between cellular and pathogenic RNAs is not completely understood. We show that RIG-I's selectivity for blunt-ended 5'-ppp dsRNAs is ≈3000 times higher than non-blunt ended dsRNAs commonly found in cellular RNAs. Discrimination occurs at multiple stages and signaling RNAs have high affinity and ATPase turnover rate and thus a high katpase/Kd. We show that RIG-I uses its autoinhibitory CARD2-Hel2i (second CARD-helicase insertion domain) interface as a barrier to select against non-blunt ended dsRNAs. Accordingly, deletion of CARDs or point mutations in the CARD2-Hel2i interface decreases the selectivity from ≈3000 to 150 and 750, respectively. We propose that the CARD2-Hel2i interface is a 'gate' that prevents cellular RNAs from generating productive complexes that can signal. © The Author(s) 2015. Published by Oxford University Press on behalf of Nucleic Acids Research.

Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface.

PubMed

Nan, Tianxiang; Zhou, Ziyao; Liu, Ming; Yang, Xi; Gao, Yuan; Assaf, Badih A; Lin, Hwaider; Velu, Siddharth; Wang, Xinjun; Luo, Haosu; Chen, Jimmy; Akhtar, Saad; Hu, Edward; Rajiv, Rohit; Krishnan, Kavin; Sreedhar, Shalini; Heiman, Don; Howe, Brandon M; Brown, Gail J; Sun, Nian X

2014-01-14

Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

Adhesion of voids to bimetal interfaces with non-uniform energies

DOE PAGES

Zheng, Shijian; Shao, Shuai; Zhang, Jian; ...

2015-10-21

Interface engineering has become an important strategy for designing radiation-resistant materials. Critical to its success is fundamental understanding of the interactions between interfaces and radiation-induced defects, such as voids. Using transmission electron microscopy, here we report an interesting phenomenon in their interaction, wherein voids adhere to only one side of the bimetal interfaces rather than overlapping them. We show that this asymmetrical void-interface interaction is a consequence of differing surface energies of the two metals and non-uniformity in their interface formation energy. Specifically, voids grow within the phase of lower surface energy and wet only the high-interface energy regions. Furthermore,more » because this outcome cannot be accounted for by wetting of interfaces with uniform internal energy, our report provides experimental evidence that bimetal interfaces contain non-uniform internal energy distributions. Ultimately, this work also indicates that to design irradiation-resistant materials, we can avoid void-interface overlap via tuning the configurations of interfaces.« less

An insight into intrinsic interfacial properties between Li metals and Li10GeP2S12 solid electrolytes.

PubMed

Chen, Bingbing; Ju, Jiangwei; Ma, Jun; Zhang, Jianjun; Xiao, Ruijuan; Cui, Guanglei; Chen, Liquan

2017-11-29

Density functional theory simulations and experimental studies were performed to investigate the interfacial properties, including lithium ion migration kinetics, between lithium metal anode and solid electrolyte Li 10 GeP 2 S 12 (LGPS). The LGPS[001] plane was chosen as the studied surface because the easiest Li + migration pathway is along this direction. The electronic structure of the surface states indicated that the electrochemical stability was reduced at both the PS 4 - and GeS 4 -teminated surfaces. For the interface cases, the equilibrium interfacial structures of lithium metal against the PS 4 -terminated LGPS[001] surface (Li/PS 4 -LGPS) and the GeS 4 -terminated LGPS[001] surface (Li/GeS 4 -LGPS) were revealed based on the structural relaxation and adhesion energy analysis. Solid electrolyte interphases were expected to be formed at both Li/PS 4 -LGPS and Li/GeS 4 -LGPS interfaces, resulting in an unstable state of interface and large interfacial resistance, which was verified by the EIS results of the Li/LGPS/Li cell. In addition, the simulations of the migration kinetics show that the energy barriers for Li + crossing the Li/GeS 4 -LGPS interface were relatively low compared with the Li/PS 4 -LGPS interface. This may contribute to the formation of Ge-rich phases at the Li/LGPS interface, which can tune the interfacial structures to improve the ionic conductivity for future all-solid-state batteries. This work will offer a thorough understanding of the Li/LGPS interface, including local structures, electronic states and Li + diffusion behaviors in all-solid-state batteries.

Fabrication and Properties of Multilayer Structures

DTIC Science & Technology

1982-08-01

22- The relative voltage supported in each semiconductor is V -V NAc b 1 A227) Vb2 V2 NDlcl where V = V1 + V2. It is apparent that Eqs. 5-7 will...has more difficulty because the interface state capacitance must be extracted from the measured capacitance. When a voltage is applied, the interface...contain identical information about interface states. However, as Nicollian and Goetzberger (6 ) have shown, greater inaccuracies arise in extracting

Unraveling shock-induced chemistry using ultrafast lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, David Steven

The exquisite time synchronicity between shock and diagnostics needed to unravel chemical events occurring in picoseconds has been achieved using a shaped ultrafast laser pulse to both drive the shocks and interrogate the sample via a multiplicity of optical diagnostics. The shaped laser drive pulse can produce well-controlled shock states of sub-ns duration with sub-10 ps risetimes, sufficient for investigation offast reactions or phase transformations in a thin layer with picosecond time resolution. The shock state is characterized using ultrafast dynamic ellipsometry (UDE) in either planar or Gaussian spatial geometries, the latter allowing measurements of the equation of state ofmore » materials at a range of stresses in a single laser pulse. Time-resolved processes in materials are being interrogated using UDE, ultrafast infrared absorption, ultrafast UV/visible absorption, and femtosecond stimulated Raman spectroscopy. Using these tools we showed that chemistry in an energetic thin film starts only after an induction time of a few tens of ps, an observation that allows differentiation between proposed shock-induced reaction mechanisms. These tools are presently being applied to a variety of energetic and reactive sample systems, from nitromethane and carbon disulfide, to microengineered interfaces in tunable energetic mixtures. Recent results will be presented, and future trends outlined.« less

Sulfidation behavior of ZnFe2O4 roasted with pyrite: Sulfur inducing and sulfur-oxygen interface exchange mechanism

NASA Astrophysics Data System (ADS)

Min, Xiaobo; Zhou, Bosheng; Ke, Yong; Chai, Liyuan; Xue, Ke; Zhang, Chun; Zhao, Zongwen; Shen, Chen

2016-05-01

The sulfidation roasting behavior was analyzed in detail to reveal the reaction mechanism. Information about the sulfidation reaction, including phase transformation, ionic migration behavior and morphological change, were obtained by XRD, 57Fe Mossbauer spectroscopy, XPS and SEM analysis. The results showed that the sulfidation of zinc ferrite is a process of sulfur inducing and sulfur-oxygen interface exchange. This process can be divided into six stages: decomposition of FeS2, formation of the oxygen-deficient environment, migration of O2- induced by S2(g), formation of ZnFe2O4-δ, migration of Fe2+ accompanied by the precipitation of ZnO, and the sulfur-oxygen interface exchange reaction. The sulfidation products were zinc blende, wurtzite, magnetite and a fraction of zinc-bearing magnetite. These findings can provide theoretical support for controlling the process during which the recovery of Zn and Fe is achieved through the combined flotation-magnetic separation process.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

NASA Astrophysics Data System (ADS)

Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.

2017-09-01

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces.

PubMed

Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M D

2017-09-01

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

PubMed Central

Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.

2017-01-01

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism. PMID:29333523

Study of fracture and stress-induced morphological instabilities in polymeric materials

NASA Astrophysics Data System (ADS)

Sabouri-Ghomi, Mohsen

We study the phenomena of fracture in polymers at the molecular and continuum level. At a molecular level, we study the failure of polymer/polymer interfaces. Our main focus is on a specific mode of failure known as chain pull-out fracture, which is common to weak adhesive junctions, and polymer blends and mixtures. In the case of the interface between incompatible polymers, reinforcement is achieved by adding a block copolymer to the interface. We introduce a microscopic model based on Brownian dynamics to investigate the effect of the polymerization index N, of the block connector chain, on fracture toughness of such reinforced polymeric junctions. We consider the mushroom regime, where connector chains are grafted with low surface density, for the case of large pulling velocity. We find that for short chains the interface fracture toughness depends linearly on the polymerization index N of the connector chains, while for longer chains the dependence becomes N 3/2. We propose a scaling argument, based on the geometry of the initial configuration, that accounts for both short and long chains and the crossover between them. At the continuum level, we study the pattern selection mechanism of finger-like crack growth phenomena in gradient driven growth problems in general, and the structure of stress-induced morphological instabilities in crazing of polymer glasses in particular. We simulate solidification in a narrow channel through the use of a phase-field model with an adaptive grid. By tuning a dimensionless parameter, the Peclet number, we show a continuous crossover from a free dendrite at high Peclet numbers to anisotropic viscous fingering at low Peclet numbers. At low Peclet numbers we find good agreement between our results, theoretical predictions, and experiment, providing the first quantitative test of solvability theory for anisotropic viscous fingers. For high undercoolings, we find new phenomena, a solid forger which satisfies stability and thermodynamic criterion. We further provide an analytical form for the shape of these fingers, based on local models of solidification, which fits our numerical results from simulation. Later we study the growth of crazes in polymer glasses by deriving the equations of motion of plastic flow at the craze tip, and the steady-state velocity profile of this flow. By developing a phenomenological model, we solve the full time-dependent equations of motion of this highly non-linear phenomena. Our simulation produces the steady-state cellular pattern observed in experiments. We further show that polymer glasses with lower yield stress produce cellular patterns with sharper tips and more cells, indicating instabilities with smaller wavelengths.

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

NASA Astrophysics Data System (ADS)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Dual-Layered Film Protected Lithium Metal Anode to Enable Dendrite-Free Lithium Deposition.

PubMed

Yan, Chong; Cheng, Xin-Bing; Tian, Yang; Chen, Xiang; Zhang, Xue-Qiang; Li, Wen-Jun; Huang, Jia-Qi; Zhang, Qiang

2018-06-01

Lithium metal batteries (such as lithium-sulfur, lithium-air, solid state batteries with lithium metal anode) are highly considered as promising candidates for next-generation energy storage systems. However, the unstable interfaces between lithium anode and electrolyte definitely induce the undesired and uncontrollable growth of lithium dendrites, which results in the short-circuit and thermal runaway of the rechargeable batteries. Herein, a dual-layered film is built on a Li metal anode by the immersion of lithium plates into the fluoroethylene carbonate solvent. The ionic conductive film exhibits a compact dual-layered feature with organic components (ROCO 2 Li and ROLi) on the top and abundant inorganic components (Li 2 CO 3 and LiF) in the bottom. The dual-layered interface can protect the Li metal anode from the corrosion of electrolytes and regulate the uniform deposition of Li to achieve a dendrite-free Li metal anode. This work demonstrates the concept of rational construction of dual-layered structured interfaces for safe rechargeable batteries through facile surface modification of Li metal anodes. This not only is critically helpful to comprehensively understand the functional mechanism of fluoroethylene carbonate but also affords a facile and efficient method to protect Li metal anodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

DOE PAGES

Zhang, Lipeng; Xu, Haixuan; Kent, Paul R. C.; ...

2016-05-06

The emergence of two-dimensional metallic states at the LaAlO 3/SrTiO 3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO over layers. This insulator-to-metal transition can be explained through the polar catastrophe mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effective in reducing or eliminating this critical thickness. Employing a modified polar catastrophe" model, we demonstrate that the nanowire heterostructure electrostatic potential diverges more rapidly as a function of layer thickness than in a regular heterostructure. Our first principles calculations indicate that formore » nanowire heterostructure geometries a one-dimensional electron gas (1DEG) can be induced, consistent with recent experimental observations of 1D conductivity in LAO/STO steps. Similar to LAO/STO 2DEGs, we predict that the 1D charge density will decay laterally within a few unit cells away from the nanowire; thus providing a mechanism for tuning the carrier behavior between 1D and 2D conductivity. Furthermore, our work provides insight into the creation and manipulation of charge density at an oxide heterostructure interface and therefore may be beneficial for future nanoelectronic devices and for the engineering of novel quantum phases.« less

Nanoscale control of an interfacial metal-insulator transition at room temperature.

PubMed

Cen, C; Thiel, S; Hammerl, G; Schneider, C W; Andersen, K E; Hellberg, C S; Mannhart, J; Levy, J

2008-04-01

Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.

Insights into collaborative separation process of photogenerated charges and superior performance of solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiangyang, E-mail: lxy081276@126.com; Wang, Shun; Zheng, Haiwu

2016-07-25

ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} (ZnO/CBS) and ZnO nanowires/CBS-graphene nanoplates (ZnO/CBS-GNs), as well as two types of solar cells were prepared. The photovoltaic responses of CBS-GNs and ZnO/CBS-GNs can be improved with incorporation of GNs. The transient surface photovoltage (TPV) can provide detailed information on the separation and transport of photogenerated carriers. The multichannel separation process from the TPVs indicates that the macro-photoelectric signals can be attributed to the photogenerated charges separated at the interface of CBS/GNs, rather than CBS/ZnO. The multi-interfacial recombination is the major carrier loss, and the hole selective p-V{sub 2}O{sub 5} can efficiently accelerate the chargemore » extraction to the external circuit. The ZnO/CBS-GNs cell exhibits the superior performance, and the highest efficiency is 10.9%. With the adequate interfaces of CBS/GNs, GNs conductive network, energy level matching, etc., the excitons can easily diffuse to the interface of CBS/GNs, and the separated electrons and holes can be collected quickly, inducing the high photoelectric properties. Here, a facile strategy for solid state solar cells with superior performance presents a potential application.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hong-Sub; Park, Hyung-Ho, E-mail: hhpark@yonsei.ac.kr

The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO{sub 3} (100) single crystal as the substrate to observe changes inmore » the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.« less

Passage of a shock wave through inhomogeneous media and its impact on gas-bubble deformation.

PubMed

Nowakowski, A F; Ballil, A; Nicolleau, F C G A

2015-08-01

The paper investigates shock-induced vortical flows within inhomogeneous media of nonuniform thermodynamic properties. Numerical simulations are performed using a Eulerian type mathematical model for compressible multicomponent flow problems. The model, which accounts for pressure nonequilibrium and applies different equations of state for individual flow components, shows excellent capabilities for the resolution of interfaces separating compressible fluids as well as for capturing the baroclinic source of vorticity generation. The developed finite volume Godunov type computational approach is equipped with an approximate Riemann solver for calculating fluxes and handles numerically diffused zones at flow component interfaces. The computations are performed for various initial conditions and are compared with available experimental data. The initial conditions promoting a shock-bubble interaction process include weak to high planar shock waves with a Mach number ranging from 1.2 to 3 and isolated cylindrical bubble inhomogeneities of helium, argon, nitrogen, krypton, and sulphur hexafluoride. The numerical results reveal the characteristic features of the evolving flow topology. The impulsively generated flow perturbations are dominated by the reflection and refraction of the shock, the compression, and acceleration as well as the vorticity generation within the medium. The study is further extended to investigate the influence of the ratio of the heat capacities on the interface deformation.

Viscosity and viscoelasticity of two-phase systems having diffuse interfaces

NASA Technical Reports Server (NTRS)

Hopper, R. W.

1976-01-01

The equilibrium stability criterion for diffuse interfaces in a two-component solution with a miscibility gap requires that the interdiffusion flux vanish. If the system is continuously deformed, convective fluxes disrupt the equilibrium in the interface regions and induce a counter diffusive flux, which is dissipative and contributes to the apparent viscosity of the mixture. Chemical free energy is recoverably stored, causing viscoelastic phenomena. Both effects are significant.

Surface and interface effects on non-radiative exciton recombination and relaxation dynamics in CdSe/Cd,Zn,S nanocrystals

NASA Astrophysics Data System (ADS)

Walsh, Brenna R.; Saari, Jonathan I.; Krause, Michael M.; Nick, Robert; Coe-Sullivan, Seth; Kambhampati, Patanjali

2016-06-01

Excitonic state-resolved pump/probe spectroscopy and time correlate single photon counting were used to study exciton dynamics from the femtosecond to nanosecond time scales in CdSe/Cd,Zn,S nanocrystals. These measurements reveal the role of the core/shell interface as well as surface on non-radiative excitonic processes over three time regimes. Time resolved photoluminescence reports on how the interface controls slow non-radiative processes that dictate emission at the single excitonic level. Heterogeneity in decay is minimized by interfacial structure. Pump/probe measurements explore the non-radiative multiexcitonic recombination processes on the picosecond timescale. These Auger based non-radiative processes dictate lifetimes of multiexcitonic states. Finally state-resolved pump/probe measurements on the femtosecond timescale reveal the influence of the interface on electron and hole relaxation dynamics. We find that the interface has a profound influence on all three types of non-radiative processes which ultimately control light emission from nanocrystals.

Different matrix evaluation for the bone regeneration of rats' femours using time domain optical coherence tomography

NASA Astrophysics Data System (ADS)

Rusu, Laura-Cristina; Negrutiu, Meda Lavinia; Sinescu, Cosmin; Hoinoiu, Bogdan; Zaharia, Cristian; Ardelean, Lavinia; Duma, Virgil-Florin; Podoleanu, Adrian G.

2014-01-01

The osteoconductive materials are important in bone regeneration procedures. Three dimensional (3D) reconstructions were obtained from the analysis. The aim of this study is to investigate the interface between the femur rat bone and the new bone that is obtained using a method of tissue engineering that is based on two artificial matrixes inserted in previously artificially induced defects. For this study, under strict supervision 20 rats were used in conformity with ethical procedures. In all the femurs a round defect was induced by drilling with a 1 mm spherical Co-Cr surgical drill. The matrixes used were IngeniOss (for ten samples) and 4Bone(for the other ten samples). These materials were inserted into the induced defects. The femurs were investigated at 1 month, after the surgical procedures. The interfaces were examined using Time Domain (TD) Optical Coherence Tomography (OCT) combined with Confocal Microscopy (CM). The scanning procedure is similar to that used in any CM, where the fast scanning is en-face (line rate) and the scanning in depth is much slower (at the frame rate). The optical configuration uses two single mode directional couplers with a superluminiscent diode as the source centered at 1300 nm. The results showed open interfaces due to the insufficient healing process, as well as closed interfaces due to a new bone formation inside the defect. The conclusion of this study is that TD-OCT can act as a valuable tool in the investigation of the interface between the old bone and the one that has been newly created due to the osteoinductive process. The TD-OCT has proven a valuable tool for the non-invasive evaluation of the matrix bone interfaces.

Structural analyses of human thymidylate synthase reveal a site that may control conformational switching between active and inactive states.

PubMed

Chen, Dan; Jansson, Anna; Sim, Daniel; Larsson, Andreas; Nordlund, Pär

2017-08-11

Thymidylate synthase (TS) is the sole enzyme responsible for de novo biosynthesis of thymidylate (TMP) and is essential for cell proliferation and survival. Inhibition of human TS (hTS) has been extensively investigated for cancer chemotherapy, but several aspects of its activity and regulation are still uncertain. In this study, we performed comprehensive structural and biophysical studies of hTS using crystallography and thermal shift assay and provided the first detailed structural information on the conformational changes induced by ligand binding to the hTS active site. We found that upon binding of the antifolate agents raltitrexed and nolatrexed, the two insert regions in hTS, the functions of which are unclear, undergo positional shifts toward the catalytic center. We investigated the inactive conformation of hTS and found that the two insert regions are also involved in the conformational transition between the active and inactive state of hTS. Moreover, we identified a ligand-binding site in the dimer interface, suggesting that the cavity in the dimer interface could serve as an allosteric site of hTS to regulate the conformational switching between the active and inactive states. On the basis of these findings, we propose a regulatory mechanism of hTS activity that involves allosteric regulation of interactions of hTS with its own mRNA depending on cellular demands for TMP. © 2017 by The American Society for Biochemistry and Molecular Biology, Inc.

Exploring the molecular basis of RNA recognition by the dimeric RNA-binding protein via molecular simulation methods.

PubMed

Chang, Shan; Zhang, Da-Wei; Xu, Lei; Wan, Hua; Hou, Ting-Jun; Kong, Ren

2016-11-01

RNA-binding protein with multiple splicing (RBPMS) is critical for axon guidance, smooth muscle plasticity, and regulation of cancer cell proliferation and migration. Recently, different states of the RNA-recognition motif (RRM) of RBPMS, one in its free form and another in complex with CAC-containing RNA, were determined by X-ray crystallography. In this article, the free RRM domain, its wild type complex and 2 mutant complex systems are studied by molecular dynamics (MD) simulations. Through comparison of free RRM domain and complex systems, it's found that the RNA binding facilitates stabilizing the RNA-binding interface of RRM domain, especially the C-terminal loop. Although both R38Q and T103A/K104A mutations reduce the binding affinity of RRM domain and RNA, the underlining mechanisms are different. Principal component analysis (PCA) and Molecular mechanics Poisson-Boltzmann surface area (MM/PBSA) methods were used to explore the dynamical and recognition mechanisms of RRM domain and RNA. R38Q mutation is positioned on the homodimerization interface and mainly induces the large fluctuations of RRM domains. This mutation does not directly act on the RNA-binding interface, but some interfacial hydrogen bonds are weakened. In contrast, T103A/K104A mutations are located on the RNA-binding interface of RRM domain. These mutations obviously break most of high occupancy hydrogen bonds in the RNA-binding interface. Meanwhile, the key interfacial residues lose their favorable energy contributions upon RNA binding. The ranking of calculated binding energies in 3 complex systems is well consistent with that of experimental binding affinities. These results will be helpful in understanding the RNA recognition mechanisms of RRM domain.

Exploring the molecular basis of RNA recognition by the dimeric RNA-binding protein via molecular simulation methods

PubMed Central

Chang, Shan; Zhang, Da-Wei; Xu, Lei; Wan, Hua; Hou, Ting-Jun; Kong, Ren

2016-01-01

ABSTRACT RNA-binding protein with multiple splicing (RBPMS) is critical for axon guidance, smooth muscle plasticity, and regulation of cancer cell proliferation and migration. Recently, different states of the RNA-recognition motif (RRM) of RBPMS, one in its free form and another in complex with CAC-containing RNA, were determined by X-ray crystallography. In this article, the free RRM domain, its wild type complex and 2 mutant complex systems are studied by molecular dynamics (MD) simulations. Through comparison of free RRM domain and complex systems, it's found that the RNA binding facilitates stabilizing the RNA-binding interface of RRM domain, especially the C-terminal loop. Although both R38Q and T103A/K104A mutations reduce the binding affinity of RRM domain and RNA, the underlining mechanisms are different. Principal component analysis (PCA) and Molecular mechanics Poisson-Boltzmann surface area (MM/PBSA) methods were used to explore the dynamical and recognition mechanisms of RRM domain and RNA. R38Q mutation is positioned on the homodimerization interface and mainly induces the large fluctuations of RRM domains. This mutation does not directly act on the RNA-binding interface, but some interfacial hydrogen bonds are weakened. In contrast, T103A/K104A mutations are located on the RNA-binding interface of RRM domain. These mutations obviously break most of high occupancy hydrogen bonds in the RNA-binding interface. Meanwhile, the key interfacial residues lose their favorable energy contributions upon RNA binding. The ranking of calculated binding energies in 3 complex systems is well consistent with that of experimental binding affinities. These results will be helpful in understanding the RNA recognition mechanisms of RRM domain. PMID:27592836

Electronic and magnetic properties of RMnO3/AMnO3 heterostructures

NASA Astrophysics Data System (ADS)

Yu, Rong; Yunoki, Seiji; Dong, Shuai; Dagotto, Elbio

2009-09-01

The ground-state properties of RMnO3/AMnO3 (RMO/AMO) heterostructures (with R=La,Pr,… , a trivalent rare-earth cation and A=Sr,Ca,… , a divalent alkaline cation) are studied using a two-orbital double-exchange model including the superexchange coupling and Jahn-Teller lattice distortions. To describe the charge transfer across the interface, the long-range Coulomb interaction is taken into account at the mean-field level, by self-consistently solving the Poisson’s equation. The calculations are carried out numerically on finite clusters. We find that the state stabilized near the interface of the heterostructure is similar to the state of the bulk compound (R,A)MO at electronic density close to 0.5. For instance, a charge and orbitally ordered CE state is found at the interface if the corresponding bulk (R,A)MO material is a narrow-to-intermediate bandwidth manganite. But instead the interface regime accommodates an A-type antiferromagnetic state with a uniform x2-y2 orbital order, if the bulk (R,A)MO corresponds to a wide bandwidth manganite. We argue that these results explain some of the properties of long-period (RMO)m/(AMO)n superlattices, such as (PrMnO3)m/(CaMnO3)n and (LaMnO3)m/(SrMnO3)n . We also remark that the intermediate states in between the actual interface and the bulklike regimes of the heterostructure are dependent on the bandwidth and the screening of the Coulomb interaction. In these regions of the heterostructures, states are found that do not have an analog in experimentally known bulk phase diagrams. These new states of the heterostructures provide a natural interpolation between magnetically ordered states that are stable in the bulk at different electronic densities.

In situ SEM thermal fatigue of Al/graphite metal matrix composites

NASA Technical Reports Server (NTRS)

Zong, G. S.; Rabenberg, L.; Marcus, H. L.

1990-01-01

Several thermal fatigue-induced failure mechanisms are deduced for unidirectional graphite-reinforced 6061 Al-alloy MMCs subjected to in situ thermal cycling. These thermal cycling conditions are representative of MMC service cycles in aerospace environments, where thermal fatigue is primarily associated with changes in the stress states near the interfaces due to coefficient of thermal expansion mismatch between fiber and matrix. This in situ SEM thermal-cycling study clarified such factors affecting MMCs' thermal fatigue as local fiber content and distribution, void volume, fiber stiffness, thermal excursion magnitude, and number of thermal cycles. MMC microfailure modes in thermal fatigue have been deduced.

Replicating the benefits of Deutschian closed timelike curves without breaking causality

NASA Astrophysics Data System (ADS)

Yuan, Xiao; Assad, Syed M.; Thompson, Jayne; Haw, Jing Yan; Vedral, Vlatko; Ralph, Timothy C.; Lam, Ping Koy; Weedbrook, Christian; Gu, Mile

2015-11-01

In general relativity, closed timelike curves can break causality with remarkable and unsettling consequences. At the classical level, they induce causal paradoxes disturbing enough to motivate conjectures that explicitly prevent their existence. At the quantum level such problems can be resolved through the Deutschian formalism, however this induces radical benefits—from cloning unknown quantum states to solving problems intractable to quantum computers. Instinctively, one expects these benefits to vanish if causality is respected. Here we show that in harnessing entanglement, we can efficiently solve NP-complete problems and clone arbitrary quantum states—even when all time-travelling systems are completely isolated from the past. Thus, the many defining benefits of Deutschian closed timelike curves can still be harnessed, even when causality is preserved. Our results unveil a subtle interplay between entanglement and general relativity, and significantly improve the potential of probing the radical effects that may exist at the interface between relativity and quantum theory.

Aquaporins-2 and -4 regulate glycogen metabolism and survival during hyposmotic-anoxic stress in Caenorhabditis elegans

PubMed Central

LaMacchia, John C.

2015-01-01

Periods of oxygen deprivation can lead to ion and water imbalances in affected tissues that manifest as swelling (edema). Although oxygen deprivation-induced edema is a major contributor to injury in clinical ischemic diseases such as heart attack and stroke, the pathophysiology of this process is incompletely understood. In the present study we investigate the impact of aquaporin-mediated water transport on survival in a Caenorhabditis elegans model of edema formation during complete oxygen deprivation (anoxia). We find that nematodes lacking aquaporin water channels in tissues that interface with the surrounding environment display decreased edema formation and improved survival rates in anoxia. We also find that these animals have significantly reduced demand for glycogen as an energetic substrate during anoxia. Together, our data suggest that reductions in membrane water permeability may be sufficient to induce a hypometabolic state during oxygen deprivation that reduces injury and extends survival limits. PMID:26017147

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Mingda; Song, Qichen; Zhao, Weiwei

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE PAGES

Li, Mingda; Song, Qichen; Zhao, Weiwei; ...

2017-11-01

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Chun-Lan; Yuan, Hongtao; Li, Yanbin

Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 10 14 cm –2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, wemore » demonstrate an all solid-state EDL device based on a solid superionic conductor LaF 3, which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF 3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS 2. Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS 2 transistors. Finally, this result shows the powerful gating capability of LaF 3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.« less

Localized melt-scan strategy for site specific control of grain size and primary dendrite arm spacing in electron beam additive manufacturing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghavan, Narendran; Simunovic, Srdjan; Dehoff, Ryan

In addition to design geometry, surface roughness, and solid-state phase transformation, solidification microstructure plays a crucial role in controlling the performance of additively manufactured components. Crystallographic texture, primary dendrite arm spacing (PDAS), and grain size are directly correlated to local solidification conditions. We have developed a new melt-scan strategy for inducing site specific, on-demand control of solidification microstructure. We were able to induce variations in grain size (30 μm–150 μm) and PDAS (4 μm - 10 μm) in Inconel 718 parts produced by the electron beam additive manufacturing system (Arcam®). A conventional raster melt-scan resulted in a grain size ofmore » about 600 μm. The observed variations in grain size with different melt-scan strategies are rationalized using a numerical thermal and solidification model which accounts for the transient curvature of the melt pool and associated thermal gradients and liquid-solid interface velocities. The refinement in grain size at high cooling rates (>104 K/s) is also attributed to the potential heterogeneous nucleation of grains ahead of the epitaxially growing solidification front. The variation in PDAS is rationalized using a coupled numerical-theoretical model as a function of local solidification conditions (thermal gradient and liquid-solid interface velocity) of the melt pool.« less